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Sample records for pulsed dc magnetron

  1. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  2. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  3. Enhanced Colouration Efficiency of Pulsed DC Magnetron Sputtered WO3 Films Cycled in H2SO4 Electrolyte Solution

    Directory of Open Access Journals (Sweden)

    K. Punitha

    2014-01-01

    Full Text Available In the present investigation, we report on DC power and pulsing frequency induced changes in electrochromic properties of pulsed DC magnetron sputtered WO3 films by intercalating/deintercalating H+ ions from 0.1 M H2SO4 electrolyte solution. The observed efficient colouration ↔ bleaching mechanism of WO3 films confirms the effective electrochromic nature of the films associated with the electrochemical intercalation/deintercalation of H+ ions and electrons into WO3 lattice. The higher optical modulation was observed in the visible region of the optical transmittance spectra of colored and bleached WO3 films. The maximum coloration efficiency of 79 cm2/C was observed the first time for the film deposited at a DC power of 150 W and a pulsing frequency of 25 kHz.

  4. Photocatalytic Property of TiO2 Films Deposited by Pulsed DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Wenjie ZHANG; Shenglong ZHU; Ying LI; Fuhui WANG

    2004-01-01

    TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.

  5. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  6. The deposition of low temperature sputtered In{sub 2}O{sub 3} films using pulsed d.c magnetron sputtering from a powder target

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: fsreejit@umn.edu [Materials and Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT (United Kingdom); Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55414 (United States); Hill, Arthur E.; Pilkington, Richard D. [Materials and Physics Research Centre, University of Salford, The Crescent, Salford, M5 4WT (United Kingdom)

    2014-01-01

    Transparent conductive oxide layers are widely used in various applications such as solar cells, touch screen displays, heatable glasses, etc. This present work describes the deposition of transparent and conducting In{sub 2}O{sub 3} films from In{sub 2}O{sub 3} powdered targets using a pulsed d.c magnetron sputtering technique without additional substrate heating or substrate biasing. The films deposited at various oxygen concentrations were approximately 500 nm thick, were pin-hole free and well adhered to the glass substrates. The material characteristics of the films were analysed using X-ray diffraction, four point probe, hot probe, UV–vis spectroscopy, atomic force microscopy and profilometry. Structural and electrical analyses revealed that the films were crystalline and highly conductive when sputtered in the absence of oxygen but a dramatic change in resistivity was observed when oxygen was introduced during the deposition. Resistivity increased from 0.004 Ω cm (no oxygen) to 5 Ω cm with 10% oxygen. - Highlights: • In{sub 2}O{sub 3} films deposited using pulsed d.c magnetron sputtering (PdcMS). • Films deposited without the aid of any additional heating or substrate heating. • Single phase, conductive films deposited with PdcMS technique with no heating. • Low temperature techniques are important application in flexible solar cells. • The conductivity of the films controlled through oxygen flow during film growth.

  7. XANES and EXAFS study of the TiN Thin films grown by the pulsed DC sputtering technique assisted by balanced magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Duarte M, A.; Esparza P, H.; Gonzalez V, C. [Centro de Investigacion en Materiales Avanzados, S. C., Miguel de Cervantes 120, Complejo Industrial Chihuahua Chihuahua, Chih. 31109 (Mexico); Yocupicio, I. [Universidad de Sonora, Unidad Regional Sur Lazaro Cardenas No. 100 Col. Fco. Villa, Navojoa, Sonora (Mexico)

    2007-07-01

    A series of different Ti{sub x}N{sub y} thin films were grown by the DC-sputtering technique. The purpose for this work was to study through XAS interpretation, how the different amounts of N{sub 2} during growing thin TiN thin films, affects the stoichiometry of the TiN deposited. Also the results obtained determinate how to interpret the spectra to see the different valences of Ti in TiN, are working. The results were supported with the EXAFS and XANES analysis. This work concludes the adequate conditions for this experiment to obtain TiN as thin film by the DC sputtering assisted by pulsed balanced magnetron at room temperature and concludes which XANES spectra are the finger print for valences of Ti. (Author)

  8. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie [Dublin City University, Glasnevin, Dublin 9 (Ireland); Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Gahan, David, E-mail: david.gahan@impedans.com; Scullin, Paul; Doyle, James; Lennon, Jj; Hopkins, M. B. [Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17 (Ireland); Vijayaraghavan, Rajani K.; Daniels, Stephen [Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2016-04-15

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  9. Structure and properties of Al-doped ZnO transparent conductive thin-films prepared by asymmetric bipolar pulsed DC reactive magnetron sputtering.

    Science.gov (United States)

    Hsu, Fu-Yung; Chen, Tse-Hao; Peng, Kun-Cheng

    2009-07-01

    Transparent conductive thin-films of aluminum-doped zinc oxide (AZO) were deposited on STN-glass substrates by an asymmetric bipolar pulsed DC (ABPDC) reactive magnetron sputtering system. Two different alloys, Zn-1.6 wt% Al and Zn-3.0 wt% Al, were used as the sputtering targets. The films consist of columnar grains with a preferred orientation of c-axis. Strong crystal distortion and high density stacking faults were observed in high resolution TEM micrographs. The full-width at half-maximum (FWHM) of the (002) rocking curve has a close relationship with the resistivity of the films; the smaller the FWHM, the lower the resistivity. The lowest resistivity of 7.0 x 10(-4) omega-cm was obtained from the film deposited with Zn-1.6 wt% Al target at 200 degrees C.

  10. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    Science.gov (United States)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  11. High-rate low-temperature dc pulsed magnetron sputtering of photocatalytic TiO2films: the effect of repetition frequency

    Directory of Open Access Journals (Sweden)

    Strýhal Z

    2007-01-01

    Full Text Available AbstractThe article reports on low-temperature high-rate sputtering of hydrophilic transparent TiO2thin films using dc dual magnetron (DM sputtering in Ar + O2mixture on unheated glass substrates. The DM was operated in a bipolar asymmetric mode and was equipped with Ti(99.5 targets of 50 mm in diameter. The substrate surface temperature Tsurfmeasured by a thermostrip was less than 180 °C for all experiments. The effect of the repetition frequency frwas investigated in detail. It was found that the increase of frfrom 100 to 350 kHz leads to (a an improvement of the efficiency of the deposition process that results in a significant increase of the deposition rate aDof sputtered TiO2films and (b a decrease of peak pulse voltage and sustaining of the magnetron discharge at higher target power densities. It was demonstrated that several hundreds nm thick hydrophilic TiO2films can be sputtered on unheated glass substrates at aD = 80 nm/min, Tsurf < 180 °C when high value of fr = 350 kHz was used. Properties of a thin hydrophilic TiO2film deposited on a polycarbonate substrate are given.

  12. Analysis of the properties of functional titanium dioxide thin films deposited by pulsed DC magnetron sputtering with various O2:Ar ratios

    Science.gov (United States)

    Mazur, Michal

    2017-07-01

    For the purpose of thin film preparation, pulsed DC magnetron sputtering process was performed and various O2:Ar gas ratios were applied during deposition. Structural properties of thin films deposited with various sputtering atmospheres were determined based on the results of the x-ray diffraction method and Raman spectroscopy, which revealed that all coatings were nanocrystalline and had anatase or rutile structure. The surface morphology of the coatings were investigated with the aid of a scanning electron microscopy and atomic force microscopy. Surface properties were evaluated by x-ray photoelectron spectroscopy and wettability measurements. It was revealed that an increase of Ar amount in the sputtering gas atmosphere caused as a result an increase of thin film water contact angle and enhanced ability of the surface to adsorb water molecules and hydroxyl radicals. Optical properties evaluated on the basis of transmission and reflection measurements showed that all coatings were transparent in the visible wavelength range, but had different refractive index, porosity and packing density. The mechanical properties of the obtained coatings were determined on the basis of nanoindentation tests. Prepared TiO2 thin films had different surface, optical and mechanical properties depending on the gas atmosphere during deposition.

  13. Study of sterilization-treatment in pure and N- doped carbon thin films synthesized by inductively coupled plasma assisted pulsed-DC magnetron sputtering

    Science.gov (United States)

    Javid, Amjed; Kumar, Manish; Han, Jeon Geon

    2017-01-01

    Electrically-conductive nanocrystalline carbon films, having non-toxic and non-immunogenic characteristics, are promising candidates for reusable medical devices. Here, the pure and N- doped nanocrystalline carbon films are deposited by the assistance of inductively coupled plasma (ICP) in an unbalanced facing target pulsed-DC magnetron sputtering process. Through the optical emission spectroscopy study, the role of ICP assistance and N-doping on the reactive components/radicals during the synthesis is presented. The N-doping enhances the three fold bonding configurations by increasing the ionization and energies of the plasma species. Whereas, the ICP addition increases the plasma density to control the deposition rate and film structure. As a result, sputtering-throughput (deposition rate: 31-55 nm/min), electrical resistivity (4-72 Ωcm) and water contact angle (45.12°-54°) are significantly tailored. Electric transport study across the surface microchannel confirms the superiority of N-doped carbon films for sterilization stability over the undoped carbon films.

  14. Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

    Science.gov (United States)

    Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

    2015-04-01

    In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

  15. Effect of deposition angle on the structure and properties of pulsed-DC magnetron sputtered TiAlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, A.R., E-mail: akshath.shetty@epfl.c [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Cantoni, M. [Centre Interdisciplinaire De Microscopie Electronique (CIME), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland)

    2011-04-29

    This article reports the comparison of structure and properties of titanium aluminum nitride (TiAlN) films deposited onto Si(100) substrates under normal and oblique angle depositions using pulsed-DC magnetron sputtering. The substrate temperature was set at room temperature, 400 {sup o}C and 650 {sup o}C, and the bias was kept at 0, - 25, - 50, and - 80 V for both deposition angles. The surface and cross-section of the films were observed by scanning electron microscopy. It was found that as the deposition temperature increases, films deposited under normal incidence exhibit distinct faceted crystallites, whereas oblique angle deposited (OAD) films develop a kind of 'tiles of a roof' or 'stepwise structure', with no facetted crystallites. The OAD films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. As the substrate temperature was increased, the tilting of columns nearly approached the substrate normal. Both hardness and Young's modulus decreases when the flux angle was changed from {alpha} = 0{sup o} to 45{sup o} as measured by nanoindentation. This was attributed to the voids formed due to the shadowing effect. The crystallographic properties of these coatings were studied by {theta}-2{theta} scan and pole figure X-ray diffraction. Films deposited at {alpha} = 0{sup o} showed a mixed (111) and (200) out-of-plane orientation with random in-plane alignment. On the other hand, films deposited at {alpha} = 45{sup o} revealed an inclined texture with (111) orientation moving towards the incident flux direction and the (200) orientation approaching the substrate normal, showing substantial in-plane alignment.

  16. High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

    DEFF Research Database (Denmark)

    Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

    2016-01-01

    High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

  17. Effect of a Ga-doped ZnO thin film with a ZTO buffer layer fabricated by using pulsed DC magnetron sputter for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Woo; Lee, Kyung-Ju; Roh, Ji-Hyung; Park, On-Jeon; Kim, Hwan-Sun; Moon, Byung-Moo [Korea University, Seoul (Korea, Republic of); Ji, Min-Woo [Yonsei University, Seoul (Korea, Republic of)

    2014-08-15

    The electrical property of a Ga-doped ZnO(GZO) thin film is well known to be similar that of commercialized fluorine-doped tin oxide(FTO). However GZO is limited for use at high process temperatures for solar cells because of its unstable resistivity at temperatures above 300 .deg. C. A GZO thin film compared to zinc tin oxide(ZTO)-GZO multilayer can be used at high process temperatures. A GZO thin film was deposited on glass by using pulsed DC magnetron sputter. Then, a ZTO buffer layer was deposited on the GZO surface. During the deposition, the working pressure was 5 mTorr (Z-1 glass) and 1 mTorr (Z-2 glass). Dye-sensitized solar cells (DSSCs) were fabricated using Z-1, Z-2 and commercialized FTO glasses. Z-2 showed a conversion efficiency of 4.265%, which was enhanced by 0.399% compared to that of the DSSCs using FTO(3.784%). The conversion efficiency for Z-1 (3.889%) was a little higher than that of FTO. Thus, the ZTO-GZO electrode showed better characteristics than those obtained using the FTO electrode, which can be attributed to the reduced charge recombination and series resistance.

  18. The role of Ohmic heating in dc magnetron sputtering

    Science.gov (United States)

    Brenning, N.; Gudmundsson, J. T.; Lundin, D.; Minea, T.; Raadu, M. A.; Helmersson, U.

    2016-12-01

    Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The secondary electron emission yield {γ\\text{SE}} is identified as the key parameter determining the relative importance of the two processes. For a conventional 5 cm diameter planar dc magnetron, Ohmic heating is found to be more important than sheath energization for secondary electron emission yields below around 0.1.

  19. DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

    Directory of Open Access Journals (Sweden)

    A. P. Burmakov

    2012-01-01

    Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

  20. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Son, Myoungwoo [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Ham, Moon-Ho [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Woong [School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Surface-textured AZO films were achieved by combining PDMS method with wet etching. Black-Right-Pointing-Pointer The AZO film deposited at 230 Degree-Sign C by PDMS exhibited the best performance. Black-Right-Pointing-Pointer It is due to the higher plasma density supplied from PDMS system. Black-Right-Pointing-Pointer Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 Degree-Sign C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 Multiplication-Sign 10{sup -4} {Omega} cm with the carrier concentration of 1.65 Multiplication-Sign 10{sup 21} cm{sup -3} and Hall mobility of 11.3 cm{sup 2}/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  1. Simulation to Predict Target Erosion of Planar DC Magnetron

    Institute of Scientific and Technical Information of China (English)

    QIU Qingquan; LI Qingfu; SU Jingjing; JIAO Yu; FINLEY Jing

    2008-01-01

    Plasma properties in a planar DC magnetron system are simulated by a non-selfconsistent particle method in two dimensions.Through tracing the trajectories of the energetic electrons in the specified electric field and the magnetic field,and treating the collision process by Monte Carlo method,the spatial profile of ionization events can be obtained conveniently.Assuming that the ions speed up from the ionization points and bombard the target with the energy at these points,and according to the Yamamura/Tawara method,the target erosion can be predicted.The magnetic field is calculated by the finite element method,and the electric field is estimated according to the self-consistent simulation and measured results.The influence of the time step size on the target erosion profile is analysed first to find a proper step size.Then the influence of electric field estimated on the erosion profile is discussed.The erosion profile may become narrower if the sheath thickness is increased.Finally,considering the dynamic erosion process,the erosion profile may get wider over time for the magnetron with shunt bar.

  2. Substrate Frequency Effects on Cr x N Coatings Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    Obrosov, Aleksei; Naveed, Muhammad; Volinsky, Alex A.; Weiß, Sabine

    2016-11-01

    Controlled ion bombardment is a popular method to fabricate desirable coating structures and modify their properties. Substrate biasing at high frequencies is a possible technique, which allows higher ion density at the substrate compared with DC current bias. Moreover, high ion energy along with controlled adatom mobility would lead to improved coating growth. This paper focuses on a similar type of study, where effects of coating growth and properties of DC magnetron-sputtered chromium nitride (Cr x N) coatings at various substrate bias frequencies are discussed. Cr x N coatings were deposited by pulsed DC magnetron sputtering on Inconel 718 and (100) silicon substrates at 110, 160 and 280 kHz frequency at low duty cycle. Coating microstructure and morphology were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), scratch adhesion testing and nanoindentation. Results indicate a transformation of columnar into glassy structure of Cr x N coatings with the substrate bias frequency increase. This transformation is attributed to preferential formation of the Cr2N phase at high frequencies compared with CrN at low frequencies. Increase in frequency leads to an increase in deposition rate, which is believed to be due to increase in plasma ion density and energy of the incident adatoms. An increase in coating hardness along with decrease in elastic modulus was observed at high frequencies. Scratch tests show a slight increase in coating adhesion, whereas no clear increase in coating roughness can be found with the substrate bias frequency.

  3. Variable Power, Short Microwave Pulses Generation using a CW Magnetron

    Directory of Open Access Journals (Sweden)

    CIUPA, R.

    2011-05-01

    Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

  4. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  5. Production of carbon nanotubes by the magnetron DC sputtering method

    NARCIS (Netherlands)

    Antonenko, SV; Mal'tsev, SN

    2005-01-01

    Carbon films containing multiwall nanotubes were produced by the magnetron de sputtering method. A graphite disc with Y and Ni catalyst plates was used as a target. The structural and morphological properties of the films were investigated using a JEM 2000EXII transmission electron microscope. The f

  6. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  7. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...

  8. A novel DC Magnetron sputtering facility for space research and synchrotron radiation optics

    DEFF Research Database (Denmark)

    Hussain, A.M.; Christensen, Finn Erland; Pareschi, G.;

    1998-01-01

    A new DC magnetron sputtering facility has been build up at the Danish Space Research Institute (DSRI), specially designed to enable uniform coatings of large area curved optics, such as Wolter-I mirror optics used in space telescopes and curved optics used in synchrotron radiation facilities...

  9. Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

    Energy Technology Data Exchange (ETDEWEB)

    Ait Aissa, K.; Achour, A., E-mail: a_aminph@yahoo.fr; Camus, J.; Le Brizoual, L.; Jouan, P.-Y.; Djouadi, M.-A.

    2014-01-01

    Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar–N{sub 2} gas mixture, at different working pressures. The films were characterized using X-ray diffraction (XRD), profilometer and transmission electron microscopy (TEM). The effect of the sputtering pressure on the structure, the residual stress and the deposition rate of AlN films deposited by the two processes (dcMS and HiPIMS) was investigated. It was found that the deposition rate is always lower in HiPIMS compared to dcMS. The AlN films are textured along (002) direction in both cases of dcMS and HiPIMS as it is indicated by XRD measurements, with residual stresses which are more important in the case of films deposited by HiMIPS. These residual stresses decrease with the sputtering pressure increase, especially in the case of the films deposited by HiPIMS. TEM analyses have shown a local epitaxial growth of AlN on the Si substrate which would favour thermal evacuation improvement of AlN as thermal interface material. - Highlights: • Highly c-axis oriented AlN films were obtained. • dc magnetron sputtering and high power impulse magnetron sputtering (HiMIPS) were used. • Abrupt interface between AlN and silicon substrate was obtained by HiPIMS.

  10. Pulsed-DC DBD Plasma Actuators

    Science.gov (United States)

    Duong, Alan; McGowan, Ryan; Disser, Katherine; Corke, Thomas; Matlis, Eric

    2016-11-01

    A new powering system for dielectric barrier discharge (DBD) plasma actuators that utilizes a pulsed-DC waveform is presented. The plasma actuator arrangement is identical to most typical AC-DBD designs with staggered electrodes that are separated by a dielectric insulator. However instead of an AC voltage input to drive the actuator, the pulsed-DC utilizes a DC voltage source. The DC source is supplied to both electrodes, and remains constant in time for the exposed electrode. The DC source for the covered electrode is periodically grounded for very short instants and then allowed to rise to the source DC level. This process results in a plasma actuator body force that is significantly larger than that with an AC-DBD at the same voltages. The important characteristics used in optimizing the pulsed-DC plasma actuators are presented. Time-resolved velocity measurements near the actuator are further used to understand the underlying physics of its operation compared to the AC-DBD. Supported by NASA Glenn RC.

  11. Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

    Science.gov (United States)

    2015-04-03

    AFRL-RX-WP-JA-2015-0178 OPTICAL AND CHEMICAL PROPERTIES OF MIXED- VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE DC MAGNETRON...To) 06 May 2010 – 16 March 2015 4. TITLE AND SUBTITLE OPTICAL AND CHEMICAL PROPERTIES OF MIXED-VALENT RHENIUM OXIDE FILMS SYNTHESIZED BY REACTIVE ...DC MAGNETRON SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62102F 6. AUTHOR(S) (see

  12. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  13. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  14. Pulse-width modulated DC-DC power converters

    CERN Document Server

    Kazimierczuk, Marian K

    2008-01-01

    This book studies switch-mode power supplies (SMPS) in great detail. This type of converter changes an unregulated DC voltage into a high-frequency pulse-width modulated (PWM) voltage controlled by varying the duty cycle, then changes the PWM AC voltage to a regulated DC voltage at a high efficiency by rectification and filtering. Used to supply electronic circuits, this converter saves energy and space in the overall system. With concept-orientated explanations, this book offers state-of-the-art SMPS technology and promotes an understanding of the principle operations of PWM converters,

  15. Bismuth coatings deposited by the pulsed dc sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, M. F.; Olaya, J. J.; Alfonso, J. E., E-mail: jealfonsoo@unal.edu.co [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Ciencia de Materiales y Superficies, Carrera 45 No. 26-85, Edif. Uriel Gutierrez, Bogota D. C. (Colombia)

    2013-08-01

    In this work we present the results obtained from the deposition of nano-structured bismuth coatings through Dc pulsed unbalanced magnetron sputtering. The coatings were grown on two substrates: silicon and AISI steel 316 L. The microstructure of the Bi coatings grown on silicon and the corrosion resistance of the Bi coatings grown on AISI steel were evaluated. The microstructure was evaluated by X-ray diffraction and the corrosion resistance was characterized by means of polarization potentiodynamic and electrochemical impedance spectroscopy. Finally the morphology of the coatings was evaluated through scanning electronic microscopy. The X-ray diffraction analysis indicates that the coatings are polycrystalline; the corrosion resistance tests indicate that the films with better corrosion resistance were deposited at 40 khz. Scanning electron microscopy micrographs show that the coatings are grown as granular form. (Author)

  16. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prater, W.

    2004-11-04

    We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

  17. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com [Institute of Engineering & Technology, DAVV, Khandwa Road, Indore – 452 017 (India); Pandey, Nidhi; Behera, Layanta; Gupta, Mukul [UGC-DAE Consortium for Scientific Research, Khandwa Road, University Campus, Indore-452001 (India)

    2016-05-23

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  18. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    Science.gov (United States)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  19. The Structure and Properties of Pulsed dc Sputtered Nanocrystalline NbN Coatings for Proton Exchange Membrane Fuel Cell.

    Science.gov (United States)

    Chun, Sung-Yong

    2016-02-01

    Niobium nitride coatings for the surface modified proton exchange membrane fuel cells with various pulse parameters have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of niobium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that niobium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering.

  20. Use of Multiple DC Magnetron Deposition Sources for Uniform Coating of Large Areas (Preprint)

    Science.gov (United States)

    2009-06-01

    2005- 1 June 2009 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER FA9451-04-C-0067 DF297548 Use of multiple DC magnetron deposition sources for...thickness at some point on the substrate plane to yield a relative thickness distribution or it can be used to find the ratio Mlm which will be useful... Mlm of the material deposited in each area, is shown in columns 3 though 5, for the three sources.. For example, within the area from the center of the

  1. Determination of the deposition rate of DC magnetron sputtering in fabrication of X-ray supermirrors

    Institute of Scientific and Technical Information of China (English)

    Fengli Wang; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Wenjuan Wu; Shumin Zhang; Lingyan Chen

    2006-01-01

    @@ X-ray supermirror is a non-periodic multilayer structure,whose optical performance is greatly affected by the stability and accuracy of the deposition rate in the fabrication using the direct current (DC) magnetron sputtering.By considering the location-setting time of the substrate positioning above the sputtering target,the deposition rate can be accurately determined.Experimental results show that the optical performance of the supermirror is in agreement with the design aim,which indicates that the layer thickness is well controlled and coincides with the desired ones.

  2. Pulsed Power Generators For Two-section Lia Relativistic Magnetron Driver

    CERN Document Server

    Agafonov, A V; Pevchev, V P

    2004-01-01

    Two prototypes of pulsed power generators for a two-sectional LIA - specialized driver of a relativistic magnetron were constructed and tested. The driver for the double-sided powering of a relativistic magnetron consists of two identical sets of induction modules (two sections of LIA) with inner electrodes - vacuum adders connected to both sides of a coaxial magnetron. It provides the symmetric power flowing in a magnetron and a possibility of localising of the electron flow in magnetron interaction region. The first generator designed for a small-scale laboratory installation provides the output pulses of 100 ns in duration with voltage amplitude of 50 kV at repetition rate of 1 pps. The construction of the generator is based on the application of experimental capacitor banks designed as a pulse forming line with the next parameters: charging voltage - 80 kV, impedance - 1,7 Ohm, pulse duration - 80 ns at a matched load. The second generator was designed for 1 MV integrated LIA - magnetron system. It cons...

  3. Origin of the energetic ion beams at the substrate generated during high power pulsed magnetron sputtering of titanium

    CERN Document Server

    Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    High power pulsed magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering. The origin of these energetic ions in HiPIMS is still an open issue, which is unraveled by using three fast diagnostics: time resolved mass spectrometry with a temporal resolution of 2 $\\mu$s, phase resolved optical emission spectroscopy with 1 $\\mu$s and the rotating shutter experiment with a resolution of 50 $\\mu$s. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2-inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well in the energetic properties of Ar$^+$, Ar$^{2+}$, Ti$^+$ and Ti$^{2+}$ were observed. For discharges with highest peak power densities a high energetic group of Ti$^{+}$ and Ti$^{2+}$ could be identified. A cold group of ions is always present. It is found that hot ions are observed only, when the plasma enters the spokes regime, ...

  4. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  5. Nano-structured morphological features of pulsed direct current magnetron sputtered Mo films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.uk; Hill, Arthur E.; Pilkington, Richard D.

    2011-10-31

    Historically, molybdenum thin films have been used as the back contact for Cu(In,Ga)Se{sub 2} based solar cells and as such the properties of these layers play an important role in the overall cell structure. This paper describes the production of molybdenum films using pulsed d.c. magnetron sputtering from compressed molybdenum powder targets. The films were deposited at different substrate temperatures under constant power and constant current modes, and analysed using X-ray diffraction, scanning electron microscopy, atomic force microscopy and four point resistance probe. Mechanical strain and resistivity were found to decrease with substrate temperature together with a shift in the (110) crystallographic plane towards higher diffraction angles. All films were well adhered to the glass substrates irrespective of their high tensile strain. Surface morphology analysis revealed the presence of nano-structured stress relief patterns which can enhance the nucleation sites for subsequent CuInSe{sub 2} deposition. A high-resolution cross sectional image showed the columnar growth of the films. Surface roughness analysis revealed that roughness increased with increase in substrate temperature.

  6. The structure of Cu-Al films prepared by unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J.; Bell, A.J. [Czech Acad. of Sci., Prague (Czech Republic). Inst. of Phys.; Chepera, M.; Zeman, J. [Military Technical Institute, PO Box 574, 602 00 (Czech Republic)

    1997-11-25

    Recently, the formation of nanostructured and amorphous materials has been the focus of intense research owing to interest from a basic scientific point of view and their potential technological value. This paper reports on the variation in, and control of, the structure of Cu-Al films prepared in a state-of-the-art unbalanced DC magnetron sputtering system. The structure is shown to be considerably influenced by ion bombardment during growth with both the energy and ratio of impinging ions: arriving atoms playing dominant roles. In addition, the addition of different quantities of Al to the thin film is shown to have a dramatic impact on the structure. The conditions under which nanocrystalline Cu-Al films can be prepared are given. The films were deposited by the magnetron sputter ion plating (MSIP) process using negative substrate biases up to 1000 V and at different argon pressures down to 0.04 Pa. The structure of the films were determined from XRD analyses. An attempt to correlate obtained XRD spectra with the structure of the film is suggested. The resistivities of the films were measured using the four-point probe method, whilst the content of Al was determined from EDX measurements. (orig.) 15 refs.

  7. Current-pressure dependencies of dc magnetron discharge in inert gases

    Science.gov (United States)

    Serov, A. O.; Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.

    2016-11-01

    The current-pressure (I-P) characteristics of dc magnetron discharge in inert gases (Ar, Kr and Xe) for various constant discharge voltages were measured. Under certain conditions on I-P characteristic, the nonmonotonic region of local maximum followed by a minimum is observed. It is found that increasing mass of the working gas ions results in a shift of the local maximum to lower pressures. The spatial distribution of ions in the plasma was studied by optical emission spectroscopy. Transformation of the discharge spatial structure with pressure was observed. A qualitative model of the observed trends is presented. It takes into account the pressure dependence of the discharge spatial structure, the capturing of secondary electrons by the cathode and charge exchange effects.

  8. ITO films for antireflective and antistatic tube coatings prepared by d.c. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Loebl, H.P. [Philips Res. Labs., Aachen (Germany); Huppertz, M. [Philips Res. Labs., Aachen (Germany); Mergel, D. [University GH Essen, Fachbereich 7, Physik, D-45117, Essen (Germany)

    1996-07-01

    A reactive d.c. magnetron sputtering process with relatively high oxygen flow suitable for antireflective and antistatic (ARAS) coatings on display tubes is described. The sputtering conditions and their influence on optical, structural and electrical properties of indium tin oxide (ITO) films are discussed and compared with other ITO sputtering processes from a metallic target. Emphasis is placed on the relation between microstructure, defect structure and conductivity, and on the determination of the optimal process conditions for obtaining fine-grained films for optical applications that can withstand the 460 C heat treatment during tube assembly. As an example, a simple three-layer broadband ARAS coating is investigated, consisting of a transparent conductive ITO layer, a TiO{sub 2} layer and a SiO{sub 2} layer on top. (orig.)

  9. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  10. Operational limit of a planar DC magnetron cluster source due to target erosion

    Energy Technology Data Exchange (ETDEWEB)

    Rai, A. [University of Erlangen–Nuernberg, Institute of Science and Technology of Metals, Martensstrasse 5, D-91058 Erlangen (Germany); Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Bandelow, G., E-mail: gstoppa@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Ganeva, M. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald (Germany); Pipa, A.V. [Leibniz Institute for Plasma Science and Technology (INP Greifswald), Felix-Hausdorff-Str. 2, D-17489 Greifswald (Germany); Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald (Germany)

    2013-12-01

    The binary collision-based two dimensional SDTrimSP-2D model has been used to simulate the erosion process of a Cu target and its influence on the operational limit of a planar DC magnetron nanocluster source. The density of free metal atoms in the aggregation region influences the cluster formation and cluster intensity during the target lifetime. The density of the free metal atoms in the aggregation region can only be predicted by taking into account (i) the angular distribution of the sputtered flux from the primary target source and (ii) relative downwards shift of the primary source of sputtered atoms during the erosion process. It is shown that the flux of the sputtered atoms smoothly decreases with the target erosion.

  11. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Science.gov (United States)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  12. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  13. DC motor operation controlled from a DC/DC power converter in pulse mode with low duty cycle

    OpenAIRE

    Stefanov, Goce; Kukuseva, Maja; Citkuseva Dimitrovska, Biljana

    2016-01-01

    In this paper pulse mode of operation of DC motor controlled by DC/DC power converter is analyzed. DC motor operation with time intervals in which the motor operates without output load is of interest. In this mode it is possible the motor to restore energy. Also, in the paper are represented calculations for the amount of the restored energy in the pulse mode operation of the motor for different duty cycles.

  14. Effect of annealing temperature on the properties of pulsed magnetron sputtered nanocrystalline Ag:SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, A. Sivasankar [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Figueiredo, N.M. [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal); Cho, H.C.; Lee, K.S. [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Cavaleiro, A., E-mail: albano.cavaleiro@dem.uc.pt [SEG-CEMUC, Department of Mechanical Engineering, University of Coimbra, 3030-788 Coimbra (Portugal)

    2012-04-16

    Highlights: Black-Right-Pointing-Pointer The nanocrystalline Ag:SnO{sub 2} films were prepared by pulsed direct current magnetron sputtering. Black-Right-Pointing-Pointer After annealing, the homogeneity and smoothness of the films was improved. Black-Right-Pointing-Pointer The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV. Black-Right-Pointing-Pointer The low electrical resistivity of 0.007 {Omega} cm was obtained at annealing temperature of 500 Degree-Sign C. - Abstract: Ag doped SnO{sub 2} (Ag:SnO{sub 2}) films were prepared on glass substrates by pulsed dc magnetron sputtering. The effect of thermal annealing treatments on the physical properties of the films was investigated. Several analytical techniques such as X-ray diffraction, electron probe microanalysis, scanning electron microscopy, atomic force microscopy, four-point probe and double beam spectrophotometer were used to examine the changes in structural, compositional, surface morphology, electrical and optical properties. XRD results showed that the films were grown with (1 1 0) preferential orientation with an average grain size in the range from 4.8 to 8.9 nm. The smoothness of the films increased with annealing temperature. The films annealed at 500 Degree-Sign C presented an electrical resistivity of 0.007 {Omega} cm. The as deposited films exhibited the highest optical transmittance of 95% with band gap of 3.23 eV.

  15. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  16. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    Science.gov (United States)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  17. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Punitha, K. [Department of Physics, Alagappa University, Karaikudi 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630 004 (India)

    2014-03-21

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  18. Characterization of amorphous and nanocomposite Nb–Si–C thin films deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nedfors, Nils, E-mail: nils.nedfors@kemi.uu.se [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden); Tengstrand, Olof [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Flink, Axel [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Impact Coatings AB, Westmansgatan 29, SE-582-16 Linköping (Sweden); Eklund, Per; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Jansson, Ulf [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden)

    2013-10-31

    Two series of Nb–Si–C thin films of different composition have been deposited using DC magnetron sputtering. In the first series the carbon content was kept at about 55 at.% while the Si/Nb ratio was varied and in the second series the C/Nb ratio was varied instead while the Si content was kept at about 45 at.%. The microstructure is strongly dependent on Si content and Nb–Si–C films containing more than 25 at.% Si exhibit an amorphous structure as determined by X-ray diffraction. Transmission electron microscopy, however, induces crystallisation during analysis, thus obstructing a more detailed analysis of the amorphous structure. X-ray photo-electron spectroscopy suggests that the amorphous films consist of a mixture of chemical bonds such as Nb–Si, Nb–C, and Si–C. The addition of Si results in a hardness decrease from 22 GPa for the binary Nb–C film to 18 – 19 GPa for the Si-containing films, while film resistivity increases from 211 μΩcm to 3215 μΩcm. Comparison with recently published results on DC magnetron sputtered Zr–Si–C films, deposited in the same system using the same Ar-plasma pressure, bias, and a slightly lower substrate temperature (300 °C instead of 350 °C), shows that hardness is primarily dependent on the amount of Si–C bonds rather than type of transition metal. The reduced elastic modulus on the other hand shows a dependency on the type of transition metal for the films. These trends for the mechanical properties suggest that high wear resistant (high H/E and H{sup 3}/E{sup 2} ratio) Me–Si–C films can be achieved by appropriate choice of film composition and transition metal. - Highlights: • Si reduces crystallinity, amorphous structure for films containing > 25 at.% Si. • Electron beam induced crystallization during transmission electron microscopy. • Hardness and resistivity are primarily dependent on the relative amount of C–Si bonds.

  19. MgB{sub 2} superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

    Energy Technology Data Exchange (ETDEWEB)

    Okur, S. [Physics Department, Izmir Institute of Technology (Turkey)], E-mail: salihokur@iyte.edu.tr; Kalkanci, M. [Material Science Program, Izmir Institute of Technology (Turkey); Pat, S.; Ekem, N.; Akan, T. [Physics Department, Osmangazi University (Turkey); Balbag, Z. [Department of Science and Mathematics Education, Osmangazi University (Turkey); Musa, G. [Plasma and Radiation, National Institute for Physics of Laser (Romania); Tanoglu, M. [Mechanical Engineering Department, Izmir Institute of Technology (Turkey)

    2007-11-01

    In this work, we discuss fabrication and characterization of MgB{sub 2} thin films obtained by sequential deposition and annealing of sandwich like Mg/B/Mg thin films on glass substrates. Mg and B films were prepared using DC magnetron sputtering and thermionic vacuum arc techniques, respectively. The MgB{sub 2} thin films showed superconducting critical transition at 33 K after annealing at 650 deg. C.

  20. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    Science.gov (United States)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  1. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

    2015-07-01

    Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

  2. Electrical and optical properties of reactive DC magnetron sputtered silver oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Kumar Barik, Ullash; Srinivasan, S.; Nagendra, C.L.; Subrahmanyam, A

    2003-04-01

    Silver oxide thin films have been prepared on soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique using pure silver metal target; the oxygen flow rates have been varied in the range 0.00-2.01 sccm. The X-ray diffraction data on these films show a systematic change from metallic silver to silver (sub) oxides. The electrical resistivity increases with increasing oxygen flow. The films show a p-type behavior (by both Hall and Seebeck measurements) for the oxygen flow rates of 0.54, 1.09 and 1.43 sccm. The refractive index of the films (at 632.8 nm) decreases with increasing oxygen content and is in the range 1.167-1.145, whereas the p-type films show a higher refractive index (1.186-1.204). The work function of these silver oxide films has been measured by Kelvin Probe technique. The results, in specific, the p-type conductivity in the silver oxide films, have been explained on the basis of the theory of partial ionic charge proposed by Sanderson.

  3. Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Y. Ashok Kumar Reddy

    2012-12-01

    Full Text Available Nickel oxide (NiO thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique. Structural properties of NiO films showed polycrystalline nature with cubic structure along (220 orientation. The optical transmittance and band gap values of the films increased with increasing the oxygen partial pressure from 1 × 10 – 4 to 5 × 10 – 4 mbar and decreased on further increasing the oxygen partial pressure. Using Scanning Electron Microscopy (SEM, fine grains were observed at oxygen partial pressure of 5 × 10 – 4 mbar. The film resistivity decreases from 90.48 to 13.24 Ω cm with increase in oxygen partial pressure to 5 × 10 – 4 mbar and then increased on further increasing the oxygen partial pressure.

  4. Deposition of TiN/CrN hard superlattices by reactive d.c. magnetron sputtering

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2003-02-01

    Multilayer superlattice coatings of TiN/CrN were deposited on silicon substrates using a reactive d.c. magnetron sputtering process. Superlattice period, also known as modulation wavelength (), was controlled by controlling the dwell time of the substrate underneath Ti and Cr targets. X-ray diffraction (XRD), nanoindentation and atomic force microscopy (AFM) were used to characterize the films. The XRD data showed 1st and 2nd order satellite reflections along the principal reflection for films having 132 Å $\\geq \\Lambda \\geq$ 84 Å, thus confirming the formation of superlattice. The multilayer coatings exhibited hardness () as high as 3200 kg/mm2, which is 2 times the rule-of-mixtures value (i.e. $H_{TiN}$ = 2200 kg/mm2 and $H_{CrN}$ = 1000 kg/mm2). Detailed investigations on the effects of various process parameters indicated that hardness of the superlattice coatings was affected not only by modulation wavelength but also by nitrogen partial pressure and ion bombardment during deposition.

  5. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  6. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  7. Study on ZnO:Al (ZAO) films by DC reaction magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    裴志亮; 孙超; 谭明晖; 关德慧; 肖金泉; 黄荣芳; 闻立时

    2001-01-01

    The high quality ZnO: A1 films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen flow and Al-doping concentration during deposition of ZnO: Al films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:A1 semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity. scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size (as compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( ~ 5 × 10-4 Ωcm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively.

  8. Photoelectric properties of ITO thin films deposited by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Liu Wei; Cheng Shuying

    2011-01-01

    As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide (ITO) thin films were prepared on glass substrates by DC magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that,the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150 ℃, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150 ℃, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10-4 Ω.cm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

  9. CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

    KAUST Repository

    Wei, Binbin

    2016-12-29

    Supercapacitors have been becoming indispensable energy storage devices in micro-electromechanical systems and have been widely studied over the past few decades. Transition metal nitrides with excellent electrical conductivity and superior cycling stability are promising candidates as supercapacitor electrode materials. In this work, we report the fabrication of CrN thin films using reactive DC magnetron sputtering and further their applications for symmetric supercapacitors for the first time. The CrN thin film electrodes fabricated under the deposition pressure of 3.5 Pa show an areal specific capacitance of 12.8 mF cm at 1.0 mA cm and high cycling stability with 92.1% capacitance retention after 20 000 cycles in a 0.5 M HSO electrolyte. Furthermore, our developed CrN//CrN symmetric supercapacitor can deliver a high energy density of 8.2 mW h cm at the power density of 0.7 W cm along with outstanding cycling stability. Thus, the CrN thin films have great potential for application in supercapacitors and other energy storage systems.

  10. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    CERN Document Server

    Wang, Jie; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-01-01

    TiZrV film is mainly applied in the ultra-high vacuum pipe of storage ring. Thin film coatings of palladium which was added onto the TiZrV film to increase the service life of nonevaporable getters and enhance pumping speed for H2, was deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd film were about 0.42~1.3 nm and 8.5~18.25 nm respectively. It was found that the roughness of TiZrV films was small, about 2~4 nm, for Pd film it is large, about 17~19 nm. PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.

  11. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  12. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  13. Dependence of characteristics of LaB6 films on DC magnetron sputtering power

    Institute of Scientific and Technical Information of China (English)

    XU Jing; MIN Guang-hui; HU Li-jie; ZHAO Xiao-hua; YU Hua-shun

    2009-01-01

    Lanthanum hexaboride(LaB6) thin films were deposited on glass substrate by DC magnetron sputtering technology, and the AFM, XRD and scratch tests were used to characterize the deposited films. Influences of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness is below 4.3 nm. The LaB6 film shows the crystalline structure with the grain less than 100 nm. The XRD pattern identifies that the crystal structure of the films is in accordance with that of bulk LaB6, and the (100) crystal face is dominated. The average grain size decreases firstly and then increases with increasing power, and reaches the minimum of 40 nm when the sputtering power is 44 W. Moreover, the intensity of peaks in XRD pattern increases firstly and decreases afterward with increasing power. When the sputtering power is 50 W, the peak intensity reaches the maximum, showing an intense relationship between the power and crystal structures. The scratch test shows that interface bonding strength of the film/substrate is higher at the power of 44 W than the others, due to the formation of the nanosized crystals and their improved surface energy.

  14. Rapidly switched wettability of titania films deposited by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shirolkar, Mandar; Abyaneh, Majid Kazemian; Singh, Akanksha; Kulkarni, Sulabha [DST Unit on Nanoscience, Department of Physics, University of Pune (India); Tomer, Anju; Choudhary, Ram; Sathe, Vasant; Phase, Deodatta [UGC-DAE Consortium for Scientific Research Indore Centre, University Campus, Khandwa Road, Indore (India)], E-mail: skk@physics.unipune.ernet.in

    2008-08-07

    Rapid switching (5-15 minutes) in the wettability of titania (TiO{sub 2}) thin films in the anatase phase has been observed after UV irradiation. The film surface becomes superhydrophilic when exposed to UV radiation. The relationship between wettability, thickness and crystallinity of TiO{sub 2} films has been investigated. Amorphous and anatase TiO{sub 2} thin films have been deposited by varying the argon to oxygen gas ratio, using the reactive dc magnetron sputtering technique. It was found that the gas ratio primarily affects thickness, crystallinity, morphology and wettability of the films. The highest contact angle that has been reported so far, namely, 170 deg. -176 deg., has been observed for film thickness varying from 112-500 nm in the case of pristine anatase TiO{sub 2} films. On the other hand, amorphous films show a variation in the contact angle from 120 deg. to 140 deg. as the thickness varied from 70 to 145 nm. The deposition is extremely robust and has an ultralow hysteresis in the contact angle. The films exhibit a morphology similar to the lotus leaf and the water hyacinth.

  15. Growth characteristics of MoS2 coatings prepared by unbalanced bipolar DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Ji-hui; XIA Yang; E.Wieers; L.M.Stals; J.P.Celis

    2005-01-01

    MoS2 coatings were prepared by unbalanced bipolar DC magnetron sputtering under different argon pressures and for different deposition times, and the structure and morphology of MoS2 coatings were determined and observed respectively by X-ray diffractometry and scanning electron microscopy. The results show that at lower argon pressures of 0.15Pa and 0.40Pa, MoS2 coatings are formed with the (002) basal plane parallel to the surface, whereas the coating deposited at the argon pressure above 0.60Pa has the (002) basal plane perpendicular to the surface. Two stages can be classified for the formation of MoS2 coating. At the initial stage of coating formation, the (002) basal plane with S-Mo-S layer structure grows on the substrate whatever the argon pressure is. And then the coating under 0.40Pa argon pressure still grows with (002) laminate structure, but the coatings under 0.88Pa and 1.60Pa argon pressures turn to grow with the mixed basal and edge orientations. The morphology and structure of MoS2 coatings are highly related to their growth rate and the energy of sputtered particles.

  16. Economical hydrogen production by electrolysis using nano pulsed DC

    Directory of Open Access Journals (Sweden)

    Dharmaraj C.H, AdishKumar S.

    2012-01-01

    Full Text Available Hydrogen is an alternate renewable eco fuel. The environmental friendly hydrogen production method is electrolysis. The cost of electrical energy input is major role while fixing hydrogen cost in the conventional direct current Electrolysis. Using nano pulse DC input make the input power less and economical hydrogen production can be established. In this investigation, a lab scale electrolytic cell developed and 0.58 mL/sec hydrogen/oxygen output is obtained using conventional and nano pulsed DC. The result shows that the nano pulsed DC gives 96.8 % energy saving.

  17. The third type DC flow in pulse tube cryocooler

    Institute of Scientific and Technical Information of China (English)

    ZHOU Yuan; GU Chao; CAI HuiKun

    2009-01-01

    New phenomena discovered in the experimental research of the ultra-high frequency pulse tube cryo cooler were presented.The cause of the new phenomena was analyzed and the third type DC flow was discovered in the pulse tube cryocooler.The third type DC flow not only deteriorated cooling capacity but also led to temperature instability of the pulse tube cryocooler.From the fluid network theory and the simple regenerator model,the root of the third type DC flow was concisely investigated in theory.The asymmetric resistance of oscillating flow in pulse tube cryocooler was the key mechanism of the third type DC flow.Some suppression methods were briefly discussed.

  18. The third type DC flow in pulse tube cryocooler

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    New phenomena discovered in the experimental research of the ultra-high frequency pulse tube cryocooler were presented.The cause of the new phenomena was analyzed and the third type DC flow was discovered in the pulse tube cryocooler.The third type DC flow not only deteriorated cooling capacity but also led to temperature instability of the pulse tube cryocooler.From the fluid network theory and the simple regenerator model,the root of the third type DC flow was concisely investigated in theory. The asymmetric resistance of oscillating flow in pulse tube cryocooler was the key mechanism of the third type DC flow.Some suppression methods were briefly discussed.

  19. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Directory of Open Access Journals (Sweden)

    Morales-Hernández, Jorge

    2015-09-01

    Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

  20. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    Science.gov (United States)

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates.

  1. Cu-In-O composite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ye Fan [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Cai Xingmin, E-mail: caixm@szu.edu.c [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai Fuping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China); Jing Shouyong [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China); Zhang Dongping; Fan Ping; Liu Lijun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China)

    2011-02-01

    Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O{sub 2} flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. Transmittance of the films decreases with increase in O{sub 2} flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In{sub 2}O{sub 3} and CuO. The sheet resistance of the films decreases with increase in O{sub 2} flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In{sub 2}O{sub 3} and the conduction mechanism of Cu-In-O thin films is through O vacancy. -- Research Highlights: {yields}Cu-In-O composite thin films were fabricated by DC sputtering at room temperature. {yields}The films are made of rhombohedral In{sub 2}O{sub 3} and monoclinic CuO. {yields}The transmittance depends on the Cu content in the film. {yields}The direct optical band gap is around 4.1-4.4eV. {yields}The conducting mechanism is due to oxygen vacancy.

  2. Controlling DC-DC converters by chaos-based pulse width modulation to reduce EMI

    Energy Technology Data Exchange (ETDEWEB)

    Li Hong [Department of Mathematics and Computer Science, FernUniversitaet in Hagen, 58084 Hagen (Germany)], E-mail: hong.li@FernUni-Hagen.de; Zhang Bo [School of Electric Power, South China University of Technology, Guangzhou (China); Li Zhong; Halang, Wolfgang A. [Department of Mathematics and Computer Science, FernUniversitaet in Hagen, 58084 Hagen (Germany); Chen Guanrong [Department of Electronic Engineering, City University of Hong Kong, Hong Kong (China)

    2009-11-15

    In this paper, periodic and chaotic behaviors of DC-DC converters under certain parametric conditions are simulated, experimentally verified, and analyzed. Motivated by the work of J.H.B. Deane and D.C. Hamill in 1996, where chaotic phenomena are useful in suppressing electromagnetic interference (EMI) by adjusting the parameters of the DC-DC converter and making it operate in chaos, a chaos-based pulse width modulation (CPWM) is proposed to distribute the harmonics of the DC-DC converters continuously and evenly over a wide frequency range, thereby reducing the EMI. The output waves and spectral properties of the EMI are simulated and analyzed as the carrier frequency or amplitude changes with regard to different chaotic maps. Simulation and experimental results are given to illustrate the effectiveness of the proposed CPWM, which provides a good example of applying chaos theory in engineering practice.

  3. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    Science.gov (United States)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  4. Optical properties of thin films of mixed Ni–W oxide made by reactive DC magnetron sputtering

    OpenAIRE

    Valyukh, I.; Green, S.V.; Granqvist, C. G.; Niklasson, G. A.; Valyukh, S; Arwin, H.

    2011-01-01

    Thin films of NixW1-x oxides with x = 0.05, 0.19, 0.43 and 0.90 were studied. Films with thicknesses in the range 125-250 nm were deposited on silicon wafers at room temperature by reactive DC magnetron co-sputtering from targets of Ni and W. The films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopic ellipsometry (SE). XRD spectra and SEM micrographs showed that all films were amorphous and possessed a columnar structure. The ellipsometric...

  5. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  6. Laboratory manual for pulse-width modulated DC-DC power converters

    CERN Document Server

    Kazimierczuk, Marian K

    2015-01-01

    Designed to complement a range of power electronics study resources, this unique lab manual helps students to gain a deep understanding of the operation, modeling, analysis, design, and performance of pulse-width modulated (PWM) DC-DC power converters.  Exercises focus on three essential areas of power electronics: open-loop power stages; small-signal modeling, design of feedback loops and PWM DC-DC converter control schemes; and semiconductor devices such as silicon, silicon carbide and gallium nitride. Meeting the standards required by industrial employers, the lab manual combines program

  7. Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kusayanagi, Minehide; Uchida, Azusa; Oka, Nobuto; Jia, Junjun [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Nakamura, Shin-ichi [Center for Instrumental Analysis, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan)

    2014-03-31

    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn–Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 °C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10{sup −4} Ω cm, whereas this was reduced to 5.9 × 10{sup −4} Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. - Highlights: • Al-doped ZnO (AZO) films with AZO buffer layers were deposited. • Reactive dc unbalance magnetron sputtering with impedance control was used. • Insertion of a buffer layer can lead to a lower resistivity. • Insertion of a buffer layer improved the crystallinity of AZO films.

  8. Swarming Speed Control for DC Permanent Magnet Motor Drive via Pulse Width Modulation Technique and DC/DC Converter

    Directory of Open Access Journals (Sweden)

    A.S. Oshaba

    2013-05-01

    Full Text Available This study presents an approach for the speed control of a permanent magnet DC motor drive via Pulse Width Modulation (PWM technique and a DC/DC converter. The Particle Swarm Optimization (PSO technique is used to minimize a time domain objective function and obtain the optimal controller parameters. The performance of the proposed technique has been evaluated using various types of disturbances including load torque variations. Simulation results illustrate clearly the robustness of the controller and validity of the design technique for controlling the speed of permanent magnet motors.

  9. Characterisation Studies of the Structure and Properties of As-Deposited and Annealed Pulsed Magnetron Sputtered Titania Coatings

    Directory of Open Access Journals (Sweden)

    John A. Ridealgh

    2013-09-01

    Full Text Available Titanium dioxide thin films are durable, chemically stable, have a high refractive index and good electro/photochemical proprieties. Consequently, they are widely used as anti-reflective layers in optical devices and large area glazing products, dielectric layers in microelectronic devices and photo catalytic layers in self-cleaning surfaces. Titania coatings may have amorphous or crystalline structures, where three crystalline phases of TiO2 can be obtained: anatase, rutile and brookite, although the latter is rarely found. It is known, however, that the structure of TiO2 coatings is sensitive to deposition conditions and can also be modified by post-deposition heat treatments. In this study, titania coatings have been deposited onto soda-lime glass substrates by reactive sputtering from a metallic target. The magnetron was driven in mid-frequency pulsed DC mode. The as-deposited coatings were analysed by micro Raman spectroscopy, X-ray diffraction (XRD, atomic force microscopy (AFM and scanning electron microscopy (SEM. Selected coatings were annealed at temperatures in the range 200–700 °C and re-analysed. Whilst there was weak evidence of a nanocrystallinity in the as-deposited films, it was observed that these largely amorphous low temperature structures converted into strongly crystalline structures at annealing temperatures above 400 °C.

  10. Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target.

    Science.gov (United States)

    Liao, Bo-Huei; Kuo, Chien-Cheng; Chen, Pin-Jen; Lee, Cheng-Chung

    2011-03-20

    Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5×10(-3) in the range from 400 to 800 nm when the CF4O2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63×10(-3) Ω cm) deposited at 300 °C was 27.9 times smaller than that of undoped SnO2 (4.55×10(-2) Ω cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68×10(-4) Ω cm, which increased by less than 39% at a 450 °C annealing temperature for 1 h in air.

  11. Economical hydrogen production by electrolysis using nano pulsed DC

    OpenAIRE

    Dharmaraj C.H, AdishKumar S.

    2012-01-01

    Hydrogen is an alternate renewable eco fuel. The environmental friendly hydrogen production method is electrolysis. The cost of electrical energy input is major role while fixing hydrogen cost in the conventional direct current Electrolysis. Using nano pulse DC input make the input power less and economical hydrogen production can be established. In this investigation, a lab scale electrolytic cell developed and 0.58 mL/sec hydrogen/oxygen output is obtained using conventional and nano pulsed...

  12. Pulse-Width-Modulating Driver for Brushless dc Motor

    Science.gov (United States)

    Salomon, Phil M.

    1991-01-01

    High-current pulse-width-modulating driver for brushless dc motor features optical coupling of timing signals from low-current control circuitry to high-current motor-driving circuitry. Provides high electrical isolation of motor-power supply, helping to prevent fast, high-current motor-driving pulses from being coupled through power supplies into control circuitry, where they interfere with low-current control signals.

  13. Plasma potential of a moving ionization zone in DC magnetron sputtering

    Science.gov (United States)

    Panjan, Matjaž; Anders, André

    2017-02-01

    Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the -Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

  14. Microstructure, mechanical properties and cutting performance of superhard (Ti,Si,Al)N nanocomposite films grown by d.c. reactive magnetron sputtering

    NARCIS (Netherlands)

    Carvalho, S; Ribeiro, E; Rebouta, L; Tavares, CJ; Mendonca, JP; Monteiro, AC; Carvalho, NJM; De Hosson, JTM; Cavaleiro, A

    2004-01-01

    This paper reports on the optimization of coating properties to improve the performance of tools in severe cutting conditions. Tungsten carbide tools coated with (Ti,Si,AI)N films deposited by d.c. reactive magnetron sputtering have been investigated. The structure and the hardness of the coated sam

  15. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A.; Barik, U.K. [Indian Institute of Technology Madras, Semiconductor Physics Laboratory, Department of Physics, Chennai (India)

    2006-07-15

    Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00-2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10{sup 0}-10{sup -3} {omega}cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver-indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13-1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). (orig.)

  16. Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-02-15

    Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

  17. Substrate Temperature Dependent Properties of Cu Doped NiO Films Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Yarraguntla Ashok Kumar Reddy; Akepati Sivasankar Reddy; Pamanji Sreedhara Reddy

    2013-01-01

    The NiO-Cu composite films were deposited on a glass substrate at various substrate temperatures by DC reactive magnetron sputtering technique.The effect of substrate temperature on the structural,optical,morphological and electrical properties of the films was mainly investigated.X-ray diffraction studies revealed that when the substrate temperature increased to above 200 C,the preferred orientation tended to move to another preferred site from (220) to (111) and had a stable cubic structure.The optical transmittance and band gap values increased with increasing substrate temperature.From the morphological studies,it was observed that the grain size and root mean square roughness were increased with increasing substrate temperature.The electrical resistivity of the film decreased to 0.017 Ω cm at high substrate temperature of 400 C.

  18. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  19. Room temperature DC magnetron sputtering deposition and field emission of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Fan; Cai, Xing-Min; Zhang, Dong-Ping; Fan, Ping; Liu, Li-Jun [School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technologies, Shenzhen University, Shenzhen 518060 (China); Dai, Fu-Ping [Department of Applied Physics, Northwestern Polytechnic University, Xian 710072 (China)

    2011-08-15

    Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O{sub 2}. X-ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E{sub 1} mode of ZnO. Seebeck effect shows that the films are n-type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    H.Q. Wang; H. Shen; D.C. Ba; B.W. Wang; L.S. Wen; D. Chen

    2005-01-01

    TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.

  1. Effects of oxygen partial pressure on optical properties of NiOX films deposited by reactive DC-magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying Zhou; Yongyou Geng; Donghong Gu

    2006-01-01

    The influence of oxygen partial pressure on the optical properties of NiOX thin films deposited by reactive DC-magnetron sputtering from a nickel metal target in a mixture gas of oxygen and argon was presented.With the oxygen ratio increasing, the reflectivity of the as-deposited films decreased, and optical band gap increased. Thermogravimetric analysis (TGA) showed that the decompose temperature of the films was above 250 ℃. After annealed at 400 ℃, only films deposited at 5% O2/Ar ratio showed high opticalcontrast which was about 52%. Scanning electron microscope (SEM) results revealed that the changes ofsurface morphology were responsible for the optical property variations of the films after annealing. Itsthermal stability and high optical contrast before and after annealing made it a good potential write-onceoptical recording medium.

  2. Structural and Optical Properties of Mg Doped ZnO Thin Films Deposited by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    A.Sh. Asvarov

    2016-11-01

    Full Text Available This paper reports the growth and characterization of transparent magnesium doped zinc oxide (ZnO:Mg thin films prepared on glass substrates by dc magnetron sputtering. The effects of the Mg concentrations (0, 1 and 5 at % and working gas compositions (pure Ar and Ar-O2 mixture on the structural and optical properties of the ZnO:Mg thin films were investigated. The experiment results showed that the ZnO and ZnO:Mg thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002 crystal plane orientation. The results indicated that the crystallinity of ZnO:Mg thin films was significantly affected by both Mg-doping and the woking gas composition. Optical studies revealed that the optical band gap increases with Mg concentration.

  3. Optoelectronic and electrochemical properties of nickel oxide (NiO) films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, B. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Mohamed Ibrahim, M. [Birla Institute of Technology and Science, Pilani, Dubai (United Arab Emirates); Senthilkumar, V. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Murali, K.R.; Vidhya, VS. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India); Sanjeeviraja, C. [School of Physics, Alagappa University, Karaikudi 630 003 (India); Jayachandran, M. [Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006 (India)], E-mail: jayam54@yahoo.com

    2008-11-30

    Nickel oxide (NiO) thin films were deposited onto glass substrates by the DC reactive magnetron sputtering technique. The as-deposited films were post-annealed in air at 450-500 deg. C for 5 h. The effect of annealing on the structural, microstructural, electrical and optical properties were studied by X-ray diffraction (XRD), atomic force microscope (AFM), four-probe resistivity measurement and UV-vis spectrophotometer. XRD studies indicated cubic structure with a lattice parameter of 0.4193 nm. The band gap of the films was found to be 3.58 eV. Fourier transform infrared (FTIR) studies indicated a broad spectrum centered at 451.6 cm{sup -1}. Photoluminescence studies exhibited room temperature emission at 440 nm. Cyclic voltammetry studies in 1 M KOH solution revealed the electrochromic nature of the NiO films prepared in the present study.

  4. Influence of temperature on the microstructure of V2O5 film prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    SU Qing; PAN Xiaojun; XIE Erqing; WANG Yinyue; QIU Jiawen; LIU Xueqin

    2006-01-01

    V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c -axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithiumor magnesium thin-film batteries.

  5. Bioactivity response of Ta{sub 1-x}O{sub x} coatings deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Almeida Alves, C.F., E-mail: cristiana.alves@fisica.uminho.pt [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal); Carvalho, S. [GRF-CFUM, Physics Departament, University of Minho, Campus of Azurem, Guimaraes 4800-058 (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, Coimbra 3030-788 (Portugal)

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft–hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar + O{sub 2} atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. - Highlights: • Ta{sub 1-x}O{sub x} coatings were deposited by reactive DC magnetron sputtering. • Amorphous oxide phases were achieved with higher oxygen amounts. • Contact angles progressively diminished, with increasing oxygen content. • Ta

  6. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Amreen A. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Pal, Arup R., E-mail: arpal@iasst.gov.in [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Kar, Rajib [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India); Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Patil, Dinkar S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India)

    2014-12-15

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO{sub 2}) nanocomposite thin films. The deposition of PPani-TiO{sub 2} nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO{sub 2} nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO{sub 2} nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H{sub 2}SO{sub 4} doping in PPani-TiO{sub 2} nanocomposite. • PPani-TiO{sub 2} nanocomposite based self-powered-hybrid photodetector.

  7. RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

    Science.gov (United States)

    Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

    2016-04-01

    The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

  8. Structural, electrical, and optical properties of diamondlike carbon films deposited by dc magnetron sputtering

    Science.gov (United States)

    Broitman, E.; Lindquist, O. P. A.; Hellgren, N.; Hultman, L.; Holloway, B. C.

    2003-11-01

    The electrical and optical properties of diamondlike carbon films deposited by direct current magnetron sputtering on Si substrates at room temperature have been measured as a function of the ion energy (Eion) and ion-to-carbon flux (Jion/JC). The results show that, in the ranges of 5 eV<=Eion<=85 eV and 1.1<=Jion/JC<=6.8, the presence of defective graphite formed by subplanted C and Ar atoms, voids, and the surface roughness, are the dominant influences on the resistivity and optical absorption.

  9. Downstream plasma transport and metal ionization in a high-powered pulsed-plasma magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Liang; Szott, Matthew M.; McLain, Jake T.; Ruzic, David N. [Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Yu, He [Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2014-06-14

    Downstream plasma transport and ionization processes in a high-powered pulsed-plasma magnetron were studied. The temporal evolution and spatial distribution of electron density (n{sub e}) and temperature (T{sub e}) were characterized with a 3D scanning triple Langmuir probe. Plasma expanded from the racetrack region into the downstream region, where a high n{sub e} peak was formed some time into the pulse-off period. The expansion speed and directionality towards the substrate increased with a stronger magnetic field (B), largely as a consequence of a larger potential drop in the bulk plasma region during a relatively slower sheath formation. The fraction of Cu ions in the deposition flux was measured on the substrate using a gridded energy analyzer. It increased with higher pulse voltage. With increased B field from 200 to 800 Gauss above racetrack, n{sub e} increased but the Cu ion fraction decreased from 42% to 16%. A comprehensive model was built, including the diffusion of as-sputtered Cu flux, the Cu ionization in the entire plasma region using the mapped n{sub e} and T{sub e} data, and ion extraction efficiency based on the measured plasma potential (V{sub p}) distribution. The calculations matched the measurements and indicated the main causes of lower Cu ion fractions in stronger B fields to be the lower T{sub e} and inefficient ion extraction in a larger pre-sheath potential.

  10. Optical transponder DC probe [for pulsed power generator

    CERN Document Server

    Thompson, M C

    1999-01-01

    The Atlas Pulse Power, Marx Bank will produce significant electromagnetic interference potential (EMI) via its 192 spark-gaps and trigger systems (36 more spark gaps). The authors have a need to measure DC charge components to a fair degree of accuracy during charge to ensure a safe and balanced system. Isolation from elevated- deck and/or high EMI environments during DC voltage or current measurement has classically been approached using frequency modulation (FM) of an imposed carrier on an optical fiber coupled system. There are shortcomings in most systems that can generally be compensated for by various means. In their application of remote sensing, the power to run this remote probe was a central issue. As such the authors took another approach to monitor the DC charge record for the Atlas' Marx banks. (0 refs).

  11. Enhancement of bioactivity of pulsed magnetron sputtered TiC{sub x}N{sub y} with bioactive glass (BAG) incorporated polycaprolactone (PCL) composite scaffold

    Energy Technology Data Exchange (ETDEWEB)

    Anusha Thampi, V.V.; Subramanian, B., E-mail: subramanianb3@gmail.com

    2015-11-15

    Titanium carbonitride (TiC{sub x}N{sub y}) thin films were fabricated on SS 316 L by pulsed reactive DC magnetron sputtering using titanium and graphite targets. The sputtered film was characterized microstructurally by X-ray diffraction (XRD) and Scanning electron microscopy (SEM). The XRD pattern revealed that the film was preferentially oriented along (200) axis with a grain size of 20 nm. A globular morphology was observed from electron micrograph while Energy dispersive X-ray spectroscopy (EDS) showed the compositional purity of the film. To improve the bioactivity, bioactive glass (BAG) nanopowders of size 60 nm, synthesized by sol–gel method, was incorporated into a polycaprolactone (PCL) scaffold (BAG-PCL), which was applied over TiC{sub x}N{sub y}/SS (BAG-PCL/TiCN/SS). In-vitro bioactivity studies of BAG-PCL showed the apatite formation, which was confirmed from fourier transform infrared (FTIR) spectrum and SEM. In-vitro corrosion studies in simulated body fluid (SBF) solution showed that the coated specimen had a higher charge transfer resistance than stainless steel (SS) bare. The enhancement of bioactivity was monitored by hemocompatibility and cytocompatibility, where an improved cell attachment and lower thrombus formation was observed for the coatings with BAG-PCL. - Highlights: • Fabrication of TiC{sub x}N{sub y} thin films on SS 316 L (TiCN/SS) by reactive pulsed DC magnetron sputtering. • Synthesis of BAG nanopowders (45S5) by sol–gel method. • Incorporation of BAG nanopowders into PCL matrix to form polymer composite scaffold. • BAG-PCL scaffold was coated on TiCN/SS to enhance the bioactivity.

  12. Ultrasensitive hydrogen sensor based on Pt-decorated WO₃ nanorods prepared by glancing-angle dc magnetron sputtering.

    Science.gov (United States)

    Horprathum, M; Srichaiyaperk, T; Samransuksamer, B; Wisitsoraat, A; Eiamchai, P; Limwichean, S; Chananonnawathorn, C; Aiempanakit, K; Nuntawong, N; Patthanasettakul, V; Oros, C; Porntheeraphat, S; Songsiriritthigul, P; Nakajima, H; Tuantranont, A; Chindaudom, P

    2014-12-24

    In this work, we report an ultrasensitive hydrogen (H2) sensor based on tungsten trioxide (WO3) nanorods decorated with platinum (Pt) nanoparticles. WO3 nanorods were fabricated by dc magnetron sputtering with a glancing angle deposition (GLAD) technique, and decorations of Pt nanoparticles were performed by normal dc sputtering on WO3 nanorods with varying deposition time from 2.5 to 15 s. Crystal structures, morphologies, and chemical information on Pt-decorated WO3 nanorods were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoelectron spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of WO3 nanorods was investigated over a low concentration range of 150-3000 ppm of H2 at 150-350 °C working temperatures. The results showed that the H2 response greatly increased with increasing Pt-deposition time up to 10 s but then substantially deteriorated as the deposition time increased further. The optimally decorated Pt-WO3 nanorod sensor exhibited an ultrahigh H2 response from 1530 and 214,000 to 150 and 3000 ppm of H2, respectively, at 200 °C. The outstanding gas-sensing properties may be attributed to the excellent dispersion of fine Pt nanoparticles on WO3 nanorods having a very large effective surface area, leading to highly effective spillover of molecular hydrogen through Pt nanoparticles onto the WO3 nanorod surface.

  13. Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering*

    Institute of Scientific and Technical Information of China (English)

    Zhang Huafu; Yang Shugang; Liu Hanfa; Yuan Changkun

    2011-01-01

    Tungsten-doped zinc oxide (ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature. The deposition pressure is varied from 12 to 21 Pa. The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation. The crystallinity, morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance,optical band gap as well as refractive index are not sensitive to deposition pressure. The deposited films with an electrical resistivity as low as 1.5 × 10-4 Ω·cm, sheet resistance of 6.8 Ω/□ and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

  14. Surface and Electrical Properties of NiCr Thin Films Prepared by DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jicheng; TIAN Li; YAN Jianwu

    2008-01-01

    Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer (EDX),Atomic Force Microscope (AFM) and four-point probe (FPP) to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.

  15. Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    De La Roche, J. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); González, J.M. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Restrepo-Parra, E., E-mail: erestrepop@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Alleh, V.; Scharf, T.W. [The University of North Texas, Department of Materials Science and Engineering, Denton, TX 76203 (United States)

    2014-11-30

    Highlights: • Ti-doped WS{sub 2} films were grown via the magnetron co-sputtering technique. • At a high Ti percentage, the crystalline structure of WS{sub 2} coatings tends to be amorphous. • As the Ti percentage increases in WS{sub 2} coatings, nanocomposites tend to form. • Ti-doped WS{sub 2} films have elastic behavior compared with the plastic response of pure WS{sub 2} films. • A high Ti percentage increases the corrosion resistance of WS{sub 2} films. - Abstract: Titanium-doped tungsten bisulfide thin films (WS{sub 2}-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS{sub 2} was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS{sub 2}. Using the scratch test, the coatings’ adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

  16. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  17. Time resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride

    CERN Document Server

    Mitschker, Felix; Benedikt, Jan; Maszl, Christian; von Keudell, Achim

    2013-01-01

    The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is measured with a temporal resolution of up to 25 us using a rotating shutter concept. According to that concept a 200 um slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and with x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviors with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and...

  18. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures,different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 ℃, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

  19. Extended metastable Al solubility in cubic VAlN by metal-ion bombardment during pulsed magnetron sputtering: film stress vs subplantation

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Ruess, H.; Hans, M.; Lu, J.; Hultman, L.; Schneider, J. M.

    2017-07-01

    Dynamic ion-recoil mixing of near-film-surface atomic layers is commonly used to increase the metastable solubility limit xmax in otherwise immiscible thin film systems during physical vapor deposition. Recently, Al subplantation achieved by irradiating the film growth surface with Al+ metal-ion flux was shown to result in an unprecedented xmax for VAlN, far above values obtained with gas ion irradiation. However, it is reasonable to assume that ion irradiation necessary for subplantation also leads to a compressive stress σ buildup. In order to separate the effects of Al+ bombardment on σ and xmax, and realize low-stress high-xmax nitride alloys, we grow metastable cubic V1-xAlxN (0.17 ≤ x ≤ 0.74) films using reactive magnetron sputtering under different ion irradiation conditions. Al and V targets are operated in Ar/N2 discharges employing (i) conventional DC (Ar+, N2+), (ii) hybrid High-power pulsed magnetron sputtering (HIPIMS)/DC processing with one type of metal ion present (Al+ or V+/V2+), and (iii) HIPIMS with concurrent Al+ and V+/V2+ fluxes. Comparison to the ab initio calculated Al solubility limit reveals that xmax = 0.55 achieved with V+/V2+ irradiation is entirely accountable for by stress. In contrast, Al+ fluxes provide a substantial increase in xmax to 0.63, which is 12% higher than that expected based on the stress-induced increase in metastable solubility. Correlative stress and atom probe tomography data confirm that the metastable Al solubility enhancement is enabled by Al+ subplantation. The here proposed processing strategy allows for growth of single-phase cubic nitride alloys with significantly increased Al concentrations embodying tremendous promise for substantial improvements in high temperature oxidation resistance and mitigates the risk of stress-induced adhesive or cohesive coating failure.

  20. A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering: Annealing Temperature Effect

    Institute of Scientific and Technical Information of China (English)

    Mati Horprathum; Pongpan Chindaudom; Pichet Limsuwan

    2007-01-01

    TiO2 thin Rims are obtained by dc reactive magnetron sputtering. A target of titanium (99.995%) and a mixture of argon and oxygen gases are used to deposit TiO2 films on to silicon wafers (100). The crystalline structure of deposited and annealed film are deduced by variable-angle spectroscopic ellipsometry (VASE) and supported by x-ray diffractometry. The optical properties of the Sims are examined by VASE. Measurements of ellipsometry are performed in the spectral range 0.72-3.55 eV at incident angle 75°. Several SE models, categorized by physical and optical models, are proposed based on the 'simpler better' rule and curve-fits, which are generated and compared to the experimental data using the regression analysis. It has been found that the triple-layer physical model together with the Cody-Lorentz dispersion model offer the most convincing result. The as-deposited films are found to be inhomogeneous and amorphous, whereas the annealed films present the phase transition to anatase and rutile structures. The refractive index of TiO2 thin films increases with annealing temperature. A more detailed analysis further reveals that thickness of the top sub-layer increases, whereas the region of the bottom amorphous sub-layer shrinks when the films are annealed at 300°C.

  1. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    Science.gov (United States)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  2. Fabrication and characterization of a Ni-Mn-Ga uniaxially textured freestanding film deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tillier, J., E-mail: jeremy.tillier@grenoble.cnrs.f [Institut Neel/Consortium de Recherche pour l' Emergence de Technologies Avancees, Centre National de la Recherche Scientifique, 25 avenue des Martyrs, BP166, 38042 Grenoble Cedex 9 (France); Bourgault, D.; Barbara, B.; Pairis, S.; Porcar, L.; Chometon, P.; Dufeu, D. [Institut Neel/Consortium de Recherche pour l' Emergence de Technologies Avancees, Centre National de la Recherche Scientifique, 25 avenue des Martyrs, BP166, 38042 Grenoble Cedex 9 (France); Caillault, N.; Carbone, L. [Schneider Electric France, 38TEC/T1, 37 quai Paul Louis Merlin, 38050 Grenoble Cedex 9 (France)

    2010-01-21

    Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-plane texture along the (0 2 2) direction. The stoichiometry of the annealed films is close to the target composition and leads to a martensitic transformation around 255 K. The annealed films demonstrate ferromagnetic behavior with a Curie temperature of about 362 K. The magnetization process has been studied on the both states and during the martensitic transition. The saturation magnetizations have been determined by fitting the experimental data with a saturation approach law in the range of 1-5 T. Results show the saturation magnetization of the martensite is around 10% higher than that of the austenite. A model based on intrinsic magnetic properties of each state allowing the description of the magnetization M = f(H, T) of such polycrystalline films during the martensitic transformation is presented. The mass fraction of martensite inside the austenite phase can be determined using this model. The shape memory effect is analyzed both by scanning electron microscopy and by optical microscopy with in situ measurement of the resistance temperature dependence.

  3. EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    P.Wu; F.P.Wang; L.Q.Pan; Y.Tian; H.Qiu

    2002-01-01

    Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.

  4. SWITCH MODE PULSE WIDTH MODULATED DC-DC CONVERTER WITH MULTIPLE POWER TRANSFORMERS

    DEFF Research Database (Denmark)

    2009-01-01

    A switch mode pulse width modulated DC-DC power converter comprises at least one first electronic circuit on a input side (1) and a second electronic circuit on a output side (2). The input side (1) and the output side (2) are coupled via at least two power transformers (T1, T2). Each power...... transformer (T1, T2) comprises a first winding (T1a, T2a) arranged in a input side converter stage (3, 4) on the input side (1) and a second winding (T1 b, T2b) arranged in a output side converter stage (5) on the output side (2), and each of the windings (T1a, T1 b, T2a, T2b) has a first end and a second end...

  5. [Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

    Science.gov (United States)

    Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

    2009-03-01

    Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

  6. Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO{sub 2}/TiWO{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan [Department of Electronic Engineering, National Quemoy University, 1 Daxue Road, Jinning Township, Kinmen 89250, Taiwan, ROC (China); Zhao, Yu-Xiang [Department of Computer Science and Information Engineering, National Quemoy University, Taiwan, ROC (China); Chang, Julian; Yang, Shu-Yi [Department of Applied English, National Quemoy University, Taiwan, ROC (China); Han, Sheng, E-mail: shenghan@nutc.edu.tw [Center for General Education, National Taichung University of Science and Technology, 129 San-min Road, Section 3, Taichung 40401, Taiwan, ROC (China)

    2016-08-15

    Highlights: • TiO{sub 2}/TiWO{sub x} films were fabricated by a bipolar pulsed magnetron sputtering apparatus. • Titanium oxide being sputtered tungsten enhanced the highly oriented of TiO{sub 2} (1 0 1) plane of the specimen assemblies. • The mechanism WO{sub 3}(h{sup +}, e{sup −})/TiO{sub 2}(h{sup +}, e{sup −}) → WO{sub 3}(e{sup −})/TiO{sub 2}(h{sup +}) shows the higher hydrophilicity and lower contact angle. - Abstract: Titanium oxide films were formed by sputtering and then TiWO{sub x} films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO{sub 2} (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole–electron recombination, enhancing hydrophilicity and reducing the contact angle.

  7. The role of target-to-substrate distance on the DC magnetron sputtered zirconia thin films' bioactivity

    Energy Technology Data Exchange (ETDEWEB)

    Thaveedeetrakul, Arisara [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand); Witit-anun, Nirun [Department of Physics, Burapha University, Chon Buri (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok (Thailand); Boonamnuayvitaya, Virote, E-mail: virote.boo@kmutt.ac.th [Department of Chemical Engineering, King Mongkut' s University of Technology Thonburi, Bangkok (Thailand)

    2012-01-15

    Zirconium dioxide thin films were deposited on 316L-stainless steel type substrates using DC unbalanced magnetron sputtering. The process parameter of this work was the target-to-substrate distance (d{sub t-s}), which was varied from 60 to 120 mm. The crystal structure and surface topography of zirconium dioxide thin films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results demonstrate that all of the ZrO{sub 2} thin films are composed monoclinic phase. The film sputtered at short d{sub t-s} (60 mm) shows a rather heterogeneous, uneven surface. The grain size, roughness, and thickness of thin films were decreased by increasing d{sub t-s}. The bioactivity was assessed by investigating the formation of hydroxyapatite (Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}) on the thin film surface soaked in simulated body fluids (SBF) for 7 days. XRD and scanning electron microscopy (SEM) were used to verify the formation of apatite layers on the samples. Bone-like apatites were formed on the surface of the ZrO{sub 2} thin film in SBF immersion experiments. A nanocrystalline hydroxyapatite (HA) with a particle size of 2-4 {mu}m was deposited. Higher crystallinity of HA on the surface was observed when the distance d{sub t-s} increased to more than 80 mm. Therefore, it seems that a d{sub t-s} greater than 80 mm is an important sputtering condition for inducing HA on the zirconia film.

  8. Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

    Science.gov (United States)

    Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

    2016-06-01

    High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

  9. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    Science.gov (United States)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  10. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    Institute of Scientific and Technical Information of China (English)

    谷锦华; 司嘉乐; 王九秀; 冯亚阳; 郜小勇; 卢景霄

    2015-01-01

    The indium–tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10−4Ω·m and average transmittance of 89%in the wavelength range of 380–780 nm were obtained under the optimized conditions:oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H.

  11. Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

    Science.gov (United States)

    Ward, Logan

    The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate

  12. Isolated PDM and PWM DC-AC SICAMs[Pulse Density Modulated; Pulse Width Modulated

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2004-03-15

    In this report a class of isolated PDM and PWM DC-AC SICAMs is described, which introduce the audio reference only in the output stage. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitor. Isolation from the AC mains is achieved using a high frequency (HF) transformer, receiving the HF voltage pulses from the input 'inverter' stage and transferring them to the output 'rectifier+inverter' stage, which can use either PDM or PWM. The latter stage is then interfaced to the load using an output low-pass filter. Each of the dedicated stages is discussed in detail. Measurements on the master/slave PWM DC-AC SICAM prototype are presented to help benchmarking the performance of this class of SICAMs and identify the advantages and drawbacks. (au)

  13. Effect of DC voltage pulses on memristor behavior.

    Energy Technology Data Exchange (ETDEWEB)

    Evans, Brian R.

    2013-10-01

    Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following pages outline the process that led to the hypothetical existence and eventual proof of this additional state of memristor behavior.

  14. Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

    Energy Technology Data Exchange (ETDEWEB)

    Sagdeo, P R; Shinde, D D; Misal, J S [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam -530012 (India); Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C, E-mail: nksahoo@barc.gov.i, E-mail: sahoonk@gmail.co [Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2010-02-03

    Titania-silica (TiO{sub 2}/SiO{sub 2}) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser ({lambda} = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

  15. High-T{sub c} DC SQUID system cooled by pulse-tube cooler

    Energy Technology Data Exchange (ETDEWEB)

    He, D.F.; Nakamura, M.; Yoshizawa, M

    2003-10-15

    We developed a high-T{sub c} DC SQUID system cooled by pulse-tube cooler. To avoid the influence of the wire resistance between SQUID and preamplifier, and to reduce the influence of the temperature fluctuation of pulse-tube cooler, DC coupling between SQUID chip and preamplifier was used and the flux locked loop worked in modulation mode. We also developed a temperature controller, using the DC SQUID as temperature sensor, to control and stabilize the operating temperature of the pulse-tube cooler. With the temperature controller, the DC SQUID system could remain locked for over 8 h.

  16. Blocking layer effect on dye-sensitized solar cells assembled with TiO2 nanorods prepared by dc reactive magnetron sputtering

    OpenAIRE

    Meng Lijian; Li Can

    2011-01-01

    Three different thickness dense TiO2 (150 nm, 300 nm and 450 nm respectively) films were deposited on ITO substrates by dc reactive magnetron sputtering technique. These dense TiO2 films were used as the blocking layers. After that, TiO2 nanorod films were deposited on these dense TiO2 films by same technique. Both the dense and nanorod TiO2 films have an anatase phase. The dense TiO2 films have an orientation along the [101] direction and the TiO2 nanorod films show a very strong orientation...

  17. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering

    OpenAIRE

    Fernandes, Filipe; Loureiro, A.; Polcar, Tomas; Cavaleiro, Albano

    2014-01-01

    FERNANDES, F. [et al.] - The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti–Si–V–N films deposited by DC reactive magnetron sputtering. "Applied Surface Science". ISSN 0169-4332. Vol. 289 (2014) p. 114-123 In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions ...

  18. Study of the mechanisms of flux enhancement through hairless mouse skin by pulsed DC iontophoresis

    Energy Technology Data Exchange (ETDEWEB)

    Pikal, M.J.; Shah, S. (Lilly Research Laboratories, Eli Lilly Co., Indianapolis, IN (USA))

    1991-03-01

    Enhanced iontophoretic transport using pulsed DC is usually explained by citing the observed decrease in skin resistance caused by an increase in AC pulse frequency at very small currents. Alternately, it has been suggested that the on-to-off nature of pulsed DC imparts an impact energy to the fluid, thereby increasing transport. This report provides a test of these mechanisms for enhanced delivery via pulsed iontophoresis. The DC resistance of hairless mouse skin during continuous and pulsed DC iontophoresis is measured as a function of time for selected pulse frequencies and duty cycles using current densities ranging from 0.1 to 1.0 mA/cm2. As a test of the impact energy mechanism, the iontophoretic transport of 14C-glucose measured with pulsed DC is compared with similar data obtained previously using continuous DC. It is suggested that pulsed current can yield lower resistance and enhanced drug delivery provided that (a) the steady-state current during the on phase of the pulse is very small and (b) the frequency is low enough to allow depolarization of the skin during the off phase of the pulse. The glucose transport results suggest that the impact energy concept does not apply to iontophoresis.

  19. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Department of Chemistry, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgy Engineering and Inorganic Chemistry, International Campus of Excellence of the Sea - CEI-MAR, University of Cadiz, Avda. República Saharaui s/n, 11510 Puerto Real, Cádiz (Spain); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Faculty of Engineering, Group of Materials and Chemical Processes, Universidad Nacional de Colombia, Av. Cra. 30 No 45-03, Bogotá (Colombia)

    2015-02-01

    Highlights: • New ZrO{sub x}N{sub y} films were deposited on stainless steel 316L using PSY-N and UBMS. • ZrO{sub x}N{sub y} rhombohedral polycrystalline film grew with PSY-N. • Zr{sub 2}ON{sub 2} crystalline structures, mostly oriented along the (2 2 2) plane, grew with UBMS. • Layers improved corrosion behavior in NaCl media, especially those deposited by UBMS. - Abstract: ZrO{sub x}N{sub y}/ZrO{sub 2} thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO{sub 2} was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrO{sub x}N{sub y} rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr{sub 2}ON{sub 2} crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride

  20. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marikkannan, M. [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai-625021 (India); Subramanian, M.; Tanemura, M. [Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mayandi, J., E-mail: pearce@mtu.edu, E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Tamil Nadu, Madurai-625021 (India); Department of Materials Science and Engineering, Michigan Technological University (United States); Vishnukanthan, V. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindern, N-0318 Oslo (Norway); Pearce, J. M., E-mail: pearce@mtu.edu, E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science and Engineering, Michigan Technological University (United States); Department of Electrical and Computer Engineering, Michigan Technological University (United States)

    2015-01-15

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H

  1. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    Directory of Open Access Journals (Sweden)

    M. Marikkannan

    2015-01-01

    Full Text Available Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar, oxygen (O2, hydrogen (H2 and nitrogen (N2 to enhance the electrical and optical performances of indium tin oxide (ITO films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD, atomic force microscopy (AFM, scanning electron microscopy (SEM, Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□ and increased optical transmittance (69% than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO

  2. Microstructural evolution of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

    NARCIS (Netherlands)

    Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; De Hosson, J. Th. M.; Bradley, J. W.; Voronin, S.; Cada, M.; DeHosson, JTM; Brebbia, CA; Nishida, SI

    2007-01-01

    The microstructure and property of magnetron Sputtered coatings are strongly affected by the intensity of concurrent ion impingement, in particular, by the energy distribution of impinging ions and the flux ratio between impinging ions and depositing atoms. In this paper, we report some striking res

  3. Design and Simulation of Dc-Dc Converter for Fuel Cell Operated Vehicle with Single Reference Six Pulse Modulation

    Directory of Open Access Journals (Sweden)

    1V.Chaitanya,P.G.scholar,

    2015-10-01

    Full Text Available : Even though electrical vehicle concept is introduced in early 1800’s, it gained importance in past couple of decades due to growing conscience on environmental aspects. Different types of electrical vehicles are manufactured in the past centuries and now onboard generation is seems to be promising by fulfilling the needs of a vehicle. Fuel cells or fuel cell stack produces typically 32-68V of EMF, which has to be conditioned before it fed to motor. The conditioning involves two stages DCDC conversion and then to DC-AC conversion .DC-AC conversion is done through inverter. For DC-DC to conversion various topologies are proposed such as fly back, forward, buck-boost are proposed. This paper deals with the front end DC-DC converter and inverter switching. A hybrid modulation scheme is used to produce pulses to switch the source end full bridge rectifier and inverter at load end. In this modulation scheme high frequency pulses given to full bridge rectifier and 33% modulation scheme based pulses are produced for inverter switching.

  4. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    WANG Hua-Lin; DING Wan-Yu; LIU Chao-Qian; CHAI Wei-Ping

    2010-01-01

    @@ Indium tin oxide(ITO)films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering.Varying O2 flux,ITO films with different properties are obtained.Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films,respectively.Electrical properties are measured by four-point probe measurements.The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux.With increasing O2flux,ITO films display better crystallization,which could decrease the resistivity of films.On the contrary,ITO films contain less O vacancies with increasing O2 flux,which could worsen the conductive properties of films.Without any heat treatment onto the samples,the resistivity of the ITO film could reach 6.0 × 10-4Ω·cm,with the optimai deposition parameter of 0.2 sccm O2 flux.

  5. Pulsed DC Electric Field-Induced Differentiation of Cortical Neural Precursor Cells.

    Directory of Open Access Journals (Sweden)

    Hui-Fang Chang

    Full Text Available We report the differentiation of neural stem and progenitor cells solely induced by direct current (DC pulses stimulation. Neural stem and progenitor cells in the adult mammalian brain are promising candidates for the development of therapeutic neuroregeneration strategies. The differentiation of neural stem and progenitor cells depends on various in vivo environmental factors, such as nerve growth factor and endogenous EF. In this study, we demonstrated that the morphologic and phenotypic changes of mouse neural stem and progenitor cells (mNPCs could be induced solely by exposure to square-wave DC pulses (magnitude 300 mV/mm at frequency of 100-Hz. The DC pulse stimulation was conducted for 48 h, and the morphologic changes of mNPCs were monitored continuously. The length of primary processes and the amount of branching significantly increased after stimulation by DC pulses for 48 h. After DC pulse treatment, the mNPCs differentiated into neurons, astrocytes, and oligodendrocytes simultaneously in stem cell maintenance medium. Our results suggest that simple DC pulse treatment could control the fate of NPCs. With further studies, DC pulses may be applied to manipulate NPC differentiation and may be used for the development of therapeutic strategies that employ NPCs to treat nervous system disorders.

  6. Pulsed DC Electric Field–Induced Differentiation of Cortical Neural Precursor Cells

    Science.gov (United States)

    Chang, Hui-Fang; Lee, Ying-Shan; Tang, Tang K.; Cheng, Ji-Yen

    2016-01-01

    We report the differentiation of neural stem and progenitor cells solely induced by direct current (DC) pulses stimulation. Neural stem and progenitor cells in the adult mammalian brain are promising candidates for the development of therapeutic neuroregeneration strategies. The differentiation of neural stem and progenitor cells depends on various in vivo environmental factors, such as nerve growth factor and endogenous EF. In this study, we demonstrated that the morphologic and phenotypic changes of mouse neural stem and progenitor cells (mNPCs) could be induced solely by exposure to square-wave DC pulses (magnitude 300 mV/mm at frequency of 100-Hz). The DC pulse stimulation was conducted for 48 h, and the morphologic changes of mNPCs were monitored continuously. The length of primary processes and the amount of branching significantly increased after stimulation by DC pulses for 48 h. After DC pulse treatment, the mNPCs differentiated into neurons, astrocytes, and oligodendrocytes simultaneously in stem cell maintenance medium. Our results suggest that simple DC pulse treatment could control the fate of NPCs. With further studies, DC pulses may be applied to manipulate NPC differentiation and may be used for the development of therapeutic strategies that employ NPCs to treat nervous system disorders. PMID:27352251

  7. Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current%直流电源耦合高功率脉冲非平衡磁控溅射电离特性

    Institute of Scientific and Technical Information of China (English)

    牟宗信; 牟晓东; 王春; 贾莉; 董闯

    2011-01-01

    采用直流电源放电形成高功率脉冲非平衡磁控溅射(dc-high power impulse unbalanced magnetron sputtering,dc-HPPUMS或dc-HiPiUMS),利用雪崩放电的击穿机理形成深度自触发放电,同轴线圈和空心阴极控制放电特性和提高功率密度.磁阱俘获雪崩放电形成的二次电子和形成漂移电流,形成了大电流脉冲放电,放电脉冲电流密度峰值超过100 A/cm2,脉冲频率小于40 Hz.由于放电等离子体远没有达到平衡状态,放电电流主要受到空间电荷效应的限制,采用放电理论分析了形成高电离率和强脉冲电流的机理,采用蔡尔德定律计算的放电参数符合实验的结果.%High Power impulse Unbalanced Magnetron Sputtering has been coupled to a direct current source (dc-HPPUMS or dc-HiPUMS). A coaxial coil and an attached hollow cathode were applied to control discharge properties and improve pulsed power density. A large extent breakdown was induced for avalanche discharge mechanism. The magnetic trap on sputtering target traps the secondary electrons excited by the avalanche and forms a drift current in magnetic trap. The peak pulse current density is higher than 100 A/cm2 with a pulse frequency less than 40 Hz. The space charge limited condition controls the discharge for plasma far away from equilibrium. The discharge theory was taken to describe the high ionization mechanism in dc-HPPUMS discharge. The parameters deduced from Child law agree with the experimental results.

  8. Magnetron theory

    Science.gov (United States)

    Riyopoulos, Spilios

    1996-03-01

    A guiding center fluid theory is applied to model steady-state, single mode, high-power magnetron operation. A hub of uniform, prescribed density, feeds the current spokes. The spoke charge follows from the continuity equation and the incompressibility of the guiding center flow. Included are the spoke self-fields (DC and AC), obtained by an expansion around the unperturbed (zero-spoke charge) flow in powers of ν/V1, ν, and V1 being the effective charge density and AC amplitude. The spoke current is obtained as a nonlinear function of the detuning from the synchronous (Buneman-Hartree, BH) voltage Vs; the spoke charge is included in the self-consistent definition of Vs. It is shown that there is a DC voltage region of width ‖V-Vs‖˜V1, where the spoke width is constant and the spoke current is simply proportional to the AC voltage. The magnetron characteristic curves are ``flat'' in that range, and are approximated by a linear expansion around Vs. The derived formulas differ from earlier results [J. F. Hull, in Cross Field Microwave Devices, edited by E. Okress (Academic, New York, 1961), pp. 496-527] in (a) there is no current cutoff at synchronism; the tube operates well below as well above the BH voltage; (b) the characteristics are single valued within the synchronous voltage range; (c) the hub top is not treated as virtual cathode; and (d) the hub density is not equal to the Brillouin density; comparisons with tube measurements show the best agreement for hub density near half the Brillouin density. It is also shown that at low space charge and low power the gain curve is symmetric relative to the voltage (frequency) detuning. While symmetry is broken at high-power/high space charge magnetron operation, the BH voltage remains between the current cutoff voltages.

  9. Pulse doubling in zigzag-connected autotransformer-based 12-pulse ac-dc converter for power quality improvement

    Science.gov (United States)

    Abdollahi, Rohollah

    2012-12-01

    This paper presents a pulse doubling technique in a 12-pulse ac-dc converter which supplies direct torque controlled motor drives (DTCIMDs) in order to have better power quality conditions at the point of common coupling. The proposed technique increases the number of rectification pulses without significant changes in the installations and yields in harmonic reduction in both ac and dc sides. The 12-pulse rectified output voltage is accomplished via two paralleled six-pulse acdc converters each of them consisting of three-phase diode bridge rectifiers. An autotransformer is designed to supply the rectifiers. The design procedure of magnetics is in a way such that makes it suitable for retrofit applications where a six-pulse diode bridge rectifier is being utilized. Independent operation of paralleled diode-bridge rectifiers, i.e. dc-ripple re-injection methodology, requires a Zero Sequence Blocking Transformer (ZSBT). Finally, a tapped interphase reactor is connected at the output of ZSBT to double the pulse numbers of output voltage up to 24 pulses. The aforementioned structure improves power quality criteria at ac mains and makes them consistent with the IEEE-519 standard requirements for varying loads. Furthermore, near unity power factor is obtained for a wide range of DTCIMD operation. A comparison is made between 6-pulse, 12-pulse, and proposed converters from view point of power quality indices. Results show that input current total harmonic distortion (THD) is less than 5% for the proposed topology at various loads.

  10. Pulse Width Modulator Controller Design for a Brushless DC Motor Position Servo.

    Science.gov (United States)

    1987-06-01

    performance. This thesis involves computer aided design of a functionally robust brushless dc motor position controller using pulse width modulation...Recent interest in positioning cruise missile flight control surfaces using electromechanical actuation has prompted a detailed study of brushless dc ... motor performance in such an application. While the superior response characteristics of these electronically commutated motors are particularly well

  11. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yuchen [State Key Lab for Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Zhou, Xue [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Electrical Engineering, Harbin Institute of Technology, Harbin 150000 (China); Liu, Jason X. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States); Anders, André, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  12. Enhancement of the crystalline Ge film growth by inductively coupled plasma-assisted pulsed DC sputtering.

    Science.gov (United States)

    Kim, Eunkyeom; Han, Seung-Hee

    2014-11-01

    The effect of pulsed DC sputtering on the crystalline growth of Ge thin film was investigated. Ge thin films were deposited on the glass substrates using ICP-assisted pulsed DC sputtering. The Ge target was sputtered using asymmetric bipolar pulsed DC sputtering system with and without assistance of ICP source. The pulse frequency of 200 Hz and the pulse on time of 500 μsec (duty cycle = 10%) were kept during sputtering process. Crystal structures were studied from X-ray diffraction. The X-ray diffraction patterns clearly showed crystalline film structures. The Ge thin films with randomly oriented crystalline were obtained using pulsed DC sputtering without ICP, whereas they had well aligned (220) orientation crystalline using ICP source. Moreover, the combination of ICP assistance and pulsed DC sputtering enhanced the growth of crystalline Ge thin films without hydrogen and metal by in situ deposition. The structure and lattice of the films were studied from TEM images. The cross-sectional TEM images revealed the deposited Ge films with columnar structure.

  13. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetron sputtering

    Science.gov (United States)

    Cheng, Bing; Yin, Yijun; Han, Jianqiang; Zhang, Jie

    2017-06-01

    The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips, such as thermal converters, should be less than several ppm/°C. However, the TCR of reported thin films is larger than 5 ppm/°C. In this paper, Ni24.9Cr72.5Si2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering. Then as-deposited films are annealed at 450 °C under different durations in N2 atmosphere. The sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20, 50, 100, 150, and 200 °C and then the TCR of thin films are calculated. Experimental results show that the film with the TCR of only -0.86 ppm/°C can be achieved by RF magnetron sputtering and appropriate annealing conditions. Project supported by the National Natural Science Foundation of China (Nos. 51377025, 61376114)

  14. Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.C., E-mail: ielinyc@cc.ncue.edu.tw; Wang, B.L.; Yen, W.T.; Shen, C.H.

    2011-06-01

    In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 x 10{sup -4} {Omega} cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 x 10{sup -3} {Omega} cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

  15. Influence of nitrogen admixture to argon on the ion energy distribution in reactive high power pulsed magnetron sputtering of chromium

    Science.gov (United States)

    Breilmann, W.; Maszl, C.; Hecimovic, A.; von Keudell, A.

    2017-04-01

    Reactive high power impulse magnetron sputtering (HiPIMS) of metals is of paramount importance for the deposition of various oxides, nitrides and carbides. The addition of a reactive gas such as nitrogen to an argon HiPIMS plasma with a metal target allows the formation of the corresponding metal nitride on the substrate. The addition of a reactive gas introduces new dynamics into the plasma process, such as hysteresis, target poisoning and the rarefaction of two different plasma gases. We investigate the dynamics for the deposition of chromium nitride by a reactive HiPIMS plasma using energy- and time-resolved ion mass spectrometry, fast camera measurements and temporal and spatially resolved optical emission spectroscopy. It is shown that the addition of nitrogen to the argon plasma gas significantly changes the appearance of the localized ionization zones, the so-called spokes, in HiPIMS plasmas. In addition, a very strong modulation of the metal ion flux within each HiPIMS pulse is observed, with the metal ion flux being strongly suppressed and the nitrogen molecular ion flux being strongly enhanced in the high current phase of the pulse. This behavior is explained by a stronger return effect of the sputtered metal ions in the dense plasma above the racetrack. This is best observed in a pure nitrogen plasma, because the ionization zones are mostly confined, implying a very high local plasma density and consequently also an efficient scattering process.

  16. DC drive system for cine/pulse cameras

    Science.gov (United States)

    Gerlach, R. H.; Sharpsteen, J. T.; Solheim, C. D.; Stoap, L. J.

    1977-01-01

    Camera-drive functions are separated mechanically into two groups which are driven by two separate dc brushless motors. First motor, a 90 deg stepper, drives rotating shutter; second electronically commutated motor drives claw and film transport. Shutter is made of one piece but has two openings for slow and fast exposures.

  17. Ionized sputter deposition using an extremely high plasma density pulsed magnetron discharge

    Energy Technology Data Exchange (ETDEWEB)

    Macak, Karol [Department of Physics, Linkoeping University, SE-581 83 Linkoeping, (Sweden); Kouznetsov, Vladimir [Department of Physics, Linkoeping University, SE-581 83 Linkoeping, (Sweden); Schneider, Jochen [Department of Physics, Linkoeping University, SE-581 83 Linkoeping, (Sweden); Helmersson, Ulf [Department of Physics, Linkoeping University, SE-581 83 Linkoeping, (Sweden); Petrov, Ivan [Materials Science Department and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

    2000-07-01

    Time resolved plasma probe measurements of a novel high power density pulsed plasma discharge are presented. Extreme peak power densities in the pulse (on the order of several kW cm{sup -2}) result in a very dense plasma with substrate ionic flux densities of up to 1 A cm{sup -2} at source-to-substrate distances of several cm and at a pressure of 0.13 Pa (1 mTorr). The pulse duration was {approx}100 {mu}s with a pulse repetition frequency of 50 Hz. The plasma consists of metallic and inert gas ions, as determined from time resolved Langmuir probe measurements and in situ optical emission spectroscopy data. It was found that the plasma composition at the beginning of the pulse was dominated by Ar ions. As time elapsed metal ions were detected and finally dominated the ion composition. The effect of the process parameters on the temporal development of the ionic fluxes is discussed. The ionized portion of the sputtered metal flux was found to have an average velocity of 2500 m s{sup -1} at 6 cm distance from the source, which conforms to the collisional cascade sputtering theory. The degree of ionization of the sputtered metal flux at a pressure of 0.13 Pa was found to be 40%{+-}20% by comparing the total flux of deposited atoms with the charge measured for the metal ions in the pulse. (c) 2000 American Vacuum Society.

  18. Plasma Sheet Actuator Driven by Repetitive Nanosecond Pulses with a Negative DC Component

    Institute of Scientific and Technical Information of China (English)

    宋慧敏; 张乔根; 李应红; 贾敏; 吴云; 梁华

    2012-01-01

    A type of electrical discharge called sliding discharge was developed to generate plasma aerodynamic actuation for flow control. A three-electrode plasma sheet actuator driven by repetitive nanosecond pulses with a negative DC component was used to generate sliding discharge, which can be called nanosecond-pulse sliding discharge. The phenomenology and behaviour of the plasma sheet actuator were investigated experimentally. Discharge morphology shows that the formation of nanosecond-pulse sliding discharge is dependent on the peak value of the repetitive nanosecond pulses and negative DC component applied on the plasma sheet actuator. Compared to dielectric barrier discharge (DBD), the extension of plasma in nanosecond-pulse sliding discharge is quasi-diffusive, stable, longer and more intensive. Test results of particle image velocimetry demonstrate that the negative DC component applied to a third electrode could significantly modify the topology of the flow induced by nanosecond-pulse DBD. Body force induced by the nanosecond-pulse sliding discharge can be approximately in the order of mN. Both the maximum velocity and the body force induced by sliding discharge increase significantly as compared to single DBD. Therefore, nanosecond-pulse sliding discharge is a preferable plasma aerodynamic actuation generation mode, which is very promising in the field of aerodynamics.

  19. Native target chemistry during reactive dc magnetron sputtering studied by ex-situ x-ray photoelectron spectroscopy

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2017-07-01

    We report x-ray photoelectron spectroscopy (XPS) analysis of native Ti target surface chemistry during magnetron sputtering in an Ar/N2 atmosphere. To avoid air exposure, the target is capped immediately after sputtering with a few-nm-thick Al overlayers; hence, information about the chemical state of target elements as a function of N2 partial pressure pN2 is preserved. Contrary to previous reports, which assume stoichiometric TiN formation, we present direct evidence, based on core-level XPS spectra and TRIDYN simulations, that the target surface is covered by TiNx with x varying in a wide range, from 0.27 to 1.18, depending on pN2. This has far-reaching consequences both for modelling of the reactive sputtering process and for everyday thin film growth where detailed knowledge of the target state is crucial.

  20. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Du Chang [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Wang Lin; Ning Chengyun [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N{sub 2} to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N{sub 2} to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  1. Determination of the electrically active Al fraction in Al doped ZnO grown by pulsed reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cornelius, Steffen; Vinnichenko, Mykola; Munnik, Frans; Heller, Rene; Kolitsch, Andreas; Moeller, Wolfhard [Helmholtz Zentrum Dresden-Rossendorf, Dresden (Germany)

    2011-07-01

    Al-doped ZnO (AZO) films which combine maximum carrier mobility, moderate free electron densities and high surface roughness are of special interest for application as transparent front electrode in thin film solar cells. They posses high transmission in the near infrared spectral range, close to the bandgap energy of absorber materials like Si (Eg=1.11 eV), and enable a superior light trapping behaviour. A key to tailor AZO film properties is understanding the mechanisms and effects of the Al-dopant incorporation into the ZnO matrix. It is well accepted that the mobilities in degenerately doped AZO are limited by ionized impurity scattering. A way to overcome this limitation would be to reduce the density of ionized impurities which either do not donate electrons themselves or compensate the Al donor. This is equivalent to increasing the fraction of electrically active Al in the ZnO host material. Systematic and quantitative information on this topic is still missing in literature. Therefore this work focuses on quantification of the Al concentration by ion beam analysis methods in conjuction with Hall-effect measurements for AZO films grown by reactive pulsed magnetron sputtering. The influence of parameters like target composition and substrate temperature on the Al activation is discussed.

  2. Hydroxyapatite thin films synthesized by pulsed laser deposition and magnetron sputtering on PMMA substrates for medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Socol, G. [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Macovei, A.M. [Institute of Biochemistry, Romanian Academy, Splaiul Independentei 296, 060031 Bucharest (Romania); Miroiu, F.; Stefan, N.; Duta, L.; Dorcioman, G. [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, Atomistilor Street 409, RO-77125 Magurele, Ilfov (Romania); Petrescu, S.M. [Institute of Biochemistry, Romanian Academy, Splaiul Independentei 296, 060031 Bucharest (Romania); Stan, G.E.; Marcov, D.A. [National Institute of Materials Physics, 105 bis Atomistilor Street, RO-77125 Bucharest-Magurele (Romania); Chiriac, A.; Poeata, I. [' Prof. Dr. N. Oblu' , Emergency Clinical Hospital, Neurosurgery Department, Ateneului Street, 3, 700309 Iasi (Romania)

    2010-05-25

    Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates - used as cranio-spinal implant-type structures - by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4-2.75 J/cm{sup 2}, pressures of 30-46.66 Pa and 10 Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3 Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4 J/cm{sup 2}, reduced pressure of water vapours and a 100 {sup o}C/4 h thermal treatment. For MS, the best results were obtained for 80% Ar + 20% O{sub 2} reactive atmosphere at low RF power ({approx}75 W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells.

  3. A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

    Science.gov (United States)

    Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

    2017-05-01

    A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

  4. Non-Thermionic Cathode for High Power Long Pulse, Long Lifetime Magnetrons

    Science.gov (United States)

    2010-11-18

    switched with an SCR. The coil produces a 3 kG magnetic field with a 20mS critically damped waveform. This is sufficient to allow flux penetration...that the conventional thermionic cathode doses not provide acceptable electron emission for operation in the HPM power levels (> 100Mw). In this work...TECHNICAL REPORT AFOSR CONTRACT: FA9550-09-C-0127 “Non- Thermionic Cathode for High Power Long Pulse, Long Lifetime Magnetrons” Miles Collins Clark

  5. Modelling of Magnetron Sputtering of Tungsten Oxide with Reactive Gas Pulsing

    OpenAIRE

    2007-01-01

    Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends ...

  6. Optical and chemical properties of mixed-valent rhenium oxide films synthesized by reactive DC magnetron sputtering

    Science.gov (United States)

    Murphy, Neil R.; Gallagher, Regina C.; Sun, Lirong; Jones, John G.; Grant, John T.

    2015-07-01

    Mixed-valent rhenium oxide thin films were deposited using reactive magnetron sputtering employing a metallic rhenium target within an oxygen-argon environment. The oxygen and argon flow rates were systematically varied, while the extinction coefficient, k, of the deposited layers was monitored using in situ spectroscopic ellipsometry. In situ monitoring was used to identify absorption features specific to ReO3, namely, the minimization of k brought on by the gap between interband absorption features in the UV at 310 nm and the onset of free electron absorption at wavelengths above 540 nm. Based on these results, oxygen flow ratios of 50% and 60% were shown to produce films having optical properties characteristic of ReO3, and thus, were selected for detailed ex situ characterization. Chemical analysis via X-ray photoelectron spectroscopy confirmed that all films consisted largely of ReO3, but had some contributions from Re2O3, ReO2 and Re2O7. Additional monitoring of the chemistry, as a function of environmental exposure time, indicated a correlation between structural instability and the presence of Re2O3 and Re2O7 in the films.

  7. Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

    Institute of Scientific and Technical Information of China (English)

    Fengping Wang; Ping Wu; Hong Qiu; Liqing Pan; Huanping Liu; Yue Tian; Sheng Luo

    2004-01-01

    Permalloy Ni8oFe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at wellcontrolled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about l×l0-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gradually in the growing film.As a result, the resistivity reduces apparently and magnetoresistance ratio increases markedly with raising substrate temperature.

  8. A comparison of reactive plasma pre-treatments on PET substrates by Cu and Ti pulsed-DC and HIPIMS discharges

    Energy Technology Data Exchange (ETDEWEB)

    Audronis, M., E-mail: m.audronis@yahoo.co.uk [Gencoa Ltd, Physics Road, Speke, Liverpool, L24 9HP (United Kingdom); Hinder, S.J. [The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH (United Kingdom); Mack, P. [ThermoFisher Scientific Ltd, Imberhorne Lane, East Grinstead, Sussex, RH19 1UB (United Kingdom); Bellido-Gonzalez, V. [Gencoa Ltd, Physics Road, Speke, Liverpool, L24 9HP (United Kingdom); Bussey, D.; Matthews, A. [Department of Engineering Materials, University of Sheffield, Sheffield S1 3JD (United Kingdom); Baker, M.A. [The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH (United Kingdom)

    2011-12-30

    PET web samples have been treated by magnetically enhanced glow discharges powered using either medium frequency pulse direct current (p-DC) or low frequency high power pulse (HIPIMS) sources. The plasma pre-treatment processes were carried out in an Ar-O{sub 2} atmosphere using either Cu or Ti sputter targets. XPS, AFM and sessile drop water contact angle measurements have been employed to examine changes in surface chemistry and morphology for different pre-treatment process parameters. Deposition of metal oxide onto the PET surface is observed as a result of the sputter magnetron-based glow discharge web treatment. Using the Cu target, both the p-DC and HIPIMS processes result in the formation of a thin CuO layer (with a thickness between 1 and 11 nm) being deposited onto the PET surface. Employing the Ti target, both p-DC and HIPIMS processes give rise to a much lower concentration of Ti (< 5 at.%), in the form of TiO{sub 2} on the PET treated surface. The TiO{sub 2} is probably distributed as an island-like distribution covering the PET surface. Presence of Cu and Ti oxide constituents on the treated PET is beneficial in aiding the adhesion but alone (i.e. without oxygen plasma activation) is not enough to provide very high levels of hydrophilicity as is clear from sessile drop water contact angle measurements on aged samples. Exposure to the plasma treatments leads to a small amount of roughening of the substrate surface, but the average surface roughness in all cases is below 2.5 nm. The PET structure at the interface with a coating is mostly or wholly preserved. The oxygen plasma treatment, metal oxide deposition and surface roughening resulting from the HIPIMS and p-DC treatments will promote adhesion to any subsequent thin film that is deposited immediately following the plasma treatment.

  9. Microstructural characterizations and hardness evaluation of d.c. reactive magnetron sputtered CrN thin films on stainless steel substrate

    Indian Academy of Sciences (India)

    Hetal N Shah; Vipin Chawla; R Jayaganthan; Davinder Kaur

    2010-04-01

    Chromium nitride (CrN) thin films were deposited on stainless steel (grade: SA304) substrate by using d.c. reactive magnetron sputtering and the influence of process parameters such as substrate temperature, pressure, and power on their microstructural characteristics were investigated in the present work. The CrN films were characterized with X-ray diffraction (XRD) to reveal the formation of different phases and its texture. The films showed the (111) preferred orientation but its intensity decreased, while intensity of peak (200) increased with increase in working pressure. The mixture of CrN and Cr2N phases were identified at low working pressure and temperature. The preferred orientations of CrN thin films are strongly influenced by sputtering conditions, thickness, and the induced residual stress in the films as observed in the present work. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize the morphology and surface topography of thin films, respectively. The study shows that the hardness of films strongly depends on the grain size and the film density, which are influenced by combined effect of the working pressure, temperature, and power of the sputtering process.

  10. Influence of heat treatment on the structural, morphological and optical properties of DC magnetron sputtered Ti$_{x}$Si$_{1−x}$O$_2$ films

    Indian Academy of Sciences (India)

    SURESH ADDEPALLI; UTHANNA SUDA

    2016-06-01

    Ti$_x$Si$_{1−x}$O$_2$ thin films were formed onto unheated p-silicon and quartz substrates by sputtering composite target of Ti80Si20 using reactive DC magnetron sputtering method. The as-deposited films were annealed in oxygenatmosphere at different temperatures in the range 400–900$^{\\circ}$C. X-ray photoelectron spectroscopic indicated that the as-deposited films formed at oxygen flow rate of 8 sccm were of Ti$_{0.7}$Si$_{0.3}$O$_2$. X-ray diffraction studies revealed that the as-deposited films were amorphous. The films annealed at 800$^{\\circ}$C were exhibited broad (101) peak which indicated the growth of nanocrystalline with anatase phase of TiO$_2$. The crystallite size of the films increased from 9 to 12 nm with increase of annealing temperature from 800 to 900$^{\\circ}$C, respectively, due to increase in crystallinity and decrease in defect density. XPS spectra of annealed films showed the characteristic core level binding energies of the constituent Ti$_{0.7}$Si$_{0.3}$O$_2$. Optical band gap decreased from 4.08 to 3.95 eV and the refractive index decreased from 2.11 to 2.08 in the as-deposited and the films annealed at 900$^{\\circ}$C due to decrease in the lattice strain and dislocation density.

  11. Tribological Testing, Analysis and Characterization of D.C. Magnetron Sputtered Ti-Nb-N Thin Film Coatings on Stainless Steel

    Science.gov (United States)

    Joshi, Prathmesh

    To enhance the surface properties of stainless steel, the substrate was coated with a 1μm thick coating of Ti-Nb-N by reactive DC magnetron sputtering at different N2 flow rates, substrate biasing and Nb-Ti ratio. The characterization of the coated samples was performed by the following techniques: hardness by Knoop micro-hardness tester, phase analysis by X-ray Diffraction (XRD), compositional analysis by Energy Dispersive X-ray Spectroscopy (EDS) and adhesion by scratch test. The tribology testing was performed on linearly reciprocating ball-on-plate wear testing machine and wear depth and wear volume were evaluated by white light interferometer. The micro-hardness test yielded appreciable enhancement in the surface hardness with the highest value being 1450 HK. Presence of three prominent phases namely NbN, Nb2N3 and TiN resulted from the XRD analysis. EDS analysis revealed the presence of Ti, Nb and Nitrogen. Adhesion was evaluated on the basis of critical loads for cohesive (Lc1) and adhesive (Lc2) failures with values varying between 7-12 N and 16-25 N respectively, during scratch test for coatings on SS substrates.

  12. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Subrahmanyam, A. [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)]. E-mail: manu@iitm.ac.in; Barik, Ullash Kumar [Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2007-03-15

    Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.

  13. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    JI Zhen-guo; LIU Fang; HE Hai-yan; HAN Wei-zhi

    2009-01-01

    Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures,respectively.Hall effect measurement,field-emission SEM,X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented,and have an average transmittance ~85% in the visible region.Na-doped p-type ZnO films with good structural,electrical,and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature.At the optimal condition,the Na-doped p-type ZnO has the lowest resistivity of 13.8Ω· cm with the carrier concentration as high as 1.07×10~(18) cm~(-3).The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

  14. Electrochromic properties of NiOx:H films deposited by DC magnetron sputtering for ITO/NiOx:H/ZrO2/WO3/ITO device

    Science.gov (United States)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhou, Yuliang; Wu, Zhonghou; Wang, Mei; Liu, Famin; Diao, Xungang

    2015-12-01

    NiOx:H thin films were deposited on ITO-coated glass by DC reactive magnetron sputtering at room temperature. The effects of the hydrogen content on the structure, morphologies, electrochemical properties, the stoichiometry and chemical states of NiOx:H thin films were systematically studied. In X-ray diffraction and atomic force microscopy analysis, the crystallinity of the films tends to be weakened when the flow amount ratio of Ar:O2:H2 equals 19:1:3 and as confirmed in electrochemical analysis, such relatively weak crystallinity is the main contributing factor to ion transportation. X-ray photoelectron spectroscopy reveals that the increase of the hydrogen contents results in a relatively lower binding energy exhibited in the Ni 2p spectra. The proportion of Ni2O3 in NiOx:H films increases from 22% at bleached state to 33% at colored state. A monolithic all-thin-film inorganic electrochromic device was fabricated with complementary configuration as ITO/NiOx:H/ZrO2/WO3/ITO. The electrochromic device with optimized NiOx:H thin films acting both as ion storage layer and proton-providing source displays high modulation efficiency of 68% at a fixed wavelength 550 nm.

  15. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in [Functional Nanomaterial Research lab, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India)

    2016-05-06

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  16. Structural and optical properties of a-Si{sub 1-x}C{sub x}:H films synthesized by dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Keffous, Aissa, E-mail: keffousa@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Cheriet, Abdelhak; Belkacem, Youcef; Gabouze, Noureddine; Boukezzata, Assia; Boukennous, Yacine [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Brighet, Amer; Cherfi, Rabah; Kechouane, Mohamed [Houari Boumediene Science and Technology University (USTHB), Physics Faculty, Algiers (Algeria); Guerbous, Lakhdar [Algerian Nuclear Research Center (CRNA), Algiers (Algeria); Menous, Isa; Menari, Hamid [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria)

    2010-05-01

    Hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si{sub 1-x}C{sub x}:H film was realized under a mixture of argon and hydrogen gases. The a-Si{sub 1-x}C{sub x}:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si{sub 0.80}C{sub 0.20}:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si{sub 1-x}C{sub x}:H) has been investigated.

  17. Effect of substrate temperature on the arrangement of ultra-thin TiO{sub 2} films grown by a dc-magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bukauskas, Virginijus, E-mail: virgis@pfi.lt [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania); Kaciulis, Saulius; Mezzi, Alessio [Istituto per lo Studio dei Materiali Nanostrutturati, ISMN-CNR, P.O. Box 10, I-00015 Monterotondo Stazione, Roma (Italy); Mironas, Audružis; Niaura, Gediminas; Rudzikas, Matas; Šimkienė, Irena; Šetkus, Arūnas [Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)

    2015-06-30

    TiO{sub 2} films with a thickness between 3 and 10 nm are obtained by a dc-magnetron sputtering deposition in the reactive gas atmosphere and the properties of the films are investigated by the Raman spectroscopy, X-ray photoelectron spectroscopy and scanning probe microscopy. An influence of the deposition temperature and the post-growth annealing on the properties of the films is studied at the temperatures from 375 to 650 K. It is experimentally demonstrated that the crystalline structure can be identified by the Raman spectroscopy in the films with the thickness higher than 9 nm and annealed in the oxygen rich atmosphere for at least 2 h at about 630 K. It is proved that the changes in the film structure are not related to the changes in the chemical composition, the Ti state, and the stoichiometry of the films. Basing on the fractal analysis of topographical images, it is shown that the structural changes can be associated with the changes in the fractal dimension. These changes can be a quantitative characteristic of the structure for the films thinner than 10 nm. - Highlights: • TiO{sub 2} films (< 10 nm) with crystalline anatase and amorphous grains were investigated. • Amounts of the crystalline and amorphous grains depend on the substrate temperature. • Fractal dimension is used as an indicator of a crystalline–amorphous grain mixture.

  18. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    Science.gov (United States)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  19. Effect of N Concentration on Microstructure Evolution of the Nanostructured (Al, Ti, SiN Coatings Prepared by d.c. Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    L. Jakab-Farkas

    2009-12-01

    Full Text Available Nanostructured (Al, Ti, SiN thin film coatings were synthesized by d.c. reactive magnetron sputtering, performed in an Ar/N2 gas mixture from a planar rectangular Al:Ti:Si=50:25:25 alloyed target. The mass flow of N2 reactive gas was strictly controlled in sputtering process. Conventional transmission electron microscopy (TEM technique was used for microstructure investigation of the as deposited films. Cross-sectional cuts performed through the deposited films revealed distinct microstructure evolution for different samples. It was found that the variation of the reactive gas amount induced changes in film microstructure. The metallic AlTiSi film exhibited strong columnar growth with a crystalline structure. The addition of a small amount of nitrogen to the process gas leads to a crystallite refinement. Further increase of N concentration resulted in evolution of fine lamellae growth morphology consisting of hainlike pearls in a dendrite, clusters of very fine grains in close crystallographic orientation.

  20. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Science.gov (United States)

    Muthu Karuppasamy, K.; Subrahmanyam, A.

    2008-02-01

    In this investigation, vanadium doped tungsten oxide (V : WO3) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm2 C-1), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO3 thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO3 lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO3 with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO3 thin films show good promise in the low maintenance window application.

  1. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, K Muthu; Subrahmanyam, A [Semiconductor Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2008-02-07

    In this investigation, vanadium doped tungsten oxide (V : WO{sub 3}) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm{sup 2} C{sup -1}), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO{sub 3} thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO{sub 3} lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO{sub 3} with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO{sub 3} thin films show good promise in the low maintenance window application.

  2. Zigzag Connected Autotransformer-Based 24-pulse AC-DC Converter

    Science.gov (United States)

    Xiao-qiang, Chen; Hao, Qiu

    2015-02-01

    In this paper, a zigzag connected autotransformer-based 24-pulse AC-DC converter is designed, modeled and simulated to feed direct torque controlled induction motor drives. Winding arrangements and parameters of the autotransformer and interphase reactor are given. Moreover, the design procedure of the autotransformer is modified to make it suitable for retrofit applications. Simulation results indicate that the system is capable of eliminating up to 21st harmonics in the ac mains current. The effect of load variation and load character is also studied to demonstrate the performance and effectiveness of the proposed 24-pulse converters. A set of power quality indices at ac mains and dc side are presented to compare the performance of 6-, 12- and 24-pulse converters.

  3. Pulse, dc and ac breakdown in high pressure gas discharge lamps

    Science.gov (United States)

    Beckers, J.; Manders, F.; Aben, P. C. H.; Stoffels, W. W.; Haverlag, M.

    2008-07-01

    An optical study of pulse, dc, and ac (50-400 kHz) ignition of metal halide lamps has been performed by investigating intensified CCD camera images of the discharges. The ceramic lamp burners were filled with xenon gas at pressures of 300 and 700 mbar. In comparison with dc and pulse ignition, igniting with an ac voltage decreases the ignition voltage by up to 56% and the breakdown time scales get much longer (~10-3 s compared with ~10-7 s for pulse ignition). Increasing the ac frequency decreases the ignition voltages and changes the ionization channel shapes. External irradiation of UV light can have either an increasing or a decreasing effect on ignition voltages.

  4. Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Pryds, Nini;

    2010-01-01

    Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr–Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria concentration. Films deposited at fl...

  5. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    Energy Technology Data Exchange (ETDEWEB)

    Gudmundsson, J. T., E-mail: tumi@hi.is [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Lundin, D.; Minea, T. M. [Laboratoire de Physique des Gaz et Plasmas - LPGP, UMR 8578 CNRS, Université Paris-Sud, 91405 Orsay Cedex (France); Stancu, G. D. [CentraleSupélec, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); CNRS, UPR 288 Laboratoire EM2C, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Brenning, N. [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Plasma and Coatings Physics Division, IFM-Materials Physics, Linköping University, SE-581 83 Linköping (Sweden)

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  6. Synthesis and characterization of zirconium oxynitride ZrO{sub x}N{sub y} coatings deposited via unbalanced DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I., E-mail: gcubillos@unal.edu.co [Chemistry Department, College of Science, National University of Colombia, Bogotá (Colombia); Olaya, J.J., E-mail: jjolayaf@unal.edu.co [Department of Mechanical Engineering and Mechatronics, College of Engineering, National University of Colombia, Bogotá (Colombia); Bethencourt, M., E-mail: manuel.bethencourt@uca.es [Department of Materials Science, Metallurgical Engineering and Inorganic Chemistry, University of Cadiz, Marine Science and Technology Center of Andalucía, International Campus of Excellence of the Sea (CEI MAR), Avda. República de Saharaui, Puerto Real E-11510 (Spain); Antorrena, G., E-mail: ganto@unizar.es [Laboratorio de Microscopías Avanzadas (LMA) – Instituto de Nanociencia de Aragón (University of Zaragoza, Spain), 50009 Zaragoza (Spain); El Amrani, K., E-mail: khadija.elhanrani@uca.es [Department of Materials Science, Metallurgical Engineering and Inorganic Chemistry, Faculty of Marine Sciences, University of Cadiz, Avda. República de Saharaui, Puerto Real E-11510 (Spain)

    2013-08-15

    A study of structure, morphology, and corrosion resistance was performed on zirconium oxynitride thin films deposited on 304 and 316 stainless steels by the DC sputtering magnetron unbalance technique. Structural analysis was carried out using X-ray diffraction (XRD), while morphological analysis was performed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). These studies were performed as a function of deposition time via DC sputtering at room temperature (287 K) with an Ar/air flow ratio of 3.0 and a total deposition time of 30 min. The oxynitride films were grown with cubic crystalline structures Zr{sub 2}ON{sub 2} and preferentially oriented along the (222) plane. Chemical analysis determined that in the last 5.0 nm, the Zr coatings present the following spectral lines: Zr3d{sub 3/2} (184.6 eV) and 3d{sub 5/2} (181.7 eV), O1s (531.3 eV), and N1s (398.5 eV). The zirconium oxynitride films enhance the stainless steel's resistance to corrosion. The protective efficacy has been evaluated using electrochemical techniques based on linear polarizations (LP). The results indicate that the layer provides good resistance to corrosion in chloride-containing media. SEM analysis presented the homogeneity of the films. AFM studies indicated that the average roughness of the film is 20.2 nm in the two steels and a particle size ranging between 150 and 208 nm in ZrO{sub x}N{sub y}-AISI 316 and 115–180 in ZrO{sub x}N{sub y}-AISI 316. TEM analysis indicated columnar growth. - Highlights: • ZrO{sub 0.8}N{sub 0.2} coatings were deposited by DC sputtering using air as the reactive gas. • The ZrO{sub 0.8}N{sub 0.2} films grew in the cubic phase and preferentially oriented in plane (222). • A thin film of ZrO{sub 2} (c) promotes the growth of ZrO{sub 0.8}N{sub 0.2}. • The coating of ZrO{sub 2}/ZrO{sub 0.8}N{sub 0.2} increases the corrosion resistance of steel.

  7. DC link current simulation of voltage source inverter with random space vector pulse width modulation

    Directory of Open Access Journals (Sweden)

    Chen Guoqiang

    2016-01-01

    Full Text Available Aiming at analysis complexity, a simulation model is built and presented to analyze and demonstrate the characteristics of the direct current (DC link current of the three-phase two-level inverter with the random space vector pulse width modulation (SVPWM strategy. The developing procedure and key subsystems of the simulation model are given in detail. Several experiments are done using the simulation model. The results verify the efficiency and convenience of the simulation model and show that the random SVPWM scheme, especially the random switching frequency scheme, can efficiently suppress the harmonic peaks of the DC link current.

  8. Attaching single carbon nanotube on tip's apex using dielectrophoresis of DC-pulse voltage

    Institute of Scientific and Technical Information of China (English)

    Hee-Jin JEONG; Yoong-Ho JUNG; Deug-Woo LEE

    2009-01-01

    Single carbon nanotubes (CNTs) are candidates for a number of electronics and sensing applications, provided that single CNTs can be separated from a bundle of CNTs in suspension. Dielectrophoresis has recently been demonstrated as one route for the extraction of desired CNTs. However, previous methods using dielectrophoresis have found it difficult to extract single nanotubes from bundles of CNTs in solution. Here, we show that this restriction can be overcome by using pulsed DC voltage of an electric field, instead of regular AC and DC voltages.

  9. OH radicals generated by DC corona discharge for improving the pulsed discharge desulfuration efficiency

    Institute of Scientific and Technical Information of China (English)

    LI Jie; LI Guo-feng; WU Yan; WANG Ning-hui; HUANG Qiu-nan

    2004-01-01

    Positive DC corona discharge is formed with needle-plate electrode configuration, in which the water vapor is ejected though the needle points. The purpose is to increase the numbers of the water-based radicals, ionize the water molecule and improve the desulfuration efficiency of pulsed corona reactor. The water ions were determined by four stages molecular beam mass spectrometer and diagnose the water-based radicals by emission spectrograph. A conclusion on formation of ions and radicals with DC corona discharges can be drawn.

  10. Optical properties of nanocrystalline WO{sub 3} and WO{sub 3-x} thin films prepared by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Johansson, Malin B., E-mail: majo4400@gmail.com; Niklasson, Gunnar A.; Österlund, Lars, E-mail: lars.osterlund@angstrom.uu.se [Division of Solid State Physics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 Uppsala (Sweden); Zietz, Burkhard [Division of Physical Chemistry, Department of Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 523, SE-75120 Uppsala (Sweden)

    2014-06-07

    The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with different oxygen vacancy (V{sub o}) concentration, have been studied by spectrophotometry and photoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the films exhibit similar band gap energies, E{sub g} ≈ 2.9 eV. The absorption spectra of the films show two pronounced absorption bands in the near-infrared region. One peak (P1) is located at approximately 0.7 eV, independent of V{sub o} concentration. A second peak (P2) shifts from 0.96 eV to 1.16 eV with decreasing V{sub o} concentration. Peak P1 is assigned to polaron absorption due to transitions between tungsten sites (W{sup 5+} → W{sup 6+}), or an optical transition from a neutral vacancy state to the conduction band, V{sub o}{sup 0} → W{sup 6+}. The origin of peak P2 is more uncertain but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

  11. Tuning the Photocatalytic Activity of Anatase TiO2 Thin Films by Modifying the Preferred <001> Grain Orientation with Reactive DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    B. Stefanov

    2014-08-01

    Full Text Available Anatase TiO2 thin films were deposited by DC reactive magnetron sputtering on glass substrates at 20 mTorr pressure in a flow of an Ar and O2 gas mixture. The O2 partial pressure (PO2 was varied from 0.65 mTorr to 1.3 mTorr to obtain two sets of films with different stoichiometry. The structure and morphology of the films were characterized by secondary electron microscopy, atomic force microscopy, and grazing-angle X-ray diffraction complemented by Rietveld refinement. The as-deposited films were amorphous. Post-annealing in air for 1 h at 500 °C resulted in polycrystalline anatase film structures with mean grain size of 24.2 nm (PO2 = 0.65 mTorr and 22.1 nm (PO2 = 1.3 mTorr, respectively. The films sputtered at higher O2 pressure showed a preferential orientation in the <001> direction, which was associated with particle surfaces exposing highly reactive {001} facets. Films sputtered at lower O2 pressure exhibited no, or very little, preferential grain orientation, and were associated with random distribution of particles exposing mainly the thermodynamically favorable {101} surfaces. Photocatalytic degradation measurements using methylene blue dye showed that <001> oriented films exhibited approximately 30% higher reactivity. The measured intensity dependence of the degradation rate revealed that the UV-independent rate constant was 64% higher for the <001> oriented film compared to randomly oriented films. The reaction order was also found to be higher for <001> films compared to randomly oriented films, suggesting that the <001> oriented film exposes more reactive surface sites.

  12. Characteristics of High Speed Electro-thermal Jet Activated by Pulsed DC Discharge

    Institute of Scientific and Technical Information of China (English)

    Jichul Shin

    2010-01-01

    Experimental study of synthetic jet produced by pulsed direct current (DC) discharge is presented.High velocity jet is activated electro-thermally by high frequency pulsed DC discharge in small cavity.A cavity of 2.38 mm diameter cylinder bounded by circular electrode is made in a ceramic plate and a small orifice of 1.78 mm diameter is drilled in the middle of cavity.High frequency pulsed DC discharge instantaneously heats air in the cavity and produces high velocity jet at the exit of the orifice.Schlieren imaging at high framing rate of 100 kHz reveals the presence of supersonic precursor shock followed by the jet emerging from the orifice.The jet velocity reaches as high as about 300 m/s.Jet with smaller cavity volume produces lesser effect and jet velocity reaches maximum at certain cavity volume with given discharge current and orifice size.As duty time of pulse increases from 5 to 20 μs at fixed frequency of 5 kHz,the jet velocity also increases and becomes nearly constant with further increase in duty time.At fixed duty time of 20 μs,higher frequency pulsing of 10 kHz produces degradation of the jet as the discharge pulse continues.The jet developed in this study is demonstrated to be strong enough to penetrate deep into supersonic boundary layer and to produce a bow shock when the jet is issued into Math 3 supersonic flow.

  13. DC FLOW SUPPRESSION IN A SINGLE-STAGE G-M TYPE PULSE TUBE COOLER

    Institute of Scientific and Technical Information of China (English)

    JIANGYan-long; CHENGuo-bang; THUMMESGuenter

    2004-01-01

    An experimental investigation on DC flow suppression in a single-stage G-M type pulse tube cooler is made. The influence of DC flow induced by the introduction of the double-inlet on the refrigeration performance of the cooler is experimentally examined. Two parallelplaced needle valves with an opposite flow direction called as double-valved configuration, instead of conventional single-valved configuration as the double-inlet is used to reduce the DC flow. With the double-valved configuration, the minimum temperatures of 18.4 K and 14.7 K, and the cooling powers of 11.5 W and 29.5 W are also obtained by RW2 and CP4000, respectively.

  14. TiO{sub 2} thin films with rutile phase prepared by DC magnetron co-sputtering at room temperature: Effect of Cu incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hui [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Li, Yujie; Ba, Xin; Huang, Lin [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Yu, Ying, E-mail: yuying01@mail.ccnu.edu.cn [Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China)

    2015-08-01

    Highlights: • TiO{sub 2} film mainly with rutile phase can be prepared by DC sputtering at room temperature with incorporated Cu of modest concentration. • With the increase of Cu-incorporated concentration, the optical band gap of TiO{sub 2} film displays a systematic decrease. • The possible incorporation of Cu{sup 1+} in sites previously occupied by Ti{sup 4+} leads to a gradual change from anatase to rutile phase. - Abstract: The thin films for pure TiO{sub 2} and that incorporated with Cu ion were deposited by DC magnetron co-sputtering with Ar gas. The crystal texture, surface morphology, energy gap and optical properties of the prepared films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectrometer (XPS), UV–vis spectrophotometer, and Raman spectroscopy. The results show that as-deposited TiO{sub 2} film mainly possesses anatase structure at room temperature with pure Ar gas, but the introduction of Cu can alter the phase structure of crystallite TiO{sub 2}. XRD patterns and Raman spectra indicate that the Cu incorporation with high concentration (A{sub Cu}/A{sub Ti} + A{sub Cu} ≈ 20%) favors the formation of rutile phase. Moreover, the Cu incorporation into TiO{sub 2} lattice induces band gap narrowing. Band structures and density of states have been analyzed based on density functional theory (DFT) and periodic models in order to investigate the influence of the Cu incorporation on the electronic structure of TiO{sub 2}. Both experimental data and electronic structure calculations evidence the fact that the change in film structure from the anatase to the rutile phase can be ascribed to the possible incorporation of Cu{sup 1+} in the sites previously occupied by Ti{sup 4+}, and the presence of Cu results in important effect on the electronic states, which is mainly related to the 3d Cu orbitals in the gap and in the vicinity of the valence band edges for TiO{sub 2}.

  15. Evaluation of functional reliability indices for DC-link capacitors in pulse-width modulation converters

    Directory of Open Access Journals (Sweden)

    Gorpinich Alexander

    2017-01-01

    Full Text Available The impact of kHz range harmonics on the power losses, thermal stress, and lifetime reduction of the dc-link capacitors in pulse-width modulation (PWM converters was investigated. Expressions to evaluate the mean time to failure, survival probability, and unavailability of aging failure for dc-link capacitors are presented. The dc-link capacitors failures due to accelerated insulation aging were modeled using Weibull and normal distribution. A case study with the Siemens SINAMICS S120 frequency converter for driving of rolling mill leveler shows that the failures of motor modules due to breakdown of electrolytic dc-link capacitors registered for the time frame from May 2012 to October 2012 can be caused by the increased ambient temperature and additional heating due to high-frequency components of the ripple current. As a possible solution to improve reliability of motor modules, the four AVX FFVE4I0227K film capacitors instead of nine EPCOS B43564 electrolytic capacitors in dc-link were recommended.

  16. All Solid-State Pulsed Magnetron Modulator Based on MARX Generator%基于MARX发生器的全固态磁控管调制器

    Institute of Scientific and Technical Information of China (English)

    印长豹; 高龙; 刘凯

    2012-01-01

    This paper proposes an implementation method of a magnetron modulator, in which the MARX generator, with the capacitors charging in parallel and discharging in series, can bring about high-voltage pulse output. The working principles of the MARX generator is presented. The selection methods and the efficient protective functions of crucial devices and parameters are analyzed in detail. Various performances of the MARX modulator versus the original modulator are compared. The advantages of MARX generator as the magnetron modulator are given. The experimental data and waveform prove that the MARX generator modulator system can meet the needs of the magnetron modulator.%结合磁控管调制器的特点,提出一种磁控管调制器的实现方法:电容器并联充电串联放电的MARX发生器方式实现高压脉冲输出.介绍了MARX发生器的具体工作原理,详细分析了各关键器件、参数的选择方法及快速的保护功能,比较MARX调制器与原有调制器的各项性能,阐述MARX发生器作为磁控管调制器的优势所在,并通过最终实验数据及波形说明基于MARX发生器的磁控管调制器系统完全满足磁控管调制器的要求,并有其明显的优势,是非常理想的一种磁控管调制器.

  17. Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, C; Rubio-Roy, M; Bertran, E; Portal, S; Pascual, E; Polo, M C; Andujar, J L, E-mail: corbella@ub.edu [FEMAN Group, IN2UB, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, c/ MartI i Franques 1, 08028 Barcelona (Spain)

    2011-02-15

    The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH{sub 4}) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).

  18. Pulsed DC deposition of near-frictionless carbon. Final CRADA report.

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.; Energy Systems

    2005-06-30

    Near-Frictionless Carbon (NFC) coatings, CemeCon, Inc. arranged for the loan of a Pinnacle Plus pulsed DC power supply with ancillary support equipment and appropriate sputter targets for the deposition of CemeCon's graded Cr-based bond coat. A process engineer from CemeCon AG also came to Argonne to install and operate the new power supply, and work with ANL scientists on process development. By any measure, these results are extremely encouraging. It has now been established that NFC coatings can be deposited in the CemeCon CC800/9sx unit using pulsed DC to generate the plasma, and further that the DLC3000 bond coat technology can be used with PACVD coatings. In terms of process variables, it should be possible to increase the deposition rate by increasing either or both the deposition pressure and/or the pulsed bias voltage without adversely affecting the coating quality. Other structural characterization may be performed on the coatings, including fluctuation microscopy, ultraviolet Raman spectroscopy, and near-edge x-ray absorption fine structure spectroscopy.

  19. Hysteresis Current Control Based Shunt Active Power Filter for Six Pulse Ac/Dc Converter

    Directory of Open Access Journals (Sweden)

    Rakesh Kumar Pandey

    2017-02-01

    Full Text Available In this paper the simulation of Shunt Active power Filter using P-Q theory and PI controller has been presented. This SAPF compensates the harmonic currents drawn by three phase six pulse AC/DC converter. The process of compensation is done by calculating the instantaneous reactive power losses using p-q theory and the PI controller to reduce the ripple voltage of the dc capacitor of the PWM-VSI. This approach is different from conventional approach and provides very effective solution. In this simulation we use hysteresis band current controller (HCC for switching the VSI inverter. The simulation has been done for both steady state and transient conditions

  20. Power quality improvement by using multi-pulse AC-DC converters for DC drives: Modeling, simulation and its digital implementation

    Directory of Open Access Journals (Sweden)

    Mohd Tariq

    2014-12-01

    Full Text Available The paper presents the modeling, simulation and digital implementation of power quality improvement of DC drives by using multi pulse AC–DC converter. As it is a well-known fact that power quality determines the fitness of electrical power to consumer devices, hence an effort has been made to improve power quality in this work. Simulation and digital implementation with the help of MATLAB/Simulink has been done and results obtained are discussed in detail to verify the theoretical results. The multipulse converter was connected with DC drives and was run at no load condition to find out the transient and steady state performances. FFT analysis has been performed and Total Harmonic Distortion (THD results obtained at different pulses are shown here.

  1. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    OpenAIRE

    2014-01-01

    Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) ...

  2. Reduction of TiO2 with hydrogen cold plasma in DC pulsed glow discharge

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yu-wen; DING Wei-zhong; LU Xiong-gang; GUO Shu-qiang; XU Kuang-di

    2005-01-01

    The reduction of TiO2 to Ti2O3 with hydrogen cold plasma generated by a DC pulsed glow discharge was realized under 2 500 Pa at 1 233 K. Only a little of Ti10O19 and Ti9O17 was detected for using molecular hydrogen.Enhancement effects of hydrogen cold plasma on the reduction were discussed in terms of thermodynamic coupling,kinetics and plasma sheath. The exited hydrogen species are considered more effective reducing agents. It is instructive to reduce refractory oxides with plasma hydrogen at the reduced temperature.

  3. Desorption behavior of zinc atoms from zinc-sulfate solution irradiated with pulsed DC plasma

    Science.gov (United States)

    Takaba, Takafumi; Suzuki, Haruka; Toyoda, Hirotaka

    2016-07-01

    A DC pulsed plasma ignited between a metal needle and zinc sulfate (ZnSO4) solution electrode was used to investigate Zn metal desorption from an electrolyte solution. Using an ICCD camera and optical band-pass filter, 2D atomic absorption spectroscopy was carried out during irradiation of pulsed plasma to the surface of the solution. The time-resolved measurement of Zn atoms released to the gas phase revealed that the Zn desorption rate monotonically increased with increasing number of discharge repetitions. The surface temperature of the electrolyte solution was observed with a thermographic camera, and correlations between the H2O and Zn desorption rate were inspected. The correlation between the H2O and Zn desorption rate suggested that Zn desorption is assisted not only by the electric field of the discharge but also by H2O evaporating from the solution.

  4. TiN coating on wall of holes and stitches by pulsed DC plasma enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    马胜利; 徐可为; 介万奇

    2003-01-01

    TiN coating samples with narrow-stitch or deep-hole of different sizes and real dies with complex shape were processed by a larger-scale pulsed plasma enhanced CVD(PECVD) reactor. Scanning electron microscopy, optical microscopy, Vicker's hardness and interfacial adhesion tests were conducted to find the relation between the microstructure and properties of TiN coating on a flat and an inner surface. The results indicate that the inner-wall of holes (d>2 mm) and inner surface of narrow-stitches (d>3 mm) can be coated with the aid of pulsed DC plasma in an industrial-scale reactor. The quality of coatings on different surfaces is almost the same. The coating was applied to aluminum extrusion mould, and the mould life was increased at least by one time.

  5. Method and apparatus for improved high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  6. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    Science.gov (United States)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y. X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N2 mixture. The effects of N2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24° to 49.6°. To some extent, the silicon nitride films deposited are hydrophilic in nature.

  7. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  8. Fabrication of single-phase titanium carbide layers from MWCNTs using high DC pulse.

    Science.gov (United States)

    Kim, Woo Sik; Moon, Sook Young; Lee, Jeong Hoon; Bang, Sin Young; Choi, Bong Geun; Ham, Heon; Sekino, Tohru; Shim, Kwang Bo

    2010-02-05

    Single-phase layered titanium carbide (TiC) was successfully synthesized by reacting carbon nanotubes (CNTs) and titanium dioxide (TiO2) under a high direct current (DC) pulse. Single-phase TiC layer fabrication is confirmed as the transformation of multi-layered graphene from MWCNTs. Therefore its thickness and width is almost identical to those of transformed graphene layers. This is the first report on the formation of single-phase layered nano-TiC. Scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) were used for the characteristic analysis of single-phase layered TiC structures.

  9. An atmospheric pressure plasma source driven by a train of monopolar high voltage pulses superimposed to a dc voltage

    OpenAIRE

    Stoican, O.S.

    2011-01-01

    Abstract An atmospheric pressure plasma source supplied by an electrical circuit consisting of two voltage sources in parallel connection is reported. One of them is a low-power self-oscillating flyback converter which produces negative voltage pulses with an amplitude of several kilovolts. The high voltage pulses are necessary to ignite an electrical discharge between the electrodes at atmospheric pressure. An additional dc source delivering several hundreds of volts at a few hund...

  10. IR emission from the target during plasma magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cormier, P.-A. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Thomann, A.-L., E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Dolique, V. [LMA, Université Claude Bernard Lyon I 7 Avenue Pierre de Coubertin, 69622 Villeurbanne Cedex (France); Balhamri, A. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Université Hassan 1, École Supérieure de Technologie, 218 Berrechid (Morocco); Dussart, R.; Semmar, N.; Lecas, T.; Brault, P. [GREMI, Université d' Orléans, 14 rue d' Issoudun, B.P. 6744, 45067 Orleans Cedex2 (France); Snyders, R. [ChIPS, Université de Mons, 20 Place du Parc, 7000 Mons (Belgium); Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium); Konstantinidis, S. [Materia Nova R and D Center, Avenue Corpernic 1, Mons (Belgium)

    2013-10-31

    In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium (10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma–target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 °C to 870 °C. - Highlights: • During magnetron sputtering process the heated target emits IR radiation. • We follow in real time the energy transferred to the deposited film by IR radiation. • IR radiation can be the main energy contribution in balanced pulsed processes. • IR radiation might affect the deposition process and the final film properties.

  11. DC Studies of Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    Science.gov (United States)

    Meisenhelder, C. M.; Bott-Suzuki, S. C.; Haas, D. M.

    2013-10-01

    Previously, pulsed power loads for inertial fusion have been envisioned as cylindrical wire arrays, which could easily be constrained to be in contact with both electrodes for a good electrical connection. Recently, solid liners have become the load of choice for Magnetized Liner Inertial Fusion (MagLIF) experiments which are currently being conducted on the Z-Machine at Sandia National Laboratory. These liners cannot easily be constrained as previous wire loads were, particularly for a repetitive system. The result is a vacuum gap between the driver electrodes and load, which may have unknown effects on the stability and development of the plasma system. DC voltages up to 30 kV will be applied to coaxial electrodes in vacuum to simulate a variety of possible gap parameters for pulsed power liners. This work investigates the breakdown-timing, azimuthal symmetry and coupling of the driver energy to the load as a function of gap parameters to better understand the subsequent behavior of a liner load. Supported by the National Undergraduate Fellowship Program in Plasma Physics and Fusion Energy Sciences and under DE-NA0001836 and GA IR&D funding.

  12. Protection effect of ZrO2 coating layer on LiCoO2 thin film fabricated by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung-Pil; Jung, Ki-Taek; Jang, Min-Sun; Kwon, Tae-Hoon; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun

    2013-10-01

    Bare and ZrO2-coated LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 substrates. Deposited both films have a well-crystallized structure with (003) preferred orientation after annealing at 600 degrees C. The ZrO2-coated LiCoO2 thin film provide significantly improved cycling stability compared to bare LiCoO2 thin film at high cut-off potential (3.0-4.5 V). The improvement in electrochemical stability is attributed to the structural stability by ZrO2 coating layer.

  13. Investigation of DC magnetron-sputtered TiO2 coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Shabadi, Rajashekhara; Galca, Aurelian Catalin

    2014-01-01

    The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO2) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic...... that the TiO2 grains grow in dipyramidal columns having a linear increase in surface area with increased coating thickness. The refractive index values indicate also an evolutionary growth. The refractive index values obtained for the thin coatings on aluminium substrate were well below the values reported...

  14. Kinetic studies of NO formation in pulsed air-like low-pressure dc plasmas

    Science.gov (United States)

    Hübner, M.; Gortschakow, S.; Guaitella, O.; Marinov, D.; Rousseau, A.; Röpcke, J.; Loffhagen, D.

    2016-06-01

    The kinetics of the formation of NO in pulsed air-like dc plasmas at a pressure of 1.33 mbar and mean currents between 50 and 150 mA of discharge pulses with 5 ms duration has been investigated both experimentally and by self-consistent numerical modelling. Using time-resolved quantum cascade laser absorption spectroscopy, the densities of NO, NO2 and N2O have been measured in synthetic air as well as in air with 0.8% of NO2 and N2O, respectively. The temporal evolution of the NO density shows four distinct phases during the plasma pulse and the early afterglow in the three gas mixtures that were used. In particular, a steep density increase during the ignition phase and after termination of the discharge current pulse has been detected. The NO concentration has been found to reach a constant value of 0.57× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , 1.05× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} , and 1.3× {{10}14}~\\text{molecules}~\\text{c}{{\\text{m}}-3} for mean plasma currents of 50 mA, 100 mA and 150 mA, respectively, in the afterglow. The measured densities of NO2 and N2O in the respective mixture decrease exponentially during the plasma pulse and remain almost constant in the afterglow, especially where the admixture of NO2 has a remarkable impact on the NO production during the ignition. The numerical results of the coupled solution of a set of rate equations for the various heavy particles and the time-dependent Boltzmann equation of the electrons agree quite well with the experimental findings for the different air-like plasmas. The main reaction processes have been analysed on the basis of the model calculations and the remaining differences between the experiment and modelling especially during the afterglow are discussed.

  15. Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Tetsuhide, E-mail: simizu-tetuhide@tmu.ac.jp [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan); Teranishi, Yoshikazu; Morikawa, Kazuo; Komiya, Hidetoshi; Watanabe, Tomotaro; Nagasaka, Hiroshi [Surface Finishing Technology Group, Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Kohtoh-ku, 135-0064 Tokyo (Japan); Yang, Ming [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan)

    2015-04-30

    (Ti,Al)N films were deposited from a Ti{sub 0.33}Al{sub 0.67} alloy target with a high Al content at a substrate temperature of less than 150 °C using high power impulse magnetron sputtering (HIPIMS) plasma. The pulse duration was varied from 60 to 300 μs with a low frequency of 333 Hz to investigate the effects on the dynamic variation of the substrate temperature, microstructural grain growth and the resulting mechanical properties. The chemical composition, surface morphology and phase composition of the films were analyzed by energy dispersive spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. Mechanical properties were additionally measured by using a nanoindentation tester. A shorter pulse duration resulted in a lower rate of increase in the substrate temperature with an exponentially higher peak target current. The obtained films had a high Al content of 70–73 at.% with a mixed highly (0002) textured wurtzite phase and a secondary phase of cubic (220) grains. Even with the wurtzite phase and the relatively high Al contents of more than 70 at.%, the films exhibited a high hardness of more than 30 GPa with a relatively smooth surface of less than 2 nm root-mean-square roughness. The hardest and smoothest surfaces were obtained for pulses with an intermediate duration of 150 μs. The differences between the obtained film properties under different pulse durations are discussed on the basis of the grain growth process observed by transmission electron microscopy. The feasibility of the low-temperature synthesis of AlN rich wurtzite phase (Ti,Al)N films with superior hardness by HIPIMS plasma duration was demonstrated. - Highlights: • Low temperature synthesis of AlN rich wurtzite phase (Ti,Al)N film was demonstrated. • 1 μm-thick TiAlN film was deposited under the temperature less than 150 °C by HIPIMS. • High Al content with highly (0002) textured wurtzite phase structure was obtained. • High hardness of 35 GPa were

  16. Surface treatment of diamond-like carbon films by reactive Ar/CF{sub 4} high-power pulsed magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, Takashi, E-mail: t-kimura@nitech.ac.jp [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Nishimura, Ryotaro [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Azuma, Kingo [Department of Electrical Engineering and Computer Sciences, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Nakao, Setsuo; Sonoda, Tsutomu; Kusumori, Takeshi; Ozaki, Kimihiro [National Institute of Advanced Industrial Science and Technology (AIST) - Chubu, 2266-98 Anagahora, Moriyama, Nagoya 463-8560 (Japan)

    2015-12-15

    Surface modification of diamond-like carbon films deposited by a high-power pulsed magnetron sputtering (HPPMS) of Ar was carried out by a HPPMS of Ar/CF{sub 4} mixture, changing a CF{sub 4} fraction from 2.5% to 20%. The hardness of the modified films markedly decreased from about 13 to about 3.5 GPa with increasing CF{sub 4} fraction, whereas the water contact angle of the modified films increased from 68° to 109° owing to the increase in the CF{sub x} content on the film surface. C 1s spectra in X-ray photoelectron spectroscopy indicated that a graphitic structure of modified films was formed at CF{sub 4} fractions less than 5%, above which the modified films possessed a polymer-like structure. Influence of treatment time on the properties of the modified films was also investigated in the range of treatment time from 5 to 30 min. The properties of the modified films did not depend on the treatment time in the range of treatment time longer than 10 min, whereas the water contact angle was not sensitive to the treatment time at any treatment time.

  17. Effect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hans, M., E-mail: hans@mch.rwth-aachen.de; Baben, M. to; Music, D.; Ebenhöch, J.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Primetzhofer, D. [Department of Physics and Astronomy, Uppsala University, Lägerhyddsvägen 1, S-75120 Uppsala (Sweden); Kurapov, D.; Arndt, M.; Rudigier, H. [Oerlikon Balzers Coating AG, Iramali 18, LI-9496 Balzers, Principality of Liechtenstein (Liechtenstein)

    2014-09-07

    Ti-Al-O-N coatings were synthesized by cathodic arc and high power pulsed magnetron sputtering. The chemical composition of the coatings was determined by means of elastic recoil detection analysis and energy dispersive X-ray spectroscopy. The effect of oxygen incorporation on the stress-free lattice parameters and Young's moduli of Ti-Al-O-N coatings was investigated by X-ray diffraction and nanoindentation, respectively. As nitrogen is substituted by oxygen, implications for the charge balance may be expected. A reduction in equilibrium volume with increasing O concentration is identified by X-ray diffraction and density functional theory calculations of Ti-Al-O-N supercells reveal the concomitant formation of metal vacancies. Hence, the oxygen incorporation-induced formation of metal vacancies enables charge balancing. Furthermore, nanoindentation experiments reveal a decrease in elastic modulus with increasing O concentration. Based on ab initio data, two causes can be identified for this: First, the metal vacancy-induced reduction in elasticity; and second, the formation of, compared to the corresponding metal nitride bonds, relatively weak Ti-O and Al-O bonds.

  18. Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping, E-mail: yangping8@263.net; Sun, Hong; Huang, Nan

    2013-10-15

    The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO{sub 2} substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO{sub 2}, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

  19. Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

    Science.gov (United States)

    Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

    2013-10-01

    The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

  20. Electrochromic properties and performance of NiOx films and their corresponding all-thin-film flexible devices preparedby reactive DC magnetron sputtering

    Science.gov (United States)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhang, Fan; He, Yingchun; Yu, Hang; Liu, Famin; Wang, Mei; Diao, Xungang

    2016-10-01

    Nickel oxide (NiOx) thin films were deposited by direct current magnetron sputtering technique onto flexible substrates with various oxygen (O2) partial pressures. The influence of O2 contents during deposition process on film structure, morphology, composition, optical and electrochromic (EC) characteristics of the films were investigated. The EC response for nonstoichiometric NiOx films shows a strong dependence on grain size variations and surface morphology. Finally, the multiple-layer stacks ITO/NiOx/Ta2O5:H/WO3/ITO were sequentially vacuum deposited over flexible polyethylene terephthalate plates based on the optimization of NiOx single layers. A large optical contrast up to 60% and a good durability are obtained for full device. To perform preliminary research on the mechanical properties within flexible devices, we introduced nontrivial changes to the interfacial properties by replacing the glass with flexible polymers. The effects were studied through static bending and the nano-scratch test.

  1. XPS and AFM Investigations of Ti-Al-N Coatings Fabricated Using DC Magnetron Sputtering at Various Nitrogen Flow Rates and Deposition Temperatures

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available Ti-Al-N coatings were deposited by direct current magnetron sputtering (DCMS onto IN 718 at different nitrogen flow rates and deposition temperatures. The coatings’ properties were characterized using atomic force microscopy (AFM, X-ray photoelectron spectroscopy (XPS as well as nanoindentation. It was found that higher deposition temperature leads to higher surface roughness and nitrogen flux influences the shape of grains. According to XPS, the bonding structure of all coatings exhibited the (Ti,AlN phase. Mechanical properties depend on the Al content within the films. The coating with the best mechanical properties (deposited at 500 °C and 20 standard cubic centimeters per minute (sccm was further deposited onto tungsten carbide (WC cutting tools for cylindrical turning experiments. A quasi-constant flank wear was observed until a machining volume of 23,500 mm3.

  2. Modification of stearic acid in Ar and Ar-O2 pulsed DC discharge

    Directory of Open Access Journals (Sweden)

    Euclides Alexandre Bernardelli

    2011-12-01

    Full Text Available Stearic acid (CH3(CH216COOH was treated with Ar and Ar-O2 (10% pulsed DC discharges created by a cathode-anode confined system to elucidate the role of oxygen in plasma cleaning. The treatment time (5 to 120 minutes and plasma gas mixture (Ar and Ar-O2 were varied, and the results showed that the mass variation of stearic acid after Ar-O2 plasma exposure was greater than that of pure Ar plasma treatment. Thus, compared to Ar*, active oxygen species (O and O2, in all states enhance the etching process, regardless of their concentration. During the treatments, a liquid phase developed at the melting temperature of stearic acid, and differential thermal analyses showed that the formation of a liquid phase was associated with the breakage of bonds due to treatment with an Ar or Ar-O2 plasma. After treatment with Ar and Ar-O2 plasmas, the sample surface was significantly modified, especially when Ar-O2 was utilized. The role of oxygen in the treatment process is to break carbonaceous chains by forming oxidized products and/or to act as a barrier again ramification, which accelerates the etching of stearic acid.

  3. Modification of stearic acid in Ar and Ar-O{sub 2} pulsed DC discharges

    Energy Technology Data Exchange (ETDEWEB)

    Bernardelli, E.A.; Souza, T.; Maliska, A.M.; Kleinjohann, K.J.; Bendo, T. [Federal University of Santa Catarina (UFSC), Florianopolis, SC (Brazil); Mafra, M. [Nancy-Universite (France). Institut Jean Lamour; CNRS, Nancy (France); Belmonte, T. [Federal University of Technology from Parana (UTFPR), Curitiba, PR (Brazil)

    2010-07-01

    Stearic acid (C{sub 1}8H{sub 36}O{sub 2}) was treated into Ar and Ar-O{sub 2}(10%) pulsed DC discharge created by a cathode-anode confined system. The samples were placed at the floating potential. The results show that the mass variation of the stearic acid samples after Ar-O{sub 2} plasma exposure is more important than the pure Ar plasma treatments. This comportment demonstrate that the oxygen actives species (O and O{sub 2} in all states) strongly enhance the etching process with regards to A{sup *} species, regardless of their concentration. After treatment by Ar and Ar-O{sub 2} plasma, analyses by X-ray diffraction show a significant structural modification of the samples surface, utilizing Ar-O{sub 2} plasma the modification was more pronounced. The chemical composition evolution shows that the acid function is etched preferentially in the beginning of the treatment (about 5 min) and that after 10 min the carbonic chains seems to be functionalized by oxygen. (author)

  4. Optimization of pulsed DC PACVD parameters: Toward reducing wear rate of the DLC films

    Science.gov (United States)

    Ebrahimi, Mansoureh; Mahboubi, Farzad; Naimi-Jamal, M. Reza

    2016-12-01

    The effect of pulsed direct current (DC) plasma-assisted chemical vapor deposition (PACVD) parameters such as temperature, duty cycle, hydrogen flow, and argon/CH4 flow ratio on the wear behavior and wear durability of the diamond-like carbon (DLC) films was studied by using response surface methodology (RSM). DLC films were deposited on nitrocarburized AISI 4140 steel. Wear rate and wear durability of the DLC films were examined with the pin-on-disk method. Field emission scanning electron microscopy, Raman spectroscopy, and nanoindentation techniques were used for studying wear mechanisms, chemical structure, and hardness of the DLC films. RSM results show that duty cycle is one of the important parameters that affect the wear rate of the DLC samples. The wear rate of the samples deposited with a duty cycle of >75% decreases with an increase in the argon/CH4 ratio. In contrast, for a duty cycle of <65%, the wear rate increases with an increase in the argon/CH4 ratio. The wear durability of the DLC samples increases with an increase in the duty cycle, hydrogen flow, and argon/CH4 flow ratio at the deposition temperature between 85 °C and 110 °C. Oxidation, fatigue, abrasive wear, and graphitization are the wear mechanisms observed on the wear scar of the DLC samples deposited with the optimum deposition conditions.

  5. Depth dependent properties of ITO thin films grown by pulsed DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sytchkova, A., E-mail: anna.sytchkova@enea.it [ENEA Optical Coatings Laboratory, via Anguillarese 301, 00123 Rome (Italy); Zola, D. [ENEA Optical Coatings Laboratory, via Anguillarese 301, 00123 Rome (Italy); Bailey, L.R.; Mackenzie, B.; Proudfoot, G. [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Tian, M. [NT-MDT Europe BV, High Tech Campus 83, 5656 AG Eindhoven (Netherlands); Ulyashin, A. [SINTEF Materials and Chemistry, Forskningsveien 1, P.O. 124 Blindern, NO-0314 Oslo (Norway)

    2013-05-15

    A systematically prepared set of ITO layers for solar cell applications has been analyzed by spectroscopic variable angle ellipsometry in order to trace the dependence of free carriers’ distribution along the film depth as a function of film thickness as well as its change upon annealing. Samples were deposited on silicon substrates with various thicknesses in steps of approximately 10–20 nm. This set was duplicated and these samples were annealed, so that for each thickness an as-deposited and an annealed sample is available. Conventionally measured electrical conductivity and morphological properties (AFM measurements) of the films have been compared with the optical constants’ inhomogeneity, i.e. material properties along the film thickness modelled by variable-angle spectroscopic ellipsometry. The obtained results show that the optical as well as electrical properties of thin ITO films prepared by pulsed DC sputtering are depth dependent. For the deposition conditions used a well-determined reproducible non-uniform distribution of free carriers within the film thickness was determined. In particular it has been found that the majority of free carriers in as-deposited ultra-thin ITO films is concentrated at sample half-depth, while their distribution becomes asymmetric for the thicker films, with a maximum located at approximately 40 nm depth. The distribution of free carriers in annealed samples is qualitatively different from that of as-deposited layers.

  6. Investigation of plasma parameters in an active screen cage-pulsed dc plasma used for plasma nitriding

    Science.gov (United States)

    Naeem, M.; Khattak, Z. I.; Zaka-ul-Islam, M.; Shabir, S.; Khan, A. W.; Zakaullah, M.

    2014-11-01

    Active screen cage-pulsed dc plasmas are widely used in the material processing applications such as plasma nitriding, carburizing and nitrocarburizing. Specifically for plasma nitriding applications, a H2-N2 mixture is used. In this article, a study of the electron number density (ne), atomic nitrogen density ([N]), electron temperature ? and the excitation temperature ? is reported in the presence of an active screen cage-pulsed dc plasma. The ne and ? are determined here by a triple Langmuir probe, while [N] and ? are estimated by optical emission spectroscopy (OES). The two temperatures and their ratio ? are compared for different input parameters (such as applied power, gas pressure and H2 percentage). This study is useful in active screen cage plasma nitriding applications where only few plasma diagnostic measurements have been reported.

  7. Decontamination of Streptococci biofilms and Bacillus cereus spores on plastic surfaces with DC and pulsed corona discharges

    Science.gov (United States)

    Koval'ová, Zuzana; Tarabová, Kataŕna; Hensel, Karol; Machala, Zdenko

    2013-02-01

    Cold air plasmas of DC and pulsed corona discharges: positive streamers and negative Trichel pulses were used for bio-decontamination of Streptococci biofilm and Bacillus cereus spores on polypropylene plastic surfaces. The reduction of bacterial population (evaluated as log10) in the biofilm on plastic surfaces treated by DC corona reached 2.4 logs with 10 min treatment time and 3.3 logs with 2 min treatment time with water spraying. The enhancement of plasma biocidal effects on the biofilm by electro-spraying of water through a hollow needle high-voltage electrode was investigated. No significant polarity effect was found with DC corona. Pulsed corona was demonstrated slightly more bactericidal for spores, especially in the negative polarity where the bacterial population reduction reached up to 2.2 logs at 10 min exposure time. Contribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.

  8. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    Science.gov (United States)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  9. On the pressure effect in energetic deposition of Cu thin films by modulated pulsed power magnetron sputtering: A global plasma model and experiments

    Science.gov (United States)

    Zheng, B. C.; Meng, D.; Che, H. L.; Lei, M. K.

    2015-05-01

    The modulated pulsed power magnetron sputtering (MPPMS) discharge processes are numerically modeled and experimentally investigated, in order to explore the effect of the pressure on MPPMS discharges as well as on the microstructure of the deposited thin films. A global plasma model has been developed based on a volume-averaged global description of the ionization region, considering the loss of electrons by cross-B diffusion. The temporal variations of internal plasma parameters at different pressures from 0.1 to 0.7 Pa are obtained by fitting the model to duplicate the experimental discharge data, and Cu thin films are deposited by MPPMS at the corresponding pressures. The surface morphology, grain size and orientation, and microstructure of the deposited thin films are investigated by scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. By increasing the pressure from 0.1 to 0.7 Pa, both the ion bombardment energy and substrate temperature which are estimated by the modeled plasma parameters decrease, corresponding to the observed transition of the deposited thin films from a void free structure with a wide distribution of grain size (zone T) into an underdense structure with a fine fiber texture (zone 1) in the extended structure zone diagram (SZD). The microstructure and texture transition of Cu thin films are well-explained by the extended SZD, suggesting that the primary plasma processes are properly incorporated in the model. The results contribute to the understanding of the characteristics of MPPMS discharges, as well as its correlation with the microstructure and texture of deposited Cu thin films.

  10. The effects of substrate and annealing on structural and electrochemical properties in LiCoO2 thin films prepared by DC magnetron sputtering.

    Science.gov (United States)

    Noh, Jung Pil; Jung, Ki Taek; Cho, Gyu Bong; Lee, Sang Hun; Kim, Ki Won; Nam, Tae Hyun

    2012-07-01

    LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode.

  11. Investigation of DC magnetron-sputtered TiO{sub 2} coatings: Effect of coating thickness, structure, and morphology on photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Daviðsdóttir, Svava, E-mail: sdav@mek.dtu.dk [Division of Materials and Surface and Engineering, Department of Mechanical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Shabadi, Rajashekhara [Denmark d Unité Matériaux et Transformations, C6, Université Lille, 59655 Villeneuve d’Ascq (France); Galca, Aurelian Catalin [Laboratory of Multifunctional Materials and Structures, National Institute of Materials Physics, Măgurele, RO-077125 Bucharest (Romania); Andersen, Inge Hald [Danish Technological Institute, Tribology Centre, Teknologiparken, Building 18, Kongsvang All 29, DK-8000 Aarhus C (Denmark); Dirscherl, Kai [Danish Fundamental Metrology, Matematiktorvet 307, DK-2800 Kgs. Lyngby (Denmark); Ambat, Rajan [Division of Materials and Surface and Engineering, Department of Mechanical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark)

    2014-09-15

    The photocatalytic performance of magnetron-sputtered titanium dioxide (TiO{sub 2}) coatings of different thickness in anatase crystalline structure deposited on aluminium 1050 alloy substrates was investigated using a combination of photo-electrochemistry, methylene blue decomposition, and microscopic and spectroscopic methods, such as high resolution scanning and transmission electron microscopy, atomic force microscopy and ellipsometry. The reaction resistance was measured by AC impedance, while photocurrent measurements were carried out using the zero resistance ammetry (ZRA) method. The results showed that the TiO{sub 2} grains grow in dipyramidal columns having a linear increase in surface area with increased coating thickness. The refractive index values indicate also an evolutionary growth. The refractive index values obtained for the thin coatings on aluminium substrate were well below the values reported for monocrystalline anatase. The photocatalytic performance increased with increased coating thickness, though more rapidly over a range of 100–500 nm thickness. The dielectric constant also increased linearly with coating thickness.

  12. Studies on the reactive pulsed-magnetron sputtering of ITO from metallic targets; Untersuchungen zum reaktiven Pulsmagnetronsputtern von ITO von metallischen Targets

    Energy Technology Data Exchange (ETDEWEB)

    Gnehr, W.M.

    2006-06-15

    The thesis deals with a reactive sputter process for the deposition of ITO- films. In contrast to the usual technique, the sputter targets consists of indium-tin-alloy instead of ceramic ITO. All experiments were conducted on an inline coater with 600 mm target-width. The process is stabilized by a control loop based on optical emission detection. The experiments prove, that this control loop guarantees a long term stability of the outcomes of the coating process.Process parameters, that are crucial for the optical and electrical properties of the deposited thin films are identified and studied. Among them are the flow of oxygen and the substrate temperature but also less obvious parameters such as the distance between target and substrate.Througout the work the focus is on the film deposition with pulsed plasmas. Novel bipolar DC pulse- and pulse package generators are employed for the deposition.In order to shed some light onto the influence of certain pulse parameters on the outcome of a particular coating process, a Monte-Carlo-Simulation of the particle flow in pulsed plasmas is developed. This simulation yields the distribution of particles and their respective energies on deliberately placed planes in the process chamber. Particles under investigation are both sputtered species and neutral sputter gas atoms reflected at the target. The results of this simulation provide an explanation for the influence of certain pulse parameters on the outcome of the coating process. The further investigations deal with the influence of the construction of the process chamber on the coating process. For this purpose, locally resolved optical spectra are recorded. In order to analyse these spectra, a novel connected fit algorithm is developed.This algorithm yields the distribution of certain fitparameters on the substrate. Provided the most complex of the discussed parametrizations of the dielectric function are used, these can be crucial properties such as the carrier

  13. Effect of deposition temperature on microstructure and corrosion resistance of ZrN thin films deposited by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Daiane; Bernardi, Juliane; Amorim, Cintia L.G. de [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Souza, Fernando S. de; Spinelli, Almir [Departamento de Quimica, Universidade Federal de Santa Catarina, Florianopolis, SC 88040-900 (Brazil); Giacomelli, Cristiano [Departamento de Quimica, Universidade Federal de Santa Maria, Santa Maria, RS 97105-900 (Brazil); Figueroa, Carlos A. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Baumvol, Israel J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS 91509-970 (Brazil); Basso, Rodrigo L.O., E-mail: rlobasso@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, Caxias do Sul, RS 95070-560 (Brazil)

    2011-10-17

    Highlights: {center_dot} Deposition conditions determine the thickness and microstructure of the ZrN films. {center_dot} For ZrN films relatively thin, the microstructure shows no preferred orientation. {center_dot} For ZrN film relatively thick, preferred orientation is in the (1 1 1) direction. {center_dot} Composition and microstructure controls the corrosion resistance of the ZrN films. {center_dot} The air exposure forms oxide and oxynitride layer promoting the corrosion resistance. - Abstract: Thin films of zirconium nitride were deposited on different substrates by direct current reactive magnetron sputtering, varying the deposition time, Ar/N{sub 2} partial pressure ratio and substrate temperature. The physicochemical, crystalline structure and corrosion resistance of the thin films were studied by glancing angle X-ray diffraction, Rutherford backscattering spectrometry, scanning electron microscopy, X-ray photoelectron spectroscopy and potentiodynamic polarization tests in artificial saliva solution. The results show that the thin films presents high texture in [1 1 1] direction verified by X-ray diffraction measurements which indicated the lack of a Bragg peak for (2 0 0) crystallographic planes for a lower deposition temperatures. The XPS analysis showed the presence of ZrN and also the oxide species (ZrN{sub x}O{sub y} and ZrO{sub 2}) at the surface, with chemical states changing with deposition temperatures. In addition, the thin ZrN films were found to be stable in an electrochemical cell over a large potential range and the pitting potential increases with increasing the deposition temperature. For deposition at 500 deg. C, the pitting potential was found to be E{sub p} = 1.5 V/SCE. The corrosion behavior is attributed to the formation of thin ZrN{sub x}O{sub y} and ZrO{sub 2} layer on the top surface of the films, with increasing of the deposition temperature.

  14. The effect of the oxygen ratio control of DC reactive magnetron sputtering on as-deposited non stoichiometric NiO thin films

    Science.gov (United States)

    Wang, Mengying; Thimont, Yohann; Presmanes, Lionel; Diao, Xungang; Barnabé, Antoine

    2017-10-01

    Non-stoichiometric Ni1-xO thin films were prepared on glass substrate by direct current reactive magnetron sputtering in a large range of oxygen partial pressure (0 ≤ pO2 ≤ 1 Pa). The dependence of the deposited film structure and properties on oxygen stoichiometry were systematically analyzed by X-ray diffraction, X-ray reflectivity, X-ray photoemission spectroscopy, Raman spectroscopy, atomic force microscopy, UV-vis measurements and electrical transport properties measurements. The deposition rates, surface morphology and opto-electrical properties are very sensitive to the oxygen partial pressure lower than 0.05 Pa due to the presence of metallic nickel cluster phase determined by X-ray diffraction, X-ray reflectivity and XPS spectroscopy. Presence of nanocrystallized NiO phase was highlighted even for pO2 = 0 Pa. For pO2 > 0.05 Pa, only the NiO phase was detected. Progressive appearance of Ni3+ species is characterized by a fine increase of the lattice parameter and (111) preferred orientation determined by grazing angle X-ray diffraction, fine increase of the X-ray reflectivity critical angle, displacement of the Ni 2p3/2 signal towards lower energy, significant increase of the electrical conductivity and decrease of the total transmittance. Quantification of Ni3+ by XPS method is discussed. We also showed that the use of Raman spectroscopy was relevant for demonstrating the presence of Ni3+ in the Ni1-xO thin films.

  15. Structure and Properties of Nanocrystalline (TiZrxN1−x Thin Films Deposited by DC Unbalanced Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Yu-Wei Lin

    2016-01-01

    Full Text Available This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001 substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111 was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN. At high nitrogen flow rates (1.0–2.5 sccm, the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

  16. Preparation and Characterization of TiO2/TiN/TiO2 Multi-layer Solar Control Coatings Deposited by D.C. Reactive Magnetron Sputtering at Different Substrate Temperature

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Transparent TiO2/TiN/TiO2 multi-layer solar control coatings were prepared on normal soda-lime-silica float glass substrate by using d.c. reactive magnetron sputtering at substrate temperature ranging from room temperature to 620℃. The dependence of optical properties of the coatings and the coating composition, on the substrate temperature was studied. The results of the optical properties show that as the substrate temperature increases, a visible transmittance as high as 65% can be obtained. When the substrate temperature is higher than 570℃, the infrared reflectance decreases. The results of X-ray photoelectron spectroscopy (XPS) show that when the substrate temperature is higher than 520℃ in oxygen atmosphere, the formation of thin surface over-layers (TiNxOy) on top of the TiN films can be observed. When the substrate temperature is at 620℃, the oxynitride become TiO2, which results in the optical degradation of TiN layer in infrared reflectance.

  17. Structure and optical properties of Cd-substituted ZnO (Zn{sub 1-x}Cd{sub x}O) thin films synthesized by the dc reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jinghai; Yue, Yonggao; Sui, Yingrui; Cao, Yan; Wei, Maobin; Liu, Xiaoyan; Yang, Lili; Lang, Jihui; Li, Xuefei; Li, Xiuyan [Jilin Normal University, Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Institute of Condensed State Physics, Siping (China)

    2014-11-15

    The ternary Zn{sub 1-x}Cd{sub x}O (x = 0, 0.2) thin films with wurtzite structure and highly (002)-preferred orientations were deposited on glass substrates by the direct current (dc) reactive magnetron sputtering method. The X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), optical absorption spectra and photoluminescence (PL) were employed to investigate the structural and the optical properties in detail. The results indicated that as x varied from x = 0-0.2, the diffraction angle of the (002) peaks decreased from ∝34.36 to ∝33.38 and the lattice spacing increased from 0.260 to 0.268 nm. Moreover, the optical band-gap of the Zn{sub 1-x}Cd{sub x}O thin films with the wurtzite structure decreased from 3.20 eV at x = 0-2.70 eV at x = 0.2. Correspondingly, the near-band-edge PL was tuned in a wide visible region from ∝393 to 467 nm. The chemical bonding states of Cd in Zn{sub 1-x}Cd{sub x}O alloy thin films were examined by XPS analysis. (orig.)

  18. Microstructure, mechanical properties and wetting behavior of F: Si–C–N films as bio-mechanical coating grown by DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhifeng, E-mail: scut0533@126.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Wang, Yingjun, E-mail: imwangyj@163.com [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China); Huang, Nan [Key Lab. for Advanced Technologies of Materials, Ministry of Education, Southwest Jiaotong University, 610031 Chengdu (China); Ning, Chengyun; Wang, Lin [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)

    2013-03-05

    Highlights: ► The F: Si–C–N film coating on Co–Cr alloy as bio-mechanical coating was put forward. ► Significant role of F and C doped on structure and properties in the film was observed. ► The as-deposited F: Si–C–N films are amphipathic nature. ► F: Si–C–N coatings show improvement in the tribological behavior over the uncoated Co–Cr–Mo. ► Compared with Co–Cr alloy, F: Si–C–N films could improve hardness enhances 1.7 times. -- Abstract: A systematic structure and properties investigation on the deposition of fluorinated silicon–carbon–nitride (Si–C–N) films under varying CF{sub 4} flows was carried out by direct current unbalanced magnetron sputtering techniques. Significant role of fluorine and carbon-doped on growth characteristics and mechanical properties in the film was observed. The chemical bonding configurations, surface topography and mechanical properties were characterized by means of X-ray photoelectron spectroscopy (XPS), Raman and infrared spectroscopies, atomic force microscopy (AFM) and nano-indentation technique and CSM pin-on-disk tribometer. It was found that the as-deposited F: Si–C–N films are amphipathic nature, and large variations took place these films’ deposition rate, composition, microstructure and mechanical properties when CF{sub 4} flows varied from 0 to 9 sccm. At CF{sub 4} gas flow rate 9 sccm, the F: Si–C–N coatings demonstrated a fluorine content of 5.95 at.% and a moderate friction coefficient of 0.03. It is obvious from the hardness results that the F: Si–C–N coating enhances the hardness of the Co–Cr–Mo alloy to approximately 16.3 GPa on a smoother surface. The tribological characterization of Co–Cr–Mo alloy with F: Si–C–N coating sliding against ultrahigh molecular weight polyethylene (UHMWPE) counter-surface in fetal bovine serum, shows that the wear resistance of the F: Si–C–N coated Co–Cr–Mo alloy/UHMWPE sliding pair show much obviously

  19. Deposition of hard and adherent diamond-like carbon films inside steel tubes using a pulsed-DC discharge.

    Science.gov (United States)

    Trava-Airoldi, Vladimir Jesus; Capote, Gil; Bonetti, Luís Francisco; Fernandes, Jesum; Blando, Eduardo; Hübler, Roberto; Radi, Polyana Alves; Santos, Lúcia Vieira; Corat, Evaldo José

    2009-06-01

    A new, low cost, pulsed-DC plasma-enhanced chemical vapor deposition system that uses a bipolar, pulsed power supply was designed and tested to evaluate its capacity to produce quality diamond-like carbon films on the inner surface of steel tubes. The main focus of the study was to attain films with low friction coefficients, low total stress, a high degree of hardness, and very good adherence to the inner surface of long metallic tubes at a reasonable growth rate. In order to enhance the diamond-like carbon coating adhesion to metallic surfaces, four steps were used: (1) argon ion sputtering; (2) plasma nitriding; (3) a thin amorphous silicon interlayer deposition, using silane as the precursor gas; and (4) diamond-like carbon film deposition using methane atmosphere. This paper presents various test results as functions of the methane gas pressure and of the coaxial metal anode diameter, where the pulsed-DC voltage constant is kept constant. The influence of the coaxial metal anode diameter and of the methane gas pressure is also demonstrated. The results obtained showed the possibilities of using these DLC coatings for reduced friction and to harden inner surface of the steel tubes.

  20. Effect of process parameters on mechanical and tribological performance of pulsed-DC sputtered TiC/a-C : H nanocomposite films

    NARCIS (Netherlands)

    Shaha, K.P.; Pei, Y.T.; Martinez-Martinez, D.; Sanchez-Lopez, J.C.; Hosson, J.Th.M. De

    2010-01-01

    Mechanical, structural, chemical bonding (sp(3)/sp(2)). and tribological properties of films deposited by pulsed-DC sputtering of Ti targets in Ar/C2H2 plasma were studied as a function of the substrate bias voltage, Ti-target current, C2H2 flow rate and pulse frequency by nanoindentation, Raman spe

  1. Review of Magnetron Developments

    Science.gov (United States)

    Vyas, Sandeep Kumar; Verma, Rajendra Kumar; Maurya, Shivendra; Singh, V. V. P.

    2016-09-01

    Magnetrons have been the most efficient high power microwave sources for decades. In the twenty-first century, many of the development works are headed towards the performance improvement of CW industrial magnetrons. In this review article, the development works and techniques, used on different types of magnetrons, for the performance enhancement in the past two decades have been discussed. The article focuses on the state of the art of CW magnetron and the direction it will take in foreseeable future. In addition it also glimpses some of the major variants of magnetron which have further opened up scope in mm-THz spectrum of electromagnetism.

  2. Multi-frequency recirculating planar magnetrons

    Science.gov (United States)

    Greening, Geoffrey B.; Jordan, Nicholas M.; Exelby, Steven C.; Simon, David H.; Lau, Y. Y.; Gilgenbach, Ronald M.

    2016-08-01

    The multi-frequency recirculating planar magnetron (MFRPM) is the first magnetron capable of simultaneous generation of significantly different output frequencies (1 and 2 GHz) in a single operating pulse. Design and simulation of a prototype MFRPM were followed by hardware fabrication and experimental verification using the Michigan Electron Long Beam Accelerator with a Ceramic insulator at -300 kV, 1-5 kA, and 0.14-0.23 T axial magnetic field. Preliminary results demonstrated simultaneous generation of microwave pulses near 1 GHz and 2 GHz at powers up to 44 MW and 21 MW, respectively, with peak total efficiencies up to 9%.

  3. Characteristics of ZnO: Ga thin films on flexible PEN substrate with DC magnetron sputtering%柔性PEN衬底ZnO:Ga薄膜的性能研究

    Institute of Scientific and Technical Information of China (English)

    谢轲; 蔡宏琨; 陶科; 胡居涛; 靳果; 张德贤

    2011-01-01

    以PEN柔性薄膜作为衬底,采用直流对靶磁控溅射的方法,在室温下制备ZnO:Ga薄膜。研究了不同溅射功率和不同溅射压强下制备出的薄膜表现出不同的光学和电学特性。经过溅射压强和溅射功率的优化,获得薄膜厚约900nm、电阻率为7.72×10^-4Ω·cm和可见光平均透过率超过75%的PEN衬底ZnO:Ga薄膜。将其应用于PEN透明柔性衬底非晶硅薄膜太阳电池中,得到了转换效率为6.4%的太阳电池。%In this paper, we investigate ZnO thin films on PEN DC magnetron sputtering at room tempurature. At different sputtering power values and pressures, the ZnO thin films exhibit different optical and electrical properties. Optimizing sputtering power and pressure, we find the optimal ZnO film on PEN suhstrate,whose thickness is 900 nm,resistivity is 7.72×10^-4Ω·cm,and average transmittance in the range 400-800 nm is over 75%. We use it as the surface electrode of amorphous silicon thin film solar cells and finally get flexible cells with conversion efficiency of 6.4 %.

  4. DC/RF magnetron sputter deposition and characterisation of Ca{sub 3}Si{sub 2}N{sub 2}O{sub 4}:Eu{sup 2+} luminescent thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jong, Michiel de, E-mail: m.dejong-1@tudelft.nl; Enter, Victor E. van; Kolk, Erik van der

    2015-08-15

    Luminescent thin films were deposited using reactive magnetron sputtering of Ca, Si (RF) and Eu (DC) in an Ar/N{sub 2} atmosphere. A crystalline Ca{sub 3}N{sub 2}Si{sub 2}O{sub 4} phase was detected using XRD analysis. The molar ratio of Ca to Eu in the film was found to be 3:0.3. Luminescence excitation, emission and decay measurements reveal two broad bands of Eu{sup 2+} emission with local maxima around 550 nm and 630 nm under UV excitation. The measured luminescence is characteristic for Eu{sup 2+} emission in reported Ca{sub 3}Si{sub 2}N{sub 2}O{sub 4} phosphors. This was confirmed with time-resolved luminescence decay measurements that show a two component luminescence decay spectrum characterised by time constants of 0.13 μs and 0.56 μs. EDS measurements showed a metal-to-Si ratio of 3:2.4, metal-to-N ratio of 3:1.5 and a metal-to-O ratio of 3:5.1, where (Ca+Eu) is the metal fraction. The overestimation of Si and O and the underestimation of N is caused by the presence of a crystalline, non-luminescent oxide phase. This was confirmed with XRD, where a weak Ca{sub 2}SiO{sub 4} signal was observed. - Highlights: • A thin film of nitridated Ca, Si and Eu was obtained by reactive sputtering in N{sub 2}/Ar. • By performing rapid thermal anneal, a luminescent calcium silicon oxynitride is formed. • Broad band orange Eu{sup 2+} emission was observed under UV excitation.

  5. Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications

    Science.gov (United States)

    Bociaga, Dorota; Sobczyk-Guzenda, Anna; Szymanski, Witold; Jedrzejczak, Anna; Jastrzebska, Aleksandra; Olejnik, Anna; Jastrzebski, Krzysztof

    2017-09-01

    In this study silicon doped diamond-like carbon (Si-DLC) coatings were synthesized on two substrates: silicon and AISI 316LVM stainless steel using a multi-target DC-RF magnetron sputtering method. The Si content in the films ranged between 4 and 16 at.%, and was controlled by the electrical power applied in RF regime to Si cathode target. The character of the chemical bonds was revealed by FTIR analysis. With the addition of silicon the hydroxyl absorption (band in the range of 3200-3600 cm-1) increased what suggests more hydrophilic character of the coating. There were also observed significant changes in bonding of Si atoms. For low content of dopant, Si-O-Si bond system is predominant, while for the highest content of silicon there is an evidence of the shift to Si-C bonds in close proximity to methyl groups. The Raman spectroscopy revealed that the G peak position is shifted to a lower wavenumber and the ID/IG ratio decreased with increasing Si content, which indicates an increase in the C-sp3 content. Regardless of the coatings' composition, the improvement of hardness in comparison to pure substrate material (AISI 316 LVM) was observed. Although the reduction of the level of hardness from the level of 10.8 GPa for pure DLC to about 9.4 GPa for the silicon doped coatings was observed, the concomitant improvement of films adhesion with higher amount of Si was revealed. Although incorporation of the dopant to DLC coatings increases the number of E. coli cells which adhered to the examined surfaces, the microbial colonisation remains on the level of substrate material. The presented results prove the potential of Si-DLC coatings in biomedical applications from the point of view of their mechanical properties.

  6. Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2004-03-15

    In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In order to solve the problem with the commutation of the load current, a dead time between the incoming and outgoing bidirectional switch is implemented, while a capacitive voltage clamp is used to keep the induced overvoltage to reasonable levels. The energy stored in the clamping capacitor is not wasted as in the dissipative clamps, but is rather transferred back to the primary side for further processing using an auxiliary isolated single-switch converter, i.e. an active clamping technique is used. (au)

  7. Scaled-Up Nonequilibrium Air Plasmas Generated by DC and Pulsed Discharges

    Science.gov (United States)

    2010-09-08

    memory effect - these electrons can remain from previous pulse thanks to the high f . During the short spark pulse, Rp drops down to few hundred ohms ...Morvova, E. Marode, and I. Morva. J. Phys. D: Appl. Phys., 33:3198, 2000. [23] Y Akishev, O Goossens, T Callebaut, C Leys , A Napartovich, and N

  8. Plasma surface treatment to improve surface charge accumulation and dissipation of epoxy resin exposed to DC and nanosecond-pulse voltages

    Science.gov (United States)

    Zhang, Cheng; Lin, Haofan; Zhang, Shuai; Xie, Qin; Ren, Chengyan; Shao, Tao

    2017-10-01

    In this paper, deposition by non-thermal plasma is used as a surface modification technique to change the surface characteristics of epoxy resin exposed to DC and nanosecond-pulse voltages. The corresponding surface characteristics in both cases of DC and nanosecond-pulse voltages before and after the modification are compared and investigated. The measurement of the surface potential provides the surface charge distribution, which is used to show the accumulation and dissipation process of the surface charges. Morphology observations, chemical composition and electrical parameters measurements are used to evaluate the treatment effects. The experimental results show that, before the plasma treatment, the accumulated surface charges in the case of the DC voltage are more than that in the case of the nanosecond-pulse voltage. Moreover, the decay rate of the surface charges for the DC voltage is higher than that for the nanosecond-pulse voltage. However, the decay rate is no more than 41% after 1800 s for both types of voltages. After the plasma treatment, the maximum surface potentials decrease to 57.33% and 32.57% of their values before treatment for the DC and nanosecond-pulse voltages, respectively, indicating a decrease in the accumulated surface charges. The decay rate exceeds 90% for both types of voltages. These changes are mainly attributed to a change in the surface nanostructure, an increase in conductivity, and a decrease in the depth of energy level.

  9. Continuous-flow multi-pulse electroporation at low DC voltages by microfluidic flipping of the voltage space topology

    Science.gov (United States)

    Bhattacharjee, N.; Horowitz, L. F.; Folch, A.

    2016-10-01

    Concerns over biosafety, cost, and carrying capacity of viral vectors have accelerated research into physical techniques for gene delivery such as electroporation and mechanoporation. Advances in microfabrication have made it possible to create high electric fields over microscales, resulting in more efficient DNA delivery and higher cell viability. Continuous-flow microfluidic methods are typically more suitable for cellular therapies where a large number of cells need to be transfected under sterile conditions. However, the existing continuous-flow designs used to generate multiple pulses either require expensive peripherals such as high-voltage (>400 V) sources or function generators, or result in reduced cell viability due to the proximity of the cells to the electrodes. In this paper, we report a continuous-flow microfluidic device whose channel geometry reduces instrumentation demands and minimizes cellular toxicity. Our design can generate multiple pulses of high DC electric field strength using significantly lower voltages (15-60 V) than previous designs. The cells flow along a serpentine channel that repeatedly flips the cells between a cathode and an anode at high throughput. The cells must flow through a constriction each time they pass from an anode to a cathode, exposing them to high electric field strength for short durations of time (the "pulse-width"). A conductive biocompatible poly-aniline hydrogel network formed in situ is used to apply the DC voltage without bringing the metal electrodes close to the cells, further sheltering cells from the already low voltage electrodes. The device was used to electroporate multiple cell lines using electric field strengths between 700 and 800 V/cm with transfection efficiencies superior than previous flow-through designs.

  10. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

    Science.gov (United States)

    Wang, Qi; Wang, Chengbing; Wang, Zhou; Zhang, Junyan; He, Deyan

    2008-12-01

    Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.

  11. High-frequency modelling of a three-phase pulse width modulation inverter towards the dc bus considering line and controller harmonics

    Directory of Open Access Journals (Sweden)

    Saeid Haghbin

    2014-10-01

    Full Text Available Closed-form analytical formulas are provided to calculate the dc bus harmonics of a three-phase sinusoidal pulse width modulation (SPWM inverter. The harmonic analysis is performed by using a double Fourier series approach to determine the dc bus current frequency spectrum. For an arbitrary modulation index and load power factor, the full harmonic components of the inverter dc side current are calculated. Based on the developed analytical model, an equivalent circuit is proposed for the inverter harmonic analysis towards the dc bus. Moreover, the impacts of line harmonics and zero sequence injection in controller towards the dc bus are presented. The results show that the 5th and 7th ac line harmonics on the dc side current is appearance of the 6th harmonic in the dc side. The impact of zero sequence injection to the controller on the dc side is negligible. In addition to analytical formulation, different simulations and extensive measurements performed which the results verified the presented analytical framework.

  12. ELECTRICAL PROPERTIES OF DC REACTIVE MAGNETRON ...

    African Journals Online (AJOL)

    Mgina

    Films optical spectra were fitted with the Drude model to determine their charge carrier ... The use of aluminium doped zinc oxide ... They sputtered ZnO and Al2O3 .... Figure 1(c): The simulated and measured spectrum for the composite film ...

  13. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  14. De virtuele magnetron

    NARCIS (Netherlands)

    Luitjes, H.; Vollebregt, M.; Canters, R.

    2004-01-01

    De virtuele magnetron is computersoftware die de magentron nabootst. De virutele magnetron vereenvoudigt het ontwerpen van verpakkingen voor magnetronmaaltijden en is een hulpmiddel om het opwarmen van de diverse maaltijdcomponenten zodanig te verbeteren dat er minder koude en warme plaatsen in het

  15. Elimination of DC-Link Current Ripple for Modular Multilevel Converters With Capacitor Voltage-Balancing Pulse-Shifted Carrier PWM

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) is attractive for medium- and high-power applications because of its high modularity, availability, and power quality. In this paper, the current ripple on the dc link of the three-phase MMC derived from the phase-shifted carrier-based pulse-width modulation...

  16. Discharge ignition in the diaphragm configuration supplied by DC non-pulsing voltage

    Science.gov (United States)

    Hlochová, L.; Hlavatá, L.; Kozáková, Z.; Krčma, F.

    2016-05-01

    This work deals with the ignition of the discharge in the diaphragm configuration generated in water solutions containing supporting NaCl electrolyte. The reactor has volume of 110 ml and it is made of polycarbonate. HV electrodes made of stainless steel are placed in this reactor. Ceramic (Shapal-MTM) diaphragm is placed in the barrier separating the cathode and the anode space. An electric power source supplies the reactor by constant DC voltage up to 4 kV and electric current up to 300 mA. The discharge ignition is compared in the reactor with different sizes of diaphragms. Measurements are carried out in electrolyte solutions with the same conductivity. Images of plasma streamers and bubble formation are taken by an ICCD camera iStar 734. Electrical characteristics are measured by an oscilloscope LeCroy LT 374 L in order to determine breakdown moments at different experimental conditions.

  17. Role of Duty Ratio in Diamond Growth by Pulsed DC-Bias Enhanced Hot Filament Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    MENG Liang; ZHOU Haiyang; ZHU Xiaodong

    2007-01-01

    In this study, the role of the pulse duty ratio was investigated during the deposition of diamond films in a hot filament chemical vapour deposition reactor with a pulsed-dc biased substrate positively relative to the hot filaments. The voltage-current characteristics showed that the discharge current rose with the increase of biasing voltage, which was modified by the duty ratio. Before deposition, two approaches were adopted for the pre-treatment of the silicon substrates, respectively, and the substrates were scratched by diamond paste or seeded by diamond powders using the so-called 'soft dry polished' technique. Diamond films were deposited under a fixed discharge power by changing the duty ratios. In the first group with scratched substrates, it was found that under a high duty ratio the diamond grew slowly with quite poor nucleation, while in the second case a high duty ratio induced a high deposition rate and good diamond quality. Reactive hydrocarbon species with high energy are essential for the initial nucleation process, which is more effectively achieved at a high biasing voltage in the condition of a low duty ratio. In the film growth process, the large discharge current at a high duty ratio represents an increased concentration of electrons and reactive species as well, promoting the growth of diamond films.

  18. Influence of dc bias on amorphous carbon deposited by pulse laser ablation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Amorphous carbon films were deposited on single-crystalline silicon and K9 glass by pulse laser ablation using different negative substrate bias. Scanning electron microscope (SEM) was used to observe morphology of the surface. Thickness and refractive index of the film deposited on K9 glass were measured by ellipsometry. Micro-hardness of films was measured relatively to single crystal silicon. All films deposited on silicon were analyzed by Raman spectra. All spectra were deconvoluted to three peaks. Line-width ratios varied similarly with bias voltage when the laser energy was kept invariant.

  19. Ion kinetics and self pulsing in DC microplasma discharges at atmospheric and higher pressure

    Science.gov (United States)

    Mahamud, Rajib; Farouk, Tanvir I.

    2016-04-01

    Atmospheric pressure microplasma devices have been the subject of considerable interest and research during the last decade. Most of the operation regime of the plasma discharges studied fall in the ‘abnormal’, ‘normal’ and ‘corona’ modes—increasing and a ‘flat’ voltage current characteristics. However, the negative differential resistance regime at atmospheric and high pressures has been less studied and possesses unique characteristics that can be employed for novel applications. In this work, the role of ion kinetics especially associated with trace impurities; on the self pulsing behavior has been investigated. Detailed numerical simulations have been conducted with a validated model for a helium-nitrogen feed gas mixture. Different oscillatory modes were observed where the discharge was found to undergo complete or partial relaxation. Trace amount of nitrogen was found to significantly alter the pulsing characteristics. External parameters influencing these self oscillations are also studied and aspects of the ion kinetics on the oscillatory behavior are discussed.

  20. Verification and Analysis of Implementing Virtual Electric Devices in Circuit Simulation of Pulsed DC Electrical Devices in the NI MULTISIM 10.1 Environment

    Directory of Open Access Journals (Sweden)

    V. A. Solov'ev

    2015-01-01

    Full Text Available The paper presents the analysis results of the implementation potential and evaluation of the virtual electric devices reliability when conducting circuit simulation of pulsed DC electrical devices in the NI Multisim 10.1environment. It analyses metrological properties of electric measuring devices and sensors of the NI Multisim 10.1environment. To calculate the reliable parameters of periodic non-sinusoidal electrical values based on their physical feasibility the mathematical expressions have been defined.To verify the virtual electric devices a circuit model of the power section of buck DC converter with enabled devices under consideration at its input and output is used as a consumer of pulse current of trapezoidal or triangular form. It is used as an example to show a technique to verify readings of virtual electric measuring devices in the NI Multisim 10.1environment.It is found that when simulating the pulsed DC electric devices to measure average and RMS voltage supply and current consumption values it is advisable to use the probe. Electric device power consumption read from the virtual power meter is equal to its average value, and its displayed power factor is inversely proportional to the input current form factor. To determine the RMS pulsed DC current by ammeter and multi-meter it is necessary to measure current by these devices in DC and AC modes, and then determine the RMS value of measurement results.Virtual electric devices verification has proved the possibility of their application to determine the energy performance of transistor converters for various purposes in the circuit simulation in the NI 10.1 Multisim environment, thus saving time of their designing.

  1. Perspective: Is there a hysteresis during reactive High Power Impulse Magnetron Sputtering (R-HiPIMS)?

    Science.gov (United States)

    Strijckmans, K.; Moens, F.; Depla, D.

    2017-02-01

    This paper discusses a few mechanisms that can assist to answer the title question. The initial approach is to use an established model for DC magnetron sputter deposition, i.e., RSD2013. Based on this model, the impact on the hysteresis behaviour of some typical HiPIMS conditions is investigated. From this first study, it becomes clear that the probability to observe hysteresis is much lower as compared to DC magnetron sputtering. The high current pulses cannot explain the hysteresis reduction. Total pressure and material choice make the abrupt changes less pronounced, but the implantation of ionized metal atoms that return to the target seems to be the major cause. To further substantiate these results, the analytical reactive sputtering model is coupled with a published global plasma model. The effect of metal ion implantation is confirmed. Another suggested mechanism, i.e., gas rarefaction, can be ruled out to explain the hysteresis reduction. But perhaps the major conclusion is that at present, there are too little experimental data available to make fully sound conclusions.

  2. Magnetron sputtering source

    Science.gov (United States)

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  3. An experimental study on discharge characteristics in a pulsed-dc atmospheric pressure CH3OH/Ar plasma jet

    Science.gov (United States)

    Qian, Muyang; Liu, Sanqiu; Yang, Congying; Pei, Xuekai; Lu, Xinpei; Zhang, Jialiang; Wang, Dezhen

    2016-10-01

    Recently, C/H/Ar plasma discharges found enormous potential and possibility in carbonaceous compounds conversion and production. In this work, a pulsed-dc CH3OH/Ar plasma jet generated at atmospheric pressure is investigated by means of optical and electrical diagnosis concerning the variation of its basic parameters, absolute concentration of OH radicals, and plasma temperature with different CH3OH/Ar volume ratios, in the core region of discharge with needle-to-ring electrode configuration. The voltage-current characteristics are also measured at different CH3OH/Ar ratios. Laser-induced fluorescence (LIF) results here show that only small amounts of added methanol vapor to argon plasma (about 0.05% CH3OH/Ar volume ratio) is favorable for the production of OH radicals. The optical emission lines of CH, CN, and C2 radicals have been detected in the CH3OH/Ar plasma. And, the plasma temperatures increase with successive amount of added methanol vapor to the growth plasma. Moreover, qualitative discussions are presented regarding the mechanisms for methanol dissociation and effect of the CH3OH component on the Ar plasma discharge at atmospheric pressure.

  4. Performance of a 4 Kelvin pulse-tube cooled cryostat with dc SQUID amplifiers for bolometric detector testing

    CERN Document Server

    Barron, Darcy; Keating, Brian; Quillin, Ron; Stebor, Nathan; Wilson, Brandon

    2013-01-01

    The latest generation of cosmic microwave background (CMB) telescopes is searching for the undetected faint signature of gravitational waves from inflation in the polarized signal of the CMB. To achieve the unprecedented levels of sensitivity required, these experiments use arrays of superconducting Transition Edge Sensor (TES) bolometers that are cooled to sub-Kelvin temperatures for photon-noise limited performance. These TES detectors are read out using low- noise SQUID amplifiers. To rapidly test these detectors and similar devices in a laboratory setting, we constructed a cryogenic refrigeration chain consisting of a commercial two-stage pulse-tube cooler, with a base temperature of 3 K, and a closed-cycle 3He/4He/3He sorption cooler, with a base temperature of 220 mK. A commercial dc SQUID system, with sensors cooled to 4 K, was used as a highly-sensitive cryogenic ammeter. Due to the extreme sensitivity of SQUIDs to changing magnetic fields, there are several challenges involving cooling them with puls...

  5. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  6. Comparison of hydrophilic properties of TiO{sub 2} thin films prepared by sol-gel method and reactive magnetron sputtering system

    Energy Technology Data Exchange (ETDEWEB)

    Nam, S.-H., E-mail: askaever@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, S.-J.; Jung, C.-K. [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Boo, J.-H., E-mail: jhboo@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Sicha, J.; Herman, D.; Musil, J.; Vlcek, J. [Department of Physics, University of West Bohemia, Univerzitni 22, 306 14 Plzen (Czech Republic)

    2011-08-01

    This article reports on preparation, characterization and comparison of TiO{sub 2} films prepared by sol-gel method using the titanium isopropoxide sol (TiO{sub 2} coating sol 3%) as solvent precursor and reactive magnetron sputtering from substoichiometric TiO{sub 2-x} targets of 50 mm in diameter. Dual magnetron supplied by dc bipolar pulsed power source was used for reactive magnetron sputtering. Depositions were performed on unheated glass substrates. Comparison of photocatalytic properties was based on measurements of hydrophilicity, i.e. evaluation of water contact angle on the film surface after UV irradiation. It is shown, that TiO{sub 2} films prepared by the sol-gel method exhibited higher hydrophilicity in the as-deposited state but has significant deterioration of hydrophilicity during aging, compared to TiO{sub 2} films prepared by magnetron sputtering. To explain this effect AFM, SEM and high resolution XPS measurements were performed. It is shown that the deterioration of hydrophilicity of sol-gel TiO{sub 2} films can be suppressed if as-deposited films are exposed to the plasma of microwave oxygen discharge.

  7. Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazadevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2017-05-01

    Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verified with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.

  8. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    Science.gov (United States)

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.

  9. Diagnostics of atmospheric-pressure pulsed-dc discharge with metal and liquid anodes by multiple laser-aided methods

    Science.gov (United States)

    Urabe, Keiichiro; Shirai, Naoki; Tomita, Kentaro; Akiyama, Tsuyoshi; Murakami, Tomoyuki

    2016-08-01

    The density and temperature of electrons and key heavy particles were measured in an atmospheric-pressure pulsed-dc helium discharge plasma with a nitrogen molecular impurity generated using system with a liquid or metal anode and a metal cathode. To obtain these parameters, we conducted experiments using several laser-aided methods: Thomson scattering spectroscopy to obtain the spatial profiles of electron density and temperature, Raman scattering spectroscopy to obtain the neutral molecular nitrogen rotational temperature, phase-modulated dispersion interferometry to determine the temporal variation of the electron density, and time-resolved laser absorption spectroscopy to analyze the temporal variation of the helium metastable atom density. The electron density and temperature measured by Thomson scattering varied from 2.4  ×  1014 cm-3 and 1.8 eV at the center of the discharge to 0.8  ×  1014 cm-3 and 1.5 eV near the outer edge of the plasma in the case of the metal anode, respectively. The electron density obtained with the liquid anode was approximately 20% smaller than that obtained with the metal anode, while the electron temperature was not significantly affected by the anode material. The molecular nitrogen rotational temperatures were 1200 K with the metal anode and 1650 K with the liquid anode at the outer edge of the plasma column. The density of helium metastable atoms decreased by a factor of two when using the liquid anode.

  10. The development of a nanostructured, graded multilayer Cr-CrxNy-Cr1-xAlxN coating produced by pulsed closed field unbalanced magnetron sputtering (P-CFUBMS) for use in aluminum pressure die casting dies.

    Science.gov (United States)

    Lin, Jianliang; Mishra, Brajendra; Myers, Sterling; Ried, Peter; Moore, John J

    2009-06-01

    The main objective of this research is to design an optimized 'coating system' that extends die life by minimizing premature die failure. The concept of the multilayer coating system with desired combinations of different kinds of single-layer coatings was introduced. A pulsed closed field unbalanced magnetron sputtering (P-CFUBMS) deposition system has been used to deposit Cr-CrxNy-Cr1-xAlxN compositionally graded multilayer coating structures. In this study, three power law scenarios have been adopted to vary the aluminum concentration in the graded Cr1-xAlxN layer: (i) p = 1, the aluminum concentration was increased linearly in the Cr1-xAlxN layer. (ii) p = 0.2, the Cr1-xAlxN layer is an aluminum-rich graded layer, and (iii) p = 2, the Cr1-xAlxN layer is a chromium-rich graded layer. It was found that all the graded coatings exhibit lower residual stress and higher adhesion strength than the homogeneous Cr1-xAlxN (x = 0.585) film. However, different power law grading architectures have significant influence on the hardness and wear resistance of the films. When p = 2 and p = 1, the graded films exhibited relatively low hardness values (24 and 26 GPa respectively) and high COF (0.55 to 0.60). When p = 0.2 the graded film exhibited both high hardness (34 GPa) and good wear resistance (COF = 0.45) due to the structural consistency in the graded zone. The paper discusses the correlation between the pulsing parameters and coating architecture with the resulting nanostructure and tribological properties of this Cr-CrxNy-Cr1-xAlxN coating system.

  11. Observation of self-magnetic field relaxations in Bi2223 and Y123 HTS tapes after over-current pulse and DC current operation

    Science.gov (United States)

    Tallouli, M.; Sun, J.; Chikumoto, N.; Otabe, E. S.; Shyshkin, O.; Charfi-Kaddour, S.; Yamaguchi, S.

    2016-07-01

    The development of power transmission lines based on long-length HTS tapes requires the production of high quality tapes. Due to fault conditions, technical mistakes and human errors during the operation of a DC power transmission line, an over-current pulse, several times larger than the rated current, could occur. To study the effect of such over-current pulses on the transport current density distribution in the HTS tapes, we simulated two start-up scenarios for one BSCCO and two YBCO tapes. The first start-up scenario is an initial over-current pulse during which the transport current was turned on rapidly, rising to 900 A during the first milliseconds, then reduced to a 100 A DC current. The second start-up scenario is normal operation, and involved increasing the transport current slowly from 0 A to 100 A at a rate of 1 A/s. For both scenarios, we then measured the vertical component of the self-magnetic field by means of a Hall probe above the tape, and afterward, by solving a linear equation of the inverse problem we obtain the current density profiles. We observe a change of the self-magnetic field above the edge of the BSCCO and YBCO tapes during 30 min after the 5 ms of over-current pulse and during the normal operation. The current density profiles are peaked in the centre for over-current pulse, and more peaked around the edge of the HTS tape for normal operation, which means that the limited time over-current pulse changes the current density profiles of the HTS tapes. We observe also a loop of current for YBCO tapes and we show the role of the HTS tape stabilizer.

  12. FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target.

    Science.gov (United States)

    Liao, Bo-Huei; Chan, Shih-Hao; Lee, Cheng-Chung; Kuo, Chien-Cheng; Chen, Sheng-Hui; Chiang, Donyau

    2014-02-01

    Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63×10(-3)  Ω cm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even lower resistivity to 8.42×10(-4)  Ω cm and higher average transmittance up to 81.1% in the visible region.

  13. Ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

    DEFF Research Database (Denmark)

    Sillassen, M.; Eklund, P.; Sridharan, M.;

    2009-01-01

    Thermally stable, stoichiometric, cubic yttria-stabilized zirconia (YSZ) thin-film electrolytes have been synthesized by reactive pulsed dc magnetron sputtering from a Zr–Y (80/20 at. %) alloy target. Films deposited at floating potential had a texture. Single-line profile analysis of the 111 x.......5% at bias voltages of −175 and −200 V with additional incorporation of argon. The films were thermally stable; very limited grain coarsening was observed up to an annealing temperature of 800 °C. Temperature-dependent impedance spectroscopy analysis of the YSZ films with Ag electrodes showed that the in......-plane ionic conductivity was within one order of magnitude higher in films deposited with substrate bias corresponding to a decrease in grain size compared to films deposited at floating potential. This suggests that there is a significant contribution to the ionic conductivity from grain boundaries...

  14. BN coatings deposition by magnetron sputtering of B and BN targets in electron beam generated plasma

    Science.gov (United States)

    Kamenetskikh, A. S.; Gavrilov, N. V.; Koryakova, O. V.; Cholakh, S. O.

    2017-05-01

    Boron nitride coatings were deposited by reactive pulsed magnetron sputtering of B and BN targets (50 kHz, 10 µs for B; 13.56 MHz for BN) at 2-20 mA/cm2 ion current density on the substrate. The effect of electron beam generated plasma on characteristics of magnetron discharge and phase composition of coatings was studied.

  15. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Science.gov (United States)

    Sulaeman, M. Y.; Widita, R.

    2014-09-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20-100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of -1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  16. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Energy Technology Data Exchange (ETDEWEB)

    Sulaeman, M. Y.; Widita, R. [Department of Physics, Nuclear Physics and Biophysics Research Division, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung (Indonesia)

    2014-09-30

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  17. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  18. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    Science.gov (United States)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  19. DC to DC converters: operation; Hacheurs: fonctionnement

    Energy Technology Data Exchange (ETDEWEB)

    Bernot, F. [Ecole d' Ingenieurs de Tours, 37 (France)

    2002-05-01

    This article deals with pulse width modulation (PWM) and pulse position modulation (PPM) DC to DC converters. A tri-phase PWM converter is made of 6 simple DC/DC converters grouped together into 3 reversible converters of the same type: 1 - single-quadrant voltage lowering converters (hydraulic analogy, study with ideal elements, full scheme with input and output filters); 2 - single-quadrant voltage raising converters (hydraulic analogy, operation); 3 - two quadrants reversible converters (structure construction, quadrants of operation, reversible converter connected to a DC motor); 4 - four-quadrants reversible converters; 5 - other converters structure (current converters and converters with intermediate storage, asymmetrical converters, converters with capacitive storage, insulated converters, resonating converters, status); 6 - conclusion. (J.S.)

  20. Monte Carlo Simulations of High-speed, Time-gated MCP-based X-ray Detectors: Saturation Effects in DC and Pulsed Modes and Detector Dynamic Range

    Energy Technology Data Exchange (ETDEWEB)

    Craig Kruschwitz, Ming Wu, Ken Moy, Greg Rochau

    2008-10-31

    We present here results of continued efforts to understand the performance of microchannel plate (MCP)–based, high-speed, gated, x-ray detectors. This work involves the continued improvement of a Monte Carlo simulation code to describe MCP performance coupled with experimental efforts to better characterize such detectors. Our goal is a quantitative description of MCP saturation behavior in both static and pulsed modes. We have developed a new model of charge buildup on the walls of the MCP channels and measured its effect on MCP gain. The results are compared to experimental data obtained with a short-pulse, high-intensity ultraviolet laser; these results clearly demonstrate MCP saturation behavior in both DC and pulsed modes. The simulations compare favorably to the experimental results. The dynamic range of the detectors in pulsed operation is of particular interest when fielding an MCP–based camera. By adjusting the laser flux we study the linear range of the camera. These results, too, are compared to our simulations.

  1. Theory of the magnetronic laser

    CERN Document Server

    Pardy, M

    2003-01-01

    We determine the total power of radiation of electron moving in the planar magnetron fields and the power spectrum generated by a single electron and by a system of N electrons moving coherently in the planar magnetron. We argue that for large N and high intensity of electric and magnetic fields, the power of radiation of such magnetronic laser, MAL, can be sufficient for application in the physical, chemical, biological and medicine sciences. In medicine, the magnetronic laser, can be used for the therapy of the localized cancer tumors. The application of MAL in CERN as an ion source for LHC is not excluded.

  2. Pulse

    Science.gov (United States)

    ... resting for at least 10 minutes. Take the exercise heart rate while you are exercising. ... pulse rate can help determine if the person's heart is pumping. Pulse ... rate gives information about your fitness level and health.

  3. A High-power 650 MHz CW Magnetron Transmitter for Intensity Frontier Superconducting Accelerators

    CERN Document Server

    Treado, T A; Nagaitsev, S; Pasquinelli, R J; Yakovlev, V P; Flanagan, G; Johnson, R P; Kazakevich, G M; Marhauser, F; Neubauer, M L

    2013-01-01

    A concept of a 650 MHz CW magnetron transmitter with fast control in phase and power, based on two-stage injection-locked CW magnetrons, has been proposed to drive Superconducting Cavities (SC) for intensity-frontier accelerators. The concept is based on a theoretical model considering a magnetron as a forced oscillator and experimentally verified with a 2.5 MW pulsed magnetron. To fulfill fast control of phase and output power requirements of SC accelerators, both two-stage injection-locked CW magnetrons are combined with a 3-dB hybrid. Fast control in output power is achieved by varying the input phase of one of the magnetrons. For output power up to 250 kW we expect the output/input power ratio to be about 35 to 40 dB in CW or quasi-CW mode with long pulse duration. All magnetrons of the transmitter should be based on commercially available models to decrease the cost of the system. An experimental model using 1 kW, CW, S-band, injection-locked magnetrons with a 3-dB hybrid combiner has been developed and ...

  4. A short pulse (7 μs FWHM) and high repetition rate (dc-5kHz) cantilever piezovalve for pulsed atomic and molecular beams

    NARCIS (Netherlands)

    Irimia, D.; Dobrikov, D.; Kortekaas, R.; Voet, H.; Ende, D.A. van den; Groen, W.A.; Janssen, M.H.M.

    2009-01-01

    In this paper we report on the design and operation of a novel piezovalve for the production of short pulsed atomic or molecular beams. The high speed valve operates on the principle of a cantilever piezo. The only moving part, besides the cantilever piezo itself, is a very small O-ring that forms t

  5. Effects of adsorbed proteins, an antifouling agent and long-duration DC voltage pulses on the impedance of silicon-based neural microelectrodes.

    Science.gov (United States)

    Sommakia, Salah; Rickus, Jenna L; Otto, Kevin J

    2009-01-01

    The successful use of implantable neural microelectrodes as neuroprosthetic devices depends on the mitigation of the reactive tissue response of the brain. One of the factors affecting the ultimate severity of the reactive tissue response and the in vivo electrical properties of the microelectrodes is the initial adsorption of proteins onto the surface of the implanted microelectrodes. In this study we quantify the increase in microelectrode impedance magnitude at physiological frequencies following electrode immersion in a 10% bovine serum albumin (BSA) solution. We also demonstrate the efficacy of a common antifouling molecule, poly(ethylene glycol) (PEG), in preventing a significant increase in microelectrode impedance. In addition, we show the feasibility of using long-duration DC voltage pulses to remove adsorbed proteins from the microelectrode surface.

  6. Analysis of Current Pulses in HeLa-Cell Permeabilization Due to High Voltage DC Corona Discharge.

    Science.gov (United States)

    Chetty, Nevendra K; Chonco, Louis; Ijumba, Nelson M; Chetty, Leon; Govender, Thavendran; Parboosing, Raveen; Davidson, Innocent E

    2016-09-01

    Corona discharges are commonly utilized for numerous practical applications, including bio-technological ones. The corona induced transfer of normally impermeant molecules into the interior of biological cells has recently been successfully demonstrated. The exact nature of the interaction of the corona discharge with a cell membrane is still unknown, however, previous studies have suggested that it is either the electric fields produced by ions or the chemical interaction of the reactive species that result in the disruption of the cell membrane. This disruption of the cell membrane allows molecules to permeate into the cell. Corona discharge current constitutes a series of pulses, and it is during these pulses that the ions and reactive species are produced. It stands to reason, therefore, that the nature of these corona pulses would have an influence on the level of cell permeabilization and cell destruction. In this investigation, an analysis of the width, rise-time, characteristic frequencies, magnitude, and repetition rate of the nanosecond pulses was carried out in order to establish the relationship between these factors and the levels of cell membrane permeabilization and cell destruction. Results obtained are presented and discussed.

  7. DC-magnetron sputtering of ZnO:Al films on (00.1)Al{sub 2}O{sub 3} substrates from slip-casting sintered ceramic targets

    Energy Technology Data Exchange (ETDEWEB)

    Miccoli, I., E-mail: ilio.miccoli@unisalento.it [Photovoltaics R and D Lab, Alfa Impianti S.r.l., Via Baden Powell, I-73044 Galatone, Lecce (Italy); Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy); Spampinato, R.; Marzo, F. [Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy); Prete, P. [Istituto per la Microelettronica e Microsistemi del CNR, Unità di Lecce, Via Monteroni, I-73100 Lecce (Italy); Lovergine, N. [Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce (Italy)

    2014-09-15

    Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al{sub 2}O{sub 3} (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al{sub 2}O{sub 3} (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl{sub 2}O{sub 4} phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence

  8. Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

    Energy Technology Data Exchange (ETDEWEB)

    Chan, K.-Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)], E-mail: k.y.chan@fz-juelich.de; Luo, P.-Q.; Zhou, Z.-B. [Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai (China); Tou, T.-Y.; Teo, B.-S. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2009-03-01

    Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.

  9. Influence of a Weak Field of Pulsed DC Electricity on the Behavior and Incidence of Injury in Adult Steelhead and Pacific Lamprey, Final Report.

    Energy Technology Data Exchange (ETDEWEB)

    Mesa, Matthew

    2009-02-13

    electrofishing operations typically use high voltage and amperage settings and a variety of waveforms, pulse widths (PW), and pulse frequencies (PF), depending on conditions and target species. For example, when backpack electrofishing for trout in a small stream, one might use settings such as 500 V pulsed DC, a PW of 1 ms, and a PF of 60 Hz. In contrast, the electrical barrier proposed by SRI will produce electrical conditions significantly lower than those used in electrofishing, particularly for PW and PF (e.g., PW ranging from 300-1,000 {micro}s and PF from 2-3 Hz). Further, voltage gradients (in V/cm) are predicted to be lower in the electric barrier than those produced during typical electrofishing. Although the relatively weak, pulsed DC electric fields to be produced by the barrier may be effective at deterring pinnipeds, little, if anything, is known about the effects of such low intensity electrical fields on fish behavior. For this research, we evaluated the effects of weak, pulsed DC electric currents on the behavior of adult steelhead and Pacific lamprey and the incidence of injury in steelhead only. In a series of laboratory experiments, we: (1) documented the rate of passage of fish over miniature, prototype electric barriers when they were on and off; (2) determined some electric thresholds beyond which fish would not pass over the barrier; and (3) assessed the incidence and severity of injury in steelhead exposed to relatively severe electrical conditions. The results of this study should be useful for making decisions about whether to install electrical barriers in the lower Columbia River, or elsewhere, to reduce predation on upstream migrating salmonids and other fishes by marine pinnipeds.

  10. 一种基于Buck软换流型DC-DC电路脉冲TIG焊机%A type of pulse TIG welding power supply based on Buck DC-DC circuit integrated soft current-change technology

    Institute of Scientific and Technical Information of China (English)

    汪殿龙; 张志洋; 李亚博

    2014-01-01

    针对传统逆变式脉冲TIG焊机在冷修补焊接时修复精度低、热输入量大、零部件的热变形量大等缺点,设计了一种基于Buck软换流型DC-DC主电路的脉冲TIG焊机,控制电路可以实现焊接脉冲电流、脉冲频率、脉冲时间的调节,并输出连续脉冲群.实验结果表明,软换相电路有效降低了开关损耗和电压电流尖峰;控制特性较好,脉冲电流上升和下降时间小,输出电流平稳.该焊机实现了脉冲电流、脉冲时间、脉冲频率控制精确,适合于低热输入量时的冷修补焊接场合.

  11. A Two-stage injection-locked magnetron for accelerators with superconducting cavities

    CERN Document Server

    Kazakevich, Grigory; Flanagan, Gene; Marhauser, Frank; Neubauer, Mike; Yakovlev, Vyacheslav; Chase, Brian; Nagaitsev, Sergey; Pasquinelli, Ralph; Solyak, Nikolay; Tupikov, Vitali; Wolff, Daniel

    2013-01-01

    A concept for a two-stage injection-locked CW magnetron intended to drive Superconducting Cavities (SC) for intensity-frontier accelerators has been proposed. The concept considers two magnetrons in which the output power differs by 15-20 dB and the lower power magnetron being frequency-locked from an external source locks the higher power magnetron. The injection-locked two-stage CW magnetron can be used as an RF power source for Fermilab's Project-X to feed separately each of the 1.3 GHz SC of the 8 GeV pulsed linac. We expect output/locking power ratio of about 30-40 dB assuming operation in a pulsed mode with pulse duration of ~ 8 ms and repetition rate of 10 Hz. The experimental setup of a two-stage magnetron utilising CW, S-band, 1 kW tubes operating at pulse duration of 1-10 ms, and the obtained results are presented and discussed in this paper.

  12. Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources

    CERN Document Server

    Le Pimpec, F; Paraliev, M; Ganter, R; Hauri, C; Ivkovic, S; 10.1116/1.3478300

    2010-01-01

    For the SwissFEL project, an advanced high gradient low emittance gun is under development. Reliable operation with an electric field, preferably above 125 MV/m at a 4 mm gap, in the presence of an UV laser beam, has to be achieved in a diode configuration in order to minimize the emittance dilution due to space charge effects. In the first phase, a DC breakdown test stand was used to test different metals with different preparation methods at voltages up to 100 kV. In addition high gradient stability tests were also carried out over several days in order to prove reliable spark-free operation with a minimum dark current. In the second phase, electrodes with selected materials were installed in the 250 ns FWHM, 500 kV electron gun and tested for high gradient breakdown and for quantum efficiency using an ultra-violet laser.

  13. Up-scaled Teer-UDP850/4 Unbalanced Magnetron Deposition System Used for Mass-Production of CrTiAlN Hard Coatings

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-jun; YANG Shi-cai; JIANG Bai-ling; BAI Li-jing; CHEN Di-chun; WEN Xiao-bin; TEER D.G.

    2004-01-01

    Up-scaled deposition process of Teer-UDP850/4 has been established and used for massive production of CrTiAlN hard coatings in applications of anti-wear, cutting and forming tools. This deposition system uses four magnetrons that are arranged by unbalanced magnets to form closed magnetic field enabling the system running in high current density.Elemental metals of Cr, Ti and Al are used as the target materials which are co-deposited with nitrogen forming multialloy nitride, nanoscale multi-layer or superlattice hard coatings. The substrate turntable is designed as planet rotation mechanism with three folds so that components or tools with complicate geometry can be uniformly coated onto all their surfaces and cutting edges. The power units for the magnetrons are straight dc whilst the substrate is biased by pulsed dc. Two solid heaters are installed in the system to enable running a wide range of deposition temperature from 200℃ to 500℃. The pumping system is powerful that incorporated with a polycold to pump the system to a good vacuum in a very short time. A front door and a movable substrate table are available to benefit easily loading and unloading. Deposition procedure,properties and performance of the coatings is also presented in this paper.

  14. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    Energy Technology Data Exchange (ETDEWEB)

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  15. High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

    Science.gov (United States)

    Kiziridi, P. P.; Ozur, G. E.

    2017-05-01

    A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

  16. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Kubart, T.; Aijaz, A.

    2017-05-01

    The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on a titanium surface from the evolution of discharge characteristics in an argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. The thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 1016 cm-2, much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of a truly stoichiometric compound during the discharge off-time. The compound has a very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning.

  17. Studies on the reactive deposition of TiN{sub x} and TiO{sub x} in a DC magnetron plasma; Untersuchungen zur reaktiven Abscheidung von TiN{sub x} und TiO{sub x} in einem DC-Magnetronplasma

    Energy Technology Data Exchange (ETDEWEB)

    Wrehde, Stefan

    2009-10-30

    In the present thesis experiments in a magnetron coating plasma on the (reactive) deposition of Ti, Ti{sub x}, and TiO{sub x} layers were performed. The aim was to meet by correlation of measurements of the ion and energy current on the substrate during the coating procedure with studies of the properties of the deposed layers statements about the connections of deposition conditions and layer properties. The layers deposed in the argon plasma without reactive gas contained beside titanium as main component also small concentrations of oxygen in the range of 8..15%, no completely pure respectively metallic titanium layers could be deposed. In the layers deposed in the argon-nitrogen plasma the increasing nitrogen admixture to the plasma leads mto an increasing nitridation of the layers. The measurements of the crystal structure show higher macroscopical stresses in the layers deposed in the unbalanced mode. From the combination of the higher thicknesses and densities of the layers deposed in the unbalanced mode in this operation mode of the magnetron higher deposition rates result. In the argon-oxygen plasma at increasing oxygen part it comes to a distinct increasement of the oxygen concentration at simultaneous decreasement of the relative titanium concentration in the deposed layers. The deposition in the unbalanced mode leads against the that in the balanced mode to a slightly lower oxygen concentration in the layers. The measurements of the crystal structure show also a lower oxygen insertion and tendentially lower macroscopical stresses in the layers deposed in the unbalanced mode. The measured densities of the layers deposed in the unbalanced mode are distinctly lower than to be expected, and above all smaller than those of the layers deposed in the balanced mode.

  18. Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

    Science.gov (United States)

    Jacobs, Andrew

    2016-09-01

    At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

  19. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Science.gov (United States)

    Ratova, Marina; Kelly, Peter J.; West, Glen T.; Tosheva, Lubomira; Edge, Michele

    2017-01-01

    Titanium dioxide - bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV-vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO2 evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO2 nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these tests confirmed that such enhancement of the photocatalytic properties is due to more efficient photogenerated charge carrier separation, as well as to the contribution of the intrinsic photocatalytic properties of Bi2WO6.

  20. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NARCIS (Netherlands)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G.H.

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to an

  1. Plant regeneration from pulse-treated longitudinally sliced half cotyledon node explants of Turkish ochrus chickling [Lathyrus ochrus (L. D.C.

    Directory of Open Access Journals (Sweden)

    Saglam S.

    2012-01-01

    Full Text Available The forage legume ochrus chickling [Lathyrus ochrus (L. D.C.] which is distributed in the Mediterranean region, is gaining importance in terms of economy and agriculture in Turkey. However, the full potential of the legume has yet to be realized due to the presence of neurotoxin, β-N-oxalyl-L-a, β-diaminopropionic acid (ODAP causing lathyrism. This study aimed to develop an efficient micropropagation system using longitudinally sliced cotyledon node explants for use in Agrobacterium-mediated genetic transformation in the future. The results show that the maximum number of shoots per explant was achieved on MS medium solidified with 8 g/l isubgol gelled medium containing 0.30 mg/l BA-0.2 mg/l NAA. Well-developed shoots were rooted by pulse treatment with 50 mg/l IBA and culturing on an 8 g/l isubgol gel solidified MS medium. The results showed 60% rooting in the treated shoots. The rooted plantlets were transferred to pots containing sand and organic matter and acclimatized.

  2. Bias-magnetron sputtering of tungsten carbide coatings on steel; Bias-Magnetron Sputtern von Wolframkarbid-Schichten auf Stahl

    Energy Technology Data Exchange (ETDEWEB)

    Gubisch, M.; Spiess, L.; Romanus, H.; Schawohl, J.; Knedlik, C. [Technische Universitaet Ilmenau, Institut fuer Werkstofftechnik/ Zentrum fuer Mikro- und Nanotechnologien (ZMN), Ilmenau (Germany)

    2004-11-01

    The influence of bias voltage between 0 V to -800 V on the properties of dc and rf magnetron sputtered tungsten carbide coatings with 1 {mu}m thickness on cold work steel 90MnCrV8 were determined. The coatings were analysed with SEM, AFM, EDX, XRD and micro hardness tester. The morphology, the chemical composition, the phase transformation and the hardness of the deposited layers were appropriated. Non-stoechiometric cubic phase of tungsten carbide WC{sub 1-x} with <100> preferred orientation formed by non reactive magnetron sputtering without ion bombardment. Chemical composition, crystallinity, preferred orientation, morphology and phases are influence by variation of bias voltage. These changes in coating properties results in significant variation of hardness between 8 GPa and 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.) [German] In dieser Arbeit wird der Einfluss der Biasspannung im Bereich von 0 V bis -800 V auf die Eigenschaften von 1 {mu}m dicken DC und RF Magnetron gesputterten Wolframkarbidschichten auf niedriglegierten Kaltarbeitsstahl 90MnCrV8 untersucht. Die Schichten wurden mittels REM, EDX, AFM, Universalhaertepruefgeraet und XRD hinsichtlich der wichtigsten Schichteigenschaften wie Morphologie, Phasenausbildung, Vorzugsorientierung, Universalhaerte und chemischer Zusammensetzung charakterisiert. Ohne zusaetzlichen Ionenbeschuss bildet sich beim nichtreaktiven Magnetron Sputtern die nicht stoechiometrische kubische Phase des Wolframkarbids WC{sub 1-x} mit einer <100>-Orientierung aus. In Abhaengigkeit der Biasspannung wird die chemischen Zusammensetzung, Kristallinitaet, Vorzugsorientierung, Morphologie und die Phasenausbildung beeinflusst. Die Veraenderungen der genannten Schichteigenschaften fuehrten zu signifikanten Haerteaenderungen im Bereich von 8 GPa und 20 GPa. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  3. NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M.; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2016-10-21

    A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operation cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.

  4. Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

    Science.gov (United States)

    Gruber, Robert P.; Gott, Robert W.

    1991-01-01

    In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

  5. Up-scaled Teer-UDP850/4 Unbalanced Magnetron Deposition System Used for Mass-Production of CrTiAlN Hard Coatings

    Institute of Scientific and Technical Information of China (English)

    ZHANGGuo-jun; YANGShi-cai; JIANGBai-ling; BAILi-jing; CHENDi-chum; WENXiao-bin; TEERD.G.

    2004-01-01

    Up-sca]ed deposition process of Teer-UDP850/4 has been established and used for massive production of CrTiAlN hard coatings in applications of anti-wear, cutting and forming tools. This deposition system uses four magnetrons that are arranged by unbalanced magnets to fomt closed magnetic field enabling the system running in high current density. Elemental metals of Cr, Ti and Al are used as the target materials which are co-deposited with nitrogen forming nlultialloy nitride, nanoscale multi-layer or superlattice hard coatings. The stthstrate turntable is designed as planet rotation mechanism with three folds so that components or tools with complicate geometry can be uniformly coated onto all their surfaces and cutting edges. The pawer units for the magnetrons are straight dc whilst the substrate is biased by pulsed de. Two solid heaters are installed in the system to enable running a wide range of deposition temperature from 200℃ to 500℃. The pumping system is powerful that incorporated with a polycold to pump the system to a good vacuum in a very shori time. A front door and a movable substrate table are available to benefit easily loading and unloading. Deposition procedure. properties and performance of the coatings is also presented in this paper.

  6. A Novel FPSM Controller for DC-DC Switching Converters

    Institute of Scientific and Technical Information of China (English)

    Yong Feng; Shun-Ping Wang; Ping Luo; Quan-Ming Niu; Zhao-Ji Li

    2007-01-01

    This paper presents a novel fuzzy pulse skip modulation (FPSM) controller for switching direct current to direct current (DC-DC) converters based on fuzzy ratiocination modeling approach. Owing to the optimal consideration during the design and the nonlinear characteristics of the controller, improved dynamic responses of the FPSM controller can be achieved over conventional controllers. Compared with conventional proportion integral derivative (PID) control, FPSM control has 60% lower overshoot and 10% lower setting time under the same input voltage and output load change. The presented approach is general and can be applied to other types of DC-DC converters.

  7. Omnidirectional photonic band gap in magnetron sputtered TiO{sub 2}/SiO{sub 2} one dimensional photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jena, S., E-mail: shuvendujena9@gmail.com [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Tokas, R.B.; Sarkar, P. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Misal, J.S.; Maidul Haque, S.; Rao, K.D. [Photonics & Nanotechnology Section, BARC-Vizag, Autonagar, Atomic & Molecular Physics Division, Bhabha Atomic Research Centre facility, Visakhapatnam 530 012 (India); Thakur, S.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2016-01-29

    One dimensional photonic crystal (1DPC) of TiO{sub 2}/SiO{sub 2} multilayer has been fabricated by sequential asymmetric bipolar pulsed dc magnetron sputtering of TiO{sub 2} and radio frequency magnetron sputtering of SiO{sub 2} to achieve wide omnidirectional photonic band in the visible region. The microstructure and optical response of the TiO{sub 2}/SiO{sub 2} photonic crystal have been characterized by atomic force microscopy, scanning electron microscopy and spectrophotometry respectively. The surface of the photonic crystal is very smooth having surface roughness of 2.6 nm. Reflection and transmission spectra have been measured in the wavelength range 300 to 1000 nm for both transverse electric and transverse magnetic waves. Wide high reflection photonic band gap (∆ λ = 245 nm) in the visible and near infrared regions (592–837 nm) at normal incidence has been achieved. The measured photonic band gap (PBG) is found well matching with the calculated photonic band gap of an infinite 1DPC. The experimentally observed omnidirectional photonic band 592–668 nm (∆ λ = 76 nm) in the visible region with band to mid-band ratio ∆ λ/λ = 12% for reflectivity R > 99% over the incident angle range of 0°–70° is found almost matching with the calculated omnidirectional PBG. The omnidirectional reflection band is found much wider as compared to the values reported in literature so far in the visible region for TiO{sub 2}/SiO{sub 2} periodic photonic crystal. - Highlights: • TiO{sub 2}/SiO{sub 2} 1DPC has been fabricated using magnetron sputtering technique. • Experimental optical response is found good agreement with simulation results. • Wide omnidirectional photonic band in the visible spectrum has been achieved.

  8. Scaling and laws of DC discharges as pointers for HiPIMS plasmas

    CERN Document Server

    Maszl, Christian; von Keudell, Achim; Störi, Herbert

    2015-01-01

    Scaling or smiliarity laws of plasmas are of interest if lab size plasma sources are to be scaled for industrial processes. Ideally, the discharge parameters of the scaled plasmas are predictable and the fundamental physical processes are unaltered. Naturally, there are limitations and ranges of validity. Scaling laws for direct current glow discharges are well known. If a well diagnosed discharge is scaled, the field strength in the positive column, the gas amplification and the normal current density can easily be estimated. For non-stationary high power discharges like high power impulse magnetron sputtering (HiPIMS) plasmas, scaling is not as straight forward. Here, one deals with a non-stationary complex system with strong changes in plasma chemistry and symmetry breaks during the pulses. Because of the huge parameter space no good parameters are available to define these kind of discharges unambiguous at the moment. In this contribution we will discuss the scaling laws for DC glow discharges briefly and...

  9. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Science.gov (United States)

    Yuan, Xiaohong; Xu, Wenzheng; Huang, Fenglin; Chen, Dongsheng; Wei, Qufu

    2016-12-01

    Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag2O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  10. Early Oscillation Detection Technique for Hybrid DC/DC Converters

    Science.gov (United States)

    Wang, Bright L.

    2011-01-01

    Oscillation or instability is a situation that must be avoided for reliable hybrid DC/DC converters. A real-time electronics measurement technique was developed to detect catastrophic oscillations at early stages for hybrid DC/DC converters. It is capable of identifying low-level oscillation and determining the degree of the oscillation at a unique frequency for every individual model of the converters without disturbing their normal operations. This technique is specially developed for space-used hybrid DC/DC converters, but it is also suitable for most of commercial and military switching-mode power supplies. This is a weak-electronic-signal detection technique to detect hybrid DC/DC converter oscillation presented as a specific noise signal at power input pins. It is based on principles of feedback control loop oscillation and RF signal modulations, and is realized by using signal power spectral analysis. On the power spectrum, a channel power amplitude at characteristic frequency (CPcf) and a channel power amplitude at switching frequency (CPsw) are chosen as oscillation level indicators. If the converter is stable, the CPcf is a very small pulse and the CPsw is a larger, clear, single pulse. At early stage of oscillation, the CPcf increases to a certain level and the CPsw shows a small pair of sideband pulses around it. If the converter oscillates, the CPcf reaches to a higher level and the CPsw shows more high-level sideband pulses. A comprehensive stability index (CSI) is adopted as a quantitative measure to accurately assign a degree of stability to a specific DC/DC converter. The CSI is a ratio of normal and abnormal power spectral density, and can be calculated using specified and measured CPcf and CPsw data. The novel and unique feature of this technique is the use of power channel amplitudes at characteristic frequency and switching frequency to evaluate stability and identify oscillations at an early stage without interfering with a DC/DC converter s

  11. An efficient magnetron transmitter for superconducting accelerators

    Science.gov (United States)

    Kazakevich, G.; Lebedev, V.; Yakovlev, V.; Pavlov, V.

    2016-12-01

    A concept of a highly-efficient high-power magnetron transmitter allowing wide-band phase and the mid-frequency power control at the frequency of the locking signal is proposed. The proposal is aimed for powering Superconducting RF (SRF) cavities of intensity-frontier accelerators. The transmitter is intended to operate with phase and amplitude control feedback loops allowing suppression of microphonics and beam loading in the SRF cavities. The concept utilizes injection-locked magnetrons controlled in phase by the locking signal supplied by a feedback system. The injection-locking signal pre-excites the magnetron and allows its operation below the critical voltage in free run. This realizes control of the magnetron power in an extended range (up to 10 dB) by control of the magnetron current. Experimental studies were carried out with 2.45 GHz, 1 kW, CW magnetrons. They demonstrated stable operation of the magnetrons and the required range of power control at a low noise level. An analysis of the kinetics of the drifting charge within the framework of the presented model of phase focusing in magnetrons substantiates the concept and the experimental results.

  12. 3-D Printed High Power Microwave Magnetrons

    Science.gov (United States)

    Jordan, Nicholas; Greening, Geoffrey; Exelby, Steven; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad

    2015-11-01

    The size, weight, and power requirements of HPM systems are critical constraints on their viability, and can potentially be improved through the use of additive manufacturing techniques, which are rapidly increasing in capability and affordability. Recent experiments on the UM Recirculating Planar Magnetron (RPM), have explored the use of 3-D printed components in a HPM system. The system was driven by MELBA-C, a Marx-Abramyan system which delivers a -300 kV voltage pulse for 0.3-1.0 us, with a 0.15-0.3 T axial magnetic field applied by a pair of electromagnets. Anode blocks were printed from Water Shed XC 11122 photopolymer using a stereolithography process, and prepared with either a spray-coated or electroplated finish. Both manufacturing processes were compared against baseline data for a machined aluminum anode, noting any differences in power output, oscillation frequency, and mode stability. Evolution and durability of the 3-D printed structures were noted both visually and by tracking vacuum inventories via a residual gas analyzer. Research supported by AFOSR (grant #FA9550-15-1-0097) and AFRL.

  13. Advanced DC/DC converters

    CERN Document Server

    Luo, Fang Lin

    2003-01-01

    INTRODUCTIONHistorical ReviewMultiple Quadrant ChoppersPump CircuitsDevelopment of DC/DC Conversion TechniqueCategorize Prototypes and DC/DC Converters Family TreeVOLTAGE-LIFT CONVERTERSIntroductionSeven Self-Lift ConvertersPositive Output Luo-ConvertersNegative Output Luo-ConvertersModified Positive Output Luo-Converters Double Output Luo-ConvertersPOSITIVE OUTPUT SUPER-LIFT LUO-CONVERTERS IntroductionMain SeriesAdditional SeriesEnhanced Series Re-Enhanced Series Multiple-Enhanced Series Summary of Positive Output

  14. Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering

    OpenAIRE

    Baroni, M. P. M. A.; Conceição, M. Ventura; Rosa, R. R.; Persson, C.; Arwin, H.; Silva Jr., E.F. da; Roman, L.S.; Nakamura, O.; I. Pepe; Silva, A. Ferreira da

    2006-01-01

    RESTRITO Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby enviro...

  15. DC + RSL

    DEFF Research Database (Denmark)

    Haxthausen, Anne

    1996-01-01

    This document gives some initial ideas of how the Duration Calculus (DC) can be integrated with the RAISE Specification Language (RSL).......This document gives some initial ideas of how the Duration Calculus (DC) can be integrated with the RAISE Specification Language (RSL)....

  16. An Efficient DC- DC Converter with Bidirectional Power Flow

    Directory of Open Access Journals (Sweden)

    N.RAJARAJESWARI

    2008-07-01

    Full Text Available This paper introduces a Bi-directional DC-DC converter with adaptive fuzzy logic controller. Bidirectional power flow is obtained by same power components and provides a simple, efficient, and galvanically isolated converter. In the presence of DC mains the converter operates as buck converter and charges the battery. When the DC mains fails, the converter operates as boost converter and the down stream converter is fed by the battery. The power switches are controlled by Pulse Width Modulation technique and the pulses are generated by the application of fuzzy logic with an adoption algorithm. The proposed converter is simulated using MATLAB and laboratory prototype was developed to validate the simulation results.

  17. Characterization of high power impulse magnetron sputtering discharges

    Science.gov (United States)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  18. Modeling and Computer Simulation of the Pulsed Powering of Mechanical D.C. Circuit Breakers for the CERN/LHC Superconducting Magnet Energy Extraction System

    CERN Document Server

    Anushat, V; Erokhin, A; Kussul, A; Medvedko, A S

    2000-01-01

    This article presents the results of modeling and computer simulation of non-linear devices such as the Electromagnetic Driver of a D.C. Circuit Breaker. The mechanical and electromagnetic parts of the Driver are represented as equivalent electrical circuits and all basic processes of the Driver's magnetic circuit are calculated.

  19. Peptide-loaded dendritic cells prime and activate MHC-class I-restricted T cells more efficiently than protein-loaded cross-presenting DC

    DEFF Research Database (Denmark)

    Met, Ozcan; Buus, Søren; Claesson, Mogens H

    2003-01-01

    -pulsed DC. Moreover, SIINFEKL-loaded DC were up to 50 times more efficient than DC-pulsed with OVA-protein for generation of an H-2K(b)-restricted response. Immunization of mice with SIINFEKL-loaded DC resulted in a much stronger H-2K(b)-restricted response than immunization with OVA-pulsed DC. These data...

  20. Negative Ion Sources: Magnetron and Penning

    CERN Document Server

    Faircloth, D C

    2013-01-01

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared.

  1. Forback DC-to-DC converter

    Science.gov (United States)

    Lukemire, Alan T.

    1995-05-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  2. Forback DC-to-DC converter

    Science.gov (United States)

    Lukemire, Alan T. (Inventor)

    1993-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  3. Photoelectric Properties of Mo Doped TiO2 Thin Films Deposited by DC Reactive Magnetron Sputtering%直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性

    Institute of Scientific and Technical Information of China (English)

    颜秉熙; 罗胜耘; 沈杰

    2012-01-01

    Nanocrystalline TiO? Thin films doped with different concentrations of Mo were deposited by direct current (DC) reactive magnetron sputtering. The influence of Mo on surfaces, crystal structures, the valence states of elements and the absorption band of Mo doped TiO2 films were characterized by means of atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Ultraviolet-visible spectroscopy (UV-Vis). To investigate the photoelectric characteristic of ITO (indium tin oxide)/Mo-TiO2 electrodes, a series of cyclic voltammetry experiments were conducted. The results indicate that an appropriate amount of Mo atoms, observed as Mo6* and Mo5* by XPS, could inhibit the crystal growth of particles, enhance the surface roughness of the Mo doped TiO2 thin film, and bring about a remarkable red shift of the absorption spectra. As the concentration of Mo increased, the energy gap declined at first until the amount of doped Mo eventually reached 3.6% (n(Mo)/n(Ti)), when a blue shift of spectra resulted and the energy gap grew wider. The sample doped with 0.9% Mo was irradiated with a Xe lamp and showed the highest photocurrent, which continued to increase with increasing voltage exerted on the anode. An increase in Mo concentration resulted in a decrease in photocurrent. Compared to the pure TiO2 film, the sample with 3.6% Mo had a much lower photocurrent. Our experiments demonstrate that Mo doping, when the concentration was controlled under a relatively low limit, brought about a significant improvement of the photoelectric properties of the TiO3 films. The highest photocurrent observed is 2.4 times that of the sample with no Mo doping.%通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射(XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、晶体结构、元素价态及吸收带边的影响.用

  4. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  5. 不可控12脉波整流的输电线路直流融冰研究%Study on DC De-icing Method Based on Uncontrollable 12-Pulse Rectification for Transmission Line

    Institute of Scientific and Technical Information of China (English)

    罗小龙; 廖振; 彭峰; 郭浩; 胡晓羲

    2012-01-01

    在覆冰输电线路的融冰方法中,与传统的交流融冰法和机械除冰法相比,直流融冰法具有所需电源容量小、高效、方便等优势。研究了采用不可控12脉波整流的直流融冰方法,分析了不可控12脉波整流直流融冰原理,在确定相应型号导线融冰电流的基础上,计算出实现导线融冰所需的融冰电压和交流侧电压,并由此确定整流变压器的额定电压比,分别推导出上下整流桥串/并联两种接线方式条件下覆冰导线的可融长度。仿真结果表明,该方法在不同型号导线的一定长度范围内具有良好的融冰效果,为解决输电线路覆冰问题提供了一种可靠技术。%In many de-icing methods for icing transmission lines, DC de-icing method has many advantages when it is compared to the traditional AC or artificial de-icing method, such as smaller power supply capacity, higher efficiency and convenience. This paper studies a DC de-icing method which is based on uncontrollable 12 pulse rectifier. It analyzes DC de-icing principle of uncontrollable 12 pulse rectification. According to the de-icing current of a given conductor, the AC side voltage and the DC de-icing voltage, which could make the ice covering on the conductor de-iced, will be calculated. Then the rated voltage ratio of rectifying transformer can be easily determined, and the icing conductor's de-icing range is deduced by making the two rectifier bridges connected in series and in parallel. Simulation shows that this method is really efficient to de-ice the ice covering on the transmission line in a certain range. It provides a reliable technology for solving the problem of icing transmission lines.

  6. Simplified dc to dc converter

    Science.gov (United States)

    Gruber, R. P. (Inventor)

    1984-01-01

    A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance. The switching frequency of the switches is appropriately varied to increase the voltage drop across the virtual reactance in the secondary winding to which there is connected a low impedance load. A starting circuit suitable for voltage switching devices is provided.

  7. A high power impulse magnetron sputtering model to explain high deposition rate magnetic field configurations

    Science.gov (United States)

    Raman, Priya; Weberski, Justin; Cheng, Matthew; Shchelkanov, Ivan; Ruzic, David N.

    2016-10-01

    High Power Impulse Magnetron Sputtering (HiPIMS) is one of the recent developments in the field of magnetron sputtering technology that is capable of producing high performance, high quality thin films. Commercial implementation of HiPIMS technology has been a huge challenge due to its lower deposition rates compared to direct current Magnetron Sputtering. The cylindrically symmetric "TriPack" magnet pack for a 10 cm sputter magnetron that was developed at the Center for Plasma Material Interactions was able to produce higher deposition rates in HiPIMS compared to conventional pack HiPIMS for the same average power. The "TriPack" magnet pack in HiPIMS produces superior substrate uniformity without the need of substrate rotation in addition to producing higher metal ion fraction to the substrate when compared to the conventional pack HiPIMS [Raman et al., Surf. Coat. Technol. 293, 10 (2016)]. The films that are deposited using the "TriPack" magnet pack have much smaller grains compared to conventional pack DC and HiPIMS films. In this paper, the reasons behind the observed increase in HiPIMS deposition rates from the TriPack magnet pack along with a modified particle flux model is discussed.

  8. Fundamental Understanding of the Impact High Pulsed Power Loading has on a MicroGrid’s DC or AC Bus

    Science.gov (United States)

    2013-06-12

    Seamless integration of distributed/renewable energy into a smart MicroGrid architecture is a hot topic of research for both public and defense...applications. It is the DoD’s intention to develop a more cost efficient and reliable power architecture on the battlefield. A smart MicroGrid ...dedicated power supplies. The impact this type of loading has on the central DC or AC bus of a MicroGrid must be studied and it was the intent of

  9. Virtual-vector-based space vector pulse width modulation of the DC-AC multilevel-clamped multilevel converter (MLC2)

    DEFF Research Database (Denmark)

    Rodriguez, Pedro; Busquets-Monge, Sergio; Blaabjerg, Frede;

    2011-01-01

    This work presents the development of the space vector pulse width modulation (SVPWM) of a new multi-level converter topology. First, the proposed converter and its natural space vector diagram are presented. Secondly, a modified space vector diagram based on the virtual-vectors technique is show...

  10. Decentralized Interleaving of Paralleled Dc-Dc Buck Converters: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Brian B [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rodriguez, Miguel [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-09-01

    We present a decentralized control strategy that yields switch interleaving among parallel connected dc-dc buck converters without communication. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work represents the first fully decentralized strategy for switch interleaving of paralleled dc-dc buck converters.

  11. Elementary surface processes during reactive magnetron sputtering of chromium

    Energy Technology Data Exchange (ETDEWEB)

    Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von [Research Group Reactive Plasmas, Ruhr-University Bochum, Universitystr. 150, 44801 Bochum (Germany)

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  12. PWM DC/DC Converter

    OpenAIRE

    Chen, Juan

    2008-01-01

    This report is the result of a Master Thesis work done at Seaward Electronics Inc. in Beijing, China from June to December in 2007. The main goal for this thesis is to verify and improve the performance of Honey-PWM DC-DC converter, which has been fabricated by a standard 0.6um CMOS processes. The project was started with studying of Buck converter structure. After the understanding of the converter structure, the project goes in to the analyses phase for each sub-cells, including the theory,...

  13. Virtual-vector-based space vector pulse width modulation of the DC-AC multilevel-clamped multilevel converter (MLC2)

    DEFF Research Database (Denmark)

    Rodriguez, Pedro; Busquets-Monge, Sergio; Blaabjerg, Frede

    2011-01-01

    This work presents the development of the space vector pulse width modulation (SVPWM) of a new multi-level converter topology. First, the proposed converter and its natural space vector diagram are presented. Secondly, a modified space vector diagram based on the virtual-vectors technique is shown....... Simulation results by using a space vector approach are presented. Special emphasis is given on the total harmonic distortion (THD) by making a comparison with those of the classical NPC topologies....

  14. Modelling and Optimization of Technological Process for Magnetron Synthesis of Altin Nanocomposite Films on Cutting Tools

    Science.gov (United States)

    Kozhina, T. D.

    2016-04-01

    The paper highlights the results of the research on developing the mechanism to model the technological process for magnetron synthesis of nanocomposite films on cutting tools, which provides their specified physical and mechanical characteristics by controlling pulsed plasma parameters. The paper presents optimal conditions for AlTiN coating deposition on cutting tools according to the ion energy of sputtered atoms in order to provide their specified physical and mechanical characteristics.

  15. Photocatalytic Activity of Reactively Sputtered Titania Coatings Deposited Using a Full Face Erosion Magnetron

    OpenAIRE

    Farahani, Nick; Kelly, Peter,; West, Glen; Hill, Claire; Vishnyakov, Vladimir

    2013-01-01

    Titanium dioxide (titania) is widely used as a photocatalyst for its moderate band gap, high photoactivity, recyclability, nontoxicity, low cost and its significant chemical stability. The anatase phase of titania is known to show the highest photocatalytic activity, however, the presence of this phase alone is not sufficient for sustained activity. In this study TiO2 coatings were deposited onto glass substrates by mid-frequency pulsed magnetron sputtering from metallic targets in reactive m...

  16. The existence of a double S-shaped process curve during reactive magnetron sputtering

    Science.gov (United States)

    Schelfhout, R.; Strijckmans, K.; Depla, D.

    2016-09-01

    The four dimensional parameter space (discharge voltage and current and reactive gas flow and pressure) related to a reactive Ar/O2 DC magnetron discharge with an aluminum target and constant pumping speed was acquired by measuring current-voltage characteristics at different oxygen flows. The projection onto the pressure-flow plane allows us to study the well-known S-shaped process curve. This experimental procedure guarantees no time dependent effects on the result. The obtained process curve appears not to be unique but rather two significantly different S-shaped curves are noticed which depend on the history of the steady state target condition. As such, this result has not only an important impact on the fundamental description of the reactive sputtering process but it can also have its consequences on typical feedback control systems for the operation in the transition regime of the hysteresis during reactive magnetron sputtering.

  17. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  18. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  19. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  20. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Stranak, V., E-mail: stranak@physik.uni-greifswald.de [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Wulff, H. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Rebl, H. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Zietz, C. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Arndt, K. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Bogdanowicz, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany); Nebe, B. [University of Rostock, Biomedical Res. Center, Dept. of Cell Biology, Schillingallee 69, 18057 Rostock (Germany); Bader, R. [University of Rostock, Dept. of Orthopaedics, Doberaner Str. 142, 18057 Rostock (Germany); Podbielski, A. [University of Rostock, Dept. of Med. Microbiol., Virology and Hygiene, Schillingallee 70, 18057 Rostock (Germany); Hubicka, Z. [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 180 00 Prague (Czech Republic); Hippler, R. [University of Greifswald, Institute of Physics, Felix-Hausdorff Str. 6, 17489 Greifswald (Germany)

    2011-10-10

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 {mu}g) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: {yields} Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. {yields} The cytotoxic effect is caused by total release of copper species from thin films. {yields} The copper release is influenced by crystallography and chemical properties of thin films. {yields} Sufficient growth of osteoblastic cells follows after copper release.

  1. Preliminary Results of Nb Thin Film Coating for HIE-ISOLDE SRF Cavities Obtained by Magnetron Sputtering

    CERN Document Server

    Sublet, A; Calatroni, S; D'Elia, A; Jecklin, N; Mondino, I; Prunet, S; Therasse, M; Venturini Delsolaro, W; Zhang, P

    2013-01-01

    In the context of the HIE-ISOLDE upgrade at CERN, several new facilities for the niobium sputter coating of QWR-type superconducting RF accelerating cavities have been developed, built, and successfully operated. In order to further optimize the production process of these cavities the magnetron sputtering technique has been further investigated and continued as an alternative to the already successfully operational DC bias diode sputtering method. The purpose of this poster is to present the results obtained with this technique. The Nb thickness profile along the cavity and its correlation with the electro-magnetic field distribution inside the cavity are discussed. Film structure, morphology and Residual Resistivity Ratio (RRR) will be considered as well and compared with films obtained by DC bias diode sputtering. Finally these results will be compared with RF measurement of a production-like magnetron-coated cavity.

  2. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    Energy Technology Data Exchange (ETDEWEB)

    Dhivya, P. [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India); Prasad, A.K. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Sridharan, M., E-mail: m.sridharan@ece.sastra.edu [Functional Nanomaterials and Devices Lab, Centre for Nanotechnology and Advanced Biomaterials and School of Electrical and Electronics Engineering, SASTRA University, Thanjavur-613 401 (India)

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  3. Isolerad DC/DC-omvandlare

    OpenAIRE

    Andersson, Martin

    2011-01-01

    1 SammanfattningCrossControl är ett företag som bland annat tillverkar integrerade datorlösningar. Datorerna drivs normalt med 18-30 VDC och förbrukar som mest 50W. Datorerna säljs till flertalet olika kunder som monterar dem i allt från skogsmaskiner till tåg. I de olika fordonen varierar spänningen i de befintliga elnäten. Detta skapar behovet av att omvandla spänningen till en nivå som datorerna klarar av. En sådan apparat kallas DC/DC-omvandlare. Spänningsomvandling kan utföras genom linj...

  4. 6.5 µJ pulses from a compact dissipative soliton resonance mode-locked erbium-ytterbium double clad (DC) laser

    Science.gov (United States)

    Krzempek, K.; Abramski, K.

    2017-01-01

    The feasibility of constructing a compact, all-fiber, dissipative soliton resonance (DSR) mode-locked erbium-ytterbium double clad laser emitting 6.517 µJ pulses directly from the cavity is presented. The laser was built in a figure-8 configuration and mode-locked using a nonlinear optical loop mirror. A DSR regime of operation was enforced in the cavity by large net-anomalous dispersion (-21.431 ps2), obtained by incorporating 1 km of SMF28 fiber in the resonator. The laser operated at a 201 kHz repetition rate, with maximum average output power of 1.31 W at 7.2 W of pump power, yielding an impressive 20% slope efficiency.

  5. Brushless DC Motors, Velocity and Position Control of the Brushless DC Motor.

    Science.gov (United States)

    1986-06-01

    DC motor was designed using the Hall effect sensors. In addition, the position control of the brushless DC motor was developed using an optical encoder to sense angular position changes and a microprocessor to provide the desired position control. A Pittman 5111 wdg 1 brushless DC motor was used for this study. The design of the digital tachometer and pulse width modulator for velocity control and the design of the Z-80 based microprocessor controller and software design are described in

  6. Multistability and hidden attractors in a multilevel DC/DC converter

    DEFF Research Database (Denmark)

    Zhusubaliyev, Zhanybai T.; Mosekilde, Erik

    2015-01-01

    for the hidden set in most cases has been so complicated that special analytic and/or numerical techniques have been required to locate the set. By simulating the model of a multilevel DC/DC converter that operates in the regime of high feedback gain, the paper illustrates how pulse-width modulated control can...

  7. Regulation of a lightweight high efficiency capacitator diode voltage multiplier dc-dc converter

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1976-01-01

    A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

  8. Regulation of a lightweight high efficiency capacitor diode voltage multiplier dc-dc converter

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1976-01-01

    A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

  9. Characteristic Features of the Formation of a Combined Magnetron-Laser Plasma in the Processes of Deposition of Film Coatings

    Science.gov (United States)

    Burmakov, A. P.; Kuleshov, V. N.; Prokopchik, K. Yu.

    2016-09-01

    A block diagram of a facility for combined magnetron-laser deposition of coatings and of the systems of controlling and managing this process is considered. The results of analysis of the influence of the gas medium and of laser radiation parameters on the emission-optical properties of laser plasma are considered. The influence of the laser plasma on the electric characteristics of a magnetron discharge is analyzed. The formation of the laser plasma-initiated pulse arc discharge has been established and the influence of the laser radiation parameters on the electric characteristics of this discharge has been determined. The emission optical spectra of the magnetron discharge plasma and of erosion laser plasma are compared separately and in combination.

  10. Optical properties and residual stress in Nb-Si composite films prepared by magnetron cosputtering.

    Science.gov (United States)

    Tang, Chien-Jen; Porter, Glen Andrew; Jaing, Cheng-Chung; Tsai, Fang-Ming

    2015-02-01

    This paper investigates Nb-Si metal composite films with various proportions of niobium in comparison to pure Nb films. Films were prepared by two-target RF-DC magnetron cosputtering deposition. The optical properties and residual stress were analyzed. A composition of Nb(0.74)Si(0.26) was chosen toward the design and fabrication of solar absorbing coatings having a high absorption in a broad wavelength range, a low residual stress, and suitable optical constants. The layer thicknesses and absorption characteristics of the Nb-Si composite films adhere more closely to the design than other coatings made of dielectric film materials.

  11. Development of Nb3Sn coatings by magnetron sputtering for SRF cavities

    CERN Document Server

    Rosaz, G.; Leaux, F.; Motschmann, F.; Mydlarz, Z.; Taborelli, M.; Vollenberg, W.

    2016-01-01

    This paper presents the first results obtained on DC magnetron sputtering of Nb3Sn thin films dedicated to superconducting radio frequency cavities (SRF). Nb/Sn ratio of 3.76 and 3.2 have been obtained for Ar coating pressures of respectively 1.10-3 mbar and 5.10-2 mbar. According to XRD analyses both coating pressures lead to amorphous Nb3Sn layers that are not superconducting. Afterward, one coating has been annealed at 700°C, 750°C and 800°C under vacuum for 24h and exhibited for the three different temperatures the A15 cubic phase.

  12. Magnetron sputtering cluster apparatus for formation and deposition of size-selected metal nanoparticles

    DEFF Research Database (Denmark)

    Hanif, Muhammad; Popok, Vladimir

    2015-01-01

    The experimental setup utilizing a DC magnetron sputtering source for production of metal clusters, their size (mass) selection and following deposition in high vacuum is described. The source is capable to form clusters of various metals, for example, copper, silver, gold etc. Cluster size...... selection is achieved using an electrostatic quadrupole mass selector. The deposited silver clusters are studied using atomic force microscopy. The height distributions show typical relative standard size deviation of 9-13% for given sizes in the range between 5-23 nm. Thus, the apparatus demonstrates good...

  13. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  14. STUDY ON Ni-Cr SYSTEM SOLAR SELECTIVE THIN FILMS PREPARED BY MAGNETRON REACTIVE SPUTTERING PROCESS

    Institute of Scientific and Technical Information of China (English)

    B.W. Wang; H. Shen

    2002-01-01

    Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as targetmaterial and copper sheets as substrate. Using SEM, Spectrophotometer and Talystepto analyze the relations between the selective characteristic and the structure, theformation and the thickness of the thin films. The aim is to obtain good solar selectivethin films with high absorptance and low emittance, which is applied to flat plate solarheat collectors.

  15. Modified Multiport Dc-Dc Converter Topology For Smart Grid

    Directory of Open Access Journals (Sweden)

    Dhamodharan Shanmugam

    2013-10-01

    Full Text Available The development of a Solid State Transformer (SST that incorporates a DC-DC multiport converter to integrate both photovoltaic (PV power generation and battery energy storage is presented in this dissertation. The DC-DC stage is based on a quad active-bridge (QAB converter which not only provides isolation for the load, but also for the PV and storage. The AC-DC stage is implemented with a pulse-widthmodulated (PWM single phase rectifier. A unified gyrator-based average model is developed for a general multi-active-bridge (MAB converter controlled through phase-shift modulation (PSM. Expressions to determine the power rating of the MAB ports are also derived. The developed gyrator-based average model is applied to the QAB converter for faster simulations of the proposed SST during the control design process as well for deriving the state-space representation of the plant. Both linear quadratic regulator (LQR and singleinput-single-output (SISO types of controllers are designed for the DC-DC stage. A novel technique that complements the SISO controller by taking into account the cross coupling characteristics of the QAB converter is also presented herein. Cascaded SISO controllers are designed for the AC-DC stage. The QAB demanded power is calculated at the QAB controls and then fed into the rectifier controls in order to minimize the effect of the interaction between the two SST stages. The dynamic performance of the designed control loops based on the proposed control strategies are verified through extensive simulation of the SST average and switching models.

  16. 直流陡脉冲复合电场对脏污变压器油介损的影响%DC-steep pulse field in transformer oil purifying

    Institute of Scientific and Technical Information of China (English)

    米彦; 张晏源; 周龙翔; 姚陈果; 李成祥

    2014-01-01

    Transformer oil is an important internal insulating medium for immersed power transformers and its per-formance has a direct impact to the transformer electrical performance and operating life. Traditional physical and chemical methods for the purification of contaminated transformer oil have a limited effect and it is difficult to purify online. Using DC-steep pulse field to purify transformer oil online can be a good way to solve some of the deficien-cies of the above methods. In this paper, we chose the power transformer oil which has been operated in 110kV substation for 17 years as the research object. Based on orthogonal experimental design, the DC-steep pulse field with different parameters has been divided to 9 groups to purify the dirty transformer oil to find out the primary and secondary order of each factor as well as a set of optimal combination of parameters. Then, according to the optimal parameters obtained, the single variable method was used to study pulse width and pulse voltage factors. Dielectric loss was measured to judge the purification effect.%变压器油是油浸电力变压器内部重要的绝缘介质,其性能优劣对变压器的电气性能和运行寿命有直接影响。传统的物理化学方法对脏污变压器油的净化效果有限,且难以满足现场在线净化的需求。直流陡脉冲复合电场在线净化变压器油能够很好地解决上述净油方法的一些不足。本文以小龙坎变电站运行17年的110 kV电力变压器油为研究对象,基于正交实验方案设计了直流陡脉冲复合电场的9组不同参数组合进行脏污变压器油的净化实验,分析得出了复合电场参数主次顺序以及一组最优参数组合。接着本文在上述得出的最优参数组合基础上分别采用单一变量法对脉宽因素和脉冲电压因素进行了研究,并对处理后的变压器油的工频介质损耗因数进行测定,得出以上因素对直流

  17. The impact of hybrid energy storage on power quality, when high power pulsed DC loads are operated on a microgrid testbed

    Science.gov (United States)

    Kelley, Jay Paul

    . This enables the generator to maintain its operation at levels of high efficiency thereby increasing the power quality of the AC bus. The work discussed here is aimed at evaluating how the use of energy storage impacts the power quality on MicroGrid's AC bus when high rate DC and AC loads are sourced simultaneously. Also HESM has been developed and evaluated as a mean to optimizing both the power and energy density of the energy storage installed.

  18. The Development and Application of the Magnetron,

    Science.gov (United States)

    1982-03-31

    of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

  19. Spatiotemporal Evolution of Ar(3P2) Metastable Density Generated in a Pulsed DC Atmospheric Pressure micro-Plasma Jet Impinging on a Glass Plate

    Science.gov (United States)

    Gazeli, K.; Bauville, G.; Es-Sebbar, Et-T.; Fleury, M.; Neveau, O.; Pasquiers, St.; Santos Sousa, J.; Laboratoire de Physique des gaz et des plasmas Team

    2016-09-01

    Atmospheric Pressure micro-Plasma Jets (APPJs) are promising tools in various domains such as biomedical and material treatments. In this work, APPJs are produced in pure argon at variable flow rates (i.e., 200, 400 and 600 sccm), by applying high voltage positive pulses (250 ns in FWHM and 6 kV in amplitude) at a repetition frequency of 20 kHz. The generated plasma impacts an ungrounded glass plate placed at a distance of 5 mm from the tube's orifice and perpendicular to the streamers propagation. At these conditions, a diffuse discharge is established resulting in a non-filamentary and reproducible plasma, in contrast with the free-jet case (no target). This allows the quantification of the absolute density of the Ar(1s5) metastable state by using laser absorption spectroscopy to probe the transition 1s5 -> 2p9 at 811.531 nm. The experiments show the dependence on the gas flow rate and on the axial and radial positions of the maximum density (6-9x1013 cm-3) . At 200 sccm, it is obtained close to the tube's orifice, while with increasing flow rate it is displaced towards the plate. Regarding the radial variation, density maxima are obtained in a small area around the streamers propagation axis.

  20. Development of a Magnetron Resonance Frequency Auto Tuning System for Medical Xband [9300 MHz] RF Linear Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Sung Su; Lee, Byung Cheol [University of Science and Technology, Daejeon (Korea, Republic of); Kim, Yujong; Park, Hyung Dal; Lee, Byeong-No; Joo, Youngwoo; Cha, Hyungki; Lee, Soo Min; Song, Ki Baek [KAERI, Daejeon (Korea, Republic of); Lee, Seung Hyun [Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-05-15

    The total components of the accelerator are the magnetron, electron gun, accelerating structure, a set of solenoid magnets, four sets of steering coils, a modulator, and a circulator. One of the accelerator components of the accelerating structure is made of oxygen-free high-conductivity copper (OFHC), and its volume is changed according to the ambient temperature. As the volume changes, the resonant frequency of the accelerating structure is changed. Accordingly, the resonance frequency is mismatched between the source of the magnetron and the accelerating structure. An automatic frequency tuning system is automatically matched with the resonant frequency of the magnetron and accelerating structure, which allows a high output power and reliable accelerator operation. An automatic frequency tuning system is composed of a step motor control part for correcting the frequency of the source and power measuring parts, i.e., the forward and reflected power between the magnetron and accelerating structure. In this paper, the design, fabrication, and RF power test of the automatic frequency tuning system for the X-band linac are presented. A frequency tuning system was developed to overcome an unstable accelerator operation owing to the frequency mismatch between the magnetron and accelerating structure. The frequency measurement accuracy is 100 kHz and 0.72 degree per pulse.

  1. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  2. Adaptable DC offset correction

    Science.gov (United States)

    Golusky, John M. (Inventor); Muldoon, Kelly P. (Inventor)

    2009-01-01

    Methods and systems for adaptable DC offset correction are provided. An exemplary adaptable DC offset correction system evaluates an incoming baseband signal to determine an appropriate DC offset removal scheme; removes a DC offset from the incoming baseband signal based on the appropriate DC offset scheme in response to the evaluated incoming baseband signal; and outputs a reduced DC baseband signal in response to the DC offset removed from the incoming baseband signal.

  3. Performance Characterization of a Solenoid-type Gas Valve for the H- Magnetron Source at FNAL

    Energy Technology Data Exchange (ETDEWEB)

    Sosa, A. [Fermilab; Bollinger, D. S. [Fermilab; Karns, P. R. [Fermilab

    2016-09-06

    The magnetron-style H- ion sources currently in operation at Fermilab use piezoelectric gas valves to function. This kind of gas valve is sensitive to small changes in ambient temperature, which affect the stability and performance of the ion source. This motivates the need to find an alternative way of feeding H2 gas into the source. A solenoid-type gas valve has been characterized in a dedicated off-line test stand to assess the feasibility of its use in the operational ion sources. H- ion beams have been extracted at 35 keV using this valve. In this study, the performance of the solenoid gas valve has been characterized measuring the beam current output of the magnetron source with respect to the voltage and pulse width of the signal applied to the gas valve.

  4. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    Science.gov (United States)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  5. A THERMAL PULSE SHAPER MECHANISM.

    Science.gov (United States)

    A shaped pulse of intense thermal radiation, corresponding to the pulses from nuclear weapons, is obtained by the output of a QM carbon arc. A flywheel driven by a DC motor actuated a venetian blind shutter placed between a mirror and the target to control the flux. The combination produced reasonably good simulation and reproduction of the generalized field pulse.

  6. Discharge Physics of High Power Impulse Magnetron Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  7. Simulation and Implementation of Quasi Resonant DC-DC Converter

    Directory of Open Access Journals (Sweden)

    N. Devarajan

    2012-01-01

    Full Text Available Problem statement: A half-bridge LLC resonant converter with a voltage doubler rectifier has a simple structure and its Zero-Voltage-Switching (ZVS capability is excellent from zero to full load condition. But conduction loss is more due to high circulating energy thus reducing the system efficiency. Moreover a variable frequency control method makes the control circuits more complicated than those using the Pulse Width Modulation (PWM control method. Thus, DC drive has lower efficiency when it operates on light loads. Approach: To improve the efficiency of the DC drive under light loads, a PWM-controlled quasi-resonant converter is proposed .It has simple control circuits and less conduction loss compared to a half-bridge LLC resonant converter under light load conditions. The proposed converter has a half-bridge LLC resonant converter along with an auxiliary circuit. The load regulation of the proposed converter can be achieved by an auxiliary circuit. Thus the proposed converter is expected to be suitable sustaining power module for the efficiency enhancement of DC drives. As the magnetizing inductance of the proposed converter is larger the circulating energy is considerably reduced under light load conditions. In this study the operational principle, design and modeling of QRC DC-DC converters for DC drives are presented. The PWM controlled quasi resonant converter is implemented using PIC microcontroller 16F184A. Results: The capacitor filter in the output is replaced by pi filter to produce DC with minimum ripple. The experimental results and simulation results are compared. This converter has the advantages like reduced number of switches, reduced transformer and filter size, reduced ripple, reduced switching losses, reduced switching stresses and increased power density. Conclusion: The experimental results closely agree with the simulation results.

  8. The application of standardized control and interface circuits to three dc to dc power converters.

    Science.gov (United States)

    Yu, Y.; Biess, J. J.; Schoenfeld, A. D.; Lalli, V. R.

    1973-01-01

    Standardized control and interface circuits were applied to the three most commonly used dc to dc converters: the buck-boost converter, the series-switching buck regulator, and the pulse-modulated parallel inverter. The two-loop ASDTIC regulation control concept was implemented by using a common analog control signal processor and a novel digital control signal processor. This resulted in control circuit standardization and superior static and dynamic performance of the three dc-to-dc converters. Power components stress control, through active peak current limiting and recovery of switching losses, was applied to enhance reliability and converter efficiency.

  9. "Forback" Dc-To-Dc Converters

    Science.gov (United States)

    Lukemire, Alan T.

    1992-01-01

    Dc-to-dc power-converter circuits called "forback" resemble circuits of standard configurations called "forward", "flyback", and "Cuk". Circuit employs minor modifications to existing topologies, combines advantages, while eliminating disadvantages, of older circuits.

  10. Optical Properties of Magnetron sputtered Nickel Thin Films

    Science.gov (United States)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  11. Hierarchical Velocity Control Based on Differential Flatness for a DC/DC Buck Converter-DC Motor System

    Directory of Open Access Journals (Sweden)

    R. Silva-Ortigoza

    2014-01-01

    Full Text Available This paper presents a hierarchical controller that carries out the angular velocity trajectory tracking task for a DC motor driven by a DC/DC Buck converter. The high level control is related to the DC motor and the low level control is dedicated to the DC/DC Buck converter; both controls are designed via differential flatness. The high level control provides a desired voltage profile for the DC motor to achieve the tracking of a desired angular velocity trajectory. Then, a low level control is designed to ensure that the output voltage of the DC/DC Buck converter tracks the voltage profile imposed by the high level control. In order to experimentally verify the hierarchical controller performance, a DS1104 electronic board from dSPACE and Matlab-Simulink are used. The switched implementation of the hierarchical average controller is accomplished by means of pulse width modulation. Experimental results of the hierarchical controller for the velocity trajectory tracking task show good performance and robustness against the uncertainties associated with different system parameters.

  12. Multiport Resonant DC-DC Converter

    OpenAIRE

    Tran, Yan-Kim; Dujic, Drazen; Barrade, Philippe

    2015-01-01

    his paper presents a multiport galvanically isolated LLC resonant DC-DC converter suitable for DC applications. A three-port structure is analyzed, with full bidirectional power flow capabilities, simple control and behavior similar to that expected from a DC transformer. Each port is equipped with half-bridge modules accompanied with tuned resonant tank, partly realized with elements of a multi- winding high frequency transformer. With some restrictions that are explained in the paper, each ...

  13. VLSI Hybrid DC-DC Regulator

    OpenAIRE

    Cosp Vilella, Jordi; Martínez García, Herminio

    2015-01-01

    Hybrid DC-DC regulators are structures that combine both a linear voltage regulator and a switching DC-DC converter. The main objective of this hybrid topology is to converge, in a single circuit topology, the best of both alternatives: a small voltage output ripple, which is a common characteristic of linear regulator circuits, and good energy efficiency, as in switching alternatives. While the linear regulator fixes the required output voltage to a fixed value with negligible steady-state r...

  14. Local Bifurcations in DC-DC Converters

    OpenAIRE

    2012-01-01

    Three local bifurcations in DC-DC converters are reviewed. They are period-doubling bifurcation, saddle-node bifurcation, and Neimark bifurcation. A general sampled-data model is employed to study the types of loss of stability of the nominal (periodic) solution and their connection with local bifurcations. More accurate prediction of instability and bifurcation than using the averaging approach is obtained. Examples of bifurcations associated with instabilities in DC-DC converters are given.

  15. Collimated Magnetron Sputter Deposition for Mirror Coatings

    DEFF Research Database (Denmark)

    Vickery, A.; Cooper-Jensen, Carsten P.; Christensen, Finn Erland

    2008-01-01

    At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a collimat......At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence...... that a collimation of the sputtered particles is an efficient way to suppress the interfacial roughness of the produced multilayer. We present two different types of collimation optimized for the production of low roughness curved mirrors and flat mirrors, respectively....

  16. High-Efficiency dc/dc Converter

    Science.gov (United States)

    Sturman, J.

    1982-01-01

    High-efficiency dc/dc converter has been developed that provides commonly used voltages of plus or minus 12 Volts from an unregulated dc source of from 14 to 40 Volts. Unique features of converter are its high efficiency at low power level and ability to provide output either larger or smaller than input voltage.

  17. Pulsed electron beam precharger

    Energy Technology Data Exchange (ETDEWEB)

    Finney, W.C. (ed.); Shelton, W.N.

    1990-01-01

    Florida State University is investigating the concept of pulsed electron beams for fly ash precipitation. This report describes the results and data on three of the subtasks of this project and preliminary work only on the remaining five subtasks. Described are the modification of precharger for pulsed and DC energization of anode; installation of the Q/A measurement system; and modification and installation of pulsed power supply to provide both pulsed and DC energization of the anode. The other tasks include: measurement of the removal efficiency for monodisperse simulated fly ash particles; measurement of particle charge; optimization of pulse energization schedule for maximum removal efficiency; practical assessment of results; and measurement of the removal efficiency for polydisperse test particles. 15 figs., 1 tab. (CK)

  18. Investigation of bunch repetition rate deviations in FIR FEL driven by a magnetron-based microtron

    CERN Document Server

    Kazakevitch, Grigori M; Lee Byung Cheol; Lee, J

    2002-01-01

    The stability of the bunch repetition rate in a FIR FEL driven by a 2.8 GHz magnetron-based microtron was investigated using a heterodyne method with a low Q-factor straight-flight measuring cavity. The measuring cavity is located in the straight section of the FIR FEL injection beam line and is excited by the passage of electron bunches. The RF signal from the measuring cavity coupling loop was mixed with a precise heterodyne signal with a frequency difference of several MHz. The beat frequency was analyzed to obtain the temporal distribution of the bunch repetition rate deviation during the macro pulse of the electron beam. The time resolution and the accuracy of measurements are approximately 100 ns and a few kHz, respectively. Based on this data, we could determine the level and shape of the magnetron current and the initial frequency shift between magnetron and accelerating cavity for the FEL operation in the wavelength range 100-300 microns.

  19. Compression and strong rarefaction in high power impulse magnetron sputtering discharges

    Energy Technology Data Exchange (ETDEWEB)

    Horwat, David; Anders, Andre

    2010-11-11

    Gas compression and strong rarefaction have been observed for high power impulse magnetron sputtering (HIPIMS) discharges using a copper target in argon. Time-resolved ion saturation currents of 35 probes were simultaneously recorded for HIPIMS discharges operating far above the self-sputtering runaway threshold. The argon background pressure was a parameter for the evaluation of the spatial and temporal development of the plasma density distribution. The data can be interpreted by a massive onset of the sputtering flux (sputter wind) that causes a transient densification of the gas, followed by rarefaction and the replacement of gas plasma by the metal plasma of sustained self-sputtering. The plasma density pulse follows closely the power pulse at low pressure. At high pressure, the relatively remote probes recorded a density peak only after the discharge pulse, indicative for slow, diffusive ion transport.

  20. Robust DC/DC converter control for polymer electrolyte membrane fuel cell application

    Science.gov (United States)

    Wang, Ya-Xiong; Yu, Duck-Hyun; Chen, Shi-An; Kim, Young-Bae

    2014-09-01

    This study investigates a robust controller in regulating the pulse width modulation (PWM) of a DC/DC converter for a polymer electrolyte membrane fuel cell (PEMFC) application. A significant variation in the output voltage of a PEMFC depends on the power requirement and prevents a PEMFC from directly connecting to a subsequent power bus. DC/DC converters are utilized to step-up or step-down voltage to match the subsequent power bus voltage. In this study, a full dynamic model, which includes a PEMFC and boost and buck DC/DC converters, is developed under MATLAB/Simulink environment for control. A robust PWM duty ratio control for the converters is designed using time delay control (TDC). This control enables state variables to accurately follow the dynamics of a reference model using time-delayed information of plant input and output information within a few sampling periods. To prove the superiority of the TDC performance, traditional proportional-integral control (PIC) and model predictive control (MPC) are designed and implemented, and the simulation results are compared. The efficacies of TDC for the PEMFC-fed PWM DC/DC converters are validated through experimental test results using a 100 W PEMFC as well as boost and buck DC/DC converters.

  1. Ground state atomic oxygen in high-power impulse magnetron sputtering: a quantitative study

    Science.gov (United States)

    Britun, Nikolay; Belosludtsev, Alexandr; Silva, Tiago; Snyders, Rony

    2017-02-01

    The ground state density of oxygen atoms in reactive high-power impulse magnetron sputtering discharges has been studied quantitatively. Both time-resolved and space-resolved measurements were conducted. The measurements were performed using two-photon absorption laser-induced fluorescence (TALIF), and calibrated by optical emission actinometry with multiple Ar emission lines. The results clarify the dynamics of the O ground state atoms in the discharge afterglow significantly, including their propagation and fast decay after the plasma pulse, as well as the influence of gas pressure, O2 admixture, etc.

  2. Various categories of defects after surface alloying induced by high current pulsed electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Dian [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze, E-mail: oaktang@hit.edu.cn [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Gu, Le [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-10-01

    Highlights: • Four kinds of defects are found during surface alloying by high current electron beam. • Exploring the mechanism how these defects appear after irradiation. • Increasing pulsing cycles will help to get good surface quality. • Choosing proper energy density will increase surface quality. - Abstract: High current pulsed electron beam (HCPEB) is an attractive advanced materials processing method which could highly increase the mechanical properties and corrosion resistance. However, how to eliminate different kinds of defects during irradiation by HCPEB especially in condition of adding new elements is a challenging task. In the present research, the titanium and TaNb-TiW composite films was deposited on the carburizing steel (SAE9310 steel) by DC magnetron sputtering before irradiation. The process of surface alloying was induced by HCPEB with pulse duration of 2.5 μs and energy density ranging from 3 to 9 J/cm{sup 2}. Investigation of the microstructure indicated that there were several forms of defects after irradiation, such as surface unwetting, surface eruption, micro-cracks and layering. How the defects formed was explained by the results of electron microscopy and energy dispersive spectroscopy. The results also revealed that proper energy density (∼6 J/cm{sup 2}) and multi-number of irradiation (≥50 times) contributed to high quality of alloyed layers after irradiation.

  3. CMOS Integrated Capacitive DC-DC Converters

    CERN Document Server

    Van Breussegem, Tom

    2013-01-01

    This book provides a detailed analysis of all aspects of capacitive DC-DC converter design: topology selection, control loop design and noise mitigation. Readers will benefit from the authors’ systematic overview that starts from the ground up, in-depth circuit analysis and a thorough review of recently proposed techniques and design methodologies.  Not only design techniques are discussed, but also implementation in CMOS is shown, by pinpointing the technological opportunities of CMOS and demonstrating the implementation based on four state-of-the-art prototypes.  Provides a detailed analysis of all aspects of capacitive DC-DC converter design;  Analyzes the potential of this type of DC-DC converter and introduces a number of techniques to unleash their full potential; Combines system theory with practical implementation techniques; Includes unique analysis of CMOS technology for this application; Provides in-depth analysis of four fabricated prototypes.

  4. DC/DC Converter Stability Testing Study

    Science.gov (United States)

    Wang, Bright L.

    2008-01-01

    This report presents study results on hybrid DC/DC converter stability testing methods. An input impedance measurement method and a gain/phase margin measurement method were evaluated to be effective to determine front-end oscillation and feedback loop oscillation. In particular, certain channel power levels of converter input noises have been found to have high degree correlation with the gain/phase margins. It becomes a potential new method to evaluate stability levels of all type of DC/DC converters by utilizing the spectral analysis on converter input noises.

  5. Coating metals on micropowders by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants (diameter 40-200 μm and particle density 0.7±0.1 g/cm3), as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.

  6. Oleophobic optical coating deposited by magnetron PVD

    Science.gov (United States)

    Bernt, D.; Ponomarenko, V.; Pisarev, A.

    2016-09-01

    Thin oxinitride films of Zn-Sn-O-N and Si-Al-O-N were deposited on glass by reactive magnetron sputtering at various nitrogen-to-oxygen ratios. Nitrogen added to oxygen led to decrease of the surface roughness and increase of oleophobic properties studied by the oil-drop test. The best oleophobity was obtained for Zn-Sn-O-N oxinitride at Zn:Sn=1:1 and N:O=1:2. Improved oleophobic properties were also demonstrated if the oxinitride film was deposited on top of the multilayer coating as the final step in the industrial cycle of production of energy efficient glass.

  7. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Liang, SONG; Xianping, WANG; Le, WANG; Ying, ZHANG; Wang, LIU; Weibing, JIANG; Tao, ZHANG; Qianfeng, FANG; Changsong, LIU

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (∼17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  8. ASIC and FPGA based DPWM architectures for single-phase and single-output DC-DC converter: a review

    Science.gov (United States)

    Chander, Subhash; Agarwal, Pramod; Gupta, Indra

    2013-12-01

    Pulse width modulation (PWM) has been widely used in power converter control. This paper presents a review of architectures of the Digital Pulse Width Modulators (DPWM) targeting digital control of switching DC-DC converters. An attempt is made to review the reported architectures with emphasis on the ASIC and FPGA implementations in single phase and single-output DC-DC converters. Recent architectures using FPGA's advanced resources for achieving the resolution higher than classical methods have also been discussed. The merits and demerits of different architectures, and their relative comparative performance, are also presented. The Authors intention is to uncover the groundwork and the related references through this review for the benefit of readers and researchers targeting different DPWM architectures for the DC-DC converters.

  9. Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

    Energy Technology Data Exchange (ETDEWEB)

    Srisang, C. [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Western Digital (Thailand) Company Limited, Ayuthaya 13160 (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400 (Thailand); Asanithi, P. [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Siangchaew, K. [Western Digital (Thailand) Company Limited, Ayuthaya 13160 (Thailand); Pokaipisit, A. [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400 (Thailand); Limsuwan, P., E-mail: opticslaser@yahoo.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400 (Thailand)

    2012-05-15

    DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm{sup -1} and 972 cm{sup -1} corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis.

  10. Killing of naive T cells by CD95L-transfected dendritic cells (DC): in vivo study using killer DC-DC hybrids and CD4(+) T cells from DO11.10 mice.

    Science.gov (United States)

    Kusuhara, Masahiro; Matsue, Keiko; Edelbaum, Dale; Loftus, Julie; Takashima, Akira; Matsue, Hiroyuki

    2002-04-01

    Dendritic cells (DC) play the dual task of initiating cellular immunity against potentially harmful foreign antigens (Ag), while maintaining immunological tolerance to self-Ag and environmental Ag. As an approach to induce Ag-specific suppression, we and others introduced CD95 ligand (L) cDNA into DC. The resulting "killer" DC delivered apoptotic signals, instead of activation signals, to primed CD4(+) T cells in vitro and induced Ag-specific immunosuppression in vivo. To study the impact of killer DC on naive T cells, the fate of Ag-reactive T cells and the extent of their depletion after killer DC treatment, we performed in vitro and in vivo reconstitution experiments using: (a) killer DC-DC hybrids created between CD95L-transduced XS106 DC clone (A/J origin) and splenic DC from BALB/c mice, (b) CD4(+) T cells isolated from DO11.10 transgenic mice (BALB/c background), and (c) OVA(323-339) peptide as relevant Ag. Ovalbumin (OVA)-pulsed killer DC-DC hybrids inhibited DO11.10 T cell activation triggered by conventional DC, instead of inducing their activation. Rapid apoptosis of T cells was observed after co-culture with OVA-pulsed killer DC-DC hybrids, but not with non-pulsed killer DC-DC hybrids or OVA-pulsed control DC-DC hybrids. For in vivo reconstitution, (BALB/cxA/J)F1 mice received subcutaneous administration of killer DC-DC hybrids, followed by intravenous inoculation of DO11.10 T cells. Killer DC-DC hybrids migrated preferentially to draining lymph nodes albeit with relatively low efficiency (0.5-1% recovery) and they induced significant, but incomplete (30-40%) killing of DO11.10 T cells in this location. These results document the abilities of CD95L-transduced DC to trigger apoptosis of naive T cells in an Ag-specific manner, to overrule T cell activation signals delivered by conventional DC, and to reduce local frequencies of Ag-reactive T cells in vivo. Our data also uncover two major limitations (relatively low homing efficiency and incomplete

  11. 76 FR 31462 - Airworthiness Directives; The Boeing Company Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10...

    Science.gov (United States)

    2011-06-01

    ... Model DC-10-10, DC- 10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F... Operations, M-30, West Building Ground Floor, Room W12-140, 1200 New Jersey Avenue, SE., Washington, DC 20590.... Applicability (c) This AD applies to all The Boeing Company Model DC-10-10, DC-10-10F, DC-10-15,......

  12. Sub microsecond notching of a negative hydrogen beam at low energy utilizing a magnetron ion source with a split extractor

    Energy Technology Data Exchange (ETDEWEB)

    Moehs, Douglas; /Fermilab

    2004-12-01

    A technique for sub-microsecond beam notching is being developed at 20 keV utilizing a Magnetron ion source with a slit extraction system and a split extractor. Each half of the extractor is treated as part of a 50 ohm transmission line which can be pulsed at {+-}700 volts creating a 1400 volt gradient. This system along with the associated electronics is electrically floated on top of a pulsed extraction voltage. A beam reduction of 95% has been observed at the end of the Fermilab 400 MeV Linac and 35% notching has recently been achieved in the Booster.

  13. Model predictive control of bidirectional isolated DC-DC converter for energy conversion system

    Science.gov (United States)

    Akter, Parvez; Uddin, Muslem; Mekhilef, Saad; Tan, Nadia Mei Lin; Akagi, Hirofumi

    2015-08-01

    Model predictive control (MPC) is a powerful and emerging control algorithm in the field of power converters and energy conversion systems. This paper proposes a model predictive algorithm to control the power flow between the high-voltage and low-voltage DC buses of a bidirectional isolated full-bridge DC-DC converter. The predictive control algorithm utilises the discrete nature of the power converters and predicts the future nature of the system, which are compared with the references to calculate the cost function. The switching state that minimises the cost function is selected for firing the converter in the next sampling time period. The proposed MPC bidirectional DC-DC converter is simulated with MATLAB/Simulink and further verified with a 2.5 kW experimental configuration. Both the simulation and experimental results confirm that the proposed MPC algorithm of the DC-DC converter reduces reactive power by avoiding the phase shift between primary and secondary sides of the high-frequency transformer and allow power transfer with unity power factor. Finally, an efficiency comparison is performed between the MPC and dual-phase-shift-based pulse-width modulation controlled DC-DC converter which ensures the effectiveness of the MPC controller.

  14. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kossoy, Anna, E-mail: annaeden@hi.is, E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn [Physics Division, Science Institute—University of Iceland, Reykjavik 107 (Iceland)

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  15. Influence of nitrogen flow rates on materials properties of CrN films grown by reactive magnetron sputtering

    Indian Academy of Sciences (India)

    B Subramanian; K Prabakaran; M Jayachandran

    2012-08-01

    Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr2N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15 sccm.

  16. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CNx multilayer grown by reactive magnetron sputtering

    OpenAIRE

    Alemon, B.; Flores, M.; Canto, C.; E. Andrade; O.G. de Lucio; M.F. Rocha; Broitman, Esteban

    2014-01-01

    A novel TiAlCN/CNx, multilayer coating, consisting of nine TiAlCN/CNx periods with a top layer 0.5 mu m of CNx, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti0.5Al0.5 and C targets respectively in a N-2/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffractio...

  17. A resonant dc-dc power converter assembly

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a resonant DC-DC power converter assembly comprising a first resonant DC-DC power converter and a second resonant DC-DC power converter having identical circuit topologies. A first inductor of the first resonant DC-DC power converter and a second inductor...... of the second resonant DC-DC power converter are configured for magnetically coupling the first and second resonant DC-DC power converters to each other to forcing substantially 180 degrees phase shift, or forcing substantially 0 degree phase shift, between corresponding resonant voltage waveforms of the first...... and second resonant DC-DC power converters. The first and second inductors are corresponding components of the first and second resonant DC-DC power converters....

  18. Gate Driver Circuit of Power Electronic Switches with Reduced Number of Isolated DC/DC Converter for a Switched Reluctance Motor

    OpenAIRE

    Ali Asghar Memon; Imtiaz Hussain; Muhammad Aslam Uqaili

    2013-01-01

    This paper presents a gate driver circuit for the switching devices used in the asymmetrical converter for a switched reluctance machine with reduced number of isolated dc/dc converters. Isolation required in the gate driver circuit of switching devices is indispensable. For the purpose of isolation different arrangements may be used such as pulse transformers. The dc/dc converter for isolation and powering the gate drive circuits is suitable, cheaper in cost and simple to implement. It is al...

  19. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  20. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  1. Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping

    Science.gov (United States)

    Tran, H. N.; Mayes, E. L. H.; Murdoch, B. J.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.; Holland, A. S.; Partridge, J. G.

    2017-04-01

    Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 × 1017 cm‑3 and mobilities of up to 13 cm2 V‑1 s–1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.

  2. Charge pump DC-DC converter comprising solid state batteries

    NARCIS (Netherlands)

    Reefman, D.; Roozeboom, F.; Notten, P.H.L.; Klootwijk, J.H.

    2013-01-01

    An electronic device is provided which comprises a DC-DC converter. The DC-DC converter comprises at least one solid-state rechargeable battery (B1, B2) for storing energy for the DC-DC conversion and an output capacitor (C2).

  3. DC source assemblies

    Science.gov (United States)

    Campbell, Jeremy B; Newson, Steve

    2013-02-26

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  4. Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating

    CERN Document Server

    Rosaz, Guillaume; Calatroni, Sergio; Sublet, Alban; Tobarelli, Mauro

    2016-01-01

    We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnet profiles. These show a good agreement between the expected and actual values. the qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016A.cm^-2 to 0.074A.cm^-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10^-3 mbar and a plasma source power of 300W.

  5. Synergistic effect of bias and target currents for magnetron sputtered MoS{sub 2}-Ti composite films

    Energy Technology Data Exchange (ETDEWEB)

    Buelbuel, Ferhat; Efeoglu, Ihsan [Ataturk Univ., Erzurum (Turkey). Dept. of Mechanical Engineering

    2016-07-01

    In terms of modification of the properties of MoS{sub 2}-Ti composite films, especially tribological properties, significant advances have recently been recorded. However, the commercially production of MoS{sub 2}-Ti composite films is still limited, because the production of desirable MoS{sub 2}-Ti composite coating is only possible by using closed field unbalanced magnetron systems and by the selection of convenient deposition parameters. This requirement has focused the researchers' attention on optimization of deposition parameters. This study is concentrating on the effect of the bias voltage and the target currents for MoS{sub 2}-Ti composite films deposited by pulsed magnetron sputtering (PMS). It is found that the bias and the target currents clearly affect the mechanical, structural and tribological properties of MoS{sub 2}-Ti films.

  6. Characterization of nanostructured Ti-B-(N) coatings produced by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Cartes, C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain)]. E-mail: clopez@icmse.csic.es; Martinez-Martinez, D. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Garcia-Luis, A. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Brizuela, M. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Onate, J.I. [Fundacion INASMET, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain)

    2007-02-26

    A series of Ti-B-(N) coatings prepared by dc magnetron sputtering using TiB{sub 2} targets in Ar/N{sub 2} gas mixtures has been chemically and structurally characterized by transmission electron microscopy, X-ray diffraction, electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy. The influence of synthesis parameters such as applied heating power and nitrogen flow on the structure and chemical composition of the coatings has been studied. Independently of the experimental conditions employed during the synthesis, hexagonal TiB{sub 2} is the main crystalline phase present in the coatings. The use of N{sub 2} leads to the formation of an amorphous mixture of BN/TiN phases, as well as a diminution of the TiB{sub 2} crystalline phase. The influence of the composition and structure of the coatings on their hardness is also discussed.

  7. Nanoscale Multilayered ZrAlN/ZrB2 Coatings Synthesized by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Dejun LI

    2006-01-01

    Multilayered ZrAlN/ZrB2 coatings containing alternating bilayer periods were synthesized by dc magnetron sputtering technique. The intensities of ZrN (111) or ZrN (200) textures in the structure of the nanolayers depended on the bilayer period as well as N2 gas partial pressure during deposition. Nanoindentation testing showed that hardness and internal stress of the nanolayers varied with the bilayer period and crystallographic orientation in the coatings. The hardness of the nanolayers with bilayer periods of 3~6 nm was enhanced (~27%) over the rule-of-mixture value. A low percent of N2 in processing gas was proved to be benefitial to the synthesis of high hard nanoscale multilayered coatings.

  8. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Damon Rafieian

    2015-09-01

    Full Text Available We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2, obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  9. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  10. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  11. Phase Structural Characteristics of ZrV2 Thin Film Prepared by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XU Shi-Lin; SHI Li-Qun

    2005-01-01

    @@ The thin film metal hydride has become an emerging field of research in metal hydride batteries for its good mechanical and hydrogenation properties. ZrV2 thin films have been prepared using a dc magnetron sputtering method, and the phase structure is investigated. Only amorphous or crystalline Zr and V mixture phases are achieved when substrates are heated during either to 400℃ or to 550 ℃. The annealing causes segregation of Zr and V in the film induced by strain-driven diffusion and interdiffusion between substrate Mo and film elements at high temperature, which results in the formation of mixture phases of C14, C15, Zr and V, but the content of C15 phase is not higher compared with that in the bulk material.

  12. Pulse on Pulse

    DEFF Research Database (Denmark)

    Schmidt, Ulrik; Carlson, Merete

    2012-01-01

    Pulse on Pulse” investigates the relation between signifying processes and non-signifying material dynamism in the installation Pulse Room (2006-) by Mexican Canadian artist Rafael Lozano-Hemmer. In Pulse Room the sense of pulse is ambiguous. Biorhythms are transmitted from the pulsing energy...... and pulsating ‘room’. Hence, the visitors in Pulse Room are invited into a complex scenario that continuously oscillates between various aspects of signification (the light bulbs representing individual lives; the pulse itself as the symbolic ‘rhythm of life’) and instants of pure material processuality...... a multilayered sense of time and space that is central to the sensory experience of Pulse Room as a whole. Pulse Room is, at the very same time, an anthropomorfized archive of a past intimacy and an all-encompassing immersive environment modulating continuously in real space-time....

  13. Experiments on a relativistic magnetron driven by a microsecond electron beam accelerator with a ceramic insulating stack

    Science.gov (United States)

    Lopez, Mike Rodriguez

    2003-10-01

    Relativistic magnetron experiments with a 6-vane, Titan tube have generated over 300 MW total microwave output power near 1 GHz. These experiments were driven by a long-pulse, e-beam accelerator. Parameters of the device were voltage = -0.3 to -0.4 MV, current = 1--10 kA, and pulselength = 0.5 microsecond. This body of work investigated pulse-shortening in the relativistic magnetron. Microwave generation with a conventional plastic insulator was compared to that with a new ceramic insulator. The ceramic insulator improved the vacuum by an order of magnitude (1 x 10-7 Torr) and increased voltage stability of the accelerator. The effect of RF breakdown in the waveguide on the intensity and duration of high power microwaves were also investigated. These experiments found that when SF6 gas was introduced into the waveguide, the measured efficiency, power, and pulselength of microwaves increased. Two different microwave extraction mechanisms were used. In the first system, two waveguides were connected to the magnetron pi-radians from each other. The second system used three waveguides to connect to the magnetron's extraction ports at 2pi/3 radians from each other. Microwaves were extracted into and measured from the waveguide. Pulselengths were found to be in the range of 10--200 ns. The theoretical investigation calculates the maximum injected current for a time-independent cycloidal flow in a relativistic, magnetically insulated diode. The analytical theory of Lovelace-Ott was extended by relaxing the space charge limited (SCL) assumption. This theory reduced to Christenson's results in the deeply non-relativistic regime, and to Lovelace-Ott under SCL. This theory has been successfully tested against relativistic PIC code simulations.

  14. Fabrication of Nb{sub 2}O{sub 5}/SiO{sub 2} mixed oxides by reactive magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Juškevičius, Kęstutis, E-mail: kestutis.juskevicius@ftmc.lt [Center for Physical Sciences and Technology, Savanorių ave. 231, LT-02300 Vilnius (Lithuania); Audronis, Martynas, E-mail: m.audronis@yahoo.co.uk [Department of Materials Science and Engineering, The University of Sheffield, Sir Robert Hadfield Building, Mappin street, S1 3JD (United Kingdom); Subačius, Andrius; Kičas, Simonas; Tolenis, Tomas; Buzelis, Rytis; Drazdys, Ramutis; Gaspariūnas, Mindaugas; Kovalevskij, Vitalij [Center for Physical Sciences and Technology, Savanorių ave. 231, LT-02300 Vilnius (Lithuania); Matthews, Allan; Leyland, Adrian [Department of Materials Science and Engineering, The University of Sheffield, Sir Robert Hadfield Building, Mappin street, S1 3JD (United Kingdom)

    2015-08-31

    This paper investigates niobia/silica mixed oxide thin films deposited by reactive pulse-DC/RF magnetron co-sputtering of Nb and Si metal targets at room temperature. The reactive gas flow during the sputtering processes was either controlled by direct mass flow rate (i.e. constant reactive gas flow) or by an active feedback process control system. 61% and 137% higher deposition rates of Nb{sub 2}O{sub 5} and SiO{sub 2} layers, respectively, were obtained using the latter technique as compared to constant reactive gas flow. Films exhibited bulk or near-bulk density. All mixture films produced in this study had an amorphous structure. A volume law of mixtures was used to determine the coating composition. It is shown that the fraction of SiO{sub 2} or/and Nb{sub 2}O{sub 5} has a linear dependency on sputter target power density. On this basis, rugate filter coating designs can be easily deposited, where refractive index gradually varies between that of pure Nb{sub 2}O{sub 5} and pure SiO{sub 2}. Substantially less inhomogeneity of coating mixtures was found in films produced using a reactive sputtering process with feedback-control. - Highlights: • 61% and 137% increase in deposition rates of Nb{sub 2}O{sub 5} and SiO{sub 2} • Rugate coating designs can be readily deposited. • Nb{sub 2}O{sub 5}/SiO{sub 2} mixture films exhibited bulk or near-bulk density. • Optimized process leads to stoichiometric and homogenous mixtures. • Films are amorphous and suitable for low loss optical coatings.

  15. Structure and electronic properties of AlCrO{sub x}N{sub 1−x} thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, H.; Karimi, A. [Institute of Condensed Matter Physics (ICMP), Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Oveisi, E. [Electron Spectrometry and Microscopy Laboratory (LSME-ICMP), Swiss Federal Institute of Technology in Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Morstein, M. [PLATIT AG, Advanced Coating Systems, CH-2545 Selzach (Switzerland)

    2014-12-01

    In this study, the main attempt is devoted to investigating the microstructure and electronic properties of AlCrO{sub x}N{sub 1−x} films in a wide range of oxygen concentrations from 0 to 1. These oxynitride films were deposited by pulsed DC magnetron sputtering from Al{sub 55}Cr{sub 45} targets. Our results showed that films with x = O/(O + N) < 0.6, exhibit a cubic (B1) lattice with a well-developed columnar structure. The incorporation of oxygen into the films without any oxide segregation results in the formation of a substitutional AlCrO{sub x}N{sub 1−x} solid solution and material system behaves like nitrides electronically. In the range of oxygen contents from 0.6 ≤ O/(O + N) < 0.97, coatings with fine columns, diffuse boundaries and high values of metal vacancies were formed. However, the B1 lattice survived despite the large proportion of oxygen. According to the structural and electronic properties of the corresponding layers, we assign this region to the formation of an amorphous phase and metastable monoxides with a B1 structure. Coatings with O/(O + N) ≥ 0.97 are electronically assigned to a solid solution of α-(Al,Cr){sub 2}(O{sub 0.97},N{sub 0.03}){sub 3} with corundum lattice and finer columnar structure. - Highlights: • AlCr(O{sub x}N{sub 1−x}) layers with variable oxygen content 0 < x < 1 were grown. • The layers with the lowest oxygen content, x < 0.6, electronically behave like nitrides. • Coatings with 0.6 ≤ x < 0.97 are assigned to metastable monoxides. • The oxide region consisted of a solid solution of α-phase with a corundum structure.

  16. Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Ayachi, Boubakeur, E-mail: boubakeur.ayachi@ed.univ-lille1.fr [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Aviles, Thomas [CROSSLUX, Avenue Georges Vacher, ZI Rousset Peynier, Immeuble CCE, Rousset 13106 (France); Vilcot, Jean-Pierre [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Sion, Cathy [Institute of Electronics, Microelectronics and Nanotechnology, Lille 1 University, Avenue Poincaré, UMR 8520, CS 60069, Villeneuve d’Ascq 59652 (France); Ecole Centrale Lille, Cité Scientifique – CS20048, Villeneuve d’Ascq 59651 (France)

    2016-03-15

    Graphical abstract: - Highlights: • High quality pulsed-DC sputtered AZO thin films were obtained after RTA treatment. • RTA for 30 s was sufficient to achieve uniform spatial resistivity distribution. • RTA for longer than 1 min showed a small increase in resistivity value. • Such improvement was attributed to grain boundaries passivation and doping activation. • In the framework of low cost solar cells development, RTA process would be helpful. - Abstract: Room temperature deposited aluminium-doped zinc oxide thin films on glass substrate, using pulsed-DC magnetron sputtering, have shown high optical transmittance and low electrical resistivity with high uniformity of its spatial distribution after they were exposed to a rapid thermal annealing process at 400 °C under N{sub 2}H{sub 2} atmosphere. It is particularly interesting to note that such an annealing process of AZO thin films for only 30 s was sufficient, on one hand to improve their optical transmittance from 73% to 86%, on the other hand to both decrease their resistivity from 1.7 × 10{sup −3} Ω cm to 5.1 × 10{sup −4} Ω cm and achieve the highest uniformity spatial distribution. To understand the mechanisms behind such improvements of the optoelectronic properties, electrical, optical, structural and morphological changes as a function of annealing time have been investigated by using hall measurement, UV–visible spectrometry, X-ray diffraction and scanning electron microscope imaging, respectively.

  17. Deuterium retention in mixed C–W–D films co-deposited in magnetron discharge in deuterium

    Energy Technology Data Exchange (ETDEWEB)

    Krat, S., E-mail: stepan.krat@gmail.com; Gasparyan, Yu; Efimov, V.; Mednikov, A.; Zibrov, M.; Pisarev, A.

    2013-07-15

    Deuterium retention in C–D and C–W–D mixed films deposited in a magnetron discharge in deuterium was studied. The deuterium content in the C–D films was in the range D/C = 0.65–0.75 for grounded substrates and 0.45–0.6 if a bias of −60 V was applied. The deuterium content in the C–W–D films was in the range of D/(C + W) = 0.2–0.4 without strong dependence on the C/W ratio (in the range of 0.7–10) and the substrate potential (in the range from 0 to −60 V). Deuterium release from the C–W–D films was observed at lower temperatures than that from the C–D films.

  18. Radiation effects on DC-DC Converters

    Science.gov (United States)

    Zhang, Dexin; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2000-01-01

    DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

  19. 75 FR 61989 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-8-31, DC-8-32, DC-8-33, DC-8-41...

    Science.gov (United States)

    2010-10-07

    ... Corporation Model DC- 8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, and DC-8-43 Airplanes; Model DC-8-50 Series Airplanes; Model DC-8F-54 and DC-8F-55 Airplanes; Model DC-8-60 Series Airplanes; Model DC-8-60F Series Airplanes; Model DC-8- 70 Series Airplanes; and Model DC-8-70F Series Airplanes AGENCY:......

  20. 75 FR 36298 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-8-31, DC-8-32, DC-8-33, DC-8-41...

    Science.gov (United States)

    2010-06-25

    ... Corporation Model DC- 8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, and DC-8-43 Airplanes; Model DC-8-50 Series Airplanes; Model DC-8F-54 and DC-8F-55 Airplanes; Model DC-8-60 Series Airplanes; Model DC-8-61 Series Airplanes; Model DC-8-70 Series Airplanes; and Model DC-8-70F Series Airplanes AGENCY:......

  1. A DC Transformer Project

    Data.gov (United States)

    National Aeronautics and Space Administration — During the period of this project three different possible DC transformer concepts were proposed, theoretically modeled, and then experimentally tested with the...

  2. Maximum Power Point Tracking Controller for Thermoelectric Generators with Peak Gain Control of Boost DC-DC Converters

    Science.gov (United States)

    Park, Jungyong; Kim, Shiho

    2012-06-01

    An analog maximum power point tracking (MPPT) circuit for a thermoelectric generator (TEG) is proposed. We show that the peak point of the voltage conversion gain of a boost DC-DC converter with an input voltage source having an internal resistor is the maximum power point of the TEG. The key characteristic of the proposed MPPT controller is that the duty ratio of the input clock pulse to the boost DC-DC converter shifts toward the maximum power point of the TEG by seeking the peak gain point of the boost DC-DC converters. The proposed MPPT technique provides a simple and useful analog MPPT solution, without employing digital microcontroller units.

  3. Pulse on Pulse

    DEFF Research Database (Denmark)

    Schmidt, Ulrik; Carlson, Merete

    2012-01-01

    and pulsating ‘room’. Hence, the visitors in Pulse Room are invited into a complex scenario that continuously oscillates between various aspects of signification (the light bulbs representing individual lives; the pulse itself as the symbolic ‘rhythm of life’) and instants of pure material processuality......“Pulse on Pulse” investigates the relation between signifying processes and non-signifying material dynamism in the installation Pulse Room (2006-) by Mexican Canadian artist Rafael Lozano-Hemmer. In Pulse Room the sense of pulse is ambiguous. Biorhythms are transmitted from the pulsing energy...... of the visitor’s beating heart to the blink of a fragile light bulb, thereby transforming each light bulb into a register of individual life. But at the same time the blinking light bulbs together produce a chaotically flickering light environment composed by various layers of repetitive rhythms, a vibrant...

  4. Radiation Effects on DC-DC Converters

    Science.gov (United States)

    Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2001-01-01

    In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25

  5. Very-short-pulse modulator using asymmetric thyristors

    Science.gov (United States)

    Perol, P.

    1984-09-01

    The development of a semiconductor delay-line modulator for a 40-nsec/pulse 10-kHz-repetition-rate coaxial magnetron radar used to monitor airport runway traffic is reported and illustrated with circuit diagrams, output spectra, and photographs. The problems presented by the design specifications are indicated, and the solutions adopted (asymmetric press-packed thyristors and ferrite pulse transformer) are explained. Pulse widths and peak powers with 16 nf of delay line and a 2.5-kV charge at the level of the modulator are found to be 120 nsec and 58 kW without truncation and 40 nsec and 50-51 kW with truncation, the latter corresponding to an efficiency of 17 percent. The pulse leading edges have dI/dt at the transformer primary = 1.8 kA/microsec and dV/dt at the magnetron = 160 kV/microsec.

  6. -AgCoO2/-ZnO heterojunction diode grown by rf magnetron sputtering

    Indian Academy of Sciences (India)

    K A Vanaja; Umananda M Bhatta; R S Ajimsha; S Jayalekshmi; M K Jayaraj

    2008-10-01

    -type transparent semiconducting AgCoO2 thin films were deposited by rf magnetron sputtering of sintered AgCoO2 target. The AgCoO2 films grown by rf sputtering were highly -axis oriented showing only (001) reflections in the X-ray diffraction pattern unlike in the case of amorphous films grown by pulsed laser deposition (PLD). The bulk powder of AgCoO2 was synthesized by hydrothermal process. The optical bandgap was estimated as 4.15 eV and has a transmission of about 50% in the visible region. The temperature dependence of conductivity shows a semiconducting behaviour. The positive sign of Seebeck coefficient (+220 VK–1) indicates -type conductivity. Transparent – heterojunction on glass substrate was fabricated by rf magnetron sputtering of -AgCoO2 and -type ZnO : Al thin films. The structure of the diode was glass/ITO/-ZnO/-AgCoO2. The junction between -AgCoO2 and -ZnO was found to be rectifying.

  7. Determination of flux ionization fraction using a quartz crystal microbalance and a gridded energy analyzer in an ionized magnetron sputtering system

    Science.gov (United States)

    Green, K. M.; Hayden, D. B.; Juliano, D. R.; Ruzic, D. N.

    1997-12-01

    A diagnostic which combines a quartz crystal microbalance (QCM) and a gridded energy analyzer has been developed to measure the metal flux ionization fraction in a modified commercial dc magnetron sputtering device. The sensor is mounted on a linear motion feedthrough and embedded in a slot in the substrate plane to allow for measuring the uniformity in deposition and ionization throughout the plane of the wafer. Radio-frequency (rf) power is introduced through a coil to ionize the Al atoms. The metal flux ionization fraction at the QCM is determined by comparing the total deposition rate with and without a bias that screens out the ions, but that leaves the plasma undisturbed. By varying the voltage applied to the grids, the plasma potential is determined. At a pressure of 35 mTorr, a magnetron power of 2 kW, and a net rf power of 310±5 W, 78±5% ionization was found.

  8. 75 FR 38943 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-30, DC...

    Science.gov (United States)

    2010-07-07

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-30, DC-10-30F (KDC-10), DC-10-40, and DC-10-40F Airplanes AGENCY... propose to adopt a new airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-30, DC-10-30F (KDC-10), DC-10- 40, and DC-10-40F airplanes. This proposed AD would require......

  9. Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)

    CERN Document Server

    Li, T Q; Tsuji, Y; Ohsawa, T; Komiyama, H

    2002-01-01

    The initial growth and texture formation mechanism of titanium nitride (TiN) films were investigated by depositing TiN films on (111) silicon substrates by using reactive magnetron sputtering of a Ti metallic target under a N sub 2 /Ar atmosphere, and then analyzing the films in detail by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Two power sources for the sputtering, dc and rf, were compared. At the initial growth stage, a continuous amorphous film containing randomly oriented nuclei was observed when the film thickness was about 3 nm. The nuclei grew and formed a polycrystalline layer when the film thickness was about 6 nm. As the film grew further, its orientation changed depending on the deposition conditions. For dc sputtering, the appearance of (111) or (200)-preferred orientations depended on the N sub 2 partial pressure, and the intensity of the preferred orientation increased with increasing film thickness. For rf sputtering, however, when the film thickness was small (...

  10. Prototype of Pulse Width Modulation Generator Based on Timer 555 and IRF 40

    Directory of Open Access Journals (Sweden)

    Wahyu Sapto Aji

    2008-08-01

    Full Text Available In many applications such of DC motor speed regulation commonly needed DC to DC voltage conversion. The method that frequently use for DC to DC conversion is using chopper circuit. In chopper circuit a DC voltage source being chopped at constant frequency but with variable duty cycle (in this case it’s called as Pulse Width Modulation, PWM. In this research a circuit chopper has been design successfully. The circuit uses 555 timer IC as PWM pulse shaper and IRF 40 power Mosfet as switch device. This circuit prototype successfully tested to drive a 12 watt DC motor at 1200 rpm with voltage at 12 V.

  11. An FPGA Based Controller for a SOFC DC-DC Power System

    Directory of Open Access Journals (Sweden)

    Kanhu Charan Bhuyan

    2013-01-01

    Full Text Available Fuel cells are an attractive option for alternative power and of use in a variety of applications. This paper proposes a state space model for the solid oxide fuel cell (SOFC based power system that comprises fuel cell, DC-DC buck converter, and load. In this investigation we have taken up a case study for SOFC feeding a DC load where a DC-DC buck converter acts as the interface between the load and the source. A proportional-integral (PI controller is used in conjunction with pulse width modulation (PWM that computes the pulse width and switches the MOSFET at the right instant so that the desired voltage is obtained. The proposed model is validated through extensive simulation using MATLAB/SIMULINK. Controller for the fuel cell power system (FCPS is prototyped using XC3S500E development board containing a SPARTAN 3E Xilinx FPGA that simplifies the entire control circuit besides providing additional flexibility for further improvement. The results clearly indicate improved performance and validate our proposed model.

  12. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  13. A new solid state extractor pulser for the FNAL magnetron ion source

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S. [Fermilab; Lackey, J. [Fermilab; Larson, J. [Fermilab; Triplett, K. [Fermilab

    2015-10-05

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  14. A new solid state extractor pulser for the FNAL magnetron ion source

    Energy Technology Data Exchange (ETDEWEB)

    Bollinger, D. S., E-mail: bollinger@fnal.gov; Lackey, J.; Larson, J.; Triplett, K. [Proton Source Department, Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States)

    2016-02-15

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  15. Relativistic Magnetron Priming Experiments and Theory

    Science.gov (United States)

    2010-03-29

    materials. Extracted from Ahrens, T. J., and F Wooten , "Electrical Conductivity Induced in Insulators by Pulsed Radiation...Plasma Lifetime Calculations,” AIAA 2003-1189, p 8, Jan, 2003. 3. Ahrens, T. J., and F Wooten , "Electrical Conductivity Induced in

  16. Radiation-Tolerant DC-DC Converters

    Science.gov (United States)

    Skutt, Glenn; Sable, Dan; Leslie, Leonard; Graham, Shawn

    2012-01-01

    A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).

  17. Bidirectional dc-to-dc Power Converter

    Science.gov (United States)

    Griesbach, C. R.

    1986-01-01

    Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.

  18. Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films

    Science.gov (United States)

    Hellgren, Niklas; Macák, Karol; Broitman, Esteban; Johansson, Mats P.; Hultman, Lars; Sundgren, Jan-Eric

    2000-07-01

    Carbon nitride CNx thin films were grown by unbalanced dc magnetron sputtering from a graphite target in a pure N2 discharge, and with the substrate temperature Ts kept between 100 and 550 °C. A solenoid coil positioned in the vicinity of the substrate was used to support the magnetic field of the magnetron, so that the plasma could be increased near the substrate. By varying the coil current and gas pressure, the energy distribution and fluxes of N2+ ions and C neutrals could be varied independently of each other over a wide range. An array of Langmuir probes in the substrate position was used to monitor the radial ion flux distribution over the 75-mm-diam substrate, while the flux and energy distribution of neutrals was estimated through Monte Carlo simulations. The structure, surface roughness, and mechanical response of the films are found to be strongly dependent on the substrate temperature, and the fluxes and energies of the deposited particles. By controlling the process parameters, the film structure can thus be selected to be amorphous, graphite-like or fullerene-like. When depositing at 3 mTorr N2 pressure, with Ts>200 °C, a transition from a disordered graphite-like to a hard and elastic fullerene-like structure occurred when the ion flux was increased above ˜0.5-1.0 mA/cm2. The nitrogen-to-carbon concentration ratio in the films ranged from ˜0.1 to 0.65, depending on substrate temperature and gas pressure. The nitrogen film concentration did, however, not change when varying the nitrogen ion-to-carbon atom flux ratios from ˜1 to 20.

  19. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  20. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  1. Intelligent dc-dc Converter Technology Developed and Tested

    Science.gov (United States)

    Button, Robert M.

    2001-01-01

    The NASA Glenn Research Center and the Cleveland State University have developed a digitally controlled dc-dc converter to research the benefits of flexible, digital control on power electronics and systems. Initial research and testing has shown that conventional dc-dc converters can benefit from improved performance by using digital-signal processors and nonlinear control algorithms.

  2. Controller for computer control of brushless dc motors. [automobile engines

    Science.gov (United States)

    Hieda, L. S. (Inventor)

    1981-01-01

    A motor speed and torque controller for brushless d.c. motors provides an unusually smooth torque control arrangement. The controller provides a means for controlling a current waveform in each winding of a brushless dc motor by synchronization of an excitation pulse train from a programmable oscillator. Sensing of torque for synchronization is provided by a light beam chopper mounted on the motor rotor shaft. Speed and duty cycle are independently controlled by controlling the frequency and pulse width output of the programmable oscillator. A means is also provided so that current transitions from one motor winding to another is effected without abrupt changes in output torque.

  3. Experimental observation of further frequency upshift from dc to ac radiation converter with perpendicular dc magnetic field

    Science.gov (United States)

    Higashiguchi; Yugami; Gao; Niiyama; Sasaki; Takahashi; Ito; Nishida

    2000-11-20

    A frequency upshift of a short microwave pulse is generated by the interaction between a relativistic underdense ionization front and a periodic electrostatic field with a perpendicular dc magnetic field. When the dc magnetic field is applied, further frequency upshift of 3 GHz is observed with respect to an unmagnetized case which has typically a GHz range. The radiation frequency depends on both the plasma density and the strength of the dc magnetic field, i.e., the plasma frequency and the cyclotron frequency. The frequency of the emitted radiation is in reasonable agreement with the theoretical values.

  4. ASDTIC control and standardized interface circuits applied to buck, parallel and buck-boost dc to dc power converters

    Science.gov (United States)

    Schoenfeld, A. D.; Yu, Y.

    1973-01-01

    Versatile standardized pulse modulation nondissipatively regulated control signal processing circuits were applied to three most commonly used dc to dc power converter configurations: (1) the series switching buck-regulator, (2) the pulse modulated parallel inverter, and (3) the buck-boost converter. The unique control concept and the commonality of control functions for all switching regulators have resulted in improved static and dynamic performance and control circuit standardization. New power-circuit technology was also applied to enhance reliability and to achieve optimum weight and efficiency.

  5. Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

    OpenAIRE

    Fernandes, P. A.; Salomé, P M P; Cunha, A. F. da; Schubert, Björn-Arvid

    2010-01-01

    In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis....

  6. Ultra-High and Near-Zero Refractive Indices of Magnetron Sputtered Thin-Film Metamaterials Based on TixOy

    Directory of Open Access Journals (Sweden)

    Vukoman Jokanović

    2016-01-01

    Full Text Available Metamaterials based on TixOy with ultra-high and near-zero refractive indices were obtained by DC magnetron sputtering. The data on refractive indices, extinction coefficients, film thickness, and band gaps, obtained by spectroscopic ellipsometry, showed very high potential of these materials as metamaterials. Phase analysis performed by XRD revealed the presence of titanium phases with lower titanium oxidation states resulting from high concentration of oxygen vacancies, which are crucial for such extraordinary jumps and drops of refractive indices. Numerous band gaps for direct and indirect electron transitions additionally confirmed unique properties of these materials.

  7. 75 FR 20790 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Science.gov (United States)

    2010-04-21

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F... (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC- 10A and KDC-10), DC-10-40, DC-10-40F, MD-10-10F, MD-10-30F, MD-11, and MD-11F airplanes. This proposed......

  8. 75 FR 68246 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Science.gov (United States)

    2010-11-05

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F... to supersede an existing airworthiness directive (AD) that applies to all Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F, MD-10-......

  9. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, w

  10. Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

    Directory of Open Access Journals (Sweden)

    C. Srisang

    2012-01-01

    Full Text Available DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3 content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift in G wavenumber and the decrease in ID/IG inform that sp3 content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.

  11. Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    Shayestehaminzadeh, Seyedmohammad, E-mail: ses30@hi.is, E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.; Olafsson, Sveinn [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland)

    2015-11-15

    This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  12. Three-port DC-DC converter with new integrated transformer for DC Distribution Systems

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Andersen, Michael A. E.

    2014-01-01

    A new integrated transformer for three-port dc-dc converter is proposed to overcome the power coupling effect existed in some known multiple inputs dc-dc converters. Orthogonal primary windings arrangement and in series connection of diagonal secondary Windings enables a fully power decoupling...

  13. Microstructure and He desorption behaviors of He charged FeCrNi-based films fabricated by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, L. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Wang, X.P., E-mail: xpwang@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Liu, F. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Gao, Y.X. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Zhang, T., E-mail: zhangtao@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China); Luo, G.N. [Institute of Plasma Physics, Chinese Academy of Sciences, P.O. Box 1126, Hefei 230031 (China); Fang, Q.F.; Liu, C.S. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031 (China)

    2015-08-31

    He-charged FeCrNi-based films were prepared at different temperatures in a mixed atmosphere of He and Ar by direct-current magnetron sputtering method. X-ray diffraction and energy dispersive spectrometry analysis confirmed the typical austenitic structure of the deposited FeCrNi films and the compositions were in good accordance with 304 stainless steel target. Cross-sectional scanning electron microscopy images revealed the dense columnar nanocrystalline structure of the fabricated FeCrNi films. Nanoindentation measurements showed that the film fabricated at 300 °C exhibited the highest hardness value of 11.5 GPa. He desorption from FeCrNi-based films was traced by thermal desorption spectroscopy; the relatively low He desorption temperature range (150 °C–450 °C) implied that the charged He atoms were mainly located in interstitial sites of FeCrNi-based films. - Highlights: • He-charged columnar nanocrystalline FeCrNi films were prepared by DC magnetron sputtering. • Substrate temperature of 300 °C and He/Ar ratio 1:1 were the best sputtering parameters. • Compact and uniform microstructure obtained at 300 °C resulted in stable, high hardness. • Two He atoms' absorption/desorption mechanisms were revealed by TDS.

  14. Modeling and experimental studies of a side band power re-injection locked magnetron

    Science.gov (United States)

    Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

    2016-12-01

    A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  15. Overview of Multi-DC-Bus Solutions for DC Microgrids

    DEFF Research Database (Denmark)

    Ricchiuto, D.; Mastromauro, R.A.; Liserre, Marco;

    2013-01-01

    DC Microgrids have recently received a lot of attention in the last years due to high penetration of renewable energy sources as well as distributed energy storage systems. In the future DC microgrids could be preferable respect to AC microgrids in terms of redundancy since multi-DC-Bus solutions...... could provide a continuative power supply to the loads. An overview of Multi-DC-Bus solutions is presented in this paper. The performances are compared on the basis of possible DC microgrid configurations, redundancy, different DC voltage levels....

  16. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  17. 75 FR 60602 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Science.gov (United States)

    2010-10-01

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F.... ACTION: Final rule. SUMMARY: We are adopting a new airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40,......

  18. 75 FR 23571 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Science.gov (United States)

    2010-05-04

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F.... ACTION: Final rule. SUMMARY: We are adopting a new airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40,......

  19. Time delay control for fuel cells with bidirectional DC/DC converter and battery

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.B. [Mechanical Engineering Department, Chonnam National University, Gwangju (Korea); Kang, S.J. [Mechatronics Engineering Department, Korea Polytechnic College V, Gwangju (Korea)

    2010-08-15

    Transient behavior is a key property in the vehicular application of proton exchange membrane (PEM) fuel cells. A better control technology is constructed to increase the transient performance of PEM fuel cells. A steady-state isothermal analytical fuel cell model is constructed to analyze mass transfer and water transport in the membrane. To prevent the starvation of air in the PEM fuel cell, time delay control is used to regulate the optimum stoichiometric amount of oxygen, although dynamic fluctuations exist in the PEM fuel cell power. A bidirectional DC/DC converter connects the battery to the DC link to manage the power distribution between the fuel cell and the battery. Dynamic evolution control (DEC) allows for adequate pulse-width modulation (PWM) control of the bidirectional DC/DC converter with fast response. Matlab/Simulink/Simpower simulation is performed to validate the proposed methodology, increase the transient performance of the PEM fuel cell system and satisfy the requirement of energy management. (author)

  20. Pengendali Kecepatan Motor Dc Menggunakan Sensor Hall Berbasis Mikrokontroler ATMega 8535

    OpenAIRE

    Sinaga, Roni

    2013-01-01

    Has designed a DC motor speed control device using sensor hall based microcontroller ATMega8535. Generally, this instrument consists of a dc motor, hall sensor, microcontroller and driver. This instrument is used to control dc motor speed rotary by setting the pulse width modulation (PWM) which provided, to maintain the stability of the motor even though the motor disorder of load changes. In general, the workings of these instruments is microcontroller will compare the motor rotation speed t...

  1. Controlling DC Motor using Microcontroller (PIC16F72) with PWM

    OpenAIRE

    Shruti Shrivastava, Jageshwar Rawat, Amit Agrawal

    2012-01-01

    Motion control plays a vital role in industrial atomization. Different types of motors AC, DC, SERVO or stepper are used depending upon the application; of these DC motors are widely used because of easier controlling. Among the different control methods for DC motor armature voltage control method using pulse width modulation (PWM) is best one. We can realize the PWM using H-bridge built with IGBT switches or transistors. To generate PWM signals we use PIC16F7...

  2. Recovery of consciousness in broilers following combined dc and ac stunning

    Science.gov (United States)

    Broilers in the United States are typically electrically stunned using low voltage-high frequency pulsed DC water bath stunners and in the European Union broilers are electrocuted using high voltage-low frequency AC. DC stunned broilers regain consciousness in the absence of exsanguination and AC st...

  3. Structural and electrical properties of DC sputtered molybdenum films

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G.; Grizalez, M.; Hernandez, L.C. [Laboratorio de Celdas Solares, Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia)

    1998-02-27

    A method is described for the fabrication of low-resistivity molybdenum films on soda-lime glass substrates. Films have been deposited using a DC magnetron sputtering system with a S-gun configuration, and have been characterized through X-ray diffraction, electrical conductivity, and Hall mobility measurements. The influence of the deposition parameters on both the resistivity of the Mo and on the contact resistivity of the Mo/CuInSe{sub 2}/Mo structure has been studied. Values of resistivity ranging from 1.2x10{sup -5} to 36x10{sup -5} {Omega} cm and of contact resistivity ranging from 0.025 to 0.15 {Omega} cm{sup 2} were found

  4. Motor control for a brushless DC motor

    Science.gov (United States)

    Peterson, William J. (Inventor); Faulkner, Dennis T. (Inventor)

    1985-01-01

    This invention relates to a motor control system for a brushless DC motor having an inverter responsively coupled to the motor control system and in power transmitting relationship to the motor. The motor control system includes a motor rotor speed detecting unit that provides a pulsed waveform signal proportional to rotor speed. This pulsed waveform signal is delivered to the inverter to thereby cause an inverter fundamental current waveform output to the motor to be switched at a rate proportional to said rotor speed. In addition, the fundamental current waveform is also pulse width modulated at a rate proportional to the rotor speed. A fundamental current waveform phase advance circuit is controllingly coupled to the inverter. The phase advance circuit is coupled to receive the pulsed waveform signal from the motor rotor speed detecting unit and phase advance the pulsed waveform signal as a predetermined function of motor speed to thereby cause the fundamental current waveform to be advanced and thereby compensate for fundamental current waveform lag due to motor winding reactance which allows the motor to operate at higher speeds than the motor is rated while providing optimal torque and therefore increased efficiency.

  5. Phase and Frequency Locked Magnetrons for SRF Sources

    Energy Technology Data Exchange (ETDEWEB)

    Neubauer, Michael [Muons, Inc.; Johnson, Rolland

    2014-09-12

    There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

  6. DC-DC powering for the CMS pixel upgrade

    Science.gov (United States)

    Feld, Lutz; Fleck, Martin; Friedrichs, Marcel; Hensch, Richard; Karpinski, Waclaw; Klein, Katja; Rittich, David; Sammet, Jan; Wlochal, Michael

    2013-12-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R&D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to 24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  7. DC-DC Powering for the CMS Pixel Upgrade

    CERN Document Server

    Feld, Lutz Werner; Marcel Friedrichs; Richard Hensch; Karpinski, Waclaw; Klein, Katja; Rittich, David Michael; Sammet, Jan Domenik; Wlochal, Michael

    2013-01-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R and D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  8. Coiled transmission line pulse generators

    Energy Technology Data Exchange (ETDEWEB)

    McDonald, Kenneth Fox (Columbia, MO)

    2010-11-09

    Methods and apparatus are provided for fabricating and constructing solid dielectric "Coiled Transmission Line" pulse generators in radial or axial coiled geometries. The pour and cure fabrication process enables a wide variety of geometries and form factors. The volume between the conductors is filled with liquid blends of monomers, polymers, oligomers, and/or cross-linkers and dielectric powders; and then cured to form high field strength and high dielectric constant solid dielectric transmission lines that intrinsically produce ideal rectangular high voltage pulses when charged and switched into matched impedance loads. Voltage levels may be increased by Marx and/or Blumlein principles incorporating spark gap or, preferentially, solid state switches (such as optically triggered thyristors) which produce reliable, high repetition rate operation. Moreover, these Marxed pulse generators can be DC charged and do not require additional pulse forming circuitry, pulse forming lines, transformers, or an a high voltage spark gap output switch. The apparatus accommodates a wide range of voltages, impedances, pulse durations, pulse repetition rates, and duty cycles. The resulting mobile or flight platform friendly cylindrical geometric configuration is much more compact, light-weight, and robust than conventional linear geometries, or pulse generators constructed from conventional components. Installing additional circuitry may accommodate optional pulse shape improvements. The Coiled Transmission Lines can also be connected in parallel to decrease the impedance, or in series to increase the pulse length.

  9. 直流脉冲电场作用下纳米碳材料的相变与金刚石的合成%Phase Change of Nano Carbon Materials and Diamond Synthesis Under Effect of DC Pulsed Electric Field

    Institute of Scientific and Technical Information of China (English)

    张法明

    2015-01-01

    放电等离子烧结(SPS)是先进的基于 ON- OFF 直流脉冲电场活化和压力活化的烧结技术。文章综述了发现碳纳米管在 SPS 直流脉冲电场作用下以兆帕量级的压力可以部分相变为金刚石的过程;然后揭示了碳纳米管、富勒烯、石墨烯在直流脉冲电场作用下的热稳定性和相变为金刚石的机理;接着综述了实验条件参数对 SPS 金刚石合成的影响,以及采用 SPS 所合成的金刚石制备得到的金刚石/铜复合材料。最后,对 SPS 这种合成金刚石的新技术的未来前景进行了展望。%Spark plasma sintering (SPS)is an advanced sintering process based on the ON-OFF DC pulse electric field activation and pressure activation.The discovery of the process in which the Mpa scale pressure of CNT(carbon nano tube)under the SPS DC pulse electric field effect can partially phase into diamond has been summarized in this ar-tical.Then the thermostability and machenism of phase change of CNT,fullerene and graphene into diamond have been revealed.Then the influence of experimental condition parameters on the SPS diamond synthesis has been summarized and the diamond/copper composite prepared by diamond synthesized through SPS technique has been introduced. Finally,the perspective of this new technique of diamond sythesis by SPS process has been predicted.

  10. Early Oscillation Detection for DC/DC Converter Fault Diagnosis

    Science.gov (United States)

    Wang, Bright L.

    2011-01-01

    The electrical power system of a spacecraft plays a very critical role for space mission success. Such a modern power system may contain numerous hybrid DC/DC converters both inside the power system electronics (PSE) units and onboard most of the flight electronics modules. One of the faulty conditions for DC/DC converter that poses serious threats to mission safety is the random occurrence of oscillation related to inherent instability characteristics of the DC/DC converters and design deficiency of the power systems. To ensure the highest reliability of the power system, oscillations in any form shall be promptly detected during part level testing, system integration tests, flight health monitoring, and on-board fault diagnosis. The popular gain/phase margin analysis method is capable of predicting stability levels of DC/DC converters, but it is limited only to verification of designs and to part-level testing on some of the models. This method has to inject noise signals into the control loop circuitry as required, thus, interrupts the DC/DC converter's normal operation and increases risks of degrading and damaging the flight unit. A novel technique to detect oscillations at early stage for flight hybrid DC/DC converters was developed.

  11. Microstructural characteristics and mechanical properties of magnetron sputtered nanocrystalline TiN films on glass substrate

    Indian Academy of Sciences (India)

    Vipin Chawla; R Jayaganthan; Ramesh Chandra

    2009-04-01

    Nanocrystalline TiN thin films were deposited on glass substrate by d.c. magnetron sputtering. The microstructural characteristics of the thin films were characterized by XRD, FE-SEM and AFM. XRD analysis of the thin films, with increasing thickness, showed the (200) preferred orientation up to 1.26 m thickness and then it transformed into (220) and (200) peaks with further increase in thickness up to 2.83 m. The variation in preferred orientation was due to the competition between surface energy and strain energy during film growth. The deposited films were found to be very dense nanocrystalline film with less porosity as evident from their FE-SEM and AFM images. The surface roughness of the TiN films has increased slightly with the film thickness as observed from its AFM images. The mechanical properties of TiN films such as hardness and modulus of elasticity () were investigated by nanoindentation technique. The hardness of TiN thin film was found to be thickness dependent. The highest hardness value (24 GPa) was observed for the TiN thin films with less positive micro strain.

  12. Microstructural and magnetic properties of thick ({>=}10 {mu}m) magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Dehlinger, A.S. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Le Berre, M., E-mail: martine.leberre@insa-lyon.f [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Canut, B. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Chatelon, J.P. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France); Albertini, D. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Perrot, S. [RADIALL, Voiron F-38500 (France); Givord, D. [Institut Louis Neel, UPR 5051, Grenoble F-38042 (France); Rousseau, J.J. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France)

    2010-11-15

    This work focuses on the properties of 10-15 {mu}m thick barium M-type hexaferrite (BaFe{sub 12}O{sub 19} or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 {mu}m/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.

  13. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  14. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  15. Studies on Magnetron Sputtered ZnO-Ag Films: Adhesion Activity of S. aureus

    Science.gov (United States)

    Geetha, S. R.; Dhivya, P.; Raj, P. Deepak; Sridharan, M.; Princy, S. Adline

    Zinc oxide (ZnO) thin films have been deposited onto thoroughly cleaned stainless steel (AISI SS 304) substrates by reactive direct current (dc) magnetron sputtering and the films were doped with silver (Ag). The prepared thin films were analyzed using X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) to investigate the structural and morphological properties. The thickness values of the films were in the range of 194 to 256nm. XRD results revealed that the films were crystalline with preferred (002) orientation. Grain size values of pure ZnO films were found to be 19.82-23.72nm. On introducing Ag into ZnO film, the micro-structural properties varied. Adhesion test was carried out with Staphylococcus aureus (S. aureus) in order to know the adherence property of the deposited films. Colony formation units (CFU) were counted manually and bacterial adhesion inhibition (BAI) was calculated. We observed a decrease in the CFU on doping Ag in the ZnO films. BAI of the film deposited at - 100 V substrate bias was found to be increased on Ag doping from 69 to 88%.

  16. Deposition and Characterization of Molybdenum Thin Film Using Direct Current Magnetron and Atomic Force Microscopy

    Directory of Open Access Journals (Sweden)

    Muhtade Mustafa Aqil

    2017-01-01

    Full Text Available In this paper, pure molybdenum (Mo thin film has been deposited on blank Si substrate by DC magnetron sputtering technique. The deposition condition for all samples has not been changed except for the deposition time in order to study the influence of time on the thickness and surface morphology of molybdenum thin film. The surface profiler has been used to measure the surface thickness. Atomic force microscopy technique was employed to investigate the roughness and grain structure of Mo thin film. The thickness and grain of molybdenum thin film layer has been found to increase with respect to time, while the surface roughness decreases. The average roughness, root mean square roughness, surface skewness, and surface kurtosis parameters are used to analyze the surface morphology of Mo thin film. Smooth surface has been observed. From grain analysis, a uniform grain distribution along the surface has been found. The obtained results allowed us to decide the optimal time to deposit molybdenum thin film layer of 20–100 nm thickness and subsequently patterned as electrodes (source/drain in carbon nanotube-channel transistor.

  17. Magnetron Sputtered NbN Films with Nb Interlayer on Mild Steel

    Directory of Open Access Journals (Sweden)

    Kulwant Singh

    2011-01-01

    Full Text Available The aim of the study is to extend the NbN coating on MS with Nb interlayer to explore the benefits of hard nitride coatings on low-cost structural material and to compare the coating with NbN monolithic coating on SS. NbN on MS and SS was deposited by reactive d.c. magnetron sputtering at various N2/Ar flow ratios and substrate bias. Deposition rate decreased from 20 to 10 nm/min (without biasing and from 16 to 8 nm/min (−50 V biasing when N2/Ar ratio was varied from zero to 70%. Deposition rate decreased with the increase in bias voltage. Coatings showed hexagonal β Nb2N, cubic δ NbN, and hexagonal δ′ NbN as major phases with the increasing N2 flow. Surface hardness reached a maximum of 2040 HK25 at a N2/Ar of 20%. Critical loads, for cohesive and adhesive failure for coating on MS, were between 6–8 N and 9–12 N respectively; for coating on SS, the values were between 7–15 N and 12–25 N respectively. Duplex coatings were studied for hardness by Knoop microindentation, adhesion by scratch tester, and corrosion by potentiodynamic polarization technique. Hardness, adhesion, and corrosion resistance all improved when NbN coating was incorporated with Nb interlayer on MS.

  18. Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films

    Institute of Scientific and Technical Information of China (English)

    DU Xin-kang; WANG Tian-min; WANG Cong; CHEN Bu-liang; ZHOU Long

    2007-01-01

    Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from -50 ℃to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure,δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases.Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to -50 ℃, and a remarkable augmentation of transmittance could be noticed under so low a temperature.

  19. 75 FR 6160 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-15, DC...

    Science.gov (United States)

    2010-02-08

    ... Douglas Corporation Model DC- 10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC-10A and KDC-10), DC-10-40, DC-10-40F, MD-10-10F, MD-10-30F, MD-11, and MD-11F Airplanes AGENCY: Federal Aviation... airworthiness directive (AD) for certain Model DC-10-10, DC-10-10F, DC-10-15, DC-10-30, DC-10-30F (KC- 10A...

  20. Deposition of copper coatings in a magnetron with liquid target

    Energy Technology Data Exchange (ETDEWEB)

    Tumarkin, A. V., E-mail: sanyahrustal@mail.ru; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  1. Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications

    Science.gov (United States)

    Adell, Philippe C. (Inventor); Bakkaloglu, Bertan (Inventor); Vermeire, Bert (Inventor); Liu, Tao (Inventor)

    2015-01-01

    A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.

  2. A ZVS PWM control strategy with balanced capacitor current for half-bridge three-level DC/DC converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Chen, Zhe

    2017-01-01

    The capacitor current would be imbalanced under the conventional control strategy in the half-bridge three-level (HBTL) DC/DC converter due to the effect of the output inductance of the power supply and the input line inductance, which would affect the converter's reliability. This paper proposes...... a pulse-wide modulation (PWM) strategy composed of two operation modes for the HBTL DC/DC converter, which can realize the zero-voltage switching (ZVS) for the efficiency improvement. In addition, a capacitor current balancing control is proposed by alternating the two operation modes of the proposed ZVS...... PWM strategy, which can eliminate the current imbalance among the two input capacitors. Therefore, the proposed control strategy can improve the converter's performance and reliability in: 1) reducing the switching losses and noises of the power switches; 2) balancing the thermal stresses...

  3. Control of improved full-bridge three-level DC/DC converter for wind turbines in a DC grid

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2013-01-01

    transformer in the IFBTL dc/dc converter. A modulation strategy, including two operation modes, is proposed for the IFBTL dc/dc converter. Then, a voltage balancing control strategy is proposed for the IFBTL dc/dc converter. Furthermore, the control of the wind turbine based on the IFBTL dc/dc converter......This paper presents an improved full-bridge three-level (IFBTL) dc/dc converter for a wind turbine in a dc grid by inserting a passive filter into the dc/dc converter to improve the performance of the converter. The passive filter can effectively reduce the voltage stress of the medium frequency...... in a dc-grid system is presented. Finally, a small-scale IFBTL dc/dc converter prototype was built and tested in the laboratory, and the results verify the theoretical analysis....

  4. Optical properties of d.c. magneto sputtered tantalum and titanium nanostructure thin film metal hydrides

    Indian Academy of Sciences (India)

    M Singh; S Srivastava; S Agarwal; S Kumar; Y K Vijay

    2010-10-01

    Nanostructured thin films of tantalum and titanium were deposited on glass substrate using d.c. magnetron sputtering technique under the argon gas environment at a pressure of 0.1 mbar. Optical transmission and absorption studies were carried out for these samples with pressure of hydrogen. Large changes in both transmission and absorption on loading these films with hydrogen are accompanied by significant phase changes and electronic transformation. Optical photograph shows the colour variation after hydrogenation in case of tantalum film which may be used as decorative mirrors and hydrogen sensors. The hydrogen storage capability of thin films was confirmed by variation in optical properties.

  5. DC-DC Type High-Frequency Link DC for Improved Power Quality of Cascaded Multilevel Inverter

    Science.gov (United States)

    Sadikin, Muhammad; Senjyu, Tomonobu; Yona, Atsushi

    2013-06-01

    Multilevel inverters are emerging as a new breed of power converter options for power system applications. Recent advances in power switching devices enabled the suitability of multilevel inverters for high voltage and high power applications because they are connecting several devices in series without the need of component matching. Usually, a transformerless battery energy storage system, based on a cascaded multilevel inverter, is used as a measure for voltage and frequency deviations. System can be reduced in size, weight, and cost of energy storage system. High-frequency link circuit topology is advantageous in realizing compact and light-weight power converters for uninterruptible power supply systems, new energy systems using photovoltaic-cells, fuel-cells and so on. This paper presents a DC-DC type high-frequency link DC (HFLDC) cascaded multilevel inverter. Each converter cell is implemented a control strategy for two H-bridge inverters that are controlled with the same multicarrier pulse width modulation (PWM) technique. The proposed cascaded multilevel inverter generates lower voltage total harmonic distortion (THD) in comparison with conventional cascaded multilevel inverter. Digital simulations are carried out using PSCAD/EMTDC to validate the performance of the proposed cascaded multilevel inverter.

  6. A Dual-Mode Step-up DC/DC Converter IC with Current-Limiting and EMI Reduction Techniques

    Institute of Scientific and Technical Information of China (English)

    Wan-Rone Liou; Chun-Ting Kuo; Mei-Ling Yeh; Ping-Hsing Chen; Marynelle L. Z. Rosales

    2008-01-01

    This paper presents a novel dual-mode step-up (boost) DC/DC converter. Pulse-frequency modulation (PFM) is used to improve the efficiency at light load. This converter can operate between pulse-width modulation (PWM) and pulse-frequency modulation. The converter will operate in PFM mode at light load and in PWM mode at heavy load. The maximum conversion efficiency of this converter is 96%. The conversion efficiency is greatly improved when load current is below 100 mA. Additionally, a soft-start circuit and a variable-sawtooth frequency circuit are proposed in this paper. The former is used to avoid the large switching current at the start up of the converter and the latter is utilized to reduce the EMI of the converter.

  7. Application of magnetron sputtering for producing bioactive ceramic coatings on implant materials

    Indian Academy of Sciences (India)

    J Z Shi; C Z Chen; H J Yu; S J Zhang

    2008-11-01

    Radio frequency (RF) magnetron sputtering is a versatile deposition technique that can produce thin, uniform, dense calcium phosphate coatings. In this paper, principle and character of magnetron sputtering is introduced, and development of the hydroxyapatite and its composite coatings application is reviewed. In addition, influence of heat treatment on magnetron sputtered coatings is discussed. The heat treated coatings have been shown to exhibit bioactive behaviour both in vivo and in vitro. At last, the future application of the bioactive ceramic coating deposited by magnetron sputtering is mentioned.

  8. Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Model

    Science.gov (United States)

    Kadlec, Stanislav; Čapek, Jiří

    2017-05-01

    A tendency to disappearing hysteresis in reactive High Power Impulse Magnetron Sputtering (HiPIMS) has been reported previously without full physical explanation. An analytical model of reactive pulsed sputtering including HiPIMS is presented. The model combines a Berg-type model of reactive sputtering with the global HiPIMS model of Christie-Vlček. Both time and area averaging is used to describe the macroscopic steady state, especially the reactive gas balance in the reactor. The most important effect in the presented model is covering of reacted parts of target by the returning ionized metal, effectively lowering the target coverage by reaction product at a given partial pressure. The return probability of ionized sputtered metal has been selected as a parameter to quantify the degree of HiPIMS effects. The model explains the reasons for reduced hysteresis in HiPIMS. The critical pumping speed was up to a factor of 7 lower in reactive HiPIMS compared to the mid-frequency magnetron sputtering. The model predicts reduced hysteresis in HiPIMS due to less negative slope of metal flux to substrates and of reactive gas sorption as functions of reactive gas partial pressure. Higher deposition rate of reactive HiPIMS compared to standard reactive sputtering is predicted for some parameter combinations. Comparison of the model with experiment exhibits good qualitative and quantitative agreement for three material combinations, namely, Ti-O2, Al-O2, and Ti-N2.

  9. 75 FR 47242 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-9-14, DC-9-15, and DC-9-15F...

    Science.gov (United States)

    2010-08-05

    ... Corporation Model DC- 9-14, DC-9-15, and DC-9-15F Airplanes; and Model DC-9-20, DC-9-30, DC- 9-40, and DC-9-50... airworthiness directive (AD) that applies to certain Model DC-9-14 and DC-9-15 airplanes; and Model DC-9-20, DC-9-30, DC-9-40, and DC-9-50 series airplanes. The existing AD currently......

  10. Isolated Bidirectional DC-DC Converter for Hybrid Electric Vehicle Application

    Science.gov (United States)

    2006-06-13

    34Approved for public release: distribution is unlimited" Isolated Bidirectional DC-DC Converter for Hybrid Electric Vehicle Applications Sonya...requirements for DC-DC converters for electric and hybrid vehicles . This paper introduces a bidirectional, isolated DC-DC converter for medium power...the design and build of a medium power DC-DC converter . Key words: Power Converter , DC-DC, Hybrid Electric Vehicle , Battery, Galvanically Isolation

  11. Experimental validation of a high voltage pulse measurement method.

    Energy Technology Data Exchange (ETDEWEB)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  12. Enhanced DC-operated electroluminescence of forwardly aligned p/MQW/n InGaN nanorod LEDs via DC offset-AC dielectrophoresis.

    Science.gov (United States)

    Eo, Yun Jae; Yoo, Gang Yeol; Kang, Hyelim; Lee, Youngki; Kim, Chan Sik; Oh, Ji Hye; Lee, Keyong Nam; Kim, Woong; Do, Young Rag

    2017-10-11

    We introduce orientation-controlled alignment process of p-GaN/InGaN multi quantum-well/n-GaN (p/MQW/n InGaN) nanorod light-emitting diodes (LEDs) by applying direct-current (DC) offset alternating-current (AC) or pulsed DC electric fields across interdigitated metal electrodes. The as-forwardly aligned p/MQW/n InGaN nanorod LEDs by a pulsed DC dielectrophoresis (DEP) assembly process improve the electroluminescence (EL) intensities by 1.8 times compared to the conventional AC DEP assembly process under DC electric field operation and exhibit an enhanced applied current and EL brightness in the current-voltage and EL intensity-voltage curves that can be directly used as fundamental data to construct DC-operated nanorod LED devices, such as LED areal surface lightings, scalable lightings (micrometers to inches) and formable surface lightings. The enhancement of the applied current, the improved EL intensity, and the increased number of forwardly aligned p/MQW/n InGaN nanorods in panchromatic cathodoluminescence (CL) images confirm the considerable enhancement of forwardly aligned 1D nanorod LEDs between two opposite electrodes using DC offset-AC or a pulsed DC electric field DEP assembly process. These DC offset-AC or pulsed DC electric field DEP assembly process suggests that designing for these types of interactions could yield new ways to control the orientation of asymmetric p/MQW/n InGaN diode-type LED nanorods with a relatively low aspect ratio.

  13. 75 FR 63040 - Airworthiness Directives; McDonnell Douglas Corporation Model DC-10-10, DC-10-10F, DC-10-30, DC...

    Science.gov (United States)

    2010-10-14

    ... Corporation Model DC- 10-10, DC-10-10F, DC-10-30, DC-10-30F (KDC-10), DC-10-40, and DC-10-40F Airplanes AGENCY..., Room W12-140, 1200 New Jersey Avenue, SE., Washington, DC 20590. FOR FURTHER INFORMATION CONTACT... (b) None. Applicability (c) This AD applies to McDonnell Douglas Corporation Model DC- 10-10,...

  14. Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications.

    Science.gov (United States)

    Vijayaraghavan, Rajani K; Gaman, Cezar; Jose, Bincy; McCoy, Anthony P; Cafolla, Tony; McNally, Patrick J; Daniels, Stephen

    2016-02-01

    We demonstrate the growth of multilayer and single-layer graphene on copper foil using bipolar pulsed direct current (DC) magnetron sputtering of a graphite target in pure argon atmosphere. Single-layer graphene (SG) and few-layer graphene (FLG) films are deposited at temperatures ranging from 700 °C to 920 °C within graphene films formed. The films were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical transmission spectroscopy techniques. Based on the above studies, a diffusion-controlled mechanism was proposed for the graphene growth. A single-step whole blood assay was used to investigate the anticoagulant activity of graphene surfaces. Platelet adhesion, activation, and morphological changes on the graphene/glass surfaces, compared to bare glass, were analyzed using fluorescence microscopy and SEM techniques. We have found significant suppression of the platelet adhesion, activation, and aggregation on the graphene-covered surfaces, compared to the bare glass, indicating the anticoagulant activity of the deposited graphene films. Our production technique represents an industrially relevant method for the growth of SG and FLG for various applications including the biomedical field.

  15. Compherensive Design of a 100 kW/400 V High Performance AC-DC Converter

    OpenAIRE

    2015-01-01

    In this paper, a comprehensive design for a 100kW/400V, three-phase pulse-width modulated (PWM) AC-DC converter is presented that serves as the front-end power supply for wide-range varying active load. This power supply includes two series stages; a six-switch AC-DC boost converter and a DC-DC buck converter to regulate 400VDC at load side. The design of all inductors and capacitors is fulfilled using mathematical expressions. In addition, small signal modelling and controller design are pre...

  16. Implementation of Brushed DC Motor Control in LabVIEW FPGA

    Directory of Open Access Journals (Sweden)

    K. Lamár

    2013-12-01

    Full Text Available The paper introduces the fundamentals of motor control. It explains the basic equations and introduces the control diagram of the brushed DC motor. It introduces the four quadrant DC chopper circuit and the basic methods to operate it. After that, it explains the fundamentals of the current control of DC motors and its two basic methods: the pulse width modulation and the hysteresis current control. Finally it gives a short example of the practical implementation of the hysteresis current controller for the four quadrant DC chopper in LabVIEW FPGA.

  17. Buck DC DC converter using fuzzy logic control for no linear load

    Directory of Open Access Journals (Sweden)

    Rubén Darío Bonilla Isaza

    2016-06-01

    Method: Through Simulink MATLAB was built a DC-DC converter of closed loop, which is placed in series with a controller based on fuzzy logic. The control inputs are the voltage signal and its derivati­ve, and the output is a constant value, which tunes the duty cycle of a pulse modulator (PWM. This ad­just the output of voltage of the controller according to a desired reference. The fuzzy controller was built with membership functions in which linguistic varia­bles that explain when a value of output of voltage must be corrected and when the voltage variation is out of the established ranges between -1 and 1 per­cent of allowable variation were integrated. Results: To evaluate the performance of this type of control compared to a DC-DC converter with control of closed loop of unity gain, obtaining a 40% impro­vement in the integral of area regarding the fuzzy con­troller, with a stabilization time of 0.01s. In non-linear loads, there are random phenomena or own unwan­ted effects of resonance circuit, then was emulated by interrupting cycles of a time-controlled switch.

  18. Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal-gate metal-insulator-semiconductor structures

    Science.gov (United States)

    Tsai, Jung-Ruey; Juan, Pi-Chun; Lin, Cheng-Li; Lin, Guo-Cheng

    2017-01-01

    Metal-gate TiN/ZrN/ZrHfO/p-Si metal-insulator-semiconductor (MIS) structures have been fabricated in this work. The physical and electrical properties were characterized. The crystallization of high-k ZrHfO thin-film is induced by high power impulse magnetron sputtering (HIPIMS) during the deposition of ZrN capping layer. The binding energies and depth profiles were investigated by X-ray photoelectron spectroscopy (XPS). It is found that Zr and Hf out-diffusion from high-k dielectric in samples with HIPIMS is lesser than those in samples with the conventional DC magnetron sputtering (DCMS). The dielectric constant which strongly relates to the tetragonal phase becomes higher and the flatband voltage shift shows smaller by using the HIPIMS method than by the conventional DCMS. The cation and anion vacancies have been investigated by the defect reaction model.

  19. Self-pulsing of a micro thin cathode discharge

    CERN Document Server

    Gebhardt, Markus; Hemke, Torben; Brinkmann, Ralf Peter; Mussenbrock, Thomas

    2011-01-01

    Microplasmas operated at atmospheric pressure show a number of peculiar dynamic phenomena. One of these phenomena is self-pulsing, which is characterized by intrinsic pulsing behavior of a DC driven plasma discharge. This work focuses on the numerical simulation of self-pulsing in a micro thin cathode discharge operated in atmospheric pressure argon. By means of a hybrid plasma model we show self-pulsing of the discharge in the expected MHz frequency range and described its actual origin.

  20. A digitally controlled PWM/PSM dual-mode DC/DC converter

    Institute of Scientific and Technical Information of China (English)

    Zhen Shaowei; Zhang Bo; Luo Ping; Hou Sijian; Ye Jingxin; Ma Xiao

    2011-01-01

    A digitally controlled pulse width modulation/pulse skip modulation (PWM/PSM) dual-mode buck DC/DC converter is proposed.Its operation mode can be automatically chosen as continuous conduction mode (CCM) or discontinuous conduction mode (DCM).The converter works in PSM at DCM and in 2 MHz PWM at CCM.Switching loss is reduced at a light load by skipping cycles.Thus high conversion efficiency is realized in a wide load current.The implementations of PWM control blocks,such as the ADC,the digital pulse width modulator (DPWM) and the loop compensator,and PSM control blocks are described in detail.The parameters of the loop compensator can be programmed for different external component values and switching frequencies,which is much more flexible than its analog rivals.The chip is manufactured in 0.13 μm CMOS technology and the chip area is 1.21 mm2.Experimental results show that the conversion efficiency is high,being 90% at 200 mA and 67% at 20 mA.Meanwhile,the measured load step response shows that the proposed dual-mode converter has good stability.