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Sample records for pt films deposited

  1. Deposition and characterization of Pt nanocluster films by means of gas aggregation cluster source

    Energy Technology Data Exchange (ETDEWEB)

    Kylián, Ondřej, E-mail: ondrej.kylian@gmail.com; Prokeš, Jan; Polonskyi, Oleksandr; Čechvala, Juraj; Kousal, Jaroslav; Pešička, Josef; Hanuš, Jan; Biederman, Hynek

    2014-11-28

    In this study we report on the deposition of Pt nanocluster films prepared by gas aggregation source that was operated with argon as working gas. The aim of this study was optimization of deposition process as well as determination of properties of deposited nanocluster films and their temporal stability. It was found that the production of Pt nanoclusters reached maximum value for pressure of 100 Pa and increases monotonously with magnetron current. The deposition rate at optimized deposition conditions was 0.7 nm of the Pt nanocluster film per second. Deposited films were porous and composed of 4 nm Pt nanoclusters. The nanoclusters were metallic and no sights of their oxidation were observed after 1 year on open air as witnessed by X-ray photoelectron spectroscopy. Regarding the electrical properties, a dramatic decrease of the resistivity was observed with increasing amount of deposited nanoclusters. This decrease saturated for the films approximately 50 nm thick. Such behavior indicates transition between different mechanisms of electrical conductivity: charge hopping for thin discontinuous films and current conduction through conducting path formed when higher amount of nanoclusters is deposited. Different mechanisms of electrical conduction for thin and thick layers of Pt were confirmed by subsequent investigation of temperature dependence of resistivity. In addition, no changes in resistivity were observed after one year on open air that confirms stability of produced Pt nanocluster films. - Highlights: • Pt nanocluster films were deposited by gas aggregation nanocluster source. • Conditions leading to effective deposition of Pt nanocluster films were found. • Deposited nanocluster films have good temporal stability. • Electrical properties of Pt films were found to depend on their thickness.

  2. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    International Nuclear Information System (INIS)

    Liu Xuezhang; Wei Qiuping; Yu Zhiming; Yang Taiming; Zhai Hao

    2013-01-01

    Highlights: ► Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. ► The nucleation density was increased to 10 11 cm −2 . ► Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. ► Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp 3 -bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10 11 cm −2 , and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  3. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuezhang [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Wei Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yu Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yang Taiming; Zhai Hao [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. Black-Right-Pointing-Pointer The nucleation density was increased to 10{sup 11} cm{sup -2}. Black-Right-Pointing-Pointer Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. Black-Right-Pointing-Pointer Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp{sup 3}-bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10{sup 11} cm{sup -2}, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  4. Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

    2017-03-01

    Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

  5. Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

    2006-01-01

    We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

  6. Growth and microstructure of columnar Y-doped SrZrO{sub 3} films deposited on Pt-coated MgO by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Sijun, E-mail: sluo1@tulane.edu; Riggs, Brian C.; Shipman, Joshua T.; Adireddy, Shiva; Sklare, Samuel C.; Chrisey, Douglas B., E-mail: dchrisey@tulane.edu [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Zhang, Xiaodong; Koplitz, Brent [Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States)

    2015-07-21

    Direct integration of proton conductor films on Pt-coated substrates opens the way to film-based proton transport devices. Columnar SrZr{sub 0.95}Y{sub 0.05}O{sub 3−δ} (SZY) films with dense microstructure were deposited on Pt-coated MgO(100) substrates at 830 °C by pulsed laser deposition. The optimal window of ambient O{sub 2} pressure for good crystallinity of SZY films is from 400 to 600 mTorr. The ambient O{sub 2} compresses the plasma plume of SZY and increases the deposition rate. The 10 nm thick Ti adhesion layer on MgO(100) greatly affects the orientation of the sputtered Pt layers. Pt deposited directly on MgO shows a highly (111)-preferred orientation and leads to preferentially oriented SZY films while the addition of a Ti adhesion layer makes Pt show a less preferential orientation that leads to randomly oriented SZY films. The RMS surface roughness of preferentially oriented SZY films is larger than that of randomly oriented SZY films deposited under the same ambient O{sub 2} pressure. As the O{sub 2} pressure increased, the RMS surface roughness of preferentially oriented SZY films increased, reaching 45.7 nm (2.61% of film thickness) at 600 mTorr. This study revealed the ambient O{sub 2} pressure and orientation dependent surface roughness of SZY films grown on Pt-coated MgO substrates, which provides the potential to control the surface microstructure of SZY films for electrochemical applications in film-based hydrogen devices.

  7. Oxygen Reduction Reaction on Pt Overlayers Deposited onto a Gold Film: Ligand, Strain, and Ensemble Effect

    DEFF Research Database (Denmark)

    Deng, Yu-Jia; Tripkovic, Vladimir; Rossmeisl, Jan

    2016-01-01

    We study the oxygen reduction reaction (ORR), the catalytic process occurring at the cathode in fuel cells, on Pt layers prepared by electrodeposition onto an Au substrate. Using a nominal Pt layer by layer deposition method previously proposed, imperfect layers of Pt on Au are obtained. The ORR...

  8. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  9. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    International Nuclear Information System (INIS)

    Liu, Rui; Han, Lihao; Huang, Zhuangqun; Ferrer, Ivonne M.; Smets, Arno H.M.; Zeman, Miro; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe 3 and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films

  10. Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

    International Nuclear Information System (INIS)

    Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

    2001-01-01

    The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr,Ti)O 3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 o C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 o C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C--V characteristics, P--E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x--y alignment and the interface between electrode and PZT in MFM capacitors. copyright 2001 American Institute of Physics

  11. Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

    International Nuclear Information System (INIS)

    Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

    2013-01-01

    FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

  12. Elimination of impurity phase formation in FePt magnetic thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wang, Ying; Medwal, Rohit; Sehdev, Neeru; Yadian, Boluo; Tan, T.L.; Lee, P.; Talebitaher, A.; Ilyas, Usman; Ramanujan, R.V.; Huang, Yizhong; Rawat, R.S.

    2014-01-01

    The formation of impurity phases in FePt thin films severely degrades its magnetic properties. The X-ray diffraction patterns of FePt thin films, synthesized using pulsed laser deposition (PLD), showed peaks corresponding to impurity phases, resulting in softer magnetic properties. A systematic investigation was carried to determine the factors that might have led to impurity phase formation. The factors include (i) PLD target composition, (ii) substrate material, (iii) annealing parameters such as temperature, duration and ambience and (iv) PLD deposition parameters such as chamber ambience, laser energy fluence and target–substrate distance. Depositions on the different substrates revealed impurity phase formation only on Si substrates. It was found that the target composition, PLD chamber ambience, and annealing ambience were not the factors that caused the impurity phase formation. The annealing temperature and duration influenced the impurity phases, but are not the cause of their formation. A decrease in the laser energy fluence and increase of the target–substrate distance resulted in elimination of the impurity phases and enhancement in the magnetic and structural properties of FePt thin films. The energy of the ablated plasma species, controlled by the laser energy fluence and the target–substrate distance, is found to be the main factor responsible for the formation of the impurity phases.

  13. Fabrication and characterization of implantable and flexible nerve cuff electrodes with Pt, Ir and IrOx films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Lee, Soo Hyun; Jung, Jung Hwan; Chae, Youn Mee; Kang, Ji Yoon; Suh, Jun-Kyo Francis

    2010-01-01

    This paper presents the fabrication and characterization of implantable and flexible nerve cuff electrodes for neural interfaces using the conventional BioMEMS technique. In order to fabricate a flexible nerve electrode, polyimide (PI) was chosen as the substrate material. Then, nerve electrodes were thermally re-formed in a cuff shape so as to increase the area in which the charges were transferred to the nerve. Platinum (Pt), iridium (Ir) and iridium oxide (IrO x ) films, which were to serve as conducting materials for the nerve electrodes, were deposited at different working pressures by RF magnetron sputtering. The electrochemical properties of the deposited films were characterized by electrochemical impedance spectroscopy (EIS). The charge delivery capacities of the films were recorded and calculated by cyclic voltammetry (CV). The deposited films of Pt, Ir and IrO x have strong differences in electrochemical properties, which depend on the working pressure of sputter. Each film deposited at 30 mTorr of working pressure shows the highest value of charge delivery capacity (CDC). For the IrO x films, the electrochemical properties were strongly affected by the working pressure as well as the Ar:O 2 gas ratio. The IrO x film deposited with an Ar:O 2 gas ratio of 8:1 showed the highest CDC of 59.5 mC cm −2 , which was about five times higher than that of films deposited with a 1:1 gas ratio.

  14. Tuning the Composition and Nanostructure of Pt/Ir Films via Anodized Aluminum Oxide Templated Atomic Layer Deposition

    Science.gov (United States)

    2010-01-01

    12 ] to dictate fi lm morphology. Such templated deposition is typically con- ducted by either electrodeposition or elec- troless deposition, with...non-enzymatic glucose sensing. [ 34–36 ] In particular, the syn- thesis of such nanostructured fi lms is delineated with a focus on the precise...deposited using alternating exposures to trimethylaluminum and H 2 O to provide a uniform nucleation layer for Pt and Ir fi lms. Nanostructured Pt fi

  15. Measurement of Young’s modulus and residual stress of atomic layer deposited Al2O3 and Pt thin films

    Science.gov (United States)

    Purkl, Fabian; Daus, Alwin; English, Timothy S.; Provine, J.; Feyh, Ando; Urban, Gerald; Kenny, Thomas W.

    2017-08-01

    The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8-27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young’s modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young’s modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

  16. Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

    International Nuclear Information System (INIS)

    Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

    2010-01-01

    In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

  17. Spectroscopic ellipsometry study of FePt nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.J.; Lo, C.C.H. [Ames Laboratory, Iowa State University, Ames, IA 50011 (United States); Yu, A.C.C. [Sony Corporation, Sendai Technology Center, 3-4-1 Sakuragi, Miyagi 985-0842 (Japan); Fan, M. [School of Materials Science and Technology, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2006-12-15

    The optical properties of a FePt nanoparticle film were investigated using spectroscopic ellipsometry. The FePt nanoparticle film of thickness about 15 nm was prepared by deposition of FePt nanoparticles directly on a Si substrate. The nanoparticle film was annealed at 600 C in vacuum for two hours before the measurements. The optical properties of the FePt nanoparticle film showed distinctively different spectra from those obtained from the bulk and thin film FePt samples, in particular in the low photon energy range (below 3.5 eV) where the nanoparticle film exhibited a relatively flat refractive index and a substantially lower extinction coefficient than the bulk and epitaxial thin film samples. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Optimal series-parallel connection method of dye-sensitized solar cell for Pt thin film deposition using a radio frequency sputter system

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jin-Young; Hong, Ji-Tae; Seo, Hyunwoong; Kim, Mijeong; Son, Min-Kyu; Lee, Kyoung-Jun [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Lee, Dong-Yoon [Advanced Materials and Application research Laboratory, Korea Electrotechnology Research Institute, 28-1, Seongju-dong, Changwon-city, Kyongnam, 641-120 (Korea, Republic of); Kim, Hee-Je [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)], E-mail: heeje@pusan.ac.kr

    2008-11-28

    The counter electrode widely used in DSC (Dye-sensitized solar cells) is constructed of a conducting glass substrate coated with a Pt film, in which the platinum acts as a catalyst. The characteristics of the platinum electrode depend strongly on the fabrication process and the electrode's surface condition. In this study, Pt counter electrodes were deposited by radio frequency (RF) sputtering with 6.7 x 10{sup -1} Pa Ar, RF power of 120 W and substrate temperature of 100 deg. C . The surface morphology of Pt electrodes was investigated using field emission scanning electron microscopy and atomic force microscopy. Comparison of samples prepared by RF sputtering and RF magnetron sputtering showed that the surface of the RF sputter deposited electrode had a larger surface area resulting in more effective catalytic characteristics. Finally, an open voltage of 4.8 V, a short circuit current of 569 mA and a photoelectric conversion efficiency of approximately 3.6% were achieved for cells composed of 30 DSC units of 6 cm x 4 cm DSC units with 6 cells in series and 5 cells in parallel.

  19. Ordering process of sputtered FePt films

    International Nuclear Information System (INIS)

    Takahashi, Y.K.; Ohnuma, M.; Hono, K.

    2003-01-01

    We have investigated the in situ ordering process of sputtered FePt thin films deposited on heated substrates at 300 deg. C with different thicknesses. The films thinner than 50 nm were composed of nanograins (∼5 nm) of disordered FePt phase. Recrystallization occurred when films were grown thicker than 100 nm, and transformation twins were observed in recrystallized grains, in which ordering to the L1 0 structure was confirmed

  20. Benchmarking Pt and Pt-lanthanide sputtered thin films for oxygen electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora; Jensen, Kim Degn; Stephens, Ifan E.L.

    2017-01-01

    Platinum-lanthanide alloys are very promising as active and stable catalysts for the oxygen reduction reaction (ORR) in low-temperature fuel cells. We have fabricated Pt and Pt5Gd metallic thin films via (co-)sputtering deposition in an ultra-high vacuum (UHV) chamber. The electrochemical ORR...

  1. Influence of piezoelectric strain on the Raman spectra of BiFeO{sub 3} films deposited on PMN-PT substrates

    Energy Technology Data Exchange (ETDEWEB)

    Himcinschi, Cameliu, E-mail: himcinsc@physik.tu-freiberg.de; Talkenberger, Andreas; Kortus, Jens [TU Bergakademie Freiberg, Institute of Theoretical Physics, 09596 Freiberg (Germany); Guo, Er-Jia [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany); Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Dörr, Kathrin [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany)

    2016-01-25

    BiFeO{sub 3} epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.28PbTiO{sub 3} (PMN-PT) substrates with a conductive buffer layer (La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or SrRuO{sub 3}) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO{sub 3}, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.

  2. Pulsed laser deposition of Pb(Zr0.52Ti0.48)O3 thin film on cobalt ferrite nano-seed layered Pt(111)/Si substrate: effect of oxygen pressure

    Science.gov (United States)

    Khodaei, M.; Seyyed Ebrahimi, S. A.; Park, Yong Jun; Song, Seungwoo; Jang, Hyun Myung; Son, Junwoo; Baik, Sunggi

    2014-07-01

    The effect of oxygen pressure during pulsed laser deposition of Pb(Zr0.52Ti0.48)O3 (PZT) thin films on CoFe2O4 nano-seed layered Pt(111)/Si substrate was investigated. The PZT film deposited at oxygen pressure lower than 25 mTorr is identified as both perovskite and pyrochlore phases and the films deposited at high oxygen pressure (50-100 mTorr) show the single-phase perovskite PZT that has a perfect (111)-orientation. In addition, the film deposited at PO2 of 50 mTorr has a uniform surface morphology, whereas the film deposited at PO2 of 100 mTorr has a non-uniform surface morphology and more incompacted columnar cross-section microstructure. The polarization of film deposited at 100 mTorr is higher than that deposited at 50 mTorr, but shift of the hysteresis loop along the electrical field axis in the film deposited at PO2 of 100 mTorr is larger than that of the film deposited at PO2 of 50 mTorr.

  3. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  4. L1{sub 0}-FePt films fabricated by wet-chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Xiaoliang; Xiao, Wen; Bao, Nina; Li, Weimin; Chichvarina, Olga, E-mail: A0077107@nus.edu.sg; Ding, Jun, E-mail: msedingj@nus.edu.sg

    2015-08-31

    In this work, we have developed a method to fabricate FePt films by a combination of chemical deposition and post-annealing. Pt-doped Fe films were deposited on Pt(100 nm)/Ti(50 nm)/SiO{sub 2}/Si substrate using thermal deposition and the as-deposited films were subsequently annealed from 300 °C to 800 °C under 5% H{sub 2}/95% N{sub 2}. FePt films were achieved through diffusion and rearrangement of Fe and Pt atoms in post-annealing process. From X-ray diffraction results, the face-centered cubic (fcc) FePt phase appeared at 300 °C and the transformation from fcc to L1{sub 0} phase started at 400 °C. The L1{sub 0}-FePt film possessed an out-of-plane anisotropy and a coercivity of 729 kA/m after annealing at 600 °C. A further increase in annealing temperature led to lower value of coercivity, probably because of grain growth. In addition, the thickness of Pt-doped Fe films could be controlled from 150 nm to 700 nm by adjusting the amount of surfactant used. Our superconducting quantum interference device analysis showed that Pt dopant could significantly improve the chemical stability of Fe films in air. - Highlights: • We fabricated FePt film by a combination of chemical deposition and post-annealing. • L1{sub 0} FePt film was formed by Fe/Pt diffusion in annealing of Pt-doped Fe film. • L1{sub 0}-phase FePt with high coercivity and small out-of-plane anisotropy • Relatively small amount of Pt dopant can enhance chemical stability greatly. • We studied structure and magnetic property of as-deposited and annealed FePt film.

  5. Preparation and Thermoelectric Characteristics of ITO/PtRh:PtRh Thin Film Thermocouple.

    Science.gov (United States)

    Zhao, Xiaohui; Wang, Hongmin; Zhao, Zixiang; Zhang, Wanli; Jiang, Hongchuan

    2017-12-15

    Thin film thermocouples (TFTCs) can provide more precise in situ temperature measurement for aerospace propulsion systems without disturbance of gas flow and surface temperature distribution of the hot components. ITO/PtRh:PtRh TFTC with multilayer structure was deposited on alumina ceramic substrate by magnetron sputtering. After annealing, the TFTC was statically calibrated for multiple cycles with temperature up to 1000 °C. The TFTC with excellent stability and repeatability was realized for the negligible variation of EMF in different calibration cycles. It is believed that owing to oxygen diffusion barriers by the oxidation of top PtRh layer and Schottky barriers formed at the grain boundaries of ITO, the variation of the carrier concentration of ITO film is minimized. Meanwhile, the life time of TFTC is more than 30 h in harsh environment. This makes ITO/PtRh:PtRh TFTC a promising candidate for precise surface temperature measurement of hot components of aeroengines.

  6. Atomic layer deposition synthesis and evaluation of core–shell Pt-WC electrocatalysts

    International Nuclear Information System (INIS)

    Hsu, Irene J.; Chen, Jingguang G.; Jiang, Xiaoqiang; Willis, Brian G.

    2015-01-01

    Pt-WC core shell particles were produced using atomic layer deposition (ALD) to deposit Pt layers onto WC particle substrates. A range of Pt depositions were used to determine the growth mechanism for the Pt-WC powder system. TEM imaging and Cu stripping voltammetry found that Pt ALD growth on WC powder substrates was similar to that on WC thin films. However, excess free carbon was found to affect Pt ALD by blocking adsorption sites on WC. The Pt-WC samples were evaluated for the oxygen reduction reaction using a rotating disk electrode to obtain quantitative activity information. The mass and specific activities for the 30 and 50 ALD cycle samples were found to be comparable to a 10 wt. % Pt/C catalyst. However, higher overpotentials and lower limiting currents were observed with ALD Pt-WC compared to Pt/C catalysts, indicating that the oxygen reduction mechanism is not as efficient on Pt-WC as on bulk Pt. Additionally, these Pt-WC catalysts were used to demonstrate hydrogen evolution reaction activity and were found to perform as well as bulk Pt catalyst but with a fraction of the Pt loading, in agreement with the previous work on Pt-WC thin film catalysts

  7. Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Kuwabara, Hiroki; Sumi, Akihiro; Okamoto, Shoji; Hoko, Hiromasa; Cross, Jeffrey S.; Funakubo, Hiroshi

    2009-04-01

    Pb(Zr0.35Ti0.65)O3 (PZT) films 170 nm thick were prepared at 415 °C by pulsed metal-organic chemical vapor deposition. The (111)-oriented PZT films with local epitaxial growth were obtained on (111)SrRuO3/(111)Pt/TiO2/SiO2/Si substrates and their ferroelectricities were ascertained. Ferroelectricity was improved by postannealing under O2 gas flow up to 550 °C. Larger remanent polarization and better fatigue endurance were obtained using a SrRuO3 top electrode compared to a Pt top electrode for PZT films after annealing at 500 °C.

  8. Electrocatalytic oxidation of methanol on (Pb) lead modified by Pt, Pt-Ru and Pt-Sn microparticles dispersed into poly(o-phenylenediamine) film

    Energy Technology Data Exchange (ETDEWEB)

    Golikand, Ahmad Nozad; Maragheh, Mohammad Ghannadi; Irannejad, Leila [Jaber Ibn Hayan Research Lab., Atomic Energy Organization of Iran (AEOI), Tehran (Iran); Golabi, Seyed Mehdi [Electroanalytical Chemistry Lab., Faculty of Chemistry, University of Tabriz, Tabriz (Iran)

    2005-08-18

    The electrocatalytic oxidation of methanol at a (Pb) lead electrode modified by Pt, Pt-Ru and Pt-Sn microparticles dispersed into poly(o-phenylenediamine) (PoPD) film has been investigated using cyclic voltammetry as analytical technique and 0.5M sulfuric acid as supporting electrolyte. It has been shown that the presence of PoPD film increases considerably the efficiency of deposited Pt and Pt alloys microparticles toward the electrocatalytic oxidation of methanol. The catalytic activity of Pt particles is further enhanced when Ru and especially Sn, is co-deposited in the polymer film. The effects of various parameters such as concentration of methanol, medium temperature as well as the long term stability of modified electrodes have also been investigated. (author)

  9. Effect of Pt coverage in Pt-deposited Pd nanostructure electrodes on electrochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ah-Reum; Lee, Young-Woo; Kwak, Da-Hee; Park, Kyung-Won [Soongsil University, Seoul (Korea, Republic of)

    2015-06-15

    We have fabricated Pt-deposited Pd electrodes via a two-gun sputtering deposition system by separately operating Pd and Pt target as a function of sputtering time of Pt target. For Pt-deposited Pd electrodes (Pd/Pt-X), Pd were first deposited on the substrates at 20 W for 5min, followed by depositing Pt on the Pd-only electrodes as a function of sputtering time (X=1, 3, 5, 7, and 10min) at 20W on the Pt target. As the sputtering time of Pt target increased, the portion of Pt on the Pd electrodes increased, representing an increased coverage of Pt on the Pd electrodes. The Pd/Pt-7 electrode having an optimized Pt coverage exhibits an excellent electrocatalytic activity for methanol oxidation reaction.

  10. PLD prepared nanostructured Pt-CeO{sub 2} thin films containing ionic platinum

    Energy Technology Data Exchange (ETDEWEB)

    Vorokhta, M., E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Khalakhan, I.; Matolínová, I.; Nováková, J.; Haviar, S. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Lančok, J.; Novotný, M. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague, Czhech Republic (Czech Republic); Yoshikawa, H. [National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Matolín, V. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic)

    2017-02-28

    Highlights: • Nanostructured Pt-CeO{sub 2} thin catalyst films were grown on plasma etched and non-etched carbon substrates by pulsed laser deposition. • The surface composition of the nanostructured Pt-CeO{sub 2} films was investigated by surface analysis techniques. • The effect of film roughening was separated from the effect of platinum-ceria atomic interactions. - Abstract: The composition of nanostructured Pt-CeO{sub 2} films on graphite substrates prepared by pulsed laser deposition has been investigated by means of hard X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, and atomic force microscopy. The influence of morphology of the graphite substrates was investigated with respect to the relative concentrations of ionic and metallic Pt species in the films. It was found that the degree of Pt{sup 2+} enrichment is directly related to the surface morphology of graphite substrates. In particular, the deposition of Pt-CeO{sub 2} films on rough graphite substrate etched in oxygen plasma yielded nanostructured Pt-CeO{sub 2} catalyst films with high surface area and high Pt{sup 2+}/Pt{sup 0} ratio. The presented results demonstrate that PLD is a suitable method for the preparation of thin Pt-CeO{sub 2} catalyst films for fuel cell applications.

  11. IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Canto, C.E., E-mail: carloscanto2012@yahoo.com.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Rocha, M.F. [ESIME-Z, IPN, U.P. ALM, Gustavo A. Madero, C.P. 07738 México D.F. (Mexico); Alemón, B. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Huegel, J.C. [Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico)

    2016-03-15

    The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

  12. IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

    International Nuclear Information System (INIS)

    Canto, C.E.; Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C.; Rocha, M.F.; Alemón, B.; Flores, M.; Huegel, J.C.

    2016-01-01

    The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

  13. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  14. Very high coercivities of top-layer diffusion Au/FePt thin films

    International Nuclear Information System (INIS)

    Yuan, F.T.; Chen, S.K.; Liao, W.M.; Hsu, C.W.; Hsiao, S.N.; Chang, W.C.

    2006-01-01

    The Au/FePt samples were prepared by depositing a gold cap layer at room temperature onto a fully ordered FePt layer, followed by an annealing at 800 deg. C for the purpose of interlayer diffusion. After the deposition of the gold layer and the high-temperature annealing, the gold atoms do not dissolve into the FePt Ll 0 lattice. Compared with the continuous FePt film, the TEM photos of the bilayer Au(60 nm)/FePt(60 nm) show a granular structure with FePt particles embedded in Au matrix. The coercivity of Au(60 nm)/FePt(60 nm) sample is 23.5 kOe, which is 85% larger than that of the FePt film without Au top layer. The enhancement in coercivity can be attributed to the formation of isolated structure of FePt ordered phase

  15. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  16. Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

    International Nuclear Information System (INIS)

    Ding, Y.F.; Chen, J.S.; Liu, E.; Lim, B.C.; Hu, J.F.; Liu, B.

    2009-01-01

    FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 deg. C . When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 deg. C . The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 deg. C to 350 deg. C ), though the ordering degree and coercivity of the films increased with increased substrate temperature

  17. Film quality in film mammography. Pt. 2

    International Nuclear Information System (INIS)

    Friedrich, M.; Weskamp, P.; Freie Univ. Berlin

    1976-01-01

    During consideration of three film mammographic systems, the concept of signal/noise ratio is developed as a quantitative measure of film quality. The ability to recognise detail related to detail size, film blackening and exposure geometry was studied for various systems, and the quality profiles are discussed. There is a considerable difference in quality between industrial films without screens and film-screen combinations; however, exposure geometry during mammography has a considerable effect which tends to reduce the difference. Consequently, detail sizes of 200 μ to 1,000 μ (including the majority of mammographic micro-calcifications) are shown about equally well. Contrast for the lo-dose system is somewhat less than for adequately exposed industrial film. Over-exposure with the lo-dose system, contrary to industrial film, rapidly leads to unsatisfactory results. On the other hand it is often not possible to obtain an adequate exposure when using industrial film. For these reasons it is often an advantage to examine large breasts and the dense breasts of young women with a film-screen combination which requires approximately one eighth of the dose necessary for industrial film. For small or easily compressable breasts best results are obtained, using an adequate exposure by employing industril film; radiation dose it then acceptable. (orig./ORU) [de

  18. Magnetic properties and microstructure of low ordering temperature L10 FePt thin films

    International Nuclear Information System (INIS)

    Sun, A.C.; Kuo, P.C.; Chen, S.C.; Chou, C.Y.; Huang, H.L.; Hsu, J.H.

    2004-01-01

    Polycrystalline Fe 52 Pt 48 alloy thin films were prepared by dc magnetron sputtering on preheated natural-oxidized silicon wafer substrates. The film thickness was varied from 10 to 100 nm. The as-deposited film was encapsulated in a quartz tube and postannealed in vacuum at various temperatures for 1 h, then furnace cooled. It is found that the ordering temperature from as-deposited soft magnetic fcc FePt phase to hard magnetic fct L1 0 FePt phase could be reduced to about 350 deg. C by preheating substrate and furnace cooling treatment. The magnetic properties measurements indicated that the in-plane coercivity of the films was increased rapidly as annealing temperature is increased from 300 to 400 deg. C, but it decreased when the annealing temperature is higher than 400 deg. C. X-ray diffraction analysis shown that the as-deposited FePt thin film was a disorder fcc FePt phase. The magnetic measurement indicated that the transformation of disorder fcc FePt to fct L1 0 FePt phase was started at about 350 deg. C, which is consistent with the analysis of x-ray diffraction patterns. From scanning electron microscopy observation and selected area energy disperse spectrum analysis, the distributions of Fe and Pt elements in the films became nonuniform when the annealing temperature was higher than 500 deg. C due to the formation of the Fe 3 Pt phase. After annealing at 400 deg. C, the in plane coercivity of Fe 52 Pt 48 thin film with film thickness of 100 nm is 10 kOe, M s is 580 emu/cm3, and grain size is about 12 nm

  19. L1{sub 0} phase transition in FePt thin films via direct interface reaction

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Liu Baoting; Guo Jianxin [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

    2008-12-07

    Lowering the L1{sub 0} ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1{sub 0} ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1{sub 0} ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO{sub 2} substrates. The accelerated L1{sub 0} ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1{sub 0} ordering process of the FePt films.

  20. L10 phase transition in FePt thin films via direct interface reaction

    International Nuclear Information System (INIS)

    Li Xiaohong; Sun Hongyu; Wang Fengqing; Li Wei; Zhang Xiangyi; Liu Baoting; Guo Jianxin

    2008-01-01

    Lowering the L1 0 ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1 0 ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1 0 ordering temperature of T = 310 deg. C as compared with those deposited on Si/SiO 2 substrates. The accelerated L1 0 ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1 0 ordering process of the FePt films.

  1. Laser deposition of HTSC films

    International Nuclear Information System (INIS)

    Sobol', Eh.N.; Bagratashvili, V.N.; Zherikhin, A.N.; Sviridov, A.P.

    1990-01-01

    Studies of the high-temperature superconducting (HTSC) films fabrication by the laser deposition are reviewed. Physical and chemical processes taking place during laser deposition are considered, such as the target evaporation, the material transport from the target to the substrate, the film growth on the substrate, thermochemical reactions and mass transfer within the HTSC films and their stability. The experimental results on the laser deposition of different HTSC ceramics and their properties investigations are given. The major technological issues are discussed including the deposition schemes, the oxygen supply, the target compositions and structure, the substrates and interface layers selection, the deposition regimes and their impact on the HTSC films properties. 169 refs.; 6 figs.; 2 tabs

  2. Magnetic Properties and Microstructure of FeOx/Fe/FePt and FeOx/FePt Films

    Directory of Open Access Journals (Sweden)

    Jai-Lin Tsai

    2013-01-01

    Full Text Available The Fe(6 nm/FePt film with perpendicular magnetization was deposited on the glass substrate. To study the oxygen diffusion effect on the coupling of Fe/FePt bilayer, the plasma oxidation with 0.5~7% oxygen flow ratio was performed during sputtered part of Fe layer and formed the FeOx(3 nm/Fe(3 nm/FePt trilayer. Two-step magnetic hysteresis loops were found in trilayer with oxygen flow ratio above 1%. The magnetization in FeOx and Fe/FePt layers was decoupled. The moments in FeOx layer were first reversed and followed by coupled Fe/FePt bilayer. The trilayer was annealed again at 500°C and 800°C for 3 minutes. When the FeOx(3 nm/Fe(3 nm/FePt trilayer was annealed at 500°C, the layers structure was changed to FeOx(6 nm/FePt bilayer due to oxygen diffusion. The hard-magnetic FeOx(6 nm/FePt film was coupled with single switching field. The FeOx/(disordered FePt layer structure was observed with further annealing at 800°C and presented soft-magnetic loop. In summary, the coupling between soft-magnetic Fe, FeOx layer, and hard-magnetic L10 FePt layer can be controlled by the oxygen diffusion behavior, and the oxidation of Fe layer was tuned by the annealing temperature. The ordered L10 FePt layer was deteriorated by oxygen and became disordered FePt when the annealed temperature was up to 800°C.

  3. Effects of the top-electrode preparation method on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

    International Nuclear Information System (INIS)

    Lee, Eun Gu; Lee, Jae Gab; Kim, Sun Jae

    2006-01-01

    The deformation in the hysteresis loop of Pt/PZT/Pt thin-film capacitors due to deposition and patterning of the top electrode has been investigated. The PZT film was aged during the deposition of the top electrode and was positively poled during reactive ion etching (RIE). The PZT film having sputtered top electrode was very sensitive to the RIE process. The film with a thinner top electrode showed less initial switching polarization due to less compressive stress, but better fatigue characteristics due to an enhanced partial-switching region.

  4. Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

    Science.gov (United States)

    Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

    1993-04-01

    A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

  5. Photoelectrocatalytic Degradation of Organic Pollutants in Aqueous Solution Using a Pt-TiO2 Film

    Directory of Open Access Journals (Sweden)

    Chun He

    2009-01-01

    Full Text Available A series of Pt-TiO2 films with nanocrystaline structure was prepared by a procedure of photodeposition and subsequent dip-coating. The Pt-TiO2 films were characterized by X-ray diffraction, scanning electronic microscope, electrochemical characterization to examine the surface structure, chemical composition, and the photoelectrochemical properties. The photocatalytic activity of the Pt-TiO2 films was evaluated in the photocatalytic (PC and photoelectrocatalytic (PEC degradation of formic acid in aqueous solution. Compared with a TiO2 film, the efficiency of formic acid degradation using the Pt-TiO2 films was significantly higher in both the PC and PEC processes. The enhancement is attributed to the action of Pt deposits on the TiO2 surface, which play a key role by attracting conduction band photoelectrons. In the PEC process, the anodic bias externally applied on the illuminated Pt-TiO2 films can further drive away the accumulated photoelectrons from the metal deposits and promote a process of interfacial charge transfer.

  6. Organic Photovoltaic Devices Based on Oriented n-Type Molecular Films Deposited on Oriented Polythiophene Films.

    Science.gov (United States)

    Mizokuro, Toshiko; Tanigaki, Nobutaka; Miyadera, Tetsuhiko; Shibata, Yousei; Koganezawa, Tomoyuki

    2018-04-01

    The molecular orientation of π-conjugated molecules has been reported to significantly affect the performance of organic photovoltaic devices (OPVs) based on molecular films. Hence, the control of molecular orientation is a key issue toward the improvement of OPV performance. In this research, oriented thin films of an n-type molecule, 3,4,9,10-Perylenetetracarboxylic Bisbenzimida-zole (PTCBI), were formed by deposition on in-plane oriented polythiophene (PT) films. Orientation of the PTCBI films was evaluated by polarized UV-vis spectroscopy and 2D-Grazing incidence X-ray diffraction. Results indicated that PTCBI molecules on PT film exhibit nearly edge-on and in-plane orientation (with molecular long axis along the substrate), whereas PTCBI molecules without PT film exhibit neither. OPVs composed of PTCBI molecular film with and without PT were fabricated and evaluated for correlation of orientation with performance. The OPVs composed of PTCBI film with PT showed higher power conversion efficiency (PCE) than that of film without PT. The experiment indicated that in-plane orientation of PTCBI molecules absorbs incident light more efficiently, leading to increase in PCE.

  7. On the Relationship of Magnetocrystalline Anisotropy and Stoichiometry in Epitaxial L1{sub 0} CoPt(001) and FePt(001) Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Barmak, K

    2004-08-10

    Two series of epitaxial CoPt and FePt films, with nominal thicknesses of 42 or 50 nm, were prepared by sputtering onto single crystal MgO(001) substrates in order to investigate the chemical ordering and the resultant magnetic properties as a function of alloy composition. In the first series, the film composition was kept constant, while the substrate temperature was increased from 144 to 704 C. In the second series the substrate temperature was kept constant at 704 C for CoPt and 620 C for FePt, while the alloy stoichiometry was varied in the nominalrange of 40-60 at% Co(Fe). Film compositions and thicknesses were measured via Rutherford backscattering spectrometry. The lattice and long-range order parameter for the L1{sub 0} phase were obtained for both sets of films using x-ray diffraction. The room-temperature magnetocrystalline anisotropy constants were determined for a subset of the films using torque magnetometry. The order parameter was found to increase with increasing temperature, with ordering occurring more readily in FePt when compared with CoPt. A perpendicular anisotropy developed in CoPt for substrate temperatures above 534 C and in FePt above 321 C. The structure and width of the magnetic domains in CoPt and FePt, as seen by magnetic force microscopy, also demonstrated an increase in magnetic anisotropy with increasing temperature. For the films deposited at the highest temperatures (704 C for CoPt and 620 C for FePt), the order parameter reached a maximum near the equiatomic composition, whereas the magnetocrystalline anisotropy increased as the concentration of Co or Fe was increased from below to slightly above the equiatomic composition. It is concluded that non-stoichiometric L1{sub 0} CoPt and FePt, with a slight excess of Co or Fe, are preferable for applications requiring the highest anisotropies.

  8. Optical properties of monodispersive FePt nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.J.; Lo, C.C.H. [Ames Laboratory, Iowa State University, Ames, IA 50011 (United States); Yu, A.C.C. [Sony Corporation, Sendai Technology Center, 3-4-1 Sakuragi, Miyagi 985-0842 (Japan); Fan, M. [Center for Sustainable Environmental Technologies, Iowa State University, Ames, IA 50011 (United States)

    2004-10-01

    The optical properties of monodispersive FePt nanoparticle films were investigated using spectroscopic ellipsometry in the energy range of 1.5 to 5.5 eV. The monodispersive FePt nanoparticle film was stabilized on a Si substrate by means of an organosilane coupling film, resulting in the formation of a (Si/SiO{sub 2}/APTS/FePt nanoparticles monolayer) structure. Multilayer optical models were employed to study the contribution of the FePt nanoparticles to the measured optical properties of the monodispersive FePt nanoparticle film, and to estimate the optical properties of the FePt nanoparticle layer. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Laser-assisted preparation and photoelectric properties of grating-structured Pt/FTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Nai-fei, E-mail: rnf_ujs@126.com [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing, E-mail: lij_huang@126.com [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Bao-jia [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-09-30

    Highlights: • Pt layers were deposited by DC magnetron sputtering on commercial FTO glasses. • Pt/FTO films were irradiated by laser for inducing gratings and annealing. • An ideal grating-structured Pt/FTO film was obtained using a fluence of 1.05 J/cm{sup 2}. • The grating-structured Pt/FTO film exhibited excellent photoelectric properties. • Laser-assisted treatment is effective for improving performance of FTO-based films. - Abstract: In order to improve the transparency and conductivity of commercial fluorine-doped tin oxide (FTO) glass, platinum (Pt) layers were deposited on the FTO film by direct current (DC) magnetron sputtering, followed by being irradiating with a 532 nm nanosecond pulsed laser for the dual purpose of inducing grating structures and annealing. Introducing a Pt layer decreased the average transmittance (400–800 nm) and the sheet resistance of the initial FTO film from 80.2% and 8.4 Ω/sq to 68.6% and 7.9 Ω/sq, respectively. The ideal grating-structured Pt/FTO film was obtained by laser irradiation with a fluence of 1.05 J/cm{sup 2}, and X-ray diffraction (XRD) analysis confirmed that this film underwent optimal annealing. As a result, it exhibited an average transmittance (400–800 nm) of 84.1% and a sheet resistance of 6.8 Ω/sq. These results indicated that laser-assisted treatment combined with introduction of metal layer can effectively improve photoelectric properties of FTO single-layer films.

  10. Pt Catalyst Supported within TiO2 Mesoporous Films for Oxygen Reduction Reaction

    International Nuclear Information System (INIS)

    Huang, Dekang; Zhang, Bingyan; Bai, Jie; Zhang, Yibo; Wittstock, Gunther; Wang, Mingkui; Shen, Yan

    2014-01-01

    In this study, dispersed Pt nanoparticles into mesoporous TiO 2 thin films are fabricated by a facile electrochemical deposition method as electro-catalysts for oxygen reduction reaction. The mesoporous TiO 2 thin films coated on the fluorine-doped tin oxide glass by screen printing allow a facile transport of reactants and products. The structural properties of the resulted Pt/TiO 2 electrode are evaluated by field emission scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy. Cyclic voltammetry measurements are performed to study the electrochemical properties of the Pt/TiO 2 electrode. Further study demonstrates the stability of the Pt catalyst supported within TiO 2 mesoporous films for the oxygen reduction reaction

  11. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  12. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  13. Double switching hysteresis loop in a single layer Fe3Pt alloy thin films

    International Nuclear Information System (INIS)

    Nahid, M.A.I.; Suzuki, Takao

    2008-01-01

    The Fe 3 Pt alloy thin films were epitaxially grown on MgO(100) substrate by e-beam evaporation. The films were partially ordered at the substrate deposition temperature above 350 deg. C. These partially ordered films exhibit very large biaxial magnetic anisotropy constant in the order of 10 5 J/m 3 and produce double switching in the hysteresis loops. The difference of the switching field of these films can be up to about 3 x 10 5 A/m by tuning the angle of the applied field with respect to the easy axes. This double switching behavior stems from the large biaxial magnetic anisotropy of the films

  14. Characterization and methanol electrooxidation studies of Pt(111)/Os surfaces prepared by spontaneous deposition.

    Science.gov (United States)

    Johnston, Christina M; Strbac, Svetlana; Lewera, Adam; Sibert, Eric; Wieckowski, Andrzej

    2006-09-12

    Catalytic activity of the Pt(111)/Os surface toward methanol electrooxidation was optimized by exploring a wide range of Os coverage. Various methods of surface analyses were used, including electroanalytical, STM, and XPS methods. The Pt(111) surface was decorated with nanosized Os islands by spontaneous deposition, and the Os coverage was controlled by changing the exposure time to the Os-containing electrolyte. The structure of Os deposits on Pt(111) was characterized and quantified by in situ STM and stripping voltammetry. We found that the optimal Os surface coverage of Pt(111) for methanol electrooxidation was 0.7 +/- 0.1 ML, close to 1.0 +/- 0.1 Os packing density. Apparently, the high osmium coverage Pt(111)/Os surface provides more of the necessary oxygen-containing species (e.g., Os-OH) for effective methanol electrooxidation than the Pt(111)/Os surfaces with lower Os coverage (vs e.g., Ru-OH). Supporting evidence for this conjecture comes from the CO electrooxidation data, which show that the onset potential for CO stripping is lowered from 0.53 to 0.45 V when the Os coverage is increased from 0.2 to 0.7 ML. However, the activity of Pt(111)/Os for methanol electrooxidation decreases when the Os coverage is higher than 0.7 +/- 0.1 ML, indicating that Pt sites uncovered by Os are necessary for sustaining significant methanol oxidation rates. Furthermore, osmium is inactive for methanol electrooxidation when the platinum substrate is absent: Os deposits on Au(111), a bulk Os ingot, and thick films of electrodeposited Os on Pt(111), all compare poorly to Pt(111)/Os. We conclude that a bifunctional mechanism applies to the methanol electrooxidation similarly to Pt(111)/Ru, although with fewer available Pt sites. Finally, the potential window for methanol electrooxidation on Pt(111)/Os was observed to shift positively versus Pt(111)/Ru. Because of the difference in the Os and Ru oxophilicity under electrochemical conditions, the Os deposit provides fewer

  15. Deposition of antimony telluride thin film by ECALE

    Institute of Scientific and Technical Information of China (English)

    GAO; Xianhui; YANG; Junyou; ZHU; Wen; HOU; Jie; BAO; Siqian; FAN; Xi'an; DUAN; Xingkai

    2006-01-01

    The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

  16. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    International Nuclear Information System (INIS)

    Lan, Yung-Hsiang; Brahma, Sanjaya; Tzeng, Y.H.; Ting, Jyh-Ming

    2014-01-01

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

  17. Effect of Hf underlayer on structure and magnetic properties of rapid thermal annealed FePt thin films

    International Nuclear Information System (INIS)

    Shen, C.Y.; Yuan, F.T.; Chang, H.W.; Lin, M.C.; Su, C.C.; Chang, S.T.; Wang, C.R.; Mei, J.K.; Hsiao, S.N.; Chen, C.C.; Shih, C.W.; Chang, W.C.

    2014-01-01

    FePt(20 nm) and FePt(20 nm)/Hf(10 nm) thin films prepared on the glass substrates by sputtering and post annealing are studied. For both samples, the as deposited films are disordered and L1 0 -ordering is triggered by a 400 °C-annealing. At T a ≥600 °C, Hf–Pt intermetallic compound forms with increasing T a , which consumes Pt in FePt layer and results in the formation of Fe 3 Pt phase. The film becomes soft magnetic at T a =800 °C. The optimized condition of FePt/Hf film is in the T a range of 500 to 600 °C where the interdiffusion between Hf and FePt layer is not extensive. The value of H c is 8.9 kOe and M r is 650–670 emu/cm 3 . Unlike FePt films, the Hf-undelayered samples show significantly reduced out-of-plane remanent and coercivity. The values for both are around 50% smaller than that of the FePt films. Additionally, Hf underlayer markedly reduces the FePt grain size and narrows the distribution, which enhances magnetic intergrain coupling. Good in-plane magnetic properties are preferred for the uses like a hard biasing magnet in a spintronic device. - Highlights: • Effect of Hf underlayer on structure and magnetic properties of FePt films are studied. • Hf underlayer reduces size, narrows the distribution of grains and thus enhances intergrain coupling. • Higher T a ≥600 °C makes Hf–Pt intermetallic compound and thus Fe 3 Pt phase form. • Good in-plane magnetic property is proper for uses in hard biasing magnet in spintronic devices

  18. Measurement of benzenethiol adsorption to nanostructured Pt, Pd, and PtPd films using Raman spectroelectrochemistry.

    Science.gov (United States)

    Pomfret, Michael B; Pietron, Jeremy J; Owrutsky, Jeffrey C

    2010-05-04

    Raman spectroscopy and electrochemical methods were used to study the behavior of the model adsorbate benzenethiol (BT) on nanostructured Pt, Pd, and PtPd electrodes as a function of applied potential. Benzenethiol adsorbs out of ethanolic solutions as the corresponding thiolate, and voltammetric stripping data reveal that BT is oxidatively removed from all of the nanostructured metals upon repeated oxidative and reductive cycling. Oxidative stripping potentials for BT increase in the order Pt oxidizing potentials via cleavage of the Pt-S bond. In contrast, on nanoscale Pd and PtPd, BT is irreversibly lost due to cleavage of BT C-S bonds at oxidizing potentials, which leaves adsorbed sulfur oxides on Pd and PtPd films and effects the desulfurization of BT. While Pd and PtPd films are less sulfur-resistant than Pt films, palladium oxides, which form at higher potentials than Pt oxides, oxidatively desulfurize BT. In situ spectroelectrochemical Raman spectroscopy provides real-time, chemically specific information that complements the cyclic voltammetric data. The combination of these techniques affords a powerful and convenient method for guiding the development of sulfur-tolerant PEMFC catalysts.

  19. Mechanism of coercivity enhancement by Ag addition in FePt-C granular films for heat assisted magnetic recording media

    Energy Technology Data Exchange (ETDEWEB)

    Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K., E-mail: takahashi.yukiko@nims.go.jp; Wang, J.; Hono, K. [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Ina, T.; Nakamura, T.; Ueno, W.; Nitta, K.; Uruga, T. [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

    2014-06-02

    We investigated the Ag distribution in a FePtAg-C granular film that is under consideration for a heat assisted magnetic recording medium by aberration-corrected scanning transmission electron microscope-energy dispersive X-ray spectroscopy and X-ray absorption fine structure. Ag is rejected from the core of FePt grains during the deposition, forming Ag-enriched shell surrounding L1{sub 0}-ordered FePt grains. Since Ag has no solubility in both Fe and Pt, the rejection of Ag induces atomic diffusions thereby enhancing the kinetics of the L1{sub 0}-order in the FePt grains.

  20. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    Science.gov (United States)

    Pigois-Landureau, E.; Nicolau, Y. F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3-4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces.

  1. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    International Nuclear Information System (INIS)

    Pigois-Landureau, E.; Nicolau, Y.F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3 endash 4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces. copyright 1996 American Institute of Physics

  2. A study on the microstructure of Pt/TaN/Si films by high resolution TEM analysis

    CERN Document Server

    Cho, K N; Oh, J E; Park, C S; Lee, S I; Lee, M Y

    1998-01-01

    The microstructure change of Pt/amorphous TaN/Si films after various heat treatments has been investigated by high resolution transmission electron microscopy (HR-TEM) analysis. TaN thin films are deposited by remote plasma metalorganic chemical vapor deposition (RP-MOCVD) using pentakis-dimethyl-amino-tantalum (PDMATa) and radical sources, hydrogen and ammonia plasma. Deposited TaN thin film shows excellent barrier properties such as good resistance against oxidation after post-heat treatment at high temperature. In the case of hydrogen plasma, however, diffusion of Pt into TaN layer was observed, which was caused by the out-diffusion of carbon through the grain boundaries of Pt. In the case of ammonia plasma, the formation of thin oxide layer at the Pt/TaN interface was observed.

  3. Electrochemical Reduction of CO2 on Compositionally Variant Au-Pt Bimetallic Thin Films

    DEFF Research Database (Denmark)

    Ma, Ming; Hansen, Heine Anton; Valenti, Marco

    2017-01-01

    The electrocatalytic reduction of CO2 on Au-Pt bimetallic catalysts with different compositions was evaluated, offering a platform for uncovering the correlation between the catalytic activity and the surface composition of bimetallic electrocatalysts. The Au-Pt alloy films were synthesized...... by a magnetron sputtering co-deposition technique with tunable composition. It was found that the syngas ratio (CO:H2) on the Au-Pt films is able to be tuned by systematically controlling the binary composition. This tunable catalytic selectivity is attributed to the variation of binding strength of COOH and CO...... intermediates, influenced by the surface electronic structure (d-band center energy) which is linked to the surface composition of the bimetallic films. Notably, a gradual shift of the d-band center away from the Fermi level was observed with increasing Au content, which correspondingly reduces the binding...

  4. All-optical measurement of interlayer exchange coupling in Fe/Pt/FePt thin films

    Science.gov (United States)

    Berk, C.; Ganss, F.; Jaris, M.; Albrecht, M.; Schmidt, H.

    2018-01-01

    Time Resolved Magneto Optic Kerr Effect spectroscopy was used to all-optically study the dynamics in exchange coupled Fe(10 nm)/Pt(x = 0-5 nm)/FePt (10 nm) thin films. As the Pt spacer decreases, the effective magnetization of the layers is seen to evolve towards the strong coupling limit where the two films can be described by a single effective magnetization. The coupling begins at x = 1.5 nm and reaches a maximum exchange coupling constant of 2.89 erg/cm2 at x = 0 nm. The films are ferromagnetically coupled at all Pt thicknesses in the exchange coupled regime (x ≤ 1.5 nm). A procedure for extracting the interlayer exchange constant by measuring the magnetic precession frequencies at multiple applied fields and angles is outlined. The dynamics are well reproduced using micromagnetic simulations.

  5. Orientation and magnetic properties of FePt and CoPt films grown on MgO(1 1 0) single-crystal substrate by electron-beam coevaporation

    Energy Technology Data Exchange (ETDEWEB)

    Yu Minghui [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States)], E-mail: myu1@uno.edu; Ohguchi, H.; Zambano, A.; Takeuchi, I. [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Liu, J.P. [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Josell, D.; Bendersky, L.A. [Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

    2007-09-25

    We have studied the orientation and magnetic properties of FePt and CoPt films deposited by electron-beam co-evaporation on MgO(1 1 0) single-crystal substrates at substrate temperatures from 500 to 700 deg. C. We observed that long-range chemical ordering of the L1{sub 0} structure occurred over the entire range of substrate temperatures in FePt films and at 600 deg. C and up in CoPt films. Growth of FePt and CoPt yielded epitaxial films with cube-on-cube orientation of the pseudo-cubic L1{sub 0} lattice with respect to the cubic MgO. X-ray diffraction patterns and magnetization loops of the FePt and CoPt films revealed the existence of L1{sub 0} domains with the tetragonal c axis inclined at 45 deg. to the film plane, orientations (0 h h) and (h 0 h), as well as L1{sub 0} domains with the tetragonal c axis in the plane of the film, orientation (h h 0). The FePt and CoPt films for which X-ray diffraction indicated tetragonal phase was present all exhibited hard magnetic properties with easy axis along the [0 0 1] substrate direction as well as large in-plane magnetocrystalline anisotropy.

  6. Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni–Mn–Ga thin film on PMN–PT

    International Nuclear Information System (INIS)

    Teferi, M.Y.; Amaral, V.S.; Lounrenco, A.C.; Das, S.; Amaral, J.S.; Karpinsky, D.V.; Soares, N.; Sobolev, N.A.; Kholkin, A.L.; Tavares, P.B.

    2012-01-01

    In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni–Mn–Ga (NMG) alloy and lead magnesium niobate–lead titanate (PMN–PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 °C) deposition of the film on single crystal of piezoelectric PMN–PT substrate using rf magnetron co-sputtering of Ni 50 Mn 50 and Ni 50 Ga 50 targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of ∼240 emu/cm 3 and Curie temperature of ∼337 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (α ME ) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal–Transverse (L–T) ME coupling mode by lock-in technique. A maximum ME coefficient α ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN–PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. - Highlights: ► Multiferroic NMG/PMN–PT heterostructure prepared by depositing NMG alloy thin film on PMN–PT substrate. ► The film is in ferromagnetically ordered martensite state at room temperature. ► The substrate maintains its piezoelectric state after deposition. ► The heterostructure exhibits ME effect with maximum of α ME of 3.02 mV/cm Oe.

  7. CoPt nanoparticles deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Castaldi, L.; Giannakopoulos, K.; Travlos, A.; Niarchos, D.; Boukari, S.; Beaurepaire, E.

    2005-01-01

    Co 50 Pt 50 nanoparticles were co-deposited on thermally oxidized Si substrates by electron beam evaporation at 750 deg C. The mean particle sizes are between ∼5 and ∼20 nm and depend on the nominal thickness of the layer. Different processing conditions resulted in different structural and morphological properties of the samples which led to superparamagnetic and ferromagnetic behaviors. The post-annealing treatment of the CoPt nanograins resulted in the crystallization of the L1 0 ordered phase and in the magnetic hardening of nanoparticles with a maximum coercivity of ∼7.4 kOe

  8. Controlling the alloy composition of PtNi nanocrystals using solid-state dewetting of bilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Okkyun; Oh, Se An; Lee, Ji Yeon; Ha, Sung Soo; Kim, Jae Myung; Choi, Jung Won; Kim, Jin-Woo [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of); Kang, Hyon Chol [Department of Materials and Science Engineering, Chosun University, Gwangju 61542 (Korea, Republic of); Noh, Do Young, E-mail: dynoh@gist.ac.kr [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of)

    2016-05-15

    We demonstrate that solid-state dewetting of bilayer films is an effective way for obtaining bimetallic alloy nanocrystals of controlled composition. When a Pt–Ni bilayer film were annealed near 700 °C, Pt and Ni atoms inter-diffused to form a PtNi bimetallic alloy film. Upon annealing at higher temperatures, the bilayer films transformed into <111> oriented PtNi alloy nanocrystals in small-rhombicuboctahedron shape through solid-state dewetting process. The Pt content of the nanocrystals and the alloy films, estimated by applying the Vegard's law to the relaxed lattice constant, was closely related to the thickness of each layer in the as-grown bilayer films which can be readily controlled during bilayer deposition. - Highlights: • Composition control of PtNi nanoparticles using solid state dewetting is proposed. • PtNi alloy composition was controlled by thickness ratio of Pt–Ni bilayer films. • PtNi alloy nanocrystals were obtained in small-rhombicuboctahedron shape.

  9. Growth, structure and magnetic properties of magnetron sputtered FePt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cantelli, Valentina

    2010-07-01

    The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

  10. ITO thin films deposited by advanced pulsed laser deposition

    International Nuclear Information System (INIS)

    Viespe, Cristian; Nicolae, Ionut; Sima, Cornelia; Grigoriu, Constantin; Medianu, Rares

    2007-01-01

    Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 deg. C), pressure (1-6 x 10 -2 Torr), laser fluence (1-4 J/cm 2 ) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 deg. C on a large area (5 x 5 cm 2 ). The films have electrical resistivity of 8 x 10 -4 Ω cm at RT, 5 x 10 -4 Ω cm at 180 deg. C and an optical transmission in the visible range, around 89%

  11. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  12. Magnetic anisotropy and chemical long-range order in epitaxial ferrimagnetic CrPt sub 3 films

    CERN Document Server

    Maret, M; Köhler, J; Poinsot, R; Ulhaq-Bouillet, C; Tonnerre, J M; Berar, J F; Bucher, E

    2000-01-01

    Thin films of CrPt sub 3 were prepared by molecular beam epitaxy on both Al sub 2 O sub 3 (0 0 0 1) and MgO(0 0 1) substrates, either directly by co-deposition of Cr and Pt at high temperatures or after in situ annealing of superlattices [Cr(2 A)/Pt(7 A)]. In situ RHEED observations and X-ray diffraction measurements have allowed us to check the single-crystal quality of CrPt sub 3 films and to determine the degree of L1 sub 2 -type long-range order (LRO). In films co-deposited between 850 deg. C and 950 deg. C a nearly perfect LRO has been observed. As in bulk alloys, such ordering yields a ferrimagnetic order, while the disordered films are non-magnetic. In contrast with the ferromagnetic L1 sub 2 -type ordered CoPt sub 3 (1 1 1) films, the ferrimagnetic CrPt sub 3 (1 1 1) films exhibit perpendicular magnetic anisotropy with quality factors, K sub u /K sub d , as large as 5 and large coercivities around 450 kA/m. Such anisotropy could be related to the arrangement of Cr atoms, which owing to their large mag...

  13. Multiple oxide content media for columnar grain growth in L10 FePt thin films

    International Nuclear Information System (INIS)

    Ho, Hoan; Yang, En; Laughlin, David E.; Zhu, Jian-Gang

    2013-01-01

    An approach to enhance the height-to-diameter ratio of FePt grains in heat-assisted magnetic recording media is proposed. The FePt-SiO x thin films are deposited with a decrease of the SiO x percentage along the film growth direction. When bi-layer and tri-layer media are sputtered at 410 °C, we observe discontinuities in the FePt grains at interfaces between layers, which lead to poor epitaxial growth. Due to increased atomic diffusion, the bi-layer media sputtered at 450 °C is shown to (1) grow into continuous columnar grains with similar size as single-layer media but much higher aspect ratio, (2) have better L1 0 ordering and larger coercivity.

  14. Energy product enhancement of CoPt films by the alloy addition of Ti

    Energy Technology Data Exchange (ETDEWEB)

    Liao, W.M. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China)]. E-mail: p8993883@knight.fcu.edu; Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Yuan, F.T. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Hsu, C.W. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Hsiao, S.N. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Chang, W.C. [Department of Physics, National Chung Cheng University, Ming-Hsiung, Chia-Yi, Taiwan (China)

    2006-09-15

    Ternary (Co{sub 48}Pt{sub 52}){sub 100-x}Ti{sub x} (x=0, 0.8, 3.7, 5.3) films were deposited on quartz substrates by RF sputtering at the annealing temperatures T{sub a}=500-800deg. C. The addition of Ti was found to suppress the formation of the CoPt-ordered phase. The coercivity squareness parameters (S*) were also increased with the addition of titanium. TEM observations indicated that the Ti addition significantly reduces the grain size of the CoPt film, thus enhances the exchange interaction between the magnetic grains. The advantages result in the increase of (BH){sub max} values from 2.91MGOe for x=0.0 to 6.09 MGOe for x=5.3 after the samples is annealed at an optimum temperature of 700deg. C.

  15. Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

    2016-03-01

    Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

  16. Pt-Al{sub 2}O{sub 3} dual layer atomic layer deposition coating in high aspect ratio nanopores

    Energy Technology Data Exchange (ETDEWEB)

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Goeran; Wijngaart, Wouter van der; Roxhed, Niclas [KTH Royal Institute of Technology, School of Electrical Engineering, Micro and Nanosystems, Osquldas Vaeg 10, SE-10044 Stockholm (Sweden)

    2013-01-11

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al{sub 2}O{sub 3}) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al{sub 2}O{sub 3} layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 {mu}m thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al{sub 2}O{sub 3} using ALD. (paper)

  17. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    Science.gov (United States)

    Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

  18. Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

    Directory of Open Access Journals (Sweden)

    Cui Yan

    2014-01-01

    Full Text Available Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47O3 (PZT thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

  19. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  20. Increased photocatalytic activity induced by TiO2/Pt/SnO2 heterostructured films

    Science.gov (United States)

    Testoni, Glaucio O.; Amoresi, Rafael A. C.; Lustosa, Glauco M. M. M.; Costa, João P. C.; Nogueira, Marcelo V.; Ruiz, Miguel; Zaghete, Maria A.; Perazolli, Leinig A.

    2018-02-01

    In this work, a high photocatalytic activity was attained by intercalating a Pt layer between SnO2 and TiO2 semiconductors, which yielded a TiO2/Pt/SnO2 - type heterostructure used in the discoloration of blue methylene (MB) solution. The porous films and platinum layer were obtained by electrophoretic deposition and DC Sputtering, respectively, and were both characterized morphologically and structurally by FE-SEM and XRD. The films with the Pt interlayer were evaluated by photocatalytic activity through exposure to UV light. An increase in efficiency of 22% was obtained for these films compared to those without platinum deposition. Studies on the reutilization of the films pointed out high efficiency and recovery of the photocatalyst, rendering the methodology favorable for the construction of fixed bed photocatalytic reactors. A proposal associated with the mechanism is discussed in this work in terms of the difference in Schottky barrier between the semiconductors and the electrons transfer and trapping cycle. These are fundamental factors for boosting photocatalytic efficiency.

  1. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  2. Microstructure of thin film platinum electrodes on yttrium stabilized zirconia prepared by sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Toghan, Arafat, E-mail: arafat.toghan@pci.uni-hannover.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany); Khodari, M. [Chemistry Department, Faculty of Science, South Valley University, Qena, 83523 (Egypt); Steinbach, F.; Imbihl, R. [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany)

    2011-09-01

    (111) oriented thin film Pt electrodes were prepared on single crystals of yttrium-stabilized zirconia (YSZ) by sputter deposition of platinum. The electrodes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDX), atomic force microscopy (AFM) and by profilometry. SEM images of the as-sputtered platinum film show a compact amorphous Pt film covering uniformly the substrate. Upon annealing at 1123 K, gaps and pores at the interface develop leading to a partial dewetting of the Pt film. Increasing the annealing temperature to 1373 K transforms the polycrystalline Pt film into single crystalline grains exhibiting a (111) orientation towards the substrate.

  3. Misfit strain phase diagrams of epitaxial PMN–PT films

    Energy Technology Data Exchange (ETDEWEB)

    Khakpash, N.; Khassaf, H.; Rossetti, G. A. [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Alpay, S. P., E-mail: p.alpay@ims.uconn.edu [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Department of Physics, University of Connecticut, Storrs, Connecticut 06269 (United States)

    2015-02-23

    Misfit strain–temperature phase diagrams of three compositions of (001) pseudocubic (1 − x)·Pb (Mg{sub l/3}Nb{sub 2/3})O{sub 3} − x·PbTiO{sub 3} (PMN–PT) thin films are computed using a phenomenological model. Two (x = 0.30, 0.42) are located near the morphotropic phase boundary (MPB) of bulk PMN–PT at room temperature (RT) and one (x = 0.70) is located far from the MPB. The results show that it is possible to stabilize an adaptive monoclinic phase over a wide range of misfit strains. At RT, the stability region of this phase is much larger for PMN–PT compared to barium strontium titanate and lead zirconate titanate films.

  4. Deposition and characterization of CuInSe2 thin films

    International Nuclear Information System (INIS)

    Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

    1988-01-01

    CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

  5. Electrocatalytic activity of atomic layer deposited Pt-Ru catalysts onto N-doped carbon nanotubes

    NARCIS (Netherlands)

    Johansson, A.-C.; Larsen, J.V.; Verheijen, M.A.; Haugshøj, K.B.; Clausen, H.; Kessels, W.M.M.; Christensen, L.H.; Thomsen, E.V.

    2014-01-01

    Pt-Ru catalysts of various compositions, between 0 and 100 at.% of Ru, were deposited onto N-doped multi-walled carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) at 250 C. The Pt and Ru precursors were trimethyl(methylcyclopentadienyl)platinum (MeCpPtMe3) and

  6. Formation of Surface and Quantum-Well States in Ultra Thin Pt Films on the Au(111 Surface

    Directory of Open Access Journals (Sweden)

    Igor V. Silkin

    2017-12-01

    Full Text Available The electronic structure of the Pt/Au(111 heterostructures with a number of Pt monolayers n ranging from one to three is studied in the density-functional-theory framework. The calculations demonstrate that the deposition of the Pt atomic thin films on gold substrate results in strong modifications of the electronic structure at the surface. In particular, the Au(111 s-p-type Shockley surface state becomes completely unoccupied at deposition of any number of Pt monolayers. The Pt adlayer generates numerous quantum-well states in various energy gaps of Au(111 with strong spatial confinement at the surface. As a result, strong enhancement in the local density of state at the surface Pt atomic layer in comparison with clean Pt surface is obtained. The excess in the density of states has maximal magnitude in the case of one monolayer Pt adlayer and gradually reduces with increasing number of Pt atomic layers. The spin–orbit coupling produces strong modification of the energy dispersion of the electronic states generated by the Pt adlayer and gives rise to certain quantum states with a characteristic Dirac-cone shape.

  7. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  8. Improvement in fatigue property for a PZT ferroelectric film device with SRO electrode film prepared by chemical solution deposition

    International Nuclear Information System (INIS)

    Miyazaki, H.; Miwa, Y.; Suzuki, H.

    2007-01-01

    PZT films with (1 0 0) and (1 1 0) orientation were prepared by spin coating using the chemical solution deposition (CSD) method on an SRO/Si or a Pt/Ti/SiO 2 /Si substrate. The remnant polarization and the saturation polarization of the PZT/SRO/Si film were 21 and 35 μC/cm 2 , and those of the PZT/Pt/Ti/SiO 2 /Si film were 20 and 31 μC/cm 2 . The remnant polarization of the PZT/SRO/Si film maintained more than 10 8 switching cycles, and the fatigue property was observed for the PZT film fabricated on the Pt/Ti/SiO 2 /Si electrode

  9. Controllable pt nanoparticle deposition on carbon nanotubes as an anode catalyst for direct methanol fuel cells.

    Science.gov (United States)

    Mu, Yongyan; Liang, Hanpu; Hu, Jinsong; Jiang, Li; Wan, Lijun

    2005-12-01

    We report a novel process to prepare well-dispersed Pt nanoparticles on CNTs. Pt nanoparticles, which were modified by the organic molecule triphenylphosphine, were deposited on multiwalled carbon nanotubes by the organic molecule, which acts as a cross linker. By manipulating the relative ratio of Pt nanoparticles and multiwalled carbon nanotubes in solution, Pt/CNT composites with different Pt content were achieved. The so-prepared Pt/CNT composite materials show higher electrocatalytic activity and better tolerance to poisoning species in methanol oxidation than the commercial E-TEK catalyst, which can be ascribed to the high dispersion of Pt nanoparticles on the multiwalled carbon nanotube surface.

  10. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  11. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  12. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  13. Magnetic viscosity study in FePt/C granular films

    International Nuclear Information System (INIS)

    Huang, Y.; Butler, W.; Zhang, Y.; Hadjipanayis, G.C.; Weller, D.

    2004-01-01

    The magnetic viscosity of FePt/C granular thin films was studied in the temperature range from 2 to 300 K in order to examine the thermal stability of the nanoparticles. The magnetic viscosity coefficient (S max ) was found to decrease with temperature because of decreased thermal activation. At low temperatures, S max showed an almost linear dependence on temperature. However, S max does not extrapolate to zero but seems to have a finite value at cryogenic temperatures

  14. Depth dependent local structures in CoPt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Souza-Neto, N M [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States); Ramos, A Y; Tolentino, H C N; Joly, Y, E-mail: aline.ramos@grenoble.cnrs.f [Institut Neel, CNRS et Univ. Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2009-11-15

    X-ray absorption spectroscopy (XAS) has been used to clarify the thickness-dependent magnetic properties in nanometric CoPt films. We get benefit from the variation of the sampling depth with the grazing angle to investigate the variations of the local order within the film. In order to properly reconstruct the 3D information the experiments were performed either in the in-plane as in the out-of-plane geometries and supported by ab initio calculations. A depth dependence in the chemical order is revealed and the magnetic behavior is interpreted within this framework.

  15. Early-stage ordering in in-situ annealed Fe51Pt49 films

    International Nuclear Information System (INIS)

    Hsiao, S.N.; Chen, S.K.; Chin, T.S.; Hsu, Y.W.; Huang, H.W.; Yuan, F.T.; Lee, H.Y.; Liao, W.M.

    2009-01-01

    We evidenced an early-stage ordering (ESO) in Fe 51 Pt 49 film before the appearance of superlattice diffraction (long-range-order, LRO) using 40-nm-thick films prepared by magnetron sputtering onto quartz substrate. The appearance of L1 0 phase for samples deposited at substrate temperatures (T s ) 400 deg. C and higher was verified by X-ray diffraction. Surface roughness of Fe 51 Pt 49 films, obtained via X-ray specular reflectivity with computational fitting, increases from 3.8 to 11 A as T s is increased from 25 to 275 deg. C. As further increase of T s to 375 deg. C, the roughness drops to 3.2 A and then increases again to 38 A with T s up to 700 deg. C. Measurement on residual strain demonstrates that it is initially compressive at T s s up to 700 deg. C corresponding to LRO transformation. Local atomic rearrangement is observed for samples deposited at T s >250 deg. C by using extended X-ray absorption fine structure. Coercivity of films increases from 10 to 460 Oe as T s increase from 25 to 375 deg. C (ESO) and then from 460 to 10,700 Oe with T s 375-700 deg. C (normal LRO). The worked out quantitative estimation of ESO engages with that of LRO before T s 400 deg. C.

  16. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  17. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  18. Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

    International Nuclear Information System (INIS)

    Yakovlev, S.; Zekonyte, J.; Solterbeck, C.-H.; Es-Souni, M.

    2005-01-01

    Polycrystalline BiFeO 3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO 2 /Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms

  19. Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

    2003-01-01

    ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

  20. Exchange-coupled hard magnetic Fe-Co/CoPt nanocomposite films fabricated by electro-infiltration

    Directory of Open Access Journals (Sweden)

    Xiao Wen

    2017-05-01

    Full Text Available This paper introduces a potentially scalable electro-infiltration process to produce exchange-coupled hard magnetic nanocomposite thin films. Fe-Co/CoPt nanocomposite films are fabricated by deposition of CoFe2O4 nanoparticles onto Si substrate, followed by electroplating of CoPt. Samples are subsequently annealed under H2 to reduce the CoFe2O4 to magnetically soft Fe-Co and also induce L10 ordering in the CoPt. Resultant films exhibit 0.97 T saturation magnetization, 0.70 T remanent magnetization, 127 kA/m coercivity and 21.8 kJ/m3 maximum energy density. First order reversal curve (FORC analysis and δM plot are used to prove the exchange coupling between soft and hard magnetic phases.

  1. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    Directory of Open Access Journals (Sweden)

    Michail eTsampas

    2013-08-01

    Full Text Available A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  2. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  3. Processing and thin film formation of TiO{sub 2}-Pt nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Es-Souni, M.; Kartopu, G.; Habouti, S.; Piorra, A.; Solterbeck, C.H. [Institute for Materials and Surface Technology, Kiel University of Applied Sciences, Grenzstr. 3, 24149 Kiel (Germany); Es-Souni, Mar.; Brandies, H.F. [Faculty of Dentistry, Christian-Albrecht University, Kiel (Germany)

    2008-02-15

    Thin films of TiO{sub 2}-Pt nanocomposites containing 4 at% Pt have been processed via spin-coating. Film characterization involved XRD, Raman as well as XPS and scanning surface potential microscopy (SSPM). After annealing at 500 C the thin films consisted of nanocrystalline anatase and a few nm Pt nanoclusters. Annealing at 600 C resulted in the formation of a high volume fraction of rutile, {proportional_to}70%, and a coarsening of the microstructure, including Pt nanoparticles which attained a mean particle size of up to 11 nm. These results contrasted with those of pure TiO{sub 2} films obtained at 600 C which showed only a limited amount of rutile formation, namely 9%. Raman spectra of Pt-containing samples exhibited a fluorescence emission, as background to the Raman features, which was attributed to photoinduced luminescence from Pt nanoparticles supported by their surface plasmon resonance. Emission intensity being much higher in 600 C film indicated a difference between the two films in terms of the (Pt) particle size and crystallinity, in agreement with the XRD results. XPS investigations revealed different oxidation states of Pt at the surface and in the film interior. The spectra suggested a slight oxidation of Pt at the surface while mainly metallic Pt was revealed in the film interior. The morphology and distribution of the Pt nanoparticles in the films annealed at 600 C were investigated using SSPM. Discrete Pt nanoparticles, mainly distributed in the vicinity of TiO{sub 2} grain boundaries were revealed. Nanocomposite film formation, Pt distribution and morphology are explained in terms of the limited solubility of Pt in the TiO{sub 2} lattice and its higher surface energy in comparison to that of TiO{sub 2}. Both effects are believed to lead to the formation of Pt nanoparticles at the (anatase or rutile) grain boundaries. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Magnetic phases in Pt/Co/Pt films induced by single and multiple femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Kisielewski, J., E-mail: jankis@uwb.edu.pl; Kurant, Z.; Sveklo, I.; Tekielak, M.; Maziewski, A. [Faculty of Physics, University of Białystok, Ciołkowskiego 1L, 15-245 Białystok (Poland); Wawro, A. [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland)

    2016-05-21

    Ultrathin Pt/Co/Pt trilayers with initial in-plane magnetization were irradiated with femtosecond laser pulses. In this way, an irreversible structural modification was introduced, which resulted in the creation of numerous pulse fluence-dependent magnetic phases. This was particularly true with the out-of-plane magnetization state, which exhibited a submicrometer domain structure. This effect was studied in a broad range of pulse fluences up to the point of ablation of the metallic films. In addition to this single-pulse experiment, multiple exposure spots were also investigated, which exhibited an extended area of out-of-plane magnetization phases and a decreased damage threshold. Using a double exposure with partially overlapped spots, a two-dimensional diagram of the magnetic phases as a function of the two energy densities was built, which showed a strong inequality between the first and second incoming pulses.

  5. Magnetic phases in Pt/Co/Pt films induced by single and multiple femtosecond laser pulses

    International Nuclear Information System (INIS)

    Kisielewski, J.; Kurant, Z.; Sveklo, I.; Tekielak, M.; Maziewski, A.; Wawro, A.

    2016-01-01

    Ultrathin Pt/Co/Pt trilayers with initial in-plane magnetization were irradiated with femtosecond laser pulses. In this way, an irreversible structural modification was introduced, which resulted in the creation of numerous pulse fluence-dependent magnetic phases. This was particularly true with the out-of-plane magnetization state, which exhibited a submicrometer domain structure. This effect was studied in a broad range of pulse fluences up to the point of ablation of the metallic films. In addition to this single-pulse experiment, multiple exposure spots were also investigated, which exhibited an extended area of out-of-plane magnetization phases and a decreased damage threshold. Using a double exposure with partially overlapped spots, a two-dimensional diagram of the magnetic phases as a function of the two energy densities was built, which showed a strong inequality between the first and second incoming pulses.

  6. Thin film circuits for future applications. Pt. 2. Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Haug, G; Houska, K H; Schmidt, H J; Sprengel, H P; Wohak, K

    1976-06-01

    Investigations of thin film diffusion processes and reactions with encapsulation materials resulted in improved long term stability of evaporated NiCr resistors, SiO capacitors and NiCr/Au conductors for thin film circuits. Stable NiCr resistor networks can be formed on ceramic substrates, and SiO capacitors of good quality can be deposited on the new very smooth ceramic substrates. The knowledge of the influence of evaporation parameters make the production of SiO capacitors with definite properties and good reproducibility possible. The range of capacitance of tantalum thin film circuits can be extended by integration with evaporated SiO capacitors.

  7. Cobalt hydroxide film on Pt as co-catalyst for oxidation of polyhydric alcohols in alkaline medium

    International Nuclear Information System (INIS)

    Das, Debasmita; Das, Kaushik

    2010-01-01

    Electrochemical behavior of chemically prepared Co(OH) 2 film on Pt has been studied in alkaline medium using cyclic voltammetry and chronoamperometry. Amount of Co(OH) 2 deposited increases linearly with the number of times of deposition. The deposit is of fibrous structure, as shown by scanning electron microphotograph. There is evidence of Co II /Co III and Co III /Co IV redox transitions during the cyclic potential scan. The former oxidation proceeds under diffusion control. The Co(OH) 2 deposit acts as an efficient co-catalyst for anodic oxidation of ethanediol, propanediol and glycerol on Pt in alkaline medium. This is demonstrated by appreciable enhancement of the alcohol oxidation currents upon deposition of Co(OH) 2 on Pt. Among the alcohols studied, the highest oxidation currents are obtained for ethanediol, both on Co(OH) 2 /Pt and bare Pt. Co(OH) 2 alone also acts as a redox mediator for alcohol oxidation at more positive potentials.

  8. Spontaneous deposition of Ru on Pt (100: morphological and electrochemical studies. Preliminary results of ethanol oxidation at Pt(100/Ru

    Directory of Open Access Journals (Sweden)

    Colle Vinicius D.

    2003-01-01

    Full Text Available In the present work ruthenium was deposited in submonolayer amounts on Pt(100 by spontaneous deposition at several deposition times. The Pt (100/Ru surfaces were analyzed using ex-situ STM to image the deposits characteristic of ruthenium on Pt (100. It was observed the formation of ruthenium islands with diameters between 1.0 and 4.5 nm with bi-atomic thickness in the center of the islands. A homogeneous distribution of the ruthenium islands on the platinum terraces was found, with no preferential deposition on steps or surface defect sites. The ruthenium coverage degree had been calculated by the decrease of charge of the hydrogen adsorption-desorption peaks in the cyclic voltammograms of the Pt(100/Ru electrodes. The Pt(100/Ru electrodes with a ruthenium coverage degree of ca. 0.3 showed a high activity for the ethanol electrooxidation. The electrochemical experimental results support strongly the bifunctional mechanism for the enhanced ethanol oxidation.

  9. Iron films deposited on porous alumina substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Yasuhiro, E-mail: yyasu@rs.kagu.tus.ac.jp; Tanabe, Kenichi; Nishida, Naoki [Tokyo University of Science (Japan); Kobayashi, Yoshio [The University of Electro-Communications (Japan)

    2016-12-15

    Iron films were deposited on porous alumina substrates using an arc plasma gun. The pore sizes (120 – 250 nm) of the substrates were controlled by changing the temperature during the anodic oxidation of aluminum plates. Iron atoms penetrated into pores with diameters of less than 160 nm, and were stabilized by forming γ-Fe, whereas α-Fe was produced as a flat plane covering the pores. For porous alumina substrates with pore sizes larger than 200 nm, the deposited iron films contained many defects and the resulting α-Fe had smaller hyperfine magnetic fields. In addition, only a very small amount of γ-Fe was obtained. It was demonstrated that the composition and structure of an iron film can be affected by the surface morphology of the porous alumina substrate on which the film is grown.

  10. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  11. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  12. The Electrochemical Atomic Layer Deposition of Pt and Pd nanoparticles on Ni foam for the electrooxidation of alcohols

    CSIR Research Space (South Africa)

    Modibedi, RM

    2012-10-01

    Full Text Available Electrodeposition of Pt and Pd metal by surface limited redox replacement reactions was performed using the electrochemical atomic layer deposition. Carbon paper and Ni foam were used as substrates for metal deposition. Supported Pt and Pd...

  13. Functional multi-walled carbon nanotube/polysiloxane composite films as supports of PtNi alloy nanoparticles for methanol electro-oxidation

    International Nuclear Information System (INIS)

    Wang Zhicai; Ma Zhengming; Li Hulin

    2008-01-01

    We demonstrate the use of molecular monolayers to enhance the nucleation of electrocatalytically active PtNi alloy nanoparticles onto the multi-walled carbon nanotubes (MWCNTs). After the siloxane was polymerized on the nanotube surfaces, the carbon nanotubes were embedded within the polysiloxane shell with a hydrophilic amino group situated outside. Subsequent deposition of PtNi nanoparticles led to high density of 3-10 nm diameter PtNi alloy nanoparticles uniformly deposited along the length of the carbon nanotubes. The presence of MWCNTs and PtNi in the composite films was confirmed by transmission electron microscopy (TEM), X-ray diffraction (XRD) and energy dispersion X-ray spectra analysis (EDS). The electrocatalytic activity of the PtNi-modified MWCNT/polysiloxane (PtNi/Si-MWCNT) composite electrode for electro-oxidation of methanol was investigated by cyclic voltammetry (CV), and excellent electrocatalytic activity can be observed

  14. Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

    International Nuclear Information System (INIS)

    Chen, S.C.; Kuo, P.C.; Sun, A.C.; Chou, C.Y.; Fang, Y.H.; Wu, T.H.

    2006-01-01

    An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H c- parallel ) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film

  15. Columnar grain growth of FePt(L10) thin films

    International Nuclear Information System (INIS)

    Yang En; Ho Hoan; Laughlin, David E.; Zhu Jiangang

    2012-01-01

    An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L1 0 ) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 deg. C, a 16 nm thick perpendicular FePt film with ∼8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

  16. Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

    2017-04-15

    We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

  17. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    International Nuclear Information System (INIS)

    Zhu Xiaohong; Ren Yinjuan; Zhang Caiyun; Zhu Jiliang; Zhu Jianguo; Xiao Dingquan; Defaÿ, Emmanuel; Aïd, Marc

    2013-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm −1 ) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes. (paper)

  18. Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

    Science.gov (United States)

    Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

    2013-03-01

    Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.

  19. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  20. Magnetic properties of bimetallic nanoislands deposited on Pt(111)

    Energy Technology Data Exchange (ETDEWEB)

    Bornemann, Sven; Minar, Jan; Mankovsky, Sergey; Ebert, Hubert [Department Chemie und Biochemie, LMU Muenchen, 81377 Muenchen (Germany); Ouazi, Safia; Rusponi, Stefano; Brune, Harald [Institute of Condensed Matter Physics, EPF Lausanne (Switzerland); Staunton, Julie B. [Department of Physics, University of Warwick (United Kingdom)

    2010-07-01

    In recent years, magnetic nanostructures on surfaces have been the subject of intense research activities which are driven by fundamental as well as practical interests. One of the central questions for future applications is how the magnetic properties like the magnetic anisotropy evolve in-between single magnetic adatoms and submonolayer magnetic particle arrays. Experimentalists have succeeded in assembling surface supported single domain particles where the magnetic moments of all atoms form a so-called macrospin and it is commonly believed that the special magnetic characteristics of such structures are mainly due to their exposed low-coordinated edge atoms. For some of these novel systems, however, unexpected low anisotropies or reduced magnetic moments are observed which makes it difficult to find promising candidates for real life technical applications. To support these experimental efforts the fully relativistic spin-polarized KKR method has been applied to investigate the influence of spin-orbit coupling on the magnetic properties of various FeCo nanostructures deposited on Pt(111). The discussion focuses on interface and alloy contributions to the magnetic anisotropy in these systems.

  1. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin; Zeng, Hua Chun

    2008-01-01

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a

  2. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  3. Influence of electroformation regime on the specific properties of cobalt oxide‒platinum composite films deposited on conductive diamond

    Energy Technology Data Exchange (ETDEWEB)

    Spătaru, Tanţa; Osiceanu, Petre; Preda, Loredana; Munteanu, Cornel [Institute of Physical Chemistry “Ilie Murgulescu”, 202 Spl. Independenţei 060021, Bucharest (Romania); Spătaru, Nicolae, E-mail: nspataru@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, 202 Spl. Independenţei 060021, Bucharest (Romania); Fujishima, Akira [Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku Tokyo 162-8601 (Japan)

    2014-04-01

    Two straightforward electrochemical methods were used in the present work for depositing cobalt oxide-platinum composite films on boron-doped diamond substrates in order to put into evidence the effect of the electroformation regime on the morphological and electrochemical features of these hybrid systems. The shift from potentiostatic to potentiodynamic deposition enabled not only a significant improvement of the Pt particles dispersion but also a much higher surface concentration of oxygenated species of platinum. For similar Co{sub 3}O{sub 4} and Pt loadings, the specific capacitance of the composite films deposited by cyclic voltammetry was with ca. 8% higher than that of the potentiostatically obtained ones. Additional advantage of potentiodynamic deposition is the improved resistance to fouling during methanol anodic oxidation of Pt particles, tentatively ascribed to the higher surface concentration of oxygenated species of platinum. - Highlights: • Cobalt oxide-platinum composite films were electrodeposited on conductive diamond. • Composite films formed by cyclic voltammetry exhibit enhanced specific capacitance. • Potentiodynamic deposition enables higher concentration of oxygenated Pt species. • Co{sub 3}O{sub 4}–Pt films prepared by cyclic voltammetry are less susceptible to CO poisoning.

  4. High performance polymer electrolyte fuel cells with ultra-low Pt loading electrodes prepared by dual ion-beam assisted deposition

    International Nuclear Information System (INIS)

    Saha, Madhu Sudan; Gulla, Andrea F.; Allen, Robert J.; Mukerjee, Sanjeev

    2006-01-01

    Ultra-low pure Pt-based electrodes (0.04-0.12 mg Pt /cm 2 ) were prepared by dual ion-beam assisted deposition (dual IBAD) method on the surface of a non-catalyzed gas diffusion layer (GDL) substrate. Film thicknesses ranged between 250 and 750 A, these are compared with a control, a conventional Pt/C (1.0 mg Pt(MEA) /cm 2 , E-TEK). The IBAD electrode constituted a significantly different morphology, where low density Pt deposits (largely amorphous) were formed with varying depths of penetration into the gas diffusion layer, exhibiting a gradual change towards increasing crystalline character (from 250 to 750 A). Mass specific power density of 0.297 g Pt /kW is reported with 250 A IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V. This is contrasted with the commercial MEA with a loading of 1 mg Pt(MEA) /cm 2 where mass specific power density obtained was 1.18 g Pt /kW (at 0.65 V), a value typical of current state of the art commercial electrodes containing Pt/C. The principal shortcoming in this effort is the area specific power density which was in the range of 0.27-0.43 W/cm 2 (for 250-750 A IBAD) at 0.65 V, hence much below the automotive target value of 0.8-0.9 W/cm 2 (at 0.65 V). An attempt to mitigate these losses is reported with the use of patterning. In this context a series of patterns ranging from 45 to 80% Pt coverage were used in conjunction with a hexagonal hole geometry. Up to 30% lowering of mass transport losses were realized

  5. Aerosol deposition of Ba0.8Sr0.2TiO3 thin films

    Directory of Open Access Journals (Sweden)

    Branković Zorica

    2009-01-01

    Full Text Available In this work we optimized conditions for aerosol deposition of homogeneous, nanograined, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0 or Si covered by platinum (Pt (1 1 1 /Ti/SiO2/Si. Investigation showed that the best films were obtained at substrate temperature of 85ºC. After deposition films were slowly heated up to 650ºC, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crackfree, and smooth with rms roughness lower than 4 nm for both substrates.

  6. Ultrathin Pt films on Ni(111): Structure determined by surface x-ray diffraction

    International Nuclear Information System (INIS)

    Robach, O.; Isern, H.; Quiros, C.; Ferrer, S.; Steadman, P.; Peters, K. F.

    2003-01-01

    The growth of platinum on a nickel (111) single crystal under ultrahigh vacuum conditions was studied using surface x-ray diffraction on the ID03 beamline of the ESRF. Film thickness ranged from one to eight monoatomic layers (ML). Specular reflectivity was used to determine the growth mode and vertical lattice parameter of the Pt film. A two-dimensional (2D) growth up to 1 ML followed by more 3D growth was found. A small expansion of the Pt vertical lattice parameter was found. The Pt in-plane lattice parameter was measured. Its relaxation was found to be very slow, with a residual contraction of 2.3% in an 8-ML-thick film (with respect to bulk Pt). A Ni crystal truncation rod measured before and after growing 1 ML of Pt revealed the presence of a small amount of pseudomorphic Pt, adsorbed on both fcc and hcp sites. The stacking of the (111) Pt planes was investigated by measuring stacking-sensitive Pt diffraction rods. A strong tendency to stacking reversal was found at room temperature, with an amount of 'reversed' Pt about ten times higher than the amount of Pt with the same stacking as the Ni. An eight-layer Ni film on Pt(111) was also studied for comparison

  7. Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy

    NARCIS (Netherlands)

    Kessels, W.M.M.; Knoops, H.C.M.; Dielissen, S.A.F.; Mackus, A.J.M.; Sanden, van de M.C.M.

    2009-01-01

    Infrared spectroscopy was used to obtain absolute number information on the reaction products during atomic layer deposition of Pt from (methylcyclopentadienyl)trimethylplatinum [(MeCp)PtMe3] and O2. From the detection of CO2 and H2O it was established that the precursor ligands are oxidatively

  8. Electrochemical atomic layer deposition of Pt nanostructures on carbon paper and Ni foam; poster

    CSIR Research Space (South Africa)

    Louw, EK

    2012-07-01

    Full Text Available characteristic of polycrystalline Pt electrodes. ECALD produced good quality deposits that uniformly covered the carbon paper support. The advantages of preparing nanoparticles with this method include ease, flexibility and cost effectiveness. This could provide...

  9. Surface vertical deposition for gold nanoparticle film

    International Nuclear Information System (INIS)

    Diao, J J; Qiu, F S; Chen, G D; Reeves, M E

    2003-01-01

    In this rapid communication, we present the surface vertical deposition (SVD) method to synthesize the gold nanoparticle films. Under conditions where the surface of the gold nanoparticle suspension descends slowly by evaporation, the gold nanoparticles in the solid-liquid-gas junction of the suspension aggregate together on the substrate by the force of solid and liquid interface. When the surface properties of the substrate and colloidal nanoparticle suspension define for the SVD, the density of gold nanoparticles in the thin film made by SVD only depends on the descending velocity of the suspension surface and on the concentration of the gold nanoparticle suspension. (rapid communication)

  10. Study of obliquely deposited thin cobalt films

    International Nuclear Information System (INIS)

    Szmaja, W.; Kozlowski, W.; Balcerski, J.; Kowalczyk, P.J.; Grobelny, J.; Cichomski, M.

    2010-01-01

    Research highlights: → The paper reports simultaneously on the magnetic domain structure of obliquely deposited thin cobalt films (40 nm and 100 nm thick) and their morphological structure. Such studies are in fact rare (Refs. cited in the paper). → Moreover, to our knowledge, observations of the morphological structure of these films have not yet been carried out simultaneously by transmission electron microscopy (TEM) and atomic force microscopy (AFM). → The films of both thicknesses were found to have uniaxial in-plane magnetic anisotropy. → The magnetic microstructure of the films 40 nm thick was composed of domains running and magnetized predominantly in the direction perpendicular to the incidence plane of the vapor beam. → As the film thickness was changed from 40 nm to 100 nm, the magnetic anisotropy was observed to change from the direction perpendicular to parallel with respect to the incidence plane. → Thanks to the application of TEM and AFM, complementary information on the morphological structure of the films could be obtained. → In comparison with TEM images, AFM images revealed grains larger in size and slightly elongated in the direction perpendicular rather than parallel to the incidence plane. → These experimental findings clearly show that surface diffusion plays an important role in the process of film growth. → For the films 40 nm thick, the alignment of columnar grains in the direction perpendicular to the incidence plane was observed. → This correlates well with the magnetic domain structure of these films. → For the films 100 nm thick, the perpendicular alignment of columnar grains could also be found, although in fact with larger difficulty. → TEM studies showed that the films consisted mainly of the hexagonal close-packed (HCP) crystalline structure, but no preferred crystallographic orientation of the grains could be detected for the films of both thicknesses. → For the films 100 nm thick, the alignment of

  11. Pt/AlPO{sub 4} nanocomposite thin-film electrodes for ethanol electrooxidation

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Yuhong; Kang, Joonhyeon; Nam, Seunghoon; Byun, Sujin [WCU Hybrid Materials Program, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744 (Korea, Republic of); Park, Byungwoo, E-mail: byungwoo@snu.ac.kr [WCU Hybrid Materials Program, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744 (Korea, Republic of)

    2012-07-16

    The enhanced catalytic properties toward ethanol electrooxidation on Pt/AlPO{sub 4} nanocomposite thin-film electrodes were investigated. The Pt/AlPO{sub 4} nanocomposites with various Al/Pt ratios (0.27, 0.57, and 0.96) were fabricated by a co-sputtering method. All of the Pt/AlPO{sub 4} nanocomposites showed a negative shift in the onset potential and a higher current density than those of pure Pt electrode for the electrooxidation of ethanol. Among the various Pt/AlPO{sub 4} nanocomposite thin-film electrodes, the electrode with an atomic ratio of Al to Pt of 0.57 showed the highest electrocatalytic activity for ethanol electrooxidation. The activation enthalpy for the optimum Pt/AlPO{sub 4} nanocomposite was approximately 0.05 eV lower than that of pure Pt. It is believed that the enhancement in catalytic activity is due to the electron-rich Pt resulting from the Fermi-energy difference between Pt and AlPO{sub 4}. - Highlights: Black-Right-Pointing-Pointer The enhanced ethanol electrooxidation on Pt/AlPO{sub 4} nanocomposites is investigated. Black-Right-Pointing-Pointer The Pt/AlPO{sub 4} exhibits higher current density and lower onset potential than pure Pt. Black-Right-Pointing-Pointer The activation enthalpy for optimum Pt/AlPO{sub 4} electrode is {approx}0.05 eV lower than pure Pt. Black-Right-Pointing-Pointer XPS shows electron-rich Pt due to Fermi-energy difference between Pt and AlPO{sub 4}.

  12. Strong Metal Support Interaction of Pt and Ru Nanoparticles Deposited on HOPG Probed by the H-D Exchange Reaction

    DEFF Research Database (Denmark)

    Fiordaliso, Elisabetta M.; Dahl, Søren; Chorkendorff, Ib

    2012-01-01

    The interaction between metals and support is investigated in the case of 50 Å Pt and 50 Å Ru films deposited on a HOPG substrate. The films are prepared by electron beam physical vapor deposition and annealed in UHV to temperatures up to 700 °C. The equilibrium hydrogen exchange rate between...... adsorbed and gas phase at 1 bar is measured before and after annealing. The rate is measured in the temperature range of 40–200 °C at 1 bar, by utilization of the H-D exchange reaction. Experiments are performed on fresh cleaved and sputtered HOPG, which give similar results. We find that annealing...... the films from 150 up to 700 °C increases the amount of carbon present in the films up to 95%, as derived by surface analysis, indicating the formation of a carbon layer on top of the metal films. The exchange rate decreases dramatically with increasing carbon content on the films for both metals, pointing...

  13. Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

    International Nuclear Information System (INIS)

    Hu, Xiaoyuan; Cahill, David G.; Averback, Robert S.

    2001-01-01

    Dewetting and nanopattern formation of 3 - 10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr + at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3 - 10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr + and Ar + irradiation and 19.5keVHe + , Ar + , Kr + , and Xe + irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe + irradiation. [copyright] 2001 American Institute of Physics

  14. Sliding properties of coevaporated and nitrogen-implanted Pt50Ti50 films on AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Zheng, L.R.; Hung, L.S.; Mayer, J.W.

    1988-01-01

    Thin Pt 50 Ti 50 films were deposited on a AISI 304 stainless steel substrate by co-evaporation. Dry sliding tests and wear track measurements revealed some improvement in sliding properties compared with the bare substrate. Implantation of the coated substrate with xenon ions did not produce any further improvement in friction and wear but a dramatic improvement resulted from nitrogen ion implantation. This was accompanied by a change in microstructure arising from an amorphous to crystalline phase transformation in the alloy film. (U.K.)

  15. Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Xie, Qian; Zhang, Zhengjun [Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-03-15

    To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

  16. Polythiophene thin films electrochemically deposited on sol-gel based TiO2 for photovoltaic applications

    International Nuclear Information System (INIS)

    Valaski, R.; Yamamoto, N.A.D.; Canestraro, C.D.; Micaroni, L.; Mello, R.M.Q.; Quirino, W.G.; Legani, C.; Achete, C.A.; Roman, L.S.; Cremona, M.

    2010-01-01

    In this work, the influence of titanium dioxide (TiO 2 ) thin films on the efficiency of organic photovoltaic devices based on electrochemically synthesized polythiophene (PT) was investigated. TiO 2 films were produced by sol-gel methods with controlled thickness. The best TiO 2 annealing condition was determined through the investigation of the temperature influence on the electron charge mobility and resistivity in a range between 723 K and 923 K. The PT films were produced by chronoamperometric method in a 3-electrode cell under a controlled atmosphere. High quality PT films were produced onto 40 nm thick TiO 2 layer previously deposited onto fluorine doped tin oxide (FTO) substrate. The morphology of PT films grown on both substrates and its strong influence on the device performance and PT minimum thickness were also investigated. The maximum external quantum efficiency (IPCE) reached was 9% under monochromatic irradiation (λ = 610 nm; 1 W/m 2 ) that is three orders of magnitude higher than that presented by PT-homolayer devices with similar PT thickness. In addition, the open-circuit voltage (V oc ) was about 700 mV and the short-circuit current density (J sc ) was 0.03 A/m 2 (λ = 610 nm; 7 W/m 2 ). However, as for the PT-homolayer also the TiO 2 /PT based devices are characterized by antibatic response when illuminated through FTO. Finally, the Fill Factor (FF) of these devices is low (25%), indicating that the series resistance (R s ), which is strongly dependent of the PT thickness, is too large. This large R s value is compensated by TiO 2 /PT interface morphology and by FTO/TiO 2 and TiO 2 /PT interface phenomena producing preferential paths in which the internal electrical field is higher, improving the device efficiency.

  17. Ion-assisted deposition of thin films

    International Nuclear Information System (INIS)

    Barnett, S.A.; Choi, C.H.; Kaspi, R.; Millunchick, J.M.

    1993-01-01

    Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the recent interest in this area has been centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity device-quality semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism during heteroepitaxial growth

  18. Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

    International Nuclear Information System (INIS)

    Sun, A.-C.; Hsu, J.-H.; Huang, H.L.; Kuo, P.C.

    2006-01-01

    This work develops a new method for growing L1 0 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1 0 FePt(0 0 1) magnetic layer. The squareness of the L1 0 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1 0 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1 0 FePt(1 1 1) to L1 0 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1 0 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1 0 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces

  19. Electrocatalytic activity of Pt and PtCo deposited on Ebonex by BH reduction

    International Nuclear Information System (INIS)

    Slavcheva, E.; Nikolova, V.; Petkova, T.; Lefterova, E.; Dragieva, I.; Vitanov, T.; Budevski, E.

    2005-01-01

    The method of borohydride reduction (BH) has been applied to synthesize Pt and PtCo nanoparticles supported on Magneli phase titanium oxides, using Pt and Co ethylenediamine complexes as metal precursors. The phase composition of the synthesized catalysts, their morphology and surface structure were studied by physical methods for bulk and surface analysis, such as electron microprobe analysis (EMPA), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and BET technique. The catalytic activity towards oxygen evolution reaction in alkaline aqueous solution was investigated using the common electrochemical techniques. It was found that PtCo/Ebonex facilitates essentially the oxygen evolution which starts at lower overpotentials and proceeds with higher rate compared to both the supported Pt and unsupported PtCo catalysts. The observed effect is prescribed to metal-metal and metal-support interactions. The Ebonex possesses a good electrical conductivity and corrosion resistance at high anodic potentials and despite its low surface area is considered as a potential catalyst carrier for the oxygen evolution reaction

  20. Chemical vapour deposition of thin-film dielectrics

    International Nuclear Information System (INIS)

    Vasilev, Vladislav Yu; Repinsky, Sergei M

    2005-01-01

    Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

  1. Orientation control of chemical solution deposited LaNiO3 thin films

    International Nuclear Information System (INIS)

    Ueno, Kengo; Yamaguchi, Toshiaki; Sakamoto, Wataru; Yogo, Toshinobu; Kikuta, Koichi; Hirano, Shin-ichi

    2005-01-01

    High quality LaNiO 3 (LNO) thin films with preferred orientation could be synthesized on Pt/Ti/SiO 2 /Si substrates at 700 deg. C using the chemical solution deposition method. The homogeneous and stable LNO precursor solutions were prepared using lanthanum isopropoxide and nickel (II) acetylacetonate in a mixed solvent of absolute ethanol and 2-methoxyethanol. The oriented LNO thin films exhibit metallic electro-conduction, and their resistivity at room temperature is sufficiently low for making them an alternative electrode material for functional ceramic thin films

  2. Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

    CERN Document Server

    Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

    2002-01-01

    The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

  3. Amorphous Terfenol-D films using nanosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

    2009-01-01

    Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

  4. Magnetic characteristics and nanostructures of FePt granular films with GeO2 segregant

    Science.gov (United States)

    Ono, Takuya; Moriya, Tomohiro; Hatayama, Masatoshi; Tsumura, Kaoru; Kikuchi, Nobuaki; Okamoto, Satoshi; Kitakami, Osamu; Shimatsu, Takehito

    2017-01-01

    To realize a granular film composed of L10-FePt grains with high uniaxial magnetic anisotropy energy, Ku, and segregants for energy-assisted magnetic recording, a FePt-GeO2/FePt-C stacked film was investigated in the engineering process. The FePt-GeO2/FePt-C stacked film fabricated at a substrate temperature of 450 °C realized uniaxial magnetic anisotropy, Kugrain , of about 2.5 × 107 erg/cm3, which is normalized by the volume fraction of FePt grains, and a granular structure with an averaged grain size of 7.7 nm. As the thickness of the FePt-GeO2 upper layer was increased to 9 nm, the Ku values were almost constant. That result differs absolutely from the thickness dependences of the other oxide segregant materials such as SiO2 and TiO2. Such differences on the oxide segregant are attributed to their chemical bond. The strong covalent bond of GeO2 is expected to result in high Ku of the FePt-GeO2/FePt-C stacked films.

  5. Low-pressure chemical vapor deposition as a tool for deposition of thin film battery materials

    NARCIS (Netherlands)

    Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

    2009-01-01

    Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on

  6. Sputtering ultra-small Pt on nanographitic flakes deposited by electrophoresis for ethanol electro oxidation

    Science.gov (United States)

    Daryakenari, Ahmad Ahmadi; Daryakenari, Mohammad Ahmadi; Omidvar, Hamid

    2018-01-01

    To acquire highly efficient and cost-effective fuel cells, numerous research works have been carried out to the development low cost and excellent performance of electrocatalysts. In this paper, a solution-based electrophoretic deposition (EPD) technique for fabrication of Pt-based catalyst layers is studied. Nanographitic flake coatings used as catalyst support for sputtered platinium (Pt) were fabricated via the electrophoretic deposition (EPD) of dispersed nanographitic flakes in isopropyl alcohol. Magnesium nitrate hexahydrate (MNH) was used as an additive binder in the EPD process. Subsequently, the platinium particles were deposited by a direct sputtering on the fabricated nanographitic flake coatings.

  7. Stress evaluation of chemical vapor deposited silicon dioxide films

    International Nuclear Information System (INIS)

    Maeda, Masahiko; Itsumi, Manabu

    2002-01-01

    Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsic stress increases with increasing the deposition rate under the same deposition temperature, and decreases with increasing substrate temperature. Electron spin resonance (ESR) active defects in the films were observed when the films were deposited at 380 deg. C and 450 deg. C. The ESR signal intensity decreases drastically with increasing deposition temperature. The intrinsic stress correlates very closely to the intensity of the ESR-active defects, that is, the films with larger intrinsic stress have larger ESR-active defects. It is considered that the intrinsic stress was generated because the voids caused by local bond disorder were formed during random network formation among the SiO 4 tetrahedra. This local bond disorder also causes the ESR-active defects

  8. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  9. Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

    International Nuclear Information System (INIS)

    Dias, R J; Romano-Rodriguez, A; O'Regan, C; Holmes, J D; Petkov, N; Thrompenaars, P; Mulder, J J L

    2012-01-01

    Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.

  10. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  11. Electrochemical reduction of CO2 on compositionally variant Au-Pt bimetallic thin films

    NARCIS (Netherlands)

    Ma, M.; Hansen, H.A.; Valenti, M.; Wang, Z.; Cao, A.; Dong, M.; Smith, W.A.

    2017-01-01

    The electrocatalytic reduction of CO2 on Au-Pt bimetallic catalysts with different compositions was evaluated, offering a platform for uncovering the correlation between the catalytic activity and the surface composition of bimetallic electrocatalysts. The Au-Pt alloy films were synthesized by a

  12. Field-angle dependence of magnetic resonance in Pt/NiFe films

    International Nuclear Information System (INIS)

    Inoue, H.Y.; Harii, K.; Saitoh, E.

    2007-01-01

    Ferromagnetic resonance in NiFe/ amorphous Pt bilayer thin films was investigated with changing the external field direction. The spectral width of the ferromagnetic resonance depends critically on the external-magnetic-field direction. We found that the sample dependence of the spectral width is enhanced with deviation of external field direction from the direction along the film plain, implying an important role of spin directions in field-induced spin-decoherence mechanism in Pt

  13. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  14. Recent progress of obliquely deposited thin films for industrial applications

    Science.gov (United States)

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  15. Broadband THz pulse emission and transmission properties of nanostructured Pt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Mingzhe [Department of Physics and Electronics, Liupanshui Normal University, Liupanshui, Guizhou 553004 (China); College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China); Mu, Kaijun; Zhang, Cunlin [Department of Physics, Capital Normal University, Yuquan Road 100082, Beijing (China); Gu, Haoshuang, E-mail: guhs@hubu.edu.cn [Department of Electronic Sci& Tech, Hubei University, Xueyuan Road 430062, Wuhan, Hubei (China); Ding, Zhao [College of Electronics and Information, Guizhou University, Huaxi 550025, Guiyang, Guizhou (China)

    2015-10-01

    The THz transmission and emitting properties of a composite metallic nanostructure, composed of Ag nanowires electrodeposited in an anodic aluminum oxide (AAO) template and a Pt thin film, were investigated by using a femtosecond pulse laser irradiation. The microstructure of the above sub-wavelength nanostructure was investigated by XRD, SEM, AFM and TEM. The results indicated that the thickness of the Pt thin film was about 200 nm and the Ag nanowire array had a sparse and random distribution inside the AAO template, with a length distribution in the range of 10–25 μm. The THz radiation properties of above sub-wavelength nanostructure indicated that the generated THz fluence from the Pt film was a magnitude of μW scale with a broadband frequency range and its subsequent transmission could be significantly improved by the better impedance matching property of the Ag nanowire embedded AAO film compared with that of the empty AAO film.

  16. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  17. Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

    Science.gov (United States)

    Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

    2018-05-01

    Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

  18. Ti:Pt:Au:Ni thin-film CVD diamond sensor ability for charged particle detection.

    Science.gov (United States)

    Kasiwattanawut, Haruetai; Tchouaso, Modeste Tchakoua; Prelas, Mark A

    2018-05-22

    This work demonstrates the development of diamond sensors with reliable contacts using a new metallization formula, which can operate under high-pressure gas environment. The metallization was created using thin film layers of titanium, platinum, gold and nickel deposited on a single crystal electronic grade CVD diamond chip. The contacts were 2 mm in diameter with thickness of 50/5/20/150 nm of Ti:Pt:Au:Ni. The optimum operating voltage of the sensor was determined from the current-voltage measurements. The sensor was calibrated with 239 Pu and 241 Am alpha radiation sources at 300 V. The energy resolution of the Ti:Pt:Au:Ni diamond sensor was determined to be 7.6% at 5.2 MeV of 239 Pu and 2.2% at 5.48 MeV of 241 Am. The high-pressure gas loading environment under which this sensor was used is discussed. Specifically, experimental observations are described using hydrogen loading of nickel as a means of initiating low energy nuclear reactions. No neutrons, electrons, ions or other ionizing radiations were observed in these experiments. Copyright © 2018 Elsevier Ltd. All rights reserved.

  19. Photocatalytic Reduction of CO2 to Methane on Pt/TiO2 Nanosheet Porous Film

    Directory of Open Access Journals (Sweden)

    Li Qiu-ye

    2014-01-01

    Full Text Available Anatase TiO2 nanosheet porous films were prepared by calcination of the orthorhombic titanic acid films at 400°C. They showed an excellent photocatalytic activity for CO2 photoreduction to methane, which should be related to their special porous structure and large Brunauer-Emmett-Teller (BET surface area. In order to further improve the photocatalytic activity, Pt nanoparticles were loaded uniformly with the average size of 3-4 nm on TiO2 porous films by the photoreduction method. It was found that the loading of Pt expanded the light absorption ability of the porous film and improved the transformation efficiency of CO2 to methane. The conversion yield of CO2 to methane on Pt/TiO2 film reached 20.51 ppm/h·cm2. The Pt/TiO2 nanosheet porous film was characterized by means of X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscope (TEM, and ultraviolet-visible light diffuse reflectance spectra (UV-vis DRS. Moreover, the transient photocurrent-time curves showed that the Pt/TiO2 nanosheet porous film exhibited higher photocurrent, indicating that the higher separation efficiency of the photogenerated charge carriers was achieved.

  20. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin

    2008-12-16

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a wide range of tunable wettabilities from superhydrophilicity to superhydrophobicity (water contact angles: 0° to 170°). Our approach offers synthetic flexibility in controlling film architecture, surface topography, coating texture, crystallite size, and chemical composition of modifiers (e.g., SAMs derived from alkanethiols). For example, wettability properties of the nanocomposite films can be finely tuned with both inorganic phase (i.e., ZnO/SiO2 and Pt/ZnO/SiO2) and organic phase (i.e., SAMs on Pt/ZnO/SiO2). Due to the presence of catalytic components Pt/ZnO within the nanocomposites, surface reactions of the organic modifiers can further take place at room temperature and elevated temperatures, which provides a means for SAM formation and elimination. Because the Pt/ZnO forms an excellent pair of metal-semiconductors for photocatalysis, the anchored SAMs can also be modified or depleted by UV irradiation (i.e., the films possess self-cleaning ability). Potential applications of these nanocomposite films have been addressed. Our durability tests also confirm that the films are thermally stable and structurally robust in modification- regeneration cycles. © 2008 American Chemical Society.

  1. Magnetic properties of Co/Pt-Pd multilayer thin film media

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, N.; Igarashi, S.; Fujita, F.; Koike, K.; Kato, H. [Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [National University of Fine Arts and Music, Taitou-ku, Tokyo 110-8714 (Japan)

    2007-12-15

    We investigated the dependence of magnetic properties for Co/Pt{sub 100-x}Pd{sub x} multilayer thin films on the concentration in the Pt-Pd alloy layers. Perpendicular magneto anisotropy constant K {sub p} increases with increasing Pt concentration in the Pt-Pd layer, since the interface anisotropy between the Co and the Pt-Pd layers is enhanced by the increase of the Pt concentration. The Curie temperature and the temperature dependence of K{sub p} for the specimens increase with increasing the amount of Pt in the Pt-Pd layer. These results may indicate that the lattice distortion of the Co layer caused by the interface from the Pt-Pd layer becomes larger and the increase of the distortion enhances the interface anisotropy, since the lattice misfit between the Pt-Pd and the Co increases with increasing the Pt concentration. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

    Science.gov (United States)

    Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan

    2015-01-01

    Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.

  3. The A1 to L10 transformation in FePt films with ternary alloying additions of Mg, V, Mn, and B

    International Nuclear Information System (INIS)

    Wang, B.; Barmak, K.; Klemmer, T. J.

    2011-01-01

    The impact of ternary additions of Mg, V, Mn, and B on the A1 [face centered cubic (fcc)] to L1 0 phase transformation has been studied. The films were cosputter deposited from elemental targets at room temperature and annealed after deposition. The films had Mg additions in the range ∼0-2.6 at.%, V additions in the range 0.7-12.2 at.%, Mn additions in the range 2.2-16.3 at.%, and B additions in the range 1.2-12.9 at.%. For all four ternary alloy systems, annealing resulted in the formation of no other phases than the L1 0 phase. Ternary additions of C than the binary FePt films with the same Pt content.

  4. Synthesis of Pt-Sn core-shell nanoparticles deposited on SBA-15 modified

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez-Contreras, L.; Alonso-Lemus, I. [Centro de Investigacion en Materiales Avanzados S.C., Laboratorio Nacional de Nanotecnologia (Mexico); Botte, G. G. [Ohio University, Center for Electrochemical Engineering Research, Department of Chemical and Biomolecular Engineering (United States); Verde-Gomez, Y., E-mail: ysmaelverde@yahoo.com [Instituto Tecnologico de Cancun (Mexico)

    2013-07-15

    A novel one-step synthesis method to prepare Pt-Sn bimetallic nanoparticles supported on mesoporous silica with high surface area (SBA-15, 700 m{sup 2}/g) and narrow pore size distribution (around 9.5 nm) was developed. Tin incorporation plays an important dual role, to create active sites into the silica walls that serve as particles anchors center, and to grow Pt-Sn core-shell nanoparticles. High-resolution transmission and scanning electron microscopy, and X-ray diffraction pattern confirm the formation of the Pt-Sn core-shell type nanoparticles ( Almost-Equal-To 1-10 nm). The metal loading was 2.2 and 2.3 wt% for Pt and Sn, respectively. Electron microscopy results show that the metal nanoparticles were deposited not only on the matrix, but also inside of it. Structural, textural, and morphological features of the SBA-15 were slightly affected after the nanoparticles deposition, maintaining its high surface area. The results obtained suggest that Pt-Sn on SBA-15 could be attractive material for several catalytic applications, due to the narrow particle size distribution achieved (from 1 to 10 nm) the high dispersion on the support, as well as the Pt-Sn alloy developed.Graphical Abstract.

  5. Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

    Science.gov (United States)

    Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

    2013-04-01

    ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

  6. Magnetic and structural properties of L1{sub 1} type CoPt-C ordered alloy perpendicular films as a function of C content

    Energy Technology Data Exchange (ETDEWEB)

    Shimatsu, T; Kataoka, H; Aoi, H [Research Institute of Electrical Communication, Tohoku University, Sendai, 980-8577 (Japan); Sato, H; Okamoto, S; Kitakami, O, E-mail: shimatsu@riec.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577 (Japan)

    2010-01-01

    Magnetic and structural properties of L1{sub 1} type (Co{sub 0.5}Pt{sub 0.5}){sub 100-X}-C{sub X} ordered alloy perpendicular films, fabricated on 2.5 inch size glass disks by sputter deposition, were examined as a function of C content, X. L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C polycrystalline films (10 nm thickness), with <111> axis (the easy axis) perpendicular to the film plane, were successfully fabricated even for a 30 vol% C content. Structural analysis indicated the segregation of C to the grain boundaries. Uniaxial magnetic anisotropy, K{sub u}, of Co{sub 0.5}Pt{sub 0.5} films without C addition was relatively low, about 1.5x10{sup 7} erg/cm{sup 3} under the present deposition conditions. However, the addition of 5 vol.% C to Co-Pt films enhanced the ordering, resulting in an increase in K{sub u} to around 2.5 x10{sup 7} erg/cm{sup 3}. A further increase in C content reduced K{sub u}; however, K{sub u} maintained a relatively large value of about 1.8x10{sup 7} erg/cm{sup 3} even for a 20vol% C content, without degrading the easy axis orientation perpendicular to the film plane. Experimental results demonstrated the potential of the L1{sub 1} type Co{sub 0.5}Pt{sub 0.5}-C films for use in granular media applications, due to their very high K{sub u}, the relatively low fabrication temperature, and good controllability of the grain orientation.

  7. Room temperature H{sub 2}S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) thick films

    Energy Technology Data Exchange (ETDEWEB)

    More, P.S., E-mail: p_smore@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400 032 (India); Raut, R.W. [Department of Botany, Institute of Science, Mumbai 400 032 (India); Ghuge, C.S. [Department of Physics, Institute of Science, Mumbai 400 032 (India)

    2014-02-14

    The study reports H{sub 2}S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) films. The porous alumina (PoAl) thick layers were formed in the dark on aluminum substrates using an electrochemical anodization method. Thin semitransparent platinum (Pt) films were deposited on PoAl samples using chemical bath deposition (CBD) method. The films were characterized using energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM). The thicknesses of coated and bare films were measured using ellipsometry. The sensing properties such as sensitivity factor (S.F.), response time, recovery time and repeatability were measured using a static gas sensing system for H{sub 2}S gas. The EDAX studies confirmed the purity of Pt–PoAl film and indicated the formation of pure platinum (Pt) phase. The ellipsometry studies revealed the thickness of PoAl layer of about 15–17 μm on aluminum substrates. The SEM studies demonstrated uniform distribution of spherical pores with a size between 0.250 and 0.500 μm for PoAl film and nearly spherical platinum particles with average particle size ∼100 nm for Pt–PoAl film. The gas-sensing properties of these samples were studied in a home-built static gas characterization system. The H{sub 2}S gas sensing properties of Pt–PoAl at 1000 ppm of H{sub 2}S gave maximum sensitivity factor (S.F.) = 1200. The response time and recovery time were found to be 2–3 min and ∼1 min respectively. Further, the measurement of H{sub 2}S gas sensing properties clearly indicated the repeatability of gas sensing response of Pt–PoAl film. The present study indicated the significant potential of Pt coated PoAl films for H{sub 2}S gas sensing applications in diverse areas. - Highlights: • Electrochemical anodization, cheap and effective method for fabrication of PoAl. • Chemical bath deposition, a simple and effective method for deposition of Pt on PoAl. • A nano-composite film sensor with high sensitivity

  8. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  9. Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

    International Nuclear Information System (INIS)

    Wang Hao; Yang, F.J.; Wang, H.B.; Cao, X.; Xue, S.X.; Wang, J.A.; Gao, Y.; Huang, Z.B.; Yang, C.P.; Chiah, M.F.; Cheung, W.Y.; Wong, S.P.; Li, Q.; Li, Z.Y.

    2006-01-01

    FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO 2 /Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 deg. C

  10. Purity and resistivity improvements for electron-beam-induced deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mulders, J.J.L. [FEI Company, Eindhoven (Netherlands)

    2014-12-15

    Electron-beam-induced deposition (EBID) of platinum is used by many researchers. Its main application is the formation of a protective layer and the ''welding material'' for making a TEM lamella with a focused ion beam thinning process. For this application, the actual composition of the deposition is less relevant, and in practice, both the mechanical strength and the conductivity are sufficient. Another important application is the creation of an electrical connection to nanoscale structures such as nano-wires and graphene. To serve as an electrical contact, the resistivity of the Pt deposited structure has to be sufficiently low. Using the commonly used precursor MeCpPtMe{sub 3} for deposition, the resistivity as created by the basic process is 10{sup +5}-10{sup +6} higher than the value for bulk Pt, which is 10.6 μΩ cm. The reason for this is the high abundance of carbon in the deposition. To improve the deposition process, much attention has been given by the research community to parameter optimization, to ex situ or in situ removal of carbon by anneal steps, to prevention of carbon deposition by use of a carbon-free precursor, to electron beam irradiation under a high flux of oxygen and to the combination with other techniques such as atomic layer deposition (ALD). In the latter technique, the EBID structures are used as a 1-nm-thick seed layer only, while the ALD is used to selectively add pure Pt. These techniques have resulted in a low resistivity, today approaching the 10-150 μΩ cm, while the size and shape of the structure are preserved. Therefore, now, the technique is ready for application in the field of contacting nano-wires. (orig.)

  11. Atomic layer deposition of a MoS₂ film.

    Science.gov (United States)

    Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

    2014-09-21

    A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

  12. Lanthanoid titanate film structure deposited at different temperatures in vacuum

    International Nuclear Information System (INIS)

    Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

    1991-01-01

    Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

  13. Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Dekkers, Jan M.; Houwman, Evert Pieter; Vu, H.T.; Vu, Hung N.; Rijnders, Augustinus J.H.M.

    2016-01-01

    Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization

  14. Factors controlling the microstructure of Ce0.9Gd0.1O2-δ films in pulsed laser deposition process

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Döbeli, M.

    2010-01-01

    Films of Ce0.9Gd0.1O2-delta (CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD p...

  15. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  16. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  17. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  18. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  19. Properties of electrophoretically deposited single wall carbon nanotube films

    International Nuclear Information System (INIS)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A.

    2015-01-01

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10 −3 Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm 3 , and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators

  20. First principles investigation of the activity of thin film Pt, Pd and Au surface alloys for oxygen reduction

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Hansen, Heine Anton; Rossmeisl, Jan

    2015-01-01

    Further advances in fuel cell technologies are hampered by kinetic limitations associated with the sluggish cathodic oxygen reduction reaction. We have investigated a range of different formulations of binary and ternary Pt, Pd and Au thin films as electrocatalysts for oxygen reduction. The most...... active binary thin films are near-surface alloys of Pt with subsurface Pd and certain PdAu and PtAu thin films with surface and/or subsurface Au. The most active ternary thin films are with pure metal Pt or Pd skins with some degree of Au in the surface and/or subsurface layer and the near-surface alloys...

  1. Plasma-deposited a-C(N) H films

    CERN Document Server

    Franceschini, D E

    2000-01-01

    The growth behaviour, film structure and mechanical properties of plasma-deposited amorphous hydrogenated carbon-nitrogen films are shortly reviewed. The effect of nitrogen-containing gas addition to the deposition to the hydrocarbon atmospheres used is discussed, considering the modifications observed in the chemical composition growth kinetics, carbon atom hybridisation and chemical bonding arrangements of a-C(N):H films. The overall structure behaviour is correlated to the variation of the mechanical properties.

  2. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  3. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  4. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    International Nuclear Information System (INIS)

    Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

    2013-01-01

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

  5. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  6. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  7. Pt-based Thin Films as Efficient and Stable Catalysts for Oxygen Electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora

    at the cathode of Polymer Electrolyte Membrane Fuel Cells (PEMFCs). Herein the fabrication method, which consists of co-sputtering of thin films, is presented in detail, explaining the challenges one must face in order to fabricate oxygen-free Pt-lanthanides and Pt-early transition metals alloys......This thesis presents the fabrication and characterization of Pt-based thin film catalysts for Oxygen Reduction Reaction (ORR). Gadolinium and Yttrium have been used as alloying materials, in preparation for the replacement of the traditional but economically disadvantageous pure Pt catalysts......, and the proposed solutions. The characterization of the catalysts focused mainly on the electrochemical testing using a Rotating Ring Disk Electrode (RRDE) setup, and includes X-ray Diffraction (XRD), X-ray Photoemission Spectroscopy (XPS), Angle-Resolved X-ray Photoelectron Spectroscopy (AR-XPS), Scanning...

  8. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  9. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  10. Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

    Science.gov (United States)

    2014-09-01

    function of heating rate. The FWHM of the Ill PZT texture components is sim 2978 Journal of the American Ceramic Society Mhin et al. Vol. 97, No. 9...Z39.18 ABSTRACT Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates Report Title The crystallization of lead zirconate...phase influencing texture evolution. The results suggest that PZT nucleates directly on Pt, which explains the observation of a more highly oriented

  11. Characterization of transparent silica films deposited on polymeric materials

    International Nuclear Information System (INIS)

    Teshima, K.; Sugimura, H.; Inoue, Y.; Takai, O.

    2002-01-01

    Silica films were synthesized by capacitively coupled RF PECVD using mixtures of organo-silane and oxygen as a source. The chemical bonding states and compositions of the films deposited were evaluated with FTIR and XPS. Film surfaces and cross-sections were observed by SEM. Oxygen transmission rates (OTR) of the films coated on polyethylene terephthalate (PET) substrates were measured by an isopiestic method. (Authors)

  12. Enhancement of L10 ordering with the c-axis perpendicular to the substrate in FePt alloy film by using an epitaxial cap-layer

    Directory of Open Access Journals (Sweden)

    Mitsuru Ohtake

    2017-05-01

    Full Text Available FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001 single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L10 ordering are investigated. Single-crystal FePt(001 films with disordered fcc structure (A1 grow epitaxially on the substrates at 200 °C. Single-crystal MgO(001 cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L10 occurs when the films are annealed at 600 °C. The FePt films with MgO cap-layers thicker than 2 nm consist of L10(001 variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L10(100 and (010 variants with the c-axis lying in the film plane. The in-plane and the out-of-plane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L10 ordering. The FePt films consisting of only L10(001 variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface.

  13. Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

    Science.gov (United States)

    Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

    2016-07-11

    The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

  14. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  15. Pt thermal atomic layer deposition for silicon x-ray micropore optics.

    Science.gov (United States)

    Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

    2018-04-20

    We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

  16. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-06-01

    The rarefied gas jet of aluminium is studied at Mach number Ma = (Uj /√{ kbTj / mg }) in the range .01 PVD) process for the development of the highly oriented pure metallic aluminum thin film with uniform thickness and strong adhesion on the surface of the substrate in the form of ionic plasma, so that the substrate can be protected from corrosion and oxidation and thereby enhance the lifetime and safety, and to introduce the desired surface properties for a given application. Here, H is the characteristic dimension, U_j and T_j are the jet velocity and temperature, n_d is the number density of the jet, m and d are the molecular mass and diameter, and kbis the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn=0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number, which allows scattering collisions to rapidly direct the atoms to the substrate.

  17. Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

    International Nuclear Information System (INIS)

    Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

    2006-01-01

    Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

  18. Critical Factors Controlling Pd and Pt Potential in Porphyry Cu–Au Deposits: Evidence from the Balkan Peninsula

    Directory of Open Access Journals (Sweden)

    Demetrios G. Eliopoulos

    2014-03-01

    Full Text Available Porphyry Cu–Au–Pd±Pt deposits are significant Au resources, but their Pd and Pt potential is still unknown. Elevated Pd, Pt (hundreds of ppb and Au contents are associated with typical stockwork magnetite-bornite-chalcopyrite assemblages, at the central parts of certain porphyry deposits. Unexpected high grade Cu–(Pd+Pt (up to 6 ppm mineralization with high Pd/Pt ratios at the Elatsite porphyry deposit, which is found in a spatial association with the Chelopech epithermal deposit (Bulgaria and the Skouries porphyry deposit, may have formed during late stages of an evolved hydrothermal system. Estimated Pd, Pt and Au potential for porphyry deposits is consistent with literature model calculations demonstrating the capacity of aqueous vapor and brine to scavenge sufficient quantities of Pt and Pd, and could contribute to the global platinum-group element (PGE production. Critical requirements controlling potential of porphyry deposits may be from the metals contained in magma (metasomatized asthenospheric mantle wedge as indicated by significant Cr, Co, Ni and Re contents. The Cr content may be an indicator for the mantle input.

  19. Characterization of Pb(Zr, Ti)O sub 3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

    CERN Document Server

    Shin, J C; Hwang, C S; Kim, H J; Lee, J M

    1999-01-01

    Pb(Zr, Ti)O sub 3 (PZT) thin films were deposited on Pt/SiO sub 2 /Si substrates by metal-organic chemical-vapor deposition technique using a solid delivery system to improve the reproducibility of the deposition. The self-regulation mechanism, controlling the Pb-content of the film, was observed to work above a substrate temperature of 620 .deg. C. Even with the self-regulation mechanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1Pt/PZT/Pt capacitor was Schottky emission with a barrier height of 1.36 eV.

  20. Nickel films: Nonselective and selective photochemical deposition and properties

    International Nuclear Information System (INIS)

    Smirnova, N.V.; Boitsova, T.B.; Gorbunova, V.V.; Alekseeva, L.V.; Pronin, V.P.; Kon'uhov, G.S.

    2006-01-01

    Nickel films deposited on quartz surfaces by the photochemical reduction of a chemical nickel plating solution were studied. It was found that the deposition of the films occurs after an induction period, the length of which depends on the composition of the photolyte and the light intensity. Ni particles with a mean diameter of 20-30 nm were detected initially by transmission electron microscopy. The particles then increased in size (50 nm) upon irradiation and grouped into rings consisting of 4-5 particles. Irradiation with high-intensity light produces three-dimensional films. The calculated extinction coefficient of the nickel film was found to be 4800 L mol -1 cm -1 . Electron diffraction revealed that the prepared amorphous nickel films crystallize after one day of storage. It was determined that the films exhibit catalytic activity in the process of nickel deposition from nickel plating solution. The catalytic action remains for about 5-7 min after exposure of the films to air. The processes of selective and nonselective deposition of the nickel films are discussed. The use of poly(butoxy titanium) in the process of selective photochemical deposition enables negative and positive images to be prepared on quartz surfaces

  1. Microstructural and magnetic properties of L10 FePt-C (0 0 1) textured nanocomposite films grown on different intermediate layers

    International Nuclear Information System (INIS)

    Chen, J S; Chow, G M; Lim, B C; Hu, J F; Ding, Y F; Ju, G

    2008-01-01

    The FePt : C films with different volume fractions of carbon and different thicknesses were epitaxially grown on a CrRu(2 0 0) underlayer with Pt and MgO intermediate layers. The magnetic properties and microstructure of these FePt : C films were investigated. The FePt : C films grown on the Pt intermediate layer consisted of a continuous layer of FePt, with overlying granular FePt grains, while the FePt : C films grown on the MgO intermediate layer consisted of granular FePt : C layers with overlying granular grains. The formation of the overlying granular FePt grains was attributed to carbon diffusion to the surface which resulted in the second nucleation of FePt. The different interface energies and surface energies of FePt on Pt and MgO intermediate layers caused the formation of an initial continuous FePt layer on the Pt intermediate layer and initial granular FePt layers on the MgO intermediate layer. The coupling between the continuous FePt layer or the granular FePt layer and the overlying granular FePt grains resulted in simultaneous magnetization reversal and thus strong exchange coupling in FePt : C films.

  2. Enhancement of the electrooxidation of ethanol on Pt-Sn-P/C catalysts prepared by chemical deposition process

    Science.gov (United States)

    Xue, Xinzhong; Ge, Junjie; Tian, Tian; Liu, Changpeng; Xing, Wei; Lu, Tianhong

    In this paper, five Pt 3Sn 1/C catalysts have been prepared using three different methods. It was found that phosphorus deposited on the surface of carbon with Pt and Sn when sodium hypophosphite was used as reducing agent by optimization of synthetic conditions such as pH in the synthetic solution and temperature. The deposition of phosphorus should be effective on the size reduction and markedly reduces PtSn nanoparticle size, and raise electrochemical active surface (EAS) area of catalyst and improve the catalytic performance. TEM images show PtSnP nanoparticles are highly dispersed on the carbon surface with average diameters of 2 nm. The optimum composition is Pt 3Sn 1P 2/C (note PtSn/C-3) catalyst in my work. With this composition, it shows very high activity for the electrooxidation of ethanol and exhibit enhanced performance compared with other two Pt 3Sn 1/C catalysts that prepared using ethylene glycol reduction method (note PtSn/C-EG) and borohydride reduction method (note PtSn/-B). The maximum power densities of direct ethanol fuel cell (DEFC) were 61 mW cm -2 that is 150 and 170% higher than that of the PtSn/C-EG and PtSn/C-B catalyst.

  3. Enhancement of the electrooxidation of ethanol on Pt-Sn-P/C catalysts prepared by chemical deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Xinzhong; Ge, Junjie; Tian, Tian [Changchun Institute of Applied Chemistry, Chinese Academy of Science, Changchun 130022 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Liu, Changpeng; Xing, Wei; Lu, Tianhong [Changchun Institute of Applied Chemistry, Chinese Academy of Science, Changchun 130022 (China)

    2007-10-25

    In this paper, five Pt{sub 3}Sn{sub 1}/C catalysts have been prepared using three different methods. It was found that phosphorus deposited on the surface of carbon with Pt and Sn when sodium hypophosphite was used as reducing agent by optimization of synthetic conditions such as pH in the synthetic solution and temperature. The deposition of phosphorus should be effective on the size reduction and markedly reduces PtSn nanoparticle size, and raise electrochemical active surface (EAS) area of catalyst and improve the catalytic performance. TEM images show PtSnP nanoparticles are highly dispersed on the carbon surface with average diameters of 2 nm. The optimum composition is Pt{sub 3}Sn{sub 1}P{sub 2}/C (note PtSn/C-3) catalyst in my work. With this composition, it shows very high activity for the electrooxidation of ethanol and exhibit enhanced performance compared with other two Pt{sub 3}Sn{sub 1}/C catalysts that prepared using ethylene glycol reduction method (note PtSn/C-EG) and borohydride reduction method (note PtSn/-B). The maximum power densities of direct ethanol fuel cell (DEFC) were 61 mW cm{sup -2} that is 150 and 170% higher than that of the PtSn/C-EG and PtSn/C-B catalyst. (author)

  4. High-coercivity FePt nanoparticle assemblies embedded in silica thin films

    International Nuclear Information System (INIS)

    Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

    2009-01-01

    The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

  5. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  6. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  7. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  8. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  9. Capillary assisted deposition of carbon nanotube film for strain sensing

    Science.gov (United States)

    Li, Zida; Xue, Xufeng; Lin, Feng; Wang, Yize; Ward, Kevin; Fu, Jianping

    2017-10-01

    Advances in stretchable electronics offer the possibility of developing skin-like motion sensors. Carbon nanotubes (CNTs), owing to their superior electrical properties, have great potential for applications in such sensors. In this paper, we report a method for deposition and patterning of CNTs on soft, elastic polydimethylsiloxane (PDMS) substrates using capillary action. Micropillar arrays were generated on PDMS surfaces before treatment with plasma to render them hydrophilic. Capillary force enabled by the micropillar array spreads CNT solution evenly on PDMS surfaces. Solvent evaporation leaves a uniform deposition and patterning of CNTs on PDMS surfaces. We studied the effect of the CNT concentration and micropillar gap size on CNT coating uniformity, film conductivity, and piezoresistivity. Leveraging the piezoresistivity of deposited CNT films, we further designed and characterized a device for the contraction force measurement. Our capillary assisted deposition method of CNT films showed great application potential in fabrication of flexible CNT thin films for strain sensing.

  10. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  11. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  12. Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Oden L. [Iowa State Univ., Ames, IA (United States)

    1993-07-01

    This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1x1) and (1x2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

  13. High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C/Fe Trilayer Thin Films

    Directory of Open Access Journals (Sweden)

    Anabil Gayen

    2013-01-01

    Full Text Available We report the investigation of temperature dependent magnetic properties of FePt and FePt(30/M(Cu,C/Fe(5 trilayer thin films prepared by using magnetron sputtering technique at ambient temperature and postannealed at different temperatures. L10 ordering, hard magnetic properties, and thermal stability of FePt films are improved with increasing postannealing temperature. In FePt/M/Fe trilayer, the formation of interlayer exchange coupling between magnetic layers depends on interlayer materials and interface morphology. In FePt/C/Fe trilayer, when the C interlayer thickness was about 0.5 nm, a strong interlayer exchange coupling between hard and soft layers was achieved, and saturation magnetization was enhanced considerably after using interlayer exchange coupling with Fe. In addition, incoherent magnetization reversal process observed in FePt/Fe films changes into coherent switching process in FePt/C/Fe films giving rise to a single hysteresis loop. High temperature magnetic studies up to 573 K reveal that the effective reduction in the coercivity decreases largely from 34 Oe/K for FePt/Fe film to 13 Oe/K for FePt/C(0.5/Fe film demonstrating that the interlayer exchange coupling seems to be a promising approach to improve the stability of hard magnetic properties at high temperatures, which is suitable for high-performance magnets and thermally assisted magnetic recording media.

  14. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  15. Sputter deposition on gas diffusion electrodes of Pt-Au nanoclusters for methanol oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Giorgi, L.; Giorgi, R.; Gagliardi, S.; Serra, E. [ENEA Casaccia Research Center, Rome (Italy). Physics Technologies and New Materials; Alvisi, M.; Signore, M.A. [ENEA Brindisi Research Center, Brindisi (Italy). Physics Technologies and New Materials

    2008-07-01

    Polymer electrolyte fuel cells (PEFCs) are suited for use in commercial electrical vehicle and electric power applications. The gas diffusion electrodes of PEFCs are catalyzed by the deposition of platinum (Pt) nanoparticles on carbon powder. The particles must be localized on the electrode surface in order to achieve high electrocatalyst utilization. This study discussed a method of preparing PEFC electrodes using sputter deposition of a Pt-gold (Au) alloy nanoparticles on carbon powders. The method was designed to improve electrode performance and catalyst utilization. The nano-sized alloy clusters were deposited on a gas diffusion electrode at room temperature. The deposits were then characterized using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) in order to examine the effect of the deposition technique on the nano-morphology and electrocatalytic performance of the electrode. Results of the study showed that the technique can be used in the large-scale manufacture of fuel cell electrodes. 3 refs., 1 fig.

  16. Raman spectra of amorphous silicon thin films deposited by glow discharge

    International Nuclear Information System (INIS)

    Bustarret, E.; Alvarez, F.; Brenzikofer, R.; Vilche Pena, A.; Chambouleyron, I.

    1983-01-01

    The local disorder present in films of a-Si:H and a-Si sub(x) N 1 - sub(x):H has been studied through first order Raman spectroscopy, using the 5145A line of an Argon laser in a backscattering geometry at room temperature. This allowed us to compare thin films deposited in two different reactors where the capacitively coupled glow-discharge was produced either in a 'cross field' or a 'parallel field' geometry. Gaseous mixtures of SiH 4 , N 2 , He and Ar have been used in both cases. The systematic variation of the preparation parameters leads to a whole class of 'alloys' including partially micro-crystallized films. (Author) [pt

  17. RAMAN spectra of amorphous silicon thin films deposited by glow discharges

    International Nuclear Information System (INIS)

    Bustarret, E.; Alvarez, F.; Brenzikofer, R.; Vilche Pena, A.; Chambouleyron, I.

    1983-01-01

    The local disorder present in films of a-Si:H and a-Si x N 1-x :H has been studied through first order Raman spectroscopy, using the 5145A line of an Argon laser in a backscattering geometry at room temperature. This allowed us to compare thin films deposited in two different reactors where the capacitively coupled glow-discharge was produced either in a ''cross field'' or a ''parallel field'' geometry. Gaseous mixtures of SiH 4 . N 2 , He and Ar have been used in both cases. The systematic variation of the preparation parameters leads to a whole class of ''alloys'' including partially micro-crysttalized films. (author) [pt

  18. Work function mediated by deposition of ultrathin polar FeO on Pt(111)

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Shuangzan; Qin, Zhihui; Guo, Qinmin; Cao, Gengyu, E-mail: gycao@wipm.ac.cn

    2017-01-15

    Highlights: • Growth of FeO layers on Pt(111) is found to consecutively reduce the work function of the system. • The electrostatic compression effect and the structural relaxation make major contributions to the reductions. • Significant rectifying effect observed in the FeO layer is induced by band alignment shift as work function changing. - Abstract: Significant work function changes from bare Pt(111) surface to 1 monolayer and 2 monolayers of ultrathin iron oxide (FeO) films on it are investigated by means of scanning tunneling microscopy/spectroscopy (STM/STS). With FeO layer-by-layer growth, a continuous reduction of the work function along with the surface vacuum level (VL) shifting is observed. We found that the compression of the electron spill-out at the metal-oxide interface and the substantial reconstruction of 2 ML FeO film, respectively, make major contributions to the first and the second reductions of the work function. The rectifying effect in FeO films is also observed, which is attributed to the downward shift of band alignment imposed by the total change in surface dipole. Our work shows that the polar oxide films play an important role to adjust surface electronic structures for enhancing device functionality.

  19. Work function mediated by deposition of ultrathin polar FeO on Pt(111)

    International Nuclear Information System (INIS)

    Lu, Shuangzan; Qin, Zhihui; Guo, Qinmin; Cao, Gengyu

    2017-01-01

    Highlights: • Growth of FeO layers on Pt(111) is found to consecutively reduce the work function of the system. • The electrostatic compression effect and the structural relaxation make major contributions to the reductions. • Significant rectifying effect observed in the FeO layer is induced by band alignment shift as work function changing. - Abstract: Significant work function changes from bare Pt(111) surface to 1 monolayer and 2 monolayers of ultrathin iron oxide (FeO) films on it are investigated by means of scanning tunneling microscopy/spectroscopy (STM/STS). With FeO layer-by-layer growth, a continuous reduction of the work function along with the surface vacuum level (VL) shifting is observed. We found that the compression of the electron spill-out at the metal-oxide interface and the substantial reconstruction of 2 ML FeO film, respectively, make major contributions to the first and the second reductions of the work function. The rectifying effect in FeO films is also observed, which is attributed to the downward shift of band alignment imposed by the total change in surface dipole. Our work shows that the polar oxide films play an important role to adjust surface electronic structures for enhancing device functionality.

  20. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  1. Speeding up nanomagnetic logic by DMI enhanced Pt/Co/Ir films

    Science.gov (United States)

    Ziemys, Grazvydas; Ahrens, Valentin; Mendisch, Simon; Csaba, Gyorgy; Becherer, Markus

    2018-05-01

    We investigated a new type of multilayer film for Nanomagnetic Logic with perpendicular anisotropy (pNML) enhanced by the Dzyaloshinskii-Moriya interaction (DMI). The DMI effect provides an additional energy term and widens the design space for pNML film optimization. In this work we added an Ir layer between Co and Pt to our standard pNML multilayer (ML) film stack - [Co/Pt]x4. Multilayer stacks of films with and w/o Ir were sputtered and patterned to nanowires of 400 nm width by means of focused ion beam lithography (FIB). For comparability of the films they were tuned to show identical anisotropy for multilayer stacks with and w/o Ir. The field-driven domain wall (DW) velocity in the nanowires was measured by using wide-field MOKE microscopy. We found a strong impact of Ir on the DW velocity being up to 2 times higher compared to the standard [Co/Pt]x4 ML films. Moreover, the maximum velocity is reached at much lower magnetic field, which is beneficial for pNML operation. These results pave the way for pNML with higher clocking rates and at the same time allow a further reduce power consumption.

  2. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  3. Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

    Science.gov (United States)

    Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

    1998-01-01

    Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

  4. Tip-Dependent Scanning Tunneling Microscopy Imaging of Ultrathin FeO Films on Pt(111)

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Grabow, Lars C.; Peng, Guowen

    2011-01-01

    High-resolution scanning tunneling microscope (STM) images of moiré-structured FeO films on Pt(111) were obtained in a number of different tip-dependent imaging modes. For the first time, the STM images are distinguished and interpreted unambiguously with the help of distinct oxygen...

  5. Energy barriers in nanometer sized magnetic islands prepared from alloyed and multilayered Co/Pt films

    NARCIS (Netherlands)

    Abelmann, Leon; de Vries, Jeroen; Bolhuis, Thijs; Kikuchi, Nobuaki

    2014-01-01

    By means of Anomalous Hall Effect measurements, we investigated the thermal switching field distribution of individual magnetic thin film circular elements with out-of-plane easy axis in a temperature range from 10K to 300K. We compared this behavior for elements prepared from either Co80Pt20

  6. PMN-PT-PZT composite films for high frequency ultrasonic transducer applications.

    Science.gov (United States)

    Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk

    2012-06-01

    We have successfully fabricated x (0.65PMN-0.35PT)-(1 - x )PZT ( x PMN-PT-(1 - x )PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol-gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of x PMN-PT-(1 - x )PZT films show better ferroelectric properties. A representative 0.9PMN-PT-0.1PZT thick film transducer is built. It has 200 MHz center frequency with a -6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.

  7. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  8. Nanocomposite film prepared by depositing xylan on cellulose nanowhiskers matrix

    Science.gov (United States)

    Qining Sun; Anurag Mandalika; Thomas Elder; Sandeep S. Nair; Xianzhi Meng; Fang Huang; Art J. Ragauskas

    2014-01-01

    Novel bionanocomposite films have been prepared by depositing xylan onto cellulose nanowhiskers through a pH adjustment. Analysis of strength properties, water vapour transmission, transparency, surface morphology and thermal decomposition showed the enhancement of film performance. This provides a new green route to the utilization of biomass for sustainable...

  9. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  10. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

    Science.gov (United States)

    Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

    2009-01-01

    The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

  11. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

    International Nuclear Information System (INIS)

    Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

    2009-01-01

    The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

  12. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Gedelian, Cynthia A.; Rajanna, K.C.; Premerlani, Brian; Lu, Toh-Ming

    2014-01-01

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  13. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  14. Methanol Adsorption and Reaction on Samaria Thin Films on Pt(111

    Directory of Open Access Journals (Sweden)

    Jin-Hao Jhang

    2015-09-01

    Full Text Available We investigated the adsorption and reaction of methanol on continuous and discontinuous films of samarium oxide (SmOx grown on Pt(111 in ultrahigh vacuum. The methanol decomposition was studied by temperature programmed desorption (TPD and infrared reflection absorption spectroscopy (IRRAS, while structural changes of the oxide surface were monitored by low-energy electron diffraction (LEED. Methanol dehydrogenates to adsorbed methoxy species on both the continuous and discontinuous SmOx films, eventually leading to the desorption of CO and H2 which desorbs at temperatures in the range 400–600 K. Small quantities of CO2 are also detected mainly on as-prepared Sm2O3 thin films, but the production of CO2 is limited during repeated TPD runs. The discontinuous film exhibits the highest reactivity compared to the continuous film and the Pt(111 substrate. The reactivity of methanol on reduced and reoxidized films was also investigated, revealing how SmOx structures influence the chemical behavior. Over repeated TPD experiments, a SmOx structural/chemical equilibrium condition is found which can be approached either from oxidized or reduced films. We also observed hydrogen absence in TPD which indicates that hydrogen is stored either in SmOx films or as OH groups on the SmOx surfaces.

  15. Synthesis and characterization of PtRu/C catalysts obtained by colloidal and deposition methods for fuel cell applications

    Directory of Open Access Journals (Sweden)

    Egberto Gomes Franco

    2005-06-01

    Full Text Available The purpose of this investigation was to compare catalysts produced by the Bönnemann - colloidal method (PtRu (B1 and PtRu (B2, and those produced by the spontaneous deposition method (PtRu (SD. The catalysts produced by both methods had good electrochemical behavior for methanol oxidation for proton exchange membrane fuel cell applications. The structure of the catalyst was examined by transmission electron microscopy (TEM. Energy dispersive spectroscopic analysis (EDS was used to determine the semi-quantitative composition of the catalysts, and the electrochemical behavior was determined by cyclic voltammetry (CV. The diffractograms of the binary catalysts revealed platinum and ruthenium as the only crystalline phases, as per ICDD data base. The PtRu (B1 catalyst, treated in a reducing atmosphere, has the same structure as PtRu (B2, treated in an oxidising/reducing atmosphere, except that the crystallite size was around 1.7 nm for PtRu (B1 instead of 9.9 nm for PtRu (B2. The catalysts PtRu (B2 and PtRu (SD showed similar cyclic voltammetric behavior, which was better than that of PtRu (B1. Both methods are suitable for the production of electrocatalysts for fuel cell applications. The colloidal method is more expensive than the deposition method, but the former permits the production of ternary and quaternary catalyst systems with enhanced CO tolerance.

  16. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    Energy Technology Data Exchange (ETDEWEB)

    Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

    2014-02-28

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

  17. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    International Nuclear Information System (INIS)

    Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

    2014-01-01

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

  18. Methods to synthesize NiPt bimetallic nanoparticles by a reversed-phase microemulsion, deposition of NiPt bimetallic nanoparticles on a support, and application of the supported catalyst for CO.sub.2 reforming of methane

    KAUST Repository

    Biausque, Gregory; Laveille, Paco; Anjum, Dalaver H.; Caps, Valerie; Basset, Jean-Marie

    2015-01-01

    Methods to synthesize NiPt bimetallic nanoparticles by a reversed-phase microemulsion, deposition of NiPt bimetallic nanoparticles on a support, and application of the supported catalyst for CO.sub.2 reforming of methane

  19. Methods to synthesize NiPt bimetallic nanoparticles by a reversed-phase microemulsion, deposition of NiPt bimetallic nanoparticles on a support, and application of the supported catalyst for CO.sub.2 reforming of methane

    KAUST Repository

    Biausque, Gregory

    2015-04-28

    Methods to synthesize NiPt bimetallic nanoparticles by a reversed-phase microemulsion, deposition of NiPt bimetallic nanoparticles on a support, and application of the supported catalyst for CO.sub.2 reforming of methane

  20. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  1. Co-deposition of Pt and ceria anode catalyst in supercritical carbon dioxide for direct methanol fuel cell applications

    International Nuclear Information System (INIS)

    You, Eunyoung; Guzmán-Blas, Rolando; Nicolau, Eduardo; Aulice Scibioh, M.; Karanikas, Christos F.; Watkins, James J.; Cabrera, Carlos R.

    2012-01-01

    Pt and mixed Pt-ceria catalysts were deposited onto gas diffusion layers using supercritical fluid deposition (SFD) to fabricate thin layer electrodes for direct methanol fuel cells. Dimethyl (1,5-cyclooctadiene) platinum (II) (CODPtMe 2 ) and tetrakis (2,2,6,6-tetramethyl 3,5-heptanedionato) cerium (IV) (Ce(tmhd) 4 ) were used as precursors. Hydrogen-assisted Pt deposition was performed in compressed carbon dioxide at 60 °C and 17.2 MPa to yield high purity Pt on carbon-black based gas diffusion layers. During the preparation of the mixed Pt-ceria catalyst, hydrogen reduction of CODPtMe 2 to yield Pt catalyzed the deposition of ceria from Ce(tmhd) 4 enabling co-deposition at 150 °C. The catalyst layers were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscope-energy dispersive spectral (SEM-EDS) analyses. Their electrochemical performance toward methanol oxidation was examined in half cell mode using a three electrode assembly as well as in fuel cell mode. The thin layer electrodes formed via SFD exhibited higher performance in fuel cell operations compared to those prepared by the conventional brush-paint method. Furthermore, the Pt-ceria catalyst with an optimized composition exhibited greater methanol oxidation activity than pure platinum.

  2. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  3. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  4. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

  5. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  6. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  7. Laser-assisted deposition of thin C60 films

    DEFF Research Database (Denmark)

    Schou, Jørgen; Canulescu, Stela; Fæster, Søren

    Metal and metal oxide films with controlled thickness from a fraction of a monolayer up more than 1000 nm and known stoichiometry can be produced by pulsed laser deposition (PLD) relatively easily, and (PLD) is now a standard technique in all major research laboratories within materials science...... of the matrix material, anisole, with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. High-resolution SEM images of MAPLE deposited films reveal large circular features on the surface...

  8. Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

    International Nuclear Information System (INIS)

    Tseng, T.-K.; Wu, J.-M.

    2005-01-01

    Conductive perovskite BaPbO 3 (BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO 2 /Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 deg. C, the BPO films contain a high content of BaCO 3 phase after annealing at temperatures higher than 500 deg. C. If the baking temperature is chosen lower than 300 deg. C, such as 200 deg. C, the annealed BPO films consist mostly of perovskite with only traces of BaCO 3 . Choosing 200 deg. C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 deg. C. The perovskite BPO phase is stable in the range of 550-650 deg. C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films

  9. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  10. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  11. Deposit of thin films for Tokamaks conditioning

    International Nuclear Information System (INIS)

    Valencia A, R.

    2006-01-01

    discharge plasma, created in a calibrated mixture of methane-hydrogen during the hydrogenated amorphous carbon film deposit on the vessel wall of Novillo tokamak, were determined by mass spectrometry. By way of measuring the emission lines of the carbon and oxygen impurities in intense discharges, the time required by the plasma to interact with the wall was estimated. In addition to it, the temporal conduct of the emission line intensity of these impurities was observed by means of an intensified CCD detector. Once an ∼ 10 % of helium was introduced in the operating gas of the tokamak discharges, a 25-42 eV time variation of the electron temperature was measured using the intensity ratio technique. (Author)

  12. Gas Sensing Properties of Metal Doped WO3 Thin Film Sensors Prepared by Pulsed Laser Deposition and DC Sputtering Process

    Science.gov (United States)

    Bhuiyan, Md. Mosharraf Hossain; Ueda, Tsuyoshi; Ikegami, Tomoaki; Ebihara, Kenji

    2006-10-01

    Tungsten trioxide (WO3) thin films gas sensors were prepared by the KrF excimer pulsed laser deposition (PLD) method. The films were prepared on the quartz glass, silicon and also on the Al2O3 sensor substrates with platinum interdigitated electrodes. The effect of doping of the platinum (Pt), palladium (Pd) or gold (Au) on the WO3 thin film was also investigated. These metals were doped to the WO3 thin film by the DC sputtering process during the PLD. The substrate temperature and the oxygen pressure were 400 °C and 100 mTorr, respectively, during the deposition. The films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). The sensitivity of the prepared sensors to 60 ppm NO gas was examined using the two terminal resistance method in a chamber at atmospheric pressure and operating temperatures of 25-350 °C. The sensitivity of the WO3 thin films doped with Pt, Pd, or Au was found to be higher than that of the undoped WO3 thin film.

  13. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Carlier, Thibault [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Saitzek, Sébastien [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Méar, François O., E-mail: francois.mear@univ-lille1.fr [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France); Blach, Jean-François; Ferri, Anthony [Univ. Artois, CNRS, Centrale Lille, ENSCL, Univ. Lille, UMR 8181, Unité de Catalyse et de Chimie du Solide (UCCS), F-62300 Lens (France); Huvé, Marielle; Montagne, Lionel [Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181 – UCCS – Unité de Catalyse et Chimie du Solide, F-59000 Lille (France)

    2017-03-01

    Highlights: • Successfully deposition of a glassy thin film by PLD. • A good homogeneity and stoichiometry of the coating. • Influence of the deposition temperature on the glassy thin-film structure. - Abstract: In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  14. Plasma deposition of polymer composite films incorporating nanocellulose whiskers

    Science.gov (United States)

    Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

    2011-11-01

    In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

  15. Aerosol deposition of (Cu,Ti) substituted bismuth vanadate films

    Energy Technology Data Exchange (ETDEWEB)

    Exner, Jörg, E-mail: Functional.Materials@Uni-Bayreuth.de [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany); Fuierer, Paul [Materials and Metallurgical Engineering Department, New Mexico Institute of Mining and Technology, Socorro, NM 87801 (United States); Moos, Ralf [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany)

    2014-12-31

    Bismuth vanadate, Bi{sub 4}V{sub 2}O{sub 11}, and related compounds with various metal (Me) substitutions, Bi{sub 4}(Me{sub x}V{sub 1−x}){sub 2}O{sub 11−δ}, show some of the highest ionic conductivities among the known solid oxide electrolytes. Films of Cu and Ti substituted bismuth vanadate were prepared by an aerosol deposition method, a spray coating process also described as room temperature impact consolidation. Resultant films, several microns in thickness, were dense with good adhesion to the substrate. Scanning electron microscopy and high temperature X-ray diffraction were used to monitor the effects of temperature on the structure and microstructure of the film. The particle size remained nano-scale while microstrain decreased rapidly up to 500 °C, above which coarsening and texturing increased rapidly. Impedance measurements of films deposited on inter-digital electrodes revealed an annealing effect on the ionic conductivity, with the conductivity exceeding that of a screen printed film, and approaching that of bulk ceramic. - Highlights: • Cu and Ti doped bismuth vanadate films were prepared by aerosol deposition (AD). • Dense 3–5 μm thick films were deposited on alumina, silicon and gold electrodes. • Annealing of the AD-layer increases the conductivity by 1.5 orders of magnitude. • Effect of temperature on structure and microstructure was investigated.

  16. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  17. Platinum/titanium bilayer deposited on polymer film as efficient counter electrodes for plastic dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Ikegami, M.; Miyoshi, K.; Miyasaka, T.; Teshima, K.; Wei, T. C.; Wan, C. C.; Wang, Y. Y.

    2007-01-01

    A surface-rich platinum/titanium bilayer was deposited on poly(ethylene naphthalate) film by vacuum sputtering as counterelectrode for plastic dye-sensitized solar cells (DSSCs). Compared to the electrodes made of pure Pt layer, this electrode maintained similar electrochemical catalytic effect at relative low Pt usage. Current-voltage characteristics of the plastic DSSC at this stage stand at 0.69 V on V OC , 9.97 mA/cm 2 on I SC , 0.69 on fill factor, and 4.31% cell efficiency under AM1.5, 100 mW/cm 2 illumination

  18. Effects of surface deposition and droplet injection on film cooling

    International Nuclear Information System (INIS)

    Wang, Jin; Cui, Pei; Vujanović, Milan; Baleta, Jakov; Duić, Neven; Guzović, Zvonimir

    2016-01-01

    Highlights: • Cooling effectiveness is significantly affected by the deposition size. • Coverage area for model without mist is reduced by increasing the deposition height. • Wall temperature is decreased by 15% with 2% mist injection. • Cooling coverage is increased by more than three times with 2% mist injection. • Cooling effectiveness for mist models is improved by increasing deposition height. - Abstract: In the present research, the influence of the particle dispersion onto the continuous phase in film cooling application was analysed by means of numerical simulations. The interaction between the water droplets and the main stream plays an important role in the results. The prediction of two-phase flow is investigated by employing the discrete phase model (DPM). The results present heat transfer characteristics in the near-wall region under the influence of mist cooling. The local wall temperature distribution and film cooling effectiveness are obtained, and results show that the film cooling characteristics on the downstream wall are affected by different height of surface deposits. It is also found that smaller deposits without mist injection provide a lower wall temperature and a better cooling performance. With 2% mist injection, evaporation of water droplets improves film cooling effectiveness, and higher deposits cause lateral and downstream spread of water droplets. The results indicate that mist injection can significantly enhance film cooling performance.

  19. UV laser deposition of metal films by photogenerated free radicals

    Science.gov (United States)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  20. Magnetic properties and inhomogeneous phase transition in (Fe sub x Co sub 0 sub . sub 5 sub - sub x)Pt sub 0 sub . sub 5 films

    CERN Document Server

    Jang, P W; Na, J G; Lee, S R

    1999-01-01

    (Fe sub x Co sub 0 sub . sub 5 sub - sub x)Pt sub 0 sub . sub 5 ternary thin films were deposited on glass substrates by using a dc sputtering method at room temperature and were subsequently annealed at 700 .deg. C in a high vacuum. A high degree of the (111) preferred orientation could be obtained in all the as-deposited films and was not destroyed, even though post annealing. The CoPt and the FePt binary alloys were completely mixed and had a L1 sub o -type ordered structure, as confirmed by single (222) peaks and by the linear variation of the lattice constant a sub o. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes. The lattice parameter a sub o varied linearly with the Fe content while the coercivity showed a minimum value at the equiatomic composition of the Fe and the Co atoms.

  1. Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation

    International Nuclear Information System (INIS)

    Mackus, Adriaan J M; Weber, Matthieu J; Thissen, Nick F W; Garcia-Alonso, Diana; Vervuurt, René H J; Assali, Simone; Bol, Ageeth A; Verheijen, Marcel A; Kessels, Wilhelmus M M

    2016-01-01

    The deposition of Pd and Pt nanoparticles by atomic layer deposition (ALD) has been studied extensively in recent years for the synthesis of nanoparticles for catalysis. For these applications, it is essential to synthesize nanoparticles with well-defined sizes and a high density on large-surface-area supports. Although the potential of ALD for synthesizing active nanocatalysts for various chemical reactions has been demonstrated, insight into how to control the nanoparticle properties (i.e. size, composition) by choosing suitable processing conditions is lacking. Furthermore, there is little understanding of the reaction mechanisms during the nucleation stage of metal ALD. In this work, nanoparticles synthesized with four different ALD processes (two for Pd and two for Pt) were extensively studied by transmission electron spectroscopy. Using these datasets as a starting point, the growth characteristics and reaction mechanisms of Pd and Pt ALD relevant for the synthesis of nanoparticles are discussed. The results reveal that ALD allows for the preparation of particles with control of the particle size, although it is also shown that the particle size distribution is strongly dependent on the processing conditions. Moreover, this paper discusses the opportunities and limitations of the use of ALD in the synthesis of nanocatalysts. (paper)

  2. Chromium carbide thin films deposited by ultra-short pulse laser deposition

    International Nuclear Information System (INIS)

    Teghil, R.; Santagata, A.; De Bonis, A.; Galasso, A.; Villani, P.

    2009-01-01

    Pulsed laser deposition performed by a laser with a pulse duration of 250 fs has been used to deposit films from a Cr 3 C 2 target. Due to the different processes involved in the laser ablation when it is performed by an ultra-short pulse source instead of a conventional short pulse one, it has been possible to obtain in vacuum films containing only one type of carbide, Cr 3 C 2 , as shown by X-ray photoelectron spectroscopy. On the other hand, Cr 3 C 2 is not the only component of the films, since a large amount of amorphous carbon is also present. The films, deposited at room temperature, are amorphous and seem to be formed by the coalescence of a large number of particles with nanometric size. The film composition can be explained in terms of thermal evaporation from particles ejected from the target.

  3. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  4. Heat treatment of cathodic arc deposited amorphous hard carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S.; Ager, J.W. III; Brown, I.G. [and others

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  5. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  6. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  7. Organometallic Pt precursor on graphite substrate: deposition from SC CO2, reduction and morphology transformation as revealed by SFM

    International Nuclear Information System (INIS)

    Elmanovich, Igor V.; Naumkin, Alexander V.; Gallyamov, Marat O.; Khokhlov, Alexei R.

    2012-01-01

    Organometallic Pt precursor was deposited on model highly oriented pyrolytic graphite substrate from solutions in supercritical carbon dioxide. Morphology transformations during reduction process including real-time observations were studied by scanning force microscopy (SFM). We confirmed that SC CO 2 is a promising mediator in deposition process even for rather hydrophobic supports. SFM data show that thermal decomposition of the PtMe 2 (COD) precursor with subsequent hydrogen post-treatment allows one to obtain rather pure and well-defined Pt nanoparticles with average height above a substrate level of 4.5 ± 0.6 nm.

  8. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-09

    Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

  9. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  10. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

    Directory of Open Access Journals (Sweden)

    Kaupo Kukli

    2017-02-01

    Full Text Available Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.

  11. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Administrator

    3. Mobility activation in CdSe thin films. The trap depths were calculated by using the following simple decay law. It = Ioexp(–pt),. (1) where p is the probability of escape of an electron from the trap per second and is given by (Randall and Wilkins 1945) p = S exp (–E/kT),. (2) where E is the trap depth for electrons below the ...

  12. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    NARCIS (Netherlands)

    Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

  13. Pulsed laser deposition of ITO thin films and their characteristics

    International Nuclear Information System (INIS)

    Zuev, D. A.; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D.; Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M.

    2012-01-01

    The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10 −4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.

  14. Room temperature deposition of magnetite thin films on organic substrate

    International Nuclear Information System (INIS)

    Arisi, E.; Bergenti, I.; Cavallini, M.; Murgia, M.; Riminucci, A.; Ruani, G.; Dediu, V.

    2007-01-01

    We report on the growth of magnetite films directly on thin layers of organic semiconductors by means of an electron beam ablation method. The deposition was performed at room temperature in a reactive plasma atmosphere. Thin films show ferromagnetic (FM) hysteresis loops and coercive fields of hundreds of Oersted. Micro Raman analysis indicates no presence of spurious phases. The morphology of the magnetite film is strongly influenced by the morphology of the underlayer of the organic semiconductor. These results open the way for the application of magnetite thin films in the field of organic spintronics

  15. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  16. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

  17. Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

    International Nuclear Information System (INIS)

    Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

    2003-01-01

    We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

  18. Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

    2001-01-01

    Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

  19. Perpendicular magnetic anisotropy of non-epitaxial hexagonal Co{sub 50}Pt{sub 50} thin films prepared at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, F.T., E-mail: ftyuan@gmail.com [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 22101, Taiwan (China); Chang, H.W., E-mail: wei0208@gmail.com [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Lee, P.Y.; Chang, C.Y. [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Chi, C.C. [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2015-04-15

    Highlights: • In this paper, we propose a non-epitaxially grown PMA thin film of disorder hexagonal Co{sub 50}Pt{sub 50} which can satisfy all the requirements at once. • Although the preparation temperature is at room temperature and no post annealing is required, the film also shows good thermal stability up to 400 °C. • Moreover, the easy-controlling single layer deposition process of the film largely enhances the feasibility of practical production. • Significant PMA is achieved in a wide range of film thickness from 2 nm to 20 nm, which expands the usage form a GMR or TMR magnetic junctions to perpendicular spin polarizer for spin current related engineering. • The presented results may open new opportunities for advanced spintronic devices. - Abstract: Non-epitaxially induced perpendicular magnetic anisotropy (PMA) of Co{sub 50}Pt{sub 50} thin films at room temperature (RT) is reported. The CoPt film having a disordered hcp structure shows a magnetocrystalline anisotropy (K{sub u}{sup RT}) of 1–2 × 10{sup 6} erg/cm{sup 3} in a wide range of layer thickness from 2 to 20 nm. K{sub u}{sup RT} of about 1 × 10{sup 6} erg/cm{sup 3} can be preserved after a 400 °C-thermal cycle in the 5-nm-thick sample. Moderate PMA, large thickness range, simple preparation process, low formation temperature but good thermal stability make presented hcp CoPt become a remarkable option for advanced spintronic devices.

  20. Visible light active TiO2 films prepared by electron beam deposition of noble metals

    International Nuclear Information System (INIS)

    Hou Xinggang; Ma Jun; Liu Andong; Li Dejun; Huang Meidong; Deng Xiangyun

    2010-01-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  1. CdS films deposited by chemical bath under rotation

    International Nuclear Information System (INIS)

    Oliva-Aviles, A.I.; Patino, R.; Oliva, A.I.

    2010-01-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl 2 , KOH, NH 4 NO 3 and CS(NH 2 ) 2 as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  2. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  3. Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

    Directory of Open Access Journals (Sweden)

    Nobuto Oka

    2015-10-01

    Full Text Available A process based on reactive gas flow sputtering (GFS for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO.

  4. Plasma deposited fluorinated films on porous membranes

    Energy Technology Data Exchange (ETDEWEB)

    Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

    2015-02-01

    75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

  5. High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

    Science.gov (United States)

    Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

    2018-05-01

    This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

  6. Influence of multiple reflection and optical interference on the magneto-optical properties of Co-Pt alloy films investigated by using the characteristic matrix method

    International Nuclear Information System (INIS)

    Zou, Z. Q.; Lee, Y. P.; Kim, K. W.

    2000-01-01

    The magneto-optical Kerr effect (MOKE) of a multilayered system was described by using the characteristic matrix method based on the electromagnetic wave theory. In addition to the multiple reflection and the optical interference, a contribution from the plasma resonance absorption of a metallic layer can be included in the formulation. As an example, we carried out a simulation of the MOKE for Co 0.25 Pt 0.75 alloy films with and without a Pt buffer layer. It was found that the Kerr rotation and the read-out figure of merit of a film directly deposited on a glass substrate were enhanced at a thickness below 40 nm owing to the multiple reflection and the optical interference. This enhancement was more remakable at long wavelengths when light was incident on the substrate side. However, the introduction of a Pt buffer layer was not beneficial in improving the Kerr rotation and the figure of merit, although it promoted the perpendicular magnetic anisotropy of the film, as reported. The simulated results for an alloy thickness beyond the penetration depth of light agreed well with the experimental data for a prepared 'thick' alloy film

  7. Study of underpotential deposited Cu layers on Pt(111) and their stability against CO and CO2 in perchloric acid

    DEFF Research Database (Denmark)

    Schlaup, Christian Georg; Horch, Sebastian

    2013-01-01

    The underpotential deposition (UPD) of copper on a Pt(111) electrode and the influence of gas coadsorbates, i.e. CO and CO2, on the thus deposited copper layer were studied in a 0.1 M HClO4 electrolyte by means of EC-STM. By UPD, an atomically flat Cu layer is formed, which exhibits a pseudomorph...

  8. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Baldovino, Silvia; Fanciulli, Marco [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios [MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10 (Greece)

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  9. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  10. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  11. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    International Nuclear Information System (INIS)

    Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

    2005-01-01

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

  12. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  13. Supramolecular structure of a perylene derivative in thin films deposited by physical vapor deposition

    International Nuclear Information System (INIS)

    Fernandes, Jose D.; Aoki, Pedro H.B.; Constantino, Carlos J.J.; Junior, Wagner D.M.; Teixeira, Silvio R.

    2014-01-01

    Full text: Thin films of a perylene derivative, the bis butylimido perylene (BuPTCD), were produced using thermal evaporation (PVD, physical vapor deposition). The main objective is to investigate the supramolecular structure of the BuPTCD in these PVD films, which implies to control the thickness and to determine the molecular organization, morphology at micro and nanometer scales and crystallinity. This supramolecular structure is a key factor in the optical and electrical properties of the film. The ultraviolet-visible absorption revealed an uniform growth of the PVD films. The optical and atomic force microscopy images showed a homogeneous surface of the film at micro and nanometer scales. A preferential orientation of the molecules in the PVD films was determined via infrared absorption. The X-ray diffraction showed that both powder and PVD film are in the crystalline form. (author)

  14. Atomic Layer Deposition of Pt Nanoparticles within the Cages of MIL-101: A Mild and Recyclable Hydrogenation Catalyst

    Directory of Open Access Journals (Sweden)

    Karen Leus

    2016-03-01

    Full Text Available We present the in situ synthesis of Pt nanoparticles within MIL-101-Cr (MIL = Materials Institute Lavoisier by means of atomic layer deposition (ALD. The obtained Pt@MIL-101 materials were characterized by means of N2 adsorption and X-ray powder diffraction (XRPD measurements, showing that the structure of the metal organic framework was well preserved during the ALD deposition. X-ray fluorescence (XRF and transmission electron microscopy (TEM analysis confirmed the deposition of highly dispersed Pt nanoparticles with sizes determined by the MIL-101-Cr pore sizes and with an increased Pt loading for an increasing number of ALD cycles. The Pt@MIL-101 material was examined as catalyst in the hydrogenation of different linear and cyclic olefins at room temperature, showing full conversion for each substrate. Moreover, even under solvent free conditions, full conversion of the substrate was observed. A high concentration test has been performed showing that the Pt@MIL-101 is stable for a long reaction time without loss of activity, crystallinity and with very low Pt leaching.

  15. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  16. (0 0 1) textured CoPt-Ag nanocomposite films for high-density perpendicular magnetic recording

    International Nuclear Information System (INIS)

    Xue, S.X.; Wang, H.; Wang, H.B.; Yang, F.J.; Wang, J.A.; Cao, X.; Gao, Y.; Huang, Z.B.; Li, Z.Y.; Li, Q.; Wong, S.P.

    2006-01-01

    CoPt/Ag nanocomposite films were prepared by magnetron sputtering. The dependence of texture and magnetic properties on film thickness, Ag atomic fraction and annealing conditions is investigated. Films with a thickness about 20 nm are easy to form with (0 0 1) orientation. The existence of the Ag in the film plays a dominant role in inducing the (0 0 1) texture of the film and suppressing the growth of the CoPt grains during annealing. The Co 35 Pt 38 Ag 27 film after annealing at 600 deg. C exhibits a large perpendicular coercivity of 5.6 kOe and a squareness of 0.90 with a small average grains size of 12.5 nm

  17. Electrochemical deposition of the first Cd monolayer on polycrystalline Pt and Au electrodes: an Upd study

    Directory of Open Access Journals (Sweden)

    Santos Mauro C. dos

    1998-01-01

    Full Text Available The underpotential deposition of Cd on polycrystalline Pt and Au was studied by voltammetry at stationary and rotating ring-disc electrodes. On Pt, the Cd ads dissolution peaks overlap those related to the oxidation of Hads, thus hindering the precise evaluation of desorption charges. A model proposed to calculate such charges from voltammetry at stationary electrodes revealed a value of 285 muC cm-2 for the monolayer dissolution, which corresponds to a coverage of 90% with Cd ads presenting an electrosorption valence of 0.5. Rotating ring-disc experiments fully confirmed such values. The misfit between atomic radii of Cd and Pt justifies the less-than-100% coverage. On the other hand, on Au, the absence of Hads simplifies the procedure for determination of dissolution charges for the Cd monolayer. Here, a value of only 41 muC cm-2 was calculated, which corresponds to a maximum coverage of 15%, with the electrosorption valence of 0.5. The results obtained in the collecting experiments with the rotating electrode are in complete agreement with those values.

  18. Cracking and delamination of vapor-deposited tantalum films

    International Nuclear Information System (INIS)

    Fisher, R.M.; Duan, J.Z.; Liu, J.B.

    1990-01-01

    This paper reports on tantalum films which begin to crack and spall during vapor deposition on glass at a thickness of 180 nm. Islands and ribbons, 10 - 30 μm in size, delaminate by crack growth along the Ta/glass interface for several μm after which the crack penetrates into the glass to a depth of 0.5 - 1 μm and complete spalling occurs. X-ray diffraction showed that about 50% of the original bct, β-tantalum, phase had transformed to the bcc α-Ta phase. When Ta was deposited on glass that was first covered with 52 nm of copper, spalling was observed to begin at a thickness of 105 nm. In this case, the film first cracks and then peels along the Cu/glass interface and curls into scrolls indicating the presence of a small stress gradient. X-ray diffraction of the as-deposited film, and electron diffraction of ion-milled flakes, showed that the Ta films deposited on Cu-coated glass almost completely transform to bcc α-Ta. The critical thickness for delamination along the Cu/glass interface is about 1/2 that for cracking in the glass substrate when an intermediate layer of Cu is not present. All of the above findings are in good agreement with previous observations on Cr films

  19. Quality improvement of organic thin films deposited on vibrating substrates

    Energy Technology Data Exchange (ETDEWEB)

    Paredes, Y.A.; Caldas, P.G.; Prioli, R.; Cremona, M., E-mail: cremona@fis.puc-rio.br

    2011-12-30

    Most of the Organic Light-Emitting Diodes (OLEDs) have a multilayered structure composed of functional organic layers sandwiched between two electrodes. Thin films of small molecules are generally deposited by thermal evaporation onto glass or other rigid or flexible substrates. The interface state between two organic layers in OLED device depends on the surface morphology of the layers and affects deeply the OLED performance. The morphology of organic thin films depends mostly on substrate temperature and deposition rate. Generally, the control of the substrate temperature allows improving the quality of the deposited films. For organic compounds substrate temperature cannot be increased too much due to their poor thermal stability. However, studies in inorganic thin films indicate that it is possible to modify the morphology of a film by using substrate vibration without increasing the substrate temperature. In this work, the effect of the resonance vibration of glass and silicon substrates during thermal deposition in high vacuum environment of tris(8-quinolinolate)aluminum(III) (Alq{sub 3}) and N,N Prime -Bis(naphthalene-2-yl)-N,N Prime -bis(phenyl)-benzidine ({beta}-NPB) organic thin films with different deposition rates was investigated. The vibration used was in the range of hundreds of Hz and the substrates were kept at room temperature during the process. The nucleation and subsequent growth of the organic films on the substrates have been studied by atomic force microscopy technique. For Alq{sub 3} and {beta}-NPB films grown with 0.1 nm/s as deposition rate and using a frequency of 100 Hz with oscillation amplitude of some micrometers, the results indicate a reduction of cluster density and a roughness decreasing. Moreover, OLEDs fabricated with organic films deposited under these conditions improved their power efficiency, driven at 4 mA/cm{sup 2}, passing from 0.11 lm/W to 0.24 lm/W with an increase in their luminance of about 352 cd/m{sup 2

  20. Glancing angle deposition of thin films engineering the nanoscale

    CERN Document Server

    Hawkeye, Matthew M; Brett, Michael J

    2014-01-01

    This book provides a highly practical treatment of GLAD technology, gathering existing procedures, methodologies, and experimental designs into a single, cohesive volume which will be useful both as a ready reference for those in the field and as a definitive guide for those entering it. It covers: History and development of GLAD techniquesProperties and Characterization of GLAD fabricated filmsDesign and engineering of optical GLAD films including fabrication and testingPost-deposition processing and integrationDeposition systems for GLAD fabrication Also includes a patent survey of relevant literature and a survey of GLAD's wide range of material properties and diverse applications.

  1. Electrodynamic properties of porous PZT-Pt films at terahertz frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Komandin, Gennady A.; Porodinkov, Oleg E.; Spektor, Igor E.; Volkov, Alexander A. [Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Vorotilov, Konstantin A.; Seregin, Dmitry S.; Sigov, Alexander S. [Moscow Technological University (MIREA), Moscow (Russian Federation)

    2017-01-15

    Electrodynamics of Si-SiO{sub 2}-TiO{sub 2}-Pt-PZT heterostructures is studied in the frequency range from 5 to 5000 cm{sup -1} by monochromatic BWO (backward wave oscillator) and infrared Fourier-transform spectroscopy techniques to derive the dielectric characteristics of the sol-gel porous ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} films. Broad frequency band dielectric response of PZT films with different density is constructed using the oscillator dispersion models. The main contribution to the film permittivity is found to form at frequencies below 100 cm{sup -1} depending strongly and non-linearly on the film medium density. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Fabrication and characterization of vacuum deposited fluorescein thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jalkanen, Pasi, E-mail: pasi.jalkanen@gmail.co [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kulju, Sampo, E-mail: sampo.j.kulju@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Arutyunov, Konstantin, E-mail: konstantin.arutyunov@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Antila, Liisa, E-mail: liisa.j.antila@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Myllyperkioe, Pasi, E-mail: pasi.myllyperkio@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Ihalainen, Teemu, E-mail: teemu.o.ihalainen@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kaeaeriaeinen, Tommi, E-mail: tommi.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Kaeaeriaeinen, Marja-Leena, E-mail: marja-leena.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Korppi-Tommola, Jouko, E-mail: jouko.korppi-tommola@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland)

    2011-03-31

    Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO{sub 2} coating. Surface topology, absorption and emission spectra of the films depend on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially forms islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO{sub 2} is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO{sub 2} is quenched due to the effective electron transfer to the semiconductor conduction band.

  3. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-15

    Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

  4. Novel doped hydroxyapatite thin films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Duta, L.; Oktar, F.N.; Stan, G.E.; Popescu-Pelin, G.; Serban, N.; Luculescu, C.; Mihailescu, I.N.

    2013-01-01

    Highlights: ► HA coatings synthesized by pulsed laser deposition. ► Comparative study of commercial vs. animal origin materials. ► HA coatings of animal origin were rougher and more adherent to substrates. ► Animal origin films can be considered as promising candidates for implant coatings. - Abstract: We report on the synthesis of novel ovine and bovine derived hydroxyapatite thin films on titanium substrates by pulsed laser deposition for a new generation of implants. The calcination treatment applied to produce the hydroxyapatite powders from ovine/bovine bones was intended to induce crystallization and to prohibit the transmission of diseases. The deposited films were characterized by scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive X-ray spectroscopy. Pull-off adherence and profilometry measurements were also carried out. X-ray diffraction ascertained the polycrystalline hydroxyapatite nature of the powders and films. Fourier transform infrared spectroscopy evidenced the vibrational bands characteristic to a hydroxyapatite material slightly carbonated. The micrographs of the films showed a uniform distribution of spheroidal particulates with a mean diameter of ∼2 μm. Pull-off measurements demonstrated excellent bonding strength values between the hydroxyapatite films and the titanium substrates. Because of their physical–chemical properties and low cost fabrication from renewable resources, we think that these new coating materials could be considered as a prospective competitor to synthetic hydroxyapatite used for implantology applications.

  5. Anomalous Nernst Effects of [CoSiB/Pt] Multilayer Films

    OpenAIRE

    Kelekci, O.; Lee, H. N.; Kim, T. W.; Noh, H.

    2013-01-01

    We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to 1/d^1.3, which can be c...

  6. Far-infrared properties of sol-gel derived PbZr0.52Ti0.48O3 thin films on Pt-coated substrates

    International Nuclear Information System (INIS)

    Kafadaryan, E A; Hovsepyan, R K; Khachaturova, A A; Aghamalyan, N R; Shirinyan, G O; Manukyan, A L; Vardanyan, R S; Hayrapetyan, A G; Grigoryan, S G; Vardanyan, E S

    2003-01-01

    Polycrystalline tetragonal PbZr 0.52 Ti 0.48 O 3 (PZT) thin films have been deposited on the nickel and (111) platinum coated (110) sapphire substrates by the sol-gel method. Optical properties of the PZT thin films were studied using far-infrared reflectivity spectroscopy in the 200-10 000 cm -1 frequency range at 300 K. The frequency dependence of the optical characteristics (σ, ε, -Im ε -1 ) of the films were calculated by the Kramers-Kronig transformation of the reflectivity spectra and analysed by the Drude-Lorentz model. The frequency dependence of the optical conductivity, σ(ω), of the PZT films deposited on platinum coated sapphire is well described by the free-carrier term and an overdamped mid-infrared component. Sapphire/Pt/PZT structures reveal semiconductor properties (effective carrier concentration N/m* is up to 10 20 cm -3 , plasma minimum is located near 3000 cm -1 ). This effect can be related to the favourable influence of the platinum electrode on the charge carrier density at Pt/PZT contact and formation of the interfacial conductive layer

  7. Magnetic properties and microstructure study of high coercivity Au/FePt/Au trilayer thin films

    International Nuclear Information System (INIS)

    Chen, S.K.; Yuan, F.T.; Liao, W.M.; Hsu, C.W.; Horng, Lance

    2006-01-01

    High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L1 ordering transformation occurs at 500 deg. C. Coercivity (H c ) is increased with the annealing temperature in the studied range 400-800 deg. C. The H c value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L1 lattice is negligible even after a high-temperature (800 deg. C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix

  8. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  9. Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

    Science.gov (United States)

    Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

    2018-05-01

    The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

  10. Electrochemical and structural characterization of carbon-supported Pt-Pd bimetallic electrocatalysts prepared by electroless deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohashi, Masato; Beard, Kevin D.; Ma Shuguo; Blom, Douglas A.; St-Pierre, Jean; Van Zee, John W. [Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Monnier, John R., E-mail: monnier@cec.sc.ed [Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2010-10-01

    Electrochemical and structural characteristics of various Pt-Pd/C bimetallic catalysts prepared by electroless deposition (ED) methods have been investigated. Structural analysis was conducted by X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy (EDS). Monometallic Pt or Pd particles were not detected by EDS, indicating the ED methodology formed only bimetallic particles. The size of the Pt-Pd bimetallic particles was smaller than those of a commercially available Pt/C catalyst. The morphology of the Pt on Pd/C catalysts was identified and corresponded to Pd particles partially encapsulated by Pt. The electrochemical characteristics of the lowest Pd loading catalyst (7.0% Pt on 0.5% Pd/C) for the oxygen reduction reaction (ORR) have been investigated by the rotating ring disk electrode technique. The electrochemical activity was equal or lower than the commercially available Pt/C catalyst; however, the amount of hydrogen peroxide observed at the ring was reduced by the Pd, suggesting that such a catalyst has the potential to decrease ionomer degradation in applications. The Pt on Pd/C catalysts also show a higher tolerance to ripening induced by potential cycling. Therefore, catalyst suitability cannot be judged solely by its initial performance; information related to specific degradation mechanisms is also needed for a more complete assessment.

  11. Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

    Science.gov (United States)

    Datta, R.; Loukya, B.; Li, N.; Gupta, A.

    2012-04-01

    NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

  12. Thickness dependence of crystallographic and magnetic properties for L10-CoPt thin films

    International Nuclear Information System (INIS)

    Liao, W.M.; Chen, S.K.; Yuan, F.T.; Hsu, C.W.; Lee, H.Y.

    2006-01-01

    Thickness dependence of crystallographic and magnetic properties is investigated from the analyses of the order parameter S, chemically ordered fraction f 0 , and internal stress of the L1 0 Co 49 Pt 51 film. Coercivity H c was increased from 5.1kOe to a maximum value of 13.3kOe as the thickness of the film (δ) was raised from 10nm to 50nm.This is due to the increase of S from 0.30 to 0.64 and the increase of f 0 from 0.52 to 0.75. For thicker samples (δ-bar 50nm), a dramatic drop-off in H c was observed at δ=80nm. The quantity of ordered phase, measured by X-ray diffractometry, is closely related to the H c value of the Co 49 Pt 51 thin film for δ 49 Pt 51 samples is harmful for H c . The decrease in H c can also be partially attributed to the thermal-stress-induced (001) texture

  13. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  14. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    International Nuclear Information System (INIS)

    Salcedo, K L; Rodriguez, C A; Perez, F A; Riascos, H

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al 2 O 3 ) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  15. Optical properties of vacuum deposited polyaniline ultra-thin film

    International Nuclear Information System (INIS)

    Wahab, M. R. A.; Din, M.; Yunus, W. M. M.; Hasan, Z. A.; Kasim, A.

    2005-01-01

    Full text: Ultra-thin films of emeraldine base (EB) and emeraldine salt (ES) form of polyaniline (PANi) were prepared using electron-gun vacuum deposition. Thickness range studied was between 100AA and 450AA. Dielectric permittivity of the films determined from Kretchmann Configuration Surface Plasmon Resonance (SPR) angles-scanning set-up show shifts and narrowing of the SPR dip. Absorbance spectra of S-polarized and P-polarized light show the aging effect on orientation of the film. The effect of aging on its conductivity and photoluminescence is also correlated to the surface morphology

  16. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  17. Pulsed laser deposition of hydroxyapatite thin films

    Czech Academy of Sciences Publication Activity Database

    Koch, C.F.; Johnson, S.; Kumar, D.; Jelínek, Miroslav; Chrisey, D.B.; Doraiswamy, A.; Jin, C.; Narayan, R.J.; Mihailescu, I. N.

    2007-01-01

    Roč. 27, - (2007), s. 484-494 ISSN 0928-4931 Institutional research plan: CEZ:AV0Z10100522 Keywords : hydroxyapatite * pulsed laser deposition * bioactive ceramic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.486, year: 2007

  18. High-quality graphene grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition and its electrical transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, He; Shen, Chengmin, E-mail: cmshen@iphy.ac.cn; Tian, Yuan; Bao, Lihong; Chen, Peng; Yang, Rong; Yang, Tianzhong; Li, Junjie; Gu, Changzhi; Gao, Hong-Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-02-08

    High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh{sub 20} foil at 1050 °C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO{sub 2}/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh{sub 20} was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm{sup 2} V{sup −1} s{sup −1}. The results indicate that desired quality of single-layer graphene grown on PtRh{sub 20} foils can be obtained by tuning reaction conditions.

  19. Germanium films by polymer-assisted deposition

    Science.gov (United States)

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  20. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  1. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  2. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    Sater, D.M.; Gulino, D.A.

    1984-03-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  3. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  4. Deposition and characterization of aluminum magnesium boride thin film coatings

    Science.gov (United States)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14

  5. Ion assisted deposition of thermally evaporated Ag and Al films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Makous, J.L.; Kim, S.Y.; University of Arizona, Physics Department, Tucson, Arizona 85721; Aju University, Physics Department, Suwon, Korea)

    1989-01-01

    Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films are investigated. The results show that as the momentum supplied to the growing films by the bombarding ions per arriving metal atom increases, the refractive index at 632.8 nm increases and the extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive and in Al films compressive stress increases. In the Al films the change in optical constants can be explained by the variation in void volume. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the decrease in grain size and increase in trapped Ar in both types of film. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beam on growing thin films and determining the characteristics of thin metal films prepared by ion assisted deposition

  6. Deposition of polymer films in low pressure reactive plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Biederman, H.

    1981-12-11

    Sputtering and plasma polymerization have found wide application as deposition techniques and have been extensively studied. R.f. sputtering of plastics, in particular of polytetrafluoroethylene, are discussed in the first part of this paper. In the second part, the general concept of plasma polymerization is considered and some examples of applications of plasma-polymerized films are presented. Special attention is paid to fluorocarbon and fluorochlorocarbon films. It has been suggested that these films could be used in thin film capacitors or as passivating layers for integrated circuits. In the optical field some of these films have been used as convenient moisture-resistant, protective and antireflecting coatings. Their mechanical properties have also been examined with the intention of using them for reducing surface friction. More recently some metals have been incorporated into fluorocarbon films to obtain layers with novel properties. Experiments in which films were prepared by the plasma polymerization of certain Freons are described. Some electrical and optical properties of these films are presented. High dielectric losses were obtained in a metal/film/metal sandwich configuration and the possible influence of ambient atmospheric effects on these measurements is discussed.

  7. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  8. A comparative study of the adsorption and hydrogenation of acrolein on Pt(1 1 1), Ni(1 1 1) film and Pt Ni Pt(1 1 1) bimetallic surfaces

    Science.gov (United States)

    Murillo, Luis E.; Chen, Jingguang G.

    In this study we have investigated the reaction pathways for the decomposition and hydrogenation of acrolein (CH 2dbnd CH-CH dbnd O) on Ni/Pt(1 1 1) surfaces under ultra-high vacuum (UHV) conditions using temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). While gas-phase hydrogenation products are not observed from clean Pt(1 1 1), the subsurface Pt-Ni-Pt(1 1 1), with Ni residing below the first layer of Pt, is active for the self-hydrogenation of the C dbnd O bond to produce unsaturated alcohol (2-propenol) and the C dbnd C bond to produce saturated aldehyde (propanal), with the latter being the main hydrogenation product without the consecutive hydrogenation to saturated alcohol. For a thick Ni(1 1 1) film prepared on Pt(1 1 1), the self-hydrogenation yields for both products are lower than that from the Pt-Ni-Pt(1 1 1) surface. The presence of pre-adsorbed hydrogen further enhances the selectivity toward C dbnd O bond hydrogenation on the Pt-Ni-Pt(1 1 1) surface. In addition, HREELS studies of the adsorption of the two hydrogenation products, 2-propenol and propanal, are performed on the Pt-Ni-Pt(1 1 1) surface to identify the possible surface intermediates during the reaction of acrolein. The results presented here indicate that the hydrogenation activity and selectivity of acrolein on Pt(1 1 1) can be significantly modified by the formation of the bimetallic surfaces.

  9. The influences of target properties and deposition times on pulsed laser deposited hydroxyapatite films

    International Nuclear Information System (INIS)

    Bao Quanhe; Chen Chuanzhong; Wang Diangang; Liu Junming

    2008-01-01

    Hydroxyapatite films were produced by pulsed laser deposition from three kinds of hydroxyapatite targets and with different deposition times. A JXA-8800R electron probe microanalyzer (EPMA) with a Link ISIS300 energy spectrum analyzer was used to give the secondary electron image (SE) and determine the element composition of the films. The phases of thin film were analyzed by a D/max-γc X-ray diffractometer (XRD). The Fourier-transform infrared spectroscopy (FT-IR) was used to characterize the hydroxyl, phosphate and other functional groups. The results show that deposited films were amorphous which mainly composed of droplet-like particles and vibration of PO 4 3- groups. With the target sintering temperature deposition times increasing, the density of droplets is decreased. While with deposition times increasing, the density of droplets is increased. With the target sintering temperature and deposition time increasing, the ratio of Ca/P is increasing and higher than that of theoretical value of HA

  10. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    Science.gov (United States)

    2015-12-01

    characteristics . Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD...deposition, the reactor and precursor supply lines were baked at 250 °C for at least 4 h with a total Ar carrier gas flow of 5,000 sccm to remove...S. Thermal leakage characteristics of Pt/SrTiO3/Pt structures. Journal of Vacuum Science & Technology A. 2008;26:555–557. 31. Ryen L, Olsson E

  11. In situ measurement of conductivity during nanocomposite film deposition

    International Nuclear Information System (INIS)

    Blattmann, Christoph O.; Pratsinis, Sotiris E.

    2016-01-01

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T g polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T g ) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T g . Proper selection of the host polymer in combination with in situ resistance monitoring

  12. Preparation of Pt deposited nanotubular TiO2 as cathodes for enhanced photoelectrochemical hydrogen production using seawater electrolytes

    International Nuclear Information System (INIS)

    Nam, Wonsik; Oh, Seichang; Joo, Hyunku; Yoon, Jaekyung

    2011-01-01

    The purpose of this study was to develop effective cathodes to increase the production of hydrogen and use the seawater, an abundant resource in the earth as the electrolyte in photoelectrochemical systems. In order to fabricate the Pt/TiO 2 cathodes, various contents of the Pt precursor (0-0.4 wt%) deposited by the electrodeposition method were used. On the basis of the hydrogen evolution rate, 0.2 wt% Pt/TiO 2 was observed to exhibit the best performance among the various Pt/TiO 2 cathodes with the natural seawater and two concentrated seawater electrolytes obtained from single (nanofiltration) and combined membrane (nanofiltration and reverse osmosis) processes. The surface characterizations exhibited that crystal structures and morphological properties of Pt and TiO 2 found the results of XRD pattern and SEM/TEM images, respectively. - Graphical abstract: On the basis of photoelectrochemical hydrogen production, 0.2 wt% Pt/TiO 2 was observed to exhibit the best performance among the various Pt/TIO 2 cathodes with natural seawater. In comparison of hydrogen evolution rate with various seawater electrolytes, 0.2 wt% Pt/TiO 2 was found to show the better performance as cathode with the concentrated seawater electrolytes obtained from membrane. Highlights: → Pt deposited TiO 2 electrodes are used as cathode in PEC H 2 production. → Natural and concentrated seawater by membranes are used as electrolytes in PEC. → Pt/TiO 2 shows a good performance as cathode with seawater electrolytes. → H 2 evolution rate increases with more concentrated seawater electrolyte. → Highly saline seawater is useful resource for H 2 production.

  13. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  14. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

    Science.gov (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

    2011-07-01

    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  15. Laser deposition and analysis of biocompatible ceramic films - experiences andoverview

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Dostálová, T.; Fotakis, C.; Studnička, Václav; Jastrabík, Lubomír; Havránek, V.; Grivas, C.; Pospíchal, M.; Kadlec, J.; Peřina, Vratislav

    1996-01-01

    Roč. 6, č. 1 (1996), s. 144-149 ISSN 1054-660X Institutional research plan: CEZ:A02/98:Z1-010-914 Keywords : laser deposition * hydroxyapatite * ceramic films Subject RIV: BM - Solid Matter Physics ; Magnetism

  16. Mobility activation in thermally deposited CdSe thin films

    Indian Academy of Sciences (India)

    Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

  17. Flame spray pyrolysis synthesis and aerosol deposition of nanoparticle films

    DEFF Research Database (Denmark)

    Tricoli, Antonio; Elmøe, Tobias Dokkedal

    2012-01-01

    The assembly of nanoparticle films by flame spray pyrolysis (FSP) synthesis and deposition on temperature‐controlled substrates (323–723 K) was investigated for several application‐relevant conditions. An exemplary SnO2 nanoparticle aerosol was generated by FSP and its properties (e.g., particle...

  18. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    Optimizing growth conditions for electroless deposition of Au films on. Si(111) substrates. BHUVANA and G U KULKARNI*. Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for. Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India. MS received 24 March 2006.

  19. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  20. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  1. Progress on sputter-deposited thermotractive titanium-nickel films

    International Nuclear Information System (INIS)

    Grummon, D.S.; Hou Li; Zhao, Z.; Pence, T.J.

    1995-01-01

    It is now well established that titanium-nickel alloys fabricated as thin films by physical vapor deposition can display the same transformation and shape-memory effects as their ingot-metallurgy counterparts. As such they may find important application to microelectromechanical and biomechanical systems. Furthermore, we show here that titanium-nickel films may be directly processed so as to possess extremely fine austenite grain size and very high strength. These films display classical transformational superelasticity, including high elastic energy storage capacity, the expected dependence of martensite-start temperature on transformation enthalpy, and large, fully recoverable anelastic strains at temperatures above A f . Processing depends on elevated substrate temperatures during deposition, which may be manipulated within a certain range to control both grain size and crystallographic texture. It is also possible to deposit crystalline titanium-nickel films onto polymeric substrates, making them amenable to lithographic patterning into actuator elements that are well-suited to electrical excitation of the martensite reversion transformation. Finally, isothermal annealing of nickel-rich films, under conditions of controlled extrinsic residual stress, leads to topotaxial orientation of Ni 4 Ti 3 -type precipitates, and the associated possibility of two-way memory effects. Much work remains to be done, especially with respect to precise control of composition. (orig.)

  2. Deposition and characterization of (Cd sub(x) Zn sub(1-x)) S thin films

    International Nuclear Information System (INIS)

    Ferreira, C.L.

    1984-01-01

    Thin films of (Cd sub(x) Zn sub(1-x)) S were deposited on the substrates of soda-lime glass and borosilicate glass by coevaporation of CdS and ZnS, using the technique of hot wall. The temperatures for substrate (200 0 C), wall (350 0 C), CdS source (900 0 -1000 0 C) and ZnS source (900 0 -1200 0 C) were found to be optimum for formation of the films with deposition rates in the range of 0.5 μm.min -1 . The films obtained were with Wurtzite structure, with the crystallographic planes oriented in (001) direction. A linear variation of the parameter C 0 of hexagonal lattice with the concentration of Zn, in the range of 20% to 60%, was observed. For lower and higher concentration outside this range there was a tendency of saturation of C 0 . Measurements of Hall voltage and resistivity demonstrated the mobility and carrier concentration in the range of 10-40 cm 2 v -1 sec -1 and 1.45 x 10 19 - 3.83 x 10 20 cm -3 , respectively, whereas the resistivity of the films ranged from 2.11 x 10 -2 Ω.cm for the Zn concentration variation from 20% to 70%. Measurements of optical absorption revealed linear variation of refractive index of the films with Zn concentration for the wavelenght in the range of 0.5 to 2.0 μm. (Cd sub(x) Zn sub(1-x)) S films with 0.7 2 S. (Author) [pt

  3. Synthesis and Electrochemical Evaluation of Carbon Supported Pt-Co Bimetallic Catalysts Prepared by Electroless Deposition and Modified Charge Enhanced Dry Impregnation

    Directory of Open Access Journals (Sweden)

    John Meynard M. Tengco

    2016-06-01

    Full Text Available Carbon-supported bimetallic Pt-Co cathode catalysts have been previously identified as higher activity alternatives to conventional Pt/C catalysts for fuel cells. In this work, a series of Pt-Co/C catalysts were synthesized using electroless deposition (ED of Pt on a Co/C catalyst prepared by modified charge enhanced dry impregnation. X-ray diffraction (XRD and scanning transmission electron microscopy (STEM characterization of the base catalyst showed highly dispersed particles. A basic ED bath containing PtCl62− as the Pt precursor, dimethylamine borane as reducing agent, and ethylenediamine as stabilizing agent successfully targeted deposition of Pt on Co particles. Simultaneous action of galvanic displacement and ED resulted in Pt-Co alloy formation observed in XRD and energy dispersive X-ray spectroscopy (XEDS mapping. In addition, fast deposition kinetics resulted in hollow shell Pt-Co alloy particles while particles with Pt-rich shell and Co-rich cores formed with controlled Pt deposition. Electrochemical evaluation of the Pt-Co/C catalysts showed lower active surface but much higher mass and surface activities for oxygen reduction reaction compared to a commercial Pt/C fuel cell catalyst.

  4. Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kwangseok; Han, Seungwoo; Park, Kyoungwan; Sok, Junghyun

    2006-01-01

    In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 .deg. C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O 2 or N 2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O 2 atmosphere turned out to be much larger than that of the post-annealed films in a N 2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O 2 content and the top electrode improve the electroresistance.

  5. Modification of energy band alignment and electric properties of Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hirsch, S.; Komissinskiy, P., E-mail: komissinskiy@oxide.tu-darmstadt.de; Flege, S.; Li, S.; Rachut, K.; Klein, A.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-06-28

    We report on the effects of Ag impurities at interfaces of parallel-plate Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin film ferroelectric varactors. Ag impurities occur at the interfaces due to diffusion of Ag from colloidal silver paint used to attach the varactor samples with their back side to the plate heated at 600–750 °C during deposition of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}. X-ray photoelectron spectroscopy and secondary ion mass spectrometry suggest that amount and distribution of Ag adsorbed at the interfaces depend strongly on the adsorbent surface layer. In particular, Ag preferentially accumulates on top of the Pt bottom electrode. The presence of Ag significantly reduces the barrier height between Pt and Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} leading to an increased leakage current density and, thus, to a severe degradation of the varactor performance.

  6. Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

    2008-04-30

    Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

  7. Pulsed Laser Deposition of Tungsten Thin Films on Graphite

    International Nuclear Information System (INIS)

    Kassem, W.; Tabbal, M.; Roumie, M.

    2011-01-01

    Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

  8. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  9. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  10. Bath parameter dependence of chemically deposited Copper Selenide thin film

    International Nuclear Information System (INIS)

    Al-Mamun; Islam, A.B.M.O.

    2004-09-01

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation Of Cu 2-x Se thin films on to glass substrate. Different thin fms (0.2-0.6/μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that completing the Cu 2+ ions with EA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu 2-x Se. (author)

  11. Electric-regulated enhanced in-plane uniaxial anisotropy in FeGa/PMN-PT composite using oblique pulsed laser deposition

    Science.gov (United States)

    Zhang, Yi; Huang, Chaojuan; Turghun, Mutellip; Duan, Zhihua; Wang, Feifei; Shi, Wangzhou

    2018-04-01

    The FeGa film with in-plane uniaxial magnetic anisotropy was fabricated onto different oriented single-crystal lead magnesium niobate-lead titanate using oblique pulsed laser deposition. An enhanced in-plane uniaxial magnetic anisotropy field of FeGa film can be adjusted from 18 Oe to 275 Oe by tuning the oblique angle and polarizing voltage. The competitive relationship of shape anisotropy and strain anisotropy has been discussed, which was induced by oblique angle and polarizing voltage, respectively. The (100)-oriented and (110)-oriented PMN-PT show completely different characters on voltage-dependent magnetic properties, which could be attributed to various anisotropy directions depended on different strain directions.

  12. Evolution of microstructure and residual stress on L1{sub 0} ordering in FePt thin films with different initial stress states

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Yuan, F.T. [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 221, Taiwan (China); Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Sun, A.C. [Department of Chemical Engineering and Materials Science, Yuan Ze University, Jungli 320, Taiwan (China); Su, S.H.; Chiu, K.F. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China)

    2016-01-15

    We have characterized the dependence of microstructure, and internal strain/stress on L1{sub 0} ordering in 40 nm thick FePt films with different initial stresses. The microstructural and crystallographic results indicate that defect annihilation and grain growth induced an increase in tensile stress of ~1 GPa before extensive L1{sub 0} ordering. The induced tensile stress can efficiently facilitate the nucleation of L1{sub 0} phase owing to that the volume expansion of L1{sub 0} ordering and atomic rearrangement neutralizes the tensile stress. If the as-deposited FePt film has a highly compressive state, the induced tensile stress will be canceled out and ordering is retarded, which results in a higher ordering temperature. - Highlights: • Microstructure-stress connection in FePt films was studied. • Initial stress alters microstructure and stress evolution during annealing. • Densification induces tensile stress of ~1 GPa before extensive L1{sub 0} ordering. • Induced tensile stress can efficiently facilitate the nucleation of L1{sub 0} phase. • Compressively initial stress results in a higher ordering temperature .

  13. UV pulsed laser deposition of magnetite thin films

    International Nuclear Information System (INIS)

    Parames, M.L.; Mariano, J.; Rogalski, M.S.; Popovici, N.; Conde, O.

    2005-01-01

    Magnetite thin films were grown by pulsed laser deposition in O 2 reactive atmosphere from Fe 3 O 4 targets. The ablated material was deposited onto Si(1 0 0) substrates at various temperatures up to 623 K. The temperature dependence of structure and stoichiometry was investigated by X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). The XRD results show that films grown between 483 and 623 K are obtained as pure phase magnetite with an estimated average crystallite size increasing from 14 to 35 nm, respectively. This is in agreement with the CEMS spectra analysis, indicating isomer shift and internal field values for both the T d and O h sites close to those reported for the bulk material and a random orientation of the magnetic moments. The influence of the deposition temperature on the estimated Fe (9-x)/3 O 4 stoichiometry is related to an increase in the vacancy concentration from 483 to 623 K

  14. Atomically flat surface of (0 0 1) textured FePt thin films by residual stress control

    Energy Technology Data Exchange (ETDEWEB)

    Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chou, C.L.; Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Lee, H.Y. [National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan (China)

    2015-11-01

    Highlights: • We demonstrate crystallographic structure, (0 0 1) texture, surface roughness, and residual stress in the single-layered FePt thin films annealed at various heating rates (10–110 K/s). • Texture coefficient of (0 0 1)-plane of the samples increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress. • Dewetting phenomenon due to stress relaxation leads to the broadening of [0 0 1] easy axis and degradation of perpendicular magnetic anisotropy. • A strong dependence of surface roughness on in-plane residual stress was revealed. • When the samples are RTA at 40 K/s, the enhanced perpendicular magnetic anisotropy and atomically surface roughness are achieved. - Abstract: Single-layered Fe{sub 52}Pt{sub 48} films with thickness of 10 nm were sputter-deposited on glass substrates. Rapid thermal annealing with different heating rates (10–110 K/s) was applied to transform as-deposited fcc phase into L1{sub 0} phase and meanwhile to align [0 0 1]-axis of L1{sub 0} crystal along plane normal direction. Based on X-ray diffractometry using synchrotron radiation source, the texture coefficient of (0 0 1)-plane increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress analyzed by asymmetric sin{sup 2} ψ method. Furthermore, it was revealed by atomic force microscopy that the dewetting process occurred as heating rate was raised up to 80 K/s and higher. The change in the microstructure due to stress relaxation leads to the degradation of (0 0 1) orientation and magnetic properties. Surface roughness is closely related to the in-plane tensile stress. Enhanced perpendicular magnetic anisotropy and atomically flat surface were achieved for the samples annealed at 40 K/s, which may be suitable for further practical applications. This work also suggests a feasible way for surface

  15. Influence of plasma pressure on the growth characteristics and ferroelectric properties of sputter-deposited PZT thin films

    International Nuclear Information System (INIS)

    Bose, A.; Maity, T.; Bysakh, S.; Seal, A.; Sen, Suchitra

    2010-01-01

    PZT thin films of thickness (320-1040) nm were synthesized on Si/SiO 2 /Ti/Pt multilayered substrates by radio frequency magnetron sputtering. The influence of plasma pressure in the range of (0.24-4.9) Pa, during deposition, on the structural, electrical and ferroelectric properties of the PZT films was systematically studied. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and cross-sectional transmission electron microscopy (XTEM) were employed for structural study. Nano-probe Energy Dispersive (EDX) line scanning was employed to investigate the elemental distribution across the film-bottom electrode interface. I-V characteristics and polarization-electric field (P-E) hysteresis loop of the films were measured. The study reveals that the plasma pressure has a strong influence on the evolution and texture of the ferroelectric perovskite phase and microstructure of the films. At an optimum plasma pressure of 4.1 Pa, PZT films are grown with 93% perovskite phase with (1 1 1) preferred orientation and uniform granular microstructure. These films show a saturation polarization of 67 μC/cm 2 , remnant polarization of 30 μC/cm 2 and coercive field of 28 kV/cm which, according to the literature, seem to be suitable for device applications. Transmission electron microscopy (TEM) study shows that at a plasma pressure of 4.1 Pa, the PZT/bottom Pt interface is sharp and no amorphous interlayer is formed at the interface. At a higher plasma pressure of 4.9 Pa, poor I-V and P-E hysteresis loop are observed which are interpreted as due to an amorphous interlayer at the film-bottom electrode interface which is possibly enriched in Pb, Zr, O and Pt.

  16. Enhanced methanol electro-oxidation activity of Pt/MWCNTs electro-catalyst using manganese oxide deposited on MWCNTs

    International Nuclear Information System (INIS)

    Nouralishahi, Amideddin; Khodadadi, Abbas Ali; Mortazavi, Yadollah; Rashidi, Alimorad; Choolaei, Mohammadmehdi

    2014-01-01

    Highlights: • Promoting effects of manganese oxide (MnO x ) on methanol electro-oxidation over Pt/MWCNTs are studied. • 3.3 times higher activity and improved stability are observed on Pt/MnO x -MWCNTs in MOR. • Both hydrogen spill over and bi-functional mechanism are facilitated in presence of MnO x . • MnO x significantly enhances electrochemical active surface area and dispersion of Pt nanoparticles. • Proton conductivity of electrocatalyst layer is improved upon MnO x incorporation. - Abstract: Electro-oxidation of methanol on platinum nanoparticles supported on a nanocomposite of manganese oxide (MnO x ) and multi-wall carbon nanotubes (MWCNTs) is investigated. The morphology, structure, and chemical composition of the electro-catalysts are characterized by TEM, XRD, EDS, TGA, and H 2 -TPR. The electro-catalytic properties of electrodes are examined by cyclic voltammetry, CO-stripping, electrochemical impedance spectroscopy (EIS), and linear sweep voltammetry (LSV). Compared to Pt/MWCNTs, the Pt/MnO x -MWCNTs electro-catalyst exhibits about 3.3 times higher forward peak current density, during cyclic voltammetry, and 4.6 times higher exchange current density in methanol electro-oxidation reaction. In addition, deposition of manganese oxide onto MWCNTs dramatically increases the electrochemical active surface area from 29.7 for Pt/MWCNTs to 89.4 m 2 g −1 Pt for Pt/MnO x -MWCNTs. The results of long-term cyclic voltammetry show superior stability of Pt nanoparticles upon addition of manganese oxide to the support. Furthermore, the kinetics of formation of the chemisorbed OH groups improves upon manganese oxide incorporation. This leads to a lower onset potential of CO ads oxidation on Pt/MnO x -MWCNTs than on Pt/MWCNTs

  17. Nanohole 3D-size tailoring through polystyrene bead combustion during thin film deposition

    International Nuclear Information System (INIS)

    Peng Xiaofeng; Kamiya, Itaru

    2009-01-01

    A novel approach is presented for nanohole 3D-size tailoring. The process starts with a monolayer of polystyrene (PS) beads spun coat on silicon wafer as a template. The holes can be directly prepared through combustion of PS beads by oxygen plasma during metal or oxide thin film deposition. The incoming particles are prevented from adhering on PS beads by H 2 O and CO 2 generated from the combustion of the PS beads. The hole depth generally depends on the film thickness. The hole diameter can be tailored by the PS bead size, film deposition rate, and also the combustion speed of the PS beads. In this work, a series of holes with depth of 4-24 nm and diameter of 10-36 nm has been successfully prepared. The hole wall materials can be selected from metals such as Au or Pt and oxides such as SiO 2 or Al 2 O 3 . These templates could be suitable for the preparation and characterization of novel nanodevices based on single quantum dots or single molecules, and could be extended to the studies of a wide range of coating materials and substrates with controlled hole depth and diameters.

  18. Vacuum deposition onto webs, films and foils

    CERN Document Server

    Bishop, Charles A

    2011-01-01

    Roll-to-roll vacuum deposition is the technology that applies an even coating to a flexible material that can be held on a roll and provides a much faster and cheaper method of bulk coating than deposition onto single pieces or non-flexible surfaces, such as glass. This technology has been used in industrial-scale applications for some time, including a wide range of metalized packaging (e.g. snack packets). Its potential as a high-speed, scalable process has seen an increasing range of new products emerging that employ this cost-effective technology: solar energy products are moving from rigid panels onto flexible substrates, which are cheaper and more versatile; in a similar way, electronic circuit 'boards' can be produced on a flexible polymer, creating a new range of 'flexible electronics' products; and, flexible displays are another area of new technology in vacuum coating, with flexible display panels and light sources emerging. Charles Bishop has written this book to meet the need he identified, as a t...

  19. Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

    Science.gov (United States)

    Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.

    2017-11-01

    Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

  20. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  1. First principles investigation of the activity of thin film Pt, Pd and Au surface alloys for oxygen reduction

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Hansen, Heine Anton; Rossmeisl, Jan

    2015-01-01

    driving force for surface segregation, diffusion to defects or surface self-assembling. On the basis of stability and activity analysis we conclude that the near surface alloy of Pd in Pt and some PdAu binary and PtPdAu ternary thin films with a controlled amount of Au are the best catalysts for oxygen......Further advances in fuel cell technologies are hampered by kinetic limitations associated with the sluggish cathodic oxygen reduction reaction. We have investigated a range of different formulations of binary and ternary Pt, Pd and Au thin films as electrocatalysts for oxygen reduction. The most...... active binary thin films are near-surface alloys of Pt with subsurface Pd and certain PdAu and PtAu thin films with surface and/or subsurface Au. The most active ternary thin films are with pure metal Pt or Pd skins with some degree of Au in the surface and/or subsurface layer and the near-surface alloys...

  2. X-ray diffraction and Moessbauer studies of structural changes and L10 ordering kinetics during annealing of polycrystalline Fe51Pt49 thin films

    International Nuclear Information System (INIS)

    Spada, F.E.; Parker, F.T.; Platt, C.L.; Howard, J.K.

    2003-01-01

    Room-temperature x-ray diffraction and Moessbauer effect techniques have been used to characterize the structural features and local atomic environments of sputtered Fe 51 Pt 49 thin films following various isothermal treatments. Both techniques show that no significant changes occur in the chemically ordered L1 0 tetragonal phase after it has formed. In contrast, changes in the disordered face-centered-cubic (fcc) phase are observed prior to the transformation into the ordered tetragonal phase. Moessbauer measurements indicate the development of increasing short-range order in the disordered fcc phase with increasing annealing temperature. Asymmetries in the fcc x-ray diffraction profiles also suggest the presence of lattice distortions caused by atomic size differences commonly found in the quenched disordered fcc phase of materials that form ordered structures. Quasi-real-time kinetic measurements of the disorder→order transformation in sputtered Fe 51 Pt 49 thin films within the temperature range 300 deg. C≤T≤400 deg. C have also been conducted using high-temperature x-ray diffraction techniques. Significant differences are observed between the kinetic parameters determined in this study and those of previous reports. It is proposed that these differences arise from the lower temperature range investigated in the present work, where the gradual changes occurring in the fcc phase can influence the rate of the ordering transformation. Furthermore, because the initial state of disorder in Fe ∼50 Pt ∼50 films can be influenced by the deposition conditions, variability in the low-temperature ordering kinetics should be expected among Fe ∼50 Pt ∼50 films prepared under different conditions

  3. Quality of YBCO thin films grown on LAO substrates exposed to the film deposition - film removal processes

    Energy Technology Data Exchange (ETDEWEB)

    Blagoev, B; Nurgaliev, T [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Mozhaev, P B [Institute of Physics and Technology, Russian Academy of Sciences, 117218 Moscow (Russian Federation); Sardela, M; Donchev, T [Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, IL 61801 (United States)], E-mail: blago_sb@yahoo.com

    2008-05-01

    The characteristics are investigated of high temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) films grown on LaAlO{sub 3} (LAO) substrates being exposed a different number of times to YBCO film deposition and acid-solution-based cleaning procedures. Possible mechanisms of degradation of the substrate surface quality reflecting on the growing YBCO film parameters are discussed and analyzed.

  4. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  5. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  6. Vacuum deposition of high quality metal films on porous substrates

    International Nuclear Information System (INIS)

    Barthell, B.L.; Duchane, D.V.

    1982-01-01

    A composite mandrel has been developed consisting of a core of low density polymethylpentene foam overcoated with a thin layer of film-forming polymer. The surface tension and viscosity of the coating solution are important parameters in obtaining a polymer film which forms a continuous, smooth skin over the core without penetrating into the foam matrix. Water soluble film formers with surface tensions in the range of 45 dyn/cm and minimum viscosities of a few hundred centipoises have been found most satisfactory for coating polymethylpentene foam. By means of this technique, continuous polymer fims with thicknesses of 10--20 μm have been formed on the surface of machined polymethylpentene foam blanks. Aluminum has been vacuum deposited onto these composite mandrels to produce metal films which appear smooth and generally defect free even at 10 000 times magnification

  7. Polarized Raman spectroscopy of chemically vapour deposited diamond films

    International Nuclear Information System (INIS)

    Prawer, S.; Nugent, K.W.; Weiser, P.S.

    1994-01-01

    Polarized micro-Raman spectra of chemically vapour deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to non-diamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the non-diamond components in the films is almost completely depolarized whilst the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semi-quantitative fashion for the assessment of the purity, perfection and stress in CVD diamond films. 8 refs., 1 tab. 2 figs

  8. Characteristics of ferroelectric Pb(Zr,Ti)O3 thin films having Pt/PtOx electrode barriers

    International Nuclear Information System (INIS)

    Lee, Kwangbae; Rhee, Byung Roh; Lee, Chanku

    2001-01-01

    We have investigated the feasibility of the Pt/PtO x multilayer as an electrode barrier for Pb(Zr,Ti)O 3 (PZT)-based ferroelectric random access memories. PtO x and Pt layers were prepared on polycrystalline-Si/SiO 2 /Si substrates by means of the sputtering method in Ar and O 2 ambience, and the Pb(Zr 0.53 Ti 0.47 )O 3 layer was prepared by the sol-gel method. A capacitor consisting of Pt/PtO x /PZT/PtO x /Pt/PtO x /poly-Si had a remanent polarization of 18 μC/cm 2 and a low coercive field of 32 kV/cm. The polarization fatigue behavior of test capacitors was improved as compared with that of Pt/PZT/Pt, which showed negligible fatigue loss of 15% after 10 11 switching repetitions with a frequency of 1 MHz. Copyright 2001 American Institute of Physics

  9. Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

    International Nuclear Information System (INIS)

    Yu Shiji; Ma Tengcai

    2003-01-01

    Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality

  10. Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

    Directory of Open Access Journals (Sweden)

    Song XM

    2009-01-01

    Full Text Available Abstract The Pt nanoparticles (NPs, which posses the wider tunable localized-surface-plasmon (LSP energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

  11. Static magnetism and thermal switching in randomly oriented L10 FePt thin films

    Science.gov (United States)

    Lisfi, A.; Pokharel, S.; Alqarni, A.; Akioya, O.; Morgan, W.; Wuttig, M.

    2018-05-01

    Static magnetism and thermally activated magnetic relaxation were investigated in granular FePt films (20 nm-200 nm thick) with random magnetic anisotropy through hysteresis loop, torque curve and magnetization time dependence measurements. While the magnetism of thicker film (200 nm thick) is dominated by a single switching of the ordered L10 phase, thinner film (20 nm) displays a double switching, which is indicative of the presence of the disordered cubic phase. The pronounced behavior of double switching in thinner film suggests that the film grain boundary is composed of soft cubic magnetic phase. The magnetic relaxation study reveals that magnetic viscosity S of the films is strongly dependent on the external applied field and exhibits a maximum value (12 kAm) around the switching field and a vanishing behavior at low (1 kOe) and large (12 kOe) fields. The activation volume of the thermal switching was found to be much smaller than the physical volume of the granular structure due to the incoherent rotation mode of the magnetization reversal mechanism, which is established to be domain wall nucleation.

  12. Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Junshuai; Wang Jinxiao; Yin Min; Gao Pingqi; He Deyan; Chen Qiang; Li Yali; Shirai, Hajime

    2008-01-01

    An inductively coupled plasma (ICP) system with the adjustable distance between the inductance coil and substrates was designed to effectively utilize the spatial confinement of ICP discharge, and then control the gas-phase transport process. The effects of the gas phase processes on the crystallinity and preferred orientation of silicon films deposited on glass were systematically investigated. The investigation was conducted in the ICP-chemical vapor deposition process with the precursor gas of a SiH 4 /H 2 mixture at a substrate temperature of 350 deg. Highly crystallized silicon films with different preferred orientations, (111) or (220), could be selectively deposited by adjusting the SiH 4 dilution ratio [R=[SiH 4 ]/([SiH 4 ]+[H 2 ])] or total working pressure. When the total working pressure is 20 Pa, the crystallinity of the silicon films increases with the increase of the SiH 4 dilution ratio, while the preferred orientation was changed from (111) to (220). In the case of the fixed SiH 4 dilution (10%), the silicon film with I (220) /I (111) of about 3.5 and Raman crystalline fraction of about 89.6% has been deposited at 29.7 nm/min when the total working pressure was increased to 40 Pa. At the fixed SiH 4 partial pressure of 2 Pa, the film crystallinity decreases and the preferred orientation is always (111) with increasing the H 2 partial pressure from 18 to 58 Pa. Atomic force microscope reveals that the film deposited at a relatively high H 2 partial pressure has a very rough surface caused by the devastating etching of H atoms to the silicon network

  13. Titanium dioxide thin films by atomic layer deposition: a review

    Science.gov (United States)

    Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

    2017-09-01

    Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

  14. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  15. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    , ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

  16. Particulate generation during pulsed laser deposition of superconductor thin films

    International Nuclear Information System (INIS)

    Singh, R.K.

    1993-01-01

    The nature of evaporation/ablation characteristics during pulsed laser deposition strongly controls the quality of laser-deposited films. To understand the origin of particulates in laser deposited films, the authors have simulated the thermal history of YBa 2 Cu 3 O 7 targets under intense nanosecond laser irradiation by numerically solving the heat flow equation with appropriate boundary conditions. During planar surface evaporation of the target material, the sub-surface temperatures were calculated to be higher than the surface temperatures. While the evaporating surface of the target is constantly being cooled due to the latent heat of vaporization, subsurface superheating occurs due to the finite absorption depth of the laser beam. Sub-surface superheating was found to increase with decreasing absorption coefficient and thermal conductivity of the target, and with increasing energy density. The superheating may lead to sub-surface nucleation and growth of the gaseous phase which can expand rapidly leading to microexplosions and ''volume expulsion'' of material from the target. Experiments conducted by the authors and other research groups suggest a strong relation between degree of sub-surface superheating and particle density in laser-deposited films

  17. Enhanced activity and interfacial durability study of ultra low Pt based electrocatalysts prepared by ion beam assisted deposition (IBAD) method

    International Nuclear Information System (INIS)

    Ramaswamy, N.; Arruda, T.M.; Wen, W.; Hakim, N.; Saha, M.; Gulla, A.; Mukerjee, S.

    2009-01-01

    Ultra low loading noble metal (0.04-0.12 mg Pt /cm 2 ) based electrodes were obtained by direct metallization of non-catalyzed gas diffusion layers via dual ion beam assisted deposition (IBAD) method. Fuel cell performance results reported earlier indicate significant improvements in terms of mass specific power density of 0.297 g Pt /kW with 250 A thick IBAD deposit (0.04 mg Pt /cm 2 for a total MEA loading of 0.08 mg Pt /cm 2 ) at 0.65 V in contrast to the state of the art power density of 1.18 g Pt /kW using 1 mg Pt(MEA) /cm 2 at 0.65 V. In this article we report the peroxide radical initiated attack of the membrane electrode assembly utilizing IBAD electrodes in comparison to commercially available E-TEK (now BASF Fuel Cell GmbH) electrodes and find the pathway of membrane degradation as well. A novel segmented fuel cell is used for this purpose to relate membrane degradation to peroxide generation at the electrode/electrolyte interface by means of systematic pre and post analyses of the membrane are presented. Also, we present the results of in situ X-ray absorption spectroscopy (XAS) experiments to elucidate the structure/property relationships of these electrodes that lead to superior performance in terms of gravimetric power density obtained during fuel cell operation.

  18. Study of the electrical and nanosecond third order nonlinear optical properties of ZnO films doped with Au and Pt nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Trejo-Valdez, Martin, E-mail: martin.trejo@laposte.net [ESIQIE, Instituto Politécnico Nacional, México, D.F. 07738, México (Mexico); Sobral, Hugo [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apartado Postal 70-186, México, D.F. 04510, México (Mexico); Martínez-Gutiérrez, Hugo [Centro de Nanociencias y Micro y Nanotecnologías del Instituto Politécnico Nacional, México, D.F. 07738, México (Mexico); Torres-Torres, Carlos [Sección de Estudios de Posgrado e Investigación, ESIME ZAC, Instituto Politécnico Nacional, México, D.F. 07738, México (Mexico)

    2016-04-30

    Zinc oxide films doped with platinum and gold nanoparticles were deposited by the spray pyrolysis technique on glass substrates. A titanium dioxide sol–gel solution containing gold and platinum aqueous ions was employed for synthesizing the nanoparticles by ultraviolet-light irradiation. The conductive properties of the samples were characterized by the electrochemical impedance spectroscopy technique. Our results showed that the impedance of zinc oxide films doped with metallic nanoparticles was, by far, lower than typical measurements in zinc oxide films. A strong enhancement in the nanosecond nonlinear optical response was also obtained in the studied metallic doped films. A vectorial two-mixing experiment performed at 532 nm and 4 ns allowed us to evaluate the sample with a third order optical nonlinearity described by approximately | χ{sub 1111}{sup (3)}| = 2.6 × 10{sup −8} esu. - Highlights: • ZnO films doped with Pt and Au nanoparticles were synthetized. • The inclusion of metallic nanoparticles in the film improves optical nonlinearities. • Conductivity of the films was enhanced by the contribution of the nanoparticles.

  19. Deposition and consolidation of porous ceramic films for membrane separation

    DEFF Research Database (Denmark)

    Elmøe, Tobias Dokkedal; Tricoli, Antonio; Johannessen, Tue

    The deposition of porous ceramic films for membrane separation can be done by several processes such as thermophoresis [1], dip-coating [2] and spray pyrolysis [3]. Here we present a high-speed method, in which ceramic nano-particles form a porous film by filtration on top of a porous ceramic...... substrate [4]. Ceramic nano-particles are generated in a flame, using either a premixed (gas) flame, in which a metal-oxide precursor is evaporated in an N2 stream, which is combusted with methane and air, or using a flame spray pyrolysis, in which a liquid metal-oxide precursor is sprayed through a nozzle...

  20. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  1. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  2. Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

    International Nuclear Information System (INIS)

    Lee, Hee-Chul; Lee, Won-Jong

    2002-01-01

    Structural and electrical characteristics of Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO 2 , and Pt/IrO 2 ) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO 2 electrode contain a large amount of PbO x phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO 2 , and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO 2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics

  3. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  4. A new thin film deposition process by cathodic plasma electrolysis

    International Nuclear Information System (INIS)

    Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

    2004-01-01

    Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

  5. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  6. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  7. The properties of nanocomposite aluminium-silicon based thin films deposited by filtered arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bendavid, A.; Martin, P.J.; Takikawa, H

    2002-12-02

    Thin films of aluminium silicon oxynitride have been deposited on conducting (100) silicon wafers by filtered arc deposition (FAD) under nitrogen and/or oxygen gas flow. The influence of the N{sub 2}/O{sub 2} flow ratio on the crystal structure, optical and mechanical properties has been investigated. The results of X-ray diffraction showed that the film structure comprised of an AlN crystallite with amorphous Si{sub 3}N{sub 4} and SiO{sub x}. The optical properties over the range of 350-800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on N{sub 2}/O{sub 2} flow ratio. The refractive index values of the films were measured to be in the range of 2.2-1.64 at a wavelength of 670 nm for oxygen flow range of 0-100%. The hardness of the films was found to be strongly dependent on the oxygen content in the film. The hardness range of the films was between 10 and 22 GPa and for the stress between 0.3 and 1.2 GPa.

  8. Apparatus and process for deposition of hard carbon films

    Science.gov (United States)

    Nyaiesh, Ali R.; Garwin, Edward L.

    1989-01-03

    A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

  9. Pulsed laser deposition and characterization of cellulase thin films

    Science.gov (United States)

    Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

    2013-08-01

    Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

  10. Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Coelho, S.M.M.; Nel, J.M.; Meyer, W.E. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2012-10-15

    We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n-type, P-doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well-known defects introduced by high energy electron irradiation of the same material. The most prominent EBD-induced defects thus identified were the E-center (VP center), the A-center (VO center), interstitial carbon (C{sub i}), and the interstitial carbon-substitutional carbon (C{sub i}C{sub s}) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 {mu}m below the metal-Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Purity and surface roughness of vacuum deposited aluminium films

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N G; Arsenio, T P [Instituto Militar de Engenharia, Rio de Janeiro (Brazil); Patnaik, B K [Pontificia Universidade Catolica do Rio de Janeiro (Brazil). Instituto de Fisica; Assuncao, F C.R.; de Souza, A M [Pontificia Universidade Catolica do Rio de Janeiro (Brazil). Departamento de Ciencia dos Materiais e Metalurgia

    1975-04-01

    The authors studied the purity, surface roughness and grain size of vacuum-deposited aluminium films, using an intermetallic crucible and a continuous feed of pure aluminium wire. The grain size and roughness were studied by electron difraction, X-ray diffraction and the scanning electron microscope. Purity was determined by X-ray fluorescence produced by proton bombardment in the Van de Graaff accelerator and by X-ray and optical emission spectrometry.

  12. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Science.gov (United States)

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  13. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  14. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  15. Supercritical fluid molecular spray film deposition and powder formation

    Science.gov (United States)

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  16. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    International Nuclear Information System (INIS)

    Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

    2007-01-01

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

  17. Thermoluminescence of Zn O thin films deposited by chemical bath

    International Nuclear Information System (INIS)

    Camacho A, M. C.; Cruz V, C.; Bernal H, R.; Berman M, D.; Castano M, V. M.

    2015-10-01

    Full text: Zn O films on Si were synthesized using a deposition method by chemical bath and thermally treated at 900 degrees C for 12 h in air. The morphological characterization by scanning electron microscopy reveals that uniform films were obtained. To investigate the thermoluminescent properties of the films were exposed to irradiation with beta particles with doses in the range from 0.5 to 128 Gy. The brightness curves obtained using a heating rate of 5 degrees C have two peaks, one at 124 and another at 270 degrees C, and a linear dependence of the integrated thermoluminescence as a function of dose. The second maximum reveals the existence of localized trapping states of potential utility in thermoluminescent dosimetry. (Author)

  18. Fabrication and application of flexible graphene silk composite film electrodes decorated with spiky Pt nanospheres

    Science.gov (United States)

    Liang, Bo; Fang, Lu; Hu, Yichuan; Yang, Guang; Zhu, Qin; Ye, Xuesong

    2014-03-01

    A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a sensitivity of 0.56 mA mM-1 cm-2, a linear range of 0-2.5 mM and an ultralow detection limit of 0.2 μM (S/N = 3). A glucose biosensor electrode was further fabricated by enzyme immobilization. The results show a sensitivity of 150.8 μA mM-1 cm-2 and a low detection limit of 1 μM (S/N = 3) for glucose detection. The strategy of coating graphene sheets on a silk fibre surface provides a new approach for developing electrically conductive biomaterials, tissue engineering scaffolds, bendable electrodes, and wearable biomedical devices.A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a

  19. Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition

    International Nuclear Information System (INIS)

    Jeon, M.K.; Chung, H.J.; Kim, K.W.; Oh, K.S.; Woo, S.I.

    2005-01-01

    Cerium-substituted bismuth titanate (Bi 3.25 Ce 0.75 Ti 3 O 12 (BCT)) films were deposited on the Pt(111)/SiO 2 /Si(100) substrates by a liquid source misted chemical deposition technique. This film showed X-ray diffraction patterns that crystallization along the (006) direction was suppressed and did not contain any other oxides. The remnant polarization of this film increased with increase in annealing temperature. The 2P r and 2E c values of the BCT film annealed at 700 deg. C were 19.72 μC/cm 2 and 357 kV/cm, respectively. 2P r value of this film decreased by less than 5% of the initial value after 7 x 10 9 read/write switching cycles at a frequency of 1 MHz

  20. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    International Nuclear Information System (INIS)

    Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

    2015-01-01

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

  1. Room temperature magnetism of few-nanometers-thick Fe{sub 3}O{sub 4}(111) films on Pt(111) and Ru(0001) studied in ambient conditions

    Energy Technology Data Exchange (ETDEWEB)

    Lewandowski, M., E-mail: lewandowski@amu.edu.pl [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Miłosz, Z.; Michalak, N.; Ranecki, R. [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Sveklo, I.; Kurant, Z.; Maziewski, A. [Faculty of Physics, University of Białystok, Lipowa 41, 15-424 Białystok (Poland); Mielcarek, S. [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Luciński, T. [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Jurga, S. [NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

    2015-09-30

    Few-nanometers-thick Fe{sub 3}O{sub 4}(111) films were epitaxially grown on Pt(111) and Ru(0001) single crystal supports by sequential iron deposition and oxidation in an ultra-high vacuum chamber. The growth of well-ordered magnetite films was confirmed by low energy electron diffraction. The films were covered with a protective Au layer and subjected to magnetic and structural studies in ambient conditions. Magnetic hysteresis loops, recorded using magneto-optical Kerr effect apparatus, confirmed magnetic ordering in both films at room temperature. The Kerr measurements indicated in-plane orientation of magnetization, which was supported by the lack of magnetic contrast in magnetic force microscopy images. Atomic force microscopy revealed significant differences in morphology of the films, tentatively attributed to different lattice mismatch with Pt(111) and Ru(0001) single crystal supports. - Highlights: • Few-nanometers-thick Fe{sub 3}O{sub 4}(111) films were grown on Pt(111) and Ru(0001). • Magnetic properties were studied using MOKE and AFM/MFM in ambient conditions. • The films exhibited in-plane magnetic ordering at room temperature. • Differences in magnetic properties were tentatively assigned to structural differences.

  2. Electrooxidation of C{sub 1} to C{sub 3} alcohols with Pt and Pt-Ru sputter deposited interdigitated array electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Choong-Gon [Department of Chemical Engineering, Faculty of Engineering, Hanbat National University, San 16-1, Dukmyeong-dong, Yuseong-gu, Daejeon 305-719 (Korea, Republic of)], E-mail: leecg@hanbat.ac.kr; Ojima, Hiroyuki [Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, Aramaki-Aoba 07, Aoba-ku, Sendai 980-8579 (Japan); Umeda, Minoru [Department of Materials Science and Technology, Faculty of Engineering, Nagaoka University of Technology, Kamitomioka 1603-1, Nagaoka, Niigata 940-2188 (Japan)], E-mail: mumeda@vos.nagaokaut.ac.jp

    2008-02-25

    The electrooxidation of methanol, ethanol, and 2-propanol was investigated with interdigitated array electrodes (IDAEs). The IDAE oxidizes alcohol at the generator and reduces the reaction intermediates produced by the oxidation process at the collector. Thus, the reaction intermediates can be estimated with the IDAE. The IDAE in the present work was made of sputter deposited Pt and Pt-Ru. The use of Ru free and added electrodes provides information on the effect of Ru addition on the alcohol oxidation. Cyclic voltammetric analyses revealed that Ru addition enhances the oxidation currents and reduces the E{sub onset} of the alcohols. The detectable reaction intermediate at the methanol and ethanol oxidation was proton, while the intermediate species was acetone in 2-propnaol oxidation.

  3. ANALISA FAKTOR PENYEBAB KEGAGALAN MESIN GRINDER PADA PROSES PRODUKSI PLASTIC FILM DI PT. MUTIARA HEXAGON

    Directory of Open Access Journals (Sweden)

    Imam Hidayat

    2013-10-01

    Full Text Available Bila suatu mesin memiliki tingkat kegagalan yang tinggi, maka perlu dilakukan analisis mengenai  penyebab  –  penyebab  kegagalan  tersebut  hingga  ke  akar  permasalahannya sehingga dapat menentukan tindakan yang sesuai untuk meningkatkan kinerja suatu mesin. PT. Mutiara Hexagon merupakan sebuah perusahaan yang bergerak dibidang industri pembuatan plastik  kemasan.  Dalam  line  pembuatan lembaran film  diperlukan mesin  CPP  (Cast  Poly Propylene Machine dan mesin grinder dalam prosesnya. Pada penelitian yang dilakukan di PT. Mutiara Hexagon, terdapat beberapa kegagalan yang terjadi pada mesin grinder pada proses produksi plastic film, sehingga menyebabkan seluruh line pada divisi film mengalami downtime. Tujuan dari penelitian ini adalah untuk melakukan analisa mengenai faktor penyebab kegagalan mesin grinder, penulis melakukan observasi secara langsung dan melihat proses produksi plastic film.Penulis menggunakan metode Failure Effect and Mode Analysis (FMEA dan Fault Tree Analysis (FTA. Penerapan analisis Failure Effect and  Mode Analysis (FMEA dapat menentukan sejauh mana tingkat kegagalan terjadi. Dari hasil analisis FMEA kemudian dapat dilanjutkan dengan menggunakan Fault Tree Analysis (FTA guna mengetahui lebih lanjut penyebab-penyebab dasar suatu kegagalan.Dari hasil perhitungan nilai Risk Priority Number (RPN pada tiap-tiap kegagalan yang terjadi  diantaranya yang  paling  tinggi  adalah kegagalan mesin  grinder rusak  dengan nilai kegagalannya mencapai 120. Kemudian dianalisa penyebab kegagalan tersebut dengan menggunakan metode FTA di dapatkan minimal cut sets yaitu: as grinder patah, katup hisap blower terbuka terlalu besar, kegagalan pada motor blower, baut pada dudukan pisau patah, pisau tumpul dan human error. Berdasarkan nilai probabilitas masing-masing cut set didapatkan nilai probabilitas kegagalan grinder periode 1 Juni 2012 -1 Juni 2013 mencapai 60%.

  4. Nanocrystalline SnO2-Pt Thick Film Gas Sensor for Air Pollution Applications

    Directory of Open Access Journals (Sweden)

    M. H. Shahrokh Abadi

    2011-02-01

    Full Text Available A series of xSnO2(1-xPt nanopowder (x = 1, 0.995, 0.99, 0.985, 0.98 was calcinated at 950 °C, mixed with an organic vehicle, printed on premade silver electrodes, and fired at 650 °C. Microstructural, morphological, and elemental properties of the mixed powders and films were determined by using XRD, TEM, SEM, and EDX. Samples were exposed to ethyl alcohol, xylene, methanol, isopropanol, acetone, isobutane, and truck exhaust fumes, at wide range of operating temperature, and sensitivity as well as response time of the samples were measured and compared with Taguchi Gas Sensors of TGS2602 (air contaminants, TGS3870 (CO, and TGS4160 (CO2. It was discovered that crystallite sizes of SnO2 powder and response times of samples are decreased with increasing Pt contents, whilst sensitivity is increased. Measurements are shown that 1 wt.% Pt loaded sensor, operating at 300 °C, can detect exhaust gas with high differentiating between the applied gases.

  5. Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

    2011-01-01

    When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

  6. Transport Properties of LCMO Granular Films Deposited by the Pulsed Electron Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    CHEN Leiming; XU Bin; ZHANG Yan; CHEN Zhenping

    2011-01-01

    By finely controlling the deposition parameters in the pulsed electron deposition process,granular La2/3Ca1/3MnO3 (LCMO) film was grown on silicon substrates.The substrate temperature,ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film,resulting in different morphologies of the samples.Transport properties of the obtained granular films,especially the magnetoresistance (MR),were studied.Prominent low-field MR was observed in all samples,indicating the forming of grain boundaries in the sample.The low-field MR show great sensitive to the morphology evolution,which reaches the highest value of about 40% for the sample with the grain size of about 250 nm.More interestingly,positive-MR (p-MR) was also detected above 300 K when low magnetic field applying,whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla.Instead of the spinpolarized tunneling process being commonly regarded as a responsible reason,lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR

  7. Deposition and Tribological Properties of Sulfur-Doped DLC Films Deposited by PBII Method

    Directory of Open Access Journals (Sweden)

    Nutthanun Moolsradoo

    2010-01-01

    Full Text Available Sulfur-doped diamond-like carbon films (S-DLC fabricated from C2H2 and SF6 mixtures were used to study the effects of sulfur content and negative pulse bias voltage on the deposition and tribological properties of films prepared by plasma-based ion implantation (PBII. The structure and relative concentration of the films were analyzed by Raman spectroscopy and Auger electron spectroscopy. Hardness and elastic modulus of films were measured by nanoindentation hardness testing. Tribological characteristics of films were performed using a ball-on-disk friction tester. The results indicate that with the increasing sulfur content, the hardness and elastic modulus decrease. Additionally, by changing the negative pulse bias voltage from 0 kV to −5 kV, the hardness and elastic modulus increase, while the friction coefficient and specific wear rate tends to decrease. Moreover, at a negative pulse bias voltage of −5 kV and flow-rate ratio of 1 : 2, there is considerable improvement in friction coefficient of 0.05 under ambient air is due to the formation of a transfer films on the interface. The decrease in the friction coefficient of films doped with 4.9 at.% sulfur is greater under high vacuum (0.03 than under ambient air (>0.1.

  8. Growth modes of pentacene films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

    2011-01-01

    Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

  9. Morphology evolution in spinel manganite films deposited from an aqueous solution

    International Nuclear Information System (INIS)

    Ko, Song Won; Li, Jing; Trolier-McKinstry, Susan

    2012-01-01

    Spinel manganite films were deposited by the spin spray technique at low deposition temperatures ( 1000, agglomeration of small particles was dominant, which suggests that homogeneous nucleation is dominant during deposition. Heterogeneous nucleation was critical to obtain dense films. - Highlights: ► Film microstructure depends on supersaturation. ► Heterogeneous nucleation induces dense and continuous films. ► The spin spray technique enables use of a variety of substrates.

  10. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  11. Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

    International Nuclear Information System (INIS)

    Kassim, Anuar; Wee Tee, Tan; Soon Min, Ho.; Nagalingam, Saravanan

    2010-01-01

    Cu 4 SnS 4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. (author).

  12. Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

    Science.gov (United States)

    Ruffino, F.; Torrisi, V.

    2017-11-01

    Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

  13. Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon

    NARCIS (Netherlands)

    Savaniu, C.; Arnautu, A.; Cobianu, C.; Craciun, G.; Flueraru, C.; Zaharescu, M.; Parlog, C.; Paszti, F.; van den Berg, Albert

    1999-01-01

    SnO2 sol-gel derived thin films doped simultaneously with Pt and Sb are obtained and reported for the first time. The Sn sources were tin(IV) ethoxide or tin(II) ethylhexanoate, while hexachloroplatinic acid (H2PtCl6) and antimony chloride (SbCl3) were used as platinum and antimony sources,

  14. Crystal structures of sol-gel deposited zirconia thin films

    International Nuclear Information System (INIS)

    Bell, J.M.; Cheary, R.W.; Rice, M.; Ben-Nissan, B.; Cocking, J.L.; Johnstone, G.R.

    1992-01-01

    The authors reports on the crystal structure of zirconia thin films by high temperature x-ray diffraction. The films were deposited by sol-gel processing onto polished stainless steel substrates, and dried at 200 deg C. X-ray diffraction at temperatures between 400 deg C and 800 deg C was carried out using an APEX diffractometer with a position sensitive detector. Previous results indicated that there was a transformation between the tetragonal phase and the monoclinic phase at approximately 770 deg C. Two experiments have been carried out: temperature runs, where the structure evolution is studied as a function of temperature; and time evolution of the structure at fixed temperatures. The results for both experiments, including structural analysis of the different phases found in the thin zirconia films and an analysis of the kinetics of the phase transformation(s) from the time evolution work are presented. This will include a comparison with theories of nucleation and crystallisation in single element films. Impurity phases introduced by interaction of the zirconia with the substrate have been observed, and the effect of increasing annealing time on the substrate-film interaction will also be discussed. 17 refs., 1 tab., 3 figs

  15. Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

    1998-01-01

    Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

  16. Short review on chemical bath deposition of thin film and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Mugle, Dhananjay, E-mail: dhananjayforu@gmail.com; Jadhav, Ghanshyam, E-mail: ghjadhav@rediffmail.com [Depertment of Physics, Shri Chhatrapati Shivaji College, Omerga-413606 (India)

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  17. Vacuum deposition and pulsed modification of Ge thin films on Si. Structure and photoluminescence

    International Nuclear Information System (INIS)

    Batalov, R.I.; Bayazitov, R.M.; Novikov, G.A.; Shustov, V.A.; Bizyaev, D.A.; Gajduk, P.I.; Ivlev, G.D.; Prokop'ev, S.L.

    2013-01-01

    Vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited films by powerful laser or ion beams was performed. The dependence of the structure and optical properties of Ge/Si films on parameters of pulsed treatments was investigated. Optimum parameters of deposition and pulsed treatments resulting into light emitting monocrystalline Ge/Si layers are determined. (authors)

  18. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  19. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    OpenAIRE

    Bakrania, Smitesh D.; Wooldridge, Margaret S.

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition meth...

  20. Optimum deposition, structure, and properties of tantalum oxide films

    International Nuclear Information System (INIS)

    Lin, Y.C.

    1985-01-01

    Amorphous, ductile, and uniform Ta 2 O 5 films that acted as diffusion barriers were developed by sputter depositing Ta metal on Al single crystals (99.99%) and subsequently anodizing these thin films. The morphology, microstructure, composition and properties were characterized by scanning and transmission electron microscopy, surface and Fourier transform infrared spectroscopy, X-ray diffraction, and fluorescence. Superior corrosion resistance in a water saturated Cl 2 atmosphere was provided by Ta 2 O 5 coating on Al single crystal substrates but not on Al alloys. The strong Ta-O bond, the non-porous nature of the film and good adhesion to the substrate are attributed to the outstanding corrosion resistance of these oxide coatings. Al alloy surfaces are not protected, since the anodic film formed over grain boundaries, processing lines and emergent precipitates is poorly adherent, thus providing loci for corrosion. These problems were eliminated by casting a 400 A layer of tantalum oxyhydroxide polymer from ethanol solution onto Al substrate and curing to a Ta 2 O 5 layer that effectively resisted attack by wet Cl 2 . The mechanical properties of Ta 2 O 5 films on Al alloys were studied at various pH's by in-situ fatigue loading coupled with electrochemical measurements of corrosion potential and corrosion current. These results indicate the fatigue resistance of this oxide film effectively protects the underlying metal from strong HCl solution attack. The very unusual ductility and high corrosion resistance of Ta 2 O 5 films could be related to the graphite-like structure that exists in the amorphous state of this oxide

  1. Pulsed Polarization-Based NOx Sensors of YSZ Films Produced by the Aerosol Deposition Method and by Screen-Printing.

    Science.gov (United States)

    Exner, Jörg; Albrecht, Gaby; Schönauer-Kamin, Daniela; Kita, Jaroslaw; Moos, Ralf

    2017-07-26

    The pulsed polarization technique on solid electrolytes is based on alternating potential pulses interrupted by self-discharge pauses. Since even small concentrations of nitrogen oxides (NO x ) in the ppm range significantly change the polarization and discharge behavior, pulsed polarization sensors are well suited to measure low amounts of NO x . In contrast to all previous investigations, planar pulsed polarization sensors were built using an electrolyte thick film and platinum interdigital electrodes on alumina substrates. Two different sensor layouts were investigated, the first with buried Pt electrodes under the electrolyte and the second one with conventional overlying Pt electrodes. Electrolyte thick films were either formed by aerosol deposition or by screen-printing, therefore exhibiting a dense or porous microstructure, respectively. For screen-printed electrolytes, the influence of the electrolyte resistance on the NO x sensing ability was investigated as well. Sensors with buried electrodes showed little to no response even at higher NO x concentrations, in good agreement with the intended sensor mechanism. Electrolyte films with overlying electrodes, however, allowed the quantitative detection of NO x . In particular, aerosol deposited electrolytes exhibited high sensitivities with a sensor output signal Δ U of 50 mV and 75 mV for 3 ppm of NO and NO₂, respectively. For screen-printed electrolytes, a clear trend indicated a decrease in sensitivity with increased electrolyte resistance.

  2. Roughness evolution in Ga doped ZnO films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liu Yunyan; Cheng Chuanfu; Yang Shanying; Song Hongsheng; Wei Gongxiang; Xue Chengshan; Wang Yongzai

    2011-01-01

    We analyze the morphology evolution of the Ga doped ZnO(GZO) films deposited on quartz substrates by a laser deposition system. The surface morphologies of the film samples grown with different times are measured by the atomic force microscope, and they are analyzed quantitatively by using the image data. In the initial stage of the growth time shorter than 8 min, our analysis shows that the GZO surface morphologies are influenced by such factors as the random fluctuations, the smoothening effects in the deposition, the lateral strain and the substrate. The interface width uw(t) and the lateral correlation length ξ(t) at first decrease with deposition time t. For the growth time larger than 8 min, w(t) and ξ(t) increase with time and it indicates the roughening of the surface and the surface morphology exhibits the fractal characteristics. By fitting data of the roughness w(t) versus deposition time t larger than 4 min to the power-law function, we obtain the growth exponent β is 0.3; and by the height-height correlation functions of the samples to that of the self-affine fractal model, we obtain the value of roughness exponent α about 0.84 for all samples with different growth time t.

  3. X-ray diffraction and surface acoustic wave analysis of BST/Pt/TiO{sub 2}/SiO{sub 2}/Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mseddi, Souhir; Hedi Ben Ghozlen, Mohamed [Laboratoire de Physique des Materiaux, Faculte des Sciences de Sfax, Universite de Sfax, 3018 Sfax (Tunisia); Njeh, Anouar [Unite de Physique, Informatique et Matematiques, Faculte des Sciences de Gafsa, Universite de Gafsa, 2112 Gafsa (Tunisia); Schneider, Dieter [Fraunhofer-Institut fuer Material- und Strahltechnologie, Winterbergstrasse 28, 1277 Dresden (Germany); Fuess, Hartmut [Institute of Materials Science, University of Technology, Petersenstr.23, 64287 Darmstadt (Germany)

    2011-11-15

    High dielectric constant and electrostriction property of (Ba, Sr)Ti0{sub 3} (BST) thin films result in an increasing interest for dielectric devices and microwave acoustic resonator. Barium strontium titanate (Ba{sub 0.645}Sr{sub 0.355}TiO{sub 3}) films of about 300 nm thickness are grown on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(001) substrates by rf magnetron sputtering deposition techniques. X-ray diffraction is applied for the microstructural characterization. The BST films exhibit a cubic perovskite structure with a dense and smooth surface. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in the BST films. Young's modulus E and the Poisson ratio {nu} of TiO{sub 2,} Pt and BST films in different propagation directions are derived from the measured dispersion curves. Estimation of BST elastics constants are served in SAW studies. Impact of stratification process on SAW, propagating along [100] and [110] directions of silicon substrate, has been interpreted on the basis of ordinary differential equation (ODE) and stiffness matrix method (SMM). A good agreement is observed between experimental and calculated dispersion curves. The performed calculations are strongly related to the implemented crystallographic data of each layer. Dispersion curves are found to be sensitive to the SAW propagation direction and the stratification process for the explored frequency ranges 50-250 MHz, even though it corresponds to a wave length clearly higher than the whole films thickness.

  4. Liquid films and droplet deposition in a BWR fuel element

    International Nuclear Information System (INIS)

    Damsohn, M.

    2011-01-01

    In the upper part of boiling water reactors (BWR) the flow regime is dominated by a steam-water droplet flow with liquid films on the nuclear fuel rod, the so called (wispy) annular flow regime. The film thickness and liquid flow rate distribution around the fuel rod play an important role especially in regard to so called dryout, which is the main phenomenon limiting the thermal power of a fuel assembly. The deposition of droplets in the liquid film is important, because this process sustains the liquid film and delays dryout. Functional spacers with different vane shapes have been used in recent decades to enhance droplet deposition and thus create more favorable conditions for heat removal. In this thesis the behavior of liquid films and droplet deposition in the annular flow regime in BWR bundles is addressed by experiments in an adiabatic flow at nearly ambient pressure. The experimental setup consists of a vertical channel with the cross-section resembling a pair of neighboring subchannels of a fuel rod bundle. Within this double subchannel an annular flow is established with a gas-water mixture. The impact of functional spacers on the annular flow behavior is studied closely. Parameter variations comprise gas and liquid flow rates, gas density and spacer shape. The setup is instrumented with a newly developed liquid film sensor that measures the electrical conductance between electrodes flush to the wall with high temporal and spatial resolution. Advanced post-processing methods are used to investigate the dynamic behavior of liquid films and droplet deposition. The topic is also assessed numerically by means of single-phase Reynolds-Averaged-Navier-Stokes CFD simulations of the flow in the gas core. For this the commercial code STAR-CCM+ is used coupled with additional models for the liquid film distribution and droplet motion. The results of the experiments show that the liquid film is quite evenly distributed around the circumference of the fuel rods. The

  5. Morphological Characteristics of Au Films Deposited on Ti: A Combined SEM-AFM Study

    Directory of Open Access Journals (Sweden)

    Francesco Ruffino

    2018-03-01

    Full Text Available Deposited Au films and coatings are, nowadays, routinely used as active or passive elements in several innovative electronic, optoelectronic, sensing, and energy devices. In these devices, the physical properties of the Au films are strongly determined by the films nanoscale structure. In addition, in these devices, often, a layer of Ti is employed to promote adhesion and, so, influencing the nanoscale structure of the deposited Au film. In this work, we present experimental analysis on the nanoscale cross-section and surface morphology of Au films deposited on Ti. In particular, we sputter-deposited thick (>100 nm thickness Au films on Ti foils and we used Scanning Electron Microscopy to analyze the films cross-sectional and surface morphology as a function of the Au film thickness and deposition angle. In addition, we analyzed the Au films surface morphology by Atomic Force Microscopy which allowed quantifying the films surface roughness versus the film thickness and deposition angle. The results establish a relation between the Au films cross-sectional and surface morphologies and surface roughness to the film thickness and deposition angle. These results allow setting a general working framework to obtain Au films on Ti with specific morphological and topographic properties for desired applications in which the Ti adhesion layer is needed for Au.

  6. Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

    Science.gov (United States)

    Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

    2018-04-01

    Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

  7. Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

    2001-12-01

    cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

  8. Structure and properties of TiC, VC, and TiC/VC thin films deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Krzanowski, J.E.; Leuchtner, R.E.

    1996-01-01

    A study has been conducted on the mechanical, tribological and chemical properties of pulsed laser deposited (PLD) TiC, VC and TiC/VC thin films. The TiC films were deposited at 375 C and 5 mTorr Ar, while the TiC/VC films were deposited from a composite target at 475 C at pressures of base vacuum and 50 mTorr Ar. XRD analysis revealed the films had the expected B1 structure, although XPS analysis showed a significant oxygen content. Tribological studies were conducted using a ball-on-disk test, and the wear behavior depended on the surface condition and film composition. One TiC/VC film exhibited little wear but caused significant ball wear, indicating mixed carbide films are promising candidates for wear-resistant coatings

  9. Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-01-01

    Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  10. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  11. ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

    2016-08-01

    Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

  12. Manipulating magnetic anisotropy of the ultrathin Co{sub 2}FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Wen, F.S., E-mail: wenfsh03@126.com [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Wang, W.H. [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China); Hu, W.T.; Liu, Z.Y. [State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2013-12-15

    The ultrathin films of Co{sub 2}FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions.

  13. Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

    International Nuclear Information System (INIS)

    Wen, F.S.; Xiang, J.Y.; Hao, C.X.; Zhang, F.; Lv, Y.F.; Wang, W.H.; Hu, W.T.; Liu, Z.Y.

    2013-01-01

    The ultrathin films of Co 2 FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films. - Highlights: • Different Pt orientations lead to different magnetic anisotropy for sandwiched ultrathin CFA films. • The Pt (111) orientation favors the perpendicular anisotropy for CFA layer. • Temperature and thickness-induced spin reorientation transitions were investigated in sandwiched ultrathin CFA films. • 0.8 nm CFA film is good candidate as electrode in magnetic tunnel junctions

  14. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  15. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  16. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  17. Characterization of chemical vapour deposited diamond films: correlation between hydrogen incorporation and film morphology and quality

    International Nuclear Information System (INIS)

    Tang, C J; Neves, A J; Carmo, M C

    2005-01-01

    In order to tailor diamond synthesized through chemical vapour deposition (CVD) for different applications, many diamond films of different colours and variable quality were deposited by a 5 kW microwave plasma CVD reactor under different growth conditions. The morphology, quality and hydrogen incorporation of these films were characterized using scanning electron microscopy (SEM), Raman and Fourier-transform infrared (FTIR) spectroscopy, respectively. From this study, a general trend between hydrogen incorporation and film colour, morphology and quality was found. That is, as the films sorted by colour gradually become darker, ranging from white through grey to black, high magnification SEM images illustrate that the smoothness of the well defined crystalline facet gradually decreases and second nucleation starts to appear on it, indicating gradual degradation of the crystalline quality. Correspondingly, Raman spectra evidence that the diamond Raman peak at 1332 cm -1 becomes broader and the non-diamond carbon band around 1500 cm -1 starts to appear and becomes stronger, confirming increase of the non-diamond component and decrease of the phase purity of the film, while FTIR spectra show that the CH stretching band and the two CVD diamond specific peaks around 2830 cm -1 rise rapidly, and this indicates that the total amount of hydrogen incorporated into the film increases significantly

  18. Effect of performance of Zr-Y alloy target on thin film deposition technology

    International Nuclear Information System (INIS)

    Pan Qianfu; Liu Chaohong; Jiang Mingzhong; Yin Changgeng

    2011-01-01

    Yttria-stabilized zirconia (YSZ) films are synthesized on corrosion resistant plates by pulsed bias arc ion plating. The arc starting performance and the stability of thin film deposition is explored by improving the uniformity and compactibility of Zr-Y alloy target. The property of Zr-Y alloy target and depositional thin films were measured with the optical microscope, scanning electron microscope, X-ray diffractometer. The result shows that the target with hot rolling and annealing has a good arc starting performance and stability of thin film deposition, and the depositional thin films made of Yttria and amorphous zirconia are homogeneous and compact. (authors)

  19. Tribological behavior of in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films

    International Nuclear Information System (INIS)

    Guo Yanbao; Wang Deguo; Liu Shuhai

    2010-01-01

    Multilayer polyelectrolyte films containing silver ions were obtained by molecular deposition method on a glass plate or a quartz substrate. The in situ Ag nanoparticles were synthesized in the multilayer polyelectrolyte films which were put into fresh NaBH 4 aqueous solution. The structure and surface morphology of composite molecular deposition films were observed by UV-vis spectrophotometer, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Tribological characteristic was investigated by AFM and micro-tribometer. It was found that the in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films have lower coefficient of friction and higher anti-wear life than pure polyelectrolyte molecular deposition films.

  20. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    International Nuclear Information System (INIS)

    Mayo, B.

    1998-01-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

  1. CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media

    Science.gov (United States)

    Szívós, János; Pothorszky, Szilárd; Soltys, Jan; Serényi, Miklós; An, Hongyu; Gao, Tenghua; Deák, András; Shi, Ji; Sáfrán, György

    2018-03-01

    CoPt thin films as possible candidates for Bit Patterned magnetic Media (BPM) were prepared and investigated by electron microscopy techniques and magnetic measurements. The structure and morphology of the Direct Current (DC) sputtered films with N incorporation were revealed in both as-prepared and annealed state. Nanopatterning of the samples was carried out by means of Radio Frequency (RF) plasma etching through a Langmuir-Blodgett film of silica nanospheres that is a fast and high throughput technique. As a result, the samples with hexagonally arranged 100 nm size separated dots of fct-phase CoPt were obtained. The influence of the order of nanopatterning and anneling on the nanostructure formation was revealed. The magnetic properties of the nanopatterned fct CoPt films were investigated by Vibrating Sample Magnetometer (VSM) and Magnetic Force Microscopy (MFM). The results show that CoPt thin film nanopatterned by means of the RF plasma etching technique is promising candidate to a possible realization of BPM. Furthermore, this technique is versatile and suitable for scaling up to technological and industrial applications.

  2. Dense Fe cluster-assembled films by energetic cluster deposition

    International Nuclear Information System (INIS)

    Peng, D.L.; Yamada, H.; Hihara, T.; Uchida, T.; Sumiyama, K.

    2004-01-01

    High-density Fe cluster-assembled films were produced at room temperature by an energetic cluster deposition. Though cluster-assemblies are usually sooty and porous, the present Fe cluster-assembled films are lustrous and dense, revealing a soft magnetic behavior. Size-monodispersed Fe clusters with the mean cluster size d=9 nm were synthesized using a plasma-gas-condensation technique. Ionized clusters are accelerated electrically and deposited onto the substrate together with neutral clusters from the same cluster source. Packing fraction and saturation magnetic flux density increase rapidly and magnetic coercivity decreases remarkably with increasing acceleration voltage. The Fe cluster-assembled film obtained at the acceleration voltage of -20 kV has a packing fraction of 0.86±0.03, saturation magnetic flux density of 1.78±0.05 Wb/m 2 , and coercivity value smaller than 80 A/m. The resistivity at room temperature is ten times larger than that of bulk Fe metal

  3. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  4. Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

    International Nuclear Information System (INIS)

    Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

    2006-01-01

    Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

  5. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    International Nuclear Information System (INIS)

    Gupta, Sushant; Arjunan, Arul Chakkaravarthi; Deshpande, Sameer; Seal, Sudipta; Singh, Deepika; Singh, Rajiv K.

    2009-01-01

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166 o . The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  6. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Sushant, E-mail: sushant3@ufl.ed [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States); Arjunan, Arul Chakkaravarthi [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Deshpande, Sameer; Seal, Sudipta [Advanced Material Processing and Analysis Center, University of Central Florida, Orlando, Florida 32816 (United States); Singh, Deepika [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Singh, Rajiv K. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2009-06-30

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166{sup o}. The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  7. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  8. Microstructure and chemical bonding of DLC films deposited on ACM rubber by PACVD

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Schenkel, M.; Pei, Y.T.; Sánchez-López, J.C.; Hosson, J.Th.M. De

    2011-01-01

    The microstructure and chemical bonding of DLC films prepared by plasma assisted chemical vapor deposition on acrylic rubber (ACM) are studied in this paper. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was used to modify the film

  9. Deposition of superconducting (Cu, C)-Ba-O films by pulsed laser deposition at moderate temperature

    International Nuclear Information System (INIS)

    Yamamoto, Tetsuro; Kikunaga, Kazuya; Obara, Kozo; Terada, Norio; Kikuchi, Naoto; Tanaka, Yasumoto; Tokiwa, Kazuyasu; Watanabe, Tsuneo; Sundaresan, Athinarayanan; Shipra

    2007-01-01

    Superconducting (Cu, C)-Ba-O thin films have been epitaxially grown on (100) SrTiO 3 at a low growth temperature of 500-600 deg. C by pulsed laser deposition. The dependences of their crystallinity and transport properties on preparation conditions have been investigated in order to clarify the dominant parameters for carbon incorporation and the emergence of superconductivity. It has been revealed that the CO 3 content in the films increases with increasing both the parameters of partial pressure of CO 2 during film growth and those of growth rate and enhancement of superconducting properties. The present study has also revealed that the structural and superconducting properties of the (Cu, C)-Ba-O films are seriously deteriorated by the irradiation of energetic particles during deposition. Suppression of the radiation damage is another key for a high and uniform superconducting transition. By these optimizations, a superconducting onset temperature above 50 K and a zero-resistance temperature above 40 K have been realized

  10. X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

    2011-01-01

    Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

  11. Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition

    International Nuclear Information System (INIS)

    Park, Hyeong-Ho; Park, Hyung-Ho; Hill, Ross H.

    2004-01-01

    The ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-doped lead zirconate titanate (PLZT) multilayer films formed by photochemical metal-organic deposition (PMOD) using photosensitive precursors have been characterized. The substitution of La for Pb was reported to induce improved ferroelectric properties, especially fatigue resistance, through the reduction of oxygen vacancies. The relation between La-substitution and the ferroelectric properties was investigated by characterization of the effect of the order of stacking four ferroelectric layers of PZT or PLZT in the multilayer films 4-PZT, PZT/2-PLZT/PZT, PLZT/2-PZT/PLZT, and 4-PLZT. The films with the PLZT layer at the top and bottom showed an improvement in the fatigue resistance. It was revealed that defect dipole such as O vacancy was reduced at the ferroelectric/Pt interface by doping with La. Also, the bottom layer, just on Pt substrate had a significant influence on the surface microstructure and growth orientation of ferroelectric film

  12. Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

    1990-01-01

    Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

  13. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2007-01-01

    Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

  14. Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

    Indian Academy of Sciences (India)

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

  15. Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films.

    Science.gov (United States)

    Wagner, Stefan; Yim, Chanyoung; McEvoy, Niall; Kataria, Satender; Yokaribas, Volkan; Kuc, Agnieszka; Pindl, Stephan; Fritzen, Claus-Peter; Heine, Thomas; Duesberg, Georg S; Lemme, Max C

    2018-05-23

    Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe 2 ), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe 2 films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe 2 films grown by thermally assisted conversion of platinum at a complementary metal-oxide-semiconductor (CMOS)-compatible temperature of 400 °C. We report high negative gauge factors of up to -85 obtained experimentally from PtSe 2 strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe 2 membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe 2 as a very promising candidate for future NEMS applications, including integration into CMOS production lines.

  16. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  17. Thin solid films deposited by pulsed laser ablating spray

    International Nuclear Information System (INIS)

    Song Guangle

    2002-01-01

    The fabricating technique of thin solid films deposited by pulsed laser ablating spray is a new technique. The background from which it came into being and the process of its evolution were briefly described. According to relative documents, basic principle of the technique was dwelt on. Based on the latest documents, the status quo, including the studying abroad and home, was discussed in detail. The advantages, shortcomings, prospect of its utility, the significance of studying as well as critic problems were summarized. Some proposal was suggested

  18. Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

    International Nuclear Information System (INIS)

    Purohit, Viswas; Mielczarski, Ela; Mielczarski, Jerzy A.; Akesso, Laurent

    2013-01-01

    A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O

  19. Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

    Energy Technology Data Exchange (ETDEWEB)

    Purohit, Viswas, E-mail: vishwas.purohit@gmail.com [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Mielczarski, Ela; Mielczarski, Jerzy A. [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Akesso, Laurent [Teer Coatings Ltd., Droitwich, Worcestershire WR9 9AS (United Kingdom)

    2013-09-16

    A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O.

  20. Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3

    International Nuclear Information System (INIS)

    Kim, Hyo Kyeom; Kim, Ju Youn; Park, Jin Yong; Kim, Yang Do; Kim, Young Do; Jeon, Hyeong Tag; Kim, Won Mok

    2002-01-01

    TiN films were deposited by using the metalorganic atomic layer deposition (MOALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as the titanium precursor and ammonia (NH 3 ) as the reactant gas. Two saturated TiN film growth regions were observed in the temperature ranges from 175 and 190 .deg. C and from 200 and 210 .deg. C. TiN films deposited by the MOALD technique showed relatively lower carbon content than films deposited by metalorganic chemical vapor deposition (MOCVD) method. TiN films deposited at around 200 .deg. C under standard conditions showed the resistivity values as low as 500 μΩ-cm, which is about one order lower than the values for TiN films deposited by MOCVD using TDMAT or TDMAT with NH 3 . Also, the carbon incorporation and the resistivity were further decreased with increasing Ar purge time and flow rate. TiN films deposited at temperature below 300 .deg. C showed amorphous characteristics. TiN film deposited on contact holes, about 0.4-μm wide and 0.8-μm deep, by using the MOALD method showed excellent conformal deposition with almost 100% step coverage. This study demonstrates that the processing parameters need to be carefully controlled to optimize the film properties that the processing parameters need to be carefully controlled to optimize the film properties when using the ALD technique and that TiN films deposited by using the MOALD method exhibited excellent film properties compared to those of films deposited by using other CVD methods

  1. Characterization of superconducting thin films deposited by laser ablation. Caracterisation de films minces supraconducteurs deposes par ablation laser

    Energy Technology Data Exchange (ETDEWEB)

    Sentis, M; Delaporte, P [I.M.F.M., 13 - Marseille (FR); Gerri, M; Marine, W [Aix-Marseille-2 Univ., 13-Marseille (FR). Centre Universitaire de Luminy

    1991-05-01

    Thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are deposited by laser ablation on MgO and YSZ substrates. Deposits by infrared (I.R.) Nd: YAG are non stoechiometric. The films having the best superconductor qualities are deposited by ablation with an excimer U.V. laser ({lambda} = 308 nm). These films are epitaxiated with the c axis perpendicular to the substrate. The film quality depends on the substrate temperature, oxygen pressure and cooling speed.

  2. Structure and magnetic properties of L10-FePt thin films on TiN/RuAl underlayers

    International Nuclear Information System (INIS)

    Yang En; Ratanaphan, Sutatch; Zhu Jiangang; Laughlin, David E.

    2011-01-01

    Highly ordered L1 0 FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO 2 in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

  3. Influence of domain structure induced coupling on magnetization reversal of Co/Pt/Co film with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Matczak, Michał [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Schäfer, Rudolf [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Institute for Metallic Materials, PO 270116, D-01171 Dresden (Germany); Dresden University of Technology, Institute for Materials Science, D-01062 Dresden (Germany); Urbaniak, Maciej; Kuświk, Piotr; Szymański, Bogdan; Schmidt, Marek; Aleksiejew, Jacek [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); Stobiecki, Feliks, E-mail: Feliks.Stobiecki@ifmpan.poznan.pl [Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań (Poland); NanoBioMedical Centre, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

    2017-01-15

    A magnetic multilayer of substrate/Pt-15 nm/Co-0.8 nm/Pt-wedge 0–7 nm/Co-0.6 nm/Pt-2 nm structure is characterized by a perpendicular anisotropy of the Co layers and by graded interlayer coupling between them. Using magnetooptical Kerr microscopy we observed a distinct influence of magnetic domains in one Co layer on the nucleation field and positions of nucleation sites of reversed domains in the second Co layer. For sufficiently strong interlayer coupling a replication of magnetic domains from the magnetically harder layer to the magnetically softer layer is observed. - Highlights: • Co/Pt-wedge/Co layered film is characterized by a gradient of interlayer coupling. • Magnetic field controls propagation of straight domain wall. • Replication of magnetic domains in multilayers with strong ferromagnetic coupling. • Coupling induced by domains influences magnetization reversal of spin valves.

  4. Double-layered perpendicular magnetic recording media of granular-type FePt-MgO films

    International Nuclear Information System (INIS)

    Zhang Zhengang; Singh, Amarendra K.; Yin Jinhua; Perumal, A.; Suzuki, Takao

    2005-01-01

    The recording performance of double-layered granular-type FePt-MgO perpendicular magnetic recording media fabricated onto glass discs by sputtering is investigated. The (0 0 1)-textured FePt granular films are obtained by annealing FePt/MgO multilayers. Three different multilayer structures are compared in their magnetic properties and recording SNR performances. To evaluate thermal stability property of these granular-type FePt disks, the time-dependent magnetic force microscope (MFM) signal from the written bits on one of these disks is recorded in the temperature range 25-200 degree sign C. The signal decay at high observation temperature is interpreted based on the temperature dependence of magnetic anisotropy (K u )

  5. Fluctuation fields and medium noise in CoCrTa and CoCrPt films

    International Nuclear Information System (INIS)

    Yamanaka, K.; Yamamoto, T.; Tanahashi, K.; Inaba, N.; Hosoe, Y.; Uesaka, Y.; Futamoto, M.

    1995-01-01

    The correlation between magnetic viscosity and medium noise in CoCrTa and CoCrPt longitudinal thin-film media was investigated by measuring the time dependence of the remanence coercivity H r and the read/write characteristics. The media were prepared by dc magnetron sputtering under various conditions. Fluctuation fields H f of the magnetic viscosity at H/H r =1 were obtained from the slopes of the H r versus ln t plots. The medium noise decreases with kT/H f (the product of activation volume and saturation magnetization per unit volume), and is independent of other magnetic properties, such as the coercivity and the remanent magnetization per unit area. The medium noise thus primarily depends on the size of the minimum unit of the magnetic moment in reversal. (orig.)

  6. Eletroquímica do citocromo C em filme nanoestruturado \\"dendrímero-Pt\\" ativado

    OpenAIRE

    Claudia do Amaral Razzino

    2013-01-01

    Esta tese aborda a utilização de um filme fino nanoestruturado de dendrímero-Pt, eletroquimicamente ativado, no estudo da eletroquímica do citocromo C. O objetivo do estudo de proteínas redox em eletrodos é elucidar os mecanismos de transferência de elétrons das proteínas que estão envolvidas em processos redox biológicos, como a fotossíntese e a cadeia respiratória, e a exploração de enzimas redox para o desenvolvimento de biossensores eletroquímicos, células de biocombustíveis e aplicações ...

  7. Study of robust thin film PT-1000 temperature sensors for cryogenic process control applications

    Science.gov (United States)

    Ramalingam, R.; Boguhn, D.; Fillinger, H.; Schlachter, S. I.; Süßer, M.

    2014-01-01

    In some cryogenic process measurement applications, for example, in hydrogen technology and in high temperature superconductor based generators, there is a need of robust temperature sensors. These sensors should be able to measure the large temperature range of 20 - 500 K with reasonable resolution and accuracy. Thin film PT 1000 sensors could be a choice to cover this large temperature range. Twenty one sensors selected from the same production batch were tested for their temperature sensitivity which was then compared with different batch sensors. Furthermore, the sensor's stability was studied by subjecting the sensors to repeated temperature cycles of 78-525 K. Deviations in the resistance were investigated using ice point calibration and water triple point calibration methods. Also the study of directional oriented intense static magnetic field effects up to 8 Oersted (Oe) were conducted to understand its magneto resistance behaviour in the cryogenic temperature range from 77 K - 15 K. This paper reports all investigation results in detail.

  8. Damping constant of Co/Pt multilayer thin-film media

    Energy Technology Data Exchange (ETDEWEB)

    Fujita, N. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan); Inaba, N. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)], E-mail: inaba@yz.yamagata-u.ac.jp; Kirino, F. [National University of Fine Arts and Music, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8577 (Japan); Igarashi, S.; Koike, K.; Kato, H. [Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)

    2008-11-15

    Gilbert's damping constants, {alpha}, of Co(t{sub Co})/Pt (1.4 nm) multilayer thin films are investigated by Q-band FMR analysis. {alpha} is calculated from the resonance width of the FMR spectrum. With decreasing t{sub Co}, the {alpha} value decreases from 0.034 (t{sub Co}=8.7 nm) to 0.023 (t{sub Co}=1.8 nm), and then increases to 0.037 (t{sub Co}=1.0 nm). The decrease of {alpha} with t{sub Co}>1.8 nm is probably due to the eddy current loss effects. The increase of {alpha} with t{sub Co}<1.8 nm would be caused by the increase of the distortion between the Co and the Pt layers at the interface. When the magnetic field direction was changed from {theta}=90 deg. (parallel to the specimen) to {theta}=0 deg. (perpendicular to the specimen), the {alpha} of all the specimens increased, and a sharp step in {alpha} was observed around {theta}=40 deg., where the {alpha} has the maximum value.

  9. Damping constant of Co/Pt multilayer thin-film media

    International Nuclear Information System (INIS)

    Fujita, N.; Inaba, N.; Kirino, F.; Igarashi, S.; Koike, K.; Kato, H.

    2008-01-01

    Gilbert's damping constants, α, of Co(t Co )/Pt (1.4 nm) multilayer thin films are investigated by Q-band FMR analysis. α is calculated from the resonance width of the FMR spectrum. With decreasing t Co , the α value decreases from 0.034 (t Co =8.7 nm) to 0.023 (t Co =1.8 nm), and then increases to 0.037 (t Co =1.0 nm). The decrease of α with t Co >1.8 nm is probably due to the eddy current loss effects. The increase of α with t Co <1.8 nm would be caused by the increase of the distortion between the Co and the Pt layers at the interface. When the magnetic field direction was changed from θ=90 deg. (parallel to the specimen) to θ=0 deg. (perpendicular to the specimen), the α of all the specimens increased, and a sharp step in α was observed around θ=40 deg., where the α has the maximum value

  10. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

    International Nuclear Information System (INIS)

    Shams, Q.A.

    1988-01-01

    Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

  11. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Chang, Wen-Sheng; Wu, Ching-Chen; Jeng, Ming-Shan; Cheng, Kong-Wei; Huang, Chao-Ming; Lee, Tai-Chou

    2010-01-01

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS 2 and/or AgIn 5 S 8 crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 μm, 3.73 x 10 -3 and 4.98 x 10 4 Ω cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm -2 was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K 2 SO 3 and 0.35 M Na 2 S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm -2 ). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  12. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wen-Sheng [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Wu, Ching-Chen [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China); Jeng, Ming-Shan [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Cheng, Kong-Wei [Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Huang, Chao-Ming [Department of Environmental Engineering, Kun Shan University, 949 Da Wan Road, Yung-Kang City, Tainan Hsien 710, Taiwan (China); Lee, Tai-Chou, E-mail: chmtcl@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China)

    2010-04-15

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS{sub 2} and/or AgIn{sub 5}S{sub 8} crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 {mu}m, 3.73 x 10{sup -3} and 4.98 x 10{sup 4} {Omega} cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm{sup -2} was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K{sub 2}SO{sub 3} and 0.35 M Na{sub 2}S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm{sup -2}). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  13. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  14. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

    2010-01-01

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

  15. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  16. Visible light active TiO{sub 2} films prepared by electron beam deposition of noble metals

    Energy Technology Data Exchange (ETDEWEB)

    Hou Xinggang, E-mail: hou226@163.co [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Ma Jun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Liu Andong [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Dejun; Huang Meidong; Deng Xiangyun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China)

    2010-03-15

    TiO{sub 2} films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO{sub 2} films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO{sub 2} is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO{sub 2} films by this method is affected by the concentration of impregnating solution.

  17. Deposition of Nanostructured Thin Film from Size-Classified Nanoparticles

    Science.gov (United States)

    Camata, Renato P.; Cunningham, Nicholas C.; Seol, Kwang Soo; Okada, Yoshiki; Takeuchi, Kazuo

    2003-01-01

    Materials comprising nanometer-sized grains (approximately 1_50 nm) exhibit properties dramatically different from those of their homogeneous and uniform counterparts. These properties vary with size, shape, and composition of nanoscale grains. Thus, nanoparticles may be used as building blocks to engineer tailor-made artificial materials with desired properties, such as non-linear optical absorption, tunable light emission, charge-storage behavior, selective catalytic activity, and countless other characteristics. This bottom-up engineering approach requires exquisite control over nanoparticle size, shape, and composition. We describe the design and characterization of an aerosol system conceived for the deposition of size classified nanoparticles whose performance is consistent with these strict demands. A nanoparticle aerosol is generated by laser ablation and sorted according to size using a differential mobility analyzer. Nanoparticles within a chosen window of sizes (e.g., (8.0 plus or minus 0.6) nm) are deposited electrostatically on a surface forming a film of the desired material. The system allows the assembly and engineering of thin films using size-classified nanoparticles as building blocks.

  18. Highly porous ZnS microspheres for superior photoactivity after Au and Pt deposition and thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Singla, Shilpa; Pal, Bonamali, E-mail: bpal@thapar.edu

    2013-11-15

    Graphical abstract: Highly porous ZnS microsphere of size 2–5 μm having large surface area ca. 173.14 m{sup 2} g{sup −1} exhibits superior photocatalytic activity for the oxidation of 4-nitrophenol under UV light irradiation. The rate of photooxidation has been significantly improved by Au and Pt deposition and after sintering, respectively, due to rapid electron acceptance by metal from photoexcited ZnS and growth of crystalline ZnS phase. - Highlights: • Photoactive ZnS microsphere of size 2–5 μm was prepared by hydrothermal route. • Highly porous cubic spherical ZnS crystals possess a large surface area, 173 m{sup 2} g{sup −1}. • 1 wt% Au and Pt photodeposition highly quenched the photoluminescence at 437 nm. • Sintering and metal loading notably improve the photooxidation rate of 4-nitrophenol. • Pt co-catalyst always exhibits superior photoactivity of ZnS microsphere than Au. - Abstract: This work highlights the enhanced photocatalytic activity of porous ZnS microspheres after Au and Pt deposition and heat treatment at 500 °C for 2 h. Microporous ZnS particles of size 2–5 μm with large surface area 173.14 m{sup 2} g{sup −1} and pore volume 0.0212 cm{sup 3} g{sup −1} were prepared by refluxing under an alkaline medium. Photoluminescence of ZnS at 437 nm attributed to sulfur or zinc vacancies were quenched to 30% and 49%, respectively, after 1 wt% Au and Pt loading. SEM images revealed that each ZnS microparticle consist of several smaller ZnS spheres of size 2.13 nm as calculated by Scherrer's equation. The rate of photooxidation of 4-nitrophenol (10 μM) under UV (125 W Hg arc–10.4 mW/cm{sup 2}) irradiation has been significantly improved by Au and Pt deposition followed by sintering due to better electron capturing capacity of deposited metals and growth of crystalline ZnS phase with less surface defects.

  19. Enhancement of deposition rate at cryogenic temperature in synchrotron radiation excited deposition of silicon film

    International Nuclear Information System (INIS)

    Nara, Yasuo; Sugita, Yoshihiro; Ito, Takashi; Kato, Hiroo; Tanaka, Ken-ichiro

    1989-01-01

    The authors have investigated the synchrotron radiation excited deposition of silicon films on the SiO 2 substrate by using SiH 4 /He mixture gas at BL-12C at Photon Factory. They used VUV light from the multilayer mirror with the center photon energy from 97 to 123eV, which effectively excites L-core electrons of silicon. Substrate temperature was widely varied from -178 degree C to 500 degree C. At -178 degree C, the deposition rate was as high as 400nm/200mAHr (normalized at the storage ring current at 200mA). As increasing the substrate temperature, the deposition rate was drastically decreased. The number of deposited silicon atoms is estimated to be 4 to 50% of incident photons, while the number of photo generated species in the gas phase within the mean free path from the surface is calculated as few as about 10 -3 of incident photons. These experimental results show that the deposition reaction is governed by the dissociation of surface adsorbates by the synchrotron radiation

  20. A high-efficiency solution-deposited thin-film photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

    2008-10-02

    High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  1. Pulsed laser deposition of Cu-Sn-S for thin film solar cells

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

    Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

  2. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.; Gagarin, A. G.; Gaidukov, M. M.; Tumarkin, A. V.; Petrov, P. K.; Alford, N.; Kozyrev, A. B.

    2014-01-01

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally

  3. National implementation of the UNECE convention on long-range transboundary air pollution (effects). Pt. 1. Deposition loads: methods, modelling and mapping results, trends

    Energy Technology Data Exchange (ETDEWEB)

    Gauger, Thomas [Federal Agricultural Research Centre, Braunschweig (DE). Inst. of Agroecology (FAL-AOE); Stuttgart Univ. (Germany). Inst. of Navigation; Haenel, Hans-Dieter; Roesemann, Claus [Federal Agricultural Research Centre, Braunschweig (DE). Inst. of Agroecology (FAL-AOE)

    2008-09-15

    The report on the implementation of the UNECE convention on long-range transboundary air pollution Pt.1, deposition loads (methods, modeling and mapping results, trends) includes the following chapters: Introduction, deposition on air pollutants used for the input for critical loads in exceeding calculations, methods applied for mapping total deposition loads, mapping wet deposition, wet deposition mapping results, mapping dry deposition, dry deposition mapping results, cloud and fog mapping results, total deposition mapping results, modeling the air concentration of acidifying components and heavy metals, agricultural emissions of acidifying and eutrophying species.

  4. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L1{sub 0} ordering by introducing Ag cap-layers

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, S.C. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Tsai, J.L., E-mail: tsaijl@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Chang, Y.C. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lee, H.Y. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan (China)

    2015-11-15

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1{sub 0} ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1{sub 0} ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture.

  5. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L10 ordering by introducing Ag cap-layers

    International Nuclear Information System (INIS)

    Hsiao, S.N.; Wu, S.C.; Liu, S.H.; Tsai, J.L.; Chen, S.K.; Chang, Y.C.; Lee, H.Y.

    2015-01-01

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1 0 ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1 0 ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture

  6. Structural characterization of the nickel thin film deposited by glad technique

    Directory of Open Access Journals (Sweden)

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  7. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

  8. Origin of open recoil curves in L1_0-A1 FePt exchange coupled nanocomposite thin film

    International Nuclear Information System (INIS)

    Goyal, Rajan; Kapoor, Akanksha; Lamba, S.; Annapoorni, S.

    2016-01-01

    Mixed phase FePt systems with intergranular coupling may be looked upon as natural exchange spring systems. The coupling strength between the soft and hard phase in these systems can be analyzed using recoil curves. However, the origin of open recoil curves depicting the breakdown of exchange coupling or anisotropy variation in hard phase is still an ambiguity and requires an in-depth analysis. In order to investigate this, an analysis of the recoil curves for L1_0–A1 FePt nanocomposite thin films of varying thickness have been performed. The switching field distribution reveals that the maximum of openness of recoil curve is directly proportional to the amount of uncoupled soft phase present in the system. The coupling between the hard and soft phase is also found to increase with the thickness of the film. Monte Carlo simulations on a model three dimensional array of interacting nanomagnetic grains provide further insight into the effect of inter granular exchange interactions between the soft and hard phases. - Highlights: • L1_0-A1 FePt nanocomposites thin films of different thickness have been fabricated by DC sputtering. • Hysteresis curve measurements exhibit perfect single phase (L1_0) like behavior for thicker films. • SFD reveals that the openness of recoil curves is directly linked with the amount of uncoupled soft (A1) phase. • Monte Carlo simulation predicts that the extent of exchange interaction increases with thickness of the film.

  9. Origin of open recoil curves in L1{sub 0}-A1 FePt exchange coupled nanocomposite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Rajan [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Kapoor, Akanksha [M. Tech Nanoscience and Nanotechnology, University of Delhi, Delhi 110007 (India); Lamba, S. [School of Sciences, Indira Gandhi National Open University, New Delhi 110068 (India); Annapoorni, S., E-mail: annapoornis@yahoo.co.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-11-15

    Mixed phase FePt systems with intergranular coupling may be looked upon as natural exchange spring systems. The coupling strength between the soft and hard phase in these systems can be analyzed using recoil curves. However, the origin of open recoil curves depicting the breakdown of exchange coupling or anisotropy variation in hard phase is still an ambiguity and requires an in-depth analysis. In order to investigate this, an analysis of the recoil curves for L1{sub 0}–A1 FePt nanocomposite thin films of varying thickness have been performed. The switching field distribution reveals that the maximum of openness of recoil curve is directly proportional to the amount of uncoupled soft phase present in the system. The coupling between the hard and soft phase is also found to increase with the thickness of the film. Monte Carlo simulations on a model three dimensional array of interacting nanomagnetic grains provide further insight into the effect of inter granular exchange interactions between the soft and hard phases. - Highlights: • L1{sub 0}-A1 FePt nanocomposites thin films of different thickness have been fabricated by DC sputtering. • Hysteresis curve measurements exhibit perfect single phase (L1{sub 0}) like behavior for thicker films. • SFD reveals that the openness of recoil curves is directly linked with the amount of uncoupled soft (A1) phase. • Monte Carlo simulation predicts that the extent of exchange interaction increases with thickness of the film.

  10. Evidence for nanoscale two-dimensional Co clusters in CoPt{sub 3} films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Cross, J O [Department of Physics, University of Washington, Seattle, WA 98195 (United States); Newville, M [Consortium for Advanced Radiation Sources, University of Chicago, Chicago, IL 60637 (United States); Maranville, B B; Hellman, F [Department of Physics, University of California at San Diego, La Jolla, CA 92093 (United States); Bordel, C [Department of Physics, University of California at Berkeley, CA 94720 (United States); Harris, V G, E-mail: cbordel@berkeley.ed [Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115 (United States)

    2010-04-14

    The length scale of the local chemical anisotropy responsible for the growth-temperature-induced perpendicular magnetic anisotropy of face-centered cubic CoPt{sub 3} alloy films was investigated using polarized extended x-ray absorption fine structure (EXAFS). These x-ray measurements were performed on a series of four (111) CoPt{sub 3} films epitaxially grown on (0001) sapphire substrates. The EXAFS data show a preference for Co-Co pairs parallel to the film plane when the film exhibits magnetic anisotropy, and random chemical order otherwise. Furthermore, atomic pair correlation anisotropy was evidenced only in the EXAFS signal from the next neighbors to the absorbing Co atoms and from multiple scattering paths focused through the next neighbors. This suggests that the Co clusters are no more than a few atoms in extent in the plane and one monolayer in extent out of the plane. Our EXAFS results confirm the correlation between perpendicular magnetic anisotropy and two-dimensional Co segregation in CoPt{sub 3} alloy films, and establish a length scale on the order of 10 A for the Co clusters.

  11. Liquid phase deposition of silica: Thin films, colloids and fullerenes

    Science.gov (United States)

    Whitsitt, Elizabeth A.

    Little research has been done to explore liquid phase deposition (LPD) of silica on non-planar substrates. This thesis proves that the seeded growth of silica colloids from fullerene and surfactant micelles is possible via LPD, as is the coating of individual single walled carbon nanotubes (SWNTs) and carbon fibers. Working on the premise that a molecular growth mechanism (versus colloidal/gel deposition) is valid for LPD, nanostructured substrates and specific chemical functional groups should act as "seeds," or templates, for silica growth. Seeded growth is confirmed by reactions of the growth solution with a range of surfactants and with materials with distinctive surface moieties. LPD promises lower production costs and environmental impact as compared to present methods of coating technology, because it is an inherently simple process, using low temperatures and inexpensive air-stable reactants. Silica is ubiquitous in materials science. Its applications range from thixotropic additives for paint to gate dielectrics in the semiconductor industry. Nano-structured coatings and thin films are integral in today's electronics industry and will become more vital as the size of electronics shrinks. With the incorporation of nanoparticles in future devices, the ability to deposit quality coatings with finely tuned properties becomes paramount. The methods developed herein have applications in fabricating insulators for use in the future molecular scale electronics industry. Additionally, these silica nanoparticles have applications as templates for use in photonics and fuel cell membrane production and lend strength and durability to composites.

  12. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  13. Stress anisotropy and stress gradient in magnetron sputtered films with different deposition geometries

    International Nuclear Information System (INIS)

    Zhao, Z.B.; Yalisove, S.M.; Bilello, J.C.

    2006-01-01

    Mo films were deposited via magnetron sputtering with two different deposition geometries: dynamic deposition (moving substrate) and static deposition (fixed substrate). The residual stress and structural morphologies of these films were investigated, with particular focus on in-plane anisotropy of the biaxial stress and stress gradient across the film thickness. The results revealed that the Mo films developed distinct states of residual stress, which depended on both deposition geometry and film thickness. With the dynamic geometry, the Mo films generally exhibited anisotropic stress. Both the degree of anisotropy and the magnitude of stress varied as functions of film thickness. The variation of stress was linked to the evolution of anisotropic microstructures in the films. The Mo films from the static geometry developed isotropic residual stress, which was more compressive and noticeably larger in magnitude than that of the Mo films from the dynamic geometry. Aside from these disparities, the two types of Mo films (i.e., anisotropic and isotropic) exhibited notably similar trends of stress variation with film thickness. Depth profiling indicated the presence of large stress gradients for the Mo films, irrespective of the deposition geometries. This observation seems to be consistent with the premise that Mo films develop a zone T structure, which is inherently inhomogeneous along the film thickness. Moreover, the largest stress gradient for both types of deposition geometries arises at roughly the same film depth (∼240 nm from substrate), where the stresses sharply transits from highly compressive to less compressive or even tensile. This appears to correspond to the boundary region that separates two distinct stages of microstructural evolution, a feature unique to zone T-type structure

  14. Magnetic properties and configuration of Fe{sub 50}Pt{sub 50*x}Rh{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, Jochen; Lott, Dieter; Schreyer, Andreas [Helmholt-Zentrum, Geesthacht (Germany); Schmidt, Wolfgang; Schmalzl, Karin [IFF Forschungszentrum, Juelich (Germany); JCNS at ILL (France); Mankey, Gary J. [MINT Center, University of Alabama (United States); Klose, Frank [Ansto, Bragg Institute (Australia); Tartakowskaya, Helena [Institute for Magnetism, National Accademy of Scinece (Ukraine)

    2011-07-01

    Ordered FePt alloys with L1{sub 0} structure are known as materials with FM order and a high magnetic moment of Fe providing a large magnetization. The large atomic number of Pt on the other hand results in a high magnetic anisotropy. If grown in thin films, the high anisotropy often results in perpendicular magnetization which is the preferred orientation for current magnetic recording media. One way to control the magnetic properties in these materials is through the introduction of a third element into the crystal matrix e.g. Rh. When Rh is added to replace Pt in the equiatomic alloy, new magnetic phases emerge. Here we present neutron diffraction studies on the magnetic properties of different 200nm thick Fe{sub 50}Pt{sub 50*x}Rh{sub x} films in dependence of the temperature and external magnetic fields. Additional resonant x-ray measurements on the Fe and Pt absorption edges provide additional information about the magnetic moments on these sites.

  15. Investigation of the magnetic properties in thin Fe50Pt50-xRhx films by neutron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, J.; Lott, D.; Schreyer, A. [GKSS Research Centre (Germany); Mankey, G.J. [University of Alabama, MINT Center (United States); Schmidt, W.; Schmalzl, K. [Juelich Research Centre (Germany); Tartakowskaya, E. [Institute for Magnetism, National Accademy of Science (United States)

    2009-07-01

    FePt-based alloys are typically the material of choice for magnetic information storage media. The high magnetic moment of Fe gives a large magnetization and the large atomic number of Pt results in a high magnetic anisotropy. This combination enables the written bits to be smaller than ever before, since magnetic grains with a high magnetic anisotropy are more thermally stable. One way to control the magnetic properties in these materials is through the introduction of a third element into the crystal matrix, e.g. Rh. When Rh is added to replace Pt in the equiatomic alloy, new magnetic phases emerge. Bulk samples of Fe{sub 50}Pt{sub 40}Rh{sub 10} for example, studied by magnetization measurements refer to an antiferromagnetic (AF)/ferromagnetic (FM) phase transition at about 150 K when heated. Additional magnetostriction measurements indicate that the phase transition could also be induced by applying a magnetic field. Here we present results on several Fe{sub 50}Pt{sub 50-x}Rh{sub x} films. These films were examined by neutron diffraction in dependence of temperature and magnetic field. The observed magnetic behaviours differ significant from the behaviour of the bulk system.

  16. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  17. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor depositionDeposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  18. Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Lee, W.W.; Reeves, R.R.

    1992-01-01

    A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

  19. Characterization of thin CeO{sub 2} films electrochemically deposited on HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Faisal, Firas [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Toghan, Arafat, E-mail: arafat.toghan@yahoo.com [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Chemistry Department, Faculty of Science, South Valley University, 83523 Qena (Egypt); Khalakhan, Ivan; Vorokhta, Mykhailo; Matolin, Vladimír [Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 747/2, 180 00 Prague 8 (Czech Republic); Libuda, Jörg [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Erlangen Catalysis Resource Center, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany)

    2015-09-30

    Graphical abstract: - Highlights: • Preparation of proton exchange membrane fuel cells catalyst using electrochemical thin film deposition. • Electrodeposition thin films of CeO{sub 2} on HOPG substrates. • The samples were characterized by in-situ AFM and ex-situ XPS. • XPS results reveal that the electrochemically deposited cerium oxide films are stoichiometric. • Exposing the films to ambient air, cracking structures are formed. - Abstract: Electrodeposition is widely used for industrial applications to deposit thin films, coatings, and adhesion layers. Herein, CeO{sub 2} thin films were deposited on a highly oriented pyrolytic graphite (HOPG) substrate by cathodic electrodeposition. The influence of the deposition parameters on the yield and on the film morphology is studied and discussed. Morphology and composition of the electrodeposited films were characterized by in-situ atomic force microscopy (AFM), scanning electron microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). By AFM we show that the thickness of CeO{sub 2} films can be controlled via the Ce{sup 3+} concentration in solution and the deposition time. After exposing the films to ambient air, cracking structures are formed, which were analyzed by AFM in detail. The chemical composition of the deposits was analyzed by XPS indicating the formation of nearly stoichiometric CeO{sub 2}.

  20. Comparison of a model vapor deposited glass films to equilibrium glass films

    Science.gov (United States)

    Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

    Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.