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Sample records for quality cu films

  1. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  2. Growth of high-quality CuInSe sub 2 polycrystalline films by magnetron sputtering and vacuum selenization

    CERN Document Server

    Xie Da Tao; Wang Li; Zhu Feng; Quan Sheng Wen; Meng Tie Jun; Zhang Bao Cheng; Chen J

    2002-01-01

    High-quality CuInSe sub 2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu sub 1 sub 1 In sub 9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe sub 2 films were uniform and densely packed with a grain size of about 3.0 mu m

  3. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  4. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  5. Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach

    Science.gov (United States)

    Zhang, Yiwen; Ito, Manabu; Tamura, Tomoaki; Yamada, Akira; Konagai, Makoto

    2011-04-01

    To improve the quality of CuInSe2 (CIS) thin films fabricated by a non-vacuum, nanoparticle-based approach, in this study, two categories of nanoparticles, Cu (InGa) Se2 (CIGS) nanoparticles and copper selenide (Cu-Se) with indium selenide (In-Se) nanoparticles are investigated. It is found that the Cu-Se with In-Se nanoparticles show a higher crystallization velocity than CIGS nanoparticles. The films obtained from Cu-Se with In-Se nanoparticles exhibit higher crystallinity with a larger grain size. Thiourea is applied as a sintering additive during the selenization process. It is clarified that the addition of thiourea is very effective for grain growth and the fabrication of a dense CIS layer. The cell performance is measured under Air Mass 1.5 irradiation. The efficiency of the solar cell, fabricated using Cu-Se, In-Se nanoparticles with thiourea, is 2.15%, higher than that of the solar cell fabricated using CIGS nanoparticles, which is 0.28%.

  6. Fabrication and characterization of high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y thin films on LSAT substrates

    CERN Document Server

    Ogawa, A; Sugano, T; Adachi, S; Suzuki, K; Nakagaki, N; Enomoto, Y; Tanabe, K

    2002-01-01

    We have succeeded in fabricating high-quality (Hg,Re)Ba sub 2 CaCu sub 2 O sub y ((Hg,Re)-1212) thin films with a thickness of 300 nm on (LaAlO sub 3) sub 0 sub . sub 3 -(SrAl sub 0 sub . sub 5 Ta sub 0 sub . sub 5 O sub 3) sub 0 sub . sub 7 (LSAT) substrates. The films were fabricated by repeating the two-step process, which consists of the preparation of a precursor film and the heat treatment in Hg-vapour atmosphere. For the purpose of improving their crystal quality, the heat treatment in the final process was carried out in a lower Hg-vapour pressure for a longer time. The obtained films had a flat surface and no appreciable outgrowth. The films exhibited a T sub c value of 120 K and a J sub c value of 4.4 x 10 sup 6 A cm sup - sup 2 at 77 K in a self-field, which are substantially higher than those for the films fabricated in higher Hg-vapour atmosphere. Their electrical transport properties in magnetic fields up to 7 T were investigated. Their lower irreversibility fields at 77 K as well as the higher ...

  7. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  8. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  9. CuS Thin Films Obtained by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Violeta POPESCU

    2004-02-01

    Full Text Available The paper presents a study concerning the influence of deposition parameters (reagents, electron donors, surfactants, temperature of the substrate, number of consecutive layers, spraying rate on the quality of CuS thin films achieved by spray pyrolysis on glass substrate, from solutions containing CuCl2·2H2O, thiourea, electron pair donors and surfactants. As electron pairs donors ammonia and triethanolamine were used and as surfactants C12 - C14 ether-sulphate, sodium lauryl-sulphate and cetyl-pyridinium bromide were used. The optimum conditions for the obtaining of optically clear, compact and adherent CuS thin films, showing different colors in reflected light (violet, yellow, brawn, green and exhibiting in VIS and NIR light appropriate reflectance and transmittance for utilization for solar control applications were established. The film thickness falls in the range 10- 50 nm.

  10. Structure and magnetic properties of Ni/Cu/Fe/MgO(001) films.

    Science.gov (United States)

    Lauhoff, G; Vaz, C A F; Bland, J A C

    2009-04-15

    The structural and magnetic properties of thin Ni films grown on Cu/Fe/MgO(001) and Cu/MgO(001) buffer layers are investigated and compared to those grown on Cu/Si(001). The use of an Fe seed layer a few monolayers thick leads to the epitaxial growth of high surface quality Cu(001) buffer layers on MgO(001), while Cu growth on the bare MgO(001) substrate results in polycrystalline films. Magneto-optic Kerr effect magnetometry shows that Ni films grown on Cu/Fe/MgO(001) exhibit dominant perpendicular magnetic anisotropy up to ∼90 Å, which is similar to that of Ni films grown on Cu/Si(001). The polycrystalline Ni films also exhibit perpendicular magnetic remanence, but with a dominant in-plane magnetization component.

  11. Structure and magnetic properties of Ni/Cu/Fe/MgO(001) films

    Energy Technology Data Exchange (ETDEWEB)

    Lauhoff, G; Vaz, C A F; Bland, J A C [Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (United Kingdom)], E-mail: georglauhoff@georglauhoff.com, E-mail: carlos.vaz@cantab.net

    2009-04-15

    The structural and magnetic properties of thin Ni films grown on Cu/Fe/MgO(001) and Cu/MgO(001) buffer layers are investigated and compared to those grown on Cu/Si(001). The use of an Fe seed layer a few monolayers thick leads to the epitaxial growth of high surface quality Cu(001) buffer layers on MgO(001), while Cu growth on the bare MgO(001) substrate results in polycrystalline films. Magneto-optic Kerr effect magnetometry shows that Ni films grown on Cu/Fe/MgO(001) exhibit dominant perpendicular magnetic anisotropy up to {approx}90 A, which is similar to that of Ni films grown on Cu/Si(001). The polycrystalline Ni films also exhibit perpendicular magnetic remanence, but with a dominant in-plane magnetization component.

  12. Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

    Institute of Scientific and Technical Information of China (English)

    YAN You-hua; LIU Ying-chun; FANG Ling; ZHU Jing-sen; ZHAO Hai-hua; LI De-ren; LU Zhi-chao; ZHOU Shao-xiong

    2008-01-01

    CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 104cm-1 with optical band gap Eg close to 1.4 eV.

  13. Faceting of (001) CeO{sub 2} Films: The Road to High Quality TFA-YBa{sub 2}Cu{sub 3}O{sub 7} Multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Coll, M [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Gazquez, J [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Sandiumenge, F [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Pomar, A [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Puig, T [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Obradors, X [Institut de Ciencia de Materials de Barcelona, C.S.I.C., Campus U.A.Barcelona, 08193 Bellaterra (Spain); Espinos, J P [Instituto de Ciencia de Materiales de Sevilla, C.S.I.C., Avda. Americo Vespucio s/n Isla de la Cartuja, 41092 Sevilla (Spain); Gonzalez-Elipe, A R [Instituto de Ciencia de Materiales de Sevilla, C.S.I.C., Avda. Americo Vespucio s/n Isla de la Cartuja, 41092 Sevilla (Spain)

    2006-06-01

    CeO{sub 2} films are technologically important as a buffer layer for the integration of superconducting YBa{sub 2}Cu{sub 3}O{sub 7} films on biaxially textured Ni substrates. The growth of YBa{sub 2}Cu{sub 3}O{sub 7} layers on the CeO{sub 2} cap layers by the trifluoroacetate (TFA) route remains a critical issue. To improve the accommodation of YBa{sub 2}Cu{sub 3}O{sub 7} on CeO{sub 2}, surface conditioning or CeO{sub 2} is required. In this work we have applied ex-situ post-processes at different atmospheres to the CeO{sub 2} layers deposited on YSZ single crystals using rf sputtering. XPS analysis showed that post-annealing CeO{sub 2} layer in Ar/H{sub 2}/H{sub 2}O catalyses in an unexpected way the growth of (001)- terraces. We also report on the growth conditions of YBa{sub 2}Cu{sub 3}O{sub 7}-TFA on CeO{sub 2} buffered YSZ single crystal grown by chemical solution deposition and we compare them with those leading to optimized YBa{sub 2}Cu{sub 3}O{sub 7}-TFA films on LaAlO{sub 3} single crystals. Critical currents up to 1.6 MA/cm{sup 2} at 77 K have been demonstrated in 300 nm thick YBa{sub 2}Cu{sub 3}O{sub 7} layers on CeO{sub 2}/YSZ system. The optimized processing conditions have then been applied to grow YBa{sub 2}Cu{sub 3}O{sub 7}-TFA films on Ni substrates having vacuum deposited cap layers of CeO{sub 2}.

  14. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    Science.gov (United States)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-03-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  15. Improvement of the multilayer morphology (alumina/Cu/YIG/Cu) to characterize YIG thin film

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, Ismail; Siblini, Ali; Chatelon, Jean Pierre; Blanc-Mignon, Marie Francoise; Rousseau, Jean Jacques [Universite de Saint Etienne, Jean Monnet, 42023 Saint Etienne (France); Universite de Lyon (France)

    2011-07-15

    The aim of our study is to characterize yttrium iron garnet (YIG) thin film for its applications in the microwaves and magneto-optical domains. For this purpose, we have manufactured a microinductor by deposition of YIG film between two copper layers on an alumina substrate. Multilayers have been deposited by radio-frequency magnetron sputtering technique. Thin films of YIG are amorphous after deposition; a post-thermal annealing at 740 C for 2 h is necessary to obtain satisfactory magnetic properties. In this work, we have studied the effects of different parameters concerning the substrate surface state, deposition and post-thermal treatment of YIG and copper thin films on their structure and morphological properties. We have come against several mechanical and electrical problems: crack formation, detachment of YIG or Cu films from the substrate, deterioration of Cu films, open or short circuits. The roughness of alumina substrate and the annealing mode play an important role on the quality of the microinductor prototype. After several tests by varying different parameters, we have established a protocol permitting to manufacture a prototype of good quality. This prototype is characterized using: profilometry, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and a precision LCR meter. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Atomistic study of deposition process of Al thin film on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yongzhi, E-mail: yzcaohit@gmail.com [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China); Zhang Junjie; Sun Tao; Yan Yongda; Yu Fuli [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China)

    2010-08-01

    In this paper we report molecular dynamics based atomistic simulations of deposition process of Al atoms onto Cu substrate and following nanoindentation process on that nanostructured material. Effects of incident energy on the morphology of deposited thin film and mechanical property of this nanostructured material are emphasized. The results reveal that the morphology of growing film is layer-by-layer-like at incident energy of 0.1-10 eV. The epitaxy mode of film growth is observed at incident energy below 1 eV, but film-mixing mode commences when incident energy increase to 10 eV accompanying with increased disorder of film structure, which improves quality of deposited thin film. Following indentation studies indicate deposited thin films pose lower stiffness than single crystal Al due to considerable amount of defects existed in them, but Cu substrate is strengthened by the interface generated from lattice mismatch between deposited Al thin film and Cu substrate.

  17. ZrN/Cu nanocomposite film - a novel superhard material

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Zeman, P. [Univ. of West Bohemia, Plzen (Czech Republic). Dept. of Phys.; Hruby, H.; Mayrhofer, P.H. [Montanuniversitaet Leoben (Austria). Inst. fuer Metallkunde und Werkstoffpruefung

    1999-11-01

    This article reports on the structure and hardness of ZrCu-N films prepared by dc reactive magnetron sputtering of a ZrCu alloyed target in a mixture of Ar+N{sub 2} using a round planar unbalanced magnetron of diameter 100 mm. It was found that there is a strong correlation between the structure of the film and its hardness. The hard (<40 GPa) ZrCu-N films are characterized by many weak reflections from poly-oriented ZrN and Cu grains. In contrast, the superhard ({>=}40 GPa) ZrCu-N films are characterized by a strong reflection from ZrN grains with a dominate ZrN(111) orientation and no reflections from Cu. The superhard ZrCu-N films with a hardness of 54 GPa are nc-ZrN/Cu nanocomposite films composed of strongly oriented ZrN grains surrounded by a thin layer of Cu. These films exhibit a high elastic recovery of about 80% (determined by a microhardness tester) and contain approximately 1-2 wt.% Cu. The superhard nc-ZrN/Cu nanocomposite films represent a new class of superhard materials of the type nc-MeN/metal. (orig.)

  18. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    Energy Technology Data Exchange (ETDEWEB)

    Gottlob, Daniel M., E-mail: d.gottlob@fz-juelich.de [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47048 Duisburg (Germany); Jansen, Thomas [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Jülich-Aachen Research Alliance, Fundamentals for Future Information Technology (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich (Germany); Hoppe, Michael [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Bürgler, Daniel E. [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Jülich-Aachen Research Alliance, Fundamentals for Future Information Technology (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich (Germany); and others

    2014-07-01

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar{sup +}-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K.

  19. Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ye Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Cai Xingmin, E-mail: caixm@szu.edu.c [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai Fuping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China); Jing Shouyong [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China); Zhang Dongping; Fan Ping; Liu Lijun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China)

    2011-02-01

    Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O{sub 2} flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. Transmittance of the films decreases with increase in O{sub 2} flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In{sub 2}O{sub 3} and CuO. The sheet resistance of the films decreases with increase in O{sub 2} flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In{sub 2}O{sub 3} and the conduction mechanism of Cu-In-O thin films is through O vacancy. -- Research Highlights: {yields}Cu-In-O composite thin films were fabricated by DC sputtering at room temperature. {yields}The films are made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. {yields}The transmittance depends on the Cu content in the film. {yields}The direct optical band gap is around 4.1-4.4eV. {yields}The conducting mechanism is due to oxygen vacancy.

  20. Preparation and properties of CuInS{sub 2} thin film prepared from electroplated precursor

    Energy Technology Data Exchange (ETDEWEB)

    Onuma, Yoshio; Takeuchi, Kenji; Ichikawa, Sumihiro; Suzuki, Yasunari; Fukasawa, Ryo; Matono, Daisuke; Nakamura, Kenji; Nakazawa, Masao; Takei, Koji [Core Technology Research Laboratory, Shinko Electric Industries Co., Ltd., 80 Oshimada, Nagano 381-2287 (Japan)

    2006-01-15

    Thin CuInS{sub 2} films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS{sub 2} film followed. To determine whether the condition of the Cu/In alloy influences the CuInS{sub 2} quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS{sub 2} film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.

  1. Growth, structural and optical properties of Cu3N films

    NARCIS (Netherlands)

    Borsa, DM; Boerma, DO

    2004-01-01

    Thin films of Cu3N were grown on (001) MgO and (001) Cu substrates by molecular beam epitaxy of copper in the presence of nitrogen obtained from a radio frequency atomic source. The different aspects of the growth and the properties of the copper nitride films were investigated in relation with

  2. Nanoscale electrical properties of epitaxial Cu3Ge film

    Science.gov (United States)

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-07-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu.

  3. Nanoscale electrical properties of epitaxial Cu3Ge film

    Science.gov (United States)

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  4. Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

    Institute of Scientific and Technical Information of China (English)

    Zhao Bin; Zhao Ming-Tao; Zhang Yan-Fei; Yang Jun-He

    2013-01-01

    The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper in supercritical CO2 (scCO2).The effects of deposition temperature,precursor,and H2 concentration are investigated to optimize Cu deposition.Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2.A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films.For a H2concentration above 0.56 mol/L,the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases.Finally,a 20-nm thick Cu film with a smooth surface,which is required as a seed layer in advanced interconnects,is successfully deposited at a high H2 concentration (0.75 mol/L).

  5. Fabrication of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 thin films

    Science.gov (United States)

    Suzuki, Issei; Nagatani, Hiraku; Kita, Masao; Omata, Takahisa

    2017-09-01

    β-CuGaO2 shows promise as an absorber material for use in thin-film solar cells because of its direct and narrow band gap, causing intense light absorption and high theoretical maximum conversion efficiency. β-CuGaO2 thin films were fabricated using an ion-exchange whereby Na+ ions within a sputtered β-NaGaO2 thin film were replaced with Cu+ ions from a CuCl vapor. The band gap of the film was 1.45 eV, almost identical to that of the bulk material. The basic framework of the crystal structure and the orientation of the film were preserved following the ion-exchange. Methods of obtaining high-quality, stoichiometric β-CuGaO2 thin films free of cracks are discussed.

  6. Epitaxial growth of CuGaSe2 thin-films by MBE-Influence of the Cu/Ga ratio

    Science.gov (United States)

    Popp, Andreas; Pettenkofer, Christian

    2017-09-01

    By molecular beam epitaxy (MBE) CuGaSe2 (CGS) thin-films with varying Cu/Ga ratios were grown epitaxial on GaAs (100) and stepped GaAs (111)A substrates. Cu/Ga ratios from Cu-poor to Cu-rich were obtained. In this work the appearance of Cu crystallites on the surface of epitaxial CGS (001) layers are observed and strategies to avoid these precipitations are presented. High quality thin CGS films of around 100 nm thickness are obtained, enabling a detailed analysis of the electronic and chemical properties as well as of the crystal structure of the CGS surfaces. The electronic structure with respect to the Cu/Ga ratio was characterized in-situ by XPS and UPS. By LEED a (4 × 1) (Cu-poor and near stoichiometric) and a (4 × 2) (Cu-rich) reconstruction of a zinc blende structure were obtained. For CuGaSe2 (112) the LEED pattern showed a (3 × 1) chalcopyrite reconstruction for Cu/Ga ratios < 1. A (1 × 1) reconstruction of the chalcopyrite structure was observed for Cu-rich (112) samples. The observed dependence of the surface reconstruction on the stoichiometry for CGS grown on GaAs has not been reported in literature so far. Additionally, for Cu-rich stoichiometries a binary phase of Cu2-xSe appeared independently of orientation. The film morphology was investigated ex-situ by SEM.

  7. Fiscal 1994 New Sunshine Program achievement report. Development of photovoltaic power generation system practicalization technology - Research on practicalization of thin-film solar cell manufacturing technology (Technology for higher quality - Development of CuInSe{sub 2} solar cell manufacturing technology); 1994 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu (kohinshitsuka gijutsu (CuInSe{sub 2} taiyo denchi seizo no gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-03-01

    The aim is to develop solar cells that exhibit conversion efficiency of 12% in a 10cm times 10cm-large minimodule. When a substrate made of soda lime glass with an SiO{sub 2} coating thereon is used, high reproducibility is achieved in the manufacture of CuInSe{sub 2} (CIS) thin-film solar cells. For the manufacture of a high-quality Cu(InGa)Se{sub 2}(CIGS) light absorbing thin-film layer, it is necessary to develop high-quality precursor film manufacturing and gas phase selenization technologies. A laminated precursor film formed by sputtering is selenized in a H{sub 2}Se gas atmosphere for the formation of CuInSe{sub 2} and CIGS light absorbing thin-film layers, and 16 ZnO/CdS/CIS-structured thin film solar cells built into a 10cm times 10cm-large substrate exhibit conversion efficiency of 11.6%. A CIGS cell using a sulfur-containing Zn compound buffer layer exhibits conversion efficiency of 12.1%. Conditions for the manufacture of a ZnO:Al transparent conductive film are studied. Dependence of CIS-based solar cell output characteristics on temperature and irradiation may be compensated for under the JIS (Japanese Industrial Standard) compensatory formula. The CIS-based thin-film solar cell suffers but a little reduction in output due to temperature rise, and may be therefore said to be excellent. (NEDO)

  8. Tuning of properties of sprayed CuZnS films

    Science.gov (United States)

    Sreejith, M. S.; Deepu, D. R.; Kartha, C. Sudha; Vijayakumar, K. P.

    2014-04-01

    CuZnS is an alloy having mixed structure of CuxS and ZnS. Here we studied the structural, optical, compositional and electrical properties of CuZnS films prepared using chemical spray pyrolysis (CSP). Just by varying ratio of Cu to Zn was observed that material can be changed from P type to N type and electrical conductivity can be increased by 4 orders. Increase in concentration of Cu leads to decrease bandgap to 1.8 eV from 3.4 eV. CuZnS films having high concentration of copper can be used as good absorber and weakly doped films as buffer / window layers in solar cells.

  9. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

    OpenAIRE

    Korhonen, E.; Kuitunen, K.; Tuomisto, Filip; Urbaniak, A.; Igalson, M.; Larsen, J.; Gutay, L; Siebentritt, S; Tomm, Y.

    2012-01-01

    Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy. Peer reviewed

  10. Photoexcited Carrier Dynamics of Cu2S Thin Films.

    Science.gov (United States)

    Riha, Shannon C; Schaller, Richard D; Gosztola, David J; Wiederrecht, Gary P; Martinson, Alex B F

    2014-11-20

    Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this Letter, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deduced from the spectral evolution from 300 fs to 300 μs. Revealing the effects of grain morphology on the photophysical properties of Cu2S is a crucial step toward reaching high efficiencies in operationally stable Cu2S thin film photovoltaics.

  11. Electrodeposition and Characterization of CuTe and Cu2Te Thin Films

    Directory of Open Access Journals (Sweden)

    Wenya He

    2015-01-01

    Full Text Available An electrodeposition method for fabrication of CuTe and Cu2Te thin films is presented. The films’ growth is based on the epitaxial electrodeposition of Cu and Te alternately with different electrochemical parameter, respectively. The deposited thin films were characterized by X-ray diffraction (XRD, field emission scanning electronic microscopy (FE-SEM with an energy dispersive X-ray (EDX analyzer, and FTIR studies. The results suggest that the epitaxial electrodeposition is an ideal method for deposition of compound semiconductor films for photoelectric applications.

  12. Preparation of biaxially oriented TlCu-1234 thin films

    CERN Document Server

    Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

    1999-01-01

    The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

  13. Morphology Analysis of Cu Film Fractures in Sandwiched Methylmethacrylate Plates

    Directory of Open Access Journals (Sweden)

    Cristiano Fidani

    2015-06-01

    Full Text Available Thin films of Cu were evaporated on solid plates of polymethylmethacrylate (PMMA. A polymerization process was made to realize sandwiched structure to protect the Cu films. Fracturing of the metal film surface was observed with several morphologies showing two different fracture systems. Surface film morphology was analysed in terms of the distribution area of the islands and contour fractal dimension. The island areas showed a maximum corresponding to 42 nm of the Cu thickness, it was also the threshold to observe the second fracture system. The fractures pattern resulted to be scale invariant with fractal dimensions between 1.55 and 1.7. The minimum fractal dimension also occurred at the film thickness corresponding to the maximum island area. The reported effects can be understood on the basis of different thermal expansion coefficients of the two materials and their thermally induced adhesion.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6518

  14. Quantifying point defects in Cu2ZnSn(S,Se)4 thin films using resonant x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Stone, Kevin H. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA; Christensen, Steven T. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Harvey, Steven P. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Repins, Ingrid L. [National Renewable Energy Laboratory, Golden, Colorado 80401, USA; Toney, Michael F. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

    2016-10-17

    Cu 2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu 2ZnSnS4 (8.6% efficiency) and Cu 2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level of Cu Zn and Zn Cu defects on the 2c and 2d Wyckoff positions. We observe a significantly lower concentration of Zn Sn defects and Cu or Zn vacancies.

  15. Quantifying point defects in Cu2ZnSn(S,Se)4 thin films using resonant x-ray diffraction

    Science.gov (United States)

    Stone, Kevin H.; Christensen, Steven T.; Harvey, Steven P.; Teeter, Glenn; Repins, Ingrid L.; Toney, Michael F.

    2016-10-01

    Cu2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu2ZnSnS4 (8.6% efficiency) and Cu2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level of CuZn and ZnCu defects on the 2c and 2d Wyckoff positions. We observe a significantly lower concentration of ZnSn defects and Cu or Zn vacancies.

  16. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  17. Laser deposition of YBaCuO thin films: stress measurements and microstructure investigations

    Science.gov (United States)

    Gaboriaud, R. J.; Pailloux, F.

    1999-01-01

    Superconducting thin films of YBaCuO have been deposited by laser ablation at 750°C on MgO (001) single crystals. X-ray pole figures indicate a high crystalline quality of c-axis oriented films. A four-circle X-ray goniometer has been used for the measurements of the internal stress in the films by means of the fundamental metric tensor method generally used in the field of continuum mechanics. Microstructural investigation has been done by HRTEM on plan-view samples in order to study the film-substrate epitaxy relations from the observation of the moiré pattern brought about by the superimposition of both YBaCuO and MgO lattices (9% misfit). The results are discussed in terms of crystallographic accommodation and stress relaxation between the film and the substrate.

  18. Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

    Directory of Open Access Journals (Sweden)

    TSUNG-WEI CHANG

    2014-02-01

    Full Text Available In this study, copper indium selenide (CIS films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM, X-ray Diffraction (XRD, and Raman spectra.

  19. Unusual strain relaxation in Cu thin films on Ni(001)

    DEFF Research Database (Denmark)

    Rasmussen, F.B.; Baker, J.; Nielsen, M.;

    1997-01-01

    Surface x-ray diffraction has been used to study the growth of thin Cu films on Ni(001). We give direct evidence for the formation of embedded wedges with internal {111} facets in the film, as recently suggested by Muller et al. [Phys. Rev. Lett. 76, 2358 (1996)]. The unusual strain distribution...

  20. Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma Ligang [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China); Ma Shuyi, E-mail: maligang186@163.com [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China); Chen Haixia; Ai Xiaoqian; Huang Xinli [College of physics and Electronics Engineering, Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Northwest Normal University, Lanzhou, Gansu, 730070 (China)

    2011-09-15

    Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42 deg. at 350 deg. C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak ({approx}485 nm) and green peak ({approx}527 nm) increased noticeably after annealing. The origin of these emissions was discussed.

  1. Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

    Directory of Open Access Journals (Sweden)

    Javier A. Barón-Miranda

    2016-12-01

    Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

  2. MICROSTRUCTURE AND PROPERTIES OF C-Cu NANOSTRUCTURE THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.N. Sun; K.X. Zhang; X. Gao; D.Q. Yang; Z.D. Lin; Y. Guo

    2002-01-01

    Nanostructured C-Cu thin films were deposited by reactive sputtering method and co-sputtering method. The relationships between microstructures, properties, and depo-sition parameters were studied and the results obtained from TEM, AFM, and XPS.indicate that the thin films are nanostructural, and have good in-depth uniformity. Theselected area electron diffraction (SAED) found that the nanosize Cu particles havethe fcc structure and the others are amorphous carbon or nanocrystallized graphiticcarbon. The peak positions of the Cu and C in XPS indicate them to be at the ele-mental state. In the IR transmission spectrum, diamond two-phonon absorption andgraphite Raman peaks were observed, which suggests microcrystal diamond particlesand graphite components exist in the C-Cu film. The higher electrical resistivity wasobtained.

  3. Effect of Cu Content on TiN-Cu Nanocomposite Film Properties: Structural and Hardness Studies

    Directory of Open Access Journals (Sweden)

    M. M. Larijani

    2013-06-01

    Full Text Available Titanium nitride-Copper (TiN-Cu nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of the deposited films was studied using atomic force microscopy. Film hardness was estimated by a triboscope nanoindentation system. However, X-ray photoelectron spectroscopy analysis was performed to study the surface chemical bonding states. It was found that addition of soft Cu phase above 2 at.% to TiN film drastically decreased the film hardness from 30 to 2.8 Gpa due to lubricant effect of segregated copper particles. X-ray photoelectron spectroscopy results showed that Cu and TiN phases grew separately. In our case,the formation of a solid solution or chemical bonding between Cu and Ti was rejected.

  4. Chiral Recognition of Amino Acids by Magnetoelectrodeposited Cu Film Electrodes

    Directory of Open Access Journals (Sweden)

    Iwao Mogi

    2011-01-01

    Full Text Available Chiral behavior of magnetoelectrodeposited (MED Cu film electrodes was investigated for the electrochemical reactions of amino acids. The Cu films were electrodeposited under a magnetic field of 5 T perpendicular to the electrode surface. Such MED Cu films were employed as an electrode, and cyclic voltammograms were measured for the electrochemical reactions of several kinds of amino acids. Chiral behavior was clearly observed as oxidation current difference between the enantiomers of alanine, aspartic acid, and glutamic acid. The MED film electrodes with the thickness of 50~500 nm exhibited such chiral behavior, and their surface morphologies had network structures, which could be induced by the micro-MHD effect.

  5. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  6. Order twins in (111)-evaporated thin films of CuAu I. [Cu-Au

    Energy Technology Data Exchange (ETDEWEB)

    Zimmerman, R.; Broitman, E. (Dept. de Fisica, Univ. de Buenos Aires (Argentina)); Harriague, S.; Terlisky, S. (Comision Nacional de Energia Atomica, Buenos Aires (Argentina))

    1990-10-15

    The structure of evaporated CuAu I films in (111) orientation was studied by electron transmission and diffraction microscopy. The single-crystal films of Cu-Au alloy were prepared by vacuum evaporation and CuAu I ordered alloy was obtained by heating the disordered f.c.c. alloy to a temperature of 350deg C for 1 h. The electron micrograph revealed the presence of an intricate pattern of antiphase domain boundaries and the presence of twin lamellae. No microtwinning was observed. The CuAu I films exhibit a complex diffraction pattern. The geometry of the expected (111) reciprocal lattice plane has been calculated and described in detail. Extra reflections were identified as {l brace}101{r brace} twin spots and double-diffraction spots which originated from the twins. (orig.).

  7. Pulse-plating electrodeposition and annealing treatment of CuInSe2 films

    Institute of Scientific and Technical Information of China (English)

    LIU Fang-yang; L(U) Ying; ZHANG Zhi-an; LAI Yan-qing; LI Jie; LIU Ye-xiang

    2008-01-01

    CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.

  8. Cu patterning on Si substrate using solution-processed Ti-Cu oxide films and electroless plating

    Science.gov (United States)

    Miyazeki, Yusuke; Horiuchi, Yoshio; Noh, Joo-Hyong; Cordonier, Christopher E. J.; Honma, Hideo; Arakawa, Taro

    2016-09-01

    We demonstrated for the first time the Cu patterning on Si using Ti and Cu oxide (TiCu-ox) films patterned by photolithography and electroless plating without etching or surface modification. The TiCu-ox films had a porous structure and acted as adhesion layers. The TiCu-ox films were patterned by photolithography on Si and glass for comparison, followed by Cu deposition by electroless plating. Fine Cu patterns on the patterned TiCu-ox films were formed. The smallest line/space widths on glass and Si were 3.2/0.8 and 3.6/4.4 µm, respectively. The deposited Cu layers had high adhesion strength and low sheet resistance.

  9. Scanning electrochemical microscopy studies of micropatterned copper sulfide (Cu(x)S) thin films fabricated by a wet chemistry method.

    Science.gov (United States)

    Chen, Miao; Zhao, Jing; Zhao, Xiaocui

    2011-05-30

    Patterned copper sulfide (Cu(x)S) microstructures on Si (1 1 1) wafers were successfully fabricated by a relatively simple solution growth method using copper sulfate, ethylenediaminetetraacetate and sodium thiosulfate aqueous solutions as precursors. The Cu(x)S particles were selectively deposited on a patterned self-assembled monolayer of 3-aminopropyltriethoxysilane regions created by photolithography. To obtain high quality Cu(x)S films, preparative conditions such as concentration, proportion, pH and temperature of the precursor solutions were optimized. Various techniques such as optical microscopy, atomic force microscopy (AFM), X-ray diffraction, optical absorption and scanning electrochemical microscopy (SECM) were employed to examine the topography and properties of the micro-patterned Cu(x)S films. Optical microscopy and AFM results indicated that the Cu(x)S micro-pattern possessed high selectivity and clear edge resolution. From combined X-ray diffraction analysis and optical band gap calculations we conclude that Cu(9)S(5) (digenite) was the main phase within the resultant Cu(x)S film. Both SECM image and cyclic voltammograms confirmed that the Cu(x)S film had good electrical conductivity. Moreover, from SECM approach curve analysis, the apparent electron-transfer rate constant (k) in the micro-pattern of Cu(x)S dominated surface was estimated as 0.04 cm/s. The SECM current map showed high edge acuity of the micro-patterned Cu(x)S.

  10. Cu and Cu{sub 2}O films with semi-spherical particles grown by electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo, E-mail: yskang@sogang.ac.kr

    2012-12-01

    Cu and Cu{sub 2}O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO{sub 3}){sub 2} and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH {>=} 7, the pure Cu{sub 2}O films can be deposited. Especially, at pH = 11, the deposited Cu{sub 2}O films exhibited cubic surface morphology exposing mainly {l_brace}100{r_brace} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: Black-Right-Pointing-Pointer Cu and Cu{sub 2}O films were prepared by facile electrodeposition. Black-Right-Pointing-Pointer Electrodeposition was preformed in electrolyte at different pH values. Black-Right-Pointing-Pointer Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. Black-Right-Pointing-Pointer Semi-spherical Cu{sub 2}O films were obtained with solution at 11 pH and stirred for 2 weeks. Black-Right-Pointing-Pointer The possible growth mechanism of semi-spherical Cu{sub 2}O films was discussed.

  11. Solvothermal growth and morphology study of Cu 2Se films

    Science.gov (United States)

    Lin, Fei; Bian, Guo-Qing; Lei, Zhi-Xin; Lu, Zhe-Jun; Dai, Jie

    2009-05-01

    Solvothermal growth of cuprous selenide films on copper substrate has been succeeded by treating copper foil in the mixture of selenium powder and amines or hydrazine. The films were characterized by methods of XRD, SEM, TEM and optical spectra (Cu 2Se, JCPDS 47-1448). Films with hexagonal microcrystals can be obtained in hydrazine/water reaction system. When CTAB (CTAB = cetyltrimethylammonium bromide) is added to the system, the film is composed of thin leaf-like microcrystals. When ethylenediamine (en) is used as solvent, the leaf-like microcrystals are crimped.

  12. Preparation and characterization of microcrack-free thick YBa2Cu3O7-δ films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    High quality epitaxial YBa2Cu3O7-δ (YBCO) superconducting films were fabricated on (00l) LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness (up to 2.0 μm) without microcracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan (θ-2θ, ω-scan, pole figure) and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density (Jc) strongly depended on the film thickness.Furthermore, the reasons for these thickness dependences were elucidated in derail.

  13. 2D magnetic texture analysis of Co-Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Bayirli, Mehmet; Karaagac, Oznur; Kockar, Hakan [Balikesir Univ. (Turkey). Physics Dept.; Alper, Mursel [Uludag Univ., Bursa (Turkey). Physics Dept.

    2017-08-01

    The magnetic textures for the produced magnetic materials are important concepts in accordance with technical applications. Therefore, the aim of this article is to determine 2D magnetic textures of electrodeposited Co-Cu films by the measurement of hysteresis loops at the incremented angles. For that, Co-Cu films were deposited with different Co{sup 2+} in the electrolyte. In addition, the easy-axis orientation in the films from the squareness values of the angles, M{sub p}(β) obtained by the hysteresis loops have been numerically studied using the Fourier series analysis. The differences observed in the magnetic easy-axis distributions were attributed to changes of the incorporation of Co in the films with the change of Co{sup 2+} in the electrolyte. The coefficients of Fourier series (A{sub 0} and A{sub 2n}) were also computed for 2D films. It is seen that a systematic and small decrease in A{sub 0} and an obvious decrease in A{sub 2n} (n=1) were observed with increasing incorporated Co in the films. Results imply that interactions cause slightly demagnetization effect accordance with higher incorporation of Co in the films. Furthermore, the crystal structure of the Co-Cu films analysed by X-ray diffraction revealed that the films have dominantly face-centred cubic structure. Film contents analysed by energy-dispersive X-ray spectroscopy and film morphologies observed by scanning electron microscope also support the magnetic texture analysis results found by numerical computation.

  14. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  15. Investigation on CuO Dispersed PVA Polymer Films

    Directory of Open Access Journals (Sweden)

    R. Divya

    2015-05-01

    Full Text Available Addition of inorganic nanoparticles to polymers allows the modification of physical properties of polymers as well as the implementation of new features in polymer matrix. In the present work, we have made an attempt to disperse CuO nanoparticles in the polyvinyl alcohol (PVA and to understand the change in structural, optical and electrical properties of the polymer film. CuO nanoparticles were added in four different concentrations, viz. 2.5, 5.0, 7.5 and 10 wt%. A total of 5 films were prepared (including the pure PVA film, for comparison.The prepared films were subjected to XRD, FESEM, UV-Vis spectral, PL spectral and electrical analyses. The results obtained are reported.

  16. Cu{sub 2}ZnSnSe{sub 4} thin films prepared by selenization of co-electroplated Cu-Zn-Sn precursors

    Energy Technology Data Exchange (ETDEWEB)

    Chen Zhesheng, E-mail: zheshengchen@gmail.com [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Han Lei; Wan Lei [Research center for Photovoltaic System Engineering Ministry of Education, Hefei University of Technology, Hefei 230009 (China); Zhang Chunhui; Niu Haihong [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Xu Jinzhang, E-mail: xujz@lzu.edu.cn [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Research center for Photovoltaic System Engineering Ministry of Education, Hefei University of Technology, Hefei 230009 (China)

    2011-08-01

    A novel technique for growth of high quality Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu-Zn-Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 deg. C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu{sub 2}SnSe{sub 3} were not existed though they were difficult to distinguish both from EDS and XRD.

  17. Cu 2ZnSnSe 4 thin films prepared by selenization of co-electroplated Cu-Zn-Sn precursors

    Science.gov (United States)

    Chen, Zhesheng; Han, Lei; Wan, Lei; Zhang, Chunhui; Niu, Haihong; Xu, Jinzhang

    2011-08-01

    A novel technique for growth of high quality Cu 2ZnSnSe 4 (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu-Zn-Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 °C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu 2SnSe 3 were not existed though they were difficult to distinguish both from EDS and XRD.

  18. Morphology, structure, and properties of Cu-poor and Cu-rich Cu(In,Ga)Se2 films partially selenized using H2Se gas

    Science.gov (United States)

    Han, Anjun; Huang, Yongliang; Liu, Xiaohui; Xian, Wang; Meng, Fanying; Liu, Zhengxin

    2016-11-01

    Cu-poor and Cu-rich metallic precursors were prepared by cosputtering from In and Cu-Ga alloy targets and then partially selenized using H2Se gas. The properties of Cu(In,Ga)Se2 (CIGS) films are comparatively studied and the phase transition process is analyzed. The cosputtered metallic precursor has a rough morphology mostly covered by large In-rich nodules. After selenization, a large number of crumblike InSe grains were formed from the nodules on the surface of the Cu-rich film, whereas the Cu-poor film shows a dense surface. The selenized films comprise CIGS, Cu9(In,Ga)4 intermetallic, and the InSe phases. The proportion of the Cu9(In,Ga)4 phase in the Cu-rich film is more than that in the Cu-poor film. After annealing, the residual Cu9(In,Ga)4 of the Cu-poor film is eliminated. A negligible effect of Cu/(In+Ga) on the grain size can be observed. The CIGS solar cell with an efficiency of 15.1% was prepared by this method.

  19. Structural and optical properties of Zn doped CuInS2 thin films

    Indian Academy of Sciences (India)

    Mahdi H Suhail

    2012-11-01

    Copper indium sulphide (CIS) films were deposited by spray pyrolysis onto glass substrates from aqueous solutions of copper (II) sulphate, indium chloride and thiourea using compressed air as the carrier gas. The copper/indium molar ratio (Cu/In) in the solution 1(1:1) and the sulphur/copper ratio (S/Cu) was fixed at 4. Structural properties of these films were characterized. The effects of Zn (0–5%)molecular weight compared with CuInS2 Source and different substrate temperatures on films properties were investigated using X-ray diffraction (XRD) and optical transmission spectra. Optical characteristics of the CuInS2 films have been analysed using spectrophotometer in the wavelength range 300–1100 nm. The absorption spectra of the films showed that this compound is a direct bandgap material and gap values varied between 1.55 and 1.57 eV, depending on the substrate temperatures. Zn-doped samples have a bandgap energy of 1.55–1.95 eV. It was observed that there is an increase in optical bandgap with increasing Zn % molecular weight. The optical constants of the deposited films were obtained from the analysis of the experimentally recorded transmission and absorption spectral data. The refractive index, n and dielectric constants, 1 and 2, were also discussed and calculated as a function of investigated wavelength range and found it dependent on Zn incorporation. We found that the Zn-doped CuInS2 thin films exhibit P-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS2-based solar cells. The paper presents a study concerning the influence of deposition parameters (temperature of the substrate and concentration of Zn (1–5)% from 0.16 M ZnCl2) on the quality of CuInS2 thin films achieved by spray pyrolysis on glass substrate from solutions containing 0.02 M CuCl2.2H2O, 0.16 M thiourea and 0.08 M In2Cl3.5H2O.

  20. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  1. Optical properties of porous anodic alumina embedded Cu nanocomposite films

    Science.gov (United States)

    Liu, Huiyuan; Sun, Huiyuan; Liu, Lihu; Hou, Xue; Jia, Xiaoxuan

    2015-06-01

    Porous anodic alumina embedded Cu with iridescent colors were fabricated in copper sulfate electrolyte. The films display highly saturated colors after being synthesized by an ac electrodeposition method. Tunable color in the films is obtained by adjusting anodization time, and can be adjusted across the entire visible range. Theoretical results of the changes in the structural color according to the Bragg-Snell formula are consistent with the experimental results. The films could be used in many areas including decoration, display and multifunctional anti-counterfeiting applications.

  2. Electrodeposited Cu2ZnSnS4 thin films

    CSIR Research Space (South Africa)

    Valdes, M

    2014-05-01

    Full Text Available Electrochimica Acta Vol. 128, pp 393-399 Electrodeposited Cu2ZnSnS4thin films M. Valdesa, M. Modibedib, M. Matheb, T. Hilliec,d, M. Vazqueza,∗ aDivisión Electroquimica y Corrosión, INTEMA, UNMdP-CONICET, J. B. Justo 4302 B7608FDQ Mar del Plata, Argentina...

  3. Superconducting YBa 2Cu 3O 7- δ thin film grown on metallic film evaporated on MgO

    Science.gov (United States)

    Verdyan, A.; Azoulay, J.; Lapsker, I.

    2001-03-01

    At present it is commonly accepted that thin film formation of YBa 2Cu 3O 7- δ (YBCO) on conducting substrate is one of the keys to further development of advanced devices in the microelectronic and other applications. We have grown YBCO thin films by resistive evaporation technique on MgO coated with metallic layers (Ni or Ag). A simple inexpensive vacuum system equipped with resistively heated boats for metal and precursor mixture of yttrium, copper and barium fluoride powders was used. X-ray diffraction (XRD) and scanning electron microscopy techniques were used for texture, morphology and surface analyses respectively. Electrical and magnetical properties were determined by a standard dc four-probe method. The way of heating process is shown to be critical parameter in the film quality. The physical and electrical properties of the YBCO films are discussed in light of the fact that XRD measurements done on the metallic buffer layers have revealed a multicrystalline structure.

  4. Aerosol deposition of (Cu,Ti) substituted bismuth vanadate films

    Energy Technology Data Exchange (ETDEWEB)

    Exner, Jörg, E-mail: Functional.Materials@Uni-Bayreuth.de [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany); Fuierer, Paul [Materials and Metallurgical Engineering Department, New Mexico Institute of Mining and Technology, Socorro, NM 87801 (United States); Moos, Ralf [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany)

    2014-12-31

    Bismuth vanadate, Bi{sub 4}V{sub 2}O{sub 11}, and related compounds with various metal (Me) substitutions, Bi{sub 4}(Me{sub x}V{sub 1−x}){sub 2}O{sub 11−δ}, show some of the highest ionic conductivities among the known solid oxide electrolytes. Films of Cu and Ti substituted bismuth vanadate were prepared by an aerosol deposition method, a spray coating process also described as room temperature impact consolidation. Resultant films, several microns in thickness, were dense with good adhesion to the substrate. Scanning electron microscopy and high temperature X-ray diffraction were used to monitor the effects of temperature on the structure and microstructure of the film. The particle size remained nano-scale while microstrain decreased rapidly up to 500 °C, above which coarsening and texturing increased rapidly. Impedance measurements of films deposited on inter-digital electrodes revealed an annealing effect on the ionic conductivity, with the conductivity exceeding that of a screen printed film, and approaching that of bulk ceramic. - Highlights: • Cu and Ti doped bismuth vanadate films were prepared by aerosol deposition (AD). • Dense 3–5 μm thick films were deposited on alumina, silicon and gold electrodes. • Annealing of the AD-layer increases the conductivity by 1.5 orders of magnitude. • Effect of temperature on structure and microstructure was investigated.

  5. Composition and growth procedure-dependent properties of electrodeposited CuInSe 2 thin films

    Science.gov (United States)

    Babu, S. Moorthy; Ennaoui, A.; Lux-Steiner, M. Ch.

    2005-02-01

    CuInSe 2 thin films were deposited on molybdenum-coated glass substrates by electrodeposition. Deposition was carried out with a variety of electrochemical bath compositions. The quality of the deposits depends very much on the source materials as well as the concentration of the same in the electrolyte. The deposition potential was varied from -0.4 to -0.75 V vs. SCE. The pH of the solution was adjusted to 1.5-2 using diluted sulphuric acid. Chloride salts containing bath yield good surface morphology, but there is always excess of the metallic content in the deposited films. Different growth procedures, like initial metallic layers of copper or indium, layers of copper selenide or indium selenide before the actual deposition of ternary chalcopyrite layers were attempted. Fabrication pathway, morphological and compositional changes due to the different precursor route has been analysed. The quality of the deposits prepared by one-step electrodeposition is better than the deposits with a two-stage process. The deposited films were characterized with XRD, SEM-EDAX, UV-visible spectroscopy and I- V characteristics. The deposited films were annealed in air as well as in nitrogen atmosphere. The influence of annealing temperature, environment and annealing time on the properties of the films are evaluated. Attempts were made to fabricate solar cell structure from the deposited absorber films. The structure of Mo/CuInSe 2/CdS/ZnO/Ni was characterized with surface, optical and electrical studies.

  6. Engineering of electronic and optical properties of ZnO thin films via Cu doping

    Institute of Scientific and Technical Information of China (English)

    Zhang Guo-Heng; Deng Xiao-Yan; Xue Hua; Xiang Gang

    2013-01-01

    ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique.XRD analysis indicates that the crystal quality of the ZnO:Cu film can be enhanced by a moderate level of Cu-doping in the sputtering process.The results of XPS spectra of zinc,oxygen,and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen,but little effect on those of zinc and copper.Interestingly,further investigation of the optical properties of ZnO:Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping,in contrast to the simple monotonic behavior of the Burstein-Moss effect.Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample.Our result may suggest an effective way of tuning the bandgap of ZnO samples.

  7. Accelerated development of CuSbS2 thin film photovoltaic device prototypes

    Energy Technology Data Exchange (ETDEWEB)

    Welch, Adam W. [National Renewable Energy Laboratory, Golden CO 80401 USA; Colorado School of Mines, Golden CO USA; Baranowski, Lauryn L. [National Renewable Energy Laboratory, Golden CO 80401 USA; Colorado School of Mines, Golden CO USA; Zawadzki, Pawel [National Renewable Energy Laboratory, Golden CO 80401 USA; DeHart, Clay [National Renewable Energy Laboratory, Golden CO 80401 USA; Johnston, Steve [National Renewable Energy Laboratory, Golden CO 80401 USA; Lany, Stephan [National Renewable Energy Laboratory, Golden CO 80401 USA; Wolden, Colin A. [Colorado School of Mines, Golden CO USA; Zakutayev, Andriy [National Renewable Energy Laboratory, Golden CO 80401 USA

    2016-02-03

    Development of alternative thin film photovoltaic technologies is an important research topic because of the potential of low-cost, high-efficiency solar cells to produce terawatt levels of clean power. However, this development of unexplored yet promising absorbers can be hindered by complications that arise during solar cell fabrication. Here, a high-throughput combinatorial method is applied to accelerate development of photovoltaic devices, in this case, using the novel CuSbS2 absorber via a newly developed three-stage self-regulated growth process to control absorber purity and orientation. Photovoltaic performance of the absorber, using the typical substrate CuInxGa1 - xSe2 (CIGS) device architecture, is explored as a function of absorber quality and thickness using a variety of back contacts. This study yields CuSbS2 device prototypes with ~1% conversion efficiency, suggesting that the optimal CuSbS2 device fabrication parameters and contact selection criteria are quite different than for CIGS, despite the similarity of these two absorbers. The CuSbS2 device efficiency is at present limited by low short-circuit current because of bulk recombination related to defects, and a small open-circuit voltage because of a theoretically predicted cliff-type conduction band offset between CuSbS2 and CdS. Overall, these results illustrate both the potential and limits of combinatorial methods to accelerate the development of thin film photovoltaic devices using novel absorbers.

  8. Direct synthesis of RGO/Cu{sub 2}O composite films on Cu foil for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Xiangmao; Wang, Kun [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Zhao, Chongjun, E-mail: chongjunzhao@ecust.edu.cn [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia); Qian, Xiuzhen [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Chen, Shi [School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China); Li, Zhen, E-mail: zhenl@uow.edu.au [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia); Liu, Huakun; Dou, Shixue [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia)

    2014-02-15

    Graphical abstract: RGO/Cu{sub 2}O/Cu composites were synthesized by simple hydrothermal treatment of copper foils with graphene oxide, in which the reduction of graphene oxide and the formation of Cu{sub 2}O nanoparticles simultaneously happened in one-pot reaction. These composites can be directly used as electrodes of supercapacitors with the highest specific capacitance of 98.5 F/g at 1 A g{sup −1}, which is much better than that of CuO or Cu{sub 2}O electrodes. -- Highlights: • The RGO/Cu{sub 2}O/Cu composites were obtained by a friendly method in one step. • Improved capacitance performance is realized by the hydrothermal treatment of graphene oxides with Cu foils. • RGO/Cu{sub 2}O/Cu-200 composites exhibit the largest specific capacitance of 98.5 F g{sup −1} at 1 A g{sup −1}. -- Abstract: Reduced graphene oxide/cuprous oxide (RGO/Cu{sub 2}O) composite films were directly synthesized on the surface of copper foil substrates through a straight redox reaction between GO and Cu foil via a hydrothermal approach. Characterization of the resultant composites with X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and field emission scanning electron microscope (FESEM) confirms the formation of Cu{sub 2}O and reduction of GO, in which Cu{sub 2}O nanoparticles were well covered by RGO. The resultant composites (referred to as RGO/Cu{sub 2}O/Cu) were directly used as electrodes for supercapacitors, and their electrochemical performance was assessed by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectrometry (EIS) in 1 M KOH aqueous solution. A specific capacitance of 98.5 F g{sup −1} at 1 A g{sup −1} was obtained, which is much higher than that of pure Cu{sub 2}O prepared under the same conditions, due to the presence of RGO.

  9. Corrosion and ion release behavior of Cu/Ti film prepared via physical vapor deposition in vitro as potential biomaterials for cardiovascular devices

    Science.gov (United States)

    Liu, Hengquan; Zhang, Deyuan; Shen, Feng; Zhang, Gui; Song, Shenhua

    2012-07-01

    Cu/Ti films of various Cu/Ti ratios were prepared on a TiNi alloy via vacuum arc plasma deposition. The phase composition, structure, and concentration of elements were investigated via X-ray diffraction and X-photoelectron energy spectrum. The hemolysis ratio and platelet adhesion of the different films were characterized to evaluate blood compatibility. The corrosion and ion release behavior were investigated via a typical immersion test and electrochemical method. The growth of endothelial cells (ECs) was investigated, and methylthiazolyte-trazolium method was employed to evaluate the effect of Cu2+. The sophisticated films showed good compatibility. However, with increasing quality ratio of Cu/Ti, the hemolysis ratio increased, and some platelets started to break slightly. The Cu2+ release was gradually stabilized. The open circuit potential of the Cu/Ti film-modified samples was lower than that of the TiNi substrate. The polarization test result indicates that the passivation stability performance of Cu/Ti film samples is less than the TiNi substrate, and is favorable to Cu2+ release. The adhesion and proliferation of ECs would be inhibited with 10 wt.% Cu concentration of the film, and ECs would undergo apoptosis at >50 wt.% concentration. A Cu/Ti film with good compatibility and anti-endothelialization has potential applications for special cardiovascular devices.

  10. Corrosion and ion release behavior of Cu/Ti film prepared via physical vapor deposition in vitro as potential biomaterials for cardiovascular devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hengquan [Center of Research and Development, Lifetech Scientific (Shenzhen) Co., Ltd., Shenzhen 518057 (China); Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Zhang Deyuan, E-mail: zhangdeyuan@lifetechmed.com [Center of Research and Development, Lifetech Scientific (Shenzhen) Co., Ltd., Shenzhen 518057 (China); Shen Feng [Center of Research and Development, Lifetech Scientific (Shenzhen) Co., Ltd., Shenzhen 518057 (China); Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Zhang Gui [Center of Research and Development, Lifetech Scientific (Shenzhen) Co., Ltd., Shenzhen 518057 (China); Song Shenhua [Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China)

    2012-07-15

    Cu/Ti films of various Cu/Ti ratios were prepared on a TiNi alloy via vacuum arc plasma deposition. The phase composition, structure, and concentration of elements were investigated via X-ray diffraction and X-photoelectron energy spectrum. The hemolysis ratio and platelet adhesion of the different films were characterized to evaluate blood compatibility. The corrosion and ion release behavior were investigated via a typical immersion test and electrochemical method. The growth of endothelial cells (ECs) was investigated, and methylthiazolyte-trazolium method was employed to evaluate the effect of Cu{sup 2+}. The sophisticated films showed good compatibility. However, with increasing quality ratio of Cu/Ti, the hemolysis ratio increased, and some platelets started to break slightly. The Cu{sup 2+} release was gradually stabilized. The open circuit potential of the Cu/Ti film-modified samples was lower than that of the TiNi substrate. The polarization test result indicates that the passivation stability performance of Cu/Ti film samples is less than the TiNi substrate, and is favorable to Cu{sup 2+} release. The adhesion and proliferation of ECs would be inhibited with 10 wt.% Cu concentration of the film, and ECs would undergo apoptosis at >50 wt.% concentration. A Cu/Ti film with good compatibility and anti-endothelialization has potential applications for special cardiovascular devices.

  11. Cu Diffusion in Co/Cu/TiN Films for Cu Metallization

    Institute of Scientific and Technical Information of China (English)

    Xiuhua CHEN; Xinghui WU; Jinzhong XIANG; Zhenlai ZHOU; Heyun ZHAO; Liqiang CHEN

    2006-01-01

    Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations (ULSIs) was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.

  12. Grain growth in Al-2% Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, J.E. Jr. (Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)); Frear, D.R. (Sandia National Labs., Albuquerque, NM (United States)); Morris, J.W. Jr. (Lawrence Berkeley Lab., CA (United States))

    1991-06-01

    The grain size and grain growth kinetics in sputter deposited Al-2% Cu films on silicon substrates were determined by TEM for various film thicknesses and anneal times, temperatures and methods. Grain sizes were found to be typically lognormally distributed. The as- deposited grain size (d{sub o}) dependence on film thickness (TH) was found to be d{sub o} = C TH{sup {1/2}}, due to competitive grain growth during film formation. Annealed grain size (d) after Rapid Thermal Annealing (RTA) for time (t) at temperature (T) is described by the general equation d {minus} do = C TH{sup 0.7} {l brace}t exp ({minus}{Delta}E{sub a}/kT){r brace}{sup 1/8}, where {Delta}E{sub a} = 0.85 ev for 0.4 {mu}m films and {Delta}E{sub a} = 1.1 ev for 0.8 {mu}m films. Grain growth is largely saturated for these anneals. Grain growth is shown to be more extensive during RTA anneals than furnace annealing and more extensive in 0.4 {mu}m films than 0.8 {mu}m films for equivalent RTA cycles. The results are discussed in terms of models, simulations and previous results of grain growth in thin metal films. 21 refs., 4 figs.

  13. Solution-processed highly efficient Cu2ZnSnSe4 thin film solar cells by dissolution of elemental Cu, Zn, Sn, and Se powders.

    Science.gov (United States)

    Yang, Yanchun; Wang, Gang; Zhao, Wangen; Tian, Qingwen; Huang, Lijian; Pan, Daocheng

    2015-01-14

    Solution deposition approaches play an important role in reducing the manufacturing cost of Cu2ZnSnSe4 (CZTSe) thin film solar cells. Here, we present a novel precursor-based solution approach to fabricate highly efficient CZTSe solar cells. In this approach, low-cost elemental Cu, Zn, Sn, and Se powders were simultaneously dissolved in the solution of thioglycolic acid and ethanolamine, forming a homogeneous CZTSe precursor solution to deposit CZTSe nanocrystal thin films. Based on high-quality CZTSe absorber layer, pure selenide CZTSe solar cell with a photoelectric conversion efficiency of 8.02% has been achieved without antireflection coating.

  14. Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films

    Science.gov (United States)

    Maheswari, B.; Dhanam, M.

    2013-04-01

    CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.

  15. Glassy dynamics in CuMn thin-film multilayers

    Science.gov (United States)

    Zhai, Qiang; Harrison, David C.; Tennant, Daniel; Dalhberg, E. Dan; Kenning, Gregory G.; Orbach, Raymond L.

    2017-02-01

    Thin-film multilayered spin-glass CuMn/Cu structures display glassy dynamics. The freezing temperature Tf was measured for 40 layers of CuMn films of thickness L =4.5 ,9.0 , and 20.0 nm, sandwiched between nonmagnetic Cu layers of thickness ≈60 nm. The Kenning effect, Tf∝lnL , is shown to follow from power-law dynamics where the correlation length grows from nucleation as ξ (t ,T ) =c1a0(t/τ0) c2(T /Tg) , leading to [(Tf/Tg) c2ln(tco/τ0) ] +lnc1=ln(L /a0) . Here, Tg is the bulk spin-glass temperature, c1 and c2 are constants determined from the spin-glass dynamics, tco is the time for the correlation length to grow to the film thickness, τ0 is a characteristic exchange time ≈ℏ /kBTg , and a0 is the average Mn-Mn separation. For t ≥tco , the magnetization dynamics are simple activated, with a single activation energy Δmax(L ) /kBTg=(1 /c2) [ln(L /a0) -lnc1] that does not change with time. Values for all these parameters are found for the three values of L explored in these measurements. We find experimentally Δmax(L ) /kB =907 , 1246, and 1650 K, respectively, for the three CuMn thin-film multilayer thicknesses, consistent with power-law dynamics. We perform a similar analysis based on the activated dynamics of the droplet model and find a much larger spread for Δmax(L ) than found experimentally.

  16. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  17. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    Science.gov (United States)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  18. The effect of Cu doping concentration on resistive switching of HfO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Tingting; Tan, Tingting, E-mail: tantt@nwpu.edu.cn; Liu, Zhengtang

    2015-10-01

    Graphical abstract: - Highlights: • The Cu doped and undoped HfO{sub 2} films were fabricated. • The improved RS behaviors were observed for Cu doped HfO{sub 2} film with BRS. • The 9.7% doped HfO{sub 2}:Cu film showed both BRS and URS behaviors. • The related switching mechanisms were illustrated. - Abstract: The Cu-doped and undoped HfO{sub 2} films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO{sub 2} film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO{sub 2}:Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO{sub 2} film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO{sub 2} film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO{sub 2}:Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

  19. Substrate effects on SILAR route synthesized CuO thin films

    Science.gov (United States)

    Dhanasekaran, V.; Mahalingam, T.; Ravi, G.; Rhee, Jin-Koo

    2012-06-01

    Cupric oxide (CuO) thin films are deposited using SILAR method onto various substrates. The X-ray diffraction patterns revealed that the deposited films are polycrystalline in nature with monoclinic structure. The microstructural parameters of chemical bath deposited CuO thin films are calculated using the structural studies. The optical band gap value is determined using transmission spectrum of CuO thin films and the results are discussed.

  20. Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

    Science.gov (United States)

    Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol

    2016-12-01

    We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

  1. On twin density and resistivity of nanometric Cu thin films

    Science.gov (United States)

    Barmak, Katayun; Liu, Xuan; Darbal, Amith; Nuhfer, N. Thomas; Choi, Dooho; Sun, Tik; Warren, Andrew P.; Coffey, Kevin R.; Toney, Michael F.

    2016-08-01

    Crystal orientation mapping in the transmission electron microscope was used to quantify the twin boundary length fraction per unit area for five Ta38Si14N48/SiO2 encapsulated Cu films with thicknesses in the range of 26-111 nm. The length fraction was found to be higher for a given twin-excluded grain size for these films compared with previously investigated SiO2 and Ta/SiO2 encapsulated films. The quantification of the twin length fraction per unit area allowed the contribution of the twin boundaries to the size effect resistivity to be assessed. It is shown that the increased resistivity of the Ta38Si14N48 encapsulated Cu films compared with the SiO2 and Ta/SiO2 encapsulated films is not a result of increased surface scattering, but it is a result of the increase in the density of twin boundaries. With twin boundaries included in the determination of grain size as a mean-intercept length, the resistivity data are well described by 2-parameter Matthiessen's rule summation of the Fuchs-Sondheimer and Mayadas Shatzkes models, with p and R parameters that are within experimental error equal to those in prior reports and are p = 0.48(+0.33/-0.31) and R = 0.27 ± 0.03.

  2. Magnetization reversal of Fe ultrathin film on Cu (100)

    Institute of Scientific and Technical Information of China (English)

    He Wei; Zhan Qing-Feng; Wang De-Yong; Chen Li-Jun; Cheng Zhao-Hua

    2008-01-01

    The magnetization reversal of Fe/Cu(100) ultrathin films grown at room temperature is investigated by using an in situ magneto-optical Kerr effect polarimcter with a magnet that can rotate in a plane of incidence.There occur spin reorientation transitions from out-of-plane to in-plane magnetizations in 8 and 12 monolayers (ML) thick iron films.The coercive fields axe observed to be proportional to the reciprocal of the cosine with respect to the easy axis,suggesting that the domain-wall displacement plays a main role in the magnetization reversal process.

  3. Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films

    Science.gov (United States)

    Yu, Zhou; Yan, Chuanpeng; Yan, Yong; Zhang, Yanxia; Huang, Tao; Huang, Wen; Li, Shasha; Liu, Lian; Zhang, Yong; Zhao, Yong

    2012-09-01

    Cu(In,Ga)Se2 (CIGSe) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature, following vacuum annealing at different temperatures. We have investigated the effect of annealing temperature (150-550 °C) on the phase transformation process of the CIGSe films. The as-deposited precursor films show a near stoichiometry composition and amorphous structure. Composition loss of the films mainly occur in the annealing temperature range of 150-300 °C. Comparing with samples annealed at 300 °C, films annealed at 350 °C or higher temperatures exhibit almost similar composition and polycrystalline chalcopyrite structure. Crystal quality of the films improves with increasing annealing temperature. Reflectance spectra of the annealed films show interference fringe pattern. The calculated refractive indexes of the films are in the range of 2.4-2.5.

  4. Cu-doped CdS and its application in CdTe thin film solar cell

    Science.gov (United States)

    Deng, Yi; Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao; Wang, Deliang

    2016-01-01

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd- and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  5. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  6. Cu-doped CdS and its application in CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Yi [School of Automation, Wuhan University of Technology, Wuhan, Hubei 430070 (China); College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212 (China); Yang, Jun; Yang, Ruilong; Shen, Kai; Wang, Dezhao [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Deliang, E-mail: eedewang@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  7. Optical spectroscopy studies of Cu{sub 2}ZnSnSe{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yakushev, M.V., E-mail: michael.yakushev@strath.ac.uk [Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom); URFU and Ural Branch of RAS, 620002 Ekaterinburg (Russian Federation); Forbes, I. [Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom); Mudryi, A.V. [Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom); Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki 19, 220072 Minsk (Belarus); Grossberg, M.; Krustok, J.; Beattie, N.S. [Tallinn University Technology, Ehitajate tee 5, Tallinn 19086 (Estonia); Moynihan, M. [Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom); Rockett, A. [University of Illinois, Urbana, IL 61801 (United States); Martin, R.W. [Department of Physics, SUPA, Strathclyde University, G4 0NG Glasgow (United Kingdom)

    2015-05-01

    Cu{sub 2}ZnSnSe{sub 4} thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor-acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis. - Highlights: • We determine the band gap of Cu{sub 2}ZnSnSe{sub 4} thin films using 4 K absorption spectra. • We compare photoluminescence (PL) spectra of different structural quality films. • We analyse temperature and excitation intensity dependencies of the PL spectra. • We clarify the nature of defects. • We propose a model of radiative recombination.

  8. Delafossite-CuAlO{sub 2} films prepared by annealing of amorphous Cu-Al-O films at high temperature under controlled atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hong-Ying, E-mail: hychen@cc.kuas.edu.tw; Tsai, Ming-Wei

    2011-07-01

    In this study, amorphous Cu-Al-O films were deposited onto a (100) p-type silicon substrate by a magnetron sputtering system. The films were then annealed at 700 deg. C and 800 deg. C for 2 h in N{sub 2}, air and O{sub 2}. X-ray diffraction patterns showed that the as-deposited films were amorphous. When the films were annealed at 700 deg. C, the monoclinic-CuO and spinel-CuAl{sub 2}O{sub 4} phases were detected in all atmospheres. As the annealing temperature increased to 800 deg. C, delafossite-CuAlO{sub 2} (R3-bar m and P6{sub 3}/mmc phases) appeared in N{sub 2} whereas monoclinic-CuO and spinel-CuAl{sub 2}O{sub 4} phases were detected in air and O{sub 2}. Thermodynamic calculations can explain the formation of delafossite-CuAlO{sub 2} films. The optical bandgap and conductivity of delafossite-CuAlO{sub 2} films were 3.30 eV and 6.8 x 10{sup -3} S/cm, respectively, which are compatible with other data in the literature. The p-type characteristic in delafossite-CuAlO{sub 2} films was verified by a hot-probe method.

  9. Multiphonon hopping of carriers in CuO thin films

    Science.gov (United States)

    Serin, T.; Yildiz, A.; Şahin, Ş. H.; Serin, N.

    2011-10-01

    We have performed a detailed study of the electrical conduction process in CuO thin films deposited by the sol-gel dip coating technique in a temperature range 280-420 K. The electrical conduction is analyzed within the framework of various hopping conduction models. Multiphonon hopping conduction mechanism is found to dominate the electrical transport in the entire temperature region. Our results are consistent with this model of hopping conduction mechanisms with weak carrier-lattice coupling.

  10. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...

  11. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-02-28

    Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  12. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Science.gov (United States)

    Fang, J. S.; Sun, S. L.; Cheng, Y. L.; Chen, G. S.; Chin, T. S.

    2016-02-01

    The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO4. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  13. Comparison of Microstructural and Morphological Properties of Electrodeposited Fe-Cu Thin Films with Low and High Fe : Cu Ratio

    Directory of Open Access Journals (Sweden)

    Umut Sarac

    2013-01-01

    Full Text Available Fe-Cu films with low and high Fe : Cu ratio have been produced from the electrolytes with different Fe ion concentrations at a constant deposition potential of −1400 mV versus saturated calomel electrode (SCE by electrodeposition technique onto indium tin oxide (ITO coated conducting glass substrates. It was observed that the variation of Fe ion concentration in the electrolyte had a very strong influence on the compositional, surface morphological, and microstructural properties of the Fe-Cu films. An increase in the Fe ion concentration within the plating bath increased the Fe content, consequently Fe : Cu ratio within the films. The crystallographic structure analysis showed that the Fe-Cu films had a mixture of face-centered cubic (fcc Cu and body centered cubic (bcc α-Fe phases. The average crystallite size decreased with the Fe ion concentration. The film electrodeposited from the electrolyte with low Fe ion concentration exhibited a morphology consisting of dendritic structures. However, the film morphology changed from dendritic structure to cauliflower-like structure at high Fe ion concentration. The surface roughness and grain size were found to decrease significantly with increasing Fe ion concentration in the electrolyte. The significant differences observed in the microstructural and morphological properties caused by the change of Fe ion concentration in the electrolyte were ascribed to the change of Fe : Cu ratio within the films.

  14. YBCO thin film formation near the stability line by resistive evaporation of BaF{sub 2}, Cu, and Y

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Center for Technological Education Holon (Israel)

    1996-02-01

    A single resistivity heated source was used to deposit a mixture of BaF{sub 2}, Cu, and Y to form precursor films onto MgO substrates held at room temperature. Different heat treatment conditions were applied to study the stability diagram of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}. It was found that the stability line is shifted toward the higher oxygen partial pressure and lower temperature side of the pure YBCO line in the presence of fluorine and fluorides in the precursor. Films of good quality were obtained when the annealing conditions were in close proximity to this line.

  15. Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Solís-Canto, O.; Ornelas-Gutiérrez, C.; Pérez-García, S.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2014-12-05

    Highlights: • High quality bilayered Zn–Cu oxide thin films were deposited by aerosol assisted CVD. • Detailed microstructural characterization was performed by XRD and electron microscopy. • Absorbance of bilayered films shows a shift of absorption edge toward visible region. • Optical band gap or nearly 3.2 and 2 eV was determined for ZnO and Cu oxide. • High photocatalytic activity around 90% was obtained for bilayered samples. - Abstract: In this work, it is presented the synthesis, microstructural characterization and photocatalytic properties of bilayered CuO–ZnO/ZnO thin films onto borosilicate glass and fused silica substrates. The films were deposited by aerosol assisted chemical vapor deposition, using an experimental setup reported elsewhere. Deposition conditions were optimized to get high quality films; i.e. they were structurally uniform, highly transparent, non-light scattering, homogeneous, and well adhered to the substrate. Different Cu/Zn atomic ratios were tried for the upper layer. The microstructure of the films was characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy. GIXRD results indicate the presence of ZnO Wurzite and Cu oxide phases. Results of SEM and HRTEM analysis of the cross sectional microstructure showed that the films were composed of compact and dense layers with no visible evidence of an interfacial boundary or porosity. Optical absorbance of the bilayered films showed a clear shift of the absorption toward the visible range. Optical band gap was determined roughly at 3.2 and 2 eV for ZnO and Cu oxide, respectively. Photocatalytic activity of the samples, for the degradation of a 10{sup −5} mol dm{sup −3} solution of methylene blue (MB), was determined after 120 and 240 min of irradiation with an UV-A source. Around 90% of MB degradation was reached by bilayered films with

  16. Effect of tellurium deposition rate on the properties of Cu-In-Te based thin films and solar cells

    Science.gov (United States)

    Mise, Takahiro; Nakada, Tokio

    2011-01-01

    To investigate the effects of tellurium (Te) deposition rate on the properties of Cu-In-Te based thin films (Cu/In=0.30-0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn 3Te 5 phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn 3Te 5 thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm 2) efficiency of 4.4% ( Voc=309 mV, Jsc=28.0 mA/cm 2, and FF=0.509) without light soaking.

  17. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

    Science.gov (United States)

    Tanaka, Tooru; Nagatomo, Takeshi; Kawasaki, Daisuke; Nishio, Mitsuhiro; Guo, Qixin; Wakahara, Akihiro; Yoshida, Akira; Ogawa, Hiroshi

    2005-11-01

    In order to fabricate Cu2ZnSnS4 thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu2ZnSnS4 films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu2ZnSnS4 films with stoichiometric composition are obtained at the substrate temperature up to 400 °C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 °C. The Cu2ZnSnS4 film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu2ZnSnS4 film prepared in this experiment are suitable for fabricating a thin film solar cell.

  18. Structural and optical modeling of electro deposited CuInSe2 thin films

    Directory of Open Access Journals (Sweden)

    Bessaïs B.

    2012-06-01

    Full Text Available The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of thin film solar cells. In this study, CuInSe2 thin films were prepared at room temperature using the electrodepositing method. The as-prepared films were found to be amorphous. The CuInSe2 films were crystallized in a tubular resistive furnace, and characterized by means of the the X-ray diffraction (XRD and UV-VIS-NIR spectroscopy techniques. The parameters to optimize are the temperature and duration of the annealing time, and the Cu/In ratio in the precursors.

  19. Epitaxial growth of pentacene films on Cu110.

    Science.gov (United States)

    Söhnchen, S; Lukas, S; Witte, G

    2004-07-01

    The molecular structure of thin pentacene (C(22)H(14)) films grown on a Cu(110) surface has been studied by means of He atom scattering, low energy electron diffraction, thermal desorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. Depending on the actual film thickness three different crystalline phases have been identified which reveal a characteristic reorientation of the molecular plane relative to the substrate surface. In the monolayer regime the molecules form a highly ordered commensurate (6.5x2) structure with a planar adsorption geometry. For thin multilayers (thickness <2 nm) a second phase is observed which is characterized by a lateral ((-0.65 5.69) ( 1.90 1.37)) structure and a tilting of the molecular plane of about 28 degrees around their long axis which remains parallel to the surface. Finally, when exceeding a thickness of about 2 nm subsequent growth proceeds with an upright molecular orientation and leads to the formation of crystalline films which are epitaxially oriented with respect to the substrate. The present study thus demonstrates that also on metal substrates highly ordered pentacene films with an upright orientation of the molecular planes can be grown. Photoelectron spectroscopy data indicate further that thick films do not grow in a layer-by-layer mode but reveal a significant degree of roughness. (c) 2004 American Institute of Physics.

  20. Grain coarsening mechanism of Cu thin films by rapid annealing

    Energy Technology Data Exchange (ETDEWEB)

    Sasajima, Yasushi, E-mail: sasajima@mx.ibaraki.ac.jp; Kageyama, Junpei; Khoo, Khyoupin; Onuki, Jin

    2010-09-30

    Cu thin films have been produced by an electroplating method using nominal 9N anode and nominal 6N CuSO{sub 4}.5H{sub 2}O electrolyte. Film samples were heat-treated by two procedures: conventional isothermal annealing in hydrogen atmosphere (abbreviated as H{sub 2} annealing) and rapid thermal annealing with an infrared lamp (abbreviated as RTA). After heat treatment, the average grain diameters and the grain orientation distributions were examined by electron backscattering pattern analysis. The RTA samples (400 {sup o}C for 5 min) have a larger average grain diameter, more uniform grain distribution and higher ratio of (111) orientation than H{sub 2} annealed samples (400 {sup o}C for 30 min). This means that RTA can produce films with coarser and more uniformly distributed grains than H{sub 2} annealing within a short time, i.e. only a few minutes. To clarify the grain coarsening mechanism, grain growth by RTA was simulated using the phase field method. The simulated grain diameter reaches its maximum at a heating rate which is the same order as that in the actual RTA experiment. The maximum grain diameter is larger than that obtained by H{sub 2} annealing with the same annealing time at the isothermal stage as in RTA. The distribution of the misorientation was analyzed which led to a proposed grain growth model for the RTA method.

  1. Low temperature interdiffusion in Cu/Ni thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lefakis, H.; Cain, J.F. (IBM General Technology Division, Endicott, NY (USA)); Ho, P.S. (IBM Watson Research Center, Yorktown Heights, NY (USA))

    1983-03-18

    Interdiffusion in Cu/Ni thin films was studied by means of Auger electron spectroscopy in conjunction with Ar/sup +/ ion sputter profiling. The experimental conditions used aimed at simulating those of typical chip-packaging fabrication processes. The Cu/Ni couple (from 10 ..mu..m to 60 nm thick) was produced by sequential vapor deposition on fused-silica substrates at 360, 280 and 25/sup 0/C in 10/sup -6/ Torr vacuum. Diffusion anneals were performed between 280 and 405/sup 0/C for times up to 20 min. Such conditions define grain boundary diffusion in the regimes of B- and C-type kinetics. The data were analyzed according to the Whipple-Suzuoka model. Some deviations from the assumptions of this model, as occurred in the present study, are discussed but cannot fully account for the typical data scatter. The grain boundary diffusion coefficients were determined allowing calculation of respective permeation distances.

  2. Film Deposition, Cryogenic RF Testing and Materials Analysis of a Nb/Cu Single Cell SRF Cavity

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xin [JLAB; Geng, Rongli [JLAB; Palczerski, Ari [JLAB; Li, Yongming [Peking

    2013-09-01

    In this study, we present preliminary results on using a cathodic-arc-discharge Nb plasma ion source to establish a Nb film-coated single-cell Cu cavity for SRF research. The polycrystalline Cu cavity was fabricated and mirror-surface-finished by a centrifugal barrel polishing (CBP) process at Jefferson Lab. Special pre-coating processes were conducted, in order to create a template-layer for follow-on Nb grain thickening. A sequence of cryogenic RF testing demonstrated that the Nb film does show superconductivity. But the quality factor of this Nb/Cu cavity is low as a result of high residual surface resistance. We are conducting a thorough materials characterization to explore if some microstructural defects or hydrogen impurities, led to such a low quality factor.

  3. Electro/electroless deposition and characterization of CuIn precursors for CIS (CuInSe 2) films

    Science.gov (United States)

    Calixto, Estela; Sebastian, P. J.; Fernandez, Arturo

    1996-11-01

    CuIn (CI) precursors for growing CuInSe 2 (CIS) thin films were deposited and characterized. CI precursors were formed by using electrodeposition and electroless methods. In electrodeposition, CI precursors were formed by sequential deposition of {Cu}/{In} and {In}/{Cu}. In electroless deposition, the CI precursor was formed by co-deposition. The CI precursors were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). Initial results on the selenization of the precursors indicated that CuIn (electroless), {Cu}/{In} and {In}/{Cu} configurations are suitable for forming device quality CIS films. The major phases in the precursors were found to be Cu 11In 9 and elemental In, which may lead to the formation of the In-rich CIS phase (CuIn 2Se 3.5, JCPDS 35-1349) during sintering in argon at lower temperatures. It was found that the stoichiometric CIS phase (CuInSe 2, JCPDS 40-1487) is formed by selenization of the precursors at temperatures higher than 500°C.

  4. Effects of Thermochemical Treatment on CuSbS 2 Photovoltaic Absorber Quality and Solar Cell Reproducibility

    Energy Technology Data Exchange (ETDEWEB)

    de Souza Lucas, Francisco Willian; Welch, Adam W.; Baranowski, Lauryn L.; Dippo, Patricia C.; Hempel, Hannes; Unold, Thomas; Eichberger, Rainer; Blank, Beatrix; Rau, Uwe; Mascaro, Lucia H.; Zakutayev, Andriy

    2016-08-25

    CuSbS2 is a promising nontoxic and earth-abundant photovoltaic absorber that is chemically simpler than the widely studied Cu2ZnSnS4. However, CuSbS2 photovoltaic (PV) devices currently have relatively low efficiency and poor reproducibility, often due to suboptimal material quality and insufficient optoelectronic properties. To address these issues, here we develop a thermochemical treatment (TT) for CuSbS2 thin films, which consists of annealing in Sb2S3 vapor followed by a selective KOH surface chemical etch. The annealed CuSbS2 films show improved structural quality and optoelectronic properties, such as stronger band-edge photoluminescence and longer photoexcited carrier lifetime. These improvements also lead to more reproducible CuSbS2 PV devices, with performance currently limited by a large cliff-type interface band offset with CdS contact. Overall, these results point to the potential avenues to further increase the performance of CuSbS2 thin film solar cell, and the findings can be transferred to other thin film photovoltaic technologies.

  5. The Effects of Sputtering Target Preparation and Deposition Temperature on ZnTe:Cu Film Properties

    Energy Technology Data Exchange (ETDEWEB)

    Faulkner, Brooke R.; Ohno, T. R.; Burst, James M.; Duenow, Joel N.; Perkins, Craig L.; To, Bobby; Gessert, Timothy A.

    2015-06-14

    A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target 'recipes' with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.

  6. Microstructural and Optical Absorption Properties of Cu-MgF2 Nanoparticle Cermet Film

    Institute of Scientific and Technical Information of China (English)

    孙兆奇; 孙大明; 阮图南

    2002-01-01

    We examine the microstructural and optical absorption spectra of 10-30 vol% Cu-MgF2 nanoparticle cermet films prepared by co-evaporation in vacuum. The results show that the Cu-MgF2 cermet films are mainly composed of the amorphous MgF2 matrix with embedded fcc Cu nanoparticles of average size 12-24 nm. The results also show that the optical absorption of the films decreases as the wavelength increases in the range of 200-800nm. The surface plasmon resonance absorption peaks of Cu nanoparticles in 10, 20 and 30 vo1% Cu-MgF2 films appear at 578, 588 and 606nm, respectively. The interband transition absorption of Cu starts from 590nm downwards.Based on the Maxwell-Garnett theory, the experimental optical absorption properties of the films have been quantitatively evaluated.

  7. Structure and Electrical Properties of NdBa2Cu3Oy Thin Films by Laser Ablation at Low Oxygen Partial Pressure

    DEFF Research Database (Denmark)

    Mozhaev, Peter B.; Mozhaeva, Julia; Khoryushin, Alexey

    2017-01-01

    A deposition process for NdBa2Cu3Oy thin films by laser ablation at decreased deposition temperature was developed using substitution of oxygen with argon in the chamber during deposition. A low deposition rate is the crucial factor to obtain high-quality NBCO films. The Nd/Ba cation disorder...

  8. Post-irradiation effect of Deuterium ion beam onto Rh/W/Cu multilayer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A.T.T. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Rao, C.V.S.; Vala, Sudhirsinh; Basu, T.K.; Raole, Prakash M.; Makwana, Rajinikant [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2014-03-15

    Graphical abstract: AFM images of M{sub 1} and M{sub 2} Rh/W/Cu multilayer samples are in Fig. (a and b) before D ion beam irradiation and that of after 20 keV and 30 keV D ion beam irradiation are in Fig. (c and d), respectively. The columnar structures observed in the AFM images before and after irradiation were intact. The RMS roughness of the films increased by ∼4 nm due to 20 keV and ∼3 nm due to 30 keV D ion beam irradiation. Display Omitted -- Abstract: The fabrication of mirror like multilayer Rh/W/Cu thin films via Pulsed Laser Deposition technique is reported in this paper. These multilayer thin film mirrors were irradiated to 10, 20 and 30 keV energy of Deuterium ion beam. The post-irradiation effects onto the quality of these thin films were investigated by subjecting them to X-ray Diffractometer, Scanning Electron Microscope, Atomic Force Microscope, Ultraviolet (UV)–Visible and Far Infrared (FIR) spectrometer.

  9. Evidence and analysis of parallel growth mechanisms in Cu{sub 2}O films prepared by Cu anodization

    Energy Technology Data Exchange (ETDEWEB)

    Caballero-Briones, F., E-mail: fcaballerobriones@ub.ed [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Maria de Luna 11, 50018 Zaragoza (Spain); Palacios-Padros, A. [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Calzadilla, O. [Facultad de Fisica, Universidad de La Habana, San Lazaro y L, Colina Universitaria, 10400 Vedado, La Habana (Cuba); Sanz, Fausto, E-mail: fsanz@ub.ed [Institute for Bioengineering of Catalonia (IBEC), Edifici Helix, Baldiri i Reixac 15-21, 08028 Barcelona (Spain); Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Maria de Luna 11, 50018 Zaragoza (Spain)

    2010-05-30

    We have studied the preparation of Cu{sub 2}O films by copper anodization in a 0.1 M NaOH electrolyte. We identified the potential range at which Cu{sup +} dissolution takes place then we prepared films with different times of exposure to this potential. The morphology, crystalline structure, band gap, Urbach energy and thickness of the films were studied. Films prepared with the electrode unexposed to the dissolution potential have a pyramidal growth typical of potential driven processes, while samples prepared at increasing exposure times to dissolution potential present continuous nucleation, growth and grain coalescence. We observed a discrepancy in the respective film thicknesses calculated by coulometry, atomic force microscopy and optical reflectance. We propose that anodic Cu{sub 2}O film formation involves three parallel mechanisms (i) Cu{sub 2}O nucleation at the surface, (ii) Cu{sup +} dissolution followed by heterogeneous nucleation and (iii) Cu{sup +} and OH{sup -} diffusion through the forming oxide and subsequent reaction in the solid state.

  10. Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

    Science.gov (United States)

    Sultana, Jenifar; Paul, Somdatta; Karmakar, Anupam; Yi, Ren; Dalapati, Goutam Kumar; Chattopadhyay, Sanatan

    2017-10-01

    Thin film of p-type cupric oxide (p-CuO) is grown on silicon (n-Si) substrate by using chemical bath deposition (CBD) technique and a precise control of thickness from 60 nm to 178 nm has been achieved. The structural properties and stoichiometric composition of the grown films are observed to depend significantly on the growth time. The chemical composition, optical properties, and structural quality are investigated in detail by employing XRD, ellipsometric measurements and SEM images. Also, the elemental composition and the oxidation states of Cu and O in the grown samples have been studied in detail by XPS measurements. Thin film of 110 nm thicknesses exhibited the best performance in terms of crystal quality, refractive index, dielectric constant, band-gap, and optical properties. The study suggests synthesis route for developing high quality CuO thin film using CBD method for electronic and optical applications.

  11. The growth of nanostructured Cu{sub 2}ZnSnS{sub 4} films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Che Sulaiman, Nurul Suhada; Nee, Chen Hon [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Lee, Yen Sian [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Nanostructured CZTS films were grown at room temperature by using 355 nm laser. • CZTS films with E{sub g} of 1.9 eV have been obtained at 2 J cm{sup −2} at room temperature. • At high fluence, Cu/Sn rich droplets affected the overall quality of the films. • Improved crystallinity and E{sub g} of 1.5 eV was obtained at substrate temperature as low as 100 °C. - Abstract: In this work, we investigated on the growth of Cu{sub 2}ZnSnS{sub 4} films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu{sub 2}ZnSnS{sub 4} target. Depositions were performed at laser fluence from 0.5 to 4 J cm{sup −2}. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm{sup −2} by 355 nm laser where the absorption coefficient is >10{sup 4} cm{sup −1}, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

  12. Growth and characterization of single phase Cu2O by thermal oxidation of thin copper films

    Science.gov (United States)

    Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis

    2016-04-01

    We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can be achieved for oxidation temperatures between 250°C to 320°C. Cu2O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.

  13. Single step deposition method for nearly stoichiometric CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.u [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hill, Arthur E.; Pilkington, Richard D.; Cowpe, John S. [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hisek, Joerg [Technische Universitaet Braunschweig, Hannover (Germany); Bagnall, Darren M. [School of Electronics and Computer Science, University of Southampton, SO17 1BJ (United Kingdom)

    2011-03-01

    This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe{sub 2}. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.

  14. Preparation of highly oriented Al:ZnO and Cu/Al:ZnO thin films by sol-gel method and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R. [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan); Ravi, G., E-mail: gravicrc@gmail.com [School of Physics, Alagappa University, Karaikudi 630 004, Tamil Nadu (India)

    2015-11-15

    Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers. - Highlights: • High quality of Al:ZnO and Cu co-doped Al:ZnO thin films were fabricated by sol–gel method. • The XRD analyses revealed that the deposited thin films have hexagonal wurtzite structure. • XPS was carried out for Zn{sub 0.80}Al{sub 0.10}Cu{sub 0.10}O films to analyze the binding energy of Al, Cu, Zn and O. • SEM studies were made for Al:ZnO and Cu/Al:ZnO thin films. • RTFM was observed in Cu co-doped Al:ZnO thin films.

  15. Structural and optical properties of Cu{sub 2}O crystalline electrodeposited films

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Iuri S.; Martins, Cesar A.; Zoldan, Vinicius C.; Viegas, Alexandre D.C. [Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis-SC 88040-900 (Brazil); Dias da Silva, José H. [Laboratório de Filmes Semicondutores, Faculdade de Ciências, Universidade Estadual Paulista, Bauru-SP 17033-360 (Brazil); Pasa, André A., E-mail: andre.pasa@ufsc.br [Laboratório de Filmes Finos e Superfícies, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis-SC 88040-900 (Brazil)

    2014-07-01

    Cuprous oxide (Cu{sub 2}O) films were electrodeposited on Ni/Si(100), Au/Si(100), and Si(100) substrates from aqueous solution at room temperature. The thicknesses of the films were varied in the range of 250 to 1250 nm. It was shown that at pH 10.00, an increase of just 1% can change the Cu{sub 2}O texture from [100] to [111]. Atomic force microscopy reveals that Cu{sub 2}O(100) and Cu{sub 2}O(111) films present rounded and faceted grains, respectively. For the thinner films, it was also observed that the substrate has a strong influence on the Cu{sub 2}O orientation. The Cu{sub 2}O refraction index (n) and band gap energy (E{sub g}) were obtained from reflectance measurements. The Wemple and DiDomenico single oscillator model was applied to n data, and the dispersion energy E{sub d} of this model was addressed to describe the density of Cu vacancies in the Cu{sub 2}O lattice. It was found out that the density of this kind of defect is higher for [111] oriented Cu{sub 2}O films and decreases as a function of the film thickness. This analysis also indicated that the dynamics of formation of the Cu vacancy depends on the Cu{sub 2}O lattice parameter. This parameter showed that Cu{sub 2}O films are initially under compressive misfit stress, but at a critical thickness, the lattice parameter abruptly increases in order to relax the Cu{sub 2}O lattice structure. This sudden transition is also observed in the E{sub g} data and is attributed to the enhancement of Cu–Cu internetwork interaction that is inversely proportional to E{sub g}. - Highlights: • Cu{sub 2}O films were electrodeposited on Au/Si(100), Ni/Si(100), and Si(100) substrates. • Growth orientation can be selected by small changes of 1% on electrolyte pH. • Cu–Cu internetwork strengthening reduces Cu{sub 2}O band gap energy. • We report that Wemple–DiDomenico model can describe density of Cu vacancies (V{sub Cu}). • Density of V{sub Cu} in Cu{sub 2}O lattice depends strongly on deposition

  16. Studies on structural, optical and magnetic properties of Mg- and Li-doped Cu:ZnO films

    Science.gov (United States)

    Vachhani, P. S.; Rawal, Amit H.; Bhatnagar, A. K.; Choudhary, R. J.; Phase, D. M.; Rajput, Parasmani; Jha, S. N.; Bhattacharyya, D.

    2017-07-01

    Structural, optical and magnetic properties of Zn0.96Li0.02Cu0.02O and Zn0.98-x Mg x Cu0.02O (x  =  0.00, 0.02, 0.08) films grown by pulsed laser deposition (PLD) on a glass substrate coated with indium tin oxide (ITO) are presented in this paper. X-ray diffraction (XRD) measurements confirmed good structural quality without any impurity. No E 2(high) mode is observed in Raman spectra, possibly due to the breaking of translational symmetry caused by the intrinsic defects or by the dopant. Optical measurements show an increase in the bandgap of Mg- and Li-doped Cu:ZnO films with respect to that of Cu:ZnO film. Extended x-ray absorption fine structure spectroscopy (EXAFS) measurements at the Zn K-edge show some change in the coordination number, but no significant change was observed in the bond distances of the first and the second shells. The mean square relative displacement σ 2 increases with doping, indicating higher disorder in films caused by Mg and Li doping. No evidence of ferromagnetism is found in these films at 300 K.

  17. Heteroepitaxy of Cerium Oxide Thin Films on Cu(111

    Directory of Open Access Journals (Sweden)

    Josef Mysliveček

    2015-09-01

    Full Text Available An important part of fundamental research in catalysis is based on theoretical and modeling foundations which are closely connected with studies of single-crystalline catalyst surfaces. These so-called model catalysts are often prepared in the form of epitaxial thin films, and characterized using advanced material characterization techniques. This concept provides the fundamental understanding and the knowledge base needed to tailor the design of new heterogeneous catalysts with improved catalytic properties. The present contribution is devoted to development of a model catalyst system of CeO2 (ceria on the Cu(111 substrate. We propose ways to experimentally characterize and control important parameters of the model catalyst—the coverage of the ceria layer, the influence of the Cu substrate, and the density of surface defects on ceria, particularly the density of step edges and the density and the ordering of the oxygen vacancies. The large spectrum of controlled parameters makes ceria on Cu(111 an interesting alternative to a more common model system ceria on Ru(0001 that has served numerous catalysis studies, mainly as a support for metal clusters.

  18. A comparative study of different M(M = Al, Ag, Cu)/FTO bilayer composite films irradiated with nanosecond pulsed laser

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Li-jing, E-mail: lij_huang@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei, E-mail: rnf_ujs@126.com [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Bao-jia [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-12-25

    Highlights: • Different metal (i.e. Al, Ag and Cu) layers were sputtered on commercial FTO glass. • All the metal/FTO films were annealed by nanosecond pulsed laser irradiation. • Grating structures were also formed on the laser-irradiated Ag/FTO and Cu/FTO films. • The laser-irradiated Ag/FTO composite film had the better figure of merit. • Inducing gratings and annealing in one step is effective to improve film quality. - Abstract: Aluminium (Al), silver (Ag) and copper (Cu) layers were deposited on commercial fluorine-doped tin oxide (FTO) glass by direct current (DC) magnetron sputtering, so as to form Al/FTO, Ag/FTO and Cu/FTO bilayer films. Then all the as-deposited metal/FTO films were irradiated using a 532 nm nanosecond pulsed laser with a fluences of 1.05 J/cm{sup 2}. X-ray diffraction (XRD) analysis confirmed that all the laser-irradiated films were annealed by the laser and showed increased average crystallite size in FTO layers. Laser-induced grating structures were also obtained on the surfaces of the laser-irradiated Ag/FTO and Cu/FTO films, resulting in higher surface roughnesses and average transmittances of the films. But due to the broken continuity of the Ag and Cu layers, the sheet resistances of these two films slightly decreased as compared to that of the laser-irradiated Al/FTO film. It was also found that the laser-irradiated Ag/FTO film, whose average transmittance in 400–800 nm waveband and sheet resistance was 81.5% and 6.6 Ω/sq respectively, had the better figure of merit, indicating that the photoelectric property of FTO-based bilayer films could be further optimized through achieving fabrication of laser-induced grating structures and laser annealing in one step.

  19. Size effect on solid solid reaction growth between Cu film and Se particles

    Science.gov (United States)

    Kaito, Chihiro; Nonaka, Akira; Kimura, Seiji; Suzuki, Nobuhiko; Saito, Yoshio

    1998-03-01

    A recently developed experimental method of producing a compound by making use of the reaction between thin film and ultrafine particles has been used for copper selenide crystal formation to elucidate the particle size effect on the reaction process. In the case of reaction between Cu film Se particles with size of μm order, CuSe crystals were grown on Se particles by the diffusion of predominantly Cu atoms. In the case of Se particles of the order of 100 nm, amorphous Se particles changed into copper selenide particles by the mutual diffusion of Cu and Se atoms. If the size of Se particles was less than 20 nm, a part of the Cu film changed to copper selenide crystal due to the diffusion of Se atoms to the Cu film. Morphological differences have also been shown and discussed to be the result of the particle size effect.

  20. Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing

    Science.gov (United States)

    Lin, Qijing; Yang, Shuming; Jing, Weixuan; Li, Changsheng; Wang, Chenying; Jiang, Zhuangde; Jiang, Kely

    2014-09-01

    In this paper, the formation of buckling and delamination of sandwiched stacking of Ti/Cu/Si thin film are investigated. The crystallization structures, the composition of the Cu/Ti thin films, and the surface morphology are measured during annealing. The results show that the solid-phase reaction between Cu and Ti occurs at the interface. Buckling is initiated in the thin film annealed at 600°C. The volume expansion promotes the buckling and further produces microcracks. With increasing volume expansion, there are cavities formed in the middle layer when the annealing temperature is up to 700°C. Finally, thin film is delaminated from the substrate.

  1. Synthesis and nanoindentation behaviors of binary CuTi nanoglass films

    Science.gov (United States)

    Hu, Qingzhuo; Wu, Jili; Zhang, Bo

    2017-09-01

    In this paper, we prepared the binary Cu-Ti nanoglass films by composite deposition technique. The X-ray diffraction and atomic force microscopy indicate that as-synthesized films are consisted of nanoglass with apparent interfaces. The room temperature creep behavior and strain rate sensitivity of as-synthesized nanoglass films were investigated with nanoindetation and explored that Cu58Ti42 has a better creep-resistance property at room temperature but Cu42Ti58 has a more relaxed structure. The as-synthesized nanoglass films exhibit anomalously negative strain rate sensitivity.

  2. In Situ Scanning-Tunneling-Microscope Observation on Dissolution of a Cu-20Zr Film

    Institute of Scientific and Technical Information of China (English)

    Haibo LU; Guoze MENG; Ying LI; Fuhui WANG

    2005-01-01

    A nanocrystalline coating of Cu-20Zr (in wt pct) was obtained on glass by magnetron sputtering. The corrosion behavior of the Cu-20Zr film in 0.001 mol/L HCl solution was investigated using potentiodynamic polarization and in situ electrochemical scanning-tunneling-microscopy (ECSTM). Results demonstrated that the film exhibits active behavior. Microscopic pitting corrosion and tunneling are caused by localized electrodissolution of Zr atoms and the diffusion of Cu atoms at surface defects.

  3. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  4. Sputter deposition of Cu{sub 2}O thin films, nitrogen-doping and formation of Cu{sub 2}O-ZnO p/n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Graubner, Swen; Kronenberger, Achim; Benz, Julian; Reppin, Daniel; Fischer, Martin; Polity, Angelika; Hofmann, Detlef; Henning, Torsten; Klar, Peter; Meyer, Bruno K. [I. Physikalisches Institut, JLU Giessen (Germany)

    2010-07-01

    Cu{sub 2}O is one of the rare intrinsically p-type conducting semiconductors, in addition the energy of its band gap is in the visible spectral range. Thus it is considered to be a promising material for thin-film-solar cell applications. Metallic and ceramic sputtering processes can be used for the thin-film deposition. Depending on the oxygen partial-pressure, the stoichiometric properties of Cu{sub x}O are adjustable from x=2 to x=1. The electrical properties change considerably depending on the copper-to-oxygen-ratio. It is commonly assumed that copper-vacancies are the dominant intrinsic acceptors in Cu{sub 2}O, thus high carrier concentrations come along with a reduced crystalline quality. Using nitrogen-gas for doping allows carrier concentrations of p=10{sup 15}-10{sup 17} cm{sup -3} without significantly reducing the structural properties of the Cu{sub 2}O-thin-films. By using ZnO as n-type semiconductor, first p/n hetero-junctions were realized. The mesa etched structures show rectifying behaviour and its electrical properties are discussed on the conference.

  5. Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

    Energy Technology Data Exchange (ETDEWEB)

    Doka Yamigno, Serge

    2006-08-15

    Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)

  6. Induced effects of Cu underlayer on (111) orientation of Fe50 Mn50 thin films

    Institute of Scientific and Technical Information of China (English)

    WANG Lei; WANG Feng-ping; LIU Huan-ping; WU Ping; QIU Hong; PAN Li-qing

    2005-01-01

    Effects of Cu underlayer on the structure of Fe50 Mn50 films were studied. Samples with a structure of Fe50 Mn50 (200 nm)/Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe50 Mn50 (200 nm)/Cu(20 nm) thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope (FE-SEM) and X-ray diffraction(XRD). Energy dispersive X-ray spectroscopy (EDX) and Auger electron spectroscopy(AES) were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on (111) orientation of Fe50 Mn50 thin films. The induce effects of Cu on (111) orientation of Fe50 Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.

  7. Novel thin-film CuInSe sub 2 fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Mooney, G.D.; Hermann, A.M. (Colorado Univ., Boulder, CO (United States))

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  8. Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2009-08-01

    Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

  9. Temperature-dependent growth of LaAlO3 films on YBa2CuO7 C-axis films for multilayer structures

    Science.gov (United States)

    Hawley, M. E.; Houlton, R. J.; Raistrick, I. A.; Garzon, F. H.

    Fabrication of ultra smooth films, free of micro-shorts, is essential to the development of High Temperature Superconducting (HTS) thin film devices. One such example is a SNS junction consisting of two HTS layers separated by a uniformly smooth continuous barrier material. Other schemes under consideration require multilayer structures of up to 5 - 7 epitaxially grown layers of complex oxide material. Successful fabrication of such devices necessitates understanding the epitaxial growth of polycrystalline oxide films on polycrystalline film templates. Toward this end we have developed a set of deposition parameters that produce high quality epitaxial insulating layers suitable for HTS device applications. All films in this study were grown by off-axis RF magnetron sputter deposition. LaAlO3 films were deposited over MgO grown YBa2Cu3O7 (YBCO) c-axis thin films at temperatures ranging from 200 to 700C and on virgin substrates at 600C. Atomic Force Microscopy, eddy current measurements, and x-ray diffraction techniques were used to monitor the effect of growth conditions on the resulting film crystallinity, nanostructure, and electrical properties. Ex-situ interrupted growth characterization of these materials has yielded new insight into the processes that control the growth mechanism and resulting microstructure. All films were polycrystalline. Below 600C, LaAlO3 films were not epitaxial while films grown at 650C showed some zone group axes(200) orientation. The shape of the underlying YBCO film is most clearly evident for the film grown at 400C. Surface roughness depended on the appearance of crystals on the film surface. The superconducting properties of the underlying YBCO film required O2 annealing prior to deposition of the LaAlO3 layer.

  10. Reaction kinetics of CuGaSe 2 formation from a GaSe/CuSe bilayer precursor film

    Science.gov (United States)

    Kim, W. K.; Payzant, E. A.; Kim, S.; Speakman, S. A.; Crisalle, O. D.; Anderson, T. J.

    2008-06-01

    The reaction pathway and kinetics of CuGaSe 2 formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to β-Cu 2-xSe at around 230 °C, followed by CuGaSe 2 formation accompanied by a decrease in the β-Cu 2-xSe peak intensity at around 260 °C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 °C) of the set of isothermal experiments with estimated activation energies of 115(±16) and 124(±19) kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe 2 forms at the interface of the initial GaSe and CuSe layers.

  11. Correlations between critical current density, j{sub c}, critical temperature, T{sub c}, and structural quality of Y{sub 1}B{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Chrzanowski, J.; Xing, W.B.; Atlan, D. [Simon Fraser Univ., British Columbia (Canada)] [and others

    1994-12-31

    Correlations between critical current density (j{sub c}) critical temperature (T{sub c}) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO{sub 3} single crystals. Distinct maxima in j{sub c} as a function of the linewidths of the (00{ell}) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j{sub c} indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T{sub c} increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j{sub c} and the density of edge dislocations N{sub D} was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N{sub D}{approximately}1-2 x 10{sup 9}/cm{sup 2}.

  12. Structural and optical studies on antimony and zinc doped CuInS2 thin films

    Science.gov (United States)

    Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.; Rezig, B.

    2009-11-01

    The influence of Zn and Sb impurities on the structural, optical and electrical properties of CuInS2 thin films on corning 7059 glass substrates was studied. Undoped and Zn or Sb doped CuInS2 thin films were deposited by thermal evaporation method and annealed in vacuum at temperature of 450 ∘C Undoped thin films were grown from CuInS2 powder using resistively heated tungsten boats. Zn species was evaporated from a thermal evaporator all together to the CuInS2 powder and Sb species was mixed in the starting powders. The amount of the Zn or Sb source was determined to be in the range 0-4 wt% molecular weight compared with the CuInS2 alloy source. The films were studied by means of X-ray diffraction (XRD), Optical reflection and transmission and resistance measurements. The films thicknesses were in the range 450-750 nm. All the Zn: CuInS2 and Sb: CuInS2 thin films have relatively high absorption coefficient between 104 cm-1 and 105 cm-1 in the visible and the near-IR spectral range. The bandgap energies are in the range of 1.472-1.589 eV for Zn: CuInS2 samples and 1.396-1.510 eV for the Sb: CuInS2 ones. The type of conductivity of these films was determined by the hot probe method. Furthermore, we found that Zn and Sb-doped CuInS2 thin films exhibit P type conductivity and we predict these species can be considered as suitable candidates for use as acceptor dopants to fabricate CuInS2-based solar cells.

  13. Growth of YBa 2Cu 3O 7-δ on alkaline earth flouride substrates and thin films

    Science.gov (United States)

    Vasquez, R. P.; Foote, M. C.; Hunt, B. D.; Barner, J. B.

    1993-03-01

    The growth and characterization of YBa 2Cu 3O 7-δ (YBCO) thin films grown by laser ablation on MgF 2 (100), CaF 2 (100), SrF 2 (100), and BaF 2 (100) substrates, and on CaF 2 and BaF 2 thin films on LaAlO 3 (100) substrates, are described. High quality superconducting YBCO films could be grown directly only on the BaF 2 substrates and thin films. YBCO films grown directly on MgF 2 or CaF 2 substrates were insulating and showed clear signs of interdiffusion and reaction, as measured by X-ray photoelectron spectroscopy. Superconducting YBCO films could be grown on SrF 2 and CaF 2 substrates and thin films only with an yttria-stabilized zirconia buffer layer and/or with a low YBCO growth temperature, while YBCO grown on MgF 2 yielded insulating films for all growth conditions investigated. The highest quality YBCO films were obtained on BaF 2 substrates ( Tc=87.6 K, ΔTc=0.3 K). These results are discussed in terms of the thermodynamic stability of possible reaction products and the temperature dependence of the ionic mobilities.

  14. Electrodeposition of CuInX (X=Se,Te) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N.; Rajeshwar, K.

    1986-01-15

    CuInX (X=Se,Te) thin films were electrodeposited and characterized by X-ray diffraction, electron probe microanalyses and Auger electron spectroscopy. New data are presented on the electrochemistry of the deposition process and on the cyclic voltammetric behavior of two different electrolytes Cu/sup +//Cu/sup 2+/ with In/sup 3+/ and SeO/sub 2/ respectively. Finally, some preliminary data are presented for CdS/CuInSe heterojunctions.

  15. RF sputtered CuO thin films: Structural, optical and photo-catalytic behavior

    Science.gov (United States)

    Al-Ghamdi, Attieh A.; Khedr, M. H.; Shahnawaze Ansari, M.; Hasan, P. M. Z.; Abdel-wahab, M. Sh.; Farghali, A. A.

    2016-07-01

    Nanocrystalline CuO thin films were deposited for 600, 1200 and 1800 s on glass substrate using RF magnetron sputtering technique. The films deposited at room temperature were crystalline and showed Tenorite phase of CuO. The increase in average particle size from 6.67 nm to 9.09 nm and the thickness from 160 nm to 490 nm was observed with the increase in deposition time. The optical band gap was decreased from 2.2 eV to 1.73 eV as the film thickness was increased. The intensity of PL peak showed its maximum for the film deposited for 600 s and minimum for 1800 s. Some unusual emission peaks were observed due to the quantization effect and lattice/surface defects. The CuO films with different thicknesses could be used as photo-catalysts for the degradation of Methylene blue (MB) from the wastewater. Under the exposure of 200 W energy of tungsten lamp, CuO thin films showed excellent photo-catalytic activities. CuO thin film of minimum thickness of around 160 nm responded as a best catalyst for MB degradation. The films were very stable and have a speciality to be recycled without much loss of their photo-catalytic activity. These characteristics have proved the high possibility of commercial applications of CuO thin films in environmental remediation.

  16. RF Magnetron Sputtering Grown Cu2O Film Structural, Morphological, and Electrical Property Dependencies on Substrate Type.

    Science.gov (United States)

    Ahn, Heejin; Um, Youngho

    2015-03-01

    We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.

  17. Properties of Spray ILGAR CuInS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Camus, C. [Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin (Germany)], E-mail: christian.camus@hmi.de; Allsop, N.A.; Gledhill, S.E.; Bohne, W.; Roehrich, J.; Lauermann, I.; Lux-Steiner, M.C.; Fischer, Ch.-H. [Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin (Germany)

    2008-08-30

    CuInS{sub 2} thin films were prepared by using the recently presented Spray Ion Layer Gas Reaction (Spray ILGAR). Originally designed for buffer layer deposition this process has now been significantly modified in order to deposit absorber layers for thin film solar cells with thicknesses in the micrometer range. Several post deposition treatments are applied to these films. In this report the CuInS{sub 2} films are characterized regarding structure, bulk and surface composition. X-Ray Diffraction (XRD), X-Ray Fluorescence Spectroscopy (XRF), X-Ray Photoemission Spectroscopy (XPS), and Elastic Recoil Detection Analysis (ERDA) were employed to compare the composition of these films to reference CuInS{sub 2} films, which were prepared by Rapid Thermal Processing (RTP). It is shown that in terms of composition and surface chemistry the ILGAR films are very similar to device grade reference samples.

  18. Charge recombination in CuPc/PTCDA thin films.

    Science.gov (United States)

    Heutz, S; Nogueira, A F; Durrant, J R; Jones, T S

    2005-06-16

    The recombination kinetics of photogenerated charge carriers in perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) thin films grown by organic molecular beam deposition have been studied using transient absorption spectroscopy. Optical excitation is observed to generate long-lived polaron states, which exhibit power law recombination dynamics on time scales from microseconds to milliseconds. Studies as a function of excitation density and temperature, and comparison between heterostructures and PTCDA single layers, all indicate that this power law behavior results from trapping of PTCDA- polarons in localized states, with an estimated trap state density of approximately 6 x 10(17) polarons cm(-3). This recombination behavior is found to be remarkably similar to that previously observed for polymer/fullerene blends, suggesting that it may be generic to a range of semiconducting materials.

  19. Comparative electron microprobe investigation of the Y-Ba-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rezvitskii, V.V.; Bondarenko, I.I.; Treiger, B.A.; Volkov, L.A. (A.S. Pushkin State Pedagogical Inst., Kirovograd (USSR)); Mazalov, L.N.; Fyodorov, V.E.; Dubinin, N.P.; Amelichev, A.G.; Vratskikh, V.F. (Inst. of Inorganic Chemistry, Academy of Sciences, Novosibirsk (USSR))

    1990-10-15

    The results of electron probe investigation of the samples of Y-Ba-Cu-O thin films sputtered by different methods are presented. The regularities of the thin film growth are discussed. The relative intensity of copper L alpha to K alpha lines is proposed to be used for the comparison of the thicknesses of thin films. (orig.).

  20. Temperature-assisted morphological transition in CuPc thin films

    Science.gov (United States)

    Bae, Yu Jeong; Pham, Thi Kim Hang; Kim, Tae Hee

    2016-05-01

    Ex-situ and in-situ morphological analyses were performed for Cu-phthalocyanine (CuPc) organic semiconductor films by using atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED). The focus was the effects of post-annealing on the structural characteristics of CuPc films grown on MgO(001) layers by using an ultra-high-vacuum thermal evaporator. Sphere-to-nanofibril and 2-D to 3-D morphological transitions were observed with increasing CuPc thickness beyond 3 nm. The surface morphology and the crystallinity were drastically improved after an additional cooling of the post-annealed CuPc films thinner than 3 nm. Our results highlight that molecular orientation and structural ordering can be effectively controlled by using different temperature treatments and a proper combination of material, film thickness, and substrate.

  1. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  2. Heteroepitaxial Cu2O thin film solar cell on metallic substrates.

    Science.gov (United States)

    Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

    2015-11-06

    Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm(2) V(-1) s(-1) and carrier concentration over 10(16) cm(-3). The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate.

  3. Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si

    Energy Technology Data Exchange (ETDEWEB)

    Mansell, R.; Petit, D. C. M. C.; Fernández-Pacheco, A.; Lavrijsen, R.; Lee, J. H.; Cowburn, R. P. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2014-08-14

    Thin films of Co and Co/Cu/Co trilayers with wedged Cu interlayers were grown epitaxially on Cu buffer layers on hydrogen passivated Si(001) wafers. We find that single Co layers have a well-defined four-fold anisotropy but with smaller in-plane anisotropies than observed in Co grown on Cu crystals. Ruderman–Kittel–Kasuya–Yosida (RKKY) interlayer coupling is observed in one Co/Cu/Co sample which is the smoothest of the films as measured by atomic force microscopy. Some of the films also form a dot-like structure on the surface. Intermixing at elevated temperatures between the Cu buffer and Si limits the ability to form flat surfaces to promote RKKY coupling.

  4. Characterization of Cu1.4Te Thin Films for CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Guangcan Luo

    2014-01-01

    Full Text Available The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

  5. Photoinduced superhydrophilicity of TiO2 thin film with hierarchical Cu doping

    Directory of Open Access Journals (Sweden)

    Zhifeng Liu, Yun Wang, Xinli Peng, Yabin Li, Zhichao Liu, Chengcheng Liu, Jing Ya and Yizhong Huang

    2012-01-01

    Full Text Available Hydrophilic Cu–TiO2 thin films with a gradient in the Cu concentration were prepared on glass by layer-by-layer dip-coating from TiO2 precursors. The effects of the Cu doping on the structure and properties of TiO2 self-cleaning thin films are discussed. The Cu gradient markedly affects the hydrophilicity of the films, with the water contact angle significantly reduced compared with those of the pure or uniformly doped TiO2 thin films. This enhanced hydrophilicity is explained by the more efficient absorption of the solar light and by the reduced recombination of photoexcited electrons and holes in the TiO2 films containing a gradient of Cu dopants.

  6. Enhancing Chemical Stability of Electroplated Cu Films by Engineering Electrolyte Chemistry and Twinning Structure

    Science.gov (United States)

    Yang, Chih-Jie; Huang, Chun-Lung; Liao, Chien-Neng

    2015-07-01

    The effects of an electrolyte additive and twinning structure on the corrosion characteristics of electroplated Cu films have been investigated. Four different Cu films were individually deposited with and without benzotriazole (BTA) in the electrolyte using the direct-current (DC) and pulsed-current (PC) plating techniques. The Cu films plated with BTA additive showed improved corrosion resistance according to electrochemical polarization testing and postetching morphological inspection. Moreover, the PC-plated films that had dense nanoscale twin boundaries appeared to have higher chemical stability than the DC-plated ones. It is proposed that the presence of twin-modified grain boundary segments suppresses corrosion along the grain boundary network and improves the corrosion resistance of electroplated Cu films.

  7. Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

    Institute of Scientific and Technical Information of China (English)

    QI Xuelian; REN Chunsheng; MA Tengcai; WANG Younian

    2008-01-01

    Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.

  8. Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin films

    OpenAIRE

    2009-01-01

    A dc magnetron sputtering-based method to grow high-quality Cu2ZnSnS4 (CZTS) thin films, to be used as an absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post-growth KCN treatment for removal of possible undesired Cu2−xS phases. In this work, we report the results of a study of the effects of changing the precursors’ deposition order on the final CZTS films’ morphological and st...

  9. The effect of composition on structural and electronic properties in polycrystalline CuGaSe2 thin film

    Institute of Scientific and Technical Information of China (English)

    Zhang Li; He Qing; Xu Chuan-Ming; Xue Yu-Ming; Li Chang-Jian; Sun Yun

    2008-01-01

    Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by co-evaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spec-troscope (XRD) and x-ray fluorescence (XRF). A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are de-tected by scanning electron microscope (SEM) for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass (AM)1.5 spectrum for 100 mW/cm2 at room temperature (aperture area, 0.24cm2). The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.

  10. Crednerite-CuMnO{sub 2} thin films prepared using atmospheric pressure plasma annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hong-Ying, E-mail: hychen@cc.kuas.edu.tw [Department of Chemical and Materials Engineering, National Kaohsiung University of Applied Sciences, 415 Chiken Kuang Road, Kaohsiung 807, Taiwan, ROC (China); Lin, Yu-Chang [Department of Chemical and Materials Engineering, National Kaohsiung University of Applied Sciences, 415 Chiken Kuang Road, Kaohsiung 807, Taiwan, ROC (China); Lee, Jiann-Shing [Department of Applied Physics, National Pingtung University, 4-18 Minsheng Road, Pingtung City 900, Taiwan, ROC (China)

    2015-05-30

    Highlights: • Crednerite-CuMnO{sub 2} thin films were formed at atmospheric pressure plasma with N{sub 2}–(5–10)%O{sub 2}. • The binding energy of Cu-2p spectrum of the crednerite-CuMnO{sub 2} thin films was 932.3 eV (Cu{sup +}). • The binding energies of Mn-3p spectrum were 48.1 ± 0.2 eV (Mn{sup 3+}) and 50.0 ± 0.2 eV (Mn{sup 4+}). • The cation distribution in the crednerite-CuMnO{sub 2} thin films was Cu{sub 1.0}{sup +}(Mn{sub 0.6}{sup 3+}Mn{sub 0.4}{sup 4+})O{sub 2}. • The electrical conductivity of CuMnO{sub 2} thin films was (2.61–2.65) × 10{sup 4} Ω cm. - Abstract: This study reports the preparation of crednerite-CuMnO{sub 2} thin films using atmospheric pressure plasma annealing. The pristine thin films were deposited onto a quartz substrate using the sol–gel process. The specimens were then annealed using atmospheric pressure plasma at N{sub 2}–(0–20%)O{sub 2} for 20 min. Crednerite-CuMnO{sub 2} thin films were obtained using atmospheric pressure plasma annealing at N{sub 2}–5%O{sub 2} and N{sub 2}–10%O{sub 2}. The lattice parameters of the thin films were a = 0.5574–0.5580 nm, b = 0.2874–0.2879 nm, c = 0.5878–0.5881 nm, and β = 104.15–104.25°, which agree well with previous reports. The Raman shifts of the crednerite-CuMnO{sub 2} thin films were 688 ± 2 cm{sup −1}, 381 ± 2 cm{sup −1}, and 314 ± 2 cm{sup −1}. The binding energy of Cu-2p spectrum of the crednerite-CuMnO{sub 2} thin films was 932.3 ± 0.2 eV representing the Cu{sup +} in the thin films. The binding energies of Mn-3p spectrum were 48.1 ± 0.2 eV (Mn{sup 3+}) and 50.0 ± 0.2 eV (Mn{sup 4+}). Furthermore, the cation distribution in the thin films was Cu{sup +}{sub 1.0}(Mn{sup 3+}{sub 0.6}Mn{sup 4+}{sub 0.4})O{sub 2} from the X-ray photoelectron spectroscopy measurement. When the crednerite-CuMnO{sub 2} phase was formed, the surface morphology exhibited a compact/dense granular morphology. The optical bandgap of the crednerite-CuMnO{sub 2} thin

  11. Characterization of Electrodeposited Nanoporous Ni and NiCu Films

    Science.gov (United States)

    Koboski, Kyla; Hampton, Jennifer

    2013-03-01

    Nanoporous thin films are interesting candidates to catalyze certain reactions because of their large surface areas. This project focuses on the deposition of Ni and NiCu thin films on a Au substrate and further explores the catalysis of the hydrogen evolution reaction (HER). Depositions are created using controlled potential electrolysis. Samples are then dealloyed using linear sweep voltammetry. Before and after the dealloying, all the samples are characterized using multiple techniques. Electrochemical capacitance measurements allow comparisons of sample roughness. HER measurements characterize the reactivity of the sample with respect to the specific catalytic reaction. The Tafel equation is fit to the data to obtain information about the kinetics of the HER of the samples. Other methods for characterizing the samples include scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The use of SEM allows images to be taken of the deposition to determine the change in the structure pre- and post- dealloy of the sample. EDS allows the elemental composition of the deposition to be determined before and after the dealloy stage. This material is based upon work supported by the National Science Foundation under RUI Grant DMR-1104725, MRI Grant CHE-1126462, MRI Grant CHE-0959282, and ARI grant PHY-0963317.

  12. The electrical and optical properties of Cu-doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060 (China); Cai, Xing-Min, E-mail: caixm@graduate.hku.hk [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060 (China); Zhong, Xue; Tian, Xiao-Qing [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060 (China); Jing, Shou-Yong [The Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060 (China); Huang, Long-Biao; Roy, V.A.L. [Center of Super-Diamond and Advanced Films (COSDAF)and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China); Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Tin; Zheng, Zhuang-Hao; Liang, Guang-Xing [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060 (China)

    2014-04-01

    To study the effect of Cu doping, In{sub 2}O{sub 3} and Cu-doped In{sub 2}O{sub 3} films were deposited on K9 glass and Si substrates with the same experimental parameters. All the films were found to be body centered cubic and have the same preferred orientation. No secondary phases were detected in Cu-doped In{sub 2}O{sub 3}. The atomic ratio of Cu to Cu plus In was approximately 18% in Cu-doped In{sub 2}O{sub 3} films which were found to be n-type. After Cu doping, the resistivity of the films increased by 3 to 4 orders of magnitude and the film with higher Cu content had larger resistivity, due to compensation. Cu doping is found to widen the optical band gap of In{sub 2}O{sub 3} films, possibly due to a metal–insulator transition. - Highlights: • Cu doping changes neither the structure nor the preferred orientation of the films. • Cu doped In{sub 2}O{sub 3} are n-type. • Cu doped In{sub 2}O{sub 3} films have much larger resistivity than undoped In{sub 2}O{sub 3}. • Cu doped In{sub 2}O{sub 3} films have larger optical band gaps than undoped In{sub 2}O{sub 3}.

  13. Spray ILGAR growth and Raman spectroscopy of CuInS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Camus, Christian

    2008-08-15

    The thesis treats the development of a spray ILGAR process for the vacuum-free fabrication of CuInS{sub 2} thin-films for photovoltaic applications. The deposition of the CuInS{sub 2} thin-films pursues by cyclically repeated spraying of a precursor layer of In{sub 2}O{sub 3} and Cu and their subsequent sulfurization by H{sub 2}S. Hereby the incomplete sulfurization of In{sub 2}O{sub 3} was observed. For the complete sulfurizatrion the films were tempered in Ar/H{sub 2}S atmosphere. The films consisted of two regions of different crystallinity. The part lying on the substrate contained several thin CuInS{sub 2} layers separated by carbon containing interlayers. The upper part of the films formed a polycrystalline CuInS{sub 2} layer with grain sizes of 100-1000 nm. The first part of the thesis describes the analysis of the growth process. For this the intermediate products of the partial steps of the spray ILGAR process were studied with different analysis methods (XPS, XAS, XRF, ERDA, TEM, SEM). From these studies a growth model was derived. The carbon containing interlayers were reduced to the implementation of organic groups of the applied copper compound. The formation of the upper CuInS{sub 2} layer was explained by in-diffusion of In into Cu{sub (2-x)}S agglomerates on the film surface, which are formed earlier by the fast diffusion of Cu in Cu{sub (2-x)}S and CuInS{sub 2}S. In the second part of the thesis the structural properties of the CuInS{sub 2} films were studied by means of Raman spectroscopy. It was shown that the CuInS{sub 2} layers contained in the lower part two CuInS{sub 2} phases: The chalcopyrite phase and the cation superstructure CuAu I. The upper CuInS{sub 2} layer contained however exclusively chalcopyrite. By Raman measurements on the film backside the carbon containing interlayers could be identified as mixture of (nanocrystalline) graphite and amorphous carbon. Furthermore the asymmetric line shape of the A1 chalcopyrite-CuInS{sub 2

  14. Fabrication and characterization of CuInSe{sub 2} thin films from In{sub 2}Se{sub 3} and Cu{sub 2}Se precursors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jin Soo [Korea Inst. of Energy and Resources, Daeduk (Korea, Republic of); Huh, Gyung Jae; Kwon, Se Han; Ahn, Byung Tae [Korea Advanced Energy Research Inst., Daeduk-Danji (Korea, Republic of). Korea Nuclear Safety Center

    1995-12-01

    CuInSe{sub 2} this films as a light absorber layer were fabricated by vacuum evaporation using In{sub 2}Se{sub 3} and Cu{sub 2}Se precursors and their properties were analyzed. Indium selenide films of 0.5{mu}m thickness were first deposited by vacuum evaporation of In{sub 2}Se{sub 3} on a Corn ing 7059 glass substrate. The films deposited at susceptor temperature of 400 degree showed a flat surface morphology with densely packed grain structure. CuInSe{sub 2} films directly formed by evaporating Cu{sub 2}Se in the pre-deposited In{sub 2}Se{sub 2} films also showed a very flat surface when the susceptor temperature was 700 degree. Cu{sub 2}Se, a second phase in the CuInSe{sub 2} film, was removed by evaporating additional In{sub 2}Se{sub 3} on the CuInSe{sub 2} film at 700 degree. The grain size of 1.2{mu}m thick CuInSe{sub 2} film was about 2{mu}m and the film had a (112) preferred orientation. As the amount of deposited In{sub 2}Se{sub 3} increased, the electrical resistivity of CuInSe{sub 2} films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04 eV. The CuInSe{sub 2} film grown in a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe{sub 2}/Mo structure may be realized based on the above CuInSe{sub 2} films. (author). 16 refs., 11 figs.

  15. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  16. Effect of microstructure on thermal conductivity of Cu, Ag thin films.

    Science.gov (United States)

    Ryu, Sang; Juhng, Woonam; Kim, Youngman

    2010-05-01

    Thin film type materials are widely used in modern industries, such as semiconductor devices, functional superconductors, machining tools, and so on. The thermal properties of material in semiconductor are very important factors for stable operation because the heat generated during device operation may increase clock frequency. Even though thermal properties of thin films may play a major role in assessing reliability of parts, the measurement methods of thin film thermal properties are generally known to be complex to devise. In this study, a temperature distribution method was applied for the measurement of thermal conductivity of Cu and Ag thin film on borosilicate glass substrate. Cu and Ag thin films were deposited on borosilicate glass using thermal evaporation processes. To measure the thermal conductivity changes according to the microstructure of metallic thin film, the processing variables for the Cu and Ag thin film deposition were changed. To minimize the effect of film thickness, the film thickness was fixed to the thickness of approximately 500 nm throughout experiments. The thermal conductivities of thin films were measured to be much lower than those of bulk materials. Thin film with larger grain size showed higher thermal conductivity probably due to the lower number density of grain boundary. Weidman-Franz law could be applied to thin films produced in this study. Thermal conductivity was also estimated from the resistivity of thin film and Lorenz number of bulk material.

  17. Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India); Panchal, A.K. [Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India)

    2016-05-06

    First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the order of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.

  18. In-situ fabrication of Y-Ba-Cu oxide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bowman, R.M.; Ferguson, A.L.; Pegrum, C.M. (Strathclyde Univ., Glasgow (United Kingdom). Dept. of Applied Physics)

    1991-03-01

    This paper reports the in-situ deposition of laser-ablated YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on MgO substrates, using the third and second harmonics of a Nd-YAG laser. The authors investigate the conditions needed during post-deposition oxygenation to produce the best films. The authors highly-oriented samples are made using the third harmonic (wavelength {lambda} = 355 nm) on {l angle}100{r angle} MgO and have a transition temperature T{sub c} of 85K, a critical current density J{sub c} of 1.5 {times} 10{sup 5} A/cm{sup 2} at 4.2 K. Films made with the second harmonic on MgO are, as expected, markedly poorer in quality. Highly-oriented films have also been made on {l angle}110{r angle} and {l angle}100{r angle} SrTiO{sub 3} with {lambda} = 355 nm.

  19. Fabrication and characterization of vacuum evaporated Al:CuSe2 thin films

    Science.gov (United States)

    Muthukannan, Abirami; Henry, J.; Sivakumar, G.; Mohanraj, K.

    2016-01-01

    We present first report on Al doped CuSe2 thin films deposited on to the glass substrate using elemental precursors Cu, Al and Se by thermal evaporation method. The structural, morphological and optoelectronic properties of the grown films were analysed by using XRD, SEM, AFM, UV-Visible and I-V analysis respectively. The XRD study of the annealed film showed polycrystalline nature. The predominant orientation along (1 0 1) direction corresponding to orthorhombic structure of CuSe2 with an additional phase of Al2Se3 along (-3 1 4) and (3 3 1) direction. The SEM and AFM images of the annealed film bears densely packed grains and the surface roughness is found to be about 21.16 nm respectively. The direct band gap and resistivity is decreased in annealed film when compared to the as-deposited film. It could be attributed to the influence of annealing process.

  20. Quality analysis of the Al-Si-Cu alloy castings

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2007-04-01

    Full Text Available The developed design methodologies both the material and technological ones will make it possible to improve shortly the quality of materials from the light alloys in the technological process, and the automatic process flow correction will make the production cost reduction possible, and - first of all - to reduce the amount of the waste products. Method was developed for analysis of the casting defects images obtained with the X-ray detector analysis of the elements made from the Al-Si-Cu alloys of the AC-AlSi7Cu3Mg type as well as the method for classification of casting defects using the artificial intelligence tools, including the neural networks; the developed method was implemented as software programs for quality control. Castings were analysed in the paper of car engine blocks and heads from the Al-Si-Cu alloys of the AC-AlSi7Cu3Mg type fabricated with the “Cosworth” technological process. The computer system, in which the artificial neural networks as well as the automatic image analysis methods were used makes automatic classification possible of defects occurring in castings from the Al-Si-Cu alloys, assisting and automating in this way the decisions about rejection of castings which do not meet the defined quality requirements, and therefore ensuring simultaneously the repeatability and objectivity of assessment of the metallurgical quality of these alloys.

  1. Nanostructured CuO Thin Films Prepared through Sputtering for Solar Selective Absorbers

    Directory of Open Access Journals (Sweden)

    Senthuran Karthick Kumar

    2013-01-01

    Full Text Available Nanostructured cupric oxide (CuO thin films have been deposited on copper (Cu substrates at different substrate temperatures and oxygen to argon gas ratios through direct current (DC reactive magnetron sputtering. The deposited CuO thin films are characterized by using X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, profilometry, and spectrophotometry techniques. The crystalline phases, morphology, optical properties, and photothermal conversion efficiency of the CuO thin films are found to be significantly influenced by the change in substrate temperature and oxygen to argon gas ratio. The variations in the substrate temperature and oxygen to argon gas ratio have induced changes in Cu+ and Cu2+ concentrations of the CuO thin films that result in corresponding changes in their optical properties. The CuO thin film prepared at a substrate temperature of 30°C and O2 to Ar gas ratio of 1 : 1 has exhibited high absorptance and low emittance; thus, it could be used as a solar selective absorber in solar thermal gadgets.

  2. Characterization of Cu{sub 2−x}Se thin films synthesized from electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tung-Cheng [Department of Materials Engineering, Tatung University, Taipei, Taiwan (China); Hu, Yi, E-mail: huyi@ttu.edu.tw [Department of Materials Engineering, Tatung University, Taipei, Taiwan (China); Chang, Wen-Bing [Department of Computer Science and Information Engineering, Taipei Chengshih University of Science and Technology, Taipei, Taiwan (China)

    2014-02-15

    Highlights: • Cu{sub 2−x}Se films were electrodeposited on Mo substrate with CuSO{sub 4} and H{sub 2}SeO{sub 3}. • The deposited films were near-stoichiometric Cu{sub 2−x}Se with FCC structure. • The direct band gap for Cu{sub 2−x}Se thin films are in the range of 2.14–2.18 eV. -- Abstract: Copper selenide (Cu{sub 2−x}Se) thin films were potentiostatically deposited on molybdenum substrate with an aqueous solution of CuSO{sub 4} and H{sub 2}SeO{sub 3}. The effect of the deposition potential on the microstructure and electrical properties of the thin films were studied using FESEM, HRTEM, and two probe conducting measurements. The morphologies of the films changed from densely packed nanoparticles to the plate-like grains growing perpendicular to the substrate. In addition, these plates were composed of nanoparticles of about 100–200 nm in size. The nanoparticles were verified to be the face centered cubic (FCC) Cu{sub 2−x}Se from XPS and HRTEM analysis. The direct band gap for the Cu{sub 2−x}Se thin films was in the range of 2.14–2.18 eV measured from UV–vis absorption edge. The electrical conductivity of the thin films increased from 4.51 × 10{sup −3} to 7.08 × 10{sup −3} (Ω m){sup −1} as the Cu/Se ratio decreased from 1.92 to 1.89.

  3. Engineering of electronic and optical properties of PbS thin films via Cu doping

    Science.gov (United States)

    Touati, Baligh; Gassoumi, Abdelaziz; Dobryden, Illia; Natile, Marta Maria; Vomiero, Alberto; Turki, Najoua Kamoun

    2016-09-01

    Copper-doped PbS polycrystalline thin films were deposited by chemical bath deposition by adding small amount of Cu (ysolution = [Cu2+]/[Pb2+]) between 0.5 and 2 at%. The composition, structure, morphology, optical and electrical properties of the films were investigated by means of X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS), UV-visible-near infrared (UV-Vis-NIR) spectrophotometry and Hall effect measurements. The XRD studies showed that the undoped films have PbS face centered cubic structure with (111) preferential orientation, while preferential orientation changes to (200) plane with increasing Cu doping concentration. The AFM and SEM measurements indicated that the film surfaces consisted of nanosized grains with pyramidal shape. Optical band gap was blue shifted from 0.72 eV to 1.69 eV with the increase in Cu doping concentration. The film obtained with the [Cu2+]/[Pb2+] ratio equal to 1.5 at% Cu showed the minimum resistivity of 0.16 Ω cm at room temperature and optimum value of optical band gap close to 1.5 eV. 1.5 at% Cu-doped PbS thin films exhibit the best optical and electrical properties, suitable for solar cells applications.

  4. Optimization of large area YBa 2Cu 3O 7-x films by single target ion beam sputtering

    Science.gov (United States)

    Gauzzi, A.; Lucia, M. L.; Affronte, M.; Pavuna, D.

    1991-12-01

    We report on the in-situ growth over large area of high-quality homogeneous YBa 2Cu 3O 7-x films by single target ion beam sputtering. The ‘123’ stoichiometry transfer to the substrates is obtained by using sufficiently low power ion beam and a grazing angle between the ion beam and the target. The as-deposited films show consistent homogeneity and reproducible superconducting properties (ΔT c10 6 A cm -2 at 77 K) over areas larger than ≈30 cm 2.

  5. Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Xin, Peipei

    interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

  6. Effect of Applied Current Density on Morphological and Structural Properties of Electrodeposited Fe-Cu Films

    Institute of Scientific and Technical Information of China (English)

    Umut Sarac; M. Celalettin Baykul

    2012-01-01

    A detailed study has been carried out to investigate the effect of applied current density on the composition, crystallographic structure, grain size, and surface morphology of Fe-Cu films. X-ray diffraction (XRD) results show that the films consist of a mixture of face-centered cubic (fcc) Cu and body centered cubic (bcc) ~-Fe phases. The average crystalline size of both Fe and Cu particles decreases as the applied current density becomes more negative. Compositional analysis of Fe-Cu films indicates that the Fe content within the films increases with decreasing current density towards more negative values. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) have been used to investigate the surface morphology of Fe-Cu films. It is observed that the surface morphology of the films changes from dendritic structure to a cauliflower structure as the applied current density becomes more negative. The surface roughness and grain size of the Fe-Cu films decrease with decreasing applied current density towards more negative values.

  7. Electrodeposition and properties of Zn, Cu, and Cu{sub 1−x} Zn{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Özdemir, Rasim [Kilis Vocational High School, Kilis 7 Aralık University, 79000 Kilis (Turkey); Karahan, İsmail Hakkı, E-mail: ihkarahan@gmail.com [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, 31040 Hatay (Turkey)

    2014-11-01

    Highlights: • Cu, Zn and Cu–Zn deposits successfully deposited from the non-cyanide sulphate electrolyte. • The effect of alloying element was investigated on the electrical resistivity and the structure of Cu–Zn alloy. • The average crystallite size of the samples varied from 66 to 161 nm and decreased when the Zn and Cu combined in Cu–Zn. • Microstrain has been decreased with increasing crystallite size. • Electrical resistivity of alloy was obtained between the Zn and Cu films. - Abstract: The electrodeposition of Cu, Zn and Cu–Zn deposits from the non-cyanide Zn sulphate and Cu sulphate reduced by citrate at constant stirring speed has been investigated. The composition of the Cu–Zn bath was shown to influence the morphology, electrical resistivity, phase composition, and Cu and Zn content of the Cu–Zn deposits. Their structural and electrical properties have been investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDAX), cyclic voltammeter (CV) and current–voltage measurements against the temperature for electrical resistivity, respectively. XRD shows that Cu–Zn samples are polycrystalline phase. Resistivity results show that the copper film exhibits bigger residual resistivity than both the zinc and the Cu–Zn alloy. Theoretical calculations of the XRD peaks demonstrate that the average crystallite size of the Cu–Zn alloy decreased and microstrain increased when the Cu alloyed with zinc.

  8. Micro-Raman Study of Orientation Effects of CuxSe-Crystallites on Cu-rich CuGaSe2 Thin Films

    Science.gov (United States)

    Xue, C.; Papadimitriou, D.; Raptis, Y. S.; Richter, W.; Esser, N.; Siebentritt, S.; Lux-Steiner, M. Ch.

    2004-08-01

    The structural properties of copper selenide (CuxSe), formed as a secondary phase on the surface of CuGaSe2 films grown under Cu-rich conditions on GaAs (100) substrates, were studied by micro-Raman spectroscopy. Raman bands at 45 and 263cm-1, observed on crystallites dispersed on the CuGaSe2 film, are in agreement with the Raman modes of CuSe and Cu2Se. Polarization- and angular-dependent micro-Raman measurements reveal that the CuxSe-crystallites are grown with a preferential orientation on the CuGaSe2 surface.

  9. Effects of Excess Cu Addition on Photochromic Properties of AgCl-Urethane Resin Composite Films

    Directory of Open Access Journals (Sweden)

    Hidetoshi Miyazaki

    2013-01-01

    Full Text Available AgCl-resin photochromic composite films were prepared using AgNO3, HCl-EtOH, CuCl2 ethanol solutions, and a urethane resin as starting materials. The AgCl particle size in the composite films, which was confirmed via TEM observations, was 23–43 nm. The AgCl composite films showed photochromic properties: coloring induced by UV-vis irradiation and bleaching induced by cessation of UV-vis irradiation. The coloring and bleaching speed of the composite film increases with increasing CuCl2 mixing ratio.

  10. Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

    Science.gov (United States)

    Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

    2017-02-01

    Dielectric breakdown induced by Cu ion migration in porous low-k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low-k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

  11. The Effect of Diffusion Barrier and Bombardment on Adhesive Strength of CuCr Alloy Films

    Institute of Scientific and Technical Information of China (English)

    WANGJian-feng; SONGZhong-xiao; XUKe-wei; WANGYuan

    2004-01-01

    A novel co-sputtering method that combined magnetron sputtering (MS) with ion beam sputtering (IBS) was used to fabricate CuCr alloy films without breaking vacuum after depositing diffusion barrier with IBS. Different bombardment energies were used to improve the comprehensive properties of Cu alloy film. The results indicated that the effects of diffusion barriers and bombardment energy on adhesive strength could be evaluated by a rolling contact fatigue adhesion test. Diffusion barrier can enhance the adhesive strength, and the adhesion of CuCr/CrN was higher than that of CuCr/TiN. When bombarding energy was higher, the adhesive strength of CuCr/TiN films was higher due to the broader transition zone.

  12. Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

    Science.gov (United States)

    Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

    1997-02-01

    YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

  13. Fabrication of electrodeposited Ni-Cu/Cu multilayered films and study of their nanostructures before and after annealing

    Directory of Open Access Journals (Sweden)

    I Kazeminezhad

    2008-07-01

    Full Text Available  In this work electrodeposited Ni-Cu/Cu metallic multilayered films with different thicknesses of Ni and Cu were prepared on (100 polycrystalline Cu substrates. The nanostructure of the multilayers was studied using XRD. The existence of satellite peaks in the XRD patterns showed that the multilayered films have superlattice structures. The difference between the intensity of ML(200 and ML(111 peaks showed that the multilayers have a strong texture of (100 as their substrate structures which confirms the epitaxial growth. The morphology of the films was studied by SEM. The SEM images showed that the surface of the films is rough. The samples were also analyzed using EDX and the results showed that the real content of Ni is less than its nominal content this refers to the current efficiency which is less than unity due to hydrogen evolution. In the second stage of the work some identical samples which have the highest order of satellite peaks were electrodeposited. The samples were annealed at different temperatures and times. Their structures were then studied by XRD. The XRD patterns of the annealed samples showed that if the temperature and time of annealing increase, the satellite peaks begin to disappear. It means by increasing these two parameters, the sharpness of the bilayer interface decreases and the multilayered structure tends to become alloy structure. The morphology of the samples was also studied by SEM. The SEM images showed that the surface of the annealed films becomes approximately uniform due to the diffusion of Ni and Cu atoms to Cu and Ni layers, respectively.

  14. Third order optical susceptibilities of the Cu{sub 2}O thin film

    Energy Technology Data Exchange (ETDEWEB)

    Fu Ming; Long Hua; Wang Kai; Yang Guang; Lu Peixiang, E-mail: lupeixiang@mail.hust.edu.cn

    2011-07-29

    By performing Z-scan method with a femtosecond laser (800 nm, 50 fs, 1 kHz), we investigated the third-order optical nonlinearities of a cuprous oxide (Cu{sub 2}O) film. Single-phase Cu{sub 2}O film deposited on a quartz substrate was obtained using the pulsed laser deposition technique. The structure properties, surface morphology and optical transmission spectrum were characterized by X-ray diffraction, scanning electron microscopy and double beam spectrophotometer, respectively. The Z-scan results show that the Cu{sub 2}O film exhibits large nonlinear refractive index, n{sub 2} = 3 x 10{sup -3} cm{sup 2}/GW, while the two-photon absorption coefficient, {alpha}{sub 2} = 40 cm/GW, is relatively small. It implies that the Cu{sub 2}O film is a promising candidate for nonlinear photonic devices.

  15. Study of the growth of CuAlS{sub 2} thin films on oriented silicon (111)

    Energy Technology Data Exchange (ETDEWEB)

    Brini, R. [Laboratoire de Photovoltaique et Materiaux Semiconducteurs.(LPMS), Ecole Nationale d' ingenieurs de Tunis (ENIT), BP 37 le Belvedere 1002 Tunis (Tunisia)], E-mail: Brini_rawdha@yahoo.fr; Schmerber, G. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS) UMR7504 CNRS-ULP, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semiconducteurs.(LPMS), Ecole Nationale d' ingenieurs de Tunis (ENIT), BP 37 le Belvedere 1002 Tunis (Tunisia); Werckmann, J. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS) UMR7504 CNRS-ULP, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Rezig, B. [Laboratoire de Photovoltaique et Materiaux Semiconducteurs.(LPMS), Ecole Nationale d' ingenieurs de Tunis (ENIT), BP 37 le Belvedere 1002 Tunis (Tunisia)

    2009-02-02

    Within the chalcopyrite family the sulphur based compounds CuMS{sub 2} (M = In, Ga, Al) have attracted much interest in recent years because they show a direct wide band-gap covering from E{sub gap} = 1.53 eV (CuInS{sub 2}) over E{sub gap} = 2.43 eV (CuGaS{sub 2}) to E{sub gap} = 3.49 eV (CuAlS{sub 2}). Therefore they are particularly suitable for optoelectronic as well as photovoltaic applications. The CuAlS{sub 2} semiconductor is one of these compounds and has good luminescent properties and a wide direct gap of 3.5 eV making it suitable for the use as material for light-emitting devices in the blue region of the spectrum. To dig up fully its potential a better understanding of the fundamental properties of the CuAlS{sub 2} film itself is essential, which could be achieved from high-quality single-crystalline materials. So, the aim of this work has been to study the growth of multilayer CuAlS{sub 2} thin films on Si(111) substrates at a substrate temperature of 723 K. One, two and three layers with 60, 120 and 180 nm thicknesses, respectively, were deposited on Si(111) substrate. The effect of the CuAlS{sub 2} layer numbers on the structure, morphology and optical properties of the samples was investigated. The X-ray diffraction studies revealed that all the samples are polycrystalline in nature, single CuAlS{sub 2} phase and exhibiting chalcopyrite structure with a preferred orientation along the (112) direction. However, the sample with three CuAlS{sub 2} layers exhibit the highly oriented (112) plane with grain sizes of 80 nm. So we show that this experimental process affects significantly the structural properties of the CuAlS{sub 2} films. Raman spectroscopic measurements indicated five prominent peaks at 193, 205, 325, 335 and 370 cm{sup -1}. The possible origin of the 370 cm{sup -1} peak was investigated and was found to be some local vibration in the structure. The peaks at 193-205 and 335 cm{sup -1} were ascribed to A{sub 1} and B{sub 2} modes

  16. Optical characterization of Cu3N thin film with Swanepoel method

    Science.gov (United States)

    Dorranian, Davoud; Dejam, Laya; Mosayebian, Gelareh

    2012-07-01

    Swanepoel method is employed for spectroscopic determination of optical properties of Cu3N thin film using transmittance data. Investigated films have been deposited using reactive magnetron sputtering system. Deposition time was 9 to 21 min. Refractive index, absorption coefficient, and bandgap energy of the samples are determined. Thickness of the films is calculated by Swanepoel method, and result is compared with the thickness of the films measured by profilmeter. It is shown that Swanepoel method is a reliable way to calculate the optical constants of thin films when the transmittance spectrum of the film is influenced by wavelike patterns due to reflection of the probe beam from different interfaces.

  17. Structured SiCu thin films in LiB as anodes

    Energy Technology Data Exchange (ETDEWEB)

    Polat, B.D., E-mail: bpolat@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Eryilmaz, O.L.; Erck, R. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Keleş, O., E-mail: ozgulkeles@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Erdemir, A. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Amine, K. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2014-12-01

    Both helical and inclined columnar Si–10 at.% Cu structured thin films were deposited on Cu substrates using glancing angle deposition (GLAD) technique. In order to deposit Cu and Si two evaporation sources were used. Ion assistance was utilized in the first 5 min of the GLAD to enhance the adhesion and the density of the films. These films were characterized by thin film XRD, GDOES, SEM, and EDS. Electrochemical characterizations were made by testing the thin films as anodes in half-cells for 100 cycles. The results showed that the columnar SiCu thin film delivered 2200 mAh g{sup −1}, where the helical one exhibited 2600 mAh g{sup −1}, and, their initial coulombic efficiencies were found to be 38%–50% respectively. For the columnar and the helical thin film anodes, sustainable 520 and 800 mAh g{sup −1} with 90% and 99% coulombic efficiencies were achieved for 100 cycles. These sustainable capacities showed the importance of the thin film structure having nano-sized crystals and amorphous particles. The higher surface area of the helices increases the capacity of the electrode because the contact area of the thin film anode with Li ions is increased, and the polarization which otherwise forms on the anode surface due to SEI formation is decreased. In addition, because of larger interspaces between the helices the ability of the anode to accommodate the volumetric changes is improved, which results in a higher coulombic efficiency and capacity retention during cycling test. - Highlights: • Cu and Si atoms were co-evaporated to form composite thin film. • GLAD is an alternative method to form new electrodes for LIB. • Uses of the composite helices and nanocolumns as anodes were shown experimentally. • IAD was used to improve the adhesion of the structured thin films. • High surface area, porosities and Cu presence improve the Si anode performance.

  18. Effect of Cu doping on the properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells

    Science.gov (United States)

    Tang, J.; Mao, D.; Trefny, J. U.

    1997-02-01

    The effects of Cu doping concentration and post-deposition annealing treatment on the properties of ZnTe thin films were investigated in an effort to decrease the Cu doping concentration and improve the long-term stability of CdS/CdTe/ZnTe solar cells. The structural, compositional, and electrical properties were studied systematically using x-ray diffraction (XRD), electron microprobe, Hall effect and conductivity measurements. XRD measurements indicated that the crystalline phase of as-deposited and low-temperature annealed ZnTe films is dependent on Cu doping concentration. Low-Cu-doped films exhibited zincblende phase, whereas high-Cu-doped films showed wurtzite phase. After annealing at high temperature (⩾350 °C), all films exhibited zincblende structure. Electron probe microanalysis revealed a deficiency of cations in low-Cu-doped films and an excess of cations in high-Cu-doped films. Hall effect measurements revealed a dependence of hole mobility on Cu doping concentration with the highest mobility (20 cm2/Vṡs) obtained at a low Cu concentration. Carrier concentrations higher than mid-1016cm-3 were obtained at a Cu concentration of 2 at. % and relatively low annealing temperatures. Studies of the activation energy of dark conductivity suggested that intrinsic defects (e.g., Zn vacancies) are the dominant acceptors for Cu concentrations lower than 4.5 at. %. Finally, ZnTe films with Cu concentrations as low as 1 at. % were used successfully as a back contact layer in CdTe based solar cells. Fill factors over 0.70 were obtained using ZnTe films of low Cu concentrations.

  19. Growth and Raman scattering characterization of Cu2ZnSnS4 thin films

    OpenAIRE

    Fernandes, P. A.; Salomé, P M P; Cunha, A. F. da

    2009-01-01

    In the present work we report the results of the growth, morphological and structural characterization of Cu2ZnSnS4 (CZTS) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. The adjustment of the thicknesses and the properties of the precursors were used to control the final composition of the films. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition ...

  20. Kinetic Monte Carlo simulation of physical vapor deposition of thin Cu film

    Institute of Scientific and Technical Information of China (English)

    WANG Jun; CHEN Chang-qi; ZHU Wu

    2004-01-01

    A two-dimensional Kinetic Monte Carlo method has been developed for simulating the physical vapor deposition of thin Cu films on Cu substrate. An improved embedded atom method was used to calculate the interatomic potential and determine the diffusion barrier energy and residence time. Parameters, including incident angle,deposition rate and substrate temperature, were investigated and discussed in order to find their influences on the thin film morphology.

  1. Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

    Directory of Open Access Journals (Sweden)

    Xiaowei Li

    2015-01-01

    Full Text Available Structure and properties of Cu-doped diamond-like carbon films (DLC were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.% on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

  2. Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaowei; Ke, Peiling; Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-01-15

    Structure and properties of Cu-doped diamond-like carbon films (DLC) were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.%) on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

  3. Cyclic Voltammetry Measurement for Cu2O Based Homostructure Thin Film

    Science.gov (United States)

    Mohamad Arifin, Nurliyana Binti; Mohamad, Fariza Binti; Sikh Anuar, Nur Fathiah Binti; Ahmad, Nabihah Binti; Nor, Nik Hisyamudin Muhd; Izaki, Masanobu

    2017-08-01

    This experiment is about fabrication of homojunction Copper Oxide (Cu2O) thin film by using electrodeposition method. The p-n homojunction Cu2O was successfully prepared by consecutively depositing p-type Cu2O layer on n-type Cu2O layer by using copper acetate based solution through potentiostatic electrodeposition. At first, the n-type Cu2O was fabricated at pH 6.2 and 6.5 with fixed potential of -0.125V vs Ag/AgCl and time deposition at 30 minutes. Cyclic voltammetry (CV) measurement was carried out on this sample to determine the ideal potential range for fabrication of p-type Cu2O on n-type Cu2O/FTO substrate. From the result, deposition potential of -0.35V and -0.4V vs Ag/AgCl were appropriated for p-type Cu2O thin film fabrication. These potential values were variable with the selected pH values of 12.0 and 12.5 to fabricate the p-type Cu2O thin film. The other parameters such as deposition time fixed at 2 hours bath temperature was set up at 60°C. It was found that the optimum potential deposition was -0.4V vs Ag/AgCl and pH value appropriate for homostructure Cu2O thin film was pH 12.5. Morphological, structural, optical and conductivity characterization of p-n homojunction Cu2O thin film was characterized using Field Emission Scanning Electron Microscopy, X-Ray Diffractometer, Ultraviolet-Visible Spectroscopy and Photoelectrochemical (PEC) cells, respectively.

  4. A comparison study of Co and Cu doped MgO diluted magnetic thin films

    Science.gov (United States)

    Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

    2017-02-01

    Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

  5. Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

    2015-05-01

    Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

  6. Electrochemically synthesized CuInSe2 thin films from non-aqueous electrolyte for solar cell applications

    Science.gov (United States)

    Londhe, Priyanka U.; Rohom, Ashwini B.; Lakhe, Manorama G.; Bhand, Ganesh R.; Chaure, Nandu B.

    2016-12-01

    Highly polycrystalline CuInSe2 (CIS) thin films have been electrodeposited from non-aqueous ethylene glycol (EG) solvent on fluorine-doped tin-oxide-coated glass substrates at 130 °C. The co-deposition potential for Cu, In and Se was optimized by using cyclic voltammetry. CIS layers have been electrodeposited from -1.1 V to -1.5 V versus the Ag/AgCl reference electrode. The effect of selenization on structural, morphological, optical and compositional properties has been studied extensively. Highly crystalline CIS thin films are electrodeposited for all reported growth potentials without post-annealing treatment. The Raman spectra of stoichiometric CIS thin films showed a dominant A1 mode with features receptive to the crystalline quality of the layers. Noticeable changes in the surface morphology and composition of films deposited at different deposition potential were observed. All CIS layers were void free, compact, uniform, and well adherent to the substrates with particle size ˜1-3 μm. Both as-deposited and selenized samples were Cu-rich, however, the composition of selenium remained closer to the ideal value, 50%. A typical solar cell prepared at -1.3 V measured V OC = 0.316 V, J SC = 26 mA, FF = 49, and η = 4.2, under illuminated conditions at 100 mW cm-2.

  7. Dealloying Behavior of NiCo and NiCoCu Thin Films

    Directory of Open Access Journals (Sweden)

    Benjamin E. Peecher

    2016-01-01

    Full Text Available Porous metals and alloys, such as those fabricated via electrochemical dealloying, are of interest for a variety of energy applications, ranging from their potential for enhanced catalytic behavior to their use as high surface area supports for pseudocapacitor materials. Here, the electrochemical dealloying process was explored for electrodeposited binary NiCo and ternary NiCoCu thin films. For each of the four different metal ratios, films were dealloyed using linear sweep voltammetry to various potentials in order to gain insight into the evolution of the film over the course of the linear sweep. Electrochemical capacitance, scanning electron microscopy, and energy dispersive X-ray spectroscopy were used to examine the structure and composition of each sample before and after linear sweep voltammetry was performed. For NiCo films, dealloying resulted in almost no change in composition but did result in an increased capacitance, with greater increases occurring at higher linear sweep potentials, indicating the removal of material from the films. Dealloying also resulted in the appearance of large pores on the surface of the high nickel percentage NiCo films, while low nickel percentage NiCo films had little observable change in morphology. For NiCoCu films, Cu was almost completely removed at linear sweep potentials greater than 0.5 V versus Ag/AgCl. The linear sweep removed large Cu-rich dendrites from the films, while also causing increases in measured capacitance.

  8. Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

    Indian Academy of Sciences (India)

    R H Bari; L A Patil; A Soni; G S Okram

    2007-04-01

    Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1.87–12.15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.

  9. Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition

    Science.gov (United States)

    Kim, Dong Hun; Kim, Tae Cheol; Lee, Seung Han; Jung, Hyun Kyu; Jeong, Jaeeun; Han, Seung Ho

    2017-02-01

    The crystal structure and magnetic properties of epitaxial ZnO thin films doped with 5 at% Cu on SrTiO3 (001) and (111) substrates were investigated. In the case of films deposited in oxygen, unique crystallographic growth directions on different substrates were observed, while a metallic phase was detected in films grown under vacuum. The Cu-doped ZnO thin films deposited on the SrTiO3 (111) substrates, with hexagonal structures, showed a single epitaxial relationship with the substrates, whereas those deposited on the SrTiO3 (001) substrates showed a double epitaxial growth mode. The epitaxial ZnCuO thin films deposited on the SrTiO3 (111) substrates under high vacuum exhibited a ferromagnetic signal at room temperature.

  10. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    Science.gov (United States)

    Tripathi, T. S.; Yadav, C. S.; Karppinen, M.

    2016-04-01

    We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  11. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    T. S. Tripathi

    2016-04-01

    Full Text Available We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD from Cu(thd2, Cr(acac3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  12. Strain relaxation in thin films of Cu grown on Ni(001)

    DEFF Research Database (Denmark)

    Rasmussen, F.B.; Baker, J.; Nielsen, M.;

    1998-01-01

    Surface X-ray diffraction and kinematical model calculations are used to determine the strain relaxation of embedded wedges with internal (111) facets formed in thin Cu films when grown on Ni(001). We show the wedges to be inhomogenously strained with a large lateral relaxation near the Cu...

  13. Oxygen content of YBaCuO thin films during growth by pulsed laser deposition

    NARCIS (Netherlands)

    Garcia lopez, F.J.; Garcia lopez, J.J.; Blank, David H.A.; Rogalla, Horst

    1998-01-01

    The oxidation ability of the laser plasma plume during in situ formation of YBa2Cu3O6+x (YBaCuO) thin films has been studied as a function of the deposition conditions. A quenching technique has been used immediately after termination of growth to avoid any oxygen in or out-diffusion during the

  14. Characteristics and Mechanism of Cu Films Fabricated at Room Temperature by Aerosol Deposition

    Science.gov (United States)

    Lee, Dong-Won; Kwon, Oh-Yun; Cho, Won-Ju; Song, Jun-Kwang; Kim, Yong-Nam

    2016-03-01

    We were successful in growing a dense Cu film on Al2O3 substrates at room temperature using an aerosol deposition (AD) method. The characteristics of Cu films were investigated through electrical resistivity and X-ray photoelectron spectroscopy (XPS). The resistivity of Cu films was low (9.2-12.5 μΩ cm), but it was five to seven times higher than that of bulk copper. The deterioration of the resistivity indicates that a Cu2O phase with CuO occurs due to a particle-to-particle collision. Moreover, the growth of Cu films was investigated by observing their microstructures. At the initial stage in the AD process, the impacted particles were flattened and deformed on a rough Al2O3 substrate. The continuous collision of impacted particles leads to the densification of deposited coating layers due to the plastic deformation of particles. The bonding between the Cu particles and the rough Al2O3 substrate was explained in terms of the adhesive properties on the surface roughness of Al2O3 substrates. It was revealed that the roughness of substrates was considerably associated with the mechanical interlocking between Cu particles and rough Al2O3 substrate.

  15. Atomistic simulation of Cu-Ta thin film deposition and other phenomena

    NARCIS (Netherlands)

    Klaver, T.P.C.

    2004-01-01

    Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chips, where it should prevent the mixing of Cu into Si and SiO. The deposition of thin Cu films onto various Ta substrates has been studied through molecular dynamics simulations, using either empirical

  16. Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-05-15

    Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

  17. Electrochemical growth and studies of CuInSe2 thin films

    Science.gov (United States)

    Prasher, Dixit; Chandel, Tarun; Rajaram, Poolla

    2014-04-01

    Thin films of CuInSe2 were grown on fluorine doped tin oxide (complexation. CuInSe2 films were also deposited without using any complexing agent in the bath. To improve the crystallinity the CuInSe2 films were annealed in vaccum at 300 °C for one hour. The annealed films were analyzed by x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive analysis of x-rays (EDAX), atomic force microscopy (AFM) and optical spectra. The results obtained in this work show that by adding a suitable complexing agent to the electrochemical bath, nanocrystalline CuInSe2, 20 nm to 30 nm in size, can be grown. The composition of the CuInSe2 films can be controlled by means of the bath composition and stoichiometric films can be obtained for a bath with ionic Cu:In:Se composition close to 1:4:2. AFM micrographs show that the particles are generally oval shaped for near stoichiometric compositions. However for extreme copper rich layers, the morphology is completely different, the particles in this case appearing in the form of nanoflakes. Each flake has a thickness in the nano range, but the surface extends to a length of several microns.

  18. Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

    Science.gov (United States)

    Yakushev, M. V.; Márquez-Prieto, J.; Forbes, I.; Edwards, P. R.; Zhivulko, V. D.; Mudryi, A. V.; Krustok, J.; Martin, R. W.

    2015-12-01

    Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

  19. Large area superconducting YBa 2Cu 3O 7-x films grown by single target ion beam sputtering

    Science.gov (United States)

    Gauzzi, Andrea; Lucía, Maria L.; Kellett, Bruce J.; James, Jonathan H.; Pavuna, Davor

    1991-10-01

    We have demonstrated, by using a simple single YBa 2Cu 3O 7- x target ion beam system that, with a sufficiently low power ion beam, preferential sputtering is avoided and high-quality YBa 2Cu 3O 7- x films are deposited over areas larger than ≈ 30 cm 2 in a reproducible way. As-deposited films on SrTiO 3 are 50-100 nmthick, c-oriented and show the following reproducible electrical properties (within the given variations): Tc0 =90±0.5 K, transitions widths less than 1 K, j inc(77 K)=1.0-1.2× 10 6 A cm -2, ϱ(300 K)=300±50μΩ cm, ϱ(300 K)/ ϱ(100 K)=2.9±0.1. The extrapolated residual resistivity ϱ res(O K) is between 0 and 5% of ϱ(300 K).

  20. The structural and electro-optical characteristics of AZO/Cr:Cu/AZO transparent conductive film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tien-Chai [Department of Electrical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China); Huang, Wen-Chang, E-mail: wchuang@mail.ksu.edu.tw [Department of Electro-Optical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China); Tsai, Fu-Chun [Department of Electro-Optical Engineering, Kun Shan University, No. 195, Kun-Da Road, Yung-Kang Dist., Tainan 71003, Taiwan, ROC (China)

    2015-08-31

    A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO (ACCA), was presented in the paper. The structural and electro-optical properties of the ACCA film were discussed. The thickness of the middle metal layer was constant and those of the AZO layers were varied. The ACCA film shows an obvious ZnO (002) c-axis preferential growth. No diffraction peaks related to Cr and Cu were observed through x-ray diffraction analysis. The middle Cr:Cu layer showed a thickness of 8.16 nm with a continuous and amorphous structure by the observation of a high-resolution transmission electron microscopy (HR-TEM). For the electro-optical characteristic, a best figure of merit (FOM) value of 3.54 × 10{sup −3} Ω{sup −1} with a corresponding transmittance of 85% was obtained at the thickness of 116 nm of ACCA film. The high FOM value of the film is due to the improvement of conductivity and small sacrifices of transparency. - Highlights: • A novel triple-layered transparent conductive film, AZO/Cr:Cu/AZO is developed. • Chromium is added to copper to reduce the oxidation–reduction reaction. • The film has a FOM of 3.54 × 10{sup −3} Ω{sup −1} with a corresponding transmittance of 85%. • The Cr:Cu layer shows a continuous and amorphous structure.

  1. SIMS study of Cu trapping and migration in low-k dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Li Yupu; Hunter, Jerry; Tate, Tom J

    2004-06-15

    A 545 nm thick low-k dielectric film was implanted at room temperature with 50 keV {sup 63}Cu{sup +} to a dose of 1.0x10{sup 14} atoms/cm{sup 2}. The film is a SiO{sub x}-based material and doped with about 8 at.% of flourine. Analyses by secondary-ion mass spectrometry show that Cu is fast diffuser in the low-k film, and after the RTA anneals Cu has redistributed within the film and some Cu has migrated to the interface between the low-k film and Si substrate. At 800 deg. C RTA, the apparent 'diffusion' coefficient in the implanted film, D{sub A}, is estimated as {approx}1.5x10{sup -9} cm{sup 2}/s. The 1100 deg. C RTA sample was re-analysed after stripping the low-k film and the result showed that 4.0x10{sup 12} atoms/cm{sup 2} Cu had moved into the silicon substrate to a depth of about 170 nm.

  2. Effects of nitrogen atoms of benzotriazole and its derivatives on the properties of electrodeposited Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hoe Chul; Kim, Myung Jun; Lim, Taeho; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Kim, Soo-Kil, E-mail: sookilkim@cau.ac.kr [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul 156-756 (Korea, Republic of); Kim, Jae Jeong, E-mail: jjkimm@snu.ac.kr [School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Gwanak 1, Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of)

    2014-01-01

    Additives having azole groups with different numbers of nitrogen atoms, such as indole, benzimidazole, indazole, benzotriazole (BTA), and 1H-benzotriazole-methanol (BTA-MeOH) were adopted to improve the mechanical hardness of electrodeposited Cu films. The effects of these additives on the film properties were elucidated in relation to their number of nitrogen atoms. Electrochemical current–potential behaviors showed that the additives containing three nitrogen atoms (BTA and BTA-MeOH) more effectively inhibited Cu electrodeposition. The inhibition strongly affected the film properties, resulting in reduced grain size and surface roughness, and increased resistivity and hardness. Cu films deposited with BTA or BTA-MeOH also exhibited 35% reduced grain size and 1.5-time higher hardness than Cu films deposited in electrolyte containing other BTA-derivatives having fewer nitrogen atoms. This notable grain refining effect of BTA and BTA-MeOH can be evaluated with respect to the strong interaction of their nitrogen atoms with the substrate and the copper ions, as well. - Highlights: • Additives of similar structure containing 1, 2, and 3 nitrogen atoms were used. • Additives with 3 nitrogen atoms more strongly inhibited Cu deposition than others. • Additives containing 3 nitrogen atoms efficiently affected film properties. • Additives having 3 nitrogen atoms remarkably improved film hardness.

  3. Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition

    Science.gov (United States)

    Ashida, Atsushi; Sato, Shunsuke; Yoshimura, Takeshi; Fujimura, Norifumi

    2017-06-01

    Controlling the native carrier is essential for using Cu2O in devices such as solar cells. The origin of the native p-type carrier in Cu2O is thought to be copper vacancies (VCu). In this work, epitaxially grown Cu2O thin films were prepared by electrochemical deposition at a low temperature of 45 °C on a Pt (111) cathodic electrode. The sources of Cu and O for Cu2O were Cu2+ and OH- in the electrolyte and the ion concentrations were changed to control the stoichiometry of deposition and the density of VCu. The density of ionized acceptors (NA+) in the Cu2O films was evaluated by the C-V properties measured with Schottky electrodes. NA+ did not depend on [Cu2+], whereas NA+ increased with increasing [OH-] when [OH-] was larger than 10-3 mol/L (electrolyte pH >11) with [Cu2+] fixed at 10-1 mol/L. The ion concentration dependence of NA+ and the dependence of the total cathodic current density revealed that the generation of VCu was affected by a complex combination of the ion concentrations and film growth rate.

  4. Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

    Institute of Scientific and Technical Information of China (English)

    雷冲; 赵新杰; 王天生; 彭纬; 虞红春; 陈莺飞; 田永君; 李林

    2002-01-01

    TI2 Ba2 CaCu2Ox (TI-2212) thin films were prepared by the two-step technique. A precursor film was first prepared by the pulsed laser deposition method, and then experienced the incorporation of thalliation in a one-step or two-step annealing process. The experimental results show that the two-step annealing process produces dense and smoothfilms, and that the one-step annealing process produces a high critical temperature film of 101K, but the transition width is wide. Precursor films with homogeneous Ba2Ca1.sCu2.1 Ox composition are essential for producing high-quality T1-2212 films.

  5. Nano-structured CuO-Cu2O Complex Thin Film for Application in CH3NH3PbI3 Perovskite Solar Cells

    Science.gov (United States)

    Chen, Lung-Chieh; Chen, Cheng-Chiang; Liang, Kai-Chieh; Chang, Sheng Hsiung; Tseng, Zhong-Liang; Yeh, Shih-Chieh; Chen, Chin-Ti; Wu, Wen-Ti; Wu, Chun-Guey

    2016-09-01

    Nano-structured CuO-Cu2O complex thin film-based perovskite solar cells were fabricated on an indium tin oxide (ITO)-coated glass and studied. Copper (Cu) thin films with a purity of 99.995 % were deposited on an ITO-coated glass by magnetron reactive sputtering. To optimize the properties of the nano-structured CuO-Cu2O complex thin films, the deposited Cu thin films were thermally oxidized at various temperatures from 300 to 400 °C. A CH3NH3PbI3 perovskite absorber was fabricated on top of CuO-Cu2O complex thin film by a one-step spin-coating process with a toluene washing treatment. Following optimization, the maximum power conversion efficiency (PCE) exceeded 8.1 %. Therefore, the low-cost, solution-processed, stable nano-structured CuO-Cu2O complex thin film can be used as an alternative hole transport layer (HTL) in industrially produced perovskite solar cells.

  6. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-12-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  7. Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

    Science.gov (United States)

    Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

    2017-06-01

    In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells. [Figure not available: see fulltext.

  8. Designing a stronger interface through graded structures in amorphous/nanocrystalline ZrCu/Cu multilayered films.

    Science.gov (United States)

    Chang, C H; Hsieh, C H; Huang, J C; Wang, C; Liao, Y C; Hsueh, C H; Du, X H; Wang, Z K; Wang, X

    2016-06-03

    Many multilayered nano-structures appear to fail due to brittle matter along the interfaces. In order to toughen them, in this study, the microstructure and interface strength of multilayered thin films consisting of amorphous ZrCu and nanocrystalline Cu (with sharp or graded interfaces) are examined and analyzed. The interface possesses a gradient nature in terms of composition, nanocrystalline phase size and volume fraction. The bending results extracted from the nano-scaled cantilever bending samples demonstrate that multilayered films with graded interfaces would have a much higher interface bending strength/strain/modulus, and an overall improvement upgrade of more than 50%. The simple graded interface design of multilayered thin films with improved mechanical properties can offer much more promising performance in structural and functional applications for MEMS or optical coating.

  9. Effect of Cu/(Zn+Sn) ratio on the properties of co-evaporated Cu{sub 2}ZnSnSe{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Suresh Babu, G.; Kishore Kumar, Y.B.; Uday Bhaskar, P.; Raja Vanjari, Sundara [Sri Venkateswara University, Solar Energy Laboratory, Department of Physics, S.V.U. Campus, Tirupati 517 502 (India)

    2010-02-15

    The effect of Cu/(Zn+Sn) ratio on the properties of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films is investigated. CZTSe thin films with Cu/(Zn+Sn) ratio in the range 0.85-1.15 are deposited using 4-source co-evaporation technique onto glass substrates held at a substrate temperature T{sub s}=623 K and post-deposition annealed at T{sub pa}=723 K for 1 h in the selenium atmosphere. Powder X-ray diffraction (XRD) patterns reveal that CZTSe films deposited with Cu/(Zn+Sn) ratio in the range 0.90-1.10 are single phase and polycrystalline. CZTSe films, deposited with Cu/(Zn+Sn) ratio of 0.85 contain ZnSe as secondary phase and films with ratio of 1.15 contain Cu{sub 2-X}Se as the secondary phase. The films are found to exhibit kesterite structure. Band gap of the films is found to increase with decrease in Cu/(Zn+Sn) ratio. Electrical resistivity of the films is found to lie in the range 0.02-23-{omega}-cm depending on Cu/(Zn+Sn) ratio. (author)

  10. Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Zhao Yan-Min; Liu Xing-Jiang; Ao Jian-Ping; Sun Yun

    2011-01-01

    Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.

  11. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    Science.gov (United States)

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased.

  12. Comparative study of the structural and optical properties of Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) thin films and optoelectronic devices

    Science.gov (United States)

    Dong, Yuchen; Shen, Peng; Li, Xinran; Chen, Ye; Sun, Lin; Yang, Pingxiong; Chu, Junhao

    2016-11-01

    The structural and optical properties of Cu2SnX3 (CTX, X = S, Se) and Cu2ZnSnX4 (CZTX, X = S, Se) thin films have been investigated experimentally. CTX and CZTX thin films were grown on a Mo-coated soda lime glass substrate by annealing the metallic stack precursors prepared by radio-frequency magnetron sputtering. The similar structure of CTX and CZTX causes overlap of the diffraction peaks in the x-ray diffraction (XRD) pattern. Additionally, selenization annealing is an easier procedure than sulfurization annealing. The results of Raman scattering spectroscopy and Fourier transform infrared spectroscopy provide evidence regarding structure and phase identification to complement the information obtained from XRD. Optical characterization demonstrates that CTX has a narrower band gap than CZTX, attributed to band gap evolution from ternary to quaternary compounds with cation occupation. A photoelectric detector and thin film solar cell (TFSC) were prepared with the eco-friendly compounds Cu2SnS3 (CTS) and Cu2ZnSnS4 (CZTS). Device performance for both photoelectric detector and TFSC is improved by integrating CZTS thin film rather than CTS thin film. The simpler structure of a photoelectric detector provides an easy way to detect the quality of the thin film before it is applied to fabricate the whole TFSC structure.

  13. Photoconductivity of Polymer Composite Films Containing an Mn(III)/Cu(II) Complex

    Science.gov (United States)

    Davidenko, N. A.; Kokozay, V. N.; Petrusenko, S. R.; Stetsyuk, O. N.; Studzinsky, S. L.; Davidenko, I. I.

    2013-11-01

    We have studied the optical, photoelectric and dielectric properties of polymer composite films based on polyvinyl butyral with additives of a mixed-metal Mn(III)/Cu(II) complex. We observed high photoconductivity of the films obtained in the region of absorption by the complex. The slow photocurrent rise and relaxation kinetics are connected with the low mobility of the photogenerated charge carriers.

  14. Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

    Science.gov (United States)

    Mei, YU; Luo, H. L.; Hu, Roger

    1990-01-01

    Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

  15. ARXPS-studies ofcˆ-axis textured YBa2Cu3Ox-films

    NARCIS (Netherlands)

    Halbritter, J.; Walk, P.; Mathes, H.-J.; Hauser, B.; Rogalla, H.

    1988-01-01

    YBa2Cu3Ox sputter deposited cold on MgO grows in O2 annealing epitaxially to a transparent, superconducting film with Tc 80K. The unscraped surfaces of these films are smooth showing XPS lines changing with photoelectron take-off angle. This enhanced data base allows to separate the different chemic

  16. Outstanding Antibiofilm Features of Quanta-CuO Film on Glass Surface.

    Science.gov (United States)

    Tripathy, Nirmalya; Ahmad, Rafiq; Bang, Seung Hyuck; Khang, Gilson; Min, Jiho; Hahn, Yoon-Bong

    2016-06-22

    Intelligently designed surface nanoarchitecture provides defined control over the behavior of cells and biomolecules at the solid-liquid interface. In this study, CuO quantum dots (quanta-CuO; ∼3-5 nm) were synthesized by a simple, low-temperature solution process and further formulated as paint to construct quanta-CuO thin film on glass. Surface morphological characterizations of the as-coated glass surface reveal a uniform film thickness (∼120 ± 10 nm) with homogeneous distribution of quanta-CuO. The antibiofilm assay showed a very high contact bacteria-killing capacity of as-coated quanta-CuO glass surfaces toward Staphylococcus aureus and Escherichia coli. This efficient antibacterial/antibiofilm activity was ascribed to the intracellular reactive oxygen species (ROS) generated by the quanta-CuO attached to the bacterial cells, which leads to an oxidative assault and finally results in bacterial cell death. Although there is a significant debate regarding the CuO nanostructure's antibacterial mode of action, we propose both contact killing and/or copper ion release killing mechanisms for the antibiofilm activity of quanta-CuO paint. Moreover, synergism of quanta-CuO with conventional antibiotics was also found to further enhance the antibacterial efficacy of commonly used antibiotics. Collectively, this state-of-the-art design of quanta-CuO coated glass can be envisioned as promising candidates for various biomedical and environmental device coatings.

  17. 硫化时间对CuInS2薄膜微结构的影响%Effects of Sulfurization Time on Microstructure of CuInS2 Films

    Institute of Scientific and Technical Information of China (English)

    夏冬林; 徐俊; 刘俊; 雷盼

    2012-01-01

    采用磁控溅射技术在镀Mo玻璃基片上沉积Cu-In金属预制膜后在N2气氛下硫化制备CuInS2薄膜.研究热处理硫化时间对CuInS2薄膜的表面形貌和晶相结构性能的影响.利用场发射扫描电镜(FE-SEM)、X射线衍射(XRD)和Raman光谱等测试手段对薄膜的表面形貌和晶相结构进行表征.实验结果表明,采用磁控溅射金属预制膜经适当的时间硫化所制备的CuInS2薄膜为黄铜矿结构,随着硫化时间的增加,CuInS2薄膜的晶粒的形貌由球形结构向片状结构转化,并且硫化时间越长,所得薄膜的结晶性能越好,但过长的硫化时间会生成Cu-Au相而导致薄膜质量的劣化.%Copper indium disulfide thin films were prepared on Mo-coated glass substrates by sulfurization treatment in N2 atmosphere of the Cu-In metallic precursors deposited by magnetron sputtering. The effects of sulfurization time on the surface morphology and microstructures of the resulting thin films were investigated. The microstructures of CuInS2 absorber films were characterized by field emission scanning electron microscopy ( FE-SEM), X-ray diffraction ( XRD) and Raman spectror-copy. The results indicated that with proper sulfurization time the resulting CuInS2 thin films have chalcopyrite structure, the grains morphology evolves from spherical structure into sheet structure, the crystallinity of the CuInS2 films gets better with the increase of sulfurization time. However, the Cu-Au phase occurs in the films treated for too long time, making the films quality worse.

  18. X-ray-absorption fine-structure studies of superconducting Tl2CaBa2Cu2Ox thin films

    Science.gov (United States)

    Dimarzio, D.; Wiesmann, H.; Chen, D. H.; Heald, S. M.

    1990-07-01

    Superconducting Tl-Ca-Ba-Cu-O thin films have been prepared by the technique of reactive magnetron sputtering using targets of Tl, Ca-Ba, and Cu. Three films with different quality superconducting transitions were fabricated and analyzed. X-ray-absorption fine-structure measurements were performed on the Cu K edge in order to determine orientation, bond lengths, number of nearest neighbors, and relative disorder as a function of the quality of their superconducting transition. Magnetically oriented powder samples of the appropriate superconducting phase were used for comparison. X-ray-absorption near-edge results reveal increasing CuO2 plane orientation parallel to the substrate as the quality of the superconducting transition improved, consistent with x-ray-diffraction data. Extended x-ray-absorption fine-structure (EXAFS) measurements also show this trend. EXAFS gives a Cu-O(1) bond length of 1.92+/-0.01 Å for all three films, and all three samples exhibit an increasing Debye-Waller disorder factor consistent with the deterioration in the quality of their superconducting transitions.

  19. Deposition and characterization of CuInSe{sub 2} films for solar cells using an optimized chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M. [Division Corrosion, INTEMA, CONICET, Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Schreiner, W.H. [Laboratorio de Superficies e Interfases, Departamento de Fisica, Universidade Federal do Parana, 81531-990 Curitiba, PR (Brazil); Cere, S. [Division Corrosion, INTEMA, CONICET, Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Vazquez, M., E-mail: mvazquez@fi.mdp.edu.ar [Division Corrosion, INTEMA, CONICET, Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2011-02-10

    Research highlights: > CuInSe{sub 2} has been deposited on glass by optimizing some parameters in the SILAR method. > Renewing the precursors after 40 cycles improves the composition of the deposit. > Photoelectrochemical tests and Mott-Schottky analysis confirm p-type conduction. > The quality of the material shows potential for application in solar cell devices. - Abstract: CuInSe{sub 2} (CISe) thin films have been deposited on glass using successive ionic layer adsorption and reaction (SILAR). The as-deposited films are treated at 400 deg. C in argon atmosphere and etched in KCN solution to remove detrimental secondary phases. The preparation and temperature of the precursor solutions, the duration of the reaction cycles and the duration of the annealing stage have been optimized. The films have been characterized employing grazing incident X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and energy dispersive scanning spectroscopy. Relevant semiconductor parameters have been calculated. Photoelectrochemical tests confirm p-type conduction. The films are crystalline and the stoichiometry can be improved by renewing the precursor solution after completing half of the cycles, annealing for 90 min and later etching in KCN. The quality of the material seems to be promising for application in solar cell devices.

  20. Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water

    Indian Academy of Sciences (India)

    Diwakar Chauhan; V R Satsangi; Sahab Dass; Rohit Shrivastav

    2006-12-01

    Nanostructured copper oxide thin films (CuO) were prepared on conducting glass support (SnO2: F overlayer) via sol–gel starting from colloidal solution of copper (II) acetate in ethanol. Films were obtained by dip coating under room conditions (temperature, 25–32°C) and were subsequently sintered in air at different temperatures (400–650°C). The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Average particle size, resistivity and band gap energy were also determined. Photoelectrochemical properties of thin films and their suitability for splitting of water were investigated. Study suggests that thin films of CuO sintered at lower temperatures (≈ 400°C) are better for photoconversion than thick films or the films sintered at much higher temperatures. Plausible explanations have been provided.

  1. Accurate quantification of Cu(In,Ga)Se{sub 2} films by AES depth profiling analysis

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jong Shik [Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), 267, Gajeong-ro, Yuseong-gu, Daejeon (Korea, Republic of); Department of Physics, Chungbuk National University, 52 Naesudong-ro, Heungdeok-gu, Cheongju, Chungbuk 361-763 (Korea, Republic of); Hwang, Hye Hyen [Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), 267, Gajeong-ro, Yuseong-gu, Daejeon (Korea, Republic of); Kang, Hee Jae [Department of Physics, Chungbuk National University, 52 Naesudong-ro, Heungdeok-gu, Cheongju, Chungbuk 361-763 (Korea, Republic of); Chae, Hong-Chol [Center for Research Instruments and Experimental Facilities, Chungbuk National University, 52 Naesudong-ro, Heungdeok-gu, Cheongju, Chungbuk 361-763 (Korea, Republic of); Chung, Yong-Duck [Advanced Solar Tech Dept, Electronics and Telecommunications Research Institute (ETRI), 218, Gajeong-ro, Yuseong-gu, Daejeon (Korea, Republic of); Kim, Kyung Joong, E-mail: kjkim@kriss.re.kr [Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), 267, Gajeong-ro, Yuseong-gu, Daejeon (Korea, Republic of); Department of Nano Science, Korea University of Science and Technology, 217, Gajeong-ro, Yuseong-gu, Daejeon (Korea, Republic of)

    2013-10-01

    Quantitative analysis of Cu(In,Ga)Se{sub 2} (CIGS) films with non-uniform depth distributions was investigated by Auger electron spectroscopy (AES) depth profiling. The atomic fractions of the CIGS films were measured by relative sensitivity factors determined by a total number counting method from a CIGS reference film certified by isotope dilution–inductively coupled plasma/mass spectrometry. In the AES depth profiling analysis of the CIGS films, the intensities of Auger electron peaks in Cu, In, Ga and Se were determined by integrating the individual Auger peak intensities in the whole depth range of the AES depth profiles. The atomic fractions measured by AES analysis were linearly proportional to the certified values. The uncertainty in the AES depth profiling analysis of CIGS films was much smaller than that in the secondary ion mass spectrometry depth profiling analysis and that in the international comparison of national metrology institutes for the quantification of Fe–Ni alloy films.

  2. Study of CuInSe{sub 2} thin films prepared by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, S.N.; Li, L.; Qiu, C.X.; Shih, I.; Champness, C.H. [Electrical Engineering Dept., McGill University, University Street, Montreal, QU (Canada)

    1995-07-30

    Thin films of p-type CuInSe{sub 2} prepared by a one-step electrodeposition method have been studied by constructing CdS/CuInSe{sub 2} junctions. After the electrodeposition, the CuInSe{sub 2} films were treated either in vacuum or in Ar. Cells of the form CdS (high {sigma})/CdS (low {sigma})/CuInSe{sub 2} were then fabricated for studying the electrodeposited films. Measurements were specifically carried out to determine the diffusion length of minority carriers in the p-type CuInSe{sub 2}. It was found that the minority carrier diffusion length in CuInSe{sub 2} films treated in Ar was generally greater than that for films treated in vacuum under similar conditions. A small area cell (active area 0.11 cm{sup 2}) with a conversion efficiency of about 7% (under 125 mW/cm{sup 2} illumination) has been fabricated

  3. Polycrystalline CuGaSe sub 2 thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ramakrishna Reddy, K.T.; Gopalaswamy, H.; Jayarama Reddy, P. (Sri Venkateswara Univ., Tirupati (IN). Dept. of Physics)

    1992-08-01

    Thin films of CuGaSe{sub 2} were prepared on Corning 7059 glass substrates by employing laser, flash and electron beam evaporation techniques. The physical properties of the films deposited with these techniques were studied and compared. Thin film heterojunction solar cells were fabricated using CdS, ZnCdS and ZnO as window materials and CuGaSe{sub 2} as an absorber. The current-voltage and capacitance-voltage characteristics of the junctions were studied to evaluate the junction parameters and photovoltaic properties. An efficiency of 4.9% was observed for a ZnCdS/CuGaSe{sub 2} heterojunction. An enhanced spectral response in the high-energy region was observed in the case of the ZnO/CuGaSe{sub 2} junction. (author).

  4. Quarternair CuGaSeTe and CuGa0.5In 0.5Te2 Thin Films Fabrication Using Flash Evaporation

    Directory of Open Access Journals (Sweden)

    A Harsono Soepardjo

    2010-10-01

    Full Text Available Quarternair materials CuGaSeTe and CuGa0.5In 0.5Te2 are the basic materials to solar cell fabrication. These materials have high absorption coefficients around 103 - 105 cm-1 and band gap energy in the range of 1-5 eV. In this research, the films were made by flash evaporation method using quarternair powder materials of CuGaSeTe and CuGa0.5In 0.5Te2 to adhere in a glass substrate. After the films were obtained, the properties of these films will be characterized optically and electrically. The lattice parameter of the films and the crystalline film structure were obtained using X-Ray Diffraction (XRD spectroscopy. The XRD results show that the quarternair CuGaSeTe and CuGa0.5In 0.5Te2 films have a chalcopyrite structure. The absorption coefficient and the  band gap energy of the films were calculated using transmittance and reflectance patterns that measured using UV-VIS Difractometer. The films composition can be detected by using the Energy Dispersive Spectroscopy (EDS, while the films resistivity, mobility and the majority carrier of the films were obtained from Hall Effect experiments.

  5. A study of electrostatically sprayed CuInS2 and ZnS thin films

    OpenAIRE

    2009-01-01

    The investigation of ternary compounds for the fabrication of thin film solar cells is well documented but the production of thin films by electrostatic spray deposition (ESD) is still limited. This thesis represents the first attempt to deposit photovoltaic thin films using this novel method. The lack of information regarding the deposition of CuInS2 by ESD required a statistical investigation of the effects of different deposition variables. To achieve this, a new image analysis...

  6. Superconducting properties of Tl-Ba-Ca-Cu-O films on silver substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dye, R.C.; Arendt, P.N.; Martin, J.A.; Hubbard, K.M.; Elliott, N.; Reeves, G. (Los Alamos National Lab., NM (United States))

    1991-03-01

    Films of Ba-Ca-Cu-O have been rf magnetron sputtered onto Consil 995 substrates. A post deposition anneal in an over pressure of Tl produces the superconducting 1212 and 2212 phases. Varying the annealing procedures changes the electrical properties of the final films dramatically. Dynamic impedance, an approach to the electrical characterization of these films on a conductive substrate is discussed and compared in this paper, with SEM, XRD and RBS measurements as a function of differing annealing protocols.

  7. Superconducting properties of Tl-Ba-Ca-Cu-O films on silver substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dye, R.C.; Arendt, P.N.; Martin, J.A.; Hubbard, K.M.; Elliott, N.; Reeves, G.

    1990-01-01

    Films of Ba-Ca-Cu-O have been rf magnetron sputtered onto Consil 995 substrates. A post deposition anneal in an over pressure of Tl produces the superconducting 1212 and 2212 phases. Varying the annealing procedures changes the electrical properties of the final films dramatically. Dynamic impedance, a novel approach to the electrical characterization of these films on a conductive substrate is discussed and compared with SEM, XRD and RBS measurements as a function of differing annealing protocols. 3 refs., 9 figs.

  8. Analysis of self-repair films on friction surface lubricated with nano-Cu additive

    Institute of Scientific and Technical Information of China (English)

    LIU Qian; XU Yi; SHI Pei-jing; YU He-long; XU Bin-shi

    2005-01-01

    The surface modified nanocopper particles were prepared with chemical reduction method. The wear test was carried out on a T-11 ball-on-plate friction and wear tester made in Poland. The material of the upper sample was GCr15 and the counterpart was AISI-1045 steel. The morphologies of the worn surfaces of the samples were observed by optical microscope and scanning electron microscope, while the element distributions on the worn surfaces were determined by means of electron microprobe analysis. As the results, a film mainly made of Cu is formed on the worn surface. The film on the surface of the still upper sample is thicker than that formed on the revolving coun terpart. At the edge of the groove of the worn surface made by the milling before test there is Cu element observed obviously, but there is not any Cu element in the bottom of the groove. A possible action mechanism of the film is suggested. The friction movement can induce reactivity of the metal and continuously produce activation surface. It benefits the film formed by nano-Cu in lubricant on the worn surface. Hardness and modulus of nano-Cu films were successfully measured and analyzed by the nanoindentation instrument. The results show that the hardness and modulus of the films are lower than those of the initial surface.

  9. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhuo Shiyi; Xiong Yuying; Gu Min, E-mail: xiongyy@scnu.edu.c [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China)

    2009-05-01

    ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn{sub 0.99}Cu{sub 0.01}O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1+. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

  10. Nonlinear optical properties of laser deposited CuO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Aiping [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Guang, E-mail: gyang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Long Hua; Li Fang; Li Yuhua [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Lu Peixiang, E-mail: lupeixiang@mail.hust.edu.c [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2009-06-01

    In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n{sub 2} = - 3.96 x 10{sup -17} m{sup 2}/W, and nonlinear absorption coefficient, {beta} = - 1.69 x 10{sup -10} m/W, respectively.

  11. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Zhuo Shiyi; Xiong Yuying; Gu Min

    2009-01-01

    ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01 O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

  12. Electrical properties of Y-Ba-Na-Cu-O high Tc superconductors thin films

    Energy Technology Data Exchange (ETDEWEB)

    Verdyan, A. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Lapsker, I. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Azoulay, J. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel))

    1993-04-20

    Y-Ba-Na-Cu-O high Tc superconductors thin films deposited on MgO substrate by resistive evaporation technique were found to have improved electrical properties as compared to pure Y-Ba-Cu-O thin films similarly prepared. A simple conventional inexpensive vacuum system housing a single resistively tungsten heated source was used for the deposition. Pulverized mixture of Y, BaF[sub 2], NaF and Cu in the appropriate atomic proportion was evaporated onto the substrates whose temperature was held constant at 400 C during the evaporation. In situ heat treatment has been carried out at 700 C under oxygen partial pressure of 7 pa. The films thus obtained were found to have the normal superconductors orthorhombic phase at room temperature without any further ex situ heat treatment. The films were characterized and analyzed by X-ray diffraction auger election spectroscopy and four point dc electrical measurements. (orig.)

  13. Electrical properties of Y-Ba-Na-Cu-O high Tc superconductors thin films

    Science.gov (United States)

    Verdyan, A.; Lapsker, I.; Azoulay, J.; Sackler, Raymond; Sackler, Beverly

    1993-04-01

    Y-Ba-Na-Cu-O high Tc superconductors thin films deposited on MgO substrate by resistive evaporation technique were found to have improved electrical properties as compared to pure Y-Ba-Cu-O thin films similarly prepared. A simple conventional inexpensive vacuum system housing a single resistively tungsten heated source was used for the deposition. Pulverized mixture of Y, BaF 2, NaF and Cu in the appropriate atomic proportion was evaporated onto the substrates whose temperature was held constant at 400°C during the evaporation. In situ heat treatment has been carried out at 700°C under oxygen partial pressure of 7 pa. The films thus obtained were found to have the normal superconductors orthorhombic phase at room temperature without any further ex situ heat treatment. The films were characterized and analyzed by x-ray diffraction auger electron spectroscopy and four point dc electrical measurements.

  14. Effect of [Cu]/[In] ratio on properties of CuInS 2 thin films prepared by successive ionic layer absorption and reaction method

    Science.gov (United States)

    Shi, Yong; Jin, Zhengguo; Li, Chunyan; An, Hesong; Qiu, Jijun

    2006-03-01

    CuInS 2 ternary films were prepared by a soft solution processing, i.e. successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and heat-treated under Ar atmosphere at 500 °C for 1 h. CuCl 2 and InCl 3 mixed solutions with different ionic ratios ([Cu]/[In]) were used as cation precursor and Na 2S as the anion precursor. The effect of the [Cu]/[In] ratio in precursor solution on the structural, chemical stoichiometry, topographical, optical and electrical properties of CuInS 2 thin films was investigated. XPS results demonstrated that stoichiometric CuInS 2 film can be obtained by adjusting [Cu]/[In] ratios in solution. Chalcopyrite structure of the film was confirmed by XRD analysis. The near stoichiometric CuInS 2 film has the optical band gap Eg of 1.45 and resistivity decreased with increase of [Cu]/[In] ratios.

  15. Porous anodic film formation on an Al-3.5wt% Cu alloy

    Energy Technology Data Exchange (ETDEWEB)

    Paez, M. A.; Skeldon, P.; Thompson, G. E.; Saez, M.; Bustos, O.; Monsalve, A.

    2003-07-01

    The morphological development of porous anodic films in the initial stages is examined during anodizing an Al-3,5 wt% Cu alloy in phosphoric acid. Using transmission electron microscopy a sequence of ultramicrotomed anodic sections reveals the dynamic evolution of numerous features in the thickening film in the initial stages of anodizing. The morphological changes in the anodic oxides in the initial stages of its formation appears related to the formation of bubbles during film growth. From Rutherford backscattering spectroscopy (RBS) analysis of the film, the formation of the bubbles is associated with the enrichment of copper in the alloy due to growth of the anodic oxide. On the other hand, during constant current anodizing of Al-Cu in phosphoric acid, the current efficiency is considerably less than that for anodizing super pure aluminium under similar conditions. >From the contrasting results between the charge consumed calculated from RBS and the real charge consumed during anodizing, oxygen gas bubbles generation and copper oxidation seem to be of less importance on the low efficiency for film formation. It is apparent that the main cause of losing efficiency for film growth on Al-Cu is associated with generation of oxygen ar residual second phase, with the development of stresses in the film and, the consequence of these effects on film cracking during film growth. (Author) 10 refs.

  16. Growth of Cu2ZnSnSe4 thin films by selenization of sputtered single-layered Cu-Zn-Sn metallic precursors from a Cu-Zn-Sn alloy target

    Science.gov (United States)

    Kim, Kyoo-Ho; Amal, Ikhlasul

    2011-09-01

    Cu2ZnSnSe4 (CZTSe) thin films were prepared by the simple process of selenization of single-layered metallic Cu-Zn-Sn precursors. These metallic precursors were deposited by radio frequency magnetron sputtering of a ternary Cu-Zn-Sn alloy target. Successive selenization was performed at various temperatures between 250°C and 500°C for 30 min. X-ray diffraction and Raman analysis showed that a single phase of the CZTSe compound can be obtained by selenization at 400°C, while increasing the selenization temperature to 500°C improves the grain size and crystal quality. The direct optical band gap of CZTSe films was calculated to be 1.06 eV to 1.09 eV with a high absorption coefficient on the order of 104 cm-1 for samples selenized at 400°C to 500°C. The obtained films are p-type semiconductors with bulk carrier concentrations of 2.41 to 7.96 × 1018 cm3, mobilities of 1.30 cm2 V-1 s-1 to 9.27 cm2 V-1 s-1, and resistivities of 0.20 Ωcm to 1.95 Ωcm.

  17. Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

    Energy Technology Data Exchange (ETDEWEB)

    Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.; Shluger, AL

    2015-10-22

    Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate that this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.

  18. The Properties of Sprayed Nanostructured P-Type CuI Films for Dye-Sensitized Solar Cells Application

    Directory of Open Access Journals (Sweden)

    M. N. Amalina

    2012-01-01

    Full Text Available In our experiments, we provide a new approach for depositing CuI (inorganic compound thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with substrate temperature constant at 50°C during the deposition process. The result shows that the CuI thin film properties strongly depend on its precursor concentration. The structural properties were characterized by XRD with strong (111 orientation shows for all the CuI thin films. FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirms the existence of Cu:I in the films. The nanostructured CuI will improve the penetration of p-type between the mesoporous matrix of TiO2 thin film. Promising conductivity value of about 10° S cm−1 was obtained for CuI thin films deposited by this new deposition method. Low transmittance of below 50% was observed for all CuI thin films. The band gap energy obtained here was between 2.82 eV and 2.92 eV which is much smaller than the reported band gap which is 3.1 eV.

  19. Preparation and characterization of epitaxial thin films and patterned nanostructures of Ni/Cu and Fe/Cu

    OpenAIRE

    Corredor, Edna C.

    2012-01-01

    El objetivo del trabajo realizado en esta tesis titulada: Preparation and magnetic characterization of epitaxial thin films and patterned nanostructures of Ni/Cu and Fe/Cu es establecer relaciones entre las propiedades magnéticas de sistemas nanoestructurados y sus dimensiones físicas o factores estructurales que aparecen al reducirse la dimensión espacial a dos, en el caso de películas delgadas, y a una en el caso de elementos patronados. Los sistemas objeto de estudio se caracterizan por se...

  20. Preparation and characterization of epitaxial thin films and patterned nanostructures of Ni/Cu and Fe/Cu

    OpenAIRE

    Corredor Vega, Edna Consuelo; Ciria Remacha, Miguel Ángel; Arnaudas Pontaque, José Ignacio

    2013-01-01

    El objetivo del trabajo realizado en esta tesis titulada: Preparation and magnetic characterization of epitaxial thin films and patterned nanostructures of Ni/Cu and Fe/Cu es establecer relaciones entre las propiedades magnéticas de sistemas nanoestructurados y sus dimensiones físicas o factores estructurales que aparecen al reducirse la dimensión espacial a dos, en el caso de películas delgadas, y a una en el caso de elementos patronados. Los sistemas objeto de estudio se caracterizan por se...

  1. Ferromagnetic resonance in 80NiFe/Cu/Co multilayer films

    Science.gov (United States)

    Koizumi, H.; Ando, Y.; Miyazaki, T.

    1996-12-01

    Trilayers and multilayers containing ferromagnetic 80NiFe,Co layers separated by nonmagnetic Cu layers were fabricated using the magnetron sputtering method. For 80NiFe(60 Å)/Cu (d Cu)/ Co(60 Å) trilayer films, the MR ratio and the exchange coupling strength oscillated with increasing dCu. For 80NiFe(60 Å)/Cu (d Cu)/ Co(60 Å)/Cu (d Cu)/ 80NiFe(60 Å) multilayer films, however, the exchange coupling between the bottom 80NiFe and the Co layers oscillated, while that between the Co and the top 80NiFe layers decreased monotonously with increasing dCu. Consequently, antiferromagnetic exchange coupling was not achieved between the Co(60 Å) and the top magnetic layer. The reason for the nonexistence of antiferromagnetic exchange coupling is discussed by taking into account the rougher surface of the Co(60 Å) layer caused by the growth of the different crystalline structures.

  2. In-situ deposition and processing of YBa2Cu3O(7-x) films and multilayers for optoelectronic devices

    Science.gov (United States)

    Villegier, J. C.; Moriceau, H.; Boucher, H.; di Cioccio, L.; Chicault, R.

    1991-03-01

    In situ direct deposition at about 700 C of thin YBa2Cu3O(7-x) superconductive films and multilayers has been done by three techniques using stoichiometric YBa2Cu3O(7-x) sintered targets. Excimer laser ablation in a dc magnetron system with hollow and planar targets leads to 0.5-, 1.2-, and 2.5-in diameter uniformly superconductive layers under static conditions. High critical current densities associated with low resistivity and good epitaxial behavior are achieved on top of MgO, SrTiO3, LaAlO3, and YSZ single-crystal wafers. High-quality c-oriented films are routinely obtained by means of a dc magnetron on large sapphire substrates covered by a YSZ RF sputtered buffer layer. The infrared properties of such films have been checked at 1.15-micron wavelength. In order to achieve active devices, small YBa2Cu3O7-YSZ-Ag tunnel junctions and arrays have been successfully patterned in the superconductor/insulator/normal-metal trilayers using SNOP (selective niobium overlap process).

  3. AlCu alloy films prepared by the thermal diffusion technique

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, CP 97310, Merida Yucatan (Mexico); Corona, J.E.; Sosa, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, CP 97310, Merida Yucatan (Mexico)

    2010-07-15

    100-nm thick films of Al{sub 1-x}Cu{sub x} alloys were prepared on glass substrates by thermal diffusion technique. The Cu atomic concentration was varied from 10% to 90%. Alloys were prepared at different temperatures into a vacuum oven with Argon atmosphere. Two thermal processes were used: i) heating the film at 400 deg. C in a single step, and ii) heating the films in sequential steps at 100, 200, 300 and 400 deg. C. Morphology, electrical resistivity, and crystalline orientation of the alloys were studied. The electrical resistivity and surface roughness of the alloys were found to depend strongly on the atomic composition and the diffusion temperature. However, we did not find differences between samples prepared under the two thermal processes. Alloys prepared with x = 0.6 and x = 0.1-0.3 as Cu at concentration exhibited values on electrical resistivity and surface roughness lower than pure Al. Different phases of the Al{sub 1} {sub -} {sub x}Cu{sub x} films were observed as a function of Cu concentration showing a good agreement with the AlCu phase diagram.

  4. Synthesis of single phase of CuTl-1234 thin films

    CERN Document Server

    Khan, N A; Ishida, K; Tateai, F; Kojima, T; Terada, N; Ihara, H

    1999-01-01

    Thin films of CuTl-1234 superconductor have been prepared for the first time using an amorphous phase epitaxy method (APE). In this method, an amorphous phase is sputtered from a target of stoichiometric composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub x/. Thin films on the SrTiO/sub 3/ substrate after the thallium treatment are biaxially oriented. The XRD reflected a predominant single phase with c-axis 18.7 AA and pole figure measurements of (103) reflections showed a-axis oriented films with Delta phi =0.8 degrees . Resistivity measurements showed T/sub c/=113 K and preliminary J/sub c/ measurements manifested a current density of 1.0*10/sup 6/ A/cm (77 K, 0 T). The composition of films after EDX measurements is Cu /sub 0.3/Tl/sub 0.7/CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. (8 refs).

  5. Galvanic synthesis of Cu2-XSe thin films and their photocatalytic and thermoelectric properties

    Science.gov (United States)

    Ghosh, Amrita; Kulsi, Chiranjit; Banerjee, Dipali; Mondal, Anup

    2016-04-01

    Cu2-XSe thin film with cubic berzelianite phase was prepared by a simple, low-cost two electrode electrochemical technique and the photocatalytic and thermoelectric properties of the thin films were investigated. The results showed that Cu2-XSe crystallized in the cubic berzelianite phase and found to possess both direct and indirect band gaps of 2.9 and 1.05 eV respectively, covering almost the entire range of solar-spectrum. The photocatalytic discoloration of aqueous methylene blue (MB) and rose-bengal (RB) dyes over Cu2-XSe thin films were investigated under visible light irradiation. Cu2-XSe thin films showed higher catalytic activity for MB compared to RB in presence of H2O2. The photocatalytic discoloration followed first-order reaction kinetics. Complete removal of aqueous MB was realized after visible light irradiation for 150 min with Cu2-XSe thin film catalyst in presence of H2O2. Thermoelectric performances through power factor and figure of merit have been evaluated. Carrier concentration obtained from thermoelectric power was used to evaluate the mobility of carriers from electrical conductivity measurement.

  6. Oscillations of composition near the external surface of Y-Ba-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bakunin, O. M.; Klotsman, S. M.; Matveev, S. A.; Stepanov, K. A.

    1989-07-03

    An Auger electron spectroscopy study has been made of the depth profiles of films of Y-Ba-Cu-O compounds. The films were produced by electron beam and ion plasma sputtering onto various substrate types. The specimens were annealed in air at temperatures ranging between 450 and 900 /degree/C. The effective diffusion coefficients for the film and substrate constituents have been estimated. The depth profiles of films annealed at 600 /degree/C reveal composition oscillations in the region adjacent to the surface. These composition oscillations are assumed to arise from the phase transformations that occur at 600 /degree/C in films of the Y-Ba-Cu-O system.

  7. Extraordinary Hall effect on Fe-rich amorphous thin films and Fe-rich/Cu multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Michea, S. [Universidad de Santiago de Chile, Avda. Ecuador, 3493, Estacion Central, Santiago (Chile); Denardin, J.C., E-mail: juliano.denardin@usach.cl [Universidad de Santiago de Chile, Avda. Ecuador, 3493, Estacion Central, Santiago (Chile); Gamino, M.; Dorneles, L.S. [Departamento de Fisica, Universidade Federal de Santa Maria, Santa Maria 97105-900, RS (Brazil); Correa, M.A. [Departamento de Fisica Teorica e Experimental, Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Seca, 59072-970 - Natal, RN - Brazil (Brazil)

    2012-08-15

    In this study we investigated the magnetic and transport properties of thin Fe-rich amorphous films and Fe-rich/Cu multilayers. We compared the extraordinary Hall effect in these two types of samples and discussed it in terms of thickness and sample structure. The thicker films exhibited a strong in-plane magnetic anisotropy, and by decreasing film thickness both saturated Hall resistivity and Hall sensitivity increase. A Hall resistivity value of 20 {mu} Ohm-Sign cm is observed in 100 nm thick Fe-rich films at 12 K and a sensitivity of 1.3 Ohm-Sign /T is obtained at room temperature. Electrical conductance increases and Hall resistivity decreases when the films are sandwiched with Cu.

  8. Fabrication and microwave properties of Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sobolewski, R.; Konopka, J.; Kula, W.; Gierlowski, P.; Konopka, A.; Lewandowski, S.J.

    1989-03-01

    The authors report their studies on the interaction of Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O thin films with microwaves. The films were prepared on cubic zirconia and magnesium oxide substrates using a modified spray deposition technique. The tested films were about 1-3 /mu/m thick and exhibited good superconducting properties (e.g. for YBCO-on zirconia films the 10-90% transition width was 2 K, and the zero resistance was reached at 89 K). Several test structures have been designed by spraying a mixture of nitrate precursors on heated substrates through very thin stencil masks. The supercurrent dependence on millimeter wavelength microwave illumination was measured, and microwave detection and mixing experiments were performed. The films of both materials exhibited proper ties characteristic for granular superconductors, with Josephson-type coupling at the intergrain connections. The studies also demonstrated that these materials can be successfully used as very sensitive millimeter radiation detectors operational at liquid nitrogen temperatures.

  9. Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-08-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

  10. Effects of chemical etching and functionalization times on the properties of Cu/polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kisoo; Hwang, Soomin; Lee, Changmin; Kim, Won; Lee, Seungmuk; Park, Geunchul; Jung, Seungboo; Joo, Jinho [Sungkyunkwan University, Suwon (Korea, Republic of); Lim, Junhyung [Stanford University, Stanford, CA (United States)

    2010-12-15

    We fabricated flexible Cu/Polyimide (PI) films by electroless- and electro-Cu plating on surface modified PI via chemical etching and functionalization, and investigated the effects of the modification time on the contact angle, surface energy and morphology, Pd catalyst amount on PI, and resultant peel strength between Cu/PI layers. Chemical etching and successive functionalization were performed on PI surfaces for 0 - 10 min, followed by electroless- and electro-Cu plating. Chemical etching effectively modified the PI surface from a hydrophobic to a hydrophilic state. In addition, chemical functionalization significantly increased the amount of Pd absorption on PI, which consequently enhanced the peel strength between Cu/PI. The peel strength of the resulting Cu/PI film processed by both chemical etching and functionalization for 5 min increased to 5.08 N/cm, which was 4.2 and 2.8 times higher than films processed with functionalization and etching alone, respectively. The highest strength that was achieved was a result of the combined effects of the increased work of adhesion and the increased Pd amount for both treatments; however, the amount of Pd was likely to be the more critical factor for the high level of adhesion between Cu/PI, rather than the work of adhesion.

  11. Structural and magnetic properties of Cu-alloyed FePd films

    Energy Technology Data Exchange (ETDEWEB)

    Polit, A., E-mail: aleksander.polit@gmail.com [The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-348 Krakow (Poland); Makarov, D., E-mail: d.makarov@ifw-dresden.de [Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz (Germany); Brombacher, C., E-mail: Christoph.Brombacher@vacuumschmelze.com [Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz (Germany); Krupinski, M., E-mail: michal.krupinski@ifj.edu.pl [The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-348 Krakow (Poland); Perzanowski, M., E-mail: marcin.perzanowski@ifj.edu.pl [The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-348 Krakow (Poland); Zabila, Y., E-mail: yevhen.zabila@ifj.edu.pl [The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-348 Krakow (Poland); Albrecht, M., E-mail: manfred.albrecht@physik.uni-augsburg.de [Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz (Germany); Marszałek, M., E-mail: marta.marszalek@ifj.edu.pl [The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-348 Krakow (Poland)

    2015-05-01

    Multilayer films [Cu(d Å)/Fe(9 Å)/Pd(11 Å)]{sub 5} were deposited at room temperature on Si(001)/SiO{sub 2}(400 nm) substrates. In order to induce chemical L1{sub 0} ordering, the as-deposited samples were post-annealed by rapid thermal annealing (RTA) at 600 °C for 90 s followed additionally by heating in ultra-high vacuum (UHV) at 700 °C up to several hours. In this study the impact of post-annealing on the structural and magnetic properties of FePdCu alloy films in dependence on the Cu content was investigated. It was found that the addition of Cu to the FePd alloy has a strong influence on the chemical ordering process and the (001) texture formation. After the RTA treatment only an isotropic distribution of the easy axis of magnetization with coercive fields in the range of a few hundred mT was observed. In contrast, samples which were additionally heated for 1 h at 700 °C revealed an out-of-plane easy axis of magnetization with an effective magnetic anisotropy of about 2×10{sup 5} J/m{sup 3} for the sample containing 10 at% of Cu. - Highlights: • Fabrication by two-step annealing of FePdCu thin alloy films. • The impact of post-annealing on the structural and magnetic properties of FePdCu alloy films. • The addition of Cu to the FePd alloy has a strong influence on the chemical ordering process and the (001) texture formation. • Importance of texture in polycrystalline L1{sub 0} FePdCu alloy for perpendicular magnetic anisotropy.

  12. Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films

    OpenAIRE

    S. Kaleemulla; N. Madhusudhana Rao; N. Sai Krishna; M. Kuppan; M. Rigana Begam; M. Shobana

    2014-01-01

    Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV.

  13. Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

    Institute of Scientific and Technical Information of China (English)

    WANG Yanlai; NIE Hongbo; GUO Shiju

    2010-01-01

    The CuInSe2 compound was prepared by selenization of Cu-In precursor,which was ultrasonic electrodeposited at constant current.CuInSe2films were compacted to improve surface morphology.The films were characterized by X-ray diffractometry(XRD),scanning electron microscopy(SEM),and energy dispersive spectroscopy(EDS).It is indicated that ideal stoichiometric CuInSe2 films can be obtained by the selanization of Cu-In precursor deposited at a current density of 20 mA/cm2.Single-phase CuInSe2 is formed in the selenization process,and it exhibits preferred orientation along the(112)plane.The CuInSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60℃.

  14. Ag- and Cu-doped multifunctional bioactive nanostructured TiCaPCON films

    Energy Technology Data Exchange (ETDEWEB)

    Shtansky, D.V., E-mail: shtansky@shs.misis.ru [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Batenina, I.V.; Kiryukhantsev-Korneev, Ph.V.; Sheveyko, A.N.; Kuptsov, K.A. [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Zhitnyak, I.Y.; Anisimova, N.Yu.; Gloushankova, N.A. [N.N. Blokhin Russian Cancer Research Center of RAMS, Kashirskoe shosse 24, Moscow 115478 (Russian Federation)

    2013-11-15

    A key property of multicomponent bioactive nanostructured Ti(C,N)-based films doped with Ca, P, and O (TiCaPCON) that can be improved further is their antibacterial effect that should be achieved without compromising the implant bioactivity and biocompatibility. The present work is focused on the study of structure, chemical, mechanical, tribological, and biological properties of Ag- and Cu-doped TiCaPCON films. The films with Ag (0.4–4 at.%) and Cu (13 at.%) contents were obtained by simultaneous sputtering of a TiC{sub 0.5}–Ca{sub 3}(PO{sub 4}){sub 2} target and either an Ag or a Cu target. The film structure was studied using X-ray diffraction, transmission and scanning electron microscopy, energy dispersive X-ray spectroscopy, glow discharge optical emission spectroscopy, and Raman-shift and IR spectroscopy. The films were characterized in terms of their hardness, elastic modulus, dynamic impact resistance, friction coefficient and wear rate (both in air and normal saline), surface wettability, electrochemical behavior and Ag or Cu ion release in normal saline. Particular attention was paid to the influence of inorganic bactericides (Ag and Cu ions) on the bactericidal activity against unicellular yeast fungus Saccharomyces cerevisiae and gram-positive bacteria Lactobacillus acidophilus, as well as on the attachment, spreading, actin cytoskeleton organization, focal adhesions, and early stages of osteoblastic cell differentiation. The obtained results show that the Ag-doped films are more suitable for the protection of metallic surfaces against bacterial infection compared with their Cu-doped counterpart. In particular, an excellent combination of mechanical, tribological, and biological properties makes Ag-doped TiCaPCON film with 1.2 at.% of Ag very attractive material for bioengineering and modification of load-bearing metal implant surfaces.

  15. Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer

    Science.gov (United States)

    Shan, P. C.; ćelik-Butler, Z.; Butler, D. P.; Jahanzeb, A.; Travers, C. M.; Kula, W.; Sobolewski, Roman

    1996-12-01

    We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection. For this study, four different structures were built with different types of buffer layers: YBaCuO on a Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. These films were all amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa2Cu3O6.5 and YBa2Cu3O6.3 thin films on a LaAlO3 substrate were included into the study. All six films exhibited semiconducting resistance versus temperature characteristics. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance (TCR) and the inherent noise characteristics of the temperature sensing element. The room temperature TCRs for all four amorphous films were greater than 2.5% K-1. The highest TCR of 4.02% K-1 was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO2 layer. The TCR of the tetragonal films, on the other hand, remained 2% K-1 or less in the same temperature range. Noise measurements performed in the 1-100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. The Johnson and 1/f regions were clearly identified in the noise spectrum. From TCR and noise measurements, we estimated the amorphous semiconducting YBaCuO bolometers would have a responsivity as high as 3.8×105 V/W and a detectivity as high as 1.6×109 cm Hz1/2/W for 1 μA bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure.

  16. Ag- and Cu-doped multifunctional bioactive nanostructured TiCaPCON films

    Science.gov (United States)

    Shtansky, D. V.; Batenina, I. V.; Kiryukhantsev-Korneev, Ph. V.; Sheveyko, A. N.; Kuptsov, K. A.; Zhitnyak, I. Y.; Anisimova, N. Yu.; Gloushankova, N. A.

    2013-11-01

    A key property of multicomponent bioactive nanostructured Ti(C,N)-based films doped with Ca, P, and O (TiCaPCON) that can be improved further is their antibacterial effect that should be achieved without compromising the implant bioactivity and biocompatibility. The present work is focused on the study of structure, chemical, mechanical, tribological, and biological properties of Ag- and Cu-doped TiCaPCON films. The films with Ag (0.4-4 at.%) and Cu (13 at.%) contents were obtained by simultaneous sputtering of a TiC0.5-Ca3(PO4)2 target and either an Ag or a Cu target. The film structure was studied using X-ray diffraction, transmission and scanning electron microscopy, energy dispersive X-ray spectroscopy, glow discharge optical emission spectroscopy, and Raman-shift and IR spectroscopy. The films were characterized in terms of their hardness, elastic modulus, dynamic impact resistance, friction coefficient and wear rate (both in air and normal saline), surface wettability, electrochemical behavior and Ag or Cu ion release in normal saline. Particular attention was paid to the influence of inorganic bactericides (Ag and Cu ions) on the bactericidal activity against unicellular yeast fungus Saccharomyces cerevisiae and gram-positive bacteria Lactobacillus acidophilus, as well as on the attachment, spreading, actin cytoskeleton organization, focal adhesions, and early stages of osteoblastic cell differentiation. The obtained results show that the Ag-doped films are more suitable for the protection of metallic surfaces against bacterial infection compared with their Cu-doped counterpart. In particular, an excellent combination of mechanical, tribological, and biological properties makes Ag-doped TiCaPCON film with 1.2 at.% of Ag very attractive material for bioengineering and modification of load-bearing metal implant surfaces.

  17. Superconducting thin films of Tl 2Ca 2Ba 2Cu 3O y and Tl 2CaBa 2Cu 2O y

    Science.gov (United States)

    Ginley, D. S.; Kwak, J. F.; Hellmer, R. P.; Baughman, R. J.; Venturini, E. L.; Mitchell, M. A.; Morosin, B.

    1988-11-01

    We present techniques for preparing unoriented polycrystalline and epitaxial superconducting thin films of the Tl 2CaBa 2Cu 2O y and Tl 2Ca 2Ba 2Cu 3O y phases on a wide variety of substrates. The crucial steps determining the properties of the films are shown to be the air sintering and oxygen annealing following the initial metal deposition by electron beam evaporation under a slight oxygen overpressure. A sintered Tl-Ca-Ba-Cu-O pellet is employed as a source of excess Tl during sintering and annealing of the thin film. The Tl concentration in the final films controls the nature of the intergrain connections. The films are characterized by their structural, chemical, magnetic and transport properties. Zero resistance typically occurs at 97 K for Tl 2CaBa 2Cu 2O and at 106 K for Tl 2Ca 2Ba 2Cu 3O y. Transport critical currents of up to 110 000 A/cm 2 have been obtained at 77 K for unoriented Tl 2CaBa 2Cu 2O y, up to 160 000 A/cm 2 for epitaxial Tl 2Ca 2Ba 2Cu 3O y and up to 240 000 A/cm 2 for unoriented Tl 2Ca 2Cu 3O y films with little field dependence of the critical current observed.

  18. Synthesis and optical properties of CuInS{sub 2} thin films prepared by sulfurization of electrodeposited Cu-In layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu-Cheng; Wu, Po-Feng [Program in Electrical and Communications Engineering, Feng Chia University, Seatwen, Taichung (China); Shi, Jen-Bin; Chen, Chih-Jung; Yang, Shui-Yuang [Department of Electronic Engineering, Feng Chia University, Seatwen, Taichung (China)

    2012-09-15

    The chalcopyrite CuInS{sub 2} thin film was fabricated at 500 C for 2 h by sulfurization of Cu-In layers (as precursors) that were sulfurized in a glass tube with pure sulfur powder. The structural, morphological, and optical properties of CuInS{sub 2} thin films are characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Visible/NIR spectrophotometer. The study of UV/Visible/NIR absorption shows the band gap energy value of CuInS{sub 2} thin films is 1.5 eV. The XRD pattern shows the film is pure CuInS{sub 2}; no other peaks, such as CuS or CuIn{sub 5}S{sub 8} were observed. Furthermore, the surface of the CuInS{sub 2} film is compact characterized by FE-SEM, which also shows the disappearance of CuS on the surface at 500 C. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.

  20. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    WANG XiShu; LI Ying; MENG XiangKang

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface.However,the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size,interface and stress state on the failure behavior of thin film-substrate structure.Based on the scanning electron microscope(SEM)in-situ investigation on the failure models of the Cu thin film-substrata structure and the nano scratched testing results,the failure stresses in different thicknesses of the Cu film-substrate were characterized,which were compared and confirmed by other methods,such as Stoney formula and other empiric equations.These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods.The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film.Therefore,the novel estimating method of failure stress assists people to understand the critical interracial strength and to set up the failure criterion of thin film-substrate structure.

  1. Positron annihilation study on CuInSe{sub 2} solar cell thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lijuan [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Wang, Tao [Institute of Fluid Physics, CAEP, P.O. Box 919-106, Mianyang 621900 (China); Li, Ji [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Hao, Yingping; Liu, Jiandang [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Peng [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Cheng, Bin [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Zhongwei [Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Wang, Baoyi [Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yuquan Lu, Beijing 100049 (China); Ye, Bangjiao, E-mail: bjye@ustc.edu.cn [Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)

    2012-12-15

    Positron annihilation spectroscopy has been used to investigate CuInSe{sub 2} solar cell thin films. The films were grown on Mo-coated soda lime glass substrates by the electrochemical deposition processing technique. As-grown samples are found to contain large concentration of vacancy defects. The selenium (Se) atmosphere and sulfur (S) atmosphere annealing of as-grown samples at 800 K can dramatically reduce the number of vacancy defects and the film becomes crystalline. In addition, a defect layer of about 50 nm thickness was observed at the surface of the CuInSe{sub 2} thin film. This layer results from the electrochemical deposition method, but the defect concentration in the defect layer can be greatly reduced by annealing in selenium atmosphere. The Doppler broadening line shape parameter correlation plot provided evidence that the positron trapping defect states where in three samples. - Highlights: Black-Right-Pointing-Pointer As-grown CuInSe{sub 2} thin films contain large concentration of defects. Black-Right-Pointing-Pointer A defect layer of about 50 nm exists in the CuInSe{sub 2} thin film surface. Black-Right-Pointing-Pointer The defect concentration in the defect layer can be greatly reduced.

  2. Three dimensional web-like fibrous CuInS{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Hyun [School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Min-woo [School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Green School, Korea University, Seoul, 136-713 (Korea, Republic of); Kim, Hayong [School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Al-Deyab, Salem S. [Petrochemicals Research Chair, Dept. of Chem., King Saud University, Riyadh 11451 (Saudi Arabia); James, Scott C. [Depts of Geology and Mechanical Engineering, Baylor University, Waco TX 76798-2534 (United States); Ahn, SeJin, E-mail: swisstel@kier.re.kr [Photovoltaic Laboratory, Korea Institute of Energy Research, 71-2 Jangdong, YuseongGu, DaeJeon 305-543 (Korea, Republic of); Yoon, Sam S., E-mail: skyoon@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2015-10-01

    Graphical abstract: - Highlights: • Electrospun nanofibers were used to construct a 3D CuInS{sub 2} solar cell with enhanced surface area. • SEM images showed the 3D web-like, fibrous structure of the film. • The surface area had nearly doubled after incorporating the 3D nanostructure. - Abstract: To ensure effective collection of photo-generated minority electrons in a CuInS{sub 2} thin film solar cell, a three-dimensional nanostructure was constructed by electrospinning a copper-indium solution precursor onto a molybdenum substrate. The electrospun nanofibers adhered onto the underlying layers before undergoing sulfurization at 500 °C to produce a three-dimensional web-like fibrous CuInS{sub 2} film. This fibrous film was characterized by scanning electron microscopy, X-ray diffraction, and Auger electron spectroscopy, thereby characterizing the 3D fibrous nanostructure of the CuInS{sub 2} film. This 3D structure could lead to next-generation solar cells optimized for maximal charge separation to enhance photovoltaic efficiency of solution-processed thin film solar cells.

  3. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Sathe, Vasant; Ganesan, V. [UGC-DAE Consortium for Scientific Research, Indore 452001 (India)

    2014-12-07

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  4. Research on Y-Ba-Cu-O superconducting thin films at liquid nitrogen temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Li Yuan; Yang Senzu; Ji Zhengming; Sun Zhijian; Jing Dong; Wu Peiheng; Zhang Shiyan; Wang Hao; Zhou Ningsheng; Fan Depei; and others

    1988-12-01

    The Y-Ba-Cu-O superconducting thin films on several kinds of substrates of single crystal ZrO/sub 2/, YSZ and polycrystalline SrTiO/sub 3/ have been successfully prepared by mean of /ital rf/ reactive magnetron sputtering. The zero resistance temperature obtained is 81 K. The thickness of the films is about 1--2 ..mu..m. In this paper the composition of the films, the substrates, /ital R/-/ital T/ curves, X-ray diffraction patterns and the heat treatment process of the films are described.

  5. Self-organization of Pb thin films on Cu(111) induced by quantum size effects

    Science.gov (United States)

    Dil, J. H.; Kim, J. W.; Gokhale, S.; Tallarida, M.; Horn, K.

    2004-07-01

    Electron confinement in thin films of Pb on Cu(111) leads to the formation of quantum well states, formed out of the upper valence band of Pb. Their evolution as a function of film thickness is characterized in angle-resolved photoemission and can be interpreted in terms of a straightforward quantum well model. This permits an identification of film growth mode at low temperatures. Bringing the films into thermal equilibrium by annealing induces strong changes in the spectra. Their interpretation demonstrates that specific “magic” layers are preferred because of total energy minimization induced by the arrangement of quantum well states with respect to the Fermi level.

  6. Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films

    Science.gov (United States)

    Bär, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J. D.; Shafarman, W. N.; Heske, C.

    2008-12-01

    The surface composition of Cu(In,Ga)(S,Se)2 ("CIGSSe") thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties. We used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (Eg) in CIG(S)Se thin films. We find an increasing Eg with decreasing information depth, indicating the formation of a surface region with significantly higher Eg. This Eg-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.

  7. Novel Ballistic Processing of Sn-0.7Cu Thick Films

    Science.gov (United States)

    Cavero, D.; Stewart, K.; Morsi, K.

    2016-11-01

    The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

  8. The saturable absorption and reverse saturable absorption properties of Cu doped zinc oxide thin films

    Science.gov (United States)

    Yao, Cheng-Bao; Wen, Xin; Li, Qiang-Hua; Yan, Xiao-Yan; Li, Jin; Zhang, Ke-Xin; Sun, Wen-Jun; Bai, Li-Na; Yang, Shou-Bin

    2017-03-01

    We present the structure and nonlinear absorption (NLA) properties of Cu-doped ZnO (CZO) films prepared by magnetron sputtering. The films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The results show that the CZO films can maintain a wurtzite structure. Furthermore, the open-aperture (OA) Z-scan measurements of the film were carried out by nanosecond laser pulse. A transition from saturable absorption (SA) to reverse saturable absorption (RSA) was observed as the excitation intensity increasing. With good excellent nonlinear optical coefficient, the samples were expected to be the potential applications in optical devices.

  9. Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bar, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J. D.; Shafarman, W.; Heske, C.

    2008-06-24

    The surface composition of Cu(In,Ga)(S,Se)2 (?CIGSSe?) thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties.We have used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (Eg) in CIG(S)Se thin films. We find an increasing Eg with decreasing information depth, indicating the formation of a surface region with significantly higher Eg. This Eg-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.

  10. Catalytic and photoelectrochemical performances of Cu-Zn-Sn-Se thin films prepared using selenization of electrodeposited Cu-Zn-Sn metal precursors

    Science.gov (United States)

    Shao, Pin-Wen; Li, Chun-Ting; Ho, Kuo-Chuan; Cheng, Kong-Wei

    2015-07-01

    In this study, Cu2ZnSnSe4 (CZTSe) films are deposited onto the fluorine-doped-tin-oxide-coated glass substrate via the selenization of electrodeposited Cu-Zn-Sn metal precursors in an acidic solution with the applied potential of -0.9 V vs. an Ag/AgCl electrode. X-ray diffraction patterns reveal that the samples are the quaternary tetragonal CZTSe phase. The thicknesses and direct band gaps of the samples are in the ranges of 2.3 to 2.7 μm and 0.95 to 1.02 eV, respectively. All samples are p-type semiconductors with carrier density, mobility and flat-band potential in the ranges of 3.88 × 1017 to 1.37 × 1018 cm-3, 10.31 to 12.6 cm2 V-1 s-1 and -0.01 V to -0.08 V vs. Ag/AgCl reference electrode, respectively. The sample with [Cu]/[Zn + Sn] and [Zn]/[Sn] molar ratios of 0.87 and 0.66, respectively, has a maximum photo-enhanced current density of 0.41 mA cm-2 at an applied bias of -0.5 V vs. an Ag/AgCl electrode in 0.5 M H2SO4 solution under illumination. The best photo-conversion efficiency of dye-sensitized solar cells using CZTSe with [Cu]/[Zn + Sn] and [Zn]/[Sn] molar ratios of 0.87 and 0.66, respectively, as the counter electrode was 7.98%. The results show the high quality CZTSe films have potentials in applications of photoelectrochemical water splitting and dye-sensitized solar cells.

  11. Incorporation of Cu in Cu(In,Ga)Se{sub 2}-based thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Yong-Duck; Cho, Dae-Hyung; Han, Won-Seok; Park, Nae-Man; Lee, Kyu-Seok; Kim, Je-Ha [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

    2010-12-15

    We have fabricated Cu(In,Ga)Se{sub 2} (CIGS)-based thin-film solar cells by using a cluster-type deposition system. The system is composed of a DC sputter for the Mo back electrode, a co-evaporator for the CIGS absorption layer, and a RF sputter for the ZnO and the transparent-conductive-oxide (TCO) window layers. The deposition of the CdS buffer layer was performed separately. Two solar cells with an effective area of 0.47 cm{sup 2} were fabricated using different processes. One cell, which was prepared with a 1-step process, had a larger atomic concentration of In-Ga than of Cu in the absorption layer and showed a conversion efficiency of 11.1%. The other prepared with a 3-step process had nearly the same In-Ga and Cu concentrations and showed a conversion efficiency of 15.5%. We discuss the incorporation of Cu in the two types of thin-film solar cells.

  12. Experimental Investigation on Strengthening Effect of Cu2O Film in Micro Sheet Forming of Copper

    Science.gov (United States)

    Zheng, Wei; Lin, Xiaojuan; Tang, Bingtao; Wang, Guangchun

    2016-05-01

    Materials processed using micro-manufacturing technologies exhibit significantly different properties compared to those produced using conventional macro-manufacturing techniques. In this paper, the uniaxial tensile tests were performed on the thin sheet specimens of pure copper to investigate how the sheet thickness impacts the flow stress. The experimental results show a continuous decrease of flow stress as the sheet thickness reduces from 200 to 100 μm, but an increase of flow stress with further reduction in thickness. Firstly, by introducing the ratio of surface grains, the decrease trend of flow stress was explained on the basis of surface layer model. Secondly, the strengthening effect of Cu2O film was clearly demonstrated by the x-ray diffraction and electrodeposition process. Finally, considering the effects of Cu2O film and free surface layer, the mechanical properties of Cu2O film was studied, which is helpful to explain the material behavior in micro sheet forming.

  13. Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

    Energy Technology Data Exchange (ETDEWEB)

    Avila, J. R.; Peters, A. W.; Li, Zhanyong; Ortuño, M. A.; Martinson, A. B. F.; Cramer, C. J.; Hupp, J. T.; Farha, O. K.

    2017-01-01

    To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).

  14. Alleviation of process-induced cracking of the antireflection TiN coating (ARC-TiN) in Al-Cu and Al-Cu-Si films

    CERN Document Server

    Peng, Y C; Yang, Y R; Hsieh, W Y; Hsieh, Y F

    1999-01-01

    The alleviation of cracking of the TiN-ARC layer on Al-Cu and Al-Cu-Si films after the development process has been achieved. For the TiN-ARC/Al-Cu system, the stress-induced defects decreased with increasing TiN-ARC layer thickness. In contrast, for the TiN-ARC/Al-Cu-Si system, Si nodules formed during cooling, thereby inducing poor coverage with high aspect-ratio holes. As a result, the photoresist developer penetrated through the films. Chemical vapor deposition of TiN-ARC or predeposition of a Ti Interposing layer was used to eliminate the formation of Si nodules.

  15. Ion beam and complementary SEM and XRD characterization of YBa{sub 2}Cu{sub 3}O{sub 7-x} films obtained by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Branescu, Maria [National Institute for R and D of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125 Bucharest-Magurele (Romania)]. E-mail: maria_branescu@yahoo.com; Thome, L. [Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, 91406 Orsay Cedex (France); Pantelica, D. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania); Ward, I. [CEA, 810 Kifer Road, Sunnyvale, CA 94086 (United States); Vailionis, A. [Stanford University, Stanford, CA 94305 (United States); Ionescu, P. [' Horia Hulubei' National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania)

    2006-08-15

    We report two ion beam analysis techniques, elastic recoil detection analysis (ERDA) and Rutherford backscattering (RBS), to characterize YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films, obtained in situ by pulsed laser deposition (PLD). Initially, ERDA measurements were performed on a thin film to evaluate the PLD rate. RBS measurements correlated with complementary scanning electron microscopy and X-ray diffraction measurements were performed afterwards on a good quality thick YBCO film to determine its stoichiometry, thickness, crystalline structure and surface morphology.

  16. Effect of Cu additive on the structure and magnetic properties of (CoPt)1-xCux films

    Institute of Scientific and Technical Information of China (English)

    HUANG Tinging; WANG Fang; GUO Juhong; XU Xiaohong

    2009-01-01

    CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering tempera-ture of CoPt films. A nearly perfect (001) texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing tempera-ture.

  17. Structured SiCu thin films in LiB as anodes

    Energy Technology Data Exchange (ETDEWEB)

    Polat, Billur Deniz [Istanbul Technical Univ. (Turkey); Eryilmaz, Osman Levent [Argonne National Lab. (ANL), Argonne, IL (United States); Erck, Robert [Argonne National Lab. (ANL), Argonne, IL (United States); Keles, O. [Istanbul Technical Univ. (Turkey); Erdemir, A. [Argonne National Lab. (ANL), Argonne, IL (United States); Amine, Khalil [Argonne National Lab. (ANL), Argonne, IL (United States)

    2014-09-16

    Both helical and inclined columnar Si–10 at.% Cu structured thin films were deposited on Cu substrates using glancing angle deposition (GLAD) technique. In order to deposit Cu and Si two evaporation sources were used. Ion assistance was utilized in the first 5 min of the GLAD to enhance the adhesion and the density of the films. These films were characterized by thin film XRD, GDOES, SEM, and EDS. Electrochemical characterizations were made by testing the thin films as anodes in half-cells for 100 cycles. The results showed that the columnar SiCu thin film delivered 2200 mAh g-1, where the helical one exhibited 2600 mAh g-1, and, their initial coulombic efficiencies were found to be 38%–50% respectively. For the columnar and the helical thin film anodes, sustainable 520 and 800 mAh g-1 with 90% and 99% coulombic efficiencies were achieved for 100 cycles. These sustainable capacities showed the importance of the thin film structure having nano-sized crystals and amorphous particles. The higher surface area of the helices increases the capacity of the electrode because the contact area of the thin film anode with Li ions is increased, and the polarization which otherwise forms on the anode surface due to SEI formation is decreased. In addition, because of larger interspaces between the helices the ability of the anode to accommodate the volumetric changes is improved, which results in a higher coulombic efficiency and capacity retention during cycling test.

  18. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  19. THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS

    Institute of Scientific and Technical Information of China (English)

    F.P. Wang; P. Wu; L.Q. Pan; Y. Tian; H. Qiu

    2002-01-01

    Cu films with thickness of about 500nm were deposited on glass substrates without heat-ing by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V× 0.27A, 430V× 0. 70A and 450V× 1.04A, and the correspondingdeposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-raydiffraction, scanning electron microscopy and atomic force microscopy were used toobserve the structural characteristics of the films. The resistance of the films was mea-sured using four-point probe technique. The amount of larger grains increases and theresistivity of the films decreases evidently with an increase in sputtering power. It isconsidered that the increase in deposition rate with sputtering power mainly weakensthe influence of residual gas atoms on the growing film, and increases substrate andgas temperatures, resulting in the increase in grain size and the decrease in resistivityof the Cu film.

  20. Spray pyrolytic deposition of polycrystalline Cu{sub 2}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo-Young [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Palve, Balasaheb M. [Department of Physics, University of Pune, Pune 411 007 (India); Pathan, Habib M. [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Department of Physics, University of Pune, Pune 411 007 (India); Joo, Oh-Shim, E-mail: joocat@kist.re.kr [Clean Energy Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of polycrystalline Cu{sub 2}S films with band gap of 1.5 eV which is truly useful for solar cell applications. Black-Right-Pointing-Pointer Deposition has been carried out without any complexing agent. Black-Right-Pointing-Pointer Films are compact. - Abstract: Polycrystalline copper sulfide (Cu{sub 2}S) thin films were deposited by spray pyrolysis using aqueous solutions of copper nitrate and thiourea without any complexing agent at substrate (deposition) temperature of {approx}200 Degree-Sign C. The films were deposited onto glass and ITO-coated glass substrates. The deposited films were observed to be blackish brown in color, well adherent to the substrate, pin-hole free and uniform. The structural, surface morphological and optical properties of the films were carried out by means of X-ray diffraction, scanning electron microscopy and optical absorbance measurement techniques. XRD analysis showed that deposited films are chemically close to chalcocite, Cu{sub 2}S. The optical band gap was calculated to be 1.5 eV.

  1. 基于尺寸效应的Cu/CuNi薄膜热电偶灵敏度研究%Study on the sensitivity of Cu/CuNi thin-film thermocouple based on size effect

    Institute of Scientific and Technical Information of China (English)

    杨丽红; 赵源深

    2011-01-01

    采用磁控溅射法在镀有SiO2阻挡层的基底上制备了一系列的Cu/CuNi薄膜热电偶,其厚度分别为0.5,1.0,1.5和2.0 μm,测得四种Cu/CuNi薄膜热电偶的灵敏度,分别为46.47,45.23,44.32和43.98 μV/℃,通过实验和理论研究了薄膜热电偶灵敏度S与厚度δ之间的关系.结果表明:Cu/CuNi薄膜热电偶的灵敏度高于普通Cu/CuNi热电偶;在薄膜厚度大于临界厚度的情况下,薄膜热电偶的灵敏度S随着厚度的倒数l/δ增大而升高.%A series of Cu/CuNi thin film thermocouples with different thicknesses of 0.5, 1.0, 1.5 and 2.0 μm were prepared on the substrates with SiO2 linings by means of magnetron sputtering. After static calibration by experiments, the sensitivities of the prepared thermocouples were obtained respectively of 46.67, 45.23, 44.32 and 43.98 μV/°C. The relationship between sensitivity and thickness of Cu/CuNi thin-film thermocouple was studied by experiments and theory. The results show that the sensitivities of Cu/CuNi thin-film thermocouples are higher than that of ordinary thermocouples; when the thickness of the thin-film is greater than the critical value, the sensitivity (S) of thin-film thermocouple will increase with the increasing of the reciprocal of thickness (1/δ).

  2. Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO.

    Science.gov (United States)

    Ievskaya, Yulia; Hoye, Robert L Z; Sadhanala, Aditya; Musselman, Kevin P; MacManus-Driscoll, Judith L

    2016-07-31

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

  3. Magnetism of coherent Co and Ni thin films on Cu(111) and Au(111) substrates: An ab initio study

    Science.gov (United States)

    Zelený, Martin; Dlouhý, Ivo

    2017-02-01

    We present an ab initio study of structural and magnetic properties of coherent Co and Ni thin films on Cu(111) and Au(111) substrates with thicknesses of up to 6 monolayers. All studied films on Cu(111) substrates prefer structures close their ground state (hcp for Co and fcc for Ni), whereas only the hcp stacking sequence has been found for both films on Au(111) substrates. All studied films exhibit instability of the first monolayer with respect to decomposition into 2-monolayer- or 3-monolayer-high islands, which is in agreement with experimental findings. All studied films are also ferromagnetic, nevertheless the Ni/Cu(111) films reduce their magnetic moments in the layer adjacent to the substrate due to a stronger Cu-Ni interaction at the interface. The magnetic anisotropy of a Co film does not depend on the film thickness: all the studied Co/Au(111) films exhibit a perpendicular magnetic anisotropy, whereas all the Co/Cu(111) films prefer in-plane magnetization. On the other hand, both Ni films change their preference for in-plane orientation of their easy axis to out-of-plane orientation at a critical thickness of 2 monolayers, however, the magnetic anisotropy energies for films thicker than 1 monolayer are smaller than 1 meV/Ni atom. These behaviors of magnetic anisotropy do not depend on the structure of the studied films.

  4. PREPARATION OF NANO-CRYSTALLINE Fe-Cu THIN FILMS AND THEIR MAGNETIC PROPERTIES

    Institute of Scientific and Technical Information of China (English)

    X.F.Bi; S.K.Gong; H.B.Xu; K.I.Arai

    2002-01-01

    Fe-Cu thin films of 0.2μm in thickness with different Cu contents were prepared byusing r.f. magnetron sputtering onto glass substrate. The effect of sputtering param-eters, including Ar gas pressure and input rf power, on the structure and magneticproperties was investigated. It was found that when the power is lower than 70W,the structure of the films remained single bcc-Fe phase with Cu solubility of up to50at.%. TEM observations for the bcc-Fe phase showed that the grain size was inthe nanometer range of less than 20nm. The coercivity of Fe-Cu films was largelyaffected by not only Ar gas pressure but also rf power, and reached about 2.5Oe in thepressure of 0.67-6.67Pa and in the power of less than 100W. In addition, saturationmagnetization, with Cu content less than 60at.%, was about proportional to the con-tent of bcc-Fe. When Cu content was at 60at.%, however, saturation magnetizationwas much smaller than its calculation value.

  5. Superhydrophobic Cu2S@Cu2O film on copper surface fabricated by a facile chemical bath deposition method and its application in oil-water separation

    Science.gov (United States)

    Pi, Pihui; Hou, Kun; Zhou, Cailong; Li, Guidong; Wen, Xiufang; Xu, Shouping; Cheng, Jiang; Wang, Shuangfeng

    2017-02-01

    Cu2S and Cu2O composite (Cu2S@Cu2O) film with micro/nano binary structure was created on copper surface using the mixing solution of sodium thiosulphate and copper sulfate by a facile chemical bath deposition method. After modification with low-cost polydimethylsioxane (PDMS), the superhydrophobic Cu2S@Cu2O film was obtained. The as-prepared film shows outstanding water repellency with a water contact angle larger than 150° and long-term storage stability. The geometric morphology and chemical composition of the film were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS) and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), respectively. Moreover, the same method was used to fabricate superhydrophobic/superoleophilic copper mesh, and it could realize separation of various oily sewages with separation efficiency above 94%. This strategy has potential to fabricate the practical superhydrophobic Cu2S@Cu2O film on copper surface on a large scale due to its simplicity and low cost.

  6. Quaternary Cu2ZnSnSe4 thin films for solar cells applications

    OpenAIRE

    Zoppi, Guillaume; Forbes, Ian; Miles, Robert; Dale, Phillip; Scragg, Jonathan; Peter, Laurence

    2009-01-01

    Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5.684 Ã… and c = 11.353 Ã…) with an electronic bandgap of 0.9 eV. Solar cells with the structure were fabricated with device efficiencies up to 3.2%.

  7. Grain boundaries in Cu(In,Ga)(Se,S){sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rau, Uwe [Forschungszentrum Juelich, IEF5-Photovoltaik, Juelich (Germany); Taretto, Kurt [Universidad Nacional del Comahue, Dto. de Electrotecnia, Buenos Aires, Neuquen (Argentina); Siebentritt, Susanne [Universite du Luxembourg, Luxembourg (Luxembourg)

    2009-07-15

    The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In,Ga)(S,Se){sub 2} alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In,Ga)(S,Se){sub 2} thin-films. (orig.)

  8. Optimization of YBa sub 2 Cu sub 3 O sub 7 thin films for multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Humphreys, R.G.; Chew, N.G.; Satchell, J.S.; Goodyear, S.W.; Edwards, J.A.; Blenkinsop, S.E. (Royal Signals and Radar Establishment, Malvern (United Kingdom))

    1991-03-01

    This paper studies the in situ growth of YBa{sub 2}Cu{sub 3}O{sub 7} thin films using e-beam coevaporation. The growth conditions for smooth YBa{sub 2}Cu{sub 3}O{sub 7} films with high T{sub c} and J{sub c} have been established. Superconductor-insulator and SIS structures have been grown using Y{sub 2}O{sub 3} as an epitaxial insulator, and preliminary vertical transport measurements in patterned structures are reported.

  9. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Science.gov (United States)

    Perrone, A.; D'Elia, M.; Gontad, F.; Di Giulio, M.; Maruccio, G.; Cola, A.; Stankova, N. E.; Kovacheva, D. G.; Broitman, E.

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  10. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  11. Precursors' order effect on the properties of sulfurized Cu2ZnSnS4 thin films

    Science.gov (United States)

    Fernandes, P. A.; Salomé, P. M. P.; da Cunha, A. F.

    2009-10-01

    A dc magnetron sputtering-based method to grow high-quality Cu2ZnSnS4 (CZTS) thin films, to be used as an absorber layer in solar cells, is being developed. This method combines dc sputtering of metallic precursors with sulfurization in S vapour and with post-growth KCN treatment for removal of possible undesired Cu2-xS phases. In this work, we report the results of a study of the effects of changing the precursors' deposition order on the final CZTS films' morphological and structural properties. The effect of KCN treatment on the optical properties was also analysed through diffuse reflectance measurements. Morphological, compositional and structural analyses of the various stages of the growth have been performed using stylus profilometry, SEM/EDS analysis, XRD and Raman Spectroscopy. Diffuse reflectance studies have been done in order to estimate the band gap energy of the CZTS films. We tested two different deposition orders for the copper precursor, namely Mo/Zn/Cu/Sn and Mo/Zn/Sn/Cu. The stylus profilometry analysis shows high average surface roughness in the ranges 300-550 nm and 230-250 nm before and after KCN treatment, respectively. All XRD spectra show preferential growth orientation along (1 1 2) at 28.45°. Raman spectroscopy shows main peaks at 338 cm-1 and 287 cm-1 which are attributed to Cu2ZnSnS4. These measurements also confirm the effectiveness of KCN treatment in removing Cu2-xS phases. From the analysis of the diffuse reflectance measurements the band gap energy for both precursors' sequences is estimated to be close to 1.43 eV. The KCN-treated films show a better defined absorption edge; however, the band gap values are not significantly affected. Hot point probe measurements confirmed that CZTS had p-type semiconductor behaviour and C-V analysis was used to estimate the majority carrier density giving a value of 3.3 × 1018 cm-3.

  12. Preparation and Properties of Amorphous NiFe/Cu/NiFe Thin Films

    Institute of Scientific and Technical Information of China (English)

    YE Yun; JIANG Ya-dong; HU Wen-cheng; ZENG Hong-juan

    2004-01-01

    The amorphous of Permalloy on the copper subtract was studied using composite electroplating method. A portion of hydrogen brings the counteraction on the surface of cathode leading nickel-iron alloys to be anomalous in the process of co-depositing. The results of X-ray diffraction (XRD) show that the Ni-Fe alloys layer is amorphous. The Giant Magneto -Impedance (GMI) effect of Ni-Fe alloys was obtained under the optimal conditions, dependence on the soft magnetic property of Ni-Fe amorphous thin film. As a result, the ratios△ Z/Z of NiFe/Cu/NiFe amorphous thin film are 30% at 40 kHz which is in low frequency. Furthermore, the GMI value of NiFe/Cu/NiFe amorphous thin film with a sandwich structure is higher than that of single-layer ferromagnetic films of the same thickness.

  13. Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

    OpenAIRE

    Fernandes, P. A.; Salomé, P M P; Cunha, A. F. da

    2011-01-01

    Cu2ZnSnS4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of secondary phases like ZnS, CuxSnSx+1, SnxSy, Cu2−xS and MoS2. X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary tech...

  14. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    Science.gov (United States)

    Wang, S. S.; Zhang, Z. L.; Wang, L.; Gao, L. K.; Liu, J.

    2017-03-01

    A need exists for the large-area superconducting YBa2Cu3O7-x (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO3 substrates by TFA-MOD method. Inductive critical current densitiy Jc, microwave surface resistance Rs, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm2 with uniform distribution, and low Rs (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  15. Fluctuating in the hopping rate of CuO thin films with respect to substrate temperature

    Science.gov (United States)

    Serin, N.; Yildiz, A.; Çam, E.; Uzun, Ş.; Serin, T.

    2012-10-01

    Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.

  16. Ionic liquid gating of ultra-thin YBa2Cu3O7-x films

    Science.gov (United States)

    Fête, A.; Rossi, L.; Augieri, A.; Senatore, C.

    2016-11-01

    In this paper, we present a detailed investigation of the self-field transport properties of an ionic liquid gated ultra-thin YBa2Cu3O7-x (YBCO) film. From the high temperature dynamic of the resistivity (>220 K), different scenarios pertaining to the interaction between the liquid and the thin film are proposed. From the low temperature evolution of Jc and Tc, a comparison between the behavior of our system and the standard properties of YBCO is drawn.

  17. Percolation metal-insullator transition in BiSrCaCuO films

    Science.gov (United States)

    Okunev, V. D.; Pafomov, N. N.; Svistunov, V. M.; Lewandowski, S. J.; Gierlowski, P.; Kula, W.

    1996-02-01

    An experimental investigation of the metal-insulator trnasition in BiSrCaCuO (BSCCO) films is reported. We performed resistivity, optical-absorption and critical-temperature measurements on several samples obtained by different technological methods. The results agree well with the percolation mechanism of the metal-insulator transition and show interesting correlations between room-temperature conductivity and superconducting properties of the investigated films.

  18. A Theoretical Model on Solvus Line Prediction of Film and Its Application in Nanogranular Al-Cu System

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A theoretical model on the solvus line prediction of a film was proposed and applied to a nanogranular Al-Cu system. The calculation results show that the solvus line of solute Cu will markedly lower with the decrease of grain size, namely, the starting temperature of θ (Al2Cu) precipitation in a nanogranular Al-Cu film will markedly lower than that of conventional coarse grain alloy with the same Cu concentration, and the precipitation temperatures calculated are comparable with the experimental ones. The theoretical model can be simply used to principle, used to predict precipitation temperature in other systems.

  19. Gas sensing properties of Cu and Cr activated BST thick films

    Indian Academy of Sciences (India)

    G H Jain; L A Patil

    2006-08-01

    H2S gas sensing properties of BST ((Ba0.67Sr0.33)TiO3) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical process. Thick films of BST were prepared by screen-printing technique. The sensing performance of the films was tested for various gases. The films were surface customized by dipping them into aqueous solutions of CuCl2 and CrO3 for various intervals of time. These surface modified BST films showed improved sensitivity to H2S gas (100 ppm) than pure BST film. Chromium oxide was observed to be a better activator than copper oxide in H2S gas sensing. The effect of microstructure and amount of activators on H2S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.

  20. Characterization of CuInSe{sub 2}/CdS thin-film solar cells prepared using CBD

    Energy Technology Data Exchange (ETDEWEB)

    Vidyadharan Pillai, P.K.; Vijayakumar, K.P. [Department of Physics, Cochin University of Science and Technology, Kochi, Kerala (India)

    1997-12-19

    CuInSe{sub 2}/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J-V characteristics of the devices prepared with different thicknesses of CdS and CuInSe{sub 2} were studied. The typical solar cell parameters obtained for the best cell are: V{sub oc}=365 mV, J{sub sc}=12 mA/cm{sup 2}, FF=61%, and {eta}=3.1% under an illumination of 85 mW/cm{sup 2} on a cell of active area 0.1 cm{sup 2}. The J-V and C-V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7

  1. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (CuInSe2 based PV cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (CuInSe2 taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of CuInSe2 based PV cell in fiscal 1994. (1) On formation of high-quality CIGS thin films by bilayer method, Mo film was deposited on a glass substrate by sputtering, and CIGS film with different Ga/In ratios was next formed on the substrate by quaternary simultaneous deposition at different In and Ga deposition speeds. In addition, CdS film was deposited on the CIGS film, and ZnO and ITO films were finally deposited on it by sputtering to complete solar cell. This solar cell offered the maximum conversion efficiency among cells using CIGS film. (2) On formation of high-quality CIGS thin films by three-stage method, a certain correlation was found between substrate temperature and CIGS film composition by monitoring substrate temperature in film forming process. This phenomenon allowed rigorous control of CIS film compositions important for CIS thin film solar cells. (3) On low-cost process technology for thin film formation, Cu(In,Ga)S2 solid solution film was fabricated by expanded selenic process. 3 figs.

  2. Ag-Cu nanoalloyed film as a high-performance cathode electrocatalytic material for zinc-air battery

    OpenAIRE

    Lei, Yimin; Chen, Fuyi; Jin, Yachao; Liu, Zongwen

    2015-01-01

    A novel Ag50Cu50 film electrocatalyst for oxygen reduction reaction (ORR) was prepared by pulsed laser deposition (PLD) method. The electrocatalyst actually is Ag-Cu alloyed nanoparticles embedded in amorphous Cu film, based on transmission electron microscopy (TEM) characterization. The rotating disk electrode (RDE) measurements provide evidence that the ORR proceed via a four-electron pathway on the electrocatalysts in alkaline solution. And it is much more efficient than pure Ag catalyst. ...

  3. Influence of secondary phases during annealing on re-crystallization of CuInSe{sub 2} electrodeposited films

    Energy Technology Data Exchange (ETDEWEB)

    Gobeaut, A. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Laffont, L., E-mail: lydia.laffont@u-picardie.f [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Tarascon, J.-M. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Parissi, L.; Kerrec, O. [Institut de Recherche et de Developpement de l' Energie Photovoltaique, 6 quai Watier, 78401 Chatou cedex (France)

    2009-06-01

    Electrodeposited CuInSe{sub 2} thin films are of potential importance, as light absorber material, in the next generation of photovoltaic cells as long as we can optimize their annealing process to obtain dense and highly crystalline films. The intent of this study was to gain a basic understanding of the key experimental parameters governing the structural-textural-composition evolution of thin films as function of the annealing temperature via X-ray diffraction, scanning/transmission electron microscopy and thermal analysis measurements. The crystallization of the electrodeposited CuInSe{sub 2} films, with the presence of Se and orthorhombic Cu{sub 2} {sub -} {sub x}Se (o-Cu{sub 2} {sub -} {sub x}Se) phases, occurs over two distinct temperature ranges, between 220 {sup o}C and 250 {sup o}C and beyond 520 {sup o}C. Such domains of temperature are consistent with the melting of elemental Se and the binary CuSe phase, respectively. The CuSe phase forming during annealing results from the reaction between the two secondary species o-Cu{sub 2} {sub -} {sub x}Se and Se (o-Cu{sub 2} {sub -} {sub x}Se + Se {yields} 2 CuSe) but can be decomposed into the cubic {beta}-Cu{sub 2} {sub -} {sub x}Se phase by slowing down the heating rate. Formation of liquid CuSe beyond 520{sup o}C seems to govern both the grain size of the films and the porosity of the substrate-CuInSe{sub 2} film interface. A simple model explaining the competitive interplay between the film crystallinity and the interface porosity is proposed, aiming at an improved protocol based on temperature range, which will enable to enhance the film crystalline nature while limiting the interface porosity.

  4. The Photocatalytic and Antibacterial Activity of Cu-Doped TiO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Weerachai SANGCHAY

    2013-02-01

    Full Text Available Thin films of TiO2 and TiO2 doped with Cu were prepared by sol-gel method. The prepared films were calcined at the temperature of 400 °C for 2 h with the heating rate of 10 °C/min. Physical properties as well as crystal compositions of the fabricated films were characterized by XRD, EDX SEM and AFM techniques. The results show that all samples have thickness range from 0.25 to 1.0 um. The film surfaces are typically uniform and dense with TiO2 nanoparticles. The photocatalytic activities of the thin films were also tested via the degradation of methylene blue (MB solution under UV irradiation. Finally, antibacterial activity efficiency was evaluated by the inactivation of E.coli. It was observed that higher Cu concentration gives better photocatalytic activity. With the highest dopant concentration investigated in this experiment (TiO2-1.0Cu condition the films show photocatalytic of 70 % and antibacterial activity of 100 %.

  5. A metastable HCP intermetallic phase in Cu-Al bilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Limei

    2006-07-01

    For the present study, three kinds of layered Cu/Al films have been fabricated. The first kind of samples were multilayered Cu/Al films deposited by sputtering on (001)Si. The individual layer thicknesses were 100 nm, 200 nm and 400 nm, while the total film thickness of 800 nm was kept constant, thus leading to multilayer systems with 8, 4 and 2 layers, respectively. The second type of samples were Cu/Al bilayer films grown on (0001) sapphire by sputtering, with individual layer thicknesses of 400 nm. The third type of samples were bilayer films (100 nm Cu and 100 nm Al) deposited on (0001)sapphire by MBE at room temperature. Applying conventional transmission electron microscopy and X-ray diffraction, different epitaxial growth behaviors were found in these films. All multilayer films from the first type were polycrystalline. The second type of films show a (111) FCC texture and possess intermetallic phases at the interfaces. HRTEM investigations displayed that along [111]FCC, the atomic structure of the interlayer has an ABAB stacking sequence, which is identical with a hexagonal close-packed (HCP) structure in [0001] direction, but not with the ABCABC stacking sequence of Cu and Al in [111]FCC. The lattice parameters of the HCP structure at the interlayer were determined from a model which gave the best agreement between the experimental and simulated images. The parameters are: a=b=0.256 nm, c=0.419 nm, ?=120 , with the space group of P6m2. Furthermore, lattice distortion analysis revealed that the lattice parameters of the HCP phase are increasing from the near-Cu-side to the near-Al-side. The chemical composition of the interlayer was investigated by energy dispersive X-ray spectroscopy (EDS). EDS linescans were performed from pure Al to pure Cu layers. In order to examine the stability of this HCP phase, in-situ heating experiments were performed in the HRTEM at {proportional_to}600 C. Ex-situ heating experiments were performed at different temperatures to

  6. Morphological characterization and AES depth profile analysis of CuInS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, C.; Oyola, J.S.; Gordillo, G. [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); Bartolo-Perez, P. [Departamento de Fisica Aplicada, CINVESTAV-IPN, Merida, Yucatan (Mexico); Clavijo, J. [Departamento de Quimica, Universidad Nacional de Colombia, Bogota (Colombia)

    2010-01-15

    This work presents results regarding the influence of preparation conditions on the morphological properties and on the chemical composition homogeneity of CuInS{sub 2} (CIS) thin films, grown by a chemical reaction of the precursor species evaporated sequentially on a soda-lime glass substrate, in a two- or three-stage process. The CIS samples were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) depth profile measurements. The results showed that the deposition process and the ratio (evaporated Cu/evaporated In) affect the homogeneity of the chemical composition of the CIS film as well as the grain size. It was found that the samples grown in two stages are inhomogeneous in chemical composition and also Cu-rich near the film surface, probably due to the formation of a secondary Cu{sub 2}S phase in the surface region. The results also revealed that adding a third step in the deposition process improved the homogeneity in the chemical composition of CIS films and helped to remove the Cu{sub 2}S surface layer. The chemical composition of the samples deposited in a three-stage process is homogeneous in the whole volume, whereas the chemical composition in the bulk of samples deposited in a two-stage process is significantly different to that measured in the surface region. CIS films with characteristics found for the former case have demonstrated good properties for its use as absorber layers in thin film solar cells. (author)

  7. Preparation of epitaxial La{sub 2-x}Sr{sub x}Cu0{sub 4} thin films for dynamic investigations of epitaxial strain

    Energy Technology Data Exchange (ETDEWEB)

    Trommler, S; Pahlke, P; Huehne, R; Schultz, L; Holzapfel, B, E-mail: s.trommler@ifw-dresden.d [IFW Dresden, PO Box 270116, D-01171 Dresden (Germany); Dresden University of Technology, Department of Physics, Institute for Physics of Solids, 01062 Dresdenm (Germany)

    2010-06-01

    Investigations using different single crystalline substrates can only hardly correlate the applied strain with the resulting superconducting properties of thin films directly, since growth conditions and microstructure may severely affect these properties. An alternative approach to study this interaction is the preparation of superconducting films on piezoelectric substrates enabling a dynamical variation of the induced strain by applying an electric field on the substrate. In this work we report on preliminary growth studies of thin epitaxial La{sub 2-x}Sr{sub x}CuO{sub 4} films on standard and piezoelectric single crystalline substrates. Structural and electrical properties of La{sub 2-x}Sr{sub x}CuO{sub 4} films on SrTiO{sub 3} and SrLaAlO{sub 4} substrates using on-axis pulsed laser deposition are shown and compared to films grown in off-axis geometry. Furthermore, we present the first results of the growth of La{sub 1.85}Sr{sub 0.15}CuO{sub 4} on piezoelectric (001) Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} (PMN-PT) substrates using off-axis geometry. Due to a large lattice mismatch between La{sub 2-x}Sr{sub x}CuO{sub 4} and PMN-PT substrates a buffer layer is required to match the lattice parameters and to support the growth of high quality films. Structural and superconducting properties of thin films grown epitaxial on a SrTiO{sub 3} buffer layer are shown and compared to films grown directly on SrTiO{sub 3} substrates.

  8. Ultrasonic spray-pyrolyzed CuCrO2 thin films

    Science.gov (United States)

    Sánchez-Alarcón, R. I.; Oropeza-Rosario, G.; Gutierrez-Villalobos, A.; Muro-López, M. A.; Martínez-Martínez, R.; Zaleta-Alejandre, E.; Falcony, C.; Alarcón-Flores, G.; Fragoso, R.; Hernández-Silva, O.; Perez-Cappe, E.; Mosqueda Laffita, Yodalgis; Aguilar-Frutis, M.

    2016-05-01

    In this paper the optical, structural and electrical properties of CuCrO2 thin films deposited by ultrasonic spray pyrolysis at temperatures from 400 to 600 °C in steps of 50 °C are presented. Copper and chromium acetylacetonates were chosen as sources of Cu and Cr, respectively, and N,N-dimethylformamide was used as the solvent. X-ray results confirmed that the films as deposited showed the CuCrO2 phase without any post-deposition thermal annealing. The surface morphology was observed to be mirror like, and as the films were deposited at different temperatures, they gradually revealed the presence of small crystallites. The best film’s optical percentage transmission (in the visible region), about 58%, was obtained in films deposited at 450 °C, and the highest band gap energy (3.17 eV) was measured in films deposited at 400 °C. The electrical properties of the films were obtained by the Hall effect. A hole concentration in the range 1019-1021 cm-3, conductivity as high as 35 S cm-1, and mobility lower than 1 cm2 V-1 s-1 were obtained in the films. p-type conductivity was confirmed using the hot point probe arrangement, and the Seebeck coefficient was estimated. The hole conductivity is thought to be due to excess oxygen in the films. Finally, the minimum energy required to transfer carriers from acceptor level to the valence band in the films was estimated by impedance spectroscopy.

  9. Cu Ions Irradiation Impact on Structural and Optical Properties of GaN Thin Film

    Science.gov (United States)

    Shah, A.; Husnain, G.; Ahmad, Ishaq; Mahmood, Arshad

    2013-03-01

    Epitaxial grown Gallium nitride (GaN) thin film on sapphire was irradiated with Cu ions at various fluences (5×1014, 1 ×1015 and 5×1015cm-2). The level of lattice disorder, as measured by Rutherford backscattering spectrometry and channeling (RBS/C), gradually increases with the increasing of ions fluence. Lattice amorphization is observed for the sample irradiated with fluence of 5×1015cm-2 which is also confirmed by X-ray diffractometer (XRD) analysis. It was found that both Raman modes of GaN layer clearly shifted with Cu+ fluences. Both Raman and X-ray analyses explore that Cu atom substituted into Ga sites. Atomic force microscopy (AFM) images show the irradiated GaN surface roughness increases with the increasing ions fluence. The UV-visible transmittance spectrum and ellipsometric measurements show a decrease in the band gap value after irradiation of Cu ions in the GaN film. Moreover, the optical constants (n and k) of the films vary with the increasing of Cu ion fluences.

  10. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    Science.gov (United States)

    Wang, Yuechun; Chen, Xiuhua; Ma, Wenhui; Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei

    2017-02-01

    NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO2/Si and NiCrB/Cu/NiCrB/SiO2/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu3Si.

  11. Structural and optical characterization of 1 µm of ternary alloy ZnCuSe thin films

    Science.gov (United States)

    Shaaban, E. R.; Hassan, H. Shokry; Aly, S. A.; Elshaikh, H. A.; Mahasen, M. M.

    2016-08-01

    Different compositions of Cu-doped ZnSe in ternary alloy Zn1- x Cu x Se thin films (with x = 0, 0.025, 0.05, 0.075 and 0.10) were evaporated (thickness 1 µm) onto glass substrate using electron beam evaporation method. The X-ray diffraction analysis for both powder and films indicated their polycrystalline nature with zinc blende (cubic) structure. The crystallite size was found to increase, while the lattice microstrain was decreased with increasing Cu dopant. The optical characterization of films was carried out using the transmittance spectra, where the refractive indices have been evaluated in transparent and medium transmittance regions using the envelope method, suggested by Swanepoel. The refractive index has been found to increase with increasing Cu content. The dispersion of refractive index has been analyzed in terms of the Wemple-DiDomenico single-oscillator model. The oscillator parameters, the single-oscillator energy E o, the dispersion energy E d and the static refractive index n 0, were estimated. The optical band gap was determined in strong absorption region of transmittance spectra and was found to increase from 2.702 to 2.821 eV with increasing the Cu content. This increase in the band gap was well explained by the Burstein-Moss effect.

  12. Optical, electrical and structural characterization of CuInSe2 thin films

    Science.gov (United States)

    Calderón, C.; Gordillo, G.; Romero, E.; Bolaños, W.; Bartolo-Pérez, P.

    2005-07-01

    The present issue of physica status solidi (b) comprises papers presented at the XVII Latin American Symposium on Solid State Physics (SLAFES 2004) in Havana, Cuba, 6-9 December 2004. Further papers from this conference are published in phys. stat. sol. (c) 2, No. 10 (2005).The cover picture refers to the article [1] on polycrystalline CuInSe2 films by Clara Calderón et al. and shows the crystal structure of CuInSe2 (right) and that of the In-rich phase CuIn3Se5 (left) which were used for the simulation and analysis of the X-ray diffraction spectra.Clara Lilia Calderón Triana is teacher at the Solar Cells Laboratory of Universidad Nacional de Colombia in Bogotá where she has been working on solar cells and semiconductor materials since 1995. In particular, she is fabricating thin film solar cells based on CuInSe2 and Cu(In,Ga)Se2. At SLAFES 2004, Clara Calderón received the physica status solidi Young Researcher Award for her second presentation entitled Study of electrical transport properties of ZnO thin films used as front contact of solar cells [2] which is published as Editor's Choice of this issue.

  13. Exponentially decaying magnetic coupling in sputtered thin film FeNi/Cu/FeCo trilayers

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Yajun, E-mail: yajun.wei@angstrom.uu.se; Akansel, Serkan; Thersleff, Thomas; Brucas, Rimantas; Lansaker, Pia; Leifer, Klaus; Svedlindh, Peter [Department of Engineering Sciences, Uppsala University, 75121 Uppsala (Sweden); Harward, Ian; Celinski, Zbigniew [Department of Physics, University of Colorado, Colorado Springs, Colorado 80918 (United States); Ranjbar, Mojtaba; Dumas, Randy K. [Department of Physics, University of Gothenburg, 41296 Gothenburg (Sweden); Jana, Somnath; Pogoryelov, Yevgen; Karis, Olof [Department of Physics and Astronomy, Uppsala University, 75120 Uppsala (Sweden); Åkerman, Johan [Department of Physics, University of Gothenburg, 41296 Gothenburg (Sweden); Department of Applied Physics and Microelectronics, Royal Institute of Technology, 10044 Kista (Sweden)

    2015-01-26

    Magnetic coupling in trilayer films of FeNi/Cu/FeCo deposited on Si/SiO{sub 2} substrates have been studied. While the thicknesses of the FeNi and FeCo layers were kept constant at 100 Å, the thickness of the Cu spacer was varied from 5 to 50 Å. Both hysteresis loop and ferromagnetic resonance results indicate that all films are ferromagnetically coupled. Micromagnetic simulations well reproduce the ferromagnetic resonance mode positions measured by experiments, enabling the extraction of the coupling constants. Films with a thin Cu spacer are found to be strongly coupled, with an effective coupling constant of 3 erg/cm{sup 2} for the sample with a 5 Å Cu spacer. The strong coupling strength is qualitatively understood within the framework of a combined effect of Ruderman-Kittel-Kasuya-Yosida and pinhole coupling, which is evidenced by transmission electron microscopy analysis. The magnetic coupling constant surprisingly decreases exponentially with increasing Cu spacer thickness, without showing an oscillatory thickness dependence. This is partially connected to the substantial interfacial roughness that washes away the oscillation. The results have implications on the design of multilayers for spintronic applications.

  14. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    Science.gov (United States)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  15. Effects of ultrasonic field in pulse electrodeposition of NiFe film on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Balachandran, R. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia); Yow, H.K. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia)], E-mail: hkyow@mmu.edu.my; Ong, B.H. [Faculty of Engineering, Multimedia University, Cyberjaya Campus, 63100, Cyberjaya (Malaysia); Manickam, R. [Electronics Faculty, Tyndale Education Group Pte Ltd., 188942 (Singapore); Saaminathan, V. [School of Material Science and Engineering, Nanyang Technological University, 639798 (Singapore); Tan, K.B. [Department of Chemistry, Universiti Putra Malaysia, Serdang, 43400 (Malaysia)

    2009-07-29

    NiFe film was pulse electrodeposited on conductive Cu substrate under galvanostatic mode in the presence of an ultrasonic field. The NiFe film electrodeposited was subjected to structural and surface analyses by X-ray diffraction, energy dispersive X-ray spectroscopy, surface profiling and scanning electron microscopy, respectively. The results show that the ultrasonic field has significantly improved the surface roughness, reduced the spherical grain size in the range from 490-575 nm to 90-150 nm, and increased the Ni content from 76.08% to 79.74% in the NiFe film electrodeposited.

  16. Warpage Analysis of Electroplated Cu Films on Fiber-Reinforced Polymer Packaging Substrates

    Directory of Open Access Journals (Sweden)

    Cheolgyu Kim

    2015-06-01

    Full Text Available This paper presents a warpage analysis method that predicts the warpage behavior of electroplated Cu films on glass fiber-reinforced polymer (GFRP packaging substrates. The analysis method is performed using the following sequence: fabricate specimens for scanning 3D contours, transform 3D data into curvatures, compute the built-in stress of the film using a stress-curvature analytic model, and verify it through comparisons of the finite element method (FEM simulations with the measured data. The curvature is used to describe the deflection and warpage modes and orientations of the specimen. Two primary factors that affect the warpage behavior of the electroplated Cu film on FRP substrate specimens are investigated. The first factor is the built-in stress in a Cu film that explains the room temperature warpage of the specimen under no thermal process. The second factor is the misfit of the coefficient of thermal expansion (CTE between the Cu and FRP layer, which is a dominant factor during the temperature change. The calculated residual stress, and predicted curvatures using FEM simulation throughout the reflow process temperature range between 25 and 180 °C are proven to be accurate by the comparison of the FEM simulations and experiment measurements.

  17. Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Udai P. Singh

    2010-01-01

    Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

  18. Thermally activated coherent vortex motion in YBa2Cu3O7-δ thin film microbridges

    NARCIS (Netherlands)

    de Nivelle, M.J.M.E.; De Nivelle, M.J.M.E.; Gerritsma, G.J.; Rogalla, Horst

    1993-01-01

    Microbridges with dimensions smaller than the London penetration depth λ have been prepared in epitaxial YBaCu2O7-δ thin films by means of electron beam lithography. Typical peaks and kinks are observed in their differential resistance versus current characteristics which can be attributed to

  19. Ultrathin film of nickel on the Cu (100) surface: Atomic structure and phonons

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana D., E-mail: svbor@ispms.tsc.ru, E-mail: rusina@ispms.tsc.ru, E-mail: rusina-g@mail.ru; Rusina, Galina G., E-mail: svbor@ispms.tsc.ru, E-mail: rusina@ispms.tsc.ru, E-mail: rusina-g@mail.ru [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055, Russia and National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2014-11-14

    We investigated the structural and vibrational properties of the Cu (100) surface covered with ultrathin (1-5 ML) Ni films using interaction potential from the embedded atom method. The surface relaxation, dispersion relation and polarization of vibrational modes are discussed. Our calculated structural parameters are in good agreement with experimental results. The obtained vibrational frequencies compare well with the available experimental data.

  20. Scaling behavior of ZnPc thin films grown on CuI interlayers

    Science.gov (United States)

    Lee, Jinho; Jin, Sung-Il; Park, Chan Ryang; Yim, Sanggyu

    2015-01-01

    The growth behavior and consequent surface morphology evolution of zinc phthalocyanine (ZnPc) thin films deposited on a CuI interlayer were studied using atomic force microscopy and height difference correlation function (HDCF) analysis. The planar phthalocyanine thin films grown on non-interacting substrates have previously been reported to show anomalous scaling behavior such as large growth exponents, ß, sometimes larger than 0.5, and small anomaly values, ρ, typically smaller than 0.6. In contrast, ZnPc thin films on a CuI interlayer (CuI/ ZnPc) in this work showed conventional scaling behavior with a ß value of 0.26 ± 0.05 and a ρ value of 0.91. The HDCF analyses and x-ray diffraction results indicate that the expected interdigitated electron donor-acceptor interface was hardly formed for the CuI/ZnPc thin film system due to the lack of surface-parallel crystallites with high step edge barriers.

  1. Giant secondary grain growth in Cu films on sapphire

    OpenAIRE

    Miller, David L.; Keller, Mark W.; Shaw, Justin M.; Katherine P. Rice; Keller, Robert R.; Diederichsen, Kyle M.

    2013-01-01

    Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce ...

  2. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    Science.gov (United States)

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  3. Buffer layers for growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x films on silicon

    CERN Document Server

    Razumov, S V

    2001-01-01

    The results of the studies on the structural characteristics of the SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 buffer layers, obtained through the ion-plasma spraying on the silicon substrates, are presented. It is shown that the phase composition and internal stresses in the films are strongly dependent on the deposition temperature. The technological conditions of growth of primarily oriented SrTiO sub 3 , NdGaO sub 3 and CeO sub 2 films are dortmund. The structural quality of the obtained buffer films is sufficient for further growth of the YBa sub 2 Cu sub 3 O sub 7 sub - sub x high-quality films on the silicon substrates

  4. Electrical and gas sensing investigations on the sprayed ZnO:Cu thin films

    Science.gov (United States)

    Mhamdi, A.; Alkhalifah, Menea S.; Rajeh, S.; Labidi, A.; Amlouk, M.; Belgacem, S.

    2017-09-01

    The electrical and gas sensing properties of the sprayed Cu doped ZnO thin layers were investigated. The main study is an analysis of the conduction mechanism based on the measurement results of the frequency dispersion of the conductivity at different temperatures performed by impedance spectroscopy. It emerges from this study that the transport mechanism of charge carriers in such thin films is a thermally activated hopping mechanism. This process is confirmed by the obtained values of the maximum barrier height Wm deduced from the study of the frequency power law of the ac conductivity. Otherwise, we have studied the response evolution of ZnO: Cu sensors ethanol versus time, working temperature and relative doping. From the measurement results of gas sensing properties of ZnO:Cu thin film, we find that a good stability and response was observed for a doping of 2%.

  5. Structure and phonon spectrum of a submonolayer Ni film on the surface of Cu(100)

    Science.gov (United States)

    Rusina, G. G.; Borisova, S. D.; Chulkov, E. V.

    2016-02-01

    The equilibrium atomic structure and the phonon spectra of a submonolayer (θ = 0.5 monolayer) Ni film deposited on the surface of Cu(100) are calculated using the potentials obtained by the embedded atom method. We consider atomic relaxation, the vibrational state density distribution on Ni and substrate atoms, and polarization of vibrational modes. Variation of the phonon spectrum upon segregation of Cu atoms on the film surface is considered. It is shown that mixing of vibrations of Ni adatoms with vibrations of substrate atoms occurs in the entire frequency range, leading to a frequency shift of the vibrational modes of the substrate and to the occurrence of new vibrational states atypical of a clean surface. The Cu(100)- c(2 × 2)-Ni structure is dynamically stabler when placed in the subsurface layer of the substrate.

  6. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Li, Sih-Sian [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  7. A facile self-assembled film assisted preparation of CuGaS{sub 2} ultrathin films and their high sensitivity to L-noradrenaline

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Qin; Kang, Shi-Zhao, E-mail: kangsz@sit.edu.cn; Li, Xiangqing; Qin, Lixia; Mu, Jin, E-mail: mujin@sit.edu.cn

    2016-02-15

    Graphical abstract: A dense CuGaS{sub 2} ultrathin film was prepared in an improved layer-by-layer self-assembled process following heat treatment. And, the as-prepared CuGaS{sub 2} ultrathin film possesses high sensitivity to L-noradrenaline. - Highlights: • Tetragonal CuGaS{sub 2} film was prepared in a simple process. • CuGaS{sub 2} film exhibits a narrow emission. • High sensitivity to LNE with a detection limit of 2.83 ng cm{sup −2}. - Abstract: A dense CuGaS{sub 2} ultrathin film was prepared in an improved layer-by-layer self-assembled process followed by heat treatment and characterized with X-ray diffraction, scanning electron microscopy, UV–vis spectroscopy, and fluorescence spectroscopy. Meanwhile, the application of the as-prepared CuGaS{sub 2} ultrathin film in the trace detection of L-noradrenaline was explored as a photoluminescent probe. The results show that the tetragonal phase CuGaS{sub 2} film fabricated on the glass substrate is smooth and dense. And this CuGaS{sub 2} ultrathin film can exhibit a strong emission at 829 nm with full width at half maximum of approximate 12 nm. Furthermore, the as-prepared CuGaS{sub 2} ultrathin film possesses high sensitivity to L-noradrenaline with a detectable concentration of 2.83 ng cm{sup −2} when it is used as a photoluminescent probe, implying that it is a promising candidate in the field of biological and chemical sensing in future.

  8. Microstructural revolution of CIGS thin film using CuInGa ternary target during sputtering process

    Science.gov (United States)

    Liao, Kuang-Hsiang; Su, Cherng-Yuh; Ding, Yu-Ting; Pan, Cheng-Tang

    2012-12-01

    CuInGa (CIG) ternary targets were prepared by vacuum arc remelting and used to deposit CIG thin films through direct current (DC) sputtering. We adjusted the sputtering energy (1-2 kWh) by tuning both the sputtering power and the accumulative sputtering time. The impact of the varying sputtering energy on the microstructure of CIG targets and thin films was subsequently investigated. The experimental results indicated that the compositional uniformity of CIG targets is strongly influenced by this parameter. CIG thin films with a flat topography, low porosity, and dense grain boundaries were obtained when targets were accumulatively sputtered at 1 kWh. These films showed good compositional uniformity while the CIG targets were found to maintain their microstructural characteristics as compared to their as-melted counterparts. On the other hand, Cu(In,Ga)Se2 (CIGS) thin films, obtained by a selenization process, exhibited large faceted grains composed of a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. Accumulative sputtering of CIG targets at higher energies (e.g., 2 kWh) resulted in phase transformation and loss of In material as a result of an excess of residual heat budget on the surface generated by Ar ions bombardment. The CIG thin films thus showed an In-rich composition ratio, thereby potentially leading to In-rich CIGS thin films containing traces of an InSe compound.

  9. The structure of Cu-Al films prepared by unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Bell, A.J. [Czech Acad. of Sci., Prague (Czech Republic). Inst. of Phys.; Chepera, M.; Zeman, J. [Military Technical Institute, PO Box 574, 602 00 (Czech Republic)

    1997-11-25

    Recently, the formation of nanostructured and amorphous materials has been the focus of intense research owing to interest from a basic scientific point of view and their potential technological value. This paper reports on the variation in, and control of, the structure of Cu-Al films prepared in a state-of-the-art unbalanced DC magnetron sputtering system. The structure is shown to be considerably influenced by ion bombardment during growth with both the energy and ratio of impinging ions: arriving atoms playing dominant roles. In addition, the addition of different quantities of Al to the thin film is shown to have a dramatic impact on the structure. The conditions under which nanocrystalline Cu-Al films can be prepared are given. The films were deposited by the magnetron sputter ion plating (MSIP) process using negative substrate biases up to 1000 V and at different argon pressures down to 0.04 Pa. The structure of the films were determined from XRD analyses. An attempt to correlate obtained XRD spectra with the structure of the film is suggested. The resistivities of the films were measured using the four-point probe method, whilst the content of Al was determined from EDX measurements. (orig.) 15 refs.

  10. Synthesis of CuInS2 thin films by spray pyrolysis deposition system

    Science.gov (United States)

    Hussain, K. M. A.; Podder, J.; Saha, D. K.

    2013-02-01

    Copper indium disulfide (CuInS2) thin films were deposited on the glass substrate by the locally made spray pyrolysis deposition system. The films were characterized by using energy dispersive analytical X-ray (EDAX) spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry. The XRD pattern indicated that the prepared CuInS2 thin films are chalcopyrite structure. Lattice parameters and FWHM values were verified by the standard values of JCPDS 270159 file. The EDAX analysis indicated the stoichiometric ratio of 1.14:1:1.88 (CIS-2) thin films. The SEM analysis showed that the average grain size of the film was 100-800 nm and that of XRD data indicate the values of 30-50 nm. The high absorption co-efficient and 1.48 eV band gap of the films indicate that the films are useful as an absorber for photovoltaic application in the solar cell.

  11. Synthesis and optical characterization of ternary chalcogenide Cu3BiS3 thin film by spin coating

    Science.gov (United States)

    Rawal, Neha; Hadi, Mohammed Kamal; Modi, B. P.

    2017-05-01

    In this work, ternary Chalcogenide Cu3BiS3(CBS) thin films have been prepared and modified by using spin coating technique. Lucratively, spin coating technique is easy going and simple though it hasn't given an enclosure and extensive focus of researches for Cu3BiS3 thin films formation. The surface smoothness and the homogeneity of the obtained thin films have been optimized throughout varying the annealing temperature, concentration and rotation speed. It had been found that as prepared films the value of the energy band gap is 1.4 eV, the absorption coefficient 105 cm-1. Each values of the EBG (Energy Band Gap) and AC (Absorption coefficient) was found in quite agreement with the published work of CBS thin film formation by other methods as CBD, dip coating etc. It signifies that Cu3BiS3 films can be used as an absorber layer for thin film solar cell.

  12. YBa2Cu3O7 films grown by metal cosputtering

    Science.gov (United States)

    Steinberg, Richard N.; McCambridge, James D.; Prober, Daniel E.; Guenin, Bruce M.

    1992-04-01

    Superconducting YBa2Cu3O7 films have been grown in situ by simultaneously sputtering from Y, BaCu, and Cu targets. One advantage of such metal cosputtering is the higher deposition rate compared to oxide target sputtering. Another advantage is the ability to control the individual element rates to vary composition or to substitute for any of the metals without interrupting film growth and without making additional composite targets. To prevent film damage due to oxygen ion bombardment during film growth which was observed when the sputter guns faced the substrate (on-axis sputtering), an off-axis geometry was used. One disadvantage we found with in situ metal cosputtering was that reproducibility of stoichiometries was difficult because of the presence of oxygen at the targets. To minimize the oxygen partial pressure at the targets during sputtering, the chamber was differentially pumped. Films grown in the off-axis geometry with a substrate temperature near 700 °C, a chamber pressure of 7.5 mT, and an O2:Ar flow ratio of 1:50 had zero resistance at 85 K. Results for on-axis, composite target magnetron sputtering with a high-strength magnet are also presented. These results are not promising.

  13. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  14. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

    Science.gov (United States)

    Xinkun, Wu; Wei, Liu; Shuying, Cheng; Yunfeng, Lai; Hongjie, Jia

    2012-02-01

    Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 °C for 3 h Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3, 6.96 Ω·cm, and 12.9 cm2/(V·s), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

  15. Photoelectric properties of Cu2ZnSnS4 thin films deposited by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    吴新坤; 柳伟; 程树英; 赖云锋; 贾宏杰

    2012-01-01

    Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature,and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 ℃ for 3 h.Fabricated CZTS thin films were characterized by X-ray diffraction,energy dispersive X-ray spectroscopy,ultraviolet-visible-near infrared spectrophotometry,the Hall effect system,and 3D optical microscopy.The experimental results show that,when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15,the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm-1 in the energy range 1.5-3.5 eV,and a direct band gap of about 1.47 eV.The carrier concentration,resistivity and mobility of the CZTS film are 6.98 × 1016 cm-3,6.96 Ω.cm,and 12.9 cm2/(V.s),respectively and the conduction type is p-type.Therefore,the CZTS thin films are suitable for absorption layers of solar cells.

  16. Structure, Magnetism, and Transport of CuCr2Se4 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Bettinger, J.S.; Chopdekar, R.V.; Liberati, M.; Neulinger, J.R.; Chshiev, M.; Takamura, Y.; Alldredge, L.M.B.; Arenholz, E.; Idzerda,Y.U.; Stacy, A.M.; Butler, W.H.; Suzuki, Y.

    2007-04-01

    We report the successful growth of highly spin-polarized chalcogenide thin films of CuCr{sub 2}Se{sub 4}, which are promising candidates for spin-based electronic applications. We also present electronic structure calculations for CuCr{sub 2}Se{sub 4} that, together with magnetic and transport data, imply that the stoichiometric compound is a metallic ferromagnet with a relatively low density of hole-like carriers at the Fermi energy. These calculations also predict that a deficiency of Se will deplete the minority density of states at the Fermi energy perhaps leading to a half-metal. We have successfully grown thin films of CuCr{sub 2}Se{sub 4} by pulsed laser deposition on isostructural MgAl{sub 2}O{sub 4} substrates followed by an anneal in a Se-rich environment. X-ray diffraction confirms the structure of CuCr{sub 2}Se{sub 4} on MgAl{sub 2}O{sub 4} substrates as well as a secondary phase of Cr{sub 2}Se{sub 3}. X-ray absorption spectroscopy indicates that the chemical structure at the surface of the films is similar to that of bulk CuCr{sub 2}Se{sub 4} single crystals. Magnetization measurements indicate that these films saturate with a magnetic moment close to 5 {micro}{sub B} per formula unit and a T{sub c} above 400 K. X-ray magnetic circular dichroism shows that the magnetism persists to the surface of the film. Resistivity and Hall effect measurements are consistent with a p-type ferromagnetic metallic behavior and with the electronic structure calculations.

  17. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  18. Selenization of co-sputtered CuInAl precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Dwyer, Daniel; Efstathiadis, Haralabos; Haldar, Pradeep [College of Nanoscale Science and Engineering, University at Albany, State University of New York, 255 Fuller Road, Albany, NY 12203 (United States); Repins, Ingrid [National Renewable Energy Laboratory, Golden, CO 80401 (United States)

    2010-03-15

    CuInAl precursor films with varying Al/(In+Al) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Metal precursor films were then selenized under vacuum conditions using thermally evaporated elemental selenium. Both precursor films and selenized samples were characterized for composition, crystalline phases, morphology, and compositional depth uniformity. Selenized films show low Al incorporation and phase separation when selenized at both 500 and 525 C. Films selenized with a Se deposition rate of 12 Aa/s showed poor adhesion compared with samples selenized at 4 Aa/s. The segregation of aluminum towards the back contact as well as oxygen incorporation appears to cause adhesive loss in extreme cases, and poor interface electrical characteristics in others. The maximum device efficiency measured was 5.2% under AM1.5 for a device with {proportional_to}2 at% aluminum. (author)

  19. Electrochemical processing of high- Bi(Pb)–Sr–Ca–CuO thin films

    Indian Academy of Sciences (India)

    N V Desai; L A Ekal; D D Shivagan; S H Pawar

    2000-02-01

    Superconducting thin films of Bi(Pb)–Sr–Ca–CuO system were prepared by depositing the film onto silver substrate by d.c. electrodeposition technique with dimethyl sulphoxide bath in order to examine the effect of Pb addition to the BSCCO system. The films were deposited at the potential of – 0.8 V vs saturated calomel electrode (SCE) onto the silver substrate. The different preparative parameters such as deposition potential, deposition time were studied and optimized. These films were then oxidized electrochemically at room temperature in an alkaline (1 N KOH) solution, and also at 600°C temperature in an oxygen atmosphere. The films showed the superconducting behaviour, with values ranging between 85 K and 96 K, respectively.

  20. Epitaxial thin films of Dirac semimetal antiperovskite Cu3PdN

    Science.gov (United States)

    Quintela, C. X.; Campbell, N.; Shao, D. F.; Irwin, J.; Harris, D. T.; Xie, L.; Anderson, T. J.; Reiser, N.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

    2017-09-01

    The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semimetal. However, the experimental realization of Cu3PdN and the consequent study of its electronic properties have been hindered due to the difficulty of synthesizing this material. In this study, we report fabrication and both structural and transport characterization of epitaxial Cu3PdN thin films grown on (001)-oriented SrTiO3 substrates by reactive magnetron sputtering and post-annealed in NH3 atmosphere. The structural properties of the films, investigated by x-ray diffraction and scanning transmission electron microscopy, establish single phase Cu3PdN exhibiting cube-on-cube epitaxy (001)[100]Cu3PdN||(001)[100]SrTiO3. Electrical transport measurements of as-grown samples show metallic conduction with a small temperature coefficient of the resistivity of 1.5 × 10-4 K-1 and a positive Hall coefficient. Post-annealing in NH3 results in the reduction of the electrical resistivity accompanied by the Hall coefficient sign reversal. Using a combination of chemical composition analyses and ab initio band structure calculations, we discuss the interplay between nitrogen stoichiometry and magneto-transport results in the framework of the electronic band structure of Cu3PdN. Our successful growth of thin films of antiperovskite Cu3PdN opens the path to further investigate its physical properties and their dependence on dimensionality, strain engineering, and doping.

  1. Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2015-02-15

    Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

  2. Effect of Cobalt Doping on Nanostructured CuO Thin Films

    Science.gov (United States)

    Bayansal, Fatih; Taşköprü, Turan; Şahin, Bünyamin; Çetinkara, Hacı Ali

    2014-07-01

    The growth of cobalt-doped nanostructured CuO thin films using the successive ionic layer adsorption and reaction (SILAR) method is presented. It is found that Co doping considerably influences the structural (X-ray diffraction (XRD)), morphological (finite-element-scanning electron microscopy (FESEM)), and optical (ultraviolet/visible (UV/vis.) and Raman) properties of the films. XRD experiments evidence that the crystallite size of the films decreased with increasing Co doping. FESEM images reveal that the grain size of the nanostructures decreased with increasing doping concentration. By UV/vis. analysis, it is found that Co doping has a decreasing effect on band gap energy. The broadening and downshift of the Raman peaks are mainly attributed to the quantum confinement effect of CuO nanostructures.

  3. Photocatalytic performance of TiO2 thin films connected with Cu micro-grid

    Institute of Scientific and Technical Information of China (English)

    ZHU HaiLing; ZHANG JunYing; WANG TianMin; WANG LiuGang; LAN Xiang; HUANG BaiBiao

    2009-01-01

    Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalyticprocess,we prepared TiO2 thin film with its surface modified by a connected Cu micro-grid via a microsphere lithography strategy,which showed higher photocatalytic activity than the pure TiO2 film.The improvement of photocataiytic activity of Cu micro-grid to the TiO2 film is due to the charge carrier separation and electron transfer by the conducting metal grid.The photocatalyUc activity was improved as metal loading increased,which obtained the best performance at a certain loading amount,and then decreased at higher loading amount.This phenomenon was attributed to the metal's bulk effect which could be explained by the relationship between the energetic positions and the metal cluster size.

  4. Photocatalytic performance of TiO2 thin films connected with Cu micro-grid

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalytic process, we prepared TiO2 thin film with its surface modified by a connected Cu micro-grid via a microsphere lithography strategy, which showed higher photocatalytic activity than the pure TiO2 film. The improvement of photocatalytic activity of Cu micro-grid to the TiO2 film is due to the charge carrier separation and electron transfer by the conducting metal grid. The photocatalytic activity was improved as metal loading increased, which obtained the best performance at a certain loading amount, and then decreased at higher loading amount. This phenomenon was attributed to the metal’s bulk effect which could be explained by the relationship between the energetic positions and the metal cluster size.

  5. Thin film CdS/Cu/sub 2/S solar cells by chemical spraying

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, J.F.

    1976-12-15

    This project involves further work on a process developed to make very thin film CdS/Cu/sub 2/S solar cells. The process is adapted to the float glass process and consists of spraying suitable chemicals on a moving ribbon of glass which floats on a bath of molten metal. The spraying produces the necessary thin films (with suitable optical and electrical properties) of SnO/sub 2/, CdS and Cu/sub 2/S. The CdS films produced are two to three microns thick, thus conserving the use of cadmium. The estimated cost per peak watt is approximately 7 cents (1975 costs) at 5 percent efficiency and an output of 37.6 x 10/sup 6/ square meters annually. The cells are blackwall cells. A float glass plant modified for the process is shown schematically. Research progress is described.

  6. Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film

    Science.gov (United States)

    Jeon, Hunsoo; Lee, Ahreum; Lee, Gang-Seok; Jo, Dong-Wan; Ok, Jin-Eun; Kim, Kyoung Hwa; Yang, Min; Yi, Sam Nyung; Ahn, Hyung Soo; Cho, Chae-Ryong; Kim, Suck-Whan; Ha, Hong-Ju

    2011-01-01

    CuInGaSe (CIGS) mixed-source was prepared by hydride vapor transport method (HVT). The new source synthesis method was attempted by mixing several metals such as Cu, In, Ga, and Se with 3:5:1:4 mass ratios. This mixed-source was soaked at 1090 °C for 90 min in nitrogen atmosphere. Then, the CIGS was grinded up and formed the state of powder and the CIGS pellet was made by pressure machine. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass with evaporated molybdenum layer by e-beam evaporating this CIGS pellet. For crystallization of CIGS thin film, we measured scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312), and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

  7. Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system

    Institute of Scientific and Technical Information of China (English)

    Chen Miao-Gen; Xie Jian-Ping; Jin Jin-Sheng; Xia A-Gen; Ye Gao-Xiang

    2008-01-01

    A nearly free sustained copper (Cu) film system has been successfully fabricated by thermal evaporation deposition of Cu atoms on silicone oil surfaces,and a characteristic ordered pattern has been systematically studied.The ordered pattern,namely,band,is composed of a large number of parallel key-formed domains with different width w but nearly uniform length L;its characteristic values of ω and L are very susceptible to the growth period,deposition rate and nominal film thickness.The formation mechanism of the ordered patterns is well explained in terms of the relaxation of the internal stress in the films,which is related to the nearly zero adhesion of the solid-liquid interface.By using a two-time deposition method,it is confirmed that the ordered patterns really form in the vacuum chamber.

  8. Growth of poly-crystalline Cu films on Y substrates by picosecond pulsed laser deposition for photocathode applications

    Energy Technology Data Exchange (ETDEWEB)

    Gontad, F. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Lorusso, A., E-mail: antonella.lorusso@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Klini, A.; Manousaki, A. [Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), 100 N. Plastira St., GR 70013 Heraklion, Crete (Greece); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Fotakis, C. [Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), 100 N. Plastira St., GR 70013 Heraklion, Crete (Greece)

    2015-11-01

    In this work, the deposition of Cu thin films on Y substrates for photocathode applications by pulsed laser deposition employing picosecond laser pulses is reported and compared with the use of nanosecond pulses. The influence of power density (6–50 GW/cm{sup 2}) on the ablation of the target material, as well as on the properties of the resulting film, is discussed. The material transfer from the target to the substrate surface was found to be rather efficient, in comparison to nanosecond ablation, leading to the growth of films with high thickness. Scanning electron microscope analysis indicated a quasi-continuous film morphology, at low power density values, becoming granular with increasing power density. The structural investigation, through X-ray diffraction, revealed the poly-crystalline nature of the films, with a preferential growth along the (111) crystallographic orientation of Cu cubic network. Finally, energy-dispersive X-ray spectroscopy showed a low contamination level of the grown films, demonstrating the potential of a PLD technique for the fabrication of Cu/Y patterned structures, with applications in radiofrequency electron gun technology. - Highlights: • Cu thin films were successfully deposited on Y substrates through ultrafast PLD. • The film presents a quasi-continuous morphology. • The use of picosecond pulses increases the film thickness. • The Cu thin films are very adherent to the Y substrate.

  9. Transparent Conductive Al-Doped ZnO/Cu Bilayer Films Grown on Polymer Substrates at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    黄继杰; 王钰萍; 吕建国; 龚丽; 叶志镇

    2011-01-01

    Al-doped ZnO (AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature. The structural, electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer. The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 x 10~3 Ω-1, with a low sheet resistance of12.38Ω/sq, an acceptable visible transmittance of 73%, and a high near-infrared reflectance of about 50%.%Al-doped ZnO(AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature.The structural,electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer.The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 × 10-3 Ω-1,with a low sheet resistance of 12.38Ω/sq,an acceptable visible transmittance of 73%,and a high near-infrared reflectance of about 50%.

  10. Correlation between plastic films properties and flexographic prints quality

    Directory of Open Access Journals (Sweden)

    Joanna Izdebska

    2015-12-01

    Full Text Available The article presents a preliminary study of the correlation between films properties and flexographic print quality defined as the optical density of full tone. It is also an attempt to answer the question whether traditional plastic films can be replaced by biodegradable and compostable films as printing substrates and as materials for packaging. Four kinds of films were used in the experiments – two plastic films (PP and PET and two biodegradable films (PLA and cellulose. The permeability to water vapour and oxygen, as well as the tensile strength and elongation at break of the material were investigated for all samples. The measurements of the contact angle with water, diiodomethane and printing ink were also conducted for these films, and their surface free energy was determined. All samples were printed on laboratory equipment by a flexographic technique using water-based inks and the optical density of copies was measured. It has been found that the print quality was determined by the type of film used. Furthermore, the correlation between optical density and wettability defined as the contact angle between film and water or printing ink turned out to be significant. Other important parameter is surface free energy, albeit to a little lesser extent. The barrier and mechanical properties of the material have an even weaker impact on optical density. In addition, it is possible to choose the biodegradable film with properties corresponding to conventional, commonly used films which enable high quality prints.

  11. Photocatalytic degradation of methylene blue by TiO2-Cu thin films: theoretical and experimental study.

    Science.gov (United States)

    Carvalho, Hudson W P; Batista, Ana P L; Hammer, Peter; Ramalho, Teodorico C

    2010-12-15

    In this work the effect of doping concentration and depth profile of Cu atoms on the photocatalytic and surface properties of TiO(2) films were studied. TiO(2) films of about 200 nm thickness were deposited on glass substrates on which a thin Cu layer (5 nm) was deposited. The films were annealed during 1s to 100°C and 400°C, followed by chemical etching of the Cu film. The grazing incidence X-ray fluorescence measurements showed a thermal induced migration of Cu atoms to depths between 7 and 31 nm. The X-ray photoelectron spectroscopy analysis detected the presence of TiO(2), Cu(2)O and Cu(0) phases and an increasing Cu content with the annealing temperature. The change of the surface properties was monitored by the increasing red-shift and absorption of the ultraviolet-visible spectra. Contact angle measurements revealed the formation of a highly hydrophilic surface for the film having a medium Cu concentration. For this sample photocatalytic assays, performed by methylene blue discoloration, show the highest activity. The proposed mechanism of the catalytic effect, taking place on Ti/Cu sites, is supported by results obtained by theoretical calculations.

  12. Non-equilibrium deposition of phase pure Cu2O thin films at reduced growth temperature

    Directory of Open Access Journals (Sweden)

    Archana Subramaniyan

    2014-02-01

    Full Text Available Cuprous oxide (Cu2O is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300 °C by intentionally controlling solely the kinetic parameter (total chamber pressure, Ptot at fixed thermodynamic condition (0.25 mTorr pO2. A strong non-monotonic effect of Ptot on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu2O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.

  13. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  14. Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

    Science.gov (United States)

    Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

    2017-10-01

    For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

  15. The Effects of Cu-doped TiO2 Thin Films on Hyperplasia, Inflammation and Bacteria Infection

    Directory of Open Access Journals (Sweden)

    Linhua Li

    2015-11-01

    Full Text Available In the present work, different concentrations of Cu ion (1, 2, 5 and 10 wt % were doped in the TiO2 film by a sol-gel method and dip coating process. The morphology of the Cu-doped TiO2 films were characterized by scanning electron microscopy (SEM and the results showed that the doped Cu made no change to the TiO2 films. The nitric oxide (NO release experiment showed that these Cu-doped surfaces showed the ability of catalytic decomposition of exogenous donor S-nitroso-N-acetyl-penicillamine (SNAP to generate (NO. Based on fluorescence analysis and CCK-8 quantitative results, such films had the ability to inhibit smooth muscle cells adhesion, proliferation and migration with SNAP in vitro. The macrophage adhesion assay and anti-bacterial test proved that such Cu-doped TiO2 films also possessed anti-inflammatory and anti-bacterial abilities. All the abilities above showed positive correlation with the amounts of the doped Cu. This study suggested that the Cu-doped TiO2 films were capable of generating physiological levels of NO in the presence of endogenous donor S-nitrosothiols (RSNO, endowing the TiO2 films with anti-hyperplasia, anti-inflammatory and anti-bacterial abilities.

  16. Modification of ZnO Thin Films by Ni, Cu, and Cd Doping*1

    Science.gov (United States)

    Jiménez-González, A. E.

    1997-02-01

    With the propose of investigating the effect of transition elements in ZnO thin films prepared by the Successive Ion Layer Adsorption and Reaction (SILAR) technique, the deposition solutions were chemically impurified with Ni, Cu, and Cd, as elements of the Ib, IIb, and VIIIa groups. X-ray fluorescence (XRF) analyses confirm that the impurification with Ni and Cu in fact took place but the impurification with Cd did not, while the XRD analyses show that foras preparedand Ni-impurified annealed films, the crystallites are almost oriented along thecaxis. The electrical properties of the ZnO films were also modified with the impurification. After annealing in air (450°C) the dark conductivity of the films was increased in the case of Ni and Cd impurification up to 1.80×10-3and 1.86×10-2[Ω cm]-1, respectively, but it decreased drastically in the case of Cu to 5.51×10-7[Ω cm]-1, as referred to the dark conductivity (1.86×10-4[Ω cm]-1) of the pure ZnO sample. The measured activation energy for the electrical conductivity of the modified ZnO thin films is 55 meV for the Ni modification, indicating the existence of donor levels. On the other hand, the Cu modification increases the activation energy up to 132 meV, which is higher than the activation energy for pure ZnO thin films (98 meV).

  17. Shape-Controlled Synthesis of High-Quality Cu7 S4 Nanocrystals for Efficient Light-Induced Water Evaporation.

    Science.gov (United States)

    Zhang, Changbo; Yan, Cong; Xue, Zhenjie; Yu, Wei; Xie, Yinde; Wang, Tie

    2016-10-01

    Copper sulfides (Cu2-x S), are a novel kind of photothermal material exhibiting significant photothermal conversion efficiency, making them very attractive in various energy conversion related devices. Preparing high quality uniform Cu2-x S nanocrystals (NCs) is a top priority for further energy-and sustainability relevant nanodevices. Here, a shape-controlled high quality Cu7 S4 NCs synthesis strategy is reported using sulfur in 1-octadecene as precursor by varying the heating temperature, as well as its forming mechanism. The performance of the Cu7 S4 NCs is further explored for light-driven water evaporation without the need of heating the bulk liquid to the boiling point, and the results suggest that as-synthesized highly monodisperse NCs perform higher evaporation rate than polydisperse NCs under the identical morphology. Furthermore, disk-like NCs exhibit higher water evaporation rate than spherical NCs. The water evaporation rate can be further enhanced by assembling the organic phase Cu7 S4 NCs into a dense film on the aqueous solution surface. The maximum photothermal conversion efficiency is as high as 77.1%.

  18. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-15

    Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  19. Preparation of Cu2ZnSnS4 thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Science.gov (United States)

    Su, Zhenghua; Yan, Chang; Sun, Kaiwen; Han, Zili; Liu, Fangyang; Liu, Jin; Lai, Yanqing; Li, Jie; Liu, Yexiang

    2012-07-01

    Earth-abundant Cu2ZnSnS4 is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu2ZnSnS4 (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu2ZnSnS4 and the p-type conductivity with a carrier concentration in the order of 1018 cm-3 and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  20. Enhancement in as-grown CuInSe{sub 2} film microstructure by a three potential pulsed electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Padros, A. [Department of Physical Chemistry, University of Barcelona (UB), Institute for Bioengineering of Catalonia (IBEC) Marti i Franques 1, 08028 Barcelona (Spain); Caballero-Briones, F.; Sanz, Fausto [Department of Physical Chemistry, University of Barcelona (UB), Institute for Bioengineering of Catalonia (IBEC) Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Maria de Luna 11, 50018 Zaragoza (Spain)

    2010-08-15

    P-type copper indium diselenide (CuInSe{sub 2}) films have been prepared onto ITO substrates by an electrodeposition method, that sequentially applies potential pulses at the deposition potential of each element Cu, Se and In, and then step it back in cyclically to induce the solid state reaction between the elements. Two electrolyte concentrations as well as three different pulse durations were assessed. The resulting films were compared with those deposited at fixed electrode potentials. As-grown films are nanocrystalline and have an E{sub g} {proportional_to} 0.95 eV. Raman spectroscopy shows that Se and Cu-Se contents decrease while pulse duration increases and electrolyte concentration decreases. Cu-Se phases are even absent for films grown at the low electrolyte concentration. These results represent a great improvement in the film phase purity reducing the need of post-deposition treatments. (author)

  1. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  2. High Tc thin film superconductors: preparation, patterning and characterization. [Y-Ba-Cu-O; Bi-Sr-Ca-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. (Center for Tech. Education, Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel))

    1991-12-10

    A conventional oil-pumped vacuum system equipped with resistively heated tungsten boat sources was used for evaporation of bismuth- or yttrium-based cuprates for high Tc thin films superconductors. A well-ground mixture with atomic proportions of bismuth, SrF{sub 2}, CaF{sub 2} and copper for bismuth-based material, and of YF{sub 3}, BaF{sub 2} and copper for yttrium-based material, was inserted into the boat and then resistively evaporated onto different substrates such as MgO, ZrO{sub 2} and SrTiO{sub 3} kept at room temperature. Yttrium-based thin films were found to have a better quality upon reduction of fluorine in the constituents. Thus, films prepared with an yttrium BaF{sub 2} and copper mixture show a metallic-like behaviour, sharper transition and higher zero-resistance temperature as compared with that of films obtained by using a YF{sub 2} constituent instead of yttrium. Bismuth-based thin films were found to lose bismuth during heat treatment unless the copper constituent ended the evaporation process and was subsequently fully oxidized at 400degC. Bismuth-based patterned films were easily obtained by using a lift-off photolithographic method. Typical thickness of the films was measured to be about 0.5 {mu}m after heat treatment. (orig.).

  3. Effect of bath concentration on the growth and photovoltaic response of SILAR-deposited CuO thin films

    Science.gov (United States)

    Visalakshi, S.; Kannan, R.; Valanarasu, S.; Kim, Hyun-Seok; Kathalingam, A.; Chandramohan, R.

    2015-09-01

    Solar cell property of p-CuO/n-Si heterojunction was investigated using SILAR-deposited CuO thin films. The effects of copper salt concentration on the growth of CuO films and its effect on the efficiency in solar cell conversion were investigated. Structural, morphological, optical and electrical studies of the CuO thin films deposited at 90 °C with different copper sulphate concentrations are reported. Crystallinity of the film is found to increase with the increase in copper sulphate concentration. The measured Raman spectrum of the deposited film showed peaks corresponding to CuO phase. It is observed by the SEM that the film is homogeneous fully covering the substrate. The optical band gap of the deposited film has exhibited a decrease in band gap from 1.76 to 1.57 eV with the increase in copper sulphate concentration. Solar cell device was constructed using the p-CuO film deposited on n-silicon substrate, and its photovoltaic response was measured. It showed increasing photoresponse with increasing concentration of copper sulphate.

  4. Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Shan, P.C.; Celik-Butler, Z.; Butler, D.P.; Jahanzeb, A.; Travers, C.M. [Department of Electrical Engineering, Southern Methodist University, Dallas, Texas 75275-0338 (United States); Kula, W.; Sobolewski, R. [Department of Electrical Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14627 (United States)

    1996-12-01

    We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection. For this study, four different structures were built with different types of buffer layers: YBaCuO on a Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. These films were all amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa{sub 2}Cu{sub 3}O{sub 6.5} and YBa{sub 2}Cu{sub 3}O{sub 6.3} thin films on a LaAlO{sub 3} substrate were included into the study. All six films exhibited semiconducting resistance versus temperature characteristics. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance (TCR) and the inherent noise characteristics of the temperature sensing element. The room temperature TCRs for all four amorphous films were greater than 2.5{percent} K{sup {minus}1}. The highest TCR of 4.02{percent} K{sup {minus}1} was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO{sub 2} layer. The TCR of the tetragonal films, on the other hand, remained 2{percent} K{sup {minus}1} or less in the same temperature range. Noise measurements performed in the 1{endash}100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. The Johnson and 1/{ital f} regions were clearly identified in the noise spectrum. From TCR and noise measurements, we estimated the amorphous semiconducting YBaCuO bolometers would have a responsivity as high as 3.8{times}10{sup 5} V/W and a detectivity as high as 1.6{times}10{sup 9} cmHz{sup 1/2}/W for 1 {mu}A bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure. {copyright} {ital 1996 American Institute of Physics.}

  5. Effect of annealing temperature on structural, optoelectronic properties and interband transitions of CuCrO{sub 2} nanocrystalline films prepared by the sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Han, Meijie; Wang, Jun [School of Electrical Engineering, Shanghai Dianji University, Shanghai 201306 (China); Deng, Qinglin; Wang, Junyong; Li, Wenwu; Zhang, Peng; Li, Chuanqing [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Hu, Zhigao, E-mail: zghu@ee.ecnu.edu.cn [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

    2015-10-25

    Transparent conductive CuCrO{sub 2} oxide films were prepared on sapphire substrates by the sol–gel method using copper (II) acetate monohydrate and chromium (III) nitrate hydrate as raw materials. The highly c-axis orientation and optical transparency (60–80%) in the visible region were obtained. The microstructure, vibration modes, optical and electrical transport properties as a function of annealing temperatures have been systematically discussed. With increasing annealing temperature, the crystalline quality and the c-axis orientation of CuCrO{sub 2} films were improved, which induced the increase of Raman phonon amplitude with the decrease of the linewidth. But the film compactness and density decrease with the increase of average particle size. In order to study the intrinsic mechanism of the optical response behavior, a three-phase layered structure (air/film/substrate) was applied to simulate the transmittance spectra of CuCrO{sub 2} films. Three electronic transitions can be uniquely assigned and it is found that the direct transitions are the dominant effect for CuCrO{sub 2} optical properties. The temperature dependence of electrical conductivity was studied and the electrical conduction mechanisms of the thermal activation behavior and the three-dimensional variable range-hopping transport were observed. In addition, the conductivity of CuCrO{sub 2} films decreases with increasing annealing temperature induced by its microstructure and the grain boundary scattering. Thus, the film annealed at 600 °C has the largest electrical conductivity of 0.49 S m{sup −1} at room temperature. The present results could be crucial and provide theoretical support for future applications of p-type semiconductor and optoelectronic devices. - Highlights: • Films with highly c-axis orientation and optical transparency (60–80%). • Three electronic transitions were uniquely assigned. • The direct transitions are the dominant effect for CuCrO{sub 2} optical

  6. Compositional dependence of Raman scattering and photoluminescence emission in Cu-Ga-Se films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Grossberg, M., E-mail: mgross@staff.ttu.e [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Siebentritt, S. [Universite du Luxembourg, 162a avenue de la Faiencerie, L-1511 Luxembourg (Luxembourg); Albert, J. [Helmholtz Centre Berlin, Glienicker Strasse 100, 14109 Berlin (Germany)

    2009-07-01

    This paper presents Raman scattering and photoluminescence (PL) analysis of polycrystalline Cu-Ga-Se films grown epitaxially on the GaAs substrate. In the compositional dependence of the Raman spectra of the CuGaSe{sub 2} films, the appearance of the ordered vacancy compounds (OVCs) CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} was observed. The dominating A{sub 1} Raman modes were detected at 185, 166 and 159 cm{sup -1}, respectively. The PL bands of CuGaSe{sub 2}, CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} at T=10 K were detected at 1.615, 1.72 and 1.76 eV, respectively. The dominating PL emission channel is the band-to-tail (BT) type recombination.

  7. Studies of non-vacuum processing of Cu-chalcogenide thin films.

    Science.gov (United States)

    El Hamri, E; Meddah, M; Boulkadat, L; Elfanaoui, A; Bouabid, K; Nya, M; Portier, X; Ihlal, A

    2012-08-01

    Cu-chalcogenide thin films were prepared using a two stage method: one step electrodeposition of CuISe and CIGSe, and the sulfurisation of CISe to prepare CISSe thin films. The films were deposited on different substrates: Mo and ITO coated glass. The optimum potentials for electrodeposition of CISe and CIGSe films were respectively selected in the range -400 to -550 mV and -650 to -700 mV (vs. SCE). The electrodeposited layers were firmly adhesive. The well known chalcopyrite structure appears after annealing at 400 degrees C under Argon for CISe. The band gap value deduced from the optical measurements is close to 1 eV. To increase this value, addition of gallium in the aqueous electrolytic solution was performed. A band gap value as high as 1.26 eV was recorded on the obtained CIGSe films. Sulfurisation of CISe layers under 5% H2S/Ar atmosphere lead to a shift of the position of the principal XRD peaks indicating the substitution of selenium atoms by sulfur atoms and thus the formation of the quaternary CISSe. Optical measurements performed on this quaternary compound show that our films exhibit a band gap value scaling from 1 eV to 1.4 eV depending on the amount of sulphur incorporated into the layers during the heat treatments.

  8. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang, E-mail: liuqf@lzu.edu.cn

    2015-03-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra.

  9. Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

    Science.gov (United States)

    Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

    2014-03-28

    In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

  10. Se activity and its effect on Cu(In,Ga)Se{sub 2} photovoltaic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, Miguel A.; Repins, Ingrid; Metzger, Wyatt K.; Romero, Manuel [National Renewable Energy Laboratory, Golden, CO (United States); Abou-Ras, Daniel [Hahn-Meitner-Institut Berlin (Germany)

    2009-05-15

    We study some physical properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin-films fabricated by evaporation from elemental sources under various Selenium environments. Specifically, thin-films were fabricated under growth conditions such as Se deficiency, near stoichiometry and excess Se during coevaporation to investigate the impact of the Se environment on absorber film properties and ultimately the device performance. We determine the chemical activity of Se in the evaporation process has a strong influence on film macrostructure (prefered orientation) and microstructure, particularly at the grain and grain boundary level. It is shown that the optoelectronic properties at grain boundaries are affected by the Se environment used resulting in absorber thin-films with distinctive defect distribution and defect density. Consequently, the performance of the solar cells fabricated from those films is also affected by the Se environment. These effects on solar cell performance and absorber properties are reported in a (i) structural analysis of the CuIn{sub 1-x}Ga{sub x}Se{sub 2}/Mo/glass samples by X-ray and electron backscattering techniques; (ii) optolectronic radiative characteristics of the absorbers by cathode luminescence and photoluminescence studies and (iii) current-voltage, quantum efficiency and capacitance-voltage measurements for the solar cells made from the absorbers fabricated under the pre prescribed Se growth conditions. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. 电感器用Ni-Cu-Zn铁氧体薄膜的设计与性能研究%Design and Performance of Ni-Cu-Zn Ferrite Film for Inductor

    Institute of Scientific and Technical Information of China (English)

    范跃农; 冯则坤; 陈中艳; 龚荣洲

    2012-01-01

    Ni-Cu-Zn ferrite inductor film was fabricated by screen print technology, and its performances were in-vestigated. XRD results suggest that the as-prepared thin films exhibit the same crystalline structure. The results show that after introducing of ferrite film, the inductance increases by 30%, the quality factor is improved, and the resonance frequency decrease. Ferrite inductor thin films annealed at 400℃ exhibit an optimum performance with high quality at 50 MHz, inductance increased by 27%, the quality factor increased by 39%.%采用丝网印刷技术制备Ni-Cu-Zn铁氧体电感器薄膜,并对其性能进行了表征.XRD分析表明,铁氧体薄膜具有相同的晶格结构.研究结果表明,在引入了铁氧体薄膜后,电感器的电感量相对于空心电感器有30%左右的提高,品质因数依频率不同有所改善,共振频率有所降低,经400℃后处理的薄膜电感器在低频时性能最好,50 MHz时电感量提高了27%,品质因数提高了39%.

  12. Structural and superconducting properties of ion beam sputtered Nb thin films and Nb/Cu bilayers

    Science.gov (United States)

    Nath, S. K.; Dhawan, R.; Rai, S.; Lodha, G. S.; Sokhey, K. J. S.

    2012-01-01

    We present the results of a study of structural and superconducting properties of polycrystalline Nb thin films (200 Å, 300 Å, 400 Å, 700 Å and 1000 Å) and Nb/Cu bilayers (300 Å/300 Å and 400 Å/300 Å) prepared on Si substrates by ion beam sputtering at room temperature. The thicknesses, roughnesses at the surfaces and interfaces were determined by X-ray reflectivity whereas the grain sizes were determined from grazing incidence X-ray diffraction and transmission electron microscopic studies. The superconducting transition temperature ( T C) of Nb thin films are smaller than T C of bulk Nb. The Nb-200 Å sample does not show T C down to 2.3 K. The average size of the grains varies from 42 Å for Nb-200 Å sample to 69 Å for Nb-1000 Å sample. Our results show that the T C in these polycrystalline films is not only limited by its thickness but also by the size of the grains. The Nb films deposited in situ on the Cu layer (Nb/Cu) show a marginal increase in average sizes of the grains as compare to their respective values in Nb films of same thicknesses. As a result a marginal increase in T C of these films is also observed. The maximum decrease in T C due to oxygen intake during deposition should be about 0.5 K from its bulk value (9.28 K). We have attributed the large decrease in T C in our case on the basis of decrease in the Debye temperature and density of states at the Fermi level for Nb thin films as compared to their respective values for bulk Nb.

  13. Study of NiCuZn ferrite powders and films prepared by sol-gel method

    Institute of Scientific and Technical Information of China (English)

    Gao Liang-Qiu; Yu Guo-Jian; Wang Ying; Wei Fu-Lin

    2011-01-01

    This paper reports that a series of NiCuZn ferrite powders and films are prepared by using sol-gel method. The effects of raw material composition and the calcinate temperature on magnetic properties of them are investigated. The NiCuZn ferrite powders are prepared by the self-propagating high-temperature synthesis method and subsequently heated at 700 ℃~1000 ℃. The results show that NiCuZn ferrite powders with single spinel phase can be formed after heat-treating at 750 ℃. Powders obtained from Nio.4Cuo.2Zno.4Fe1.9O4 gel have better magnetic properties than those from gels with other composition. After heat-treating at 900 ℃ for 3 h, coercivity Hc and saturation magnetization Ms are 9.7 Oe (1 Oe = 80 A/m) and 72.4 emu/g, respectively. Different from the powders, NiCuZn films produced on Si (100) from the Ni0.4Cu0.2Zn0.4Fe2O4 gel formed at room temperature possess high properties. When heat-treating condition is around 600 ℃ for 6 min, samples with low Hc and high Ms will be obtained. The minimal Hc is 16.7 Oe and Ms is about 300 emu/cm3. In comparison with the films prepared through long-time heat treating, the films prepared through short heat-treating time exhibits better soft magnetic properties.

  14. Trap and recombination centers study in sprayed Cu2ZnSnS4 thin films

    Science.gov (United States)

    Courel, Maykel; Vigil-Galán, O.; Jiménez-Olarte, D.; Espíndola-Rodríguez, M.; Saucedo, E.

    2014-10-01

    In this work, a study of trap and recombination center properties in polycrystalline Cu2ZnSnS4 thin films is carried out in order to understand the poor performance in Cu2ZnSnS4 thin film solar cells. Thermally stimulated current has been studied in Cu2ZnSnS4 deposited by pneumatic spray pyrolysis method using various heating rates, in order to gain information about trap centers and/or deep levels present within the band-gap of this material. A set of temperature-dependent current curves revealed three levels with activation energy of 126 ± 10, 476 ± 25, and 1100 ± 100 meV. The possible nature of the three levels found is presented, in which the first one is likely to be related to CuZn antisites, while second and third to Sn vacancies and SnCu antisites, respectively. The values of frequency factor, capture cross section, and trap concentration have been determined for each center.

  15. Synthesis and characterization of CuInSe{sub 2} thin films from Cu, In and Se stacked layers using a closed graphite box

    Energy Technology Data Exchange (ETDEWEB)

    Adurodija, F.O.; Carter, M.J.; Hill, R. [Newcastle Photovoltaics Applications Centre, University of Northumbria, Newcastle upon Tyne (United Kingdom)

    1996-07-18

    Various techniques have been used to produce CuInSe{sub 2}, but the problem of producing films with the desired properties for efficient device fabrication over large areas has always persisted. The Stacked Elemental Layer (SEL) technique has been demonstrated as a method for producing films over a large area, but the films normally annealed in vacuum or in Se ambient, mostly exhibited poor morphology with small grain sizes which result in poor devices. A method of synthesizing CuInSe{sub 2} films by annealing or selenization of the Cu, In and Se elemental layers using a closed graphite box was developed. SEM, EDX, XRD, spectrophotometric and Hall measurements were used to characterize all annealed films. Results have shown single phase chalcopyrite films with improved crystal sizes of about 4 {mu}m. The film composition varied from Cu-rich to In-rich with electrical resistivities of 10{sup -3} to 10{sup 4} {Omega}cm, carrier concentrations of 5x10{sup 15} to 10{sup 17} cm{sup -3} and mobilities of 0.6 to 7.8 cm{sup 2} V{sup -1} s{sup -1}. An energy band gap of 0.99 eV and 1.02 eV was obtained for a Cu-rich and near stoichiometric In-rich films respectively. Heterojunction devices using the structure ZnO/CdS/CuInSe{sub 2} were fabricated with electrical conversion efficiencies of 6.5%

  16. Sputtered CdTe thin film solar cells with Cu{sub 2}Te/Au back contact

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yongseob [Department of Photoelectronics Information, Chosun College of Science and Technology, Pilmudaero 309-1, Dong-gu, Gwangju 501-744 (Korea, Republic of); Lee, Suho; Yi, Junsin; Choi, Byung-Duck [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College, Daehak-ro 57, Nam-gu, Ulsan 680-749 (Korea, Republic of); Lee, Jaehyeong, E-mail: jaehyeong@skku.edu [School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    In this work, Cu{sub 2}Te/Au back contact for CdTe thin film solar cells were prepared by vacuum evaporation. Influence of annealing temperature on the structure and electrical properties of Cu{sub 2}Te films were investigated by field emission scanning electron microscope, X-ray diffraction, and Hall effect measurement. Also, CdS/CdTe thin film solar cells were fabricated by magnetron sputtering process, which is favorable for large area deposition and mass production, and the photovoltaic characteristics were studied. As the annealing temperature was increased, the crystal structure transformed from Cu{sub 2}Te for as-deposited film to Cu{sub 2−x}Te hexagonal phase, and the grains in the film became bigger. The electrical resistivity was slightly higher by the annealing. The cell efficiency was significantly improved by the heat treatment, and showed a maximum value of 9.14% at 180 °C. From these results, Cu{sub 2}Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film. However, further increase of annealing temperature caused the deterioration of cell performance. - Highlights: • Annealing effects of the vacuum evaporated Cu{sub 2}Te films were investigated. • The transformation from Cu{sub 2}Te to Cu{sub 2−x}Te hexagonal phase occurred by annealing. • The performance of the solar cell was highly increased by annealing at 180 °C. • Cu{sub 2}Te/Au contact acts as the proper pseudo-ohmic contact onto CdTe film.

  17. Preparation and photocharacterization of Cu-Sb-Se films by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, A.M. [Departamento de Materiales Solares (CIE-UNAM), Centro de Ivestigacion en Energia, Temixco, Morelos 62580 (Mexico); Turner, J.A. [National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401 (United States)

    2003-09-15

    Ternary semiconductor Cu-Sb-Se films were grown on 304 stainless-steel/Cr and ITO-glass using a combination of electrodeposition and chemical bath techniques. The samples were annealed in a N{sub 2} atmosphere at various temperatures and characterized by X-ray, electron probe microanalysis, current-voltage, capacitance-voltage and photocurrent spectroscopy. Photoelectrochemical studies were used to determinate the flat-band potential and the doping density of the material. These data lead to energetic considerations on the applicability of the Cu-Sb-Se electrode in the photoelectrochemical decomposition of water.

  18. The effects of heat treatments on the transport properties of Cu/x/S thin films

    Science.gov (United States)

    Hmurcik, L.; Allen, L.; Serway, R. A.

    1982-12-01

    The resistivity and Hall effect of Cu(x)S (x = 1.995-2) thin films, which are used in the CdS/Cu(x)S solar cell currently investigated as an alternate source of electrical energy, has been measured as a function of temperature and heat treatment time. It is found that initial heat treatments cause copper in grain boundaries to diffuse irreversibly into the bulk. Further heating in hydrogen causes the resistivity to increase and the charge density and the mobility to decrease as surface oxides break up and free copper diffuses into the copper sulfide. Heating in oxygen reverses this process.

  19. Defect levels in CdS/CuInSe/sub 2/ thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ramanathan, V.; Noufi, R.; Powell, R.C.

    1988-02-15

    Thermally stimulated capacitance spectroscopy has been employed to study the defect levels in high-efficiency, CdS/CuInSe/sub 2/ thin-film solar cells. Voltage bias changes were used to probe the majority-carrier traps and light bias was employed, for the first time, to reveal minority-carrier traps. The light bias thermally stimulated capacitance has shown the presence of a distribution of electron trapping levels in CuInSe/sub 2/. The capacitance under steady illumination shows that the traps produce a large photocapacitance. The implications of these observations in terms of device performance is discussed.

  20. Tailoring the Composition and Properties of Sprayed CuSbS2 Thin Films by Using Polymeric Additives

    Directory of Open Access Journals (Sweden)

    Ionut Popovici

    2012-01-01

    Full Text Available CuSbS2 thin films were obtained by spray pyrolysis deposition, using polymeric additives for controlling the surface properties and film’s composition. Ternary crystalline chalcostibite compounds have been obtained without any postdeposition treatments. XRD spectra and IR spectroscopy were used to characterize films composition and interactions between components. Films morphology and surface energy were investigated using AFM microscopy and contact angle measurements. Hydrophobic and hydrophilic polymers strongly influence the composition and film morphology.

  1. Optimization of large area YBa sub 2 Cu sub 3 O sub 7-x films by single target ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Gauzzi, A.; Lucia, M.L.; Affronte, M.; Pavuna, D. (Inst. for Micro- and Optoelectronics, Swiss Federal Inst. of Tech. (EPFL), Lausanne (Switzerland))

    1991-12-01

    We report on the in-situ growth over large area of high-quality homogeneous YBa{sub 2}Cu{sub 3}O{sub 7-x} films by single target ion beam sputtering. The '123' stoichiometry transfer to the substrates is obtained by using sufficiently low power ion beam and a grazing angle between the ion beam and the target. The as-deposited films show consistent homogeneity and reproducible superconducting properties ({Delta}Tc<1 K, j{sub c}(77K)>10{sup 6} A cm{sup -2} at 77K) over areas larger than {approx equal}30 cm{sup 2}. (orig.).

  2. STM/STS studies on YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films treated with an atomic oxygen beam

    Energy Technology Data Exchange (ETDEWEB)

    Ueno, Shigehiro; Kashiwaya, Satoshi; Terada, Norio; Tanaka, Yukio; Tanuma, Yasunari; Koyanagi, Masao; Obara, Kozo

    2003-05-15

    The surface electronic states of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films are studied by scanning tunneling microscopy/spectroscopy at 10 K. In order to improve the sample surface quality, we have developed a vacuum transfer system combined with an atomic oxygen beam. The conductance spectra of the YBCO films showed the gap structure in most area of the surface, which indicates the successful surface treatment in the present system. The spatial variation of electronic states observed near a step structure suggests the presence of interference effect of the d-wave pair potential induced by surface roughness.

  3. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  4. Experimental Study of the Plasma Fluorination of Y-Ba-Cu-O Thin Films

    Institute of Scientific and Technical Information of China (English)

    李琴; 傅泽禄; 吉争鸣; 冯一军; 康琳; 杨森祖; 吴培亨; 王晓书; 叶宇达

    2002-01-01

    We have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF4plasma. The intensity of the plasma fluorination was controlled by changing the liasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, we believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions.

  5. Experimental study of the plasma fluorination of Y-Ba-Cu-O thin films

    CERN Document Server

    Li Qi; Ji Zheng Ming; Feng Yi Jun; Kang Lin; Yang Sen Zu; Wu Pei Heng; Wang Xiao Shu; Ye Yuda

    2002-01-01

    The authors have experimentally studied the surface modifications of Y-Ba-Cu-O (YBCO) thin films using CF sub 4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructural analyses reveal that the oxygen content of the YBCO thin films was changed. Transport measurements of sufficient fluorinated YBCO films imply that the films changed totally into an oxygen-deficient semi-conducting state. From these experimental results, the authors believe that plasma fluorination is quite a useful method to form controllable a thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions

  6. Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Akkad, Fikry [Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Abdulraheem, Yaser [Department of Electrical Engineering, College of Engineering and Petroleum, Kuwait University, Safat 13060 Kuwait (Kuwait)

    2013-11-14

    We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

  7. Preparation of Cu2 0 Film and Its Photocatalytic Activity%Cu20薄膜的制备及其光催化活性

    Institute of Scientific and Technical Information of China (English)

    陈善亮; 应鹏展; 顾修全; 张伦; 王晶

    2011-01-01

    在不同水浴温度下通过电化学法在阴极导电玻璃上电沉积制备Cu2 O薄膜.XRD 和SEM 分析表明,水浴温度对制备Cu2 O薄膜的形貌、晶体粒径和晶向有重要影响.光吸收谱显示Cu2 O薄膜在可见光范围内具有较好的光吸收性能.光催化降解实验表明:在可见光下,Cu2 O薄膜对罗丹明B的降解具有较强的光催化活性;当水浴温度为50 C时,制备的具有(111)晶面的Cu2 O薄膜的光催化活性最高,反应时间为2.5 h时罗丹明B降解率可达60%;Cu2 O薄膜在重复使用4 次后,罗丹明B降解率仍可达到40%.%Cu2O film was prepared on conductive glass of cathode by electro deposition at different water bath temperature. The analysis results of XRD and SEM indicate that water bath temperature has an important influence on the surface morphology, the crystallite size and the crystallographic direction of the prepared Cu2O film. The optical absorption spectra show that the photo absorption capability of Cu2 O film is good under visible light. The results of photocatalytic degradation experiment show that: Under visible light, the obtained Cu2O film has a good photocatalytic activity on the degradation of rhodamine B; When the water bath temperature is 50℃, the photocatalytic activity of the prepared Cu2O film with ( 111 ) crystal face is the highest; The degradation rate of rhodamine B can reach 60% when the reaction time is 2. 5 h, and still can reach 40% after the Cu2O film is reused for 4 times.

  8. CuInSe{sub 2} films prepared by three step pulsed electrodeposition. Deposition mechanisms, optical and photoelectrochemical studies

    Energy Technology Data Exchange (ETDEWEB)

    Caballero-Briones, F., E-mail: fcaballerobriones@ub.edu [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Palacios-Padros, A. [Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Sanz, Fausto, E-mail: fsanz@ub.edu [Institute for Bioengineering of Catalonia (IBEC), Edifici Helix, Baldiri i Reixac 15-21, 08028 Barcelona (Spain); Department of Physical Chemistry, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Campus Rio Ebro Edificio I-D, Bloque 5, 1a planta, C/Poeta Mariano Esquillor s/n, 50018 Zaragoza (Spain)

    2011-11-01

    p-Type semiconducting copper indium diselenide thin films have been prepared onto In{sub 2}O{sub 3}:Sn substrates by a recently developed pulse electrodeposition method that consists in repeated cycles of three potential application steps. The Cu-In-Se electrochemical system and the related single component electrolytes were studied by cyclic voltammetry to identify the electrode processes and study the deposition processes. In situ atomic force microscopy measurements during the first 100 deposition cycles denote a continuous nucleation and growth mechanism. Particles removed by film sonication from some of the films were characterized by transmission electron microscopy and determined to consist in nanoscopic and crystalline CuInSe{sub 2}. The remaining film is still crystalline CuInSe{sub 2}, as assessed by X-ray diffraction. The chemical characterization by combined X-ray photoelectron spectroscopy, X-ray fluorescence and inductively coupled plasma optical emission spectroscopy, showed that films were Cu-poor and Se-poor. Raman characterization of the as-grown films showed that film composition varies with film thickness; thinner films are Se-rich, while thicker ones have an increased Cu-Se content. Different optical absorption bands were identified by the analysis of the UV-NIR transmittance spectra that were related with the presence of CuInSe{sub 2}, ordered vacancy compounds, Se, Cu{sub 2-x}Se and In{sub 2}Se{sub 3}. The photoelectrochemical activity confirmed the p-type character and showed a better response for the films prepared with the pulse method.

  9. Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

    Directory of Open Access Journals (Sweden)

    Tai-Hsiang Lui

    2015-01-01

    Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

  10. Molecular dynamics simulation of Cu-Zr-Al metallic-glass films under indentation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yun-Che, E-mail: yunche@mail.ncku.edu.tw; Wu, Chun-Yi

    2014-06-30

    In this paper, the (Cu{sub 50}Zr{sub 50}){sub 100-x}Al{sub x} (X = 0, 2, 4, 5, 6, 8, 10, 12, atomic percent) metallic-glass thin films on the titanium crystalline substrate were constructed by using molecular dynamics (MD) to simulate sputter deposition. The deposition simulations adopted a tight-binding potential with consideration of argon working gas from the pair-wise Moliere potential. The as-deposited films were amorphous and used as initial structures for nano-indentation simulations with a right-angle conical indenter tip to obtain their mechanical properties. All simulations were carried out at temperature 300 K to compare with experimental data. The radial distribution function of the film is calculated and compared with synchrotron experimental data. From the nanoindentation simulations, the hardness and Young's modulus of the films were calculated, as well as the pileup index under two different depth-to-thickness ratios. Our MD simulation results are consistent with experimental data. Furthermore, atomic strains were calculated to reveal deformation localization. In addition, elastic constants of the film and associated degrees of elastic anisotropy were studied to correlate structural anisotropy and to reveal structural relaxation. It is found that the deposited and MD-equilibrated films have notable anisotropic elastic constants, and their relaxation can be observed at the MD time scales. - Highlights: • Cu-Zr-Al metallic-glass thin films are prepared by sputter deposition simulations. • Metallic-glass films are characterized by molecular dynamics simulations. • Atomic structures are compared with synchrotron experiment. • Strain and elastic constants are studied in relation to structural relaxation.

  11. Cu2ZnSnSe4 thin films prepared by selenization of one-step electrochemically deposited Cu-Zn-Sn-Se precursors

    Science.gov (United States)

    Meng, Mingming; Wan, Lei; Zou, Peng; Miao, Shiding; Xu, Jinzhang

    2013-05-01

    In this research a non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step electrochemically prepared Cu-Zn-Sn-Se precursors. The Cu-Zn-Sn-Se precursor films were prepared by electrochemical deposition from electrolytes containing CuSO4, ZnSO4, SnCl4 and H2SeO3, and the substrate is a Mo coated soda-lime glass. The CZTSe thin films were obtained by annealing the electrochemically deposited films in the selenium vapors at the temperature of 550 °C. The crystal phases, micro-structures, chemical compositions and optical properties of CZTSe films have been studied by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), inductively coupled plasma optical emission spectrometer (ICP-OES), Raman scattering spectrum, and UV-vis absorption spectroscopic means. The results revealed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 3:70:20:3 yields nearly pure phase of kesterite, and a band gap of 0.94 eV was determined by spectroscopic measurements.

  12. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  13. The structural, transport and optical properties of screen printed Cu[sub x]S thick films

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, P.J.; Gomez-Daza, O.; Campos, J.; Banos, Leticia; Nair, P.K. (Photovoltaic Systems Group, Lab. de Energia Solar IIM, UNAM, Morelos (Mexico))

    1994-02-01

    The structural, transport and optical properties of screen printed Cu[sub x]S thick films with possible application in photovoltaic and photothermal devices are reported. The X-ray diffraction studies show that the screen printed films are stable up to about 220[sup o]C in air and belong to the Cu[sub x]S structure. Above this temperature it decomposes mainly to CuSO[sub 4]. The electrical conductivity depends on the sintering temperature and the amount of flux, Cu(NO[sub 3])[sub 2], used in the paste for screen printing. The differential scanning calorimetry studies reveal the phase changes occurring during heating and pertaining to the dependence of electrical conductivity on the sintering temperature. A configuration consisting of screen printed Cu[sub x]S on chemically deposited and annealed (at 200[sup o]C) CdS thin film exhibited rectification

  14. Some physical parameters of CuInGaS2 thin films deposited by spray pyrolysis for solar cells

    Science.gov (United States)

    Kotbi, Ahmed; Hartiti, Bouchaib; Fadili, Salah; Ridah, Abderraouf; Thevenin, Philippe

    2017-05-01

    Copper-indium-gallium-disulphide (CuInGaS2) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS2 (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS2 films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm^{-1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E_Tail) of CuInGaS2 thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS2 make them an attractive material for photovoltaic devices.

  15. Some physical parameters of CuInGaS{sub 2} thin films deposited by spray pyrolysis for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kotbi, Ahmed [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Hartiti, Bouchaib; Fadili, Salah [Hassan II Casablanca University, MAC and PM Laboratory, ANEPMAER Group, FSTM, Mohammedia (Morocco); Ridah, Abderraouf [Hassan II Casablanca University, LIMAT Laboratory, Department of Physics, FSB, Casablanca (Morocco); Thevenin, Philippe [University of Lorraine, LMOPS Laboratory, Department of Physics, Metz (France)

    2017-05-15

    Copper-indium-gallium-disulphide (CuInGaS{sub 2}) is a promising absorber material for thin film photovoltaic. In this paper, CuInGaS{sub 2} (CIGS) thin films have been prepared by chemical spray pyrolysis method onto glass substrates at ambient atmosphere. Structural, morphological, optical and electrical properties of CuInGaS{sub 2} films were analysed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV-Vis spectrophotometer and Hall Effect measurement, respectively. The films exhibited single phase chalcopyrite structure. The strain and dislocation density decreased with increase of spray time. The grain size of the films increased from 4.45 to 9.01 nm with increase of spray time. The Raman spectrum indicated the presence of the principal chalcopyrite peak at 295 cm{sup -1}. The optical properties of the synthesized films have been carried out through the measurement of the absorbance spectrum. The optical band gap was estimated by the absorption spectrum fitting (ASF) method. For each sample, the width of the band tail (E{sub Tail}) of CuInGaS{sub 2} thin films was determined. The resistivity (ρ), conductivity (σ), mobility (μ), carrier concentration and conduction type of the films were determined using Hall Effect measurements. The interesting optical properties of CuInGaS{sub 2} make them an attractive material for photovoltaic devices. (orig.)

  16. Formation of CuAlO2 Film by Ultrasonic Spray Pyrolysis

    Science.gov (United States)

    Iping, S.; Lockman, Zainovia; Hutagalung, S. D.; Kamsul, A.; Matsuda, Atsunori

    2011-10-01

    Smooth, crack free and homogenous CuAlO2 film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO3)2.3H2O and 90 mmol Al(NO3)3.9H2O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO2 can be detected for samples prepared by spraying the precursor mist at temperature of > 550 °C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO2.

  17. Formation of CuAlO{sub 2} Film by Ultrasonic Spray Pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Iping, S; Lockman, Zainovia; Hutagalung, S D [School of Materials and Mineral Resources, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang (Malaysia); Kamsul, A [Gadjah Mada University, Faculty of Mathematics and Natural Resources, Department of Physics, Sekip Utara Bulaksumur 55281 Yogyakarta (Indonesia); Matsuda, Atsunori, E-mail: zainovia@eng.usm.my [Toyohashi University of Technology, Faculty of Engineering, Department of Materials Science, 1-1 Hibarigaoka, Tempakucho, Toyohashi-shi, Aichi 441-8580 (Japan)

    2011-10-29

    Smooth, crack free and homogenous CuAlO{sub 2} film was produced by chemical solution deposition process via spray pyrolysis technique on a cleaned Si substrate. The precursor solution used was comprised of a mixture of 45.87 mmol Cu(NO{sub 3}){sub 2}.3H{sub 2}O and 90 mmol Al(NO{sub 3}){sub 3}.9H{sub 2}O at ratio of Cu:Al = 1.2:1. The precursor solution was placed in a mist chamber and was atomized by a nebulizer to produce precursor mist. The precursor mist was then carried out by Ar gas and was sprayed onto a heated Si. Two main parameters were studied: the distance between the nozzle of the precursor mist chamber and the Si and the temperature of the Si substrate. It appears that from the XRD data, CuAlO{sub 2} can be detected for samples prepared by spraying the precursor mist at temperature of > 550 deg. C with distance between the nozzle and the substrate of 3cm. Reaction of the Cu and Al ions in the mist near the substrate may have promoted the crystallisation of CuAlO{sub 2}.

  18. Superconducting thin films of BiSrCaCuO made by sequential electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Steinbeck, J.; Anderson, A.C.; Tsauer, B.Y.; Strauss, A.J.

    1989-03-01

    Superconducting thin films of Bi/sub 2/Sr/sub 2/Ca/sub 1/Cu/sub 2/O/sub x/ have been made by sequential electron-beam evaporation of multiple layers of Bi and Cu metals and (Sr,Ca)F/sub 2/ on MgO substrates. The films were annealed at high temperature, first in wet O/sub 2/ and then in dry O/sub 2/, and cooled to room temperature in dry O/sub 2/. The resulting films which are -- 1 ..mu..m thick, have transition temperatures of -- 85 K. X-ray diffraction shows that the films are preferentially oriented with their c-axis perpendicular to the MgO substrate. The authors' best film has a zero-resistance temperature of 90 K and critical current densities of 8 x 10/sup 4/ A/cm/sup 2/ at 77 K and 2.5 x 10/sup 5/ A/cm/sup 2/ at 4.2 K.

  19. Dc and ac conductivity of amorphous CuInTe2 thin films

    Science.gov (United States)

    Viswanathan, S. K.; Amanullah, F. M.; Avadhani, S. S.; Gopalam, B. S. V.

    1992-02-01

    Dc and ac conductivity studies were made on a-CuInTe2 thin films deposited onto substrates held at liquid nitrogen temperatures. The dc results may be understood in terms of three modes of current paths, viz., hopping of carriers near the valence band tail, near an acceptor induced defect state and near the Fermi level at appropriate temperature ranges. A reasonable fit to the ac loss data could be made using the extended pair approximation due to Summerfield. Dc conductivity measurements were made using a two probe gap cell configuration. Thick Cu/In strips with well-defined parallel edges were deposited on the sample for electrical contacts. Film thicknesses ranged from 1500 to 6000 A. One electrode of the film was connected to a constant dc voltage source, and the other electrode was grounded through a Keithley 610 electrometer. The applied voltage was 5 V (corresponding to a field of 5 Vcm-1), which was well within the ohmic region of the film's I - V characteristics in the temperature region scanned. Cooling and warming up rates used in the measurements were of the order of 0.3 deg min-1. The current noise was below 10-15 A and the drift of the electrometer during the experiment was checked periodically. As deposited, all the films were p-type in nature as envisaged by the hot probe method.

  20. Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition

    Science.gov (United States)

    Lin, Y.; Chen, Y. B.; Garret, T.; Liu, S. W.; Chen, C. L.; Chen, L.; Bontchev, R. P.; Jacobson, A.; Jiang, J. C.; Meletis, E. I.; Horwitz, J.

    2002-07-01

    High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO)//(001LAO and 100]CCTO//[100LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film.

  1. Room Temperature Ferromagnetism and Structure of Zn_(1-x)Cu_xO Films Synthesized by Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    CHEN Xuemei; ZHUGE Lanjian; WU Xuemei; WU Zhaofeng

    2009-01-01

    Zn_(1-x)Cu_xO thin films were synthesized by the radio frequency (RF) magnetron sputtering technique using a ZnO target containing different pieces of small Cu-chips.X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to analyze the crystalline and microstructure of the film,and X-ray photoelectron spectroscopy (XPS) was used to establish the bonding characteristics and oxidation states of copper inside the ZnO host.Room temperature (RT) ferromagnetism was observed in the Zn_(1-x)Cu_xO films by a Quantum Design superconducting quantum interference device (SQUID) and the saturation magnetic moment of the films was found to decrease with the increase in Cu content.

  2. Low Microwave Surface Resistance in NdBa2Cu3O7-d Films Grown by Molecular Beam Epitaxy

    OpenAIRE

    2004-01-01

    We report the growth of NdBa2Cu3O7-d films on (100) MgO substrate by Molecular Beam Epitaxy (MBE). Large area NdBa2Cu3O7-d films with homogeneous superconducting properties were grown by precise control of stoichiometry and the optimisation of growth parameters. The stoichiometric ratio of Nd:Ba:Cu close to 1:2:3 yields films with TC of 94 K and JC values above 3.5 MA/cm2 at 77 K on bare MgO substrate. The NdBa2Cu3O7-d films grown under optimised conditions had excellent in-plane texture and ...

  3. Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

    Science.gov (United States)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

  4. Hopping conduction in In-doped CuO thin films

    Science.gov (United States)

    Yildiz, A.; Horzum, Ş.; Serin, N.; Serin, T.

    2014-11-01

    Electrical transport properties of undoped and In-doped CuO thin films (1, 5 and 10 at. %) are investigated by mean of resistivity in the temperature range of 115-300 K. Electrical transport mechanism of films is explained on the basis of the variable-range hopping (VRH) conduction. Upon doping, appreciable changes are found in resistivity. Temperature dependent resistivity shows a complex correlation with increasing In concentration. This situation is well explained by fluctuations in the hopping distance and the density of states at the Fermi level.

  5. Barrier Formation on a YBa2Cu3Oy Thin Film Using CF4 Plasma Fluorination

    Institute of Scientific and Technical Information of China (English)

    阿巴斯; 康琳; 许伟伟; 杨森祖; 吴培亨

    2002-01-01

    We investigate the surface structure and composition ofa YBa2Cu3Oy (YBCO) thin film modified by CF4 plasma fluorination. In addition to the absorption of hydrocarbons, chemical reactions of the YBCO surface take place during CF4 plasma treatment. Various x-ray photoelectron spectroscopic data are reported and discussed. The existence of a thin barrier is confirmed, which homogeneously covers the edge of the base YBCO film in our interface engineering Josephson junction. Measurements of Auger electron spectroscopic data and the resistance versus temperature indicate that the barrier is a controllable-insulating layer.

  6. Cu2ZnSnS4 thin films solar cells: material and device characterization

    OpenAIRE

    2014-01-01

    Cu2ZnSnS4 (CZTS) quaternary compound has attracted much attention in the last years as new abundant, low cost and non-toxic material, with desirable properties for thin film photovoltaic (PV) applications. In this work, CZTS thin films were grown using two different processes, based on vacuum deposition of precursors, followed by a heat treatment in sulphur atmosphere. The precursors were deposited using two different approaches: (i) electron-beam evaporation of multiple stacks made of ZnS, S...

  7. Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

    Science.gov (United States)

    2010-03-01

    charge balance in this new compound. Figure 1 shows the x-ray pattern of a highly-oriented YBCNO film deposited on strontium titanale (STO) at 850 C...Ba2NbCuO5.5, although some minor misorientations appear. Micro-Raman spectra obtained at room temperature are shown in Fig. 2. Raman shifts were observed...at 295, 346, 383, 633, and 819 cm1 wave numbers. In comparing these spectra with the Raman spectra of an YBCO film, the main YBCO orthorhombic Raman

  8. Structural, photoelectrical characterization of Cu(InAl)Se2 thin films and the fabrication of Cu(InAl)Se2 based solar cells

    Science.gov (United States)

    Kavitha, B.; Dhanam, M.

    2013-01-01

    Films of Cu(InAl)Se2 were deposited onto glass substrates by SILAR (successive ionic layer adsorption and reaction) method. All the deposited films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (112), (220/204) and (116/312) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra showed a peak related to the band-to-band transition. The spectral response of Cu(InAl)Se2 thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 300 to 1200 nm. Films of higher thickness exhibited higher photosensitivity while lower thickness films exhibited moderate photosensitivity. Cu(InAl)Se2-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.

  9. Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

    2014-02-10

    Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

  10. Surfactant-assisted epitaxial growth and magnetism of Fe films on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Nino, M A; Camarero, J; Miguel, J J de; Miranda, R [Departamento de Fisica de la Materia Condensada and Instituto de Ciencia de Materiales ' Nicolas Cabrera' , Universidad Autonoma de Madrid, Cantoblanco, 28049-Madrid (Spain); Gomez, L [Facultad de Ciencias Exactas, IngenierIa y Agrimensura, Instituto de Fisica Rosario, 2000-Rosario (Argentina); Ferron, J [Instituto de Desarrollo Tecnologico para la Industria Quimica (CONICET-UNL), Departamento de Materiales, Facultad de IngenierIa Quimica, UNL, 3000 Santa Fe (Argentina)

    2008-07-02

    The magnetic properties of thin epitaxial layers of Fe grown on Cu(111) depend sensitively on the films' structure and morphology. A combination of experiments and numerical simulations reveals that the use of a surfactant monolayer (ML) of Pb during molecular beam epitaxy (MBE) growth at room temperature reduces the amount of interdiffusion at the Cu-Fe interface, retards the fcc-to-bcc transformation by about 2 ML and substantially increases the films' coercivity. The origin of all these alterations to the magnetic behavior can be traced back to the structural modifications provoked by the surfactant during the early growth stages. These results open the way for the controlled fabrication of custom-designed materials with specific magnetic characteristics.

  11. Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Technische Universitaet Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Niermann, Tore; Lehmann, Michael [Technische Universitaet Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2012-07-01

    Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.

  12. Corrosion inhibition of cobalt with a thin film of Cu-BTA

    Energy Technology Data Exchange (ETDEWEB)

    Brusic, V.; Frankel, G.S.; Schrott, A.G.; Petersen, T.A. (Thomas J. Watson Research Center, Yorktown Heights, NY (United States). IBM Research Division); Rush, B.M. (Univ. of California, Berkeley, CA (United States). Dept. of Chemical Engineering)

    1993-09-01

    Electrochemical techniques, ellipsometry and X-ray photoelectron spectroscopy were used to evaluate the use of benzotriazole, alone or in combination with boric acid/borate buffer and dilute copper sulfate for the protection of cobalt. The data indicate that in slightly alkaline solutions benzotriazole is a strong inhibitor for cobalt corrosion, whereas in water and neutral solutions it produces a barely measurable effect. In the presence of benzotriazole and Cu[sup +2] ions, spontaneous reduction of copper ions leads to the formation of a thin film of Cu-BTA on the cobalt surface. This film acts as a corrosion protector that is better than benzotriazole, with a significant reduction of the corrosion rate even during subsequent exposure to solutions without inhibitors.

  13. Chemical vapor deposition of Pd/Cu alloy films from a new single source precursor

    Science.gov (United States)

    Krisyuk, Vladislav V.; Shubin, Yuriy V.; Senocq, François; Turgambaeva, Asiya E.; Duguet, Thomas; Igumenov, Igor K.; Vahlas, Constantin

    2015-03-01

    Cu/Pd alloys were deposited onto Si(100) and SiO2 (fused silica) substrates by MOCVD from PdL2×CuL2, (L=2-methoxy-2,6,6-trimethylheptane-3,5-dionate), a new single source bimetallic precursor. Deposition was performed at 10 Torr in a temperature range between 200 °C and 350 °C and was assisted by vacuum ultraviolet (VUV) irradiation of the precursor vapor from an excimer Xe-lamp. It was shown that the elemental and phase composition of the films can be controlled by varying the deposition temperature and by stimulating by VUV the precursor decomposition. The bulk compositional properties of the obtained films confirmed the feasibility of proposed approach and precursor to prepare Pd alloy membrane materials by the CVD method.

  14. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  15. A Novel Regeneration Method of Cu(0)-deposited TiO2 Photocatalytic Film: Air-assisted Electrochemical Oxidation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A rapid deactivation of TiO2 film was observed in the process of the photocatalytic degradation of formic acid in the presence of Cu(II) due to the deposition of Cu(0). A novel regeneration method, air-assisted electrooxidation, could efficiently retrieve the photocatalytic activity of the deact ivated film. HNO3 medium has a regeneration extent of 97.2% for first run, much higher than that of HCl and H2SO4 mediums.

  16. Galvanic synthesis of Cu{sub 2−X}Se thin films and their photocatalytic and thermoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Amrita [Department of Chemistry, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103 (India); Kulsi, Chiranjit; Banerjee, Dipali [Department of Physics, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103 (India); Mondal, Anup, E-mail: anupmondal2000@yahoo.co.in [Department of Chemistry, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103 (India)

    2016-04-30

    Graphical abstract: - Highlights: • Cu{sub 2−X}Se thin film with cubic berzelianite phase was fabricated by galvanic deposition. • Cubic berzelianite phase was found to possess both direct and indirect band gaps of 2.9 and 1.05 eV respectively. • Cu{sub 2−X}Se thin films were found to be active visible light driven photocatalyst. • Thermoelectric property of Cu{sub 2−X}Se film was investigated and ZT value was found to be 0.07 at room temperature. - Abstract: Cu{sub 2−X}Se thin film with cubic berzelianite phase was prepared by a simple, low-cost two electrode electrochemical technique and the photocatalytic and thermoelectric properties of the thin films were investigated. The results showed that Cu{sub 2−X}Se crystallized in the cubic berzelianite phase and found to possess both direct and indirect band gaps of 2.9 and 1.05 eV respectively, covering almost the entire range of solar-spectrum. The photocatalytic discoloration of aqueous methylene blue (MB) and rose-bengal (RB) dyes over Cu{sub 2−X}Se thin films were investigated under visible light irradiation. Cu{sub 2−X}Se thin films showed higher catalytic activity for MB compared to RB in presence of H{sub 2}O{sub 2}. The photocatalytic discoloration followed first-order reaction kinetics. Complete removal of aqueous MB was realized after visible light irradiation for 150 min with Cu{sub 2−X}Se thin film catalyst in presence of H{sub 2}O{sub 2}. Thermoelectric performances through power factor and figure of merit have been evaluated. Carrier concentration obtained from thermoelectric power was used to evaluate the mobility of carriers from electrical conductivity measurement.

  17. Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

    Science.gov (United States)

    Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

    1992-03-01

    A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

  18. Zr–Cu thin film metallic glasses: An assessment of the thermal stability and phases’ transformation mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Steyer, P., E-mail: philippe.steyer@insa-lyon.fr [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Billard, A. [LERMPS-UTBM, Site de Montbéliard, 90010 Belfort Cédex (France); Joly-Pottuz, L.; Esnouf, C. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2015-01-15

    Highlights: • Binary Zr–Cu TFMGs with high glass-forming ability were fabricated. • Crystallization kinetics of Zr–Cu glassy films was studied. • Crystallization is governed by multi-stage step diffusion-controlled growth. • Films exhibit smooth and dense surface morphology and vein-like features. - Abstract: The PVD co-sputtering technology is an efficient way to deposit Zr–Cu thin film metallic glass in a wide composition range. The structural stability and crystallization behavior of metallic glass films are investigated by in situ X-ray diffraction (XRD) via heating up to 873 K. The glassy films within the 33.3–89.1 at.% Cu range maintained their amorphous structure at temperatures higher than 550 K. Within this chemical composition range, films exhibit a smooth and dense surface morphology with 100 nm-sized grains and vein-like features. Glassy films revealed a high thermal stability as reflected by differential scanning calorimetry experiments and in situ high temperature XRD analysis. It was found that the structure evolved with the temperature and copper contents from a highly textured {1 1 1} crystallized fcc-Zr to intermetallic CuZr{sub 2}, Cu{sub 10}Zr{sub 7}, Cu{sub 51}Zr{sub 14} phases to finally {1 1 1} crystallized fcc-Cu. Mechanisms involved in the structural changes of the glassy films together with the multi-stage crystallization process are discussed in the light of the copper contents.

  19. Hall effect in semiconducting epitaxial and amorphous Y-Ba-Cu-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shan, P.; Jahanzeb, A.; Butler, D.P.; Celik-Butler, Z. [Department of Electrical Engineering, Southern Methodist University, Dallas, Texas 75275 (United States); Kula, W.; Sobolewski, R. [Department of Electrical Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14627 (United States)

    1997-05-01

    An experimental study of the Hall effect in nonmetallic Y-Ba-Cu-O thin films is reported. Both epitaxial crystalline YBa{sub 2}Cu{sub 3}O{sub 6+x} (x{le}0.5) and multiphase/amorphous Y-Ba-Cu-O thin films were studied. The structure of the samples was measured by x-ray diffraction and Raman microprobe. The amorphous Y-Ba-Cu-O samples were found to have a grain size of about 100 {Angstrom}. The conduction properties were studied and analyzed for the two types of samples over a wide temperature range including room temperature. The Hall effect measurements showed positive charge carriers with a concentration ranging from 10{sup 17} to 10{sup 20} cm{sup {minus}3} at room temperature. The mobility was found to decrease with higher Hall carrier concentration. The empirical relationship for the mobility dependence on impurity concentration agreed with the relationship between mobility and the experimental Hall carrier concentration, suggesting that the same localized states were responsible for both providing the carriers and reducing the mobility through scattering. It was also observed that the mobility values for both amorphous and crystalline samples followed the same empirical curve, a result which showed that the conduction mechanisms in the epitaxial (tetragonal) and amorphous Y-Ba-Cu-O materials are very likely to be similar despite the differences in the composition and structure of the films. The similarity is consistent with other work that concludes that the conduction mechanism occurs along the copper oxide planes. Our work implies that the conduction mechanism operates over a short range, less than the 100 {Angstrom} grain size of the amorphous, such that the lack of order in the amorphous samples was essentially irrelevant to the charge transport. {copyright} {ital 1997 American Institute of Physics.}

  20. Photocatalytic degradation of methylene blue by TiO{sub 2}-Cu thin films: Theoretical and experimental study

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, Hudson W.P., E-mail: hudsonwpc@yahoo.com.br [Unesp - Univ. Estadual Paulista, Institute of Chemistry, 14801-970 Araraquara-SP (Brazil); Batista, Ana P.L. [University of Sao Paulo, Institute of Chemistry, 05508-000 Sao Paulo-SP (Brazil); Hammer, Peter [Unesp - Univ. Estadual Paulista, Institute of Chemistry, 14801-970 Araraquara-SP (Brazil); Ramalho, Teodorico C. [University Federal of Lavras, Chemistry Department, 37200-000 Lavras-MG (Brazil)

    2010-12-15

    Research highlights: {yields} The depth and surface Cu dopant concentration can be modulated by thermal treatment of TiO{sub 2}. {yields} H{sub 2}O{sub 2} can be degraded by TiO{sub 2} electron/hole pair as well as by Cu metallic and ionic species, trough of a Like-Fenton mechanism. {yields} The colorant degradation occurs due successive hydoxylations. - Abstract: In this work the effect of doping concentration and depth profile of Cu atoms on the photocatalytic and surface properties of TiO{sub 2} films were studied. TiO{sub 2} films of about 200 nm thickness were deposited on glass substrates on which a thin Cu layer (5 nm) was deposited. The films were annealed during 1 s to 100 deg. C and 400 deg. C, followed by chemical etching of the Cu film. The grazing incidence X-ray fluorescence measurements showed a thermal induced migration of Cu atoms to depths between 7 and 31 nm. The X-ray photoelectron spectroscopy analysis detected the presence of TiO{sub 2}, Cu{sub 2}O and Cu{sup 0} phases and an increasing Cu content with the annealing temperature. The change of the surface properties was monitored by the increasing red-shift and absorption of the ultraviolet-visible spectra. Contact angle measurements revealed the formation of a highly hydrophilic surface for the film having a medium Cu concentration. For this sample photocatalytic assays, performed by methylene blue discoloration, show the highest activity. The proposed mechanism of the catalytic effect, taking place on Ti/Cu sites, is supported by results obtained by theoretical calculations.

  1. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W.

    2004-11-04

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  2. CuInSe2 thin film solar cells synthesised from electrodeposited binary selenide precursors

    OpenAIRE

    Fischer, Johannes

    2012-01-01

    The box must contain a summary in a maximum of 1,700 characters, spaces included. The fabrication of a CuInSe2 thin film solar cell from an electrodeposited precursor stack consisting of indium selenide and copper selenide layers is demonstrated. A best conversion efficiency of 5.5% was achieved, a higher efficiency than previously reported in literature. The thesis focuses on three main parts: (i) electrochemistry of indium selenide: The incorporation of indium in the deposit require...

  3. Photoconducting Properties of Film Composites Based on Polyvinyl Butyral and Heterometallic Cu/Mo Complexes

    Science.gov (United States)

    Davidenko, N. A.; Kokozay, V. N.; Davidenko, I. I.; Buvailo, H. I.; Makhankova, V. G.; Studzinsky, S. L.

    2016-11-01

    We have synthesized and studied novel photosensitive polymer film composites based on non-photoconducting polyvinyl butyral doped with heterometallic Cu/Mo complexes. We have established that these composites have photoconducting and photovoltaic properties and are characterized by hole-type photoconductivity. The photocurrent and the photo-EMF are higher for composites in which complexes are used that have a shorter distance between nearest-neighbor metallic copper centers, which is explained by better conditions for transport of nonequilibrium holes.

  4. Fermi surface determination from wavevector quantization in LaSrCuO films

    Science.gov (United States)

    Ariosa, D.; Cancellieri, C.; Lin, P. H.; Pavuna, D.

    2008-03-01

    We have observed the wavevector quantization in LaSrCuO films thinner than 12 unit cells grown on SrTiO3 substrates. Low energy dispersions were determined in situ for different photon energies by angle resolved photoemission spectroscopy. From the wavevector quantization, we extract three dimensional dispersions within a tight-binding model and obtain the Fermi surface topology, without resorting to the nearly free-electron approximation. Such method can be extended to similar confined electron nanostructures.

  5. Carbon dioxide and water adsorption on highly epitaxial Delafossite CuFeO2 thin film

    Science.gov (United States)

    Rojas, S.; Joshi, T.; Borisov, P.; Sarabia, M.; Lederman, D.; Cabrera, A. L.

    2015-03-01

    Thermal programmed desorption (TPD) of CO2 and H2O from a 200 nm thick CuFeO2 Delafossite surface was performed in a standard UHV chamber, The CuFeO2 thin film grown using Pulsed Laser Deposition (PLD) over an Al2O3 (0001) substrate with controlled O2 atmosphere resulted with highly epitaxial crystal structure. The adsorption/desorption of CO2 and H2O process was also monitored with X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Our results revealed that carbon dioxide interacts with CuFeO2 forming Fe carbonates compounds on its surface. Hydroxides were also formed on the surface due to water presence. Using TPD data, Arrhenius plots for CO2 and water desorption were done and activation energy for desorption was obtained. Funds FONDECyT 1130372; Thanks to P. Ferrari.

  6. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  7. Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target

    OpenAIRE

    2013-01-01

    CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of...

  8. Präparation, strukturelle Charakterisierung und Transporteigenschaften epitaktischer Filme der Hochtemperatursupraleiter $Bi_{2}Sr_{2}CaCu_{2}O_{8+\\delta}$ und $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{10+\\delta}$

    CERN Document Server

    Wagner, P H

    1994-01-01

    Präparation, strukturelle Charakterisierung und Transporteigenschaften epitaktischer Filme der Hochtemperatursupraleiter $Bi_{2}Sr_{2}CaCu_{2}O_{8+\\delta}$ und $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{10+\\delta}$

  9. Cu{sub 2}ZnSnSb(S,Se,Te){sub 4} film formation from selenization of sputtered self-prepared single ceramic target

    Energy Technology Data Exchange (ETDEWEB)

    Tsega, Moges, E-mail: mogestsega@yahoo.com [Department of Physics, University of the Free State (Qwaqwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Kuo, Dong-Hau [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Dejene, F.B. [Department of Physics, University of the Free State (Qwaqwa campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa)

    2015-08-31

    Single-layered Cu{sub 2}ZnSnSb(S,Se,Te){sub 4}(CZTASSeTe) thin films were prepared on Mo/glass substrate by radio frequency magnetron sputtering of a self-prepared single ceramic target. Successive selenization for the as-deposited film at a substrate temperature of 200 °C in Se-atmosphere was performed at various temperatures between 400 °C and 600 °C for 1 h. Structural investigation of the grown films revealed single-phase tetragonal structure corresponding to kesterite CZTSSe. All measured samples were found to exhibit p-type conductivity. An improved grain size and crystal quality with suitable atomic ratio [Cu/(Zn + Sb + Sn) = 0.89, Zn/Sn = 1.15, and metal/(S + Se + Te) = 1.02] obtained for CZTASSeTe film selenized at 600 °C. The Hall concentration increased from 1.06 to 5.8 × 10{sup 17} cm{sup −3}, mobility increased from 2.82 to 44.3 cm{sup 2} V{sup −1} s{sup −1}, and resistivity decreased from 20.92 to 0.24 Ω cm as the precursor film is selenized to 600 °C. An enhanced Hall mobility can be ascribed to the larger grains with better crystallinity and composition in the selenized film at 600 °C. Our large grain size and maximized mobility for CZTASSeTe film at the selenization temperature of 600 °C from single ceramic target can be useful for the fabrication of the CZTASSeTe absorber layer. - Highlights: • Cu{sub 2}ZnSnSb(S,Se,Te){sub 4} thin films were deposited by sputtering single ceramic target. • Structural and electrical properties of the films are presented. • Properties of CZTASSeTe thin films were related to Se vaporization temperature. • Selenized film at 600 °C presents the best crystal quality and enhanced Hall mobility.

  10. Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

    Science.gov (United States)

    Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-02-08

    Copper antimony sulfide (CuSbS2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10(4) cm(-1)), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10(4) cm(-1), as well as a hole concentration of 10(15) cm(-3). Finally, the ALD-grown CuSbS2 films were paired with ALD-grown TiO2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS2/CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS2 thin films in environmentally benign photovoltaics.

  11. Opto-electronic properties of sputter-deposited Cu{sub 2}O films treated with rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hsieh, J.H. [Department of Materials Engineering, Ming-Chi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan (China)], E-mail: jhhsieh@mail.mit.edu.tw; Kuo, P.W.; Peng, K.C.; Liu, S.J. [Department of Materials Engineering, Ming-Chi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan (China); Hsueh, J.D.; Chang, S.C. [Institute of Microelectronics and Department of Electrical Engineering. Nation Cheng Kung University, Tainan 70101, Taiwan (China)

    2008-06-30

    Cu{sub 2}O thin films were first deposited using magnetron sputtering at 200 deg. C. The samples produced were then annealed by a rapid thermal annealing (RTA) system at 550 deg. C in a protective atmosphere with or without the addition of oxygen. After annealing, various Cu{sub 2}O and CuO films were formed. These films were characterized, as a function of oxygen concentration in RTA, using UV-VIS photometer, four-point probe, and Hall measurement system. The results show that these Cu{sub 2}O thin films annealed at 550 deg. C with more than 1.2% oxygen added in the protective argon atmosphere would transform into the CuO phase. Apparently, the results of RTA are sensitive to the amount of oxygen added in the protective atmosphere. The resistivity of these Cu{sub 2}O thin films decreases with the increase in the oxygen amount in the annealing atmosphere, most likely due to the increase in carrier mobility. In addition, Cu{sub 2}O/ZnO (doped with AlSc) junctions were produced at 200 deg. C and annealed. The rectifying effect of P-N junction disappeared after annealing, probably due to the damage of p-n interface, which directly causes current leakage at the junction.

  12. Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

    Science.gov (United States)

    Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

    2017-08-01

    Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

  13. One-step electrodeposition for targeted off-stoichiometry Cu2ZnSnS4 thin films

    Science.gov (United States)

    Tang, Aiyue; Liu, Jingjun; Ji, Jing; Dou, Meiling; Li, Zhilin; Wang, Feng

    2016-10-01

    Cu2ZnSnS4 (CZTS) is a promising quaternary compound suitable for absorber layer of thin film solar cells. The precise control of the atomic ratio of the films are difficult for the electrodeposition of CZTS thin films. Here, we reported targeted off-stoichiometry CZTS thin films synthesized by one-step electrodeposition. We obtained Cu-poor thin films and the chemical composition of the as-deposited thin films were tailored to targeted off-stoichiometry. Based on the different kinetics of the metallic ion reduction, we successfully controlled the chemical composition by varying deposition time. After annealing, pure kesterite structure was obtained and the electronic interactions between Cu and Sn was verified in the films, which contributes to high carrier mobility. The band gap of the thin films were in the range of 1.43-1.52 eV, which is suitable for absorber layers of thin film solar cells. The carrier mobility reached a value of 28.20 cm2/V s with carrier concentration of 2.09 × 1018 cm-3 when Cu/(Zn + Sn) and Zn/Sn ratios were 0.97 and 1.13, respectively. This work paves a way for synthesizing targeted off-stoichiometry compounds by controlling kinetics and reaction time in large scale.

  14. Disability in Full-Length Feature Films: Frequency and Quality of Films over an 11 Year Span.

    Science.gov (United States)

    Byrd, E. Keith; Elliot, Timothy R.

    1988-01-01

    This study assessed the presentation of disabling conditions in feature films and the general quality of these films (as judged by professional film critics' reviews and movie-goer ratings). Psychiatric disorder was the disability most frequently depicted. Films varied in quality with critics markedly more negative in their reviews than movie…

  15. Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

  16. Microstructural revolution of CIGS thin film using CuInGa ternary target during sputtering process

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Kuang-Hsiang [Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, 106, Taiwan (China); Su, Cherng-Yuh, E-mail: cysu@ntut.edu.tw [Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, 106, Taiwan (China); Ding, Yu-Ting [Institute of Manufacturing Technology, National Taipei University of Technology, Taipei, 106, Taiwan (China); Pan, Cheng-Tang [Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer CuInGa (CIG) ternary targets were prepared by vacuum arc remelting. Black-Right-Pointing-Pointer The sputtering energy has a great influence on microstructure of CIG films. Black-Right-Pointing-Pointer Increase in sputtering energy resulted in phase transformation and indium loss. Black-Right-Pointing-Pointer The surface roughness of CIGS films is determined by the morphology of precursors. Black-Right-Pointing-Pointer Rough surface enriched in In lead to poor crystalline CIGS containing InSe phases. - Abstract: CuInGa (CIG) ternary targets were prepared by vacuum arc remelting and used to deposit CIG thin films through direct current (DC) sputtering. We adjusted the sputtering energy (1-2 kWh) by tuning both the sputtering power and the accumulative sputtering time. The impact of the varying sputtering energy on the microstructure of CIG targets and thin films was subsequently investigated. The experimental results indicated that the compositional uniformity of CIG targets is strongly influenced by this parameter. CIG thin films with a flat topography, low porosity, and dense grain boundaries were obtained when targets were accumulatively sputtered at 1 kWh. These films showed good compositional uniformity while the CIG targets were found to maintain their microstructural characteristics as compared to their as-melted counterparts. On the other hand, Cu(In,Ga)Se{sub 2} (CIGS) thin films, obtained by a selenization process, exhibited large faceted grains composed of a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. Accumulative sputtering of CIG targets at higher energies (e.g., 2 kWh) resulted in phase transformation and loss of In material as a result of an excess of residual heat budget on the surface generated by Ar ions bombardment. The CIG thin films thus showed an In-rich composition ratio, thereby potentially leading to In-rich CIGS thin films containing traces of an InSe compound.

  17. Preparation of CuGaSe{sub 2} absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Steichen, M., E-mail: marc.steichen@uni.lu; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

    2011-08-31

    CuGaSe{sub 2} absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa{sub 2} alloying during the electrodeposition and CuGaSe{sub 2} formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe{sub 2} absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

  18. Electron scattering mechanisms in Cu-Mn films for interconnect applications

    Energy Technology Data Exchange (ETDEWEB)

    Misják, F.; Nagy, K. H.; Radnóczi, G. [Research Centre for Natural Sciences, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49, Hungary, (Hungary); Lobotka, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia)

    2014-08-28

    Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO{sub 2} substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40–80 at. % Mn range which was attributed to a magnetic transformation around 200–300 K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20–40 at. % and 70–80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r = 0.6–0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

  19. Back surface studies of Cu(In,Ga)Se2 thin film solar cells

    Science.gov (United States)

    Simchi, Hamed

    Cu(In,Ga)Se2 thin film solar cells have attracted a lot of interest because they have shown the highest achieved efficiency (21%) among thin film photovoltaic materials, long-term stability, and straightforward optical bandgap engineering by changing relative amounts of present elements in the alloy. Still, there are several opportunities to further improve the performance of the Cu(In,Ga)Se2 devices. The interfaces between layers significantly affect the device performance, and knowledge of their chemical and electronic structures is essential in identifying performance limiting factors. The main goal of this research is to understand the characteristics of the Cu(In,Ga)Se2-back contact interface in order to design ohmic back contacts for Cu(In,Ga)Se2-based solar cells with a range of band gaps and device configurations. The focus is on developing either an opaque or transparent ohmic back contact via surface modification or introduction of buffer layers in the back surface. In this project, candidate back contact materials have been identified based on modeling of band alignments and surface chemical properties of the absorber layer and back contact. For the first time, MoO3 and WO 3 transparent back contacts were successfully developed for Cu(In,Ga)Se 2 solar cells. The structural, optical, and surface properties of MoO 3 and WO3 were optimized by controlling the oxygen partial pressure during reactive sputtering and post-deposition annealing. Valence band edge energies were also obtained by analysis of the XPS spectra and used to characterize the interface band offsets. As a result, it became possible to illuminate of the device from the back, resulting in a recently developed "backwall superstrate" device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices in the absorber thickness range 0.1-0.5 microm. Further enhancements were achieved by introducing moderate amounts of Ag into the Cu(In,Ga)Se2 lattice during the co-evaporation method

  20. A new Cu(TiBN x ) alloy film for boosting the per-watt illuminance of high power LEDs

    Science.gov (United States)

    Lin, Chon-Hsin

    2017-01-01

    In this study, a new Cu(TiBN x ) alloy film has been explored and utilized as a flexible heat dissipation layer for the substrate of high power LEDs to boost their per-watt illuminance by reducing the thermal resistance and increasing the thermal conductivity of the substrate. The new film is a Cu-alloy seed layer fabricated by co-sputtering Cu and TiB in an N2 atmosphere on a Ta/polyimide (Ta/PI) substrate. The film was then annealed at 340 °C for 1 h without noticeable Cu oxide formation around the film-substrate interface. The new film exhibits low resistivity, high thermal conductivity and low thermal resistance, rendering a substantially higher per-watt illuminance for LEDs that utilize the film as their additional heat dissipation layer. The experimental results gained in the study appear to confirm the new Cu(TiBN x ) film as a good candidate material, at least, for boosting the per-watt illuminance of high power LEDs.

  1. K-edge EXAFS and XANES studies of Cu in CdTe thin-film solar cells

    Science.gov (United States)

    Liu, Xiangxin; Gupta, Akhlesh; Compaan, Alvin D.; Leyarovska, Nadia; Terry, Jeff

    2002-03-01

    Copper has been identified as a very important dopant element in CdTe thin-film solar cells. Cu is a deep acceptor in CdTe and is commonly used to obtain a heavily doped, low resistance back contact to polycrystalline CdTe. Cu also helps to increase the open circuit voltage of the cell. However, Cu is also a fast diffuser in CdTe, especially along grain boundaries, and can accumulate at the CdS/CdTe junction. It is suspected of leading to cell performance degradation in some cases. The present study is designed to help identify the lattice location of the Cu in CdTe. Cu K-edge, x-ray absorption (XAS) measurements were conducted on Cu in thin films of CdTe. Experiments were performed at the MR-CAT beamline at the Advanced Photon Source. The 3 mm CdTe layers were magnetron sputtered onto fused silica substrates. Some films were diffused with Cu from a 200 Å layer of evaporated Cu. XAS spectra were collected in fluorescence geometry with a 13 elements Ge detector. Quantitative fluorescence spectroscopy measurements were also performed. Details of the Cu environment and possible changes with time will be reported.

  2. Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

    Science.gov (United States)

    Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

    2005-01-01

    Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

  3. Transport properties of YBaCuO and BiSrCaCuO thin films in the thermodynamic fluctuation range

    Energy Technology Data Exchange (ETDEWEB)

    Lang, W. (Ludwig Boltzmann Inst. fuer Festkoerperphysik, Wien (Austria)); Heine, G. (Ludwig Boltzmann Inst. fuer Festkoerperphysik, Wien (Austria)); Sekirnjak, C. (Ludwig Boltzmann Inst. fuer Festkoerperphysik, Wien (Austria)); Schwab, P. (Inst. fuer Angewandte Physik, Univ. Linz (Austria)); Wang, X.Z. (Inst. fuer Angewandte Physik, Univ. Linz (Austria)); Baeuerle, D. (Inst. fuer Angewandte Physik, Univ. Linz (Austria)); Kula, W. (Dept. of Electrical Engineering and Lab. for Laser Energetics, Univ. of Rochester, NY (United States) Inst. of Physics, Polish Academy of Sciences, Warszawa (Poland)); Sobolewski, R. (Dept. of Electrical Engineering and Lab. for Laser Energetics, Univ. of Rochester, NY (United States) Inst. of Physics, Polish Academy of Sciences, Warszawa (Poland))

    1993-04-20

    Thin films of YBaCuO have been fabricated by pulsed-laser deposition in oxygen atmosphere on MgO substrates. Films of the 2223-phase of BiSrCaCuO, stabilized by Pb-addition in the ceramic targets, were prepared by DC-magnetron sputtering. The effect of thermodynamic fluctuations of the superconducting order parameter on the normal state transport properties was investigated by measurements of the electrical resistivity, the magnetoresistance and the Hall effect. Analyzing the results in terms of Aslamazov-Larkin and Maki-Thompson theories and their extensions for 2-dimensional, layered superconductors, we obtain a consistent set of parameters from which the c-axis coherence lengths [xi][sub c](0)=1.5 A in YBaCuO and [xi][sub c](0)=1.7 A in 2223-(Bi,Pb)SrCaCuO are deduced. A significant contribution from the Maki-Thompson process was found in YBaCuO, but not such effects in the (Bi,Pb)SrCaCuO films. (orig.)

  4. Double junction photoelectrochemical solar cells based on Cu2ZnSnS4/Cu2ZnSnSe4 thin film as composite photocathode

    Science.gov (United States)

    Zhu, L.; Qiang, Y. H.; Zhao, Y. L.; Gu, X. Q.

    2014-02-01

    A solvothermal method was used to synthesize Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) nanoparticles. CZTS/CZTSe bilayer films have been fabricated via a layer-by-layer blade coating process on the fluorine dope tin oxide (FTO) substrates. We converted conventional dye-sensitized solar cells (DSSCs) into double junction photoelectrochemical solar cells with the replacement of the Pt-coated counter electrode with the as-prepared films as composite photocathodes. Compared with conventional DSSCs, the cells show an increased short circuit current and power conversion efficiency.

  5. Preparation and Layer-by-Layer Solution Deposition of Cu(In,Ga)O2 Nanoparticles with Conversion to Cu(In,Ga)S2 Films

    OpenAIRE

    Dressick, Walter J; Soto, Carissa M.; Jake Fontana; Baker, Colin C.; Myers, Jason D.; Jesse A Frantz; Woohong Kim

    2014-01-01

    We present a method of Cu(In,Ga)S2 (CIGS) thin film formation via conversion of layer-by-layer (LbL) assembled Cu-In-Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA) or polys...

  6. Nanostructured CuO thin film electrodes prepared by spray pyrolysis: a simple method for enhancing the electrochemical performance of CuO in lithium cells

    Energy Technology Data Exchange (ETDEWEB)

    Morales, J.; Sanchez, L. [Cordoba Univ. (Spain). Departamento de Qumica Inorganica e Ingenieria Quimica; Martin, F.; Ramos-Barrado, J.R.; Sanchez, M. [Malaga Univ. (Spain). Lab. de Materiales y Superficie

    2004-10-15

    Nanostructured CuO thin films were prepared by using a spray pyrolysis method, copper acetate as precursor and stainless steel as substrate. The textural and structural properties of the films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The SEM images revealed thorough coating of the substrate and thickness of 450-1250 nm; the average particle size as determined from the AFM images ranged from 30 to 160 nm. The XRD patterns revealed the formation of CuO alone and the XPS spectra confirmed the presence of Cu{sup 2+} as the main oxidation state on the surface. The films were tested as electrodes in lithium cells and their electrochemical properties evaluated from galvanostatic and step potential electrochemical spectroscopy (SPES) measurements. The discharge STEP curves exhibited various peaks consistent with the processes CuO {r_reversible} Cu{sub 2}O {r_reversible}Cu and with decomposition of the electrolyte, a reversible process in the light of the AFM images. The best electrode exhibited capacity values of 625 Ah kg{sup -1} over more than 100 cycles. This value, which involves a CuO {r_reversible} Cu reversible global reaction, is Ca. 50% higher than that reported for bulk CuO. The nanosize of the particles and the good adherence of the active material to the substrate are thought to be the key factors accounting for the enhanced electrochemical activity found. (author)

  7. Transparent thin films of Cu-TiO2 with visible light photocatalytic activity.

    Science.gov (United States)

    Janczarek, Marcin; Zielińska-Jurek, Anna; Markowska, Irmina; Hupka, Jan

    2015-03-01

    Thin films of Cu-TiO2 with a high level of transparency were prepared by a dip-coating procedure on the glass surface. CuCl2 was used as a copper precursor added during sol-gel synthesis of TiO2. The extension of optical absorption into the visible region of as-prepared thin films was indicated by UV/Vis spectroscopy. Only the anatase phase was detected by X-ray diffraction analysis (XRD). The presence of copper in the structure of thin films was confirmed by energy dispersive X-ray spectrometry (EDS). The significant rate of phenol and 4-chlorophenol mineralization was observed during visible light irradiation. The photocatalytic activity of the prepared thin films is correlated with the optimum copper content in the structure. Copper in metallic form and cupric oxides were not detected by XRD and scanning electron microscopy analysis. It is suggested that copper may exist as dispersed ions in the TiO2 lattice.

  8. Cu2ZnSnS4 thin films prepared by sulfurizing different multilayer metal precursors

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Cu2ZnSnS4 (CZTS) thin films were successfully fabricated on glass substrates by sulfurizing Cu-Sn-Zn multilayer precursors, which were deposited by ion beam sputtering and RF magnetron sputtering, respectively. The structural, electrical and optical properties of the prepared films under various processing conditions were investigated in detail. Results showed that the as-deposited CZTS thin films with the precursors by both ion beam sputtering and RF magnetron sputtering have a composition near stoichiometric. The crystallization of the samples, however, has a strong dependence on the atomic percent of constituents of the prepared CZTS films. A single phase stannite-type structure CZTS with a large absorption coefficient of 104/cm in the visible range could be obtained after sulfurization at 520℃ for 2 h. The samples relative to the RF magnetron sputtering showed a low resistivity of 0.073 ?cm and band gap energy of about 1.53 eV. The samples relative to the ion beam sputtering exhibited a resistivity of 0.36 Ωcm and the band gap energy is about 1.51 eV.

  9. Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

    Directory of Open Access Journals (Sweden)

    Hongxia Wang

    2011-01-01

    Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

  10. Measurements and analysis of Hall effect of a two dimensional electron gas in the close proximity of a superconducting YBa2Cu3O(7 - x) film

    Science.gov (United States)

    Tseng, M. Z.; Jiang, W. N.; Hu, E. L.

    1994-09-01

    A direct integration of YBa2Cu3O(7 - x) and a two dimensional electron gas Hall probe was made possible through the use of a MgO buffer layer. We demonstrate the use of this structure for the measurements of the magnetization hysteresis of a superconducting YBa2Cu3O(7 - x) thin film, and we make an estimate of the sensitivity and resolution that can be achieved with this probe structure. The close proximity of the YBa2Cu3O(7 - x) to the two dimensional electron gas (approximately 1700 A) allows sensitive measurements of interactions between the two; more importantly, closer superconductor-semiconductor spacing can be achieved without severe compromise of the component material quality.

  11. Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

    Energy Technology Data Exchange (ETDEWEB)

    Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan; McGoffin, J. Tyler; Anderson, Timothy J.

    2016-11-21

    Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/III ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.

  12. (112) and (220)/(204)-oriented CuInSe{sub 2} thin films grown by co-evaporation under vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Ruffenach, Sandra; Robin, Yoann; Moret, Matthieu, E-mail: matthieu.moret@univ-montp2.fr; Aulombard, Roger-Louis; Briot, Olivier

    2013-05-01

    CuInSe{sub 2} (CIS) layers were grown by co-evaporation in a molecular beam epitaxy system onto soda lime glass substrates by using both two-step and three step processes. The physical properties of the layers were investigated using X-ray diffraction (XRD) and optical spectroscopy. The sample atomic composition was assessed by energy dispersive analysis of X-rays. Cu-rich or In-rich CIS thin films were obtained exhibiting strong preferential (112) and (220)/(204) orientations in both cases. We performed thermal annealing at 450 °C under nitrogen, keeping Se overpressure to avoid Se desorption from the layer. The annealed layers all exhibit improved crystalline quality, with reduced stoichiometric discrepancy. The secondary phases like Cu{sub x}Se{sub 1−x} or In{sub x}Se{sub 1−x} are no more observable by XRD measurements. Regarding the preferential orientation, thermal annealing of Cu-rich CIS layers favours the (112) orientation leading to a more (112) textured layer after annealing, whatever the initial preferential growth orientation was. In opposite, thermal annealing of In-rich samples increases the (220)/(204) texture of the sample. - Highlights: ► We have studied the thermal annealing effect of Cu-rich and In-rich CuInSe{sub 2}. ► Thermal annealing improves the optical and crystalline quality. ► Secondary phase turned to CuInSe{sub 2} through a recrystallization process or evaporated. ► Thermal annealing of Cu-rich layers leads to an increase of the (112) texture. ► Thermal annealing of In-rich layers leads to an increase of the (220)/(204) texture.

  13. Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

    Science.gov (United States)

    Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

    2011-09-18

    Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

  14. Structural properties of RF-magnetron sputtered Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L.; D' Incau, M.; Leoni, M. [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Malerba, C. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy); Mittiga, A. [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Scardi, P., E-mail: Paolo.Scardi@unitn.it [Department of Materials Engineering and Industrial Technologies, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2011-10-31

    Cuprous oxide thin films were produced on soda-lime glass substrates using reactive RF-magnetron sputtering. The influence of deposition parameters and temperature on composition and structural properties of the single layers was extensively studied using X-ray diffraction. The control over microstructure and residual stresses is possible by changing reactive gas pressure and deposition temperature. Fiber textured Cu2O films showing a [100] preferred orientation and a fraction of untextured domains can be obtained: suitable modeling taking this microstructure into account shows the presence of a strong compressive stress decreasing with the temperature. Highly reproducible films can be obtained, whose microstructure is preserved when sputtering on tungsten and zinc oxide substrates.

  15. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    Directory of Open Access Journals (Sweden)

    Fiorenza Patrick

    2011-01-01

    Full Text Available Abstract The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  16. Formation dynamics of FeN thin films on Cu(100)

    KAUST Repository

    Heryadi, Dodi

    2012-01-01

    To investigate the structural and magnetic properties of thin films of FeN we have performed ab initio molecular dynamics simulations of their formation on Cu(100) substrates. The iron nitride layers exhibit a p4gm(2 × 2) reconstruction and order ferromagnetically in agreement with experiment. We establish the dynamics and time scale of the film formation as a function of the film thickness. The process is split in two phases: formation of almost flat FeN layers and optimization of the distance to the substrate. Our calculated magnetic moments are 1.67 μ B, 2.14 μ B, and 2.21 μ B for one, two, and three monolayers of iron nitride. © 2011 Elsevier B.V. All rights reserved.

  17. A correlative experimental and ab initio approach to improve the fracture behavior of Mo thin films by alloying with Cu

    Science.gov (United States)

    Jörg, Tanja; Music, Denis; Cordill, Megan J.; Franz, Robert; Köstenbauer, Harald; Linke, Christian; Winkler, Jörg; Schneider, Jochen M.; Mitterer, Christian

    2017-09-01

    The effect of Cu alloying on the deformation behavior of Mo thin films is investigated as a feasible concept to overcome their poor ductility, which severely limits performance in flexible electronics. 50 nm thick Mo1-xCux films (with 0 ≤ x ≤ 0.51) were sputter-deposited on polyimide substrates and subjected to uniaxial tensile loading while measuring their electrical resistance in situ. A significant ductility enhancement is experimentally observed with increasing Cu content. This can be rationalized by considering the associated changes in bond character as the Cu additions weaken the covalent and hence shear resistant contribution to the overall bond character.

  18. Growth and characterization of Cu2ZnSn(S,Se)4 thin films for solar cells

    OpenAIRE

    Salomé, P M P; Malaquias, J; Fernandes, P. A.; Ferreira, M. S.; Cunha, A. F. da; Leitão, J. P.; J. C. González; Matinaga, F. M.

    2012-01-01

    Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in order to study its structure and to establish the best growth precurso...

  19. The Properties of Sprayed Nanostructured P-Type CuI Films for Dye-Sensitized Solar Cells Application

    OpenAIRE

    2012-01-01

    In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The CuI solution was sprayed into fine droplets using argon as a carrier gas at different solution concentrations. The solution sprayed was 50 ml for all samples with substrate temperature constant at 50°C during the deposition process. The result shows that the CuI thin film properties strongly depend on its precursor concentration. The structural properties w...

  20. Vortex dynamics at subcritical currents at microwave frequencies in DyBa2Cu3O7-δ thin films

    NARCIS (Netherlands)

    Banerjee, Tamalika; Bagwe, V.C.; John, J.; Pai, S.P.; Kanjilal, D.

    2004-01-01

    We have investigated the dynamics of vortices at subcritical microwave currents in dc magnetic fields (up to 0.8 T) in epitaxial DyBa2Cu3O7-δ (DBCO) thin films. Microwave measurements were performed using microstrip resonators as test vehicles at 4.88 GHz and 9.55 GHz on laser ablated DBCO thin film

  1. Electrical properties, texture, and microstructure of vicinal YBa2Cu3O7−δ thin films

    NARCIS (Netherlands)

    Pedarnig, J.D.; Rössler, R.; Delamare, M.P.; Lang, W.; Bäuerle, D.; Köhler, A.; Zandbergen, H.W.

    2002-01-01

    Vicinal YBa2Cu3O7−δ (YBCO) thin films of thickness h = 20–480 nm are grown by pulsed-laser deposition on 10° miscut (001) SrTiO3 substrates. The anisotropic resistivities, c-axis texture, and critical temperature drastically depend on the thickness of vicinal films. High-resolution electron microsco

  2. Synthesis and characterization of Cu2SnSe3 thin films by electrodeposition route

    Science.gov (United States)

    Chihi, Adel; Bessais, Brahim

    2016-09-01

    A single phase Cu2SnSe3 polycrystalline semiconductor compound has been easily synthesized through electrodeposition technique onto conductive glass ITO substrates from an acidic solution at room temperature for the first time. The electrodeposition of CTSe films was studied using cyclic voltammetry, structural, morphological, optical, and electrical measurements. The effects of the annealing temperature on the growth of CTSe films were studied. XRD and Raman studies showed that the annealed CTSe thin films have a polycrystalline nature with a cubic crystal structure with a preferential orientation (111), and the crystalline size of the CTSe thin films increases as the annealing temperature increases. The AFM investigations show that the deposited film layer widely varies on annealing temperature. The optical band gap of CTSe alloys is inversely related to the grain size and decreases from 1.08 to 0.96 eV. Finally, the Hall effect measurements reveal that the all CTSe films are p-type semiconductors in particular a sample annealed at 300 °C exhibit a high Hall mobility 5.27 cm2/V s and low electrical resistivity 0.91 Ω cm compared to other samples.

  3. Chemical fabrication of p-type Cu{sub 2}O transparent thin film using molecular precursor method

    Energy Technology Data Exchange (ETDEWEB)

    Nagai, Hiroki [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Suzuki, Tatsuya [Department of Applied Chemistry and Chemical Engineering, Graduate School of Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Hara, Hiroki; Mochizuki, Chihiro; Takano, Ichiro; Honda, Tohru [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan); Sato, Mitsunobu, E-mail: lccsato@cc.kogakuin.ac.jp [Research Institute of Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

    2012-11-15

    A transparent p-type Cu{sub 2}O thin film of 50 nm thickness was successfully fabricated by means of a solution-based process involving the thermal reaction of molecular precursor films spin-coated on a Na-free glass substrate. The precursor solution was prepared by the reaction of an isolated Cu{sup 2+} complex of ethylenediamine-N, N, N Prime , N Prime -tetraacetic acid with dibutylamine in ethanol. The Cu{sub 2}O thin films resulting from heat treatment of the precursor film at 450 Degree-Sign C for 10 min in Ar gas at a flow rate of 1.0 L min{sup -1} were characterized by X-ray diffraction which indicated a precise cubic lattice cell parameter of a = 0.4265(2) nm, with a crystallite size of 8(2) nm. X-ray photoelectron spectroscopy peaks, attributable to the O 1s and Cu 2p{sub 3/2} level of the Cu{sub 2}O film were found at 532.6 eV and 932.4 eV, respectively. An average grain size of the deposited Cu{sub 2}O particles of ca. 200 nm was observed via field-emission scanning electron microscopy. The optical band edge evaluated from the absorption spectrum of the Cu{sub 2}O transparent thin film was 2.3 eV, assuming a direct-transition semiconductor. Hall Effect measurements of the thin film indicated that the single-phase Cu{sub 2}O thin film is a typical p-type semiconductor, with a hole concentration of 1.7 Multiplication-Sign 10{sup 16} cm{sup -3} and hole mobility of 4.8 cm{sup 2} V{sup -1} s{sup -1} at ambient temperature. The activation energy from the valence band to the acceptor level determined from an Arrhenius plot was 0.34 eV. The adhesion strength of the thin film on the Na-free glass substrate was also determined as a critical load (Lc1) of 2.0 N by means of a scratch test. The method described is the first example of fabrication and characterization of a p-type Cu{sub 2}O transparent thin film by a wet process. -- Graphical abstract: The p-type Cu{sub 2}O transparent thin film was facilely fabricated on a Na-free grass substrate by a solution based

  4. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  5. The impact of substrate properties on the electromigration resistance of sputter-deposited Cu thin films

    Science.gov (United States)

    Bittner, A.; Pagel, N.; Seidel, H.; Schmid, U.

    2011-06-01

    Copper (Cu) is commonly used as metallization for a wide range of microelectronic devices. Typically, organic circuit boards as well as ceramic and glass-ceramic substrates use galvanic deposited Cu films for this purpose. However, due to a thickness of several microns the lateral resolution in the μm-region being required e.g. for novel high frequency applications can not be guaranteed when applying this technology. Hence, sputter deposition is envisaged for the realization of Cu thin films on glass, LTCC (low temperature co-fired ceramics) and alumina substrates. The reliability of 300 nm thick Cu thin films is investigated under accelerated aging conditions, utilizing a test structure which consists of 20 parallel lines stressed with current densities up to 1•10+6 A•cm-2 at temperatures between T= 100°C and 200°C. To detect the degradation via the temporal characteristics of the current signal a constant voltage is applied according to the overall resistance of the test structure. Knowing the mean time to failure (MTF) and the activation energy at elevated temperatures conclusions on the migration mechanism can be drawn. Whereas on LTCC substrates the activation energy of Ea~ 0.75 eV is similar to other face centered cubic metals such as silver, the higher activation energies of about Ea~ 1 eV on glass and alumina indicate a suppression of back diffusion especially at enhanced temperature levels. Therefore, the overall electromigration resistance is lower compared to Ag. This effect is predominantly caused by a stable oxide layer being formed at high temperatures acting as passivation layer.

  6. Hall effect in semiconducting epitaxial and amorphous Y-Ba-Cu-O thin films

    Science.gov (United States)

    Shan, Pao-Chuan; Jahanzeb, Agha; Butler, Donald P.; ćelik-Butler, Zeynep; Kula, Witold; Sobolewski, Roman

    1997-05-01

    An experimental study of the Hall effect in nonmetallic Y-Ba-Cu-O thin films is reported. Both epitaxial crystalline YBa2Cuoverflow="scroll">3O6+x (x⩽0.5) and multiphase/amorphous Y-Ba-Cu-O thin films were studied. The structure of the samples was measured by x-ray diffraction and Raman microprobe. The amorphous Y-Ba-Cu-O samples were found to have a grain size of about 100 Å. The conduction properties were studied and analyzed for the two types of samples over a wide temperature range including room temperature. The Hall effect measurements showed positive charge carriers with a concentration ranging from 1017 to 1020 cm-3 at room temperature. The mobility was found to decrease with higher Hall carrier concentration. The empirical relationship for the mobility dependence on impurity concentration agreed with the relationship between mobility and the experimental Hall carrier concentration, suggesting that the same localized states were responsible for both providing the carriers and reducing the mobility through scattering. It was also observed that the mobility values for both amorphous and crystalline samples followed the same empirical curve, a result which showed that the conduction mechanisms in the epitaxial (tetragonal) and amorphous Y-Ba-Cu-O materials are very likely to be similar despite the differences in the composition and structure of the films. The similarity is consistent with other work that concludes that the conduction mechanism occurs along the copper oxide planes. Our work implies that the conduction mechanism operates over a short range, less than the 100 Å grain size of the amorphous, such that the lack of order in the amorphous samples was essentially irrelevant to the charge transport.

  7. Magnetic Properties and Nanostructures of FePtCu:C Thin Films with FePt Underlayers

    Institute of Scientific and Technical Information of China (English)

    JIN Ling-Fang; YAN Ming-Lang

    2007-01-01

    Magnetic properties and nanostructures of FePtCu:C thin films with FePt underlayers (ULs) are studied. The effect of FePt ULs on the orientation and magnetic properties of the thin films are investigated by adjusting FePt UL thicknesses from 2nm to 14nm. X-ray diffraction (XRD) scans reveal that the orientation of the films is dependent on FePt UL thickness. For a 5-nm FePtCu:C nanocomposite thin film with a 2-nm FePt UL, the coercivity is 6.5 KOe, the correlation length is 59nm, the desired face-centred-tetragonal (fct) ordered structure [L10 phase] is formed and the c axis normal to the film plane [(001) texture] is obtained. These results indicate that the better orientation and magnetic properties of the films can be tuned by decreasing the thickness of the FePt UL.

  8. Research on structure of Cu2ZnSn(S, Se)4 thin films with high Sn-related phases

    Science.gov (United States)

    Li, Peng-yu; Xue, Yu-ming; Liu, Hao; Xia, Dan; Song, Dian-you; Feng, Shao-jun; Sun, Hai-tao; Yu, Bing-bing; Qiao, Zai-xiang

    2016-11-01

    Cu2ZnSn(S, Se)4 (CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency.

  9. The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Janghsing Hsieh

    2016-11-01

    Full Text Available Cu–Ag thin films with various atomic ratios were prepared using a co-sputtering technique, followed by rapid thermal annealing at various temperatures. The films’ structural, mechanical, and electrical properties were then characterized using X-ray diffractometry (XRD, atomic force microscopy (AFM, FESEM, nano-indentation, and TEM as functions of compositions and annealing conditions. In the as-deposited condition, the structure of these films transformed from a one-phase to a dual-phase state, and the resistivity shows a twin-peak pattern, which can be explained in part by Nordheim’s Rule and the miscibility gap of Cu–Ag alloy. After being annealed, the films’ resistivity followed the mixture rule in general, mainly due to the formation of a dual-phase structure containing Ag-rich and Cu-rich phases. The surface morphology and structure also varied as compositions and annealing conditions changed. The recrystallization of these films varied depending on Ag–Cu compositions. The annealed films composed of 40 at % to 60 at % Cu had higher hardness and lower roughness than those with other compositions. Particularly, the Cu50Ag50 film had the highest hardness after being annealed. From the dissolution testing, it was found that the Cu-ion concentration was about 40 times higher than that of Ag. The galvanic effect and over-saturated state could be the cause of the accelerated Cu dissolution and the reduced dissolution of the Ag.

  10. The structural, optical, and electrical properties of vacuum evaporated Cu-doped ZnTe polycrystalline thin films

    Science.gov (United States)

    Feng, L.; Mao, D.; Tang, J.; Collins, R. T.; Trefny, J. U.

    1996-09-01

    We have studied the structural, optical, and electrical properties of thermally evaporated, Cu-doped, ZnTe thin films as a function of Cu concentration and post-deposition annealing temperature. X-ray diffraction measurements showed that the ZnTe films evaporated on room temperature substrates were characterized by an average grain size of 300Å with a (111) preferred orientation. Optical absorption measurements yielded a bandgap of 2.21 eV for undoped ZnTe. A bandgap shrinkage was observed for the Cu-doped films. The dark resistivity of the as-deposited ZnTe decreased by more than three orders of magnitude as the Cu concentration was increased from 4 to 8 at.% and decreased to less than 1 ohm-cm after annealing at 260°C. For films doped with 6 7 at.% Cu, an increase of resistivity was also observed during annealing at 150 200°C. The activation energy of the dark conductivity was measured as a function of Cu concentration and annealing temperature. Hall measurements yielded hole mobility values in the range between 0.1 and 1 cm2/V·s for both as-deposited and annealed films. Solar cells with a CdS/CdTe/ZnTe/metal structure were fabricated using Cudoped ZnTe as a back contact layer on electrodeposited CdTe. Fill factors approaching 0.75 and energy conversion efficiencies as high as 12.1% were obtained.

  11. Properties and characterization of agar/CuNP bionanocomposite films prepared with different copper salts and reducing agents.

    Science.gov (United States)

    Shankar, Shiv; Teng, Xinnan; Rhim, Jong-Whan

    2014-12-19

    Various types of agar-based bio-nanocomposite (BNC) films were prepared by blending agar and six different copper nanoparticles (CuNPs) with different shapes and sizes obtained from three different sources of copper salts and two different reducing agents. The BNC films were characterized by UV-visible, FE-SEM, FT-IR, and XRD. The thermogravimetric study showed that the melting point of BNC films was increased when ascorbic acid was used as a reducing agent for CuNPs synthesis. Apparent surface color and transmittance of agar film was greatly influenced by the reinforcement of CuNPs. However, mechanical and water vapor barrier properties did not change significantly (p>0.05) by blending with CuNPs. Tensile modulus and tensile strength decreased slightly for all types of CuNPs reinforced while elongation at break slightly increased when CuNPs produced by ascorbic acid were blended. The agar bio-nanocomposite films showed profound antibacterial activity against both Gram-positive and Gram-negative food-borne pathogenic bacteria.

  12. Growth mechanisms and origin of localized surface plasmon resonance coupled exciton effects in Cu2_xS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Savariraj, Dennyson A.; Kim, Hee-Je; Viswanathan, Kodakkal K.; Vijayakumar, M.; Prabakar, Kandasamy

    2016-02-15

    Cu2-xS thin films prepared by template free single step wet chemical method on fluorine doped tin oxide substrate without any surfactant exhibts localized surface plasmon resonance (LSPR) coupled exciton effects. Cu2-xS thin films of unique surface morphology and free carrier density due to copper vacancy is controlled by the growth temperature and time. These selectively grown Cu2-xS thin films possess tunable band gap (2.6 - 1.4 eV) due to quantum size effect. Eventhough, all the samples show satellite peak in the X-ray photoelectron spectra due to Cu vacancies, only the samples with higher oxygen concentration show LSPR in the near infrared region.

  13. An investigation on silar Cu(In{sub 1-x}Al{sub x})Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dhanam, M. [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Kavitha, B., E-mail: kavitha_48@yahoo.co.in [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Velumani, S. [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV) (Mexico)

    2010-10-25

    Cu(In{sub 1-x}Al{sub x})Se{sub 2} [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

  14. Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Chang; YAN Yun-Jie; ZHU Jing

    2007-01-01

    Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.

  15. Structural, morphological, optical and electrical properties of Cu0.87Se thin films coated by electron beam evaporation method

    Science.gov (United States)

    Bhuvaneswari, P. V.; Ramamurthi, K.; Ramesh Babu, R.; Moorthy Babu, S.

    2015-09-01

    Copper selenide powder was synthesized adopting a two-step chemical route. X-ray diffraction analysis showed that the synthesized material consists of mixed phases of Cu3Se2, Cu7Se4 and Cu0.87Se. Synthesized material was used to deposit thin films at the substrate temperature of 200, 300, 400 and 500 °C by electron beam evaporation method. The substrate temperature of 200 °C yielded amorphous film, whereas the substrate temperature of 300, 400 and 500 °C produced Cu0.87Se single-phase thin film. Atomic force microscopic studies showed that the film coated at 400 °C possesses relatively lower average roughness. The direct band gap of Cu0.87Se varies from 1.67 to 1.81 eV. Thin film coated at 400 °C shows the minimum resistivity of 5.2 × 10-4 Ω cm, whereas the film coated at 300 °C possesses the maximum mobility of 8.2 cm2/Vs.

  16. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Science.gov (United States)

    Khalil, M. I.; Atici, O.; Lucotti, A.; Binetti, S.; Le Donne, A.; Magagnin, L.

    2016-08-01

    In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.

  17. Growth of Cu Films on Si(111)-7 × 7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

    Institute of Scientific and Technical Information of China (English)

    SHEN Quan-Tong; SUN Guo-Feng; LI Wen-Juan; DONG Guo-Cai; HAN Tie-Zhu; MA Da-Yan; SUN Yu-Jie; JIA Jin-Feng; XUE Qi-Kun

    2007-01-01

    Morphologies of Cu(111) Rims on Si(111)-7×7 surfaces prepared at low temperature are investigated by scanning tunnelling microscopy (STM) and reflection high-energy electron diffraction (RHEED). At the initial growth stage, Cu 61ms are Bat due to the formation of silicide at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu(111), on the silicide layer a layer-by-layer growth is observed. The two dimensional (2D) growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rate produces films with different morphologies, which is the result of Ostwald ripening.

  18. Anisotropic photoelectric film assembled from mesoporous silica (MS)@CuO@FeS2 composite microspheres for improving photoelectric conversion.

    Science.gov (United States)

    Zong, Jie; Zhu, Yihua; Shen, Jianhua; Yang, Xiaoling; Li, Chunzhong

    2013-07-15

    We report a novel strategy for the fabrication of mesoporous silica (MS)@CuO@FeS2 composite microsphere-based anisotropic films that combine the advantages of the CuO and FeS2 materials to improve photoelectric conversion. This was achieved by aligning MS@CuO@FeS2 composite microspheres in a cross-linked gel under a homogeneous magnetic field. The MS@CuO@FeS2 composite microspheres, which were synthesized by a simple layer-by-layer (LbL) self-assembly technique together with a solvothermal method, can absorb a wide range of light and exhibit ferromagnetic properties. In addition, the resulting MS@CuO@FeS2 composite microsphere-based anisotropic film shows photoelectric anisotropy. Such systems are promising for improving the performance of solar cells.

  19. Investigations of spherical Cu NPs in sodium lauryl sulphate with Tb{sup 3+} ions dispersed in PVA films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Brijesh; Kaur, Gagandeep, E-mail: gagandeep_bhu@yahoo.com; Rai, S.B., E-mail: sbrai49@yahoo.co.in

    2016-03-15

    Highlights: • Cu NPs were prepared in SDS using 1064 nm laser radiation at fluence 37, 64 and 88 J/cm{sup 2}. • Spherical Cu NPs with average diameter varying between 10 and 50 nm atdifferent fluence. • PL of Tb3+ ions in PVA polymer film is maximum with Cu NPS at fluence 37 J/cm{sup 2}. • PVA films of Cu NPs displayed a highly temperature-dependent electrical conductivity. • These copper NPs embedded PVA films can be used as novel, low-cost sensor materials. - Abstract: Cu nanoparticles (NPs) have been prepared in SDS solution using 1064 nm laser radiation at different fluence 37 J/cm{sup 2}, 64 J/cm{sup 2} and 88 J/cm{sup 2} and structurally characterized. The TEM measurements reveal the presence of nanoparticles of spherical shape with different size. The size of the nanoparticles and their concentration increases with the increase of fluence.The effect of these Cu nanoparticles on the emissive properties of Tb{sup 3+} ion in polymer films has been studied. It is found that emission intensity of Tb{sup 3+} first increases and then deceases both with concentration of Cu NPs as well as with sizes. The PL intensity of Tb{sup 3+} ions is minimum for Cu NPs prepared with highest fluence. It has been explained in term of local field effect. This was also verified by life time measurements. These thin PVA films of copper nanoparticles displayed a highly temperature-dependent electrical conductivity with sensitivity at least comparable to commercial materials which suggest the use of these copper NPs embedded PVA films as novel, low-cost sensor materials.

  20. Experimental study of Cu2ZnSn(Se,S)4 thin films for solar cell applications