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Sample records for pzt thick films

  1. Oriented Growth of PZT thick film embedded with PZT nanoparticles

    Institute of Scientific and Technical Information of China (English)

    DUAN Zhong-xia; YUAN Jie; ZHAO Quan-liang; LU Ran; CAO Mao-sheng

    2009-01-01

    This paper reports that dense and crack-free (100) oriented lead zirconate titanate (Pb(Zr0.52Ti0.48)O3,PZT) thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly (100) oriented. The (100) orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest. The (100) orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest (100) orientation degree, which is 82. 3%.

  2. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.;

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair...... comparison of piezoelectric thin and thick films based MEMS devices, as cantilevers, beams, bridges and membranes. Simple analytical modeling is used to define the new figure of merit. The relevant figure of merits is compared for the piezoelectric material of interest for MEMS applications: ZnO, AIN, PZT...... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  3. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  4. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectri...

  5. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  6. Presentation and characterization of novel thick-film PZT microactuators

    Energy Technology Data Exchange (ETDEWEB)

    Chalvet, Vincent; Habineza, Didace, E-mail: didace.habineza@femto-st.fr; Rakotondrabe, Micky; Clévy, Cédric

    2016-04-01

    We propose in this paper the characterization of a new generation of piezoelectric cantilevers called thick-films piezoelectric actuators. Based on the bonding and thinning process of a bulk PZT layer onto a silicon layer, these cantilevers can provide better static and dynamic performances compared to traditional piezocantilevers, additionally to the small dimensions.

  7. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

    2010-01-01

    . In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

  8. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Christiansen, T.L.

    2011-01-01

    We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material....... It provides mechanical support but it also reduces the power output. Our device replaces the support with another layer of the piezoelectric material, and with the absence of an inactive mechanical support all of the stresses induced by the vibrations will be harvested by the active piezoelectric elements....

  9. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when...... the two layers are connected in series, the output voltage is increased, and as a result the relative power loss in the necessary rectifying circuit is reduced. We describe an improved process scheme for the energy harvester, which resulted in a robust fabrication process with a record high fabrication...

  10. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...

  11. Electromechanical Properties of Microcantilever Actuated by Enhanced Piezoelectric PZT Thick Film

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Mei; ZHAO Quan-Liang; CAO Mao-Sheng; YUAN Jie; DUAN Zhong-Xia; QIU Cheng-Jun

    2008-01-01

    Pb(Zro.53,Tio.47)O3 (PZT) films with thicknesses of 0.8μm, 2μm and 4μm are prepared by a sol-gel method and their longitudinal piezoelectric coefficients are analysed. The results show that the PZT thick films, whose density is closer to bulk PZT, has the better crystallization, with d33 and density much larger than those of PZT thin films. A piezoelectric microcantilever actuated by a 4-μm-thick PZT film is fabricated and its displacement is measured in different frequencies and voltages. The displacement increases linearly with the increasing bias,and the maximum displacement of 0.544 μm is observed at 30kHz for 5V bias. The resonant frequency obtained in the experiment matches quite well with the theoretical result, and it is shown that the resonant frequency of PZT microcantilever could be controlled and predicated.

  12. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.;

    2010-01-01

    In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...

  13. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...

  14. Fabrication and characterization of micromachined high-frequency tonpilz transducers derived by PZT thick films.

    Science.gov (United States)

    Zhou, Qifa; Cannata, Jonathan M; Meyer, Richard J; van Tol, David J; Tadigadapa, Srinivas; Hughes, W Jack; Shung, K Kirk; Trolier-McKinstry, Susan

    2005-03-01

    Miniaturized tonpilz transducers are potentially useful for ultrasonic imaging in the 10 to 100 MHz frequency range due to their higher efficiency and output capabilities. In this work, 4 to 10-microm thick piezoelectric thin films were used as the active element in the construction of miniaturized tonpilz structures. The tonpilz stack consisted of silver/lead zirconate titanate (PZT)/lanthanum nickelate (LaNiO3)/silicon on insulator (SOI) substrates. First, conductive LaNiO3 thin films, approximately 300 nm in thickness, were grown on SOI substrates by a metalorganic decomposition (MOD) method. The room temperature resistivity of the LaNiO3 was 6.5 x 10(-6) omega x m. Randomly oriented PZT (52/48) films up to 7-microm thick were then deposited using a sol-gel process on the LaNiO3-coated SOI substrates. The PZT films with LaNiO3 bottom electrodes showed good dielectric and ferroelectric properties. The relative dielectric permittivity (at 1 kHz) was about 1030. The remanent polarization of PZT films was larger than 26 microC/cm2. The effective transverse piezoelectric e31,f coefficient of PZT thick films was about -6.5 C/m2 when poled at -75 kV/cm for 15 minutes at room temperature. Enhanced piezoelectric properties were obtained on poling the PZT films at higher temperatures. A silver layer about 40-microm thick was prepared by silver powder dispersed in epoxy and deposited onto the PZT film to form the tail mass of the tonpilz structure. The top layers of this wafer were subsequently diced with a saw, and the structure was bonded to a second wafer. The original silicon carrier wafer was polished and etched using a Xenon difluoride (XeF2) etching system. The resulting structures showed good piezoelectric activity. This process flow should enable integration of the piezoelectric elements with drive/receive electronics.

  15. Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

    Directory of Open Access Journals (Sweden)

    Kuo-Ching Kuo

    2007-04-01

    Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

  16. Properties of PZT thick film made on LTCC substrates with dielectric intermediate layers

    Science.gov (United States)

    DÄ browski, Arkadiusz; Golonka, Leszek

    2016-11-01

    Results of experiments on application of various interlayers between LTCC (Low Temperature Cofired Ceramics) substrate and thick-film PZT (Lead Zirconate - Titanate) are described in this work. Thick-film intermediate layers were based on several dielectric materials: TiN, Al2O3, SiC, TiO2, SiC, YSZ, BN. Seven screen printable pastes were prepared on the base of powders of mentioned materials with addition of glass and organic vehicle. The substrates were made of 951 (DuPont), CeramTapeGC (CeramTec) and HL2000 (Heraeus) LTCC tapes. Sandwich type transducers, consisting of barrier layer, gold bottom electrode, PZT layer and silver top electrode were prepared and characterized. Basic piezoelectric parameters - permittivity, effective charge constant (d33(eff)) and remanent polarization were determined. The best properties were obtained for substrates made of 951. In general, interlayers based on TiO2, SiC and Al2O3 improved permittivity and charge constant comparing to bare substrates. For example, for 951 substrate the PZT layer exhibited d33(eff) equal to 160, 215, 250 and 230 pC/N for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of CeramTape GC substrates determined permittivity was equal to 215, 245, 235 and 275 for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of TiN and BN materials the parameters were considerably deteriorated.

  17. Thickness dependence of electrical properties of PZT films deposited on metal substrates by laser-assisted aerosol deposition.

    Science.gov (United States)

    Baba, S; Tsuda, H; Akedo, J

    2008-05-01

    Dependence of electrical properties-dielectric, ferroelectric, and piezoelectric properties-on film thickness was studied for lead-zirconate titanate (PZT) thick films directly deposited onto stainless-steel (SUS) substrates in actuator devices by using a carbon dioxide (CO(2) ), laser assisted aerosol deposition technique. Optical spectroscopic analysis data and laser irradiation experiments revealed that absorption at a given wavelength by the film increased with increasing film thickness. Dielectric constant epsilon, remanent polarization value P(r), and coercive field strength E(c) of PZT films directly deposited onto a SUS-based piezoelectric actuator substrate annealed by CO(2) laser irradiation at 850 degrees C improved with increasing film thickness, and for films thicker than 25 microm, epsilon 800, P(r) 40 microC/cm(2), and E(c) 45 kV/cm. In contrast, the displacement of the SUS-based actuator with the laser-annealed PZT thick film decreased with increasing film thickness.

  18. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

    2015-07-06

    A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  19. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Science.gov (United States)

    Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

    2015-07-01

    A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  20. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Directory of Open Access Journals (Sweden)

    Benpeng Zhu

    2016-03-01

    Full Text Available Single-beam acoustic tweezers (SBAT, used in laboratory-on-a-chip (LOC device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51 was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9, demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

  1. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Science.gov (United States)

    Zhu, Benpeng; Xu, Jiong; Li, Ying; Wang, Tian; Xiong, Ke; Lee, Changyang; Yang, Xiaofei; Shiiba, Michihisa; Takeuchi, Shinichi; Zhou, Qifa; Shung, K. Kirk

    2016-01-01

    Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications. PMID:27014504

  2. Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Borregaard, Louise M.

    2012-01-01

    This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been...... indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing...

  3. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Benpeng, E-mail: benpengzhu@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xu, Jiong; Yang, Xiaofei [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Ying; Lee, Changyang; Zhou, Qifa; Shung, K. Kirk [Department of Biomedical Engineering and NIH Transducer Resource Center, University of Southern California, Los Angeles, California 90089-1111 (United States); Wang, Tian; Xiong, Ke [Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072 (China); Shiiba, Michihisa; Takeuchi, Shinichi [Medical Engineering Course, Graduate School of Engineering, Toin University of Yokohama, Yokohama 225-8501 (Japan)

    2016-03-15

    Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d{sub 33} = 270 pC/N and k{sub t} = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50 MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

  4. Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Pedersen, C.M.

    2011-01-01

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer....../mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency....

  5. Low Temperature Processing of Nanocrystalline Lead Zirconate Titanate (PZT) Thick Films and Ceramics by a Modified Sol-Gel Route

    Science.gov (United States)

    Zhu, Weiguang; Wang, Zhihong; Zhao, Changlei; Tan, Ooi Kiang; Hng, Huey Hoon

    2002-11-01

    Dispersing fine particles into a sol-gel matrix is a promising process to get a thick 0-3 composite coating layer. In this paper, we have further improved this modified sol-gel process by nanocrystalline composite technique to realize the low temperature annealing. Dense Pb(Zr, Ti)O3 (PZT) thick films of 10 to 50 μm in thickness have been obtained on the platinum-coated silicon substrates by spin-coating at sintering temperature of 600-700°C and fully developed submicron-sized grains have been demonstrated in screen-printing piezoelectric films on alumina substrates at sintering temperature of 700-800°C. The dependence of various properties such as microstructure, crystallization, ferroelectric and dielectric properties of such made thick films on the processing parameters have been investigated. For a 10 μm-thick film spin-coated on silicon wafer, the dielectric loss and relative permittivity are 0.010 and 1024, respectively, at 1 kHz. The remanent polarization (Pr) and the coercive field (Ec) are 13.6 μC/cm2 and 34.5 kV/cm, respectively. Obviously, such made thick film has comparable properties with bulk PZT ceramic. This novel technique can be extensively used in sol-gel, screen-printing, tape-casting, even in traditional ceramic process to reduce the process temperature.

  6. Enhancing the dielectric property of 0.69PZT-0.31PZNN thick films by optimizing the poling condition

    Science.gov (United States)

    Song, Daniel; Woo, Min Sik; Ahn, Jung Hwan; Sung, Tae Hyun

    2015-05-01

    We investigated how the applied electric-field's magnitude and the poling time affected, respectively, the dielectric property and the microstructure of piezoelectric lead zirconate titanate/lead zirconate nickel niobate (PZT-PZNN) thick films in order to apply the films to piezoelectric energy harvesters. Several 300-µm-thick, 10 × 10-mm2 PZT-PZNN squares were tape cast, laminated, sintered, and poled under 2-, 4-, 6-, 10-, 14-, and 15-kV/mm electric fields for 30 min. The 10-kV/mm electric field produced the highest d 33 × g 33 without mechanically damaging the sample. Further, samples were sintered at 950, 1000, and 1020 °C and subsequently poled at 10 kV/mm (previously determined as the magnitude of the optimal poling electric field) for 15, 30, 60, 120, and 240 min to investigate how the poling time affected the piezoelectric ceramic's microstructure. The optimal poling time for all the sintered samples was 60 min. Further, the piezoelectric ceramics composed of small grains and poled longer than 60 min showed higher dielectric constants. However, those composed of large grains and poled for times shorter than 60 min showed higher dielectric constants because the element mobility of the piezoelectric ceramics increased with increasing poling time.

  7. Evaluation of the effect of porosity and substrate on the piezoelectric behaviour of thick-film PZT elements

    Energy Technology Data Exchange (ETDEWEB)

    Gwirc, S N [Instituto Nacional de TecnologIa Industrial, Electronica e Informatica, CC 157, B1650WAB San Martin, Buenos Aires (Argentina); Negreira, C A [Instituto de Fisica, Laboratorio de Acustica Ultrasonora, Facultad de Ciencias, Igua 4225, 11400 Montevideo (Uruguay)

    2006-10-07

    This work presents a method to establish the elastic and piezoelectric constants of a thick film screen printed PZT composite over an alumina substrate. The calculus procedure uses as input data the parameters from the bulk material because it is basically the same component of which the thick film paste is manufactured. We also need to know frequencies of resonance and anti-resonance as well as the permittivity and density of the film in a poled disc sample. This method takes into account three factors: the additional components such as the glass frit, porosity of the film caused by the low temperature sinter process and the film clamping to the substrate. Each one of these factors reduces the piezoelectric efficiency by a different amount and, consequently, the measured values of the constants. The results obtained in this way are compared with experimental measurements of the effective piezoelectric charge constant d{sub 33} and permittivity with good agreement. Small discrepancies could be explained mainly due to lack of homogeneity in glass as well as in pore distribution.

  8. Optimization of a 0.69PZT-0.31PZNN thick film by controlling slurry viscosity and tape-casting blade height

    Science.gov (United States)

    Song, Daniel; Woo, Min Sik; Ahn, Jung Hwan; Sung, Tae Hyun; Kim, Kyoung Bum

    2014-12-01

    We investigated how the viscosities of piezoelectric lead zirconate titanate/lead zirconate nickel niobate (PZT-PZNN) slurry samples affect the laminated-film densities based on various conditions of degassing time for 0, 30, and 60 min. PZT-PZNN slurries with different viscosities were tape casted into green sheets by adjusting the comma blade height to 100, 200, 300, 400, and 500 μm. As a result the slurry viscosity linearly increased with increasing slurry degassing time, and the thickness of the green sheet increased with increasing comma blade height. The density and the dielectric properties of piezoelectric ceramic films with the same thicknesses, but composed of different numbers of layers, were compared. The laminated-film density and the dielectric property d33 × g33 increased with decreasing number of laminated layers. However, when the viscosity of the slurry was too high (degassing time > 60 min) and the comma blade height was too high (comma blade height > 300 μm), the tape-casted green sheet was too thick to have enough time to dry. By controlling the slurry viscosity by adjusting the degassing time and the comma blade height, we were able to optimize the thickness of the green sheet in a tape-casting. The optimal green sheet thickness was < 70 μm, and the number of sheets laminated should be minimized to increase the film's density and dielectric constant.

  9. Optimization of a 0.69PZT-0.31PZNN thick film by controlling slurry viscosity and tape-casting blade height

    Energy Technology Data Exchange (ETDEWEB)

    Song, Daniel; Woo, Minsik; Ahn, Junghwan; Sung, Taehyun [Hanyang University, Seoul (Korea, Republic of); Kim, Kyoungbum [Korea University, Seoul (Korea, Republic of)

    2014-12-15

    We investigated how the viscosities of piezoelectric lead zirconate titanate/lead zirconate nickel niobate (PZT-PZNN) slurry samples affect the laminated-film densities based on various conditions of degassing time for 0, 30, and 60 min. PZT-PZNN slurries with different viscosities were tape casted into green sheets by adjusting the comma blade height to 100, 200, 300, 400, and 500 μm. As a result the slurry viscosity linearly increased with increasing slurry degassing time, and the thickness of the green sheet increased with increasing comma blade height. The density and the dielectric properties of piezoelectric ceramic films with the same thicknesses, but composed of different numbers of layers, were compared. The laminated-film density and the dielectric property d{sub 33} x g{sub 33} increased with decreasing number of laminated layers. However, when the viscosity of the slurry was too high (degassing time > 60 min) and the comma blade height was too high (comma blade height > 300 μm), the tape-casted green sheet was too thick to have enough time to dry. By controlling the slurry viscosity by adjusting the degassing time and the comma blade height, we were able to optimize the thickness of the green sheet in a tape-casting. The optimal green sheet thickness was < 70 μm, and the number of sheets laminated should be minimized to increase the film's density and dielectric constant.

  10. Comparison of the thermal degradation of heavily Nb-doped and normal PZT thin films.

    Science.gov (United States)

    Yang, Jeong-Suong; Kang, Yunsung; Kang, Inyoung; Lim, Seungmo; Shin, Seung-Joo; Lee, Jungwon; Hur, Kangheon

    2017-01-04

    The degradation of Niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, 2-step PZT and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary (MPB) were in-situ deposited under optimum condition by RF-magnetron sputtering. All 2 μm thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiOx bottom electrode on Si wafer, and Nb doped PZT thin film was on Ir/TiW electrode with help of orientation control. Sputtered PZT films formed on MEMS gyroscope, and the degradation rates were compared at different temperatures. Nb-doped PZT showed the best resistance to the thermal degradation, followed by 2-step PZT. To clarify the effect of oxygen vacancies for the degradation of the film at high temperature, photo-luminescence (PL) measurement was conducted. It confirmed that oxygen vacancy rate was the lowest in heavily Nb-doped PZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed Nb-doped PZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of micro-electromechanical system (MEMS) packaging.

  11. Scaling laws In PZT/Si(001) Thin Films

    Science.gov (United States)

    Ramírez, Juan; Cortes, Alexander; Lopera, Wilson; Gómez, Maria Elena; Prieto, Pedro

    2006-03-01

    Self-affine scaling behavior of ferroelectric Pb(Zr1-xTix)O3 (PZT) thin films grown on Si(001) substrates has been investigated by AFM Atomic Force Microscope. PZT thin films were grown via Rf-sputtering technique at high oxygen pressures and at substrate temperatures 600 ^oC varying the deposition time and keeping all parameters. growth constant. The α-global rough-exponent was founded close to 0.7 indicating a correlated growth. Anomalous scaling behavior was founded in all PZT/Si surfaces. A value of 0.5.for the α-local value was founded. The local value of the roughness exponent is associated to the diffusional process on the first stage growth. Saturation roughness showed oscillation dependence with the PZT-thickness. This dependence can be explained by the mismatch between Si substrate and PZT thin film. These results are corroborated calculating the grain size for all samples. This work was supported by COLCIENCIAS under the Excellence Center for Novel Materials Contract no 0043-2005.

  12. Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

    Directory of Open Access Journals (Sweden)

    Cui Yan

    2014-01-01

    Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

  13. Far infrared and Raman response in tetragonal PZT ceramic films

    Energy Technology Data Exchange (ETDEWEB)

    Buixaderas, E.; Kadlec, C.; Vanek, P.; Drnovsek, S.; Ursic, H.; Malic, B.

    2015-07-01

    PbZr{sub 0}.38Ti{sub 0}.62O{sub 3} and PbZr{sub 0}.36Ti{sub 0}.64{sub O}3 thick films deposited by screen printing on (0 0 0 1) single crystal sapphire substrates and prepared at two different sintering temperatures, were studied by Fourier-transform infrared reflectivity, time-domain TH{sub z} transmission spectroscopy and micro-Raman spectroscopy. The dielectric response is discussed using the Lichtenecker model to account for the porosity of the films and to obtain the dense bulk dielectric functions. Results are compared with bulk tetragonal PZT 42/58 ceramics. The dynamic response in the films is dominated by an overdamped lead-based vibration in the TH{sub z} range, as known in PZT, but its evaluated dielectric contribution is affected by the porosity and roughness of the surface. (Author)

  14. Plasmonic assisted two wave mixing phenomenon for energy transfer in ferroelectric PZT film

    Science.gov (United States)

    Gupta, Reema; Kumari, Satchi; Tomar, Monika; Gupta, Vinay

    2017-04-01

    Ferroelectric - photorefractive PZT thin films have been exploited to study the energy transfer using pump probe technique for the development of optical delay lines. Two-wave mixing has been studied for three different PZT thin film samples deposited using pulsed laser deposition (PLD) technique. Uniform distribution of gold micro-discs of 40 nm thickness and 120 μm diameter over the surface of PZT thin film plays a vital role in enhancing the two-wave mixing. This is due to the ferroelectric domains present in PZT thin film which get polarized as a result of excited surface plasmons at the Au-PZT interface. The dual effect leads to an enhanced energy transfer from pump to 'Probe Beam'. The maximum two-wave mixing gain was found to be about 1.185 and 1.055 respectively for gold micro-discs patterned and bare PZT thin film deposited on STO substrate. In comparison, the PZT thin film covered completely with the gold overlayer does not show any significant two wave mixing gain due to the scattering of light by Au overlayer.

  15. Airflow energy harvesters of metal-based PZT thin films by self-excited vibration

    Science.gov (United States)

    Suwa, E.; Tsujiura, Y.; Kurokawa, F.; Hida, H.; Kanno, I.

    2014-11-01

    We developed self-excited vibration energy harvesters of Pb(Zr,Ti)O3 (PZT) thin films using airflow. To enhance the self-excited vibration, we used 30-μm-thick stainless steel (SS304) foils as base cantilevers on which PZT thin films were deposited by rf-magnetron sputtering. To compensate for the initial bending of PZT/SS304 unimorph cantilever due to the thermal stress, we deposited counter PZT thin films on the back of the SS304 cantilever. We evaluated power-generation performance and vibration mode of the energy harvester in the airflow. When the angle of attack (AOA) was 20° to 30°, large vibration was generated at wind speeds over 8 m/s. By FFT analysis, we confirmed that stable self-excited vibration was generated. At the AOA of 30°, the output power reached 19 μW at wind speeds of 12 m/s.

  16. Optical properties of PZT thin films deposited on a ZnO buffer layer

    OpenAIRE

    Schneider, T.; Leduc, D; Cardin, J.; LUPI, C; Barreau, N; Gundel, H.

    2015-01-01

    The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a numerical algorithm for the case of a two-layer system and show its robustness in the presence of noise. The sensitivity of the algorithm of the two-layer model allows us to relate the observed changes in the PZT refractive index to the PZT structural change du...

  17. Processing effects for integrated PZT: Residual stress, thickness, and dielectric properties

    Science.gov (United States)

    Ong, Ryan Jason

    This dissertation focuses on the integration of lead zirconate titanate (PZT) films on Pt/Ti/SiO2//Si, and the effect of on properties. Direct deposition of PZT on Si will lead to on-chip power capacitors, non-volatile memory cells, and vibration sensors. However, previous research indicates that the dielectric, ferroelectric and piezoelectric response characteristics for the devices are often inferior to bulk specimens. Property variations have been attributed to changes in several major variables including, chemical composition, phase content, grain size, crystallographic orientation, film thickness, and stress, each of which, in turn, can depend on processing. The first goal of this work was to design a sol-gel processing methodology to control all major variables except film thickness and stress, thus isolating their respective effects on properties. All specimens were verified to be of the Pb(Zr0.53Ti0.47)O3 composition, in the perovskite structure, with a constant grain size of 110nm, and with (111) fiber texture. PZT film thickness was varied from 95nm to 500nm and residual stress was measured to be either 150 or 180MPa, biaxial tensile, depending on thickness. These specimens allowed for new insights into the fundamental differences between bulk materials and thin films. A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ˜600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33

  18. EFFECT OF SOL CONCENTRATION AND SUBSTRATE TYPE ON MICROSTRUCTURE FORMATION OF PZT THIN FILMS

    Directory of Open Access Journals (Sweden)

    ĽUBOMÍR MEDVECKÝ

    2011-03-01

    Full Text Available Pb(Zr0.52Ti0.48O3 (PZT sols were prepared by a modified sol-gel route using both solvents - acetic acid and stabilizer solution (n-propanol : 1,2-propanediol in the rate 10 : 1. The sols were deposited by spin-coating onto platinized Al2O3 or SiO2/Si substrates. Results of SEM and XRD analyses confirmed, that the transformation of the amorphous PZT film to perovskite structure happened after sintering at 650°C. The mechanism of microstructure formation has described for morphologicaly different perovskite particle types in 1, 2 and 3-layered PZT thin films with thickness of 200-500 nm on used substrates. Three different PZT film microstructure types in dependence on the applied sol concentration were found. It was found, that the PZT/Pt/Al2O3 film microstructure at 1.0 M sol concentration was composed of two forms of perovskite particles, big rosette and irregular cuboidal particles. Small spherical particles and rosette structure were found in PZT/Pt/Si/SiO2 films.

  19. PMN-PT-PZT composite films for high frequency ultrasonic transducer applications.

    Science.gov (United States)

    Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk

    2012-06-01

    We have successfully fabricated x(0.65PMN-0.35PT)-(1 - x)PZT (xPMN-PT-(1 - x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol-gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT-(1 - x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT-0.1PZT thick film transducer is built. It has 200 MHz center frequency with a -6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.

  20. Study on Inter-Diffusion Barrier Layer between PZT Pyroelectric Thick Film and Si Substrate%PZT厚膜与Si衬底互扩散阻挡层研究

    Institute of Scientific and Technical Information of China (English)

    陈冲; 吴传贵; 彭强祥; 罗文博; 张万里; 王书安

    2013-01-01

    在Pt/Ti/SiO2/Si基片上,利用电泳沉积制备PZT热释电厚膜材料.为防止Pb和Si互扩散,在Pt底电极与SiO2/Si衬底间通过直流磁控溅射制备了TiOx薄膜阻挡层.对具有0、300 nm和500 nm TiOx阻挡层的PZT厚膜材料用SEM和能量色散谱仪(EDS)表征了Pb和Si互扩散情况,用动态热释电系数测量仪测试了热释电系数.结果表明,当TiOx阻挡层为500 nm时,可阻挡Pb和Si互扩散,热释电性能最好.热释电系数p=1.5×10-8 C·cm-2·K-1,相对介电常数εr=170,损耗角正切tanδ=0.02,探测度优值因子Fd=1.05×10-5pa-0.5.%PZT thick film as pyroelectric material has been prepared on the Pt/Ti/SiCK/Si substrate by using the electrophoresis deposition (EPD) method. In order to prevent the inter-diffusion between Pb and Si,a TiOx film barrier layer between Pt bottom electrode and SiO2/Si substrate has been prepared by using the DC magnetron sputtering method. The inter-diffusion between Pb and Si in PZT thick film material with TiO, barrier layer thickness of 0, 300 nm and 500 nm respectively have been characterized by SEM and EDS. The pyroelectric coefficient has been measured by the dynamic pyroelectric coefficient instrument. The results show that the inter-diffusion between Pb and Si can be blocked when the thickness of TiOx barrier layer is 500 nm and have the best pyroelectric properties. The pyroelectric coefficient, relative dielectric constant,dielectric loss and detectivity figure of merit are p=1. 5 × 10-8C · cm-2k-1 ,εr = 170,tan 8=0. 02 and Fd = 1. 05 × 10-5 Pa-0.5 respectively.

  1. Characterization of PZT thin films on metal substrates; Charakterisierung von PZT-Duennschichten auf Metallsubstraten

    Energy Technology Data Exchange (ETDEWEB)

    Dutschke, A.

    2008-02-02

    Lead zirconate titanate (PbZr{sub x}Ti{sub 1-x}O{sub 3},PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric

  2. Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients.

    Energy Technology Data Exchange (ETDEWEB)

    Christman, J. A.; Kim, S.-H.; Kingon, A. I.; Maiwa, H.; Maria, J.-P.; Streiffer, S. K.

    1999-04-26

    The ferroelectric and piezoelectric properties of 2000 {angstrom} thick chemical solution deposited Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) thin films were investigated. Several Zr/Ti ratios were studied: 30/70, 50/50 and 65/35, which correspond to tetragonal, near-morphotropic, and rhombohedral symmetries. In all samples, a {l_brace}111{r_brace}-texture is predominant. Longitudinal piezoelectric coefficients and their dc field dependence were measured using the contact AFM method. The expected trend of a maximum piezoelectric coefficient at or near to the MPB was not observed. The composition dependence was small, with the maximum d{sub 33} occurring in the tetragonal material. To explain the results, crystallographic texture and film thickness effects are suggested. Using a modified phenomenological approach, derived electrostrictive coefficients, and experimental data, d{sub 33} values were calculated. Qualitative agreement was observed between the measured and calculated coefficients. Justifications of modifications to the calculations are discussed.

  3. Optical properties of PZT thin films deposited on a ZnO buffer layer

    OpenAIRE

    Schneider, T.; Leduc, D; Cardin, J.; LUPI, C; Barreau, N; Gundel, H.

    2007-01-01

    International audience; The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a numerical algorithm for the case of a two-layer system and show its robustness in the presence of noise. The sensitivity of the algorithm of the two-layer model allows us to relate the observed changes in the PZT refractive index to the ...

  4. Flexible PZT Thin Film Tactile Sensor for Biomedical Monitoring

    Directory of Open Access Journals (Sweden)

    Wen-Jong Wu

    2013-04-01

    Full Text Available This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.

  5. Preparation and Characterization of PZT films Fabricated on Si Substrate

    Institute of Scientific and Technical Information of China (English)

    YANG Ying

    2006-01-01

    Lead zirconium titanate (PZT) films (Zr/Ti=45:55)with a high dielectric constant are prepared successfully on the low-resistance Si substrate in sol-gel dip-coating process with PT film used as the buffer layer.The dielectric and ferroelectric properties of the films as well as the relationship between crystallization and preparing condition are studied.It is shown that the PZT ferroelectric thin films with a (110) preferred orientation and a well-crystallized perovskite structure could be obtained after annealing at 800℃ for 15 min.The particle size of the sample is about 14-25 nm.The P-E hysteresis loops are measured by means of the Sawyer-Tower test system with a compensation resistor at room temperature.The remanent polarization (Pr) and coercive electric field (Ec) of the measured PZT thin films are 47.7 μC/cm2 and 18 kV/cm,respectively.The relative dielectric constant εr and the dissipation factor tgδ of the PZT thin films were measured with an LCR meter and were found to be 158 and 0.04-0.005,respectively.

  6. In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, A., E-mail: davydok@mpie.de [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Max-Planck-Institut für Eisenforschung, Department Structure and Nano-/Micromechanics of Materials, D-40237 Düsseldorf (Germany); Cornelius, T.W. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Mocuta, C. [SOLEIL Synchrotron, DiffAbs beamline, L' Orme des Merisiers, Saint-Aubin - BP 48, 91192 Gif-sur-Yvette Cedex (France); Lima, E.C. [Universidade Federal do Tocantins, 77500-000 Porto Nacional, TO (Brazil); Araujo, E.B. [Departamento de Fisica e Quimica, Universidade Estadual Paulista, Av. Brasil, 56 Centro, 15385-000 Ilha Solteira, SP (Brazil); Thomas, O. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France)

    2016-03-31

    Piezoelectric properties of randomly oriented self-polarized PbZr{sub 0.50}Ti{sub 0.50}O{sub 3} (PZT) thin films were investigated using in situ synchrotron X-ray diffraction. Possibilities for investigating the piezoelectric effect using micro-sized hard X-ray beams are demonstrated and perspectives for future dynamical measurements on PZT samples with variety of compositions and thicknesses are given. Studies performed on the crystalline [100, 110] directions evidenced piezoelectric anisotropy. The piezoelectric coefficient d{sub 33} was calculated in terms of the lab reference frame (d{sub perp}) and found to be two times larger along the [100] direction than along the [110] direction. The absolute values for the d{sub perp} amount to 120 and 230 pm/V being in good agreement with experimental and theoretical values found in literature for bulk PZT ceramics. - Highlights: • We performed in situ synchrotron X-ray diffraction studies on (PZT) thin films. • We discuss anisotropy of piezo effect in different crystallographic directions. • Perpendicular component Piezo coefficient of thin PZT layer is defined.

  7. Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

    Science.gov (United States)

    Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

    2013-05-10

    Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

  8. PZT thin films for piezoelectric MEMS mechanical energy harvesting

    Science.gov (United States)

    Yeager, Charles

    This thesis describes the optimization of piezoelectric Pb(ZrxTi 1-x)O3 (PZT) thin films for energy generation by mechanical energy harvesting, and self-powered micro-electro-mechanical systems (MEMS). For this purpose, optimization of the material was studied, as was the incorporation of piezoelectric films into low frequency mechanical harvesters. A systematic analysis of the energy harvesting figure of merit was made. As a figure of merit (e31,ƒ)2/epsilon r (transverse piezoelectric coefficient squared over relative permittivity) was utilized. PZT films of several tetragonal compositions were grown on CaF2, MgO, SrTiO3, and Si substrates, thereby separating the dependence of composition on domain orientation. To minimize artifacts associated with composition gradients, and to extend the temperature growth window, PZT films were grown by metal organic chemical vapor deposition (MOCVD). Using this method, epitaxial {001} films achieved c-domain textures above 90% on single crystal MgO and CaF2 substrates. This could be tailored via the thermal stresses established by the differences in thermal expansion coefficients of the film and the substrate. The single-domain e31,ƒ for PZT thin films was determined to exceed -12 C/m2 in the tetragonal phase field for x ≥ 0.19, nearly twice the phenomenologically modeled value. The utilization of c-domain PZT films is motivated by a figure of merit above 0.8 C2/m4 for (001) PZT thin films. Increases to the FoM via doping and hot poling were also quantified; a 1% Mn doping reduced epsilonr by 20% without decreasing the piezoelectric coefficient. Hot poling a device for one hour above 120°C also resulted in a 20% reduction in epsilonr ; furthermore, 1% Mn doping reduced epsilonr by another 12% upon hot poling. Two methods for fabricating thin film mechanical energy harvesting devices were investigated. It was found that phosphoric acid solutions could be used to pattern MgO crystals, but this was typically accompanied by

  9. Piezoelectric characteristics of PZT thin films on polymer substrate

    Science.gov (United States)

    Kang, Min-Gyu; Do, Younh-Ho; Oh, Seung-Min; Rahayu, Rheza; Kim, Yiyein; Kang, Chong-Yun; Nahm, Sahn; Yoon, Seok-Jin

    2012-02-01

    The goal of piezoelectric energy harvesting is to improve the power efficiency of devices. One of the approaches for the improvement of power efficiency is to apply the large strain on the piezoelectric materials and then many scientists approached using thin films or nano-structured piezoelectric materials to obtain flexibility. However, the conventional thin film processes available for the fabrication of piezoelectric materials as PbZr0.52Ti0.48O3 (PZT) are not compatible with flexible electronics because they require high processing temperatures (>700^oC) to obtain piezoelectricity. Excimer laser annealing (ELA) is attractive heat process for the low-temperature crystallization, because of its material selectivity and short heating time. In this study, the amorphous PZT thin films were deposited on polymer substrate by rf-sputtering. To crystallize the amorphous films, the ELA was carried out with various conditions as function of the applied laser energy density, the number of pulse, and the repetition rate. To evaluate the piezoelectric characteristics, piezoelectric force microscopy (PFM) and electrometer are used. As a result, we obtained the crystallized PZT thin film on flexible substrate and obtained flexible piezoelectric energy harvester.

  10. Local piezoelectric behavior in PZT-based thin films for ultrasound transducers

    Science.gov (United States)

    Griggio, Flavio

    Piezoelectric microelectromechanical systems (MEMS) are currently used in inkjet printers and precision resonators; numerous additional applications are being investigated for sensors, low-voltage actuators, and transducers. This work was aimed at improving piezoelectric MEMS by taking two approaches: 1) identifying factors affecting the piezoelectric response of ferroelectric thin films and 2) demonstrating integration of these films into a high frequency array transducer. It was found that there are several key factors influencing the piezoelectric response of thin films for a given material composition. First, large grain size improves the piezoelectric response. This was demonstrated using chemical solution deposited lead nickel niobate -- lead zirconate titanate (0.3)Pb(Ni 0.33Nb0.67)O3 - (0.7)Pb(Zr0.45Ti 0.55O3), (PNN-PZT) ferroelectric thin films. It was shown that this composition allows greater microstructural control than does PZT. Dielectric permittivities ranging from 1350 to 1520 and a transverse piezoelectric coefficient e31,f as high as -- 9.7 C/m 2 were observed for films of about 0.25 mum in thickness. The permittivity and piezoelectric response as well as extrinsic contributions to the dielectric constant increased by 14 and 12 % respectively for samples with grain sizes ranging from 110 to 270 nm. A second factor influencing the piezoelectric response is film composition with respect to the morphotropic phase boundary (MPB). The composition dependence of the dielectric and piezoelectric nonlinearities was characterized in epitaxially grown (0.3)Pb(Ni0.33Nb0.67)O3-(0.7)Pb(Zr xTi1-xO3) thin films deposited on SrTiO 3 to minimize the influence of large-angle grain boundaries. Tetragonal, MPB and rhombohedral films were prepared by changing the Zr/Ti ratio. The largest dielectric and piezoelectric nonlinearities were observed for the rhombohedral sample; this resulted from a higher domain wall mobility due to a smaller ferroelectric distortion and

  11. Design, Modeling and Optimization of a Piezoelectric Pressure Sensor based on a Thin-Film PZT Membrane Containing Nanocrystalline Powders

    Directory of Open Access Journals (Sweden)

    Vahid MOHAMMADI

    2009-11-01

    Full Text Available In this paper fabrication of a 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 thin film has been presented and then a pressure sensor based on multilayer thin-film PZT diaphragm contain of Lead Zirconate Titanate nanocrystalline powders was designed, modeled and optimized. Dynamics characteristics of this multilayer diaphragm have been investigated by ANSYS® FE software. By this simulation the effective parameters of the multilayer PZT diaphragm for improving the performance of a pressure sensor in different ranges of pressure are optimized. The optimized thickness ratio of PZT layer to SiO2 was given in the paper to obtain the maximum deflection of the multilayer thin-film PZT diaphragm. A 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 film has been developed to fabricate the pressure sensor by a hybrid sol gel process. PZT nanopowders fabricated via conventional sol gel method and uniformly dispersed in PZT precursor solution by an attrition mill. XRD analysis shows that perovskite structure would be formed due to the presence of a significant amount of ceramic nanopowders. This texture has a good effect on piezoelectric properties of perovskite structure. The film forms a strongly bonded network and less shrinkage occurs, so the films do not crack during process. Also the aspect ratio through this process would be increased. SEM micrographs indicated that PZT films were uniform, crack free and have a composite microstructure and a piezoelectric coefficient d31 of -40 pC.N-1 and d33 ranged from 50pm.N-1 to 60pm.N-1.

  12. Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q. [Advanced Materials Group, School of Industrial and Manufactory Science, Cranfield University, Beds (United Kingdom)]. E-mail: q.zhang@cranfield.ac.uk; Whatmore, R.W. [Advanced Materials Group, School of Industrial and Manufactory Science, Cranfield University, Beds (United Kingdom)

    2001-08-07

    Thin films of ferroelectric lead zirconate titanate (PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} PZT30/70) and manganese-doped lead zirconate titanate ((Pb(Zr{sub 0.3}Ti{sub 0.7}){sub 1-x}Mn{sub x})O{sub 3}, where x=0.01, PM01ZT30/70; and x=0.03, PM03ZT30/70) have been prepared using sol-gel processing techniques. These materials can be used as the pyroelectric thin films in uncooled infrared detectors. The thin films were prepared via a sol-gel route based on a hybrid solvent of methanol and ethanol with acetic acid, ethanolamine and ethylene glycol as additives. The final solution is non-moisture sensitive and stable. Films deposited on Pt/Ti/SiO{sub 2}/Si substrates and annealed on a hot plate at 500-530{sup 0}C for a few minutes were seen to fully crystallize into the required perovskite phase and showed excellent ferroelectric behaviour, demonstrated by reproducible hysteresis loops (P{sub r}=33-37 {mu}C cm{sup -2}, Ec(+)=70-100 kV cm{sup -1}, Ec(-)=-170 to -140 kV cm{sup -1}). The pyroelectric coefficient (p) was measured using the Byer-Roundy method. At 20 deg. C, p was 2.11x10{sup -4} C m{sup -2} K{sup -1} for PZT30/70, 3.00x10{sup -4} C m{sup -2} K{sup -1} for PM01ZT30/70 and 2.40x10{sup -4} C m{sup -2} K{sup -1} for PM03ZT30/70 thin films. The detectivity figure-of-merit (F{sub D}) was 1.07x10{sup -5} Pa{sup -0.5} for PZT30/70, 3.07x10{sup -5} Pa{sup -0.5} for PM01ZT30/70 and 1.07x10{sup -5} Pa{sup -0.5} for PM03ZT30/70. These figures compare well with values reported previously. (author)

  13. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

    Science.gov (United States)

    Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

    2014-04-23

    A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. A new traveling wave ultrasonic motor using thick ring stator with nested PZT excitation.

    Science.gov (United States)

    Chen, Weishan; Shi, Shengjun; Liu, Yingxiang; Li, Pei

    2010-05-01

    To avoid the disadvantages of conventional traveling wave ultrasonic motors--lower efficiency PZT working mode of d(31), fragility of the PZT element under strong excitation, fatigue of the adhesive layer under harsh environmental conditions, and low volume of the PZT material in the stator--a new type of traveling wave ultrasonic motor is presented in this paper. Here we implement the stator by nesting 64 PZT stacks in 64 slots specifically cut in a thick metal ring and 64 block springs nested within another 64 slots to produce preloading on the PZT stacks. In this new design, the d33 mode of the PZT is used to excite the flexural vibrations of the stator, and fragility of the PZT ceramics and fatigue of the adhesive layer are no longer an issue. The working principle, FEM simulation, fabrication, and performance measurements of a prototype motor were demonstrated to validate the proposed ideas. Typical output of the prototype motor is no-load speed of 15 rpm and maximum torque of 7.96 N x m. Further improvement will potentially enhance its features by increasing the accuracy in fabrication and adopting appropriate frictional material into the interface between the stator and the rotor.

  15. Effect of sol temperature on structural, morphological and magnetic properties of PZT thin films on alumina substrate

    Science.gov (United States)

    Sreelalitha, K.; Thyagarajan, K.

    2016-01-01

    In the present study, we investigate the structural, morphological and magnetic properties of sol-gel spin-coated PZT thin films on alumina substrate. The morphotropic phase boundary (MPB) of PZT [Pb (Zr1-xTix)03] between the tetragonal and rhombohedral phases occurs at the Zr/Ti ratio of 52/48. At the MPB the physical properties of PZT are of far-reaching importance due to their possible crystalline phases. In this study Pb(Zr0.52Ti0.48)03 sols are prepared at room temperature and at 125 °C. The gels are coated onto alumina substrate using a spin-coating unit as two and three layers. The structural studies using XRD confirm the perovskite phase formation at an annealing temperature of 660 °C for both films. The structural parameter grain size, dislocation density, lattice parameters and strain were dependent on the sol temperature. The SEM morphology of the samples represents well-developed dense grain structure and thickness in micrometer ranges. The VSM analysis shows diamagnetic and ferromagnetic hysteresis loop. The ferromagnetism at low fields in PZT films is confirmed by studying the magnetic properties of powder made of the same gel. The effect of heat treatment on the gel preparation is observed on structural, morphological and magnetic properties of PZT thin films. The ferromagnetism in PZT can be attributed to oxygen vacancies. The squareness ratio of the films shows the application of the films as a high-density recording medium.

  16. Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes.

    Science.gov (United States)

    Chidambaram, Nachiappan; Mazzalai, Andrea; Muralt, Paul

    2012-08-01

    Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the Si directions. Randomly oriented 1-μm-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C·m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be

  17. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  18. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: a review

    Science.gov (United States)

    Shilpa, G. D.; Sreelakshmi, K.; Ananthaprasad, M. G.

    2016-09-01

    This paper describes an overview of the state of art in PbZrxTi1-xO3 (PZT)ferroelectric thin films and its applications in Micro Electro Mechanical Systems (MEMS). First, the deposition techniques and then the important properties of PZT films such as surface morphology polarization and ferroelectric properties are reviewed. Two major deposition techniques such as sol-gel and Magnetron sputtering are given and compared for the film surface morphology and ferroelectric properties. Finally, the application of PZT thin film in MEMS ultrasonic sensors is discussed.

  19. Thin Film PZT Piezo MEMS for Micro-Robotic Angular Rate Sensing and Rotary Actuation

    Science.gov (United States)

    2012-07-31

    Luz Sanchez, Rob Proie, Vishnu Ganesan, Joe Conroy, and Ron Polcawich July 31, 2012 U.S. Army Research Laboratory THIN FILM PZT PIEZO MEMS FOR...Caltech Angular rate sensing on 1-30 mg platform • 2 orders smaller than packaged state of the art gyroscope. • Integrated biomimetic PZT actuator

  20. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain;

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  1. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  2. Reliability of vibration energy harvesters of metal-based PZT thin films

    Science.gov (United States)

    Tsujiura, Y.; Suwa, E.; Kurokawa, F.; Hida, H.; Kanno, I.

    2014-11-01

    This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s2. However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s2. The transverse piezoelectric coefficient (e31,f) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s2 and 36% at 25 m/s2 if we continue to excite the PVEHs for 30 years.

  3. Enhanced piezoelectric performance of composite sol-gel thick films evaluated using piezoresponse force microscopy.

    Science.gov (United States)

    Liu, Yuanming; Lam, Kwok Ho; Kirk Shung, K; Li, Jiangyu; Zhou, Qifa

    2013-05-14

    Conventional composite sol-gel method has been modified to enhance the piezoelectric performance of ceramic thick films. Lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT) thick films were fabricated using the modified sol-gel method for ultrasonic transducer applications. In this work, piezoresponse force microscopy was employed to evaluate the piezoelectric characteristics of PZT and PMN-PT composite sol-gel thick films. The images of the piezoelectric response and the strain-electric field hysteresis loop behavior were measured. The effective piezoelectric coefficient (d33,eff) of the films was determined from the measured loop data. It was found that the effective local piezoelectric coefficient of both PZT and PMN-PT composite films is comparable to that of their bulk ceramics. The promising results suggest that the modified composite sol-gel method is a promising way to prepare the high-quality, crack-free ceramic thick films.

  4. Damping properties of epoxy-based composite embedded with sol–gel-derived Pb(Zr0.53Ti0.47)O3 thin film with different thicknesses

    Indian Academy of Sciences (India)

    Guo Dongyun; Mao Wei; Qin Yan; Huang Zhixiong; Wang Chuanbin; Shen Qiang; Zhang Lianmeng

    2012-06-01

    Pb(Zr0.53Ti0.47)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrate by sol–gel method. The effect of film thickness on microstructure, ferroelectric and dielectric properties was investigated. The single-phase PZT films were obtained with different thicknesses. PZT films with a thickness of 190–440 nm had better dielectric and ferroelectric properties. The epoxy/PZT film/epoxy sandwiched composites were prepared. The thickness of PZT films influenced their damping properties of the composites, and the epoxy-based composites embedded with 310 nm-thick PZT films had the largest damping loss factor of 0.915.

  5. NRBS, RBS, TEM and SAED characterisation of sol-gel PZT films

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D. [HH National Institute of Physics and Nuclear Engineering, P.O. Box MG-6 RO-077125 Bucharest-Magurele (Romania); Vasiliu, F. [National Institute of Materials Physics, P.O. Box MG-7, RO-077125 Bucharest-Magurele (Romania)]. E-mail: fvasiliu@infim.ro; Ionescu, P. [HH National Institute of Physics and Nuclear Engineering, P.O. Box MG-6 RO-077125 Bucharest-Magurele (Romania); Negoita, F. [HH National Institute of Physics and Nuclear Engineering, P.O. Box MG-6 RO-077125 Bucharest-Magurele (Romania)

    2005-10-15

    TEM-SAED investigations were performed on PZT films, to elucidate the role of pyrolysis conditions on orientation selection. For short pyrolysis, occurrence of the metastable fluorite and the interfacial Pt {sub x}Pb template layer are the factors inducing the (1 1 1) PZT orientation. For advanced pyrolysis, the TiO{sub 2} interfacial layer could be responsible for (1 0 0) PZT strong orientation. To further investigate the stoichiometry of PZT and interfacial layers, we performed heavy ion RBS and NRBS measurements. Only a substoichiometric TiO{sub 2-x} layer is found for the short pyrolized film whereas two Ti and O rich layers were observed for advanced pyrolysis. The thicker oxygen rich TiO{sub 2-x} bottom layer, observed by TEM and NRBS analysis, could lead to <1 0 0> texture, observed for oxidizing conditions at the interface during pyrolysis.

  6. A novel multi-degree-of-freedom thick-film ultrasonic motor.

    Science.gov (United States)

    Aoyagi, Manaba; Beeby, Steve P; White, Neil M

    2002-02-01

    This paper describes a new multi-degree-of-freedom (MDOF) ultrasonic motor that comprises few parts and is based on low-cost thick-film technology. Conventional ultrasonic motors using bulk lead zirconate titanate (PZT) or thin-film PZT layers are relatively expensive at the present time. Thick-film printed PZT technology provides the opportunity to reduce the costs of ultrasonic motors. To demonstrate the feasibility of this approach, an ultrasonic motor was fabricated from alumina using thick-film printed PZT actuators. The thick-film PZT and electrode layers were printed on a thin alumina plate, and a tiny cylinder was mounted at its center. This cylinder magnifies the lateral displacement of the stator, holds the spherical rotor, and transmits the driving force to the sphere. Three bending vibrations, B22, B30, B03, of the plate were applied to rotate the sphere. Sufficient displacements for rotating the sphere were obtained near the resonance of B22 by applying an excitation voltage of 200 V peak-to-peak via a three-phase drive circuit. Rotations in three orthogonal directions have been observed by controlling the phase of the driving signal to the PZT electrodes, and a MDOF ultrasonic motor was successfully realized.

  7. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Minh Duc

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser depositio

  8. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Duc Minh

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser depositio

  9. PZT/P(VDF-HFP) 0-3 composites as solvent-cast thin films: preparation, structure and piezoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Wegener, Michael; Arlt, Kristin [Functional Polymer Systems, Fraunhofer Institute for Applied Polymer Research (IAP), Geiselbergstrasse 69, 14476 Potsdam-Golm (Germany)], E-mail: michael.wegener@iap.fraunhofer.de

    2008-08-21

    Composite films of lead zirconate titanate (PZT) and poly(vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP)) were prepared as 100 {mu}m thin films by solvent casting. Within the 0-3 composites, the ceramic-volume fraction was varied between 0.19 and 0.65, which yielded films with different structural and dielectric properties. These influenced the piezoelectric properties of the composite films found after electric poling, which was performed here at room temperature. The piezoelectric activity, with a maximum piezoelectric coefficient of 11 pC N{sup -1} in the film-thickness direction, originates from the polarization of the embedded ceramic particles as proved by poling experiments in corona discharges as well as in direct contact.

  10. Liquid Density Sensing Using Resonant Flexural Plate Wave Device with Sol-Gel PZT Thin Films

    CERN Document Server

    Yu, Jyh-Cheng

    2008-01-01

    This paper presents the design, fabrication and preliminary experimental results of a flexure plate wave (FPW) resonator using sol-gel derived lead zirconate titanates (PZT) thin films. The resonator adopts a two-port structure with reflecting grates on the composite membrane of PZT and SiNx. The design of the reflecting grate is derived from a SAW resonator model using COM theory to produce a sharp resonant peak. The comparison between the mass and the viscosity effects from the theoretical expression illustrates the applications and the constraints of the proposed device in liquid sensing. Multiple coatings of sol-gel derived PZT films are adopted because of the cost advantage and the high electromechanical coupling effect over other piezoelectric films. The fabrication issues of the proposed material structure are addressed. Theoretical estimations of the mass and the viscosity effects are compared with the experimental results. The resonant frequency has a good linear correlation with the density of low v...

  11. Multiscale numerical study on ferroelectric nonlinear response of PZT thin films (Conference Presentation)

    Science.gov (United States)

    Wakabayashi, Hiroki; Uetsuji, Yasutomo; Tsuchiya, Kazuyoshi

    2017-06-01

    PZT thin films have excellent performance in deformation precision and response speed, so it is used widely for actuators and sensors of Micro Electro Mechanical System (MEMS). Although PZT thin films outputs large piezoelectricity at morphotropic phase bounfary (MPB), it shows a complicated hysteresis behavior caused by domain switching and structural phase transition between tetragonal and rhombohedral. In general, PZT thin films have some characteristic crystal morphologies. Additionally mechanical strains occur by lattice mismatch with substrate. Therefore it is important for fabrication and performance improvement of PZT thin films to understand the relation between macroscopic hysteresis response and microstructural changes. In this study, a multiscale nonlinear finite element simulation was proposed for PZT thin films at morphotropic phase boundary (MPB) on the substrate. The homogenization theory was employed for scale-bridging between macrostructure and microstructure. Figure 1 shows the proposed multiscale nonlinear simulation [1-3] based on the homogenization theory. Macrostructure is a homogeneous structure to catch the whole behaviors of actuators and sensors. And microstructure is a periodic inhomogeneous structure consisting of domains and grains. Macrostructure and microstructure are connected perfectly by homogenization theory and are analyzed by finite element method. We utilized an incremental form of fundamental constitutive law in consideration with physical property change caused by domain switching and structural phase transition. The developed multiscale finite element method was applied to PZT thin films with lattice mismatch strain on the substrate, and the relation between the macroscopic hysteresis response and microscopic domain switching and structural phase transition were investigated. Especially, we discuss about the effect of crystal morphologies and lattice mismatch strain on hysteresis response.

  12. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    KAUST Repository

    Giouroudi, Ioanna

    2013-05-17

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  13. Design, Modeling and Optimization of a Piezoelectric Pressure Sensor based on a Thin-Film PZT Membrane Containing Nanocrystalline Powders

    National Research Council Canada - National Science Library

    Vahid Mohammadi; Mohammad Hossein Sheikhi

    2009-01-01

    ...^ thin film has been presented and then a pressure sensor based on multilayer thin-film PZT diaphragm contain of Lead Zirconate Titanate nanocrystalline powders was designed, modeled and optimized...

  14. Improvement of the fatigue and the ferroelectric properties of PZT films through a LSCO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Sofia A.S., E-mail: sofiarodrigues@fisica.uminho.pt; Silva, José P.B.; Khodorov, Anatoli; Martín-Sánchez, Javier; Pereira, M.; Gomes, M.J.M.

    2013-11-01

    Highlights: • Pulsed laser deposited PZT thin films. • Seed layer effect on the structural and ferroelectric properties of the PZT films. • The stability of P{sub r} was improved with the introduction of the LSCO layer. -- Abstract: The ability to optimizate the preparation of Lead Zirconate Titanate (PZT) films on platinized Si substrate by pulsed laser deposition was demonstrated. The effect of the modification of the interface film/electrode through the use of a (La,Sr)CoO{sub 3} (LSCO) seed layer on the remnant polarization, fatigue endurance and stress in PZT films was studied. An improvement on the ferroelectric properties was found with the using of the LSCO layer. A remnant polarization (P{sub r}) of 19.8 μC/cm{sup 2} and 4.4 μC/cm{sup 2} for films with and without the LSCO layer were found. In the same way the polarization fatigue decreases significantly after deposition of the LSCO layer between the film and substrate. Atomic force microscopy (AFM) images revealed a different growth process in the films. Current–voltage (I–V) measurements showed that the use of LSCO seed layer improves the leakage current and, on the other hand the conduction mechanisms in the film without LSCO, after the fatigue test, was found to be changed from Schottky to Poole–Frenkel. The trap activation energy (about 0.14 eV) determined from Poole–Frenkel mode agrees well with the energy level of oxygen vacancies. The films stresses were estimated by XRD in order to explain the improvement on the structure and consequentially ferroelectric properties of the films. The model proposed by Dawber and Scott was found to be in agreement with our experimental data, which seems to predict that the oxygen vacancies play an important role on fatigue.

  15. Enhancement of ferroelectric and piezoelectric properties in PZT thin films with heterolayered structure

    NARCIS (Netherlands)

    Nguyen, D.M.; Nguyen, Chi T.Q.; Trinh, Thong Q.; Nguyen, Tai; Pham, Thao N.; Rijnders, A.J.H.M.; Vu, Hung N.

    2013-01-01

    This paper reports the latest experimental results of multilayered, heterolayered, and alternating heterolayered PZT thin films obtained by spin coating on Pt/Ti/SiO2/Si wafers using Zr-rich (P60) and Ti-rich (P40) solutions which were prepared by sol–gel route process. The ferroelectric and piezoel

  16. Structure and electrical properties of PZT/LNO/PT multilayer films on stainless steel substrates

    Institute of Scientific and Technical Information of China (English)

    2012-01-01

    PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric proper...

  17. Electrodynamic properties of porous PZT-Pt films at terahertz frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Komandin, Gennady A.; Porodinkov, Oleg E.; Spektor, Igor E.; Volkov, Alexander A. [Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Vorotilov, Konstantin A.; Seregin, Dmitry S.; Sigov, Alexander S. [Moscow Technological University (MIREA), Moscow (Russian Federation)

    2017-01-15

    Electrodynamics of Si-SiO{sub 2}-TiO{sub 2}-Pt-PZT heterostructures is studied in the frequency range from 5 to 5000 cm{sup -1} by monochromatic BWO (backward wave oscillator) and infrared Fourier-transform spectroscopy techniques to derive the dielectric characteristics of the sol-gel porous ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} films. Broad frequency band dielectric response of PZT films with different density is constructed using the oscillator dispersion models. The main contribution to the film permittivity is found to form at frequencies below 100 cm{sup -1} depending strongly and non-linearly on the film medium density. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Optimization of the low-temperature MOCVD process for PZT thin films

    CERN Document Server

    Wang, C H; Choi, D J

    2000-01-01

    Pb(Zr sub X Ti sub 1 sub - sub X)O sub 3 (PZT) thin films of about 0.34 nm were successfully grown at a low temperature of 500 .deg. C by metalorganic chemical vapor deposition with a beta-diketonate complex of Pb(tmhd) sub 2 , zirconium t-butoxide, and titanium isopropoxide as source precursors. Ferroelectric capacitors of a Pt/PZT/Pt configuration were fabricated, and their structural and electrical properties were investigated as a function of the input Pb/(Zr+Ti) and Zr/(Zr+Ti) source ratios. The structure of the as-grown films at 500 .deg. C changed from tetragonal to pseudocubic with increasing the Zr/(Zr+Ti) ratio above an input Pb/(Zr+Ti) source ratio of 5.0 while a 2nd phase of ZrO sub 2 was only observed below Pb/(Zr+Ti) ratio of 5.0, regardless of the Zr/(Zr+Ti) ratio. The dielectric constant and loss of the PZT films were 150-1200 and 0.01-0.04 at 100 kHz, respectively, Leakage current densities decreased with increasing the Zr/(Zr+Ti) ratio. The process window for growing a single phase PZT is ve...

  19. In situ X-ray diffraction based investigation of crystallization in solution deposited PZT thin films

    Science.gov (United States)

    Nittala, Krishna

    Solution deposited PZT based thin films have potential applications in embedded decoupling capacitors and pulse discharge capacitors. During solution deposition, precursor solution is deposited onto a substrate to obtain an amorphous film. The film is then crystallized by heating it at a high temperature (˜600 - 700°C). Conditions during the crystallization anneal such as precursor stoichiometry in solution, heating rate and adhesion layer in the substrate are known to influence phase and texture evolution in these films. However, a mechanistic understanding of the changes taking place in these thin films during crystallization is lacking. A better understanding of the crystallization processes in these thin films could enable tailoring the properties of thin films to suit specific applications. To explore the crystallization process in solution deposited PZT thin films, high temperature in situ laboratory and synchrotron X-ray diffraction based techniques were developed. Taking advantage of the high X-ray flux available at synchrotron facilities such as beamline 6-ID-B, Advanced Photon Source, Argonne National Laboratory, crystalline phases formed in the thin films during crystallization at the high heating rates (0.5 -- 60°C/s) typically used during film processing could be measured. Using a 2-D detector for these measurements allowed the simultaneous measurement of both phase and texture information during crystallization. Analytical treatment of the unconventional diffraction geometry used during the synchrotron based measurements was performed to develop methodologies for quantitative estimation of texture components. The nominal lead content in the starting solutions and the heating rate used during crystallization was observed to influence the sequence of phases formed during crystallization of the films. In films crystallized at fast heating rates, titanium segregation, probably due to diffusion of titanium from the adhesion layer, was observed. To

  20. Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

    Science.gov (United States)

    Guiffard, B.; Seveno, R.

    2015-01-01

    In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

  1. Temperature dependent mechanical property of PZT film: an investigation by nanoindentation.

    Directory of Open Access Journals (Sweden)

    Yingwei Li

    Full Text Available Load-depth curves of an unpoled Lead Zirconate Titanate (PZT film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains.

  2. Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

    Science.gov (United States)

    Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

    2012-12-01

    In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

  3. Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Jian; Batra, Vaishali; Han, Hui; Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Pandey, Raghvendar K. [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-09-15

    The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

  4. Metallo-Organic Solution Deposition of Ferroelectric PZT Films

    Science.gov (United States)

    1992-09-09

    perovskite structure was reduced by the presence of a cubic pyrochiore-like phase related to Pb 2Ti20 6 [24]. The films consolidated at 300 and 400"C are...coherent imaging, solar cell physics, battery electrochemistry, battery testing and evaluation. Mechanics and Materials Technology Center: Evaluation...films. For example, lead al- koxide and dtanium alkoxide compounds can be hydrolyzed to form hydroxide-alkoidde com- pounds: Pb (OR)2 + H20--* Pb (OR

  5. Electrical properties of (0 0 1)-textured Pb(Zr,Ti)O 3 thin films with different BaPbO 3 thicknesses

    Science.gov (United States)

    Liang, Chun-Sheng; Wu, Jenn-Ming

    2006-05-01

    The microstructure and electrical properties of highly (0 0 1)-textured lead zirconate titanate (PZT) thin films deposited on BaPbO 3 (BPO) at 475 °C by RF-magnetron sputtering were studied. Twenty-three, 65, and 136 nm-thick BPOs were adopted in this study. The dielectric constant is approximately 433 for Pt/PZT/BPO (23 nm), 443 for Pt/PZT/BPO (65 nm), and 466 for Pt/PZT/BPO (136 nm). The remanant polarization values in these three capacitors are 13.5, 14.9, and 10.9 μC/cm 2, and the coercive field values are 76.6, 71.2, and 54.5 kV/cm, respectively. The fatigue endurance of PZT films decreases with the thickness of BPO. The thickness of BPO layer not only influences the crystallinity of PZT films, but also the a-domain populations in PZT films. The variation of resultant electrical properties is attributed partly to the improvement of crystallinity, and partly to the population of a-domain. The effect of the former is remarkable when the BPO is thin while the latter is dominant when the BPO is thick.

  6. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    Energy harvesting, known also as energy scavenging, covers a great body of technologies and devices that transform low grade energy sources such as solar energy, environmental vibrations, thermal energy, human motion into usable electrical energy. In this paper vibrations are used as energy source...... and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  7. Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction

    Science.gov (United States)

    Delimova, L. A.; Guschina, E. V.; Seregin, D. S.; Vorotilov, K. A.; Sigov, A. S.

    2017-06-01

    The behavior of the transient current at different preliminary polarizations has been studied in Pb(ZrTi)O3 (PZT) films with various grain structures. To affect the grain structure, PZT films were prepared by chemical solution deposition with a two-step crystallization process using combination of seed layers with a low Pb excess and the main layers with a 30 wt. % Pb excess. Some films were prepared with a fixed Pb excess in all the deposited layers. We found that the lead excess and the seed layer crystalline structure can affect the grain-boundary conduction which, in turn, influences the polarization dependence of the transient current and the appearance of current peaks which look like the so-called negative differential resistance region in the current-voltage curves. We show that the emergence of the current peaks in the PZT films depends on (i) whether the current flows inside the ferroelectric phase (grains) or outside, along grain boundaries and (ii) whether the applied bias direction is parallel or opposite to the polarization vector. A correlation between the grain-boundary conduction and current-polarization dependences is confirmed by the local current distribution measured by conductive atomic force microscopy. Possible mechanisms responsible for specific features of the transient current and appearance of the current peaks are discussed. The effect of grain-boundary conduction on the behavior of the current may be significant and should be taken into account in ferroelectric random access memory whose readout operation assumes registration of the magnitude of the polarization switching current under positive bias.

  8. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  9. Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices

    Science.gov (United States)

    Yoon, Sang Hoon

    The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic

  10. Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

    Science.gov (United States)

    Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

    2012-01-01

    In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

  11. Investigation of Co-doped PZT films deposited by rf-magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Felicia Gheorghiu

    2014-09-01

    Full Text Available The focus of the present paper is to describe the preparation procedure and to investigate the microstructural characteristics and the electrical properties of Co-doped PZT films deposited by rf-sputtering by using a “mixture” target system onto Au-electroded Al2O3 ceramic substrates. The X-ray diffraction patterns of the Co-doped PZT thin films as a function of the annealing temperature confirmed the formation of pure perovskite phase started with temperatures of 600 °C, but a perfect crystallization was achieved at a temperature of ∼700 °C. The microstructures strongly depend on the thermal treatment temperature and indicated a discontinuous surface without large pores and with a bimodal grain size distribution. The XPS analysis demonstrated that the dopant element is present mainly in its Co2+ state. The macroscopic P(E hysteresis loops were recorded in different locations of the films surface and demonstrated ferroelectric behaviour with a resistive leakage contribution.

  12. Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

    Directory of Open Access Journals (Sweden)

    Yoshiki Minemura

    2015-07-01

    Full Text Available Lead zirconate titanate (PZT film with polar axis orientation was grown on a SUS 316L stainless steel substrate with the help of a Ca2Nb3O10 nanosheet (ns-CN layer that had a pseudo-perovskite-type crystal structure. The ns-CN buffer layer was supported on a platinized SUS 316L (Pt/SUS substrate, followed by chemical solution deposition (CSD of the PZT films with tetragonal symmetry (Zr/Ti =40/60. The PZT films consisting of c-domain, with [001]-axis orientation of the perovskite unit cell, were deposited on the ns-CN/Pt/SUS substrate owing to (i epitaxial lattice matching between the unit cell of PZT and substrate surface and (ii in-plane thermal stress applied to the PZT film during cooling-down step of CSD procedure. The c-domain-oriented PZT film on ns-CN/Pt/SUS substrate exhibited enhanced remanent polarization of approximately 52 μC/cm2 and lowered dielectric permittivity of approximately 230, which are superior to those of conventional PZT films with random crystal orientation and comparable to those of epitaxial PZT films grown on (100SrRuO3//(100SrTiO3 substrates.

  13. Effect of thickness on the stress and magnetoelectric coupling in bilayered Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}-CoFe{sub 2}O{sub 4} films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing, E-mail: wang-jing@nuaa.edu.cn, E-mail: cwnan@tsinghua.edu.cn [State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Li, Zheng; Wang, Jianjun; Nan, Cewen, E-mail: wang-jing@nuaa.edu.cn, E-mail: cwnan@tsinghua.edu.cn [School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China); He, Hongcai [State Key Lab of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2015-01-28

    Magnetoelectric bilayered Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}-CoFe{sub 2}O{sub 4}(PZT-CFO) films with different PZT thicknesses were grown on (111)Pt/Ti/SiO{sub 2}/Si substrates using chemical solution spin-coating. Structural characterization by X-ray diffraction and electron microscopy shows pure phases and well-defined interfaces between the PZT and CFO films. The CFO-PZT-substrate structure effectively alleviates the substrate clamping effect for the CFO layer, showing appreciable magnetoelectric responses in the composite films. Both the direct magnetoelectric effect and the magnetic field-induced Raman shifts in the A{sub 1}(TO{sub 1}) soft mode of PZT demonstrate the magnetic-mechanical-electric coupling in the films. The results also indicate that with a constant CFO layer thickness, the thickness of the PZT layer plays an important role in the stress relaxation and strong magnetoelectric coupling. The coupling could be further enhanced by increasing the CFO thickness, optimizing the volume (thickness) fraction of the PZT thickness, and releasing the clamping effect from the substrate.

  14. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    Energy Technology Data Exchange (ETDEWEB)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

    2015-07-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

  15. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    Science.gov (United States)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  16. Shoe-mounted vibration energy harvester of PZT piezoelectric thin films on metal foils

    Science.gov (United States)

    Nishi, T.; Ito, T.; Hida, H.; Kanno, I.

    2016-11-01

    This paper describes shoe-mounted piezoelectric vibration energy harvesters (PVEHs). The PVEHs were fabricated from Pb(ZrTi)O3 (PZT) thin films which were directly deposited onto Pt/Ti-coated stainless steel foil by rf-magnetron sputtering. We experimentally and theoretically evaluated impulse responses of the PVEHs by applying a simple impulse input on the energy harvesters, typical damped free vibration behaviour was clearly observed, and the output signal was in good agreement with the theoretical value. We measured the output power by applying the impulse input with an optimal load resistance of 33.9 kΩ. The maximum output power was approximately 20 μW, which correspond with the calculated value based on theoretical equation. From these results, the theoretical equation we derived might be helpful for design purposes of the shoe-mounted PVEHs.

  17. The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film

    Institute of Scientific and Technical Information of China (English)

    WANG LongHai; Yu Jun; ZHAO SuLing; ZHENG ChaoDuan; WANG YunBo; GAO JunXiong

    2007-01-01

    3The Research & Test Center of Materials, Wuhan University of Technology, Wuhan 430070, ChinaThe highly oriented perovskite-phase PT/PZT/PT ferroelectric thin film was prepared by sol-gel method. The domain structures and polarization retention properties were investigated by scanning force microscopy. The amplitude and phase images of piezoresponse show complex various contrasts of dark, bright and gray.The complex variation of contrast in piezoresponse images results from the perplexing orientation of grains and arrangement of domains in the ferroelectric films.The bright and dark areas in phase images correspond to top-to-bottom and bottom-to-top polarization oriented c-domain, respectively. The gray areas are c-domains with the polarization vector deviating from the direction normal to the film plane. The surface potential images of EFM are bright contrast, which is due to positive charges trapped on the film surface after being polarized by positive voltage. And the brighter contrast is obtained from the higher electric field. The time-dependent surface potential images and line potential profiles show that the potential decays with time. And the decay in the region polarized by higher electric field is faster, especially at 15 min. This indicates that the polarization retention is related to the polarized electric field. Better retention properties may be obtained from a proper polarized electric field.

  18. The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The highly oriented perovskite-phase PT/PZT/PT ferroelectric thin film was pre- pared by sol-gel method. The domain structures and polarization retention proper- ties were investigated by scanning force microscopy. The amplitude and phase images of piezoresponse show complex various contrasts of dark, bright and gray. The complex variation of contrast in piezoresponse images results from the per- plexing orientation of grains and arrangement of domains in the ferroelectric films. The bright and dark areas in phase images correspond to top-to-bottom and bot- tom-to-top polarization oriented c-domain, respectively. The gray areas are c-domains with the polarization vector deviating from the direction normal to the film plane. The surface potential images of EFM are bright contrast, which is due to positive charges trapped on the film surface after being polarized by positive volt- age. And the brighter contrast is obtained from the higher electric field. The time-dependent surface potential images and line potential profiles show that the potential decays with time. And the decay in the region polarized by higher electric field is faster, especially at 15 min. This indicates that the polarization retention is related to the polarized electric field. Better retention properties may be obtained from a proper polarized electric field.

  19. Study of mechanical-magnetic and electromagnetic properties of PZT/Ni film systems by a novel bulge technique

    Science.gov (United States)

    Liu, Q.; Zhou, W.; Ding, J.; Xiao, M.; Yu, Z. J.; Xu, H.; Mao, W. G.; Pei, Y. M.; Li, F. X.; Feng, X.; Fang, D. N.

    2017-02-01

    A novel multiple functional bulge apparatus was designed to study the mechanical-electronic-magnetic characteristics of electromagnetic materials. The elastic modulus difference effect of Ni thin film was observed and it was about 22.16% in the demagnetized and magnetization saturated states. The mechanical-magnetic behaviors of Ni and lead-titanate zirconate (PZT)/Ni films were in-situ measured by using the new bulge systems, respectively. The evolutions of three key material properties in hysteresis loop including saturation magnetization, remanent magnetization and coercive field were discussed in detail, respectively. The mechanisms of mechanical-magnetic coupled behaviors of Ni and PZT/Ni films were analyzed with the aid of the competitive relationship of stress and magnetization. Similarly, the electronic-magnetic characteristics of PZT/Ni films were in-situ measured by using this experimental system. The evolution of saturated magnetization, remanent magnetization and coercive field Kerr signals were discussed with the magneto-elastic anisotropy energy point. In this paper, a suitable mechanical-electronic-magnetic bulge measurement system was established, which would provide a good choice for further understanding the multi field coupling characteristics of electromagnetic film materials.

  20. Piezoelectric ceramic thick films deposited on silicon substrates by screen printing

    Science.gov (United States)

    Yao, Kui; He, Xujiang; Xu, Yuan; Chen, Meima

    2004-07-01

    Screen-printing processes offer advantages in producing directly patterned and integrated piezoelectric elements, and fill an important technological gap between thin film and bulk ceramics. However, several existing problems in the screen-printed piezoelectric thick films, such as the poor reliability and the required high sintering temperature, are significantly limiting their applications. In this work, lead zirconate titanate (PZT) ceramic films of 30 μm in thickness were deposited on Pt-coated silicon substrates by the screen-printing process, in which the ceramic pastes were prepared through a chemical liquid-phase doping approach. Porous thick films with good adhesion were formed on the substrates at a temperature of 925°C. Stable out-of-plane piezoelectric vibration of the thick films was observed with a laser scanning vibrometer (LSV), and the piezoelectric dilatation magnitude was determined accordingly. Our piezoelectric measurements through the areal displacement detection with LSV exhibited distinct advantages for piezoelectric film characterization, including high reliability, high efficiency, and comprehensive information. The longitudinal piezoelectric coefficients of the thick films were calculated from the measured dilatation data through a numerical simulation. High piezoelectric voltage constants were obtained due to the very low dielectric constant of the porous thick films. The application potentials of our screen-printed thick films as integrated piezoelectric sensors are discussed.

  1. Energy harvesting using piezoelectric thick films fabricated by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Shih, J.L. [McGill Univ., Montreal, PQ (Canada). Dept. of Electrical and Computer Engineering; Kobayashi, M.; Moisan, J.F.; Jen, C.K. [National Research Council of Canada, Boucherville, PQ (Canada). Industrial Materials Inst.

    2008-07-01

    Energy harvesting has been touted as a promising technology to power wireless devices. One of the common energies to be harvested is induced by mechanical vibrations. Piezoelectric materials are often used to get such energy. This study focused on a vibration-based energy harvesting device. Very flexible vibrators using lead-zirconate-titanate (PZT) ceramics were needed. Therefore, a sol-gel spray technology was used to fabricate PZT thick film directly onto metal membranes to serve as mechanical vibrators. The sol-gel process is an economical approach with excellent mass production appeal for both unimorph and bimorph sensors. For this study, the density of the PZT film was less than 85 per cent of the bulk PZT. Using a 20 mm diameter unimorph, the voltage generated from a 5 mm deflection displacement was 13.6 volts peak-to-peak at 10 Hz. With a load resistance of 150 K ohms, the measured average power generated by this sensor was estimated to be 41 {mu}W. A vibration test that lasted for 60 days with a frequency of 10 Hz and at a displacement of approximately 1 mm showed that the sensor is both durable and rugged. 14 refs., 7 figs.

  2. Micro-droplets lubrication film thickness dynamics

    Science.gov (United States)

    Huerre, Axel; Theodoly, Olivier; Cantat, Isabelle; Leshansky, Alexander; Valignat, Marie-Pierre; Jullien, Marie-Caroline; MMN Team; LAI Team; IPR Team; Department of Chemical Engineering Team

    2014-11-01

    The motion of droplets or bubbles in confined geometries has been extensively studied; showing an intrinsic relationship between the lubrication film thickness and the droplet velocity. When capillary forces dominate, the lubrication film thickness evolves non linearly with the capillary number due to viscous dissipation between meniscus and wall. However, this film may become thin enough that intermolecular forces come into play and affect classical scalings. We report here the first experimental evidence of the disjoining pressure effect on confined droplets by measuring droplet lubrication film thicknesses in a microfluidic Hele-Shaw cell. We find and characterize two distinct dynamical regimes, dominated respectively by capillary and intermolecular forces. In the former case rolling boundary conditions at the interface are evidenced through film thickness dynamics, interface velocity measurement and film thickness profile.

  3. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G. A.; Gerbasi, R. [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  4. Effect of geometry on hydrodynamic film thickness

    Science.gov (United States)

    Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

    1978-01-01

    The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds boundary conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

  5. Thick-film force, slip and temperature sensors for a prosthetic hand

    Science.gov (United States)

    Cranny, A.; Cotton, D. P. J.; Chappell, P. H.; Beeby, S. P.; White, N. M.

    2005-04-01

    Thick-film static and dynamic force sensors have been investigated for their suitability to measure the grip forces exerted upon an object held by a prosthetic hand, and to detect and correspondingly react to the possible slip of a gripped item. The static force sensors exploit the piezoresistive characteristics of commercially available thick-film pastes whilst the dynamic slip sensors utilize the piezoelectric behaviour of proprietary PZT (lead zirconate titanate) pastes. The sensors are located upon stainless steel cantilever type structures that will be placed at the fingertips of each digit of the prosthetic hand. Temperature sensors are also included to provide temperature compensation for the force sensors and to prevent accidental thermal damage to the prosthesis. Results have shown that the static force sensor is capable of measuring fingertip forces in excess of 100 N, with an electrical half-bridge configuration sensitivity approaching 10 µV V-1 N-1 (with scope for improvement) and maximum hysteresis below 4% of full scale, depending on the manner in which the cantilever sensor array is attached to the finger. Failure in the bonding mechanism that secures the PZT layer to the stainless steel cantilever meant that the proposed dynamic force sensor could not be evaluated. However, investigations using the same sensor design fabricated on an alumina substrate have shown the potential of the PZT dynamic force sensor to measure the vibration and hence potentially operate as a slip sensor.

  6. Silver Doped 0.9PMN-PT-0.1PZT Composite Films for very High Frequency Ultrasonic Transducer Applications.

    Science.gov (United States)

    Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Wei, Qiang; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk

    2013-05-01

    A series of silver doping concentration into the 0.9PMN-PT-0.1PZT (PMN-PT-PZT) films via the composite sol-gel technique were prepared. The crystallographic properties and microstructures of PMN-PT-PZT films with the silver dopant were investigated. Additionally, the effect of silver doping on dielectric and ferroelectric properties was examined. The results show that in general, the dielectric permittivity and remnant polarization increase as the silver doping concentration is increased. The PMN-PT-PZT+ 2.5 mol% Ag film exhibits a dielectric constant of 3,610 at 1 kHz and a remnant polarization of 57.6 µC/cm(2) at room temperature. From this silver doped film, very high frequency ultrasonic needle transducers were fabricated and evaluated. The representative transducer had the center frequency of 225 MHz with a -6 dB bandwidth of 29% (65 MHz) and 62 dB insertion loss. The performance of this transducer is comparable to other composite sol-gel films transducer. The results suggest that this silver-doped PMN-PT-PZT film is a promising candidate as an alternative piezoelectric film for very high frequency transducer applications.

  7. Silver doped 0.9PMN-PT-0.1PZT composite films for very high frequency ultrasonic transducer applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Hsiu-Sheng [University of Southern California, Department of Biomedical Engineering and NIH Transducer Resource Center, Los Angeles, CA (United States); University of Southern California, Mork Family Department of Chemical Engineering and Materials Science, Los Angeles, CA (United States); Benjauthrit, Vatcharee; Zhou, Qifa; Shung, K.K. [University of Southern California, Department of Biomedical Engineering and NIH Transducer Resource Center, Los Angeles, CA (United States); Wei, Qiang; Huang, Yuhong [Chemat Technology Inc., Northridge, CA (United States)

    2013-05-15

    A series of silver doping concentration into the 0.9PMN-PT-0.1PZT (PMN-PT-PZT) films via the composite sol-gel technique were prepared. The crystallographic properties and microstructures of PMN-PT-PZT films with the silver dopant were investigated. Additionally, the effect of silver doping on dielectric and ferroelectric properties was examined. The results show that in general, the dielectric permittivity and remnant polarization increase as the silver doping concentration is increased. The PMN-PT-PZT+2.5 mol% Ag film exhibits a dielectric constant of 3,610 at 1 kHz and a remnant polarization of 57.6 {mu}C/cm{sup 2} at room temperature. From this silver doped film, very high frequency ultrasonic needle transducers were fabricated and evaluated. The representative transducer had the center frequency of 225 MHz with a -6 dB bandwidth of 29 % (65 MHz) and 62 dB insertion loss. The performance of this transducer is comparable to other composite sol-gel films transducer. The results suggest that this silver-doped PMN-PT-PZT film is a promising candidate as an alternative piezoelectric film for very high frequency transducer applications. (orig.)

  8. Ferroelectric/electrode interfaces: Polarization switching and reliability of PZT capacitors in nonvolatile memories

    Science.gov (United States)

    Chen, Ye (Mike)

    The objective of this work was to investigate how the interface between electrode and PZT influences the PZT capacitor reliability. In order to conduct a well controlled experiment only the top-electrode PZT film interface was modified to study its effect on switching characteristics (i.e. hysteresis loop), voltage switching endurance and polarization retention of state of the art MOCVD grown film (nominally identical). The polycrystalline PZT film (50 -- 90 nm thick) are dominantly tetragonal with small fractions of the rhombohedral phase. XPS analyses of the as-deposited PZT film found the existence of a Pb-rich carbonate surface layer on all PZT film provided by industrial collaborators. Using materials characterizations such as in-situ XPS and ARXPS in tandem with electrical measurements it was determined that the Pb-rich surface layer appears to be an engineered sacrificial layer, which is beneficial in maximizing the switchable polarization and in improving the endurance and opposite-state retention behavior of PZT based FRAM capacitors with Pt electrode. This is because the excess Pb on the PZT surface and the Pb in the surface PZT reacts readily with the Pt during the Pt top electrode deposition creating a Pb-deficient non-ferroelectric interface layer between the top electrode and the PZT film. ARXPS analyses showed that this defective layer was approximately one nanometer thick and this is consistent with the hysteresis loop measurements that indicated a similar interface layer thickness. Inferior switching endurance and polarization retention was found in PZT film with an engineered initial thicker defective interface layer (via a HNO3-clean of the PZT surface prior to the top electrode deposition). This could be due to the fact that this defective interface layer may have thickened during the voltage cycling and/or retention bake. The thickening could be caused by greater carrier trapping and/or interface reaction between the Pb and the Pt. This

  9. Research on Composite PZT for Largedisplacement Actuators

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new kind of composite piezoelectric ceramics for large-displacement actuators, which were composed of reduced and unreduced layers, was prepared from normal PZT by chemical reduction. The stress distribution inside the composite PZT was researched and the chemical reduction conditions were explored.The actuating properties of reduced PZT were also studied. It is found that the optimal ratio of reduced layer thickness for the composite structure is 0.3; Reduced composite PZT has lower resonance frequency and 3 times larger displacement than that of the traditional PZT; Re-oxide phases are found in reduced layer of composite PZT showing the reduction procedure needs to be improved.

  10. Nano-Hydroxyapatite Thick Film Gas Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India)

    2011-12-10

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  11. Percolation effect in thick film superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

    1994-12-31

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

  12. Electric properties of textured (K$_{0.44}$Na$_{0.52}$Li$_{0.04}$)(Nb$_{0.86}Ta$_{0.10}$Sb$_{0.04}$)O$_3$ thick film prepared by screen printing method

    Indian Academy of Sciences (India)

    FANG FU; JIWEI ZHAI; ZHENGKUI XU

    2016-08-01

    Textured (K$_{0.44}$Na$_{0.52}$Li$_{0.04}$) (Nb$_{0.86}$Ta$_{0.10}$Sb$_{0.04}$)O$_3$ thick film was fabricated by the screen printing method with plate-like NaNbO3 particles as template. Thick film with 75% grain orientation was prepared. Remnant polarization and coercive field observed from the P–E loops of textured thick film were 3.6 $\\mu$C cm$^{−2}$ and 21 kV cm$^{−1}$, respectively. Textured (K$_{0.44}$Na$_{0.52}$Li$_{0.04}$) (Nb$_{0.86}$Ta$_{0.10}$Sb$_{0.04}$)O$_{3}$ thick film exhibited diffusion behaviour by analysing the temperature dependence of permittivity and loss tangent. The result of leakage current density showed a conduction mechanism of Schottky emission. Piezoelectric (PZT) properties of the thick film were characterized by the relationship of unipolar strain and applied electric field and the PZT constant $d^∗_{33}$ of textured thick film reached to 150 pm V$^{−1}$. Nonlinear PZT property of the thick film was investigated by Rayleigh law.

  13. Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2015-01-01

    Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

  14. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  15. Conduction Mechanisms in Thick Film Microcircuits

    Science.gov (United States)

    1975-12-01

    AREMCO 3100 Screen Printing Machine 53 3.11 Squeegee Design 55 3.12 Effect of Screen Printer Parameters on Filin Weight Deposited 59 3.13 Variation of...deviation of printing performance. This is discussed in greater detail sIfter the materials and machine are described. 3.5.2 Screening Material and...beyoni the range of monolithic technology can be satisfied by combining monolithic and thick film technologies. Design functions such as flexibility

  16. Flow fields in soap films: Relating viscosity and film thickness

    Science.gov (United States)

    Prasad, V.; Weeks, Eric R.

    2009-08-01

    We follow the diffusive motion of colloidal particles in soap films with varying h/d , where h is the thickness of the film and d is the diameter of the particles. The hydrodynamics of these films are determined by looking at the correlated motion of pairs of particles as a function of separation R . The Trapeznikov approximation [A. A. Trapeznikov, Proceedings of the 2nd International Congress on Surface Activity (Butterworths, London, 1957), p. 242] is used to model soap films as an effective two-dimensional (2D) fluid in contact with bulk air phases. The flow fields determined from correlated particle motions show excellent agreement with what is expected for the theory of 2D fluids for all our films where 0.6≤h/d≤14.3 , with the 2D shear viscosity matching that predicted by Trapeznikov. However, the parameters of these flow fields change markedly for thick films (h/d>7±3) . Our results indicate that three-dimensional effects become important for these thicker films, despite the flow fields still having a 2D character.

  17. Residual Stress Analysis in Thick Uranium Films

    Energy Technology Data Exchange (ETDEWEB)

    Hodge, A M; Foreman, R J; Gallegos, G F

    2004-12-06

    Residual stress analysis was performed on thick, 1.0 to 25 {micro}m, depleted Uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0-300V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses.

  18. Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

    Institute of Scientific and Technical Information of China (English)

    GAO Mei-Zhen; JOB R; XUE De-Sheng; FAHRNER W R

    2008-01-01

    @@ Indium-tin-oxide (ITO) films deposited on crystalline silicon wafer and Coming glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical reflectance of ITO films are characterized. The results show that when the film thickness is less than 4Ohm, the resistivity and optical reflectance of the ITO tilm changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.

  19. Determination of thin film refractive index and thickness by means of film phase thickness

    Science.gov (United States)

    Nenkov, Milen; Pencheva, Tamara

    2008-06-01

    A new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38-0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel's method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.

  20. Thick film traps with an irregular film. Preparation and evaluation.

    Science.gov (United States)

    Kloskowski, Adam; Pettersson, Johan; Roeraade, Johan

    2004-05-07

    A new method for preparation of sorbent-based ultra-thick film traps for concentration of trace volatile components from gaseous matrices is described. The procedure is based on blowing a prepolymer (polydimethylsiloxane) through a capillary tube, forming an irregular film of stationary phase. Subsequently, the prepolymer is immobilized in a few seconds by heating to 200 degrees C. Evaluation of the performance of the new traps showed that the loss of efficiency, compared to regular smooth film traps is only on the order of 20-30%. In terms of breakthrough volume, this loss in performance is rather insignificant. The technology is extremely simple and allows a rapid and cheap production of a large number of ultra-thick film traps, even in non-specialized laboratories. The method can be applied to any type of cross-linkable stationary phase, thereby expanding the scope of sorbent-based trapping and preconcentration concept. Many applications are anticipated in trace and ultra-trace analysis in a wide range of fields, such as environmental chemistry, polymers, food and process analysis.

  1. Measurement Method of the Thickness Uniformity for Polymer Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several methods for investigating the thickness uniformity of polymer thin films are presented as well as their measurement principles. A comparison of these experimental methods is given.The cylindrical lightwave reflection method is found to can obtain the thickness distribution along a certain direction.It is a simple and suitable method to evaluate the film thickness uniformity.

  2. Mechanical and Ferroelectric Response of Highly Textured PZT Films for Low Power MEMS

    Science.gov (United States)

    2012-10-01

    titanate films", Journal of Applied Physics , 89 (2), pp. 1336-1348, 2001. 4. Zavala, G., Fendler, J., Mckinstry, S. “Characterization of ferroelectric lead...zirconate titanate films by scanning force microscopy, Journal of Applied Physics , 81 (11), pp. 7480-7491, 1997. 5. Hidaka, T., et al

  3. Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si ( 111 ) sample

    Institute of Scientific and Technical Information of China (English)

    ZHU, Yong-Fa(朱永法); CAO, Li-Li(曹立礼); YAN, Pei-Yu(阎培渝); LI, Long-Tu(李龙土); YI, Tao(易涛)

    2000-01-01

    The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. The results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx, TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer must be not thinner than 140 nm. The existence of the Pt layer not only promotes the crystallization of PZT layer to form a perovskite phase but also improves dielectric and ferroelectric performances of the PZT layer.

  4. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  5. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  6. Integrated thick-film nanostructures based on spinel ceramics.

    Science.gov (United States)

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-03-26

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications.

  7. Integrated thick-film nanostructures based on spinel ceramics

    OpenAIRE

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-01-01

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for...

  8. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  9. Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films

    Institute of Scientific and Technical Information of China (English)

    Chatnapa Duangdee; Noppadon Tangpukdee; Srivicha Krudsood; Polrat Wilairatana

    2012-01-01

    Objective: To determine the frequency of malaria parasite detection from the buffy coat blood ilms by using capillary tube in falciparum malaria patients with negative conventional thick ilms. Methods: Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification.Results:Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. Conclusions: The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

  10. Giant electrocaloric effect in PZT bilayer thin films by utilizing the electric field engineering

    Science.gov (United States)

    Zhang, Tiandong; Li, Weili; Cao, Wenping; Hou, Yafei; Yu, Yang; Fei, Weidong

    2016-04-01

    The enhancement of the electrocaloric effect (ECE) was achieved by the amplifying effect of applied electric field through devising the thin films' structure. The PbZr0.95Ti0.05O3/PbZr0.52Ti0.48O3 bilayer structured thin films were fabricated on a Pt(111)/Ti/SiO2/Si substrate using sol-gel method. The ΔS = 20.5 J K-1 kg-1 and ΔT = 24.8 K for bilayer thin films is achieved around 125 °C much below Tc, which is caused by the amplifying electric field induced phase transition of OAFE/RFE in PZr0.95Ti0.05O3 layer. It is also worth mentioning that the films exhibit outstanding ECE at room temperature; ΔS = 11.9 J K-1 kg-1 and ΔT = 10.7 K are observed, which are attributed to the effect of amplifying electric field in PbZr0.95Ti0.05O3 layer and RFE/TFE at morphotropic phase boundaries (MPB) in PbZr0.52Ti0.48O3 layer. This result indicates that to amplify the local electric field engineering and to maximize the number of coexisting phases in heterostructures or multilayer thin films may be an effective way for cooling applications.

  11. Design and fabrication of aspherical bimorph PZT optics

    CERN Document Server

    Tseng, T C; Yeh, Z C; Perng, S Y; Wang, D J; Kuan, C K; Chen, J R; Chen, C T

    2001-01-01

    Bimorph piezoelectric optics with a third-order-polynomial surface is designed and a prototype is fabricated as active optics. Two pairs of silicon (Si) and lead zirconate titanate (PZT) piezoelectric ceramic are bonded as Si-PZT-PZT-Si together with a multi-electrode or thin film resistor coating used as the control electrode between Si and PZT and metallic films as grounding between the interface of PZT ceramics. A linear voltage is applied to the bimorph PZT optics by probing the control electrodes from a two-channel controllable power supplier. In doing so, the optics surface can achieve a desired third-order-polynomial surface. Reducing hysteresis and creep in bimorph PZT X-ray optics is the only feasible way by inserting an appropriate capacitor in series with bimorph PZT optics to significantly reduce both effects.

  12. Colloidal processing of PMN-PT thick films for piezoelectric sensor applications

    Science.gov (United States)

    Luo, Hongyu

    65%Pb(Mg1/3Nb2/3)O3-35%PbTiO3 (65PMN-35PT, or PMN-PT) is a highly piezoelectric ceramic with superior piezoelectric coefficients over the more popular Pb(Zr0.5Ti0.5)O 3 (PZT). Because of its complex chemistry and high volatility of lead above 1000°C, the perovskite phase of PMN-PT is hard to process and has prevented PMN-PT from various piezoelectric applications, especially in the new area of piezoelectric micro-electro-mechanical systems (PMEMS) involving thick or thin piezoelectric films. In this thesis, a novel precursor suspension method is introduced that substantially lowers the sintering temperature of PMN-PT to 850°C from a PMN precursor powder made by coating Mg(OH) 2 on Nb2O5 particles. The precursor suspension method entails suspending PMN powders in PT precursor and uses the reaction sintering capability of PMN with nano-sized PT in the temperature range of 800°C˜1000°C. Moreover, free-standing PMN-PT thick films were obtained by tape casting the PMN-PT powder. This new geometry of PMN-PT shows giant electric-field enhanced piezoelectric responses comparable with those of single crystals. As an example of application, the PMN-PT thick film is bonded to a thinner layer of copper by electroplating and made into piezoelectric cantilever sensors. In conclusion, the colloidal suspension processing method produces free-standing PMN-PT thick films with ultrahigh piezoelectric properties.

  13. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  14. Film thickness in grease lubricated slow rotating rolling bearings

    NARCIS (Netherlands)

    Morales-Espejel, G.E.; Lugt, Pieter Martin; Pasaribu, H.R.; Cen, H.

    2014-01-01

    Film thickness measurements in grease lubricated contacts are presented for different greases. The conditions used in the experiments are similar to the ones expected in fully-flooded slow rotating bearings. The results show that at very low speeds grease produces film thicknesses substantially thic

  15. Thickness dependence of vortex critical velocity in wide Nb films

    Energy Technology Data Exchange (ETDEWEB)

    Grimaldi, Gaia [CNR-INFM Regional Laboratory SuperMat, Via S. Allende, Baronissi, SA, I-84081 (Italy)], E-mail: grimaldi@sa.infn.it; Leo, Antonio; Nigro, Angela; Pace, Sandro; Cirillo, Carla; Attanasio, Carmine [CNR-INFM Regional Laboratory SuperMat, Via S. Allende, Baronissi, SA, I-84081 (Italy); Dipartimento di Fisica ' E.R. Caianiello' , Universita di Salerno, Via S. Allende, Baronissi, SA, I-84081 (Italy)

    2008-04-01

    Pulsed I-V measurements performed on wide Nb films of different thickness show the electronic instability, at high driving currents, predicted by Larkin and Ovchinnikov (LO). We find that the associated vortex critical velocity v* decreases with the film thickness, and its temperature and magnetic field dependences exhibit some discrepancies with respect to the LO theoretical results.

  16. Impedance Based Characterization of a High-Coupled Screen Printed PZT Thick Film Unimorph Energy Harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, R.; Borregaard, L. M.

    2014-01-01

    . This approach leads to simple closed form expressions for peak power frequency, optimal load, and output power without a tedious mathematical derivative approach. The closed form expressions are validated against the exact numerical solution. The electromechanical model contains a set of only five lumped......The single degree of freedom mass-spring-damper system is the most common approach for deriving a full electromechanical model for the piezoelectric vibration energy harvester. In this paper, we revisit this standard electromechanical model by focusing on the impedance of the piezoelectric device...... parameters which, by means of the piezoelectric impedance expression, all can be determined accurately by electrical measurements. It is shown how four of five lumped parameters can be determined from a single impedance measurement scan, considerably reducing the characterization effort. The remaining...

  17. Alginate-magnesium aluminum silicate composite films: effect of film thickness on physical characteristics and permeability.

    Science.gov (United States)

    Pongjanyakul, Thaned; Puttipipatkhachorn, Satit

    2008-01-04

    The different film thicknesses of the sodium alginate-magnesium aluminum silicate (SA-MAS) microcomposite films were prepared by varying volumes of the composite dispersion for casting. Effect of film thickness on thermal behavior, solid-state crystallinity, mechanical properties, water uptake and erosion, and water vapor and drug permeability of the microcomposite films were investigated. The film thickness caused a small change in thermal behavior of the films when tested using DSC and TGA. The crystallinity of the thin films seemed to increase when compared with the thick films. The thin films gave higher tensile strength than the thick films, whereas % elongation of the films was on the contrary resulted in the lower Young's modulus of the films when the film thickness was increased. This was due to the weaker of the film bulk, suggesting that the microscopic matrix structure of the thick films was looser than that of the thin films. Consequently, water uptake and erosion, water vapor permeation and drug diffusion coefficient of the thick films were higher than those of the thin films. The different types of drug on permeability of the films also showed that a positive charge and large molecule of drug, propranolol HCl, had higher lag time and lower diffusion coefficient that acetaminophen, a non-electrolyte and small molecule. This was because of a higher affinity of positive charge drug on MAS in the films. The findings suggest that the evaporation rate of solvent in different volumes of the composite dispersion used in the preparation method could affect crystallinity and strength of the film surface and film bulk of the microcomposite films. This led to a change in water vapor and drug permeability of the films.

  18. Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

    Directory of Open Access Journals (Sweden)

    S. L. Bravina

    2011-01-01

    Full Text Available The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed by piezoresponse force microscopy. The comparison of the dependences of introduced asymmetry factors for the bipolar charge-voltage and current-voltage loops and unipolar current-voltage curves on drive voltage indicates the interconnection of ferroelectric and electrical space charge transfer asymmetries.

  19. Film-thickness Error Analysis of Optical Disk Systems

    Institute of Scientific and Technical Information of China (English)

    WANG Yang; GU Donghong; GAN Fuxi

    2001-01-01

    It is difficult to exactly control the film thickness of optical disk multilayer in the actual coating process. The thickness error becomes a main factor affecting the optical characters of the film system. The thickness error′s sensitivity factor of dielectric optical multilayer is derived from the optical matrix in this paper. The effect of the thickness error on the reflectivity or reflectivity contrast of the optical disk multilayer is analyzed with a numerical calculation. The sensitivities to thickness error for different layers or in different film-thickness ranges are compared and discussed. A sketchy method defining allowable thickness error is given. Some experimental results verify the applicability of our theoretical analysis.

  20. Electrical imprint effects on far infrared (FIR) transmittance spectrum in PZT ferroelectric films

    Science.gov (United States)

    Vivas C., H.

    2015-06-01

    Tunable transmittance response in the 0.1-25 THz range for a lead Zirconate Titanate Ferroelectric film under imprint effects and surface anisotropy is calculated by adapting the classical Landau Devonshire theory and Rouard's method. Induced electrical field is introduced by modulating the P - E polarization profile, while the dielectric permittivity frequency dependence enters into the formalism by taking into account the soft phonon mode E(TO1) contribution in the framework of the Drude-Lorentz model. It is found that two optical states of light transmittance emerge at zero applied field and normal incidence, and the intensities of transmitted light are closely correlated with the strength of imprint and the path of the electrical polarization.

  1. Thick antiwear films in elastohydrodynamic contacts. I. Film growth in rolling/sliding EHD contacts

    Energy Technology Data Exchange (ETDEWEB)

    Lacey, I.N.; Kelsall, G.H.; Spikes, H.A.; Macpherson, P.B.

    1986-07-01

    The formation and characteristics of thick films in elastohydrodynamic (EHD) contacts using pure phosphonate additives are described. Several alkyl and aryl group, pure phosphonate additives were added to rolling/sliding EHD contacts; the performance of the phosphonate additives is evaluated. It is observed that all phosphonates formed thick films from base oil solutions in rolling EHD contacts; the films have a thickness greater than a half a micron, withstand up to 10 percent sliding, and are formed in the presence of other additives. The effects of phosphonate group and temperature on the rate of film formation are investigated. The chemical properties of the viscous reaction product and the thick films formed by the phosphonates are analyzed. The reaction product and films consist of an iron-phosphate-monoester polymer with the phosphate acting as a bridge between iron(III) species. The use of the thick antiwear films to increase specific film thickness in EHD lubrication is discussed. 31 references.

  2. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  3. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

    Science.gov (United States)

    Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  4. Refractive index of nanoscale thickness films measured by Brewster refractometry

    CERN Document Server

    Tikhonov, E A; Malyukin, Yu V

    2015-01-01

    It is shown that reflective laser refractometery at Brewster angle can be usefull for precision measurements of refractive indexes (RI) in the transparency band of various films of nanoscale thickness. The RI measurements of nanoscale porous film on the basis of gadolinium orthosilicate and quartz have been carried out as first experience. It is shown that surface light scattering in such films that is connected with clustering of nanoscale pores can decrease the accuracy of the RI measurements at Brewster angle. Estimated physical dependence RI stipulated by the film thickness reduction (3D-2D transition) in the range of (20-160)nm has not been not detected.

  5. Liquid film thickness measurement by two-line TDLAS

    Science.gov (United States)

    Yang, Huinan; Chen, Jun; Cai, Xiaoshu; Greszik, Daniel; Dreier, Thomas; Schulz, Christof

    2014-04-01

    A fiber-based two-line tunable diode-laser absorption sensor with two near-infrared (NIR) distributed-feedback (DFB) diode lasers at ˜1.4 μm was used for non-intrusive time-resolved liquid water film thickness measurement. When probing the liquid film at two different wavelengths with significantly different absorption cross-sections, the additional signal losses due to surface fowling, reflection and beam steering can be eliminated. In this work, the evaporation process of a liquid film on transparent quartz plate was tracked and large fluctuations of film thickness were found at the end of the evaporation.

  6. Liquid film thickness measurement by two-line TDLAS

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Huinan [School of Energy and Power Engineering, University of Shanghai for Science and Technology, 200093, Shanghai, China and IVG, University of Duisburg-Essen, 47057, Duisburg (Germany); Chen, Jun; Cai, Xiaoshu [School of Energy and Power Engineering, University of Shanghai for Science and Technology, 200093, Shanghai (China); Greszik, Daniel; Dreier, Thomas; Schulz, Christof [IVG, University of Duisburg-Essen, 47057, Duisburg (Germany)

    2014-04-11

    A fiber-based two-line tunable diode-laser absorption sensor with two near-infrared (NIR) distributed-feedback (DFB) diode lasers at ∼1.4 μm was used for non-intrusive time-resolved liquid water film thickness measurement. When probing the liquid film at two different wavelengths with significantly different absorption cross-sections, the additional signal losses due to surface fowling, reflection and beam steering can be eliminated. In this work, the evaporation process of a liquid film on transparent quartz plate was tracked and large fluctuations of film thickness were found at the end of the evaporation.

  7. Self-assembled film thickness determination by focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Dejeu, J. [Institut UTINAM, UMR 6213 CNRS-UFC - equipe Materiaux et Surfaces Structures, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France)], E-mail: jerome.dejeu@univ-fcomte.fr; Salut, R. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Centrale MIMENTO, Universite de Franche-Comte, 32 avenue de l' Observatoire - 25044 Besancon Cedex (France); Spajer, M. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Centrale MIMENTO, Universite de Franche-Comte, 32 avenue de l' Observatoire - 25044 Besancon Cedex (France); Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Departement d' Optique, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France); Membrey, F.; Foissy, A. [Institut UTINAM, UMR 6213 CNRS-UFC - equipe Materiaux et Surfaces Structures, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France); Charraut, D. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Departement d' Optique, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France)

    2008-06-30

    The thickness evolution of multilayer film is investigated by focused ion beam (FIB) in the domain of polymer multilayers. This method, currently used in the modification and the characterization of integrated circuits, proves it is possible to determine the polymer film thickness. Sample cutting and its observation of the cross-section are performed in the FIB without leaving the vacuum chamber. Two main conclusions can be drawn: (1) the roughness of the film increases with the number of layer deposit, (2) the film growth changes from nonlinear (called exponential) to linear beyond 300 nm (70 layers)

  8. Development of solid state thick film zirconia oxygen gas sensors.

    OpenAIRE

    Ioannou, Andreas Stylianou

    1992-01-01

    Aspects relating to and including the development of thick film amperometric zirconia oxygen sensors were investigated. These devices, which were operated in the range 550-950°C, had a laminated structure in which a cathode, an electrolyte and an anode were printed, in that order, onto a planar alumina substrate. The anode and electrolyte were porous and during sensor Operation also acted as a diffusion barrier, restricting the rate of oxygen diffusion to the cathode. A thick film platinum he...

  9. Electrophoretic deposition and constrained sintering of strontium titanate thick films

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, Luís; Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt; Senos, Ana M.R.

    2015-01-15

    Thick films of functional oxides are currently substituting counterparts bulk ceramics, as in the case of low loss dielectrics. For SrTiO{sub 3} (ST) based compositions it is demonstrated that electrophoretic deposition (EPD), using acetone as a suspension media with iodine addition, is a suitable technology to fabricate 12 μm thick films. The microstructural analysis of the films sintered at 1500 °C shows that highly densified microstructures can be obtained and, by slightly varying the Sr/Ti stoichiometry in the powder composition, increased densification and grain size and enlargement of the distribution with decreasing Sr/Ti ratio can be observed. In spite of the high densification of the films, it is also demonstrated that due to the constraint imposed by the substrate a smaller grain size is observed in thick films as compared to equivalent bulk ceramics. In addition, a preferential vertical pore orientation is observed in ST thick films. These results may have broad implications if one considers that the dielectric losses and dielectric tunability is affected by pore orientation, since it affects the electric field distribution. - Highlights: • Nonstoichiometry effect on microstructure of constrained sintered thick films and bulk is similar. • Increased densification and grain size and enlargement of distribution with decreasing Sr/Ti ratio. • Independent of Sr/Ti ratio smaller grain size for thick films compared to ceramics. • Preferential vertical pore orientation for constrained sintering of thick films. • Anisotropic porosity as tailoring factor to engineer permittivity and tunability.

  10. Ferroelectric and Piezoelectric Properties of 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 Thick Films for Energy Harvesting Device Application

    Science.gov (United States)

    Jeong, Young Hun; Kim, Kyoung Bum; Lee, Young-Jin; Cho, Jeong-Ho; Kim, Byoung-Ik; Paik, Jong-Hoo; Nahm, Sahn

    2012-09-01

    The Ferroelectric and piezoelectric properties of 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of Pr = 20.6 µC/cm2, d33 = 370 pC/N, ɛT33/ɛ0 = 1185, and kp = 0.44. Moreover, its d33·g33, which can characterize high energy density material, is as large as approximately 13050×10-15 m2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

  11. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen;

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  12. Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness

    Science.gov (United States)

    Huang, Xinru; Roth, Connie B.

    2016-06-01

    Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ˜20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ˜120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

  13. Thickness of residual wetting film in liquid-liquid displacement

    Science.gov (United States)

    Beresnev, Igor; Gaul, William; Vigil, R. Dennis

    2011-08-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  14. Determination of hydration film thickness using atomic force microscopy

    Institute of Scientific and Technical Information of China (English)

    PENG Changsheng; SONG Shaoxian; GU Qingbao

    2005-01-01

    Dispersion of a solid particle in water may lead to the formation of hydration film on the particle surface, which can strongly increase the repulsive force between the particles and thus strongly affect the stability of dispersions. The hydration film thickness, which varies with the variation of property of suspension particles, is one of the most important parameters of hydration film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on force-distance curve of atomic force microscopy, for determining the hydration film thickness of particles is developed. The method utilizes the difference of cantilever deflection before, between and after penetrating the hydration films between tip and sample, which reflect the difference of slope on the force-distance curve. 3 samples, mica, glass and stainless steel, were used for hydration thickness determination, and the results show that the hydration film thickness between silicon tip and mica, glass and stainless steel are 30.0(2.0, 29.0(1.0 and 32.5(2.5 nm, respectively.

  15. Large electric-field control of perpendicular magnetic anisotropy in strained [Co/Ni] / PZT heterostructures

    Science.gov (United States)

    Gopman, Daniel; Dennis, Cindi; Chen, P. J.; Iunin, Yury; Shull, Robert

    We present a piezoelectric/ferromagnetic heterostructure with PMA - a Co/Ni multilayer sputtered directly onto a Pb(Zr,Ti)O3 (PZT) substrate. Chemical-mechanical polishing was used to reduce the roughness of PZT plates to below 2 nm rms, enabling optimal magnetoelectric coupling via the direct interface between PZT and sputtered Co/Ni films with large PMA (Keff = (95 +/-9 kJ/m3)) . We grew the following layer stack: Ta(3)/Pt(2)/[Co(0.15)/Ni(0.6)]x4/Co(0.15)/Pt(2)/Ta(3); numbers in parentheses indicate thicknesses in nm. Applied electric fields up to +/- 2 MV/m to the PZT generated 0.05% in-plane compression in the Co/Ni multilayer, enabling a large electric-field reduction of the PMA (ΔKeff >= 103 J/m3) and of the coercive field (35%). Our results demonstrate that: (i) heterostructures combining PZT and [Co/Ni] exhibit larger PMA (Keff ~105 J/m3) than previous magnetoelectric heterostructures based on Co/Pt and CoFeB, enabling thermally stable hybrid magnetoelectric/spintronic devices only tens of nm in diameter and (ii) electric-field control of the PMA is promising for more energy efficient switching of spintronic devices.

  16. The jet impact force of laser-induced bubble under the water-film with different thickness

    Science.gov (United States)

    Li, Beibei; Wang, Bingyang; Liu, Xiumei; He, Jie; Lu, Jian

    2015-05-01

    The effect of water-film on the laser-induced bubble was investigated by a piezoelectric ceramic transducer (PZT) sensor. Both of the collapse time and liquid-jet impact force of the bubble under the water-film were obtained, and the experiments were also completed in different laser energy. The collapse time increase with the thickness of the waterfilm, but the liquid-jet impact force decrease. We consider that the collapse time was affected by both of the rigid boundary and surface, and the increasing of the collapse time is the reason the decreasing of the liquid-jet impact force. The velocity of bubble wall is lower with the longer collapse time for the uniform bubbles energy, so the liquid-jet impact force is lower. For the other reasons, more laser energy would be absorbed by the thicker water-film, but the water was also splashed for the thinner water-film. So, for the thinner water-film, the bubble energy is higher, the liquidjet impact force is higher, but the maximal radius is smaller because of the splash process. In the other hand, both of the collapse time and the liquid-jet impact force are increase with the laser energy. These researches are useful for the laser processing under water.

  17. Thick-film materials for silicon photovoltaic cell manufacture

    Science.gov (United States)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  18. Grain size and film thickness effect on the thermal expansion coefficient of FCC metallic thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-08-01

    Thin films are used in wide range of applications in industry, such as solar cells and LEDs. When thin films are deposited on substrates, various stresses are generated due to the mechanical difference between the film and substrate. These stresses can cause defects, such as cracking and buckling. Therefore, knowledge of the mechanical properties is important for improving their reliability and stability. In this study, the thermal expansion coefficient of FCC metallic thin films, such as Ag and Cu, which have different grain sizes and thicknesses, were calculated using the thermal cycling method. As a result, thermal expansion coefficient increased with increasing grain size. However, the film thickness had no remarkable effect.

  19. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  20. Fabrication of BIT thick films patterned by proton beam writing

    Science.gov (United States)

    Yamaguchi, Masaki; Watanabe, Kazuki; Nishikawa, Hiroyuki; Masuda, Yoichiro

    2017-07-01

    In this study, we fabricated thick films with polyvinylpyrrolidone (PVP) added to bismuth titanate (Bi4Ti3O12) to form a lead-free ferroelectric material. We examined the direct patterning of these materials by using proton-beam irradiation. When 50% PVP was added to the organic source solution, the c-axis orientation was promoted and cracks were suppressed due to stress relaxation. In addition, a dot and an arbitrary-shape micro-pattern were formed on bismuth-titanate thick film by micromachining using a proton beam.

  1. Electroplated thick-film cobalt platinum permanent magnets

    Science.gov (United States)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-10-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L10 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25-200 mA/cm2), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L10 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (Br ~0.8 T, Hci ~800 kA/m, squareness close to 0.9, and BHmax of 100 kJ/m3) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm2, pH of 7, and subsequently annealed at 675 °C for 30 min.

  2. The thickness dependence of dielectric permittivity in thin films

    Science.gov (United States)

    Starkov, Ivan A.; Starkov, Alexander S.

    2016-08-01

    It is well known that the physical properties of thin films depend on their thickness. For a description of such dependences, it is proposed to use a classical model taking into account the presence of film interfaces. A dielectric ball near the half-space was chosen to adopt the approach. The dependence of the effective permittivity of the ball on geometrical and physical parameters of the system is analyzed. It is demonstrated that the dielectric constant of a film can be presented as a sum of the constant of a bulk material and the interface term.

  3. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  4. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund;

    2007-01-01

    The development towards smaller devices with more functions integrated calls for new and improved manufacturing processes. The screen-printing process is quite well suited for miniaturised and integrated devices, since thick films can be produced in this manner without the need for further machin...

  5. Polymer thick-film sensors: possibilities for smartcard biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, P.H.

    2002-01-01

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been invest

  6. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  7. Fabrication, characterization and applications of PZT and ITO nanostructures

    Science.gov (United States)

    Xu, Shiyou

    Lead Zirconate Titanate (PbZr1--xTixO 3, PZT) is one of the most important piezoelectric materials, which has been used traditionally as sensors and actuators. One dimensional (1-D) PZT is expected to have great potentials as building blocks for micro and nano sensors and actuators, nano active fiber composites and integrated nanosystems. The objective of this research is to investigate the size effect on mechanical and piezoelectric properties through the fabrication and characterization of 1-D PZT nanostructures such as PZT nanofibers and nanotubes. The electrospinning process and template-assisted method were used to synthesize PZT nanofibers and nanotubes, respectively. Various novel experimental methods, such as atomic force microscopy (AFM) and nanomanipulator, were used to characterize the mechanical and piezoelectric properties of PZT nanostructures. The obtained results have shown that the piezoelectric and mechanical properties of PZT are size dependent. A single PZT nanofiber presented a lower young's modulus (42.99 GPa measured from AFM-base method and 46.6 GPa from vibration-based method, respectively) than that of PZT thin films and bulks. The PZT nanofibers with diameters smaller than 150 nm still demonstrated a strong electromechanical coupling effect. The piezoelectric constant (d 33) of PZT nanofibers increased from 574.1 pm/V to 860.5 pm/V when their diameters decreased from 112 nm to 50 nm. PZT nanotubes were found to have a d33 value of up to 595 pm/V. These values are significantly higher than that of PZT thin films and comparable to that of PZT bulks. The PZT nanofibers and nanotubes developed in this research not only provide new types of sensing and actuation mechanisms for various novel nanodevices, but also provide significantly improved performance compared with their thin film counterpart used in microelectromechanical systems (MEMS). 1-D ITO nanostructures (nanofibers and nanotubes) were synthesized and characterized for potential use

  8. Effect of Film Thickness on Properties of a-Si∶H Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The a-Si∶H films with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.

  9. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  10. Influence of substrate and film thickness on polymer LIPSS formation

    Science.gov (United States)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A.; Rebollar, Esther

    2017-02-01

    Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200-380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  11. Dielectric enhancement of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Yasong; Chen, Xiaoyang; Habibul, Arzigul; Zhang, Danyang; Yu, Ping [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China)

    2016-08-15

    Multilayer thick films (∝4 μm) with compositional PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO{sub 3} seeding layers. The effects of LaNiO{sub 3} layers on microstructure and electrical properties of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} thick films were investigated in detail. The results show that both PZT and PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film were pure perovskite crystalline phase. The PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} film texture was dense and well adhered on the LaNiO{sub 3} layer. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ε{sub r} ∝2450 (10 kHz) and tanδ ∝0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, α ∝51.1408 cm kV{sup -1} (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain-wall-defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Anisotropic resistivity in plasma-sprayed silicon thick films

    Science.gov (United States)

    Kharas, Boris Dave; Sampath, Sanjay; Gambino, Richard J.

    2005-05-01

    Silicon thick films deposited by thermal plasma spray are of interest as inexpensive electronic materials for conformal meso-scale electronics applications. In addition they also serve as a model system for the investigation of electrical properties of coatings with layered anisotropy. In this study impedance spectroscopy was used to measure the complex resistivity of free-standing 64μm-thick polycrystalline silicon films deposited by thermal plasma spraying in an atmospheric ambient. Impedance spectroscopy measurements were taken in the through-thickness (across-splat) and edge-to-edge (in-splat) directions and revealed a resistivity difference of approximately 7.5±0.23 between the two directions. The complex resistivity results are explained on the basis of a brick-layer type model, associated with the layered splat microstructure obtained from cross-sectional transmission electron microscope imaging of the films. In addition a circuit-based model made up of parallel, resistor-capacitor elements in series, and Cole-Cole and Davidson-Cole impedance functions were used to fit the impedance data to extract material parameters and contributions from the grains and splat boundaries. Furthermore, thermal processing and phosphorus doping is shown to lead to higher and lower resistivity, respectively, in the films.

  13. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    Güvenç Akgül

    2014-02-01

    Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth () in titanium, an important parameter for surface applications, was determined to be = 2.6 ± 0.1 nm using 2,3 resonance intensity variation as a function of film thickness. The average 3/2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 3 and 2 peaks and 0.66 from the integrated area under each 3 and 2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

  14. Influence of binding material of PZT coating on microresonator's electrical and mechanical properties

    Science.gov (United States)

    Janusas, Giedrius; Guobiene, Asta; Palevicius, Arvydas; Brunius, Alfredas; Cekas, Elingas; Baltrusaitis, Valentinas; Sakalys, Rokas

    2017-06-01

    Microresonators are fundamental components integrated in hosts of MEMS applications: covering the automotive sector, the telecommunication industry, electronic equipment for surface/material characterization and motion sensing, and etc. The aim of this paper is to investigate the mechanical and electrical properties of PZT film fabricated with three binding materials: polyvinyl butyral (PVB), polymethyl methacrylate (PMMA) and polystyrene (PS) and to evaluate applicability in control of microresonators Q factor. Micro particles of PZT powder were mixed with 20% solution of PVB, PMMA and PS in benzyl alcohol. For investigation of mechanical and electrical properties multilayer cantilevers were made. Obtained PZT and polymer paste was screen printed on copper (thickness 40 μm) using polyester monofilament screen meshes (layer thickness 50 μm) and dried for 30 min at 100°C. Electric dipoles of the PZT particles in composite material were aligned using high voltage generator (5 kV) and a custom-made holder. Electric field was held for 30 min. Surfaces of the applied films were investigated by Atomic Force Microscope NanoWizard(R)3 NanoScience. Dynamic and electrical characteristics of the multilayer were investigated using laser triangular displacement sensor LK-G3000. The measured vibration amplitude and generated electrical potential was collected with USB oscilloscope PicoScope 3424. As the results showed, these cantilevers were able to transform mechanical strain energy into electric potential and, v.v. However, roughness of PZT coatings with PMMA and PS were higher, what could be the reason of the worse quality of the top electrode. However, the main advantage of the created composite piezoelectric material is the possibility to apply it on any uniform or non-uniform vibrating surface and to transform low frequency vibrations into electricity.

  15. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  16. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  17. Discrete component bonding and thick film materials study

    Science.gov (United States)

    Kinser, D. L.

    1975-01-01

    The results are summarized of an investigation of discrete component bonding reliability and a fundamental study of new thick film resistor materials. The component bonding study examined several types of solder bonded components with some processing variable studies to determine their influence upon bonding reliability. The bonding reliability was assessed using the thermal cycle: 15 minutes at room temperature, 15 minutes at +125 C 15 minutes at room temperature, and 15 minutes at -55 C. The thick film resistor materials examined were of the transition metal oxide-phosphate glass family with several elemental metal additions of the same transition metal. These studies were conducted by preparing a paste of the subject composition, printing, drying, and firing using both air and reducing atmospheres. The resulting resistors were examined for adherence, resistance, thermal coefficient of resistance, and voltage coefficient of resistance.

  18. All-thin-film PZT/FeGa Multiferroic Cantilevers and Their Applications in Switching Devices and Parametric Amplification

    Science.gov (United States)

    Wang, Yi; Onuta, Tiberiu-Dan; Long, Chris; Lofland, Samuel; Takeuchi, Ichiro

    2014-03-01

    We are investigating the characteristics of microfabricated PZT/FeGa multiferroic cantilevers. The cantilevers can be driven by AC or DC magnetic and electric field, and the device response can be read off as a piezo-induced voltage. We can use the multiple input parameters to operate the devices in a variety of manners for different applications. They include electromagnetic energy harvesting, pulse triggered nonlinear memory devices, and parametrically amplified ME sensors. Due to the competition of anisotropy and Zeeman energies, the mechanical resonant frequency of the cantilevers was found to follow a hysteresis behavior with DC bias magnetic field applied in the cantilever easy axis. We can also control and tune the occurrence of nonlinear bifurcation in the frequency spectrum. The resulting hysteresis in the frequency spectrum can be used to make switching devices, where the input can be DC electric and magnetic fields, as well as pulses of AC fields. We have also demonstrated parametric pumping of the response from an AC magnetic field using frequency-doubled AC electric field. The enhanced equivalent ME coefficient is as high as 10 million V/(cm*Oe), when the pumping voltage is very close to a threshold voltage. The quality factor also increases from 2000 to 80000 with pumping.

  19. Energy harvesting from vertically aligned PZT nanowire arrays

    Science.gov (United States)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  20. A sensitive magnetic field sensor using BPSCCO thick film

    Indian Academy of Sciences (India)

    S Vijay Srinivas; Abhijit Ray; T K Dey

    2001-08-01

    A highly sensitive magnetic sensor operating at liquid nitrogen temperature and based on BPSCCO screen-printed thick film, is reported. The sensor resistance for an applied magnetic field of 100 × 10–4T(100 gauss) exhibits an increase by 360% of its value in zero field at 77.4 K. The performance of the sensor in presence of magnetic field, the hysteretic features and the effect of thermal cycling, has been discussed.

  1. High-performance PMN-PT thick films.

    Science.gov (United States)

    Kosec, Marija; Ursic, Hana; Holc, Janez; Hrovat, Marko; Kuscer, Danjela; Malic, Barbara

    2010-10-01

    This article describes some of our work on ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃ (0.65PMN-0.35PT) thick films printed on alumina substrates. These thick films, with the nominal composition ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃, were produced by screen-printing and firing a paste prepared from an organic vehicle and pre-reacted fine particles of avery chemically homogeneous powder. To improve the adhesion of the 0.65PMN-0.35PT to the platinized alumina substrate,a Pb(Zr₀.₅₃Ti₀.₄₇)O₃ layer was deposited between the electrode and the substrate. The samples were then sintered at 950 °C for 2 h with various amounts of packing powder on the alumina (Al₂O₃) substrates. The sintering procedure was optimized to obtain dense 0.65PMN-0.35PT films. The films were then characterized using scanning electron microscopy as well as measurements of the dielectric and piezoelectric constants.The electrostrictive behavior of the 0.65PMN-0.35PT thick films was investigated using an atomic force microscope(AFM). Finally, substrate-free, large-displacement bending type actuators were prepared and characterized, and the normalized displacement (i.e., the displacement per unit length) of the actuators was determined to be 55 μm/cm at 3.6 kV/cm.

  2. The Effect of Thickness of Aluminium Films on Optical Reflectance

    Directory of Open Access Journals (Sweden)

    Robert Lugolole

    2015-01-01

    Full Text Available In Uganda and Africa at large, up to 90% of the total energy used for food preparation and water pasteurization is from fossil fuels particularly firewood and kerosene which pollute the environment, yet there is abundant solar energy throughout the year, which could also be used. Uganda is abundantly rich in clay minerals such as ball clay, kaolin, feldspar, and quartz from which ceramic substrates were developed. Aluminium films of different thicknesses were deposited on different substrates in the diffusion pump microprocessor vacuum coater (Edwards AUTO 306. The optical reflectance of the aluminium films was obtained using a spectrophotometer (SolidSpec-3700/DUV-UV-VIS-NIR at various wave lengths. The analysis of the results of the study revealed that the optical reflectance of the aluminium films was above 50% and increased with increasing film thickness and wavelength. Thus, this method can be used to produce reflector systems in the technology of solar cooking and other appliances which use solar energy.

  3. Tape casting and partial melting of Bi-2212 thick films

    Energy Technology Data Exchange (ETDEWEB)

    Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

    1994-12-31

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

  4. Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

    Science.gov (United States)

    Sun, Yan; Shull, Kenneth; Wang, Jin

    2010-03-01

    The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

  5. An Investigation of the Relationship between Resistance and Thickness of Deposited Nickel Thin Film Resistors

    Directory of Open Access Journals (Sweden)

    Ericam R.R. Mucunguzi-Rugwebe

    2013-09-01

    Full Text Available The main purpose of this study is finding the relationship between resistance and thickness of deposited Nickel Thin Film Resistors. It was found that the Sheet Resistance, Rs, is inversely proportional to the thickness of the film on the substrate. It was also observed that when the film thickness is greater than 50 nm, films behave like ordinary resistors. In other words in bulk, films obey Ohm’s law if other physical quantities remain constant.

  6. Effect of film thickness on the columnar packing structures of discotic supramolecules in thin films.

    Science.gov (United States)

    Kim, Hyo-Sik; Choi, Sung-Min; Pate, Brian D; Park, Po Gyu

    2009-10-19

    The effects of film thickness on the columnar packing structure of discotic supramolecules in a thin supported film have been investigated by grazing-incidence small-angle X-ray scattering technique using magnetically aligned cobalt octa(n-decylthio)porphyrazine (CoS10) films on octadecyltrichlorosilane (OTS)-functionalized substrates as model systems. Magnetically aligned CoS10 films with a range of film thicknesses (49-845 nm) form uniaxially oriented 'edge-on' columnar superstructures with their columnar directors perpendicular to the applied magnetic field. However, the orientational ordering of the columnar packing in the plane perpendicular to the applied magnetic field is strongly dependent on the film thickness. While being damped by the elasticity of the side chains of CoS10, the strong interfacial interaction at the film-substrate interface propagates up to 50-100 nm from the substrate, maintaining the orientation of columnar packing in the plane perpendicular to the applied magnetic field. When the distance from the film-substrate interface becomes larger than about 100 nm, symmetric tilting of columnar layer orientation, which saturates at 11.5 degrees , occurs due to longitudinal edge dislocations induced by accumulated elastic deformation.

  7. Film thickness of mechanically worked lubricating grease at very low speeds

    NARCIS (Netherlands)

    Cen, H.; Lugt, Pieter Martin; Morales-Espejel, G.E.

    2014-01-01

    Several different types of commercially available greases, aged in a roll stability tester, have been tested in a ball-on-disc machine where the film thickness was measured using the interferometry method. The grease film thickness at very low speed is thicker than the base oil film thickness due to

  8. An In Situ Electric Field Study of Magnetoelectric Coupling in PZT-LSMO Thin Film Heterostructures Using Polarized Neutron Reflectometry and Transmission Electron Microscopy

    Science.gov (United States)

    Spurgeon, Steven; Sloppy, Jennifer; Huang, Esther; Vasudevan, Rama; Lofland, Samuel; Lauter, Valeria; Valanoor, Nagarajan; Taheri, Mitra

    2013-03-01

    The development of ``spintronics'' devices based on charge and spin transport has signaled a paradigm shift in the design of data storage and computing technologies. Magnetoelectric materials, which exhibit intrinsic coupling between electronic and magnetic order, are ideal for these applications. Unfortunately, single-phase magnetoelectrics are exceedingly rare in nature and attention has turned to composite heterostructures that display coupled functionalities at interfaces. A promising system in which to explore this coupling is a thin film oxide heterostructure of the piezoelectric Pb(Zr0.2Ti0.8)O3 (PZT) and the half-metal La0.7Sr0.3MnO3 (LSMO). We show that it is possible to construct a capacitor-type device structure from these materials that may form the basis for an electrically-switched magnetic memory. We conduct polarized neutron reflectometry (PNR) measurements and measure changes in the magnetization depth profile throughout the composite under the reversal of an in situ electric field. We then correlate these PNR results to local strain and chemistry using transmission electron microscopy (TEM). We find that a combination of charge doping and strain mechanisms governs coupling in this system.

  9. Influence of films thickness and structure on the photo-response of ZnO films

    Science.gov (United States)

    Ali Yıldırım, M.; Ateş, Aytunç

    2010-04-01

    ZnO thin films were grown using Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Annealing temperatures and film thickness effect on the structural, morphological, optical and electrical properties of the films were studied. For this as-deposited films were annealed at 200, 300, 400 and 500 °C for 30 min in oxygen atmosphere. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that the films are covered well with glass substrates and have good polycrystalline structure and crystalline levels. The film thickness effect on band gap values was investigated and band gap values were found to be within the range of 3.49-3.19 eV. The annealing temperature and light effect on electrical properties of the films were investigated and it was found that the current increased with increasing light intensity. The resistivity values were found as 10 5 Ω-cm for as-deposited films from electrical measurements. The resistivity decreased decuple with annealing temperature and decreased centuple with light emission for annealed films.

  10. Optimized Performances of Thick Film Organic Lighting-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    WANG Xiu-Ru; ZHANG Zhi-Qiang; MA Dong-Ge; SUN Run-Guang

    2008-01-01

    @@ The performance of organic light-emitting diodes (OLEDs) with thick film is optimized.The alternative vana-dium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline alu-minium (Alq3) is used to enhance electrons is the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52 nm)/Alq3 (30 and 45 nm)/Alq3:Bphen (30wt%, 30 and 45 nm)/LiF (1 nm)/Al (120nm) devices are fabricated.The thick-film devices show the turn-on voltage of about 3 V and the maximal power efficiency of 4.51m/W, which is 1.46 times higher than the conventional thin-film OLEDs.

  11. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

    Institute of Scientific and Technical Information of China (English)

    SUN Jian; BAI Yi-Zhen; YANG Tian-Peng; XU Yi-Bin; WANG Xin-Sheng; DU Guo-Tong; WU Han-Hua

    2006-01-01

    @@ For ZnO/diamond structured surface acoustic wave (SAW) filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition (MOCVD). The properties of the ZnO films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

  12. Effect of film thickness on the phase behaviors of diblock copolymer thin film.

    Science.gov (United States)

    Jung, Jueun; Park, Hae-Woong; Lee, Sekyung; Lee, Hyojoon; Chang, Taihyun; Matsunaga, Kazuyuki; Jinnai, Hiroshi

    2010-06-22

    A phase diagram was constructed for a polystyrene-block-polyisoprene (PS-b-PI, M(W) = 32 700, f(PI) = 0.670) in thin films on Si wafer as a function of film thickness over the range of 150-2410 nm (7-107L(0) (L(0): domain spacing)). The PS-b-PI exhibits a variety of ordered phases from hexagonally perforated lamellar (HPL) via double gyroid (DG) to hexagonally packed cylinder (HEX) before going to the disordered (DIS) phase upon heating. The morphology of the PS-b-PI in thin film was investigated by grazing incidence small-angle X-ray scattering, transmission electron microscopy, and transmission electron microtomography. In thin film, the phase transition temperature is difficult to be determined unequivocally with in situ heating processes since the phase transition is slow and two phases coexist over a wide temperature range. Therefore, in an effort to find an "equilibrium" phase, we determined the long-term stable phase formed after cooling the film from the DIS phase to a target temperature and annealing for 24 h at the temperature. The temperature windows of stable ordered phases are strongly influenced by the film thickness. As the film thickness decreases, the temperature window of layer-like structures such as HPL and HEX becomes wider, whereas that of the DG stable region decreases. For the films thinner than 160 nm (8L(0)), only the HPL phase was found. In the films exhibiting DG phase, a perforated layer structure at the free surface was found, which gradually converts to the internal DG structure. The relief of interfacial tension by preferential wetting appears to play an important role in controlling the morphology in very thin films.

  13. Thickness Dependence of Magnetic Properties in DyFeCo Films

    Institute of Scientific and Technical Information of China (English)

    Xiong Rui; Liu Hai-lin; Mei Xue-fei; Li Zuo-yi; Yang Xiao-fei; Shi Jing

    2004-01-01

    Films of amorphous DyFeCo were deposited on glass substrates using RF sputtering deposition system. The thickness dependence of the coercivity of DyFeCo films prepared under the same sputtering conditions was investigated. It is found that the composition is nearly thickness independent, while the coercivity is shown to increase with the film thickness increasing at the beginning, then above a certain thickness decrease with the thickness increasing. The thickness dependence of the coercivity is believed to be due to microstructure-induced variations in the short-range order during the film growth.

  14. Effect of solid content variations on PZT slip for tape casting

    Directory of Open Access Journals (Sweden)

    Gang Jian

    2012-12-01

    Full Text Available Lead zirconate titanate (PZT particles with pure tetragonal structure were synthesized by solid-state reaction method and used for preparation of slurries with different solid contents (34–80 wt.%. Then, PZT thick films were fabricated by the nonaqueous tape casting method. It was shown that the slurry prepared from ball-milled particles exhibited better rheology properties than slurry from particles which were not ball-milled. Measurement of sedimentation volumes and zeta potentials indicated particle aggregation, resulting in weak stability of the slurries with high solid contents. The microstructure, piezoelectric and ferroelectric properties of PZT sintered films were investigated in terms of solid contents. Ceramic films prepared from the slurry with solid contents of 73 wt.% had the optimal structure and properties. After poling at 200 °C with an applied field of 1.2 kV/cm, a d33 of 294 pC/N was achieved; typical ferroelectric properties were also observed with a Ps of 38 μC/cm2.

  15. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    Science.gov (United States)

    Prathap, P.; Revathi, N.; Venkata Subbaiah, Y. P.; Ramakrishna Reddy, K. T.

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity.

  16. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  17. Thick film magnetic nanoparticulate composites and method of manufacture thereof

    Science.gov (United States)

    Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Ge, Shihui (Inventor); Zhang, Zongtao (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor)

    2009-01-01

    Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

  18. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  19. Laser sintering of thick-film conductors for microelectronic applications

    Science.gov (United States)

    Kinzel, Edward C.; Sigmarsson, Hjalti H.; Xu, Xianfan; Chappell, William J.

    2007-03-01

    This paper investigates fabrication of functional thick metal films using simultaneous laser sintering and patterning along with the fundamental physical phenomena that govern the laser sintering process. The effects of the processing parameters on the quality of the fabricated components are investigated through a heat transfer analysis. We show that our process has potentials for metallization of microelectronics directly onto substrates whose melting temperatures are much lower than the temperature needed for sintering, which is only possible by properly controlling the temperature field during laser sintering. Optimum properties of the fabricated components are obtained when certain thermal conditions are produced during laser heating.

  20. Effect of film thickness on magnetic properties of Cr/SmCo/Cr films

    Institute of Scientific and Technical Information of China (English)

    LI Ning; LI Baohe; FENG Chun; LI Minghua; YU Guanghua

    2012-01-01

    Cr/SmCo/Cr films with different SmCo thickness were deposited on glass substrates by magnetron sputtering,followed by an annealing process at 550℃for 20 min.Experimental results showed that the SmCo fihn of 30 nm exhibited two-phase behavior in the demagnetization process,the obvious kink was observed near zero.For the SmCo film of 50 nm,the kink was invisible,and a single phase like behavior was obtained in the demagnetization process.The reversal behavior became consistent in the thicker films.Moreover,the coercivity reduced and the saturated magnetization increased obviously with the increasing thickness.X-ray diffraction results indicated that the average grain size of SmCo5 in the thicker films were almost 30 nm,but the quantity of SmCo5 grains increased with the increasing thickness,which enhanced the intergrain exchange coupling (IEC) of the SmCo5 hard phases.The increase of lEC improved the magnetic properties of SmCo films with increasing thickness.

  1. Performance of magnetoelectric PZT/Ni multiferroic system for energy harvesting application

    Science.gov (United States)

    Gupta, Reema; Tomar, Monika; Kumar, Ashok; Gupta, Vinay

    2017-03-01

    Magnetoelectric (ME) coefficient of Lead Zirconium Titanate (PZT) thin films has been probed for possible energy harvesting applications. Single phase PZT thin films have been deposited on nickel substrate (PZT/Ni) using pulsed laser deposition (PLD) technique. The effect of PLD process parameters on the ME coupling coefficient in the prepared systems has been investigated. The as grown PZT films on Ni substrate were found to be polycrystalline with improved ferroelectric and ferromagnetic properties. The electrical switching behavior of the PZT thin films were verified using capacitance voltage measurements, where well defined butterfly loops were obtained. The ME coupling coefficient was estimated to be in the range of 94.5 V cm‑1 Oe‑1–130.5 V cm‑1 Oe‑1 for PZT/Ni system, which is large enough for harnessing electromagnetic energy for subsequent applications.

  2. Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Zhao Yan-Min; Liu Xing-Jiang; Ao Jian-Ping; Sun Yun

    2011-01-01

    Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.

  3. Nitrogen dioxide sensing properties of sprayed tungsten oxide thin film sensor: Effect of film thickness.

    Science.gov (United States)

    Ganbavle, V V; Mohite, S V; Agawane, G L; Kim, J H; Rajpure, K Y

    2015-08-01

    We report a study on effect of film thickness on NO2 sensing properties of sprayed WO3 thin films. WO3 thin films varying in thicknesses are deposited onto the glass substrates by simple spray pyrolysis technique by varying the volume of spray solution.Thin film gas sensors are characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) techniques to study their physical properties. Film having thickness 745nm has shown highest gas response of 97% with 12 and 412s response and recovery times, respectively towards 100ppm NO2 concentration. Gas response of 20% is observed towards 10ppm NO2 at 200°C operating temperature. Sensitivity of the optimal sensor is 0.83%/ppm when operating at 200°C with 10ppm lower detection limit. The response of the sensor is reproducible and WO3 films are highly selective towards NO2 in presence of mist of various interfering gases viz. H2S, NH3, LPG, CO and SO2.

  4. Environmentally compatible solder materials for thick film hybrid assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Vianco, P.T.; Rejent, J.A.; Hernandez, C.L. [Sandia National Labs., Albuquerque, NM (United States). Materials and Process Sciences Center

    1997-02-01

    New soldering materials and processes have been developed over the last several years to address a variety of environmental issues. One of the primary efforts by the electronics industry has involved the development of alternative solders to replace the traditional lead-containing alloys. Sandia National Laboratories is developing such alternative solder materials for printed circuit board and hybrid microcircuit (HMC) applications. This paper describes the work associated with low residue, lead-free soldering of thick film HMC`s. The response of the different materials to wetting, aging, and mechanical test conditions was investigated. Hybrid test vehicles were designed and fabricated with a variety of chip capacitors and leadless ceramic chip carriers to conduct thermal, electrical continuity, and mechanical evaluations of prototype joints. Microstructural development along the solder and thick film interface, after isothermal solid state aging over a range of elevated temperatures and times, was quantified using microanalytical techniques. Flux residues on soldered samples were stressed (temperature-humidity aged) to identify potential corrosion problems. Mechanical tests also supported the development of a solder joint lifetime prediction model. Progress of this effort is summarized.

  5. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    R S Khadayate; R B Waghulde; M G Wankhede; J V Sali; P P Patil

    2007-04-01

    This paper presents ethanol vapour sensing properties of WO3 thick films. In this work, the WO3 thick films were prepared by standard screen-printing method. These films were characterized by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM). The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery time.

  6. Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

    Science.gov (United States)

    Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

    2016-05-01

    Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

  7. Effect of preheating on the film thickness of contemporary composite restorative materials

    Directory of Open Access Journals (Sweden)

    Dimitrios Dionysopoulos

    2014-12-01

    Conclusion: The film thickness of the composites tested is material dependent. The thickness of the preheated conventional composites is significantly lower than those at room temperature. The conventional composites provide film thickness values greater than those of the flowable composites regardless of preheating temperature.

  8. Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P. [CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Craciun, F. [CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Dinescu, M. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)]. E-mail: dinescum@ifin.nipne.ro; Scarisoreanu, N. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Moldovan, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Purice, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Galassi, C. [CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

    2005-04-25

    Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers.

  9. Film thickness dependent ordering dynamics of lamellar forming diblock copolymer thin films.

    Science.gov (United States)

    Peters, Robert D; Dalnoki-Veress, Kari

    2012-12-01

    Ellipsometry is used in a novel way to study the ordering dynamics of symmetric poly(styrene-methyl methacrylate) diblock copolymer thin films. Ordered thin films form lamellae parallel to the substrate which can form islands or holes at the free surface to ensure commensurability of the layers. The sensitivity of ellipsometry provides the unique ability to probe morphological changes during the ordering process before the ultimate formation of islands or holes at the free surface. We observe three distinct stages in the ordering process: i) an ordering into an intermediate state, ii) an incubation time where the film structure remains constant and iii) the nucleation of islands or holes to achieve equilibrium lamellar morphology. The time-resolved measurement of an incubation period and initial ordering stage provides a means for studying the effect of thickness on the ordering kinetics. The dependence of incubation time on the commensurability of the initial film height is explained using strong segregation theory.

  10. Temperature- and thickness-dependent elastic moduli of polymer thin films.

    Science.gov (United States)

    Ao, Zhimin; Li, Sean

    2011-03-22

    The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T) and thickness (h)-dependent elastic moduli of polymer thin films Ef(T,h) is developed with verification by the reported experimental data on polystyrene (PS) thin films. For the PS thin films on a passivated substrate, Ef(T,h) decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*), at which thickness Ef(T,h) deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  11. Electrical excitation and optical detection of ultrasounds in PZT based piezoelectric transducers

    Energy Technology Data Exchange (ETDEWEB)

    Babilotte, P; Diallo, O; Hue, L-P Tran Hu; Feuillard, G [University Francois Rabelais de Tours, Laboratory Imaging and Brain, Team Ultrasonic Characterisation and Piezoelectricity, ENIVL, Rue de la Chocolaterie, 41034 BLOIS CEDEX (France); Kosec, M; Kuscer, D, E-mail: philippe.babilotte@univ-tours.fr [Josef Stefan Institute, Jamova cesta 39, 1000 LJUBLJANA (Slovenia)

    2011-01-01

    The displacement response of piezoelectric PZT thick films fabricated by means of electrophoretic deposition and laid down an alumina substrate is investigated using coherent optical detection. According to thickness properties determined by electrical impedance measurements, the film presents a resonance around 40 MHz. Other resonance peaks are observed that correspond to eigen modes of the film substrate couple structure. Uniformity of the response of the integrated structure is studied across the surface of the sample when excited by either a continuous or impulse electrical voltage. Results on the amplitude of the detected signal versus the frequency and the input excitation voltage are reported. The optical detection used in these experiments is complementary to conventional techniques of characterization of piezoelectric devices such as electrical impedance measurements and allows getting information on the displacement response of the device.

  12. Overlay mark optimization for thick-film resist overlay metrology

    Institute of Scientific and Technical Information of China (English)

    Zhu Liang; Li Jie; Zhou Congshu; Gu Yili; Yang Huayue

    2009-01-01

    For thick resist implant layers, such as a high voltage P well and a deep N well, systematic and uncorrectable overlay residues brought about by the tapered resist profiles were found. It was found that the tapered profile is closely related to the pattern density. Potential solutions of the manufacturing problem include hardening the film solidness or balancing the exposure density. In this paper, instead of focusing on the process change methodology,we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark design. Based on the comparison of the overlay performances between the proposed overlay mark and the original design, it is shown that the optimized overlay mark target achieves better performance in terms of profiles, dynamic precision,tool induced shift (TIS), and residues. Furthermore, five types of overlay marks with dummy bars are studied, and a recommendation for the overlay marks is given.

  13. Preparation of Lead-free Thick-film Resistor Pastes

    Institute of Scientific and Technical Information of China (English)

    LUO Hui; LI Shihong; LIU Jisong; CHEN Liqiao; YING Xingang; WANG Ke

    2012-01-01

    The preparation of lead-free thick-film resistors are reported:using RuO2 and ruthenates as conductive particles,glass powders composed of B2O3,SiO2,CaO and Al2O3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al2O3 substrates,and then sintering in a belt furnace.X-ray diffraction (XRD) and electron scanning microscopy (SEM) have been used to characterize the conductive particles.The resistors exhibit good retiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80 Ω/□ to 600 Ω/□.The resistors prepared are qualified for common use.

  14. Development of metal oxide impregnated stilbite thick film ethanol sensor

    Energy Technology Data Exchange (ETDEWEB)

    Mahabole, M. P., E-mail: kashinath.bogle@gmail.com; Lakhane, M. A.; Choudhari, A. L.; Khairnar, R. S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded - 431606 (India)

    2016-05-06

    This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO{sub 2} and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

  15. The effect of grain size and film thickness on the thermal expansion coefficient of copper thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-02-01

    Cu thin films underwent thermal cycling to determine their coefficient of thermal expansion (CTE). The thermal stress of the Cu thin films with various microstructures (different grain size and film thickness) was measured using a curvature measurement system. The thermal expansion coefficients of the films were obtained from the slope of the stress-temperature curve with the knowledge of the Young's modulus and Poisson's ratio. The change in thermal stress with temperature of the Cu thin films tended to decrease with increasing grain size, resulting in an increase in the CTE. The thickness of Cu thin film had little effect on the thermal stress or the CTE.

  16. In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain optical coherence tomography.

    Science.gov (United States)

    Aranha Dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Schmidl, Doreen; Kucera, Martin; Unterhuber, Angelika; Hermand, Jean-Pierre; Werkmeister, René M

    2015-08-10

    Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new non-invasive fully automated approach to measure tear film thickness based on spectral domain optical coherence tomography and on an efficient delay estimator. Silicon wafer phantom were used to validate the thickness measurement. The technique was applied in vivo in healthy subjects. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the in vivo central tear film thickness measurements are precise and repeatable with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented approach could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

  17. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  18. CO2 Selective Potentiometric Sensor in Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Ralf Moos

    2008-08-01

    Full Text Available A potentiometric sensor device based on screen-printed Nasicon films was investigated. In order to transfer the promising sensor concept of an open sodium titanate reference to thick film technology, “sodium-rich” and “sodium-poor” formulations were compared. While the “sodium-rich” composition was found to react with the ion conducting Nasicon during thermal treatment, the “sodium-poor” reference mixture was identified as an appropriate reference composition. Screen-printed sensor devices were prepared and tested with respect to CO2 response, reproducibility, and cross-interference of oxygen. Excellent agreement with the theory was observed. With the integration of a screen-printed heater, sensor elements were operated actively heated in a cold gas stream.

  19. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  20. Novel Ballistic Processing of Sn-0.7Cu Thick Films

    Science.gov (United States)

    Cavero, D.; Stewart, K.; Morsi, K.

    2016-11-01

    The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

  1. Thick-film acoustic emission sensors for use in structurally integrated condition-monitoring applications.

    Science.gov (United States)

    Pickwell, Andrew J; Dorey, Robert A; Mba, David

    2011-09-01

    Monitoring the condition of complex engineering structures is an important aspect of modern engineering, eliminating unnecessary work and enabling planned maintenance, preventing failure. Acoustic emissions (AE) testing is one method of implementing continuous nondestructive structural health monitoring. A novel thick-film (17.6 μm) AE sensor is presented. Lead zirconate titanate thick films were fabricated using a powder/sol composite ink deposition technique and mechanically patterned to form a discrete thick-film piezoelectric AE sensor. The thick-film sensor was benchmarked against a commercial AE device and was found to exhibit comparable responses to simulated acoustic emissions.

  2. Non-linear dynamics of inlet film thickness during unsteady rolling process

    Science.gov (United States)

    Fu, Kuo; Zang, Yong; Gao, Zhiying; Qin, Qin; Wu, Diping

    2016-05-01

    The inlet film thickness directly affects film and stress distribution of rolling interfaces. Unsteady factors, such as unsteady back tension, may disturb the inlet film thickness. However, the current models of unsteady inlet film thickness lack unsteady disturbance factors and do not take surface topography into consideration. In this paper, based on the hydrodynamic analysis of inlet zone an unsteady rolling film model which concerns the direction of surface topography is built up. Considering the small fluctuation of inlet angle, absolute reduction, reduction ratio, inlet strip thickness and roll radius as the input variables and the fluctuation of inlet film thickness as the output variable, the non-linear relationship between the input and output is discussed. The discussion results show that there is 180° phase difference between the inlet film thickness and the input variables, such as the fluctuant absolute reduction, the fluctuant reduction ratio and non-uniform inlet strip thickness, but there is no phase difference between unsteady roll radius and the output. The inlet angle, the steady roll radius and the direction of surface topography have significant influence on the fluctuant amplitude of unsteady inlet film thickness. This study proposes an analysis method for unsteady inlet film thickness which takes surface topography and new disturbance factors into consideration.

  3. Microstructure and texture analysis of YBCO thick film with peritectic growth on unoriented silver substrate

    Institute of Scientific and Technical Information of China (English)

    WANG Jue; MALOUFI Nabila; FAN Zhanguo; XUE Xiangxin; ESLING Claude

    2009-01-01

    YBCO textured thick film was prepared by direct periteetic growth method. Microstructure of the film was characterized. Electron backscattered diffraction (EBSD) technique was applied to the film for quantitative texture analysis. The main difficulty in resolving the ori-entation of YBCO pseudo-cubic structure was investigated. Automated orientation mapping was performed on YBCO thick film. Local tex-ture was presented in the form of orientation maps. Misorientation distribution and crystal growth characterization in the YBCO thick film were revealed. Large domains with well-aligned YBCO grains were formed. Each domain presented clear in-plane and out-plane textures.

  4. Flexible graphene-PZT ferroelectric nonvolatile memory

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Tat Toh, Chee; Özyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm-2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  5. Lamb wave dispersion in a PZT/metal/PZT sandwich plate with imperfect interface

    Science.gov (United States)

    Kurt, Ilkay; Akbarov, Surkay D.; Sezer, Semih

    2016-07-01

    The Lamb wave dispersion in a PZT/Metal/PZT sandwich plate is investigated by employing the exact linear equations of electro-elastic waves in piezoelectric materials within the scope of the plane-strain state. It is assumed that at the interfaces between the piezoelectric face layers and metal core layer, shear-spring and normal-spring type imperfect conditions are satisfied. The degree of this imperfectness is estimated through the corresponding shear-spring and normal-spring type parameters which appear in the contact condition characterizing the transverse and normal displacements' discontinuity. The corresponding dispersion equation is derived, and as a result of the numerical solution to this equation, the dispersion curves are constructed for the first and second lowest modes in the cases where the material of the face layers is PZT and the material of the middle layer is Steel (St). Consequently, for the PZT/St/PZT sandwich plate, the study of the influence of the problem parameters such as the piezoelectric and dielectric constants, layer thickness ratios, non-dimensional shear-spring, and normal-spring type parameters, is carried out. In particular, it is established that the imperfectness of the contact between the layers of the plate causes a decrease in the values of the wave propagation velocity.

  6. Thickness dependent CARS measurement of polymeric thin films without depth-profiling.

    Science.gov (United States)

    Choi, Dae Sik; Jeoung, Sae Chae; Chon, Byung-Hyuk

    2008-02-18

    Coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated to be a promising optical method for the characterization of polymer films with film thickness varying between 180 nm to 4300 nm. In case of PMMA films with a thickness of few hundreds of nanometers, the observed CARS signal was mainly associated with the interference effect of large nonresonant CARS field from glass substrate and the weak resonant field of PMMA. The dependence of resonant CARS intensity of PMMA film on film thickness is in good agreement with the theoretical prediction on a CARS field. The current work offers potential possibilities of noninvasive thickness measurement of polymeric thin film of thickness less than 180 nm by multiplex CARS microscopy without depth-profiling.

  7. Development of Dual-light Path Monitoring System of Optical Thin-film Thickness

    Institute of Scientific and Technical Information of China (English)

    XU Shi-jun

    2005-01-01

    The accurate monitoring of optical thin-film thickness is a key technique for depositing optical thin-film. For existing coating equipments, which are low precision and automation level on monitoring thin-film thickness, a new photoelectric control and analysis system has been developed. In the new system, main techniques include a photoelectric system with dual-light path, a dual-lock-phase circuit system and a comprehensive digital processing-control-analysis system.The test results of new system show that the static and dynamic stabilities and the control precision of thin-film thickness are extremely increased. The standard deviation of thin-film thickness, which indicates the duplication of thin-film thickness monitoring, is equal to or less than 0.72%. The display resolution limit on reflectivity is 0.02 %. In the system, the linearity of drift is very high, and the static drift ratio approaches zero.

  8. Preparation and characterization of microcrack-free thick YBa2Cu3O7-δ films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    High quality epitaxial YBa2Cu3O7-δ (YBCO) superconducting films were fabricated on (00l) LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness (up to 2.0 μm) without microcracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan (θ-2θ, ω-scan, pole figure) and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density (Jc) strongly depended on the film thickness.Furthermore, the reasons for these thickness dependences were elucidated in derail.

  9. Layer-by-layer assembly of nanocomposite films with thickness up to hundreds of nanometers

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-de; YAN Yu-hua; YU Hai-hu; GU Er-dan; JIANG De-sheng

    2006-01-01

    Polyelectrolyte/polyelectrolyte, organic molecule/colloidal CdS and polyelectrolyte/MWCNT films were fabricated via the layer-by-layer assembling technique. The assembled films were characterized by UV-vis spectrophotometer, X-ray diffractometry,nano profilometer and scanning electron microscopy. The results demonstrate that the layer-by-layer assembling technique can be used to make the nanoscaled films from polyelectrolytes and thicker composite films from suitable precursor materials. Both organic molecule/colloidal CdS films and PEI/MWCNT films with thickness of hundreds of nanometers were obtained. For the organic molecule/colloidal CdS films, a reasonable explanation for the result is that both the organic molecules and the CdS particles aggregate in the films. For the PEI/MWCNT films, obviously, it is the MWCNT that makes the great contribution to the film thickness.

  10. On the film thickness of grease-lubricated contacts at low speed

    NARCIS (Netherlands)

    Cen, H.; Lugt, Pieter Martin; Morales-Espejel, G.E.

    2014-01-01

    The contribution of the thickener to the thickness of the lubricating film in grease-lubricated contacts is investigated. Four different types of greases were tested in a ball/spherical roller-on-disc machine, where the film thickness was measured using the interferometry method, varying the tempera

  11. Raman micro-spectroscopy for quantitative thickness measurement of nanometer thin polymer films

    NARCIS (Netherlands)

    Liszka, Barbara M.; Lenferink, Aufried T.M.; Witkamp, Geert-Jan; Otto, Cees

    2015-01-01

    The sensitivity of far-field Raman micro-spectroscopy was investigated to determine quantitatively the actual thickness of organic thin films. It is shown that the thickness of organic films can be quantitatively determined down to 3 nm with an error margin of 20% and down to 1.5 nm with an error ma

  12. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    Science.gov (United States)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  13. Measurement of the refractive index and thickness for infrared optical films deposited on rough substrates.

    Science.gov (United States)

    Saito, M; Nakamura, S; Miyagi, M

    1992-10-01

    A novel method is proposed to evaluate the refractive index and thickness of dielectric thin films in the infrared wavelength range. The method is useful for measurement of thin films that are formed on such rough substrates as metal plates, since it utilizes only the wavelengths of interference peaks, which is slightly affected by surface roughness of the sample. The method was applied to the measurement of germanium, zinc selenide, and lead fluoride films deposited on copper substrates. Measured thicknesses agreed well with the values that were obtained by ellipsometry, and refractive indices exhibited a tendency to increase with the film thickness.

  14. Laser desorption of NO from a thick C 60 film

    Science.gov (United States)

    Hoger, T.; Marzok, C.; Jongma, R. T.; Zacharias, H.

    2006-09-01

    The desorption of NO molecules from a thick C 60 film is reported. A thermal desorption spectrum indicates two adsorption sites with binding energies of Eb = 0.30 eV and 0.55 eV. For laser desorption the fullerene surface is exposed to NO and excited by 7 ns UV laser pulses. Desorbing NO molecules are recorded state selectively as well as time resolved. The time-of-flight measurement indicates three different desorption pathways. A fast channel shows rovibronic temperatures of Trot( v″ = 0) = 370 K, Trot( v″ = 1) = 390 K and Tvib = 610 K as well as strong rotational-translational coupling. The desorption yield for the fast channel increases linearly with pulse energy with a desorption cross section of σ = (5.1 ± 0.9) × 10 -17 cm 2. Dominating the signal for small J″ values is a slow channel with low rotational and translational temperatures of about 110 K. We assign this peak to a laser-induced thermal desorption. For large pump-probe delays the data deviate from the Maxwellian flux distribution and a third channel appears with extremely late arrival times.

  15. Relationship between Supplied Oil Flow Rates and Oil Film Thicknesses under Starved Elastohydrodynamic Lubrication

    Directory of Open Access Journals (Sweden)

    Taisuke Maruyama

    2015-04-01

    Full Text Available Many studies have already considered starved lubrication. However, there have been no reports on the oil film thicknesses under steady starved EHL (elastohydrodynamic lubrication, where the ultra-low volume of oil supplied per unit time is uniform. The present study examined the relationship between the supplied oil flow rate and oil film thickness under steady starved lubrication. A ball-on-disk testing machine was used in experiments to measure the oil film thickness by means of optical interferometry. A microsyringe pump was used to accurately control the supplied oil flow rate. The supplied oil flow rate was kept constant, and the minimum oil film thickness was measured for 1 h after the start of the tests to determine the relationship between the supplied oil flow rate and oil film thickness.

  16. Preparation and characterisation of novel thick sol-gel titania film photocatalysts.

    Science.gov (United States)

    Mills, Andrew; Elliott, Nicholas; Hill, George; Fallis, David; Durrant, James R; Willis, Richard L

    2003-05-01

    The preparation and characterization of thick (9 microns), clear, mechanically robust and photocatalytically active films of nanocrystalline anatase titania are described. XRD and SEM analysis show the films comprise 13 nm particles of anatase TiO2. Thin (54 nm) films of the 'paste' TiO2, along with sol-gel titania films made by a more traditional route are also prepared and characterised. All titania films mediate the photocatalytic destruction of stearic acid with a quantum yield of 0.0016 +/- 0.0003, using either 365 nm (i.e. BLB) or 254 nm (germicidal) light. P25 TiO2 films also appear to mediate the same process with a similar formal quantum efficiency. Of all the films tested, the thick paste TiO2 films are the most ideally suited for use with near UV light, for reasons which are discussed. All the titania films tested exhibit photoinduced superhydrophilicity.

  17. Film Thickness and Flow Properties of Resin-Based Cements at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Bagheri R.

    2013-06-01

    Full Text Available Statement of Problem: For a luting agent to allow complete seating of prosthetic restorations, it must obtain an appropriate flow rate maintaining a minimum film thickness. The performance of recently introduced luting agents in this regard has not been evaluated. Purpose: To measure and compare the film thickness and flow properties of seven resin-containing luting cements at different temperatures (37°C, 25°C and10°C. Material and Methods: Specimens were prepared from five resin luting cements; seT (SDI, Panavia F (Kuraray, Varioloink II (Ivoclar, Maxcem (Kerr, Nexus2 (Kerr and two resin-modified glass-ionomer luting cements (RM-GICs; GC Fuji Plus (GC Corporation, and RelyX Luting 2 (3 M/ESPE. The film thickness and flow rate of each cement (n=15 was determined using the test described in ISO at three different temperatures. Results: There was a linear correlation between film thickness and flow rate for most of the materials. Cooling increased fluidity of almost all materials while the effect of temperature on film thickness was material dependent. At 37°C, all products revealed a film thickness of less than 25µm except for GC Fuji Plus. At 25°C, all cements pro-duced a film thickness of less than 27 µm except for seT. At 10°C, apart from seT and Rely X Luting 2, the remaining cements showed a film thickness smaller than 20 µm.Conclusion: Cooling increased fluidity of almost all materials, however. the film thickness did not exceed 35 µm in either condition, in spite of the lowest film thickness being demonstrated at the lowest temperature.

  18. Spectral characteristics of nanometer-thick chromium films in terahertz frequency range

    Science.gov (United States)

    Andreev, V. G.; Angeluts, A. A.; Vdovin, V. A.; Lukichev, V. F.

    2015-02-01

    The spectral characteristics (reflection, transmission, and absorption coefficients) of thin chromium films on silica substrates have been measured using a pulsed source of terahertz radiation. The spectra of optical coefficients were obtained in a frequency range of 0.25-1.1 THz. Dependences of the optical coefficients on the metal film thickness at 1 THz were constructed. The maximum absorption coefficient (43%) was observed at a film thickness of 10 nm.

  19. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  20. Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

    Science.gov (United States)

    Shaaban, Essam R.; Kansal, Ishu; Mohamed, S. H.; Ferreira, Joés M. F.

    2009-11-01

    Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, α on the photon energy showed the occurrence of a direct transition with band gap energy Egopt=2.21±0.01 eV (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.

  1. Thickness-dependent stress in plasma-deposited silicon dioxide films

    Science.gov (United States)

    Au, V.; Charles, C.; Bulla, D. A. P.; Love, J. D.; Boswell, R. W.

    2005-04-01

    Thick silicon dioxide (SiO2) films up to 5 μm have been deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) as both bilayer and trilayer structures, and the film stress was investigated in the context of optical waveguide fabrication. A model for stress in the SiO2-Si bilayer as a function of film thickness is formulated and interpreted in terms of Volmer-Weber film growth mechanisms. We find that island coalescence begins at a film thickness of less than 165 nm and continues until about 700 nm. Above approximately 1 μm thickness, the film continues growth as a continuous film. The stress in a deposited SiO2 film in an SiO2-Si-SiO2 trilayer structure was investigated by adapting the established Stoney's equation for a trilayer system, and comparing it with a thermally grown SiO2 trilayer. A constant value of stress is obtained for the deposited SiO2 film for film thickness >1μm which was consistently less than both measured and previously reported values of stress in thermally grown SiO2.

  2. Change in Tear Film Lipid Layer Thickness, Corneal Thickness, Volume and Topography after Superficial Cauterization for Conjunctivochalasis.

    Science.gov (United States)

    Chan, Tommy C Y; Ye, Cong; Ng, Paul K F; Li, Emmy Y M; Yuen, Hunter K L; Jhanji, Vishal

    2015-07-17

    We evaluated the change in tear film lipid layer thickness, corneal thickness, volume and topography after superficial cauterization of symptomatic conjunctivochalasis. Bilateral superficial conjunctival cauterization was performed in 36 eyes of 18 patients with symptomatic conjunctivochalasis. The mean age of patients (12 males, 6 females) was 68.6 ± 10.9 years (range: 44-83 years). Preoperatively, 28 eyes (77.8%) had grade 1 conjunctivochalasis, and 8 eyes (22.2%) had grade 2 conjunctivochalasis. At 1 month postoperatively, the severity of conjunctivochalasis decreased significantly (p corneal thickness, thinnest corneal thickness and corneal volume decreased significantly postoperatively (p corneal thickness and volume were observed after surgical correction of conjunctivochalasis.

  3. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  4. BIMORPH-TYPE PIEZOELECTRIC THIN FILM BENDING ACTUATORS SYNTHESIZED BY HYDROTHERMAL METHOD

    Institute of Scientific and Technical Information of China (English)

    Du Liqun; Arai Fumihito; Fukuda Toshio; Kwon Guiryong

    2004-01-01

    Lead zirconate titanium solid-solution (PZT) thin films with various thickness are synthesized on titanium substrates by repeated hydrothermal treatments.Young modulus,electric-field- induced displacement and the density of the PZT film are measured respectively.Bimorph- type bending actuators are fabricated using these films.The model,which is used to analyze the driving ability of bimorph-type bending actuators by hydrothermal method,is set up.It can be seen that the driving ability of bimorph-type bending actuators can be greatly improved by optimizing the thickness of PZT thin film and substrate from the theoretical analysis results.The measured values are expected to agree with the theoretical values calculated by the above model.

  5. Preparation and study of thickness dependent electrical characteristics of zinc sulfide thin films

    Indian Academy of Sciences (India)

    A U Ubale; D K Kulkarni

    2005-02-01

    Zinc sulfide thin films have been deposited onto glass substrates by chemical bath deposition. The various deposition parameters such as volume of sulfide ion source, pH of bath, deposition time, temperature etc are optimized. Thin films of ZnS with different thicknesses of 76–332 nm were prepared by changing the deposition time from 6–20 h at 30°C temperature. The effect of film thickness on structural and electrical properties was studied. The electrical resistivity was decreased from 1.83 × 105 -cm to 0.363 × 105 -cm as film thickness decreased from 332 nm to 76 nm. The structural and activation energy studies support this decrease in the resistivity due to improvement in crystallinity of the films which would increase the charge carrier mobility and decrease in defect levels with increase in the thickness.

  6. The preparation, processing and properties of thin and thick films for microelectric applications

    Science.gov (United States)

    Bagley, B. G.; Greene, L. H.; Barboux, P.; Tarascon, J. M.; Venkatesan, T.

    High-Tc thin and thick films of YBa2Cu2O(7-y) and thick films based on the Bi-Sr-Ca-Cu and Tl-Ba-Ca-Cu systems were prepared and their properties investigated. It was found that YB2Cu3O(7-y) thin films prepared at temperatures up to 400 C, have amorphous structures, and those prepared in the 400-650 C region exhibit polyphase microstructure, due to the rapid crystallization kinetics of the competing phases. Methods for bipassing the 'forbidden' temperature region are described. Preparation of YBa2Cu2O(7-y) thick films was achieved via an aqueous sol-gel technique. Bi-Sr-Ca-Cu- and Tl-Ba-Ca-Cu-based thick films were prepared via the decomposition of glycerol-based solutions containing nitrates of the elements.

  7. Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

    Science.gov (United States)

    Krantz, Timothy Lewis

    2013-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

  8. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    Science.gov (United States)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  9. Studies on gas sensing performance of pure and modified barium strontium titanate thick film resistors

    Indian Academy of Sciences (India)

    G H Jain; L A Patil; P P Patil; U P Mulik; K R Patil

    2007-02-01

    Barium strontium titanate ((Ba0.87Sr0.13)TiO3–BST) ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The effect of film thickness on gas response was also studied. As prepared BST thick films were surface modified by dipping them into an aqueous solution of titanium chloride (TiCl3) for different intervals of time. Surface modification shifted response to H2S gas suppressing the responses to ammonia and other gases. The surface modification, using dipping process, altered the adsorbate–adsorbent interactions, which gave the unusual sensitivity and selectivity effect. Sensitivity, selectivity, thermal stability, response and recovery time of the sensor were measured and presented.

  10. Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Trinh, Thong Q.; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

    2014-01-01

    Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (undoped PZT) and doped PZT thin films with thickness of about 500 nm were grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition (PLD). In this study, 1.0 mol% Nb-doping (at Zr/Ti site) as donor, 1.0 mol% Fe-doping (at Zr/Ti) as acceptor and 10 mol%

  11. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Science.gov (United States)

    Tune, Daniel D.; Shapter, Joseph G.

    2013-01-01

    The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  12. Non-contacting Measurement of Oil Film Thickness Between Loaded Metallic Gear Teeth

    Science.gov (United States)

    Cox, Daniel B.; Ceccio, Steven L.; Dowling, David R.

    2013-11-01

    The mechanical power transmission efficiency of gears is depends on the lubrication condition between gear teeth. While the lubrication levels can be generally predicted, an effective in-situ non-contacting measurement of oil film thicknesses between loaded metallic gear teeth has proved elusive. This study explores a novel oil film thickness measurement technique based on optical fluence, the light energy transmitted between loaded gear teeth. A gear testing apparatus that allowed independent control of gear rotation rate, load torque, and oil flow was designed and built. Film thickness measurements made with 5-inch-pitch-diameter 60-tooth spur gears ranged from 0.3 to 10.2 mil. These results are compared with film thickness measurements made in an earlier investigation (MacConochie and Cameron, 1960), as well as with predictions from two film thickness models: a simple two-dimensional squeezed oil film and the industry-accepted model as described by the American Gear Manufacturers Association (AGMA 925, 2003). In each case, the measured film thicknesses were larger than the predicted thicknesses, though these discrepancies might be attributed to the specifics the experiments and to challenges associated with calibrating the fluence measurements. [Sponsored by General Electric].

  13. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  14. Field electron emission from undoped, continuous, submicron-thick diamond films

    Science.gov (United States)

    Ternyak, O.; Akhvlediani, R.; Hoffman, A.; Wong, W. K.; Lee, S. T.; Lifshitz, Y.; Daren, S.; Cheifetz, E.

    2005-12-01

    The present work shows that the field electron emission (FEE) properties of polycrystalline diamond films can be enhanced by control over the film thickness. The FEE properties of undoped, continuous, and smooth submicron-thick diamond films with initial nucleation densities of ˜5×1010particles/cm2 were investigated as a function of diamond film thickness. A set of films with thickness ranging from 70-100to830nm yielded turn-on field values of 6-8V/μm and threshold field values of 8.5-17.5V/μm (for 0.3μA/cm2), respectively, without any conditioning. It was found that the films of thickness up to ˜370nm can sustain stable current density as high as 0.1A/cm2 without morphological modification. The thicker films, however, suffer from a strong degradation of the film and breakdown. The best FEE (lower turn-on and threshold fields and morphological stability) was obtained for a thin (100nm) continuous diamond film. This result is suggested to be attributed mainly to the efficient electron conduction from the back contact to the surface.

  15. Optical coefficients of nanometer-thick copper and gold films in microwave frequency range

    Science.gov (United States)

    Khorin, I.; Orlikovsky, N.; Rogozhin, A.; Tatarintsev, A.; Pronin, S.; Andreev, V.; Vdovin, V.

    2016-12-01

    Ultrathin (1-10 nm) Cu and Au films were prepared on the silicon and quartz substrates by magnetron sputtering at room temperature. We measured the transmission coefficient of the films at a wavelength of 3cm and analyzed a surface morphology of these films. It was shown that the films with thicknesses less than 7.5 nm (Au) and 3 nm (Cu) are almost transparent for microwaves. This effect is explained by quick oxidation of Cu and the complex surface morphology of nanometer thick films. The Au film morphology is evolved with increasing average Au thickness d from hemispherical islands initially (1.0 nm

  16. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-08-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  17. Effect of Thickness of Single-Phase Antimony and Tellurium Thin Films on Their Thermal Conductivities.

    Science.gov (United States)

    Park, No-Won; Park, Sang-In; Lee, Sang-Kwon

    2015-09-01

    We present the effects of film thickness and grain size on the out-of-plane thermal conductivities of single-phase Sb and Te thin films, which are of great interest for thermoelectric device applications. The thermal conductivities of the films were measured by the four-point-probe 3Ωo method, at room temperature. For this study, 50-, 100-, and 200-nm-thick Sb and Te thin films were prepared by electron-beam evaporation at room temperature. From the measured thermal conductivities, we evaluated that the average thermal conductivities of the Sb and Te thin films were 5.9-10.2 W/(m x K) and 0.8-1.2 W/(m x K), respectively, at room temperature. This result reveals that the thickness and grain size of each thin film strongly affect the modulation of its thermal conductivity at room temperature.

  18. Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

    2014-07-21

    A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

  19. The Thickness Distribution of Oxidation Film on Tapered Pipe Surface in Dieless Drawing

    Directory of Open Access Journals (Sweden)

    Fang Qin

    2011-01-01

    Full Text Available The thickness distribution of oxidation film on the surface of AISI304 stainless steel tapered pipe, its influence factors, and the effect of metal matrix deformation on oxidation behavior during dieless drawing were studied in this paper. The results showed that oxidation rate was affected strongly by induction heating temperature and deformation degree. The thickness distribution of oxidation film was uneven and increased from the larger diameter end to the smaller diameter end along the axial direction of tapered pipe. When induction heating temperature raised or the distance between heat and cold sources was increased, or feed speed was decreased, oxidation rate was accelerated and oxidation film on the tapered pipe surface thickened significantly, due to massive cracks in oxidation film induced by deformation of metal matrix. The density and width of cracks in oxidation film were enlarged, and the thickness of oxidation film increased with the increase in deformation degree.

  20. Abnormal Cutoff Thickness of Long-Range Surface Plasmon Polariton Modes Guided by Thin Metal Films

    Institute of Scientific and Technical Information of China (English)

    LIU Fang; RAO Yi; HUANG Yi-Dong; ZHANG Wei; PENG Jiang-De

    2007-01-01

    Long-range surface plasmon polariton(LRSPP) modes guided by a thin metal film surrounded by semi-infinite dielectrics with different refractive indices are studied.Our cMculation results show that the cutoff thickness of the metal film does not monotonically increase with refractive index difference △n between the SHbstrate and superstrate.Just because of this abnormal behaviour of cutoff thickness,the existence of LRSPP illustrates complicated situations in asymmetric configurations.For a certain metal film thickness,LRsPP may exist in one.two or three refractive index difference △n regions.

  1. Ultrasonic oil-film thickness measurement: An angular spectrum approach to assess performance limits

    OpenAIRE

    Zhang, J.; Drinkwater, B.W.; Dwyer-Joyce, R.S.

    2007-01-01

    The performance of ultrasonic oil-film thickness measurement in a ball bearing is quantified. A range of different viscosity oils (Shell T68, VG15, and VG5) are used to explore the lowest reflection coefficient and hence the thinnest oil-film thickness that the system can measure. The results show a minimum reflection coefficient of 0.07 for both oil VG15 and VG5 and 0.09 for oil T68 at 50 MHz. This corresponds to an oil-film thickness of 0.4 μm for T68 oil. An angular spectrum (or Fourier d...

  2. High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications

    Science.gov (United States)

    Jeon, Chang Jun; Hwang, Ha Na; Jeong, Young Hun; Yun, Ji Sun; Nam, Joong Hee; Cho, Jeong Ho; Paik, Jong Hoo; Lim, Jong Bong; Nahm, Sahn; Kim, Eung Soo

    2013-11-01

    0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant ( d 33), dielectric constant ( ɛ {33/ T }/ ɛ 0), piezoelectric voltage constant ( g 33) and transduction coefficient ( d 33· g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tan δ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, ɛ {33/ T }/ ɛ 0 of 1444, d 33· g 33 of 20,340 × 10-15 m2/N and tan δ of 0.15% were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.

  3. Ptychographic Imaging of Branched Colloidal Nanocrystals Embedded in Free-Standing Thick Polystyrene Films

    Science.gov (United States)

    de Caro, Liberato; Altamura, Davide; Arciniegas, Milena; Siliqi, Dritan; Kim, Mee R.; Sibillano, Teresa; Manna, Liberato; Giannini, Cinzia

    2016-01-01

    Research on composite materials is facing, among others, the challenging task of incorporating nanocrystals, and their superstructures, in polymer matrices. Electron microscopy can typically image nanometre-scale structures embedded in thin polymer films, but not in films that are micron size thick. Here, X-ray Ptychography was used to visualize, with a resolution of a few tens of nanometers, how CdSe/CdS octapod-shaped nanocrystals self-assemble in polystyrene films of 24 ± 4 μm, providing a unique means for non-destructive investigation of nanoparticles distribution and organization in thick polymer films.

  4. Phase thickness approach for determination of thin film refractive index dispersion from transmittance spectra

    Science.gov (United States)

    Nenkov, M. R.; Pencheva, T. G.

    2008-06-01

    A novel approach for determination of refractive index dispersion n(λ ) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate and titanium oxide thin films are investigated and their n(λ ) and d are calculated. The approach is validated using Swanepoel's method and it is found to be applicable for relatively thinner films when measured transmittance spectra have one minimum and one maximum only.

  5. Impressive electromagnetic shielding effects exhibited by highly ordered, micrometer thick polyaniline films

    Science.gov (United States)

    Mohan, Ranjini R.; Varma, Sreekanth J.; Sankaran, Jayalekshmi

    2016-04-01

    The present work highlights the remarkably high shielding effectiveness of about 68 dB, exhibited by highly ordered and doped polyaniline films, in the microwave frequency range 4-12 GHz, obtained by self-stabilized dispersion polymerization as the synthesis route. The observed shielding effectiveness is found to depend quite sensitively on the electrical conducting properties, which are predominantly controlled by the nature and concentration of the dopants. The structural and morphological characterization of the films using XRD and TEM techniques reveals surprisingly high extent of crystallinity, which contributes significantly towards enhancing the electrical conductivity of the films. Most of the available reports on the microwave response of conducting polymer film samples deal with much thicker films, compared to the micrometer thick films of the present studies. The shielding effectiveness of acid doped, micrometer thick polyaniline films reported in the present work far exceeds most of the previously reported values and meets the commercial requirements.

  6. Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    G. H. JAIN

    2008-04-01

    Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

  7. Thickness measurement of organic films using Compton scattering of characteristic X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Yun, E-mail: kjy@kaeri.re.kr [Nuclear Chemistry Research Division, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Choi, Yong Suk; Park, Yong Joon; Song, Kyuseok [Nuclear Chemistry Research Division, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Jung, Sung-Hee [Division of Radioisotope R and D, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Hussein, Esam M.A. [Laboratory for Threat Materials Detection, Department of Mechanical Engineering, University of New Brunswick, Fredericton, New Brunswick, Canada E3B 5A3 (Canada)

    2011-09-15

    An X-ray scattering method is presented for determining the thickness of an organic film placed on a steel substrate. The strong peaks of characteristic X-rays are taken as an advantage to measure the intensity of backscattered photons. It is shown that the intensity of Compton scattering of characteristic X-rays is proportional to film thickness, up to the thickness of 250 {mu}m of acrylic adhesive layers. In addition, the measurement time was 300 ms, providing a simple and convenient method for on-line for thickness monitoring.

  8. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  9. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  10. Systematic experimental study of pure shear type dielectric elastomer membranes with different electrode and film thicknesses

    Science.gov (United States)

    Hodgins, M.; Seelecke, S.

    2016-09-01

    An approach to reduce the voltage required for dielectric elastomer actuators is to reduce film thickness. However, if the electrode thickness is not similarly reduced, the electrode’s mechanical behavior can increasingly and negatively impact the overall actuator behavior. This effect is yet to be studied and quantified for pure shear type specimens; a type recommended in a recent DE standardization journal publication. Therefore, in this work, using pure shear specimens, a comparative study of membrane actuators of different film thickness (20, 50 and 100 μm) is performed. Electrodes of different thicknesses are screen printed and tested in a uniaxial test device. The stiffening effect due to the solid-state electrodes is demonstrated by performing force-elongation tests for specimens with and without electrodes. Additionally the importance of thin electrodes (relative to film thickness) was demonstrated through a number of electromechanical tests. Isotonic tests revealed a lower electro-mechanical sensitivity for the 20 μm film when compared with the 50 and 100 μm films. This was attributed to the relatively thick electrodes. Best actuation results were achieved when the total electrode thickness was at least 15x thinner than the dielectric membrane thickness.

  11. Thickness dependence of Jc (0) in MgB2 films

    Science.gov (United States)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-06-01

    MgB2 superconducting films, whose thicknesses range from 10 nm to 8 μm, have been fabricated on SiC substrates by hybrid physical-chemical vapor deposition (HPCVD) method. It is the first time that the Tc and the Jc of MgB2 films are studied on such a large scale. It is found that with the increasing of thickness, Tc elevates first and then keeps roughly stable except for some slight fluctuations, while Jc (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum Jc (5 K, 0 T) = 2.3 × 108 A cm-2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB2 films.

  12. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Science.gov (United States)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy

    2016-11-01

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50-300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (TA) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing TA, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing TA and changing annealing conditions.

  13. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    Science.gov (United States)

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  14. Influence of film thickness and In-doping on physical properties of CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Butt, Sajid, E-mail: sajidarif@hotmail.com [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); Thermal Transport Laboratory, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Nazir, Adnan [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Ali, Zulfiqar [Optics Laboratories, P. O. Box 1021, Islamabad (Pakistan); Maqsood, Asghri [CESET, Center for Emerging Sciences, Engineering and Technology, Islamabad (Pakistan)

    2014-02-25

    Highlights: • Fabrication of polycrystalline CdS thin films by Close Spaced Sublimation technique. • The direct band gap of 2.44 eV and the electrical resistivity in the order of 10{sup 6}–10{sup 8} Ω cm was measured. • Resistivity was reduced to the order of 10{sup –2}–10{sup 1} Ω m by the thermally diffusion of indium into CdS films. -- Abstract: Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 10{sup 6}–10{sup 8} Ω cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10{sup −2}–10{sup 1} Ω cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

  15. Thickness dependence of temperature coefficient of resistivity of polycrystalline bismuth films

    Science.gov (United States)

    Kumar, Ajay; Katyal, O. P.

    1991-04-01

    Results for the temperature coefficient of resistivity (TCR) of polycrystalline bismuth films deposited on to glass substrate are reported for the thickness range 30 300 nm. The film TCR is found to be negative for all thicknesses studied and its absolute value exhibits a maximum of 3.70×10-3 K-1 near 72.5 nm. The variation of charge carrier density with film thickness has been estimated from the presence of surface states. To include the thickness dependence of charge carrier density, a modified theory has been used to explain the observed behaviour of the TCR. The experimental results for the TCR of Bi films are found to be consistent with the theoretical values. The existence of the extremum is theoretically verified. From the analysis, the specularity parameter p is about 0.44 and the reflection coefficient R is 0.1.

  16. Measurement of material thickness in the presence of a protective film

    Science.gov (United States)

    Ramamurthy, Rajesh; Harding, Kevin

    2017-05-01

    Many sheet products from plastic to structural composites are produce in tightly controlled thickness needed for functional applications. There are many methods that have been used to measure such sheeting from mechanical rollers to optical micrometers. However, many materials are produced with a thin protective film on either side that may not have critical dimensional controls. This paper addresses the challenge of measuring sheet products to critical thickness values in the presence of protective plastic films using high speed optical gaging methods. For this application, the protective films are assumed to be transparent though not necessarily scatter free, and have thickness variations that are comparable to the tolerances of the sheet product. We will examine the pros and cons of a number of different optical measurement methods in light of resolution, speed and robustness to the film thickness variation and present an approach able to address the desired sheet measurement tolerances.

  17. Determination of Thickness of an Inaccessible Thin Film under a Multilayered System from Natural Frequencies

    Institute of Scientific and Technical Information of China (English)

    ZHOU Chang-Zhi; LI Ming-Xuan; MAO Jie; WANG Xiao-Min

    2008-01-01

    @@ We investigate the relationship between natural frequencies of a multilayered system of different elastic materials and the thickness of the undermost thin film. The natural frequencies are numerically calculated from the reflection coefficient of a sample system of "steel-epoxy resin-aluminium-thin polymer' with normal incidence.Strain energy ratio is defined and calculated to give the physics explanation why some frequencies are sensitive to thickness of the thin film in certain range. Experiments of three specimens indicate that the measured natural frequencies agree well with the theoretical ones. It is found in our experiments that the ratio of the lowest film thickness to wavelength is about 1/5. The average relative errors for the inverted polymer film thicknesses are found to be 11.8%, -4.8% and -1.3%, respectively.

  18. Effects of chromophore concentration and film thickness on thermo-optic properties of electro-optic fluorinated polyimide films

    Institute of Scientific and Technical Information of China (English)

    Hongxiang Song; Chengxun Wu

    2007-01-01

    Electro-optic (EO) effect and thermo-optic (TO) effect are jointly considered on the basis of field-induced and temperature-affected perturbations of the operating point in waveguide components. TO coefficients of EO fluorinated polyimide films with side-chain azobenzene chromophore were measured by attenuatedtotal-reflection (ATR) technique at different temperatures with TE- and TM-polarized lights, respectively.It is found that the absolute values of TO coefficients increase with the increments of both chromophore concentration and film thickness, but the polarization dependence of TO coefficients increases with the increment of chromophore concentration and decreases with the increment of film thickness.

  19. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  20. Influence of the thickness absorbing film on the PETN ignition threshold by a laser pulse

    Directory of Open Access Journals (Sweden)

    Dolgachev Vadim A.

    2015-01-01

    Full Text Available Numerical simulation of the PETN ignition by a film, which is heated by a laser pulse was conducted. There are shown that dependence of threshold energy of ignition of PETN by a laser pulse has a linear dependence from the thicknesses of the absorbing film. Calculations shown that critical the temperature on the boundary of two materials by the end of a laser pulse with threshold density doesn’t depend from the thickness of the absorbing film. The ignition delay time of PETN by the thick film less than the ignition delay time of PETN by the thin film. The reason is that the thicker contain more heat then in the thinner one.

  1. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  2. Photometric method of determining gold film thickness of nuclear radiation silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, B.A.; Zakharchuk, D.V.; Kovalev, I.I.; Nikolaeva, T.V.; Serushkina, E.S.

    1987-07-01

    The authors examine a photometric method of assessing a nuclear radiation silicon detector's gold film thickness based on the photocurrent from a light passed through the sputtered metal layer. The surface-barrier detectors of nuclear radiations with a gold front contact are characterized by a high sensitivity to light in the 0.4-1.0 micrometer wavelength band. The relative error of determining the gold film thickness using the method examined here is of the 7% order.

  3. Investigation of thickness effects on the dielectric constant barium strontium titanate thin films

    CERN Document Server

    Grattan, L J

    2002-01-01

    The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor model assuming low dielectric constant interfacial layers in series with the bulk. Consideration of the case where the combined 'dead layer' thickness was close to the total BST thickness revealed that, for this system, the total 'dead layer' thickness had to be less than ...

  4. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Directory of Open Access Journals (Sweden)

    Gunter Hagen

    2011-08-01

    Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

  5. Thickness Effect on Properties of Sprayed In2S3 Films for Photovoltaic Applications

    Science.gov (United States)

    Bouguila, N.; Kraini, M.; Halidou, I.; Lacaze, E.; Bouchriha, H.; Bouzouita, H.

    2016-01-01

    Indium sulfide (In2S3) films have been deposited on soda-lime glass substrates using a spray technique (CSP). Indium chloride and thiourea were used as precursors at a molar ratio of S:In = 2. The substrate temperature was fixed at 340°C. The effect of film thickness on the structural, morphological and optical properties of the as-deposited films has been studied. These films were characterized by x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical absorption spectroscopy. As-prepared samples were polycrystalline with a cubic structure and (400) as preferential orientation. Their grain size increased from 35 nm to 41 nm with increasing thickness whereas the dislocation density and microstrain of the films decreased with the increase of thickness. Both SEM and AFM images showed that the films were homogenous with an increase of the surface roughness with the increase of thickness. The optical transmittance of the films decreased from 80% to 20% in the visible and infrared regions when the thickness was increased from 0.78 μm to 6.09 μm. The optical band gap E g was found to be in the range of 2.75-2.19 eV and showed a decrease with film thickness. Based on the measured optical constants (n and k), a Wemple-Didomenico model was used to determine the values of single oscillator energy ( E 0), dispersion energy ( E d), optical band gap ( E g) and high frequency dielectric constant ( \\varepsilon_{∞} ). In addition, these films exhibited n-type conductivity and were highly resistive. These results confirm that In2S3 thin films are a promising alternative as a buffer-layer material for CuInGa(S,Se)2-based solar cells.

  6. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  7. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  8. Thickness dependence of magnetic properties in La–Co substituted strontium hexaferrite films with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Yajuan [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Cheng, Weiming, E-mail: wmcheng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yan, Peng [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Jincai [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Miao, Xiangshui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-15

    The thickness dependence of magnetization reversal and coercivity behavior for La–Co substituted strontium hexaferrite (Sr-M) films was investigated. It is found that perpendicular anisotropy appears only when film thickness (t) is above 110 nm. With increasing t, perpendicular anisotropy energy (K{sub u⊥}) increases gradually to its maximum of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm, but turns to decrease when t>300 nm. Moreover, when t>110 nm, those films exhibit domains pinning or Stoner–Wohlfarth reversal model, present large K{sub u⊥} values and a rapid increase in H{sub c⊥}. However, while t≤110 nm, Sr-M films show nucleation model of magnetization reversal and perform low coercivity. The origin of the coercivity varying with thickness should be correlated with the grain size and preferred orientations in Sr-M films. - Highlights: • Thickness dependence in submicro-scale bulk system is investigated for La–Sr–Co–Fe–O films. • (0 0 1) preferred orientation gradually increases until t=300 nm and then declines. • The magnetization reversal presents different models with thickness. • Perpendicular anisotropy energy increases to maximum value of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm. • The coercivity varying with thickness is correlated with the grain size and preferred orientation.

  9. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang, E-mail: liuqf@lzu.edu.cn

    2015-03-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra.

  10. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  11. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Directory of Open Access Journals (Sweden)

    Guowen Ding

    2015-11-01

    Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  12. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects

    Energy Technology Data Exchange (ETDEWEB)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji, E-mail: sakurai@yuhgiri.nims.go.jp [University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan)

    2011-11-02

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at {approx}70 {sup 0}C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d {<=} R{sub g}, the onset of such a transition is affected by the film thickness while very thick films, d >> R{sub g}, yielded higher contact angles. Annealing the MC thin films with thicknesses {approx}200 A (near the radius of gyration, R{sub g}, of the polymer) below the bulk glass transition temperature (T{sub g} {approx} 195 deg. C) would not change the hydrophobic switch nature of the film but annealing 'at' and above the bulk T{sub g} would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications. (paper)

  13. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects.

    Science.gov (United States)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji

    2011-11-02

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at ∼70 °C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d ≤ R(g), the onset of such a transition is affected by the film thickness while very thick films, d ≫ R(g), yielded higher contact angles. Annealing the MC thin films with thicknesses ∼200 Å (near the radius of gyration, R(g), of the polymer) below the bulk glass transition temperature (T(g) ∼ 195 ° C) would not change the hydrophobic switch nature of the film but annealing 'at' and above the bulk T(g) would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications.

  14. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects

    Science.gov (United States)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji

    2011-11-01

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at ˜70 °C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d ≤ Rg, the onset of such a transition is affected by the film thickness while very thick films, d ≫ Rg, yielded higher contact angles. Annealing the MC thin films with thicknesses ˜200 Å (near the radius of gyration, Rg, of the polymer) below the bulk glass transition temperature (Tg ˜ 195 ° C) would not change the hydrophobic switch nature of the film but annealing ‘at’ and above the bulk Tg would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications.

  15. Quantifying Local Thickness and Composition in Thin Films of Organic Photovoltaic Blends by Raman Scattering

    KAUST Repository

    Rodríguez-Martínez, Xabier

    2017-07-06

    We report a methodology based on Raman spectroscopy that enables the non-invasive and fast quantitative determination of local thickness and composition in thin films (from few monolayers to hundreds of nm) of one or more components. We apply our methodology to blends of organic conjugated materials relevant in the field of organic photovoltaics. As a first step, we exploit the transfer-matrix formalism to describe the Raman process in thin films including reabsorption and interference effects of the incoming and scattered electric fields. This allows determining the effective solid-state Raman cross-section of each material by studying the dependence of the Raman intensity on film thickness. These effective cross sections are then used to estimate the local thickness and composition in a series of polymer:fullerene blends. We find that the model is accurate within ±10 nm in thickness and ±5 vol% in composition provided that (i) the film thickness is kept below the thickness corresponding to the first maximum of the calculated Raman intensity oscillation; (ii) the materials making up the blend show close enough effective Raman cross-sections; and (iii) the degree of order attained by the conjugated polymer in the blend is similar to that achieved when cast alone. Our methodology opens the possibility to make quantitative maps of composition and thickness over large areas (from microns to centimetres squared) with diffraction-limited resolution and in any multi-component system based thin film technology.

  16. Gas sensing properties of Cu and Cr activated BST thick films

    Indian Academy of Sciences (India)

    G H Jain; L A Patil

    2006-08-01

    H2S gas sensing properties of BST ((Ba0.67Sr0.33)TiO3) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical process. Thick films of BST were prepared by screen-printing technique. The sensing performance of the films was tested for various gases. The films were surface customized by dipping them into aqueous solutions of CuCl2 and CrO3 for various intervals of time. These surface modified BST films showed improved sensitivity to H2S gas (100 ppm) than pure BST film. Chromium oxide was observed to be a better activator than copper oxide in H2S gas sensing. The effect of microstructure and amount of activators on H2S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.

  17. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  18. Effect of heat and film thickness on a photoinduced phase transition in azobenzene liquid crystalline polyesters

    DEFF Research Database (Denmark)

    Sanchez, C; Alcala, R; Hvilsted, Søren

    2003-01-01

    The liquid crystal to isotropic phase transition induced with 488 nm light in films of liquid crystalline azobenzene polyesters has been studied as a function of temperature, light intensity, and film thickness. That phase transition is associated with the photoinduced trans-cis-trans isomerizati...

  19. Performance of PZT based MEMS devices with integrated ZnO electronics

    Science.gov (United States)

    Wallace, Margeaux

    This thesis describes routes to enable increased understanding and performance of lead zirconate titanate-based microelectromechanical systems (MEMS). Emphasis was placed on monolithic integration with interposer electronics, and in understanding the role of mechanical boundary conditions on the ferroelectric/ferroelastic response. Co-processing of ZnO thin film transistors (TFTs) with Pb(Zr0.52 Ti0.48)0.98Nb0.02O3 (PZT)-based piezoelectrics was investigated to assess whether interposer electronics on PZT can serve as a control scheme for large area arrays of sensors or actuators. ZnO TFT processing produced no measured changes in remanent polarization, dielectric constant, loss tangent, or aging rates. The TFT performance also did not degrade when fabricated on top of the PZT, the mobility (> 24 cm/Vs) remaining comparable to TFTs deposited on glass. To show ZnO array integration, a 5x5 array of PZT capacitors on glass was fabricated as a prototype for an adjustable X-ray mirror, where the ZnO TFT were used for row-column addressing of the actuators. 1.5 mum thick sputter deposited PZT on glass patterned with large area (cm2) electrodes had a dielectric constant of >1200, tandelta ˜ 2% and an average remanent polarization >23 muC/cm 2. Photoreactive benzocyclobutene (BCB) electrically isolated the ZnO TFTs from the top electrodes of the piezoelectric. Flex cables were bonded to the wafer using anisotropic conductive film (ACF) to connect the gates (row control) and the drains (column control) in the TFT array to a control box. It was found that when actuating the PZT cells through the TFT array, the glass mirror experienced approximately 1.5 mum of deflection for a 10 V application. Studies on ferroelectric/ferroelastic domain reorientation were also performed on 1.9 mum thick tetragonal {001} oriented PbZr0.3Ti 0.7O3 films doped with 1% Mn. Different mechanical boundary constraints were investigated and domain reorientation was quantified through the intensity

  20. Plasmonic extinction in gold nanoparticle-polymer films as film thickness and nanoparticle separation decrease below resonant wavelength

    Science.gov (United States)

    Dunklin, Jeremy R.; Bodinger, Carter; Forcherio, Gregory T.; Keith Roper, D.

    2017-01-01

    Plasmonic nanoparticles embedded in polymer films enhance optoelectronic properties of photovoltaics, sensors, and interconnects. This work examined optical extinction of polymer films containing randomly dispersed gold nanoparticles (AuNP) with negligible Rayleigh scattering cross-sections at particle separations and film thicknesses less than (sub-) to greater than (super-) the localized surface plasmon resonant (LSPR) wavelength, λLSPR. Optical extinction followed opposite trends in sub- and superwavelength films on a per nanoparticle basis. In ˜70-nm-thick polyvinylpyrrolidone films containing 16 nm AuNP, measured resonant extinction per particle decreased as particle separation decreased from ˜130 to 76 nm, consistent with trends from Maxwell Garnett effective medium theory and coupled dipole approximation. In ˜1-mm-thick polydimethylsiloxane films containing 16-nm AuNP, resonant extinction per particle plateaued at particle separations ≥λLSPR, then increased as particle separation radius decreased from ˜514 to 408 nm. Contributions from isolated particles, interparticle interactions and heterogeneities in sub- and super-λLSPR films containing AuNP at sub-λLSPR separations were examined. Characterizing optoplasmonics of thin polymer films embedded with plasmonic NP supports rational development of optoelectronic, biomedical, and catalytic activity using these nanocomposites.

  1. Temperature Dependent Electrical Properties of PZT Wafer

    Science.gov (United States)

    Basu, T.; Sen, S.; Seal, A.; Sen, A.

    2016-04-01

    The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

  2. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    OpenAIRE

    Bakrania, Smitesh D.; Margaret S. Wooldridge

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition meth...

  3. The Influence of Electrical Pulses on Thick Film (Du Pont 1421 Birox) Resistors

    OpenAIRE

    Tancula, M.; Kozlowski, J. M.

    1982-01-01

    This paper presents data on the effect of electric pulses on thick film resistors made using Du Pont 1421 Birox resistor pastes.Resistance changes during the application of the electric pulses were investigated. Two types of change were observed: reversible and irreversible (i.e. catastrophic).In order to illustrate the causes of these changes, observations of the film on a scanning electron microscope were made. Microcracks were observed in the film, which were mostly responsible for the per...

  4. Thickness dependency of sol-gel derived ZnO thin films on gas sensing behaviors

    Energy Technology Data Exchange (ETDEWEB)

    Kakati, Nitul; Jee, Seung Hyun; Kim, Su Hyun; Oh, Jun Young; Yoon, Young Soo, E-mail: yoonys@yonsei.ac.k

    2010-10-29

    ZnO thin films were fabricated by a sol-gel method using Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O as starting material in order to prepare an acetone gas sensor. A homogeneous and stable solution was prepared by dissolving the zinc acetate in a solution of ethanol and monoethanolamine. The sol-gel solution is coated on alumina substrates with various thicknesses by spin coating technique and heat treated to grow crystalline ZnO thin films. The effect of thickness on physical and electrical properties of as deposited ZnO thin films has been studied. The as deposited ZnO thin films were characterized by X-ray diffraction spectroscopy, field emission scanning electron microscopy and atomic force microscopy. The root mean square surface roughness factors increase with thickness of the films and found 3.9, 6.6, 9.0, and 11.28 nm for 80-, 220-, 450- and 620-nm-thin films respectively. The activation energies of the films are calculated from the resistance temperature characteristics. The sensitivities of the ZnO films towards the acetone gas were determined at an operating temperature of 200 {sup o}C. The sensitivity towards acetone vapor is strongly depending on surface morphology of the ZnO thin films.

  5. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  6. Terahertz paintmeter for noncontact monitoring of thickness and drying progress in paint film

    Science.gov (United States)

    Yasui, Takeshi; Yasuda, Takashi; Sawanaka, Ken-Ichi; Araki, Tsutomu

    2005-11-01

    We propose a paintmeter for noncontact and remote monitoring of the thickness and drying progress of a paint film based on the time-of-flight measurement of the echo signal of a terahertz (THz) electromagnetic pulse. The proposed method is effectively applied to two-dimensional mapping of the painting thickness distribution for single-layer and multilayer paint films. Furthermore, adequate parameters for the drying progress are extracted from the THz pulse-echo signal and effectively applied to monitor the wet-to-dry transformation. The THz paintmeter can be a powerful tool for quality control of the paint film on the in-process monitoring of car body painting.

  7. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Takeo, E-mail: t-ohno@wpi-aimr.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Samukawa, Seiji, E-mail: samukawa@ifs.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

  8. Optimizing diode thickness for thin-film solid state thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, John W.; Mejia, Israel; Quevedo-Lopez, Manuel A.; Gnade, Bruce [Department of Materials and Science, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, George R.; Allee, David [Flexible Display Center at Arizona State University, Tempe, Arizona 85284 (United States)

    2012-10-01

    In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  9. Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

    Energy Technology Data Exchange (ETDEWEB)

    Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

    2013-10-15

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

  10. Investigation of magnetic properties in thick CoFeB alloy films for controllable anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ke; Huang, Ya; Chen, Ruofei; Xu, Zhan [Huaqiao University, College of Information Science and Engineering, Xiamen City (China)

    2016-02-15

    CoFeB alloy material has attracted interest for its wide uses in magnetic memory devices and sensors. We investigate magnetic properties of thick Co{sub 40}Fe{sub 40}B{sub 20} films in the thickness range from 10 to 100 nm sandwiched by MgO and Ta layers. Strong in-plane uniaxial magnetic anisotropy is revealed in the as-deposited amorphous films by angular dependent magnetic measurements, and the growth-induced anisotropy is found to strongly depend on the film thickness. A fourfold cubic magnetic anisotropy develops with annealing, as a result of improved crystalline structure in films confirmed by X-ray diffraction measurements. The observed magnetic properties can be explained by the superposition of the uniaxial and additional cubic magnetic anisotropy, tuned by annealing temperature. (orig.)

  11. Investigation of magnetic properties in thick CoFeB alloy films for controllable anisotropy

    Science.gov (United States)

    Wang, Ke; Huang, Ya; Chen, Ruofei; Xu, Zhan

    2016-02-01

    CoFeB alloy material has attracted interest for its wide uses in magnetic memory devices and sensors. We investigate magnetic properties of thick Co40Fe40B20 films in the thickness range from 10 to 100 nm sandwiched by MgO and Ta layers. Strong in-plane uniaxial magnetic anisotropy is revealed in the as-deposited amorphous films by angular dependent magnetic measurements, and the growth-induced anisotropy is found to strongly depend on the film thickness. A fourfold cubic magnetic anisotropy develops with annealing, as a result of improved crystalline structure in films confirmed by X-ray diffraction measurements. The observed magnetic properties can be explained by the superposition of the uniaxial and additional cubic magnetic anisotropy, tuned by annealing temperature.

  12. Lift-off PMN-PT Thick Film for High Frequency Ultrasonic Biomicroscopy.

    Science.gov (United States)

    Zhu, Benpeng; Han, Jiangxue; Shi, Jing; Shung, K Krik; Wei, Q; Huang, Yuhong; Kosec, M; Zhou, Qifa

    2010-10-01

    Piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film with a thickness of approximately 12 µm has been deposited on the platinum buffered Si substrate via a sol-gel composite method. The separation of the film from the substrate was achieved using a wet chemical method. The lifted-off PMN-35PT thick film exhibited good dielectric and ferroelectric properties. At 1 kHz, the dielectric constant and the dielectric loss were 3,326 and 0.037, respectively, while the remnant polarization was 30.0 µC/cm(2). A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 63.6% at 110 MHz.

  13. Influence of Thickness on Field Emission Characteristics of Nanometre Boron Nitride Thin Films

    Institute of Scientific and Technical Information of China (English)

    顾广瑞; 李英爱; 陶艳春; 何志; 李俊杰; 殷红; 李卫青; 赵永年

    2003-01-01

    Nanometre boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 240 μA/cm2 at an electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.

  14. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-01

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  15. Microstructure parameters and optical properties of cadmium ferrite thin films of variable thickness

    Science.gov (United States)

    Shaaban, E. R.

    2014-06-01

    CdFe2O4 thin films of different thicknesses were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size, and microstrain were calculated. It is observed that both the crystallite size increases and microstrain increase with increasing with the film thickness. The fundamental optical parameters like absorption coefficient and optical band gap are calculated in the strong absorption region of transmittance and reflectance spectrum. The refractive indices have been evaluated in terms of the envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index can be extrapolated by the Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. The refractive index, n, increases on increasing the film thickness up to 733 nm and the variation of n with higher thickness lies within the experimental errors.

  16. Effect of withdrawal speed on film thickness and hexagonal pore-array dimensions of SBA-15 mesoporous silica thin film.

    Science.gov (United States)

    Hwang, Junho; Shoji, Naoko; Endo, Akira; Daiguji, Hirofumi

    2014-12-30

    Two-dimensional hexagonal mesoporous silica thin films of SBA-15 were synthesized on Si substrates via dip-coating using an evaporation-induced self-assembly process. The effect of the withdrawal speed on the thicknesses, one-dimensional pore alignments, and two-dimensional hexagonal pore arrays of the films was elucidated. Detailed analyses of FE-SEM and TEM images and XRD and XRR patterns of the synthesized thin films clarified that the pore sizes, interplanar spacings, and film thicknesses depend on the withdrawal speed. Furthermore, the same films were synthesized on Si substrates with microtrenches. The local flow of coating solutions around microtrenches affects the pore direction as well as the film thickness. In order to form well-ordered mesoporous silica thin films with large surface areas, it is important to control the synthetic conditions such as the local flow of the coating solutions as well as the physicochemical properties of the silica precursor solutions or template molecules.

  17. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.

  18. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    WANG XiShu; LI Ying; MENG XiangKang

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface.However,the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size,interface and stress state on the failure behavior of thin film-substrate structure.Based on the scanning electron microscope(SEM)in-situ investigation on the failure models of the Cu thin film-substrata structure and the nano scratched testing results,the failure stresses in different thicknesses of the Cu film-substrate were characterized,which were compared and confirmed by other methods,such as Stoney formula and other empiric equations.These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods.The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film.Therefore,the novel estimating method of failure stress assists people to understand the critical interracial strength and to set up the failure criterion of thin film-substrate structure.

  19. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Renguo [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Zhang, Hedong, E-mail: zhang@is.nagoya-u.ac.jp [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Komada, Suguru [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mitsuya, Yasunaga [Nagoya Industrial Science Research Institute, Noa Yotsuya Building 2F, 1-13, Yotsuya-Douri, Chikusa-ku, Nagoya 464-0819 (Japan); Fukuzawa, Kenji; Itoh, Shintaro [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2014-11-30

    Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

  20. Equivalent-Circuit Model for the Thickness-Shear Mode Resonator with a Viscoelastic Film Near Film Resonance

    Energy Technology Data Exchange (ETDEWEB)

    BANDEY, HELEN L.; BROWN, MARK J.; CERNOSEK, RICHARD W.; HILLMAN, A. ROBERT; MARTIN, STEPHEN J.

    1999-09-16

    We derive a lumped-element, equivalent-circuit model for the thickness shear mode (TSM) resonator with a viscoelastic film. This modified Butterworth-Van Dyke model includes in the motional branch a series LCR resonator, representing the quartz resonance, and a parallel LCR resonator, representing the film resonance. This model is valid in the vicinity of film resonance, which occurs when the acoustic phase shift across the film is an odd multiple of {pi}/2 radians. This model predicts accurately the frequency changes and damping that arise at resonance and is a reasonable approximation away from resonance. The elements of the model are explicitly related to film properties and can be interpreted in terms of elastic energy storage and viscous power dissipation. The model leads to a simple graphical interpretation of the coupling between the quartz and film resonances and facilitates understanding of the resulting responses. These responses are compared with predictions from the transmission-line and the Sauerbrey models.

  1. Impact of film thickness on the morphology of mesoporous carbon films using organic-organic self-assembly.

    Science.gov (United States)

    Vogt, Bryan D; Chavez, Vicki L; Dai, Mingzhi; Arreola, M Regina Croda; Song, Lingyan; Feng, Dan; Zhao, Dongyuan; Perera, Ginusha M; Stein, Gila E

    2011-05-03

    Mesoporous polymer and carbon thin films are prepared by the organic-organic self-assembly of an oligomeric phenolic resin with an amphiphilic triblock copolymer template, Pluronic F127. The ratio of resin to template is selected such that a body-centered cubic (Im3m) mesostructure is formed in the bulk. However, well-ordered mesoporous films are not always obtained for thin films (body-centered cubic symmetry with a preferential orientation of the closest-packed (110) plane parallel to the substrate. Film thickness and initial composition of the carbonizable precursors in the template are critical factors in determining the morphology of mesoporous carbon films. These results provide insight into why difficulties have been reported in producing ultrathin ordered mesoporous carbon films using cooperative organic-organic self-assembly.

  2. Humidity sensing properties of WO{sub 3} thick film resistor prepared by screen printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Garde, Arun S, E-mail: arungarde@yahoo.co.in

    2014-12-25

    Highlights: • Polycrystalline WO{sub 3} Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm{sup −1} shows stretching vibrations attributed to W-OH of adsorbed H{sub 2}O. • Absorption peaks in the range 879–650 cm{sup −1} are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO{sub 3} thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm{sup −1} clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm{sup −1} are attributed to the stretching W-O-W bonds (i.e. ν [W-O{sub inter}-W]). The peak located at 983 cm{sup −1} belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO{sub 3} thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO{sub 3} film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO{sub 3} film sensors have been evaluated.

  3. Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mene, Ravindra U. [PDEA' s, Annasaheb Waghire College of Science, Arts and Commerce, Otur 412409, M.S. (India); School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mohite, K.C. [Haribhai. V. Desai College, Pune 411002, M.S. (India); Khairnar, Rajendra S., E-mail: rskhairnarsps@gmail.com [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India)

    2014-02-01

    Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO{sub 2} gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp.

  4. Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

    Directory of Open Access Journals (Sweden)

    N. Zhang

    2015-04-01

    Full Text Available A series of iron based Fe-Te-Se superconductor thin films depositing on 0.7wt% Nb-doped SrTiO3 at substrate temperatures in the 250°C -450°C range by pulsed laser ablation of a constituents well defined precursor FeTe0.55Se0.55 target sample. We study the possible growth mechanism and its influence on the superconductor properties. Experimental results indicate the superconductive and non-superconductive properties are modulated only by the thickness of the thin films through the temperature range. The films appear as superconductor whenever the thickness is above a critical value ∼30nm and comes to be non-superconductor below this value. Relative ratios of Fe to (Te+Se in the films retained Fe/(Te+Se1 for non-superconductor no matter what the film growth temperature was. The effect of film growth temperature takes only the role of modulating the ratio of Te/Se and improving crystallinity of the systems. According to the experimental results we propose a sandglass film growth mechanism in which the interfacial effect evokes to form a Fe rich area at the interface and Se or Te starts off a consecutive filling up process of chalcogenide elements defect sides, the process is significant before the film thickness reaches at ∼30nm.

  5. Effect of Nanoscale Ag Film Thickness on the Electrical and Optical Properties of Transparent IZTO/Ag/IZTO Multilayer Films Deposited on Glass Substrates.

    Science.gov (United States)

    Oh, Dohyun; Lee, Nam Hyun; Cho, Woon-Jo; Kim, Tae Whan

    2015-07-01

    The effect of nanoscale Ag film thickness on the electrical and optical properties in transparent conducting oxide films consisting of an IZTO/Ag/IZTO multilayer were investigated. The homoge- neous morphologies of the Ag films sandwiched between the IZTO films affected the optical and electrical properties of the IZTO/Ag/IZTO multilayer films. The transmittance and resistivity of the IZTO/Ag/IZTO multilayer films decreased with increasing Ag film thickness. The resistivities of the IZTO/Ag/IZTO multilayer films grown on glass substrates were decreased by using an Ag thin inter- layer in comparison with that of the IZTO single layer.

  6. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  7. Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouderbala, M.; Hamzaoui, S. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria); Amrani, B. [Department of Physics, Centre Universitaire de Mascara, Mascara 29000 (Algeria)], E-mail: abouhalouane@yahoo.fr; Reshak, Ali H. [Institute of Physical Biology-South Bohemia University, Institute of System Biology and Ecology-Academy of Sciences, Nove Hrady 37333 (Czech Republic); Adnane, M.; Sahraoui, T.; Zerdali, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)

    2008-09-01

    Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5x10{sup -3} {omega} cm and the mobility increased from 2 to 37 cm{sup 2} V{sup -1} s{sup -1} when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10{sup 20} cm{sup -3}. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 {mu}m.

  8. Thick barium ferrite films use for passive isolators

    Energy Technology Data Exchange (ETDEWEB)

    Capraro, Stephane; Chatelon, Jean Pierre; Rouiller, Thomas; Rousseau, Jean Jacques [DIOM, University of Saint-Etienne, 23 rue Michelon, 42023 Saint-Etienne cedex (France); Berre, Martine Le; Barbier, Daniel [LPM, UMR 5511, INSA Lyon, 7 av. Jean Capelle, 69621 Villeurbanne cedex (France); Joisten, Helene [CEA-LETI, 17 rue des martyrs, 38041 Grenoble cedex (France)

    2004-12-01

    Ferrites have magnetic properties suitable for electronic applications, especially in the microwave range (circulators and isolators). Hexagonal ferrite, such as barium ferrite, are of great interest for microwave device applications because of their large resistivity and high permeability at high frequencies. BaM films are deposited under optimized conditions by RF magnetron sputtering on alumina substrates. In order to crystallize the films that are amorphous after deposition, a post deposition annealing at 800 C is implemented. All samples present a good crystallization, a smooth surface and a good in-depth uniformity. The magnetic properties of BaM films show an optimized coercive force and saturation magnetization of 330 kA/m and 500 mT respectively. These values are close to that of the bulk BaM. Isolators are then realized and measured by a vector network analyzer and a probing system. Results on transmission coefficients show a non reciprocal effect, which reaches 8.3 dB/cm at 50 GHz. This proves that such a component behaves like an isolator in the 50 GHz band. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Unusual Contact-Line Dynamics of Thick Films and Drops

    Science.gov (United States)

    Veretennikov, Igor; Agarwal, Abhishek; Indeikina, Alexandra; Chang, Hsueh-Chia

    1999-01-01

    We report several novel phenomena In contact-line and fingering dynamics of macroscopic spinning drops and gravity-driven films with dimensions larger than the capillary length. It is shown through experimental and theoretical analysis that such macroscopic films can exhibit various interfacial shapes, including multi valued ones, near the contact line due to a balance between the external body forces with capillarity. This rich variety of front shapes couples with the usual capillary, viscous, and intermolecular forces at the contact line to produce a rich and unexpected spectrum of contact-line dynamics. A single finger develops when part of the front becomes multivalued on a partially wetting macroscopic spinning drop in contrast to a different mechanism for microscopic drops of completely wetting fluids. Contrary to general expectation, we observe that, at high viscosity and low frequencies of rotation, the speed of a glycerine finger increases with increasing viscosity. Completely wetting Dow Corning 200 Fluid spreads faster over a dry inclined plane than a prewetted one. The presence of a thin prewetted film suppresses fingering both for gravity-driven flow and for spin coating. We analyze some of these unique phenomena in detail and offer qualitative physical explanations for the others.

  10. Critical thickness for ferromagnetism in insulating LaMnO3 films

    Science.gov (United States)

    Renshaw Wang, X.; Poccia, N.; Leusink, D. P.; Paudel, Tura R.; Tsymbal, E. Y.; Li, C. J.; Lv, W. M.; Venkatesan, T.; Ariando, Ariando; Hilgenkamp, H.

    2014-03-01

    The interplay between exchange interactions, interfacial charges, and confinement effects controls the electronic, magnetic, and transport properties of complex oxide thin films. Here we report the emergence of ferromagnetism in insulating LaMnO3 thin films grown on SrTiO3 substrates beyond a critical thickness. LaMnO3 (001) films are deposited by a pulsed laser deposition technique with thicknesses varying from 1 unit cell to 24 unit cells. The position dependent local magnetization is then mapped with micrometer resolution using scanning superconducting quantum interference device microscopy. We find that the magnetic ground state switches from non-ferromagnetic to ferromagnetic within a change of one unit cell above the critical thickness of 5 unit cells with characteristic domain size of about 20 μm. Further increase of film thickness up to 24 unit cells leads to reduction of the domain size to about 10 μm. The critical thickness is qualitatively explained in terms of the charge transfer in polar LaMnO3 (001) thin films based on results of additional experimental data, density-functional calculations, and the electrostatic modeling.

  11. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  12. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    Science.gov (United States)

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

    2017-10-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors.

  13. WS{sub 2} nanotube formation by sulphurization: Effect of precursor tungsten film thickness and stress

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Sheung Mei; Wong, Hon Fai; Wong, Wang Cheung; Tan, Choon Kiat; Choi, Sin Yuk; Mak, Chee Leung; Li, Gui Jun [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Dong, Qing Chen [MOE Key Laboratory for Interface Science and Engineering in Advanced Materials and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan 030024 (China); Leung, Chi Wah, E-mail: dennis.leung@polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)

    2016-09-15

    Transition metal dichalcogenides can exhibit as 2-dimensional layers, 1-dimensional nanotubes or 0-dimensional quantum dot structures. In general, dichalcogenide nanotubes are grown under stringent conditions, using high growth temperatures with tedious processes. Here, we report the controlled formation of tungsten disulphide (WS{sub 2}) nanostructures by manipulating the precursor film thickness, followed by a direct sulphurization process. WS{sub 2} nanotubes were formed by ultra-thin tungsten precursor films, while particle-like WS{sub 2} were obtained from thicker tungsten films under identical sulphurization conditions. To elucidate the origin of WS{sub 2} nanostructure formation, micron-sized tungsten film tracks were prepared, and such patterned films were found to suppress the growth of WS{sub 2} nanotubes. We attribute the suppression of nanotube formation to the relieving of film stress in patterned precursor films. - Highlights: • WS{sub 2} were obtained by sulphurization of sputtered tungsten films on Si substrates. • Resultant WS{sub 2} nanostructure morphology was dependent on precursor film thickness. • Patterning into micro-size W tracks suppressed the formation of nanotubes. • Stress relaxation was attributed as controlling factor for WS{sub 2} structure formation.

  14. Microdomain orientation dependence on thickness in thin films of cylinder-forming PS-b-PMMA.

    Science.gov (United States)

    Zucchi, I A; Poliani, E; Perego, M

    2010-05-07

    The self-assembly of block-copolymer thin films in periodic nanostructures has received considerable attention during the last decade due to their potential applications in nanofabrication and nanolithography. We followed the morphologies developed in thin films of a cylinder-forming diblock copolymer polystyrene-b-poly(methylmethacrylate) ((PS-b-PMMA), PS 46.1 kg mol( - 1), PMMA 21.0 kg mol( - 1), lattice spacing L(0) = 36 nm), as a function of the film thickness (t), analyzing the effect of thickness commensurability on domain orientation in respect to the substrate. The study was circumscribed to the unexplored range of thickness below L(0). Two thickness windows with perpendicular orientation of the PMMA domains were identified: a well-known window at t approximately L(0) and a new window at t approximately L(0)/2. A half-parallel cylinder morphology was observed for [Formula: see text] with a progressive change in morphology [Formula: see text] when thickness increases from L(0)/2 to L(0). This experimental evidence provides new insights on the mechanism of block copolymers self-organization and indicates the possibility to tune the thickness of the nanostructured polymeric film below L(0), allowing the fabrication of ultrathin soft masks for advanced lithographic processes.

  15. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  16. Terahertz ultrathin film thickness sensor below λ/90 based on metamaterial.

    Science.gov (United States)

    Chen, Meng; Fan, Fei; Shen, Si; Wang, Xianghui; Chang, Shengjiang

    2016-08-10

    The film thickness sensing based on metamaterial is investigated in the terahertz (THz) region. We fabricated the metamaterial sensor, and demonstrated its resonance by using the THz time-domain spectroscopy system. The results show that the resonant dip redshifts as the film thickness increases, which achieves reliable film sensing in the THz band. Its sensitivity is larger than 9.4 GHz/μm with a film thinner than λ/90. Meanwhile, the sensing mechanism is revealed by the simulation of near-field resonance distribution, which shows that the resonant intensity is stronger when the field is closer to the interface between the metamaterial surface and polyvinyl alcohol film. Therefore, the nonlinear type of the sensing sensitivity in our experiment can be well explained, and a higher sensitive sensing can be obtained when the film thickness is smaller. This simple and flexible method can realize the ultrathin film sensing in the THz region, and has application potential in the real-time monitoring of sample quality.

  17. The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

    CERN Document Server

    Li, Jing; Wu, Suntao

    2007-01-01

    Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\\mu$m-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1$\\mu$m was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460 degrees C, and ...

  18. Temperature effects on the mechanical behaviour of PZT 95/5

    Science.gov (United States)

    Khan, A. S.; Balzer, J. E.; Wilgeroth, J. M.; Proud, W. G.

    2014-05-01

    This research is to develop a better understanding of the piezoelectric ceramic lead zirconate titanate (PZT) 95/5 with varying temperatures, porosities and strain rates. Here, unpoled PZT samples of two different porosities were subjected to a range of compression rates, using quasi-static loading equipment, drop-weight towers and Split Hopkinson Pressure Bars (SHPBs). Varying temperatures were achieved using purpose-made environmental chambers. The resulting stress-strain relationships are compared. The samples were square tiles, 7.5 × 7.5 mm and 3 mm thickness. The density of the standard PZT used here was 7.75 g cm-3 (henceforth described as PZT), whilst the density of the higher porosity PZT was 7.38 g cm-3 (henceforth described as PPZT). This research is part of a wider study.

  19. Study of $\\beta$-phase development in spin-coated PVDF thick films

    Indian Academy of Sciences (India)

    BHOOPESH MAHALE; DHANANJAY BODAS; S A GANGAL

    2017-06-01

    A study was conducted to ascertain the effect of variation in spin speed and baking temperature on $\\beta$-phase content in the spin-coated poly(vinylidene fluoride) (PVDF) thick films ($\\sim$4−25 $\\mu$m). Development of $\\beta$-phase is dependent on film stretching and crystallization temperature. Therefore, to study the development of $\\beta$-phase in films, stretching is achieved by spinning and crystallization temperature is adjusted by means of baking. PVDF films are characterized using Fourier transform infrared spectroscopy, X-ray diffraction, differential scanning calorimetry, and scanning electronmicroscopy. It is observed that crystallization temperature lower than 60$^{\\circ}$C and increase in spin speed increases the $\\beta$-phasecontent in PVDF films. Crystallization temperature above 60$^{\\circ}$C reduces $\\beta$-phase content and increases α-phase content. It was also observed that viscosity of the PVDF solution affects the β-phase development in films at a particular spin speed.

  20. Bio-interfaces--interaction of PLL/HA thick films with nanoparticles and microcapsules.

    Science.gov (United States)

    Skirtach, Andre G; Volodkin, Dmitry V; Möhwald, Helmuth

    2010-03-15

    The interaction of biocompatible, exponentially grown films composed of poly-L-lysine (PLL) and hyaluronic acid (HA) polymers with gold nanoparticles and microcapsules is studied. Both aggregated and non-aggregated nanoparticle states are achieved; desorption of PLL accounts for aggregation of nanoparticles. The presence of aggregates of gold nanoparticles on films enables remote activation by near-infrared irradiation due to local, nanometer confined heating. Thermally shrunk microcapsules, which are remarkably monodisperse upon preparation but gain polydispersity after months of storage, are also adsorbed onto films. PLL polymers desorbed from films interact with microcapsules introducing a charge imbalance which leads to an increase of the microcapsule size, thus films amplify this effect. Multifunctional, biocompatible, thick gel films with remote activation and release capabilities are targeted for cell cultures in biology and tissue engineering in medicine.

  1. Adsorbed films of three-patch colloids: Continuous and discontinuous transitions between thick and thin films

    Science.gov (United States)

    Dias, C. S.; Araújo, N. A. M.; Telo da Gama, M. M.

    2014-09-01

    We investigate numerically the role of spatial arrangement of the patches on the irreversible adsorption of patchy colloids on a substrate. We consider spherical three-patch colloids and study the dependence of the kinetics on the opening angle between patches. We show that growth is suppressed below and above minimum and maximum opening angles, revealing two absorbing phase transitions between thick and thin film regimes. While the transition at the minimum angle is continuous, in the directed percolation class, that at the maximum angle is clearly discontinuous. For intermediate values of the opening angle, a rough colloidal network in the Kardar-Parisi-Zhang universality class grows indefinitely. The nature of the transitions was analyzed in detail by considering bond flexibility, defined as the dispersion of the angle between the bond and the center of the patch. For the range of flexibilities considered we always observe two phase transitions. However, the range of opening angles where growth is sustained increases with flexibility. At a tricritical flexibility, the discontinuous transition becomes continuous. The practical implications of our findings and the relation to other nonequilibrium transitions are discussed.

  2. Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

    Science.gov (United States)

    Gifford, Kenneth Douglas

    Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

  3. Critical heat flux enhancement regarding to the thickness of graphene films under pool boiling

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Man; Park, Hyun Sun [Pohang Univ. of Science and Technology, Pohang (Korea, Republic of); Park, Youngjae; Kim, Hyungdae [Kyung Hee Univ., Yongin (Korea, Republic of); Kim, Dong Eok [Kyungpook Nat. Univ., Sangju (Korea, Republic of); Kim, Moo Hwan [Korea Inst. of Nuclear Safety, Daejeon (Korea, Republic of); Ahn, Ho Seon [Incheon Nat. Univ., Incheon (Korea, Republic of)

    2014-05-15

    The large thermal conductivity of the graphene films inhibits the formation of hot spots, thereby increasing the CHF. An infrared high-speed visualization showed graphene effect on boiling characteristics during operation. The graphene-coated heater showed an increase in BHT and CHF. As the thickness of the graphene films increased, the CHF also increased up to an asymptotic limit when the graphene layer was approximately 150 nm thick. The increased BHT was explained by the slight decrease in the wettability and the folded edges of the RGO flakes, which led to a decrease in the diameter of the departing bubbles, a larger bubble generation frequency, and an increase in the areal density of the bubble nucleation sites. The increase in the CHF was explained by considering the thermal activity of the graphene films, and the dependence thereof on the thickness and thermal properties of the layer, which was calculated based on high-speed IR visualization data.

  4. (100)-Textured KNN-based thick film with enhanced piezoelectric property for intravascular ultrasound imaging

    Science.gov (United States)

    Zhu, Benpeng; Zhang, Zhiqiang; Ma, Teng; Yang, Xiaofei; Li, Yongxiang; Shung, K. Kirk; Zhou, Qifa

    2015-04-01

    Using tape-casting technology, 35 μm free-standing (100)-textured Li doped KNN (KNLN) thick film was prepared by employing NaNbO3 (NN) as template. It exhibited similar piezoelectric behavior to lead containing materials: a longitudinal piezoelectric coefficient (d33) of ˜150 pm/V and an electromechanical coupling coefficient (kt) of 0.44. Based on this thick film, a 52 MHz side-looking miniature transducer with a bandwidth of 61.5% at -6 dB was built for Intravascular ultrasound (IVUS) imaging. In comparison with 40 MHz PMN-PT single crystal transducer, the rabbit aorta image had better resolution and higher noise-to-signal ratio, indicating that lead-free (100)-textured KNLN thick film may be suitable for IVUS (>50 MHz) imaging.

  5. Thickness-dependent magnetic properties of Ce{sub 9}Fe{sub 91} films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xueyun; Wang, Dianyuan; Yu, Jianmin [Faculty of Science, Jiujiang University, Jiujiang City, Jiangxi Province (China); Wang, Zhenkun; Ge, Shihui [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University (China); Yao, Dongsheng [Tianjin Key Laboratory of Low-Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University (China)

    2014-12-01

    Ce{sub 9}Fe{sub 91} films with different thickness were fabricated by a rf magnetron sputtering method. The critical thickness t{sub c} for spin reorientation transition has been determined to be approximately 90 nm using the stripe domain model and magnetic force microscope. Above t{sub c}, the films exhibit Bloch stripe domain structure and a superhigh resonance frequency at 6 GHz is found for the parallel stripe configuration. However, below t{sub c}, the films possess an in-plane uniaxial anisotropy caused by order interface tension between the film and substrate, and the resonance frequency breaks through the Snoek limit. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Thick growing multilayer nanobrick wall thin films: super gas barrier with very few layers.

    Science.gov (United States)

    Guin, Tyler; Krecker, Michelle; Hagen, David Austin; Grunlan, Jaime C

    2014-06-24

    Recent work with multilayer nanocoatings composed of polyelectrolytes and clay has demonstrated the ability to prepare super gas barrier layers from water that rival inorganic CVD-based films (e.g., SiOx). In an effort to reduce the number of layers required to achieve a very low oxygen transmission rate (OTR (layer-by-layer (LbL) assembly. Buffering the chitosan solution and its rinse with 50 mM Trizma base increased the thickness of these films by an order of magnitude. The OTR of a 1.6-μm-thick, six-bilayer film was 0.009 cc/m(2)·day·atm, making this the best gas barrier reported for such a small number of layers. This simple modification to the LbL process could likely be applied more universally to produce films with the desired properties much more quickly.

  7. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    Energy Technology Data Exchange (ETDEWEB)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

    2011-04-01

    Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

  8. Thick and hard anodized aluminum film with large pores for surface composites

    Institute of Scientific and Technical Information of China (English)

    WANG Hui; WANG Hao-wei

    2004-01-01

    Al-base surface self-lubricating composites need thick and hard alumina membranes with large pores to add lubricants easily. This kind of porous alumina layer was fabricated in additive-containing, phosphoric acid-based solution. The effects of additive containing organic carboxylic acid and Ce salt on the properties of the oxide film and mechanism were investigated in detail with SEM and EDAX analyses. The results show that the pore diameter is about 100 nm, the film thickness increases by 4 -5 times, and the Vickers hardness improves by about 50% through adding some amount of organic carboxylic acid and Ce salt. Such an improvement in properties is explained in terms of a lower film dissolving velocity and better film quality in compound solution.

  9. Interference-aided spectrum fitting method for accurately film thickness determination

    CERN Document Server

    Liu, Xingxing; Xia, Hui; Zhang, Xutao; Ji, Ruonan; Li, Tianxin; Lu, Wei

    2016-01-01

    A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its accuracy is far better than traditional methods. This determination method is verified by experiments and the determination limit is at least 3.5 nm compared with the results of AFM. Furthermore, double-interference-aided spectra fitting method is proposed to reduce the requirements of determination instruments, which allow one to determine the film thickness with a low precision common spectrometer and largely lower the cost. It is a very high precision determination method for on-site and in-situ applications, especially for ultra-thin films.

  10. Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O3/Pb(Zr0.65Ti0.35)O3 artificial superlattice thin films

    Science.gov (United States)

    Yamada, Tomoaki; Ebihara, Youhei; Kiguchi, Takanori; Sakata, Osami; Morioka, Hitoshi; Shimizu, Takao; Funakubo, Hiroshi; Konno, Toyohiko J.; Yoshino, Masahito; Nagasaki, Takanori

    2016-10-01

    Artificial superlattice thin films consisting of two different compositions of Pb(Zr,Ti)O3 (PZT), which are in tetragonal and rhombohedral phases at room temperature in the bulk state, were grown on (111) c SrRuO3/(111)SrTiO3 by pulsed laser deposition. Fairly perfect periodicity with sharp interfaces was observed by X-ray diffraction and scanning transmission electron microscopy. It was found that the film with each layer of 5 nm thickness had a single-domain structure for both PZT layers, which would arise from the strong mechanical and electrical coupling between PZT layers. The fabricated superlattice thin films showed saturated P-E hysteresis curves. Larger electromechanical response was observed in the films with smaller layer thickness.

  11. Fabrication and characterization of ternary compound PMnN-PZT thin films on silicon substrates%硅基三元系PMnN—PZT铁电薄膜制备与研究

    Institute of Scientific and Technical Information of China (English)

    张涛; 张淑仪; 李敏; 周胜男; 孙斌

    2012-01-01

    利用磁控溅射方法在单晶Si基底上沉积三元系铁电薄膜6%PMnN-94%5PZT(6%Pb(Mn1/3,Nb2/3)O3—94%Pb(Zr0.52,Ti0.48)O3),采用淬火方法对薄膜进行处理,以促进薄膜钙钛矿结构形成。同时,在相同条件下制备非掺杂PZT(52/48)薄膜以对比薄膜掺杂效果。运用X射线衍射(XRD)技术分析薄膜晶向及晶体结构,运用SawyerTower电路测试薄膜铁电性能,运用激光测振仪测试薄膜的压电系数。实验结果表明,所沉积薄膜为多晶钙钛矿结构铁电薄膜,薄膜铁电剩余极化Pr=23.7μC/cm2,饱和极化Ps=40μC/cm2,矫顽场电压2Ec=139kV/cm,横向压电系数e11=-13.2C/m2,薄膜的铁电及压电性能优良。%The ternary compound ferroelectric thin films, 6% Pb ( Mnl/3 , Nb2/3 ) O3-94 % Pb (Zr0.52, Ti0.48 ) 03, were deposited on the silicon substrates by the magnetron sputtering method, and the quench method was adopted for the post heat treatment for the perovskite phase. Besides, the non-doped PZT(52/48) thin films were also fab- ricated for comparisons with the same sputtering method. The X-ray diffraction was used to characterize the crystal structures of thin films, and the Sawyer Tower circuit was used to measure the ferroelectricity, and the laser vibration measurement system was used to measure the transverse piezoelectric coefficient of thin films. The results show that the PMnN-PZT thin films own perovskite structures, and the remnant polarization Pr = 23. 7μC/cm2 , the saturation polarization Ps=40μC/cm2 and the coercive electric field 2Ec=139kV/cm, and the transverse piezoelectric coefficient c31 = - 13. 2C/m2 , which identifies that the PMnN-PZT thin films own excellent ferroeleetricity and piezoelectricity.

  12. Some limitations in applying classical EHD film-thickness formulae to a high-speed bearing

    Science.gov (United States)

    Coy, J. J.; Zaretsky, E. V.

    1980-01-01

    Elastohydrodynamic film thickness was measured for a 20 mm ball bearing using the capacitance technique. The bearing was thrust loaded to 90, 448, and 778 N. The corresponding maximum stresses on the inner race were 1.28, 2.09, and 2.45 GPa. Test speeds ranged from 400 to 14,000 rpm. Film thickness measurements were taken with four different lubricants: (1) synthetic paraffinic; (2) synthetic paraffinic with additives; (3) neopentylpolyol (tetra) ester; and (4) synthetic cycloaliphatic hydrocarbon traction fluid. The test bearing was mist lubricated. Test temperatures were 300, 338, and 393 K. The measured results were compared to theoretical predictions and are presented.

  13. Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

    Science.gov (United States)

    Cocca, T.; Dakesian, S.

    1977-01-01

    A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

  14. Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films

    Directory of Open Access Journals (Sweden)

    Anna Behler

    2013-12-01

    Full Text Available A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

  15. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  16. Piezoelectric sensors to monitor lubricant film thickness at piston-cylinder contacts in a fired engine

    OpenAIRE

    2013-01-01

    The contact between the piston ring and cylinder liner is the most important sealing interface in an automotive engine. Understanding the contact interactions and lubricant film formation at this interface is crucial for the development of fuel-efficient and low emission engines. This article outlines the development of an ultrasonic approach to enable non-invasive measurement of the lubricant film thickness formed between piston and cylinder wall of a fired engine. The sensor system consiste...

  17. MgB2 thick films with remarkable ductility on stainless steel substrate

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Cheng-gang; AN Ling; CHEN Li-ping; DING Li-li; ZHANG Kai-cheng; CHEN Chin-ping; XU Jun; FENG Qing-rong; GAN Zi-zhao

    2006-01-01

    We fabricated several superconducting MgB2 thick films on stainless steel (SS) substrates by using hybrid physical-chemical vapor deposition (HPCVD) technique.The thickness was in the 10 pμm to 20 pμm range,and the onset critical transition temperature Te (onset) and the width of the superconducting transition ( △ T) were about 37.8 and 1.2 K.They were dense and textured along (101) direction with high tenacity,despite the existence of a little amount of MgO and Mg.We bent the films at different degrees and studied the ductility and transport properties of these MgB2 thick films under applied force.The results demonstrated that the superconducting properties of these thick films,prepared by HPCVD,stay almost unaffected even with the films bent to a large degree with a curvature of 0.5 nun.This indicated that the superconducting wires or tapes of MgB2 with a core of SS had the advantages of avoiding rigidity and brittleness in industrial handling.The technique of HPCVD has,therefore,a high application potential.

  18. Thickness dependence of structural and optical properties of cadmium iodide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Centre of Nanotechnology, King AbdulAziz University, Jeddah (Saudi Arabia); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Ismail, Yasser A.M.; Aboraia, A.M. [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt); Shaaban, E.R., E-mail: esamramadan2008@yahoo.com [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt)

    2015-07-05

    Highlights: • Different thicknesses of CdI{sub 2} films were prepared. • Both crystallite size and microstrain of the films has been determined. • The room temperature reflectance and transmittance data are analyzed. • The refractive index and energy gap are determined. - Abstract: Structural and optical properties as a function of film thickness have been studied for the thermally evaporated cadmium iodide (CdI{sub 2}) films. According to XRD structure, the thickness of investigated films extends from 272 to 696 nm, showing hexagonal structure and good c-axis alignment normal to glass substrate plane. Both of crystallite size and lattice strain have been determined in terms of Voight method of the main peak. The optical constants, refractive index (n), and extinction coefficient (k) have been determined using envelope method. The optical absorption data indicates an allowed direct inter – band transition near the absorption edge with an optical energy gap that decreases continuously from 3.572 to 3.767 eV. Both of optical constants and energy gap show thickness dependence that can be explained in terms of structure parameters, crystallite size, and lattice strain.

  19. Ultrasonic oil-film thickness measurement: an angular spectrum approach to assess performance limits.

    Science.gov (United States)

    Zhang, Jie; Drinkwater, Bruce W; Dwyer-Joyce, Rob S

    2007-05-01

    The performance of ultrasonic oil-film thickness measurement in a ball bearing is quantified. A range of different viscosity oils (Shell T68, VG15, and VG5) are used to explore the lowest reflection coefficient and hence the thinnest oil-film thickness that the system can measure. The results show a minimum reflection coefficient of 0.07 for both oil VG15 and VG5 and 0.09 for oil T68 at 50 MHz. This corresponds to an oil-film thickness of 0.4 microm for T68 oil. An angular spectrum (or Fourier decomposition) approach is used to analyze the performance of this configuration. This models the interaction of component plane waves with the measurement system and quantifies the effect of the key parameters (transducer aperture, focal length, and center frequency). The simulation shows that for a focused transducer the reflection coefficient tends to a limiting value at small oil-film thickness. For the transducer used in this paper it is shown that the limiting reflection coefficient is 0.05 and the oil-film measurement errors increase as the reflection coefficient approaches this value. The implications for improved measurement systems are then discussed.

  20. Measurements of liquid film thickness, concentration, and temperature of aqueous urea solution by NIR absorption spectroscopy

    Science.gov (United States)

    Pan, R.; Jeffries, J. B.; Dreier, T.; Schulz, C.

    2016-01-01

    A multi-wavelength near-infrared (NIR) diode laser absorption sensor has been developed and demonstrated for real-time monitoring of the thickness, solute concentration, and temperature of thin films of urea-water solutions. The sensor monitors the transmittance of three near-infrared diode lasers through the thin liquid film. Film thickness, urea mass fraction, and liquid temperature were determined from measured transmittance ratios of suitable combinations of lasers. Available laser wavelengths were selected depending on the variation of the NIR absorption spectrum of the solution with temperature and solute concentration. The spectral database was measured by a Fourier transform infrared spectrometer in the range 5500-8000 cm-1 for urea solutions between 5 and 40 wt% and temperatures between 298 and 338 K. A prototype sensor was constructed, and the sensor concept was first validated with measurements using a calibration cell providing liquid layers of variable thickness (200-1500 µm), urea mass fraction (5-40 wt%) and temperature (298-318 K). Temporal variations of film thickness and urea concentration were captured during the constant-temperature evaporation of a liquid film deposited on an optically polished heated quartz flat.

  1. Effect of film thickness on NO2 gas sensing properties of sprayed orthorhombic nanocrystalline V2O5 thin films

    Science.gov (United States)

    Mane, A. A.; Moholkar, A. V.

    2017-09-01

    The nanocrystalline V2O5 thin films with different thicknesses have been grown onto the glass substrates using chemical spray pyrolysis (CSP) deposition method. The XRD study shows that the films exhibit an orthorhombic crystal structure. The narrow scan X-ray photoelectron spectrum of V-2p core level doublet gives the binding energy difference of 7.3 eV, indicating that the V5+ oxidation state of vanadium. The FE-SEM micrographs show the formation of nanorods-like morphology. The AFM micrographs show the high surface area to volume ratio of nanocrystalline V2O5 thin films. The optical study gives the band gap energy values of 2.41 eV, 2.44 eV, 2.47 eV and 2.38 eV for V2O5 thin films deposited with the thicknesses of 423 nm, 559 nm, 694 nm and 730 nm, respectively. The V2O5 film of thickness 559 nm shows the NO2 gas response of 41% for 100 ppm concentration at operating temperature of 200 °C with response and recovery times of 20 s and 150 s, respectively. Further, it shows the rapid response and reproducibility towards 10 ppm NO2 gas concentration at 200 °C. Finally, NO2 gas sensing mechanism based on chemisorption process is discussed.

  2. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  3. Smoothness improvement of micrometer- and submicrometer-thick nanocrystalline diamond films produced by MWPECVD

    Science.gov (United States)

    Cicala, G.; Magaletti, V.; Senesi, G. S.; Tamborra, M.

    2013-04-01

    Thick (around 3 μm) and thin (48-310 nm) nanocrystalline diamond (NCD) films have been produced from Ar-rich CH4/Ar/H2 (1/89/10 %) and H2-rich CH4/H2 (1/99 %) microwave plasmas, respectively. The deposition rate and the nucleation enhancement have been monitored in situ and in real time by pyrometric and laser reflectance interferometry for micrometer- and nanometer-thick films. For thick films, an improvement of the NCD films' smoothness has been obtained by a buffer layer between the films and the treated Si substrate. For thin films, a combinatorial approach, i.e., a treatment of the Si substrate in a suspension of mixed diamond powders of 250 nm and 40-60 μm, has been utilized. The present experimental results show that the buffer layer procedure allows good preservation of the surface of the treated Si substrate and the combinatorial approach promotes effectively the seeding of the Si surface.

  4. Image processing techniques for measuring non-uniform film thickness profiles

    Energy Technology Data Exchange (ETDEWEB)

    Nitta, S.V.; Liu, An-Hong; Plawsky, J.L.; Wayner, P.C. Jr. [Rensselaer Polytechnique Institute, Troy, NY (United States)

    1996-12-31

    The long term objective of this research program is to determine the fluid flow and drying characteristics of thin liquid/solid films using image processing techniques such as Image Analyzing Interferometry (IAI) and Image Scanning Ellipsometry (ISE). The primary purpose of this paper is to present experimental data on the effectiveness of IAI and ISE to measure nonuniform film thickness profiles. Steady-state, non-isothermal profiles of evaporating films were measured using IAI. Transient thickness profiles of a draining film were measured using ISE. The two techniques are then compared and contrasted. The ISE can be used to measure transient as well as steady-state profiles of films with thickness ranging from 1 nm to > 20 {mu}m, whereas IAI can be used to directly measure Steady-state and transient profiles of only films thicker than about 100 nm. An evaluation of the reflected intensity can be used to extend the use of the IAI below 100 nm.

  5. Thickness dependent phase transformation of magnetron-sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vishnoi, Ritu; Singhal, Rahul; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Laboratory, Department of Physics and Center of Nanotechnology (India)

    2011-09-15

    In this study, the influence of film thickness on the first-order martensite-austenite phase transformation of Ni-Mn-Sn ferromagnetic shape memory alloy thin films has been systematically investigated. Different thicknesses of the Ni-Mn-Sn films (from {approx}100 to 2,500 nm) were deposited by DC magnetron sputtering on Si (100) substrates at 550 Degree-Sign C. X-ray analysis reveals that all the films exhibit austenitic phase with the L2{sub 1} cubic crystal structure at room temperature. The grain size and crystallization extent increase with the increase in film thickness, but the films with thickness above {approx}1,400 nm show structural deterioration due to the formation of MnSn{sub 2} and Ni{sub 3}Sn{sub 4} precipitates. The improvement in the crystallinity of the film with thickness is attributed to the decrease in film-substrate interfacial strain resulting in preferred oriented growth of the films. Temperature-dependent magnetization measurements as well as electrical measurements demonstrate the complete absence of phase transformation for the film of thickness of {approx}120 nm. For thickness greater than 400 nm, film exhibits the structural transformation, and it occurs at higher temperature with better hysteresis as film thickness is increased up to {approx}1,400 nm, after which degradation of phase transformation phenomenon is observed. This degradation is attributed to the disorders present in the films at higher thicknesses. Film with thickness {approx}1,400 nm possesses the highest magnetization with the smallest thermal hysteresis among all the films and therefore best suited for the actuators based on first-order structural phase transformation. Nanoindentation measurements reveal that the higher values of hardness and elastic modulus of about 5.5 and 215.0 GPa obtained in film of 1,014 nm thickness can considerably improve the ductility of ferromagnetic shape memory alloys (FSMA) and their applicability for MEMS applications. The exchange bias

  6. Variation of structure and magnetic properties with thickness of thin Co59Fe26Ni15 films

    OpenAIRE

    Chechenin, NG; van Voorthuysen, EHD; De Hosson, JTM; Boerma, DO

    2005-01-01

    Variations of phase composition and magnetic properties of electrodeposited nanocrystalline Co-Fe-Ni films with film thickness in the range of 50-500 nm were analyzed. The samples were magnetically soft with coercivity in the range H-c = 2-20 Oe and uni axial magnetic anisotropy up to H-k = 20 Oe. It was found that H-c decreases and H-k increases with increasing film thickness. The BCC phase dominates at small film thickness up to about 80 nm and the FCC phase increases when the film growths ...

  7. Effect of Layer and Film Thickness and Temperature on the Mechanical Property of Micro- and Nano-Layered PC/PMMA Films Subjected to Thermal Aging

    Directory of Open Access Journals (Sweden)

    Ahmed Abdel-Mohti

    2015-04-01

    Full Text Available Multilayered polymer films with biomimicking, layered structures have unique microstructures and many potential applications. However, a major limitation of polymer films is the deterioration of mechanical properties in working environments. To facilitate the design and development of multilayered polymer films, the impact of thermal aging on the mechanical behavior of micro- and nano-layered polymer films has been investigated experimentally. The composition of the polymer films that have been studied is 50 vol% polycarbonate (PC and 50 vol% poly(methyl methacrylate (PMMA. The current study focuses on the effect of film and layer thickness and temperature on the mechanical properties of the materials subjected to thermal aging. To study the effect of film and layer thickness, films with the same thickness, but various layer thicknesses, and films with the same layer thickness, but various film thicknesses, were thermally aged at 100 °C in a constant temperature oven for up to six weeks. The results show that as the layer thickness decreases to 31 nm, the film has a higher stiffness and strength, and the trend of the mechanical properties is relatively stable over aging. The ductility of all of the films decreases with aging time. To study the effect of temperature, the films with 4,096 layers (31 nm thick for each layer were aged at 100 °C, 115 °C and 125 °C for up to four weeks. While the 100 °C aging results in a slight increase of the stiffness and strength of the films, the higher aging temperature caused a decrease of the stiffness and strength of the films. The ductility decreases with the aging time for all of the temperatures. The films become more brittle for higher aging temperatures.

  8. Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal-metalloid FeCoNbB/Si (100) alloy thin films

    Science.gov (United States)

    Gupta, Pooja; Tripathi, Yagyanidhi; Kumar, Dileep; Rai, S. K.; Gupta, Mukul; Reddy, V. R.; Svec, Peter

    2016-08-01

    The structure and magnetic properties of ion beam sputtered transition metal-metalloid FeCoNbB/Si(100) alloy thin film have been studied as a function of film thickness using complementary techniques of x-ray reflectivity (XRR), grazing incidence x-ray diffraction, and magneto optical Kerr effect. Thicknesses of the films range from ˜200 to 1500 Å. The coercivity of all the films ranges between 4 and 14 Oe, which suggests soft magnetic nature of FeCoNbB/Si thin films. Films with thickness up to 800 Å are amorphous in nature and are found to possess uniaxial magnetic anisotropy in the film plane, although no magnetic field was applied during deposition. The presence of the two fold symmetry in such amorphous thin films may be attributed to quenched-in stresses developed during deposition. Upon increasing the film thickness to ˜1200 Å and above, the structure of FeCoNbB films transforms from amorphous to partially nanocrystalline structure and has bcc-FeCo nanocrystalline phase dispersed in remaining amorphous matrix. The crystalline volume fraction (cvf) of the films is found to be proportional to the film thickness. Azimuthal angle dependence of remanence confirms the presence of in-plane four-fold anisotropy (FFA) in the crystalline film with cvf ˜75%. Synchrotron x-ray diffraction measurement using area detector suggests random orientation of crystallites and thus clearly establishes that FFA is not related to texture/cubic symmetry in such polycrystalline thin films. As supported by asymmetric Bragg diffraction measurements, the origin of FFA in such partially crystalline thin film is ascribed to the additional compressive stresses developed in the film upon crystallization. Results indicate that promising soft magnetic properties in such films can be optimized by controlling the film thickness. The revelation of controllable and tunable anisotropy suggests that FeCoNbB thin films can have potential application in electromagnetic applications.

  9. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    Science.gov (United States)

    Khan, M. A. Majeed; Khan, Wasi

    2016-08-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap ( E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  10. Three dimensional phase field study on the thickness effect of ferroelectric polymer thin film

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The electromechanical behavior of poly(vinylidene fluoride-trifluoroethylene)[P(VDF -TrFE)]ferroelectric thin film was investigated using the three dimensional(3D) phase-field method. Various energetic contributions,including elastic,electrostatic,and domain wall energy were taken into account in the variational functional of the phase field model.Evolution of the microscopic domain structures of P(VDF-TrFE) polymer film was simulated.Effects of the in-plane residual stress,the film thickness and externa...

  11. Giant magnetoelectric effects in ferrite - PZT multilayer composites

    Science.gov (United States)

    Srinivasan, G.; Rasmussen, E. T.

    2002-03-01

    Materials that respond to both electric and magnetic fields are said to be magnetoelectric (ME) and facilitate field conversion. One way in principle to accomplish strong ME effects is a composite of magnetostrictive and piezoelectric materials in which the coupling is mediated by mechanical deformation. This report is on the synthesis of novel multilayers of magnetostrictive nickel zinc ferrite (NZFO) and piezoelectric lead zirconate titanate (PZT) that show a giant ME effect and maximum field conversion efficiency [1]. Bilayers and multilayers were prepared from thick films obtained by tape casting. The ME voltage coefficient was measured as a function of sample and experimental parameters. The coefficient ranged from 30 to 1500 mV/cm Oe, depending on the sample composition, volume fraction, and field orientation. The transverse coupling is an order of magnitude stronger than the longitudinal coefficient. The ME coefficient is maximum at room temperature and increases with increasing frequency. Data on the dependence of ME coupling on volume fraction of the two phases and bias magnetic field are in excellent agreement with theoretical predictions. - work supported by a grant from the NSF (DMR-0072144) 1. G. Srinivasan, E. T. Rasmussen, J. Gallegos, R. Srinivasan, Yu. I. Bokhan, and V. M. Laletin, Phys. Rev. B 64, 214408 (2001).

  12. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  13. In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3 films grown on (100) Si substrates by metal organic chemical vapor deposition

    Science.gov (United States)

    Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2017-10-01

    In-plane orientation-controlled Pb(Zr x ,Ti1‑ x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39–0.65 were grown on (100) Si substrates by pulsed metal–organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0–100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

  14. Analysis of water film thickness on contact lens by reflectometry technique

    Science.gov (United States)

    Wang, Michael R.; Lu, Hui; Wang, Jianhua; Shen, Meixiao

    2011-03-01

    We report the use of optical reflectometry technique for evaluation of water film on contact lens. The water film can be measured through the spectral dependent reflectance evaluation, which is carried out by illuminating the contact lens with a white light and collecting the returning light with an optical fiber coupled to a spectrometer. Water film thinning process has been observed on different soft contact lenses and minimum measurable thickness is about 0.85 μm. The measurement is fast and accurate. The water film measurement can be valuable for contact lens design to improve its hydrophilic properties. The technique can be extended for the study of tear film dynamics in an eye.

  15. Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Rcfik Kayah; Mehmet Ari; Mustafa Oztas; Metin Bedir; Funda Aksoy

    2009-01-01

    InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500 ℃ with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction (XRD). It is found that the crystal structure of the InP films is polycrystailine hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.

  16. Thickness and optical constants calculation for chalcogenide-alkali metal Se80Te8(NaCl)12 thin film

    Science.gov (United States)

    Abd-Elrahman, M. I.; Abu-Sehly, A. A.; Bakier, Y. M.; Hafiz, M. M.

    2017-09-01

    Chalcogenide-alkali metal semiconducting thin films of four different thicknesses of Se80Te8(NaCl)12 are deposited from bulk by thermal evaporation technique. The crystallinity of the film improves with increasing of thickness as indicated by the recorded X-ray diffraction patterns. The transmission and reflection spectra are measured in the wavelength range of the incident photons from 250 to 2500 nm. The thickness and optical constants of the films are calculated based on Swanepeol method using the interference patterns appeared in the transmission spectra. It is found that the films have absorption mechanism which is an indirect allowed transition. The effect of the film thickness on the refractive index and the high-frequency dielectric constant are studied. With increasing the film thickness, both the absorption coefficient and high-frequency dielectric constant increase while the single-oscillator energy, optical band gap and extinction coefficient decrease.

  17. An experimental investigation of piezoelectric P(VDF-TrFE) thick film on flexible substrate as energy harvester

    Science.gov (United States)

    Khoon Keat, Chow; Swee Leong, Kok; Kok Tee, Lau

    2017-06-01

    This paper proposes an experimental inves tigation of energy harvester using poly(vinylidene fluoride-trifluoroethylene) or P(VDF-TrFE) thick-film on flexible substrate by using print screen and rod method. Polyester film being used as the substrate where a sandwiched layer of electrode-piezopolymer-electrode thick film is deposited on. The thick-film is then annealed at 100°C and polarized at 100 V for the film with a thickness of about 18µm, being inspected under EDX, FESEM and XRD. The fabricated energy harvester piezoelectric is able to generate a maximum output power of 4.36 µW at an externa l electrical load of 1 kΩ with a maximum peak-to-peak of about 3.0V when an impact free-fall force of 0.2N was applied on the thick-film.

  18. Dielectric relaxation analysis of Pb(Zr0.54,Ti0.46)O3 thin films: Electric field dependence

    Science.gov (United States)

    Ponchel, F.; Sama, N.; Rémiens, D.; Lasri, T.

    2014-12-01

    350 nm-thick Perovskite PbZr0.54Ti0.46O3 (PZT) thin films were deposited on Al2O3 substrates by sputtering with and without an additional 10-nm-thick TiOx buffer layer. X-ray diffraction patterns showed that in presence of TiOx buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for EDC = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.

  19. Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

    Energy Technology Data Exchange (ETDEWEB)

    Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr; Rémiens, D. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DOAE Department, University of Valenciennes et du Hainaut Cambresis, Le Mont Houy, 59313 Valenciennes Cedex 9 (France); Sama, N. [Institut National de la Recherche Scientifique - Energie Matériaux et Télécommunications (INRS-EMT), 10 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Lasri, T. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DHS Department, University of Lille1 Sciences and Technologies, 59652 Villeneuve d' Ascq Cedex (France)

    2014-12-28

    350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.

  20. Predicting the Mean Liquid Film Thickness and Profile along the Annular Length of a Uniformly Heated Channel at Dryout

    Directory of Open Access Journals (Sweden)

    V.Y. Agbodemegbe

    2011-03-01

    Full Text Available The objective of this study was to predict the mean liquid film thickness and profile at high shear stress using a mechanistic approach. Knowledge of the liquid film thickness and its variation with two-phase flow parameters is critical for the estimation of safety parameters in the annular flow regime. The mean liquid film thickness and profile were predicted by the PLIFT code designed in Fortran 95 programming language using the PLATO FTN95 compiler. The film thickness was predicted within the annular flow regime for a flow boiling quality ranging from 40 to 80 % at high interfacial shear stress. Results obtained for a laminar liquid film flow were dumped into an excel file when the ratio of the actual predicted film thickness to the critical liquid film thickness lied within the range of 0.9 to unity. The film thickness was observed to decrease towards the exit of the annular regime at high flow boiling qualities and void fractions. The observation confirmed the effect of evaporation in decreasing the film thickness as quality is increased towards the exit of the annular regime.

  1. Characteristics of a thick film ethanol gas sensor made of mechanically treated LaFeO3 powder

    Science.gov (United States)

    Suhendi, Endi; Witra, Hasanah, Lilik; Syarif, Dani Gustaman

    2017-05-01

    In this work, fabrication of LaFeO3 thick film ceramics for ethanol gas sensor made of mechanically treated (milling) powder was studied. The thick films were fabricated using screen printing technique from LaFeO3 powder treated by HEM (High Energy Milling). The films were baked at 800°C for one hour and analyzed using XRD and SEM. Sensitivity of the films was studied by measuring resistance of them at various temperatures in a chamber containing air with and without ethanol gas. Data of XRD showed that the thick film crystalizes in orthorombic structure with space group of Pn*a. SEM data showed that the films consisted of small grains with grain size of about 225 nm. According to the electrical data, the LaFeO3 thick films that produced in this work could be applied as ethanol gas with operating temperature of about 275°C.

  2. Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

    Science.gov (United States)

    Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

    2016-12-01

    In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

  3. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Jay; Harris, Tequila

    2010-05-20

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 {mu}m measurements can be recorded with less than {+-}5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  4. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...

  5. Boron film thickness determination to develop a low cost neutron using Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Raele, Marcus P.; Yoriyaz, Helio; Siqueira, Paulo de T.D.; Zahn, Guilherme S.; Genezini, Frederico A., E-mail: fredzini@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2015-07-01

    Neutron measurement is important for safety and security of workers at nuclear facilities. As neutron is an uncharged particle, for its detection is necessary to use a converter material that interacts with the neutron and produce a charged particle, which is easy to detect. One of the converter candidates is natural boron composed by about 20% of Boron-10, which capture a low energy neutron ejecting an energetic alpha particle and a lithium ion. A neutron detector can be developed applying a boron thin film over a silicon photodiode, which is charged particle sensitive. For this reason is important to determine the optimal film thickness. We have used an empirical solution for the boron film thickness evaluation; furthermore we developed, using Monte Carlo method (MCNP6), a model to simulate the alpha particles propagation through the detector. Our goal was to ensure the best production and transference of alpha particles to silicon region. The film thickness ranged between 0 to 5.5 μm, the neutron energy was also varied. The optimal thickness value will be used to develop a prototype of a low cost neutron detector. (author)

  6. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  7. Film Thickness Model for Grease-Lubricated Bearing Seals with an Axial Contacting Lip

    NARCIS (Netherlands)

    Baart, P.; van Zoelen, M.T.; Lugt, Pieter Martin

    2013-01-01

    A theoretical model is presented to predict the oil film thickness in an axial sealing contact based on grease properties and operating conditions. It is assumed that a small amount of grease will form an oil reservoir on the rotating part and slowly supply oil to the sealing contact. The oil bleed

  8. Effects of load system dynamics on the film thickness in EHL contacts during start up

    NARCIS (Netherlands)

    Popovici, G.; Venner, Cornelis H.; Lugt, P.M.; Lugt, Pieter Martin

    2004-01-01

    By means of numerical simulations the effects of the loading system on the contact dynamics of an EHL contact during start up have been studied. The work was initiated by experimental results obtained for the start up situation on a ball on disk apparatus in which strong film thickness oscillations

  9. Microstructural Studies of Ni-P Thick Film Resistor Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Barbara Holodnik

    1986-01-01

    Full Text Available Thick Ni-P films have been widely investigated at our Institute. This article tends to visualize by use of various microscopic methods how the growth and sintering of individual conducting grains, results in the formation of nickel dendrites responsible for the metallic character of electrical conduction.

  10. CO responses of sensors based on cerium oxide thick films prepared from clustered spherical nanoparticles.

    Science.gov (United States)

    Izu, Noriya; Matsubara, Ichiro; Itoh, Toshio; Akamatsu, Takafumi; Shin, Woosuck

    2013-03-08

    Various types of CO sensors based on cerium oxide (ceria) have been reported recently. It has also been reported that the response speed of CO sensors fabricated from porous ceria thick films comprising nanoparticles is extremely high. However, the response value of such sensors is not suitably high. In this study, we investigated methods of improving the response values of CO sensors based on ceria and prepared gas sensors from core-shell ceria polymer hybrid nanoparticles. These hybrid nanoparticles have been reported to have a unique structure: The core consists of a cluster of ceria crystallites several nanometers in size. We compared the characteristics of the sensors based on thick films prepared from core-shell nanoparticles with those of sensors based on thick films prepared from conventionally used precipitated nanoparticles. The sensors prepared from the core-shell nanoparticles exhibited a resistance that was ten times greater than that of the sensors prepared from the precipitated nanoparticles. The response values of the gas sensors based on the core-shell nanoparticles also was higher than that of the sensors based on the precipitated nanoparticles. Finally, improvements in sensor response were also noticed after the addition of Au nanoparticles to the thick films used to fabricate the two types of sensors.

  11. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.

    Science.gov (United States)

    Feng, Xiao; Feng, Yang; Wang, Jing; Ou, Yunbo; Hao, Zhenqi; Liu, Chang; Zhang, Zuocheng; Zhang, Liguo; Lin, Chaojing; Liao, Jian; Li, Yongqing; Wang, Li-Li; Ji, Shuai-Hua; Chen, Xi; Ma, Xucun; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Xue, Qi-Kun

    2016-08-01

    The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.

  12. Measurement of oil film thickness and friction force on a guide shoe bearing

    DEFF Research Database (Denmark)

    Vølund, Anders

    2002-01-01

    An experimental program was carried out in order to reveal oil film thickness, and friction force of the guide shoe bearing of a large two stroke marine diesel engine. The experiment was conducted on a full size engine located at the research facility at MAN B&W Diesel A/S. The experiment was con...

  13. Thickness dependence of the L{sub 2,3} branching ratio of Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aksoy, F. [Physics Department, University of Cukurova, 01330 Adana (Turkey); Physics Department, University of Nigde, 51100 Nigde (Turkey); Akguel, G. [Physics Department, University of Cukurova, 01330 Adana (Turkey); Ufuktepe, Y., E-mail: ufuk@cu.edu.t [Physics Department, University of Cukurova, 01330 Adana (Turkey); Nordlund, D. [Stanford Synchrotron Radiation Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

    2010-10-22

    We report the electronic structure of chromium (Cr) thin films depending on its thickness using two measures, total electron yield (TEY) and transmission yield mode. The Cr L edge X-ray absorption spectroscopy (XAS) spectrum shows strong thickness dependence with broader line widths observed for L{sub 2,3} edge peaks for thinner films. The white line ratio (L{sub 3}/L{sub 2}) was found to be 1.25 from the integrated area under each L{sub 3} and L{sub 2} peak and 1.36 from the ratio of the amplitudes of each L{sub 3} and L{sub 2} peak after the deconvolution. Additionally, we show that full-width at half-maximum (FWHM) at the L{sub 2} and L{sub 3} edges and the branching ratio of Cr change as a function of film thickness and these are discussed in detail. Using L{sub 2,3} resonance intensity variation as a function of film thickness we calculated the electron escape depth and X-ray attenuation length in Cr. Comparing our results with the literature, there was good agreement for the L{sub 3}-L{sub 2} ratio although the detailed shape can show additional solid state and atomic effects.

  14. Blue and green organic light-emitting devices with various film thicknesses for color tuning

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB)/aluminum(Ⅲ) bis(2-methyl-8-quinolinato)4 -phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.

  15. Effect of thickness-dependent microstructure on the out-of-plane hole mobility in poly(3-hexylthiophene) films.

    Science.gov (United States)

    Huang, Bingyuan; Glynos, Emmanouil; Frieberg, Bradley; Yang, Hengxi; Green, Peter F

    2012-10-24

    Regioregular poly(3-hexylthiophene) (RR-P3HT) is a widely used donor material for bulk heterojunction polymer solar cells. While much is known about the structure and properties of RR-P3HT films, important questions regarding hole mobilities in this material remain unresolved. Measurements of the out-of-plane hole mobilities, μ, of RR-P3HT films have been restricted to films in the thickness regime on the order of micrometers, beyond that generally used in solar cells, where the film thicknesses are typically 100 to 200 nm. Studies of in-plane carrier mobilities have been conducted in thinner films, in the thickness range 100-200 nm. However, the in-plane and out-of-plane hole mobilities in RR-P3HT can be significantly different. We show here that the out-of-plane hole mobilities in neat RR-P3HT films increase by an order of magnitude, from 10(-4) cm(2)/V·s, for a 80 nm thick film, to a value of 10(-3) cm(2)/V·s for films thicker than 700 nm. Through a combination of morphological characterization and simulations, we show that the thickness dependent mobilities are not only associated with the differences between the average morphologies of thick films and thin films, but specifically associated with changes in the local morphology of films as a function of distance from the interfaces.

  16. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Science.gov (United States)

    Mauvy, F.; Lenormand, P.; Lalanne, C.; Ansart, F.; Bassat, J. M.; Grenier, J. C.; Groupement de Recherches Cnrs "Pacte", Gdr 2985

    Yttria stabilized zirconia (YSZ, 8% Y 2O 3) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films.

  17. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Energy Technology Data Exchange (ETDEWEB)

    Mauvy, F.; Lalanne, C.; Bassat, J.M.; Grenier, J.C. [Institut de Chimie de la Matiere Condensee de Bordeaux ICMCB - CNRS, Universite Bordeaux 1, 87, av. du Dr. A. Schweitzer, 33 608 Pessac-Cedex (France); Lenormand, P.; Ansart, F. [Centre Interuniversitaire de Recherche et d' Ingenierie et d' Ingenierie des Materiaux, CIRIMAT, Universite Paul Sabatier, Bat. 2R1, 118 route de Narbonne, 31062 Toulouse Cedex (France)

    2007-09-27

    Yttria stabilized zirconia (YSZ, 8% Y{sub 2}O{sub 3}) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films. (author)

  18. Determination of the solvation film thickness of dispersed particles with the method of Einstein viscosity equation

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The dispersion of a solid particle in a liquid may lead to the formation of solvation film onthe particle surface, which can strongly increase the repulsive force between particles and thus strongly affect the stability of dispersions. The solvation film thickness, which varies with the variation of the property of suspension particles and solutions, is one of the most important parameters of the solvation film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on the Einstein viscosity equation of dispersions, for determining the solvation film thickness of particles is developed. This method was tested on two kinds of silica spherical powders (namely M1 and M2) dispersed in ethyl alcohol, in water, and in a water-ethyl alcohol mixture (1:1 by volume) through measuring the relative viscosity of dispersions of the particles as a function of the volume fraction of the dry particles in the dispersion, and of the specific surface area and the density of the particles. The calculated solvation film thicknesses on M1 are 7.48, 18.65 and 23.74 nm in alcohol, water and the water-ethyl alcohol mixture, 12.41, 12.71 and 13.13 nm on M2 in alcohol, water and the water-ethyl alcohol mixture, respectively.

  19. Preparation and Characterization of PZT Wafers

    Science.gov (United States)

    Seal, A.; Rao, B. S. S. Chandra; Kamath, S. V.; Sen, A.; Maiti, H. S.

    2008-07-01

    Piezoelectric materials have recently attracted a lot of attention for ultrasonic structural health monitoring (shm) in aerospace, defence and civilian sectors, where they can act as both actuators and sensors. Incidentally, piezoelectric materials in the form of wafers (pwas-piezoelectric wafer active sensor, approx. 5-10 mm square and 0.2-0.3 mm thickness) are inexpensive, non intrusive and non-resonant wide band devices that can be surface-mounted on existing structures, inserted between the layers of lap joints or embedded inside composite materials. The material of choice for piezoelectric wafers is lead zirconate titanate (PZT) of composition close to morphotropic phase boundary [pb(zr0.52 ti0.48)o3]. However, an excess pbo is normally added to pzt as a densification aid and also to make up for the lead loss during high temperature sintering. Hence, it is of paramount importance to know how the shift of the lead content from the morphotropic composition affects the piezoelectric and mechanical properties of the sintered wafers, keeping in view the importance of mechanical properties of wafers in shm. In the present study, we observed that with the increase in the lead content of the sintered wafers, the dielectric and piezoelectric constants decreased. However, the elastic modulus, hardness and fracture toughness of the wafers increased with increasing lead content in the composition. Hence, the lead content in the sintered wafers should be optimized to get acceptable piezoelectric and mechanical

  20. Pad-printed thick-film transducers for high-frequency and high-power applications

    Science.gov (United States)

    Wolny, Wanda W.; Ketterling, Jeffrey A.; Levassort, Franck; Lou-Moeller, Rasmus; Filoux, Erwan; Mamou, Jonathan; Silverman, Ronald H.; Lethiecq, Marc

    2011-03-01

    High-frequency-ultrasound transducers are widely used but are typically based either on planar piezoceramic sections that are lapped down to smaller thicknesses or on piezopolymers that may be deformed into more complex geometries. Piezoceramics then require dicing to obtain arrays or can be fractured into spherical geometries to achieve focusing. Piezopolymers are not as efficient for very small element sizes and are normally available only in discrete thicknesses. Thick-film (TF) transducers provide a means of overcoming these limits because the piezoelectric film is deposited with the required thickness, size and geometry, thus avoiding any subsequent machining. Thick-film transducers offer the potential of a wide range of geometries such as single-elements and annular or linear arrays. Here, a single-element focused transducer was developed using a piezoceramic composition adapted to high-power operation which is commonly used at standard MHz frequencies. After fabrication, the transducer was characterized. Using specific transmit-receive electronics and a water tank adapted to high-frequency devices, the transducer was excited using a short pulse to evaluate its bandwidth and imaging capabilities. Finally, it was excited by a one-period sine wave using several power levels to evaluate its capacity to produce high-intensity focused ultrasound at frequencies over 20 MHz.

  1. Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

    Science.gov (United States)

    Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

    2017-01-01

    Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

  2. Field-Assisted and Thermionic Contributions to Conductance in SnO Thick-Films

    Directory of Open Access Journals (Sweden)

    C. Malagù

    2009-01-01

    Full Text Available A deep analysis of conductance in nanostructured SnO2 thick films has been performed. A model for field-assisted thermionic barrier crossing is being proposed to explain the film conductivity. The model has been applied to explain the behavior of resistance in vacuum of two sets of nanostructured thick-films with grains having two well-distinct characteristic radii (=25 nm and =125 nm. In the first case the grain radius is shorter than the depletion region width, a limit at which overlapping of barriers takes place, and in the second case it is longer. The behavior of resistance in the presence of dry air has been explained through the mechanism of barrier modulation through gas chemisorption.

  3. Experimental Comparison of the Behavior between Base Oil and Grease Starvation Based on Inlet Film Thickness

    Directory of Open Access Journals (Sweden)

    D. Kostal

    2017-03-01

    Full Text Available This paper deals with the experimental study of an elastohydrodynamic contact under conditions of insufficient lubricant supply. Starvation level of this type of the contact may be experimentally determined based on the position of the meniscus, but this way can't determine all levels of starvation. Consequent development in the field of tribology achieved theoretical model that can determine all levels of starvation by dependency on the thickness of the lubricant film entering the contact, but it is difficult for experimental verification. The main goal of this work is an experimental study and description of the behavior of the elastohydrodynamic contact with controlled thickness of the lubricant film at the contact input. Contact was lubricated by the base oil and the grease and compared. Results were surprising because the only differences between oil and grease were observed for more viscous lubricants at thicker film layer entering to the contact.

  4. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  5. Cellular-foam polypropylene ferroelectrets with increased film thickness and reduced resonance frequency

    Science.gov (United States)

    Sborikas, Martynas; Wegener, Michael

    2013-12-01

    Ferroelectrets are piezoelectric materials suitable for acoustic applications such as airborne ultrasonic transducers. Typical ferroelectrets exhibit resonance frequencies in the high kHz to low MHz range. In order to decrease the transducer resonance frequencies to the low kHz range, processes such as gas-diffusion expansion and electric charging were adjusted to cellular films which are initially twice as thick as in earlier studies. The demonstrated film expansion and electric charging lead to mechanically soft cellular structures which show high piezoelectric activities with coefficients up to 130 pC/N. Due to the simultaneously increased film thicknesses, the resonance frequencies are lowered down to about 233 kHz.

  6. Hard X-rays for processing hybrid organic-inorganic thick films.

    Science.gov (United States)

    Jiang, Yu; Carboni, Davide; Pinna, Alessandra; Marmiroli, Benedetta; Malfatti, Luca; Innocenzi, Plinio

    2016-01-01

    Hard X-rays, deriving from a synchrotron light source, have been used as an effective tool for processing hybrid organic-inorganic films and thick coatings up to several micrometres. These coatings could be directly modified, in terms of composition and properties, by controlled exposure to X-rays. The physico-chemical properties of the coatings, such as hardness, refractive index and fluorescence, can be properly tuned using the interaction of hard X-rays with the sol-gel hybrid films. The changes in the microstructure have been correlated especially with the modification of the optical and the mechanical properties. A relationship between the degradation rate of the organic groups and the rise of fluorescence from the hybrid material has been observed; nanoindentation analysis of the coatings as a function of the X-ray doses has shown a not linear dependence between thickness and film hardness.

  7. Analysis of variance on thickness and electrical conductivity measurements of carbon nanotube thin films

    Science.gov (United States)

    Li, Min-Yang; Yang, Mingchia; Vargas, Emily; Neff, Kyle; Vanli, Arda; Liang, Richard

    2016-09-01

    One of the major challenges towards controlling the transfer of electrical and mechanical properties of nanotubes into nanocomposites is the lack of adequate measurement systems to quantify the variations in bulk properties while the nanotubes were used as the reinforcement material. In this study, we conducted one-way analysis of variance (ANOVA) on thickness and conductivity measurements. By analyzing the data collected from both experienced and inexperienced operators, we found some operation details users might overlook that resulted in variations, since conductivity measurements of CNT thin films are very sensitive to thickness measurements. In addition, we demonstrated how issues in measurements damaged samples and limited the number of replications resulting in large variations in the electrical conductivity measurement results. Based on this study, we proposed a faster, more reliable approach to measure the thickness of CNT thin films that operators can follow to make these measurement processes less dependent on operator skills.

  8. Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring.

    Science.gov (United States)

    Kim, Jin-Yong; Chung, Chin-Wook

    2015-12-01

    An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (∼1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process.

  9. Film thickness effect on the performance of small molecular solar cell

    Institute of Scientific and Technical Information of China (English)

    LIN Hui; YU Jun-sheng; HUANG Jiang; JIANG Ya-dong

    2008-01-01

    An efficient organic photovoltaic (OPV) cell with an indium-tin-oxide/CuPc/C60/Ag structure has been investigated by changing the film thickness of organic layers. A high open-circuit voltage (Voc) of 0.5 V, a short-circuit current density (JSC) of 5.81 mA/cm2, and a high power conversion efficiency (ηp) of 1.2% were achieved at an optimum film thickness. The results demonstrate that material thickness is an important factor to cell optimization, especially for maximizing the absorption rate as well as reducing the cell resistance. Experimental results also indicate that the power conversion efficiency increases from 1.2% to 1.54% as a BCP exciton blocking layer of 10 nm is introduced.

  10. Thickness of Residual Wetting Film in Liquid-Liquid Displacement in Capillary Channels

    Science.gov (United States)

    Beresnev, I. A.; Gaul, W.; Vigil, D.

    2010-12-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a non-wetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of this wetting film? Understanding this question may determine the ultimate oil recovery. A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. We develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of about 20 % the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  11. Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

    Science.gov (United States)

    Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

    2016-02-01

    This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

  12. On the Correlation of Specific Film Thickness and Gear Pitting Life

    Science.gov (United States)

    Krantz, Timothy L.

    2015-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness defined as the ratio of lubricant film thickness to the composite surface roughness. It can be difficult to combine results of studies to create a cohesive and comprehensive dataset. In this work gear surface fatigue lives for a wide range of specific film values were studied using tests done with common rigs, speeds, lubricant temperatures, and test procedures. This study includes previously reported data, results of an additional 50 tests, and detailed information from lab notes and tested gears. The dataset comprised 258 tests covering specific film values (0.47 to 5.2). The experimentally determined surface fatigue lives, quantified as 10-percent life estimates, ranged from 8.7 to 86.8 million cycles. The trend is one of increasing life for increasing specific film. The trend is nonlinear. The observed trends were found to be in good agreement with data and recommended practice for gears and bearings. The results obtained will perhaps allow for the specific film parameter to be used with more confidence and precision to assess gear surface fatigue for purpose of design, rating, and technology development.

  13. Optimization of composition and crystal structure for processing route of PZT system

    Energy Technology Data Exchange (ETDEWEB)

    Kakimoto, K.; Kakemoto, H.; Fujita, S.; Masuda, Y. [Hachinohe Inst. of Tech., Aomori (Japan). JSPS Research Project

    2002-07-01

    An evaluation procedure that employs by calibrated X-ray fluorescence (XRF) analysis of the chemical composition of PZT bulk ceramics and thin films deposited on Si-based substrate by the pulsed laser deposition (PLD) technique has been established. The plots of cation fraction and XRF intensity for Pb, Zr and Ti atoms were curve-fitted using the results obtained by XRF measurement of normalized PZT samples whose compositions were selected from those near the morphotropic phase boundary (MPB) of PZT(Zr/Ti=53/47). While the Pb curve was almost linear, Zr and Ti yielded parabolic curves due to the effect of matrix Pb. In the case of thin-film analysis, the substrate beneath the thin film exerted a matrix effect on the quantitative analysis of the thin film. Both the coexisting element effect and the substrate effect were calibrated to prepare an excellent XRF table for the precise quantitative analysis of PZT thin films. The present XRF table quantitatively revealed a variation in PZT composition during the high-temperature sintering process of bulk and even its thin-film prepared by PLD. The combination of X-ray diffraction (XRD) with model calculation also supported quantitative XRF analysis of the compositional difference from Pb stoichiometry. (orig.)

  14. Deposition of thick Co-rich CoPtP films with high energy product for magnetic microelectromechanical applications

    Energy Technology Data Exchange (ETDEWEB)

    Kulkarni, Santosh [Microsystems Center, Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Roy, Saibal, E-mail: saibal.roy@tyndall.i [Microsystems Center, Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

    2010-05-15

    We report the development of Co-rich CoPtP films of thicknesses up to 82 mum for use in magnetic MEMS applications. These films have been deposited using a combination of pulse-reverse plating with the addition of stress-relieving additives to the bath. The films were electroplated on sputtered Cu/Ti seed layer on silicon with an optimized thickness of 100/20 nm. The composition, crystalline structure, grain size and magnetic properties of the CoPtP films of varying thickness are compared and analyzed. The 3-mum-thick CoPtP film showed a columnar structure and strong perpendicular anisotropy. This film shows a perpendicular coercivity of 2150 Oe, a remanence of 0.564 T and a maximum energy product of 20 kJ/m{sup 3}. As the thickness of the plated film is increased, there is a gradual decrease in the coercivity and anisotropy. The 82-mum-thick film had a perpendicular coercivity of 1150 Oe and a remanence of 0.35 T. While there is a drop in coercivity and anisotropy, the remanence and maximum energy product remain constant for film thicknesses greater than 13 mum. The reason for the drop in coercivity and the near-constant remanence for thicker CoPtP films is discussed here. The coercivity of the thick Co-rich CoPtP film reported in this work is similar to those reported in the literature; the values of remanence, maximum energy product and saturation magnetization are the highest of all the thick (>50 mum) electroplated films in the literature.

  15. Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

    Science.gov (United States)

    Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

    2017-07-01

    The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

  16. Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

    Science.gov (United States)

    Hajakbari, Fatemeh; Shafieinejad, Farzaneh

    2016-03-01

    In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

  17. An experimental evaluation of the Hamrock and Dowson minimum film thickness equation for fully flooded EHD point contacts

    Science.gov (United States)

    Koye, K. A.; Winer, W. O.

    1980-08-01

    Fifty-seven measurements of the minimum lubricant film separating the elastohydrodynamically lubricated point contact of a steel crowned roller and a flat sapphire disk were made by an optical interferometry technique. The data collected were used to evaluate the Hamrock and Dowson minimum EHD film thickness model over a practical range of contact ellipticity ratio where the major axis of the contact ellipse is aligned both parallel and perpendicular to the direction of motion. A statistical analysis of the measured film thickness data showed that on the average the experimental data averaged 30 percent greater film thickness than the Hamrock and Dowson model predicts.

  18. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  19. Thickness Dispersion of Surface Plasmon of Ag Nano-thin Films: Determination by Ellipsometry Iterated with Transmittance Method

    Science.gov (United States)

    Gong, Junbo; Dai, Rucheng; Wang, Zhongping; Zhang, Zengming

    2015-03-01

    Effective optical constants of Ag thin films are precisely determined with effective thickness simultaneously by using an ellipsometry iterated with transmittance method. Unlike the bulk optical constants in Palik's database the effective optical constants of ultrathin Ag films are found to strongly depend on the thickness. According to the optical data two branches of thickness dispersion of surface plasmon energy are derived and agreed with theoretical predication. The thickness dispersion of bulk plasmon is also observed. The influence of substrate on surface plasmon is verified for the first time by using ellipsometry. The thickness dependent effective energy loss function is thus obtained based on this optical method for Ag ultrathin films. This method is also applicable to other ultrathin films and can be used to establish an effective optical database for ultrathin films.

  20. Thickness dependence of the magnetic properties of high-coercive Pr-Fe-B thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Yang, F. [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China); Liu, W. [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China)], E-mail: wliu@imr.ac.cn; Cui, W.B.; Feng, J.N.; Zhang, Y.Q.; Zhang, Z.D [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China)

    2008-10-01

    The magnetic properties of Pr-Fe-B films with perpendicular magnetic anisotropy have been studied as a function of thickness varying from 10 to 1200 nm. The crucial thickness for forming the Pr{sub 2}Fe{sub 14}B phase is estimated to be about 25 nm in our study, and the perpendicular anisotropy shows a trend to vanish for thick films. The coercivity of the films initially increases with increasing film thickness, gradually reaching a value which is near the value for bulk material. The magnetic domain size increases with increasing thickness. The surface morphology, the roughness and the domain structure of the films have been investigated by means of atomic-force microscopy and magnetic-force microscopy.

  1. Quartz Microbalance Study of 400-angstrom Thick Films near the lambda Point

    Science.gov (United States)

    Chan, Moses H. W.

    2003-01-01

    In a recent measurement we observed the thinning of an adsorbed helium film induced by the confinement of critical fluctuations a few millikelvin below the lambda point. A capacitor set-up was used to measure this Casimir effect. In this poster we will present our measurement of an adsorbed helium film of 400 angstroms near the lambda point with a quartz microbalance. For films this thick, we must take into account the non-linear dynamics of the shear waves in the fluid. In spite of the added complications, we were able to confirm the thinning of the film due to the Casimir effect and the onset of the superfluid transition. In addition, we observe a sharp anomaly at the bulk lambda point, most likely related to critical dissipation of the first sound. This work is carried out in collaboration with Rafael Garcia, Stephen Jordon and John Lazzaretti. This work is funded by NASA's Office of Biological and Physical Research under grant.

  2. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films.

    Science.gov (United States)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C

    2013-10-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (>0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells.

  3. Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Won; Kuk, Seung-Hee; Han, Min-Koo [School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742 (Korea, Republic of); Ji, Kwang-Sun; Lee, Heon-Min [LG Electronics, 16 Woomyeon-Dong Seocho-Gu, Seoul (Korea, Republic of)

    2011-01-15

    Al doped ZnO (AZO) film was continuously deposited on ITO precursor on glass substrate by d.c. magnetron sputtering. The thickness of ITO was varied from 30 to 120 nm in order to investigate the effect of ITO thickness on crystallinity of AZO film. X-ray diffraction measurement shows that AZO film grown on ITO has an enhanced (0 0 2) preferred orientation as the ITO thickness was increased. The crystalline structure improvement of AZO film with an increase of ITO precursor thickness is due to the near-epitaxial growth of AZO on ITO precursor. As the ITO thickness was increased, mobility of AZO film by the Hall measurement was significantly increased from 5.4 cm{sup 2}/V s (no ITO) to 23.6 cm{sup 2}/V s (ITO 120 nm), and resistivity was about 81.7% improved from 1.99 x 10{sup -3} to 3.63 x 10{sup -4} {omega} cm. The AZO films with ITO revealed excellent average transmission of visible (90.0%) and NIR (89.6%) regions, whereas those of AZO film without ITO were 82.1% and 88.1%, respectively. The haze values of AZO film with ITO of 90 and 120 nm are similar or higher than those of AZO film without ITO. The surface textured AZO film with ITO precursor is promising for optoelectronic applications such as the front TCO of thin film solar cells. (author)

  4. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  5. The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

    Science.gov (United States)

    Akaltun, Yunus; Yıldırım, M. Ali; Ateş, Aytunç; Yıldırım, Muhammet

    2011-05-01

    CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m e*/m o), refractive index ( n), optical static and high frequency dielectric constant (ɛ o, ɛ ∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10 6 and 10 2 Ω-cm with increasing film thickness at room temperature.

  6. Thickness-dependent quantum oscillations in Cd3As2 thin films

    Science.gov (United States)

    Cheng, Peihong; Zhang, Cheng; Liu, Yanwen; Yuan, Xiang; Song, Fengqi; Sun, Qingqing; Zhou, Peng; Zhang, David Wei; Xiu, Faxian

    2016-08-01

    Cd3As2 is a new kind of three-dimensional (3D) Dirac semimetal with extraordinary carrier mobility, which can be viewed as ‘3D graphene’. Theory predicts that Cd3As2 can be driven into a quantum spin Hall insulator with a sizeable band gap by reducing dimensionality. In this letter, we report the systematic growth of undoped Cd3As2 thin films with the thickness of 50 ˜ 900 nm by molecular beam epitaxy. The magneto-transport study on these single-crystalline films shows a high mobility in the range of 3.8 ˜ 9.1 × 103 cm2 · V-1 · s-1 and a relative low electron concentration of 1 ˜ 8 × 1017 cm-3. Significantly, a thickness-induced semimetal-to-semiconductor transition was observed. In contrast with what is expected in the bulk counterpart, the 50 nm-thick Cd3As2 film exhibits semiconducting characteristics, witnessing an emerged bandgap opening when the dimensionality is reduced. Finally, the analyses on the temperature- and angular-dependence of magneto-resistance and Shubnikov-de Hass oscillations reveal a non-trivial to trivial Berry’s phase transition that is in connection with the reduced dimensionality. Our results demonstrate that the Cd3As2 thin films with unique electronic structure and high mobility hold promise for Dirac semimetal device applications.

  7. The damping model for sea waves covered by oil films of a finite thickness

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yanmin; ZHANG Jie; WANG Yunhua; MENG Junmin; ZHANG Xi

    2015-01-01

    In combination with a wave action balance equation, a damping model for sea waves covered by oil films of a finite thickness is proposed. The damping model is not only related to the physical parameters of the oil film, but also related to environment parameters. Meanwhile, the parametric analyses have been also conducted to understand the sensitivity of the damping model to these parameters. And numerical simulations demonstrate that a kinematic viscosity, a surface/interfacial elasticity, a thickness, and a fractional filling factor cause more significant effects on a damping ratio than the other physical parameters of the oil film. From the simulation it is also found that the influences induced by a wind speed and a wind direction are also remarkable. On the other hand, for a thick emulsified oil film, the damping effect on the radar signal induced by the reduction of an effective dielectric constant should also be taken into account. The simulated results are compared with the damping ratio evaluated by the 15 ENVISAT ASAR images acquired during the Gulf of Mexico oil spill accident.

  8. Magnetostatic Coupling in CoFe2O4/Pb(Zr0.53Ti0.47)O3 Magnetoelectric Composite Thin Films of 2-2 Type Structure

    Institute of Scientific and Technical Information of China (English)

    Yu-dong Xu; Lei Wang; Min Shi; Hai-lin Su; Guang Wu

    2012-01-01

    CoFe2O4/Pb(Zr0.5aTi0.47)O3 (CFO/PZT) magnetoelectric composite thin films of 2-2 type structure had been prepared onto Pt/Ti/SiO2/Si substrate by a sol-gel process and spin coating technique.The structure of the prepared thin film is substrate/PZT/CFO/PZT/CFO.Two CFO ferromagnetic layers are separated from each other by a thin PZT layer.The upper CFO layer is magnetostatically coupled with the lower CFO layer.Subsequent scanning electron microscopy (SEM) investigations show that the prepared thin films exhibit good morphologies and compact structure,and cross-sectional micrographs clearly display a multilayered nanostructure of multilayered thin films.The composite thin films exhibit both good magnetic and ferroelectric properties.The spacing between ferromagnetic layers can be varied by adjusting the thickness of intermediate PZT layer.It is found that the strength of magnetostatic coupling has a great impact on magnetoelectric properties of composite thin films,i.e.,the magnetoelectric voltage coefficient of composite thin film tends to increase with the decreasing of pacing between two neighboring CFO ferromagnetic layers as a result of magnetostatic coupling effect.

  9. Perfect light trapping in nanoscale thickness semiconductor films with resonant back reflector and spectrum-splitting structures

    CERN Document Server

    Liu, Jiang-Tao; Yang, Wen; Li, Jun

    2014-01-01

    The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in $<100$ nm thick films on top of one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.

  10. The influence of the film thickness of nanostructured alpha-Fe2O3 on water photooxidation.

    Science.gov (United States)

    Souza, Flavio Leandro; Lopes, Kirian Pimenta; Longo, Elson; Leite, Edson Roberto

    2009-02-28

    The present work shows the influence of the film thickness in the optical and photoelectrochemical properties of nanostructured alpha-Fe(2)O(3) thin film. We found that the film thickness has a strong influence on the optical absorption and the results here reported can help in the design of nanostructured alpha-Fe(2)O(3) with superior performance for water photo-oxidation. The results show that the optical property of the hematite film is affected by the film thickness, probably due to the stress induced by the strong interaction between film and substrate. This stress generates defects in the crystal lattice of the hematite film, increasing the (e(-))-(h(+)) recombination process.

  11. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen;

    2006-01-01

    Films of yuria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive Xray spectrome...

  12. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  13. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Science.gov (United States)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-04-01

    The evidence is reported for enhancement of critical current density J(c) in YBa2Cu3O(7-delta) thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50 percent in J(c) (up to about 500 A/sq cm at T = 4.2 K) was obtained in films made from YBCO + 60 wt pct Ag powder, fabricated by the spin-on technique on (100) SrTiO3, which is correlated with improvements in structure. The resulting films are 10 microns thick, uniform, partially textured, and show good adherence. The critical temperature Tc is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  14. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Energy Technology Data Exchange (ETDEWEB)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D. (Institute of Micro- and Opto-electronics, Department of Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland (CH))

    1991-04-15

    The evidence is reported for enhancement of critical current density {ital J}{sub {ital c}} in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50% in {ital J}{sub {ital c}} (up to {similar to}500 A/cm{sup 2} at {ital T}=4.2 K) was obtained in films made from YBCO+60wt % Ag powder, fabricated by the spin-on technique on (100) SrTiO{sub 3}, which is correlated with improvements in structure. The resulting films are 10 {mu}m thick, uniform, partially textured, and show good adherence. The critical temperature {ital T}{sub {ital c}} is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  15. Thickness, stability and contact angle of liquid films on and inside nanofibres, nanotubes and nanochannels.

    Science.gov (United States)

    Mattia, Davide; Starov, Victor; Semenov, Sergey

    2012-10-15

    While the stability of liquid films on substrates is a classical topic of colloidal science, the availability of nanostructured materials, such as nanotubes, nanofibres and nanochannels, has raised the question of how the stability of liquid films and their wetting behaviour is affected by nanoscale confinement. This paper will present the conditions for the stability of liquid films on and inside cylindrical solid substrates with nanometre scale characteristic dimensions. It is shown that the stability is determined by an effective disjoining/conjoining pressure isotherm which differs from the corresponding disjoining/conjoining pressure isotherm of flat liquid films on flat solid substrates. From the former, the equilibrium contact angles of drops on an outer or inner surface of a cylindrical capillary have been calculated as a function of surface curvature, showing that the expressions for equilibrium contact angles vary for different geometries, in view of the difference in thickness of the film of uniform thickness with which the bulk liquid (drops or menisci) is at equilibrium. These calculations have been extended to the case of glass nanocapillaries and carbon nanotubes, finding good agreement with experimental results in the literature.

  16. Development of valve-less tube-type micropump with PZT actuator

    Science.gov (United States)

    Tsuchiya, Kazuyoshi; Morishima, Akifumi; Takamata, Atsushi; Uetsuji, Yasutomo; Nakamachi, Eiji

    2008-12-01

    The medical devices such as a micropump to extract blood through a tube have a structure which needle and pump part are mutually separated. Therefore, it is not easy to make smaller than the conventional pump. In this research, we aim to develop the pump combined with a tube as a final purpose. In this study, ring type PZT elements are mounted on the surface of the silicone tube, and the stationary waves are generated in the tube by the vibration of those PZT on the tube verified by changing the AC voltage. The waves generated by the collision of large and small stationary waves are synthesized, and then the wave becomes a progressive wave with an elliptic motion in the tube. The flow function demonstrated by the tube type micropump was evaluated and the flow velocities were increased 2.78% and decreased 1.79%. On the other hand, we have a technique to produce a titanium microtube by using RF magnetron sputtering deposition technique. A Titanium micro tube with the size of a female mosquito's labium (60µm external and 25μm internal diameter) was produced by the sputter deposition method. In order to deposit PZT thin film on the titanium micro tube, the thin film process is used. The thin film deposition conditions of the PZT thin film are investigated and the characteristic of the PZT thin films are evaluated.

  17. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    Gu Li-Ping; Tang Chun-Jiu; Jiang Xue-Fan; J.L.Pintob

    2011-01-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHX (x = 1,2,3) growth species for adsorption sites.

  18. Properties of MgB{sub 2} thick film on silicon carbide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li Fen; Guo Tao; Zhang Kaicheng; Chen Liping; Chen Chinping; Feng Qingrong [Department of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871(China)

    2006-10-15

    We have successfully synthesized MgB{sub 2} thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature T{sub c} above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB{sub 2}, with Mg and small MgO impurities. The critical current density J{sub c}, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA cm{sup -2} in self-field at 10 K.

  19. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  20. Fabrication of sub-micro size PZT array and their ferroelectric properties

    Institute of Scientific and Technical Information of China (English)

    ZHAO Gaoyang; ZHANG Weihua; XU Guomin; DENG Xiaocui; JIANG Bailing; ZHAO Wei

    2006-01-01

    The photosensitive PZT sols and their gel films were prepared by sol-gel process. Based on the photosensitivity of the PZT gel films, two-dimensional (2D) array of the PZT gel film was fabricated using twice-exposure of double-beam interference on the gel film. PZT gel films coated on ITO/quartz substrate were exposed to an interference fringe of 325 He-Cd laser beams, the substrate was rotated by 90° between the first and second irradiation steps. Island type periodic 2D array structures with a pitch of 1 μm and cell size of about 480 nm × 480 nm × 40 nm were formed after the irradiation, and followed by leaching with organic solvent, and then by heat treatment at 600℃ for 15 min. The hysteresis loops of the cell in PZT array were in-situ measured by the online-operation of TF analyzer and atomic force microscope (AFM). The probe can be located on the locked cell of PZT array in the AFM image. The alternating voltage applied to the locked cell is supplied by the TF analyzer through the conductive coating probe, and then the test signal is fed back to the TF analyzer to obtain the hysteresis loop of the locked cell of array in the absence of top electrode. The results show that the sub-micro size PZT arrays prepared in this way are of polarization reversal characteristics with the alternating electric fields, thereby exhibiting obvious ferroelectricity.

  1. Thin film magnetoelectric composites near spin reorientation transition

    Energy Technology Data Exchange (ETDEWEB)

    Tiercelin, N. [Joint European Laboratory LEMAC: IEMN CNRS 8520-Ecole Centrale de Lille, Villeneuve d' Ascq 59652 (France)], E-mail: Nicolas.Tiercelin@iemn.univ-lille1.fr; Preobrazhensky, V. [Joint European Laboratory LEMAC: IEMN CNRS 8520-Ecole Centrale de Lille, Villeneuve d' Ascq 59652 (France); Joint European Laboratory LEMAC: WRC-GPI-RAS 117454, Vernadsky prosp. 78, Moscow (Russian Federation); Mortet, V. [Institute for Materials Research (IMO), Hasselt University, IMEC vzw, Division IMOMEC, B-3590 Diepenbeek (Belgium); Talbi, A. [Joint European Laboratory LEMAC: IEMN CNRS 8520-Ecole Centrale de Lille, Villeneuve d' Ascq 59652 (France); Soltani, A. [IEMN CNRS 8520, Bd Poincare, Villeneuve d' Ascq 59651 (France); Haenen, K. [Institute for Materials Research (IMO), Hasselt University, IMEC vzw, Division IMOMEC, B-3590 Diepenbeek (Belgium); Pernod, P. [Joint European Laboratory LEMAC: IEMN CNRS 8520-Ecole Centrale de Lille, Villeneuve d' Ascq 59652 (France)

    2009-06-15

    We report the use of a magnetic instability of the spin reorientation transition type to enhance the magnetoelectric sensitivity in magnetostrictive-piezoelectric structures. We present the theoretical study of a clamped beam resonant actuator composed of a piezoelectric element on a passive substrate actuated by a magnetostrictive nanostructured layer. The experiments were made on a polished 150 {mu}m thick 18x3 mm{sup 2} lead zirconate titanate (PZT) plate glued to a 50 {mu}m thick silicon plate and coated with a giant magnetostrictive nanostructured Nx(TbCo{sub 25nm}/FeCo{sub 5nm}) layer. A second set of experiments was done with magnetostrictive layer deposited on PZT plate. Finally, a film/film structure using magnetostrictive and aluminium nitride films on silicon substrate was realized, and showed ME amplitudes reaching 30 V Oe{sup -1} cm{sup -1}. Results agree with analytical theory.

  2. Negative dependence of surface magnetocrystalline anisotropy energy on film thickness in Co33Fe67 alloy

    Science.gov (United States)

    Wang, De-Lai; Cui, Ming-Qi; Yang, Dong-Liang; Dong, Jun-Cai; Xu, Wei

    2016-10-01

    In this work, the magnetocrystalline anisotropy energy (MAE) on the surface of Fe33Co67 alloy film is extracted from x-ray magnetic linear dichroism (XMLD) experiments. The result indicates that the surface MAE value is negatively correlated with thickness. Through spectrum calculations and analysis, we find that besides the thickness effect, another principal possible cause may be the shape anisotropy resulting from the presence of interface roughness. These two factors lead to different electron structures on the fermi surface with different exchange fields, which produces different spin-orbit interaction anisotropies. Project supported by the National Natural Science Foundation of China (Grant Nos. 11075176 and 11375131).

  3. Long thickness-extensional waves in thin film bulk acoustic wave filters affected by interdigital electrodes.

    Science.gov (United States)

    Liu, Jing; Du, Jianke; Wang, Ji; Yang, Jiashi

    2017-03-01

    We studied free vibrations of thin-film bulk acoustic wave filters with interdigital electrodes theoretically using the scalar differential equations by Tiersten and Stevens. The filters are made from AlN or ZnO films on Si substrates with ground and driving electrodes. They operate with thickness-extensional modes. The basic vibration characteristics including resonant frequencies and mode shapes were obtained. Their dependence on various geometric parameters was examined. It was found that for properly design filters there exist trapped modes whose vibrations are strong in regions with a driving electrode and decay away from the electrode edges. These trapped modes are essentially long plate thickness-extensional modes modulated by the electrode fingers. The number of trapped modes is sensitive to the geometric parameters.

  4. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Science.gov (United States)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Geng, De-qiang; Wu, Di; Lu, Yan-qing

    2016-07-01

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (˜28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  5. Overview of thick-film technology as applied to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Firor, K.; Hogan, S.

    1980-01-01

    Thick-film technology was developed by the electronics industry as a means of fabricating components and miniature circuitry. Today, the solar cell industry is looking at screen printing as an alternate to more expensive, high-vacuum techniques in several of the production steps during the manufacture of silicon solar cells. Screen printing is already fairly well established as a means of providing electrical contact to a cell and for the formation of a back surface field. Now under investigation are the possibilities of non-noble metal contacts and protective and antireflective coatings applied to solar cells by the use of screen printing. Most exciting is the work being done in the non-silicon area on the fabrication of the active layers of a solar cell, using thick-film inks made up of II-VI semiconductors.

  6. Electrical Capacitance Tomography Measurement of Flow Patterns and Film Thickness in a Thermosyphon

    Institute of Scientific and Technical Information of China (English)

    Jingtao LI; Qi CHEN; Xiangyuan DONG; Shi LIU

    2005-01-01

    An experimental study was performed to evaluate the suitability of using an electrical capacitance tomography (ECT) system to visualize the flow patterns, and to measure the film thickness of the annular flow in a two-phase closed thermosyphon (TPCT). The performance of the ECT system was examined over a range of flow conditions.The experimental data were compared with the visual observations and existing correlations. Results indicated that the ECT system, with the linear back projection (LBP) algorithm, could be used to give an on-line qualitative image of the flow patterns. The Landweber iteration algorithm with optimal step length was implemented off-line to reconstruct high-resolution images. Then, the images were analyzed to obtain the film thickness of the annular flow. The experimental data compared well with the Nusselt's equation in low vapor velocity range, but showed an increasing deficiency with the increase of vapor velocity.

  7. Neutron methods for the direct determination of the magnetic induction in thick films

    Energy Technology Data Exchange (ETDEWEB)

    Kozhevnikov, S.V., E-mail: kozhevn@nf.jinr.ru [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Ott, F. [CEA, IRAMIS, Laboratoire Léon Brillouin, F-91191 Gif sur Yvette (France); CNRS, IRAMIS, Laboratoire Léon Brillouin, F-91191 Gif sur Yvette (France); Radu, F. [Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Strasse 15, D-12489 Berlin (Germany)

    2016-03-15

    We review different neutron methods which allow extracting directly the value of the magnetic induction in thick films: Larmor precession, Zeeman spatial beam-splitting and neutron spin resonance. Resulting parameters obtained by the neutron methods and standard magnetometry technique are presented and compared. The possibilities and specificities of the neutron methods are discussed. - Highlights: • We present neutron methods for investigations of the thick magnetic films. • It is the methods for the direct determination of the magnetic induction. • Magnetic induction in bulk, at single interface and in a single domain. • It is Larmor precession, Zeeman spatial beam-splitting and neutron spin resonance. • These methods are complementary to polarized neutron reflectometry.

  8. Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential

    Energy Technology Data Exchange (ETDEWEB)

    Marotti, R.E.; Guerra, D.N.; Machado, G.; Dalchiele, E.A. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Julio Herrera y Reissig 565, C.C. 30, Montevideo 11000 (Uruguay); Bello, C. [Unidad Central de Instrumentacion Cientifica UCIC, Facultad de Ciencias, Universidad de la Republica, Igua 4225, C.C. 10773, Montevideo 11400 (Uruguay)

    2004-05-01

    ZnO thin films were electrochemically deposited onto opaque and transparent substrates (copper and ITO). The electrolyte consisted of a 0.1M Zn(NO{sub 3}){sub 2} solution with the initial pH adjusted to 6.0, different electrodeposition potentials from E=-700 to -1200mV (saturated calomel electrode, SCE). The resulting samples have the structural, chemical and morphological properties of hexagonal ZnO, with thickness varying from less than 1{mu}m to almost 30{mu}m. The bandgap energy varies inversely with film thickness, ranging from less than 3.1 to 3.4eV. The bandgap also depends on the electrodeposition potential. This result allows to adjust the desired absorption edge within a 30nm wide region in the UV.

  9. Evaluation of Cadmium-Free Thick Film Materials on Alumina Substrates

    Energy Technology Data Exchange (ETDEWEB)

    L. H. Perdieu

    2009-09-01

    A new cadmium-free material system was successfully evaluated for the fabrication of thick film hybrid microcircuits at Honeywell Federal Manufacturing & Technologies (FM&T). The characterization involved screen printing, drying and firing two groups of resistor networks which were made using the current material system and the cadmium-free material system. Electrical, environmental and adhesion tests were performed on both groups to determine the more suitable material system. Additionally, untrimmed test coupons were evaluated to further characterize the new materials. The cadmiumfree material system did as well or better than the current material system. Therefore, the new cadmium-free material system was approved for use on production thick film product.

  10. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

    Science.gov (United States)

    Reifenberg, John P.; Panzer, Matthew A.; Kim, SangBum; Gibby, Aaron M.; Zhang, Yuan; Wong, Simon; Wong, H.-S. Philip; Pop, Eric; Goodson, Kenneth E.

    2007-09-01

    Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340°C for layers with thicknesses near 60, 120, and 350nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.

  11. DESIGN OF FILM THICKNESS INSTRUMENT FOR FIBRE POLYMER COMPOSITES TRIBOLOGICAL EXPERIMENTS

    Directory of Open Access Journals (Sweden)

    B. F. YOUSIF

    2014-04-01

    Full Text Available New technique to measure film thickness in tribological experiments is presented in the current study. The technique is based on strain gauges circuit fixed on a lever of the block on ring (BOR machine. Conversion of strain gauge readings was made to determine the film thickness values. For testing purposes, experiments were conducted using the new machine to investigate the wear performance of glass/polyester composites. The tests were performed against aluminium counterface at different applied loads (0.5 N to 3 N for 10 minutes sliding time under wet contact conditions. From the results, the new technique highly assisted to analysis the tribological results. The SEM showed different damage features.

  12. DETERMINATION OF LIQUID FILM THICKNESS FOLLOWING DRAINING OF CONTACTORS, VESSELS, AND PIPES IN THE MCU PROCESS

    Energy Technology Data Exchange (ETDEWEB)

    Poirier, M; Fernando Fondeur, F; Samuel Fink, S

    2006-06-06

    The Department of Energy (DOE) identified the caustic side solvent extraction (CSSX) process as the preferred technology to remove cesium from radioactive waste solutions at the Savannah River Site (SRS). As a result, Washington Savannah River Company (WSRC) began designing and building a Modular CSSX Unit (MCU) in the SRS tank farm to process liquid waste for an interim period until the Salt Waste Processing Facility (SWPF) begins operations. Both the solvent and the strip effluent streams could contain high concentrations of cesium which must be removed from the contactors, process tanks, and piping prior to performing contactor maintenance. When these vessels are drained, thin films or drops will remain on the equipment walls. Following draining, the vessels will be flushed with water and drained to remove the flush water. The draining reduces the cesium concentration in the vessels by reducing the volume of cesium-containing material. The flushing, and subsequent draining, reduces the cesium in the vessels by diluting the cesium that remains in the film or drops on the vessel walls. MCU personnel requested that Savannah River National Laboratory (SRNL) researchers conduct a literature search to identify models to calculate the thickness of the liquid films remaining in the contactors, process tanks, and piping following draining of salt solution, solvent, and strip solution. The conclusions from this work are: (1) The predicted film thickness of the strip effluent is 0.010 mm on vertical walls, 0.57 mm on horizontal walls and 0.081 mm in horizontal pipes. (2) The predicted film thickness of the salt solution is 0.015 mm on vertical walls, 0.74 mm on horizontal walls, and 0.106 mm in horizontal pipes. (3) The predicted film thickness of the solvent is 0.022 mm on vertical walls, 0.91 mm on horizontal walls, and 0.13 mm in horizontal pipes. (4) The calculated film volume following draining is: (a) Salt solution receipt tank--1.6 gallons; (b) Salt solution feed

  13. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system

    Science.gov (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi

    2016-10-01

    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  14. Effect of preheating on the film thickness of contemporary composite restorative materials

    OpenAIRE

    Dimitrios Dionysopoulos; Kosmas Tolidis; Paris Gerasimou; Eugenia Koliniotou-Koumpia

    2014-01-01

    Background/purpose: Recently, the placement of composite materials at an elevated temperature has been proposed in order to increase their flow for better adaptation in cavity walls. The aim of this in vitro study was to evaluate the effect of preheating on the film thickness of a variety of commercially available conventional composites and to compare them with those obtained from a variety of flowable composites at room temperature. Materials and methods: The composites were three nanohy...

  15. Investigation of Polymer Thick-film Piezoresistors for Medical Wrist Rehabilitation and Artificial Knee Load Sensors

    OpenAIRE

    2014-01-01

    Readily-available and low-cost commercial polymer-based composite materials, such as standard epoxy-fibreglass printed circuit board (PCB) substrates and resin-carbon thick-film piezoresistors, were evaluated as a solution for medical force sensors, such as a wrist rehabilitation device and an implantable wireless artificial knee force sensor. We show that such materials have high sensitivity, and sufficient short-term stability – provided careful mechanical design and materials selection are...

  16. CO Responses of Sensors Based on Cerium Oxide Thick Films Prepared from Clustered Spherical Nanoparticles

    OpenAIRE

    Woosuck Shin; Takafumi Akamatsu; Toshio Itoh; Ichiro Matsubara; Noriya Izu

    2013-01-01

    Various types of CO sensors based on cerium oxide (ceria) have been reported recently. It has also been reported that the response speed of CO sensors fabricated from porous ceria thick films comprising nanoparticles is extremely high. However, the response value of such sensors is not suitably high. In this study, we investigated methods of improving the response values of CO sensors based on ceria and prepared gas sensors from core-shell ceria polymer hybrid nanoparticles. These hybrid nano...

  17. Thick-Film Carbon Dioxide Sensor via Anodic Adsorbate Stripping Technique and Its Structural Dependence

    OpenAIRE

    Chung-Chiun Liu; Shih-Han Wang; Kanokorn Photinon

    2009-01-01

    A three-electrode based CO2 sensor was fabricated using thick-film technology. The performance of this sensor was further enhanced by incorporating platinum nanoparticles onto the working electrode surface. An eight-fold increase in the signal output was obtained from the electrode with the platinum nanoparticles. The sensing output was linearly related to the CO2 presented. Stability measurements demonstrated that the decline of the active surface area and the sensitivity of the sensor were ...

  18. Electrical properties of thick film capacitors based on barium titanate glass formulations

    Energy Technology Data Exchange (ETDEWEB)

    Leppaevuori, S.; Uusimaeki, A.; Hannula, T.

    1981-12-18

    We carried out an investigation of the effects of the glass content of the dielectric layer of thick film capacitors with a barium titanate glass formulation on the capacitance density, loss factor and breakdown voltage of the capacitors. These effects were studied by varying the firing temperature and glass content of the dielectric paste and by using different types of electrode paste. The characteristics of a test capacitor were also measured.

  19. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  20. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B.

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 μm) and thick (about 2–3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated. PMID:22205871

  1. High Quality Factor Silicon Cantilever Driven by PZT Actuator for Resonant Based Mass Detection

    CERN Document Server

    Lu, Jian; Zhang, Yi; Mihara, Takashi; Itoh, Toshihiro; Maeda, Ryutaro

    2008-01-01

    A high quality factor (Q-factor) piezoelectric lead zirconat titanate (PZT) actuated single crystal silicon cantilever was proposed in this paper for resonant based ultra-sensitive mass detection. Energy dissipation from intrinsic mechanical loss of the PZT film was successfully compressed by separating the PZT actuator from resonant structure. Excellent Q-factor, which is several times larger than conventional PZT cantilever, was achieved under both atmospheric pressure and reduced pressures. For a 30 micrometer-wide 100 micrometer-long cantilever, Q-factor was measured as high as 1113 and 7279 under the pressure of 101.2 KPa and 35 Pa, respectively. Moreover, it was found that high-mode vibration can be realized by the cantilever for the pursuit of great Q-factor, while support loss became significant because of the increased vibration amplitude at the actuation point. An optimized structure using node-point actuation was suggested then to suppress corresponding energy dissipation.

  2. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  3. Study of micron-thick MgB{sub 2} films on niobium substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zhuang Chenggang; Yao Dan; Li Fen; Zhang Kaicheng; Feng Qingrong; Gan Zizhao [School of Physics and State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)

    2007-03-15

    1 {mu}m thick polycrystalline MgB{sub 2} films have been grown on commercial niobium sheets using the hybrid physical-chemical vapour deposition technique (HPCVD). Their zero-resistance transition temperature T{sub c}{sup 0} ranges from 38 to 39 K and the transition temperature width {delta}T{sub c} is about 0.1-0.2 K. The films are composed of regular plate-shaped MgB{sub 2} crystallites and have lattice constants about the bulk values. Some diffusion regions were observed at the interface between the film and the substrate by a line scanning spectra of energy-dispersive x-ray spectroscopy (EDX) on the cross section, which might enhance the adhesion of the coated layer to the substrate. The critical current densities, J{sub c}, of these films, calculated by the Bean model, are greater than 5 x 10{sup 6} A cm{sup -2} at 10 K in zero field. Although tiny cracks in the film were created by bending the sample on a curved surface with a radius of 1.4 mm, however, T{sub c}{sup 0} of the bent film was not affected and remained about 39 K, which indicates that the sample has a certain ductibility.

  4. Thickness dependence of microstructure in LaCaMnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gross, G.M.; Razavi, F.S.; Praus, R.B.; Habermeier, H.-U. E-mail: huh@servix.mpi-stuttgart.mpg.de

    2000-03-01

    Introducing biaxial strain in doped lanthanum manganite thin films is an excellent tool to modify the electrical and transport properties systematically by controlled changes of the microstructure on an atomic scale. We deposited La{sub 2/3}Ca{sub 1/3}MnO{sub 3} thin films onto SrTiO{sub 3} single-crystal substrates under reproducible conditions in an optimized pulsed laser deposition process. A thickness range of 40 to 500 nm was chosen for the manganite layers to investigate the variation of the average lattice parameters with thickness using X-ray diffraction. We re-investigated the samples after annealing to determine the structural aspects of the relaxation behavior of the layers. A second set of samples was prepared with an analogous in situ annealing process. AFM was applied to examine the morphology and grain size of the layers. Due to a thermally induced strain relaxation process the thicker films show a gradual approach of the out-of-plane lattice constant to the bulk ceramic value. Further relaxation could be achieved with an annealing at 900 deg. C for 1 h. Lattice parameter changes with varying thickness and annealing processes are correlated with transport and magnetic properties.

  5. Analysis of flow development in centrifugal atomization: Part I. Film thickness of a fully spreading melt

    Science.gov (United States)

    Zhao, Y. Y.

    2004-09-01

    Centrifugal atomization of metal melts is a cost-effective process for powder production and spray deposition. The properties of the as-produced powder and deposit are determined primarily by the characteristics of the atomized droplets, which in turn are largely dependent on the flow development of the melt on the atomizer. This paper develops a model for analysing the flow development of a fully spreading melt on and off the atomizing cup. The model can be used to calculate the velocity and film thickness of the melt as a function of melt volume flow rate, cup rotation speed, cup radius and cup slope angle, as well as to predict the trajectory of the spray off the cup. The model implies that the disintegration of a fully spreading melt takes place in the region just off the cup edge and the film thickness at the cup edge is a critical factor determining the sizes of the resultant droplets. The film thickness at the cup edge is shown to decrease with decreasing volume flow rate, with increasing cup rotation speed, with increasing cup radius and with decreasing cup slope angle.

  6. Ultrathin magnesia films as support for molecules and metal clusters: Tuning reactivity by thickness and composition

    Energy Technology Data Exchange (ETDEWEB)

    Vaida, Mihai E.; Bernhardt, Thorsten M. [Institute of Surface Chemistry and Catalysis, University of Ulm (Germany); Barth, Clemens [CINAM-CNRS, Marseille (France); Esch, Friedrich; Heiz, Ueli [Department of Chemistry, Technical University of Munich, Garching (Germany); Landman, Uzi [School of Physics, Georgia Institute of Technology, Atlanta, Georgia (United States)

    2010-05-15

    Ultrathin metal oxide films have attracted considerable interest in recent years as versatile substrate for the design of nanocatalytic model systems. In particular, it has been proposed theoretically and confirmed experimentally that the electronic structure of adsorbates can be influenced by the layer thickness and the stoichiometry, i.e., the type and number of defects, of the oxide film. This has important consequences on the chemical reactivity of the oxide surface itself and of oxide supported metal clusters. It also opens new possibilities to influence and to control chemical reactions occurring at the surface of these systems. The present feature focuses on very recent experiments that illustrate the effects of a proper adjustment of layer thickness and composition of ultrathin MgO(100) films on chemical transformations. On the magnesia surface itself, the photodissociation dynamics of methyl iodide molecules is investigated via femtosecond-laser pump-probe mass spectrometry. Furthermore, the catalytic oxidation of carbon monoxide at mass-selected Au{sub 20} clusters deposited on magnesia is explored through temperature programmed reaction measurements. In the latter case, detailed first principles calculations are able to correlate the experimentally observed reactivity with structural dimensionality changes that are induced by the changing thickness and composition of the magnesia support. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Electrochemical Properties of RuO2 Electrodes as a Function of Thin Film Thickness

    Science.gov (United States)

    Li, Xiang; Xiong, Jian; Luo, Yuan; Luo, Yongmei

    2017-09-01

    A thin film RuO2 electrode was prepared by spin coating thermal decomposition methods. Precursor containing RuCl3·nH2O and isopropyl alcohol was coated on tantalum substrate and annealed at 250-260°C for 3 h to form a thin film RuO2 electrode of about 2.5 μm, 5.6 μm, 11.4 μm, and 14.5 μm in thickness. X-ray diffraction revealed that peak intensities of those electrodes were similar and close to each other. Scanning electron microscopy showed that thin film of 5.6 μm in thickness was dense and free of cracks. Electrochemical performances of electrodes were examined by cyclic voltammetry, galvanostatic charge/discharge as well as equivalent series resistance. The highest specific capacitance value of 725 F g-1 was registered for the electrode of 5.6 μm in thickness with good constant current charge/discharge and equivalent series resistance of 0.36 Ω as well as cyclic stability.

  8. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system.

    Science.gov (United States)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun

    2013-12-01

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  9. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2013-12-15

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules’ GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  10. Response of Ag Thick Film Microstripline due to Superstrate Strontium Substituted Bismuth Manganites

    Directory of Open Access Journals (Sweden)

    S.N. Mathad

    2014-06-01

    Full Text Available The purpose of this paper is to describe the use of strontium-substituted bismuth manganites bulk ceramic superstrate on Ag thick film microstripline, to modify its response and measure complex permittivity as a function of strontium. Bismuth strontium manganites (Bi1 − xSrxMnO3 have been synthesized by solid state sintering technique. The perturbation obtained in the transmittance and reflectance of thick film microstripline due to the Bi1 − xSrxMnO3 (0.20  x  0.50 overlay has been used to obtain the permittivity at microwave frequencies in X and Ku band range. Due to the overlay of Bismuth strontium manganites (BSM pellets a substantial increase in the effective dielectric constant was observed in X band more compared to Ku band. The in-touch overlay method provides ease loading and unloading. The perturbation obtained in the transmittance and reflectance of thick film microstripline due to the bismuth strontium manganites overlay has been used to obtain the permittivity.

  11. Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    D R Patil; L A Patil; D P Amalnerkar

    2007-12-01

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al2O3 into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.

  12. Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

    2015-12-15

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  13. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids. [for space shuttle main engine bearings

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-01-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  14. Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br [Departamento de Física e Química, Faculdade de Engenharia de Ilha Solteira, UNESP—Univ. Estadual Paulista, 15385-000 Ilha Solteira, SP (Brazil); Shvartsman, V. V. [Institute for Materials Science, University Duisburg-Essen, 45141 Essen (Germany); Shur, V. Ya. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kholkin, A. L. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Department of Physics and CICECO—Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal)

    2016-08-07

    Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

  15. Thickness-dependent cooperative aging in polycrystalline films of antiferromagnet CoO

    Science.gov (United States)

    Ma, Tianyu; Cheng, Xiang; Boettcher, Stefan; Urazhdin, Sergei; Novozhilova, Lydia

    2016-07-01

    We demonstrate that thin polycrystalline films of antiferromagnet CoO, in bilayers with ferromagnetic Permalloy, exhibit slow power-law aging of their magnetization state. The aging characteristics are remarkably similar to those previously observed in thin epitaxial Fe50Mn50 films, indicating that these behaviors are likely generic to ferromagnet/antiferromagnet bilayers. In very thin films, aging is observed over a wide temperature range. In thicker CoO, aging effects become reduced at low temperatures. Aging entirely disappears for large CoO thicknesses. We also investigate the dependence of aging characteristics on temperature and magnetic history. Analysis shows that the observed behaviors are inconsistent with the Neel-Arrhenius model of thermal activation, and are instead indicative of cooperative aging of the antiferromagnet. Our results provide new insights into the mechanisms controlling the stationary states and dynamics of ferromagnet/antiferromagnet bilayers, and potentially other frustrated magnetic systems.

  16. Study of Microstructural Parameters of Screen Printed In2O3 Thick Film Sensors

    Directory of Open Access Journals (Sweden)

    Sushma KULKARNI

    2011-08-01

    Full Text Available Indium Oxide (In2O3 thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 650 0C to 950 0C for two hours in air atmosphere. The material characterization was done using X-ray energy dispersive analysis (EDAX, X-ray diffraction (XRD and a scanning electron microscope (SEM. The deposited films were polycrystalline in nature with a preferred orientation along the (222 plane. Structural parameters such as the crystallite size, texture coefficient, RMS microstrain, dislocation density and stacking fault probability have been studied. The results indicate that reported parameters changes with firing temperature. The crystallite size changes from 26.8 nm to 31 nm with respect to the firing temperature.

  17. Narrow thermal hysteresis of NiTi shape memory alloy thin films with submicrometer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-09-15

    NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2 to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.

  18. Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing

    Energy Technology Data Exchange (ETDEWEB)

    Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Jiang, Weilin; Varga, Tamas; Nachimuthu, Ponnusamy; Engelhard, Mark H.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Kayani, Asghar N.; Prasad, Shalini

    2011-01-01

    High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria doped ceria as the oxygen sensing material. Desired signal to noise ratio can be achieved in a material system with high conductivity. From previous studies it is established that 6 atomic percent samarium doping is the optimum concentration for thin film samaria doped ceria to achieve high ionic conductivity. In this study, the conductivity of the 6 atomic percent samaria doped ceria thin film is measured as a function of the sensing film thickness. Hysteresis and dynamic response of this sensing platform is tested for a range of oxygen pressures from 0.001 Torr to 100 Torr for temperatures above 673 K. An attempt has been made to understand the physics behind the thickness dependent conductivity behavior of this sensing platform by developing a hypothetical operating model and through COMSOL simulations. This study can be used to identify the parameters required to construct a fast, reliable and compact high temperature oxygen sensor.

  19. Performance Evaluation of an Oxygen Sensor as a Function of the Samaria Doped Ceria Film Thickness

    Energy Technology Data Exchange (ETDEWEB)

    Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Nachimuthu, Ponnusamy; Engelhard, Mark H.; Shutthanandan, V.; Jiang, Weilin; Thevuthasan, Suntharampillai; Kayani, Asghar N.; Prasad, Shalini

    2010-12-01

    The current demand in the automobile industry is in the control of air-fuel mixture in the combustion engine of automobiles. Oxygen partial pressure can be used as an input parameter for regulating or controlling systems in order to optimize the combustion process. Our goal is to identify and optimize the material system that would potentially function as the active sensing material for such a device that monitors oxygen partial pressure in these systems. We have used thin film samaria doped ceria (SDC) as the sensing material for the sensor operation, exploiting the fact that at high temperatures, oxygen vacancies generated due to samarium doping act as conducting medium for oxygen ions which hop through the vacancies from one side to the other contributing to an electrical signal. We have recently established that 6 atom % Sm doping in ceria films has optimum conductivity. Based on this observation, we have studied the variation in the overall conductivity of 6 atom % samaria doped ceria thin films as a function of thickness in the range of 50 nm to 300 nm at a fixed bias voltage of 2 volts. A direct proportionality in the increase in the overall conductivity is observed with the increase in sensing film thickness. For a range of oxygen pressure values from 1 mTorr to 100 Torr, a tolerable hysteresis error, good dynamic response and a response time of less than 10 seconds was observed

  20. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    Science.gov (United States)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  1. Space Charge Distribution Measurement in Insulation Film with Thickness of Several Tens μm

    Science.gov (United States)

    Hamano, Akihiro; Tanaka, Yasuhiro; Maeno, Takashi

    Since electronic equipment is required to be smaller and lighter, an insulating material for such equipment is consequently required to be thinner. However, under a certain DC voltage, the electric field in it becomes relatively higher according to the insulating material becomes thinner. Therefore, the insulating performance under high electric field must be important in such thin films. On the other hand, it is said that a space charge accumulation in them under DC high electric field is important because sometimes an electrical breakdown occurs in them due to an enhancement of electric field induced by the accumulated space charge. To investigate the characteristics of the space charge accumulation in them, PEA (Pulsed Electroacoustic) method is usually used. However, a spatial resolution of ordinary PEA system is not enough to observe the space charge distribution in thin films with thickness of several tens μm. Therefore, a new measurement system with high positional resolution is developed by making a thin piezo-electric film that is used as a sensor for PEA system. The obtained resolution of the developed system is 4 μm, and it is used for a typical measurement in LDPE film with thickness of 40 μm.

  2. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in [Functional Nanomaterial Research lab, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India)

    2016-05-06

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  3. Residual stress distribution in thin diamond films and its effects on preparation of thick freestanding diamond films using DC arc plasma jet operated at gas recycling mode

    Institute of Scientific and Technical Information of China (English)

    LI Cheng-ming; LI Hui-qing; CHEN Guan-chao; L(U) Fan-xiu; TONG Yu-mei; TANG Wei-zhong

    2004-01-01

    Diamond films produced by chemical vapor deposition show excellent properties. The residual stress distribution of diamond thin films deposited by DC arc plasma jet at recycling mode was analyzed by line shifts of micro Raman spectroscopy. The results show that the compressive residual stress concentrates at the film's edge. The experimental observations show that cracks initiate at the edge of the diamond thick wafer and then propagate towards the center. The residual stress of diamond films increases with the increase of methane concentration and deposition temperature. The difference of adhesion in close area causes more shear stress and brings about the two sides of crack being not at same level. To suppress crack probability, it is favourable for increasing the film thickness and selecting a substrate with lower coefficient of thermal expansion and lower adhesion. The effects of the residual stress distribution on thick diamond films detachment were discussed.

  4. Research on film thickness of conductive line formed by laser micro-fine cladding and flexibly direct writing technique

    Institute of Scientific and Technical Information of China (English)

    Huiling Li(李慧玲); Xiaoyan Zeng(曾晓雁); Huifen Li(李惠芬); Xiangyou Li(李祥友); Yiqun Chen(陈佚群)

    2004-01-01

    The conventional technology could not fulfill the rapidly growing need for fine conductive lines for its inherent limits. Therefore, in this study laser micro-fine cladding and flexibly direct writing technique is used to obtain conductive lines with high precision and reliability. In the case of different substrates and parameters, film thickness will be different. Film thickness directly influences the reliability and stability of conductive lines with exception of quality and running speed. Therefore, we focus on developing the optimal parameters for the different substrates to achieve expected film thickness and make conductive lines have good performance and quality.

  5. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  6. A novel in-situ technique to fabricate thin films with controlled lateral thickness modulations

    Science.gov (United States)

    Zhang, Chi

    Surfaces having well-defined morphologies like periodic arrays of dots or lines, promise useful applications. Magnetic nanodots of Co and Fe-alloys are useful in patterned magnetic recording media. Well controlled grain size and surface area of nanostructured TiO2 are useful to develop efficient photocatalysts. However, there is a continuing need to develop techniques to make such surfaces in a simple and economical manner. In this thesis, a previously unexplored in-situ approach to assemble lateral patterns in thin films was proposed and investigated. Simple models of film growth on a defect free surface show that under uniform areal deposition rates and surface temperatures, nucleation occurs at random positions on the surface. We proposed that by exposing a growing thin film to a spatially varying surface temperature distribution, nucleation and growth can be confined to specific spatial locations. Consequently, a film with a desired pattern or thickness modulation could be achieved. The experimental approach consists of irradiating the substrate surface with a laser interference pattern simultaneous with physical vapor deposition (PVD). To perform such film growth experiments, a vibration minimized and multifunctional ultra-high vacuum chamber was integrated with a Nd:YAG laser. The laser output is a beam of 266 nm with a coherence length of approximately 2 m and an area of ˜0.8 x 0.8 cm2. The laser has a pulse width of 9 ns, a constant repetition rate of 50 Hz, with a rated peak output of 44 mJ/pulse. The typical laser energy density used in this work was about 10 mJ/cm2. Since sub-micron length scales were of interest, vibration studies were performed by recording the interference patterns on kapton films. Results from the kapton films, measurements using a shear accelerometer and recent growth results showed that peak-to-peak vibration amplitudes on the substrate surface were less than +/-25 nm. Well-established PVD techniques like pulsed laser deposition

  7. Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films

    Directory of Open Access Journals (Sweden)

    Teng Tan

    2015-04-01

    Full Text Available For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001 SiC substrate either directly (for epitaxial films or with a MgO buffer layer (for polycrystalline films. When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field.

  8. Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

    Science.gov (United States)

    Das, M. R.; Mukherjee, A.; Mitra, P.

    2017-09-01

    We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

  9. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  10. Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.

    Science.gov (United States)

    Yuan, Zhongcheng; Yang, Yingguo; Wu, Zhongwei; Bai, Sai; Xu, Weidong; Song, Tao; Gao, Xingyu; Gao, Feng; Sun, Baoquan

    2016-12-21

    Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within ∼300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to ∼800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.

  11. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

    2016-08-15

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  12. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  13. Self-assembly of monolayer-thick alumina particle-epoxy composite films.

    Science.gov (United States)

    Jackson, Bryan R; Liu, Xiangyuan; McCandlish, Elizabeth F; Riman, Richard E

    2007-11-06

    Monolayer-thick composite films composed of alpha-alumina and Spurr's epoxy were prepared via a self-assembly process known as fluid forming. The process makes use of a high-spreading-tension fluid composed of volatile and nonvolatile components to propel particles across the air-water interface within a water bath. Continuous addition of the particle suspension builds a 2D particle film at the air-water interface. The spreading fluid compresses the film into a densely packed array against a submerged substrate. The assembled monolayer is deposited onto the substrate by removing the substrate from the bath. A dispersion containing a narrow size distribution, 10 microm alpha-alumina particles, light mineral oil, and 2-propanol was spread at the air-water interface and the alumina particles were assembled into densely packed arrays with an aerial packing fraction (APF) of 0.88. However, when mineral oil was replaced by Spurr's epoxy nonuniform films with low packing density resulted. It was found that replacing 2-propanol with a mixture of 2-propanol and 1-butanol with a volume ratio of 4:1 produced uniform, densely packed alumina/epoxy composite films. The role of the solvent mixture will be discussed.

  14. Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

    Science.gov (United States)

    Figueroa, A. I.; Zhang, S. L.; Baker, A. A.; Chalasani, R.; Kohn, A.; Speller, S. C.; Gianolio, D.; Pfleiderer, C.; van der Laan, G.; Hesjedal, T.

    2016-11-01

    We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500 Å) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature Tc assumes a thickness-independent enhanced value of ≥43 K as compared with that of bulk MnSi, where Tc≈29 K . A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111] direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi—except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.

  15. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    Energy Technology Data Exchange (ETDEWEB)

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  16. Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2008-10-01

    Full Text Available Thick films of tin-oxide (SnO2 were deposited on alumina substrates employing screen-printing technique. The films were dried and fired at 680 0C for 30 minutes. The variation of D.C. resistance of thick films was measured in air as well as in H2S gas atmosphere as a function of temperature. The SnO2 films exhibit semiconducting behaviour. The SnO2 thick films studied were also showing decrease in resistance with increase of concentration of H2S gas. The film resistors showed the highest sensitivity to H2S gas at 350 0C. The XRD studies of the thick film indicate the presence of different phases of SnO2. The elemental analysis was confirmed by EDX spectra. The surface morphological study of the films was analyzed by SEM. The microstructure of the films was porous resulting from loosely interconnected small crystallites. The parameters such as grain size, activation energy, sensitivity and response time were described.

  17. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei-Ying; ZHONG Sheng; SUN Li-Jie; FU Zhu-Xi

    2008-01-01

    N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates.Thicknesses of ZnO films are altered by varying the deposition time from I h to 3 h.The electrical properties of these structures are analysed from capacitance-voltage ( C- V) and current-voltage (I- V) characteristics performed in a dark room.The results demonstrated that all the samples show strong rectifying behaviour.Photovoltalc property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current.It is found that photovoltages are kept to be almost constant of 32OmV along with the thickness while photocurrents changing a lot.The variation mechanism of the photovoltalc effect as a function of thickness of ZnO films is investigated.

  18. Microwave sintering of sol-gel composite films using a domestic microwave oven

    Science.gov (United States)

    Kobayashi, Makiko; Matsumoto, Makoto

    2016-07-01

    Feasibility study of sol-gel composite microwave sintering using a domestic microwave oven was carried out. Two kinds of lead zirconate titanate (PZT) powders were mixed with PZT sol-gel solution and the mixture was sprayed onto 3-mm-thick titanium substrate. The films were sintered by 700 W domestic oven for 10 min. Ultrasonic measurement was carried out in pulse-echo mode and clear multiple echoes were confirmed. It would be suitable method to fabricate high frequency broadband focused ultrasonic transducers. Further research is required to improve sintering degree.

  19. Facile production of thermoelectric bismuth telluride thick films in the presence of polyvinyl alcohol.

    Science.gov (United States)

    Lei, C; Burton, M R; Nandhakumar, I S

    2016-06-01

    Bismuth telluride is currently the best performing thermoelectric material for room temperature operations in commercial thermoelectric devices. We report the reproducible and facile production of 600 micron thick bismuth telluride (Bi2Te3) layers by low cost and room temperature pulsed and potentiostatic electrodeposition from a solution containing bismuth and tellurium dioxide in 2 M nitric acid onto nickel in the presence of polyvinyl alcohol (PVA). This was added to the electrolyte to promote thick layer formation and its effect on the structure, morphology and composition of the electrodeposits was investigated by SEM and EDX. Well adherent, uniform, compact and stoichiometric n-type Bi2Te3 films with a high Seebeck coefficient of up to -200 μV K(-1) and a high electrical conductivity of up to 400 S cm(-1) resulting in a power factor of 1.6 × 10(-3) W m(-1) K(-2) at film growth rates of 100 μm h(-1) for potentiostatic electrodeposition were obtained. The films also exhibited a well defined hexagonal structure as determined by XRD.

  20. Thickness-dependent structural arrangement in nano-confined imidazolium-based ionic liquid films.

    Science.gov (United States)

    Rouha, Michael; Cummings, Peter T

    2015-02-14

    A fundamental understanding of interfacial processes in nano-confined ionic liquids is crucial to increase the performance of modern energy storage devices. It is well-known that interfaces between electrodes and ionic liquids exhibit structures distinct from that of the bulk liquid. Following the recent interest in these systems, we studied the structure of thin ionic liquid films confined in flexible uncharged carbon nano-pores by using fully-atomistic molecular dynamics simulations. We show that the interfacial ions self-assemble into a closely-packed chequerboard-like pattern, formed by both cations and anions in direct contact with the pore wall, and that within this structure we find changes dependent on the thickness of the confined films. At low coverages a dense layer is formed in which both the imidazolium-ring and its alkyl-tail lie parallel to the pore wall. With increasing coverage the alkyl-chains reorient perpendicular to the surface, making space for additional ions until a densified highly ordered layer is formed. This wall-induced self-patterning into interfacial layers with significantly higher than bulk density is consistent with recent experimental and theoretical studies of similar systems. This work reveals additional molecular-level details on the effect of the film-thickness on the structure and density of the ionic liquid.