Multilayer capacitors, method for making multilayer capacitors

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam

2018-03-06

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

Capacitor Discharge - A Capacitor Tutorial [video

OpenAIRE

Naval Postgraduate School Physics

2014-01-01

NPS Physics Physics Demonstrations Here's a capacitor discharge demonstrated by physicist Dr. Dernardo. Dr. D gives a nice capacitor lesson along with some fireworks. Charging and Discharging a Capacitor is dangerous. Do not try this at home. Dr. Bruce Denardo uses eleven 9V batteries, connected in series for a total of 99 creating a pretty large spark.

Fabrication and operation methods of a one-time programmable (OTP) nonvolatile memory (NVM) based on a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Cho, Seongjae; Lee, Junghoon; Jung, Sunghun; Park, Sehwan; Park, Byunggook

2011-01-01

In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system architecture model was to store central processing unit (CPU) instructions. By grafting the nanoscale fabrication technology and novel structuring onto the concept of the OTP memory, innovative high-density NVM appliances for mobile storage media may be possible. The program operation is performed by breaking down the thin oxide layer between the pn diode structure and the wordline (WL). The programmed state can be identified by an operation that reads the leakage currents through the broken oxide. Since the proposed OTP NVM is based on neither a transistor structure nor a charge storing mechanism, it is highly reliable and functional for realizing the ultra-large scale integration. The operation physics and the fabrication processes are also explained in detail.

Nanohybrid capacitor: the next generation electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Naoi, K. [Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8558 (Japan)

2010-10-15

Conventional electric double layer capacitors (EDLC) designed with two symmetrical activated carbon electrodes can deliver substantially more power than similar size Li-ion batteries. There is presently a major effort to increase the energy density of EDLC s up to a target value in the vicinity of 20-30 Wh kg{sup -1}.The present review article deals with the recent contributions to get this high energy density and new approaches that have been made to increase the withstanding voltage of the EDLCs. Important alternative approach to meet this goal that is under serious investigation is to develop an asymmetric (hybrid) capacitors. Hybrid capacitor systems are the promising approach to meet the goal to effectively increase the energy density. The investigation is to develop hybrid capacitors has been initiated by Li-ion capacitors. And, now Nanohybrid capacitor certainly achieves as high energy density as Li-ion capacitors with higher stability, higher safety and higher productivity. This is the new lithium-ion based hybrid capacitor using the lithium titanate (Li{sub 4}Ti{sub 5}O{sub 12}) negative intercalation electrode that can operate at unusually high current densities. The high-rate Li{sub 4}Ti{sub 5}O{sub 12} negative electrode has a unique nano-structure consisting of unusually small nano-crystalline Li{sub 4}Ti{sub 5}O{sub 12} nucleated and grafted onto carbon nano-fiber anchors (nc-Li{sub 4}Ti{sub 5}O{sub 12}/CNF). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60O3-Insulator (ZnO-Silicon Capacitors for Nonvolatile Applications

Directory of Open Access Journals (Sweden)

S. R. Krishnamoorthi

2013-01-01

Full Text Available In this work metal-ferroelectric-insulator-semiconductor (MFIS thin-film structures using Pb1.1Zr0.40Ti0.60O3 (PZT as the ferroelectric layer and zinc oxide (ZnO as the insulator layer were fabricated on n-type (100 Si substrate. Pb1.1Zr0.40Ti0.60O3 and ZnO thin films were prepared on Si by the sol-gel route and thermal deposition method, respectively. On the optimized PZT (140 nm and ZnO (40 nm films were examined by scanning electron microscope (SEM. From AFM data the root mean square (r.m.s. roughness of the film surface is 13.11 nm. The leakage current density of ZnO/n-Si (MIS structure was as low as 1.8 × 10−8 A/cm2 at 2.5 V. The capacitance versus voltage (C-V characteristics of the annealed ZnO/Si (MIS diode indicated the good interface properties and no hysteresis was observed. Au/PZT (140 nm/ZnO (40 nm/Si (100 leakage-current density was about 5.7 × 10−8 A/cm2 at positive bias voltage of 3 V. The large memory window width in C-V (capacitance-voltage curve of Au/PZT/ZnO/Si capacitor was about 2.9 V under ±12 V which thus possibly enables nonvolatile applications. The memory window as a function of temperature was also discussed.

Split-phase motor running as capacitor starts motor and as capacitor run motor

Directory of Open Access Journals (Sweden)

Yahaya Asizehi ENESI

2016-07-01

Full Text Available In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The magnitude of capacitor that will develop maximum torque in capacitor start motor and capacitor run motor are investigated and determined by simulation. Each of these capacitors is connected to the auxiliary winding of split-phase motor thereby transforming it into capacitor start or capacitor run motor. The starting current and starting torque of the split-phase motor (SPM, capacitor run motor (CRM and capacitor star motor (CSM are compared for their suitability in their operational performance and applications.

EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

Science.gov (United States)

Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

2011-06-01

that limiting the current during electroforming leads to the coexistence of two resistance switching modes in TiO2 memristive devices [2]. They also present spectromicroscopic observations and modelling results for the Joule heating during switching, providing insights into the ON/OFF switching process [3]. Researchers in Korea have examined in detail the mechanism of electronic bipolar resistance switching in the Pt/TiO2/Pt structure and show that degradation in switching performance of this system can be explained by the modified distribution of trap densities [4]. The issue also includes studies of TiO2 that demonstrate analog memory, synaptic plasticity, and spike-timing-dependent plasticity functions, work that contributes to the development of neuromorphic devices that have high efficiency and low power consumption [5]. In addition to enabling a wide range of data storage and logic applications, electroresistive non-volatile memories invite us to re-evaluate the long-held paradigms in the condensed matter physics of oxides. In the past three years, much attention has been attracted to polarization-mediated electronic transport [6, 7] and domain wall conduction [8] as the key to the next generation of electronic and spintronic devices based on ferroelectric tunnelling barriers. Typically local probe experiments are performed on an ambient scanning probe microscope platform under conditions of high voltage stresses, conditions highly conducive to electrochemical reactions. Recent experiments [9-13] suggest that ionic motion can heavily contribute to the measured responses and compete with purely physical mechanisms. Electrochemical effects can also be expected in non-ferroelectric materials such as manganites and cobaltites, as well as for thick ferroelectrics under high-field conditions, as in capacitors and tunnelling junctions where the ionic motion could be a major contributor to electric field-induced strain. Such strain, in turn, can affect the effective

Graphene-quantum-dot nonvolatile charge-trap flash memories

International Nuclear Information System (INIS)

Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

2014-01-01

Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

NARCIS (Netherlands)

With, de G.

1993-01-01

An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data

Non-volatile memory devices with redox-active diruthenium molecular compound

International Nuclear Information System (INIS)

Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

2016-01-01

Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

Nonvolatile Rad-Hard Holographic Memory

Science.gov (United States)

Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

2001-01-01

We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

Capacitor charging FET switcher with controller to adjust pulse width

Science.gov (United States)

Mihalka, Alex M.

1986-01-01

A switching power supply includes an FET full bridge, a controller to drive the FETs, a programmable controller to dynamically control final output current by adjusting pulse width, and a variety of protective systems, including an overcurrent latch for current control. Power MOSFETS are switched at a variable frequency from 20-50 kHz to charge a capacitor load from 0 to 6 kV. A ferrite transformer steps up the DC input. The transformer primary is a full bridge configuration with the FET switches and the secondary is fed into a high voltage full wave rectifier whose output is connected directly to the energy storage capacitor. The peak current is held constant by varying the pulse width using predetermined timing resistors and counting pulses. The pulse width is increased as the capacitor charges to maintain peak current. A digital ripple counter counts pulses, and after the desired number is reached, an up-counter is clocked. The up-counter output is decoded to choose among different resistors used to discharge a timing capacitor, thereby determining the pulse width. A current latch shuts down the supply on overcurrent due to either excessive pulse width causing transformer saturation or a major bridge fault, i.e., FET or transformer failure, or failure of the drive circuitry.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

Science.gov (United States)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

Electrically tuned super-capacitors

OpenAIRE

Chowdhury, Tazima S.; Grebel, Haim

2015-01-01

Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

Identification of nonvolatile compounds in clove (Syzygium aromaticum) from Manado

Science.gov (United States)

Fathoni, A.; Saepudin, E.; Cahyana, A. H.; Rahayu, D. U. C.; Haib, J.

2017-07-01

Syzygium aromaticum (clove) are native to Indonesia and have been widely used in food industry due to their flavor. Nonvolatile compounds contribute to flavor, mainly in their taste. Currently, there is very little information available about nonvolatile compounds in clove. Identification of nonvolatile compounds is important to improve clove's value. Compound extraction was conducted by maceration in ethanol. Fractionations of the extract were performed by using gravity column chromatography on silica gel and Sephadex LH-20 as stationary phase. Nonvolatile compounds were identified by Liquid Chromatography-Tandem Mass Spectrometry (LC-MS/MS). LC-MS/MS was operated in negative mode with 0.1 % formic acid in water and acetonitrile as mobile phase. Nonvolatile compounds were identified by fragment analysis and compared to references. Several compounds had been identified and characterized asquinic acid, monogalloylglucose, gallic acid, digalloylglucose, isobiflorin, biflorin, ellagic acid, hydroxygallic acid, luteolin, quercetin, naringenin, kaempferol, isorhamnetin, dimethoxyluteolin, and rhamnetin. These compounds had two main flavor perceptions, i.e. astringent, and bitter.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

Science.gov (United States)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Split-phase motor running as capacitor starts motor and as capacitor run motor

OpenAIRE

Yahaya Asizehi ENESI; Jacob TSADO; Mark NWOHU; Usman Abraham USMAN; Odu Ayo IMORU

2016-01-01

In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The ma...

Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

International Nuclear Information System (INIS)

Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

2010-01-01

We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

Science.gov (United States)

Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

2018-02-01

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Research on laser detonation pulse circuit with low-power based on super capacitor

Science.gov (United States)

Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

2018-03-01

According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

Vented Capacitor

Science.gov (United States)

Brubaker, Michael Allen; Hosking, Terry Alan

2006-04-11

A technique of increasing the corona inception voltage (CIV), and thereby increasing the operating voltage, of film/foil capacitors is described. Intentional venting of the capacitor encapsulation improves the corona inception voltage by allowing internal voids to equilibrate with the ambient environment.

Nonvolatile Memory Technology for Space Applications

Science.gov (United States)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Organic non-volatile memories from ferroelectric phase separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

2009-03-01

Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

International Nuclear Information System (INIS)

Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

2007-01-01

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

Strain-controlled nonvolatile magnetization switching

Science.gov (United States)

Geprägs, S.; Brandlmaier, A.; Brandt, M. S.; Gross, R.; Goennenwein, S. T. B.

2014-11-01

We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magnetometry. These measurements demonstrate a significant strain-induced change of the magnetization, limited by an inefficient strain transfer and domain formation in the particular system studied. To overcome these obstacles, we address practicable engineering concepts and use a model to demonstrate that a strain-controlled, nonvolatile magnetization switching should be possible in appropriately engineered ferromagnetic/piezoelectric actuator hybrids.

Capacitor assembly and related method of forming

Science.gov (United States)

Zhang, Lili; Tan, Daniel Qi; Sullivan, Jeffrey S.

2017-12-19

A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

Science.gov (United States)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

Mechanical states in wound capacitors

International Nuclear Information System (INIS)

Allen, J.J.; Reuter, R.C. Jr.

1989-01-01

The winding process is encountered frequently in manufacturing, such as winding of polymer films and paper, laminated pressure vessel construction, and the manufacture of wound capacitors. The winding of capacitors will typically involve hundreds of plies of conductor and dielectric wound over a core. Due to the large number of layers, the calculation of the mechanical studies within a wound capacitor is a significant computational task. The focus of Part II of this paper is the formulation and application of optimization techniques for the design of wound capacitors. The design criteria to be achieved is a specified uniform wound tension in a capacitor. The paper will formulate an optimization statement of the wound capacitor design problem, develop a technique for reducing the numerical calculation required to repeatedly analyze the capacitor as required by the optimization algorithm, and apply the technique to an example. 4 refs., 13 figs., 4 tabs

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Materials for electrochemical capacitors

Science.gov (United States)

Simon, Patrice; Gogotsi, Yury

2008-11-01

Electrochemical capacitors, also called supercapacitors, store energy using either ion adsorption (electrochemical double layer capacitors) or fast surface redox reactions (pseudo-capacitors). They can complement or replace batteries in electrical energy storage and harvesting applications, when high power delivery or uptake is needed. A notable improvement in performance has been achieved through recent advances in understanding charge storage mechanisms and the development of advanced nanostructured materials. The discovery that ion desolvation occurs in pores smaller than the solvated ions has led to higher capacitance for electrochemical double layer capacitors using carbon electrodes with subnanometre pores, and opened the door to designing high-energy density devices using a variety of electrolytes. Combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries. The use of carbon nanotubes has further advanced micro-electrochemical capacitors, enabling flexible and adaptable devices to be made. Mathematical modelling and simulation will be the key to success in designing tomorrow's high-energy and high-power devices.

Capacitor discharge engineering

CERN Document Server

Früngel, Frank B A

1976-01-01

High Speed Pulse Technology, Volume III: Capacitor Discharge Engineering covers the production and practical application of capacitor dischargers for the generation and utilization of high speed pulsed of energy in different forms. This nine-chapter volume discusses the principles of electric current, voltage, X-rays, gamma rays, heat, beams of electrons, neutrons and ions, magnetic fields, sound, and shock waves in gases and liquids. Considerable chapters consider the applications of capacitor discharges, such as impulse hardening of steel, ultrapulse welding of precision parts, X-ray flash t

A Two-terminal Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This letter proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. It is application independent and can be specified by rated...... voltage, ripple current, equivalent series resistance, and operational frequency range. The concept, control method, self-power scheme, and impedance characteristics of the active capacitor are presented. A case study of the proposed active capacitor for a capacitive DC-link application is discussed....... The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify the functionality of the proposed capacitor....

Nonvolatile memory design magnetic, resistive, and phase change

CERN Document Server

Li, Hai

2011-01-01

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

Fractal Structures For Fixed Mems Capacitors

KAUST Repository

Elshurafa, Amro M.

2014-08-28

An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

Fractal Structures For Fixed Mems Capacitors

KAUST Repository

Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

2014-01-01

An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

Switched-capacitor isolated LED driver

Science.gov (United States)

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

Science.gov (United States)

Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

2018-06-10

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory

International Nuclear Information System (INIS)

Wang Qin; Jia Rui; Guan Weihua; Li Weilong; Liu Qi; Hu Yuan; Long Shibing; Chen Baoqin; Liu Ming; Ye Tianchun; Lu Wensheng; Jiang Long

2008-01-01

In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed

Method for refreshing a non-volatile memory

Science.gov (United States)

Riekels, James E.; Schlesinger, Samuel

2008-11-04

A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

Fractal Structures For Mems Variable Capacitors

KAUST Repository

Elshurafa, Amro M.

2014-08-28

In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.

Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

DEFF Research Database (Denmark)

Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

2017-01-01

This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

Super miniaturization of film capacitor dielectrics

Science.gov (United States)

Lavene, B.

1981-01-01

The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

Fractal Structures For Mems Variable Capacitors

KAUST Repository

Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

2014-01-01

In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape

Faraday Rotator 5 kV Capacitor Bank

International Nuclear Information System (INIS)

Fetterman, C.C.

1975-01-01

A Faraday rotator 5 kV capacitor bank is a pulsed output power supply used to energize Faraday rotators for optical isolation in the ''LLL kJ Glass Laser System.'' Each supply contains either one, two or three parallel 240 μF storage capacitors depending on the size of the isolator used. Generally, the ''A*''(216 μH) isolator is energized with one capacitor, the ''A''(116 μH) isolator uses two capacitors and the ''B''(87 μH) isolator requires three capacitors. All models of isolators have been tested with four capacitors under maximum voltage and 25 feet of RG-217 cable with no hazardous effects. Except for the number of capacitors in each unit, the supplies are otherwise physically identical

Ferroelectric Fractional-Order Capacitors

KAUST Repository

Agambayev, Agamyrat; Patole, Shashikant P.; Farhat, Mohamed; Elwakil, Ahmed; Bagci, Hakan; Salama, Khaled N.

2017-01-01

Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

Ferroelectric Fractional-Order Capacitors

KAUST Repository

Agambayev, Agamyrat

2017-07-25

Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Electrostatically telescoping nanotube nonvolatile memory device

International Nuclear Information System (INIS)

Kang, Jeong Won; Jiang Qing

2007-01-01

We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition

Electromechanical capacitor for energy transfer

International Nuclear Information System (INIS)

Carroll, T.A.; Chowdhuri, P.; Marshall, J.

1983-01-01

Inductive energy transfer between two magnets can be achieved with almost 100% efficiency with a transfer capacitor. However, the bulk and cost will be high, and reliability low if conventional capacitors are used. A homopolar machine, used as a capacitor, will be compact and economical. A homopolar machine was designed with counter-rotating copper disks completely immersed in a liquid metal (NaK-78) to work as a pulse capacitor. Absence of solid-brush collectors minimized wear and frictional losses. Wetting of the copper disks throughout the periphery by the liquid metal minimized the resistive losses at the collector interface. A liquid-metal collector would, however, introduce hydrodynamic and magnetohydrodynamic losses. The selected liquid metal, e.g., NaK-78 will produce the lowest of such losses among the available liquid metals. An electromechanical capacitor of this design was tested at various dc magnetic fields. Its measured capacitance was about 100 farads at a dc magnetic field of 1.15 tesla

Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

Science.gov (United States)

Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

2013-07-01

We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

2013-01-01

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Science.gov (United States)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

International Nuclear Information System (INIS)

Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

2009-01-01

Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

Polyvinylidene fluoride film as a capacitor dielectric

Science.gov (United States)

Dematos, H. V.

1981-01-01

Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

Low-power non-volatile spintronic memory: STT-RAM and beyond

International Nuclear Information System (INIS)

Wang, K L; Alzate, J G; Khalili Amiri, P

2013-01-01

The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

The design of programme-controlled gain and linear pulse amplifier

International Nuclear Information System (INIS)

Guan Xuemei; Chen Chunkai; Northeast Normal Univ., Changchun; Qiao Shuang; Zhou Chuansheng

2006-01-01

The authors have designed a kind of new-style programme-controlled gain and linear pulse amplifier with accurate gausses of CR-RC-CR shaping circuit structure. The use of non-volatile digital electric potential device and accurate operational amplifier makes the circuit structure simple greatly, makes the ability stronger that resists assault. It can realize multistage gain in succession and make the drift of temperature low and make the linearity of pulse well. (authors)

Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node

Science.gov (United States)

Kar-Roy, Arjun; Hurwitz, Paul; Mann, Richard; Qamar, Yasir; Chaudhry, Samir; Zwingman, Robert; Howard, David; Racanelli, Marco

2012-06-01

Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commercially available TowerJazz CA18 0.18μm mixed-signal CMOS technology platform for advanced read-out integrated circuit (ROIC) applications. In his paper, new devices in development for commercial purposes and which may have applications in advanced ROICs are reported. First, results of buried-channel 3.3V field effect transistors (FETs) are detailed. The buried-channel pFETs show flicker (1/f) noise reductions of ~5X in comparison to surface-channel pFETs along with a significant reduction of the body constant parameter. The buried-channel nFETs show ~2X reduction of 1/f noise versus surface-channel nFETs. Additional reduced threshold voltage nFETs and pFETs are also described. Second, a high-density capacitor solution with a four-stacked linear (metal-insulator-metal) MIM capacitor having capacitance density of 8fF/μm2 is reported. Additional stacking with MOS capacitor in a 5V tolerant process results in >50fC/μm2 charge density. Finally, one-time programmable (OTP) and multi-time programmable (MTP) non-volatile memory options in the CA18 technology platform are outlined.

Mutual capacitor and its applications

Directory of Open Access Journals (Sweden)

Chun Li

2014-06-01

Full Text Available This study presents a new ac circuit element – the mutual capacitor, being a dual of the mutual inductor, which is also a new ac transformer. This element is characteristic of the mutual-capacitance coupling of a multi-capacitance system. A unity-coupled mutual capacitor works as an ideal current or voltage transformer, and incidentally acts as waveform separating when inductor employed or waveform converting from square-wave to quasi-sine or waveform filtering, between ports. As a transformer, the mutual capacitor is easy to design, easy for heat cooling, more accurate for current or voltage transformation, dissipating less energy as well as saving materials, suitable for high-power and high-voltage applications. Experiments to demonstrate performances of unity-coupled mutual capacitors are also given.

High density energy storage capacitor

International Nuclear Information System (INIS)

Whitham, K.; Howland, M.M.; Hutzler, J.R.

1979-01-01

The Nova laser system will use 130 MJ of capacitive energy storage and have a peak power capability of 250,000 MW. This capacitor bank is a significant portion of the laser cost and requires a large portion of the physical facilities. In order to reduce the cost and volume required by the bank, the Laser Fusion Program funded contracts with three energy storage capacitor producers: Aerovox, G.E., and Maxwell Laboratories, to develop higher energy density, lower cost energy storage capacitors. This paper describes the designs which resulted from the Aerovox development contract, and specifically addresses the design and initial life testing of a 12.5 kJ, 22 kV capacitor with a density of 4.2 J/in 3 and a projected cost in the range of 5 cents per joule

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Science.gov (United States)

Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

2016-07-01

Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

Physical and Electrical Characterization of Polymer Aluminum Capacitors

Science.gov (United States)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Physical and Electrical Characterization of Aluminum Polymer Capacitors

Science.gov (United States)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Nanostructured Electrode Materials for Electrochemical Capacitor Applications.

Science.gov (United States)

Choi, Hojin; Yoon, Hyeonseok

2015-06-02

The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013). Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

A programmable controller for constant primary peak current in capacitor charging fet switcher for nova

International Nuclear Information System (INIS)

Mihalka, A.

1983-01-01

New switching power supplies were designed for the 10 mm laser amplifiers in the Nova master oscillator room. The flashlamp supply must be repeatable. Therefore, the authors designed a constant current, linearly charging power supply. Since it is a capacitor, the load varies through-out the charge cycle. At first the load is great, and DI/DT of load current is at a maximum. As the capacitor charges the initial conditions for each cycle change, the power supply in effect sees a smaller capacitance, and DI/DT decreases. We need a way of gradually increasing the on-time of the current pulses so that the transistors in the power bridge are turned off when they reach their maximum peak current. The normal current sense response of the control chip is not fast enough to be useful for the application. The deadtime, or the time that all the bridge transistors are turned off, is fixed so that as the pulse width varies so does the period. We end up with a constant peak current, switching power supply whose frequency varies from 50 khz to 20 khz. Finally, an overcurrent latch protects the transistors from bridge or transformer faults. the circuit is described and results are shown

Evaluation of Recent Technologies of Nonvolatile RAM

Science.gov (United States)

Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

2008-08-01

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

A Simple, Successful Capacitor Lab

Science.gov (United States)

Ennis, William

2011-01-01

Capacitors are a fundamental component of modern electronics. They appear in myriad devices and in an enormous range of sizes. Although our students are taught the function and analysis of capacitors, few have the opportunity to use them in our labs.

Ferroelectric memories: A possible answer to the hardened nonvolatile question

International Nuclear Information System (INIS)

Messenger, G.C.; Coppage, F.N.

1988-01-01

Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI (Very Large-Scale Integration) manufacturing techniques which are basically nonvolatile and radiation hard. The memory can be made NDRO (Nondestructive Readout) for strategic systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems

Nanostructured Electrode Materials for Electrochemical Capacitor Applications

Directory of Open Access Journals (Sweden)

Hojin Choi

2015-06-01

Full Text Available The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013. Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

Capacitor performance limitations in high power converter applications

DEFF Research Database (Denmark)

El-Khatib, Walid Ziad; Holbøll, Joachim; Rasmussen, Tonny Wederberg

2013-01-01

High voltage low inductance capacitors are used in converters as HVDC-links, snubber circuits and sub model (MMC) capacitances. They facilitate the possibility of large peak currents under high frequent or transient voltage applications. On the other hand, using capacitors with larger equivalent...... series inductances include the risk of transient overvoltages, with a negative effect on life time and reliability of the capacitors. These allowable limits of such current and voltage peaks are decided by the ability of the converter components, including the capacitors, to withstand them over...... the expected life time. In this paper results are described from investigations on the electrical environment of these capacitors, including all the conditions they would be exposed to, thereby trying to find the tradeoffs needed to find a suitable capacitor. Different types of capacitors with the same voltage...

Electrical characterization of thin film ferroelectric capacitors

NARCIS (Netherlands)

Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

2006-01-01

Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

Role of Non-Volatile Memories in Automotive and IoT Markets

Science.gov (United States)

2017-03-01

Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

Organic Nonvolatile Memory Devices Based on Ferroelectricity

NARCIS (Netherlands)

Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Organic nonvolatile memory devices based on ferroelectricity

NARCIS (Netherlands)

Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Physics of failure based analysis of aluminium electrolytic capacitor

International Nuclear Information System (INIS)

Sahoo, Satya Ranjan; Behera, S.K.; Kumar, Sachin; Varde, P.V.; Ravi Kumar, G.

2016-01-01

Electrolytic capacitors are one of the important devices in various power electronic systems, such as motor drives, uninterruptible power supply, electric vehicles and dc power supply. Electrolytic capacitors are also the integral part of many other electronic devices. One of the primary function of electrolytic capacitors is the smoothing of voltage ripple and storing electrical energy. However, the electrolytic capacitor has the shortest lifespan of components in power electronics. Past experiences show that electrolytic capacitor tends to degrade and fail faster under high electrical or thermal stress conditions during operations. The primary failure mechanism of an electrolytic capacitor is the evaporation of the electrolyte due to electrical or thermal overstress. This leads to the drift in the values of two important parameters-capacitance and equivalent series resistance (ESR) of the electrolytic capacitor. An attempt has been made to age the electrolytic capacitor and validate the results. The overall goal is to derive the accurate degradation model of the electrolytic capacitor. (author)

Integrated capacitor arrangement for ultrahigh capacitance values

NARCIS (Netherlands)

Roozeboom, F.; Klootwijk, J.H.; Kemmeren, A.L.A.M.; Reefman, D.; Verhoeven, J.F.C.M.

2011-01-01

An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar

Capacitor requirements for controlled thermonuclear experiments and reactors

International Nuclear Information System (INIS)

Boicourt, G.P.; Hoffman, P.S.

1975-01-01

Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested. (U.S.)

Capacitor requirements for controlled thermonuclear experiments and reactors

International Nuclear Information System (INIS)

Boicourt, G.P.; Hoffman, P.S.

1975-01-01

Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested

Ferroelectric capacitor with reduced imprint

Science.gov (United States)

Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

1997-01-01

An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

International Nuclear Information System (INIS)

Yang, M; Bao, D H; Li, S W

2013-01-01

Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

Suspended graphene variable capacitor

OpenAIRE

AbdelGhany, M.; Mahvash, F.; Mukhopadhyay, M.; Favron, A.; Martel, R.; Siaj, M.; Szkopek, T.

2016-01-01

The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays compr...

Protection of large capacitor banks

International Nuclear Information System (INIS)

Sprott, J.C.; Lovell, T.W.

1982-06-01

Large capacitor banks, as used in many pulsed plasma experiments, are subject to catastrophic failure in the event of a short in the output or in an individual capacitor. Methods are described for protecting such banks to minimize the damage and down-time caused by such a failure

Capacitor discharges, magnetohydrodynamics, X-rays, ultrasonics

CERN Document Server

Früngel, Frank B A

1965-01-01

High Speed Pulse Technology, Volume 1: Capacitor Discharges - Magnetohydrodynamics - X-Rays - Ultrasonics deals with the theoretical and engineering problems that arise in the capacitor discharge technique.This book discusses the characteristics of dielectric material, symmetrical switch tubes with mercury filling, and compensation conductor forms. The transformed discharge for highest current peaks, ignition transformer for internal combustion engines, and X-ray irradiation of subjects in mechanical motion are also elaborated. This text likewise covers the transformed capacitor discharge in w

Method of manufacturing a shapeable short-resistant capacitor

Science.gov (United States)

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Capacitor blocks for linear transformer driver stages.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Kumpyak, E V; Smorudov, G V; Zherlitsyn, A A

2014-01-01

In the Linear Transformer Driver (LTD) technology, the low inductance energy storage components and switches are directly incorporated into the individual cavities (named stages) to generate a fast output voltage pulse, which is added along a vacuum coaxial line like in an inductive voltage adder. LTD stages with air insulation were recently developed, where air is used both as insulation in a primary side of the stages and as working gas in the LTD spark gap switches. A custom designed unit, referred to as a capacitor block, was developed for use as a main structural element of the transformer stages. The capacitor block incorporates two capacitors GA 35426 (40 nF, 100 kV) and multichannel multigap gas switch. Several modifications of the capacitor blocks were developed and tested on the life time and self breakdown probability. Blocks were tested both as separate units and in an assembly of capacitive module, consisting of five capacitor blocks. This paper presents detailed design of capacitor blocks, description of operation regimes, numerical simulation of electric field in the switches, and test results.

Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

KAUST Repository

Omran, Hesham

2016-04-21

Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\\\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

Multilayer ceramic capacitors for pulsed power, high temperature applications

International Nuclear Information System (INIS)

Cygan, S.; McLarney, J.; Prymak, J.; Bohn, P.

1991-01-01

The performance of the multilayer ceramic capacitors (MLC) in high frequency power applications has improved significantly over the last years. One of the possible applications of MLC capacitors is the automotive industry where repetitive discharging of capacitors is required. A 0.25-μF capacitor using NPO dielectric subjected to repetitive discharging with the rate of 700 pulses per second, magnitude of 600-V and 195-A peak currents showed no degradation in performance at 298 K or 398 K even after 1 billion discharge cycles. Less than a 5-K temperature rise was observed under these conditions. The most exciting, newly emerging utilization for MLC capacitors, however, might be the high temperature application (up to 473 K for underhood utilization), where ceramic capacitors with higher volumetric efficiency as compared to glass or polymer type capacitors prove very superior. Moreover ceramic capacitors, which next to glass capacitors exhibit the greatest radiation resistance among all insulating materials (Hanks and Hamman 1971), might also be best suited in the future for high temperature operation in space environment. The pulsed power performance of the 0.25-μF NPO capacitor was evaluated under repetitive discharge conditions (200 V, 700 pps) at high temperature, 473 K, and the results are presented in this paper

Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

KAUST Repository

Omran, Hesham; Alahmadi, Hamzah; Salama, Khaled N.

2016-01-01

Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

New Temperature-Insensitive Electronically-Tunable Grounded Capacitor Simulator

OpenAIRE

Abuelma'atti, Muhammad Taher; Khan, Muhammad Haroon

1996-01-01

A new circuit for simulating a grounded capacitor is presented. The circuit uses one operationalamplifier (OA), three operational-transconductance amplifiers (OTAs), and one capacitor. The realized capacitor is temperature-insensitive and electronically tunable. Experimental results are included.

Evaluation of Case Size 0603 BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2015-01-01

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

Electric field mapping inside metallized film capacitors

DEFF Research Database (Denmark)

Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

2015-01-01

(s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

Method of manufacturing a capacitor on a nanowire and integrated circuit having such a capacitor

NARCIS (Netherlands)

2009-01-01

A method of manufacturing a capacitor on a wafer, and an IC comprising such a capacitor is disclosed. The method comprises forming a plurality of vertical structures (140) each having a sub-micron thickness on the wafer; and growing a metal-insulator-metal (MIM) stack (150) over the plurality of

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

2012-01-01

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

Overview of emerging nonvolatile memory technologies.

Science.gov (United States)

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Overview of emerging nonvolatile memory technologies

Science.gov (United States)

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Protection of MOS capacitors during anodic bonding

Science.gov (United States)

Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

2002-07-01

We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

High power density capacitor and method of fabrication

Science.gov (United States)

Tuncer, Enis

2012-11-20

A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

Super capacitor modeling with artificial neural network (ANN)

Energy Technology Data Exchange (ETDEWEB)

Marie-Francoise, J.N.; Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, INRETS (LRE T31) 90 - Belfort (France)

2004-07-01

This paper presents super-capacitors modeling using Artificial Neural Network (ANN). The principle consists on a black box nonlinear multiple inputs single output (MISO) model. The system inputs are temperature and current, the output is the super-capacitor voltage. The learning and the validation of the ANN model from experimental charge and discharge of super-capacitor establish the relationship between inputs and output. The learning and the validation of the ANN model use experimental results of 2700 F, 3700 F and a super-capacitor pack. Once the network is trained, the ANN model can predict the super-capacitor behaviour with temperature variations. The update parameters of the ANN model are performed thanks to Levenberg-Marquardt method in order to minimize the error between the output of the system and the predicted output. The obtained results with the ANN model of super-capacitor and experimental ones are in good agreement. (authors)

Evaluation of Commercial Automotive-Grade BME Capacitors

Science.gov (United States)

Liu, Donhang

2014-01-01

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life.

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

Physicochemical assessment criteria for high-voltage pulse capacitors

Energy Technology Data Exchange (ETDEWEB)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

2016-12-15

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

Physicochemical assessment criteria for high-voltage pulse capacitors

International Nuclear Information System (INIS)

Darian, L. A.; Lam, L. Kh.

2016-01-01

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

A compact 100 kV high voltage glycol capacitor.

Science.gov (United States)

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Reliability-oriented Design of a Cost-effective Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This paper presents the reliability-oriented design of a two-terminal active capacitor proposed recently. The two-terminal active capacitor has the same level of convenience as a passive capacitor with reduced requirement of overall energy storage. In order to fully explore the potential...... of the proposed concept, a comprehensive design procedure is necessary to optimally sizing the key components of the active capacitor in terms of cost and reliability. Moreover, the inherent condition monitoring capability of the active capacitor is discussed by utilizing the existing feedback signals. A 500 W...

Active non-volatile memory post-processing

Energy Technology Data Exchange (ETDEWEB)

Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

2017-04-11

A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

Dielectric material options for integrated capacitors

NARCIS (Netherlands)

Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

2014-01-01

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

Science.gov (United States)

Sampson, Mike; Brusse, Jay

2018-01-01

Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

Science.gov (United States)

Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

2017-08-16

The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

Enhanced non-volatile and updatable holography using a polymer composite system.

Science.gov (United States)

Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

2012-03-12

Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

Efficiency Improvement of Capacitor Operation

Directory of Open Access Journals (Sweden)

V. P. Kashcheev

2010-01-01

Full Text Available A system of modernized capacitor ball-cleaning that prevents formation of depositions on internal capacitor tube surface has been developed in the paper.The system has been introduced at the Minsk TPP-4 (Power Block No.5. The paper presupposes that the economic effect will be nearly 0.43 million US dollars per year at one poer block with turbine Т-250/300-240.

Application of PFN capacitors in high power systems

International Nuclear Information System (INIS)

Parker, R.D.

1979-01-01

The application of lightweight reliable capacitors in a mobile energy store is discussed. The relationship of system design parameters to capacitor size and life is displayed. Electric fields and weights of a 21 J/lb and a 77 J/lb pulse discharge capacitor design are given. Estimates of future near-tern development are made

Infant-mortality testing of high-energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid-state large laser for inertial-confinement fusion research. Its flashlamps are driven by a 60-MJ capacitor bank. Part of this bank is being built with high-energy-density capacitors, 52-μF, 22 kV, 12.5 kJ. A total of 2645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant-mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection

Radiation-hardened nonvolatile MNOS RAM

International Nuclear Information System (INIS)

Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

1983-01-01

A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

International Nuclear Information System (INIS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-01-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

Energy Technology Data Exchange (ETDEWEB)

Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

2014-04-07

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Impact of Thyristors Controlled Series Capacitor Devices and Optimal Power Flow on Power Systems

Directory of Open Access Journals (Sweden)

Fatiha LAKDJA

2010-12-01

Full Text Available This paper presents an algorithm, for solving the Optimal Power Flow problem with flexible AC transmission systems (FACTS. The type of FACTS devices is used: thyristor-controlled series capacitor (TCSC. A method to determine the optimal location of thyristor controlled series compensators has been suggested. The proposed approaches have been implemented on an adapted IEEE 26 bus system. The simulation results are discussed to show the performance of the proposed algorithm and our “FACTS programmer “simulator technique, which are compared with TCSC and without TCSC.

Shapeable short circuit resistant capacitor

Science.gov (United States)

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2015-10-06

A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

Graphene-Based Flexible and Transparent Tunable Capacitors.

Science.gov (United States)

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Energy Efficient Graphene Based High Performance Capacitors.

Science.gov (United States)

Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

2017-07-10

Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

Pressure Effects Analysis of National Ignition Facility Capacitor Module Events

International Nuclear Information System (INIS)

Brereton, S; Ma, C; Newton, M; Pastrnak, J; Price, D; Prokosch, D

1999-01-01

Capacitors and power conditioning systems required for the National Ignition Facility (NIF) have experienced several catastrophic failures during prototype demonstration. These events generally resulted in explosion, generating a dramatic fireball and energetic shrapnel, and thus may present a threat to the walls of the capacitor bay that houses the capacitor modules. The purpose of this paper is to evaluate the ability of the capacitor bay walls to withstand the overpressure generated by the aforementioned events. Two calculations are described in this paper. The first one was used to estimate the energy release during a fireball event and the second one was used to estimate the pressure in a capacitor module during a capacitor explosion event. Both results were then used to estimate the subsequent overpressure in the capacitor bay where these events occurred. The analysis showed that the expected capacitor bay overpressure was less than the pressure tolerance of the walls. To understand the risk of the above events in NIF, capacitor module failure probabilities were also calculated. This paper concludes with estimates of the probability of single module failure and multi-module failures based on the number of catastrophic failures in the prototype demonstration facility

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Electrochemical capacitor

Science.gov (United States)

Anderson, Marc A.; Liu, Kuo -Chuan; Mohr, Charles M.

1999-10-05

An inexpensive porous metal oxide material having high surface area, good conductivity and high specific capacitance is advantageously used in an electrochemical capacitor. The materials are formed in a sol-gel process which affords control over the properties of the resultant metal oxide materials.

Switchable capacitor

NARCIS (Netherlands)

Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, H.A.C.; Tilmans, Hendrikus; De Raedt, Walter

2011-01-01

A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

Switchable capacitor

NARCIS (Netherlands)

Rottenberg, X.; Jansen, Henricus V.; Tilmans, H.A.C.; De Raedt, W.

2003-01-01

A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

Humidity Testing of PME and BME Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander A.; Herzberger, Jaemi

2014-01-01

Cracks in ceramic capacitors are one of the major causes of failures during operation of electronic systems. Humidity testing has been successfully used for many years to verify the absence of cracks and assure quality of military grade capacitors. Traditionally, only precious metal electrode (PME) capacitors were used in high reliability applications and the existing requirements for humidity testing were developed for this type of parts. With the advance of base metal electrode (BME) capacitors, there is a need for assessment of the applicability of the existing techniques for the new technology capacitors. In this work, variety of different PME and BME capacitors with introduced cracks were tested in humid environments at different voltages and temperatures. Analysis of the test results indicates differences in the behavior and failure mechanisms for BME and PME capacitors and the need for different testing conditions.

Reliability Evaluation of Power Capacitors in a Wind Turbine System

DEFF Research Database (Denmark)

Zhou, Dao; Blaabjerg, Frede

2018-01-01

With the increasing penetration of wind power, reliable and cost-effective wind energy production is of more and more importance. The doubly-fed induction generator based partial-scale wind power converter is still dominating in the existing wind farms. In this paper, the reliability assessment...... block diagram is used to bridge the gap between the Weibull distribution based component-level individual capacitor and the capacitor bank. A case study of a 2 MW wind power converter shows that the lifetime is significantly reduced from the individual capacitor to the capacitor bank. Besides, the dc...... of power capacitors is studied considering the annual mission profile. According to an electro-thermal stress evaluation, the time-to-failure distribution of both the dc-link capacitor and ac-side filter capacitor is detailed investigated. Aiming for the systemlevel reliability analysis, a reliability...

Fast risetime one megajoule capacitor bank

International Nuclear Information System (INIS)

Markins, D.; Baker, W.L.; Reinovsky, R.E.; Clark, J.G.

1976-01-01

A 100 kV, 1.1 MJ capacitor bank for plasma research experiments has been constructed for the Air Force Weapons Laboratory. The system consists of twenty, individual, low inductance capacitor modules, each utilizing a four element switch package approximately 2 meters wide. Each module contains twenty-four ''scyllac'' type 1.85 μF capacitors. A 100 kV output pulse is obtained by charging the top half of each module to +50 kV and the bottom half to -50 kV. A pressurized, low inductance multichannel switch package incorporating four separately triggered elements is designed to fit into the parallel plate transmission line system of the capacitor module. The bank is configured in a cross shape with twenty modules spaced uniformly around the perimeter of a parallel plate transmission line. The transmission line is constructed with 32 mil aluminum and insulated with 60 mils of mylar. The bank is designed to feed an easily replaceable central coaxial load. The entire system has been repeatedly fired at 100 kV with a dummy resistive load and has delivered 2.2 x 10 7 amperes of current with a risetime of 1.1 μsec. The total measured system inductance is 2.2 nH. This system represents a significant advance in the development of reliable, fast, high current capacitor banks

Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

Science.gov (United States)

Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

2018-09-01

In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

A 800 kV compact peaking capacitor for nanosecond generator.

Science.gov (United States)

Jia, Wei; Chen, Zhiqiang; Tang, Junping; Chen, Weiqing; Guo, Fan; Sun, Fengrong; Li, Junna; Qiu, Aici

2014-09-01

An extremely compact high voltage peaking capacitor is developed. The capacitor has a pancake structure with a diameter of 315 mm, a thickness of 59 mm, and a mass of 6.1 kg. The novel structural design endows the capacitor with a better mechanical stability and reliability under hundreds of kilovolts pulse voltage and an inner gas pressure of more than 1.5 MPa. The theoretical value of the capacitor self-inductance is near to 17 nH. Proved by series of electrical experiments, the capacitor can endure a high-voltage pulse with a rise time of about 20 ns, a half-width duration of around 25 ns, and an amplitude of up to 800 kV in a single shot model. When the capacitor was used in an electromagnetic pulse simulator as a peaking capacitor, the rise time of the voltage pulse can be reduced from 20 ns to less than 3 ns. The practical value of the capacitor's inductance deduced from the experimental date is no more than 25 nH.

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link.

Science.gov (United States)

Lee, Hyung-Min; Ghovanloo, Maysam

2013-10-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35- μ m 4-metal 2-poly standard CMOS process in 2.1 mm 2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μ F capacitors up to ±2 V in 420 μ s, achieving a high measured charging efficiency of 82%.

Development of High Temperature Capacitor Technology and Manufacturing Capability

Energy Technology Data Exchange (ETDEWEB)

None, None

2011-05-15

The goal of the Development of High Temperature Capacitor Technology and Manufacturing Capability program was to mature a production-ready supply chain for reliable 250°C FPE (fluorinated polyester) film capacitors by 2011. These high-temperature film capacitors enable both the down hole drilling and aerospace industries by enabling a variety of benefits including: - Deeper oil exploration in higher temperature and pressure environments - Enabling power electronic and control equipment to operate in higher temperature environments - Enabling reduced cooling requirements of electronics - Increasing reliability and life of capacitors operating below rated temperature - Enabling capacitors to handle higher electrical losses without overheating. The key challenges to bringing the FPE film capacitors to market have been manufacturing challenges including: - FPE Film is difficult to handle and wind, resulting in poor yields - Voltage breakdown strength decreases when the film is wound into capacitors (~70% decrease) - Encapsulation technologies must be improved to enable higher perature operation - Manufacturing and test cycle time is very long As a direct result of this program most of the manufacturing challenges have been met. The FPE film production metalization and winding yield has increased to over 82% from 70%, and the voltage breakdown strength of the wound capacitors has increased 270% to 189 V/μm. The high temperature packaging concepts are showing significant progress including promising results for lead attachments and hermetic packages at 200°C and non-hermetic packages at 250°C. Manufacturing and test cycle time will decrease as the market for FPE capacitors develops.

An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

International Nuclear Information System (INIS)

Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

2013-01-01

This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

International Nuclear Information System (INIS)

Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

2012-01-01

A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

PLZT capacitor on glass substrate

Science.gov (United States)

Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

2016-01-05

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Programmable controller with overcurrent latch for constant primary peak current in capacitor-charging FET switcher for Nova

International Nuclear Information System (INIS)

Mihalka, A.M.

1983-01-01

New switching power supplies were designed for the 10 mm laser amplifiers in the Nova Master Oscillator Room. The flashlamp supply must be repratable. Therefore, we designed a constant current, linearly charging power supply. Since it is a capacitor, the load varies throughout the charge cycle. At first the load is great, and di/dt of load current is at a maximum. As the capacitor charges the initial conditions for each cycle change, the power supply in effect sees a smaller capacitance, and di/dt decreases. We need a way of gradually increasing the on-time of the current pulses so that the transistors in the power bridge are turned off when they reach their maximum peak current. The normal current sense response of the control chip is not fast enough to be useful for our application. The deadtime, or the time that all the bridge transistors are turned off, is fixed so that as the pulse width varies so does the period. We end up with a constant peak current, switching power supply whose frequency varies from 50 khz to 20 khz. Finally, an overcurrent latch protects the transistors from bridge or transformer faults. The circuit is described and results are shown

BioCapacitor: A novel principle for biosensors.

Science.gov (United States)

Sode, Koji; Yamazaki, Tomohiko; Lee, Inyoung; Hanashi, Takuya; Tsugawa, Wakako

2016-02-15

Studies regarding biofuel cells utilizing biocatalysts such as enzymes and microorganisms as electrocatalysts have been vigorously conducted over the last two decades. Because of their environmental safety and sustainability, biofuel cells are expected to be used as clean power generators. Among several principles of biofuel cells, enzyme fuel cells have attracted significant attention for their use as alternative energy sources for future implantable devices, such as implantable insulin pumps and glucose sensors in artificial pancreas and pacemakers. However, the inherent issue of the biofuel cell principle is the low power of a single biofuel cell. The theoretical voltage of biofuel cells is limited by the redox potential of cofactors and/or mediators employed in the anode and cathode, which are inadequate for operating any devices used for biomedical application. These limitations inspired us to develop a novel biodevice based on an enzyme fuel cell that generates sufficient stable power to operate electric devices, designated "BioCapacitor." To increase voltage, the enzyme fuel cell is connected to a charge pump. To obtain a sufficient power and voltage to operate an electric device, a capacitor is used to store the potential generated by the charge pump. Using the combination of a charge pump and capacitor with an enzyme fuel cell, high voltages with sufficient temporary currents to operate an electric device were generated without changing the design and construction of the enzyme fuel cell. In this review, the BioCapacitor principle is described. The three different representative categories of biodevices employing the BioCapacitor principle are introduced. Further, the recent challenges in the developments of self-powered stand-alone biodevices employing enzyme fuel cells combined with charge pumps and capacitors are introduced. Finally, the future prospects of biodevices employing the BioCapacitor principle are addressed. Copyright © 2015 The Authors

Infant mortality testing of high energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid state large laser for inertial confinement fusion research. Its flashlamps are driven by a 60 MJ capacitor bank. Part of this bank is being built with high energy-density capacitors, 52 μF, 22 KV, 12.5 KJ. A total of 2,645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection. The test results were remarkably good. Less than 0.5 percent failed the pulse-discharge test and less than 2.5 percent were rejected overall

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

Directory of Open Access Journals (Sweden)

S. Maikap

2011-01-01

Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

DEFF Research Database (Denmark)

Christensen, Kåre Tais

2001-01-01

This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Simple Ways to Make Real Capacitors

Science.gov (United States)

Herman, Rhett

2014-01-01

Many of us have grabbed two pieces of aluminum foil and a paper towel, quickly sandwiched them together, and exclaimed in lecture, "Look! It's easy to make a capacitor!" Then we move on from there, calculating things such as capacitances with various dielectrics or plate sizes, the capacitance of capacitor networks, RC circuits,…

Cellulose Triacetate Dielectric Films For Capacitors

Science.gov (United States)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Modelling of storage of the photovoltaic energy by super-capacitors

International Nuclear Information System (INIS)

Camara, Mohamed Ansoumane

2011-01-01

The storage by ultra-capacitors of photovoltaic energy is modeled in order to have an accurate and accessible model to integrate ultra-capacitors into solar energy conversion systems. Ultra-capacitors are modeled by a multi-branch circuit representation composed of resistors and capacitors with variable voltage whose values are determined by an accurate characterization experiment. Moreover, all the elements of a typical photovoltaic energy conversion system are modeled by using the Matlab/Simulink software (solar radiation, photovoltaic arrays, regulator, batteries and charges). The energy storage model by ultra-capacitors is then validated by the good agreement of measured values taken in real conditions with the results provided by simulations. Finally, two examples are proposed and discussed: the determination of the storage duration of ultra-capacitors versus solar irradiance and ambient temperature, and the integration of ultra-capacitors in the electrical feeding system of a DC motor to reduce the electrical current peak of the battery at the start of the motor. (author) [fr

Reliability of capacitors for DC-link applications - An overview

DEFF Research Database (Denmark)

Wang, Huai; Blaabjerg, Frede

2013-01-01

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of DC-link in power electronic converters...... from two aspects: 1) reliability-oriented DC-link design solutions; 2) conditioning monitoring of DC-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their DC-link applications....

Two-Capacitor Problem: A More Realistic View.

Science.gov (United States)

Powell, R. A.

1979-01-01

Discusses the two-capacitor problem by considering the self-inductance of the circuit used and by determining how well the usual series RC circuit approximates the two-capacitor problem when realistic values of L, C, and R are chosen. (GA)

Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

Science.gov (United States)

Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

2016-09-19

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Physics Based Modeling and Prognostics of Electrolytic Capacitors

Science.gov (United States)

Kulkarni, Chetan; Ceyla, Jose R.; Biswas, Gautam; Goebel, Kai

2012-01-01

This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

A Humidity-Dependent Lifetime Derating Factor for DC Film Capacitors

DEFF Research Database (Denmark)

Wang, Huai; Reigosa, Paula Diaz; Blaabjerg, Frede

2015-01-01

accelerated testing of film capacitors under different humidity conditions, enabling a more justified lifetime prediction of film capacitors for DC-link applications under specific climatic environments. The analysis of the testing results and the detailed discussion on the derating factor with different......Film capacitors are widely assumed to have superior reliability performance than Aluminum electrolytic capacitors in DC-link design of power electronic converters. However, the assumption needs to be critically judged especially for applications under high humidity environments. This paper proposes...... a humidity-dependent lifetime derating factor for a type of plastic-boxed metallized DC film capacitors. It overcomes the limitation that the humidity impact is not considered in the state-of-the-art DC film capacitor lifetime models. The lifetime derating factor is obtained based on a total of 8,700 hours...

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan

2016-03-16

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

2016-01-01

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

MOSFET and MOS capacitor responses to ionizing radiation

Science.gov (United States)

Benedetto, J. M.; Boesch, H. E., Jr.

1984-01-01

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Pseudo-capacitor device for aqueous electrolytes

Science.gov (United States)

Prakash, Jai; Thackeray, Michael M.; Dees, Dennis W.; Vissers, Donald R.; Myles, Kevin M.

1998-01-01

A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A.sub.2 ›B.sub.2-x Pb.sub.x !O.sub.7-y, where A=Pb, Bi, and B=Ru, Ir, and Ocapacitor. The amount of expensive ruthenate and iridium can be substantially reduced in the pseudo-capacitor by increasing the lead content while improving energy storage capacity.

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

National Research Council Canada - National Science Library

Likharev, Konstantin K; Ma, Tso-Ping

2006-01-01

.... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

Radiation effects in polycarbonate capacitors

Directory of Open Access Journals (Sweden)

Vujisić Miloš

2009-01-01

Full Text Available The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged.

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

Fabrication of wound capacitors using flexible alkali-free glass

International Nuclear Information System (INIS)

Wilke, Rudeger H. T.; Baker, Amanda; Brown-Shaklee, Harlan; Johnson-Wilke, Raegan; Hettler, Chad

2016-01-01

Here, alkali-free glasses, which exhibit high energy storage densities (~35 J/cc), present a unique opportunity to couple high temperature stability with high breakdown strength, and thus provide an avenue for capacitor applications with stringent temperature and power requirements. Realizing the potential of these materials in kilovolt class capacitors with >1 J/cc recoverable energy density requires novel packaging strategies that incorporate these extremely fragile dielectrics. In this paper, we demonstrate the feasibility of fabricating wound capacitors using 50-μm-thick glass. Two capacitors were fabricated from 2.8-m-long ribbons of thin (50 μm) glass wound into 125-140-mm-diameter spools. The capacitors exhibit a capacitance of 70-75 nF with loss tangents below 1%. The wound capacitors can operate up to 1 kV and show excellent temperature stability to 150 °C. By improving the end terminations, the self-resonance can be shifted to above 1 MHz, indicating that these materials may be useful for pulsed power applications with microsecond discharge times.

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Directory of Open Access Journals (Sweden)

H. H. Y. Cheung

2016-07-01

Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

Nonmedical application of computed tomography to power capacitor quality assesment

International Nuclear Information System (INIS)

Kruger, R.P.

1981-01-01

Present research and development efforts at Los Alamos Scientific Laboratory require the design and use of high-efficiency rapid-discharge energy storage capacitors for laser isotope separation and plasma physics programs. In these applications, capacitors are subjected to electrical, mechanical, thermal, and other environmental stresses. These stresses cause the dielectric constant to change due to gasification from arcing at nonsoldering connections, which produce a chemical reduction of the dielectric material. This effectively limits the lifetime of the capacitor. The programs mentioned above require capacitors with a multikilohertz frequency response at a current of tens of kiloamperes and a voltage of at least 100 kV. The lifetime of such capacitors should exceed 10 10 charge/discharge cycles. Such capacitors do not presently exist. The exploration of new capacitor designs will require the use of both electrical functional tests and tests that show the changes in internal physical structure as the capacitor is repeatedly stressed by the charge/discharge cycle. The integration of electrical and structural tests throughout the life cycle of a candidate capacitor makes it imperative that the structural integrity tests be nondestructive. Computed tomography (CT) makes this integration possible. The work reported here is the result of a pilot project designed to show the potential use of CT for this application. This work includes visualization of material defects using both a layered sequence of conventional tomographic slices and orthogonal multiangular pseudoradiographs generated from these slices

Li-Ion, Ultra-capacitor Based Hybrid Energy Module

National Research Council Canada - National Science Library

Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

2007-01-01

.... To determine the optimum utilization of ultra-capacitors in applications where high power density and high energy density are required, an optimized Li-Ion/Ultra-capacitor Hybrid Energy Module (HEM...

A light-powered bio-capacitor with nanochannel modulation.

Science.gov (United States)

Rao, Siyuan; Lu, Shanfu; Guo, Zhibin; Li, Yuan; Chen, Deliang; Xiang, Yan

2014-09-03

An artificial bio-capacitor system is established, consisting of the proton-pump protein proteorhodopsin and a modified alumina nanochannel, inspired by the capacitor-like behavior of plasma membranes realized through the cooperation of ion-pump and ion-channel proteins. Capacitor-like features of this simplified system are realized and identified, and the photocurrent duration time can be modulated by nanochannel modification to obtain favorable square-wave currents. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method of making dielectric capacitors with increased dielectric breakdown strength

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

2017-05-09

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Microprocessor Controlled Capacitor Bank Switching System for ...

African Journals Online (AJOL)

In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

Design exploration of emerging nano-scale non-volatile memory

CERN Document Server

Yu, Hao

2014-01-01

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

International Nuclear Information System (INIS)

Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

2016-01-01

The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

Comparison of MOS capacitor and transistor postirradiation response

International Nuclear Information System (INIS)

McWhorter, P.J.; Fleetwood, D.M.; Pastorek, R.A.; Zimmerman, G.T.

1989-01-01

The postirradiation response of MOS capacitors and transistors fabricated on the same chip has been examined as a function of dose and anneal bias. A variety of analysis techniques are used to evaluate the postirradiation response of these structures, including low and high frequency capacitance-voltage techniques, subthreshold current-voltage techniques, and charge pumping. Though there are changes in the postirradiation energy spectrum of ΔD it , no clear evidence of defect transformation is observed on transistors or capacitors under any conditions examined. Postirradiation response at 80 degrees C is found to be similar in the two structures for low levels of damage (100 krad). For both structures, interface-trap densities continue to grow following irradiation under these conditions. In contrast, the postirradiation response of capacitors and transistors can differ qualitatively at higher levels of damage (1 Mrad), with interface-traps increasing postirradiation at 80 degrees C for transistors and annealing for capacitors. These results indicate that capacitor structures may not be suitable for hardness assurance studies that involve elevated temperature irradiations or postirradiation anneals

Study of electric capacitors using Finite Element Method

Directory of Open Access Journals (Sweden)

Alina Neamț

2012-12-01

Full Text Available A capacitor is made of two armatures and a dielectric between the two armatures. In this paper, we are going to study the plane capacitor , which is made of two equal metal armatures, plane and parallel, having the S surface, situated at a distance d much shorter than the armatures dimensions, between which there is a liniar, homogenous and isotropic dielectric having a constant electrical permittivity.The purpose of studying the plane capacitor, through MEF, presented in this paper,is to establish the stress to which the dielectrics may be subject to, in daily practice, and the influence that their superposition in an electric field has, on each of them. The study of the plane capacitor , finalised with observations on the raise of the dependence of the electric field intensity in air on the size of the air layer and having as parameter the type of dielectric material introduced between the armatures, is an example of confirmation or invalidation of the possibility and utility of using layers of dielectrics between the armatures of the capacitors.

Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

Science.gov (United States)

Liu, David (Donghang)

2011-01-01

This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life

Rotary capacitor

CERN Multimedia

CERN PhotoLab

1971-01-01

The rotating wheel of the rotary capacitor representing the most critical part of the new radio-frequency system of the synchro-cyclotron. The three rows of teeth on the circumference of the wheel pass between four rows of stator blades with a minimum clearance of 1 mm at a velocity of 1700 rev/min.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

Institute of Scientific and Technical Information of China (English)

Young; Tea; Chun; Daping; Chu

2015-01-01

Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

ZnO as dielectric for optically transparent non-volatile memory

International Nuclear Information System (INIS)

Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

2009-01-01

This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

Liquid Crystals of Lithium Dodecylbenzenesulfonate for Electric Double Layer Capacitors

International Nuclear Information System (INIS)

Kuzmin, Andrey Vasil’evich; Yurtov, Evgeny V.

2016-01-01

Ionic lyotropic liquid crystals based on lithium dodecylbenzenesulfonate were used as electrolytes for electric double layer capacitors with carbon fibrous electrodes. The capacitors were tasted by cyclic voltammetry, galvanostatic charge and discharge, and impedance spectroscopy. The highest specific capacitance was achieved for electrical double layer capacitor equipped with ionic lyotropic liquid crystal of lithium dodecylbenzenesulfonate 35 wt% in water. The specific capacitance of capacitor was calculated from galvanostatic discharge curves – 15 F/g of carbon fibrous material

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed

2012-10-06

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

2012-01-01

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Effect of capacitor loss on discharging characteristics of xenon flash lamp

International Nuclear Information System (INIS)

Zhang Chu; Lin Dejiang; Xu Chunmei; Shen Hongbin; Chen Xiaohan

2012-01-01

The effect of storage capacitor's loss on the discharging characteristics of the xenon flash lamp was studied, and the xenon flash lamp discharging circuit was analyzed and improved. The capacitor can be equivalent to a series of an ideal capacitor and loss resistance. The improved formula of the xenon lamp discharging characteristics was given when actual capacitance loss is not zero, and the xenon lamp discharging current and discharging power are calculated and analyzed in detail with the increase of the capacitor loss. The results show that the increase of loss will lead to the decrease of xenon lamp discharging current and peak power and the xenon lamp flash time, and influence laser pumping efficiency. The loss will also lead to the capacitor inverse charging in LC discharging circuit; this will influence normal working of the capacitor and decrease the lift of the xenon lamp. The actual energy storage capacitor charging and discharging experiments show that the increase of capacitor loss will lead to the decrease of xenon lamp light-emitting waveform peak, shortening of the flash time and increase of the electrode sputter, thus verity, the reasonableness of theoretical analysis. In addition, the experiments show that environmental factors have very significant impact on the increase of the storage capacitor loss. (authors)

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser

2012-03-21

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance non-volatile organic ferroelectric memory on banknotes.

Science.gov (United States)

Khan, M A; Bhansali, Unnat S; Alshareef, H N

2012-04-24

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Phase change materials in non-volatile storage

OpenAIRE

Ielmini, Daniele; Lacaita, Andrea L.

2011-01-01

After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

Electrically and thermally activated ageing mechanisms in metallised polymer film capacitors

International Nuclear Information System (INIS)

Lee, Yuen Pen

2001-01-01

This dissertation describes a combined computational and experimental study to understand the fundamental electrostatic, thermal, electromagnetic, and discharge related processes during the ageing of metallised polymer film capacitors. In the event of internal breakdowns, these capacitors are capable of 'self-healing' through a controlled isolation of defects on the electrode surfaces by mosaic patterning the electrode. The objective of this project is to develop viable computer models to unravel electrothermally activated ageing processes in capacitors. To provide the necessary validation to any capacitor models developed, our work is supported by comprehensive experiments including industrial standard accelerated life tests and associated breakdown damage analyses of tested capacitors. These have enabled an empirical identification of main factors affecting the reliability and lifetime of capacitors. Relevant raw data and the qualitative picture enabled by these data are crucial to the development and refinement of viable computational models of capacitors. Given the complexity of ageing processes, it is both very difficult and unnecessary to develop a one-for-all model that describes indiscriminately all relevant processes. The approach adapted in this work has been to prioritise key ageing processes and modularise each process with its own computer model. The overall picture of capacitor ageing can then be unravelled by integrating all modules together. For instance, the fine geometrical features of the electrode mosaic pattern and the capacitor's laminated structure have been assessed through a concept of field intensification using a 2D electrostatic finite element computation. With fine geometrical features accounted for by the field intensification concept, fast electric events in capacitors can be simulated using a simple equivalent circuit model. Similar assessment of heat transfer has led to an equally efficient modelling of thermal events in capacitors

Practical Considerations of the Start-up Procedure for an Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Qian; Geng, Tao

2017-01-01

Capacitive DC links provide the only low-impedance current path connected with an input source during the start-up of many voltage source converters. A soft-start circuit is usually implemented to limit the inrush current. A two-terminal active capacitor is recently proposed which can directly...... replace conventional passive capacitors in DC links, with reduced cost or size for a given application. The active capacitor has the same level of convenience with two power terminals only as a passive capacitor. This paper proposes two start-up schemes for the active capacitor to overcome the drawbacks...... of existing methods previously widely used for passive capacitors. One scheme is based on a trade-off design between the start-up performance and the component sizing of the active capacitor. The other scheme is based on either an additional bypass switch together with the existing soft-start circuit...

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Reliability of high-voltage pulse capacitors operating in large energy storages

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

1982-01-01

To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

Evaluation of reinitialization-free nonvolatile computer systems for energy-harvesting Internet of things applications

Science.gov (United States)

Onizawa, Naoya; Tamakoshi, Akira; Hanyu, Takahiro

2017-08-01

In this paper, reinitialization-free nonvolatile computer systems are designed and evaluated for energy-harvesting Internet of things (IoT) applications. In energy-harvesting applications, as power supplies generated from renewable power sources cause frequent power failures, data processed need to be backed up when power failures occur. Unless data are safely backed up before power supplies diminish, reinitialization processes are required when power supplies are recovered, which results in low energy efficiencies and slow operations. Using nonvolatile devices in processors and memories can realize a faster backup than a conventional volatile computer system, leading to a higher energy efficiency. To evaluate the energy efficiency upon frequent power failures, typical computer systems including processors and memories are designed using 90 nm CMOS or CMOS/magnetic tunnel junction (MTJ) technologies. Nonvolatile ARM Cortex-M0 processors with 4 kB MRAMs are evaluated using a typical computing benchmark program, Dhrystone, which shows a few order-of-magnitude reductions in energy in comparison with a volatile processor with SRAM.

Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

Energy Technology Data Exchange (ETDEWEB)

Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

2013-04-30

A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

Iodine encapsulation in CNTs and its application for electrochemical capacitor

International Nuclear Information System (INIS)

Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S.; Rashid, M.; Syakirin, A.

2016-01-01

We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

Iodine encapsulation in CNTs and its application for electrochemical capacitor

Energy Technology Data Exchange (ETDEWEB)

Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S., E-mail: kawasaki.shinji@nitech.ac.jp [Nagoya Institute of Technology, Gokiso, Showa, Nagoya, Aichi (Japan); Rashid, M.; Syakirin, A. [Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

Improving the mechanical stability of a standard capacitor

CSIR Research Space (South Africa)

Moodley, SS

2003-04-01

Full Text Available temperature coefficients of capacitance, they were susceptible to mechanical shock. During 1999, a project was initiated to improve the mechanical stability of the capacitors after two capacitors were damaged during transit, while being transported as separate...

Cellulose triacetate, thin film dielectric capacitor

Science.gov (United States)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

Science.gov (United States)

Liu, David (Donhang); Sampson, Michael J.

2011-01-01

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the

Charge retention characteristics of (Bi,La)4Ti3O12 capacitors : comparison with Pb(Zr,Ti)O3 capacitors

International Nuclear Information System (INIS)

Yoon, J. G.; Kim, D. J.; So, Y. W.

2005-01-01

We investigated the retention characteristics of (Bi,La) 4 Ti 3 O 12 (BLT) capacitors with Pt electrodes and compared them with Pb(Zr,Ti)O 3 (PZT) capacitors in the same- and opposite-state retentions. Polarization relaxations in short-time regime (t < 100 s) were well described by a power-law decay function, but the polarization relaxation of BLT was more significant than that of PZT. We discuss the difference in the relaxation process of polarization in conjunction with film microstructures and magnitudes of polarization for BLT and PZT. In long-time opposite-state retention, BLT capacitors showed much better characteristics than PZT. For both BLT and PZT, the opposite-state retention loss was governed by the development of an internal field during retention. For BLT capacitors, internal field development was much weaker than for PZT after retention, resulting in a good opposite-state retention. Structural and electrical properties are discussed in conjunction with the retention characteristics of the materials.

Degradation failure model of self-healing metallized film pulse capacitor

International Nuclear Information System (INIS)

Sun Quan; Zhong Zheng; Zhou Jinglun; Zhao Jianyin; Wei Xiaofeng; Guo Liangfu; Zhou Pizhang; Li Yizheng; Chen Dehuai

2004-01-01

The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability and expense are straightforwardly affected by the reliability level of the capacitors. Based on the related research in literature, this paper analyses the degradation mechanism of the capacitor, and presents a new degradation failure model--the Gauss-Poisson model. The Gauss-Poisson model divides degradation of capacitor into naturalness degradation and outburst one. Compared with traditional Weibull failure model, the new model is more precise in evaluating the lifetime of the capacitor, and the life tests for this model are simple in design, and lower in the cost of time or expense. The Gauss-Poisson model will be a fine and widely used degradation disable model. (author)

An Active Capacitor with Self-Power and Internal Feedback Control Signals

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This paper proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. A control strategy that does not require any external feedback...... signal is proposed and a self-power scheme for gate drivers and the controller is applied to achieve the two-terminal active capacitor. The concept, control method, self-power scheme, efficiency, and impedance characteristics of the active capacitor are presented. A case study of the proposed active...... capacitor for a capacitive DC-link application is discussed. The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify...

Metal-organic molecular device for non-volatile memory storage

International Nuclear Information System (INIS)

Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

2014-01-01

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

Dynamics of a Liquid Dielectric Attracted by a Cylindrical Capacitor

Science.gov (United States)

Nardi, Rafael; Lemos, Nivaldo A.

2007-01-01

The dynamics of a liquid dielectric attracted by a vertical cylindrical capacitor are studied. Contrary to what might be expected from the standard calculation of the force exerted by the capacitor, the motion of the dielectric is different depending on whether the charge or the voltage of the capacitor is held constant. The problem turns out to…

Experimental analysis of an MIM capacitor with a concave shield

International Nuclear Information System (INIS)

Liu Lintao; Yu Mingyan; Wang Jinxiang

2009-01-01

A novel shielding scheme is developed by inserting a concave shield between a metal-insulator-metal (MIM) capacitor and the silicon substrate. Chip measurements reveal that the concave shield improves the quality factor by 11% at 11.8 GHz and 14% at 18.8 GHz compared with an unshielded MIM capacitor. It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer. Moreover, because the concave shields simplify substrate modeling, a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.

Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

Directory of Open Access Journals (Sweden)

M. S. T. Barroso

2011-06-01

Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

Trench capacitor and method for producing the same

NARCIS (Netherlands)

2009-01-01

A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to

Charging damage in floating metal-insulator-metal capacitors

NARCIS (Netherlands)

Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

2002-01-01

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

Clocking Scheme for Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1998-01-01

A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Directory of Open Access Journals (Sweden)

Shuxiang Wu

2013-12-01

Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Cracking Problems and Mechanical Characteristics of PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2018-01-01

Most failures in MLCCs are caused by cracking that create shorts between opposite electrodes of the parts. A use of manual soldering makes this problem especially serious for space industry. Experience shows that different lots of ceramic capacitors might have different susceptibility to cracking under manual soldering conditions. This simulates a search of techniques that would allow revealing capacitors that are most robust to soldering-induced stresses. Currently, base metal electrode (BME) capacitors are introduced to high-reliability applications as a replacement of precious metal electrode (PME) parts. Understanding the difference in the susceptibility to cracking between PME and BME capacitors would facilitate this process. This presentation gives a review of mechanical characteristics measured in-situ on MLCCs that includes flexural strength, Vickers hardness, indentation fracture toughness, and the board flex testing and compare characteristics of BME and PME capacitors. A history case related to cracking in PME capacitors that caused flight system malfunctions and mechanisms of failure are considered. Possible qualification tests that would allow evaluation of the resistance of MLCCs to manual soldering are suggested and perspectives related to introduction of BME capacitors discussed.

Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature-Pressure-Strain Sensing.

Science.gov (United States)

Jin, Hanbyul; Jung, Sungchul; Kim, Junhyung; Heo, Sanghyun; Lim, Jaeik; Park, Wonsang; Chu, Hye Yong; Bien, Franklin; Park, Kibog

2017-09-07

We introduce a new type of multi-functional capacitive sensor that can sense several different external stimuli. It is fabricated only with polydimethylsiloxane (PDMS) films and silver nanowire electrodes by using selective oxygen plasma treatment method without photolithography and etching processes. Differently from the conventional single-capacitor multi-functional sensors, our new multi-functional sensor is composed of two vertically-stacked capacitors (dual-capacitor). The unique dual-capacitor structure can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction, and it can also detect the surface-normal directionality of curvature, pressure, and touch. Meanwhile, the conventional single-capacitor sensor has ambiguity in distinguishing curvature and pressure and it can detect only the strength of external stimulus. The type, directionality, and strength of external stimulus can be determined based on the relative capacitance changes of the two stacked capacitors. Additionally, the logical flow reflected on a tree structure with its branches reaching the direction and strength of the corresponding external stimulus unambiguously is devised. This logical flow can be readily implemented in the sensor driving circuit if the dual-capacitor sensor is commercialized actually in the future.

Capacitance-voltage characterization of fully silicided gated MOS capacitor

International Nuclear Information System (INIS)

Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

2009-01-01

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

Transmission Line Resonator Segmented with Series Capacitors

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

2016-01-01

Transmission line resonators are often used as coils in high field MRI. Due to distributed nature of such resonators, coils based on them produce inhomogeneous field. This work investigates application of series capacitors to improve field homogeneity along the resonator. The equations for optimal...... values of evenly distributed capacitors are presented. The performances of the segmented resonator and a regular transmission line resonator are compared....

Graphene double-layer capacitor with ac line-filtering performance.

Science.gov (United States)

Miller, John R; Outlaw, R A; Holloway, B C

2010-09-24

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Graphene Double-Layer Capacitor with ac Line-Filtering Performance

Science.gov (United States)

Miller, John R.; Outlaw, R. A.; Holloway, B. C.

2010-09-01

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Catechol-chitosan redox capacitor for added amplification in electrochemical immunoanalysis.

Science.gov (United States)

Yan, Kun; Liu, Yi; Guan, Yongguang; Bhokisham, Narendranath; Tsao, Chen-Yu; Kim, Eunkyoung; Shi, Xiao-Wen; Wang, Qin; Bentley, William E; Payne, Gregory F

2018-05-22

Antibodies are common recognition elements for molecular detection but often the signals generated by their stoichiometric binding must be amplified to enhance sensitivity. Here, we report that an electrode coated with a catechol-chitosan redox capacitor can amplify the electrochemical signal generated from an alkaline phosphatase (AP) linked immunoassay. Specifically, the AP product p-aminophenol (PAP) undergoes redox-cycling in the redox capacitor to generate amplified oxidation currents. We estimate an 8-fold amplification associated with this redox-cycling in the capacitor (compared to detection by a bare electrode). Importantly, this capacitor-based amplification is generic and can be coupled to existing amplification approaches based on enzyme-linked catalysis or magnetic nanoparticle-based collection/concentration. Thus, the capacitor should enhance sensitivities in conventional immunoassays and also provide chemical to electrical signal transduction for emerging applications in molecular communication. Copyright © 2018 Elsevier B.V. All rights reserved.

Problems of increasing specific characteristics of pulse capacitors and cables

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Monastyrskij, A.E.; Shilin, O.V.

1984-01-01

Requirements for high specific energy are practically related to all types of pulse capacitors of energy storage. At present the specific energy for most types of home and foreign pulse capacitors is about 0.1 MJ/m 3 at operating electric field intensity 70-100 kV/mm. It is shown that the basic means for increasing the specific energy and working intensity is the application of new polymeric film materials. Application of paper-film and film insulation permits to develop the specific types of capacitors designed for a limited service life in an aperiodic discharge mode with lower reliabiliy and the specific energy upto 0.5 MJ/m 3 . Characteristics of separate types of pulse capacitors and cables are given, and reliability criterion is considered. Measures of increasing reliability and service life for pulse capacitors and cables, used as tokamak power supplies are enumerated

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander

2016-01-01

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

The two-capacitor problem revisited: a mechanical harmonic oscillator model approach

International Nuclear Information System (INIS)

Lee, Keeyung

2009-01-01

The well-known two-capacitor problem, in which exactly half the stored energy disappears when a charged capacitor is connected to an identical capacitor, is discussed based on the mechanical harmonic oscillator model approach. In the mechanical harmonic oscillator model, it is shown first that exactly half the work done by a constant applied force is dissipated irrespective of the form of dissipation mechanism when the system comes to a new equilibrium after a constant force is abruptly applied. This model is then applied to the energy loss mechanism in the capacitor charging problem or the two-capacitor problem. This approach allows a simple explanation of the energy dissipation mechanism in these problems and shows that the dissipated energy should always be exactly half the supplied energy whether that is caused by the Joule heat or by the radiation. This paper, which provides a simple treatment of the energy dissipation mechanism in the two-capacitor problem, is suitable for all undergraduate levels

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

Science.gov (United States)

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Degradation Effect on Reliability Evaluation of Aluminum Electrolytic Capacitor in Backup Power Converter

DEFF Research Database (Denmark)

Zhou, Dao; Wang, Huai; Blaabjerg, Frede

2017-01-01

DC capacitors in power electronic converters are a major constraint on improvement of power density as well as reliability. In this paper, according to the degradation data of electrolytic capacitors through the accelerated test, the time-to-failure of the capacitor cell is acquired and it can...... be further extended to lower stress levels. Then, in a case study of a fuel cell backup power application, the mission profile based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in terms of the standby mode and operation mode. The lifetime prediction of the capacitor...

Simulation and analysis of transient over voltages due to capacitor banks switching

International Nuclear Information System (INIS)

Jadid, Sh.; Yazdanpanah, D.

2002-01-01

The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Reliability of Capacitors for DC-Link Applications in Power Electronic Converters

DEFF Research Database (Denmark)

Wang, Huai; Blaabjerg, Frede

2014-01-01

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters...... from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications....

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Energy Technology Data Exchange (ETDEWEB)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2014-10-20

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

International Nuclear Information System (INIS)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

2014-01-01

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

Directory of Open Access Journals (Sweden)

J. W. Horng

2011-09-01

Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

Impedance measurement and modelling of super-capacitors for railway applications

Energy Technology Data Exchange (ETDEWEB)

Hammar, A.; Chabas, J. [Societe Nationale des Chemins de fer Francais (SNCF), Dir. de la Recherche, 75 - Paris (France); Coquery, G.; Lallemand, R. [Institut National de Recherche sur les Transports et leur Securite (INRETS), Lab. des Technologies Nouvelles, 94 - Arcueil (France); Rojat, G.; Venet, P. [Lyon-1 Univ. Claude Bernard, CEGELY, 69 - Villeurbanne (France)

2004-07-01

Railways and electrical traction systems require high power rates to achieve their operating performances. Systems of power supply based on super-capacitors should offer high power density along with good energy efficiency and expected operating safety. We investigate general behaviours of super-capacitors with two powerful methods of analysis. The first is constant charge/discharge current at high level value (500 A), the second is impedance spectroscopy which leads to the acquisition of a set of parameters that are considered sufficient to describe general properties of super-capacitor, in particular the state of health and the available energy in any operating conditions. An electrical circuit model is defined for super-capacitors based on activated carbon and organic electrolyte. It takes into account the dependence of super-capacitor to voltage and current. The mixture of data of the two methods permits to obtain a representative model for power applications. Matlab/Simulink simulations are shown to verify the validity of the model. (authors)

Capacitor voltage ripple reduction and arm energy balancing in MMC-HVDC

DEFF Research Database (Denmark)

Parikh, Harsh; Martin-Loeches, Ruben Sánches; Tsolaridis, Georgios

2016-01-01

Modular Multilevel Converters are emerging and widely used in HVDC applications. However, the submodule capacitors are still large and the energy balancing under unbalanced conditions is a challenge. In this paper, an analytical model focusing on the energy stored in the capacitors and voltage...... variations is utilized in order to achieve better performance. By injecting a second order harmonic component into the circulating current, the energy variation and consequently the capacitor voltage ripple is reduced allowing for a capacitor size reduction. At the same time, an arm energy balancing...

Capacitor Bank 'CHANDI' for Plasma Target Production for Liner Plasma Interaction

International Nuclear Information System (INIS)

Shukla, R.; Sharma, S.K.; Debnath, K.; Shyam, A.

2006-01-01

A capacitor bank is fabricated to drive (JXB) Plasma gun to generate hot plasma (target) for liner plasma investigation. The bank will also be used for driving other pintch experiments. The bank consists of 8 capacitors connected in parallel, each having capacitance of 178 μF giving a total of 1424uF. The bank is charged at 15 kV using a 28 kV power supply charging the capacitors in 65 seconds utilizing full wave charging technique. The total energy of the bank is 160kJ at 15kV. A modeling of power supply was done so that all the components involved are utilized to their operating limit safely. Moreover to give fault protection to the capacitor bank we have implemented the neutral control technique in the power supply. The capacitor bank is discharged to the inductive load through an ignitron switch of very high coulomb rating and capable of withstanding high voltages at its electrodes. The cables used for connecting capacitor bank with ignitron switch are used in parallel to give them collective capability of bearing capacitor discharge currents. These cables are capable of holding high DC voltages (40kV), which appear at the time of charging of the bank. The bank is tested and is operational

Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

OpenAIRE

渡辺, 重佳

2009-01-01

Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

Antenna Miniaturization with MEMS Tunable Capacitors

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

2014-01-01

In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

International Nuclear Information System (INIS)

Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2012-01-01

Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

Nonvolatile Memory Elements Based on the Intercalation of Organic Molecules Inside Carbon Nanotubes

Science.gov (United States)

Meunier, Vincent; Kalinin, Sergei V.; Sumpter, Bobby G.

2007-02-01

We propose a novel class of nonvolatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of an encapsulated molecule. The guest molecule has two stable orientational positions relative to the nanotube that correspond to conducting and nonconducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4TCNQ molecule encapsulated inside a metallic carbon nanotube. Our results suggest that this new type of nonvolatile memory element is robust, fatigue-free, and can operate at room temperature.

High-energy power capacitors, their applied technology and the trends

International Nuclear Information System (INIS)

2012-01-01

High-voltage and high-energy-density power capacitors called high-power ones such as film or electrolytic capacitors, have been used in large quantities for the pulse power technology such as an impulse current or voltage generator and a laser power supply, and for the power electronics one with progress of the power semiconductor device and the inverter technology. Recently, electric double layer capacitors (EDLC) with remarkable technical progress have been applied for the equipments of electric power and industrial field for the purpose of energy saving or electric power quality improvement, which have come to link to the electric power system. Thus, using a lot of high-power capacitors near our life would require to know the structure, the principle and the characteristic of capacitors, and also to consider suitable directions for use, maintenance and safety and so on, when carrying out a system and a facility design. In the technical report, while describing the dielectric and the feature of some high-power capacitors, and introducing the application examples to the laser-fusion power supply and some systems with EDLC, the trend of standardization of EDLC and the directivity of the examination about installation and maintenance of the applied equipments are described. (author)

A Robust DC-Split-Capacitor Power Decoupling Scheme for Single-Phase Converter

DEFF Research Database (Denmark)

Yao, Wenli; Loh, Poh Chiang; Tang, Yi

2017-01-01

Instead of bulky electrolytic capacitors, active power decoupling circuit can be introduced to a single-phase converter for diverting second harmonic ripple away from its dc source or load. One possible circuit consists of a half-bridge and two capacitors in series for forming a dc-split capacitor......, instead of the usual single dc-link capacitor bank. Methods for regulating this power decoupler have earlier been developed, but almost always with equal capacitances assumed for forming the dc-split capacitor, even though it is not realistic in practice. The assumption should, hence, be evaluated more...... thoroughly, especially when it is shown in the paper that even a slight mismatch can render the power decoupling scheme ineffective and the IEEE 1547 standard to be breached. A more robust compensation scheme is, thus, needed for the dc-split capacitor circuit, as proposed and tested experimentally...

Instantaneous thermal modeling of the DC-link capacitor in PhotoVoltaic systems

DEFF Research Database (Denmark)

Yang, Yongheng; Ma, Ke; Wang, Huai

2015-01-01

, instantaneous thermal modeling approaches considering mission profiles for the DC-link capacitor in single-phase PV systems are explored in this paper. These thermal modelling approaches are based on: a) fast Fourier transform, b) look-up tables, and c) ripple current reconstruction. Moreover, the thermal...... grid-connected PV system have been adopted to demonstrate a look-up table based modelling approach, where real-field daily ambient conditions are considered....... modelling approaches for the DC-link capacitors take into account the instantaneous thermal characteristics, which are more challenging to the capacitor reliability during operation. Such instantaneous thermal modeling approaches enable a translation of instantaneous capacitor power losses to capacitor...

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Science.gov (United States)

Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

2016-10-12

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

The Two-Capacitor Problem Revisited: A Mechanical Harmonic Oscillator Model Approach

Science.gov (United States)

Lee, Keeyung

2009-01-01

The well-known two-capacitor problem, in which exactly half the stored energy disappears when a charged capacitor is connected to an identical capacitor, is discussed based on the mechanical harmonic oscillator model approach. In the mechanical harmonic oscillator model, it is shown first that "exactly half" the work done by a constant applied…

Reliability assessment for metallized film pulse capacitors with accelerated degradation test

International Nuclear Information System (INIS)

Zhao Jianyin; Liu Fang; Xi Wenjun; He Shaobo; Wei Xiaofeng

2011-01-01

The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability is straightforward affected by the reliability level of capacitors. Reliability analysis of highly reliable devices, such as metallized film capacitors, is a challenge due to cost and time restriction. Accelerated degradation test provides a way to predict its life cost and time effectively. A model and analyses for accelerated degradation data of metallized film capacitors are described. Also described is a method for estimating the distribution of failure time. The estimation values of the unknown parameters in this model are 9.066 9 x 10 -8 and 0.022 1. Both the failure probability density function (PDF) and the cumulative distribution function (CDF) can be presented by this degradation failure model. Based on these estimation values and the PDF/CDF, the reliability model of the metallized film capacitors is obtained. According to the reliability model, the probability of the capacitors surviving to 20 000 shot is 0.972 4. (authors)

Characterization system for research on energy storage capacitors

Science.gov (United States)

Noriega, J. R.; Iyore, O. D.; Budime, C.; Gnade, B.; Vasselli, J.

2013-05-01

In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

KAUST Repository

Elshurafa, Amro M.

2012-07-23

In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single-layer MEMS fractal capacitors. Explicitly, a capacitor with a woven structure and another with an interleaved configuration were fabricated in the standard PolyMUMPS surface micromachining process and tested at S-band frequencies. The self-resonant frequencies of the fabricated capacitors were close to 10GHz, which is better than that of the parallel-plate capacitor, which measured only 5.5GHz. Further, the presented capacitors provided a higher capacitance when compared with the state-of-the-art-reported MEMS fractal capacitors created using a single layer at the expense of a lower quality factor. © 2012 The Institution of Engineering and Technology.

Potential of Mass Spectrometry in Developing Clinical Laboratory Biomarkers of Nonvolatiles in Exhaled Breath.

Science.gov (United States)

Beck, Olof; Olin, Anna-Carin; Mirgorodskaya, Ekaterina

2016-01-01

Exhaled breath contains nonvolatile substances that are part of aerosol particles of submicrometer size. These particles are formed and exhaled as a result of normal breathing and contain material from distal airways of the respiratory system. Exhaled breath can be used to monitor biomarkers of both endogenous and exogenous origin and constitutes an attractive specimen for medical investigations. This review summarizes the present status regarding potential biomarkers of nonvolatile compounds in exhaled breath. The field of exhaled breath condensate is briefly reviewed, together with more recent work on more selective collection procedures for exhaled particles. The relation of these particles to the surfactant in the terminal parts of the respiratory system is described. The literature on potential endogenous low molecular weight compounds as well as protein biomarkers is reviewed. The possibility to measure exposure to therapeutic and abused drugs is demonstrated. Finally, the potential future role and importance of mass spectrometry is discussed. Nonvolatile compounds exit the lung as aerosol particles that can be sampled easily and selectively. The clinical applications of potential biomarkers in exhaled breath comprise diagnosis of disease, monitoring of disease progress, monitoring of drug therapy, and toxicological investigations. © 2015 American Association for Clinical Chemistry.

Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

DEFF Research Database (Denmark)

Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

2016-01-01

The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

DC-to-DC converter comprising a reconfigurable capacitor unit

NARCIS (Netherlands)

2008-01-01

The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

DC-to-DC converter comprising a reconfigurable capacitor unit

NARCIS (Netherlands)

Klootwijk, J.H.; Bergveld, H.J.; Roozeboom, F.; Reefman, D.; Ruigrok, J.

2013-01-01

The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

Stable isotopic carbon composition of apples and their subfractions--juice, seeds, sugars, and nonvolatile acids.

Science.gov (United States)

Lee, H S; Wrolstad, R E

1988-01-01

The 13C:12C ratios of 8 authentic apple juice samples and their subfractions were determined by mass spectrometry. Apples from Argentina, Mexico, New Zealand, and the United States were processed into juice; pulp was collected from the milled fruit and seeds were collected from the press-cake. Sugars, nonvolatile acids, and phenolics were isolated from the juice by treatment with ion-exchange resins and polyvinylpyrrolidone (PVPP). The mean value for all juice samples was -24.2% which is close to the values reported by other investigators. Juice from apples grown in Argentina, Mexico, and New Zealand did not differ from U.S. samples. The isotopic composition of the subfractions ranged from -22.0 to -31.0%. The values for the pulp were essentially the same as for juice. The sugar fraction was slightly less negative than the juice; the nonvolatile acid and phenolic fractions were more negative. The levels of nonvolatile acids and phenolics in apple juice are low, however, so these compounds contribute little to overall delta 13C values in juice.

Floating body cell a novel capacitor-less DRAM cell

CERN Document Server

Ohsawa, Takashi

2011-01-01

DRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing serious difficulty in shrinking the size of the capacitor whose capacitance needs to be kept almost constant (20~30fF) throughout generations. The availability of a new DRAM cell which does not rely on an explicit capacitor for storing its data is more than ever awaited for further increasing the bit dens

Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

Science.gov (United States)

Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

2014-11-26

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

Carbon-based fibrous EDLC capacitors and supercapacitors

OpenAIRE

Lekakou, C; Moudam, O; Markoulidis, F; Andrews, T; Watts, JF; Reed, GT

2011-01-01

This paper investigates electrochemical double-layer capacitors (EDLCs) including two alternative types of carbon-based fibrous electrodes, a carbon fibre woven fabric (CWF) and a multiwall carbon nanotube (CNT) electrode, as well as hybrid CWF-CNT electrodes. Two types of separator membranes were also considered. An organic gel electrolyte PEO-LiCIO4-EC-THF was used to maintain a high working voltage. The capacitor cells were tested in cyclic voltammetry, charge-discharge, and impedance test...

Phase shift PWM with double two-switch bridge for high power capacitor charging

International Nuclear Information System (INIS)

Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

2013-01-01

Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

Downhole transmission system comprising a coaxial capacitor

Science.gov (United States)

Hall, David R [Provo, UT; Pixton, David S [Lehi, UT; Johnson, Monte L [Orem, UT; Bartholomew, David B [Springville, UT; Hall, Jr., H. Tracy; Rawle, Michael [Springville, UT

2011-05-24

A transmission system in a downhole component comprises a plurality of data transmission elements. A coaxial cable having an inner conductor and an outer conductor is disposed within a passage in the downhole component such that at least one capacitor is disposed in the passage and having a first terminal coupled to the inner conductor and a second terminal coupled to the outer conductor. Preferably the transmission element comprises an electrically conducting coil. Preferably, within the passage a connector is adapted to electrically connect the inner conductor of the coaxial cable and the lead wire. The coaxial capacitor may be disposed between and in electrically communication with the connector and the passage. In another embodiment a connector is adapted to electrical connect a first and a second portion of the inner conductor of the coaxial cable and a coaxial capacitor is in electrical communication with the connector and the passage.

Size distributions of non-volatile particle residuals (Dp<800 nm at a rural site in Germany and relation to air mass origin

Directory of Open Access Journals (Sweden)

T. Tuch

2007-11-01

Full Text Available Atmospheric aerosol particle size distributions at a continental background site in Eastern Germany were examined for a one-year period. Particles were classified using a twin differential mobility particle sizer in a size range between 3 and 800 nm. As a novelty, every second measurement of this experiment involved the removal of volatile chemical compounds in a thermodenuder at 300°C. This concept allowed to quantify the number size distribution of non-volatile particle cores – primarily associated with elemental carbon, and to compare this to the original non-conditioned size distribution. As a byproduct of the volatility analysis, new particles originating from nucleation inside the thermodenuder can be observed, however, overwhelmingly at diameters below 6 nm. Within the measurement uncertainty, every particle down to particle sizes of 15 nm is concluded to contain a non-volatile core. The volume fraction of non-volatile particulate matter (non-conditioned diameter < 800 nm varied between 10 and 30% and was largely consistent with the experimentally determined mass fraction of elemental carbon. The average size of the non-volatile particle cores was estimated as a function of original non-conditioned size using a summation method, which showed that larger particles (>200 nm contained more non-volatile compounds than smaller particles (<50 nm, thus indicating a significantly different chemical composition. Two alternative air mass classification schemes based on either, synoptic chart analysis (Berliner Wetterkarte or back trajectories showed that the volume and number fraction of non-volatile cores depended less on air mass than the total particle number concentration. In all air masses, the non-volatile size distributions showed a more and a less volatile ("soot" mode, the latter being located at about 50 nm. During unstable conditions and in maritime air masses, smaller values were observed compared to stable or continental conditions

Powder based superdielectric materials for novel Capacitor design

Science.gov (United States)

2017-06-01

found in cars, smartphones and other devices have adequate energy densities but lack optimal electric power delivery performance [4]. Stated differently... physical damage to the electrodes [5]. Conversely, capacitors store energy electrostatically by releasing excited state electrons collected on a...overview of capacitor theory is presented as a means of highlighting key physics principles applicable to this research. First, the concept of

The application of structural nonlinearity in the development of linearly tunable MEMS capacitors

International Nuclear Information System (INIS)

Shavezipur, M; Khajepour, A; Hashemi, S M

2008-01-01

Electrostatically actuated parallel-plate tunable capacitors are the most desired MEMS capacitors because of their smaller sizes and higher Q-factors. However, these capacitors suffer from low tunability and exhibit high sensitivity near the pull-in voltage which counters the concept of tunability. In this paper, a novel design for parallel-plate tunable capacitors with high tunability and linear capacitance–voltage (C–V) response is developed. The design uses nonlinear structural rigidities to relieve intrinsic electrostatic nonlinearity in MEMS capacitors. Based on the force–displacement characteristic of an ideally linear capacitor, a real beam-like nonlinear spring model is developed. The variable stiffness coefficients of such springs improve the linearity of the C–V curve. Moreover, because the structural stiffness increases with deformations, the pull-in is delayed and higher tunability is achieved. Finite element simulations reveal that capacitors with air gaps larger than 4 µm and supporting beams thinner than 1 µm can generate highly linear C–V responses and tunabilities over 120%. Experimental results for capacitors fabricated by PolyMUMPs verify the effect of weak nonlinear geometric stiffness on improving the tunability for designs with a small air gap and relatively thick structural layers

Impedance Characteristics Modeling of a Two-Terminal Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai; Lu, Minghui

2017-01-01

to overcome the above issues. In this paper, the modeling of the active capacitor is investigated and a voltage feed-forward compensation scheme is proposed for overshoot reduction. Therefore, the impedance, equivalent capacitance, ESR, and ESL, of the active capacitor can be specified. A case study based...

Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

NARCIS (Netherlands)

Chen, Qian; Gomes, H.L.; Rocha, P.R.F.; Leeuw, de D.M.; Meskers, S.C.J.

2013-01-01

Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law

Barium titanate nanocomposite capacitor FY09 year end report.

Energy Technology Data Exchange (ETDEWEB)

Stevens, Tyler E.; DiAntonio, Christopher Brian; Yang, Pin; Chavez, Tom P.; Winter, Michael R.; Monson, Todd C.; Roesler, Alexander William; Fellows, Benjamin D.

2009-11-01

This late start RTBF project started the development of barium titanate (BTO)/glass nanocomposite capacitors for future and emerging energy storage applications. The long term goal of this work is to decrease the size, weight, and cost of ceramic capacitors while increasing their reliability. Ceramic-based nanocomposites have the potential to yield materials with enhanced permittivity, breakdown strength (BDS), and reduced strain, which can increase the energy density of capacitors and increase their shot life. Composites of BTO in glass will limit grain growth during device fabrication (preserving nanoparticle grain size and enhanced properties), resulting in devices with improved density, permittivity, BDS, and shot life. BTO will eliminate the issues associated with Pb toxicity and volatility as well as the variation in energy storage vs. temperature of PZT based devices. During the last six months of FY09 this work focused on developing syntheses for BTO nanoparticles and firing profiles for sintering BTO/glass composite capacitors.

Experimental verification of on-chip CMOS fractional-order capacitor emulators

KAUST Repository

Tsirimokou, G.

2016-06-13

The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

Experimental verification of on-chip CMOS fractional-order capacitor emulators

KAUST Repository

Tsirimokou, G.; Psychalinos, C.; Salama, Khaled N.; Elwakil, A.S.

2016-01-01

The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

Science.gov (United States)

Li, S. P.

1974-01-01

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Capacitor discharge process for welding braided cable

Science.gov (United States)

Wilson, Rick D.

1995-01-01

A capacitor discharge process for welding a braided cable formed from a plurality of individual cable strands to a solid metallic electrically conductive member comprises the steps of: (a) preparing the electrically conductive member for welding by bevelling one of its end portions while leaving an ignition projection extending outwardly from the apex of the bevel; (b) clamping the electrically conductive member in a cathode fixture; (c) connecting the electrically conductive member clamped in the cathode fixture to a capacitor bank capable of being charged to a preselected voltage value; (d) preparing the braided cable for welding by wrapping one of its end portions with a metallic sheet to form a retaining ring operable to maintain the individual strands of the braided cable in fixed position within the retaining ring; (e) clamping the braided cable and the retaining ring as a unit in an anode fixture so that the wrapped end portion of the braided cable faces the ignition projection of the electrically conductive member; and (f) moving the cathode fixture towards the anode fixture until the ignition projection of the electrically conductive member contacts the end portion of the braided cable thereby allowing the capacitor bank to discharge through the electrically conductive member and through the braided cable and causing the electrically conductive member to be welded to the braided cable via capacitor discharge action.

Graphene electric double layer capacitor with ultra-high-power performance

International Nuclear Information System (INIS)

Miller, John R.; Outlaw, R.A.; Holloway, B.C.

2011-01-01

We have demonstrated, for the first time, efficient 120 Hz filtering by an electric double layer capacitor (EDLC). The key to this ultra-high-power performance is electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized both electronic and ionic resistance and produced capacitors having RC time-constants of less than 200 μs. Significantly, graphene nanosheets have a preponderance of exposed edge planes that greatly increase stored charge over designs relying on basal plane surfaces. Collectively these factors make vertically oriented graphene nanosheet electrodes ideally suited for producing high-frequency EDLCs. Capacitors constructed with these electrodes are predicted to be significantly smaller than aluminum electrolyte capacitors that they could functionally replace plus be manufactured using standard semiconductor process equipment, creating interesting commercial opportunities.

Multi-step capacitor discharges as an RF generator

International Nuclear Information System (INIS)

Hotta, Eiki; Yamamoto, Shunji; Ishii, Shozo; Hayashi, Izumi

1979-01-01

A variety of methods have been developed for large output radio frequency (RF) generators to heat and stabilize high temperature plasma. As the generators for this purpose, capacitor discharge, cable discharge, and oscillation with electronic tubes are considered. Here, a new RF generator is reported, which utilizes capacitor discharge to extract heavy current, and solves the difficulty of short duration by employing multistep discharges. The authors solved the problem of frequency decrease in capacitor discharge by cutting off the unnecessary capacitors reasonably from the load circuit, using the additional circuit for shunting current and vacuum gap switches. The vacuum gap switches and the trigger system are described together with the RF generator manufactured. The generator was fabricated to be rather compact for its large output and simple in circuitry as compared with conventional oscillator systems. The shortcomings are frequency variation and the improper phase of switching the next step in to cause instability, when the load change occurs. It would be difficult to operate the generator in a RF range of more than about 10 MHz due to jitter of the vacuum gap switches and others. (Wakatsuki, Y.)

All-printed capacitors with continuous solution dispensing technology

Science.gov (United States)

Ge, Yang; Plötner, Matthias; Berndt, Andreas; Kumar, Amit; Voit, Brigitte; Pospiech, Doris; Fischer, Wolf-Joachim

2017-09-01

Printed electronics have been introduced into the commercial markets in recent years. Various printing technologies have emerged aiming to process printed electronic devices with low cost, environmental friendliness, and compatibility with large areas and flexible substrates. The aim of this study is to propose a continuous solution dispensing technology for processing all-printed thin-film capacitors on glass substrates using a leading-edge printing instrument. Among all printing technologies, this study provides concrete proof of the following outstanding advantages of this technology: high tolerance to inks, high throughput, low cost, and precise pattern transfers. Ag nanoparticle ink based on glycol ethers was used to print the electrodes. To obtain dielectric ink, a copolymer powder of poly(methyl methacrylate-co-benzoylphenyl methacrylate) containing crosslinkable side groups was dissolved in anisole. Various layouts were designed to support multiple electronic applications. Scanning electron microscopy and atomic force microscopy were used to investigate the all-printed capacitor layers formed using the proposed process. Additionally, the printed capacitors were electrically characterized under direct current and alternating current. The measured electrical properties of the printed capacitors were consistent with the theoretical results.

Silicon integrated circuits part A : supplement 2

CERN Document Server

Kahng, Dawon

1981-01-01

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

DEFF Research Database (Denmark)

Phatak, C.; Petford-Long, A. K.; Beleggia, Marco

2014-01-01

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We prese...

The design and implementation of on-line monitoring system for UHV compact shunt capacitors

Science.gov (United States)

Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

2017-08-01

Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

Graphene spin capacitor for magnetic field sensing

OpenAIRE

Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

2010-01-01

An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

Low-temperature process steps for realization of non-volatile memory devices

NARCIS (Netherlands)

Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

2007-01-01

In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

Comb-Line Filter with Coupling Capacitor in Ground Plane

Directory of Open Access Journals (Sweden)

Toshiaki Kitamura

2011-01-01

Full Text Available A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.

Device for detecting imminent failure of high-dielectric stress capacitors. [Patent application

Science.gov (United States)

McDuff, G.G.

1980-11-05

A device is described for detecting imminent failure of a high-dielectric stress capacitor utilizing circuitry for detecting pulse width variations and pulse magnitude variations. Inexpensive microprocessor circuitry is utilized to make numerical calculations of digital data supplied by detection circuitry for comparison of pulse width data and magnitude data to determine if preselected ranges have been exceeded, thereby indicating imminent failure of a capacitor. Detection circuitry may be incorporated in transmission lines, pulse power circuitry, including laser pulse circuitry or any circuitry where capacitors or capacitor banks are utilized.

Thyristor-controlled reactor improves series capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Renz, K.W.; Thumm, G.; Weiss, S. [Siemens AG, Erlangen (Germany)

1995-12-31

Environmental considerations make it more and more difficult to plan and erect new transmission lines. FACTS (Flexible AC Transmission Systems) technology can provide devices to improve the utility of AC transmission lines. The innovative combination of conventional fixed series capacitors and thyristor controlled reactors as a new FACTS device was introduced into a transmission system in 1992. This Advanced Series Compensation (ASC) system provides many advantages not available with conventional fixed series capacitor installations such as flexible direct and continuous control of the compensation level, direct and smooth power flow control and improved capacitor bank protection. This new technology offers enhanced system flexibility by control of transmission line overload conditions, reduction in fault currents, sub-synchronous resonance (SSR) mitigation and network power oscillation damping. The world-first three-phase installation at Kayenta Substation, USA, demonstrates that modern FACTS devices using SVC thyristor valve technology can be designed and operated successfully. 6 refs, 7 figs

Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

Science.gov (United States)

Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

2015-12-01

This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

Science.gov (United States)

2017-03-06

WP-201317) Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-volatile Particulate Matter (PM... Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions 6. AUTHOR(S) E. Corporan, M. DeWitt, C. Klingshirn, M.D. Cheng, R. Miake-Lye, J. Peck...the performance and viability of two devices to condition aircraft turbine engine exhaust to allow the accurate measurement of total (volatile and non

A high-performance trench capacitor integrated in a passive integration technology

International Nuclear Information System (INIS)

Geiselbrechtinger, Angelika; Büyüktas, Kevni; Allers, Karl-Heinz; Hartung, Wolfgang

2009-01-01

The requirements for the electrical characteristics of passive on-chip devices become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. New technologies and new device concepts are necessary to meet the demands. In this work, a trench capacitor developed for RF applications is presented for the first time. This so-called SilCap (silicon capacitor) device features very high capacitance density, extreme low-voltage dependence, excellent temperature stability, good RF performance and a high breakthrough voltage. First, the device function and the technological concept are introduced. The concept is realized without implementing cost-intensive high-k materials. This trench capacitor is integrated in the front end of line of a passive integration technology. The achieved specific capacitance density is compared to a standard planar capacitor. Performance of the SilCap in terms of quality factor and breakthrough voltage is shown. Finally, reliability data of this trench capacitor are presented with special focus on extrinsic and dielectric lifetime

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

Science.gov (United States)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Capacitor-based detection of nuclear magnetization: nuclear quadrupole resonance of surfaces.

Science.gov (United States)

Gregorovič, Alan; Apih, Tomaž; Kvasić, Ivan; Lužnik, Janko; Pirnat, Janez; Trontelj, Zvonko; Strle, Drago; Muševič, Igor

2011-03-01

We demonstrate excitation and detection of nuclear magnetization in a nuclear quadrupole resonance (NQR) experiment with a parallel plate capacitor, where the sample is located between the two capacitor plates and not in a coil as usually. While the sensitivity of this capacitor-based detection is found lower compared to an optimal coil-based detection of the same amount of sample, it becomes comparable in the case of very thin samples and even advantageous in the proximity of conducting bodies. This capacitor-based setup may find its application in acquisition of NQR signals from the surface layers on conducting bodies or in a portable tightly integrated nuclear magnetic resonance sensor. Copyright © 2010 Elsevier Inc. All rights reserved.

Prognostics Health Management and Physics based failure Models for Electrolytic Capacitors

Data.gov (United States)

National Aeronautics and Space Administration — This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors and MOSFETs are the two major...

Powering microbial electrolysis cells by capacitor circuits charged using microbial fuel cell

KAUST Repository

Hatzell, Marta C.

2013-05-01

A microbial electrolysis cell (MEC) was powered by a capacitor based energy storage circuit using energy from a microbial fuel cell (MFC) to increase MEC hydrogen production rates compared to that possible by the MFC alone. To prevent voltage reversal, MFCs charged the capacitors in a parallel configuration, and then the capacitors were discharged in series to boost the voltage that was used to power the MECs. The optimal capacitance for charging was found to be ∼0.01 F for each MFC. The use of the capacitor charging system increased energy recoveries from 9 to 13%, and hydrogen production rates increased from 0.31 to 0.72 m3 m-3-day-1, compared to coupled systems without capacitors. The circuit efficiency (the ratio of the energy that was discharged to the MEC to the energy provided to the capacitor from the MFCs) was ∼90%. These results provide an improved method for linking MFCs to MECs for renewable hydrogen gas production. © 2012 Elsevier B.V. All rights reserved.

Performance of ALVAND 1. capacitor bank

International Nuclear Information System (INIS)

Torabi-fard, A.; Farahani, M.; Ebrani, M.; Rostami, R.; Daghighian, F.

1978-01-01

This report describes the specifications of the capacitor bank for the ALVAND I, Linear theta pinch experiment and the results of some tests performed on it. A one-meter-wide module includes the basic components such as capacitors, Spark gaps, and crowbar triggers. Complementary parts such as ground system, pressurised dry air system and safety system were added. With a rise-time of about three micro-seconds and a total current of six million amperes it is possible to produce ion temperature in excess of one kev for a few microseconds. Different probes were used to measure the magnetic field and the total current

Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

International Nuclear Information System (INIS)

Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

2015-01-01

Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

Switched-capacitor techniques for high-accuracy filter and ADC design

NARCIS (Netherlands)

Quinn, P.J.; Roermund, van A.H.M.

2007-01-01

Switched capacitor (SC) techniques are well proven to be excellent candidates for implementing critical analogue functions with high accuracy, surpassing other analogue techniques when embedded in mixed-signal CMOS VLSI. Conventional SC circuits are primarily limited in accuracy by a) capacitor

Integration substrate with a ultra-high-density capacitor and a through-substrate via

NARCIS (Netherlands)

Klootwijk, J.H.; Roozeboom, F.; Ruigrok, J.J.M.; Reefman, D.

2014-01-01

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. --The capacitor-electrode

Lifetime Estimation of Electrolytic Capacitors in Fuel Cell Power Converter at Various Confidence Levels

DEFF Research Database (Denmark)

Zhou, Dao; Wang, Huai; Blaabjerg, Frede

2016-01-01

DC capacitors in power electronic converters are a major constraint on improvement of the power density and the reliability. In this paper, according to the degradation data of tested capacitors, the lifetime model of the component is analyzed at various confidence levels. Then, the mission profile...... based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in a fuel cell backup power converter operating in both standby mode and operation mode. The lifetime prediction of the capacitor banks at different confidence levels is also obtained....

Driving mechanisms of ionic polymer actuators having electric double layer capacitor structures.

Science.gov (United States)

Imaizumi, Satoru; Kato, Yuichi; Kokubo, Hisashi; Watanabe, Masayoshi

2012-04-26

Two solid polymer electrolytes, composed of a polyether-segmented polyurethaneurea (PEUU) and either a lithium salt (lithium bis(trifluoromethanesulfonyl)amide: Li[NTf2]) or a nonvolatile ionic liquid (1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)amide: [C2mim][NTf2]), were prepared in order to utilize them as ionic polymer actuators. These salts were preferentially dissolved in the polyether phases. The ionic transport mechanism of the polyethers was discussed in terms of the diffusion coefficients and ionic transference numbers of the incorporated ions, which were estimated by means of pulsed-field gradient spin-echo (PGSE) NMR. There was a distinct difference in the ionic transport properties of each polymer electrolyte owing to the difference in the magnitude of interactions between the cations and the polyether. The anionic diffusion coefficient was much faster than that of the cation in the polyether/Li[NTf2] electrolyte, whereas the cation diffused faster than the anion in the polyether/[C2mim][NTf2] electrolyte. Ionic polymer actuators, which have a solid-state electric-double-layer-capacitor (EDLC) structure, were prepared using these polymer electrolyte membranes and ubiquitous carbon materials such as activated carbon and acetylene black. On the basis of the difference in the motional direction of each actuator against applied voltages, a simple model of the actuation mechanisms was proposed by taking the difference in ionic transport properties into consideration. This model discriminated the behavior of the actuators in terms of the products of transference numbers and ionic volumes. The experimentally observed behavior of the actuators was successfully explained by this model.

Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

Science.gov (United States)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

Capacitor Mismatch Error Cancellation Technique for a Successive Approximation A/D Converter

DEFF Research Database (Denmark)

Zheng, Zhiliang; Moon, Un-Ku; Steensgaard-Madsen, Jesper

1999-01-01

An error cancellation technique is described for suppressing capacitor mismatch in a successive approximation A/D converter. At the cost of a 50% increase in conversion time, the first-order capacitor mismatch error is cancelled. Methods for achieving top-plate parasitic insensitive operation...... are described, and the use of a gain- and offset-compensated opamp is explained. SWITCAP simulation results show that the proposed 16-bit SAR ADC can achieve an SNDR of over 91 dB under non-ideal conditions, including 1% 3 sigma nominal capacitor mismatch, 10-20% randomized parasitic capacitors, 66 dB opamp...

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.

Science.gov (United States)

Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

2016-04-29

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications.

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes

International Nuclear Information System (INIS)

Yoon, Yeoheung; Lee, Hyoyoung; Lee, Keunsik

2016-01-01

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp 2 -bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications. (topical review)

Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

Science.gov (United States)

Al-Amody, Fuad H.

This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

Degradation testing and failure analysis of DC film capacitors under high humidity conditions

DEFF Research Database (Denmark)

Wang, Huai; Nielsen, Dennis Achton; Blaabjerg, Frede

2015-01-01

Metallized polypropylene film capacitors are widely used for high-voltage DC-link applications in power electronic converters. They generally have better reliability performance compared to aluminum electrolytic capacitors under electro-thermal stresses within specifications. However......, the degradation of the film capacitors is a concern in applications exposed to high humidity environments. This paper investigates the degradation of a type of plastic-boxed metallized DC film capacitors under different humidity conditions based on a total of 8700 h of accelerated testing and also post failure...... of interest is also presented. The study enables a better understanding of the humidity-related failure mechanisms and reliability performance of DC film capacitors for power electronics applications....

High Voltage Homemade Capacitor Charger for Plasma Focus System

International Nuclear Information System (INIS)

Abdul Halim Baijan; Azaman Ahmad; Rokiah Mohd Sabri; Siti Aiasah Hashim; Mohd Rizal Md Chulan; Wah, L.K.; Azhar Ahmad; Rosli Che Ros; Mohd Faiz Mohd Zin

2015-01-01

A high voltage capacitor charger has been designed and built to replace a high voltage charger type General Atomics CCDs Power Supply which was damaged. The fabrication design was using materials which were easily available in the local market. Among the main components of the high-voltage charger is a transformer for neon lights, variable transformer rated 0 - 240 V 1 KVA, and 240 V transformer isolator. The results of experiments that have been conducted shows that a homemade capacitor charger was able to charge high voltage capacitors up to the required voltage of which was 12 kV. However the time taken for charging is quite long, up to more than 6 minutes. (author)

Integration substrate with a ultra-high-density capacitor and a through-substrate via

NARCIS (Netherlands)

2008-01-01

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least 4 elec. conductive capacitor-electrode layers in an alternating arrangement with dielec. layers. The capacitor-electrode layers are

CAPMIX -Deploying Capacitors for Salt Gradient Power Extraction

OpenAIRE

Bijmans, M.F.M.; Burheim, O.S.; Bryjak, M.; Delgado, A.; Hack, P.; Mantegazza, F.; Tenisson, S.; Hamelers, H.V.M.

2012-01-01

The process of mixing sea and river water can be utilised as a power source. At present, three groups of technology are established for doing so; i) mechanical; Pressure Retarded Osmosis PRO, ii) electrochemical reactions; Reverse ElectroDialysis (RED) and Nano Battery Electrodes (NBE) and iii) ultra capacitors; Capacitive Double Layer Expansion (CDLE) and Capacitors charge by the Donnan Potentials (CDP). The chemical potential for salt gradient power systems is only limited by th...

Force on an Asymmetric Capacitor

National Research Council Canada - National Science Library

Bahder, Thomas

2003-01-01

.... At present, the physical basis for the Biefeld-Brown effect is not understood. The order of magnitude of the net force on the asymmetric capacitor is estimated assuming two different mechanisms of charge conduction between its electrodes...

Capacitor current feedback for output filter damping in switched-mode magnet power supplies

International Nuclear Information System (INIS)

Paven Kumar, M.R.; Kim, J.M.S.

1994-01-01

In magnet power supplies for a particle accelerator system, a second-order low-pass filter is used to reduce the output current ripple content within specifications. The output filter must be properly damped in order to avoid any large amplification at the resonant frequency and large transient responses of voltages and currents at the step change of the line voltage. Conventionally, a series combination of resistance and capacitance is added in parallel with the filter capacitor to provide the required damping. This approach, however, requires a large dc-blocking capacitor which has to be several times larger than the filter capacitor. In this paper, a filter damping technique using capacitor current feedback is presented. The basic concept of the capacitor current feedback is established using a linear model of the converter involved, and then a sampled-data model of the converter is used to analyze the filter damping technique. The filter damping effect of the capacitor current feedback is verified experimentally

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.; Arsalan, Muhammad

2016-01-01

measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity

Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

International Nuclear Information System (INIS)

Kothapalli, A.; Sadler, G.

2003-01-01

The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 deg. C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.htmlref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.htmlpage1

Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

Science.gov (United States)

Kothapalli, A.; Sadler, G.

2003-08-01

The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 °C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.html#ref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.html#page1].

Bioorganic nanodots for non-volatile memory devices

International Nuclear Information System (INIS)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

2013-01-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2015-01-01

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-07-01

Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.

2015-07-23

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Flexible and weaveable capacitor wire based on a carbon nanocomposite fiber.

Science.gov (United States)

Ren, Jing; Bai, Wenyu; Guan, Guozhen; Zhang, Ye; Peng, Huisheng

2013-11-06

A flexible and weaveable electric double-layer capacitor wire is developed by twisting two aligned carbon nanotube/ordered mesoporous carbon composite fibers with remarkable mechanical and electronic properties as electrodes. This capacitor wire exhibits high specific capacitance and long life stability. Compared with the conventional planar structure, the capacitor wire is also lightweight and can be integrated into various textile structures that are particularly promising for portable and wearable electronic devices. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High voltage capacitor design and the determination of solid dielectric voltage breakdown

International Nuclear Information System (INIS)

Hutapea, S.

1976-01-01

The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

Metallized Film Capacitor Lifetime Evaluation and Failure Mode Analysis

CERN Document Server

Gallay, R.

2015-06-15

One of the main concerns for power electronic engineers regarding capacitors is to predict their remaining lifetime in order to anticipate costly failures or system unavailability. This may be achieved using a Weibull statistical law combined with acceleration factors for the temperature, the voltage, and the humidity. This paper discusses the different capacitor failure modes and their effects and consequences.

Enhancement of dielectric breakdown strengths in polymer film capacitors

International Nuclear Information System (INIS)

Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

1992-01-01

This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

Helping students understand real capacitors: measuring efficiencies in a school laboratory

International Nuclear Information System (INIS)

Simeão Carvalho, Paulo; Sampaio e Sousa, Adriano

2008-01-01

A recent reform in the Portuguese secondary school curriculum reintroduced the study of capacitors. Thus we decided to implement some experimental activities on this subject with our undergraduate students in physics education courses. A recent announcement of a new kind of capacitor being developed by a team of scientists at Massachusetts Institute of Technology (MIT), which makes use of nanotechnologies, was a great motivation for the study of a topic that could easily be considered 'out of time'. Since this new kind of capacitor is being seen as the battery of the future, our focus was essentially on efficiency measurements, motivating students to obtain, respectively, the time constant and the energies stored and supplied during the charge and discharge processes, from experimental graphics representing the power as a function of time in real capacitors

Enhanced DC-Link Capacitor Voltage Balancing Control of DC–AC Multilevel Multileg Converters

DEFF Research Database (Denmark)

Busquets-Monge, Sergio; Maheshwari, Ram Krishan; Nicolas-Apruzzese, Joan

2015-01-01

This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc-link vol......This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc...

Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

Simple hardware implementation of voltage balancing in capacitor-clamped inverter

Czech Academy of Sciences Publication Activity Database

Kokeš, Petr; Semerád, Radko

2009-01-01

Roč. 54, č. 4 (2009), s. 325-341 ISSN 0001-7043 R&D Projects: GA MPO FT-TA4/077 Institutional research plan: CEZ:AV0Z20570509 Keywords : capacitor -clamped multilevel inverter * flying capacitor voltage balancing * pulse width modulation (PWM) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Development of novel segmented-plate linearly tunable MEMS capacitors

International Nuclear Information System (INIS)

Shavezipur, M; Khajepour, A; Hashemi, S M

2008-01-01

In this paper, novel MEMS capacitors with flexible moving electrodes and high linearity and tunability are presented. The moving plate is divided into small and rigid segments connected to one another by connecting beams at their end nodes. Under each node there is a rigid step which selectively limits the vertical displacement of the node. A lumped model is developed to analytically solve the governing equations of coupled structural-electrostatic physics with mechanical contact. Using the analytical solver, an optimization program finds the best set of step heights that provides the highest linearity. Analytical and finite element analyses of two capacitors with three-segmented- and six-segmented-plate confirm that the segmentation technique considerably improves the linearity while the tunability remains as high as that of a conventional parallel-plate capacitor. Moreover, since the new designs require customized fabrication processes, to demonstrate the applicability of the proposed technique for standard processes, a modified capacitor with flexible steps designed for PolyMUMPs is introduced. Dimensional optimization of the modified design results in a combination of high linearity and tunability. Constraining the displacement of the moving plate can be extended to more complex geometries to obtain smooth and highly linear responses

Printed Barium Strontium Titanate capacitors on silicon

Energy Technology Data Exchange (ETDEWEB)

Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

2015-08-31

In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

DEFF Research Database (Denmark)

Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

2017-01-01

In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

Carbons, ionic liquids and quinones for electrochemical capacitors

Directory of Open Access Journals (Sweden)

Raul eDiaz

2016-04-01

Full Text Available Carbons are the main electrode materials used in electrochemical capacitors, which are electrochemical energy storage devices with high power densities and long cycling lifetimes. However, increasing their energy density will improve their potential for commercial implementation. In this regard, the use of high surface area carbons and high voltage electrolytes are well known strategies to increase the attainable energy density, and lately ionic liquids have been explored as promising alternatives to current state of the art acetonitrile-based electrolytes. Also, in terms of safety and sustainability ionic liquids are attractive electrolyte materials for electrochemical capacitors. In addition, it has been shown that the matching of the carbon pore size with the electrolyte ion size further increases the attainable electric double layer (EDL capacitance and energy density.The use of pseudocapacitive reactions can significantly increase the attainable energy density, and quinonic-based materials offer a potentially sustainable and cost effective research avenue for both the electrode and the electrolyte. This perspective will provide an overview of the current state of the art research on electrochemical capacitors based on combinations of carbons, ionic liquids and quinonic compounds, highlighting performances and challenges and discussing possible future research avenues. In this regard, current interest is mainly focused on strategies which may ultimately lead to commercially competitive sustainable high performance electrochemical capacitors for different applications including those requiring mechanical flexibility and biocompatibility.

High Energy Density Capacitors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Capacitor size and reliability are often limiting factors in pulse power, high speed switching, and power management and distribution (PMAD) systems. T/J...

Microstrip Resonator for High Field MRI with Capacitor-Segmented Strip and Ground Plane

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

2017-01-01

) segmenting stripe and ground plane of the resonator with series capacitors. The design equations for capacitors providing symmetric current distribution are derived. The performance of two types of segmented resonators are investigated experimentally. To authors’ knowledge, a microstrip resonator, where both......, strip and ground plane are capacitor-segmented, is shown here for the first time....

Graphene/VO2 hybrid material for high performance electrochemical capacitor

International Nuclear Information System (INIS)

Deng, Lingjuan; Zhang, Gaini; Kang, Liping; Lei, Zhibin; Liu, Chunling; Liu, Zong-Huai

2013-01-01

Graphical abstract: Graphene/VO 2 hybrid materials are prepared by one-step simultaneous hydrothermal reduction technology. The prepared graphene (1.0)/VO 2 hybrid material shows a specific capacitances of 225 F g −1 in 0.5 mol L −1 K 2 SO 4 solution. Furthermore, an asymmetric electrochemical capacitor with graphene (1.0)/VO 2 as a positive electrode and graphene as a negative electrode is assembled, and it can work in a cell voltage of 1.7 V and show excellent capacitive property. - Highlights: • Graphene/VO 2 hybrid material has been prepared by one-step hydrothermal reduction. • Graphene/VO 2 hybrid material exhibits high specific capacitance. • An asymmetric capacitor working at 1.7 V in aqueous solution is assembled based on graphene/VO 2 electrode. • The asymmetric capacitor exhibits high energy density. - Abstract: Vanadium oxides have attracted significant attention for electrochemical capacitor because of their extensive multifunctional properties. In the present work, graphene/VO 2 (RG/VO 2 ) hybrid materials with different RG amounts are prepared in a mixture of ammonium vanadate, formic acid and graphite oxide (GO) nanosheets by one-step simultaneous hydrothermal reduction technology. The hydrothermal treatment makes the reduction of GO into RG and the formation of VO 2 particles with starfruit morphology. The starfruit-like VO 2 particles are uniformly embedded in the hole constructed by RG nanosheets, which makes the electrode–electrolyte contact better. A high specific capacitance of 225 F g −1 has been achieved for RG(1.0)/VO 2 electrode with RG content of 26 wt% in 0.5 mol L −1 K 2 SO 4 electrolyte. An asymmetrical electrochemical capacitor is assembled by using RG(1.0)/VO 2 as positive electrode and RG as negative electrode, and it can be reversibly charged–discharged at a cell voltage of 1.7 V in 0.5 mol L −1 K 2 SO 4 electrolyte. The asymmetrical capacitor can deliver an energy density of 22.8 Wh kg −1 at a power density

Electrochemical properties of arc-black and carbon nano-balloon as electrochemical capacitor electrodes

International Nuclear Information System (INIS)

Sato, T; Suda, Y; Uruno, H; Takikawa, H; Tanoue, H; Ue, H; Aoyagi, N; Okawa, T; Shimizu, K

2012-01-01

In this study, we used two types of carbon nanomaterials, arc-black (AcB) which has an amorphous structure and carbon nano-balloon (CNB) which has a graphitic structure as electrochemical capacitor electrodes. We made a coin electrode from these carbon materials and fabricated an electric double-layer capacitor (EDLC) that sandwiches a separator between the coin electrodes. On the other hand, RuO 2 was loaded on these carbon materials, and we fabricated a pseudo-capacitor that has an ion insertion mechanism into RuO 2 . For comparison with these carbon materials, activated carbon (AC) was also used for a capacitor electrode. The electrochemical properties of all the capacitors were evaluated in 1M H 2 SO 4 aqueous solution. As a result of EDLC performance, AcB electrode had a higher specific capacitance than AC electrode at a high scan rate (≥ 100 mV/s). In the evaluation of pseudo-capacitor performance, RuO 2 -loaded CNB electrode showed a high specific capacitance of 734 F/g per RuO 2 weight.

A new method of optimal capacitor switching based on minimum spanning tree theory in distribution systems

Science.gov (United States)

Li, H. W.; Pan, Z. Y.; Ren, Y. B.; Wang, J.; Gan, Y. L.; Zheng, Z. Z.; Wang, W.

2018-03-01

According to the radial operation characteristics in distribution systems, this paper proposes a new method based on minimum spanning trees method for optimal capacitor switching. Firstly, taking the minimal active power loss as objective function and not considering the capacity constraints of capacitors and source, this paper uses Prim algorithm among minimum spanning trees algorithms to get the power supply ranges of capacitors and source. Then with the capacity constraints of capacitors considered, capacitors are ranked by the method of breadth-first search. In term of the order from high to low of capacitor ranking, capacitor compensation capacity based on their power supply range is calculated. Finally, IEEE 69 bus system is adopted to test the accuracy and practicality of the proposed algorithm.

Online MOS Capacitor Characterization in LabVIEW Environment

Directory of Open Access Journals (Sweden)

Chinmay K Maiti

2009-08-01

Full Text Available We present an automated evaluation procedure to characterize MOS capacitors involving high-k gate dielectrics. Suitability of LabVIEW environment for online web-based semiconductor device characterization is demonstrated. Developed algorithms have been successfully applied to automate the MOS capacitor measurements for Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. Implementation of the algorithm for use as a remote internet-based characterization tool where the client and server communicate with each other via web services is also shown.

Numerical investigation of phase change materials thermal capacitor for pipe flow

Directory of Open Access Journals (Sweden)

Kurnia Jundika Candra

2017-01-01

Full Text Available This study addresses the performance of phase change material as thermal capacitor. A computational fluid dynamics (CFD model is developed to take into account the conjugate heat transfer between water as the heat transfer fluid (HTF and PCM as thermal capacitor. A pulsating inlet temperature with constant inlet velocity is prescribed to represent temperature variation. The performance of thermal capacitor is evaluated by closely monitoring outlet temperature and comparing it with inlet temperature to examine the reduction in temperature fluctuation. To intensify heat transfer between HTF and PCM, extended surfaces (fins are installed on PCM side. The results indicate that PCM thermal capacitor can reduce temperature fluctuation by ∼ 1 °C. This reduction can be improved further when extended surface is installed with ∼ 1.5 °C reduction in temperature fluctuation is achieved. Moreover, it is found that the maximum temperature is delayed at the outlet due to slow conjugate heat transfer between HTF and PCM. Inlet velocity is found to have considerable influence of the temperature fluctuation reduction: Slower inlet velocity results in a better temperature fluctuation reduction. This study is expected to serve as a guideline in designing PCM-based thermal capacitor.

Influence of Mixed Solvent on the Electrochemical Property of Hybrid Capacitor.

Science.gov (United States)

Lee, Byunggwan; Yoon, J R

2015-11-01

The hybrid capacitors (2245 size, cylindrical type) were prepared by using activated carbon cathode and Li4Ti5O12 anode. In order to improve the cell operation at high temperature range, propylene carbonate (PC) was used in combination with acetonitrile (AN) with volume ratio of 7:3, 5:5, and 3:7, respectively. We investigated the electrochemical behavior of the hybrid capacitors that enabled cell operation with stability at high temperature. The organic electrolyte of hybrid capacitor containing PC and AN with a volume ratio 7:3 intended to exhibit highly reversible cycle performance with good capacity retention at 60 degrees C after 2200 cycles. From this study, it has been found that the very strong influence of the solvent nature on the characteristics of hybrid capacitor, and the difference in performance associated with the two solvents.

High Energy Density Polymer Film Capacitors

National Research Council Canada - National Science Library

Boufelfel, Ali

2006-01-01

High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

Mission Profile Translation to Capacitor Stresses in Grid-Connected Photovoltaic Systems

DEFF Research Database (Denmark)

Yang, Yongheng; Ma, Ke; Wang, Huai

2014-01-01

DC capacitors are widely adopted in grid-connected PhotoVoltaic(PV) systems for power stabilization and control decoupling. They have become one of the critical components in grid-connected PV inverters in terms of cost, reliability and volume. The electrical and thermal stresses of the DC...... stresses of the DC capacitors under both normal and abnormal grid conditions. As a consequence, this investigation provides new insights into the sizing and reliability prediction of those capacitors with respect to priorart studies. Two study cases on a single-stage PV inverter and a two-stage PV inverter...

Application of proton conducting polymeric electrolytes to electrochemical capacitors

International Nuclear Information System (INIS)

Morita, Masayuki; Qiao, Jin-Li; Yoshimoto, Nobuko; Ishikawa, Masashi

2004-01-01

Non-aqueous polymeric gel complexes composed of poly(ethylene oxide)-modified polymethacrylate (PEO-PMA) dissolving anhydrous H 3 PO 4 have been examined as solid electrolytes of electrochemical capacitors. High ionic conductivity of ∼10 -3 S cm -1 (at 70 deg. C) was obtained for non-aqueous gel systems based on PEO-PMA with proper amounts of organic plasticizers. The ionic conductivity depended on the composition of the gel, especially on the content of the dopant H 3 PO 4 . A test cell of the electric double layer capacitor (EDLC) was assembled using the present gel electrolyte with activated carbon fiber (ACF) cloth electrodes. It gave as high capacity as that obtained for the capacitor using an aqueous liquid electrolyte. High rate capability was obtained for the cell operating at 90 deg. C

PLZT capacitor and method to increase the dielectric constant

Science.gov (United States)

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Current status of environmental, health, and safety issues of electrochemical capacitors for advanced vehicle applications

Energy Technology Data Exchange (ETDEWEB)

Vimmerstedt, L J; Hammel, C J

1997-04-01

Electrochemical capacitors are a candidate for traction power assists in hybrid electric vehicles (HEVs). Other advanced automotive applications, while not the primary focus of current development efforts, are also possible. These include load leveling high-energy batteries, power conditioning electronics, electrically hated catalysts, electric power steering, and engine starter power. Higher power and longer cycle life are expected for electrochemical capacitors than for batteries. Evaluation of environmental, health, and safety (EH and S) issues of electrochemical capacitors is an essential part of the development and commercialization of electrochemical capacitors for advanced vehicles. This report provides an initial EH and S assessment. This report presents electrochemical capacitor electrochemistry, materials selection, intrinsic material hazards, mitigation of those hazards, environmental requirements, pollution control options, and shipping requirements. Most of the information available for this assessment pertains to commercial devices intended for application outside the advanced vehicle market and to experiment or prototype devices. Electrochemical capacitors for power assists in HEVs are not produced commercially now. Therefore, materials for advanced vehicle electrochemical capacitors may change, and so would the corresponding EH and S issues. Although changes are possible, this report describes issues for likely electrochemical capacitor designs.

Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

Directory of Open Access Journals (Sweden)

Nikica Budimir

2007-03-01

Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

Bioorganic nanodots for non-volatile memory devices

Energy Technology Data Exchange (ETDEWEB)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

2013-12-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

Radiation evaluation of commercial ferroelectric nonvolatile memories

International Nuclear Information System (INIS)

Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

1991-01-01

This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

Improved Dielectric Films For Capacitors

Science.gov (United States)

Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

1994-01-01

Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

Condition Monitoring for DC-link Capacitors Based on Artificial Neural Network Algorithm

DEFF Research Database (Denmark)

Soliman, Hammam Abdelaal Hammam; Wang, Huai; Gadalla, Brwene Salah Abdelkarim

2015-01-01

hardware will reduce the cost, and therefore could be more promising for industry applications. A condition monitoring method based on Artificial Neural Network (ANN) algorithm is therefore proposed in this paper. The implementation of the ANN to the DC-link capacitor condition monitoring in a back......In power electronic systems, capacitor is one of the reliability critical components . Recently, the condition monitoring of capacitors to estimate their health status have been attracted by the academic research. Industry applications require more reliable power electronics products...... with preventive maintenance. However, the existing capacitor condition monitoring methods suffer from either increased hardware cost or low estimation accuracy, being the challenges to be adopted in industry applications. New development in condition monitoring technology with software solutions without extra...

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed

2016-09-05

In this paper, a frequency output temperature sensor based on a 4% Niobium doped 20/80 Zr/Ti Lead Zirconate Titanate (PNZT) capacitor is proposed. The sensor capacitance vs temperature and capacitance vs voltage characteristics are experimentally measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity. The measured sensor characteristics show less than ∼0.7°C deviation from the ideal linear response. A Wien bridge oscillator based temperature sensor is demonstrated based on the PNZT capacitors. Mathematical analysis for the effect of the op-amp finite unity-gain frequency on the sensor circuit oscillation frequency is provided. The experimentally realized frequency output temperature sensor shows -17.6% relative frequency change for a temperature change from 10°C to 100°C. The proposed capacitive temperature sensor can be used in low-power smart sensor nodes without the need for extensive calibration. © 2015 IEEE.

Gamma radiation in ceramic capacitors: a study for space missions

Science.gov (United States)

dos Santos Ferreira, Eduardo; Sarango Souza, Juliana

2017-10-01

We studied the real time effects of the gamma radiation in ceramic capacitors, in order to evaluate the effects of cosmic radiation on these devices. Space missions have electronic circuits with various types of devices, many studies have been done on semiconductor devices exposed to gamma radiation, but almost no studies for passive components, in particular ceramic capacitors. Commercially sold ceramic capacitors were exposed to gamma radiation, and the capacitance was measured before and after exposure. The results clearly show that the capacitance decreases with exposure to gamma radiation. We confirmed this observation in a real time capacitance measurement, obtained using a data logging system developed by us using the open source Arduino platform.

Feasibility of nonvolatile buffers in capillary electrophoresis-electrospray ionization-mass spectrometry of proteins

NARCIS (Netherlands)

Eriksson, Jonas H.C.; Mol, Roelof; Somsen, Govert W.; Hinrichs, Wouter L.J.; Frijlink, Henderik W.; de Jong, Gerhardus J.

2004-01-01

The combination of capillary electrophoresis (CE) and electrospray ionization-mass spectrometry (ESI-MS) via a triaxial interface was studied as a potential means for the characterization of intact proteins. To evaluate the possibility to use a nonvolatile electrolyte for CE, the effect of sodium

Pre-charging of module capacitors of MMC when the module ...

Indian Academy of Sciences (India)

Shamkant D Joshi

The module capacitors need to be pre-charged, to power the control circuit. The problem faced while ... It consists of three legs to share a common DC link voltage. Each of these legs has ... Consider the stability of a system with only one capacitor with negative ..... number of wires because separate wires are not required for.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

NARCIS (Netherlands)

Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L.; Tiggelman, M.P.J.; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

2009-01-01

Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100

Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

Science.gov (United States)

Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

2016-08-17

The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

FEATURES OF SELECTION OF CAPACITOR BANKS IN ELECTRIC NETWORKS WITH INTERHARMONIC SOURCES

Directory of Open Access Journals (Sweden)

Yu. L. Sayenko

2017-10-01

Full Text Available Purpose. Development of a methodology for selecting capacitor bank parameters designed to compensate for reactive power, if there are sources of interharmonics in the electrical network. Development of a methodology for selecting the parameters of capacitor banks that are part of resonant filters of higher harmonics and interharmonics. Methodology. For the research, we used the decomposition of the non-sinusoidal voltage (current curve into the sum of the harmonic components with frequencies as multiple of the fundamental frequency - higher harmonics, and not multiple fundamental frequencies - interharmonics. Results. Expressions are obtained for checking the absence of inadmissible overloads of capacitor banks by voltage and current in the presence of voltage (current in the curve, along with higher harmonics, of the discrete spectrum of interharmonics. When selecting capacitor banks, both for reactive power compensation and for filter-compensating devices, the necessity of constructing the frequency characteristics of the input and mutual resistances of the electrical network for analyzing possible resonant phenomena is confirmed. Originality. The expediency of simplified calculation of the voltage variation at the terminals of the banks of the capacitors of the higher harmonics filters and interharmonics due to the presence of the reactor in the filters is substantiated. Practical value. The use of the proposed approaches will make it possible to resolve a number of issues related to the choice of parameters of capacitor banks in networks with nonlinear loads, including: ensuring reliable operation of capacitor banks when their parameters deviate from their nominal values, as well as deviations in the parameters of the supply network and sources of harmonic distortion; ensuring the absence of resonant phenomena at frequencies of both higher harmonics and interharmonics.

Programmable, very low noise current source

Science.gov (United States)

Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

2014-12-01

We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2004-09-01

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

A Review of the Condition Monitoring of Capacitors in Power Electronic Converters

DEFF Research Database (Denmark)

Soliman, Hammam Abdelaal Hammam; Wang, Huai; Blaabjerg, Frede

2015-01-01

Capacitor is one of the reliability critical components in power electronic systems. In the last two decades, many efforts in the academic research have been devoted to the condition monitoring of capacitors to estimate their health status. Industry applications demand more reliable power...... electronics products with preventive maintenance. Nevertheless, most of the developed capacitor condition monitoring technologies are rarely adopted by industry due to the complexity, increased cost and other relevant issues. An overview of the prior-art research in this area is therefore needed to justify....... Therefore, this paper firstly classifies the capacitor condition monitoring methods into three categories, then the respective technology evolution from 1993 to 2015 is summarized. Remarks on the state-of-the-art research and the future opportunities targeting for practical industry applications are given....

A Review of the Condition Monitoring of Capacitors in Power Electronic Converters

DEFF Research Database (Denmark)

Soliman, Hammam Abdelaal Hammam; Wang, Huai; Blaabjerg, Frede

2016-01-01

Capacitors are one type of reliability-critical components in power electronic systems. In the last two decades, many efforts in academic research have been devoted to the condition monitoring of capacitors to estimate their health status. Industry applications are demanding more reliable power...... electronics products with preventive maintenance. Nevertheless, most of the developed capacitor condition monitoring technologies are rarely adopted by industry due to the complexity, increased cost, and other relevant issues. An overview of the prior-art research in this area is therefore needed to justify......, this paper first classifies the capacitor condition monitoring methods into three categories, then the respective technology evolution in the last two decades is summarized. Finally, the state-of-the-art research and the future opportunities targeting for industry applications are given....

Capacitors and Resistance-Capacitance Networks.

Science.gov (United States)

Balabanian, Norman; Root, Augustin A.

This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

International Nuclear Information System (INIS)

Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

2008-01-01

We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

Science.gov (United States)

Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

2018-01-01

In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

100 kV, 80 kJ low-induction capacitor module

International Nuclear Information System (INIS)

Andrezen, A.B.; Burtsev, V.A.; Vodovozov, V.M.; Drozdov, A.A.; Makeev, G.M.

1980-01-01

A low induction capacitor module has been developed to investigate THETA- and Z-pinch plasma. Energy output time of the module lays in the microsecond range. The 100 kV, 80 kJ module is based on low-induction castor capasitors. The module is equipped with two solid dielectric dischargers, the system of discharger ignition protection system and automatic system for charging of capacitors. The module discharge period T 0 =5.6 μs. The capacitor module has been used in investigations of electric explosions of Al plane foils in the pulverized quartz. The overvoltage Usub(max)/Usub(o) approximately equal to 10 has been received at the maximum intensity of the electric field Esub(max) approximately equal to 12 kV/sm [ru

Physics based Degradation Modeling and Prognostics of Electrolytic Capacitors under Electrical Overstress Conditions

Data.gov (United States)

National Aeronautics and Space Administration — This paper proposes a physics based degradation modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors are critical components in...

On battery-less autonomous polygeneration microgrids: Investigation of the combined hybrid capacitors/hydrogen alternative

International Nuclear Information System (INIS)

Kyriakarakos, George; Piromalis, Dimitrios D.; Arvanitis, Konstantinos G.; Dounis, Anastasios I.; Papadakis, George

2015-01-01

Highlights: • A battery-less autonomous polygeneration microgrid is technically feasible. • Laboratory testing of hybrid capacitors. • Investigation of hybrid capacitors utilization along with hydrogen subsystem. - Abstract: The autonomous polygeneration microgrid topology aims to cover holistically the needs in remote areas as far as electrical power, potable water through desalination, fuel for transportation in the form of hydrogen, heating and cooling are concerned. Deep discharge lead acid batteries are mostly used in such systems, associated with specific disadvantages, both technical and environmental. This paper investigated the possibility of replacing the battery bank from a polygeneration microgrid with a hybrid capacitor bank and more intensive utilization of a hydrogen subsystem. Initially commercial hybrid capacitors were tested under laboratory conditions and based on the respective results a case study was performed. The optimized combination of hybrid capacitors and higher hydrogen usage was then investigated through simulations and compared to a polygeneration microgrid featuring deep discharge lead acid batteries. From the results it was clear that it is technically possible to exchange the battery bank with a hybrid capacitor bank and higher hydrogen utilization. From the economic point of view, the current cost of the hybrid capacitors and the hydrogen components is high which leads to higher overall cost in comparison with deep discharge lead acid batteries. Taking into account, though, the decreasing cost prospects and trends of both the hybrid capacitors and the hydrogen components it is expected that this approach will become economically competitive in a few years

Development and experimental study of oil-free capacitor module for plasma focus device

Science.gov (United States)

Sharma, Ravindra Kumar; Sharma, Archana

2017-03-01

This development is concerned with the compact capacitor module for a plasma focus device. Oil-free, non-standard geometry capacitors are designed and developed for high current delivery in sub-microseconds time. Metalized dielectric film based pulse capacitor becomes progressively less viable at currents above 10 kA. It is due to reliability and energy scaling difficulties, based on effects such as vaporization, high resistivity, and end connection. Bipolar electrolytic capacitors are also not preferred due to their limited life and comparatively low peak current delivery. Bi-axially oriented polypropylene (BOPP) film with extended aluminum foil is a combination to deliver moderately high power. But, electrically weak points, relative permittivity, and the edge gap margins have made its adoption difficult. A concept has been developed in lab for implementing the above combination in a less complex and costly manner. This paper concerns the development and testing process techniques for quite different hollow cylindrical, oil-free capacitors (4 μ F , 10 kV, 20 nH). Shot life of 1000 has been experimentally performed on the test bed at its rated energy density level. The technological methods and engineering techniques are now available and utilized for manufacturing and testing of BOPP film based oil-free capacitors.

Location and determination of steps of capacitors in shunt for distribution power lines; Localizacion y determinacion de pasos de capacitores en derivacion para lineas de distribucion

Energy Technology Data Exchange (ETDEWEB)

Pampin Vergara, Gabriela; Sarmiento Uruchurtu, Hector [Instituto de Investigaciones Electricas, Cuernavaca, Morelos (Mexico)

2001-07-01

A methodology is presented to determine the optimal location of the capacitor banks in shunt for distribution networks. The proposed tool allows knowing the bank type to install (fixed, disconnect able or of pass), as well as the electrical parameters of the feeder and the economic benefit that the banks of capacitors represent, with a minimum of input data. Its development in a spreadsheet allows the analysis of numerous alternatives in an easy way. The method is based on that the structure of the feeders of distribution is, generally, of radial type, with which, and by means of an iterative process, the optimal location of the capacitor banks in shunt is looked for. The type of bank is determined based of the demand, as well as the number of steps. The results of the analysis in feeders of the network of the central area are shown. [Spanish] Se presenta una metodologia para determinar la localizacion optima de los bancos de capacitores en derivacion en redes de distribucion. La herramienta propuesta permite conocer el tipo de banco a instalar (fijo, desconcectable o de paso), asi como los parametros electricos del alimentador y el beneficio economico que representan los bancos de capacitores, con un minimo de datos de entrada. Su desarrollo en una hoja de calculo permite el analisis de numerosas alternativas de manera facil. El metodo se basa en que la estructura de los alimentadores de distribucion es, por lo general, de tipo radial, con lo cual, y por medio de un proceso iterativo, se busca la localizacion optima de los bancos de capacitores en derivacion. Se determina el tipo de banco en funcion de la demanda, asi como el numero de pasos. Se muestran resultados del analisis en alimentadores de la red del area central.

Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

International Nuclear Information System (INIS)

Malekie, Shahryar; Salehpour, Behrooz

2017-01-01

In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

A Novel Flying Capacitor Transformerless Inverter for Single-Phase Grid Connected Solar Photovoltaic System

DEFF Research Database (Denmark)

Siwakoti, Yam Prasad; Blaabjerg, Frede

2016-01-01

This paper proposes a new single-phase flying capacitor transformerless PV inverter for grid-connected photovoltaic (PV) systems. The neutral of the grid can be directly connected to the negative terminal of the source (PV). It consists of four power switches, one diode, one capacitor and a small...... and some topologies, which requires two times of the peak ac-voltage magnitude) and, (5) the flying capacitor charges every switching cycle, which reduces the size of the required capacitor with switching frequency. In addition, industry standard half bridge module can be used in the new inverter without...

Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

Energy Technology Data Exchange (ETDEWEB)

Malekie, Shahryar [Nuclear Science and Technology Research Institute, Karaj (Iran, Islamic Republic of). Radiation Application Research School; Salehpour, Behrooz [Tabriz Univ. (Iran, Islamic Republic of). Faculty of Physics

2017-09-01

In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

Neural network for optimal capacitor placement and its impact on power quality in electric distribution systems

International Nuclear Information System (INIS)

Mohamed, A.A.E.S.

2013-01-01

Capacitors are widely installed in distribution systems for reactive power compensation to achieve power and energy loss reduction, voltage regulation and system capacity release. The extent of these benefits depends greatly on how the capacitors are placed on the system. The problem of how to place capacitors on the system such that these benefits are achieved and maximized against the cost associated with the capacitor placement is termed the general capacitor placement problem. The capacitor placement problem has been formulated as the maximization of the savings resulted from reduction in both peak power and energy losses considering capacitor installation cost and maintaining the buses voltage within acceptable limits. After an appropriate analysis, the optimization problem was formulated in a quadratic form. For solving capacitor placement a new combinatorial heuristic and quadratic programming technique has been presented and applied in the MATLAB software. The proposed strategy was applied on two different radial distribution feeders. The results have been compared with previous works. The comparison showed the validity and the effectiveness of this strategy. Secondly, two artificial intelligence techniques for predicting the capacitor switching state in radial distribution feeders have been investigated; one is based on basis Radial Basis Neural Network (RBNN) and the other is based on Adaptive Neuro-Fuzzy Inference System (ANFIS). The ANFIS technique gives better results with a minimum total error compared to RBNN. The learning duration of ANFIS was very short than the neural network case. It implied that ANFIS reaches to the target faster than neural network. Thirdly, an artificial intelligence (RBNN) approach for estimation of transient overvoltage during capacitor switching has been studied. The artificial intelligence approach estimated the transient overvoltages with a minimum error in a short computational time. Finally, a capacitor switching

An innovative ultra-capacitor driven shape memory alloy actuator with an embedded control system

International Nuclear Information System (INIS)

Li, Peng; Song, Gangbing

2014-01-01

In this paper, an innovative ultra-capacitor driven shape memory alloy (SMA) actuator with an embedded control system is proposed targeting high power high-duty cycle SMA applications. The ultra-capacitor, which is capable of delivering massive amounts of instantaneous current in a compact dimension for high power applications, is chosen as the main component of the power supply. A specialized embedded system is designed from the ground up to control the ultra-capacitor driven SMA system. The control of the ultra-capacitor driven SMA is different from that of a regular constant voltage powered SMA system in that the energy and the voltage of the ultra-capacitor decrease as the system load increases. The embedded control system is also different from a computer-based control system in that it has limited computational power, and the control algorithm has to be designed to be simple while effective so that it can fit into the embedded system environment. The problem of a variable voltage power source induced by the use of the ultra-capacitor is solved by using a fuzzy PID (proportional integral and derivative) control. The method of using an ultra-capacitor to drive SMA actuators enabled SMA as a good candidate for high power high-duty cycle applications. The proposed embedded control system provides a good and ready-to-use solution for SMA high power applications. (paper)

Step-down switched-capacitor quasi-resonant PWM converter with continuous conversion ratio

NARCIS (Netherlands)

Turhan, M.; Hendrix, M.A.M.; Duarte, J.L.

2015-01-01

Inherent disadvantages of conventional switched-capacitor converters (SCC) are their discrete conversion ratio and inefficient energy transfer. In order to soften these downsides, a step-down switched-capacitor quasi-resonant PWM converter is proposed. The operation modes and steady-state

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

International Nuclear Information System (INIS)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

2013-01-01

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

Adjustable movable capacitors bank at 20 or 30 MVAr in 115 kV; Banco movil de capacitores ajustable a 20 o 30 MVAr en 115 kV

Energy Technology Data Exchange (ETDEWEB)

Ponce Velez, Marco A; Lopez Velazquez, Juan Jose [Instituto de Investigaciones Electricas, Temixco, Morelos (Mexico); Lopez Tagle, Alfredo; Aragon Garcia, Hector [Comision Federal de Electricidad (Mexico)

1999-07-01

The use of fixed capacitors banks in distribution and transmission systems is a useful tool to compensate the demand of reactive power and the drop of voltage of the power lines. Nevertheless, unforeseen happenings can be originated that could cause decompensation in the system reliability. Due to the previous fact, the Transmission and Transformation Coordinator (CTT) of the Comision Federal de Electricidad (CFE) asked for the design and the construction of a movable bank of capacitors for an emergent compensation of reactive power. In this article it is presented the most relevant of the design, the construction and the operation of the movable bank of capacitors developed in the Instituto de Investigaciones Electricas (IIE). [Spanish] El empleo de bancos capacitadores fijos en los sistemas de distribucion y transmision es una herramienta util para compensar la demanda de reactivos y la caida de tension de las lineas. Sin embargo, se pueden originar imprevistos que descompensan la confiabilidad del sistema. Debido a lo anterior, la Coordinadora de Transmision y Transformacion (CTT) de la Comision Federal de Electricidad (CFE) solicito el diseno y la construccion de un banco movil de capacitores para una compensacion emergente de potencia reactiva. En este articulo se presenta lo mas relevante del diseno, la construccion y la operacion del banco movil de capacitores desarrollado en el Instituto de Investigaciones Electricas (IIE).

A Digitally Programmable Differential Integrator with Enlarged Time Constant

Directory of Open Access Journals (Sweden)

S. K. Debroy

1994-12-01

Full Text Available A new Operational Amplifier (OA-RC integrator network is described. The novelties of the design are used of single grounded capacitor, ideal integration function realization with dual-input capability and design flexibility for extremely large time constant involving an enlargement factor (K using product of resistor ratios. The aspect of the digital control of K through a programmable resistor array (PRA controlled by a microprocessor has also been implemented. The effect of the OA-poles has been analyzed which indicates degradation of the integrator-Q at higher frequencies. An appropriate Q-compensation design scheme exhibiting 1 : |A|2 order of Q-improvement has been proposed with supporting experimental observations.

Note: Compact high voltage pulse transformer made using a capacitor bank assembled in the shape of primary.

Science.gov (United States)

Shukla, Rohit; Banerjee, Partha; Sharma, Surender K; Das, Rashmita; Deb, Pankaj; Prabaharan, T; Das, Basanta; Adhikary, Biswajit; Verma, Rishi; Shyam, Anurag

2011-10-01

The experimental results of an air-core pulse transformer are presented, which is very compact (capacitor bank that is fabricated in such a way that the capacitor bank with its switch takes the shape of single-turn rectangular shaped primary of the transformer. A high voltage capacitor assembly (pulse-forming-line capacitor, PFL) of 5.1 nF is connected with the secondary of transformer. The transformer output voltage is 160 kV in its second peak appearing in less than 2 μS from the beginning of the capacitor discharge. The primary capacitor bank can be charged up to a maximum of 18 kV, with the voltage delivery of 360 kV in similar capacitive loads.

Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

Science.gov (United States)

Winsor, Paul; Scholz, Tim; Hudis, Martin; Slenes, Kirk M.

1999-01-01

A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

Directory of Open Access Journals (Sweden)

Cuidong Xu

2015-09-01

Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

Pluto's Nonvolatile Chemical Compounds

Science.gov (United States)

Grundy, William M.; Binzel, Richard; Cook, Jason C.; Cruikshank, Dale P.; Dalle Ore, Cristina M.; Earle, Alissa M.; Ennico, Kimberly; Jennings, Donald; Howett, Carly; Kaiser, Ralf-Ingo; Linscott, Ivan; Lunsford, A. W.; Olkin, Catherine B.; Parker, Alex Harrison; Parker, Joel Wm.; Philippe, Sylvain; Protopapa, Silvia; Quirico, Eric; Reuter, D. C.; Schmitt, Bernard; Singer, Kelsi N.; Spencer, John R.; Stansberry, John A.; Stern, S. Alan; Tsang, Constantine; Verbiscer, Anne J.; Weaver, Harold A.; Weigle, G. E.; Young, Leslie

2016-10-01

Despite the migration of Pluto's volatile ices (N2, CO, and CH4) around the surface on seasonal timescales, the planet's non-volatile materials are not completely hidden from view. They occur in a variety of provinces formed over a wide range of timescales, including rugged mountains and chasms, the floors of mid-latitude craters, and an equatorial belt of especially dark and reddish material typified by the informally named Cthulhu Regio. NASA's New Horizons probe observed several of these regions at spatial resolutions as fine as 3 km/pixel with its LEISA imaging spectrometer, covering wavelengths from 1.25 to 2.5 microns. Various compounds that are much lighter than the tholin-like macromolecules responsible for the reddish coloration, but that are not volatile at Pluto surface temperatures such as methanol (CH3OH) and ethane (C2H6) have characteristic absorption bands within LEISA's wavelength range. This presentation will describe their geographic distributions and attempt to constrain their origins. Possibilities include an inheritance from Pluto's primordial composition (the likely source of H2O ice seen on Pluto's surface) or ongoing production from volatile precursors through photochemistry in Pluto's atmosphere or through radiolysis on Pluto's surface. New laboratory data inform the analysis.This work was supported by NASA's New Horizons project.

Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

Science.gov (United States)

Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward; Kolb, Alan C.

1999-01-19

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM

Science.gov (United States)

Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling

2009-05-01

The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.

Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

International Nuclear Information System (INIS)

Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

2014-01-01

The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design.

Quasistationary magnetic field generation with a laser-driven capacitor-coil assembly.

Science.gov (United States)

Tikhonchuk, V T; Bailly-Grandvaux, M; Santos, J J; Poyé, A

2017-08-01

Recent experiments are showing possibilities to generate strong magnetic fields on the excess of 500 T with high-energy nanosecond laser pulses in a compact setup of a capacitor connected to a single turn coil. Hot electrons ejected from the capacitor plate (cathode) are collected at the other plate (anode), thus providing the source of a current in the coil. However, the physical processes leading to generation of currents exceeding hundreds of kiloamperes in such a laser-driven diode are not sufficiently understood. Here we present a critical analysis of previous results and propose a self-consistent model for the high current generation in a laser-driven capacitor-coil assembly. It accounts for three major effects controlling the diode current: the space charge neutralization, the plasma magnetization between the capacitor plates, and the Ohmic heating of the external circuit-the coil-shaped connecting wire. The model provides the conditions necessary for transporting strongly super-Alfvenic currents through the diode on the time scale of a few nanoseconds. The model validity is confirmed by a comparison with the available experimental data.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

Science.gov (United States)

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-10-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

Science.gov (United States)

Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

2017-02-22

All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

Ceramic capacitor exhibiting graceful failure by self-clearing, method for fabricating self-clearing capacitor

Science.gov (United States)

Kaufman, David Y [Chicago, IL; Saha, Sanjib [Santa Clara, CA

2006-08-29

A short-resistant capacitor comprises an electrically conductive planar support substrate having a first thickness, a ceramic film deposited over the support substrate, thereby defining a ceramic surface; and a metallic film deposited over the ceramic surface, said film having a second thickness which is less than the first thickness and which is between 0.01 and 0.1 microns.

Thin film barium strontium titanate capacitors for tunable RF front-end applications

NARCIS (Netherlands)

Tiggelman, M.P.J.

2009-01-01

In this thesis, the results of intensive electrical characterization, modeling and the design of hardware with thin film tunable capacitors, i.e., dielectric varactors, has been presented and discussed. Especially the quality factor Q and the tuning ratio of the tunable capacitors have been studied,

Optimal Capacitor Bank Capacity and Placement in Distribution Systems with High Distributed Solar Power Penetration

Energy Technology Data Exchange (ETDEWEB)

Hodge, Brian S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mather, Barry A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Cho, Gyu-Jung [Sungkyunkwan University, Korea; Oh, Yun-Sik [Sungkyunkwan University, Korea; Kim, Min-Sung [Sungkyunkwan University, Korea; Kim, Ji-Soo [Sungkyunkwan University, Korea; Kim, Chul-Hwan [Sungkyunkwan University, Korea

2018-02-01

Capacitor banks have been generally installed and utilized to support distribution voltage during period of higher load or on longer, higher impedance, feeders. Installations of distributed energy resources in distribution systems are rapidly increasing, and many of these generation resources have variable and uncertain power output. These generators can significantly change the voltage profile across a feeder, and therefore when a new capacitor bank is needed analysis of optimal capacity and location of the capacitor bank is required. In this paper, we model a particular distribution system including essential equipment. An optimization method is adopted to determine the best capacity and location sets of the newly installed capacitor banks, in the presence of distributed solar power generation. Finally we analyze the optimal capacitor banks configuration through the optimization and simulation results.

Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

KAUST Repository

Elshurafa, Amro M.

2013-08-16

In this paper, we model, fabricate, and measure an electrostatically actuated MEMS variable capacitor that utilizes a fractal geometry and serpentine-like suspension arms. Explicitly, a variable capacitor that possesses a top suspended plate with a specific fractal geometry and also possesses a bottom fixed plate complementary in shape to the top plate has been fabricated in the PolyMUMPS process. An important benefit that was achieved from using the fractal geometry in designing the MEMS variable capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement results show that the tuning range is 2.5 at a maximum actuation voltage of 10V.

Compositionally Graded Multilayer Ceramic Capacitors.

Science.gov (United States)

Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (filters and power converters.

ADAPTIVE MATHEMATICAL MODEL OF THERMAL PROCESSES IN A COSINE POWER CAPACITOR

Directory of Open Access Journals (Sweden)

D. I. Zalizny

2016-01-01

Full Text Available The existing protection and diagnostics systems are unable to detect the power capacitor abnormal heating caused by the development of its malfunctions. A diagnosis technique is presented that provides discovering such a heating at its early manifestation. The technique includes algorithms and an apparatus component in a form of a digital device, and it is based on continuous measuring of a capacitor body surface temperature, ambient temperature, voltages and currents from the power source. On the basis of measured values the active power losses in the capacitor and the temperature of the hottest point of its dielectric were calculated. Thereafter, the calculated average daily values of the temperature was analyzed, and, should the tendency of permanent increase of these values is detected, the diagnosis alarms of danger levels of abnormal heating are formed, viz. a low level, an average level, a high level and a very high level. The presented algorithms have been developed heuristically. Their final formation is possible only after years of operation of the proposed diagnosis system applied to the real objects. Because of application of the diagnosis system the probability of capacitor units’ failure will be lower and thus the dependability of the power supply may be higher. The implementation of the developed system will reduce the probability of sudden failure of capacitor units, and, correspondingly, will increase the reliability of the electricity supply system of an enterprise.

High-Speed Non-Volatile Optical Memory: Achievements and Challenges

Directory of Open Access Journals (Sweden)

Vadym Zayets

2017-01-01

Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

Use of non-volatile memories for SSC detector readout

International Nuclear Information System (INIS)

Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

1990-01-01

Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

SUPER-CAPACITOR APPLICATION IN ELECTRICAL POWER CABLE TESTING FACILITIES IN THERMAL ENDURANCE AND MECHANICAL BRACING TESTS

Directory of Open Access Journals (Sweden)

I. V. Oleksyuk

2015-01-01

Full Text Available The current-carrying cores of the electrical power cables should be resistant to effects of short-circuit currents whose values depend on the material of the core, its cross-sectional area, cable insulation properties, environment temperature, and the duration of the short-circuit current flow (1 and 3–4 sec. when tested for thermal endurance and mechanical bracing. The facilities for testing the 10 kV aluminum core cables with short-circuit current shall provide mechanical-bracing current 56,82 kA and thermal endurance current 11,16 kA. Although capacitors provide such values of the testing currents to the best advantage, utilizing conventional capacitor-units will involve large expenditures for erecting and  running a separate building. It is expedient to apply super-capacitors qua the electric power supply for testing facilities, as they are capacitors with double-electrical layer and involve the current values of tens of kilo-amperes.The insulation voltage during short-circuit current testing being not-standardized, it is not banned to apply voltages less than 10 kV when performing short-circuit thermal endurance and mechanical bracing tests for electrical power cables of 10 kV. The super-capacitor voltage variation-in-time graph consists of two regions: capacitive and resistive. The capacitive part corresponds to the voltage change consequent on the energy change in the super-capacitors. The resistive part shows the voltage variation due to the active resistance presence in the super-capacitor.The author offers the algorithm determining the number of super capacitors requisite for testing 10 kV-electrical power cables with short-circuit currents for thermal endurance and mechanical bracing. The paper shows that installation of super-capacitors in the facilities testing the cables with short-circuit currents reduces the area needed for the super-capacitors in comparison with conventional capacitors more than by one order of magnitude.

Redox-capacitor to connect electrochemistry to redox-biology.

Science.gov (United States)

Kim, Eunkyoung; Leverage, W Taylor; Liu, Yi; White, Ian M; Bentley, William E; Payne, Gregory F

2014-01-07

It is well-established that redox-reactions are integral to biology for energy harvesting (oxidative phosphorylation), immune defense (oxidative burst) and drug metabolism (phase I reactions), yet there is emerging evidence that redox may play broader roles in biology (e.g., redox signaling). A critical challenge is the need for tools that can probe biologically-relevant redox interactions simply, rapidly and without the need for a comprehensive suite of analytical methods. We propose that electrochemistry may provide such a tool. In this tutorial review, we describe recent studies with a redox-capacitor film that can serve as a bio-electrode interface that can accept, store and donate electrons from mediators commonly used in electrochemistry and also in biology. Specifically, we (i) describe the fabrication of this redox-capacitor from catechols and the polysaccharide chitosan, (ii) discuss the mechanistic basis for electron exchange, (iii) illustrate the properties of this redox-capacitor and its capabilities for promoting redox-communication between biology and electrodes, and (iv) suggest the potential for enlisting signal processing strategies to "extract" redox information. We believe these initial studies indicate broad possibilities for enlisting electrochemistry and signal processing to acquire "systems level" redox information from biology.

Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3

OpenAIRE

Takeshi, Yokota; Shotaro, Murata; Takaaki, Kuribayashi; Manabu, Gomi

2008-01-01

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hys...

A noise level prediction method based on electro-mechanical frequency response function for capacitors.

Science.gov (United States)

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

Energy Technology Data Exchange (ETDEWEB)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

2009-06-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

International Nuclear Information System (INIS)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

2009-01-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

A lithographically patterned capacitor with horizontal nanowires of length 2.5 mm.

Science.gov (United States)

Yan, Wenbo; Thai, Mya Le; Dutta, Rajen; Li, Xiaowei; Xing, Wendong; Penner, Reginald M

2014-04-09

A symmetrical hybrid capacitor consisting of interdigitated, horizontal nanowires is described. Each of the 750 nanowires within the capacitor is 2.5 mm in length, consisting of a gold nanowire core (40 × ≈200 nm) encapsulated within a hemicylindrical shell of δ-phase MnO2 (thickness = 60-220 nm). These Au@δ-MnO2 nanowires are patterned onto a planar glass surface using lithographically patterned nanowire electrodeposition (LPNE). A power density of 165 kW/kg and energy density of 24 Wh/kg were obtained for a typical nanowire array in which the MnO2 shell thickness was 68 ± 8 nm. Capacitors incorporating these ultralong nanowires lost ≈10% of their capacity rapidly, during the first 20 discharge cycles, and then retained 90% of their maximum capacity for the ensuing 6000 cycles. The ability of capacitors consisting of ultralong Au@δ-MnO2 nanowires to simultaneously deliver high power and high capacity with acceptable cycle life is demonstrated.

Physics Based Electrolytic Capacitor Degradation Models for Prognostic Studies under Thermal Overstress

Science.gov (United States)

Kulkarni, Chetan S.; Celaya, Jose R.; Goebel, Kai; Biswas, Gautam

2012-01-01

Electrolytic capacitors are used in several applications ranging from power supplies on safety critical avionics equipment to power drivers for electro-mechanical actuators. This makes them good candidates for prognostics and health management research. Prognostics provides a way to assess remaining useful life of components or systems based on their current state of health and their anticipated future use and operational conditions. Past experiences show that capacitors tend to degrade and fail faster under high electrical and thermal stress conditions that they are often subjected to during operations. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

Migration of residual nonvolatile and inorganic compounds from recycled post-consumer PET and HDPE

Energy Technology Data Exchange (ETDEWEB)

Dutra, Camila; Reyes, Felix G.R., E-mail: reyesfgr@fea.unicamp.br [Universidade de Campinas (UNICAMP), SP (Brazil). Escola de Engenharia dos Alimentos. Dept. de Ciencias dos Alimentos; Freire, Maria Teresa de A. [Universidade de Sao Paulo (USP), Pirassununga, SP (Brazil). Fac. de Ciencia Animal e Engenharia dos Alimentos. Dept. de Engenharia dos Alimentos; Nerin, Cristina; Bentayeb, Karim; Rodriguez-Lafuente, Angel; Aznar, Margarita [Dept. of Analytical Chemistry, Arago Inst. of Engineering Research, University of Zaragoza (Spain)

2014-04-15

Migration of nonvolatile and inorganic residual compounds from post-consumer recycled polyethylene terephthalate (PET) submitted to cleaning processes for subsequent production of materials intended to food contact, as well as from multilayer packaging material containing post-consumer recycled high-density polyethylene (HDPE) was determined. Tests were carried out using food simulant. Nonvolatile organic contaminants from PET, determined by liquid chromatography-mass spectrometry (UPLC-QqQ/MS), showed significant migration reduction as consequence of the more complex cleaning technologies applied. However, contaminants not allowed by Brazilian and European Union regulations were identified even in deep cleaning samples. Results from multilayer HDPE showed a greater number of contaminants when compared to recycled pellets. Inorganic contaminants, determined by inductively coupled plasma mass spectrometry were below the acceptable levels. Additional studies for identification and quantitation of unknown molecules which were not possible to identify in this study by UPLC-QqQ/MS are required to ascertain the safety of using post-consumer recycled packaging material. (author)

A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; ten Elshof, Johan E.

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3 μm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at

A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; Elshof, J.E. ten

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3µm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at low

Improved Battery Charger Circuit Utilizing Reduced DC-link Capacitors

Directory of Open Access Journals (Sweden)

Vencislav Valchev

2017-11-01

Full Text Available The article presents a comparison of advantages and disadvantages of a battery charger circuit with and without the use of DC-link capacitors in it. The specific application requirements, namely ultra-light electric vehicles, are set as lightness, efficiency and robustness of the design. Prove of greater reliability and improvement on maintenance costs without significant decrease in the quality of charging process with the removal of DC-link capacitors in rectifier and boost converter circuits is accomplished. The proposed circuit parameters are analyzed by carried out simulations.

RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

KAUST Repository

Elshurafa, Amro M.

2012-07-23

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.

A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors

Science.gov (United States)

Liu, Donhang

2014-01-01

The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The

Compensación de potencia reactiva mediante bancos asimétricos de capacitores; Reactive Power Compensation by Unbalanced Capacitor Banks

Directory of Open Access Journals (Sweden)

Ignacio Pérez Abril

2011-02-01

Full Text Available A pesar de que los sistemas de distribución primaria y secundaria son desbalanceados por naturaleza, lacompensación de potencia reactiva en estos sistemas, se realiza comúnmente mediante bancos decondensadores trifásicos balanceados. En este trabajo se presenta la formulación general para el problemade compensación de potencia reactiva en sistemas desbalanceados mediante bancos de condensadoresdesbalanceados. Se presentan cuatro ejemplos de compensación en el secundario de bancos desbalanceadosde transformadores monofásicos. Todos los ejemplos muestran que la compensación por bancosdesbalanceados de capacitores incrementa los beneficios con respecto al uso de bancos balanceados  In spite of the fact that primary and secondary distribution systems are unbalanced by nature, thereactive power compensation on these systems is commonly developed by the use of balanced capacitorbanks. In this paper, the general formulation for the reactive power compensation problem onunbalanced systems with unbalanced capacitor banks is developed. Four examples of reactive powercompensation on the secondary of unbalanced three-phase transformers banks are presented. All theexamples show that the compensation by unbalanced capacitor banks increases the active power lossessaving as well as reduce the transformer’s load and contributes to balance the line currents when the loadis unbalanced.

DC-Voltage Fluctuation Elimination Through a DC-Capacitor Current Control for DFIG Converters Under Unbalanced Grid Voltage Conditions

DEFF Research Database (Denmark)

Liu, Changjin; Xu, Dehong; Zhu, Nan

2013-01-01

Unbalanced grid voltage causes a large second-order harmonic current in the dc-link capacitors as well as dc-voltage fluctuation, which potentially will degrade the lifespan and reliability of the capacitors in voltage source converters. This paper proposes a novel dc-capacitor current control...... method for a grid-side converter (GSC) to eliminate the negative impact of unbalanced grid voltage on the dc-capacitors. In this method, a dc-capacitor current control loop, where a negative-sequence resonant controller is used to increase the loop gain, is added to the conventional GSC current control...... loop. The rejection capability to the unbalanced grid voltage and the stability of the proposed control system are discussed. The second-order harmonic current in the dc capacitor as well as dc-voltage fluctuation is very well eliminated. Hence, the dc capacitors will be more reliable under unbalanced...

Guidelines for Selection, Screening and Qualification of Low-Voltage Commercial Multilayer Ceramic Capacitors for Space Programs

Science.gov (United States)

Teverovsky, Alexander A.

2012-01-01

This document has been developed in the course of NASA Electronic Parts and Packaging (NEPP) program and is not an official endorsement of the insertion of commercial capacitors in space programs or an established set of requirements for their testing. The purpose of this document is to suggest possible ways for selection, screening, and qualification of commercial capacitors for NASA projects and open discussions in the parts engineering community related to the use of COTS ceramic capacitors. This guideline is applicable to commercial surface mount chip, simple parallel plate design, multi-layer ceramic capacitors (MLCCs) rated to voltages of 100V and less. Parts with different design, e.g. low inductance ceramic capacitors (LICA), land grid array (LGA) etc., might need additional testing and tailoring of the requirements described in this document. Although the focus of this document is on commercial MLCCs, many procedures discussed below would be beneficial for military-grade capacitors

Integrated hybrid switched-capacitor converter for LED drivers in 180 nm CMOS

NARCIS (Netherlands)

Castellanos Rodriguez, J.; Delos, J.; Hendrix, M.A.M.; Van Roermund, A.; Cantatore, E.

2016-01-01

This paper presents a LED driver based on a new Hybrid-Switched Capacitor Converter (H-SCC) operating in the MHz range, which uses the internal pulsed nodes of a Dickson converter and an LC output network to provide output current dimming. The converter is implemented using 5V integrated capacitors

Characteristics of a non-volatile liquid propellant in liquid-fed ablative pulsed plasma thrusters

Science.gov (United States)

Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

2017-02-01

In the past several decades, the use of electric propulsion in spacecraft has experienced tremendous growth. With the increasing adoption of small satellites in the kilogram range, suitable propulsion systems will be necessary in the near future. Pulsed plasma thrusters (PPTs) were the first form of electric propulsion to be deployed in orbit, and are highly suitable for small satellites due to their inherent simplicity. However, their lifetime is limited by disadvantages such as carbon deposition leading to thruster failure, and complicated feeding systems required due to the conventional use of solid propellants (usually polytetrafluoroethylene (PTFE)). A promising alternative to solid propellants has recently emerged in the form of non-volatile liquids that are stable in vacuum. This study presents a broad comparison of the non-volatile liquid perfluoropolyether (PFPE) and solid PTFE as propellants on a PPT with a common design base. We show that liquid PFPE can be successfully used as a propellant, and exhibits similar plasma discharge properties to conventional solid PTFE, but with a mass bit that is an order of magnitude higher for an identical ablation area. We also demonstrate that the liquid PFPE propellant has exceptional resistance to carbon deposition, completely negating one of the major causes of thruster failure, while solid PTFE exhibited considerable carbon build-up. Energy dispersive X-ray spectroscopy was used to examine the elemental compositions of the surface deposition on the electrodes and the ablation area of the propellant (or PFPE encapsulator). The results show that based on its physical characteristics and behavior, non-volatile liquid PFPE is an extremely promising propellant for use in PPTs, with an extensive scope available for future research and development.

Design and fabrication of a continuously tuned capacitor by microfluidic actuation

Science.gov (United States)

Habbachi, Nizar; Boussetta, Hatem; Boukabache, Ali; Adel Kallala, Mohamed; Pons, Patrick; Besbes, Kamel

2018-03-01

This paper presents the design and fabrication of a continuously tunable RF MEMS capacitor using micro fluidics as a tuning parameter. The impedance variation principle is based on the modification of the capacitor gap permittivity produced by the presence of deionized (DI) water and its displacement in a channel inserted between electrodes. In addition, the electric field distribution changes in an equiponderant way according to the DI water positions in the channel. This change modifies the capacitive coupling, the stored energy and, consequently, the self-resonant frequency. The fabrication process is based on two parts: metallic paths having a spiral form, and obtained by electroplating a 7 µm thick gold layer to constitute electrodes; and fluidic channels, realized by super imposing two SU-8 films. The measurements show a nonlinear variation of the capacitor value according to the water positions. The tuning range is very large, reaching to 4650% for capacitance, and 335% for resonant frequency. However, the quality factor reaches Q max  =  79 at 550 MHz if the capacitor is empty and decreases with the fluid displacement to Q min  =  3.13.

Fringe Capacitance of a Parallel-Plate Capacitor.

Science.gov (United States)

Hale, D. P.

1978-01-01

Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

Modeling and fabrication of an RF MEMS variable capacitor with a fractal geometry

KAUST Repository

Elshurafa, Amro M.; Ho, P.H.; Salama, Khaled N.

2013-01-01

capacitor is increasing the tuning range of the variable capacitor beyond the typical ratio of 1.5. The modeling was carried out using the commercially available finite element software COMSOL to predict both the tuning range and pull-in voltage. Measurement

The influence of capacitor banks on transformer load current

Directory of Open Access Journals (Sweden)

Jović Aleksandar S.

2017-01-01

Full Text Available This paper deals with the influence of capacitor banks used for reactive energy compensation on total load current of 10/0,4 kV/kV distribution transformers. The analysis regards distribution area of Leskovac which comprehends town Leskovac and nearby settlements. Differently from previously published references that treat excessively reactive energy consumption, the value of reactive power on low voltage side of transformer taking into account the presence of capacitor banks is observed primarily in this paper. Both theoretically possible cases are restated on the basis of measurements: the compensation is adequate or inadequate. The cases of insufficient compensation and overcompensation are regarded to be inadequate compensation. The adequate compensation is achieved when reactive power oscillates around 0 kvar. The special case of adequate compensation, called conditionally adequate compensation, is introduced. For all four cases that describe reactive energy compensation, the calculation results of relative change of low voltage transformer current in the presence of capacitor banks, in comparison to the current without installed banks are presented.

Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2003-07-01

Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

International Nuclear Information System (INIS)

Zhou Jiahui; Xu Wenjun; Li Qi; Li Simin; He Zhiyi; Li Haiou; Chang Hudong; Liu Honggang; Liu Guiming

2015-01-01

The impact of various thicknesses of Al 2 O 3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al 2 O 3 , the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm 2 and acceptable voltage coefficients of capacitance of 681 ppm/V 2 at 1 MHz. An outstanding VCC-α of 74 ppm/V 2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al 2 O 3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al 2 O 3 could be very promising candidates for GaAs RFIC applications. (paper)

A General Reliability Model for Ni-BaTiO3-Based Multilayer Ceramic Capacitors

Science.gov (United States)

Liu, Donhang

2014-01-01

The evaluation of multilayer ceramic capacitors (MLCCs) with Ni electrode and BaTiO3 dielectric material for potential space project applications requires an in-depth understanding of their reliability. A general reliability model for Ni-BaTiO3 MLCC is developed and discussed. The model consists of three parts: a statistical distribution; an acceleration function that describes how a capacitor's reliability life responds to the external stresses, and an empirical function that defines contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size, and capacitor chip size A. Application examples are also discussed based on the proposed reliability model for Ni-BaTiO3 MLCCs.

Overview of radiation effects on emerging non-volatile memory technologies

Directory of Open Access Journals (Sweden)

Fetahović Irfan S.

2017-01-01

Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

Harmonic Resonance in Power Transmission Systems due to the Addition of Shunt Capacitors

Science.gov (United States)

Patil, Hardik U.

Shunt capacitors are often added in transmission networks at suitable locations to improve the voltage profile. In this thesis, the transmission system in Arizona is considered as a test bed. Many shunt capacitors already exist in the Arizona transmission system and more are planned to be added. Addition of these shunt capacitors may create resonance conditions in response to harmonic voltages and currents. Such resonance, if it occurs, may create problematic issues in the system. It is main objective of this thesis to identify potential problematic effects that could occur after placing new shunt capacitors at selected buses in the Arizona network. Part of the objective is to create a systematic plan for avoidance of resonance issues. For this study, a method of capacitance scan is proposed. The bus admittance matrix is used as a model of the networked transmission system. The calculations on the admittance matrix were done using Matlab. The test bed is the actual transmission system in Arizona; however, for proprietary reasons, bus names are masked in the thesis copy intended for the public domain. The admittance matrix was obtained from data using the PowerWorld Simulator after equivalencing the 2016 summer peak load (planning case). The full Western Electricity Coordinating Council (WECC) system data were used. The equivalencing procedure retains only the Arizona portion of the WECC. The capacitor scan results for single capacitor placement and multiple capacitor placement cases are presented. Problematic cases are identified in the form of 'forbidden response. The harmonic voltage impact of known sources of harmonics, mainly large scale HVDC sources, is also presented. Specific key results for the study indicated include: (1) The forbidden zones obtained as per the IEEE 519 standard indicates the bus 10 to be the most problematic bus. (2) The forbidden zones also indicate that switching values for the switched shunt capacitor (if used) at bus 3 should be

Characterization of micro-resonator based on enhanced metal insulator semiconductor capacitor for glucose recognition.

Science.gov (United States)

Dhakal, Rajendra; Kim, E S; Jo, Yong-Hwa; Kim, Sung-Soo; Kim, Nam-Young

2017-03-01

We present a concept for the characterization of micro-fabricated based resonator incorporating air-bridge metal-insulator-semiconductor (MIS) capacitor to continuously monitor an individual's state of glucose levels based on frequency variation. The investigation revealed that, the micro-resonator based on MIS capacitor holds considerable promise for implementation and recognition as a glucose sensor for human serum. The discrepancy in complex permittivity as a result of enhanced capacitor was achieved for the detection and determination of random glucose concentration levels using a unique variation of capacitor that indeed results in an adequate variation of the resonance frequency. Moreover, the design and development of micro-resonator with enhanced MIS capacitor generate a resolution of 112.38 × 10 -3 pF/mg/dl, minimum detectable glucose level of 7.45mg/dl, and a limit of quantification of 22.58mg/dl. Additionally, this unique approach offers long-term reliability for mediator-free glucose sensing with a relative standard deviation of less than 0.5%. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

Reliability Modeling Development and Its Applications for Ceramic Capacitors with Base-Metal Electrodes (BMEs)

Science.gov (United States)

Liu, Donhang

2014-01-01

This presentation includes a summary of NEPP-funded deliverables for the Base-Metal Electrodes (BMEs) capacitor task, development of a general reliability model for BME capacitors, and a summary and future work.

A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

Science.gov (United States)

Teverovsky, Alexander

2017-01-01

Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

Contribution to dimensioning a pack of super-capacitors for 12/42 V application

Energy Technology Data Exchange (ETDEWEB)

Rafik, F.; Karmous, M. [Ecole d' Ingenieurs de l' Arc Jurassien, CH (Switzerland); Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, 90 - Belfort (France); Gallay, R. [Maxwell Technologies, CH (Switzerland)

2004-07-01

Increase power demands on automotive are making current 12/14 V electrical systems inadequate. The total power demand will triple in some cars from 800 W today to an average of 2500 W and into kW range for peak demand in the future. Super-capacitor can be used for energy storage and for peak power requirement in order to increase the efficiency and the life cycle of the system. However, the sizing of energy storage with super-capacitors is very important for embedded applications, because of the weight and the volume of the system. This paper presents a sizing method of a pack of super-capacitors. The proposed method is based on the power and energy demand. In order to validate this method, a model of the Maxwell cell BCAP0010 of super-capacitors is presented and implemented in the SIMPLORER software. (authors)

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

Transparent capacitors with hybrid ZnO:Al and Ag nanowires as electrodes

International Nuclear Information System (INIS)

Zhang, Guozhen; Wu, Hao; Wang, Xiao; Wang, Ti; Liu, Chang

2016-01-01

Transparent conducting films with a composite structure of AlZnO–Ag nanowires (AgNWs) have been prepared by atomic layer deposition. The sheet resistance was reduced from 120 to 9 Ω when the AgNW networks were involved. Transparent capacitors with Al_2O_3–TiO_2–Al_2O_3 dielectrics were fabricated on the composite electrodes and demonstrated a capacitance density of 10.1 fF μm"−"2, which was significantly higher than that of capacitors with AlZnO electrodes (8.8 fF μm"−"1). The capacitance density remained almost unchanged in a broad frequency range from 3 kHz to 1 MHz. Moreover, a low leakage current density of 2.4 × 10"−"7 A cm"−"2 at 1 V was achieved. Transparent and flexible capacitors were also fabricated using the composite electrodes, and demonstrated an improved bendability. The transparent capacitors showed an average optical transmittance over 70% in the visible range, and thus open the door to practical applications in transparent integrated circuits. (paper)

Charge and Energy Stored in a Capacitor

Science.gov (United States)

Kraftmakher, Yaakov

2012-01-01

Using a data-acquisition system, the charge and energy stored in a capacitor are measured and displayed during the charging/discharging process. The experiment is usable as a laboratory work and/or a lecture demonstration. (Contains 3 figures.)

Energy-Storing Structures: Composite Capacitors and Batteries

Science.gov (United States)

2012-07-30

circuit board (PCB) prepreg C electrode dielectric Autoclave-processed structural capacitor • Objective: High energy density, scalable...Continued scaling (lab safety limit  100 J) – Beyond commercial FR4 prepreg  high dielectric additives, super- clean prepregging

Capacitor Monitoring for Modular Multilevel Converters

DEFF Research Database (Denmark)

Deng, Fujin; Liu, Dong; Wang, Yanbo

2017-01-01

). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of the MMC. This paper proposed an effective monitoring method for the capacitance in each SM of the MMC. The proposed method reveals the relationship between the arm average capacitance and the capacitance...

Study on the KM capacitor base thermometers in the 42-273 K range

International Nuclear Information System (INIS)

Luzganov, V.S.; Mats'ko, A.A.

1988-01-01

Thermometric characteristics of the KM-5a-HZ0 monolithic capacitors in the 42-273 K temperature range are studied. Capacitors capacitance - temperature relation is considered in details. The data reproducibility after 5, 23, 34, 50, 51 and 57 days is studied, the accuracy of temperature measurements by the given thermometers is determined. Recommendations on selection of cpacitors, suitable for application as thermometer, are given. These capacitors permit temperature measurement in the 42-225 K range with the error of ± 0.5 K, and above 225 K the error is ± 1K. 8 refs.; 1 fig.; 1 tab

Simulation evaluation of capacitor bank impact on increasing supply current for alumunium production

Science.gov (United States)

Hasan, S.; Badra, K.; Dinzi, R.; Suherman

2018-03-01

DC current supply to power the electrolysis process in producing aluminium at PT Indonesia Asahan Aluminium (Persero) is about 193 kA. At this condition, the load voltage regulator (LVR) transformer generates 0.89 lagging power factor. By adding the capacitor bank to reduce the harmonic distortion, it is expected that the supply current will increase. This paper evaluates capacitor bank installation impact on the system by using ETAP 12.0 simulation. It has been obtained that by installing 90 MVAR capacitor bank in the secondary part of LVR, the power factor is corrected about 8% and DC current increases about 13.5%.

Composite magnetorheological elastomers as dielectrics for plane capacitors: Effects of magnetic field intensity

Directory of Open Access Journals (Sweden)

Maria Balasoiu

Full Text Available The fabrication of composite magnetorheological elastomers (MRECs based on silicone rubber, carbonyl iron microparticles (10% vol. and polyurethane elastomer doped with 0%, 10% and 20% volume concentration TiO2 microparticles is presented. The obtained MRECs have the shape of thin foils and are used as dielectric materials for manufacturing plane capacitors. Using the plane capacitor method and expression of capacitance as a function of magnetic field intensity, combined with linear elasticity theory, the static magnetoelastic model of the composite is obtained and analyzed. Keywords: Magnetorheological elastomer, TiO2 microparticles, Silicone rubber, Carbonyl iron, Plane capacitor, Magnetoelasticity

Digital Control of a power conditioner for fuel cell/super-capacitor hybrid system

DEFF Research Database (Denmark)

Caballero, Juan C Trujillo; Gomis-Bellmunt, Oriol; Montesinos-Miracle, Daniel

2014-01-01

This article proposes a digital control scheme to operate a proton exchange membrane fuel cell module of 1.2 kW and a super-capacitor through a DC/DC hybrid converter. A fuel cell has been proposed as a primary source of energy, and a super-capacitor has been proposed as an auxiliary source...... of energy. Experimental validation of the system implemented in the laboratory is provided. Several tests have been performed to verify that the system achieves excellent output voltage (V0) regulation and super-capacitor voltage (V SC) control under disturbances from fuel cell power (PFC) and output power...

Carbon-Based Fibrous EDLC Capacitors and Supercapacitors

Directory of Open Access Journals (Sweden)

C. Lekakou

2011-01-01

Full Text Available This paper investigates electrochemical double-layer capacitors (EDLCs including two alternative types of carbon-based fibrous electrodes, a carbon fibre woven fabric (CWF and a multiwall carbon nanotube (CNT electrode, as well as hybrid CWF-CNT electrodes. Two types of separator membranes were also considered. An organic gel electrolyte PEO-LiCIO4-EC-THF was used to maintain a high working voltage. The capacitor cells were tested in cyclic voltammetry, charge-discharge, and impedance tests. The best separator was a glass fibre-fine pore filter. The carbon woven fabric electrode and the corresponding supercapacitor exhibited superior performance per unit area, whereas the multiwall carbon nanotube electrode and corresponding supercapacitor demonstrated excellent specific properties. The hybrid CWF-CNT electrodes did not show a combined improved performance due to the lack of carbon nanotube penetration into the carbon fibre fabric.

Release and nonvolatile operation of carbon nanotube nanorelay by resonant vibration

Energy Technology Data Exchange (ETDEWEB)

Kagota, Tatsuya; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji, E-mail: akita@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Nagataki, Atsuko [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Materials Analysis Research Center, KRI, Inc., Osaka 554-0051 (Japan)

2013-11-11

We investigated the release of a stuck carbon nanotube (CNT) cantilever beam in nanorelay applications using a nano-manipulator. Even with strong adhesion induced by electrostatic attraction that is 100 times stronger than the van der Waals interaction, successful release of a nanotube arm from a stuck state was realized by the application of a resonant vibration to the stuck CNT arm. Furthermore, nonvolatile operation of the nanotube nanorelay was demonstrated by the application of the resonant vibration to the stuck CNT arm.

GUARANTEEING THE TROUBLE-FREE OPERATION OF CAPACITOR BANKS IN POWER-SUPPLY SYSTEMS OF INDUSTRIAL ENTERPRISES

Directory of Open Access Journals (Sweden)

D.A. Gapon

2016-03-01

Full Text Available Purpose. The problem of resonance phenomena in power systems of industrial enterprises using capacitor banks for reactive power compensation was detected. Circuit of the capacitor banks tier to downshift main substation tires is present. But there is no common algorithm to calculate and avoid such trouble. The main goal of this article is to introduce some basics for power supply systems with possible resonant circuits engineering. Methodology. At the first step the data on the change of the current in the chemical company network when changing capacitor banks value are received. For these purposes the oscilloscope function of digital protection relay was used. Current data samples were analyzed by spectrum detection software. Most significant levels of the 3rd and 5th harmonics were achieved. Comparison of harmonic distortion levels with and without capacitor bank is given. Results. Achieved data allow making conclusion about overloading reasons of capacitor banks while higher harmonics currents presence. A voltage and current harmonious composition measuring in the absence of power quality analyzers using digital protection relay terminals or emergencies registers are proposed. The necessity of power quality monitoring near capacitor banks connections to avoid resonance phenomena (current and voltage resonance in industrial power supply systems is proven. The control algorithm of capacitor banks to provide electromagnetic compatibility, while various modes of nonlinear load operation is given. Originality. Using of digital protection relay oscilloscoping for current resonant detection can allow to significally reduce time and cost of solution. Replacement parallel circuit comprising a branch and one active-inductive load to another branch network in the presence of higher harmonics source are proposed. Practical value. A sequence for measuring the levels of harmonic components at the connections of capacitor banks in the absence of specialized

Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

Directory of Open Access Journals (Sweden)

Krystyna Przybył

2011-01-01

Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

KAUST Repository

Elshurafa, Amro M.; Salama, Khaled N.

2012-01-01

In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single

Lithium-ion storage capacitors achieved by CVD graphene/TaC/Ta-wires and carbon hollow spheres

International Nuclear Information System (INIS)

Zhao, Liwei; Li, Hongji; Li, Mingji; Xu, Sheng; Li, Cuiping; Qu, Changqing; Zhang, Lijun; Yang, Baohe

2016-01-01

Highlights: • Graphene/TaC/Ta wire electrode was prepared by CVD. • Carbon hollow spheres as a solid electrolyte were prepared by hydrothermal. • Specific capacitance of assembled capacitor reached 593 F g −1 at 10 A g −1 . • The capacitor provided high energy and power densities (132 W h kg −1 /3.17 kW kg −1 ). • The hybrid capacitor also exhibited a high stability during long endurance tests. - Abstract: Lithium-ion storage capacitors were assembled using graphene/tantalum carbide/tantalum wire electrodes and carbon hollow spheres as electrolyte. The graphene/tantalum carbide layers were prepared by electron-assisted hot filament chemical vapor deposition; the carbon hollow spheres were synthesized by hydrothermal reaction and pyrolysis treatment. The specific capacitance of the capacitor was 593 F g −1 at a current density of 10 A g −1 . The capacitor showed excellent cycling stability, retaining 91.2% of its initial capacitance after 8000 cycles. Moreover, the capacitor provided a high specific energy density of 132 W h kg −1 at a high power density of 3.17 kW kg −1 . The high energy density is attributed to the widened operation window ranging from 0 to 3.0 V. The graphene layer of the electrode and carbon hollow spheres in electrolyte synergistic affect influence on the electrochemical performance of the capacitor are discussed. In addition, the use of a low-cost lithium salt, lithium chloride, is also featured in this paper.

Prognostic Techniques for Capacitor Degradation and Health Monitoring

Data.gov (United States)

National Aeronautics and Space Administration — This paper discusses our initial efforts in constructing physics of failure models for electrolytic capacitors subjected to electrical stressors in DC-DC power...

WORKSHOP REPORT - CONSIDERATIONS FOR DEVELOPING LEACHING TEST METHODS FOR SEMI- AND NON-VOLATILE ORGANIC COMPOUNDS

Science.gov (United States)

The report provides a summary of the information exchange at a workshop on the potential for release of semi- or non-volatile organic constituents at contaminated sites where sub-surface treatment has been used to control migration, and from waste that is disposed or re-used. The...

Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

International Nuclear Information System (INIS)

Divani, Nazila; Firoozabadi, Mohammad M.; Bayat, Esmail

2014-01-01

Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors

Ultra-capacitors in power conversion systems analysis, modeling and design in theory and practice

CERN Document Server

Grbovic, Petar J

2014-01-01

Divided into five parts, this book is focused on ultra-capacitors and their applications in power conversion systems. It discusses ultra-capacitor analysis, modelling and module design from a macroscopic (application) perspective. It also describes power conversion applications, interface dc-dc converter design and entire conversion system design. Part One covers the background of energy storage technologies, with particular attention on state-of-the-art ultra-capacitor energy storage technologies. In Chapter four of this part, power conversion systems with integrated energy storage is discus

Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM

International Nuclear Information System (INIS)

Jia Ze; Ren Tianling; Liu Tianzhi; Hu Hong; Zhang Zhigang; Xie Dan; Liu Litian

2007-01-01

Oxidization for Ru through anneal with plenteous oxygen atmosphere and its application as the top electrode of sol-gel PZT capacitor are investigated in this study. PZT capacitor with RuO 2 or oxygen-doped Ru as top electrode can be obtained from Ru/PZT/Pt capacitor through slow-rate anneal at 650 deg. C for 20 min in cannulation furnace. It has larger remanent polarization, better rectangle shape, better fatigue properties and lower leakage current than the other capacitors with PZT film prepared by the same process and different top electrodes in this study. Plenteous oxygen atmosphere and 650 deg. C in cannulation furnace are important conditions for the oxidation of Ru and renewed crystallization of PZT in this capacitor. Plenteous oxygen at interface can compensate the oxygen vacancies at PZT/electrode interface, which results in the above good characteristics

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

KAUST Repository

Wang, Jer-Chyi

2016-11-23

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

International Nuclear Information System (INIS)

Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

2015-01-01

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

Discontinuous Galerkin Time-Domain Analysis of Power-Ground Planes Taking Into Account Decoupling Capacitors

KAUST Repository

Li, Ping; Jiang, Li Jun; Bagci, Hakan

2017-01-01

In this paper, a discontinuous Galerkin time-domain (DGTD) method is developed to analyze the power-ground planes taking into account the decoupling capacitors. In the presence of decoupling capacitors, the whole physical system can be split

Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

Energy Technology Data Exchange (ETDEWEB)

Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

2014-02-15

In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

Graphene oxide-based flexible metal–insulator–metal capacitors

International Nuclear Information System (INIS)

Bag, A; Hota, M K; Mallik, S; Maiti, C K

2013-01-01

This work explores the fabrication of graphene oxide (GO)-based metal–insulator–metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ∼4 fF µm −2 measured at 1 MHz and permittivity of ∼6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending. (paper)

Identifying dielectric and resistive electrode losses in high-density capacitors at radio frequencies

NARCIS (Netherlands)

Tiggelman, M.P.J.; Reimann, K.; Liu, J.; Klee, M.; Keur, W.; Mauczock, R.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

2008-01-01

A regression-based technique is presented which distinguishes the dielectric loss from the resistive loss of high density planar capacitors in a very wide bandwidth of 0.1–8 GHz. Moreover, the procedure yields useful results if the capacitor deviates from a lumped element model and indicates when

The impact of switching capacitor banks with very high inrush current on switchgear

NARCIS (Netherlands)

Smeets, R.P.P.; Wiggers, R.; Bannink, H.; Kuivenhoven, S.; Chakraborty, S.; Sandolache, G.

2012-01-01

Capacitor banks are installed in an increasing number in order to control power quality issues in the transmission and distribution networks. Due to load fluctuation, switching of capacitor banks is normally a daily operation. Although the current to be switched (e.g. the normal load current) is far

Effect of electronic spatial extents (ESE) of ions on overpotential of lithium ion capacitors

International Nuclear Information System (INIS)

Xu, Fan; Lee, Chung ho; Koo, Chong Min; Jung, Cheolsoo

2014-01-01

Highlights: •Electronic spatial extent (ESE) of ion characterizes its electron density volume. •The ESE of ion proposes to assess overpotential of nanoporous capacitor. •Anion with low ESE shows low overpotential of the capacitor. •The ESE is more realistic to assess overpotential than conductivity or ion size. -- Abstract: The electronic spatial extent (ESE) of ions was defined as a major concept for assessing the cause of overpotential in the charging and discharging processes of a nanoporous activated carbon (AC) electrode. The performance degradation of AC/Li half-cells was caused by the overpotential, which was in discord with the electrolyte conductivity and ion size. Compared to the overpotential with the salt concentration, the AC/Li half-cell with a high concentration had a smaller overpotential, and its discharge patterns were similar to the curves obtained from the half-cells with a smaller ESE of BF 4 − ion. The ESE is a more realistic solution for determining the overpotential of the nanoporous capacitor, such as supercapacitor and Li ion capacitor, because its capacity is dependent on the electron density at the electric double layer of the capacitor electrode

Performance of AC/graphite capacitors at high weight ratios of AC/graphite

Energy Technology Data Exchange (ETDEWEB)

Wang, Hongyu [IM and T Ltd., Advanced Research Center, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan); Yoshio, Masaki [Advanced Research Center, Department of Applied Chemistry, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan)

2008-03-01

The effect of negative to positive electrode materials' weight ratio on the electrochemical performance of both activated carbon (AC)/AC and AC/graphite capacitors has been investigated, especially in the terms of capacity and cycle-ability. The limited capacity charge mode has been proposed to improve the cycle performance of AC/graphite capacitors at high weight ratios of AC/graphite. (author)

Chemical modification of graphene aerogels for electrochemical capacitor applications.

Science.gov (United States)

Hong, Jin-Yong; Wie, Jeong Jae; Xu, Yu; Park, Ho Seok

2015-12-14

Graphene aerogel is a relatively new type of aerogel that is ideal for energy storage applications because of its large surface area, high electrical conductivity and good chemical stability. Also, three dimensional interconnected macropores offer many advantages such as low density, fast ion and mass transfer, and easy access to storage sites. Such features allow graphene aerogels to be intensively applied for electrochemical capacitor applications. Despite the growing interest in graphene aerogel-based electrochemical capacitors, however, the graphene aerogels still suffer from their low capacitive performances and high fragility. Both relatively low capacitance and brittleness of physically crosslinked graphene aerogels remain a critical challenge. Until now, a number of alternative attempts have been devoted to overcome these shortcomings. In this perspective, we summarize the recent research progress towards the development of advanced graphene aerogel-based electrochemical capacitors according to the different approaches (e.g. porosity, composition and structure controls). Then, the recently proposed chemical strategies to improve the capacitive performances and mechanical durability of graphene aerogels for practical applications are highlighted. Finally, the current challenges and perspectives in this emerging material are also discussed.

Electric converters of electromagnetic strike machine with capacitor supply

Science.gov (United States)

Usanov, K. M.; Volgin, A. V.; Kargin, V. A.; Moiseev, A. P.; Chetverikov, E. A.

2018-03-01

The application of pulse linear electromagnetic engines in small power strike machines (energy impact is 0.01...1.0 kJ), where the characteristic mode of rare beats (pulse seismic vibrator, the arch crash device bins bulk materials), is quite effective. At the same time, the technical and economic performance of such machines is largely determined by the ability of the power source to provide a large instantaneous power of the supply pulses in the winding of the linear electromagnetic motor. The use of intermediate energy storage devices in power systems of rare-shock LEME makes it possible to obtain easily large instantaneous powers, forced energy conversion, and increase the performance of the machine. A capacitor power supply of a pulsed source of seismic waves is proposed for the exploration of shallow depths. The sections of the capacitor storage (CS) are connected to the winding of the linear electromagnetic motor by thyristor dischargers, the sequence of activation of which is determined by the control device. The charge of the capacitors to the required voltage is made directly from the battery source, or through the converter from a battery source with a smaller number of batteries.

Voltage ripple compensation for grid connected electrolyser power supply using small DC link capacitor

DEFF Research Database (Denmark)

Török, Lajos; Mathe, Laszlo; Munk-Nielsen, Stig

2014-01-01

The purpose of this work was to investigate a three-phase-grid connected power supply using small DC link capacitor for electrolyser application. The hydrogen generation system requires low voltage and high current power supply. Thus the structure of the 3-phase power supply is defined as follows......: a three phase rectification, a small DC-link capacitor and a phase-shifted full-bridge converter with current doubler rectification. Design constraints and control problems are investigated. The advantages and problems caused by the use of small DC link capacitor are presented. The control of the system...

Effects of Radiation on Capacitor Dielectrics

Science.gov (United States)

Bouquet, F. L.; Somoano, R. B.; Frickland, P. O.

1987-01-01

Data gathered on key design parameters. Report discusses study of electrical and mechanical properties of irradiated polymer dielectric materials. Data compiled for use by designers of high-energy-density capacitors that operate in presence of ionizing radiation. Study focused on polycarbonates, polyetheretherketones, polymethylpentenes, polyimides (including polyetherimide), polyolefins, polysulfones (including polyethersulfone and polyphenylsulfone), and polyvinylidene fluorides.

The possibility of giant dielectric materials for multilayer ceramic capacitors.

Science.gov (United States)

Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

2013-02-11

There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

Evaluation of high temperature capacitor dielectrics

Science.gov (United States)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

A fast 30 kV 5 kHz repetition rate resonant capacitor charger

NARCIS (Netherlands)

Beckers, F.J.C.M.; Huiskamp, T.; van Heesch, E.J.M.; Pemen, A.J.M.

2016-01-01

A novel circuit topology of a fast 30 kV resonant capacitor charger is presented in this paper. The charger is designed for high repetition rate spark gap based pulsed power modulators. A spark gap can fire spontaneously (pre-firing) during charging of a capacitor bank due to poor dielectric

Feasibility Study to Evaluate Candidate Materials of Nanofilled Block Copolymers for Use in Ultra High Density Pulsed Power Capacitors

Science.gov (United States)

2015-10-26

capacitor films showing the first-ever application of self-assembling BCPs as the nanostructured dielectric media in electrostatic capacitors . Using... dielectric media in electrostatic capacitors . Using controlled ordering of lamellae- forming BCPs via our cold zone annealing soft-shear (CZA-SS...fast energy storage and discharge capabilities. However, the energy storage density of these capacitors is limited by the dielectric properties of

A graphene-based non-volatile memory

Science.gov (United States)

Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

2015-09-01

We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

The Impact of Grid Unbalances on the Reliability of DC-link Capacitors in a Motor Drive

DEFF Research Database (Denmark)

Wang, Huai; Davari, Pooya; Kumar, Dinesh

2017-01-01

DC-link capacitor is one of the reliability-critical components in motor drive applications, which contributes to a considerable cost, size and failure. Its reliability performance depends on both inherent physical strength and external loading. The grid unbalances could alter the electro......-thermal stresses of key components in a motor drive. Therefore, this digest investigates the impact of grid voltage amplitude and phase unbalances on the lifetime of DC-link capacitors used in a standard three-phase motor drive. The theoretical stress models and experimental measurements of the capacitor voltages...... and ripple currents are presented. The relationship between the DC-link capacitor lifetime and the level of unbalances and loads are discussed based on a 7.5 kW motor drive system. The results serve as a guideline to size the DC-link capacitors to be robust enough at the presence of grid unbalance conditions....

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

Science.gov (United States)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Tube-Super Dielectric Materials: Electrostatic Capacitors with Energy Density Greater than 200 J·cm-3.

Science.gov (United States)

Cortes, Francisco Javier Quintero; Phillips, Jonathan

2015-09-17

The construction and performance of a second generation of super dielectric material based electrostatic capacitors (EC), with energy density greater than 200 J·cm - ³, which rival the best reported energy density of electric double layer capacitors (EDLC), also known as supercapacitors, are reported. The first generation super dielectric materials (SDM) are multi-material mixtures with dielectric constants greater than 1.0 × 10⁵, composed of a porous, electrically insulating powder filled with a polarizable, ion-containing liquid. Second-generation SDMs (TSDM), introduced here, are anodic titania nanotube arrays filled with concentrated aqueous salt solutions. Capacitors using TiO₂ based TSDM were found to have dielectric constants at ~0 Hz greater than 10⁷ in all cases, a maximum operating voltage of greater than 2 volts and remarkable energy density that surpasses the highest previously reported for EC capacitors by approximately one order of magnitude. A simple model based on the classic ponderable media model was shown to be largely consistent with data from nine EC type capacitors employing TSDM.

Tube-Super Dielectric Materials: Electrostatic Capacitors with Energy Density Greater than 200 J·cm−3

Directory of Open Access Journals (Sweden)

Francisco Javier Quintero Cortes

2015-09-01

Full Text Available The construction and performance of a second generation of super dielectric material based electrostatic capacitors (EC, with energy density greater than 200 J·cm−3, which rival the best reported energy density of electric double layer capacitors (EDLC, also known as supercapacitors, are reported. The first generation super dielectric materials (SDM are multi-material mixtures with dielectric constants greater than 1.0 × 105, composed of a porous, electrically insulating powder filled with a polarizable, ion-containing liquid. Second-generation SDMs (TSDM, introduced here, are anodic titania nanotube arrays filled with concentrated aqueous salt solutions. Capacitors using TiO2 based TSDM were found to have dielectric constants at ~0 Hz greater than 107 in all cases, a maximum operating voltage of greater than 2 volts and remarkable energy density that surpasses the highest previously reported for EC capacitors by approximately one order of magnitude. A simple model based on the classic ponderable media model was shown to be largely consistent with data from nine EC type capacitors employing TSDM.

Li-Ion, Ultra-capacitor Based Hybrid Energy Module

National Research Council Canada - National Science Library

Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

2007-01-01

Ultra-capacitors in multi kilo-farad ranges are now starting to be considered as alternatives or complimentary to batteries for products ranging from toys to hybrid vehicles as well as for space applications...

The Most Energy Efficient Way to Charge the Capacitor in an RC Circuit

Science.gov (United States)

Wang, Dake

2017-01-01

The voltage waveform that minimizes the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and…

Measurements of fuse and resistor characteristics for multi-megajoule capacitor bank application

International Nuclear Information System (INIS)

McDonald, K.F.; Smith, T.; Golden, J.; Conley, B.

1986-01-01

Experimental tests have been conducted on commercially available fuses and resistors under fast high voltage pulsed (10 μsec) conditions to determine their ability to protect capacitor bank components during faults. NRL's Modified Betatron Accelerator uses two multi-megajoule capacitor banks to power the toroidal and betatron magnetic field coils. The expensive high energy density capacitors in these banks must be protected from excessive peak current, voltage reversal, or charging beyond their electrical ratings in the occurrence of a fault. Adequate protection can be obtained with fuses and resistors in series with each parallel connected capacitor. The fuses must open reliably and hold off high voltage D.C. (10 - 20 kV), and the resistors must conduct high current and di/dt without failing from energy deposition or magnetic forces. The performance of the commercial fuses is well documented at low AC frequencies and currents (60 Hz/100 A) but data was not previously available for the fast high current pulsed conditions that prevail under actual fault conditions. A 20 kV 200 kJ, low inductance capacitor bank and ignitron switch were used to conduct the experiments. Peak currents in the fuses were approximately 170 kA at t - 6.5 μs. The final fuse hold-off voltage exceeded 8 kV. Currents in the resistors ranged from - 20 - 40 kA per resistor. The experimental results have been compared to the manufacturers data from minimum melt and maximum let-through and to exploding bridge wire computer models

A Comparison of Electrolytic Capacitors and Supercapacitors for Piezo-Based Energy Harvesting

Science.gov (United States)

2013-07-01

A Comparison of Electrolytic Capacitors and Supercapacitors for Piezo-Based Energy Harvesting by Matthew H. Ervin, Carlos M. Pereira, John R...Capacitors and Supercapacitors for Piezo-Based Energy Harvesting Matthew H. Ervin Sensors and Electronic Devices Directorate, ARL Carlos M. Pereira... Supercapacitors for Piezo-Based Energy Harvesting 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Matthew H

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

Science.gov (United States)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y.

2016-05-01

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Comparison of volatile and non-volatile metabolites in rice wine fermented by Koji inoculated with Saccharomycopsis fibuligera and Aspergillus oryzae.

Science.gov (United States)

Son, Eun Yeong; Lee, Sang Mi; Kim, Minjoo; Seo, Jeong-Ah; Kim, Young-Suk

2018-07-01

This study investigated volatile and nonvolatile metabolite profiles of makgeolli (a traditional rice wine in Korea) fermented by koji inoculated with Saccharomycopsis fibuligera and/or Aspergillus oryzae. The enzyme activities in koji were also examined to determine their effects on the formation of metabolites. The contents of all 18 amino acids detected were the highest in makgeolli fermented by S. fibuligera CN2601-09, and increased after combining with A. oryzae CN1102-08, unlike the contents of most fatty acids. On the other hand, major volatile metabolites were fusel alcohols, acetate esters, and ethyl esters. The contents of most fusel alcohols and acetate esters were the highest in makgeolli fermented by S. fibuligera CN2601-09, for which the protease activity was the highest, leading to the largest amounts of amino acods. The makgeolli samples fermented only by koji inoculated with S. fibuligera could be discriminated on PCA plots from the makgeolli samples fermented in combination with A. oryzae. In the case of nonvolatile metabolites, all amino acids and some metabolites such as xylose, 2-methylbenzoic acid, and oxalic acid contributed mainly to the characteristics of makgeolli fermented by koji inoculated with S. fibuligera and A. oryzae. These results showed that the formations of volatile and nonvolatile metabolites in makgeolli can be significantly affected by microbial strains with different enzyme activities in koji. To our knowledge, this study is the first report on the effects of S. fibuligera strains on the formation of volatile and non-volatile metabolites in rice wine, facilitating their use in brewing rice wine. Copyright © 2018. Published by Elsevier Ltd.

Expression of MEP Pathway Genes and Non-volatile Sequestration Are Associated with Circadian Rhythm of Dominant Terpenoids Emission in Osmanthus fragrans Lour. Flowers

Directory of Open Access Journals (Sweden)

Riru Zheng

2017-10-01

Full Text Available Osmanthus fragrans Lour. is one of the top 10 traditional ornamental flowers in China famous for its unique fragrance. Preliminary study proved that the terpenoids including ionone, linalool, and ocimene and their derivatives are the dominant aroma-active compounds that contribute greatly to the scent bouquet. Pollination observation implies the emission of aromatic terpenoids may follow a circadian rhythm. In this study, we investigated the variation of volatile terpenoids and its potential regulators. The results showed that both volatile and non-volatile terpenoids presented circadian oscillation with high emission or accumulation during the day and low emission or accumulation during the night. The volatile terpenoids always increased to reach their maximum values at 12:00 h, while free and glycosylated compounds continued increasing throughout the day. The depletion of non-volatile pool might provide the substrates for volatile emission at 0:00–6:00, suggesting the sequestration of non-volatile compounds acted like a buffer regulating emission of terpenoids. Further detection of MEP pathway genes demonstrated that their expressions increased significantly in parallel with the evident increase of both volatile and non-volatile terpenoids during the day, indicating that the gene expressions were also closely associated with terpenoid formation. Thus, the expression of MEP pathway genes and internal sequestration both played crucial roles in modulating circadian rhythm of terpenoid emission in O. fragrans.

Incorporation of distributed generation and shunt capacitor in radial distribution system for techno-economic benefits

Directory of Open Access Journals (Sweden)

Mukul Dixit

2017-04-01

The various costs such as purchase active power from grid, DG installation, capacitor installation, DG Operation and Maintenance (O&M are evaluated at two different load scenarios. In addition to that, technical and economical analyses are examined for various combinations of DGs and shunt capacitors. The proposed methodology is successfully demonstrated on 33-bus and 85-bus radial networks and the obtained numerical outcomes validate the suitability, importance and effectiveness to identify locations as well as sizes of DGs and shunt capacitors.

Protective systems and its protective switching elements on local failures of large slow-capacitor bank system

International Nuclear Information System (INIS)

Hasegawa, Mitsuo; Inoue, Kunikazu; Ueno, Isao.

1994-01-01

In various applications of pulsed power technologies, large capacitor bank systems are used to feed high current impulse to different experimental devices. The accidental electric breakdown in one of the capacitors in a parallel connection of the large bank may result in serious damages such as mechanical explosion and oil effusion or fire. In most fast banks, each unit capacitor has an output gap switch, which is expected to decouple the capacitors one another. However, no such special element is adopted usually in the slow bank system, partly because of the economical consideration. We have developed a novel and inexpensive protective element for these relatively slow capacitor banks, utilizing a concept of the enclosed type of the fast breakers. The principle of the operation of the protection elements is verified by a simulation experiment. Their practical effectiveness is also successfully demonstrated in the application to the system of the pulsed high magnetic field generator. (author)

High energy, low inductance, high current fiberglass energy storage capacitor for the Atlas Machine Marx modules

CERN Document Server

Cooper, R A; Ennis, J B; Cochrane, J C; Reass, W A; Parsons, W M

1999-01-01

The Los Alamos National Laboratory's Atlas Marx design team envisioned a double ended plastic case 60 kV, 15 nH, 650 kA, energy storage capacitor. A design specification was established and submitted to various vendors. Maxwell Energy Products drew from its development of large fiberglass case, high voltage, low inductance "FASTCAP" capacitors manufactured for Maxwell Technologies' ACE II, ACE III and ACE IV machines. This paper discusses the LANL specification and Maxwell Energy Products' successful design, Model No. 39232, 34.1 mu F, 60 kV, 13*29*27", the only capacitor qualified by LANL for the 23 Mega Joule Atlas application. Maxwell's past experience in this type of capacitor is covered. The performance data is reviewed and the life test data compared to the original calculated design life. Challenges included Maxwell's "keep it simple " design goal which was maintained to minimize the effort required to create and manufacture a nearly 600 pound capacitor. (1 refs).

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Science.gov (United States)

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Optimal Value of Series Capacitors for Uniform Field Distribution in Transmission Line MRI Coils

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy

2016-01-01

Transmission lines are often used as coils in high field magnetic resonance imaging (MRI). Due to the distributed nature of transmission lines, coils based on them produce inhomogeneous field. This work investigates application of series capacitors to improve field homogeneity along the coil....... The equations for optimal values of evenly distributed capacitors are derived and expressed in terms of the implemented transmission line parameters.The achieved magnetic field homogeneity is estimated under quasistatic approximation and compared to the regular transmission line resonator. Finally, a more...... practical case of a microstrip line coil with two series capacitors is considered....

Design of Neutral-Point Voltage Controller of a Three-level NPC Inverter with Small DC-Link Capacitors

DEFF Research Database (Denmark)

Maheshwari, Ram Krishan; Munk-Nielsen, Stig; Busquets-Monge, S.

2013-01-01

A Neutral-Point-Clamped (NPC) three-level inverter with small dc-link capacitors is presented in this paper. The inverter requires zero average neutral-point current for stable neutral-point voltage. The small dc-link capacitors may not maintain capacitor voltage balance, even with zero neutral......-point voltage control on the basis of the continuous model. The design method for optimum performance is discussed. The implementation of the proposed modulation strategy and the controller is very simple. The controller is implemented in a 7.5 kW induction machine based drive with only 14 ìF dc-link capacitors...

Joint NetWork Reconfiguration and Capacitor Placement by Bactrial Foraging Algorithm

Directory of Open Access Journals (Sweden)

Mohammad Ali Mohammadnia

2011-01-01

Full Text Available Power system engineers are forced to place more emphasis on reducing losses at the distribution level. From an economic perspective, Joint network reconfiguration and capacitor placement is one of the best ways to save energy. Application of heuristic technique is unavoidable, because of expansion of distribution networks and becoming more complex connections in these grids. In view of this, for the first this paper investigates the ability of Bacterial Foraging Algorithm (BFA for Joint network reconfiguration and capacitor placement.

Graphene hydrogels deposited in nickel foams for high-rate electrochemical capacitors.

Science.gov (United States)

Chen, Ji; Sheng, Kaixuan; Luo, Peihui; Li, Chun; Shi, Gaoquan

2012-08-28

Graphene hydrogel/nickel foam composite electrodes for high-rate electrochemical capacitors are produced by reduction of an aqueous dispersion of graphene oxide in a nickel foam (upper half of figure). The micropores of the hydrogel are exposed to the electrolyte so that ions can enter and form electrochemical double-layers. The nickel framework shortens the distances of charge transfer. Therefore, the electrochemical capacitor exhibits highrate performance (see plots). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Accelerated Aging Experiments for Capacitor Health Monitoring and Prognostics

Data.gov (United States)

National Aeronautics and Space Administration — This paper discusses experimental setups for health monitoring and prognostics of electrolytic capacitors under nominal operation and accelerated aging conditions....

The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

International Nuclear Information System (INIS)

McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.L.

1987-01-01

Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment

A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array

Science.gov (United States)

Jingjing, Wang; Zemin, Feng; Rongjin, Xu; Chixiao, Chen; Fan, Ye; Jun, Xu; Junyan, Ren

2016-05-01

A low power 9 bit 100 MS/s successive approximation register analog-to-digital converter (SAR ADC) with custom capacitor array is presented. A brand-new 3-D MOM unit capacitor is used as the basic capacitor cell of this capacitor array. The unit capacitor has a capacitance of 1 fF. Besides, the advanced capacitor array structure and switch mode decrease the power consumption a lot. To verify the effectiveness of this low power design, the 9 bit 100 MS/s SAR ADC is implemented in TSMC IP9M 65 nm LP CMOS technology. The measurement results demonstrate that this design achieves an effective number of bits (ENOB) of 7.4 bit, a signal-to-noise plus distortion ratio (SNDR) of 46.40 dB and a spurious-free dynamic range (SFDR) of 62.31 dB at 100 MS/s with 1 MHz input. The SAR ADC core occupies an area of 0.030 mm2 and consumes 0.43 mW under a supply voltage of 1.2 V. The figure of merit (FOM) of the SAR ADC achieves 23.75 fJ/conv. Project supported by the National High-Tech Research and Development Program of China (No. 2013AA014101).

Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

Science.gov (United States)

Juan, Trevor Pi-Chun; Lin, Cheng-Li; Shih, Wen-Chieh; Yang, Chin-Chieh; Lee, Joseph Ya-Min; Shye, Der-Chi; Lu, Jong-Hong

2009-03-01

Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb(Zr0.6,Ti0.4)O3 (PZT) ferroelectric layer and high-k lanthanum oxide (La2O3) insulator layer were fabricated. The outdiffusion of atoms between La2O3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ΔW ≈2dfEc≈0.8 V with higher annealing temperatures above 700 °C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600 °C-annealed samples. The C-V flatband voltage shift (ΔVFB) as a function of charge injection was characterized in this work. An energy band diagram of the Al/PZT//La2O3/p-Si system was proposed to explain the memory window and the flatband voltage shift.

Pulse Capacitors for Next Generation Linear Colliders. Final Report

International Nuclear Information System (INIS)

Hooker, M.W.

2000-01-01

During this Phase I SBIR research program, Nanomaterials Research Corporation (NRC) successfully demonstrated high-voltage multilayer capacitors produced from sub-100 nm ceramic powders. The devices produced by NRC exhibited properties that make them particularly useful for pulse power applications. These properties include (1) high capacitance (2) low loss (3) high breakdown voltage (4) high insulation resistance and (5) rapid discharge characteristics. Furthermore, the properties of the nanostructured capacitors were consistently found to exceed those of components that represent the state of the art within the industry. Encouraged by these results, NRC is planning to submit a Phase II proposal with the objective of securing seed capital to continue this development effort