Transport in quantum dots

International Nuclear Information System (INIS)

Deus, Fernanda; Continetino, Mucio

2011-01-01

Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

International Nuclear Information System (INIS)

Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

2010-01-01

To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

Science.gov (United States)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

International Nuclear Information System (INIS)

Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

2008-01-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

Metamorphic quantum dots: Quite different nanostructures

International Nuclear Information System (INIS)

Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

2010-01-01

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Templated self-assembly of SiGe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Dais, Christian

2009-08-19

This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

Coupled quantum dot-ring structures by droplet epitaxy

International Nuclear Information System (INIS)

Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S

2011-01-01

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

Science.gov (United States)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2017-12-01

Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG-QDCFET)

Science.gov (United States)

Karmakar, Supriya

2014-10-01

This paper presents the implementation of quaternary logic circuits based on quantum dot gate-quantum dot channel field effect transistor (QDG-QDCFET). The super lattice structure in the quantum dot channel region of QDG-QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG-QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG-QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG-QDCFET.

Colloidal quantum dot solar cells exploiting hierarchical structuring

KAUST Repository

Labelle, André J.

2015-02-11

Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells that feature transfer-stamped solution-processed pyramid-shaped electrodes employed in a hierarchically structured device. The pyramids increase, by up to a factor of 2, the external quantum efficiency of the device at absorption-limited wavelengths near the absorber band edge. We show that absorption enhancement can be optimized with increased pyramid angle with an appreciable net improvement in power conversion efficiency, that is, with the gain in current associated with improved absorption and extraction overcoming the smaller fractional decrease in open-circuit voltage associated with increased junction area. We show that the hierarchical combination of micron-scale structured electrodes with nanoscale films provides for an optimized enhancement at absorption-limited wavelengths. We fabricate 54.7° pyramid-patterned electrodes, conformally apply the quantum dot films, and report pyramid CQD solar cells that exhibit a 24% improvement in overall short-circuit current density with champion devices providing a power conversion efficiency of 9.2%.

Probing the structural dependency of photoinduced properties of colloidal quantum dots using metal-oxide photo-active substrates

International Nuclear Information System (INIS)

Patty, Kira; Campbell, Quinn; Hamilton, Nathan; West, Robert G.; Sadeghi, Seyed M.; Mao, Chuanbin

2014-01-01

We used photoactive substrates consisting of about 1 nm coating of a metal oxide on glass substrates to investigate the impact of the structures of colloidal quantum dots on their photophysical and photochemical properties. We showed during irradiation these substrates can interact uniquely with such quantum dots, inducing distinct forms of photo-induced processes when they have different cores, shells, or ligands. In particular, our results showed that for certain types of core-shell quantum dot structures an ultrathin layer of a metal oxide can reduce suppression of quantum efficiency of the quantum dots happening when they undergo extensive photo-oxidation. This suggests the possibility of shrinking the sizes of quantum dots without significant enhancement of their non-radiative decay rates. We show that such quantum dots are not influenced significantly by Coulomb blockade or photoionization, while those without a shell can undergo a large amount of photo-induced fluorescence enhancement via such blockade when they are in touch with the metal oxide.

Structural Investigations of GaAs/AIAs quantum wires and quantum dots

NARCIS (Netherlands)

Darhuber, A.A.; Bauer, G.; Wang, P.D.; Song, Y.P.; Sotomayor Torres, C.M.; Holland, M.C.

1995-01-01

We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle

Spin interactions in InAs quantum dots

Science.gov (United States)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Electron correlations in quantum dots

International Nuclear Information System (INIS)

Tipton, Denver Leonard John

2001-01-01

Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

Science.gov (United States)

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-21

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

Quantum dot devices for optical communications

DEFF Research Database (Denmark)

Mørk, Jesper

2005-01-01

-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...

Quantum Dots and Their Multimodal Applications: A Review

Directory of Open Access Journals (Sweden)

Paul H. Holloway

2010-03-01

Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

Science.gov (United States)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Optical Properties of Semiconductor Quantum Dots

NARCIS (Netherlands)

Perinetti, U.

2011-01-01

This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

Chemical nature and structure of organic coating of quantum dots is crucial for their application in imaging diagnostics

Science.gov (United States)

Bakalova, Rumiana; Zhelev, Zhivko; Kokuryo, Daisuke; Spasov, Lubomir; Aoki, Ichio; Saga, Tsuneo

2011-01-01

Background: One of the most attractive properties of quantum dots is their potential to extend the opportunities for fluorescent and multimodal imaging in vivo. The aim of the present study was to clarify whether the composition and structure of organic coating of nanoparticles are crucial for their application in vivo. Methods: We compared quantum dots coated with non-crosslinked amino-functionalized polyamidoamine (PAMAM) dendrimers, quantum dots encapsulated in crosslinked carboxyl-functionalized PAMAM dendrimers, and silica-shelled amino-functionalized quantum dots. A multimodal fluorescent and paramagnetic quantum dot probe was also developed and analyzed. The probes were applied intravenously in anesthetized animals for visualization of brain vasculature using two-photon excited fluorescent microscopy and visualization of tumors using fluorescent IVIS® imaging (Caliper Life Sciences, Hopkinton, MA) and magnetic resonance imaging. Results: Quantum dots coated with non-crosslinked dendrimers were cytotoxic. They induced side effects in vivo, including vasodilatation with a decrease in mean arterial blood pressure and heart rate. The quantum dots penetrated the vessels, which caused the quality of fluorescent imaging to deteriorate. Quantum dots encapsulated in crosslinked dendrimers had low cytotoxicity and were biocompatible. In concentrations quantum dots/kg bodyweight, these nanoparticles did not affect blood pressure and heart rate, and did not induce vasodilatation or vasoconstriction. PEGylation (PEG [polyethylene glycol]) was an indispensable step in development of a quantum dot probe for in vivo imaging, based on silica-shelled quantum dots. The non-PEGylated silica-shelled quantum dots possessed low colloidal stability in high-salt physiological fluids, accompanied by rapid aggregation in vivo. The conjugation of silica-shelled quantum dots with PEG1100 increased their stability and half-life in the circulation without significant enhancement of their

Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

Science.gov (United States)

Holtkemper, M.; Reiter, D. E.; Kuhn, T.

2018-02-01

Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

Nanocrystal quantum dots

CERN Document Server

Klimov, Victor I

2010-01-01

""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

Integrated photonics using colloidal quantum dots

Science.gov (United States)

Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

2009-11-01

Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

Structural characterization of CdSe/ZnS quantum dots using medium energy ion scattering

Science.gov (United States)

Sortica, M. A.; Grande, P. L.; Radtke, C.; Almeida, L. G.; Debastiani, R.; Dias, J. F.; Hentz, A.

2012-07-01

In the present work, we have analyzed CdSe/ZnS core-shell quantum dots by medium energy ion scattering (MEIS), which is a powerful technique to explore the synthesis, formation, stability, and elemental distribution of such core-shell structures, along with other auxiliary analytical techniques. By comparing different quantum-dot structural models spectra with the experimental MEIS data, we were able to obtain some sample structural information. We found that, despite the well known non stoichiometric Cd:Se ratio, the core is stoichiometric, and there is an excess of cadmium distributed in the shell.

Circularly organized quantum dot nanostructures of Ge on Si substrates

International Nuclear Information System (INIS)

Cai, Qijia; Chen, Peixuan; Zhong, Zhenyang; Jiang, Zuimin; Lu, Fang; An, Zhenghua

2009-01-01

A novel circularly arranged structure of germanium quantum dots has been fabricated by combining techniques including electron beam lithography, wet etching and molecular beam epitaxy. It was observed that both pattern and growth parameters affect the morphology of the quantum dot molecules. Meanwhile, the oxidation mask plays a vital role in the formation of circularly organized quantum dots. The experimental results demonstrate the possibilities of investigating the properties of quantum dot molecules as well as single quantum dots

Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

International Nuclear Information System (INIS)

Mlinar, V.; Zunger, A.

2009-01-01

Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

NARCIS (Netherlands)

Ganguli, N.; Acharya, S.; Dasgupta, I.

2014-01-01

We have studied the electronic structure of CdS/ZnSe coupled quantum dots, a novel heterostructure at the nanoscale. Our calculations reveal CdS/ZnSe coupled quantum dots are type II in nature where the anion p states play an important role in deciding the band offset for the highest occupied

Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

International Nuclear Information System (INIS)

Birman, Joseph L.; Huong, Nguyen Que

2007-01-01

The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

PREFACE: Quantum Dot 2010

Science.gov (United States)

Taylor, Robert A.

2010-09-01

These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

Quantum dot spectroscopy

DEFF Research Database (Denmark)

Leosson, Kristjan

1999-01-01

Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

Quantum dot spectroscopy

DEFF Research Database (Denmark)

Leosson, Kristjan

Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

International Nuclear Information System (INIS)

Taboada, A. G.; Alonso-Alvarez, D.; Alen, B.; Rivera, A.; Ripalda, J. M.; Llorens, J. M.; Martin-Sanchez, J.; Gonzalez, Y.; Sanchez, A. M.; Beltran, A. M.; Molina, S. I.; Bozkurt, M.; Ulloa, J. M.; Koenraad, P. M.; Garcia, J. M.

2010-01-01

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

International Nuclear Information System (INIS)

See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

2015-01-01

Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

Charge-extraction strategies for colloidal quantum dot photovoltaics

KAUST Repository

Lan, Xinzheng

2014-02-20

The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

The quantum Hall effect in quantum dot systems

International Nuclear Information System (INIS)

Beltukov, Y M; Greshnov, A A

2014-01-01

It is proposed to use quantum dots in order to increase the temperatures suitable for observation of the integer quantum Hall effect. A simple estimation using Fock-Darwin spectrum of a quantum dot shows that good part of carriers localized in quantum dots generate the intervals of plateaus robust against elevated temperatures. Numerical calculations employing local trigonometric basis and highly efficient kernel polynomial method adopted for computing the Hall conductivity reveal that quantum dots may enhance peak temperature for the effect by an order of magnitude, possibly above 77 K. Requirements to potentials, quality and arrangement of the quantum dots essential for practical realization of such enhancement are indicated. Comparison of our theoretical results with the quantum Hall measurements in InAs quantum dot systems from two experimental groups is also given

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2013-01-01

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

Temperature-dependent fine structure splitting in InGaN quantum dots

Science.gov (United States)

Wang, Tong; Puchtler, Tim J.; Zhu, Tongtong; Jarman, John C.; Kocher, Claudius C.; Oliver, Rachel A.; Taylor, Robert A.

2017-07-01

We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources.

Coal as an abundant source of graphene quantum dots

Science.gov (United States)

Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P.; Samuel, Errol L. G.; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O.; Martí, Angel A.; Tour, James M.

2013-12-01

Coal is the most abundant and readily combustible energy resource being used worldwide. However, its structural characteristic creates a perception that coal is only useful for producing energy via burning. Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes for producing quantum dots. The crystalline carbon within the coal structure is easier to oxidatively displace than when pure sp2-carbon structures are used, resulting in nanometre-sized graphene quantum dots with amorphous carbon addends on the edges. The synthesized graphene quantum dots, produced in up to 20% isolated yield from coal, are soluble and fluorescent in aqueous solution, providing promise for applications in areas such as bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additives for structural composites.

Quantum dots for quantum information technologies

CERN Document Server

2017-01-01

This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

Spin Switching via Quantum Dot Spin Valves

Science.gov (United States)

Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

2018-01-01

We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

SELF-ORGANIZATION OF LEAD SULFIDE QUANTUM DOTS INTO SUPERSTRUCTURES

Directory of Open Access Journals (Sweden)

Elena V. Ushakova

2014-11-01

Full Text Available The method of X-ray structural analysis (X-ray scattering at small angles is used to show that the structures obtained by self-organization on a substrate of lead sulfide (PbS quantum dots are ordered arrays. Self-organization of quantum dots occurs at slow evaporation of solvent from a cuvette. The cuvette is a thin layer of mica with teflon ring on it. The positions of peaks in SAXS pattern are used to calculate crystal lattice of obtained ordered structures. Such structures have a primitive orthorhombic crystal lattice. Calculated lattice parameters are: a = 21,1 (nm; b = 36,2 (nm; c = 62,5 (nm. Dimensions of structures are tens of micrometers. The spectral properties of PbS QDs superstructures and kinetic parameters of their luminescence are investigated. Absorption band of superstructures is broadened as compared to the absorption band of the quantum dots in solution; the luminescence band is slightly shifted to the red region of the spectrum, while its bandwidth is not changed much. Luminescence lifetime of obtained structures has been significantly decreased in comparison with the isolated quantum dots in solution, but remained the same for the lead sulfide quantum dots close-packed ensembles. Such superstructures can be used to produce solar cells with improved characteristics.

Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets

International Nuclear Information System (INIS)

Yang, Weidong; Lee, Hao; Johnson, Thomas J.; Sercel, Peter C.; Norman, A. G.

2000-01-01

Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {136} planes. This structure, which possesses C 2v symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {136} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band k(vector sign)·p(vector sign) electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {136} shape are also considered. Calculations based on the {136} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots. (c) 2000 The American Physical Society

Antiresonance and decoupling in electronic transport through parallel-coupled quantum-dot structures with laterally-coupled Majorana zero modes

Science.gov (United States)

Zhang, Ya-Jing; Zhang, Lian-Lian; Jiang, Cui; Gong, Wei-Jiang

2018-02-01

We theoretically investigate the electronic transport through a parallel-coupled multi-quantum-dot system, in which the terminal dots of a one-dimensional quantum-dot chain are embodied in the two arms of an Aharonov-Bohm interferometer. It is found that in the structures of odd(even) dots, all their even(odd) molecular states have opportunities to decouple from the leads, and in this process antiresonance occurs which are accordant with the odd(even)-numbered eigenenergies of the sub-molecule without terminal dots. Next when Majorana zero modes are introduced to couple laterally to the terminal dots, the antiresonance and decoupling phenomena still co-exist in the quantum transport process. Such a result can be helpful in understanding the special influence of Majorana zero mode on the electronic transport through quantum-dot systems.

Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

International Nuclear Information System (INIS)

Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

2014-01-01

A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped

Organic molecules as tools to control the growth, surface structure, and redox activity of colloidal quantum dots.

Science.gov (United States)

Weiss, Emily A

2013-11-19

In order to achieve efficient and reliable technology that can harness solar energy, the behavior of electrons and energy at interfaces between different types or phases of materials must be understood. Conversion of light to chemical or electrical potential in condensed phase systems requires gradients in free energy that allow the movement of energy or charge carriers and facilitate redox reactions and dissociation of photoexcited states (excitons) into free charge carriers. Such free energy gradients are present at interfaces between solid and liquid phases or between inorganic and organic materials. Nanostructured materials have a higher density of these interfaces than bulk materials. Nanostructured materials, however, have a structural and chemical complexity that does not exist in bulk materials, which presents a difficult challenge: to lower or eliminate energy barriers to electron and energy flux that inevitably result from forcing different materials to meet in a spatial region of atomic dimensions. Chemical functionalization of nanostructured materials is perhaps the most versatile and powerful strategy for controlling the potential energy landscape of their interfaces and for minimizing losses in energy conversion efficiency due to interfacial structural and electronic defects. Colloidal quantum dots are semiconductor nanocrystals synthesized with wet-chemical methods and coated in organic molecules. Chemists can use these model systems to study the effects of chemical functionalization of nanoscale organic/inorganic interfaces on the optical and electronic properties of a nanostructured material, and the behavior of electrons and energy at interfaces. The optical and electronic properties of colloidal quantum dots have an intense sensitivity to their surface chemistry, and their organic adlayers make them dispersible in solvent. This allows researchers to use high signal-to-noise solution-phase spectroscopy to study processes at interfaces. In this

Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

LI Zhi-min

2017-08-01

Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

International Nuclear Information System (INIS)

Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

2017-01-01

Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

Scalable quantum computer architecture with coupled donor-quantum dot qubits

Science.gov (United States)

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

The electronic properties of semiconductor quantum dots

International Nuclear Information System (INIS)

Barker, J.A.

2000-10-01

This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

Spin interactions in InAs quantum dots and molecules

Energy Technology Data Exchange (ETDEWEB)

Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

2006-12-15

Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable single quantum dot nanocavities for cavity QED experiments

International Nuclear Information System (INIS)

Kaniber, M; Laucht, A; Neumann, A; Bichler, M; Amann, M-C; Finley, J J

2008-01-01

We present cavity quantum electrodynamics experiments performed on single quantum dots embedded in two-dimensional photonic crystal nanocavities. We begin by describing the structural and optical properties of the quantum dot sample and the photonic crystal nanocavities and compare the experimental results with three-dimensional calculations of the photonic properties. The influence of the tailored photonic environment on the quantum dot spontaneous emission dynamics is studied using spectrally and spatially dependent time-resolved spectroscopy. In ensemble and single dot measurements we show that the photonic crystals strongly enhance the photon extraction efficiency and, therefore, are a promising concept for realizing efficient single-photon sources. Furthermore, we demonstrate single-photon emission from an individual quantum dot that is spectrally detuned from the cavity mode. The need for controlling the spectral dot-cavity detuning is discussed on the basis of shifting either the quantum dot emission via temperature tuning or the cavity mode emission via a thin film deposition technique. Finally, we discuss the recently discovered non-resonant coupling mechanism between quantum dot emission and cavity mode for large detunings which drastically lowers the purity of single-photon emission from dots that are spectrally coupled to nanocavity modes.

Onion like growth and inverted many-particle energies in quantum dots

International Nuclear Information System (INIS)

Bimberg, D.

2008-01-01

Use of surfactants like antimony in MOCVD growth enables novel growth regimes for quantum dots (QDs). The quantum dot ensemble luminescence no longer appears as a single inhomogeneously broadened peak but shows a multi-modal structure. Quantum dot subensembles are forming which differ in height by exactly one monolayer. For the first time the systematic dependence of excitonic properties on quantum dot size and shape can be investigated in detail. Both biexcitonic binding energy and excitonic fine-structure splitting vary from large positive through zero to negative values. Correlation and piezoelectric effects explain the observations

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Ordered quantum-ring chains grown on a quantum-dot superlattice template

International Nuclear Information System (INIS)

Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

2012-01-01

One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

Solid-state cavity quantum electrodynamics using quantum dots

International Nuclear Information System (INIS)

Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

2001-01-01

We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

Stark effect and polarizability of graphene quantum dots

DEFF Research Database (Denmark)

Pedersen, Thomas Garm

2017-01-01

The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

Science.gov (United States)

Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

2017-07-28

Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

Directory of Open Access Journals (Sweden)

Lin Wen

2017-07-01

Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Synthesis of quantum dots

Science.gov (United States)

McDaniel, Hunter

2017-10-17

Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

Intracellular distribution of nontargeted quantum dots after natural uptake and microinjection

Science.gov (United States)

Damalakiene, Leona; Karabanovas, Vitalijus; Bagdonas, Saulius; Valius, Mindaugas; Rotomskis, Ricardas

2013-01-01

Background: The purpose of this study was to elucidate the mechanism of natural uptake of nonfunctionalized quantum dots in comparison with microinjected quantum dots by focusing on their time-dependent accumulation and intracellular localization in different cell lines. Methods: The accumulation dynamics of nontargeted CdSe/ZnS carboxyl-coated quantum dots (emission peak 625 nm) was analyzed in NIH3T3, MCF-7, and HepG2 cells by applying the methods of confocal and steady-state fluorescence spectroscopy. Intracellular colocalization of the quantum dots was investigated by staining with Lysotracker®. Results: The uptake of quantum dots into cells was dramatically reduced at a low temperature (4°C), indicating that the process is energy-dependent. The uptake kinetics and imaging of intracellular localization of quantum dots revealed three accumulation stages of carboxyl-coated quantum dots at 37°C, ie, a plateau stage, growth stage, and a saturation stage, which comprised four morphological phases: adherence to the cell membrane; formation of granulated clusters spread throughout the cytoplasm; localization of granulated clusters in the perinuclear region; and formation of multivesicular body-like structures and their redistribution in the cytoplasm. Diverse quantum dots containing intracellular vesicles in the range of approximately 0.5–8 μm in diameter were observed in the cytoplasm, but none were found in the nucleus. Vesicles containing quantum dots formed multivesicular body-like structures in NIH3T3 cells after 24 hours of incubation, which were Lysotracker-negative in serum-free medium and Lysotracker-positive in complete medium. The microinjected quantum dots remained uniformly distributed in the cytosol for at least 24 hours. Conclusion: Natural uptake of quantum dots in cells occurs through three accumulation stages via a mechanism requiring energy. The sharp contrast of the intracellular distribution after microinjection of quantum dots in comparison

Fabrication of quantum-dot devices in graphene

Directory of Open Access Journals (Sweden)

Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi

2010-01-01

Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.

Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

International Nuclear Information System (INIS)

Marti, A.; Lopez, N.; Antolin, E.; Canovas, E.; Stanley, C.; Farmer, C.; Cuadra, L.; Luque, A.

2006-01-01

The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation

Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

Energy Technology Data Exchange (ETDEWEB)

Marti, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)]. E-mail: amarti@etsit.upm.es; Lopez, N. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Antolin, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Canovas, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Stanley, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Farmer, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Cuadra, L. [Departamento de Teoria de la Senal y Comunicaciones- Escuela Politecnica Superior, Universidad de Alcala, Ctra. Madrid-Barcelona, km. 33600, 28805-Alcala de Henares (Madrid) (Spain); Luque, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)

2006-07-26

The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation.

Wetting layers effect on InAs/GaAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Sun Chao [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49(BUPT), Xitucheng Road No. 10, Beijing 100876 (China); Lu Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49(BUPT), Xitucheng Road No. 10, Beijing 100876 (China); Yu Zhongyuan; Cao Huawei; Zhang Lidong [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49(BUPT), Xitucheng Road No. 10, Beijing 100876 (China)

2012-11-15

FEM combining with the K{center_dot}P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5 nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%{approx}4.5% for the cases with WL (0.5 nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8 nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8 nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.

Wetting layers effect on InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Sun Chao; Lu Pengfei; Yu Zhongyuan; Cao Huawei; Zhang Lidong

2012-01-01

FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5 nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5 nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8 nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8 nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.

Photoinduced electric dipole in CuCl quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Naruse, Fumitaka; Kanno, Atsushi

2003-01-01

Electromodulated absorption spectra of CuCl quantum dots modulated at twice the modulation frequency of electric field, 2f, show prominent structure around persistently burned hole. It grows in proportion to square of the electric field in the same manner as the 2f component of electromodulated absorption spectra of the dots without the laser exposure. Even the f component of electromodulated signal was observed around the burned hole position. These observations are explained by considering electric dipole formed in hole burned and photoionized quantum dots. Photoionization not only produces persistent spectral hole burning but also the local built-in electric field and photoinduced dipole moment in quantum dots. The dipole moment is estimated to be about 5 debye for 3.2-nm-radius quantum dots. The dipole moments are randomly oriented but 1% anisotropy is deduced from the electromodulated signal at f

First principles study of edge carboxylated graphene quantum dots

Science.gov (United States)

Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.

2018-05-01

The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.

Multi-Excitonic Quantum Dot Molecules

Science.gov (United States)

Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Weber, Carsten

2008-07-01

This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

Science.gov (United States)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Spectroscopy characterization and quantum yield determination of quantum dots

International Nuclear Information System (INIS)

Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R

2016-01-01

In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)

Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

International Nuclear Information System (INIS)

Eslami, L.; Faizabadi, E.

2014-01-01

The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

Hexagonal graphene quantum dots

KAUST Repository

Ghosh, Sumit; Schwingenschlö gl, Udo

2016-01-01

We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

Hexagonal graphene quantum dots

KAUST Repository

Ghosh, Sumit

2016-12-05

We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

A theoretical study of exciton energy levels in laterally coupled quantum dots

International Nuclear Information System (INIS)

Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E

2009-01-01

A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.

Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

Science.gov (United States)

Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

2005-10-01

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

International Nuclear Information System (INIS)

Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

2014-01-01

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin-orbit effects in carbon-nanotube double quantum dots

DEFF Research Database (Denmark)

Weiss, S; Rashba, E I; Kuemmeth, Ferdinand

2010-01-01

We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

DEFF Research Database (Denmark)

Fiore, A.; Oesterle, U.; Stanley, R.P.

2001-01-01

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

Quantum dots and nanocomposites.

Science.gov (United States)

Mansur, Herman Sander

2010-01-01

Quantum dots (QDs), also known as semiconducting nanoparticles, are promising zero-dimensional advanced materials because of their nanoscale size and because they can be engineered to suit particular applications such as nonlinear optical devices (NLO), electro-optical devices, and computing applications. QDs can be joined to polymers in order to produce nanocomposites which can be considered a scientific revolution of the 21st century. One of the fastest moving and most exciting interfaces of nanotechnology is the use of QDs in medicine, cell and molecular biology. Recent advances in nanomaterials have produced a new class of markers and probes by conjugating semiconductor QDs with biomolecules that have affinities for binding with selected biological structures. The nanoscale of QDs ensures that they do not scatter light at visible or longer wavelengths, which is important in order to minimize optical losses in practical applications. Moreover, at this scale, quantum confinement and surface effects become very important and therefore manipulation of the dot diameter or modification of its surface allows the properties of the dot to be controlled. Quantum confinement affects the absorption and emission of photons from the dot. Thus, the absorption edge of a material can be tuned by control of the particle size. This paper reviews developments in the myriad of possibilities for the use of semiconductor QDs associated with molecules producing novel hybrid nanocomposite systems for nanomedicine and bioengineering applications.

Quantum dot solar cell

International Nuclear Information System (INIS)

Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

2009-01-01

Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

Periodic Scarred States in Open Quantum Dots as Evidence of Quantum Darwinism

Science.gov (United States)

Burke, A. M.; Akis, R.; Day, T. E.; Speyer, Gil; Ferry, D. K.; Bennett, B. R.

2010-04-01

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Hydrogenic impurity in double quantum dots

International Nuclear Information System (INIS)

Wang, X.F.

2007-01-01

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

Science.gov (United States)

Iikawa, F.; Donchev, V.; Ivanov, Ts; Dias, G. O.; Tizei, L. H. G.; Lang, R.; Heredia, E.; Gomes, P. F.; Brasil, M. J. S. P.; Cotta, M. A.; Ugarte, D.; Martinez Pastor, J. P.; de Lima, M. M., Jr.; Cantarero, A.

2011-02-01

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

International Nuclear Information System (INIS)

Iikawa, F; Donchev, V; Dias, G O; Tizei, L H G; Lang, R; Gomes, P F; Brasil, M J S P; Cotta, M A; Ugarte, D; Ivanov, Ts; Heredia, E; Martinez Pastor, J P; De Lima, M M Jr; Cantarero, A

2011-01-01

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

Energy Technology Data Exchange (ETDEWEB)

Iikawa, F; Donchev, V; Dias, G O; Tizei, L H G; Lang, R; Gomes, P F; Brasil, M J S P; Cotta, M A; Ugarte, D [Instituto de Fisica ' Gleb Wataghin' , Unicamp, CP-6165, 13083-970, Campinas-SP (Brazil); Ivanov, Ts [Faculty of Physics, Sofia University, 5, Boulevard J.Bourchier, Sofia-1164 (Bulgaria); Heredia, E [Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP 515, 12245-970, Sao Jose dos Campos-SP (Brazil); Martinez Pastor, J P; De Lima, M M Jr; Cantarero, A, E-mail: iikawa@ifi.unicamp.br [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

2011-02-11

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for obtaining an effective spatial separation of electrons and holes in the case of single layer InP/GaAs quantum-dot samples. In the present case this effect seems to be less critical due to the particular carrier wavefunction distribution along the structures.

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

Science.gov (United States)

Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

2014-07-03

The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

NARCIS (Netherlands)

Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

2007-01-01

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

Quantum dots: Rethinking the electronics

Energy Technology Data Exchange (ETDEWEB)

Bishnoi, Dimple [Department of Physics, S. S. Jain Subodh PG College, Jaipur, Rajasthan Pin-302004 (India)

2016-05-06

In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

Spin storage in quantum dot ensembles and single quantum dots

International Nuclear Information System (INIS)

Heiss, Dominik

2009-01-01

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

Spin storage in quantum dot ensembles and single quantum dots

Energy Technology Data Exchange (ETDEWEB)

Heiss, Dominik

2009-10-15

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

Electronic transport through a quantum dot chain with strong dot-lead coupling

International Nuclear Information System (INIS)

Liu, Yu; Zheng, Yisong; Gong, Weijiang; Gao, Wenzhu; Lue, Tianquan

2007-01-01

By means of the non-equilibrium Green function technique, the electronic transport through an N-quantum-dot chain is theoretically studied. By calculating the linear conductance spectrum and the local density of states in quantum dots, we find the resonant peaks in the spectra coincides with the eigen-energies of the N-quantum-dot chain when the dot-lead coupling is relatively weak. With the increase of the dot-lead coupling, such a correspondence becomes inaccurate. When the dot-lead coupling exceeds twice the interdot coupling, such a mapping collapses completely. The linear conductance turn to reflect the eigen-energies of the (N-2)- or (N-1)-quantum dot chain instead. The two peripheral quantum dots do not manifest themselves in the linear conductance spectrum. More interestingly, with the further increase of the dot-lead coupling, the system behaves just like an (N-2)- or (N-1)-quantum dot chain in weak dot-lead coupling limit, since the resonant peaks becomes narrower with the increase of dot-lead coupling

Non-blinking quantum dot with a plasmonic nanoshell resonator

Science.gov (United States)

Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

2015-02-01

Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Science.gov (United States)

Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

2014-03-01

The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

Probing long-lived dark excitons in self-assembled quantum dots

DEFF Research Database (Denmark)

Johansen, Jeppe; Julsgaard, Brian; Stobbe, Søren

2010-01-01

Long-lived dark exciton states are formed in self-assembled quantum dots due to the combination of the angular momentum of electrons and holes. The lifetime of dark excitons are determined by spin-flip processes that transfer dark excitons into radiative bright excitons. We employ time......-resolved spontaneous emission measurements in a modified local density of optical states to unambiguously record the spin-flip rate. Pronounced variations in the spin-flip rate with the quantum dot emission energy are observed demonstrating that the exciton storage time can be extended by controlling the quantum dot......, which illustrates the important role of interfaces for quantum dot based nanophotonic structures....

Magnon-driven quantum dot refrigerators

Energy Technology Data Exchange (ETDEWEB)

Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan, E-mail: jcchen@xmu.edu.cn

2015-12-18

Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure

Energy Technology Data Exchange (ETDEWEB)

Kurtze, H.; Bayer, M. [Experimentelle Physik 2, TU Dortmund, D-44221 Dortmund (Germany)

2016-07-04

Sophisticated models have been worked out to explain the fast relaxation of carriers into quantum dot ground states after non-resonant excitation, overcoming the originally proposed phonon bottleneck. We apply a magnetic field along the quantum dot heterostructure growth direction to transform the confined level structure, which can be approximated by a Fock–Darwin spectrum, from a nearly equidistant level spacing at zero field to strong anharmonicity in finite fields. This changeover leaves the ground state carrier population rise time unchanged suggesting that fast relaxation is maintained upon considerable changes of the level spacing. This corroborates recent models explaining the relaxation by polaron formation in combination with quantum kinetic effects.

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

International Nuclear Information System (INIS)

Eliseev, P G; Li, H; Liu, G T; Stintz, A; Newell, T C; Lester, L E; Malloy, K J

2000-01-01

The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm -2 . A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be ∼7 x 10 -15 cm -2 . (lasers)

Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.

Science.gov (United States)

Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin

2017-06-27

Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Si quantum dot structures and their applications

Science.gov (United States)

Shcherbyna, L.; Torchynska, T.

2013-06-01

This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

Quantum optics with quantum dots in photonic nanowires

DEFF Research Database (Denmark)

We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....

Orientation-dependent imaging of electronically excited quantum dots

Science.gov (United States)

Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

2018-02-01

We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

Biocompatible Quantum Dots for Biological Applications

Science.gov (United States)

Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

2011-01-01

Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

Charge transport in quantum dot organic solar cells with Si quantum dots sandwiched between poly(3-hexylthiophene) (P3HT) absorber and bathocuproine (BCP) transport layers

Science.gov (United States)

Verma, Upendra Kumar; Kumar, Brijesh

2017-10-01

We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).

A fabrication guide for planar silicon quantum dot heterostructures

Science.gov (United States)

Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

2018-04-01

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

Vacuum-induced coherence in quantum dot systems

Science.gov (United States)

Sitek, Anna; Machnikowski, Paweł

2012-11-01

We present a theoretical study of vacuum-induced coherence in a pair of vertically stacked semiconductor quantum dots. The process consists in a coherent excitation transfer from a single-exciton state localized in one dot to a delocalized state in which the exciton occupation gets trapped. We study the influence of the factors characteristic of quantum dot systems (as opposed to natural atoms): energy mismatch, coupling between the single-exciton states localized in different dots, and different and nonparallel dipoles due to sub-band mixing, as well as coupling to phonons. We show that the destructive effect of the energy mismatch can be overcome by an appropriate interplay of the dipole moments and coupling between the dots which allows one to observe the trapping effect even in a structure with technologically realistic energy splitting of the order of milli-electron volts. We also analyze the impact of phonon dynamics on the occupation trapping and show that phonon effects are suppressed in a certain range of system parameters. This analysis shows that the vacuum-induced coherence effect and the associated long-living trapped excitonic population can be achieved in quantum dots.

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes

Energy Technology Data Exchange (ETDEWEB)

Le, Quyet Van [School; Kim, Jong Beom [Department; Kim, Soo Young [School; Lee, Byeongdu [X-ray; Lee, Dong Ryeol [Department

2017-08-15

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Quantum size effect and thermal stability of carbon-nanotube-based quantum dot

International Nuclear Information System (INIS)

Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.

2004-01-01

Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)

Large quantum dots with small oscillator strength

DEFF Research Database (Denmark)

Stobbe, Søren; Schlereth, T.W.; Höfling, S.

2010-01-01

We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

3 ns single-shot read-out in a quantum dot-based memory structure

International Nuclear Information System (INIS)

Nowozin, T.; Bimberg, D.; Beckel, A.; Lorke, A.; Geller, M.

2014-01-01

Fast read-out of two to six charges per dot from the ground and first excited state in a quantum dot (QD)-based memory is demonstrated using a two-dimensional electron gas. Single-shot measurements on modulation-doped field-effect transistor structures with embedded InAs/GaAs QDs show read-out times as short as 3 ns. At low temperature (T = 4.2 K) this read-out time is still limited by the parasitics of the setup and the device structure. Faster read-out times and a larger read-out signal are expected for an improved setup and device structure

Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

Science.gov (United States)

Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

2013-12-27

The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

International Nuclear Information System (INIS)

Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

2009-01-01

Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

Photonic emitters and circuits based on colloidal quantum dot composites

Science.gov (United States)

Menon, Vinod M.; Husaini, Saima; Valappil, Nikesh; Luberto, Matthew

2009-02-01

We discuss our work on light emitters and photonic circuits realized using colloidal quantum dot composites. Specifically we will report our recent work on flexible microcavity laser, microdisk emitters and integrated active - passive waveguides. The entire microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. The microdisk emitters and the integrated waveguide structures were realized using soft lithography and photo-lithography, respectively and were fabricated using a composite consisting of quantum dots embedded in SU8 matrix. Finally, we will discuss the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements. In addition to their specific functionalities, these novel device demonstrations and their development present a low cost alternative to the traditional photonic device fabrication techniques.

Studies of quantum dots in the quantum Hall regime

Science.gov (United States)

Goldmann, Eyal

We present two studies of quantum dots in the quantum Hall regime. In the first study, presented in Chapter 3, we investigate the edge reconstruction phenomenon believed to occur when the quantum dot filling fraction is n≲1 . Our approach involves the examination of large dots (≤40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wavefunctions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction. In the second study, presented in Chapter 4, we investigate quantum dots in the fractional quantum Hall regime using a Hartree formulation of composite fermion theory. We find that under appropriate conditions, the chemical potential of the dots oscillates periodically with B due to the transfer of composite fermions between quasi-Landau bands. This effect is analogous the addition spectrum oscillations which occur in quantum dots in the integer quantum Hall regime. Period f0 oscillations are found in sharply confined dots with filling factors nu = 2/5 and nu = 2/3. Period 3 f0 oscillations are found in a parabolically confined nu = 2/5 dot. More generally, we argue that the oscillation period of dots with band pinning should vary continuously with B, whereas the period of dots without band pinning is f0 .

Bilayer graphene quantum dot defined by topgates

Energy Technology Data Exchange (ETDEWEB)

Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

2014-06-21

We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

Modeling of phonon- and Coulomb-mediated capture processes in quantum dots

DEFF Research Database (Denmark)

Magnúsdóttir, Ingibjörg

2003-01-01

This thesis describes modeling of carrier relaxation processes in self-assembled quantum-dot-structures, with particular emphasis on carrier capture processes in quantum dots. Relaxation by emission of lontitudinal optical (LO) phonons is very efficient in bulk semiconductors and nanostructures...... of higher dimensionality. Here, we investigate carrier capture processes into quantum dots, mediated by emission of one and two LO phonons. In these investigations is is assumed that the dot is empty initially. In the Case of single-phonon capture we also investigate the influence of the presence...... of a charge in the quantum-dot state to which the capture takes place. In general, capture rates are of the same order as capture rates into an empty dot state, but in some cases the dot-size interval for which the capture process is energetically allowed, is considerably reduced.The above calculations...

Distributed quantum information processing via quantum dot spins

International Nuclear Information System (INIS)

Jun, Liu; Qiong, Wang; Le-Man, Kuang; Hao-Sheng, Zeng

2010-01-01

We propose a scheme to engineer a non-local two-qubit phase gate between two remote quantum-dot spins. Along with one-qubit local operations, one can in principal perform various types of distributed quantum information processing. The scheme employs a photon with linearly polarisation interacting one after the other with two remote quantum-dot spins in cavities. Due to the optical spin selection rule, the photon obtains a Faraday rotation after the interaction process. By measuring the polarisation of the final output photon, a non-local two-qubit phase gate between the two remote quantum-dot spins is constituted. Our scheme may has very important applications in the distributed quantum information processing

Resonant electronic transport through a triple quantum-dot with Λ-type level structure under dual radiation fields

International Nuclear Information System (INIS)

Guan, Chun; Xing, Yunhui; Zhang, Chao; Ma, Zhongshui

2014-01-01

Due to quantum interference, light can transmit through dense atomic media, a phenomenon known as electromagnetically induced transparency (EIT). We propose that EIT is not limited to light transmission and there is an electronic analog where resonant transparency in charge transport in an opaque structure can be induced by electromagnetic radiation. A triple-quantum-dots system with Λ-type level structure is generally opaque due to the level in the center dot being significantly higher and therefore hopping from the left dot to the center dot is almost forbidden. We demonstrate that an electromagnetically induced electron transparency (EIET) in charge of transport can indeed occur in the Λ-type system. The direct evidence of EIET is that an electron can travel from the left dot to the right dot, while the center dot apparently becomes invisible. We analyze EIET and the related shot noise in both the zero and strong Coulomb blockade regimes. It is found that the EIET (position, height, and symmetry) can be tuned by several controllable parameters of the radiation fields, such as the Rabi frequencies and detuning frequencies. The result offers a transparency/opaque tuning technique in charge transport using interfering radiation fields

Novel tandem structure employing mesh-structured Cu2S counter electrode for enhanced performance of quantum dot-sensitized solar cells

International Nuclear Information System (INIS)

Yang, Yue-Yong; Zhang, Quan-Xin; Wang, Tian-Zi; Zhu, Li-Feng; Huang, Xiao-Ming; Zhang, Yi-Duo; Hu, Xing; Li, Dong-Mei; Luo, Yan-Hong; Meng, Qing-Bo

2013-01-01

Highlights: ► This is the first report on practical tandem structures for quantum dot-sensitized solar cells (QDSCs). ► Mesh-structured Cu 2 S counter electrode exhibits high catalytic activity and good transmittance. ► Influence of photoanode thickness on tandem QDSCs has been systematically studied. ► Tandem QDSCs shows higher photocurrent and efficiency as against the single-photoanode cell. ► This structure can achieve higher efficiency with different QD sensitizers for complementary spectral responses. -- Abstract: A practical tandem structure with a semitransparent mesh-structured Cu 2 S counter electrode sandwiched between two TiO 2 photoelectrodes has been designed for quantum dot-sensitized solar cells (QDSCs). The mesh-structured Cu 2 S counter electrode exhibits high catalytic activity for polysulfide electrolyte. CdS/CdSe quantum dot-sensitized TiO 2 films have been applied as both top and bottom photoelectrodes to testify the effectiveness of the tandem structure. The influence of the TiO 2 film thickness on the performance of the tandem cell has been systematically studied. The optimized tandem QDSC shows an improved photocurrent and 12-percent increase of efficiency over the top cell with a 4.7 μm thick top cell and an 11.0 μm thick bottom cell, presenting a new effective approach towards highly efficient QDSCs

Colloidal quantum dot solar cells exploiting hierarchical structuring

KAUST Repository

Labelle, André J.; Thon, Susanna; Masala, Silvia; Adachi, Michael M.; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H.; Fratalocchi, Andrea; Sargent, E. H.

2015-01-01

Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells

Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

International Nuclear Information System (INIS)

Djie, H. S.; Wang, D.-N.; Ooi, B. S.; Hwang, J. C. M.; Gunawan, O.

2006-01-01

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO 2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots

Silicon quantum dots: surface matters

Czech Academy of Sciences Publication Activity Database

Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

2014-01-01

Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

Energy Technology Data Exchange (ETDEWEB)

Absalan, H; SalmanOgli, A; Rostami, R

2013-07-31

The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

Spin-based quantum computation in multielectron quantum dots

OpenAIRE

Hu, Xuedong; Sarma, S. Das

2001-01-01

In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single spin system unles...

Optical properties of quantum-dot-doped liquid scintillators

International Nuclear Information System (INIS)

Aberle, C; Winslow, L; Li, J J; Weiss, S

2013-01-01

Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO

Optical Signatures of Coupled Quantum Dots

Science.gov (United States)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Korenev, V. L.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.

2006-02-01

An asymmetric pair of coupled InAs quantum dots is tuned into resonance by applying an electric field so that a single hole forms a coherent molecular wave function. The optical spectrum shows a rich pattern of level anticrossings and crossings that can be understood as a superposition of charge and spin configurations of the two dots. Coulomb interactions shift the molecular resonance of the optically excited state (charged exciton) with respect to the ground state (single charge), enabling light-induced coupling of the quantum dots. This result demonstrates the possibility of optically coupling quantum dots for application in quantum information processing.

Theory of Spin States of Quantum Dot Molecules

Science.gov (United States)

Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

2007-04-01

The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

Magnetic control of dipolaritons in quantum dots

International Nuclear Information System (INIS)

Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A

2016-01-01

Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)

Quantum dot-polymer conjugates for stable luminescent displays.

Science.gov (United States)

Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

2018-05-23

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

Quantum measurement of coherent tunneling between quantum dots

International Nuclear Information System (INIS)

Wiseman, H. M.; Utami, Dian Wahyu; Sun, He Bi; Milburn, G. J.; Kane, B. E.; Dzurak, A.; Clark, R. G.

2001-01-01

We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is subjected to a measurement of its occupation number by coupling it to a third readout dot via the Coulomb interaction. The readout dot is coupled to source and drain leads under weak bias, and a tunnel current flows through a single bound state when energetically allowed. The occupation of the quantum dot near the readout dot shifts the bound state of the readout dot from a low conducting state to a high conducting state. The measurement is made by continuously monitoring the tunnel current through the readout dot. We show that there is a difference between the time scale for the measurement-induced decoherence between the localized states of the dots, and the time scale on which the system becomes localized due to the measurement

GaN quantum dots: from basic understanding to unique applications

International Nuclear Information System (INIS)

Pelekanos, N T; Dialynas, G E; Simon, J; Mariette, H; Daudin, B

2005-01-01

The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)

Strain-tunable quantum dot devices

International Nuclear Information System (INIS)

Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

2011-01-01

We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

Silicon Quantum Dots for Quantum Information Processing

Science.gov (United States)

2013-11-01

S. Lai, C. Tahan, A. Morello and A. S. Dzurak, Electron Spin lifetimes in multi-valley sil- icon quantum dots, S3NANO Winter School Few spin solid...lifetimes in multi-valley sil- icon quantum dots, International Workshop on Silicon Quantum Electronics, Grenoble, France, February 2012 (Poster). C...typically plunger gates), PMMA A5 is spun at 5000 rpm for 30 seconds, resulting in a 280 nm resist thickness. The resists are baked for 90 seconds at 180

Nonradiative recombination in GaN quantum dots formed in the AlN matrix

International Nuclear Information System (INIS)

Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

2009-01-01

The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

Science.gov (United States)

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Electron Transport in Coupled Quantum Dots

National Research Council Canada - National Science Library

Antoniadis, D

1998-01-01

In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

An orientation analysis method for protein immobilized on quantum dot particles

Energy Technology Data Exchange (ETDEWEB)

Aoyagi, Satoka, E-mail: aoyagi@life.shimane-u.ac.jp [Faculty of Life and Environmental Science, Shimane University, 1060 Matsue-shi, Shimane 690-8504 (Japan); Inoue, Masae [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

2009-11-30

The evaluation of orientation of biomolecules immobilized on nanodevices is crucial for the development of high performance devices. Such analysis requires ultra high sensitivity so as to be able to detect less than one molecular layer on a device. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has sufficient sensitivity to evaluate the uppermost surface structure of a single molecular layer. The objective of this study is to develop an orientation analysis method for proteins immobilized on nanomaterials such as quantum dot particles, and to evaluate the orientation of streptavidin immobilized on quantum dot particles by means of TOF-SIMS. In order to detect fragment ions specific to the protein surface, a monoatomic primary ion source (Ga{sup +}) and a cluster ion source (Au{sub 3}{sup +}) were employed. Streptavidin-immobilized quantum dot particles were immobilized on aminosilanized ITO glass plates at amino groups by covalent bonding. The reference samples streptavidin directly immobilized on ITO plates were also prepared. All samples were dried with a freeze dryer before TOF-SIMS measurement. The positive secondary ion spectra of each sample were obtained using TOF-SIMS with Ga{sup +} and Au{sub 3}{sup +}, respectively, and then they were compared so as to characterize each sample and detect the surface structure of the streptavidin immobilized with the biotin-immobilized quantum dots. The chemical structures of the upper surface of the streptavidin molecules immobilized on the quantum dot particles were evaluated with TOF-SIMS spectra analysis. The indicated surface side of the streptavidin molecules immobilized on the quantum dots includes the biotin binding site.

Graphene quantum dots

CERN Document Server

Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

2014-01-01

This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

Hybrid quantum-classical modeling of quantum dot devices

Science.gov (United States)

Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

2017-11-01

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

Quantum features of semiconductor quantum dots

International Nuclear Information System (INIS)

Lozada-Cassou, M.; Dong Shihai; Yu Jiang

2004-01-01

The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly

Near-field light design with colloidal quantum dots for photonics and plasmonics.

Science.gov (United States)

Kress, Stephan J P; Richner, Patrizia; Jayanti, Sriharsha V; Galliker, Patrick; Kim, David K; Poulikakos, Dimos; Norris, David J

2014-10-08

Colloidal quantum-dots are bright, tunable emitters that are ideal for studying near-field quantum-optical interactions. However, their colloidal nature has hindered their facile and precise placement at desired near-field positions, particularly on the structured substrates prevalent in plasmonics. Here, we use high-resolution electro-hydrodynamic printing (quantum dots on both flat and structured substrates with a few nanometer precision. We also demonstrate that the autofocusing capability of the printing method enables placement of quantum dots preferentially at plasmonic hot spots. We exploit this control and design diffraction-limited photonic and plasmonic sources with arbitrary wavelength, shape, and intensity. We show that simple far-field illumination can excite these near-field sources and generate fundamental plasmonic wave-patterns (plane and spherical waves). The ability to tailor subdiffraction sources of plasmons with quantum dots provides a complementary technique to traditional scattering approaches, offering new capabilities for nanophotonics.

Local field effects and metamaterials based on colloidal quantum dots

International Nuclear Information System (INIS)

Porvatkina, O V; Tishchenko, A A; Strikhanov, M N

2015-01-01

Metamaterials are composite structures that exhibit interesting and unusual properties, e.g. negative refractive index. In this article we consider metamaterials based on colloidal quantum dots (CQDs). We investigate these structures taking into account the local field effects and theoretically analyze expressions for permittivity and permeability of metamaterials based on CdSe CQDs. We obtain inequality describing the conditions when material with definite concentration of CQDs is metamaterial. Also we investigate how the values of dielectric polarizability and magnetic polarizability of CQDs depend on the dots radius and properties the material the quantum dots are made of. (paper)

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

Energy Technology Data Exchange (ETDEWEB)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

2017-07-01

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Optical anisotropy in vertically coupled quantum dots

DEFF Research Database (Denmark)

Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

1999-01-01

We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

Andreev molecules in semiconductor nanowire double quantum dots.

Science.gov (United States)

Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

2017-09-19

Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

Correlated Coulomb drag in capacitively coupled quantum-dot structures

DEFF Research Database (Denmark)

Kaasbjerg, Kristen; Jauho, Antti-Pekka

2016-01-01

We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs) -- a biasdriven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach which accounts for higher-order tunneling (cotunneling......) processes as well as energy-dependent lead couplings, and identify a mesoscopic Coulomb drag mechanism driven by nonlocal multi-electron cotunneling processes. Our theory establishes the conditions for a nonzero drag as well as the direction of the drag current in terms of microscopic system parameters...... on Coulomb drag in CQD systems....

Synthesis and characterization of graphene quantum dots/cobalt ferrite nanocomposite

Science.gov (United States)

Ramachandran, Shilpa; Sathishkumar, M.; Kothurkar, Nikhil K.; Senthilkumar, R.

2018-02-01

A facile method has been developed for the synthesis of a graphene quantum dots/cobalt ferrite nanocomposite. Graphene quantum dots (GQDs) were synthesized by a simple bottom-up method using citric acid, followed by the co-precipitation of cobalt ferrite nanoparticles on the graphene quantum dots. The morphology, structural analysis, optical properties, magnetic properties were investigated using transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV-vis absorption spectroscopy, fluorescence spectroscopy, vibrating sample magnetometry (VSM) measurements. The synthesized nanocomposite showed good fluorescence and superparamagnetic properties, which are important for biomedical applications.

Nanostructured Quantum Dots or Dashes in Photovoltaic Devices and Methods Thereof

Science.gov (United States)

Raffaele, Ryne P. (Inventor); Wilt, David M. (Inventor)

2015-01-01

A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Quantum dot solar cells

CERN Document Server

Wu, Jiang

2013-01-01

The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Rodt, S.; Seguin, R.; Schliwa, A.; Guffarth, F.; Poetschke, K.; Pohl, U.W.; Bimberg, D.

2007-01-01

A systematic study of excitonic complexes confined in single InAs/GaAs quantum dots is presented. Emphasis is placed on the recombination energies of the excitonic complexes and on the fine-structure splitting of the bright exciton ground state. The values depend in a characteristic way on the size of the respective quantum dot which controls the number of bound hole states and the piezoelectric potential

Synthetic Developments of Nontoxic Quantum Dots.

Science.gov (United States)

Das, Adita; Snee, Preston T

2016-03-03

Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

2014-04-24

CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

Internalization of targeted quantum dots by brain capillary endothelial cells in vivo.

Science.gov (United States)

Paris-Robidas, Sarah; Brouard, Danny; Emond, Vincent; Parent, Martin; Calon, Frédéric

2016-04-01

Receptors located on brain capillary endothelial cells forming the blood-brain barrier are the target of most brain drug delivery approaches. Yet, direct subcellular evidence of vectorized transport of nanoformulations into the brain is lacking. To resolve this question, quantum dots were conjugated to monoclonal antibodies (Ri7) targeting the murine transferrin receptor. Specific transferrin receptor-mediated endocytosis of Ri7-quantum dots was first confirmed in N2A and bEnd5 cells. After intravenous injection in mice, Ri7-quantum dots exhibited a fourfold higher volume of distribution in brain tissues, compared to controls. Immunofluorescence analysis showed that Ri7-quantum dots were sequestered throughout the cerebral vasculature 30 min, 1 h, and 4 h post injection, with a decline of signal intensity after 24 h. Transmission electron microscopic studies confirmed that Ri7-quantum dots were massively internalized by brain capillary endothelial cells, averaging 37 ± 4 Ri7-quantum dots/cell 1 h after injection. Most quantum dots within brain capillary endothelial cells were observed in small vesicles (58%), with a smaller proportion detected in tubular structures or in multivesicular bodies. Parenchymal penetration of Ri7-quantum dots was extremely low and comparable to control IgG. Our results show that systemically administered Ri7-quantum dots complexes undergo extensive endocytosis by brain capillary endothelial cells and open the door for novel therapeutic approaches based on brain endothelial cell drug delivery. © The Author(s) 2015.

Quantum Dot Systems: a versatile platform for quantum simulations

International Nuclear Information System (INIS)

Barthelemy, Pierre; Vandersypen, Lieven M.K.

2013-01-01

Quantum mechanics often results in extremely complex phenomena, especially when the quantum system under consideration is composed of many interacting particles. The states of these many-body systems live in a space so large that classical numerical calculations cannot compute them. Quantum simulations can be used to overcome this problem: complex quantum problems can be solved by studying experimentally an artificial quantum system operated to simulate the desired hamiltonian. Quantum dot systems have shown to be widely tunable quantum systems, that can be efficiently controlled electrically. This tunability and the versatility of their design makes them very promising quantum simulators. This paper reviews the progress towards digital quantum simulations with individually controlled quantum dots, as well as the analog quantum simulations that have been performed with these systems. The possibility to use large arrays of quantum dots to simulate the low-temperature Hubbard model is also discussed. The main issues along that path are presented and new ideas to overcome them are proposed. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical Studies of Single Quantum Dots

National Research Council Canada - National Science Library

Gammon, Daniel; Steel, Duncan G

2002-01-01

...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

Dicke states in multiple quantum dots

Science.gov (United States)

Sitek, Anna; Manolescu, Andrei

2013-10-01

We present a theoretical study of the collective optical effects which can occur in groups of three and four quantum dots. We define conditions for stable subradiant (dark) states, rapidly decaying super-radiant states, and spontaneous trapping of excitation. Each quantum dot is treated like a two-level system. The quantum dots are, however, realistic, meaning that they may have different transition energies and dipole moments. The dots interact via a short-range coupling which allows excitation transfer across the dots, but conserves the total population of the system. We calculate the time evolution of single-exciton and biexciton states using the Lindblad equation. In the steady state the individual populations of each dot may have permanent oscillations with frequencies given by the energy separation between the subradiant eigenstates.

Core–shell quantum dots: Properties and applications

Energy Technology Data Exchange (ETDEWEB)

Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

2015-07-05

Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

Core–shell quantum dots: Properties and applications

International Nuclear Information System (INIS)

Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

2015-01-01

Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

Correlation effects in side-coupled quantum dots

International Nuclear Information System (INIS)

Zitko, R; Bonca, J

2007-01-01

Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures

Quantum-dot-in-perovskite solids

KAUST Repository

Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H.

2015-01-01

© 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

Quantum-dot-in-perovskite solids

KAUST Repository

Ning, Zhijun

2015-07-15

© 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

Numerical simulation of electronic properties of coupled quantum dots on wetting layers

International Nuclear Information System (INIS)

Betcke, M M; Voss, H

2008-01-01

Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

NARCIS (Netherlands)

Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.

2011-01-01

We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be

Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

DEFF Research Database (Denmark)

Chen, Miaoxiang Max; Kobashi, Kazufumi

2012-01-01

Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multis......Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist...

Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

Directory of Open Access Journals (Sweden)

Nobuaki Hatori

2015-04-01

Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

International Nuclear Information System (INIS)

Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Akira

2015-01-01

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

International Nuclear Information System (INIS)

Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

2015-01-01

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

Dynamics of plasmonic field polarization induced by quantum coherence in quantum dot-metallic nanoshell structures.

Science.gov (United States)

Sadeghi, S M

2014-09-01

When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.

Entangled exciton states in quantum dot molecules

Science.gov (United States)

Bayer, Manfred

2002-03-01

Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

Detecting strain wave propagation through quantum dots by pump-probe spectroscopy: A theoretical analysis

International Nuclear Information System (INIS)

Huneke, J; Kuhn, T; Axt, V M

2010-01-01

The influence of strain waves traveling across a quantum dot structure on its optical response is studied for two different situations: First, a strain wave is created by the optical excitation of a single quantum dot near a surface which, after reflection at the surface, reenters the dot; second, a phonon wave packet is emitted by the excitation of a nearby second dot and then travels across the quantum dot. Pump-probe type excitations are simulated for quantum dots in the strong confinement limit. We show that the optical signals allow us to monitor crossing strain waves for both structures in the real-time response as well as in the corresponding pump-probe spectra. In the time-derivative of the phase of the polarization a distinct trace reflects the instantaneous shifts of the transition energy during the passage while in the spectra pronounced oscillations reveal the passage of the strain waves.

Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots

International Nuclear Information System (INIS)

Wang, Chen; Cao, Jianshu; Ren, Jie

2014-01-01

We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices

Quantum transport in a ring of quantum dots

Energy Technology Data Exchange (ETDEWEB)

Sena Junior, Marcone I.; Macedo, Antonio M.C. [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Fisica

2012-07-01

Full text: Quantum dots play a central role in the recent technological efforts to build efficient devices to storage, process and transmit information in the quantum regime [1]. One of the reasons for this interest is the relative simplicity with which its control parameters can be changed by experimentalists. Systems with one, two and even arrays of quantum dots have been intensively studied with respect to their efficiency in processing information carried by charge, spin and heat [1]. A particularly useful realization of a quantum dot is a ballistic electron cavity formed by electrostatic potentials in a two-dimensional electron gas. In the chaotic regime, the shape of the dot is statistically irrelevant and the ability to change its form via external gates can be used to generate members of an ensemble of identical systems. From a theoretical point of view, such quantum dots are ideal electron systems in which to study theoretical models combining phase-coherence, chaotic dynamics and Coulomb interactions. In this work, we use the Keldysh non-linear sigma model [2] with a counting field to study electron transport through a ring of four chaotic quantum dots pierced by an Aharonov-Bohm flux. This system is particularly well suited for studying ways to use the weak-localization effect to process quantum information. We derive the quantum circuit equations for this system from the saddle-point condition of the Keldysh action. The results are used to build the action of the corresponding supersymmetric (SUSY) non-linear sigma model. The connection with the random scattering matrix approach is then made via the color-flavor transformation. In the perturbative regime, where weak-localization effects appear, the Keldysh, SUSY and random scattering matrix approaches can be compared by means of independent analytical calculations. We conclude by pointing out the many advantages of our unified approach. [1] For a review, see Yu. V. Nazarov, and Ya. M. Blanter, Quantum

Quantum dot systems: artificial atoms with tunable properties

International Nuclear Information System (INIS)

Weis, J.

2005-01-01

Full text: Quantum dots - also called zero-dimensional electron systems or artificial atoms - are physical objects where the constituent electrons are confined in a small spatial region, leading to discrete eigenvalues for the energies of the confined electrons. Large quantum dots offer a dense energy spectrum comparable to that of metallic grains, whereas small quantum dots more closely resemble atoms in their electronic properties. Quantum dots can be linked to leads by tunnel barriers, hence permitting electrical transport measurements: Coulomb blockade and single-electron charging effects are observed due to the repulsive electron electron interaction on the quantum dot site. Usually fabricated by conventional semiconductor growth and processing technology, the advantage is that both simple and also more complex quantum dot systems can be designed to purpose, acting as model systems with in-situ tunable parameters such as the number of confined electrons in the quantum dot and the strength of the tunnel coupling to the leads, electrostatically controlled by the applied voltages to gate electrodes. With increasing the tunnel coupling to the leads, the virtual occupation of the quantum dot from the leads becomes more and more important -- the simple description of electrical transport by single-electron tunneling events breaks down. The basic physics is described by the Kondo physics based on the Anderson impurity model. A system consisting of strongly electrostatically coupled quantum dots with separate leads to each quantum dot represent another realization of the Anderson impurity model. Experiments to verify the analogy are presented. The experimental data embedded within this tutorial have been obtained with Alexander Huebel, Matthias Keller, Joerg Schmid, David Quirion, Armin Welker, Ulf Wilhelm, and Klaus von Klitzing. (author)

Froehlih coupling with LO-phonons in quantum dots. Huang-Rhys phenomena

International Nuclear Information System (INIS)

Banyai, L.

1991-01-01

The quantum coupling between photoexcited carriers and longitudinal optical (LO) phonons in zero-dimensional structures (quantum dots) is considered. A classical model of the electron-phonon interaction is presented. The polarization field is then quantized and the Huang-Rhys phenomenon is observed. Effects induced by the quantization of the electron system are also considered. Finally, the modifications of the theory due to specific aspects of quantum dots are discussed. (Author)

Using of Quantum Dots in Biology and Medicine.

Science.gov (United States)

Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

2018-01-01

Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

Spin current through quantum-dot spin valves

International Nuclear Information System (INIS)

Wang, J; Xing, D Y

2006-01-01

We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

Characterization of self-organized InGaN/GaN quantum dots by Diffraction Anomalous Fine Structure (DAFS)

International Nuclear Information System (INIS)

Piskorska, E.; Holy, V.; Siebert, M.; Schmidt, Th.; Falta, J.; Yamaguchi, T.; Hommel, D.; Renevier, H.

2006-01-01

The local chemical composition of InGaN quantum dots grown by a MBE method on GaN virtual substrates was investigated by x-ray diffraction anomalous fine-structure method. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms at different positions in the dots. Using this approach, we found that the In content increases from 20% at the dot base to 40-50% at the top. (author) [pl

Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots

DEFF Research Database (Denmark)

Rudner, Mark Spencer; Levitov, Leonid

2013-01-01

Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce......) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods....

Quantum Dot Photonics

Science.gov (United States)

Kinnischtzke, Laura A.

We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.

Approximate calculation of electronic energy levels of axially symmetric quantum dot and quantum ring by using energy dependent effective mass

International Nuclear Information System (INIS)

Yu-Min, Liu; Zhong-Yuan, Yu; Xiao-Min, Ren

2009-01-01

Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrödinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail. (general)

Bright infrared LEDs based on colloidal quantum-dots

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2013-01-01

Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

Science.gov (United States)

Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-11-01

Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

Influence of surface states of CuInS{sub 2} quantum dots in quantum dots sensitized photo-electrodes

Energy Technology Data Exchange (ETDEWEB)

Peng, Zhuoyin; Liu, Yueli [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Wu, Lei [School of Electronic and Electrical, Wuhan Railway Vocational College of Technology, Wuhan 430205 (China); Zhao, Yinghan; Chen, Keqiang [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2016-12-01

Graphical abstract: J–V curves of different ligands capped CuInS{sub 2} QDs sensitized TiO{sub 2} photo-electrodes. - Highlights: • DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared. • Surface states of quantum dots greatly influence the electrochemical performance of CuInS{sub 2} quantum dot sensitized photo-electrodes. • S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes. - Abstract: Surface states are significant factor for the enhancement of electrochemical performance in CuInS{sub 2} quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S{sup 2−} ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S{sup 2−}-capped CuInS{sub 2} quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures

Science.gov (United States)

Taddei, S.; Colocci, M.; Vinattieri, A.; Bogani, F.; Franchi, S.; Frigeri, P.; Lazzarini, L.; Salviati, G.

2000-10-01

Vertically ordered quantum dots in multilayer InAs/GaAs structures have attracted large interest in recent years for device application as light emitters. Contradictory claims on the dependence of the fundamental transition energy on the interlayer separation and number of dot layers have been reported in the literature. We show that either a blueshift or a redshift of the fundamental transition energy can be observed in different coupling conditions and straightforwardly explained by including strain, indium segregation, and electron-hole Coulomb interaction, in good agreement with experimental results.

Near-field strong coupling of single quantum dots.

Science.gov (United States)

Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert

2018-03-01

Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

Design of quantum dot lattices in amorphous matrices by ion beam irradiation

International Nuclear Information System (INIS)

Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Jaksic, M.; Salamon, K.; Drazic, G.; Bernstorff, S.; Holy, V.

2011-01-01

We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.

Electron interaction and spin effects in quantum wires, quantum dots and quantum point contacts: a first-principles mean-field approach

International Nuclear Information System (INIS)

Zozoulenko, I V; Ihnatsenka, S

2008-01-01

We have developed a mean-field first-principles approach for studying electronic and transport properties of low dimensional lateral structures in the integer quantum Hall regime. The electron interactions and spin effects are included within the spin density functional theory in the local density approximation where the conductance, the density, the effective potentials and the band structure are calculated on the basis of the Green's function technique. In this paper we present a systematic review of the major results obtained on the energetics, spin polarization, effective g factor, magnetosubband and edge state structure of split-gate and cleaved-edge overgrown quantum wires as well as on the conductance of quantum point contacts (QPCs) and open quantum dots. In particular, we discuss how the spin-resolved subband structure, the current densities, the confining potentials, as well as the spin polarization of the electron and current densities in quantum wires and antidots evolve when an applied magnetic field varies. We also discuss the role of the electron interaction and spin effects in the conductance of open systems focusing our attention on the 0.7 conductance anomaly in the QPCs. Special emphasis is given to the effect of the electron interaction on the conductance oscillations and their statistics in open quantum dots as well as to interpretation of the related experiments on the ultralow temperature saturation of the coherence time in open dots

Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2015-02-07

Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

Attachment of Quantum Dots on Zinc Oxide Nanorods

Science.gov (United States)

Seay, Jared; Liang, Huan; Harikumar, Parameswar

2011-03-01

ZnO nanorods grown by hydrothermal technique are of great interest for potential applications in photovoltaic and optoelectronic devices. In this study we investigate the optimization of the optical absorption properties by a low temperature, chemical bath deposition technique. Our group fabricated nanorods on indium tin oxide (ITO) substrate with precursor solution of zinc nitrate hexahydrate and hexamethylenetramine (1:1 molar ratio) at 95C for 9 hours. In order to optimize the light absorption characteristics of ZnO nanorods, CdSe/ZnS core-shell quantum dots (QDs) of various diameters were attached to the surface of ZnO nanostructures grown on ITO and gold-coated silicon substrates. Density of quantum dots was varied by controlling the number drops on the surface of the ZnO nanorods. For a 0.1 M concentration of QDs of 10 nm diameter, the PL intensity at 385 nm increased as the density of the quantum dots on ZnO nanostructures was increased. For quantum dots at 1 M concentration, the PL intensity at 385 nm increased at the beginning and then decreased at higher density. We will discuss the observed changes in PL intensity with QD concentration with ZnO-QD band structure and recombination-diffusion processes taking place at the interface.

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

DEFF Research Database (Denmark)

Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

International Nuclear Information System (INIS)

Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

Scintillation properties of quantum-dot doped styrene based plastic scintillators

International Nuclear Information System (INIS)

Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

2014-01-01

We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

Scintillation properties of quantum-dot doped styrene based plastic scintillators

Energy Technology Data Exchange (ETDEWEB)

Park, J.M.; Kim, H.J., E-mail: hongjooknu@gmail.com; Hwang, Y.S.; Kim, D.H.; Park, H.W.

2014-02-15

We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator.

Electric and Magnetic Interaction between Quantum Dots and Light

DEFF Research Database (Denmark)

Tighineanu, Petru

argue that there is ample room for improving the oscillator strength with prospects for approaching the ultra-strong-coupling regime of cavity quantum electrodynamics with optical photons. These outstanding gures of merit render interface-uctuation quantum dots excellent candidates for use in cavity...... quantum electrodynamics and quantum-information science. We investigate exciton localization in droplet-epitaxy quantum dots by conducting spectral and time-resolved measurements. We nd small excitons despite the large physical size of dropletepitaxy quantum dots, which is attributed to material inter......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...

Coherence and dephasing in self-assembled quantum dots

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

2003-01-01

We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

NARCIS (Netherlands)

Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

2010-01-01

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

Electronic properties of excited states in single InAs quantum dots

International Nuclear Information System (INIS)

Warming, Till

2009-01-01

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy (μPLE). One of the main difficulties using μPLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence (μPL) and μPLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Science.gov (United States)

Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

2011-10-01

The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

Science.gov (United States)

Liu, Weiwen

The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot

International Nuclear Information System (INIS)

Hichri, A.; Jaziri, S.

2004-01-01

We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p-d exchange interaction in diluted magnetic semiconductor (Cd 0.57 Mn 0.43 Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund-Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures

Quasibound states in graphene quantum-dot nanostructures generated by concentric potential barrier rings

International Nuclear Information System (INIS)

Jiang Zhao-Tan; Yu Cheng-Long; Dong Quan-Li

2012-01-01

We study the quasibound states in a graphene quantum-dot structure generated by the single-, double-, and triple-barrier electrostatic potentials. It is shown that the strongest quasibound states are mainly determined by the innermost barrier. Specifically, the positions of the quasibound states are determined by the barrier height, the number of the quasibound states is determined by the quantum-dot radius and the angular momentum, and the localization degree of the quasibound states is influenced by the width of the innermost barrier, as well as the outside barriers. Furthermore, according to the study on the double- and triple-barrier quantum dots, we find that an effective way to generate more quasibound states with even larger energy level spacings is to design a quantum dot defined by many concentric barriers with larger barrier-height differences. Last, we extend our results into the quantum dot of many barriers, which gives a complete picture about the formation of the quasibound states in the kind of graphene quantum dot created by many concentric potential barrier rings. (rapid communication)

Thick-shell nanocrystal quantum dots

Science.gov (United States)

Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

2011-05-03

Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

Quantum Dot/Liquid Crystal Nanocomposites in Photonic Devices

Directory of Open Access Journals (Sweden)

Andrea L. Rodarte

2015-07-01

Full Text Available Quantum dot/liquid crystal nano-composites are promising new materials for a variety of applications in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however, we need to control and stabilize nano-particle dispersion in different liquid crystal host phases and understand how the particles behave in an anisotropic fluid. An ideal system will allow for the controlled assembly of either well-defined nano-particle clusters or a uniform particle distribution. In this paper, we investigate mesogen-functionalized quantum dots for dispersion in cholesteric liquid crystal. These nanoparticles are known to assemble into dense stable packings in the nematic phase, and such structures, when localized in the liquid crystal defects, can potentially enhance the coupling between particles and a cholesteric cavity. Controlling the dispersion and assembly of quantum dots using mesogenic surface ligands, we demonstrate how resonant fluid photonic cavities can result from the co-assembly of luminescent nanoparticles in the presence of cholesteric liquid crystalline ordering.

Fast synthesize ZnO quantum dots via ultrasonic method.

Science.gov (United States)

Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-05-01

Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

Optical localization of quantum dots in tapered nanowires

DEFF Research Database (Denmark)

Østerkryger, Andreas Dyhl; Gregersen, Niels; Fons, Romain

2017-01-01

In this work we have measured the far-field emission patterns of In As quantum dots embedded in a GaAs tapered nanowire and used an open-geometry Fourier modal method for determining the radial position of the quantum dots by computing the far-field emission pattern for different quantum dot...

Quantum Dots: Proteomics characterization of the impact on biological systems

Science.gov (United States)

Pozzi-Mucelli, Stefano; Boschi, F.; Calderan, L.; Sbarbati, A.; Osculati, F.

2009-05-01

Over the past few years, Quantum Dots have been tested in most biotechnological applications that use fluorescence, including DNA array technology, immunofluorescence assays, cell and animal biology. Quantum Dots tend to be brighter than conventional dyes, because of the compounded effects of extinction coefficients that are an order of magnitude larger than those of most dyes. Their main advantage resides in their resistance to bleaching over long periods of time (minutes to hours), allowing the acquisition of images that are crisp and well contrasted. This increased photostability is especially useful for three-dimensional (3D) optical sectioning, where a major issue is bleaching of fluorophores during acquisition of successive z-sections, which compromises the correct reconstruction of 3D structures. The long-term stability and brightness of Quantum Dots make them ideal candidates also for live animal targeting and imaging. The vast majority of the papers published to date have shown no relevant effects on cells viability at the concentration used for imaging applications; higher concentrations, however, caused some issues on embryonic development. Adverse effects are due to be caused by the release of cadmium, as surface PEGylation of the Quantum Dots reduces these issues. A recently published paper shows evidences of an epigenetic effect of Quantum Dots treatment, with general histones hypoacetylation, and a translocation to the nucleus of p53. In this study, mice treated with Quantum Dots for imaging purposes were analyzed to investigate the impact on protein expression and networking. Differential mono-and bidimensional electrophoresis assays were performed, with the individuation of differentially expressed proteins after intravenous injection and imaging analysis; further, as several authors indicate an increase in reactive oxygen species as a possible mean of damage due to the Quantum Dots treatment, we investigated the signalling pathway of APE1/Ref1, a

Quantum Dots: Proteomics characterization of the impact on biological systems

International Nuclear Information System (INIS)

Pozzi-Mucelli, Stefano; Osculati, F; Boschi, F; Calderan, L; Sbarbati, A

2009-01-01

Over the past few years, Quantum Dots have been tested in most biotechnological applications that use fluorescence, including DNA array technology, immunofluorescence assays, cell and animal biology. Quantum Dots tend to be brighter than conventional dyes, because of the compounded effects of extinction coefficients that are an order of magnitude larger than those of most dyes. Their main advantage resides in their resistance to bleaching over long periods of time (minutes to hours), allowing the acquisition of images that are crisp and well contrasted. This increased photostability is especially useful for three-dimensional (3D) optical sectioning, where a major issue is bleaching of fluorophores during acquisition of successive z-sections, which compromises the correct reconstruction of 3D structures. The long-term stability and brightness of Quantum Dots make them ideal candidates also for live animal targeting and imaging. The vast majority of the papers published to date have shown no relevant effects on cells viability at the concentration used for imaging applications; higher concentrations, however, caused some issues on embryonic development. Adverse effects are due to be caused by the release of cadmium, as surface PEGylation of the Quantum Dots reduces these issues. A recently published paper shows evidences of an epigenetic effect of Quantum Dots treatment, with general histones hypoacetylation, and a translocation to the nucleus of p53. In this study, mice treated with Quantum Dots for imaging purposes were analyzed to investigate the impact on protein expression and networking. Differential mono-and bidimensional electrophoresis assays were performed, with the individuation of differentially expressed proteins after intravenous injection and imaging analysis; further, as several authors indicate an increase in reactive oxygen species as a possible mean of damage due to the Quantum Dots treatment, we investigated the signalling pathway of APE1/Ref1, a

Detection of CdSe quantum dot photoluminescence for security label on paper

Energy Technology Data Exchange (ETDEWEB)

Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

2016-02-08

CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

Semiconductor Quantum Dots with Photoresponsive Ligands.

Science.gov (United States)

Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

2016-10-01

Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

Excitonic quantum interference in a quantum dot chain with rings.

Science.gov (United States)

Hong, Suc-Kyoung; Nam, Seog Woo; Yeon, Kyu-Hwang

2008-04-16

We demonstrate excitonic quantum interference in a closely spaced quantum dot chain with nanorings. In the resonant dipole-dipole interaction model with direct diagonalization method, we have found a peculiar feature that the excitation of specified quantum dots in the chain is completely inhibited, depending on the orientational configuration of the transition dipole moments and specified initial preparation of the excitation. In practice, these excited states facilitating quantum interference can provide a conceptual basis for quantum interference devices of excitonic hopping.

Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules

International Nuclear Information System (INIS)

Dong Ping; Yang Ming; Cao Zhuoliang

2008-01-01

In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system

Exciton in type-II quantum dot

Energy Technology Data Exchange (ETDEWEB)

Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)

2009-05-01

We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.

Optical transition pathways in type-II Ga(As)Sb quantum dots

International Nuclear Information System (INIS)

Gradkowski, Kamil; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Khoshakhlagh, Arezou; Balakrishnan, Ganesh; O'Reilly, Eoin P.; Huyet, Guillaume; Dawson, Larry R.; Huffaker, Diana L.

2009-01-01

We present results of room temperature photoreflectance (PR) and photoluminescence (PL) measurements of molecular-beam epitaxy (MBE)-grown GaAsSb/GaAs quantum dot structures: one with an In 0.14 Ga 0.86 As capping quantum well and one without it. PL was used to determine the structures' ground-state transition energies. This result was employed in an 8-band k.p Hamiltonian to achieve a band structure of the structures, which have different electron confinement. The dot emission energies suggest a large amount of As incorporation into the dots, which is due to enhanced adatom mixing at a higher than normal growth temperature of 510 deg. C. Our calculations indicate a dot composition of 25-50% Sb gives the best fit to experiment. This uncertainty in composition arises due to the fact that different bowing parameters of the ternary alloy could be applied in the calculations. The theoretical analysis accounts well for the main feature in the PR spectra of both samples

Controllability of multi-partite quantum systems and selective excitation of quantum dots

International Nuclear Information System (INIS)

Schirmer, S G; Pullen, I C H; Solomon, A I

2005-01-01

We consider the degrees of controllability of multi-partite quantum systems, as well as necessary and sufficient criteria for each case. The results are applied to the problem of simultaneous control of an ensemble of quantum dots with a single laser pulse. Finally, we apply optimal control techniques to demonstrate selective excitation of individual dots for a simultaneously controllable ensemble of quantum dots

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

NARCIS (Netherlands)

Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

2004-01-01

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

The effect of near laterally and vertically neighboring quantum dots on the composition of uncapped InxGa1−xAs/GaAs quantum dots

International Nuclear Information System (INIS)

Donglin, Wang; Zhongyuan, Yu; Yumin, Liu; Han, Ye; Pengfei, Lu; Xiaotao, Guo; Long, Zhao; Xia, Xin

2010-01-01

The composition of quantum dots has a direct effect on the optical and electronic properties of quantum-dot-based devices. In this paper, we combine the method of moving asymptotes and finite element tools to compute the composition distribution by minimizing the Gibbs free energy of quantum dots, and use this method to study the effect of near laterally and vertically neighboring quantum dots on the composition distribution. The simulation results indicate that the effect from the laterally neighboring quantum dot is very small, and the vertically neighboring quantum dot can significantly influence the composition by the coupled strain field

Carrier transfer in vertically stacked quantum ring-quantum dot chains

Energy Technology Data Exchange (ETDEWEB)

Mazur, Yu. I., E-mail: ymazur@uark.edu; Dorogan, V. G.; Benamara, M.; Salamo, G. J. [Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Lopes-Oliveira, V.; Lopez-Richard, V.; Teodoro, M. D.; Marques, G. E. [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Souza, L. D. de [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Wu, J.; Wang, Z. M. [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Tarasov, G. G. [Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028 (Ukraine); Marega, E. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13.566-590 São Carlos, São Paulo (Brazil)

2015-04-21

The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

Joint Mapping of Mobility and Trap Density in Colloidal Quantum Dot Solids

KAUST Repository

Stadler, Philipp

2013-07-23

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated with varying solvents and ligands. In an analysis complementary to the mobility trends commonly extracted from field-effect transistor studies, we focus instead on the subthreshold regime and map out the density of trap states in these nanocrystal films. The findings point to the importance of comprehensively mapping the electronic band- and gap-structure within real quantum solids, and they suggest a new focus in investigating quantum dot solids with an aim toward improving optoelectronic device performance. © 2013 American Chemical Society.

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

KAUST Repository

Elafandy, Rami T.

2011-12-01

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

Aptamer-conjugated dendrimer-modified quantum dots for glioblastoma cells imaging

International Nuclear Information System (INIS)

Li Zhiming; Huang Peng; He Rong; Bao Chenchen; Cui Daxiang; Zhang Xiaomin; Ren Qiushi

2009-01-01

Targeted quantum dots have shown potential as a platform for development of cancer imaging. Aptamers have recently been demonstrated as ideal candidates for molecular targeting applications. In present work, polyamidoamine dendrimers were used to modify surface of quantum dots and improve their solubility in water solution. Then, dendrimer-modified quantum dots were conjugated with DNA aptamer, GBI-10, can recognize the extracellular matrix protein tenascin-C on the surface of human glioblastoma cells. The dendrimer-modified quantum dots exhibit water-soluble, high quantum yield, and good biocompatibility. Aptamer-conjugated quantum dots can specifically target U251 human glioblastoma cells. High-performance aptamer-conjugated dendrimers modified quantum dot-based nanoprobes have great potential in application such as cancer imaging.

Quantum Dot Nanobioelectronics and Selective Antimicrobial Redox Interventions

Science.gov (United States)

Goodman, Samuel Martin

The unique properties of nanomaterials have engendered a great deal of interest in applying them for applications ranging from solid state physics to bio-imaging. One class of nanomaterials, known collectively as quantum dots, are defined as semiconducting crystals which have a characteristic dimension smaller than the excitonic radius of the bulk material which leads to quantum confinement effects. In this size regime, excited charge carriers behave like prototypical particles in a box, with their energy levels defined by the dimensions of the constituent particle. This is the source of the tunable optical properties which have drawn a great deal of attention with regards to finding appropriate applications for these materials. This dissertation is divided into multiple sections grouped by the type of application explored. The first sectoin investigates the energetic interactions of physically-coupled quantum dots and DNA, with the goal of gaining insight into how self-assembled molecular wires can bridge the energetic states of physically separated nanocrystals. Chapter 1 begins with an introduction to the properties of quantum dots, the conductive properties of DNA, and the common characterization methods used to characterize materials on the nanoscale. In Chapter 2 scanning tunneling measurements of QD-DNA constructs on the single particle level are presented which show the tunable coupling between the two materials and their resulting hybrid electronic structure. This is expanded upon in Chapter 3 where the conduction of photogenerated charges in QD-DNA hybrid thin films are characterized, which exhibit different charge transfer pathways through the constituent nucleobases depending on the energy of the incident light and resulting electrons. Complementary investigations of energy transfer mediated through DNA are presented in Chapter 4, with confirmation of Dexter-like transfer being facilitated through the oligonucleotides. The second section quantifies the

Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2015-01-01

A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

Double quantum dot as a minimal thermoelectric generator

OpenAIRE

Donsa, S.; Andergassen, S.; Held, K.

2014-01-01

Based on numerical renormalization group calculations, we demonstrate that experimentally realized double quantum dots constitute a minimal thermoelectric generator. In the Kondo regime, one quantum dot acts as an n-type and the other one as a p-type thermoelectric device. Properly connected the double quantum dot provides a miniature power supply utilizing the thermal energy of the environment.

Nuclear magnetic resonance on a single quantum dot and a quantum dot in a nanowire system: quantum photonics and opto-mechanical coupling

OpenAIRE

Wüst, Gunter Johannes

2015-01-01

Self-assembled semiconductor quantum dots (QD) are excellent single photon sources and possible hosts for electron spin qubits, which can be initialized, manipulated and read-out optically. The nuclear spins in nano-structured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resou...

Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates

International Nuclear Information System (INIS)

Zhao Peiji; Woolard, Dwight L.

2008-01-01

We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching 10 5 s -1 . In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots

Photoluminescence studies of single InGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

1999-01-01

Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

Advancements in the Field of Quantum Dots

Science.gov (United States)

Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

2012-08-01

Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

Optical and structural properties of ensembles of colloidal Ag2S quantum dots in gelatin

International Nuclear Information System (INIS)

Ovchinnikov, O. V.; Smirnov, M. S.; Shapiro, B. I.; Shatskikh, T. S.; Perepelitsa, A. S.; Korolev, N. V.

2015-01-01

The size dependences of the absorption and luminescence spectra of ensembles of hydrophilic colloidal Ag 2 S quantum dots produced by the sol-gel method and dispersed in gelatin are analyzed. By X-ray diffraction analysis and transmission electron microscopy, the formation of core/shell nanoparticles is detected. The characteristic feature of the nanoparticles is the formation of crystalline cores, 1.5–2.0 nm in dimensions, and shells of gelatin and its complexes with the components of synthesis. The observed slight size dependence of the position of infrared photoluminescence bands (in the range 1000–1400 nm) in the ensembles of hydrophilic colloidal Ag 2 S quantum dots is explained within the context of the model of the radiative recombination of electrons localized at structural and impurity defects with free holes

Silicon Quantum Dots with Counted Antimony Donor Implants

Energy Technology Data Exchange (ETDEWEB)

Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

2015-10-01

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

KAUST Repository

Kramer, Illan J.; Zhitomirsky, David; Bass, John D.; Rice, Philip M.; Topuria, Teya; Krupp, Leslie; Thon, Susanna M.; Ip, Alexander H.; Debnath, Ratan; Kim, Ho-Cheol; Sargent, Edward H.

2012-01-01

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

KAUST Repository

Kramer, Illan J.

2012-03-30

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin relaxation in quantum dots due to electron exchange with leads.

Science.gov (United States)

Vorontsov, A B; Vavilov, M G

2008-11-28

We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin blockade regime of double quantum dots. A single expression fits the entire current profile and describes the structure of both the conduction peaks and the suppressed ("valley") region. Extrinsic rates calculated here have to be taken into account for accurate extraction of intrinsic relaxation rates due to the spin-orbit and hyperfine spin scattering mechanisms from spin blockade measurements.

Raman study of strain in GaN/AlN quantum dot multilayered structures

Energy Technology Data Exchange (ETDEWEB)

Cros, A.; Garro, N.; Llorens, J.M.; Garcia-Cristobal, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Gogneau, N.; Monroy, E.; Daudin, B. [CEA-CNRS Group, ' ' Nanophysique et Semiconducteurs' ' , Departement de la Recherche Fondamentale sur la Matiere Condensee, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France)

2005-05-01

Raman spectroscopy has been used to investigate self-assembled stacks of GaN/AlN quantum dots with increasing number of periods. The E{sub 2H} phonon modes associated to GaN and AlN are clearly resolved with visible excitation, and their energies allow the simultaneous monitoring of the dot and barrier strain states. The compression of the quantum dots is evidenced by a shift of the E{sub 2H} phonon mode of circa 29 cm{sup -1} to higher energies with respect to its relaxed value. The strain of the AlN spacer is found to be correlated to that of the dot, with an increase in its tensile component for the samples with fewer periods and a partial relaxation for samples over 50 periods. Additionally, resonant effects of the A{sub 1}(LO) phonon mode have been investigated by tuning the excitation over a wide range in the ultra-violet region. A discussion of the strain distribution in quantum dots and spacers as a function of the number of periods is performed by means of a theoretical calculation based on the method of inclusions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

International Nuclear Information System (INIS)

Bortoleto, J R R; Zelcovit, J G; Gutierrez, H R; Bettini, J; Cotta, M A

2008-01-01

Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals

Principles of conjugating quantum dots to proteins via carbodiimide chemistry

International Nuclear Information System (INIS)

Song Fayi; Chan, Warren C W

2011-01-01

The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein–quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

Science.gov (United States)

Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

2015-06-03

Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

International Nuclear Information System (INIS)

Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

2003-01-01

We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity

Transport through a vibrating quantum dot: Polaronic effects

International Nuclear Information System (INIS)

Koch, T; Alvermann, A; Fehske, H; Loos, J; Bishop, A R

2010-01-01

We present a Green's function based treatment of the effects of electron-phonon coupling on transport through a molecular quantum dot in the quantum limit. Thereby we combine an incomplete variational Lang-Firsov approach with a perturbative calculation of the electron-phonon self energy in the framework of generalised Matsubara Green functions and a Landauer-type transport description. Calculating the ground-state energy, the dot single-particle spectral function and the linear conductance at finite carrier density, we study the low-temperature transport properties of the vibrating quantum dot sandwiched between metallic leads in the whole electron-phonon coupling strength regime. We discuss corrections to the concept of an anti-adiabatic dot polaron and show how a deformable quantum dot can act as a molecular switch.

Ordering parameters of three-dimensional ordered quantum-dot lattices determined by anomalous x-ray diffraction

International Nuclear Information System (INIS)

Lechner, R.T.; Springholz, G.; Stangl, J.; Raab, A.; Bauer, G.; Schuelli, T.U.; Holy, V.; Metzger, T.H.

2004-01-01

Three dimensional (3D) quantum dot structures can be obtained, e.g., by the growth of self-assembled quantum dot multilayers in which vertically and laterally ordered dot superstructures are formed as a result of the elastic interlayer dot interactions between the dots. This not only results in a significant narrowing of the size distribution, but different 3D interlayer correlations can be obtained by changes in the spacer thickness, as has been demonstrated for the PbSe/PbEuTe quantum dot material system. Apart from microscopic techniques, x-ray diffraction is a very powerful tool to characterize the ordering in such 3D assembled quantum dot structures. However, the analysis of the diffraction spectra is usually complicated by the weak scattering contrast between the self-assembled quantum dots and the surrounding matrix material. In the present work, we therefore employ anomalous x-ray diffraction with synchrotron radiation to drastically enhance the chemical contrast in such multilayers by tuning the wavelength close to an inner shell absorption resonance. This technique is applied to determine the ordering of differently stacked self-assembled PbSe quantum dot lattices fabricated by molecular beam epitaxy. In this case, the x-ray wavelength is tuned to the Pb M-shell at 5.1 Aato enhance the scattering contrast between the PbSe dots and the matrix material in comparison to the results obtained using conventional x-ray wavelengths around 1.5 Aa. As a result, it is shown that the lateral ordering is significantly better for 3D trigonal PbSe dot superlattices as compared to those with 3D hexagonal dot arrangement. (author)

Coherent transport through interacting quantum dots

Energy Technology Data Exchange (ETDEWEB)

Hiltscher, Bastian

2012-10-05

The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

Coherent transport through interacting quantum dots

International Nuclear Information System (INIS)

Hiltscher, Bastian

2012-01-01

The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Energy Technology Data Exchange (ETDEWEB)

Robert, C., E-mail: cedric.robert@insa.rennes.fr [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Thanh, T. Nguyen; Létoublon, A.; Perrin, M.; Cornet, C.; Levallois, C.; Jancu, J.M.; Even, J. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France); Balocchi, A.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France); Durand, O.; Le Corre, A. [Université Européenne de Bretagne, INSA Rennes (France); CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes 35708 Rennes (France)

2013-08-31

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments. - Highlights: ► An active zone is proposed for a pseudomorphic laser structure on Si. ► Cladding layers are proposed for a pseudomorphic laser structure on Si. ► The AlGaP alloy is studied by X-ray diffraction and spectroscopic ellipsometry. ► InGaAs/GaP quantum dots are studied by scanning tunnelling microscopy. ► InGaAs/GaP quantum dots are studied by time-resolved photoluminescence.

Spectroscopy of Charged Quantum Dot Molecules

Science.gov (United States)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

2006-03-01

Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

Science.gov (United States)

Ghali, Mohsen; Ohtani, Keita; Ohno, Yuzo; Ohno, Hideo

2012-02-07

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction

Science.gov (United States)

Chamoli, Tanuj; Ajay

2018-05-01

The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.

Transport through overlapping states in quantum dots and double dot molecules

International Nuclear Information System (INIS)

Berkovits, R.

2006-01-01

Full Text: We shall review the transport properties of interacting quantum dots with overlapping orbitals for which the orthodox Coulomb blockade picture no longer holds. We shall concentrate on he conductance through a serial double dot structure for which the inter-dot tunneling is stronger than the tunneling to the leads. When the dots are occupied by 1 or 3 electrons the usual Kondo peak is observed. For the case in which 2 electrons occupy the molecule a singlet is formed. Nevertheless, the conductance in that case has a constant non-zero value, and might even be equal to the maximum conductance of 2e 2 /h for certain values of the molecule parameters. We show that this is the result of the subtle interplay between the symmetric and anti-symmetric orbitals of the molecule caused by interactions and interference

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

International Nuclear Information System (INIS)

Guang-Hua, Tang; Bo, Xu; Li-Wen, Jiang; Jin-Xia, Kong; Ning, Kong; De-Chun, Liang; Ping, Liang; Xiao-Ling, Ye; Peng, Jin; Feng-Qi, Liu; Yong-Hai, Chen; Zhan-Guo, Wang

2010-01-01

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78K, a clear spectral response in the range of 2–7 μm has been obtained with peaks at 3.1, 4.8 and 5.7 μm. The bandgap energies of GaAs and Alo.2Gao.sAs at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure

Interaction of porphyrins with CdTe quantum dots

International Nuclear Information System (INIS)

Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

2011-01-01

Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots

Directory of Open Access Journals (Sweden)

Altaisky Mikhail V.

2016-01-01

Full Text Available We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Stobbe, Søren; Schneider, C.

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

Ferritin-Templated Quantum-Dots for Quantum Logic Gates

Science.gov (United States)

Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

2005-01-01

Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

Fabrication and optical properties of type-II InP/InAs nanowire/quantum-dot heterostructures

Energy Technology Data Exchange (ETDEWEB)

Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Li, Bang; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 (China)

2016-02-15

The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski-Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube-root dependence on the excitation power is observed, suggesting a type-II band alignment. The peak position of dots initially red-shifts and then blue-shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A 2x2 quantum dot array with controllable inter-dot tunnel couplings

OpenAIRE

Mukhopadhyay, Uditendu; Dehollain, Juan Pablo; Reichl, Christian; Wegscheider, Werner; Vandersypen, Lieven M. K.

2018-01-01

The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$\\times$2 quantum dots defined electrostatically in a AlGaA...

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

Energy Technology Data Exchange (ETDEWEB)

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; Austing, D. G.; Lu, Tzu-Ming; Luhman, Dwight; Bethke, Donald Thomas; Wanke, Michael; Lilly, Michael; Carroll, Malcolm S.; Sachrajda, A. S.

2017-12-01

We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.

Quantum-coherence-assisted tunable on- and off-resonance tunneling through a quantum-dot-molecule dielectric film

International Nuclear Information System (INIS)

Shen Jianqi; Zeng Ruixi

2017-01-01

Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates. (author)

Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

International Nuclear Information System (INIS)

Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

2008-01-01

The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

Array of nanoparticles coupling with quantum-dot: Lattice plasmon quantum features

Science.gov (United States)

Salmanogli, Ahmad; Gecim, H. Selcuk

2018-06-01

In this study, we analyze the interaction of lattice plasmon with quantum-dot in order to mainly examine the quantum features of the lattice plasmon containing the photonic/plasmonic properties. Despite optical properties of the localized plasmon, the lattice plasmon severely depends on the array geometry, which may influence its quantum features such as uncertainty and the second-order correlation function. To investigate this interaction, we consider a closed system containing an array of the plasmonic nanoparticles and quantum-dot. We analyze this system with full quantum theory by which the array electric far field is quantized and the strength coupling of the quantum-dot array is analytically calculated. Moreover, the system's dynamics are evaluated and studied via the Heisenberg-Langevin equations to attain the system optical modes. We also analytically examine the Purcell factor, which shows the effect of the lattice plasmon on the quantum-dot spontaneous emission. Finally, the lattice plasmon uncertainty and its time evolution of the second-order correlation function at different spatial points are examined. These parameters are dramatically affected by the retarded field effect of the array nanoparticles. We found a severe quantum fluctuation at points where the lattice plasmon occurs, suggesting that the lattice plasmon photons are correlated.

Tuning Single Quantum Dot Emission with a Micromirror.

Science.gov (United States)

Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

2018-02-14

The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

Science.gov (United States)

Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

2018-03-01

We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods

NARCIS (Netherlands)

Li, L.; Patriarche, G.; Chauvin, N.J.G.; Ridha, P.; Rossetti, M.; Andrzejewski, J.; Sek, G.; Misiewicz, J.; Fiore, A.

2008-01-01

We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrate. They were formed by depositing a

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Transport properties of a Kondo dot with a larger side-coupled noninteracting quantum dot

International Nuclear Information System (INIS)

Liu, Y S; Fan, X H; Xia, Y J; Yang, X F

2008-01-01

We investigate theoretically linear and nonlinear quantum transport through a smaller quantum dot in a Kondo regime connected to two leads in the presence of a larger side-coupled noninteracting quantum dot, without tunneling coupling to the leads. To do this we employ the slave boson mean field theory with the help of the Keldysh Green's function at zero temperature. The numerical results show that the Kondo conductance peak may develop multiple resonance peaks and multiple zero points in the conductance spectrum owing to constructive and destructive quantum interference effects when the energy levels of the large side-coupled noninteracting dot are located in the vicinity of the Fermi level in the leads. As the coupling strength between two quantum dots increases, the tunneling current through the quantum device as a function of gate voltage applied across the two leads is suppressed. The spin-dependent transport properties of two parallel coupled quantum dots connected to two ferromagnetic leads are also investigated. The numerical results show that, for the parallel configuration, the spin current or linear spin differential conductance are enhanced when the polarization strength in the two leads is increased

Coherent radiation by quantum dots and magnetic nanoclusters

International Nuclear Information System (INIS)

Yukalov, V. I.; Yukalova, E. P.

2014-01-01

The assemblies of either quantum dots or magnetic nanoclusters are studied. It is shown that such assemblies can produce coherent radiation. A method is developed for solving the systems of nonlinear equations describing the dynamics of such assemblies. The method is shown to be general and applicable to systems of different physical nature. Despite mathematical similarities of dynamical equations, the physics of the processes for quantum dots and magnetic nanoclusters is rather different. In a quantum dot assembly, coherence develops due to the Dicke effect of dot interactions through the common radiation field. For a system of magnetic clusters, coherence in the spin motion appears due to the Purcell effect caused by the feedback action of a resonator. Self-organized coherent spin radiation cannot arise without a resonator. This principal difference is connected with the different physical nature of dipole forces between the objects. Effective dipole interactions between the radiating quantum dots, appearing due to photon exchange, collectivize the dot radiation. While the dipolar spin interactions exist from the beginning, yet before radiation, and on the contrary, they dephase spin motion, thus destroying the coherence of moving spins. In addition, quantum dot radiation exhibits turbulent photon filamentation that is absent for radiating spins

Correlated Coulomb Drag in Capacitively Coupled Quantum-Dot Structures.

Science.gov (United States)

Kaasbjerg, Kristen; Jauho, Antti-Pekka

2016-05-13

We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs)-a bias-driven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach that accounts for higher-order tunneling (cotunneling) processes as well as energy-dependent lead couplings, and identify a mesoscopic Coulomb drag mechanism driven by nonlocal multielectron cotunneling processes. Our theory establishes the conditions for a nonzero drag as well as the direction of the drag current in terms of microscopic system parameters. Interestingly, the direction of the drag current is not determined by the drive current, but by an interplay between the energy-dependent lead couplings. Studying the drag mechanism in a graphene-based CQD heterostructure, we show that the predictions of our theory are consistent with recent experiments on Coulomb drag in CQD systems.

Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots

Science.gov (United States)

Sharma, Akant Sagar; Dhar, S.

2018-02-01

The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.

Shape, strain, and ordering of lateral InAs quantum dot molecules

International Nuclear Information System (INIS)

Krause, B.; Metzger, T.H.; Rastelli, A.; Songmuang, R.; Kiravittaya, S.; Schmidt, O. G.

2005-01-01

The results of an x-ray study on freestanding, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy are presented. The studied samples cover the range from statistically distributed single quantum dots to quantum dot bimolecules, and finally to quantum dot quadmolecules. The x-ray diffraction data of the single quantum dots and the bimolecules, obtained in grazing incidence geometry, have been analyzed using the isostrain model. An extended version of the isostrain model has been developed, including the lateral arrangement of the quantum dots within a quantum dot molecule and the superposition of the scattering from different parts of the dots. This model has been applied to the scattering maps of all three samples. Quantitative information about the positions of the dots, the shape, and the lattice parameter distribution of their crystalline core has been obtained. For the single dot and the bimolecule, a strong similarity of the shape and lattice parameter distribution has been found, in agreement with the similarity of their photoluminescence spectra

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

Science.gov (United States)

Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

2017-11-01

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

Effects of quantum confinement and shape on band gap of core/shell quantum dots and nanowires

Science.gov (United States)

Gao, Faming

2011-05-01

A quantum confinement model for nanocrystals developed is extended to study for the optical gap shifts in core/shell quantum dots and nanowires. The chemical bond properties and gap shifts in the InP/ZnS, CdSe/CdS, CdSe/ZnS, and CdTe/ZnS core/shell quantum dots are calculated in detail. The calculated band gaps are in excellent agreement with experimental values. The effects of structural taping and twinning on quantum confinement of InP and Si nanowires are elucidated. It is found theoretically that a competition between the positive Kubo energy-gap shift and the negative surface energy shift plays the crucial role in the optical gaps of these nanosystems.

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Energy Technology Data Exchange (ETDEWEB)

Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Konstanz, Konstanz 78457 (Germany); Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2015-04-27

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

Science.gov (United States)

Pathak, Smita

Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

International Nuclear Information System (INIS)

Niederbracht, H; Hargart, F; Schwartz, M; Koroknay, E; Kessler, C A; Jetter, M; Michler, P

2015-01-01

Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure. (paper)

Exciton dephasing in single InGaAs quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

2000-01-01

The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

Optical Spectroscopy Of Charged Quantum Dot Molecules

Science.gov (United States)

Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2007-04-01

Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

Optical and structural properties of ensembles of colloidal Ag{sub 2}S quantum dots in gelatin

Energy Technology Data Exchange (ETDEWEB)

Ovchinnikov, O. V., E-mail: Ovchinnikov-O-V@rambler.ru; Smirnov, M. S. [Voronezh State University (Russian Federation); Shapiro, B. I. [Moscow State University of Fine Chemical Technologies (Russian Federation); Shatskikh, T. S.; Perepelitsa, A. S.; Korolev, N. V. [Voronezh State University (Russian Federation)

2015-03-15

The size dependences of the absorption and luminescence spectra of ensembles of hydrophilic colloidal Ag{sub 2}S quantum dots produced by the sol-gel method and dispersed in gelatin are analyzed. By X-ray diffraction analysis and transmission electron microscopy, the formation of core/shell nanoparticles is detected. The characteristic feature of the nanoparticles is the formation of crystalline cores, 1.5–2.0 nm in dimensions, and shells of gelatin and its complexes with the components of synthesis. The observed slight size dependence of the position of infrared photoluminescence bands (in the range 1000–1400 nm) in the ensembles of hydrophilic colloidal Ag{sub 2}S quantum dots is explained within the context of the model of the radiative recombination of electrons localized at structural and impurity defects with free holes.

Strong-coupling polaron effect in quantum dots

International Nuclear Information System (INIS)

Zhu Kadi; Gu Shiwei

1993-11-01

Strong-coupling polaron in a parabolic quantum dot is investigated by the Landau-Pekar variational treatment. The polaron binding energy and the average number of virtual phonons around the electron as a function of the effective confinement length of the quantum dot are obtained in Gaussian function approximation. It is shown that both the polaron binding energy and the average number of virtual phonons around the electron decrease by increasing the effective confinement length. The results indicate that the polaronic effects are more pronounced in quantum dots than those in two-dimensional and three-dimensional cases. (author). 15 refs, 4 figs

Second-harmonic imaging of semiconductor quantum dots

DEFF Research Database (Denmark)

Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

2000-01-01

Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...

Quantum dot molecules

CERN Document Server

Wu, Jiang

2014-01-01

This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

Science.gov (United States)

2011-01-01

Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

Four-Wave Mixing Spectroscopy of Quantum Dot Molecules

Science.gov (United States)

Sitek, A.; Machnikowski, P.

2007-08-01

We study theoretically the nonlinear four-wave mixing response of an ensemble of coupled pairs of quantum dots (quantum dot molecules). We discuss the shape of the echo signal depending on the parameters of the ensemble: the statistics of transition energies and the degree of size correlations between the dots forming the molecules.

Carbon quantum dots and a method of making the same

Science.gov (United States)

Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

2017-08-22

The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

Nonadiabatic geometrical quantum gates in semiconductor quantum dots

International Nuclear Information System (INIS)

Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto

2003-01-01

In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented

Capture, relaxation and recombination in quantum dots

NARCIS (Netherlands)

Sreenivasan, D.

2008-01-01

Quantum dots (QDs) have attracted a lot of interest both from application and fundamental physics point of view. A semiconductor quantum dot features discrete atomiclike energy levels, despite the fact that it contains many atoms within its surroundings. The discrete energy levels give rise to very

Complementary information on CdSe/ZnSe quantum dot local structure from extended X-ray absorption fine structure and diffraction anomalous fine structure measurements

International Nuclear Information System (INIS)

Piskorska-Hommel, E.; Holý, V.; Caha, O.; Wolska, A.; Gust, A.; Kruse, C.; Kröncke, H.; Falta, J.; Hommel, D.

2012-01-01

The extended X-ray absorption fine structure (EXAFS) and diffraction anomalous fine structure (DAFS) have been applied to investigate a local structure for the CdSe/ZnSe quantum dots grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE). The aim was to study the intermixing of Cd and Zn atoms, chemical compositions and strain induced by cap-layer. The EXAFS at the Cd K-edge and DAFS at the Se K-edge proved the intermixing of Cd and Zn atoms. The distances Cd–Se (2.61 Å) found from EXAFS and DAFS analysis for h 1 region is closer to that in bulk CdSe (2.62 Å). The DAFS analysis revealed the differences in the local structure in two investigated regions (i.e. different iso-strain volumes) on the quantum dots. It was found that the investigated areas differ in the Cd concentration. To explain the experimental results the theoretical calculation based on a full valence-force field (VFF) model was performed. The theoretical VFF model fully explains the experimental data.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Science.gov (United States)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

Bound states in continuum: Quantum dots in a quantum well

Energy Technology Data Exchange (ETDEWEB)

Prodanović, Nikola, E-mail: elnpr@leeds.ac.uk [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Ikonić, Zoran; Indjin, Dragan; Harrison, Paul [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom)

2013-11-01

We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.

Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Schneider, C.; Stobbe, Søren

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

Carrier-phonon interaction in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seebeck, Jan

2009-03-10

In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

Space charge spectroscopy of self assembled Ge quantum dots in Si

Energy Technology Data Exchange (ETDEWEB)

Asperger, T.; Miesner, C.; Brunner, K.; Abstreiter, G. [Technische Univ. Muenchen, Garching (Germany). Walter-Schottky-Inst. fuer Physikalische Grundlagen der Halbleiterelektronik

2001-03-01

Admittance spectroscopy was used to investigate the density of states in self assembled Ge quantum dots (QDs) of different size embedded in Si Schottky diodes. From the admittance results, activation energies of hole in the QDs have been determined as a function of the external bias which shifts the Fermi level with respect to the energy states in the QDs. The activation energy of a quantum well sample remains constant up to 6 V bias voltage. Large Ge dots (70 nm diameter) show a continuum of activation energies and a low continuous averaged density of states. In small Ge dots (20 nm diameter) a discrete energy level structure with level separations of 40 to 4 meV are observed. They are attributed to strongly quantum confined hole states with significant Coulomb blockade energies. (orig.)

Nonadiabatic corrections to a quantum dot quantum computer

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 83; Issue 1. Nonadiabatic corrections to a quantum dot quantum computer working in adiabatic limit. M Ávila ... The time of operation of an adiabatic quantum computer must be less than the decoherence time, otherwise the computer would be nonoperative. So far, the ...

Graphene quantum dots probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

2017-11-15

Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots

International Nuclear Information System (INIS)

Zhi-Bing, Wang; Hui-Chao, Zhang; Jia-Yu, Zhang; Su, Huaipeng; Wang, Y. Andrew

2010-01-01

The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots (QDs), makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions are changed under external electric fields. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Atomically manufactured nickel-silicon quantum dots displaying robust resonant tunneling and negative differential resistance

Science.gov (United States)

Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.

2017-12-01

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.

Realization of electrically tunable single quantum dot nanocavities

Energy Technology Data Exchange (ETDEWEB)

Hofbauer, Felix Florian Georg

2009-03-15

We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

OpenAIRE

Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Badescu, S. C.; Lyanda-Geller, Y.; Reinecke, T. L.

2005-01-01

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of qua...

Fermionic entanglement via quantum walks in quantum dots

Science.gov (United States)

Melnikov, Alexey A.; Fedichkin, Leonid E.

2018-02-01

Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.

Growth and photovoltaic performance of SnS quantum dots

Energy Technology Data Exchange (ETDEWEB)

Deepa, K.G., E-mail: deepachaithanya@gmail.com [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore (India); Nagaraju, J. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore (India)

2012-08-01

Highlights: Black-Right-Pointing-Pointer Orthorhombic SnS quantum dots are synthesized by chemical method. Black-Right-Pointing-Pointer HOMO-LUMO level alignments confirmed the electron transport from SnS to TiO{sub 2}. Black-Right-Pointing-Pointer Cell characteristics are analyzed with different size quantum dots. Black-Right-Pointing-Pointer FF increased drastically from 15 to 51% on adding a buffer layer to the structure. Black-Right-Pointing-Pointer The SnS QDSSC showed highest V{sub oc} of 504 mV and 2.3 mA/cm{sup 2}. - Abstract: Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn{sub 2}S{sub 3} and SnS{sub 2} which is visible in the SAED pattern. From the electrochemical characterization, HOMO-LUMO levels of both TiO{sub 2} and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO{sub 2}. Moreover, the HOMO-LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO{sub 2} thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO{sub 2}. Without the buffer layer, cell showed an open circuit voltage (V{sub oc}) of 504 mV and short circuit current density (J{sub sc}) of 2.3 mA/cm{sup 2} under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots.

Enhanced intratumoral uptake of quantum dots concealed within hydrogel nanoparticles

International Nuclear Information System (INIS)

Nair, Ashwin; Shen Jinhui; Thevenot, Paul; Zou Ling; Tang Liping; Cai Tong; Hu Zhibing

2008-01-01

Effective nanomedical devices for tumor imaging and drug delivery are not yet available. In an attempt to construct a more functional device for tumor imaging, we have embedded quantum dots (which have poor circulatory behavior) within hydrogel nanoparticles made of poly-N-isopropylacrylamide. We found that the hydrogel encapsulated quantum dots are more readily taken up by cultured tumor cells. Furthermore, in a melanoma model, hydrogel encapsulated quantum dots also preferentially accumulate in the tumor tissue compared with normal tissue and have ∼16-fold greater intratumoral uptake compared to non-derivatized quantum dots. Our results suggest that these derivatized quantum dots, which have greatly improved tumor localization, may enhance cancer monitoring and chemotherapy.

Wave function analysis of type-II self-assembled quantum dot structures using magneto-optics

International Nuclear Information System (INIS)

Godoy, Marcio Peron Franco de; Nakaema, Marcelo K.K.; Gomes, Paulo F.; Iikawa, Fernando; Brasil, Maria Jose S.P.; Bortoleto, Jose Roberto R.; Cotta, Monica A.; Ribeiro, Evaldo; Medeiros-Ribeiro, Gilberto; Marques, Gilmar E.; Bittencourt, A.C.R.

2004-01-01

Full text: Recently, self-assembled quantum dots have attracted considerable attention for their potential for device applications. Type II interface, in particular, present interesting properties due to the space separation of the carriers. One of the carriers is confined at the lower band gap layer and the other remains at the barrier layers and is only localized by the Coulomb attraction. An essential information for using type II quantum wells and quantum dots on technological applications is the localization of the carrier wave function, which is an experimentally difficult parameter to be measured. Some techniques have been proposed to map the wave functions in quantum dots such as magneto-tunneling spectroscopy and near- field scanning optical microscopy. These techniques involve however a very complex experimental apparatus and sample processing. The magneto-exciton transition can be used as an alternative tool to investigate the exciton wave function distribution, since this distribution has a strong influence on the diamagnetic shift and Zeeman splitting. In this work, we present magneto-optical studies of In P/GaAs type II self-assembled quantum dots, where the electron is strongly confined at the In P, while the hole is weakly localized at the GaAs barrier due to the Coulombic attraction from the electrons. This scenery is very distinct from type I systems. The weaker hole confinement should alter the valence band mixing resulting in a different valence band contribution on the Zeeman splitting as compared to type I systems. Based on the results of the magneto-exciton emission from the wetting layer and from the individual dots, we obtained interesting results concerning the wave function distribution in our system. We discuss the localization of the hole wave function along the growth direction based on the measured Zeeman splitting and the in-plane wave function distribution, based on the observed diamagnetic shift. A remarkable result is that the

Synthesis and Characterization of Mercaptoacetic Acid Capped Cadmium Sulphide Quantum Dots.

Science.gov (United States)

Wageh, S; Maize, Mai; Donia, A M; Al-Ghamdi, Ahmed A; Umar, Ahmad

2015-12-01

This paper reports the facile synthesis and detailed characterization of mercaptoacetic acid capped cadmium sulphide (CdS) quantum dots using various cadmium precursors. The mercaptoacetic acid capped CdS quantum dots were prepared by facile and simple wet chemical method and characterized by several techniques such as energy dispersive spectroscopy (EDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV-vis. spectroscopy, photoluminescence spectroscopy, high-resolution transmission microscopy (HRTEM) and thremogravimetric analysis. The EDS studies revealed that the prepared quantum dots possess higher atomic percentage of sulfur compared to cadmium due to the coordination of thiolate to the quantum dots surfaces. The X-ray and absorption analyses exhibited that the size of quantum dots prepared by cadmium acetate is larger than the quantum dots prepared by cadmium chloride and cadmium nitrate. The increase in size can be attributed to the low stability constant of cadmium acetate in comparison with cadmium chloride and cadmium nitrate. The FTIR and thermogravimetric analysis showed that the nature of capping molecule on the surface of quantum dots are different depending on the cadmium precursors which affect the emission from CdS quantum dots. Photoemission spectroscopy revealed that the emission of quantum dots prepared by cadmium acetate has high intensity band edge emission along with low intensity trapping state emission. However the CdS quantum dots prepared by cadmium chloride and cadmium nitrate produced only trapping state emissions.

Using a quantum dot system to realize perfect state transfer

International Nuclear Information System (INIS)

Li Ji; Wu Shi-Hai; Zhang Wen-Wen; Xi Xiao-Qiang

2011-01-01

There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler—London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST. (general)

Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

International Nuclear Information System (INIS)

Nozawa, Tomohiro; Arakawa, Yasuhiko

2014-01-01

The intraband transitions which are essential for quantum dot intermediate band solar cells (QD IBSCs) are theoretically investigated by estimating the matrix elements from a ground bound state, which is often regarded as an intermediate band (IB), to conduction band (CB) states for a structure with a quantum dot (QD) embedded in a matrix (a QD/matrix structure). We have found that the QD pushes away the electron envelope functions (probability densities) from the QD region in almost all quantum states above the matrix CB minimum. As a result, the matrix elements of the intraband transitions in the QD/matrix structure are largely reduced, compared to those calculated assuming the envelope functions of free electrons (i.e., plane-wave envelope functions) in a matrix structure as the final states of the intraband transitions. The result indicates the strong influence of the QD itself on the intraband transitions from the IB to the CB states in QD IBSC devices. This work will help in better understanding the problem of the intraband transitions and give new insight, that is, engineering of quantum states is indispensable for the realization of QD IBSCs with high solar energy conversion efficiencies. (paper)

3D super-resolution imaging with blinking quantum dots

Science.gov (United States)

Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

2013-01-01

Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

Electroluminescent Cu-doped CdS quantum dots

NARCIS (Netherlands)

Stouwdam, J.W.; Janssen, R.A.J.

2009-01-01

Incorporating Cu-doped CdS quantum dots into a polymer host produces efficient light-emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the

Optical transitions and nature of Stokes shift in spherical CdS quantum dots

OpenAIRE

Demchenko, D. O.; Wang, Lin-Wang

2006-01-01

We study the structure of the energy spectra along with the character of the states participating in optical transitions in colloidal CdS quantum dots (QDs) using the {\\sl ab initio} accuracy charge patching method combined with the %pseudopotential based folded spectrum calculations of electronic structure of thousand-atom nanostructures. In particular, attention is paid to the nature of the large resonant Stokes shift observed in CdS quantum dots. We find that the top of the valence band st...

A triple quantum dot in a single-wall carbon nanotube

DEFF Research Database (Denmark)

Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

2008-01-01

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...

Electroluminescence of colloidal ZnSe quantum dots

International Nuclear Information System (INIS)

Dey, S.C.; Nath, S.S.

2011-01-01

The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

In situ electron-beam polymerization stabilized quantum dot micelles.

Science.gov (United States)

Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

2011-04-19

A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

National Research Council Canada - National Science Library

Raymer, Michael

2003-01-01

An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

Directory of Open Access Journals (Sweden)

Ian D. Tomlinson

2007-01-01

Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.