Pulsed laser deposition of hydroxyapatite thin films

Czech Academy of Sciences Publication Activity Database

Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

2007-01-01

Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

The spatial thickness distribution of metal films produced by large area pulsed laser deposition

DEFF Research Database (Denmark)

Pryds, Nini; Schou, Jørgen; Linderoth, Søren

2007-01-01

Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

International Nuclear Information System (INIS)

Ullrich, B; Erlacher, A; Smith, H E; Mitchel, W C; Brown, G J

2008-01-01

By means of nanosecond laser pulses at 355, 532, and 1064 nm, p(Zn)-type GaAs was ablated and deposited on n-type Si. The samples showed rectification and Hall measurements established that the deposited material was p-type, but the active-doping concentration was six orders of magnitude below the target value. Because secondary-ion mass spectroscopy results indicated stoichiometric material transfer, we concluded that most of the Zn atoms do not act as acceptors because of the amorphous film texture. The work further showed indications that pulsed-laser deposition at 355 nm causes enhanced Si diffusion into the deposited film, compared to the ablations done at 532 and 1064 nm

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Science.gov (United States)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Pulsed laser deposition and characterization of cellulase thin films

Science.gov (United States)

Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

2013-08-01

Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

Pulsed laser deposition to synthesize the bridge structure of artificial nacre: Comparison of nano- and femtosecond lasers

Science.gov (United States)

Melaibari, Ammar A.; Molian, Pal

2012-11-01

Nature offers inspiration to new adaptive technologies that allow us to build amazing shapes and structures such as nacre using synthetic materials. Consequently, we have designed a pulsed laser ablation manufacturing process involving thin film deposition and micro-machining to create hard/soft layered "brick-bridge-mortar" nacre of AlMgB14 (hard phase) with Ti (soft phase). In this paper, we report pulsed laser deposition (PLD) to mimic brick and bridge structures of natural nacre in AlMgB14. Particulate formation inherent in PLD is exploited to develop the bridge structure. Mechanical behavior analysis of the AlMgB14/Ti system revealed that the brick is to be 250 nm thick, 9 μm lateral dimensions while the bridge (particle) is to have a diameter of 500 nm for a performance equivalent to natural nacre. Both nanosecond (ns) and femtosecond (fs) pulsed lasers were employed for PLD in an iterative approach that involves varying pulse energy, pulse repetition rate, and target-to-substrate distance to achieve the desired brick and bridge characteristics. Scanning electron microscopy, x-ray photoelectron spectroscopy, and optical profilometer were used to evaluate the film thickness, particle size and density, stoichiometry, and surface roughness of thin films. Results indicated that both ns-pulsed and fs-pulsed lasers produce the desired nacre features. However, each laser may be chosen for different reasons: fs-pulsed laser is preferred for much shorter deposition time, better stoichiometry, uniform-sized particles, and uniform film thickness, while ns-pulsed laser is favored for industrial acceptance, reliability, ease of handling, and low cost.

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

International Nuclear Information System (INIS)

Toftmann, B.; Papantonakis, M.R.; Auyeung, R.C.Y.; Kim, W.; O'Malley, S.M.; Bubb, D.M.; Horwitz, J.S.; Schou, J.; Johansen, P.M.; Haglund, R.F.

2004-01-01

A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence

UV and RIR matrix assisted pulsed laser deposition of organic MEH-PPV films

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Papantonalis, M.R.; Auyeung, R.C.Y.

2004-01-01

-PLD). For the first time resonant infrared matrix assisted pulsed laser evaporation (RIR-MAPLE) was successfully demonstrated on a luminescent polymer system. In addition to this, an excimer laser has been used for UV-MAPLE depositions at 193 and 248-nm irradiation. Films deposited onto NaCl and quartz substrates......A comparative study of thin film production based on gentle laser-ablation techniques has been carried out with the luminescent polymer poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene]. Using a free-electron laser films were made by resonant infrared pulsed laser deposition (RIR...... were analyzed by Fourier transform infrared spectroscopy, UV-visible absorbance and photoluminescence. Photoluminescent material was deposited by RIR-MAPLE and 248-nm MAPLE, while the RIR-PLD and 193-nm-MAPLE depositions displayed the smoothest surfaces but did not show photoluminescence. (C) 2003...

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Directory of Open Access Journals (Sweden)

Chia-Man Chou

2017-07-01

Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

International Nuclear Information System (INIS)

Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

1990-01-01

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

RHEED study of titanium dioxide with pulsed laser deposition

DEFF Research Database (Denmark)

Rasmussen, Inge Lise; Pryds, Nini; Schou, Jørgen

2009-01-01

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the growth of thin films of titanium dioxide (TiO2) on (1 0 0) magnesium oxide (MgO) substrates by pulsed laser deposition (PLD). The deposition is performed with a synthetic rutile TiO2 target...

Pulsed-laser deposited ZnO for device applications

NARCIS (Netherlands)

King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Pulsed 1064 nm Nd-YAG Laser Deposition of Titanium on Silicon in a Nitrogen Environment

Directory of Open Access Journals (Sweden)

Wilson Garcia

1999-12-01

Full Text Available Pulsed laser deposition (PLD technique was demonstrated for the deposition of titanium nitride (TiN thin films on Si (100 substrates. A 1064 nm pulsed Nd-YAG laser is focused on a titanium (99.5% target in a nitrogen environment to generate the atomic flux needed for the film deposition. Spectroscopic analysis of the plasma emission indicates the presence of atomic titanium and nitrogen, which are the precursors of TiN. Images of the films grown at different laser pulse energies show an increase in the number and size of deposited droplets and clusters with increasing laser pulse energy. A decrease in cluster and droplet size is also observed, with an increase in substrate temperature. EDS data show an increase in the titanium peak relative to the silicon as the ambient nitrogen pressure is decreased. An increase in deposition time was found to result in large clusters and irregularly shaped structures on the substrate. Post-deposition annealing of the samples enhanced the crystallinity of the film.

BN-based nano-composites obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Major, B.; Kosydar, R.; Major, L; Mroz, W.; Burdynska, S.; Jelinek, M.; Kot, M.; Kustosz, R.

2006-01-01

Boron nitride thin layers were produced by means of the pulsed laser deposition technique from hexagonal boron nitride target. Two types of laser i.e. Nd: YAG with Q-switch as well as KrF coupled with RF generator were used. Influence of deposition parameters on surface morphology, phase composition as well as mechanical properties is discussed. Results obtained using Fourier Transformed Infrared Spectroscopy, Transmission and Scanning Electron Microscopy, Atomic Force Microscopy are presented. Micromechanical properties measured during micro indentation, scratch and wear tests are also shown. (authors)

Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

2011-01-01

When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

2013-01-01

UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

Numerical study on increasing mass flow ratio by energy deposition of high frequency pulsed laser

International Nuclear Information System (INIS)

Wang Diankai; Hong Yanji; Li Qian

2013-01-01

The mass flow ratio (MFR) of air breathing ramjet inlet would be decreased, when the Mach number is lower than the designed value. High frequency pulsed laser energy was deposited upstream of the cowl lip to reflect the stream so as to increase the MFR. When the Mach number of the flow was 5.0, and the static pressure and temperature of the flow were 2 551.6 Pa and 116.7 K, respectively, two-dimensional non-stationary compressible RANS equations were solved with upwind format to study the mechanisms of increasing MFR by high frequency pulsed laser energy deposition. The laser deposition frequency was 100 kHz and the average power was 500 W. The crossing point of the first forebody oblique shock and extension line of cowl lip was selected as the expected point. Then the deposition position was optimized by searching near the expected point. The results indicate that with the optimization of laser energy deposition position, the MFR would be increased from 63% to 97%. The potential value of increasing MFR by high frequency pulsed laser energy deposition was proved. The method for selection of the energy deposition position was also presented. (authors)

Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

Science.gov (United States)

Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

2010-03-01

Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

NARCIS (Netherlands)

Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

2002-01-01

Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

Picosecond and subpicosecond pulsed laser deposition of Pb thin films

Directory of Open Access Journals (Sweden)

F. Gontad

2013-09-01

Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

Direct Patterning of Oxides by Pulsed Laser Stencil Deposition

NARCIS (Netherlands)

te Riele, P.M.

2008-01-01

This thesis describes a detailed study of the application of stencil technology in the patterning of epitaxial oxide thin films by pulsed laser deposition (PLD). Stencil patterning has been applied in thin film sub-micron patterning of metals successfully for decades since it has several advantages

Particulate generation during pulsed laser deposition of superconductor thin films

International Nuclear Information System (INIS)

Singh, R.K.

1993-01-01

The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

Pulsed laser deposition of AlMgB₁₄ thin films

Energy Technology Data Exchange (ETDEWEB)

Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

2008-11-18

Hard, wear-resistant coatings of thin film borides based on AlMgB₁₄ have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB₁₄ used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB₁₄ has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB₁₄ films. Processing methods to eliminate large particles on the surface of the AlMgB₁₄ films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

Bioactive glass and hydroxyapatite thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gyorgy, E. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Grigorescu, S. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Socol, G. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Janackovic, D. [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Dindune, A. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Kanepe, Z. [Institute of Inorganic Chemistry of the Riga Technical University (Latvia); Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Palcevskis, E. [Plasma and Ceramic Technologies Ltd. (PCT Ltd.) (Latvia); Zdrentu, E.L. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania); Petrescu, S.M. [Institute of Biochemistry, Splaiul Independentei 296, Bucharest (Romania)

2007-07-31

Bioactive glass (BG), calcium hydroxyapatite (HA), and ZrO{sub 2} doped HA thin films were grown by pulsed laser deposition on Ti substrates. An UV KrF{sup *} ({lambda} = 248 nm, {tau} {>=} 7 ns) excimer laser was used for the multi-pulse irradiation of the targets. The substrates were kept at room temperature or heated during the film deposition at values within the (400-550 deg. C) range. The depositions were performed in oxygen and water vapor atmospheres, at pressure values in the range (5-40 Pa). The HA coatings were heat post-treated for 6 h in a flux of hot water vapors at the same temperature as applied during deposition. The surface morphology, chemical composition, and crystalline quality of the obtained thin films were studied by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The films were seeded for in vitro tests with Hek293 (human embryonic kidney) cells that revealed a good adherence on the deposited layers. Biocompatibility tests showed that cell growth was better on HA than on BG thin films.

New results in pulsed laser deposition of poly-methyl-methacrylate thin films

International Nuclear Information System (INIS)

Cristescu, R.; Socol, G.; Mihailescu, I.N.; Popescu, M.; Sava, F.; Ion, E.; Morosanu, C.O.; Stamatin, I.

2003-01-01

Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

Energy Technology Data Exchange (ETDEWEB)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A [Joint Department of Biomedical Engineering, North Carolina State University, Raleigh, NC 27695 (United States); Ovsianikov, A; Chichkov, B N [Laser Zentrum Hannover, Hollerithallee 8, 30419 Hannover (Germany); Stafslien, S; Chisholm, B, E-mail: roger_narayan@msn.co [Center for Nanoscale Science and Engineering, North Dakota State University, 1805 Research Park Drive, Fargo, ND 58102 (United States)

2009-12-15

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

Pulsed laser deposition of antimicrobial silver coating on Ormocer (registered) microneedles

International Nuclear Information System (INIS)

Gittard, S D; Narayan, R J; Jin, C; Monteiro-Riviere, N A; Ovsianikov, A; Chichkov, B N; Stafslien, S; Chisholm, B

2009-01-01

One promising option for transdermal delivery of protein- and nucleic acid-based pharmacologic agents involves the use of microneedles. However, microneedle-generated pores may allow microorganisms to penetrate the stratum corneum layer of the epidermis and cause local or systemic infection. In this study, microneedles with antimicrobial functionality were fabricated using two-photon polymerization-micromolding and pulsed laser deposition. The antibacterial activity of the silver-coated organically modified ceramic (Ormocer (registered) ) microneedles was demonstrated using an agar diffusion assay. Human epidermal keratinocyte viability on the Ormocer (registered) surfaces coated with silver was similar to that on uncoated Ormocer (registered) surfaces. This study indicates that coating microneedles with silver thin films using pulsed laser deposition is a useful and novel approach for creating microneedles with antimicrobial functionality. (communication)

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geohegan, D.B.

1994-09-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume.

Time-resolved diagnostics of excimer laser-generated ablation plasmas used for pulsed laser deposition

International Nuclear Information System (INIS)

Geohegan, D.B.

1994-01-01

Characteristics of laser plasmas used for pulsed laser deposition (PLD) of thin films are examined with four in situ diagnostic techniques: Optical emission spectroscopy, optical absorption spectroscopy, ion probe studies, and gated ICCD (intensified charge-coupled-device array) fast photography. These four techniques are complementary and permit simultaneous views of the transport of ions, excited states, ground state neutrals and ions, and hot particulates following KrF laser ablation of YBCO, BN, graphite and Si in vacuum and background gases. The implementation and advantages of the four techniques are first described in order to introduce the key features of laser plasmas for pulsed laser deposition. Aspects of the interaction of the ablation plume with background gases (i.e., thermalization, attenuation, shock formation) and the collision of the plasma plume with the substrate heater are then summarized. The techniques of fast ICCD photography and gated photon counting are then applied to investigate the temperature, velocity, and spatial distribution of hot particles generated during KrF ablation of YBCO, BN, Si and graphite. Finally, key features of fast imaging of the laser ablation of graphite into high pressure rare gases are presented in order to elucidate internal reflected shocks within the plume, redeposition of material on a surface, and formation of hot nanoparticles within the plume

Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film

International Nuclear Information System (INIS)

Vikram, S.

1999-01-01

We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation

Influence of pulse width and target density on pulsed laser deposition of thin YBaCuO film.

Energy Technology Data Exchange (ETDEWEB)

Vikram, S.

1999-01-20

We have studied the effects of temporal pulse width and target density on the deposition of thin films of YBaCuO. A 248nm excimer laser and an 825nm Ti-sapphire laser were used to conduct the experiments with pulse widths of 27 ns, 16 ns, and 150 fs, and target densities of 80% and 90%. Scanning electron microscope photomicrographs and profilometer traces show a striking difference between nanosecond and femtosecond laser irradiation. Shortening the pulse width reduced particulate formation, provided stoichiometry, and improved the film properties. Decreasing the target density raised the ablation rate, produced thicker but nonuniform films, and reduced particulate formation.

Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

International Nuclear Information System (INIS)

Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

2016-01-01

Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Modelling of the energy density deposition profiles of ultrashort laser pulses focused in optical media

International Nuclear Information System (INIS)

Vidal, F; Lavertu, P-L; Bigaouette, N; Moore, F; Brunette, I; Giguere, D; Kieffer, J-C; Olivie, G; Ozaki, T

2007-01-01

The propagation of ultrashort laser pulses in dense optical media is investigated theoretically by solving numerically the nonlinear Schroedinger equation. It is shown that the maximum energy density deposition as a function of the pulse energy presents a well-defined threshold that increases with the pulse duration. As a consequence of plasma defocusing, the maximum energy density deposition is generally smaller and the size of the energy deposition zone is generally larger for shorter pulses. Nevertheless, significant values of the energy density deposition can be obtained near threshold, i.e., at lower energy than for longer pulses

Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

NARCIS (Netherlands)

King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

International Nuclear Information System (INIS)

Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

2002-01-01

We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

Science.gov (United States)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

2015-07-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ~21% and 3-4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications.

Crystallization kinetics of GeTe phase-change thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Sun, Xinxing; Thelander, Erik; Gerlach, Jürgen W; Decker, Ulrich; Rauschenbach, Bernd

2015-01-01

Pulsed laser deposition was employed to the growth of GeTe thin films on Silicon substrates. X-ray diffraction measurements reveal that the critical crystallization temperature lies between 220 and 240 °C. Differential scanning calorimetry was used to investigate the crystallization kinetics of the as-deposited films, determining the activation energy to be 3.14 eV. Optical reflectivity and in situ resistance measurements exhibited a high reflectivity contrast of ∼21% and 3–4 orders of magnitude drop in resistivity of the films upon crystallization. The results show that pulsed laser deposited GeTe films can be a promising candidate for phase-change applications. (paper)

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Palla-Papavlu, A., E-mail: apalla@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Rusen, L.; Dinca, V.; Filipescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania); Lippert, T. [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-077125 Bucharest (Romania)

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm{sup 2} the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Characterization of ethylcellulose and hydroxypropyl methylcellulose thin films deposited by matrix-assisted pulsed laser evaporation

Science.gov (United States)

Palla-Papavlu, A.; Rusen, L.; Dinca, V.; Filipescu, M.; Lippert, T.; Dinescu, M.

2014-05-01

In this study is reported the deposition of hydroxypropyl methylcellulose (HPMC) and ethylcellulose (EC) by matrix-assisted pulsed laser evaporation (MAPLE). Both HPMC and EC were deposited on silicon substrates using a Nd:YAG laser (266 nm, 5 ns laser pulse and 10 Hz repetition rate) and then characterized by atomic force microscopy and Fourier transform infrared spectroscopy. It was found that for laser fluences up to 450 mJ/cm2 the structure of the deposited HPMC and EC polymer in the thin film resembles to the bulk. Morphological investigations reveal island features on the surface of the EC thin films, and pores onto the HPMC polymer films. The obtained results indicate that MAPLE may be an alternative technique for the fabrication of new systems with desired drug release profile.

Pure and Sn-doped ZnO films produced by pulsed laser deposition

DEFF Research Database (Denmark)

Holmelund, E.; Schou, Jørgen; Tougaard, S.

2002-01-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

Energy Technology Data Exchange (ETDEWEB)

Akkan, C.K.; May, A. [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany); Hammadeh, M. [Department for Obstetrics, Gynecology and Reproductive Medicine, IVF Laboratory, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Abdul-Khaliq, H. [Clinic for Pediatric Cardiology, Saarland University Medical Center and Faculty of Medicine, Building 9, 66421 Homburg, Saar (Germany); Aktas, O.C., E-mail: cenk.aktas@inm-gmbh.de [INM – Leibniz Institute for New Materials, CVD/Biosurfaces Group, Campus D2 2, 66123 Saarbrücken (Germany)

2014-05-01

Pulsed laser deposition (PLD) is one of the well-established physical vapor deposition methods used for synthesis of ultra-thin layers. Especially PLD is suitable for the preparation of thin films of complex alloys and ceramics where the conservation of the stoichiometry is critical. Beside several advantages of PLD, inhomogeneity in thickness limits use of PLD in some applications. There are several approaches such as rotation of the substrate or scanning of the laser beam over the target to achieve homogenous layers. On the other hand movement and transition create further complexity in process parameters. Here we present a new approach which we call Matrix Shaped PLD to control the thickness and homogeneity of deposited layers precisely. This new approach is based on shaping of the incoming laser beam by a microlens array and a Fourier lens. The beam is split into much smaller multi-beam array over the target and this leads to a homogenous plasma formation. The uniform intensity distribution over the target yields a very uniform deposit on the substrate. This approach is used to deposit carbide and oxide thin films for biomedical applications. As a case study coating of a stent which has a complex geometry is presented briefly.

Photoluminescence of Eu-doped LiYF4 thin films grown by pulsed laser deposition and matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Stokker-Cheregi, F; Matei, A; Dinescu, M; Secu, C E; Secu, M

2014-01-01

Matrix-assisted pulsed laser evaporation (MAPLE) has been investigated as an alternative to the pulsed laser deposition (PLD) technique for Eu 3+ -doped crystalline LiYF 4 thin-films deposition. MAPLE assumes laser ablation of a frozen target made of the material of interest diluted in a solvent, rather than that of a bulk target, of either pressed powder or single crystal, used in the case of PLD. Our approach stems from the assumption that laser ablation of a frozen dilute target would result in thin films with improved morphology, as compared to PLD. Indeed, we find that roughness values of samples obtained by the MAPLE technique are four times lower than in the case of PLD. A lower transmittance was noticed for PLD obtained layers with respect to those grown by MAPLE due to strong scattering of light by the morphological defects. Photoluminescence spectra are showing characteristic Eu 3+ -ion luminescence bands at 578, 591, 612, 650 and 698 nm ( 5 D 0  →  7 F J ); crystal field splitting of the bands indicates dopant ions incorporation in the host material during transfer by either PLD or MAPLE. (paper)

Growth modes of pentacene films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

2011-01-01

Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

Plume-induced stress in pulsed-laser deposited CeO2 films

International Nuclear Information System (INIS)

Norton, D.P.; Park, C.; Budai, J.D.; Pennycook, S.J.; Prouteau, C.

1999-01-01

Residual compressive stress due to plume-induced energetic particle bombardment in CeO 2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. copyright 1999 American Institute of Physics

Design and spectroscopic reflectometry characterization of pulsed laser deposition combinatorial libraries

International Nuclear Information System (INIS)

Schenck, Peter K.; Bassim, Nabil D.; Otani, Makoto; Oguchi, Hiroyuki; Green, Martin L.

2007-01-01

The goal of the design of pulsed laser deposition (PLD) combinatorial library films is to optimize the compositional coverage of the films while maintaining a uniform thickness. The deposition pattern of excimer laser PLD films can be modeled with a bimodal cos n distribution. Deposited films were characterized using a spectroscopic reflectometer (250-1000 nm) to map the thickness of both single composition calibration films and combinatorial library films. These distribution functions were used to simulate the composition and thickness of multiple target combinatorial library films. The simulations were correlated with electron-probe microanalysis wavelength-dispersive spectroscopy (EPMA-WDS) composition maps. The composition and thickness of the library films can be fine-tuned by adjusting the laser spot size, fluence, background gas pressure, target geometry and other processing parameters which affect the deposition pattern. Results from compositionally graded combinatorial library films of the ternary system Al 2 O 3 -HfO 2 -Y 2 O 3 are discussed

Optical Emission Spectroscopy of Plasma in Hybrid Pulsed Laser Deposition System

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Jelínek, Miroslav; Bulíř, Jiří; Lančok, Ján; Jastrabík, Lubomír; Zelinger, Zdeněk

2002-01-01

Roč. 52, Suppl. D (2002), s. 292-298 ISSN 0011-4626 R&D Projects: GA AV ČR IAA1010110 Keywords : optical emission spectroscopy * pulsed laser deposition * RF discharge Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.311, year: 2002

Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

International Nuclear Information System (INIS)

Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

2004-01-01

Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

History and current status of commercial pulsed laser deposition equipment

International Nuclear Information System (INIS)

Greer, James A

2014-01-01

This paper will review the history of the scale-up of the pulsed laser deposition (PLD) process from small areas ∼1 cm 2 up to 10 m 2 starting in about 1987. It also documents the history of commercialization of PLD as various companies become involved in selling fully integrated laser deposition tools starting in 1989. The paper will highlight the current state of the art of commercial PLD equipment for R and D that is available on the market today from mainstream vendors as well as production-oriented applications directed at piezo-electric materials for microelectromechanical systems and high-temperature superconductors for coated-conductor applications. The paper clearly demonstrates that considerable improvements have been made to scaling this unique physical vapour deposition process to useful substrate sizes, and that commercial deposition equipment is readily available from a variety of vendors to address a wide variety of technologically important thin-film applications. (paper)

Pulsed laser deposition of high Tc superconducting thin films

International Nuclear Information System (INIS)

Singh, R.K.; Narayan, J.

1990-01-01

This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus

2016-04-09

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

KAUST Repository

Avila-Avendano, Jesus; Mejia, Israel; Alshareef, Husam N.; Guo, Zaibing; Young, Chadwin; Quevedo-Lopez, Manuel

2016-01-01

In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.

Morphology and structural studies of WO{sub 3} films deposited on SrTiO{sub 3} by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Kalhori, Hossein, E-mail: h.kalhori@ph.iut.ac.ir [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of); Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Ranjbar, Mehdi; Salamati, Hadi [Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of)

2016-12-30

Highlights: • Highly oriented WO{sub 3} stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO{sub 3} films at 700 °C from monoclinic to tetragonal. - Abstract: WO{sub 3} films have been grown by pulsed laser deposition on SrTiO{sub 3} (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

Surface-enhanced Raman spectroscopy (SERS) using Ag nanoparticle films produced by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Smyth, C.A., E-mail: smythc2@tcd.ie [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Mirza, I.; Lunney, J.G.; McCabe, E.M. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

2013-01-01

Highlights: Black-Right-Pointing-Pointer Pulsed laser deposition (PLD) produces silver nanoparticle films. Black-Right-Pointing-Pointer These films can be used for surface-enhanced Raman spectroscopy (SERS). Black-Right-Pointing-Pointer Commercial film shows good SERS reproducibility but poor signal intensity. Black-Right-Pointing-Pointer PLD shows a good SERS response coupled with good reproducibility. - Abstract: Thin silver nanoparticle films, of thickness 7 nm, were deposited onto glass microslides using pulsed laser deposition (PLD). The films were then characterised using UV-vis spectroscopy and scanning transmission electron microscopy before Rhodamine 6G was deposited onto them for investigation using surface-enhanced Raman spectroscopy (SERS). The sensitivity obtained using SERS was compared to that obtained using a colloidal silver suspension and also to a commercial SERS substrate. The reproducibility of the films is also examined using statistical analysis.

Pulsed laser deposition and characterisation of thin superconducting films

Energy Technology Data Exchange (ETDEWEB)

Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

1996-09-01

Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

International Nuclear Information System (INIS)

Lorusso, A.; Anni, M.; Caricato, A.P.; Gontad, F.; Perulli, A.; Taurino, A.; Perrone, A.; Chiadroni, E.

2016-01-01

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Deposition of Y thin films by nanosecond UV pulsed laser ablation for photocathode application

Energy Technology Data Exchange (ETDEWEB)

Lorusso, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Anni, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Caricato, A.P. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Perulli, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Taurino, A. [National Research Council, Institute for Microelectronics & Microsystems, 73100 Lecce (Italy); Perrone, A. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Istituto Nazionale di Fisica Nucleare-Lecce, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

2016-03-31

In this work, yttrium (Y) thin films have been deposited on Si (100) substrates by the pulsed laser deposition technique. Ex-situ morphological, structural and optical characterisations of such films have been performed by scanning electron microscopy, X-ray diffractometry, atomic force microscopy and ellipsometry. Polycrystalline films with a thickness of 1.2 μm, homogenous with a root mean square roughness of about 2 nm, were obtained by optimised laser irradiation conditions. Despite the relatively high thickness, the films resulted very adherent to the substrates. The high quality of such thin films is important to the synthesis of metallic photocathodes based on Y thin film, which could be used as electron sources of high photoemission performance in radio-frequency guns. - Highlights: • Pulsed laser deposition of Yttrium thin films is investigated. • 1.2 μm thick films were deposited with very low RMS roughness. • The Y thin films were very adherent to the Si substrate • Optical characterisation showed a very high absorption coefficient for the films.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

2016-01-01

The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

International Nuclear Information System (INIS)

Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

2013-01-01

Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

Pulsed Laser Deposition of Polymers Doped with Fluorescent Probes. Application to Environmental Sensors

International Nuclear Information System (INIS)

Rebollar, E; Villavieja, Mm; Gaspard, S; Oujja, M; Corrales, T; Georgiou, S; Domingo, C; Bosch, P; Castillejo, M

2007-01-01

Pulsed laser deposition (PLD) has been used to obtain thin films of poly(methyl methacrylate) and polystyrene doped with fluorescent probes, amino aromatic compounds S5 and S6, that could be used to sense the presence of contaminating environmental agents. These dopants both in solution and inserted in polymeric films are sensitive to changes in pH, viscosity and polarity, increasing their fluorescence emission and/or modifying the position of their emission band. Films deposits on quartz substrates, obtained by irradiating targets with a Ti:Sapphire laser (800 nm, 120 fs pulse) were analyzed by optical and Environmental Scanning Electron Microscopy, Fluorescence Microscopy, Laser-Induced Fluorescence, Micro Raman Spectroscopy and Flow Injection Analysis-Mass Spectrometry. The transfer of the polymer and the probe to the substrate is observed to be strongly dependent on the optical absorption coefficient of the polymeric component of the target at the irradiation wavelength

Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Woldering, L.A.; Abelmann, Leon; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

2011-01-01

We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Review of progress in pulsed laser deposition and using Nd:YAG laser in processing of high Tc superconductors

International Nuclear Information System (INIS)

Chen, C.W.; Mukherjee, K.

1993-01-01

The current progress in pulsed laser ablation of high-temperature superconductors is reviewed with emphasis on the effect of pulse-width and wavelength, nature of the plasma plume, post-annealing and methods to improve quality of films grown at low temperature. An ion beam assisted millisecond pulsed laser vapor deposition process has been developed to fabricate YBa 2 Cu 3 O x high T. superconductor thin films. Solution to target overheating problem, effects of oxygen ion beam, properties of deposited films, and effect of silver buffer layer on YSZ substrate are presented. A new laser calcining process has been used to produce near single phase high T c superconductors of Bi-Pb-Sr-Ca-Cu-0 system. The total processing time was reduced to about 100 hours which is about half of that for conventional sintering. For this compound both resistance and magnetic susceptibility data showed an onset of superconducting transition at about 110K. A sharp susceptibility drop was observed above 106K. The zero resistance temperature was about 98K. High T c phase was formed via a different kinetic path in laser calcined sample compare with the conventionally processed sample

Silver-doped layers of implants prepared by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Čejka, Z.; Kopeček, Jaromír

2013-01-01

Roč. 1, č. 7 (2013), s. 59-61 ISSN 2327-5219 R&D Projects: GA AV ČR KAN300100801 Institutional support: RVO:68378271 Keywords : thin layer * silver * titanium alloy * steel * pulsed laser deposition * adhesion * implant Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.scirp.org/journal/PaperInformation.aspx?paperID=40308#.UvECAfu5dHA

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

Science.gov (United States)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Deposition of zinc oxide thin films by reactive pulsed laser ablation

Czech Academy of Sciences Publication Activity Database

Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

2006-01-01

Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

Amorphous Terfenol-D films using nanosecond pulsed laser deposition

International Nuclear Information System (INIS)

Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

2009-01-01

Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, D., E-mail: doina.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania); Lambers, E. [Major Analytical Instrumentation Center, College of Engineering, University of Florida, Gainesville, FL 32611 (United States); McCumiskey, E.J.; Taylor, C.R. [Mechanical and Aerospace Engineering, University of Florida, Gainesville, FL 32611 (United States); Martin, C. [Ramapo College of New Jersey (United States); Argibay, N. [Materials Science and Engineering Center, Sandia National Laboratories, Albuquerque, NM 87123 (United States); Tanner, D.B. [Physics Department, University of Florida, Gainesville, FL 32611 (United States); Craciun, V. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Magurele (Romania)

2015-10-15

Highlights: • Nanocrystalline ZrC thin film were grown on Si by pulsed laser deposition technique. • Structural properties weakly depend on the CH{sub 4} pressure used during deposition. • The optimum deposition pressure for low resistivity is around 2 × 10{sup −5} mbar CH{sub 4}. • ZrC films exhibited friction coefficients around 0.4 and low wear rates. - Abstract: Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH{sub 4} pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH{sub 4} pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. Tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

Structural characterization of AlN films synthesized by pulsed laser deposition

International Nuclear Information System (INIS)

Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

2011-01-01

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

Science.gov (United States)

Rau, Kaustubh R.

Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

Organic/hybrid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

Science.gov (United States)

Stiff-Roberts, Adrienne D.; Ge, Wangyao

2017-12-01

Some of the most exciting materials research in the 21st century attempts to resolve the challenge of simulating, synthesizing, and characterizing new materials with unique properties designed from first principles. Achievements in such development for organic and organic-inorganic hybrid materials make them important options for electronic and/or photonic devices because they can impart multi-functionality, flexibility, transparency, and sustainability to emerging systems, such as wearable electronics. Functional organic materials include small molecules, oligomers, and polymers, while hybrid materials include inorganic nanomaterials (such as zero-dimensional quantum dots, one-dimensional carbon nanotubes, or two-dimensional nanosheets) combined with organic matrices. A critically important step to implementing new electronic and photonic devices using such materials is the processing of thin films. While solution-based processing is the most common laboratory technique for organic and hybrid materials, vacuum-based deposition has been critical to the commercialization of organic light emitting diodes based on small molecules, for example. Therefore, it is desirable to explore vacuum-based deposition of organic and hybrid materials that include larger macromolecules, such as polymers. This review article motivates the need for physical vapor deposition of polymeric and hybrid thin films using matrix-assisted pulsed laser evaporation (MAPLE), which is a type of pulsed laser deposition. This review describes the development of variations in the MAPLE technique, discusses the current understanding of laser-target interactions and growth mechanisms for different MAPLE variations, surveys demonstrations of MAPLE-deposited organic and hybrid materials for electronic and photonic devices, and provides a future outlook for the technique.

Resonant infrared pulsed laser deposition of a polyimide precursor

Energy Technology Data Exchange (ETDEWEB)

Dygert, N L; Schriver, K E; Jr, R F Haglund [Department of Physics and Astronomy and W M Keck Foundation Free-Electron Laser Centre, Vanderbilt University, Nashville TN 37235 (United States)

2007-04-15

Poly(amic acid) (PAA), a precursor to polyimide, was successfully deposited on substrates without reaching curing temperature, by resonant infrared pulsed laser ablation. The PAA was prepared by dissolving pyromellitic dianhydride and 4, 4' oxidianiline in the polar solvent Nmethyl pyrrolidinone (NMP). The PAA was deposited in droplet-like morphologies when ablation occurred in air, and in string-like moieties in the case of ablation in vacuum. In the as-deposited condition, the PAA was easily removed by washing with NMP; however, once cured thermally for thirty minutes, the PAA hardened, indicating the expected thermosetting property. Plume shadowgraphy showed very clear contrasts in the ablation mechanism between ablation of the solvent alone and the ablation of the PAA, even at low concentrations. A Wavelength dependence in plume velocity was also observed.

Pulsed laser deposition of SrRuO3 thin-films: The role of the pulse repetition rate

Directory of Open Access Journals (Sweden)

H. Schraknepper

2016-12-01

Full Text Available SrRuO3 thin-films were deposited with different pulse repetition rates, fdep, epitaxially on vicinal SrTiO3 substrates by means of pulsed laser deposition. The measurement of several physical properties (e.g., composition by means of X-ray photoelectron spectroscopy, the out-of-plane lattice parameter, the electric conductivity, and the Curie temperature consistently reveals that an increase in laser repetition rate results in an increase in ruthenium deficiency in the films. By the same token, it is shown that when using low repetition rates, approaching a nearly stoichiometric cation ratio in SrRuO3 becomes feasible. Based on these results, we propose a mechanism to explain the widely observed Ru deficiency of SrRuO3 thin-films. Our findings demand these theoretical considerations to be based on kinetic rather than widely employed thermodynamic arguments.

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

Effect of laser beam parameters on magnetic properties of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Fukunaga, H.; Nakano, M.; Yanai, T.; Kamikawatoko, T.; Yamashita, F.

2011-01-01

The effects of varying the laser power and the spot diameter of a laser beam on the magnetic properties, morphology, and deposition rate of Nd-Fe-B thick-film magnets fabricated by pulsed laser deposition (PLD) were investigated. Reducing the laser fluence on the target reduces the remanence and increases the Nd content and consequently the coercivity of the prepared films. The spot size of the laser beam was found to affect the film surface morphology, the deposition rate, and the reproducibility of the magnetic properties of the prepared films. Reducing the spot size reduces the number of droplets and the reproducibility of the magnetic properties and increases the droplet size. Controlling the spot size of the laser beam enabled us to maximize the deposition rate. Consequently, a coercivity of 1210 kA/m and a remanence of 0.51 T were obtained at a deposition rate of 11.8 μm/(h·W). This deposition rate is 30% greater than the highest previously reported deposition rate by PLD.

UV pulsed laser deposition of magnetite thin films

International Nuclear Information System (INIS)

Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

2005-01-01

Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

Pulsed laser deposition of II-VI and III-V semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

1998-12-01

Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

Production of porous PTFE-Ag composite thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Kecskeméti, Gabriella; Hopp, Béla; Smausz, Tomi; Tóth, Zsolt; Szabó, Gábor

2012-01-01

The suitability of pulsed laser deposition technique for preparation of polytetrafluoroethylene (PTFE) and silver (Ag) composite thin films was demonstrated. Disk-shaped targets combined from silver and Teflon with various percentages were ablated with pulses of an ArF excimer laser. The chemical composition of the deposited layers was estimated based on deposition rates determined for the pure PTFE and Ag films. EDX and SEM analyses using secondary electron and backscattered electron images proved that the morphology of the layers is determined by the PTFE which is the main constituent and it is transferred mostly in form of grains and clusters forming a sponge-like structure with high specific surface. The Ag content is distributed over the surface of the PTFE structure. Contact angle measurements showed that with increasing the amount of Ag in the deposited layers the surface significantly enhanced the wetting properties. Conductivity experiments demonstrated that when the average silver content of the layers was increased from 0.16 to 3.28 wt% the resistance of our PTFE-Ag composite films decreased with about three orders of magnitudes (from ∼10 MΩ to ∼10 kΩ). The properties of these films suggest as being a good candidate for future electrochemical sensor applications.

Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

Science.gov (United States)

MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

2012-02-17

The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

Fabrication of Nb/Pb structures through ultrashort pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Gontad, Francisco; Lorusso, Antonella, E-mail: antonella.lorusso@le.infn.it; Perrone, Alessio [Dipartimento di Matematica e Fisica “E. De Giorgi,” Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Klini, Argyro; Fotakis, Costas [Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), 100 N. Plastira St., GR 70013 Heraklion, Crete (Greece); Broitman, Esteban [Thin Film Physics Division, IFM, Linköping University, 581-83 Linköping (Sweden)

2016-07-15

This work reports the fabrication of Nb/Pb structures with an application as photocathode devices. The use of relatively low energy densities for the ablation of Nb with ultrashort pulses favors the reduction of droplets during the growth of the film. However, the use of laser fluences in this ablation regime results in a consequent reduction in the average deposition rate. On the other hand, despite the low deposition rate, the films present a superior adherence to the substrate and an excellent coverage of the irregular substrate surface, avoiding the appearance of voids or discontinuities on the film surface. Moreover, the low energy densities used for the ablation favor the growth of nanocrystalline films with a similar crystalline structure to the bulk material. Therefore, the use of low ablation energy densities with ultrashort pulses for the deposition of the Nb thin films allows the growth of very adherent and nanocrystalline films with adequate properties for the fabrication of Nb/Pb structures to be included in superconducting radiofrequency cavities.

Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Duta, L.; Oktar, F.N.; Stan, G.E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I.N.

2013-01-01

Highlights: ► HA coatings synthesized by pulsed laser deposition. ► Comparative study of commercial vs. animal origin materials. ► HA coatings of animal origin were rougher and more adherent to substrates. ► Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical–chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

Thin solid films deposited by pulsed laser ablating spray

International Nuclear Information System (INIS)

Song Guangle

2002-01-01

The fabricating technique of thin solid films deposited by pulsed laser ablating spray is a new technique. The background from which it came into being and the process of its evolution were briefly described. According to relative documents, basic principle of the technique was dwelt on. Based on the latest documents, the status quo, including the studying abroad and home, was discussed in detail. The advantages, shortcomings, prospect of its utility, the significance of studying as well as critic problems were summarized. Some proposal was suggested

Defects in zinc oxide grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2016-01-01

ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

Science.gov (United States)

Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

2017-08-01

Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

Growth and annealing effect of SrTiO{sub 3} thin films grown by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Takamura, Koji; Fujiwara, Takumi; Yokota, Akinobu; Nakamura, Motonori; Yoshimoto, Ken' ichi [National Institute of Technology, Asahikawa College, 2-2-1-6 Shunkodai, Asahikawa 071-8142 (Japan)

2017-06-15

SrTiO{sub 3} homoepitaxial films were grown by pulsed laser deposition (PLD) using a fourth harmonic Nd:YAG pulsed laser. The substrate temperature was kept constant at 600, 700, or 800 C. The laser energy was set at 9-25 mJ on the polycrystal SrTiO{sub 3} target. Post-procedure annealing was performed in the air for 24 h. The X-ray diffraction measurement results showed that the lattice constant of the film was only 0.010 Aa larger than that of the substrate and was not dependent on the annealing temperature. We demonstrated the possibility of growing near-stoichiometric SrTiO{sub 3} film by PLD using an Nd:YAG laser. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Pulsed laser deposition of the lysozyme protein: an unexpected “Inverse MAPLE” process

DEFF Research Database (Denmark)

Schou, Jørgen; Matei, Andreea; Constantinescu, Catalin

2012-01-01

Films of organic materials are commonly deposited by laser assisted methods, such as MAPLE (matrix-assisted pulsed laser evaporation), where a few percent of the film material in the target is protected by a light-absorbing volatile matrix. Another possibility is to irradiate the dry organic...... the ejection and deposition of lysozyme. This can be called an “inverse MAPLE” process, since the ratio of “matrix” to film material in the target is 10:90, which is inverse of the typical MAPLE process where the film material is dissolved in the matrix down to several wt.%. Lysozyme is a well-known protein...

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Siraj, K., E-mail: khurram.uet@gmail.com [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z. [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S.; Riaz, S. [Center for Solid State Physics, University of Punjab, Lahore (Pakistan)

2011-05-15

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

International Nuclear Information System (INIS)

Siraj, K.; Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z.; Naseem, S.; Riaz, S.

2011-01-01

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

International Nuclear Information System (INIS)

Ogale, S.B.

1992-01-01

This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

The influences of target properties and deposition times on pulsed laser deposited hydroxyapatite films

International Nuclear Information System (INIS)

Bao Quanhe; Chen Chuanzhong; Wang Diangang; Liu Junming

2008-01-01

Hydroxyapatite films were produced by pulsed laser deposition from three kinds of hydroxyapatite targets and with different deposition times. A JXA-8800R electron probe microanalyzer (EPMA) with a Link ISIS300 energy spectrum analyzer was used to give the secondary electron image (SE) and determine the element composition of the films. The phases of thin film were analyzed by a D/max-γc X-ray diffractometer (XRD). The Fourier-transform infrared spectroscopy (FT-IR) was used to characterize the hydroxyl, phosphate and other functional groups. The results show that deposited films were amorphous which mainly composed of droplet-like particles and vibration of PO 4 3- groups. With the target sintering temperature deposition times increasing, the density of droplets is decreased. While with deposition times increasing, the density of droplets is increased. With the target sintering temperature and deposition time increasing, the ratio of Ca/P is increasing and higher than that of theoretical value of HA

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao; Shen Ji

2011-01-01

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Study on boron-film thermal neutron converter prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Song Zifeng; Ye Shuzhen; Chen Ziyu; Song Liao [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China); Shen Ji, E-mail: shenji@ustc.edu.c [Department of Modern Physics, University of Science and Technology of China, Anhui Hefei 230026 (China)

2011-02-15

The boron film converter used in the position-sensitive thermal neutron detector is discussed and the method of preparing this converter layer via Pulsed Laser Deposition (PLD) is introduced. The morphology and the composition were studied by Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). Both boron and boride existed on the layer surface. It was shown that the energy intensity of laser beam and the substrate temperature both had an important influence on the surface morphology of the film.

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

2003-10-15

SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

NARCIS (Netherlands)

Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

The properties of Ge quantum rings deposited by pulsed laser deposition.

Science.gov (United States)

Ma, Xiying

2010-07-01

SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

DEFF Research Database (Denmark)

Bodea, M. A.; Sbarcea, G.; Naik, G. V.

2013-01-01

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

Pulsed Laser deposition of Al2O3 thin film on silicon

International Nuclear Information System (INIS)

Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

1998-01-01

Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

SERS activity of silver and gold nanostructured thin films deposited by pulsed laser ablation

Science.gov (United States)

Agarwal, N. R.; Tommasini, M.; Fazio, E.; Neri, F.; Ponterio, R. C.; Trusso, S.; Ossi, P. M.

2014-10-01

Nanostructured Au and Ag thin films were obtained by nanosecond pulsed laser ablation in presence of a controlled Ar atmosphere. Keeping constant other deposition parameters such as target-to-substrate distance, incidence angle, laser wavelength and laser fluence, the film morphology, revealed by SEM, ranges from isolated NPs to island structures and sensibly depends on gas pressure (10-100 Pa) and on the laser pulse number (500-3 × 10). The control of these two parameters allows tailoring the morphology and correspondingly the optical properties of the films. The position and width of the surface plasmon resonance peak, in fact, can be varied with continuity. The films showed remarkable surface-enhanced Raman activity (SERS) that depends on the adopted deposition conditions. Raman maps were acquired on micrometer-sized areas of both silver and gold substrates selected among those with the strongest SERS activity. Organic dyes of interest in cultural heritage studies (alizarin, purpurin) have been also considered for bench marking the substrates produced in this work. Also the ability to detect the presence of biomolecules was tested using lysozyme in a label free configuration.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Science.gov (United States)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-12-01

In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La0.4Ca0.6MnO3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10-1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

Directory of Open Access Journals (Sweden)

Yaodong Yang

2010-01-01

Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

OpenAIRE

Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

2013-01-01

ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

Structural and optical properties of pulse laser deposited Ag2O thin films

Science.gov (United States)

Agasti, Souvik; Dewasi, Avijit; Mitra, Anirban

2018-05-01

We deposited Ag2O films in PLD system on glass substrate for a fixed partial oxygen gas pressure (70 mili Torr) and, with a variation of laser energy from 75 to 215 mJ/Pulse. The XRD patterns confirm that the films have well crystallinity and deposited as hexagonal lattice. The FESEM images show that the particle size of the films increased from 34.84 nm to 65.83 nm. The composition of the films is analyzed from EDX spectra which show that the percentage of oxygen increased by the increment of laser energy. From the optical characterization, it is observed that the optical band gap appears in the visible optical range in an increasing order from 0.87 to 0.98 eV with the increment of laser energy.

Study of temperature dependence and angular distribution of poly(9,9-dioctylfluorene) polymer films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

International Nuclear Information System (INIS)

Caricato, A.P.; Anni, M.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Tunno, T.; Valerini, D.

2009-01-01

Poly(9,9-dioctylfluorene) (PFO) polymer films were deposited by matrix-assisted pulsed laser evaporation (MAPLE) technique. The polymer was diluted (0.5 wt%) in tetrahydrofuran and, once cooled to liquid nitrogen temperature, it was irradiated with a KrF excimer laser. 10,000 laser pulses were used to deposit PFO films on Si substrates at different temperatures (-16, 30, 50 and 70 deg. C). One PFO film was deposited with 16,000 laser pulses at a substrate temperature of 50 deg. C. The morphology, optical and structural properties of the films were investigated by SEM, AFM, PL and FTIR spectroscopy. SEM inspection showed different characteristic features on the film surface, like deflated balloons, droplets and entangled polymer filaments. The roughness of the films was, at least partially, controlled by substrate heating, which however had the effect to reduce the deposition rate. The increase of the laser pulse number modified the target composition and increased the surface roughness. The angular distribution of the material ejected from the target confirmed the forward ejection of the target material. PFO films presented negligible modification of the chemical structure respect to the bulk material.

Aluminosilicate glass thin films elaborated by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

2017-03-01

Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

DEFF Research Database (Denmark)

Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

2010-01-01

This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Science.gov (United States)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

The minimum amount of "matrix " needed for matrix-assisted pulsed laser deposition of biomolecules

DEFF Research Database (Denmark)

Tabetah, Marshall; Matei, Andreea; Constantinescu, Catalin

2014-01-01

The ability of matrix-assisted pulsed laser evaporation (MAPLE) technique to transfer and deposit high-quality thin organic, bioorganic, and composite films with minimum chemical modification of the target material has been utilized in numerous applications. One of the outstanding problems in MAPLE...

Femtosecond pulsed laser ablation of GaAs

International Nuclear Information System (INIS)

Trelenberg, T.W.; Dinh, L.N.; Saw, C.K.; Stuart, B.C.; Balooch, M.

2004-01-01

The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed

Study of titania nanorod films deposited by matrix-assisted pulsed laser evaporation as a function of laser fluence

Science.gov (United States)

Caricato, A. P.; Belviso, M. R.; Catalano, M.; Cesaria, M.; Cozzoli, P. D.; Luches, A.; Manera, M. G.; Martino, M.; Rella, R.; Taurino, A.

2011-11-01

Chemically synthesized brookite titanium dioxide (TiO2) nanorods with average diameter and length dimensions of 3-4 nm and 35-50 nm, respectively, were deposited by the matrix-assisted pulsed laser evaporation technique. A toluene nanorod solution was frozen at the liquid-nitrogen temperature and irradiated with a KrF excimer laser ( λ=248 nm, τ=20 ns) at the repetition rate of 10 Hz, at different fluences (25 to 350 mJ/cm2). The deposited films were structurally characterized by high-resolution scanning and transmission electron microscopy. single-crystal Si wafers and carbon-coated Cu grids were used as substrates. Structural analyses evidenced the occurrence of brookite-phase crystalline nanospheres coexisting with individually distinguishable TiO2 nanorods in the films deposited at fluences varying from 50 to 350 mJ/cm2. Nanostructured TiO2 films comprising only nanorods were deposited by lowering the laser fluence to 25 mJ/cm2. The observed shape and phase transitions of the nanorods are discussed taking into account the laser-induced heating effects, reduced melting temperature and size-dependent thermodynamic stability of nanoscale TiO2.

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

International Nuclear Information System (INIS)

Shin, Byungha; Aziz, Michael J.

2007-01-01

We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

International Nuclear Information System (INIS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-01-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La 0.4 Ca 0.6 MnO 3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10 −1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

International Nuclear Information System (INIS)

Thareja, Raj K.

2002-01-01

An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

International Nuclear Information System (INIS)

Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

2009-01-01

Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

Pulsed laser deposition of ITO thin films and their characteristics

International Nuclear Information System (INIS)

Zuev, D. A.; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

2012-01-01

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 −4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

2014-01-01

UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

Impact of laser power density on tribological properties of Pulsed Laser Deposited DLC films

Science.gov (United States)

Gayathri, S.; Kumar, N.; Krishnan, R.; AmirthaPandian, S.; Ravindran, T. R.; Dash, S.; Tyagi, A. K.; Sridharan, M.

2013-12-01

Fabrication of wear resistant and low friction carbon films on the engineered substrates is considered as a challenging task for expanding the applications of diamond-like carbon (DLC) films. In this paper, pulsed laser deposition (PLD) technique is used to deposit DLC films on two different types of technologically important class of substrates such as silicon and AISI 304 stainless steel. Laser power density is one of the important parameter used to tailor the fraction of sp2 bonded amorphous carbon (a-C) and tetrahedral amorphous carbon (ta-C) made by sp3 domain in the DLC film. The I(D)/I(G) ratio decreases with the increasing laser power density which is associated with decrease in fraction of a-C/ta-C ratio. The fraction of these chemical components is quantitatively analyzed by EELS which is well supported to the data obtained from the Raman spectroscopy. Tribological properties of the DLC are associated with chemical structure of the film. However, the super low value of friction coefficient 0.003 is obtained when the film is predominantly constituted by a-C and sp2 fraction which is embedded within the clusters of ta-C. Such a particular film with super low friction coefficient is measured while it was deposited on steel at low laser power density of 2 GW/cm2. The super low friction mechanism is explained by low sliding resistance of a-C/sp2 and ta-C clusters. Combination of excellent physical and mechanical properties of wear resistance and super low friction coefficient of DLC films is desirable for engineering applications. Moreover, the high friction coefficient of DLC films deposited at 9GW/cm2 is related to widening of the intergrain distance caused by transformation from sp2 to sp3 hybridized structure.

ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

Energy Technology Data Exchange (ETDEWEB)

Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

2017-03-31

Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

International Nuclear Information System (INIS)

Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

2011-01-01

Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

International Nuclear Information System (INIS)

Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

2006-01-01

We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

KAUST Repository

Flemban, Tahani H.

2017-01-01

is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd

Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2016-11-30

Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C......10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry....

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

International Nuclear Information System (INIS)

Sakawa, Youichi; Watanabe, Daisuke; Shibahara, Takahiro; Sugiyama, Kazuyoshi; Tanabe, Tetsuo

2007-01-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H 2 and C 2 H 2 , with minor contribution of other hydrocarbons, while production of H 2 O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons

Pulsed-laser ablation of co-deposits on JT-60 graphite tile

Energy Technology Data Exchange (ETDEWEB)

Sakawa, Youichi [Institute of Laser Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871 (Japan)]. E-mail: sakawa-y@ile.osaka-u.ac.jp; Watanabe, Daisuke [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Shibahara, Takahiro [Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Sugiyama, Kazuyoshi [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan); Tanabe, Tetsuo [Interdisciplinary School of Engineering Science, Kyushu University, Fukuoka, Fukuoka 812-8581 (Japan)

2007-08-01

Pulsed laser ablation of the co-deposits on a JT-60 open-divertor tile using the fourth harmonic of a 20 ps-Nd: YAG laser has been investigated. With increasing the laser intensity, three regions, non-ablation region (NAR), weak-ablation region (WAR), and strong-ablation region (SAR) were distinguished. Transition from NAR to WAR and WAR to SAR occurred at the threshold laser intensity for laser ablation and that for strong ionization of carbon atoms, respectively. The ablation accompanied desorption of H{sub 2} and C{sub 2}H{sub 2}, with minor contribution of other hydrocarbons, while production of H{sub 2}O was small. In NAR and WAR the number of the hydrogen desorbed by the laser irradiation was less than that of hydrogen retained in the ablated volume, while in SAR it was much larger, owing to thermal desorption of hydrogen gas from the region surrounding the ablated volume. For the ablative removal of hydrogen isotopes, SAR is more desirable because of higher removal efficiency and less production of hydrocarbons.

Experimental Study of Direct Laser Deposition of Ti-6Al-4V and Inconel 718 by Using Pulsed Parameters

Directory of Open Access Journals (Sweden)

Kamran Shah

2014-01-01

Full Text Available Laser direct metal deposition (LDMD has developed from a prototyping to a single metal manufacturing tool. Its potential for creating multimaterial and functionally graded structures is now beginning to be explored. This work is a first part of a study in which a single layer of Inconel 718 is deposited on Ti-6Al-4V substrate. Single layer tracks were built at a range of powder mass flow rates using a coaxial nozzle and 1.5 kW diode laser operating in both continuous and pulsed beam modes. This part of the study focused on the experimental findings during the deposition of Inconel 718 powder on Ti-6Al-4V substrate. Scanning electron microscopy (SEM and X-ray diffraction analysis were performed for characterization and phase identification. Residual stress measurement had been carried out to ascertain the effects of laser pulse parameters on the crack development during the deposition process.

Growth of centimeter-scale atomically thin MoS2 films by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Gene Siegel

2015-05-01

Full Text Available We are reporting the growth of single layer and few-layer MoS2 films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns was used to ablate a polycrystalline MoS2 target. The material thus ablated was deposited on a single crystal sapphire (0001 substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM, Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL measurements. The ablation of the MoS2 target by 50 laser pulses (energy density: 1.5 J/cm2 was found to result in the formation of a monolayer of MoS2 as shown by AFM results. In the Raman spectrum, A1g and E12g peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV and 615 nm (2.02 eV, with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS2 exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS2 films were prepared. It was found that as the number of monolayers (n in the MoS2 films increases, the spacing between the A1g and E12g Raman peaks (Δf increases following an empirical relation, Δ f = 26 . 45 − 15 . 42 1 + 1 . 44 n 0 . 9 cm − 1 .

Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Andrej Vincze

2005-01-01

Full Text Available New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS, atomic force microscopy (AFM and scanning electron microscopy (SEM.

Pulsed-laser-deposited YBCO thin films using modified MTG processed targets

CERN Document Server

Kim, C H; Kim, I T; Hahn, T S

1999-01-01

YBCO thin films were deposited by pulsed laser deposition from targets fabricated using the modified melt-textured growth (MTG) method and the solid-state sintering (SSS) method. All of the films showed c-axis orientations, but the films from the MTG targets had better crystallinity than those from the SSS targets. As the substrate temperature was increased, T sub c and J sub c of the films increased. The films from the MTG targets showed better superconducting properties than those from the SSS targets. From the composition analysis of the targets, the Y-richer vapor species arriving at the substrate from the MTG targets are thought to form a thermodynamically more stable YBCO phase with less cation disorder.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

Energy Technology Data Exchange (ETDEWEB)

Ojeda-G-P, Alejandro [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Schneider, Christof W., E-mail: christof.schneider@psi.ch [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland); Döbeli, Max [Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland); Lippert, Thomas; Wokaun, Alexander [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen-PSI (Switzerland)

2015-12-01

Highlights: • The flip-over effect in PLD is observed up to high deposition pressures. • Consistent congruent transfer of the target composition is generally not correct. • The choice of deposition pressure can change the film composition strongly. • Large compositional changes appear at high off-axis angles and large spot sizes. - Abstract: In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La{sub 0.4}Ca{sub 0.6}MnO{sub 3} target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10{sup −1} mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

International Nuclear Information System (INIS)

Badica, P; Togano, K; Awaji, S; Watanabe, K

2006-01-01

Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

Pulsed laser deposition from ZnS and Cu₂SnS₃ multicomponent targets

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Canulescu, Stela

2015-01-01

Thin films of ZnS and Cu2SnS3have been produced by pulsed laser deposition (PLD), the latter for the firsttime. The effect of fluence and deposition temperature on the structure and the transmission spectrumas well as the deposition rate has been investigated, as has the stoichiometry of the films...

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

International Nuclear Information System (INIS)

Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, J.M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

2008-01-01

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO 2 ) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar + laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 deg. C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures

Field emission study of pulsed laser deposition of gold on clean and oxidized tungsten tip

Czech Academy of Sciences Publication Activity Database

Plšek, Jan

2014-01-01

Roč. 292, FEB 2014 (2014), s. 717-725 ISSN 0169-4332 R&D Projects: GA MŠk LH13022 Institutional support: RVO:61388955 Keywords : nanoparticles * nucleation and growth * pulsed laser deposition Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.711, year: 2014

Topography evolution of germanium thin films synthesized by pulsed laser deposition

Directory of Open Access Journals (Sweden)

P. Schumacher

2017-04-01

Full Text Available Germanium thin films were deposited by Pulsed Laser Deposition (PLD onto single crystal Ge (100 and Si (100 substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

Science.gov (United States)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

Directory of Open Access Journals (Sweden)

Angela De Bonis

2015-01-01

Full Text Available A MgB2 target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glasses

Energy Technology Data Exchange (ETDEWEB)

Epurescu, G. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)], E-mail: george@nipne.ro; Vlad, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Bodea, M.A. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Vasiliu, C. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dumitrescu, O. [University Politehnica of Bucharest, Faculty of Industrial Chemistry, Science and Engineering of Oxide Materials Department, Polizu Str. 1, sect. 1, Bucharest (Romania); Niciu, H. [National Institute of Glass, Department for Laser Glass Technology, 47 Th. Pallady Str., Sect.3, Bucharest (Romania); Elisa, M. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Siraj, K.; Pedarnig, J.D.; Baeuerle, D. [Institut fuer Angewandte Physik, Johannes-Kepler-Universitaet Linz, A-4040 Linz (Austria); Filipescu, M.; Nedelcea, A. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania); Galca, A.C. [National Institute of Materials Physics, Atomistilor 105bis, P.O. Box MG 07, RO- 77125, Magurele (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics INOE 2000, Atomistilor 1, P.O. Box MG 05, 077125 Bucharest-Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG 16, RO- 77125, Bucharest-Magurele (Romania)

2009-03-01

Thin films of complex oxides have been obtained by pulsed-laser deposition (PLD) from glass targets belonging to the system Li{sub 2}O-Al{sub 2}O{sub 3}-P{sub 2}O{sub 5}-(RE){sub 2}O{sub 3}, with RE = Nd, Pr, Er. The films were deposited on quartz, silicon and ITO/glass substrates using a F{sub 2} laser ({lambda} = 157 nm, {iota} {approx} 20 ns) for ablation in vacuum. The structural, morphological and optical properties of the oxide films were investigated through IR and UV-VIS spectroscopy, Atomic Force Microscopy (AFM), Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Spectroscopic Ellipsometry. The laser wavelength was found to be the key parameter to obtain thin films with very smooth surface. In this way new possibilities are opened to grow multilayer structures for photonic applications.

Fabrication of thin film CZTS solar cells with Pulsed Laser Deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo

behind the Quantum Efficiency (QE) curve. What do I learn by reading this thesis? You will learn how to deposit a thin film CZTS absorber layer with Pulsed Laser Deposition with the desired composition. In addition, you will see how material transfer in PLD, which is generally believed...... to be stoichiometric, can be very much non-stoichiometric. How to do it? I suggest to do PLD on a single sintered target (2CuS:ZnS:SnS) .The films are deposited at room temperature and then annealed in a furnace with some sulfur powder aside. The annealing step is as important as the PLD step to the final device...... the non-equilibrium properties of PLD for the production of CZTS films. This may enable one to deposit crystalline CZTS at lower substrate temperature, with no requirement for an annealing step afterwards. Preliminary results do not seem too encouraging. The main obstacle to this approach may...

High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Purice, Andreea; Schou, Jørgen; Kingshott, P.

2007-01-01

Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition

KAUST Repository

El Zein, B.; Boulfrad, Samir; Jabbour, Ghassan E.; Doghè che, Elhadj Hadj

2014-01-01

The successful synthesis of catalyst free zinc oxide (ZnO) Nanowall networks with honeycomb like structure by Pulsed Laser Deposition (PLD) is demonstrated in this paper. The synthesis was conducted directly on Silicon (Si) (1 0 0) and Glass

Pulsed laser deposited KY3F10: Ho3+ thin films: Influence of target to substrate

CSIR Research Space (South Africa)

Debelo, NG

2017-04-01

Full Text Available The influence of target to substrate distance (dts) on the structural, morphological and photoluminescence (PL) properties of commercially obtained KY3F10 : Ho3+ phosphor thin films prepared by pulsed laser deposition is investigated for dts values...

Bonding structure and mechanical properties of B-C-N thin films synthesized by pulsed laser deposition at different laser fluences

International Nuclear Information System (INIS)

Wang, C.B.; Xiao, J.L.; Shen, Q.; Zhang, L.M.

2016-01-01

Boron carbon nitride (B-C-N) thin films have been grown by pulsed laser deposition under different laser fluences changing from 1.0 to 3.0 J/cm"2. The influence of laser fluence on microstructure, bonding structure, and mechanical properties of the films was studied, so as to explore the possibility of improving their mechanical properties by controlling bonding structure. The bonding structure identified by FT-IR and XPS indicated the coexistence of B-N, B-C, N-C and N=C bonds in the films, suggesting the formation of a ternary B-C-N hybridization. There is a clear evolution of bonding structure in the B-C-N films with the increasing of laser fluence. The variation of the mechanical properties as a function of laser fluence was also in accordance with the evolution of B-C and sp"3 N-C bonds whereas contrary to that of sp"2 B-N and N=C bonds. The hardness and modulus reached the maximum value of 33.7 GPa and 256 GPa, respectively, at a laser fluence of 3.0 J/cm"2, where the B-C-N thin films synthesized by pulsed laser deposition possessed the highest intensity of B-C and N-C bonds and the lowest fraction of B-N and N=C bonds. - Highlights: • Improvement of mechanical property by controlling bonding structure is explored. • A clear evolution of bonding structure with the increasing of laser fluence • Variation of property is in accordance with the evolution of B−C and N−C bonds.

Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

Science.gov (United States)

Farkas, B.; Heszler, P.; Budai, J.; Oszkó, A.; Ottosson, M.; Geretovszky, Zs.

2018-03-01

N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding

Directory of Open Access Journals (Sweden)

Ke Wang

2017-02-01

Full Text Available A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC, and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

Cr13Ni5Si2-Based Composite Coating on Copper Deposited Using Pulse Laser Induction Cladding.

Science.gov (United States)

Wang, Ke; Wang, Hailin; Zhu, Guangzhi; Zhu, Xiao

2017-02-10

A Cr13Ni5Si2-based composite coating was successfully deposited on copper by pulse laser induction hybrid cladding (PLIC), and its high-temperature wear behavior was investigated. Temperature evolutions associated with crack behaviors in PLIC were analyzed and compared with pulse laser cladding (PLC) using the finite element method. The microstructure and present phases were analyzed using scanning electron microscopy and X-ray diffraction. Compared with continuous laser induction cladding, the higher peak power offered by PLIC ensures metallurgical bonding between highly reflective copper substrate and coating. Compared with a wear test at room temperature, at 500 °C the wear volume of the Cr13Ni5Si2-based composite coating increased by 21%, and increased by 225% for a NiCr/Cr3C2 coating deposited by plasma spray. This novel technology has good prospects for application with respect to the extended service life of copper mold plates for slab continuous casting.

Hydrating behavior of Mg-based nano-layers prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wioniewski, Z; Bystrzycki, J; Mroz, W; Jastrzabski, C

2009-01-01

The hydriding behavior of Mg with TiO 2 and Si nanolayers prepared by the pulsed laser deposition (PLD) was studied. The phase structure, chemical composition and hydriding properties of the obtained Mg-based nanolayers were investigated by the XRD, TEM, AFM, RS, SIMS and the volumetric Sievert method. It was shown that PLD is an excellent technique for producing the complex structures based on Mg. Both, the kinetic and destabilization topics were investigated in this paper.

Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

2013-11-01

The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

Preparation of calcium-doped boron nitride by pulsed laser deposition

International Nuclear Information System (INIS)

Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

2012-01-01

Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

Energy Technology Data Exchange (ETDEWEB)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

2010-12-15

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Investigation of droplet formation in pulsed Nd:YAG laser deposition of metals and silicon

International Nuclear Information System (INIS)

Siew, Wee-Ong; Lee, Wai-Keat; Wong, Hin-Yong; Tou, Teck-Yong; Yong, Thian-Khok; Yap, Seong-Shan

2010-01-01

In the process of pulsed laser deposition of nickel (Ni) and ruthenium (Ru) thin films, the occurrence of phase explosion in ablation was found to affect the deposition rate and enhance the optical emissions from the plasma plume. Faster thin-film growth rates coincide with the onset of phase explosion as a result of superheating and/or sub-surface boiling which also increased the particulates found on the thin-film surface. These particulates were predominantly droplets which may not be round but flattened and also debris for the case of silicon (Si) ablation. The droplets from Ni and Ru thin films were compared in terms of size distribution and number density for different laser fluences. The origins of these particulates were correlated to the bubble and ripple formations on the targets while the transfer to the thin film surface was attributed to the laser-induced ejection from the targets. (orig.)

Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

2015-05-01

We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

Pulsed Laser Deposition Processing of Improved Titanium Nitride Coatings for Implant Applications

Science.gov (United States)

Haywood, Talisha M.

Recently surface coating technology has attracted considerable attention of researchers to develop novel coatings with enhanced functional properties such as hardness, biocompatibility, wear and corrosion resistance for medical devices and surgical tools. The materials currently being used for surgical implants include predominantly stainless steel (316L), cobalt chromium (Co-Cr), titanium and its alloys. Some of the limitations of these implants include improper mechanical properties, corrosion resistance, cytotoxicity and bonding with bone. One of the ways to improve the performance and biocompatibility of these implants is to coat their surfaces with biocompatible materials. Among the various coating materials, titanium nitride (TiN) shows excellent mechanical properties, corrosion resistance and low cytotoxicity. In the present work, a systematic study of pulsed laser ablation processing of TiN coatings was conducted. TiN thin film coatings were grown on commercially pure titanium (Ti) and stainless steel (316L) substrates at different substrate temperatures and different nitrogen partial pressures using the pulsed laser deposition (PLD) technique. Microstructural, surface, mechanical, chemical, corrosion and biological analysis techniques were applied to characterize the TiN thin film coatings. The PLD processed TiN thin film coatings showed improvements in mechanical strength, corrosion resistance and biocompatibility when compared to the bare substrates. The enhanced performance properties of the TiN thin film coatings were a result of the changing and varying of the deposition parameters.

Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Seong Shan Yap

2015-01-01

Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

Influence of silicon orientation and cantilever undercut on the determination of Young's modulus of pulsed laser deposited PZT

NARCIS (Netherlands)

Nazeer, H.; Woldering, L.A.; Abelmann, Leon; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt

In this work we show for the first time that the effective in-plane Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films, deposited by pulsed laser deposition (PLD) on dedicated single crystal silicon cantilevers, is independent of the in-plane orientation of cantilevers.

Relationship between the Ca/P ratio of hydroxyapatite thin films and the spatial energy distribution of the ablation laser in pulsed laser deposition

NARCIS (Netherlands)

Nishikawa, H.; Hasegawa, T; Miyake, A.; Tashiro, Y.; Hashimoto, Y.; Blank, David H.A.; Rijnders, Augustinus J.H.M.

2016-01-01

Variation of the Ca/P ratio in hydroxyapatite (Ca10(PO4)6(OH)2) thin films was studied in relation to the spot size of the ablation laser for two different spatial energy distributions in pulsed laser deposition. One energy distribution is the defocus method with a raw distribution and the other is

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

International Nuclear Information System (INIS)

Kassem, W.; Tabbal, M.; Roumie, M.

2011-01-01

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

Science.gov (United States)

Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

2015-11-01

Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

2011-01-01

Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

Improvement in the electronic quality of pulsed laser deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via post-deposition elemental sulfur annealing process

Energy Technology Data Exchange (ETDEWEB)

Beres, M., E-mail: matthewcberes@gmail.com [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Yu, K.M., E-mail: kinmanyu@cityu.edu.hk [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Syzdek, J., E-mail: jego.mejl@gmail.com [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Bio-Logic USA, 9050 Executive Park Dr NW, Knoxville, TN 37923 (United States); Mao, S.S., E-mail: ssmao@me.berkeley.edu [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

2016-06-01

We synthesized CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ~ 5 Ω·cm suitable for photovoltaic applications. - Highlights: • CIGSe thin films were deposited by pulsed laser deposition. • Laser deposition parameters and annealing parameters were investigated. • As-deposited films demonstrated high hole concentrations and low Hall mobilities. • Elemental sulfur annealing significantly enhanced the electronic quality of films.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N.; Khan, M. A.; Alshareef, Husam N.

2013-01-01

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent

Deposition of Methylammonium Lead Triiodide by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation

Science.gov (United States)

Barraza, E. Tomas; Dunlap-Shohl, Wiley A.; Mitzi, David B.; Stiff-Roberts, Adrienne D.

2018-02-01

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP) CH3NH3PbI3 (methylammonium lead triiodide, or MAPbI), creating phase-pure films. Given the moisture sensitivity of these crystalline, multi-component organic-inorganic hybrid materials, deposition of MAPbI by RIR-MAPLE required a departure from the use of water-based emulsions as deposition targets. Different chemistries were explored to create targets that properly dissolved MAPbI components, were stable under vacuum conditions, and enabled resonant laser energy absorption. Secondary phases and solvent contamination in the resulting films were studied through Fourier transform infrared (FTIR) absorbance and x-ray diffraction (XRD) measurements, suggesting that lingering excess methylammonium iodide (MAI) and low-vapor pressure solvents can distort the microstructure, creating crystalline and amorphous non-perovskite phases. Thermal annealing of films deposited by RIR-MAPLE allowed for excess solvent to be evaporated from films without degrading the MAPbI structure. Further, it was demonstrated that RIR-MAPLE does not require excess MAI to create stoichiometric films with optoelectronic properties, crystal structure, and film morphology comparable to films created using more established spin-coating methods for processing MHPs. This work marks the first time a MAPLE-related technique was used to deposit MHPs.

Histologic evaluation of laser lipolysis comparing continuous wave vs pulsed lasers in an in vivo pig model.

Science.gov (United States)

Levi, Jessica R; Veerappan, Anna; Chen, Bo; Mirkov, Mirko; Sierra, Ray; Spiegel, Jeffrey H

2011-01-01

To evaluate acute and delayed laser effects of subdermal lipolysis and collagen deposition using an in vivo pig model and to compare histologic findings in fatty tissue after continuous wave diode (CW) vs pulsed laser treatment. Three CW lasers (980, 1370, and 1470 nm) and 3 pulsed lasers (1064, 1320, and 1440 nm) were used to treat 4 Göttingen minipigs. Following administration of Klein tumescent solution, a laser cannula was inserted at the top of a 10 × 2.5-cm rectangle and was passed subdermally to create separate laser "tunnels." Temperatures at the surface and at intervals of 4-mm to 20-mm depths were recorded immediately after exposure and were correlated with skin injury. Full-thickness cutaneous biopsy specimens were obtained at 1 day, 1 week, and 1 month after exposure and were stained with hematoxylin-eosin and trichrome stain. Qualitative and semiquantitative histopathologic evaluations were performed with attention to vascular damage, lipolysis, and collagen deposition. Skin surface damage occurred at temperatures exceeding 46°C. Histologic examination at 1 day after exposure showed hemorrhage, fibrous collagen fiber coagulation, and adipocyte damage. Adipocytes surrounded by histiocytes, a marker of lipolysis, were present at 1 week and 1 month after exposure. Collagen deposition in subdermal fatty tissue and in reticular dermis of some specimens was noted at 1 week and had increased at 1 month. Tissue treated with CW laser at 1470 nm demonstrated greater hemorrhage and more histiocytes at damage sites than tissue treated with pulsed laser at 1440 nm. There was a trend toward more collagen deposition with pulsed lasers than with CW lasers, but this was not statistically significant. Histopathologic comparison between results of CW laser at 980 nm vs pulsed laser at 1064 nm showed the same trend. Hemorrhage differences may result from pulse duration variations. A theoretical calculation estimating temperature rise in vessels supported this

DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

Directory of Open Access Journals (Sweden)

A. P. Burmakov

2012-01-01

Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

Energy Technology Data Exchange (ETDEWEB)

Lorusso, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Solombrino, L. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

2016-11-11

In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y. - Highlights: • Mg and Y thin film photocathodes were successfully prepared by pulsed laser deposition. • Mg quantum efficiency is higher than Y, despite its higher work function. • The three-step model of Spicer justify the difference in quantum efficiency.

Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

2013-01-01

Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

Optical Characterization of SERS Substrates Based on Porous Au Films Prepared by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

V. V. Strelchuk

2015-01-01

Full Text Available The SERS (surface enhanced Raman spectroscopy substrates based on nanocomposite porous films with gold nanoparticles (Au NPs arrays were formed using the method of the pulsed laser deposition from the back low-energy flux of erosion torch particles on the glass substrate fixed at the target plain. The dependencies of porosity, and morphology of the surface of the film regions located near and far from the torch axis on the laser ablation regime, laser pulses energy density, their number, and argon pressure in the vacuum chamber, were ascertained. The Au NPs arrays with the controllable extinction spectra caused by the local surface plasmon resonance were prepared. The possibility of the formation of SERS substrates for the detection of the Rhodamine 6G molecules with the concentration 10−10 Mol/L with the enhancement factor 4·107 was shown.

Smooth silk fibroin nanofilm deposited by 1064-nm pulsed laser beam from an opaque target

International Nuclear Information System (INIS)

Nozaki, R.; Nakayama, S.; Senna, M.

2013-01-01

In an attempt to prepare smooth nanostructured thin films of silk fibroin (SF) by near-infrared (NIR) pulsed laser deposition, an opaque target was prepared from an emulsified aqueous solution of SF. Upon irradiation of 1064-nm pulsed laser beam at its fluence 5 J/cm 2 , a thin film of SF was deposited on the Si(100) substrate with its root-mean-square surface roughness, 0.37 nm, smoother than those obtained from a compressed target of SF powders by approximately an order of magnitude. The attainment of an extra-smooth film from the opaque target was discussed in terms of multiple Mie scattering of the incident NIR beam, leading to an increase in the plasma density, intensified optical breakdown, ablation of better dispersed SF molecular units, and a film with more intensive intermolecular cross-linking. - Highlights: • Thin film of silk fibroin with its RMS surface roughness, R rms , 0.37 nm was obtained. • The use of a target from an emulsified solution of SF was the key issue. • Mechanism involved was elucidated in terms of enhanced Mie scattering

Synthesis of nanostructured SiC using the pulsed laser deposition technique

International Nuclear Information System (INIS)

Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

2009-01-01

We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

International Nuclear Information System (INIS)

Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G.I.; Giapintzakis, J.

2013-01-01

One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10 −3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated

Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Pervolaraki, M., E-mail: pervolaraki@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Komninou, Ph.; Kioseoglou, J. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Athanasopoulos, G.I. [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus)

2013-08-01

One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10{sup −3} Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

NARCIS (Netherlands)

Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

1997-01-01

Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

Decoration of silica nanowires with gold nanoparticles through ultra-short pulsed laser deposition

Science.gov (United States)

Gontad, F.; Caricato, A. P.; Cesaria, M.; Resta, V.; Taurino, A.; Colombelli, A.; Leo, C.; Klini, A.; Manousaki, A.; Convertino, A.; Rella, R.; Martino, M.; Perrone, A.

2017-10-01

The ablation of a metal target at laser energy densities in the range of 1-10 TW/cm2 leads to the generation of nanoparticles (NP) of the ablated material. This aspect is of particular interest if the immobilization of NPs on three-dimensional (3D) substrates is necessary as for example in sensing applications. In this work the deposition of Au NP by irradiation of a Au bulk target with a sub-picosecond laser beam (500 fs; 248 nm; 10 Hz) on 2D (silica and Si(100)) and 3D substrates (silica nanowire forests) is reported for different number of laser pulses (500, 1000, 1500, 2000, 2500). A uniform coverage of small Au NPs (with a diameter of few nm) on both kinds of substrates has been obtained using a suitable number of laser pulses. The presence of spherical droplets, with a diameter ranging from tens of nm up to few μm was also detected on the substrate surface and their presence can be explained by the weak electron-phonon coupling of Au. The optical characterization of the samples on 2D and 3D substrates evidenced the surface plasmon resonance peak characteristic of the Au NPs although further improvements of the size-distribution are necessary for future applications in sensing devices.

Laser-induced chemical vapor deposition reactions

International Nuclear Information System (INIS)

Teslenko, V.V.

1990-01-01

The results of investigation of chemical reactions of deposition of different substances from the gas phase when using the energy of pulse quasicontinuous and continuous radiation of lasers in the wave length interval from 0.193 to 10.6 μm are generalized. Main attetion is paid to deposition of inorganic substances including nonmetals (C, Si, Ge and others), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni) and some simple compounds. Experimental data on the effect of laser radiation parameters and reagent nature (hydrides, halogenides, carbonyls, alkyl organometallic compounds and others) on the deposition rate and deposit composition are described in detail. Specific features of laser-chemical reactions of deposition and prospects of their application are considered

Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

CERN Document Server

Li Peng; Mazumder, J

2003-01-01

Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Science.gov (United States)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Growth parameter enhancement for MoS{sub 2} thin films synthesized by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Serna, Martha I.; Higgins, Marissa; Quevedo-Lopez, Manuel A. [Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States); Moreno, Salvador [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Choi, Hyunjoo [Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Minary-Jolandan, Majid [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)

2016-12-15

Two-dimensional materials such as graphene and MoS{sub 2} have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS{sub 2} layered films on amorphous (SiO{sub 2}) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm{sup 2}) promotes crystalline MoS{sub 2} films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS{sub 2} films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Chemical, mechanical, and tribological properties of pulsed-laser-deposited titanium carbide and vanadium carbide

International Nuclear Information System (INIS)

Krzanowski, J.E.; Leuchtner, R.E.

1997-01-01

The chemical, mechanical, and tribological properties of pulsed-laser-deposited TiC and VC films are reported in this paper. Films were deposited by ablating carbide targets using a KrF (λ = 248 nm) laser. Chemical analysis of the films by XPS revealed oxygen was the major impurity; the lowest oxygen concentration obtained in a film was 5 atom%. Oxygen was located primarily on the carbon sublattice of the TiC structure. The films were always substoichiometric, as expected, and the carbon in the films was identified primarily as carbidic carbon. Nanoindentation hardness tests gave values of 39 GPa for TiC and 26 GPa for VC. The friction coefficient for the TiC films was 0.22, while the VC film exhibited rapid material transfer from the steel ball to the substrate resulting in steel-on-steel tribological behavior

Experimental and numerical study of the chemical composition of WSex thin films obtained by pulsed laser deposition in vacuum and in a buffer gas atmosphere

International Nuclear Information System (INIS)

Grigoriev, S.N.; Fominski, V.Yu.; Gnedovets, A.G.; Romanov, R.I.

2012-01-01

WSe x thin films were obtained by pulsed laser deposition in vacuum and at various Ar gas pressures up to 10 Pa. Stoichiometry and chemical state of the WSe x films were studied by means of Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. In the case of pulsed laser deposition of WSe x films in vacuum the value of stoichiometric coefficient x was 1.3. During the deposition in argon at pressures of 2-10 Pa the value of x varied from 1.5 to 2.2. To explain the influence of the buffer gas, a model was used that takes into account the following processes: (1) congruent pulsed laser evaporation of the WSe 2.2 target; (2) scattering of laser-evaporated W and Se atoms in Ar; (3) sputtering of the deposited film by high-energy atoms from the laser plume. Experimentally, the velocity distributions of laser-evaporated W and Se atoms in vacuum were determined by the time-of-flight measurements. Collision Monte Carlo simulations were used to quantify the impact of the buffer gas on the energy and the incidence angle distributions of the deposited W and Se atoms. Model distributions were used to determine the chemical composition of the WSe x films, depending on the efficiency of the preferential sputtering of Se atoms.

Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

International Nuclear Information System (INIS)

Caricato, A.P.; Barucca, G.; Di Cristoforo, A.; Leggieri, G.; Luches, A.; Majni, G.; Martino, M.; Mengucci, P.

2005-01-01

We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N 2 and O 2 ) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-V and I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O 2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O 2 atmosphere, improved considerably the electrical properties of the films

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

2014-01-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

Pulsed laser deposited Pb(Zr,Ti)O3 thin films with excellent piezoelectric and mechanical properties

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

We present for the first time the combined measured piezoelectric and mechanical properties of epitaxial, (110) oriented Pb(ZrxTi1-x) (PZT) thin films grown on microfabricated silicon cantilevers using pulsed laser deposition (PLD, x=0.4, 0.52, 0.6 and 0.8). The grown PZT thin films develop a strong

Tracing the plasma interactions for pulsed reactive crossed-beam laser ablation

Science.gov (United States)

Chen, Jikun; Stender, Dieter; Pichler, Markus; Döbeli, Max; Pergolesi, Daniele; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2015-10-01

Pulsed reactive crossed-beam laser ablation is an effective technique to govern the chemical activity of plasma species and background molecules during pulsed laser deposition. Instead of using a constant background pressure, a gas pulse with a reactive gas, synchronized with the laser beam, is injected into vacuum or a low background pressure near the ablated area of the target. It intercepts the initially generated plasma plume, thereby enhancing the physicochemical interactions between the gaseous environment and the plasma species. For this study, kinetic energy resolved mass-spectrometry and time-resolved plasma imaging were used to study the physicochemical processes occurring during the reactive crossed beam laser ablation of a partially 18O substituted La0.6Sr0.4MnO3 target using oxygen as gas pulse. The characteristics of the ablated plasma are compared with those observed during pulsed laser deposition in different oxygen background pressures.

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Krzanowski, J.E.; Leuchtner, R.E.

1996-01-01

A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

One-pot synthesis and transfer of PMMA/Ag photonic nanocomposites by pulsed laser deposition

Science.gov (United States)

Karoutsos, V.; Koutselas, I.; Orfanou, P.; Mpatzaka, Th.; Vasileiadis, M.; Vassilakopoulou, A.; Vainos, N. A.; Perrone, A.

2015-08-01

Nanocomposite films comprising metallic nanoparticles in polymer matrices find increasing use in emerging photonic, electronic and microsystem applications owing to their tailored advanced functionalities. The versatile development of such films based on poly-methyl-methacrylate (PMMA) matrix having embedded Ag nanoparticles is addressed here. Two low-cost one-pot chemical methods for the synthesis of bulk target nanocomposite materials are demonstrated. These nanocomposites are subsequently transferred via pulsed laser deposition using 193 nm ArF excimer laser radiation, producing films maintaining the structural and functional properties. Both target- and laser-deposited materials have been thoroughly characterized using microscopic, spectroscopic and thermal analysis methods. Infrared spectra demonstrated the close molecular PMMA chain similarity for both target and film materials, though structural alterations identified by thermal analysis proved the enhanced characteristics of films grown. High-resolution electron microscopy proved the transfer of Ag nanoparticles sized 10-50 nm. Visible absorption peaked in the spectral range of 430-440 nm and attributed to the Ag nanocomposite plasmonic response verifying the transfer of the functional performance from target to film.

Transmission of reactive pulsed laser deposited VO{sub 2} films in the THz domain

Energy Technology Data Exchange (ETDEWEB)

Émond, Nicolas; Hendaoui, Ali; Ibrahim, Akram; Al-Naib, Ibraheem; Ozaki, Tsuneyuki; Chaker, Mohamed, E-mail: chaker@emt.inrs.ca

2016-08-30

Highlights: • Synthesis of vanadium dioxide (VO{sub 2}) thin films as a function of oxygen pressure (2–25 mTorr) using Reactive Pulsed Laser Deposition (RPLD). • Characterization of RPLD-grown VO{sub 2} thin films in the THz frequency range. • THz switches and/or sensors require VO{sub 2} films deposited at low oxygen pressure (i.e. low transition temperature, large amplitude contrast of THz transmission, narrow hysteresis width). • THz optical memory applications require VO{sub 2} films deposited at high oxygen pressure (broad hysteresis width). - Abstract: This work reports on the characteristics of the insulator-to-metal transition (IMT) of reactive pulsed laser deposited vanadium dioxide (VO{sub 2}) films in the terahertz (THz) frequency range, namely the transition temperature T{sub IMT}, the amplitude contrast of the THz transmission over the IMT ΔA, the transition sharpness ΔT and the hysteresis width ΔH. XRD analysis shows the sole formation of VO{sub 2} monoclinic structure with an enhancement of (011) preferential orientation when varying the O{sub 2} pressure (P{sub O2}) during the deposition process from 2 to 25 mTorr. THz transmission measurements as a function of temperature reveal that VO{sub 2} films obtained at low P{sub O2} exhibit low T{sub IMT}, large ΔA, and narrow ΔH. Increasing P{sub O2} results in VO{sub 2} films with higher T{sub IMT}, smaller ΔA, broader ΔH and asymmetric hysteresis loop. The good control of the VO{sub 2} IMT features in the THz domain could be further exploited for the development of advanced smart devices, such as ultrafast switches, modulators, memories and sensors.

Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Crovetto, Andrea; Cazzaniga, Andrea; Ettlinger, Rebecca B.; Schou, Jørgen; Hansen, Ole

2015-01-01

Cu 2 ZnSnS 4 films prepared by pulsed laser deposition at different temperatures are characterized by spectroscopic ellipsometry. The focus is on confirming results from direct measurement techniques, by finding appropriate models of the surface overlayer for data fitting, and extracting the dielectric function of the films. It is found that the surface overlayer changes with film thickness and deposition temperature. Adopting different ellipsometry measurements and modeling strategies for each film, dielectric functions are extracted and compared. As the deposition temperature is increased, the dielectric functions exhibit additional critical points related to optical transitions in the material other than absorption across the fundamental band gap. In the case of a thin film < 200 nm thick, surface features observed by scanning electron microscopy and atomic force microscopy are accurately reproduced by ellipsometry data fitting. - Highlights: • Inhomogeneous Cu 2 ZnSnS 4 films are prepared by pulsed laser deposition. • The film surface includes secondary phases and topographic structures. • We model a film surface layer that fits ellipsometry data. • Ellipsometry data fits confirm results from direct measurement techniques. • We obtain the dielectric function of inhomogeneous Cu 2 ZnSnS 4 films

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

International Nuclear Information System (INIS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta

2011-01-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Science.gov (United States)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta, E-mail: antonietta.taurino@le.imm.cnr.it [Institute for Microelectronics and Microsystems, IMM-CNR, Via Monteroni, 73100 Lecce (Italy)

2011-09-14

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

CERN Document Server

Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

2003-01-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

Pulsed Laser Cladding of Ni Based Powder

Science.gov (United States)

Pascu, A.; Stanciu, E. M.; Croitoru, C.; Roata, I. C.; Tierean, M. H.

2017-06-01

The aim of this paper is to optimize the operational parameters and quality of one step Metco Inconel 718 atomized powder laser cladded tracks, deposited on AISI 316 stainless steel substrate by means of a 1064 nm high power pulsed laser, together with a Precitec cladding head manipulated by a CLOOS 7 axes robot. The optimization of parameters and cladding quality has been assessed through Taguchi interaction matrix and graphical output. The study demonstrates that very good cladded layers with low dilution and increased mechanical proprieties could be fabricated using low laser energy density by involving a pulsed laser.

Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alexander Wokaun

2009-09-01

Full Text Available Perovskite-type N-substituted SrTiO3 thin films with a preferential (001 orientation were grown by pulsed laser deposition on (001-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370-460 nm associated with localized N(2p orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

Tracing the plasma interactions for pulsed reactive crossed-beam laser ablation

Energy Technology Data Exchange (ETDEWEB)

Chen, Jikun; Stender, Dieter; Pichler, Markus; Pergolesi, Daniele; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas, E-mail: thomas.lippert@psi.ch [General Energy Research Department, Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Döbeli, Max [Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)

2015-10-28

Pulsed reactive crossed-beam laser ablation is an effective technique to govern the chemical activity of plasma species and background molecules during pulsed laser deposition. Instead of using a constant background pressure, a gas pulse with a reactive gas, synchronized with the laser beam, is injected into vacuum or a low background pressure near the ablated area of the target. It intercepts the initially generated plasma plume, thereby enhancing the physicochemical interactions between the gaseous environment and the plasma species. For this study, kinetic energy resolved mass-spectrometry and time-resolved plasma imaging were used to study the physicochemical processes occurring during the reactive crossed beam laser ablation of a partially {sup 18}O substituted La{sub 0.6}Sr{sub 0.4}MnO{sub 3} target using oxygen as gas pulse. The characteristics of the ablated plasma are compared with those observed during pulsed laser deposition in different oxygen background pressures.

Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

International Nuclear Information System (INIS)

Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

2007-01-01

Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

2011-01-01

Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

Modeling of thermal, electronic, hydrodynamic, and dynamic deposition processes for pulsed-laser deposition of thin films

International Nuclear Information System (INIS)

Liu, C.L.; LeBoeuf, J.N.; Wood, R.F.; Geohegan, D.B.; Donato, J.M.; Chen, K.R.; Puretzky, A.A.

1994-11-01

Various physical processes during laser ablation of solids for pulsed-laser deposition (PLD) are studied using a variety of computational techniques. In the course of the authors combined theoretical and experimental effort, they have been trying to work on as many aspects of PLD processes as possible, but with special focus on the following areas: (a) the effects of collisional interactions between the particles in the plume and in the background on the evolving flow field and on thin film growth, (b) interactions between the energetic particles and the growing thin films and their effects on film quality, (c) rapid phase transformations through the liquid and vapor phases under possibly nonequilibrium thermodynamic conditions induced by laser-solid interactions, (d) breakdown of the vapor into a plasma in the early stages of ablation through both electronic and photoionization processes, (c) hydrodynamic behavior of the vapor/plasma during and after ablation. The computational techniques used include finite difference (FD) methods, particle-in-cell model, and atomistic simulations using molecular dynamics (MD) techniques

Templated synthesis of gold-iron alloy nanoparticles using pulsed laser deposition

International Nuclear Information System (INIS)

Chang, Won-Suk; Park, Jin-Won; Rawat, Vijay; Sands, Timothy; Lee, Gil U

2006-01-01

A means for synthesizing paramagnetic nanoparticles composed of an Au-Fe alloy is described using pulsed laser deposition (PLD) of the alloy into a mesoporous alumina membrane template. Nanoparticles 46 ± 13 nm in diameter and composed of a 17% Fe alloy have been created by depositing a 35% Fe alloy into a template with 65 nm diameter pores. These paramagnetic nanoparticles had a saturation magnetization of 11.5 emu g -1 at 2000 G, and their UV-visible extinction spectrum was dominated by strong absorption similar to that of Fe 3 O 4 nanoparticles. The surfaces of these nanoparticles were readily functionalized with a dense monolayer of DNA oligonucleotides that had a 5' thiol group. The Au-Fe nanoparticles appear to be well suited for biotechnological applications and single molecule measurements as they can be synthesized in a specific size range, are strongly paramagnetic, and may be easily functionalized with biological macromolecules

Apparatus and method for pulsed laser deposition of materials on wires and pipes

Science.gov (United States)

Fernandez, Felix E.

2003-01-01

Methods and apparatuses are disclosed which allow uniform coatings to be applied by pulsed laser deposition (PLD) on inner and outer surfaces of cylindrical objects, such as rods, pipes, tubes, and wires. The use of PLD makes this technique particularly suitable for complex multicomponent materials, such as superconducting ceramics. Rigid objects of any length, i.e., pipes up to a few meters, and with diameters from less than 1 centimeter to over 10 centimeters can be coated using this technique. Further, deposition is effected simultaneously onto an annular region of the pipe wall. This particular arrangement simplifies the apparatus, reduces film uniformity control difficulties, and can result in faster operation cycles. In addition, flexible wires of any length can be continuously coated using the disclosed invention.

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Cao, B Q; Lorenz, M; Rahm, A; Wenckstern, H von; Czekalla, C; Lenzner, J; Benndorf, G; Grundmann, M

2007-01-01

Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A 0 , X, 3.356 eV), free-to-neutral-acceptor emission (e, A 0 , 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires

Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

International Nuclear Information System (INIS)

Caricato, A.P.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Tunno, T.; Valerini, D.

2007-01-01

We report morphological and optical properties of a colloidal TiO 2 nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO 2 nanoparticle thin films

Effects of an external magnetic field in pulsed laser deposition

Science.gov (United States)

García, T.; de Posada, E.; Villagrán, M.; Ll, J. L. Sánchez; Bartolo-Pérez, P.; Peña, J. L.

2008-12-01

Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe 12O 19 target with and without the presence of a nonhomogeneous magnetic field of μ0H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

Effects of an external magnetic field in pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Garcia, T. [Universidad Autonoma de la Ciudad de Mexico (UACM), Prolongacion San Isidro 151, Col. San Lorenzo Tezonco, C.P. 09790, Mexico DF (Mexico)], E-mail: tupacgarcia@yahoo.com; Posada, E. de [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico); Villagran, M. [CCADET, Universidad Nacional Autonoma de Mexico (UNAM), A.P. 70-186, C.P. 04510, Mexico DF (Mexico); Ll, J.L. Sanchez [Laboratorio de Magnetismo, Facultad de Fisica-IMRE, Universidad de La Habana, La Habana 10400 (Cuba); Bartolo-Perez, P.; Pena, J.L. [CINVESTAV-IPN Unidad Merida, Applied Physics Department, A.P. 73, Cordemex, C.P. 97130 Merida, Yuc. (Mexico)

2008-12-30

Thin films were grown by pulsed laser deposition, PLD, on Si (1 0 0) substrates by the ablation of a sintered ceramic SrFe{sub 12}O{sub 19} target with and without the presence of a nonhomogeneous magnetic field of {mu}{sub 0}H = 0.4 T perpendicular to substrate plane and parallel to the plasma expansion axis. The field was produced by a rectangular-shaped Nd-Fe-B permanent magnet and the substrate was just placed on the magnet surface (Aurora method). An appreciable increment of optical emission due to the presence of the magnetic field was observed, but no film composition change or thickness increment was obtained. It suggests that the increment of the optical emission is due mainly to the electron confinement rather than confinement of ionic species.

Functionalized porphyrin conjugate thin films deposited by matrix assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Iordache, S. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Cristescu, R., E-mail: rodica.cristescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Popescu, A.C.; Popescu, C.E.; Dorcioman, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, P.O. Box MG-36, Bucharest-Magurele (Romania); Ciucu, A.A. [University of Bucharest, Faculty of Chemistry, Bucharest (Romania); Balan, A.; Stamatin, I. [University of Bucharest, 3Nano-SAE Research Center, PO Box MG-38, Bucharest-Magurele (Romania); Fagadar-Cosma, E. [Institute of Chemistry Timisoara of Romanian Academy, M. Viteazul Ave. 24, 300223-Timisoara (Romania); Chrisey, D.B. [Tulane University, Departments of Physics and Biomedical Engineering, New Orleans, LA 70118 (United States)

2013-08-01

We report on the deposition of nanostructured porphyrin-base, 5(4-carboxyphenyl)-10,15,20-tris(4-phenoxyphenyl)-porphyrin thin films by matrix assisted pulsed laser evaporation onto silicon substrates with screen-printed electrodes. AFM investigations have shown that at 400 mJ/cm{sup 2} fluence a topographical transition takes place from the platelet-like stacking porphyrin-based nanostructures in a perpendicular arrangement to a quasi-parallel one both relative to the substrate surface. Raman spectroscopy has shown that the chemical structure of the deposited thin films is preserved for fluences within the range of 200–300 mJ/cm{sup 2}. Cyclic voltammograms have demonstrated that the free porphyrin is appropriate as a single mediator for glucose in a specific case of screen-printed electrodes, suggesting potential for designing a new class of biosensors.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

The influence of substrate temperature and deposition pressure on pulsed laser deposited thin films of CaS:Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Nyenge, R.L. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Physics Department, Kenyatta University, P.O. Box 43844-0100, Nairobi (Kenya); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

2016-01-01

The aim of this study was to investigate the influence of substrate temperature and argon deposition pressure on the structure, morphology and photoluminescence emission (PL) properties of pulsed laser deposited thin films of CaS:Eu{sup 2+}. The PL intensity improved significantly upon reaching substrate temperature of 650 °C. The (200) peak gradually became the preferred orientation. The increase in PL intensity as well as surface roughness is attributed to improved crystallinity and higher growth rates, respectively. The best PL intensity as a function of deposition pressure was obtained at an argon pressure of 80 mTorr. The initial increase and eventual drop in PL intensity as deposition pressure increases is ascribed to the changes in growth rates.

Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

NARCIS (Netherlands)

Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

2004-01-01

Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

ITO thin films deposited by advanced pulsed laser deposition

International Nuclear Information System (INIS)

Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

2007-01-01

Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

Compositional dependence of the Young's modulus and piezoelectric coefficient of (110)-oriented pulsed laser deposited PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Sardan Sukas, Ö.; Abelmann, Leon; Elwenspoek, Michael Curt

2014-01-01

In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrₓTi₿₋ₓ)O₃ (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric

Growth and characterization of polycrystalline Ge1-xCx by reactive pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez, M.P.; Farias, M.H.; Castillon, F.F.; Diaz, Jesus A.; Avalos, M.; Ulloa, L.; Gallegos, J.A.; Yee-Madeiros, H.

2011-01-01

Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T s , on C incorporation to substitutional sites (x) in Ge 1-x C x was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 deg. C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T s of 350 deg. C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T s from 250 deg. C to 350 deg. C. At T s = 400 deg. C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T s being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T s plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.

Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

2014-01-01

The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

Optimal properties for coated titanium implants with the hydroxyapatite layer formed by the pulsed laser deposition technique

Science.gov (United States)

Himmlova, Lucia; Dostalova, Tatjana; Jelinek, Miroslav; Bartova, Jirina; Pesakova, V.; Adam, M.

1999-02-01

Pulsed laser deposition technique allow to 'tailor' bioceramic coat for metal implants by the change of deposition conditions. Each attribute is influenced by the several deposition parameters and each parameter change several various properties. Problem caused that many parameters has an opposite function and improvement of one property is followed by deterioration of other attribute. This study monitor influence of each single deposition parameter and evaluate its importance form the point of view of coat properties. For deposition KrF excimer laser in stainless-steel deposition chamber was used. Deposition conditions (ambient composition and pressures, metallic substrate temperature, energy density and target-substrate distance) were changed according to the film properties. A non-coated titanium implant was used as a control. Films with promising mechanical quality underwent an in vitro biological tests -- measurement of proliferation activity, observing cell interactions with macrophages, fibroblasts, testing toxicity of percolates, observing a solubility of hydroxyapatite (HA) coat. Deposition conditions corresponding with the optimal mechanical and biochemical properties are: metal temperature 490 degrees Celsius, ambient-mixture of argon and water vapor, energy density 3 Jcm-2, target-substrate distance 7.5 cm.

Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

NARCIS (Netherlands)

Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

2001-01-01

We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

Reactive pulsed laser deposition of Cu2ZnSnS4 thin films in H2S

International Nuclear Information System (INIS)

Surgina, G.D.; Zenkevich, A.V.; Sipaylo, I.P.; Nevolin, V.N.; Drube, W.; Teterin, P.E.; Minnekaev, M.N.

2013-01-01

Cu 2 ZnSnS 4 (CZTS) thin films have been grown by reactive pulsed laser deposition in H 2 S atmosphere, combining the alternate ablation from the metallic (Cu) and alloyed (Zn x Sn) targets at room temperature. The morphological, structural and optical properties of as grown CZTS thin films with varying compositions as well as upon annealing in N 2 atmosphere are investigated by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and optical spectrophotometry. The chemical bonding in the “bulk” of the CZTS films is elucidated via hard X-ray photoemission spectroscopy measurements. The formation of the good quality stoichiometric polycrystalline CZTS films is demonstrated upon optimization of the growth parameters. - Highlights: ► The new method of Cu 2 ZnSnS 4 (CZTS) thin films growth in H 2 S was realized. ► CZTS films were grown by pulsed laser deposition from Cu and alloyed Zn–Sn targets. ► The effect of the processing parameters on the CZTS properties was investigated. ► The chemical bonding in the “bulk” of CZTS films was studied

Multi - pulse tea CO2 laser beam interaction with the TiN thin films

International Nuclear Information System (INIS)

Gakovic, B.; Trtica, M.; Nenadovic, T.; Pavlicevic, B.

1998-01-01

The interaction of various types of energetic beams including a laser beam with the high-hardness coatings is of great fundamental and technological interest. The Nd:YAG, excimer and CO 2 are frequently used laser beams for this purpose. The interaction of a laser beam with low thickness coatings, deposited on austenitic stainless steel, is insufficiently known in the literature. Titanium nitride (TiN) possess the excellent physico-chemical characteristics. For this reason TiN films/coatings are widely used. The purpose of this article is a consideration of the effect of TEA C0 2 laser radiation on the TiN film deposited on austenitic stainless steel substrate (AISI 316). Investigation of TiN morphological changes, after multipulse laser irradiation, shown dependence on laser fluence, number of laser pulses and the laser pulse shape. Subsequently fast heating and cooling during multi-pulse laser bombardment cause the grain growth of TiN layer. Both laser pulses (pulses with tail and tail-free pulses) produced periodical wave like structure on polished substrate material. Periodicity is observed also on AISI 316 protected with TiN layer, but only with laser pulse with tail. (author)

Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

International Nuclear Information System (INIS)

Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

2007-01-01

Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

Residual stresses in laser direct metal deposited Waspaloy

Energy Technology Data Exchange (ETDEWEB)

Moat, R.J., E-mail: richard.moat@manchester.ac.uk [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom); Pinkerton, A.J.; Li, L. [Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, University of Manchester, M60 1QD (United Kingdom); Withers, P.J.; Preuss, M. [School of Materials, University of Manchester, Grosvenor Street, Manchester M1 7HS (United Kingdom)

2011-03-15

Research highlights: {yields} Neutron diffraction and the contour method show good agreement. {yields} Tensile stresses found parallel to the surfaces. {yields} Compressive stresses within the bulk of the structures. {yields} Residual stress weakly dependent on the laser pulse parameters. {yields} Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Residual stresses in laser direct metal deposited Waspaloy

International Nuclear Information System (INIS)

Moat, R.J.; Pinkerton, A.J.; Li, L.; Withers, P.J.; Preuss, M.

2011-01-01

Research highlights: → Neutron diffraction and the contour method show good agreement. → Tensile stresses found parallel to the surfaces. → Compressive stresses within the bulk of the structures. → Residual stress weakly dependent on the laser pulse parameters. → Maximum tensile residual stress unaffected across range of pulse parameters used. - Abstract: This paper reports a study into the effect of laser pulse length and duty cycle on the residual stress distributions in multi-track laser direct metal deposits of Waspaloy onto an Inconel 718 substrate. The residual stresses have been evaluated using neutron diffraction and the contour method, while electron microscopy and micro hardness indentation have been used to map the concomitant microstructural variation. In all cases, near the tops of the deposited walls, the longitudinal stresses are tensile towards the mid-length of the wall, while the stresses perpendicular to the substrate are negligible. By contrast near the base of the walls, the stresses along the direction of deposition are small, while the stresses perpendicular to the substrate are compressive at the centre and tensile towards the ends. Consistent with previous observations, the stresses parallel to free surfaces are tensile, balanced by compressive stresses in the interior (an inverse quench stress profile). These profiles have been found to be weakly dependent on the laser pulse parameters, most notably an increase in tensile stress gradient with increasing duty cycle, but the maximum residual stresses are largely unaffected. Furthermore, microstructural analysis has shown that the effect of laser pulse parameters on grain morphology in multi-track thick walls is less marked than previously reported for single-track wall structures.

Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

International Nuclear Information System (INIS)

Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

2002-01-01

The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

Science.gov (United States)

Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

2018-03-01

Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

Room temperature pulsed laser deposition of Si{sub x} C thin films in different compositions

Energy Technology Data Exchange (ETDEWEB)

Hanyecz, I.; Budai, J. [University of Szeged, Department of Optics and Quantum Electronics, P.O. Box 406, Szeged (Hungary); Oszko, A. [University of Szeged, Department of Solid State and Radiochemistry, P.O. Box 168, Szeged (Hungary); Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, Budapest (Hungary); Toth, Z. [Research Group on Laser Physics of the Hungarian Academy of Sciences, P.O. Box 406, Szeged (Hungary)

2010-09-15

Amorphous silicon-carbon alloy films in different compositions were prepared by pulsed laser deposition from two-component targets containing pure silicon and carbon parts. The silicon-carbon ratio in the films was varied by adjusting the number of laser shots on the constituent silicon and carbon targets. The composition, optical properties, thickness, and bonding structure of the films were determined by backscattering spectrometry, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, respectively. Backscattering spectrometry data were used to determine the deposition rate of silicon and carbon. This enabled the calculation of the number of the shots onto each target to reach a predefined composition. As the film composition changed from carbon to silicon, it was shown that the microscopic and macroscopic properties of the films also changed from a diamond-like carbon phase to an amorphous silicon phase via graphite- and silicon-carbide-like composite. (orig.)

Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

2009-12-31

The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

2008-01-01

Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

DEFF Research Database (Denmark)

Liu, Haihua; Pryds, Nini; Schou, Jørgen

2010-01-01

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy...... for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes....... (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason...

Characteristics of LaB{sub 6} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Craciun, Valentin; Socol, Gabriel; Craciun, Doina, E-mail: doina.craciun@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, Magurele 077125 (Romania); Cristea, Daniel [Materials Science Department, Transilvania University of Brasov, Brasov 500036 (Romania); Lambers, Eric [Major Analytical Instrumentation Center (MAIC), University of Florida, Gainesville, Florida 32611 (United States); Trusca, Roxana [Faculty of Applied Chemistry and Material Science, Department of Science and Engineering of Oxide Materials and Nanomaterials, University Politehnica of Bucharest, Bucharest 011061, 060042 (Romania); Fairchild, Steven [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 (United States); Back, Tyson; Gruen, Greggory [Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, Ohio 45433-7707 and Energy and Environmental Engineering Division, University of Dayton Research Institute, Dayton, Ohio 45469-0170 (United States)

2016-09-15

LaB{sub 6} thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm{sup 3}, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ∼2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at. % once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩ cm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H ∼ 16 GPa, E ∼ 165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB{sub 6}.

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Science.gov (United States)

Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-07-01

Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

Compositional and structural properties of pulsed laser-deposited ZnS:Cr films

Science.gov (United States)

Nematollahi, Mohammadreza; Yang, Xiaodong; Seim, Eivind; Vullum, Per Erik; Holmestad, Randi; Gibson, Ursula J.; Reenaas, Turid W.

2016-02-01

We present the properties of Cr-doped zinc sulfide (ZnS:Cr) films deposited on Si(100) by pulsed laser deposition. The films are studied for solar cell applications, and to obtain a high absorption, a high Cr content (2.0-5.0 at.%) is used. It is determined by energy-dispersive X-ray spectroscopy that Cr is relatively uniformly distributed, and that local Cr increases correspond to Zn decreases. The results indicate that most Cr atoms substitute Zn sites. Consistently, electron energy loss and X-ray photoelectron spectroscopy showed that the films contain mainly Cr2+ ions. Structural analysis showed that the films are polycrystalline and textured. The films with ~4 % Cr are mainly grown along the hexagonal [001] direction in wurtzite phase. The average lateral grain size decreases with increasing Cr content, and at a given Cr content, increases with increasing growth temperature.

Nanosecond laser ablation and deposition of silver, copper, zinc and tin

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Ettlinger, Rebecca Bolt; Canulescu, Stela

2014-01-01

Nanosecond pulsed laser deposition of different metals (Ag, Cu, Sn, Zn) has been studied in high vacuum at a laser wavelength of 355 nm and pulse length of 6 ns. The deposition rate is roughly similar for Sn, Cu and Ag, which have comparable cohesive energies, and much higher for the deposition...... of Zn which has a low cohesive energy. The deposition rate for all metals is strongly correlated with the total ablation yield, i.e., the total mass ablated per pulse, reported in the literature except for Sn, for which the deposition rate is low, but the total ablation yield is high. This may...... be explained by the continuous erosion by nanoparticles during deposition of the Sn films which appear to have a much rougher surface than those of the other metals studied in the present work....

Synthesis of functionally graded bioactive glass-apatite multistructures on Ti substrates by pulsed laser deposition

International Nuclear Information System (INIS)

Tanaskovic, D.; Jokic, B.; Socol, G.; Popescu, A.; Mihailescu, I.N.; Petrovic, R.; Janackovic, Dj.

2007-01-01

Functionally graded glass-apatite multistructures were synthesized by pulsed laser deposition on Ti substrates. We used sintered targets of hydroxyapatite Ca 10 (PO 4 ) 6 (OH) 2 , or bioglasses in the system SiO 2 -Na 2 O-K 2 O-CaO-MgO-P 2 O 5 with SiO 2 content of either 57 wt.% (6P57) or 61 wt.% (6P61). A UV KrF* (λ = 248 nm, τ > 7 ns) excimer laser source was used for the multipulse laser ablation of the targets. The hydroxyapatite thin films were obtained in H 2 O vapors, while the bioglass layers were deposited in O 2 . Thin films of 6P61 were deposited in direct contact with Ti, because Ti and this glass have similar thermal expansion behaviors, which ensure good bioglass adhesion to the substrate. This glass, however, is not bioactive, so yet more depositions of 6P57 bioglass and/or hydroxyapatite thin films were performed. All structures with hydroxyapatite overcoating were post-treated in a flux of water vapors. The obtained multistructures were characterized by various techniques. X-ray investigations of the coatings found small amounts of crystalline hydroxyapatite in the outer layers. The scanning electron microscopy analyses revealed homogeneous coatings with good adhesion to the Ti substrate. Our studies showed that the multistructures we had obtained were compatible with further use in biomimetic metallic implants with glass-apatite coating applications

Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

Energy Technology Data Exchange (ETDEWEB)

Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

2008-05-01

MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

Dynamics of a multiple-pulse-driven x-ray laser plasma

International Nuclear Information System (INIS)

Wan, A.S.; Da Silva, L.B.; Moreno, J.C.; Cauble, R.; Celliers, P.; Dalhed, H.E. Jr.; Koch, J.A.; Nilsen, J.

1996-01-01

In this paper we describe experimental and computational studies of multiple-pulse-driven laser plasma, which is the gain medium for a neon-like yttrium x-ray laser. Near-field emission profiles have been measured both with and without reinjection of the x-ray laser photons to couple with the amplifying medium created by later pulses using an external multilayer mirror. From the temporal and spatial evolution of the near-field emission profiles we can examine the pulse-to-pulse variation of the x-ray laser plasma due to changes in the hydrodynamics, laser deposition, and the injecting of x-ray laser photons back into an amplifying x-ray laser plasma. Using a combination of radiation hydrodynamics, atomic kinetics, and ray propagation codes, reasonable agreement has been obtained between simulations and the experimental results. copyright 1996 American Institute of Physics

Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Čížek, J.; Kužel, R.; Bulíř, Jiří; Lančok, Ján; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

2012-01-01

Roč. 45, č. 22 (2012), 1-12 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GAP108/11/0958; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : ZnO thin film * pulsed laser deposition * x-ray diffraction positron implantation spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://dx.doi.org/10.1088/0022-3727/45/22/225101

Thermal diffusivity of diamond films using a laser pulse technique

International Nuclear Information System (INIS)

Albin, S.; Winfree, W.P.; Crews, B.S.

1990-01-01

Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

Absorption of femtosecond laser pulses by atomic clusters

International Nuclear Information System (INIS)

Lin Jingquan; Zhang Jie; Li Yingjun; Chen Liming; Lu Tiezheng; Teng Hao

2001-01-01

Energy absorption by Xe, Ar, He atomic clusters are investigated using laser pulses with 5 mJ energy in 150 fs duration. Experimental results show that the size of cluster and laser absorption efficiency are strongly dependent on several factors, such as the working pressure of pulse valve, atomic number Z of the gas. Absorption fraction of Xe clusters is as high as 45% at a laser intensity of 1 x 10 15 W/cm 2 with 20 x 10 5 Pa gas jet backing pressure. Absorption of the atomic clusters is greatly reduced by introducing pre-pulses. Ion energy measurements confirm that the efficient energy deposition results in a plasma with very high ion temperature

Vacuum deposition and pulsed modification of Ge thin films on Si. Structure and photoluminescence

International Nuclear Information System (INIS)

Batalov, R.I.; Bayazitov, R.M.; Novikov, G.A.; Shustov, V.A.; Bizyaev, D.A.; Gajduk, P.I.; Ivlev, G.D.; Prokop'ev, S.L.

2013-01-01

Vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited films by powerful laser or ion beams was performed. The dependence of the structure and optical properties of Ge/Si films on parameters of pulsed treatments was investigated. Optimum parameters of deposition and pulsed treatments resulting into light emitting monocrystalline Ge/Si layers are determined. (authors)

Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surface

Energy Technology Data Exchange (ETDEWEB)

Yoshida, Yutaka, E-mail: yyoshida@cris.hokudai.ac.jp [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, N8, W13, Kita-ku, Sapporo 060-8628, Hokkaido (Japan); Creative Research Institution Sousei, Hokkaido University, N21, W10, Kita-ku, Sapporo 001-0021, Hokkaido (Japan); Oosawa, Kazuya; Wajima, Jyunya; Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, N8, W13, Kita-ku, Sapporo 060-8628, Hokkaido (Japan); Matsuo, Yasutaka [Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Hokkaido (Japan); Kato, Takahiko [Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika, Hitachi-shi 319-1292, Ibaraki-ken (Japan); Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, N8, W13, Kita-ku, Sapporo 060-8628, Hokkaido (Japan)

2014-07-01

We report a technique for formation of two-dimensional (2D) nanodot (ND) patterns on gaillium antimoide (GaSb) using a nanosecond pulsed laser irradiation with 532 nm wavelength. The patterns have formed because of the interference and the self-organization under energy deposition of the laser irradiation, which induced the growth of NDs on the local area. The NDs are grown and shrunken in the pattern by energy depositions. In the laser irradiation with average laser energy density of 35 mJ cm⁻², large and small NDs are formed on GaSb surface. The large NDs have grown average diameter from 160 to 200 nm with increase of laser pulses, and the small NDs have shrunken average diameter from 75 to 30 nm. The critical dot size is required about 107 nm for growth of the NDs in the patterns. Nanosecond pulsed laser irradiation can control the self-organized ND size on GaSb in air as a function of the laser pulses.

Pulsed laser dewetting of nickel catalyst for carbon nanofiber growth

International Nuclear Information System (INIS)

Guan, Y F; Pearce, R C; Simpson, M L; Rack, P D; Melechko, A V; Hensley, D K

2008-01-01

We present a pulsed laser dewetting technique that produces single nickel catalyst particles from lithographically patterned disks for subsequent carbon nanofiber growth through plasma enhanced chemical vapor deposition. Unlike the case for standard heat treated Ni catalyst disks, for which multiple nickel particles and consequently multiple carbon nanofibers (CNFs) are observed, single vertically aligned CNFs could be obtained from the laser dewetted catalyst. Different laser dewetting parameters were tested in this study, such as the laser energy density and the laser processing time measured by the total number of laser pulses. Various nickel disk radii and thicknesses were attempted and the resultant number of carbon nanofibers was found to be a function of the initial disk dimension and the number of laser pulses

Nanostructured high valence silver oxide produced by pulsed laser deposition

International Nuclear Information System (INIS)

Dellasega, D.; Facibeni, A.; Di Fonzo, F.; Russo, V.; Conti, C.; Ducati, C.; Casari, C.S.; Li Bassi, A.; Bottani, C.E.

2009-01-01

Among silver oxides, Ag 4 O 4 , i.e. high valence Ag(I)Ag(III) oxide, is interesting for applications in high energy batteries and for the development of antimicrobial coatings. We here show that ns UV pulsed laser deposition (PLD) in an oxygen containing atmosphere allows the synthesis of pure Ag 4 O 4 nanocrystalline thin films, permitting at the same time to control the morphology of the material at the sub-micrometer scale. Ag 4 O 4 films with a crystalline domain size of the order of tens of nm can be deposited provided the deposition pressure is above a threshold (roughly 4 Pa pure O 2 or 20 Pa synthetic air). The formation of this particular high valence silver oxide is explained in terms of the reactions occurring during the expansion of the ablated species in the reactive atmosphere. In particular, expansion of the PLD plasma plume is accompanied by formation of low stability Ag-O dimers and atomic oxygen, providing reactive species at the substrate where the film grows. Evidence of reactive collisions in the expanding ablation plume is obtained by analysis of the plume visible shape in inert and reactive atmospheres. In addition, we show how the dimensionless deposition parameter L, relating the target-to-substrate distance to the ablation plume maximum expansion length, can be used to classify different growth regimes. It is thus possible to vary the stoichiometry and the morphology of the films, from compact and columnar to foam-like, by controlling both the gas pressure and the target-to-substrate distance

Strain dependent magnetic properties of LSMO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Prajapat, C.L.; Gupta, N.; Singh, M.R.; Mishra, P.K.; Gupta, S.K.; Ravikumar, G.; Bhattacharya, D.; Singh, Surendra; Basu, S.; Roul, B.K.

2014-01-01

Perovskite manganites exhibiting colossal magnetoresistance (CMR) are ideal candidates for growth of epitaxial multilayers with oxide high temperature superconductors owing to their structural similarity and comparable growth conditions. They are widely employed in studies on superconductor/ferromagnet-superlattices. Among the manganites, La 2/3 Sr 1/3 MnO 3 (LSMO) has one of the highest FM transition temperatures (above 300K). Magnetic properties of films that are dependent on strain (such as coercivity) can be tuned by varying deposition conditions, by using different substrates and varying thickness of films in nano range. Lattice mismatch between LSMO with STO and MgO substrates are 0.6% and 8% respectively. This mismatch produces tensile strain in LSMO films and changes its magnetic properties. We study the change in magnetic properties of epitaxial LSMO thin films on MgO (100) and STO (100) substrates with varying thickness to change the strain in the film. LSMO films are prepared by pulsed laser deposition

Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

Energy Technology Data Exchange (ETDEWEB)

Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

2013-04-01

We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

2015-01-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10 −2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R RMS of ∼0.4 nm

Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

Science.gov (United States)

Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

2010-12-01

Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

Atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver with flowing gas and flowing atmospheric plasma

Science.gov (United States)

Khan, T. M.; Pokle, A.; Lunney, J. G.

2018-04-01

Two methods of atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver are described. In both methods the ablation plume, produced by a 248 nm, 20 ns excimer laser in gas, is strongly confined near the target and forms a nanoparticle aerosol. For both the flowing gas, and the atmospheric plasma from a dielectric barrier discharge plasma source, the aerosol is entrained in the flow and carried to a substrate for deposition. The nanoparticle films produced by both methods were examined by electron microscopy and optical absorption spectroscopy. With plasma assistance, the deposition rate was significantly enhanced and the film morphology altered. With argon gas, isolated nanoparticles of 20 nm size were obtained, whereas in argon plasma, the nanoparticles are aggregated in clusters of 90 nm size. Helium gas also leads to the deposition of isolated nanoparticles, but with helium plasma, two populations of nanoparticles are observed: one of rounded particles with a mean size of 26 nm and the other of faceted particles with a mean size 165 nm.

Comparison of soft and hard tissue ablation with sub-ps and ns pulse lasers

Energy Technology Data Exchange (ETDEWEB)

Da Silva, L.B.; Stuart, B.C.; Celliers, P.M.; Feit, M.D.; Glinsky, M.E.; Heredia, N.J.; Herman, S.; Lane, S.M.; London, R.A.; Matthews, D.L.; Perry, M.D.; Rubenchik, A.M. [Lawrence Livermore National Lab., CA (United States); Chang, T.D. [Veterans Administration Hospital, Martinez, CA (United States); Neev, J. [Beckman Laser Inst. and Medical Clinic, Irvine, CA (United States)

1996-05-01

Tissue ablation with ultrashort laser pulses offers several unique advantages. The nonlinear energy deposition is insensitive to tissue type, allowing this tool to be used for soft and hard tissue ablation. The localized energy deposition lead to precise ablation depth and minimal collateral damage. This paper reports on efforts to study and demonstrate tissue ablation using an ultrashort pulse laser. Ablation efficiency and extent of collateral damage for 0.3 ps and 1000 ps duration laser pulses are compared. Temperature measurements of the rear surface of a tooth section is also presented.

Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

Science.gov (United States)

Riascos, H.; Duque, J. S.; Orozco, S.

2017-01-01

ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

Science.gov (United States)

Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

2017-12-01

The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

Visualization of cavitation bubbles induced by a laser pulse

International Nuclear Information System (INIS)

Testud-Giovanneschi, P.; Dufresne, D.; Inglesakis, G.

1987-01-01

The I.M.F.M. researchers working on Laser-Matter Interaction are studying the effects induced on matter by a pulsed radiation energy deposit. In this research, the emphasis is on the laser liquids interaction field and more particularly the cavitation induced by a laser pulse or ''optical-cavitation'' as termed by W. Lauterborn (1). For bubbles investigations, the visualizations form a basic diagnostic. This paper presents the experimental apparatus of formation of bubbles, the visualization apparatus and different typical examples of photographic recordings

Photodisruption in biological tissues using femtosecond laser pulses

Science.gov (United States)

Shen, Nan

Transparent materials do not ordinarily absorb visible or near-infrared light. However, the intensity of a tightly focused femtosecond laser pulse is great enough that nonlinear absorption of the laser energy takes place in transparent materials, leading to optical breakdown and permanent material modification. Because the absorption process is nonlinear, absorption and material modification are confined to the extremely small focal volume. Optical breakdown in transparent or semi-transparent biological tissues depends on intensity rather than energy. As a result, focused femtosecond pulses induce optical breakdown with significantly less pulse energy than is required with longer pulses. The use of femtosecond pulses therefore minimizes the amount of energy deposited into the targeted region of the sample, minimizing mechanical and thermal effects that lead to collateral damage in adjacent tissues. We demonstrate photodisruptive surgery in animal skin tissue and single cells using 100-fs laser pulses. In mouse skin, we create surface incisions and subsurface cavities with much less collateral damage to the surrounding tissue than is produced with picosecond pulses. Using pulses with only a few nanojoules of energy obtained from an unamplified femtosecond oscillator, we destroy single mitochondria in live cells without affecting cell viability, providing insights into the structure of the mitochondrial network. An apparatus is constructed to perform subcellular surgery and multiphoton 3D laser scanning imaging simultaneously with a single laser and objective lens.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

International Nuclear Information System (INIS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

2012-01-01

Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Laser system using ultra-short laser pulses

Science.gov (United States)

Dantus, Marcos [Okemos, MI; Lozovoy, Vadim V [Okemos, MI; Comstock, Matthew [Milford, MI

2009-10-27

A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2005-05-15

Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

Growth of Sr1-xNdxCuOy thin films by rf-magnetron sputtering and pulsed-laser deposition

International Nuclear Information System (INIS)

Sugii, N.; Ichikawa, M.; Kuba, K.; Sakurai, T.; Iamamoto, K.; Yamauchi, H.

1992-01-01

This paper reports on Sr 1- x Nd x CuO y thin films grown on SrTiO 3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an infinite-layer structure whose lattice constants are: a=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr 14 Cu 24 O 41 structure. The laser-deposited films of Sr 1- x Nd x CuO y with x ≥ 0.075 were single phase of the infinite-layer structure. The lattice parameter c decreased and the lattice parameter a increased, as the Nd content, x, increased. The films with x=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K

Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

Science.gov (United States)

Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

2018-01-01

Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

International Nuclear Information System (INIS)

Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

2009-01-01

Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

OpenAIRE

Nematollahi, Mohammadreza; Yang, Xiaodong; Aas, Lars Martin Sandvik; Ghadyani, Zahra; Kildemo, Morten; Gibson, Ursula; Reenaas, Turid Worren

2015-01-01

We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0–7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related subbandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the ...

Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry

Directory of Open Access Journals (Sweden)

Rumen G. Nikov

2017-11-01

Full Text Available We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

Au nanostructure fabrication by pulsed laser deposition in open air: Influence of the deposition geometry.

Science.gov (United States)

Nikov, Rumen G; Dikovska, Anna Og; Nedyalkov, Nikolay N; Avdeev, Georgi V; Atanasov, Petar A

2017-01-01

We present a fast and flexible method for the fabrication of Au nanocolumns. Au nanostructures were produced by pulsed laser deposition in air at atmospheric pressure. No impurities or Au compounds were detected in the resulting samples. The nanoparticles and nanoaggregates produced in the ablated plasma at atmospheric pressure led to the formation of chain-like nanostructures on the substrate. The dependence of the surface morphology of the samples on the deposition geometry used in the experimental set up was studied. Nanocolumns of different size and density were produced by varying the angle between the plasma plume and the substrate. The electrical, optical, and hydrophobic properties of the samples were studied and discussed in relation to their morphology. All of the nanostructures were conductive, with conductivity increasing with the accumulation of ablated material on the substrate. The modification of the electrical properties of the nanostructures was demonstrated by irradiation by infrared light. The Au nanostructures fabricated by the proposed technology are difficult to prepare by other methods, which makes the simple implementation and realization in ambient conditions presented in this work more ideal for industrial applications.

Zn-vacancy related defects in ZnO grown by pulsed laser deposition

Science.gov (United States)

Ling, F. C. C.; Luo, C. Q.; Wang, Z. L.; Anwand, W.; Wagner, A.

2017-02-01

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

Shape effect in FMR of Ni-Co-Mn-In layers obtained by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Dubiel Łukasz

2017-01-01

Full Text Available We have studied thin layers of Ni50-xCoxMn50-yIny alloys on (001 Si substrate obtained by pulsed laser deposition method (PLD using YAG Nd3+ laser operating at second harmonic. The target was bulk Ni50-xCoxMn50-yIny (x = 5, y = 14.5 alloy prepared by induction melting of pure elements under argon atmosphere. Magnetic properties were investigated on Bruker X band EPR spectrometer (9.36 GHz at room temperature. The magnetic resonance spectrum consists of non-symmetric lines with resonance field within wide field range (2500-4800 Gs depending on the orientation of the static field in the plane perpendicular to the layer. Calculated spectroscopic splitting factor g = 2.09.

In situ monitoring of electrical resistance during deposition of Ag and Al thin films by pulsed laser deposition: comparative study

Czech Academy of Sciences Publication Activity Database

Abdellaoui, N.; Pereira, A.; Novotný, Michal; Bulíř, Jiří; Fitl, Přemysl; Lančok, Ján; Moine, B.; Pillonnet, A.

2017-01-01

Roč. 418, Oct (2017), s. 517-521 ISSN 0169-4332 R&D Projects: GA MŠk LO1409; GA ČR GA16-22092S; GA ČR(CZ) GA14-10279S; GA MŠk LM2015088; GA MŠk(CZ) 7AMB14FR010 Institutional support: RVO:68378271 Keywords : pulsed laser deposition * metallic thin film * in-situ resistance measurement * silver * aluminium Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

Pulsed laser deposition of Ag nanoparticles on titanium hydroxide/oxide nanobelt arrays for highly sensitive surface-enhanced Raman spectroscopy

International Nuclear Information System (INIS)

Jing, Yuting; Wang, Huanwen; Zhao, Jie; Yi, Huan; Wang, Xuefeng

2015-01-01

Highlights: • Silver nanoparticles (NPs) were deposited on Ti(OH) 4 nanobelt by pulsed laser deposition (PLD). • The highest enhancement factor of 10 6 and a maximum relative standard deviation (RSD) of 0.18. • Ag 2 O play important role for the high sensitivity Raman phenomenon. • Charge transfer from Ag NPs is also responsible for the enhancement ability. - Abstract: Surface-enhanced Raman scattering (SERS) substrate of Ti(OH) 4 nanobelt arrays (NBAs) was synthesized by a hydrothermal reaction, on which silver nanoparticles (NPs) were deposited by pulsed laser deposition (PLD). Field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) revealed the effective high specific surface area with silver NPs decorated on three-dimensional NBAs. Using rhodamine 6G (R6G) as an analyte molecule, the highest enhancement factor of 10 6 and a maximum relative standard deviation (RSD) of 0.18 were obtained. It has been found that the specific morphology of these composite nanobelt arrays and the formation of Ag 2 O play important role for the high sensitivity Raman phenomenon. In addition, the surface plasmon resonance wavelength of Ag decorated Ti(OH) 4 NBAs and the charge transfer from Ag NPs are also responsible for the enhancement ability. For comparison SERS was investigated with silver particles decorated on TiO 2 NBAs, which is much less active

Structural, microstructural and transport properties study of lanthanum lithium titanium perovskite thin films grown by Pulsed Laser Deposition

International Nuclear Information System (INIS)

Maqueda, O.; Sauvage, F.; Laffont, L.; Martinez-Sarrion, M.L.; Mestres, L.; Baudrin, E.

2008-01-01

Lanthanum lithium titanate thin films were grown by Pulsed Laser Deposition. La 0.57 Li 0.29 TiO 3 dense films with smooth surfaces were obtained after optimization of the growth parameters. Such films deposited at 700 deg. C under 15 Pa are nano-crystalline with domains corresponding to the cubic and tetragonal modifications of this phase. In relation to the measured conductivities/activation energy and to previous works, we clearly underlined that the films of practical interest, prepared at relatively low temperature, are predominantly formed from the tetragonal ordered phase

Ultra-Smooth ZnS Films Grown on Silicon via Pulsed Laser Deposition

Science.gov (United States)

Reidy, Christopher; Tate, Janet

2011-10-01

Ultra-smooth, high quality ZnS films were grown on (100) and (111) oriented Si wafers via pulsed laser deposition with a KrF excimer laser in UHV (10-9 Torr). The resultant films were examined with optical spectroscopy, electron diffraction, and electron probe microanalysis. The films have an rms roughness of ˜1.5 nm, and the film stoichiometry is approximately Zn:S :: 1:0.87. Additionally, each film exhibits an optical interference pattern which is not a function of probing location on the sample, indicating excellent film thickness uniformity. Motivation for high-quality ZnS films comes from a proposed experiment to measure carrier amplification via impact ionization at the boundary between a wide-gap and a narrow-gap semiconductor. If excited charge carriers in a sufficiently wide-gap harvester can be extracted into a narrow-gap host material, impact ionization may occur. We seek near-perfect interfaces between ZnS, with a direct gap between 3.3 and 3.7 eV, and Si, with an indirect gap of 1.1 eV.

Particle growth mechanisms in Ag-ZrO2 and Au-ZrO2 granular films obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Konstantinovic, Zorica; Muro, Montserrat Garcia del; Varela, Manuel; Batlle, Xavier; Labarta, AmIlcar

2006-01-01

Thin films consisting of Ag and Au nanoparticles embedded in amorphous ZrO 2 matrix were grown by pulsed laser deposition in a wide range of metal volume concentrations in the dielectric regime (0.08 Ag Au c (Ag)∼0.28 and x c (Au)∼0.52)

Nanometer sized structures grown by pulsed laser deposition

KAUST Repository

ElZein, Basma

2015-10-01

Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber

Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition

International Nuclear Information System (INIS)

Zheng, B.J.; Lian, J.S.; Zhao, L.; Jiang, Q.

2010-01-01

Transparent indium-doped cadmium oxide (In-CdO) thin films were deposited on quartz glass substrates by pulse laser deposition (PLD) from ablating Cd-In metallic target at a fixed pressure 10 Pa and a fixed substrate temperature 300 deg. C. The influences of indium concentrations in target on the microstructure, optical and electrical performances were studied. When the indium concentration reaches to 3.9 wt%, the as-deposited In-CdO film shows high optical transmission in visible light region, obviously enhanced direct band gap energy (2.97 eV), higher carrier concentration and lower electric resistivity compared with the undoped CdO film, while a further increase of indium concentration to 5.6 wt% induces the formation of In 2 O 3 , which reverse the variation of these parameters and performance.

Co-P-B catalyst thin films prepared by electroless and pulsed laser deposition for hydrogen generation by hydrolysis of alkaline sodium borohydride: A comparison

International Nuclear Information System (INIS)

Patel, N.; Fernandes, R.; Bazzanella, N.; Miotello, A.

2010-01-01

Co-P-B catalyst thin films have been synthesized on Ni-foam and glass substrate by using electroless deposition (ED) and pulsed laser deposition (PLD) respectively. The efficiency of these catalyst films was tested by catalytic hydrolysis of NaBH 4 for H 2 generation. While the chemically produced Co-P-B film on Ni-foam shows similar activity as that of their corresponding powder, the Co-P-B film deposited by PLD exhibits much superior H 2 generation rate as compared to Co-P-B powder. We attribute this increased efficiency to the special features of the Co-P-B films which are in the form of nanoparticle-assembled films, a peculiar characteristic of PLD films for appropriate choice of the pulse laser parameters. The surface nanoparticle-configuration increases the active surface area and also favors electronic exchange mechanisms to promote hydrolysis process for H 2 gas generation. The films deposited by using laser energy density of 3 J/cm 2 show the highest activity in connection to the best configuration of the ablated nanoparticles. Different numbers of Co-P-B layers were deposited on Ni-foam by ED and it was found that at least four layers are required for complete coverage of the foam to have the best activity.

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

International Nuclear Information System (INIS)

Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

2013-01-01

Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

2013-03-01

Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

Science.gov (United States)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Laser-induced ion emission during polymer deposition from a flash-frozen water ice matrix

DEFF Research Database (Denmark)

Rodrigo, K.; Toftmann, Bo; Schou, Jørgen

2004-01-01

Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate was accomp......Flash-frozen water solutions of 1% weight PEG (polyethylene glycol) at -50 degreesC were used as targets at a laser wavelength of 355 nm for polymer deposition with Matrix-Assisted Pulsed Laser Evaporation (MAPLE). For medium laser fluences the transfer of PEG material to the substrate...

Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets

Energy Technology Data Exchange (ETDEWEB)

Camps, I., E-mail: camps@io.cfmac.csic.es [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Ramírez, J.M. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, c/Martí i Franqués 1, 08028 Barcelona (Spain); Mariscal, A.; Serna, R. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Garrido, B. [MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, c/Martí i Franqués 1, 08028 Barcelona (Spain); Perálvarez, M.; Carreras, J. [IREC, Fundació Privada Institut de Recerca en Energia de Catalunya (Spain); Barradas, N.P.; Alves, L.C. [C" 2TN, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela (Portugal); Alves, E. [IPFN, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10, 2695-066 Bobadela (Portugal)

2015-05-01

Highlights: • PLD production of Er-doped thin films from a low cost commercial SiAlON target. • The role of the ablation fluence on the composition, optical properties as well as on the light emission performance at 1.5 μm. • The optimized performance is obtained for the samples deposited at the higher used ablation energy density. Further improvement was achieved through annealing. - Abstract: We report the preparation and optical performance of thin films produced by pulsed laser deposition in vacuum at room temperature, by focusing an ArF excimer laser onto two separate targets: a commercial ceramic SiAlON and a metallic Er target. As a result of the alternate deposition Er:SiAlON films were formed. The as grown films exhibited an Er-related emission peaking at 1532 nm. The role of the PLD energy density during deposition on the final matrix film was investigated, in order to achieve an optimized matrix composition with enhanced optical properties, and its effect on the light emission performance.

Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

International Nuclear Information System (INIS)

Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

2013-01-01

The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

Pulsed laser deposition of yttrium photocathode suitable for use in radio-frequency guns

Science.gov (United States)

Lorusso, A.; Trovò, M.; Demidovich, A.; Cinquegrana, P.; Gontad, F.; Broitman, E.; Chiadroni, E.; Perrone, A.

2017-12-01

Yttrium (Y) thin film was grown by pulsed laser deposition (PLD) on a copper (Cu) polycrystalline substrate. Ex situ morphological and structural characterisations of the circular Y film of 1.2 µm thickness and 3 mm diameter have shown a very low droplet density on the film surface and a crystalline feature with a preferred orientation along the Y (100) plane. Moreover, Y thin film resulted in being very adherent to the Cu substrate and more scratch resistant than Cu bulk. A twin thin film was deposited also on a Cu backflange of a radio-frequency (RF) gun to test the suitability of the metallic thin film as photocathode. It was observed that the Y-coated photocathode was characterised by a quantum efficiency ( QE) higher than that of the Cu bulk photocathode even if the presence of space charge effects didn't allow deriving the absolute maximum value of QE of Y photocathode.

Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

Science.gov (United States)

Orozco, S.; Riascos, H.; Duque, S.

2016-02-01

ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

Tritium recovery from co-deposited layers using 193-nm laser

Science.gov (United States)

Shu, W. M.; Kawakubo, Y.; Nishi, M. F.

Recovery of tritium from co-deposited layers formed in deuterium-tritium plasma operations of the TFTR (Tokamak Fusion Test Reactor) was investigated by the use of an ArF excimer laser operating at the wavelength of 193 nm. At the laser energy density of 0.1 J/cm2, a transient spike of the tritium-release rate was observed at initial irradiation. Hydrogen isotopes were released in the form of hydrogen-isotope molecules during the laser irradiation in vacuum, suggesting that tritium can be recovered readily from the released gases. In a second experiment, hydrogen (tritium) recovery from the co-deposited layers on JT-60 tiles that had experienced hydrogen-plasma operations was investigated by laser ablation with a focused beam of the excimer laser. The removal rate of the co-deposited layers was quite low when the laser energy density was smaller than the ablation threshold (1.0 J/cm2), but reached 1.1 μm/pulse at the laser energy density of 7.6 J/cm2. The effective absorption coefficient in the co-deposited layers at the laser wavelength was determined to be 1.9 μm-1. The temperature of the surface during the irradiation at the laser energy density of 0.5 J/cm2 was measured on the basis of Planck's law of radiation, and the maximum temperature during the irradiation decreased from 3570 K at the initial irradiation to 2550 K at the 1000th pulse of the irradiation.

Hydroxyapatite thin films synthesized by pulsed laser deposition and magnetron sputtering on PMMA substrates for medical applications

International Nuclear Information System (INIS)

Socol, G.; Macovei, A.M.; Miroiu, F.; Stefan, N.; Duta, L.; Dorcioman, G.; Mihailescu, I.N.; Petrescu, S.M.; Stan, G.E.; Marcov, D.A.; Chiriac, A.; Poeata, I.

2010-01-01

Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates - used as cranio-spinal implant-type structures - by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4-2.75 J/cm 2 , pressures of 30-46.66 Pa and 10 Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3 Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4 J/cm 2 , reduced pressure of water vapours and a 100 o C/4 h thermal treatment. For MS, the best results were obtained for 80% Ar + 20% O 2 reactive atmosphere at low RF power (∼75 W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells.

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

International Nuclear Information System (INIS)

Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

2007-01-01

Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

2012-04-15

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

Residual heat deposition in dental enamel during IR laser ablation at 2.79, 2.94, 9.6, and 10.6 microm.

Science.gov (United States)

Fried, D; Ragadio, J; Champion, A

2001-01-01

The principal factor limiting the rate of laser ablation of dental hard tissue is the risk of excessive heat accumulation in the tooth. Excessive heat deposition or accumulation may result in unacceptable damage to the pulp. The objective of this study was to measure the residual heat deposition during the laser ablation of dental enamel at those IR laser wavelengths well suited for the removal of dental caries. Optimal laser ablation systems minimize the residual heat deposition in the tooth by efficiently transferring the deposited laser energy to kinetic and internal energy of ejected tissue components. The residual heat deposition in dental enamel was measured at laser wavelengths of 2.79, 2.94, 9.6, and 10.6 microm and pulse widths of 150 nsec -150 microsec using bovine block "calorimeters." Water droplets were applied to the surface before ablation with 150 microsec Er:YAG laser pulses to determine the influence of an optically thick water layer on reducing heat deposition. The residual heat was at a minimum for fluences well above the ablation threshold where measured values ranged from 25-70% depending on pulse duration and wavelength for the systems investigated. The lowest values of the residual heat were measured for short (heat deposition during ablation with 150 microsec Er:YAG laser pulses. Residual heat deposition can be markedly reduced by using CO(2) laser pulses of less than 20 microsec duration and shorter Q-switched Er:YAG and Er:YSGG laser pulses for enamel ablation. Copyright 2001 Wiley-Liss, Inc.

Comparative study of pulsed laser cleaning applied to weathered marble surfaces

Energy Technology Data Exchange (ETDEWEB)

Ortiz, P., E-mail: mportcal@upo.es [Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, 41013 Seville (Spain); Antúnez, V.; Ortiz, R.; Martín, J.M. [Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, 41013 Seville (Spain); Gómez, M.A. [Instituto Andaluz de Patrimonio Histórico, Camino de los Descubrimientos s/n, 41092 Seville (Spain); Hortal, A.R.; Martínez-Haya, B. [Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, 41013 Seville (Spain)

2013-10-15

The removal of unwanted matter from surface stones is a demanding task in the conservation of cultural heritage. This paper investigates the effectiveness of near-infrared (IR) and ultraviolet (UV) laser pulses for the cleaning of surface deposits, iron oxide stains and different types of graffiti (black, red and green sprays and markers, and black cutting-edge ink) on dolomitic white marble. The performance of the laser techniques is compared to common cleaning methods on the same samples, namely pressurized water and chemical treatments. The degree of cleaning achieved with each technique is assessed by means of colorimetric measurements and X-ray microfluorescence. Eventual morphological changes induced on the marble substrate are monitored with optical and electronic microscopy. It is found that UV pulsed laser ablation at 266 nm manages to clean all the stains except the cutting-edge ink, although some degree of surface erosion is produced. The IR laser pulses at 1064 nm can remove surface deposits and black spray acceptably, but a yellowing is observed on the stone surface after treatment. An economic evaluation shows that pulsed laser cleaning techniques are advantageous for the rapid cleaning of small or inaccessible surface areas, although their extensive application becomes expensive due to the long operating times required.

Comparative study of pulsed laser cleaning applied to weathered marble surfaces

International Nuclear Information System (INIS)

Ortiz, P.; Antúnez, V.; Ortiz, R.; Martín, J.M.; Gómez, M.A.; Hortal, A.R.; Martínez-Haya, B.

2013-01-01

The removal of unwanted matter from surface stones is a demanding task in the conservation of cultural heritage. This paper investigates the effectiveness of near-infrared (IR) and ultraviolet (UV) laser pulses for the cleaning of surface deposits, iron oxide stains and different types of graffiti (black, red and green sprays and markers, and black cutting-edge ink) on dolomitic white marble. The performance of the laser techniques is compared to common cleaning methods on the same samples, namely pressurized water and chemical treatments. The degree of cleaning achieved with each technique is assessed by means of colorimetric measurements and X-ray microfluorescence. Eventual morphological changes induced on the marble substrate are monitored with optical and electronic microscopy. It is found that UV pulsed laser ablation at 266 nm manages to clean all the stains except the cutting-edge ink, although some degree of surface erosion is produced. The IR laser pulses at 1064 nm can remove surface deposits and black spray acceptably, but a yellowing is observed on the stone surface after treatment. An economic evaluation shows that pulsed laser cleaning techniques are advantageous for the rapid cleaning of small or inaccessible surface areas, although their extensive application becomes expensive due to the long operating times required.

Comparative study of pulsed laser cleaning applied to weathered marble surfaces

Science.gov (United States)

Ortiz, P.; Antúnez, V.; Ortiz, R.; Martín, J. M.; Gómez, M. A.; Hortal, A. R.; Martínez-Haya, B.

2013-10-01

The removal of unwanted matter from surface stones is a demanding task in the conservation of cultural heritage. This paper investigates the effectiveness of near-infrared (IR) and ultraviolet (UV) laser pulses for the cleaning of surface deposits, iron oxide stains and different types of graffiti (black, red and green sprays and markers, and black cutting-edge ink) on dolomitic white marble. The performance of the laser techniques is compared to common cleaning methods on the same samples, namely pressurized water and chemical treatments. The degree of cleaning achieved with each technique is assessed by means of colorimetric measurements and X-ray microfluorescence. Eventual morphological changes induced on the marble substrate are monitored with optical and electronic microscopy. It is found that UV pulsed laser ablation at 266 nm manages to clean all the stains except the cutting-edge ink, although some degree of surface erosion is produced. The IR laser pulses at 1064 nm can remove surface deposits and black spray acceptably, but a yellowing is observed on the stone surface after treatment. An economic evaluation shows that pulsed laser cleaning techniques are advantageous for the rapid cleaning of small or inaccessible surface areas, although their extensive application becomes expensive due to the long operating times required.

Nature of the pulsed laser process for the deposition of high T/sub c/ superconducting thin films

International Nuclear Information System (INIS)

Venkatesan, T.; Wu, X.D.; Inam, A.

1988-01-01

The pulsed laser thin-film deposition process can enable preparation of thin films of complex composition with good control over the film stoichiometry. The film compositions are similar to that of the target pellet and as a consequence this technique appears to be an ideal method for preparing high T/sub c/ thin films on a variety of substrates.The factors which contribute to this beneficial phenomenon have been explored by a laser ionization mass spectrometry (LIMS) and a post ablation ionization (PAI) neutral velocity analysis technique in order to determine the mass and velocities of the laser ejected material. In addition, x-ray absorption measurements on films deposited onto substrates at room temperature were performed in order to identify the presence of short-range crystalline order in the films. Both of these studies rule out the ejection of stoichiometric clusters of material from the pellet during the laser ablation/deposition process. Instead, binary and ternary suboxides are emitted from the target pellet. These suboxides most likely have unit sticking coefficient to the substrate which could contribute to the preservation of the film stoichiometry. The velocity distribution of several neutral species (e.g., BaO) indicates that particles have energies of several eV. Thus the effective temperatures of the emitted species are ∼15 x 10 3 K, and these energetic particles may facilitate growth of the crystalline films at low substrate temperatures

Effects of laser energy fluence on the onset and growth of the Rayleigh–Taylor instabilities and its influence on the topography of the Fe thin film grown in pulsed laser deposition facility

International Nuclear Information System (INIS)

Mahmood, S.; Rawat, R. S.; Wang, Y.; Lee, S.; Tan, T. L.; Springham, S. V.; Lee, P.; Zakaullah, M.

2012-01-01

The effect of laser energy fluence on the onset and growth of Rayleigh–Taylor (RT) instabilities in laser induced Fe plasma is investigated using time-resolved fast gated imaging. The snow plow and shock wave models are fitted to the experimental results and used to estimate the ablation parameters and the density of gas atoms that interact with the ablated species. It is observed that RT instability develops during the interface deceleration stage and grows for a considerable time for higher laser energy fluence. The effects of RT instabilities formation on the surface topography of the Fe thin films grown in pulsed laser deposition system are investigated (i) using different laser energy fluences for the same wavelength of laser radiation and (ii) using different laser wavelengths keeping the energy fluence fixed. It is concluded that the deposition achieved under turbulent condition leads to less smooth deposition surfaces with bigger sized particle agglomerates or network.

Growth of strained, ferroelectric NaNbO{sub 3} thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Sellmann, Jan; Schwarzkopf, Jutta; Duk, Andreas; Kwasniewski, Albert; Schmidbauer, Martin; Fornari, Roberto [IKZ, Berlin (Germany)

2012-07-01

Due to its promising ferro-/piezoelectric properties and high Curie temperature NaNbO{sub 3} has attracted much attention. In contrast to bulk crystals, thin epitaxial films may incorporate and maintain a certain compressive or tensile lattice strain, depending on the used substrate/film combination. This deformation of the crystal lattice is known to strongly influence the ferroelectric properties of perovskites. In the case of NaNbO{sub 3} compressive strain is achieved in films deposited on NdGaO{sub 3} and SrTiO{sub 3} substrates while deposition on DyScO{sub 3} and TbScO{sub 3} leads to tensile in-plane strain. In order to characterize and practically apply the ferroelectric films, it is necessary to embed them in a capacitor structure for which we use pseudomorphically grown SrRuO{sub 3} as bottom electrodes. We report on the deposition of SrRuO{sub 3} and NaNbO{sub 3} single layers on SrTiO{sub 3}, DyScO{sub 3}, TbScO{sub 3} and NbGaO{sub 3} substrates by means of pulsed laser deposition. By adjusting the substrate temperature, the oxygen partial pressure and the laser frequency we have successfully deposited smooth, strained, single phase NaNbO{sub 3} thin films. Investigations of the films by atomic force microscopy and high resolution X-ray diffraction reveal the dependence of the surface morphology and the incorporated lattice strain on the deposition parameters and the lattice mismatch, respectively. All films exhibit piezoelectric properties, as proven by piezoresponse force microscopy.

Parametric study of self-forming ZnO Nanowall network with honeycomb structure by Pulsed Laser Deposition

KAUST Repository

El Zein, B.

2014-02-01

The successful synthesis of catalyst free zinc oxide (ZnO) Nanowall networks with honeycomb like structure by Pulsed Laser Deposition (PLD) is demonstrated in this paper. The synthesis was conducted directly on Silicon (Si) (1 0 0) and Glass-ITO substrates without the intermediate of metal catalyst, template or chemical etching. Kinetic of growth and effects of gas pressure and substrate temperature were studied by depositing ZnO films on P type Si (1 0 0) substrates with different deposition parameters. The optimized growth parameters were found as: 10 mTorr oxygen pressure, 600 C substrate temperature, and deposition duration equal or higher than 10 min. X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Photoluminescence (PL) measurements were used to investigate structural, microstructural and optical properties of ZnO Nanowall networks produced. They exhibit a non-uniform size high quality honeycomb structure with low deep level defects. © 2013 Elsevier B.V.

Inorganic nanocomposite films with polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition

Science.gov (United States)

Darwish, Abdalla M.; Sarkisov, Sergey S.; Mele, Paolo; Saini, Shrikant; Moore, Shaelynn; Bastian, Tyler; Dorlus, Wydglif; Zhang, Xiaodong; Koplitz, Brent

2017-08-01

We report on the new class of inorganic nanocomposite films with the inorganic phase hosting the polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition of the inorganic target material and matrix assisted pulsed laser evaporation of the polymer (MBMT-PLD/MAPLE). We used the exemplary nanocomposite thermoelectric films of aluminum-doped ZnO known as AZO with the nanofillers made of poly(methyl methacrylate) known as PMMA on various substrates such as SrTiO3, sapphire, fused silica, and polyimide. The AZO target was ablated with the second harmonic (532 nm) of the Nd:YAG Q-switched laser while PMMA was evaporated from its solution in chlorobenzene frozen in liquid nitrogen with the fundamental harmonic (1064 nm) of the same laser (50 Hz pulse repetition rate). The introduction of the polymer nanofillers increased the electrical conductivity of the nanocomposite films (possibly due to the carbonization of PMMA and the creation of additional channels of electric current) three times and reduced the thermal conductivity by 1.25 times as compared to the pure AZO films. Accordingly, the increase of the thermoelectric figure-of merit ZT would be 4 times. The best performance was observed for the sapphire substrates where the films were the most uniform. The results point to a huge potential of the optimization of a broad variety of optical, opto-electronic, and solar-power nanocomposite inorganic films by the controllable introduction of the polymer nanofillers using the MBMT-PLD/MAPLE method.

Deposition and characterization of ITO films produced by laser ablation at 355 nm

DEFF Research Database (Denmark)

Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

2002-01-01

Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

KAUST Repository

Baumgardner, William J.

2011-09-27

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

KAUST Repository

Alarawi, Abeer

2014-06-23

Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano-rods prepared, for the first time to our knowledge, by pulsed laser deposition (PLD) without any catalyst. X-ray diffraction (XRD) patterns shows that these Eu doped ZnO nanorods are grown along the c-axis of ZnO wurtzite structure. We have studied the effect of the PLD growth conditions on forming vertically aligned Eu doped ZnO nanorods. The structural properties of the material are investigated using a -scanning electron microscope (SEM). The PLD parameters must be carefully controlled in order to obtain c-axis oriented ZnO nanorods on sapphire substrates, without the use of any catalyst. The experiments conducted in order to identify the optimal growth conditions confirmed that, by adjusting the target-substrate distance, substrate temperature, laser energy and deposition duration, the nanorod size could be successfully controlled. Most importantly, the results indicated that the photoluminescence (PL) properties reflect the quality of the ZnO nanorods. These parameters can change the material’s structure from one-dimensional to two-dimensional however the laser energy and frequency affect the size and the height of the nanorods; the xygen pressure changes the density of the nanorods.

High laser-fluence deposition of organic materials in water ice matrices by ''MAPLE''

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Rodrigo, K.; Schou, Jørgen

2005-01-01

Matrix assisted pulsed laser evaporation (MAPLE) is a deposition technique for organic material. Water ice was used as a matrix for the biotechnologically important guest material, polyethylene glycol (PEG), for concentrations from 0.5 to 4 wt.%. The target was irradiated with 6 ns laser pulses...

Factors controlling the microstructure of Ce0.9Gd0.1O2-δ films in pulsed laser deposition process

DEFF Research Database (Denmark)

Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Döbeli, M.

2010-01-01

Films of Ce0.9Gd0.1O2-delta (CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD p...

Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

International Nuclear Information System (INIS)

Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

2006-01-01

Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

Eu{sup 3+} activated GaN thin films grown on sapphire by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Perea-Lopez, Nestor; Tao, Jonathan H. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); McKittrick, Joanna [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, CA 92093 (United States); Talbot, Jan B. [Materials Science and Engineering Program, University of California at San Diego, La Jolla, CA 92093 (United States); Department of Nanoengineering, University of California at San Diego, La Jolla, CA 92093 (United States); Raukas, M.; Laski, J.; Mishra, K.C. [OSRAM SYLVANIA Central Research, Beverly, MA 01915-1068 (United States); Hirata, Gustavo [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, C. P. 22800 Ensenada Baja California (Mexico)

2008-07-01

By means of pulsed laser deposition, polycrystalline thin films of GaN doped with Eu{sup 3+} were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga{sub 2}O{sub 3} and Eu{sub 2}O{sub 3} were dissolved in nitric acid, which produces Ga{sub (1-x)}Eu{sub x} (NO{sub 3}){sub 3}. Next, the nitrates were oxidized in a tubular furnace with O{sub 2} flow forming Ga{sub 2(1-x)}Eu{sub 2x}O{sub 3}. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga{sub (1-x)}Eu{sub x}N. Film growth was done in a stainless steel vacuum chamber partially filled with N{sub 2} (400 mTorr). For the deposit, the 3{sup rd} harmonic of a Nd:YAG laser ({lambda}=355 nm) was focused on the surface of the target. After deposition, annealing in NH{sub 3} was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure and composition of layers of Ni-Co-Mn-In Heusler alloys obtained by pulsed laser deposition

International Nuclear Information System (INIS)

Wisz, Grzegorz; Sagan, Piotr; Stefaniuk, Ireneusz; Cieniek, Bogumil; Maziarz, Wojciech; Kuzma, Marian

2017-01-01

In present work we were analysing thin layers of Ni-Co-Mn-In alloys, grown by pulsed laser deposition method (PLD) on Si, NaCl and glass substrates. For target ablation the second harmonics of YAG:Nd 3+ laser was used. The target had the composition Ni 45 Co 5 Mn 34.5 In 14.5 . The morphology of the layers and composition were studied by electron microscopy TESCAN Vega3 equipped with microanalyzer EDS – Easy EdX system working with Esprit Bruker software. The X-ray diffraction measurements (XRD), performed on spectrometer Bruker XRD D8 Advance system, reveals Ni 2 -Mn-In cubic phase having lattice constant a = 6.02Å.

Plasma interactions determine the composition in pulsed laser deposited thin films

Science.gov (United States)

Chen, Jikun; Döbeli, Max; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas

2014-09-01

Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La0.6Sr0.4MnO3, we demonstrate for as grown La0.6Sr0.4MnO3-δ films that a congruent transfer of metallic species is achieved in two pressure windows: ˜10-3 mbar and ˜2 × 10-1 mbar. In the intermediate pressure range, La0.6Sr0.4MnO3-δ becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)

DEFF Research Database (Denmark)

Purice, Andreea; Schou, Jørgen; Pryds, Nini

2007-01-01

Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 mn with a fluence of 2 J/cm(2). The surface quality of the thin....... The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD)). (C) 2007 Elsevier B.V. All...

Theoretical research of multi-pulses laser induced damage in dielectrics

International Nuclear Information System (INIS)

Luo Jin; Liu Zhichao; Chen Songlin; Ma Ping

2013-01-01

The pulse width is different, the mechanism of the laser-matter interaction is different. Damage results from plasma formation and ablation forτ≤10 ps and from heat depositing and conventional melting for τ>100 ps. Two theoretical models of transparent dielectrics irradiated by multi-pulses laser are respectively developed based on the above-mentioned different mechanism. One is the dielectric breakdown model based on electron density evolution equation for femtosecond multi-pluses laser, the other is the dielectric heat-damage model based on Fourier's heat exchange equation for nanosecond multi-pluses laser. Using these models, the effects of laser parameters and material parameters on the laser-induced damage threshold of dielectrics are analyzed. The analysis results show that different parameters have different influence on the damage threshold. The effect of parameters on the multi -pulses damage threshold is not entirely the same to the single-pulse damage threshold. The multi-pulses damage mechanism of dielectrics is discussed in detail, considering the effect of different parameters. The discussion provides more information for understanding its damage process and more knowledge to improve its damage thresholds. And the relationship between damage threshold and pulse number is illustrated, it is in good agreement with experimental results. The illustration can help us to predict the multi-pulses damage threshold and the lifetime of optical components. (authors)

Effect of laser pulse energies in laser induced breakdown spectroscopy in double-pulse configuration

International Nuclear Information System (INIS)

Benedetti, P.A.; Cristoforetti, G.; Legnaioli, S.; Palleschi, V.; Pardini, L.; Salvetti, A.; Tognoni, E.

2005-01-01

In this paper, the effect of laser pulse energy on double-pulse laser induced breakdown spectroscopy signal is studied. In particular, the energy of the first pulse has been changed, while the second pulse energy is held fixed. A systematic study of the laser induced breakdown spectroscopy signal dependence on the interpulse delay is performed, and the results are compared with the ones obtained with a single laser pulse of energy corresponding to the sum of the two pulses. At the same time, the crater formed at the target surface is studied by video-confocal microscopy, and the variation in crater dimensions is correlated to the enhancement of the laser induced breakdown spectroscopy signal. The results obtained are consistent with the interpretation of the double-pulse laser induced breakdown spectroscopy signal enhancement in terms of the changes in ambient gas pressure produced by the shock wave induced by the first laser pulse

Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

2016-09-01

Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

2013-01-01

Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

2013-12-15

Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

DEFF Research Database (Denmark)

Kyhle, Anders; Skov, Johannes; Hjorth, Søren

1994-01-01

We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.......6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport...... critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down....

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

International Nuclear Information System (INIS)

Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

2011-01-01

Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

Utilizing pulsed laser deposition lateral inhomogeneity as a tool in combinatorial material science.

Science.gov (United States)

Keller, David A; Ginsburg, Adam; Barad, Hannah-Noa; Shimanovich, Klimentiy; Bouhadana, Yaniv; Rosh-Hodesh, Eli; Takeuchi, Ichiro; Aviv, Hagit; Tischler, Yaakov R; Anderson, Assaf Y; Zaban, Arie

2015-04-13

Pulsed laser deposition (PLD) is widely used in combinatorial material science, as it enables rapid fabrication of different composite materials. Nevertheless, this method was usually limited to small substrates, since PLD deposition on large substrate areas results in severe lateral inhomogeneity. A few technical solutions for this problem have been suggested, including the use of different designs of masks, which were meant to prevent inhomogeneity in the thickness, density, and oxidation state of a layer, while only the composition is allowed to be changed. In this study, a possible way to take advantage of the large scale deposition inhomogeneity is demonstrated, choosing an iron oxide PLD-deposited library with continuous compositional spread (CCS) as a model system. An Fe₂O₃-Nb₂O₅ library was fabricated using PLD, without any mask between the targets and the substrate. The library was measured using high-throughput scanners for electrical, structural, and optical properties. A decrease in electrical resistivity that is several orders of magnitude lower than pure α-Fe₂O₃ was achieved at ∼20% Nb-O (measured at 47 and 267 °C) but only at points that are distanced from the center of the PLD plasma plume. Using hierarchical clustering analysis, we show that the PLD inhomogeneity can be used as an additional degree of freedom, helping, in this case, to achieve iron oxide with much lower resistivity.

Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

2015-01-01

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, H.; Auyeung, R.C.Y.; Pique, A.

2011-01-01

Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

OpenAIRE

Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H. -U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

2017-01-01

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistiv...

Nanomechanical properties of GaSe thin films deposited on Si(1 1 1) substrates by pulsed laser deposition

International Nuclear Information System (INIS)

Jian, Sheng-Rui; Juang, Jenh-Yih; Luo, Chih-Wei; Ku, Shin-An; Wu, Kaung-Hsiung

2012-01-01

Highlights: ► GaSe thin films are grown by PLD. ► Structural properties of GaSe thin films are measured by XRD. ► Hardness and Young’s modulus of GaSe thin films are measured by nanoindentation. - Abstract: The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(1 1 1) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (0 0 0 l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple “pop-in” events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young’s modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young’s modulus being increased from 1.2 ± 0.1 to 1.8 ± 0.1 GPa and from 39.6 ± 1.2 to 68.9 ± 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 °C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films.

The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Czech Academy of Sciences Publication Activity Database

Novotný, Michal; Marešová, Eva; Fitl, Přemysl; Vlček, Jan; Bergmann, M.; Vondráček, Martin; Yatskiv, Roman; Bulíř, Jiří; Hubík, Pavel; Hruška, Petr; Drahokoupil, Jan; Abdellaoui, N.; Vrňata, M.; Lančok, Ján

2016-01-01

Roč. 122, č. 3 (2016), 1-8, č. článku 225. ISSN 0947-8396 R&D Projects: GA MŠk(CZ) LG15050; GA ČR(CZ) GAP108/11/0958; GA MŠk(CZ) LM2011029; GA ČR(CZ) GA14-10279S; GA MŠk(CZ) 7AMB14FR010 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : samarium-doped zinc oxide zinc/phthalocyanine deposition * evaporation * pulsed laser deposition * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.455, year: 2016

Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

Energy Technology Data Exchange (ETDEWEB)

Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

2016-05-23

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

Laser detritiation and co-deposited layer characterisation for future ITER Installation

International Nuclear Information System (INIS)

Semerok, Alexandre; Brygo, Francois; Fomichev, Sergey V.; Champonnois, Francois; Weulersse, Jean-Marc; Thro, Pierre-Yves; Fichet, Pascal; Grisolia, Christian

2006-01-01

The experimental equipment in combination with pulsed Nd-YAG lasers was developed and applied to investigate co-deposited layer characterisation and ablation. Heating and ablation regimes were distinguished by ablation threshold fluence that was determined experimentally for graphite samples from TexTor (Germany) and TORE SUPRA (France) tokamaks. With 100 ns pulses, the ablation threshold for graphite substrate (2.5±0.5 J/cm 2 ) was much higher than the one for co-deposited layer (0.4±0.1 J cm -2 ). These threshold features are very promising to ensure self-controlled laser cleaning without substrate surface damage. The obtained optimal conditions (laser fluence F=1-2 J/cm 2 , 10-20 kHz repetition rate) were applied for co-deposited layer cleaning. The TexTor 50 μm thickness layer was almost completely removed after a single scanning without any damage of the graphite substrate. Cleaning rate of 0.2 m 2 /hour was demonstrated experimentally for 20 W mean laser power. A theoretical model of a complex surface heating (graphite or metal with a co-deposited layer) was developed to explain the experimental results and to obtain laser cleaning optimisation. A good agreement of the theoretical data with the experimental results was obtained. The studies on LIBS method for co-deposited layer characterisation have determined the analytical spectral lines for hydrogen, carbon, and other impurities (B, Fe, Si, and Cu) in TexTor graphite tile. The obtained results should be regarded optimistic for co-deposited layers characterisation by LIBS method. The development of certain laser methods and their application for in-situ detritiation and co-deposited layer characterisation are presented and discussed. (authors)

Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

KAUST Repository

Baras, Abdulaziz

2011-07-01

Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

Directory of Open Access Journals (Sweden)

Chih-Ping Yen

2016-08-01

Full Text Available The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP, and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE for application to dye-sensitized solar cell (DSSC is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

TiO2 nanoparticle thin film deposition by matrix assisted pulsed laser evaporation for sensing applications

International Nuclear Information System (INIS)

Caricato, A.P.; Capone, S.; Ciccarella, G.; Martino, M.; Rella, R.; Romano, F.; Spadavecchia, J.; Taurino, A.; Tunno, T.; Valerini, D.

2007-01-01

The MAPLE technique has been used for the deposition of nanostructured titania (TiO 2 ) nanoparticles thin films to be used for gas sensors applications. An aqueous solution of TiO 2 nanoparticles, synthesised by a novel chemical route, was frozen at liquid nitrogen temperature and irradiated with a pulsed ArF excimer laser in a vacuum chamber. A uniform distribution of TiO 2 nanoparticles with an average size of about 10 nm was deposited on Si and interdigitated Al 2 O 3 substrates as demonstrated by high resolution scanning electron microscopy-field emission gun inspection (SEM-FEG). Energy dispersive X-ray (EDX) analysis revealed the presence of only the titanium and oxygen signals and FTIR (Fourier transform infra-red) revealed the TiO 2 characteristic composition and bond. A comparison with a spin coated thin film obtained from the same solution of TiO 2 nanoparticles is reported. The sensing properties of the films deposited on interdigitated substrates were investigated, too

Deposition of organic dyes for dye-sensitized solar cell by using matrix-assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Yen, Chih-Ping [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Yu, Pin-Feng [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Wang, Jyhpyng [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China); Lin, Jiunn-Yuan [Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Chen, Yen-Mu [SuperbIN Co., Ltd., Taipei 114, Taiwan (China); Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Taoyuan 320, Taiwan (China)

2016-08-15

The deposition of various distinct organic dyes, including ruthenium complex N3, melanin nanoparticle (MNP), and porphyrin-based donor-π-acceptor dye YD2-o-C8, by using matrix-assisted pulsed laser evaporation (MAPLE) for application to dye-sensitized solar cell (DSSC) is investigated systematically. It is found that the two covalently-bonded organic molecules, i.e., MNP and YD2-o-C8, can be transferred from the frozen target to the substrate with maintained molecular integrity. In contrast, N3 disintegrates in the process, presumably due to the lower bonding strength of metal complex compared to covalent bond. With the method, DSSC using YD2-o-C8 is fabricated, and an energy conversion efficiency of 1.47% is attained. The issue of the low penetration depth of dyes deposited by MAPLE and the possible resolution to it are studied. This work demonstrates that MAPLE could be an alternative way for deposition of organic dyes for DSSC.

Nonlinear optical studies on 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid thin films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

Energy Technology Data Exchange (ETDEWEB)

Matei, Andreea [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Marinescu, Maria, E-mail: maria.marinescu@chimie.unibuc.ro [UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ion, Valentin; Mitu, Bogdana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Ionita, Iulian [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); Emandi, Ana [INFLPR - National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele RO-077125, Bucharest (Romania); UB - University of Bucharest, Faculty of Chemistry, 90-92 Şoseaua Panduri, Sector 5, RO-010184, Bucharest (Romania)

2016-06-30

Graphical abstract: - Highlights: • A newly synthesized ferrocene-derivative exhibits SHG potential. • Matrix-assisted pulsed laser evaporation is employed for thin film fabrication. • The optical properties of the films are investigated, presented and discussed. • At maximum laser output power, the SHG signal is strongly influenced by thin film thickness. - Abstract: We present results on a new, laboratory synthesized ferrocene-derivative, i.e. 4-(ferrocenylmethylimino)-2-hydroxy-benzoic acid. Thin films with controlled thickness are deposited by matrix-assisted pulsed laser evaporation (MAPLE), on quartz and silicon substrates, with the aim of evaluating the nonlinear optical properties for potential optoelectronic applications. Dimethyl sulfoxide was used as matrix, with 1% wt. concentration of the guest compound. The frozen target is irradiated by using a Nd:YAG laser (4ω/266 nm, 7 ns pulse duration, 10 Hz repetition rate), at low fluences ranging from 0.1 to 1 J/cm{sup 2}. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are used to probe the surface morphology of the films. Fourier transform infrared (FTIR) and Raman spectroscopy reveal similar structure of the thin film material when compared to the starting material. The optical properties of the thin films are investigated by spectroscopic-ellipsometry (SE), and the refractive index dependence with respect to temperature is studied. The second harmonic generation (SHG) potential is assessed by using a femtosecond Ti:sapphire laser (800 nm, 60–100 fs pulse duration, 80 MHz repetition rate), at 200 mW maximum output power, revealing that the SHG signal intensity is strongly influenced by the films’ thickness.

How to obtain a magnetic hard-soft architecture by pulsed laser deposition

International Nuclear Information System (INIS)

Fix, T; Trassin, M; Hassan, R Sayed; Schmerber, G; Viart, N; Meny, C; Colis, S; Dinia, A

2007-01-01

In spin valve type systems, one ferromagnetic electrode must be magnetically hard to act as a reference layer while the other electrode must be magnetically soft to act as a sensor or storage layer. This magnetic hard-soft architecture can usually be obtained by four different methods: the use of two ferromagnets with different coercive fields (here CoFe 2 and Ni 80 Fe 20 ), the use of an underlayer enhancing the coercive field of one of the two ferromagnets (here Ta and Ru), the use of a ferromagnet coupled to a ferrimagnet or antiferromagnet (here NiO/CoFe 2 and CoFe 2 O 4 /CoFe 2 ), or the use of an artificial antiferromagnet (here CoFe 2 /Ru/CoFe 2 ). We show that at least the first and the third methods seem to work with pulsed laser deposition in the thermodynamic conditions used

Epitaxial growth with pulsed deposition: Submonolayer scaling and Villain instability

DEFF Research Database (Denmark)

Hinnemann, Berit; Hinrichsen, H.; Wolf, D.E.

2003-01-01

It has been observed experimentally that under certain conditions, pulsed laser deposition (PLD) produces smoother surfaces than ordinary molecular beam epitaxy (MBE). So far, the mechanism leading to the improved quality of surfaces in PLD is not yet fully understood. In the present work, we...

Fabrication of TiNb{sub 2}O{sub 7} thin film electrodes for Li-ion micro-batteries by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Daramalla, V. [Materials Research Centre, Indian Institute of Science, Bengalore 560012 (India); Penki, Tirupathi Rao; Munichandraiah, N. [Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bengalore 560012 (India); Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bengalore 560012 (India)

2016-11-15

Graphical abstract: The TiNb{sub 2}O{sub 7} thin film electrodes as anode material in Li-ion rechargeable micro-batteries are successfully demonstrated. The pulsed laser deposited TiNb{sub 2}O{sub 7} thin film electrode delivers high discharge specific capacity of 143 μAh μm{sup −1} cm{sup −2} at 50 μA cm{sup −2} current density, with 92% coulombic efficiency. The thin films are very stable in crystal structure, with good fast reversible reaction at average Li-insertion voltage 1.65 V. - Highlights: • TiNb{sub 2}O{sub 7} thin films fabricated by pulsed laser deposition. • TiNb{sub 2}O{sub 7} as anode thin films demonstrated successfully. • High discharge specific capacity with 92% coulombic efficiency. • Excellent crystal stability and good reversible reaction. - Abstract: Pulsed laser deposited TiNb{sub 2}O{sub 7} thin films are demonstrated as anode materials in rechargeable Li-ion micro-batteries. The monoclinic and chemically pure TiNb{sub 2}O{sub 7} films in different morphologies were successfully deposited at 750 °C. The single phase formation was confirmed by grazing incident X-ray diffraction, micro-Raman spectroscopy, high resolution transmission electron microscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. The oxygen partial pressure during the deposition significantly influenced the properties of TiNb{sub 2}O{sub 7} films. The TiNb{sub 2}O{sub 7} thin films exhibited excellent stability with fast kinetics reversible reaction. The TiNb{sub 2}O{sub 7} films showed initial discharge specific capacity of 176, 143 μAh μm{sup −1} cm{sup −2} at 30, 50 μA cm{sup −2} current densities respectively with 92% coulombic efficiency in a non-aqueous electrolyte consisting of Li{sup +} ions. The high discharge specific capacity of TiNb{sub 2}O{sub 7} thin films may be attributed to nanometer grain size with high roughness which offers high surface area for Li-diffusion during charge and discharge

Structural modification of titanium surface by octacalcium phosphate via Pulsed Laser Deposition and chemical treatment

Directory of Open Access Journals (Sweden)

I.V. Smirnov

2017-06-01

Full Text Available In the present study, the Pulsed Laser Deposition (PLD technique was applied to coat titanium for orthopaedic and dental implant applications. Calcium carbonate (CC was used as starting coating material. The deposited CC films were transformed into octacalcium phosphate (OCP by chemical treatments. The results of X-ray diffraction (XRD, Raman, Fourier Transform Infrared Spectroscopy (FTIR and scanning electron microscopy (SEM studies revealed that the final OCP thin films are formed on the titanium surface. Human myofibroblasts from peripheral vessels and the primary bone marrow mesenchymal stromal cells (BMMSs were cultured on the investigated materials. It was shown that all the investigated samples had no short-term toxic effects on cells. The rate of division of myofibroblast cells growing on the surface and saturated BMMSs concentration for the OCP coating were about two times faster than of cells growing on the CC films.

Processing of C60 thin films by Matrix-Assisted Pulsed Laser Evaporation (MAPLE)

DEFF Research Database (Denmark)

Canulescu, Stela; Schou, Jørgen; Fæster, Søren

2011-01-01

Thin films of fullerenes (C60) were deposited onto silicon using matrix-assisted pulsed laser evaporation (MAPLE). The deposition was carried out from a frozen homogeneous dilute solution of C60 in anisole (0.67 wt%), and over a broad range of laser fluences, from 0.15 J/cm2 up to 3.9 J/cm2. MAPLE...

Laser-assisted deposition of thin C60 films

DEFF Research Database (Denmark)

Schou, Jørgen; Canulescu, Stela; Fæster, Søren

Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

Science.gov (United States)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure

Science.gov (United States)

Liu, Xiaohui; Xu, Meng; Zhang, Xijian; Wang, Weiguang; Feng, Xianjin; Song, Aimin

2018-03-01

Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09 Pa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)∥MgO (110) with Cu2O (001)∥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm2 v-1 s-1.

Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

Czech Academy of Sciences Publication Activity Database

Písařík, Petr; Jelínek, Miroslav; Kocourek, Tomáš; Zezulová, M.; Remsa, Jan; Jurek, Karel

2014-01-01

Roč. 117, č. 1 (2014), s. 83-88 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : diamond like carbon * chromium * contact angle * surface free energy * dual laser deposition * zeta potential Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

Effect of pulsed laser parameters on in-situ TiC synthesis in laser surface treatment

Science.gov (United States)

Hamedi, M. J.; Torkamany, M. J.; Sabbaghzadeh, J.

2011-04-01

Commercial titanium sheets pre-coated with 300-μm thick graphite layer were treated by employing a pulsed Nd:YAG laser in order to enhance surface properties such as wear and erosion resistance. Laser in-situ alloying method produced a composite layer by melting the titanium substrate and dissolution of graphite in the melt pool. Correlations between pulsed laser parameters, microstructure and microhardness of the synthesized composite coatings were investigated. Effects of pulse duration and overlapping factor on the microstructure and hardness of the alloyed layer were deduced from Vickers micro-indentation tests, XRD, SEM and metallographic analyses of cross sections of the generated layer. Results show that the composite cladding layer was constituted with TiC intermetallic phase between the titanium matrix in particle and dendrite forms. The dendritic morphology of composite layer was changed to cellular grain structure by increasing laser pulse duration and irradiated energy. High values of the measured hardness indicate that deposited titanium carbide increases in the conditions with more pulse duration and low process speed. This occurs due to more dissolution of carbon into liquid Ti by heat input increasing and positive influence of the Marangoni flow in the melted zone.

Intense isolated attosecond pulse generation from relativistic laser plasmas using few-cycle laser pulses

International Nuclear Information System (INIS)

Ma, Guangjin; Dallari, William; Borot, Antonin; Tsakiris, George D.; Veisz, Laszlo; Krausz, Ferenc; Yu, Wei

2015-01-01

We have performed a systematic study through particle-in-cell simulations to investigate the generation of attosecond pulse from relativistic laser plasmas when laser pulse duration approaches the few-cycle regime. A significant enhancement of attosecond pulse energy has been found to depend on laser pulse duration, carrier envelope phase, and plasma scale length. Based on the results obtained in this work, the potential of attaining isolated attosecond pulses with ∼100 μJ energy for photons >16 eV using state-of-the-art laser technology appears to be within reach

Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

KAUST Repository

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel; David, Adrian; Lin, Weinan; Wu, Tao

2014-01-01

The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our

Growth and characterization of polycrystalline Ge{sub 1-x}C{sub x} by reactive pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez, M.P., E-mail: mayrap@fisica.uh.cu [Instituto de Ciencia y Tecnologia de Materiales, Zapata y G, P.O. Box 10400, Universidad de La Habana (Cuba); Farias, M.H.; Castillon, F.F.; Diaz, Jesus A.; Avalos, M. [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Km 107 Carretera Tijuana-Ensenada, C.P. 22800 Ensenada, Baja California (Mexico); Ulloa, L. [Universidad de Guadalajara, (CUCEI) Blvd. Marcelino Garcia Barragan 1421, C.P. 44430 Guadalajara, Jalisco (Mexico); Gallegos, J.A.; Yee-Madeiros, H. [Escuela Superior de Fisica y Matematicas-IPN, UP' ALM' , Colonia Lindavista 07738 (Mexico)

2011-03-15

Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T{sub s}, on C incorporation to substitutional sites (x) in Ge{sub 1-x}C{sub x} was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 deg. C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T{sub s} of 350 deg. C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T{sub s} from 250 deg. C to 350 deg. C. At T{sub s} = 400 deg. C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T{sub s} being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T{sub s} plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.

Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2014-12-01

Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

Energy Technology Data Exchange (ETDEWEB)

White, C.W.; Aziz, M.J.

1985-10-01

The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (10/sup 8/ to 10/sup 10/ /sup 0/C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time.

Nanocomposite oxide thin films grown by pulsed energy beam deposition

International Nuclear Information System (INIS)

Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

2011-01-01

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

International Nuclear Information System (INIS)

Kotlyarchuk, B.; Savchuk, V.

2007-01-01

This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 10 3 Ωcm at room temperature. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

Science.gov (United States)

Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

1994-04-01

A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

Plasma interactions determine the composition in pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Chen, Jikun; Stender, Dieter; Conder, Kazimierz; Wokaun, Alexander; Schneider, Christof W.; Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Döbeli, Max [Laboratory of Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)

2014-09-15

Plasma chemistry and scattering strongly affect the congruent, elemental transfer during pulsed laser deposition of target metal species in an oxygen atmosphere. Studying the plasma properties of La{sub 0.6}Sr{sub 0.4}MnO{sub 3}, we demonstrate for as grown La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} films that a congruent transfer of metallic species is achieved in two pressure windows: ∼10{sup −3} mbar and ∼2 × 10{sup −1} mbar. In the intermediate pressure range, La{sub 0.6}Sr{sub 0.4}MnO{sub 3-δ} becomes cation deficient and simultaneously almost fully stoichiometric in oxygen. Important for thin film growth is the presence of negative atomic oxygen and under which conditions positive metal-oxygen ions are created in the plasma. This insight into the plasma chemistry shows why the pressure window to obtain films with a desired composition and crystalline structure is narrow and requires a careful adjustment of the process parameters.

Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, H.T.; Vu, Hung N.; Rijnders, Augustinus J.H.M.

2016-01-01

Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization

Hydroxyapatite coatings on titanium dioxide thin films prepared by pulsed laser deposition method

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Nakashima, Shouta; Kawazoe, Syuichi; Toma, Tetsuya

2006-01-01

Hydroxyapatite (HAp) coated on titanium dioxide (TiO 2 ) thin films has been developed to supplement the defects of both TiO 2 and HAp. Thin films have been prepared by pulsed laser deposition (PLD) method using HAp and HAp(10%) + TiO 2 targets. X-ray diffraction (XRD) shows that there are many small peaks of Ca 1 0(PO 4 ) 6 (OH) 2 crystal, and no impurity other than HAp is detected in HAp films prepared using pure HAp target. The composition ratio of the film was analyzed by X-ray photoelectron spectroscopy (XPS). HAp coatings on TiO 2 thin films have been prepared using HAp(10%) + TiO 2 targets. XRD and XPS measurements suggest that crystalline HAp + TiO 2 thin films are obtained by the PLD method using HAp(10%) + TiO 2 target

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Ultrashort Laser Pulse Phenomena

CERN Document Server

Diels, Jean-Claude

2006-01-01

Ultrashort Laser Pulse Phenomena, 2e serves as an introduction to the phenomena of ultra short laser pulses and describes how this technology can be used to examine problems in areas such as electromagnetism, optics, and quantum mechanics. Ultrashort Laser Pulse Phenomena combines theoretical backgrounds and experimental techniques and will serve as a manual on designing and constructing femtosecond (""faster than electronics"") systems or experiments from scratch. Beyond the simple optical system, the various sources of ultrashort pulses are presented, again with emphasis on the basic

Electron microscopy studies of octa-calcium phosphate thin films obtained by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Iliescu, Monica; Nelea, V.; Werckmann, J.; Mihailescu, I.N.; Socol, G.; Bigi, Adriana; Bracci, Barbara

2004-04-01

Octa-calcium phosphate (OCP), Ca{sub 8}(HPO{sub 4}){sub 2}(PO{sub 4}){sub 4}{center_dot}5H{sub 2}O, is present as transient compound in the precipitation of hydroxyapatite (HA) and biological apatites. Because of these characteristics, OCP plays a crucial role in the in-vivo mineralization of human bones and teeth. The use of OCP in developing new generations of bone prosthesis stands therefore for an innovative challenge. This paper reports studies of OCP structures grown in the form of thin films by pulsed laser deposition (PLD) with emphasis on electron microscopy investigations. OCP films were grown on etched Ti substrates, using an UV KrF* excimer laser source ({lambda}=248 nm, {tau}{>=}20 ns). Films were deposited in low-pressure (50 Pa) water vapors environment on substrates heated at 20-180 deg. C. We performed annealing treatments in water vapors and ambient pressure at substrate temperatures identical to those used during deposition. Comprehensive structural and morphological investigations were carried out with different based-electron microscopy procedures. Grazing incidence X-ray diffraction (GIXRD) and white light confocal microscopy were also applied to characterize the films. Ca/P atomic ratio of films was determined by energy dispersive X-ray spectrometry, electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The obtained films generally exhibit an amorphous structure, as evidenced by GIXRD. Nevertheless, cross-section transmission electron microscopy investigations provide supplementary information about the film characteristics and material crystallization in small domains. OCP nanoparticles coalesce and grow perpendicular to the substrate in a tree-like structure, comparable to a coral reef.

Dual purpose laser ablation-inductively coupled plasma mass spectrometry for pulsed laser deposition and diagnostics of thin film fabrication: preliminary study.

Science.gov (United States)

Azdejković, Mersida Janeva; van Elteren, Johannes Teun; Rozman, Kristina Zuzek; Jaćimović, Radojko; Sarantopoulou, Evangelia; Kobe, Spomenka; Cefalas, Alkiviadis Constantinos

2009-08-15

PLD (pulsed laser deposition) is an attractive technique to fabricate thin films with a stoichiometry reflecting that of the target material. Conventional PLD instruments are more or less black boxes in which PLD is performed virtually "blind", i.e. without having great control on the important PLD parameters. In this preliminary study, for the first time, a 213 nm Nd-YAG commercial laser ablation-inductively coupled plasma mass spectrometer (LA-ICPMS) intended for microanalysis work was used for PLD under atmospheric pressure and in and ex situ ICPMS analysis for diagnostics of the thin film fabrication process. A PLD demonstration experiment in a He atmosphere was performed with a Sm(13.8)Fe(82.2)Ta(4.0) target-Ta-coated silicon wafer substrate (contraption with defined geometry in the laser ablation chamber) to transfer the permanent magnetic properties of the target to the film. Although this paper is not dealing with the magnetic properties of the film, elemental analysis was applied as a means of depicting the PLD process. It was shown that in situ ICPMS monitoring of the ablation plume as a function of the laser fluence, beam diameter and repetition rate may be used to ensure the absence of large particles (normally having a stoichiometry somewhat different from the target). Furthermore, ex situ microanalysis of the deposited particles on the substrate, using the LA-ICPMS as an elemental mapping tool, allowed for the investigation of PLD parameters critical in the fabrication of a thin film with appropriate density, homogeneity and stoichiometry.

Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

2007-01-01

Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

Science.gov (United States)

He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

2010-09-01

We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition

International Nuclear Information System (INIS)

Li, Qiang; Wang, Yuyin; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

2014-01-01

We investigated the structural and magnetic properties of Zn 0.95 Mn 0.05 O films prepared on sapphire substrates by pulsed-laser deposition. Only low temperature ferromagnetism (Curie temperature lower than 50 K) was observed in Mn-doped samples, while pure ZnO film shows a typical paramagnetic behavior. Structural analyses indicate that the substitutional Mn 2+ ions play a significant role for the low temperature ferromagnetism. Lattice defects such as V O and V Zn were not proven to be effective factors for the origin of ferromagnetism in the films. The low temperature ferromagnetism might be interpreted as p–d hybridization from indirect coupling of Mn ions (Mn–O–Mn).

Fiber-integrated tungsten disulfide saturable absorber (mirror) for pulsed fiber lasers

Science.gov (United States)

Chen, Hao; Li, Irene Ling; Ruan, Shuangchen; Guo, Tuan; Yan, Peiguang

2016-08-01

We propose two schemes for achieving tungsten disulfide (WS2)-based saturable absorber (SA) and saturable absorber mirror (SAM). By utilizing the pulsed laser deposition method, we grow the WS2 film on microfiber to form an evanescent field interaction SA device. Incorporating this SA device into a common ring-cavity erbium-doped fiber (EDF) laser, stably passive mode-locking can be achieved with pulse duration of 395 fs and signal-to-noise ratio of 64 dB. We also produce a fiber tip integrated WS2-SAM by utilizing the magnetron sputtering technique (MST). This new type of SAM combines the WS2 layer as SA and gold mirror as high reflective mirror. By employing the WS2-SAM, we construct the linear-cavity EDF lasers, and achieve passive mode-locking operation with pulse duration of ˜1 ns and SNR of ˜61 dB. We further achieve stably passive Q-switching operation with pulse duration of ˜160 ns and pulse energy of 54.4 nJ. These fiber-integrated SAs and SAMs have merits of compactness and reliability, paving the way for the development of new photonic devices such as SAs for pulsed laser technology.

Ultrashort pulse laser technology laser sources and applications

CERN Document Server

Schrempel, Frank; Dausinger, Friedrich

2016-01-01

Ultrashort laser pulses with durations in the femtosecond range up to a few picoseconds provide a unique method for precise materials processing or medical applications. Paired with the recent developments in ultrashort pulse lasers, this technology is finding its way into various application fields. The book gives a comprehensive overview of the principles and applications of ultrashort pulse lasers, especially applied to medicine and production technology. Recent advances in laser technology are discussed in detail. This covers the development of reliable and cheap low power laser sources as well as high average power ultrashort pulse lasers for large scale manufacturing. The fundamentals of laser-matter-interaction as well as processing strategies and the required system technology are discussed for these laser sources with respect to precise materials processing. Finally, different applications within medicine, measurement technology or materials processing are highlighted.

Guiding of laser pulses in plasma waveguides created by linearly-polarized femtosecond laser pulses