Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

Science.gov (United States)

Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

2017-09-01

Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

Directory of Open Access Journals (Sweden)

Cui Yan

2014-01-01

Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

PMN-PT-PZT composite films for high frequency ultrasonic transducer applications.

Science.gov (United States)

Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk

2012-06-01

We have successfully fabricated x (0.65PMN-0.35PT)-(1 - x )PZT ( x PMN-PT-(1 - x )PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol-gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of x PMN-PT-(1 - x )PZT films show better ferroelectric properties. A representative 0.9PMN-PT-0.1PZT thick film transducer is built. It has 200 MHz center frequency with a -6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.

PMN-PT–PZT composite films for high frequency ultrasonic transducer applications

Science.gov (United States)

Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K. Kirk

2013-01-01

We have successfully fabricated x(0.65PMN-0.35PT)–(1 − x)PZT (xPMN-PT–(1 − x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol–gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT–(1 − x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT–0.1PZT thick film transducer is built. It has 200 MHz center frequency with a −6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB. PMID:23750072

Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Borregaard, Louise M.

2012-01-01

This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been...

Experimental investigation into the effect of substrate clamping on the piezoelectric behaviour of thick-film PZT elements

Energy Technology Data Exchange (ETDEWEB)

Torah, R N; Beeby, S P; White, N M [Department of Electronics and Computer Science, University of Southampton, SO17 1BJ (United Kingdom)

2004-04-07

This paper details an experimental investigation of the clamping effect associated with thick-film piezoelectric elements printed on a substrate. The clamping effect reduces the measured piezoelectric coefficient, d{sub 33}, of the film. This reduction is due to the influence of the d{sub 31} component in the film when a deformation of the structure occurs, by either the direct or indirect piezoelectric effect. Theoretical analysis shows a reduction in the measured d{sub 33} of 62%, i.e. a standard bulk lead zirconate titanate (PZT)-5H sample with a manufacturer specified d{sub 33} of 593pC/N would fall to 227.8pC/N. To confirm this effect, the d{sub 33} coefficients of five thin bulk PZT-5H samples of 220 {mu}m thickness were measured before and after their attachment to a metallized 96% alumina substrate. The experimental results show a reduction in d{sub 33} of 74% from 529pC/N to 139pC/N. The theoretical analysis was then applied to existing University of Southampton thick-film devices. It is estimated that the measured d{sub 33} value of 131pC/N of the thick-film devices is the equivalent of an unconstrained d{sub 33} of 345pC/N.

Influence of PZT Coating Thickness and Electrical Pole Alignment on Microresonator Properties.

Science.gov (United States)

Janusas, Giedrius; Ponelyte, Sigita; Brunius, Alfredas; Guobiene, Asta; Vilkauskas, Andrius; Palevicius, Arvydas

2016-11-10

With increasing technical requirements in the design of microresonators, the development of new techniques for lightweight, simple, and inexpensive components becomes relevant. Lead zirconate titanate (PZT) is a powerful tool in the formation of these components, allowing a self-actuation or self-sensing capability. Different fabrication methods lead to the variation of the properties of the device itself. This research paper covers the fabrication of a novel PZT film and the investigations of its chemical, surface, and dynamic properties when film thickness is varied. A screen-printing technique was used for the formation of smooth films of 60 µm, 68 µm, and 25 µm thickness. A custom-made poling technique was applied to enhance the piezoelectric properties of the designed films. However, poling did not change any compositional or surface characteristics of the films; changes were only seen in the electrical ones. The results showed that a thinner poled PZT film having a chemical composition with the highest amount of copper and zirconium led to better electrical characteristics (generated voltage of 3.5 mV).

Nonlinear current-voltage behavior in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

2017-05-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

PZT Thin-Film Micro Probe Device with Dual Top Electrodes

Science.gov (United States)

Luo, Chuan

should be less than 3 mm in order to guarantee the first resonant frequency above 60 kHz. Finally, a package for the PZT thin-film micro probe device is developed to ensure its proper function in an aqueous environment, such as inside of cochlea. The package is an insulation layer of parylene coating on the probe. A finite element analysis indicates that a coating thickness of less than 1 mum will reduce the PZT diaphragm displacement by less than 10%. A special fixture is designed to hold a large number of probes for parylene deposition of a thickness of 250 nm. A packaged probe is then submerged in deionized water and functions properly for at least 55 hours. Displacement and impedance of the probe are measured via a laser Doppler vibrometer and an impedance analyzer, respectively. Experimental results show that displacement of the PZT diaphragm increases about 30% in two hours, after the probe is submerged in the deionized water. The impedance measurement shows consistent trends. A hypothesis to explain this unusual phenomenon is diffusion of water molecules into the PZT thin film. High-resolution SEM images of the probe indicate presence of numerous nano-pores in the surface of the PZT thin film, indirectly confirming the hypothesis. Keywords: PZT, Thin-Film, Dual Electrodes, Parylene Coating, Aqueous Environment, Cochlear Implant

The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films

International Nuclear Information System (INIS)

Li Jianjun; Li Ping; Zhang Guojun; Yu Jun; Wu Yunyi; Wen Xinyi

2011-01-01

A series of PbZr 0.58 Ti 0.42 O 3 (PZT) thin films with various Bi 3.25 La 0.75 Ti 3 O 12 (BLT) buffer layer thicknesses were deposited on Pt/TiO 2 /SiO 2 /p-Si(100) substrates by RF magnetron sputtering. The X-ray diffraction measurements of PZT film and PZT/BLT multilayered films illustrate that the pure PZT film shows (111) preferential orientation, and the PZT/BLT films show (110) preferential orientation with increasing thickness of the BLT layer. There are no obvious diffraction peaks for the BLT buffer layer in the multilayered films, for interaction effect between the bottom BLT and top PZT films during annealing at the same time. From the surface images of field-emission scanning electron microscope, there are the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples. The growth direction and grain size have significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics of PZT and PZT/BLT films suggest that 30-nm-thick BLT is just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results with that of PZT/Pt/TiO 2 /SiO 2 /p-Si(100) basic structured film suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

Science.gov (United States)

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

PZT Thin Film Piezoelectric Traveling Wave Motor

Science.gov (United States)

Shen, Dexin; Zhang, Baoan; Yang, Genqing; Jiao, Jiwei; Lu, Jianguo; Wang, Weiyuan

1995-01-01

With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.

Science.gov (United States)

Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa

2013-04-01

The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.

PZT piezoelectric films on glass for Gen-X imaging

Science.gov (United States)

Wilke, Rudeger H. T.; Trolier-McKinstry, Susan; Reid, Paul B.; Schwartz, Daniel A.

2010-09-01

The proposed adaptive optics system for the Gen-X telescope uses piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. The low softening transition of the glass substrates imposes several processing challenges that require the development of new approaches to deposit high quality PZT thin films. Synthesis and optimization of chemical solution deposited 1 μm thick films of PbZr0.52Ti0.48O3 on small area (1 in2) and large area (16 in2) Pt/Ti/glass substrates has been performed. In order to avoid warping of the glass at temperatures typically used to crystallize PZT films ({700°C), a lower temperature, two-step crystallization process was employed. An {80 nm thick seed layer of PbZr0.30Ti0.70O3 was deposited to promote the growth of the perovskite phase. After the deposition of the seed layer, the films were annealed in a rapid thermal annealing (RTA) furnace at 550°C for 3 minutes to nucleate the perovskite phase. This was followed by isothermal annealing at 550°C for 1 hour to complete crystallization. For the subsequent PbZr0.52Ti0.48O3 layers, the same RTA protocol was performed, with the isothermal crystallization implemented following the deposition of three PbZr0.52Ti0.48O3 spin-coated layers. Over the frequency range of 1 kHz to 100 kHz, films exhibit relative permittivity values near 800 with loss tangents below 0.07. Hysteresis loops show low levels of imprint with coercive fields of 40-50 kV/cm in the forward direction and 50-70 kV/cm in the reverse direction. The remanent polarization varied from 25-35 μC/cm2 and e31,f values were approximately -5.0 C/m2. In scaling up the growth procedure to large area films, where warping becomes more pronounced due to the increased size of the substrate, the pyrolysis and crystallization conditions were performed in a box furnace to improve the temperature uniformity. By depositing films on both sides of the glass substrate, the tensile stresses are balanced, providing a

Hydrothermally synthesized PZT film grown in highly concentrated KOH solution with large electromechanical coupling coefficient for resonator

Science.gov (United States)

Feng, Guo-Hua; Lee, Kuan-Yi

2017-12-01

This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal-oxide-semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.

Thickness dependence of electrical properties in (0 0 1) oriented lead zirconate titanate films by laser ablation

International Nuclear Information System (INIS)

Zhu, T.J.; Lu, L.; Lai, M.O.; Soh, A.K.

2007-01-01

Highly (0 0 1)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with LaNiO 3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level

Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film.

Science.gov (United States)

Zhu, Benpeng; Xu, Jiong; Li, Ying; Wang, Tian; Xiong, Ke; Lee, Changyang; Yang, Xiaofei; Shiiba, Michihisa; Takeuchi, Shinichi; Zhou, Qifa; Shung, K Kirk

2016-03-01

Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d 33 = 270pC/N and k t = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

Structural, dielectric and ferroelectric characterization of PZT thin films

Directory of Open Access Journals (Sweden)

Araújo E.B.

1999-01-01

Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

International Nuclear Information System (INIS)

Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

1990-01-01

In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

Science.gov (United States)

Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

2012-12-01

In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

DEFF Research Database (Denmark)

Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

2010-01-01

and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

Directory of Open Access Journals (Sweden)

Benpeng Zhu

2016-03-01

Full Text Available Single-beam acoustic tweezers (SBAT, used in laboratory-on-a-chip (LOC device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51 was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9, demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

Energy Technology Data Exchange (ETDEWEB)

Zhu, Benpeng, E-mail: benpengzhu@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xu, Jiong; Yang, Xiaofei [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Ying; Lee, Changyang; Zhou, Qifa; Shung, K. Kirk [Department of Biomedical Engineering and NIH Transducer Resource Center, University of Southern California, Los Angeles, California 90089-1111 (United States); Wang, Tian; Xiong, Ke [Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072 (China); Shiiba, Michihisa; Takeuchi, Shinichi [Medical Engineering Course, Graduate School of Engineering, Toin University of Yokohama, Yokohama 225-8501 (Japan)

2016-03-15

Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d{sub 33} = 270 pC/N and k{sub t} = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50 MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

Very high frequency (beyond 100 MHz) PZT kerfless linear arrays.

Science.gov (United States)

Wu, Da-Wei; Zhou, Qifa; Geng, Xuecang; Liu, Chang-Geng; Djuth, Frank; Shung, K Kirk

2009-10-01

This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-microm PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-microm PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss).

Electro-Caloric Properties of BT/PZT Multilayer Thin Films Prepared by Sol-Gel Method.

Science.gov (United States)

Kwon, Min-Su; Lee, Sung-Gap; Kim, Kyeong-Min

2018-09-01

In this study, Barium Titanate (BT)/Lead Zirconate Titanate (PZT) multilayer thin films were fabricated by the spin-coating method on Pt (200 nm)/Ti (10 nm) SiO2 (100 nm)/P-Si (100) substrates using BaTiO3 and Pb(Zr0.90Ti0.10)O3 metal alkoxide solutions. The coating and heating procedure was repeated several times to form the multilayer thin films. All of BT/PZT multilayer thin films show X-ray diffraction patterns typical to a polycrystalline perovskite structure and a uniform and void free grain microstructure. The thickness of the BT and PZT film by one-cycle of drying/sintering was approximately 50 nm and all of the films consisted of fine grains with a flat surface morphology. The electrocaloric properties of BT/PZT thin films were investigated by indirect estimation. The results showed that the temperature change ΔT can be calculated as a function of temperature using Maxwell's relation; the temperature change reaches a maximum value of ~1.85 °C at 135 °C under an applied electric field of 260 kV/cm.

Far infrared and Raman response in tetragonal PZT ceramic films

Energy Technology Data Exchange (ETDEWEB)

Buixaderas, E.; Kadlec, C.; Vanek, P.; Drnovsek, S.; Ursic, H.; Malic, B.

2015-07-01

PbZr{sub 0}.38Ti{sub 0}.62O{sub 3} and PbZr{sub 0}.36Ti{sub 0}.64{sub O}3 thick films deposited by screen printing on (0 0 0 1) single crystal sapphire substrates and prepared at two different sintering temperatures, were studied by Fourier-transform infrared reflectivity, time-domain TH{sub z} transmission spectroscopy and micro-Raman spectroscopy. The dielectric response is discussed using the Lichtenecker model to account for the porosity of the films and to obtain the dense bulk dielectric functions. Results are compared with bulk tetragonal PZT 42/58 ceramics. The dynamic response in the films is dominated by an overdamped lead-based vibration in the TH{sub z} range, as known in PZT, but its evaluated dielectric contribution is affected by the porosity and roughness of the surface. (Author)

PVDF-PZT nanocomposite film based self-charging power cell.

Science.gov (United States)

Zhang, Yan; Zhang, Yujing; Xue, Xinyu; Cui, Chunxiao; He, Bin; Nie, Yuxin; Deng, Ping; Lin Wang, Zhong

2014-03-14

A novel PVDF-PZT nanocomposite film has been proposed and used as a piezoseparator in self-charging power cells (SCPCs). The structure, composed of poly(vinylidene fluoride) (PVDF) and lead zirconate titanate (PZT), provides a high piezoelectric output, because PZT in this nanocomposite film can improve the piezopotential compared to the pure PVDF film. The SCPC based on this nanocomposite film can be efficiently charged up by the mechanical deformation in the absence of an external power source. The charge capacity of the PVDF-PZT nanocomposite film based SCPC in 240 s is ∼0.010 μA h, higher than that of a pure PVDF film based SCPC (∼0.004 μA h). This is the first demonstration of using PVDF-PZT nanocomposite film as a piezoseparator for SCPC, and is an important step for the practical applications of SCPC for harvesting and storing mechanical energy.

Ga+ implantation in a PZT film during focused ion beam micro-machining

International Nuclear Information System (INIS)

Wollschlaeger, Nicole; Oesterle, Werner; Haeusler, Ines; Stewart, Mark

2015-01-01

The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga + - ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90 and 1 ). The thicknesses of the corresponding Ga + -implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga + -implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

Science.gov (United States)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Ga{sup +} implantation in a PZT film during focused ion beam micro-machining

Energy Technology Data Exchange (ETDEWEB)

Wollschlaeger, Nicole; Oesterle, Werner; Haeusler, Ines [Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin (Germany); Stewart, Mark [National Physical Laboratory, Hampton Road, Teddington Middlesex TW 11 0LW (United Kingdom)

2015-03-01

The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga{sup +}- ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90 and 1 ). The thicknesses of the corresponding Ga{sup +}-implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga{sup +}-implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

In situ X-ray diffraction studies on the piezoelectric response of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Davydok, A., E-mail: davydok@mpie.de [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Max-Planck-Institut für Eisenforschung, Department Structure and Nano-/Micromechanics of Materials, D-40237 Düsseldorf (Germany); Cornelius, T.W. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France); Mocuta, C. [SOLEIL Synchrotron, DiffAbs beamline, L' Orme des Merisiers, Saint-Aubin - BP 48, 91192 Gif-sur-Yvette Cedex (France); Lima, E.C. [Universidade Federal do Tocantins, 77500-000 Porto Nacional, TO (Brazil); Araujo, E.B. [Departamento de Fisica e Quimica, Universidade Estadual Paulista, Av. Brasil, 56 Centro, 15385-000 Ilha Solteira, SP (Brazil); Thomas, O. [Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, 13397 Marseille (France)

2016-03-31

Piezoelectric properties of randomly oriented self-polarized PbZr{sub 0.50}Ti{sub 0.50}O{sub 3} (PZT) thin films were investigated using in situ synchrotron X-ray diffraction. Possibilities for investigating the piezoelectric effect using micro-sized hard X-ray beams are demonstrated and perspectives for future dynamical measurements on PZT samples with variety of compositions and thicknesses are given. Studies performed on the crystalline [100, 110] directions evidenced piezoelectric anisotropy. The piezoelectric coefficient d{sub 33} was calculated in terms of the lab reference frame (d{sub perp}) and found to be two times larger along the [100] direction than along the [110] direction. The absolute values for the d{sub perp} amount to 120 and 230 pm/V being in good agreement with experimental and theoretical values found in literature for bulk PZT ceramics. - Highlights: • We performed in situ synchrotron X-ray diffraction studies on (PZT) thin films. • We discuss anisotropy of piezo effect in different crystallographic directions. • Perpendicular component Piezo coefficient of thin PZT layer is defined.

Characterization of PZT thin films on metal substrates; Charakterisierung von PZT-Duennschichten auf Metallsubstraten

Energy Technology Data Exchange (ETDEWEB)

Dutschke, A.

2008-02-02

Lead zirconate titanate (PbZr{sub x}Ti{sub 1-x}O{sub 3},PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric

Microscopic local fatigue in PZT thin films

International Nuclear Information System (INIS)

Li, B S; Wu, A; Vilarinho, P M

2007-01-01

The reduction in switchable polarization during fatigue largely limits the application of PZT thin films in ferroelectric nonvolatile memories. So, it is very important to understand the fatigue mechanism in PZT films, especially at a nanoscale level. In this paper, nanoscale fatigue properties in PZT thin films have been studied by piezoresponse force microscopy and local piezoloops. It has been found that a piezoloop obtained on a fatigued point exhibits a much more pinched shape and a local imprint phenomenon is observed after severe fatigue. Furthermore, the domain structure evolves from a simple single-peak profile to a complex fluctuant one. However, there is only some shift of the piezoloop when a unipolar field with the same amplitude is applied on the film. The available experimental data show that there exist obvious domain wall pinning and injection of electrons into the film during fatigue. Finally, a schematic illustration is suggested to explain the possible fatigue mechanism

Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

Energy Technology Data Exchange (ETDEWEB)

Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

2010-02-15

The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil.

Science.gov (United States)

Palneedi, Haribabu; Maurya, Deepam; Geng, Liwei D; Song, Hyun-Cheol; Hwang, Geon-Tae; Peddigari, Mahesh; Annapureddy, Venkateswarlu; Song, Kyung; Oh, Yoon Seok; Yang, Su-Chul; Wang, Yu U; Priya, Shashank; Ryu, Jungho

2018-04-04

Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O 3 (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures. Laser-induced crystallinity improvement in the PZT thick film led to enhanced dielectric, ferroelectric, and magnetoelectric properties of the PZT/Ni composite. A high self-biased ME response on the order of 3.15 V/cm·Oe was obtained from the laser-annealed PZT/Ni film heterostructure. This value corresponds to a ∼2000% increment from the ME response (0.16 V/cm·Oe) measured from the as-deposited PZT/Ni sample. This result is also one of the highest reported values among similar ME composite systems. The tunability of self-biased ME coupling in PZT/Ni composite has been found to be related to the demagnetization field in Ni, strain mismatch between PZT and Ni, and flexural moment of the laminate structure. The phase-field model provides quantitative insight into these factors and illustrates their contributions toward the observed self-biased ME response. The results present a viable pathway toward designing and integrating ME components for a new generation of miniaturized tunable electronic devices.

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

Science.gov (United States)

Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

2013-05-10

Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

Characterization of PZT thin films on metal substrates

International Nuclear Information System (INIS)

Dutschke, A.

2008-01-01

Lead zirconate titanate (PbZr x Ti 1-x O 3 ,PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric state due to

Screen printed thick film based pMUT arrays

DEFF Research Database (Denmark)

Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

2008-01-01

This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

Design, Modeling and Optimization of a Piezoelectric Pressure Sensor based on a Thin-Film PZT Membrane Containing Nanocrystalline Powders

Directory of Open Access Journals (Sweden)

Vahid MOHAMMADI

2009-11-01

Full Text Available In this paper fabrication of a 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 thin film has been presented and then a pressure sensor based on multilayer thin-film PZT diaphragm contain of Lead Zirconate Titanate nanocrystalline powders was designed, modeled and optimized. Dynamics characteristics of this multilayer diaphragm have been investigated by ANSYS® FE software. By this simulation the effective parameters of the multilayer PZT diaphragm for improving the performance of a pressure sensor in different ranges of pressure are optimized. The optimized thickness ratio of PZT layer to SiO2 was given in the paper to obtain the maximum deflection of the multilayer thin-film PZT diaphragm. A 0-3 ceramic/ceramic composite lead zirconate titanate, Pb(Zr0.52Ti0.48O3 film has been developed to fabricate the pressure sensor by a hybrid sol gel process. PZT nanopowders fabricated via conventional sol gel method and uniformly dispersed in PZT precursor solution by an attrition mill. XRD analysis shows that perovskite structure would be formed due to the presence of a significant amount of ceramic nanopowders. This texture has a good effect on piezoelectric properties of perovskite structure. The film forms a strongly bonded network and less shrinkage occurs, so the films do not crack during process. Also the aspect ratio through this process would be increased. SEM micrographs indicated that PZT films were uniform, crack free and have a composite microstructure and a piezoelectric coefficient d31 of -40 pC.N-1 and d33 ranged from 50pm.N-1 to 60pm.N-1.

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Science.gov (United States)

Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

2009-01-01

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

International Nuclear Information System (INIS)

Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

2009-01-01

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Dielectric and acoustical high frequency characterisation of PZT thin films

International Nuclear Information System (INIS)

Conde, Janine; Muralt, Paul

2010-01-01

Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Dielectric and acoustical high frequency characterisation of PZT thin films

Science.gov (United States)

Conde, Janine; Muralt, Paul

2010-02-01

Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

Science.gov (United States)

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible PZT Thin Film Tactile Sensor for Biomedical Monitoring

Directory of Open Access Journals (Sweden)

Wen-Jong Wu

2013-04-01

Full Text Available This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.

Flexible PZT thin film tactile sensor for biomedical monitoring.

Science.gov (United States)

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-04-25

This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.

Dielectric and acoustical high frequency characterisation of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

2010-02-15

Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Improvement in fatigue property for a PZT ferroelectric film device with SRO electrode film prepared by chemical solution deposition

International Nuclear Information System (INIS)

Miyazaki, H.; Miwa, Y.; Suzuki, H.

2007-01-01

PZT films with (1 0 0) and (1 1 0) orientation were prepared by spin coating using the chemical solution deposition (CSD) method on an SRO/Si or a Pt/Ti/SiO 2 /Si substrate. The remnant polarization and the saturation polarization of the PZT/SRO/Si film were 21 and 35 μC/cm 2 , and those of the PZT/Pt/Ti/SiO 2 /Si film were 20 and 31 μC/cm 2 . The remnant polarization of the PZT/SRO/Si film maintained more than 10 8 switching cycles, and the fatigue property was observed for the PZT film fabricated on the Pt/Ti/SiO 2 /Si electrode

MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

2006-01-01

A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

Pb(Zr,Ti)O3-Pb(Mn1/3Nb2/3)O3 piezoelectric thick films by aerosol deposition

International Nuclear Information System (INIS)

Ryu, Jungho; Choi, Jong-Jin; Hahn, Byung-Dong; Yoon, Woon-Ha; Lee, Byoung-Kuk; Choi, Joon Hwan; Park, Dong-Soo

2010-01-01

Piezoelectric thick films of Pb(Zr,Ti)O 3 -Pb(Mn 1/3 Nb 2/3 )O 3 (PZT-PMnN) with Zr:Ti ratios ranging from 0.45:0.55 to 0.60:0.40 were fabricated on a platinized silicon wafer by aerosol deposition (AD). All the films were deposited with a thickness of 10 μm with high density. By adding PMnN to 57:43 PZT, a dielectric constant as low as ∼660 was achieved while the effective piezoelectric constant was over 140 pC/N. PZT-PMnN with a Zr:Ti ratio of 57:43 thus showed a maximum piezoelectric voltage constant (g 33 ) of 23.8 x 10 -3 Vm/N and is a good candidate for high quality thick films for application to high-energy density or high sensitivity, piezoelectric energy harvesters and sensors.

Optimized electrode coverage of membrane actuators based on epitaxial PZT thin films

International Nuclear Information System (INIS)

Nguyen, M D; Dekkers, M; Blank, D H A; Rijnders, G; Nazeer, H

2013-01-01

This research presents an optimization of piezoelectric membrane actuators by maximizing the actuator displacement. Membrane actuators based on epitaxial Pb(Zr,Ti)O 3 thin films grown on all-oxide electrodes and buffer layers using silicon technology were fabricated. Electrode coverage was found to be an important factor in the actuation displacement of the piezoelectric membranes. The optimum electrode coverage for maximum displacement was theoretically determined to be 39%, which is in good agreement with the experimental results. Dependences of membrane displacement and optimum electrode coverage on membrane diameter and PZT-film/Si-device-layer thickness ratio have also been investigated. (paper)

Size effects on structural and dielectric properties of PZT thin films at compositions around the morpho tropic phase boundary

International Nuclear Information System (INIS)

Lima, Elton Carvalho; Araujo, Eudes Borges; Souza Filho, Antonio Gomes de; Bdikin, Igor

2011-01-01

Full text: The demand for portability in consumer electronics has motivated the understanding of size effects on ferroelectric thin films. The actual comprehension of these effects in ferroelectrics is unsatisfactory, since the polarization interacts more strongly than other order parameters such as strain and charge. As a result, extrinsic effects are produced if these variables are uncontrolled and problems such as ferroelectric paraelectric phase transition at nanometers scale remains an unsolved issue. In the present work, the effects of thickness and compositional fractions on the structural and dielectric properties of PbZr 1-x Ti x O 3 (PZT) thin films were studied at a composition around the morphotropic phase boundary (x = 0.50). For this purpose, thin films with different thicknesses and different PbO excess were deposited on Si(100) and Pt=T iO 2 =SiO 2 =Si substrates by a chemical method and crystallized in electric furnace at 700 deg C for 1 hour. The effects of substrate, pyrolysis temperature and excess lead addition in the films are reported. For films with 10 mol% PbO in excess, the pyrolysis in the regime of 300 deg C for 30 minutes was observed to yield PZT pyrochlore free thin films deposited on Pt=T iO 2 =SiO 2 =Si substrate. Out this condition, the transformation from amorphous to the pyrochlore metastable phase is kinetically more favorable that a transformation to the perovskite phase, which is thermodynamically stable. Rietveld refinements based on X-ray diffraction results showed that films present a purely tetragonal phase and that this phase does not change when the film thickness decreases. The dielectric permittivity measurements showed a monoclinic → tetragonal phase transition at 198K. Results showed that the dielectric permittivity (ε) increases continuously from 257 to 463, while the thickness of the PZT films increases from 200 to 710 nm. These results suggests that interface pinning centers can be the responsible mechanism by

Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

International Nuclear Information System (INIS)

Kurogi, H.; Yamagata, Y.; Ebihara, K.

1998-01-01

Pb(Zr X Ti 1-X )O 3 (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, λ=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm -2 on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P r =15 μC cm -2 , 30 μC cm -2 and E c =200 kV cm -1 , 100 kV cm -1 for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10 8 cycles of switching. (orig.)

Fabrication and properties of SmFe2-PZT magnetoelectric thin films

KAUST Repository

Giouroudi, Ioanna

2013-05-17

Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Fabrication and properties of SmFe2-PZT magnetoelectric thin films

KAUST Repository

Giouroudi, Ioanna; Alnassar, Mohammed; Kosel, Jü rgen

2013-01-01

Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Synthesis, Structural, Optical and Dielectric Properties of Nanostructured 0-3 PZT/PVDF Composite Films.

Science.gov (United States)

Revathi, S; Kennedy, L John; Basha, S K Khadheer; Padmanabhan, R

2018-07-01

Nanostructured PbZr0.52Ti0.48O3 (PZT) powder was synthesized at 500 °C-800 °C using sol-gel route. X-ray diffraction and Rietveld analysis confirmed the formation of perovskite structure. The sample heat treated at 800 °C alone showed the formation of morphotropic phase boundary with coexistence of tetragonal and rhombohedral phase. The PZT powder and PVDF were used in 0-3 connectivity to form the PZT/PVDF composite film using solvent casting method. The composite films containing 10%, 50%, 70% and 80% volume fraction of PZT in PVDF were fabricated. The XRD spectra validated that the PZT structure remains unaltered in the composites and was not affected by the presence of PVDF. The scanning electron microscopy images show good degree of dispersion of PZT in PVDF matrix and the formation of pores at higher PZT loading. The quantitative analysis of elements and their composition were confirmed from energy dispersive X-ray analysis. The optical band gap of the PVDF film is 3.3 eV and the band gap decreased with increase in volume fraction of PZT fillers. The FTIR spectra showed the bands corresponding to different phases of PVDF (α, β, γ) and perovskite phase of PZT. The thermogravimetric analysis showed that PZT/PVDF composite films showed better thermal stability than the pure PVDF film and hydrophobicity. The dielectric constant was measured at frequency ranging from 1 Hz to 6 MHz and for temperature ranging from room temperature to 150 °C. The composite with 50% PZT filler loading shows the maximum dielectric constant at the studied frequency and temperature range with flexibility.

Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

Energy Technology Data Exchange (ETDEWEB)

Kurogi, H; Yamagata, Y; Ebihara, K [Kumamoto Univ. (Japan). Dept. of Electr. Eng. and Comput. Sci.; Inoue, N [Kyushu Electric Power Co., Inc., Suizenji, 1-6-36, Kumamoto 862 (Japan)

1998-03-01

Pb(Zr{sub X}Ti{sub 1-X})O{sub 3} (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, {lambda}=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm{sup -2} on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P{sub r}=15 {mu}C cm{sup -2}, 30 {mu}C cm{sup -2} and E{sub c}=200 kV cm{sup -1}, 100 kV cm{sup -1} for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10{sup 8} cycles of switching. (orig.) 7 refs.

Influence of plasma pressure on the growth characteristics and ferroelectric properties of sputter-deposited PZT thin films

International Nuclear Information System (INIS)

Bose, A.; Maity, T.; Bysakh, S.; Seal, A.; Sen, Suchitra

2010-01-01

PZT thin films of thickness (320-1040) nm were synthesized on Si/SiO 2 /Ti/Pt multilayered substrates by radio frequency magnetron sputtering. The influence of plasma pressure in the range of (0.24-4.9) Pa, during deposition, on the structural, electrical and ferroelectric properties of the PZT films was systematically studied. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and cross-sectional transmission electron microscopy (XTEM) were employed for structural study. Nano-probe Energy Dispersive (EDX) line scanning was employed to investigate the elemental distribution across the film-bottom electrode interface. I-V characteristics and polarization-electric field (P-E) hysteresis loop of the films were measured. The study reveals that the plasma pressure has a strong influence on the evolution and texture of the ferroelectric perovskite phase and microstructure of the films. At an optimum plasma pressure of 4.1 Pa, PZT films are grown with 93% perovskite phase with (1 1 1) preferred orientation and uniform granular microstructure. These films show a saturation polarization of 67 μC/cm 2 , remnant polarization of 30 μC/cm 2 and coercive field of 28 kV/cm which, according to the literature, seem to be suitable for device applications. Transmission electron microscopy (TEM) study shows that at a plasma pressure of 4.1 Pa, the PZT/bottom Pt interface is sharp and no amorphous interlayer is formed at the interface. At a higher plasma pressure of 4.9 Pa, poor I-V and P-E hysteresis loop are observed which are interpreted as due to an amorphous interlayer at the film-bottom electrode interface which is possibly enriched in Pb, Zr, O and Pt.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

Science.gov (United States)

Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

2012-01-05

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

Thickness dependence of the poling and current-voltage characteristics of paint films made up of lead zirconate titanate ceramic powder and epoxy resin

Science.gov (United States)

Egusa, Shigenori; Iwasawa, Naozumi

1995-11-01

A specially prepared paint made up of lead zirconate titanate (PZT) ceramic powder and epoxy resin was coated on an aluminum plate and was cured at room temperature, thus forming the paint film of 25-300 μm thickness with a PZT volume fraction of 53%. The paint film was then poled at room temperature, and the poling behavior was determined by measuring the piezoelectric activity as a function of poling field. The poling behavior shows that the piezoelectric activity obtained at a given poling field increases with an increase in the film thickness from 25 to 300 μm. The current-voltage characteristic of the paint film, on the other hand, shows that the increase in the film thickness leads not only to an increase in the magnitude of the current density at a given electric field but also to an increase in the critical electric field at which the transition from the ohmic to space-charge-limited conduction takes place. This fact indicates that the amount of the space charge of electrons injected into the paint film decreases as the film thickness increases. Furthermore, comparison of the current-voltage characteristic of the paint film with that of a pure epoxy film reveals that the space charge is accumulated largely at the interface between the PZT and epoxy phases in the paint film. On the basis of this finding, a model is developed for the poling behavior of the paint film by taking into account a possible effect of the space-charge accumulation and a broad distribution of the electric field in the PZT phase. This model is shown to give an excellent fit to the experimental data of the piezoelectric activity obtained here as a function of poling field and film thickness.

Sputtered highly oriented PZT thin films for MEMS applications

Science.gov (United States)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

Texture variations in sol-gel derived PZT films on substrates with platinum metallization

NARCIS (Netherlands)

Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; Cobianu, C.

1994-01-01

Metalorganic precursor solutions of composition Zr : Ti = 0.53 : 0.47 were used to spin-cast PZT layers on sputtered Pt films. After annealing at temperatures of 550 °C - 800 °C, the PZT films of tetragonal perovskite structure reproducibly showed different textures and surface morphologies,

Pb(Zr,TiO3 (PZT Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

Directory of Open Access Journals (Sweden)

Richard X. FU

2011-04-01

Full Text Available The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,TiO3 (PZT thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100 Cz wafer] and c-plane sapphire (0001//Ti//Pt followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Si’s. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film’s breakdown voltage was much higher than 22 % Pb target sputtered film.

Multiscale numerical study on ferroelectric nonlinear response of PZT thin films (Conference Presentation)

Science.gov (United States)

Wakabayashi, Hiroki; Uetsuji, Yasutomo; Tsuchiya, Kazuyoshi

2017-06-01

PZT thin films have excellent performance in deformation precision and response speed, so it is used widely for actuators and sensors of Micro Electro Mechanical System (MEMS). Although PZT thin films outputs large piezoelectricity at morphotropic phase bounfary (MPB), it shows a complicated hysteresis behavior caused by domain switching and structural phase transition between tetragonal and rhombohedral. In general, PZT thin films have some characteristic crystal morphologies. Additionally mechanical strains occur by lattice mismatch with substrate. Therefore it is important for fabrication and performance improvement of PZT thin films to understand the relation between macroscopic hysteresis response and microstructural changes. In this study, a multiscale nonlinear finite element simulation was proposed for PZT thin films at morphotropic phase boundary (MPB) on the substrate. The homogenization theory was employed for scale-bridging between macrostructure and microstructure. Figure 1 shows the proposed multiscale nonlinear simulation [1-3] based on the homogenization theory. Macrostructure is a homogeneous structure to catch the whole behaviors of actuators and sensors. And microstructure is a periodic inhomogeneous structure consisting of domains and grains. Macrostructure and microstructure are connected perfectly by homogenization theory and are analyzed by finite element method. We utilized an incremental form of fundamental constitutive law in consideration with physical property change caused by domain switching and structural phase transition. The developed multiscale finite element method was applied to PZT thin films with lattice mismatch strain on the substrate, and the relation between the macroscopic hysteresis response and microscopic domain switching and structural phase transition were investigated. Especially, we discuss about the effect of crystal morphologies and lattice mismatch strain on hysteresis response.

Reliability of vibration energy harvesters of metal-based PZT thin films

Science.gov (United States)

Tsujiura, Y.; Suwa, E.; Kurokawa, F.; Hida, H.; Kanno, I.

2014-11-01

This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s2. However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s2. The transverse piezoelectric coefficient (e31,f) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s2 and 36% at 25 m/s2 if we continue to excite the PVEHs for 30 years.

Reliability of vibration energy harvesters of metal-based PZT thin films

International Nuclear Information System (INIS)

Tsujiura, Y; Suwa, E; Kurokawa, F; Hida, H; Kanno, I

2014-01-01

This paper describes the reliability of piezoelectric vibration energy harvesters (PVEHs) of Pb(Zr,Ti)O 3 (PZT) thin films on metal foil cantilevers. The PZT thin films were directly deposited onto the Pt-coated stainless-steel (SS430) cantilevers by rf-magnetron sputtering, and we observed their aging behavior of power generation characteristics under the resonance vibration condition for three days. During the aging measurement, there was neither fatigue failure nor degradation of dielectric properties in our PVEHs (length: 13 mm, width: 5.0 mm, thickness: 104 μm) even under a large excitation acceleration of 25 m/s 2 . However, we observed clear degradation of the generated electric voltage depending on excitation acceleration. The decay rate of the output voltage was 5% from the start of the measurement at 25 m/s 2 . The transverse piezoelectric coefficient (e 31,f ) also degraded with almost the same decay rate as that of the output voltage; this indicates that the degradation of output voltage was mainly caused by that of piezoelectric properties. From the decay curves, the output powers are estimated to degrade 7% at 15 m/s 2 and 36% at 25 m/s 2 if we continue to excite the PVEHs for 30 years

Optimization of the low-temperature MOCVD process for PZT thin films

CERN Document Server

Wang, C H; Choi, D J

2000-01-01

Pb(Zr sub X Ti sub 1 sub - sub X)O sub 3 (PZT) thin films of about 0.34 nm were successfully grown at a low temperature of 500 .deg. C by metalorganic chemical vapor deposition with a beta-diketonate complex of Pb(tmhd) sub 2 , zirconium t-butoxide, and titanium isopropoxide as source precursors. Ferroelectric capacitors of a Pt/PZT/Pt configuration were fabricated, and their structural and electrical properties were investigated as a function of the input Pb/(Zr+Ti) and Zr/(Zr+Ti) source ratios. The structure of the as-grown films at 500 .deg. C changed from tetragonal to pseudocubic with increasing the Zr/(Zr+Ti) ratio above an input Pb/(Zr+Ti) source ratio of 5.0 while a 2nd phase of ZrO sub 2 was only observed below Pb/(Zr+Ti) ratio of 5.0, regardless of the Zr/(Zr+Ti) ratio. The dielectric constant and loss of the PZT films were 150-1200 and 0.01-0.04 at 100 kHz, respectively, Leakage current densities decreased with increasing the Zr/(Zr+Ti) ratio. The process window for growing a single phase PZT is ve...

Dielectric enhancement of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film

Energy Technology Data Exchange (ETDEWEB)

Fan, Yasong; Chen, Xiaoyang; Habibul, Arzigul; Zhang, Danyang; Yu, Ping [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China)

2016-08-15

Multilayer thick films (∝4 μm) with compositional PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO{sub 3} seeding layers. The effects of LaNiO{sub 3} layers on microstructure and electrical properties of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} thick films were investigated in detail. The results show that both PZT and PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film were pure perovskite crystalline phase. The PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} film texture was dense and well adhered on the LaNiO{sub 3} layer. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ε{sub r} ∝2450 (10 kHz) and tanδ ∝0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, α ∝51.1408 cm kV{sup -1} (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain-wall-defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

International Nuclear Information System (INIS)

Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

2015-01-01

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

Energy Technology Data Exchange (ETDEWEB)

Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

2015-10-05

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes.

Science.gov (United States)

Chidambaram, Nachiappan; Mazzalai, Andrea; Muralt, Paul

2012-08-01

Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the Si directions. Randomly oriented 1-μm-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C·m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be

Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

2015-03-30

Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

Pre-stressed piezoelectric bimorph micro-actuators based on machined 40 µm PZT thick films: batch scale fabrication and integration with MEMS

International Nuclear Information System (INIS)

Wilson, S A; Jourdain, R P; Owens, S

2010-01-01

The projected force–displacement capability of piezoelectric ceramic films in the 20–50 µm thickness range suggests that they are well suited to many micro-fluidic and micro-pneumatic applications. Furthermore when they are configured as bending actuators and operated at ∼ 1 V µm −1 they do not necessarily conform to the high-voltage, very low-displacement piezoelectric stereotype. Even so they are rarely found today in commercial micro-electromechanical devices, such as micro-pumps and micro-valves, and the main barriers to making them much more widely available would appear to be processing incompatibilities rather than commercial desirability. In particular, the issues associated with integration of these devices into MEMS at the production level are highly significant and they have perhaps received less attention in the mainstream than they deserve. This paper describes a fabrication route based on ultra-precision ceramic machining and full-wafer bonding for cost-effective batch scale production of thick film PZT bimorph micro-actuators and their integration with MEMS. The resulting actuators are pre-stressed (ceramic in compression) which gives them added performance, they are true bimorphs with bi-directional capability and they exhibit full bulk piezoelectric ceramic properties. The devices are designed to integrate with ancillary systems components using transfer-bonding techniques. The work forms part of the European Framework 6 Project 'Q2M—Quality to Micro'

Temperature dependent mechanical property of PZT film: an investigation by nanoindentation.

Directory of Open Access Journals (Sweden)

Yingwei Li

Full Text Available Load-depth curves of an unpoled Lead Zirconate Titanate (PZT film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains.

Temperature dependent mechanical property of PZT film: an investigation by nanoindentation.

Science.gov (United States)

Li, Yingwei; Feng, Shangming; Wu, Wenping; Li, Faxin

2015-01-01

Load-depth curves of an unpoled Lead Zirconate Titanate (PZT) film composite as a function of temperature were measured by nanoindentation technique. Its reduce modulus and hardness were calculated by the typical Oliver-Pharr method. Then the true modulus and hardness of the PZT film were assessed by decoupling the influence of substrate using methods proposed by Zhou et al. and Korsunsky et al., respectively. Results show that the indentation depth and modulus increase, but the hardness decreases at elevated temperature. The increasing of indentation depth and the decreasing of hardness are thought to be caused by the decreasing of the critical stress needed to excite dislocation initiation at high temperature. The increasing of true modulus is attributed to the reducing of recoverable indentation depth induced by back-switched domains. The influence of residual stress on the indentation behavior of PZT film composite was also investigated by measuring its load-depth curves with pre-load strains.

Electrodynamic properties of porous PZT-Pt films at terahertz frequency range

Energy Technology Data Exchange (ETDEWEB)

Komandin, Gennady A.; Porodinkov, Oleg E.; Spektor, Igor E.; Volkov, Alexander A. [Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Vorotilov, Konstantin A.; Seregin, Dmitry S.; Sigov, Alexander S. [Moscow Technological University (MIREA), Moscow (Russian Federation)

2017-01-15

Electrodynamics of Si-SiO{sub 2}-TiO{sub 2}-Pt-PZT heterostructures is studied in the frequency range from 5 to 5000 cm{sup -1} by monochromatic BWO (backward wave oscillator) and infrared Fourier-transform spectroscopy techniques to derive the dielectric characteristics of the sol-gel porous ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} films. Broad frequency band dielectric response of PZT films with different density is constructed using the oscillator dispersion models. The main contribution to the film permittivity is found to form at frequencies below 100 cm{sup -1} depending strongly and non-linearly on the film medium density. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Temperature dependence of PZT film optical properties

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

11-12, - (2001), s. 352-354 ISSN 0447-6441 R&D Projects: GA ČR GA202/00/1425; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : refractive index profile * PZT film * temperature dependence of optical properties Subject RIV: BH - Optics, Masers, Lasers

Piezoelectric PZT thin films on flexible copper-coated polymer films

Czech Academy of Sciences Publication Activity Database

Suchaneck, G.; Volkonskiy, O.; Gerlach, G.; Hubička, Zdeněk; Dejneka, Alexandr; Jastrabík, Lubomír; Kiselev, D.; Bdikin, I.; Kholkin, A.

636/637, - (2010), s. 392-397 ISSN 0255-5476 R&D Projects: GA ČR GC202/09/J017; GA AV ČR KJB100100703 Institutional research plan: CEZ:AV0Z10100522 Keywords : plasma jet deposition * PZT * kapton® film substrate * piezoresponse force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

Science.gov (United States)

Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2013-07-01

Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

Energy Technology Data Exchange (ETDEWEB)

Zhong, Jian; Batra, Vaishali; Han, Hui; Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States); Pandey, Raghvendar K. [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

2015-09-15

The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition

International Nuclear Information System (INIS)

Park, Hyeong-Ho; Park, Hyung-Ho; Hill, Ross H.

2004-01-01

The ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-doped lead zirconate titanate (PLZT) multilayer films formed by photochemical metal-organic deposition (PMOD) using photosensitive precursors have been characterized. The substitution of La for Pb was reported to induce improved ferroelectric properties, especially fatigue resistance, through the reduction of oxygen vacancies. The relation between La-substitution and the ferroelectric properties was investigated by characterization of the effect of the order of stacking four ferroelectric layers of PZT or PLZT in the multilayer films 4-PZT, PZT/2-PLZT/PZT, PLZT/2-PZT/PLZT, and 4-PLZT. The films with the PLZT layer at the top and bottom showed an improvement in the fatigue resistance. It was revealed that defect dipole such as O vacancy was reduced at the ferroelectric/Pt interface by doping with La. Also, the bottom layer, just on Pt substrate had a significant influence on the surface microstructure and growth orientation of ferroelectric film

Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

Science.gov (United States)

Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

2016-07-11

The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

Enhanced fatigue characteristics of sol-gel derived PZT thin films

International Nuclear Information System (INIS)

Shim, Donghyun; Pak, Jaemoon; Nam, Kuangwoo; Park, Gwangweo

2008-01-01

Pb(Zr,Ti)O 3 (PZT) thin films with Zr/Ti ratio of 52:48 were deposited on Pt/Ti/SiO 2 /Si substrates using the sol-gel method. Since the conditions of heat-treatment play a great role in film growth, post-annealing processes were conducted under different environments. After standard processing, films were annealed at 600 deg. C in three different atmosphere-air, O 2 and a two-step process conducted in air for 30 min and then in O 2 ambient, all done for 10 min. Through electron microscopy and X-ray diffraction, we found that all films were crack-free and highly (1 1 1) oriented. Hysteresis measurements showed a generally large polarization value. The fatigue properties differ drastically for all processes, showing an abnormal behaviour near the end of the measurement. The hysteresis loops before and after 1 x 10 10 switching cycles have been slightly changed in both shape and magnitude. Such abnormality and fatigue-free property is an unusual result for PZT films prepared on conventional Pt/Ti/SiO 2 /Si substrates

Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

Science.gov (United States)

2014-09-01

function of heating rate. The FWHM of the Ill PZT texture components is sim 2978 Journal of the American Ceramic Society Mhin et al. Vol. 97, No. 9...Z39.18 ABSTRACT Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates Report Title The crystallization of lead zirconate...phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

Science.gov (United States)

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

International Nuclear Information System (INIS)

Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y.; Fourmentel, D.; Destouches, C.; Villard, J.F.

2015-01-01

The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m -2 .K -1 and 130 μC.N -1 for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to

Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

Energy Technology Data Exchange (ETDEWEB)

Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

2015-07-01

The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

2017-07-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy

OpenAIRE

B. S. Li

2012-01-01

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarizatio...

Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

International Nuclear Information System (INIS)

Cornejo, I.A.; Haun, M.J.

1996-01-01

Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

A new traveling wave ultrasonic motor using thick ring stator with nested PZT excitation.

Science.gov (United States)

Chen, Weishan; Shi, Shengjun; Liu, Yingxiang; Li, Pei

2010-05-01

To avoid the disadvantages of conventional traveling wave ultrasonic motors--lower efficiency PZT working mode of d(31), fragility of the PZT element under strong excitation, fatigue of the adhesive layer under harsh environmental conditions, and low volume of the PZT material in the stator--a new type of traveling wave ultrasonic motor is presented in this paper. Here we implement the stator by nesting 64 PZT stacks in 64 slots specifically cut in a thick metal ring and 64 block springs nested within another 64 slots to produce preloading on the PZT stacks. In this new design, the d33 mode of the PZT is used to excite the flexural vibrations of the stator, and fragility of the PZT ceramics and fatigue of the adhesive layer are no longer an issue. The working principle, FEM simulation, fabrication, and performance measurements of a prototype motor were demonstrated to validate the proposed ideas. Typical output of the prototype motor is no-load speed of 15 rpm and maximum torque of 7.96 N x m. Further improvement will potentially enhance its features by increasing the accuracy in fabrication and adopting appropriate frictional material into the interface between the stator and the rotor.

Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

Science.gov (United States)

Böttger, U.; Waser, R.

2017-07-01

The existence of non-ferroelectric regions in ferroelectric thin films evokes depolarization effects leading to a tilt of the P(E) hysteresis loop. The analysis of measured hysteresis of lead zirconate titanate (PZT) thin films is used to determine a depolarization factor which contains quantitative information about interfacial layers as well as ferroelectrically passive zones in the bulk. The derived interfacial capacitance is smaller than that estimated from conventional extrapolation techniques. In addition, the concept of depolarization is used for the investigation of fatigue behavior of PZT thin films indicating that the mechanism of seed inhibition, which is responsible for the effect, occurs in the entire film.

A low-frequency MEMS piezoelectric energy harvester with a rectangular hole based on bulk PZT film

Science.gov (United States)

Tian, Yingwei; Li, Guimiao; Yi, Zhiran; Liu, Jingquan; Yang, Bin

2018-06-01

This paper presents a high performance piezoelectric energy harvester (PEH) with a rectangular hole to work at low-frequency. This PEH used thinned bulk PZT film on flexible phosphor bronze, and its structure included piezoelectric layer, supporting layer and proof mass to reduce the resonant frequency of the device. Here, thinned bulk PZT thick film was used as piezoelectric layer due to its high piezoelectric coefficient. A Phosphor bronze was deployed as supporting layer because it had better flexibility compared to silicon and could work under high acceleration ambient with good durability. The maximum open-circuit voltage of the PEH was 15.7 V at low resonant frequency of 34.3 Hz when the input vibration acceleration was 1.5 g (g = 9.81 m/s2). Moreover, the maximum output power, the output power density and the actually current at the same acceleration were 216.66 μW, 1713.58 μW/cm3 and 170 μA, respectively, when the optimal matched resistance of 60 kΩ was connected. The fabricated PEH scavenged the vibration energy of the vacuum compression pump and generated the maximum output voltage of 1.19 V.

Effect of solid content variations on PZT slip for tape casting

Directory of Open Access Journals (Sweden)

Gang Jian

2012-12-01

Full Text Available Lead zirconate titanate (PZT particles with pure tetragonal structure were synthesized by solid-state reaction method and used for preparation of slurries with different solid contents (34–80 wt.%. Then, PZT thick films were fabricated by the nonaqueous tape casting method. It was shown that the slurry prepared from ball-milled particles exhibited better rheology properties than slurry from particles which were not ball-milled. Measurement of sedimentation volumes and zeta potentials indicated particle aggregation, resulting in weak stability of the slurries with high solid contents. The microstructure, piezoelectric and ferroelectric properties of PZT sintered films were investigated in terms of solid contents. Ceramic films prepared from the slurry with solid contents of 73 wt.% had the optimal structure and properties. After poling at 200 °C with an applied field of 1.2 kV/cm, a d33 of 294 pC/N was achieved; typical ferroelectric properties were also observed with a Ps of 38 μC/cm2.

Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O(3)-PZT thin films.

Science.gov (United States)

Wasa, Kiyotaka; Adachi, Hideaki; Nishida, Ken; Yamamoto, Takashi; Matsushima, Tomoaki; Kanno, Isaku; Kotera, Hidetoshi

2012-01-01

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, ξPb(Mn,Nb)O3-(1 - ξ)PZT, were grown on SrRuO(3)/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec > 180 kV/cm, large remanent polarization, P(r) = 100 μC/cm(2), small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600 °C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m(2) for PZT(48/52) at ξ = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS. © 2012 IEEE

Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

NARCIS (Netherlands)

Nguyen, Duc Minh

2010-01-01

In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser

Structure and properties of PZT thin films on strontium ruthenate and calcium ruthenate electrodes

International Nuclear Information System (INIS)

Wu, T.-J.; Tsai, D.-S.

2004-01-01

PZT thin films have been prepared via metalorganic CVD (MOCVD) on four substrates of conducting oxides of ruthenates, SrRuO 3 /Pt/Ti/SiO 2 /Si(1 0 0), SrRuO 3 /SiO 2 /Si(1 0 0), CaRuO 3 /Pt/Ti/SiO 2 /Si(1 0 0), CaRuO 3 /SiO 2 /Si(1 0 0). The conducting ruthenate layers were also grown using MOCVD. Ferroelectric properties of polarization fatigue and leakage current density are measured. The internal strain of PZT thin crystal which is mainly constrained by the bottom electrode seems to be the decisive factor in ferroelectric properties. The internal strain of PZT is represented by its tetragonality ratio. The PZT thin film in the capacitor Au/PZT/SrRuO 3 /Pt/Ti/SiO 2 /Si, with the largest tetragonality ratio 1.026, exhibits an optimum combination of large polarization, less fatigue, and low leakage current density. Both SrRuO 3 and CaRuO 3 are good diffusion barriers to prevent interdiffusion of cations between the ferroelectric and the electrode. The slightly higher intermixing at the CaRuO 3 -to-Pt/Ti interface is owing to the high annealing temperature needed in CaRuO 3 synthesis

Improvement of the fatigue and the ferroelectric properties of PZT films through a LSCO seed layer

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Sofia A.S., E-mail: sofiarodrigues@fisica.uminho.pt; Silva, José P.B.; Khodorov, Anatoli; Martín-Sánchez, Javier; Pereira, M.; Gomes, M.J.M.

2013-11-01

Highlights: • Pulsed laser deposited PZT thin films. • Seed layer effect on the structural and ferroelectric properties of the PZT films. • The stability of P{sub r} was improved with the introduction of the LSCO layer. -- Abstract: The ability to optimizate the preparation of Lead Zirconate Titanate (PZT) films on platinized Si substrate by pulsed laser deposition was demonstrated. The effect of the modification of the interface film/electrode through the use of a (La,Sr)CoO{sub 3} (LSCO) seed layer on the remnant polarization, fatigue endurance and stress in PZT films was studied. An improvement on the ferroelectric properties was found with the using of the LSCO layer. A remnant polarization (P{sub r}) of 19.8 μC/cm{sup 2} and 4.4 μC/cm{sup 2} for films with and without the LSCO layer were found. In the same way the polarization fatigue decreases significantly after deposition of the LSCO layer between the film and substrate. Atomic force microscopy (AFM) images revealed a different growth process in the films. Current–voltage (I–V) measurements showed that the use of LSCO seed layer improves the leakage current and, on the other hand the conduction mechanisms in the film without LSCO, after the fatigue test, was found to be changed from Schottky to Poole–Frenkel. The trap activation energy (about 0.14 eV) determined from Poole–Frenkel mode agrees well with the energy level of oxygen vacancies. The films stresses were estimated by XRD in order to explain the improvement on the structure and consequentially ferroelectric properties of the films. The model proposed by Dawber and Scott was found to be in agreement with our experimental data, which seems to predict that the oxygen vacancies play an important role on fatigue.

Study of mechanical-magnetic and electromagnetic properties of PZT/Ni film systems by a novel bulge technique

Energy Technology Data Exchange (ETDEWEB)

Liu, Q.; Zhou, W.; Ding, J.; Xiao, M. [School of Materials Science and Engineering, Xiangtan University, Hunan 411105 (China); Key Laboratory of Film Materials and Devices of Science and Technology Department of Hunan Province, Xiangtan University, Hunan 411105 (China); Yu, Z.J.; Xu, H. [State Key Lab for Turbulence and Complex Systems, Peking University, Beijing 100871 (China); Mao, W.G., E-mail: ssamao@126.com [School of Materials Science and Engineering, Xiangtan University, Hunan 411105 (China); Key Laboratory of Film Materials and Devices of Science and Technology Department of Hunan Province, Xiangtan University, Hunan 411105 (China); Pei, Y.M.; Li, F.X. [State Key Lab for Turbulence and Complex Systems, Peking University, Beijing 100871 (China); Feng, X. [AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Fang, D.N., E-mail: fangdn@pku.edu.cn [State Key Lab for Turbulence and Complex Systems, Peking University, Beijing 100871 (China); Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing 100081 (China)

2017-02-01

A novel multiple functional bulge apparatus was designed to study the mechanical-electronic-magnetic characteristics of electromagnetic materials. The elastic modulus difference effect of Ni thin film was observed and it was about 22.16% in the demagnetized and magnetization saturated states. The mechanical-magnetic behaviors of Ni and lead-titanate zirconate (PZT)/Ni films were in-situ measured by using the new bulge systems, respectively. The evolutions of three key material properties in hysteresis loop including saturation magnetization, remanent magnetization and coercive field were discussed in detail, respectively. The mechanisms of mechanical-magnetic coupled behaviors of Ni and PZT/Ni films were analyzed with the aid of the competitive relationship of stress and magnetization. Similarly, the electronic-magnetic characteristics of PZT/Ni films were in-situ measured by using this experimental system. The evolution of saturated magnetization, remanent magnetization and coercive field Kerr signals were discussed with the magneto-elastic anisotropy energy point. In this paper, a suitable mechanical-electronic-magnetic bulge measurement system was established, which would provide a good choice for further understanding the multi field coupling characteristics of electromagnetic film materials. - Highlights: • A novel bulge apparatus was designed to study electromagnetic materials. • The mechanical-magnetic features of Ni film were studied by this new apparatus. • The ΔE effect of Ni film was observed and analyzed. • The mechanical electronic-magnetic characteristics of PZT/Ni film were discussed.

Wafer scale lead zirconate titanate film preparation by sol-gel method using stress balance layer

International Nuclear Information System (INIS)

Lu Jian; Kobayashi, Takeshi; Yi Zhang; Maeda, Ryutaro; Mihara, Takashi

2006-01-01

In this paper, platinum/titanium (Pt/Ti) film was introduced as a residual stress balance layer into wafer scale thick lead zirconate titanate (PZT) film fabrication by sol-gel method. The stress developing in PZT film's bottom electrode as well as in PZT film itself during deposition were analyzed; the wafer curvatures, PZT crystallizations and PZT electric properties before and after using Pt/Ti stress balance layer were studied and compared. It was found that this layer is effective to balance the residual stress in PZT film's bottom electrode induced by thermal expansion coefficient mismatch and Ti diffusion, thus can notably reduce the curvature of 4-in. wafer from - 40.5 μm to - 12.9 μm after PZT film deposition. This stress balance layer was also found effective to avoid the PZT film cracking even when annealed by rapid thermal annealing with heating-rate up to 10.5 deg. C/s. According to X-ray diffraction analysis and electric properties characterization, crack-free uniform 1-μm-thick PZT film with preferred pervoskite (001) orientation, excellent dielectric constant, as high as 1310, and excellent remanent polarization, as high as 39.8 μC/cm 2 , can be obtained on 4-in. wafer

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

Science.gov (United States)

Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

2018-03-01

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

Characterization of Bi and Fe co-doped PZT capacitors for FeRAM.

Science.gov (United States)

Cross, Jeffrey S; Kim, Seung-Hyun; Wada, Satoshi; Chatterjee, Abhijit

2010-08-01

Ferroelectric random access memory (FeRAM) has been in mass production for over 15 years. Higher polarization ferroelectric materials are needed for future devices which can operate above about 100 °C. With this goal in mind, co-doping of thin Pb(Zr 40 ,Ti 60 )O 3 (PZT) films with 1 at.% Bi and 1 at.% Fe was examined in order to enhance the ferroelectric properties as well as characterize the doped material. The XRD patterns of PZT-5% BiFeO 3 (BF) and PZT 140-nm thick films showed (111) orientation on (111) platinized Si wafers and a 30 °C increase in the tetragonal to cubic phase transition temperature, often called the Curie temperature, from 350 to 380 °C with co-doping, indicating that Bi and Fe are substituting into the PZT lattice. Raman spectra revealed decreased band intensity with Bi and Fe co-doping of PZT compared to PZT. Polarization hysteresis loops show similar values of remanent polarization, but square-shaped voltage pulse-measured net polarization values of PZT-BF were higher and showed higher endurance to repeated cycling up to 10 10 cycles. It is proposed that Bi and Fe are both in the +3 oxidation state and substituting into the perovskite A and B sites, respectively. Substitution of Bi and Fe into the PZT lattice likely creates defect dipoles, which increase the net polarization when measured by the short voltage pulse positive-up-negative-down (PUND) method.

Design and fabrication of aspherical bimorph PZT optics

CERN Document Server

Tseng, T C; Yeh, Z C; Perng, S Y; Wang, D J; Kuan, C K; Chen, J R; Chen, C T

2001-01-01

Bimorph piezoelectric optics with a third-order-polynomial surface is designed and a prototype is fabricated as active optics. Two pairs of silicon (Si) and lead zirconate titanate (PZT) piezoelectric ceramic are bonded as Si-PZT-PZT-Si together with a multi-electrode or thin film resistor coating used as the control electrode between Si and PZT and metallic films as grounding between the interface of PZT ceramics. A linear voltage is applied to the bimorph PZT optics by probing the control electrodes from a two-channel controllable power supplier. In doing so, the optics surface can achieve a desired third-order-polynomial surface. Reducing hysteresis and creep in bimorph PZT X-ray optics is the only feasible way by inserting an appropriate capacitor in series with bimorph PZT optics to significantly reduce both effects.

Biotemplated Synthesis of PZT Nanowires

Science.gov (United States)

2013-11-25

electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Science.gov (United States)

Guiffard, B.; Seveno, R.

2015-01-01

In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

CERN Document Server

Bu, K H; Choi, D K; Seong, W K; Kim, J D

1999-01-01

Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

Phase transition shift in lead-excess PZT films under UV illumination

Czech Academy of Sciences Publication Activity Database

Deyneka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

2004-01-01

Roč. 67, - (2004), s. 173-180 ISSN 1058-4587 R&D Projects: GA ČR(CZ) GP202/02/D078; GA AV ČR(CZ) KJB1010301 Institutional research plan: CEZ:AV0Z1010914 Keywords : PZT thin films * phase transition * ellipsometry Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.427, year: 2004

Piezoelectric characterization of Pb(Zr,Ti)O3 thin films deposited on metal foil substrates by dip coating

Science.gov (United States)

Hida, Hirotaka; Hamamura, Tomohiro; Nishi, Takahito; Tan, Goon; Umegaki, Toshihito; Kanno, Isaku

2017-10-01

We fabricated the piezoelectric bimorphs composed of Pb(Zr,Ti)O3 (PZT) thin films on metal foil substrates. To efficiently inexpensively manufacture piezoelectric bimorphs with high flexibility, 1.2-µm-thick PZT thin films were directly deposited on both surfaces of 10- and 20-µm-thick bare stainless-steel (SS) foil substrates by dip coating with a sol-gel solution. We confirmed that the PZT thin films deposited on the SS foil substrates at 500 °C or above have polycrystalline perovskite structures and the measured relative dielectric constant and dielectric loss were 323-420 and 0.12-0.17, respectively. The PZT bimorphs were demonstrated by comparing the displacements of the cantilever specimens driven by single- and double-side PZT thin films on the SS foil substrates under the same applied voltage. We characterized the piezoelectric properties of the PZT bimorphs and the calculated their piezoelectric coefficient |e 31,f| to be 0.3-0.7 C/m2.

Performance of magnetoelectric PZT/Ni multiferroic system for energy harvesting application

Science.gov (United States)

Gupta, Reema; Tomar, Monika; Kumar, Ashok; Gupta, Vinay

2017-03-01

Magnetoelectric (ME) coefficient of Lead Zirconium Titanate (PZT) thin films has been probed for possible energy harvesting applications. Single phase PZT thin films have been deposited on nickel substrate (PZT/Ni) using pulsed laser deposition (PLD) technique. The effect of PLD process parameters on the ME coupling coefficient in the prepared systems has been investigated. The as grown PZT films on Ni substrate were found to be polycrystalline with improved ferroelectric and ferromagnetic properties. The electrical switching behavior of the PZT thin films were verified using capacitance voltage measurements, where well defined butterfly loops were obtained. The ME coupling coefficient was estimated to be in the range of 94.5 V cm-1 Oe-1-130.5 V cm-1 Oe-1 for PZT/Ni system, which is large enough for harnessing electromagnetic energy for subsequent applications.

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

Science.gov (United States)

Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.

2017-11-01

Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

Directory of Open Access Journals (Sweden)

Tao Zhang

2015-01-01

Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Influence of binding material of PZT coating on microresonator's electrical and mechanical properties

Science.gov (United States)

Janusas, Giedrius; Guobiene, Asta; Palevicius, Arvydas; Brunius, Alfredas; Cekas, Elingas; Baltrusaitis, Valentinas; Sakalys, Rokas

2017-06-01

Microresonators are fundamental components integrated in hosts of MEMS applications: covering the automotive sector, the telecommunication industry, electronic equipment for surface/material characterization and motion sensing, and etc. The aim of this paper is to investigate the mechanical and electrical properties of PZT film fabricated with three binding materials: polyvinyl butyral (PVB), polymethyl methacrylate (PMMA) and polystyrene (PS) and to evaluate applicability in control of microresonators Q factor. Micro particles of PZT powder were mixed with 20% solution of PVB, PMMA and PS in benzyl alcohol. For investigation of mechanical and electrical properties multilayer cantilevers were made. Obtained PZT and polymer paste was screen printed on copper (thickness 40 μm) using polyester monofilament screen meshes (layer thickness 50 μm) and dried for 30 min at 100°C. Electric dipoles of the PZT particles in composite material were aligned using high voltage generator (5 kV) and a custom-made holder. Electric field was held for 30 min. Surfaces of the applied films were investigated by Atomic Force Microscope NanoWizard(R)3 NanoScience. Dynamic and electrical characteristics of the multilayer were investigated using laser triangular displacement sensor LK-G3000. The measured vibration amplitude and generated electrical potential was collected with USB oscilloscope PicoScope 3424. As the results showed, these cantilevers were able to transform mechanical strain energy into electric potential and, v.v. However, roughness of PZT coatings with PMMA and PS were higher, what could be the reason of the worse quality of the top electrode. However, the main advantage of the created composite piezoelectric material is the possibility to apply it on any uniform or non-uniform vibrating surface and to transform low frequency vibrations into electricity.

Equilibrium helium film in the thick film limit

International Nuclear Information System (INIS)

Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

2003-01-01

For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

Ellipsometric investigations of the refractive index depth profile in PZT thin films

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

2001-01-01

Roč. 188, č. 4 (2001), s. 1549-1552 ISSN 0031-8965 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : PZT films * optical investigations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.025, year: 2001

Tuning electro-optic susceptibity via strain engineering in artificial PZT multilayer films for high-performance broadband modulator

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Li, Hongling; Chen, Bensong; Jing, Lin; Tay, Roland Ying Jie; Lin, Jinjun; Tsang, Siu Hon; Teo, Edwin Hang Tong

2017-12-01

A series of Pb(Zr1-xTix)O3 multilayer films alternatively stacked by Pb(Zr0.52Ti0.48)O3 and Pb(Zr0.35Ti0.65)O3 layers have been deposited on corning glass by magnetron sputtering. The films demonstrate pure perovskite structure and good crystallinity. A large tetragonality (c/a) of ∼1.061 and a shift of ∼0.08 eV for optical bandgap were investigated at layer engineered films. In addition, these samples exhibited a wild tunable electro-optic behavior from tens to ∼250.2 pm/V, as well as fast switching time of down to a few microseconds. The giant EO coefficient was attribute the strain-polarization coupling effect and also comparable to that of epitaxial (001) single crystal PZT thin films. The combination of high transparency, large EO effect, fast switching time, and huge phase transition temperature in PZT-based thin films show the potential on electro-optics from laser to information telecommunication.

The converse magnetoelectric coupling in asymmetric granule/matrix composite film with Ni/PZT component

Science.gov (United States)

Chen, Bo; Su, Ning-Ning; Cui, Wen-Li; Yan, Shi-Nong

2018-04-01

In this work, a type of asymmetric granule/matrix composite film is designed, where the Ni granule is dispersed in PZT matrix, meanwhile the top and bottom electrode is constituted by Au and SRO respectively. Predicted through the electrostatic screening model and mean field approximation, considerable electrostatic charge is induced on Ni granule surface by ferroelectric PZT polarization. Predicted through the spin splitting model and spherical shell approximation, both the magnetization and magnetic anisotropy of Ni granule are modulated by ferroelectric PZT polarization. As the volume fraction of Ni granule is increased, the electric modulation of magnetization and magnetic anisotropy is reduced and enhanced respectively. As the dimension of granule/matrix composite is varied, such modulation is retained. Due to the large area-volume ratio of nano-granule, this work benefits to realize the converse magnetoelectric coupling in nanoscale.

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

International Nuclear Information System (INIS)

Zhang Wenqi; Li Aidong; Shao Qiyue; Xia Yidong; Wu Di; Liu Zhiguo; Ming Naiben

2008-01-01

Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with large remanent polarization and SrBi 2 Ta 2 O 9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages , bilayered Pb(Zr 0.52 Ti 0.48 )O 3 /SrBi 2 Ta 2 O 9 (PZT/SBT) thin films were fabricated on Pt/TiO 2 /SiO 2 /Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P r ) of 18.37 μC/cm 2 than pure SBT and less polarization fatigue up to 1 x 10 9 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications

Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

International Nuclear Information System (INIS)

Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

2001-01-01

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr,Ti)O 3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 o C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 o C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C--V characteristics, P--E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x--y alignment and the interface between electrode and PZT in MFM capacitors. copyright 2001 American Institute of Physics

Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

2011-01-01

We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

Optimum Operating Conditions for PZT Actuators for Vibrotactile Wearables

Science.gov (United States)

Logothetis, Irini; Matsouka, Dimitra; Vassiliadis, Savvas; Vossou, Clio; Siores, Elias

2018-04-01

Recently, vibrotactile wearables have received much attention in fields such as medicine, psychology, athletics and video gaming. The electrical components presently used to generate vibration are rigid; hence, the design and creation of ergonomical wearables are limited. Significant advances in piezoelectric components have led to the production of flexible actuators such as piezoceramic lead zirconate titanate (PZT) film. To verify the functionality of PZT actuators for use in vibrotactile wearables, the factors influencing the electromechanical conversion were analysed and tested. This was achieved through theoretical and experimental analyses of a monomorph clamped-free structure for the PZT actuator. The research performed for this article is a three-step process. First, a theoretical analysis presents the equations governing the actuator. In addition, the eigenfrequency of the film was analysed preceding the experimental section. For this stage, by applying an electric voltage and varying the stimulating electrical characteristics (i.e., voltage, electrical waveform and frequency), the optimum operating conditions for a PZT film were determined. The tip displacement was measured referring to the mechanical energy converted from electrical energy. From the results obtained, an equation for the mechanical behaviour of PZT films as actuators was deduced. It was observed that the square waveform generated larger tip displacements. In conjunction with large voltage inputs at the predetermined eigenfrequency, the optimum operating conditions for the actuator were achieved. To conclude, PZT films can be adapted to assist designers in creating comfortable vibrotactile wearables.

Strongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains

Science.gov (United States)

2017-01-01

Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser columnar microstructure, which improves the transverse piezoelectric coefficient (d31f) and ferroelectric remanent polarization (Pr), whereas the less densely packed columnar grains in the film deposited at high pulse rates give rise to a significantly higher longitudinal piezoelectric coefficient (d33f) value. The effect of film thickness on the ferroelectric and piezoelectric properties of the PZT films was also investigated. With increasing film thickness, the grain column diameter gradually increases, and also the average Pr and d33f values become larger. The largest piezoelectric coefficient of d33f = 408 pm V–1 was found for a 4-μm film thickness. From a series of films in the thickness range 0.5–5 μm, the z-position dependence of the piezoelectric coefficient could be deduced. A local maximum value of 600 pm V–1 was deduced in the 3.5–4.5 μm section of the thickest films. The dependence of the film properties on film thickness is attributed to the decreasing effect of the clamping constraint imposed by the substrate and the increasing spatial separation between the grains with increasing film thickness. PMID:28247756

Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

Science.gov (United States)

Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

2014-04-01

The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Energy Technology Data Exchange (ETDEWEB)

Guiffard, B.; Seveno, R. [Universite de Nantes, Lunam Universite, IETR UMR CNRS 6164, Nantes (France)

2014-07-10

In this study, we report the magnetically induced electric field E{sub 3} in Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3} (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B{sub ac} at 45 kHz) and static magnetic induction (B{sub dc}) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B{sub dc} - Δ vertical stroke E{sub 3} vertical stroke ΔB{sub dc} - is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B{sub ac} and B{sub dc} induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E{sub 3} versus B{sub dc} could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of α = vertical stroke E{sub 3} vertical stroke /B{sub ac} = 3.55 V/cm Oe under B{sub dc} = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems. (orig.)

Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Dufay, T.; Guiffard, B.; Seveno, R. [LUNAM Université, Université de Nantes, IETR (Institut d' Électronique et de Télécommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France); Thomas, J.-C. [LUNAM Université, Université de Nantes-École Centrale Nantes, GeM (Institut de Recherche en Génie Civil et Ingénierie Mécanique), UMR CNRS 6183, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3 (France)

2015-05-28

Highly flexible lead zirconate titanate, Pb(Zr,Ti)O{sub 3} (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d{sub 31} was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO{sub 2} coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO{sub 2} and PZT layers was investigated for Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3}. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO{sub 2} substrates. A laser vibrometer was used to measure the beam displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (∼8 V) were measured for every cantilevers at the resonance frequency (∼180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO{sub 2} interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d{sub 31} coefficient by a factor of 2.7, thus corresponding to a maximal d{sub 31} value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.

Engineering Nanoscale Multiferroic Composites for Memory Applications with Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

Science.gov (United States)

Chien, Diana

This work focuses on the development of atomic layer deposition (ALD) for lead zirconate titanate, Pb(ZrxTi1-x)O 3 (PZT). Leveraging the surface-reaction controlled process based on alternating self-limiting surface reactions, PZT can be synthesized not only with elemental precision to realize the desired composition (Zr/Ti = 52/48) but also with outstanding conformality. The latter enables the integration of PZT with a ferromagnetic phase to realize multiferroism (MF) and magnetoelectric (ME) effect. Since PZT is one of the best known ferroelectric and piezoelectric materials due the large displacements of the Pb ions at the morphotropic phase boundary, PZT based MF composites could lead to stronger ME coupling through strain coupling at the interface. Specifically, ALD PZT thin films were synthesized by using beta-diketonate metalorganic precursors Pb(TMHD)2, Zr(TMHD)4, and Ti(O.i-Pr) 2(TMHD)2 and H2O. The number of local cycles and global cycles were regulated to achieve the desired stoichiometry and thickness, respectively. ALD of PZT was studied to obtain (100) textured PZT on Pt (111) oriented platinized silicon substrates. In order to attain a highly oriented PZT thin film, a (100) textured PbTiO3 seed layer was required because PZT orientation is governed by nucleation. MF nanocomposites were engineered using ALD PZT thin films to achieve controlled complex nanoscale structures, enabling porosity to be studied as a new additional parameter for nanocomposite architectures to enhance ME effect. Specifically, 3--6 nm-thick ALD PZT thin films were deposited to uniformly coat the walls of mesoporous cobalt ferrite (CFO) template. The PZT/CFO nanocomposites were electrically poled ex-situ and the change in magnetic moment was measured. The inverse magnetoelectric coupling coefficient, a, was determined to be 85.6 Oe-cm/mV. The in-plane results show no significant change in magnetization (1--4%) as a function of electric field, which was expected due to the effect

Residual stress and Young's modulus of pulsed laser deposited PZT thin films: Effect of thin film composition and crystal direction of Si cantilevers

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Abelmann, Leon; Sardan Sukas, Ö.

2016-01-01

We investigated the residual stress and Young's modulus of Pb(ZrxTi1 - x)O3 (PZT) thin films with a (110) preferred orientation and a composition x ranging from 0.2 to 0.8. The films are grown by pulsed laser deposition on silicon cantilevers aligned along the <110> and <100> silicon crystal

Compositional dependence of the Young's modulus and piezoelectric coefficient of (110)-oriented pulsed laser deposited PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Sardan Sukas, Ö.; Abelmann, Leon; Elwenspoek, Michael Curt

2014-01-01

In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrₓTi₿₋ₓ)O₃ (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric

Electrical excitation and optical detection of ultrasounds in PZT based piezoelectric transducers

Energy Technology Data Exchange (ETDEWEB)

Babilotte, P; Diallo, O; Hue, L-P Tran Hu; Feuillard, G [University Francois Rabelais de Tours, Laboratory Imaging and Brain, Team Ultrasonic Characterisation and Piezoelectricity, ENIVL, Rue de la Chocolaterie, 41034 BLOIS CEDEX (France); Kosec, M; Kuscer, D, E-mail: philippe.babilotte@univ-tours.fr [Josef Stefan Institute, Jamova cesta 39, 1000 LJUBLJANA (Slovenia)

2011-01-01

The displacement response of piezoelectric PZT thick films fabricated by means of electrophoretic deposition and laid down an alumina substrate is investigated using coherent optical detection. According to thickness properties determined by electrical impedance measurements, the film presents a resonance around 40 MHz. Other resonance peaks are observed that correspond to eigen modes of the film substrate couple structure. Uniformity of the response of the integrated structure is studied across the surface of the sample when excited by either a continuous or impulse electrical voltage. Results on the amplitude of the detected signal versus the frequency and the input excitation voltage are reported. The optical detection used in these experiments is complementary to conventional techniques of characterization of piezoelectric devices such as electrical impedance measurements and allows getting information on the displacement response of the device.

Preparation of PZT/YBCO/YAlO heterostructure thin films by KrF excimer laser ablation

International Nuclear Information System (INIS)

Ebihara, Kenji; Kurogi, Hiromitsu; Yamagata, Yukihiko; Ikegami, Tomoaki; Grishin, A.M.

1998-01-01

The perovskite oxide YBa 2 Cu 3 O 7-x (YBCO) and Pb(Zr x Ti 1-x )O 3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200--600 mTorr O 2 , 2-3J/cm 2 and 5--10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO 3 :Nd show the zero resistivity critical temperature of 82 K and excellent ferroelectric properties of remnant polarization 32 microC/cm 2 , coercive force of 80 kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed

Clamping effect on the piezoelectric responses of screen-printed low temperature PZT/Polymer films on flexible substrates

Science.gov (United States)

Almusallam, A.; Yang, K.; Zhu, D.; Torah, R. N.; Komolafe, A.; Tudor, J.; Beeby, S. P.

2015-11-01

This paper introduces a new flexible lead zirconate titanate (PZT)/polymer composite material that can be screen-printed onto fabrics and flexible substrates, and investigates the clamping effect of these substrates on the characterization of the piezoelectric material. Experimental results showed that the optimum blend of PZT/polymer binder with a weight ratio of 12:1 provides a dielectric constant of 146. The measured value of the piezoelectric coefficient d33 was found to depend on the substrate used. Measured d33clp values of 70, 40, 36 pC N-1 were obtained from the optimum formulation printed on Polyester-cotton with an interface layer, Kapton and alumina substrates, respectively. The variation in the measured d33clp values occurs because of the effect of the mechanical boundary conditions of the substrate. The piezoelectric film is mechanically bonded to the surface of the substrate and this constrains the film in the plane of the substrate (the 1-direction). This constraint means that the perpendicular forces (applied in the 3-direction) used to measure d33 introduce a strain in the 1-direction that produces a charge of the opposite polarity to that induced by the d33 effect. This is due to the negative sign of the d31 coefficient and has the effect of reducing the measured d33 value. Theoretical and experimental investigations confirm a reduction of 13%, 50% and 55% in the estimated freestanding d33fs values (80 pC N-1) on Polyester-cotton, Kapton and alumina substrates, respectively. These results demonstrate the effect of the boundary conditions of the substrate/PZT interface on the piezoelectric response of the PZT/polymer film and in particular the reduced effect of fabric substrates due to their lowered stiffness.

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

Science.gov (United States)

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

Dielectric response of capacitor structures based on PZT annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

2016-12-09

Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

Process induced poling and plasma induced damage of thin films PZT

NARCIS (Netherlands)

Wang, J.; Houwman, Evert Pieter; Salm, Cora; Nguyen, Duc Minh; Vergeer, Kurt; Schmitz, Jurriaan

2017-01-01

This paper treats processing sequence induced changes on PZT. Two kinds of metal-PZT-metal capacitors are compared. The top surface and sidewall of PZT in one kind of capacitor is directly bombarded by energetic particles during ion milling process, whereas PZT in the other kind of capacitor is not.

Investigation of optical and electrical properties of Pb(Zr1-xTix)O3 thin films on different substrates

International Nuclear Information System (INIS)

Kafadaryan, Eugenia; Aghamalyan, Natella; Nikogosyan, Sergey

2006-01-01

Pb(Zr 1-x Ti x )O 3 (PZT) polycrystalline thin films were prepared by sol-gel and pulsed laser deposition techniques on Pt/Ti/SiO 2 /Si (Pt) and SrRuO 3 /LaAlO 3 (SRO/LAO) substrates. Infrared reflectivity spectroscopy with oblique (45deg) light incidence revealed both the 3LO (688cm -1 ) phonon lineshape asymmetry decrease with increasing in thickness and the thinner, disordered boundary layer at the SRO/PZT interface independently of the film preparation method. The fatigue properties of PZT films were studied for various crystallographic orientations. It was observed that in the 52/48 PZT/SRO/LAO film, when the field is applied along the (001) direction, excellent fatigue resistance is obtained. (author)

Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

Science.gov (United States)

Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

1999-09-01

A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Improving yield of PZT piezoelectric devices on glass substrates

Science.gov (United States)

Johnson-Wilke, Raegan L.; Wilke, Rudeger H. T.; Cotroneo, Vincenzo; Davis, William N.; Reid, Paul B.; Schwartz, Daniel A.; Trolier-McKinstry, Susan

2012-10-01

The proposed SMART-X telescope includes adaptive optics systems that use piezoelectric lead zirconate titanate (PZT) films deposited on flexible glass substrates. Several processing constraints are imposed by current designs: the crystallization temperature must be kept below 550 °C, the total stress in the film must be minimized, and the yield on 1 cm2 actuator elements should be work, RF magnetron sputtering was used to deposit films since chemical solution deposition (CSD) led to warping of large area flexible glass substrates. A PZT 52/48 film that wasdeposited at 4 mTorr and annealed at 550 °C for 24 hours showed no detectable levels of either PbO or pyrochlore second phases. Large area electrodes (1cm x 1 cm) were deposited on 4" glass substrates. Initially, the yield of the devices was low, however, two methods were employed to increase the yield to near 100 %. The first method included a more rigorous cleaning to improve the continuity of the Pt bottom electrode. The second method was to apply 3 V DC across the capacitor structure to burn out regions of defective PZT. The result of this latter method essentially removed conducting filaments in the PZT but left the bulk of the material undamaged. By combining these two methods, the yield on the large area electrodes improved from < 10% to nearly 100%.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

International Nuclear Information System (INIS)

Chun, Doo-Man; Sato, Masashi; Kanno, Isaku

2013-01-01

In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O 3 (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e 31,f ) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e 31,f of PZT thin films ranged from −6.5 to −14 C/m 2 as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e 31,f of thin films.

Control of mechanical response of freestanding PbZr0.52Ti0.48O3 films through texture

Science.gov (United States)

Das, Debashish; Sanchez, Luz; Martin, Joel; Power, Brian; Isaacson, Steven; Polcawich, Ronald G.; Chasiotis, Ioannis

2016-09-01

The texture of piezoelectric lead zirconate titanate (PZT) thin films plays a key role in their mechanical response and linearity in the stress vs. strain behavior. The open circuit mechanical properties of PZT films with controlled texture varying from 100% (001) to 100% (111) were quantified with the aid of direct strain measurements from freestanding thin film specimens. The texture was tuned using a highly {111}-textured Pt substrate and excess-Pb in the PbTiO3 seed layer. The mechanical and ferroelastic properties of 500 nm thick PZT (52/48) films were found to be strongly dependent on grain orientation: the lowest elastic modulus of 90 ± 2 GPa corresponded to pure (001) texture, and its value increased linearly with the percentage of (111) texture reaching 122 ± 3 GPa for pure (111) texture. These elastic modulus values were between those computed for transversely isotropic textured PZT films by using the soft and hard bulk PZT compliance coefficients. Pure (001) texture exhibited maximum non-linearity and ferroelastic domain switching, contrary to pure (111) texture that exhibited more linearity and the least amount of switching. A micromechanics model was employed to calculate the strain due to domain switching. The model fitted well the non-linearities in the experimental stress-strain curves of (001) and (111) textured PZT films, predicting 17% and 10% of switched 90° domains that initially were favorably aligned with the applied stress in (001) and (111) textured PZT films, respectively.

Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

International Nuclear Information System (INIS)

Lee, Sung Sik; Kim, Young H.

2005-01-01

In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

International Nuclear Information System (INIS)

Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

2004-01-01

Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

A spherically-shaped PZT thin film ultrasonic transducer with an acoustic impedance gradient matching layer based on a micromachined periodically structured flexible substrate.

Science.gov (United States)

Feng, Guo-Hua; Liu, Wei-Fan

2013-10-09

This paper presents the microfabrication of an acoustic impedance gradient matching layer on a spherically-shaped piezoelectric ultrasonic transducer. The acoustic matching layer can be designed to achieve higher acoustic energy transmission and operating bandwidth. Also included in this paper are a theoretical analysis of the device design and a micromachining technique to produce the novel transducer. Based on a design of a lead titanium zirconium (PZT) micropillar array, the constructed gradient acoustic matching layer has much better acoustic transmission efficiency within a 20-50 MHz operation range compared to a matching layer with a conventional quarter-wavelength thickness Parylene deposition. To construct the transducer, periodic microcavities are built on a flexible copper sheet, and then the sheet forms a designed curvature with a ball shaping. After PZT slurry deposition, the constructed PZT micropillar array is released onto a curved thin PZT layer. Following Parylene conformal coating on the processed PZT micropillars, the PZT micropillars and the surrounding Parylene comprise a matching layer with gradient acoustic impedance. By using the proposed technique, the fabricated transducer achieves a center frequency of 26 MHz and a -6 dB bandwidth of approximately 65%.

Thick-film analysis: literature search and bibliography

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

Influences of annealing temperature on characteristics of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr0.52Ti0.48)O3 thin films

International Nuclear Information System (INIS)

Kwak, Jin Ho; Han, Jin Kyu; Cho, Sam Yeon; Bu, Sang Don

2012-01-01

We report the synthesis and the characterization of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr 0.52 Ti 0.48 )O 3 (CNT-PZT) in a film structure. The CNT-PZT films were prepared by using a sol-gel process, a spin-coating method and a rapid thermal annealing process. CNT bundles in 2-methoxyethanol solution were mixed with a 7-wt% PZT sol-gel solution. The CNT-PZT solution was deposited onto (111) Pt/Ti/SiO 2 /Si substrates by spin-coating at 3000 rpm for 60 s and was then pyrolyzed. The samples were annealed at various temperatures in an oxygen atmosphere for crystallization. The morphological, structural and electrical properties of CNT-PZT composite films were studied with a field-emission scanning electron microscope, X-ray diffraction and polarization-voltage hysteresis loops, respectively. We found that, during the annealing process, the thickness of CNT-PZT films dramatically decrease, especially in the range of 500 to 600 .deg. C, which may be related with the loss of CNTs in that temperature region due to burning. The CNTs also affect the orientation of and the number of defects in the PZT films, which change the ferroelectric properties of the films.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Electrode contacts on ferroelectric Pb(Zr x Ti1−x )O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

OpenAIRE

Lee, J. J.; Thio, C. L.; Desu, Seshu B.

1995-01-01

The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1-x)O-3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-fiel...

Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates.

Science.gov (United States)

Nguyen, Minh D; Houwman, Evert P; Rijnders, Guus

2017-10-10

Thin films of PbZr 0 . 52 Ti 0 . 48 O 3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca 2 Nb 3 O 10 nanosheets as growth template and using LaNiO 3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain and ultra-low strain hysteresis. The observed increase of the piezoelectric coefficient with increasing film thickness is attributed to the reduction of clamping, because of the increasingly less dense columnar microstructure (more separation between the grains) with across the film thickness. A very large piezoelectric coefficient (490 pm/V) and a high piezoelectric strain (~0.9%) are obtained in 4-µm-thick film under an applied electric field of 200 kV/cm, which is several times larger than in usual PZT ceramics. Further very low strain hysteresis (H≈2-4%) is observed in 4 to 5 µm thick films. These belong to the best values demonstrated so far in piezoelectric films. Fatigue testing shows that the piezoelectric properties are stable up to 10 10 cycles. The growth of high quality PZT films with very large strain and piezoelectric coefficients, very low hysteresis and with long-term stability on a technologically important substrate as glass is of great significance for the development of practical piezo driven microelectromechanical actuator systems.

Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

Science.gov (United States)

Lian, Jianyun; Ponchel, Freddy; Tiercelin, Nicolas; Chen, Ying; Rémiens, Denis; Lasri, Tuami; Wang, Genshui; Pernod, Philippe; Zhang, Wenbin; Dong, Xianlin

2018-04-01

In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10-7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.

The Thickness Dependence of Optical Constants of Ultrathin Iron Films

International Nuclear Information System (INIS)

Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

2013-01-01

Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

Piezoelectric coefficients of multilayer Pb(Zr,Ti)O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Muensit, S. [Prince of Songkla University, Department of Physics, Songkhla (Thailand); NANOTEC Center of Excellence at Prince of Songkhla University, Songkhla (Thailand); Sukwisut, P.; Khaenamkeaw, P. [Prince of Songkla University, Department of Physics, Songkhla (Thailand); Lang, S.B. [Ben-Gurion University of the Negev, Department of Chemical Engineering, Beer Sheva (Israel)

2008-08-15

Sol-gel techniques were used to prepare thin films of Pb(Zr{sub x},Ti{sub 1-x})O{sub 3} (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d{sub 33} piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT(52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching. (orig.)

Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

Directory of Open Access Journals (Sweden)

Yen-Hua Chen

2012-01-01

Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal-Organic Chemical Vapor Deposition

Science.gov (United States)

Kuwabara, Hiroki; Sumi, Akihiro; Okamoto, Shoji; Hoko, Hiromasa; Cross, Jeffrey S.; Funakubo, Hiroshi

2009-04-01

Pb(Zr0.35Ti0.65)O3 (PZT) films 170 nm thick were prepared at 415 °C by pulsed metal-organic chemical vapor deposition. The (111)-oriented PZT films with local epitaxial growth were obtained on (111)SrRuO3/(111)Pt/TiO2/SiO2/Si substrates and their ferroelectricities were ascertained. Ferroelectricity was improved by postannealing under O2 gas flow up to 550 °C. Larger remanent polarization and better fatigue endurance were obtained using a SrRuO3 top electrode compared to a Pt top electrode for PZT films after annealing at 500 °C.

Optimizing Pt/TiO2 templates for textured PZT growth and MEMS devices

Science.gov (United States)

Potrepka, Daniel; Fox, Glenn; Sanchez, Luz; Polcawich, Ronald

2013-03-01

Crystallographic texture of lead zirconate titanate (PZT) thin films strongly influences piezoelectric properties used in MEMS applications. Textured growth can be achieved by relying on crystal growth habit and can also be initiated by the use of a seed-layer heteroepitaxial template. Template choice and the process used to form it determine structural quality, ultimately influencing performance and reliability of MEMS PZT devices such as switches, filters, and actuators. This study focuses on how 111-textured PZT is generated by a combination of crystal habit and templating mechanisms that occur in the PZT/bottom-electrode stack. The sequence begins with 0001-textured Ti deposited on thermally grown SiO2 on a Si wafer. The Ti is converted to 100-textured TiO2 (rutile) through thermal oxidation. Then 111-textured Pt can be grown to act as a template for 111-textured PZT. Ti and Pt are deposited by DC magnetron sputtering. TiO2 and Pt film textures and structure were optimized by variation of sputtering deposition times, temperatures and power levels, and post-deposition anneal conditions. The relationship between Ti, TiO2, and Pt texture and their impact on PZT growth will be presented. Also affiliated with U.S. Army Research Lab, Adelphi, MD 20783, USA

Film thickness determination by grazing incidence diffraction

Energy Technology Data Exchange (ETDEWEB)

Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

1996-09-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

Film thickness determination by grazing incidence diffraction

International Nuclear Information System (INIS)

Battiston, G. A.; Gerbasi, R.

1996-01-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

International Nuclear Information System (INIS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping. (orig.)

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

Science.gov (United States)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

Pulsed laser deposition of piezoelectric lead zirconate titanate thin films maintaining a post-CMOS compatible thermal budget

Science.gov (United States)

Schatz, A.; Pantel, D.; Hanemann, T.

2017-09-01

Integration of lead zirconate titanate (Pb[Zrx,Ti1-x]O3 - PZT) thin films on complementary metal-oxide semiconductor substrates (CMOS) is difficult due to the usually high crystallization temperature of the piezoelectric perovskite PZT phase, which harms the CMOS circuits. In this work, a wafer-scale pulsed laser deposition tool was used to grow 1 μm thick PZT thin films on 150 mm diameter silicon wafers. Three different routes towards a post-CMOS compatible deposition process were investigated, maintaining a post-CMOS compatible thermal budget limit of 445 °C for 1 h (or 420 °C for 6 h). By crystallizing the perovskite LaNiO3 seed layer at 445 °C, the PZT deposition temperature can be lowered to below 400 °C, yielding a transverse piezoelectric coefficient e31,f of -9.3 C/m2. With the same procedure, applying a slightly higher PZT deposition temperature of 420 °C, an e31,f of -10.3 C/m2 can be reached. The low leakage current density of below 3 × 10-6 A/cm2 at 200 kV/cm allows for application of the post-CMOS compatible PZT thin films in low power micro-electro-mechanical-systems actuators.

Effect of the Crystal Structure on the Electrical Properties of Thin-Film PZT Structures

Science.gov (United States)

Delimova, L. A.; Gushchina, E. V.; Zaitseva, N. V.; Seregin, D. S.; Vorotilov, K. A.; Sigov, A. S.

2018-03-01

A new method of two-stage crystallization of lead zirconate-titanate (PZT) films using a seed sublayer with a low excess lead content has been proposed and realized. A seed layer with a strong texture of perovskite Pe(111) grains is formed from a solution with a lead excess of 0-5 wt %; the fast growth of the grains is provided by the deposition of the main film from a solution with high lead content. As a result, a strong Pe(111) texture with complete suppression of the Pe(100) orientation forms. An analysis of current-voltage dependences of the transient currents and the distributions of the local conductivity measured by the contact AFM method reveals two various mechanisms of current percolation that are determined by traps in the bulk and at the perovskite grain interfaces.

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

Impedance Based Characterization of a High-Coupled Screen Printed PZT Thick Film Unimorph Energy Harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, R.; Borregaard, L. M.

2014-01-01

The single degree of freedom mass-spring-damper system is the most common approach for deriving a full electromechanical model for the piezoelectric vibration energy harvester. In this paper, we revisit this standard electromechanical model by focusing on the impedance of the piezoelectric device...... parameters which, by means of the piezoelectric impedance expression, all can be determined accurately by electrical measurements. It is shown how four of five lumped parameters can be determined from a single impedance measurement scan, considerably reducing the characterization effort. The remaining...... parameter is determined from shaker measurements, and a highly accurate agreement is found between model and measurements on a unimorph MEMS-based screen printed PZT harvester. With a high coupling term K-2 Q similar or equal to 7, the harvester exhibits two optimum load points. The peak power performance...

Filmes finos de LaNiO3 e PZT preparados pelo métodos das soluções precursoras poliméricas e depositados em substratos de silício

OpenAIRE

Souza, Éder Carlos Ferreira de [UNESP

2006-01-01

Nesta tese estudou-se a preparação de filmes finos de PZT não dopados e dopados com Nióbio, depositados sobre substratos de Pt/Ti/SiO2/Si para aplicações em memórias não voláteis de acesso randômico (NVRAM) e memórias ferroelétricas de acesso randômico (FeRAM). A dopagem dos filmes de PZT com Nióbio foi realizada visando obter valores ótimos nas propriedades ferroelétricas para a aplicação destes filmes como memórias ferroelétricas. Todavia, problemas como imprint, corrente de fuga e fadiga n...

Interferometric measurement of film thickness during bubble blowing

Science.gov (United States)

Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

2017-06-01

In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering

International Nuclear Information System (INIS)

Hase, Takashi; Shiosaki, Tadashi

1991-01-01

Ferroelectric Pb(Zr, Ti)O 3 [PZT] thin films have been prepared on Pt/Ti/SiO 2 /Si and Pt/SiO 2 /Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO 2 /Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 μm 2 , the switching time and the switched charge density measured were 20 ns and 10 μC/cm 2 , respectively. The switching time was strongly dependent on the electrode area. (author)

Optimization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin film by pulsed laser deposition for spin injection

Energy Technology Data Exchange (ETDEWEB)

Jain, Sourabh, E-mail: sourabhjain@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Himanshu [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Kumar Shukla, Amit [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Tomy, C.V. [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Palkar, V.R.; Tulapurkar, Ashwin [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2014-09-01

We have investigated low temperature magnetic properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) thin films on SrTiO{sub 3} (STO) substrate deposited by pulsed laser deposition (PLD). We observed a large change in the Curie temperature T{sub C} when the LSMO film thickness is reduced from 4 nm (T{sub C}∼280 K) to 2 nm (T{sub C} ∼100 K), which is a result of high strain present at the STO–LSMO interface. The presence of the strain is confirmed by a grazing angle X-ray diffraction (XRD) technique where a particular peak is shifted away from the bulk peak position as we decrease the thickness. In a LSMO/Pb[Zr{sub y}Ti{sub 1−y}]O{sub 3} (PZT)/LSMO magnetic tunnel junction (MTJ), these LSMO thin films can be used for spin injection into the tunnel barrier. Here spin current can be manipulated by changing the strain present at the LSMO–PZT interface by using piezoelectric properties of PZT.

NdFeB thick films prepared by tape casting

International Nuclear Information System (INIS)

Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

2003-01-01

NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

International Nuclear Information System (INIS)

Breiland, W.G.; Lee, S.R.; Koleske, D.D.

2004-01-01

When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

Science.gov (United States)

Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

2017-08-01

We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

Influence of irradiation on the switching behavior in PZT thin films

International Nuclear Information System (INIS)

Baturin, I.; Menou, N.; Shur, V.; Muller, C.; Kuznetsov, D.; Hodeau, J.-L.; Sternberg, A.

2005-01-01

Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O 3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Metalorganic solution deposition of lead zirconate titanate films onto an additively manufactured Ni-based superalloy

International Nuclear Information System (INIS)

Patel, T.; Khassaf, H.; Vijayan, S.; Bassiri-Gharb, N.; Aindow, M.; Alpay, S.P.; Hebert, R.J.

2017-01-01

Recent advances in additive manufacturing of high-temperature alloys for structural aerospace applications has led to interest in integrating additional functionality into such parts. Lead zirconate titanate (PZT) is a prototypical ferroelectric ceramic used as the electro-active material in many piezoelectric sensors and actuators. In this study, 300 nm thick PbZr_0_._2Ti_0_._8O_3 (PZT 20/80) films were grown using metalorganic solution deposition onto additively manufactured substrates of Inconel 718. The microstructures of the films and the nature of the film/substrate interfaces were characterized using a combination of X-ray diffraction and electron microscopy techniques. Electrical measurements were performed to determine the ferroelectric, dielectric, and conductive responses of the PZT films. Our findings show that the PZT films exhibit robust ferroelectricity characterized by well-defined polarization-applied electric field (P-E) hysteresis loops. The samples display internal bias of up to ∼40 kV/cm. The room temperature remnant polarization and the small signal dielectric permittivity are ∼70 μC/cm"2 and 205, respectively. The dielectric loss (tan δ) and the leakage current at 1 kHz are 9% and 1 nA at 1 V, respectively. We attribute the internal bias observed in the hysteresis loops and the overall large dielectric losses to the presence of an intermediate oxide layer at the PZT/Inconel interface, which forms during the high temperature crystallization of the ferroelectric film. These results show that it is possible to grow functional oxides with promising electrical properties onto additively manufactured metallic substrates.

A 2-D MEMS scanning mirror based on dynamic mixed mode excitation of a piezoelectric PZT thin film S-shaped actuator.

Science.gov (United States)

Koh, Kah How; Kobayashi, Takeshi; Lee, Chengkuo

2011-07-18

A novel dynamic excitation of an S-shaped PZT piezoelectric actuator, which is conceptualized by having two superimposed AC voltages, is characterized in this paper through the evaluation of the 2-D scanning characteristics of an integrated silicon micromirror. The device is micromachined from a SOI wafer with a 5 μm thick Si device layer and multilayers of Pt/Ti/PZT//Pt/Ti deposited as electrode and actuation materials. A large mirror (1.65 mm x 2mm) and an S-shaped PZT actuator are formed after the backside release process. Three modes of operation are investigated: bending, torsional and mixed. The resonant frequencies obtained for bending and torsional modes are 27Hz and 70Hz respectively. The maximum measured optical deflection angles obtained at 3Vpp are ± 38.9° and ± 2.1° respectively for bending and torsional modes. Various 2-D Lissajous patterns are demonstrated by superimposing two ac sinusoidal electrical signals of different frequencies (27 Hz and 70 Hz) into one signal to be used to actuate the mirror.

Influence of thickness on properties of plasticized oat starch films

Directory of Open Access Journals (Sweden)

Melicia Cintia Galdeano

2013-08-01

Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

Film thickness in gas-liquid two-phase flow, (2)

International Nuclear Information System (INIS)

Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

1977-01-01

The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

International Nuclear Information System (INIS)

Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

2006-01-01

A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

Barium titanate thick films prepared by screen printing technique

Directory of Open Access Journals (Sweden)

Mirjana M. Vijatović

2010-06-01

Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

Temperature- and thickness-dependent elastic moduli of polymer thin films

Directory of Open Access Journals (Sweden)

Ao Zhimin

2011-01-01

Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Sukon Phanichphant

2007-02-01

Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

Preparation and switching kinetics of Pb(Zr, Ti)O sub 3 thin films deposited by reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Hase, Takashi; Shiosaki, Tadashi [Kyoto Univ. (Japan). Faculty of Engineering

1991-09-01

Ferroelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films have been prepared on Pt/Ti/SiO{sub 2}/Si and Pt/SiO{sub 2}/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO{sub 2}/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 {mu}m{sup 2}, the switching time and the switched charge density measured were 20 ns and 10 {mu}C/cm{sup 2}, respectively. The switching time was strongly dependent on the electrode area. (author).

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

Energy Technology Data Exchange (ETDEWEB)

Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

A new attempt of measurement film thickness by x-ray diffractometry

International Nuclear Information System (INIS)

Kosaka, Masao; Kobayashi, Hideo

1987-01-01

In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM

Science.gov (United States)

Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling

2009-05-01

The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Effect of thickness on optical properties of thermally evaporated SnS films

International Nuclear Information System (INIS)

Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

2013-01-01

The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

Science.gov (United States)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Damage-free patterning of ferroelectric lead zirconate titanate thin films for microelectromechanical systems via contact printing

Science.gov (United States)

Welsh, Aaron

This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

International Nuclear Information System (INIS)

Lecarpentier, F.; Daglish, M.; Kemmitt, T.

2001-01-01

Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

High-throughput measurement of polymer film thickness using optical dyes

Science.gov (United States)

Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

2005-01-01

Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

Science.gov (United States)

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Nano-Hydroxyapatite Thick Film Gas Sensors

International Nuclear Information System (INIS)

Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

2011-01-01

In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

Self-Poling of BiFeO3 Thick Films.

Science.gov (United States)

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Measurement of the thickness of thin films by backscattered protons

International Nuclear Information System (INIS)

Samaniego, L.E.Q.

1976-07-01

The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

International Nuclear Information System (INIS)

Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

2011-01-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

Science.gov (United States)

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM

International Nuclear Information System (INIS)

Jia Ze; Ren Tianling; Liu Tianzhi; Hu Hong; Zhang Zhigang; Xie Dan; Liu Litian

2007-01-01

Oxidization for Ru through anneal with plenteous oxygen atmosphere and its application as the top electrode of sol-gel PZT capacitor are investigated in this study. PZT capacitor with RuO 2 or oxygen-doped Ru as top electrode can be obtained from Ru/PZT/Pt capacitor through slow-rate anneal at 650 deg. C for 20 min in cannulation furnace. It has larger remanent polarization, better rectangle shape, better fatigue properties and lower leakage current than the other capacitors with PZT film prepared by the same process and different top electrodes in this study. Plenteous oxygen atmosphere and 650 deg. C in cannulation furnace are important conditions for the oxidation of Ru and renewed crystallization of PZT in this capacitor. Plenteous oxygen at interface can compensate the oxygen vacancies at PZT/electrode interface, which results in the above good characteristics

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Science.gov (United States)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Intrinsic flux pinning mechanisms in different thickness MgB2 films

Directory of Open Access Journals (Sweden)

C. Yang

2017-03-01

Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

Science.gov (United States)

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

2014-08-01

We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

Ellipsometry non-destructive technique for PZT thin films investigations

Czech Academy of Sciences Publication Activity Database

Deineka, Alexander; Jastrabík, Lubomír; Soukup, Ladislav

11-12, - (2000), s. 329-331 ISSN 0447-6441 R&D Projects: GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : PZT * J.A. Wollam spectral ellipsometer * refractive index depth profiels Subject RIV: BM - Solid Matter Physics ; Magnetism

A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

OpenAIRE

Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

2001-01-01

A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

Micro-fabricated flexible PZT cantilever using d33 mode for energy harvesting

Science.gov (United States)

Cho, Hyunok; Park, Jongcheol; Park, Jae Yeong

2017-12-01

This paper presents a micro-fabricated flexible and curled PZT [Pb(Zr0.52Ti0.48)O3] cantilever using d33 piezoelectric mode for vibration based energy harvesting applications. The proposed cantilever based energy harvester consists of polyimide, PZT thin film, and inter-digitated IrOx electrodes. The flexible cantilever was formed using bulk-micromachining on a silicon wafer to integrate it with ICs. The d33 piezoelectric mode was applied to achieve a large output voltage by using inter-digitated electrodes, and the PZT thin film on polyimide layer has a remnant polarization and coercive filed of approximately 2 P r = 47.9 μC/cm2 and 2 E c = 78.8 kV/cm, respectively. The relative dielectric constant was 900. The fabricated micro-electromechanical systems energy harvester generated output voltages of 1.2 V and output power of 117 nW at its optimal resistive load of 6.6 MΩ from its resonant frequency of 97.8 Hz with an acceleration of 5 m/s2.

Bulk dielectric and magnetic properties of PFW-PZT ceramics: absence of magnetically switched-off polarization.

Science.gov (United States)

Kempa, M; Kamba, S; Savinov, M; Maryško, M; Frait, Z; Vaněk, P; Tomczyk, M; Vilarinho, P M

2010-11-10

We investigated ceramics samples of solid solutions of [PbFe(2/3)W(1/3)O(3)](x)-[PbZr(0.53)Ti(0.47)O(3)](1 - x) (PFW(x)-PZT(1 - x), x = 0.2 and 0.3) by means of broad-band dielectric spectroscopy, differential scanning calorimetry and SQUID magnetometry. We did not confirm the observations of Kumar et al (2009 J. Phys.: Condens. Matter 21 382204), who reported on reversible suppression of ferroelectric polarization in polycrystalline PFW(x)-PZT(1 - x) thin films for magnetic fields above 0.5 T. We did not observe any change of ferroelectric polarization with external magnetic fields up to 3.2 T. Pirc et al (2009 Phys. Rev. B 79 214114) developed a theory explaining the reported large magnetoelectric effect in PFW(x)-PZT(1 - x), taking into account relaxor magnetic and relaxor ferroelectric properties of the system. Our data revealed classical ferroelectric properties below 525 K and 485 K in samples with x = 0.2 and 0.3, respectively. Moreover, paramagnetic behavior was observed down to 4.5 K instead of previously reported relaxor magnetic behavior. It seems that the reported switching-off of ferroelectric polarization in PFW(x)-PZT(1 - x) thin films is not an intrinsic property, but probably an effect of electrodes, interlayers, grain boundaries or second phases presented in polycrystalline thin films.

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

International Nuclear Information System (INIS)

Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

2008-01-01

Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

Thickness dependent ferromagnetism in thermally decomposed NiO thin films

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

2016-11-15

We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

International Nuclear Information System (INIS)

Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

1977-01-01

The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

Science.gov (United States)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

Simulation and fabrication of 0-3 composite PZT films for ultrahigh frequency (100-300 MHz) ultrasonic transducers

Science.gov (United States)

Chen, Xiaoyang; Fei, Chunlong; Chen, Zeyu; Chen, Ruimin; Yu, Ping; Chen, Zhongping; Shung, K. Kirk; Zhou, Qifa

2016-03-01

This paper presents simulation, fabrication, and characterization of single-element ultrahigh frequency (100-300-MHz) needle ultrasonic transducers based on 0-3 composite Pb(Zr0.52Ti0.48)O3 (PZT) films prepared by using composite ceramic sol-gel film and sol-infiltration technique. The center frequency of the developed transducer at 300-MHz was the highest frequency of PbTiO3 ceramic-based ultrasonic transducers ever reported. Furthermore, a brief description of the composite model was followed by the development of a new expression for predicting the longitudinal velocity, the clamped dielectric constant, and the complex electromechanical coupling coefficient kt of these films, which is very important in ultrasonic transducer design. Moreover, these parameters are difficult to obtain by measuring the frequency dependence of impedance and phase angle because of the weak signal of the previous 0-3 composite films transducer (>100 MHz). The modeling results show that the Cubes model with a geometric factor n = 0.05 fits well with the measured data. This model will be helpful for developing the 0-3 composite systems for ultrahigh frequency ultrasonic transducer design.

Percolation effect in thick film superconductors

Energy Technology Data Exchange (ETDEWEB)

Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

Percolation effect in thick film superconductors

International Nuclear Information System (INIS)

Sali, R.; Harsanyi, G.

1994-01-01

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

Thickness dependence of J_c (0) in MgB_2 films

International Nuclear Information System (INIS)

Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

2016-01-01

Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

Science.gov (United States)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

Multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 layers for tunable applications

Science.gov (United States)

Yu, Shihui; Li, Lingxia; Zhang, Weifeng; Sun, Zheng; Dong, Helei

2015-01-01

The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability = 49.7% at 500 kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500 kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices. PMID:25960043

Mechanical and electrical strain response of a piezoelectric auxetic PZT lattice structure

Science.gov (United States)

Fey, Tobias; Eichhorn, Franziska; Han, Guifang; Ebert, Kathrin; Wegener, Moritz; Roosen, Andreas; Kakimoto, Ken-ichi; Greil, Peter

2016-01-01

A two-dimensional auxetic lattice structure was fabricated from a PZT piezoceramic. Tape casted and sintered sheets with a thickness of 530 μm were laser cut into inverted honeycomb lattice structure with re-entrant cell geometry (θ = -25°) and poling direction oriented perpendicular to the lattice plane. The in-plane strain response upon applying an uniaxial compression load as well as an electric field perpendicular to the lattice plane were analyzed by a 2D image data detection analysis. The auxetic lattice structure exhibits orthotropic deformation behavior with a negative in-plane Poisson’s ratio of -2.05. Compared to PZT bulk material the piezoelectric auxetic lattice revealed a strain amplification by a factor of 30-70. Effective transversal coupling coefficients {{d}al}31 of the PZT lattice exceeding 4 × 103 pm V-1 were determined which result in an effective hydrostatic coefficient {{d}al}h 66 times larger than that of bulk PZT.

Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

Directory of Open Access Journals (Sweden)

M. M. Zhu

2011-12-01

Full Text Available Pb(Zr1-xTixO3 (PZT thin films near phase morphotropic phase boundary were deposited on (Pb0.86La0.14TiO3-coated glass by radio frequency sputtering. A retrieved analysis shows that the lattice parameters of the as-grown PZT thin films were similar to that of monoclinic PZT structure. Moreover, the PZT thin films possessed refractive index as high as 2.504 in TE model and 2.431 in TM model. The as-grown PZT thin film had one strong absorption peak at 632.6 nm, which attributed to lead deficiency by quantitative XPS analysis. From the attractive properties achieved, electro-optic and photovoltaic characteristic of the films were carried out.

A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

International Nuclear Information System (INIS)

Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

1988-01-01

Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

Anomalous size effect in conductivity of Bi films of small thickness

International Nuclear Information System (INIS)

Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

1995-01-01

Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

Hexaferrite multiferroics: from bulk to thick films

Science.gov (United States)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

Energy Technology Data Exchange (ETDEWEB)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

2016-02-21

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

International Nuclear Information System (INIS)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

2016-01-01

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Epitaxial Pb(Zr,Ti)O3 thin films for a MEMS application

International Nuclear Information System (INIS)

Nguyen, Minh D; Vu, Hung N; Blank, Dave H A; Rijnders, Guus

2011-01-01

This research presents the deposition and device fabrication of epitaxial Pb(Zr,Ti)O 3 (PZT) thin films for applications in microelectromechanical systems (MEMS). A piezoelectric micro-membrane is described as an example. Using the pulsed laser deposition (PLD) technique and the MEMS microfabrication process, the piezo-membranes with diameters ranging from 200 to 500 μm were obtained. The displacement of piezo-membranes increased from 5.1 to 17.5 nm V −1 with a piezoelectric-membrane diameter in the range of 200–500 μm. Furthermore, the effect of PZT film-thickness on the mechanical properties has been investigated. By using the conductive-oxide SrRuO 3 (SRO) layers as the electrodes, the degradation of both ferroelectric and piezoelectric properties is prevented up to 10 10 switching cycles

The effect of bubble acceleration on the liquid film thickness in micro tubes

Energy Technology Data Exchange (ETDEWEB)

Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

2010-08-15

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

The effect of bubble acceleration on the liquid film thickness in micro tubes

International Nuclear Information System (INIS)

Han, Youngbae; Shikazono, Naoki

2010-01-01

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

Magnetoelectric coupling in layered LSMO/PZT nanostructures

International Nuclear Information System (INIS)

Leufke, Philipp M.

2014-01-01

Multiferroic thin film composites with electric field-effect driven magnetoelectric (ME) coupling offer the possibility to reversibly tune magnetic properties in materials intended for device applications. The structural and functional versatility of such artificial heterostructures makes them attractive not only for various data processing, storage and sensor applications but also for studying the fundamental ME coupling mechanisms. La 1-x Sr x MnO 3 (LSMO)/PbZr y Ti 1-y O 3 (PZT) is an ideal choice for such a composite, combining the unrivaled ferroelectric (FE) properties of PZT with the multiple electronic and magnetic phenomena exhibited by the mixed valency manganite LSMO. The main physical feature used in realization of the LSMO/PZT ME composites is a striking sensitivity of LSMO magnetism to the charge carrier density. Here, the low-doping region is of particular interest, where the competition between the fundamental magnetic coupling mechanisms, Double-Exchange (DE) versus Superexchange (SE), is most distinctive. In the present work an unconventional sputtering technique - the Large-Distance Magnetron Sputtering (LDMS) method - has been established, which allowed for epitaxial deposition of these heterostructures with highest crystallinity and markedly smooth interfaces, necessary for effective field-effect control of magnetism. The large target-substrate distance effectively suppressed the destructive oxygen ion bombardment, inherently connected with oxide sputtering, and yielded an outstanding lateral uniformity of the film stack. The latter was vital for the fabrication of large capacitor structures of several square millimeter area that were required for detecting the ME coupling in a Superconductive Quantum Interference Device (SQUID) magnetometer. The growth of LSMO on various single crystalline substrates was mastered by exploring a vast deposition parameter space, encompassing Radio Frequency (RF) and Direct Current (DC) sputtering. Commensurately

Magnetoelectric coupling in layered LSMO/PZT nanostructures

Energy Technology Data Exchange (ETDEWEB)

Leufke, Philipp M.

2014-01-29

Multiferroic thin film composites with electric field-effect driven magnetoelectric (ME) coupling offer the possibility to reversibly tune magnetic properties in materials intended for device applications. The structural and functional versatility of such artificial heterostructures makes them attractive not only for various data processing, storage and sensor applications but also for studying the fundamental ME coupling mechanisms. La{sub 1-x}Sr{sub x}MnO{sub 3} (LSMO)/PbZr{sub y}Ti{sub 1-y}O{sub 3} (PZT) is an ideal choice for such a composite, combining the unrivaled ferroelectric (FE) properties of PZT with the multiple electronic and magnetic phenomena exhibited by the mixed valency manganite LSMO. The main physical feature used in realization of the LSMO/PZT ME composites is a striking sensitivity of LSMO magnetism to the charge carrier density. Here, the low-doping region is of particular interest, where the competition between the fundamental magnetic coupling mechanisms, Double-Exchange (DE) versus Superexchange (SE), is most distinctive. In the present work an unconventional sputtering technique - the Large-Distance Magnetron Sputtering (LDMS) method - has been established, which allowed for epitaxial deposition of these heterostructures with highest crystallinity and markedly smooth interfaces, necessary for effective field-effect control of magnetism. The large target-substrate distance effectively suppressed the destructive oxygen ion bombardment, inherently connected with oxide sputtering, and yielded an outstanding lateral uniformity of the film stack. The latter was vital for the fabrication of large capacitor structures of several square millimeter area that were required for detecting the ME coupling in a Superconductive Quantum Interference Device (SQUID) magnetometer. The growth of LSMO on various single crystalline substrates was mastered by exploring a vast deposition parameter space, encompassing Radio Frequency (RF) and Direct Current (DC

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

Science.gov (United States)

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Fabrication of In(0.75)Zn(1.5)Sn(1.0) (IZTO) Thin-Film Transistors Using Solution-Processable Materials and PZT Inkjet-Printing.

Science.gov (United States)

Lee, Tai-Kuang; Liuand, Chao-Te; Lee, Wen-Hsi

2017-01-01

Recently, Thin Film Transistors (TFTs) have been studied widely because of potential applications in low cost, low-temperature process and flexible displays. They can be fabricated by easy processes based on solution methods. But the mobility of organic TFTs is lower and the threshold voltage is higher than amorphous Si TFTs. In order to enhance the channel mobility and satisfy with the requirement of low-cost fabrication, we prepare a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. In our investigations, we attempt to obtain a high performance and low-cost TFT via preparing materials, designing device structure, and using PZT inkjet-printing technology. A stable and non-precipitated metal oxide ink with appropriate doping was prepared for the fabrication of an InxZn1.5Sn1.0 (IZTO) by PZT inkjet-printing. The soluble direct-printing process is a powerful tool for material research and implies that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications. Transparent materials including dielectric PVP, conductive carbon nanotube (CNT) and active IZTO were employed into the fabrication of our PZT inkjet-printing process. After annealed at 180 °C, The experimental all-printed TFT exhibit the carrier mobility of 0.194 cm2/Vs, sub-threshold slope of 20 V/decade, and the threshold voltage of 5 V, initially. All-inkjet-printed films have great transparency, potentially in transparent electronics and the transmittance pattern in visible part of the spectrum (400–700 nm) is over 80%.

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya

2012-06-19

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

International Nuclear Information System (INIS)

Bursill, L.A.; Reaney, I.M.

1994-01-01

High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO 2 /SiO 2 /Si and PZT/Pt/Ti/SiO 2 /Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO 2 electrodes. The RuO 2 /PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO 2 and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb 2 ZrTiO 7-x (x ≠ 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO 2 /Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO 2 /SiO 2 /Si thin films are discussed. 13 refs; 7 figs

Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

Energy Technology Data Exchange (ETDEWEB)

Bursill, L A; Reaney, I M

1994-12-31

High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO{sub 2}/SiO{sub 2}/Si and PZT/Pt/Ti/SiO{sub 2}/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO{sub 2} electrodes. The RuO{sub 2}/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO{sub 2} and PZT, as evidenced by the atomic resolution images as well as energy dispersive X-ray analysis. A nanocrystalline pyrochlore phase Pb{sub 2}ZrTiO{sub 7-x} (x {ne} 1) was found on the top surface of the PZT layer. The PZT/Pt/Ti/SiO{sub 2}/Si thin film was well-crystallized and showed sharp interfaces throughout. Possible reasons for the improved fatigue characteristics of PZT/RuO{sub 2}/SiO{sub 2}/Si thin films are discussed. 13 refs; 7 figs.

Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

Directory of Open Access Journals (Sweden)

Robert Koncki

2006-04-01

Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

Science.gov (United States)

Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

1993-07-01

Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

Thick-film effects in the oxidation and hydriding of zirconium alloys

International Nuclear Information System (INIS)

Johnson, A.B. Jr.

1989-08-01

One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

International Nuclear Information System (INIS)

Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

2014-01-01

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

Science.gov (United States)

Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

2018-05-01

The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

Science.gov (United States)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Imaging and thickness measurement of amorphous intergranular films using TEM

International Nuclear Information System (INIS)

MacLaren, I.

2004-01-01

Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

Magnetoelectric properties of magnetic/ferroelectric multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Hwang, Sung-Ok; Eum, You-Jeong; Koo, Chang-Young; Lee, Hee-Young [Yeungnam University, Gyeongsan (Korea, Republic of); Park, Jung-Min [Osaka University, Osaka (Japan); Ryu, Jung-Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of)

2014-07-15

Magnetic/ferroelectric multilayer thin films using PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) and two different magnetic materials, i.e., Terfenol-D and CuFe{sub 2}O{sub 4} (CuFO) layers, were fabricated, and their magnetoelectric (ME) coupling behavior was investigated. The PZT layer was first coated onto Pt/Ti/SiO{sub 2}/Si substrate by sol-gel spin coating method. Pt layer, which served as an electrode and a diffusion barrier, was grown on the PZT layer by using the ion-beam sputtering method. The ME voltage coefficients were calculated from the ME voltage data measured utilizing a magnetoelectric test system. The Terfenol-D/Pt/PZT films were found to show a higher in-plane ME voltage coefficient than that the CuFO/Pt/PZT films due primarily to the higher magnetostriction coefficient of Terfenol-D.

MEMS Cantilever Sensor for THz Photoacoustic Chemical Sensing and Spectroscopy

Science.gov (United States)

2013-12-26

texture for the preferential crystal formation of the PZT . Deposited by chemical solution deposition (sol-gel), a 1 μm thick PZT film was used as the...Potrepka, G. R. Fox, I. Takeuchi and R. G. Polcawich. "Improving PZT thin film texture through Pt metallization and seed layers," MRS Proceedings (1299... PZT thin film," Journal of the European Ceramic Society 24(6), pp. 993-997, 2004. [73] Q. Wang, X. Du, B. Xu and L. E. Cross. "Theoretical analysis

Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Phelan, P.E.; Chen, G.; Tien, C.L.

1991-01-01

Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

Structural and electrical characterization of PZT on gold for micromachined piezoelectric membranes

International Nuclear Information System (INIS)

Robinson, M.C.; Morris, D.J.; Hayenga, P.D.; Cho, J.H.; Richards, C.D.; Richards, R.F.; Bahr, D.F.

2006-01-01

Piezoelectric membranes have been fabricated that incorporate a gold bottom electrode with an adhesion layer of titanium-tungsten (10:90 wt. %). For solution-deposited acetic acid based lead zirconate titanate (HoAc-PZT) with a Zr:Ti ratio of 40:60, the film's average piezoelectric coefficient, e 31 , is -5.31 C/m 2 , with a dielectric constant of 814 at 200 Hz, which is similar to values for platinum bottom electrodes. The PZT structure remains columnar on both types of bottom electrodes. Initial fabrication attempts resulted in cracking that initiated in the PZT layer of the structure. X-ray photoelectron spectroscopy was utilized to establish how processing affects diffusion throughout the composite membrane structure. Crack-free membranes were fabricated and tested. This paper discusses the performance properties and piezoelectric fatigue results for these membranes. (orig.)

Multi-photon vertical cross-sectional imaging with a dynamically-balanced thin-film PZT z-axis microactuator.

Science.gov (United States)

Choi, Jongsoo; Duan, Xiyu; Li, Haijun; Wang, Thomas D; Oldham, Kenn R

2017-10-01

Use of a thin-film piezoelectric microactuator for axial scanning during multi-photon vertical cross-sectional imaging is described. The actuator uses thin-film lead-zirconate-titanate (PZT) to generate upward displacement of a central mirror platform, micro-machined from a silicon-on-insulator (SOI) wafer to dimensions compatible with endoscopic imaging instruments. Device modeling in this paper focuses on existence of frequencies near device resonance producing vertical motion with minimal off-axis tilt even in the presence of multiple vibration modes and non-uniformity in fabrication outcomes. Operation near rear resonance permits large stroke lengths at low voltages relative to other vertical microactuators. Highly uniform vertical motion of the mirror platform is a key requirement for vertical cross-sectional imaging in the remote scan architecture being used for multi-photon instrument prototyping. The stage is installed in a benchtop testbed in combination with an electrostatic mirror that performs in-plane scanning. Vertical sectional images are acquired from 15 μm diameter beads and excised mouse colon tissue.

Thickness dependence of Hall mobility of HWE grown PbTe films

International Nuclear Information System (INIS)

Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

1985-01-01

Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

Thickness of residual wetting film in liquid-liquid displacement

Science.gov (United States)

Beresnev, Igor; Gaul, William; Vigil, R. Dennis

2011-08-01

Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

Science.gov (United States)

Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

2017-09-01

In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

Comparison of different methods for measuring the passive film thickness on metals

International Nuclear Information System (INIS)

Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

2016-01-01

Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

Application of β plastic film thickness gauge in automatic production of agricultural film

International Nuclear Information System (INIS)

Liu Longzhi; Guo Juhao

1996-01-01

The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

NARCIS (Netherlands)

Leeuwen, van H.J.

2011-01-01

The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

Science.gov (United States)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Science.gov (United States)

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Directory of Open Access Journals (Sweden)

Gunter Hagen

2011-08-01

Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Screen-printed piezoceramic thick films for miniaturised devices

DEFF Research Database (Denmark)

Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

2007-01-01

machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

Far infrared and Raman response in tetragonal PZT ceramic films

Czech Academy of Sciences Publication Activity Database

Buixaderas, Elena; Kadlec, Christelle; Vaněk, Přemysl; Drnovšek, S.; Uršič, H.; Malič, B.

2015-01-01

Roč. 54, č. 6 (2015), s. 219-224 ISSN 0366-3175 R&D Projects: GA ČR(CZ) GA14-25639S Institutional support: RVO:68378271 Keywords : dielectric response * phonons * FIR spectroscopy * time-domain THz spectroscopy * Raman spectroscopy * effective medium * PZT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.280, year: 2015

Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

International Nuclear Information System (INIS)

Liang, C.-S.; Wu, J.-M.

2005-01-01

Highly non-(001)-oriented Pb(Zr,Ti)O 3 (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO 3 (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films

Influence of cement film thickness on the retention of implant-retained crowns.

Science.gov (United States)

Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

2013-12-01

The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

Fabrication of thick superconducting films by decantation

Directory of Open Access Journals (Sweden)

Julián Betancourt M.

1991-07-01

Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

Properties of conductive thick-film inks

Science.gov (United States)

Holtze, R. F.

1972-01-01

Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

Enhanced electrical properties in bilayered ferroelectric thin films

Science.gov (United States)

Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

2013-03-01

Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

OpenAIRE

Anuj Chopra; Muharrem Bayraktar; Maarten Nijland; Johan E. ten Elshof; Fred Bijkerk; Guus Rijnders

2016-01-01

Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas n...

Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

International Nuclear Information System (INIS)

Srivastava, R.P.; De Wagter, C.

2012-01-01

The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

Science.gov (United States)

Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

2015-10-01

We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1-x)O3 thin films

International Nuclear Information System (INIS)

Gong Wen; Li Jingfeng; Chu Xiangcheng; Gui Zhilun; Li Longtu

2004-01-01

Lead zirconate titanate [Pb(Zr x Ti 1-x )O 3 , PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO 2 /Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films' texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed

Effect of thickness on structural and electrical properties of Al-doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes

OpenAIRE

Bursill, Les A.; Reaney, Ian M.; Vijay, Dilip P.; Desu, Seshu B.

1994-01-01

High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understanding the improved fatigue characteristics of PZT thin films with RuO2 electrodes. The RuO2/PZT interface consists of a curved pseudoperiodic minimal surface. The interface is chemically sharp with virtually no intermixing of RuO2 and PZT, as eviden...

Metallic oxide switches using thick film technology

Science.gov (United States)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Persistent quantum-size effect in aluminum films up to twelve atoms thick

International Nuclear Information System (INIS)

Boettger, J.C.

1996-01-01

Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

Science.gov (United States)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

The research of device for measuring film thickness of intelligent coating machine

Directory of Open Access Journals (Sweden)

Wang Wanjun

2015-01-01

Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

Fabrication and Evaluation of One-Axis Oriented Lead Zirconate Titanate Films Using Metal-Oxide Nanosheet Interface Layer

Science.gov (United States)

Minemura, Yoshiki; Nagasaka, Kohei; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi

2013-09-01

Nanosheet Ca2Nb3O20 (ns-CN) layers with pseudo-perovskite-type crystal configuration were applied on the surface of polycrystalline metal substrates to achieve preferential crystal orientation of Pb(Zr,Ti)O3 (PZT) films for the purpose of enhanced ferroelectricity comparable to that of epitaxial thin films. PZT films with tetragonal symmetry (Zr/Ti=0.40:0.60) were fabricated by chemical solution deposition (CSD) on ns-CN-buffered Inconel 625 and SUS 316L substrates, while ns-CN was applied on the the substrates by dip-coating. The preferential crystal growth on the ns-CN layer can be achieved by favorable lattice matching between (001)/(100)PZT and (001)ns-CN planes. The degree of (001) orientation was increased for PZT films on ns-CN/Inconel 625 and ns-CN/SUS 316L substrates, whereas randomly-oriented PZT films with a lower degree of (001) orientation were grown on bare and Inconel 625 films. Enhanced remanent polarization of 60 µC/cm2 was confirmed for the PZT films on ns-CN/metal substrates, ascribed to the preferential alignment of the polar [001] axis normal to the substrate surface, although it also suffered from higher coercive field above 500 kV/cm caused by PZT/metal interfacial reaction.

Temperature Dependent Electrical Properties of PZT Wafer

Science.gov (United States)

Basu, T.; Sen, S.; Seal, A.; Sen, A.

2016-04-01

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

Science.gov (United States)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2011-06-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

Hydroxyapatite screen-printed thick films: optical and electrical properties

International Nuclear Information System (INIS)

Silva, C.C.; Rocha, H.H.B.; Freire, F.N.A.; Santos, M.R.P.; Saboia, K.D.A.; Goes, J.C.; Sombra, A.S.B.

2005-01-01

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al 2 O 3 substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials

Hydroxyapatite screen-printed thick films: optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Silva, C.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Freire, F.N.A. [Departamento de Quimica Orga-circumflex nica e Inorga-circumflex nica-UFC, Caixa Postal 6030, CEP 60455-760, Fortaleza, Ceara (Brazil); Santos, M.R.P. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Saboia, K.D.A. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Goes, J.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Sombra, A.S.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil)]. E-mail: sombra@fisica.ufc.br

2005-07-15

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al{sub 2}O{sub 3} substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials.

Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

NARCIS (Netherlands)

King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

Directory of Open Access Journals (Sweden)

G. H. JAIN

2008-04-01

Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

Directory of Open Access Journals (Sweden)

D. N. Chavan

2011-02-01

Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

International Nuclear Information System (INIS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-01-01

An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

Science.gov (United States)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Polarization characterization of PZT disks and of embedded PZT plates by thermal wave methods

International Nuclear Information System (INIS)

Eydam, Agnes; Suchaneck, Gunnar; Gerlach, Gerald; Esslinger, Sophia; Schönecker, Andreas; Neumeister, Peter

2014-01-01

In this work, the thermal wave method was applied to characterize PZT disks and embedded PZT plates with regard to the polarization magnitude and spatial homogeneity. The samples were exposed to periodic heating by means of a laser beam and the pyroelectric response was determined. Thermal relaxation times (single time constants or distributions of time constants) describe the heat losses of the PZT samples to the environment. The resulting pyroelectric current spectrum was fitted to the superposition of thermal relaxation processes. The pyroelectric coefficient gives insight in the polarization distribution. For PZT disks, the polarization distribution in the surface region showed a characteristic decrease towards the electrodes

Biotemplated synthesis of PZT nanowires.

Science.gov (United States)

Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

2013-01-01

Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

Thin dielectric film thickness determination by advanced transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

2003-09-01

High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

Science.gov (United States)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

2014-07-21

A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

Science.gov (United States)

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

2012-01-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

2012-09-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

International Nuclear Information System (INIS)

Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2013-01-01

Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

Ethanol vapour sensing properties of screen printed WO 3 thick films

Indian Academy of Sciences (India)

The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

Tailoring the light absorption of Ag-PZT thin films by controlling the growth of hexagonal- and cubic-phase Ag nanoparticles

Science.gov (United States)

Hu, Tao; Wang, Zongrong; Ma, Ning; Du, Piyi

2017-12-01

PbZr0.52Ti0.48O3 thin films containing hexagonal and cubic Ag nanoparticles (Ag NPs) of various sizes were prepared using the sol-gel technique. During the aging process, Ag ions were photo-reduced to form hexagonal Ag NPs. These NPs were uniform in size, and their uniformity was maintained in the thin films during the heat treatment process. Both the total volume and average size of the hexagonal Ag NPs increased with an increasing Ag ion concentration from 0.02 to 0.08 mol l-1. Meanwhile, the remaining Ag ions were reduced to form unstable Ag-Pb alloy particles with Pb ions during the early heating stage. During subsequent heat treatment, these alloys decomposed to form cubic Ag NPs in the thin films. The absorption range of the thin films, quantified as the full width at half maximum in the ultraviolet-visible absorption spectrum, expanded from 6.3 × 1013 Hz (390-425 nm) to 8.4 × 1013 Hz (383-429 nm) as the Ag NPs/PZT ratio increased from 0.2 to 0.8. This work provides an effective way to broaden the absorption range and enhance the optical properties of such films.

Tailoring the light absorption of Ag-PZT thin films by controlling the growth of hexagonal- and cubic-phase Ag nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hu, Tao; Wang, Zongrong; Ma, Ning; Du, Piyi [Zhejiang University, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Hangzhou (China)

2017-12-15

PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} thin films containing hexagonal and cubic Ag nanoparticles (Ag NPs) of various sizes were prepared using the sol-gel technique. During the aging process, Ag ions were photo-reduced to form hexagonal Ag NPs. These NPs were uniform in size, and their uniformity was maintained in the thin films during the heat treatment process. Both the total volume and average size of the hexagonal Ag NPs increased with an increasing Ag ion concentration from 0.02 to 0.08 mol l{sup -1}. Meanwhile, the remaining Ag ions were reduced to form unstable Ag-Pb alloy particles with Pb ions during the early heating stage. During subsequent heat treatment, these alloys decomposed to form cubic Ag NPs in the thin films. The absorption range of the thin films, quantified as the full width at half maximum in the ultraviolet-visible absorption spectrum, expanded from 6.3 x 10{sup 13} Hz (390-425 nm) to 8.4 x 10{sup 13} Hz (383-429 nm) as the Ag NPs/PZT ratio increased from 0.2 to 0.8. This work provides an effective way to broaden the absorption range and enhance the optical properties of such films. (orig.)

Towards a new thickness-independent gamma radiation plastic film dosimeter

International Nuclear Information System (INIS)

Vieira, Marli Barbosa; Araujo, Patricia L.; Araujo, Elma S.

2013-01-01

A 100% national single-use gamma radiation plastic film dosimeter is presented in this work. A new approach for the development of this material allowed a step forward in the performance of poly (methyl metacrylate) films (PMMA) colored with bromothymol blue (BTB) acid-base indicator. We manage to improve dosimeter performance by introducing a gamma radiation insensitive dye to compensate film thickness variations. By doing so, we were able to obtain consistent dose-response correlations within a set of samples presenting 46 to 110 micrometers in thickness. Hence, our PMMA/BTB-P film dosimeter is suitable to measure absorbed dose in the 2-100kGy range even when film thickness undergoes more than 100% of variation. In addition, dose response data remain practically unaltered for four months after the exposure, when dosimeter films are kept in dark conditions and under refrigeration. The radiation effects on the optical properties were evaluated for Ultraviolet-Visible (UV-Vis) spectrophotometric analysis. Data of characteristic dose-response correlation in terms of changes in the maximum UV-Vis absorption due to radiation, and stability in time are also described. This potential new product is a promising tool for industrial radiation facilities, especially in gamma sterilization of medical supplies. (author)

Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

Science.gov (United States)

Lee, Sang Heon

2013-05-01

BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

Science.gov (United States)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

International Nuclear Information System (INIS)

Kobayashi, T; Maeda, R; Itoh, T

2008-01-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 V pp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 10 7 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method

Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O3 films

International Nuclear Information System (INIS)

Yamada, Tomoaki; Yasumoto, Jun; Ito, Daisuke; Yoshino, Masahito; Nagasaki, Takanori; Sakata, Osami; Imai, Yasuhiko; Kiguchi, Takanori; Shiraishi, Takahisa; Shimizu, Takao; Funakubo, Hiroshi

2015-01-01

The converse piezoelectric responses of (111)- and (001)-epitaxial tetragonal Pb(Zr 0.35 Ti 0.65 )O 3 [PZT] films were compared to investigate the orientation dependence of the substrate clamping effect. Synchrotron X-ray diffraction (XRD) and piezoelectric force microscopy revealed that the as-grown (111)-PZT film has a polydomain structure with normal twin boundaries that are changed by the poling process to inclined boundaries, as predicted by Romanov et al. [Phys. Status Solidi A 172, 225 (1999)]. Time-resolved synchrotron XRD under bias voltage showed the negligible impact of substrate clamping on the piezoelectric response in the (111)-PZT film, unlike the case for (001)-PZT film. The origin of the negligible clamping effect in the (111)-PZT film is discussed from the viewpoint of the elastic properties and the compensation of lattice distortion between neighboring domains

Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

International Nuclear Information System (INIS)

Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

2015-01-01

Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

BaF2 POST-DEPOSITION REACTION PROCESS FOR THICK YBCO FILMS

International Nuclear Information System (INIS)

SUENAGA, M.; SOLOVYOV, V.F.; WU, L.; WIESMANN, H.J.; ZHU, Y.

2001-01-01

The basic processes of the so-called BaF 2 process for the formation of YBa 2 Cu 3 O 7 , YBCO, films as well as its advantages over the in situ formation processes are discussed in the previous chapter. The process and the properties of YBCO films by this process were also nicely described in earlier articles by R. Feenstra, (et al.) Here, we will discuss two pertinent subjects related to fabrication of technologically viable YBCO conductors using this process. These are (1) the growth of thick (>> 1 microm) c-axis-oriented YBCO films and (2) their growth rates. Before the detail discussions of these subjects are given, we first briefly discuss what geometrical structure a YBCO-coated conductor should be. Then, we will provide examples of simple arguments for how thick the YBCO films and how fast their growth rates need to be. Then, the discussions in the following two sections are devoted to: (1) the present understanding of the nucleation and the growth process for YBCO, and why it is so difficult to grow thick c-axis-oriented films (> 3 microm), and (2) our present understanding of the YBCO growth-limiting mechanism and methods to increase the growth rates. The values of critical-current densities J c in these films are of primary importance for the applications,. and the above two subjects are intimately related to the control of J c of the films. In general, the lower the temperatures of the YBCO formation are the higher the values of J c of the films. Thus, the present discussion is limited to those films which are reacted at ∼735 C. This is the lowest temperature at which c-axis-oriented YBCO films (1-3 microm thick) are comfortably grown. It is also well known that the non-c-axis oriented YBCO platelets are extremely detrimental to the values of J c such that their effects on J c dwarf essentially all of other microstructural effects which control J c . Hence, the discussion given below is mainly focused on how to avoid the growth of these crystallites

Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

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Shridhar N. Mathad

2016-03-01

Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

Improvement of Sol-Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

Science.gov (United States)

Kaneda, Toshihiko; Kim, Joo-Nam; Tokumitsu, Eisuke; Shimoda, Tatsuya

2010-09-01

A thermal press treatment was introduced in the sol-gel process of PbZrxTi1-xO3 (PZT) thin films for the first time and the crystalline and electrical characteristics of the PZT films were investigated. The thermal press treatment was applied to the amorphous PZT gel film before crystallization annealing. It is found that the crystalline orientation and grain size of the PZT film fabricated with the thermal press treatment are different from those of the film fabricated by the conventional sol-gel process without the thermal press treatment, even though the crystallization conditions are exactly the same. It is demonstrated that the electrical properties, especially leakage current density and breakdown field, are significantly improved for the PZT film fabricated with the thermal press treatment. Furthermore, we also demonstrate that the fatigue property is improved by introducing the thermal press treatment.

Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

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D. N. CHAVAN

2010-12-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching

International Nuclear Information System (INIS)

Huang, C.-K.; Wang, C.-C.; Wu, T.-B.

2007-01-01

Dry etching and its effect on the characteristics of submicron feature-size PbZr 1-x Ti x O 3 (PZT) capacitors with PtO x top electrode were investigated. The photoresist (PR)-masked PtO x films were etched by an Ar/(20%)Cl 2 /O 2 helicon wave plasma. A fence-free pattern with a significantly high etch rate and sidewall slope was obtained by the addition of O 2 into the etching gas mixture, due to the chemical instability of PtO x and the formation of a PtO 2 passivation layer to suppress redeposition of the etch by-products on the etched surface. The patterned PtO x electrode can be further used as a hard mask for etching the PZT film, subsequently, with the gas mixture of Ar, CF 4 and O 2 . A high etching rate of PZT and a good etching selectivity to PtO x can be obtained at 30% O 2 addition into the Ar/(50%)CF 4 plasma. The etched capacitors have a steep, 72 0 , sidewall angle with a clean surface. Moreover, the addition of O 2 into the etching gas can well preserve the properties and the fatigue endurance of PtO x /PZT capacitors

Attempt to produce both thick and thinned flowing superfluid films

International Nuclear Information System (INIS)

Kwoh, D.S.W.; Goodstein, D.L.

1977-01-01

As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

International Nuclear Information System (INIS)

Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

2014-01-01

Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

International Nuclear Information System (INIS)

Mar Lar Win

2011-12-01

Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

Gradient stress induced coexistence of tetragonal and rhombohedral phases in Pb(Zr,Ti)O3 films

International Nuclear Information System (INIS)

Li Liben; Chen Qingdong; Li Xinzhong; Hu Zhixiang; Zhen Zhiqiang

2009-01-01

Thermodynamic theory has been used to explain quantitatively the coexistence of tetragonal and rhombohedral phases in Zr-rich Pb(Zr, Ti)O 3 (PZT) films grown on a compressive substrate. The key is to consider a set of gradient thermal stresses imposed on the films. The 'stress-temperature' phase diagrams were developed for PZT films of several different compositions (Ti/Zr=20/80, 30/70, 40/60, 50/50). The characteristic feature of the phase diagrams for Zr-rich PZT films is the coexistence of tetragonal and rhombohedral phases in the compressive stress region. The volume fractions of the rhombohedral phase were calculated for the Zr-rich PZT films grown on MgO substrate. The result agrees with the experiment.

Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

Science.gov (United States)

Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

2017-12-01

The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

Science.gov (United States)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

Science.gov (United States)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

Science.gov (United States)

Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

2000-09-01

Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

Development of dual PZT transducers for reference-free crack detection in thin plate structures.

Science.gov (United States)

Sohn, Hoon; Kim, Seuno Bum

2010-01-01

A new Lamb-wave-based nondestructive testing (NDT) technique, which does not rely on previously stored baseline data, is developed for crack monitoring in plate structures. Commonly, the presence of damage is identified by comparing "current data" measured from a potentially damaged stage of a structure with "baseline data" previously obtained at the intact condition of the structure. In practice, structural defects typically take place long after collection of the baseline data, and the baseline data can be also affected by external loading, temperature variations, and changing boundary conditions. To eliminate the dependence on the baseline data comparison, the authors previously developed a reference-free NDT technique using 2 pairs of collocated lead zirconate titanate (PZT) transducers placed on both sides of a plate. This reference-free technique is further advanced in the present study by the necessity of attaching transducers only on a single surface of a structure for certain applications such as aircraft. To achieve this goal, a new design of PZT transducers called dual PZT transducers is proposed. Crack formation creates Lamb wave mode conversion due to a sudden thickness change of the structure. This crack appearance is instantly detected from the measured Lamb wave signals using the dual PZT transducers. This study also suggests a reference-free statistical approach that enables damage classification using only the currently measured data set. Numerical simulations and experiments were conducted using an aluminum plate with uniform thickness and fundamental Lamb waves modes to demonstrate the applicability of the proposed technique to reference-free crack detection.

Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr,TiO3 (PZT thin films

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M. Mtebwa

2014-12-01

Full Text Available We report the qualitative study of the influence of both elastic compliances and higher order terms of Landau free energy potential on the phase diagram of Pb(Zr0.5Ti0.5O3 thin films by using a single domain Landau theory. Although the impact of elastic compliances and higher order terms of the Landau free energy potential on the phase diagram of ferroelectric thin films are known, the sensitivity of the phase diagram of PZT thin film on these parameters have not been reported. It is demonstrated that, while values of elastic compliances affect the positions of the phase boundaries including phase transition temperature of the cubic phase; higher order terms can potentially introduce an a1a2-phase previously predicted in PbTiO3 phase diagram.

Fatigue-free PZT-based nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Hwang, H J; Sando, M [Nat. Ind. Res. Inst., Nagoya (Japan); Tajima, K [Synergy Ceramics Lab., Fine Ceramics Research Association, Nagoya (Japan); Niihara, K [ISIR, Osaka Univ., Mihogaoka, Ibaraki (Japan)

1999-03-01

The goal of this study is to fabricate fatigue-free piezoelectrics-based nanocomposites. Lead zirconate titanate (PZT) and metallic platinum (Pt) were selected as a matrix and secondary phase dispersoid. Fine Pt particles were homogeneously dispersed in the PZT matrix. Fatigue properties of the unpoled PZT-based nanocomposite under electrical cyclic loading were investigated. The electrical-field-induced crack growth was monitored by an optical microscope, and it depended on the number of cycles the sample was subjected to. Resistance to fatigue was significantly enhanced in the nanocomposite. The excellent fatigue behavior of the PZT/Pt nanocomposites may result from the grain boundary strenghtening due to the interaction between the matrix and Pt particles. (orig.) 8 refs.

Thick film heater for sensor application

International Nuclear Information System (INIS)

Milewski, J; Borecki, M; Kalenik, J; Król, K

2014-01-01

A thick film microheater was elaborated. The microheater is intended for fast heating of small volume samples under measurement in optical based system. Thermal analysis of microheater was carried out using finite element method (FEM) for heat transfer calculation as a function of time and space. A nodal heat transfer function was calculated in classical form including all basics mechanisms of heat exchange – heat conduction, convection and radiation were considered. Work focuses on the influence of some construction parameters (ex. length, thermal conductivity of substrate, substrate thickness) on microheater performance. The results show that application of thin substrate of low thermal conductivity and low thickness for miroheater construction and resistor of optimum dimensions leads to significant power consumption decrease and increase of overall optical measurement system performance.

Ceramics like PZT-PMN

International Nuclear Information System (INIS)

Droescher, R.E.; Sousa, V.C.; Bergman, C.P.

2009-01-01

The goal of this work was to achieve piezoelectric ceramics referring to the system PZT-PMN Pb(Mg 1 / 3 Nb 2 / 3 Zr 0 , 52 Ti 0 , 48 )O 3 . Have been analysed ceramics like 0,65PZT-0,35PMN ((Pb(Mg 0 , 1167 Nb 0 , 2300 Zr 0 , 3380 Ti 0 , 3120 )O 3 ), 0,75PZT-0,25PMN ((Pb(Mg 0 , 083 Nb 0 . 1675 Zr 0 , 3900 Ti 0 , 3600 )O3) and the 0,85PZT-0,15PMN ((Pb(Mg 0,0500 Nb 0 , 1000 Zr 0 , 4420 Ti 0 , 4080 )O 3 ). The influence of the calcination and concentration of PZT on the lattice phases, microstructure and density was evaluated. Then, the method used was the mixed-oxide method, the samples were taken under different temperatures of calcination before the final sinterizing. The DRX and SEM techniques were used to identify the phases formed and analyse the microstructure, respectively. The main result revealed that, the better way is to realize three burns before the final sinterizing at 1200 o C/4 h . Like that, on obtain for sure the average lattice phases, like: perovskite, pyrochlore and PbO and also tend to densify the samples. (author)

Screen printed nanosized ZnO thick film

Indian Academy of Sciences (India)

Unknown

The ex- tracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. ... racterized and a thick film paste is prepared by adding suitable .... UV peak and a broad green emission which is usually.

Multifunctional thick-film structures based on spinel ceramics for environment sensors

International Nuclear Information System (INIS)

Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O; Brunner, M

2011-01-01

Temperature sensitive thick films based on spinel-type NiMn 2 O 4 -CuMn 2 O 4 -MnCo 2 O 4 manganites with p- and p + -types of electrical conductivity and their multilayer p + -p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p + -conductive films. Some part of the p + -p structures were of high stability, the relative electrical drift being no more than 1 %.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

Science.gov (United States)

Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

2017-10-21

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

Science.gov (United States)