Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys

Energy Technology Data Exchange (ETDEWEB)

Narducci, Dario; Lorenzi, Bruno [Department of Materials Science, University of Milano Bicocca, Milan (Italy); Zianni, Xanthippe [Department of Aircraft Technologies, Technological Educational Institution of Sterea Ellada, Psachna (Greece); Department of Microelectronics, IAMPPNM, NCSR Demokritos, Athens (Greece); Neophytou, Neophytos [Institute for Microelectronics, TUV, Vienna (Austria); School of Engineering, University of Warwick, Coventry (United Kingdom); Frabboni, Stefano [Department of FIM, University of Modena and Reggio Emilia, Modena (Italy); CNR-Institute of Nanoscience-S3, Modena (Italy); Gazzadi, Gian Carlo [CNR-Institute of Nanoscience-S3, Modena (Italy); Roncaglia, Alberto; Suriano, Francesco [IMM-CNR, Bologna (Italy)

2014-06-15

In previous publications it was shown that the precipitation of silicon boride around grain boundaries may lead to an increase of the power factor in nanocrystalline silicon. Such an effect was further explained by computational analyses showing that the formation of an interphase at the grain boundaries along with high boron densities can actually lead to a concurrent increase of the electrical conductivity σ and of the Seebeck coefficient S. In this communication we report recent evidence of the key elements ruling such an unexpected effect. Nanocrystalline silicon films deposited onto a variety of substrates were doped to nominal boron densities in excess of 10{sup 20} cm{sup -3} and were annealed up to 1000 C to promote boride precipitation. Thermoelectric properties were measured and compared with their microstructure. A concurrent increase of σ and S with the carrier density was found only upon formation of an interphase. Its dependency on the film microstructure and on the deposition and processing conditions will be discussed. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanocrystallinity effects on osteoblast and osteoclast response to silicon substituted hydroxyapatite.

Science.gov (United States)

Casarrubios, Laura; Matesanz, María Concepción; Sánchez-Salcedo, Sandra; Arcos, Daniel; Vallet-Regí, María; Portolés, María Teresa

2016-11-15

Silicon substituted hydroxyapatites (SiHA) are highly crystalline bioceramics treated at high temperatures (about 1200°C) which have been approved for clinical use with spinal, orthopedic, periodontal, oral and craniomaxillofacial applications. The preparation of SiHA with lower temperature methods (about 700°C) provides nanocrystalline SiHA (nano-SiHA) with enhanced bioreactivity due to higher surface area and smaller crystal size. The aim of this study has been to know the nanocrystallinity effects on the response of both osteoblasts and osteoclasts (the two main cell types involved in bone remodelling) to silicon substituted hydroxyapatite. Saos-2 osteoblasts and osteoclast-like cells (differentiated from RAW-264.7 macrophages) have been cultured on the surface of nano-SiHA and SiHA disks and different cell parameters have been evaluated: cell adhesion, proliferation, viability, intracellular content of reactive oxygen species, cell cycle phases, apoptosis, cell morphology, osteoclast-like cell differentiation and resorptive activity. This comparative in vitro study evidences that nanocrystallinity of SiHA affects the cell/biomaterial interface inducing bone cell apoptosis by loss of cell anchorage (anoikis), delaying osteoclast-like cell differentiation and decreasing the resorptive activity of this cell type. These results suggest the potential use of nano-SiHA biomaterial for preventing bone resorption in treatment of osteoporotic bone. Copyright © 2016 Elsevier Inc. All rights reserved.

Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

International Nuclear Information System (INIS)

Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

2011-01-01

Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

THz generation from a nanocrystalline silicon-based photoconductive device

International Nuclear Information System (INIS)

Daghestani, N S; Persheyev, S; Cataluna, M A; Rose, M J; Ross, G

2011-01-01

Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material

Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

International Nuclear Information System (INIS)

Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

2011-01-01

The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

Science.gov (United States)

Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

2014-03-01

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

Nanocomposites Based on Polyethylene and Nanocrystalline Silicon Films

Directory of Open Access Journals (Sweden)

Olkhov Anatoliy Aleksandrovich

2014-12-01

Full Text Available High-strength polyethylene films containing 0.5-1.0 wt. % of nanocrystalline silicon (nc-Si were synthesized. Samples of nc-Si with an average core diameter of 7-10 nm were produced by plasmochemical method and by laser-induced decomposition of monosilane. Spectral studies revealed almost complete (up to ~95 % absorption of UV radiation in 200- 400 nm spectral region by 85 micron thick film if the nc-Si content approaches to 1.0 wt. %. The density function of particle size in the starting powders and polymer films containing immobilized silicon nanocrystallites were obtained using the modeling a complete profile of X-ray diffraction patterns, assuming spherical grains and the lognormal distribution. The results of X-ray analysis shown that the crystallite size distribution function remains almost unchanged and the crystallinity of the original polymer increases to about 10 % with the implantation of the initial nc-Si samples in the polymer matrix.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Plasmonic scattering back reflector for light trapping in flat nano-crystalline silicon solar cells

NARCIS (Netherlands)

van Dijk, L.; van de Groep, J.; Veldhuizen, L.W.; Di Vece, M.; Polman, A.; Schropp, R.E.I.

2016-01-01

Most types of thin film solar cells require light management to achieve sufficient light absorptance. We demonstrate a novel process for fabricating a scattering back reflector for flat, thin film hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. This scattering back reflector consists of

Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

International Nuclear Information System (INIS)

Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.

2015-01-01

Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models

Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

Energy Technology Data Exchange (ETDEWEB)

Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

2015-08-30

Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

Science.gov (United States)

Patra, Chandralina; Das, Debajyoti

2018-04-01

Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter

Science.gov (United States)

Kihara, Takashi; Harada, Toshihiro; Kato, Masahiro; Nakano, Kiyoshi; Murakami, Osamu; Kikusui, Takefumi; Koshida, Nobuyoshi

2006-01-01

As one of the functional properties of ultrasound generator based on efficient thermal transfer at the nanocrystalline silicon (nc-Si) layer surface, its potential as an ultrasonic simulator of vocalization signals is demonstrated by using the acoustic data of mouse-pup calls. The device composed of a surface-heating thin-film electrode, an nc-Si layer, and a single-crystalline silicon (c-Si) wafer, exhibits an almost completely flat frequency response over a wide range without any mechanical surface vibration systems. It is shown that the fabricated emitter can reproduce digitally recorded ultrasonic mouse-pups vocalizations very accurately in terms of the call duration, frequency dispersion, and sound pressure level. The thermoacoustic nc-Si device provides a powerful physical means for the understanding of ultrasonic communication mechanisms in various living animals.

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

International Nuclear Information System (INIS)

Fainer, N.I.; Kosinova, M.L.; Maximovsky, E.A.; Rumyantsev, Yu.M.; Kuznetsov, F.A.; Kesler, V.G.; Kirienko, V.V.

2005-01-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO 2 and α-Si 3 N 4 . These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the α-Si 3 N 4 phase increases

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

Energy Technology Data Exchange (ETDEWEB)

Fainer, N.I. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation)]. E-mail: nadezhda@che.nsk.su; Kosinova, M.L. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Maximovsky, E.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Rumyantsev, Yu.M. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kuznetsov, F.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation); Kirienko, V.V. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation)

2005-05-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si{sub 2}NH(CH{sub 3}){sub 6} (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO{sub 2} and {alpha}-Si{sub 3}N{sub 4}. These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the {alpha}-Si{sub 3}N{sub 4} phase increases.

Nanocrystalline Sr2CeO4 thin films grown on silicon by laser ablation

International Nuclear Information System (INIS)

Perea, Nestor; Hirata, G.A.

2006-01-01

Blue-white luminescent Sr 2 CeO 4 thin films were deposited by using pulsed laser ablation (λ = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr 2 CeO 4 grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr 2 CeO 4 however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems

Influence of argon dilution on growth and properties of hydrogenated nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Parashar, A. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India); Kumar, Sushil; Gope, Jhuma; Rauthan, C.M.S.; Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Hashmi, S.A. [Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India)

2010-05-15

The effect of argon concentration (66-87%) in total gaseous mixture (SiH{sub 4}+H{sub 2}+Ar) on growth and properties of hydrogenated nanocrystalline silicon films deposited by RF (13.56 MHz) PECVD technique was investigated. Raman and XRD measurements revealed increasing argon fraction favored enhancement of crystallinity, enlargement of crystallites and relaxation of strained bonds. Photoluminescence spectra of nc-Si:H films exhibited two radiative transitions in the photon energy ranges of 2.8-3.1 eV and 1.6-2.1 eV. The high energy PL peaks are attributed to surface effect of the films whereas peaks in the range of 1.6-2.1 eV are due to nanocrystallinity in the films. Argon dilution also helped enhancement of deposition rate and conductivity of the films. A film deposited at 81% of argon fraction possesses high crystallinity (75%), conductivity in the order of 10{sup -5} ({omega} cm){sup -1}, size of the crystallite (Raman=12 nm, XRD=18 nm), and low residual stress (125 MPa). (author)

High-pressure condition of SiH{sub 4}+Ar+H{sub 2} plasma for deposition of hydrogenated nanocrystalline silicon film

Energy Technology Data Exchange (ETDEWEB)

Parashar, A.; Kumar, Sushil; Dixit, P.N.; Gope, Jhuma; Rauthan, C.M.S. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Hashmi, S.A. [Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India)

2008-10-15

The characteristics of 13.56-MHz discharged SiH{sub 4}+Ar+H{sub 2} plasma at high pressure (2-8 Torr), used for the deposition of hydrogenated nanocrystalline silicon (nc-Si:H) films in a capacitively coupled symmetric PECVD system, has been investigated. Plasma parameters such as average electron density, sheath field and bulk field are extracted from equivalent circuit model of the plasma using outputs (current, voltage and phase) of RF V-I probe under different pressure conditions. The conditions of growth in terms of plasma parameters are correlated with properties of the hydrogenated nanocrystalline silicon films characterized by Raman, AFM and dc conductivity. The film deposited at 4 Torr of pressure, where relatively low sheath/bulk field ratio is observed, exhibits high crystallinity and conductivity. The crystalline volume fraction of the films estimated from the Raman spectra is found to vary from 23% to 79%, and the trend of variation is similar to the RF real plasma impedance data. (author)

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

Energy Technology Data Exchange (ETDEWEB)

He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

2015-10-01

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films

Directory of Open Access Journals (Sweden)

Lioutas Ch

2007-01-01

Full Text Available AbstractWe have studied ultrafast carrier dynamics in nanocrystalline silicon films with thickness of a few nanometers where boundary-related states and quantum confinement play an important role. Transient non-degenerated photoinduced absorption measurements have been employed to investigate the effects of grain boundaries and quantum confinement on the relaxation dynamics of photogenerated carriers. An observed long initial rise of the photoinduced absorption for the thicker films agrees well with the existence of boundary-related states acting as fast traps. With decreasing the thickness of material, the relaxation dynamics become faster since the density of boundary-related states increases. Furthermore, probing with longer wavelengths we are able to time-resolve optical paths with faster relaxations. This fact is strongly correlated with probing in different points of the first Brillouin zone of the band structure of these materials.

Role of chlorine in the nanocrystalline silicon film formation by rf plasma-enhanced chemical vapor deposition of chlorinated materials

International Nuclear Information System (INIS)

Shirai, Hajime

2004-01-01

We demonstrate the disorder-induced low-temperature crystallization in the nanocrystalline silicon film growth by rf plasma-enhanced chemical vapor deposition of H 2 -diluted SiH 2 Cl 2 and SiCl 4 . The combination of the chemical reactivity of SiCld (d: dangling bond) and SiHCl complexes and the release of the disorder-induced stress near the growing surface tightly correlate with the phase transitionity of SiCld and SiHCl complexes near the growing surface with the aid of atomic hydrogen, which induce higher degree of disorder in the a-Si network. These features are most prominent in the SiCl 4 compared with those of SiH 2 Cl 2 and SiH 4 , which preferentially enhance the nanocrystalline Si formation

Nanocrystalline Sr{sub 2}CeO{sub 4} thin films grown on silicon by laser ablation

Energy Technology Data Exchange (ETDEWEB)

Perea, Nestor [Posgrado en Fisica de Materiales, CICESE-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada, B.C., 22860 (Mexico); Hirata, G.A. [Centro de Ciencias de la Materia Condensada-UNAM, Km. 107 Carretera Tijuana Ensenada, Ensenada, B.C. 22860 (Mexico)]. E-mail: hirata@ccmc.unam.mx

2006-02-21

Blue-white luminescent Sr{sub 2}CeO{sub 4} thin films were deposited by using pulsed laser ablation ({lambda} = 248 nm wavelength) on 500 deg. C silicon (111) substrates under an oxygen pressure of 55 mTorr. High-resolution electron transmission microscopy, electron diffraction and X-ray diffraction analysis revealed that the films were composed of nanocrystalline Sr{sub 2}CeO{sub 4} grains of the order of 20-30 nm with a preferential orientation in the (130) crystallographic direction. The excitation and photoluminescence spectra measured on the films maintained the characteristic emission of bulk Sr{sub 2}CeO{sub 4} however, the emission peak appeared narrower and blue-shifted as compared to the luminescence spectrum of the target. The blue-shift and a preferential crystallographic orientation during the growth formation of the film is related to the nanocrystalline nature of the grains due to the quantum confinement behavior and surface energy minimization in nanostructured systems.

Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

Science.gov (United States)

Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

2016-09-01

The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

Science.gov (United States)

Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

2016-06-01

Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

International Nuclear Information System (INIS)

Barhdadi, A.

2005-08-01

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

Relationship of microstructure properties to oxygen impurities in nanocrystalline silicon photovoltaic materials

Science.gov (United States)

Xu, H.; Wen, C.; Liu, H.; Li, Z. P.; Shen, W. Z.

2013-03-01

We have fully investigated the correlation of microstructure properties and oxygen impurities in hydrogenated nanocrystalline silicon photovoltaic films. The achievement has been realized through a series of different hydrogen dilution ratio treatment by plasma enhanced chemical vapor deposition system. Raman scattering, x-ray diffraction, and ultraviolet-visible transmission techniques have been employed to characterize the physical structural characterization and to elucidate the structure evolution. The bonding configuration of the oxygen impurities was investigated by x-ray photoelectron spectroscopy and the Si-O stretching mode of infrared-transmission, indicating that the films were well oxidized in SiO2 form. Based on the consistence between the proposed structure factor and the oxygen content, we have demonstrated that there are two dominant disordered structure regions closely related to the post-oxidation contamination: plate-like configuration and clustered microvoids.

Thermal conductivity of nanocrystalline silicon: importance of grain size and frequency-dependent mean free paths.

Science.gov (United States)

Wang, Zhaojie; Alaniz, Joseph E; Jang, Wanyoung; Garay, Javier E; Dames, Chris

2011-06-08

The thermal conductivity reduction due to grain boundary scattering is widely interpreted using a scattering length assumed equal to the grain size and independent of the phonon frequency (gray). To assess these assumptions and decouple the contributions of porosity and grain size, five samples of undoped nanocrystalline silicon have been measured with average grain sizes ranging from 550 to 64 nm and porosities from 17% to less than 1%, at temperatures from 310 to 16 K. The samples were prepared using current activated, pressure assisted densification (CAPAD). At low temperature the thermal conductivities of all samples show a T(2) dependence which cannot be explained by any traditional gray model. The measurements are explained over the entire temperature range by a new frequency-dependent model in which the mean free path for grain boundary scattering is inversely proportional to the phonon frequency, which is shown to be consistent with asymptotic analysis of atomistic simulations from the literature. In all cases the recommended boundary scattering length is smaller than the average grain size. These results should prove useful for the integration of nanocrystalline materials in devices such as advanced thermoelectrics.

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

International Nuclear Information System (INIS)

Lin, C.-Y.; Fang, Y.-K.; Chen, S.-F.; Lin, P.-C.; Lin, C.-S.; Chou, T.-H; Hwang, J.S.; Lin, K.I.

2006-01-01

High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm

Improved luminescence properties of nanocrystalline silicon based electroluminescent device by annealing

International Nuclear Information System (INIS)

Sato, Keisuke; Hirakuri, Kenji

2006-01-01

We report an annealing effect on electrical and luminescence properties of a red electroluminescent device consisting of nanocrystalline silicon (nc-Si). The red luminescence was generated by flowing the forward current into the device at a low threshold direct current (DC) forward voltage with a rise of annealing temperature up to 500 deg. C. Moreover, the luminescence of the device annealed at 500 deg. C was more intense than that of the device annealed at 200 deg. C or less under the same forward current density, because of the injection of a large quantity of carriers to the radiative recombination centers at the nc-Si surface vicinity. These were attained by a low resistivity of indium tin oxide (ITO) electrode and good contact at the ITO electrode/luminous layer interface region by the annealing treatment. The above results indicated that the annealing treatment of the device is effective for the realization of high luminance due to the improvement in the injection efficiency of carriers to the radiative recombination centers

Influence of sample oxidation on the nature of optical luminescence from porous silicon

International Nuclear Information System (INIS)

Coulthard, I.; Antel, W. J. Jr.; Freeland, J. W.; Sham, T. K.; Naftel, S. J.; Zhang, P.

2000-01-01

Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (c) 2000 American Institute of Physics

Fabrication and structure of bulk nanocrystalline Al-Si-Ni-mishmetal alloys

International Nuclear Information System (INIS)

Latuch, Jerzy; Cieslak, Grzegorz; Kulik, Tadeusz

2007-01-01

Al-based alloys of structure consisting of nanosized Al crystals, embedded in an amorphous matrix, are interesting for their excellent mechanical properties, exceeding those of the commercial crystalline Al-based alloys. Recently discovered nanocrystalline Al alloys containing silicon (Si), rare earth metal (RE) and late transition metal (Ni), combine high tensile strength and good wear resistance. The aim of this work was to manufacture bulk nanocrystalline alloys from Al-Si-Ni-mishmetal (Mm) system. Bulk nanostructured Al 91-x Si x Ni 7 Mm 2 (x = 10, 11.6, 13 at.%) alloys were produced by ball milling of nanocrystalline ribbons followed by high pressure hot isostating compaction

Preparation of high-quality ultrathin transmission electron microscopy specimens of a nanocrystalline metallic powder.

Science.gov (United States)

Riedl, Thomas; Gemming, Thomas; Mickel, Christine; Eymann, Konrad; Kirchner, Alexander; Kieback, Bernd

2012-06-01

This article explores the achievable transmission electron microscopy specimen thickness and quality by using three different preparation methods in the case of a high-strength nanocrystalline Cu-Nb powder alloy. Low specimen thickness is essential for spatially resolved analyses of the grains in nanocrystalline materials. We have found that single-sided as well as double-sided low-angle Ar ion milling of the Cu-Nb powders embedded into epoxy resin produced wedge-shaped particles of very low thickness (coating on the sections consisting of epoxy deployed as the embedding material and considerable nanoscale thickness variations. Copyright © 2011 Wiley Periodicals, Inc.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Czech Academy of Sciences Publication Activity Database

Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

2016-01-01

Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

Science.gov (United States)

Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

2013-01-01

Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

International Nuclear Information System (INIS)

Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

2008-01-01

The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Colloidal solutions of luminescent porous silicon clusters with different cluster sizes

Czech Academy of Sciences Publication Activity Database

Herynková, Kateřina; Podkorytov, E.; Šlechta, Miroslav; Cibulka, Ondřej; Leitner, J.; Pelant, Ivan

2014-01-01

Roč. 9, č. 1 (2014), 1-5 ISSN 1931-7573 Institutional support: RVO:68378271 Keywords : nanocrystalline silicon * porous silicon * cluster size * luminescent markers Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.524, year: 2012

Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

International Nuclear Information System (INIS)

Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

2011-01-01

A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

Silicon carbide modified carbon materials. Formation of nanocrystalline SiC from thermochemical processes in the system coal tar pitch/poly(carbosilane)

Energy Technology Data Exchange (ETDEWEB)

Czosnek, C.; Janik, J.F.; Olejniczak, Z. [Stanislaw Staszic University of Mining & Meterology, AGH, Krakow (Poland)

2002-12-01

Poly(carbosilane) or PCS, (-CH{sub 2}-SiH(CH{sub 3})-){sub n}, is used as a Si-bearing precursor in combination with a coal tar pitch to study thermally induced transformations toward SiC-modified carbon composites. Following mixing of the components in the molten pitch at 160{sup o}C, the mixture is heated under argon atmosphere at 500{sup o}C yielding a solid carbonizate that is further subjected to separate pyrolysis experiments at 1300{sup o}C or 1650{sup o}C. At temperatures up to 500{sup o}C, the PCS reacts with suitable pitch components as well as undergoing decomposition reactions. At higher temperatures, clusters of prevailingly nanocrystalline beta-SiC are confirmed after the 1650{sup o}C pyrolysis step with indications that the formation of the compound starts at 1300{sup o}C. Si-29 MAS NMR, XRD, FT-IR, XPS, and elemental analysis are used to characterize each pyrolysis step, especially, from the viewpoint of transformation of silicon species to silicon carbide in the carbon matrix evolved from the pitch.

A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

NARCIS (Netherlands)

Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

2016-01-01

A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Double stabilization of nanocrystalline silicon: a bonus from solvent

Energy Technology Data Exchange (ETDEWEB)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

2016-01-15

Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Silicon Sheet Quality is Improved By Meniscus Control

Science.gov (United States)

Yates, D. A.; Hatch, A. E.; Goldsmith, J. M.

1983-01-01

Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Nanocrystalline SiC film thermistors for cryogenic applications

Science.gov (United States)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Infrared absorption study of hydrogen incorporation in thick nanocrystalline diamond films

International Nuclear Information System (INIS)

Tang, C.J.; Neves, A.J.; Carmo, M.C.

2005-01-01

We present an infrared (IR) optical absorbance study of hydrogen incorporation in nanocrystalline diamond films. The thick nanocrystalline diamond films were synthesized by microwave plasma-assisted chemical vapor deposition and a high growth rate about 3.0 μm/h was achieved. The morphology, phase quality, and hydrogen incorporation were assessed by means of scanning electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Large amount of hydrogen bonded to nanocrystalline diamond is clearly evidenced by the huge CH stretching band in the FTIR spectrum. The mechanism of hydrogen incorporation is discussed in light of the growth mechanism of nanocrystalline diamond. This suggests the potential of nanocrystalline diamond for IR electro-optical device applications

Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

NARCIS (Netherlands)

Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

2008-01-01

Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

Agglomeration of luminescent porous silicon nanoparticles in colloidal solutions

Czech Academy of Sciences Publication Activity Database

Herynková, Kateřina; Šlechta, Miroslav; Šimáková, Petra; Fučíková, Anna; Cibulka, Ondřej

2016-01-01

Roč. 11, Aug (2016), s. 1-5, č. článku 367. ISSN 1556-276X Grant - others:AV ČR(CZ) DAAD-16-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : nanocrystalline silicon * porous silicon * nanoparticles * colloids * agglomeration Subject RIV: BO - Biophysics Impact factor: 2.833, year: 2016

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

International Nuclear Information System (INIS)

Conde, J.C.; Martín, E.; Stefanov, S.; Alpuim, P.; Chiussi, S.

2012-01-01

Highlights: ► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid heating that provokes the H 2 desorption from the Si surface and bulk material. ► Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. ► These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO 2 . ► To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. ► The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25 ns pulse length and energy densities ranging from 50 mJ/cm 2 to 400 mJ/cm 2 have been calculated. Numerical results allowed us to estimate the dehydrogenation

Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

Science.gov (United States)

Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

2016-04-01

Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

NARCIS (Netherlands)

Liu, Y.|info:eu-repo/dai/nl/304831743

2010-01-01

The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary

Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Babchenko, Oleg; Varga, Marián; Stuchlík, Jiří; Jirásek, Vít; Prajzler, Václav; Nekvindová, P.; Kromka, Alexander

2016-01-01

Roč. 618, Nov (2016), s. 130-133 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-05053S Grant - others:AV ČR(CZ) MOST-15-04 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : hydrogenated amorphous silicon * nanocrystalline diamond * planar waveguides Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.879, year: 2016

Nanocrystalline ceramic materials

Science.gov (United States)

Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

1994-01-01

A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM methods

Energy Technology Data Exchange (ETDEWEB)

Huseynov, Elchin M., E-mail: elchin.h@yahoo.com [Department of Nanotechnology and Radiation Material Science, National Nuclear Research Center, Inshaatchilar pr. 4, AZ 1073 Baku (Azerbaijan); Institute of Radiation Problems of Azerbaijan National Academy of Sciences, B.Vahabzade 9, AZ 1143 Baku (Azerbaijan)

2017-04-01

Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning Electron Microscope (SEM) and Transmission Electron Microscopy (TEM) devices before and after neutron irradiation. The agglomeration of nanoparticles was studied comparatively before and after neutron irradiation. After neutron irradiation the amorphous layer surrounding the nanoparticles was analyzed in TEM device. Neutron irradiation defects in the 3C-SiC nanoparticles and other effects investigated by TEM device. The effect of irradiation on the crystal structure of the nanomaterial was studied by selected area electron diffraction (SAED) and electron diffraction patterns (EDP) analysis.

Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

OpenAIRE

Tan, H.

2015-01-01

Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

Science.gov (United States)

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

Patterned hydrophobic and hydrophilic surfaces of ultra-smooth nanocrystalline diamond layers

Energy Technology Data Exchange (ETDEWEB)

Mertens, M., E-mail: michael.mertens@uni-ulm.de [Institute of Micro and Nanomaterials, Ulm University, 89081 Ulm (Germany); Mohr, M.; Brühne, K.; Fecht, H.J. [Institute of Micro and Nanomaterials, Ulm University, 89081 Ulm (Germany); Łojkowski, M.; Święszkowski, W. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Łojkowski, W. [Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw (Poland)

2016-12-30

Highlights: • Hydrophobic and hydrophilic properties on fluorine-, hydrogen- and oxygen- terminated ultra-nanocrystalline diamond films. • Micropatterned - multi-terminated layers with both hydrophobic and hydrophilic areas on one sample. • Visualization of multi-terminated surfaces by e.g. SEM and LFM. • Roughness and friction investigations on different terminated surfaces. • Smooth and biocompatible surfaces with same roughness regardless of hydrophobicity for microbiological investigations. - Abstract: In this work, we show that ultra nanocrystalline diamond (UNCD) surfaces have been modified to add them hydrophobic and hydrophilic properties. The nanocrystalline diamond films were deposited using the hot filament chemical vapor deposition (HFCVD) technique. This allows growing diamond on different substrates which can be even 3D or structured. Silicon and, for optical applications, transparent quartz glass are the preferred substrates for UNCD layers growth. Fluorine termination leads to strong hydrophobic properties as indicated by a high contact angle for water of more than 100°. Hydrogen termination shows lesser hydrophobic behavior. Hydrophilic characteristics has been realised with oxygen termination. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX) measurements confirm the oxygen and fluorine- termination on the nanocrystalline diamond surface. Further, by micropatterning using photolithography, multi-terminated layers have been created with both hydrophobic and hydrophilic areas. In addition, we have shown that retermination is achieved, and the properties of the surface have been changed from hydrophobic to hydrophilic and vice versa. Micro- roughness and stress in the grown film influences slightly the wetting angle as well. The opportunity to realize local differences in hydrophobicity on nanocrystalline diamond layers, in any size or geometry, offers interesting applications for example in

Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Directory of Open Access Journals (Sweden)

Qinghua Zhu

2015-04-01

Full Text Available The near-infrared (NIR absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.

Visible and infrared photoluminescence from erbium-doped silicon nanocrystals produced by rf sputtering

Energy Technology Data Exchange (ETDEWEB)

Cerqueira, M.F.; Alpuim, P. [Departamento de Fisica, Universidade do Minho, Braga (Portugal); Losurdo, M. [Plasma Chemistry Research Center, CNR, Bari (Italy); Monteiro, T.; Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Aveiro (Portugal); Stepikova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation)

2007-06-15

Erbium-doped low-dimensional Si films with different microstructures were deposited by reactive magnetron sputtering on glass substrates by varying the hydrogen flow rate during deposition. Amorphous, micro- and nanocrystalline samples, consisting of Si nanocrystalls embedded in silicon-based matrices with different structures, were achieved with optical properties in the visible and IR depending on nanocrystalline fraction and matrix structure and chemical composition. Structural characterization was performed by X-ray diffraction in the grazing incidence geometry and Raman spectroscopy. The chemical composition was studied using RBS/ERD techniques. Spectroscopic ellipsometry was combined with the previous techniques to further resolve the film microstructure and composition. In particular, the distribution along the film thickness of the volume fractions of nanocrystalline/amorphous silicon and SiO{sub x} phases has been obtained. In this contribution we discuss visible and infrared photoluminescence as a function of sample microstructure and of the oxygen/hydrogen concentration ratio present in the matrix. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

International Nuclear Information System (INIS)

Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

2004-01-01

Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

Powder-based synthesis of nanocrystalline material components for structural application. Final report

Energy Technology Data Exchange (ETDEWEB)

Ilyuschenko, A.F.; Ivashko, V.S.; Okovity, V.A. [Powder Metallurgy Research Inst., Minsk (Belarus)] [and others

1998-12-01

Hydroxiapate spray coatings and substrates for implant production as well as multilayered metal ceramic coatings from nanocrystalline materials are a subject of the investigation. The work aims at the improvement of quality of said objects. This study has investigated the processes of hydroxiapatite powder production. Sizes, shapes and relief of initial HA powder surface are analyzed using SEM and TEM. Modes of HA plasma spraying on a substrate from titanium and associated compositions of traditional and nanocrystalline structure are optimized. The quality of the sprayed samples are studied using X-ray phase analysis and metallographic analysis. The results of investigations of bioceramic coating spraying on titanium are theoretically generalized, taking into account obtained experimental data. The results of investigations of ion-beam technology are presented for spraying multilayered coatings consisting of alternating metal-ceramic layers of nanocrystalline structure.

Nanocrystalline solids

International Nuclear Information System (INIS)

Gleiter, H.

1991-01-01

Nanocrystalline solids are polycrystals, the crystal size of which is a few (typically 1 to 10) nanometres so that 50% or more of the solid consists of incoherent interfaces between crystals of different orientations. Solids consisting primarily of internal interfaces represent a separate class of atomic structures because the atomic arrangement formed in the core of an interface is known to be an arrangement of minimum energy in the potential field of the two adjacent crystal lattices with different crystallographic orientations on either side of the boundary core. These boundary conditions result in atomic structures in the interfacial cores which cannot be formed elsewhere (e.g. in glasses or perfect crystals). Nanocrystalline solids are of interest for the following four reasons: (1) Nanocrystalline solids exhibit an atomic structure which differs from that of the two known solid states: the crystalline (with long-range order) and the glassy (with short-range order). (2) The properties of nanocrystalline solids differ (in some cases by several orders of magnitude) from those of glasses and/or crystals with the same chemical composition, which suggests that they may be utilized technologically in the future. (3) Nanocrystalline solids seem to permit the alloying of conventionally immiscible components. (4) If small (1 to 10 nm diameter) solid droplets with a glassy structure are consolidated (instead of small crystals), a new type of glass, called nanoglass, is obtained. Such glasses seem to differ structurally from conventional glasses. (orig.)

Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

NARCIS (Netherlands)

Verkerk, A.D.|info:eu-repo/dai/nl/304831719

2009-01-01

To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

Twinning interactions induced amorphisation in ultrafine silicon grains

Energy Technology Data Exchange (ETDEWEB)

Cao, Y. [School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Zhang, L.C., E-mail: liangchi.zhang@unsw.edu.au [School of Mechanical and Manufacturing Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Zhang, Y. [School of Mechatronics Engineering, Harbin Institute of Technology (China)

2016-03-21

Detailed transmission electron microscopy analysis on a severely deformed Al-Si composite material has revealed that partial dislocation slips and deformation twinning are the major plastic deformation carriers in ultrafine silicon grains. This resembles the deformation twinning activities and mechanisms observed in nano-crystalline face-centred-cubic metallic materials. While deformation twinning and amorphisation in Si were thought unlikely to co-exist, it is observed for the first time that excessive twinning and partial dislocation interactions can lead to localised solid state amorphisation inside ultrafine silicon grains.

Nanocrystalline Al-based alloys - lightweight materials with attractive mechanical properties

International Nuclear Information System (INIS)

Latuch, J; Cieslak, G; Dimitrov, H; Krasnowski, M; Kulik, T

2009-01-01

In this study, several ways of bulk nanocrystalline Al-based alloys' production by high-pressure compaction of powders were explored. The effect of chemical composition and compaction parameters on the structure, quality and mechanical properties of the bulk samples was studied. Bulk nanocrystalline Al-Mm-Ni-(Fe,Co) alloys were prepared by ball-milling of amorphous ribbons followed by consolidation. The maximum microhardness (540 HV0.1) was achieved for the samples compacted at 275 deg. C under 7.7 GPa (which resulted in an amorphous bulk) and nanocrystallised at 235 deg. C for 20 min. Another group of the produced materials were bulk nanocrystalline Al-Si-(Ni,Fe)-Mm alloys obtained by ball-milling of nanocrystalline ribbons and consolidation. The hardness of these samples achieved the value five times higher (350HV) than that of commercial 4xxx series Al alloys. Nanocrystalline Al-based alloys were also prepared by mechanical alloying followed by hot-pressing. In this group of materials, there were Al-Fe alloys containing 50-85 at.% of Al and ternary or quaternary Al-Fe-(Ti, Si, Ni, Mg, B) alloys. Microhardness of these alloys was in the range of 613 - 1235 HV0.2, depending on the composition.

Silicon heterojunction solar cell passivation in combination with nanocrystalline silicon oxide emitters

NARCIS (Netherlands)

Gatz, H.A.; Rath, J.K.; Verheijen, M.A.; Kessels, W.M.M.; Schropp, R.E.I.

2016-01-01

Silicon heterojunction solar cells (SHJ) are well known for their high efficiencies, enabled by their remarkably high open-circuit voltages (VOC). A key factor in achieving these values is a good passivation of the crystalline wafer interface. One of the restrictions during SHJ solar cell production

Plane shock loading on mono- and nano-crystalline silicon carbide

Science.gov (United States)

Branicio, Paulo S.; Zhang, Jingyun; Rino, José P.; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya

2018-03-01

The understanding of the nanoscale mechanisms of shock damage and failure in SiC is essential for its application in effective and damage tolerant coatings. We use molecular-dynamics simulations to investigate the shock properties of 3C-SiC along low-index crystallographic directions and in nanocrystalline samples with 5 nm and 10 nm grain sizes. The predicted Hugoniot in the particle velocity range of 0.1 km/s-6.0 km/s agrees well with experimental data. The shock response transitions from elastic to plastic, predominantly deformation twinning, to structural transformation to the rock-salt phase. The predicted strengths from 12.3 to 30.9 GPa, at the Hugoniot elastic limit, are in excellent agreement with experimental data.

Electrical properties of pressure quenched silicon by thermal spraying

International Nuclear Information System (INIS)

Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

2007-01-01

High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

Interaction of Light with Metallized Ultrathin Silicon Membrane

Science.gov (United States)

Shome, Krishanu

Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the

Thermally Stable Nanocrystalline Steel

Science.gov (United States)

Hulme-Smith, Christopher Neil; Ooi, Shgh Woei; Bhadeshia, Harshad K. D. H.

2017-10-01

Two novel nanocrystalline steels were designed to withstand elevated temperatures without catastrophic microstructural changes. In the most successful alloy, a large quantity of nickel was added to stabilize austenite and allow a reduction in the carbon content. A 50 kg cast of the novel alloy was produced and used to verify the formation of nanocrystalline bainite. Synchrotron X-ray diffractometry using in situ heating showed that austenite was able to survive more than 1 hour at 773 K (500 °C) and subsequent cooling to ambient temperature. This is the first reported nanocrystalline steel with high-temperature capability.

Photoluminescence properties of sol-gel derived SiO.sub.2./sub. layers doped with porous silicon

Czech Academy of Sciences Publication Activity Database

Švrček, Vladimír; Pelant, Ivan; Rehspringer, J. L.; Gilliot, P.; Ohlmann, D.; Crégut, O.; Hönerlage, B.; Chvojka, T.; Valenta, J.; Dian, J.

2002-01-01

Roč. 19, - (2002), s. 233-236 ISSN 0928-4931 R&D Projects: GA AV ČR IAA1010809; GA AV ČR IAB2949101; GA AV ČR IAB1112901 Grant - others:GA UK(XC) 144/2000/B/FYZ Institutional research plan: CEZ:AV0Z1010914 Keywords : nanocrystalline silicon * photoluminescence * porous silicon Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.734, year: 2002

Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

2011-01-01

Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

Formation of continuous nanocrystalline diamond layer on glass and silicon at low temperatures

Czech Academy of Sciences Publication Activity Database

Kromka, Alexander; Rezek, Bohuslav; Remeš, Zdeněk; Michalka, M.; Ledinský, Martin; Zemek, Josef; Potměšil, Jiří; Vaněček, Milan

2008-01-01

Roč. 14, 7-8 (2008), s. 181-186 ISSN 0948-1907 R&D Projects: GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 1M06002 Grant - others:Marie Curie RTN DRIVE(XE) MRTN-CT-2004-512224 Institutional research plan: CEZ:AV0Z10100521 Keywords : AFM * low temperature growth * nanocrystalline diamond * SEM * XPS Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Energy Technology Data Exchange (ETDEWEB)

Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

2011-08-15

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

International Nuclear Information System (INIS)

Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

2011-01-01

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Energy Technology Data Exchange (ETDEWEB)

Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-15

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

Frequency-dependent failure mechanisms of nanocrystalline gold interconnect lines under general alternating current

Science.gov (United States)

Luo, X. M.; Zhang, B.; Zhang, G. P.

2014-09-01

Thermal fatigue failure of metallization interconnect lines subjected to alternating currents (AC) is becoming a severe threat to the long-term reliability of micro/nanodevices with increasing electrical current density/power. Here, thermal fatigue failure behaviors and damage mechanisms of nanocrystalline Au interconnect lines on the silicon glass substrate have been investigated by applying general alternating currents (the pure alternating current coupled with a direct current (DC) component) with different frequencies ranging from 0.05 Hz to 5 kHz. We observed both thermal fatigue damages caused by Joule heating-induced cyclic strain/stress and electromigration (EM) damages caused by the DC component. Besides, the damage formation showed a strong electrically-thermally-mechanically coupled effect and frequency dependence. At lower frequencies, thermal fatigue damages were dominant and the main damage forms were grain coarsening with grain boundary (GB) cracking/voiding and grain thinning. At higher frequencies, EM damages took over and the main damage forms were GB cracking/voiding of smaller grains and hillocks. Furthermore, the healing effect of the reversing current was considered to elucidate damage mechanisms of the nanocrystalline Au lines generated by the general AC. Lastly, a modified model was proposed to predict the lifetime of the nanocrystalline metal interconnect lines, i.e., that was a competing drift velocity-based approach based on the threshold time required for reverse diffusion/healing to occur.

Optimization of plasma parameters for the production of silicon nano-crystals

CERN Document Server

Chaabane, N; Vach, H; Cabarrocas, P R I

2003-01-01

We use silane-hydrogen plasmas to synthesize silicon nano-crystals in the gas phase and thermophoresis to collect them onto a cooled substrate. To distinguish between nano-crystals formed in the plasma and those grown on the substrate, as a result of surface and subsurface reactions, we have simultaneously deposited films on a conventional substrate heated at 250 deg. C and on a second substrate cooled down to 90 deg. C. A series of samples deposited at various discharge pressures, in the range of 400 mTorr to 1.2 Torr, have been characterized by Raman spectroscopy and ellipsometry. At low pressure (400-500 mTorr), the films are amorphous on the cold substrate and micro-crystalline on the hot one. As pressure increases, gas phase reactions lead to the formation of nano-crystalline particles which are attracted by the cold substrate due to thermophoresis. Consequently, we obtain nano-crystalline silicon thin films on the cold substrate and amorphous thin films on the heated one in the pressure range of 600-900...

Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

CERN Document Server

Sachenko, A V; Manojlov, E G; Svechnikov, S V

2001-01-01

The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

Energy Technology Data Exchange (ETDEWEB)

Amor, Sana Ben, E-mail: sana.benamor1@gmail.com [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); University of Applied Medical Sciences of Hafr El Baten (Saudi Arabia); Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

2016-01-01

Graphical abstract: At high annealing temperatures, many atoms do not suffer the attraction of surface species due to the thermal agitation and consequently few atoms are adsorbed. As the temperature is lowered the adsorption is more efficient to the point that is no more atoms in the gas phase. Indeed at relatively low temperatures, the atoms have too little energy to escape from the surface or even to vibrate against it. They lost their degree of freedom in the direction perpendicular to the surface. But this does not prevent the atoms to diffuse along the surface. As a result, the layer's thickness decrease with increasing the annealing temperature. - Highlights: The results extracted from this work are: • The post-deposition thermal treatment improves the crystallinity the film at moderate temperature (500 °C). • The higher annealing temperature can lead to decrease the silicon–hydrogen bonds and increase the Si–Si bonds. • Moderate annealing temperature (700 °C) seems to be crucial for obtaining high minority carrier life times. • Hydrogen effusion phenomenon start occurring at 500–550 °C and get worsen at 900 °C. - Abstract: In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900 �

Synthesis and characterization of a nanocrystalline diamond aerogel

Energy Technology Data Exchange (ETDEWEB)

Pauzauskie, Peter J.; Crowhurst, Jonathan C.; Worsley, Marcus A.; Laurence, Ted A.; Kilcoyne, A. L. David; Wang, Yinmin; Willey, Trevor M.; Visbeck, Kenneth S.; Fakra, Sirine C.; Evans, William J.; Zaug, Joseph M.; Satcher, Jr., Joe H.

2011-07-06

Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.

Nanocrystalline diamond films for biomedical applications

DEFF Research Database (Denmark)

Pennisi, Cristian Pablo; Alcaide, Maria

2014-01-01

Nanocrystalline diamond films, which comprise the so called nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD), represent a class of biomaterials possessing outstanding mechanical, tribological, and electrical properties, which include high surface smoothness, high corrosion...... performance of nanocrystalline diamond films is reviewed from an application-specific perspective, covering topics such as enhancement of cellular adhesion, anti-fouling coatings, non-thrombogenic surfaces, micropatterning of cells and proteins, and immobilization of biomolecules for bioassays. In order...

Strength and structure of nanocrystalline titanium

International Nuclear Information System (INIS)

Noskova, N.I.; Pereturina, I.A.; Elkina, O.A.; Stolyarov, V.V.

2004-01-01

Investigation results on strength and plasticity of nanocrystalline titanium VT-1 are presented. Specific features of plastic deformation on tension of this material specimens in an electron microscope column are studied in situ. It is shown that nanocrystalline titanium strength and plasticity at room temperature are dependent on the structure and nanograin size. It is revealed that deformation processes in nanocrystalline titanium are characterized by activation of deformation rotational modes and microtwinning [ru

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

Energy Technology Data Exchange (ETDEWEB)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L. [Nanjing Hydraulic Research Institute, Nanjing (China); Shen, M. X. [Hehai University, Nanjing (China)

2017-06-15

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

International Nuclear Information System (INIS)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L.; Shen, M. X.

2017-01-01

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Nanocrystalline diamond in carbon implanted SiO{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Tsoi, K.A.; Prawer, S.; Nugent, K.W.; Walker, R. J.; Weiser, P.S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

Nanocrystalline diamond in carbon implanted SiO{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Tsoi, K A; Prawer, S; Nugent, K W; Walker, R J; Weiser, P S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

Quality factor improvement of silicon nitride micro string resonators

DEFF Research Database (Denmark)

Schmid, Silvan; Malm, Bjarke; Boisen, Anja

2011-01-01

Resonant micro and nano strings are of interest for sensor applications due to their extraordinary high quality factors, low mass and tunable resonant frequency. It has been found that the quality factor of strings is usually limited by clamping loss. In this work, clamping loss has been addressed...... by varying the clamping design and string geometry. We present silicon nitride micro strings with quality factors (Q) of up to 4 million in high vacuum achieved by minimizing clamping loss. For applications such as for chemical sensing, strings need to vibrate at atmospheric pressure. Maximal quality factor...

Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

International Nuclear Information System (INIS)

Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

2016-01-01

Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

Quality Tests of Double-Sided Silicon Strip Detectors

CERN Document Server

Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

1997-01-01

The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

Solid state consolidation nanocrystalline copper-tungsten using cold spray

Energy Technology Data Exchange (ETDEWEB)

Hall, Aaron Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sarobol, Pylin [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argibay, Nicolas [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Clark, Blythe [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Diantonio, Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2015-09-01

It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Bilirubin adsorption on nanocrystalline titania films

International Nuclear Information System (INIS)

Yang Zhengpeng; Si Shihui; Fung Yingsing

2007-01-01

Bilirubin produced from hemoglobin metabolism and normally conjugated with albumin is a kind of lipophilic endotoxin, and can cause various diseases when its concentration is high. Bilirubin adsorption on the nanocrystalline TiO 2 films was investigated using quartz crystal microbalance, UV-vis and IR techniques, and factors affecting its adsorption such as pH, bilirubin concentration, solution ionic strength, temperature and thickness of TiO 2 films were discussed. The amount of adsorption and parameters for the adsorption kinetics were estimated from the frequency measurements of quartz crystal microbalance. A fresh surface of the nanocrystalline TiO 2 films could be photochemically regenerated because holes and hydroxyl radicals were generated by irradiating the nanocrystalline TiO 2 films with UV light, which could oxidize and decompose organic materials, and the nanocrystalline TiO 2 films can be easily regenerated when it is used as adsorbent for the removal of bilirubin

Effects of grain size and grain boundaries on defect production in nanocrystalline 3C-SiC

International Nuclear Information System (INIS)

Swaminathan, N.; Kamenski, Paul J.; Morgan, Dane; Szlufarska, Izabela

2010-01-01

Cascade simulations in single crystal and nanocrystalline SiC have been conducted in order to determine the role of grain boundaries and grain size on defect production during primary radiation damage. Cascades are performed with 4 and 10 keV silicon as the primary knock-on atom (PKA). Total defect production is found to increase with decreasing grain size, and this effect is shown to be due to increased production in grain boundaries and changing grain boundary volume fraction. In order to consider in-grain defect production, a new mapping methodology is developed to properly normalize in-grain defect production rates for nanocrystalline materials. It is shown that the presence of grain boundaries does not affect the total normalized in-grain defect production significantly (the changes are lower than ∼20%) for the PKA energies considered. Defect production in the single grain containing the PKA is also studied and found to increase for smaller grain sizes. In particular, for smaller grain sizes the defect production decreases with increasing distance from the grain boundary while for larger grain sizes the presence of the grain boundaries has negligible effect on defect production. The results suggest that experimentally observed changes in radiation resistance of nanocrystalline materials may be due to long-term damage evolution rather than changes in defect production rates from primary damage.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

Alkaline earth metal, silicon, chlorine, hydrogen. A reaction system for the heterogeneous hydrodehalogenation of silicon tetrachloride to nanocrystalline silicon; Erdalkalimetall-Silicium-Chlor-Wasserstoff. Das Reaktionssystem fuer die heterogene Hydrodehalogenierung von Siliciumtetrachlorid bis zum nanokristallinen Silicium

Energy Technology Data Exchange (ETDEWEB)

Fiedler, Katja

2012-02-17

Reactions of an alkaline earth metal with a SiCl{sub 4}-H{sub 2} result in a quaternary system with a metastable quaternary phase which separates into the metal chloride and nanocrystalline silicon upon cooling. The present study was dedicated to a making a detailed characterisation of the quaternary phase. For this purpose the properties of the quaternary system were derived from those of the six binary and four ternary systems. The first ever characterisation of the surface by means of photoelectron spectroscopy was undertaken. It also proved possible for the first time to follow the formation reaction by measuring the potential difference across the reaction system. Using the results of the characterisation the author presents first steps towards identifying the formation mechanism involved. [German] Im quaternaeren System Erdalkalimetall-Silicium-Chlor-Wasserstoff bildet sich bei der Umsetzung des Metalls mit einer SiCl{sub 4}-H{sub 2}-Atmosphaere eine quaternaere Phase. Diese metastabile Phase zerfaellt beim Abkuehlen in das Metallchlorid und Silicium in nanokristalliner Form. Die vorliegende Arbeit hat sich mit der tiefergehenden Charakterisierung der quaternaeren Phase beschaeftigt. Dazu wurden die Eigenschaften des quaternaeren Systems aus den Eigenschaften der sechs binaeren und vier ternaeren Systemen abgeleitet. Die Oberflaeche wurde erstmals mit Photoelektronenspektroskopie charakterisiert. Zusaetzlich gelang erstmalig die Verfolgung der Bildungsreaktion durch Messung des Spannungsabfalls ueber das Reaktionssystem. Erste Ansaetze zur Aufklaerung des Bildungsmechanismus ausgehend von den Ergebnissen der Charakterisierung wurden zusaetzlich aufgezeigt.

Nanocrystalline diamond film as cathode for gas discharge sensors

Energy Technology Data Exchange (ETDEWEB)

Jou, Shyankay, E-mail: sjou@mail.ntust.edu.t [Graduate Institute of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Huang, Bohr-Ran [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Wu, Meng-Chang [Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan (China)

2010-05-31

Nanocrystalline diamond (NCD) film was deposited on a silicon substrate utilizing microwave plasma-enhanced chemical vapor deposition in a mixed flow of methane, hydrogen and argon. The deposited film had a cauliflower-like morphology, and was composed of NCD, carbon clusters and mixed sp{sup 2}- and sp{sup 3}-bonded carbon. Electron field emission (EFE) in vacuum and electrical discharges in Ar, N{sub 2} and O{sub 2} using the NCD film as the cathode were characterized. The turn-on field for EFE and the geometric enhancement factor for the NCD film were 8.5 V/{mu}m and 668, respectively. The breakdown voltages for Ar, N{sub 2} and O{sub 2} increased with pressures from 1.33 x 10{sup 4} Pa to 1.01 x 10{sup 5} Pa, following the right side of the normal Paschen curve.

Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds

Czech Academy of Sciences Publication Activity Database

Stehlík, Štěpán; Varga, Marián; Štenclová, Pavla; Ondič, Lukáš; Ledinský, Martin; Pangrác, Jiří; Vaňek, O.; Lipov, J.; Kromka, Alexander; Rezek, Bohuslav

2017-01-01

Roč. 9, č. 44 (2017), s. 38842-38853 ISSN 1944-8244 R&D Projects: GA MŠk(CZ) LD15003; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : detonation nanodiamond * surface chemistry * hydrogenation * zeta potential * nucleation density * nanocrystalline diamond * SiV center Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 7.504, year: 2016

The radiation response of mesoporous nanocrystalline zirconia thin films

Energy Technology Data Exchange (ETDEWEB)

Manzini, Ayelén M.; Alurralde, Martin A. [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina); Giménez, Gustavo [Instituto Nacional de Tecnología Industrial - CMNB, Av. General Paz 5445, 1650 San Martín, Provincia de Buenos Aires (Argentina); Luca, Vittorio, E-mail: vluca@cnea.gov.ar [Comisión Nacional de Energía Atómica, Centro Atómico Constituyentes, Av. General Paz 1499, 1650 San Martin, Provincia de Buenos Aires (Argentina)

2016-12-15

The next generation of nuclear systems will require materials capable of withstanding hostile chemical, physical and radiation environments over long time-frames. Aside from its chemical and physical stability, crystalline zirconia is one of the most radiation tolerant materials known. Here we report the first ever study of the radiation response of nanocrystalline and mesoporous zirconia and Ce{sup 3+}-stabilized nanocrystalline zirconia (Ce{sub 0.1}Zr{sub 0.9}O{sub 2}) thin films supported on silicon wafers. Zirconia films prepared using the block copolymer Brij-58 as the template had a thickness of around 60–80 nm. In the absence of a stabilizing trivalent cation they consisted of monoclinic and tetragonal zirconia nanocrystals with diameters in the range 8–10 nm. Films stabilized with Ce{sup 3+} contained only the tetragonal phase. The thin films were irradiated with iodine ions of energies of 70 MeV and 132 keV at low fluences (10{sup 13} - 10{sup 14} cm{sup −2}) corresponding to doses of 0.002 and 1.73 dpa respectively, and at 180 keV and high fluences (2 × 10{sup 16} cm{sup −2}) corresponding to 82.4 dpa. The influence of heavy ion irradiation on the nanocrystalline structure was monitored through Rietveld analysis of grazing incidence X-ray diffraction (GIXRD) patterns recorded at angles close to the critical angle to ensure minimum contribution to the diffraction pattern from the substrate. Irradiation of the mesoporous nanocrystalline zirconia thin films with 70 MeV iodine ions, for which electronic energy loss is dominant, resulted in slight changes in phase composition and virtually no change in crystallographic parameters as determined by Rietveld analysis. Iodine ion bombardment in the nuclear energy loss regime (132–180 keV) at low fluences did not provoke significant changes in phase composition or crystallographic parameters. However, at 180 keV and high fluences the monoclinic phase was totally eliminated from the GIXRD

Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Kočka, Jan

2012-01-01

Roč. 358, č. 17 (2012), s. 2082-2085 ISSN 0022-3093. [International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011] R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701 Grant - others:7. Framework programme of the European Community(XE) no. 240826 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous and nanocrystalline silicon films * atomic force microscopy (AFM) * local photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012 http://www.sciencedirect.com/science/article/pii/S0022309312000178

Quality assurance database for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Lymanets, Anton [Physikalisches Institut, Universitaet Tuebingen (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System is a main tracking device of the CBM Experiment at FAIR. Its construction includes production, quality assurance and assembly of large number of components, e.g., 106 carbon fiber support structures, 1300 silicon microstrip sensors, 16.6k readout chips, analog microcables, etc. Detector construction is distributed over several production and assembly sites and calls for a database that would be extensible and allow tracing the components, integrating the test data, monitoring the component statuses and data flow. A possible implementation of the above-mentioned requirements is being developed at GSI (Darmstadt) based on the FAIR DB Virtual Database Library that provides connectivity to common SQL-Database engines (PostgreSQL, Oracle, etc.). Data structure, database architecture as well as status of implementation are discussed.

Pressure effects on the dissipative behavior of nanocrystalline diamond microelectromechanical resonators

International Nuclear Information System (INIS)

Santos, J T; Chu, V; Conde, J P; Holz, T; Fernandes, A J S; Costa, F M

2015-01-01

Diamond-based microelectromechanical resonators have the potential of enhanced performance due to the chemical inertness of the diamond structural layer and its high Young’s modulus, high wear resistance, low thermal expansion coefficient, and very high thermal conductivity. In this work, the resonance frequency and quality factor of MEMS resonators based on nanocrystalline diamond films are characterized under different air pressures. The dynamic behavior of 50–300 μm long linear bridges and double ended tuning forks, with resonance frequencies between 0.5 and 15 MHz and quality factors as high as 50 000 are described as a function of measurement pressure from high vacuum(∼10 mTorr) up to atmospheric conditions. The resonance frequencies and quality factors in vacuum show good agreement with the theoretical models including anchor and thermoelastic dissipation (TED). The Young’s moduli for nanocrystalline diamond films extrapolated from experimental data are between 840–920 GPa. The critical pressure values, at which the quality factor starts decreasing due to dissipation in air, are dependent on the resonator length. Longer structures, with quality factors limited by TED and lower resonance frequencies, have low critical pressures, of the order of 1–10 Torr and go from an intrinsic dissipation, to a molecular dissipation regime and finally to a region of viscous dissipation. Shorter resonators, with higher resonance frequencies and quality factors limited by anchor losses, have higher critical pressures, some higher than atmospheric pressure, and enter directly into the viscous dissipation regime from the intrinsic region. (paper)

Size dependence of elastic mechanical properties of nanocrystalline aluminum

Energy Technology Data Exchange (ETDEWEB)

Xu, Wenwu; Dávila, Lilian P., E-mail: ldavila@ucmerced.edu

2017-04-24

The effect of grain size on the elastic mechanical properties of nanocrystalline pure metal Al is quantified by molecular dynamics simulation method. In this work, the largest nanocrystalline Al sample has a mean grain size of 29.6 nm and contains over 100 millions atoms in the modeling system. The simulation results show that the elastic properties including elastic modulus and ultimate tensile strength of nanocrystalline Al are relatively insensitive to the variation of mean grain size above 13 nm yet they become distinctly grain size dependent below 13 nm. Moreover, at a grain size <13 nm, the elastic modulus decreases monotonically with decreasing grain size while the ultimate tensile strength of nanocrystalline Al initially decreases with the decrease of the grain size down to 9 nm and then increases with further reduction of grain size. The increase of ultimate tensile strength below 9 nm is believed to be a result of an extended elasticity in the ultrafine grain size nanocrystalline Al. This study can facilitate the prediction of varied mechanical properties for similar nanocrystalline materials and even guide testing and fabrication schemes of such materials.

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

International Nuclear Information System (INIS)

Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

2012-01-01

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

Enhanced Activity of Nanocrystalline Zeolites for Selective Catalytic Reduction of NOx

International Nuclear Information System (INIS)

Sarah C. Larson; Vicki H. Grassian

2006-01-01

Nanocrystalline zeolites with discrete crystal sizes of less than 100 nm have different properties relative to zeolites with larger crystal sizes. Nanocrystalline zeolites have improved mass transfer properties and very large internal and external surface areas that can be exploited for many different applications. The additional external surface active sites and the improved mass transfer properties of nanocrystalline zeolites offer significant advantages for selective catalytic reduction (SCR) catalysis with ammonia as a reductant in coal-fired power plants relative to current zeolite based SCR catalysts. Nanocrystalline NaY was synthesized with a crystal size of 15-20 nm and was thoroughly characterized using x-ray diffraction, electron paramagnetic resonance spectroscopy, nitrogen adsorption isotherms and Fourier Transform Infrared (FT-IR) spectroscopy. Copper ions were exchanged into nanocrystalline NaY to increase the catalytic activity. The reactions of nitrogen dioxides (NO x ) and ammonia (NH 3 ) on nanocrystalline NaY and CuY were investigated using FT-IR spectroscopy. Significant conversion of NO 2 was observed at room temperature in the presence of NH 3 as monitored by FT-IR spectroscopy. Copper-exchanged nanocrystalline NaY was more active for NO 2 reduction with NH 3 relative to nanocrystalline NaY

Structure and thermal stability of nanocrystalline materials

Indian Academy of Sciences (India)

In addition, study of the thermal stability of nanocrystalline materials against significant grain growth is both scientific and technological interest. A sharp increase in grain size (to micron levels) during consolidation of nanocrystalline powders to obtain fully dense materials may consequently result in the loss of some unique ...

Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Katsuyuki Okada

2007-01-01

Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

Science.gov (United States)

Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

2017-11-23

Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of silicone expanders and implants on echocardiographic image quality after breast reconstruction.

Science.gov (United States)

Pignatti, Marco; Mantovani, Francesca; Bertelli, Luca; Barbieri, Andrea; Pacchioni, Lucrezia; Loschi, Pietro; De Santis, Giorgio

2013-08-01

Use of silicone expanders and implants is the most common breast reconstruction technique after mastectomy. Postmastectomy patients often need echocardiographic monitoring of potential cardiotoxicity induced by cancer chemotherapy. The impairment of the echocardiographic acoustic window caused by silicone implants for breast augmentation has been reported. This study investigates whether the echocardiographic image quality was impaired in women reconstructed with silicone expanders and implants. The records of 44 consecutive women who underwent echocardiographic follow-up after breast reconstruction with expanders and implants at the authors' institution from January of 2000 to August of 2012 were reviewed. The population was divided into a study group (left or bilateral breast expanders/implants, n=30) and a control group (right breast expanders/implants, n=14). The impact of breast expanders/implants on echocardiographic image quality was tested (analysis of covariance model). Patients with a breast expander/implant (left or bilateral and right breast expanders/implants) were included. The mean volume of the breast devices was 353.2±125.5 cc. The quality of the echocardiographic images was good or sufficient in the control group; in the study group, it was judged as adequate in only 50 percent of cases (15 patients) and inadequate in the remaining 15 patients (pimplants in postmastectomy left breast reconstruction considerably reduce the image quality of echocardiography. This may have important clinical implications, given the need for periodic echocardiographic surveillance before and during chemotherapy. Therapeutic, III.

Nanocrystalline silicon as the light emitting material of a field emission display device

International Nuclear Information System (INIS)

Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

2008-01-01

A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

Solid state synthesis of water-dispersible silicon nanoparticles from silica nanoparticles

International Nuclear Information System (INIS)

Kravitz, Keren; Kamyshny, Alexander; Gedanken, Aharon; Magdassi, Shlomo

2010-01-01

A solid state synthesis for obtaining nanocrystalline silicon was performed by high temperature reduction of commercial amorphous nanosilica with magnesium powder. The obtained silicon powder contains crystalline silicon phase with lattice spacings characteristic of diamond cubic structure (according to high resolution TEM), and an amorphous phase. In 29 Si CP MAS NMR a broad multicomponent peak corresponding to silicon is located at -61.28 to -69.45 ppm, i.e. between the peaks characteristic of amorphous and crystalline Si. The powder has displayed red luminescence while excited under UV illumination, due to quantum confinement within the nanocrystals. The silicon nanopowder was successfully dispersed in water containing poly(vinyl alcohol) as a stabilizing agent. The obtained dispersion was also characterized by red photoluminescence with a band maximum at 710 nm, thus enabling future functional coating applications. - Graphical abstract: High temperature reduction of amorphous nanosilica with magnesium powder results in the formation of powder containing crystalline silicon phase The powder displays red luminescence while excited under UV illumination, due to quantum confinement within the Si nanocrystals, and can be successfully dispersed in water containing poly(vinyl alcohol) as a stabilizing agent. The obtained dispersion was also characterized by red photoluminescence, thus enabling future functional coating applications.

Bimodal microstructure and deformation of cryomilled bulk nanocrystalline Al-7.5Mg alloy

International Nuclear Information System (INIS)

Lee, Z.; Witkin, D.B.; Radmilovic, V.; Lavernia, E.J.; Nutt, S.R.

2005-01-01

The microstructure, mechanical properties and deformation response of bimodal structured nanocrystalline Al-7.5Mg alloy were investigated. Grain refinement was achieved by cryomilling of atomized Al-7.5Mg powders, and then cryomilled nanocrystalline powders blended with 15 and 30% unmilled coarse-grained powders were consolidated by hot isostatic pressing followed by extrusion to produce bulk nanocrystalline alloys. Bimodal bulk nanocrystalline Al-7.5Mg alloys, which were comprised of nanocrystalline grains separated by coarse-grain regions, show balanced mechanical properties of enhanced yield and ultimate strength and reasonable ductility and toughness compared to comparable conventional alloys and nanocrystalline metals. The investigation of tensile and hardness test suggests unusual deformation mechanisms and interactions between ductile coarse-grain bands and nanocrystalline regions

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

International Nuclear Information System (INIS)

Larionov, Pavel

2016-10-01

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Energy Technology Data Exchange (ETDEWEB)

Halindintwali, Sylvain; Knoesen, D.; Julies, B.A.; Arendse, C.J.; Muller, T. [University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Gengler, Regis Y.N.; Rudolf, P.; Loosdrecht, P.H.M. van [Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen (Netherlands)

2011-09-15

Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH{sub 4}/CH{sub 4}/H{sub 2} mixture at a substrate temperature below 400 C. Thermal annealing in an argon environment up to 900 C shows that the films crystallize as {mu}c-Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X-rays photoelectron spectroscopy we show that the films evolve from the amorphous SiH{sub x}/SiCH{sub 2} structure to nanocrystalline Si and SiC upon annealing at a temperature of 900 C. A strong RT photoluminescence peak of similar shape has been observed at around 420 nm in both as-deposited and annealed samples. Time-resolved luminescence measurements reveal that this peak is fast decaying with lifetimes ranging from 0.5 to {proportional_to}1.1 ns. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Photocatalytic removal of NO and HCHO over nanocrystalline Zn2SnO4 microcubes for indoor air purification

International Nuclear Information System (INIS)

Ai Zhihui; Lee Shuncheng; Huang Yu; Ho Wingkei; Zhang Lizhi

2010-01-01

Nanocrystalline Zn 2 SnO 4 microcubes were hydrothermally synthesized and systematically characterized by XRD, SEM, TEM, XPS, N 2 adsorption-desorption, and UV-vis DRS analysis. The resulting Zn 2 SnO 4 microcubes with the edge size ranging from 0.8 to 1.2 μm were composed of numerous nanoparticles with size of 10-20 nm, and their optical band gap energy was estimated to be 3.25 eV from the UV-vis diffuse reflectance spectra. On degradation of nitrogen monoxide (NO) and formaldehyde (HCHO) at typical concentrations for indoor air quality, these nanocrystalline Zn 2 SnO 4 microcubes exhibited superior photocatalytic activity to the hydrothermally synthesized ZnO, SnO 2 , and Degussa TiO 2 P25, as well as C doped TiO 2 under UV-vis light irradiation. This enhanced photocatalytic activity of the nanocrystalline Zn 2 SnO 4 microcubes was attributed to their bigger surface areas, smaller particle size, special porous structures, and special electronic configuration. The nanocrystalline Zn 2 SnO 4 microcubes were chemically stable as there was no obvious deactivation during the multiple photocatalytic reactions. This work presents a promising approach for scaling-up industrial production of Zn 2 SnO 4 nanostructures and suggests that the synthesized nanocrystalline Zn 2 SnO 4 microcubes are promising photocatalysts for indoor air purification.

Silicon application to the soil on soybean yield and seed physiological quality

Directory of Open Access Journals (Sweden)

Sandro de Oliveira

2015-10-01

Full Text Available Use of quality seeds, balanced plant nutrition and the adoption of adequate cultivation techniques are critical to the success of the soybean crop. Use of silicon (Si is a clean technology from an environmental point of view, which can confer several benefits to the plants as stimulate growth and plant production, improve tolerance of plants to attack by insects and diseases, reduce perspiration and increase the photosynthetic rate and protect against abiotic stresses. The goal was to evaluate the effect of soil Si application derived from rice husk ash on the agronomic characteristics, productivity and physiological quality of soybean cultivars seeds. The experiment was conducted in pots of 18 L filled with soil, under a randomized block design with four replications. The soybean cultivars were BMX Turbo RR and NA 5909 RR, grown under five doses of silicon (0, 1, 2, 3, and 4 t ha-1. Agronomic traits and seed yield were evaluated (total number of pods on branches, total number of seeds on the branches, the total number of pods on the main stem, total number of seeds on the main stem, total number of pods per plant, total number of seeds per plant, seed weight per plant and seed weight of 1000. Physiological seed quality was evaluated by germination and vigor tests (first count of germination, cold test, accelerated aging, shoot length and root. The soil application of silicon is beneficial for the soybean crop, improving the main agronomic characteristics (total number of pods on branches, total number of seeds in the branches, total number of pods per plant, weight of seeds per plant and increasing seed yield per plant in soybean cultivar BMX Turbo RR. The mass of a thousand seeds is positively influenced by the dose of 1.67 t ha-1 for the cultivar BMX Turbo RR and up to a dose of 2.32 t ha-1 for the cultivar NA 5909 RR. Cultivar BMX Turbo RR seed vigor is increased with the use of silicon in the soil.

Improved surface quality of anisotropically etched silicon {111} planes for mm-scale optics

International Nuclear Information System (INIS)

Cotter, J P; Hinds, E A; Zeimpekis, I; Kraft, M

2013-01-01

We have studied the surface quality of millimetre-scale optical mirrors produced by etching CZ and FZ silicon wafers in potassium hydroxide to expose the {111} planes. We find that the FZ surfaces have four times lower noise power at spatial frequencies up to 500 mm −1 . We conclude that mirrors made using FZ wafers have higher optical quality. (technical note)

Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

International Nuclear Information System (INIS)

Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

2006-01-01

Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

Quality assurance of the silicon microstrip sensors for the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

Nanocrystalline permanent magnets with enhanced properties

International Nuclear Information System (INIS)

Leonowicz, M.

2002-01-01

Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (∼ 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel

2016-10-15

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

Guided assembly of nanoparticles on electrostatically charged nanocrystalline diamond thin films

Directory of Open Access Journals (Sweden)

Verveniotis Elisseos

2011-01-01

Full Text Available Abstract We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp2 phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp2 phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems.

Thermodynamic and experimental study on phase stability in nanocrystalline alloys

International Nuclear Information System (INIS)

Xu Wenwu; Song Xiaoyan; Lu Nianduan; Huang Chuan

2010-01-01

Nanocrystalline alloys exhibit apparently different phase transformation characteristics in comparison to the conventional polycrystalline alloys. The special phase stability and phase transformation behavior, as well as the essential mechanisms of the nanocrystalline alloys, were described quantitatively in a nanothermodynamic point of view. By introducing the relationship between the excess volume at the grain boundary and the nanograin size, the Gibbs free energy was determined distinctly as a function of temperature and the nanograin size. Accordingly, the grain-size-dependence of the phase stability and phase transformation characteristics of the nanocrystalline alloy were calculated systematically, and the correlations between the phase constitution, the phase transformation temperature and the critical nanograin size were predicted. A series of experiments was performed to investigate the phase transformations at room temperature and high temperatures using the nanocrystalline Sm 2 Co 17 alloy as an example. The phase constitution and phase transformation sequence found in nanocrystalline Sm 2 Co 17 alloys with various grain-size levels agree well with the calculations by the nanothermodynamic model.

Tailoring and patterning the grain size of nanocrystalline alloys

International Nuclear Information System (INIS)

Detor, Andrew J.; Schuh, Christopher A.

2007-01-01

Nanocrystalline alloys that exhibit grain boundary segregation can access thermodynamically stable or metastable states with the average grain size dictated by the alloying addition. Here we consider nanocrystalline Ni-W alloys and demonstrate that the W content controls the grain size over a very broad range: ∼2-140 nm as compared with ∼2-20 nm in previous work on strongly segregating systems. This trend is attributed to a relatively weak tendency for W segregation to the grain boundaries. Based upon this observation, we introduce a new synthesis technique allowing for precise composition control during the electrodeposition of Ni-W alloys, which, in turn, leads to precise control of the nanocrystalline grain size. This technique offers new possibilities for understanding the structure-property relationships of nanocrystalline solids, such as the breakdown of Hall-Petch strength scaling, and also opens the door to a new class of customizable materials incorporating patterned nanostructures

Protein-modified nanocrystalline diamond thin films for biosensor applications.

Science.gov (United States)

Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A; Hernando, Jorge; Catharino, Silvia C R; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

2004-10-01

Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

In vitro corrosion, cytotoxicity and hemocompatibility of bulk nanocrystalline pure iron

International Nuclear Information System (INIS)

Nie, F L; Zheng, Y F; Wei, S C; Hu, C; Yang, G

2010-01-01

Bulk nanocrystalline pure iron rods were fabricated by the equal channel angular pressure (ECAP) technique up to eight passes. The microstructure and grain size distribution, natural immersion and electrochemical corrosion in simulated body fluid, cellular responses and hemocompatibility were investigated in this study. The results indicate that nanocrystalline pure iron after severe plastic deformation (SPD) would sustain durable span duration and exhibit much stronger corrosion resistance than that of the microcrystalline pure iron. The interaction of different cell lines reveals that the nanocrystalline pure iron stimulates better proliferation of fibroblast cells and preferable promotion of endothelialization, while inhibits effectively the viability of vascular smooth muscle cells (VSMCs). The burst of red cells and adhesion of the platelets were also substantially suppressed on contact with the nanocrystalline pure iron in blood circulation. A clear size-dependent behavior from the grain nature deduced by the gradual refinement microstructures was given and well-behaved in vitro biocompatibility of nanocrystalline pure iron was concluded.

Magnetic properties of nanocrystalline pyrrhotite prepared by high-energy milling

DEFF Research Database (Denmark)

Balaz, P.; Godocikova, E.; Alacova, A.

2004-01-01

The nanocrystalline pyrrhotite was prepared by high-energy milling of lead sulphide with elemental Fe acting as reducing element. X-ray diffractometry, Mossbauer spectroscopy and VSM magnetometry were used to determine the properties of nanocrystalline iron sulphide prepared by the corresponding...... mechanochemical reaction. Pyrrhotite Fe1-xS together with the residual Fe metal were identified by the X-ray diffractometry. The kinetic studies performed by Mossbauer spectroscopy and VSM magnetometry allowed us to follow in more details the progress of the nanocrystalline magnetic phase formation during...

Theoretical study on recoilless fractions of simple cubic monatomic nanocrystalline particles

International Nuclear Information System (INIS)

Huang Jianping; Wang Luya

2002-01-01

Recoilless fractions of simple cubic monatomic nanocrystalline particles are calculated by using displacement-displacement Green's function. The numerical results show that the recoilless fractions on the surface of monatomic nanocrystalline particles are smaller than those in the inner, and they decrease when the particle size increase, the recoilless fractions of whole monatomic nanocrystalline particles increase when the particle size increase. These effects are more evident when the temperature is higher

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-12-15

Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO

Energy Technology Data Exchange (ETDEWEB)

Kang, Ki-Doo; Kim, Ji-Uk; Yun, Hwa-Kyung; Lim, Chul-Hong; Kim, Young-Chil; Kim, Myong-Seop; Park, Sang-Jun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2007-10-15

By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a high accuracy for a target neutron dose have been achieved from the early works of NTD. However, to maintain this excellent quality, the neutron irradiation fluence should be continuously modified and controlled. So, in this work, an activity to maintain the irradiation quality is introduced.

Synthesis of nanocrystalline fluorinated hydroxyapatite

Indian Academy of Sciences (India)

Fluorinated hydroxyapatite; nanocrystalline; microwave synthesis; dissolution. ... HA by the presence of other ions such as carbonate, magnesium, fluoride, etc. ... Fourier transform infrared spectroscopy (FT–IR) and laser Raman spectroscopy.

Effects of precursors on the crystal structure and photoluminescence of CdS nanocrystalline

International Nuclear Information System (INIS)

Fu Zuoling; Zhou Shihong; Shi Jinsheng; Zhang Siyuan

2005-01-01

A series of cadmium sulfide (CdS) nanocrystalline were synthesized by precipitation from a mixture of aqueous solutions of cadmium salts and sulfur salts without adding any surface-termination agent. Their crystal structures and particle sizes were determined by X-ray diffraction (XRD). The CdS nanocrystalline precipitated from different precursors exhibited three cases: cubic phase, hexagonal phase and a hybrid of cubic and hexagonal phases. The photoluminescence (PL) of cadmium salt precursors and CdS nanocrystalline is also analyzed. Similar spectral band structure of cadmium salt precursors and CdS nanocrystalline is found. The PL of 3.4, 2.4 and 2.0 nm sized CdS nanocrystalline with the same crystal structure indicated quantum confinement effect

Effect of junction quality on the performance of a silicon solar cell ...

African Journals Online (AJOL)

In this work, a modeling study of the effect of the junction quality on the performance of a silicon solar cell is presented. Based on a one dimensional modeling of the solar cell, the continuity equation of excess minority carriers is solved with boundary conditions taking into account the intrinsic junction recombination velocity ...

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Quality Assurance and Performance Tests of Silicon Detector Modules for the CMS/Tracker

CERN Document Server

Dragicevic, Marko

2005-01-01

After providing a short overview of the LHC accelerator, the CMS experiment and it’s various detector systems, we will have an in-depth look on silicon semiconductor particle detectors. Various important aspects like theoretical principles, radiation damage and actual design considerations are discussed and the quality assurance scheme for the sensor and module production is introduced. A strong emphasis is made on the ARC module teststand which was set up and operated be the author. Another important aspect in establishing a good quality assurance scheme is flexibility and keeping an eye on the unexpected. At one such occasion, the author had to gather custom made test equipment, to investigate certain effects in silicon sensors manufactured by ST Microelectronics. Conclusions from these measurement could only be drawn very cautiously, as the manufacturing process and many of its subtle changes, remained a well kept secret of the company. Nevertheless, the investigations proofed to be useful and ST Microel...

New route to the fabrication of nanocrystalline diamond films

International Nuclear Information System (INIS)

Varshney, Deepak; Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

2014-01-01

Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production

The correlation of blue shift of photoluminescence and morphology of silicon nanoporous

Energy Technology Data Exchange (ETDEWEB)

Al-Jumaili, Batool E. B., E-mail: batooleneaze@gmail.com [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Department of Physics, Anbar University (Iraq); Talib, Zainal A.; Josephine, L.Y.; Paiman, Suriati B.; Muh’d, Ibrahim B.; Mofdal, Manahil E. E. [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Ahmed, Naser M.; Abdulateef, Sinan A. [School of Physics, USM, 11800 Penang (Malaysia); Al-Jumaily, Abdulmajeed H. J. [Department of Computer and Communication Systems Engineering, Universiti Putra Malaysia (UPM), Serdang, Selangor 43400 (Malaysia); Ramizy, Asmiet [Department of Physics, Anbar University (Iraq)

2016-07-06

Porous silicon with diameters ranging from 6.41 to 7.12 nm were synthesized via electrochemical etching by varied anodization current density in ethanoic solutions containing aqueous hydrofluoric acid up to 65 mA/cm{sup 2}.The luminescence properties of the nanoporous at room temperature were analyzed via photoluminescence spectroscopy. Photoluminescence PL spectra exhibit a broad emission band in the range of 360-700 nm photon energy. The PL spectrum has a blue shift in varied anodization current density; the blue shift incremented as the existing of anodization although the intensity decreased. The current blue shift is owning to alteration of silicon nanocrystal structure at the superficies. The superficial morphology of the PS layers consists of unified and orderly distribution of nanocrystalline Si structures, have high porosity around (93.75%) and high thickness 39.52 µm.

A quality quantitative method of silicon direct bonding based on wavelet image analysis

Science.gov (United States)

Tan, Xiao; Tao, Zhi; Li, Haiwang; Xu, Tiantong; Yu, Mingxing

2018-04-01

The rapid development of MEMS (micro-electro-mechanical systems) has received significant attention from researchers in various fields and subjects. In particular, the MEMS fabrication process is elaborate and, as such, has been the focus of extensive research inquiries. However, in MEMS fabrication, component bonding is difficult to achieve and requires a complex approach. Thus, improvements in bonding quality are relatively important objectives. A higher quality bond can only be achieved with improved measurement and testing capabilities. In particular, the traditional testing methods mainly include infrared testing, tensile testing, and strength testing, despite the fact that using these methods to measure bond quality often results in low efficiency or destructive analysis. Therefore, this paper focuses on the development of a precise, nondestructive visual testing method based on wavelet image analysis that is shown to be highly effective in practice. The process of wavelet image analysis includes wavelet image denoising, wavelet image enhancement, and contrast enhancement, and as an end result, can display an image with low background noise. In addition, because the wavelet analysis software was developed with MATLAB, it can reveal the bonding boundaries and bonding rates to precisely indicate the bond quality at all locations on the wafer. This work also presents a set of orthogonal experiments that consist of three prebonding factors, the prebonding temperature, the positive pressure value and the prebonding time, which are used to analyze the prebonding quality. This method was used to quantify the quality of silicon-to-silicon wafer bonding, yielding standard treatment quantities that could be practical for large-scale use.

Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

1994-12-01

Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

Effect of nanocrystalline phase on the electrochemical behavior of the alloy Ti{sub 60}Ni{sub 40}

Energy Technology Data Exchange (ETDEWEB)

Mathur, Shubhra, E-mail: shubhramathur3@gmail.com [Department of Physics, Jagannath Gupta Institute of Engineering and Technology, Jaipur 303905 (India); Jain, Rohit [Department of Physics, Jagannath Gupta Institute of Engineering and Technology, Jaipur 303905 (India); Kumar, Praveen [Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi 110012 (India); Sachdev, K.; Sharma, S.K. [Department of Physics, Malaviya National Institute of Technology, JLN-Marg, Jaipur 302017 (India)

2012-10-15

Highlights: Black-Right-Pointing-Pointer Polarization studies carried out on different structural states of the alloy Ti{sub 60}Ni{sub 40}. Black-Right-Pointing-Pointer Nanocrystalline state exhibits superior corrosion resistance as compared to other states of the alloy Ti{sub 60}Ni{sub 40}. Black-Right-Pointing-Pointer XPS results show that nanocrystalline specimen contains only TiO{sub 2} species. Black-Right-Pointing-Pointer It leads to the formation of adherent and stable film and improves the corrosion resistance. - Abstract: Polarization studies were carried out on crystalline, amorphous and nanocrystalline states of the alloy Ti{sub 60}Ni{sub 40} in 1 M NaCl aqueous medium at room temperature. It was observed that nanocrystalline state exhibits superior corrosion resistance as compared to other states of the alloy Ti{sub 60}Ni{sub 40}. Cyclic voltammetry studies and weight loss data corroborates the polarization studies. X-ray photoelectron spectroscopy (XPS) technique was used in order to decipher the nature of the oxide film formed after corrosion test on the specimens of the alloy Ti{sub 60}Ni{sub 40}. The crystalline specimen of the alloy Ti{sub 60}Ni{sub 40} shows the presence of Ti{sup 2+}, Ti{sup 3+} and Ti{sup 4+} species along with some unoxidized Ti in metallic form (Ti{sup 0}) whereas the amorphous specimen consists of Ti{sup 3+} and Ti{sup 4+} species. On the other hand nanocrystalline specimen contains only Ti{sup 4+} species. Thus it is likely that the presence of fewer species and the absence of Ti{sup 3+} in the oxide film formed on nanocrystalline specimen of Ti{sub 60}Ni{sub 40} lead to the formation of a film with greater homogeneity and protective quality in comparison to the films formed on crystalline and amorphous states of the alloy Ti{sub 60}Ni{sub 40} in 1 M NaCl aqueous medium.

Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

Energy Technology Data Exchange (ETDEWEB)

Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

2016-07-01

Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

NATO Advanced Research Workshop on Properties and Applications of Nanocrystalline Alloys from Amorphous Precursors

CERN Document Server

Idzikowski, Bogdan; Miglierini, Marcel

2005-01-01

Metallic (magnetic and non-magnetic) nanocrystalline materials have been known for over ten years but only recent developments in the research into those complex alloys and their metastable amorphous precursors have created a need to summarize the most important accomplishments in the field. This book is a collection of articles on various aspects of metallic nanocrystalline materials, and an attempt to address this above need. The main focus of the papers is put on the new issues that emerge in the studies of nanocrystalline materials, and, in particular, on (i) new compositions of the alloys, (ii) properties of conventional nanocrystalline materials, (iii) modeling and simulations, (iv) preparation methods, (v) experimental techniques of measurements, and (vi) different modern applications. Interesting phenomena of the physics of nanocrystalline materials are a consequence of the effects induced by the nanocrystalline structure. They include interface physics, the influence of the grain boundaries, the aver...

Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

International Nuclear Information System (INIS)

Prados, C; Pina, E; Hernando, A; Montone, A

2002-01-01

The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Guy Beaucarne

2007-01-01

with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

2015-11-15

The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

Nanocrystalline Aluminum Truss Cores for Lightweight Sandwich Structures

Science.gov (United States)

Schaedler, Tobias A.; Chan, Lisa J.; Clough, Eric C.; Stilke, Morgan A.; Hundley, Jacob M.; Masur, Lawrence J.

2017-12-01

Substitution of conventional honeycomb composite sandwich structures with lighter alternatives has the potential to reduce the mass of future vehicles. Here we demonstrate nanocrystalline aluminum-manganese truss cores that achieve 2-4 times higher strength than aluminum alloy 5056 honeycombs of the same density. The scalable fabrication approach starts with additive manufacturing of polymer templates, followed by electrodeposition of nanocrystalline Al-Mn alloy, removal of the polymer, and facesheet integration. This facilitates curved and net-shaped sandwich structures, as well as co-curing of the facesheets, which eliminates the need for extra adhesive. The nanocrystalline Al-Mn alloy thin-film material exhibits high strength and ductility and can be converted into a three-dimensional hollow truss structure with this approach. Ultra-lightweight sandwich structures are of interest for a range of applications in aerospace, such as fairings, wings, and flaps, as well as for the automotive and sports industries.

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Syntheses of nanocrystalline BaTiO3 and their optical properties

Science.gov (United States)

Yu, J.; Chu, J.; Zhang, M.

Stoichiometric and titanium-excess nanocrystalline barium titanates were synthesized using a hydrothermal process at various hydrothermal temperatures and with further heat treatment at 500 °C and 900 °C. Owing to the different process conditions, the excess titanium exists in different states and configurations within the nanocrystalline BaTiO3 matrix; this was demonstrated by X-ray diffraction, Raman scattering, and photoluminescence. In these nanocrystalline BaTiO3, the 590, 571, 543 and 694 nm light emission bands were observed; mechanisms leading to such emissions were also discussed.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Electrochemistry of Inorganic Nanocrystalline Electrode Materials for Lithium Batteries

Directory of Open Access Journals (Sweden)

C. W. Kwon

2003-01-01

much different from that of traditional crystalline ones because of their significant ‘surface effects’. In connection with that, the nanocrystalline cathode materials are reported to have an enhanced electrochemical activity when the first significative electrochemical step is insertion of Li ions (discharge process. The “electrochemical grafting” concept will be given as a plausible explanation. As illustrative examples, electrochemical behaviors of nanocrystalline manganese oxydes are presented.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

High-pressure structural behaviour of nanocrystalline Ge

International Nuclear Information System (INIS)

Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

International Nuclear Information System (INIS)

Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

1994-01-01

The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p - porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n + and p + porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure

Effect of grain size on corrosion of nanocrystalline copper in NaOH solution

International Nuclear Information System (INIS)

Luo Wei; Xu Yimin; Wang Qiming; Shi Peizhen; Yan Mi

2010-01-01

Research highlights: → Coppers display an active-passive-transpassive behaviour with duplex passive film. → Grain size variation has little effect on the overall corrosion behaviour of Cu. → Little effect on corrosion may be due to duplex passivation in NaOH solution. → Bulk nanocrystalline Cu show bamboo-like flake corrosion structure. - Abstract: Effect of grain size on corrosion of bulk nanocrystalline copper was investigated using potentiodynamic polarization measurements in 0.1 M NaOH solution. Bulk nanocrystalline copper was prepared by inert gas condensation and in situ warm compress (IGCWC) method. The grain sizes of all bulk nanocrystalline samples were determined to be 48, 68 and 92 nm using X-ray diffraction (XRD). Results showed that bulk coppers displayed an active-passive-transpassive behaviour with duplex passive films. From polycrystalline to nanocrystalline, grain size variation showed little effect on the overall corrosion resistance of copper samples.

Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

International Nuclear Information System (INIS)

Mohammadi, Majid; Ghasemi, Ali; Tavoosi, Majid

2016-01-01

Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe_2O_3–B_2O_3 powder mixtures with sufficient amount of CaH_2 were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys can be successfully synthesized by the reduction reaction of Fe_2O_3 and B_2O_3 with CaH_2 during mechanical alloying. The structure of produced Fe_9_5B_5 and Fe_8_5B_1_5 alloys was a combination of Fe and Fe_2B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–B_2O_3–CaH_2 during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

Synthesis of Mesoporous Nanocrystalline Zirconia by Surfactant-Assisted Hydrothermal Approach.

Science.gov (United States)

Nath, Soumav; Biswas, Ashik; Kour, Prachi P; Sarma, Loka S; Sur, Ujjal Kumar; Ankamwar, Balaprasad G

2018-08-01

In this paper, we have reported the chemical synthesis of thermally stable mesoporous nanocrystalline zirconia with high surface area using a surfactant-assisted hydrothermal approach. We have employed different type of surfactants such as CTAB, SDS and Triton X-100 in our synthesis. The synthesized nanocrystalline zirconia multistructures exhibit various morphologies such as rod, mortar-pestle with different particle sizes. We have characterized the zirconia multistructures by X-ray diffraction study, Field emission scanning electron microscopy, Attenuated total refection infrared spectroscopy, UV-Vis spectroscopy and photoluminescence spectroscopy. The thermal stability of as synthesized zirconia multistructures was studied by thermo gravimetric analysis, which shows the high thermal stability of nanocrystalline zirconia around 900 °C temperature.

Nanocrystalline Ni-Co Alloy Synthesis by High Speed Electrodeposition

OpenAIRE

Idris, Jamaliah; Christian, Chukwuekezie; Gaius, Eyu

2013-01-01

Electrodeposition of nanocrystals is economically and technologically viable production path for the synthesis of pure metals and alloys both in coatings and bulk form. The study presents nanocrystalline Ni-Co alloy synthesis by high speed electrodeposition. Nanocrystalline Ni-Co alloys coatings were prepared by direct current (DC) and deposited directly on steel and aluminum substrates without any pretreatment, using high speed electrodeposition method. The influence of the electrolysis par...

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Microstructure and nanoindentation of the CLAM steel with nanocrystalline grains under Xe irradiation

Energy Technology Data Exchange (ETDEWEB)

Chang, Yongqin, E-mail: chang@ustb.edu.cn; Zhang, Jing; Li, Xiaolin; Guo, Qiang; Wan, Farong; Long, Yi

2014-12-15

This work presents an early look at irradiation effects on China low activation martensitic (CLAM) steel with nanocrystalline grains (NC-CLAM steels) under 500 keV Xe-ion bombardment at room temperature to doses up to 5.3 displacements per atom (dpa). The microstructure in the topmost region of the steel is composed of nanocrystalline grains with an average diameter of 13 nm. As the samples were implanted at low dose, the nanocrystalline grains had martensite lath structure, and many dislocations and high density bubbles were introduced into the NC-CLAM steels. As the irradiation dose up to 5.3 dpa, a tangled dislocation network exists in the lath region, and the size of the bubbles increases. X-ray diffraction results show that the crystal quality decreases after irradiation, although the nanocrystals obviously coarsen. Grain growth under irradiation may be ascribed to the direct impact of the thermal spike on grain boundaries in the NC-CLAM steels. In irradiated samples, a compressive stress exists in the surface layer because of grain growth and irradiation-introduced defects, while the irradiation introduced grain-size coarsening and defects gradients from the surface to matrix result in a tensile stress in the irradiated NC-CLAM steels. Nanoindentation was used to estimate changes in mechanical properties during irradiation, and the results show that the hardness of the NC-CLAM steels increases with increasing irradiation dose, which was ascribed to the competition between the grain boundaries and the irradiation-introduced defects.

Accumulation and recovery of defects in ion-irradiated nanocrystalline gold

Energy Technology Data Exchange (ETDEWEB)

Chimi, Y. E-mail: chimi@popsvr.tokai.jaeri.go.jp; Iwase, A.; Ishikawa, N.; Kobiyama, M.; Inami, T.; Okuda, S

2001-09-01

Effects of 60 MeV {sup 12}C ion irradiation on nanocrystalline gold (nano-Au) are studied. The experimental results show that the irradiation-produced defects in nano-Au are thermally unstable because of the existence of a large volume fraction of grain boundaries. This suggests a possibility of the use of nanocrystalline materials as irradiation-resistant materials.

A phenomenological variational multiscale constitutive model for intergranular failure in nanocrystalline materials

KAUST Repository

Siddiq, A.; El Sayed, Tamer S.

2013-01-01

We present a variational multiscale constitutive model that accounts for intergranular failure in nanocrystalline fcc metals due to void growth and coalescence in the grain boundary region. Following previous work by the authors, a nanocrystalline

Nanocrystalline diamond coatings for mechanical seals applications.

Science.gov (United States)

Santos, J A; Neto, V F; Ruch, D; Grácio, J

2012-08-01

A mechanical seal is a type of seal used in rotating equipment, such as pumps and compressors. It consists of a mechanism that assists the connection of the rotating shaft to the housings of the equipments, preventing leakage or avoiding contamination. A common cause of failure of these devices is end face wear out, thus the use of a hard, smooth and wear resistant coating such as nanocrystalline diamond would be of great importance to improve their working performance and increase their lifetime. In this paper, different diamond coatings were deposited by the HFCVD process, using different deposition conditions. Additionally, the as-grown films were characterized for, quality, morphology and microstructure using scanning electron microscopy (SEM) and Raman spectroscopy. The topography and the roughness of the films were characterized by atomic force microscopy (AFM).

Biologically inspired rosette nanotubes and nanocrystalline hydroxyapatite hydrogel nanocomposites as improved bone substitutes

International Nuclear Information System (INIS)

Zhang Lijie; Webster, Thomas J; Rodriguez, Jose; Raez, Jose; Myles, Andrew J; Fenniri, Hicham

2009-01-01

Today, bone diseases such as bone fractures, osteoporosis and bone cancer represent a common and significant public health problem. The design of biomimetic bone tissue engineering materials that could restore and improve damaged bone tissues provides exciting opportunities to solve the numerous problems associated with traditional orthopedic implants. Therefore, the objective of this in vitro study was to create a biomimetic orthopedic hydrogel nanocomposite based on the self-assembly properties of helical rosette nanotubes (HRNs), the osteoconductive properties of nanocrystalline hydroxyapatite (HA), and the biocompatible properties of hydrogels (specifically, poly(2-hydroxyethyl methacrylate), pHEMA). HRNs are self-assembled nanomaterials that are formed from synthetic DNA base analogs in water to mimic the helical nanostructure of collagen in bone. In this study, different geometries of nanocrystalline HA were controlled by either hydrothermal or sintering methods. 2 and 10 wt% nanocrystalline HA particles were well dispersed into HRN hydrogels using ultrasonication. The nanocrystalline HA and nanocrystalline HA/HRN hydrogels were characterized by x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Mechanical testing studies revealed that the well dispersed nanocrystalline HA in HRN hydrogels possessed improved mechanical properties compared to hydrogel controls. In addition, the results of this study provided the first evidence that the combination of either 2 or 10 wt% nanocrystalline HA and 0.01 mg ml -1 HRNs in hydrogels greatly increased osteoblast (bone-forming cell) adhesion up to 236% compared to hydrogel controls. Moreover, this study showed that HRNs stimulated HA nucleation and mineralization along their main axis in a way that is very reminiscent of the HA/collagen assembly pattern in natural bone. In summary, the presently observed excellent properties of the biomimetic nanocrystalline HA/HRN hydrogel composites

Microstructure characterization and cation distribution of nanocrystalline cobalt ferrite

Energy Technology Data Exchange (ETDEWEB)

Abbas, Y.M., E-mail: ymabbas@live.com [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Mansour, S.A.; Ibrahim, M.H. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Ali, Shehab E., E-mail: shehab_physics@yahoo.com [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt)

2011-11-15

Nanocrystalline cobalt ferrite has been synthesized using two different methods: ceramic and co-precipitation techniques. The nanocrystalline ferrite phase has been formed after 3 h of sintering at 1000 deg. C. The structural and microstructural evolutions of the nanophase have been studied using X-ray powder diffraction and the Rietveld method. The refinement result showed that the type of the cationic distribution over the tetrahedral and octahedral sites in the nanocrystalline lattice is partially an inverse spinel. The transmission electronic microscope analysis confirmed the X-ray results. The magnetic properties of the samples were characterized using a vibrating sample magnetometer. - Highlights: > The refinement result showed that the cationic distribution over the sites in the lattice is partially an inverse spinel. > The transmission electronic microscope analysis confirmed the X-ray results. > The magnetic properties of the samples were characterized using a vibrating sample magnetometer.

Silicon wafers for integrated circuit process

OpenAIRE

Leroy , B.

1986-01-01

Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

Silver film on nanocrystalline TiO{sub 2} support: Photocatalytic and antimicrobial ability

Energy Technology Data Exchange (ETDEWEB)

Vukoje, Ivana D., E-mail: ivanav@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Tomašević-Ilić, Tijana D., E-mail: tommashev@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Zarubica, Aleksandra R., E-mail: zarubica2000@yahoo.com [Department of Chemistry, Faculty of Science and Mathematics, University of Niš, Višegradska 33, 18000 Niš (Serbia); Dimitrijević, Suzana, E-mail: suzana@tmf.bg.ac.rs [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Budimir, Milica D., E-mail: mickbudimir@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Vranješ, Mila R., E-mail: mila@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Šaponjić, Zoran V., E-mail: saponjic@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Nedeljković, Jovan M., E-mail: jovned@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia)

2014-12-15

Highlights: • Simple photocatalytic rout for deposition of Ag on nanocrystalline TiO{sub 2} films. • High antibactericidal efficiency of deposited Ag on TiO{sub 2} support. • Improved photocatalytic performance of TiO{sub 2} films in the presence of deposited Ag. - Abstract: Nanocrystalline TiO{sub 2} films were prepared on glass slides by the dip coating technique using colloidal solutions consisting of 4.5 nm particles as a precursor. Photoirradiation of nanocrystalline TiO{sub 2} film modified with alanine that covalently binds to the surface of TiO{sub 2} and at the same time chelate silver ions induced formation of metallic silver film. Optical and morphological properties of thin silver films on nanocrystalline TiO{sub 2} support were studied by absorption spectroscopy and atomic force microscopy. Improvement of photocatalytic performance of nanocrystalline TiO{sub 2} films after deposition of silver was observed in degradation reaction of crystal violet. Antimicrobial ability of deposited silver films on nanocrystalline TiO{sub 2} support was tested in dark as a function of time against Escherichia coli, Staphylococcus aureus, and Candida albicans. The silver films ensured maximum cells reduction of both bacteria, while the fungi reduction reached satisfactory 98.45% after 24 h of contact.

Direct Coating of Nanocrystalline Diamond on Steel

Science.gov (United States)

Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

2012-09-01

Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

Fabrication of an Fe80.5Si7.5B6Nb5Cu Amorphous-Nanocrystalline Powder Core with Outstanding Soft Magnetic Properties

Science.gov (United States)

Zhang, Zongyang; Liu, Xiansong; Feng, Shuangjiu; Rehman, Khalid Mehmood Ur

2018-03-01

In this study, the melt spinning method was used to develop Fe80.5Si7.5B6Nb5Cu amorphous ribbons in the first step. Then, the Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline core with a compact microstructure was obtained by multiple processes. The main properties of the magnetic powder core, such as micromorphology, thermal behavior, permeability, power loss and quality factor, have been analyzed. The obtained results show that an Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline duplex core has high permeability (54.8-57), is relatively stable at different frequencies and magnetic fields, and the maximum power loss is only 313 W/kg; furthermore, it has a good quality factor.

Inter- and intra-agglomerate fracture in nanocrystalline nickel.

Science.gov (United States)

Shan, Zhiwei; Knapp, J A; Follstaedt, D M; Stach, E A; Wiezorek, J M K; Mao, S X

2008-03-14

In situ tensile straining transmission electron microscopy tests have been carried out on nanocrystalline Ni. Grain agglomerates (GAs) were found to form very frequently and rapidly ahead of an advancing crack with sizes much larger than the initial average grain size. High-resolution electron microscopy indicated that the GAs most probably consist of nanograins separated by low-angle grain boundaries. Furthermore, both inter- and intra-GA fractures were observed. The observations suggest that these newly formed GAs may play an important role in the formation of the dimpled fracture surfaces of nanocrystalline materials.

Nanocrystalline diamond: In vitro biocompatibility assessment by MG63 and human bone marrow cells cultures.

Science.gov (United States)

Amaral, M; Dias, A G; Gomes, P S; Lopes, M A; Silva, R F; Santos, J D; Fernandes, M H

2008-10-01

Nanocrystalline diamond (NCD) has a great potential for prosthetic implants coating. Nevertheless, its biocompatibility still has to be better understood. To do so, we employed several materials characterization techniques (SEM, AFM, micro-Raman spectroscopy) and cell culture assays using MG63 osteoblast-like and human bone marrow cells. Biochemical routines (MTT assays, Lowry's method, ALP activity) supported by SEM and confocal microscopy characterization were carried out. We used silicon nitride (Si3N4) substrates for NCD coatings based on a previous demonstration of the superior adhesion and tribological performance of these NCD coated ceramics. Results demonstrate an improved human osteoblast proliferation and the stimulation of differentiated markers, like ALP activity and matrix mineralization, compared with standard polystyrene tissue culture plates. The nanometric featuring of NCD, associated to its chemical affinity are key points for bone regeneration purposes.

Structural characterization of nanocrystalline cadmium sulphide powder prepared by solvent evaporation technique

Science.gov (United States)

Pandya, Samir; Tandel, Digisha; Chodavadiya, Nisarg

2018-05-01

CdS is one of the most important compounds in the II-VI group of semiconductor. There are numerous applications of CdS in the form of nanoparticles and nanocrystalline. Semiconductors nanoparticles (also known as quantum dots), belong to state of matter in the transition region between molecules and solids, have attracted a great deal of attention because of their unique electrical and optical properties, compared to bulk materials. In the field of optoelectronic, nanocrystalline form utilizes mostly in the field of catalysis and fluid technology. Considering these observations, presented work had been carried out, i.e. based on the nanocrystalline material preparation. In the present work CdS nano-crystalline powder was synthesized by a simple and cost effective chemical technique to grow cadmium sulphide (CdS) nanoparticles at 200 °C with different concentrations of cadmium. The synthesis parameters were optimized. The synthesized powder was structurally characterized by X-ray diffraction and particle size analyzer. In the XRD analysis, Micro-structural parameters such as lattice strain, dislocation density and crystallite size were analysed. The broadened diffraction peaks indicated nanocrystalline particles of the film material. In addition to that the size of the prepared particles was analyzed by particle size analyzer. The results show the average size of CdS particles ranging from 80 to 100 nm. The overall conclusion of the work can be very useful in the synthesis of nanocrystalline CdS powder.

Correlation of thermodynamics and grain growth kinetics in nanocrystalline metals

International Nuclear Information System (INIS)

Song Xiaoyan; Zhang Jiuxing; Li Lingmei; Yang Keyong; Liu Guoquan

2006-01-01

We investigated the correlation of thermodynamics and grain growth kinetics of nanocrystalline metals both theoretically and experimentally. A model was developed to describe the thermodynamic properties of nanograin boundaries, which could give reliable predictions in the destabilization characteristics of nanograin structures and the slowing down of grain growth kinetics at a constant temperature. Both the temperature-varying and isothermal nanograin growth behaviors in pure nanocrystalline Co were studied to verify the thermodynamic predictions. The experimental results showing that discontinuous nanograin growth takes place at a certain temperature and grain growth rate decreases monotonically with time confirm our thermodynamics-based description of nanograin growth characteristics. Therefore, we propose a thermodynamic viewpoint to explain the deviation of grain growth kinetics in nanocrystalline metals from those of polycrystalline materials

EXAFS and XRD studies of nanocrystalline cerium oxide: the effect of preparation method on the microstructure

International Nuclear Information System (INIS)

Savin, S.L.P.; Chadwick, A.V.; Smith, M.E.; O'Dell, L.A.

2007-01-01

There is considerable interest in nanocrystalline materials due to their unusual properties, such as enhanced ionic conductivity in the case of nanocrystalline ionic solids. This has potential commercial applications, particularly for oxide ion conductors. However, a detailed knowledge of the microstructure is important in fully understanding the novel properties exhibited by nanocrystalline materials. The final microstructure of a material is dependent on the preparation method used, for example, sol-gel and ball-milling methods are commonly used in the preparation of nanocrystalline oxides. Additionally, there is a problem in maintaining the materials in nanocrystalline form when they are subjected to elevated temperatures. We have been exploring strategies to restrict the growth of nanocrystalline oxides and have found that adding a small amount of an inert material, e.g. SiO 2 or Al 2 O 3 , is particularly effective. We will report XRD and EXAFS studies of nanocrystalline ceria prepared by sol-gel, sol-gel pinned and ball-milling methods and the effect of preparation method on the final microstructure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

Science.gov (United States)

Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

2012-06-01

Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

Nanocrystalline and ultrafine grain copper obtained by mechanical attrition

Directory of Open Access Journals (Sweden)

Rodolfo Rodríguez Baracaldo

2010-01-01

Full Text Available This article presents a method for the sample preparation and characterisation of bulk copper having grain size lower than 1 μm (ultra-fine grain and lower than 100 nm grain size (nanocrystalline. Copper is initially manufactured by a milling/alloying me- chanical method thereby obtaining a powder having a nanocrystalline structure which is then consolidated through a process of warm compaction at high pressure. Microstructural characterisation of bulk copper samples showed the evolution of grain size during all stages involved in obtaining it. The results led to determining the necessary conditions for achieving a wide range of grain sizes. Mechanical characterisation indicated an increase in microhardness to values of around 3.40 GPa for unconsolida- ted nanocrystalline powder. Compressivee strength was increased by reducing the grain size, thereby obtaining an elastic limit of 650 MPa for consolidated copper having a ~ 62 nm grain size.

Creep behavior of a nanocrystalline Fe-B-Si alloy

International Nuclear Information System (INIS)

Xiao, M.; Kong, Q.P.

1997-01-01

The research of nanocrystalline materials has attracted much attention in the world. In recent years, there have been several studies on their creep behavior. Among these, the authors have studied the tensile creep of a nanocrystalline Ni-P alloy (28 nm) at temperatures around 0.5 Tm (Tm is the melting point). The samples were prepared by the method of crystallization of amorphous ribbon. Based on the data of stress exponent and activation energy, they suggested that the creep was controlled by boundary diffusion; while the creep of the same alloy with a larger grain size (257 nm) was controlled by a different mechanism. In the present paper, the authors extend the research to the creep of a nanocrystalline Fe-B-Si alloy. The samples are also prepared by crystallization of amorphous ribbon. The samples such prepared have an advantage that the interfaces are naturally formed without artificial compaction and porosity

Microstructure characterization and cation distribution of nanocrystalline cobalt ferrite

International Nuclear Information System (INIS)

Abbas, Y.M.; Mansour, S.A.; Ibrahim, M.H.; Ali, Shehab E.

2011-01-01

Nanocrystalline cobalt ferrite has been synthesized using two different methods: ceramic and co-precipitation techniques. The nanocrystalline ferrite phase has been formed after 3 h of sintering at 1000 deg. C. The structural and microstructural evolutions of the nanophase have been studied using X-ray powder diffraction and the Rietveld method. The refinement result showed that the type of the cationic distribution over the tetrahedral and octahedral sites in the nanocrystalline lattice is partially an inverse spinel. The transmission electronic microscope analysis confirmed the X-ray results. The magnetic properties of the samples were characterized using a vibrating sample magnetometer. - Highlights: → The refinement result showed that the cationic distribution over the sites in the lattice is partially an inverse spinel. → The transmission electronic microscope analysis confirmed the X-ray results. → The magnetic properties of the samples were characterized using a vibrating sample magnetometer.

Strain rate sensitivity studies on bulk nanocrystalline aluminium by nanoindentation

Energy Technology Data Exchange (ETDEWEB)

Varam, Sreedevi; Rajulapati, Koteswararao V., E-mail: kvrse@uohyd.ernet.in; Bhanu Sankara Rao, K.

2014-02-05

Nanocrystalline aluminium powder synthesized using high energy ball milling process was characterized by X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The studies indicated the powder having an average grain size of ∼42 nm. The consolidation of the powder was carried out by high-pressure compaction using a uni-axial press at room temperature by applying a pressure of 1.5 GPa. The cold compacted bulk sample having a density of ∼98% was subjected to nanoindentation which showed an average hardness and elastic modulus values of 1.67 ± 0.09 GPa and 83 ± 8 GPa respectively at a peak force of 8000 μN and a strain rate of 10{sup −2} s{sup −1}. Achieving good strength along with good ductility is challenging in nanocrystalline metals. When enough sample sizes are not available to measure ductility and other mechanical properties as per ASTM standards, as is the case with nanocrystalline materials, nanoindentation is a very promising technique to evaluate strain rate sensitivity. Strain rate sensitivity is a good measure of ductility and in the present work it is measured by performing indentation at various loads with varying loading rates. Strain rate sensitivity values of 0.024–0.054 are obtained for nanocrystalline Al which are high over conventional coarse grained Al. In addition, Scanning Probe Microscopy (SPM) image of the indent shows that there is some plastically flown region around the indent suggesting that this nanocrystalline aluminium is ductile.

Size-dependent deformation behavior of nanocrystalline graphene sheets

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhi [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Huang, Yuhong [College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, Shaanxi (China); Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Sun, Yunjin [Faculty of Food Science and Engineering, Beijing University of Agriculture, Beijing Key Laboratory of Agricultural Product Detection and Control of Spoilage Organisms and Pesticide Residue, Beijing Laboratory of Food Quality and Safety, Beijing 102206 (China); Xu, Kewei, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Department of Physics and Opt-electronic Engineering, Xi’an University of Arts and Science, Xi’an 710065, Shaanxi (China); Chu, Paul K., E-mail: paul.chu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2015-08-15

Highlights: • MD simulation is conducted to study the deformation of nanocrystalline graphene. • Unexpectedly, the elastic modulus decreases with the grain size considerably. • But the fracture stress and strain are nearly insensitive to the grain size. • A composite model with grain domains and GBs as two components is suggested. - Abstract: Molecular dynamics (MD) simulation is conducted to study the deformation behavior of nanocrystalline graphene sheets. It is found that the graphene sheets have almost constant fracture stress and strain, but decreased elastic modulus with grain size. The results are different from the size-dependent strength observed in nanocrystalline metals. Structurally, the grain boundaries (GBs) become a principal component in two-dimensional materials with nano-grains and the bond length in GBs tends to be homogeneously distributed. This is almost the same for all the samples. Hence, the fracture stress and strain are almost size independent. As a low-elastic-modulus component, the GBs increase with reducing grain size and the elastic modulus decreases accordingly. A composite model is proposed to elucidate the deformation behavior.

Towards solar grade silicon: Challenges and benefits for low cost photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Pizzini, Sergio [Ned Silicon Spa, Via Th. Edison 6, 60027 Osimo (Ancona) (Italy)

2010-09-15

It is well known that silicon in its various structural configurations (single crystal, multicrystalline, amorphous, micro-nanocrystalline) supplies almost 90% of the substrates used in the photovoltaic industry. It is also known, since years, that the photovoltaic (PV) industry shows a marked growth trend, which demanded and demands a continuous, huge increase of the bulk silicon supply in the order of 30%/yr. In order to fulfill their today- and future needs, many companies worldwide took the decision to start the installation of many thousand tons/year plants, most of them using the Siemens process, some of them using the MG route, to produce the so called solar grade (SG) silicon. The advantages of the Siemens process are well known, as it provides ultrapure silicon, directly usable for growing either single crystalline Czochralski ingots or multicrystalline ingots using the directional solidification (DS) technique. The disadvantages are its high energetic cost (a minimum of 120 kWH/kg) and the possible losses of chlorinated gases in the atmosphere, with possible severe environmental problems. The advantages of the MG route are still potential, as there is no commercially available production of solar silicon as yet, and rely on its reduced energetic costs (a maximum of 25-30 kWh/kg) for a feedstock directly usable for growing multicrystalline ingots using the DS technique. The drawbacks of silicon of MG origin are its larger concentration of metallic impurities, as compared with the Siemens one, the higher B and P content, and the potentially high carbon content. The aim of this paper is to deal with some of the problems encountered so far with the silicon of MG origin with respect to the metallic and non-metallic impurities content, as well as to propose technologically feasible solar grade feedstock specifications. (author)

Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

Energy Technology Data Exchange (ETDEWEB)

Mohammadi, Majid; Ghasemi, Ali, E-mail: ali13912001@yahoo.com; Tavoosi, Majid

2016-12-01

Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3} powder mixtures with sufficient amount of CaH{sub 2} were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys can be successfully synthesized by the reduction reaction of Fe{sub 2}O{sub 3} and B{sub 2}O{sub 3} with CaH{sub 2} during mechanical alloying. The structure of produced Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys was a combination of Fe and Fe{sub 2}B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Directory of Open Access Journals (Sweden)

Jia Ge

2014-01-01

Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

Investigation of microstructure thermal evolution in nanocrystalline Cu

International Nuclear Information System (INIS)

Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

2011-01-01

The microstructure of nanocrystalline Cu prepared by compacting nanoparticles (50-60 nm in diameter) under high pressures has been studied by means of positron lifetime spectroscopy and X-ray diffraction. These nanoparticles were produced by two different methods. We found that there are order regions interior to the grains and disorder regions at the grain boundaries with a wide distribution of interatomic distances. The mean grain sizes of the nanocrystalline Cu samples decrease after being annealed at 900 o C and increase during aging at 180 o C, which are observed by X-ray diffraction, revealing that the atoms exchange between the two regions. The positron lifetime results clearly indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder grain growth when the samples age at 180 o C, and the vacancy clusters inside the disorder regions, which are related to Cu 2 O, need longer aging time to decompose. The disorder regions remain after the heat treatment in this work, in spite of the grain growth, which will be good for the samples keeping the properties of nanocrystalline material. -- Research highlights: → We use a digital positron lifetime spectrometer correlated with XRD to study the microstructure evolution of nanocrystalline Cu during thermal treatment. → An atomic scale microstructure of grain boundary is characterized. Further, the surface oxidation of the nanoparticles is considered. → The disorder regions remain after the heat treatment in this work, in spite of grain growth.

Critical currents and fields of disordered nanocrystalline superconductors

International Nuclear Information System (INIS)

Yavary, H.; Shahzamanian, M.A.; Rabbani, H.

2007-01-01

Full text: There is an enormous effort directed at increasing the upper critical field of the superconducting materials because this upper critical field provides a fundamental limit to the maximum field a magnet system can produce. High-energy particle accelerators and medical resonance imaging body scanners are limited by the for NbTi (10 T). Gigahertz class nuclear-magnetic-resonance and high field laboratory magnets are limited by for Nb 3 Sn (23 T) [1]. However, the values of critical current density are too low for industrial use, possibly because of degraded or nonsuperconducting phases, such as MoS 2 or Mo 2 S 3 , at the grain boundaries or because the pinning site density is not high enough. It has long been known that decreasing the grain size of low-temperature superconducting (LTS) materials, such as Nb 3 Sn, increases the density of flux pinning sites and hence. Nanocrystalline materials are characterized by ultrafine grains and a high density of grain boundaries [2]. Hence nanocrystalline materials can exhibit unusual physical, chemical, and mechanical properties with respect to conventional polycrystalline materials. The purpose of this paper is to investigate the structure of currents and fields in disordered nanocrystalline superconducting materials by the use of quasiclassical many body techniques. The Keldish Greens functions are used to calculate the current density of the system. Since the disorder and microstructure of these nanocrystalline materials are on a sufficiently short length scale as to increase both the density of pinning site and the upper critical field. (authors)

A new dental powder from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons

International Nuclear Information System (INIS)

Do-Minh, N.; Le-Thi, C.; Nguyen-Anh, S.

2003-01-01

A new non-gamma-two dental powder has been developed from nanocrystalline melt-spun Ag-Sn-Cu alloy ribbons. The amalgam made from this powder exhibits excellent properties for dental filling. The nanocrystalline microstructure was found for the first time in as-spun and heat treated Ag(27-28)Sn(9-32) Cu alloy ribbons, using X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy. As-spun ribbons exhibited a multi-phase microstructure with preferred existence of β (Ag 4 Sn) phase formed during rapid solidification (RS) due to supersaturating of copper (Cu) atoms and homogenous nanostructure with subgrain size of about (40-50) nm, which seems to be developed during RS process and can be caused by eutectic reaction of the Ag 3 Sn/Ag 4 Sn-Cu 3 Sn system. In heat treated ribbons the clustering of Cu atoms was always favored and stable in an ageing temperature and time interval determined by Cu content. The heat treatment led to essential changes of subgrain morphology, resulted in the appearance of large-angle boundaries with fine Cu 3 Sn precipitates and forming typical recrystallization twins. Such a microstructure variation in melt-spun ribbons could eventually yield enhanced technological, clinical and physical properties of the dental products, controlled by the ADA Specification N deg 1 and reported before. Thus, using the rapid solidification technique a new non-gamma-two dental material of high quality, nanocrystalline ribbon powder, can be produced. Copyright (2003) AD-TECH - International Foundation for the Advancement of Technology Ltd

Transformation of Goethite to Hematite Nanocrystallines by High Energy Ball Milling

Directory of Open Access Journals (Sweden)

O. M. Lemine

2014-01-01

Full Text Available α-Fe2O3 nanocrystallines were prepared by direct transformation via high energy ball milling treatment for α-FeOOH powder. X-ray diffraction, Rietveld analysis, TEM, and vibrating sample magnetometer (VSM are used to characterize the samples obtained after several milling times. Phase identification using Rietveld analysis showed that the goethite is transformed to hematite nanocrystalline after 40 hours of milling. HRTEM confirm that the obtained phase is mostly a single-crystal structure. This result suggested that the mechanochemical reaction is an efficient way to prepare some iron oxides nanocrystallines from raw materials which are abundant in the nature. The mechanism of the formation of hematite is discussed in text.

Implantation of silicon dioxide-based nanocrystalline hydroxyapatite and pure phase beta-tricalciumphosphate bone substitute granules in caprine muscle tissue does not induce new bone formation

Directory of Open Access Journals (Sweden)

Ghanaati Shahram

2013-01-01

Full Text Available Abstract Background Osteoinductive bone substitutes are defined by their ability to induce new bone formation even at heterotopic implantation sites. The present study was designed to analyze the potential osteoinductivity of two different bone substitute materials in caprine muscle tissue. Materials and methods One gram each of either a porous beta-tricalcium phosphate (β-TCP or an hydroxyapatite/silicon dioxide (HA/SiO2-based nanocrystalline bone substitute material was implanted in several muscle pouches of goats. The biomaterials were explanted at 29, 91 and 181 days after implantation. Conventional histology and special histochemical stains were performed to detect osteoblast precursor cells as well as mineralized and unmineralized bone matrix. Results Both materials underwent cellular degradation in which tartrate-resistant acid phosphatase (TRAP-positive osteoclast-like cells and TRAP-negative multinucleated giant cells were involved. The ß-TCP was completely resorbed within the observation period, whereas some granules of the HA-groups were still detectable after 180 days. Neither osteoblasts, osteoblast precursor cells nor extracellular bone matrix were found within the implantation bed of any of the analyzed biomaterials at any of the observed time points. Conclusions This study showed that ß-TCP underwent a faster degradation than the HA-based material. The lack of osteoinductivity for both materials might be due to their granular shape, as osteoinductivity in goat muscle has been mainly attributed to cylindrical or disc-shaped bone substitute materials. This hypothesis however requires further investigation to systematically analyze various materials with comparable characteristics in the same experimental setting.

Characterization of amorphous and nanocrystalline carbon films

International Nuclear Information System (INIS)

Chu, Paul K.; Li Liuhe

2006-01-01

Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

Hot pressing of nanocrystalline tantalum using high frequency induction heating and pulse plasma sintering

Science.gov (United States)

Jakubowicz, J.; Adamek, G.; Sopata, M.; Koper, J. K.; Siwak, P.

2017-12-01

The paper presents the results of nanocrystalline powder tantalum consolidation using hot pressing. The authors used two different heating techniques during hot pressing: high-frequency induction heating (HFIH) and pulse plasma sintering (PPS). A comparison of the structure, microstructure, mechanical properties and corrosion resistance of the bulk nanocrystalline tantalum obtained in both techniques was performed. The nanocrystalline powder was made to start from the microcrystalline one using the high-energy ball milling process. The nanocrystalline powder was hot-pressed at 1000 °C, whereas, for comparison, the microcrystalline powder was hot pressed up to 1500 °C for proper consolidation. The authors found that during hot pressing, the powder partially reacts with the graphite die covered by boron nitride, which facilitated punches and powder displacement in the die during densification. Tantalum carbide and boride in the nanocrystalline material was found, which can improve the mechanical properties. The hardness of the HFIH and PPS nanocrystalline tantalum was as high as 625 and 615 HV, respectively. The microstructure was more uniform in the PPS nanomaterial. The corrosion resistance in both cases deteriorated, in comparison to the microcrystalline material, while the PPS material corrosion resistance was slightly better than that of the HFIH one.

UV-laser treatment of nanodiamond seeds - a valuable tool for modification of nanocrystalline diamond films properties

International Nuclear Information System (INIS)

Vlček, J; Fitl, P; Vrňata, M; Fekete, L; Taylor, A; Fendrych, F

2013-01-01

This work aimed to study the UV-laser treatment of precursor (i.e. nanodiamond (ND) seeds on silicon substrates) and its influence on the properties of grown nanocrystalline diamond (NCD) films. Pulsed Nd:YAG laser operating at the fourth harmonic frequency (laser fluence E L = 250 mJ cm -2 , pulse duration 5 ns) was used as a source, equipped with an optical system for focusing laser beam onto the sample, allowing exposure of a local spot and horizontal patterning. The variable parameters were: number of pulses (from 5 to 400) and the working atmosphere (He, Ar and O 2 ). Ablation and/or graphitization of seeded nanodiamond particles were observed. Further the microwave plasma-enhanced chemical vapour deposition was employed to grow NCD films on exposed and non-exposed areas of silicon substrates. The size, shape and density distribution of laser-treated nanodiamond seeds were observed by atomic force microscopy (AFM) and their chemical composition by x-ray photoelectron spectroscopy (XPS) analysis. The resulting NCD films (uniform thickness of 400 nm) were characterized by: Raman spectroscopy to analyse occurrence of graphitic phase, and AFM to observe morphology and surface roughness. The highest RMS roughness (∼85 nm) was achieved when treating the precursor in He atmosphere. Horizontal microstructures of diamond films were fabricated.

Production and Quality Assurance of Detector Modules for the LHCb Silicon Tracker

CERN Document Server

Volyanskyy, D; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Sakhelashvili, T; Steiner, S; Straumann, U; Van Tilburg, J; Vollhardt, A; Wenger, A

2007-01-01

The LHCb experiment, which is currently under construction at the Large Hadron Collider~(CERN, Geneva), is designed to study $CP$ violation and find rare decays in the $B$ meson system. To achieve the physics goals the LHCb detector must have excellent tracking performance. An important element of the LHCb tracking system is the Silicon Tracker, which covers a sensitive surface of about 12~m$^2$ with silicon microstrip detectors and includes about 272k readout channels. It uses up to 132~cm long detector modules with readout strips of up to 38~cm in length and up to 57~cm long Kapton interconnects in between sensors and readout hybrids. The production of detector modules has been completed recently and the detector is currently under installation. A rigorous quality assurance programme has been performed to ensure that the detector modules meet the mechanical and electrical requirements and study their various characteristics. In this paper, the detector design, the module production steps, and the module qua...

Texture-dependent twin formation in nanocrystalline thin Pd films

International Nuclear Information System (INIS)

Wang, B.; Idrissi, H.; Shi, H.; Colla, M.S.; Michotte, S.; Raskin, J.P.; Pardoen, T.; Schryvers, D.

2012-01-01

Nanocrystalline Pd films were produced by electron-beam evaporation and sputter deposition. The electron-beam-evaporated films reveal randomly oriented nanograins with a relatively high density of growth twins, unexpected in view of the high stacking fault energy of Pd. In contrast, sputter-deposited films show a clear 〈1 1 1〉 crystallographic textured nanostructure without twins. These results provide insightful information to guide the generation of microstructures with enhanced strength/ductility balance in high stacking fault energy nanocrystalline metallic thin films.

Topological characterization of nanocrystalline cellulose reinforced Poly (lactic acid) and Poly-(3-hydroxybutyrate-co-3-hydroxyvalerate) bionanocomposites

Science.gov (United States)

Bhat, A. H.; Dasan, Y. K.; Khan, Ihsan Ullah; Ahmad, Faiz; Ayoub, Muhammad

2016-11-01

This study was conducted to evaluate the morphological and barrier properties of nanocrystalline cellulose reinforced Poly (lactic acid) and Poly-(3-hydroxybutyrate-co-3-hydroxyvalerate) bionanocomposites. Nanocrystalline cellulose was isolated from waste oil palm empty fruit bunch fiber using Sulphuric acid hydrolysis. Chemical modifications of nanocrystalline cellulose was performed to allow good compatibilization between fiber and the polymer matrices and also to improve dispersion of fillers. Bionanocomposite materials were produced from these nanocrystalline cellulose reinforced Poly (lactic acid) and Poly-(3-hydroxybutyrate-co-3-hydroxyvalerate) using solvent casting and evaporation techniques. The properties of extracted nanocrystalline cellulose were examined using FT-IR spectroscopy, X-ray diffractometer, TEM and AFM. Besides that, the properties of bionanocomposites were examined through FESEM and oxygen permeability properties analysis. Better barrier and morphological properties were obtained for nanocrystalline cellulose reinforced bionanocomposites than for neat polymer blend.

Electrodeposition and characterization of nanocrystalline CoNiFe films

Energy Technology Data Exchange (ETDEWEB)

Chen, Y.; Wang, Q.P. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cai, C. [School of Chemistry and chemical engineering, Ningxia University, Yinchuan 750021 (China); Yuan, Y.N. [Department of Materials and Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cao, F.H. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, Z., E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, J.Q. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

2012-02-29

Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} films have been fabricated using cyclic voltammetry technique from the solutions containing sulfate, then characterized by scanning electron microscopy, X-ray diffraction and vibrating sample magnetometer. Meanwhile, Electrochemical Impedance Spectroscopy technique has been employed to probe into the nucleation/growth behavior of Co{sub 45}Ni{sub 10}Fe{sub 24} films. The results show that, the obtained Co{sub 45}Ni{sub 10}Fe{sub 24} film possesses low coercivity of 973.3 A/m and high saturation magnetic flux density of 1.59 Multiplication-Sign 10{sup 5} A/m. Under the experimental conditions, the nucleation/growth process of Co{sub 45}Ni{sub 10}Fe{sub 24} films is mainly under activation control. With the increase of the applied cathodic potential bias, the charge transfer resistance for CoNiFe deposition decreases exponentially. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} film is obtained using cyclic voltammetry technique. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses low coercivity of 973.3 A/m. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses high saturation magnetic flux density. Black-Right-Pointing-Pointer The nucleation/growth process of CoNiFe films is mainly under activation control. Black-Right-Pointing-Pointer The charge transfer resistance for CoNiFe deposition decreases exponentially.

Radiation influence on properties of nanocrystalline alloy

International Nuclear Information System (INIS)

Holkova, D.; Sitek, J.; Novak, P.; Dekan, J.

2016-01-01

Our work is focused on the studied of structural changes amorphous and nanocrystalline alloys after irradiation with electrons. For the analysis of these alloy we use two spectroscopic methods: Moessbauer spectroscopy and XRD. Measurements of nanocrystalline (Fe 3 Ni 1 ) 81 Nb 7 B 12 samples before and after electrons irradiation by means of Moessbauer spectroscopy and XRD showed that the electrons causes changes in magnetic structure which is reflected changes of direction of net magnetic moment. Structural changes occurs in the frame of error indicated by both spectroscopic methods. We can confirm that this kind alloys a resistive again electrons irradiation up to doses of 4 MGy. We observed in this frame only beginning of the radiation damage. (authors)

A computation model for the corrosion resistance of nanocrystalline zirconium metal

International Nuclear Information System (INIS)

Zhang Xiyan; Shi Minghua; Liu Nianfu; Wei Yiming; Li Cong; Qiu Shaoyu; Zhang Qiang; Zhang Pengcheng

2007-01-01

In this paper a computation model of corrosion rate-grain size of nanocrystalline and ultra-fine zirconium has been presented. The model is based on the Wagner's theory and the electron theory of solids. The conductivity, electronic mean free path and grain size of metal were considered. By this model, the corrosion rate of zirconium metal under different temperature was computed. The results show that the corrosion weight gain and rate constant of nanocrystalline zirconium is lower than that of zirconium with coarse grain size. And the corrosion rate constant and weight gain of nanocrystalline zirconium metal decrease with the decrease of grain size. So the refinement of grain size can remarkably improve the corrosion resistance of zirconium metal. (authors)

High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN

DEFF Research Database (Denmark)

Jorgensen, J.E.; Jakobsen, J.M.; Jiang, Jianzhong

2003-01-01

Bulk- and nanocrystalline GaN have been studied by high-pressure energy-dispersive X-ray diffraction. Pressure-induced structural phase transitions from the wurtzite to the NaCl phase were observed in both materials. The transition pressure was found to be 40 GPa for the bulk-crystalline GaN, while...... the wurtzite phase was retained up to 60 GPa in the case of nanocrystalline GaN. The bulk moduli for the wurtzite phases were determined to be 187 ( 7) and 319 ( 10) GPa for the bulk- and nanocrystalline phases, respectively, while the respective NaCl phases were found to have very similar bulk moduli [ 208...

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

About the optical properties of oxidized black silicon structures

Science.gov (United States)

Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

2017-02-01

The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

Layered structure in core–shell silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

2014-10-15

Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

Microstructure characterization of nanocrystalline TiC synthesized by mechanical alloying

International Nuclear Information System (INIS)

Ghosh, B.; Pradhan, S.K.

2010-01-01

Nanocrystalline TiC is produced by mechanical milling the stoichiometric mixture of α-Ti and graphite powders at room temperature under argon atmosphere within 35 min of milling through a self-propagating combustion reaction. Microstructure characterization of the unmilled and ball-milled samples was done by both X-ray diffraction and electron microscopy. It reveals the fact that initially graphite layers were oriented along and in the course of milling, thin graphite layers were distributed evenly among the grain boundaries of α-Ti particles. Both α-Ti and TiC lattices contain stacking faults of different kinds. The grain size distribution obtained from the Rietveld's method and electron microscopy studies ensure that nanocrystalline TiC particles with almost uniform size (∼13 nm) can be prepared by mechanical alloying technique. The result obtained from X-ray analysis corroborates well with the microstructure characterization of nanocrystalline TiC by electron microscopy.

Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

International Nuclear Information System (INIS)

Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

2012-01-01

Nanocrystalline Zn prepared by compacting nanoparticles with mean grain size about 55 nm at 15 MPa has been studied by positron lifetime spectroscopy. For the bulk Zn sample, the vacancy defect is annealed out at about 350 °C, but for the nanocrystalline Zn sample, the vacancy cluster in grain boundaries is quite difficult to be annealed out even at very high temperature (410 °C). In the grain boundaries of nanocrystalline Zn, the small free volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ 1 ). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ av ), which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. This stabilization is very important for the nanocrystalline materials using as radiation resistant materials.

Magnetic behavior of nanocrystalline nickel ferrite

International Nuclear Information System (INIS)

Nathani, H.; Gubbala, S.; Misra, R.D.K.

2005-01-01

In the previous papers [R.D.K. Misra, A. Kale, R.S. Srivatsava, O. Senkov, Mater. Sci. Technol. 19 (2003) 826; R.D.K. Misra, A. Kale, B. Hooi, J.Th. DeHosson, Mater. Sci. Technol. 19 (2003) 1617; A. Kale, S. Gubbala, R.D.K. Misra, J. Magn. Magn. Mater. 277 (2004) 350; S. Gubbala, H. Nathani, K. Koizol, R.D.K. Misra, Phys. B 348 (2004) 317; R.D.K. Misra, S. Gubbala, A. Kale, W.F. Egelhoff, Mater. Sci. Eng. B. 111 (2004) 164], we reported the synthesis, structural characterization and magnetic behavior of nanocrystalline ferrites of inverse and mixed spinel structure made by reverse micelle technique that enabled a narrow particle size distribution to be obtained. In the present paper, the reverse micelle approach has been extended to synthesize nanocrystalline ferrites with varying surface roughness of 8-18 A (the surface roughness was measured by atomic force microscopy) and the magnetic behavior studied by SQUID magnetometer. Two different kinds of measurement were performed: (a) zero-field cooling (ZFC) and field cooling (FC) magnetization versus temperature measurements and (b) magnetization as a function of applied field. The analysis of magnetic measurement suggests significant influence of surface roughness of particles on the magnetic behavior. While the superparamagnetic behavior is retained by the nanocrystalline ferrites of different surface roughness at 300 K, the hysteresis loop at 2 K becomes non-squared and the coercivity increases with increase in surface roughness. This behavior is discussed in terms of broken bonds and degree of surface spin disorder

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

Energy Technology Data Exchange (ETDEWEB)

Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

2016-04-11

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

XRD and HREM studies of nanocrystalline Cu and Pd

International Nuclear Information System (INIS)

Nieman, G.W.; Weertmen, J.R.; Siegel, R.W.

1991-01-01

Consolidated powders of nanocrystalline Cu and Pd have been studied by x-ray diffraction (XRD) and high resolution electron microscopy (HREM) as part of an investigation of the mechanical behavior of nanocrystalline pure metals. XRD line broadening measurements were made to estimate rain size, qualitative grain size distribution and average long range strains in a number of samples. Mean grain sized range from 4-60 nm and have qualitatively narrow grain size distributions. Long range lattice strains are of the order of 0.2-3% in consolidated samples. These strains apparently persist and even increase in Cu samples after annealing at 0.35 Tm (498K) for 2h, accompanied by an apparent increase in grain size of ≥2x. Grain size, grain size distribution width and internal strains vary somewhat among samples produced under apparently identical processing conditions. HREM studies show that twins, stacking faults and low-index facets are abundant in as-consolidated nanocrystalline Cu samples. In this paper methodology, results and analysis of XRD and HREM experiments are presented

Formation of local nanocrystalline structure in a boron steel induced by electropulsing

International Nuclear Information System (INIS)

Ma, Bingdong; Zhao, Yuguang; Ma, Jun; Guo, Haichao; Yang, Qing

2013-01-01

Highlights: ► The local NC structures in the uniform size of ∼15 nm were obtained by electropulsing. ► The NC structures were made up of γ-Fe without any other phases coexisting. ► The reduction in nucleation barrier of the γ-Fe helped form the local γ-Fe NC structure. ► The steel consisting of the lath martensitic and the γ-Fe nanocrystalline structure exhibits high mechanical properties. - Abstract: Nanocrystalline γ-Fe was obtained locally in a cold-rolled boron steel as a result of transient high-energy electropulsing. The nano-grains of γ-Fe were uniformly about 15 nm in size. No phases other than γ-Fe have been found in the nanocrystalline structure. It is believed that the pulse current enhances the nucleation rate of γ-Fe phase during the phase transformation from α-Fe to γ-Fe, resulting in the formation of local nanostructure. Moreover, in this study the steel consisting of the lath martensitic and the γ-Fe nanocrystalline structure exhibits high mechanical properties.

Direct separation of short range order in intermixed nanocrystalline and amorphous phases

International Nuclear Information System (INIS)

Frenkel, Anatoly I.; Kolobov, Alexander V.; Robinson, Ian K.; Cross, Julie O.; Maeda, Yoshihito; Bouldin, Charles E.

2002-01-01

Diffraction anomalous fine-structure (DAFS) and extended x-ray absorption fine-structure (EXAFS) measurements were combined to determine short range order (SRO) about a single atomic type in a sample of mixed amorphous and nanocrystalline phases of germanium. EXAFS yields information about the SRO of all Ge atoms in the sample, while DAFS determines the SRO of only the ordered fraction. We determine that the first-shell distance distribution is bimodal; the nanocrystalline distance is the same as the bulk crystal, to within 0.01(2) A ring , but the mean amorphous Ge-Ge bond length is expanded by 0.076(19) Angstrom. This approach can be applied to many systems of mixed amorphous and nanocrystalline phases

Surface Properties of a Nanocrystalline Fe-Ni-Nb-B Alloy After Neutron Irradiation

Science.gov (United States)

Pavùk, Milan; Sitek, Jozef; Sedlačková, Katarína

2014-09-01

The effect of neutron radiation on the surface properties of the nanocrystalline (Fe0.25Ni0.75)81Nb7B12 alloy was studied. Firstly, amorphous (Fe0.25Ni0.75)81Nb7B12 ribbon was brought by controlled annealing to the nanocrystalline state. After annealing, the samples of the nanocrystalline ribbon were irradiated in a nuclear reactor with neutron fluences of 1×1016cm-2 and 1 × 1017cm-2 . By utilizing the magnetic force microscopy (MFM), topography and a magnetic domain structure were recorded at the surface of the ribbon-shaped samples before and after irradiation with neutrons. The results indicate that in terms of surface the nanocrystalline (Fe0.25Ni0.75)81Nb7B12 alloy is radiation-resistant up to a neutron fluence of 1 × 1017cm-2 . The changes in topography observed for both irradiated samples are discussed

Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding

Science.gov (United States)

Lebedev, V.; Lisec, T.; Yoshikawa, T.; Reusch, M.; Iankov, D.; Giese, C.; Žukauskaitė, A.; Cimalla, V.; Ambacher, O.

2017-06-01

In this work, the adhesive wafer bonding of diamond thin films onto 8″ silicon substrates is reported. In order to characterize bonded nano-crystalline diamond layers, vibrometry and interferometry studies of micro-fabricated flexural beam and disk resonators were carried out. In particular, surface topology along with resonant frequencies, eigenmodes and mechanical quality factors were recorded and analyzed in order to obtain physical parameters of the transferred films. The vibration properties of the bonded resonators were compared to those fabricated directly on 3″ silicon substrates.

Paramagnetic centers in nanocrystalline TiC/C system

International Nuclear Information System (INIS)

Guskos, N.; Bodziony, T.; Maryniak, M.; Typek, J.; Biedunkiewicz, A.

2008-01-01

Electron paramagnetic resonance is applied to study the defect centers in nanocrystalline titanium carbide dispersed in carbon matrix (TiC x /C) synthesized by the non-hydrolytic sol-gel process. The presence of Ti 3+ paramagnetic centers is identified below 120 K along with a minor contribution from localized defect spins coupled with the conduction electron system in the carbon matrix. The temperature dependence of the resonance intensity of the latter signal indicates weak antiferromagnetic interactions. The presence of paramagnetic centers connected with trivalent titanium is suggested to be the result of chemical disorder, which can be further related to the observed anomalous behavior of conductivity, hardness, and corrosion resistance of nanocrystalline TiC x /C

Production of nanocrystalline metal powders via combustion reaction synthesis

Science.gov (United States)

Frye, John G.; Weil, Kenneth Scott; Lavender, Curt A.; Kim, Jin Yong

2017-10-31

Nanocrystalline metal powders comprising tungsten, molybdenum, rhenium and/or niobium can be synthesized using a combustion reaction. Methods for synthesizing the nanocrystalline metal powders are characterized by forming a combustion synthesis solution by dissolving in water an oxidizer, a fuel, and a base-soluble, ammonium precursor of tungsten, molybdenum, rhenium, or niobium in amounts that yield a stoichiometric burn when combusted. The combustion synthesis solution is then heated to a temperature sufficient to substantially remove water and to initiate a self-sustaining combustion reaction. The resulting powder can be subsequently reduced to metal form by heating in a reducing gas environment.

Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

OpenAIRE

Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

2008-01-01

Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Effects of oxide distributed in grain boundaries on microstructure stability of nanocrystalline metals

Science.gov (United States)

Zhou, Kai; Li, Hui; Biao Pang, Jin; Wang, Zhu

2013-06-01

Nanocrystalline copper and zinc prepared by high-pressure compaction method have been studied by positron lifetime spectroscopy associated with X-ray diffraction. For nanocrystalline Cu, mean grain sizes of the samples decrease after being annealed at 900 °C and increase during aging at 180 °C, revealing that the atoms exchange between the two regions. The positron lifetime results indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder the grain growth during the ageing at 180 °C, and the vacancy clusters inside the disorder regions which are related to Cu2O need longer aging time to decompose. In the case of nanocrystalline Zn, the open volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ1). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τav) during the annealing, which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. For both nanocrystalline copper and zinc, the oxides in grain boundaries enhance the thermal stability of the microstucture, in spite of their different crystal structures. This effect is very important for the nanocrystalline materials using as radiation resistant materials.

Effects of oxide distributed in grain boundaries on microstructure stability of nanocrystalline metals

International Nuclear Information System (INIS)

Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

2013-01-01

Nanocrystalline copper and zinc prepared by high-pressure compaction method have been studied by positron lifetime spectroscopy associated with X-ray diffraction. For nanocrystalline Cu, mean grain sizes of the samples decrease after being annealed at 900 °C and increase during aging at 180 °C, revealing that the atoms exchange between the two regions. The positron lifetime results indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder the grain growth during the ageing at 180 °C, and the vacancy clusters inside the disorder regions which are related to Cu 2 O need longer aging time to decompose. In the case of nanocrystalline Zn, the open volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ 1 ). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ av ) during the annealing, which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. For both nanocrystalline copper and zinc, the oxides in grain boundaries enhance the thermal stability of the microstucture, in spite of their different crystal structures. This effect is very important for the nanocrystalline materials using as radiation resistant materials.

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Vibrational thermodynamics of Fe90Zr7B3 nanocrystalline alloy from nuclear inelastic scattering

DEFF Research Database (Denmark)

Stankov, S.; Miglierini, M.; Chumakov, A. I.

2010-01-01

Recently we determined the iron-partial density of vibrational states (DOS) of nanocrystalline Fe(90)Zr(7)B(3) (Nanoperm), synthesized by crystallization of an amorphous precursor, for various stages of nanocrystallization separating the DOS of the nanograins from that of the interfaces [S. Stank......, vibrational entropy, and lattice specific heat as the material transforms from amorphous, through nanocrystalline, to fully crystallized state. The reported results shed new light on the previously observed anomalies in the vibrational thermodynamics of nanocrystalline materials....

Engineering of giant magnetoimpedance effect of amorphous and nanocrystalline microwires

Directory of Open Access Journals (Sweden)

V. Zhukova

2016-12-01

Full Text Available We present our studies of the factors affecting soft magnetic properties and giant magnetoimpedance effect in thin amorphous and nanocrystalline microwires. We showed that the magnetoelastic anisotropy is one of the most important parameters that determine magnetic softness and GMI effect of glass-coated microwires  and annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Considerable magnetic softening and increasing of the GMI effect is observed in Fe-rich nanocrystalline FINEMET-type glass-coated microwires after the nanocrystallization.

Atomic-scale simulations of the mechanical deformation of nanocrystalline metals

DEFF Research Database (Denmark)

Schiøtz, Jakob; Vegge, Tejs; Di Tolla, Francesco

1999-01-01

that the main deformation mode is sliding in the grain boundaries through a large number of uncorrelated events, where a few atoms (or a few tens of atoms) slide with respect to each other. Little dislocation activity is seen in the grain interiors. The localization of the deformation to the grain boundaries......Nanocrystalline metals, i.e., metals in which the grain size is in the nanometer range, have a range of technologically interesting properties including increased hardness and yield strength. We present atomic-scale simulations of the plastic behavior of nanocrystalline copper. The simulations show...

Formation of nanocrystalline MgB sub 2 under high pressure

CERN Document Server

Sun, L; Kikegawa, T; Cao, L; Zhan, Z; Wu, Q; Wu, X; Wang, W

2002-01-01

The microstructural features of MgB sub 2 at ambient pressure and high pressure have been investigated by means of in situ synchrotron radiation x-ray diffraction and transmission electron microscopy (TEM). The x-ray diffraction measurements indicated that nanocrystalline MgB sub 2 formed in the pressure range of 26.3-30.2 GPa. TEM investigations reveal complex structure domains with evident lattice distortion in the relevant samples. The superconductivity of nanocrystalline MgB sub 2 was measured and compared with that of the starting sample of MgB sub 2.

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

Science.gov (United States)

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

Nanocrystalline electrodeposited Ni-Mo-C cathodes for hydrogen production

International Nuclear Information System (INIS)

Hashimoto, K.; Sasaki, T.; Meguro, S.; Asami, K.

2004-01-01

Tailoring active nickel alloy cathodes for hydrogen evolution in a hot concentrated hydroxide solution was attempted by electrodeposition. The carbon addition to Ni-Mo alloys decreased the nanocrystalline grain size and remarkably enhanced the activity for hydrogen evolution, changing the mechanism of hydrogen evolution. The Tafel slope of hydrogen evolution was about 35 mV per decade. This suggested that the rate-determining step is desorption of adsorbed hydrogen atoms by recombination. As was distinct from the binary Ni-Mo alloys, after open circuit immersion, the overpotential, that is, the activity of nanocrystalline Ni-Mo-C alloys for hydrogen evolution was not changed, indicating the sufficient durability in the practical electrolysis

An investigation into the room temperature mechanical properties of nanocrystalline austenitic stainless steels

International Nuclear Information System (INIS)

Eskandari, Mostafa; Zarei-Hanzaki, Abbas; Abedi, Hamid Reza

2013-01-01

Highlights: ► Strength of nanocrystalline specimens follows a trend of a remarkable rise along with a small drop in ductility in comparison to the coarse-grained one. ► Universal correlation of linear type (UTS = mτ max ) between shear punch test data and the tensile strength may be unreliable for the nanocrystalline materials. ► Actual relation between the maximum shear and ultimate tensile strength follows an empirical formula of UTS=0.013τ max 2 -25.62τ max +13049. -- Abstract: The present work has been conducted to evaluate the mechanical properties of nanostructured 316L and 301 austenitic stainless steels. The nanocrystalline structures were produced through martensite treatment which includes cold rolling followed by annealing treatment. The effect of equivalent rolling strain and annealing parameters on the room temperature mechanical behavior of the experimental alloys have been studied using the shear punch testing technique. The standard uniaxial tension tests were also carried out to adapt the related correlation factors. The microstructures and the volume fraction of phases were characterized by transmission electron microscopy and feritscopy methods, respectively. The results indicate that the strength of nanocrystalline specimens remarkably increases, but the ductility in comparison to the coarse-grained one slightly decreases. In addition the strength of nanocrystalline specimens has been increased by decreasing the annealing temperature and increasing the equivalent rolling strain. The analysis of the load–displacement data has also disclosed that the universal correlation of linear type (UTS = mτ max ) between shear punch test data and the tensile strength is somehow unreliable for the nanocrystalline materials. The results suggest that the actual relation between the maximum shear strength and ultimate tensile strength follows a second order equation of type UTS=aτ max 2 -bτ max +c.

Influence of grain boundaries on elasticity and thermal conductivity of nanocrystalline diamond films

International Nuclear Information System (INIS)

Mohr, Markus; Daccache, Layal; Horvat, Sebastian; Brühne, Kai; Jacob, Timo; Fecht, Hans-Jörg

2017-01-01

Diamond combines several outstanding material properties such as the highest thermal conductivity and highest elastic moduli of all materials. This makes diamond an interesting candidate for a multitude of applications. Nonetheless, nanocrystalline diamond films, layers and coatings, usually show properties different to those of single crystalline diamond. This is usually attributed to the larger volume fraction of the grain boundaries with atomic structure different from the single crystal. In this work we measured Young's modulus and thermal conductivity of nanocrystalline diamond films with average grain sizes ranging from 6 to 15 nm. The measured thermal conductivities are modeled considering the thermal boundary conductance between grains as well as a grain size effect on the phonon mean free path. We make a comparison between elastic modulus and thermal boundary conductance of the grain boundaries G_k for different nanocrystalline diamond films. We conclude that the grain boundaries thermal boundary conductance G_k is a measure of the cohesive energy of the grain boundaries and therefore also of the elastic modulus of the nanocrystalline diamond films.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Isolation of bacterial cellulose nanocrystalline from pineapple peel waste: Optimization of acid concentration in the hydrolysis method

Science.gov (United States)

Anwar, Budiman; Rosyid, Nurul Huda; Effendi, Devi Bentia; Nandiyanto, Asep Bayu Dani; Mudzakir, Ahmad; Hidayat, Topik

2016-02-01

Isolation of needle-shaped bacterial cellulose nanocrystalline with a diameter of 16-64 nm, a fiber length of 258-806 nm, and a degree of crystallinity of 64% from pineapple peel waste using an acid hydrolysis process was investigated. Experimental showed that selective concentration of acid played important roles in isolating the bacterial cellulose nanocrystalline from the cellulose source. To achieve the successful isolation of bacterial cellulose nanocrystalline, various acid concentrations were tested. To confirm the effect of acid concentration on the successful isolation process, the reaction conditions were fixed at a temperature of 50°C, a hydrolysis time of 30 minutes, and a bacterial cellulose-to-acid ratio of 1:50. Pineapple peel waste was used as a model for a cellulose source because to the best of our knowledge, there is no report on the use of this raw material for producing bacterial cellulose nanocrystalline. In fact, this material can be used as an alternative for ecofriendly and cost-free cellulose sources. Therefore, understanding in how to isolate bacterial cellulose nanocrystalline from pineapple peel waste has the potential for large-scale production of inexpensive cellulose nanocrystalline.

Preparation of nanocrystalline Ni doped ZnS thin films by ammonia-free chemical bath deposition method and optical properties

Energy Technology Data Exchange (ETDEWEB)

Sahraei, Reza, E-mail: r.sahraei@ilam.ac.ir; Darafarin, Soraya

2014-05-01

Nanocrystalline Ni doped ZnS thin films were deposited on quartz, silicon, and glass substrates using chemical bath deposition method in a weak acidic solution containing ethylenediamine tetra acetic acid disodium salt (Na{sub 2}EDTA) as a complexing agent for zinc ions and thioacetamide (TAA) as a sulfide source at 80 °C. The films were characterized by energy-dispersive X-ray spectrometer (EDX), inductively coupled plasma atomic emission spectroscopy (ICP-AES), Fourier transform-infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectrophotometry, and photoluminescence (PL) spectroscopy. UV–vis transmission data showed that the films were transparent in the visible region. The X-ray diffraction analysis showed a cubic zinc blend structure. FE-SEM revealed a homogeneous morphology and dense nanostructures. The PL spectra of the ZnS:Ni films showed two characteristic bands, one broad band centered at 430 and another narrow band at 523 nm. Furthermore, concentration quenching effect on the photoluminescence intensity has been observed. - Highlights: • Nanocrystalline ZnS:Ni thin films were prepared by the chemical bath deposition method. • The size of ZnS:Ni nanocrystals was less than 10 nm showing quantum size effect. • SEM images demonstrated a dense and uniform surface that was free of pinholes. • The deposited films were highly transparent (>70%) in the visible region. • The PL spectra of ZnS:Ni thin films showed two emission peaks at 430 and 523 nm.

Formation of ZnO Nanocrystalline via Facile Non-Hydrolytic Route

International Nuclear Information System (INIS)

Ooi, M. D. Johan; Aziz, A. Abdul; Abdullah, M. J.

2011-01-01

Zinc oxide (ZnO) nanocrystalline were synthesized via oxidizing Zn powder in non-aqueous solvent with addition of Diethanolamine (DEA) as a stabilizing agent. The influence of DEA on the structural, optical properties and the formation of ZnO nanocrystalline were studied. The synthesized ZnO were polycrystalline in structures where sample without the addition of DEA shows high intensity peak of (002) phase compared with sample in the presence of DEA which preferred to grow in (101) direction. SEM micrograph displays the morphology of ZnO nanocrystalline for both of the samples which shows micron size and non-uniform particles for sample without DEA whereas for sample with DEA exhibit smaller size (∼110 nm) and nearly spherical in shape despite of some agglomeration occurs at the interparticle separation. The photoluminescence (PL) spectra shows UV emission peak for both of the samples where sample with the absence of DEA possess lower intensity of UV emission peak compared to samples with DEA which demonstrate stronger intensity despite of having very weak visible secondary emission peak at 530 nm.

Grain size dependent electrical studies on nanocrystalline SnO2

International Nuclear Information System (INIS)

Bose, A. Chandra; Thangadurai, P.; Ramasamy, S.

2006-01-01

Nanocrystalline tin oxide (n-SnO 2 ) with different grain sizes were synthesized by chemical precipitation method. Size variation was achieved by changing the hydrolysis processing time. Structural phases of the nanocrystalline SnO 2 were identified by X-ray diffraction (XRD). The grain sizes of the prepared n-SnO 2 were found to be in the range 5-20 nm which were estimated using the Scherrer formula and they were confirmed by transmission electron microscopy (TEM) measurements. The electrical properties of nanocrystalline SnO 2 were studied using impedance spectroscopy. The impedance spectroscopy results showed that, in the temperature range between 25 and 650 deg. C, the conductivity has contributions from two different mechanisms, which are attributed to different conduction mechanisms in the grain and the grain boundary regions. This is because of the different relaxation times available for the conduction species in those regions. However, for the temperatures above 300 deg. C, there is no much difference between these two different relaxation times. The Arrhenius plots gave the activation energies for the conduction process in all the samples

Grain size refinement in nanocrystalline Hitperm-type glass-coated microwires

International Nuclear Information System (INIS)

Talaat, A.; Val, J.J. del; Zhukova, V.; Ipatov, M.; Klein, P.; Varga, R.; González, J.; Churyukanova, M.; Zhukov, A.

2016-01-01

We present a new-Fe 38.5 Co 38.5 B 18 Mo 4 Cu 1 Hitperm glass-coated microwires obtained by Taylor-Ulitovsky technique with nanocrystalline structure consisting of about 23 nm of BCC α-FeCo and an amorphous precursors in as-prepared samples. Annealing resulted in a considerable decrease of such nano-grains down to (11 nm). Obtained results are discussed in terms of the stress diffusion of limited crystalline growth and the chemical composition. Rectangular hysteresis loops have been observed on all annealed samples that are necessary conditions to obtain fast domain wall propagation. An enhancement of the domain wall velocity as well as mobility after annealing has been obtained due to the structural relaxation of such grains with positive magnetostriction. These structure benefits found in the nanocrystalline Hitperm glass-coated microwires are promising for developing optimal magnetic properties. - Highlights: • Grains size refinement upon annealing. • Enhancement of the domain wall velocity as well as mobility after annealing. • Nanocrystalline structure in as-prepared microwires.

Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

Energy Technology Data Exchange (ETDEWEB)

Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the nanocrystalline Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

Science.gov (United States)

Gruen, Dieter M [Downers Grove, IL

2009-08-11

One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

Directory of Open Access Journals (Sweden)

Liskova J

2015-01-01

Full Text Available Jana Liskova,1 Oleg Babchenko,2 Marian Varga,2 Alexander Kromka,2 Daniel Hadraba,1 Zdenek Svindrych,1 Zuzana Burdikova,1 Lucie Bacakova1 1Institute of Physiology, Academy of Sciences of the Czech Republic, Prague, Czech Republic; 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic Abstract: Nanocrystalline diamond (NCD films are promising materials for bone implant coatings because of their biocompatibility, chemical resistance, and mechanical hardness. Moreover, NCD wettability can be tailored by grafting specific atoms. The NCD films used in this study were grown on silicon substrates by microwave plasma-enhanced chemical vapor deposition and grafted by hydrogen atoms (H-termination or oxygen atoms (O-termination. Human osteoblast-like Saos-2 cells were used for biological studies on H-terminated and O-terminated NCD films. The adhesion, growth, and subsequent differentiation of the osteoblasts on NCD films were examined, and the extracellular matrix production and composition were quantified. The osteoblasts that had been cultivated on the O-terminated NCD films exhibited a higher growth rate than those grown on the H-terminated NCD films. The mature collagen fibers were detected in Saos-2 cells on both the H-terminated and O-terminated NCD films; however, the quantity of total collagen in the extracellular matrix was higher on the O-terminated NCD films, as were the amounts of calcium deposition and alkaline phosphatase activity. Nevertheless, the expression of genes for osteogenic markers – type I collagen, alkaline phosphatase, and osteocalcin – was either comparable on the H-terminated and O-terminated films or even lower on the O-terminated films. In conclusion, the higher wettability of the O-terminated NCD films is promising for adhesion and growth of osteoblasts. In addition, the O-terminated surface also seems to support the deposition of extracellular matrix proteins and extracellular matrix

Synthesis and luminescence properties of nanocrystalline LiF:Mg,Cu,P phosphor

Energy Technology Data Exchange (ETDEWEB)

Sahare, P.D., E-mail: pdsahare@physics.du.ac.i [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Bakare, J.S. [SSGM College of Engineering, Amravati University, Shegaon 444 203, Maharashtra (India); Dhole, S.D. [Department of Physics, University of Pune, Ganeshkhind, Pune 411 007 (India); Ingale, N.B. [Department of Physics, Professor Ram Meghe Institute of Technology and Research, Badnera-Amravati 444 605, Maharashtra (India); Rupasov, A.A. [P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr-t 53, Moscow (Russian Federation)

2010-02-15

Nanocrystalline LiF:Mg,Cu,P phosphor material of different shapes and sizes (microcrystalline cubic shape, nanorod shape and nanocrystalline cubical shaped) have been prepared by the chemical co-precipitation method. Thermoluminescence (TL) and other dosimetric characteristics of the phosphor are studied and presented here. The formation of the materials was confirmed by the X-ray diffraction (XRD). Its shapes and sizes were also observed using scanning electron microscope (SEM). The TL glow curve of the microcrystalline powder shows a prominent single peak at 408 K along with another peak of lesser intensity at around 638 K. On the contrary, the nanocrystalline rod shaped particles show a peak of low intensity at 401 K and a prominent peak around 700 K while the nanocrystalline particles in cubical shapes again show two peaks, one at around 407 K and the other at around 617 K, of which the lower temperature (407 K) peak is more prominent. The glow curve structure changes at very high doses (100 kRad) and some new peaks appear at around 525 and 637 K also the first peak appearing at around 401 K becomes prominent. The observed changes in TL due to the change in the shape and sizes of the nanophosphor have been reported. The PL has also been studied and various excitation and emission peaks observed due to the presence of various impurities are explained. The observed results have been explained in the light of asymmetrical crystal field effects due to asymmetrical shapes of the nanocrystalline phosphor. The comparison of these properties with the microcrystalline material prepared by the same co-precipitation method is also done.

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Formation of nanocrystalline TiC from titanium and different carbon sources by mechanical alloying

Energy Technology Data Exchange (ETDEWEB)

Jia Haoling [Key Lab of Liquid Structure and Heredity of Materials, Jingshi Road 73, Jinan 250061, Shandong (China); Zhang Zhonghua [Key Lab of Liquid Structure and Heredity of Materials, Jingshi Road 73, Jinan 250061, Shandong (China)], E-mail: zh_zhang@sdu.edu.cn; Qi Zhen [Key Lab of Liquid Structure and Heredity of Materials, Jingshi Road 73, Jinan 250061, Shandong (China); Liu Guodong [School of Materials Science and Engineering, Shandong University, Jingshi Road 73, Jinan 250061 (China); Bian Xiufang [Key Lab of Liquid Structure and Heredity of Materials, Jingshi Road 73, Jinan 250061, Shandong (China)

2009-03-20

In this paper, the formation of nanocrystalline TiC from titanium powders and different carbon resources by mechanical alloying (MA) has been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The experimental results show that nanocrystalline TiC can be synthesized from Ti powders and different carbon resources (activated carbon, carbon fibres or carbon nanotubes) by MA at room temperature. Titanium and different carbon resources have a significant effect on the Ti-C reaction and the formation of TiC during MA. Moreover, the formation of nanocrystalline TiC is governed by a gradual diffusion reaction mechanism during MA, regardless of different carbon resources.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Data quality monitoring of the CMS Silicon Strip Tracker detector

International Nuclear Information System (INIS)

Benucci, L.

2010-01-01

The Physics and Data Quality Monitoring (DQM) framework aims at providing a homogeneous monitoring environment across various applications related to data taking at the CMS experiment. In this contribution, the DQM system for the Silicon Strip Tracker will be introduced. The set of elements to assess the status of detector will be mentioned, along with the way to identify problems and trace them to specific tracker elements. Monitoring tools, user interfaces and automated software will be briefly described. The system was used during extensive cosmic data taking of CMS in Autumn 2008, where it demonstrated to have a flexible and robust implementation and has been essential to improve the understanding of the detector. CMS Collaboration believes that this tool is now mature to face the forthcoming data-taking era.

In-situ TEM observation of the response of ultrafine- and nanocrystalline-grained tungsten to extreme irradiation environments.

Science.gov (United States)

El-Atwani, O; Hinks, J A; Greaves, G; Gonderman, S; Qiu, T; Efe, M; Allain, J P

2014-05-06

The accumulation of defects, and in particular He bubbles, can have significant implications for the performance of materials exposed to the plasma in magnetic-confinement nuclear fusion reactors. Some of the most promising candidates for deployment into such environments are nanocrystalline materials as the engineering of grain boundary density offers the possibility of tailoring their radiation resistance properties. In order to investigate the microstructural evolution of ultrafine- and nanocrystalline-grained tungsten under conditions similar to those in a reactor, a transmission electron microscopy study with in situ 2 keV He(+) ion irradiation at 950 °C has been completed. A dynamic and complex evolution in the microstructure was observed including the formation of defect clusters, dislocations and bubbles. Nanocrystalline grains with dimensions less than around 60 nm demonstrated lower bubble density and greater bubble size than larger nanocrystalline (60-100 nm) and ultrafine (100-500 nm) grains. In grains over 100 nm, uniform distributions of bubbles and defects were formed. At higher fluences, large faceted bubbles were observed on the grain boundaries, especially on those of nanocrystalline grains, indicating the important role grain boundaries can play in trapping He and thus in giving rise to the enhanced radiation tolerance of nanocrystalline materials.

Luminescence of nanocrystalline ZnSe:Mn2+

NARCIS (Netherlands)

Suyver, J.F.; Wuister, S.F.; Kelly, J.J.; Meijerink, A.

2000-01-01

The luminescence properties of nanocrystalline ZnSe:Mn^(2+) prepared via an inorganic chemical synthesis are described. Photoluminescence spectra show distinct ZnSe and Mn^(2+) related emissions, both of which are excited via the ZnSe host lattice. The Mn^(2+) emission wavelength and the

Nanocrystalline diamond coatings for machining

Energy Technology Data Exchange (ETDEWEB)

Frank, M.; Breidt, D.; Cremer, R. [CemeCon AG, Wuerselen (Germany)

2007-07-01

This history of CVD diamond synthesis goes back to the fifties of the last century. However, the scientific and economical potential was only gradually recognized. In the eighties, intensive worldwide research on CVD diamond synthesis and applications was launched. Industrial products, especially diamond-coated cutting tools, were introduced to the market in the middle of the nineties. This article shows the latest developments in this area, which comprises nanocrystalline diamond coating structures. (orig.)

Influence of calcium and silicon supplementation into Pleurotus ostreatus substrates on quality of fresh and canned mushrooms.

Science.gov (United States)

Thongsook, T; Kongbangkerd, T

2011-08-01

Supplements of gypsum (calcium source), pumice (silicon source) and pumice sulfate (silicon and calcium source) into substrates for oyster mushrooms (Pleurotus ostreatus) were searched for their effects on production as well as qualities of fresh and canned mushrooms. The addition of pumice up to 30% had no effect on total yield, size distribution and cap diameters. The supplementation of gypsum at 10% decreased the total yield; and although gypsum at 5% did not affect total yield, the treatment increased the proportion of large-sized caps. High content (>10%) of pumice sulfate resulted in the lower yield. Calcium and silicon contents in the fruit bodies were not influenced by supplementations. The centrifugal drip loss values and solid content of fresh mushrooms, and the percentage of weight gained and firmness of canned mushrooms, cultivated in substrates supplemented with gypsum, pumice and pumice sulfate were significantly (p≤0.05) higher than those of the control. Scanning electron micrographs revealed the more compacted hyphae of mushroom stalks supplemented with silicon and/or calcium after heat treatment, compared to the control. Supplementation of P. ostreatus substrates with 20% pumice was the most practical treatment because it showed no effect on yield and the most cost-effective.

Preparation, characterization and luminescence of nanocrystalline Y2O3:Ho

International Nuclear Information System (INIS)

Biljan, Tomislav; Gajovic, Andreja; Meic, Zlatko; Mestrovic, Ernest

2007-01-01

Nanocrystalline Y 2 O 3 :Ho was synthesized by solution combustion method with ethylene glycol as fuel. Material was characterized using powder X-ray diffraction and transmission electron microscopy (TEM). X-ray diffraction and TEM showed that the material is nanostructured. Luminescence properties were studied using Raman spectrometers with excitation in near infrared (NIR) and visible regions. The visible and NIR luminescence spectra of nanocrystalline Y 2 O 3 :Ho show some important differences from those of bulk material. The convenience of using Raman instruments for studying luminescence of lanthanide ions is demonstrated

Chemical vapor deposition of nanocrystalline diamond films

International Nuclear Information System (INIS)

Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

2008-01-01

The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

Synthesis and characterization of nanocrystalline zinc ferrite

DEFF Research Database (Denmark)

Jiang, J.S.; Yang, X.L.; Gao, L.

1999-01-01

Nanocrystalline zinc ferrite powders with a partially inverted spinel structure were synthesized by high-energy ball milling in a closed container at ambient temperature from a mixture of alpha-Fe2O3 and ZnO crystalline powders in equimolar ratio. From low-temperature and in-field Mossbauer...

Atomistic simulation study of deformation twinning of nanocrystalline body-centered cubic Mo

Energy Technology Data Exchange (ETDEWEB)

Tian, Xiaofeng [The College of Nuclear Technology and Automation Engineering, Chengdu University of Technology, Chengdu (China); Li, Dan, E-mail: txf8378@163.com [The College of Nuclear Technology and Automation Engineering, Chengdu University of Technology, Chengdu (China); Yu, You [College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu (China); You, Zhen Jiang [Australian School of Petroleum, University of Adelaide, SA 5005 (Australia); Li, Tongye [The National Key Laboratory of Nuclear Fuel and Materials, Nuclear Power Institute of China, Chengdu (China); Ge, Liangquan [The College of Nuclear Technology and Automation Engineering, Chengdu University of Technology, Chengdu (China)

2017-04-06

Deformation twinning of nanocrystalline body-centered cubic Mo was studied using molecular dynamics simulations, and the effects of grain sizes and temperatures on the deformation were evaluated. With small grain size, grain rotation accompanying grain growth was found to play important role in nanocrystalline Mo during tensile deformation. Additionally, grain rotation and the deformation controlled by GB-mediated processes induce to the difficulty of creating crack. Twin was formed by successive emission of twinning partials from grain boundaries in small grain size systems. However, the twin mechanisms of GB splitting and overlapping of two extended dislocations were also found in larger size grain. Twin induced crack tips were observed in our simulation, and this confirmed the results of previous molecular dynamics simulations. At higher temperatures, GB activities can be thermally activated, resulting in suppression of twinning tendency and improvement of ductility of nanocrystalline Mo.

Grain boundaries of nanocrystalline materials - their widths, compositions, and internal structures

International Nuclear Information System (INIS)

Fultz, B.; Frase, H.N.

2000-01-01

Nanocrystalline materials contain many atoms at and near grain boundaries. Sufficient numbers of Moessbauer probe atoms can be situated in grain boundary environments to make a clear contribution to the measured Moessbauer spectrum. Three types of measurements on nanocrystalline materials are reported here, all using Moessbauer spectrometry in conjunction with X-ray diffractometry, transmission electron microscopy, or small angle neutron scattering. By measuring the fraction of atoms contributing to the grain boundary component in a Moessbauer spectrum, and by knowing the grain size of the material, it is possible to deduce the average width of grain boundaries in metallic alloys. It is found that these widths are approximately 0.5 nm for fcc alloys and slightly larger than 1.0 nm for bcc alloys.Chemical segregation to grain boundaries can be measured by Moessbauer spectrometry, especially in conjunction with small angle neutron scattering. Such measurements on Fe-Cu and Fe 3 Si-Nb were used to study how nanocrystalline materials could be stabilized against grain growth by the segregation of Cu and Nb to grain boundaries. The segregation of Cu to grain boundaries did not stabilize the Fe-Cu alloys against grain growth, since the grain boundaries were found to widen and accept more Cu atoms during annealing. The Nb additions to Fe 3 Si did suppress grain growth, perhaps because of the low mobility of Nb atoms, but also perhaps because Nb atoms altered the chemical ordering in the alloy.The internal structure of grain boundaries in nanocrystalline materials prepared by high-energy ball milling is found to be unstable against internal relaxations at low temperatures. The Moessbauer spectra of the nanocrystalline samples showed changes in the hyperfine fields attributable to movements of grain boundary atoms. In conjunction with SANS measurements, the changes in grain boundary structure induced by cryogenic exposure and annealing at low temperature were found to be

Characteristics of RuO2-SnO2 nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

International Nuclear Information System (INIS)

Kim, Han-Ki; Choi, Sun-Hee; Yoon, Young Soo; Chang, Sung-Yong; Ok, Young-Woo; Seong, Tae-Yeon

2005-01-01

The characteristics of RuO 2 -SnO 2 nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O 2 /Ar ambient have RuO 2 -SnO 2 nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film in 0.5 M H 2 SO 4 liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm 2 μm. This suggests that the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Amorphous and nanocrystalline materials preparation, properties, and applications

CERN Document Server

Inoue, A

2001-01-01

Amorphous and nanocrystalline materials are a class of their own. Their properties are quite different to those of the corresponding crystalline materials. This book gives systematic insight into their physical properties, structure, behaviour, and design for special advanced applications.

Nanocrystalline Ni-Co Alloy Synthesis by High Speed Electrodeposition

Directory of Open Access Journals (Sweden)

Jamaliah Idris

2013-01-01

Full Text Available Electrodeposition of nanocrystals is economically and technologically viable production path for the synthesis of pure metals and alloys both in coatings and bulk form. The study presents nanocrystalline Ni-Co alloy synthesis by high speed electrodeposition. Nanocrystalline Ni-Co alloys coatings were prepared by direct current (DC and deposited directly on steel and aluminum substrates without any pretreatment, using high speed electrodeposition method. The influence of the electrolysis parameters, such as cathodic current density and temperature at constant pH, on electrodeposition and microstructure of Ni-Co alloys were examined. A homogeneous surface morphology was obtained at all current densities of the plated samples, and it was evident that the current density and temperature affect the coating thickness of Ni-Co alloy coatings.

Electrophoretic Nanocrystalline Graphene Film Electrode for Lithium Ion Battery

International Nuclear Information System (INIS)

Kaprans, Kaspars; Bajars, Gunars; Kucinskis, Gints; Dorondo, Anna; Mateuss, Janis; Gabrusenoks, Jevgenijs; Kleperis, Janis; Lusis, Andrejs

2015-01-01

Graphene sheets were fabricated by electrophoretic deposition method from water suspension of graphene oxide followed by thermal reduction. The formation of nanocrystalline graphene sheets has been confirmed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrochemical performance of graphene sheets as anode material for lithium ion batteries was evaluated by cycling voltammetry, galvanostatic charge-discharge cycling, and electrochemical impedance spectroscopy. Fabricated graphene sheets exhibited high discharge capacity of about 1120 mAh·g −1 and demonstrated good reversibility of lithium intercalation and deintercalation in graphene sheet film with capacity retention over 85 % after 50 cycles. Results show that nanocrystalline graphene sheets prepared by EPD demonstrated a high potential for application as anode material in lithium ion batteries

Synthesis and Characterization of Chemically Etched Nanostructured Silicon

KAUST Repository

Mughal, Asad Jahangir

2012-05-01

Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

Low cost silicon-on-ceramic photovoltaic solar cells

Science.gov (United States)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

High-pressure structural behavior of nanocrystalline Ge

DEFF Research Database (Denmark)

Wang, H.; Liu, J. F.; Yan, H.

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

Nanocrystalline sp{sup 2} and sp{sup 3} carbons: CVD synthesis and applications

Energy Technology Data Exchange (ETDEWEB)

Terranova, M. L. [Università degli Studi di Roma “Tor Vergata,” via Della Ricerca Scientifica, Dipartimento di Scienze e Tecnologie Chimiche—MinimaLab (Italy); Rossi, M. [Università degli Studi di Roma “Sapienza,” via A. Scarpa, Dipartimento di Scienze di Base e Applicate per l’Ingegneria and Centro di Ricerca per le Nanotecnologie Applicate all’Ingegneria (CNIS) (Italy); Tamburri, E., E-mail: emanuela.tamburri@uniroma2.it [Università degli Studi di Roma “Tor Vergata,” via Della Ricerca Scientifica, Dipartimento di Scienze e Tecnologie Chimiche—MinimaLab (Italy)

2016-11-15

The design and production of innovative materials based on nanocrystalline sp{sup 2}- and sp{sup 3}-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

Electrodeposited nanocrystalline bronze alloys as replacement for Ni

NARCIS (Netherlands)

Hovestad, A.; Tacken, R.A.; Mannetje, H.H.'t

2008-01-01

Nanocrystalline white-bronze, CuSn, electroplating was investigated as alternative to Ni plating as undercoat for noble metals in jewellery applications. A strongly acidic plating bath was developed with an organic additive to suppress hydrogen evolution and obtain bright coatings. Polarization

Electrophoretic deposition of nanocrystalline TiO2 films on Ti substrates for use in flexible dye-sensitized solar cells

International Nuclear Information System (INIS)

Tan Weiwei; Yin Xiong; Zhou Xiaowen; Zhang Jingbo; Xiao Xurui; Lin Yuan

2009-01-01

Nanocrystalline TiO 2 films were prepared on flexible Ti-metal sheets by electrophoretic deposition followed by chemical treatment with tetra-n-butyl titanate (TBT) and sintering at 450 deg. C. X-ray diffraction (XRD) analysis indicates that TBT treatment led to the formation of additional anatase TiO 2 , which plays an important role in improving the interconnection between TiO 2 particles, as well as the adherence of the film to the substrate, and in modifying the surface properties of the nanocrystalline particles. The effect of TBT treatment on the electron transport in the nanocrystalline films was studied by intensity-modulated photocurrent spectroscopy (IMPS). An increase in the conversion efficiency was obtained for the dye-sensitized solar cells with TBT-treated nanocrystalline TiO 2 films. The cell performance was further optimized by designing nanocrystalline TiO 2 films with a double-layer structure composed of a light-scattering layer and a transparent layer. The light-scattering effect of the double-layer nanocrystalline films was evaluated by diffuse reflectance spectra. Employing the double-layer nanocrystalline films as the photoelectrodes resulted in a significant improvement in the incident photo-to-current conversion efficiency of the corresponding cells due to enhanced solar absorption by light scattering. A high conversion efficiency of 6.33% was measured under illumination with 100 mW cm -2 (AM 1.5) simulated sunlight.

Fabrication of micromirrors with pyramidal shape using anisotropic etching of silicon

OpenAIRE

Moktadir, Z.; Vijaya Prakash, G.; Trupke, M.; Koukharenko, E.; Kraft, M.; Baumberg, J.J.; Eriksson, S.; Hinds, E.A.

2005-01-01

Gold micro-mirrors have been formed in silicon in an inverted pyramidal shape. The pyramidal structures are created in the (100) surface of a silicon wafer by anisotropic etching in potassium hydroxide. High quality micro-mirrors are then formed by sputtering gold onto the smooth silicon (111) faces of the pyramids. These mirrors show great promise as high quality optical devices suitable for integration into MOEMS systems.

Effect of Mo Ion Implantation on Stability of Nanocrystalline Copper Surface Layers

Directory of Open Access Journals (Sweden)

XI Yang

2016-08-01

Full Text Available The surface of pure copper was modified using the surface mechanical attrition treatment (SMAT method, and molybdenum ions were implanted in the nanosurface using a metal vapor vacuum arc (MEVVA. The results of the SMAT were observed by optical microscopy (OM, X-ray diffraction (XRD and scanning electron microscopy (SEM. An obvious nanocrystalline layer and a deformation region exist on the surface. The size of the nanocrystalline layer was characterized using atomic force microscopy (AFM. The results indicate remarkable suppression on grain size, the nanocrystalline layer grows to 163nm after annealing and reduces to only 72nm due to the Mo ion implantation. In addition, the hardness of the topmost surface of the material is 3.5 times that of the SMATed copper, which is about 7 times of the value of the matrix. The above improvements most likely result from the dispersion of the Mo ions and the reactions of the crystal defects due to the SMAT and ion implantation.

Stability of nanocrystalline Ni-based alloys: coupling Monte Carlo and molecular dynamics simulations

Science.gov (United States)

Waseda, O.; Goldenstein, H.; Silva, G. F. B. Lenz e.; Neiva, A.; Chantrenne, P.; Morthomas, J.; Perez, M.; Becquart, C. S.; Veiga, R. G. A.

2017-10-01

The thermal stability of nanocrystalline Ni due to small additions of Mo or W (up to 1 at%) was investigated in computer simulations by means of a combined Monte Carlo (MC)/molecular dynamics (MD) two-steps approach. In the first step, energy-biased on-lattice MC revealed segregation of the alloying elements to grain boundaries. However, the condition for the thermodynamic stability of these nanocrystalline Ni alloys (zero grain boundary energy) was not fulfilled. Subsequently, MD simulations were carried out for up to 0.5 μs at 1000 K. At this temperature, grain growth was hindered for minimum global concentrations of 0.5 at% W and 0.7 at% Mo, thus preserving most of the nanocrystalline structure. This is in clear contrast to a pure Ni model system, for which the transformation into a monocrystal was observed in MD simulations within 0.2 μs at the same temperature. These results suggest that grain boundary segregation of low-soluble alloying elements in low-alloyed systems can produce high-temperature metastable nanocrystalline materials. MD simulations carried out at 1200 K for 1 at% Mo/W showed significant grain boundary migration accompanied by some degree of solute diffusion, thus providing additional evidence that solute drag mostly contributed to the nanostructure stability observed at lower temperature.

Uncertainty propagation in a multiscale model of nanocrystalline plasticity

International Nuclear Information System (INIS)

Koslowski, M.; Strachan, Alejandro

2011-01-01

We characterize how uncertainties propagate across spatial and temporal scales in a physics-based model of nanocrystalline plasticity of fcc metals. Our model combines molecular dynamics (MD) simulations to characterize atomic-level processes that govern dislocation-based-plastic deformation with a phase field approach to dislocation dynamics (PFDD) that describes how an ensemble of dislocations evolve and interact to determine the mechanical response of the material. We apply this approach to a nanocrystalline Ni specimen of interest in micro-electromechanical (MEMS) switches. Our approach enables us to quantify how internal stresses that result from the fabrication process affect the properties of dislocations (using MD) and how these properties, in turn, affect the yield stress of the metallic membrane (using the PFMM model). Our predictions show that, for a nanocrystalline sample with small grain size (4 nm), a variation in residual stress of 20 MPa (typical in today's microfabrication techniques) would result in a variation on the critical resolved shear yield stress of approximately 15 MPa, a very small fraction of the nominal value of approximately 9 GPa. - Highlights: → Quantify how fabrication uncertainties affect yield stress in a microswitch component. → Propagate uncertainties in a multiscale model of single crystal plasticity. → Molecular dynamics quantifies how fabrication variations affect dislocations. → Dislocation dynamics relate variations in dislocation properties to yield stress.

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Induced anisotropy effect in nanocrystalline cores for GFCBs

Energy Technology Data Exchange (ETDEWEB)

Waeckerle, T. E-mail: thierry.waeckerle@imphy.usinor.com; Verin, Ph.; Cremer, P.; Gautard, D

2000-06-02

Nanocrystalline materials are very efficient for GFCB cores with flat hysteresis loop, especially if permeability may be raised in keeping low the remanent induction. This can be achieved with peculiar field annealing . A thermodynamic model is proposed to explain the experimental evidence.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Nanocrystalline alloys of Fe-Cu-Nb-Si-B after neutron irradiation

International Nuclear Information System (INIS)

Sitek, J.; Toth, I.; Degmova, J.; Uvacik, P.

1997-01-01

Transmission Moessbauer spectroscopy was used to study changes induced by irradiation of amorphous and nanocrystalline samples. In an as-cast sample, neutrons mostly affect the orientation of the net magnetic moment. The average hyperfine field decreases with increasing neutron fluencies. In the case of the nanocrystalline samples a new disordered structure is created in the amorphous remainder corresponding to boride phases as it is shown in the samples isothermally heated from 1 to 8 hours. The structural changes of the amorphous remainder depend on the stage of crystallization and total neutron fluencies. (author). 1 tab., 3 figs., 7 refs

A study of the structure and crystallisation of nanocrystalline zirconia

International Nuclear Information System (INIS)

Tucker, M.

1999-12-01

Nanocrystalline zirconia, prepared via, calcination of the hydroxide, has been studied using a variety of experimental techniques. Two chemical routes, a precipitation and a sol-gel route, were used to prepare the hydroxide. Neutron and X-ray diffraction, EXAFS, NMR and SANS have been used to study the structure and crystallisation, during in-situ and ambient condition measurements. The structural information from the diffraction data has been complimented by the other techniques to provide information on the short, medium and longer range structure of nanocrystalline zirconia. Pure and yttrium doped samples were studied, this enabled the affects of doping and preparation routes to be investigated. The amorphous hydroxide was found to have a, monoclinic-like structure for all samples, independent of preparation route or yttrium content. The crystallisation temperature was lowest for the pure precipitation sample and was increased by the addition of yttrium or by preparation via, the sol-gel route. For the precipitation samples, in addition to the crystallisation temperature being raised, doping with yttrium also had an effect on the size of the crystallites obtained at high temperatures. Due to the different incorporation method of the yttrium into the sol-gel samples the effect on crystallite size and crystallisation temperature, as seen for the precipitation samples, were not evident for the sol-gel samples. The neutron and NMR data clearly show hydrogen remains in the samples well after crystallisation has become evident. The structural picture of nanocrystalline zirconia consisting of small crystallites surrounded by material containing, or terminated by, hydroxyl groups, is supported by all the results and methods used in this thesis. The in-situ and ambient conditions data is combined into a coherent growth picture of the nanocrystalline material from the hydroxide until at high enough temperatures the bulk or polycrystalline material is formed. (author)

Structure characterization of nanocrystalline Ni–W alloys obtained by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Indyka, P., E-mail: paulina.indyka@uj.edu.pl [Jagiellonian University, Faculty of Chemistry, 3 Ingardena St., 30-059 Krakow (Poland); Beltowska-Lehman, E.; Tarkowski, L.; Bigos, A. [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Krakow (Poland); García-Lecina, E. [Surface Finishing Department, CIDETEC-IK4 – Centre for Electrochemical Technologies, P° Miramón 196, 20009 Donostia-San Sebastián (Spain)

2014-03-25

Highlights: • Ni–W alloy coatings were electrodeposited from an aqueous electrolyte solutions. • The microstructure was studied with respect to electrodeposition process parameters. • We report optimal plating conditions for crack-free, nanocrystalline Ni–W coatings. • Crystalline Ni–W coatings exhibited the phase structure of an α-Ni(W) solid solution. • Coatings revealed tensile residual stresses and weakly pronounced 〈1 1 0〉 fiber texture. -- Abstract: Ni–W coatings of different tungsten content (2–50 wt%) were electrodeposited on a steel substrates from an aqueous complex sulfate–citrate galvanic baths, under controlled hydrodynamic conditions in a Rotating Disk Electrode (RDE) system. The optimum conditions for the electrodeposition of crack-free, homogeneous nanocrystalline Ni–W coatings were determined on the basis of the microstructure investigation results. The XRD structural characterizations of Ni–W alloy coatings obtained under different experimental conditions were complemented by SEM and TEM analysis. Results of the study revealed that the main factor influencing the microstructure formation of the Ni–W coatings is the chemical composition of an electrolyte solution. X-ray and electron diffraction patterns of all nanocrystalline Ni–W coatings revealed mainly the fcc phase structure of an α-Ni(W) solid solution with a lattice parameter increased along with tungsten content. The use of additives in the plating bath resulted in the formation of equiaxial/quasifibrous, nanocrystalline Ni–W grains of an average size of about 10 nm. The coatings were characterized by relatively high tensile residual stresses (500–1000 MPa), depending on the electrodeposition conditions. Ni–W coatings exhibited weakly pronounced fiber type 〈1 1 0〉 crystallographic texture, consistent with the symmetry of the plating process. Coatings of the highest tungsten content 50 wt% were found to be amorphous.

Synthesis, characterization and photoluminescence properties of Dy{sup 3+}-doped nano-crystalline SnO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Pillai, Sreejarani K.; Sikhwivhilu, Lucky M. [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Hillie, Thembela K., E-mail: thillie@csir.co.za [National Centre for Nano-Structured Materials, CSIR, PO Box 395, Pretoria 0001 (South Africa); Physics Department, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

2010-04-15

Nano-crystalline of tin oxide doped with varying wt% of Dy{sup 3+} was prepared using chemical co-precipitation method and characterised by various advanced techniques such as BET-surface area, Fourier transform infrared spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence measurements. Analytical results demonstrated that the nanocrystalline tin oxide is in tetragonal crystalline phase and doping with Dy{sup 3+} could inhibit the phase transformation, increases surface area and decreases the crystallite size. The experimental result on photoluminescence characteristics originating from Dy{sup 3+}-doping in nanocrystalline SnO{sub 2} reveals the dependence of the luminescent intensity on dopant concentration.

Size dependence of the optical spectrum in nanocrystalline silver

International Nuclear Information System (INIS)

Taneja, Praveen; Ayyub, Pushan; Chandra, Ramesh

2002-01-01

We report a detailed study of the optical reflectance in sputter-deposited, nanocrystalline silver thin films in order to understand the marked changes in color that occur with decreasing particle size. In particular, samples with an average particle size in the 20 to 35 nm range are golden yellow, while those with a size smaller than 15 nm are black. We simulate the size dependence of the observed reflection spectra by incorporating Mie's theory of scattering and absorption of light in small particles, into the bulk dielectric constant formalism given by Ehrenreich and Philipp [Phys. Rev. 128, 1622 (1962)]. This provides a general method for understanding the reflected color of a dense collection of nanoparticles, such as in a nanocrystalline thin film. A deviation from Mie's theory is observed due to strong interparticle interactions

Characterisation of nanocrystalline CdS thin films deposited by CBD

International Nuclear Information System (INIS)

Devi, R.; Sarma, B.K.

2006-01-01

Nanocrystalline thin films of CdS are deposited on glass substrates by chemical bath deposition using polyvinyl alcohol (PVA) matrix solution. Crystallite sizes of the films are determined from X-ray diffraction and are found to vary from 5.4 nm to 7 nm. The band gaps of the nanocrystalline material is determined from the U-V spectrograph and are found to be within the range from 2.6 eV to 2.8 eV as grain size decreases. The band gaps are also determined from the dependence of electrical conductivity of the films with temperature. An increase of molarity decreases the grain size which in turn increases the band gap. (author)

Multiphase Nanocrystalline Ceramic Concept for Nuclear Fuel

Energy Technology Data Exchange (ETDEWEB)

Mecartnery, Martha [Univ. of California, Irvine, CA (United States); Graeve, Olivia [Univ. of California, San Diego, CA (United States); Patel, Maulik [Univ. of Liverpool (United Kingdom)

2017-05-25

The goal of this research is to help develop new fuels for higher efficiency, longer lifetimes (higher burn-up) and increased accident tolerance in future nuclear reactors. Multiphase nanocrystalline ceramics will be used in the design of simulated advanced inert matrix nuclear fuel to provide for enhanced plasticity, better radiation tolerance, and improved thermal conductivity

Multiphase Nanocrystalline Ceramic Concept for Nuclear Fuel

International Nuclear Information System (INIS)

Mecartnery, Martha; Graeve, Olivia; Patel, Maulik

2017-01-01

The goal of this research is to help develop new fuels for higher efficiency, longer lifetimes (higher burn-up) and increased accident tolerance in future nuclear reactors. Multiphase nanocrystalline ceramics will be used in the design of simulated advanced inert matrix nuclear fuel to provide for enhanced plasticity, better radiation tolerance, and improved thermal conductivity

Comparison of high pressure homogenization and stirred bead milling for the production of nano-crystalline suspensions.

Science.gov (United States)

Nakach, Mostafa; Authelin, Jean-René; Perrin, Marc-Antoine; Lakkireddy, Harivardhan Reddy

2018-05-19

Currently, the two technologies primarily used for the manufacturing of nano-crystalline suspensions using top down process (i.e. wet milling) are high pressure homogenization (HPH) and stirred bead milling (SBM). These two technologies are based upon different mechanisms, i.e., cavitation forces for HPH and shear forces for stirred bead milling. In this article, the HPH and SBM technologies are compared in terms of the impact of the suspension composition the process parameters and the technological configuration on milling performances and physical quality of the suspensions produced. The data suggested that both HPH and SBM are suitable for producing nano-crystalline suspensions, although SBM appeared more efficient than HPH, since the limit of milling (d 50 ) for SBM was found to be lower than that obtained with HPH (100 nm vs 200 nm). For both these technologies, regardless of the process parameters used for milling and the scale of manufacturing, the relationship of d 90 versus d 50 could be described by a unique master curve (technology signature of milling pathway) outlining that the HPH leads to more uniform particle size distribution as compared to SBM. Copyright © 2018 Elsevier B.V. All rights reserved.

Manifestation of external size reduction effects on the yield point of nanocrystalline rhodium using nanopillars approach

International Nuclear Information System (INIS)

Alshehri, Omar; Yavuz, Mustafa; Tsui Ting

2013-01-01

In this study, pure rhodium was fabricated and mechanically investigated at the nanoscale for the first time. The nanopillars approach was employed to study the effects of size on the yield point. Nanopillars with different diameters were fabricated using electroplating followed by uniaxial compression tests. Scanning electron microscopy (SEM) was used as a quality control technique by imaging the pillars before and after compression to ensure the absence of cracks, buckling, barrelling or any other problems. Transmission electron microscopy and SEM were used as microstructural characterization techniques. Due to substrate-induced effects, only the plastic region of the stress–strain curves were investigated, and it was revealed that the yield point increases with size reduction up to certain limit, then decreases with further reduction of the nanopillar size (diameter). The later weakening effect is consistent with the literature, which demonstrates the reversed size effect (the failure of the plasticity theory) in nanocrystalline metals, i.e. smaller is weaker. In this study, however, the effect of size reduction is not only weakening, but is strengthening-then-weakening, which the authors believe is the true behavior of nanocrystalline materials.

Optimization of nanocrystalline γ-alumina coating for direct spray ...

Indian Academy of Sciences (India)

Modifications of the partial gas percentage influences the optical properties and composition ... O2 flow in the Ar ambient and substrate temperature on struc- ture and properties of ..... nism to explain mechanical behaviour of nanocrystalline.

Fe-based nanocrystalline powder cores with ultra-low core loss

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiangyue, E-mail: wangxiangyue1986@163.com [China Iron and Steel Research Institute Group, Beijing 100081 (China); Center of Advanced Technology and Materials Co., Ltd., Beijing 100081 (China); Lu, Zhichao; Lu, Caowei; Li, Deren [China Iron and Steel Research Institute Group, Beijing 100081 (China); Center of Advanced Technology and Materials Co., Ltd., Beijing 100081 (China)

2013-12-15

Melt-spun amorphous Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 15.5}B{sub 7} alloy strip was crushed to make flake-shaped fine powders. The passivated powders by phosphoric acid were mixed with organic and inorganic binder, followed by cold compaction to form toroid-shaped bonded powder-metallurgical magnets. The powder cores were heat-treated to crystallize the amorphous structure and to control the nano-grain structure. Well-coated phosphate-oxide insulation layer on the powder surface decreased the the core loss with the insulation of each powder. FeCuNbSiB nanocrystalline alloy powder core prepared from the powder having phosphate-oxide layer exhibits a stable permeability up to high frequency range over 2 MHz. Especially, the core loss could be reduced remarkably. At the other hand, the softened inorganic binder in the annealing process could effectively improve the intensity of powder cores. - Highlights: • Fe-based nanocrystalline powder cores were prepared with low core loss. • Well-coated phosphate-oxide insulation layer on the powder surface decreased the core loss. • Fe-based nanocrystalline powder cores exhibited a stable permeability up to high frequency range over 2 MHz. • The softened inorganic binder in the annealing process could effectively improve the intensity of powder cores.

A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

Energy Technology Data Exchange (ETDEWEB)

Kang, K.H.; Jeon, H.B. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Park, H., E-mail: sunshine@knu.ac.kr [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Uozumi, S. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); and others

2016-09-21

A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

International Nuclear Information System (INIS)

Kang, K.H.; Jeon, H.B.; Park, H.; Uozumi, S.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A.K.; Batignani, G.; Bauer, A.; Behera, P.K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.

2016-01-01

A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

The effect of yttrium addition on oxidation of a sputtered nanocrystalline coating with moderate amount of tantalum in composition

International Nuclear Information System (INIS)

Wang, Jinlong; Chen, Minghui; Yang, Lanlan; Liu, Li; Zhu, Shenglong; Wang, Fuhui; Meng, Guozhe

2016-01-01

Graphical abstract: - Highlights: • Effect of Y addition on oxidation of nanocrystalline coating is studied. • Y addition delays transformation of q-Al_2O_3 to a-Al_2O_3 during oxidation. • Y addition prevents scale rumpling. • Y segregates at grain boundaries of the nanocrystalline coating. • Y retards the transportation of Ta thus reduces its oxidation. - Abstract: The effect of yttrium addition on isothermal oxidation at 1050 °C of a sputtered nanocrystalline coating with moderate amount of tantalum in composition was investigated. Results indicate that yttrium addition delays transformation of metastable θ-Al_2O_3 to equilibrium α-Al_2O_3 grown on the nanocrystalline coatings. It prevents scale rumpling and promotes the formation of oxide pegs at interface between the oxide scale and the underlying coating. Besides, yttrium prefers to segregate at grain boundaries of the nanocrystalline coating and retards the outward transportation of tantalum from coating to oxide scale, thus reducing the excessive oxidation of tantalum.

Effect of nanocrystalline surface of substrate on microstructure and ...

Indian Academy of Sciences (India)

surface layers or bulk nanocrystalline metals and alloys more effectively. ... severe plastic deformation on surface layers of bulk met- als at high strains and strain rates. .... scanning electron microscopy (SEM) (Zeiss, model: Sigma. VP), energy ...

Solubility of Carbon in Nanocrystalline -Iron

OpenAIRE

Alexander Kirchner; Bernd Kieback

2012-01-01

A thermodynamic model for nanocrystalline interstitial alloys is presented. The equilibrium solid solubility of carbon in -iron is calculated for given grain size. Inside the strained nanograins local variation of the carbon content is predicted. Due to the nonlinear relation between strain and solubility, the averaged solubility in the grain interior increases with decreasing grain size. The majority of the global solubility enhancement is due to grain boundary enrichment however. Therefor...

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Bioactive nanocrystalline wollastonite synthesized by sol–gel ...

Indian Academy of Sciences (India)

The sol–gel combustion method was employed to synthesize the nanocrystalline wollastonite by taking the raw eggshell powder as a calcium source and TEOS as a source of silicate. Glycine was used as a reductant or fuel and nitrate ions present in metal nitrate acts as an oxidizer. The phase purity of the wollastonite was ...

Nanocrystalline zinc oxide for the decontamination of sarin

Energy Technology Data Exchange (ETDEWEB)

Mahato, T.H. [Defense R and D Establishment, Jhansi Road, 474002, Gwalior, MP (India); Prasad, G.K., E-mail: gkprasad@lycos.com [Defense R and D Establishment, Jhansi Road, 474002, Gwalior, MP (India); Singh, Beer; Acharya, J.; Srivastava, A.R.; Vijayaraghavan, R. [Defense R and D Establishment, Jhansi Road, 474002, Gwalior, MP (India)

2009-06-15

Nanocrystalline zinc oxide materials were prepared by sol-gel method and were characterized by X-ray diffraction, scanning electron microscopy, thermogravimetry, nitrogen adsorption and infrared spectroscopy techniques. The data confirmed the formation of zinc oxide materials of zincite phase with an average crystallite size of {approx}55 nm. Obtained material was tested as destructive adsorbent for the decontamination of sarin and the reaction was followed by GC-NPD and GC-MS techniques. The reaction products were characterized by GC-MS and the data explored the role of hydrolysis reaction in the detoxification of sarin. Sarin was hydrolyzed to form surface bound non-toxic phosphonate on the surface of nano-zinc oxide. The data also revealed the values of rate constant and half-life to be 4.12 h{sup -1} and 0.16 h in the initial stages of the reaction and 0.361 h{sup -1} and 1.9 h at the final stages of the reaction for the decontamination reaction on nanocrystalline ZnO.

Nanocrystalline zinc oxide for the decontamination of sarin

International Nuclear Information System (INIS)

Mahato, T.H.; Prasad, G.K.; Singh, Beer; Acharya, J.; Srivastava, A.R.; Vijayaraghavan, R.

2009-01-01

Nanocrystalline zinc oxide materials were prepared by sol-gel method and were characterized by X-ray diffraction, scanning electron microscopy, thermogravimetry, nitrogen adsorption and infrared spectroscopy techniques. The data confirmed the formation of zinc oxide materials of zincite phase with an average crystallite size of ∼55 nm. Obtained material was tested as destructive adsorbent for the decontamination of sarin and the reaction was followed by GC-NPD and GC-MS techniques. The reaction products were characterized by GC-MS and the data explored the role of hydrolysis reaction in the detoxification of sarin. Sarin was hydrolyzed to form surface bound non-toxic phosphonate on the surface of nano-zinc oxide. The data also revealed the values of rate constant and half-life to be 4.12 h -1 and 0.16 h in the initial stages of the reaction and 0.361 h -1 and 1.9 h at the final stages of the reaction for the decontamination reaction on nanocrystalline ZnO.

Investigation of nanocrystalline Gd films loaded with hydrogen

KAUST Repository

Hruška, Petr; Čí žek, Jakub; Dobroň, Patrik; Anwand, Wolfgang; Mü cklich, Arndt; Gemma, Ryota; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid

2015-01-01

The present work reports on microstructure studies of hydrogen-loaded nanocrystalline Gd films prepared by cold cathode beam sputtering on sapphire (112¯0) substrates. The Gd films were electrochemically step-by-step charged with hydrogen and the structural development with increasing concentration of absorbed hydrogen was studied by transmission electron microscopy and in-situ   X-ray diffraction using synchrotron radiation. The relaxation of hydrogen-induced stresses was examined by acoustic emission measurements. In the low concentration range absorbed hydrogen occupies preferentially vacancy-like defects at GBs typical for nanocrystalline films. With increasing hydrogen concentration hydrogen starts to occupy interstitial sites. At the solid solution limit the grains gradually transform into the ββ-phase (GdH2). Finally at high hydrogen concentrations xH>2.0xH>2.0 H/Gd, the film structure becomes almost completely amorphous. Contrary to bulk Gd specimens, the formation of the γγ-phase (GdH3) was not observed in this work.

Magnetic induction heating of FeCr nanocrystalline alloys

International Nuclear Information System (INIS)

Gómez-Polo, C.; Larumbe, S.; Pérez-Landazábal, J.I.; Pastor, J.M.; Olivera, J.; Soto-Armañanzas, J.

2012-01-01

In this work the thermal effects of magnetic induction heating in (FeCr) 73.5 Si 13.5 Cu 1 B 9 Nb 3 amorphous and nanocrystalline wires were analyzed. A single piece of wire was immersed in a glass capillary filled with water and subjected to an ac magnetic field (frequency, 320 kHz). The initial temperature rise enabled the determination of the effective Specific Absorption Rate (SAR). Maximum SAR values are achieved for those samples displaying high magnetic susceptibility, where the eddy current losses dominate the induction heating behavior. Moreover, the amorphous sample with Curie temperature around room temperature displays characteristic features of self-regulated hyperthermia. - Highlights: ► Amorphous and nanocrystalline Fe based alloys with tailored Curie temperature of the amorphous phase. ► Induction heating effects under the action of a ac magnetic field. ► Self-regulated characteristics based on the control of the Curie temperature. ► Dominant role of the eddy-current losses in the self-heating phenomena.

Reactive Melt Infiltration Of Silicon Into Porous Carbon

Science.gov (United States)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

Influence of Weak External Magnetic Field on Amorphous and Nanocrystalline Fe-based Alloys

Science.gov (United States)

Degmová, J.; Sitek, J.

2010-07-01

Nanoperm, Hitperm and Finamet amorphous and nanocrystalline alloys were measured by Mössbauer spectrometry in a weak external magnetic field of 0.5 T. It was shown that the most sensitive parameters of Mössbauer spectra are the intensities of the 2nd and the 5th lines. Rather small changes were observed also in the case of internal magnetic field values. The spectrum of nanocrystalline Nanoperm showed the increase in A23 parameter (ratio of line intensities) from 2.4 to 3.7 and decrease of internal magnetic field from 20 to 19 T for amorphous subspectrum under the influence of magnetic field. Spectrum of nanocrystalline Finemet shown decrease in A23 parameter from 3.5 to 2.6 almost without a change in the internal magnetic field value. In the case of amorphous Nanoperm and Finemet samples, the changes are almost negligible. Hitperm alloy showed the highest sensitivity to the weak magnetic field, when the A23 parameter increased from 0.4 to 2.5 in the external magnetic fields. The A23 parameter of crystalline subspectrum increased from 2.7 to 3.8 and the value of internal magnetic field corresponding to amorphous subspectrum increased from 22 to 24 T. The behavior of nanocrystalline alloys under weak external magnetic field was analyzed within the three-level relaxation model of magnetic dynamics in an assembly of single-domain particles.

Artificial neural systems using memristive synapses and nano-crystalline silicon thin-film transistors

Science.gov (United States)

Cantley, Kurtis D.

Future computer systems will not rely solely on digital processing of inputs from well-defined data sets. They will also be required to perform various computational tasks using large sets of ill-defined information from the complex environment around them. The most efficient processor of this type of information known today is the human brain. Using a large number of primitive elements (˜1010 neurons in the neocortex) with high parallel connectivity (each neuron has ˜104 synapses), brains have the remarkable ability to recognize and classify patterns, predict outcomes, and learn from and adapt to incredibly diverse sets of problems. A reasonable goal in the push to increase processing power of electronic systems would thus be to implement artificial neural networks in hardware that are compatible with today's digital processors. This work focuses on the feasibility of utilizing non-crystalline silicon devices in neuromorphic electronics. Hydrogenated amorphous silicon (a-Si:H) nanowire transistors with Schottky barrier source/drain junctions, as well as a-Si:H/Ag resistive switches are fabricated and characterized. In the transistors, it is found that the on-current scales linearly with the effective width W eff of the channel nanowire array down to at least 20 nm. The solid-state electrolyte resistive switches (memristors) are shown to exhibit the proper current-voltage hysteresis. SPICE models of similar devices are subsequently developed to investigate their performance in neural circuits. The resulting SPICE simulations demonstrate spiking properties and synaptic learning rules that are incredibly similar to those in biology. Specifically, the neuron circuits can be designed to mimic the firing characteristics of real neurons, and Hebbian learning rules are investigated. Finally, some applications are presented, including associative learning analogous to the classical conditioning experiments originally performed by Pavlov, and frequency and pattern

Magnetostrictive properties of FeAl/polyester and FeAl/silicone composites

Energy Technology Data Exchange (ETDEWEB)

Riesgo, G. [Dpto. de Ciencias y Técnicas de la Navegación, Universidad de Oviedo, Campus universitario de Gijón, 33203 Gijón (Spain); Carrizo, J. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Elbaile, L., E-mail: elbaile@uniovi.es [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Crespo, R.D. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Sepúlveda, R. [Dpto. de Ingeniería Mecánica y de los Materiales, Universidad de Sevilla, Isla Cartuja, 41092 Sevilla (Spain); García, J.A. [Dpto. de Física de la Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)

2017-01-15

Highlights: • Nanocrystalline powders of FeAl have been obtained from the Fe{sub 81}Al{sub 19} ribbon produced by melt spinning. • The method allows the obtainment of a FeAl solid solution from the starting process. • The microstructure and magnetic properties of the powders were investigated. • Composites with a magnetostriction of 45 ppm have been obtained. - Abstract: Ribbons of composition Fe{sub 81}Al{sub 19} obtained by the melt spinning method have been used to yield powder by mechanical milling. Using this method, a rapid nanocrystallization and a FeAl solid solution phase was obtained from the start of the process. The microstructural and magnetic properties as well as the XRD patterns of the powders were studied in function of the milling time. Grain refinement and an increase of the coercive field were the main transformations resulting from increasing the milling time. Two sets of magnetostrictive composites were produced from the 100 h-milled powder. In one of them polyester was used as matrix and in the other one silicone. In the case of the silicone composites cured in a magnetic field of 140 mT in the longitudinal direction a saturation magnetostriction as high as 45 ppm was obtained.

Remediation of arsenic and lead with nanocrystalline zinc sulfide.

Science.gov (United States)

Piquette, Alan; Cannon, Cody; Apblett, Allen W

2012-07-27

Nanocrystalline (1.7 ± 0.3 nm) zinc sulfide with a specific surface area up to 360 m(2) g(-1) was prepared from the thermal decomposition of a single-source precursor, zinc ethylxanthate. Zinc ethylxanthate decomposes to cubic zinc sulfide upon exposure to temperatures greater than or equal to 125 °C. The resulting zinc sulfide was tested as a water impurity extractant. The target impurities used in this study were As(5+), As(3+), and Pb(2+). The reaction of the nanocrystalline ZnS with Pb(2+) proceeds as a replacement reaction where solid PbS is formed and Zn(2+) is released into the aqueous system. Removal of lead to a level of less than two parts per billion is achievable. The results of a detailed kinetics experiment between the ZnS and Pb(2+) are included in this study. Unlike the instance of lead, both As(5+) and As(3+) adsorb on the surface of the ZnS extractant as opposed to an ion-exchange process. An uptake capacity of > 25 mg g(-1) for the removal of As(5+) is possible. The uptake of As(3+) appears to proceed by a slower process than that of the As(5+) with a capacity of nearly 20 mg g(-1). The nanocrystalline zinc sulfide was extremely successful for the removal of arsenic and lead from simulated oil sand tailing pond water.

Microhardness studies of nanocrystalline lead molybdate

International Nuclear Information System (INIS)

Anandakumar, V.M.; Abdul Khadar, M.

2009-01-01

Nanocrystalline lead molybdate (PbMoO 4 ) of four different grain sizes were synthesized through chemical precipitation technique and the grain sizes and crystal structure are determined using the broadening of X-ray diffraction patterns and transmission electron microscopy. The microhardness of nanocrystalline lead molybdate (PbMoO 4 ) with different grain sizes were measured using a Vicker's microhardness tester for various applied loads ranging from 0.049 to 1.96 N. The microhardness values showed significant indentation size effect at low indentation loads. The proportional specimen resistance model put forward by Li and Bradt and energy balance model put forward by Gong and Li were used to analyze the behaviour of measured microhardness values under different indentation loads. The microhardness data obtained for samples of different grain sizes showed grain size dependent strengthening obeying normal Hall-Petch relation. The dependence of compacting pressure and annealing temperature on microhardness of the nanostructured sample with grain size of ∼18 nm were also studied. The samples showed significant increase in microhardness values as the compacting pressure and annealing time were increased. The variation of microhardness of the material with pressure of pelletization and annealing time are discussed in the light of change of pore size distribution of the samples.

Electrochemical passivation behaviour of nanocrystalline Fe80Si20 ...

Indian Academy of Sciences (India)

Abstract. Passivation behaviour of nanocrystalline coating (Fe80Si20) obtained by in situ mechanical alloying route .... is controlled by the iron oxide film in case of alloys with ..... the surface is covered, thus, producing effective protection of.

Grain boundary and triple junction diffusion in nanocrystalline copper

Energy Technology Data Exchange (ETDEWEB)

Wegner, M., E-mail: m.wegner@uni-muenster.de; Leuthold, J.; Peterlechner, M.; Divinski, S. V., E-mail: divin@uni-muenster.de [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Song, X., E-mail: xysong@bjut.edu.cn [College of Materials Science and Engineering, Beijing University of Technology, 100124 Beijing (China); Wilde, G. [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, 200444 Shanghai (China)

2014-09-07

Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, 〈d〉, of ∼35 and ∼44 nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500⋅D{sub gb} within the temperature interval from 420 K to 470 K.

Adhesion of osteoblasts on chemically patterned nanocrystalline diamonds

Czech Academy of Sciences Publication Activity Database

Kalbáčová, M.; Michalíková, Lenka; Barešová, V.; Kromka, Alexander; Rezek, Bohuslav; Kmoch, S.

2008-01-01

Roč. 245, č. 10 (2008), s. 2124-2127 ISSN 0370-1972 R&D Projects: GA AV ČR KAN400100701 Institutional research plan: CEZ:AV0Z10100521 Keywords : cell growth * nanocrystalline diamond * surface termination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.166, year: 2008

Preparation of nanocrystalline iron-carbon materials as fillers for polymers

International Nuclear Information System (INIS)

Narkiewicz, U; Pelech, I; Roslaniec, Z; Kwiatkowska, M; Arabczyk, W

2007-01-01

This paper presents a method of preparing nanocrystalline iron-carbon materials which can be applied as fillers for polymers. Nanocrystalline iron samples were carburized either under ethylene/hydrogen mixture or under pure ethylene. Three kinds of samples were prepared: cementite/carbon (Fe 3 C/C), iron/cementite (Fe/Fe 3 C) and iron/carbon (Fe/C) ones. After carburization the samples were characterized using XRD and SEM methods. The obtained samples of iron-carbon nanoparticles were applied as fillers to polymer nanocomposites prepared in a polycondensation reaction (in situ) in a poly(ether-ester) matrix. The nanofillers were dispersed in monomers (diols) using a sonificator and a high-speed rotary stirrer. The obtained nanocomposites were characterized as regards their structure (SEM method) and mechanical behaviour

Effects of Bi Addition on the Microstructure and Mechanical Properties of Nanocrystalline Ag Coatings

Directory of Open Access Journals (Sweden)

Yuxin Wang

2017-08-01

Full Text Available In this study we investigated the effects of Bi addition on the microstructure and mechanical properties of an electrodeposited nanocrystalline Ag coating. Microstructural features were investigated with transmission electron microscopy (TEM. The results indicate that the addition of Bi introduced nanometer-scale Ag-Bi solid solution particles and more internal defects to the initial Ag microstructures. The anisotropic elastic-plastic properties of the Ag nanocrystalline coating with and without Bi addition were examined with nanoindentation experiments in conjunction with the recently-developed inverse method. The results indicate that the as-deposited nanocrystalline Ag coating contained high mechanical anisotropy. With the addition of 1 atomic percent (at% Bi, the anisotropy within Ag-Bi coating was very small, and yield strength of the nanocrystalline Ag-Bi alloy in both longitudinal and transverse directions were improved by over 100% compared to that of Ag. On the other hand, the strain-hardening exponent of Ag-Bi was reduced to 0.055 from the original 0.16 of the Ag coating. Furthermore, the addition of Bi only slightly increased the electrical resistivity of the Ag-Bi coating in comparison to Ag. Results of our study indicate that Bi addition is a promising method for improving the mechanical and physical performances of Ag coating for electrical contacts.

Preparation and mechanical properties of ultra-high-strength nanocrystalline metals

Czech Academy of Sciences Publication Activity Database

Marek, I.; Vojtěch, D.; Michalcová, A.; Kubatík, Tomáš František

2015-01-01

Roč. 15, č. 4 (2015), s. 596-600 ISSN 1213-2489 Institutional support: RVO:61389021 Keywords : Mechanical properties * Nanocrystalline materials * Selective leaching * Silver * Spark plasma sintering Subject RIV: JG - Metallurgy

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Investigation on the Quality Factor Limit of the (111 Silicon Based Disk Resonator

Directory of Open Access Journals (Sweden)

Xin Zhou

2018-01-01

Full Text Available Quality factor is one of the most important parameters for a MEMS resonator. Most MEMS resonators are dominated by thermoelastic dissipation (TED. This paper demonstrates that the TED in a disk resonator that is made of (111 single-crystal silicon is surpassed by clamping loss. The stiffness-mass decoupling design method, combined with reducing the beam width, was used to engineer high QTED. Experiments show that Q of the (111 disk resonator have an upper boundary that is determined by the clamping loss caused by the unbalanced out-of-plane displacement. The origin of the out-of-plane displacement is explained by theory and simulation.

Piezoresistive silicon thin film sensor array for biomedical applications

International Nuclear Information System (INIS)

Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

2011-01-01

N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

Bioactive nanocrystalline wollastonite synthesized by sol–gel ...

Indian Academy of Sciences (India)

The sol–gel combustion method was employed to synthesize the nanocrystalline wollastonite by taking the raw eggshell powder as a calcium source and TEOS as a source of silicate. Glycine was .... 94·37% CaCO3, hence in order to prepare 1 M Ca2+ ion solu- ... requires an acid or base catalyst hence the pH of the solu-.

Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

Science.gov (United States)

Yang, Lina; Minnich, Austin J

2017-03-14

Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

Solution-processed nanocrystalline PbS on paper substrate with pencil traced electrodes as visible photodetector

Science.gov (United States)

Vankhade, Dhaval; Chaudhuri, Tapas K.

2018-04-01

Paper-based PbS photodetector sensitive in the visible spectrum is reported. Nanocrystalline PbS-on-paper devices are fabricated by a spin coating method on white paper (300 GSM) from a methanolic precursor solution. Photodetector cells of gap 0.2 cm and length 0.5 cm are prepared by drawing contacts by monolithic cretacolor 8B pencil. X-ray diffractometer confirmed the deposition of nanocrystalline PbS films with 14 nm crystallites. The SEM illustrated the uniform coating of nanocrystalline PbS thin films on cellulose fibres of papers having an average thickness of fibres are 10 µm. The linear J-V characteristics in dark and under illumination of light using graphite trace on nanocrystalline PbS-on-paper shows good ohmic contact. The resistivity of pencil trace is 30 Ω.cm. Spectral response measurements of photodetector reveal the excellent sensitivity from 400 to 700 nm with a peak at 550 nm. The best responsivity anddetectivity are 0.7 A/W and 1.4 × 1012 Jones respectively. These paper-based low-cost photodetectors devices have fast photoresponse and recovery without baseline deviation.

Method of fabricating porous silicon carbide (SiC)

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

International Nuclear Information System (INIS)

Poettgens, M.

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Poettgens, M.

2007-11-22

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

Development and implementation of quality control strategies for CMS silicon strip tracker modules

CERN Document Server

Dirkes, Guido

The LHC will explore physics at the energy frontier and will address many open questions in particle physics, like the search for the Higgs boson or Supersymmetry. For both high resolution track and vertex reconstruction is vital. The CMS silicon tracker consists of 15232 detector modules. Production and assembly of these will span two and a half years period, during which the quality control chain has to ensure functionality and reliability of the modules produced. The CMS group in Karlsruhe will produce and qualify 1600 modules. Therefore automatic test systems are developed and test strategies are worked out. Already during the RnD phase, first prototype tests were performed and some weak points of the design were uncovered. Two test stations are built. One focuses on a fast functionality test, including an active thermal cycle. The other focuses on debugging and repair requirements, including additional test options with lasers, radioactive sources, probes and infrared LEDs. For quality control measuremen...

On tension-compression asymmetry in ultrafine-grained and nanocrystalline metals

KAUST Repository

Gurses, Ercan; El Sayed, Tamer S.

2010-01-01

We present a physically motivated computational study explaining the tension/compression (T/C) asymmetry phenomenon in nanocrystalline (nc) and ultrafine-grained (ufg) face centered cubic (fcc) metals utilizing a variational constitutive model where

Grain growth studies on nanocrystalline Ni powder

International Nuclear Information System (INIS)

Rane, G.K.; Welzel, U.; Mittemeijer, E.J.

2012-01-01

The microstructure of nanocrystalline Ni powder produced by ball-milling and its thermal stability were investigated by applying different methods of X-ray diffraction line-profile analysis: single-line analysis, whole powder-pattern modelling and the (modified) Warren–Averbach method were employed. The kinetics of grain growth were investigated by both ex-situ and in-situ X-ray diffraction measurements. With increasing milling time, the grain-size reduction is accompanied by a considerable narrowing of the size distribution and an increase in the microstrain. Upon annealing, initial, rapid grain growth occurs, accompanied by the (almost complete) annihilation of microstrain. For longer annealing times, the grain-growth kinetics depend on the initial microstructure: a smaller microstrain with a broad grain-size distribution leads to linear grain growth, followed by parabolic grain growth, whereas a larger microstrain with a narrow grain-size distribution leads to incessant linear grain growth. These effects have been shown to be incompatible with grain-boundary curvature driven growth. The observed kinetics are ascribed to the role of excess free volume at the grain boundaries of nanocrystalline material and the prevalence of an “abnormal grain-growth” mechanism.

Doping of silicon by carbon during laser ablation process

Science.gov (United States)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Doping of silicon by carbon during laser ablation process

International Nuclear Information System (INIS)

Raciukaitis, G; Brikas, M; Kazlauskiene, V; Miskinis, J

2007-01-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting

Oxygen reduction on nanocrystalline ruthenia-local structure effects

DEFF Research Database (Denmark)

Abbott, Daniel F.; Mukerjee, Sanjeev; Petrykin, Valery

2015-01-01

Nanocrystalline ruthenium dioxide and doped ruthenia of the composition Ru1-xMxO2 (M = Co, Ni, Zn) with 0 ≤ x ≤ 0.2 were prepared by the spray-freezing freeze-drying technique. The oxygen reduction activity and selectivity of the prepared materials were evaluated in alkaline media using the RRDE ...

Micromechanical modelling of nanocrystalline and ultrafine grained metals: A short overview

DEFF Research Database (Denmark)

Mishnaevsky, Leon; Levashov, Evgeny

2015-01-01

An overview of micromechanical models of strength and deformation behaviour of nanostructured and ultrafine grained metallic materials is presented. Composite models of nanomaterials, polycrystal plasticity based models, grain boundary sliding, the effect of non-equilibrium grain boundaries...... and nanoscale properties are discussed and compared. The examples of incorporation of peculiar nanocrystalline effects (like large content of amorphous or semi-amorphous grain boundary phase, partial dislocation GB emission/glide/GB absorption based deformation mechanism, diffusion deformation, etc.......) into the continuum mechanical approach are given. The possibilities of using micromechanical models to explore the ways of the improving the properties of nanocrystalline materials by modifying their structures (e.g., dispersion strengthening, creating non-equilibrium grain boundaries, varying the grain size...

Evaluation of bonding between oxygen plasma treated polydimethyl siloxane and passivated silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, K C [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Liao, E [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Ong, W L [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Wong, J D S [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Agarwal, A [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Nagarajan, R [Semiconductor Process Technologies Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Yobas, L [Bioelectronics/BioMEMS Laboratory, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)

2006-04-01

Oxygen plasma treatment has been used extensively to bond polydimethyl siloxane to polydimethyl siloxane or glass in the rapid prototyping of microfluidic devices. This study aimed to improve the bonding quality of polydimethyl siloxane to passivated silicon using oxygen plasma treatment, and also to evaluate the bonding quality. Four types of passivated silicon were used: phosphosilicate glass, undoped silicate glass, silicon nitride and thermally grown silicon dioxide. Bonding strength was evaluated qualitatively and quantitatively using manual peel and mechanical shear tests respectively. Through peel tests we found that the lowering of plasma pressure from 500 to 30 mTorr and using a plasma power between 20 to 60 W helped to improve the bond quality for the first three types of passivation. Detailed analysis and discussion were conducted to explain the discrepancy between the bonding strength results and peeling results. Our results suggested that polydimethyl siloxane can be effectively bonded to passivated silicon, just as to polydimethyl siloxane or glass.

A review of recent progress in heterogeneous silicon tandem solar cells

Science.gov (United States)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

Stress-induced magnetic anisotropy in nanocrystalline alloys

International Nuclear Information System (INIS)

Varga, L.K.; Gercsi, Zs.; Kovacs, Gy.; Kakay, A.; Mazaleyrat, F.

2003-01-01

Stress-annealing experiments were extended to both nanocrystalline alloy families, Finemet and Nanoperm (Hitperm), and, for comparison, to amorphous Fe 62 Nb 8 B 30 alloy. For both Finemet and bulk amorphous, stress-annealing results in a strong induced transversal anisotropy (flattening of hysteresis loop) but yields longitudinal induced anisotropy (square hysteresis loop) in Nanoperm and Hitperm. These results are interpreted in terms of back-stress theory

The electrochemical characteristics of Mg2Ni nanocrystalline hydrogen storage alloy

International Nuclear Information System (INIS)

Zhang Ling; Zhou Xiaosong; Peng Shuming

2008-06-01

The nanocrystalline Mg 2 Ni materials were prepared by mechanical alloying. The cyclic voltametry results indicated that the potential of oxidation peak was shift as the scan rate increased and the absorption property of Mg 2 Ni prepared by mechanical alloying was increased even at ambient temperature. The absorption and desorption of hydrogen in Mg 2 Ni alloy were remarkably accelerated with the rising temperature. Small angel X-ray scattering results indicated that the Mg 2 Ni powder have 1-5 nm and 5-10 nm particle size distribution, which increased the acting sites of hydrogen absorption/desorption reaction and decreased the diffusion path of hydrogen desorption. It was induced to the enhanced performance of Mg 2 Ni nanocrystalline powder. The cycle life investigated results indicated that the activation property of Mg 2 Ni nanocrystal-line hydrogen storage alloy electrode was excellent, the capacitance maintenance ration was 66% after 200 cycles. The coating of epoxy resin on one side of the electrode had no effect on the activation property and the capacitance maintenance ration was better than the uncoating one. But the anode peak current value and the cathodic peak current value were decreased remarkably which indicated that the hydrogen absorption/desorption rate and the charge/discharge degree had decreased. (authors)

Implantation of oxygen ions for the realization of SOS (silicon on insulator) structures: SIMOX

International Nuclear Information System (INIS)

Margail, J.

1987-03-01

Highdose oxygen implantation is becoming a serious candidate for SOI (silicon on insulator) structure realization. The fabrication condition study of these substrates allowed to show up the implantation and annealing parameter importance for microstructure, and particularly for crystal quality of silicon films. It has been shown that the use of high temperature annealings leads to high quality substrates: monocrystal silicon film without any precipitate, at the card scale; Si/Si O 2 interface formation. After annealing at 1340 O C, Hall mobilities have been measured in silicon film, and its residual doping is very low. First characteristics and performance of submicron CMOS circuits prooves the electric quality of these substrates [fr

Developments in nanocrystalline magnetic alloys for industry; Alliages magnetiques nanocristallins industriels. Etat de l'art et evolution

Energy Technology Data Exchange (ETDEWEB)

Waeckerle, T.; Cremer, P. [Imphy Ugine Precision, 92 - Paris la Defense (France); Gautard, D. [Mecagis, 45 - Amilly (France)

2003-10-01

The French industrial production of nanocrystalline precursor ribbon (Imphy Ugine Precision - IUP) and nanocrystalline wound cores (Mecagis) is now mature, promoting then one of the first worldwide provider in this market. Recent progress in ribbon elaboration will provide large increase of industrial efficiency, leading the cost of a nanocrystalline solution to be closed to the cost of a ferrite solution. The precise study and control of magnetoelastic energy allowed the production scattering to be reduced, the alloy to be weakly dependant on external stresses (production, packaging, thermal dilatation), further promoting the performances. Whatever the alloy is very brittle in the nanocrystalline state, some improvements are using or are going around this intrinsic behaviour, and are now developed: powder core for low dissipative filtering, cut core for storage and strong power transformation, wound cores from ribbon nano-crystallized with high stresses during annealing, for the storage and current metering. (authors)

Nanocrystallinity and magnetic property enhancement in melt-spun iron-rare earth-base hard magnetic alloys

International Nuclear Information System (INIS)

Davies, H.A.; Manaf, A.; Zhang, P.Z.

1993-01-01

Refinement of the grain size below ∼35 nm mean diameter in melt-spun FeNdB-base alloys leads to enhancement of remanent polarization, J r , above the level predicted by the Stoner-Wohlfarth theory for an aggregate of independent, randomly oriented, and uniaxial magnetic particles. This article summarizes the results of the recent systematic research on this phenomenon, including the influence of alloy composition and processing conditions on the crystallite size, degree of enhancement of J r , and maximum energy product (BH) max . It has been shown that the effect can also occur in ternary FeNdB alloys, without the addition of silicon or aluminum, which was originally thought necessary, providing the nanocrystallites are not magnetically decoupled by a paramagnetic second phase. Values of (BH) max above 160 kJ. m -3 have been achieved. The relationship between grain size, J r , intrinsic coercivity, J H c , and (BH) max are discussed in terms of magnetic exchange coupling, anisotropy, and other parameters. Recent extension of this work to the enhancement of properties in Fe-Mischmental-Boron-base alloys and to bonded magnets with a nanocrystalline structure is also described

Rapid rate sintering of nanocrystalline ZrO2-3 mol% Y2O3

International Nuclear Information System (INIS)

Chen, D.J.; Mayo, M.J.

1996-01-01

Conventional ramp-and-hold sintering with a wide range of heating rates was conducted on submicrometer and nanocrystalline ZrO 2 -3 mol% Y 2 O 3 powder compacts. Although rapid heating rates have been reported to produce high density/fine grain size products for many submicrometer and smaller starting powders, the application of this technique to ZrO 2 -3 mol% Y 2 O 3 produced mixed results. In the case of submicrometer ZrO 2 -3 mol% Y 2 O 3 , neither densification nor grain growth was affected by the heating rate used. In the case of nanocrystalline ZrO 2 -3 mol% Y 2 O 3 , fast heating rates severely retarded densification and had a minimal effect on grain growth. The large adverse effect of fast heating rates on the densification of the nanocrystalline powder was traced to a thermal gradient/differential densification effect. Microstructural evidence suggests that the rate of densification greatly exceeded the rate of heat transfer in this material; consequently, the sample interior was not able to densify before being geometrically constrained by a fully dense shell which formed at the sample exterior. This finding implies that rapid rate sintering will meet severe practical constraints in the manufacture of bulk nanocrystalline ZrO 2 -3 mol% Y 2 O 3 specimens

Fe(Co)SiBPCCu nanocrystalline alloys with high Bs above 1.83 T

Science.gov (United States)

Liu, Tao; Kong, Fengyu; Xie, Lei; Wang, Anding; Chang, Chuntao; Wang, Xinmin; Liu, Chain-Tsuan

2017-11-01

Fe84.75-xCoxSi2B9P3C0.5Cu0.75 (x = 0, 2.5 and 10) nanocrystalline alloys with excellent magnetic properties were successfully developed. The fully amorphous alloy ribbons exhibit wide temperature interval of 145-156 °C between the two crystallization events. It is found that the excessive substitution of Co for Fe greatly deteriorates the magnetic properties due to the non-uniform microstructure with coarse grains. The alloys with x = 0 and 2.5 exhibit high saturation magnetization (above 1.83 T), low core loss and relatively low coercivity (below 5.4 A/m) after annealing. In addition, the Fe84.75Si2B9P3C0.5Cu0.75 nanocrystalline alloy also exhibits good frequency properties and temperature stability. The excellent magnetic properties were explained by the uniform microstructure with small grain size and the wide magnetic domains of the alloy. Low raw material cost, good manufacturability and excellent magnetic properties will make these nanocrystalline alloys prospective candidates for transformer and motor cores.

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO{sub 2} film

Energy Technology Data Exchange (ETDEWEB)

Hao Sancun [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China); Jiangsu Shuangdeng Group Co. Ltd, Thaizhou, Jiangsu, 225526 (China); Wu Jihuai, E-mail: jhwu@hqu.edu.cn [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Sun Zhonglin [Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China)

2012-01-01

Hydrogenated amorphous silicon film (a-Si:H) as top cell is introduced to dye-sensitized titanium dioxide nanocrystalline solar cell (DSSC) as bottom cell to assemble a hybrid tandem solar cell. The hybrid tandem solar cell fabricated with the thicknesses a-Si:H layer of 235 nm, ZnO/Pt interlayer of 100 nm and DSSC layer of 8.5 {mu}m achieves a photo-to-electric energy conversion efficiency of 8.31%, a short circuit current density of 10.61 mA{center_dot}cm{sup -2} and an open-circuit voltage of 1.45 V under a simulated solar light irradiation of 100 mW{center_dot}cm{sup -2}.

Nanocrystalline spinel ferrites by solid state reaction route

Indian Academy of Sciences (India)

Wintec

Nanocrystalline spinel ferrites by solid state reaction route. T K KUNDU* and S MISHRA. Department of Physics, Visva-Bharati, Santiniketan 731 235, India. Abstract. Nanostructured NiFe2O4, MnFe2O4 and (NiZn)Fe2O4 were synthesized by aliovalent ion doping using conventional solid-state reaction route. With the ...

Dynamic recovery in nanocrystalline Ni

International Nuclear Information System (INIS)

Sun, Z.; Van Petegem, S.; Cervellino, A.; Durst, K.; Blum, W.; Van Swygenhoven, H.

2015-01-01

The constant flow stress reached during uniaxial deformation of electrodeposited nanocrystalline Ni reflects a quasi-stationary balance between dislocation slip and grain boundary (GB) accommodation mechanisms. Stress reduction tests allow to suppress dislocation slip and bring recovery mechanisms into the foreground. When combined with in situ X-ray diffraction it can be shown that grain boundary recovery mechanisms play an important role in producing plastic strain while hardening the microstructure. This result has a significant consequence for the parameters of thermally activated glide of dislocations, such as athermal stress and activation volume, which are traditionally derived from stress/strain rate change tests

Characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki [Core Technology Laboratory, Samsung SDI, 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do 442-391 (Korea, Republic of)]. E-mail: hanki1031.kim@samsung.com; Choi, Sun-Hee [Nano Materials Research Center, Korea Institute of Science and Technology (KIST), PO Box 131 Choengryang, Seoul 130-650 (Korea, Republic of); Yoon, Young Soo [Department of Advanced Fusion Technology (DAFT), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701 (Korea, Republic of); Chang, Sung-Yong [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Ok, Young-Woo [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Seong, Tae-Yeon [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of)

2005-03-22

The characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O{sub 2}/Ar ambient have RuO{sub 2}-SnO{sub 2} nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film in 0.5 M H{sub 2}SO{sub 4} liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm{sup 2} {mu}m. This suggests that the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor.

Visualizing decoupling in nanocrystalline alloys: A FORC-temperature analysis

Science.gov (United States)

Rivas, M.; Martínez-García, J. C.; Gorria, P.

2016-02-01

Devitrifying ferromagnetic amorphous precursors in the adequate conditions may give rise to disordered assemblies of densely packed nanocrystals with extraordinary magnetic softness well explained by the exchange coupling among multiple crystallites. Whether the magnetic exchange interaction is produced by direct contact or mediated by the intergranular amorphous matrix has a strong influence on the behaviour of the system above room temperature. Multi-phase amorphous-nanocrystalline systems dramatically harden when approaching the amorphous Curie temperature (TC) due to the hard grains decoupling. The study of the thermally induced decoupling of nanosized crystallites embedded in an amorphous matrix has been performed in this work by the first-order reversal curves (FORCs) analysis. We selected a Fe-rich amorphous alloy with TC = 330 K, in order to follow the evolution of the FORC diagrams obtained below and above such temperature in samples with different percentages of nanocrystalline phase. The existence of up to four regions exhibiting unlike magnetic behaviours is unambiguously determined from the temperature evolution of the FORC.

Quantum transport in boron-doped nanocrystalline diamond

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

2008-01-01

Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

Coercivities of hot-deformed magnets processed from amorphous and nanocrystalline precursors

International Nuclear Information System (INIS)

Tang, Xin; Sepehri-Amin, H.; Ohkubo, T.; Hioki, K.; Hattori, A.; Hono, K.

2017-01-01

Hot-deformed magnets have been processed from amorphous and nanocrystalline precursors and their hard magnetic properties and microstructures have been investigated in order to explore the optimum process route. The hot-deformed magnets processed from an amorphous precursor exhibited the coercivity of 1.40 T that is higher than that processed from nanocrystalline powder, ∼1.28 T. The average grain size was larger in the magnets processed from amorphous precursor. Detailed microstructure analyses by aberration corrected scanning transmission electron microscopy revealed that the Nd + Pr concentrations in the intergranular phases were higher in the hot-deformed magnet processed from the amorphous precursor, which is considered to lead to the enhanced coercivity due to a stronger pinning force against magnetic domain wall motion.

Substitutional Boron in Nanodiamond, Bucky-Diamond, and Nanocrystalline Diamond Grain Boundaries

Energy Technology Data Exchange (ETDEWEB)

Barnard, Amanda S.; Sternberg, Michael G.

2006-10-05

Although boron has been known for many years to be a successful dopant in bulk diamond, efficient doping of nanocrystalline diamond with boron is still being developed. In general, the location, configuration, and bonding structure of boron in nanodiamond is still unknown, including the fundamental question of whether it is located within grains or grain boundaries of thin films and whether it is within the core or at the surface of nanoparticles. Presented here are density functional tight-binding simulations examining the configuration, potential energy surface, and electronic charge of substitutional boron in various types of nanocrystalline diamond. The results predict that boron is likely to be positioned at the surface of isolated particles and at the grain boundary of thin-film samples.

Optical performance of hybrid porous silicon-porous alumina multilayers

Science.gov (United States)

Cencha, L. G.; Antonio Hernández, C.; Forzani, L.; Urteaga, R.; Koropecki, R. R.

2018-05-01

In this work, we study the optical response of structures involving porous silicon and porous alumina in a multi-layered hybrid structure. We performed a rational design of the optimal sequence necessary to produce a high transmission and selective filter, with potential applications in chemical and biosensors. The combination of these porous materials can be used to exploit its distinguishing features, i.e., high transparency of alumina and high refractive index of porous silicon. We assembled hybrid microcavities with a central porous alumina layer between two porous silicon Bragg reflectors. In this way, we constructed a Fabry-Perot resonator with high reflectivity and low absorption that improves the quality of the filter compared to a microcavity built only with porous silicon or porous alumina. We explored a simpler design in which one of the Bragg reflectors is replaced by the aluminium that remains bound to the alumina after its fabrication. We theoretically explored the potential of the proposal and its limitations when considering the roughness of the layers. We found that the quality of a microcavity made entirely with porous silicon shows a limit in the visible range due to light absorption. This limitation is overcome in the hybrid scheme, with the roughness of the layers determining the ultimate quality. Q-factors of 220 are experimentally obtained for microcavities supported on aluminium, while Q-factors around 600 are reached for microcavities with double Bragg reflectors, centred at 560 nm. This represents a four-fold increase with respect to the optimal porous silicon microcavity at this wavelength.

Doping of silicon with carbon during laser ablation process

Science.gov (United States)

Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

2006-12-01

The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Round table discussion: Present and future applications of nanocrystalline magnetic materials

International Nuclear Information System (INIS)

Herzer, G.; Vazquez, M.; Knobel, M.; Zhukov, A.; Reininger, T.; Davies, H.A.; Groessinger, R.; Sanchez Ll, J.L.

2005-01-01

Examples of existing or potential applications of nanocrystalline magnetic materials, ranging from soft to hard magnetic alloys, are presented and discussed by experts in the respective fields of research and technology

Organization of silicon nanocrystals by localized electrochemical etching

International Nuclear Information System (INIS)

Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

2009-01-01

An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

Fast response time alcohol gas sensor using nanocrystalline F

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 36; Issue 4. Fast response time alcohol gas sensor using nanocrystalline F-doped SnO2 films derived via sol–gel method. Sarbani Basu Yeong-Her Wang C Ghanshyam Pawan Kapur. Volume 36 Issue 4 August 2013 pp 521-533 ...

Dye-Sensitized Solar Cells Based on High Surface Area Nanocrystalline Zinc Oxide Spheres

Directory of Open Access Journals (Sweden)

Pavuluri Srinivasu

2011-01-01

Full Text Available High surface area nanocrystalline zinc oxide material is fabricated using mesoporous nanostructured carbon as a sacrificial template through combustion process. The resulting material is characterized by XRD, N2 adsorption, HR-SEM, and HR-TEM. The nitrogen adsorption measurement indicates that the materials possess BET specific surface area ca. 30 m2/g. Electron microscopy images prove that the zinc oxide spheres possess particle size in the range of 0.12 μm–0.17 μm. The nanocrystalline zinc oxide spheres show 1.0% of energy conversion efficiency for dye-sensitized solar cells.

Emission of partial dislocations from triple junctions of grain boundaries in nanocrystalline materials

International Nuclear Information System (INIS)

Gutkin, M Yu; Ovid'ko, I A; Skiba, N V

2005-01-01

A theoretical model is suggested that describes emission of partial Shockley dislocations from triple junctions of grain boundaries (GBs) in deformed nanocrystalline materials. In the framework of the model, triple junctions accumulate dislocations due to GB sliding along adjacent GBs. The dislocation accumulation at triple junctions causes partial Shockley dislocations to be emitted from the dislocated triple junctions and thus accommodates GB sliding. Ranges of parameters (applied stress, grain size, etc) are calculated in which the emission events are energetically favourable in nanocrystalline Al, Cu and Ni. The model accounts for the corresponding experimental data reported in the literature

Mechanically alloyed PrFeB nanocrystalline magnets

International Nuclear Information System (INIS)

Kaszuwara, W.; Leonowicz, M.

1998-01-01

Mechanically alloyed PrFeB nanocrystalline magnets were prepared by extensive ball milling of Pr, Fe and Fe 80 B 20 powders, followed by diffusion annealing. After milling, the material consisted of nanocrystalline α-Fe crystallites embedded in amorphous Pr-rich matrix. Thermomagnetic and calorimetric investigations of the transformations which occurred during annealing showed that the amorphous phase crystallised at 240 C, leading to the formation of crystalline Pr having lattice constants 10% greater than those shown in the ASTM data. This fact indicated that mechanical alloying and low temperature annealing led to the formation of a solid solution of either Fe or B in Pr, which does not exist in the equilibrium state. The Pr 2 Fe 14 B phase was subsequently formed within a temperature range of 420-620 C. The magnetic properties of magnets depend on the phase structure and grain size. Milling time appears to be a decisive processing parameter for the tailoring of the magnetic properties. Depending on the phase structure, the coercivities varied from 100 to 1200 kA/m and, respectively, the remanences from 0.98 T to 0.6 T. The highest maximum energy product was 80 kJ/m 3 . (orig.)

Transformation from amorphous to nano-crystalline SiC thin films ...

Indian Academy of Sciences (India)

Administrator

phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

International Nuclear Information System (INIS)

Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

2006-01-01

Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

Anti-corrosive and anti-microbial properties of nanocrystalline Ni-Ag coatings

Energy Technology Data Exchange (ETDEWEB)

Raghupathy, Y.; Natarajan, K.A.; Srivastava, Chandan, E-mail: csrivastava@materials.iisc.ernet.in

2016-04-15

Graphical abstract: - Highlights: • Electrodeposition yielded phase-segregated, nanocrystalline Ni-Ag coatings. • Ni-Ag alloys exhibited smaller Ni crystals compared to pure Ni. • Ultra fine Ni grains of size 12–14 nm favoured Ni-Ag solid solution. • Nanocrystalline Ag resisted bio-fouling by Sulphate Reducing bacteria. • Ni-Ag outperformed pure Ni in corrosion and bio-corrosion tests. - Abstract: Anti-corrosive and anti-bacterial properties of electrodeposited nanocrystalline Ni-Ag coatings are illustrated. Pure Ni, Ni-7 at.% Ag, & Ni-14 at.% Ag coatings were electrodeposited on Cu substrate. Coating consisted of Ni-rich and Ag-rich solid solution phases. With increase in the Ag content, the corrosion resistance of the Ni-Ag coating initially increased and then decreased. The initial increase was due to the Ni-Ag solid solution. The subsequent decrease was due to the increased galvanic coupling between the Ag-rich and Ni-rich phases. For all Ag contents, the corrosion resistance of the Ni-Ag coating was higher than the pure Ni coating. Exposure to Sulphate Reducing Bacteria (SRB) revealed that the extent of bio-fouling decreased with increase in the Ag content. After 2 month exposure to SRB, the Ni-Ag coatings demonstrated less loss in corrosion resistance (58% for Ni-7 at.% Ag and 20% for Ni-14 at.% Ag) when compared pure Ni coating (115%).

Silicon production using long flaming coal and improvement of its quality indicators

Directory of Open Access Journals (Sweden)

A. D. Mekhtiev

2014-10-01

Full Text Available The object of this study is to explore possibility of metallothermic producing of crystalline silicon using various types of carbon reducing agents as a reducing agent. The experience of existing enterprises shows that one of the best carbon reducing agents qualifying silicon electric melting technology is charcoal. On the other hand, charcoal has a number of disadvantages, such as its scarcity, high cost and low mechanical strength. Experimental melts has shown the principal possibility of producing the crystalline silicon that meets the requirements of quartz standard using low ash special coke and long-flame coal as reducing agents.

Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

Energy Technology Data Exchange (ETDEWEB)

Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

2016-04-15

Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

Electrochemical passivation behaviour of nanocrystalline Fe 80 Si ...

Indian Academy of Sciences (India)

Passivation behaviour of nanocrystalline coating (Fe80Si20) obtained by in situ mechanical alloying route is studied and compared with that of the commercial pure iron and cast Fe80Si20 in sodium borate buffer solution at two different pH values (7.7 and 8.4). The coating reveals single passivation at a pH of 7.7 and ...

Thermoelectric nanocrystalline YbCoSb laser prepared layers

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Zeipl, Radek; Kocourek, Tomáš; Remsa, Jan; Navrátil, Jiří

2016-01-01

Roč. 122, č. 3 (2016), s. 1-5, č. článku 155. ISSN 0947-8396 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : nanocrystalline YbCoSb * thermoelectric layers * pulsed laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UMCH-V) Impact factor: 1.455, year: 2016

Transparent nanocrystalline ZnO films prepared by spin coating

Energy Technology Data Exchange (ETDEWEB)

Berber, M. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany)]. E-mail: mete.berber@sustech.de; Bulto, V. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Kliss, R. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Hahn, H. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Forschungszentrum Karlsruhe, Institute for Nanotechnology, Postfach 3640, 76021 Karlsruhe (Germany); Joint Research Laboratory Nanomaterials, TU Darmstadt, Institute of Materials Science, Petersenstr. 23, 64287 Darmstadt (Germany)

2005-09-15

Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents.

Transparent nanocrystalline ZnO films prepared by spin coating

International Nuclear Information System (INIS)

Berber, M.; Bulto, V.; Kliss, R.; Hahn, H.

2005-01-01

Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents

Ultra-nanocrystalline diamond electrodes: optimization towards neural stimulation applications.

Science.gov (United States)

Garrett, David J; Ganesan, Kumaravelu; Stacey, Alastair; Fox, Kate; Meffin, Hamish; Prawer, Steven

2012-02-01

Diamond is well known to possess many favourable qualities for implantation into living tissue including biocompatibility, biostability, and for some applications hardness. However, conducting diamond has not, to date, been exploited in neural stimulation electrodes due to very low electrochemical double layer capacitance values that have been previously reported. Here we present electrochemical characterization of ultra-nanocrystalline diamond electrodes grown in the presence of nitrogen (N-UNCD) that exhibit charge injection capacity values as high as 163 µC cm(-2) indicating that N-UNCD is a viable material for microelectrode fabrication. Furthermore, we show that the maximum charge injection of N-UNCD can be increased by tailoring growth conditions and by subsequent electrochemical activation. For applications requiring yet higher charge injection, we show that N-UNCD electrodes can be readily metalized with platinum or iridium, further increasing charge injection capacity. Using such materials an implantable neural stimulation device fabricated from a single piece of bio-permanent material becomes feasible. This has significant advantages in terms of the physical stability and hermeticity of a long-term bionic implant.

AlN nanoparticle-reinforced nanocrystalline Al matrix composites: Fabrication and mechanical properties

International Nuclear Information System (INIS)

Liu, Y.Q.; Cong, H.T.; Wang, W.; Sun, C.H.; Cheng, H.M.

2009-01-01

To improve the specific strength and stiffness of Al-based composites, AlN/Al nanoparticles were in-situ synthesized by arc plasma evaporation of Al in nitrogen atmosphere and consolidated by hot-pressing to fabricate AlN nanoparticle-reinforced nanocrystalline Al composites (0-39 vol.% AlN). Microstructure characterization shows that AlN nanoparticles homogeneously distribute in the matrix of Al nanocrystalline, which forms atomically bonded interfaces of AlN/Al. The hardness and the elastic modulus of the nanocomposite have been improved dramatically, up to 3.48 GPa and 142 GPa, respectively. Such improvement is believed to result from the grain refinement strengthening and the interface strengthening (load transfer) between the Al matrix and AlN nanoparticles

Analysis of a nanocrystalline polymer dispersion of ebselen using solid-state NMR, Raman microscopy, and powder X-ray diffraction.

Science.gov (United States)

Vogt, Frederick G; Williams, Glenn R

2012-07-01

Nanocrystalline drug-polymer dispersions are of significant interest in pharmaceutical delivery. The purpose of this work is to demonstrate the applicability of methods based on two-dimensional (2D) and multinuclear solid-state NMR (SSNMR) to a novel nanocrystalline pharmaceutical dispersion of ebselen with polyvinylpyrrolidone-vinyl acetate (PVP-VA), after initial characterization with other techniques. A nanocrystalline dispersion of ebselen with PVP-VA was prepared and characterized by powder X-ray diffraction (PXRD), confocal Raman microscopy and mapping, and differential scanning calorimetry (DSC), and then subjected to detailed 1D and 2D SSNMR analysis involving ¹H, ¹³C, and ⁷⁷Se isotopes and ¹H spin diffusion. PXRD was used to show that dispersion contains nanocrystalline ebselen in the 35-60 nm size range. Confocal Raman microscopy and spectral mapping were able to detect regions where short-range interactions may occur between ebselen and PVP-VA. Spin diffusion effects were analyzed using 2D SSNMR experiments and are able to directly detect interactions between ebselen and the surrounding PVP-VA. The methods used here, particularly the 2D SSNMR methods based on spin diffusion, provided detailed structural information about a nanocrystalline polymer dispersion of ebselen, and should be useful in other studies of these types of materials.

Grain size effect in corrosion behavior of electrodeposited nanocrystalline Ni coatings in alkaline solution

International Nuclear Information System (INIS)

Wang Liping; Zhang Junyan; Gao Yan; Xue Qunji; Hu Litian; Xu Tao

2006-01-01

Effects of grain size reduction on the electrochemical corrosion behavior of nanocrystalline Ni produced by pulse electrodeposition were characterized using potentiodynamic polarization testing and electrochemical impedance spectroscopy; X-ray photoelectron spectroscopy were used to confirm the electrochemical measurements and the suggested mechanisms. The corrosion resistance of Ni coatings in alkaline solutions considerably increased as the grain size decreased from microcrystalline to nanocrystalline. The higher corrosion resistance of NC Ni may be due to the more rapid formation of continuous Ni(OH) 2 passive films compared with coarse-grained Ni coatings

Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

Science.gov (United States)

Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

2014-05-14

Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

Hot corrosion of arc ion plating NiCrAlY and sputtered nanocrystalline coatings on a nickel-based single-crystal superalloy

International Nuclear Information System (INIS)

Wang, Jinlong; Chen, Minghui; Cheng, Yuxian; Yang, Lanlan; Bao, Zebin; Liu, Li; Zhu, Shenglong; Wang, Fuhui

2017-01-01

Highlights: •Hot corrosion of three metallic coatings was investigated. •NiCrAlY coating loses protectiveness against hot corrosion due to scale spallation. •The two nanocrystalline coatings perform better than NiCrAlY in hot corrosion. •Ta oxidation leads to scale pitting and corrosion of the nanocrystalline coating. •Y addition in the nanocrystalline coating reduces such harmful effect of Ta. -- Abstract: Hot corrosion in sulfate salt at 850 °C of three metallic coatings is investigated comparatively. The NiCrAlY coating loses its protectiveness after 200 h corrosion. Its oxide scale spalls off partly and becomes porous as a consequence of basic fluxing. The nanocrystalline coating (SN) performs better than the NiCrAlY one, but its scale is porous as well. Oxidation and/or sulfidation of Ta account for the formation of pores. The yttrium modified nanocrystalline coating (SNY) provides the highest corrosion resistance. Yttrium completely inhibits oxidation and sulfidation of Ta. Its scale is intact and adherent, and exclusively composted of alumina.

Investigating the Thermal and Phase Stability of Nanocrystalline Ni-W Produced by Electrodeposition, Sputtering, and Mechanical Alloying

Science.gov (United States)

Marvel, Christopher Jonathan

The development of nanocrystalline materials has been increasingly pursued over the last few decades. They have been shown to exhibit superior properties compared to their coarse-grain counterparts, and thus present a tremendous opportunity to revolutionize the performance of nanoscale devices or bulk structural materials. However, nanocrystalline materials are highly prone to grain growth, and if the nanocrystalline grains coarsen, the beneficial properties are lost. There is a strong effort to determine the most effective thermal stability mechanisms to avoid grain growth, but the physical nature of nanocrystalline grain growth is still unclear due to a lack of detailed understanding of nanocrystalline microstructures. Furthermore, the influence of contamination has scarcely been explored with advanced transmission electron microscopy techniques, nor has there been a direct comparison of alloys fabricated with different bulk processes. Therefore, this research has applied aberration-corrected scanning transmission electron microscopy to characterize nanocrystalline Ni-W on the atomic scale and elucidate the physical grain growth behavior. Three primary objectives were pursued: (1) explore the thermal stability mechanisms of nanocrystalline Ni-W, (2) evaluate the phase stability of Ni-W and link any findings to grain growth behavior, and (3) compare the influences of bulk fabrication processing, including electrodeposition, DC magnetron sputtering, and mechanical alloying, on the thermal stability and phase stability of Ni-W. Several thermal stability mechanisms were identified throughout the course of this research. First and foremost, W-segregation was scarcely observed to grain boundaries, and it is unclear if W-segregation improves thermal stability contrary to most reports in the 2 literature. Long-range Ni4W chemical ordering was observed in alloys with more than 20 at.% W, and it is likely Ni4W domains reduce grain boundary mobility. In addition, lattice

Silicon effect on the composition and structure of nanocalcium phosphates

Energy Technology Data Exchange (ETDEWEB)

Tomoaia, Gheorghe [Orthophedics and Traumatology Department, Iuliu Hatieganu University of Medicine and Pharmacy, 47 Traian Mosoiu Str., Cluj-Napoca 400132 (Romania); Mocanu, Aurora [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania); Vida-Simiti, Ioan; Jumate, Nicolae [Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Bd., Cluj-Napoca 400641 (Romania); Bobos, Liviu-Dorel [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania); Soritau, Olga [Oncology Institute of Cluj-Napoca, 34-36 Republicii Str., 400015 Cluj-Napoca (Romania); Tomoaia-Cotisel, Maria, E-mail: mtcotisel.ubbcluj@yahoo.ro [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania)

2014-04-01

Nanostructured calcium phosphates, such as nanohydroxyapatite (HAP) and HAP with silicon content (HAP-Si) of 0.47 wt.% (1% SiO{sub 2}), 2.34 wt.% (5% SiO{sub 2}) and 4.67 wt.% (10% SiO{sub 2}) in the final product, were synthesized by aqueous precipitation, freeze dried and then calcined at 650, 950 and 1150 °C. The obtained materials were investigated by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrometry, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) imaging. From the analysis of the XRD patterns, the HAP and β-tricalcium phosphate (β-TCP) phases were identified and their amounts in the samples were estimated. The size of HAP and β-TCP crystallites was estimated to be in the nanocrystalline domain. FTIR spectra showed the presence of characteristic vibrations for P–O, H–O and Si–O groups and their modification with Si content and calcination temperature. TEM, SEM and AFM images also revealed the morphology of the particles and of their aggregates. These materials have been used to manufacture scaffolds which were tested for their influence on adhesion and proliferation of cells, in human osteoblast culture, considering their further use in bone reconstruction. It was found that an appropriate addition of silicon in nanocalcium phosphate scaffolds leads to an enhanced adhesion and proliferation of cells in osteoblasts in vitro. - Highlights: • Nanostructured calcium phosphates with different silicon contents were synthesized. • Scaffolds made from hydroxyapatites with Si were used in human osteoblast cultures. • All scaffolds proved to be biocompatible to human osteoblasts in vitro. • Cell adhesion and proliferation were improved for scaffolds with 0.47 and 2.34% Si.

Strain-delocalizing effect of a metal substrate on nanocrystalline Ni film

Energy Technology Data Exchange (ETDEWEB)

Qi, Dexing [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Zhou, Jianqiu, E-mail: zhouj@njut.edu.cn [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Department of Mechanical Engineering, Wuhan Institute of Technology, Wuhan, Hubei Province 430070 (China); Liu, Hongxi; Dong, Shuhong [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Wang, Ying [Department of Mechanical and Electronic Engineering, Suzhou Institute of Industrial Technology, Suzhou, Jiangsu 215104 (China)

2015-07-29

Uniaxial tensile test and scanning electron microscopy (SEM) are introduced to study the tensile properties of electrodeposited nanocrystalline nickel/coarse-grained copper (N/C) composite in this paper. Compared to the stress strain response of pure nanocrystalline (NC) nickel (Ni), the tensile ductility of N/C composite is enhanced significantly. Based on the experimental results, a multi-phase composite model is proposed to investigate the micromechanical behaviors of the NC Ni film and N/C composite plate. The constitutive models are implemented into ABAQUS/Explicit in the form of VUMAT subroutine. A series of numerical simulations are carried out and the predications were in good agreement with experimental results. It can be concluded that the coarse-grained (CG) substrate work well in suppressing the strain localization in the NC Ni film.

Effect of Co addition on the magnetic properties and microstructure of FeNbBCu nanocrystalline alloys

Energy Technology Data Exchange (ETDEWEB)

Xue, Lin [School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Yang, Weiming [School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Liu, Haishun, E-mail: liuhaishun@126.com [School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Men, He [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Anding, E-mail: anding@nimte.ac.cn [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); Chang, Chuntao [Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo 315201 (China); Shen, Baolong, E-mail: blshen@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China)

2016-12-01

Through gradient substitution of Co for Fe, the magnetic properties and microstructures of (Fe{sub 1−x}Co{sub x}){sub 83}Nb{sub 2}B{sub 14}Cu{sub 1} (x=0.1, 0.2, 0.3, 0.4, 0.5) nanocrystalline alloys were investigated. Because of the strong ferromagnetic exchange coupling between Co and Fe, substantial improvement in saturation magnetization was achieved with proper levels of Co addition. Meanwhile, the Curie temperature increased noticeably with increasing Co addition. After heat treatment, the (Fe{sub 0.9}Co{sub 0.1}){sub 83}Nb{sub 2}B{sub 14}Cu{sub 1} nanocrystalline alloy showed a refined microstructure with an average grain size of 10–20 nm, exhibiting a comparatively high saturation magnetization of 1.82 T and a lower coercivity of 12 A/m compared to other Hitperm-type alloys with higher Co contents. Additionally, the Curie temperature reached 1150 K upon introduction of Co. As the soft magnetic properties are strengthened by adding a small amount of Co, the combination of fine, soft magnetic properties and low cost make this nanocrystalline alloy a potential magnetic material. - Highlights: • New (Fe{sub 1−x}Co{sub x}){sub 83}Nb{sub 2}B{sub 14}Cu{sub 1} nanocrystalline alloys are successfully synthesized. • Minor Co addition improves the Curie temperature of (Fe{sub 1−x}Co{sub x}){sub 83}Nb{sub 2}B{sub 14}Cu{sub 1} alloy system. • (Fe{sub 1−x}Co{sub x}){sub 83}Nb{sub 2}B{sub 14}Cu{sub 1} nanocrystalline alloys exhibit high saturation magnetization above 1.82 T.

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

Thermal Stability of Nanocrystalline Copper for Potential Use in Printed Wiring Board Applications

Science.gov (United States)

Woo, Patrick Kai Fai

Copper is a widely used conductor in the manufacture of printed wiring boards (PWB). The trends in miniaturization of electronic devices create increasing challenges to all electronic industries. In particular PWB manufacturers face great challenges because the increasing demands in greater performance and device miniaturization pose enormous difficulties in manufacturing and product reliability. Nanocrystalline and ultra-fine grain copper can potentially offer increased reliability and functionality of the PWB due to the increases in strength and achievable wiring density by reduction in grain size. The first part of this thesis is concerned with the synthesis and characterization of nanocrystalline and ultra-fine grain-sized copper for potential applications in the PWB industry. Nanocrystalline copper with different amounts of sulfur impurities (25-230ppm) and grain sizes (31-49nm) were produced and their hardness, electrical resistivity and etchability were determined. To study the thermal stability of nanocrystalline copper, differential scanning calorimetry and isothermal heat treatments combined with electron microscopy techniques for microstructural analysis were used. Differential scanning calorimetry was chosen to continuously monitor the grain growth process in the temperature range from 40?C to 400?C. During isothermal annealing experiments samples were annealed at 23?C, 100?C and 300?C to study various potential thermal issues for these materials in PWB applications such as the long-term room temperature thermal stability as well as for temperature excursions above the operation temperature and peak temperature exposure during the PWB manufacturing process. From all annealing experiments the various grain growth events and the overall stability of these materials were analyzed in terms of driving and dragging forces. Experimental evidence is presented which shows that the overall thermal stability, grain boundary character and texture evolution of

Structure and coercivity of nanocrystalline Fe–Si–B–Nb–Cu alloys

Indian Academy of Sciences (India)

Unknown

Fe–Si–B–Nb–Cu alloy; melt-spinning; crystallization; nanocrystalline ... to possess a unique combination of soft magnetic properties ... meability and high electrical resistivity (Yoshizawa et al ... ture and thermal stability of the alloy ribbons.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Magnetotransport in nanocrystalline SmB6 thin films

Directory of Open Access Journals (Sweden)

Jie Yong

2015-07-01

Full Text Available SmB6 has been predicted to be a prototype of topological Kondo insulator (TKI but its direct experimental evidence as a TKI is still lacking to date. Here we report on our search for the signature of a topological surface state and investigation of the effect of disorder on transport properties in nanocrystalline SmB6 thin films through longitudinal magnetoresistance and Hall coefficient measurements. The magnetoresistance (MR at 2 K is positive and linear (LPMR at low field and become negative and quadratic at higher field. While the negative part is understood from the reduction of the hybridization gap due to Zeeman splitting, the positive dependence is similar to what is observed in other topological insulators (TI. We conclude that the LPMR is a characteristic of TI and is related to the linear dispersion near the Dirac cone. The Hall resistance shows a sign change around 50K. It peaks and becomes nonlinear around 10 K then decreases below 10 K. This indicates that carriers with opposite signs emerge below 50 K. These properties indicate that the surface states are robust and probably topological in our nanocrystalline films.

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

Science.gov (United States)

Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

2017-10-01

We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

Hysteresis properties of conventionally annealed and Joule-heated nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloys

International Nuclear Information System (INIS)

Tiberto, P.; Basso, V.; Beatrice, C.; Bertotti, G.

1996-01-01

The dependence of magnetic properties on the thermal treatment used to induce the amorphous-to-nanocrystalline transformation in Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 alloy has been studied. Quasi-static hysteresis loops and initial permeability measurements were performed on nanocrystalline samples obtained by conventional annealing and Joule heating. A comparison between the magnetic properties of nanocrystalline samples obtained by the two heating procedures is presented. (orig.)

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

Nano-scale simulation based study of creep behavior of bimodal nanocrystalline face centered cubic metal.

Science.gov (United States)

Meraj, Md; Pal, Snehanshu

2017-10-11

In this paper, the creep behavior of nanocrystalline Ni having bimodal grain structure is investigated using molecular dynamics simulation. Analysis of structural evolution during the creep process has also been performed. It is observed that an increase in size of coarse grain causes improvement in creep properties of bimodal nanocrystalline Ni. Influence of bimodality (i.e., size difference between coarse and fine grains) on creep properties are found to be reduced with increasing creep temperature. The dislocation density is observed to decrease exponentially with progress of creep deformation. Grain boundary diffusion controlled creep mechanism is found to be dominant at the primary creep region and the initial part of the secondary creep region. After that shear diffusion transformation mechanism is found to be significantly responsible for deformation as bimodal nanocrystalline Ni transforms to amorphous structure with further progress of the creep process. The presence of , , and  distorted icosahedra has a significant influence on creep rate in the tertiary creep regime according to Voronoi cluster analysis.

The impact of silicon feedstock on the PV module cost

NARCIS (Netherlands)

del Coso, G.; del Cañizo, C.; Sinke, W.C.

2010-01-01

The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

Thermal conductivity of the amorphous and nanocrystalline phases of the beech wood biocarbon nanocomposite

Science.gov (United States)

Kartenko, N. F.; Orlova, T. S.; Parfen'eva, L. S.; Smirnov, B. I.; Smirnov, I. A.

2014-11-01

Natural composites (biocarbons) obtained by carbonization of beech wood at different carbonization temperatures T carb in the range of 800-2400°C have been studied using X-ray diffraction. The composites consist of an amorphous matrix and nanocrystallites of graphite and graphene. The volume fractions of the amorphous and nanocrystalline phases as functions of T carb have been determined. Temperature dependences of the phonon thermal conductivity κ( T) of the biocarbons with different temperatures T carb (1000 and 2400°C) have been analyzed in the range of 5-300 K. It has been shown that the behavior of κ( T) of the biocarbon with T carb = 1000°C is controlled by the amorphous phase in the range of 5-50 K and by the nanocrystalline phase in the range of 100-300 K. The character of κ( T) of the biocarbon with T carb = 2400°C is determined by the heat transfer (scattering) in the nanocrystalline phase over the entire temperature range of 5-300 K.

Method of production of hollow silicon nitride articles

International Nuclear Information System (INIS)

Parr, N.L.; Brown, R.L.

1971-01-01

The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

Czech Academy of Sciences Publication Activity Database

Ižák, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

2015-01-01

Roč. 129, May (2015), 95-99 ISSN 0927-7765 R&D Projects: GA ČR GAP108/12/0996 Grant - others:AVČR(CZ) M100101209 Institutional support: RVO:68378271 Keywords : field-effect transistors * nanocrystalline diamond * osteoblastic cells * leakage currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.902, year: 2015

Interface effects on effective elastic moduli of nanocrystalline materials

International Nuclear Information System (INIS)

Wang Gangfeng; Feng Xiqiao; Yu Shouwen; Nan Cewen

2003-01-01

Interfaces often play a significant role in many physical properties and phenomena of nanocrystalline materials (NcMs). In the present paper, the interface effects on the effective elastic property of NcMs are investigated. First, an atomic potential method is suggested for estimating the effective elastic modulus of an interface phase. Then, the Mori-Tanaka effective field method is employed to determine the overall effective elastic moduli of a nanocrystalline material, which is regarded as a binary composite consisting of a crystal or inclusion phase with regular lattice connected by an amorphous-like interface or matrix phase. Finally, the stiffening effects of strain gradients are examined on the effective elastic property by using the strain gradient theory to analyze a representative unit cell. Our analysis shows two physical mechanisms of interfaces that influence the effective stiffness and other mechanical properties of materials. One is the softening effect due to the distorted atomic structures and the increased atomic spacings in interface regions, and another is the baffling effect due to the existence of boundary layers between the interface phase and the crystalline phase

Mechanical properties of nanocrystalline palladium prepared by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Castrup, Anna; Hahn, Horst [Forschungszentrum Karlsruhe (Germany); Technical University of Darmstadt (Germany); Scherer, Torsten; Ivanisenko, Yulia; Choi, In-Suk; Kraft, Oliver [Forschungszentrum Karlsruhe (Germany)

2009-07-01

Nanocrystalline metals and alloys with grain sizes well below 100 nm often demonstrate unique deformation behaviour and therefore attract a great interest in material science. The understanding of deformation mechanisms operating in nanocrystalline materials is important to predict their mechanical properties. In the present study Pd films of 1{mu}m thickness were prepared using UHV rf magnetron sputtering on dog bone shaped Kapton substrates and on Si/SiO2 wafers. The films were sputtered using multilayer technology with an individual layer thickness of 10 nm. This resulted in grain sizes of about 20 nm. Initial microstructure and texture were characterized using conventional XRD measurements and transmission electron microscopy (TEM) in both cross section- and plane view. The mechanical properties were investigated using tensile testing and nanoindentation at several strain rates. An increased hardness and strength as compared to coarse grained Pd was observed, as well as high strain rate sensitivity. The microstructure in the gauge section after tensile testing was again analyzed using TEM in order to reveal signatures of deformation mechanisms like dislocation motion or twinning.

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

2016-08-01

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

International Nuclear Information System (INIS)

Lohmiller, Jochen; Spolenak, Ralph; Gruber, Patric A.

2014-01-01

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility

Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

Energy Technology Data Exchange (ETDEWEB)

Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

2014-02-10

Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

International Nuclear Information System (INIS)

Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

2008-01-01

Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

The synthesis of a high quality, low cost silicon nitride powder by the carbothermal reduction of silica

International Nuclear Information System (INIS)

Cochran, G.A.; Conner, C.L.; Eisman, G.A.; Weimer, A.W.; Carroll, D.F.; Dunmead, S.D.; Hwang, C.J.

1994-01-01

The development and emergence of silicon nitride in the marketplace depends on the availability of a high quality, low cost powder which meets or exceeds the requirements for the customer's part application. The Dow Chemical Company, funded by the United States Department of Energy Oak Ridge National Laboratory, is engaged in developing a process which will economically synthesize commercial quantities of such a high quality powder. The Dow Chemical Company's approach is based on the carbothermal reduction of silica and has been shown to produce a sub-micron, equi-axed powder with high alpha content (> 95%), low oxygen (< 2%), and minimal carbon and impurities. This paper will review The Dow Chemical Company program and present preliminary results of the synthesis and powder processing efforts. (orig.)

Molecular dynamics simulations of tension–compression asymmetry in nanocrystalline copper

Energy Technology Data Exchange (ETDEWEB)

Zhou, Kai, E-mail: kaizhou@aliyun.com; Liu, Bin; Shao, Shaofeng; Yao, Yijun

2017-04-04

Molecular dynamics simulations are used to investigate uniaxial tension and compression of nanocrystalline copper with mean grain sizes of 3.8–11.9 nm. The simulation results show an apparent asymmetry in the flow stress, with nanocrystalline copper stronger in compression than in tension. The asymmetry exhibits a maximum at the mean grain size of about 10 nm. The dominant mechanism of the asymmetry depends on the mean grain size. At small grain sizes, grain-boundary based plasticity dominates the asymmetry, while for large grain sizes the asymmetry mainly arises from the pressure dependent dislocation emission from grain boundaries. - Highlights: • The tension–compression asymmetry in strength exhibits a maximum at the mean grain size of about 10 nm. • The main mechanisms govern the asymmetry are grain-boundary mediated plasticity and dislocation based plasticity. • The above-mentioned mechanisms are both grain size and pressure dependent. • The transition of the asymmetry with the mean grain size is not influenced by strain rate.

Compaction simulation of nano-crystalline metals with molecular dynamics analysis

Directory of Open Access Journals (Sweden)

Khoei A.R.

2016-01-01

Full Text Available The molecular-dynamics analysis is presented for 3D compaction simulation of nano-crystalline metals under uniaxial compaction process. The nano-crystalline metals consist of nickel and aluminum nano-particles, which are mixed with specified proportions. The EAM pair-potential is employed to model the formation of nano-particles at different temperatures, number of nano-particles, and mixing ratio of Ni and Al nano-particles to form the component into the shape of a die. The die-walls are modeled using the Lennard-Jones inter-atomic potential between the atoms of nano-particles and die-walls. The forming process is model in uniaxial compression, which is simulated until the full-dense condition is attained at constant temperature. Numerical simulations are performed by presenting the densification of nano-particles at different deformations and distribution of dislocations. Finally, the evolutions of relative density with the pressure as well as the stress-strain curves are depicted during the compaction process.

Preparation and characterization of nanocrystalline composites Mo-C-N hard films

Energy Technology Data Exchange (ETDEWEB)

Liu, Q. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Liu, T. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Fang, Q.F. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)]. E-mail: qffang@issp.ac.cn; Liang, F.J. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China); Wang, J.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, POB 1129, 230031 Hefei (China)

2006-05-01

Molybdenum carbonitride (MoCN) films were deposited on Si (001) and stainless steel substrates by reactive direct-current magnetron sputtering with a molybdenum and graphite composite target. By changing the substrate temperature and the N{sub 2} / Ar ratio in the sputtering gas, it is found that good quality MoCN films can be deposited at substrate temperature of 300-400 deg. C under N{sub 2} partial pressure of 0.25-0.5 Pa with a total working pressure of 1 Pa. The structures of the films deposited at such conditions were determined by X-ray diffraction and X-ray photoelectron spectroscopy analysis as nanocrystalline molybdenum carbonitride with a grain size of several ten nanometers was embedded in the amorphous matrix of C and CN {sub x}. The hardness of the MoCN films can reach 28 GPa, much higher than the value of MoC and MoN films alone.

Combustion synthesis and photoluminescence in novel red emitting yttrium gadolinium pyrosilicate nanocrystalline phosphor

Energy Technology Data Exchange (ETDEWEB)

Hedaoo, V.P., E-mail: vraikwar@rediffmail.com [Department of Physics, R. J. College, Ghatkopar, Mumbai, MS 400086 (India); Bhatkar, V.B. [Department of Physics, Shri Shivaji Science College, Amravati, MS 444602 (India); Omanwar, S.K. [Department of Physics, SGB Amravati University, Amravati, MS 444602 (India)

2016-07-05

Yttrium Gadolinium Pyrosilicate Y{sub 2-x}Gd{sub x}Si{sub 2}O{sub 7}:Eu{sup 3+} (x = 0.05, 0.10, 0.15) phosphor powder was prepared by facile and time efficient modified combustion method for the first time. The phosphor was characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), photoluminescence excitation (PLE) and emission (PL) spectroscopy and color chromaticity coordinates. XRD revealed the monoclinic crystal structure with space group P1¯. The crystallite size was calculated by Williamson-Hall (W–H) analysis. Nanoplates-like morphology was observed in FESEM analysis with size in the range 50–80 nm. TEM images confirmed the particle size and shape. Upon excitation by 254 nm UV light, the phosphor showed the characteristic red emission peaks at 589 nm and 613 nm corresponding to {sup 5}D{sub 0} → {sup 7}F{sub 1} and {sup 5}D{sub 0} → {sup 7}F{sub 2} transitions respectively. It was observed that the nanocrystalline phosphor Y{sub 2-x}Gd{sub x}Si{sub 2}O{sub 7}:Eu{sup 3+}can be tuned to emit orange to red color by adjusting the ratio Y/Gd. This phosphor thus can be a potential candidate as orange to red color emitting tunable nanocrystalline phosphor for optical devices. - Highlights: • A novel Yttrium Gadolinium Pyrosilicate doped with Eu{sup 3+} is reported. • Facile and time efficient modified combustion method is used. • The nanocrystalline structure was shown by X-ray diffraction, W–H analysis. • FESEM and TEM images confirmed the nanocrystalline structure. • The reported phosphor can be tuned from orange to red by varying Y/Gd ratio.

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Sun, S. J.; Varga, M.; Chou, H.; Hsu, H.S.; Kromka, A.; Horák, Pavel

2015-01-01

Roč. 394, Nov (2015), s. 477-480 ISSN 0304-8853 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LD14011 EU Projects: European Commission(XE) COST Action MP1202 HINT Institutional support: RVO:68378271 ; RVO:61389005 Keywords : diamond * nonmetallic ferromagnetic materials * fine-particle systems * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

Influence of coating on nanocrystalline magnetic properties during high temperature thermal ageing

Energy Technology Data Exchange (ETDEWEB)

Lekdim, Atef, E-mail: atef.lekdim@univ-lyon1.fr; Morel, Laurent; Raulet, Marie-Ange

2017-05-15

Since their birth or mergence the late 1980s, the nanocrystalline ultrasoft magnetic materials are taking a great importance in power electronic systems conception. One of the main advantages that make them more attractive nowadays is their ability to be packaged since the reduction of the magnetostrictive constant to almost zero. In aircraft applications, due to the high component compactness and to their location (for example near the jet engine), the operating temperature increases and may reach easily 200 °C and more. Consequently, the magnetic thermal ageing may occur but is, unfortunately, weakly studied. This paper focuses on the influence of the coating (packaging type) on the magnetic nanocrystalline performances during a thermal ageing. This study is based on monitoring the magnetic characteristics of two types of nanocrystalline cores (naked and coated) during a thermal activated ageing (100, 150 and 200 °C). Based on a dedicated monitoring protocol, a large magnetic characterization has been done and analyzed. Elsewhere, X-Ray Diffraction and magnetostriction measurements were carried out to support the study of the anisotropy energies evolution with ageing. This latter is discussed in this paper to explain and give hypothesis about the ageing phenomena. - Highlights: • The coating impacts drastically the magnetic properties during thermal ageing. • Irreversible ageing phenomena after the total coating breakage. • The deteriorations are related to the storage of the magnetoelastic anisotropy.

Releasing cation diffusion in self-limited nanocrystalline defective ceria thin films

DEFF Research Database (Denmark)

Esposito, Vincenzo; Ni, D. W.; Gualandris, Fabrizio

2017-01-01

Acceptor-doped nanocrystalline cerium oxide thin films are mechanically constrained nano-domains, with film/substrate interfacial strain and chemical doping deadlock mass diffusion. In contrast, in this paper we show that chemical elements result in highly unstable thin films under chemical...

Effect of Silicon in U-10Mo Alloy

Energy Technology Data Exchange (ETDEWEB)

Kautz, Elizabeth J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Devaraj, Arun [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kovarik, Libor [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lavender, Curt A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Joshi, Vineet V. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2017-08-31

This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showed that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

International Nuclear Information System (INIS)

Wu Shan-Shan; Wang Lei; Yang De-Ren

2011-01-01

The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively. (condensed matter: structure, mechanical and thermal properties)

Mobility lifetime product in doped and undoped nanocrystalline CdSe

International Nuclear Information System (INIS)

Tripathi, S.K.; Al-Kabbi, Alaa S.; Sharma, Kriti; Saini, G.S.S.

2013-01-01

This paper reports the effect of doping on the charge transport in nanocrystalline CdSe thin film. The X-ray study confirms that the doping is achieved and the physical properties are improved. The energy resolution of a semiconductor radiation detector depends on the charge transport properties of the semiconductor and the mobility-lifetime (μτ) product is a key figure of merit for the charge transport. μτ product in nanocrystalline CdSe, CdSe:In and CdSe:Zn thin films has been estimated from temperature dependence of the photoconductivity, which increases with increase in temperature and doping. Also, μτ product of electrons in pure and doped nanocrystalline CdSe thin films has been determined by spectral photoconductivity at different applied voltages. Both the μτ and photoconductivity increase linearly with the bias voltage but the wavelength dependence remains qualitatively similar in all samples. The μτ products increase at photon energies > energy gap, which indicates that the recombination process depends on the excitation energy. The doped CdSe thin films have higher drift length in comparison with undoped films which suggest that these thin films can be used in charge collecting devices. - Highlights: • The structure of thin films has been studied using X-ray diffraction. • Spectral dependence of μτ product in pure and doped nc-CdSe thin films is studied. • The mobility-lifetime product shows dependence on temperature and doping type. • The drift length increases linearly with increasing applied field and doping. • The transport properties of nc-CdSe thin films are enhanced with doping

Nanocrystalline material in toroidal cores for current transformer: analytical study and computational simulations

Directory of Open Access Journals (Sweden)

Benedito Antonio Luciano

2005-12-01

Full Text Available Based on electrical and magnetic properties, such as saturation magnetization, initial permeability, and coercivity, in this work are presented some considerations about the possibilities of applications of nanocrystalline alloys in toroidal cores for current transformers. It is discussed how the magnetic characteristics of the core material affect the performance of the current transformer. From the magnetic characterization and the computational simulations, using the finite element method (FEM, it has been verified that, at the typical CT operation value of flux density, the nanocrystalline alloys properties reinforce the hypothesis that the use of these materials in measurement CT cores can reduce the ratio and phase errors and can also improve its accuracy class.

Structural and transport properties of nanocrystalline MnFe/sub 2/O/sub 4/ synthesized by co-precipitation method

International Nuclear Information System (INIS)

Akhtar, M.J.; Younas, M.

2012-01-01

The nanocrystalline ferrites with spinel structures have been the focus of scientific investigation and received continuous interest in recent decades. The structural and electrical properties of these materials have become an important area of research and are attracting considerable interest due to broad range of applications. Spinel ferrites have been shown to exhibit interesting dielectric properties in the nanocrystalline form in comparison to the corresponding bulk materials. Structural and electrical properties of nanocrystalline MnFe/sub 2/O/sub 4/ were investigated. X-ray diffraction and X-ray absorption fine structure spectroscopy results showed that nanocrystalline MnFe/sub 2/O/sub 4/ had cubic symmetry with 80% inversion. shows the X-ray absorption near edge structure (XANES) spectra of MnFe/sub 2/O/sub 4/ and Zn/sub 1-x/Ni/sub x/Fe/sub 2/O/sub 4/, used as model compounds. The electrical transport properties were investigated by employing impedance spectroscopy. It was observed that the dielectric constant decreased with the increase in frequency. The effects of frequency on dielectric properties were more prominent in the low frequency region, where dielectric constant increased as temperature was increased. (Orig./A.B.)

Aqueous slip casting of MgAl2O4 spinel powder

Indian Academy of Sciences (India)

The reaction proceeds by counter diffusion of the cations through the product layer, .... tain powders, such as Ube E10 silicon nitride Starck, B10 silicon carbide .... 779 kg/mm2 for a nanocrystalline dense MAS consolidated by aqueous slip ...

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

Science.gov (United States)

Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

2010-03-01

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

Quartz crystal microbalance gas sensor with nanocrystalline diamond sensitive layer

Czech Academy of Sciences Publication Activity Database

Varga, Marián; Laposa, A.; Kulha, Pavel; Kroutil, J.; Husák, M.; Kromka, Alexander

2015-01-01

Roč. 252, č. 11 (2015), s. 2591-2597 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : gas sensor * nanocrystalline diamond * quartz resonator * thickness shear mode Subject RIV: JB - Sensor s, Measurment, Regulation Impact factor: 1.522, year: 2015

On preparation of nanocrystalline chromites by co-precipitation andautocombustion methods

Czech Academy of Sciences Publication Activity Database

Matulková, Irena; Holec, Petr; Pacáková, Barbara; Kubíčková, Simona; Mantlíková, Alice; Plocek, Jiří; Němec, I.; Nižňanský, D.; Vejpravová, Jana

2015-01-01

Roč. 195, May (2015), s. 66-73 ISSN 0921-5107 R&D Projects: GA ČR GAP108/10/1250 Institutional support: RVO:68378271 ; RVO:61388980 Keywords : transition metal chromites * nanocrystalline particles * microstructural analysis * vibrational spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.331, year: 2015

Characterizing deformed ultrafine-grained and nanocrystalline materials using transmission Kikuchi diffraction in a scanning electron microscope

International Nuclear Information System (INIS)

Trimby, Patrick W.; Cao, Yang; Chen, Zibin; Han, Shuang; Hemker, Kevin J.; Lian, Jianshe; Liao, Xiaozhou; Rottmann, Paul; Samudrala, Saritha; Sun, Jingli; Wang, Jing Tao; Wheeler, John; Cairney, Julie M.

2014-01-01

Graphical abstract: -- Abstract: The recent development of transmission Kikuchi diffraction (TKD) in a scanning electron microscope enables fast, automated orientation mapping of electron transparent samples using standard electron backscatter diffraction (EBSD) hardware. TKD in a scanning electron microscope has significantly better spatial resolution than conventional EBSD, enabling routine characterization of nanocrystalline materials and allowing effective measurement of samples that have undergone severe plastic deformation. Combining TKD with energy dispersive X-ray spectroscopy (EDS) provides complementary chemical information, while a standard forescatter detector system below the EBSD detector can be used to generate dark field and oriented dark field images. Here we illustrate the application of this exciting new approach to a range of deformed, ultrafine grained and nanocrystalline samples, including duplex stainless steel, nanocrystalline copper and highly deformed titanium and nickel–cobalt. The results show that TKD combined with EDS is a highly effective and widely accessible tool for measuring key microstructural parameters at resolutions that are inaccessible using conventional EBSD

A variational multiscale constitutive model for nanocrystalline materials

KAUST Repository

Gurses, Ercan

2011-03-01

This paper presents a variational multi-scale constitutive model in the finite deformation regime capable of capturing the mechanical behavior of nanocrystalline (nc) fcc metals. The nc-material is modeled as a two-phase material consisting of a grain interior phase and a grain boundary effected zone (GBAZ). A rate-independent isotropic porous plasticity model is employed to describe the GBAZ, whereas a crystal-plasticity model which accounts for the transition from partial dislocation to full dislocation mediated plasticity is employed for the grain interior. The constitutive models of both phases are formulated in a small strain framework and extended to finite deformation by use of logarithmic and exponential mappings. Assuming the rule of mixtures, the overall behavior of a given grain is obtained via volume averaging. The scale transition from a single grain to a polycrystal is achieved by Taylor-type homogenization where a log-normal grain size distribution is assumed. It is shown that the proposed model is able to capture the inverse HallPetch effect, i.e., loss of strength with grain size refinement. Finally, the predictive capability of the model is validated against experimental results on nanocrystalline copper and nickel. © 2010 Elsevier Ltd. All rights reserved.

Nanocrystalline materials: recent advances in crystallographic characterization techniques

Directory of Open Access Journals (Sweden)

Emilie Ringe

2014-11-01

Full Text Available Most properties of nanocrystalline materials are shape-dependent, providing their exquisite tunability in optical, mechanical, electronic and catalytic properties. An example of the former is localized surface plasmon resonance (LSPR, the coherent oscillation of conduction electrons in metals that can be excited by the electric field of light; this resonance frequency is highly dependent on both the size and shape of a nanocrystal. An example of the latter is the marked difference in catalytic activity observed for different Pd nanoparticles. Such examples highlight the importance of particle shape in nanocrystalline materials and their practical applications. However, one may ask `how are nanoshapes created?', `how does the shape relate to the atomic packing and crystallography of the material?', `how can we control and characterize the external shape and crystal structure of such small nanocrystals?'. This feature article aims to give the reader an overview of important techniques, concepts and recent advances related to these questions. Nucleation, growth and how seed crystallography influences the final synthesis product are discussed, followed by shape prediction models based on seed crystallography and thermodynamic or kinetic parameters. The crystallographic implications of epitaxy and orientation in multilayered, core-shell nanoparticles are overviewed, and, finally, the development and implications of novel, spatially resolved analysis tools are discussed.

Change of magnetic properties of nanocrystalline alloys under influence of external factors

Science.gov (United States)

Sitek, Jozef; Holková, Dominika; Dekan, Julius; Novák, Patrik

2016-10-01

Nanocrystalline (Fe3Ni1)81Nb7B12 alloys were irradiated using different types of radiation and subsequently studied by Mössbauer spectroscopy. External magnetic field of 0.5 T, electron-beam irradiation up to 4 MGy, neutron irradiation up to 1017 neutrons/cm2 and irradiation with Cu ions were applied on the samples. All types of external factors had an influence on the magnetic microstructure manifested as a change in the direction of the net magnetic moment, intensity of the internal magnetic field and volumetric fraction of the constituent phases. The direction of the net magnetic moment was the most sensitive parameter. Changes of the microscopic magnetic parameters were compared after different external influence and results of nanocrystalline samples were compared with their amorphous precursors.

Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

2006-01-01

TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

High Pressure X-Ray Diffraction Studies on Nanocrystalline Materials

Science.gov (United States)

Palosz, B.; Stelmakh, S.; Grzanka, E.; Gierlotka, S.; Pielaszek, R.; Bismayer, U.; Werner, S.; Palosz, W.

2003-01-01

Application of in situ high pressure powder diffraction technique for examination of specific structural properties of nanocrystals based on the experimental data of SiC nanocrystalline powders of 2 to 30 nrn diameter in diameter is presented. Limitations and capabilities of the experimental techniques themselves and methods of diffraction data elaboration applied to nanocrystals with very small dimensions (nanoparticles of different grain size.

Stress-assisted grain growth in nanocrystalline metals: Grain boundary mediated mechanisms and stabilization through alloying

International Nuclear Information System (INIS)

Zhang, Yang; Tucker, Garritt J.; Trelewicz, Jason R.

2017-01-01

The mechanisms of stress-assisted grain growth are explored using molecular dynamics simulations of nanoindentation in nanocrystalline Ni and Ni-1 at.% P as a function of grain size and deformation temperature. Grain coalescence is primarily confined to the high stress region beneath the simulated indentation zone in nanocrystalline Ni with a grain size of 3 nm. Grain orientation and atomic displacement vector mapping demonstrates that coalescence transpires through grain rotation and grain boundary migration, which are manifested in the grain interior and grain boundary components of the average microrotation. A doubling of the grain size to 6 nm and addition of 1 at.% P eliminates stress-assisted grain growth in Ni. In the absence of grain coalescence, deformation is accommodated by grain boundary-mediated dislocation plasticity and thermally activated in pure nanocrystalline Ni. By adding solute to the grain boundaries, the temperature-dependent deformation behavior observed in both the lattice and grain boundaries inverts, indicating that the individual processes of dislocation and grain boundary plasticity will exhibit different activity based on boundary chemistry and deformation temperature.

A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

2005-01-01

A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

Science.gov (United States)

Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

2018-05-01

Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

Carrier mobilities in microcrystalline silicon films

International Nuclear Information System (INIS)

Bronger, T.; Carius, R.

2007-01-01

For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

Nanocrystalline Iron-Cobalt Alloys for High Saturation Indutance

Science.gov (United States)

2016-02-24

film deposited just like the pick-up of a turn-table music player. The contact pads provide the electrical contacts to the starting and end point of...anisotropy using the geometry of the thin toroid. We have shown experimentally that the thin film toroid calculations may be applicable to up to millimeter...thin film as well as bulk devices. 15. SUBJECT TERMS Micromagnetic Calculations, Nanocrystalline cobalt-iron, Thin Film Toroids 16. SECURITY

Shock-induced microstructural response of mono- and nanocrystalline SiC ceramics

Science.gov (United States)

Branicio, Paulo S.; Zhang, Jingyun; Rino, José P.; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya

2018-04-01

The dynamic behavior of mono- and nanocrystalline SiC ceramics under plane shock loading is revealed using molecular-dynamics simulations. The generation of shock-induced elastic compression, plastic deformation, and structural phase transformation is characterized at different crystallographic directions as well as on a 5-nm grain size nanostructure at 10 K and 300 K. Shock profiles are calculated in a wide range of particle velocities 0.1-6.0 km/s. The predicted Hugoniot agree well with experimental data. Results indicate the generation of elastic waves for particle velocities below 0.8-1.9 km/s, depending on the crystallographic direction. In the intermediate range of particle velocities between 2 and 5 km/s, the shock wave splits into an elastic precursor and a zinc blende-to-rock salt structural transformation wave, which is triggered by shock pressure over the ˜90 GPa threshold value. A plastic wave, with a strong deformation twinning component, is generated ahead of the transformation wave for shocks in the velocity range between 1.5 and 3 km/s. For particle velocities greater than 5-6 km/s, a single overdriven transformation wave is generated. Surprisingly, shocks on the nanocrystalline sample reveal the absence of wave splitting, and elastic, plastic, and transformation wave components are seamlessly connected as the shock strength is continuously increased. The calculated strengths 15.2, 31.4, and 30.9 GPa for ⟨001⟩, ⟨111⟩, and ⟨110⟩ directions and 12.3 GPa for the nanocrystalline sample at the Hugoniot elastic limit are in excellent agreement with experimental data.

Process development for high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

1991-12-31

Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

Optical properties and quantum confinement of nanocrystalline II-IV semiconductor particles

NARCIS (Netherlands)

Dijken, Albert van

1999-01-01

In this thesis, experiments are described that were performed on suspensions of nanocrystalline II-IV semiconductor particles.The object of this research is to study quantum size effects in relation to the luminescence properties of these particles. A pre-requisite for performing studies of

CP/MAS ¹³C NMR study of pulp hornification using nanocrystalline cellulose as a model system.

Science.gov (United States)

Idström, Alexander; Brelid, Harald; Nydén, Magnus; Nordstierna, Lars

2013-01-30

The hornification process of paper pulp was investigated using solid-state (13)C NMR spectroscopy. Nanocrystalline cellulose was used to serve as a model system of the crystalline parts of the fibrils in pulp fibers. Characterization of the nanocrystalline cellulose dimensions was carried out using scanning electron microscopy. The samples were treated by drying and wetting cycles prior to NMR analysis where the hornification phenomenon was recorded by spectral changes of the cellulose C-4 carbon signals. An increase of the crystalline signal and a decrease of the signals corresponding to the accessible amorphous domains were found for both paper pulp and nanocrystalline cellulose. These spectral changes grew stronger with repeating drying and wetting cycles. The results show that cellulose co-crystallization contribute to hornification. Another conclusion is that the surfaces of higher hydrophobicity in cellulose fibrils have an increased preference for aggregation. Copyright © 2012 Elsevier Ltd. All rights reserved.

Combined Ultrasonic Elliptical Vibration and Chemical Mechanical Polishing of Monocrystalline Silicon

Directory of Open Access Journals (Sweden)

Liu Defu

2016-01-01

Full Text Available An ultrasonic elliptical vibration assisted chemical mechanical polishing(UEV-CMP is employed to achieve high material removal rate and high surface quality in the finishing of hard and brittle materials such as monocrystalline silicon, which combines the functions of conventional CMP and ultrasonic machining. In theultrasonic elliptical vibration aided chemical mechanical polishingexperimental setup developed by ourselves, the workpiece attached at the end of horn can vibrate simultaneously in both horizontal and vertical directions. Polishing experiments are carried out involving monocrystalline silicon to confirm the performance of the proposed UEV-CMP. The experimental results reveal that the ultrasonic elliptical vibration can increase significantly the material removal rate and reduce dramatically the surface roughness of monocrystalline silicon. It is found that the removal rate of monocrystalline silicon polished by UEV-CMP is increased by approximately 110% relative to that of conventional CMP because a passive layer on the monocrystalline silicon surface, formed by the chemical action of the polishing slurry, will be removed not only by the mechanical action of CMP but also by ultrasonic vibration action. It indicates that the high efficiency and high quality CMP of monocrystalline silicon can be performed with the proposed UEV-CMP technique.

Biomimetic three-dimensional nanocrystalline hydroxyapatite and magnetically synthesized single-walled carbon nanotube chitosan nanocomposite for bone regeneration

Directory of Open Access Journals (Sweden)

Im O

2012-04-01

Full Text Available Owen Im1, Jian Li2, Mian Wang2, Lijie Grace Zhang2,3, Michael Keidar2,31Department of Biomedical Engineering, Duke University, Durham, NC; 2Department of Mechanical and Aerospace Engineering, 3Institute for Biomedical Engineering and Institute for Nanotechnology, The George Washington University, Washington, DC, USABackground: Many shortcomings exist in the traditional methods of treating bone defects, such as donor tissue shortages for autografts and disease transmission for allografts. The objective of this study was to design a novel three-dimensional nanostructured bone substitute based on magnetically synthesized single-walled carbon nanotubes (SWCNT, biomimetic hydrothermally treated nanocrystalline hydroxyapatite, and a biocompatible hydrogel (chitosan. Both nanocrystalline hydroxyapatite and SWCNT have a biomimetic nanostructure, excellent osteoconductivity, and high potential to improve the load-bearing capacity of hydrogels.Methods: Specifically, three-dimensional porous chitosan scaffolds with different concentrations of nanocrystalline hydroxyapatite and SWCNT were created to support the growth of human osteoblasts (bone-forming cells using a lyophilization procedure. Two types of SWCNT were synthesized in an arc discharge with a magnetic field (B-SWCNT and without a magnetic field (N-SWCNT for improving bone regeneration.Results: Nanocomposites containing magnetically synthesized B-SWCNT had superior cytocompatibility properties when compared with nonmagnetically synthesized N-SWCNT. B-SWCNT have much smaller diameters and are twice as long as their nonmagnetically prepared counterparts, indicating that the dimensions of carbon nanotubes can have a substantial effect on osteoblast attachment.Conclusion: This study demonstrated that a chitosan nanocomposite with both B-SWCNT and 20% nanocrystalline hydroxyapatite could achieve a higher osteoblast density when compared with the other experimental groups, thus making this nanocomposite

The CDF Silicon Vertex Trigger

International Nuclear Information System (INIS)

Dell'Orso, Mauro

2006-01-01

Motivations, design, performance and ongoing upgrade of the CDF Silicon Vertex Trigger are presented. The system provides CDF with a powerful tool for online tracking with offline quality in order to enhance the reach on B-physics and large P t -physics coupled to b quarks

Ag diffusion and interface segregation in nanocrystalline γ-FeNi alloy with a two-scale microstructure

International Nuclear Information System (INIS)

Divinski, S.V.; Hisker, F.; Kang, Y.-S.; Lee, J.-S.; Herzig, Chr.

2004-01-01

Solute diffusion of Ag in nanocrystalline γ-Fe - 40wt%Ni alloy was studied by means of the radiotracer technique in an extended temperature interval (489-1200 K). The powder metallurgical method was applied to produce nanomaterial which consisted of micrometer-large clusters (agglomerates) of nanometer sized grains. Two types of internal interfaces contributed as short-circuit paths for diffusion: the nanocrystalline grain boundaries (GB) and the inter-agglomerate interfaces (subscript a). Combining the recent results on Ag GB diffusion in coarse-grained γ-Fe - 40wt%Ni alloy and the present diffusion data in the nanocrystalline alloy the Ag segregation was determined as function of temperature. Ag segregates strongly at GBs in the γ-Fe - 40wt%Ni alloy with a segregation enthalpy of H s =-47 kJ/mol. Knowing the segregation factor, the experimental data on Ag diffusion along both nanocrystalline and inter-agglomerate interfaces in the nanomaterial were systematically analyzed in dependence on the different kinetic regimes. The sensitive radiotracer experiments and the subsequent diffusion profile analysis resulted in a consistent set of diffusion data in the whole investigated temperature range with Arrhenius behavior for both the Ag nano-GB diffusion (D 0 gb =4.7x10 -4 m 2 /s, H gb =173 kJ/mol) as well as for the much faster inter-agglomerate interface diffusion (D 0 a =8.1x10 -5 m 2 /s, H a =91 kJ/mol)

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Biomimetic three-dimensional nanocrystalline hydroxyapatite and magnetically synthesized single-walled carbon nanotube chitosan nanocomposite for bone regeneration

Science.gov (United States)

Im, Owen; Li, Jian; Wang, Mian; Zhang, Lijie Grace; Keidar, Michael

2012-01-01

Background Many shortcomings exist in the traditional methods of treating bone defects, such as donor tissue shortages for autografts and disease transmission for allografts. The objective of this study was to design a novel three-dimensional nanostructured bone substitute based on magnetically synthesized single-walled carbon nanotubes (SWCNT), biomimetic hydrothermally treated nanocrystalline hydroxyapatite, and a biocompatible hydrogel (chitosan). Both nanocrystalline hydroxyapatite and SWCNT have a biomimetic nanostructure, excellent osteoconductivity, and high potential to improve the load-bearing capacity of hydrogels. Methods Specifically, three-dimensional porous chitosan scaffolds with different concentrations of nanocrystalline hydroxyapatite and SWCNT were created to support the growth of human osteoblasts (bone-forming cells) using a lyophilization procedure. Two types of SWCNT were synthesized in an arc discharge with a magnetic field (B-SWCNT) and without a magnetic field (N-SWCNT) for improving bone regeneration. Results Nanocomposites containing magnetically synthesized B-SWCNT had superior cytocompatibility properties when compared with nonmagnetically synthesized N-SWCNT. B-SWCNT have much smaller diameters and are twice as long as their nonmagnetically prepared counterparts, indicating that the dimensions of carbon nanotubes can have a substantial effect on osteoblast attachment. Conclusion This study demonstrated that a chitosan nanocomposite with both B-SWCNT and 20% nanocrystalline hydroxyapatite could achieve a higher osteoblast density when compared with the other experimental groups, thus making this nanocomposite promising for further exploration for bone regeneration. PMID:22619545

Carbonate effects on hexavalent uranium removal from water by nanocrystalline titanium dioxide

International Nuclear Information System (INIS)

Wazne, Mahmoud; Meng, Xiaoguang; Korfiatis, George P.; Christodoulatos, Christos

2006-01-01

A novel nanocrystalline titanium dioxide was used to treat depleted uranium (DU)-contaminated water under neutral and alkaline conditions. The novel material had a total surface area of 329 m 2 /g, total surface site density of 11.0 sites/nm 2 , total pore volume of 0.415 cm 3 /g and crystallite size of 6.0 nm. It was used in batch tests to remove U(VI) from synthetic solutions and contaminated water. However, the capacity of the nanocrystalline titanium dioxide to remove U(VI) from water decreased in the presence of inorganic carbonate at pH > 6.0. Adsorption isotherms, Fourier transform infrared (FTIR) spectroscopy, and surface charge measurements were used to investigate the causes of the reduced capacity. The surface charge and the FTIR measurements suggested that the adsorbed U(VI) species was not complexed with carbonate at neutral pH values. The decreased capacity of titanium dioxide to remove U(VI) from water in the presence of carbonate at neutral to alkaline pH values was attributed to the aqueous complexation of U(VI) by inorganic carbonate. The nanocrystalline titanium dioxide had four times the capacity of commercially available titanium dixoide (Degussa P-25) to adsorb U(VI) from water at pH 6 and total inorganic carbonate concentration of 0.01 M. Consequently, the novel material was used to treat DU-contaminated water at a Department of Defense (DOD) site

Simulations of intergranular fracture in nanocrystalline molybdenum

DEFF Research Database (Denmark)

Frederiksen, Søren Lund; Jacobsen, Karsten Wedel; Schiøtz, Jakob

2004-01-01

Using molecular dynamics simulations we investigate the plastic deformation of nanocrystalline molybdenum with a grain size of 12 nm at high strain rates. The simulations are performed with an interatomic potential which is obtained through matching of atomic forces to a database generated...... with density-functional calculations. The simulations show the plastic deformation to involve both grain boundary processes and dislocation migration which in some cases lead to twin boundary formation. A large component of the strain is accommodated through the formation of cracks in the grain boundaries...

Structural, electrical and dielectric properties of nanocrystalline Mg-Zn ferrites

International Nuclear Information System (INIS)

Anis-ur-Rehman, M.; Malik, M.A.; Nasir, S.; Mubeen, M.; Khan, K.; Maqsood, A.

2011-01-01

The nanocrystalline Mg-Zn ferrites having general formula Mg/sub 1-x/Zn/sub x/Fe/sub 2/O/sub 4/ (x=0, 0.1, 0.2, 0.3, 0.4, 0. 5) were prepared by WOWS sol-gel route. All prepared samples were sintered at 700 deg. C for 2 h. X-ray powder diffraction (XRD) technique was used to investigate structural properties of the samples. The crystal structure was found to be spinel. The crystallite size, lattice parameters and porosity of samples were calculated by XRD data analysis as function of zinc concentration. The crystallite size for each sample was calculated using the Scherrer formula considering the most intense (3 1 1) peak and the range obtained was 34-68 nm. The dielectric constant, dielectric loss tangent and AC electrical conductivity of nanocrystalline Mg-Zn ferrites are investigated as a function of frequency. The dielectric constant, dielectric loss tangent increased with increase of Zn concentration. All the electrical properties are explained in accordance with Maxwell Wagner model and K/sub oops/ phenomenological theory. (author)

New atom probe approaches to studying segregation in nanocrystalline materials.

Science.gov (United States)

Samudrala, S K; Felfer, P J; Araullo-Peters, V J; Cao, Y; Liao, X Z; Cairney, J M

2013-09-01

Atom probe is a technique that is highly suited to the study of nanocrystalline materials. It can provide accurate atomic-scale information about the composition of grain boundaries in three dimensions. In this paper we have analysed the microstructure of a nanocrystalline super-duplex stainless steel prepared by high pressure torsion (HPT). Not all of the grain boundaries in this alloy display obvious segregation, making visualisation of the microstructure challenging. In addition, the grain boundaries present in the atom probe data acquired from this alloy have complex shapes that are curved at the scale of the dataset and the interfacial excess varies considerably over the boundaries, making the accurate characterisation of the distribution of solute challenging using existing analysis techniques. In this paper we present two new data treatment methods that allow the visualisation of boundaries with little or no segregation, the delineation of boundaries for further analysis and the quantitative analysis of Gibbsian interfacial excess at boundaries, including the capability of excess mapping. Copyright © 2013 Elsevier B.V. All rights reserved.

Effect of plating time on growth of nanocrystalline Ni–P from ...

Indian Academy of Sciences (India)

Nanocrystalline nickel phosphorus (NC-Ni–P) deposits from sulphate/glycine bath using a simple electroless deposition process is demonstrated. In the present investigation, nanoporous alumina films are formed on the aluminium surface by anodization process followed by deposition of nickel onto the pores by electroless ...

Structural analysis of nanocrystalline ZnTe alloys synthesized by melt quenching technique

Science.gov (United States)

Singh, Harinder; Singh, Tejbir; Thakur, Anup; Sharma, Jeewan

2018-05-01

Nanocrystalline ZnxTe100-x (x=0, 5, 20, 30, 40, 50) alloys have been synthesized using melt quenching technique. Energy-dispersive X-Ray spectroscopy (EDS) has been used to verify the elemental composition of samples. Various absorption modes are recorded from Fourier transform infrared spectroscopy (FTIR) confirming the formation of ZnTe. The structural study has been performed using X-Ray Diffraction (XRD) method. All synthesized samples have been found to be nanocrystalline in nature with average crystallite size in the range from 49.3 nm to 77.1 nm. Results have shown that Zn0Te100 exhibits hexagonal phase that transforms into a cubic ZnTe phase as the amount of zinc is increased. Pure ZnTe phase has been obtained for x = 50. The texture coefficient (Tc) has been calculated to find the prominent orientations of different planes.

Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

International Nuclear Information System (INIS)

Liu, F. B.; Jing, B.; Cui, Y.; Di, J. J.; Qu, M.

2015-01-01

The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond film are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed

Effects of silicon carbide MOSFETs on the efficiency and power quality of a microgrid-connected inverter

International Nuclear Information System (INIS)

Ding, Xiaofeng; Chen, Feida; Du, Min; Guo, Hong; Ren, Suping

2017-01-01

Highlights: •The characteristics comparison between SiC-inverter and Si-inverter is implemented, considering thermal effects. •The voltage distortion of inverters is modeling from the perspective of the behaviors of the device. •The efficiency of the microgrid-connected inverter has been greatly increased by replacing Si with SiC. •The SiC microgrid-connected inverter has smaller voltage distortion and less harmonic current than those of Si-inverter. •The proposed analytical model has been validated by the experimental test. -- Abstract: With the expanding power demands and increasing use of renewable energy resources, microgrids have been widely supported. Wide bandgap semiconductor devices with higher blocking voltage capabilities and higher switching speeds, such as silicon carbide (SiC) devices, will become a critical component in building microgrids. This paper describes a comprehensive investigation of the effects of SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) on the efficiency and power quality of the inverters used in low voltage microgrids compared with conventional inverters based on silicon (Si) Insulated-gate Bipolar Transistors (IGBTs). First, the characteristics of both SiC and Si are measured by a double pulse test (DPT), considering thermal effects. Then, conduction and switching losses under different temperatures are calculated based on DPT results. Second, phase voltage distortions are modeled and calculated according to the tested switching and conduction characteristics of SiC, resulting in harmonic components in the phase current. Finally, an experiment is implemented. The experimental results show that the SiC-inverter greatly increases the energy efficiency and improves the power quality in the microgrid; these results are consistent with the analytical results.

Evaluation of biological activities of nanocrystalline zirconia synthesis via combustion method

International Nuclear Information System (INIS)

Thakare, V.G.; Omanwar, S.K.; Bhatkar, V.B.; Wadegaokar, P.A.

2016-01-01

The objective of the following study was synthesis of nanocrystalline zirconia by modified solution combustion synthesis method and evaluation of its structural and biological properties. The sample was characterized by powder X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and evaluated for cytotoxicity study using 3T3 mouse fibroblast cells, the antibacterial property are investigated by spread plate method against E. coli bacterial pathogen and studied for degradation using phosphate buffered saline (PBS) solution. The XRD pattern shows that the monoclinic phase of nanocrystalline zirconia was obtained. The FESEM images showed that the prepared sample consists of particles in the range of 45 nm and homogenous particle size distribution. The sample of zirconia has excellent tissue biocompatibility and does not show any toxicity towards normal 3T3 mouse fibroblast cells. It also inhibited the bacterial growth. The sample shows stability at physiological condition and does not show degradation. (author)

Transparent nanocrystalline diamond coatings and devices

Science.gov (United States)

Sumant, Anirudha V.; Khan, Adam

2017-08-22

A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.

Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

International Nuclear Information System (INIS)

Govindaraju, N.; Singh, R.N.

2011-01-01

Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

Quality by Design approach to spray drying processing of crystalline nanosuspensions.

Science.gov (United States)

Kumar, Sumit; Gokhale, Rajeev; Burgess, Diane J

2014-04-10

Quality by Design (QbD) principles were explored to understand spray drying process for the conversion of liquid nanosuspensions into solid nano-crystalline dry powders using indomethacin as a model drug. The effects of critical process variables: inlet temperature, flow and aspiration rates on critical quality attributes (CQAs): particle size, moisture content, percent yield and crystallinity were investigated employing a full factorial design. A central cubic design was employed to generate the response surface for particle size and percent yield. Multiple linear regression analysis and ANOVA were employed to identify and estimate the effect of critical parameters, establish their relationship with CQAs, create design space and model the spray drying process. Inlet temperature was identified as the only significant factor (p value dried nano-crystalline powders. Aspiration and flow rates were identified as significant factors affecting yield (p value dried at higher inlet temperatures had lower moisture compared to those dried at lower inlet temperatures. Published by Elsevier B.V.

Similar healthy osteoclast and osteoblast activity on nanocrystalline hydroxyapatite and nanoparticles of tri-calcium phosphate compared to natural bone

Directory of Open Access Journals (Sweden)

MacMillan AK

2014-12-01

Full Text Available Adam K MacMillan,1 Francis V Lamberti,1 Julia N Moulton,2 Benjamin M Geilich,2 Thomas J Webster2,3 1RTI Surgical, Alachua, FL, USA; 2Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 3Center of Excellence for Advanced Materials Research, King Abdulaziz University, Jeddah, Saudi Arabia Abstract: While there have been numerous studies to determine osteoblast (bone forming cell functions on nanocrystalline compared to micron crystalline ceramics, there have been few studies which have examined osteoclast activity (including tartrate-resistant acid phosphatase, formation of resorption pits, size of resorption pits, and receptor activator of nuclear factor κB [RANK]. This is despite the fact that osteoclasts are an important part of maintaining healthy bone since they resorb bone during the bone remodeling process. Moreover, while it is now well documented that bone formation is enhanced on nanoceramics compared to micron ceramics, some have pondered whether osteoblast functions (such as osteoprotegerin and RANK ligand [RANKL] are normal (ie, non-diseased on such materials compared to natural bone. For these reasons, the objective of the present in vitro study was to determine various functions of osteoclasts and osteoblasts on nanocrystalline and micron crystalline hydroxyapatite as well as tri-calcium phosphate materials and compare such results to cortical and cancellous bone. Results showed for the first time similar osteoclast activity (including tartrate-resistant acid phosphatase, formation of resorption pits, size of resorption pits, and RANK and osteoblast activity (osteoprotegerin and RANKL on nanocrystalline hydroxyapatite compared to natural bone, whereas osteoclast and osteoblast functions on micron crystalline versions of these ceramics were much different than natural bone. In this manner, this study provides additional evidence that nanocrystalline calcium phosphates can serve as suitable synthetic

Magnetic properties of nanocrystalline Fe–10%Ni alloy obtained by planetary ball mills

International Nuclear Information System (INIS)

Hamzaoui, Rabah; Elkedim, Omar

2013-01-01

Highlights: •Solid solution formation accompanied by a grain refinement for nanocrystalline Fe-Ni. •The shock mode process (SMP) prevails when Ω > >ω. •The friction mode process (FMP) is stronger when Ω < <ω. •The FMP leads to the formation of alloys exhibiting a soft magnetic behavior. -- Abstract: Planetary ball mill PM 400 from Retsch (with different milling times for Ω = 400 rpm, ω = 800 rpm) and P4 vario ball mill from Fritsch (with different milling conditions (Ω/ω), Ω and ω being the disc and the vial rotation speeds, respectively) are used for obtaining nanocrystalline Fe–10wt% Ni. The structure and magnetic properties are studied by using X-ray diffraction, SEM and hysteresis measurements, respectively. The bcc-Fe(Ni) phase formation is identified by X-ray diffraction. The higher the shock power and the higher milling time are, the larger the bcc lattice parameter and the lower the grain size. The highest value of the coercivity is 1600 A/m for Fe–10 wt.%Ni (with shock mode (424 rpm/100 rpm) after 36 h of milling), while the lowest value is 189 A/m for (400 rpm/800 rpm) after 72 h of milling. The milling performed in the friction mode has been found to lead the formation of alloys exhibiting a soft magnetic behavior for nanocrystalline Fe–10%Ni

Synthesis, characterization, and photocatalytic properties of core/shell mesoporous silica nanospheres supporting nanocrystalline titania

International Nuclear Information System (INIS)

Cendrowski, K.; Chen, X.; Zielinska, B.; Kalenczuk, R. J.; Rümmeli, M. H.; Büchner, B.; Klingeler, R.; Borowiak-Palen, E.

2011-01-01

The facile bulk synthesis of silica nanospheres makes them an attractive support for the transport of chemical compounds such as nanocrystalline titanium dioxide. In this contribution we present a promising route for the synthesis of mesoporous silica nanospheres (m-SiO 2 ) with diameter in range 200 nm, which are ideal supports for nanocrystalline titanium dioxide (TiO 2 ). The detailed microscopic and spectroscopic characterizations of core/shell structure (m-SiO 2 /TiO 2 ) were conducted. Moreover, the photocatalytic potential of the nanostructures was investigated via phenol decomposition and hydrogen generation. A clear enhancement of photoactivity in both reactions as compared to commercial TiO 2 -Degussa P25 catalyst is detected.

Synthesis, characterization, and photocatalytic properties of core/shell mesoporous silica nanospheres supporting nanocrystalline titania

Science.gov (United States)

Cendrowski, K.; Chen, X.; Zielinska, B.; Kalenczuk, R. J.; Rümmeli, M. H.; Büchner, B.; Klingeler, R.; Borowiak-Palen, E.

2011-11-01

The facile bulk synthesis of silica nanospheres makes them an attractive support for the transport of chemical compounds such as nanocrystalline titanium dioxide. In this contribution we present a promising route for the synthesis of mesoporous silica nanospheres (m-SiO2) with diameter in range 200 nm, which are ideal supports for nanocrystalline titanium dioxide (TiO2). The detailed microscopic and spectroscopic characterizations of core/shell structure (m-SiO2/TiO2) were conducted. Moreover, the photocatalytic potential of the nanostructures was investigated via phenol decomposition and hydrogen generation. A clear enhancement of photoactivity in both reactions as compared to commercial TiO2-Degussa P25 catalyst is detected.

Ion-implantation of erbium into the nanocrystalline diamond thin films

Czech Academy of Sciences Publication Activity Database

Nekvindová, P.; Babchenko, Oleg; Cajzl, J.; Kromka, Alexander; Macková, Anna; Malinský, Petr; Oswald, Jiří; Prajzler, Václav; Remeš, Zdeněk; Varga, Marián

2016-01-01

Roč. 18, 7-8 (2016), s. 679-684 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : nanocrystalline diamond * optical waveguides * erbium * luminescence * ion implantation * CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.449, year: 2016

Effects of partial replacement of silica with surface modified nanocrystalline cellulose on properties of natural rubber nanocomposites

Directory of Open Access Journals (Sweden)

Y. F. Luo

2012-01-01

Full Text Available Nanocrystalline cellulose was modified by 3-aminopropyl-triethoxysilane (KH550. The modified nanocrystalline cellulose (MNCC was further investigated to partially replace silica in natural rubber (NR composites via coagulation. NR/MNCC/silica and NR/nanocrystalline cellulose (NCC/silica nanocomposites were prepared. Through the comparison of vulcanization characteristics, processing properties of compounds and mechanical properties, compression fatigue properties, dynamic mechanical performance of NR/MNCC/silica and NR/NCC/silica nanocomposites, MNCC was proved to be more efficient than NCC. MNCC could activate the vulcanization process, suppress Payne effect, increase 300% modulus, tear strength and hardness, and reduce the heat build-up and compression set. Moreover, fine MNCC dispersion and strong interfacial interaction were achieved in NR/MNCC/silica nanocomposites. The observed reinforcement effects were evaluated based on the results of apparent crosslinking density (Vr, thermo-gravimetric (TG and scanning electron microscopic (SEM analyses of NR/MNCC/silica in comparison with NR/NCC/silica nanocomposites.

BIOCHIP AND LAB-ON-CHIP FOR GENOMIC AND PROTEOMIC APPLICATIONS

OpenAIRE

Rotiroti, Lucia

2008-01-01

There is no other inorganic material that brings together such much intriguing features like porous silicon (PSi) for people working in the optical sensing field. Porous silicon was unexpectedly discovered in the late fifties when chemists attempted to electropolish silicon wafers with an electrolyte containing hydrofluoric acid to get better electrical contacts in the first integrated electronic circuit fabrications. The acid dissolution left a sponge-like nanocrystalline silicon structure o...

Some aspects of nanocrystalline nickel and zinc ferrites processed using microemulsion technique

NARCIS (Netherlands)

Misra, RDK; Kale, A; Kooi, BJ; De Hosson, JTM

2003-01-01

Nanocrystalline nickel and zinc ferrites synthesised using a microemulsion technique were characterised by high resolution transmission electron microscopy and vibrating sample magnetometry. A narrow and uniform distribution of crystals of size range 5-8 nm, distinguished by a clear lack of

Defect formation and recrystallization in the silicon on sapphire films under Si{sup +} irradiation

Energy Technology Data Exchange (ETDEWEB)

Shemukhin, A.A., E-mail: shemuhin@gmail.com [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Nazarov, A.V.; Balakshin, Yu. V. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Chernysh, V.S. [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow (Russian Federation); Faculty of Physics, Lomonosov Moscow State University, Moscow (Russian Federation)

2015-07-01

Silicon-on-sapphire (SOS) is one of the most promising silicon-on-insulator (SOI) technologies. SOS structures are widely used in microelectronics, but to meet modern requirements the silicon layer should be 100 nm thick or less. The problem is in amount of damage in the interface layer, which decreases the quality of the produced devices. In order to improve the crystalline structure quality SOS samples with 300 nm silicon layers were implanted with Si{sup +} ions with energies in the range from 180 up to 230 keV with fluences in the range from 10{sup 14} up to 5 × 10{sup 15} cm{sup −2} at 0 °C. The crystalline structure of the samples was studied with RBS and the interface layer was studied with SIMS after subsequent annealing. It has been found out that to obtain silicon films with high lattice quality it is necessary to damage the sapphire lattice near the silicon–sapphire interface. Complete destruction of the strongly defected area and subsequent recrystallization depends on the energy of implanted ions and the substrate temperature. No significant mixing in the interface layer was observed with the SIMS.

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

High-performance RF coil inductors on silicon

Energy Technology Data Exchange (ETDEWEB)

Malba, V.; Young, D.; Ou, J.J.; Bernhardt, A.F.; Boser, B.E.

1998-03-01

Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

Silicon microspheres for near-IR communication applications

International Nuclear Information System (INIS)

Serpengüzel, Ali; Demir, Abdullah

2008-01-01

We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90° and 0° in the o-band at 1.3 µm for a 15 µm radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10 7 and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90° elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0° elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration

Synthesis and photocatalytic activity of mesoporous nanocrystalline Fe-doped titanium dioxide

KAUST Repository

Qamar, Mohd; Merzougui, Belabbes A.; Anjum, Dalaver H.; Hakeem, Abbas Saeed; Yamani, Zain Hassan; Bahnemann, Detlef W.

2014-01-01

Synthesis of mesoporous nanocrystalline iron-doped titania following the sol-gel method is presented in this work. Samples with various molar ratios (0.1, 0.25, 0.5, 1.0, 2.5, 5.0, 10 and 20%) of Fe to Ti were prepared. The particle size was found

Performance characterization of silicon pore optics

Science.gov (United States)

Collon, M. J.; Kraft, S.; Günther, R.; Maddox, E.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Wallace, K.; Krumrey, M.; Cibik, L.; Freyberg, M.

2006-06-01

The characteristics of the latest generation of assembled silicon pore X-ray optics are discussed in this paper. These very light, stiff and modular high performance pore optics (HPO) have been developed [1] for the next generation of astronomical X-ray telescopes, which require large collecting areas whilst achieving angular resolutions better than 5 arcseconds. The suitability of 12 inch silicon wafers as high quality optical mirrors and the automated assembly process are discussed elsewhere in this conference. HPOs with several tens of ribbed silicon plates are assembled by bending the plates into an accurate cylindrical shape and directly bonding them on top of each other. The achievable figure accuracy is measured during assembly and in test campaigns at X-ray testing facilities like BESSY-II and PANTER. Pencil beam measurements allow gaining information on the quality achieved by the production process with high spatial resolution. In combination with full beam illumination a complete picture of the excellent performance of these optics can be derived. Experimental results are presented and discussed in detail. The results of such campaigns are used to further improve the production process in order to match the challenging XEUS requirements [2] for imaging resolution and mass.

Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide

Science.gov (United States)

Leveneur, J.; Langlois, M.; Kennedy, J.; Metson, James B.

2017-10-01

In micro- and nano- electronic device fabrication, and particularly 3D designs, the diffusion of a metal into sublayers during annealing needs to be minimized as it is usually detrimental to device performance. Diffusion also causes the formation and growth of nanoprecipitates in solid matrices. In this paper, the diffusion behavior of low energy, low fluence, ion implanted iron into a thermally grown silicon oxide layer on silicon is investigated. Different ion beam analysis and imaging techniques were used. Magnetization measurements were also undertaken to provide evidence of nanocrystalline ordering. While standard vacuum furnace annealing and electron beam annealing lead to fast diffusion of the implanted species towards the Si/SiO2 interface, we show that furnace annealing in an oxygen rich atmosphere prevents the diffusion of iron that, in turn, limits the growth of the nanoparticles. The diffusion and particle growth is also greatly reduced when oxygen atoms are implanted in the SiO2 prior to Fe implantation, effectively acting as a diffusion barrier. The excess oxygen is hypothesized to trap Fe atoms and reduce their mean free path during the diffusion. Monte-Carlo simulations of the diffusion process which consider the random walk of Fe, Fick's diffusion of O atoms, Fe precipitation, and desorption of the SiO2 layer under the electron beam annealing were performed. Simulation results for the three preparation conditions are found in good agreement with the experimental data.

The Linear Thermal Expansion of Bulk Nanocrystalline Ingot Iron from Liquid Nitrogen to 300 K.

Science.gov (United States)

Wang, S G; Mei, Y; Long, K; Zhang, Z D

2009-09-17

The linear thermal expansions (LTE) of bulk nanocrystalline ingot iron (BNII) at six directions on rolling plane and conventional polycrystalline ingot iron (CPII) at one direction were measured from liquid nitrogen temperature to 300 K. Although the volume fraction of grain boundary and residual strain of BNII are larger than those of CPII, LTE of BNII at the six measurement directions were less than those of CPII. This phenomenon could be explained with Morse potential function and the crystalline structure of metals. Our LTE results ruled out that the grain boundary and residual strain of BNII did much contribution to its thermal expansion. The higher interaction potential energy of atoms, the less partial derivative of interaction potential energy with respect to temperature T and the porosity free at the grain boundary of BNII resulted in less LTE in comparison with CPII from liquid nitrogen temperature to 300 K. The higher LTE of many bulk nanocrystalline materials resulted from the porosity at their grain boundaries. However, many authors attributed the higher LTE of many nanocrystalline metal materials to their higher volume fraction of grain boundaries.

The Linear Thermal Expansion of Bulk Nanocrystalline Ingot Iron from Liquid Nitrogen to 300 K

Directory of Open Access Journals (Sweden)

Mei Y

2009-01-01

Full Text Available Abstract The linear thermal expansions (LTE of bulk nanocrystalline ingot iron (BNII at six directions on rolling plane and conventional polycrystalline ingot iron (CPII at one direction were measured from liquid nitrogen temperature to 300 K. Although the volume fraction of grain boundary and residual strain of BNII are larger than those of CPII, LTE of BNII at the six measurement directions were less than those of CPII. This phenomenon could be explained with Morse potential function and the crystalline structure of metals. Our LTE results ruled out that the grain boundary and residual strain of BNII did much contribution to its thermal expansion. The higher interaction potential energy of atoms, the less partial derivative of interaction potential energy with respect to temperature T and the porosity free at the grain boundary of BNII resulted in less LTE in comparison with CPII from liquid nitrogen temperature to 300 K. The higher LTE of many bulk nanocrystalline materials resulted from the porosity at their grain boundaries. However, many authors attributed the higher LTE of many nanocrystalline metal materials to their higher volume fraction of grain boundaries.

Microstructure and magnetic properties of rapidly solidified nanocrystalline Fe81Zr7B12 alloy

International Nuclear Information System (INIS)

Xiong, X.Y.; Muddle, B.C.; Finlayson, T.R.

2000-01-01

Full text: Nanocrystalline Fe-Zr-B alloys have aroused extensive research interest due to their high saturation magnetization. There have been several studies [Suzuki et al., 1994; Kim et al., 1994] of the effect of boron on the formation of nanocrystalline structure and magnetic properties, showing that the addition of boron to Fe-Zr alloys improves the glass-forming ability and refines the primary bcc α-Fe grains during crystallization. However, when the boron content is increased to 8 at.%, the magnetic permeability is observed to decrease. There has been no detailed work to date concerning the microstructural evolution and magnetic properties in those alloys with higher boron content

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Fabrication and properties of Er-doped nanocrystalline phase-seperated optical fibers

Czech Academy of Sciences Publication Activity Database

Dhar, Anirban; Kašík, Ivan; Podrazký, Ondřej; Matějec, Vlastimil

2013-01-01

Roč. 11, č. 1 (2013), s. 29-35 ISSN 1336-1376 R&D Projects: GA ČR GPP102/10/P554; GA ČR GAP102/10/2139 Institutional support: RVO:67985882 Keywords : Er-doping * Phase-separated glass * Nano-crystalline optical fiber Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Extrinsic passivation of silicon surfaces for solar cells

OpenAIRE

Bonilla, R.S.; Reichel, C.; Hermle, M.; Martins, G.; Wilshaw, P.R.

2015-01-01

In the present work we study the extent to which extrinsic chemical and field effect passivation can improve the overall electrical passivation quality of silicon dioxide on silicon. Here we demonstrate that, when optimally applied, extrinsic passivation can produce surface recombination velocities below 1.2 cm/s in planar 1 Omega cm n-type Si. This is largely due to the additional field effect passivation component which reduces the recombination velocity below 2.13 cm/s. On textured surface...

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Functionalization of nanocrystalline diamond films with phthalocyanines

Energy Technology Data Exchange (ETDEWEB)

Petkov, Christo [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reintanz, Philipp M. [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Kulisch, Wilhelm [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Degenhardt, Anna Katharina [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Weidner, Tobias [Max Planck Institute for Polymer Research, Mainz (Germany); Baio, Joe E. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR (United States); Merz, Rolf; Kopnarski, Michael [Institut für Oberflächen- und Schichtanalytik (IFOS), Kaiserslautern (Germany); Siemeling, Ulrich [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reithmaier, Johann Peter [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Popov, Cyril, E-mail: popov@ina.uni-kassel.de [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany)

2016-08-30

Highlights: • Grafting of phthalocyanines on nanocrystalline diamond films with different terminations. • Pc with different central atoms and side chains synthesized and characterized. • Attachment of Pc on H- and O-terminated NCD studied by XPS and NEXAFS spectroscopy. • Orientation order of phthalocyanine molecules on NCD surface. - Abstract: Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

Ambient plasma treatment of silicon wafers for surface passivation recovery

Science.gov (United States)

Ge, Jia; Prinz, Markus; Markert, Thomas; Aberle, Armin G.; Mueller, Thomas

2017-08-01

In this work, the effect of an ambient plasma treatment powered by compressed dry air on the passivation quality of silicon wafers coated with intrinsic amorphous silicon sub-oxide is investigated. While long-time storage deteriorates the effective lifetime of all samples, a short ambient plasma treatment improves their passivation qualities. By studying the influence of the plasma treatment parameters on the passivation layers, an optimized process condition was identified which even boosted the passivation quality beyond its original value obtained immediately after deposition. On the other hand, the absence of stringent requirement on gas precursors, vacuum condition and longtime processing makes the ambient plasma treatment an excellent candidate to replace conventional thermal annealing in industrial heterojunction solar cell production.

Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons

Energy Technology Data Exchange (ETDEWEB)

Z. Zak Fang, H. Y. Sohn

2009-03-10

This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation

Czech Academy of Sciences Publication Activity Database

Frgala, Z.; Jašek, O.; Karásková, M.; Zajíčková, L.; Buršíková, V.; Franta, D.; Matějková, Jiřina; Rek, Antonín; Klapetek, P.; Buršík, Jiří

2006-01-01

Roč. 56, Suppl. B (2006), s. 1218-1223 ISSN 0011-4626 R&D Projects: GA ČR(CZ) GA202/05/0607 Institutional research plan: CEZ:AV0Z20650511; CEZ:AV0Z20410507 Keywords : nanocrystalline diamond * plasma enhanced chemical vapor deposition * self-bias Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.568, year: 2006

Nanocrystalline functional materials and nanocomposites synthesis through aerosol routes

Directory of Open Access Journals (Sweden)

Milošević Olivera B.

2003-01-01

Full Text Available This paper represents the results of the design of functional nanocrystalline powders and nanocomposites using chemical reactions in aerosols. The process involves ultrasonic aerosol formation (mist generators with the resonant frequencies of 800 kHz, 1.7 and 2.5 MHz from precursor salt solutions and control over the aerosol decomposition in a high-temperature tubular flow reactor. During decomposition, the aerosol droplets undergo evaporation/drying, precipitation and thermolysis in a single-step process. Consequently, spherical, solid, agglomerate-free submicronic particles are obtained. The particle morphology, revealed as a composite structure consisting of primary crystallites smaller than 20 nm was analysed by several methods (XRD, DSC/DTA, SEM, TEM and discussed in terms of precursor chemistry and process parameters. Following the initial attempts, a more detailed aspect of nanocrystalline particle synthesis was demonstrated for the case of nanocomposites based on ZnO-MeO (MeO=Bi Cr+, suitable for electronic applications, as well as an yttrium-aluminum base complex system, suitable for phosphorus applications. The results imply that parts of the material structure responsible for different functional behaviour appear through in situ aerosol synthesis by processes of intraparticle agglomeration, reaction and sintering in the last synthesis stage.

Investigation of (Fe,Co)NbB-Based Nanocrystalline Soft Magnetic Alloys by Lorentz Microscopy and Off-Axis Electron Holography.

Science.gov (United States)

Zheng, Changlin; Kirmse, Holm; Long, Jianguo; Laughlin, David E; McHenry, Michael E; Neumann, Wolfgang

2015-04-01

The relationship between microstructure and magnetic properties of a (Fe,Co)NbB-based nanocrystalline soft magnetic alloy was investigated by analytical transmission electron microscopy (TEM). The microstructures of (Fe0.5Co0.5)80Nb4B13Ge2Cu1 nanocrystalline alloys annealed at different temperatures were characterized by TEM and electron diffraction. The magnetic structures were analyzed by Lorentz microscopy and off-axis electron holography, including quantitative measurement of domain wall width, induction, and in situ magnetic domain imaging. The results indicate that the magnetic domain structure and particularly the dynamical magnetization behavior of the alloys strongly depend on the microstructure of the nanocrystalline alloys. Smaller grain size and random orientation of the fine particles decrease the magneto-crystalline anisotropy and suggests better soft magnetic properties which may be explained by the anisotropy model of Herzer.

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

Science.gov (United States)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

International Nuclear Information System (INIS)

Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

2009-01-01

Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

Cost-effectiveness of silicone and alginate impressions for complete dentures.

Science.gov (United States)

Hulme, C; Yu, G; Browne, C; O'Dwyer, J; Craddock, H; Brown, S; Gray, J; Pavitt, S; Fernandez, C; Godfrey, M; Dukanovic, G; Brunton, P; Hyde, T P

2014-08-01

The aim of this study was to assess the cost effectiveness of silicone and alginate impressions for complete dentures. Cost effectiveness analyses were undertaken alongside a UK single centre, double blind, controlled, crossover clinical trial. Taking the perspective of the healthcare sector, effectiveness is measured using the EuroQol (EQ-5D-3L) which provides a single index value for health status that may be combined with time to produce quality adjusted life years (QALYs); and Oral Health Impact Profile (OHIP-EDENT). Incremental cost effectiveness ratios are presented representing the additional cost per one unit gained. Mean cost was higher in the silicone impression group (£388.57 vs. £363.18). Negligible between-group differences were observed in QALY gains; the silicone group had greater mean OHIP-EDENT gains. The additional cost using silicone was £3.41 per change of one point in the OHIP-EDENT. The silicone group was more costly, driven by the cost of materials. Changes in the EQ-5D and QALY gains over time and between arms were not statistically significant. Change in OHIP-EDENT score showed greater improvement in the silicone group and the difference between arms was statistically significant. Given negligible QALY gains and low level of resource use, results must be treated with caution. It is difficult to make robust claims about the comparative cost-effectiveness. Silicone impressions for complete dentures improve patients' quality of life (OHIP-EDENT score). The extra cost of silicone impressions is £30 per patient. Dentists, patients and health care funders need to consider the clinical and financial value of silicone impressions. Different patients, different dentists, different health funders will have individual perceptions and judgements. ISRCTN01528038. NIHR-RfPB grant PB-PG-0408-16300. This article forms part of a project for which the author (TPH) won the Senior Clinical Unilever Hatton Award of the International Assocation for Dental

Elemental separation in nanocrystalline Cu-Al alloys

Science.gov (United States)

Wang, Y. B.; Liao, X. Z.; Zhao, Y. H.; Cooley, J. C.; Horita, Z.; Zhu, Y. T.