Proton and Neutron Irradiation Tests of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter

CERN Document Server

INSPIRE-00106910

2012-01-01

The readout electronics of the ATLAS Hadronic Endcap Calorimeter will have to withstand the about ten times larger radiation environment of the future high-luminosity LHC (HL-LHC) compared to their design values. The GaAs ASIC which comprises the heart of the readout electronics has been exposed to neutron and proton radiation with fluences up to ten times the total expected fluences for ten years of running of the HL-LHC. Neutron tests were performed at the NPI in Rez, Czech Republic, where a 36 MeV proton beam is directed on a thick heavy water target to produce neutrons. The proton irradiation was done with 200 MeV protons at the PROSCAN area of the Proton Irradiation Facility at the PSI in Villigen, Switzerland. In-situ measurements of S-parameters in both tests allow the evaluation of frequency dependent performance parameters - like gain and input impedance - as a function of the fluence. The linearity of the ASIC response has been measured directly in the neutron tests with a triangular input pulse of ...

Study of irradiation defects in GaAs

International Nuclear Information System (INIS)

Loualiche, S.

1982-11-01

Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

High-aspect ratio microstructures in p-type GaAs and InP created by proton beam writing

International Nuclear Information System (INIS)

Menzel, F.; Spemann, D.; Butz, T.

2011-01-01

With proton beam writing (PBW) and subsequent electrochemical etching in HF-solution the creation of high-aspect ratio microstructures in p-type InP was performed for the first time. Microstructures with high surface quality as well as high-aspect ratio possessing lateral dimensions down to 1 μm were produced. Furthermore, free-standing microstructures were created in this material by a combined irradiation with 2.25 MeV protons and 1.125 MeV H 2 + molecules, were the smallest structure dimension of 0.6 μm was achieved for a horizontal needle. The creation of nearly perfect circular microstructures indicates that the crystal structure has little effect on the structuring process by PBW in this material. Moreover, the effect of reduced etching inside of closed irradiation patterns, already known from Si and GaAs, was observed also in InP. In further PBW experiments and subsequent electrochemical etching with KOH-solution p-type GaAs microstructures were produced. By using a 4-fold higher etch current density of 45 mA/cm 2 compared to former PBW experiments on this material the quality of the microstructures could be improved significantly leading to high aspect-ratio structures with minimum lateral sizes of ∼1 μm, nearly vertical side walls as well as circular microstructures. This shows the reduced influence of the crystal structure on the shape of the microstructures compared to experiments with lower etch current density where only flat microstructures with inclined side walls determined by the crystal structure could be created.

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Electronic properties of semiinsulating GaAs irradiated by protons

CERN Document Server

Brudnyj, V N

2001-01-01

The n-to-p-type transformation of the conductivity and the decrease of resistivity (rho) down to 10 sup 2 Ohm cm (300 K) have been observed in a semi insulating GaAs (rho approx = (3-4) 10 sup 8 Ohm cm) upon proto n (5 MeV) bombardment with the dose up to D = 2 x 10 sup 1 sup 7 cm sup - sup 2. The temperature dependence of rho in heavy irradiated samples indicates that the conductivity is determined by the electron hopping within the temperature range (400-120) K and by the changeable hopping length at T <= 120 K. In proton irradiated low resistivity samples, the electronic switching effects have been revealed near 20 K. Isochronal annealing of the radiation-induced defects is investigated in the temperature range (20-750) deg C

Intermetallic bonds and midgap interface states at epitaxial Al/GaAs(001) junctions

International Nuclear Information System (INIS)

Maxisch, T.; Baldereschi, A.; Binggeli, N.

2003-03-01

Using first-principles pseudopotential calculations, we have investigated the nature of the electronic states with energies within the semiconductor bandgap of abrupt, defect-free As-terminated Al/GaAs(001) junctions. While bonding-/antibonding-like semiconductor evanescent states occur near the valence-/conduction-band edges, the semiconductor midgap region is characterized by a new type of electronic states, not accounted for by commonly accepted models. These states, which correspond to intermetallic bonds between the outermost Ga cations of the semiconductor and Al atoms of the metal, occur near the Fermi energy. They are localized at the interface and are located around the J-point of the Brillouin zone. These new interface states derive from an interaction between localized states of the Al(001) surface and bulk GaAs conduction band states, mediated by localized states of the unreconstructed As-terminated GaAs(001) surface. (author)

Noise behaviour of semiinsulating GaAs particle detectors at various temperatures before and after irradiation

International Nuclear Information System (INIS)

Tenbusch, F.; Braunschweig, W.; Chu, Z.; Krais, R.; Kubicki, T.; Luebelsmeyer, K.; Pandoulas, D.; Rente, C.; Syben, O.; Toporowski, M.; Wittmer, B.; Xiao, W.J.

1998-01-01

We investigated the noise behaviour of surface barrier detectors (double sided Schottky contact) made of semiinsulating GaAs. Two types of measurements were performed: equivalent noise charge (ENC) and noise power density spectra in a frequency range from 10 Hz to 500 kHz. The shape of the density spectra are a powerful tool to examine the physical origin of the noise, before irradiation it is dominated by generation-recombination processes caused by deep levels. Temperature dependent noise measurements reveal the deep level parameters like activation energy and cross section, which are also extracted by analyzing the time transients of the charge pulse from α-particles. After irradiation with protons, neutrons and pions the influence of the deep levels being originally responsible for the noise is found to decrease and a reduction of the noise over the entire frequency range with increasing fluence is observed. (orig.)

Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Oeztuerk, N.; Bahceli, S.

2010-01-01

InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

The influence of γ-irradiation cobalt 60 on electrical properties of undoped GaAs treated with hydrogen plasma

International Nuclear Information System (INIS)

Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Bumaj, Yu.A.; Ul'yashin, A.G.

1999-01-01

The influence of exposition to a hydrogen plasma (hydrogenation) on the electrical properties alteration under gamma-irradiation in bulk GaAs have been investigated. It is shown that crystals hydrogenation before irradiation leads to particularly passivation of electrically active defects that are responsible for carriers scattering and removing processes in irradiated crystals. Radiation defects thermostability in hydrogenated GaAs crystals is lower than that in non hydrogenated ones. The energetic levels position of main defect that effects on electrical properties alteration after irradiation in GaAs crystals was detected. It is equal to E D =E C -0,125±0,0005 eV

Proton irradiation effects on organic polymers

International Nuclear Information System (INIS)

Seguchi, T.; Sasuga, T.; Kawakami, W.; Hagiwara, M.; Kohno, I.; Kamitsubo, H.

1987-01-01

Organic polymer films(100 μm thickness) of polyethylene, polypropylene, polyethyleneterephtalate, and polyethersulfone were irradiated by protons of 8 MeV using a cyclotron, and their radiation effects were investigated by the changes of mechanical properties. In order to irradiate protons uniformly over wide area of polymer films, specimens were scanned during proton irradiation using a special apparatus. The absorbed dose was measured by CTA and RCD film dosimeters, and can be determined that 1 μC/cm 2 of 8 MeV proton fluence is equivalent to 54 kGy. For polyethylene and polypropylene, there was no significant difference between proton and electron irradiation for same doses. However, for polyethersulfone the decay of mechanical property was observed to be less than that of irradiation by electron. (author)

The effects of electron and proton radiation on GaSb infrared solar cells

Science.gov (United States)

Gruenbaum, P. E.; Avery, J. E.; Fraas, L. M.

1991-01-01

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

X-ray study of strain relaxation in heteroepitaxial AlGaAs layers annealed under high hydrostatic pressure

International Nuclear Information System (INIS)

Bak-Misiuk, J.; Adamczewska, J.; Kozanecki, A.; Kuritsyn, D.; Glukhanyuk, W.; Trela, J.; Misiuk, A.; Reginski, K.; Wierzchowski, W.; Wieteska, K.

2002-01-01

The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5 μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase of intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction, perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [1 - 10] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K. (author)

Local mechanical stress relaxation of Gunn diodes irradiated by protons

International Nuclear Information System (INIS)

Gradoboev, A V; Tesleva, E P

2017-01-01

The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)·10 2 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. (paper)

The PIREX proton irradiation facility

Energy Technology Data Exchange (ETDEWEB)

Victoria, M. [Association EURATOM, Villigen (Switzerland)

1995-10-01

The proton Irradiation Experiment (PIREX) is a materials irradiation facility installed in a beam line of the 590 MeV proton accelerator at the Paul Scherrer Institute. Its main purpose is the testing of candidate materials for fusion reactor components. Protons of this energy produce simultaneously displacement damage and spallation products, amongst them helium and can therefore simulate any possible synergistic effects of damage and helium, that would be produced by the fusion neutrons.

The PIREX proton irradiation facility

International Nuclear Information System (INIS)

Victoria, M.

1995-01-01

The proton Irradiation Experiment (PIREX) is a materials irradiation facility installed in a beam line of the 590 MeV proton accelerator at the Paul Scherrer Institute. Its main purpose is the testing of candidate materials for fusion reactor components. Protons of this energy produce simultaneously displacement damage and spallation products, amongst them helium and can therefore simulate any possible synergistic effects of damage and helium, that would be produced by the fusion neutrons

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

International Nuclear Information System (INIS)

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

2013-01-01

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

Acute skin reactions observed in fractionated proton irradiation

International Nuclear Information System (INIS)

Arimoto, Takuro; Maruhashi, Noboru; Takada, Yoshihisa; Hayakawa, Yoshinori; Inada, Tetsuo; Kitagawa, Toshio

1989-01-01

Between May 1985 and July 1987, 49 skin reactions of 43 patients treated by proton irradiation were observed at the Particle Radiation Medical Science Center (PARMS), the University of Tsukuba. Taking the peak skin score as an endpoint, the radiobiological effects [relative biological effectiveness (RBE) and time-dose relationship] of the proton beam in multi-fractionated treatments were estimated. Factors influencing the skin dose, such as the prescribed tumor dose, tumor site, and number of applied fields, were also analyzed. The following conclusions regarding acute skin reactions to the clinical use of proton irradiation were obtained: 1) the physical skin-sparing effect of proton irradiation in single-field irradiation, especially in superficial regions, is not large compared with that of high-energy photon irradiation; 2) multidirectional proton irradiation significantly reduced the skin dose and severity of acute reasons; 3) the radiobiological effects of the proton beam, RBE and the time factor, estimated in human skin in multi-fractional treatment were slightly smaller than those of X-rays, i.e., 0.92 and -0.25±0.09, respectively. (author)

Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

International Nuclear Information System (INIS)

Ridgway, M.C.; Everett, S.E.; Glover, C.J.; Kluth, S.M.; Kluth, P.; Johannessen, B.; Hussain, Z.S.; Llewellyn, D.J.; Foran, G.J.; Azevedo, G. de M.

2006-01-01

We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N 2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the Ga K-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N 2 bubble formation was not accommodated by Ga-Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number

Silicon/HfO2 interface: Effects of proton irradiation

International Nuclear Information System (INIS)

Maurya, Savita; Radhakrishna, M.

2015-01-01

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO 2 interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation

A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

Science.gov (United States)

Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

1984-01-01

Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

Effect of semiconductor GaAs laser irradiation on pain perception in mice

Energy Technology Data Exchange (ETDEWEB)

Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

1989-01-01

The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

Temperature and 8 MeV electron irradiation effects on GaAs solar cells

Indian Academy of Sciences (India)

GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper ...

Emulation of neutron irradiation effects with protons: validation of principle

International Nuclear Information System (INIS)

Was, G.S.; Busby, J.T.; Allen, T.; Kenik, E.A.; Jensson, A.; Bruemmer, S.M.; Gan, J.; Edwards, A.D.; Scott, P.M.; Andreson, P.L.

2002-01-01

This paper presents the results of the irradiation, characterization and irradiation assisted stress corrosion cracking (IASCC) behavior of proton- and neutron-irradiated samples of 304SS and 316SS from the same heats. The objective of the study was to determine whether proton irradiation does indeed emulate the full range of effects of in-reactor neutron irradiation: radiation-induced segregation (RIS), irradiated microstructure, radiation hardening and IASCC susceptibility. The work focused on commercial heats of 304 stainless steel (heat B) and 316 stainless steel (heat P). Irradiation with protons was conducted at 360 deg. C to doses between 0.3 and 5.0 dpa to approximate those by neutron irradiation at 275 deg. C over the same dose range. Characterization consisted of grain boundary microchemistry, dislocation loop microstructure, hardness as well as stress corrosion cracking (SCC) susceptibility of both un-irradiated and irradiated samples in oxygenated and de-oxygenated water environments at 288 deg. C. Overall, microchemistry, microstructure, hardening and SCC behavior of proton- and neutron-irradiated samples were in excellent agreement. RIS analysis showed that in both heats and for both irradiating particles, the pre-existing grain boundary Cr enrichment transformed into a 'W' shaped profile at 1.0 dpa and then into a 'V' shaped profile between 3.0 and 5.0 dpa. Grain boundary segregation of Cr, Ni, Si, and Mo all followed the same trends and agreed well in magnitude. The microstructure of both proton- and neutron-irradiated samples was dominated by small, faulted dislocation loops. Loop size distributions were nearly identical in both heats over a range of doses. Saturated loop size following neutron irradiation was about 30% larger than that following proton irradiation. Loop density increased with dose through 5.0 dpa for both particle irradiations and was a factor of 3 greater in neutron-irradiated samples vs. proton-irradiated samples. Grain boundary

GINES: first rice mutant obtained from proton irradiation

International Nuclear Information System (INIS)

Gonzalez, Maria C; Perez, Noraida; Cristo, Elizabeth

2009-01-01

A new rice variety of a good productive potential and salinity tolerance was obtained at the National Institute of Agricultural Sciences (INCA), starting from in vitro culture of J-104 rice seeds irradiated with protons. This is the first report of a variety achieved by proton irradiation

Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

1990-08-10

Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Electron transport in nanometer GaAs structure under radiation exposure

CERN Document Server

Demarina, N V

2002-01-01

One investigates into effect of neutron and proton irradiation on electron transport in nanometer GaAs structures. Mathematical model takes account of radiation defects via introduction of additional mechanisms od scattering of carriers at point defects and disordered regions. To investigate experimentally into volt-ampere and volt-farad characteristics one used a structure based on a field-effect transistor with the Schottky gate and a built-in channel. Calculation results of electron mobility, drift rate of electrons, time of energy relaxation and electron pulse are compared with the experimental data

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Science.gov (United States)

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Proton irradiation effects on beryllium – A macroscopic assessment

Energy Technology Data Exchange (ETDEWEB)

Simos, Nikolaos, E-mail: simos@bnl.gov [Nuclear Sciences & Technology Department, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed [Nuclear Sciences & Technology Department, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Zhong, Zhong [Photon Sciences, NSLS II, Brookhaven National Laboratory, Upton, NY, 11973 (United States); Camino, Fernando [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973 (United States)

2016-10-15

Beryllium, due to its excellent neutron multiplication and moderation properties, in conjunction with its good thermal properties, is under consideration for use as plasma facing material in fusion reactors and as a very effective neutron reflector in fission reactors. While it is characterized by unique combination of structural, chemical, atomic number, and neutron absorption cross section it suffers, however, from irradiation generated transmutation gases such as helium and tritium which exhibit low solubility leading to supersaturation of the Be matrix and tend to precipitate into bubbles that coalesce and induce swelling and embrittlement thus degrading the metal and limiting its lifetime. Utilization of beryllium as a pion production low-Z target in high power proton accelerators has been sought both for its low Z and good thermal properties in an effort to mitigate thermos-mechanical shock that is expected to be induced under the multi-MW power demand. To assess irradiation-induced changes in the thermal and mechanical properties of Beryllium, a study focusing on proton irradiation damage effects has been undertaken using 200 MeV protons from the Brookhaven National Laboratory Linac and followed by a multi-faceted post-irradiation analysis that included the thermal and volumetric stability of irradiated beryllium, the stress-strain behavior and its ductility loss as a function of proton fluence and the effects of proton irradiation on the microstructure using synchrotron X-ray diffraction. The mimicking of high temperature irradiation of Beryllium via high temperature annealing schemes has been conducted as part of the post-irradiation study. This paper focuses on the thermal stability and mechanical property changes of the proton irradiated beryllium and presents results of the macroscopic property changes of Beryllium deduced from thermal and mechanical tests.

Proton irradiation effects on gallium nitride-based devices

Science.gov (United States)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Technique for sparing previously irradiated critical normal structures in salvage proton craniospinal irradiation

International Nuclear Information System (INIS)

McDonald, Mark W; Wolanski, Mark R; Simmons, Joseph W; Buchsbaum, Jeffrey C

2013-01-01

Cranial reirradiation is clinically appropriate in some cases but cumulative radiation dose to critical normal structures remains a practical concern. The authors developed a simple technique in 3D conformal proton craniospinal irradiation (CSI) to block organs at risk (OAR) while minimizing underdosing of adjacent target brain tissue. Two clinical cases illustrate the use of proton therapy to provide salvage CSI when a previously irradiated OAR required sparing from additional radiation dose. The prior radiation plan was coregistered to the treatment planning CT to create a planning organ at risk volume (PRV) around the OAR. Right and left lateral cranial whole brain proton apertures were created with a small block over the PRV. Then right and left lateral “inverse apertures” were generated, creating an aperture opening in the shape of the area previously blocked and blocking the area previously open. The inverse aperture opening was made one millimeter smaller than the original block to minimize the risk of dose overlap. The inverse apertures were used to irradiate the target volume lateral to the PRV, selecting a proton beam range to abut the 50% isodose line against either lateral edge of the PRV. Together, the 4 cranial proton fields created a region of complete dose avoidance around the OAR. Comparative photon treatment plans were generated with opposed lateral X-ray fields with custom blocks and coplanar intensity modulated radiation therapy optimized to avoid the PRV. Cumulative dose volume histograms were evaluated. Treatment plans were developed and successfully implemented to provide sparing of previously irradiated critical normal structures while treating target brain lateral to these structures. The absence of dose overlapping during irradiation through the inverse apertures was confirmed by film. Compared to the lateral X-ray and IMRT treatment plans, the proton CSI technique improved coverage of target brain tissue while providing the least

Ferromagnetism in proton irradiated 4H-SiC single crystal

Directory of Open Access Journals (Sweden)

Ren-Wei Zhou

2015-04-01

Full Text Available Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Positron lifetime study of copper irradiated by energetic protons or energetic neutrons

International Nuclear Information System (INIS)

Howell, R.H.

1979-03-01

Positron lifetime measurements of pure copper damaged by irradiation with energetic protons and neutrons are presented. Lifetime determinations of the bulk material and various traps were made, and the dependence of the trapping rate on dose and irradiation energy were investigated. The results from the neutron- and proton-irradiated samples point to the existence of traps with similar but distinct lifetime parameters, not varying greatly from values reported in deformation studies. Also, a trap with long lifetime is seen for some proton irradiations, but is never seen for the neutron irradiations. The trapping rate of the short-lifetime trap is a linear function of dose for proton-irradiated samples and nearly so for the neutron irradiation. 1 figure

Burst annealing of high temperature GaAs solar cells

Science.gov (United States)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Burst annealing of high temperature GaAs solar cells

International Nuclear Information System (INIS)

Brothers, P.R.; Horne, W.E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

Modification of polycrystalline copper by proton irradiation

International Nuclear Information System (INIS)

Garcia S, F.; Cabral P, A.; Saniger B, J.M.; Banuelos, J.G.; Barragan V, A.

1997-01-01

Polished copper samples were irradiated with proton beams of 300 and 700 keV at room temperature and at -150 Centigrade. In this work the obtained results are reported when such copper irradiated samples are analysed with Sem, Tem, AFM. The Sem micrographs showed evident changes in surface of these copper samples, therefore an EDAX microanalysis was done for its characterization. additionally, the Tem micrographs showed heaps formation until 200 nm. Its electron diffraction spectra indicated that these heaps consist of a copper compound. Finally with AFM were observed changes in coloration of the irradiated sample surface, as well as changes in texture and rugosity of them. These results show in general that irradiation process with protons which is known as an innocuo process produces changes in the copper properties. (Author)

Precipitation in Zr-2.5Nb enhanced by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Cann, C. D.; So, C. B.; Styles, R. C.; Coleman, C. E.

1993-08-15

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich {beta}-phase precipitates within the {alpha}-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the {alpha}-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich {beta}-phase. This result is in agreement with the {beta}phase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb.

Precipitation in Zr-2.5Nb enhanced by proton irradiation

International Nuclear Information System (INIS)

Cann, C.D.; So, C.B.; Styles, R.C.; Coleman, C.E.

1993-08-01

A 3.6 MeV proton irradiation of annealed Zr-2.5Nb has been performed to determine whether proton irradiation will enhance the precipitation of Nb-rich β-phase precipitates within the α-grains. a transmission electron microscope examination of a foil after irradiation at 770 K for 18 h and at 720 K for 264.5 h to a total damage of 0.94 dpa revealed a fine dispersion of precipitates within the α-grains. Electron diffraction analysis of the precipitates found they have lattice plane spacings consistent with the Nb-rich β-phase. This result is in agreement with the βphase precipitation observed following neutron irradiation, and thus it supports the use of proton irradiation to simulate neutron-irradiation effects in Zr-2.5Nb

Dielectric properties of proton irradiated PES

International Nuclear Information System (INIS)

Shah, Nilam; Singh, N.L.; Singh, K.P.

2005-01-01

Polyethersulfone films were irradiated with 3 MeV proton beam at fluences ranging from 10 13 to 10 15 ions/cm 2 . AC electrical properties of irradiated samples were studied in the frequency range 100 Hz to 1MHz by LCR meter. There is an exponential increase in conductivity with frequency but the effect of irradiation is not significant. The dielectric loss/constant are observed to change with fluence. (author)

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Directory of Open Access Journals (Sweden)

Heyn Ch

2009-01-01

Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Oertel, Stefan

2012-07-01

specially designed (110)-GaAs heterostructure consisting of a 9 nm thick quantum well separated by 3 nm thin AlGaAs barriers from two adjacent 4 nm quantum wells is characterized: The electron spin polarization in the 9 nm drain quantum well is measured in dependence on the energy of the circular optical injection. At the indirect optical injection via the heavy hole resonance of the thin quantum wells an electron spin polarization of 75% in the drain quantum well is reached. By means of the structure the impact of interface roughnesses in the 9 nm quantum well on the carrier dynamics is additionally investigated. The (110)-GaAs heterostructure is used to determine the spin relaxation time in (110)-GaAs quantum wells experimentally over a wide range of densities and temperatures. The special growth direction of the structure provides access to spin relaxation mechanisms that are usually concealed by the dominating Dyakonov-Perel mechanism. The measured elect ron spin relaxation times are interpreted as an exciton marker within the electron-hole plasma and are in good agreement with a simple model based upon the exciton fraction within the electron-hole plasma.

Luminescence imaging of water during proton-beam irradiation for range estimation

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Seiichi, E-mail: s-yama@met.nagoya-u.ac.jp; Okumura, Satoshi; Komori, Masataka [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Nagoya 461-8673 (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center, Nagoya 462-8508 (Japan)

2015-11-15

Purpose: Proton therapy has the ability to selectively deliver a dose to the target tumor, so the dose distribution should be accurately measured by a precise and efficient method. The authors found that luminescence was emitted from water during proton irradiation and conjectured that this phenomenon could be used for estimating the dose distribution. Methods: To achieve more accurate dose distribution, the authors set water phantoms on a table with a spot scanning proton therapy system and measured the luminescence images of these phantoms with a high-sensitivity, cooled charge coupled device camera during proton-beam irradiation. The authors imaged the phantoms of pure water, fluorescein solution, and an acrylic block. Results: The luminescence images of water phantoms taken during proton-beam irradiation showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. Furthermore, the image of the pure-water phantom showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of the fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had a 14.5% shorter proton range than that of water; the proton range in the acrylic phantom generally matched the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 s. Conclusions: Luminescence imaging during proton-beam irradiation is promising as an effective method for range estimation in proton therapy.

Luminescence imaging of water during proton-beam irradiation for range estimation

International Nuclear Information System (INIS)

Yamamoto, Seiichi; Okumura, Satoshi; Komori, Masataka; Toshito, Toshiyuki

2015-01-01

Purpose: Proton therapy has the ability to selectively deliver a dose to the target tumor, so the dose distribution should be accurately measured by a precise and efficient method. The authors found that luminescence was emitted from water during proton irradiation and conjectured that this phenomenon could be used for estimating the dose distribution. Methods: To achieve more accurate dose distribution, the authors set water phantoms on a table with a spot scanning proton therapy system and measured the luminescence images of these phantoms with a high-sensitivity, cooled charge coupled device camera during proton-beam irradiation. The authors imaged the phantoms of pure water, fluorescein solution, and an acrylic block. Results: The luminescence images of water phantoms taken during proton-beam irradiation showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. Furthermore, the image of the pure-water phantom showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of the fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had a 14.5% shorter proton range than that of water; the proton range in the acrylic phantom generally matched the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 s. Conclusions: Luminescence imaging during proton-beam irradiation is promising as an effective method for range estimation in proton therapy

Activation of 45-MeV proton irradiation and proton-induced neutron irradiation in polymers

International Nuclear Information System (INIS)

Ra, Se-Jin; Kim, Kye-Ryung; Jung, Myung-Hwan; Yang, Tae-Keon

2010-01-01

During beam irradiation experiments with more than a few MeV energetic protons, the sample activation problem can be very severe because it causes many kinds of additional problems for the post-processing of the samples, such as time loss, inconvenience of sample handling, personal radiation safety, etc. The most serious problem is that immediate treatment of the sample is impossible in some experiments, such as nano-particle synthesizing. To solve these problems, we studied why the samples are activated and how the level of the activation can be reduced. It is known that the main reasons of activation are nuclear reactions with elements of the target material by primary protons and secondary produced neutrons. Even though the irradiation conditions are same, the level of the activation can be different depending on the target materials. For the nanoparticle synthesizing experiments, the target materials can be defined as the container and the sample itself. The reduction of the activation from the container is easier than the reduction from the sample. Therefore, we tried to reduce the activation level by changing the container materials. In this paper, the results are displayed for some candidate container materials, such as polymethyl methacrylate, polystyrene, Glass, etc., with 45-MeV and 10-nA proton beams. As a result, PS is the most suitable material for the container because of its relatively low level of the activation by protons. Also the contribution of secondary produced neutrons to the activation is negligible.

Proton irradiation of liquid crystal based adaptive optical devices

International Nuclear Information System (INIS)

Buis, E.J.; Berkhout, G.C.G.; Love, G.D.; Kirby, A.K.; Taylor, J.M.; Hannemann, S.; Collon, M.J.

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10 10 p/cm 2 ). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

Proton irradiation of liquid crystal based adaptive optical devices

Energy Technology Data Exchange (ETDEWEB)

Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

2012-01-01

To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

GaAs Led based NIEL spectrometer for the space radiation environment

International Nuclear Information System (INIS)

Houdayer, A.J.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.

1999-01-01

A NIEL (non-ionizing-energy-loss) spectrometer for the Mir space station is described. The NIEL spectrometer package contained 20 GaAs LEDs, 10 SiC LEDs and 13 locations for TLD-700s. In order to probe different energy regions of the radiation field, the package is divided into 4 compartments covered by absorbers of varying thicknesses. This device has been submitted to proton irradiation. The effects on both the response time and the intensity of the light were measured as a function of the fluence. One of the advantages of LEDs as radiation monitors is their sensitivity and it is shown that it would be possible to detect a fluence of 4*10 7 p/cm 2 of 10 MeV protons, with sensitivity scaled as 1/E for other energies. (A.C.)

High Pressure Spectroscopic Studies of AlGaAs, GaAs, and II-VI Semiconductors and Heterostructures

National Research Council Canada - National Science Library

Chandrasekhar, Meera

1997-01-01

We have conducted four studies on three different but related materials. The first is a temperature study of a pseudomorphic epilayer of ZnSe on GaAs, where we measured the temperature dependence of the interlayer biaxial strain...

Surface, structural and tensile properties of proton beam irradiated zirconium

Energy Technology Data Exchange (ETDEWEB)

Rafique, Mohsin; Chae, San; Kim, Yong-Soo, E-mail: yongskim@hanyang.ac.kr

2016-02-01

This paper reports the surface, structural and tensile properties of proton beam irradiated pure zirconium (99.8%). The Zr samples were irradiated by 3.5 MeV protons using MC-50 cyclotron accelerator at different doses ranging from 1 × 10{sup 13} to 1 × 10{sup 16} protons/cm{sup 2}. Both un-irradiated and irradiated samples were characterized using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD) and Universal Testing Machine (UTM). The average surface roughness of the specimens was determined by using Nanotech WSxM 5.0 develop 7.0 software. The FESEM results revealed the formation of bubbles, cracks and black spots on the samples’ surface at different doses whereas the XRD results indicated the presence of residual stresses in the irradiated specimens. Williamson–Hall analysis of the diffraction peaks was carried out to investigate changes in crystallite size and lattice strain in the irradiated specimens. The tensile properties such as the yield stress, ultimate tensile stress and percentage elongation exhibited a decreasing trend after irradiation in general, however, an inconsistent behavior was observed in their dependence on proton dose. The changes in tensile properties of Zr were associated with the production of radiation-induced defects including bubbles, cracks, precipitates and simultaneous recovery by the thermal energy generated with the increase of irradiation dose.

Surface, structural and tensile properties of proton beam irradiated zirconium

Science.gov (United States)

Rafique, Mohsin; Chae, San; Kim, Yong-Soo

2016-02-01

This paper reports the surface, structural and tensile properties of proton beam irradiated pure zirconium (99.8%). The Zr samples were irradiated by 3.5 MeV protons using MC-50 cyclotron accelerator at different doses ranging from 1 × 1013 to 1 × 1016 protons/cm2. Both un-irradiated and irradiated samples were characterized using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD) and Universal Testing Machine (UTM). The average surface roughness of the specimens was determined by using Nanotech WSxM 5.0 develop 7.0 software. The FESEM results revealed the formation of bubbles, cracks and black spots on the samples' surface at different doses whereas the XRD results indicated the presence of residual stresses in the irradiated specimens. Williamson-Hall analysis of the diffraction peaks was carried out to investigate changes in crystallite size and lattice strain in the irradiated specimens. The tensile properties such as the yield stress, ultimate tensile stress and percentage elongation exhibited a decreasing trend after irradiation in general, however, an inconsistent behavior was observed in their dependence on proton dose. The changes in tensile properties of Zr were associated with the production of radiation-induced defects including bubbles, cracks, precipitates and simultaneous recovery by the thermal energy generated with the increase of irradiation dose.

Changes in optical properties of polystyrene thin films by proton beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Hwang, Sung Hyun; Jung, Jin Mook; Choi, Jae Hak [Dept. of of Polymer Science and Engineering, Chungnam National University, Daejeon (Korea, Republic of); Jung, Chan Hee; Hwang, In Tae; Shin, Jun Hwa [Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, Jeongeup(Korea, Republic of)

2017-06-15

In this study, changes in optical properties of polystyrene (PS) thin films by proton irradiation were investigated. PS thin films were irradiated with 150 keV proton ions at fluences ranging from 1 × 10{sup 15} to 1 × 10{sup 16} ions cm{sup -2}. The chemical structures and optical properties of proton beam-irradiated PS thin films were investigated by using a FT-IR spectrometer, an UVvis spectrophotometer, a photoluminescence (PL) and a fluorescence microscope. The results of the chemical structure analysis revealed that chemical functional groups, such as OH, C=O, and C=C, were formed in the PS films due to the oxidation and formation of carbon clusters by proton beam irradiation. The PL emission was generated and gradually red-shifted with an increasing fluence due to the higher formation of sp2 carbon clusters by proton beam irradiation. The highest PL intensity was obtained at a fluence of 5×10{sup 15} ions cm{sup -2}. The optical band gap of PS calculated by using a Tauc’s plot decreased with increasing the fluence due to the formation of sp2 carbon clusters by proton beam irradiation.

Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation

International Nuclear Information System (INIS)

Hiemstra, D.M.

1995-01-01

A pictorial of a sectioned view of the torus of the International Thermonuclear Experimental Reactor (ITER) is shown. Maintenance and inspection of the reactor are required to be performed remotely. This is due to the high gamma radiation environment in vessel during inspection and maintenance activities. The custom GaAs operational amplifier is to be used to readout sensors on the in-vessel manipulator and inspection equipment. The gamma dose rate during maintenance and inspection is anticipated to be 3 Mrad(GaAs)/hour. Here, dose rate and total dose dependence of the 1/f noise performance of a custom GaAs MESFET operational amplifier during irradiation are presented. Dose rate dependent 1/f noise degradation during irradiation is believed to be due to electron trapping in deep levels, enhanced by backgating and shallow traps excited during irradiation. The reduction of this affect with accumulated total dose is believed to be due a reduction of deep level site concentration associated with substitutional oxygen. Post irradiation 1/f noise degradation is also presented.The generation-recombination noise observed post irradiation can be attributed to the production of shallow traps due to ionizing radiation

Electrical characterization of proton irradiated p+-n-n+ Si diode

International Nuclear Information System (INIS)

Kim, J.H.; Lee, D.U.; Kim, E.K.; Bae, Y.H.

2006-01-01

Electrical characterization of p + -n-n + Si power electric diodes was done with proton irradiation. The kinetic energies of irradiated protons were 2.32, 2.55 and 2.97MeV, and for each energy condition, doses of 1x10 11 , 1x10 12 and 1x10 13 cm -2 were given. By modulating the kinetic energy, the proton penetration depth into Si crystal could be adjusted to the range of 55-90μm, and then controlled to the special depth regions such as junction region, depletion region and neutral region over the depletion layer in the p + -n-n + diode structure. Defects produced by the proton irradiation affected to electrical property of the Si diode because of their carrier trapping, and then the reverse recovery time was improved from 240 to 50ns. It appeared that the defect states with activation energies of 0.47 and 0.54eV may be responsible for the decrease of the minority carrier lifetime in the proton-irradiated diode with 2.97MeV energy and 1x10 13 cm -2 doses

Subnanosecond linear GaAs photoconductive switching, revision 1

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

Inactivation of HTB63 human melanoma cells by irradiation with protons and gamma rays.

Science.gov (United States)

Ristic-Fira, Aleksandra; Petrovic, Ivan; Todorovic, Danijela; Koricanac, Lela; Vujèic, Miroslava; Demajo, Miroslav; Sabini, Gabriella; Cirrone, Pablo; Cuttone, Giacomo

2004-12-01

The effects of single irradiation with gamma rays and protons on HTB63 human melanoma cell growth were compared. The exponentially growing cells were irradiated with gamma rays or protons using doses ranging from 2-20 Gy. At 48 h of post-irradiation incubation under standard conditions, cell survival and induction of apoptotic cell death were examined. The best effect of the single irradiation with gamma rays was the reduction of cell growth by up to 26% (p=0.048, irradiation vs. control), obtained using the dose of 16 Gy. The same doses of proton irradiation, having energy at the target of 22.6 MeV, significantly inhibited melanoma cell growth. Doses of 12 and 16 Gy of protons provoked growth inhibition of 48.9% (p=0.003, irradiation vs. control) and 51.2% (p=0.012, irradiation vs. control) respectively. Irradiation with 12 and 16 Gy protons, compared to the effects of the same doses of gamma rays, significantly reduced melanoma cell growth (p=0.015 and p=0.028, protons vs. gamma rays, respectively). Estimated RBEs for growth inhibition of HTB63 cells ranged from 1.02 to 1.45. The electrophoretical analyses of DNA samples and flow cytometric evaluation have shown a low percentage of apoptotic cells after both types of irradiation. The better inhibitory effect achieved by protons in contrast to gamma rays, can be explained considering specific physical properties of protons, especially taking into account the highly localized energy deposition (high LET).

Surface cracking in proton-irradiated glass

International Nuclear Information System (INIS)

Jensen, T.; Lawn, B.R.; Dalglish, R.L.; Kelly, J.C.

1976-01-01

Some observations are reported of the surface fracture behaviour of soda-lime glass slabs (6mm thick Pilkington float glass) irradiated with 480 kV protons. A simple indentation microfracture technique provided a convenient means of probing the irradiated surface regions. Basically, the technique involves loading a standard Vickers diamond pyramid indenter onto the area of interest such that a well-developed deformation/fracture pattern is generated. (author)

Impact of irradiations by protons with different energies on silicon sensors

International Nuclear Information System (INIS)

Neubueser, Coralie

2013-06-01

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Subnanosecond linear GaAs photoconductive switching: Revision 1

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

1989-01-01

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

Effect of proton irradiation on photoluminescent properties of PDMS-nanodiamond composites

International Nuclear Information System (INIS)

Borjanovic, Vesna; Hens, Suzanne; Shenderova, Olga; McGuire, Gary E; Lawrence, William G; Edson, Clark; Jaksic, Milko; Zamboni, Ivana; Vlasov, Igor

2008-01-01

Pure poly(dimethylsiloxane) (PDMS) films, PDMS-nanodiamond (ND) and pure nanodiamond powder were irradiated with 2 MeV protons under a variety of fluence and current conditions. Upon proton irradiation, these samples acquire a fluence-dependent photoluminescence (PL). The emission and excitation spectra, photostability and emission lifetime of the induced photoluminescence of PDMS and PDMS-ND samples are reported. Pure PDMS exhibits a noticeable stable blue PL, while the PDMS-ND composites exhibit a pronounced stable green PL under 425 nm excitation. The PL of PDMS-ND composites is much more prominent than that of pure PDMS or pure ND powder even when irradiated at higher doses. The origin of the significantly enhanced PL intensity for the proton-irradiated PDMS-ND composite is explained by the combination of enhanced intrinsic PL within ND particles due to ion-implantation-generated defects and by PL originating from structural transformations produced by protons at the nanodiamond/matrix interface.

Enhancement of conductance of GaAs sub-microwires under external stimuli

Science.gov (United States)

Qu, Xianlin; Deng, Qingsong; Zheng, Kun

2018-03-01

Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2016-03-31

We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.

Proton irradiation effects on optical attenuation in doped- and pure-silica fibers

International Nuclear Information System (INIS)

Sakasai, Kaoru; Bueker, H.; Haesing, F.W.; Pfeiffer, F.

1999-05-01

Optical attenuation in doped- and pure-silica fibers was measured at wavelengths of 470 nm, 660 nm, and 850 nm during and after 20 MeV proton irradiation. In the experiment the fibers were arranged on a holder to make one layer' so that uniform proton irradiation can be achieved to them. The induced loss of the doped-silica fiber increased strongly at the beginning of the first irradiation, and decreased slowly after stopping of the beam. In the second irradiation, however, the developed loss was not so large. On the other hand, the loss of the pure-silica fiber increased gradually in the first irradiation, and decreased very quickly after the beam stopped. The loss increased stepwise at the very beginning of the second irradiation. Small luminescence from the fibers during irradiation was observed also. The luminescence of the pure-silica fiber was slightly larger than that of the doped-silica fiber. The induced loss of HCP fibers was also measured when a SiO 2 plate was set in front of the fibers. It may be possible to estimate the proton dose in materials using fiber-optic technique. Proton sensitivities of doped- and pure-silica fibers were, respectively, 1.0 x 10 -10 at 660 nm and 5.5 x 10 -12 at 470 nm in units of (dB/m)/(protons/cm 2 ), where the values were estimated from the slope of the loss growth curves at the beginning of the first irradiation. (author)

Impact of irradiations by protons with different energies on silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Neubueser, Coralie

2013-06-15

In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

Vacancy-type defects in electron and proton irradiated II-VI compounds

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Balogh, A.G.; Baumann, H.

1997-01-01

In this contribution, the authors present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO

Modification of polycrystalline copper by proton irradiation; Modificacion de cobre policristalino por irradiacion con protones

Energy Technology Data Exchange (ETDEWEB)

Garcia S, F.; Cabral P, A. [Instituto Nacional de Investigaciones Nucleares, Hipodromo Condesa, 06100 Mexico D.F. (Mexico); Saniger B, J.M.; Banuelos, J.G. [UNAM Centro de Instrumentos, Mexico D.F. (Mexico); Barragan V, A. [UNAM Instituto de Fisica, Mexico D.F. (Mexico)

1997-07-01

Polished copper samples were irradiated with proton beams of 300 and 700 keV at room temperature and at -150 Centigrade. In this work the obtained results are reported when such copper irradiated samples are analysed with Sem, Tem, AFM. The Sem micrographs showed evident changes in surface of these copper samples, therefore an EDAX microanalysis was done for its characterization. additionally, the Tem micrographs showed heaps formation until 200 nm. Its electron diffraction spectra indicated that these heaps consist of a copper compound. Finally with AFM were observed changes in coloration of the irradiated sample surface, as well as changes in texture and rugosity of them. These results show in general that irradiation process with protons which is known as an innocuo process produces changes in the copper properties. (Author)

Proton irradiated graphite grades for a long baseline neutrino facility experiment

International Nuclear Information System (INIS)

Simos, N.; Nocera, P.; Zwaska, R.; Mokhov, N.

2017-01-01

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10"2"0 p/cm"2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10"2"0 cm"-"2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in

Proton irradiated graphite grades for a long baseline neutrino facility experiment

Directory of Open Access Journals (Sweden)

N. Simos

2017-07-01

Full Text Available In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF of the Deep Underground Neutrino Experiment (DUNE four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ∼6.1×10^{20}  p/cm^{2} and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ∼10^{20}  cm^{−2} where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite

Proton irradiated graphite grades for a long baseline neutrino facility experiment

Science.gov (United States)

Simos, N.; Nocera, P.; Zhong, Z.; Zwaska, R.; Mokhov, N.; Misek, J.; Ammigan, K.; Hurh, P.; Kotsina, Z.

2017-07-01

In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140-180 MeV, to peak fluence of ˜6.1 ×1020 p /cm2 and irradiation temperatures between 120 - 200 °C . The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young's modulus. The proton fluence level of ˜1020 cm-2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in

Structural changes and tribological performance of thermosetting polyimide induced by proton and electron irradiation

International Nuclear Information System (INIS)

Lv, Mei; Wang, Yanming; Wang, Qihua; Wang, Tingmei; Liang, Yongmin

2015-01-01

The structural changes and tribological performance of thermosetting polyimide were investigated by electron, proton or both combined irradiations at 25 keV in a ground-based simulation facility. Three forms of irradiations could lead to the formation of the carbonized layer on the polymer surface that could increase the hardness and adhesive force of the material. Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation by reason of the higher linear energy transfer value, and combined irradiation resulted in the largest impact, but which was less than the sum of the radiation effects of electron and proton. Moreover, the experimental results indicated that the changes in friction behavior are closely related with the carbonized layer, which was easily worn out in friction process and could introduce a shift from adhesion wear to three-body abrasive wear that reduced the wear rate and the friction coefficient. The friction process of irradiated samples could be divided into the initial stage and the steady stage. Three forms of irradiations all induced the high friction coefficient in the initial stage and the low friction coefficient in the steady stage, and the wear rate of the irradiated samples decreased in the order: electron irradiation>proton irradiation>combined irradiation. - Highlights: • Proton irradiation induced more extensive changes in structure and friction behavior than electron irradiation. • The effect of combined irradiation was less than that of the sum of electron and proton irradiation. • Three forms of irradiations all induced the high initial friction coefficient and the low steady-stage friction coefficient. • The initial friction stage means a fast-wearing adhesive process while the steady-state of the system is a three-body abrasion

Investigation of microstructure and mechanical properties of proton irradiated Zircaloy 2

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Apu, E-mail: asarkar@barc.gov.in [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Kumar, Ajay [Nuclear Physics Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India); Mukherjee, S.; Sharma, S.K.; Dutta, D.; Pujari, P.K. [Radiochemistry Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Agarwal, A.; Gupta, S.K.; Singh, P. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai, 400 085 (India); Chakravartty, J.K. [Mechanical Metallurgy Division, Bhabha Atomic Reserch Centre, Mumbai, 400 085 (India)

2016-10-15

Samples of Zircaloy 2 have been irradiated with 4 MeV protons to two different doses. Microstructures of the unirradiated and irradiated samples have been characterized by Electron Back Scatter Diffraction (EBSD), X-ray diffraction line profile analysis (XRDLPA), Positron Annihilation Lifetime Spectroscopy (PALS) and Coincident Doppler Broadening (CDB) Spectroscopy. Tensile tests and micro hardness measurements have been carried out at room temperature to assess the changes in mechanical properties of Zircaloy 2 due to proton irradiation. The correlation of dislocation density, grain size and yield stress of the irradiated samples indicated that an increase in dislocation density due to irradiation is responsible for the change in mechanical behavior of irradiated Zircaloy.

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Yaccuzzi, E.; Giudici, P. [Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Khachadorian, S.; Strittmatter, A.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Suárez, S. [Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Reinoso, M. [Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Goñi, A. R. [ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain)

2016-06-21

We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

Doping of 6H-SiC pn structures by proton irradiation

International Nuclear Information System (INIS)

Strel'chuk, Anatoly M.; Lebedev, Alexandre A.; Kozlovski, Vitali V.; Savkina, Natali S.; Davydov, Denis V.; Solov'ev, Viktor V.; Rastegaeva, Marina G.

1999-01-01

The influence of proton irradiation on current-voltage characteristics, N d - N a values and parameters of deep centres in 6H-SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10 14 to 10 16 cm -2 . Irradiation with a dose of 3.6x10 14 cm -2 leaves the voltage drop at high forward currents (10 A/cm 2 ) practically unchanged. For higher irradiation dose of 1.8x10 15 cm -2 , the forward voltage drop and the degree of compensation in the samples increased ; partial annealing of the radiation defects and partial recovery of the electrical parameters occurred after annealing at T∼400-800 K. Irradiation with a dose of 5.4x10 15 cm -2 resulted in very high resistance in forward biased pn structures which remained high even after heating to 500 deg. C. It is suggested that proton irradiation causes decreasing of the lifetime and formation of an i- or an additional p-layer

Impact of proton irradiation on deep level states in n-GaN

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

2013-01-01

Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

Growth initiation processes for GaAs and AlGaAs in CBE

International Nuclear Information System (INIS)

Hill, D.

2002-01-01

The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

Substrate Misorientation Effects On (A1,Ga)As And (Al,Ga)As/GaAs Structures Grown By Molecular Beam Epitaxy

Science.gov (United States)

Tsui, Raymond K.; Kramer, Gary D.; Curless, J. A.; Peffley, Marilyn S.

1987-04-01

(Al,Ga)As layers have rough surface morphologies when deposited under certain growth conditions in molecular beam epitaxy (MBE). This leads to poor interfaces between (A1,Ga)- As and GaAs and degraded performance in heterojunction devices. We have observed that by misorienting the substrate slightly from (100), in a manner specific to the growth conditions, smooth (Al,Ga)As layers 3-4 μm thick can be grown at a rate of ≍ 1 μm/h for various AlAs mole fractions, x. Similar conditions for nominal (100) result in a rough, textured morphology. Experiments were carried out using flat substrates of specific misorientations as well as lens-shaped substrates. The lenticular substrates allowed all orientations within 14° of (100) [i.e., out to (511)] to be evaluated in one growth run. Deposition conditions that were varied included x, substrate temperature, and V/III beam flux ratio. Smooth layers obtained using optimal misorientations showed superior optical characteris-tics as determined from low-temperature photoluminescence (PL) measurements. The 4.2K PL spectra of smooth layers exhibit well-resolved exciton-related peaks, and do not have the deeper-level defect-related peaks observed in the spectra of rough layers. Single quantum well structures with A10.3Ga0.7As barriers and a 100 A-wide GaAs well deposited on mis-oriented substrates also have superior optical properties compared to a structure grown on nominal (100). Such findings may have significant implications for the performance of heterojunction device structures grown by MBE.

Growth of cubic GaN on a nitrided AlGaAs (001) substrate by using hydried vapor phase epitaxy

International Nuclear Information System (INIS)

Lee, H. J.; Yang, M.; Ahn, H. S.; Kim, K. H.; Yi, J. Y.; Jang, K. S.; Chang, J. H.; Kim, H. S.; Cho, C. R.; Kim, S. W.

2006-01-01

GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH 3 atmosphere at a temperature range of 550 - 700 .deg. C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.

Identification of defects in GaAs induced by 1 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Lai, S.T.; Nener, B.D.; Faraone, L.; Nassibian, A.G. [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M.A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1993-12-31

This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

Identification of defects in GaAs induced by 1 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Lai, S T; Nener, B D; Faraone, L; Nassibian, A G [Western Australia Univ., Nedlands, WA (Australia); Hotchkis, M A.C. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

1994-12-31

This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

International Nuclear Information System (INIS)

Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

2014-01-01

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs 1-x N x /GaAs 1-x N x :H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs 0.991 N 0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs 0.992 N 0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence

Magnetic properties of point defects in proton irradiated diamond

Energy Technology Data Exchange (ETDEWEB)

Makgato, T.N., E-mail: Thuto.Makgato@students.wits.ac.za [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Sideras-Haddad, E. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa); Ramos, M.A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de la Materia Condensada, Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain); Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A. [CMAM, Centro de Micro-Analisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, Campus de Cantoblanco, E-28049 Madrid (Spain); Shrivastava, S. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg 2050 (South Africa); Center of Excellence in Strong Materials, Physics Building, University of the Witwatersrand, Johannesburg 2050 (South Africa)

2016-09-01

We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ{sub eff}~(0.1–0.2)μ{sub B}. No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ{sub eff}~(0.1–0.2)μ{sub B}. • No evidence of long range magnetic ordering is observed.

Magnetic properties of point defects in proton irradiated diamond

International Nuclear Information System (INIS)

Makgato, T.N.; Sideras-Haddad, E.; Ramos, M.A.; García-Hernández, M.; Climent-Font, A.; Zucchiatti, A.; Muñoz-Martin, A.; Shrivastava, S.; Erasmus, R.

2016-01-01

We investigate the magnetic properties of ultra-pure type-IIa diamond following irradiation with proton beams of ≈1–2 MeV energy. SQUID magnetometry indicate the formation of Curie type paramagnetism according to the Curie law. Raman and Photoluminescence spectroscopy measurements show that the primary structural features created by proton irradiation are the centers: GR1, ND1, TR12 and 3H. The Stopping and Range of Ions in Matter (SRIM) Monte Carlo simulations together with SQUID observations show a strong correlation between vacancy production, proton fluence and the paramagnetic factor. At an average surface vacancy spacing of ≈1–1.6 nm and bulk (peak) vacancy spacing of ≈0.3-0.5 nm Curie paramagnetism is induced by formation of ND1 centres with an effective magnetic moment μ eff ~(0.1–0.2)μ B . No evidence of long range magnetic ordering is observed in the temperature range 4.2-300 K. - Highlights: • Proton macro-irradiation of pure diamond creates fluence dependent paramagnetism. • The effective magnetic moment is found to be in the range μ eff ~(0.1–0.2)μ B . • No evidence of long range magnetic ordering is observed.

Effect of 200 keV proton irradiation on the properties of methyl silicone rubber

International Nuclear Information System (INIS)

Zhang Lixin; Xu Zhou; Wei Qiang; He Shiyu

2006-01-01

The effects of 200 keV proton irradiation on methyl silicone rubber were studied. The changes in surface morphology, mechanical properties, cross-linking density, glass transition temperature, infrared attenuated total reflection spectrum and mass spectrum indicated that, at lower fluence, the proton irradiation induced cross-linking, resulting in an increase in tensile strength and hardness of the methyl silicone rubber. However, at higher proton fluence, radiation-induced degradation, which decreased the tensile strength and hardness, became dominant. A macromolecular-network destruction model for silicone rubber irradiated with protons was proposed

Effects of proton irradiation on electronic structure of NdFeB permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: lzhen@hit.edu.cn; Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2009-09-15

Effects of proton irradiation on electronic structure and atomic local structure of N35EH-type NdFeB permanent magnet were investigated by soft X-ray absorption spectrometry and Moessbauer spectrometry. The local coordination environment of Fe atoms changes after proton irradiation, and the average hyperfine field H{sub in} of the magnets decreases from 288.4 to 286.9 kOe. The effects of irradiation on Fe atoms local environment at different lattice sites are different. The near edge structure of Fe L{sub 3} edge is changed, indicating the density of unoccupied state of Fe 3d electrons increases after proton irradiation.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.; Schmieder, K. J.; Walters, R. J.; Jenkins, P. P. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, D.C. 20375 (United States); Bennett, M. F. [Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

HTB140 melanoma cells under proton irradiation and/or alkylating agents

Science.gov (United States)

Korićanac, L.; Petrović, I.; Privitera, G.; Cuttone, G.; Ristić-Fira, A.

2007-09-01

Chemoresistance is a major problem in the treatment of malignant melanoma. The mainstay of treatment for melanoma is the DNA-alkylating agent dacarbazine (DTIC). Fotemustine (FM), a member of the chloroethylnitrosourea group of alkylating agents, has also demonstrated significant antitumor effects in malignant melanoma. However, the intrinsic and acquired resistance of melanoma limits the clinical application of these drugs. Melanomas are also extremely radioresistant. With the objective of enhancing growth inhibition of melanoma cells, combined treatments of FM or DTIC with proton irradiation have been investigated. These effects were studied on HTB140 melanoma cell viability and proliferation. Cells exposed to treatment with FM and protons have shown inhibition of cell growth and significant reduction of proliferation capacity compared to single irradiation or drug treatment. Treatment with DTIC and protons has shown improved growth inhibition compared to appropriate single drug treatment, while the effects of single proton irradiation have been the most pronounced.

Anomalous effects in silicon solar cell irradiated by 1-MeV protons

Science.gov (United States)

Kachare, R.; Anspaugh, B. E.

1989-01-01

Several silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.

Decoration of dislocations by proton irradiation of halite

International Nuclear Information System (INIS)

Bird, J.R.; Rose, A.; Wilkins, R.W.T.

1981-01-01

Proton irradiation of halite (NaCl) at temperatures in the range 150-220 0 C produces a variety of colours from yellow/brown through blue to violet/red. Under suitable conditions, colour bands are formed which decorate dislocations and colour other crystal features. One beam line of the Lucas Heights 3 MV Van de Graaff accelerator has been adapted to permit the measurement of optical absorption spectra during proton irradiation of heated crystals. The results show that colour centre formation is a more complex process than has been previously reported, even for synthetic NaCl crystals. The dependence of absorption at various wavelengths on dose, dose rate, temperature, strain and exposure to light is being used to study the different quasi-equilibrium concentrations of colour centres involved in the decoration process. Proton induced X-ray measurements provide information on the presence of impurities which can have an important influence on colour centre formation. (orig.)

Proton irradiation effects of amorphous silicon solar cell for solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

1997-03-01

Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

International Nuclear Information System (INIS)

Tanaka, Akiyo

2004-01-01

Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

Effects of fotemustine or dacarbasine on a melanoma cell line pretreated with therapeutic proton irradiation

Directory of Open Access Journals (Sweden)

Privitera Giuseppe

2009-04-01

Full Text Available Abstract Background Considering that HTB140 melanoma cells have shown a poor response to either protons or alkylating agents, the effects of a combined use of these agents have been analysed. Methods Cells were irradiated in the middle of the therapeutic 62 MeV proton spread out Bragg peak (SOBP. Irradiation doses were 12 or 16 Gy and are those frequently used in proton therapy. Four days after irradiation cells were treated with fotemustine (FM or dacarbazine (DTIC. Drug concentrations were 100 and 250 μM, values close to those that produce 50% of growth inhibition. Cell viability, proliferation, survival and cell cycle distribution were assessed 7 days after irradiation that corresponds to more than six doubling times of HTB140 cells. In this way incubation periods providing the best single effects of drugs (3 days and protons (7 days coincided at the same time. Results Single proton irradiations have reduced the number of cells to ~50%. FM caused stronger cell inactivation due to its high toxicity, while the effectiveness of DTIC, that was important at short term, almost vanished with the incubation of 7 days. Cellular mechanisms triggered by proton irradiation differently influenced the final effects of combined treatments. Combination of protons and FM did not improve cell inactivation level achieved by single treatments. A low efficiency of the single DTIC treatment was overcome when DTIC was introduced following proton irradiation, giving better inhibitory effects with respect to the single treatments. Most of the analysed cells were in G1/S phase, viable, active and able to replicate DNA. Conclusion The obtained results are the consequence of a high resistance of HTB140 melanoma cells to protons and/or drugs. The inactivation level of the HTB140 human melanoma cells after protons, FM or DTIC treatments was not enhanced by their combined application.

ASTRO-H CdTe detectors proton irradiation at PIF

International Nuclear Information System (INIS)

Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

2015-01-01

Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

Efficiency of respiratory-gated delivery of synchrotron-based pulsed proton irradiation

International Nuclear Information System (INIS)

Tsunashima, Yoshikazu; Vedam, Sastry; Dong, Lei; Bues, Martin; Balter, Peter; Smith, Alfred; Mohan, Radhe; Umezawa, Masumi; Sakae, Takeji

2008-01-01

Significant differences exist in respiratory-gated proton beam delivery with a synchrotron-based accelerator system when compared to photon therapy with a conventional linear accelerator. Delivery of protons with a synchrotron accelerator is governed by a magnet excitation cycle pattern. Optimal synchronization of the magnet excitation cycle pattern with the respiratory motion pattern is critical to the efficiency of respiratory-gated proton delivery. There has been little systematic analysis to optimize the accelerator's operational parameters to improve gated treatment efficiency. The goal of this study was to estimate the overall efficiency of respiratory-gated synchrotron-based proton irradiation through realistic simulation. Using 62 respiratory motion traces from 38 patients, we simulated respiratory gating for duty cycles of 30%, 20% and 10% around peak exhalation for various fixed and variable magnet excitation patterns. In each case, the time required to deliver 100 monitor units in both non-gated and gated irradiation scenarios was determined. Based on results from this study, the minimum time required to deliver 100 MU was 1.1 min for non-gated irradiation. For respiratory-gated delivery at a 30% duty cycle around peak exhalation, corresponding average delivery times were typically three times longer with a fixed magnet excitation cycle pattern. However, when a variable excitation cycle was allowed in synchrony with the patient's respiratory cycle, the treatment time only doubled. Thus, respiratory-gated delivery of synchrotron-based pulsed proton irradiation is feasible and more efficient when a variable magnet excitation cycle pattern is used

The martensitic transformation of Ti–Ni shape memory thin films under proton irradiation

International Nuclear Information System (INIS)

Gao, Z.Y.; Wang, H.Z.; Zhu, Y.Y.; Meng, X.L.; Cai, W.

2015-01-01

The martensitic transformation behavior of a Ti–Ni alloy irradiated by proton with different doses has been investigated. It is found that the samples irradiated by 150 keV protons have a two-step phase transformation during heating and only one-step transformation during cooling. The exothermic peak at higher temperature disappears during the following thermal cycling. A model based on the stress-assisted martensitic transformation was established by the Transport of Ions in Matter (TRIM) calculations in order to explain the transformation behavior. - Highlights: • Martensitic transformation behavior of TiNi alloy under proton irradiation • Two-step transformation appears upon heating for a sample irradiated at 150 keV. • One-step transformation appears upon cooling for a sample irradiated at 150 keV. • In the following thermal cycling, the higher temperature exothermic peak vanishes

Radiation stability of proton irradiated zirconium carbide

International Nuclear Information System (INIS)

Yang, Yong; Dickerson, Clayton A.; Allen, Todd R.

2009-01-01

The use of zirconium carbide (ZrC) is being considered for the deep burn (DB)-TRISO fuel as a replacement for the silicon carbide coating. The radiation stability of ZrC was studied using 2.6 MeV protons, across the irradiation temperature range from 600 to 900degC and to doses up to 1.75 dpa. The microstructural characterization shows that the irradiated microstructure is comprised of a high density of nanometer-sized dislocation loops, while no irradiation induced amorphization or voids are observed. The lattice expansion induced by point defects is found to increase as the dose increases for the samples irradiated at 600 and 800degC, while for the 900degC irradiation, a slight lattice contraction is observed. The radiation hardening is also quantified using a micro indentation technique for the temperature and doses studies. (author)

High-energy proton irradiation of C57Bl6 mice under hindlimb unloading

Science.gov (United States)

Mendonca, Marc; Todd, Paul; Orschell, Christie; Chin-Sinex, Helen; Farr, Jonathan; Klein, Susan; Sokol, Paul

2012-07-01

Solar proton events (SPEs) pose substantial risk for crewmembers on deep space missions. It has been shown that low gravity and ionizing radiation both produce transient anemia and immunodeficiencies. We utilized the C57Bl/6 based hindlimb suspension model to investigate the consequences of hindlimb-unloading induced immune suppression on the sensitivity to whole body irradiation with modulated 208 MeV protons. Eight-week old C57Bl/6 female mice were conditioned by hindlimb-unloading. Serial CBC and hematocrit assays by HEMAVET were accumulated for the hindlimb-unloaded mice and parallel control animals subjected to identical conditions without unloading. One week of hindlimb-unloading resulted in a persistent, statistically significant 10% reduction in RBC count and a persistent, statistically significant 35% drop in lymphocyte count. This inhibition is consistent with published observations of low Earth orbit flown mice and with crewmember blood analyses. In our experiments the cell count suppression was sustained for the entire six-week period of observation and persisted for at least 7 days beyond the period of active hindlimb-unloading. C57Bl/6 mice were also irradiated with 208 MeV Spread Out Bragg Peak (SOBP) protons at the Midwest Proton Radiotherapy Institute at the Indiana University Cyclotron Facility. We found that at 8.5 Gy hindlimb-unloaded mice were significantly more radiation sensitive with 35 lethalities out of 51 mice versus 15 out of 45 control (non-suspended) mice within 30 days of receiving 8.5 Gy of SOBP protons (p =0.001). Both control and hindlimb-unloaded stocktickerCBC analyses of 8.5 Gy proton irradiated and control mice by HEMAVET demonstrated severe reductions in WBC counts (Lymphocytes and PMNs) by day 2 post-irradiation, followed a week to ten days later by reductions in platelets, and then reductions in RBCs about 2 weeks post-irradiation. Recovery of all blood components commenced by three weeks post-irradiation. CBC analyses of 8

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

Directory of Open Access Journals (Sweden)

Heyn Ch

2010-01-01

Full Text Available Abstract We study the optical emission of single GaAs quantum dots (QDs. The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size.

Radiation-induced effects in GaAs thin-film optical (10.6 μm) waveguides

International Nuclear Information System (INIS)

Share, S.; Epstein, A.S.; Monse, T.; Chang, W.S.C.; Chang, M.S.

1976-01-01

Two types of GaAs thin-film optical waveguide structures operating at 10.6 μm were examined before and after exposure to neutron and γ irradiation. The attenuation rate of the GaAs/n + -GaAs structure was particularly sensitive to neutron irradiation of 10 13 cm -2 and exhibited postirradiation annealing at 150 0 C. This is in contrast to the relative neutron irradiation insensitivity of a GaAs/GaAs 1 /sub -//subx/P/subx//n + -GaAs structure. The effect of γ radiation is less pronounced for both structures. The radiation-induced changes are discussed in terms of free-carrier absorption, index of refraction, scattering centers, and absorption by complexes

Role of the substrate in monolithic AlGaAs nonlinear nanoantennas

Directory of Open Access Journals (Sweden)

Gili Valerio Flavio

2017-06-01

Full Text Available We report the effect of the aluminum oxide substrate on the emission of monolithic AlGaAs-on-insulator nonlinear nanoantennas. By coupling nonlinear optical measurements with electron diffraction and microscopy observations, we find that the oxidation-induced stress causes negligible crystal deformation in the AlGaAs nanostructures and only plays a minor role in the polarization state of the harmonic field. This result highlights the reliability of the wet oxidation of thick AlGaAs optical substrates and further confirms the bulk χ(2 origin of second harmonic generation at 1.55 μm in these nanoantennas, paving the way for the development of AlGaAs-on-insulator monolithic metasurfaces.

Characterizations of Proton-irradiated wide bandgap semiconductor devices

International Nuclear Information System (INIS)

Kim, J. H.; Kim, H. R.; Ahn, J. H.

2008-04-01

Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5keV protons severely damaged the transistors' performance compared to 25MeV protons. Also, the effects of both lower and higher fluencies were compared. Source-Drain currents were dramatically decreased under higher fluency. At the highest dose of 2x10 16 protons/cm 2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data is consistent with the introduction of defect centers in the HEMT structure by the high energy protons leading to a reduction in carrier concentration and mobility in the 2- dimensional electron gas channel due to the extremely thin 2DEG and the high displacement threshold energy, AlGaN/GaN HEMT has great potential for applications in earth orbit

Production of fast switching power thyristors by proton irradiation

International Nuclear Information System (INIS)

Sawko, D.C.; Bartko, J.

1983-01-01

There are several techniques currently employed by various manufacturers in the fabrication of fast switching power thyristors. Gold doping and irradiation by electron beams are among the more common ones. In all cases, the fast switching capability results from a reduction of the minority carrier lifetime of the host material by the introduction of carrier traps or recombination centers. However, accompanying this beneficial reduction in switching speed is a deleterious increase in forward voltage drop which also results from the introduction of carrier traps. Methods which minimize the voltage drop increase as the switching speed is reduced are highly desirable. One such method would achieve this by introducing the traps or recombination centers into well defined narrow regions where they will be more effective in reducing the switching speed than in increasing the forward voltage drop. Because the proton range-energy relationship in materials is relatively well defined and the lifetime reducing displacements occur near the end of their ranges, the lifetime in silicon can be reduced where desired by the precise control of proton energy. Dual energy proton beams from a tandem Van de Graaff accelerator were used in the experiments to determine whether proton beam irradiations offer advantages over other techniques. This was the subject of the present work. The results indicate that this is the preferred technique for reproducibly and rapidly processing fast switching thyristors with superior characteristics. The experimental procedure is discussed and comparisons are made with electron and neutron irradiated thyristors

Nano-scale chemical evolution in a proton-and neutron-irradiated Zr alloy

Energy Technology Data Exchange (ETDEWEB)

Harte, Allan, E-mail: allan.harte@manchester.ac.uk [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Topping, M.; Frankel, P. [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Jädernäs, D. [Studsvik Nuclear AB, SE 611 82, Nyköping (Sweden); Romero, J. [Westinghouse Electric Company, Columbia, SC (United States); Hallstadius, L. [Westinghouse Electric Sweden AB, SE 72163 Västerås (Sweden); Darby, E.C. [Rolls Royce Plc., Nuclear Materials, Derby (United Kingdom); Preuss, M. [The University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom)

2017-04-15

Proton-and neutron-irradiated Zircaloy-2 are compared in terms of the nano-scale chemical evolution within second phase particles (SPPs) Zr(Fe,Cr){sub 2} and Zr{sub 2}(Fe,Ni). This is accomplished through ultra-high spatial resolution scanning transmission electron microscopy and the use of energy-dispersive X-ray spectroscopic methods. Fe-depletion is observed from both SPP types after irradiation with both irradiative species, but is heterogeneous in the case of Zr(Fe,Cr){sub 2}, predominantly from the edge region, and homogeneously in the case of Zr{sub 2}(Fe,Ni). Further, there is evidence of a delay in the dissolution of the Zr{sub 2}(Fe,Ni) SPP with respect to the Zr(Fe,Cr){sub 2}. As such, SPP dissolution results in matrix supersaturation with solute under both irradiative species and proton irradiation is considered well suited to emulate the effects of neutron irradiation in this context. The mechanisms of solute redistribution processes from SPPs and the consequences for irradiation-induced growth phenomena are discussed. - Highlights: •Protons emulate the effects of neutron irradiation in the evolution of chemistry and morphology of second phase particles. •Detailed energy-dispersive X-ray spectroscopy reveals heterogeneity in Zr-Fe-Cr SPPs both before and after irradiation. •Zr-Fe-Ni SPPs are delayed in irradiation-induced dissolution due to their better self-solubility with respect to Zr-Fe-Cr.

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Effects of High-Energy Proton-Beam Irradiation on the Magnetic Properties of ZnO Nanorods

Energy Technology Data Exchange (ETDEWEB)

Park, Jun Kue; Kwon, Hyeok-Jung; Cho, Yong Sub [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-10-15

There are still many problem for the application due to its unstable magnetism state and too small magnetization values. Here we investigate magnetic properties of ZnO nanorods after high-energy proton-beam irradiation. Electron spin resonance (ESR) measurement on temperature was made to identify intrinsic or extrinsic defects as well as to observe magnetic ordering after irradiation. Understanding the effects of proton beam irradiation on magnetic behavior may help to shed light on the mechanism responsible for the magnetic ordering in this material. We have investigated proton-beam irradiation effects on the magnetic properties of ZnO nanorods. After irradiation a broad ESR line is observed, indicating emergence of ferromagnetic ordering up to room temperature. In M-H curve, stronger coercive field is observed after irradiation.

Analysis of Giant-nucleated Cell Formation Following X-ray and Proton Irradiations

Science.gov (United States)

Almahwasi, Ashraf Abdu

Radiation-induced genetic instability has been observed in survivors of irradiated cancerous and normal cells in vitro and in vivo and has been determined in different forms, such as delayed cell death, chromosomal aberration or mutation. A well defined and characterized normal human-diploid AG1522 fibroblast cell line was used to study giant-nucleated cell (GCs) formation as the ultimate endpoint of this research. The average nuclear cross-sectional areas of the AG1522 cells were measured in mum2. The doubling time required by the AG1522 cells to divide was measured. The potential toxicity of the Hoechst dye at a working concentration on the live AG1522 cells was assessed. The yield of giant cells was determined at 7, 14 and 21 days after exposure to equivalent clinical doses of 0.2, 1 or 2 Gy of X-ray or proton irradiation. Significant differences were found to exist between X-ray or proton irradiation when compared with sham-irradiated control populations. The frequency of GCs induced by X-rays was also compared to those formed in proton irradiated cultures. The results confirm that 1 Gy X-rays are shown to induce higher rates of mitotically arrested GCs, increasing continually over time up to 21 days post-irradiation. The yield of GCs was significantly greater (10%) compared to those formed in proton populations (2%) 21 days postirradiation. The GCs can undergo a prolonged mitotic arrest that significantly increases the length of cell cycle. The arrest of GCs at the mitotic phase for longer periods of time might be indicative of a strategy for cell survival, as it increases the time available for DNA repair and enables an alternative route to division for the cells. However, the reduction in their formation 21 days after both types of radiation might favour GCs formation, ultimately contributing to carcinogenesis or cancer therapy resistance. The X-ray experiments revealed a dose-dependent increase in the GCs up to 14 days after irradiation. Although the proton

Formation of Cavities at and Away from Grain Boundaries during 600 MeV Proton Irradiation

DEFF Research Database (Denmark)

Singh, Bachu Narain; Leffers, Torben; Green, W. V.

1982-01-01

High-purity aluminium (99.9999%) was irradiated with 600 MeV protons at the Swiss Institute for Nuclear Research (SIN) with a damage rate of 3,5 x 10^-6 dpa/s. Irradiation with 600 MeV protons produces helium, hydrogen, and other impurities through mutational reactions. The irradiation experiment...

Analytical dose modeling for preclinical proton irradiation of millimetric targets.

Science.gov (United States)

Vanstalle, Marie; Constanzo, Julie; Karakaya, Yusuf; Finck, Christian; Rousseau, Marc; Brasse, David

2018-01-01

Due to the considerable development of proton radiotherapy, several proton platforms have emerged to irradiate small animals in order to study the biological effectiveness of proton radiation. A dedicated analytical treatment planning tool was developed in this study to accurately calculate the delivered dose given the specific constraints imposed by the small dimensions of the irradiated areas. The treatment planning system (TPS) developed in this study is based on an analytical formulation of the Bragg peak and uses experimental range values of protons. The method was validated after comparison with experimental data from the literature and then compared to Monte Carlo simulations conducted using Geant4. Three examples of treatment planning, performed with phantoms made of water targets and bone-slab insert, were generated with the analytical formulation and Geant4. Each treatment planning was evaluated using dose-volume histograms and gamma index maps. We demonstrate the value of the analytical function for mouse irradiation, which requires a targeting accuracy of 0.1 mm. Using the appropriate database, the analytical modeling limits the errors caused by misestimating the stopping power. For example, 99% of a 1-mm tumor irradiated with a 24-MeV beam receives the prescribed dose. The analytical dose deviations from the prescribed dose remain within the dose tolerances stated by report 62 of the International Commission on Radiation Units and Measurements for all tested configurations. In addition, the gamma index maps show that the highly constrained targeting accuracy of 0.1 mm for mouse irradiation leads to a significant disagreement between Geant4 and the reference. This simulated treatment planning is nevertheless compatible with a targeting accuracy exceeding 0.2 mm, corresponding to rat and rabbit irradiations. Good dose accuracy for millimetric tumors is achieved with the analytical calculation used in this work. These volume sizes are typical in mouse

Raman study of low-temperature-grown Al0.29Ga0.71ASGaAs photorefractive materials

International Nuclear Information System (INIS)

Guo, L.W.; Han, Y.J.; Hu, C.Y.; Tan, P.H.; Yang, F.H.; Huang, Q.; Zhou, J.M.

2002-01-01

We report on the observation of resonant Raman scattering in low-temperature-grown AlGaASGaAs structure. Two kinds of excitation lights, 632.8 and 488 nm laser lines, were used to detect scattering signal from different regions based on different penetration depths. Under the outgoing resonant condition, up to fourth-order resonant Raman peaks were observed in the low-temperature-grown AlGaAs alloy, owing to a broad exciton luminescence in low-temperature-grown AlGaAs alloy induced by intrinsic defects and As cluster after post-annealing. These resonant peaks were assigned according to their fundamental modes. Among the resonant peaks, besides the overtones of the GaAs- or AlAs-like mode, there exist combination bands of these two kinds of modes. In addition, a weak scattering peak similar to the bulk GaAs longitudinal optical mode was observed in low-temperature Raman experiments. We consider the weak signal correlated with GaAs clusters appearing in AlGaAs alloys. The accumulation of GaAs in AlGaAs alloys was enhanced after annealing at high temperatures. A detailed study of the dependence of vibration modes on measuring temperature and post-annealing conditions is given also. In light of our experiments, it is suggested that a Raman scattering experiment is a sensitive microscopic probe of local disorder and, especially performed at low temperature, is a superior method in detecting and analyzing the weak interaction between phonons and electrons

Parameterisation of radiation effects on CVD diamond for proton irradiation

International Nuclear Information System (INIS)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.

1999-01-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5 * 10 15 protons/cm 2 . The results not only show radiation damage but also an annealing effect that is dominant at levels around 10 15 protons/cm 2 . A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels

Compaction of PDMS due to proton beam irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Huszank, R.; Rajta, I.; Kokavecz, J.

2011-01-01

Complete text of publication follows. This work is about the detailed investigation of the changes of the surface topography, the degree of compaction/shrinkage and its relation to the irradiation fluence and the structure spacing in poly(dimethylsiloxane) (PDMS) patterned with 2 MeV proton microbeam. Sylgard 184 kit (Dow-Corning) was used to create the PDMS samples. The density of the PDMS samples was determined with pycnometer. The penetration depth for 2 MeV protons is ∼85 μm, the PDMS layer was ∼95 μm thick, so the incident protons stop in the PDMS, they do not reach the substrate. The irradiations have been performed at the nuclear microprobe facility at ATOMKI. The irradiated periodic structures consisted of parallel lines with different widths and spacing. To achieve different degrees of compaction, each structure was irradiated with five different fluences. The surface topography, the phase modification of the surface, and the connection between them were revealed using an atomic force microscope (AFM PSIA XE 100). The shrinkage data were obtained from the topography images. The structures with different line widths and spacing show different degrees of compaction as a function of irradiation fluence. By plotting them in the same graph (Fig. 1) it is clearly seen that the degree of compaction depends on both the irradiation fluence and the distance of the structures. The fluence dependence of the compaction can be explained with the chemical changes of PDMS. When an energetic ion penetrates through the material it scissions the polymer chain, whereupon among other things volatile products form. In the case of PDMS, these are mainly hydrogen, methane and ethane gases that can be released from PDMS. The irradiated volume shrinks due to significant structural change during which silicate derivatives (SiO x ) are formed. The phase change and the corresponding surface topography was compared and studied at all applied irradiation fluences. It was concluded

Degradation of SiGe devices by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Ohyama, Hidenori; Hayama, Kiyoteru [Kumamoto National Coll. of Technology, Nishigoshi (Japan); Vanhellemont, J; Takami, Yasukiyo; Sunaga, Hiromi; Nashiyama, Isamu; Uwatoko, Yoshiya; Poortmans, J; Caymax, M

1997-03-01

The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)

Defect structure in proton-irradiated copper and nickel

International Nuclear Information System (INIS)

Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

1987-01-01

This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

Survival of tumor cells after proton irradiation with ultra-high dose rates

International Nuclear Information System (INIS)

Auer, Susanne; Hable, Volker; Greubel, Christoph; Drexler, Guido A; Schmid, Thomas E; Belka, Claus; Dollinger, Günther; Friedl, Anna A

2011-01-01

Laser acceleration of protons and heavy ions may in the future be used in radiation therapy. Laser-driven particle beams are pulsed and ultra high dose rates of >10 9 Gy s -1 may be achieved. Here we compare the radiobiological effects of pulsed and continuous proton beams. The ion microbeam SNAKE at the Munich tandem accelerator was used to directly compare a pulsed and a continuous 20 MeV proton beam, which delivered a dose of 3 Gy to a HeLa cell monolayer within < 1 ns or 100 ms, respectively. Investigated endpoints were G2 phase cell cycle arrest, apoptosis, and colony formation. At 10 h after pulsed irradiation, the fraction of G2 cells was significantly lower than after irradiation with the continuous beam, while all other endpoints including colony formation were not significantly different. We determined the relative biological effectiveness (RBE) for pulsed and continuous proton beams relative to x-irradiation as 0.91 ± 0.26 and 0.86 ± 0.33 (mean and SD), respectively. At the dose rates investigated here, which are expected to correspond to those in radiation therapy using laser-driven particles, the RBE of the pulsed and the (conventional) continuous irradiation mode do not differ significantly

Changes of initiation, promotion and metastatic enzyme system in human breast cancer with the proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Sohn, Y. H.; Kim, S. W.; Lee, K. S.; Mo, J. Y. [Dongguk University, Seoul (Korea, Republic of)

2010-04-15

Proton irradiations in the cells were significantly decreased cell viability but increased the QR activity in a dose-dependent manner. Cell viability was 92.3%, 88.4%, 81.8%, 72.4%, 68.9% at doses of 0.5, 2, 8, 16, and 32 Gy, respectively. At doses of 2, 8, 16, and 32 Gy, QR activity was increased 1.27-, 1.31-, 1.45- and 2.08-fold. However, negligible GST activity in the cells was detected and the activity was not changed by proton irradiation. Proton irradiation also increased GSH contents by 1.18- and 1.21-fold at doses of 0.5 and 2 Gy. In contrast, the ODC activity, a key enzyme in polyamine biosynthesis and tumor promotion, was decreased in a dose-dependent manner. We also investigated anti-metastatic effects of proton beam irradiation in breast cancer cells. Invasion and wound healing assay showed that metastatic activities in breast cancer cells were significantly decreased in a dose-dependent manner by proton beam irradiation. In zymography of MMP-9, the activity was slightly diminished. These results suggest that breast cancer chemopreventive potential was increased with proton irradiation by increasing the QR activity and the GSH levels and by inhibiting the ODC activity.

Changes of initiation, promotion and metastatic enzyme system in human breast cancer with the proton irradiation

International Nuclear Information System (INIS)

Sohn, Y. H.; Kim, S. W.; Lee, K. S.; Mo, J. Y.

2010-04-01

Proton irradiations in the cells were significantly decreased cell viability but increased the QR activity in a dose-dependent manner. Cell viability was 92.3%, 88.4%, 81.8%, 72.4%, 68.9% at doses of 0.5, 2, 8, 16, and 32 Gy, respectively. At doses of 2, 8, 16, and 32 Gy, QR activity was increased 1.27-, 1.31-, 1.45- and 2.08-fold. However, negligible GST activity in the cells was detected and the activity was not changed by proton irradiation. Proton irradiation also increased GSH contents by 1.18- and 1.21-fold at doses of 0.5 and 2 Gy. In contrast, the ODC activity, a key enzyme in polyamine biosynthesis and tumor promotion, was decreased in a dose-dependent manner. We also investigated anti-metastatic effects of proton beam irradiation in breast cancer cells. Invasion and wound healing assay showed that metastatic activities in breast cancer cells were significantly decreased in a dose-dependent manner by proton beam irradiation. In zymography of MMP-9, the activity was slightly diminished. These results suggest that breast cancer chemopreventive potential was increased with proton irradiation by increasing the QR activity and the GSH levels and by inhibiting the ODC activity.

Effect of proton and electron-irradiation intensity on radiation-induced damages in silicon bioolar transistors

International Nuclear Information System (INIS)

Bannikov, Yu.A.; Gorin, B.M.; Kozhevnikov, V.P.; Mikhnovich, V.V.; Gusev, L.I.

1981-01-01

The increase of radiation-induced damages of bipolar n-p-n transistors 8-12 times with the irradiation intensity decrease by protons from 4.07x1010 to 2.5x107 cm-2 x c-1 has been found experimentally. damages of p-n-p transistors vary in the opposite way - they are decreased 2-3 times with the irradiation intensity decrease within the same limits. the dependence of damages on intansity of proton irradiation occurs at the dose rate by three orders less than it has been observed for electron irradiation. the results obtained are explained by the dependence of radiation defectoformation reactions on charge state of defects with account for the role of formation of disordering regions upon proton irradiation [ru

An overview of the PIREX Proton Irradiation facility and its research program

Energy Technology Data Exchange (ETDEWEB)

Victoria, M.; Gavillet, D. [Association EURATOM, Villigen (Switzerland)

1995-10-01

The main design characteristics of PIREX (Proton Irradiation Experiment) are described. The facility is installed in the 590 MeV proton beam of the PSI accelerator system. Its main task is the irradiation and testing of fusion reactor candidate materials. Protons of this energy produce simultaneously in the target material displacement damage and impurities, amongst them helium. They can therefore simulate possible synergistic effects between helium and damage that would result from irradiations with the fusion neutrons. The research program being developed includes studies on both materials of technological interest, such as martensitic stainless steels and Mo - based alloys and basic radiation damage research on pure metals. The facility is also being used for actinide transmutation studies, in the so called ATHENA experiment. The main directions of the research program are described and examples of present results are given.

Determination of proton and neutron spectra in the LANSCE spallation irradiation facility

International Nuclear Information System (INIS)

James, M.R.; Maloy, S.A.; Sommer, W.F.; Fowler, M.M.; Dry, D.; Ferguson, P.D.; Mueller, G.; Corzine, R.K.

1999-01-01

Materials samples were recently irradiated in the Los Alamos Radiation Effects Facility (LASREF) at the Los Alamos Neutron Science Center (LANSCE) to provide data for the Accelerator Production of Tritium (APT) project on the effect of irradiation on the mechanical and physical properties of materials. The targets were configured to expose samples to a variety of radiation environments including, high-energy protons, mixed protons and high-energy neutrons, and low-energy neutrons. The samples were irradiated for approximately six months during a ten month period using an 800 MeV proton beam with a circular Gaussian shape of approximately 2σ = 3.0 cm. At the end of this period, the samples were extracted and tested. Activation foils were also extracted that had been placed in proximity to the materials samples. These were used to quantify the fluences in various locations

Parameterisation of radiation effects on CVD diamond for proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M

1999-08-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5{sup *}10{sup 15} protons/cm{sup 2}. The results not only show radiation damage but also an annealing effect that is dominant at levels around 10{sup 15} protons/cm{sup 2}. A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels.

DNA double strand breaks and Hsp70 expression in proton irradiated living cells

International Nuclear Information System (INIS)

Fiedler, Anja; Reinert, Tilo; Tanner, Judith; Butz, Tilman

2007-01-01

DNA double strand breaks (DSBs) in living cells can be directly provoked by ionising radiation. DSBs can be visualized by immunostaining the phosphorylated histone γH2AX. Our concern was to test the feasibility of γH2AX staining for a direct visualization of single proton hits. If single protons produce detectable foci, DNA DSBs could be used as 'biological track detectors' for protons. Ionising radiation can also damage proteins indirectly by inducing free radicals. Heat shock proteins (Hsp) help to refold or even degrade the damaged proteins. The level of the most famous heat shock protein Hsp70 is increased by ionising radiation. We investigated the expression of γH2AX and Hsp70 after cross and line patterned irradiation with counted numbers of 2.25 MeV protons on primary human skin fibroblasts. The proton induced DSBs appear more delocalised than it was expected by the ion hit accuracy. Cooling the cells before the irradiation reduces the delocalisation of DNA DSBs, which is probably caused by the reduced diffusion of DNA damaging agents. Proton irradiation seems to provoke protein damages mainly in the cytoplasm indicated by cytoplasmic Hsp70 aggregates. On the contrary, in control heat shocked cells the Hsp70 was predominantly localized in the cell nucleus. However, the irradiated area could not be recognized, all cells on the Si 3 N 4 window showed a homogenous Hsp70 expression pattern

DNA double strand breaks and Hsp70 expression in proton irradiated living cells

Energy Technology Data Exchange (ETDEWEB)

Fiedler, Anja [Institute for Experimental Physics II, University of Leipzig (Germany) and Faculty of Biology, Pharmacy and Psychology, University of Leipzig (Germany)]. E-mail: afiedler@uni-leipzig.de; Reinert, Tilo [Institute for Experimental Physics II, University of Leipzig (Germany); Tanner, Judith [Clinic and Polyclinic for Radiation Oncology, University of Halle-Wittenberg (Germany); Butz, Tilman [Institute for Experimental Physics II, University of Leipzig (Germany)

2007-07-15

DNA double strand breaks (DSBs) in living cells can be directly provoked by ionising radiation. DSBs can be visualized by immunostaining the phosphorylated histone {gamma}H2AX. Our concern was to test the feasibility of {gamma}H2AX staining for a direct visualization of single proton hits. If single protons produce detectable foci, DNA DSBs could be used as 'biological track detectors' for protons. Ionising radiation can also damage proteins indirectly by inducing free radicals. Heat shock proteins (Hsp) help to refold or even degrade the damaged proteins. The level of the most famous heat shock protein Hsp70 is increased by ionising radiation. We investigated the expression of {gamma}H2AX and Hsp70 after cross and line patterned irradiation with counted numbers of 2.25 MeV protons on primary human skin fibroblasts. The proton induced DSBs appear more delocalised than it was expected by the ion hit accuracy. Cooling the cells before the irradiation reduces the delocalisation of DNA DSBs, which is probably caused by the reduced diffusion of DNA damaging agents. Proton irradiation seems to provoke protein damages mainly in the cytoplasm indicated by cytoplasmic Hsp70 aggregates. On the contrary, in control heat shocked cells the Hsp70 was predominantly localized in the cell nucleus. However, the irradiated area could not be recognized, all cells on the Si{sub 3}N{sub 4} window showed a homogenous Hsp70 expression pattern.

Whole body proton irradiation causes acute damage to bone marrow hematopoietic progenitor and stem cells in mice.

Science.gov (United States)

Chang, Jianhui; Wang, Yingying; Pathak, Rupak; Sridharan, Vijayalakshmi; Jones, Tamako; Mao, Xiao Wen; Nelson, Gregory; Boerma, Marjan; Hauer-Jensen, Martin; Zhou, Daohong; Shao, Lijian

2017-12-01

Exposure to proton irradiation during missions in deep space can lead to bone marrow injury. The acute effects of proton irradiation on hematopoietic stem and progenitor cells remain undefined and thus were investigated. We exposed male C57BL/6 mice to 0.5 and 1.0 Gy proton total body irradiation (proton-TBI, 150 MeV) and examined changes in peripheral blood cells and bone marrow (BM) progenitors and LSK cells 2 weeks after exposure. 1.0 Gy proton-TBI significantly reduced the numbers of peripheral blood cells compared to 0.5 Gy proton-TBI and unirradiated animals, while the numbers of peripheral blood cell counts were comparable between 0.5 Gy proton-TBI and unirradiated mice. The frequencies and numbers of LSK cells and CMPs in BM of 0.5 and 1.0 Gy irradiated mice were decreased in comparison to those of normal controls. LSK cells and CMPs and their progeny exhibited a radiation-induced impairment in clonogenic function. Exposure to 1.0 Gy increased cellular apoptosis but not the production of reactive oxygen species (ROS) in CMPs two weeks after irradiation. LSK cells from irradiated mice exhibited an increase in ROS production and apoptosis. Exposure to proton-TBI can induce acute damage to BM progenitors and LSK cells.

Anti-angiogenic activity in metastasis of human breast cancer cells irradiated by a proton beam

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyu-Shik; Shin, Jin-Sun; Nam, Kyung-Soo [Dongguk University, Gyeongju (Korea, Republic of); Shon, Yun-Hee [Kyungpook National University Hospital, Daegu (Korea, Republic of)

2012-07-15

Angiogenesis is an essential process of metastasis in human breast cancer. We investigated the effects of proton beam irradiation on angiogenic enzyme activities and their expressions in MCF-7 human breast cancer cells. The regulation of angiogenic regulating factors, of transforming growth factor-β (TGF-β) and of vesicular endothelial growth factor (VEGF) expression in breast cancer cells irradiated with a proton beam was studied. Aromatase activity and mRNA expression, which is correlated with metastasis, were significantly decreased by irradiation with a proton beam in a dose-dependent manner. TGF-β and VEGF transcriptions were also diminished by proton beam irradiation. In contrast, transcription of tissue inhibitors of matrix metalloproteinases (TIMPs), also known as biological inhibitors of matrix metalloproteinases (MMPs), was dose-dependently enhanced. Furthermore, an increase in the expression of TIMPs caused the MMP-9 activity to be diminished and the MMP-9 and the MMP-2 expressions to be decreased. These results suggest that inhibition of angiogenesis by proton beam irradiation in breast cancer cells is closely related to inhibitions of aromatase activity and transcription and to down-regulation of TGF-β and VEGF transcription.

Defect recovery in aluminum irradiated with protons at 20 K

DEFF Research Database (Denmark)

Linderoth, S.; Rajainmäki, H.; Nieminen, R. M.

1987-01-01

Aluminum single crystals have been irradiated with 7.0-MeV protons at 20 K. The irradiation damage and its recovery are studied with positron-lifetime spectroscopy between 20 and 500 K. Stage-I recovery is observed at 40 K. At 240 K, loss of freely migrating vacancies is observed. Hydrogen...

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Logar, B.; Baumann, H.

1997-01-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

Energy Technology Data Exchange (ETDEWEB)

Brunner, S.; Puff, W.; Logar, B. [Technische Univ., Graz (Austria). Inst. fuer Kernphysik; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Biology; Balogh, A.G. [Technische Hochschule Darmstadt (Germany); Baumann, H. [Frankfurt Univ. (Germany). Inst. fuer Kernphysik

1997-10-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab.

Persistent changes in neuronal structure and synaptic plasticity caused by proton irradiation.

Science.gov (United States)

Parihar, Vipan K; Pasha, Junaid; Tran, Katherine K; Craver, Brianna M; Acharya, Munjal M; Limoli, Charles L

2015-03-01

Cranial radiotherapy is used routinely to control the growth of primary and secondary brain tumors, but often results in serious and debilitating cognitive dysfunction. In part due to the beneficial dose depth distributions that may spare normal tissue damage, the use of protons to treat CNS and other tumor types is rapidly gaining popularity. Astronauts exposed to lower doses of protons in the space radiation environment are also at risk for developing adverse CNS complications. To explore the consequences of whole body proton irradiation, mice were subjected to 0.1 and 1 Gy and analyzed for morphometric changes in hippocampal neurons 10 and 30 days following exposure. Significant dose-dependent reductions (~33 %) in dendritic complexity were found, when dendritic length, branching and area were analyzed 30 days after exposure. At equivalent doses and times, significant reductions in the number (~30 %) and density (50-75 %) of dendritic spines along hippocampal neurons of the dentate gyrus were also observed. Immature spines (filopodia, long) exhibited the greatest sensitivity (1.5- to 3-fold) to irradiation, while more mature spines (mushroom) were more resistant to changes over a 1-month post-irradiation timeframe. Irradiated granule cell neurons spanning the subfields of the dentate gyrus showed significant and dose-responsive reductions in synaptophysin expression, while the expression of postsynaptic density protein (PSD-95) was increased significantly. These findings corroborate our past work using photon irradiation, and demonstrate for the first time, dose-responsive changes in dendritic complexity, spine density and morphology and synaptic protein levels following exposure to low-dose whole body proton irradiation.

Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

CERN Document Server

Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

1999-01-01

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Directory of Open Access Journals (Sweden)

Warner Jeffrey H.

2017-01-01

Full Text Available GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD. The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

Science.gov (United States)

Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

2014-12-01

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs1-xNx/GaAs1-xNx:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs0.991N0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs0.992N0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

Positron annihilation studies on proton irradiated nitrile rubber

International Nuclear Information System (INIS)

Ravi Chandran, T.S.G.; Lobo, Blaise; Ranganath, M.R.; Gopal, S.; Sreeramalu, V.

1996-01-01

NBR (Nitrile Butadiene Rubber) was irradiated with 4 MeV proton beam from a variable energy cyclotron (VEC) at VEC Centre, Calcutta, to a flux of 10 16 ions/cm 2 , in a vacuum of 10 -9 Torr and was studied through positron lifetime measurements

Studying the destruction of various fluoropolymers caused by gamma - irradiation and MeV protons

International Nuclear Information System (INIS)

Allayarov, S.R.; Ol'khov, Yu.A.; Gordon, D.A.; Muntele, C.I.; Muntele, I.C.; Ila, D.; Dixon, D.A.; Kispert, L.D.; Nikolskij, V.G.

2007-01-01

While fluoropolymers are normally used as anti-adherent coating, they are intensely investigated for potential use in various radiation dosimeter applications as well as space technology. In order to understand the discrepancy between high chemical and thermal stability and low radiation stability of various fluoropolymers, we are bombarding them with 1 MeV protons to fluences up to 2·10 15 protons/cm 2 as well as subjected some of them to gamma-irradiation by dose of 10 kGy. During bombardment we are monitoring the emission of chemical species with a residual gas analyzer. Gamma-irradiated samples were tested by radio thermoluminescence method. The results we present here are a good indicator that material damage happens much earlier than 2·10 15 protons/cm 2 and that further work should be addressed at much smaller exposures. Radio thermoluminescence also can be used at small doses of irradiation (10-30 kGy). The thermomechanical curve of radiation-free polyvinyledenefluoride (PVDF) is characteristic for topologically di-block amorphous polymer of quasi-crossing structure. In the temperature range of from 173 K up to 228 K polymer is vitrified. The vitrification temperature of PVDF is 228 K. All molecular-relaxation and quantitative characteristics of PVDF were determined before and after its irradiation by protons. Protons caused significant changes in PVDF. From di-block amorphous it transformed in to amorphous-crystalline structure. An appreciable influence of dose at proton irradiation of polymer was revealed both on topological level and on molecular-relaxation one. (authors)

Comparison of the microstructure, deformation and crack initiation behavior of austenitic stainless steel irradiated in-reactor or with protons

Science.gov (United States)

Stephenson, Kale J.; Was, Gary S.

2015-01-01

The objective of this study was to compare the microstructures, microchemistry, hardening, susceptibility to IASCC initiation, and deformation behavior resulting from proton or reactor irradiation. Two commercial purity and six high purity austenitic stainless steels with various solute element additions were compared. Samples of each alloy were irradiated in the BOR-60 fast reactor at 320 °C to doses between approximately 4 and 12 dpa or by a 3.2 MeV proton beam at 360 °C to a dose of 5.5 dpa. Irradiated microstructures consisted mainly of dislocation loops, which were similar in size but lower in density after proton irradiation. Both irradiation types resulted in the formation of Ni-Si rich precipitates in a high purity alloy with added Si, but several other high purity neutron irradiated alloys showed precipitation that was not observed after proton irradiation, likely due to their higher irradiation dose. Low densities of small voids were observed in several high purity proton irradiated alloys, and even lower densities in neutron irradiated alloys, implying void nucleation was in process. Elemental segregation at grain boundaries was very similar after each irradiation type. Constant extension rate tensile experiments on the alloys in simulated light water reactor environments showed excellent agreement in terms of the relative amounts of intergranular cracking, and an analysis of localized deformation after straining showed a similar response of cracking to surface step height after both irradiation types. Overall, excellent agreement was observed after proton and reactor irradiation, providing additional evidence that proton irradiation is a useful tool for accelerated testing of irradiation effects in austenitic stainless steel.

Tensile properties of several 800 MeV proton-irradiated bcc metals and alloys

International Nuclear Information System (INIS)

Brown, R.D.; Wechsler, M.S.; Tschalar, C.

1987-01-01

A spallation neutron source for the 600-MeV proton accelerator facility at the Swiss Institute for Nuclear Research (SIN) consists of a vertical cylinder filled with molten Pb-Bi. The proton beam enters the cylinder, passing upward through a window in contact with the Pb-Bi eutectic liquid that must retain reasonable strength and ductility upon irradiation at about 673 K to fluence of about 1 x 10/sup 25/ protons/m/sup 2/. Investigations are underway at the 800-MeV proton accelerator at the Los Alamos Meson Physics Facility (LAMPF) to test the performance of candidate SIN window materials under appropriate conditions of temperature, irradiation, and environment. Based on considerations of chemical compatibility with molten Pb-Bi, as well as interest in identifying fundamental radiation damage mechanisms, Fe, Ta, Fe-2.25Cr-1Mo, and Fe-12Cr-1Mo(HT-9) were chosen as candidate materials. Sheet tensile samples, 0.5-mm thick, of the four materials were fabricated and heat treated. The samples were sealed inside capsules containing Pb-Bi and were proton-irradiated at LAMPF to two fluences, 4.8 and 54 x 10/sup 23/ p/m/sup 2/. The beam current was approximately equal to the 1 mA anticipated for the upgraded SIN accelerator. The power deposited by the proton beam in the capsules was sufficient to maintain sample temperatures of about 673 K. Post-irradiation tensile tests were conducted at room temperature at a strain rate of 9 x 10/sup -4/s/sup -1/. The yield and ultimate strengths increased upon irradiation in all materials, while the ductility decreased, as indicated by the uniform strain. The pure metals, Ta and Fe, exhibited the greatest radiation hardening and embrittlement. The HT-9 alloy showed the smallest changes in strength and ductility. The increase in strength following irradiation is discussed in terms of a dispersed-barrier hardening model, for which the barrier sizes and formation cross sections are calculated

35-kV GaAs subnanosecond photoconductive switches

Science.gov (United States)

Pocha, Michael D.; Druce, Robert L.

1990-12-01

High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

Proton irradiation impacts age-driven modulations of cancer progression influenced by immune system transcriptome modifications from splenic tissue

International Nuclear Information System (INIS)

Wage, Justin; Ma, Lili; Peluso, Michael; Lamont, Clare; Hahnfeldt, Philip; Hlatky, Lynn; Beheshti, Afshin; Evens, Andrew M.

2015-01-01

Age plays a crucial role in the interplay between tumor and host, with additional impact due to irradiation. Proton irradiation of tumors induces biological modulations including inhibition of angiogenic and immune factors critical to 'hallmark' processes impacting tumor development. Proton irradiation has also provided promising results for proton therapy in cancer due to targeting advantages. Additionally, protons may contribute to the carcinogenesis risk from space travel (due to the high proportion of high-energy protons in space radiation). Through a systems biology approach, we investigated how host tissue (i.e. splenic tissue) of tumor-bearing mice was altered with age, with or without whole-body proton exposure. Transcriptome analysis was performed on splenic tissue from adolescent (68-day) versus old (736-day) C57BL/6 male mice injected with Lewis lung carcinoma cells with or without three fractionations of 0.5 Gy (1-GeV) proton irradiation. Global transcriptome analysis indicated that proton irradiation of adolescent hosts caused significant signaling changes within splenic tissues that support carcinogenesis within the mice, as compared with older subjects. Increases in cell cycling and immunosuppression in irradiated adolescent hosts with CDK2, MCM7, CD74 and RUVBL2 indicated these were the key genes involved in the regulatory changes in the host environment response (i.e. the spleen). Collectively, these results suggest that a significant biological component of proton irradiation is modulated by host age through promotion of carcinogenesis in adolescence and resistance to immunosuppression, carcinogenesis and genetic perturbation associated with advancing age. (author)

Dose-volume effects in the rat cervical spinal cord after proton irradiation

International Nuclear Information System (INIS)

Bijl, Hendrik P.; Vuijk, Peter van; Coppes, Rob P.; Schippers, Jacobus M.; Konings, Antonius W.T.; Kogel, Albert J. van der

2002-01-01

Purpose: To estimate dose-volume effects in the rat cervical spinal cord with protons. Methods and Materials: Wistar rats were irradiated on the cervical spinal cord with a single fraction of unmodulated protons (150-190 MeV) using the shoot through method, which employs the plateau of the depth-dose profile rather than the Bragg peak. Four different lengths of the spinal cord (2, 4, 8, and 20 mm) were irradiated with variable doses. The endpoint for estimating dose-volume effects was paralysis of fore or hind limbs. Results: The results obtained with a high-precision proton beam showed a marginal increase of ED 50 when decreasing the irradiated cord length from 20 mm (ED 50 = 20.4 Gy) to 8 mm (ED 50 = 24.9 Gy), but a steep increase in ED 50 when further decreasing the length to 4 mm (ED 50 = 53.7 Gy) and 2 mm (ED 50 = 87.8 Gy). These results generally confirm data obtained previously in a limited series with 4-6-MV photons, and for the first time it was possible to construct complete dose-response curves down to lengths of 2 mm. At higher ED 50 values and shorter lengths irradiated, the latent period to paralysis decreased from 125 to 60 days. Conclusions: Irradiation of variable lengths of rat cervical spinal cord with protons showed steeply increasing ED 50 values for lengths of less than 8 mm. These results suggest the presence of a critical migration distance of 2-3 mm for cells involved in regeneration processes

Comparison of gamma, neutron and proton irradiations of multimode fibers

International Nuclear Information System (INIS)

Gingerich, M.E.; Dorsey, K.L.; Askins, C.G.; Friebele, E.J.

1987-01-01

The effects of pure gamma, pure proton, and mixed neutron-gamma irradiation fields on a set of both pure and doped silica core multimode fibers have been investigated. Only slight differences are found in the radiation response of pure and doped silica core fibers exposed to gamma or mixed neutron-gamma fields, indicating that Co-60 sources can be used to simulate the effects of the mixed field (except in the case of a pure neutron environment). Although it is noted that neither mix field nor gamma sources adequately simulate the effects of proton irradiation of doped silica core fibers, a good correspondence is found in the case of the pure silica core waveguide. 13 references

Low temperature irradiation of iron, zirconium and copper by 10 to 16 MeV protons

Energy Technology Data Exchange (ETDEWEB)

Omar, A M

1978-01-01

A theoretical analysis of scattering and radiation damage parameters is carried out for 14 MeV neutrons and 10-17 MeV protons on Fe, Ni, Cu, Zr, Nb, and Au. Damage energies are computed for the interactions using both elastic and non-elastic data. The results show that proton encounters deposit a greater damage energy than 14 MeV neutrons. To examine the theoretical results, electrical resistivity measurements are undertaken for Fe, Zr and Cu irradiated at 12 to 17.5K with 10 to 16 MeV protons. Post-irradiation annealing is carried out in situ using a closed-cycle helium-cooled cryostat. Values of the resistivity damage rate are compared with values estimated from the theoretical damage-energy results. Also, the observed stage I recovery is analysed in terms of the corresponding recovery reported for electron and fast-neutron irradiations. The relation between the 16 MeV proton data and published data estimated from a fusion reactor spectrum is discussed. It is also shown that protons create a damage structure similar to a superposition of the damage structures generated by electrons and fast neutrons. The sample state of imperfection is shown to influence the induced damage state in proton irradiation.

The development for small scale soft X-ray spectrometer

International Nuclear Information System (INIS)

Sun Kexu; Jiang Shaoen; Yi Rongqing; Cui Yanli

2004-12-01

For the development of small-scale soft X-ray spectrometer, first, some small-scale soft X-ray detection elements are developed, it is included GaAs irradiated with neutron, GaAs irradiated with proton, multi-layer mirror, plane mirror and small scale X-ray diode et al. Soft X-ray spectrometers built of multi-layer mirror-GaAs (with neutron irradiation), and plane mirror-small-scale XRD, and plane mirror-GaAs (with proton irradiation) are prepared. These spectrometers are examined in Shen Guang-II laser facility, and some external estimation are given. (authors)

Studies of physiology and the morphology of the cat LGN following proton irradiation

International Nuclear Information System (INIS)

Reder, Chad S.; Moyers, Michael F.; Lau, Daryl; Kirby, Michael A.

2000-01-01

Purpose: We have examined the effects of proton irradiation on the histologic and receptive field properties of thalamic relay cells in the cat visual system. The cat lateral geniculate nucleus (LGN) is a large structure with well-defined anatomical boundaries, and well-described afferent, efferent, and receptive field properties. Methods and Materials: A 1.0-mm proton microbeam was used on the cat LGN to determine short-term (3 months) and long-term (9 months) receptive field effects of irradiation on LGN relay cells. The doses used were 16-, 40-, and 60-gray (Gy). Results: Following irradiation, abnormalities in receptive field organization were found in 40- and 60-Gy short-term animals, and in all of the long-term animals. The abnormalities included 'silent' areas of the LGN where a visual response could not be evoked and other regions that had unusually large or small compound receptive fields. Histologic analysis failed to identify cellular necrosis or vascular damage in the irradiated LGN, but revealed a disruption in retinal afferents to areas of the LGN. Conclusions: These results indicate that microbeam proton irradiation can disrupt cellular function in the absence of obvious cellular necrosis. Moreover, the area and extent of this disruption increased with time, having larger affect with longer post-irradiation periods

Effect of hydrogen on change carrier dissipation in 60Co irradiated by γ-quanta and non-alloyed n-type GaAs

International Nuclear Information System (INIS)

Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Shesholko, V.K.; Bumaj, Yu.A.

2001-01-01

The pretreatment in hydrogen plasma (the hydrogenation) influences on the charge carrier dissipation processes in the non-alloyed gallium arsenide of n-type with no = (5...7) centre dot 10 15 cm -3 and μo = (5...6) centre dot 10 13 cm 2 / (V centre dot c) irradiated by γ-quantum 60 Co was studied. The comparison of experimental dependence μ (T) with the designed one in the temperature range 77...291 K for non-hydrogenized and hydrogenized non irradiated and γ-quantum irradiated crystals was carried out. It is shown that the main dissipative mechanism that determine the charged carrier mobility in the non hydrogenized material is the dissipation on the charged centers - the radiation defects in the γ-quantum irradiated GaAs; the presence of double ionized defects is possible

Development of over-production strain of saccharification enzyme and biomass pretreatment by proton beam irradiation

International Nuclear Information System (INIS)

Kim, S. O.; Lee, J. Y.; Song, Y. S.; Shin, H. S.

2009-04-01

- The first year : Pre-treatment of biomass by proton beam irradiation and characterization of the pretreated biomass by IR and SEM - The second year : Strain development by proton beam irradiation for the production of cellulase and hemicellulase - The third year : Optimization of Saccharification process by cellulase and hemicellulase

IRRAD: The New 24GeV/c Proton Irradiation Facility at CERN

CERN Document Server

Gkotse, Blerina; Moll, Michael; Ravotti, Federico

2016-01-01

The proton and mixed-field irradiation facilities at the CERN PS East Area (known as IRRAD1 and IRRAD2), have been heavily exploited for irradiation of particle detectors, electronic components and materials since 1992. With the increasing demand of irradiation experiments, and in view of the High-Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC), these facilities suffered of a number of unpleasant restrictions such as the space availability, the maximum achievable particle flux and several access constraints. In the framework of the AIDA project, an upgrade of these facilities was carried out during the Long Shutdown 1 (LS1) of the CERN accelerator complex. The new combined East Area IRRADiation facility (EA-IRRAD) started the commissioning in October 2014. While the new proton facility (IRRAD) continue to be mainly devoted to the radiation hardness studies for the High Energy Physics community, the new mixed-field facility (CHARM) mainly hosts irradiation experiments for the validation of electr...

Internal friction measurements of Mo after low-temperature proton irradiation

International Nuclear Information System (INIS)

Tanimoto, H.; Mizubayashi, H.; Masuda, R.; Okuda, S.; Tagishi, Y.

1992-01-01

Internal friction measurements are performed in Mo after 20 MeV proton irradiation in order to clarify the behavior of self-interstitial atoms (SIA's) in Mo. In the low dose range, strong dislocation pinning suggesting the free migration of defects is observed at about 40 K and weak pinning at about 25 K. The features are very similar to those reported after neutron irradiation except that the 25 K pinning is much smaller after proton irradiation. The result suggests that the migration of free SIA's is responsible for the 40 K pinning and that of SIA-defect clusters, probably di-SIA's, formed during irradiation for the 25 K pinning. In the high dose range, the relaxation peaks are observed at about 13 and 41 K, where the close similarities are found between the present peaks and the corresponding peaks reported after neutron irradiation except that the peak height of the 41 K peak per unit concentration of Frenkel pairs (FP) tends to increase strongly with decreasing dose here. The latter fact suggests the strong interaction between SIA's. Then the smallness of the 41 K peak reported after electron irradiation with very high dose could be explained by an increased interaction between SIA's, but not by the two-dimensional migration of SIA's as proposed by Jacques and Robrock. Deformation given prior to irradiation causes a drastic decrease in the modulus defects associated with FP's (so-called bulk effect) and in the 13 K peak height. After neutron irradiation, no such effect of deformation was reported. A possible origin for this difference is discussed. (orig.)

Comparison of the microstructure, deformation and crack initiation behavior of austenitic stainless steel irradiated in-reactor or with protons

Energy Technology Data Exchange (ETDEWEB)

Stephenson, Kale J., E-mail: kalejs@umich.edu; Was, Gary S.

2015-01-15

Highlights: • Dislocation loops were the prominent defect, but neutron irradiation caused higher loop density. • Grain boundaries had similar amounts of radiation-induced segregation. • The increment in hardness and yield stress due to irradiation were very similar. • Relative IASCC susceptibility was nearly identical. • The effect of dislocation channel step height on IASCC was similar. - Abstract: The objective of this study was to compare the microstructures, microchemistry, hardening, susceptibility to IASCC initiation, and deformation behavior resulting from proton or reactor irradiation. Two commercial purity and six high purity austenitic stainless steels with various solute element additions were compared. Samples of each alloy were irradiated in the BOR-60 fast reactor at 320 °C to doses between approximately 4 and 12 dpa or by a 3.2 MeV proton beam at 360 °C to a dose of 5.5 dpa. Irradiated microstructures consisted mainly of dislocation loops, which were similar in size but lower in density after proton irradiation. Both irradiation types resulted in the formation of Ni–Si rich precipitates in a high purity alloy with added Si, but several other high purity neutron irradiated alloys showed precipitation that was not observed after proton irradiation, likely due to their higher irradiation dose. Low densities of small voids were observed in several high purity proton irradiated alloys, and even lower densities in neutron irradiated alloys, implying void nucleation was in process. Elemental segregation at grain boundaries was very similar after each irradiation type. Constant extension rate tensile experiments on the alloys in simulated light water reactor environments showed excellent agreement in terms of the relative amounts of intergranular cracking, and an analysis of localized deformation after straining showed a similar response of cracking to surface step height after both irradiation types. Overall, excellent agreement was observed

Development of abiotic-stress resistant warm season trufgrasses by proton-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Seo, Y. W.; Kim, J. Y.; Jeong, S. H. [Korea Univ., Seoul (Korea, Republic of)

2007-04-15

The direct use of mutation is a valuable approach to generate genetic variation in crop species by altering agronomically useful major traits. The proton beam, as a mutagen, was applied to improve resistance traits of Zoysia grass under various abiotic stresses. Proton beam was irradiated to mature dry seeds of Zenith (Zoysia grass), which is well-adapted to Korean climate, using a proton- accelerator with seven different doses (50, 100, 150, 200, 250, 300, 400 Gy). Individual seedling of M1 plant was transplanted from the seed bed and allowed to reach appropriate plant mass. Clones that showed superior growth were chosen and transplanted to pots for further clone propagation and field evaluation. Growth characteristics of turfgrass, such as plant height, leaf length, leaf width, number of tiller were evaluated ninety days after sowing. Although large variation within each dose, noticeable differences were found among different irradiated doses. Most of the mutant clones derived from the irradiation treatment showed more vigorous growth than the control plants. RAPD (Random Amplified Polymorphic DNA) and AFLP (Amplified Fragment Length Polymorphism) methods were conducted to analyze genomic variations associated with proton beam irradiation. In order to establish selection criteria for selection of salt-stress resistance plants, an in vitro method that is able to select salt-stress resistant mutants in liquid media without ambient disturbances. Total 647 predominance clones that were considered as abiotic stress resistant mutants were transplanted to the field for further evaluation.

Radiation damages and electro-conductive characteristics of Neutron-Transmutation-Doped GaAs

Energy Technology Data Exchange (ETDEWEB)

Kuriyama, Kazuo; Sato, Masataka; Sakai, Kiyohiro [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering; Okada, Moritami

1996-04-01

Neutron Transmutation Doping (NTD) method made it possible to do homogeneous doping of impurities and to easily control the doping level. Thus, the method has been put into practice for some materials such as silicon. Here, the annealing behavior of anti-site defects generated in neutron-irradiated GaAs was studied. Electric activations of NTD-impurities were started around 550degC in P1 and P2 radiation fields, which were coincident with the beginning of extinction of electron trapping which was caused by anti-site defects due to fast neutron radiation. The electric resistivities of GaAs in neutron radiation fields; P1, P2 and P3 changed depending with the annealing temperature. The electric resistivities of GaAs in P1 and P2 fields indicate the presence of hopping conduction through radiation damages. The resistance of GaAs irradiated in P1 was smaller by nearly 2 orders than that of the untreated control. Further, the electric activation process for NTD-impurities was investigated using ESR and Raman spectroscopy. (M.N.)

Performance of a proton irradiation chamber

International Nuclear Information System (INIS)

Agosteo, S.; Borsato, E.; Dal Corso, F.; Fazzi, A.; Gonella, F.; Introini, M.V.; Lippi, I.; Lorenzoli, M.; Modenese, L.; Montecassiano, F.; Pegoraro, M.; Pola, A.; Varoli, V.; Zotto, P.

2012-01-01

A Proton Irradiation Chamber aiming to perform radiation tests of electronic components was developed. The precision on the measurement of the ion currents was pushed beyond the resolution of the picoammeter by means of a series of collimators on the beam showing a linear correlation among the currents measured on them and the smaller, not measurable, current on the target. As an example of the obtained results the tests done on a Si microdosimeter and a power p-MOS are reported.

Performance of a proton irradiation chamber

Energy Technology Data Exchange (ETDEWEB)

Agosteo, S. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Borsato, E. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Universita di Padova, Dipartimento di Fisica, via Marzolo 8, 35131 Padova (Italy); Dal Corso, F. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Fazzi, A. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Gonella, F. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Introini, M.V. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Lippi, I. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Lorenzoli, M. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Modenese, L.; Montecassiano, F.; Pegoraro, M. [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Pola, A.; Varoli, V. [INFN, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare-CeSNEF, via Ponzio 34/3 20133 Milano (Italy); Zotto, P., E-mail: pierluigi.zotto@pd.infn.it [INFN, Sezione di Padova, via Marzolo 8, 35131 Padova (Italy); Universita di Padova, Dipartimento di Fisica, via Marzolo 8, 35131 Padova (Italy)

2012-02-01

A Proton Irradiation Chamber aiming to perform radiation tests of electronic components was developed. The precision on the measurement of the ion currents was pushed beyond the resolution of the picoammeter by means of a series of collimators on the beam showing a linear correlation among the currents measured on them and the smaller, not measurable, current on the target. As an example of the obtained results the tests done on a Si microdosimeter and a power p-MOS are reported.

High-energy and high-fluence proton irradiation effects in silicon solar cells

International Nuclear Information System (INIS)

Yamaguchi, M.; Taylor, S.J.; Yang, M.; Matsuda, S.; Kawasaki, O.; Hisamatsu, T.

1996-01-01

We have examined proton irradiation damage in high-energy (1 endash 10 MeV) and high-fluence (approx-gt 10 13 cm -2 ) Si n + -p-p + structure space solar cells. Radiation testing has revealed an anomalous increase in short-circuit current I sc followed by an abrupt decrease and cell failure, induced by high-fluence proton irradiation. We propose a model to explain these phenomena by expressing the change in carrier concentration p of the base region as a function of the proton fluence in addition to the well-known model where the short-circuit current is decreased by minority-carrier lifetime reduction after irradiation. The reduction in carrier concentration due to majority-carrier trapping by radiation-induced defects has two effects. First, broadening of the depletion layer increases both the generation endash recombination current and also the contribution of the photocurrent generated in this region to the total photocurrent. Second, the resistivity of the base layer is increased, resulting in the abrupt decrease in the short circuit current and failure of the solar cells. copyright 1996 American Institute of Physics

Response of thyroid follicular cells to gamma irradiation compared to proton irradiation. I. Initial characterization of DNA damage, micronucleus formation, apoptosis, cell survival, and cell cycle phase redistribution

Science.gov (United States)

Green, L. M.; Murray, D. K.; Bant, A. M.; Kazarians, G.; Moyers, M. F.; Nelson, G. A.; Tran, D. T.

2001-01-01

The RBE of protons has been assumed to be equivalent to that of photons. The objective of this study was to determine whether radiation-induced DNA and chromosome damage, apoptosis, cell killing and cell cycling in organized epithelial cells was influenced by radiation quality. Thyroid-stimulating hormone-dependent Fischer rat thyroid cells, established as follicles, were exposed to gamma rays or proton beams delivered acutely over a range of physical doses. Gamma-irradiated cells were able to repair DNA damage relatively rapidly so that by 1 h postirradiation they had approximately 20% fewer exposed 3' ends than their counterparts that had been irradiated with proton beams. The persistence of free ends of DNA in the samples irradiated with the proton beam implies that either more initial breaks or a quantitatively different type of damage had occurred. These results were further supported by an increased frequency of chromosomal damage as measured by the presence of micronuclei. Proton-beam irradiation induced micronuclei at a rate of 2.4% per gray, which at 12 Gy translated to 40% more micronuclei than in comparable gamma-irradiated cultures. The higher rate of micronucleus formation and the presence of larger micronuclei in proton-irradiated cells was further evidence that a qualitatively more severe class of damage had been induced than was induced by gamma rays. Differences in the type of damage produced were detected in the apoptosis assay, wherein a significant lag in the induction of apoptosis occurred after gamma irradiation that did not occur with protons. The more immediate expression of apoptotic cells in the cultures irradiated with the proton beam suggests that the damage inflicted was more severe. Alternatively, the cell cycle checkpoint mechanisms required for recovery from such damage might not have been invoked. Differences based on radiation quality were also evident in the alpha components of cell survival curves (0.05 Gy(-1) for gamma rays, 0

Observations of defect structure evolution in proton and Ni ion irradiated Ni-Cr binary alloys

Energy Technology Data Exchange (ETDEWEB)

Briggs, Samuel A., E-mail: sabriggs2@wisc.edu [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Barr, Christopher M. [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Pakarinen, Janne [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); SKC-CEN Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Mamivand, Mahmood [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Hattar, Khalid [Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185 (United States); Morgan, Dane D. [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Taheri, Mitra [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Sridharan, Kumar [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States)

2016-10-15

Two binary Ni-Cr model alloys with 5 wt% Cr and 18 wt% Cr were irradiated using 2 MeV protons at 400 and 500 °C and 20 MeV Ni{sup 4+} ions at 500 °C to investigate microstructural evolution as a function of composition, irradiation temperature, and irradiating ion species. Transmission electron microscopy (TEM) was applied to study irradiation-induced void and faulted Frank loops microstructures. Irradiations at 500 °C were shown to generate decreased densities of larger defects, likely due to increased barriers to defect nucleation as compared to 400 °C irradiations. Heavy ion irradiation resulted in a larger density of smaller voids when compared to proton irradiations, indicating in-cascade clustering of point defects. Cluster dynamics simulations were in good agreement with the experimental findings, suggesting that increases in Cr content lead to an increase in interstitial binding energy, leading to higher densities of smaller dislocation loops in the Ni-18Cr alloy as compared to the Ni-5Cr alloy. - Highlights: • Binary Ni-Cr alloys were irradiated with protons or Ni ions at 400 and 500 °C. • Higher irradiation temperatures yield increased size, decreased density of defects. • Hypothesize that varying Cr content affects interstitial binding energy. • Fitting CD models for loop nucleation to data supports this hypothesis.

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Proteomic analysis of proton beam irradiated human melanoma cells.

Directory of Open Access Journals (Sweden)

Sylwia Kedracka-Krok

Full Text Available Proton beam irradiation is a form of advanced radiotherapy providing superior distributions of a low LET radiation dose relative to that of photon therapy for the treatment of cancer. Even though this clinical treatment has been developing for several decades, the proton radiobiology critical to the optimization of proton radiotherapy is far from being understood. Proteomic changes were analyzed in human melanoma cells treated with a sublethal dose (3 Gy of proton beam irradiation. The results were compared with untreated cells. Two-dimensional electrophoresis was performed with mass spectrometry to identify the proteins. At the dose of 3 Gy a minimal slowdown in proliferation rate was seen, as well as some DNA damage. After allowing time for damage repair, the proteomic analysis was performed. In total 17 protein levels were found to significantly (more than 1.5 times change: 4 downregulated and 13 upregulated. Functionally, they represent four categories: (i DNA repair and RNA regulation (VCP, MVP, STRAP, FAB-2, Lamine A/C, GAPDH, (ii cell survival and stress response (STRAP, MCM7, Annexin 7, MVP, Caprin-1, PDCD6, VCP, HSP70, (iii cell metabolism (TIM, GAPDH, VCP, and (iv cytoskeleton and motility (Moesin, Actinin 4, FAB-2, Vimentin, Annexin 7, Lamine A/C, Lamine B. A substantial decrease (2.3 x was seen in the level of vimentin, a marker of epithelial to mesenchymal transition and the metastatic properties of melanoma.

Proton and photon absorbed-dose conversion coefficients for embryo and foetus from top-down irradiation geometry

International Nuclear Information System (INIS)

Chen, J.

2007-01-01

Absorbed-dose conversion coefficients are calculated for the embryo of 8 weeks and the foetus of 3, 6 or 9 months when the mother's body is exposed to protons and photons from top-down (TOP) direction. It provides data sets in addition to other standard irradiation geometries published previously. The TOP-irradiation geometry is considered here, because high-energy particles are often peaked from the TOP direction onboard aircraft. The results show that absorbed-doses from high-energy particles could be underestimated significantly if isotropic (ISO) irradiation geometry is assumed. For protons of 100 GeV, absorbed-doses from TOP irradiation are ∼2.3-2.9 times higher than the doses from ISO irradiation for different foetal ages. For 10 GeV photons, foetal doses from TOP irradiation are ∼6.8-12 times higher than the doses from ISO irradiation. The coefficients from TOP-irradiation geometry are given in wide energy ranges, from 100 MeV to 100 GeV for protons and from 50 V to 10 GeV for photons. They can, therefore, be used in various applications whenever exposure from the TOP-irradiation direction is concerned. (authors)

Evolving role of hadron irradiation: Potential and risks of hadrons heavier than protons

International Nuclear Information System (INIS)

Levy, Richard P.

2007-01-01

Proton irradiation has been developed to achieve the clinical benefit of improved 3D-dose distribution, with biological properties similar to X-rays. Neutron irradiation, though much less 3D-conformal than proton treatment, has been developed to take advantage of increased relative biologic effectiveness (RBE). Irradiation with hadrons heavier than protons (e.g. carbon and neon ions) exhibits the unique combination of improved 3D-dose distribution and increased RBE. The synchrotron technology is rapidly developing to improve the efficiency of delivering these heavier hadrons clinically, but important issues remain regarding optimization of dose and fractionation parameters in the treatment of various histopathologies located in different portions of the anatomy. Many laboratory animal and in vitro cellular studies, and some clinical studies, have been performed to enable better understanding of how to adjust dose-fractionation selection to improve the therapeutic ratio of tumor-cell kill to normal-tissue injury. This paper highlights the enhanced therapeutic potential and associated risks of treatment with these heavier hadrons

A simple irradiation facility for radiobiological experiments with low energy protons from a cyclotron

International Nuclear Information System (INIS)

Mukherjee, B.

1982-01-01

An experimental facility for irradiation of small biological targets with low-energy protons has been developed. The depth-dose distribution in soft-tissue is calculated from the proton energy spectrum. (orig.)

Proton microbeam irradiation effects on PtBA polymer

Indian Academy of Sciences (India)

Microbeam irradiation effects on poly-tert-butyl-acrylate (PtBA) polymer using 2.0 MeV proton microbeam are reported. Preliminary results on pattern formation on PtBA are carried out as a function of fluence. After writing the pattern, a thin layer of Ge is deposited. Distribution of Ge in pristine and ion beam patterned surface ...

X-ray diffraction studies of 145MeV proton-irradiated AlBeMet 162

Directory of Open Access Journals (Sweden)

Mohamed Elbakhshwan

2016-08-01

Full Text Available AlBeMet 162 (Materion Co., formerly Brush Wellman has been irradiated with 145MeV protons up to 1.2×1020cm−2 fluence, with irradiation temperatures in the range of 100–220°C. Macroscopic post-irradiation evaluation on the evolution of mechanical and thermal properties was integrated with a comprehensive X-ray- diffraction study using high-energy monochromatic and polychromatic X-ray beams, which offered a microscopic view of the irradiation damage effects on AlBeMet. The study confirmed the stability of the metal–matrix composite, its resistance to proton damage, and the continuing separation of the two distinct phases, fcc aluminum and hcp beryllium, following irradiation. Furthermore, based on the absence of inter-planar distance change during proton irradiation, it was confirmed that the stacking faults and clusters on the Al (111 planes are stable, and thus can migrate from the cascade region and be absorbed at various sinks. XRD analysis of the unirradiated AlBeMet 162 showed clear change in the texture of the fcc phase with orientation especially in the Al (111 reflection which exhibits a “non-perfect” six-fold symmetry, implying lack of isotropy in the composite.

MO-FG-CAMPUS-JeP1-03: Luminescence Imaging of Water During Proton Beam Irradiation for Range Estimation

International Nuclear Information System (INIS)

Yamamoto, S; Komori, M; Toshito, T; Watabe, H

2016-01-01

Purpose: Since proton therapy has the ability to selectively deliver a dose to a target tumor, the dose distribution should be accurately measured. A precise and efficient method to evaluate the dose distribution is desired. We found that luminescence was emitted from water during proton irradiation and thought this phenomenon could be used for estimating the dose distribution. Methods: For this purpose, we placed water phantoms set on a table with a spot-scanning proton-therapy system, and luminescence images of these phantoms were measured with a high-sensitivity cooled charge coupled device (CCD) camera during proton-beam irradiation. We also conducted the imaging of phantoms of pure-water, fluorescein solution and acrylic block. We made three dimensional images from the projection data. Results: The luminescence images of water phantoms during the proton-beam irradiations showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. The image of the pure-water phantom also showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had 14.5% shorter proton range than that of water; the proton range in the acrylic phantom was relatively matched with the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 sec. Three dimensional images were successfully obtained which have more quantitative information. Conclusion: Luminescence imaging during proton-beam irradiation has the potential to be a new method for range estimations in proton therapy.

MO-FG-CAMPUS-JeP1-03: Luminescence Imaging of Water During Proton Beam Irradiation for Range Estimation

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, S; Komori, M [Nagoya University, Nagoya, Aichi (Japan); Toshito, T [Nagoya Proton Therapy Center, Nagoya, Aichi (Japan); Watabe, H [Tohoku University, Sendai, Miyagi (Japan)

2016-06-15

Purpose: Since proton therapy has the ability to selectively deliver a dose to a target tumor, the dose distribution should be accurately measured. A precise and efficient method to evaluate the dose distribution is desired. We found that luminescence was emitted from water during proton irradiation and thought this phenomenon could be used for estimating the dose distribution. Methods: For this purpose, we placed water phantoms set on a table with a spot-scanning proton-therapy system, and luminescence images of these phantoms were measured with a high-sensitivity cooled charge coupled device (CCD) camera during proton-beam irradiation. We also conducted the imaging of phantoms of pure-water, fluorescein solution and acrylic block. We made three dimensional images from the projection data. Results: The luminescence images of water phantoms during the proton-beam irradiations showed clear Bragg peaks, and the measured proton ranges from the images were almost the same as those obtained with an ionization chamber. The image of the pure-water phantom also showed almost the same distribution as the tap-water phantom, indicating that the luminescence image was not related to impurities in the water. The luminescence image of fluorescein solution had ∼3 times higher intensity than water, with the same proton range as that of water. The luminescence image of the acrylic phantom had 14.5% shorter proton range than that of water; the proton range in the acrylic phantom was relatively matched with the calculated value. The luminescence images of the tap-water phantom during proton irradiation could be obtained in less than 2 sec. Three dimensional images were successfully obtained which have more quantitative information. Conclusion: Luminescence imaging during proton-beam irradiation has the potential to be a new method for range estimations in proton therapy.

Damage effects and mechanisms of proton irradiation on methyl silicone rubber

International Nuclear Information System (INIS)

Zhang, L.X.; He, Sh.Y.; Xu, Zh.; Wei, Q.

2004-01-01

A study was performed on the damage effects and mechanisms of proton irradiation with 150 keV energy to space-grade methyl silicone rubber. The changes in surface morphology, mechanical properties, infrared attenuated total reflection (ATR) spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum (PYGC-MS) indicated that, under lower fluence, the proton radiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, under higher proton fluence, the radiation-induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular-network destruction model for the silicone rubber radiated with the protons was proposed

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Science.gov (United States)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

International Nuclear Information System (INIS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1999-01-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10 15 p/cm 2 . We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10 15 p/cm 2 and decreases by ∼40% at 5x10 15 p/cm 2 . Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10 15 p/cm 2 without signal loss

Supine craniospinal irradiation in pediatric patients by proton pencil beam scanning.

Science.gov (United States)

Farace, Paolo; Bizzocchi, Nicola; Righetto, Roberto; Fellin, Francesco; Fracchiolla, Francesco; Lorentini, Stefano; Widesott, Lamberto; Algranati, Carlo; Rombi, Barbara; Vennarini, Sabina; Amichetti, Maurizio; Schwarz, Marco

2017-04-01

Proton therapy is the emerging treatment modality for craniospinal irradiation (CSI) in pediatric patients. Herein, special methods adopted for CSI at proton Therapy Center of Trento by pencil beam scanning (PBS) are comprehensively described. Twelve pediatric patients were treated by proton PBS using two/three isocenters. Special methods refer to: (i) patient positioning in supine position on immobilization devices crossed by the beams; (ii) planning field-junctions via the ancillary-beam technique; (iii) achieving lens-sparing by three-beams whole-brain-irradiation; (iv) applying a movable-snout and beam-splitting technique to reduce the lateral penumbra. Patient-specific quality assurance (QA) program was performed using two-dimensional ion chamber array and γ-analysis. Daily kilovoltage alignment was performed. PBS allowed to obtain optimal target coverage (mean D98%>98%) with reduced dose to organs-at-risk. Lens sparing was obtained (mean D1∼730cGyE). Reducing lateral penumbra decreased the dose to the kidneys (mean Dmean4cm (mean γ>95%) than at depths<4cm. The reported methods allowed to effectively perform proton PBS CSI. Copyright © 2017 Elsevier B.V. All rights reserved.

High total dose proton irradiation effects on silicon NPN rf power transistors

International Nuclear Information System (INIS)

Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana; Pushpa, N.

2014-01-01

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods

High total dose proton irradiation effects on silicon NPN rf power transistors

Energy Technology Data Exchange (ETDEWEB)

Bharathi, M. N.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025, Karnataka (India)

2014-04-24

The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

Irradiation effects of 11 MeV protons on ferritic steels

International Nuclear Information System (INIS)

Hamaguchi, Yoshikazu; Kuwano, Hisashi; Misawa, Toshihei

1985-01-01

It is considered that ferritic/martensitic steels are the candidate of the first wall materials for future fusion reactors. The most serious problem in the candidate materials is the loss of ductility due to the elevation of ductile-brittle transition temperature by the high dpa irradiation of neutrons. 14 MeV neutrons produced by D-T reaction cause high dpa damage and also produce large quantity of helium and hydrogen atoms in first wall materials. Those gas atoms also play an important role in the embrittlement of steels. The main purpose of this work was to simulate the behavior of hydrogen produced by the transmutation in the mechanical properties of ferritic steels when they were irradiated with 11 MeV protons. The experimental procedure and the results of hardness, the broadening of x-ray diffraction lines, Moessbauer spectroscopy and small punch test are reported. High energy protons of 10 - 20 MeV are suitable to the simulation experiment of 14 MeV neutron radiation damage. But the production of the active nuclei emitting high energy gamma ray and having long life, Co-56, is the most serious problem. Another difficulty is the control of irradiation temperature. A small irradiation chamber must be developed. (Kako, I.)

Proton irradiation studies on Al and Al5083 alloy

Science.gov (United States)

Bhattacharyya, P.; Gayathri, N.; Bhattacharya, M.; Gupta, A. Dutta; Sarkar, Apu; Dhar, S.; Mitra, M. K.; Mukherjee, P.

2017-10-01

The change in the microstructural parameters and microhardness values in 6.5 MeV proton irradiated pure Al and Al5083 alloy samples have been evaluated using different model based techniques of X-ray diffraction Line Profile Analysis (XRD) and microindendation techniques. The detailed line profile analysis of the XRD data showed that the domain size increases and saturates with irradiation dose both in the case of Al and Al5083 alloy. The corresponding microstrain values did not show any change with irradiation dose in the case of the pure Al but showed an increase at higher irradiation doses in the case of Al5083 alloy. The microindendation results showed that unirradiated Al5083 alloy has higher hardness value compared to that of unirradiated pure Al. The hardness increased marginally with irradiation dose in the case of Al5083, whereas for pure Al, there was no significant change with dose.

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

International Nuclear Information System (INIS)

Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

2005-01-01

A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

Selective Adsorption of Nano-bio materials and nanostructure fabrication on Molecular Resists Modified by proton beam irradiation

International Nuclear Information System (INIS)

Lee, H. W.; Kim, H. S.; Kim, S. M.

2008-04-01

The purpose of this research is the fabrication of nanostructures on silicon substrate using proton beam and selectively adsorption of bio-nano materials on the patterned substrate. Recently, the miniaturization of the integrated devices with fine functional structures was intensively investigated, based on combination of nanotechnology (NT), biotechnology (BT) and information technology (IT). Because of the inherent limitation in optical lithography, large variety of novel patterning technologies were evolved to construct nano-structures onto a substrate. Atomic force microscope-based nanolithography has readily formed sub-50 nm patterns by the local modification of a substrate using a probe with a curvature of 10 nm. The surface property was regarded as one of the most important factors for AFM-based nanolithography as well as for other novel nanolithographies. The molecular thin films such as a self-assembled monolayer or a polymer resist layer have been used as an alternative to modifying the surface property. Although proton or ion beam irradiation has been used as an efficient tool to modify the physical, chemical and electrical properties of a surface, the nano-patterning on the substrate or the molecular film modified with the beam irradiation has hardly been studied at both home and abroad. The selective adsorption of nano-bio materials such as carbon nanotubes and proteins on the patterns would contribute to developing the integrated devices. The polystyrene nanoparticles (400 nm) were arrayed on al silicon surface using nanosphere lithography and the various nanopatterns were fabricated by proton beam irradiation on the polystyrene nanoparticles arrayed silicon surface. We obtained the two different nanopatterns such as polymer nanoring patterns and silicon oxide patterns on the same silicon substrate. The polymer nanoring patterns formed by the crosslinkage of polystyrene when proton beam was irradiated at the triangular void spaces that are enclosed by

Effects of proton beam irradiation on seed germination and growth of soybean ( Glycine max L. Merr.)

Science.gov (United States)

Im, Juhyun; Kim, Woon Ji; Kim, Sang Hun; Ha, Bo-Keun

2017-12-01

The present study aimed to evaluate the morphological effects of proton beam irradiation on the seed germination, seedling survival, and plant growth of soybean. Seeds of three Korean elite cultivars (Kwangankong, Daepungkong, and Pungsannamulkong) were irradiated with a 57-MeV proton beam in the range of 50 - 400 Gy. The germination rates of all the varieties increased to > 95%; however, the survival rates were significantly reduced. At doses of > 300 Gy irradiation, the Daepungkong, Kwangankong, and Pungsannamulkong cultivars exhibited 39, 75, and 71% survival rates, respectively. In addition, plant height and the fresh weight of shoots and roots were significantly decreased by doses of > 100 Gy irradiation, as were the dry weights of the shoots and roots. However, SPAD values increased with increasing doses of irradiation. Abnormal plants with atypically branched stems, modified leaves, and chlorophyll mutations were observed. Based on the survival rate, plant growth inhibition, and mutation frequency, it appears that the optimum dosage of proton beam irradiation for soybean mutation breeding is between 250 and 300 Gy.

Research on the radiation exposure “memory effects” in AlGaAs heterostructures

International Nuclear Information System (INIS)

Gradoboev, A V; Sednev, V V

2015-01-01

Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the “memory effect” that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the “memory effect” that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the “memory effect” occurrence are under review. (paper)

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

CERN Document Server

Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G

1999-01-01

Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N.J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2006-01-01

For the first time, by deep-level transient spectroscopy, 30keV proton irradiation-induced defects in n + /p-AlInGaP solar cells have been observed. After the 30keV proton irradiation, new deep-level defects such as two majority-carrier (hole) traps HP1 (E V +0.98eV, N T =3.8x10 14 cm -3 ) and HP2, and two minority-carrier (electron) traps EP1 (E C -0.71eV, N T =2.0x10 15 cm -3 ) and EP2 have been observed in p-AlInGaP. The introduction rate of majority-carrier trap center (HP1) is 380cm -1 , which is lower than that (1500cm -1 ) in 100keV proton-irradiated p-InGaP. From the minority-carrier injection annealing for HP1 defect and carrier concentration in 30keV proton-irradiated p-AlInGaP, HP1 defect is likely to act as a recombination center as well as a compensator center

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

Science.gov (United States)

Piccinini, M.; Ambrosini, F.; Ampollini, A.; Bonfigli, F.; Libera, S.; Picardi, L.; Ronsivalle, C.; Vincenti, M. A.; Montereali, R. M.

2015-04-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 1011-1015 protons/cm2. The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F2 and F3+ photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences.

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Radiation defects and electron disordering in proton-irradiated diamond films

International Nuclear Information System (INIS)

Maschenko, V.E.; Soloviev, G.G.

1991-01-01

The absorption spectra are studied in the region of the fundamental absorption band and its longwave boundary for the 0.6 μm thick diamond films deposited onto Al 2 O 3 single crystal underlayers and irradiated by 100 keV and 50 keV protons at fluences of 10 13 -10 16 cm -2 . The E 0 β (6.10-5.9eV) and E 0 α (5.51-5.43eV) maxima and the exponential tails towards lower energies are resolved in the spectra of initial films. The halfwidths of the maxima and a weak temperature dependence of their parameters and of the Urbach tail slope are indicative of disordering of the film structure. The intrinsic maxima near and above the indirect absorption boundary in diamond Γ 25 '-Δ are identified with transitions in the disordered cubic and hexagonal phases of the diamond films. The proton irradiation stimulates the intensity redistribution of the intrinsic maxima, the absorption enhancement, and the change of the Urbach tail slope. The character of radiolysis has been found to depend on the composition of the nonirradiated carbon films and on proton fluence. (author). 8 refs.; 3 figs

Radiosensitizing effect of nitric oxide in tumor cells and experimental tumors irradiated with gamma rays and proton beams

International Nuclear Information System (INIS)

Policastro, Lucia L.; Duran, Hebe; Molinari, Beatriz L.; Somacal, Hector R.; Valda, Alejandro A.

2003-01-01

Nitric oxide (NO) has been reported to be a radiosensitizer of mammalian cells under hypoxic conditions. In a previous study, we demonstrated an enhancement in radiation response induced by NO in mouse tumor cells under aerobic conditions, with an increasing effect as a function of malignancy. The aim of the present study was to evaluate the effect of NO in tumor cells and in experimental tumors irradiated with γ rays and proton beams. Irradiations were performed with a 137 Cs γ source and with proton beams generated by the TANDAR accelerator. Tumor cells were treated with the NO donor DETA-NO and the sensitizer enhancement ratio (SER) was calculated using the α parameter of the survival curve fitted to the linear-quadratic model. Tumor cells irradiated with protons were radio sensitized by DETA-NO only in the more malignant cells irradiated with low LET protons (2.69±0.08 keV/μm). For higher LET protons there were no radiosensitizing effect. For human tumor cells pre-treated with DETA-NO and irradiated with γ rays, a significantly greater effect was demonstrated in the malignant cells (MCF-7) as compared with the near normal cells (HBL-100). Moreover, a significant decrease in tumor growth was demonstrated in mice pre-treated with the NO donor spermine and irradiated with γ rays and low LET protons as compared with mice irradiated without pre-treatment with the NO donor. In conclusion, we demonstrated a differential effect of NO as a radiosensitizer of malignant cells, both with γ rays and low LET protons. This selectivity, coupled to the in vivo inhibition of tumor growth, is of great interest for the potential use of NO releasing agents in radiotherapy. (author)

Measurement and calculation of characteristic prompt gamma ray spectra emitted during proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Polf, J C; Peterson, S; Beddar, S [M D Anderson Cancer Center, Univeristy of Texas, Houston, TX 77030 (United States); McCleskey, M; Roeder, B T; Spiridon, A; Trache, L [Cyclotron Institute, Texas A and M University, College Station, TX 77843 (United States)], E-mail: jcpolf@mdanderson.org

2009-11-21

In this paper, we present results of initial measurements and calculations of prompt gamma ray spectra (produced by proton-nucleus interactions) emitted from tissue equivalent phantoms during irradiations with proton beams. Measurements of prompt gamma ray spectra were made using a high-purity germanium detector shielded either with lead (passive shielding), or a Compton suppression system (active shielding). Calculations of the spectra were performed using a model of both the passive and active shielding experimental setups developed using the Geant4 Monte Carlo toolkit. From the measured spectra it was shown that it is possible to distinguish the characteristic emission lines from the major elemental constituent atoms (C, O, Ca) in the irradiated phantoms during delivery of proton doses similar to those delivered during patient treatment. Also, the Monte Carlo spectra were found to be in very good agreement with the measured spectra providing an initial validation of our model for use in further studies of prompt gamma ray emission during proton therapy. (note)

CH4/H2/Ar electron cyclotron resonance plasma etching for GaAs-based field effect transistors

NARCIS (Netherlands)

Hassel, van J.G.; Es, van C.M.; Nouwens, P.A.M.; Maahury, J.H.; Kaufmann, L.M.F.

1995-01-01

Electron cyclotron resonance (ECR) plasma etch processes with CH4/H2/AR have been investigated on different III–Vsemiconductor materials (GaAs, AlGaAs, InGaAs, and InP). The passivation depth as a function of the GaAs carrierconcentration and the recovery upon annealing at different temperatures

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Energy Technology Data Exchange (ETDEWEB)

Meier, D. E-mail: dirk.meier@cern.ch.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-04-21

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10{sup 15} p/cm{sup 2}. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10{sup 15} p/cm{sup 2} and decreases by {approx}40% at 5x10{sup 15} p/cm{sup 2}. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10{sup 15}p/cm{sup 2} without signal loss.

High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

Energy Technology Data Exchange (ETDEWEB)

Simos, Nikolaos, E-mail: simos@bnl.gov [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Savkliyildiz, Ilyas [Rutgers University (United States)

2016-08-15

S−200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 10{sup 20} cm{sup −2} peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation {sup 4}He and {sup 3}H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

Differential absorption lidar measurements of atmospheric water vapor using a pseudonoise code modulated AlGaAs laser. Thesis

Science.gov (United States)

Rall, Jonathan A. R.

1994-01-01

Lidar measurements using pseudonoise code modulated AlGaAs lasers are reported. Horizontal path lidar measurements were made at night to terrestrial targets at ranges of 5 and 13 km with 35 mW of average power and integration times of one second. Cloud and aerosol lidar measurements were made to thin cirrus clouds at 13 km altitude with Rayleigh (molecular) backscatter evident up to 9 km. Average transmitter power was 35 mW and measurement integration time was 20 minutes. An AlGaAs laser was used to characterize spectral properties of water vapor absorption lines at 811.617, 816.024, and 815.769 nm in a multipass absorption cell using derivative spectroscopy techniques. Frequency locking of an AlGaAs laser to a water vapor absorption line was achieved with a laser center frequency stability measured to better than one-fifth of the water vapor Doppler linewidth over several minutes. Differential absorption lidar measurements of atmospheric water vapor were made in both integrated path and range-resolved modes using an externally modulated AlGaAs laser. Mean water vapor number density was estimated from both integrated path and range-resolved DIAL measurements and agreed with measured humidity values to within 6.5 percent and 20 percent, respectively. Error sources were identified and their effects on estimates of water vapor number density calculated.

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

International Nuclear Information System (INIS)

Piccinini, M; Ambrosini, F; Ampollini, A; Bonfigli, F; Libera, S; Picardi, L; Ronsivalle, C; Vincenti, M A; Montereali, R M

2015-01-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 10 11 -10 15 protons/cm 2 . The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F 2 and F 3 + photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences. (paper)

Effectiveness of proton-beam irradiation of the pituitary gland in children with Itsenko-Cushing disease

International Nuclear Information System (INIS)

Zhukovskij, M.A.; Bukhman, A.I.; Levshina, R.B.; Kirpatovskaya, L.E.; Kolesnikova, G.S.; Pankova, S.S.; Lisovets, S.P.; Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Moscow

1990-01-01

The results of the treatment of 20 children with Icenko-Cushing disease (ICD) by proton-beam irradiation of the pituitary glandare presented. The use of the medical proton beam of the Institute of Theoretical and Experimental Physics found to be effective for the treatment of children with mild and average forms of ICD. Irradiation of the pituitary gland at a dose of 70-100 Gy is accompanied by general and local radiation reactions which are not dangerous for children. The time of development of remission after irradiation depends on a degree of severity and features of a course of disease

Formation cross-sections and chromatographic separation of protactinium isotopes formed in proton-irradiated thorium metal

Energy Technology Data Exchange (ETDEWEB)

Radchenko, Valery; Engle, Jonathan W.; Wilson, Justin J.; Maassen, Joel R.; Nortier, Meiring F.; Birnbaum, Eva R.; John, Kevin D.; Fassbender, Michael E. [Los Alamos National Laboratory, NM (United States)

2016-08-01

Targeted alpha therapy (TAT) is a treatment method of increasing interest to the clinical oncology community that utilizes α-emitting radionuclides conjugated to biomolecules for the selective killing of tumor cells. Proton irradiation of thorium generates a number of α-emitting radionuclides with therapeutic potential for application via TAT. In particular, the radionuclide {sup 230}Pa is formed via the {sup 232}Th(p, 3n) nuclear reaction and partially decays to {sup 230}U, an α emitter which has recently received attention as a possible therapy nuclide. In this study, we estimate production yields for {sup 230}Pa and other Pa isotopes from proton-irradiated thorium based on cross section measurements. We adopt existing methods for the chromatographic separation of protactinium isotopes from proton irradiated thorium matrices to combine and optimize them for effective fission product decontamination.

Fractionated proton beam irradiation of pituitary adenomas

International Nuclear Information System (INIS)

Ronson, Brian B.; Schulte, Reinhard W.; Han, Khanh P.; Loredo, Lilia N.; Slater, James M.; Slater, Jerry D.

2006-01-01

Purpose: Various radiation techniques and modalities have been used to treat pituitary adenomas. This report details our experience with proton treatment of these tumors. Methods and Materials: Forty-seven patients with pituitary adenomas treated with protons, who had at least 6 months of follow-up, were included in this analysis. Forty-two patients underwent a prior surgical resection; 5 were treated with primary radiation. Approximately half the tumors were functional. The median dose was 54 cobalt-gray equivalent. Results: Tumor stabilization occurred in all 41 patients available for follow-up imaging; 10 patients had no residual tumor, and 3 had greater than 50% reduction in tumor size. Seventeen patients with functional adenomas had normalized or decreased hormone levels; progression occurred in 3 patients. Six patients have died; 2 deaths were attributed to functional progression. Complications included temporal lobe necrosis in 1 patient, new significant visual deficits in 3 patients, and incident hypopituitarism in 11 patients. Conclusion: Fractionated conformal proton-beam irradiation achieved effective radiologic, endocrinological, and symptomatic control of pituitary adenomas. Significant morbidity was uncommon, with the exception of postradiation hypopituitarism, which we attribute in part to concomitant risk factors for hypopituitarism present in our patient population

Optical and electrical properties of some electron and proton irradiated polymers

International Nuclear Information System (INIS)

Mishra, R.; Tripathy, S.P.; Sinha, D.; Dwivedi, K.K.; Ghosh, S.; Khathing, D.T.; Mueller, M.; Fink, D.; Chung, W.H.

2000-01-01

Ion beam treatment studies have been carried out to investigate the potential for improvements in conductivity properties of the polymers Polytetrafluroethylene (PTFE), Polyimide (PI), Polyethyleneterepthalate (PET) and Polypropylene (PP), after 2 MeV electron and 62 MeV proton irradiation. The shift in optical absorption edges as observed by UV-VIS spectra of the irradiated polymers has been correlated to the optical band-gap using Tauc's expression. A decrease in the optical band-gap has been observed in irradiated PP and PTFE, but no considerable change was found for the optical band-gaps of PET and PI. Further AC conductivity measurements confirmed an increase in conductivity in electron irradiated PP

Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Huo, Dayun; Guo, Xiaoxiang; Rong, Chen; Shi, Zhenwu, E-mail: zwshi@suda.edu.cn; Peng, Changsi, E-mail: changsipeng@suda.edu.cn

2016-01-01

Graphical abstract: - Highlights: • Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields. • Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces. • Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed. • Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results. - Abstract: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.

35-kV GaAs subnanosecond photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

1990-12-01

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation

CERN Document Server

Castaldini, A; Polenta, L; Canali, C; Nava, F

1999-01-01

The effect of irradiation on semi-insulating gallium arsenide Schottky diodes has been investigated by means of surface potential measurements and spectroscopic techniques. Before and after irradiation the electric field exhibits a Mott barrier-like distribution, and the box-shaped space charge modifies its distribution with irradiation. The increase in density or the generation of some traps changes the compensation ratio producing a deeper active region and a more homogeneous distribution of the electric field. The latter phenomenon is also observed by EBIC images of edge-mounted diodes.

Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

International Nuclear Information System (INIS)

Gow, J P D; Smith, P H; Hall, D J; Holland, A D; Murray, N J; Pool, P

2015-01-01

A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at −35.4°C with a 10 MeV equivalent proton fluence of 5.0 × 10 8 protons · cm −2 . The CCD236 is a large area (4.4 cm 2 ) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation

Dose determination of 600 MeV proton irradiated specimens

International Nuclear Information System (INIS)

Gavillet, D.

1991-01-01

The calculation method for the experimental determination of the atomic production cross section from the γ activity measurements are presented. This method is used for the determination of some isotope production cross sections for 600 MeV proton irradition in MANET steel, copper, tungsten, gold and titanium. The results are compared with some calculation. These values are used to determine the dose of specimens irradiated in the PIREX II facility. The results are discussed in terms of the irradiation parameters. A guide for the use of the production cross section determined in the dosimetry experiment are given. (author) tabs., refs

Refractive index depth profile in PMMA due to proton irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Rajta, I.; Budai, J.; Toth, Z.; Petrik, P.; Baradacs, E.

2006-01-01

Complete text of publication follows. During Proton Beam Writing the beam damage causes chain scissioning in the polymer resist material (e.g. PMMA (Polymethyl methacrylate)), producing smaller molecular weight chains. Hydrogen implantation also takes place at the end of range. Compaction of the sample has been observed too, which means that the sample density becomes higher at the places where proton irradiation occurred. Furthermore, P-beam Writing has been successfully used to create buried channel waveguides in PMMA [1], since proton irradiation increases the refractive index. There are two ways of fabricating waveguides using P-beam Writing, one of them applies direct micromachining of the high refractive index core followed by the coating of a lower refractive index cladding layer. In this application the refractive indices of the substrate, the core and the cladding have to be known, which should be homogeneous within the whole structure. The other method allows producing buried waveguides. In this case proton beam writing is used to modify the refractive index along the ion path in the sample, where most of the ion energy is deposited near the end of range also known as the Bragg peak. For polymers 10 -3 refractive index change has been reported, which is usually sufficient for forming waveguides. Those measurements of the refractive index change have been performed by the refracted near field technique. In this work we used ellipsometry, in order to measure the optical parameters of the P-beam treated sample near the surface, and along the Bragg curve. Ellipsometry measures the change in the polarization state of light occurring during reflection. This change is related to the quality of the reflecting surface (i.e. the physical structure, layer thicknesses, optical constants, surface roughness, etc.). >From these measurements the refractive index and the extinction coefficient can be determined rather accurately, which makes ellipsometry a powerful tool

Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation

Science.gov (United States)

Oliullah, Md.; Liu, J. Y.; Song, P.; Wang, Y.

2018-06-01

A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.

Direct-current polarization characteristics of various AlGaAs laser diodes

Science.gov (United States)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Transient radiation effects in GaAs semiconductor devices

International Nuclear Information System (INIS)

Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

1988-01-01

This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

Radiosensitization by PARP inhibition to proton beam irradiation in cancer cells

Energy Technology Data Exchange (ETDEWEB)

Hirai, Takahisa [Department of Radiation Oncology, Juntendo University Faculty of Medicine, Bunkyo-ku, Tokyo (Japan); Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Saito, Soichiro; Fujimori, Hiroaki [Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Matsushita, Keiichiro; Nishio, Teiji [Institute of Biomedical and Health Sciences, Hiroshima University, Hiroshima-shi, Hiroshima (Japan); Okayasu, Ryuichi [International Open Laboratory, National Institute of Radiological Science, Chiba-shi, Chiba (Japan); Masutani, Mitsuko, E-mail: mmasutan@nagasaki-u.ac.jp [Division of Chemotherapy and Clinical Cancer Research, National Cancer Center Research Institute, Chuo-ku, Tokyo (Japan); Department of Frontier Life Sciences, Nagasaki University Graduate School of Biomedical Sciences, Nagasaki (Japan)

2016-09-09

The poly(ADP-ribose) polymerase (PARP)-1 regulates DNA damage responses and promotes base excision repair. PARP inhibitors have been shown to enhance the cytotoxicity of ionizing radiation in various cancer cells and animal models. We have demonstrated that the PARP inhibitor (PARPi) AZD2281 is also an effective radiosensitizer for carbon-ion radiation; thus, we speculated that the PARPi could be applied to a wide therapeutic range of linear energy transfer (LET) radiation as a radiosensitizer. Institutes for biological experiments using proton beam are limited worldwide. This study was performed as a cooperative research at heavy ion medical accelerator in Chiba (HIMAC) in National Institute of Radiological Sciences. HIMAC can generate various ion beams; this enabled us to compare the radiosensitization effect of the PARPi on cells subjected to proton and carbon-ion beams from the same beam line. After physical optimization of proton beam irradiation, the radiosensitization effect of the PARPi was assessed in the human lung cancer cell line, A549, and the pancreatic cancer cell line, MIA PaCa-2. The effect of the PARPi, AZD2281, on radiosensitization to Bragg peak was more significant than that to entrance region. The PARPi increased the number of phosphorylated H2AX (γ-H2AX) foci and enhanced G2/M arrest after proton beam irradiation. This result supports our hypothesis that a PARPi could be applied to a wide therapeutic range of LET radiation by blocking the DNA repair response. - Highlights: • Effective radiosensitizers for particle radiation therapy have not been reported. • PARP inhibitor treatment radiosensitized after proton beam irradiation. • The sensitization at Bragg peak was greater than that at entrance region. • DSB induction and G2/M arrest is involved in the sensitization mechanism.

Electric dipole moment in KH{sub 2}PO{sub 4} systematically modified by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jin Kweon, Jung; Lee, Cheol Eui [Department of Physics and Institute for Nano Science, Korea University, Seoul 136-713 (Korea, Republic of); Noh, S. J.; Kim, H. S. [Department of Applied Physics, Dankook University, Yongin 448-701 (Korea, Republic of)

2012-01-01

We have carried out an impedance spectroscopy study on a series of proton-irradiated KH{sub 2}PO{sub 4} (KDP) systems. A systematic modification was observed in the transverse dipole moment of the proton-irradiated KDP systems, associated with hydrogen-ion displacements, as obtained from dielectric constant measurements by using a mean-field approximation. Besides, intercorrelation of the charge transport with the dielectric properties was revealed, both having closely to do with the hydrogen-bond modification.

Influence of reactor irradiation on the protons intercalation and stability of barium cerates and strontium cerates

International Nuclear Information System (INIS)

Aksenova, T.I.; Khromushin, I.V.; Zhotabaev, Zh.R.; Kornienko, P.A.; Munasbaeva, K.K.

2005-01-01

The work is devoted to study of reactor irradiation influence on the gas-solid exchange processes in the high-temperature proton semiconductors on the base of cerates and strontium. A number of new regularities of influence of content of some proton semiconductors on the gas-solid exchange processes was established. It is shown, that increase of rate of cation doping rate leads to considerable lowering in its of carbonic gas content, and therefore to improvement their tribological properties. It is revealed, that irradiation of polycrystalline samples leads to growth of oxygen amount desorbed from samples, whereas irradiation of monocrystalline samples practically does not has effect on the desorbed oxygen amount. It was found, that character of relation of intercalated in the sample protons depend on sample doping rate

Response of thyroid follicular cells to gamma irradiation compared to proton irradiation: II. The role of connexin 32

Science.gov (United States)

Green, L. M.; Tran, D. T.; Murray, D. K.; Rightnar, S. S.; Todd, S.; Nelson, G. A.

2002-01-01

The objective of this study was to determine whether connexin 32-type gap junctions contribute to the "contact effect" in follicular thyrocytes and whether the response is influenced by radiation quality. Our previous studies demonstrated that early-passage follicular cultures of Fischer rat thyroid cells express functional connexin 32 gap junctions, with later-passage cultures expressing a truncated nonfunctional form of the protein. This model allowed us to assess the role of connexin 32 in radiation responsiveness without relying solely on chemical manipulation of gap junctions. The survival curves generated after gamma irradiation revealed that early-passage follicular cultures had significantly lower values of alpha (0.04 Gy(-1)) than later-passage cultures (0.11 Gy(-1)) (P 0.1, n = 9). This strongly suggests that the presence of functional connexin 32-type gap junctions was contributing to radiation resistance in gamma-irradiated thyroid follicles. Survival curves from proton-irradiated cultures had alpha values that were not significantly different whether cells expressed functional connexin 32 (0.10 Gy(-1)), did not express connexin 32 (0.09 Gy(-1)), or were down-regulated (early-passage plus heptanol, 0.09 Gy(-1); late-passage plus heptanol, 0.12 Gy(-1)) (P > 0.1, n = 19). Thus, for proton irradiation, the presence of connexin 32-type gap junctional channels did not influence their radiosensitivity. Collectively, the data support the following conclusions. (1) The lower alpha values from the gamma-ray survival curves of the early-passage cultures suggest greater repair efficiency and/or enhanced resistance to radiation-induced damage, coincident with the expression of connexin 32-type gap junctions. (2) The increased sensitivity of FRTL-5 cells to proton irradiation was independent of their ability to communicate through connexin 32 gap junctions. (3) The fact that the beta components of the survival curves from both gamma rays and proton beams were

Slow-positron annihilation analysis on optical degradation of ZnO white paint irradiated by protons

International Nuclear Information System (INIS)

Xiao Haiying; Li Chundong; Yang Dezhuang; He Shiyu; Jia Jin; Ye Bangjiao

2009-01-01

The optical degradation in ZnO white paint under low energy proton exposure was investigated in terms of slow-positron annihilation spectroscopy. Experimental results show that with increasing proton fluence, the S-parameter of the Doppler broadening spectrum gradually decreases, and the W-parameter increases.The slope plot of the fitting S-W changes under the proton exposure. The decrease of S-parameter can be attributed to a decrease of zinc vacancy content and the formation of quasi-positronium. The quasi-positronium is viewed as a bounded state of a singly ionized oxygen vacancy (trapping an electron) with a positron, the formation of which could reduce the positron annihilation rate and thus the S-parameter. The decrease of S-parameter demonstrates the amount increase of singly ionized oxygen vacancy of ZnO white paint caused by proton irradiation. The change of the S-Wplot slope is related to the transformation of doubly ionized oxygen vacancies into singly ionized oxygen vacancies under proton irradiation. (authors)

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

International Nuclear Information System (INIS)

Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

Hydrogen Release From 800-MeV Proton-Irradiated Tungsten

International Nuclear Information System (INIS)

Oliver, Brian M.; Venhaus, Thomas J.; Causey, Rion A.; Garner, Francis A.; Maloy, Stuart A.

2002-01-01

Tungsten irradiated in spallation neutron sources such as those proposed for the Accelerator Production of Tritium (APT) project, or in proposed fusion reactors, will contain large quantities of generated helium and hydrogen gas. In the APT, spallation neutrons would be generated by the interaction of high energy (∼1 GeV) protons with solid tungsten rods or cylinders. In fusion reactors, tungsten used in a tokamak diverter will contain hydrogen, as well as deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and afterheat-induced rises in temperature is of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten was measured using a dedicated mass spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ∼323 K to ∼1473 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). Input parameters for the modeling, consisting of diffusivity, recombination rate coefficient, and trapping, are discussed. The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show reasonable agreement at high proton dose using a trap value of 1.4 eV and a trap density of 3%. There is also a small release fraction occurring at ∼600 K which predominates at lower proton doses, and which is relatively independent of dose. This lower-temperature release is predicted by TMAP if no traps are assumed, suggesting that this release may represent an adsorbed surface component

Raman spectroscopic study on sodium hyaluronate: an effect of proton and gamma irradiation

Czech Academy of Sciences Publication Activity Database

Synytsya, A.; Alexa, P.; Wagner, Richard; Davídková, Marie; Volka, K.

2011-01-01

Roč. 42, č. 3 (2011), s. 544-550 ISSN 0377-0486 Institutional research plan: CEZ:AV0Z10480505 Keywords : sodium hyaluronate * proton irradiation * gamma irradiation * Raman spectroscopy Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.087, year: 2011 http://onlinelibrary.wiley.com/doi/10.1002/jrs.2724/full

Mechanical properties of low temperature proton irradiated single crystal copper

International Nuclear Information System (INIS)

Schildcrout, M.

1975-01-01

Single crystal copper samples, of varying degrees of cold work, were irradiated near either liquid helium or liquid nitrogen temperature by 10.1-MeV protons. The internal friction and dynamic Young's modulus were observed as a function of either temperature or integrated proton flux. The primary effect of irradiation was to produce dislocation pinning. The initial pinning rate was found to be very sensitive to cold work. During irradiation it was found that heavily cold worked samples (25 percent compression) exhibited, almost exclusively, exponential pinning given by Y = e/sup --lambda phi/. This is attributed to the immobilization, rather than shortening, of loop lengths and is characterized by the pinning constant lambda. Exponential pinning was also found, to a smaller degree, in less heavily cold worked samples. Cold work appears to reduce the ''effective volume'' within which the defect clusters produced by irradiation, can immobilize dislocation segments. The bulk effect was observed after dislocation pinning was completed. Expressed in terms of the fractional change in Young's modulus per unit concentration of irradiation induced defects, it was measured at liquid helium temperature to be --18.5 +- 3. An anelastic process occurring near 10 0 K for low kHz frequencies and due to stress-induced ordering of point defects produced by irradiation has also been studied. The peak height per unit fluence was found to decrease with increasing cold work. The peak was not observed in samples compressed 25 percent. For the most carefully handled sample the activation energy was (1.28 +- 0.05) x 10 -2 eV, the attempt frequency was 10/sup 11.6 +- .8/ s -1 , the shape factor was 0.20, and the half width of the peak was 11 percent larger than the theoretical value calculated from the Debye equation for a single relaxation process

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

A New High-intensity Proton Irradiation Facility at the CERN PS East Area

CERN Document Server

Gkotse, B; Lima, P; Matli, E; Moll, M; Ravotti, F

2014-01-01

and IRRAD2), were heavily and successfully used for irradiation of particle detectors, electronic components and materials since 1992. These facilities operated with particle bursts - protons with momentum of 24GeV/c - delivered from the PS accelerator in “spills” of about 400ms (slow extraction). With the increasing demand of irradiation experiments, these facilities suffered from a number of restrictions such as the space availability, the maximum achievable particle flux and several access constraints. In the framework of the AIDA project, an upgrade of these facilities has been realized during the CERN long shutdown (LS1). While the new proton facility (IRRAD) will continue to be mainly devoted to the radiation hardness studies for the High Energy Physics (HEP) experimental community, the new mixed-field facility (CHARM) will mainly host irradiation experiments for the validation of electronic systems used in a...

The RADEX facility as a tool for studies of radiation damage under proton and spallation neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Koptelov, E.A.; Lebedev, S.G.; Matveev, V.A.; Sobolevsky, N.M. [Institute for Nuclear Research of Russian Academy of Sciences, Moscow (Russian Federation); Strebkov, Yu.S.; Subbotin, A.V. [Research and Development Institute of Power Engineering, Moscow (Russian Federation)

2001-03-01

We present results of numerical modeling for processes of primary protons and spallation neutrons interactions with structural materials at the RADiation EXperiment facility of the Neutron Complex. The installation has a vertical irradiation channel inside the beam stop for horizontally incident protons with energies up to 600 MeV of the Moscow Meson Factory of the INR (Institute for Nuclear Research) RAS (Russian Academy of Science). The calculations are based on a set of computer codes SHIELD and RADDAM, which were developed in the INR RAS and give data on point defect generation by irradiation, rate of accumulation of H and He atoms produced in nuclear reactions, energetic spectra of primary knocked-off atoms in collision displacements, temperature of samples under irradiation. Different positions of the channel, which are available by rotation of a target relatively the vertical axis for angles 0, 60, 120 and 180 degrees to the proton beam direction, are considered. Changes of irradiation damage parameters due to various inputs of primary protons and spallation neutrons at different target orientations are demonstrated. It is shown also that the spallation neutron facility RADEX may provide with perspective experimental possibilities for modeling of irradiation conditions for fusion reactors ITER and DEMO. (author)

Defocusing beam line design for an irradiation facility at the TAEA SANAEM Proton Accelerator Facility

Science.gov (United States)

Gencer, A.; Demirköz, B.; Efthymiopoulos, I.; Yiğitoğlu, M.

2016-07-01

Electronic components must be tested to ensure reliable performance in high radiation environments such as Hi-Limu LHC and space. We propose a defocusing beam line to perform proton irradiation tests in Turkey. The Turkish Atomic Energy Authority SANAEM Proton Accelerator Facility was inaugurated in May 2012 for radioisotope production. The facility has also an R&D room for research purposes. The accelerator produces protons with 30 MeV kinetic energy and the beam current is variable between 10 μA and 1.2 mA. The beam kinetic energy is suitable for irradiation tests, however the beam current is high and therefore the flux must be lowered. We plan to build a defocusing beam line (DBL) in order to enlarge the beam size, reduce the flux to match the required specifications for the irradiation tests. Current design includes the beam transport and the final focusing magnets to blow up the beam. Scattering foils and a collimator is placed for the reduction of the beam flux. The DBL is designed to provide fluxes between 107 p /cm2 / s and 109 p /cm2 / s for performing irradiation tests in an area of 15.4 cm × 21.5 cm. The facility will be the first irradiation facility of its kind in Turkey.

Differential gene expression in primary fibroblasts induced by proton and cobalt-60 beam irradiation

DEFF Research Database (Denmark)

Nielsen, Steffen; Bassler, Niels; Grzanka, Leszek

2017-01-01

profile: entrance, mid-SOBP and at the SOBP distal edge. Dose was delivered in three fractions × 3.5 Gy(RBE) (RBE 1.1). Cobalt-60 (Co-60) irradiation was used as reference. Real-time qPCR was performed to determine gene expression levels for 17 genes associated with inflammation response, fibrosis...... and angiogenesis. RESULTS: Differences in median gene expression levels were observed for multiple genes such as IL6, IL8 and CXCL12. Median IL6 expression was 30%, 24% and 47% lower in entrance, mid-SOBP and SOBP distal edge groups than in Co-60 irradiated cells. No genes were found to be oppositely regulated...... fibroblast cultures. Inflammatory factors were generally less extensively upregulated by proton irradiation compared with Co-60 photon irradiation. These effects may possibly influence the development of normal tissue damage in patients treated with proton beam therapy....

Creation of 3D microsculptures in PMMA by multiple angle proton irradiation

International Nuclear Information System (INIS)

Andrea, T.; Rothermel, M.; Reinert, T.; Koal, T.; Butz, T.

2011-01-01

In recent years the technique of proton beam writing has established itself as a versatile method for the creation of microstructures in resist materials. While these structures can be almost arbitrary in two dimensions, the creation of genuine 3D structures remains a challenge. At the LIPSION accelerator facility a new approach has been developed which combines aspects of ion beam tomography, so far solely an analysis method, with proton beam writing. Key element is the targeted irradiation from multiple angles in order to obtain a much broader range of 3D microstructures than has hitherto been possible. PMMA columns with a diameter of ∼90 μm were used as raw material and placed in an upright position on top of a rotational axis. Using 2.25 MeV protons patterns corresponding to the silhouettes of the desired structures were written from two or more directions. In a subsequent step of chemical etching irradiated portions were dissolved, leaving behind the finished 3D sculpture. Various objects have been created. For the demonstration of the method a 70 μm high model of the Eiffel tower has been sculpted by irradiation from two angles. Using irradiation from three angles a 40 μm wide screw with right-handed thread could be crafted which might find applications in micromachining. Also, a cage structure with a pore size of ca. 20 μm was written with the intention to use it as a scaffold for the growth of biological cells.

Resistivity changes in superconducting-cavity-grade Nb following high-energy proton irradiation

International Nuclear Information System (INIS)

Snead, C.L. Jr.; Hanson, A.; Greene, G.A.

1997-01-01

Niobium superconducting rf cavities are proposed for use in the proton LINAC accelerators for spallation-neutron applications. Because of accidental beam loss and continual halo losses along the accelerator path, concern for the degradation of the superconducting properties of the cavities with accumulating damage arises. Residual-resistivity-ratio (RRR) specimens of Nb, with a range of initial RRR's were irradiated at room temperature with protons at energies from 200 to 2000 MeV. Four-probe resistance measurements were made at room temperature and at 4.2 K both prior to and after irradiation. Nonlinear increases in resistivity simulate expected behavior in cavity material after extended irradiation, followed by periodic anneals to room temperature: For RRR = 316 material, irradiations to (2 - 3) x 10 15 p/cm 2 produce degradations up to the 10% level, a change that is deemed operationally acceptable. Without. periodic warming to room temperature, the accumulated damage energy would be up to a factor of ten greater, resulting in unacceptable degradations. Likewise, should higher-RRR material be used, for the same damage energy imparted, relatively larger percentage changes in the RRR will result

Proton irradiation augments the reduction in tumor progression observed with advanced age

Data.gov (United States)

National Aeronautics and Space Administration — Proton irradiation is touted for its improved tumor targeting due to the physical advantages of ion beams for radiotherapy. Recent studies from our laboratory have...

The comparison of microstructure and nanocluster evolution in proton and neutron irradiated Fe–9%Cr ODS steel to 3 dpa at 500 °C

Energy Technology Data Exchange (ETDEWEB)

Swenson, M.J., E-mail: matthewswenson1@u.boisestate.edu; Wharry, J.P.

2015-12-15

A model Fe–9%Cr oxide dispersion strengthened (ODS) steel was irradiated with protons or neutrons to a dose of 3 displacements per atom (dpa) at a temperature of 500 °C, enabling a direct comparison of ion to neutron irradiation effects at otherwise fixed irradiation conditions. The irradiated microstructures were characterized using transmission electron microscopy and atom probe tomography including cluster analysis. Both proton and neutron irradiations produced a comparable void and dislocation loop microstructure. However, the irradiation response of the Ti–Y–O oxide nanoclusters varied. Oxides remained stable under proton irradiation, but exhibited dissolution and an increase in Y:Ti composition ratio under neutron irradiation. Both proton and neutron irradiation also induced varying extents of Si, Ni, and Mn clustering at existing oxide nanoclusters. Protons are able to reproduce the void and loop microstructure of neutron irradiation carried out to the same dose and temperature. However, since nanocluster evolution is controlled by both diffusion and ballistic impacts, protons are rendered unable to reproduce the nanocluster evolution of neutron irradiation at the same dose and temperature. - Highlights: • Fe–9% Cr ODS was irradiated with protons and neutrons to 3 dpa at 500 °C. • Dislocation loop size and density were similar upon proton and neutron irradiation. • Oxide nanocluster size and density decreased more with neutron irradiation. • Oxide Y:Ti ratio increased from 0.54 to 0.97 upon neutron irradiation. • Irradiation induced enrichment of Si, Mn, and Ni at oxide locations.

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Proton Irradiation of CVD Diamond Detectors for High Luminosity Experiments at the LHC

CERN Document Server

Meier, D; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jany, C; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Marshall, R D; Mishina, M; Le Normand, F; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

CVD diamond shows promising properties for use as a position sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardn ess of diamond we exposed CVD diamond detector samples to 24~GeV/$c$ and 500~MeV protons up to a fluence of $5\\times 10^{15}~p/{\\rm cm^2}$. We measured the charge collection distance, the ave rage distance electron hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to $1\\ times 10^{15}~p/{\\rm cm^2}$ and decreases by $\\approx$40~\\% at $5\\times 10^{15}~p/{\\rm cm^2}$. Leakage currents of diamond samples were below 1~pA before and after irradiation. The particle indu ced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage curren t. We conclude that CVD diamond detectors are radia...

Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process

International Nuclear Information System (INIS)

Goiffon, V.; Magnan, P.; Saint-Pe, O.; Bernard, F.; Rolland, G.

2009-01-01

Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60 Co irradiations and large photodiode reverse current measurements. The only degradation observed was a photodiode dark current increase. It was found that ionizing dose effects dominate this rise by inducing generation centers at the interface between shallow trench isolations and depleted silicon regions. Displacement damages are is responsible for a large degradation of dark current non-uniformity. This work suggests that designing a photodiode tolerant to ionizing radiation can mitigate an important part of proton irradiation effects.

Measurement of characteristic prompt gamma rays emitted from oxygen and carbon in tissue-equivalent samples during proton beam irradiation.

Science.gov (United States)

Polf, Jerimy C; Panthi, Rajesh; Mackin, Dennis S; McCleskey, Matt; Saastamoinen, Antti; Roeder, Brian T; Beddar, Sam

2013-09-07

The purpose of this work was to characterize how prompt gamma (PG) emission from tissue changes as a function of carbon and oxygen concentration, and to assess the feasibility of determining elemental concentration in tissues irradiated with proton beams. For this study, four tissue-equivalent water-sucrose samples with differing densities and concentrations of carbon, hydrogen, and oxygen were irradiated with a 48 MeV proton pencil beam. The PG spectrum emitted from each sample was measured using a high-purity germanium detector, and the absolute detection efficiency of the detector, average beam current, and delivered dose distribution were also measured. Changes to the total PG emission from (12)C (4.44 MeV) and (16)O (6.13 MeV) per incident proton and per Gray of absorbed dose were characterized as a function of carbon and oxygen concentration in the sample. The intensity of the 4.44 MeV PG emission per incident proton was found to be nearly constant for all samples regardless of their carbon concentration. However, we found that the 6.13 MeV PG emission increased linearly with the total amount (in grams) of oxygen irradiated in the sample. From the measured PG data, we determined that 1.64 × 10(7) oxygen PGs were emitted per gram of oxygen irradiated per Gray of absorbed dose delivered with a 48 MeV proton beam. These results indicate that the 6.13 MeV PG emission from (16)O is proportional to the concentration of oxygen in tissue irradiated with proton beams, showing that it is possible to determine the concentration of oxygen within tissues irradiated with proton beams by measuring (16)O PG emission.

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

Application of the Moessbauer spectroscopy to the investigation of the proton irradiation effects in several iron compounds

International Nuclear Information System (INIS)

Kopcewicz, M.; Kotlicki, A.

1975-01-01

The results of a study into the influence of proton irradiation on the Moessbauer effect in FeSO 4 x 7H 2 O, K 4 [Fe(CN) 6 ] x 3H 2 O and K 3 [Fe(CN) 6 ] are reported. In the interpretation of the effect observed, the 'spike' model was applied. Chemical decomposition processes due to proton irradiation and formation of the superparamagnetic state of metallic iron were investigated. A Moessbauer observation of interstitial Fe 2+ ions in irradiated FeSO 4 x 7H 2 O was made. (Z.S.)

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Science.gov (United States)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

2016-04-01

The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Spectroscopy of GaAs quantum wells

International Nuclear Information System (INIS)

West, L.C.

1985-07-01

A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs

Spectroscopy of GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

West, L.C.

1985-07-01

A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

Enhancements of the critical currents of YBaCuO single crystals by neutron (n) and proton (p) irradiation

International Nuclear Information System (INIS)

Vlcek, B.M.; Frischherz, M.C.; Vishwanathan, H.K.; Welp, U.; Crabtree, G.W.; Kirk, M.A.

1992-01-01

We present results of magnetization hysteresis and T c measurements of neutron and proton irradiated YBaCuO single crystals. The crystals used for comparison were irradiated to a fluence of 2x10 7 n/cm 2 (n,E > 0.1MeV) and 1x10 16 p/cm 2 (p,E=3.5MeV). The critical currents at 1T and 10K are enhanced by a factor of 5 for the neutron irradiated and a factor of 9 for the proton irradiated sample respectively. After irradiation the crystals were annealed at 100, 200 and 300C for 8h each in air. Following each annealing step the critical temperature and the magnetization hysteresis at 10 and 70K was measured. Upon annealing, we observe a decrease of the critical currents, which is more pronounced for the proton irradiated sample. This decrease is related to the removal of point defects or their small clusters. Thus, their contribution to pinning can be studied. The critical temperature decreases after both types of irradiation by about 0.5K and is fully recovered after annealing

Chemical changes in PMMA as a function of depth due to proton beam irradiation

International Nuclear Information System (INIS)

Szilasi, S.Z.; Huszank, R.; Szikra, D.; Vaczi, T.; Rajta, I.; Nagy, I.

2011-01-01

Highlights: → Chemical changes were investigated as a function of depth in proton irradiated PMMA → The depth profile of numerous functional groups was determined along the depth → The degree of chemical modification strongly depends on the LET of protons → At low-fluences the zone of maximal modification is restricted to the Bragg peak → At higher fluences the zone of max. modification extends towards the sample surface. - Abstract: In this work we determined depth profiles of the chemical change in PMMA irradiated with 2 MeV protons by infrared spectroscopic and micro-Raman measurements. The measurements were carried out on 10 μm thin stacked foil samples using an infrared spectrometer in universal attenuated total reflectance (UATR) and transmission modes; while the thick samples were analyzed with a confocal micro-Raman spectrometer. The depth profiles of the changes formed due to the various delivered fluences were compared to each other. The measurements show the strong dependence of the degree of modification on the energy transfer from the decelerating protons. Depth profiles reveal that at the fluences applied in this work the entire irradiated volume suffered some chemical modifications. In case of low-fluence samples the zone of maximal modification is restricted only to the Bragg peak, but with increasing fluences the region of maximal modification extends towards the sample surface.

Developments, characterization and proton irradiation damage tests of AlN detectors for VUV solar observations

Energy Technology Data Exchange (ETDEWEB)

BenMoussa, A., E-mail: ali.benmoussa@stce.be [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Soltani, A.; Gerbedoen, J.-C [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Saito, T. [Department of Environment and Energy, Tohoku Institute of Technology, 35-1, Yagiyama-Kasumi-cho, Taihaku-ku, Sendai, Miyagi 982-8577 (Japan); Averin, S. [Fryazino Branch of the Kotel’nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, 141190 Square Vvedenski 1, Fryazino, Moscow Region (Russian Federation); Gissot, S.; Giordanengo, B. [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Berger, G. [Catholic University of Louvain-la-Neuve, Chemin du Cyclotron 2, B-1348 Louvain la Neuve (Belgium); Kroth, U. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany); De Jaeger, J.-C. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Gottwald, A. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany)

2013-10-01

For next generation spaceborne solar ultraviolet radiometers, innovative metal–semiconductor–metal detectors based on wurtzite aluminum nitride are being developed and characterized. A set of measurement campaigns and proton irradiation damage tests was carried out to obtain their ultraviolet-to-visible characterization and degradation mechanisms. First results on large area prototypes up to 4.3 mm diameter are presented here. In the wavelength range of interest, this detector is reasonably sensitive and stable under brief irradiation with a negligible low dark current (3–6 pA/cm{sup 2}). No significant degradation of the detector performance was observed after exposure to protons of 14.4 MeV energy, showing a good radiation tolerance up to fluences of 1 × 10{sup 11} protons/cm{sup 2}.

Charge collection efficiency of GaAs detectors studied with low-energy heavy charged particles

CERN Document Server

Bates, R; Linhart, V; O'Shea, V; Pospísil, S; Raine, C; Smith, K; Sinor, M; Wilhelm, I

1999-01-01

Epitaxially grown GaAs layers have recently been produced with sufficient thickness and low enough free carrier concentration to permit their use as radiation detectors. Initial tests have shown that the epi-material behaves as a classical semiconductor as the depletion behaviour follows the square root dependency on the applied bias. This article presents the results of measurements of the growth of the active depletion depth with increasing bias using low-energy protons and alpha particles as probes for various depths and their comparison to values extrapolated from capacitance measurements. From the proton and alpha particle spectroscopic measurements, an active depth of detector material that collects 100% of the charge generated inside it was determined. The consistency of these results with independent capacitance measurements supports the idea that the GaAs epi-material behaves as a classical semiconductor. (author)

Neutron and proton tests of different technologies for the upgrade of cold readout electronics of the ATLAS Hadronic Endcap Calorimeter

CERN Document Server

Nagel, Martin

2012-01-01

The expected increase of total integrated luminosity by a factor of ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS Hadronic Endcap Calorimeter (HEC). New more radiation hard technologies have been studied: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons up to an integrated fluence of 2.2 \\cdot 10^{16} n/cm2 and with 200 MeV protons up to an integrated fluence of 2.6 \\cdot 10^{14} p/cm2. Comparisons of transistor parameters such as the gain for both types of irradiations are presented.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

Subnanosecond photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.

1990-01-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

Subnanosecond photoconductive switching in GaAs

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.

1991-04-01

We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

Effect of front and rear incident proton irradiation on silicon solar cells

Science.gov (United States)

Anspaugh, Bruce; Kachare, Ram

1987-01-01

Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.

Nanoindentation and in situ microcompression in different dose regimes of proton beam irradiated 304 SS

Energy Technology Data Exchange (ETDEWEB)

Reichardt, A. [Department of Nuclear Engineering, University of California, Berkeley, CA (United States); Lupinacci, A. [National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Frazer, D.; Bailey, N.; Vo, H.; Howard, C. [Department of Nuclear Engineering, University of California, Berkeley, CA (United States); Jiao, Z. [Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI (United States); Minor, A.M. [National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Chou, P. [Electric Power Research Institute, Palo Alto, CA (United States); Hosemann, P., E-mail: peterh@berkeley.edu [Department of Nuclear Engineering, University of California, Berkeley, CA (United States)

2017-04-01

Recent developments in micromechanical testing have allowed for the efficient evaluation of radiation effects in micron-scale volumes of ion-irradiated materials. In this study, both nanoindentation and in situ SEM microcompression testing are carried out on 10 dpa proton beam irradiated 304 stainless steel to assess radiation hardening and radiation-induced deformation mechanisms in the material. Using a focused ion beam (FIB), arrays of 2 μm × 2 μm cross-section microcompression pillars are fabricated in multiple dose regimes within the same grain, providing dose-dependent behavior in a single crystal orientation. Analysis of the microcompression load-displacement data and real-time SEM imaging during testing indicates significant hardening, as well as increased localization of deformation in the irradiated material. Although nanoindentation results suggest that irradiation hardening saturates at low doses, microcompression results indicate that the pillar yield stress continues to rise with dose above 10 dpa in the tested orientation. - Highlights: •Mechanical properties are probed in small volumes of proton irradiated 304SS. •Nanoindentation indicates saturation of irradiation hardening at doses of 5–10 dpa. •Microcompression of irradiated specimens suggest localized deformation.

Influence of the interface on the magnetic properties of NiZn ferrite thin films treated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Jiang, X.D. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Guo, D.W. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, C.H., E-mail: c.h.zhang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Fan, X.L.; Chai, G.Z. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xue, D.S., E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2015-09-01

In order to systematically investigate the influence of the interface on the magnetic properties, polycrystalline NiZn ferrite thin films were irradiated with 60 keV proton in the dose range from 5 × 10{sup 12} to 5 × 10{sup 16} ions/cm{sup 2}. A non-destructive approach by proton irradiation was found to finely adjust the magnetic properties of polycrystalline NiZn ferrite thin films such as coercivity, perpendicular magnetic anisotropy as well as the effective g value. The coercivity is about 725 Oe for high proton dose ferrite, which is twice larger than the unirradiated one. The ferromagnetic resonance measurements indicated that perpendicular magnetic anisotropy and the effective g value increase with the irradiation dose. Our finding indicates that all modifications of these magnetic properties were associated with the change of interface due to the diffusion and the stress induced by proton irradiation. The change of the effective g value is a result of lattice expansion and the decrease of the magnetic dipole interaction between the columnar grains. This work provides a feasible way to tailor the magnetic properties of thin films by ion irradiation and promotes investigations for the stability of magnetic thin film devices in space or unclear radiation environments.

Permeability coefficient of proton irradiated polyethylene terephatalate thin films

International Nuclear Information System (INIS)

Bassani, L.C.; Santos, W.M.S.; Marechal, B.

1983-01-01

The principle of operation of an apparatus developed to study gas permation through thin films is described and the measurement method is discussed. Use is made of diffusion theory to obtain a expression for the permeability coefficient as a function of the rate of increase of the pressure in the receiving volume. The Gibbs function for permeation of Helium through Polyethylene Terephtalate (P.E.T.) is determined. The permeability coefficient of Helium is found to increase significantly with the range of the implanted protons although the incident charge has been kept constant. The hypothesis of structural modifications of the proton implanted P.E.T. seems to be confirmed by small angles X-rays scattering experiments on the irradiated samples. (Author) [pt

Strain buildup in GaAs due to 100 MeV Ag ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

2013-12-01

The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

Vacancies and negative ions in GaAs

International Nuclear Information System (INIS)

Corbel, C.

1991-01-01

We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration

Defocusing beam line design for an irradiation facility at the TAEA SANAEM Proton Accelerator Facility

CERN Document Server

Gencer, A.; Efthymiopoulos, I.; Yiğitoğlu, M.

2016-01-01

Electronic components must be tested to ensure reliable performance in high radiation environments such as Hi-Limu LHC and space. We propose a defocusing beam line to perform proton irradiation tests in Turkey. The Turkish Atomic Energy Authority SANAEM Proton Accelerator Facility was inaugurated in May 2012 for radioisotope production. The facility has also an R&D room for research purposes. The accelerator produces protons with 30 MeV kinetic energy and the beam current is variable between View the MathML source10μA and View the MathML source1.2mA. The beam kinetic energy is suitable for irradiation tests, however the beam current is high and therefore the flux must be lowered. We plan to build a defocusing beam line (DBL) in order to enlarge the beam size, reduce the flux to match the required specifications for the irradiation tests. Current design includes the beam transport and the final focusing magnets to blow up the beam. Scattering foils and a collimator is placed for the reduction of the beam ...

Measurement and investigation of proton irradiation-induced charge transfer inefficiency in PPD CIS at different integration times

Science.gov (United States)

Xue, Yuanyuan; Wang, Zujun; Zhang, Fengqi; Bian, Jingying; Yao, Zhibin; He, Baoping; Liu, Minbo; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao; Jin, Junshan

2018-04-01

Charge transfer inefficiency (CTI) is an important parameter for photodiode (PPD) CMOS image sensors (CISs). A test system was built and used to measure the CTI of PPD CIS devices at different integration times. The radiation effects of 3 MeV and 10 MeV protons on the CTI were investigated. The experiments were carried out at the EN Tandem Van de Graaff accelerator at proton fluences in the range 1010 to 1011 p/cm2. The CTI was measured within the 2 h following proton radiations. The dependence of CTI on integration time, proton energy and fluence were investigated. The CTI was observed to increase after proton irradiation: with the effect of irradiation with 3 MeV proton being more severe than that with 10 MeV protons. The CTI was also observed to decrease with increasing integration time, which is thought to be related to the charge density in the space charge region (SCR) of the CIS devices. This work has provided a simple method to measure the CTI and helped us to understand proton radiation effects on the CTI of PPD CISs.

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors.

Science.gov (United States)

Yang, Gwangseok; Jang, Soohwan; Ren, Fan; Pearton, Stephen J; Kim, Jihyun

2017-11-22

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-Ga 2 O 3 nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-Ga 2 O 3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 10 15 cm -2 . Greater radiation-induced degradation occurs in the conductive channel of the β-Ga 2 O 3 nanobelt than at the contact between the metal and β-Ga 2 O 3 . The on/off ratio of the exfoliated β-Ga 2 O 3 FETs was maintained even after proton doses up to 2 × 10 15 cm -2 . The radiation-induced damage in the β-Ga 2 O 3 -based FETs was significantly recovered after rapid thermal annealing at 500 °C. The outstanding radiation durability of β-Ga 2 O 3 renders it a promising building block for space applications.

Electrochemical behaviour of gold and stainless steel under proton irradiation and active RedOx couples

Energy Technology Data Exchange (ETDEWEB)

Leoni, E. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)], E-mail: elisa.leoni@polytechnique.edu; Corbel, C. [Laboratoire des Solides Irradies, Ecole Polytechnique, 91128 Palaiseau (France)], E-mail: catherine.corbel@polytechnique.fr; Cobut, V. [Laboratoire Atomes et Molecules en Astrophysique, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville/Oise, 95031 Cergy-Pontoise Cedex (France); Simon, D. [CNRS-CERI 3a rue de la Ferollerie, 45071 Cedex 2 Orleans (France); Feron, D. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)], E-mail: Damien.FERON@cea.fr; Roy, M.; Raquet, O. [Commissariat a l' Energie Atomique, DEN/DANS/DPC/SCCME, CEA-Saclay, 91191 Gif sur Yvette (France)

2007-12-01

Model experiments are reported where proton beams delivered by the cyclotron located at CERI (CNRS-Orleans) are used for irradiating AISI 316L/water and Au/water high purity interfaces with 6 MeV protons. The free exchange potentials at the interfaces are recorded as a function of time at room temperature in situ before, under, and after proton irradiation. The evolutions are compared to those calculated for the Nernst potentials associated with the radiolytic RedOx couples. It is shown how the comparison gives evidence that five radiolytic species - O{sub 2}{center_dot}, H{sub 2}O{sub 2}, HO{sub 2}{sup -}, HO{sub 2}{center_dot} and O{sub 2}{center_dot}{sup -} exchange electrons at the Au interfaces in a range of dose rates that vary over three orders of magnitudes, i.e. 0.0048 < dr(10{sup 7} Gy h{sup -1}) < 4.8. The balance between the electron exchanges at Au interfaces is adjusted by the RedOx reactions associated with the above species. The free exchange potential reaches the same steady value for Au and AISI 316L interfaces irradiated at high doses, {>=}2.5 x 10{sup 7} Gy, (0.020 {+-} 0.025) V versus NHE. Such low values are the first ones to be reported. The HO{sub 2}{center_dot} and O{sub 2}{center_dot}{sup -} radical disproportionations play a key role and control the potential at the interfaces under 6 MeV proton flux. This role is generally mostly overlooked for gamma irradiation.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

2016-04-28

The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

2016-01-01

The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

Investigation of the effects of high-energy proton-beam irradiation on metal-oxide surfaces by using methane adsorption isotherms

International Nuclear Information System (INIS)

Kim, Euikwoun; Lee, Junggil; Kim, Jaeyong; Kim, Kyeryung

2012-01-01

The creation of possible local defects on metal-oxide surfaces due to irradiation with a high-energy proton beam was investigated by using a series of gas adsorption isotherms for methane (CH 4 ) on a MgO powder surface. After a MgO powder surface having only a (100) surface had been irradiated with a 35-MeV proton beam, the second atomic layer of methane had completely disappeared while two distinct atomic layers were found in a layer-by-layer fashion on the surfaces of unirradiated samples. This subtle modification of the surface is evidenced by a change of the contrasts in the morphologies measured a using a transmission electron microscopy. Combined results obtained from an electron microscopy and methane adsorption isotherms strongly suggest that the high-energy proton-beam irradiation induced a local surface modification by imparting kinetic energy to the sample. The calculation of the 2-dimensional compressibility values, which are responsible for the formation of the atomic layers, confirmed the surface modification after irradiating surface-clean MgO powders with a proton beam.

A study of proton polarization in ammonia (NH sub 3 ) under irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Belyaev, A.A.; Get' man, V.A.; Dzyubak, A.P.; Karnaukhov, I.M.; Lukhanin, A.A.; Neffa, A.Yu.; Semisalov, I.L.; Sorokin, P.V.; Sporov, E.S.; Telegin, Yu.N.; Tolmachev, I.A.; Trotsenko, V.I. (Kharkov Institute of Physics and Technology, Ukrainian SSR, Academy of Sciences, 310108 Kharkov, USSR (UA))

1989-05-05

The proton polarization in irradiated NH{sub 3} has been measured as a function of the irradiation dose and annealing temperature. The analysis of the experimental data obtained shows that under low-temperature'' irradiation along with the NH{sup {minus}}{sub 2} the e{sub tr}-radical is likely to be formed which contributes to the polarization build-up and relaxation and influences the radiation damage resistance of the target.

Dosimetric comparison of proton and photon three-dimensional, conformal, external beam accelerated partial breast irradiation techniques

International Nuclear Information System (INIS)

Kozak, Kevin R.; Katz, Angela; Adams, Judith C.; Crowley, Elizabeth M.; Nyamwanda, Jacqueline A.C.; Feng, Jennifer K.C.; Doppke, Karen P.; DeLaney, Thomas F.; Taghian, Alphonse G.

2006-01-01

Purpose: To compare the dosimetry of proton and photon-electron three-dimensional, conformal, external beam accelerated partial breast irradiation (3D-CPBI). Methods and Materials: Twenty-four patients with fully excised, Stage I breast cancer treated with adjuvant proton 3D-CPBI had treatment plans generated using the mixed-modality, photon-electron 3D-CPBI technique. To facilitate dosimetric comparisons, planning target volumes (PTVs; lumpectomy site plus 1.5-2.0 cm margin) and prescribed dose (32 Gy) were held constant. Plans were optimized for PTV coverage and normal tissue sparing. Results: Proton and mixed-modality plans both provided acceptable PTV coverage with 95% of the PTV receiving 90% of the prescribed dose in all cases. Both techniques also provided excellent dose homogeneity with a dose maximum exceeding 110% of the prescribed dose in only one case. Proton 3D-CPBI reduced the volume of nontarget breast tissue receiving 50% of the prescribed dose by an average of 36%. Statistically significant reductions in the volume of total ipsilateral breast receiving 100%, 75%, 50%, and 25% of the prescribed dose were also observed. The use of protons resulted in small, but statistically significant, reductions in the radiation dose delivered to 5%, 10%, and 20% of ipsilateral and contralateral lung and heart. The nontarget breast tissue dosimetric advantages of proton 3D-CPBI were not dependent on tumor location, breast size, PTV size, or the ratio of PTV to breast volume. Conclusions: Compared to photon-electron 3D-CPBI, proton 3D-CPBI significantly reduces the volume of irradiated nontarget breast tissue. Both approaches to accelerated partial breast irradiation offer exceptional lung and heart sparing

The gas bubbles distribution in 600 MeV protons irradiated aluminium

International Nuclear Information System (INIS)

Gavillet, D.; Martin, J.L.; Victoria, M.; Green, W.

1984-01-01

In order to simulate the damage produced by 14 MeV fusion neutrons, thin foils of high purity Al have been irradiated by a proton beam of 580 MeV (120μA). After irradiation at temperatures higher than 0.5 Tm transmission electron microscope observations of gas bubbles distribution were performed. At 200 0 C a uniform distribution of bubbles has been observed inside the grain. The average distance between bubbles and their density have been determined. The gas pressure inside the bubbles has been estimated [fr

Study of crosslinking onset and hydrogen annealing of ultra-high molecular weight polyethylene irradiated with high-energy protons

Science.gov (United States)

Wilson, John Ford

1997-09-01

Ultra high molecular weight polyethylene (UHMW-PE) is used extensively in hip and knee endoprostheses. Radiation damage from the sterilization of these endoprostheses prior to surgical insertion results in polymer crosslinking and decreased oxidative stability. The motivation for this study was to determine if UHMW-PE could be crosslinked by low dose proton irradiation with minimal radiation damage and its subsequent deleterious effects. I found that low dose proton irradiation and post irradiation hydrogen annealing did crosslink UHMW-PE and limit post irradiation oxidation. Crosslinking onset was investigated for UHMW-PE irradiated with 2.6 and 30 MeV H+ ions at low doses from 5.7 × 1011-2.3 × 1014 ions/cm2. Crosslinking was determined from gel permeation chromatography (GPC) of 1,2,4 trichlorobenzene sol fractions and increased with dose. Fourier transform infrared spectroscopy (FTIR) showed irradiation resulted in increased free radicals confirmed from increased carbonyl groups. Radiation damage, especially at the highest doses observed, also showed up in carbon double bonds and increased methyl end groups. Hydrogen annealing after ion irradiation resulted in 40- 50% decrease in FTIR absorption associated with carbonyl. The hydrogen annealing prevented further oxidation after aging for 1024 hours at 80oC. Hydrogen annealing was successful in healing radiation damage through reacting with the free radicals generated during proton irradiation. Polyethylenes, polyesters, and polyamides are used in diverse applications by the medical profession in the treatment of orthopedic impairments and cardiovascular disease and for neural implants. These artificial implants are sterilized with gamma irradiation prior to surgery and the resulting radiation damage can lead to accelerated deterioration of the implant properties. The findings in this study will greatly impact the continued use of these materials through the elimination of many problems associated with radiation

Neutron and proton tests of different technologies for the upgrade of the cold readout electronics of the ATLAS Hadronic End-cap Calorimeter

CERN Document Server

INSPIRE-00030110

2013-01-01

The expected increase of total integrated luminosity by a factor ten at the HL-LHC compared to the design goals for LHC essentially eliminates the safety factor for radiation hardness realized at the current cold amplifiers of the ATLAS Hadronic End-cap Calorimeter (HEC). New more radiation hard technologies have been studied: SiGe bipolar, Si CMOS FET and GaAs FET transistors have been irradiated with neutrons up to an integrated fluence of 2.2 x 10^{16} n/cm^2 and with 200 MeV protons up to an integrated fluence of 2.6 x 10^{14} p/cm^2. Comparisons of transistor parameters such as the gain for both types of irradiations are presented.

Results of treatment of Icenko-Cushing disease with proton beam irradiation of the pituitary gland

International Nuclear Information System (INIS)

Marova, E.I.; Starkova, N.T.; Kirpatovskaya, L.E.; Kolesnikova, G.S.; Bukhman, A.I.; Rozhinskaya, L.Ya.; Bel'chenko, L.V.

1987-01-01

Proton beam therapy was given to 98 patients with Icenko-Cushing disease aged 15 to 40. Mild cases were treated by proton beam irradiation only while severe cases were managed using proton beam therapy combined with unilateral adrenalectomy or ortho-para-DDD. Catamnesis duration varied from 3 to 5 years. In most cases the exposure dose was 80-90 Gy (50-110 Gy). The procedure was well tolerated by all the patients. A dynamic multipolar converting method with 15-20 entrance poles in the left temporal area was employed (with the beam energy of 200 MeV). Stabilization of the course of disease and some clinical improvement were observed in most of the patients 3-4 months after proton beam therapy. In 6-36 months after irradiation 90% of the patients showed normal biochemical indices and the absence of any clinical signs of the disease. Thus the results of proton beam therapy of 98 patients with Icenko-Cushing disease after a follow-up of 3-5 years showed a high efficacy of this type of treatment. The method can be used alone or in combination with unilateral adrenalectomy as well as with oral administration of ortho-para-DDD

The effects of oxide evolution on mechanical properties in proton- and neutron-irradiated Fe-9%Cr ODS steel

Energy Technology Data Exchange (ETDEWEB)

Swenson, M.J., E-mail: matthewswenson1@u.boisestate.edu [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Dolph, C.K. [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Wharry, J.P. [Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

2016-10-15

The objective of this study is to evaluate the effect of irradiation on the strengthening mechanisms of a model Fe-9%Cr oxide dispersion strengthened steel. The alloy was irradiated with protons or neutrons to a dose of 3 displacements per atoms at 500 °C. Nanoindentation was used to measure strengthening due to irradiation, with neutron irradiation causing a greater increase in yield strength than proton irradiation. The irradiated microstructures were characterized using transmission electron microscopy and atom probe tomography (APT). Cluster analysis reveals solute migration from the Y-Ti-O-rich nanoclusters to the surrounding matrix after both irradiations, though the effect is more pronounced in the neutron-irradiated specimen. Because the dissolved oxygen atoms occupy interstitial sites in the iron matrix, they contribute significantly to solid solution strengthening. The dispersed barrier hardening model relates microstructure evolution to the change in yield strength, but is only accurate if solid solution contributions to strengthening are considered simultaneously.

Multi-MW accelerator target material properties under proton irradiation at Brookhaven National Laboratory linear isotope producer

Science.gov (United States)

Simos, N.; Ludewig, H.; Kirk, H.; Dooryhee, E.; Ghose, S.; Zhong, Z.; Zhong, H.; Makimura, S.; Yoshimura, K.; Bennett, J. R. J.; Kotsinas, G.; Kotsina, Z.; McDonald, K. T.

2018-05-01

The effects of proton beams irradiating materials considered for targets in high-power accelerator experiments have been studied using the Brookhaven National Laboratory's (BNL) 200 MeV proton linac. A wide array of materials and alloys covering a wide range of the atomic number (Z) are being scoped by the high-power accelerator community prompting the BNL studies to focus on materials representing each distinct range, i.e. low-Z, mid-Z and high-Z. The low range includes materials such as beryllium and graphite, the midrange alloys such as Ti-6Al-4V, gum metal and super-Invar and finally the high-Z range pure tungsten and tantalum. Of interest in assessing proton irradiation effects are (a) changes in physiomechanical properties which are important in maintaining high-power target functionality, (b) identification of possible limits of proton flux or fluence above which certain materials cease to maintain integrity, (c) the role of material operating temperature in inducing or maintaining radiation damage reversal, and (d) phase stability and microstructural changes. The paper presents excerpt results deduced from macroscopic and microscopic post-irradiation evaluation (PIE) following several irradiation campaigns conducted at the BNL 200 MeV linac and specifically at the isotope producer beam-line/target station. The microscopic PIE relied on high energy x-ray diffraction at the BNL NSLS X17B1 and NSLS II XPD beam lines. The studies reveal the dramatic effects of irradiation on phase stability in several of the materials, changes in physical properties and ductility loss as well as thermally induced radiation damage reversal in graphite and alloys such as super-Invar.

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

Science.gov (United States)

Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

1990-01-01

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Positronium formation in helium bubbles in 600 MeV proton-irradiated aluminium

DEFF Research Database (Denmark)

Jensen, K. O.; Eldrup, Morten Mostgaard; Singh, Bachu Narain

1985-01-01

Aluminium samples containing helium bubbles produced by 600 MeV proton irradiation at 430°C were investigated by positron annihilation; both lifetime and angular correlation measurements were made. The angular correlation curves contain an unusually narrow component. This component is associated...

Field ion microscopy study of depleted zones in tungsten after proton irradiation

International Nuclear Information System (INIS)

Farnum, D.J.; Sommer, W.F.; Inal, O.T.; Yu, J.

1986-01-01

Depleted zones in tungsten, that resulted from medium-energy proton irradiations, were studied using the Field Ion Microscope (FIM). The shapes and sizes of depleted zones is an important aspect of basic radiation damage. These data can be compared to models that have been suggested as well as aid development of new models. These depleted volumes are of interest not only for an understanding of basic radiation effects, but also because they affect material properties and can act as nucleation sites for voids or gas bubbles. Depleted zones were produced in annealed tungsten wires by irradiation with 600 to 800 MeV protons at the Los Alamos Meson Physics Facility. The defects observed in the irradiated samples included vacancies, depleted zones, grain boundaries, and dislocations. Single vacancies were the most commonly observed defect. Of the samples ''imaged,'' over 50 depleted zones were found within the area of high resolution in the area between the prominent [112] poles in a [110] oriented sample. The number of layers photographed in each sample was dependent upon the initial shape of the tip and ranged from 60 to 200 [110] sequential layers

Study of Microhardness and Electrical Properties of Proton Irradiated Polyether sulfone

International Nuclear Information System (INIS)

Quresh, A.

2006-01-01

Polyethersulfone (PES) films were irradiated with 3 MeV proton beams in the fluence range 10 1 3-10 1 5 ions/cm 2 . The irradiated samples were characterized by a Vickers' microhardness tester at a load of 100-1000 mN, and electrical properties in the frequency range 100 Hz to 1MHz by an LCR meter. It is observed that microhardness increases as fluence increases up to the fluence of 10 1 4 ions/cm 2 and decreases on further increase of the fluence. This may be attributed to the fact that a cross linking phenomenon dominates up to the fluence of 10 1 4 ions/cm 2 . There is an exponential increase in conductivity and the effect of irradiation is significant at higher fluences. The dielectric constant/loss was found to change significantly due to irradiation. It has been found that dielectric response in both pristine and irradiated samples obey universal law is given by ε α f n -1.These results were corroborated with structural changes observed in FTIR spectra of pristine and irradiated samples

Long-lived isotopes production in Pb-Bi target irradiated by high energy protons

Energy Technology Data Exchange (ETDEWEB)

Korovin, Y.A.; Konobeyev, A.Y.; Pereslavtsev, P.E. [Obninsk Institute of Nuclear Power Engineering, Obninsk (Russian Federation)

1995-10-01

Concentration of long-lived isotopes has been calculated for lead and lead-bismuth targets irradiated by protons with energy 0.4, 0.8, 1.0 and 1.6 GeV. The time of irradiation is equal from 1 month up to 2 years. The data libraries BROND, ADL and MENDL have been used to obtain the rate of nuclide transmutation. All calculations have been performed using the SNT code.

Hall effect measurements on proton-irradiated ROSE samples

International Nuclear Information System (INIS)

Biggeri, U.; Bruzzi, M.; Borchi, E.

1997-01-01

Bulk samples obtained from two wafers of a silicon monocrystal material produced by Float-Zone refinement have been analyzed using the four-point probe method. One of the wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10 13 p/cm 2 to 2x10 14 p/cm 2 . Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 minutes at 100C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. The irradiated samples show the same exponential dependence of the resistivity and of the Hall coefficient on the temperature from 370K to 100K, corresponding to the presence of radiation-induced deep energy levels around 0.6-0.7eV in the silicon gap. The free carrier concentrations (n, p) have been evaluated in the investigated fluence range. The inversion of the conductivity type from n to p occurred respectively at 7x10 13 p/cm 2 and at 4x10 13 p/cm 2 before and after the annealing treatment, for both the two sets. Only slight differences have been detected between the pure and oxygenated samples

Defect microstructure in copper alloys irradiated with 750 MeV protons

DEFF Research Database (Denmark)

Zinkle, S.J.; Horsewell, A.; Singh, B.N.

1994-01-01

Transmission electron microscopy (TEM) disks of pure copper and solid solution copper alloys containing 5 at% of Al, Mn, or Ni were irradiated with 750 MeV protons to damage levels between 0.4 and 2 displacements per atom (dpa) at irradiation temperatures between 60 and 200 degrees C. The defect...... significant effect on the total density of small defect clusters, but they did cause a significant decrease in the fraction of defect clusters resolvable as SFT to similar to 20 to 25%. In addition, the dislocation loop density (> 5 nm diameter) was more than an order of magnitude higher in the alloys...

Tensile properties in zircaloy-II after 590 MeV proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Dai, Y. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Victoria, M. [Ecole Polytechnique Federale, Lausanne (Switzerland)

1997-09-01

In order to investigate radiation potential damage effects on the SINQ Zircaloy-rod target, four Zircaloy-II tensile specimens were irradiated at the PIREX facility in 1995 to a proton fluence about 3x10{sup 20} p/cm{sup 2}, which produced a radiation damage of about 1.35 displacements per atom (dpa). Tensile test results show that, although there is some reduction in tensile elongation, substantial ductility still exists after such irradiation dose which corresponds to the peak value obtained in the SINQ target for 23 days operation at 1 mA. (author) 1 fig., 2 refs.

Proton Irradiation Impacts Age Driven Modulations of Cancer Progression Influenced by Immune System Transcriptome Modifications from Splenic Tissue

Data.gov (United States)

National Aeronautics and Space Administration — Age plays a crucial role in the interplay between tumor and host; with further perturbations induced by irradiation. Proton irradiation on tumors induces biological...

Characterization of the proton irradiation induced luminescence of materials and application in radiation oncology dosimetry

Science.gov (United States)

Darafsheh, Arash; Zhang, Rongxiao; Kassaee, Alireza; Finlay, Jarod C.

2018-03-01

Visible light generated as the result of interaction of ionizing radiation with matter can be used for radiation therapy quality assurance. In this work, we characterized the visible light observed during proton irradiation of poly(methyl methacrylate) (PMMA) and silica glass fiber materials by performing luminescence spectroscopy. The spectra of the luminescence signal from PMMA and silica glass fibers during proton irradiation showed continuous spectra whose shape were different from that expected from Čerenkov radiation, indicating that Čerenkov radiation cannot be the responsible radioluminescence signal. The luminescence signal from each material showed a Bragg peak pattern and their corresponding proton ranges are in agreement with measurements performed by a standard ion chamber. The spectrum of the silica showed two peaks at 460 and 650 nm stem from the point defects of the silica: oxygen deficiency centers (ODC) and non-bridging oxygen hole centers (NBOHC), respectively. The spectrum of the PMMA fiber showed a continuous spectrum with a peak at 410 nm whose origin is connected with the fluorescence of the PMMA material. Our results are of interest for various applications based on imaging radioluminescent signal in proton therapy and will inform on the design of high-resolution fiber probes for proton therapy dosimetry.

Defect recovery in proton irradiated Ti-modified stainless steel probed by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Arunkumar, J.; Abhaya, S.; Rajaraman, R.; Amarendra, G. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102 (India); Nair, K.G.M. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102 (India)], E-mail: kgmn@igcar.gov.in; Sundar, C.S.; Raj, Baldev [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102 (India)

2009-02-28

The defect recovery in proton irradiated Ti-modified D9 steel has been studied by positron annihilation isochronal and isothermal annealing measurements. D9 samples have been irradiated with 3 MeV protons followed by isochronal annealing at various temperatures in the range of 323 to 1273 K. The dramatic decrease in positron annihilation parameters, viz. positron lifetime and Doppler S-parameter, around 500 K indicates the recovery of vacancy-defects. A clear difference in the recovery beyond 700 K is observed between solution annealed and cold worked state of D9 steel due to the precipitation of TiC in the latter. Isothermal annealing studies have been carried out at the temperature wherein vacancies distinctly migrate. Assuming a singly activated process for defect annealing, the effective activation energy for vacancy migration is estimated to be 1.13 {+-} 0.08 eV.

A study on the proton irradiation effect of reactor materials using cyclotron

International Nuclear Information System (INIS)

Chi, Se Hwan; Park, Jong Man; Park, Deuk Keun; Lee, Bong Sang; Oh, Jong Myung

1993-02-01

Understanding on radiation damage of important structural materials is important for safe operation and radiation damage evaluation of new reactor structural materials. This study was performed to simulate and evaluate 14 MeV neutron irradiation effects on mechanical properties of candidate structural materials (HT-9/SS316) of next generation reactors (FBR, Fusion) irradiated by Cyclotron(MC-50) using SP test technique. After qualification of SP test techniques from J IC and ε qf correlation, SP tests were performed to evaluate 16MeV proton irradiation effects on mechanical properties of irradiated and unirradiated HT-9/SS316 steels. Test results were evaluated for ε qf , energy and displacement up to failure and J IC change. In addition, damaged zone and dpa upon depth after irradiation were calculated using TRIM code and Doppler broadening line shapes were measured to evaluate defects for 15% cold worked HT-9 steel using PAS. (Author)

Structure modification and medical application of the natural products by proton beam irradiation

International Nuclear Information System (INIS)

Lee, D. W.; Park, J. K.; Kang, J. E.; Shin, S. C.; Ahn, J. H.; Lee, E. S.

2008-04-01

This study was performed for the investigation of changes of constituent contents of Korean ginseng (Panax genseng C.A. Meyer) after proton beam irradiation (Beam energy from MC-50 cyclotron : 36.5MeV) with beam range of 500 - 10000Gy

Structure modification and medical application of the natural products by proton beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Lee, D. W.; Park, J. K.; Kang, J. E.; Shin, S. C.; Ahn, J. H.; Lee, E. S. [Dongguk University, Gyeongju (Korea, Republic of)

2008-04-15

This study was performed for the investigation of changes of constituent contents of Korean ginseng (Panax genseng C.A. Meyer) after proton beam irradiation (Beam energy from MC-50 cyclotron : 36.5MeV) with beam range of 500 - 10000Gy

Physiologic and Radiographic Evidence of the Distal Edge of the Proton Beam in Craniospinal Irradiation

International Nuclear Information System (INIS)

Krejcarek, Stephanie C.; Grant, P. Ellen; Henson, John W.; Tarbell, Nancy J.; Yock, Torunn I.

2007-01-01

Purpose: Fatty replacement of bone marrow resulting from radiation therapy can be seen on T1-weighted magnetic resonance (MR) images. We evaluated the radiographic appearance of the vertebral bodies in children treated with proton craniospinal irradiation (CSI) to illustrate the distal edge effect of proton radiotherapy. Methods and Materials: The study cohort consisted of 13 adolescents aged 12-18 years who received CSI with proton radiotherapy at Massachusetts General Hospital. Ten of these patients had reached maximal or near-maximal growth. Proton beam radiation for these 10 patients was delivered to the thecal sac and exiting nerve roots only, whereas the remaining 3 patients had a target volume that included the thecal sac, exiting nerve roots, and entire vertebral bodies. Median CSI dose was 27 [range, 23.4-36] cobalt gray equivalent (CGE) given in 1.8-CGE fractions. Magnetic resonance images of the spine were obtained after completion of radiotherapy. Results: Magnetic resonance images of patients who received proton radiotherapy to the thecal sac only demonstrate a sharp demarcation of hyperintense T1-weighted signal in the posterior aspects of the vertebral bodies, consistent with radiation-associated fatty marrow replacement. Magnetic resonance images of the patients prescribed proton radiotherapy to the entire vertebral column had corresponding hyperintense T1-weighted signal involving the entire vertebral bodies. Conclusion: The sharp delineation of radiation-associated fatty marrow replacement in the vertebral bodies demonstrates the rapid decrease in energy at the edge of the proton beam. This provides evidence for a sharp fall-off in radiation dose and supports the premise that proton radiotherapy spares normal tissues unnecessary irradiation

Proton or photon irradiation for hemangiomas of the choroid? A retrospective comparison

International Nuclear Information System (INIS)

Hoecht, Stefan; Wachtlin, Joachim; Bechrakis, Nikolaos E.; Schaefer, Christiane; Heufelder, Jens; Cordini, Dino; Kluge, Heinz; Foerster, Michael; Hinkelbein, Wolfgang

2006-01-01

Purpose: The aim of this study was to compare, on a retrospective basis, the results of therapy in patients with uveal hemangioma treated with photon or proton irradiation at a single center. Methods and Materials: From 1993 to 2002 a total of 44 patients were treated. Until 1998 radiotherapy was given with 6 MV photons in standard fractionation of 2.0 Gy 5 times per week. In 1998 proton therapy became available and was used since then. A dose of 20 to 22.5 Cobalt Gray Equivalent (CGE) 68 MeV protons was given on 4 consecutive days. Progressive symptoms or deterioration of vision were the indications for therapy. Results: Of the 44 patients treated, 36 had circumscribed choroidal hemangiomas and 8 had diffuse choroidal hemangiomas (DCH) and Sturge-Weber syndrome. Of the patients, 19 were treated with photons with a total dose in the range of 16 to 30 Gy. A total of 25 patients were irradiated with protons. All patients with DCH but 1 were treated with photons. Stabilization of visual acuity was achieved in 93.2% of all patients. Tumor thickness decreased in 95.4% and retinal detachment resolved in 92.9%. Late effects, although generally mild or moderate, were frequently detected. In all, 40.9% showed radiation-induced optic neuropathy, maximum Grade I. Retinopathy was found in 29.5% of cases, but only 1 patient experienced more than Grade II severity. Retinopathy and radiation-induced optic neuropathy were reversible in some of the patients and in some resolved completely. No differences could be detected between patients with circumscribed choroidal hemangiomas treated with protons and photons. Treatment was less effective in DCH patients (75%). Conclusions: Radiotherapy is effective in treating choroidal hemangiomas with respect to visual acuity and tumor thickness but a benefit of proton therapy could not be detected. Side effects are moderate but careful monitoring for side effects should be part of the follow-up procedures

Characterization of ion irradiation effects on the microstructure, hardness, deformation and crack initiation behavior of austenitic stainless steel:Heavy ions vs protons

Science.gov (United States)

Gupta, J.; Hure, J.; Tanguy, B.; Laffont, L.; Lafont, M.-C.; Andrieu, E.

2018-04-01

Irradiation Assisted Stress Corrosion Cracking (IASCC) is a complex phenomenon of degradation which can have a significant influence on maintenance time and cost of core internals of a Pressurized Water Reactor (PWR). Hence, it is an issue of concern, especially in the context of lifetime extension of PWRs. Proton irradiation is generally used as a representative alternative of neutron irradiation to improve the current understanding of the mechanisms involved in IASCC. This study assesses the possibility of using heavy ions irradiation to evaluate IASCC mechanisms by comparing the irradiation induced modifications (in microstructure and mechanical properties) and cracking susceptibility of SA 304 L after both type of irradiations: Fe irradiation at 450 °C and proton irradiation at 350 °C. Irradiation-induced defects are characterized and quantified along with nano-hardness measurements, showing a correlation between irradiation hardening and density of Frank loops that is well captured by Orowan's formula. Both irradiations (iron and proton) increase the susceptibility of SA 304 L to intergranular cracking on subjection to Constant Extension Rate Tensile tests (CERT) in simulated nominal PWR primary water environment at 340 °C. For these conditions, cracking susceptibility is found to be quantitatively similar for both irradiations, despite significant differences in hardening and degree of localization.

Effects of high-energy proton irradiation on the superconducting properties of Fe(Se,Te) thin films

Science.gov (United States)

Sylva, G.; Bellingeri, E.; Ferdeghini, C.; Martinelli, A.; Pallecchi, I.; Pellegrino, L.; Putti, M.; Ghigo, G.; Gozzelino, L.; Torsello, D.; Grimaldi, G.; Leo, A.; Nigro, A.; Braccini, V.

2018-05-01

In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out an experimental investigation with different irradiation fluences up to 7.30 · 1016 cm‑2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradiation on the critical temperature, resistivity, and critical magnetic fields, and finally what is the role played by the substrate in this context. We find that the effect of irradiation on superconducting properties is generally small compared to the case of other iron-based superconductors. The irradiation effect is more evident on the critical current density Jc, while it is minor on the transition temperature Tc, normal state resistivity ρ, and on the upper critical field Hc2 up to the highest fluences explored in this work. In more detail, our analysis shows that when protons implant in the substrate far from the superconducting film, the critical current can be enhanced up to 50% of the pristine value at 7 T and 12 K; meanwhile, there is no appreciable effect on critical temperature and critical fields together with a slight decrease in resistivity. On the contrary, when the implantation layer is closer to the film–substrate interface, both critical current and temperature show a decrease accompanied by an enhancement of the resistivity and lattice strain. This result evidences that possible modifications induced by irradiation in the substrate may affect the superconducting properties of the film via lattice strain. The robustness of the Fe(Se,Te) system to irradiation-induced damage makes it a promising compound for the fabrication of magnets in high-energy accelerators.

MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

Science.gov (United States)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

Accelerated partial-breast irradiation using proton beams: Initial clinical experience

International Nuclear Information System (INIS)

Kozak, Kevin R.; Smith, Barbara L.; Adams, Judith C.; Kornmehl, Ellen; Katz, Angela; Gadd, Michele; Specht, Michelle; Hughes, Kevin; Gioioso, Valeria; Lu, H.-M.; Braaten, Kristina; Recht, Abram; Powell, Simon N.; DeLaney, Thomas F.; Taghian, Alphonse G.

2006-01-01

Purpose: We present our initial clinical experience with proton, three-dimensional, conformal, external beam, partial-breast irradiation (3D-CPBI). Methods and Materials: Twenty patients with Stage I breast cancer were treated with proton 3D-CPBI in a Phase I/II clinical trial. Patients were followed at 3 to 4 weeks, 6 to 8 weeks, 6 months, and every 6 months thereafter for recurrent disease, cosmetic outcome, toxicity, and patient satisfaction. Results: With a median follow-up of 12 months (range, 8-22 months), no recurrent disease has been detected. Global breast cosmesis was judged by physicians to be good or excellent in 89% and 100% of cases at 6 months and 12 months, respectively. Patients rated global breast cosmesis as good or excellent in 100% of cases at both 6 and 12 months. Proton 3D-CPBI produced significant acute skin toxicity with moderate to severe skin color changes in 79% of patients at 3 to 4 weeks and moderate to severe moist desquamation in 22% of patients at 6 to 8 weeks. Telangiectasia was noted in 3 patients. Three patients reported rib tenderness in the treated area, and one rib fracture was documented. At last follow-up, 95% of patients reported total satisfaction with proton 3D-CPBI. Conclusions: Based on our study results, proton 3D-CPBI offers good-to-excellent cosmetic outcomes in 89% to 100% of patients at 6-month and 12-month follow-up and nearly universal patient satisfaction. However, proton 3D-CPBI, as used in this study, does result in significant acute skin toxicity and may potentially be associated with late skin (telangiectasia) and rib toxicity. Because of the dosimetric advantages of proton 3D-CPBI, technique modifications are being explored to improve acute skin tolerance

Laser polarization dependence of proton emission from a thin foil target irradiated by a 70 fs, intense laser pulse

International Nuclear Information System (INIS)

Fukumi, A.; Nishiuchi, M.; Daido, H.; Li, Z.; Sagisaka, A.; Ogura, K.; Orimo, S.; Kado, M.; Hayashi, Y.; Mori, M.; Bulanov, S.V.; Esirkepov, T.; Nemoto, K.; Oishi, Y.; Nayuki, T.; Fujii, T.; Noda, A.; Nakamura, S.

2005-01-01

A study of proton emission from a 3-μm-thick Ta foil target irradiated by p-, s-, and circularly polarized laser pulses with respect to the target plane has been carried out. Protons with energies up to 880 keV were observed in the target normal direction under the irradiation by the p-polarized laser pulse, which yielded the highest efficiency for proton emission. In contrast, s- and circularly polarized laser pulses gave the maximum energies of 610 and 680 keV, respectively. The difference in the maximum energy between the p- and s-polarized cases was associated with the difference between the sheath fields estimated from electron spectra

Effect of proton and gamma irradiation on human lung carcinoma cells: Gene expression, cell cycle, cell death, epithelial–mesenchymal transition and cancer-stem cell trait as biological end points

Energy Technology Data Exchange (ETDEWEB)

Narang, Himanshi, E-mail: narangh@barc.gov.in [Radiation Biology and Health Sciences Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Amit [Radiation Biology and Health Sciences Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Bhat, Nagesh [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Pandey, Badri N.; Ghosh, Anu [Radiation Biology and Health Sciences Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2015-10-15

Highlights: • Biological effectiveness of proton and gamma irradiation is compared in A549 cells. • Proton irradiation is two times more cytotoxic than gamma irradiation. • It alters ten times more number of early genes, as observed by microarray study. • It does not enhance cell migration, invasion and adhesion, unlike gamma irradiation. • It was more effective in reducing the percentage of cancer stem cell like cells. - Abstract: Proton beam therapy is a cutting edge modality over conventional gamma radiotherapy because of its physical dose deposition advantage. However, not much is known about its biological effects vis-a-vis gamma irradiation. Here we investigated the effect of proton- and gamma- irradiation on cell cycle, death, epithelial-mesenchymal transition (EMT) and “stemness” in human non-small cell lung carcinoma cells (A549). Proton beam (3 MeV) was two times more cytotoxic than gamma radiation and induced higher and longer cell cycle arrest. At equivalent doses, numbers of genes responsive to proton irradiation were ten times higher than those responsive to gamma irradiation. At equitoxic doses, the proton-irradiated cells had reduced cell adhesion and migration ability as compared to the gamma-irradiated cells. It was also more effective in reducing population of Cancer Stem Cell (CSC) like cells as revealed by aldehyde dehydrogenase activity and surface phenotyping by CD44{sup +}, a CSC marker. These results can have significant implications for proton therapy in the context of suppression of molecular and cellular processes that are fundamental to tumor expansion.

THz laser based on quasi-periodic AlGaAs superlattices

Energy Technology Data Exchange (ETDEWEB)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Effects of proton irradiation on structure of NdFeB permanent magnets studied by X-ray diffraction and X-ray absorption fine structure

International Nuclear Information System (INIS)

Yang, L.; Zhen, L.; Xu, C.Y.; Sun, X.Y.; Shao, W.Z.

2011-01-01

The effects of proton irradiation on the structure of NdFeB permanent magnet were investigated by X-ray diffraction and X-ray absorption fine structure (XAFS). The results reveal that proton irradiation has no effect on the long-range structure, but significantly affects the atomic local structure of the NdFeB magnet. The alignment degree of the magnet decreases and the internal stress of the lattice increases after proton irradiation. XAFS results show that the coordination number of Fe-Nd in the first neighboring coordination shell of the Fe atoms decreases and the disorder degree increases.

Effects of proton irradiation on structure of NdFeB permanent magnets studied by X-ray diffraction and X-ray absorption fine structure

Energy Technology Data Exchange (ETDEWEB)

Yang, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, L., E-mail: lzhen@hit.edu.c [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xu, C.Y.; Sun, X.Y.; Shao, W.Z. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2011-01-15

The effects of proton irradiation on the structure of NdFeB permanent magnet were investigated by X-ray diffraction and X-ray absorption fine structure (XAFS). The results reveal that proton irradiation has no effect on the long-range structure, but significantly affects the atomic local structure of the NdFeB magnet. The alignment degree of the magnet decreases and the internal stress of the lattice increases after proton irradiation. XAFS results show that the coordination number of Fe-Nd in the first neighboring coordination shell of the Fe atoms decreases and the disorder degree increases.

Establishing Cost-Effective Allocation of Proton Therapy for Breast Irradiation

International Nuclear Information System (INIS)

Mailhot Vega, Raymond B.; Ishaq, Omar; Raldow, Ann; Perez, Carmen A.; Jimenez, Rachel; Scherrer-Crosbie, Marielle; Bussiere, Marc; Taghian, Alphonse; Sher, David J.; MacDonald, Shannon M.

2016-01-01

Purpose: Cardiac toxicity due to conventional breast radiation therapy (RT) has been extensively reported, and it affects both the life expectancy and quality of life of affected women. Given the favorable oncologic outcomes in most women irradiated for breast cancer, it is increasingly paramount to minimize treatment side effects and improve survivorship for these patients. Proton RT offers promise in limiting heart dose, but the modality is costly and access is limited. Using cost-effectiveness analysis, we provide a decision-making tool to help determine which breast cancer patients may benefit from proton RT referral. Methods and Materials: A Markov cohort model was constructed to compare the cost-effectiveness of proton versus photon RT for breast cancer management. The model was analyzed for different strata of women based on age (40 years, 50 years, and 60 years) and the presence or lack of cardiac risk factors (CRFs). Model entrants could have 1 of 3 health states: healthy, alive with coronary heart disease (CHD), or dead. Base-case analysis assumed CHD was managed medically. No difference in tumor control was assumed between arms. Probabilistic sensitivity analysis was performed to test model robustness and the influence of including catheterization as a downstream possibility within the health state of CHD. Results: Proton RT was not cost-effective in women without CRFs or a mean heart dose (MHD) <5 Gy. Base-case analysis noted cost-effectiveness for proton RT in women with ≥1 CRF at an approximate minimum MHD of 6 Gy with a willingness-to-pay threshold of $100,000/quality-adjusted life-year. For women with ≥1 CRF, probabilistic sensitivity analysis noted the preference of proton RT for an MHD ≥5 Gy with a similar willingness-to-pay threshold. Conclusions: Despite the cost of treatment, scenarios do exist whereby proton therapy is cost-effective. Referral for proton therapy may be cost-effective for patients with ≥1 CRF in cases for which

Establishing Cost-Effective Allocation of Proton Therapy for Breast Irradiation

Energy Technology Data Exchange (ETDEWEB)

Mailhot Vega, Raymond B.; Ishaq, Omar [Department of Radiation Oncology, NYU School of Medicine, New York, New York (United States); Raldow, Ann [Radiation Oncology Program, Harvard University, Boston, Massachusetts (United States); Perez, Carmen A. [Department of Radiation Oncology, NYU School of Medicine, New York, New York (United States); Jimenez, Rachel [Department of Radiation Oncology, Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts (United States); Scherrer-Crosbie, Marielle [Cardiovascular Research Center, Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts (United States); Bussiere, Marc; Taghian, Alphonse [Department of Radiation Oncology, Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts (United States); Sher, David J. [Department of Radiation Oncology, University of Texas Southwestern Medical Center, San Antonio, Texas (United States); MacDonald, Shannon M., E-mail: smacdonald@partners.org [Department of Radiation Oncology, Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts (United States)

2016-05-01

Purpose: Cardiac toxicity due to conventional breast radiation therapy (RT) has been extensively reported, and it affects both the life expectancy and quality of life of affected women. Given the favorable oncologic outcomes in most women irradiated for breast cancer, it is increasingly paramount to minimize treatment side effects and improve survivorship for these patients. Proton RT offers promise in limiting heart dose, but the modality is costly and access is limited. Using cost-effectiveness analysis, we provide a decision-making tool to help determine which breast cancer patients may benefit from proton RT referral. Methods and Materials: A Markov cohort model was constructed to compare the cost-effectiveness of proton versus photon RT for breast cancer management. The model was analyzed for different strata of women based on age (40 years, 50 years, and 60 years) and the presence or lack of cardiac risk factors (CRFs). Model entrants could have 1 of 3 health states: healthy, alive with coronary heart disease (CHD), or dead. Base-case analysis assumed CHD was managed medically. No difference in tumor control was assumed between arms. Probabilistic sensitivity analysis was performed to test model robustness and the influence of including catheterization as a downstream possibility within the health state of CHD. Results: Proton RT was not cost-effective in women without CRFs or a mean heart dose (MHD) <5 Gy. Base-case analysis noted cost-effectiveness for proton RT in women with ≥1 CRF at an approximate minimum MHD of 6 Gy with a willingness-to-pay threshold of $100,000/quality-adjusted life-year. For women with ≥1 CRF, probabilistic sensitivity analysis noted the preference of proton RT for an MHD ≥5 Gy with a similar willingness-to-pay threshold. Conclusions: Despite the cost of treatment, scenarios do exist whereby proton therapy is cost-effective. Referral for proton therapy may be cost-effective for patients with ≥1 CRF in cases for which

Investigations of ultrafast charge dynamics in laser-irradiated targets by a self probing technique employing laser driven protons

Energy Technology Data Exchange (ETDEWEB)

Ahmed, H. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Kar, S., E-mail: s.kar@qub.ac.uk [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Cantono, G. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Department of Physics “E. Fermi”, Largo B. Pontecorvo 3, 56127 Pisa (Italy); Consiglio Nazionale delle Ricerche, Istituto Nazionale di Ottica, Research Unit Adriano Gozzini, via G. Moruzzi 1, Pisa 56124 (Italy); Nersisyan, G. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Brauckmann, S. [Institut für Laser-und Plasmaphysik, Heinrich-Heine-Universität, Düsseldorf (Germany); Doria, D.; Gwynne, D. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Macchi, A. [Department of Physics “E. Fermi”, Largo B. Pontecorvo 3, 56127 Pisa (Italy); Consiglio Nazionale delle Ricerche, Istituto Nazionale di Ottica, Research Unit Adriano Gozzini, via G. Moruzzi 1, Pisa 56124 (Italy); Naughton, K. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Willi, O. [Institut für Laser-und Plasmaphysik, Heinrich-Heine-Universität, Düsseldorf (Germany); Lewis, C.L.S.; Borghesi, M. [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom)

2016-09-01

The divergent and broadband proton beams produced by the target normal sheath acceleration mechanism provide the unique opportunity to probe, in a point-projection imaging scheme, the dynamics of the transient electric and magnetic fields produced during laser-plasma interactions. Commonly such experimental setup entails two intense laser beams, where the interaction produced by one beam is probed with the protons produced by the second. We present here experimental studies of the ultra-fast charge dynamics along a wire connected to laser irradiated target carried out by employing a ‘self’ proton probing arrangement – i.e. by connecting the wire to the target generating the probe protons. The experimental data shows that an electromagnetic pulse carrying a significant amount of charge is launched along the wire, which travels as a unified pulse of 10s of ps duration with a velocity close to speed of light. The experimental capabilities and the analysis procedure of this specific type of proton probing technique are discussed. - Highlights: • Prompt charging of laser irradiated target generates ultra-short EM pulses. • Its ultrafast propagation along a wire was studied by self-proton probing technique. • Self-proton probing technique is the proton probing with one laser pulse. • Pulse temporal profile and speed along the wire were measured with high resolution.

A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Anjum, Arshiya; Vinayakprasanna, N.H.; Pradeep, T.M. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore 570025 (India); Krishna, J.B.M. [IUC-DAE CSR, Kolkota 700098 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2016-07-15

N-channel depletion MOSFETs were irradiated with 4 MeV Proton and Co-60 gamma radiation in the dose range of 100 krad(Si) to 100 Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (V{sub th}), density of interface trapped charges (ΔN{sub it}), density of oxide trapped charges (ΔN{sub ot}), transconductance (g{sub m}), mobility (μ), leakage current (I{sub L}) and drain saturation current (I{sub D} {sub Sat}) were studied as a function of dose. A considerable increase in ΔN{sub it} and ΔN{sub ot} and decrease in V{sub th,}g{sub m}, μ, and I{sub D} {sub Sat} was observed after irradiation. The results of 4 MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4 MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation.

Point defects in GaAs and other semiconductors

International Nuclear Information System (INIS)

Ehrhart, P.; Karsten, K.; Pillukat, A.

1993-01-01

In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

International Nuclear Information System (INIS)

Kumar, Sanjiv; Raju, V.S.

2004-01-01

This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14 N(α,α) 14 N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28 Si(p,p) 28 Si and 14 N(p,p) 14 N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1 H( 19 F,αγ) 16 O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si 1-(x+y) N x H y films

Proton permeability of membranes of Streptococcus faecalis and submitochondrial particles of rats after irradiation

International Nuclear Information System (INIS)

Fomenko, B.S.; Pinchukova, V.A.

1977-01-01

It has been shown that at a changed, by HCl impulse, pH of Streptococcus faecalis suspension and submitochondrial liver particles (SLP) of rats, H + concentration decreases more rapidly in the irradiated bacteria and SLP than in the controls. The curves of energy dependence of accumulation of the penetrating ions were also displaced toward the alkaline zone depending on pH. These effects are suggested to be connected with an increased proton permeability of irradiated membranes

Sorption technique of separation of thallium-201 from proton-irradiated thallium

International Nuclear Information System (INIS)

Deptula, Cz.; Zajtseva, N.G.; Mikolaevskij, S.; Khalkin, V.A.

1989-01-01

A sorption technique is developed for radiochemical separation of thallium-201 from proton-irradiated targets of metallic thallium. The technique consists in separation of 201 Pb and 201 Tl in the column with ammonium 12-molybdophosphate fixed in the matrix of porous Teflon (AMP-sorbent). The chemical yield of radiothallium is 98 %, the duration of chemical procedures is 2.5-3 hours. 21 refs.; 1 fig.; 1 tab

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Recovery of hafnium radioisotopes from a proton irradiated tantalum target

International Nuclear Information System (INIS)

Taylor, W.A.; Garcia, J.G.; Hamilton, V.T.; Heaton, R.C.; Jamriska, D.J.; Ott, M.A.; Philips, D.R.; Radzinski, S.D.

1998-01-01

The 178m2 Hf nucleus, with its long half-life (31 y) and high-spin isomeric state (16 + ) is desired for new and exotic nuclear physics studies. The Los Alamos Radioisotope Program irradiated a kilogram of natural tantalum at the Los Alamos Meson Physics Facility in early 1981. After fifteen years of decay, this target was ideal for the recovery of 178m2 Hf. There was more than a millicurie of 178m2 Hf produced during this irradiation and there has been a sufficient period of time for most of the other hafnium radioisotopes to decayed away. Traditionally, separation techniques for recovering hafnium isotopes from tantalum targets employ solvent extractions with reagents that are considered hazardous. These techniques are no longer condoned because they generate a mixed-waste (radioactive and hazardous components) that can not be treated for disposal. In this paper we describe a new and unique procedure for the recovery of hafnium radioisotopes from a highly radioactive, proton irradiated, tantalum target using reagents that do not contribute a hazardous waste component. (author)

Radiosensitizing effect of nitric oxide in tumor cells and experimental tumors irradiated with gamma rays and proton beams; Efecto radiosensibilizador del oxido nitrico en celulas tumorales y en tumores experimentales irradiados con radiacion gamma y con haces de protones

Energy Technology Data Exchange (ETDEWEB)

Policastro, Lucia L; Duran, Hebe; Molinari, Beatriz L [Comision Nacional de Energia Atomica, General San Martin (Argentina). Dept. de Radiobiologia; Schuff, Juan A; Kreiner, Andres J; Burlon, Alejandro A; Debray, Mario E; Kesque, Jose M; Ozafran, Mabel J; Vazquez, Monica E [Comision Nacional de Energia Atomica, General San Martin (Argentina). Dept. de Fisica; Davidson, Jorge; Davidson, Miguel [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET), Buenos Aires (Argentina); Somacal, Hector R; Valda, Alejandro A [Universidad Nacional de General San Martin , Villa Ballester (Argentina). Escuela de Ciencia y Tecnologia

2003-07-01

Nitric oxide (NO) has been reported to be a radiosensitizer of mammalian cells under hypoxic conditions. In a previous study, we demonstrated an enhancement in radiation response induced by NO in mouse tumor cells under aerobic conditions, with an increasing effect as a function of malignancy. The aim of the present study was to evaluate the effect of NO in tumor cells and in experimental tumors irradiated with {gamma} rays and proton beams. Irradiations were performed with a {sup 137}Cs {gamma} source and with proton beams generated by the TANDAR accelerator. Tumor cells were treated with the NO donor DETA-NO and the sensitizer enhancement ratio (SER) was calculated using the {alpha} parameter of the survival curve fitted to the linear-quadratic model. Tumor cells irradiated with protons were radio sensitized by DETA-NO only in the more malignant cells irradiated with low LET protons (2.69{+-}0.08 keV/{mu}m). For higher LET protons there were no radiosensitizing effect. For human tumor cells pre-treated with DETA-NO and irradiated with {gamma} rays, a significantly greater effect was demonstrated in the malignant cells (MCF-7) as compared with the near normal cells (HBL-100). Moreover, a significant decrease in tumor growth was demonstrated in mice pre-treated with the NO donor spermine and irradiated with {gamma} rays and low LET protons as compared with mice irradiated without pre-treatment with the NO donor. In conclusion, we demonstrated a differential effect of NO as a radiosensitizer of malignant cells, both with {gamma} rays and low LET protons. This selectivity, coupled to the in vivo inhibition of tumor growth, is of great interest for the potential use of NO releasing agents in radiotherapy. (author)

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

Peltola, Timo Hannu Tapani

2014-01-01

A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers

Science.gov (United States)

Zhang, Xingyao; Li, Yudong; Guo, Qi; Feng, Jie

2018-03-01

InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.

Influence of proton irradiation on the photochromism

International Nuclear Information System (INIS)

Lee, I. J.; Kim, D. E.; Kang, T. W.; Kim, N. Y.

2008-04-01

The objectives of this study are to extend our knowledge on the radiochromic reaction mechanism of photochromic compounds and to accumulate the basic data needed for the development of a low-cost radiochromic film dosimeter. The characteristics of the radiochromic reaction of SPO, were studied by UV-Vis and chromatographic methods. The results of the radiochromic reaction was compared with the effects of UV light on photochromic reaction of SPO. The basic data for selecting the proper materials and conditions were also obtained. Upon the proton irradiation, SPO decomposes into two chemicals (1 and 2). 1 is contains indoline group and 2 contains phenanthrene group. 2 absorbs at 480 nm and has acidic character. By the UV irradiation, SPO also decomposes to give the same products as the radiochromic reaction. Depending on the solvent trans-PMC·HCl or cis-PMC·HCl complex was produced upon the addition of HCl on SPO solution and two complexes seemed to be unstable in a given condition. It seems that 1x10 -3 M SPO/ethanol solution is very suitable system for the radiochromic dosimeter in the fluence range of 8x10 11 ∼ 2x10 13 ions/cm 2 . SPO/acetonitrile and SPO/PS system were also good candidates for the dosimeter application.

A coupled RL and transport model for mixed-field proton irradiation of Al2O3:C

DEFF Research Database (Denmark)

Greilich, Steffen; Edmund, Jens Morgenthaler; Jain, Mayank

2008-01-01

effects and inelastic hadronic scattering occur in proton therapy dosimetry. To investigate these aspects in relation to our system, we have combined simulation of particle transportation with a luminescence generation code based on track structure theory. The model was found to qualitatively reproduce...... the main features in experimental data from proton irradiations. (c) 2008 Elsevier Ltd. All rights reserved....

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Low-temperature positron-lifetime studies of proton-irradiated silicon

DEFF Research Database (Denmark)

Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

1990-01-01

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

International Nuclear Information System (INIS)

Zhao Huijie; Wu Yiyong; Xiao Jingdong; He Shiyu; Yang Dezhuang; Sun Yanzheng; Sun Qiang; Lv Wei; Xiao Zhibin; Huang Caiyong

2008-01-01

Displacement damage induced by charged particle radiation is the main cause of degradation of orbital-service solar cells, while the radiation-induced ionization shows no permanent damage effect on their electrical properties. It is reported that in single crystal silicon solar cells, low-energy electron radiation does not exert permanent degradation of their properties, but the fluence of electron radiation exerts an influence on the damage magnitude under the combined radiation of protons and electrons. The electrical properties of the single-junction GaAs/Ge solar cells were investigated after irradiation by sequential and synchronous electron and proton beams. Low-energy electron radiation showed no effects on the change of the solar cell properties during sequential or synchronous irradiation, implying ionization during particle radiation could not exert influence on the displacement damage process to the solar cells under the experimental conditions

Biological Effects of Neutron and Proton Irradiations. Vol. II. Proceedings of the Symposium on Biological Effects of Neutron Irradiations

International Nuclear Information System (INIS)

1964-01-01

During recent years the interest in biological effects caused by neutrons has been increasing steadily as a result of the rapid development of neutron technology and the great number of neutron sources being used. Neutrons, because of their specific physical characteristics and biological effects, form a special type of radiation hazard but, at the same time, are a prospective tool for applied radiobiology. This Symposium, held in Brookhaven at the invitation of the United States Government from 7-11 October 1963, provided an opportunity for scientists to discuss the experimental information at present available on the biological action of neutrons and to evaluate future possibilities. It was a sequel to the Symposium on Neutron Detection, Dosimetry and Standardization, which was organized by the International Atomic Energy Agency in December 1962 at Harwell. The Symposium was attended by 128 participants from 17 countries and 6 international organizations. Fifty-four papers were presented. The following subjects were discussed in various sessions: (1) Dosimetry. Estimation of absorbed dose of neutrons in biological material. (2) Biological effects of high-energy protons. (3) Cellular and genetic effects. (4) Pathology of neutron irradiation, including acute and chronic radiation syndromes (mortality, anatomical and histological changes, biochemical and metabolic disturbances) and delayed consequences. (5) Relative biological effectiveness of neutrons evaluated by different biological tests. A Panel on Biophysical Considerations in Neutron Experimentation, with special emphasis on informal discussions, was organized during the Symposium. The views of the Panel are recorded in Volume II of the Proceedings. Many reports were presented on the important subject of the relative effectiveness of the biological action of neutrons, as well as on the general pathology of neutron irradiation and the cellular and genetic effects related to it. Three survey papers considered

Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

International Nuclear Information System (INIS)

Kishimoto, N.; Amekura, H.; Plaksin, O.A.; Stepanov, V.A.

2000-01-01

The opto-electronic performance of semiconductors during reactor operation is restricted by radiation-induced conductivity (RIC) and the synergistic effects of neutrons/ions and photons. The RICs of Si due to photons, protons and pulsed neutrons have been evaluated, aiming at radiation correlation. Protons of 17 MeV with an ionizing dose rate of 10 3 Gy/s and/or photons (hν=1.3 eV) were used to irradiate impurity-doped Si (2x10 16 B atoms/cm 3 ) at 300 and 200 K. Proton-induced RIC (p-RIC) and photoconductivity (PC) were intermittently detected in an accelerator device. Neutron-induced RIC (n-RIC) was measured for the same Si in a pulsed fast-fission reactor, BARS-6, with a 70-μs pulse of 2x10 12 n/cm 2 (E>0.01 MeV) and a dose rate of up to 6x10 5 Gy/s. The neutron irradiation showed a saturation tendency in the flux dependence at 300 K due to the strong electronic excitation. Normalization of the electronic excitation, including the pulsed regime, gave a fair agreement among the different radiation environments. Detailed comparison among PC, p-RIC and n-RIC is discussed in terms of radiation correlation including the in-pile condition

Mechanical properties and microstructures of copper, gold and palladium single crystals irradiated with 600 MeV protons

International Nuclear Information System (INIS)

Dai Yong.

1995-01-01

In the present work, the defect microstructures and hardening effects produced by 600 MeV proton irradiation in Cu, Pd and Au single crystals have been studied at room temperature. The defect microstructures in the irradiated Cu have been investigated by using transmission electron microscopy (TEM) in a dose range from 9.7x10 -4 to 4.6x10 -2 dpa. It has been observed that about 90% of the total defect clusters are stacking fault tetrahedra (SFT's). This fraction is independent of the thickness of the foil up to about 130 nm. The irradiation defect cluster densities obtained are in agreement with previous published results of high energy proton irradiation. With the present data at medium doses, the dose dependence of the defect cluster density, in high energy proton irradiated Cu, has been well established. A comparison between the results of Cu irradiated with high energy protons, fusion neutrons and fission neutrons indicates that there is no difference in defect cluster densities produced by these particle irradiations when the results are compared on the basis of dpa. The data compiled can be fitted within a band which shows that the defect cluster density starts to saturate at a value of about 4x10 23 m -3 . A large transition dose range between the linear dependence to the saturation is located between 3x10 -3 and 1x10 -1 dpa. The defect cluster size distribution measured under weak beam dark field (WBDF) imaging conditions with (g,6g) (WBDF(g,6g)), g=200, shows that the most probable size is between 1.5 and 2 nm and the mean size is about 2 nm independent of the dose. This result is also in agreement with published results. The defect structure in Au at dose of 1.1x10 -1 dpa has been observed. It shows that about 85% of the total defect clusters are SFT's. There are no grouped defect clusters, which may probably be due to the fact that the defect cluster density (5.1x10 23 ) has already saturated at this high dose. The most probable defect cluster size is

ion irradiation

Indian Academy of Sciences (India)

Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

Science.gov (United States)

Brucker, G. J.; Van Gunten, O.; Stassinopoulos, E. G.; Shapiro, P.; August, L. S.; Jordan, T. M.

1983-01-01

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Mechanical-property changes of structural composite materials after low-temperature proton irradiation: Implications for use in SSC magnet systems

International Nuclear Information System (INIS)

Morena, J.; Snead, C.L. Jr.; Czajkowski, C.; Skaritka, J.

1993-01-01

Longterm physical, mechanical, electrical, and other properties of advanced composites, plastics, and other polymer materials are greatly affected by high-energy proton, neutron, electron, and gamma radiation. The effects of high-energy particles on materials is a critical design parameter to consider when choosing polymeric structural, nonstructural, and elastomeric matrix resin systems. Polymer materials used for filled resins, laminates, seals, gaskets, coatings, insulation and other nonmetallic components must be chosen carefully, and reference data viewed with caution. Most reference data collected in the high-energy physics community to date reflects material property degradation using other than proton irradiations. In most instances, the data were collected for room-temperature irradiations, not 4.2 K or other cryogenic temperatures, and at doses less than 10 8 --10 9 Rad. Energetic proton (and the accompanying spallation-product particles) provide good simulation fidelity to the expected radiation fields predicted for the cold-mass regions of the SSC magnets, especially the corrector magnets. The authors present here results for some structural composite materials which were part of a larger irradiation-characterization of polymeric materials for SSC applications

Hydrogen release from 800 MeV proton-irradiated tungsten

Science.gov (United States)

Oliver, B. M.; Venhaus, T. J.; Causey, R. A.; Garner, F. A.; Maloy, S. A.

2002-12-01

Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ˜300 to ˜1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of ˜7%. There is a small additional release fraction occurring at ˜550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model.

Hydrogen release from 800 MeV proton-irradiated tungsten

International Nuclear Information System (INIS)

Oliver, B.M.; Venhaus, T.J.; Causey, R.A.; Garner, F.A.; Maloy, S.A.

2002-01-01

Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from ∼300 to ∼1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of ∼7%. There is a small additional release fraction occurring at ∼550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model

Hydrogen release from 800 MeV proton-irradiated tungsten

Energy Technology Data Exchange (ETDEWEB)

Oliver, B.M. E-mail: brian.oliver@pnl.gov; Venhaus, T.J.; Causey, R.A.; Garner, F.A.; Maloy, S.A

2002-12-01

Tungsten irradiated in spallation neutron sources, such as those proposed for the accelerator production of tritium (APT) project, will contain large quantities of generated helium and hydrogen gas. Tungsten used in proposed fusion reactors will also be exposed to neutrons, and the generated protium will be accompanied by deuterium and tritium diffusing in from the plasma-facing surface. The release kinetics of these gases during various off-normal scenarios involving loss of coolant and after heat-induced rises in temperature are of particular interest for both applications. To determine the release kinetics of hydrogen from tungsten, tungsten rods irradiated with 800 MeV protons in the Los Alamos Neutron Science Center (LANSCE) to high exposures as part of the APT project have been examined. Hydrogen evolution from the tungsten has been measured using a dedicated mass-spectrometer system by subjecting the specimens to an essentially linear temperature ramp from {approx}300 to {approx}1500 K. Release profiles are compared with predictions obtained using the Tritium Migration Analysis Program (TMAP4). The measurements show that for high proton doses, the majority of the hydrogen is released gradually, starting at about 900 K and reaching a maximum at about 1400 K, where it drops fairly rapidly. Comparisons with TMAP show quite reasonable agreement using a trap energy of 1.4 eV and a trap density of {approx}7%. There is a small additional release fraction occurring at {approx}550 K, which is believed to be associated with low-energy trapping at or near the surface, and, therefore, was not included in the bulk TMAP model.

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

International Nuclear Information System (INIS)

Desalvo, G.C.; Mueller, E.H.; Barnett, A.M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

Proton and gamma -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18-mu{{m}} CMOS Image Sensor

Science.gov (United States)

Martin, E.; Nuns, T.; Virmontois, C.; David, J.-P.; Gilard, O.

2013-08-01

The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-μm COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage effects. The influence of the proton energy, fluence, ionizing dose and applied bias during irradiation on the number of RTS pixels, the number of discrete levels, maximum transition amplitude, and mean switching time constants is investigated.

Proposal for an irradiation facility at the TAEK SANAEM Proton Accelerator Facility

Science.gov (United States)

Demirköz, B.; Gencer, A.; Kiziloren, D.; Apsimon, R.

2013-12-01

Turkish Atomic Energy Authority's (TAEK's) Proton Accelerator Facility in Ankara, Turkey, has been inaugurated in May 2012 and is under the process of being certified for commercial radio-isotope production. Three of the four arms of the 30 MeV cyclotron are being used for radio-isotope production, while the fourth is foreseen for research and development of novel ideas and methods. The cyclotron can vary the beam current between 12 μA and 1.2 mA, sufficient for irradiation tests for semiconductor materials, detectors and devices. We propose to build an irradiation facility in the R&D room of this complex, open for use to the international detector development community.

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

CERN Document Server

La Rosa, A; Cobal, M; Betta, G -F Dalla; Da Via, C; Darbo, G; Gallrapp, C; Gemme, C; Huegging, F; Janssen, J; Micelli, A; Pernegger, H; Povoli, M; Wermes, N; Zorzi, N

2012-01-01

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

Damage evaluation of proton irradiated titanium deuteride thin films to be used as neutron production targets

Science.gov (United States)

Suarez Anzorena, Manuel; Bertolo, Alma A.; Gagetti, Leonardo; Gaviola, Pedro A.; del Grosso, Mariela F.; Kreiner, Andrés J.

2018-06-01

Titanium deuteride thin films have been manufactured under different conditions specified by deuterium gas pressure, substrate temperature and time. The films were characterized by different techniques to evaluate the deuterium content and the homogeneity of such films. Samples with different concentrations of deuterium, including non deuterated samples, were irradiated with a 150 keV proton beam. Both deposits, pristine and irradiated, were characterized by optical profilometry and scanning electron microscopy.

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

Void formation in cold-worked type 316 stainless steel irradiated with 1-MeV protons

International Nuclear Information System (INIS)

Keefer, D.W.; Pard, A.G.

1974-01-01

Cold-worked Type 316 stainless steel was irradiated at 500 and 600 0 C with 1-MeV protons. The dependence of void formation on displacement damage, irradiation temperature, and microstructure was studied by transmission electron microscopy. Cold working delays the onset of swelling and reduces it, via a reduction in void size, at both irradiation temperatures. Inhomogeneity in the cold-worked microstructure leads to inhomogeneity in the disposition of voids. Swelling at 600 is greater than at 500 0 C; the voids are less numerous but larger at the higher temperature. No change in the cold-worked microstructure can be detected by transmission electron microscopy after 500 0 C irradiation to 23 displacements per atom. Irradiation to a comparable damage level at 600 0 C results in almost complete elimination of the cold-worked microstructure. Comparison of the results is made with data from reactor irradiation experiments

Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

Energy Technology Data Exchange (ETDEWEB)

Obernhuber, S.

2007-04-15

For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

Irradiation effects in beryllium exposed to high energy protons of the NuMI neutrino source

Energy Technology Data Exchange (ETDEWEB)

Kuksenko, V., E-mail: viacheslav.kuksenko@materials.ox.ac.uk [University of Oxford, Oxford (United Kingdom); Ammigan, K.; Hartsell, B. [Fermi National Accelerator Laboratory, Batavia (United States); Densham, C. [Rutherford Appleton Laboratory, Didcot (United Kingdom); Hurh, P. [Fermi National Accelerator Laboratory, Batavia (United States); Roberts, S. [University of Oxford, Oxford (United Kingdom)

2017-07-15

A beryllium primary vacuum-to-air beam ‘window’ of the 'Neutrinos at the Main Injector' (NuMI) beamline at Fermi National Accelerator Laboratory (Fermilab), Batavia, Illinois, USA, has been irradiated by 120 GeV protons over 7 years, with a maximum integrated fluence at the window centre of 2.06 10{sup 22} p/cm{sup 2} corresponding to a radiation damage level of 0.48 dpa. The proton beam is pulsed at 0.5 Hz leading to an instantaneous temperature rise of 40 °C per pulse. The window is cooled by natural convection and is estimated to operate at an average of around 50 °C. The microstructure of this irradiated material was investigated by SEM/EBSD and Atom Probe Tomography, and compared to that of unirradiated regions of the beam window and that of stock material of the same PF-60 grade. Microstructural investigations revealed a highly inhomogeneous distribution of impurity elements in both unirradiated and irradiated conditions. Impurities were mainly localised in precipitates, and as segregations at grain boundary and dislocation lines. Low levels of Fe, Cu, Ni, C and O were also found to be homogeneously distributed in the beryllium matrix. In the irradiated materials, up to 440 appm of Li, derived from transmutation of beryllium was homogeneously distributed in solution in the beryllium matrix.

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

International Nuclear Information System (INIS)

Shcherbachev, Kirill; Bailey, Melanie J.

2011-01-01

An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Studies on the preparation of thallium-201 by irradiating mercury with protons using extraction chromatography technique to separate thallium from mercury

International Nuclear Information System (INIS)

Fernandes, L.

1990-01-01

Radionuclide sup(201)Tl is used in Nuclear Medicine to identify myocardial ischemia or myocardial infarct. It is a cyclotron-produced radioisotope, obtained indirectly from the decay of sup(202)Pb or directly by irradiating mercury with deuterons or protons. The usual technique to prepare sup(201)Tl makes use of the nuclear reaction: sup(203)(p,3n) → sup(201)Tl, which requires proton energy of around 28 MeV. Due to the limited proton energy of IPEN'S CV-28 cyclotron, studies on the irradiating conditions of natural mercury oxide pellets and drops of natural mercury metal were made in the range of 19 - 24 MeV. At the end of the bombardment of a 6 MeV thickness target of natural mercury metal with 19 MeV protons around 10 MBq sup(201)Tl/μ A h was obtained. (author)

Treatment planning with protons for pediatric retinoblastoma, medulloblastoma, and pelvic sarcoma: How do protons compare with other conformal techniques?

International Nuclear Information System (INIS)

Lee, Catherine T.; Bilton, Stephen D.; Famiglietti, Robin M.; Riley, Beverly A.; Mahajan, Anita; Chang, Eric L.; Maor, Moshe H.; Woo, Shiao Y.; Cox, James D.; Smith, Alfred R.

2005-01-01

Purpose: To calculate treatment plans and compare the dose distributions and dose-volume histograms (DVHs) for photon three-dimensional conformal radiation therapy (3D-CRT), electron therapy, intensity-modulated radiation therapy (IMRT), and standard (nonintensity modulated) proton therapy in three pediatric disease sites. Methods and Materials: The tumor volumes from 8 patients (3 retinoblastomas, 2 medulloblastomas, and 3 pelvic sarcomas) were studied retrospectively to compare DVHs from proton therapy with 3D-CRT, electron therapy, and IMRT. In retinoblastoma, several planning techniques were analyzed: A single electron appositional beam was compared with a single 3D-CRT lateral beam, a 3D-CRT anterior beam paired with a lateral beam, IMRT, and protons. In medulloblastoma, three posterior fossa irradiation techniques were analyzed: 3D-CRT, IMRT, and protons. Craniospinal irradiation (which consisted of composite plans of both the posterior fossa and craniospinal components) was also evaluated, primarily comparing spinal irradiation using 3D-CRT electrons, 3D-CRT photons, and protons. Lastly, in pelvic sarcoma, 3D-CRT, IMRT, and proton plans were assessed. Results: In retinoblastoma, protons resulted in the best target coverage combined with the most orbital bone sparing (10% was the mean orbital bone volume irradiated at ≥5 Gy for protons vs. 25% for 3D-CRT electrons, 69% for IMRT, 41% for a single 3D lateral beam, 51% for a 3D anterolateral beam with a lens block, and 65% for a 3D anterolateral beam without a lens block). A single appositional electron field was the next best technique followed by other planning approaches. In medulloblastoma, for posterior fossa and craniospinal irradiation, protons resulted in the least dose to the cochlea (for only posterior fossa irradiation at ≥20 Gy, 34% was the mean cochlear volume irradiated for protons, 87% for IMRT, 89% for 3D-CRT) and hypothalamus-pituitary axis (for only posterior fossa irradiation at ≥10 Gy

A review of dosimetric and toxicity modeling of proton versus photon craniospinal irradiation for pediatrics medulloblastoma.

Science.gov (United States)

Ho, Evangeline S Q; Barrett, Sarah A; Mullaney, Laura M

2017-08-01

Craniospinal irradiation (CSI) is the standard radiation therapy treatment for medulloblastoma. Conventional CSI photon therapy (Photon-CSI) delivers significant dose to surrounding normal tissue (NT). Research into pediatric CSI with proton therapy (Proton-CSI) has increased, with the aim of exploiting the potential to reduce NT dose and associated post-treatment complications. This review aims to compare treatment outcomes of pediatric medulloblastoma patients between Proton- and Photon-CSI treatments. A search and review of studies published between 1990 and 2016 comparing pediatric (2-18 years) medulloblastoma Proton- and Photon-CSI in three aspects - normal organ sparing and target coverage; normal organ dysfunction and second malignancy risks - was completed. Fifteen studies were selected for review and the results were directly compared. Proton-CSI reported improved out-of-field organ sparing while target coverage improvements were inconsistent. Normal organ dysfunction risks were predicted to be lower following Proton-CSI. Secondary malignancy risks (SMRs) were generally lower with Proton-CSI based on several different risk models. Proton-CSI conferred better treatment outcomes than Photon-CSI for pediatric medulloblastoma patients. This review serves to compare the current literature in the absence of long-term data from prospective studies.

Damaging and protective bystander cross-talk between human lung cancer and normal cells after proton microbeam irradiation

International Nuclear Information System (INIS)

Desai, Sejal; Kobayashi, Alisa; Konishi, Teruaki; Oikawa, Masakazu; Pandey, Badri N.

2014-01-01

Graphical abstract: - Highlights: • Proton-microbeam irradiated A549 cells send damaging signals to bystander A549 cells. • Irradiated A549–A549 bystander response is through gap junctional communication. • Bystander WI38 cells exert protective signalling in irradiated A549 cells. • Rescue of irradiated A549 cells by WI38 cells is independent of gap junctions. - Abstract: Most of the studies of radiation-induced bystander effects (RIBE) have been focused on understanding the radiobiological changes observed in bystander cells in response to the signals from irradiated cells in a normal cell population with implications to radiation risk assessment. However, reports on RIBE with relevance to cancer radiotherapy especially investigating the bidirectional and criss-cross bystander communications between cancer and normal cells are limited. Hence, in present study employing co-culture approach, we have investigated the bystander cross-talk between lung cancer (A549) and normal (WI38) cells after proton-microbeam irradiation using γ-H2AX foci fluorescence as a measure of DNA double-strand breaks (DSBs). We observed that in A549–A549 co-cultures, irradiated A549 cells exert damaging effects in bystander A549 cells, which were found to be mediated through gap junctional intercellular communication (GJIC). However, in A549–WI38 co-cultures, irradiated A549 did not affect bystander WI38 cells. Rather, bystander WI38 cells induced inverse protective signalling (rescue effect) in irradiated A549 cells, which was independent of GJIC. On the other hand, in response to irradiated WI38 cells neither of the bystander cells (A549 or WI38) showed significant increase in γ-H2AX foci. The observed bystander signalling between tumour and normal cells may have potential implications in therapeutic outcome of cancer radiotherapy

Damaging and protective bystander cross-talk between human lung cancer and normal cells after proton microbeam irradiation

Energy Technology Data Exchange (ETDEWEB)

Desai, Sejal [Radiation Signalling and Cancer Biology Section, Radiation Biology and Health Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Kobayashi, Alisa; Konishi, Teruaki; Oikawa, Masakazu [Radiation System and Engineering Section, Department of Technical Support and Development, Research, Development and Support Center, National Institute of Radiological Sciences, Chiba 263-8555 (Japan); Pandey, Badri N., E-mail: badrinarain@yahoo.co.in [Radiation Signalling and Cancer Biology Section, Radiation Biology and Health Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2014-05-15

Graphical abstract: - Highlights: • Proton-microbeam irradiated A549 cells send damaging signals to bystander A549 cells. • Irradiated A549–A549 bystander response is through gap junctional communication. • Bystander WI38 cells exert protective signalling in irradiated A549 cells. • Rescue of irradiated A549 cells by WI38 cells is independent of gap junctions. - Abstract: Most of the studies of radiation-induced bystander effects (RIBE) have been focused on understanding the radiobiological changes observed in bystander cells in response to the signals from irradiated cells in a normal cell population with implications to radiation risk assessment. However, reports on RIBE with relevance to cancer radiotherapy especially investigating the bidirectional and criss-cross bystander communications between cancer and normal cells are limited. Hence, in present study employing co-culture approach, we have investigated the bystander cross-talk between lung cancer (A549) and normal (WI38) cells after proton-microbeam irradiation using γ-H2AX foci fluorescence as a measure of DNA double-strand breaks (DSBs). We observed that in A549–A549 co-cultures, irradiated A549 cells exert damaging effects in bystander A549 cells, which were found to be mediated through gap junctional intercellular communication (GJIC). However, in A549–WI38 co-cultures, irradiated A549 did not affect bystander WI38 cells. Rather, bystander WI38 cells induced inverse protective signalling (rescue effect) in irradiated A549 cells, which was independent of GJIC. On the other hand, in response to irradiated WI38 cells neither of the bystander cells (A549 or WI38) showed significant increase in γ-H2AX foci. The observed bystander signalling between tumour and normal cells may have potential implications in therapeutic outcome of cancer radiotherapy.

Development of disease animal models using proton beam

International Nuclear Information System (INIS)

Nam, K. H.; Kim, E. K.; Kim, H. R.; Seo, Y. W.

2010-03-01

To identify proper proton beam dose for mutant mouse development, total 7 times of proton beam were performed. There are too low incidence of mutation in pup mouse which were derived embryos radiated by 1Gy proton beam. Some mutation could be identified in pup mice which were derived embryos radiated by 1.5-2.5Gy proton beam. Mouse embryos irradiated with 1-10Gy of proton beam were inhibited in their in vitro development to 2 cell stage. There was no pups born from embryos which were irradiated with proton beam over 3 Gy. Early mouse development were greatly inhibited by proton beam irradiation of over 10Gy when cultured in vitro. In conclusion, it is efficient to irradiate mouse embryo with 1.5-2.5Gy of proton beam for development of mutant mice

Cross sections from 800 MeV proton irradiation of terbium

Energy Technology Data Exchange (ETDEWEB)

Engle, J.W., E-mail: jwengle@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mashnik, S.G.; Bach, H.; Couture, A.; Jackman, K.; Gritzo, R.; Ballard, B.D.; Fassbender, M.; Smith, D.M.; Bitteker, L.J.; Ullmann, J.L.; Gulley, M.S.; Pillai, C.; John, K.D.; Birnbaum, E.R. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Nortier, F.M., E-mail: meiring@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2012-11-02

Terbium foils were irradiated with 800 MeV protons to ascertain the potential for production of lanthanide isotopes of interest in medical, astrophysical, and basic science research and to contribute to nuclear data repositories. Isotopes produced in the foil were quantified by gamma spectroscopy. Cross sections for 35 isotopes produced in the irradiation are reported and compared with predictions by the MCNP6 transport code using the CEM03.03, Bertini and INCL + ABLA event generators. Our results indicate the need to accurately consider fission and fragmentation of relatively light target nuclei like terbium in the modeling of nuclear reactions at 800 MeV. The predictive power of the code was found to be different for each event generator tested but was satisfactory for most of the product yields in the mass region where spallation reactions dominate. However, none of the event generators' results are in complete agreement with measured data.

Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

International Nuclear Information System (INIS)

Dharmarasu, Nethaji; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio

2002-01-01

We report the properties of observed defects in n + /p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E v +0.90±0.05 eV), HP2 (E v +0.73±0.05 eV), H2 (E v +0.55 eV), and EP1 (E c -0.54 eV), were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 trap present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Energy Technology Data Exchange (ETDEWEB)

La Rosa, A., E-mail: alessandro.larosa@cern.ch [CERN, Geneva 23, CH-1211 (Switzerland); Boscardin, M. [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Cobal, M. [Universita degli Studi di Udine and INFN Trieste, Gruppo Collegato di Udine, Via delle Scienze 208, I-33100 Udine (Italy); Dalla Betta, G.-F. [DISI, Universita degli Studi di Trento and INFN Padova, Gruppo Collegato d Trento, Via Sommarive 14, I-38123 Trento (Italy); Da Via, C. [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Darbo, G. [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Gallrapp, C. [CERN, Geneva 23, CH-1211 (Switzerland); Gemme, C. [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Huegging, F.; Janssen, J. [Physikalisches Institut, Universitaet Bonn, Nussallee 12, D-53115 Bonn (Germany); Micelli, A. [Universita degli Studi di Udine and INFN Trieste, Gruppo Collegato di Udine, Via delle Scienze 208, I-33100 Udine (Italy); Pernegger, H. [CERN, Geneva 23, CH-1211 (Switzerland); Povoli, M. [DISI, Universita degli Studi di Trento and INFN Padova, Gruppo Collegato d Trento, Via Sommarive 14, I-38123 Trento (Italy); Wermes, N. [Physikalisches Institut, Universitaet Bonn, Nussallee 12, D-53115 Bonn (Germany); Zorzi, N. [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy)

2012-07-21

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non-optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 Multiplication-Sign 10{sup 15}n{sub eq}cm{sup -2}, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

Analysis of proton irradiation products in simulated interstellar dusts by mass spectrometry

International Nuclear Information System (INIS)

Kasamatsu, Takashi; Kaneko, Takeo; Tsuchiya, Masahiko; Kobayashi, Kensei

1996-01-01

It is known that various kinds of organic compounds exist in space. In order to study the possibility of the formation of organic compounds in comets or their precursory bodies (interstellar dust grains), ice mixtures of carbon monoxide (or methane), ammonia and water made in a cryostat at 10 K ('simulated cometary ices') were irradiated with high energy protons. Irradiated ice products were warmed up to room temperature, while sublimed gases were analyzed with a quadrupole mass spectrometer. Some hydrocarbons and alcohols were detected. 'Amino acid precursors' (compounds yielding amino acids after hydrolysis) were detected in non-volatile products remaining on the substrate at room temperature. These results suggest the possible formation of organic compounds in interstellar dust grains by cosmic radiation. (author)

A Comparison of Molecular and Histopathological Changes in Mouse Intestinal Tissue Following Whole-Body Proton- or Gamma-Irradiation

Science.gov (United States)

Purgason, Ashley; Mangala, Lingegowda; Zhang, Ye; Hamilton, Stanley; Wu, Honglu

2010-01-01

There are many consequences following exposure to the space radiation environment which can adversely affect the health of a crew member. Acute radiation syndrome (ARS) involving nausea and vomiting, damage to radio-sensitive tissue such as the blood forming organs and gastrointestinal tract, and cancer are some of these negative effects. The space radiation environment is ample with protons and contains gamma rays as well. Little knowledge exists to this point, however, regarding the effects of protons on mammalian systems; conversely several studies have been performed observing the effects of gamma rays on different animal models. For the research presented here, we wish to compare our previous work looking at whole-body exposure to protons using a mouse model to our studies of mice experiencing whole-body exposure to gamma rays as part of the radio-adaptive response. Radio-adaptation is a well-documented phenomenon in which cells exposed to a priming low dose of radiation prior to a higher dose display a reduction in endpoints like chromosomal aberrations, cell death, micronucleus formation, and more when compared to their counterparts receiving high dose-irradiation only. Our group has recently completed a radio-adaptive experiment with C57BL/6 mice. For both this study and the preceding proton research, the gastrointestinal tract of each animal was dissected four hours post-irradiation and the isolated small intestinal tissue was fixed in formalin for histopathological examination or snap-frozen in liquid nitrogen for RNA isolation. Histopathologic observation of the tissue using standard H&E staining methods to screen for morphologic changes showed an increase in apoptotic lesions for even the lowest doses of 0.1 Gy of protons and 0.05 Gy of gamma rays, and the percentage of apoptotic cells increased with increasing dose. A smaller percentage of crypts showed 3 or more apoptotic lesions in animals that received 6 Gy of gamma-irradiation compared to mice

Measurement of prompt gamma profiles in inhomogeneous targets with a knife-edge slit camera during proton irradiation

International Nuclear Information System (INIS)

Priegnitz, M; Helmbrecht, S; Fiedler, F; Janssens, G; Smeets, J; Vander Stappen, F; Perali, I; Sterpin, E

2015-01-01

Proton and ion beam therapies become increasingly relevant in radiation therapy. To fully exploit the potential of this irradiation technique and to achieve maximum target volume conformality, the verification of particle ranges is highly desirable. Many research activities focus on the measurement of the spatial distributions of prompt gamma rays emitted during irradiation. A passively collimating knife-edge slit camera is a promising option to perform such measurements. In former publications, the feasibility of accurate detection of proton range shifts in homogeneous targets could be shown with such a camera. We present slit camera measurements of prompt gamma depth profiles in inhomogeneous targets. From real treatment plans and their underlying CTs, representative beam paths are selected and assembled as one-dimensional inhomogeneous targets built from tissue equivalent materials. These phantoms have been irradiated with monoenergetic proton pencil beams. The accuracy of range deviation estimation as well as the detectability of range shifts is investigated in different scenarios. In most cases, range deviations can be detected within less than 2 mm. In close vicinity to low-density regions, range detection is challenging. In particular, a minimum beam penetration depth of 7 mm beyond a cavity is required for reliable detection of a cavity filling with the present setup. Dedicated data post-processing methods may be capable of overcoming this limitation. (paper)

Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

International Nuclear Information System (INIS)

Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

1999-01-01

Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

International Nuclear Information System (INIS)

Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

2016-01-01

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

Energy Technology Data Exchange (ETDEWEB)

Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

2016-09-15

In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

Late cataractogenesis in rhesus monkeys irradiated with protons and radiogenic cataract in other species

International Nuclear Information System (INIS)

Lett, J.T.; Lee, A.C.; Cox, A.B.

1991-01-01

Rhesus monkeys (Macaca mulatta) which were irradiated at ca. 2 years of age with acute doses (less than or equal to 5 Gy) of protons (32-2300 MeV) are exhibiting the late progressive phase of radiation cataractogenesis 20-24 years after exposure, the period during which we have been monitoring the sequelae of irradiation of the lens. The median life span of the primate is approximately 24 years. Analogous late ocular changes also occur in a similar period of the lifetimes of New Zealand White (NZW) rabbits (Oryctolagus cuniculus) exposed at 8-10 weeks of age to 460-MeV 56 Fe ions. In this experiment, which has been in progress for ca. 6 years, we are following the development of radiation-induced lenticular opacification (cataractogenic profiles) throughout the life span. The median life span of the lagomorph is 5-7 years. Cataractogenic profiles for NZW rabbits irradiated with 20 Ne and 40 Ar ions and 60 Co gamma photons were obtained previously. Reference is also made to measurements of the cataractogenic profiles of a short-lived rodent, the Fischer 344 rat (Rattus norvegicus) during the first year after exposure at 8-10 weeks of age to spread-Bragg-peak protons of 55 MeV nominal energy. The median life span of the rodent is reported to be 2-3 years

Capability demonstration of simultaneous proton beam irradiation during exposure to molten lead–bismuth eutectic for HT9 steel

International Nuclear Information System (INIS)

Qvist, Staffan; Bolind, Alan Michael; Hosemann, Peter; Wang, Yongqiang; Tesmer, Joseph; De Caro, Magdalena Serrano; Bourke, Mark

2013-01-01

We report the design and assembly of a corrosion station to enable simultaneous proton irradiation of a metallic surface that was also in contact with molten lead–bismuth eutectic (LBE). The capability has been established at the ion beam materials laboratory at Los Alamos National Laboratory (LANL). The engineering design focused on temperature and oxygen content control in the LBE, as well as the ability to achieve doses significantly in excess of 1 dpa in the contact region over the irradiation campaigns. In the preliminary demonstration of capability reported here, a sample made of HT9 steel was placed in contact with LBE at 450 °C and irradiated for 58 h at an average proton beam current of 0.3 μA/mm 2 . SRIM [1] calculations indicate that the nominal surface dose ranged from approximately 3–22 dpa. This paper outlines the experimental setup and design constraints. Characterization of the sample will be reported in a subsequent paper.

Capability demonstration of simultaneous proton beam irradiation during exposure to molten lead–bismuth eutectic for HT9 steel

Energy Technology Data Exchange (ETDEWEB)

Qvist, Staffan, E-mail: staffan@berkeley.edu [University of California, Berkeley (United States); Bolind, Alan Michael [University of California, Berkeley (United States); Japan Atomic Energy Agency (Japan); Hosemann, Peter [University of California, Berkeley (United States); Wang, Yongqiang; Tesmer, Joseph; De Caro, Magdalena Serrano; Bourke, Mark [Los Alamos National Laboratory (United States)

2013-01-11

We report the design and assembly of a corrosion station to enable simultaneous proton irradiation of a metallic surface that was also in contact with molten lead–bismuth eutectic (LBE). The capability has been established at the ion beam materials laboratory at Los Alamos National Laboratory (LANL). The engineering design focused on temperature and oxygen content control in the LBE, as well as the ability to achieve doses significantly in excess of 1 dpa in the contact region over the irradiation campaigns. In the preliminary demonstration of capability reported here, a sample made of HT9 steel was placed in contact with LBE at 450 °C and irradiated for 58 h at an average proton beam current of 0.3 μA/mm{sup 2}. SRIM [1] calculations indicate that the nominal surface dose ranged from approximately 3–22 dpa. This paper outlines the experimental setup and design constraints. Characterization of the sample will be reported in a subsequent paper.

Gene Expression Changes in Mouse Intestinal Tissue Following Whole-Body Proton or Gamma-Irradiation

Science.gov (United States)

Purgason, Ashley; Zhang, Ye; Mangala, Lingegowda; Nie, Ying; Gridley, Daila; Hamilton, Stanley R.; Seidel, Derek V.; Wu, Honglu

2014-01-01

Crew members face potential consequences following exposure to the space radiation environment including acute radiation syndrome and cancer. The space radiation environment is ample with protons, and numerous studies have been devoted to the understanding of the health consequences of proton exposures. In this project, C57BL/6 mice underwent whole-body exposure to 250 MeV of protons at doses of 0, 0.1, 0.5, 2 and 6 Gy and the gastrointestinal (GI) tract of each animal was dissected four hours post-irradiation. Standard H&E staining methods to screen for morphologic changes in the tissue showed an increase in apoptotic lesions for even the lowest dose of 0.1 Gy, and the percentage of apoptotic cells increased with increasing dose. Results of gene expression changes showed consistent up- or down- regulation, up to 10 fold, of a number of genes across exposure doses that may play a role in proton-induced oxidative stress including Gpx2. A separate study in C57BL/6 mice using the same four hour time point but whole-body gamma-irradiation showed damage to the small intestine with lesions appearing at the smallest dose of 0.05 Gy and increasing with increasing absorbed dose. Expressions of genes associated with oxidative stress processes were analyzed at four hours and twenty-four hours after exposure to gamma rays. We saw a much greater number of genes with significant up- or down-regulation twenty-four hours post-exposure as compared to the four hour time point. At both four hours and twenty-four hours post-exposure, Duox1 and Mpo underwent up-regulation for the highest dose of 6 Gy. Both protons and gamma rays lead to significant variation in gene expressions and these changes may provide insight into the mechanism of injury seen in the GI tract following radiation exposure. We have also completed experiments using a BALB/c mouse model undergoing whole-body exposure to protons. Doses of 0, 0.1, 1 and 2 Gy were used and results will be compared to the work mentioned

Pressure control of a proton beam-irradiated water target through an internal flow channel-induced thermosyphon.

Science.gov (United States)

Hong, Bong Hwan; Jung, In Su

2017-07-01

A water target was designed to enhance cooling efficiency using a thermosyphon, which is a system that uses natural convection to induce heat exchange. Two water targets were fabricated: a square target without any flow channel and a target with a flow channel design to induce a thermosyphon mechanism. These two targets had the same internal volume of 8 ml. First, visualization experiments were performed to observe the internal flow by natural convection. Subsequently, an experiment was conducted to compare the cooling performance of both water targets by measuring the temperature and pressure. A 30-MeV proton beam with a beam current of 20 μA was used to irradiate both targets. Consequently, the target with an internal flow channel had a lower mean temperature and a 50% pressure drop compared to the target without a flow channel during proton beam irradiation. Copyright © 2017 Elsevier Ltd. All rights reserved.

Spatial distribution of moderated neutrons along a Pb target irradiated by high-energy protons

International Nuclear Information System (INIS)

Fragopoulou, M.; Manolopoulou, M.; Stoulos, S.; Brandt, R.; Westmeier, W.; Kulakov, B.A.; Krivopustov, M.I.; Sosnin, A.N.; Debeauvais, M.; Adloff, J.C.; Zamani Valasiadou, M.

2006-01-01

High-energy protons in the range of 0.5-7.4 GeV have irradiated an extended Pb target covered with a paraffin moderator. The moderator was used in order to shift the hard Pb spallation neutron spectrum to lower energies and to increase the transmutation efficiency via (n,γ) reactions. Neutron distributions along and inside the paraffin moderator were measured. An analysis of the experimental results was performed based on particle production by high-energy interactions with heavy targets and neutron spectrum shifting by the paraffin. Conclusions about the spallation neutron production in the target and moderation through the paraffin are presented. The study of the total neutron fluence on the moderator surface as a function of the proton beam energy shows that neutron cost is improved up to 1 GeV. For higher proton beam energies it remains constant with a tendency to decline

Radiation effects in pigtailed GaAs and GaA1As LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1981-06-01

Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

Extraction of carrier-free 103Pd from thin rhodium wire irradiated with a proton beam in U-150 cyclotron

International Nuclear Information System (INIS)

Yuldashev, B.S.; Khudajbergenov, U.; Gulamov, I.R.; Mirzarva, M.A.; Rylov, A.A.

2003-01-01

A procedure for preparation of 103 Pd isotope of 99.9 % purity from a thin rhodium wire irradiated by 21 MeV proton beam in a cyclotron was developed. The desired product was prepared by electrolytic dissolution of the irradiated target in 6 M HCl with subsequent extraction of 103 Pd isotope without carrier by dimethylglyoxime in chloroform [ru

Recovery of Ra-223 from natural thorium irradiated by protons

Energy Technology Data Exchange (ETDEWEB)

Vasiliev, Aleksandr N.; Ostapenko, Valentina S. [Lomonosov Moscow State Univ. (Russian Federation); Russian Academy of Sciences, Moscow-Troitsk (Russian Federation). Inst. for Nuclear Research; Lapshina, Elena V.; Ermolaev, Stanislav V.; Zhuikov, Boris L. [Russian Academy of Sciences, Moscow-Troitsk (Russian Federation). Inst. for Nuclear Research; Danilov, Sergey S. [Lomonosov Moscow State Univ. (Russian Federation); Kalmykov, Stepan N. [Lomonosov Moscow State Univ. (Russian Federation); National Research Center ' Kurchatov Institute' (NRC ' Kurchatov Institute' ), Moscow (Russian Federation)

2016-11-01

Irradiation of natural thorium with medium-energy protons is considered to be a prospective approach to large-scale production of {sup 225}Ac and {sup 223}Ra. In addition to the earlier-developed method of {sup 225}Ac isolation, the present work focuses on the simultaneous recovery of {sup 223}Ra from the same thorium target. Radiochemical procedure is based on liquid-liquid extraction, cation exchange and extraction chromatography. The procedure provides separation of radium from spallation and fission products generated in the thorium target. High chemical yield (85-90%) and radionuclide purity of {sup 223}Ra (> 99.8% except {sup 224}Ra and {sup 225}Ra isotopes) have been achieved.

Postirradiation tensile properties of Mo and Mo alloys irradiated with 600 MeV protons

International Nuclear Information System (INIS)

Mueller, G.V.; Gavillet, D.; Victoria, M.; Martin, J.L.

1994-01-01

Tensile specimens of pure Mo and Mo-5 Re, Mo-41 Re and TZM alloys have been irradiated with 600 MeV protons in the PIREX facility at 300 and 660 K to 0.5 dpa. Results of the postirradiation tensile testing show a strong radiation hardening and a severe loss of ductility for all the materials tested at room temperature. ((orig.))

Effect of Proton Irradiation on the Corrosion Behaviors of Ferritic/Martensitic Steel in Liquid Metal Environment

Energy Technology Data Exchange (ETDEWEB)

Lee, Jeonghyeon; Kim, Tae Yong; Kim, Ji Hyun [UNIST, Ulsan (Korea, Republic of)

2016-10-15

Liquid metal fast breeder reactors (LMFBRs) such as sodium-cooled fast reactor (SFR) and lead-cooled fast reactor (LFR) are the candidates of GEN-IV nuclear energy systems. Among various liquid metals that can be used as primary coolant material, sodium is a world widely used coolant for GEN-IV reactors. In this study, as-received Gr.92 and irradiated Gr.92 specimen in the oxygen-saturated liquid sodium were examined at high temperature for 300h. The microstructure results reveal the information of the effect of irradiation and effect of the chrome concentration in specimen. From the SRIM result, penetration distance of 40 μm in stainless steel and nominal sample thickness of 30 μm was used to avoid the damage peak and any proton implantation and From the microstructural evaluation, chromium-rich zones existed under the surface of the both of non-irradiated and irradiated materials. The irradiated materials showed chromium-rich zones with larger depths than the non-irradiated specimens.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

CERN Document Server

Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Axillary irradiation omitting axillary dissection in breast cancer: is there a role for shoulder-sparing proton therapy?

Science.gov (United States)

Farace, P; Deidda, M A; Amichetti, M

2015-10-01

The recent EORTC 10981-22023 AMAROS trial showed that axillary radiotherapy and axillary lymph node dissection provide comparable local control and reduced lymphoedema in the irradiated group. However, no significant differences between the two groups in range of motion and quality of life were reported. It has been acknowledged that axillary irradiation could have induced some toxicity, particularly shoulder function impairment. In fact, conventional breast irradiation by tangential beams has to be modified to achieve full-dose coverage of the axillary nodes, including in the treatment field a larger portion of the shoulder structures. In this scenario, alternative irradiation techniques were discussed. Compared with modern photon techniques, axillary irradiation by proton therapy has the potential for sparing the shoulder without detrimental increase of the medium-to-low doses to the other normal tissues.

Imaging performance of a Timepix detector based on semi-insulating GaAs

Science.gov (United States)

Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

2018-01-01

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

Optimal conditions for high current proton irradiations at the university of Wisconsin's ion beam laboratory

International Nuclear Information System (INIS)

Wetteland, C. J.; Field, K. G.; Gerczak, T. J.; Eiden, T. J.; Maier, B. R.; Albakri, O.; Sridharan, K.; Allen, T. R.

2013-01-01

The National Electrostatics Corporation's (NEC) Toroidal Volume Ion Source (TORVIS) source is known for exceptionally high proton currents with minimal service downtime as compared to traditional sputter sources. It has been possible to obtain over 150μA of proton current from the source, with over 70μA on the target stage. However, beam fluxes above ∼1×10 17 /m2-s may have many undesirable effects, especially for insulators. This may include high temperature gradients at the surface, sputtering, surface discharge, cracking or even disintegration of the sample. A series of experiments were conducted to examine the role of high current fluxes in a suite of ceramics and insulating materials. Results will show the optimal proton irradiation conditions and target mounting strategies needed to minimize unwanted macro-scale damage, while developing a procedure for conducting preliminary radiation experiments.

Estimating the effectiveness of human-cell irradiation by protons of a therapeutic beam of the joint institute for nuclear research phasotron using cytogenetic methods

Science.gov (United States)

Zaytseva, E. M.; Govorun, R. D.; Mitsin, G. V.; Molokanov, A. G.

2011-11-01

The effectiveness of the impact of therapeutic proton beams in human cells with respect to the criterion of formation of chromosome aberrations in human-blood lymphocytes is estimated. The physical characteristics of radiation (proton LET at the input of the object and in the region of the modified Bragg peak) and the role of the biological factor (the differences in the radiosensitivity of nondividing cells corresponding to the irradiation of normal tissues along the proton-beam path and tumor tissues) are taken into account. The relative biological effectiveness of protons is ˜1 at the beam input of the object and ˜1.2 in the Bragg peak region. Taking into account the higher radiosensitivity of dividing cells in the G 2 phase of the cell cycle, the irradiation effectiveness increases to ˜1.4.

Radiation damage in proton-irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Lange, Joern

2009-07-15

In this work radiation hardness of 75 {mu}m, 100 {mu}m and 150 {mu}m thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10{sup 14} cm{sup -2} and 10{sup 16} cm{sup -2} was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10{sup 15} cm{sup -2}. The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10{sup 15} cm{sup -2}. During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with {alpha}-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

Radiation damage in proton-irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Lange, Joern

2009-07-01

In this work radiation hardness of 75 μm, 100 μm and 150 μm thick epitaxial silicon pad diodes of both standard and oxygenated material was investigated. Damage after 24 GeV/c proton irradiation in a 1MeV neutron equivalent fluence range between 10 14 cm -2 and 10 16 cm -2 was studied and isothermal annealing experiments at 80 C were carried out. Standard CV/IV measurements could be performed up to 4 x 10 15 cm -2 . The volume-normalised reverse current was found to increase linearly with fluence with a slope independent of the thickness and impurity concentration. However, due to large fluctuations the fluences had to be renormalised using the current-related damage parameter. Concerning the depletion voltage, nearly all materials remained at a moderate level up to 4 x 10 15 cm -2 . During short-term annealing acceptors annealed out, whereas others were introduced during the long-term annealing. The stable damage was characterised by donor removal at low fluences and fluence-proportional predominant donor introduction for highly irradiated diodes, depending on the oxygen level. No type inversion was observed. Time-resolved measurements with a new 670 nm laser-TCT setup made the determination of the trapping time constant with the charge correction method possible. The results agreed with expectations and showed a linear increase of trapping probability with fluence. The electric field exhibited a double peak structure in highly irradiated diodes. Charge collection efficiency measurements with α-particles were independent of oxygen concentration, but showed an improved efficiency for thinner diodes. A comparison to simulation revealed systematic discrepancies. A non-constant trapping time parameter was proposed as possible solution. (orig.)

Modeling and analysis of all the positron emitters simulation steps generated during the treatment phase in proton-therapy - from the beam to the PET camera - for the follow-up of the irradiations

International Nuclear Information System (INIS)

Ty, C.V.N.

2012-01-01

The proton-therapy is an innovative technique for cancer treatment in critical areas, such as the eye or the head. Even though the interaction of protons with human tissues is a well-known physical phenomenon which gives rise to the proton-therapy, there are uncertainties on the proton trajectory due to heterogeneities in the irradiated tissue, the calculation of the beam parameters in the planning treatment affects the theoretical benefits of the protons and the chosen dose delivery process. Thus, methods for irradiation quality control have been suggested. Most of them rely on utilizing the mapping of the positron emitters generated during the irradiation. They are detectable and quantifiable thanks to the use of the PET (positron emitter tomography), a medical imaging technique mainly used for the cancer expansion assessment. PET acquisitions were proposed and then realized on phantoms and patients after proton-therapy. The quality control relies on comparing the measured radioactive distribution to the simulated β + distribution. The modeling of the positron activity generated by protons in the irradiated area can be divided into three steps: the simulation of the proton beam, the modeling of the proton interactions in the irradiated object and the modeling of the PET acquisition. Different ways of simulating these steps are possible. This PhD work suggests different ways of modeling the three steps and evaluates theirs benefits for the irradiation quality control. We have restrained our evaluation to the verification of the proton range and to the uncertainties related to the proton range. This research work utilizes on irradiations in homogenous and inhomogeneous areas in a head model. We have compared the uncertainties on the proton range measured thanks to the following β + distributions: 1) A β + distribution obtained by modeling the irradiation with a proton beam simulated analytically and simulated using the complete Monte Carlo method; 2) A Monte

Proton irradiation and endometriosis

International Nuclear Information System (INIS)

Wood, D.H.; Yochmowitz, M.G.; Salmon, Y.L.; Eason, R.L.; Boster, R.A.

1983-01-01

It was found that female rhesus monkeys given single total-body exposures of protons of varying energies developed endometriosis at a frequency significantly higher than that of nonirradiated animals of the same age. The minimum latency period was determined to be 7 years after the proton exposure. The doses and energies of the radiation received by the experimental animals were within the range that could be received by an aircrew member in near-earth orbit during a random solar flare event. It is concluded that endometriosis should be a consideration in assessing the risk of delayed radiation effects in female crew members. 15 references

Proton Testing of Advanced Stellar Compass Digital Processing Unit

DEFF Research Database (Denmark)

Thuesen, Gøsta; Denver, Troelz; Jørgensen, Finn E

1999-01-01

The Advanced Stellar Compass Digital Processing Unit was radiation tested with 300 MeV protons at Proton Irradiation Facility (PIF), Paul Scherrer Institute, Switzerland.......The Advanced Stellar Compass Digital Processing Unit was radiation tested with 300 MeV protons at Proton Irradiation Facility (PIF), Paul Scherrer Institute, Switzerland....

Estimation of mutation rates induced by large doses of gamma, proton and neutron irradiation of the X-chromosome of the nematode Panagrellus redivivus

International Nuclear Information System (INIS)

Denich, K.T.R.; Samoiloff, M.R.

1984-01-01

The radiation-resistant free-living nematode Panagrellus redivivus was used to study mutation rates in oocytes, following gamma, proton and neutron irradiation in the dose range 45-225 grays. γ-Radiation produced approximately 0.001 lethal X-chromosomes per gray over the range tested. Proton or neutron irradiation produced approximately 0.003 lethal X-chromosomes per gray at lower doses, with the mutation rate dropping to 0.001 lethal X-chromosome per gray at the higher doses. These results suggest a dose-dependent mutation-repair system. Cell lethality was also examined. γ-Radiation produced the greatest amount of cell lethality at all doses, while neutron irradiation had no cell lethal effect at any of the doses examined. (orig.)

Submonolayer Quantum Dot Infrared Photodetector

Science.gov (United States)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Development of useful genetic resources by proton-beam irradiation

International Nuclear Information System (INIS)

Kim, In Gyu; Kim, Kug Chan; Park, Hyi Gook; Jung, Il Lae; Seo, Yong Won; Chang, Chul Seong; Kim, Jae Yoon; Ham, Jae Woong

2005-08-01

The aim of this study is to develop new, useful and high-valuable genetic resources through the overproduction of biodegradable plastics and the propagation of wheat using proton-beam irradiation. Useful host strain was isolated through the mutagenization of the Escherichia coli K-12 strain, followed by characterizing the genetic and physiological properties of the E. coli mutant strains. The selected E. coli mutant strain produced above 85g/L of PHB, showed above 99% of PHB intracellular content and spontaneously liberated intracellular PHB granules. Based on the results, the production cost of PHB has been estimated to approximately 2$/kg, leading effective cost-down. Investigated the propagation of wheat and its variation, a selectable criterion of wet pro of was established and genetic analysis of useful mutant was carried out

Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

International Nuclear Information System (INIS)

Shu Haibo; Chen Xiaoshuang; Ding Zongling; Dong Ruibin; Lu Wei

2010-01-01

The mechanism of the preferential adsorption of Ga on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires is studied by using first-principles calculations within density functional theory. The calculated results show that Au preadsorption on GaAs(111)B surface significantly enhances the stability of the Ga adatom in comparison with the adsorption of Ga on clean GaAs(111)B surface. The stabilization of the Ga adatom is due to charge transfers from the Ga 4p and 4s states to the Au 6s and As 4p states. The number of Ga adatoms stabilized on GaAs(111)B surfaces depends on the size of surface Au cluster. The reason is that Au acted as an electron acceptor on GaAs(111)B surface assists the charge transfer of Ga adatoms for filling the partial unoccupied bands of GaAs(111)B surface. Our results are helpful to understand the growth of Au-assisted GaAs nanowires.

On the modeling of irradiation-induced homogeneous precipitation in proton-bombarded Ni-Si solid solutions

Science.gov (United States)

Lam, Nghi Q.; Janghorban, K.; Ardell, A. J.

1981-10-01

Irradiation-induced solute redistribution leading to precipitation of coherent γ' particles in undersaturated Ni-based solid solutions containing 6 and 8 at.% Si during 400-keV proton bombardment was modeled, based on the concept of solute segregation in concentrated alloys under spatially-dependent defect production conditions. The combined effects of (i) an extremely large difference between the defect production rates in the peak-damage and mid-range regions during irradiation and (ii) a preferential coupling between the interstitial and solute fluxes generate a net transient flux of Si atoms into the mid-range region, which is much larger than the solute flux out of this location. As a result, the Si concentration exceeds the solubility limit and homogeneous precipitation of the γ' phase occurs in this particular region of the irradiated samples. The spatial, compositional and temperature dependences of irradiation-induced homogeneous precipitation derived from the present theoretical calculations are in good qualitative agreement with experimental observations

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

International Nuclear Information System (INIS)

Kaska, Katharina; Moll, Michael; Fahrer, Manuel

2010-01-01

A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10 15 n/cm 2 and protons up to 1.7x10 15 p/cm 2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1x10 12 n eq /cm 2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

Study of the iron corrosion at the interface of different media (water, air) submitted to protons irradiation

International Nuclear Information System (INIS)

Lapuerta, S.

2005-10-01

During the deep geological disposal, stainless steel containers of the vitrified waste will be put in carbon steel overpacks. After the closing of the storage site, overpacks will be in contact with a humid air and a radioactive medium. After hundred years, overpacks could be in contact with water radiolysis in an anoxic medium. In this context, my PhD work is a fundamental study which is the understanding of the corrosion mechanisms of pure iron under proton irradiation. This corrosion is affected by the contact of iron with different atmospheres (air, nitrogen) and water. In the case of the atmospheric iron corrosion under irradiation, we have studied the influence of the proton beam flux. During this work, we have characterized the structure of the oxides formed at the iron surface. The structure formed does not correspond to iron oxides and hydroxides indexed. However, we have shown that the oxide structure is close to that of lepidocrocite and bernalite. Moreover, we have determined the oxygen diffusion coefficient in iron under irradiation and we have shown that the irradiation accelerates of 6 orders of magnitude the iron corrosion. In addition, the irradiations which were realized in different gas have put in evidence the negligible role of nitrates, and the importance of the O 2 /H 2 O coupling on the iron corrosion. Finally, we have shown the influence of the relative humidity, the maximum of the corrosion being observed for a relative humidity close to 45%. In the case of the iron corrosion in aqueous media under irradiation, the influence of the oxygen dissolved in water has been studied using a surface marker. We have put in evidence that the corrosion is twice more significant in aerated medium than in deaerated medium. Moreover, the influence of radicals has been shown. An irradiated sample is more corroded than a sample put in contact with a H 2 O 2 solution. Finally, the follow-up of the iron potential under irradiation have shown the majority role

SU-F-T-150: Comparing Normal Tissue Irradiated Volumes for Proton Vs. Photon Treatment Plans On Lung Patients

Energy Technology Data Exchange (ETDEWEB)

Liu, A; Mohan, R; Liao, Z [UT MD Anderson Cancer Center, Houston, TX (United States)

2016-06-15

Purpose: The aim of this work is to compare the “irradiated volume” (IRV) of normal tissues receiving 5, 20, 50, 80 and 90% or higher of the prescription dose with passively scattered proton therapy (PSPT) vs. IMRT of lung cancer patients. The overall goal of this research is to understand the factors affecting outcomes of a randomized PSPT vs. IMRT lung trial. Methods: Thirteen lung cancer patients, selected randomly, were analyzed. Each patient had PSPT and IMRT 74 Gy (RBE) plans meeting the same normal tissue constraints generated. IRVs were created for pairs of IMRT and PSPT plans on each patient. The volume of iGTV, (respiratory motion-incorporated GTV) was subtracted from each IRV to create normal tissue irradiated volume IRVNT. The average of IRVNT DVHs over all patients was also calculated for both modalities and inter-compared as were the selected dose-volume indices. Probability (p value) curves were calculated based on the Wilcoxon matched-paired signed-rank test to determine the dose regions where the statistically significant differences existed. Results: As expected, the average 5, 20 and 50% IRVNT’s for PSPT was found to be significantly smaller than for IMRT (p < 0.001, 0.01, and 0.001 respectively). However, the average 90% IRVNT for PSPT was greater than for IMRT (p = 0.003) presumably due to larger penumbra of protons and the long range of protons in lower density media. The 80% IRVNT for PSPT was also larger but not statistically distinguishable (p = .224). Conclusion: PSPT modality has smaller irradiated volume at lower doses, but larger volume at high doses. A larger cohort of lung patients will be analyzed in the future and IRVNT of patients treated with PSPT and IMRT will be compared to determine if the irradiated volumes (the magnitude of “dose bath”) correlate with outcomes.

Microscopic evaluation of nuclear foci (gamma H2AX) in cells irradiated with protons and lithium ions

International Nuclear Information System (INIS)

Bracalente, C.; Molinari, Beatriz L.; Duran, Hebe; Ibanez, I.; Palmieri, M.; Kreiner, Andres J.; Burlon, Alejandro; Valda, Alejandro; Davidson, J.; Davidson, M.; Vazquez, Monica; Ozafran, Mabel J.

2007-01-01

Full text: The special properties of both physical and biological radiation particles with high-LET (Linear Transfer of Energy) have led to its increased use in cancer therapy. In this work, the effect of high and low LET radiation on cell lines with different radiosensitivity (Irs-20 and CHO-10B2) quantifying the number and size of nuclear foci obtained from histone H2AX (γH2AX) phosphorylation which plays an important role in DNA damage reparation is compared. Foci detection was performed by immunocytochemical methods and fluorescence microscopy. The cells cultures were irradiated with plateau-phase protons (14 MeV, LET: 3 keV/μ), on Bragg peak (3 MeV. LET: 14 KeV/μ) and with Lithium ions (7 MeV, LET: 250 KeV//μ) on the Tandar accelerator. A clonogenic analysis of the two cell lines was made. Irradiation with protons (low LET) showed a significant difference (p [es

Ion Prostate Irradiation (IPI) – a pilot study to establish the safety and feasibility of primary hypofractionated irradiation of the prostate with protons and carbon ions in a raster scan technique

International Nuclear Information System (INIS)

Habl, Gregor; Herfarth, Klaus; Hatiboglu, Gencay; Edler, Lutz; Uhl, Matthias; Krause, Sonja; Roethke, Matthias; Schlemmer, Heinz P; Hadaschik, Boris; Debus, Juergen

2014-01-01

Due to physical characteristics, ions like protons or carbon ions can administer the dose to the target volume more efficiently than photons since the dose can be lowered at the surrounding normal tissue. Radiation biological considerations are based on the assumption that the α/β value for prostate cancer cells is 1.5 Gy, so that a biologically more effective dose could be administered due to hypofractionation without increasing risks of late effects of bladder (α/β = 4.0) and rectum (α/β = 3.9). The IPI study is a prospective randomized phase II study exploring the safety and feasibility of primary hypofractionated irradiation of the prostate with protons and carbon ions in a raster scan technique. The study is designed to enroll 92 patients with localized prostate cancer. Primary aim is the assessment of the safety and feasibility of the study treatment on the basis of incidence grade III and IV NCI-CTC-AE (v. 4.02) toxicity and/or the dropout of the patient from the planned therapy due to any reason. Secondary endpoints are PSA-progression free survival (PSA-PFS), overall survival (OS) and quality-of-life (QoL). This pilot study aims at the evaluation of the safety and feasibility of hypofractionated irradiation of the prostate with protons and carbon ions in prostate cancer patients in an active beam technique. Additionally, the safety results will be compared with Japanese results recently published for carbon ion irradiation. Due to the missing data of protons in this hypofractionated scheme, an in depth evaluation of the toxicity will be created to gain basic data for a following comparison study with carbon ion irradiation. Clinical Trial Identifier: http://clinicaltrials.gov/show/NCT01641185 (clinicaltrials.gov)

Effect of Proton Beam on Cancer Progressive and Metastatic Enzymes

International Nuclear Information System (INIS)

Sohn, Y. H.; Nam, K. S.; Oh, Y. H.; Kim, M. K.; Kim, M. Y.; Jang, J. S.

2008-04-01

The purpose of this study was to investigate the effect of proton beam on enzymes for promotion/progression of carcinogenesis and metastasis of malignant tumor cells to clarify proton beam-specific biological effects. The changes of cancer chemopreventive enzymes in human colorectal adenocarcinoma HT-29 cells irradiated with proton beams were tested by measuring the activities of quinine reductase (QR), glutathione S-transferase (GST), and ornithine decarboxylase (ODC), glutathione (GSH) levels, and expression of cyclooxygenase-2 (COX-2). We also examined the effect of proton beam on the ODC activity and expression of COX-2 in human breast cancer cell. We then assessed the metastatic capabilities of HT-29 and MDA-MB-231 cells irradiated with proton beam by measuring the invasiveness of cells through Matrigel-coated membrane and 12-O-tetradecanoylphorbol-13-acetate (TPA)-induced MMP activity in MDA-MB-231 and HT-29 cells. QR activity of irradiated HT-29 cells was slightly increased. Proton irradiation at dose of 32 Gy in HT-29 cells increased GST activity by 1.23-fold. In addition GSH levels in HT-29 cells was significantly increased 1.23- (p<0.05), 1.32- (p<0.01) and 1.34-fold (p<0.01) with the proton irradiation at doses of 8, 16 and 32 Gy, respectively. These results suggest that colon cancer chemopreventive activity was increased with the proton irradiation by increasing QR and GST activities and GSH levels and inhibiting ODC activity. Proton ion irradiation decreased the invasiveness of TPA-treated HT-29 cells and MDA-MB-231 cells through Matrigel-coated membrane. Proton ion irradiation pretreatment decreased TPA-induced MMP activity in MDA-MB-231 and HT-29 cells. Further studies are necessary to investigate if these findings could be translated to in vivo situations

Radiation exposure during in-vivo analysis of human dental enamel by proton irradiation

International Nuclear Information System (INIS)

Baijot-Stroobants, J.; Bodart, F.; Deconninck, G.; Vreven, J.

Fluorine can be analysed by proton activation, with detection of prompt γ-rays. Using external beams, it is possible to make in-vivo determinations and to follow the concentration in fluoridated enamel. Radiation damage and radiation hazards are investigated. It is found that the dose rate is very small and that the technique can be used without radiation problems. Local destruction on the enamel surface is investigated using a scanning microscope, no modification is observed in the cristallite structure after irradiation. (author)

Design optimization of GaAs betavoltaic batteries

International Nuclear Information System (INIS)

Chen Haiyanag; Jiang Lan; Chen Xuyuan

2011-01-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm -2 63 Ni, the open circuit voltage of the optimized batteries is about ∼0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P + PN + junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm -2 , which indicates a carrier diffusion length of less than 1 μm. The overall results show that multi-layer P + PN + junctions are the preferred structures for GaAs betavoltaic battery design.

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Induction and Rejoining of DNA Double Strand Breaks Assessed by H2AX Phosphorylation in Melanoma Cells Irradiated with Proton and Lithium Beams

International Nuclear Information System (INIS)

Ibanez, Irene L.; Bracalente, Candelaria; Molinari, Beatriz L.; Palmieri, Monica A.; Policastro, Lucia; Kreiner, Andres J.; Burlon, Alejandro A.; Valda, Alejandro; Navalesi, Daniela; Davidson, Jorge; Davidson, Miguel; Vazquez, Monica; Ozafran, Mabel; Duran, Hebe

2009-01-01

Purpose: The aim of this study was to evaluate the induction and rejoining of DNA double strand breaks (DSBs) in melanoma cells exposed to low and high linear energy transfer (LET) radiation. Methods and Materials: DSBs and survival were determined as a function of dose in melanoma cells (B16-F0) irradiated with monoenergetic proton and lithium beams and with a gamma source. Survival curves were obtained by clonogenic assay and fitted to the linear-quadratic model. DSBs were evaluated by the detection of phosphorylated histone H2AX (γH2AX) foci at 30 min and 6 h post-irradiation. Results: Survival curves showed the increasing effectiveness of radiation as a function of LET. γH2AX labeling showed an increase in the number of foci vs. dose for all the radiations evaluated. A decrease in the number of foci was found at 6 h post-irradiation for low LET radiation, revealing the repair capacity of DSBs. An increase in the size of γH2AX foci in cells irradiated with lithium beams was found, as compared with gamma and proton irradiations, which could be attributed to the clusters of DSBs induced by high LET radiation. Foci size increased at 6 h post-irradiation for lithium and proton irradiations in relation with persistent DSBs, showing a correlation with surviving fraction. Conclusions: Our results showed the response of B16-F0 cells to charged particle beams evaluated by the detection of γH2AX foci. We conclude that γH2AX foci size is an accurate parameter to correlate the rejoining of DSBs induced by different LET radiations and radiosensitivity.

Radiosensitivity of Patient-Derived Glioma Stem Cell 3-Dimensional Cultures to Photon, Proton, and Carbon Irradiation

Energy Technology Data Exchange (ETDEWEB)

Chiblak, Sara; Tang, Zili [German Cancer Consortium, Heidelberg (Germany); Molecular and Translational Radiation Oncology, Heidelberg Ion Therapy Center, Heidelberg Institute of Radiation Oncology, University of Heidelberg Medical School and National Center for Tumor Diseases, German Cancer Research Center, Heidelberg (Germany); Campos, Benito; Gal, Zoltan; Unterberg, Andreas [Division of Neurological Research, Department of Neurosurgery, University of Heidelberg Medical School, Heidelberg (Germany); Debus, Jürgen [German Cancer Consortium, Heidelberg (Germany); Molecular and Translational Radiation Oncology, Heidelberg Ion Therapy Center, Heidelberg Institute of Radiation Oncology, University of Heidelberg Medical School and National Center for Tumor Diseases, German Cancer Research Center, Heidelberg (Germany); Herold-Mende, Christel [Division of Neurological Research, Department of Neurosurgery, University of Heidelberg Medical School, Heidelberg (Germany); Abdollahi, Amir, E-mail: a.amir@dkfz.de [German Cancer Consortium, Heidelberg (Germany); Molecular and Translational Radiation Oncology, Heidelberg Ion Therapy Center, Heidelberg Institute of Radiation Oncology, University of Heidelberg Medical School and National Center for Tumor Diseases, German Cancer Research Center, Heidelberg (Germany)

2016-05-01

Purpose: To investigate the radiosensitivity of primary glioma stem cell (GSC) cultures with different CD133 status in a 3-dimensional (3D) model after photon versus proton versus carbon irradiation. Methods and Materials: Human primary GSC spheroid cultures were established from tumor specimens of six consented glioblastoma patients. Human U87MG was used as a classical glioblastoma radioresistant cell line. Cell suspensions were generated by mechanical dissociation of GSC spheroids and embedded in a semi-solid 3D matrix before irradiation. Spheroid-like colonies were manually counted by microscopy. Cells were also recovered and quantified by fluorescence. CD133 expression and DNA damage were evaluated by flow cytometry. Results: The fraction of CD133{sup +} cells varied between 0.014% and 96% in the six GSC cultures and showed a nonsignificant correlation with plating efficiency and survival fractions. The 4 most photon-radioresistant GSC cultures were NCH644, NCH421k, NCH441, and NCH636. Clonogenic survival for proton irradiation revealed relative biologic effectiveness (RBE) in the range of 0.7-1.20. However, carbon irradiation rendered the photon-resistant GSC cultures sensitive, with average RBE of 1.87-3.44. This effect was partly attributed to impaired capability of GSC to repair carbon ion–induced DNA double-strand breaks as determined by residual DNA repair foci. Interestingly, radiosensitivity of U87 cells was comparable to GSC cultures using clonogenic survival as the standard readout. Conclusions: Carbon irradiation is effective in GSC eradication with similar RBE ranges approximately 2-3 as compared with non-stem GSC cultures (U87). Our data strongly suggest further exploration of GSC using classic radiobiology endpoints such as the here-used 3D clonogenic survival assay and integration of additional GSC-specific markers.

Radiosensitivity of Patient-Derived Glioma Stem Cell 3-Dimensional Cultures to Photon, Proton, and Carbon Irradiation

International Nuclear Information System (INIS)

Chiblak, Sara; Tang, Zili; Campos, Benito; Gal, Zoltan; Unterberg, Andreas; Debus, Jürgen; Herold-Mende, Christel; Abdollahi, Amir

2016-01-01

Purpose: To investigate the radiosensitivity of primary glioma stem cell (GSC) cultures with different CD133 status in a 3-dimensional (3D) model after photon versus proton versus carbon irradiation. Methods and Materials: Human primary GSC spheroid cultures were established from tumor specimens of six consented glioblastoma patients. Human U87MG was used as a classical glioblastoma radioresistant cell line. Cell suspensions were generated by mechanical dissociation of GSC spheroids and embedded in a semi-solid 3D matrix before irradiation. Spheroid-like colonies were manually counted by microscopy. Cells were also recovered and quantified by fluorescence. CD133 expression and DNA damage were evaluated by flow cytometry. Results: The fraction of CD133"+ cells varied between 0.014% and 96% in the six GSC cultures and showed a nonsignificant correlation with plating efficiency and survival fractions. The 4 most photon-radioresistant GSC cultures were NCH644, NCH421k, NCH441, and NCH636. Clonogenic survival for proton irradiation revealed relative biologic effectiveness (RBE) in the range of 0.7-1.20. However, carbon irradiation rendered the photon-resistant GSC cultures sensitive, with average RBE of 1.87-3.44. This effect was partly attributed to impaired capability of GSC to repair carbon ion–induced DNA double-strand breaks as determined by residual DNA repair foci. Interestingly, radiosensitivity of U87 cells was comparable to GSC cultures using clonogenic survival as the standard readout. Conclusions: Carbon irradiation is effective in GSC eradication with similar RBE ranges approximately 2-3 as compared with non-stem GSC cultures (U87). Our data strongly suggest further exploration of GSC using classic radiobiology endpoints such as the here-used 3D clonogenic survival assay and integration of additional GSC-specific markers.

Evaluation of critical resolved shear strength and deformation mode in proton-irradiated austenitic stainless steel using micro-compression tests

Energy Technology Data Exchange (ETDEWEB)

Jin, Hyung-Ha; Ko, Eunsol; Kwon, Junhyun; Hwang, Seong Sik [Nuclear Materials Safety Research Division, Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon, 305-353 (Korea, Republic of); Shin, Chansun, E-mail: c.shin@mju.ac.kr [Department of Materials Science and Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Youngin, Gyeonggi-do, 449-728 (Korea, Republic of)

2016-03-15

Micro-compression tests were applied to evaluate the changes in the strength and deformation mode of proton-irradiated commercial austenitic stainless steel. Proton irradiation generated small dots at low dose levels and Frank loops at high dose levels. The increase in critical resolved shear stresses (CRSS) was measured from micro-compression of pillars and the Schmid factor calculated from the measured loading direction. The magnitudes of the CRSS increase were in good agreement with the values calculated from the barrier hardening model using the measured size and density of radiation defects. The deformation mode changed upon increasing the irradiation dose level. At a low radiation dose level, work hardening and smooth flow behavior were observed. Increasing the dose level resulted in the flow behavior changing to a distinct heterogeneous flow, yielding a few large strain bursts in the stress–strain curves. The change in the deformation mode was related to the formation and propagation of defect-free slip bands. The effect of the orientation of the pillar or loading direction on the strengths is discussed.

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of Φ eq =3x10 15 cm -2 . The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Comparison of pad detectors produced on different silicon materials after irradiation with neutrons, protons and pions

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G., E-mail: Gregor.Kramberger@ijs.s [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia); Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute and Department of Physics, University of Ljubljana, SI-1000 Ljubljana (Slovenia)

2010-01-01

A set of 44 pad detectors produced on p- and n-type MCz and Fz wafers was irradiated with 23 GeV protons, 200 MeV pions and reactor neutrons up to the equivalent fluences of PHI{sub eq}=3x10{sup 15}cm{sup -2}. The evolution of the full depletion voltage and the leakage current were monitored during short- and long-term annealing. At selected representative annealing steps, charge collection measurements were performed for all samples with LHC speed electronics. Measurements of full depletion voltage, leakage current and charge collection efficiency were compared for different irradiation particles and silicon materials.

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Science.gov (United States)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

Establishment and Study of Dose Fields for the Irradiation of Experimental Animals with High-Energy Protons; Creation et Etude de Champs de Rayonnements pour l'Irradiation d'Animaux de Grande Taille par des Protons de Haute Energie; Sozdanie i issledovanie doznykh polej dlya oblucheniya ehksperimental'nykh zhivotnykh protonami bol'shoj ehnergii; Produccion y Estudio de Campos Radia Torios para la Exposicion de Animales de Laboratorio a Protones de Elevada Energia

Energy Technology Data Exchange (ETDEWEB)

Afanas' ev, V. P.; Keirim-Markus, I. B.; Kuznecova, S. S.; Litvinova, Je. G.; Sokolova, I. K.; Stukina, L. E.

1964-03-15

Present-day accelerators make it possible to obtain beams of protons which have adequate intensity but are not suitable for the general irradiation of large experimental animals. Using the synchrotron of the Joint Institute of Nuclear Research it has been shown that with the aid of absorbers it is possible to expand a proton beam to the dimensions required, without introducing the accompanying radiations. Dose fields, uniform within {+-} 10%, in which primary protons constitute between 99 and 88% of the tissue dose, were obtained for irradiation of dogs with protons of energy 510, 250 and 120 MeV. The tissue doses and the radiation composition were studied in a dog phantom. Irradiation conditions for ensuring uniform radiation of the dog's body are proposed. Various questions of high-energy proton dosimetry are discussed, and the use of different types of dosimeter are considered in this connection. The paper also describes a method of determining the contribution of cascade neutrons to the proton flux, using activation detectors. (author) [French] Les accelerateurs actuels permettent d'obtenir des faisceaux de protons d'une intensite suffisante mais impropres a l'irradiation generale de grands animaux d'experience. A l'aide du synchrocyclotron OIAI, on a montre que le recours aux absorbants permet d'elargir le faisceau de protons jusqu'aux dimensions voulues sans y introduire de rayonnements secondaires. Pour irradier des chiens par des protons de 510, 250 et 120 MeV, on a pu ainsi realiser des champs de rayonnements uniformes a {+-}10% pres, dans lesquels les protons primaires constituaient 99 a 88% de la dose tissulaire. Les auteurs ont etudie des doses tissulaires et la composition du rayonnement a l'interieur d'un fantome de chien. Ils indiquent dans quelles conditions on assure une irradiation uniforme du corps de l'animal. Les auteurs examinent plusieurs questions relatives a la dosimetrie des neutrons de grande energie. Ils justifient l'emploide divers

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Science.gov (United States)

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

2015-01-01

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

Hypofractionated high-energy proton-beam irradiation is an alternative treatment for WHO grade I meningiomas.

Science.gov (United States)

Vlachogiannis, Pavlos; Gudjonsson, Olafur; Montelius, Anders; Grusell, Erik; Isacsson, Ulf; Nilsson, Kristina; Blomquist, Erik

2017-12-01

Radiation treatment is commonly employed in the treatment of meningiomas. The aim of this study was to evaluate the effectiveness and safety of hypofractionated high-energy proton therapy as adjuvant or primary treatment for WHO grade I meningiomas. A total of 170 patients who received irradiation with protons for grade I meningiomas between 1994 and 2007 were included in the study. The majority of the tumours were located at the skull base (n = 155). Eighty-four patients were treated post subtotal resection, 42 at tumour relapse and 44 with upfront radiotherapy after diagnosis based on the typical radiological image. Irradiation was given in a hypofractionated fashion (3-8 fractions, usually 5 or 6 Gy) with a mean dose of 21.9 Gy (range, 14-46 Gy). All patients were planned for follow-up with clinical controls and magnetic resonance imaging scans at 6 months and 1, 2, 3, 5, 7 and 10 years after treatment. The median follow-up time was 84 months. Age, gender, tumour location, Simpson resection grade and target volume were assessed as possible prognostic factors for post-irradiation tumour progression and radiation related complications. The actuarial 5- and 10-year progression-free survival rates were 93% and 85% respectively. Overall mortality rate was 13.5%, while disease-specific mortality was 1.7% (3/170 patients). Older patients and patients with tumours located in the middle cranial fossa had a lower risk for tumour progression. Radiation-related complications were seen in 16 patients (9.4%), with pituitary insufficiency being the most common. Tumour location in the anterior cranial fossa was the only factor that significantly increased the risk of complications. Hypofractionated proton-beam radiation therapy may be used particularly in the treatment of larger World Health Organisation grade I meningiomas not amenable to total surgical resection. Treatment is associated with high rates of long-term tumour growth control and acceptable risk for

Volume-Dependent Expression of In-Field and Out-of-Field Effects in the Proton-Irradiated Rat Lung

NARCIS (Netherlands)

Coppes, Robert P.; Muijs, Christina T.; Faber, Hette; Gross, Sascha; Schippers, Jacobus M.; Brandenburg, Sytze; Langendijk, Johannes A.; van Luijk, Peter

2011-01-01

Purpose: To investigate whether occurance of early radiation effects in lung tissue depends on local close only. Methods and Materials: Twenty-five percent. 50%, 66%, 88%, or 100% of the rat lung was irradiated using single fractions of 150-MeV protons. For all volumes, in-field and out-of-field

Neutron irradiation facility and its characteristics

International Nuclear Information System (INIS)

Oyama, Yukio; Noda, Kenji

1995-01-01

A neutron irradiation facility utilizing spallation reactions with high energy protons is conceived as one of the facilities in 'Proton Engineering center (PEC)' proposed at JAERI. Characteristics of neutron irradiation field of the facility for material irradiation studies are described in terms of material damage parameters, influence of the pulse irradiation, irradiation environments other than neutronics features, etc., comparing with the other sorts of neutron irradiation facilities. Some perspectives for materials irradiation studies using PEC are presented. (author)

Proton implantation effect on (SUS-316) stainless steel

International Nuclear Information System (INIS)

Das, A.K.; Ishigami, R.; Kamal, I.

2015-01-01

Microstructural damage and nano hardness of the industrial grade stainless steel (SUS-316) have been studied under proton (H + ) implanted condition applying different doses at room temperature. The implantation scheme such as proton energy, fluence, irradiation time, and penetration depth in the target materials were estimated by Monte Carlo Simulation Code SRIM-2008. In the simulation, the parameters were chosen in such a way that the damage density (displacement per atom or dpa) would be uniform up to certain depth from the surface. X-ray diffraction study of the annealed samples prior to the proton implantation showed the austenitic fcc structure and no significant change was observed after proton implantation in it. Microstructural observation made by Scanning Transmission Electron Microscopy (STEM) revealed that 1 dpa of proton-irradiation induced the structural damage extended up to 1 μm depth from the surface. The nano hardness study showed that the hardness level of the irradiated samples increased monotonically with the irradiation doses. Proton dose of 1 dpa caused 65% increment of hardness level on average in case of uniformly irradiated samples. It was realized that the increment of hardness was a consequence of microstructural damages caused by the formation of interstitial dislocation loops in the sample matrix keeping the lattice structure unaffected

TSC measurements on proton-irradiated p-type Si-sensors

Energy Technology Data Exchange (ETDEWEB)

Donegani, Elena; Fretwurst, Eckhart; Garutti, Erika; Junkes, Alexandra [University of Hamburg (Germany)

2016-07-01

Thin n{sup +}p Si sensors are potential candidates for coping with neutron equivalent fluences up to 2.10{sup 16} n{sub eq}/cm{sup 2} and an ionizing dose in the order of a few MGy, which are expected e.g. for the HL-LHC upgrade. The aim of the present work is to provide experimental data on radiation-induced defects in order to: firstly, get a deeper understanding of the properties of hadron induced defects, and secondly develop a radiation damage model based on microscopic measurements. Therefore, the outcomes of Thermally Stimulated Current measurements on 200 μm thick Float-Zone (FZ) and Magnetic Czochralski (MCz) diodes will be shown, as a results of irradiation with 23 MeV protons and isothermal annealing. The samples were irradiated in the fluence range (0.3-1).10{sup 14} n{sub eq}/cm{sup 2}, so that the maximal temperature at which the TSC signal is still sharply distinguishable from the dark current is 200 K. In particular, special focus will be given to the defect introduction rate and to the issue of boron removal in p-type silicon. Annealing studies allow to distinguish which defects mainly contribute to the leakage current and which to the space charge, and thus correlate microscopic defects properties with macroscopic sensor properties.