Energy Technology Data Exchange (ETDEWEB)
Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-01-15
The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. Existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2 e/4{pi}. The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.
Lectures on the Quantum Hall Effect
Tong, David
2016-01-01
The purpose of these lectures is to describe the basic theoretical structures underlying the rich and beautiful physics of the quantum Hall effect. The focus is on the interplay between microscopic wavefunctions, long-distance effective Chern-Simons theories, and the modes which live on the boundary. The notes are aimed at graduate students in any discipline where $\\hbar=1$. A working knowledge of quantum field theory is assumed. Contents: 1. The Basics (Landau levels and Berry phase). 2. The Integer Quantum Hall Effect. 3. The Fractional Quantum Hall Effect. 4. Non-Abelian Quantum Hall States. 5. Chern-Simons Theories. 6. Edge Modes.
The quantum Hall effects: Philosophical approach
Lederer, P.
2015-05-01
The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.
Quantum Hall effect in momentum space
Ozawa, Tomoki; Price, Hannah M.; Carusotto, Iacopo
2016-05-01
We theoretically discuss a momentum-space analog of the quantum Hall effect, which could be observed in topologically nontrivial lattice models subject to an external harmonic trapping potential. In our proposal, the Niu-Thouless-Wu formulation of the quantum Hall effect on a torus is realized in the toroidally shaped Brillouin zone. In this analogy, the position of the trap center in real space controls the magnetic fluxes that are inserted through the holes of the torus in momentum space. We illustrate the momentum-space quantum Hall effect with the noninteracting trapped Harper-Hofstadter model, for which we numerically demonstrate how this effect manifests itself in experimental observables. Extension to the interacting trapped Harper-Hofstadter model is also briefly considered. We finally discuss possible experimental platforms where our proposal for the momentum-space quantum Hall effect could be realized.
Quantum Hall Effect in Higher Dimensions
Karabali, Dimitra; Karabali, Dimitra
2002-01-01
Following recent work on the quantum Hall effect on $S^4$, we solve the Landau problem on the complex projective spaces ${\\bf C}P^k$ and discuss quantum Hall states for such spaces. Unlike the case of $S^4$, a finite spatial density can be obtained with a finite number of internal states for each particle. We treat the case of ${\\bf C}P^2$ in some detail considering both Abelian and nonabelian background fields. The wavefunctions are obtained and incompressibility of the Hall states is shown. The case of ${\\bf C}P^3$ is related to the case of $S^4$.
Mesoscopic effects in the quantum Hall regime
Indian Academy of Sciences (India)
R N Bhatt; Xin Wan
2002-02-01
We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In ﬁnite-size systems, we ﬁnd that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic ﬁelds.
Bound values for Hall conductivity of heterogeneous medium under quantum Hall effect conditions
Indian Academy of Sciences (India)
V E Arkhincheev
2008-02-01
Bound values for Hall conductivity under quantum Hall effect (QHE) conditions in inhomogeneous medium has been studied. It is shown that bound values for Hall conductivity differ from bound values for metallic conductivity. This is due to the unusual character of current percolation under quantum Hall effect conditions.
Integer quantum Hall effect in graphene
Energy Technology Data Exchange (ETDEWEB)
Jellal, Ahmed, E-mail: ahmed.jellal@gmail.com [Saudi Center for Theoretical Physics, Dhahran (Saudi Arabia); Theoretical Physics Group, Faculty of Sciences, Chouaïb Doukkali University, 24000 El Jadida (Morocco)
2016-04-08
We study the quantum Hall effect in a monolayer graphene by using an approach based on thermodynamical properties. This can be done by considering a system of Dirac particles in an electromagnetic field and taking into account of the edges effect as a pseudo-potential varying continuously along the x direction. At low temperature and in the weak electric field limit, we explicitly determine the thermodynamical potential. With this, we derive the particle numbers in terms of the quantized flux and therefore the Hall conductivity immediately follows.
Quantum anomalous Hall effect in real materials
Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Yang, Zhongqin
2016-11-01
Under a strong magnetic field, the quantum Hall (QH) effect can be observed in two-dimensional electronic gas systems. If the quantized Hall conductivity is acquired in a system without the need of an external magnetic field, then it will give rise to a new quantum state, the quantum anomalous Hall (QAH) state. The QAH state is a novel quantum state that is insulating in the bulk but exhibits unique conducting edge states topologically protected from backscattering and holds great potential for applications in low-power-consumption electronics. The realization of the QAH effect in real materials is of great significance. In this paper, we systematically review the theoretical proposals that have been brought forward to realize the QAH effect in various real material systems or structures, including magnetically doped topological insulators, graphene-based systems, silicene-based systems, two-dimensional organometallic frameworks, quantum wells, and functionalized Sb(111) monolayers, etc. Our paper can help our readers to quickly grasp the recent developments in this field. Project supported by the National Basic Research Program of China (Grant No. 2011CB921803), the National Natural Science Foundation of China (Grant No. 11574051), the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1403400), and Fudan High-end Computing Center, China.
Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser
2016-05-01
Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.
Guterding, Daniel; Jeschke, Harald O; Valentí, Roser
2016-05-17
Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.
Guterding, Daniel; Jeschke, Harald O.; Valentí, Roser
2016-01-01
Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions. PMID:27185665
Destruction of the Fractional Quantum Hall Effect by Disorder
Laughlin, R. B.
1985-07-01
It is suggested that Hall steps in the fractional quantum Hall effect are physically similar to those in the ordinary quantum Hall effect. This proposition leads to a simple scaling diagram containing a new type of fixed point, which is identified with the destruction of the fractional states by disorder. 15 refs., 3 figs.
Excitons in the Fractional Quantum Hall Effect
Laughlin, R. B.
1984-09-01
Quasiparticles of charge 1/m in the Fractional Quantum Hall Effect form excitons, which are collective excitations physically similar to the transverse magnetoplasma oscillations of a Wigner crystal. A variational exciton wavefunction which shows explicitly that the magnetic length is effectively longer for quasiparticles than for electrons is proposed. This wavefunction is used to estimate the dispersion relation of these excitons and the matrix elements to generate them optically out of the ground state. These quantities are then used to describe a type of nonlinear conductivity which may occur in these systems when they are relatively clean.
The quantum Hall's effect:A quantum electrodynamic phenomenon
Institute of Scientific and Technical Information of China (English)
A.I. Arbab
2012-01-01
We have applied Maxwell's equations to study the physics of quantum Hall's effect.The electromagnetic properties of this system are obtained.The Hall's voltage,VH =2πh2ns/e rn,where ns is the electron number density,for a 2-dimensional system,and h =2πh is the Planck's constant,is found to coincide with the voltage drop across the quantum capacitor.Consideration of the cyclotronic motion of electrons is found to give rise to Hall's resistance.Ohmic resistances in the horizontal and vertical directions have been found to exist before equilibrium state is reached.At a fundamental level,the Hall's effect is found to be equivalent to a resonant LCR circuit with LH =2π m/e2ns and CH =me2/2πh2ns satisfying the resonance condition with resonant frequency equal to the inverse of the scattering (relaxation) time,Ts.The Hall's resistance is found to be RH =√LH/CH.The Hall's resistance may be connected with the impedance that the electron wave experiences when it propagates in the 2-dimeasional gas.
In-plane magnetization-induced quantum anomalous Hall effect.
Liu, Xin; Hsu, Hsiu-Chuan; Liu, Chao-Xing
2013-08-23
The quantum Hall effect can only be induced by an out-of-plane magnetic field for two-dimensional electron gases, and similarly, the quantum anomalous Hall effect has also usually been considered for systems with only out-of-plane magnetization. In the present work, we predict that the quantum anomalous Hall effect can be induced by in-plane magnetization that is not accompanied by any out-of-plane magnetic field. Two realistic two-dimensional systems, Bi2Te3 thin film with magnetic doping and HgMnTe quantum wells with shear strains, are presented and the general condition for the in-plane magnetization-induced quantum anomalous Hall effect is discussed based on the symmetry analysis. Nonetheless, an experimental setup is proposed to confirm this effect, the observation of which will pave the way to search for the quantum anomalous Hall effect in a wider range of materials.
Bulk Versus Edge in the Quantum Hall Effect
Kao, Y. -C.; Lee, D.-H.
1996-01-01
The manifestation of the bulk quantum Hall effect on edge is the chiral anomaly. The chiral anomaly {\\it is} the underlying principle of the ``edge approach'' of quantum Hall effect. In that approach, $\\sxy$ should not be taken as the conductance derived from the space-local current-current correlation function of the pure one-dimensional edge problem.
Formulation of the Relativistic Quantum Hall Effect and "Parity Anomaly"
Yonaga, Kouki; Shibata, Naokazu
2016-01-01
We present a relativistic formulation of the quantum Hall effect on a Riemann sphere. An explicit form of the pseudopotential is derived for the relativistic quantum Hall effect with/without mass term.We clarify particular features of the relativistic quantum Hall states with use of the exact diagonalization study of the pseudopotential Hamiltonian. Physical effects of the mass term to relativistic quantum Hall states are investigated in detail.The mass term acts as an interporating parameter between the relativistic and non-relativistic quantum Hall effects. It is pointed out that the mass term inequivalently affects to many-body physics of the positive and negative Landau levels and brings instability of the Laughlin state of the positive first relativistic Landau level as a consequence of the "parity anomaly".
Unconventional quantum Hall effect in Floquet topological insulators
Tahir, M.
2016-07-27
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.
Unconventional quantum Hall effect in Floquet topological insulators.
Tahir, M; Vasilopoulos, P; Schwingenschlögl, U
2016-09-28
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text].
Composite particle and field theory in atomic quantum Hall effect
Institute of Scientific and Technical Information of China (English)
Zhao Bo; Chen Zeng-Bing
2005-01-01
In this paper, we explore the composite particle description of the atomic quantum Hall (QH) effect. We further give the Chern-Simon-Gross-Pitaevskii (CSGP) effective theory for the atomic Hall liquid, which is the counterpart of Chern-Simon theory in electron Hall effect. What we obtained is equivalent to the Laughlin wavefunction approach.Our results show that in terms of composite particles, the atomic Hall effect is really the same as the electronic QH effect. The CSGP effective theory would shed new light on the atomic QH effect.
Quantized Thermal Transport in the Fractional Quantum Hall Effect
Kane, C. L.; Fisher, Matthew P. A.
1996-01-01
We analyze thermal transport in the fractional quantum Hall effect (FQHE), employing a Luttinger liquid model of edge states. Impurity mediated inter-channel scattering events are incorporated in a hydrodynamic description of heat and charge transport. The thermal Hall conductance, $K_H$, is shown to provide a new and universal characterization of the FQHE state, and reveals non-trivial information about the edge structure. The Lorenz ratio between thermal and electrical Hall conductances {\\i...
Fractional quantum Hall effect in the absence of Landau levels.
Sheng, D N; Gu, Zheng-Cheng; Sun, Kai; Sheng, L
2011-07-12
It is well known that the topological phenomena with fractional excitations, the fractional quantum Hall effect, will emerge when electrons move in Landau levels. Here we show the theoretical discovery of the fractional quantum Hall effect in the absence of Landau levels in an interacting fermion model. The non-interacting part of our Hamiltonian is the recently proposed topologically non-trivial flat-band model on a checkerboard lattice. In the presence of nearest-neighbouring repulsion, we find that at 1/3 filling, the Fermi-liquid state is unstable towards the fractional quantum Hall effect. At 1/5 filling, however, a next-nearest-neighbouring repulsion is needed for the occurrence of the 1/5 fractional quantum Hall effect when nearest-neighbouring repulsion is not too strong. We demonstrate the characteristic features of these novel states and determine the corresponding phase diagram.
Higher (odd dimensional quantum Hall effect and extended dimensional hierarchy
Directory of Open Access Journals (Sweden)
Kazuki Hasebe
2017-07-01
Full Text Available We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S2k−1 in the SO(2k−1 monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S2k−1 to the one-dimension higher SO(2k gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah–Patodi–Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.
Higher (odd) dimensional quantum Hall effect and extended dimensional hierarchy
Hasebe, Kazuki
2017-07-01
We demonstrate dimensional ladder of higher dimensional quantum Hall effects by exploiting quantum Hall effects on arbitrary odd dimensional spheres. Non-relativistic and relativistic Landau models are analyzed on S 2 k - 1 in the SO (2 k - 1) monopole background. The total sub-band degeneracy of the odd dimensional lowest Landau level is shown to be equal to the winding number from the base-manifold S 2 k - 1 to the one-dimension higher SO (2 k) gauge group. Based on the chiral Hopf maps, we clarify the underlying quantum Nambu geometry for odd dimensional quantum Hall effect and the resulting quantum geometry is naturally embedded also in one-dimension higher quantum geometry. An origin of such dimensional ladder connecting even and odd dimensional quantum Hall effects is illuminated from a viewpoint of the spectral flow of Atiyah-Patodi-Singer index theorem in differential topology. We also present a BF topological field theory as an effective field theory in which membranes with different dimensions undergo non-trivial linking in odd dimensional space. Finally, an extended version of the dimensional hierarchy for higher dimensional quantum Hall liquids is proposed, and its relationship to quantum anomaly and D-brane physics is discussed.
Chern-Simons Dynamics and the Quantum Hall Effect
Balachandran, A P
1991-01-01
Theoretical developments during the past several years have shown that large scale properties of the Quantum Hall system can be successfully described by effective field theories which use the Chern-Simons interaction. In this article, we first recall certain salient features of the Quantum Hall Effect and their microscopic explanation. We then review one particular approach to their description based on the Chern-Simons Lagrangian and its variants.
Few-body, hyperspherical treatment of the quantum Hall effect
Directory of Open Access Journals (Sweden)
Wooten R. E.
2016-01-01
Full Text Available The quantum Hall effect arises from the quantum behavior of two-dimensional, strongly-interacting electrons exposed to a strong, perpendicular magnetic field [1, 2]. Conventionally treated from a many-body perspective, we instead treat the system from the few-body perspective using collective coordinates and the hyperspherical adiabatic technique developed originally for atomic systems [3]. The grand angular momentum K from K-harmonic few-body theory, is shown to be an approximate good collective quantum number in this system, and is shown to correlate with known fractional quantum Hall (FQH states at experimentally observed filling factors.
The spin Hall effect in a quantum gas.
Beeler, M C; Williams, R A; Jiménez-García, K; LeBlanc, L J; Perry, A R; Spielman, I B
2013-06-13
Electronic properties such as current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom possessed by quantum particles. The spin Hall effect, first proposed 40 years ago, is an unusual class of phenomena in which flowing particles experience orthogonally directed, spin-dependent forces--analogous to the conventional Lorentz force that gives the Hall effect, but opposite in sign for two spin states. Spin Hall effects have been observed for electrons flowing in spin-orbit-coupled materials such as GaAs and InGaAs (refs 2, 3) and for laser light traversing dielectric junctions. Here we observe the spin Hall effect in a quantum-degenerate Bose gas, and use the resulting spin-dependent Lorentz forces to realize a cold-atom spin transistor. By engineering a spatially inhomogeneous spin-orbit coupling field for our quantum gas, we explicitly introduce and measure the requisite spin-dependent Lorentz forces, finding them to be in excellent agreement with our calculations. This 'atomtronic' transistor behaves as a type of velocity-insensitive adiabatic spin selector, with potential application in devices such as magnetic or inertial sensors. In addition, such techniques for creating and measuring the spin Hall effect are clear prerequisites for engineering topological insulators and detecting their associated quantized spin Hall effects in quantum gases. As implemented, our system realizes a laser-actuated analogue to the archetypal semiconductor spintronic device, the Datta-Das spin transistor.
Anisotropic intrinsic spin Hall effect in quantum wires.
Cummings, A W; Akis, R; Ferry, D K
2011-11-23
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [N110] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications.
Graphene and the universality of the quantum Hall effect
DEFF Research Database (Denmark)
Tzalenchuk, A.; Janssen, T. J.B.M.; Kazakova, O.
2013-01-01
The quantum Hall effect allows the standard for resistance to be defined in terms of the elementary charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of RK=h/e2=25812.8074434(84) Ω (Mohr P. J....... et al., Rev. Mod. Phys., 84 (2012) 1527), the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology, a few parts per billion, has been achieved only in silicon and III-V heterostructure devices. In this lecture we show...... that graphene - a single layer of carbon atoms - beats these well-established semiconductor materials as the system of choice for the realisation of the quantum resistance standard. Here we shall briefly describe graphene technology, discuss the structure and electronic properties of graphene, including...
Photonic analogue of quantum spin Hall effect
He, Cheng; Liu, Xiao-ping; Lu, Ming-Hui; Chen, Yulin; Feng, Liang; Chen, Yan-Feng
2014-01-01
Symmetry-protected photonic topological insulator exhibiting robust pseudo-spin-dependent transportation, analogous to quantum spin Hall (QSH) phases and topological insulators, are of great importance in fundamental physics. Such transportation robustness is protected by time-reversal symmetry. Since electrons (fermion) and photons (boson) obey different statistics rules and associate with different time-reversal operators (i.e., Tf and Tb, respectively), whether photonic counterpart of Kramers degeneracy is topologically protected by bosonic Tb remains unidentified. Here, we construct the degenerate gapless edge states of two photonic pseudo-spins (left/right circular polarizations) in the band gap of a two-dimensional photonic crystal with strong magneto-electric coupling. We further demonstrated that the topological edge states are in fact protected by Tf rather than commonly believed Tb and their pseudo-spin dependent transportation is robust against Tf invariant impurities, discovering for the first tim...
Topological insulator in junction with ferromagnets: Quantum Hall effects
Chudnovskiy, A. L.; Kagalovsky, V.
2015-06-01
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations in the FM leads, which inspires the use of FM-TI-FM junctions as electrical and as heat switches in spintronic devices. Thermal and electrical Hall coefficients are calculated as functions of the magnetization directions in ferromagnets and the spin-relaxation time in TI. Both the Hall voltage and the transverse temperature gradient decrease but are not completely suppressed even at very short spin-relaxation times. The Hall coefficients turn out to be independent of the spin-relaxation time for symmetric configuration of FM leads.
Quantum Hall effect in kagome lattices under staggered magnetic field
Energy Technology Data Exchange (ETDEWEB)
Zhang Zhiyong, E-mail: zyzhang@nju.edu.cn [Department of Physics, Nanjing University, Nanjing 210093 (China)
2011-10-26
The interplay of staggered magnetic field (SMF) and uniform magnetic field (UMF) on the quantum Hall effect (QHE) in kagome lattices is investigated in the weak UMF limit. The topological band gaps coming from SMF are robust against UMF although the extended bands split into a series of Landau levels. With SMF applied, in the unconventional QHE region, one plateau of Hall conductance becomes wider and the others are compressed. Meanwhile, one of the two series of integer Hall plateaus splits and the resulting two series of Hall plateaus still exhibit the integer behavior. The Hall conductance varies with SMF step by step with the step height being e{sup 2}/h or 2e{sup 2}/h according to the QHE being conventional or unconventional. In the transitional regions, redistribution of Chern numbers happens even in the weak UMF limit. (paper)
Quantum anomalous Hall effect in magnetic insulator heterostructure.
Xu, Gang; Wang, Jing; Felser, Claudia; Qi, Xiao-Liang; Zhang, Shou-Cheng
2015-03-11
On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we predict that 3D quantum anomalous Hall insulator could be realized in (Bi2/3Cr1/3)2Te3 /GdI2 superlattice.
The Quantum Hall Effect in Supersymmetric Chern-Simons Theories
Tong, David
2015-01-01
In d=2+1 dimensions, there exist gauge theories which are supersymmetric but non-relativistic. We solve the simplest U(1) gauge theory in this class and show that the low-energy physics is that of the fractional quantum Hall effect, with ground states given by the Laughlin wavefunctions. We do this by quantising the vortices and relating them to the quantum Hall matrix model. We further construct coherent state representations of the excitations of vortices. These are quasi-holes. By an explicit computation of the Berry phase, without resorting to a plasma analogy, we show that these excitations have fractional charge and spin.
Hall effect in quantum critical charge-cluster glass.
Wu, Jie; Bollinger, Anthony T; Sun, Yujie; Božović, Ivan
2016-04-19
Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4(LSCO) samples doped near the quantum critical point atx∼ 0.06. Dramatic fluctuations in the Hall resistance appear belowTCG∼ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,Δx∼ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.
The local nature of incompressibility of quantum Hall effect
Kendirlik, E. M.; Sirt, S.; Kalkan, S. B.; Ofek, N.; Umansky, V.; Siddiki, A.
2017-01-01
Since the experimental realization of the integer quantum Hall effect in a two-dimensional electron system, the interrelation between the conductance quantization and the topological properties of the system has been investigated. Assuming that the two-dimensional electron system is described by a Bloch Hamiltonian, system is insulating in the bulk of sample throughout the quantum Hall plateau due to a magnetic field induced energy gap. Meanwhile, the system is conducting at the edges resembling a 2+1 dimensional topological insulator without time-reversal symmetry. Here, by our magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contacts we show that incompressible strips formed at the edges result in Hall quantization, even if the bulk is compressible. Consequently, the relationship between the quantum Hall effect and topological bulk insulator breaks for specific field intervals within the plateaus. The measurement of conducting bulk, strongly challenges all existing single-particle theories. PMID:28071652
The local nature of incompressibility of quantum Hall effect
Kendirlik, E. M.; Sirt, S.; Kalkan, S. B.; Ofek, N.; Umansky, V.; Siddiki, A.
2017-01-01
Since the experimental realization of the integer quantum Hall effect in a two-dimensional electron system, the interrelation between the conductance quantization and the topological properties of the system has been investigated. Assuming that the two-dimensional electron system is described by a Bloch Hamiltonian, system is insulating in the bulk of sample throughout the quantum Hall plateau due to a magnetic field induced energy gap. Meanwhile, the system is conducting at the edges resembling a 2+1 dimensional topological insulator without time-reversal symmetry. Here, by our magneto-transport measurements performed on GaAs/AlGaAs high purity Hall bars with two inner contacts we show that incompressible strips formed at the edges result in Hall quantization, even if the bulk is compressible. Consequently, the relationship between the quantum Hall effect and topological bulk insulator breaks for specific field intervals within the plateaus. The measurement of conducting bulk, strongly challenges all existing single-particle theories.
Towards a quantum Hall effect for atoms using electric fields
Ericsson, M; Ericsson, Marie; Sjoqvist, Erik
2002-01-01
An atomic analogue of Landau quantization based on the Aharonov-Casher (AC) interaction is developed. The effect provides a first step towards an atomic quantum Hall system using electric fields, which may be realized in a Bose-Einstein condensate.
Effect of quantum tunneling on spin Hall magnetoresistance
Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk
2017-02-01
We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y3Fe5O12) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.
Dynamical quantum Hall effect in the parameter space.
Gritsev, V; Polkovnikov, A
2012-04-24
Geometric phases in quantum mechanics play an extraordinary role in broadening our understanding of fundamental significance of geometry in nature. One of the best known examples is the Berry phase [M.V. Berry (1984), Proc. Royal. Soc. London A, 392:45], which naturally emerges in quantum adiabatic evolution. So far the applicability and measurements of the Berry phase were mostly limited to systems of weakly interacting quasi-particles, where interference experiments are feasible. Here we show how one can go beyond this limitation and observe the Berry curvature, and hence the Berry phase, in generic systems as a nonadiabatic response of physical observables to the rate of change of an external parameter. These results can be interpreted as a dynamical quantum Hall effect in a parameter space. The conventional quantum Hall effect is a particular example of the general relation if one views the electric field as a rate of change of the vector potential. We illustrate our findings by analyzing the response of interacting spin chains to a rotating magnetic field. We observe the quantization of this response, which we term the rotational quantum Hall effect.
Quantum anomalous Hall effect in topological insulator memory
Energy Technology Data Exchange (ETDEWEB)
Jalil, Mansoor B. A., E-mail: elembaj@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); Tan, S. G. [Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, Singapore 117576 (Singapore); Siu, Z. B. [Data Storage Institute, Agency for Science, Technology and Research A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, Singapore 117608 (Singapore); NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore (Singapore)
2015-05-07
We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.
Quantum anomalous Hall effect in magnetically doped InAs/GaSb quantum wells.
Wang, Qing-Ze; Liu, Xin; Zhang, Hai-Jun; Samarth, Nitin; Zhang, Shou-Cheng; Liu, Chao-Xing
2014-10-03
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)(2)Te(3) at a low temperature (∼ 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.
The transport mechanism of the integer quantum Hall effect
LiMing, W
2016-01-01
The integer quantum Hall effect is analysed using a transport mechanism with a semi-classic wave packages of electrons in this paper. A strong magnetic field perpendicular to a slab separates the electron current into two branches with opposite wave vectors $({\\it k})$ and locating at the two edges of the slab, respectively, along the current. In this case back scattering of electrons ($k\\rightarrow -k$) is prohibited by the separation of electron currents. Thus the slab exhibits zero longitudinal resistance and plateaus of Hall resistance. When the Fermi level is scanning over a Landau level when the magnetic field increases, however, the electron waves locate around the central axis of the slab and overlap each other thus back scattering of electrons takes place frequently. Then longitudinal resistance appears and the Hall resistance goes up from one plateau to a new plateau.
Quantum Hall effect in epitaxial graphene with permanent magnets
Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.
2016-12-01
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.
Nonlinear Quantum Hall effects in Rarita-Schwinger gas
Luo, Xi; Wan, Xiangang; Yu, Yue
2016-01-01
Emergence of higher spin relativistic fermionic materials becomes a new favorite in the study of condensed matter physics. Massive Rarita-Schwinger 3/2-spinor was known owning very exotic properties, such as the superluminal fermionic modes and even being unstable in an external magnetic field. Due to the superluminal modes and the non-trivial constraints on the Rarita-Schwinger gas, we exposit anomalous properties of the Hall effects in (2+1)-dimensions which subvert the well-known quantum Hall paradigms. First, the Hall conductance of a pure Rarita-Schwinger gas is step-like but not plateau-quantized, instead of the linear dependence on the filling factor for a pure spin-1/2 Dirac gas. In reality, the Hall conductance of the Dirac gas is of quantized integer plateaus with the unit $\\frac{e^2}h$ due to the localization away from the Landau level centers. If the general localization rule is applicable to the disordered Rarita-Schwinger gas, the Hall plateaus are also expected to appear but they are nonlinearl...
The quantum Hall effect and its contexts
Rodríguez,Víctor
2017-01-01
En este artículo, se atienden ciertas facetas conceptuales y experimentales del efecto Hall cuántico. Se argumenta que el mismo ofrece variados matices para la reflexión filosófica, desde la generación de entidades teóricas hasta la epistemología de la experimentación. La exposición pretende mantener cierta sensibilidad por la dinámica histórica en torno del tema, como así también por las implicaciones metrológicas de ámbitos cuánticos específicos. Dada la enorme producción científica sobre e...
Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells
Energy Technology Data Exchange (ETDEWEB)
Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-19
Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.
The integer quantum hall effect revisited
Energy Technology Data Exchange (ETDEWEB)
Michalakis, Spyridon [Los Alamos National Laboratory; Hastings, Matthew [Q STATION, CALIFORNIA
2009-01-01
For T - L x L a finite subset of Z{sup 2}, let H{sub o} denote a Hamiltonian on T with periodic boundary conditions and finite range, finite strength intetactions and a unique ground state with a nonvanishing spectral gap. For S {element_of} T, let q{sub s} denote the charge at site s and assume that the total charge Q = {Sigma}{sub s {element_of} T} q{sub s} is conserved. Using the local charge operators q{sub s}, we introduce a boundary magnetic flux in the horizontal and vertical direction and allow the ground state to evolve quasiadiabatically around a square of size one magnetic flux, in flux space. At the end of the evolution we obtain a trivial Berry phase, which we compare, via a method reminiscent of Stokes Theorem. to the Berry phase obtained from an evolution around an exponentially small loop near the origin. As a result, we show, without any averaging assumption, that the Hall conductance is quantized in integer multiples of e{sup 2}/h up to exponentially small corrections of order e{sup -L/{zeta}}, where {zeta}, is a correlation length that depends only on the gap and the range and strength of the interactions.
Emergence of integer quantum Hall effect from chaos
Tian, Chushun; Wang, Jiao
2015-01-01
We present an analytic microscopic theory showing that in a large class of spin-$\\frac{1}{2}$ quasiperiodic quantum kicked rotors, a dynamical analog of the integer quantum Hall effect (IQHE) emerges from an intrinsic chaotic structure. Specifically, the inverse of the Planck's quantum ($h_e$) and the rotor's energy growth rate mimic the `filling fraction' and the `longitudinal conductivity' in conventional IQHE, respectively, and a hidden quantum number is found to mimic the `quantized Hall conductivity'. We show that for an infinite discrete set of critical values of $h_e$, the long-time energy growth rate is universal and of order of unity (`metallic' phase), but otherwise vanishes (`insulating' phase). Moreover, the rotor insulating phases are topological, each of which is characterized by a hidden quantum number. This number exhibits universal behavior for small $h_e$, i.e., it jumps by unity whenever $h_e$ decreases, passing through each critical value. This intriguing phenomenon is not triggered by the...
Gerhardts, Rolf R.
2017-01-01
Recent low-temperature scanning-force-microscopy experiments on narrow Hall bars, under the conditions of the integer quantum Hall effect (IQHE) and its breakdown, have revealed an interesting position dependence of the Hall potential, which changes drastically with the applied magnetic field and the strength of the imposed current through the sample. The present paper shows, that inclusion of Joule heating into an existing self-consistent theory of screening and magneto-transport, which assumes translation invariant Hall bars with a homogeneous background charge due to doping, can explain the experimental results on the breakdown of the IQHE in the so called edge-dominated regime.
Covariant effective action for a Galilean invariant quantum Hall system
Geracie, Michael; Prabhu, Kartik; Roberts, Matthew M.
2016-09-01
We construct effective field theories for gapped quantum Hall systems coupled to background geometries with local Galilean invariance i.e. Bargmann spacetimes. Along with an electromagnetic field, these backgrounds include the effects of curved Galilean spacetimes, including torsion and a gravitational field, allowing us to study charge, energy, stress and mass currents within a unified framework. A shift symmetry specific to single constituent theories constraints the effective action to couple to an effective background gauge field and spin connection that is solved for by a self-consistent equation, providing a manifestly covariant extension of Hoyos and Son's improvement terms to arbitrary order in m.
Quark confinement and the fractional quantum Hall effect
Institute of Scientific and Technical Information of China (English)
WANG Hai-Jun; GENG Wen-Tong
2008-01-01
Working in the physics of Wilson factor and Aharonov-Bohm effect,we find in the fluxtubequark system the topology of a baryon consisting of three heavy flavor quarks resembles that of the fractional quantum Hall effect(FQHE)in condensed matter.This similarity yields the result that the constituent quarks of baryon have the"filling factor"1/3.thus the previous conjecture that quark confinement is a correlation effect is confirmed.Moreover,by deriving a Hamiltonian of the system analogous to that of FQHE,we predict an energy gap for the ground state of a heavy three-quark system.
Spin analogs of superconductivity and integer quantum Hall effect in an array of spin chains
Hill, Daniel; Kim, Se Kwon; Tserkovnyak, Yaroslav
2017-05-01
Motivated by the successful idea of using weakly coupled quantum electronic wires to realize the quantum Hall effects and the quantum spin Hall effects, we theoretically study two systems composed of weakly coupled quantum spin chains within the mean-field approximations, which can exhibit spin analogs of superconductivity and the integer quantum Hall effect. First, a certain bilayer of two arrays of interacting spin chains is mapped, via the Jordan-Wigner transformation, to an attractive Hubbard model that exhibits fermionic superconductivity, which corresponds to spin superconductivity in the original spin Hamiltonian. Secondly, an array of spin-orbit-coupled spin chains in the presence of a suitable external magnetic field is transformed to an array of quantum wires that exhibits the integer quantum Hall effect, which translates into its spin analog in the spin Hamiltonian. The resultant spin superconductivity and spin integer quantum Hall effect can be characterized by their ability to transport spin without any resistance.
Admittance measurements in the quantum Hall effect regime
Energy Technology Data Exchange (ETDEWEB)
Hernández, C., E-mail: carlos.hernandezr@unimilitar.edu.co [Departamento de Física, Universidad Militar Nueva Granada, Carrera 11 # 101-80, Bogotá D.C. (Colombia); Laboratorio de Magnetismo, Departamento de Física, Universidad de los Andes, A.A. 4976, Bogotá D.C. (Colombia); Consejo, C.; Chaubet, C. [Laboratoire Charles Coulomb L2C, Université Montpellier II, Pl. E. Bataillon, 34095 Montpellier Cedex 5 (France)
2014-11-15
In this work we present an admittance study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. We have studied several Hall bars in different contacts configurations in the frequency range 100 Hz–1 MHz. Our interpretation is based on the Landauer–Büttiker theory and takes into account both the capacitance and the topology of the coaxial cables which are connected to the sample holder. We show that we always observe losses through the capacitive impedance of the coaxial cables, except in the two contacts configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the 2DEG and show its dependence with the filling factor ν.
Vortex equations governing the fractional quantum Hall effect
Energy Technology Data Exchange (ETDEWEB)
Medina, Luciano, E-mail: lmedina@nyu.edu [Department of Mathematics, Polytechnic School of Engineering, New York University, Brooklyn, New York 11201 (United States)
2015-09-15
An existence theory is established for a coupled non-linear elliptic system, known as “vortex equations,” describing the fractional quantum Hall effect in 2-dimensional double-layered electron systems. Via variational methods, we prove the existence and uniqueness of multiple vortices over a doubly periodic domain and the full plane. In the doubly periodic situation, explicit sufficient and necessary conditions are obtained that relate the size of the domain and the vortex numbers. For the full plane case, existence is established for all finite-energy solutions and exponential decay estimates are proved. Quantization phenomena of the magnetic flux are found in both cases.
$W_{\\infty}$ algebra in the integer quantum Hall effects
Azuma, Hiroo
1994-01-01
We investigate the $W_{\\infty}$ algebra in the integer quantum Hall effects. Defining the simplest vacuum, the Dirac sea, we evaluate the central extension for this algebra. A new algebra which contains the central extension is called the $W_{1+\\infty}$ algebra. We show that this $W_{1+\\infty}$ algebra is an origin of the Kac-Moody algebra which determines the behavior of edge states of the system. We discuss the relation between the $W_{1+\\infty}$ algebra and the incompressibility of the int...
Deformed Calogero-Sutherland model and fractional quantum Hall effect
Atai, Farrokh; Langmann, Edwin
2017-01-01
The deformed Calogero-Sutherland (CS) model is a quantum integrable system with arbitrary numbers of two types of particles and reducing to the standard CS model in special cases. We show that a known collective field description of the CS model, which is based on conformal field theory (CFT), is actually a collective field description of the deformed CS model. This provides a natural application of the deformed CS model in Wen's effective field theory of the fractional quantum Hall effect (FQHE), with the two kinds of particles corresponding to electrons and quasi-hole excitations. In particular, we use known mathematical results about super-Jack polynomials to obtain simple explicit formulas for the orthonormal CFT basis proposed by van Elburg and Schoutens in the context of the FQHE.
Current Percolation in Medium with Boundaries under Quantum Hall Effect Conditions
Directory of Open Access Journals (Sweden)
M. U. Malakeeva
2012-01-01
Full Text Available The current percolation has been considered in the medium with boundaries under quantum Hall effect conditions. It has been shown that in that case the effective Hall conductivity has a nonzero value due to percolation of the Hall current through the finite number of singular points (in our model these are corners at the phase joints.
Edge states and integer quantum Hall effect in topological insulator thin films.
Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing
2015-08-25
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.
Matrix method analysis of quantum Hall effect device connections
Ortolano, M.; Callegaro, L.
2012-02-01
The modelling of electrical connections of single, or several, multiterminal quantum Hall effect (QHE) devices is relevant for electrical metrology: it is known, in fact, that certain particular connections allow (i) the realization of multiples or fractions of the quantized resistance, or (ii) the rejection of stray impedances, so that the configuration maintains the status of quantum standard. Ricketts-Kemeny and Delahaye equivalent circuits are known to be accurate models of the QHE: however, the numerical or analytical solution of electrical networks including these equivalent circuits can be difficult. In this paper, we introduce a method of analysis based on the representation of a QHE device by means of the indefinite admittance matrix: external connections are then represented with another matrix, easily written by inspection. Some examples, including the solution of double- and triple-series connections, are shown.
Matrix method analysis of quantum Hall effect device connections
Ortolano, Massimo
2011-01-01
The modelling of electrical connections of single, or several, multiterminal quantum Hall effect (QHE) devices is relevant for electrical metrology: it is known, in fact, that certain particular connections allow i) the realization of multiples or fractions of the quantised resistance, or ii) the rejection of stray impedances, so that the configuration maintains the status of quantum standard. Ricketts-Kemeny and Delahaye equivalent circuits are known to be accurate models of the QHE: however, the numerical or analytical solution of electrical networks including these equivalent circuits can be difficult. In this paper, we introduce a method of analysis based on the representation of a QHE device by means of the \\emph{indefinite admittance matrix}: external connections are then represented with another matrix, easily written by inspection. Some examples, including the solution of double- and triple-series connections, are shown.
Massive Dirac fermions and the zero field quantum Hall effect
Raya, Alfredo
2008-01-01
Through an explicit calculation for a Lagrangian in quantum electrodynamics in (2+1)-space--time dimensions (QED$_3$), making use of the relativistic Kubo formula, we demonstrate that the filling factor accompanying the quantized electrical conductivity for massive Dirac fermions of a single species in two spatial dimensions is a half (in natural units) when time reversal and parity symmetries of the Lagrangian are explicitly broken by the fermion mass term. We then discuss the most general form of the QED$_3$ Lagrangian, both for irreducible and reducible representations of the Dirac matrices in the plane, with emphasis on the appearance of a Chern-Simons term. We also identify the value of the filling factor with a zero field quantum Hall effect (QHE).
Massive Dirac fermions and the zero field quantum Hall effect
Raya, Alfredo; Reyes, Edward D.
2008-09-01
Through an explicit calculation for a Lagrangian in quantum electrodynamics in (2+1)-spacetime dimensions (QED3), making use of the relativistic Kubo formula, we demonstrate that the filling factor accompanying the quantized electrical conductivity for massive Dirac fermions of a single species in two spatial dimensions is a half (in natural units) when time reversal and parity symmetries of the Lagrangian are explicitly broken by the fermion mass term. We then discuss the most general form of the QED3 Lagrangian, for both irreducible and reducible representations of the Dirac matrices in the plane, with emphasis on the appearance of a Chern-Simons term. We also identify the value of the filling factor with a zero field quantum Hall effect (QHE).
Quantum spin Hall effect in twisted bilayer graphene
Finocchiaro, F.; Guinea, F.; San-Jose, P.
2017-06-01
Motivated by a recent experiment (Sanchez-Yamagishi et al 2016 Nat. Nanotechnol. 214) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a quantum spin Hall (QSH) phase in such a system, without Zeeman or spin-orbit couplings, and with a QSH gap induced instead by electronic interactions. We analyse how magnetic flux, electric field, interlayer rotation angle, and interactions (treated at a mean field level) combine to produce a pseudo-QSH with broken time-reversal symmetry, and spin-polarized helical edge states. The effect is a consequence of a robust interaction-induced ferrimagnetic ordering of the quantum Hall ground state under an interlayer bias, provided the two rotated layers are effectively decoupled at low energies. We discuss in detail the electronic structure and the constraints on system parameters, such as the angle, interactions and magnetic flux, required to reach the pseudo-QSH phase. We find, in particular, that purely local electronic interactions are not sufficient to account for the experimental observations, which demand at least nearest-neighbour interactions to be included.
Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-04-26
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.
The Quantum Spin Hall Effect: Theory and Experiment
Energy Technology Data Exchange (ETDEWEB)
Konig, Markus; Buhmann, Hartmut; Molenkamp, Laurens W.; /Wurzburg U.; Hughes, Taylor L.; /Stanford U., Phys. Dept.; Liu, Chao-Xing; /Tsinghua U., Beijing /Stanford U., Phys. Dept.; Qi, Xiao-Liang; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.
2010-03-19
The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in the bulk, but have topologically protected edge states due to the time reversal symmetry. In two dimensions the helical edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. Here we review a recent theory which predicts that the QSH state can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the band structure changes from a normal to an 'inverted' type at a critical thickness d{sub c}. We present an analytical solution of the helical edge states and explicitly demonstrate their topological stability. We also review the recent experimental observation of the QSH state in HgTe/(Hg,Cd)Te quantum wells. We review both the fabrication of the sample and the experimental setup. For thin quantum wells with well width d{sub QW} < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d{sub QW} > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e{sup 2}/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d{sub c} = 6.3 nm, is also independently determined from the occurrence of a magnetic field induced insulator to metal transition.
Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.
Feng, Xiao; Feng, Yang; Wang, Jing; Ou, Yunbo; Hao, Zhenqi; Liu, Chang; Zhang, Zuocheng; Zhang, Liguo; Lin, Chaojing; Liao, Jian; Li, Yongqing; Wang, Li-Li; Ji, Shuai-Hua; Chen, Xi; Ma, Xucun; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Xue, Qi-Kun
2016-08-01
The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.
Time-reversal-breaking induced quantum spin Hall effect
Luo, Wei; Shao, D. X.; Deng, Ming-Xun; Deng, W. Y.; Sheng, L.
2017-01-01
We show that quantum spin Hall (QSH) effect does not occur in a square lattice model due to cancellation of the intrinsic spin-orbit coupling coming from different hopping paths. However, we show that QSH effect can be induced by the presence of staggered magnetic fluxes alternating directions square by square. When the resulting Peierls phase takes a special value , the system has a composite symmetry ΘΡ− with Θ the time-reversal operator and Ρ− transforming the Peierls phase from γ to γ − , which protects the gapless edge states. Once the phase deviates from , the edge states open a gap, as the composite symmetry is broken. We further investigate the effect of a Zeeman field on the QSH state, and find that the edge states remain gapless for . This indicates that the QSH effect is immune to the magnetic perturbation. PMID:28220858
Contacts and Edge State Equilibration in the Fractional Quantum Hall Effect
Kane, C. L.; Fisher, Matthew P. A.
1995-01-01
We develop a simple kinetic equation description of edge state dynamics in the fractional quantum Hall effect (FQHE), which allows us to examine in detail equilibration processes between multiple edge modes. As in the integer quantum Hall effect (IQHE), inter-mode equilibration is a prerequisite for quantization of the Hall conductance. Two sources for such equilibration are considered: Edge impurity scattering and equilibration by the electrical contacts. Several specific models for electric...
Pseudo Magnetic Faraday and Quantum Hall Effect In Oscillating Graphene
Bhagat, Anita; Mullen, Kieran
When a graphene layer is stressed, the strain changes the phase between sites in a tight binding model of the system. This phase can be viewed as a pseudo-magnetic vector potential. The corresponding pseudo-magnetic field has been experimentally verified in static cases. We examine the case of oscillating graphene ribbons and explore two new effects. The first is to investigate an oscillating pseudo-magnetic field that produces a quantum Hall effect: we calculate the I-V characteristic of an oscillating graphene nanoribbon as a function of frequency, and amplitude in both the oscillations and the applied driving voltage. Second, the time dependent pseudo-magnetic field should produce a pseudo-Faraday effect driving electrons in different valleys in opposite directions. In both cases, we make explicit calculations for experiment. This project was supported in part by the US National Science Foundation under Grant DMR-1310407.
The quantum anomalous Hall effect in kagome lattices
Energy Technology Data Exchange (ETDEWEB)
Zhang Zhiyong, E-mail: zyzhang@nju.edu.cn [Department of Physics, Nanjing University, Nanjing 210093 (China)
2011-09-14
The quantum anomalous Hall (QAH) effect in kagome lattices is investigated in the presence of both Rashba spin-orbit coupling and an exchange field. In addition to the gap at the Dirac points as found in graphene, a new topological energy gap is opened at the {Gamma} point. With the Fermi energy lying in the first gap, the Chern number c = 2 as in graphene, whereas with it lying in the second one, c = 1. The distribution of Berry curvature is obtained to reveal the nontrivial topological properties in momentum space. For stripes with 'armchair' and 'zigzag' edges, the topological characteristics of gapless edge states on the genus g = 2 Riemann surface are studied. The obtained nonzero winding numbers also demonstrate the QAH effect. (paper)
The quantum anomalous Hall effect in kagomé lattices.
Zhang, Zhi-Yong
2011-09-14
The quantum anomalous Hall (QAH) effect in kagomé lattices is investigated in the presence of both Rashba spin-orbit coupling and an exchange field. In addition to the gap at the Dirac points as found in graphene, a new topological energy gap is opened at the Γ point. With the Fermi energy lying in the first gap, the Chern number = 2 as in graphene, whereas with it lying in the second one, = 1. The distribution of Berry curvature is obtained to reveal the nontrivial topological properties in momentum space. For stripes with 'armchair' and 'zigzag' edges, the topological characteristics of gapless edge states on the genus g = 2 Riemann surface are studied. The obtained nonzero winding numbers also demonstrate the QAH effe
Quantum spin Hall effect and topological insulators for light
Bliokh, Konstantin Y
2015-01-01
We show that free-space light has intrinsic quantum spin-Hall effect (QSHE) properties. These are characterized by a non-zero topological spin Chern number, and manifest themselves as evanescent modes of Maxwell equations. The recently discovered transverse spin of evanescent modes demonstrates spin-momentum locking stemming from the intrinsic spin-orbit coupling in Maxwell equations. As a result, any interface between free space and a medium supporting surface modes exhibits QSHE of light with opposite transverse spins propagating in opposite directions. In particular, we find that usual isotropic metals with surface plasmon-polariton modes represent natural 3D topological insulators for light. Several recent experiments have demonstrated transverse spin-momentum locking and spin-controlled unidirectional propagation of light at various interfaces with evanescent waves. Our results show that all these experiments can be interpreted as observations of the QSHE of light.
Crossed Andreev effects in two-dimensional quantum Hall systems
Hou, Zhe; Xing, Yanxia; Guo, Ai-Min; Sun, Qing-Feng
2016-08-01
We study the crossed Andreev effects in two-dimensional conductor/superconductor hybrid systems under a perpendicular magnetic field. Both a graphene/superconductor hybrid system and an electron gas/superconductor one are considered. It is shown that an exclusive crossed Andreev reflection, with other Andreev reflections being completely suppressed, is obtained in a high magnetic field because of the chiral edge states in the quantum Hall regime. Importantly, the exclusive crossed Andreev reflection not only holds for a wide range of system parameters, e.g., the size of system, the width of central superconductor, and the quality of coupling between the graphene and the superconductor, but also is very robust against disorder. When the applied bias is within the superconductor gap, a robust Cooper-pair splitting process with high-efficiency can be realized in this system.
Generalized Pseudopotentials for the Anisotropic Fractional Quantum Hall Effect
Yang, Bo; Hu, Zi-Xiang; Lee, Ching Hua; Papić, Z.
2017-04-01
We generalize the notion of Haldane pseudopotentials to anisotropic fractional quantum Hall (FQH) systems that are physically realized, e.g., in tilted magnetic field experiments or anisotropic band structures. This formalism allows us to expand any translation-invariant interaction over a complete basis, and directly reveals the intrinsic metric of incompressible FQH fluids. We show that purely anisotropic pseudopotentials give rise to new types of bound states for small particle clusters in the infinite plane, and can be used as a diagnostic of FQH nematic order. We also demonstrate that generalized pseudopotentials quantify the anisotropic contribution to the effective interaction potential, which can be particularly large in models of fractional Chern insulators.
Sarma, Sankar Das
1996-01-01
The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century. The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has metrologically affected all of science and technology. This resource consists of contributions from the top researchers in the field who present recent experimental and theoretical developments. Each chapter is self-contained and includes its own set of references guiding rea
Hui, Hoi-Yin; Sau, Jay D.
2017-01-01
Time-reversal invariance places strong constraints on the properties of the quantum spin Hall edge. One such restriction is the inevitability of dissipation in a Josephson junction between two superconductors formed on such an edge without the presence of interaction. Interactions and spin-conservation breaking are key ingredients for the realization of the dissipationless ac Josephson effect on such quantum spin Hall edges. We present a simple quantum impurity model that allows us to create a dissipationless fractional Josephson effect on a quantum spin Hall edge. We then use this model to substantiate a general argument that shows that any such nondissipative Josephson effect must necessarily be 8 π periodic.
High-temperature intrinsic quantum anomalous Hall effect in rare Earth monohalide
Wu, Menghao
2017-06-01
Although the quantum anomalous Hall effect was verified in 2013, presently its experimental realization is limited to doped magnetic topological insulators under extremely low temperature, while its theoretical existence is limited within doped or functionalized materials, or heterostructures. Based on first-principles calculations, LaCl and LaBr monolayer and bulk forms, which were fabricated in 1980s (Mattausch et al 1980 Z. Anorg. Allg. Chem. 466 7-22 Araujo and Corbett 1981 Inorg. Chem. 20 3082-6), are both revealed to exhibit intrinsic 2D/3D quantum anomalous Hall effect with energy gaps up to 36 meV. These simple binary compounds are also revealed to be ferromagnets with high Curie temperature, which guarantees that the quantum anomalous Hall effect survives at ambient condictions. Besides holding promise for low-dissipation electronics and quantum computing, this proposal realizes 3D quantum anomalous Hall effect.
Quantum anomalous Hall effect in stanene on a nonmagnetic substrate
Zhang, Huisheng; Zhou, Tong; Zhang, Jiayong; Zhao, Bao; Yao, Yugui; Yang, Zhongqin
2016-12-01
Since the quantum anomalous Hall (QAH) effect was realized in magnetic topological insulators, research on the effect has become a hot topic. The very harsh realizing requirements of the effect in experiments, however, hinder its practical applications. Based on ab initio methods, we find that nonmagnetic Pb I2 films are ideal substrates for the two-dimensional honeycomb stanene. The QAH effect with a pretty large band gap (up to 90 meV) can be achieved in the functionalized stanene /Pb I2 heterostructure. Despite van der Waals interactions in the heterostructure, band inversions are found to be happening between Sn (s and px ,y ) and Pb (px ,y) orbitals, playing a key role in determining the nontrivial topology and the large band gap of the system. Having no magnetic atoms is imperative to triggering the QAH effect. A very stable rudimentary device having QAH effects is proposed based on the Sn /Pb I2 heterostructure. Our results demonstrate that QAH effects can be easily realized in the Sn /Pb I2 heterostructures in experiments.
Anomalous Hall effect of heavy holes in Ⅲ-Ⅴ semiconductor quantum wells
Institute of Scientific and Technical Information of China (English)
Wang Zhi-Gang; Zhang Ping
2007-01-01
The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first-order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin-orbit splitting.
Magnetic Topological Insulators and Quantum Anomalous Hall Effect
Kou, Xufeng
The engineering of topological surface states is a key to realize applicable devices based on topological insulators (TIs). Among various proposals, introducing magnetic impurities into TIs has been proven to be an effective way to open a surface gap and integrate additional ferromagnetism with the original topological order. In this Dissertation, we study both the intrinsic electrical and magnetic properties of the magnetic TI thin films grown by molecular beam epitaxy. By doping transition element Cr into the host tetradymite-type V-VI semiconductors, we achieve robust ferromagnetic order with a strong perpendicular magnetic anisotropy. With additional top-gating capability, we realize the electric-field-controlled ferromagnetism in the magnetic TI systems, and demonstrate such magneto-electric effects can be effectively manipulated, depending on the interplays between the band topology, magnetic exchange coupling, and structural engineering. Most significantly, we report the observation of quantum anomalous Hall effect (QAHE) in the Cr-doped (BiSb)2Te3 samples where dissipationless chiral edge conduction is realized in the macroscopic millimeter-size devices without the presence of any external magnetic field, and the stability of the quantized Hall conductance of e2/h is well-maintained as the film thickness varies across the 2D hybridization limit. With additional quantum confinement, we discover the metal-to-insulator switching between two opposite QAHE states, and reveal the universal QAHE phase diagram in the thin magnetic TI samples. In addition to the uniform magnetic TIs, we further investigate the TI/Cr-doped TI bilayer structures prepared by the modulation-doped growth method. By controlling the magnetic interaction profile, we observe the Dirac hole-mediated ferromagnetism and develop an effective way to manipulate its strength. Besides, the giant spin-orbit torque in such magnetic TI-based heterostructures enables us to demonstrate the current
Horava-Lifshitz Gravity and Effective Theory of the Fractional Quantum Hall Effect
Wu, Chaolun
2014-01-01
We show that Horava-Lifshitz gravity theory can be employed as a covariant framework to build an effective field theory for the fractional quantum Hall effect that respects all the spacetime symmetries such as non-relativistic diffeomorphism invariance and anisotropic Weyl invariance as well as the gauge symmetry. The key to this formalism is a set of correspondence relations that maps all the field degrees of freedom in the Horava-Lifshitz gravity theory to external background (source) fields among others in the effective action of the quantum Hall effect, according to their symmetry transformation properties. We originally derive the map as a holographic dictionary, but its form is independent of the existence of holographic duality. This paves the way for the application of Horava-Lifshitz holography on fractional quantum Hall effect. Using the simplest holographic Chern-Simons model, we compute the low energy effective action at leading orders and show that it captures universal electromagnetic and geomet...
Robust quantum anomalous Hall effect in ferromagnetic transition metal halides
Huang, Chengxi; Wu, Haiping; Deng, Kaiming; Jena, Puru; Kan, Erjun
2016-01-01
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb)2Te3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that RuI3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360 K using Monte-Carlo simulation, is above room temperature and higher than most of two-dimensional ferromagnetic thin films. We also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our wor...
Quantum anomalous Hall effect in ferromagnetic transition metal halides
Huang, Chengxi; Zhou, Jian; Wu, Haiping; Deng, Kaiming; Jena, Puru; Kan, Erjun
2017-01-01
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb ) 2T e3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that the Ru I3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ˜360 K using Monte Carlo simulation, is above room temperature and higher than most two-dimensional ferromagnetic thin films. The inclusion of Hubbard U in the Ru-d electrons does not affect this result. We also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds an experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.
Understanding the physics of a possible non-Abelian fractional quantum hall effect state.
Energy Technology Data Exchange (ETDEWEB)
Pan, Wei; Crawford, Matthew; Tallakulam, Madhu; Ross, Anthony Joseph, III
2010-10-01
We wish to present in this report experimental results from a one-year Senior Council Tier-1 LDRD project that focused on understanding the physics of a possible non-Abelian fractional quantum Hall effect state. We first give a general introduction to the quantum Hall effect, and then present the experimental results on the edge-state transport in a special fractional quantum Hall effect state at Landau level filling {nu} = 5/2 - a possible non-Abelian quantum Hall state. This state has been at the center of current basic research due to its potential applications in fault-resistant topological quantum computation. We will also describe the semiconductor 'Hall-bar' devices we used in this project. Electron physics in low dimensional systems has been one of the most exciting fields in condensed matter physics for many years. This is especially true of quantum Hall effect (QHE) physics, which has seen its intellectual wealth applied in and has influenced many seemingly unrelated fields, such as the black hole physics, where a fractional QHE-like phase has been identified. Two Nobel prizes have been awarded for discoveries of quantum Hall effects: in 1985 to von Klitzing for the discovery of integer QHE, and in 1998 to Tsui, Stormer, and Laughlin for the discovery of fractional QHE. Today, QH physics remains one of the most vibrant research fields, and many unexpected novel quantum states continue to be discovered and to surprise us, such as utilizing an exotic, non-Abelian FQHE state at {nu} = 5/2 for fault resistant topological computation. Below we give a briefly introduction of the quantum Hall physics.
Quantum Hall effect, Quillen metric and holomorphic anomaly
Klevtsov, Semyon; Marinescu, George; Wiegmann, Paul
2015-01-01
We study the generating functional, the adiabatic curvature and the adiabatic phase for the integer quantum Hall effect (QHE) on a compact Riemann surface. For the generating functional we derive its asymptotic expansion for the large flux of the magnetic field, i.e., for the large degree k of the positive Hermitian line bundle $L^k$. The expansion consists of the anomalous and exact terms. The anomalous terms are the leading terms of the expansion. This part is responsible for the quantization of the adiabatic transport coefficients in QHE. We then identify the anomalous part of the expansion with the Quillen metric on the determinant line bundle, and the subleading exact part with the asymptotics of the regularized spectral determinant of the Laplacian for the line bundle $L^k$, at large k. Finally, we show how the generating functional of the integer QHE is related to the gauge and gravitational (2+1)d Chern-Simons functionals. We observe the relation between the Bismut-Gillet-Soul\\'e curvature formula for...
Emergence and mechanism in the fractional quantum Hall effect
Bain, Jonathan
2016-11-01
For some authors, an adequate notion of emergence must include an account of a mechanism by means of which emergent behavior is realized. This appeal to mechanism is problematic in the case of the fractional quantum Hall effect (FQHE). There is a consensus among physicists that the FQHE exhibits emergent phenomena, but there are at least four alternative explanations of the latter that, arguably, appeal to ontologically distinct mechanisms, both at the microphysics level and at the level of general organizing principles. In light of this underdetermination of mechanism, one is faced with the following options: (I) deny that emergence is present in the FQHE; (II) argue for the priority of one mechanistic explanation over the others; or (III) temper the desire for a mechanism-centric account of emergence. I will argue that there are good reasons to reject (I) and (II) and accept (III). In particular, I will suggest that a law-centric account of emergence does just fine in explaining the emergent phenomena associated with the FQHE.
Fuzzy spaces, the M(atrix) model and the quantum Hall effect
Karabali, D; Randjbar-Daemi, S; Karabali, Dimitra
2004-01-01
This is a short review of recent work on fuzzy spaces in their relation to the M(atrix) theory and the quantum Hall effect. We give an introduction to fuzzy spaces and how the limit of large matrices is obtained. The complex projective spaces ${\\bf CP}^k$, and to a lesser extent spheres, are considered. Quantum Hall effect and the behavior of edge excitations of a droplet of fermions on these spaces and their relation to fuzzy spaces are also discussed.
Theory of the integer quantum Hall effect in graphene
Energy Technology Data Exchange (ETDEWEB)
Toyoda, Tadashi, E-mail: toyoda@keyaki.cc.u-tokai.ac.jp [Department of Physics, Tokai University, 4-1-1 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292 (Japan); Zhang, Chao, E-mail: czhang@uow.edu.au [School of Engineering Physics, University of Wollongong, Wollongong NSW 2522 (Australia)
2012-01-09
A Hall resistivity formula for the 2DES in graphene is derived from the zero-mass Dirac field model adopting the electron reservoir hypothesis. The formula reproduces perfectly the experimental resistivity data [K.S. Novoselov, et al., Nature 438 (2005) 201]. This perfect agreement cannot be achieved by any other existing models. The electron reservoir is shown to be the 2DES itself. -- Highlights: ► Quantum Hall resistivity formula is derived from the zero-mass Dirac model. ► The formula agrees with the graphene experiment perfectly. ► No existing theories can explain the experiment quantitatively. ► The electron reservoir hypothesis is adopted. ► Mechanism of the electron reservoir is clarified for the first time.
Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
Diankov, Georgi; Liang, Chi-Te; Amet, François; Gallagher, Patrick; Lee, Menyoung; Bestwick, Andrew J.; Tharratt, Kevin; Coniglio, William; Jaroszynski, Jan; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David
2016-12-01
The fractional quantum Hall effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle-hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle-hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.
Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene.
Diankov, Georgi; Liang, Chi-Te; Amet, François; Gallagher, Patrick; Lee, Menyoung; Bestwick, Andrew J; Tharratt, Kevin; Coniglio, William; Jaroszynski, Jan; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David
2016-12-21
The fractional quantum Hall effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle-hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.
Cabo-Montes de Oca, Alejandro
2002-01-01
It is shown how the electromagnetic response of 2DEG under Quantum Hall Effect regime, characterized by the Chern-Simons topological action, transforms the sample impurities and defects in charge-reservoirs that stabilize the Hall conductivity plateaus. The results determine the basic dynamical origin of the singular properties of localization under the occurrence of the Quantum Hall Effect obtained in the pioneering works of Laughlin and of Joynt and Prange, by means of a gauge invariance argument and a purely electronic analysis, respectively. The common intuitive picture of electrons moving along the equipotential lines gets an analytical realization through the Chern-Simons current and charge densities.
From magnetically doped topological insulator to the quantum anomalous Hall effect
Institute of Scientific and Technical Information of China (English)
He Ke; Ma Xu-Cun; Chen Xi; Lü Li; Wang Ya-Yu; Xue Qi-Kun
2013-01-01
Quantum Hall effect (QHE),as a class of quantum phenomena that occur in macroscopic scale,is one of the most important topics in condensed matter physics.It has long been expected that QHE may occur without Landau levels so that neither extemal magnetic field nor high sample mobility is required for its study and application.Such a QHE free of Landau levels,can appear in topological insulators (TIs) with ferromagnetism as the quantized version of the anomalous Hall effect,i.e.,quantum anomalous Hall (QAH) effect.Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs.With molecular beam epitaxy,we prepare thin films of Cr-doped (Bi,Sb)2Te3 TIs with wellcontrolled chemical potential and long-range ferromagnetic order that can survive the insulating phase.In such thin films,we eventually observed the quantization of the Hall resistance at h/e2 at zero field,accompanied by a considerable drop in the longitudinal resistance.Under a strong magnetic field,the longitudinal resistance vanishes,whereas the Hall resistance remains at the quantized value.The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs,and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.
Framing anomaly in the effective theory of the fractional quantum Hall effect.
Gromov, Andrey; Cho, Gil Young; You, Yizhi; Abanov, Alexander G; Fradkin, Eduardo
2015-01-09
We consider the geometric part of the effective action for the fractional quantum Hall effect (FQHE). It is shown that accounting for the framing anomaly of the quantum Chern-Simons theory is essential to obtain the correct gravitational linear response functions. In the lowest order in gradients, the linear response generating functional includes Chern-Simons, Wen-Zee, and gravitational Chern-Simons terms. The latter term has a contribution from the framing anomaly which fixes the value of thermal Hall conductivity and contributes to the Hall viscosity of the FQH states on a sphere. We also discuss the effects of the framing anomaly on linear responses for non-Abelian FQH states.
Generalized Surface Polaritons and their quantum spin Hall effect
Xu, Yadong; Chen, Huanyang
2016-01-01
Surface polaritons, e.g., surface plasmon polaritons, are invaluable tools in nanophotonics. However, considerable plasmon loss narrows the application regime of plasmonic devices. Here we reveal some general conditions for lossless surface polaritons to emerge at the interface of a gain and a loss media. The gain medium does not only compensate the energy loss, but also modifies surface wave oscillation mechanisms. A new type of surface polaritons induced by the sign switch of the imaginary part of the permittivity across the interface is discovered. The surface polaritons exhibit spin Hall effect due to spin-momentum locking and unique Berry phase. The spin Hall coefficient changes the sign across the parity-time symmetric limit and becomes quantized for perfect metal-dielectric interface and for dielectric-dielectric interface with very large permittivity contrast, carrying opposite topological numbers. Our study opens a new direction for manipulating light with surface polaritons in non-Hermitian optical ...
Quantum anomalous Hall effect and tunable topological states in 3d transition metals doped silicene.
Zhang, Xiao-Long; Liu, Lan-Feng; Liu, Wu-Ming
2013-10-09
Silicene is an intriguing 2D topological material which is closely analogous to graphene but with stronger spin orbit coupling effect and natural compatibility with current silicon-based electronics industry. Here we demonstrate that silicene decorated with certain 3d transition metals (Vanadium) can sustain a stable quantum anomalous Hall effect using both analytical model and first-principles Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our findings provide new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states which are highly desirable for future nanoelectronics and spintronics application.
Institute of Scientific and Technical Information of China (English)
Song Hong-Zhou; Zhang Ping; Duan Su-Qing; Zhao Xian-Geng
2006-01-01
We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin-orbit coupling.
Non relativistic diffeomorphism and the geometry of the fractional quantum Hall effect
Banerjee, Rabin
2015-01-01
We show that our recently proposed method\\cite{BMM1,BMM2,BMM3,BM4} of constructing nonrelativistic diffeomorphism invariant field theories by gauging the Galilean symmetry provides a natural connection with the geometry of the fractional quantum Hall effect (FQHE). Specifically, the covariant derivative that appears on gauging, exactly reproduces the form that yields the Hall viscosity and Wen-Zee shift \\cite{CYF}.
Parity effect of bipolar quantum Hall edge transport around graphene antidots.
Matsuo, Sadashige; Nakaharai, Shu; Komatsu, Katsuyoshi; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke
2015-06-30
Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.
The role of the spin connection in quantum Hall effect: A perspective from geometric quantization
Karabali, Dimitra
2016-01-01
The topological terms of the bulk effective action for the integer quantum Hall effect, capturing the dynamics of gauge and gravitational fluctuations, reveal a curiosity, namely, the Abelian potential for the magnetic field appears in a particular combination with the Abelian spin connection. This seems to hold for quantum Hall effect on complex projective spaces of arbitrary dimensions. An interpretation of this in terms of the algebra of symplectic transformations is given. This can also be viewed in terms of the metaplectic correction in geometric quantization.
Gate Bias Effects on Samples with Edge Gates in the Quantum Hall Regime
若林 淳一; 風間 重雄; 長嶋 登志夫
2001-01-01
We have fabricated GaAs/AlGaAs heterostructure Hall samples that have edge gate with several widths along both sides of the sample. The gate width dependence of an effect of the gate voltage to the Hall resistance was measured at the middle of a transition region between the adjacent quantum Hall plateaus. The results have been analyzed based on two model functions of current distribution;an exponential type and the modified Beenakker type. The results of the former have shown qualitative agr...
Yu, H. L.; Jiang, C.; Zhai, Z. Y.
2017-01-01
We investigate numerically the integer quantum Hall effect in a three-band triangular-lattice model. The three bands own the Chern number C=2,-1,-1, respectively. The lowest topological flat band carrying Chern number C=2, which leads to the Hall plateau σH = 2 (e2 / h) . This Hall plateau is sensitive to the disorder scattering and is rapidly destroyed by the weak disorder. Further increasing the strength of disorder, the gap of density of states always disappears before the vanishing of the corresponding Hall plateau. The scaling behavior of quantum phase transition between an insulator and a quantum Hall plateau is studied. We find that the insulator-plateau transition becomes sharper with increasing the size of system. Due to the different of edge states, the critical energy Ec1 gradually shifts to the center of Hall plateau while Ec2 is unaffected with increasing the disorder strength.
Quantum Hall effect in black phosphorus two-dimensional electron system.
Li, Likai; Yang, Fangyuan; Ye, Guo Jun; Zhang, Zuocheng; Zhu, Zengwei; Lou, Wenkai; Zhou, Xiaoying; Li, Liang; Watanabe, Kenji; Taniguchi, Takashi; Chang, Kai; Wang, Yayu; Chen, Xian Hui; Zhang, Yuanbo
2016-07-01
The development of new, high-quality functional materials has been at the forefront of condensed-matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the materials base of two-dimensional electron systems (2DESs). Here, we report the observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES. The high quality is achieved by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES and brings the carrier Hall mobility up to 6,000 cm(2) V(-1) s(-1). The exceptional mobility enabled us to observe the quantum Hall effect and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.
Quantum Hall effect in higher dimensions, matrix models and fuzzy geometry
Energy Technology Data Exchange (ETDEWEB)
Karabali, D [Department of Physics and Astronomy, Lehman College of the CUNY, Bronx, NY 10468 (United States); Nair, V P [Physics Department, City College of the CUNY, New York, NY 10031 (United States)
2006-10-13
We give a brief review of the quantum Hall effect in higher dimensions and its relation to fuzzy spaces. For a quantum Hall system, the lowest Landau level dynamics is given by a one-dimensional matrix action whose large N limit produces an effective action describing the gauge interactions of a higher dimensional quantum Hall droplet. The bulk action is a Chern-Simons type term whose anomaly is exactly cancelled by the boundary action given in terms of a chiral, gauged Wess-Zumino-Witten theory suitably generalized to higher dimensions. We argue that the gauge fields in the Chern-Simons action can be understood as parametrizing the different ways in which the large N limit of the matrix theory is taken. The possible relevance of these ideas to fuzzy gravity is explained. Other applications are also briefly discussed.
Analytic calculations of trial wave functions of the fractional quantum Hall effect on the sphere
Energy Technology Data Exchange (ETDEWEB)
Souza Batista, C.L. de [Centro Brasileiro de Pesquisas Fisicas (CBPF), Rio de Janeiro, RJ (Brazil); Dingping Li [Perugia Univ. (Italy). Dipt. di Fisica
1996-07-01
We present a framework for the analytic calculations of the hierarchical wave functions and the composite fermion wave functions in the fractional quantum Hall effect on the sphere by using projective coordinates. Then we calculate the overlaps between these two wave functions at various fillings and small numbers of electrons. We find that the overlaps are most equal to one. This gives a further evidence that two theories of the fractional quantum Hall effect, the hierarchical theory, are physically equivalent. (author). 31 refs., 2 tabs.
The Fractional Statistics of Generalized Haldane Wave Function in 4D Quantum Hall Effect
Institute of Scientific and Technical Information of China (English)
WANGKe-Lin; WANShao-Long; CHENQing; XUFei
2003-01-01
Recently, a generalization of Laughlin's wave function expressed in Haldane's spherical geometry is con-structed in 4D quantum Hall effect. In fact, it is a membrane wave function in CP3 space. In this article, we use non-Abelian Berry phase to anaJyze the statistics of this membrane wave function. Our results show that the membrane wave function obeys fractional statistics. It is the rare example to realize fractional statistics in higher-dimensiona space than 2D. And, it will help to make clear the unresolved problems in 4D quantum Hall effect.
The Fractional Statistics of Generalized Haldane Wave Function in 4D Quantum Hall Effect
Institute of Scientific and Technical Information of China (English)
XU Fei; WANG Ke-Lin; WAN Shao-Long; CHEN Qing
2003-01-01
Recently, a generalization of Laughlin's wave function expressed in Haldane's spherical geometry is con-structed in 4D quantum Hall effect. In fact, it is a membrane wave function in CP3 space. In this article, we usenon-Abelian Berry phase to analyze the statistics of this membrane wave function. Our results show that the membranewave function obeys fractional statistics. It is the rare example to realize fractional statistics in higher-dimensional spacethan 2D. And, it will help to make clear the unresolved problems in 4D quantum Hall effect.
Effects of Landau level mixing on the fractional quantum Hall effect in monolayer graphene.
Peterson, Michael R; Nayak, Chetan
2014-08-22
We report results of exact diagonalization studies of the spin- and valley-polarized fractional quantum Hall effect in the N = 0 and N = 1 Landau levels in graphene. We use an effective model that incorporates Landau level mixing to lowest order in the parameter κ = ((e(2)/εℓ)/(ħv(F)/ℓ)) = (e(2)/εv(F)ħ), which is magnetic field independent and can only be varied through the choice of substrate. We find Landau level mixing effects are negligible in the N = 0 Landau level for κ ≲ 2. In fact, the lowest Landau level projected Coulomb Hamiltonian is a better approximation to the real Hamiltonian for graphene than it is for semiconductor based quantum wells. Consequently, the principal fractional quantum Hall states are expected in the N = 0 Landau level over this range of κ. In the N = 1 Landau level, fractional quantum Hall states are expected for a smaller range of κ and Landau level mixing strongly breaks particle-hole symmetry, producing qualitatively different results compared to the N = 0 Landau level. At half filling of the N = 1 Landau level, we predict the anti-Pfaffian state will occur for κ ∼ 0.25-0.75.
Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect
Yang, M.; Couturaud, O.; Desrat, W.; Consejo, C.; Kazazis, D.; Yakimova, R.; Syväjärvi, M.; Goiran, M.; Béard, J.; Frings, P.; Pierre, M.; Cresti, A.; Escoffier, W.; Jouault, B.
2016-12-01
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν =2 quantized plateau appears from fields B ≃5 T and persists up to B ≃80 T . At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1 /B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.
Quantum diagrammatic theory of the extrinsic spin Hall effect in graphene
Milletarı, Mirco; Ferreira, Aires
2016-10-01
We present a rigorous microscopic theory of the extrinsic spin Hall effect in disordered graphene based on a nonperturbative quantum diagrammatic treatment incorporating skew scattering and anomalous (impurity-concentration-independent) quantum corrections on equal footing. The leading skew-scattering contribution to the spin Hall conductivity is shown to quantitatively agree with Boltzmann transport theory over a wide range of parameters. Our self-consistent approach, where all topologically equivalent noncrossing diagrams are resummed, unveils that the skewness generated by spin-orbit-active impurities deeply influences the anomalous component of the spin Hall conductivity, even in the weak-scattering regime. This seemingly counterintuitive result is explained by the rich sublattice structure of scattering potentials in graphene, for which traditional Gaussian disorder approximations fail to capture the intricate correlations between skew scattering and side jumps generated through diffusion. Finally, we assess the role of quantum interference corrections by evaluating an important subclass of crossing diagrams recently considered in the context of the anomalous Hall effect, the X and Ψ diagrams [A. Ado et al., Europhys. Lett. 111, 37004 (2015), 10.1209/0295-5075/111/37004]. We show that Ψ diagrams, encoding quantum coherent skew scattering, display a strong Fermi energy dependence, dominating the anomalous spin Hall component away from the Dirac point. Our findings have direct implications for nonlocal transport experiments in spin-orbit-coupled graphene systems.
A Unifying Conformal Field Theory Approach to the Quantum Hall Effect
Cristofano, Gerardo; Maiella, Giuseppe; Marotta, Vincenzo; Naddeo, Adele; Niccoli, Giuliano
2005-01-01
We review the main results of the effective description of the Quantum Hall fluid for the Jain fillings, nu=m/2pm+1, and the non-standard ones nu=m/pm+2 by a conformal field theory (CFT) in two dimensions. It is stressed the unifying character of the m-reduction procedure to construct appropriate twisted CFT models, called Twisted Models (TM), which by construction reproduce the Quantum Hall topological properties at those fillings. Indeed for the Jain plateaux we find that the different desc...
A novel method of including Landau level mixing in numerical studies of the quantum Hall effect
Energy Technology Data Exchange (ETDEWEB)
Wooten, Rachel; Quinn, John; Macek, Joseph [Department of Physics and Astronomy, University of Tennessee, Knoxville TN 37996-1501 (United States)
2013-12-04
Landau level mixing should influence the quantum Hall effect for all except the strongest applied magnetic fields. We propose a simple method for examining the effects of Landau level mixing by incorporating multiple Landau levels into the Haldane pseudopotentials through exact numerical diagonalization. Some of the resulting pseudopotentials for the lowest and first excited Landau levels will be presented.
Realizing Tao-Thouless-like state in fractional quantum spin Hall effect
Liu, Chen-Rong; Guo, Yao-Wu; Li, Zhuo-Jun; Li, Wei; Chen, Yan
2016-09-01
The quest for exotic quantum states of matter has become one of the most challenging tasks in modern condensed matter communications. Interplay between topology and strong electron-electron interactions leads to lots of fascinating effects since the discovery of the fractional quantum Hall effect. Here, we theoretically study the Rashba-type spin-orbit coupling effect on a fractional quantum spin Hall system by means of finite size exact diagonalization. Numerical evidences from the ground degeneracies, states evolutions, entanglement spectra, and static structure factor calculations demonstrate that non-trivial fractional topological Tao-Thouless-like quantum state can be realized in the fractional quantum spin Hall effect in a thin torus geometric structure by tuning the strength of spin-orbit coupling. Furthermore, the experimental realization of the Tao-Thouless-like state as well as its evolution in optical lattices are also proposed. The importance of this prediction provides significant insight into the realization of exotic topological quantum states in optical lattice, and also opens a route for exploring the exotic quantum states in condensed matters in future.
Realizing Tao-Thouless-like state in fractional quantum spin Hall effect.
Liu, Chen-Rong; Guo, Yao-Wu; Li, Zhuo-Jun; Li, Wei; Chen, Yan
2016-09-21
The quest for exotic quantum states of matter has become one of the most challenging tasks in modern condensed matter communications. Interplay between topology and strong electron-electron interactions leads to lots of fascinating effects since the discovery of the fractional quantum Hall effect. Here, we theoretically study the Rashba-type spin-orbit coupling effect on a fractional quantum spin Hall system by means of finite size exact diagonalization. Numerical evidences from the ground degeneracies, states evolutions, entanglement spectra, and static structure factor calculations demonstrate that non-trivial fractional topological Tao-Thouless-like quantum state can be realized in the fractional quantum spin Hall effect in a thin torus geometric structure by tuning the strength of spin-orbit coupling. Furthermore, the experimental realization of the Tao-Thouless-like state as well as its evolution in optical lattices are also proposed. The importance of this prediction provides significant insight into the realization of exotic topological quantum states in optical lattice, and also opens a route for exploring the exotic quantum states in condensed matters in future.
Effective-field-theory model for the fractional quantum Hall effect
Zhang, S. C.; Hansson, T. H.; Kivelson, S.
1989-01-01
Starting directly from the microscopic Hamiltonian, a field-theory model is derived for the fractional quantum Hall effect. By considering an approximate coarse-grained version of the same model, a Landau-Ginzburg theory similar to that of Girvin (1986) is constructed. The partition function of the model exhibits cusps as a function of density. It is shown that the collective density fluctuations are massive.
Quantum spin Hall effect in α -Sn /CdTe(001 ) quantum-well structures
Küfner, Sebastian; Matthes, Lars; Bechstedt, Friedhelm
2016-01-01
The electronic and topological properties of heterovalent and heterocrystalline α -Sn/CdTe(001) quantum wells (QWs) are studied in dependence on the thickness of α -Sn by means of ab initio calculations. We calculate the topological Z2 invariants of the respective bulk crystals, which identify α -Sn as strong three-dimensional (3D) topological insulators (TIs), whereas CdTe is a trivial insulator. We predict the existence of two-dimensional (2D) topological interface states between both materials and show that a topological phase transition from a trivial insulating phase into the quantum spin Hall (QSH) phase in the QW structures occurs at much higher thicknesses than in the HgTe case. The QSH effect is characterized by the localization, dispersion, and spin polarization of the topological interface states. We address the distinction of the 3D and 2D TI characters of the studied QW structures, which is inevitable for an understanding of the underlying quantum state of matter. The 3D TI nature is characterized by two-dimensional topological interface states, while the 2D phase exhibits one-dimensional edge states. The two different state characteristics are often intermixed in the discussion of the topology of 2D QW structures, especially, the comparison of ab initio calculations and experimental transport studies.
An Alternative Formulation of Hall Effect and Quantum Phases in Noncommutative Space
Dayi, O F
2010-01-01
A recent method of constructing quantum mechanics in noncommutative coordinates alternative to imply noncommutativity by means of star product or the equivalent coordinate shift is discussed. The formulation is based on introducing some generalized theta-deformed commutation relations among quantum phase space variables and providing their realizations. Each realization furnishes us with a diverse theta-deformation. This procedure is suitable to consider theta-deformation of matrix observables which may be even coordinate independent. Within this alternative approach we give a formulation of Hall effect in noncommutative coordinates and calculate the deformed Hall conductivities for the realizations adopted. Before presenting our formulation of the theta-deformed quantum phases we discussed in a unified manner the existing formulations of quantum phases in noncommutative coordinates. The theta-deformed Aharonov-Bohm, Aharonov-Casher, He-McKellar-Wilkens and Anandan phases which we obtain are not velocity depe...
Interaction-Driven Spontaneous Quantum Hall Effect on a Kagome Lattice
Zhu, W.; Gong, Shou-Shu; Zeng, Tian-Sheng; Fu, Liang; Sheng, D. N.
2016-08-01
Topological states of matter have been widely studied as being driven by an external magnetic field, intrinsic spin-orbital coupling, or magnetic doping. Here, we unveil an interaction-driven spontaneous quantum Hall effect (a Chern insulator) emerging in an extended fermion-Hubbard model on a kagome lattice, based on a state-of-the-art density-matrix renormalization group on cylinder geometry and an exact diagonalization in torus geometry. We first demonstrate that the proposed model exhibits an incompressible liquid phase with doublet degenerate ground states as time-reversal partners. The explicit spontaneous time-reversal symmetry breaking is determined by emergent uniform circulating loop currents between nearest neighbors. Importantly, the fingerprint topological nature of the ground state is characterized by quantized Hall conductance. Thus, we identify the liquid phase as a quantum Hall phase, which provides a "proof-of-principle" demonstration of the interaction-driven topological phase in a topologically trivial noninteracting band.
Interaction-Driven Spontaneous Quantum Hall Effect on a Kagome Lattice.
Zhu, W; Gong, Shou-Shu; Zeng, Tian-Sheng; Fu, Liang; Sheng, D N
2016-08-26
Topological states of matter have been widely studied as being driven by an external magnetic field, intrinsic spin-orbital coupling, or magnetic doping. Here, we unveil an interaction-driven spontaneous quantum Hall effect (a Chern insulator) emerging in an extended fermion-Hubbard model on a kagome lattice, based on a state-of-the-art density-matrix renormalization group on cylinder geometry and an exact diagonalization in torus geometry. We first demonstrate that the proposed model exhibits an incompressible liquid phase with doublet degenerate ground states as time-reversal partners. The explicit spontaneous time-reversal symmetry breaking is determined by emergent uniform circulating loop currents between nearest neighbors. Importantly, the fingerprint topological nature of the ground state is characterized by quantized Hall conductance. Thus, we identify the liquid phase as a quantum Hall phase, which provides a "proof-of-principle" demonstration of the interaction-driven topological phase in a topologically trivial noninteracting band.
Prediction of near-room-temperature quantum anomalous Hall effect on honeycomb materials.
Wu, Shu-Chun; Shan, Guangcun; Yan, Binghai
2014-12-19
Recently, the long-sough quantum anomalous Hall effect was realized in a magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on ab initio band structure calculations, we propose a quantum anomalous Hall platform with a large energy gap of 0.34 and 0.06 eV on honeycomb lattices comprised of Sn and Ge, respectively. The ferromagnetic (FM) order forms in one sublattice of the honeycomb structure by controlling the surface functionalization rather than dilute magnetic doping, which is expected to be visualized by spin polarized STM in experiment. Strong coupling between the inherent quantum spin Hall state and ferromagnetism results in considerable exchange splitting and, consequently, an FM insulator with a large energy gap. The estimated mean-field Curie temperature is 243 and 509 K for Sn and Ge lattices, respectively. The large energy gap and high Curie temperature indicate the feasibility of the quantum anomalous Hall effect in the near-room-temperature and even room-temperature regions.
Quantum transport in graphene Hall bars: Effects of vacancy disorder
Petrović, M. D.; Peeters, F. M.
2016-12-01
Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks the graphene sublattice symmetry and creates states localized on the vacancies. These states are observable in the bend resistance, as well as in the total DOS. Their energy is proportional to the square root of the magnetic field, while their localization length is proportional to the cyclotron radius. At the energies of these localized states, the electron current flows around the monovacancies and, as we show, it can follow unexpected paths depending on the particular arrangement of vacancies. We study how these localized states change with the vacancy concentration, and what are the effects of including the next-nearest-neighbor hopping term. Our results are also compared with the situation when double vacancies are present in the system. Double vacancies also induce localized states, but their energy and magnetic field dependencies are different. Their localization energy scales linearly with the magnetic field, and their localization length appears not to depend on the field strength.
Analogue of the quantum Hall effect for neutral particles with magnetic dipole moment
Ribeiro, L. R.; Passos, E.; Furtado, C.; Sergeenkov, S.
2017-03-01
In this paper we investigate a possibility for the existence of an analog of the Quantum Hall Effect for neutral particles with a permanent magnetic moment μ in the presence of crossed inhomogeneous magnetic and electric fields. We predict the appearance of Hall conductivity σH = (e2 / h) ν (μ) with the Landau filling factor ν (μ) ∝μ2. The estimates of the model parameters suggest quite an optimistic possibility to experimentally verify this prediction in optically trapped clouds of atomic BEC.
Observation of the quantum Hall effect in δ-doped SrTiO3.
Matsubara, Y; Takahashi, K S; Bahramy, M S; Kozuka, Y; Maryenko, D; Falson, J; Tsukazaki, A; Tokura, Y; Kawasaki, M
2016-05-27
The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems.
Kawamura, Minoru; Yoshimi, Ryutaro; Tsukazaki, Atsushi; Takahashi, Kei S.; Kawasaki, Masashi; Tokura, Yoshinori
2017-07-01
The instability of the quantum anomalous Hall (QAH) effect has been studied as a function of the electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that the Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 μ m . The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.
Theory of the integer quantum Hall effect in graphene
Toyoda, Tadashi; Zhang, Chao
2012-01-01
A Hall resistivity formula for the 2DES in graphene is derived from the zero-mass Dirac field model adopting the electron reservoir hypothesis. The formula reproduces perfectly the experimental resistivity data [K.S. Novoselov, et al., Nature 438 (2005) 201]. This perfect agreement cannot be achieved by any other existing models. The electron reservoir is shown to be the 2DES itself.
Devil's Staircase Phase Diagram of the Fractional Quantum Hall Effect in the Thin-Torus Limit
Rotondo, Pietro; Molinari, Luca Guido; Ratti, Piergiorgio; Gherardi, Marco
2016-06-01
After more than three decades, the fractional quantum Hall effect still poses challenges to contemporary physics. Recent experiments point toward a fractal scenario for the Hall resistivity as a function of the magnetic field. Here, we consider the so-called thin-torus limit of the Hamiltonian describing interacting electrons in a strong magnetic field, restricted to the lowest Landau level, and we show that it can be mapped onto a one-dimensional lattice gas with repulsive interactions, with the magnetic field playing the role of the chemical potential. The statistical mechanics of such models leads us to interpret the sequence of Hall plateaux as a fractal phase diagram whose landscape shows a qualitative agreement with experiments.
A unified theory of quantum Hall effect and high temperature superconductivity
Fujita, Shigeji; Suzuki, Akira
2014-03-01
The quantum Hall effect (QHE) and high temperature superconductivity (HTSC) have remarkable common features. They occur only in two-dimensional (2D) solids. The critical temperature Tc of some HTSC exceeds 160K while the room temperature QHE is observed in graphene. The cause of both QHE and HTSC is the phonon exchange attraction. We develop a theoretical model for the QHE in terms of the composite bosons (fermions), each containing an electron and an odd (even) number of fluxons (magnetic flux quanta). The composite particles (boson, fermion) are bound by the phonon exchange attraction. If the Bose-Einstein condensation (BEC) of the composite (c)- bosons occurs, then the system exhibits zero resistivity and the associated Hall conductivity plateau. The Hall conductivity is calculated rigorously without averaging. The mystery of the fractional charge carried by the c-bosons is resolved in our model.
Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction
Zhang, Yan
2015-05-08
Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
Fractional Quantum Hall Effect via Holography Chern-Simons, Edge States, and Hierarchy
Fujita, Mitsutoshi; Ryu, Shinsei; Takayanagi, Tadashi
2009-01-01
We present three holographic constructions of fractional quantum Hall effect (FQHE) via string theory. The first model studies edge states in FQHE using supersymmetric domain walls in N=6 Chern-Simons theory. We show that D4-branes wrapped on CP^1 or D8-branes wrapped on CP^3 create edge states that shift the rank or the level of the gauge group, respectively. These holographic edge states correctly reproduce the Hall conductivity. The second model presents a holographic dual to the pure U(N)_k (Yang-Mills-)Chern-Simons theory based on a D3-D7 system. Its holography is equivalent to the level-rank duality, which enables us to compute the Hall conductivity and the topological entanglement entropy. The third model introduces the first string theory embedding of hierarchical FQHEs, using IIA string on C^2/Z_n.
The Geometry of Quantum Hall Effect: An Effective Action for all Dimensions
Karabali, Dimitra
2016-01-01
We present a general formula for the topological part of the effective action for quantum Hall systems in higher dimensions, including fluctuations of the gauge field and metric around background fields of a specified topological class. The result is based on a procedure of integrating up from the Dolbeault index density which applies for the degeneracies of Landau levels, combined with some input from the standard descent procedure for anomalies. Features of the topological action in (2+1), (4+1), (6+1) dimensions, including the contribution due to gravitational anomalies, are discussed in some detail.
Energy Technology Data Exchange (ETDEWEB)
Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R., E-mail: rafaelp@yandex.ru; Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V. [Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation); Mikhailov, N. N.; Dvoretsky, S. A. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
2015-12-15
The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.
Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators.
Chang, Cui-Zu; Li, Mingda
2016-03-31
The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity σ(yx) = e2/h without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. In this topical review, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.
Dynamical picture of spin Hall effect based on quantum spin vorticity theory
Directory of Open Access Journals (Sweden)
Masahiro Fukuda
2016-02-01
Full Text Available It is proposed that the dynamical picture of the spin Hall effect can be explained as the generation of the spin vorticity by the applied electric field on the basis of the “quantum spin vorticity theory”, which describes the equation of motion of local spin and the vorticity of spin in the framework of quantum field theory. Similarly, it is proposed that the dynamical picture of the inverse spin Hall effect can be explained as the acceleration of the electron by the rotation of the spin torque density as driving force accompanying the generation of the spin vorticity. These explanations may help us to understand spin phenomena in condensed matter and molecular systems from a unified viewpoint.
Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene.
Ki, Dong-Keun; Fal'ko, Vladimir I; Abanin, Dmitry A; Morpurgo, Alberto F
2014-01-01
We investigate low-temperature magneto-transport in recently developed, high-quality multiterminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance with a concomitant dip in longitudinal resistance or incipient, and exhibit only a longitudinal resistance minimum. All observed states scale as a function of filling factor ν, as expected. An unprecedented even-denominator fractional state is observed at ν = -1/2 on the hole side, exhibiting a clear plateau in Rxy quantized at the expected value of 2h/e(2) with a precision of ∼0.5%. Many of our observations, together with a recent electronic compressibility measurement performed in graphene bilayers on hexagonal boron-nitride (hBN) substrates, are consistent with a recent theory that accounts for the effect of the degeneracy between the N = 0 and N = 1 Landau levels in the fractional quantum Hall effect and predicts the occurrence of a Moore-Read type ν = -1/2 state. Owing to the experimental flexibility of bilayer graphene, which has a gate-dependent band structure, can be easily accessed by scanning probes, and can be contacted with materials such as superconductors, our findings offer new possibilities to explore the microscopic nature of even-denominator fractional quantum Hall effect.
Specific heat in the second Landau level fractional quantum Hall effect
Schmidt, B. A.; Bennaceur, K.; Gaucher, S.; Gervais, G.; Pfeiffer, L. N.; West, K. W.
2016-01-01
Specific heat has had an important role in the study of superfluidity and superconductivity, and could provide important information on the fractional quantum Hall effect as well. However, tra- ditional measurements of the specific heat of a two-dimensional electron gas are difficult due to the large background contribution of the phonon bath, even at very low temperatures. Here, we report measurements of the specific heat per electron of a single two-dimensional electron gas with no contribu...
Anomalous Quantum Hall Effect of 4D Graphene in Background Fields
Drissi, L B; Saidi, E H
2011-01-01
Bori\\c{c}i-Creutz (BC) model describing the dynamics of light quarks in lattice QCD has been shown to be intimately linked to the four dimensional extension of 2D graphene refereed below to as four dimensional graphene (4D- graphene). Borrowing ideas from the field theory description of the usual 2D graphene, we study in this paper the anomalous quantum Hall effect (AQHE) of the BC fermions in presence of a constant background electromagnetic field strength F_{{\\mu}{\
Yue, Z.; Raikh, M. E.
2016-09-01
The Quantum anomalous Hall (QAH) effect in the films with nontrivial band structure accompanies the ferromagnetic transition in the system of magnetic dopants. Experimentally, the QAH transition manifests itself as a jump in the dependence of longitudinal resistivity on a weak external magnetic field. Microscopically, this jump originates from the emergence of a chiral edge mode on one side of the ferromagnetic transition. We study analytically the effect of an extended confinement on the structure of the edge modes. We employ the simplest model of the extended confinement in the form of a potential step next to the hard wall. It is shown that, unlike the conventional quantum Hall effect, where all edge channels are chiral, in the QAH effect, a complex structure of the boundary leads to nonchiral edge modes which are present on both sides of the ferromagnetic transition. Wave functions of nonchiral modes are different above and below the transition: on the "topological" side, where the chiral edge mode is supported, nonchiral modes are "repelled" from the boundary; i.e., they are much less localized than on the "trivial" side. Thus, the disorder-induced scattering into these modes will boost the extension of the chiral edge mode. The prime experimental manifestation of nonchiral modes is that, by contributing to longitudinal resistance, they smear the QAH transition.
Murthy, Ganpathy
2001-11-01
A microscopic Hamiltonian theory of the fractional quantum Hall effect developed by Shankar and the present author based on the fermionic Chern-Simons approach has recently been quite successful in calculating gaps and finite-tempertature properties in fractional quantum Hall states. Initially proposed as a small-q theory, it was subsequently extended by Shankar to form an algebraically consistent theory for all q in the lowest Landau level. Such a theory is amenable to a conserving approximation in which the constraints have vanishing correlators and decouple from physical response functions. Properties of the incompressible fractions are explored in this conserving approximation, including the magnetoexciton dispersions and the evolution of the small-q structure factor as ν-->12. Finally, a formalism capable of dealing with a nonuniform ground-state charge density is developed and used to show how the correct fractional value of the quasiparticle charge emerges from the theory.
Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-01-25
The electronic properties of silicene are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that the combination of an electric field with intrinsic spin orbit interaction leads to quantum phase transitions at the charge neutrality point, providing a tool to experimentally tune the topological state. Silicene constitutes a model system for exploring the spin and valley physics not accessible in graphene due to the small spin orbit interaction.
Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru
2016-06-07
Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.
Non-abelian fractional quantum hall effect for fault-resistant topological quantum computation.
Energy Technology Data Exchange (ETDEWEB)
Pan, Wei; Thalakulam, Madhu; Shi, Xiaoyan; Crawford, Matthew; Nielsen, Erik; Cederberg, Jeffrey George
2013-10-01
Topological quantum computation (TQC) has emerged as one of the most promising approaches to quantum computation. Under this approach, the topological properties of a non-Abelian quantum system, which are insensitive to local perturbations, are utilized to process and transport quantum information. The encoded information can be protected and rendered immune from nearly all environmental decoherence processes without additional error-correction. It is believed that the low energy excitations of the so-called =5/2 fractional quantum Hall (FQH) state may obey non-Abelian statistics. Our goal is to explore this novel FQH state and to understand and create a scientific foundation of this quantum matter state for the emerging TQC technology. We present in this report the results from a coherent study that focused on obtaining a knowledge base of the physics that underpins TQC. We first present the results of bulk transport properties, including the nature of disorder on the 5/2 state and spin transitions in the second Landau level. We then describe the development and application of edge tunneling techniques to quantify and understand the quasiparticle physics of the 5/2 state.
Field effect in the quantum Hall regime of a high mobility graphene wire
Energy Technology Data Exchange (ETDEWEB)
Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
2014-08-21
In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.
Field effect in the quantum Hall regime of a high mobility graphene wire
Barraud, C.; Choi, T.; Butti, P.; Shorubalko, I.; Taniguchi, T.; Watanabe, K.; Ihn, T.; Ensslin, K.
2014-08-01
In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.
Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator
Energy Technology Data Exchange (ETDEWEB)
Feng, Yang; Feng, Xiao; Ou, Yunbo; Wang, Jing; Liu, Chang; Zhang, Liguo; Zhao, Dongyang; Jiang, Gaoyuan; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu
2015-09-16
We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.
Jain states in a matrix theory of the quantum Hall effect
Energy Technology Data Exchange (ETDEWEB)
Cappelli, Andrea [I.N.F.N. and Dipartimento di Fisica, Via G. Sansone 1, 50019 Sesto Fiorentino, Florence (Italy); Rodriguez, Ivan D. [I.N.F.N. and Dipartimento di Fisica, Via G. Sansone 1, 50019 Sesto Fiorentino, Florence (Italy)
2006-12-15
The U(N) Maxwell-Chern-Simons matrix gauge theory is proposed as an extension of Susskind's noncommutative approach. The theory describes D0-branes, nonrelativistic particles with matrix coordinates and gauge symmetry, that realize a matrix generalization of the quantum Hall effect. Matrix ground states obtained by suitable projections of higher Landau levels are found to be in one-to-one correspondence with the expected Laughlin and Jain hierarchical states. The Jain composite-fermion construction follows by gauge invariance via the Gauss law constraint. In the limit of commuting, 'normal' matrices the theory reduces to eigenvalue coordinates that describe realistic electrons with Calogero interaction. The Maxwell-Chern-Simons matrix theory improves earlier noncommutative approaches and could provide another effective theory of the fractional Hall effect.
Circuit models and SPICE macro-models for quantum Hall effect devices
Ortolano, Massimo
2015-01-01
Quantum Hall effect (QHE) devices are a pillar of modern quantum electrical metrology. Electrical networks including one or more QHE elements can be used as quantum resistance and impedance standards. The analysis of these networks allows metrologists to evaluate the effect of the inevitable parasitic parameters on their performance as standards. This paper presents a systematic analysis of the various circuit models for QHE elements proposed in the literature, and the development of a new model. This last model is particularly suited to be employed with the analogue electronic circuit simulator SPICE. The SPICE macro-model and examples of SPICE simulations, validated by comparison with the corresponding analytical solution and/or experimental data, are provided.
Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2
Tahir, M.
2014-09-22
We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.
Quantum spin Hall effect in rutile-based oxide multilayers
Lado, Jose L.; Guterding, Daniel; Barone, Paolo; Valentí, Roser; Pardo, Victor
2016-12-01
Dirac points in two-dimensional electronic structures are a source for topological electronic states due to the ±π Berry phase that they sustain. Here we show that two rutile multilayers [namely (WO2)2/(ZrO2)n and (PtO2)2/(ZrO2)n ], where an active bilayer is sandwiched by a thick enough (n =6 is sufficient) band insulating substrate, show semimetallic Dirac dispersions with a total of four Dirac cones along the Γ -M direction. These become gapped upon the introduction of spin-orbit coupling, giving rise to an insulating ground state comprising four edge states. We discuss the origin of the lack of topological protection in terms of the valley spin-Chern numbers and the multiplicity of Dirac points. We show with a model Hamiltonian that mirror-symmetry breaking would be capable of creating a quantum phase transition to a strong topological insulator, with a single Kramers pair per edge.
Institute of Scientific and Technical Information of China (English)
Ren Ji-Rong; Zhu Hui
2009-01-01
An unconventional integer quantum Hall regime was found in magnetic semiconductor-superconductor hybrids.By making use of the decomposition of the gauge potential on a U(1) principal fibre bundle over k-space, we study the topological structure of the integral Hall conductance. It is labeled by the Hopf index β and the Brouwer degree η. The Hall conductance topological current and its evolution is discussed.
Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.
Zhang, Xu-Long; Xu, Lei; Zhang, Jun
2017-05-10
Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.
Hatke, A. T.; Liu, Yang; Engel, L. W.; Pfeiffer, L. N.; West, K. W.; Baldwin, K. W.; Shayegan, M.
2017-01-01
We have studied the microwave spectra of a wide quantum well for Landau level fillings, ν , just below 1/2, under conditions where the ν =1 /2 fractional quantum Hall effect (FQHE) is present. One resonance in the spectra exhibits intensity variations with ν in striking agreement with that expected for a pinning mode of a Wigner solid of quasiholes of this FQHE state. This resonance is also quite sensitive to asymmetrization of the growth-direction charge distribution in the quantum well by gate bias. Another resonance in the spectra is associated with a different bilayer Wigner solid that also exists at much lower ν than the 1/2 FQHE, and that appears to coexist with the 1/2 quasihole solid.
Hwang, Kyusung; Kim, Yong Baek
2016-07-15
We theoretically investigate emergent quantum phases in the thin film geometries of the pyrochore iridates, where a number of exotic quantum ground states are proposed to occur in bulk materials as a result of the interplay between electron correlation and strong spin-orbit coupling. The fate of these bulk phases as well as novel quantum states that may arise only in the thin film platforms, are studied via a theoretical model that allows layer-dependent magnetic structures. It is found that the magnetic order develop in inhomogeneous fashions in the thin film geometries. This leads to a variety of magnetic metal phases with modulated magnetic ordering patterns across different layers. Both the bulk and boundary electronic states in these phases conspire to promote unusual electronic properties. In particular, such phases are akin to the Weyl semimetal phase in the bulk system and they would exhibit an unusually large anomalous Hall effect.
Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
Alexander-Webber, J. A.; Baker, A. M. R.; Janssen, T. J. B. M.; Tzalenchuk, A.; Lara-Avila, S.; Kubatkin, S.; Yakimova, R.; Piot, B. A.; Maude, D. K.; Nicholas, R. J.
2013-08-01
We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and Tc∝B2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.
The enigma of the ν =2 +3 /8 fractional quantum Hall effect
Hutasoit, Jimmy A.; Balram, Ajit C.; Mukherjee, Sutirtha; Wu, Ying-Hai; Mandal, Sudhansu S.; Wójs, A.; Cheianov, Vadim; Jain, J. K.
2017-03-01
The fractional quantum Hall effect at ν =2 +3 /8 , which has been definitively observed, is one of the last fractions for which no viable explanation has so far been demonstrated. Our detailed study suggests that it belongs to a new class of exotic states described by the Bonderson-Slingerland wave function. Its excitations are non-Abelian anyons similar to those of the well studied Pfaffian state at 5/2, but its wave function has a more complex structure. Using the effective edge theory, we make predictions for various measurable quantities that should enable a confirmation of the underlying topological order of this state.
Higher dimensional quantum Hall effect as A-class topological insulator
Directory of Open Access Journals (Sweden)
Kazuki Hasebe
2014-09-01
Full Text Available We perform a detail study of higher dimensional quantum Hall effects and A-class topological insulators with emphasis on their relations to non-commutative geometry. There are two different formulations of non-commutative geometry for higher dimensional fuzzy spheres: the ordinary commutator formulation and quantum Nambu bracket formulation. Corresponding to these formulations, we introduce two kinds of monopole gauge fields: non-abelian gauge field and antisymmetric tensor gauge field, which respectively realize the non-commutative geometry of fuzzy sphere in the lowest Landau level. We establish connection between the two types of monopole gauge fields through Chern–Simons term, and derive explicit form of tensor monopole gauge fields with higher string-like singularity. The connection between two types of monopole is applied to generalize the concept of flux attachment in quantum Hall effect to A-class topological insulator. We propose tensor type Chern–Simons theory as the effective field theory for membranes in A-class topological insulators. Membranes turn out to be fractionally charged objects and the phase entanglement mediated by tensor gauge field transforms the membrane statistics to be anyonic. The index theorem supports the dimensional hierarchy of A-class topological insulator. Analogies to D-brane physics of string theory are discussed too.
Higher dimensional quantum Hall effect as A-class topological insulator
Energy Technology Data Exchange (ETDEWEB)
Hasebe, Kazuki, E-mail: khasebe@stanford.edu
2014-09-15
We perform a detail study of higher dimensional quantum Hall effects and A-class topological insulators with emphasis on their relations to non-commutative geometry. There are two different formulations of non-commutative geometry for higher dimensional fuzzy spheres: the ordinary commutator formulation and quantum Nambu bracket formulation. Corresponding to these formulations, we introduce two kinds of monopole gauge fields: non-abelian gauge field and antisymmetric tensor gauge field, which respectively realize the non-commutative geometry of fuzzy sphere in the lowest Landau level. We establish connection between the two types of monopole gauge fields through Chern–Simons term, and derive explicit form of tensor monopole gauge fields with higher string-like singularity. The connection between two types of monopole is applied to generalize the concept of flux attachment in quantum Hall effect to A-class topological insulator. We propose tensor type Chern–Simons theory as the effective field theory for membranes in A-class topological insulators. Membranes turn out to be fractionally charged objects and the phase entanglement mediated by tensor gauge field transforms the membrane statistics to be anyonic. The index theorem supports the dimensional hierarchy of A-class topological insulator. Analogies to D-brane physics of string theory are discussed too.
Temperature dependence of the spin polarization in the fractional quantum Hall effects
Murthy, Ganpathy
2000-01-01
Using a Hamiltonian formulation of Composite Fermions that I recently developed with R. Shankar, I compute the dependence of the spin polarization on the temperature for the translationally invariant fractional quantum Hall states at $\
Scrutinizing Hall Effect in Mn1 -xFex Si : Fermi Surface Evolution and Hidden Quantum Criticality
Glushkov, V. V.; Lobanova, I. I.; Ivanov, V. Yu.; Voronov, V. V.; Dyadkin, V. A.; Chubova, N. M.; Grigoriev, S. V.; Demishev, S. V.
2015-12-01
Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic phase of Mn1 -xFex Si reveals an ordinary Hall effect sign inversion associated with the hidden quantum critical (QC) point x*˜0.11 . The effective hole doping at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions, and QC phenomena in Mn1 -xFex Si . The change of electron and hole concentrations is considered as a "driving force" for tuning the QC regime in Mn1 -xFex Si via modifying the Ruderman-Kittel-Kasuya-Yosida exchange interaction within the Heisenberg model of magnetism.
Correlated Electrons in Two Dimensions: The Fractional Quantum Hall Effect and More
Eisenstein, James
2014-03-01
A collection of electrons confined to move on a plane surface is surely one of the simplest many-body systems imaginable. But in spite of this apparent simplicity, a strong magnetic field applied perpendicular to the plane opens a door to a complex and beautiful world filled with many-body exotica. The magnetic field quenches the kinetic energy, leaving Coulomb interactions in control of the physics. The result has been a revolution in many-body physics comparable to that created by the discovery of superconductivity. Incompressible liquid ground states with fractionally charged quasiparticle excitations exhibit the quantized Hall effect at numerous discrete partial fillings of the lowest and first excited Landau level. The first examples of topological condensed matter, these many-body bulk insulators possess complex families of both conducting and neutral edge states at their boundaries. Highly correlated compressible phases of composite fermions also exist and may be viewed as progenitors of the various families of incompressible states. Multi-component two-dimensional systems with active discrete internal degrees of freedom (spin, layer, valley, etc.) display a wide array of broken symmetry states including ferromagnetism and exciton condensation. Now thirty years old, the field generically dubbed ``the fractional quantum Hall effect,'' remains extraordinarily vibrant. Once confined largely to GaAs/AlGaAs heterostructures, the fractional quantum Hall effect and its many relatives and offspring are now pursued in graphene, various oxide interfaces, and other materials. Some of the most fundamental aspects, including the exotic non-abelian quasiparticle statistics expected of some of the more subtle phases, have hardly been touched experimentally even as their potential for applications to quantum computation is alluring. In this talk, I will try to give a flavor of this enormous field, emphasizing current topics and possible future directions.
The metal-insulator transition of the half integer quantum-Hall effect in epitaxial graphene
Neal, Adam; Shen, Tian; Gu, Jiangjiang; Xu, Min; Bolen, Michael; Capano, Michael; Engel, Lloyd; Ye, Peide
2010-03-01
The observation of the half integer quantum-Hall effect (QHE) in Hall resistance along with the pronounced Shubnikov-de Haas (SdH) oscillations confirms that the electrical properties of epitaxial graphene on SiC share the same relativistic physics as those in exfoliated graphene films. The temperature-dependent half-width δB(T) of the SdH peaks and the maximum of the slope of the Hall resistance ρxy/B of gated epitaxial graphene are investigated at temperatures between 0.4 K to 300K. The preliminary data shows δB(T) for the first Laudau level of electrons in epitaxial graphene on SiC (0001) display a power-law behavior with a scaling exponent κ 0.43, being consistent with the previously reported results from 2DES formed at AlGaAs/GaAs or InGaAs/InP heterojunctions [1,2] and the exfoliated graphene [3]. More detailed results on κ for high Laudau levels and the study of size-dependence of the quantum-Hall plateau-plateau transition in epitaxial graphene will also be presented. [1] H.P. Wei, D.C. Tsui, M.A. Paalanen, and A.M.M. Pruisken, Phys. Rev. Lett. 61, 1294 (1988). [2] S. Koch, R.J. Haug, K. von Klitzing, and K. Ploog, Phys. Rev. Lett. 67, 883 (1991). [3] A.J.M. Giesbers, U. Zeitler, L.A. Ponomarenko, R. Yang, K.S. Novoselov, A.K. Geim, and J.C. Maan, arXiv:0908.0461v1.
3D Higher spin gravity and the fractional quantum Hall effect
Valenzuela, Mauricio
2016-01-01
This article is based on the talk "Fractional Spin Gravity" presented in the 31st International Colloquium on Group Theoretical Methods in Physics, Rio de Janeiro, 19-25th June 2016. There we emphasised an implication of the works [1,2] by N. Boulanger, P. Sundell and the author on fractional spin extensions of 2+1D higher spin gravity. This is that higher spin gravity may govern interactions of pseudo-particles excitations in the (fractional) quantum Hall effect. More generally, fractional spin currents in 2+1D source higher spin gravity curvatures.
The Branch Process of Skyrmions in the Fractional Quantum Hall Effect
Institute of Scientific and Technical Information of China (English)
DUAN Yi-Shi; ZHANG Xiu-Ming; TIAN Miao
2005-01-01
@@ The branch process of the skyrmions in the fractional quantum Hall effect is studied from the φ-mapping topo logical current. It is shown that there exists a field ζ whose Hopf indices and Brouwer degrees characterize thetopological structure of the skyrmions. Based on the bifurcation theory of the φ-mapping theory, it is found that the skyrmions can be generated or annihilated at the limit points and they encounter, split or merge at the bifurcation points of the new field ζ.
High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators.
Qi, Shifei; Qiao, Zhenhua; Deng, Xinzhou; Cubuk, Ekin D; Chen, Hua; Zhu, Wenguang; Kaxiras, Efthimios; Zhang, S B; Xu, Xiaohong; Zhang, Zhenyu
2016-07-29
The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and it promises to have immense application potential in future dissipationless quantum electronics. Here, we present a novel kinetic pathway to realize the QAHE at high temperatures by n-p codoping of three-dimensional topological insulators. We provide a proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb_{2}Te_{3} and demonstrate that, strikingly, even at low concentrations of ∼2% V and ∼1% I, the system exhibits a quantized Hall conductance, the telltale hallmark of QAHE, at temperatures of at least ∼50 K, which is 3 orders of magnitude higher than the typical temperatures at which it has been realized to date. The underlying physical factor enabling this dramatic improvement is tied to the largely preserved intrinsic band gap of the host system upon compensated n-p codoping. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.
Bliokh, Konstantin Y
2011-01-01
We consider the relativistic deformation of quantum waves and mechanical bodies carrying intrinsic angular momentum (AM). When observed in a moving reference frame, the centroid of the object undergoes an AM-dependent transverse shift. This is the relativistic analogue of the spin Hall effect, which occurs in free space without any external fields. Remarkably, the shifts of the geometric and energy centroids differ by a factor of 2, and both centroids are crucial for the correct Lorentz transformations of the AM tensor. We examine manifestations of the relativistic Hall effect in quantum vortices, mechanical flywheel, and discuss various fundamental aspects of the phenomenon. The perfect agreement of quantum and relativistic approaches allows applications at strikingly different scales: from elementary spinning particles, through classical light, to rotating black-holes.
Nakagawa, Takahiro; Akera, Hiroshi; Suzuura, Hidekatsu
2005-06-01
Spatial variations of the electron temperature are calculated in the linear-response regime in a quantum Hall system with a potential discontinuity in the current direction. It is shown that the sign of the induced deviation of the electron temperature from the lattice temperature exhibits quantum oscillations.
Heating process in the pre-Breakdown regime of the Quantum Hall Efect : a size dependent effect
Meziani, Y. M.; Chaubet, C.; Jouault, B; Bonifacie, S.; Raymond, A; Poirier, W; Piquemal, F.
2003-01-01
Our study presents experimental measurements of the contact and longitudinal voltage drops in Hall bars, as a function of the current amplitude. We are interested in the heating phenomenon which takes place before the breakdown of the quantum Hall effect, i.e. the pre-breakdown regime. Two types of samples has been investigated, at low temperature (4.2 and 1.5K) and high magnetic field (up to 13 T). The Hall bars have several different widths, and our observations clearly demonstrate that the...
The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells
Institute of Scientific and Technical Information of China (English)
Guo Huai-Ming; Zhang Xiang-Lin; Feng Shi-Ping
2012-01-01
The quantum spin Hall effect (QSHE) was first realized in HgTe quantum wells (QWs),which remain the only known two-dimensional topological insulator so far.In this paper,we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE.We start with the case of constant mass with random distributions,and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small.When the number is infinite and corresponds to the real fluctuation,we find that the QSHE is not only robust,but also can be generated by relatively strong fluctuation.Our results imply that the thickness fluctuation does not cause backscattering,and the QSHE is robust to it.
Edge reconstructions in fractional quantum Hall systems.
Joglekar, Yogesh; Nguyen, Hoang; Murthy, Ganpathy
2003-03-01
Two dimensional electron systems exhibiting fractional quantum Hall effects are characterized by a quantized Hall conductance and a dissipationless bulk. The transport in these systems occurs only at the edges where gapless excitations are possible [1]. We present a microscopic calculation of these egde-states at filling factors ν=1/3 and ν=2/5 using the Hamiltonian theory of the fractional quantum Hall effect [2]. We find that the quantum Hall egde undergoes a reconstruction as the confining potential, produced by the background charge density, softens [3,4]. Our results have implications to the tunneling experiments into the edge of a fractional quantum Hall system [5]. 1: X. G.Wen, Phys. Rev. Lett. 64, 2206 (1990). 2: R. Shankar and G. Murthy, Phys. Rev. Lett. 79, 4437 (1997). 3: C. de C. Chamon and X. G. Wen, Phys. Rev. B 49, 8227 (1994). 4: X. Wan, K. Yang, and E. H. Razayi, Phys. Rev. Lett. 88, 056802 (2002). 5: A.M.Chang et al., Phys. Rev. Lett. 86, 143 (2000).
Spin and Isospin: Exotic Order in Quantum Hall Ferromagnets
Girvin, Steven M.
Quantum mechanics is a strange business, and the quantum physics of strongly correlated many-electron systems can be stranger still. Good examples are the various quantum Hall effects. They are among the most remarkable many-body quantum phenomena discovered in the second half of the 20th century, comparable in intellectual import to superconductivity and superfluidity. The quantum Hall effects are an extremely rich set of phenomena with deep and truly fundamental theoretical implications...
A Unifying Conformal Field Theory Approach to the Quantum Hall Effect
Cristofano, G; Marotta, V; Naddeo, A; Niccoli, G; Cristofano, Gerardo; Maiella, Giuseppe; Marotta, Vincenzo; Naddeo, Adele; Niccoli, Giuliano
2005-01-01
We review the main results of the effective description of the Quantum Hall fluid for the Jain fillings, nu=m/2pm+1, and the non-standard ones nu=m/pm+2 by a conformal field theory (CFT) in two dimensions. It is stressed the unifying character of the m-reduction procedure to construct appropriate twisted CFT models, called Twisted Models (TM), which by construction reproduce the Quantum Hall topological properties at those fillings. Indeed for the Jain plateaux we find that the different descriptions given in the literature fall into different sectors of the TM for the torus topology. Other interesting aspects are explicitly seen for the m=2 non standard filling nu=1/p+1 (the pairing case) as the merging of non-Abelian statistics or the instability of the TM model (c=2) versus the Moore-Read one (c=3/2). Furthermore by using Boundary CFT techniques the presence of localized impurities and/or dissipation is shown to be closely connected with the twisted sector of the TM, whose presence assures the consistency ...
Localization Exponent for the Second Landau Level in the Quantum Hall Effect
Institute of Scientific and Technical Information of China (English)
TU Tao; ZHAO Yong-Jie; HAO Xiao-Jie; WANG Cheng-You; GUO Guang-Can; GUO Guo-Ping
2008-01-01
@@ At temperature above 1 K,we measured the temperature dependence of the longitudinal and Hall resistivity ρxx,ρxy in the regime of the quantum Hall plateau-to-platean transitions.The localization exponent v is extracted with an approach based on the variable range hopping theory.We find the quantity v≈2.3 at the second Landau level,which is proven to be accurately universal.
Quantum spin Hall effect in a square-lattice model under a uniform magnetic field
Institute of Scientific and Technical Information of China (English)
Guo Huai-Ming; Feng Shi-Ping
2012-01-01
We study a toy square-lattice model under a uniform magnetic field.Using the Landauer-Büttiker formula,we calculate the transport properties of the system on a two-terminal,a four-terminal and a six-terminal device.We find that the quantum spin Hall (QSH) effect appears in energy ranges where the spin-up and spin-down subsystems have different filling factors.We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus.These results provide an example of the QSH effect with a physical origin other than time-reversal (TR) preserving spin-orbit coupling (SOC).
M-Theory Brane as Giant Graviton and the Fractional Quantum Hall Effect
Huo, R
2006-01-01
A small number of M-theory branes as giant gravitons in the M-theory sector of LLM geometry is studied as a probe. The abelian way shows that the low energy effective action for M-theory brane is exactly the 2d electron subject to a vertical magnetic field. We also briefly discuss the microscopic description of M2-brane giant graviton in this geometry, in the language of a combination of D0-branes as fuzzy 2-spheres. Then we go to the well-established Noncommutative Chern-Simons theory description. After quantization, well behaved Fractional Quantum Hall Effect is demonstrated. This goes beyond the original LLM description and should be some indication of novel geometry.
Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
Directory of Open Access Journals (Sweden)
E. A. Henriksen
2012-01-01
Full Text Available The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed.
Yakovenko, Victor M.; Goan, Hsi-Sheng
1996-12-01
This paper reviews recent developments in the theory of the quantum Hall effect (QHE) in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional organic conductors (TMTSF)2X. The origin and the basic features of the FISDW are reviewed. The QHE in the pinned FISDW state is derived in several simple, transparent ways, including the edge states formulation of the problem. The temperature dependence of the Hall conductivity is found to be the same as the temperature dependence of the Fröhlich current. It is shown that, when the FISDW is free to move, it produces an additional contribution to the Hall conductivity that nullifies the total Hall effect. The paper is written on mathematically simple level, emphasizes physical meaning over sophisticated mathematical technique, and uses inductive, rather than deductive, reasoning.
Directory of Open Access Journals (Sweden)
Yu.A. Kruglyak
2015-12-01
Full Text Available Spin transport with the NEGF method in the spinor representation, in particular, spin valve, rotating magnetic contacts, spin precession and rotating spins, Zeeman and Rashba spin Hamiltonians, quantum spin Hall effect, calculation the spin potential, and four-component description of transport are discussed in the frame of the «bottom – up» approach of modern nanoelectronics.
Energy Technology Data Exchange (ETDEWEB)
Schlottmann, P. [Department of Physics, Florida State University, MC 4350-309 Keene Building, Tallahassee, FL 32306 (United States)]. E-mail: schlottm@martech.fsu.edu
2004-12-31
The nesting of the Fermi surfaces of an electron pocket and a hole pocket separated by a wave vector Q and the interaction between electrons gives rise to spin- and charge-density waves. The order can gradually be suppressed by mismatching the nesting and a quantum critical point is obtained as the critical temperature tends to zero. We calculate the quasi-particle damping close to the quantum critical point and discuss its consequences on the resistivity and Hall effect.
Evidence for a fractional fractal quantum Hall effect in graphene superlattices
Wang, Lei; Gao, Yuanda; Wen, Bo; Han, Zheng; Taniguchi, Takashi; Watanabe, Kenji; Koshino, Mikito; Hone, James; Dean, Cory R.
2015-12-01
The Hofstadter energy spectrum provides a uniquely tunable system to study emergent topological order in the regime of strong interactions. Previous experiments, however, have been limited to low Bloch band fillings where only the Landau level index plays a role. We report measurements of high-mobility graphene superlattices where the complete unit cell of the Hofstadter spectrum is accessible. We observed coexistence of conventional fractional quantum Hall effect (QHE) states together with the integer QHE states associated with the fractal Hofstadter spectrum. At large magnetic field, we observed signatures of another series of states, which appeared at fractional Bloch filling index. These fractional Bloch band QHE states are not anticipated by existing theoretical pictures and point toward a distinct type of many-body state.
Central charge from adiabatic transport of cusp singularities in the quantum Hall effect
Can, Tankut
2017-04-01
We study quantum Hall (QH) states on a punctured Riemann sphere. We compute the Berry curvature under adiabatic motion in the moduli space in the large N limit. The Berry curvature is shown to be finite in the large N limit and controlled by the conformal dimension of the cusp singularity, a local property of the mean density. Utilizing exact sum rules obtained from a Ward identity, we show that for the Laughlin wave function, the dimension of a cusp singularity is given by the central charge, a robust geometric response coefficient in the QHE. Thus, adiabatic transport of curvature singularities can be used to determine the central charge of QH states. We also consider the effects of threaded fluxes and spin-deformed wave functions. Finally, we give a closed expression for all moments of the mean density in the integer QH state on a punctured disk.
Central charge from adiabatic transport of cusp singularities in the quantum Hall effect
Can, Tankut
2016-01-01
We study quantum Hall (QH) states on a punctured Riemann sphere. We compute the Berry curvature under adiabatic motion in the moduli space in the large N limit. The Berry curvature is shown to be finite in the large N limit and controlled by the conformal dimension of the cusp singularity, a local property of the mean density. Utilizing exact sum rules obtained from a Ward identity, we show that for the Laughlin wave function, the dimension of a cusp singularity is given by the central charge, a robust geometric response coefficient in the QHE. Thus, adiabatic transport of curvature singularities can be used to determine the central charge of QH states. We also consider the effects of threaded fluxes and spin-deformed wave functions. Finally, we give a closed expression for all moments of the mean density in the integer QH state on a punctured disk.
Quantum Hall Effect on the Grassmannians $\\mathbf{Gr}_2(\\mathbb{C}^N)$
Balli, F; Kurkcuoglu, S; Unal, G
2014-01-01
Quantum Hall Effects (QHEs) on the complex Grassmann manifolds $\\mathbf{Gr}_2(\\mathbb{C}^N)$ are formulated. We set up the Landau problem in $\\mathbf{Gr}_2(\\mathbb{C}^N)$ and solve it using group theoretical techniques and provide the energy spectrum and the eigenstates in terms of the $SU(N)$ Wigner ${\\cal D}$-functions for charged particles on $\\mathbf{Gr}_2(\\mathbb{C}^N)$ under the influence of abelian and non-abelian background magnetic monopoles or a combination of these thereof. In particular, for the simplest case of $\\mathbf{Gr}_2(\\mathbb{C}^4)$ we explicitly write down the $U(1)$ background gauge field as well as the single and many-particle eigenstates by introducing the Pl\\"{u}cker coordinates and show by calculating the two-point correlation function that the Lowest Landau Level (LLL) at filling factor $\
Fermion-Parity Anomaly of the Critical Supercurrent in the Quantum Spin-Hall Effect
Beenakker, C. W. J.; Pikulin, D. I.; Hyart, T.; Schomerus, H.; Dahlhaus, J. P.
2013-01-01
The helical edge state of a quantum spin-Hall insulator can carry a supercurrent in equilibrium between two superconducting electrodes (separation L, coherence length ξ). We calculate the maximum (critical) current Ic that can flow without dissipation along a single edge, going beyond the short-junction restriction L≪ξ of earlier work, and find a dependence on the fermion parity of the ground state when L becomes larger than ξ. Fermion-parity conservation doubles the critical current in the low-temperature, long-junction limit, while for a short junction Ic is the same with or without parity constraints. This provides a phase-insensitive, dc signature of the 4π-periodic Josephson effect.
Hu, Jun; Zhu, Zhenyue; Wu, Ruqian
2015-03-11
New topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) are a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped (Bi,Sb)2Te3 at extremely low temperature. Therefore, it is important to find new materials with large topological band gap and high thermal stability for the realization of the QAHE. On the basis of first-principles and tight-binding model calculations, we discovered a new class of topological phase, Chern half metal, which manifests the QAHE in one spin channel while is metallic in the other spin channel, in Co or Rh deposited graphene. The QAHE is robust in these sytems for the adatom coverage ranging from 2% to 6%. Meanwhile, these systems have large perpendicular magnetic anisotropy energies of 5.3 and 11.5 meV, necessary for the observation of the QAHE at reasonably high temperature.
Method of computation of energies in the fractional quantum Hall effect regime
Directory of Open Access Journals (Sweden)
M.A. Ammar
2016-09-01
Full Text Available In a previous work, we reported exact results of energies of the ground state in the fractional quantum Hall effect (FQHE regime for systems with up to N_{e}=6 electrons at the filling factor ν=1/3 by using the method of complex polar coordinates. In this work, we display interesting computational details of the previous calculation and extend the calculation to N_{e}=7 electrons at ν=1/3. Moreover, similar exact results are derived at the filling ν=1/5 for systems with up to N_{e}=6 electrons. The results that we obtained by analytical calculation are in good agreement with their analogues ones derived by the method of Monte Carlo in a precedent work.
Quenching of the quantum Hall effect in graphene with scrolled edges.
Cresti, Alessandro; Fogler, Michael M; Guinea, Francisco; Castro Neto, A H; Roche, Stephan
2012-04-20
Edge nanoscrolls are shown to strongly influence transport properties of suspended graphene in the quantum Hall regime. The relatively long arclength of the scrolls in combination with their compact transverse size results in formation of many nonchiral transport channels in the scrolls. They short circuit the bulk current paths and inhibit the observation of the quantized two-terminal resistance. Unlike competing theoretical proposals, this mechanism of disrupting the Hall quantization in suspended graphene is not caused by ill-chosen placement of the contacts, singular elastic strains, or a small sample size.
Realizing and detecting the quantum Hall effect without landau levels by using ultracold atoms.
Shao, L B; Zhu, Shi-Liang; Sheng, L; Xing, D Y; Wang, Z D
2008-12-12
We design an ingenious scheme to realize Haldane's quantum Hall model without Landau levels by using ultracold atoms trapped in an optical lattice. Three standing-wave laser beams are used to construct a wanted honeycomb lattice, where different on site energies in two sublattices required in the model can be implemented through tuning the phase of one laser beam. The staggered magnetic field is generated from the light-induced Berry phase. Moreover, we establish a relation between the Hall conductivity and the atomic density, enabling us to detect the Chern number with the typical density-profile-measurement technique.
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V.; Kumar, Roshan Krishna; Gorbachev, Roman V.; Kudrynskyi, Zakhar R.; Pezzini, Sergio; Kovalyuk, Zakhar D.; Zeitler, Uli; Novoselov, Konstantin S.; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V.; Fal'Ko, Vladimir I.; Geim, Andre K.; Cao, Yang
2016-11-01
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 cm2 V‑1 s‑1 and 104 cm2 V‑1 s‑1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.
Electric Fields in the 5/2 fractional quantum Hall effect
Tylan-Tyler, Anthony; Lyanda-Geller, Yuli
The potential for non-Abelian quasiholes in the 5/2 fractional quantum Hall effect makes the state of interest theoretically and experimentally. The presence of such features in the ground state of the system would allow for the implementation of a topological quantum computation scheme. In order to probe the system for these features, a small measuring voltage, i.e. an electric field, is applied. In Corbino geometries, these electric fields are applied radially. This breaks the Galilean invariance, which in an infinite planar geometry allows us to transform to a moving frame of reference, eliminating the electric field. To study the effects of these fields, we carry out exact diagonalization calculations in a disk geometry. We find that application of small fields can lead to an improvement in the overlap with the Moore-Read Pfaffian long before the state is destroyed by the field. Additionally, we find that the coherence length of quasiholes travelling along the edge of the sample increases significantly when compared to the case with no applied field. This research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.
Bandurin, Denis A; Tyurnina, Anastasia V; Yu, Geliang L; Mishchenko, Artem; Zólyomi, Viktor; Morozov, Sergey V; Kumar, Roshan Krishna; Gorbachev, Roman V; Kudrynskyi, Zakhar R; Pezzini, Sergio; Kovalyuk, Zakhar D; Zeitler, Uli; Novoselov, Konstantin S; Patanè, Amalia; Eaves, Laurence; Grigorieva, Irina V; Fal'ko, Vladimir I; Geim, Andre K; Cao, Yang
2016-11-21
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 10(3) cm(2) V(-1) s(-1) and 10(4) cm(2) V(-1) s(-1) at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.
量子霍尔效应的研究及进展%The Research and Progress of The Quantum Hall Effect
Institute of Scientific and Technical Information of China (English)
张琳; 米斌周
2014-01-01
对霍尔效应、量子霍尔效应、量子反常霍尔效应等霍尔效应家族一系列成员进行了介绍，并给出了各效应的应用或应用前景，首次综述了霍尔效应家族的发展史。%A series of the Hall Effect family ,such as Hall Effect , Quantum Hall Effect, Quantum Anomalous Hall Effect and so on, are introduced.The effect of application or application prospect for the series of Hall Effect are given.The development history of Hall Effect family is reviewed for the first time.
Glushkov, V V; Lobanova, I I; Ivanov, V Yu; Voronov, V V; Dyadkin, V A; Chubova, N M; Grigoriev, S V; Demishev, S V
2015-12-18
Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic phase of Mn_{1-x}Fe_{x}Si reveals an ordinary Hall effect sign inversion associated with the hidden quantum critical (QC) point x^{*}∼0.11. The effective hole doping at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions, and QC phenomena in Mn_{1-x}Fe_{x}Si. The change of electron and hole concentrations is considered as a "driving force" for tuning the QC regime in Mn_{1-x}Fe_{x}Si via modifying the Ruderman-Kittel-Kasuya-Yosida exchange interaction within the Heisenberg model of magnetism.
Wurstbauer, U.; Levy, A. L.; Pinczuk, A.; West, K. W.; Pfeiffer, L. N.; Manfra, M. J.; Gardner, G. C.; Watson, J. D.
2015-12-01
We report the observation of low-lying collective charge and spin excitations in the second Landau level at ν =2 +1 /3 and also for the very fragile states at ν =2 +2 /5 and 2 +3 /8 in inelastic light scattering experiments. These modes exhibit a clear dependence on filling factor and temperature substantiating the unique access to the characteristic neutral excitation spectra of the incompressible fractional quantum Hall effect (FQHE) states. A detailed mode analysis reveals low-energy modes at around 70 μ eV and a sharp mode slightly below the Zeeman energy interpreted as gap and spin-wave excitation, respectively. The lowest-energy collective charge excitation spectrum at ν =2 +1 /3 exhibits significant qualitative similarities with its cousin state in the lowest Landau level at ν =1 /3 suggesting similar magnetoroton minima in the neutral excitations. The mode energies differ by a scaling of 0.15 indicating different interaction physics in the N =0 and N =1 Landau levels. The striking polarization dependence in elastic and inelastic light scattering is discussed in the framework of anisotropic electron phases that allow for the stabilization of nematic FQHE states. The observed excitation spectra provide new insights by accessing quantum phases in the bulk of electron systems and facilitate comparison with different theoretical descriptions of those enigmatic FQHE states.
Men'shov, V. N.; Tugushev, V. V.; Chulkov, E. V.
2016-10-01
We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k • p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.
Emergent chiral spin liquid: fractional quantum Hall effect in a kagome Heisenberg model.
Gong, Shou-Shu; Zhu, Wei; Sheng, D N
2014-09-10
The fractional quantum Hall effect (FQHE) realized in two-dimensional electron systems under a magnetic field is one of the most remarkable discoveries in condensed matter physics. Interestingly, it has been proposed that FQHE can also emerge in time-reversal invariant spin systems, known as the chiral spin liquid (CSL) characterized by the topological order and the emerging of the fractionalized quasiparticles. A CSL can naturally lead to the exotic superconductivity originating from the condense of anyonic quasiparticles. Although CSL was highly sought after for more than twenty years, it had never been found in a spin isotropic Heisenberg model or related materials. By developing a density-matrix renormalization group based method for adiabatically inserting flux, we discover a FQHE in a spin-½ isotropic kagome Heisenberg model. We identify this FQHE state as the long-sought CSL with a uniform chiral order spontaneously breaking time reversal symmetry, which is uniquely characterized by the half-integer quantized topological Chern number protected by a robust excitation gap. The CSL is found to be at the neighbor of the previously identified Z2 spin liquid, which may lead to an exotic quantum phase transition between two gapped topological spin liquids.
Energy Technology Data Exchange (ETDEWEB)
Mogi, M., E-mail: mogi@cmr.t.u-tokyo.ac.jp; Yoshimi, R.; Yasuda, K.; Kozuka, Y. [Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan); Takahashi, K. S. [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Kawasaki, M.; Tokura, Y. [Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)
2015-11-02
Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.
Effects of domain walls in quantum anomalous Hall insulator/superconductor heterostructures
Chen, Chui-Zhen; He, James Jun; Xu, Dong-Hui; Law, K. T.
2017-07-01
In a recent experiment, half-quantized longitudinal conductance plateaus (HQCPs) of height e/22 h have been observed in quantum anomalous Hall (QAH) insulator/superconductor heterostructure transport measurements. However, there are debates about whether these HQCPs are caused by Majorana edge modes or other trivial reasons. It was predicted that HQCPs can only appear when the Hall conductance σx y is quantized. Surprisingly, HQCPs appear when the Hall conductance σx y is only 80% of the quantized value at which extra conducting channels in the bulk should ruin the HQCPs. In this Rapid Communication, we explain how domain walls can cause σx y to deviate from its quantized value and at the same time maintain the quantization of HQCPs. Importantly, our study also explains a long standing puzzle of why ρx x can be finite when ρx y is quantized in QAH systems.
Quasiparticle Tunneling in the Fractional Quantum Hall effect at filling fraction ν=5/2
Radu, Iuliana P.
2009-03-01
In a two-dimensional electron gas (2DEG), in the fractional quantum Hall regime, the quasiparticles are predicted to have fractional charge and statistics, as well as modified Coulomb interactions. The state at filling fraction ν=5/2 is predicted by some theories to have non-abelian statistics, a property that might be exploited for topological quantum computing. However, alternative models with abelian properties have been proposed as well. Weak quasiparticle tunneling between counter-propagating edges is one of the methods that can be used to learn about the properties of the state and potentially distinguish between models describing it. We employ an electrostatically defined quantum point contact (QPC) fabricated on a high mobility GaAs/AlGaAs 2DEG to create a constriction where quasiparticles can tunnel between counter-propagating edges. We study the temperature and dc bias dependence of the tunneling conductance, while preserving the same filling fraction in the constriction and the bulk of the sample. The data show scaling of the bias-dependent tunneling over a range of temperatures, in agreement with the theory of weak quasiparticle tunneling, and we extract values for the effective charge and interaction parameter of the quasiparticles. The ranges of values obtained are consistent with those predicted by certain models describing the 5/2 state, indicating as more probable a non-abelian state. This work was done in collaboration with J. B. Miller, C. M. Marcus, M. A. Kastner, L. N. Pfeiffer and K. W. West. This work was supported in part by the Army Research Office (W911NF-05-1-0062), the Nanoscale Science and Engineering Center program of NSF (PHY-0117795), NSF (DMR-0701386), the Center for Materials Science and Engineering program of NSF (DMR-0213282) at MIT, the Microsoft Corporation Project Q, and the Center for Nanoscale Systems at Harvard University.
Zhou, Tong; Zhang, Jiayong; Xue, Yang; Zhao, Bao; Zhang, Huisheng; Jiang, Hua; Yang, Zhongqin
2016-12-01
A novel topological insulator with tunable edge states, called a quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (S b2H ) monolayer on a LaFe O3 substrate by using ab initio methods. The substrate induces a drastic staggered exchange field in the S b2H film, which plays an important role to generate the QSQAH effect. A topologically nontrivial band gap (up to 35 meV) is opened by Rashba spin-orbit coupling, which can be enlarged by strain and an electric field. To understand the underlying physical mechanism of the QSQAH effect, a tight-binding model based on px and py orbitals is constructed. With the model, the exotic behaviors of the edge states in the heterostructure are investigated. Dissipationless chiral charge edge states related to one valley are found to emerge along both sides of the sample, whereas low-dissipation spin edge states related to the other valley flow only along one side of the sample. These edge states can be tuned flexibly by polarization-sensitive photoluminescence controls and/or chemical edge modifications. Such flexible manipulations of the charge, spin, and valley degrees of freedom provide a promising route towards applications in electronics, spintronics, and valleytronics.
Broken SU(4) Symmetry and The Fractional Quantum Hall Effect in Graphene
Sodemann, Inti; MacDonald, Allan
2014-03-01
We describe a simple variational approach to understand the spin-valley broken symmetry states in the fractional quantum Hall regime of graphene. Our approach allows to predict the incompressible ground states and their charge gaps and is able to explain the observed differences between filling factor ranges | ν | Materials Sciences and Engineering under grant DE-FG03-02ER45958 and by the Welch foundation under grant TBF1473.
Fractional quantum Hall edge: Effect of nonlinear dispersion and edge roton
Jolad, Shivakumar; Sen, Diptiman; Jain, Jainendra K.
2010-01-01
According to Wen's theory, a universal behavior of the fractional quantum Hall edge is expected at sufficiently low energies, where the dispersion of the elementary edge excitation is linear. A microscopic calculation shows that the actual dispersion is indeed linear at low energies, but deviates from linearity beyond certain energy, and also exhibits an "edge roton minimum." We determine the edge exponent from a microscopic approach, and find that the nonlinearity of the dispersion makes a s...
Many-body generalization of the Z2 topological invariant for the quantum spin Hall effect
Lee, Sung-Sik; Ryu, Shinsei
2007-01-01
We propose a many-body generalization of the Z2 topological invariant for the quantum spin Hall insulator, which does not rely on single-particle band structures. The invariant is derived as a topological obstruction that distinguishes topologically distinct many-body ground states on a torus. It is also expressed as a Wilson-loop of the SU(2) Berry gauge field, which is quantized due to the time-reversal symmetry.
Many-Body Generalization of the Z2 Topological Invariant for the Quantum Spin Hall Effect
Lee, Sung-Sik; Ryu, Shinsei
2008-05-01
We propose a many-body generalization of the Z2 topological invariant for the quantum spin Hall insulator, which does not rely on single-particle band structures. The invariant is derived as a topological obstruction that distinguishes topologically distinct many-body ground states on a torus. It is also expressed as a Wilson loop of the SU(2) Berry gauge field, which is quantized due to time-reversal symmetry.
Intrinsic Quantum Anomalous Hall Effect in the Kagome Lattice Cs_{2}LiMn_{3}F_{12}.
Xu, Gang; Lian, Biao; Zhang, Shou-Cheng
2015-10-30
In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs_{2}Mn_{3}F_{12} kagome lattice and on the (001) surface of a Cs_{2}LiMn_{3}F_{12} single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Moreover, a simplified tight binding model based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.
Intrinsic Quantum Anomalous Hall Effect in the Kagome Lattice Cs2 LiMn3 F12
Xu, Gang; Lian, Biao; Zhang, Shou-Cheng; Zhang's Group Team
In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from the ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs2Mn3F12 kagome lattice and on the (001) surface of a Cs2LiMn3F12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Moreover, a simplified tight binding model based on the inplane dd σ antibonding states is constructed to understand the topological band structures of the system.
Energy Technology Data Exchange (ETDEWEB)
Bhardwaj, S [University of Chicago; Mkhitaryan, V V [Ames Laboratory; Gruzberg, I A [Ohio State University
2014-06-01
We consider a recently proposed network model of the integer quantum Hall (IQH) effect in a weak magnetic field. Using a supersymmetry approach, we reformulate the network model in terms of a superspin ladder. A subsequent analysis of the superspin ladder and the corresponding supersymmetric nonlinear sigma model allows us to establish the phase diagram of the network model, and the form of the critical line of the weak-field IQH transition. Our results confirm the universality of the IQH transition, which is described by the same sigma model in strong and weak magnetic fields. We apply the suspersymmetry method to several related network models that were introduced in the literature to describe the quantum Hall effect in graphene, the spin-degenerate Landau levels, and localization of electrons in a random magnetic field.
Duality in the quantum Hall system
Lütken, C. A.; Ross, G. G.
1992-05-01
We suggest that a unified description of the integer and fractional phases of the quantum Hall system may be possible if the scaling diagram of transport coefficients is invariant under linear fractional (modular) transformations. In this model the hierarchy of states, as well as the observed universality of critical exponents, are consequences of a discrete SL(2,openZ) symmetry acting on the parameter space of an effective quantum-field theory. Available scaling data on the position of delocalization fixed points in the integer case and the position of mobility fixed points in the fractional case agree with the model within experimental accuracy.
Supercurrent in the quantum Hall regime
Amet, F.; Ke, C. T.; Borzenets, I. V.; Wang, J.; Watanabe, K.; Taniguchi, T.; Deacon, R. S.; Yamamoto, M.; Bomze, Y.; Tarucha, S.; Finkelstein, G.
2016-05-01
A promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the QH regime remain scarce, and a superconducting current through a QH weak link has been challenging to observe. We demonstrate the existence of a distinct supercurrent mechanism in encapsulated graphene samples contacted by superconducting electrodes, in magnetic fields as high as 2 tesla. The observation of a supercurrent in the QH regime marks an important step in the quest for exotic topological excitations, such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computing.
Zhou, Jian; Jena, Puru
2017-02-01
While most of the two-dimensional (2D) topological crystalline insulators (TCIs) belong to group IV-VI narrow-band-gap semiconductors in a square lattice, in the present work we predict a TCI family based on transition metal intercalated compounds in a hexagonal lattice. First-principles calculations combined with a substrate-fixed globally optimal structural search technique show that a layer of Os prefers a uniform distribution between two graphene sheets. Band dispersion calculations reveal a Dirac point and a Dirac nodal ring near the Fermi level. The Dirac point is ascribed to the hybridization of e2 and e2* orbitals, and the Dirac ring is formed due to dispersion of s and e1* orbitals. Upon inclusion of spin-orbit coupling, these Dirac states open topologically nontrivial local band gaps, which are characterized by nonzero mirror Chern numbers. The quantum spin Hall effect is also observed by integrating the spin Berry curvature in the Brillouin zone. In contrast to the 2D group IV-VI TCIs whose band inversions at X and Y points are "locked" by C4 rotation symmetry, here the relative energy of two local band gaps can be manipulated by in-plane biaxial strains. Some other similar intercalation compounds are also shown to be topologically nontrivial. Our work extends the 2D TCI family into a hexagonal lattice composed of transition metals.
Spin Singlet Quantum Hall Effect and Nonabelian Landau-Ginzburg Theory
Balatsky, A V
1992-01-01
In this paper we present a theory of Singlet Quantum Hall Effect (SQHE). We show that the Halperin-Haldane SQHE wave function can be written in the form of a product of a wave function for charged semions in a magnetic field and a wave function for the Chiral Spin Liquid of neutral spin-$\\12$ semions. We introduce field-theoretic model in which the electron operators are factorized in terms of charged spinless semions (holons) and neutral spin-$\\12$ semions (spinons). Broken time reversal symmetry and short ranged spin correlations lead to $SU(2)_{k=1}$ Chern-Simons term in Landau-Ginzburg action for SQHE phase. We construct appropriate coherent states for SQHE phase and show the existence of $SU(2)$ valued gauge potential. This potential appears as a result of ``spin rigidity" of the ground state against any displacements of nodes of wave function from positions of the particles and reflects the nontrivial monodromy in the presence of these displacements. We show that the Halperin-Haldane SQHE wave function ...
Smearing of the quantum anomalous Hall effect due to statistical fluctuations of magnetic dopants
Yue, Z.; Raikh, M. E.
2016-10-01
The quantum anomalous Hall effect is induced by substitution of a certain portion x of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states N (E ) emerging as a result of statistical fluctuations of the composition x in the vicinity of the transition point where the average gap E¯g passes through zero. A local gap follows the fluctuations of x . Using the instanton approach, we show that, near the gap edges, the tails are exponential lnN (E ) ∝-(E¯g-|E |) and the tail states are due to small local gap reduction. Our main finding is that, even when the smearing magnitude exceeds the gap width, there exists a semihard gap around zero energy, where lnN (E ) ∝-E/¯g|E | ln(E/¯g|E | ) . The states responsible for N (E ) originate from local gap reversals within narrow rings. The consequence of the semihard gap is the Arrhenius, rather than variable-range hopping, temperature dependence of the diagonal conductivity at low temperatures.
Mukherjee, Sutirtha; Mandal, Sudhansu
The internal structure and topology of the ground states for fractional quantum Hall effect (FQHE) are determined by the relative angular momenta between all the possible pairs of electrons. Laughlin wave function is the only known microscopic wave function for which these relative angular momenta are homogeneous (same) for any pair of electrons and depend solely on the filling factor. Without invoking any microscopic theory, considering only the relationship between number of flux quanta and particles in spherical geometry, and allowing the possibility of inhomogeneous (different) relative angular momenta between any two electrons, we develop a general method for determining a closed-form ground state wave function for any incompressible FQHE state. Our procedure provides variationally obtained very accurate wave functions, yet having simpler structure compared to any other known complex microscopic wave functions for the FQHE states. This method, thus, has potential in predicting a very accurate ground state wave function for the puzzling states such as the state at filling fraction 5/2. We acknowledge support from Department of Science and Technology, India.
Zhang, Yuhe; Wójs, A.; Jain, J. K.
2016-09-01
The spin transitions in the fractional quantum Hall effect provide a direct measure of the tiny energy differences between differently spin-polarized states and thereby serve as an extremely sensitive test of the quantitative accuracy of the theory of the fractional quantum Hall effect, and, in particular, of the role of Landau-level mixing in lifting the particle-hole symmetry. We report on an accurate quantitative study of this physics, evaluating the effect of Landau-level mixing in a nonperturbative manner using a fixed-phase diffusion Monte Carlo method. We find excellent agreement between our calculated critical Zeeman energies and the experimentally measured values. In particular, we find, as also do experiments, that the critical Zeeman energies for fractional quantum Hall states at filling factors ν =2 -n /(2 n ±1 ) are significantly higher than those for ν =n /(2 n ±1 ), a quantitative signature of the lifting of particle-hole symmetry due to Landau-level mixing.
Zhang, Yuhe; Wójs, A; Jain, J K
2016-09-09
The spin transitions in the fractional quantum Hall effect provide a direct measure of the tiny energy differences between differently spin-polarized states and thereby serve as an extremely sensitive test of the quantitative accuracy of the theory of the fractional quantum Hall effect, and, in particular, of the role of Landau-level mixing in lifting the particle-hole symmetry. We report on an accurate quantitative study of this physics, evaluating the effect of Landau-level mixing in a nonperturbative manner using a fixed-phase diffusion Monte Carlo method. We find excellent agreement between our calculated critical Zeeman energies and the experimentally measured values. In particular, we find, as also do experiments, that the critical Zeeman energies for fractional quantum Hall states at filling factors ν=2-n/(2n±1) are significantly higher than those for ν=n/(2n±1), a quantitative signature of the lifting of particle-hole symmetry due to Landau-level mixing.
Burgess, C P
2001-01-01
We show how particle-vortex duality implies the existence of a large non-abelian discrete symmetry group which relates the electromagnetic response for dual two-dimensional systems in a magnetic field. For conductors with charge carriers satisfying Fermi statistics (or those related to fermions by the action of the group), the resulting group is known to imply many, if not all, of the remarkable features of Quantum Hall systems. For conductors with boson charge carriers (modulo group transformations) a different group is predicted, implying equally striking implications for the conductivities of these systems, including a super-universality of the critical exponents for conductor/insulator and superconductor/insulator transitions in two dimensions and a hierarchical structure, analogous to that of the quantum Hall effect but different in its details. Our derivation shows how this symmetry emerges at low energies, depending only weakly on the details of dynamics of the underlying systems.
Zhou, Liujiang; Shao, Bin; Shi, Wujun; Sun, Yan; Felser, Claudia; Yan, Binghai; Frauenheim, Thomas
2016-09-01
We report the existence of the quantum spin Hall effect (QSHE) in monolayers of transition-metal carbides MC (M = Zr, Hf). Under ambient conditions, the ZrC monolayer exhibits QSHE with an energy gap of 54 meV, in which topological helical edge states exist. Enhanced d xy -d xy interaction induces band inversion, resulting in nontrivial topological features. By applying in-plane strain, the HfC monolayer can be tuned from a trivial insulator to a quantum spin Hall insulator with an energy gap of 170 meV, three times that of the ZrC monolayer. The strong stability of MC monolayers provides a new platform for QSHE and spintronic applications.
Topological Hubbard model and its high-temperature quantum Hall effect.
Neupert, Titus; Santos, Luiz; Ryu, Shinsei; Chamon, Claudio; Mudry, Christopher
2012-01-27
The quintessential two-dimensional lattice model that describes the competition between the kinetic energy of electrons and their short-range repulsive interactions is the repulsive Hubbard model. We study a time-reversal symmetric variant of the repulsive Hubbard model defined on a planar lattice: Whereas the interaction is unchanged, any fully occupied band supports a quantized spin Hall effect. We show that at 1/2 filling of this band, the ground state develops spontaneously and simultaneously Ising ferromagnetic long-range order and a quantized charge Hall effect when the interaction is sufficiently strong. We ponder on the possible practical applications, beyond metrology, that the quantized charge Hall effect might have if it could be realized at high temperatures and without external magnetic fields in strongly correlated materials.
Integer quantum Hall effect on a six-valley hydrogen-passivated silicon (111) surface.
Eng, K; McFarland, R N; Kane, B E
2007-07-01
We report magnetotransport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate that the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors is difficult to reconcile with noninteracting electron theory.
Hall Effect Gyrators and Circulators
Viola, Giovanni; DiVincenzo, David P.
2014-04-01
The electronic circulator and its close relative the gyrator are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative nonreciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an Ohmically contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90°. In this limit, we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the ac wavelength. An experiment is proposed to achieve GHz-band gyration in millimeter (and smaller) scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realizing a Hall gyrator is also analyzed.
Energy Technology Data Exchange (ETDEWEB)
Zhou, Jian, E-mail: jzhou2@vcu.edu, E-mail: pjena@vcu.edu; Jena, Puru, E-mail: jzhou2@vcu.edu, E-mail: pjena@vcu.edu [Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Zhang, Shunhong [Center for Applied Physics and Technology, College of Engineering, Peking University, Beijing 100871 (China); Wang, Qian [Center for Applied Physics and Technology, College of Engineering, Peking University, Beijing 100871 (China); Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
2016-06-20
Motivated by the growth of superconducting atomic hexagonal Ga layers on GaN surface we have calculated the electronic properties of Hf intercalated honeycomb Ga layers using first-principles theory. In contrast to the hexagonal Ga layers where substrate is necessary for their stability, we find the above structure to be dynamically stable in its freestanding form with small formation energy. In particular, six Dirac cones composed of Hf-d{sub xy}/d{sub x2-y2} orbitals are observed in the first Brillouin zone, slightly below the Fermi energy. Spin-orbit coupling opens a large band gap of 177 meV on these Dirac cones. By calculating its mirror Chern number, we demonstrate that this band gap is topologically nontrivial and protected by mirror symmetry. Such mirror symmetry protected band gaps are rare in hexagonal lattice. A large topological crystalline quantum spin Hall conductance σ{sub SH} ∼ −4 e{sup 2}/h is also revealed. Moreover, electron-phonon coupling calculations reveal that this material is superconducting with a transition temperature T{sub c} = 2.4 K, mainly contributed by Ga out-of-plane vibrations. Our results provide a route toward manipulating quantum spin Hall and superconducting behaviors in a single material which helps to realize Majorana fermions and topological superconductors.
de Nova, J R M
2015-01-01
The work is divided in three parts. We devote the first part to the study of analog Hawking radiation in Bose-Einstein condensates. We study numerically the birth of a sonic black hole in an outcoupled Bose-Einstein condensate after relaxing the confinement provided by an optical lattice. We also study possible signatures of spontaneous Hawking radiation. We propose that the violation of CS inequalities is a smoking gun of the presence of the Hawking effect. We compare this criterion with the presence of entaglement, finding that both are equivalent under usual assumptions. Finally, we study a different gravitational analogue: the so-called black-hole laser. The most interesting result is the appearance of a regime of continuous and periodic emission of solitons, providing the most strong analogue with optical lasers. In the second part, we analyze the effect of the introduction of a short Bragg pulse in a thermal cloud. We show that the induced periodic density pattern decays to the equilibrium profile. Howe...
Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer.
Sanchez-Yamagishi, Javier D; Luo, Jason Y; Young, Andrea F; Hunt, Benjamin M; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C; Jarillo-Herrero, Pablo
2017-02-01
Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.
Probing bulk physics in the 5/2 fractional quantum Hall effect using the Corbino geometry
Schmidt, Benjamin; Bennaceur, Keyan; Bilodeau, Simon; Gaucher, Samuel; Lilly, Michael; Reno, John; Pfeiffer, Loren; West, Ken; Reulet, Bertrand; Gervais, Guillaume
We present two- and four-point Corbino geometry transport measurements in the second Landau level in GaAs/AlGaAs heterostructures. By avoiding edge transport, we are able to directly probe the physics of the bulk quasiparticles in fractional quantum Hall (FQH) states including 5/2. Our highest-quality sample shows stripe and bubble phases in high Landau levels, and most importantly well-resolved FQH minima in the second Landau level. We report Arrhenius-type fits to the activated conductance, and find that σ0 agrees well with theory and existing Hall geometry data in the first Landau level, but not in the second Landau level. We will discuss the advantages the Corbino geometry could bring to various experiments designed to detect the non-Abelian entropy at 5/2, and our progress towards realizing those schemes. The results of these experiments could complement interferometry and other edge-based measurements by providing direct evidence for non-Abelian behaviour of the bulk quasiparticles. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL8500.
Quantum Hall Effect and Black Hole Entropy in Loop Quantum Gravity
Vaid, Deepak
2012-01-01
In LQG, black hole horizons are described by 2+1 dimensional boundaries of a bulk 3+1 dimensional spacetime. The horizon is endowed with area by lines of gravitational flux which pierce the surface. As is well known, counting of the possible states associated with a given set of punctures allows us to recover the famous Bekenstein-Hawking area law according to which the entropy of a black hole is proportional to the area of the associated horizon $ S_{BH} \\propto A_{Hor} $. It is also known that the dynamics of the horizon degrees of freedom is described by the Chern-Simons action of a $\\mathfrak{su(2)}$ (or $\\mathfrak{u(1)}$ after a certain gauge fixing) valued gauge field $A_{\\mu}^i$. Recent numerical work which performs the state-counting for punctures, from first-principles, reveals a step-like structure in the entropy-area relation. We argue that both the presence of the Chern-Simons action and the step-like structure in the entropy-area curve are indicative of the fact that the effective theory which de...
7/3 fractional quantum Hall effect: topology, trion excitations and edge states
Balram, Ajit C.; Wu, Ying-Hai; Sreejith, G. J.; Wójs, Arkadiusz; Jain, J. K.
2013-03-01
Exact diagonalization studies on finite systems show that the quasihole and quasiparticle excitations in the 7/3 fractional quantum Hall (FQH) state are qualitatively distinct from those of the 1/3 state, suggesting the possibility of different topological origins for the two states. We perform composite-fermion diagonalization on larger systems and also evaluate the entanglement spectrum, which shows that in spite of these strong finite size deviations, the 7/3 and 1/3 FQH states have the same topological structure in the thermodynamic limit. Nonetheless, there are substantial non-topological differences between the two, arising from the stronger residual interaction between composite fermions at 7/3. In particular, we show that the lowest energy charged excitations of the 7/3 state are complex trions of composite fermions, which have a much larger size than the charged excitations at 1/3. We discuss many observable consequences of our results.
Matrix models and growth processes : from viscous flows to the quantum Hall effect
Zabrodin, A V
2006-01-01
We review the recent developments in the theory of normal, normal self-dual and general complex random matrices. The distribution and correlations of the eigenvalues at large scales are investigated in the large $N$ limit. The 1/N expansion of the free energy is also discussed. Our basic tool is a specific Ward identity for correlation functions (the loop equation), which follows from invariance of the partition function under reparametrizations of the complex eigenvalues plane. The method for handling the loop equation requires the technique of boundary value problems in two dimensions and elements of the potential theory. As far as the physical significance of these models is concerned, we discuss, in some detail, the recently revealed applications to diffusion-controlled growth processes (e.g., to the Saffman-Taylor problem) and to the semiclassical behaviour of electronic blobs in the quantum Hall regime.
Boundary maps for C*-crossed products with R with an application to the quantum Hall effect
Kellendonk, J
2003-01-01
The boundary map in K-theory arising from the Wiener-Hopf extension of a crossed product algebra with $\\RR$ is the Connes-Thom isomorphism. In this article, the Wiener Hopf extension is combined with the Heisenberg group algebra to provide an elementary construction of a corresponding map in cyclic cohomology. It then follows directly from a non-commutative Stokes theorem that this map is dual w.r.t. Connes' pairing of cyclic cohomology with K-theory. As an application, we prove equality of quantized bulk and edge conductivities for the integer quantum Hall effect described by continuous magnetic Schrödinger operators.
Optical Hall effect-model description: tutorial.
Schubert, Mathias; Kühne, Philipp; Darakchieva, Vanya; Hofmann, Tino
2016-08-01
The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to the incident electric field, and analogous to the static electrical Hall effect. The electrical Hall effect and certain cases of the optical Hall effect observations can be explained by extensions of the classic Drude model for the transport of electrons in metals. The optical Hall effect is most useful for characterization of electrical properties in semiconductors. Among many advantages, while the optical Hall effect dispenses with the need of electrical contacts, electrical material properties such as effective mass and mobility parameters, including their anisotropy as well as carrier type and density, can be determined from the optical Hall effect. Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry at an oblique angle of incidence. In this paper, we review and discuss physical model equations, which can be used to calculate the optical Hall effect in single- and multiple-layered structures of semiconductor materials. We define the optical Hall effect dielectric function tensor, demonstrate diagonalization approaches, and show requirements for the optical Hall effect tensor from energy conservation. We discuss both continuum and quantum approaches, and we provide a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4×4 matrix algebra to calculate data accessible by experiment. In a follow-up paper, we will discuss strategies and approaches for experimental data acquisition and analysis.
Mini array of quantum Hall devices based on epitaxial graphene
Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.
2016-05-01
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (resistance bridge.
Masuda, Hidetoshi; Sakai, Hideaki; Tokunaga, Masashi; Yamasaki, Yuichi; Miyake, Atsushi; Shiogai, Junichi; Nakamura, Shintaro; Awaji, Satoshi; Tsukazaki, Atsushi; Nakao, Hironori; Murakami, Youichi; Arima, Taka-hisa; Tokura, Yoshinori; Ishiwata, Shintaro
2016-01-01
For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.
Role of Exciton Screening in the 7/3 Fractional Quantum Hall Effect
Balram, Ajit C.; Wu, Ying-Hai; Sreejith, G. J.; Wójs, Arkadiusz; Jain, Jainendra K.
2013-05-01
The excitations of the 7/3 fractional Hall state, one of the most prominent states in the second Landau level, are not understood. We study the effect of screening by composite fermion excitons and find that it causes a strong renormalization at 7/3, thanks to a relatively small exciton gap and a relatively large residual interaction between composite fermions. The excitations of the 7/3 state are to be viewed as composite fermions dressed by a large exciton cloud. Their wide extent has implications for experiments as well as for analysis of finite system exact diagonalization studies.
Quantum energy teleportation in a quantum Hall system
Energy Technology Data Exchange (ETDEWEB)
Yusa, Go; Izumida, Wataru; Hotta, Masahiro [Department of Physics, Tohoku University, Sendai 980-8578 (Japan)
2011-09-15
We propose an experimental method for a quantum protocol termed quantum energy teleportation (QET), which allows energy transportation to a remote location without physical carriers. Using a quantum Hall system as a realistic model, we discuss the physical significance of QET and estimate the order of energy gain using reasonable experimental parameters.
Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.
Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y
2015-04-14
The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.
Manifestation of many-body interactions in the integer quantum Hall effect regime
Oswald, Josef; Römer, Rudolf A.
2017-09-01
We use the self-consistent Hartree-Fock approximation for numerically addressing the integer quantum Hall (IQH) regime in terms of many-body physics at higher Landau levels (LL). The results exhibit a strong tendency to avoid the simultaneous existence of partly filled spin-up and spin-down LLs. Partly filled LLs appear as a mixture of coexisting regions of full and empty LLs. We obtain edge stripes with approximately constant filling factor ν close to half-odd filling at the boundaries between the regions of full and empty LLs, which we explain in terms of the g -factor enhancement as a function of a locally varying ν across the compressible stripes. The many-particle interactions follow a behavior as it would result from applying Hund's rule for the occupation of the spin split LLs. The screening of the disorder and edge potential appears significantly reduced as compared to screening based on a Thomas-Fermi approximation. For addressing carrier transport, we use a nonequilibrium network model (NNM) that handles the lateral distribution of the experimentally injected nonequilibrium chemical potentials μ .
{nu}=(1)/(2) quantum Hall effect in the Aharonov-Casher geometry in a mesoscopic ring
Energy Technology Data Exchange (ETDEWEB)
Melin, R.; Doucot, B. [CRTBT-CNRS, 38042 Grenoble BP 166X Cedex (France)
1997-05-01
We study the effect of an electric charge in the middle of a ring of electrons in a magnetic field such as {nu}=(1)/(2). In the absence of the central charge, a residual current should appear due to an Aharanov-Bohm effect. As the charge varies, periodic currents should appear in the ring. We evaluate the amplitude of these currents, as well as their period as the central charge varies. The presence of these currents should be a direct signature of the existence of a statistical gauge field in the {nu}=(1)/(2) quantum Hall effect. Numerical diagonalizations for a small number of electrons on the sphere are also carried out. Like the mean-field results, the numerical results up to nine electrons show a nontrivial reshuffling of the ground state as the electric charge is varied. {copyright} {ital 1997} {ital The American Physical Society}
Arciniaga, Michael; Peterson, Michael R.
2016-07-01
We derive the single-particle eigenenergies and eigenfunctions for massless Dirac fermions confined to the surface of a sphere in the presence of a magnetic monopole, i.e., we solve the Landau level problem for electrons in graphene on the Haldane sphere. With the single-particle eigenfunctions and eigenenergies we calculate the Haldane pseudopotentials for the Coulomb interaction in the second Landau level and calculate the effective pseudopotentials characterizing an effective Landau level mixing Hamiltonian entirely in the spherical geometry to be used in theoretical studies of the fractional quantum Hall effect in graphene. Our treatment is analogous to the formalism in the planar geometry and reduces to the planar results in the thermodynamic limit.
Nonlocal Anomalous Hall Effect.
Zhang, Steven S-L; Vignale, Giovanni
2016-04-01
The anomalous Hall (AH) effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator [yttrium iron garnet (YIG)], even when precautions are taken to ensure that there is no induced magnetization in the metal. We propose a theory of this effect based on the combined action of spin-dependent scattering from the magnetic interface and the spin-Hall effect in the bulk of the metal. At variance with previous theories, we predict the effect to be of first order in the spin-orbit coupling, just as the conventional anomalous Hall effect-the only difference being the spatial separation of the spin-orbit interaction and the magnetization. For this reason we name this effect the nonlocal anomalous Hall effect and predict that its sign will be determined by the sign of the spin-Hall angle in the metal. The AH conductivity that we calculate from our theory is in order of magnitude agreement with the measured values in Pt/YIG structures.
Metal-to-insulator switching in quantum anomalous Hall states
Pan, Lei; Kou, Xufeng; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Shao, Qiming; Zhang, Shou Cheng; Wang, Kang Lung
Quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films as a form of dissipationless transport without external magnetic field. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2 Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. The universal QAHE phase diagram is further confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different.
Nonlocal Anomalous Hall Effect
Zhang, Steven S.-L.; Vignale, Giovanni
2016-04-01
The anomalous Hall (AH) effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also occurs in a nonmagnetic metal (Pt) in contact with a magnetic insulator [yttrium iron garnet (YIG)], even when precautions are taken to ensure that there is no induced magnetization in the metal. We propose a theory of this effect based on the combined action of spin-dependent scattering from the magnetic interface and the spin-Hall effect in the bulk of the metal. At variance with previous theories, we predict the effect to be of first order in the spin-orbit coupling, just as the conventional anomalous Hall effect—the only difference being the spatial separation of the spin-orbit interaction and the magnetization. For this reason we name this effect the nonlocal anomalous Hall effect and predict that its sign will be determined by the sign of the spin-Hall angle in the metal. The AH conductivity that we calculate from our theory is in order of magnitude agreement with the measured values in Pt /YIG structures.
Effective field theory of an anomalous Hall metal from interband quantum fluctuations
Chua, Victor; Assawasunthonnet, Wathid; Fradkin, Eduardo
2017-07-01
We construct an effective field theory, a two-dimensional two-component metallic system described by a model with two Fermi surfaces ("pockets"). This model describes a translationally invariant metallic system with two types of fermions, each with its own Fermi surface, with forward scattering interactions. This model, in addition to the O (2 ) rotational invariance, has a U (1 )×U (1 ) symmetry of separate charge conservation for each Fermi surface. For sufficiently attractive interactions in the d -wave (quadrupolar) channel, this model has an interesting phase diagram that includes a spontaneously generated anomalous Hall metal phase. We derive the Landau-Ginzburg effective action of quadrupolar order parameter fields which enjoys an O (2 )×U (1 ) global symmetry associated to spatial isotropy and the internal U (1 ) relative phase symmetries, respectively. We show that the order parameter theory is dynamically local with a dynamical scaling of z =2 and perform a one-loop renormalization group analysis of the Landau-Ginzburg theory. The electronic liquid crystal phases that result from spontaneous symmetry breaking are studied and we show the presence of Landau damped Nambu-Goldstone modes at low momenta that is a signature of non-Fermi-liquid behavior. Electromagnetic linear response is also analyzed in both the normal and symmetry broken phases from the point of view of the order parameter theory. The nature of the coupling of electromagnetism to the order parameter fields in the normal phase is non-minimal and decidedly contains a precursor to the anomalous Hall response in the form of a order-parameter-dependent Chern-Simons term in the effective action.
Supersymmetry in the Fractional Quantum Hall Regime
Sagi, Eran
2016-01-01
Supersymmetry (SUSY) is a symmetry transforming bosons to fermions and vice versa. Indications of its existence have been extensively sought after in high-energy experiments. However, signatures of SUSY have yet to be detected. In this manuscript we propose a condensed matter realization of SUSY on the edge of a Read-Rezayi quantum Hall state, given by filling factors of the form $\
Zhou, Yan-Feng; Guo, Ai-Min; Sun, Qing-Feng
2016-08-01
We study the influence of a step defect on surface states in three-dimensional topological insulators subject to a perpendicular magnetic field. By calculating the energy spectrum of the surface states, we find that Landau levels (LLs) can form on flat regions of the surface and are distant from the step defect, and several subbands emerge at the side surface of the step defect. The subband which connects to the two zeroth LLs is spin polarized and chiral. In particular, when the electron transports along the side surface, the electron spin direction can be manipulated arbitrarily by gate voltage. Also, no reflection occurs even if the electron spin direction is changed. This provides a fascinating avenue to control the electron spin easily and coherently. In addition, regarding the subbands with a high LL index, there exist spin-momentum locking helical states and the quantum spin Hall effect can appear.
Ben-Abdallah, Philippe
2015-01-01
A near-field thermal Hall effect (i.e.Righi-Leduc effect) in lattices of magneto-optical particles placed in a constant magnetic field is predicted. This effect is related to a symetry breaking in the system induced by the magnetic field which gives rise to preferential channels for the heat-transport by photon tunneling thanks to the particles anisotropy tuning.
Interactions, disorder and spin waves in quantum Hall ferromagnets near integer filling
Rapsch, S
2001-01-01
dynamics is discussed in chapter 5 and employed to study spin waves in a domain wall structure. A hydrodynamic theory of spin waves is used to treat long-wavelength excitations of randomly disordered quantum Hall ferromagnets. Finally, the contribution of spin waves to the optical conductivity is studied in chapter 6. Predictions are made for the experimental signatures of spin waves in disordered quantum Hall systems. The observability of these signatures is discussed both for transport measurements and NMR experiments. The interplay between exchange interactions and disorder is studied in quantum Hall ferromagnets near integer filling. Both analytical and numerical methods are used to investigate a non-linear sigma model of these systems in the limit of vanishing Zeeman coupling and at zero temperature. Chapter 1 gives an introduction to the quantum Hall effect and to quantum Hall ferromagnets in particular. A brief review of existing work on disordered quantum Hall systems is included. In chapters 2-4, the...
Fractional Quantum Hall Physics in Jaynes-Cummings-Hubbard Lattices
Hayward, Andrew L. C.; Martin, Andrew M.; Greentree, Andrew D.
2012-01-01
Jaynes-Cummings-Hubbard arrays provide unique opportunities for quantum emulation as they exhibit convenient state preparation and measurement, and in-situ tuning of parameters. We show how to realise strongly correlated states of light in Jaynes-Cummings-Hubbard arrays under the introduction of an effective magnetic field. The effective field is realised by dynamic tuning of the cavity resonances. We demonstrate the existence of Fractional Quantum Hall states by com- puting topological invar...
Li, Sheng-Shi; Ji, Wei-Xiao; Li, Ping; Hu, Shu-Jun; Cai, Li; Zhang, Chang-Wen; Yan, Shi-Shen
2017-06-28
The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to their robust gapless edge states inside insulating bulk gap. However, the currently discussed QSH insulators usually suffer from ultrahigh vacuum or low temperature due to the small bulk gap, which limits their practical applications. Searching for large-gap QSH insulators is highly desirable. Here, the tunable QSH state of a Bi(110) films with a black phosphorus (BP) structure, which is robust against structural deformation and electric field, is explored by first-principles calculations. It is found that the two-monolayer BP-Bi(110) film obtains a tunable large bulk gap by strain engineering and its QSH effect shows a favorable robustness within a wide range of combinations of in-plane and out-of-plane strains, although a single in-plane compression or out-of-plane extension may restrict the topological phase due to the self-doping effect. More interestingly, in view of biaxial strain, two competing physics on band topology induced by bonding-antibonding and px,y-pz band inversions are obtained. Meanwhile, the QSH effect can be persevered under an electric field of up to 0.9 V/Å. Moreover, with appropriate in-plane strain engineering, a nontrivial topological phase in a four-monolayer BP-Bi(110) film is identified. Our findings suggest that these two-dimensional BP-Bi(110) films are ideal platforms of the QSH effect for low-power dissipation devices.
Institute of Scientific and Technical Information of China (English)
ZHOU Xiang; HU Cheng-zheng; GONG Ping; WANG Ai-jun
2005-01-01
The relations between Hall effect and symmetry are discussed for all 2- and 3 dimensional quasicrystals with crystallographically forbidden symmetries. The results show that the numbers of independent components of the Hall coefficient (RH) are one for 3-dimensional quasicrystals, two for those 2 dimensional quasicrystals whose symmetry group is non-Abelian, and three for those 2-dimensional quasicrystals whose symmetry group is Abelian, respectively. The quasicrystals with the same number of independent components have the same form of the components of RH.
The Quantum Monty Hall Problem
D'Ariano, G M; Keyl, M; Kümmerer, B; Maassen, H; Werner, R F
2002-01-01
We consider a quantum version of a well-known statistical decision problem, whose solution is, at first sight, counter-intuitive to many. In the quantum version a continuum of possible choices (rather than a finite set) has to be considered. It can be phrased as a two person game between a player P and a quiz master Q. Then P always has a strategy at least as good as in the classical case, while Q's best strategy results in a game having the same value as the classical game. We investigate the consequences of Q storing his information in classical or quantum ways. It turns out that Q's optimal strategy is to use a completely entangled quantum notepad, on which to encode his prior information.
A Holographic Quantum Hall Ferromagnet
Kristjansen, C; Semenoff, G W
2013-01-01
A detailed numerical study of a recent proposal for exotic states of the D3-probe D5 brane system with charge density and an external magnetic field is presented. The state has a large number of coincident D5 branes blowing up to a D7 brane in the presence of the worldvolume electric and magnetic fields which are necessary to construct the holographic state. Numerical solutions have shown that these states can compete with the the previously known chiral symmetry breaking and maximally symmetric phases of the D3-D5 system. Moreover, at integer filling fractions, they are incompressible with integer quantized Hall conductivities. In the dual superconformal defect field theory, these solutions correspond to states which break the chiral and global flavor symmetries spontaneously. The region of the temperature-density plane where the D7 brane has lower energy than the other known D5 brane solutions is identified. A hypothesis for the structure of states with filling fraction and Hall conductivity greater than on...
Kunkel, W. B.
1981-01-01
Describes an apparatus and procedure for conducting an undergraduate laboratory experiment to quantitatively study the Hall effect in a plasma. Includes background information on the Hall effect and rationale for conducting the experiment. (JN)
Single-electron quantum tomography in quantum Hall edge channels
Energy Technology Data Exchange (ETDEWEB)
Grenier, Ch; Degiovanni, P [Universite de Lyon, Federation de Physique Andre Marie Ampere, CNRS-Laboratoire de Physique de l' Ecole Normale Superieure de Lyon, 46 Allee d' Italie, 69364 Lyon Cedex 07 (France); Herve, R; Bocquillon, E; Parmentier, F D; Placais, B; Berroir, J M; Feve, G, E-mail: Pascal.Degiovanni@ens-lyon.fr [Laboratoire Pierre Aigrain, Departement de Physique de l' Ecole Normale Superieure, 24 rue Lhomond, 75231 Paris Cedex 05 (France)
2011-09-15
We propose a quantum tomography protocol to measure single-electron coherence in quantum Hall edge channels, and therefore access for the first time the wavefunction of single-electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single-electron decoherence and would provide a quantitative tool for analyzing single- to few-electron sources. We show how this protocol could be implemented using ultrahigh-sensitivity noise measurement schemes.
$\\kappa$-deformed Landau levels and implications on the integer quantum Hall effect
Andrade, Fabiano M; Assafrão, Denise; Filgueiras, Cleverson
2016-01-01
In this letter the $\\kappa$-deformed Dirac equation is used to study the relativistic generalization of the $\\kappa$-deformed Landau levels and the consequences of the deformation on the Hall conductivity. The isolated solutions for the first order differential equations, excluded from the Sturm-Liouville problem, are investigated. They do exist, but are independent of the deformation parameter. An expression for the $\\kappa$-deformed relativistic Landau levels is obtained. It is observed that the deformation parameter breaks the Landau levels degeneracy. Considering the $\\kappa$-deformed Landau levels in the nonrelativistic regime the Hall conductivity of a two-dimensional electron system is obtained. The expression obtained recovers the well-known result for the usual Hall conductivity in the limit $\\varepsilon=\\kappa^{-1}\\to 0$. It is also observed that deformation generates new plateaus of conductivity in a such way that the plateaus widths of the deformed system are less than the undeformed one.
Methods to measure the charge of the quasiparticles in the fractional quantum Hall effect
Kivelson, S. A.; Pokrovsky, V. L.
1989-07-01
We propose various experimental circumstances in which the longitudinal resistance of a two-dimensional electron gas in a high transverse magnetic field depends in a simple and characteristic way on the charge of the quasiparticle excitations. We propose that experiments of this sort could be used to directly measure the charge of the quasiparticle excitations which carry the dissipative part of the current. While it has been persuasively argued by Laughlin that the Hall conductance itself measures the quasiparticle charge, the connection is indirect, since the Hall current is carried by the condensate, not by the quasiparticles.
Collective edge modes in fractional quantum Hall systems
Nguyen, Hoang K.; Joglekar, Yogesh N.; Murthy, Ganpathy
2004-07-01
Over the past few years one of us (Murthy) in collaboration with Shankar has developed an extended Hamiltonian formalism capable of describing the ground-state and low-energy excitations in the fractional quantum Hall regime. The Hamiltonian, expressed in terms of composite fermion operators, incorporates all the nonperturbative features of the fractional Hall regime, so that conventional many-body approximations such as Hartree-Fock and time-dependent Hartree-Fock are applicable. We apply this formalism to develop a microscopic theory of the collective edge modes in fractional quantum Hall regime. We present the results for edge mode dispersions at principal filling factors ν=1/3 , 1/5 , and 2/5 for systems with unreconstructed edges. The primary advantage of the method is that one works in the thermodynamic limit right from the beginning, thus avoiding the finite-size effects which ultimately limit exact diagonalization studies.
Nonlinear transport of graphene in the quantum Hall regime
Tian, Shibing; Wang, Pengjie; Liu, Xin; Zhu, Junbo; Fu, Hailong; Taniguchi, Takashi; Watanabe, Kenji; Chen, Jian-Hao; Lin, Xi
2017-03-01
We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.
Buchenau, Sören; Sergelius, Philip; Wiegand, Christoph; Bäß ler, Svenja; Zierold, Robert; Shin, Ho Sun; Rübhausen, Michael; Gooth, Johannes; Nielsch, Kornelius
2017-03-01
Bi2Se3 nanoplate devices are synthesized on SiO2 and ferrimagnetic insulator substrates. We experimentally demonstrate that ferromagnetism is induced into the bottom surface. The symmetry broken bottom states give rise to an additional Shubnikov-de Haas frequency and leads to a decoupling of the top and bottom quantum Hall effects. We present a three-channel model that separates the bulk, top and bottom surface contributions to the Hall resistance, indicating the presence of two symmetry shifted half-integer QHEs.
Hamiltonian Theory of the Fractional Quantum Hall Effect: Effect of Landau Level Mixing
Murthy, Ganpathy; Shankar, R.
2002-01-01
We derive an effective hamiltonian in the Lowest Landau Level (LLL) that incorporates the effects of Landau-level mixing to all higher Landau levels to leading order in the ratio of interaction energy to the cyclotron energy. We then transcribe the hamiltonian to the composite fermion basis using our hamiltonian approach and compute the effect of LL mixing on transport gaps.
A topological Dirac insulator in a quantum spin Hall phase
Hsieh, David; Qian, Dong; Wray, Lewis; Xia, Yuqi; San Hor, Yew; Cava, Robert; Hasan, Zahid
2009-03-01
When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi1-xSbx single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy, we report the direct observation of massive Dirac particles in the bulk of Bi0.9Sb0.1 and provide a comprehensive mapping of the Dirac insulators gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the topological metal.
Directory of Open Access Journals (Sweden)
Kiryl Pakrouski
2015-04-01
Full Text Available Interesting non-Abelian states, e.g., the Moore-Read Pfaffian and the anti-Pfaffian, offer candidate descriptions of the ν=5/2 fractional quantum Hall state. But, the significant controversy surrounding the nature of the ν=5/2 state has been hampered by the fact that the competition between these and other states is affected by small parameter changes. To study the phase diagram of the ν=5/2 state, we numerically diagonalize a comprehensive effective Hamiltonian describing the fractional quantum Hall effect of electrons under realistic conditions in GaAs semiconductors. The effective Hamiltonian takes Landau-level mixing into account to lowest order perturbatively in κ, the ratio of the Coulomb energy scale to the cyclotron gap. We also incorporate the nonzero width w of the quantum-well and subband mixing. We find the ground state in both the torus and spherical geometries as a function of κ and w. To sort out the nontrivial competition between candidate ground states, we analyze the following four criteria: its overlap with trial wave functions, the magnitude of energy gaps, the sign of the expectation value of an order parameter for particle-hole symmetry breaking, and the entanglement spectrum. We conclude that the ground state is in the universality class of the Moore-Read Pfaffian state, rather than the anti-Pfaffian, for κ<κ_{c}(w, where κ_{c}(w is a w-dependent critical value 0.6≲κ_{c}(w≲1. We observe that both Landau-level mixing and nonzero width suppress the excitation gap, but Landau-level mixing has a larger effect in this regard. Our findings have important implications for the identification of non-Abelian fractional quantum Hall states.
Energy Technology Data Exchange (ETDEWEB)
Avdonin, A., E-mail: avdonin@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Skupiński, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Grasza, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa (Poland)
2016-02-15
A simple description of the Hall effect in the hopping regime of conductivity in semiconductors is presented. Expressions for the Hall coefficient and Hall mobility are derived by considering averaged equilibrium electron transport in a single triangle of localization sites in a magnetic field. Dependence of the Hall coefficient is analyzed in a wide range of temperature and magnetic field values. Our theoretical result is applied to our experimental data on temperature dependence of Hall effect and Hall mobility in ZnO. - Highlights: • Expressions for Hall coefficient and mobility for hopping conductivity are derived. • Theoretical result is compared with experimental curves measured on ZnO. • Simultaneous action of free and hopping conduction channels is considered. • Non-linearity of hopping Hall coefficient is predicted.
A many-body generalization of the Z2 topological invariant for the quantum spin Hall effect
Lee, Sung-Sik; Ryu, Shinsei
2008-03-01
We propose a many-body generalization of the Z2 topological invariant for the quantum spin Hall insulator, which does not rely on single-particle band structures. The invariant is derived as a topological obstruction that distinguishes topologically distinct many-body ground states on a torus. It is also expressed as a Wilson-loop of the SU(2) Berry gauge field, which is quantized due to the time-reversal symmetry.
Bason, Y.; Klein, L.; Yau, J. -B.; Hong, X.; Hoffman, J.; Ahn, C. H.
2005-01-01
We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.
Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet.
Hennel, Szymon; Braem, Beat A; Baer, Stephan; Tiemann, Lars; Sohi, Pirouz; Wehrli, Dominik; Hofmann, Andrea; Reichl, Christian; Wegscheider, Werner; Rössler, Clemens; Ihn, Thomas; Ensslin, Klaus; Rudner, Mark S; Rosenow, Bernd
2016-04-01
In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.
Charge and Current in the Quantum Hall Matrix Model
2003-01-01
We extend the quantum Hall matrix model to include couplings to external electric and magnetic fields. The associated current suffers from matrix ordering ambiguities even at the classical level. We calculate the linear response at low momenta -- this is unambigously defined. In particular, we obtain the correct fractional quantum Hall conductivity, and the expected density modulations in response to a weak and slowly varying magnetic field. These results show that the classical quantum Hall ...
Quantized photonic spin Hall effect in graphene
Cai, Liang; Liu, Mengxia; Chen, Shizhen; Liu, Yachao; Shu, Weixing; Luo, Hailu; Wen, Shuangchun
2017-01-01
We examine the photonic spin Hall effect (SHE) in a graphene-substrate system with the presence of an external magnetic field. In the quantum Hall regime, we demonstrate that the in-plane and transverse spin-dependent splittings in the photonic SHE exhibit different quantized behaviors. The quantized SHE can be described as a consequence of a quantized geometric phase (Berry phase), which corresponds to the quantized spin-orbit interaction. Furthermore, an experimental scheme based on quantum weak value amplification is proposed to detect the quantized SHE in the terahertz frequency regime. By incorporating the quantum weak measurement techniques, the quantized photonic SHE holds great promise for detecting quantized Hall conductivity and the Berry phase. These results may bridge the gap between the electronic SHE and photonic SHE in graphene.
Light-induced electron localization in a quantum Hall system
Arikawa, T.; Hyodo, K.; Kadoya, Y.; Tanaka, K.
2017-07-01
An insulating bulk state is a prerequisite for the protection of topological edge states. In quantum Hall systems, the thermal excitation of delocalized electrons is the main route to breaking bulk insulation. In equilibrium, the only way to achieve a clear bulk gap is to use a high-quality crystal under high magnetic field at low temperature. However, bulk conduction could also be suppressed in a system driven out of equilibrium such that localized states in the Landau levels are selectively occupied. Here we report a transient suppression of bulk conduction induced by terahertz wave excitation between the Landau levels in a GaAs quantum Hall system. Strikingly, the Hall resistivity almost reaches the quantized value at a temperature where the exact quantization is normally disrupted by thermal fluctuations. The electron localization is realized by the long-range potential fluctuations, which are a unique and inherent feature of quantum Hall systems. Our results demonstrate a new means of effecting dynamical control of topology by manipulating bulk conduction using light.
Mini array of quantum Hall devices based on epitaxial graphene
Energy Technology Data Exchange (ETDEWEB)
Novikov, S.; Lebedeva, N. [Department of Micro and Nanosciences, Aalto University, Micronova, Tietotie 3, Espoo (Finland); Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, 02044 VTT (Finland)
2016-05-07
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.
Q-balls of Quasi-particles in a (2,0)-theory model of the Fractional Quantum Hall Effect
Ganor, Ori J; Moore, Nathan; Sun, Hao-Yu; Tan, H S; Torres-Chicon, Nesty R
2014-01-01
A toy model of the fractional quantum Hall effect appears as part of the low-energy description of the Coulomb branch of the $A_1$ (2,0)-theory formulated on $(S^1\\times R^2)/Z_k$, where the generator of $Z_k$ acts as a combination of translation on $S^1$ and rotation by $2\\pi/k$ on $R^2$. At low-energy the configuration is described in terms of a 4+1D Super-Yang-Mills theory on a cone ($R^2/Z_k$) with additional 2+1D degrees of freedom at the tip of the cone that include fractionally charged particles. These fractionally charged quasi-particles are BPS strings of the (2,0)-theory wrapped on short cycles. We analyze the large $k$ limit, where a smooth cigar-geometry provides an alternative description. In this framework a W-boson can be modeled as a bound state of $k$ quasi-particles. The W-boson becomes a Q-ball, and it can be described as a soliton solution of Bogomolnyi monopole equations on a certain auxiliary curved space. We show that axisymmetric solutions of these equations correspond to singular maps...
Wu, Menghao; Wang, Zhijun; Liu, Junwei; Li, Wenbin; Fu, Huahua; Sun, Lei; Liu, Xin; Pan, Minghu; Weng, Hongming; Dincă, Mircea; Fu, Liang; Li, Ju
2017-03-01
Bandstructure with Dirac cones gives rise to massless Dirac fermions with rich physics, and here we predict rich cone properties in M 3C12S12 and M 3C12O12, where M = Zn, Cd, Hg, Be, or Mg based on recently synthesized Ni3C12S12—class 2D metal-organic frameworks (MOFs). For M 3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n (electron) and p (hole) type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels at the same k-point akin to spin-channels in spintronics, rendering ‘conetronics’ device possible. For M 3C12O12, together with conjugated metal-tricatecholate polymers M 3(HHTP)2, the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin/cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin-orbit coupling like Cu3C12O12. Compounds of M 3C12S12 and M 3C12O12 with different M, can be used to build spin/cone-selecting heterostructure devices tunable by strain or electrostatic gating, suggesting their potential applications in spintroincs/conetronics.
Quantum spin Hall effect and spin-charge separation in a kagome lattice
Energy Technology Data Exchange (ETDEWEB)
Wang Zhigang; Zhang Ping, E-mail: zhang_ping@iapcm.ac.c [LCP, Institute of Applied Physics and Computational Mathematics, PO Box 8009, Beijing 100088 (China)
2010-04-15
A two-dimensional kagome lattice is theoretically investigated within a simple tight-binding model, which includes the nearest-neighbor hopping term and the intrinsic spin-orbit interaction between the next nearest neighbors. By using the topological winding properties of the spin-edge states on the complex-energy Riemann surface, the spin Hall conductance is obtained to be quantized as -e/2{pi} (e/2{pi}) in insulating phases. This result is consistent with the numerical linear-response calculation and the Z{sub 2} topological invariance analysis. When the sample boundaries are connected in twist, by which two defects with {pi} flux are introduced, we obtain the spin-charge separated solitons at 1/3 (or 2/3) filling.
Pan, Wei; Howell, Stephen W.; Ross, Anthony Joseph; Ohta, Taisuke; Friedmann, Thomas A.
2010-12-01
We report the observation of the integer quantum Hall states at Landau level fillings of ν =2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared via argon-assisted graphitization. The two-dimensional electron gas exhibits a low-temperature (at 4 K) carrier mobility of ˜14 000 cm2/V s at the electron density of 6.1×1011 cm-2. Furthermore, the sheet resistance obtained from four-probe measurements across the whole area (12×6 mm2) of another specimen grown under similar condition displays roughly uniform values (˜1600 Ω/square), suggesting that the macroscopic steps and accompanying multilayer graphene domains play a minor role in the low-temperature electronic transport.
Energy Technology Data Exchange (ETDEWEB)
Li Juan; Wang Yifei; Gong Changde, E-mail: yfwang_nju@hotmail.com [Center for Statistical and Theoretical Condensed Matter Physics, and Department of Physics, Zhejiang Normal University, Jinhua 321004 (China)
2011-04-20
We consider the tight-binding models of electrons on a two-dimensional triangular lattice and kagome lattice under staggered modulated magnetic fields. Such fields have two components: a uniform-flux part with strength {phi}, and a staggered-flux part with strength {Delta}{phi}. Various properties of the Hall conductances and Hofstadter butterflies are studied. When {phi} is fixed, variation of {Delta}{phi} leads to the quantum Hall transitions and Chern numbers of Landau subbands being redistributed between neighboring pairs. The energy spectra with nonzero {Delta}{phi}s have similar fractal structures but quite different energy gaps compared with the original Hofstadter butterflies of {Delta}{phi} = 0. Moreover, the fan-like structure of Landau levels in the low magnetic field region is also modified appreciably by {Delta}{phi}.
Twisted CFT and bilayer Quantum Hall systems
Cristofano, G; Naddeo, A
2003-01-01
We identify the impurity interactions of the recently proposed CFT description of a bilayer Quantum Hall system at filling nu =m/(pm+2) in Mod. Phys. Lett. A 15 (2000) 1679. Such a CFT is obtained by m-reduction on the one layer system, with a resulting pairing symmetry and presence of quasi-holes. For the m=2 case boundary terms are shown to describe an impurity interaction which allows for a localized tunnel of the Kondo problem type. The presence of an anomalous fixed point is evidenced at finite coupling which is unstable with respect to unbalance and flows to a vacuum state with no quasi-holes.
Current correlations in quantum spin Hall insulators.
Schmidt, Thomas L
2011-08-26
We consider a four-terminal setup of a two-dimensional topological insulator (quantum spin Hall insulator) with local tunneling between the upper and lower edges. The edge modes are modeled as helical Luttinger liquids and the electron-electron interactions are taken into account exactly. Using perturbation theory in the tunneling, we derive the cumulant generating function for the interedge current. We show that different possible transport channels give rise to different signatures in the current noise and current cross correlations, which could be exploited in experiments to elucidate the interplay between electron-electron interactions and the helical nature of the edge states.
Novel optical probe for quantum Hall system
Indian Academy of Sciences (India)
Biswajit Karmakar; Brij Mohan Arora
2006-07-01
Surface photovoltage (SPV) spectroscopy has been used for the first time to explore Landau levels of a two-dimensional electron gas (2DEG) in modulation doped InP/InGaAs/InP QW in the quantum Hall regime. The technique gives spectroscopically distinct signals from the bulk Landau levels and the edge states. Evolution of the bulk Landau levels and the edge electronic states is investigated at 2.0 K for magnetic field up to 8 T using SPV spectroscopy.
Quantum inferring acausal structures and the Monty Hall problem
Kurzyk, Dariusz; Glos, Adam
2016-09-01
This paper presents a quantum version of the Monty Hall problem based upon the quantum inferring acausal structures, which can be identified with generalization of Bayesian networks. Considered structures are expressed in formalism of quantum information theory, where density operators are identified with quantum generalization of probability distributions. Conditional relations between quantum counterpart of random variables are described by quantum conditional operators. Presented quantum inferring structures are used to construct a model inspired by scenario of well-known Monty Hall game, where we show the differences between classical and quantum Bayesian reasoning.
2015-01-01
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8 - 12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to ...
Mani, Arjun; Benjamin, Colin
2016-04-13
On the surface of 2D topological insulators, 1D quantum spin Hall (QSH) edge modes occur with Dirac-like dispersion. Unlike quantum Hall (QH) edge modes, which occur at high magnetic fields in 2D electron gases, the occurrence of QSH edge modes is due to spin-orbit scattering in the bulk of the material. These QSH edge modes are spin-dependent, and chiral-opposite spins move in opposing directions. Electronic spin has a larger decoherence and relaxation time than charge. In view of this, it is expected that QSH edge modes will be more robust to disorder and inelastic scattering than QH edge modes, which are charge-dependent and spin-unpolarized. However, we notice no such advantage accrues in QSH edge modes when subjected to the same degree of contact disorder and/or inelastic scattering in similar setups as QH edge modes. In fact we observe that QSH edge modes are more susceptible to inelastic scattering and contact disorder than QH edge modes. Furthermore, while a single disordered contact has no effect on QH edge modes, it leads to a finite charge Hall current in the case of QSH edge modes, and thus a vanishing of the pure QSH effect. For more than a single disordered contact while QH states continue to remain immune to disorder, QSH edge modes become more susceptible--the Hall resistance for the QSH effect changes sign with increasing disorder. In the case of many disordered contacts with inelastic scattering included, while quantization of Hall edge modes holds, for QSH edge modes a finite charge Hall current still flows. For QSH edge modes in the inelastic scattering regime we distinguish between two cases: with spin-flip and without spin-flip scattering. Finally, while asymmetry in sample geometry can have a deleterious effect in the QSH case, it has no impact in the QH case.
On-Chip Microwave Quantum Hall Circulator
Mahoney, A. C.; Colless, J. I.; Pauka, S. J.; Hornibrook, J. M.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.; Doherty, A. C.; Reilly, D. J.
2017-01-01
Circulators are nonreciprocal circuit elements that are integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their nonreciprocity arises from the interference of microwaves over the centimeter scale of the signal wavelength, in the presence of bulky magnetic media that breaks time-reversal symmetry. Here, we realize a completely passive on-chip microwave circulator with size 1 /1000 th the wavelength by exploiting the chiral, "slow-light" response of a two-dimensional electron gas in the quantum Hall regime. For an integrated GaAs device with 330 μ m diameter and about 1-GHz center frequency, a nonreciprocity of 25 dB is observed over a 50-MHz bandwidth. Furthermore, the nonreciprocity can be dynamically tuned by varying the voltage at the port, an aspect that may enable reconfigurable passive routing of microwave signals on chip.
Geometric Defects in Quantum Hall States
Gromov, Andrey
2016-01-01
We describe a geometric (or gravitational) analogue of the Laughlin quasiholes in the fractional quantum Hall states. Analogously to the quasiholes these defects can be constructed by an insertion of an appropriate vertex operator into the conformal block representation of a trial wavefunction, however, unlike the quasiholes these defects are extrinsic and do not correspond to true excitations of the quantum fluid. We construct a wavefunction in the presence of such defects and explain how to assign an electric charge and a spin to each defect, and calculate the adiabatic, non-abelian statistics of the defects. The defects turn out to be equivalent to the genons in that their adiabatic exchange statistics can be described in terms of representations of the mapping class group of an appropriate higher genus Riemann surface. We present a general construction that, in principle, allows to calculate the statistics of $\\mathbb Z_n$ genons for any "parent" topological phase. We illustrate the construction on the ex...
Fractional Quantization of the Hall Effect
Laughlin, R. B.
1984-02-27
The Fractional Quantum Hall Effect is caused by the condensation of a two-dimensional electron gas in a strong magnetic field into a new type of macroscopic ground state, the elementary excitations of which are fermions of charge 1/m, where m is an odd integer. A mathematical description is presented.
Quantum Hall states stabilized in semi-magnetic bilayers of topological insulators
Yoshimi, R.; Yasuda, K.; Tsukazaki, A.; Takahashi, K. S.; Nagaosa, N.; Kawasaki, M.; Tokura, Y.
2015-01-01
By breaking the time-reversal symmetry in three-dimensional topological insulators with the introduction of spontaneous magnetization or application of magnetic field, the surface states become gapped, leading to quantum anomalous Hall effect or quantum Hall effect, when the chemical potential locates inside the gap. Further breaking of inversion symmetry is possible by employing magnetic topological insulator heterostructures that host non-degenerate top and bottom surface states. Here we demonstrate the tailored-material approach for the realization of robust quantum Hall states in the bilayer system, in which the cooperative or cancelling combination of the anomalous and ordinary Hall responses from the respective magnetic and non-magnetic layers is exemplified. The appearance of quantum Hall states at filling factor 0 and +1 can be understood by the relationship of energy band diagrams for the two independent surface states. The designable heterostructures of magnetic topological insulator may explore a new arena for intriguing topological transport and functionality. PMID:26497065
Thermal Hall Effect of Magnons
Murakami, Shuichi; Okamoto, Akihiro
2017-01-01
We review recent developments in theories and experiments on the magnon Hall effect. We derive the thermal Hall conductivity of magnons in terms of the Berry curvature of magnonic bands. In addition to the Dzyaloshinskii-Moriya interaction, we show that the dipolar interaction can make the Berry curvature nonzero. We mainly discuss theoretical aspects of the magnon Hall effect and related theoretical works. Experimental progress in this field is also mentioned.
Gapless modes of fractional quantum Hall edges: a Hamiltonian study
Nguyen, Hoang; Joglekar, Yogesh; Murthy, Ganpathy
2004-03-01
We study the collective modes of the fractional quantum Hall edge states using the Hamiltonian formalism [1]. In this theory, the composite fermions are fully interacting; the collective modes are obtained within a conserving approximation which respects the constraints [2]. We present the gapless edge-mode dispersions at 1/3 and 2/5 filling fractions of unreconstructed and reconstructed edges. The dispersions are found to be nonlinear due to the variation of the effective magnetic field on the composite fermions. The implications of our study to the tunneling experiments into the edge of a fractional quantum Hall system [3] are discussed*. 1. R. Shankar and G. Murthy, Phys. Rev. Lett. 79, 4437 (1997). 2. G. Murthy, Phys. Rev. B 64, 195310 (2001). 3. A.M.Chang et. al., Phys. Rev. Lett. 86, 143 (2000). * Work supported by the NSF, Grant number DMR 031176.
Fractional quantum Hall states of bosons on cones
Wu, Ying-Hai; Tu, Hong-Hao; Sreejith, G. J.
2017-09-01
Motivated by a recent experiment, which synthesizes Landau levels for photons on cones [Schine et al., Nature (London) 534, 671 (2016), 10.1038/nature17943], and more generally the interest in understanding gravitational responses of quantum Hall states, we study fractional quantum Hall states of bosons on cones. A variety of trial wave functions for conical systems are constructed and compared with exact diagonalization results. The tip of a cone is a localized geometrical defect with singular curvature, which can modify the density profiles of quantum Hall states. The density profiles on cones can be used to extract some universal information about quantum Hall states. The values of certain quantities are computed numerically using the density profiles of some quantum Hall states and they agree with analytical predictions.
Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
Wees, B.J. van; Meijer, G.I.; Kuipers, J.J.; Klapwijk, T.M.; Graaf, W. van de; Borghs, G.
1995-01-01
We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb quantum wells. The filling factor Ng underneath a gate electrode was reduced relative to the bulk filling factor Nb. For Ng
Experiments on Quantum Hall Topological Phases in Ultra Low Temperatures
Energy Technology Data Exchange (ETDEWEB)
Du, Rui-Rui [Rice Univ., Houston, TX (United States). Dept. of Physics and Astronomy
2015-02-14
This project is to cool electrons in semiconductors to extremely low temperatures and to study new states of matter formed by low-dimensional electrons (or holes). At such low temperatures (and with an intense magnetic field), electronic behavior differs completely from ordinary ones observed at room temperatures or regular low temperature. Studies of electrons at such low temperatures would open the door for fundamental discoveries in condensed matter physics. Present studies have been focus on topological phases in the fractional quantum Hall effect in GaAs/AlGaAs semiconductor heterostructures, and the newly discovered (by this group) quantum spin Hall effect in InAs/GaSb materials. This project consists of the following components: 1) Development of efficient sample cooling techniques and electron thermometry: Our goal is to reach 1 mK electron temperature and reasonable determination of electron temperature; 2) Experiments at ultra-low temperatures: Our goal is to understand the energy scale of competing quantum phases, by measuring the temperature-dependence of transport features. Focus will be placed on such issues as the energy gap of the 5/2 state, and those of 12/5 (and possible 13/5); resistive signature of instability near 1/2 at ultra-low temperatures; 3) Measurement of the 5/2 gaps in the limit of small or large Zeeman energies: Our goal is to gain physics insight of 5/2 state at limiting experimental parameters, especially those properties concerning the spin polarization; 4) Experiments on tuning the electron-electron interaction in a screened quantum Hall system: Our goal is to gain understanding of the formation of paired fractional quantum Hall state as the interaction pseudo-potential is being modified by a nearby screening electron layer; 5) Experiments on the quantized helical edge states under a strong magnetic field and ultralow temperatures: our goal is to investigate both the bulk and edge states in a quantum spin Hall insulator under time
Real-space imaging of fractional quantum Hall liquids.
Hayakawa, Junichiro; Muraki, Koji; Yusa, Go
2013-01-01
Electrons in semiconductors usually behave like a gas--as independent particles. However, when confined to two dimensions under a perpendicular magnetic field at low temperatures, they condense into an incompressible quantum liquid. This phenomenon, known as the fractional quantum Hall (FQH) effect, is a quantum-mechanical manifestation of the macroscopic behaviour of correlated electrons that arises when the Landau-level filling factor is a rational fraction. However, the diverse microscopic interactions responsible for its emergence have been hidden by its universality and macroscopic nature. Here, we report real-space imaging of FQH liquids, achieved with polarization-sensitive scanning optical microscopy using trions (charged excitons) as a local probe for electron spin polarization. When the FQH ground state is spin-polarized, the triplet/singlet intensity map exhibits a spatial pattern that mirrors the intrinsic disorder potential, which is interpreted as a mapping of compressible and incompressible electron liquids. In contrast, when FQH ground states with different spin polarization coexist, domain structures with spontaneous quasi-long-range order emerge, which can be reproduced remarkably well from the disorder patterns using a two-dimensional random-field Ising model. Our results constitute the first reported real-space observation of quantum liquids in a class of broken symmetry state known as the quantum Hall ferromagnet.
Bending strain engineering in quantum spin hall system for controlling spin currents
Huang, Bing; Jin, Kyung-Hwan; Cui, Bin; Zhai, Feng; Mei, Jiawei; Liu, Feng
2017-06-01
Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. Here the concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. We show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Furthermore, the curved quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.
Indian Academy of Sciences (India)
Andrew Das Arulsamy
2015-07-01
We derive the trial Hall resistance formula for the quantum Hall metals to address both the integer and fractional quantum Hall effects. Within the degenerate (and crossed) Landau levels, and in the presence of changing magnetic field strength, one can invoke two physical processes responsible for the electron conduction and quantum Hall effects in Fermi metals. One of the process requires the Pancharatnam wavefunction transformation, while the second involves electron transfer between two orthogonalized wavefunctions (within the degenerate and crossed Landau levels). We discuss the relevant physical postulates with respect to these physical processes to qualitatively reproduce the measured Hall resistance’s zigzag curve for both the integer and the fractional filling factors. Along the way, we give out some evidence to contradict the postulates with experiments.
Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator
Kandala, Abhinav; Richardella, Anthony; Kempinger, Susan; Liu, Chao-Xing; Samarth, Nitin
2015-07-01
When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)2-xTe3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer-Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization.
The enigma of the ν=2+3/8 fractional quantum Hall effect
DEFF Research Database (Denmark)
Hutasoit, Jimmy; nrc762, nrc762; Mukherjee, Sutirtha
2017-01-01
function. Its excitations are non-Abelian anyons similar to those of the well studied Pfaffian state at 5/2, but its wave function has a more complex structure. Using the effective edge theory, we make predictions for various measurable quantities that should enable a confirmation of the underlying...
Peterson, Michael
2009-03-01
The fractional quantum Hall effect (FQHE) in the second orbital Landau level at even-denominator filling factor 5/2 remains mysterious and is currently motivating many scientists not only because of its connection to a possible implementation of a fault tolerant topological quantum computer (Das Sarma et al., PRL 94, 166802(2005)). In this work, we theoretically consider the effect of the quasi-two-dimensional nature of the experimental fractional quantum Hall systems on a number of FQHE states in the lowest three orbital Landau levels. Our primary result is that the finite width of the quasi-two-dimensional systems produce a physical environment sufficient to stabilize the Moore-Read Pfaffian state thought to describe the FQHE at filling factor 5/2. This conclusion is based on exact calculations performed in the spherical and torus geometries, studying wave function overlap and ground state degeneracy. Furthermore, our results open the possibility of creating optimal experimental systems where the 5/2 FQHE state would more likely be described by the Moore-Read Pfaffian. We also discuss the role of the three-body interaction Hamiltonian that produces the Moore-Read Pfaffian as an exact ground state and particle-hole symmetry in the FQHE at 5/2. We acknowledge support from Microsoft Project Q. Work done in collaboration with Sankar Das Sarma, Thierry Jolicoeur, and Kwon Park.
Edge physics of the quantum spin Hall insulator from a quantum dot excited by optical absorption.
Vasseur, Romain; Moore, Joel E
2014-04-11
The gapless edge modes of the quantum spin Hall insulator form a helical liquid in which the direction of motion along the edge is determined by the spin orientation of the electrons. In order to probe the Luttinger liquid physics of these edge states and their interaction with a magnetic (Kondo) impurity, we consider a setup where the helical liquid is tunnel coupled to a semiconductor quantum dot that is excited by optical absorption, thereby inducing an effective quantum quench of the tunneling. At low energy, the absorption spectrum is dominated by a power-law singularity. The corresponding exponent is directly related to the interaction strength (Luttinger parameter) and can be computed exactly using boundary conformal field theory thanks to the unique nature of the quantum spin Hall edge.
Quantum Hall Effect and Different Zero-Energy Modes of Graphene
Institute of Scientific and Technical Information of China (English)
M.R.Setare; D.Jahani
2011-01-01
@@ The effect of an inhomogeneous magnetic field,which varies inversely with distance on the ground state energy level of graphene,is studied.We analytically show that graphene under the influence of a magnetic field aris-ing from a straight long current-carrying wire(proportional to the magnetic field from carbon nanotubes and nanowires)exhibits zero-energy solutions and find that contrary to the case of a uniform magnetic field for which the zero-energy modes show the localization of electrons entirely on just one sublattice corresponding to a single valley Hamiltonian,zero-energy solutions in this case reveal that the probabilities for the electrons to be on both sublattices,say A and B,are the same.%The effect of an inhomogeneous magnetic Geld, which varies inversely with distance on the ground state energy level of graphene, is studied. We analytically show that graphene under the influence of a magnetic field arising from a straight long current-carrying wire (proportional to the magnetic Reid from carbon nanotubes and nanowires) exhibits zero-energy solutions and find that contrary to the case of a uniform magnetic field for which the zero-energy modes show the localization of electrons entirely on just one sublattice corresponding to a single valley Hamiltonian, zero-energy solutions in this case reveal that the probabilities for the electrons to be on both sublattices, say A and B, are the same.
Murthy, Ganpathy
2000-01-01
It is well known that the ν = 2/5 state is unpolarized at zero Zeeman energy, while it is fully polarized at large Zeeman energies. A novel state with a charge/spin density wave order for composite fermions is proposed to exist at intermediate values of the Zeeman coupling for ν = 2/5. This state has half the maximum possible polarization, and can be extended to other incompressible fractions. A Hartree-Fock calculation based on the new approach for all fractional quantum Hall states developed by R. Shankar and the author is used to demonstrate the stability of this state to single-particle excitations and to compute gaps. A very recent experiment shows direct evidence for this state.
Murthy
2000-01-10
It is well known that the nu = 2/5 state is unpolarized at zero Zeeman energy, while it is fully polarized at large Zeeman energies. A novel state with a charge/spin density wave order for composite fermions is proposed to exist at intermediate values of the Zeeman coupling for nu = 2/5. This state has half the maximum possible polarization, and can be extended to other incompressible fractions. A Hartree-Fock calculation based on the new approach for all fractional quantum Hall states developed by R. Shankar and the author is used to demonstrate the stability of this state to single-particle excitations and to compute gaps. A very recent experiment shows direct evidence for this state.
Two-phonon scattering in graphene in the quantum Hall regime
Alexeev, A. M.; Hartmann, R. R.; Portnoi, M. E.
2015-01-01
One of the most distinctive features of graphene is its huge inter-Landau-level splitting in experimentally attainable magnetic fields which results in the room-temperature quantum Hall effect. In this paper we calculate the longitudinal conductivity induced by two-phonon scattering in graphene in a quantizing magnetic field at elevated temperatures. It is concluded that the purely phonon-induced scattering, negligible for conventional semiconductor heterostructures under quantum Hall conditi...
Gaussian free fields at the integer quantum Hall plateau transition
Energy Technology Data Exchange (ETDEWEB)
Bondesan, R., E-mail: roberto.bondesan@phys.ox.ac.uk [Rudolf Peierls Centre for Theoretical Physics, 1 Keble Road, Oxford OX1 3NP (United Kingdom); Wieczorek, D.; Zirnbauer, M.R. [Institut für Theoretische Physik, Universität zu Köln, Zülpicher Straße 77, 50937 Köln (Germany)
2017-05-15
In this work we put forward an effective Gaussian free field description of critical wavefunctions at the transition between plateaus of the integer quantum Hall effect. To this end, we expound our earlier proposal that powers of critical wave intensities prepared via point contacts behave as pure scaling fields obeying an Abelian operator product expansion. Our arguments employ the framework of conformal field theory and, in particular, lead to a multifractality spectrum which is parabolic. We also derive a number of old and new identities that hold exactly at the lattice level and hinge on the correspondence between the Chalker–Coddington network model and a supersymmetric vertex model.
Laughlin's argument for the quantized thermal Hall effect
Nakai, Ryota; Nomura, Kentaro
2016-01-01
We extend Laughlin's magnetic-flux-threading argument to the quantized thermal Hall effect. A proper analogue of Laughlin's adiabatic magnetic-flux threading process for the case of the thermal Hall effect is given in terms of an external gravitational field. From the perspective of the edge theories of quantum Hall systems, the quantized thermal Hall effect is closely tied to the breakdown of large diffeomorphism invariance, that is, a global gravitational anomaly. In addition, we also give an argument from the bulk perspective in which a free energy, decomposed into its Fourier modes, is adiabatically transferred under an adiabatic process involving external gravitational perturbations.
Inertial-Hall effect: the influence of rotation on the Hall conductivity
Brandão, Julio E.; Moraes, F.; Cunha, M. M.; Lima, Jonas R. F.; Filgueiras, C.
Inertial effects play an important role in classical mechanics but have been largely overlooked in quantum mechanics. Nevertheless, the analogy between inertial forces on mass particles and electromagnetic forces on charged particles is not new. In this paper, we consider a rotating non-interacting planar two-dimensional electron gas with a perpendicular uniform magnetic field and investigate the effects of the rotation in the Hall conductivity. The rotation introduces a shift and a split in the Landau levels. As a consequence of the break of the degeneracy, the counting of the states fully occupied below the Fermi energy increases, tuning the Hall quantization steps. The rotation also changes the quantum Hall plateau widths. Additionally, we find the Hall quantization steps as a function of rotation at a fixed value of the magnetic field.
Inertial-Hall effect: the influence of rotation on the Hall conductivity
Directory of Open Access Journals (Sweden)
Julio E. Brandão
2015-01-01
Full Text Available Inertial effects play an important role in classical mechanics but have been largely overlooked in quantum mechanics. Nevertheless, the analogy between inertial forces on mass particles and electromagnetic forces on charged particles is not new. In this paper, we consider a rotating non-interacting planar two-dimensional electron gas with a perpendicular uniform magnetic field and investigate the effects of the rotation in the Hall conductivity. The rotation introduces a shift and a split in the Landau levels. As a consequence of the break of the degeneracy, the counting of the states fully occupied below the Fermi energy increases, tuning the Hall quantization steps. The rotation also changes the quantum Hall plateau widths. Additionally, we find the Hall quantization steps as a function of rotation at a fixed value of the magnetic field.
A study on the quantum Hall effect by using the MSae system of units%运用MSae单位制工具剖析量子霍尔效应
Institute of Scientific and Technical Information of China (English)
皮可慰
2014-01-01
Quantum Hall Effect can be seen at the electron’s circular motion of a hydrogen atom. Analysis of Quantum Hall Effect from the angle of interaction between individual quantum is beneficial to uncover the occurrence mechanism of Quantum Hall Effect. As resonance is the fundamental of formation of Quantum Hall Effect, the use of frequency to replace energy can simplify physical units, which can directly demonstrate frequency, wave speed, and wave length to the site of physical quantity analysis, therefore facilitates the research on resonance mechanism of individual quantum.%量子霍尔效应可以在一个氢原子的电子圆周运动中显示，从个别量子之间相互作用角度剖析量子霍尔效应，有助于发现量子霍尔效应的发生机制。共振是形成量子霍尔效应的基础。使用频率替代能量可以简化物理单位，将频率、波速、波长直接体现在对物理量分析的现场，有助于个别量子之间共振机制的研究。
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
Institute of Scientific and Technical Information of China (English)
YU Rui
2011-01-01
@@ The Hall effect, the anomalous Hall effect (AHE) and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively.The AHE, in which a voltage transverse to the electric current appears even in the absence of an external magnetic field, was first detected in ferromagnetic (FM) metals in 1881 and later found to arise from the spin-orbit coupling (SOC) between the current and magnetic moments.Recent progress on the mechanism of AHE has established a link between the AHE and the topological nature of the Hall current by adopting the Berry-phase concepts in close analogy to the intrinsic spin Hall effect.Given the experimental discovery of the quantum Hall and the quantum spin Hall effects, it is natural to ask whether the AHE can also be quantized.In a quantized anomalous Hall (QAH) insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field.
Planar Hall effect bridge magnetic field sensors
DEFF Research Database (Denmark)
Henriksen, A.D.; Dalslet, Bjarke Thomas; Skieller, D.H.
2010-01-01
Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can...... Hall effect bridge sensors....
2008-09-23
in Fig. 1. An alternating current source operating at frequency f1 is attached to contacts B and D with a respective lock-in amplifier monitoring...that floats the signal and a transconductance amplifier . The input voltage of each lock-in amplifier is composed of two signals: the Hall voltage at...alternating current sources operating at frequencies f1 and f2 respectively. VAC and VDB are lock-in amplifiers set for the reference frequencies f2 and f1
Nonlinear response of the quantum Hall system to a strong electromagnetic radiation
Avetissian, H. K.; Mkrtchian, G. F.
2016-12-01
We study nonlinear response of a quantum Hall system in semiconductor-hetero-structures via third harmonic generation process and nonlinear Faraday effect. We demonstrate that Faraday rotation angle and third harmonic radiation intensity have a characteristic Hall plateaus feature. These nonlinear effects remain robust against the significant broadening of Landau levels. We predict realization of an experiment through the observation of the third harmonic signal and Faraday rotation angle, which are within the experimental feasibility.
Pairing in Luttinger Liquids and Quantum Hall States
Kane, Charles L.; Stern, Ady; Halperin, Bertrand I.
2017-07-01
We study spinless electrons in a single-channel quantum wire interacting through attractive interaction, and the quantum Hall states that may be constructed by an array of such wires. For a single wire, the electrons may form two phases, the Luttinger liquid and the strongly paired phase. The Luttinger liquid is gapless to one- and two-electron excitations, while the strongly paired state is gapped to the former and gapless to the latter. In contrast to the case in which the wire is proximity coupled to an external superconductor, for an isolated wire there is no separate phase of a topological, weakly paired superconductor. Rather, this phase is adiabatically connected to the Luttinger liquid phase. The properties of the one-dimensional topological superconductor emerge when the number of channels in the wire becomes large. The quantum Hall states that may be formed by an array of single-channel wires depend on the Landau-level filling factors. For odd-denominator fillings ν =1 /(2 n +1 ), wires at the Luttinger phase form Laughlin states, while wires in the strongly paired phase form a bosonic fractional quantum Hall state of strongly bound pairs at a filling of 1 /(8 n +4 ). The transition between the two is of the universality class of Ising transitions in three dimensions. For even-denominator fractions ν =1 /2 n , the two single-wire phases translate into four quantum Hall states. Two of those states are bosonic fractional quantum Hall states of weakly and strongly bound pairs of electrons. The other two are non-Abelian quantum Hall states, which originate from coupling wires close to their critical point. One of these non-Abelian states is the Moore-Read state. The transitions between all of these states are of the universality class of Majorana transitions. We point out some of the properties that characterize the different phases and the phase transitions.
Quantum Hall fluids in the presence of topological defects
Iacomino, Patrizia; Naddeo, Adele
2013-01-01
We review our recent results on the physics of quantum Hall fluids at Jain and non conventional fillings within a general field theoretic framework. We focus on a peculiar conformal field theory (CFT), the one obtained by means of the m-reduction technique, and stress its power in describing strongly correlated low dimensional condensed matter systems in the presence of localized impurities or topological defects. By exploiting the notion of Morita equivalence for field theories on noncommutative two-tori and choosing rational values of the noncommutativity parameter, we find a general one-to-one correspondence between the m-reduced conformal field theory describing the quantum Hall fluid and an Abelian noncommutative field theory. As an example of application of the formalism, we study a quantum Hall bilayer at nonconventional fillings in the presence of a localized topological defect and briefly recall its boundary state structure corresponding to two different boundary conditions, the periodic as well as t...
Non-Abelian 3d Bosonization and Quantum Hall States
Radicevic, Djordje; Turner, Carl
2016-01-01
Bosonization dualities relate two different Chern-Simons-matter theories, with bosonic matter on one side replaced by fermionic matter on the other. We first describe a more general class of non-Abelian bosonization dualities. We then explore the non-relativistic physics of these theories in the quantum Hall regime. The bosonic theory lies in a condensed phase and admits vortices which are known to form a non-Abelian quantum Hall state. We ask how this same physics arises in the fermionic theory. We find that a condensed boson corresponds to a fully filled Landau level of fermions, while bosonic vortices map to fermionic holes. We confirm that the ground state of the two theories is indeed described by the same quantum Hall wavefunction.
Energy Technology Data Exchange (ETDEWEB)
Chandelier, F
2003-12-01
The quantum Hall effect appears in low temperature electron systems submitted to intense magnetic fields. Electrons are trapped in a thin layer ({approx} 100.10{sup -8} cm thick) at the interface between 2 semiconductors or between a semiconductor and an insulating material. This thesis presents 3 personal contributions to the physics of plane systems and particularly to quantum Hall effect systems. The first contribution is a topological approach, it involves the study of Landau's problem in a geometry nearing that of Hall effect experiments. A mathematical formalism has been defined and by using the Kubo's formula, the quantification of the Hall conductivity can be linked to the Chern class of threaded holes. The second contribution represents a phenomenological approach based on dual symmetries and particularly on modular symmetries. This contribution uses visibility diagrams that have already produced right predictions concerning resistivity curves or band structures. The introduction of a physical equivalence has allowed us to build a phase diagram for the quantum Hall effect at zero temperature. This phase diagram agrees with the experimental facts concerning : -) the existence of 2 insulating phases, -) direct transitions between an insulating phase and any Hall phase through integer or fractionary values of the filling factor ({nu}), -) selection rules, and -) classification of the Hall states and their distribution around a metal state. The third contribution concerns another phenomenological approach based on duality symmetries. We have considered a class of (2+1)-dimensional effective models with a Maxwell-Chern-Simons part that includes a non-locality. This non-locality implies the existence of a hidden duality symmetry with a Z{sub 2} component: z {yields} 1/z. This symmetry has allowed us to meet the results of the Fisher's law concerning the components of the resistivity tensor. (A.C.)
Topological Hall and spin Hall effects in disordered skyrmionic textures
Ndiaye, Papa Birame
2017-02-24
We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.
Magnetic topological insulator and quantum anomalous Hall effect%磁性拓扑绝缘体与量子反常霍尔效应
Institute of Scientific and Technical Information of China (English)
翁红明; 戴希; 方忠
2014-01-01
量子反常霍尔绝缘体，有时也被称为陈数绝缘体，是不同于普通绝缘体和拓扑绝缘体的一类新的二维绝缘体，该体系具有可被实验观测的特殊物理性质-量子反常霍尔效应。该体系的物态不能用朗道对称性破缺理论来描写，而要用到拓扑物态的概念。它的发现也经历了从反常霍尔效应的内秉物性阐释，到量子自旋霍尔效应与拓扑绝缘体的发现，再到磁性拓扑绝缘体的理论预测与实现，并最终成功实验观测的漫长过程。由于量子反常霍尔效应的实现不需要外加磁场，而此时样品的边缘态可以被看成一根无能耗的理想导线，因此人们对于其将来可能的应用充满了期待。本文将从理论的角度简单综述该领域的发展历程、基本概念、以及相关的材料系统。%Quantum anomalous Hall insulator, also called as Chern insulator, is a new two-dimensional insulator distinguished from normal insulator and topological insulator by possess-ing a special and experimentally observable physical property-quantum anomalous Hall effect (QAHE). This is a novel quantum state can not be described by the Landau symmetry breaking theory but by the concept of topology of band structure. Its discovery experienced a long his-tory: from the explanation of intrinsic contribution to anomalous Hall effect, to the discovery of quantum spin Hall effect and topological insulator, to the prediction and realization of magnetic topological insulator, and finally to the experimental observation of it. Since QAHE does not require external magnetic field and has dissipationless (without lost of kinetic energy that being transferred to thermal energy) conducting edge states which can be used as an ideal conducting wire, it is expected to have various potential applications in future. This paper gives a review of this field on its history, basic concepts and related materials from the theoretical point of view.
Color Ferromagnetism and Quantum Hall states in Quark Matter
Iwazaki, A
2003-01-01
We discuss a possibility of the presence of a stable color ferromagnetic state in SU(2) gauge theory of quark matter; a color magnetic field is spontaneously generated due tothe gluon's dynamics. The state arises between the hadronic state and the color superconducting state when the density of quarks is varied. Although the state has been known to have unstable modes, we show that unstable modes form quantum Hall states, in which the instability disappears. Namely, the quark matter possesses a stable phase with the ferromagnetic state and the quantum Hall state of gluons.
Fractional quantum Hall states of bosons on cones
Wu, Ying-Hai; Sreejith, G J
2016-01-01
Motivated by a recent experiment which synthesizes Landau levels for photons on cones (Schine {\\em et al.}, arXiv: 1511.07381), and more generally the interest in understanding gravitational responses of quantum Hall systems, we study fractional quantum Hall states of bosons on cones. We construct several trial wave functions and compare them with exact diagonalization results. The tip of a cone is a localized geometrical defect with singular curvature around which excessive charges accumulate. We study the density profiles of some states on cones and show that the excessive charges agree with analytical predictions.
Moiré assisted fractional quantum Hall state spectroscopy
Wu, Fengcheng; MacDonald, A. H.
2016-12-01
Intra-Landau level excitations in the fractional quantum Hall regime are not accessible via optical absorption measurements. We point out that optical probes are enabled by the periodic potentials produced by a moiré pattern. Our observation is motivated by the recent observations of fractional quantum Hall incompressible states in moiré-patterned graphene on a hexagonal boron nitride substrate, and is theoretically based on f -sum rule considerations supplemented by a perturbative analysis of the influence of the moiré potential on many-body states.
Chang, Cui-Zu; Zhao, Weiwei; Li, Jian; Jain, J. K.; Liu, Chaoxing; Moodera, Jagadeesh S.; Chan, Moses H. W.
2016-09-01
Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in the quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.
Hall effect accompanying a static skin effect
Energy Technology Data Exchange (ETDEWEB)
Volkenshtein, N.V.; Marchenkov, V.V.; Startsev, V.E.; Cherepanov, A.N.; Glin' skii, M.
1985-05-10
The Hall effect and the magnetoresistance of tungsten single crystals with rho/sub 293K//rho/sub 4.2K/ = 80 000 have been measured at 4.2 K in magnetic fields up to 150 kOe. The results reveal that a static skin effect gives rise to an anomalously pronounced increase in the Hall coefficient.
Chemical potential and compressibility of quantum Hall bilayer excitons,.
Energy Technology Data Exchange (ETDEWEB)
Skinner, Brian
2016-02-25
I consider a system of two parallel quantum Hall layers with total filling factor 0 or 1. When the distance between the layers is small enough, electrons and holes in opposite layers can form inter-layer excitons, which have a finite effective mass and interact via a dipole-dipole potential. I present results for the chemical potential u of the resulting bosonic system as a function of the exciton concentration n and the interlayer separation d. I show that both u and the interlayer capacitance have an unusual nonmonotonic dependence on d, owing to the interplay between an increasing dipole moment and an increasing effective mass with increasing d. Finally, I discuss the transition between the superfluid and Wigner crystal phases, which is shown to occur at d x n-1/10. Results are derived first via simple intuitive arguments, and then verified with more careful analytic derivations and numeric calculations.
Fragility of Nonlocal Edge-Mode Transport in the Quantum Spin Hall State
Mani, Arjun; Benjamin, Colin
2016-07-01
Nonlocal currents and voltages are better at withstanding the deleterious effects of dephasing than local currents and voltages in nanoscale systems. This hypothesis is known to be true in quantum Hall setups. We test this hypothesis in a four-terminal quantum spin Hall setup wherein we compare the local resistance measurement with the nonlocal one. In addition to inelastic-scattering-induced dephasing, we also test the resilience of the resistance measurements in the aforesaid setups to disorder and spin-flip scattering. We find the axiom that nonlocal resistance is less affected by the detrimental effects of disorder and dephasing to be untrue, in general, for the quantum spin Hall case. This has important consequences since it is widely communicated that nonlocal transport through edge channels in topological insulators have potential applications in low-power information processing.
Berry curvature and various thermal Hall effects
Zhang, Lifa
2016-10-01
Applying the approach of semiclassical wave packet dynamics, we study various thermal Hall effects where carriers can be electron, phonon, magnon, etc. A general formula of thermal Hall conductivity is obtained to provide an essential physics for various thermal Hall effects, where the Berry phase effect manifests naturally. All the formulas of electron thermal Hall effect, phonon Hall effect, and magnon Hall effect can be directly reproduced from the general formula. It is also found that the Strěda formula can not be directly applied to the thermal Hall effects, where only the edge magnetization contributes to the Hall effects. Furthermore, we obtain a combined formula for anomalous Hall conductivity, thermal Hall electronic conductivity and thermal Hall conductivity for electron systems, where the Berry curvature is weighted by a different function. Finally, we discuss particle magnetization and its relation to angular momentum of the carrier, change of which could induce a mechanical rotation; and possible experiments for thermal Hall effect associated with a mechanical rotation are also proposed.
Modulated phases of graphene quantum Hall polariton fluids
Pellegrino, Francesco M. D.; Giovannetti, Vittorio; MacDonald, Allan H.; Polini, Marco
2016-11-01
There is a growing experimental interest in coupling cavity photons to the cyclotron resonance excitations of electron liquids in high-mobility semiconductor quantum wells or graphene sheets. These media offer unique platforms to carry out fundamental studies of exciton-polariton condensation and cavity quantum electrodynamics in a regime, in which electron-electron interactions are expected to play a pivotal role. Here, focusing on graphene, we present a theoretical study of the impact of electron-electron interactions on a quantum Hall polariton fluid, that is a fluid of magneto-excitons resonantly coupled to cavity photons. We show that electron-electron interactions are responsible for an instability of graphene integer quantum Hall polariton fluids towards a modulated phase. We demonstrate that this phase can be detected by measuring the collective excitation spectra, which is often at a characteristic wave vector of the order of the inverse magnetic length.
Bosonization, coherent states and semiclassical quantum Hall skyrmions.
Dutta, Sreedhar B; Shankar, R
2008-07-09
We bosonize (2+1)-dimensional fermionic theory using coherent states. The gauge-invariant subspace of boson-Chern-Simons Hilbert space is mapped to fermionic Hilbert space. This subspace is then equipped with a coherent state basis. These coherent states are labelled by a dynamic spinor field. The label manifold could be assigned a physical meaning in terms of density and spin density. A path-integral representation of the evolution operator in terms of these physical variables is given. The corresponding classical theory when restricted to LLL is described by spin fluctuations alone and is found to be the NLSM with Hopf term. The formalism developed here is suitable to study quantum Hall skyrmions semiclassically and/or beyond the hydrodynamic limit. The effects of Landau level mixing or the presence of slowly varying external fields can also be easily incorporated.
Imaging of Coulomb-Driven Quantum Hall Edge States
Lai, Keji
2011-10-01
The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν=2 QHE state. © 2011 American Physical Society.
Geometry of quantum Hall states: Gravitational anomaly and transport coefficients
Energy Technology Data Exchange (ETDEWEB)
Can, Tankut, E-mail: tcan@scgp.stonybrook.edu [Simons Center for Geometry and Physics, Stony Brook University, Stony Brook, NY 11794 (United States); Laskin, Michael; Wiegmann, Paul B. [Department of Physics, University of Chicago, 929 57th St, Chicago, IL 60637 (United States)
2015-11-15
We show that universal transport coefficients of the fractional quantum Hall effect (FQHE) can be understood as a response to variations of spatial geometry. Some transport properties are essentially governed by the gravitational anomaly. We develop a general method to compute correlation functions of FQH states in a curved space, where local transformation properties of these states are examined through local geometric variations. We introduce the notion of a generating functional and relate it to geometric invariant functionals recently studied in geometry. We develop two complementary methods to study the geometry of the FQHE. One method is based on iterating a Ward identity, while the other is based on a field theoretical formulation of the FQHE through a path integral formalism.
Superconducting Analogue of the Parafermion Fractional Quantum Hall States
Directory of Open Access Journals (Sweden)
Abolhassan Vaezi
2014-07-01
Full Text Available Read-Rezayi Z_{k} parafermion wave functions describe ν=2+(k/kM+2 fractional quantum Hall (FQH states. These states support non-Abelian excitations from which protected quantum gates can be designed. However, there is no experimental evidence for these non-Abelian anyons to date. In this paper, we study the ν=2/k FQH-superconductor heterostructure and find the superconducting analogue of the Z_{k} parafermion FQH state. Our main tool is the mapping of the FQH into coupled one-dimensional chains, each with a pair of counterpropagating modes. We show that by inducing intrachain pairing and charge preserving backscattering with identical couplings, the one-dimensional chains flow into gapless Z_{k} parafermions when k<4. By studying the effect of interchain coupling, we show that every parafermion mode becomes massive except for the two outermost ones. Thus, we achieve a fractional topological superconductor whose chiral edge state is described by a Z_{k} parafermion conformal field theory. For instance, we find that a ν=2/3 FQH in proximity to a superconductor produces a Z_{3} parafermion superconducting state. This state is topologically indistinguishable from the non-Abelian part of the ν=12/5 Read-Rezayi state. Both of these systems can host Fibonacci anyons capable of performing universal quantum computation through braiding operations.
Generic superweak chaos induced by Hall effect.
Ben-Harush, Moti; Dana, Itzhack
2016-05-01
We introduce and study the "kicked Hall system" (KHS), i.e., charged particles periodically kicked in the presence of uniform magnetic (B) and electric (E) fields that are perpendicular to each other and to the kicking direction. We show that for resonant values of B and E and in the weak-chaos regime of sufficiently small nonintegrability parameter κ (the kicking strength), there exists a generic family of periodic kicking potentials for which the Hall effect from B and E significantly suppresses the weak chaos, replacing it by "superweak" chaos (SWC). This means that the system behaves as if the kicking strength were κ^{2} rather than κ. For E=0, SWC is known to be a classical fingerprint of quantum antiresonance, but it occurs under much less generic conditions, in particular only for very special kicking potentials. Manifestations of SWC are a decrease in the instability of periodic orbits and a narrowing of the chaotic layers, relative to the ordinary weak-chaos case. Also, for global SWC, taking place on an infinite "stochastic web" in phase space, the chaotic diffusion on the web is much slower than the weak-chaos one. Thus, the Hall effect can be relatively stabilizing for small κ. In some special cases, the effect is shown to cause ballistic motion for almost all parameter values. The generic global SWC on stochastic webs in the KHS appears to be the two-dimensional closest analog to the Arnol'd web in higher dimensional systems.
Owerre, S. A.
2016-07-01
Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κxy changes sign as a function of magnetic field or temperature on the kagome lattice, and κxy changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κxy has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T2 law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.
A two fluid description of the Quantum Hall Soliton
Energy Technology Data Exchange (ETDEWEB)
Freivogel, Ben [Stanford Univ., Stanford, CA (United States); Susskind, Leonard [Stanford Univ., Stanford, CA (United States); Toumbas, Nicolaos [Stanford Univ., Stanford, CA (United States)
2015-02-03
We show that the Quantum Hall Soliton constructed in [1] is stable under small perturbations. We find that creating quasiparticles actually lowers the energy of the system, and discuss whether this indicates an instability on the time scales relevant to the problem.
Decomposition of fractional quantum Hall states: New symmetries and approximations
Thomale, R.; Estienne, B.; Regnault, N.; Bernevig, B.A.
2010-01-01
Abstract: We provide a detailed description of a new symmetry structure of the monomial (Slater) expansion coefficients of bosonic (fermionic) fractional quantum Hall states first obtained in Ref. 1, which we now extend to spin-singlet states. We show that the Haldane-Rezayi spin-singlet state can
A Two Fluid Description of the Quantum Hall Soliton
Freivogel, Ben; Susskind, Leonard; Toumbas, Nicolaos
2001-01-01
We show that the Quantum Hall Soliton constructed in \\cite{giantbob} is stable under small perturbations. We find that creating quasiparticles actually lowers the energy of the system, and discuss whether this indicates an instability on the time scales relevant to the problem.
Tunable band topology reflected by fractional quantum Hall States in two-dimensional lattices.
Wang, Dong; Liu, Zhao; Cao, Junpeng; Fan, Heng
2013-11-01
Two-dimensional lattice models subjected to an external effective magnetic field can form nontrivial band topologies characterized by nonzero integer band Chern numbers. In this Letter, we investigate such a lattice model originating from the Hofstadter model and demonstrate that the band topology transitions can be realized by simply introducing tunable longer-range hopping. The rich phase diagram of band Chern numbers is obtained for the simple rational flux density and a classification of phases is presented. In the presence of interactions, the existence of fractional quantum Hall states in both |C| = 1 and |C| > 1 bands is confirmed, which can reflect the band topologies in different phases. In contrast, when our model reduces to a one-dimensional lattice, the ground states are crucially different from fractional quantum Hall states. Our results may provide insights into the study of new fractional quantum Hall states and experimental realizations of various topological phases in optical lattices.
Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene
Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.
2017-02-01
Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.
Planar Hall effect bridge magnetic field sensors
Henriksen, A. D.; Dalslet, B. T.; Skieller, D. H.; Lee, K. H.; Okkels, F.; Hansen, M. F.
2010-07-01
Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can be significantly enhanced by a geometric factor. For the samples in the present study, we demonstrate an enhancement of the sensor output by a factor of about 100 compared to cross-shaped sensors. The presented construction opens a new design and application area of the planar Hall effect, which we term planar Hall effect bridge sensors.
The Other Hall Effect: College Board Physics
Sheppard, Keith; Gunning, Amanda M.
2013-01-01
Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…
Signatures of Majorana zero-modes in nanowires, quantum spin Hall edges, and quantum dots
Mi, Shuo
2015-01-01
This thesis focuses on the investigation of Majorana zero-modes and their quantum transport properties of topological insulators and topological superconductors in several low-dimensional systems, i.e. 1D nanowire system (Chapter 2), 2D quantum spin Hall system (Chapter 3, 4) and 0D quantum dot syst
Komnik, A.; Saleur, H.
2011-09-01
We verify the validity of the Cohen-Gallavotti fluctuation theorem for the strongly correlated problem of charge transfer through an impurity in a chiral Luttinger liquid, which is realizable experimentally as a quantum point contact in a fractional quantum Hall edge state device. This is accomplished via the development of an analytical method to calculate the full counting statistics of the problem in all the parameter regimes involving the temperature, the Hall voltage, and the gate voltage.
Wu, Ying-Hai; Sreejith, G. J.; Jain, Jainendra K.
2012-09-01
The edge of spin-unpolarized or spin-polarized ν=2/3 fractional quantum Hall states is predicted by the effective theory to support a backward-moving neutral mode in addition to a forward-moving charge mode. We study this issue from a microscopic perspective where these states are identified with an effective filling factor of 2 of composite fermions, but with an effective magnetic field that is antiparallel to the external field. A simple counting from the composite fermion description suggests that there might be two backward-moving edge modes, but explicit calculations show that one of these is projected out of the low-energy sector, while the remaining mode provides a good microscopic account of the actual counterpropagating edge mode. The forward-moving modes are identified as “Schur modes,” obtained by multiplying the ground-state wave function by the symmetric Schur polynomials. The edge of the 2/3 spin unpolarized state provides a particularly striking realization of “spin-charge separation” in one-dimensional Tomonaga-Luttinger liquids, with the spin and charge modes moving in opposite directions.
Fibonacci anyons from Abelian bilayer quantum Hall states.
Vaezi, Abolhassan; Barkeshli, Maissam
2014-12-05
The possibility of realizing non-Abelian statistics and utilizing it for topological quantum computation (TQC) has generated widespread interest. However, the non-Abelian statistics that can be realized in most accessible proposals is not powerful enough for universal TQC. In this Letter, we consider a simple bilayer fractional quantum Hall system with the 1/3 Laughlin state in each layer. We show that interlayer tunneling can drive a transition to an exotic non-Abelian state that contains the famous "Fibonacci" anyon, whose non-Abelian statistics is powerful enough for universal TQC. Our analysis rests on startling agreements from a variety of distinct methods, including thin torus limits, effective field theories, and coupled wire constructions. We provide evidence that the transition can be continuous, at which point the charge gap remains open while the neutral gap closes. This raises the question of whether these exotic phases may have already been realized at ν=2/3 in bilayers, as past experiments may not have definitively ruled them out.
Ezawa, Z F; Hasebe, K
2003-01-01
Noncommutative geometry governs the physics of quantum Hall (QH) effects. We introduce the Weyl ordering of the second quantized density operator to explore the dynamics of electrons in the lowest Landau level. We analyze QH systems made of $N$-component electrons at the integer filling factor $\
Quantum Hall transport as a probe of capacitance profile at graphene edges
Vera-Marun, I. J.; Zomer, P. J.; Veligura, A.; Guimaraes, M. H. D.; Visser, L.; Tombros, N.; van Elferen, H. J.; Zeitler, U.; van Wees, B. J.
2013-01-01
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas (2DEG). Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work, we present how the appearance of different edge channe
Reprint of : Thermodynamic properties of a quantum Hall anti-dot interferometer
Levy Schreier, Sarah; Stern, Ady; Rosenow, Bernd; Halperin, Bertrand I.
2016-08-01
We study quantum Hall interferometers in which the interference loop encircles a quantum anti-dot. We base our study on thermodynamic considerations, which we believe reflect the essential aspects of interference transport phenomena. We find that similar to the more conventional Fabry-Perot quantum Hall interferometers, in which the interference loop forms a quantum dot, the anti-dot interferometer is affected by the electro-static Coulomb interaction between the edge modes defining the loop. We show that in the Aharonov-Bohm regime, in which effects of fractional statistics should be visible, is easier to access in interferometers based on anti-dots than in those based on dots. We discuss the relevance of our results to recent measurements on anti-dots interferometers.
Spin Hall effect by surface roughness
Zhou, Lingjun
2015-01-08
The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.
Induced Superconductivity in the Quantum Spin Hall Edge
Ren, Hechen; Hart, Sean; Wagner, Timo; Leubner, Philipp; Muehlbauer, Mathias; Bruene, Christoph; Buhmann, Hartmut; Molenkamp, Laurens; Yacoby, Amir
2014-03-01
Two-dimensional topological insulators have a gapped bulk and helical edge states, making it a quantum spin Hall insulator. Combining such edge states with superconductivity can be an excellent platform for observing and manipulating localized Majorana fermions. In the context of condensed matter, these are emergent electronic states that obey non-Abelian statistics and hence support fault-tolerant quantum computing. To realize such theoretical constructions, an essential step is to show these edge channels are capable of carrying coherent supercurrent. In our experiment, we fabricate Josephson junctions with HgTe/HgCdTe quantum wells, a two-dimensional material that becomes a quantum spin Hall insulator when the quantum well is thicker than 6.3 nm and the bulk density is depleted. In this regime, we observe supercurrents whose densities are confined to the edges of the junctions, with edge widths ranging from 180 nm to 408 nm. To verify the topological nature of these edges, we measure identical junctions with HgTe/HgCdTe quantum wells thinner than 6.3 nm and observe only uniform supercurrent density across the junctions. This research is supported by Microsoft Corporation Project Q, the NSF DMR-1206016, the DOE SCGF Program, the German Research Foundation, and EU ERC-AG program.
Automated Micro Hall Effect measurements
DEFF Research Database (Denmark)
Petersen, Dirch Hjorth; Henrichsen, Henrik Hartmann; Lin, Rong
2014-01-01
With increasing complexity of processes and variety of materials used for semiconductor devices, stringent control of the electronic properties is becoming ever more relevant. Collinear micro four-point probe (M4PP) based measurement systems have become high-end metrology methods for characteriza......With increasing complexity of processes and variety of materials used for semiconductor devices, stringent control of the electronic properties is becoming ever more relevant. Collinear micro four-point probe (M4PP) based measurement systems have become high-end metrology methods...... for characterization and monitoring of sheet resistance as well as sheet carrier density and mobility via the Micro Hall Effect (MHE) method....
Disorder-Induced Stabilization of the Quantum Hall Ferromagnet
Piot, B. A.; Desrat, W.; Maude, D. K.; Kazazis, D.; Cavanna, A.; Gennser, U.
2016-03-01
We report on an absolute measurement of the electronic spin polarization of the ν =1 integer quantum Hall state. The spin polarization is extracted in the vicinity of ν =1 (including at exactly ν =1 ) via resistive NMR experiments performed at different magnetic fields (electron densities) and Zeeman energy configurations. At the lowest magnetic fields, the polarization is found to be complete in a narrow region around ν =1 . Increasing the magnetic field (electron density) induces a significant depolarization of the system, which we attribute to a transition between the quantum Hall ferromagnet and the Skyrmion glass phase theoretically expected as the ratio between Coulomb interactions and disorder is increased. These observations account for the fragility of the polarization previously observed in high mobility 2D electron gas and experimentally demonstrate the existence of an optimal amount of disorder to stabilize the ferromagnetic state.
Quantum interference in graphene with quantum anomalous hall effect system%石墨烯量子反常霍尔效应体系中的量子干涉效应
Institute of Scientific and Technical Information of China (English)
唐娟; 吴泽文; 王雪娇; 邢燕霞
2016-01-01
To study characteristics of quantum interference in graphene possessed quantum anomalous Hall effect,graphene has been made into specific structure.With the aid of the tight-binding model and none-equilibrium Green’s function,the interfer-ences between the quantum anomalous Hall edge states in a graphene based quantum scattering cavity are investigated in the pres-ence of weak magnetic field.The interference period is inversely proportional with flux penetrating the scattering cavity.Further-more,the interfering effects are sensitive to the disorder scattering and the bulk states.Finally,researches show that quantum interference can be used to measure the edge states in graphene.%为了研究量子边缘态间的干涉效应,以锯齿型石墨烯纳米带为基础,通过引入外部自旋轨道耦合及磁交换场,在石墨烯纳米带中实现量子反常霍尔效应。在此基础上,构造弱耦合量子散射腔,并采用紧束缚近似下的哈密顿模型和非平衡格林函数方法,研究经由2个耦合边界反射的量子边缘态间的量子干涉效应。结果表明：弱磁场下,2个理想的反射边缘态间产生 A-B 干涉效应,随着磁场的变化,透射系数发生周期性的相长或相消干涉,干涉周期和穿过散射腔的磁通成反比。此外,干涉效应对杂质散射和体态非常敏感。因此,通过观测量子干涉效应可以定性地判断体系是否存在真正的边缘态。
DEVELOPMENT OF IMPROVED HALL EFFECT SENSORS.
HALL EFFECT , MAGNETOMETERS, GAIN, SENSITIVITY, MAGNETIC FIELDS, DETECTION, ELECTROMAGNETIC PROBES, WEIGHT, VOLUME, BATTERY COMPONENTS, INDIUM ALLOYS, ANTIMONY ALLOYS, FERRITES, MANPORTABLE EQUIPMENT.
AN A. C. HALL EFFECT GAUSSMETER,
MEASURING INSTRUMENTS, MEASURING INSTRUMENTS, HALL EFFECT , MAGNETOMETERS, MEASUREMENT, GENERATORS, CIRCUITS, ALTERNATING CURRENT, GERMANIUM, SEMICONDUCTOR DIODES, GALVANOMETERS, VOLTAGE, DIRECT CURRENT, MAGNETIC FIELDS.
Scaling Relations for Gaps in Fractional Quantum Hall States
Murthy, Ganpathy; Park, K.; Shankar, R.; Jain, J. K.
1998-01-01
The microscopic approach of Murthy and Shankar, which has recently been used to calculate the transport gaps of quantum Hall states with fractions p/(2ps+1), also implies scaling relations between gaps within a single sequence (fixed s) as well as between gaps of corresponding states in different sequences. This work tests these relations for a system of electrons in the lowest Landau level interacting with a model potential cutoff at high momenta due to sample thickness.
Scaling relations for gaps in fractional quantum Hall states
Murthy, Ganpathy; Park, K.; Shankar, R.; Jain, J. K.
1998-12-01
The microscopic Hamiltonian approach of Murthy and Shankar, which has recently been used to calculate the transport gaps of quantum Hall states with fractions ν=p/(2ps+1), also implies scaling relations between gaps within a single sequence (fixed s) as well as between gaps of corresponding states in different sequences. This work tests these relations for a system of electrons in the lowest Landau level interacting with a model potential cutoff at high momenta due to sample thickness.
New resistivity for high-mobility quantum Hall conductors
Mceuen, P. L.; Szafer, A.; Richter, C. A.; Alphenaar, B. W.; Jain, J. K.
1990-01-01
Measurements showing dramatic nonlocal behavior in the four-terminal resistances of a high-mobility quantum Hall conductor are presented. These measurements illustrate that the standard definition of the resistivity tensor is inappropriate, but they are in excellent agreement with a new model of the conductor that treats the edge and bulk conducting pathways independently. This model uses a single intensive parameter, analogous to a local resistivity for the bulk channel only, to characterize the system.
Emergent particle-hole symmetry in spinful bosonic quantum Hall systems
Geraedts, S. D.; Repellin, C.; Wang, Chong; Mong, Roger S. K.; Senthil, T.; Regnault, N.
2017-08-01
When a fermionic quantum Hall system is projected into the lowest Landau level, there is an exact particle-hole symmetry between filling fractions ν and 1 -ν . We investigate whether a similar symmetry can emerge in bosonic quantum Hall states, where it would connect states at filling fractions ν and 2 -ν . We begin by showing that the particle-hole conjugate to a composite fermion "Jain state" is another Jain state, obtained by reverse flux attachment. We show how information such as the shift and the edge theory can be obtained for states which are particle-hole conjugates. Using the techniques of exact diagonalization and infinite density matrix renormalization group, we study a system of two-component (i.e., spinful) bosons, interacting via a δ -function potential. We first obtain real-space entanglement spectra for the bosonic integer quantum Hall effect at ν =2 , which plays the role of a filled Landau level for the bosonic system. We then show that at ν =4 /3 the system is described by a Jain state which is the particle-hole conjugate of the Halperin (221) state at ν =2 /3 . We show a similar relationship between nonsinglet states at ν =1 /2 and 3 /2 . We also study the case of ν =1 , providing unambiguous evidence that the ground state is a composite Fermi liquid. Taken together our results demonstrate that there is indeed an emergent particle-hole symmetry in bosonic quantum Hall systems.
A realistic quantum capacitance model for quantum Hall edge state based Fabry-Pérot interferometers
Kilicoglu, O.; Eksi, D.; Siddiki, A.
2017-01-01
In this work, the classical and the quantum capacitances are calculated for a Fabry-Pérot interferometer operating in the integer quantized Hall regime. We first consider a rotationally symmetric electrostatic confinement potential and obtain the widths and the spatial distribution of the insulating (incompressible) circular strips using a charge density profile stemming from self-consistent calculations. Modelling the electrical circuit of capacitors composed of metallic gates and incompressible/compressible strips, we investigate the conditions to observe Aharonov-Bohm (quantum mechanical phase dependent) and Coulomb blockade (capacitive coupling dependent) effects reflected in conductance oscillations. In a last step, we solve the Schrödinger and the Poisson equations self-consistently in a numerical manner taking into account realistic experimental geometries. We find that, describing the conductance oscillations either by Aharanov-Bohm or Coulomb blockade strongly depends on sample properties also other than size, therefore, determining the origin of these oscillations requires further experimental and theoretical investigation.
Gate-defined graphene quantum point contact in the quantum Hall regime.
Nakaharai, S; Williams, J R; Marcus, C M
2011-07-15
We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5h/e2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.
Parity Anomaly and Spin Transmutation in Quantum Spin Hall Josephson Junctions
Peng, Yang; Vinkler-Aviv, Yuval; Brouwer, Piet W.; Glazman, Leonid I.; von Oppen, Felix
2016-12-01
We study the Josephson effect in a quantum spin Hall system coupled to a localized magnetic impurity. As a consequence of the fermion parity anomaly, the spin of the combined system of impurity and spin-Hall edge alternates between half-integer and integer values when the superconducting phase difference across the junction advances by 2 π . This leads to characteristic differences in the splittings of the spin multiplets by exchange coupling and single-ion anisotropy at phase differences, for which time-reversal symmetry is preserved. We discuss the resulting 8 π -periodic (or Z4) fractional Josephson effect in the context of recent experiments.
Anomalous Hall effect in polycrystalline Ni films
Guo, Zaibing
2012-02-01
We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
Collective modes at the fractional quantum Hall edge
Joglekar, Yogesh; Murthy, Ganpathy
2002-03-01
The fractional quantum Hall edge has been a continuing source of new ideas [1] and experimental results [2] for some time. Most theoretical approaches start with an effective bosonic theory [1] in which all fermions have been integrated out (an exception is the approach based on Chern-Simons theory [3]). Our approach is based on the lowest Landau level Hamiltonian theory of the FQHE [4]. In this theory, composite fermions are fully interacting, and We obtain the collective modes using a conserving approximation which respects the constraints. We present the edge-mode dispersions for various simple fractions. 1. X.-G.Wen, Phys. Rev. Lett. 64, 2206 (1990); A.Lopez and E.Fradkin, Phys. Rev. B 59, 15323 (1999); U. Zulicke and A.H.MacDonald, Phys. Rev. B 60, 2837 (1999); D.-H.Lee and X.-G.Wen, cond-mat/9809160. 2. A.M.Chang et al, Phys. Rev. Lett. 86, 143 (2000). 3. L.S.Levitov, A.V.Shytov, and B.I.Halperin, Phys. Rev. B 64, 075322 (2001). 4. R. Shankar and G. Murthy, Phys. Rev. Lett. 79, 4437 (1997).
Coulomb drag and tunneling studies in quantum Hall bilayers
Nandi, Debaleena
The bilayer quantum Hall state at total filling factor νT=1, where the total electron density matches the degeneracy of the lowest Landau level, is a prominent example of Bose-Einstein condensation of excitons. A macroscopically ordered state is realized where an electron in one layer is tightly bound to a "hole" in the other layer. If exciton transport were the only bulk transportmechanism, a current driven in one layer would spontaneously generate a current of equal magnitude and opposite sign in the other layer. The Corbino Coulomb drag measurements presented in this thesis demonstrate precisely this phenomenon. Excitonic superfluidity has been long sought in the νT=1 state. The tunneling between the two electron gas layers exihibit a dc Josephson-like effect. A simple model of an over-damped voltage biased Josephson junction is in reasonable agreement with the observed tunneling I -- V. At small tunneling biases, it exhibits a tunneling "supercurrent". The dissipation is carefully studied in this tunneling "supercurrent" and found to remain small but finite.
Observation of a nematic quantum Hall liquid on the surface of bismuth
Feldman, Benjamin E.; Randeria, Mallika T.; Gyenis, András; Wu, Fengcheng; Ji, Huiwen; Cava, R. J.; MacDonald, Allan H.; Yazdani, Ali
2016-10-01
Nematic quantum fluids with wave functions that break the underlying crystalline symmetry can form in interacting electronic systems. We examined the quantum Hall states that arise in high magnetic fields from anisotropic hole pockets on the Bi(111) surface. Spectroscopy performed with a scanning tunneling microscope showed that a combination of single-particle effects and many-body Coulomb interactions lift the six-fold Landau level (LL) degeneracy to form three valley-polarized quantum Hall states. We imaged the resulting anisotropic LL wave functions and found that they have a different orientation for each broken-symmetry state. The wave functions correspond to those expected from pairs of hole valleys and provide a direct spatial signature of a nematic electronic phase.
Gu, Yingfei; Lee, Ching Hua; Wen, Xueda; Cho, Gil Young; Ryu, Shinsei; Qi, Xiao-Liang
2016-09-01
In this paper, we study (2 +1 ) -dimensional quantum anomalous Hall states, i.e., band insulators with quantized Hall conductance, using exact holographic mapping. Exact holographic mapping is an approach to holographic duality which maps the quantum anomalous Hall state to a different state living in (3 +1 ) -dimensional hyperbolic space. By studying topological response properties and the entanglement spectrum, we demonstrate that the holographic dual theory of a quantum anomalous Hall state is a (3 +1 ) -dimensional topological insulator. The dual description enables a characterization of topological properties of a system by the quantum entanglement between degrees of freedom at different length scales.
Experimental probes of emergent symmetries in the quantum Hall system
Lutken, C A
2011-01-01
Experiments studying renormalization group flows in the quantum Hall system provide significant evidence for the existence of an emergent holomorphic modular symmetry Gamma(0)(2). We briefly review this evidence and show that, for the lowest temperatures, the experimental determination of the position of the quantum critical points agrees to the parts per mille level with the prediction from Gamma(0)(2). We present evidence that experiments giving results that deviate substantially from the symmetry predictions are not cold enough to be in the quantum critical domain. We show how the modular symmetry extended by a non-holomorphic particle hole duality leads to an extensive web of dualities related to those in plateau insulator transitions, and we derive a formula relating dual pairs (B, B(d)) of magnetic field strengths across any transition. The experimental data obtained for the transition studied so far is in excellent agreement with the duality relations following from this emergent symmetry, and rule out...
Meron-Pair Excitations in Bilayer Quantum Hall System
Moon, Kyungsun
Bilayer two-dimensional electron gas systems can form unusual broken symmetry states with spontaneous inter-layer phase coherence at certain filling factors. At total filling factor νT = 1, the lowest energy charged excitation of the system is theoretically suggested to be a linearly-confined meron-pair, which is topologically identical to a single skyrmion. We will review how this remarkable excitation arises and can help unravel various experimental results demonstrated in bilayer quantum Hall system. In order to detect the linearly-confined meron-pair excitation directly, we propose a gated bilayer Hall bar experiment, where the magnitude and orientation of magnetic field B‖ applied parallel to the 2D plane can be controlled. We demonstrate a strong angle-dependent transport due to the anisotropic nature of linearly-confined meron-pairs and discuss how it would be manifested in experiment.
Strain and chemical function decoration induced quantum spin Hall effect in 2D silicene and Sn film
Energy Technology Data Exchange (ETDEWEB)
Cao, Guohua; Zhang, Yun; Cao, Juexian, E-mail: jxcao@xtu.edu.cn
2015-07-17
The topological properties of silicene and Sn film decorated with chemical functional groups (–H, –F, –Cl, –Br, –I) are investigated by the first-principle calculations. It is found that Sn films decorated with F, Cl, Br and I are topological insulators with sizable gap while the other combinations are normal insulators. The phase transition of X decorated silicene and Sn film was investigated by applying external strain. Our results pointed out that the normal insulators can transform into topological insulators with sizable gap under critical strain. The research provided new routes to design 2D topological insulator with sizable gap which has wide applications in next-generation spintronics devices. - Highlights: • The inverted band order can be obtained with applying external strain. • Band gaps of TIs can be enhanced by external strain. • Quantum phase transition is observed under a critical strain for X−Si and X−Sn.
Minimal Excitations in the Fractional Quantum Hall Regime
Rech, J.; Ferraro, D.; Jonckheere, T.; Vannucci, L.; Sassetti, M.; Martin, T.
2017-02-01
We study the minimal excitations of fractional quantum Hall edges, extending the notion of levitons to interacting systems. Using both perturbative and exact calculations, we show that they arise in response to a Lorentzian potential with quantized flux. They carry an integer charge, thus involving several Laughlin quasiparticles, and leave a Poissonian signature in a Hanbury Brown-Twiss partition noise measurement at low transparency. This makes them readily accessible experimentally, ultimately offering the opportunity to study real-time transport of Abelian and non-Abelian excitations.
Star Formation and the Hall Effect
Braiding, Catherine
2011-01-01
Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. This thesis describes a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, presenting similarity solutions that demonstrate that the Hall effect has a profound influence on the dynamics of collapse. ... Hall diffusion also determines the strength of the magnetic diffusion and centrifugal shocks that bound the pseudo and rotationally-supported discs, and can introduce subshocks that further slow accretion onto the protostar. In cores that are not initially rotating Hall diffusion can even induce rotation, whic...
Optical Hall effect in strained graphene
Nguyen, V. Hung; Lherbier, A.; Charlier, J.-C.
2017-06-01
When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is a direct consequence of the optical Hall effect arising from the light-charge carrier interaction in solid state systems subjected to an external magnetic field, in analogy with the conventional Hall effect. The optical Hall effect has been explored in many thin films and also more recently in 2D layered materials. Here, an alternative approach based on strain engineering is proposed to achieve an optical Hall conductivity in graphene without magnetic field. Indeed, strain induces lattice symmetry breaking and hence can result in a finite optical Hall conductivity. First-principles calculations also predict this strain-induced optical Hall effect in other 2D materials. Combining with the possibility of tuning the light energy and polarization, the strain amplitude and direction, and the nature of the optical medium, large ranges of positive and negative optical Hall conductivities are predicted, thus opening the way to use these atomistic thin materials in novel specific opto-electro-mechanical devices.
On transport in quantum Hall systems with constrictions
Lal, S.
2007-10-01
We study edge transport in a simple model of a constricted quantum Hall system with a lowered local filling factor. The current backscattered from the constriction is explained from a matching of the properties of the edge-current excitations in the constriction (ν2) and bulk (ν1) regions. We develop a hydrodynamic theory for bosonic edge modes inspired by this model, finding that a competition between two tunneling process, related by a quasiparticle-quasihole symmetry, determines the fate of the low-bias transmission conductance. A novel generalisation of the Kane-Fisher quantum impurity model is found, describing transitions from a weak-coupling theory at partial transmission to strong-coupling theories for perfect transmission and reflection as well as a new symmetry dictated fixed point. These results provide satisfactory explanations for recent experimental results at filling factors of 1/3 and 1.
Precise quantization of anomalous Hall effect near zero magnetic field
Bestwick, Andrew; Fox, Eli; Kou, Xufeng; Pan, Lei; Wang, Kang; Goldhaber-Gordon, David
2015-03-01
The quantum anomalous Hall effect (QAHE) has recently been of great interest due to its recent experimental realization in thin films of Cr-doped (Bi, Sb)2Te3, a ferromagnetic 3D topological insulator. The presence of ferromagnetic exchange breaks time-reversal symmetry, opening a gap in the surface states, but gives rise to dissipationless chiral conduction at the edge of a magnetized film. Ideally, this leads to vanishing longitudinal resistance and Hall resistance quantized to h /e2 , where h is Planck's constant and e is the electron charge, but perfect quantization has so far proved elusive. Here, we study the QAHE in the limit of zero applied magnetic field, and measure Hall resistance quantized to within one part per 10,000. Deviation from quantization is due primarily to thermally activated carriers, which can be nearly eliminated through adiabatic demagnetization cooling. This result demonstrates an important step toward dissipationless electron transport in technologically relevant conditions.
Observation of the magnon Hall effect.
Onose, Y; Ideue, T; Katsura, H; Shiomi, Y; Nagaosa, N; Tokura, Y
2010-07-16
The Hall effect usually occurs in conductors when the Lorentz force acts on a charge current in the presence of a perpendicular magnetic field. Neutral quasi-particles such as phonons and spins can, however, carry heat current and potentially exhibit the thermal Hall effect without resorting to the Lorentz force. We report experimental evidence for the anomalous thermal Hall effect caused by spin excitations (magnons) in an insulating ferromagnet with a pyrochlore lattice structure. Our theoretical analysis indicates that the propagation of the spin waves is influenced by the Dzyaloshinskii-Moriya spin-orbit interaction, which plays the role of the vector potential, much as in the intrinsic anomalous Hall effect in metallic ferromagnets.
Hall effect degradation of rail gun performance
Witalis, E. A.; Gunnarsson, Patrik
1993-01-01
The paper discusses the Hall effect and shows it to be significant in the low-density and high-field trailing part of a plasma armature. Without the Hall effect a simple armature model is derived. It exhibits properties expected from classical MHD theory and shows that the purely relativistic electric charge buildup on the rails is a fundamental gun property, leading to V(breech) = 1.5 V(muzzle). The mathematics involved in accounting for Hall effect phenomena is described. These are of two types: the Hall-skewing of the armature current and the superimposed plasma flow rotation. For decreasing gun current the two effects efficiently combine to eject armature plasma rearwards, thus creating conditions for arc separation and parasitic arcs.
Piezo Voltage Controlled Planar Hall Effect Devices
Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You
2016-06-01
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
Piezo Voltage Controlled Planar Hall Effect Devices.
Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You
2016-06-22
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
Hall effect in organic layered conductors
Directory of Open Access Journals (Sweden)
R.A.Hasan
2006-01-01
Full Text Available The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers.
Hyperspherical Slater determinant approach to few-body fractional quantum Hall states
Energy Technology Data Exchange (ETDEWEB)
Yan, Bin, E-mail: yanbin@purdue.edu; Wooten, Rachel E.; Daily, Kevin M.; Greene, Chris H.
2017-05-15
In a recent study (Daily et al., 2015), a hyperspherical approach has been developed to study few-body fractional quantum Hall states. This method has been successfully applied to the exploration of few boson and fermion problems in the quantum Hall region, as well as the study of inter-Landau level collective excitations (Rittenhouse et al., 2016; Wooten et al., 2016). However, the hyperspherical method as it is normally implemented requires a subsidiary (anti-)symmetrization process, which limits its computational effectiveness. The present work overcomes these difficulties and extends the power of this method by implementing a representation of the hyperspherical many-body basis space in terms of Slater determinants of single particle eigenfunctions. A clear connection between the hyperspherical representation and the conventional single particle picture is presented, along with a compact operator representation of the theoretical framework. - Highlights: • A hyperspherical method has been implemented to study the quantum Hall effect. • The hyperspherical many-body basis space is represented with Slater determinants. • Example numerical studies of the 4- and 8-electron systems are presented.
The phonon Hall effect: theory and application
Energy Technology Data Exchange (ETDEWEB)
Zhang Lifa; Wang Jiansheng; Li Baowen [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Ren Jie [NUS Graduate School for Integrative Sciences and Engineering, Singapore 117456 (Singapore)
2011-08-03
We present a systematic theory of the phonon Hall effect in a ballistic crystal lattice system, and apply it on the kagome lattice which is ubiquitous in various real materials. By proposing a proper second quantization for the non-Hermitian in the polarization-vector space, we obtain a new heat current density operator with two separate contributions: the normal velocity responsible for the longitudinal phonon transport, and the anomalous velocity manifesting itself as the Hall effect of transverse phonon transport. As exemplified in kagome lattices, our theory predicts that the direction of Hall conductivity at low magnetic field can be reversed by tuning the temperatures, which we hope can be verified by experiments in the future. Three phonon-Hall-conductivity singularities induced by phonon-band-topology change are discovered as well, which correspond to the degeneracies at three different symmetric center points, {Gamma}, K, X, in the wavevector space of the kagome lattice.
Electronic transport in two-dimensional systems in the quantum hall regime
Tarquini, Vinicio
The integer and the fractional quantum Hall effects are essential to the exploration of quantum matters characterized by topological phases. A quantum Hall system hosts one-dimensional (1D) chiral edge channels that manifest zero magnetoresistance, dissipationless due to the broken time reversal symmetry, and quantized Hall resistance vhe2 with v being the topological invariant (or Chern number). The 1-1 correspondence between the conducting gapless edge channels to the gapped incompressible bulk states is a defining character of a topological insulator (TI). Understanding this correspondence in real systems, especially the origin of its robustness (in terms of the limit of breakdown), is important both fundamentally and practically (i.e. in relation to spintronics). However, the breakdown mechanism, especially in light of the edge-bulk correlation, is still an open question. We adopt GaAs two-dimensional (2D) high-mobility hole systems confined in a 20 nm wide (100)-GaAs quantum wells and have perform transport measurement for a range of charge densities between 4 and 5 x 1010 cm -2 with a carrier mobility of 2 - 4 x 106 cm 2/V·s down to millikelvin temperatures. Systematic characterization of the 2D systems through Shubnikov-de Haas (SdH) oscillations yields an effective mass between 0.30 and 0.50me, in good agreement with the cyclotron resonance results. We then modify a regular Hall bar system into a unique anti-Hall bar geometry that provides an extra set of independent chiral edge channels without altering the topological invariant. We perform systematic measurement of quantum oscillations via chiral edges while simultaneously probing the bulk dynamics, through measuring across independent edges, in respond to the edge excitations. The edge-bulk correspondence reveals a non-equilibrium dynamical development of the incompressible bulk states that leads to a novel asymmetrical 1-0 Hall potential distribution. Moreover, probing the breakdown via inner and outer
Spin-excitations of the quantum Hall ferromagnet of composite fermions
Doretto, R. L.; Goerbig, M. O.; Lederer, P.; Caldeira, A. O.; Smith, C. Morais
2005-07-01
The spin excitations of a fractional quantum Hall system are evaluated within a bosonization approach. In a first step, we generalize Murthy and Shankar’s Hamiltonian theory of the fractional quantum Hall effect to the case of composite fermions with an extra discrete degree of freedom. Here, we mainly investigate the spin degrees of freedom, but the proposed formalism may be useful also in the study of bilayer quantum-Hall systems, where the layer index may formally be treated as an isospin. In a second step, we apply a bosonization scheme, recently developed for the study of the two-dimensional electron gas, to the interacting composite-fermion Hamiltonian. The dispersion of the bosons, which represent quasiparticle-quasihole excitations, is analytically evaluated for fractional quantum Hall systems at ν=1/3 and ν=1/5 . The finite width of the two-dimensional electron gas is also taken into account explicitly. Furthermore, we consider the interacting bosonic model and calculate the lowest-energy state for two bosons. In addition to a continuum describing scattering states, we find a bound-state of two bosons. This state is interpreted as a pair excitation, which consists of a skyrmion of composite fermions and an antiskyrmion of composite fermions. The dispersion relation of the two-boson state is evaluated for ν=1/3 and ν=1/5 . Finally, we show that our theory provides the microscopic basis for a phenomenological nonlinear σ model for studying the skyrmion of composite fermions.
Hall effect on the triangular lattice
Leon Suros, Gladys Eliana; Berthod, Christophe; Giamarchi, Thierry; Millis, A.
2008-01-01
We investigate the high frequency Hall effect on a two-dimensional triangular lattice with nearest-neighbor hopping and a local Hubbard interaction. The complete temperature and doping dependencies of the high-frequency Hall coefficient $R_H$ are evaluated analytically and numerically for small, intermediate, and strong interactions using various approximation schemes. We find that $R_H$ follows the semiclassical $1/qn^*$ law near T=0, but exhibits a striking $T$-linear behavior with an inter...
Braiding and Berry's phases in non-Abelian quantum hall states
Zikos, Georgios
universal set of quantum gates (the quantum analogs of Boolean logic gates) by braiding them. I then focus in particular on my work developing algorithms for performing brute force searches over the space of braids to find braids which produce unitary operations close to any desired operation. These brute force searches are a crucial part of our quantum gate construction, and I show that by using a so-called "load balanced" bidirectional search I can find braids which approximate any desired operation to an accuracy of 1 part in 105. I then turn to my work calculating the Berry's phase obtained when quasiparticles are moved around one another in the Moore-Read state, a non Abelian state generally believed to describe the nu = 5/2 quantum Hall effect. This work is done using variational Monte Carlo, a method which allows one to numerically evaluate the Berry's phase for finite size systems. By exploiting certain properties of the Moore-Read state I have been able to study systems consisting of as many as 150 electrons. In so doing I have verified the conjectured connection between the Berry's phase produced by physically moving quasiparticles around one another and the mathematical phase one obtains by simply analytically continuing the quasiparticle coordinates. An added benefit of these calculations is that we can deduce the length scale which determines the size of the quasiparticles. This length scale dictates how far apart the quasiparticles must be in order to prevent errors when they are used for topological quantum computation.
Universal Topological Quantum Computation from a Superconductor-Abelian Quantum Hall Heterostructure
Mong, Roger S. K.; Clarke, David J.; Alicea, Jason; Lindner, Netanel H.; Fendley, Paul; Nayak, Chetan; Oreg, Yuval; Stern, Ady; Berg, Erez; Shtengel, Kirill; Fisher, Matthew P. A.
2014-01-01
Non-Abelian anyons promise to reveal spectacular features of quantum mechanics that could ultimately provide the foundation for a decoherence-free quantum computer. A key breakthrough in the pursuit of these exotic particles originated from Read and Green's observation that the Moore-Read quantum Hall state and a (relatively simple) two-dimensional p+ip superconductor both support so-called Ising non-Abelian anyons. Here we establish a similar correspondence between the Z_3 Read-Rezayi quantu...
Spin Hall effect induced spin transfer through an insulator
Chen, Wei; Sigrist, Manfred; Manske, Dirk
2016-09-01
When charge current passes through a normal metal that exhibits the spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of spin through an insulator or vacuum to reach a ferromagnet without transferring charge. In a normal metal/insulator/ferromagnetic insulator trilayer (such as Pt/oxide/YIG), the quantum tunneling explains the spin-transfer torque and spin pumping that exponentially decay with the thickness of the insulator. In a normal metal/insulator/ferromagnetic metal trilayer (such as Pt/oxide/Co), the spin transfer in general does not decay monotonically with the thickness of the insulator. Combining with the spin Hall magnetoresistance, this tunneling mechanism points to the possibility of a tunneling spectroscopy that can probe the magnon density of states of a ferromagnetic insulator in an all-electrical and noninvasive manner.
Finite-temperature effective boundary theory of the quantized thermal Hall effect
Nakai, Ryota; Ryu, Shinsei; Nomura, Kentaro
2016-02-01
A finite-temperature effective free energy of the boundary of a quantized thermal Hall system is derived microscopically from the bulk two-dimensional Dirac fermion coupled with a gravitational field. In two spatial dimensions, the thermal Hall conductivity of fully gapped insulators and superconductors is quantized and given by the bulk Chern number, in analogy to the quantized electric Hall conductivity in quantum Hall systems. From the perspective of effective action functionals, two distinct types of the field theory have been proposed to describe the quantized thermal Hall effect. One of these, known as the gravitational Chern-Simons action, is a kind of topological field theory, and the other is a phenomenological theory relevant to the Strěda formula. In order to solve this problem, we derive microscopically an effective theory that accounts for the quantized thermal Hall effect. In this paper, the two-dimensional Dirac fermion under a static background gravitational field is considered in equilibrium at a finite temperature, from which an effective boundary free energy functional of the gravitational field is derived. This boundary theory is shown to explain the quantized thermal Hall conductivity and thermal Hall current in the bulk by assuming the Lorentz symmetry. The bulk effective theory is consistently determined via the boundary effective theory.
Durganandini, P.
2015-03-01
We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.
Unconventional spin texture in a noncentrosymmetric quantum spin Hall insulator
Mera Acosta, C.; Babilonia, O.; Abdalla, L.; Fazzio, A.
2016-07-01
We propose that the simultaneous presence of both Rashba and band inversion can lead to a Rashba-like spin splitting formed by two bands with the same in-plane helical spin texture. Because of this unconventional spin texture, the backscattering is forbidden in edge and bulk conductivity channels. We propose a noncentrosymmetric honeycomb-lattice quantum spin Hall (QSH) insulator family formed by the IV, V, and VII elements with this property. The system formed by Bi, Pb, and I atoms is mechanically stable and has both a large Rashba spin splitting of 60 meV and a large nontrivial band gap of 0.14 eV. Since the edge and the bulk states are protected by the time-reversal (TR) symmetry, contrary to what happens in most doped QSH insulators, the bulk states do not contribute to the backscattering in the electronic transport, allowing the construction of a spintronic device with less energy loss.
On Fractional Quantum Hall Solitons in ABJM-like Theory
Belhaj, Adil
2011-01-01
Using D-brane physics, we study fractional quantum Hall solitons (FQHS) in ABJM-like theory in terms of type IIA dual geometries. In particular, we discuss a class of Chern-Simons (CS) quivers describing FQHS sytems at low energy. These CS quivers come from R-R gauge fields interacting with D6-branes wrapped on 4-cycles, which reside within a blown up CP^3 projective space. Based on the CS quiver method and mimicking the construction of del Pezzo surfaces in terms of CP^2, we first give a model which corresponds to a single layer model of FQHS system, then we propose a multi-layer system generalizing the doubled CS field theory, which is used in the study of topological defect in graphene.
On fractional quantum Hall solitons in ABJM-like theory
Energy Technology Data Exchange (ETDEWEB)
Belhaj, Adil, E-mail: belhaj@unizar.es [Centre of Physics and Mathematics, CPM-CNESTEN, Rabat (Morocco); Lab Phys Hautes Energies, Modelisation et Simulation, Faculte des Sciences, Rabat (Morocco); Groupement National de Physique des Hautes Energies, Siege focal: FSR, Rabat (Morocco)
2011-11-24
Using D-brane physics, we study fractional quantum Hall solitons (FQHS) in ABJM-like theory in terms of type IIA dual geometries. In particular, we discuss a class of Chern-Simons (CS) quivers describing FQHS systems at low energy. These CS quivers come from R-R gauge fields interacting with D6-branes wrapped on 4-cycles, which reside within a blown up CP{sup 3} projective space. Based on the CS quiver method and mimicking the construction of del Pezzo surfaces in terms of CP{sup 2}, we first give a model which corresponds to a single layer model of FQHS system, then we propose a multi-layer system generalizing the doubled CS field theory, which is used in the study of topological defect in graphene.
Fluctuations and topological transitions of quantum Hall stripes: Nematics as anisotropic hexatics
Ettouhami, A. M.; Doiron, C. B.; Côté, R.
2007-10-01
We study fluctuations and topological melting transitions of quantum Hall stripes near half filling of intermediate Landau levels. Taking the stripe state to be an anisotropic Wigner crystal (AWC) allows us to identify the quantum Hall nematic state conjectured in previous studies of the two-dimensional (2D) electron gas as an anisotropic hexatic. The transition temperature from the AWC to the quantum Hall nematic state is explicitly calculated, and a tentative phase diagram for the 2D electron gas near half filling is suggested.
Charge carrier coherence and Hall effect in organic semiconductors.
Yi, H T; Gartstein, Y N; Podzorov, V
2016-03-30
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.
Skyrmions and edge-spin excitations in quantum Hall droplets
Energy Technology Data Exchange (ETDEWEB)
Oaknin, J.H. [Departamento de Fisica Teorica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid (Spain); Martin-Moreno, L. [Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, Consejo Superior de Investigaciones Cientificas, Universidad de Zaragoza, Zaragoza 50015 (Spain); Tejedor, C. [Departamento de Fisica Teorica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco, 28049, Madrid (Spain)
1996-12-01
We present a microscopic analysis of spin textures in quantum Hall droplets for filling factors {nu}{approx_equal}1. We obtain analytical many-body wave functions of spin excitations which describe all of the necessary quantum numbers. An adequate linear combination of these eigenstates leads to wave functions in which the spatially dependent spinor can be factorized. This displays the topological structure of several spin textures, some of which are located at the bulk, and others at the edge. For the former, we obtain bulk charged skyrmions that can be expressed as a condensate of spin excitons interacting via a two-body repulsive interaction. The size of the skyrmion is given by the number of excitons present in the condensate. We also obtain the skyrmion energy as a function of its size for both zero and finite Zeeman energy. For the edge excitations we find that a branch of these spin textures starts with lower energy than the branch of polarized charge edge excitations. When the number of electrons is of the order of a few tenths, there are no crossings of the spin and charge branches so that edge-spin textures can be responsible for the edge reconstruction of the droplet. On the contrary, edge reconstruction is always found to be due to polarized charge excitations when the number of electrons is larger than one hundred. {copyright} {ital 1996 The American Physical Society.}
The Hall effect in star formation
Braiding, Catherine R
2011-01-01
Magnetic fields play an important role in star formation by regulating the removal of angular momentum from collapsing molecular cloud cores. Hall diffusion is known to be important to the magnetic field behaviour at many of the intermediate densities and field strengths encountered during the gravitational collapse of molecular cloud cores into protostars, and yet its role in the star formation process is not well-studied. We present a semianalytic self-similar model of the collapse of rotating isothermal molecular cloud cores with both Hall and ambipolar diffusion, and similarity solutions that demonstrate the profound influence of the Hall effect on the dynamics of collapse. The solutions show that the size and sign of the Hall parameter can change the size of the protostellar disc by up to an order of magnitude and the protostellar accretion rate by fifty per cent when the ratio of the Hall to ambipolar diffusivities is varied between -0.5 <= eta_H / eta_A <= 0.2. These changes depend upon the orien...
Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure
Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R.; Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V.; Dvoretsky, S. A.; Mikhailov, N. N.
2016-12-01
We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures T =(2.9div 50) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.
Heterodyne Hall effect in a two-dimensional electron gas
Oka, Takashi; Bucciantini, Leda
2016-10-01
We study the hitherto unaddressed phenomenon of the quantum Hall effect with a magnetic and electric field oscillating in time with resonant frequencies. This phenomenon highlights an example of a heterodyne device with the magnetic field acting as a driving force, and it is analyzed in detail in its classical and quantum versions using Floquet theory. A bulk current flowing perpendicularly to the applied electric field is found, with a frequency shifted by integer multiples of the driving frequency. When the ratio of the cyclotron and driving frequency takes special values, the electron's classical trajectory forms a loop and the effective mass diverges, while in the quantum case we find an analog of the Landau quantization. A possible realization using metamaterial plasmonics is discussed.
Precise quantization of anomalous Hall effect near zero magnetic field
Energy Technology Data Exchange (ETDEWEB)
Bestwick, A. J. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Fox, E. J. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Kou, Xufeng [Univ. of California, Los Angeles, CA (United States); Pan, Lei [Univ. of California, Los Angeles, CA (United States); Wang, Kang L. [Univ. of California, Los Angeles, CA (United States); Goldhaber-Gordon, D. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
2015-05-04
In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.
Inverse spin Hall effect by spin injection
Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.
2007-09-01
Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.
Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime
Ho, L. H.; Taskinen, L. J.; Micolich, A.P.; Hamilton, A. R.; Atkinson, P.; Ritchie, D. A.
2010-01-01
The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum Hall bulk states. We report electrometry measurements of a bilayer 2D system that demonstrate that the hysteresis is instead due to non-equilibrium induced current. This finding is consistent with magnetometry and electrometry measurements of single 2D syste...
Prediction of a quantum anomalous Hall state in Co-decorated silicene
Kaloni, Thaneshwor P.
2014-01-09
Based on first-principles calculations, we demonstrate that Co-decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin-orbit coupling of the silicene opens a nontrivial band gap at the K point. As compared to other transition metals, Co-decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.
A quantitative examination of the collapse of spin splitting in the quantum Hall regime
Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.
2012-02-01
There is a great deal of current interest in understanding electron spin physics in semiconductors for potential quantum computation applications. The quantum Hall effect in the two-dimensional electron system (2DES) has proved to be a unique system in this avenue due to a tunability in the difference of spin population and thus the strength of exchange interaction provided by the formation of Landau levels. In this talk, we want to present our experimental results to quantitatively examine the theoretical model of spin splitting collapse in the quantum Hall regime [by Fogler and Shklovskii, Phys. Rev. B 52, 17366 (1995)] at fixed magnetic fields as a function of electron density in a high quality heterojunction insulated-gate field effect transistor. In the density range between n = 2x10^10 and 2x10^11 cm-2, the Landau level number N follows a power-law dependence on the critical electron density nc, where the spin splitting collapses, and N=11.47xnc^0.64±0.01. This power law dependence is in good agreement with the theoretical prediction in the low density regime.
Conformal field theory approach to Abelian and non-Abelian quantum Hall quasielectrons.
Hansson, T H; Hermanns, M; Regnault, N; Viefers, S
2009-04-24
The quasiparticles in quantum Hall liquids carry fractional charge and obey fractional quantum statistics. Of particular recent interest are those with non-Abelian statistics, since their braiding properties could, in principle, be used for robust coding of quantum information. There is already a good theoretical understanding of quasiholes in both Abelian and non-Abelian quantum Hall states. Here we develop conformal field theory methods that allow for an equally precise description of quasielectrons and explicitly construct two- and four-quasielectron excitations of the non-Abelian Moore-Read state.
Anomalous Hall Effect for chiral fermions
Zhang, P -M
2014-01-01
Semiclassical chiral fermions manifest the anomalous spin-Hall effect: when put into a pure electric field, they suffer a side jump, analogous to what happens to their massive counterparts in non-commutative mechanics. The transverse shift is consistent with the conservation of the angular momentum. In a pure magnetic field a cork-screw-like, spiraling motion is found.
Dubey, Sudipta; Deshmukh, Mandar M.
2016-07-01
We probe quantum Hall effect in a tunable 1-D lateral superlattice (SL) in graphene created using electrostatic gates. Lack of equilibration is observed along edge states formed by electrostatic gates inside the superlattice. We create strong local electric field at the interface of regions of different charge densities. Crossed electric and magnetic fields modify the wavefunction of the Landau Levels (LLs) - a phenomenon unique to graphene. In the region of copropagating electrons and holes at the interface, the electric field is high enough to modify the Landau levels resulting in increased scattering that tunes equilibration of edge states and this results in large longitudinal resistance.
Lapa, Matthew F.; Jian, Chao-Ming; Ye, Peng; Hughes, Taylor L.
2017-01-01
We calculate the topological part of the electromagnetic response of bosonic integer quantum Hall (BIQH) phases in odd (space-time) dimensions, and bosonic topological insulator (BTI) and bosonic chiral semimetal (BCSM) phases in even dimensions. To do this, we use the nonlinear sigma model (NLSM) description of bosonic symmetry-protected topological (SPT) phases, and the method of gauged Wess-Zumino (WZ) actions. We find the surprising result that for BIQH states in dimension 2 m -1 (m =1 ,2 ,⋯ ), the bulk response to an electromagnetic field Aμ is characterized by a Chern-Simons term for Aμ with a level quantized in integer multiples of m ! (factorial). We also show that BTI states (which have an extra Z2 symmetry) can exhibit a Z2-breaking quantum Hall effect on their boundaries, with this boundary quantum Hall effect described by a Chern-Simons term at level m/! 2 . We show that the factor of m ! can be understood by requiring gauge invariance of the exponential of the Chern-Simons term on a general Euclidean manifold, and we also use this argument to characterize the electromagnetic and gravitational responses of fermionic SPT phases with U(1 ) symmetry in all odd dimensions. We then use our gauged boundary actions for the BIQH and BTI states to (i) construct a bosonic analog of a chiral semimetal (BCSM) in even dimensions, (ii) show that the boundary of the BTI state exhibits a bosonic analog of the parity anomaly of Dirac fermions in odd dimensions, and (iii) study anomaly inflow at domain walls on the boundary of BTI states. In a series of Appendixes we derive important formulas and additional results. In particular, in Appendix A we use the connection between equivariant cohomology and gauged WZ actions to give a mathematical interpretation of the actions for the BIQH and BTI boundaries constructed in this paper.
Fractional quantum Hall bilayers at half filling: Tunneling-driven non-Abelian phase
Zhu, W.; Liu, Zhao; Haldane, F. D. M.; Sheng, D. N.
2016-12-01
Multicomponent quantum Hall systems with internal degrees of freedom provide a fertile ground for the emergence of exotic quantum liquids. Here, we investigate the possibility of non-Abelian topological order in the half-filled fractional quantum Hall (FQH) bilayer system driven by the tunneling effect between two layers. By means of the state-of-the-art density-matrix renormalization group, we unveil "fingerprint" evidence of the non-Abelian Moore-Read Pfaffian state emerging in the intermediate-tunneling regime, including the ground-state degeneracy on the torus geometry and the topological entanglement spectroscopy (entanglement spectrum and topological entanglement entropy) on the spherical geometry, respectively. Remarkably, the phase transition from the previously identified Abelian (331) Halperin state to the non-Abelian Moore-Read Pfaffian state is determined to be continuous, which is signaled by the continuous evolution of the universal part of the entanglement spectrum, and discontinuities in the excitation gap and the derivative of the ground-state energy. Our results not only provide a "proof-of-principle" demonstration of realizing a non-Abelian state through coupling different degrees of freedom, but also open up a possibility in FQH bilayer systems for detecting different chiral p -wave pairing states.
Quantum spin Hall phase in 2D trigonal lattice
Wang, Z. F.; Jin, Kyung-Hwan; Liu, Feng
2016-09-01
The quantum spin Hall (QSH) phase is an exotic phenomena in condensed-matter physics. Here we show that a minimal basis of three orbitals (s, px, py) is required to produce a QSH phase via nearest-neighbour hopping in a two-dimensional trigonal lattice. Tight-binding model analyses and calculations show that the QSH phase arises from a spin-orbit coupling (SOC)-induced s-p band inversion or p-p bandgap opening at Brillouin zone centre (Γ point), whose topological phase diagram is mapped out in the parameter space of orbital energy and SOC. Remarkably, based on first-principles calculations, this exact model of QSH phase is shown to be realizable in an experimental system of Au/GaAs(111) surface with an SOC gap of ~73 meV, facilitating the possible room-temperature measurement. Our results will extend the search for substrate supported QSH materials to new lattice and orbital types.
Towards a Better Understanding of the Anomalous Hall Effect
Yue, Di; Jin, Xiaofeng
2017-01-01
Recent experimental efforts to identify the intrinsic and extrinsic contributions in the anomalous Hall effect are reviewed. Benefited from the experimental control of artificial impurity density in single crystalline magnetic thin films, a comprehensive physical picture of the anomalous Hall effect involving multiple competing scattering processes has been established. Some new insights into the microscopic mechanisms of the anomalous Hall effect are discussed.
Improved Hall-Effect Sensors For Magnetic Memories
Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.; Chen, Y. C.; Bhattacharya, Pallab K.
1993-01-01
High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Ezawa, Z. F.; Tsitsishvili, G.; Hasebe, K.
2003-03-01
Noncommutative geometry governs the physics of quantum Hall (QH) effects. We introduce the Weyl ordering of the second quantized density operator to explore the dynamics of electrons in the lowest Landau level. We analyze QH systems made of N-component electrons at the integer filling factor ν=k⩽N. The basic algebra is the SU(N)-extended W∞. A specific feature is that noncommutative geometry leads to a spontaneous development of SU(N) quantum coherence by generating the exchange Coulomb interaction. The effective Hamiltonian is the Grassmannian GN,k sigma model, and the dynamical field is the Grassmannian GN,k field, describing k(N-k) complex Goldstone modes and one kind of topological solitons (Grassmannian solitons).
Arapov, Yu G; Kharus, G I; Shelushinina, N G; Yakunin, M V; Kuznetsov, O A
2002-01-01
The temperature (0.1 <= T <= 20 K) and magnetic field (0 <= B <= 12 T) dependences of both longitudinal (rho sub x sub x) and Hall (rho sub x sub y) resistivities for the p-Ge/Ge sub 1 sub - sub x Si sub x (x = 0.07) multilayer heterostructures with hole densities p = (2.4-2.6) x 10 sup 1 sup 1 cm sup - sup 2 and mobilities mu = (1.1-1.7) x 10 sup 4 cm sup 2 /(V s) are studied. The two-dimensional hole gas energy spectrum parameters in a quantum Hall effect regime are obtained. The width of the mobility gap is W = (2.0-2.5) meV for the filling factors nu = 1 and 2, but the background localized energy-level density is g sub c = (5-7) x 10 sup 1 sup 0 cm sup - sup 2 meV sup - sup 1. The large-scale impurity potential models for the selectivity-doped two-dimensional systems are used for the interpretation of results obtained
Geometric Photonic Spin Hall Effect with Metapolarization
2014-01-01
We develop a geometric photonic spin Hall effect (PSHE) which manifests as spin-dependent shift in momentum space. It originates from an effective space-variant Pancharatnam-Berry (PB) phase created by artificially engineering the polarization distribution of the incident light. Unlikely the previously reported PSHE involving the light-matter interaction, the resulting spin-dependent splitting in the geometric PSHE is purely geometrically depend upon the polarization distribution of light whi...
Topological thermal Hall effect in frustrated kagome antiferromagnets
Owerre, S. A.
2017-01-01
In frustrated magnets the Dzyaloshinsky-Moriya interaction (DMI) arising from spin-orbit coupling can induce a magnetic long-range order. Here, we report a theoretical prediction of the thermal Hall effect in frustrated kagome magnets such as KCr3(OH) 6(SO4) 2 and KFe3(OH) 6(SO4)2 . The thermal Hall effects in these materials are induced by scalar spin chirality as opposed to DMI in previous studies. The scalar spin chirality originates from the magnetic-field-induced chiral spin configuration due to noncoplanar spin textures, but in general it can be spontaneously developed as a macroscopic order parameter in chiral quantum spin liquids. Therefore, we infer that there is a possibility of the thermal Hall effect in frustrated kagome magnets such as herbertsmithite ZnCu3(OH) 6Cl2 and the chromium compound Ca10Cr7O28 , although they also show evidence of magnetic long-range order in the presence of applied magnetic field or pressure.
Gu, Yingfei; Wen, Xueda; Cho, Gil Young; Ryu, Shinsei; Qi, Xiao-Liang
2016-01-01
In this paper, we study $(2+1)$-dimensional quantum anomalous Hall states, i.e. band insulators with quantized Hall conductance, using the exact holographic mapping. The exact holographic mapping is an approach to holographic duality which maps the quantum anomalous Hall state to a different state living in $(3+1)$-dimensional hyperbolic space. By studying topological response properties and the entanglement spectrum, we demonstrate that the holographic dual theory of a quantum anomalous Hall state is a $(3+1)$-dimensional topological insulator. The dual description enables a new characterization of topological properties of a system by the quantum entanglement between degrees of freedom at different length scales.
Lu, Y. M.
2013-03-05
Scaling of the anomalous Hall conductivity to longitudinal conductivity σAH∝σ2xx has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films, while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σAH∝σ1.6xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.
Observation of a fractional quantum Hall state at v=1/4 in a wide GaAs quantum well.
Energy Technology Data Exchange (ETDEWEB)
Pan, Wei; Tsui, Daniel Chee (Princeton University, Princeton, NJ); Baldwin, K. W. (Bell Labs, Lucent Technologies, Murray Hill, NJ); West, Ken W. (Bell Labs, Lucent Technologies, Murray Hill, NJ); Pfeiffer, Loren N.; Luhman, D. R. (Princeton University, Princeton, NJ)
2008-10-01
We report the observation of an even-denominator fractional quantum Hall state at {nu}=1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n{sub e}=2.55 x 10{sup 11} cm{sup -2}. We have performed transport measurements at T{approx}35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at {nu}=1/4. Upon tilting the sample to an angle of {theta}=20.3{sup o} a clear fractional quantum Hall state emerges at {nu}=1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.
Interaction-induced quantum anomalous Hall phase in bilayers of 3d transition-metal oxide
Wang, Yilin; Fang, Zhong; Dai, Xi
2014-03-01
In the present paper, we have studied the electronic structure of 3d transition-metal oxide LaCoO3 thin film grown on the [111] surface of SrTiO3. By using first-principles calculation under local density approximation implemented with Gutzwiller variational method (LDA+G), we have studied the bilayer systems of LaCoO3 thin films grown along the [111] direction on SrTiO3. The LDA results show that two nearly flat bands locate at the top and bottom of eg bands of Co atoms, and the Fermi level crosses the lower one, which is almost half-filled. After including both the spin-orbit coupling and the rotational invariant Coulomb interaction in the LDA+G method, we found that the Coulomb interaction will enhance the effective spin-orbit coupling, and a ferromagnetic insulator phase with a gap as large as 0.15 eV will be stabilized. Further calculations indicate that such a ferromagnetic insulator phase will have non zero Chern number one leading to quantum anomalous Hall effect. Increasing Hund's rule coupling in this system will generate a low spin to high spin transition and destroy the quantum anomalous Hall phase.
Universal transport signatures of topological superconductivity in quantum spin Hall architectures
Lee, Shu-Ping; Aasen, David; Karzig, Torsten; Alicea, Jason
2015-03-01
Interfacing s-wave superconductors with quantum spin Hall systems provides a promising route to ``engineered'' topological superconductivity. Given exciting recent progress on the fabrication side, identifying experiments that definitively expose the topological superconducting phase (and clearly distinguish it from a trivial state) raises an increasingly important problem. With this goal in mind we use renormalization group methods to extract universal transport characteristics of superconductor/quantum spin Hall heterostructures where the native edge states serve as a lead. Interestingly, arbitrarily weak interactions induce qualitative changes in the behavior relative to the free-fermion limit, leading to a sharp dichotomy in conductance for the trivial (narrow superconductor) and topological (wide superconductor) cases. Furthermore, we find that strong interactions can in principle induce power-law-localized ``parafermion'' excitations at a superconductor/quantum spin Hall junction. NSF Grant DMR-1341822. (2) Institute for Quantum Information and Matter, an NSF physics frontier center with support from the Moore Foundation.
Accurate micro Hall effect measurements on scribe line pads
DEFF Research Database (Denmark)
Østerberg, Frederik Westergaard; Petersen, Dirch Hjorth; Wang, Fei
2009-01-01
Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can...
Thermal Characterization of a Hall Effect Thruster
2008-03-01
Material Curie Temperature Iron 770 °C Nickel 358 °C Cobalt 1130 °C Gadolinium 20 °C Terfenol 380-430 °C Alnico 850 °C Hard Ferrites 400-700...C Barium Ferrite 450 °C Hall Effect thrusters generally use iron magnets with a Curie temperature of 770 °C. Decreasing the magnetic strength
Reprint of : Nanomagnet coupled to quantum spin Hall edge: An adiabatic quantum motor
Arrachea, Liliana; von Oppen, Felix
2016-08-01
The precessing magnetization of a magnetic islands coupled to a quantum spin Hall edge pumps charge along the edge. Conversely, a bias voltage applied to the edge makes the magnetization precess. We point out that this device realizes an adiabatic quantum motor and discuss the efficiency of its operation based on a scattering matrix approach akin to Landauer-Büttiker theory. Scattering theory provides a microscopic derivation of the Landau-Lifshitz-Gilbert equation for the magnetization dynamics of the device, including spin-transfer torque, Gilbert damping, and Langevin torque. We find that the device can be viewed as a Thouless motor, attaining unit efficiency when the chemical potential of the edge states falls into the magnetization-induced gap. For more general parameters, we characterize the device by means of a figure of merit analogous to the ZT value in thermoelectrics.
Parallel Hall effect from 3D single-component metamaterials
Kern, Christian; Wegener, Martin
2015-01-01
We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum that lead to unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel---rather than orthogonal---to the external static magnetic-field vector ("parallel Hall effect"). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations
High-order multipole radiation from quantum Hall states in Dirac materials
Gullans, Michael J.; Taylor, Jacob M.; Imamoǧlu, Ataç; Ghaemi, Pouyan; Hafezi, Mohammad
2017-06-01
We investigate the optical response of strongly disordered quantum Hall states in two-dimensional Dirac materials and find qualitatively different effects in the radiation properties of the bulk versus the edge. We show that the far-field radiation from the edge is characterized by large multipole moments (>50 ) due to the efficient transfer of angular momentum from the electrons into the scattered light. The maximum multipole transition moment is a direct measure of the coherence length of the edge states. Accessing these multipole transitions would provide new tools for optical spectroscopy and control of quantum Hall edge states. On the other hand, the far-field radiation from the bulk appears as random dipole emission with spectral properties that vary with the local disorder potential. We determine the conditions under which this bulk radiation can be used to image the disorder landscape. Such optical measurements can probe submicron-length scales over large areas and provide complementary information to scanning probe techniques. Spatially resolving this bulk radiation would serve as a novel probe of the percolation transition near half filling.
Exotic Non-Abelian Topological Defects in Lattice Fractional Quantum Hall States
Liu, Zhao; Möller, Gunnar; Bergholtz, Emil J.
2017-09-01
We investigate extrinsic wormholelike twist defects that effectively increase the genus of space in lattice versions of multicomponent fractional quantum Hall systems. Although the original band structure is distorted by these defects, leading to localized midgap states, we find that a new lowest flat band representing a higher genus system can be engineered by tuning local single-particle potentials. Remarkably, once local many-body interactions in this new band are switched on, we identify various Abelian and non-Abelian fractional quantum Hall states, whose ground-state degeneracy increases with the number of defects, i.e, with the genus of space. This sensitivity of topological degeneracy to defects provides a "proof of concept" demonstration that genons, predicted by topological field theory as exotic non-Abelian defects tied to a varying topology of space, do exist in realistic microscopic models. Specifically, our results indicate that genons could be created in the laboratory by combining the physics of artificial gauge fields in cold atom systems with already existing holographic beam shaping methods for creating twist defects.
AdS/QHE: towards a holographic description of quantum Hall experiments
Energy Technology Data Exchange (ETDEWEB)
Bayntun, Allan; Burgess, C P; Lee, Sung-Sik [Department of Physics and Astronomy, McMaster University, 1280 Main Street West, Hamilton, ON (Canada); Dolan, Brian P, E-mail: bayntun@mcmaster.ca [Department of Mathematical Physics, National University of Ireland, Maynooth (Ireland)
2011-03-15
Transitions among quantum Hall plateaux share a suite of remarkable experimental features, such as semicircle laws and duality relations, whose accuracy and robustness are difficult to explain directly in terms of the detailed dynamics of the microscopic electrons. They would naturally follow if the low-energy transport properties were governed by an emergent discrete duality group relating the different plateaux, but no explicit examples of interacting systems having such a group are known. Recent progress using the AdS/CFT correspondence has identified examples with similar duality groups, but without the dc ohmic conductivity characteristic of quantum Hall experiments. We use this to propose a simple holographic model for low-energy quantum Hall systems, with a nonzero dc conductivity that automatically exhibits all of the observed consequences of duality, including the existence of the plateaux and the semicircle transitions between them. The model can be regarded as a strongly coupled analogue of the old 'composite boson' picture of quantum Hall systems. Non-universal features of the model can be used to test whether it describes actual materials, and we comment on some of these in our proposed model. In particular, the model indicates the value 2/5 for low-temperature scaling exponents for transitions among quantum Hall plateaux, in agreement with the measured value 0.42{+-}0.01.
Can Hall drag be observed in Coulomb coupled quantum wells in a magnetic field?
DEFF Research Database (Denmark)
Hu, Ben Yu-Kuang
1997-01-01
We study the transresistivity rho(21) (or equivalently, the drag rate) of two Coulomb-coupled quantum wells in the presence of a perpendicular magnetic field, using semi-classical transport theory. Elementary arguments seem to preclude any possibility of observation of ''Hall drag'' (i.e., a non......-zero off-diagonal component in rho(21)). We show that these arguments are specious, and in fact Hall drag can be observed at sufficiently high temperatures when the intralayer transport time tau has significant energy-dependence around the Fermi energy epsilon(F). The ratio of the Hall to longitudinal...
A Magnetic Balance with Hall Effect Sensors
Sawada, Hideo; Kunimasu, Tetsuya; Suda, Shinichi; Mizoguti, Yasushi; Okada, Takumi
Magnetic force acting on a model fixed at the center of the JAXA 60cm MSBS was measured with an industry manufactured balance system when MSBS control coil currents were varied. At the same time, magnetic field intensity was also measured with 11 Hall sensors, which were arranged around the MSBS test section. From relations between coil currents and its corresponding controlled magnetic forces, regressive curves were given and maximum deviation from the curves was evaluated. From relations between Hall sensor outputs and the magnetic forces, regressive curves and deviation were also obtained. Obtained results show Hall sensor outputs are much better indexes of balance than the coil currents. The maximum deviations were reduced to a half or one-third times as much as those evaluated using the control coil currents. However, when couples acting on the model are controlled, they are not effective to reduce hysteresis phenomenon in the relation. The deviation can be reduced by decreasing the range of calibration. Then, the error of the balance of the MSBS was reduced to about 1% of the calibration range.
Terahertz spectroscopy on Faraday and Kerr rotations in a quantum anomalous Hall state.
Okada, Ken N; Takahashi, Youtarou; Mogi, Masataka; Yoshimi, Ryutaro; Tsukazaki, Atsushi; Takahashi, Kei S; Ogawa, Naoki; Kawasaki, Masashi; Tokura, Yoshinori
2016-07-20
Electrodynamic responses from three-dimensional topological insulators are characterized by the universal magnetoelectric term constituent of the Lagrangian formalism. The quantized magnetoelectric coupling, which is generally referred to as topological magnetoelectric effect, has been predicted to induce exotic phenomena including the universal low-energy magneto-optical effects. Here we report the experimental indication of the topological magnetoelectric effect, which is exemplified by magneto-optical Faraday and Kerr rotations in the quantum anomalous Hall states of magnetic topological insulator surfaces by terahertz magneto-optics. The universal relation composed of the observed Faraday and Kerr rotation angles but not of any material parameters (for example, dielectric constant and magnetic susceptibility) well exhibits the trajectory towards the fine structure constant in the quantized limit.
Directory of Open Access Journals (Sweden)
Toru Tomimatsu
2015-08-01
Full Text Available Electric-field-induced nuclear resonance (NER: nuclear electric resonance involving quantum Hall states (QHSs was studied at various filling factors by exploiting changes in nuclear spins polarized at quantum Hall breakdown. Distinct from the magnetic dipole interaction in nuclear magnetic resonance, the interaction of the electric-field gradient with the electric quadrupole moment plays the dominant role in the NER mechanism. The magnitude of the NER signal strongly depends on whether electronic states are localized or extended. This indicates that NER is sensitive to the screening capability of the electric field associated with QHSs.
Anisotropic Quantum Hall Liquid States with No Translational Invariance in the Lowest Landau Level
Ciftja, Orion
2016-05-01
Strongly correlated two-dimensional electron systems in a high perpendicular magnetic field have displayed remarkable new physics leading to the discovery of phenomena such as the integer and the fractional quantum Hall effect, to mention a few. Laughlin's theoretical model and the composite fermion's (CFs) approach provide a good description of the liquid electronic phases in the lowest Landau level (LLL) at relatively large filling factors. Other electronic phases at smaller filling factors of the LLL likely represent electronic Wigner solid states. It is believed that no other phases with intermediate order stabilize at the liquid-solid transition region. The current study deals with filling factor 1/6 in the LLL, a state which is very close to the critical filling factor where the liquid-solid transition takes place. With the assumption that the underlying signs of crystalline order are starting to appear at this transitional regime, we focus our attention and study the properties of a hybrid electronic phase that lacks translational invariance. To describe such a state, we consider a wave function that lies entirely in the LLL but, unlike a typical quantum Hall liquid phase, does not possess translational invariance. Although inspired by Laughlin's approach, the wave function we introduce differs from Laughlin's or CFs wave functions that describe translationally invariant uniform electronic phases. We perform quantum Monte Carlo simulations in a standard disk geometry to gain a better understanding of the properties of this wave function that may be considered as a precursor to the more conventional Wigner crystal phase.
Effective Field Theory of Fractional Quantized Hall Nematics
Energy Technology Data Exchange (ETDEWEB)
Mulligan, Michael; /MIT, LNS; Nayak, Chetan; /Station Q, UCSB; Kachru, Shamit; /Stanford U., Phys. Dept. /SLAC
2012-06-06
We present a Landau-Ginzburg theory for a fractional quantized Hall nematic state and the transition to it from an isotropic fractional quantum Hall state. This justifies Lifshitz-Chern-Simons theory - which is shown to be its dual - on a more microscopic basis and enables us to compute a ground state wave function in the symmetry-broken phase. In such a state of matter, the Hall resistance remains quantized while the longitudinal DC resistivity due to thermally-excited quasiparticles is anisotropic. We interpret recent experiments at Landau level filling factor {nu} = 7/3 in terms of our theory.
Kleinbaum, Ethan; Deng, Nianpei; Gardner, Geoffrey; Manfra, Michael; Csathy, Gabor
2015-03-01
The unique character and potential application of the even denominator v =5/2 fractional quantum hall state has elicited significant interest. Yet, the most basic properties of this ground state remain unexplained. One poorly understood effect is that of the various types of disorder. We report energy gaps at the filling factor v =7/2 in a series of samples into which we intentionally added aluminum impurities during the MBE growth. These data, together with the availability of energy gaps at v =5/2 in the same samples, allows us to quantify the disorder broadening and the intrinsic gap of the even denominator fractional quantum Hall states. This work was supported by DOE DE-SC000671.
Quantitative examination of the collapse of spin splitting in the quantum Hall regime
Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.
2011-10-01
We have quantitatively tested the theoretical model on the collapse of spin slitting in the quantum Hall effect regime proposed by Fogler and Shklovskii [Phys. Rev. BPLRBAQ0556-280510.1103/PhysRevB.52.17366 52, 17366 (1995)] in a high-mobility two-dimensional electron system (2DES) realized in a heterojunction insulated-gate field-effect transistor. In the 2DES density range between n = 2 × 1010 and 2 × 1011 cm-2, the Landau level number N displays a power-law dependence on the critical electron density nc where the spin splitting collapses and N = 11.47 × nc0.64±0.01 (nc is in units of 1011 cm-2). This power-law dependence is in good agreement with the theoretical prediction in the low-density regime.
The string universe high T$_{c}$ superconductor or quantum Hall conductor?
Ellis, Jonathan Richard; Nanopoulos, Dimitri V
1992-01-01
Our answer is the latter. Space-time singularities, including the initial one, are described by world-sheet topological Abelian gauge theories with a Chern-Simons term. Their effective $N=2$ supersymmetry provides an initial fixed point where the Bogomolny bound is saturated on the world-sheet, corresponding to an extreme Reissner-Nordstrom solution in space-time. Away from the singularity the gauge theory has world-sheet matter fields, bosons and fermions, associated with the generation of target space-time. Because the fermions are complex (cf the Quantum Hall Effect) rather than real (cf high-$T_c$ superconductors) the energetically-preferred vacuum is not parity or time-reversal invariant, and the associated renormalization group flow explains the cosmological arrow of time, as well as the decay of real or virtual black holes, with a monotonic increase in entropy.
Anomalous Hall Effect in a Kagome Ferromagnet
Ye, Linda; Wicker, Christina; Suzuki, Takehito; Checkelsky, Joseph; Joseph Checkelsky Team
The ferromagnetic kagome lattice is theoretically known to possess topological band structures. We have synthesized large single crystals of a kagome ferromagnet Fe3Sn2 which orders ferromagnetically well above room temperature. We have studied the electrical and magnetic properties of these crystals over a broad temperature and magnetic field range. Both the scaling relation of anomalous Hall effect and anisotropic magnetic susceptibility show that the ferromagnetism of Fe3Sn2 is unconventional. We discuss these results in the context of magnetism in kagome systems and relevance to the predicted topological properties in this class of compounds. This research is supported by DMR-1231319.
Commemorative Symposium on the Hall Effect and its Applications
Westgate, C
1980-01-01
In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes t...
Lapa, Matthew F; Ye, Peng; Hughes, Taylor L
2016-01-01
We calculate the topological part of the electromagnetic response of Bosonic Integer Quantum Hall (BIQH) phases in odd (spacetime) dimensions, and Bosonic Topological Insulator (BTI) and Bosonic chiral semi-metal (BCSM) phases in even dimensions. To do this we use the Nonlinear Sigma Model (NLSM) description of bosonic symmetry-protected topological (SPT) phases, and the method of gauged Wess-Zumino (WZ) actions. We find the surprising result that for BIQH states in dimension $2m-1$ ($m=1,2,\\dots$), the bulk response to an electromagnetic field $A_{\\mu}$ is characterized by a Chern-Simons term for $A_{\\mu}$ with a level quantized in integer multiples of $m!$ (factorial). We also show that BTI states (which have an extra $\\mathbb{Z}_2$ symmetry) can exhibit a $\\mathbb{Z}_2$ breaking Quantum Hall effect on their boundaries, with this boundary Quantum Hall effect described by a Chern-Simons term at level $\\frac{m!}{2}$. We show that the factor of $m!$ can be understood by requiring gauge invariance of the expone...
MAGNETORESISTANCE AND HALL EFFECT IN SINGLE CRYSTALS OF ALUMINUM
ALUMINUM, *SINGLE CRYSTALS, CRYSTALS, HALL EFFECT , IMPURITIES, LOW PRESSURE, MAGNETIC FIELDS, MAGNETIC PROPERTIES, PARTICLE TRAJECTORIES, ELECTRICAL RESISTANCE, SOLID STATE PHYSICS, SURFACE PROPERTIES.
Large anomalous Hall effect in a half-Heusler antiferromagnet
Suzuki, T.; Chisnell, R.; Devarakonda, A.; Liu, Y.-T.; Feng, W.; Xiao, D.; Lynn, J. W.; Checkelsky, J. G.
2016-12-01
The quantum mechanical (Berry) phase of the electronic wavefunction plays a critical role in the anomalous and spin Hall effects, including their quantized limits. While progress has been made in understanding these effects in ferromagnets, less is known in antiferromagnetic systems. Here we present a study of antiferromagnet GdPtBi, whose electronic structure is similar to that of the topologically non-trivial HgTe (refs ,,), and where the Gd ions offer the possibility to tune the Berry phase via control of the spin texture. We show that this system supports an anomalous Hall angle ΘAH > 0.1, comparable to the largest observed in bulk ferromagnets and significantly larger than in other antiferromagnets. Neutron scattering measurements and electronic structure calculations suggest that this effect originates from avoided crossing or Weyl points that develop near the Fermi level due to a breaking of combined time-reversal and lattice symmetries. Berry phase effects associated with such symmetry breaking have recently been explored in kagome networks; our results extend this to half-Heusler systems with non-trivial band topology. The magnetic textures indicated here may also provide pathways towards realizing the topological insulating and semimetallic states predicted in this material class.
Estimates of Quantities in a Hall Effect Geodynamo Theory
Directory of Open Access Journals (Sweden)
Annraoi M de Paor
2008-01-01
Full Text Available Currents, resistances, dynamo constant, Hall voltage coefficient and inductances are estimated for the author’s geodynamo theory incorporating the Hall Effect. It is concluded that the Hall Coefficient in the bulk liquid core of the Earth is approximately 1.512x10-1, orders of magnitude greater than in normal liquid metals. The ordering effect of enormous pressure is a possible cause.
Estimates of quantities in a Hall effect geodynamo theory
Annraoi M de Paor
2008-01-01
Currents, resistances, dynamo constant, Hall voltage coefficient and inductances are estimated for the author’s geodynamo theory incorporating the Hall Effect. It is concluded that the Hall Coefficient in the bulk liquid core of the Earth is approximately 1.512x10-1, orders of magnitude greater than in normal liquid metals. The ordering effect of enormous pressure is a possible cause.
Pseudospectral Model for Hybrid PIC Hall-effect Thruster Simulation
2015-07-01
1149. 8Goebel, D. M. and Katz, I., Fundamentals of Electric Propulsion : Ion and Hall Thrusters, John Wiley & Sons, Inc., 2008. 9Martin, R., J.W., K...Bilyeu, D., and Tran, J., “Dynamic Particle Weight Remapping in Hybrid PIC Hall -effect Thruster Simulation,” 34th Int. Electric Propulsion Conf...Paper 3. DATES COVERED (From - To) July 2015-July 2015 4. TITLE AND SUBTITLE Pseudospectral model for hybrid PIC Hall -effect thruster simulationect
Observation of fractional Bloch band quantum Hall states in graphene/h-BN superlattices
Wang, Lei; Gao, Yuanda; Wen, Bo; Hone, James; Dean, Cory
The Hofstadter energy spectrum provides a uniquely tunable system to study emergent topological order in the regime of strong interactions. Previous experiments, however, have been limited to low Bloch band fillings where only the Landau level index plays a role. Here we report measurements of high mobility graphene superlattices where the complete unit cell of the Hofstadter spectrum is accessible. We observe coexistence of conventional fractional quantum Hall effect (QHE) states together with the integer QHE states associated with the fractal Hofstadter spectrum. At large magnetic field, we observe signatures of another series of states, which appears at fractional Bloch filling index. These fractional Bloch band QHE states are not anticipated by existing theoretical pictures and point towards a distinct type of many-body state.
Prediction of Quantum Anomalous Hall Insulator in Functionalized GaBi Honeycomb
Crisostomo, Christian; Chen, Sung-Ping; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun
Using first-principles electronic calculations, we predict functionalized GaBi honeycomb under tensile strain to harbor quantum anomalous hall (QAH) insulating phase. A single band inversion at Γ point was found in spin-polarized band structure of half-fluorinated planar strained GaBi. In order to confirm the topological properties, we evaluated the Chern number (C) and found that C = 1, indicating the presence of QAH phase. Additionally, the same value was also obtained by using hydrogen atoms, instead of fluorine atoms, as the adsorbate in both planar and buckled GaBi. Moreover, the electronic spectrum of a half-fluorinated GaBi nanoribbon with armchair or zigzag edges possess only one edge band crossing the Fermi level within the band gap. Finally, a suitable substrate which could induce the similar effect of half-hydrogenation or half-fluorination on the GaBi honeycomb could be used for spintronic devices.
Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films
Wang, Dongchao; Chen, Li; Shi, Changmin; Wang, Xiaoli; Cui, Guangliang; Zhang, Pinhua; Chen, Yeqing
2016-03-01
Based on first-principles calculations, we propose one new category of two-dimensional topological insulators (2D TIs) in chemically functionalized (-CH3 and -OH) arsenene films. The results show that the surface decorated arsenene (AsCH3 and AsOH) films are intrinsic 2D TIs with sizeable bulk gap. The bulk energy gaps are 0.184 eV, and 0.304 eV in AsCH3 and AsOH films, respectively. Such large bulk gaps make them suitable to realize quantum spin Hall effect in an experimentally accessible temperature regime. Topologically helical edge states in these systems are desirable for dissipationless transport. Moreover, we find that the topological properties in these systems are robust against mechanical deformation by exerting biaxial strain. These novel 2D TIs with large bulk gaps are potential candidate in future electronic devices with ultralow dissipation.
Fractional Quantum Hall Filling Factors from String Theory using Toric Geometry
Belhaj, A; Idrissi, M El; Manaut, B; Sebbar, A; Sedra, M B
2015-01-01
Using toric Cartan matrices as abelian gauge charges, we present a class of stringy fractional quantum Hall effect (FQHE) producing some recent experimental observed filling factor values. More precisely, we derive the corresponding Chern-Simons type models from M-theory compactified on four complex dimensional hyper-K\\"{a}hler manifolds X^4. These manifolds, which are viewed as target spaces of a particular N=4 sigma model in two dimensions, are identified with the cotangent bundles over intersecting 2-dimensional toric varieties V_i^2 according to toric Cartan matrices. Exploring results of string dualities, the presented FQHE can be obtained from D6-banes wrapping on such intersecting toric varieties interacting with R-R gauge fields. This string theory realization provides a geometric interpretation of the filling factors in terms of toric and Euler characteristic topological data of the compactified geometry. Concretely, explicit bilayer models are worked out in some details.
Anderson Localization from the Berry-Curvature Interchange in Quantum Anomalous Hall Systems
Qiao, Zhenhua; Han, Yulei; Zhang, Lei; Wang, Ke; Deng, Xinzhou; Jiang, Hua; Yang, Shengyuan A.; Wang, Jian; Niu, Qian
2016-07-01
We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE stays quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the interchange of Berry curvatures carried, respectively, by the conduction and valence bands. In the end, we provide a phenomenological picture related to the topological charges to better understand the underlying physical origin of the QAHE Anderson localization.
4pi periodic Josephson current through a Quantum Spin-Hall edge
Dahlhaus, Jan; Beenakker, Carlo; Pikulin, Dmitry; Hyart, Timo; Schomerus, Henning
2014-03-01
The helical edge state of a quantum spin-Hall insulator can carry a supercurrent in equilibrium between two superconducting electrodes (separation L, coherence length ?). We calculate the maximum (critical) current Ic that can flow without dissipation along a single edge, going beyond the short-junction restriction L?? of earlier work, and find a dependence on the fermion parity of the ground state when L becomes larger than ?. Fermion-parity conservation doubles the critical current in the low-temperature, long-junction limit, while for a short junction Ic is the same with or without parity constraints. This provides a phase-insensitive, dc signature of the 4?-periodic Josephson effect.
Xu, Yong; Uddin, Salah; Wang, Jun; Wu, Jiansheng; Liu, Jun-Feng
2017-08-08
We have studied numerically the penetration depth of quantum spin hall edge states in chiral honeycomb nanoribbons based on the Green's function method. The changing of edge orientation from armchair to zigzag direction decreases the penetration depth drastically. The penetration depth is used to estimate the gap opened for the finite-size effect. Beside this, we also proposed a nonlocal transistor based on the zigzag-like chiral ribbons in which the current is carried at one edge and the manipulation is by the edge magnetization at the other edge. The difficulty that the edge magnetization is unstable in the presence of a ballistic current can be removed by this nonlocal manipulation.
Interaction-induced quantum anomalous Hall phase in (111) bilayer of LaCoO3
Wang, Yilin; Wang, Zhijun; Fang, Zhong; Dai, Xi
2015-03-01
In the present paper, the Gutzwiller density functional theory (LDA+G) has been applied to study the bilayer system of LaCoO3 grown along the (111 ) direction on SrTiO3. The LDA calculations show that there are two nearly flat bands located at the top and bottom of eg bands of Co atoms with the Fermi level crossing the lower one. After including both the spin-orbit coupling and the Coulomb interaction in the LDA+G method, we find that the interplay between spin-orbit coupling and Coulomb interaction stabilizes a very robust ferromagnetic insulator phase with the nonzero Chern number indicating the possibility of realizing the quantum anomalous Hall effect in this system.
Non-abelian quantum Hall states -- exclusion statistics, K-matrices and duality
Ardonne, E.; Bouwknegt, P.; Schoutens, K.
2001-01-01
We study excitations in edge theories for non-abelian quantum Hall states, focussing on the spin polarized states proposed by Read and Rezayi and on the spin singlet states proposed by two of the authors. By studying the exclusion statistics properties of edge-electrons and edge-quasiholes, we
NONEQUILIBRIUM DISTRIBUTION OF EDGE AND BULK CURRENT IN A QUANTUM HALL CONDUCTOR
VANSON, PC; DEVRIES, FW; KLAPWIJK, TM
1991-01-01
A quantitative model is presented that accounts for the experimental observation that four-terminal resistances of a high-mobility quantum Hall conductor cannot be related directly to a single resistivity tensor. The key ingredient is that the highest (partly occupied) Landau level is completely dec
Decomposition of fractional quantum Hall model states: product rule symmetries and approximations
Thomale, R.; Estienne, B.; Regnault, N.; Bernevig, B.A.
2011-01-01
We provide a detailed description of a product rule structure of the monomial (Slater) expansion coefficients of bosonic (fermionic) fractional quantum Hall (FQH) states derived recently, which we now extend to spin-singlet states. We show that the Haldane-Rezayi spin-singlet state can be obtained
Intrinsic valley Hall effect in graphene
Yang, Mou; Zhang, Wen-Lian; Liu, Hai; Bai, Yan-Kui
2017-04-01
If electrons are incident from an armchair graphene ribbon into the bulk graphene region, the electronic diffraction occurs. Because of the different triangular wrapping of the energy dispersion between valleys K and K ‧ , the electrons of valley K tend to be diffracted to one side and those of valley K ‧ to the other side. When the current is injected from the armchair ribbon of a four-terminal graphene device, the major portion of the incident current of valley K flows through one side arm and the minor portion through the other side arm. The ratio between them is derived to be 1 + 4 E / 3 in the low energy limit, where E is the energy in units of hopping parameter. The major arm for valley K is the minor arm for valley K ‧ . This results in the rise of the valley Hall effect, which is an intrinsic property of graphene stemming from the different electronic structure of the two valleys. The valley Hall conductance is calculated to be (2 E / 3)G0 with G0 being the conductance supported by the injection ribbon.
Axial Hall effect and universality of holographic Weyl semi-metals
Copetti, Christian; Landsteiner, Karl
2016-01-01
The holographic Weyl semimetal is a model of a strongly coupled topological semi-metal. A topological quantum phase transition separates a topological phase with non-vanishing anomalous Hall conductivity from a trivial state. We investigate how this phase transition depends on the parameters of the scalar potential (mass and quartic self coupling) finding that the quantum phase transition persists for a large region in parameter space. We then compute the axial Hall conductivity. The algebraic structure of the axial anomaly predicts it to be 1/3 of the electric Hall conductivity. We find that this holds once a non-trivial renormalization effect on the external axial gauge fields is taken into account. Finally we show that the phase transition also occurs in a top-down model based on a consistent truncation of type IIB supergravity.
Photonic spin Hall effect in topological insulators
Zhou, Xinxing; Ling, Xiaohui; Chen, Shizhen; Luo, Hailu; Wen, Shuangchun
2013-01-01
In this paper we theoretically investigate the photonic spin Hall effect (SHE) of a Gaussian beam reflected from the interface between air and topological insulators (TIs). The photonic SHE is attributed to spin-orbit coupling and manifests itself as in-plane and transverse spin-dependent splitting. We reveal that the spin-orbit coupling effect in TIs can be routed by adjusting the axion angle variations. Unlike the transverse spin-dependent splitting, we find that the in-plane one is sensitive to the axion angle. It is shown that the polarization structure in magneto-optical Kerr effect is significantly altered due to the spin-dependent splitting in photonic SHE. We theoretically propose a weak measurement method to determine the strength of axion coupling by probing the in-plane splitting of photonic SHE.
Hall effect in strongly correlated low dimensional systems
Leon Suros, Gladys Eliana; Berthod, Christophe; Giamarchi, Thierry
2006-01-01
We investigate the Hall effect in a quasi one-dimensional system made of weakly coupled Luttinger Liquids at half filling. Using a memory function approach, we compute the Hall coefficient as a function of temperature and frequency in the presence of umklapp scattering. We find a power-law correction to the free-fermion value (band value), with an exponent depending on the Luttinger parameter $K_{\\rho}$. At high enough temperature or frequency the Hall coefficient approaches the band value.
Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state.
Young, A F; Sanchez-Yamagishi, J D; Hunt, B; Choi, S H; Watanabe, K; Taniguchi, T; Ashoori, R C; Jarillo-Herrero, P
2014-01-23
Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires and graphene. Recently, a new method has emerged with the recognition that symmetry-protected topological (SPT) phases, which occur in systems with an energy gap to quasiparticle excitations (such as insulators or superconductors), can host robust surface states that remain gapless as long as the relevant global symmetry remains unbroken. The nature of the charge carriers in SPT surface states is intimately tied to the symmetry of the bulk, resulting in one- and two-dimensional electronic systems with novel properties. For example, time reversal symmetry endows the massless charge carriers on the surface of a three-dimensional topological insulator with helicity, fixing the orientation of their spin relative to their momentum. Weakly breaking this symmetry generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic spin textures. Analogous manipulations have yet to be demonstrated in two-dimensional topological insulators, where the primary example of a SPT phase is the quantum spin Hall state. Here we demonstrate experimentally that charge-neutral monolayer graphene has a quantum spin Hall state when it is subjected to a very large magnetic field angled with respect to the graphene plane. In contrast to time-reversal-symmetric systems, this state is protected by a symmetry of planar spin rotations that emerges as electron spins in a half-filled Landau level are polarized by the large magnetic field. The properties of the resulting helical edge states can be modulated by balancing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneously break the spin-rotation symmetry. In the resulting canted antiferromagnetic state, we observe transport signatures of gapped edge states
Geometric spin Hall effect of light with inhomogeneous polarization
Ling, Xiaohui; Zhou, Xinxing; Yi, Xunong
2017-01-01
The spin Hall effect of light originates from spin-orbit interaction of light, which manifests two types of geometric phases. In this paper, we report the observation of a geometric spin Hall effect by generating a light beam with inhomogeneous polarization distribution. Unlike the previously reported geometric spin Hall effect observed in a tilted beam-detector system, which is believed to result from an effective spin-redirection Berry geometric phase, the geometric spin Hall effect demonstrated here is attributed to an effective, spatially varying Pancharatnam-Berry geometric phase generated by the inhomogeneous polarization geometry. Our further experiments show that the geometric spin Hall effect can be tuned by tailoring the polarization geometry of light, demonstrating the spin states of photons can be steered with a great flexibility.
Geometric Photonic Spin Hall Effect with Metapolarization
Ling, Xiaohui; Yi, Xunong; Luo, Hailu; Wen, Shuangchun
2014-01-01
We develop a geometric photonic spin Hall effect (PSHE) which manifests as spin-dependent shift in momentum space. It originates from an effective space-variant Pancharatnam-Berry (PB) phase created by artificially engineering the polarization distribution of the incident light. Unlikely the previously reported PSHE involving the light-matter interaction, the resulting spin-dependent splitting in the geometric PSHE is purely geometrically depend upon the polarization distribution of light which can be tailored by assembling its circular polarization basis with suitably magnitude and phase. This metapolarization idea enables us to manipulate the geometric PSHE by suitably tailoring the polarization geometry of light. Our scheme provides great flexibility in the design of various polarization geometry and polarization-dependent application, and can be extrapolated to other physical system, such as electron beam or atom beam, with the similar spin-orbit coupling underlying.
Gauge Physics of Spin Hall Effect
Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi
2015-12-01
Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of -, and Rashba heavy hole instead of -. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity.
Useful Pedagogical Applications of the Classical Hall Effect
Houari, Ahmed
2007-01-01
One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…
Directory of Open Access Journals (Sweden)
Netanel H. Lindner
2012-10-01
Full Text Available We study the non-Abelian statistics characterizing systems where counterpropagating gapless modes on the edges of fractional quantum Hall states are gapped by proximity coupling to superconductors and ferromagnets. The most transparent example is that of a fractional quantum spin Hall state, in which electrons of one spin direction occupy a fractional quantum Hall state of ν=1/m, while electrons of the opposite spin occupy a similar state with ν=-1/m. However, we also propose other examples of such systems, which are easier to realize experimentally. We find that each interface between a region on the edge coupled to a superconductor and a region coupled to a ferromagnet corresponds to a non-Abelian anyon of quantum dimension sqrt[2m]. We calculate the unitary transformations that are associated with the braiding of these anyons, and we show that they are able to realize a richer set of non-Abelian representations of the braid group than the set realized by non-Abelian anyons based on Majorana fermions. We carry out this calculation both explicitly and by applying general considerations. Finally, we show that topological manipulations with these anyons cannot realize universal quantum computation.
Mesoscopic spin Hall effect in semiconductor nanostructures
Zarbo, Liviu
The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities
Magnetic circuit for hall effect plasma accelerator
Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Jankovsky, Robert S. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor)
2009-01-01
A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.
Device-width dependence of plateau width in quantum Hall states
Kawaji, S.; Hirakawa, K.; Nagata, M.
1993-02-01
Hall bar type devices having a total length of 2900 μm, a source and drain electrode width of 400 μm and different widths w ranging from 10 to 120 μm in its central 600 μm long part are fabricated from a GaAs/AlGaAs wafer with electron mobility of 21 m 2V -1s -1. The current at which the quantum Hall plateau for i=2 at B=9.7T at T=1.2K disappears is proportional to w. The average critical current density is Jcr=(1.6±0.2) A m -1
Antiferromagnetic skyrmion crystals: Generation, topological Hall, and topological spin Hall effect
Göbel, Börge; Mook, Alexander; Henk, Jürgen; Mertig, Ingrid
2017-08-01
Skyrmions are topologically nontrivial, magnetic quasiparticles that are characterized by a topological charge. A regular array of skyrmions, a skyrmion crystal (SkX), features the topological Hall effect (THE) of electrons, which, in turn, gives rise to the Hall effect of the skyrmions themselves. It is commonly believed that antiferromagnetic skyrmion crystals (AFM-SkXs) lack both effects. In this Rapid Communication, we present a generally applicable method to create stable AFM-SkXs by growing a two-sublattice SkX onto a collinear antiferromagnet. As an example we show that both types of skyrmion crystals, conventional and antiferromagnetic, exist in honeycomb lattices. While AFM-SkXs with equivalent lattice sites do not show a THE, they exhibit a topological spin Hall effect. On top of this, AFM-SkXs on inequivalent sublattices exhibit a nonzero THE, which may be utilized in spintronics devices. Our theoretical findings call for experimental realization.
Anomalous Hall effect sensors based on magnetic element doped topological insulator thin films
Ni, Yan; Zhang, Zhen; Nlebedim, Ikenna; Jiles, David
Anomalous Hall effect (AHE) is recently discovered in magnetic element doped topological insulators (TIs), which promises low power consumption highly efficient spintronics and electronics. This discovery broaden the family of Hall effect (HE) sensors. In this work, both HE and AHE sensor based on Mn and Cr doped Bi2Te3 TI thin films will be systematically studied. The influence of Mn concentration on sensitivity of MnxBi2-xTe3 HE sensors will be discussed. The Hall sensitivity increase 8 times caused by quantum AHE will be reported. AHE senor based on Cr-doped Bi2Te3 TI thin films will also be studied and compared with Mn doped Bi2Te3 AHE sensor. The influence of thickness on sensitivity of CrxBi2-xTe3 AHE sensors will be discussed. Ultrahigh Hall sensitivity is obtained in Cr doped Bi2Te3. The largest Hall sensitivity can reach 2620 Ω/T in sensor which is almost twice higher than that of the normal semiconductor HE sensor. Our work indicates that magnetic element doped topological insulator with AHE are good candidates for ultra-sensitive Hall effect sensors.
Formation of spin droplet at ν =5/2 in an asymmetric quantum dot under quantum Hall conditions
Atci, H.; Siddiki, A.
2017-01-01
In this work, a quantum dot that is defined asymmetrically by electrostatic means induced on a GaAs/AlGaAs heterostructure is investigated to unravel the effect of geometric constraints on the formation of spin droplets under quantized Hall conditions. The incompressibility of the excited ν =5/2 state is explored by solving the Schrödinger equation within spin density functional theory, where the confinement potential is obtained self-consistently utilizing the Thomas-Fermi approximation. Our numerical investigations show that the spatial distribution of the ν =2 incompressible strips and electron occupation in the second lowest Landau level considerably differ from the results of the laterally symmetric quantum dots. Our findings yield two important consequences: first, the incompressibility of the intriguing ν =5/2 state is strongly affected by the asymmetry, and second, since the Aharonov-Bohm interference patterns depend on the velocity of the particles, asymmetry yields an additional parameter to adjust the oscillation period, which imposes a boundary condition dependency in observing quasiparticle phases.
Institute of Scientific and Technical Information of China (English)
Xinru Li[1; Ying Dai[1; Yandong Ma[1; Wei Wei[1; Lin Yu[1; Baibiao Huang[2
2015-01-01
A new family of two-dimensional （2D） topological insulators （TIs） comprising g-TIA （A = N, P, As, and Sb） monolayers constructed by T1 and group-V elements is predicted by first-principles calculations and molecular-dynamics （MD） simulations. The geometric stability, band inversion, nontrivial edge states, and electric polarity are investigated to predict the large-gap quantum spin Hall insulator and Rashba-Dresselhaus effects. The MD results reveal that the g-T1A monolayers remain stable even at room temperature. The g-T1A （A = As, Sb） monolayers become TIs under the influence of strong spin-orbit couplings with large bulk bandgaps of 131 and 268 meV, respectively. A single band inversion is observed in each g-T1A （A = As, Sb） monolayer, indicating a nontrivial topological nature. Furthermore, the topological edge states are described by introducing a sufficiently wide zigzag-nanoribbon. A Dirac point in the middle of the bulk gap connects the valence- and conduction-band edges. The Fermi velocity near the Dirac point with a linear band dispersion is -0.51 × 106 m/s, which is comparable to that of many other 2D nanomaterials. More importantly, owing to the broken inversion symmetry normal to the plane of the g-T1A films, a promising Rashba-Dresselhaus effect with the parameter up to 0.85 eV-A is observed in the g-T1A （A = As, Sb） monolayers. Our findings regarding 2D topological g-T1A monolayers with room-temperature bandgaps, intriguing topological edge states, and a promising Rashba-Dresselhaus effect are of fundamental value and suggest potential applications in nanoelectronic devices.
Energy Technology Data Exchange (ETDEWEB)
Kim, Sang-Il; Seo, Min-Su; Park, Seung-Young, E-mail: parksy@kbsi.re.kr [Division of Materials Science, Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of); Kim, Dong-Jun; Park, Byong-Guk [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
2015-05-07
The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE{sub 011} resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage V{sub ISHE} for the stacking order of the bilayer can separate the pure V{sub ISHE} and the anomalous Hall effect (AHE) voltage V{sub AHE} utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θ{sub ISH}, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θ{sub ISH} values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable V{sub ISHE} value in bilayer systems are large θ{sub ISH} and low resistivity.
Dissipationless spin-Hall current contribution in the extrinsic spin-Hall effect
Institute of Scientific and Technical Information of China (English)
Yan Yu-Zhen; Li Hui-Wu; Hu Liang-Bin
2009-01-01
This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect, which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor (or metal). By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate, it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings (or may even be larger than the latter one). The theoretical results obtained are in good agreement with recent relevant experimental results.
Durganandini, P.
2016-03-01
We study theoretically, the electromagnetic response due to localized charge current distributions above a topological insulator (coated with a thin ferromagnetic layer) using the electromagnetic SL(2,Z) duality symmetry. We show that the localized current induces an electric field which depends on the current —this is a manifestation of the topological magnetoelectric (TME) effect. We also show that if the charge carriers have spin, then they acquire Aharanov-Casher phases which depend on the current. As an application, we consider thin planar charged quantum rings with persistent currents on the surface of a TI and show that the TME manifests itself as persistent Hall voltages across the charged ring. If the spin is also taken into account, then persistent spin Hall voltages develop across the ring.
Background Pressure Effects on Krypton Hall Effect Thruster Internal Acceleration
2013-08-01
krypton operation of the BHT -600 at the conditions in Table 2 yields a thrust of 22.4 mN corresponding to an anode efficiency of approximately 31...measurement volume is ap- proximately 500 µm diameter by 1 mm length. Measurement Domain Figure 3 shows a cross-section of the BHT -600 Hall effect...of the BHT -600 Hall effect thruster with measurement volume shown in red. All dimensions are given in mm. tion of the transition
Fractional quantum Hall states at zero magnetic field.
Neupert, Titus; Santos, Luiz; Chamon, Claudio; Mudry, Christopher
2011-06-10
We present a simple prescription to flatten isolated Bloch bands with a nonzero Chern number. We first show that approximate flattening of bands with a nonzero Chern number is possible by tuning ratios of nearest-neighbor and next-nearest-neighbor hoppings in the Haldane model and, similarly, in the chiral-π-flux square lattice model. Then we show that perfect flattening can be attained with further range hoppings that decrease exponentially with distance. Finally, we add interactions to the model and present exact diagonalization results for a small system at 1/3 filling that support (i) the existence of a spectral gap, (ii) that the ground state is a topological state, and (iii) that the Hall conductance is quantized.
Charge metastability and hysteresis in the quantum Hall regime
Pollanen, J.; Eisenstein, J. P.; Pfeiffer, L. N.; West, K. W.
2016-12-01
We report simultaneous quasi-dc magnetotransport and high-frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states, a strong magnetic-field-sweep hysteresis in the velocity of the acoustic waves is observed at low temperatures. This hysteresis indicates the presence of a metastable state with anomalously high conductivity in the interior of the sample. This nonequilibrium state is not revealed by conventional low-frequency transport measurements which are dominated by dissipationless transport at the edge of the two-dimensional system. We find that a field-cooling technique allows the equilibrium charge configuration within the interior of the sample to be established. A simple model for this behavior is discussed.
Piezo Voltage Controlled Planar Hall Effect Devices
Bao Zhang; Kang-Kang Meng; Mei-Yin Yang; Edmonds, K. W.; Hao Zhang; Kai-Ming Cai; Yu Sheng; Nan Zhang; Yang Ji; Jian-Hua Zhao; Hou-Zhi Zheng; Kai-You Wang
2015-01-01
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the pie...
Ye, Jinwu
2005-03-01
We study the interlayer coherent incompressible phase in trilayer quantum Hall systems (TLQH) at total filling factor νT=1 from three approaches: Mutual composite fermion (MCF), composite boson (CB), and wave function approach. Just like in bilayer quantum Hall system, CB approach is superior than MCF approach in studying TLQH with broken symmetry. The Hall and Hall drag resistivities are found to be quantized at h/e2 . Two neutral gapless modes with linear dispersion relations are identified and the ratio of the two velocities is close to 3 . The excitation spectra are classified into two classes, charge neutral bosonic two-body bound states and charge ±1 fermionic three-body bound states. In general, there are two two-body Kosterlize-Thouless (KT) transition temperatures and one three-body KT transition. The charge ±1 three-body fermionic bound states may be the main dissipation source of transport measurements. The broken symmetry in terms of SU (3) algebra is studied. The structure of excitons and their flowing patterns are given. The coupling between the two Goldstone modes will lead to the broadening in the zero-bias peak in the interlayer correlated tunnelings of the TLQH. Several interesting features unique to TLQH are outlined. Limitations of the CB approach are also pointed out.
Transport studies on Cr-doped (Bi,Sb)2Te3 thin films with nearly quantized anomalous Hall effect
Liu, Minhao; Richardella, Anthony; Kandala, Abhinav; Wang, Wudi; Yazdani, Ali; Samarth, Nitin; Ong, N. Phuan
2015-03-01
We describe measurements of the quantum anomalous Hall effect in ferromagnetic Cr-doped (Bi,Sb)2Te3 thin films (6-8 QL thickness) grown on (111) SrTiO3 (STO) substrates by molecular beam epitaxy. The Fermi level is tuned close to the neutral point by tuning the growth flux ratios of Cr, Bi and Sb. Transport measurements were carried out in a dilution fridge at a base temperature of 20 mK. By tuning the chemical potential with a back gate on the STO substrate, we observed an anomalous Hall effect as high as 0.95h/e2, with a coercive field ~ 0.15 T and a narrow transition between positive/negative Hall plateaus. Transport measurements in a non-local configuration showed a Hall-effect-like non-local resistance with a systematic dependence on the back gate voltage and with pronounced peaks which resembled the non-local resistance of the quantum Hall effect. The non-local signal has a maximum that coincides with the maximum in Hall conductivity, indicating the edge channel as its origin. Our results show that the edge channel manifests itself in various transport properties even though the Hall resistance is not perfectly quantized. Supported by DARPA SPAWAR Grant No. N66001-11-1-4110 and MURI grant on Topological Insulators (ARO W911NF-12-1-0461).
Zhang, Junyi; Beugnon, Jérôme; Nascimbene, Sylvain
2016-10-01
We describe a protocol to prepare clusters of ultracold bosonic atoms in strongly interacting states reminiscent of fractional quantum Hall states. Our scheme consists in injecting a controlled amount of angular momentum to an atomic gas using Raman transitions carrying orbital angular momentum. By injecting one unit of angular momentum per atom, one realizes a single-vortex state, which is well described by mean-field theory for large enough particle numbers. We also present schemes to realize fractional quantum Hall states, namely, the bosonic Laughlin and Moore-Read states. We investigate the requirements for adiabatic nucleation of such topological states, in particular comparing linear Landau-Zener ramps and arbitrary ramps obtained from optimized control methods. We also show that this protocol requires excellent control over the isotropic character of the trapping potential.
Can, T.; Chiu, Y. H.; Laskin, M.; Wiegmann, P.
2016-12-01
We study quantum Hall states on surfaces with conical singularities. We show that the electronic fluid at the cone tip possesses an intrinsic angular momentum, which is due solely to the gravitational anomaly. We also show that quantum Hall states behave as conformal primaries near singular points, with a conformal dimension equal to the angular momentum. Finally, we argue that the gravitational anomaly and conformal dimension determine the fine structure of the electronic density at the conical point. The singularities emerge as quasiparticles with spin and exchange statistics arising from adiabatically braiding conical singularities. Thus, the gravitational anomaly, which appears as a finite size correction on smooth surfaces, dominates geometric transport on singular surfaces.
The weakly coupled Pfaffian as a type I quantum hall liquid
Energy Technology Data Exchange (ETDEWEB)
Parameswaran, S.A., E-mail: spivak@u.washington.edu [Department of Physics, Princeton University, Princeton, NJ 08544 (United States); Kivelson, S.A. [Department of Physics, Stanford University, Stanford, CA 94305 (United States); Sondhi, S.L. [Department of Physics, Princeton University, Princeton, NJ 08544 (United States); Spivak, B.Z. [Department of Physics, University of Washington, Seattle, WA 98195 (United States)
2012-06-01
The Pfaffian phase of electrons in the proximity of a half-filled Landau level is understood to be a p+ip superconductor of composite fermions. We consider the properties of this paired quantum Hall phase when the pairing scale is small, i.e. in the weak coupling, BCS, limit, where the coherence length is much larger than the charge screening length. We find that, as in a Type I superconductor, vortices attract so that, upon varying the magnetic field from its magic value at {nu}=5/2, the system exhibits Coulomb frustrated phase separation. We propose that the weakly and strongly coupled Pfaffian states exemplify a general dichotomy between Type I and Type II quantum Hall fluids.
Composed planar Hall effect sensors with dual-mode operation
Vladislav Mor; Debangsu Roy; Moty Schultz; Lior Klein
2016-01-01
We present a composed planar Hall effect sensor with two modes of operation: (a) an ON mode where the composed sensor responds to magnetic field excitations similarly to the response of a regular planar Hall effect sensor, and (b) an OFF mode where the response is negligible. The composed planar Hall effect sensor switches from the OFF mode to the ON mode when it is exposed to a magnetic field which exceeds a certain threshold determined by the sensor design. The features of this sensor make ...
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
Institute of Scientific and Technical Information of China (English)
YU Rui
2011-01-01
The Hall effect, the anomalous Hall effect （AHE） and the spin Hall effect are thndamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The AHE, in which a voltage transverse to the electric current appears even in the absence of an external magnetic field, was first detected in ferromagnetic （FM） metals in 1881 and later found to arise from the spin-orbit coupling （SOC） between the current and magnetic moments.
Experimental Observation of the Inverse Spin Hall Effect at Room Temperature
Energy Technology Data Exchange (ETDEWEB)
Liu, Baoli; Shi, Junren; Wang, Wenxin; Zhao, Hongming; Li, Dafang; /Beijing, Inst. Phys.; Zhang, Shoucheng; /Stanford U., Phys. Dept.; Xue, Qikun; Chen, Dongmin; /Beijing, Inst. Phys.
2010-03-16
We observe the inverse spin Hall effect in a two-dimensional electron gas confined in Al-GaAs/InGaAs quantum wells. Specifically, they find that an inhomogeneous spin density induced by the optical injection gives rise to an electric current transverse to both the spin polarization and its gradient. The spin Hall conductivity can be inferred from such a measurement through the Einstein relation and the onsager relation, and is found to have the order of magnitude of 0.5(e{sup 2}/h). The observation is made at the room temperature and in samples with macroscopic sizes, suggesting that the inverse spin Hall effects is a robust macroscopic transport phenomenon.
Quantum spin Hall states in graphene interacting with WS2 or WSe2
Kaloni, T. P.
2014-12-08
In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS2 and WSe2 monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenide results in quantum spin Hall states in the absence of a magnetic field.
Electronic entanglement via quantum Hall interferometry in analogy to an optical method
Frustaglia, Diego; Cabello, Adán
2009-11-01
We present an interferometric scheme producing orbital entanglement in a quantum Hall system upon electron-hole pair emission via tunneling. The proposed setup is an electronic version of the optical interferometer proposed by Cabello [Phys. Rev. Lett. 102, 040401 (2009)] and is feasible with the present technology. It requires single-channel propagation and a single primary source. We discuss the creation of entanglement and its detection by the violation of a Bell inequality.
DC resistance comparison between a current comparator bridge and the quantum Hall system at Inmetro
da Silva, M. C.; Carvalho, H. R.; Vasconcellos, R. T. B.
2016-07-01
This paper presents a comparison results between the Quantum Hall System (QHS) under development at the Quantum Electrical Metrology Laboratory (Lameq) and the current comparator calibration system, traceable to the Bureau International des Poids et Mesures (BIPM), at the Electrical Standardization Metrology Laboratory (Lampe), both part of the Electrical Metrology Division, at Inmetro. Comparisons were performed with 1 Ω, 10 Ω, 100 Ω, 1 kΩ and 10 kΩ resistors. The results obtained over two years of work are presented here, showing that the comparison contributed to improve the calibration systems of both Lampe and Lameq.
Long-distance entanglement of spin qubits via quantum Hall edge states
Yang, Guang; Hsu, Chen-Hsuan; Stano, Peter; Klinovaja, Jelena; Loss, Daniel
2016-02-01
The implementation of a functional quantum computer involves entangling and coherent manipulation of a large number of qubits. For qubits based on electron spins confined in quantum dots, which are among the most investigated solid-state qubits at present, architectural challenges are often encountered in the design of quantum circuits attempting to assemble the qubits within the very limited space available. Here, we provide a solution to such challenges based on an approach to realizing entanglement of spin qubits over long distances. We show that long-range Ruderman-Kittel-Kasuya-Yosida interaction of confined electron spins can be established by quantum Hall edge states, leading to an exchange coupling of spin qubits. The coupling is anisotropic and can be either Ising type or XY type, depending on the spin polarization of the edge state. Such a property, combined with the dependence of the electron spin susceptibility on the chirality of the edge state, can be utilized to gain valuable insights into the topological nature of various quantum Hall states.
Giant Anomalous Hall Effect in the Chiral Antiferromagnet Mn3Ge
Kiyohara, Naoki; Tomita, Takahiro; Nakatsuji, Satoru
2016-06-01
The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for ferromagnets, but it has never been observed in antiferromagnets until the recent discovery in Mn3Sn . Here we report another example of the AHE in a related antiferromagnet, namely, in the hexagonal chiral antiferromagnet Mn3Ge . Our single-crystal study reveals that Mn3Ge exhibits a giant anomalous Hall conductivity |σx z|˜60 Ω-1 cm-1 at room temperature and approximately 380 Ω-1 cm-1 at 5 K in zero field, reaching nearly half of the value expected for the quantum Hall effect per atomic layer with Chern number of unity. Our detailed analyses on the anisotropic Hall conductivity indicate that in comparison with the in-plane-field components |σx z| and |σz y|, which are very large and nearly comparable in size, we find |σy x| obtained in the field along the c axis to be much smaller. The anomalous Hall effect shows a sign reversal with the rotation of a small magnetic field less than 0.1 T. The soft response of the AHE to magnetic field should be useful for applications, for example, to develop switching and memory devices based on antiferromagnets.
"Hall viscosity" and intrinsic metric of incompressible fractional Hall fluids
Haldane, F. D. M.
2009-01-01
The (guiding-center) "Hall viscosity" is a fundamental tensor property of incompressible ``Hall fluids'' exhibiting the fractional quantum Hall effect; it determines the stress induced by a non-uniform electric field, and the intrinsic dipole moment on (unreconstructed) edges. It is characterized by a rational number and an intrinsic metric tensor that defines distances on an ``incompressibility lengthscale''. These properties do not require rotational invariance in the 2D plane. The sign of ...
Hall effect in CNT doped YBCO high temperature superconductor
Directory of Open Access Journals (Sweden)
S Dadras
2010-09-01
Full Text Available In order to study Hall effect in pure and CNT doped YBCO polycrystalline samples, we have measured longitudinal and transverse voltages at the different magnetic field (0-9T in the vortex state. We found a sign reversal for pure sample near 3T and double sign reversal of the Hall coefficient for CNT doped sample near 3 and 5T. It can be deduced that CNT doping caused strong flux pinning and Hall double sign reversal in this compound.
Phonon Hall Effect in Four-Terminal Junctions
Zhang, Lifa; Wang, Jian-Sheng; Li, Baowen
2009-01-01
Using an exact nonequilibrium Green's function formulism, the phonon Hall effect for paramagnetic dielectrics is studied in a four-terminal device setting. The temperature difference in the transverse direction of the heat current is calculated for two-dimensional models with the magnetic field perpendicular to the plane. We find a surprising result that the square lattice does not have the phonon Hall effect while a honeycomb lattice has. This can be explained by symmetry. The temperature di...
Bosonic analogs of the fractional quantum Hall state in the vicinity of Mott states
Kuno, Yoshihito; Shimizu, Keita; Ichinose, Ikuo
2017-01-01
In this paper, the Bose-Hubbard model (BHM) with the nearest-neighbor (NN) repulsions is studied from the viewpoint of possible bosonic analogs of the fractional quantum Hall (FQH) state in the vicinity of the Mott insulator (MI). First, by means of the Gutzwiller approximation, we obtain the phase diagram of the BHM in a magnetic field. Then, we introduce an effective Hamiltonian describing excess particles on a MI and calculate the vortex density, momentum distribution, and the energy gap. These calculations indicate that the vortex solid forms for small NN repulsions, but a homogeneous featureless "Bose metal" takes the place of it as the NN repulsion increases. We consider particular filling factors at which the bosonic FQH state is expected to form. Chern-Simons (CS) gauge theory to the excess particle is introduced, and a modified Gutzwiller wave function, which describes bosons with attached flux quanta, is introduced. The energy of the excess particles in the bosonic FQH state is calculated using that wave function, and it is compared with the energy of the vortex solid and Bose metal. We found that the energy of the bosonic FQH state is lower than that of the Bose metal and comparable with the vortex solid. Finally, we clarify the condition that the composite fermion appears by using CS theory on the lattice that we previously proposed for studying the electron FQH effect.
Baidya, Santu; Waghmare, Umesh V.; Paramekanti, Arun; Saha-Dasgupta, Tanusri
2016-10-01
Towards the goal of realizing topological phases in thin films of correlated oxide and heterostructures, we propose here a quantum anomalous Hall insulator (QAHI) in ultrathin films of double perovskites based on mixed 3 d -5 d or 3 d -4 d transition-metal ions, grown along the [111] direction. Considering the specific case of ultrathin Ba2FeReO6 , we present a theoretical analysis of an effective Hamiltonian derived from first principles. We establish that a strong spin-orbit coupling at the Re site, t2 g symmetry of the low-energy d bands, polarity of its [111] orientation of perovskite structure, and mixed 3 d -5 d chemistry results in room temperature magnetism with a robust QAHI state of Chern number C =1 and a large band gap. We uncover and highlight a nonrelativistic orbital Rashba-type effect in addition to the spin-orbit coupling, that governs this QAHI state. With a band gap of ˜100 meV in electronic structure and magnetic transition temperature Tc˜300 K estimated by Monte Carlo simulations, our finding of the QAHI state in ultrathin Ba2FeReO6 is expected to stimulate experimental verification along with possible practical applications of its dissipationless edge currents.
Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires.
Haas, Fabian; Zellekens, Patrick; Lepsa, Mihail; Rieger, Torsten; Grützmacher, Detlev; Lüth, Hans; Schäpers, Thomas
2017-01-11
We present low-temperature magnetotransport measurements on GaAs/InAs core/shell nanowires contacted by regular source-drain leads as well as laterally attached Hall contacts, which only touch parts of the nanowire sidewalls. Low-temperature measurements between source and drain contacts show typical phase coherent effects, such as universal conductance fluctuations in a magnetic field aligned perpendicularly to the nanowire axis as well as Aharonov-Bohm-type oscillations in a parallel aligned magnetic field. However, the signal between the Hall contacts shows a Hall voltage buildup, when the magnetic field is turned perpendicular to the nanowire axis while current is driven through the wire using the source-drain contacts. At low temperatures, the phase coherent effects measured between source and drain leads are superimposed on the Hall voltage, which can be explained by nonlocal probing of large segments of the nanowire. In addition, the Aharonov-Bohm-type oscillations are also observed in the magnetoconductance at magnetic fields aligned parallel to the nanowire axis, using the laterally contacted leads. This measurement geometry hereby directly corresponds to classical Aharonov-Bohm experiments using planar quantum rings. In addition, the Hall voltage is used to characterize the nanowires in terms of charge carrier concentration and mobility, using temperature- and gate-dependent measurements as well as measurements in tilted magnetic fields. The GaAs/InAs core/shell nanowire used in combination with laterally attached contacts is therefore the ideal system to three-dimensionally combine quantum ring experiments using the cross-sectional plane and Hall experiments using the axial nanowire plane.
Valleytronics. The valley Hall effect in MoS₂ transistors.
Mak, K F; McGill, K L; Park, J; McEuen, P L
2014-06-27
Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.
Hall Effect Thruster Ground Testing Challenges
2009-08-18
conditional stability of the inverted pendulum thrust stand provides improved measurement sensitivity.5 With the displacement of the inverted pendulum...July 2005. 12Samiento, C., “RHETT2/ EPDM Hall Thruster Propulsion System Electromagnetic Compatability Evaluation,” Proceed- ings of the 25th
Physics Nobel Prize Goes to Tsui, Stormer and Laughlin for the Fractional Quantum Hall Effect
Energy Technology Data Exchange (ETDEWEB)
Schwarzschild, Bertram
1998-12-15
This year's Nobel Prize in Physics is shared by Robert Laughlin (Stanford), Horst Stormer (Columbia University and Bell Laboratories) and Daniel Tsui (Princeton), for their roles in the discovery and explanation of the fractional quantum Hall effect. In 1982, when Stormer and Tsui were experimenters at Bell Labs, they and their colleague Arthur Gossard discovered this totally unexpected quantum effect in the transport properties of two‐dimensional electron gases at low temperature in strong magnetic fields.’ (See PHYSICS TODAY, July 1983, page 19.)
Azimuthal Spoke Propagation in Hall Effect Thrusters
Sekerak, Michael J.; Longmier, Benjamin W.; Gallimore, Alec D.; Brown, Daniel L.; Hofer, Richard R.; Polk, James E.
2013-01-01
Spokes are azimuthally propagating perturbations in the plasma discharge of Hall Effect Thrusters (HETs) that travel in the E x B direction and have been observed in many different systems. The propagation of azimuthal spokes are investigated in a 6 kW HET known as the H6 using ultra-fast imaging and azimuthally spaced probes. A spoke surface is a 2-D plot of azimuthal light intensity evolution over time calculated from 87,500 frames/s videos. The spoke velocity has been determined using three methods with similar results: manual fitting of diagonal lines on the spoke surface, linear cross-correlation between azimuthal locations and an approximated dispersion relation. The spoke velocity for three discharge voltages (300, 400 and 450 V) and three anode mass flow rates (14.7, 19.5 and 25.2 mg/s) yielded spoke velocities between 1500 and 2200 m/s across a range of normalized magnetic field settings. The spoke velocity was inversely dependent on magnetic field strength for low B-field settings and asymptoted at B-field higher values. The velocities and frequencies are compared to standard drifts and plasma waves such as E x B drift, electrostatic ion cyclotron, magnetosonic and various drift waves. The empirically approximated dispersion relation yielded a characteristic velocity that matched the ion acoustic speed for 5 eV electrons that exist in the near-anode and near-field plume regions of the discharge channel based on internal measurements. Thruster performance has been linked to operating mode where thrust-to-power is maximized when azimuthal spokes are present so investigating the underlying mechanism of spokes will benefit thruster operation.
Mode Transitions in Hall Effect Thrusters
Sekerak, Michael J.; Longmier, Benjamin W.; Gallimore, Alec D.; Brown, Daniel L.; Hofer, Richard R.; Polk, James E.
2013-01-01
Mode transitions have been commonly observed in Hall Effect Thruster (HET) operation where a small change in a thruster operating parameter such as discharge voltage, magnetic field or mass flow rate causes the thruster discharge current mean value and oscillation amplitude to increase significantly. Mode transitions in a 6-kW-class HET called the H6 are induced by varying the magnetic field intensity while holding all other operating parameters constant and measurements are acquired with ion saturation probes and ultra-fast imaging. Global and local oscillation modes are identified. In the global mode, the entire discharge channel oscillates in unison and azimuthal perturbations (spokes) are either absent or negligible. Downstream azimuthally spaced probes show no signal delay between each other and are very well correlated to the discharge current signal. In the local mode, signals from the azimuthally spaced probes exhibit a clear delay indicating the passage of "spokes" and are not well correlated to the discharge current. These spokes are localized oscillations propagating in the ExB direction that are typically 10-20% of the mean value. In contrast, the oscillations in the global mode can be 100% of the mean value. The transition between global and local modes occurs at higher relative magnetic field strengths for higher mass flow rates or higher discharge voltages. The thrust is constant through mode transition but the thrust-to-power decreased by 25% due to increasing discharge current. The plume shows significant differences between modes with the global mode significantly brighter in the channel and the near-field plasma plume as well as exhibiting a luminous spike on thruster centerline. Mode transitions provide valuable insight to thruster operation and suggest improved methods for thruster performance characterization.
Composite Fermion Theory for the Fractional Quantum Hall Wigner Crystal State
Narevich, Romanas; Murthy, Ganpathy; Fertig, Herbert
2000-03-01
The low filling fraction Quantum Hall Effect is reexamined using the recent hamiltonian composite fermion theory developed by Shankar and Murthy [SM] (R. Shankar and G. Murthy, Phys. Rev. Lett. 79), 4437, (1997); G. Murthy and R. Shankar, Chapter 4 of "Composite Fermions", O. Heinonen, Ed. (World Scientific, Teaneck, NJ, 1998).. Previous studies have either concentrated on Wigner crystal states of electrons in the Hartree-Fock approximation (D. Yoshioka and H. Fukuyama, J. Phys. Soc. Japan 47), 394 (1979); D. Yoshioka and P. A. Lee, Phys. Rev. B 27, 4986 (1983); A. H. MacDonald, Phys. Rev. B 30, 4392 (1984); R. Cote and A. H. MacDonald, Phys. Rev. B 44, 8759 (1991). or studied correlated crystal states numerically (P. K. Lam and S. M. Girvin, Phys. Rev. B 30), 473 (1984); H. Yi and H. A. Fertig, Phys. Rev. B, 58, 4019 (1998).. Using the new SM approach we study the correlated states as Hartree-Fock states of composite fermions, which is known to work reasonably well for translationally invariant composite fermion states. We present the calculation of the gaps for the stable states that we found as well as the dispersion relations of the collective modes.
Microscopic study of the (2)/(5) fractional quantum Hall edge
Sreejith, G. J.; Jolad, Shivakumar; Sen, Diptiman; Jain, Jainendra K.
2011-12-01
This paper reports on our study of the edge of the (2)/(5) fractional quantum Hall state, which is more complicated than the edge of the (1)/(3) state because of the presence of edge sectors corresponding to different partitions of composite fermions in the lowest two Λ levels. The addition of an electron at the edge is a nonperturbative process and it is not a priori obvious in what manner the added electron distributes itself over these sectors. We show, from a microscopic calculation, that when an electron is added at the edge of the ground state in the [N1,N2] sector, where N1 and N2 are the numbers of composite fermions in the lowest two Λ levels, the resulting state lies in either [N1+1,N2] or [N1,N2+1] sectors; adding an electron at the edge is thus equivalent to adding a composite fermion at the edge. The coupling to other sectors of the form [N1+1+k,N2-k], k integer, is negligible in the asymptotically low-energy limit. This study also allows a detailed comparison with the two-boson model of the (2)/(5) edge. We compute the spectral weights and find that while the individual spectral weights are complicated and nonuniversal, their sum is consistent with an effective two-boson description of the (2)/(5) edge.