WorldWideScience

Sample records for programmable nonvolatile capacitors

  1. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-04-24

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

  2. Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories

    International Nuclear Information System (INIS)

    Shannigrahi, S. R.; Jang, Hyun M.

    2001-01-01

    The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P r ) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 o C by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5 x 10 10 switching cycles, a quite stable charge retention profile with time, and comparatively high P r values, all of which assure their suitability for practical FRAM applications. Copyright 2001 American Institute of Physics

  3. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

    International Nuclear Information System (INIS)

    Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

    2010-01-01

    We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

  4. Capacitors.

    Science.gov (United States)

    Trotter, Donald M., Jr.

    1988-01-01

    Presents a historical backdrop for a discussion of capacitor design and function. Discusses the production, importance, and function of two types of miniature capacitors; electrolytic and multilayer ceramic capacitors. Describes the function of these miniature capacitors in comparison to the Leyden jar, a basic demonstration of capacitance. (CW)

  5. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  6. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one

    NARCIS (Netherlands)

    Widdershoven, Franciscus P.; Annema, Anne J.; Storms, Maurits M.N.; Pelgrom, Marcellinus J.M.; Pelgrom, Marcel J M

    2001-01-01

    A non-volatile, random access memory cell comprises first and second inverters each having an output node cross-coupled by cross-coupling means to an input node of the other inverter for forming a MOS RAM cell. The output node of each inverter is selectively connected via the conductor paths of

  8. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  9. Voice preprocessing system incorporating a real-time spectrum analyzer with programmable switched-capacitor filters

    Science.gov (United States)

    Knapp, G.

    1984-01-01

    As part of a speaker verification program for BISS (Base Installation Security System), a test system is being designed with a flexible preprocessing system for the evaluation of voice spectrum/verification algorithm related problems. The main part of this report covers the design, construction, and testing of a voice analyzer with 16 integrating real-time frequency channels ranging from 300 Hz to 3 KHz. The bandpass filter response of each channel is programmable by NMOS switched capacitor quad filter arrays. Presently, the accuracy of these units is limited to a moderate precision by the finite steps of programming. However, repeatability of characteristics between filter units and sections seems to be excellent for the implemented fourth-order Butterworth bandpass responses. We obtained a 0.1 dB linearity error of signal detection and measured a signal-to-noise ratio of approximately 70 dB. The proprocessing system discussed includes preemphasis filter design, gain normalizer design, and data acquisition system design as well as test results.

  10. Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60O3-Insulator (ZnO-Silicon Capacitors for Nonvolatile Applications

    Directory of Open Access Journals (Sweden)

    S. R. Krishnamoorthi

    2013-01-01

    Full Text Available In this work metal-ferroelectric-insulator-semiconductor (MFIS thin-film structures using Pb1.1Zr0.40Ti0.60O3 (PZT as the ferroelectric layer and zinc oxide (ZnO as the insulator layer were fabricated on n-type (100 Si substrate. Pb1.1Zr0.40Ti0.60O3 and ZnO thin films were prepared on Si by the sol-gel route and thermal deposition method, respectively. On the optimized PZT (140 nm and ZnO (40 nm films were examined by scanning electron microscope (SEM. From AFM data the root mean square (r.m.s. roughness of the film surface is 13.11 nm. The leakage current density of ZnO/n-Si (MIS structure was as low as 1.8 × 10−8 A/cm2 at 2.5 V. The capacitance versus voltage (C-V characteristics of the annealed ZnO/Si (MIS diode indicated the good interface properties and no hysteresis was observed. Au/PZT (140 nm/ZnO (40 nm/Si (100 leakage-current density was about 5.7 × 10−8 A/cm2 at positive bias voltage of 3 V. The large memory window width in C-V (capacitance-voltage curve of Au/PZT/ZnO/Si capacitor was about 2.9 V under ±12 V which thus possibly enables nonvolatile applications. The memory window as a function of temperature was also discussed.

  11. A programmable controller for constant primary peak current in capacitor charging fet switcher for nova

    International Nuclear Information System (INIS)

    Mihalka, A.

    1983-01-01

    New switching power supplies were designed for the 10 mm laser amplifiers in the Nova master oscillator room. The flashlamp supply must be repeatable. Therefore, the authors designed a constant current, linearly charging power supply. Since it is a capacitor, the load varies through-out the charge cycle. At first the load is great, and DI/DT of load current is at a maximum. As the capacitor charges the initial conditions for each cycle change, the power supply in effect sees a smaller capacitance, and DI/DT decreases. We need a way of gradually increasing the on-time of the current pulses so that the transistors in the power bridge are turned off when they reach their maximum peak current. The normal current sense response of the control chip is not fast enough to be useful for the application. The deadtime, or the time that all the bridge transistors are turned off, is fixed so that as the pulse width varies so does the period. We end up with a constant peak current, switching power supply whose frequency varies from 50 khz to 20 khz. Finally, an overcurrent latch protects the transistors from bridge or transformer faults. the circuit is described and results are shown

  12. Fabrication and operation methods of a one-time programmable (OTP) nonvolatile memory (NVM) based on a metal-oxide-semiconductor structure

    International Nuclear Information System (INIS)

    Cho, Seongjae; Lee, Junghoon; Jung, Sunghun; Park, Sehwan; Park, Byunggook

    2011-01-01

    In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system architecture model was to store central processing unit (CPU) instructions. By grafting the nanoscale fabrication technology and novel structuring onto the concept of the OTP memory, innovative high-density NVM appliances for mobile storage media may be possible. The program operation is performed by breaking down the thin oxide layer between the pn diode structure and the wordline (WL). The programmed state can be identified by an operation that reads the leakage currents through the broken oxide. Since the proposed OTP NVM is based on neither a transistor structure nor a charge storing mechanism, it is highly reliable and functional for realizing the ultra-large scale integration. The operation physics and the fabrication processes are also explained in detail.

  13. Non-volatile memories

    CERN Document Server

    Lacaze, Pierre-Camille

    2014-01-01

    Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

  14. Programmable controller with overcurrent latch for constant primary peak current in capacitor-charging FET switcher for Nova

    International Nuclear Information System (INIS)

    Mihalka, A.M.

    1983-01-01

    New switching power supplies were designed for the 10 mm laser amplifiers in the Nova Master Oscillator Room. The flashlamp supply must be repratable. Therefore, we designed a constant current, linearly charging power supply. Since it is a capacitor, the load varies throughout the charge cycle. At first the load is great, and di/dt of load current is at a maximum. As the capacitor charges the initial conditions for each cycle change, the power supply in effect sees a smaller capacitance, and di/dt decreases. We need a way of gradually increasing the on-time of the current pulses so that the transistors in the power bridge are turned off when they reach their maximum peak current. The normal current sense response of the control chip is not fast enough to be useful for our application. The deadtime, or the time that all the bridge transistors are turned off, is fixed so that as the pulse width varies so does the period. We end up with a constant peak current, switching power supply whose frequency varies from 50 khz to 20 khz. Finally, an overcurrent latch protects the transistors from bridge or transformer faults. The circuit is described and results are shown

  15. Fabrication and characterization of metal-ferroelectric (PbZr0.6Ti0.4O3)-insulator (La2O3)-semiconductor capacitors for nonvolatile memory applications

    Science.gov (United States)

    Juan, Trevor Pi-Chun; Lin, Cheng-Li; Shih, Wen-Chieh; Yang, Chin-Chieh; Lee, Joseph Ya-Min; Shye, Der-Chi; Lu, Jong-Hong

    2009-03-01

    Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb(Zr0.6,Ti0.4)O3 (PZT) ferroelectric layer and high-k lanthanum oxide (La2O3) insulator layer were fabricated. The outdiffusion of atoms between La2O3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ΔW ≈2dfEc≈0.8 V with higher annealing temperatures above 700 °C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600 °C-annealed samples. The C-V flatband voltage shift (ΔVFB) as a function of charge injection was characterized in this work. An energy band diagram of the Al/PZT//La2O3/p-Si system was proposed to explain the memory window and the flatband voltage shift.

  16. Vented Capacitor

    Science.gov (United States)

    Brubaker, Michael Allen; Hosking, Terry Alan

    2006-04-11

    A technique of increasing the corona inception voltage (CIV), and thereby increasing the operating voltage, of film/foil capacitors is described. Intentional venting of the capacitor encapsulation improves the corona inception voltage by allowing internal voids to equilibrate with the ambient environment.

  17. Emerging non-volatile memories

    CERN Document Server

    Hong, Seungbum; Wouters, Dirk

    2014-01-01

    This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

  18. Electrochemical capacitor

    Science.gov (United States)

    Anderson, Marc A.; Liu, Kuo -Chuan; Mohr, Charles M.

    1999-10-05

    An inexpensive porous metal oxide material having high surface area, good conductivity and high specific capacitance is advantageously used in an electrochemical capacitor. The materials are formed in a sol-gel process which affords control over the properties of the resultant metal oxide materials.

  19. Switchable capacitor

    NARCIS (Netherlands)

    Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, H.A.C.; Tilmans, Hendrikus; De Raedt, Walter

    2011-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

  20. Switchable capacitor

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Tilmans, H.A.C.; De Raedt, W.

    2003-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

  1. Rotary capacitor

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The rotating wheel of the rotary capacitor representing the most critical part of the new radio-frequency system of the synchro-cyclotron. The three rows of teeth on the circumference of the wheel pass between four rows of stator blades with a minimum clearance of 1 mm at a velocity of 1700 rev/min.

  2. Pluto's Nonvolatile Chemical Compounds

    Science.gov (United States)

    Grundy, William M.; Binzel, Richard; Cook, Jason C.; Cruikshank, Dale P.; Dalle Ore, Cristina M.; Earle, Alissa M.; Ennico, Kimberly; Jennings, Donald; Howett, Carly; Kaiser, Ralf-Ingo; Linscott, Ivan; Lunsford, A. W.; Olkin, Catherine B.; Parker, Alex Harrison; Parker, Joel Wm.; Philippe, Sylvain; Protopapa, Silvia; Quirico, Eric; Reuter, D. C.; Schmitt, Bernard; Singer, Kelsi N.; Spencer, John R.; Stansberry, John A.; Stern, S. Alan; Tsang, Constantine; Verbiscer, Anne J.; Weaver, Harold A.; Weigle, G. E.; Young, Leslie

    2016-10-01

    Despite the migration of Pluto's volatile ices (N2, CO, and CH4) around the surface on seasonal timescales, the planet's non-volatile materials are not completely hidden from view. They occur in a variety of provinces formed over a wide range of timescales, including rugged mountains and chasms, the floors of mid-latitude craters, and an equatorial belt of especially dark and reddish material typified by the informally named Cthulhu Regio. NASA's New Horizons probe observed several of these regions at spatial resolutions as fine as 3 km/pixel with its LEISA imaging spectrometer, covering wavelengths from 1.25 to 2.5 microns. Various compounds that are much lighter than the tholin-like macromolecules responsible for the reddish coloration, but that are not volatile at Pluto surface temperatures such as methanol (CH3OH) and ethane (C2H6) have characteristic absorption bands within LEISA's wavelength range. This presentation will describe their geographic distributions and attempt to constrain their origins. Possibilities include an inheritance from Pluto's primordial composition (the likely source of H2O ice seen on Pluto's surface) or ongoing production from volatile precursors through photochemistry in Pluto's atmosphere or through radiolysis on Pluto's surface. New laboratory data inform the analysis.This work was supported by NASA's New Horizons project.

  3. Multilayer capacitors, method for making multilayer capacitors

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam

    2018-03-06

    The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

  4. Capacitor Discharge - A Capacitor Tutorial [video

    OpenAIRE

    Naval Postgraduate School Physics

    2014-01-01

    NPS Physics Physics Demonstrations Here's a capacitor discharge demonstrated by physicist Dr. Dernardo. Dr. D gives a nice capacitor lesson along with some fireworks. Charging and Discharging a Capacitor is dangerous. Do not try this at home. Dr. Bruce Denardo uses eleven 9V batteries, connected in series for a total of 99 creating a pretty large spark.

  5. Programme

    OpenAIRE

    Hobday, E, fl. 1905, artist

    2003-01-01

    A photograph of an illustrated programme listing dances. The illustration shows a snake charmer playing to a snake while another man watches. Buildings and trees can be seen behind a wall in the distance. In the lower right-hand corner of the programme is the signature 'E. Hobday'. The programme is almost certainly related to the Punjab Ball, Lahore. It is placed next to the Punjab Ball Menu in the album and the Menu is also illustrated by 'E. Hobday'.

  6. The charge storage characteristics of ZrO2 nanocrystallite-based charge trap nonvolatile memory

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    ZrO 2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO 2 ) 0.6 (SiO 2 ) 0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO 2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO 2 nanocrystallite-based memory capacitor after post-annealing at 850 °C for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of ∼25% over a period of 10 years (determined by extrapolating the charge loss curve measured experimentally), even at 85 °C. Such 850 °C-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications

  7. Nanohybrid capacitor: the next generation electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K. [Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8558 (Japan)

    2010-10-15

    Conventional electric double layer capacitors (EDLC) designed with two symmetrical activated carbon electrodes can deliver substantially more power than similar size Li-ion batteries. There is presently a major effort to increase the energy density of EDLC s up to a target value in the vicinity of 20-30 Wh kg{sup -1}.The present review article deals with the recent contributions to get this high energy density and new approaches that have been made to increase the withstanding voltage of the EDLCs. Important alternative approach to meet this goal that is under serious investigation is to develop an asymmetric (hybrid) capacitors. Hybrid capacitor systems are the promising approach to meet the goal to effectively increase the energy density. The investigation is to develop hybrid capacitors has been initiated by Li-ion capacitors. And, now Nanohybrid capacitor certainly achieves as high energy density as Li-ion capacitors with higher stability, higher safety and higher productivity. This is the new lithium-ion based hybrid capacitor using the lithium titanate (Li{sub 4}Ti{sub 5}O{sub 12}) negative intercalation electrode that can operate at unusually high current densities. The high-rate Li{sub 4}Ti{sub 5}O{sub 12} negative electrode has a unique nano-structure consisting of unusually small nano-crystalline Li{sub 4}Ti{sub 5}O{sub 12} nucleated and grafted onto carbon nano-fiber anchors (nc-Li{sub 4}Ti{sub 5}O{sub 12}/CNF). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. Design considerations for a radiation hardened nonvolatile memory

    International Nuclear Information System (INIS)

    Murray, J.R.

    1993-01-01

    Sub-optimal design practices can reduce the radiation hardness of a circuit even though it is fabricated in a radiation hardened process. This is especially true for a nonvolatile memory, as compared to a standard digital circuit, where high voltages and unusual bias conditions are required. This paper will discuss the design technique's used in the development of a 64K EEPROM (Electrically Erasable Programmable Read Only Memory) to maximize radiation hardness. The circuit radiation test results will be reviewed in order to provide validation of the techniques

  9. Organic non-volatile memories from ferroelectric phase-separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

    2008-07-01

    New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

  10. Direct Mismatch Characterization of femto-Farad Capacitors

    KAUST Repository

    Omran, Hesham

    2015-08-17

    Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

  11. Direct Mismatch Characterization of femto-Farad Capacitors

    KAUST Repository

    Omran, Hesham; Elafandy, Rami T.; Arsalan, Muhammad; Salama, Khaled N.

    2015-01-01

    Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 􀀀 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

  12. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    Science.gov (United States)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    that limiting the current during electroforming leads to the coexistence of two resistance switching modes in TiO2 memristive devices [2]. They also present spectromicroscopic observations and modelling results for the Joule heating during switching, providing insights into the ON/OFF switching process [3]. Researchers in Korea have examined in detail the mechanism of electronic bipolar resistance switching in the Pt/TiO2/Pt structure and show that degradation in switching performance of this system can be explained by the modified distribution of trap densities [4]. The issue also includes studies of TiO2 that demonstrate analog memory, synaptic plasticity, and spike-timing-dependent plasticity functions, work that contributes to the development of neuromorphic devices that have high efficiency and low power consumption [5]. In addition to enabling a wide range of data storage and logic applications, electroresistive non-volatile memories invite us to re-evaluate the long-held paradigms in the condensed matter physics of oxides. In the past three years, much attention has been attracted to polarization-mediated electronic transport [6, 7] and domain wall conduction [8] as the key to the next generation of electronic and spintronic devices based on ferroelectric tunnelling barriers. Typically local probe experiments are performed on an ambient scanning probe microscope platform under conditions of high voltage stresses, conditions highly conducive to electrochemical reactions. Recent experiments [9-13] suggest that ionic motion can heavily contribute to the measured responses and compete with purely physical mechanisms. Electrochemical effects can also be expected in non-ferroelectric materials such as manganites and cobaltites, as well as for thick ferroelectrics under high-field conditions, as in capacitors and tunnelling junctions where the ionic motion could be a major contributor to electric field-induced strain. Such strain, in turn, can affect the effective

  13. A memristor-based nonvolatile latch circuit

    International Nuclear Information System (INIS)

    Robinett, Warren; Pickett, Matthew; Borghetti, Julien; Xia Qiangfei; Snider, Gregory S; Medeiros-Ribeiro, Gilberto; Williams, R Stanley

    2010-01-01

    Memristive devices, which exhibit a dynamical conductance state that depends on the excitation history, can be used as nonvolatile memory elements by storing information as different conductance states. We describe the implementation of a nonvolatile synchronous flip-flop circuit that uses a nanoscale memristive device as the nonvolatile memory element. Controlled testing of the circuit demonstrated successful state storage and restoration, with an error rate of 0.1%, during 1000 power loss events. These results indicate that integration of digital logic devices and memristors could open the way for nonvolatile computation with applications in small platforms that rely on intermittent power sources. This demonstrated feasibility of tight integration of memristors with CMOS (complementary metal-oxide-semiconductor) circuitry challenges the traditional memory hierarchy, in which nonvolatile memory is only available as a large, slow, monolithic block at the bottom of the hierarchy. In contrast, the nonvolatile, memristor-based memory cell can be fast, fine-grained and small, and is compatible with conventional CMOS electronics. This threatens to upset the traditional memory hierarchy, and may open up new architectural possibilities beyond it.

  14. Capacitor discharge engineering

    CERN Document Server

    Früngel, Frank B A

    1976-01-01

    High Speed Pulse Technology, Volume III: Capacitor Discharge Engineering covers the production and practical application of capacitor dischargers for the generation and utilization of high speed pulsed of energy in different forms. This nine-chapter volume discusses the principles of electric current, voltage, X-rays, gamma rays, heat, beams of electrons, neutrons and ions, magnetic fields, sound, and shock waves in gases and liquids. Considerable chapters consider the applications of capacitor discharges, such as impulse hardening of steel, ultrapulse welding of precision parts, X-ray flash t

  15. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  16. Suspended graphene variable capacitor

    OpenAIRE

    AbdelGhany, M.; Mahvash, F.; Mukhopadhyay, M.; Favron, A.; Martel, R.; Siaj, M.; Szkopek, T.

    2016-01-01

    The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays compr...

  17. A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report

    Energy Technology Data Exchange (ETDEWEB)

    DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R.; SMITH,PAUL M.; VANHEUSDEN,KAREL J.; WARREN,WILLIAM L.

    1999-11-01

    Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

  18. Materials for electrochemical capacitors

    Science.gov (United States)

    Simon, Patrice; Gogotsi, Yury

    2008-11-01

    Electrochemical capacitors, also called supercapacitors, store energy using either ion adsorption (electrochemical double layer capacitors) or fast surface redox reactions (pseudo-capacitors). They can complement or replace batteries in electrical energy storage and harvesting applications, when high power delivery or uptake is needed. A notable improvement in performance has been achieved through recent advances in understanding charge storage mechanisms and the development of advanced nanostructured materials. The discovery that ion desolvation occurs in pores smaller than the solvated ions has led to higher capacitance for electrochemical double layer capacitors using carbon electrodes with subnanometre pores, and opened the door to designing high-energy density devices using a variety of electrolytes. Combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries. The use of carbon nanotubes has further advanced micro-electrochemical capacitors, enabling flexible and adaptable devices to be made. Mathematical modelling and simulation will be the key to success in designing tomorrow's high-energy and high-power devices.

  19. Graphene-quantum-dot nonvolatile charge-trap flash memories

    International Nuclear Information System (INIS)

    Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

    2014-01-01

    Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

  20. Nonvolatile Memory Technology for Space Applications

    Science.gov (United States)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  1. Nonvolatile Rad-Hard Holographic Memory

    Science.gov (United States)

    Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

    2001-01-01

    We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

  2. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  3. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  4. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  5. Evaluation of Recent Technologies of Nonvolatile RAM

    Science.gov (United States)

    Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

    2008-08-01

    Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

  6. Electrically tuned super-capacitors

    OpenAIRE

    Chowdhury, Tazima S.; Grebel, Haim

    2015-01-01

    Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

  7. Mechanical states in wound capacitors

    International Nuclear Information System (INIS)

    Allen, J.J.; Reuter, R.C. Jr.

    1989-01-01

    The winding process is encountered frequently in manufacturing, such as winding of polymer films and paper, laminated pressure vessel construction, and the manufacture of wound capacitors. The winding of capacitors will typically involve hundreds of plies of conductor and dielectric wound over a core. Due to the large number of layers, the calculation of the mechanical studies within a wound capacitor is a significant computational task. The focus of Part II of this paper is the formulation and application of optimization techniques for the design of wound capacitors. The design criteria to be achieved is a specified uniform wound tension in a capacitor. The paper will formulate an optimization statement of the wound capacitor design problem, develop a technique for reducing the numerical calculation required to repeatedly analyze the capacitor as required by the optimization algorithm, and apply the technique to an example. 4 refs., 13 figs., 4 tabs

  8. Electrostatically telescoping nanotube nonvolatile memory device

    International Nuclear Information System (INIS)

    Kang, Jeong Won; Jiang Qing

    2007-01-01

    We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition

  9. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  10. Strain-controlled nonvolatile magnetization switching

    Science.gov (United States)

    Geprägs, S.; Brandlmaier, A.; Brandt, M. S.; Gross, R.; Goennenwein, S. T. B.

    2014-11-01

    We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magnetometry. These measurements demonstrate a significant strain-induced change of the magnetization, limited by an inefficient strain transfer and domain formation in the particular system studied. To overcome these obstacles, we address practicable engineering concepts and use a model to demonstrate that a strain-controlled, nonvolatile magnetization switching should be possible in appropriately engineered ferromagnetic/piezoelectric actuator hybrids.

  11. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  12. Flexible graphene-PZT ferroelectric nonvolatile memory.

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-29

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  13. Capacitor assembly and related method of forming

    Science.gov (United States)

    Zhang, Lili; Tan, Daniel Qi; Sullivan, Jeffrey S.

    2017-12-19

    A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

  14. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape

  15. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

  16. Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

    OpenAIRE

    Zhang, Qi; Whatmore, Roger W.

    2004-01-01

    We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on substrates Pt/Ti/SiO2/Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to r...

  17. Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories

    International Nuclear Information System (INIS)

    Zhang, Q.; Whatmore, R.W.

    2004-01-01

    We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on substrates Pt/Ti/SiO 2 /Si. Small amount of Mn-doped (≤1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn 2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn 4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics

  18. A Simple, Successful Capacitor Lab

    Science.gov (United States)

    Ennis, William

    2011-01-01

    Capacitors are a fundamental component of modern electronics. They appear in myriad devices and in an enormous range of sizes. Although our students are taught the function and analysis of capacitors, few have the opportunity to use them in our labs.

  19. Protection of large capacitor banks

    International Nuclear Information System (INIS)

    Sprott, J.C.; Lovell, T.W.

    1982-06-01

    Large capacitor banks, as used in many pulsed plasma experiments, are subject to catastrophic failure in the event of a short in the output or in an individual capacitor. Methods are described for protecting such banks to minimize the damage and down-time caused by such a failure

  20. Radiation-hardened nonvolatile MNOS RAM

    International Nuclear Information System (INIS)

    Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

    1983-01-01

    A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s

  1. Split-phase motor running as capacitor starts motor and as capacitor run motor

    Directory of Open Access Journals (Sweden)

    Yahaya Asizehi ENESI

    2016-07-01

    Full Text Available In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The magnitude of capacitor that will develop maximum torque in capacitor start motor and capacitor run motor are investigated and determined by simulation. Each of these capacitors is connected to the auxiliary winding of split-phase motor thereby transforming it into capacitor start or capacitor run motor. The starting current and starting torque of the split-phase motor (SPM, capacitor run motor (CRM and capacitor star motor (CSM are compared for their suitability in their operational performance and applications.

  2. Self-patterning of arrays of ferroelectric capacitors: description by theory of substrate mediated strain interactions

    International Nuclear Information System (INIS)

    Dawber, M; Szafraniak, I; Alexe, M; Scott, J F

    2003-01-01

    Self-patterning presents an appealing alternative to lithography for the production of arrays of nanoscale ferroelectric capacitors for use in high density non-volatile memory devices. However current levels of registration achieved experimentally are far from adequate for this application. To provide a guide for experiment we have applied the theories developed for self-patterning of semiconductor nanocrystals to two self-patterning systems of potential interest for ferroelectric memory applications, metallic bismuth oxide on bismuth titanate and ferroelectric lead zirconate titanate on strontium titanate. (letter to the editor)

  3. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.

  4. Polyvinylidene fluoride film as a capacitor dielectric

    Science.gov (United States)

    Dematos, H. V.

    1981-01-01

    Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

  5. Ferroelectric Fractional-Order Capacitors

    KAUST Repository

    Agambayev, Agamyrat

    2017-07-25

    Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

  6. Ferroelectric Fractional-Order Capacitors

    KAUST Repository

    Agambayev, Agamyrat; Patole, Shashikant P.; Farhat, Mohamed; Elwakil, Ahmed; Bagci, Hakan; Salama, Khaled N.

    2017-01-01

    Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

  7. Overview of emerging nonvolatile memory technologies.

    Science.gov (United States)

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  8. Overview of emerging nonvolatile memory technologies

    Science.gov (United States)

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  9. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  10. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  11. Radiation evaluation of commercial ferroelectric nonvolatile memories

    International Nuclear Information System (INIS)

    Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

    1991-01-01

    This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

  12. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  13. Mutual capacitor and its applications

    Directory of Open Access Journals (Sweden)

    Chun Li

    2014-06-01

    Full Text Available This study presents a new ac circuit element – the mutual capacitor, being a dual of the mutual inductor, which is also a new ac transformer. This element is characteristic of the mutual-capacitance coupling of a multi-capacitance system. A unity-coupled mutual capacitor works as an ideal current or voltage transformer, and incidentally acts as waveform separating when inductor employed or waveform converting from square-wave to quasi-sine or waveform filtering, between ports. As a transformer, the mutual capacitor is easy to design, easy for heat cooling, more accurate for current or voltage transformation, dissipating less energy as well as saving materials, suitable for high-power and high-voltage applications. Experiments to demonstrate performances of unity-coupled mutual capacitors are also given.

  14. Force on an Asymmetric Capacitor

    National Research Council Canada - National Science Library

    Bahder, Thomas

    2003-01-01

    .... At present, the physical basis for the Biefeld-Brown effect is not understood. The order of magnitude of the net force on the asymmetric capacitor is estimated assuming two different mechanisms of charge conduction between its electrodes...

  15. High density energy storage capacitor

    International Nuclear Information System (INIS)

    Whitham, K.; Howland, M.M.; Hutzler, J.R.

    1979-01-01

    The Nova laser system will use 130 MJ of capacitive energy storage and have a peak power capability of 250,000 MW. This capacitor bank is a significant portion of the laser cost and requires a large portion of the physical facilities. In order to reduce the cost and volume required by the bank, the Laser Fusion Program funded contracts with three energy storage capacitor producers: Aerovox, G.E., and Maxwell Laboratories, to develop higher energy density, lower cost energy storage capacitors. This paper describes the designs which resulted from the Aerovox development contract, and specifically addresses the design and initial life testing of a 12.5 kJ, 22 kV capacitor with a density of 4.2 J/in 3 and a projected cost in the range of 5 cents per joule

  16. Efficiency Improvement of Capacitor Operation

    Directory of Open Access Journals (Sweden)

    V. P. Kashcheev

    2010-01-01

    Full Text Available A system of modernized capacitor ball-cleaning that prevents formation of depositions on internal capacitor tube surface has been developed in the paper.The system has been introduced at the Minsk TPP-4 (Power Block No.5. The paper presupposes that the economic effect will be nearly 0.43 million US dollars per year at one poer block with turbine Т-250/300-240.

  17. PLZT capacitor on glass substrate

    Science.gov (United States)

    Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

    2016-01-05

    A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

  18. Radiation effects in polycarbonate capacitors

    Directory of Open Access Journals (Sweden)

    Vujisić Miloš

    2009-01-01

    Full Text Available The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged.

  19. Total-dose radiation-induced degradation of thin film ferroelectric capacitors

    International Nuclear Information System (INIS)

    Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

    1990-01-01

    Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

  20. Capacitor charging FET switcher with controller to adjust pulse width

    Science.gov (United States)

    Mihalka, Alex M.

    1986-01-01

    A switching power supply includes an FET full bridge, a controller to drive the FETs, a programmable controller to dynamically control final output current by adjusting pulse width, and a variety of protective systems, including an overcurrent latch for current control. Power MOSFETS are switched at a variable frequency from 20-50 kHz to charge a capacitor load from 0 to 6 kV. A ferrite transformer steps up the DC input. The transformer primary is a full bridge configuration with the FET switches and the secondary is fed into a high voltage full wave rectifier whose output is connected directly to the energy storage capacitor. The peak current is held constant by varying the pulse width using predetermined timing resistors and counting pulses. The pulse width is increased as the capacitor charges to maintain peak current. A digital ripple counter counts pulses, and after the desired number is reached, an up-counter is clocked. The up-counter output is decoded to choose among different resistors used to discharge a timing capacitor, thereby determining the pulse width. A current latch shuts down the supply on overcurrent due to either excessive pulse width causing transformer saturation or a major bridge fault, i.e., FET or transformer failure, or failure of the drive circuitry.

  1. Electromechanical capacitor for energy transfer

    International Nuclear Information System (INIS)

    Carroll, T.A.; Chowdhuri, P.; Marshall, J.

    1983-01-01

    Inductive energy transfer between two magnets can be achieved with almost 100% efficiency with a transfer capacitor. However, the bulk and cost will be high, and reliability low if conventional capacitors are used. A homopolar machine, used as a capacitor, will be compact and economical. A homopolar machine was designed with counter-rotating copper disks completely immersed in a liquid metal (NaK-78) to work as a pulse capacitor. Absence of solid-brush collectors minimized wear and frictional losses. Wetting of the copper disks throughout the periphery by the liquid metal minimized the resistive losses at the collector interface. A liquid-metal collector would, however, introduce hydrodynamic and magnetohydrodynamic losses. The selected liquid metal, e.g., NaK-78 will produce the lowest of such losses among the available liquid metals. An electromechanical capacitor of this design was tested at various dc magnetic fields. Its measured capacitance was about 100 farads at a dc magnetic field of 1.15 tesla

  2. Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

    Science.gov (United States)

    Jeong, Doo Seok; Hwang, Cheol Seong

    2018-04-18

    Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  4. Shapeable short circuit resistant capacitor

    Science.gov (United States)

    Taylor, Ralph S.; Myers, John D.; Baney, William J.

    2015-10-06

    A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

  5. Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

    NARCIS (Netherlands)

    With, de G.

    1993-01-01

    An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data

  6. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  7. Super miniaturization of film capacitor dielectrics

    Science.gov (United States)

    Lavene, B.

    1981-01-01

    The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

  8. Integrated capacitor arrangement for ultrahigh capacitance values

    NARCIS (Netherlands)

    Roozeboom, F.; Klootwijk, J.H.; Kemmeren, A.L.A.M.; Reefman, D.; Verhoeven, J.F.C.M.

    2011-01-01

    An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar

  9. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  10. Split-phase motor running as capacitor starts motor and as capacitor run motor

    OpenAIRE

    Yahaya Asizehi ENESI; Jacob TSADO; Mark NWOHU; Usman Abraham USMAN; Odu Ayo IMORU

    2016-01-01

    In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The ma...

  11. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  12. Compositionally Graded Multilayer Ceramic Capacitors.

    Science.gov (United States)

    Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

    2017-09-27

    Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (filters and power converters.

  13. Identification of nonvolatile compounds in clove (Syzygium aromaticum) from Manado

    Science.gov (United States)

    Fathoni, A.; Saepudin, E.; Cahyana, A. H.; Rahayu, D. U. C.; Haib, J.

    2017-07-01

    Syzygium aromaticum (clove) are native to Indonesia and have been widely used in food industry due to their flavor. Nonvolatile compounds contribute to flavor, mainly in their taste. Currently, there is very little information available about nonvolatile compounds in clove. Identification of nonvolatile compounds is important to improve clove's value. Compound extraction was conducted by maceration in ethanol. Fractionations of the extract were performed by using gravity column chromatography on silica gel and Sephadex LH-20 as stationary phase. Nonvolatile compounds were identified by Liquid Chromatography-Tandem Mass Spectrometry (LC-MS/MS). LC-MS/MS was operated in negative mode with 0.1 % formic acid in water and acetonitrile as mobile phase. Nonvolatile compounds were identified by fragment analysis and compared to references. Several compounds had been identified and characterized asquinic acid, monogalloylglucose, gallic acid, digalloylglucose, isobiflorin, biflorin, ellagic acid, hydroxygallic acid, luteolin, quercetin, naringenin, kaempferol, isorhamnetin, dimethoxyluteolin, and rhamnetin. These compounds had two main flavor perceptions, i.e. astringent, and bitter.

  14. Nanostructured Electrode Materials for Electrochemical Capacitor Applications.

    Science.gov (United States)

    Choi, Hojin; Yoon, Hyeonseok

    2015-06-02

    The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013). Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

  15. Novel applications of non-volatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Duthie, I

    1982-01-01

    The author reviews briefly the evolution of the programmable memory and the alternative technologies, before discussing the operation of a small EEPROM when used in conjunction with a microprocessor for typical applications. Some applications are reviewed and the opportunities which eeproms can offer for new applications are presented, together with the requirements for artificial intelligence to become a reality.

  16. An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

    Science.gov (United States)

    Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

    2018-02-01

    Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

  17. Non-volatile memory devices with redox-active diruthenium molecular compound

    International Nuclear Information System (INIS)

    Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

    2016-01-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

  18. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

    2013-01-01

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

  19. Nonvolatile memory design magnetic, resistive, and phase change

    CERN Document Server

    Li, Hai

    2011-01-01

    The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

  20. Ferroelectric memories: A possible answer to the hardened nonvolatile question

    International Nuclear Information System (INIS)

    Messenger, G.C.; Coppage, F.N.

    1988-01-01

    Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI (Very Large-Scale Integration) manufacturing techniques which are basically nonvolatile and radiation hard. The memory can be made NDRO (Nondestructive Readout) for strategic systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems

  1. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  2. A Two-terminal Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai

    2017-01-01

    This letter proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. It is application independent and can be specified by rated...... voltage, ripple current, equivalent series resistance, and operational frequency range. The concept, control method, self-power scheme, and impedance characteristics of the active capacitor are presented. A case study of the proposed active capacitor for a capacitive DC-link application is discussed....... The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify the functionality of the proposed capacitor....

  3. Capacitor discharges, magnetohydrodynamics, X-rays, ultrasonics

    CERN Document Server

    Früngel, Frank B A

    1965-01-01

    High Speed Pulse Technology, Volume 1: Capacitor Discharges - Magnetohydrodynamics - X-Rays - Ultrasonics deals with the theoretical and engineering problems that arise in the capacitor discharge technique.This book discusses the characteristics of dielectric material, symmetrical switch tubes with mercury filling, and compensation conductor forms. The transformed discharge for highest current peaks, ignition transformer for internal combustion engines, and X-ray irradiation of subjects in mechanical motion are also elaborated. This text likewise covers the transformed capacitor discharge in w

  4. Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

  5. New Temperature-Insensitive Electronically-Tunable Grounded Capacitor Simulator

    OpenAIRE

    Abuelma'atti, Muhammad Taher; Khan, Muhammad Haroon

    1996-01-01

    A new circuit for simulating a grounded capacitor is presented. The circuit uses one operationalamplifier (OA), three operational-transconductance amplifiers (OTAs), and one capacitor. The realized capacitor is temperature-insensitive and electronically tunable. Experimental results are included.

  6. Nanoporous carbon for electrochemical capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, Michael P.; Bunker, Bruce Conrad; Limmer, Steven J.; Yelton, William Graham

    2010-05-01

    Nanoporous carbon (NPC) is a purely graphitic material with highly controlled densities ranging from less than 0.1 to 2.0 g/cm3, grown via pulsed-laser deposition. Decreasing the density of NPC increases the interplanar spacing between graphene-sheet fragments. This ability to tune the interplanar spacing makes NPC an ideal model system to study the behavior of carbon electrodes in electrochemical capacitors and batteries. We examine the capacitance of NPC films in alkaline and acidic electrolytes, and measure specific capacitances as high as 242 F/g.

  7. Nanoporous carbon for electrochemical capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Siegal, Michael P.; Bunker, Bruce Conrad; Limmer, Steven J.; Yelton, William Graham

    2010-04-01

    Nanoporous carbon (NPC) is a purely graphitic material with highly controlled densities ranging from less than 0.1 to 2.0 g/cm3, grown via pulsed-laser deposition. Decreasing the density of NPC increases the interplanar spacing between graphene-sheet fragments. This ability to tune the interplanar spacing makes NPC an ideal model system to study the behavior of carbon electrodes in electrochemical capacitors and batteries. We examine the capacitance of NPC films in alkaline and acidic electrolytes, and measure specific capacitances as high as 242 F/g.

  8. Capacitor ageing in electronic devices

    Directory of Open Access Journals (Sweden)

    Richard B. N. Vital

    2015-10-01

    Full Text Available The moment when an electronic component doesn’t work like requirements, previously established is a task that need to be considered since began of a system design. However, the use of different technologies, operating under several environmental conditions, makes a component choice a complex step in system design. This paper analyzes the effects that ageing phenomenon of capacitors may introduce in electronic devices operation. For this reason, reliability concepts, processes and mechanism of degradation are presented. Additionally, some mathematical models are presented to assist maintenance activities or component replacement. The presented approach compares the operability of intact and aged components.

  9. Research on laser detonation pulse circuit with low-power based on super capacitor

    Science.gov (United States)

    Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

    2018-03-01

    According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

  10. Simple Ways to Make Real Capacitors

    Science.gov (United States)

    Herman, Rhett

    2014-01-01

    Many of us have grabbed two pieces of aluminum foil and a paper towel, quickly sandwiched them together, and exclaimed in lecture, "Look! It's easy to make a capacitor!" Then we move on from there, calculating things such as capacitances with various dielectrics or plate sizes, the capacitance of capacitor networks, RC circuits,…

  11. Dielectric material options for integrated capacitors

    NARCIS (Netherlands)

    Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

    2014-01-01

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

  12. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  13. Microprocessor Controlled Capacitor Bank Switching System for ...

    African Journals Online (AJOL)

    In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

  14. Nanostructured Electrode Materials for Electrochemical Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Hojin Choi

    2015-06-01

    Full Text Available The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013. Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

  15. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  16. Electric field mapping inside metallized film capacitors

    DEFF Research Database (Denmark)

    Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

    2015-01-01

    (s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

  17. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  18. Method for refreshing a non-volatile memory

    Science.gov (United States)

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  19. Active non-volatile memory post-processing

    Energy Technology Data Exchange (ETDEWEB)

    Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

    2017-04-11

    A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

  20. Phase change materials in non-volatile storage

    OpenAIRE

    Ielmini, Daniele; Lacaita, Andrea L.

    2011-01-01

    After revolutionizing the technology of optical data storage, phase change materials are being adopted in non-volatile semiconductor memories. Their success in electronic storage is mostly due to the unique properties of the amorphous state where carrier transport phenomena and thermally-induced phase change cooperate to enable high-speed, low-voltage operation and stable data retention possible within the same material. This paper reviews the key physical properties that make this phase so s...

  1. Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory

    International Nuclear Information System (INIS)

    Wang Qin; Jia Rui; Guan Weihua; Li Weilong; Liu Qi; Hu Yuan; Long Shibing; Chen Baoqin; Liu Ming; Ye Tianchun; Lu Wensheng; Jiang Long

    2008-01-01

    In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed

  2. 2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

  3. Charge Fluctuations in Nanoscale Capacitors

    Science.gov (United States)

    Limmer, David T.; Merlet, Céline; Salanne, Mathieu; Chandler, David; Madden, Paul A.; van Roij, René; Rotenberg, Benjamin

    2013-09-01

    The fluctuations of the charge on an electrode contain information on the microscopic correlations within the adjacent fluid and their effect on the electronic properties of the interface. We investigate these fluctuations using molecular dynamics simulations in a constant-potential ensemble with histogram reweighting techniques. This approach offers, in particular, an efficient, accurate, and physically insightful route to the differential capacitance that is broadly applicable. We demonstrate these methods with three different capacitors: pure water between platinum electrodes and a pure as well as a solvent-based organic electrolyte each between graphite electrodes. The total charge distributions with the pure solvent and solvent-based electrolytes are remarkably Gaussian, while in the pure ionic liquid the total charge distribution displays distinct non-Gaussian features, suggesting significant potential-driven changes in the organization of the interfacial fluid.

  4. Charge fluctuations in nanoscale capacitors.

    Science.gov (United States)

    Limmer, David T; Merlet, Céline; Salanne, Mathieu; Chandler, David; Madden, Paul A; van Roij, René; Rotenberg, Benjamin

    2013-09-06

    The fluctuations of the charge on an electrode contain information on the microscopic correlations within the adjacent fluid and their effect on the electronic properties of the interface. We investigate these fluctuations using molecular dynamics simulations in a constant-potential ensemble with histogram reweighting techniques. This approach offers, in particular, an efficient, accurate, and physically insightful route to the differential capacitance that is broadly applicable. We demonstrate these methods with three different capacitors: pure water between platinum electrodes and a pure as well as a solvent-based organic electrolyte each between graphite electrodes. The total charge distributions with the pure solvent and solvent-based electrolytes are remarkably Gaussian, while in the pure ionic liquid the total charge distribution displays distinct non-Gaussian features, suggesting significant potential-driven changes in the organization of the interfacial fluid.

  5. Physical and Electrical Characterization of Polymer Aluminum Capacitors

    Science.gov (United States)

    Liu, David; Sampson, Michael J.

    2010-01-01

    Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

  6. Physical and Electrical Characterization of Aluminum Polymer Capacitors

    Science.gov (United States)

    Liu, David; Sampson, Michael J.

    2010-01-01

    Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

  7. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  8. High Energy Density Capacitors, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Capacitor size and reliability are often limiting factors in pulse power, high speed switching, and power management and distribution (PMAD) systems. T/J...

  9. High Energy Density Polymer Film Capacitors

    National Research Council Canada - National Science Library

    Boufelfel, Ali

    2006-01-01

    High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

  10. Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

    Science.gov (United States)

    Gifford, Kenneth Douglas

    Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

  11. Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

    Directory of Open Access Journals (Sweden)

    J. W. Horng

    2011-09-01

    Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

  12. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  13. Transmission Line Resonator Segmented with Series Capacitors

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

    2016-01-01

    Transmission line resonators are often used as coils in high field MRI. Due to distributed nature of such resonators, coils based on them produce inhomogeneous field. This work investigates application of series capacitors to improve field homogeneity along the resonator. The equations for optimal...... values of evenly distributed capacitors are presented. The performances of the segmented resonator and a regular transmission line resonator are compared....

  14. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  15. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    Energy Technology Data Exchange (ETDEWEB)

    Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  16. Capacitor blocks for linear transformer driver stages.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Kumpyak, E V; Smorudov, G V; Zherlitsyn, A A

    2014-01-01

    In the Linear Transformer Driver (LTD) technology, the low inductance energy storage components and switches are directly incorporated into the individual cavities (named stages) to generate a fast output voltage pulse, which is added along a vacuum coaxial line like in an inductive voltage adder. LTD stages with air insulation were recently developed, where air is used both as insulation in a primary side of the stages and as working gas in the LTD spark gap switches. A custom designed unit, referred to as a capacitor block, was developed for use as a main structural element of the transformer stages. The capacitor block incorporates two capacitors GA 35426 (40 nF, 100 kV) and multichannel multigap gas switch. Several modifications of the capacitor blocks were developed and tested on the life time and self breakdown probability. Blocks were tested both as separate units and in an assembly of capacitive module, consisting of five capacitor blocks. This paper presents detailed design of capacitor blocks, description of operation regimes, numerical simulation of electric field in the switches, and test results.

  17. Protection of MOS capacitors during anodic bonding

    Science.gov (United States)

    Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

    2002-07-01

    We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

  18. Use of non-volatile memories for SSC detector readout

    International Nuclear Information System (INIS)

    Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

    1990-01-01

    Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

  19. Physics of failure based analysis of aluminium electrolytic capacitor

    International Nuclear Information System (INIS)

    Sahoo, Satya Ranjan; Behera, S.K.; Kumar, Sachin; Varde, P.V.; Ravi Kumar, G.

    2016-01-01

    Electrolytic capacitors are one of the important devices in various power electronic systems, such as motor drives, uninterruptible power supply, electric vehicles and dc power supply. Electrolytic capacitors are also the integral part of many other electronic devices. One of the primary function of electrolytic capacitors is the smoothing of voltage ripple and storing electrical energy. However, the electrolytic capacitor has the shortest lifespan of components in power electronics. Past experiences show that electrolytic capacitor tends to degrade and fail faster under high electrical or thermal stress conditions during operations. The primary failure mechanism of an electrolytic capacitor is the evaporation of the electrolyte due to electrical or thermal overstress. This leads to the drift in the values of two important parameters-capacitance and equivalent series resistance (ESR) of the electrolytic capacitor. An attempt has been made to age the electrolytic capacitor and validate the results. The overall goal is to derive the accurate degradation model of the electrolytic capacitor. (author)

  20. Method of manufacturing a capacitor on a nanowire and integrated circuit having such a capacitor

    NARCIS (Netherlands)

    2009-01-01

    A method of manufacturing a capacitor on a wafer, and an IC comprising such a capacitor is disclosed. The method comprises forming a plurality of vertical structures (140) each having a sub-micron thickness on the wafer; and growing a metal-insulator-metal (MIM) stack (150) over the plurality of

  1. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan

    2016-03-16

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  2. Channel equalization techniques for non-volatile memristor memories

    KAUST Repository

    Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

    2016-01-01

    Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

  3. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  4. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    Science.gov (United States)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  5. Fast risetime one megajoule capacitor bank

    International Nuclear Information System (INIS)

    Markins, D.; Baker, W.L.; Reinovsky, R.E.; Clark, J.G.

    1976-01-01

    A 100 kV, 1.1 MJ capacitor bank for plasma research experiments has been constructed for the Air Force Weapons Laboratory. The system consists of twenty, individual, low inductance capacitor modules, each utilizing a four element switch package approximately 2 meters wide. Each module contains twenty-four ''scyllac'' type 1.85 μF capacitors. A 100 kV output pulse is obtained by charging the top half of each module to +50 kV and the bottom half to -50 kV. A pressurized, low inductance multichannel switch package incorporating four separately triggered elements is designed to fit into the parallel plate transmission line system of the capacitor module. The bank is configured in a cross shape with twenty modules spaced uniformly around the perimeter of a parallel plate transmission line. The transmission line is constructed with 32 mil aluminum and insulated with 60 mils of mylar. The bank is designed to feed an easily replaceable central coaxial load. The entire system has been repeatedly fired at 100 kV with a dummy resistive load and has delivered 2.2 x 10 7 amperes of current with a risetime of 1.1 μsec. The total measured system inductance is 2.2 nH. This system represents a significant advance in the development of reliable, fast, high current capacitor banks

  6. Energy Efficient Graphene Based High Performance Capacitors.

    Science.gov (United States)

    Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

    2017-07-10

    Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  7. Downhole transmission system comprising a coaxial capacitor

    Science.gov (United States)

    Hall, David R [Provo, UT; Pixton, David S [Lehi, UT; Johnson, Monte L [Orem, UT; Bartholomew, David B [Springville, UT; Hall, Jr., H. Tracy; Rawle, Michael [Springville, UT

    2011-05-24

    A transmission system in a downhole component comprises a plurality of data transmission elements. A coaxial cable having an inner conductor and an outer conductor is disposed within a passage in the downhole component such that at least one capacitor is disposed in the passage and having a first terminal coupled to the inner conductor and a second terminal coupled to the outer conductor. Preferably the transmission element comprises an electrically conducting coil. Preferably, within the passage a connector is adapted to electrically connect the inner conductor of the coaxial cable and the lead wire. The coaxial capacitor may be disposed between and in electrically communication with the connector and the passage. In another embodiment a connector is adapted to electrical connect a first and a second portion of the inner conductor of the coaxial cable and a coaxial capacitor is in electrical communication with the connector and the passage.

  8. Pseudo-capacitor device for aqueous electrolytes

    Science.gov (United States)

    Prakash, Jai; Thackeray, Michael M.; Dees, Dennis W.; Vissers, Donald R.; Myles, Kevin M.

    1998-01-01

    A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A.sub.2 ›B.sub.2-x Pb.sub.x !O.sub.7-y, where A=Pb, Bi, and B=Ru, Ir, and Ocapacitor. The amount of expensive ruthenate and iridium can be substantially reduced in the pseudo-capacitor by increasing the lead content while improving energy storage capacity.

  9. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  10. Improving the mechanical stability of a standard capacitor

    CSIR Research Space (South Africa)

    Moodley, SS

    2003-04-01

    Full Text Available temperature coefficients of capacitance, they were susceptible to mechanical shock. During 1999, a project was initiated to improve the mechanical stability of the capacitors after two capacitors were damaged during transit, while being transported as separate...

  11. Li-Ion, Ultra-capacitor Based Hybrid Energy Module

    National Research Council Canada - National Science Library

    Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

    2007-01-01

    .... To determine the optimum utilization of ultra-capacitors in applications where high power density and high energy density are required, an optimized Li-Ion/Ultra-capacitor Hybrid Energy Module (HEM...

  12. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  13. Apple juice composition: sugar, nonvolatile acid, and phenolic profiles.

    Science.gov (United States)

    Lee, H S; Wrolstad, R E

    1988-01-01

    Apples from Michigan, Washington, Argentina, Mexico, and New Zealand were processed into juice; the 8 samples included Golden Delicious, Jonathan, Granny Smith, and McIntosh varieties. Liquid chromatography was used for quantitation of sugars (glucose, fructose, sucrose, and sorbitol), nonvolatile acids (malic, quinic, citric, shikimic, and fumaric), and phenolics (chlorogenic acid and hydroxymethylfurfural [HMF]). Other determinations included pH, 0Brix, and L-malic acid. A number of compositional indices for these authentic juices, e.g., chlorogenic acid content, total malic - L-malic difference, and the HMF:chlorogenic ratio, were at variance with recommended standards. The phenolic profile was shown to be particularly influenced by gelatin fining, with peak areas decreasing by as much as 50%. The L-malic:total malic ratio serves as a better index for presence of synthetic malic acid than does the difference between the 2 determinations. No apparent differences in chemical composition could be attributed to geographic origin.

  14. Bioorganic nanodots for non-volatile memory devices

    International Nuclear Information System (INIS)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-01-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

  15. Bioorganic nanodots for non-volatile memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  16. Organic nonvolatile memory devices with charge trapping multilayer graphene film

    International Nuclear Information System (INIS)

    Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

    2012-01-01

    We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

  17. Non-volatile polarization switch of magnetic domain wall velocity

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

    2015-12-21

    Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

  18. Multistate nonvolatile straintronics controlled by a lateral electric field

    International Nuclear Information System (INIS)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-01-01

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications. (fast track communication)

  19. Multistate nonvolatile straintronics controlled by a lateral electric field.

    Science.gov (United States)

    Iurchuk, V; Doudin, B; Kundys, B

    2014-07-23

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

  20. Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

    International Nuclear Information System (INIS)

    Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S.M.; Chen, Jason; Liao, I.H.; Yeh, Fon-Shan

    2010-01-01

    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation.

  1. Liquid Crystals of Lithium Dodecylbenzenesulfonate for Electric Double Layer Capacitors

    International Nuclear Information System (INIS)

    Kuzmin, Andrey Vasil’evich; Yurtov, Evgeny V.

    2016-01-01

    Ionic lyotropic liquid crystals based on lithium dodecylbenzenesulfonate were used as electrolytes for electric double layer capacitors with carbon fibrous electrodes. The capacitors were tasted by cyclic voltammetry, galvanostatic charge and discharge, and impedance spectroscopy. The highest specific capacitance was achieved for electrical double layer capacitor equipped with ionic lyotropic liquid crystal of lithium dodecylbenzenesulfonate 35 wt% in water. The specific capacitance of capacitor was calculated from galvanostatic discharge curves – 15 F/g of carbon fibrous material

  2. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  3. Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

    DEFF Research Database (Denmark)

    Christensen, Kåre Tais

    2001-01-01

    This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

  4. Performance of ALVAND 1. capacitor bank

    International Nuclear Information System (INIS)

    Torabi-fard, A.; Farahani, M.; Ebrani, M.; Rostami, R.; Daghighian, F.

    1978-01-01

    This report describes the specifications of the capacitor bank for the ALVAND I, Linear theta pinch experiment and the results of some tests performed on it. A one-meter-wide module includes the basic components such as capacitors, Spark gaps, and crowbar triggers. Complementary parts such as ground system, pressurised dry air system and safety system were added. With a rise-time of about three micro-seconds and a total current of six million amperes it is possible to produce ion temperature in excess of one kev for a few microseconds. Different probes were used to measure the magnetic field and the total current

  5. Printed Barium Strontium Titanate capacitors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

    2015-08-31

    In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

  6. Graphene spin capacitor for magnetic field sensing

    OpenAIRE

    Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

    2010-01-01

    An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

  7. Antenna Miniaturization with MEMS Tunable Capacitors

    DEFF Research Database (Denmark)

    Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

    2014-01-01

    In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

  8. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  9. Clocking Scheme for Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1998-01-01

    A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

  10. Iodine encapsulation in CNTs and its application for electrochemical capacitor

    International Nuclear Information System (INIS)

    Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S.; Rashid, M.; Syakirin, A.

    2016-01-01

    We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

  11. Application of PFN capacitors in high power systems

    International Nuclear Information System (INIS)

    Parker, R.D.

    1979-01-01

    The application of lightweight reliable capacitors in a mobile energy store is discussed. The relationship of system design parameters to capacitor size and life is displayed. Electric fields and weights of a 21 J/lb and a 77 J/lb pulse discharge capacitor design are given. Estimates of future near-tern development are made

  12. Dynamics of a Liquid Dielectric Attracted by a Cylindrical Capacitor

    Science.gov (United States)

    Nardi, Rafael; Lemos, Nivaldo A.

    2007-01-01

    The dynamics of a liquid dielectric attracted by a vertical cylindrical capacitor are studied. Contrary to what might be expected from the standard calculation of the force exerted by the capacitor, the motion of the dielectric is different depending on whether the charge or the voltage of the capacitor is held constant. The problem turns out to…

  13. Iodine encapsulation in CNTs and its application for electrochemical capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S., E-mail: kawasaki.shinji@nitech.ac.jp [Nagoya Institute of Technology, Gokiso, Showa, Nagoya, Aichi (Japan); Rashid, M.; Syakirin, A. [Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

  14. Capacitors and Resistance-Capacitance Networks.

    Science.gov (United States)

    Balabanian, Norman; Root, Augustin A.

    This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

  15. Charge and Energy Stored in a Capacitor

    Science.gov (United States)

    Kraftmakher, Yaakov

    2012-01-01

    Using a data-acquisition system, the charge and energy stored in a capacitor are measured and displayed during the charging/discharging process. The experiment is usable as a laboratory work and/or a lecture demonstration. (Contains 3 figures.)

  16. Charging a Capacitor with a Photovoltaic Module

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco; Navarro, Luis Barba

    2017-01-01

    Charging a capacitor with a photovoltaic module is an experiment which reveals a lot about the modules characteristics. It is customary to represent these characteristics with an equivalent circuit whose elements represent its physical parameters. The behavior of a photovoltaic module is very similar to that of a single cell but the electric…

  17. Effects of Radiation on Capacitor Dielectrics

    Science.gov (United States)

    Bouquet, F. L.; Somoano, R. B.; Frickland, P. O.

    1987-01-01

    Data gathered on key design parameters. Report discusses study of electrical and mechanical properties of irradiated polymer dielectric materials. Data compiled for use by designers of high-energy-density capacitors that operate in presence of ionizing radiation. Study focused on polycarbonates, polyetheretherketones, polymethylpentenes, polyimides (including polyetherimide), polyolefins, polysulfones (including polyethersulfone and polyphenylsulfone), and polyvinylidene fluorides.

  18. Capacitor discharge process for welding braided cable

    Science.gov (United States)

    Wilson, Rick D.

    1995-01-01

    A capacitor discharge process for welding a braided cable formed from a plurality of individual cable strands to a solid metallic electrically conductive member comprises the steps of: (a) preparing the electrically conductive member for welding by bevelling one of its end portions while leaving an ignition projection extending outwardly from the apex of the bevel; (b) clamping the electrically conductive member in a cathode fixture; (c) connecting the electrically conductive member clamped in the cathode fixture to a capacitor bank capable of being charged to a preselected voltage value; (d) preparing the braided cable for welding by wrapping one of its end portions with a metallic sheet to form a retaining ring operable to maintain the individual strands of the braided cable in fixed position within the retaining ring; (e) clamping the braided cable and the retaining ring as a unit in an anode fixture so that the wrapped end portion of the braided cable faces the ignition projection of the electrically conductive member; and (f) moving the cathode fixture towards the anode fixture until the ignition projection of the electrically conductive member contacts the end portion of the braided cable thereby allowing the capacitor bank to discharge through the electrically conductive member and through the braided cable and causing the electrically conductive member to be welded to the braided cable via capacitor discharge action.

  19. Capacitor Monitoring for Modular Multilevel Converters

    DEFF Research Database (Denmark)

    Deng, Fujin; Liu, Dong; Wang, Yanbo

    2017-01-01

    ). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of the MMC. This paper proposed an effective monitoring method for the capacitance in each SM of the MMC. The proposed method reveals the relationship between the arm average capacitance and the capacitance...

  20. Humidity Testing of PME and BME Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.; Herzberger, Jaemi

    2014-01-01

    Cracks in ceramic capacitors are one of the major causes of failures during operation of electronic systems. Humidity testing has been successfully used for many years to verify the absence of cracks and assure quality of military grade capacitors. Traditionally, only precious metal electrode (PME) capacitors were used in high reliability applications and the existing requirements for humidity testing were developed for this type of parts. With the advance of base metal electrode (BME) capacitors, there is a need for assessment of the applicability of the existing techniques for the new technology capacitors. In this work, variety of different PME and BME capacitors with introduced cracks were tested in humid environments at different voltages and temperatures. Analysis of the test results indicates differences in the behavior and failure mechanisms for BME and PME capacitors and the need for different testing conditions.

  1. Reliability Evaluation of Power Capacitors in a Wind Turbine System

    DEFF Research Database (Denmark)

    Zhou, Dao; Blaabjerg, Frede

    2018-01-01

    With the increasing penetration of wind power, reliable and cost-effective wind energy production is of more and more importance. The doubly-fed induction generator based partial-scale wind power converter is still dominating in the existing wind farms. In this paper, the reliability assessment...... block diagram is used to bridge the gap between the Weibull distribution based component-level individual capacitor and the capacitor bank. A case study of a 2 MW wind power converter shows that the lifetime is significantly reduced from the individual capacitor to the capacitor bank. Besides, the dc...... of power capacitors is studied considering the annual mission profile. According to an electro-thermal stress evaluation, the time-to-failure distribution of both the dc-link capacitor and ac-side filter capacitor is detailed investigated. Aiming for the systemlevel reliability analysis, a reliability...

  2. Capacitor performance limitations in high power converter applications

    DEFF Research Database (Denmark)

    El-Khatib, Walid Ziad; Holbøll, Joachim; Rasmussen, Tonny Wederberg

    2013-01-01

    High voltage low inductance capacitors are used in converters as HVDC-links, snubber circuits and sub model (MMC) capacitances. They facilitate the possibility of large peak currents under high frequent or transient voltage applications. On the other hand, using capacitors with larger equivalent...... series inductances include the risk of transient overvoltages, with a negative effect on life time and reliability of the capacitors. These allowable limits of such current and voltage peaks are decided by the ability of the converter components, including the capacitors, to withstand them over...... the expected life time. In this paper results are described from investigations on the electrical environment of these capacitors, including all the conditions they would be exposed to, thereby trying to find the tradeoffs needed to find a suitable capacitor. Different types of capacitors with the same voltage...

  3. Faraday Rotator 5 kV Capacitor Bank

    International Nuclear Information System (INIS)

    Fetterman, C.C.

    1975-01-01

    A Faraday rotator 5 kV capacitor bank is a pulsed output power supply used to energize Faraday rotators for optical isolation in the ''LLL kJ Glass Laser System.'' Each supply contains either one, two or three parallel 240 μF storage capacitors depending on the size of the isolator used. Generally, the ''A*''(216 μH) isolator is energized with one capacitor, the ''A''(116 μH) isolator uses two capacitors and the ''B''(87 μH) isolator requires three capacitors. All models of isolators have been tested with four capacitors under maximum voltage and 25 feet of RG-217 cable with no hazardous effects. Except for the number of capacitors in each unit, the supplies are otherwise physically identical

  4. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

    2012-01-01

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

  5. Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

    National Research Council Canada - National Science Library

    Likharev, Konstantin K; Ma, Tso-Ping

    2006-01-01

    .... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

  6. Role of Non-Volatile Memories in Automotive and IoT Markets

    Science.gov (United States)

    2017-03-01

    Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

  7. Mass transfer of nonvolatile organic compounds from porous media

    Science.gov (United States)

    Khachikian, Crist Simon

    This thesis presents data pertaining to the mass transfer of nonvolatile organic compounds from porous media. Physical properties of porous solids, including surface and pore areas, are studied. Information from these studies, along with dissolution data, are used to develop correlations relating the Sherwood Number to the Peclet Number. The contaminant used in this study is naphthalene; the solids used are Moffett Sand (MS), Borden Sand (BS), Lampblack (LB), and Silica Gel (SG). Surface area results indicate that contamination at 0.1% reduces the area of MS and SG by 48 and 37%, respectively, while contamination at 1.0% reduces the area of MS, BS, and SG by 59, 56, and 40%, respectively. Most of the reduction in area originates in the reduction of pore areas and volumes, where the contaminant precipitates. After long-term storage, surface areas did not recover to their original values due to an "irreversible" fraction of naphthalene. Treatment with heat or solvent or both was necessary to completely remove the contamination. For lampblack, treatment at 100°C decreased areas while treatment at 250°C increased them. Treatment at 250°°C probably opened pores while that at 100°C may have blocked more pores by redistributing the tar-like contaminant characteristic of lampblack. Contaminated MS and SG solids are packed in columns through which water is pumped. The effluent began at a relatively high concentration (˜70% of solubility) for both samples. However, SG column concentrations dropped quickly, never achieving steady state while the MS samples declined more gradually towards steady state. The high pore areas of the SG samples are believed to cause this behavior. The steady state portion of the MS dissolution history is used to develop mass transfer correlations. The correlation in this study differs from previous work in two major ways: (1) the exponent on the Pe is three times larger and (2) the limiting Sh is 106 times smaller. These results suggest that

  8. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  9. Highly Stretchable Non-volatile Nylon Thread Memory

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  10. A graphene-based non-volatile memory

    Science.gov (United States)

    Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

    2015-09-01

    We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

  11. Quantitative reconstruction of the nonvolatile sensometabolome of a red wine.

    Science.gov (United States)

    Hufnagel, Jan Carlos; Hofmann, Thomas

    2008-10-08

    The first comprehensive quantitative determination of 82 putative taste-active metabolites and mineral salts, the ranking of these compounds in their sensory impact based on dose-over-threshold (DoT) factors, followed by the confirmation of their sensory relevance by taste reconstruction and omission experiments enabled the decoding of the nonvolatile sensometabolome of a red wine. For the first time, the bitterness of the red wine could be demonstrated to be induced by subthreshold concentrations of phenolic acid ethyl esters and flavan-3-ols. Whereas the velvety astringent onset was imparted by three flavon-3-ol glucosides and dihydroflavon-3-ol rhamnosides, the puckering astringent offset was caused by a polymeric fraction exhibiting molecular masses above >5 kDa and was found to be amplified by the organic acids. The perceived sourness was imparted by l-tartaric acid, d-galacturonic acid, acetic acid, succinic acid, l-malic acid, and l-lactic acid and was slightly suppressed by the chlorides of potassium, magnesium, and ammonium, respectively. In addition, d-fructose and glycerol as well as subthreshold concentrations of glucose, 1,2-propandiol, and myo-inositol were found to be responsible for the sweetness, whereas the mouthfulness and body of the red wine were induced only by glycerol, 1,2-propandiol, and myo-inositol.

  12. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  13. Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

    KAUST Repository

    Omran, Hesham

    2016-04-21

    Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\\\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

  14. Multilayer ceramic capacitors for pulsed power, high temperature applications

    International Nuclear Information System (INIS)

    Cygan, S.; McLarney, J.; Prymak, J.; Bohn, P.

    1991-01-01

    The performance of the multilayer ceramic capacitors (MLC) in high frequency power applications has improved significantly over the last years. One of the possible applications of MLC capacitors is the automotive industry where repetitive discharging of capacitors is required. A 0.25-μF capacitor using NPO dielectric subjected to repetitive discharging with the rate of 700 pulses per second, magnitude of 600-V and 195-A peak currents showed no degradation in performance at 298 K or 398 K even after 1 billion discharge cycles. Less than a 5-K temperature rise was observed under these conditions. The most exciting, newly emerging utilization for MLC capacitors, however, might be the high temperature application (up to 473 K for underhood utilization), where ceramic capacitors with higher volumetric efficiency as compared to glass or polymer type capacitors prove very superior. Moreover ceramic capacitors, which next to glass capacitors exhibit the greatest radiation resistance among all insulating materials (Hanks and Hamman 1971), might also be best suited in the future for high temperature operation in space environment. The pulsed power performance of the 0.25-μF NPO capacitor was evaluated under repetitive discharge conditions (200 V, 700 pps) at high temperature, 473 K, and the results are presented in this paper

  15. Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

    KAUST Repository

    Omran, Hesham; Alahmadi, Hamzah; Salama, Khaled N.

    2016-01-01

    Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

  16. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  17. Impact of Thyristors Controlled Series Capacitor Devices and Optimal Power Flow on Power Systems

    Directory of Open Access Journals (Sweden)

    Fatiha LAKDJA

    2010-12-01

    Full Text Available This paper presents an algorithm, for solving the Optimal Power Flow problem with flexible AC transmission systems (FACTS. The type of FACTS devices is used: thyristor-controlled series capacitor (TCSC. A method to determine the optimal location of thyristor controlled series compensators has been suggested. The proposed approaches have been implemented on an adapted IEEE 26 bus system. The simulation results are discussed to show the performance of the proposed algorithm and our “FACTS programmer “simulator technique, which are compared with TCSC and without TCSC.

  18. Diagnostics and performance evaluation of multikilohertz capacitors

    International Nuclear Information System (INIS)

    McDuff, G.; Nunnally, W.C.; Rust, K.; Sarjeant, J.

    1980-01-01

    The observed performance of nanofarad polypropylene-silicone oil, mica paper, and polytetrafluoroethylene-silicone oil capacitors discharged in a 100-ns, 1-kA pulse with a pulse repetition frequency of 1 kHz is presented. The test facility circuit, diagnostic parameters, and the preliminary test schedule are outlined as a basis for discussion of the observed failure locations and proposed failure mechanisms. Most of the test data and discussion presented involves the polypropylene-silicone oil units

  19. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  20. Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

    2013-04-30

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

  1. Capacitor requirements for controlled thermonuclear experiments and reactors

    International Nuclear Information System (INIS)

    Boicourt, G.P.; Hoffman, P.S.

    1975-01-01

    Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested. (U.S.)

  2. Capacitor requirements for controlled thermonuclear experiments and reactors

    International Nuclear Information System (INIS)

    Boicourt, G.P.; Hoffman, P.S.

    1975-01-01

    Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested

  3. A compact 100 kV high voltage glycol capacitor.

    Science.gov (United States)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  4. High power density capacitor and method of fabrication

    Science.gov (United States)

    Tuncer, Enis

    2012-11-20

    A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

  5. Super capacitor modeling with artificial neural network (ANN)

    Energy Technology Data Exchange (ETDEWEB)

    Marie-Francoise, J.N.; Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, INRETS (LRE T31) 90 - Belfort (France)

    2004-07-01

    This paper presents super-capacitors modeling using Artificial Neural Network (ANN). The principle consists on a black box nonlinear multiple inputs single output (MISO) model. The system inputs are temperature and current, the output is the super-capacitor voltage. The learning and the validation of the ANN model from experimental charge and discharge of super-capacitor establish the relationship between inputs and output. The learning and the validation of the ANN model use experimental results of 2700 F, 3700 F and a super-capacitor pack. Once the network is trained, the ANN model can predict the super-capacitor behaviour with temperature variations. The update parameters of the ANN model are performed thanks to Levenberg-Marquardt method in order to minimize the error between the output of the system and the predicted output. The obtained results with the ANN model of super-capacitor and experimental ones are in good agreement. (authors)

  6. Method of manufacturing a shapeable short-resistant capacitor

    Science.gov (United States)

    Taylor, Ralph S.; Myers, John D.; Baney, William J.

    2013-04-02

    A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

  7. MOSFET and MOS capacitor responses to ionizing radiation

    Science.gov (United States)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  8. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    Energy Technology Data Exchange (ETDEWEB)

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  9. Nonvolatile, semivolatile, or volatile: redefining volatile for volatile organic compounds.

    Science.gov (United States)

    Võ, Uyên-Uyén T; Morris, Michael P

    2014-06-01

    Although widely used in air quality regulatory frameworks, the term "volatile organic compound" (VOC) is poorly defined. Numerous standardized tests are currently used in regulations to determine VOC content (and thus volatility), but in many cases the tests do not agree with each other, nor do they always accurately represent actual evaporation rates under ambient conditions. The parameters (time, temperature, reference material, column polarity, etc.) used in the definitions and the associated test methods were created without a significant evaluation of volatilization characteristics in real world settings. Not only do these differences lead to varying VOC content results, but occasionally they conflict with one another. An ambient evaporation study of selected compounds and a few formulated products was conducted and the results were compared to several current VOC test methodologies: SCAQMD Method 313 (M313), ASTM Standard Test Method E 1868-10 (E1868), and US. EPA Reference Method 24 (M24). The ambient evaporation study showed a definite distinction between nonvolatile, semivolatile, and volatile compounds. Some low vapor pressure (LVP) solvents, currently considered exempt as VOCs by some methods, volatilize at ambient conditions nearly as rapidly as the traditional high-volatility solvents they are meant to replace. Conversely, bio-based and heavy hydrocarbons did not readily volatilize, though they often are calculated as VOCs in some traditional test methods. The study suggests that regulatory standards should be reevaluated to more accurately reflect real-world emission from the use of VOC containing products. The definition of VOC in current test methods may lead to regulations that exclude otherwise viable alternatives or allow substitutions of chemicals that may limit the environmental benefits sought in the regulation. A study was conducted to examine volatility of several compounds and a few formulated products under several current VOC test

  10. Experimental analysis of an MIM capacitor with a concave shield

    International Nuclear Information System (INIS)

    Liu Lintao; Yu Mingyan; Wang Jinxiang

    2009-01-01

    A novel shielding scheme is developed by inserting a concave shield between a metal-insulator-metal (MIM) capacitor and the silicon substrate. Chip measurements reveal that the concave shield improves the quality factor by 11% at 11.8 GHz and 14% at 18.8 GHz compared with an unshielded MIM capacitor. It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer. Moreover, because the concave shields simplify substrate modeling, a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.

  11. Evaluation of Case Size 0603 BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2015-01-01

    High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

  12. Pressure Effects Analysis of National Ignition Facility Capacitor Module Events

    International Nuclear Information System (INIS)

    Brereton, S; Ma, C; Newton, M; Pastrnak, J; Price, D; Prokosch, D

    1999-01-01

    Capacitors and power conditioning systems required for the National Ignition Facility (NIF) have experienced several catastrophic failures during prototype demonstration. These events generally resulted in explosion, generating a dramatic fireball and energetic shrapnel, and thus may present a threat to the walls of the capacitor bay that houses the capacitor modules. The purpose of this paper is to evaluate the ability of the capacitor bay walls to withstand the overpressure generated by the aforementioned events. Two calculations are described in this paper. The first one was used to estimate the energy release during a fireball event and the second one was used to estimate the pressure in a capacitor module during a capacitor explosion event. Both results were then used to estimate the subsequent overpressure in the capacitor bay where these events occurred. The analysis showed that the expected capacitor bay overpressure was less than the pressure tolerance of the walls. To understand the risk of the above events in NIF, capacitor module failure probabilities were also calculated. This paper concludes with estimates of the probability of single module failure and multi-module failures based on the number of catastrophic failures in the prototype demonstration facility

  13. Accelerated Aging Experiments for Capacitor Health Monitoring and Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper discusses experimental setups for health monitoring and prognostics of electrolytic capacitors under nominal operation and accelerated aging conditions....

  14. Aging Methodologies and Prognostic Health Management for Electrolytic Capacitors

    Data.gov (United States)

    National Aeronautics and Space Administration — Understanding the ageing mechanisms of electronic components critical avionics systems such as the GPS and INAV are of critical importance. Electrolytic capacitors...

  15. Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

    Science.gov (United States)

    Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

    2017-08-16

    The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

  16. Nonmedical application of computed tomography to power capacitor quality assesment

    International Nuclear Information System (INIS)

    Kruger, R.P.

    1981-01-01

    Present research and development efforts at Los Alamos Scientific Laboratory require the design and use of high-efficiency rapid-discharge energy storage capacitors for laser isotope separation and plasma physics programs. In these applications, capacitors are subjected to electrical, mechanical, thermal, and other environmental stresses. These stresses cause the dielectric constant to change due to gasification from arcing at nonsoldering connections, which produce a chemical reduction of the dielectric material. This effectively limits the lifetime of the capacitor. The programs mentioned above require capacitors with a multikilohertz frequency response at a current of tens of kiloamperes and a voltage of at least 100 kV. The lifetime of such capacitors should exceed 10 10 charge/discharge cycles. Such capacitors do not presently exist. The exploration of new capacitor designs will require the use of both electrical functional tests and tests that show the changes in internal physical structure as the capacitor is repeatedly stressed by the charge/discharge cycle. The integration of electrical and structural tests throughout the life cycle of a candidate capacitor makes it imperative that the structural integrity tests be nondestructive. Computed tomography (CT) makes this integration possible. The work reported here is the result of a pilot project designed to show the potential use of CT for this application. This work includes visualization of material defects using both a layered sequence of conventional tomographic slices and orthogonal multiangular pseudoradiographs generated from these slices

  17. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

    2017-10-11

    The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

  18. Ceramic capacitor exhibiting graceful failure by self-clearing, method for fabricating self-clearing capacitor

    Science.gov (United States)

    Kaufman, David Y [Chicago, IL; Saha, Sanjib [Santa Clara, CA

    2006-08-29

    A short-resistant capacitor comprises an electrically conductive planar support substrate having a first thickness, a ceramic film deposited over the support substrate, thereby defining a ceramic surface; and a metallic film deposited over the ceramic surface, said film having a second thickness which is less than the first thickness and which is between 0.01 and 0.1 microns.

  19. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  20. Physics based Degradation Modeling and Prognostics of Electrolytic Capacitors under Electrical Overstress Conditions

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper proposes a physics based degradation modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors are critical components in...

  1. Prognostics Health Management and Physics based failure Models for Electrolytic Capacitors

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors and MOSFETs are the two major...

  2. Crispv programme

    International Nuclear Information System (INIS)

    Marinkovicj, N.

    CRISPV (Criticality and Spectrum code) is a multigroup neutron spectrum code for homogeneous reactor cores and is actually a somewhat modified version of the original CRISP programme. It is a combination of DATAPREP-II and BIGG-II programmes. It is assumed that the reactor cell is a cylindrical fuel rod in the light or heavy water moderator. DATEPREP-II CODE forms the multigroup data for homogeneous reactor and prepares the input parameters for the BIGG-II code. It has its own nuclear data library on a separate tape in binary mode. BIGG-II code is a multigroup neutron spectrum and criticality code for a homogenized medium. It has as well its own separate data library. In the CRISPV programme the overlay structure enables automatic handling of data calculated in the DATAPREP-II programme and needed in the BIGG-II core. Both programmes are written in FORTRAN for CDC 3600. Using the programme is very efficient and simple

  3. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Science.gov (United States)

    Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

    2016-07-01

    Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

  4. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  5. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  6. Enhanced non-volatile and updatable holography using a polymer composite system.

    Science.gov (United States)

    Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

    2012-03-12

    Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

  7. Impedance Characteristics Modeling of a Two-Terminal Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai; Lu, Minghui

    2017-01-01

    to overcome the above issues. In this paper, the modeling of the active capacitor is investigated and a voltage feed-forward compensation scheme is proposed for overshoot reduction. Therefore, the impedance, equivalent capacitance, ESR, and ESL, of the active capacitor can be specified. A case study based...

  8. Physicochemical assessment criteria for high-voltage pulse capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

    2016-12-15

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  9. Trench capacitor and method for producing the same

    NARCIS (Netherlands)

    2009-01-01

    A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to

  10. Two-Capacitor Problem: A More Realistic View.

    Science.gov (United States)

    Powell, R. A.

    1979-01-01

    Discusses the two-capacitor problem by considering the self-inductance of the circuit used and by determining how well the usual series RC circuit approximates the two-capacitor problem when realistic values of L, C, and R are chosen. (GA)

  11. DC-to-DC converter comprising a reconfigurable capacitor unit

    NARCIS (Netherlands)

    2008-01-01

    The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

  12. Powder based superdielectric materials for novel Capacitor design

    Science.gov (United States)

    2017-06-01

    found in cars, smartphones and other devices have adequate energy densities but lack optimal electric power delivery performance [4]. Stated differently... physical damage to the electrodes [5]. Conversely, capacitors store energy electrostatically by releasing excited state electrons collected on a...overview of capacitor theory is presented as a means of highlighting key physics principles applicable to this research. First, the concept of

  13. NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

    Science.gov (United States)

    Sampson, Mike; Brusse, Jay

    2018-01-01

    Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

  14. Metallized Film Capacitor Lifetime Evaluation and Failure Mode Analysis

    CERN Document Server

    Gallay, R.

    2015-06-15

    One of the main concerns for power electronic engineers regarding capacitors is to predict their remaining lifetime in order to anticipate costly failures or system unavailability. This may be achieved using a Weibull statistical law combined with acceleration factors for the temperature, the voltage, and the humidity. This paper discusses the different capacitor failure modes and their effects and consequences.

  15. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  16. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  17. DC-to-DC converter comprising a reconfigurable capacitor unit

    NARCIS (Netherlands)

    Klootwijk, J.H.; Bergveld, H.J.; Roozeboom, F.; Reefman, D.; Ruigrok, J.

    2013-01-01

    The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

  18. Physicochemical assessment criteria for high-voltage pulse capacitors

    International Nuclear Information System (INIS)

    Darian, L. A.; Lam, L. Kh.

    2016-01-01

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  19. Charging damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

  20. Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander

    2016-01-01

    Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

  1. Evaluation of Commercial Automotive-Grade BME Capacitors

    Science.gov (United States)

    Liu, Donhang

    2014-01-01

    Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life.

  2. Problems of increasing specific characteristics of pulse capacitors and cables

    International Nuclear Information System (INIS)

    Kuchinskij, G.S.; Monastyrskij, A.E.; Shilin, O.V.

    1984-01-01

    Requirements for high specific energy are practically related to all types of pulse capacitors of energy storage. At present the specific energy for most types of home and foreign pulse capacitors is about 0.1 MJ/m 3 at operating electric field intensity 70-100 kV/mm. It is shown that the basic means for increasing the specific energy and working intensity is the application of new polymeric film materials. Application of paper-film and film insulation permits to develop the specific types of capacitors designed for a limited service life in an aperiodic discharge mode with lower reliabiliy and the specific energy upto 0.5 MJ/m 3 . Characteristics of separate types of pulse capacitors and cables are given, and reliability criterion is considered. Measures of increasing reliability and service life for pulse capacitors and cables, used as tokamak power supplies are enumerated

  3. Reliability of capacitors for DC-link applications - An overview

    DEFF Research Database (Denmark)

    Wang, Huai; Blaabjerg, Frede

    2013-01-01

    DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of DC-link in power electronic converters...... from two aspects: 1) reliability-oriented DC-link design solutions; 2) conditioning monitoring of DC-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their DC-link applications....

  4. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  5. Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

    Science.gov (United States)

    Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

    2013-07-01

    We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  6. WORKSHOP REPORT - CONSIDERATIONS FOR DEVELOPING LEACHING TEST METHODS FOR SEMI- AND NON-VOLATILE ORGANIC COMPOUNDS

    Science.gov (United States)

    The report provides a summary of the information exchange at a workshop on the potential for release of semi- or non-volatile organic constituents at contaminated sites where sub-surface treatment has been used to control migration, and from waste that is disposed or re-used. The...

  7. Low-power non-volatile spintronic memory: STT-RAM and beyond

    International Nuclear Information System (INIS)

    Wang, K L; Alzate, J G; Khalili Amiri, P

    2013-01-01

    The quest for novel low-dissipation devices is one of the most critical for the future of semiconductor technology and nano-systems. The development of a low-power, universal memory will enable a new paradigm of non-volatile computation. Here we consider STT-RAM as one of the emerging candidates for low-power non-volatile memory. We show different configurations for STT memory and demonstrate strategies to optimize key performance parameters such as switching current and energy. The energy and scaling limits of STT-RAM are discussed, leading us to argue that alternative writing mechanisms may be required to achieve ultralow power dissipation, a necessary condition for direct integration with CMOS at the gate level for non-volatile logic purposes. As an example, we discuss the use of the giant spin Hall effect as a possible alternative to induce magnetization reversal in magnetic tunnel junctions using pure spin currents. Further, we concentrate on magnetoelectric effects, where electric fields are used instead of spin-polarized currents to manipulate the nanomagnets, as another candidate solution to address the challenges of energy efficiency and density. The possibility of an electric-field-controlled magnetoelectric RAM as a promising candidate for ultralow-power non-volatile memory is discussed in the light of experimental data demonstrating voltage-induced switching of the magnetization and reorientation of the magnetic easy axis by electric fields in nanomagnets. (paper)

  8. High-performance non-volatile organic ferroelectric memory on banknotes

    KAUST Repository

    Khan, Yasser

    2012-03-21

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Feasibility of nonvolatile buffers in capillary electrophoresis-electrospray ionization-mass spectrometry of proteins

    NARCIS (Netherlands)

    Eriksson, Jonas H.C.; Mol, Roelof; Somsen, Govert W.; Hinrichs, Wouter L.J.; Frijlink, Henderik W.; de Jong, Gerhardus J.

    2004-01-01

    The combination of capillary electrophoresis (CE) and electrospray ionization-mass spectrometry (ESI-MS) via a triaxial interface was studied as a potential means for the characterization of intact proteins. To evaluate the possibility to use a nonvolatile electrolyte for CE, the effect of sodium

  10. Low-temperature process steps for realization of non-volatile memory devices

    NARCIS (Netherlands)

    Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

    2007-01-01

    In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

  11. The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

    International Nuclear Information System (INIS)

    McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.L.

    1987-01-01

    Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment

  12. High-performance non-volatile organic ferroelectric memory on banknotes.

    Science.gov (United States)

    Khan, M A; Bhansali, Unnat S; Alshareef, H N

    2012-04-24

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

    Science.gov (United States)

    Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

    2018-06-10

    High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. The design of programme-controlled gain and linear pulse amplifier

    International Nuclear Information System (INIS)

    Guan Xuemei; Chen Chunkai; Northeast Normal Univ., Changchun; Qiao Shuang; Zhou Chuansheng

    2006-01-01

    The authors have designed a kind of new-style programme-controlled gain and linear pulse amplifier with accurate gausses of CR-RC-CR shaping circuit structure. The use of non-volatile digital electric potential device and accurate operational amplifier makes the circuit structure simple greatly, makes the ability stronger that resists assault. It can realize multistage gain in succession and make the drift of temperature low and make the linearity of pulse well. (authors)

  15. Monitoring programme

    International Nuclear Information System (INIS)

    1994-06-01

    Her Majesty's Inspectorate of Pollution's 1992 report on its programme of monitoring radioactive substances is presented. Site operators' returns are verified and the report provides independent data on the environmental impact of authorized disposal of radioactive wastes. Radiation doses which may have been received by members of the public, fall well below the International Commission for Radiological Protection's (ICRP) recommended annual doses. (UK)

  16. Development of High Temperature Capacitor Technology and Manufacturing Capability

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2011-05-15

    The goal of the Development of High Temperature Capacitor Technology and Manufacturing Capability program was to mature a production-ready supply chain for reliable 250°C FPE (fluorinated polyester) film capacitors by 2011. These high-temperature film capacitors enable both the down hole drilling and aerospace industries by enabling a variety of benefits including: - Deeper oil exploration in higher temperature and pressure environments - Enabling power electronic and control equipment to operate in higher temperature environments - Enabling reduced cooling requirements of electronics - Increasing reliability and life of capacitors operating below rated temperature - Enabling capacitors to handle higher electrical losses without overheating. The key challenges to bringing the FPE film capacitors to market have been manufacturing challenges including: - FPE Film is difficult to handle and wind, resulting in poor yields - Voltage breakdown strength decreases when the film is wound into capacitors (~70% decrease) - Encapsulation technologies must be improved to enable higher perature operation - Manufacturing and test cycle time is very long As a direct result of this program most of the manufacturing challenges have been met. The FPE film production metalization and winding yield has increased to over 82% from 70%, and the voltage breakdown strength of the wound capacitors has increased 270% to 189 V/μm. The high temperature packaging concepts are showing significant progress including promising results for lead attachments and hermetic packages at 200°C and non-hermetic packages at 250°C. Manufacturing and test cycle time will decrease as the market for FPE capacitors develops.

  17. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  18. Laboratory-scale thyristor controlled series capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Matsuki, J.; Ikeda, K.; Abe, M. [Kyoto University, Kyoto (Japan)

    1996-10-20

    This paper describes the results of an experimental study on the characteristics of a thyristor controlled series capacitor (TCSC). At present, there are two major thyristor controlled series compensation projects in the U.S.: the Kayenta ASC and the Slatt TCSC. However, there has been little operating experience and thus further understanding of the characteristics of TCSC is still to be sought. Therefore, a laboratory-scale TCSC was produced and installed in a laboratory power system. The impedance characteristics, waveshapes of voltages and currents in the TCSC circuit, and harmonics, for various thyristor firing angles, and insertion responses were measured and analyzed. In particular, effects of the size of the circuit components, i.e., parasitic resistance, additional damping resistance and series reactor, on the overall TCSC performances were investigated. The results were compared with EMTP simulations. 10 refs., 7 figs.

  19. Capacitor with a composite carbon foam electrode

    Science.gov (United States)

    Mayer, Steven T.; Pekala, Richard W.; Kaschmitter, James L.

    1999-01-01

    Carbon aerogels used as a binder for granularized materials, including other forms of carbon and metal additives, are cast onto carbon or metal fiber substrates to form composite carbon thin film sheets. The thin film sheets are utilized in electrochemical energy storage applications, such as electrochemical double layer capacitors (aerocapacitors), lithium based battery insertion electrodes, fuel cell electrodes, and electrocapacitive deionization electrodes. The composite carbon foam may be formed by prior known processes, but with the solid partides being added during the liquid phase of the process, i.e. prior to gelation. The other forms of carbon may include carbon microspheres, carbon powder, carbon aerogel powder or particles, graphite carbons. Metal and/or carbon fibers may be added for increased conductivity. The choice of materials and fibers will depend on the electrolyte used and the relative trade off of system resistivity and power to system energy.

  20. Design definition of a mechanical capacitor

    Science.gov (United States)

    Michaelis, T. D.; Schlieban, E. W.; Scott, R. D.

    1977-01-01

    A design study and analyses of a 10 kW-hr, 15 kW mechanical capacitor system was studied. It was determined that magnetically supported wheels constructed of advanced composites have the potential for high energy density and high power density. Structural concepts are analyzed that yield the highest energy density of any structural design yet reported. Particular attention was paid to the problem of 'friction' caused by magnetic and I to the second power R losses in the suspension and motor-generator subsystems, and low design friction levels have been achieved. The potentially long shelf life of this system, and the absence of wearing parts, provide superior performance over conventional flywheels supported with mechanical bearings. Costs and economies of energy storage wheels were reviewed briefly.

  1. Chemical sensitivity of Mo gate Mos capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lombardi, R.M.; Aragon, R. [Laboratorio de Peliculas delgadas, Facultad de Ingenieria, Paseo Colon 850, 1063, Buenos Aires (Argentina)

    2006-07-01

    Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10{sup 11} cm{sup -2} e-v{sup -1}, in pure nitrogen, to 2.5 x 10{sup 11} cm{sup -2} e-v{sup -1} in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

  2. Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

    Directory of Open Access Journals (Sweden)

    S. Maikap

    2011-01-01

    Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

  3. Floating body cell a novel capacitor-less DRAM cell

    CERN Document Server

    Ohsawa, Takashi

    2011-01-01

    DRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing serious difficulty in shrinking the size of the capacitor whose capacitance needs to be kept almost constant (20~30fF) throughout generations. The availability of a new DRAM cell which does not rely on an explicit capacitor for storing its data is more than ever awaited for further increasing the bit dens

  4. A light-powered bio-capacitor with nanochannel modulation.

    Science.gov (United States)

    Rao, Siyuan; Lu, Shanfu; Guo, Zhibin; Li, Yuan; Chen, Deliang; Xiang, Yan

    2014-09-03

    An artificial bio-capacitor system is established, consisting of the proton-pump protein proteorhodopsin and a modified alumina nanochannel, inspired by the capacitor-like behavior of plasma membranes realized through the cooperation of ion-pump and ion-channel proteins. Capacitor-like features of this simplified system are realized and identified, and the photocurrent duration time can be modulated by nanochannel modification to obtain favorable square-wave currents. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Comb-Line Filter with Coupling Capacitor in Ground Plane

    Directory of Open Access Journals (Sweden)

    Toshiaki Kitamura

    2011-01-01

    Full Text Available A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.

  6. Driving mechanisms of ionic polymer actuators having electric double layer capacitor structures.

    Science.gov (United States)

    Imaizumi, Satoru; Kato, Yuichi; Kokubo, Hisashi; Watanabe, Masayoshi

    2012-04-26

    Two solid polymer electrolytes, composed of a polyether-segmented polyurethaneurea (PEUU) and either a lithium salt (lithium bis(trifluoromethanesulfonyl)amide: Li[NTf2]) or a nonvolatile ionic liquid (1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)amide: [C2mim][NTf2]), were prepared in order to utilize them as ionic polymer actuators. These salts were preferentially dissolved in the polyether phases. The ionic transport mechanism of the polyethers was discussed in terms of the diffusion coefficients and ionic transference numbers of the incorporated ions, which were estimated by means of pulsed-field gradient spin-echo (PGSE) NMR. There was a distinct difference in the ionic transport properties of each polymer electrolyte owing to the difference in the magnitude of interactions between the cations and the polyether. The anionic diffusion coefficient was much faster than that of the cation in the polyether/Li[NTf2] electrolyte, whereas the cation diffused faster than the anion in the polyether/[C2mim][NTf2] electrolyte. Ionic polymer actuators, which have a solid-state electric-double-layer-capacitor (EDLC) structure, were prepared using these polymer electrolyte membranes and ubiquitous carbon materials such as activated carbon and acetylene black. On the basis of the difference in the motional direction of each actuator against applied voltages, a simple model of the actuation mechanisms was proposed by taking the difference in ionic transport properties into consideration. This model discriminated the behavior of the actuators in terms of the products of transference numbers and ionic volumes. The experimentally observed behavior of the actuators was successfully explained by this model.

  7. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

    Science.gov (United States)

    Hou, Zhao-Zhao; Wang, Gui-Lei; Xiang, Jin-Juan; Yao, Jia-Xin; Wu, Zhen-Hua; Zhang, Qing-Zhu; Yin, Hua-Xiang

    2017-08-01

    Not Available Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.

  8. Barium titanate nanocomposite capacitor FY09 year end report.

    Energy Technology Data Exchange (ETDEWEB)

    Stevens, Tyler E.; DiAntonio, Christopher Brian; Yang, Pin; Chavez, Tom P.; Winter, Michael R.; Monson, Todd C.; Roesler, Alexander William; Fellows, Benjamin D.

    2009-11-01

    This late start RTBF project started the development of barium titanate (BTO)/glass nanocomposite capacitors for future and emerging energy storage applications. The long term goal of this work is to decrease the size, weight, and cost of ceramic capacitors while increasing their reliability. Ceramic-based nanocomposites have the potential to yield materials with enhanced permittivity, breakdown strength (BDS), and reduced strain, which can increase the energy density of capacitors and increase their shot life. Composites of BTO in glass will limit grain growth during device fabrication (preserving nanoparticle grain size and enhanced properties), resulting in devices with improved density, permittivity, BDS, and shot life. BTO will eliminate the issues associated with Pb toxicity and volatility as well as the variation in energy storage vs. temperature of PZT based devices. During the last six months of FY09 this work focused on developing syntheses for BTO nanoparticles and firing profiles for sintering BTO/glass composite capacitors.

  9. Energy-Storing Structures: Composite Capacitors and Batteries

    Science.gov (United States)

    2012-07-30

    circuit board (PCB) prepreg C electrode dielectric Autoclave-processed structural capacitor • Objective: High energy density, scalable...Continued scaling (lab safety limit  100 J) – Beyond commercial FR4 prepreg  high dielectric additives, super- clean prepregging

  10. Li-Ion, Ultra-capacitor Based Hybrid Energy Module

    National Research Council Canada - National Science Library

    Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

    2007-01-01

    Ultra-capacitors in multi kilo-farad ranges are now starting to be considered as alternatives or complimentary to batteries for products ranging from toys to hybrid vehicles as well as for space applications...

  11. Fringe Capacitance of a Parallel-Plate Capacitor.

    Science.gov (United States)

    Hale, D. P.

    1978-01-01

    Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

  12. RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

    KAUST Repository

    Elshurafa, Amro M.; Emira, Ahmed; Radwan, Ahmed Gomaa; Salama, Khaled N.

    2012-01-01

    This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality

  13. Tunable fractional-order capacitor using layered ferroelectric polymers

    KAUST Repository

    Agambayev, Agamyrat; Patole, Shashikant P.; Bagci, Hakan; Salama, Khaled N.

    2017-01-01

    Pairs of various Polyvinylidene fluoride P(VDF)-based polymers are used for fabricating bilayer fractional order capacitors (FOCs). The polymer layers are constructed using a simple drop casting approach. The resulting FOC has two advantages: It can

  14. Prognostic Techniques for Capacitor Degradation and Health Monitoring

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper discusses our initial efforts in constructing physics of failure models for electrolytic capacitors subjected to electrical stressors in DC-DC power...

  15. Carbon-based fibrous EDLC capacitors and supercapacitors

    OpenAIRE

    Lekakou, C; Moudam, O; Markoulidis, F; Andrews, T; Watts, JF; Reed, GT

    2011-01-01

    This paper investigates electrochemical double-layer capacitors (EDLCs) including two alternative types of carbon-based fibrous electrodes, a carbon fibre woven fabric (CWF) and a multiwall carbon nanotube (CNT) electrode, as well as hybrid CWF-CNT electrodes. Two types of separator membranes were also considered. An organic gel electrolyte PEO-LiCIO4-EC-THF was used to maintain a high working voltage. The capacitor cells were tested in cyclic voltammetry, charge-discharge, and impedance test...

  16. Enhancement of dielectric breakdown strengths in polymer film capacitors

    International Nuclear Information System (INIS)

    Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

    1992-01-01

    This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

  17. CAPMIX -Deploying Capacitors for Salt Gradient Power Extraction

    OpenAIRE

    Bijmans, M.F.M.; Burheim, O.S.; Bryjak, M.; Delgado, A.; Hack, P.; Mantegazza, F.; Tenisson, S.; Hamelers, H.V.M.

    2012-01-01

    The process of mixing sea and river water can be utilised as a power source. At present, three groups of technology are established for doing so; i) mechanical; Pressure Retarded Osmosis PRO, ii) electrochemical reactions; Reverse ElectroDialysis (RED) and Nano Battery Electrodes (NBE) and iii) ultra capacitors; Capacitive Double Layer Expansion (CDLE) and Capacitors charge by the Donnan Potentials (CDP). The chemical potential for salt gradient power systems is only limited by th...

  18. Technology Programme

    Energy Technology Data Exchange (ETDEWEB)

    Batistoni, Paola; De Marco, Francesco; Pieroni, Leonardo [ed.

    2005-07-01

    The technology activities carried out by the Euratom-ENEA Association in the framework of the European Fusion Development Agreement concern the Next Step (International Thermonuclear Experimental Reactor - ITER), the Long-Term Programme (breeder blanket, materials, International Fusion Materials Irradiation Facility - IFMIF), Power Plant Conceptual Studies and Socio-Economic Studies. The Underlying Technology Programme was set up to complement the fusion activities as well to develop technologies with a wider range of interest. The Technology Programme mainly involves staff from the Frascati laboratories of the Fusion Technical and Scientific Unit and from the Brasimone laboratories of the Advanced Physics Technologies Unit. Other ENEA units also provide valuable contributions to the programme. ENEA is heavily engaged in component development/testing and in design and safety activities for the European Fusion Technology Programme. Although the work documented in the following covers a large range of topics that differ considerably because they concern the development of extremely complex systems, the high level of integration and coordination ensures the capability to cover the fusion system as a whole. In 2004 the most significant testing activities concerned the ITER primary beryllium-coated first wall. In the field of high-heat-flux components, an important achievement was the qualification of the process for depositing a copper liner on carbon fibre composite (CFC) hollow tiles. This new process, pre-brazed casting (PBC), allows the hot radial pressing (HRP) joining procedure to be used also for CFC-based armour monoblock divertor components. The PBC and HRP processes are candidates for the construction of the ITER divertor. In the materials field an important milestone was the commissioning of a new facility for chemical vapour infiltration/deposition, used for optimising silicon carbide composite (SiCf/SiC) components. Eight patents were deposited during 2004

  19. Technology Programme

    International Nuclear Information System (INIS)

    Batistoni, Paola; De Marco, Francesco; Pieroni, Leonardo

    2005-01-01

    The technology activities carried out by the Euratom-ENEA Association in the framework of the European Fusion Development Agreement concern the Next Step (International Thermonuclear Experimental Reactor - ITER), the Long-Term Programme (breeder blanket, materials, International Fusion Materials Irradiation Facility - IFMIF), Power Plant Conceptual Studies and Socio-Economic Studies. The Underlying Technology Programme was set up to complement the fusion activities as well to develop technologies with a wider range of interest. The Technology Programme mainly involves staff from the Frascati laboratories of the Fusion Technical and Scientific Unit and from the Brasimone laboratories of the Advanced Physics Technologies Unit. Other ENEA units also provide valuable contributions to the programme. ENEA is heavily engaged in component development/testing and in design and safety activities for the European Fusion Technology Programme. Although the work documented in the following covers a large range of topics that differ considerably because they concern the development of extremely complex systems, the high level of integration and coordination ensures the capability to cover the fusion system as a whole. In 2004 the most significant testing activities concerned the ITER primary beryllium-coated first wall. In the field of high-heat-flux components, an important achievement was the qualification of the process for depositing a copper liner on carbon fibre composite (CFC) hollow tiles. This new process, pre-brazed casting (PBC), allows the hot radial pressing (HRP) joining procedure to be used also for CFC-based armour monoblock divertor components. The PBC and HRP processes are candidates for the construction of the ITER divertor. In the materials field an important milestone was the commissioning of a new facility for chemical vapour infiltration/deposition, used for optimising silicon carbide composite (SiCf/SiC) components. Eight patents were deposited during 2004

  20. Fabrication of wound capacitors using flexible alkali-free glass

    International Nuclear Information System (INIS)

    Wilke, Rudeger H. T.; Baker, Amanda; Brown-Shaklee, Harlan; Johnson-Wilke, Raegan; Hettler, Chad

    2016-01-01

    Here, alkali-free glasses, which exhibit high energy storage densities (~35 J/cc), present a unique opportunity to couple high temperature stability with high breakdown strength, and thus provide an avenue for capacitor applications with stringent temperature and power requirements. Realizing the potential of these materials in kilovolt class capacitors with >1 J/cc recoverable energy density requires novel packaging strategies that incorporate these extremely fragile dielectrics. In this paper, we demonstrate the feasibility of fabricating wound capacitors using 50-μm-thick glass. Two capacitors were fabricated from 2.8-m-long ribbons of thin (50 μm) glass wound into 125-140-mm-diameter spools. The capacitors exhibit a capacitance of 70-75 nF with loss tangents below 1%. The wound capacitors can operate up to 1 kV and show excellent temperature stability to 150 °C. By improving the end terminations, the self-resonance can be shifted to above 1 MHz, indicating that these materials may be useful for pulsed power applications with microsecond discharge times.

  1. Physics Based Modeling and Prognostics of Electrolytic Capacitors

    Science.gov (United States)

    Kulkarni, Chetan; Ceyla, Jose R.; Biswas, Gautam; Goebel, Kai

    2012-01-01

    This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

  2. The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

    2016-01-01

    The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

  3. Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

    International Nuclear Information System (INIS)

    Yang, M; Bao, D H; Li, S W

    2013-01-01

    Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

  4. Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

    Science.gov (United States)

    2017-03-06

    WP-201317) Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-volatile Particulate Matter (PM... Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions 6. AUTHOR(S) E. Corporan, M. DeWitt, C. Klingshirn, M.D. Cheng, R. Miake-Lye, J. Peck...the performance and viability of two devices to condition aircraft turbine engine exhaust to allow the accurate measurement of total (volatile and non

  5. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi

    2016-11-23

    Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

  6. Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

    Directory of Open Access Journals (Sweden)

    Nikica Budimir

    2007-03-01

    Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

  7. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  8. Nonvolatile Memory Elements Based on the Intercalation of Organic Molecules Inside Carbon Nanotubes

    Science.gov (United States)

    Meunier, Vincent; Kalinin, Sergei V.; Sumpter, Bobby G.

    2007-02-01

    We propose a novel class of nonvolatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of an encapsulated molecule. The guest molecule has two stable orientational positions relative to the nanotube that correspond to conducting and nonconducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4TCNQ molecule encapsulated inside a metallic carbon nanotube. Our results suggest that this new type of nonvolatile memory element is robust, fatigue-free, and can operate at room temperature.

  9. Carbide Derived Carbon Super Capacitor Application

    Science.gov (United States)

    Appelgate, James; Bauer, Dave; Quirin, James; Lofland, S. E.; Hettinger, J. D.; Heon, M.; Gogotsi, Y.

    2010-02-01

    Supercapacitors can be applied into many different fields from nano-robots to high density energy storage. Growing TiC films from a know recipe and removing the transition metal element, Titanium, by chlorination leaves a carbon film that can then be applied as an electrode in a super capacitor. The problem is when the Titanium is removed from the film the stress induced by this process causes the films to fracture into isolated islands. The islands allow electrons to travel across them every easily, but there is no transfer of electrons from island to island. We present results of an investigation of a technique control the location of the fractures and use them to our benefit. Ideally, we want to create them to fracture in parallel lines. To force these fractures into straight lines we will purchase substrates with thermal SiO2 created on the surface of Si. Using an etching process we will removed a channel of SiO2 the same as the thickness of the TiC film we plan on growing. These channels will allow the fractures to form in a correlated way creating a straight line. )

  10. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

  11. Potential of Mass Spectrometry in Developing Clinical Laboratory Biomarkers of Nonvolatiles in Exhaled Breath.

    Science.gov (United States)

    Beck, Olof; Olin, Anna-Carin; Mirgorodskaya, Ekaterina

    2016-01-01

    Exhaled breath contains nonvolatile substances that are part of aerosol particles of submicrometer size. These particles are formed and exhaled as a result of normal breathing and contain material from distal airways of the respiratory system. Exhaled breath can be used to monitor biomarkers of both endogenous and exogenous origin and constitutes an attractive specimen for medical investigations. This review summarizes the present status regarding potential biomarkers of nonvolatile compounds in exhaled breath. The field of exhaled breath condensate is briefly reviewed, together with more recent work on more selective collection procedures for exhaled particles. The relation of these particles to the surfactant in the terminal parts of the respiratory system is described. The literature on potential endogenous low molecular weight compounds as well as protein biomarkers is reviewed. The possibility to measure exposure to therapeutic and abused drugs is demonstrated. Finally, the potential future role and importance of mass spectrometry is discussed. Nonvolatile compounds exit the lung as aerosol particles that can be sampled easily and selectively. The clinical applications of potential biomarkers in exhaled breath comprise diagnosis of disease, monitoring of disease progress, monitoring of drug therapy, and toxicological investigations. © 2015 American Association for Clinical Chemistry.

  12. Stable isotopic carbon composition of apples and their subfractions--juice, seeds, sugars, and nonvolatile acids.

    Science.gov (United States)

    Lee, H S; Wrolstad, R E

    1988-01-01

    The 13C:12C ratios of 8 authentic apple juice samples and their subfractions were determined by mass spectrometry. Apples from Argentina, Mexico, New Zealand, and the United States were processed into juice; pulp was collected from the milled fruit and seeds were collected from the press-cake. Sugars, nonvolatile acids, and phenolics were isolated from the juice by treatment with ion-exchange resins and polyvinylpyrrolidone (PVPP). The mean value for all juice samples was -24.2% which is close to the values reported by other investigators. Juice from apples grown in Argentina, Mexico, and New Zealand did not differ from U.S. samples. The isotopic composition of the subfractions ranged from -22.0 to -31.0%. The values for the pulp were essentially the same as for juice. The sugar fraction was slightly less negative than the juice; the nonvolatile acid and phenolic fractions were more negative. The levels of nonvolatile acids and phenolics in apple juice are low, however, so these compounds contribute little to overall delta 13C values in juice.

  13. Evaluation of reinitialization-free nonvolatile computer systems for energy-harvesting Internet of things applications

    Science.gov (United States)

    Onizawa, Naoya; Tamakoshi, Akira; Hanyu, Takahiro

    2017-08-01

    In this paper, reinitialization-free nonvolatile computer systems are designed and evaluated for energy-harvesting Internet of things (IoT) applications. In energy-harvesting applications, as power supplies generated from renewable power sources cause frequent power failures, data processed need to be backed up when power failures occur. Unless data are safely backed up before power supplies diminish, reinitialization processes are required when power supplies are recovered, which results in low energy efficiencies and slow operations. Using nonvolatile devices in processors and memories can realize a faster backup than a conventional volatile computer system, leading to a higher energy efficiency. To evaluate the energy efficiency upon frequent power failures, typical computer systems including processors and memories are designed using 90 nm CMOS or CMOS/magnetic tunnel junction (MTJ) technologies. Nonvolatile ARM Cortex-M0 processors with 4 kB MRAMs are evaluated using a typical computing benchmark program, Dhrystone, which shows a few order-of-magnitude reductions in energy in comparison with a volatile processor with SRAM.

  14. Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

    Institute of Scientific and Technical Information of China (English)

    Young; Tea; Chun; Daping; Chu

    2015-01-01

    Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

  15. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  16. Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

    Directory of Open Access Journals (Sweden)

    M. S. T. Barroso

    2011-06-01

    Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

  17. Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2013-12-01

    Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  18. BioCapacitor: A novel principle for biosensors.

    Science.gov (United States)

    Sode, Koji; Yamazaki, Tomohiko; Lee, Inyoung; Hanashi, Takuya; Tsugawa, Wakako

    2016-02-15

    Studies regarding biofuel cells utilizing biocatalysts such as enzymes and microorganisms as electrocatalysts have been vigorously conducted over the last two decades. Because of their environmental safety and sustainability, biofuel cells are expected to be used as clean power generators. Among several principles of biofuel cells, enzyme fuel cells have attracted significant attention for their use as alternative energy sources for future implantable devices, such as implantable insulin pumps and glucose sensors in artificial pancreas and pacemakers. However, the inherent issue of the biofuel cell principle is the low power of a single biofuel cell. The theoretical voltage of biofuel cells is limited by the redox potential of cofactors and/or mediators employed in the anode and cathode, which are inadequate for operating any devices used for biomedical application. These limitations inspired us to develop a novel biodevice based on an enzyme fuel cell that generates sufficient stable power to operate electric devices, designated "BioCapacitor." To increase voltage, the enzyme fuel cell is connected to a charge pump. To obtain a sufficient power and voltage to operate an electric device, a capacitor is used to store the potential generated by the charge pump. Using the combination of a charge pump and capacitor with an enzyme fuel cell, high voltages with sufficient temporary currents to operate an electric device were generated without changing the design and construction of the enzyme fuel cell. In this review, the BioCapacitor principle is described. The three different representative categories of biodevices employing the BioCapacitor principle are introduced. Further, the recent challenges in the developments of self-powered stand-alone biodevices employing enzyme fuel cells combined with charge pumps and capacitors are introduced. Finally, the future prospects of biodevices employing the BioCapacitor principle are addressed. Copyright © 2015 The Authors

  19. The design and implementation of on-line monitoring system for UHV compact shunt capacitors

    Science.gov (United States)

    Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

    2017-08-01

    Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

  20. Degradation Effect on Reliability Evaluation of Aluminum Electrolytic Capacitor in Backup Power Converter

    DEFF Research Database (Denmark)

    Zhou, Dao; Wang, Huai; Blaabjerg, Frede

    2017-01-01

    DC capacitors in power electronic converters are a major constraint on improvement of power density as well as reliability. In this paper, according to the degradation data of electrolytic capacitors through the accelerated test, the time-to-failure of the capacitor cell is acquired and it can...... be further extended to lower stress levels. Then, in a case study of a fuel cell backup power application, the mission profile based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in terms of the standby mode and operation mode. The lifetime prediction of the capacitor...

  1. Physical principles and current status of emerging non-volatile solid state memories

    Science.gov (United States)

    Wang, L.; Yang, C.-H.; Wen, J.

    2015-07-01

    Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

  2. ISOLDE PROGRAMME

    CERN Multimedia

    Fedosseev, V; Herfurth, F; Scheidenberger, C; Geppert, C; Gorges, C; Ratajczyk, T; Wiederhold, J C; Vogel, S; Munch, M K; Nieminen, P; Pakarinen, J J A; Lecesne, N; Bouzomita, H; Grinyer, J; Marques moreno, F M; Parlog, M; Blank, B A; Pedroza, J; Ghetta, V; Lozeva, R; Zacarias, S M; Guillemaud mueller, D S; Cottereau, E; Cheikh mhamed, M; Tusseau nenez, S; Tungate, G; Walker, P M; Smith, A G; Fitzpatrick, C; Dominik, W M; Karny, M; Ciemny, A A; Nyman, G H; Thies, R M A; Lindberg, S K G; Langouche, G F; Velten, P; Araujo escalona, V I; Boudreau, M; Domnanich, K A; Richter, D; Lutter, R J; Javaji, A; Engel, R Y; Wiehr, S; Nacher gonzalez, E; Jungclaus, A; Ribeiro jimenez, G; Marroquin alonso, I; Cal gonzalez, J; Paziy, V; Salsac, M; Murphy, C; Podolyak, Z F; Bajoga, A D; Butler, P; Pritchard, A; Colosimo, S J; Steer, A N; Fox, S P; Wadsworth, B A; Truesdale, V L; Al monthery, M; Bracco, A; Guttormsen, M S; Badea, M N; Calinescu, S; Ujeniuc, S; Cederkall, J A; Zemlyanoy, S; Donets, E D; Golovkov, M; Schweitzer, D K; Vranicar, A; Harrichunder, S; Ncube, M; Nannini, A; Strisovska, J; Wolf, E; Gerten, R F; Lehnert, J; Rainovski, G I; Pospisil, S; Datta pramanik, U; Benzoni, G; Fedorov, D; Maier, F M; Bonanni, A; Pfeiffer, B; Griesel, T; Wehner, L W; Mikkelsen, M; Recchia, F; Lenzi, S M; Smith, J F; Kelly, C M; Acosta sanchez, L A; Chavez lomeli, E R; De melo bandeira tavares, P M; Vieira, J M; Martins da silva, M A; Lima lopes, A M; Lopes leal, T J; Mader, J; Kessler, P; Laurent, B G; Schweikhard, L C; Marx, G H; Kulczycka, E; Komorowska, M; Da silva, M F; Goncalves marques, C P; Baptista peres, M A; Welander, J E; Reiter, P; Miller, C; Martin sanchez-cano, D; Wiens, A; Blazhev, A A; Braun, N; Cappellazzo, M V; Birkenbach, B; Gerst, R; Dannhoff, M F; Sithole, M J; Bilgier, B; Nardelli, S; Araujo mendes, C M; Agramunt ros, J; Valencia marin, E; Pantea, E; Hessberger, F P; Leduc, A J; Mitsuoka, S; Carbonari, A W; Buchegger, F J; Garzon camacho, A; Dapo, H; Papka, P; Stachura, M K; Stora, T; Marsh, B A; Thiboud, J A; Heylen, H; Antalic, S; Stahl, C; Bauer, C; Thurauf, M; Maass, B; Sturm, S; Boehm, C; Wolf, N R; Ways, M; Steinsberger, T P; Riisager, K; Ruotsalainen, P A; Bastin, B; Duval, F T; Penessot, G; Flechard, X D; Desrues, P; Giovinazzo, J; Kurtukian nieto, T; Ascher, P E L; Roccia, S; Matea, I; Croizet, H A G; Bonnin, C M; Morfouace, P; Smith, A J; Guin, R; Banerjee, D; Gunnlaugsson, H P; Ohtsubo, T; Zhukov, M V; Tengborn, E A; Welker, A; Giannopoulos, E; Dessagne, P; Juscamaita vivanco, Y; Da costa pereira, L M; Hustings, J; Yu, H; Kruecken, R; Nowak, A K; Jankowski, M; Cano ott, D; Galve lahoz, P; Murphy, A S J; Shand, C M; Jones, G D; Herzberg, R; Ikin, P; Revill, J P; Everett, C; Napoli, D R; Scarel, G; Larsen, A; Tornyi, T G; Pascu, S G; Stroe, L; Toma, S; Jansson, K; Dronjak fahlander, M; Krupko, S; Hurst, A M; Veskovic, M; Nikolov, J; Masenda, H; Sibanda, W N; Rocchini, M; Klimo, J; Deicher, M; Wichert, T; Kronenberg, J; Helmke, A; Meliani, Z; Ivanov, V S; Green, B L; Keatings, J M; Kuti, I; Halasz, Z; Henry, M O; Bras de sequeira amaral, V; Espirito santo, F; Da silva, D J; Rosendahl, S; Vianden, R J; Speidel, K; Agarwal, I; Faul, T; Kownacki, J M; Martins correia, J G; Lorenz, K; Costa miranda, S M; Granadeiro costa, A R; Zyabkin, D; Kotthaus, T; Pfeiffer, M; Gironi, L; Jensen, A; Romstedt, F; Constantino silva furtado, I; Heredia cardona, J A; Jordan martin, M D; Montaner piza, A; Zacate, M O; Plewinski, F; Mesli, A; Akakpo, E H; Pichard, A; Hergemoller, F; Neu, W; Fallis starhunter, J P; Voulot, D; Mrazek, J; Ugryumov, V; Savreux, R P; Kojouharov, I M; Kern, R O; Papst, O; Fitting, J; Lauer, M; Kirsebom, O S; Jensen, K L; Jokinen, A; Rahkila, P J; Hager, U D K; Konki, J P; Dubois, M; Orr, N A; Fabian, X; Huikari, J E; Goigoux, T; Magron, C; Zakari, A A; Maietta, M; Bachelet, C E M; Roussiere, B; Li, R; Canavan, R L; Lorfing, C; Foster, R M; Gislason, H P; Shayestehaminzadeh, S; Qi, B; Mukai, M; Watanabe, Y; Willmann, L; Kurcewicz, W; Wimmer, K; Meisel, Z P; Dorvaux, O; Nowacki, F; Koudriavtsev, I; Lievens, P; Delaure, B J P; Neyens, G; Ceruti, S; Bunka, M; Vermeulen, C; Umbricht, C A; De boer, J; Podadera aliseda, I; Alcorta moreno, M; Pesudo fortes, V; Zielinska, M; Korten, W; Wang, C H; Lotay, G J; Mason, P; Rice, S J; Regan, P H; Willenegger, L M; Andreev, A; Yavuzkanat, N; Hass, M; Kumar, V; Valiente dobon, J J; Crespo campo, L; Zamfir, N - V; Deleanu, D; Clisu, C; Jeppesen, H B; Wu, C; Pain, S D; Stracener, D W; Wuosmaa, A H; Szilner, S; Colovic, P; Matousek, V; Venhart, M; Birova, M; Li, X; Stuchbery, A E; Lellep, G M; Chakraborty, S; Leoni, S; Chupp, T; Yilmaz, C; Severin, G; Garcia ramos, J E; Newton, M E; Hadinia, B; Mc glynn, E; Monteiro de sena silvares de carvalho, I; Friedag, P; Figuera, P; Koos, V; Meot, V H; Pauwels, D B; Jancso, A; Srebrny, J; Alves, E J; David bosne, E; Bengtsson, L; Kalkuehler, M; Albers, M; Bharuth-ram, K; Akkus, B; Hemmingsen, L B S; Pedersen, J T; Dos santos redondo, L M; Rubio barroso, B; Algora, A; Kozlov, V; Mavela, D L; Mokhles gerami, A; Keeley, N; Bernardo da silva, E; Unzueta solozabal, I; Schell, J; Szybowicz, M; Yang, X; Plavec, J; Lassen, J; Johnston, K; Coquard, L; Bloch, T P; Bonig, E S; Stegmann, R; Ignatov, A; Paschalis, S; Fernandez martinez, G; Schilling, M; Habermann, T; Von hahn, R; Minaya ramirez, E E; Moore, I D; Wang, Y; Saastamoinen, A J; Grahn, T; Herzan, A; Stolze, S M; Clement, E; Dijon, A; Shornikov, A; Lienard, E; Gibelin, J D; Pain, C; Canchel, G; Simpson, G S; Latrasse, L P; Huang, W; Forest, D H; Billowes, J; Flanagan, K; Strashnov, I; Binnersley, C L; Sanchez poncela, M; Simpson, J; Morrall, P S; Grant, A F; Charisopoulos, S; Lagogiannis, A; Bhattacharya, C; Olafsson, S; Stepaniuk, M; Tornqvist, H T; Heinz, A M; White iv, E R; Courtin, S; Marechal, F; Da silva fenta, A E; De lemos lima, T A; Stryjczyk, M; Dockx, K; Haller, S; Rizzi, M; Reichert, S B; Bonn, J; Thirolf, P G; Garcia rios, A R; Gugliermina, V M; Cubero campos, M A; Sanchez tembleque, V; Benito garcia, J; Senoville, M; Mountford, D J; Gelletly, W; Alharbi, T S T; Wilson, E; Rigby, S V; Andreoiu, C; Paul, E S; Harkness, L J; Judson, D S; Wraith, C; Van esbroeck, K; Wadsworth, R; Cubiss, J G; Harding, R D; Vaintraub, S; Mandal, S K; Scarpa, D; Hoff, P; Syed naeemul, H; Borcea, R; Balabanski, D L; Marginean, R; Rotaru, F; Rudolph, D; Fahlander, C H; Chudoba, V; Kay, B P; Soic, N; Naidoo, D; Veselsky, M; Kliman, J; Raisanen, J A; Dietrich, M; Maung maung than, M M T; Reed, M W; Danchev, M T; Ray, J; Roy, M; Hammen, M; Capponi, L; Veghne csatlos, M M; Fryar, J; Mirzadeh vaghefi, S P; Trindade pereira, A M; De pinho oliveira, G N; Bakenecker, A; Tramm, C; Germic, V; Morel, P A; Kowalczyk, M; Matejska-minda, M; Wolinska-cichocka, M; Ringvall moberg, A; Mantovan, R; Fransen, C H; Radeck, F; Schneiders, D W; Steinbach, T; Vibenholt, J E; Magnussen, M J; Stevnhoved, H M; Comas lijachev, V; Dasenbrock-gammon, N M; Perkowski, J; O'neill, G G; Matveev, Y; Wegner, M; Liu, Z; Perez alvarez, T; Cerato, L; Radchenko, V; Molholt, T E; Tabares giraldo, J A; Srnka, D; Dlouhy, Z; Beck, D; Werner, V R; Homm, I; Eliseev, S; Blaum, K; Probst, M B; Kaiser, C J; Martin, J A; Refsgaard, J; Peura, P J; Greenlees, P T; Auranen, K; Delahaye, P; Traykov, E K; Perez loureiro, D; Mery, A A; Couratin, C; Tsekhanovich, I; Lunney, D; Gaulard, C V; Mottram, A D; Cullen, D M; Das, S K; Van de walle, J; Mazzocchi, C; Jonson, B N G; Woehr, A; Lesher, S R; Zuber, K T; Filippin, L; De witte, H J; Van den bergh, P A M; Raabe, R; Dirkx, D; Parnefjord gustafsson, F O A; Dunlop, R A; Tarasava, K; Gernhaeuser, R A; Weinzierl, W; Berger, C; Wendt, K; Achtzehn, T; Gottwald, T; Schug, M; Rossel, R E; Dominguez reyes, R R; Fraile prieto, L M; Briz monago, J A; Koester, U H; Bunce, M R; Bowry, M D; Nakhostin, M; Shearman, R; Cresswell, J R; Joss, D T; Gredley, A; Groombridge, D; Laird, A M; Aslanoglou, X; Siem, S; Weterings, J A; Renstrom, T; Szpak, B T; Luczkowski, M J; Ghita, D; Bezbakh, A; Soltz, R A; Bollmann, J; Bhattacharya, P; Roy, S; Rahaman, M A; Wlodarski, T; Carvalho soares, J; Barzakh, A; Schertz, F; Froemmgen, N E; Liberati, V; Foy, B E; Baptista barbosa, M; Weinheimer, C P; Zboril, M; Simon, R E; Popescu, L A; Czosnyka, T; Miranda jana, P A; Leimbach, D; Naskrecki, R; Plociennik, W A; Ruchowska, E E; Chiara, C J; Walters, W; Eberth, J H; Thomas, T; Thole, P; Queiser, M T; Lo bianco, G; D'amico, F; Muller, S; Sanchez alarcon, R M; Tain enriquez, J L; Orrigo, S E A; Orlandi, R; Masango, S; Plazaola muguruza, F C; Lepareur, N G; Fiebig, J M; Ceylan, N; Wildner, E; Kowalska, M; Malbrunot, S; Garcia ruiz, R F; Pallada, S; Slezak, M; Roeckl, E; Schrieder, G H; Ilieva, S K; Koenig, K L; Amoretti, M A; Lommen, J M; Fynbo, H O U; Weyer, G O P; Koldste, G T; Madsboll, K; Jensen, J H; Nieminen, A M; Reponen, M; Villari, A; Thomas, J; Saint-laurent, M; Sorlin, O H; Carniol, B; Pereira lopez, J; Grevy, S; Plaisir, C; Marie-jeanne, M J; Georgiev, G P; Etile, A M; Le blanc, F M; Verney, D; Stefan, G I; Assie, M; Suzuki, D; Guillot, J; Vazquez rodriguez, L; Campbell, P; Deacon, A N; Ware, T; Flueras, A; Xie, L; Banerjee, K; Piersa, M; Galaviz redondo, D; Johansson, H T; Schwarz, S; Toysa, A S; Aumont, J; Van duppen, P L E; Atanasov, D; Zadvornaya, A; Renaud, M A; Xu, Z; Garrett, P E; Rapisarda, E; Reber, J A; Mattolat, C F; Raeder, S; Habs, D; Vidal, M; Perez liva, M; Calvo portela, P; Ulla pedrera, F J; Wood, R T; Lalkovski, S; Page, R; Petri, M; Barton, C J; Nichols, A J; Vermeulen, M J; Bloor, D M; Henderson, J; Wilson, G L; De angelis, G; Buerger, A; Modamio hoybjor, V; Klintefjord, M L; Ingeberg, V W; Fornal, B A; Marginean, R; Sava, T; Kusoglu, A; Suvaila, R; Lica, R; Costache, C; Mihai, R; Ionescu, A; Baeck, T M; Hoffman, C R; Sedlak, M; Koskelo, O K; Kyaw myat, K M; Gladnishki, K A; Ganguly, B; Goncalves marques, J; Cardoso, S; Seliverstov, M; Niessen, B D; Gutt, L E; Chapman, R; Spagnoletti, P N; Lopes, C; De oliveira amorim, C; Batista lopes, C M; Araujo, J; Schielke, S J; Daugas, J R; Gaudefroy, L; Chevrier, R; Szunyogh, D M; Napiorkowski, P J; Wrzosek-lipska, K; Wahl, U; Catarino, N; Pereira carvalho alves de sequeira, M; Hess, H E; Holler, A; Bettermann, L; Geibel, K; Taprogge, J; Lewandowski, L T N; Manchado de sola, F; Cakirli mutlu, R B; Das gupta, S; Thulstrup, P W; Heinz, U; Nogwanya, T; Neidherr, D M; Morales lopez, A I; Gumenyuk, O; Peaker, A R; Wakabayashi, Y; Abrahams, K J; Martin montes, E J; Mach, H A; Souza ribeiro junior, I; He, J; Chalil, A; Xing, R; Dos santos augusto, R M; Giles, T J; Dorsival, A; Trujillo hernandez, J S; Kalaninova, Z; Andel, B; Venos, D; Kraemer, J; Saha, S; Neugart, R; Eronen, T O; Kreim, K D; Heck, M K; Goncharov, M; Karthein, J; Julin, R J; Eleon, C; Achouri, N L; Grinyer, G F; Fontbonne, C M; Alfaurt, P; Lynch, K M; Wilkins, S G; Brown, A R; Imai, N; Pomorski, M J; Janiak, L; Nilsson, T; Stroke, H H; Stanja, J; Dangelser, E; Heenen, P; Godefroid, M; Mallion, S N; Gins, W A M; Stegemann, S T; Koszorus, A; Mcnulty, J F; Lin, P; Ohlert, C M; Schwerdtfeger, W; Tengblad, O; Becerril reyes, A D; Perea martinez, A; Martinez perez, M C; Margerin, V; Rudigier, M; Alexander, T D; Patel, Z V; Hammond, N; Wearing, F; Patel, A; Jenkins, D G; Corradi, L; Galtarossa, F; Debernardi, A; Giacoppo, F; Tveten, G M; Malatji, K L; Krolas, W A; Stanoiu, M A; Rickert, E U; Ter-akopian, G; Cline, D; Riihimaeki, I A; Simon, K D; Wagner, F E; Turker, M; Neef, M H; Coombes, B J; Jakubek, J; Vagena, E; Bottoni, S; Nishimura, K; Correia, J; Rodrigues valdrez, C J; Molkanov, P; Adhikari, R; Ostrowski, A N; Hallmann, O; Scheck, M; Wady, P T; Lane, J; Krasznahorkay, A J; Kunne sohler, D; Meaney, A J; Hochschulz, F; Roig, O; Behan, C C; Kargoll, S; Kemnitz, S; Carvalho teixeira, R C; Redondo cubero, A; Tallarida, G; Kaczarowski, R; Finke, F; Linnemann, A; Altenkirch, R; Saed-samii, N; Ansari, S H; Dlamini, W B; Adoons, V N; Ronning, C R; Wiedeking, M; Herlert, A J; Mehl, C V; Judge, S M; Gaertner, D; Divinskyi, S; Karabasov, M O; Zagoraios, G; Boztosun, I; Van zyl, J J; Catherall, R; Lettry, J; Wenander, F J C; Zakoucky, D; Catchen, G L; Noertershaeuser, W; Kroell, T; Leske, J; Shubina, D; Murray, I M; Pancin, J; Delaunay, F; Poincheval, J J L; Audirac, L L; Gerbaux, M T; Aouadi, M; Sole, P G P; Fallot, M P; Onillon, A; Duchemin, C; Formento cavaier, R; Audi, G; Boukhari, A; Lau, C; Martin, J A; Barre, N H; Berry, T A; Procter, T J; Bladen, L K; Axiotis, M; Muto, S; Jeong, S C; Hirayama, Y; Korgul, A B; Minamisono, K; Bingham, C R; Aprahamian, A; Bucher, B M; Severijns, N; Huyse, M L; Ferrer garcia, R; Verlinde, M N S; Romano, N; Maugeri, E A; Klupp, S C; Dehn, M H; Heinke, R M; Naubereit, P; Maira vidal, A; Vedia fernandez, M V; Ibanez garcia, P B; Bruyneel, B J E; Materna, T; Hadynska-klek, K; Al-dahan, N; Alazemi, N; Carroll, R J; Babcock, C; Patronis, N; Eleme, Z; Dhal, A; Sahin, E; Goergen, A; Maj, A; Bednarczyk, P A; Borcea, C; Negoita, F; Suliman, G; Marginean, N M; Sotty, C O; Negret, A L; Nae, S A; Nita, C; Golubev, P I; Knyazev, A; Jost, C U; Petrik, K; Vaeyrynen, S A; Dracoulis, G D; Uher, J; Fernandez dominguez, B; Chakraborty, P; Avigo, R; Falahat, S; Lekovic, F; Dorrer, H J; Mengoni, D; Derkx, X; Angus, L J; Sandhu, K S; Gregor, E; Kelly, N A; Byrne, D J; Haas, H; Lourenco, A A; Sousa pereira, S M; Sousa, J B; De melo mendonca, T M; Tavares de sousa, C; Guerreiro dos santos oliveira custodio, L M; Da rocha rodrigues, P M; Yamaguchi, T; Thompson, P C; Rosenbusch, M; Wienholtz, F; Fischer, P; Iwanicki, J S; Rusek, K M; Hanstorp, D; Vetter, U; Wolak, J M; Park, S H; Warr, N V; Doornenbal, P C; Imig, A; Seidlitz, M; Moschner, K; Vogt, A; Kaya, L; Martel bravo, I; Orduz, A K; Serot, O; Majola, S N; Litvinov, Y; Bommert, M; Hensel, S; Markevich, V; Nishio, K; Ota, S; Matos, I; Zenkevich, A; Picado sandi, E; Forstner, O; Hu, B; Ntshangase, S S; Sanchez-segovia, J

    2002-01-01

    The experiments aim at a broad exploration of the properties of atomic nuclei far away from the region of beta stability. Furthermore, the unique radioactive beams of over 60~elements produced at the on-line isotope separators ISOLDE-2 and ISOLDE-3 are used in a wide programme of atomic, solid state and surface physics. Around 300 scientists are involved in the project, coming from about 70 laboratories. \\\\ \\\\ The electromagnetic isotope separators are connected on-line with their production targets in the extracted 600 MeV proton or 910~MeV Helium-3 beam of the Synchro-Cyclotron. Secondary beams of radioactive isotopes are available at the facility in intensities of 10$^1

  3. Spheromak Buildup in SSPX using a Modular Capacitor Bank

    International Nuclear Information System (INIS)

    Wood, R D; McLean, H S; Hill, D N; Hooper, E B; Romero-Talamas, C A

    2006-01-01

    The Sustained Spheromak Physics Experiment (SSPX) [1] was designed to address both magnetic field generation and confinement. The SSPX produces 1.5-3.5msec, spheromak plasmas with a 0.33m major radius and a minor radius of ∼0.23m. DC coaxial helicity injection is used to build and sustain the spheromak plasma within the flux conserver. Optimal operation is obtained by flattening the profile of λ = μ 0 j/B, consistent with reducing the drive for tearing and other MHD modes, and matching of edge current and bias flux to minimize |(delta)B/B| rms . With these optimizations, spheromak plasmas with central T e >350eV and β e ∼ 5% with toroidal fields of 0.6T [3] have been obtained. If a favorable balance between current drive efficiency and energy confinement can be shown, the spheromak has the potential to yield an attractive magnetic fusion concept [4]. The original SSPX power system consists of two lumped-circuit capacitor banks with fixed circuit parameters. This power system is used to produce an initial fast formation current pulse (10kV, 0.5MJ formation bank), followed by a lower current, 3.5ms flattop sustainment pulse (5kV, 1.5MJ sustainment bank). Experimental results indicate that a variety of injected current pulses, such as a longer sustainment flattop [5], higher and longer fast formation [6], and multiple current pulses [7], might further our understanding of magnetic field generation. Although the formation bank can be split into two independent banks capable of producing other injected current waveforms, the variety of current waveforms produced by this power system is limited. Thus, to extend the operating range of the SSPX, a new pulsed-power system has been designed and partially constructed. In this paper, we discuss the design of the programmable bank and present first results from using the bank to increase the magnetic field in SSPX

  4. Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

    Science.gov (United States)

    Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

    2014-11-26

    Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

  5. Comparison of MOS capacitor and transistor postirradiation response

    International Nuclear Information System (INIS)

    McWhorter, P.J.; Fleetwood, D.M.; Pastorek, R.A.; Zimmerman, G.T.

    1989-01-01

    The postirradiation response of MOS capacitors and transistors fabricated on the same chip has been examined as a function of dose and anneal bias. A variety of analysis techniques are used to evaluate the postirradiation response of these structures, including low and high frequency capacitance-voltage techniques, subthreshold current-voltage techniques, and charge pumping. Though there are changes in the postirradiation energy spectrum of ΔD it , no clear evidence of defect transformation is observed on transistors or capacitors under any conditions examined. Postirradiation response at 80 degrees C is found to be similar in the two structures for low levels of damage (100 krad). For both structures, interface-trap densities continue to grow following irradiation under these conditions. In contrast, the postirradiation response of capacitors and transistors can differ qualitatively at higher levels of damage (1 Mrad), with interface-traps increasing postirradiation at 80 degrees C for transistors and annealing for capacitors. These results indicate that capacitor structures may not be suitable for hardness assurance studies that involve elevated temperature irradiations or postirradiation anneals

  6. Graphene-Based Flexible and Transparent Tunable Capacitors.

    Science.gov (United States)

    Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

    2015-12-01

    We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

  7. Study of electric capacitors using Finite Element Method

    Directory of Open Access Journals (Sweden)

    Alina Neamț

    2012-12-01

    Full Text Available A capacitor is made of two armatures and a dielectric between the two armatures. In this paper, we are going to study the plane capacitor , which is made of two equal metal armatures, plane and parallel, having the S surface, situated at a distance d much shorter than the armatures dimensions, between which there is a liniar, homogenous and isotropic dielectric having a constant electrical permittivity.The purpose of studying the plane capacitor, through MEF, presented in this paper,is to establish the stress to which the dielectrics may be subject to, in daily practice, and the influence that their superposition in an electric field has, on each of them. The study of the plane capacitor , finalised with observations on the raise of the dependence of the electric field intensity in air on the size of the air layer and having as parameter the type of dielectric material introduced between the armatures, is an example of confirmation or invalidation of the possibility and utility of using layers of dielectrics between the armatures of the capacitors.

  8. Application of proton conducting polymeric electrolytes to electrochemical capacitors

    International Nuclear Information System (INIS)

    Morita, Masayuki; Qiao, Jin-Li; Yoshimoto, Nobuko; Ishikawa, Masashi

    2004-01-01

    Non-aqueous polymeric gel complexes composed of poly(ethylene oxide)-modified polymethacrylate (PEO-PMA) dissolving anhydrous H 3 PO 4 have been examined as solid electrolytes of electrochemical capacitors. High ionic conductivity of ∼10 -3 S cm -1 (at 70 deg. C) was obtained for non-aqueous gel systems based on PEO-PMA with proper amounts of organic plasticizers. The ionic conductivity depended on the composition of the gel, especially on the content of the dopant H 3 PO 4 . A test cell of the electric double layer capacitor (EDLC) was assembled using the present gel electrolyte with activated carbon fiber (ACF) cloth electrodes. It gave as high capacity as that obtained for the capacitor using an aqueous liquid electrolyte. High rate capability was obtained for the cell operating at 90 deg. C

  9. High Voltage Homemade Capacitor Charger for Plasma Focus System

    International Nuclear Information System (INIS)

    Abdul Halim Baijan; Azaman Ahmad; Rokiah Mohd Sabri; Siti Aiasah Hashim; Mohd Rizal Md Chulan; Wah, L.K.; Azhar Ahmad; Rosli Che Ros; Mohd Faiz Mohd Zin

    2015-01-01

    A high voltage capacitor charger has been designed and built to replace a high voltage charger type General Atomics CCDs Power Supply which was damaged. The fabrication design was using materials which were easily available in the local market. Among the main components of the high-voltage charger is a transformer for neon lights, variable transformer rated 0 - 240 V 1 KVA, and 240 V transformer isolator. The results of experiments that have been conducted shows that a homemade capacitor charger was able to charge high voltage capacitors up to the required voltage of which was 12 kV. However the time taken for charging is quite long, up to more than 6 minutes. (author)

  10. Gamma radiation in ceramic capacitors: a study for space missions

    Science.gov (United States)

    dos Santos Ferreira, Eduardo; Sarango Souza, Juliana

    2017-10-01

    We studied the real time effects of the gamma radiation in ceramic capacitors, in order to evaluate the effects of cosmic radiation on these devices. Space missions have electronic circuits with various types of devices, many studies have been done on semiconductor devices exposed to gamma radiation, but almost no studies for passive components, in particular ceramic capacitors. Commercially sold ceramic capacitors were exposed to gamma radiation, and the capacitance was measured before and after exposure. The results clearly show that the capacitance decreases with exposure to gamma radiation. We confirmed this observation in a real time capacitance measurement, obtained using a data logging system developed by us using the open source Arduino platform.

  11. Thyristor-controlled reactor improves series capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Renz, K.W.; Thumm, G.; Weiss, S. [Siemens AG, Erlangen (Germany)

    1995-12-31

    Environmental considerations make it more and more difficult to plan and erect new transmission lines. FACTS (Flexible AC Transmission Systems) technology can provide devices to improve the utility of AC transmission lines. The innovative combination of conventional fixed series capacitors and thyristor controlled reactors as a new FACTS device was introduced into a transmission system in 1992. This Advanced Series Compensation (ASC) system provides many advantages not available with conventional fixed series capacitor installations such as flexible direct and continuous control of the compensation level, direct and smooth power flow control and improved capacitor bank protection. This new technology offers enhanced system flexibility by control of transmission line overload conditions, reduction in fault currents, sub-synchronous resonance (SSR) mitigation and network power oscillation damping. The world-first three-phase installation at Kayenta Substation, USA, demonstrates that modern FACTS devices using SVC thyristor valve technology can be designed and operated successfully. 6 refs, 7 figs

  12. PLZT capacitor and method to increase the dielectric constant

    Science.gov (United States)

    Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

    2017-12-12

    A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

  13. Characterization system for research on energy storage capacitors

    Science.gov (United States)

    Noriega, J. R.; Iyore, O. D.; Budime, C.; Gnade, B.; Vasselli, J.

    2013-05-01

    In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

  14. Discontinuous Galerkin Time-Domain Analysis of Power-Ground Planes Taking Into Account Decoupling Capacitors

    KAUST Repository

    Li, Ping; Jiang, Li Jun; Bagci, Hakan

    2017-01-01

    In this paper, a discontinuous Galerkin time-domain (DGTD) method is developed to analyze the power-ground planes taking into account the decoupling capacitors. In the presence of decoupling capacitors, the whole physical system can be split

  15. Infant-mortality testing of high-energy-density capacitors used on Nova

    International Nuclear Information System (INIS)

    Merritt, B.T.; Whitham, K.

    1983-01-01

    Nova is a solid-state large laser for inertial-confinement fusion research. Its flashlamps are driven by a 60-MJ capacitor bank. Part of this bank is being built with high-energy-density capacitors, 52-μF, 22 kV, 12.5 kJ. A total of 2645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant-mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection

  16. Infant mortality testing of high energy-density capacitors used on Nova

    International Nuclear Information System (INIS)

    Merritt, B.T.; Whitham, K.

    1983-01-01

    Nova is a solid state large laser for inertial confinement fusion research. Its flashlamps are driven by a 60 MJ capacitor bank. Part of this bank is being built with high energy-density capacitors, 52 μF, 22 KV, 12.5 KJ. A total of 2,645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection. The test results were remarkably good. Less than 0.5 percent failed the pulse-discharge test and less than 2.5 percent were rejected overall

  17. Reliability Modeling Development and Its Applications for Ceramic Capacitors with Base-Metal Electrodes (BMEs)

    Science.gov (United States)

    Liu, Donhang

    2014-01-01

    This presentation includes a summary of NEPP-funded deliverables for the Base-Metal Electrodes (BMEs) capacitor task, development of a general reliability model for BME capacitors, and a summary and future work.

  18. Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

    Science.gov (United States)

    Liu, David (Donhang); Sampson, Michael J.

    2011-01-01

    Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the

  19. Technology programme

    International Nuclear Information System (INIS)

    2007-01-01

    The technology activities carried out by the EURATOM-ENEA Association concern the continuation of the European Fusion Development Agreement (EFDA) as well as the ITER activities coordinated by the ITER International Office and Fusion for Energy. Also included in the activities are design and RD under the Broader Approach Agreement between the EU and Japan. In order to better contribute to the programme a number of consortium agreements among the Associations are being signed. Collaboration with industries in view of their participation in the construction of ITER was further strengthened, mainly in the field of magnet and divertor components. The new European Test Blanket Facility at ENEA Brasimone was completed; the design of the ITER radial neutron camera was optimised and the performance achievable with the in-vessel viewing system was further assessed by experimental trials. Design activities for the JT-60SA magnet and power supply system as well as the design and experimental activities related to the target of the International Fusion Materials Irradiation Facility were continued. Significant work was done to define quality assurance for neutronics analyses. Mockups of the ITER pre-compression ring made in glass fibre epoxy were tested. The activities and results documented in the following illustrate ENEA's efforts to support fusion development

  20. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  1. Differential RF MEMS interwoven capacitor immune to residual stress warping

    KAUST Repository

    Elshurafa, Amro M.; Salama, Khaled N.

    2012-01-01

    A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

  2. Improved Battery Charger Circuit Utilizing Reduced DC-link Capacitors

    Directory of Open Access Journals (Sweden)

    Vencislav Valchev

    2017-11-01

    Full Text Available The article presents a comparison of advantages and disadvantages of a battery charger circuit with and without the use of DC-link capacitors in it. The specific application requirements, namely ultra-light electric vehicles, are set as lightness, efficiency and robustness of the design. Prove of greater reliability and improvement on maintenance costs without significant decrease in the quality of charging process with the removal of DC-link capacitors in rectifier and boost converter circuits is accomplished. The proposed circuit parameters are analyzed by carried out simulations.

  3. Differential RF MEMS interwoven capacitor immune to residual stress warping

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-27

    A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

  4. Pulse Capacitors for Next Generation Linear Colliders. Final Report

    International Nuclear Information System (INIS)

    Hooker, M.W.

    2000-01-01

    During this Phase I SBIR research program, Nanomaterials Research Corporation (NRC) successfully demonstrated high-voltage multilayer capacitors produced from sub-100 nm ceramic powders. The devices produced by NRC exhibited properties that make them particularly useful for pulse power applications. These properties include (1) high capacitance (2) low loss (3) high breakdown voltage (4) high insulation resistance and (5) rapid discharge characteristics. Furthermore, the properties of the nanostructured capacitors were consistently found to exceed those of components that represent the state of the art within the industry. Encouraged by these results, NRC is planning to submit a Phase II proposal with the objective of securing seed capital to continue this development effort

  5. RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.

  6. The possibility of giant dielectric materials for multilayer ceramic capacitors.

    Science.gov (United States)

    Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

    2013-02-11

    There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

  7. Capacitance-voltage characterization of fully silicided gated MOS capacitor

    International Nuclear Information System (INIS)

    Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

    2009-01-01

    This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

  8. Online MOS Capacitor Characterization in LabVIEW Environment

    Directory of Open Access Journals (Sweden)

    Chinmay K Maiti

    2009-08-01

    Full Text Available We present an automated evaluation procedure to characterize MOS capacitors involving high-k gate dielectrics. Suitability of LabVIEW environment for online web-based semiconductor device characterization is demonstrated. Developed algorithms have been successfully applied to automate the MOS capacitor measurements for Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. Implementation of the algorithm for use as a remote internet-based characterization tool where the client and server communicate with each other via web services is also shown.

  9. Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

    Directory of Open Access Journals (Sweden)

    H. H. Y. Cheung

    2016-07-01

    Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

  10. Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

    Science.gov (United States)

    Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

    2017-04-19

    Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

  11. Integration substrate with a ultra-high-density capacitor and a through-substrate via

    NARCIS (Netherlands)

    2008-01-01

    An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least 4 elec. conductive capacitor-electrode layers in an alternating arrangement with dielec. layers. The capacitor-electrode layers are

  12. The Two-Capacitor Problem Revisited: A Mechanical Harmonic Oscillator Model Approach

    Science.gov (United States)

    Lee, Keeyung

    2009-01-01

    The well-known two-capacitor problem, in which exactly half the stored energy disappears when a charged capacitor is connected to an identical capacitor, is discussed based on the mechanical harmonic oscillator model approach. In the mechanical harmonic oscillator model, it is shown first that "exactly half" the work done by a constant applied…

  13. Integration substrate with a ultra-high-density capacitor and a through-substrate via

    NARCIS (Netherlands)

    Klootwijk, J.H.; Roozeboom, F.; Ruigrok, J.J.M.; Reefman, D.

    2014-01-01

    An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. --The capacitor-electrode

  14. A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

    NARCIS (Netherlands)

    Mikkenie, R.; Steigelmann, O.; Groen, W.A.; ten Elshof, Johan E.

    2012-01-01

    The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3 μm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at

  15. A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

    NARCIS (Netherlands)

    Mikkenie, R.; Steigelmann, O.; Groen, W.A.; Elshof, J.E. ten

    2012-01-01

    The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3µm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at low

  16. Microstrip Resonator for High Field MRI with Capacitor-Segmented Strip and Ground Plane

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

    2017-01-01

    ) segmenting stripe and ground plane of the resonator with series capacitors. The design equations for capacitors providing symmetric current distribution are derived. The performance of two types of segmented resonators are investigated experimentally. To authors’ knowledge, a microstrip resonator, where both......, strip and ground plane are capacitor-segmented, is shown here for the first time....

  17. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    International Nuclear Information System (INIS)

    Kothapalli, A.; Sadler, G.

    2003-01-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 deg. C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.htmlref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.htmlpage1

  18. ZnO as dielectric for optically transparent non-volatile memory

    International Nuclear Information System (INIS)

    Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

    2009-01-01

    This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

  19. Characteristics of a non-volatile liquid propellant in liquid-fed ablative pulsed plasma thrusters

    Science.gov (United States)

    Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

    2017-02-01

    In the past several decades, the use of electric propulsion in spacecraft has experienced tremendous growth. With the increasing adoption of small satellites in the kilogram range, suitable propulsion systems will be necessary in the near future. Pulsed plasma thrusters (PPTs) were the first form of electric propulsion to be deployed in orbit, and are highly suitable for small satellites due to their inherent simplicity. However, their lifetime is limited by disadvantages such as carbon deposition leading to thruster failure, and complicated feeding systems required due to the conventional use of solid propellants (usually polytetrafluoroethylene (PTFE)). A promising alternative to solid propellants has recently emerged in the form of non-volatile liquids that are stable in vacuum. This study presents a broad comparison of the non-volatile liquid perfluoropolyether (PFPE) and solid PTFE as propellants on a PPT with a common design base. We show that liquid PFPE can be successfully used as a propellant, and exhibits similar plasma discharge properties to conventional solid PTFE, but with a mass bit that is an order of magnitude higher for an identical ablation area. We also demonstrate that the liquid PFPE propellant has exceptional resistance to carbon deposition, completely negating one of the major causes of thruster failure, while solid PTFE exhibited considerable carbon build-up. Energy dispersive X-ray spectroscopy was used to examine the elemental compositions of the surface deposition on the electrodes and the ablation area of the propellant (or PFPE encapsulator). The results show that based on its physical characteristics and behavior, non-volatile liquid PFPE is an extremely promising propellant for use in PPTs, with an extensive scope available for future research and development.

  20. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  1. Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

    Science.gov (United States)

    Kothapalli, A.; Sadler, G.

    2003-08-01

    The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 °C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.html#ref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.html#page1].

  2. Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

    Science.gov (United States)

    Liu, David (Donghang)

    2011-01-01

    This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life

  3. Release and nonvolatile operation of carbon nanotube nanorelay by resonant vibration

    Energy Technology Data Exchange (ETDEWEB)

    Kagota, Tatsuya; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji, E-mail: akita@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Nagataki, Atsuko [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Materials Analysis Research Center, KRI, Inc., Osaka 554-0051 (Japan)

    2013-11-11

    We investigated the release of a stuck carbon nanotube (CNT) cantilever beam in nanorelay applications using a nano-manipulator. Even with strong adhesion induced by electrostatic attraction that is 100 times stronger than the van der Waals interaction, successful release of a nanotube arm from a stuck state was realized by the application of a resonant vibration to the stuck CNT arm. Furthermore, nonvolatile operation of the nanotube nanorelay was demonstrated by the application of the resonant vibration to the stuck CNT arm.

  4. Investigation of non-volatile additives on the process of distillation of hydrocarbon mixtures

    Directory of Open Access Journals (Sweden)

    М.Б. Степанов

    2009-02-01

    Full Text Available  The given results of researches of influence of nonvolatile additives on processes of distillation of individual hydrocarbons and their mixes, including petroleum and mineral oil. With the help of the developed computer system of the continuous control of distillation it is shown, that at the presence of small amounts of the additive decrease of temperature of the beginning of boiling of hydrocarbons is observed, their speeds of banish and exits of light fuel mineral oil grow during initial oil refining

  5. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  6. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    Science.gov (United States)

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

  7. Overview of radiation effects on emerging non-volatile memory technologies

    Directory of Open Access Journals (Sweden)

    Fetahović Irfan S.

    2017-01-01

    Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

  8. High-Speed Non-Volatile Optical Memory: Achievements and Challenges

    Directory of Open Access Journals (Sweden)

    Vadym Zayets

    2017-01-01

    Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

  9. Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

    International Nuclear Information System (INIS)

    Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

    2014-01-01

    Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

  10. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    International Nuclear Information System (INIS)

    Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

    2014-01-01

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

  11. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  12. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

    International Nuclear Information System (INIS)

    Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

    2013-01-01

    This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

  13. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  14. Ceramic capacitor insulation resistance failures accelerated by low voltage

    Science.gov (United States)

    Brennan, T. F.

    1978-01-01

    Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.

  15. Performance and Safety of Lithium-ion Capacitors

    Science.gov (United States)

    Jeevarajan, Judith A.; Martinez, Martin D.

    2014-01-01

    Lithium-ion capacitors (LIC) are a recent innovation in the area of supercapacitors and ultracapacitors. With an operating voltage range similar to that of lithium-ion batteries and a very low selfdischarge rate, these can be readily used in the place of batteries especially when large currents are required to be stored safely for use at a later time.

  16. Multi-step capacitor discharges as an RF generator

    International Nuclear Information System (INIS)

    Hotta, Eiki; Yamamoto, Shunji; Ishii, Shozo; Hayashi, Izumi

    1979-01-01

    A variety of methods have been developed for large output radio frequency (RF) generators to heat and stabilize high temperature plasma. As the generators for this purpose, capacitor discharge, cable discharge, and oscillation with electronic tubes are considered. Here, a new RF generator is reported, which utilizes capacitor discharge to extract heavy current, and solves the difficulty of short duration by employing multistep discharges. The authors solved the problem of frequency decrease in capacitor discharge by cutting off the unnecessary capacitors reasonably from the load circuit, using the additional circuit for shunting current and vacuum gap switches. The vacuum gap switches and the trigger system are described together with the RF generator manufactured. The generator was fabricated to be rather compact for its large output and simple in circuitry as compared with conventional oscillator systems. The shortcomings are frequency variation and the improper phase of switching the next step in to cause instability, when the load change occurs. It would be difficult to operate the generator in a RF range of more than about 10 MHz due to jitter of the vacuum gap switches and others. (Wakatsuki, Y.)

  17. Application of Electric Double Layer Capacitor for Solar Car

    OpenAIRE

    中西, 弘一; 岸, 純男; 仲森, 昌也; 荒賀, 浩一

    2016-01-01

    This paper describes a method for efficient work of electrical energy, using DC-DC converter as insulate between battery and Electrical Double Layer Capacitor (EDLC). In case of constant-current charge to the EDLC, the efficiency of the electric power is higher, compared to the constant-voltage charge.

  18. Analytical evaluation of DC capacitor RMS current and voltage ...

    Indian Academy of Sciences (India)

    K S GOPALAKRISHNAN

    The sizing of the DC-link capacitor in a three-level inverter is based on the RMS current flowing through it. ... Current control; current stress; diode-clamped inverter; full-bridge inverter; half-bridge inverter; ..... leg of an NPC inverter, is simulated using MATLAB .... actual q-axis current and the actual load current change at a.

  19. Harmonic analysis of DC capacitor current in sinusoidal and space ...

    Indian Academy of Sciences (India)

    DC capacitor current in a three-level neutral-point clamped (NPC) inverter, modu- lated with ... For control of the switches in two-level and three-level inverters, numerous pulse-width mod- ..... coincide with each other, and lie on the horizontal axis in figure 5b. The loci of the ... A MATLAB code is written for the purpose. 5.

  20. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  1. Development of novel segmented-plate linearly tunable MEMS capacitors

    International Nuclear Information System (INIS)

    Shavezipur, M; Khajepour, A; Hashemi, S M

    2008-01-01

    In this paper, novel MEMS capacitors with flexible moving electrodes and high linearity and tunability are presented. The moving plate is divided into small and rigid segments connected to one another by connecting beams at their end nodes. Under each node there is a rigid step which selectively limits the vertical displacement of the node. A lumped model is developed to analytically solve the governing equations of coupled structural-electrostatic physics with mechanical contact. Using the analytical solver, an optimization program finds the best set of step heights that provides the highest linearity. Analytical and finite element analyses of two capacitors with three-segmented- and six-segmented-plate confirm that the segmentation technique considerably improves the linearity while the tunability remains as high as that of a conventional parallel-plate capacitor. Moreover, since the new designs require customized fabrication processes, to demonstrate the applicability of the proposed technique for standard processes, a modified capacitor with flexible steps designed for PolyMUMPs is introduced. Dimensional optimization of the modified design results in a combination of high linearity and tunability. Constraining the displacement of the moving plate can be extended to more complex geometries to obtain smooth and highly linear responses

  2. All-printed capacitors with continuous solution dispensing technology

    Science.gov (United States)

    Ge, Yang; Plötner, Matthias; Berndt, Andreas; Kumar, Amit; Voit, Brigitte; Pospiech, Doris; Fischer, Wolf-Joachim

    2017-09-01

    Printed electronics have been introduced into the commercial markets in recent years. Various printing technologies have emerged aiming to process printed electronic devices with low cost, environmental friendliness, and compatibility with large areas and flexible substrates. The aim of this study is to propose a continuous solution dispensing technology for processing all-printed thin-film capacitors on glass substrates using a leading-edge printing instrument. Among all printing technologies, this study provides concrete proof of the following outstanding advantages of this technology: high tolerance to inks, high throughput, low cost, and precise pattern transfers. Ag nanoparticle ink based on glycol ethers was used to print the electrodes. To obtain dielectric ink, a copolymer powder of poly(methyl methacrylate-co-benzoylphenyl methacrylate) containing crosslinkable side groups was dissolved in anisole. Various layouts were designed to support multiple electronic applications. Scanning electron microscopy and atomic force microscopy were used to investigate the all-printed capacitor layers formed using the proposed process. Additionally, the printed capacitors were electrically characterized under direct current and alternating current. The measured electrical properties of the printed capacitors were consistent with the theoretical results.

  3. Optimal capacitor placement and sizing using combined fuzzy ...

    African Journals Online (AJOL)

    Then the sizing of the capacitors is modeled as an optimization problem and the objective function (loss minimization) is solved using Hybrid Particle Swarm Optimization (HPSO) technique. A case study with an IEEE 34 bus distribution feeder is presented to illustrate the applicability of the algorithm. A comparison is made ...

  4. Switchable capacitor and method of making the same

    NARCIS (Netherlands)

    Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, Hendrikus; De Raedt, Walter

    2006-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to

  5. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  6. Switchable capacitor and method of making the same

    NARCIS (Netherlands)

    Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, Hendrikus; De Raedt, Walter

    2003-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to

  7. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

    Science.gov (United States)

    Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

    2016-10-12

    Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

  8. Carbons, ionic liquids and quinones for electrochemical capacitors

    Directory of Open Access Journals (Sweden)

    Raul eDiaz

    2016-04-01

    Full Text Available Carbons are the main electrode materials used in electrochemical capacitors, which are electrochemical energy storage devices with high power densities and long cycling lifetimes. However, increasing their energy density will improve their potential for commercial implementation. In this regard, the use of high surface area carbons and high voltage electrolytes are well known strategies to increase the attainable energy density, and lately ionic liquids have been explored as promising alternatives to current state of the art acetonitrile-based electrolytes. Also, in terms of safety and sustainability ionic liquids are attractive electrolyte materials for electrochemical capacitors. In addition, it has been shown that the matching of the carbon pore size with the electrolyte ion size further increases the attainable electric double layer (EDL capacitance and energy density.The use of pseudocapacitive reactions can significantly increase the attainable energy density, and quinonic-based materials offer a potentially sustainable and cost effective research avenue for both the electrode and the electrolyte. This perspective will provide an overview of the current state of the art research on electrochemical capacitors based on combinations of carbons, ionic liquids and quinonic compounds, highlighting performances and challenges and discussing possible future research avenues. In this regard, current interest is mainly focused on strategies which may ultimately lead to commercially competitive sustainable high performance electrochemical capacitors for different applications including those requiring mechanical flexibility and biocompatibility.

  9. Mismatch-Shaped Pseudo-Passive Two-Capacitor DAC

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper; Moon, Un-Ku; Temes, Gabor C.

    1999-01-01

    A simple mismatch-shaping scheme is proposed for a two-capacitor DAC. Unlike in other mismatch-shaping systems, the shaped error is generated by direct filtering of a well-defined bounded signal, which can be generated as white noise. The operation is closely related to a specific digital...

  10. Plasma damage in floating metal-insulator-metal capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

    2002-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  11. Residual stresses in multilayer ceramic capacitors: measurement and computation

    NARCIS (Netherlands)

    Toonder, den J.M.J.; Rademaker, C.W.; Hu, C.L.

    2003-01-01

    In this paper, we present a combined experimental and computational study of the thermomechanical reliability of multilayer ceramic capacitors (MLCC's). We focus on residual stresses introduced into the components during the cooling down step of the sintering process. The technique of

  12. Mismatch-shaping switching for two-capacitor DAC

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper; Moon, U.; Temes, G.C.

    1998-01-01

    A mismatch-shaping scheme is proposed for a two-capacitor digital-to-analogue converter (DAC). It uses a delta-sigma loop for finding the optimal switching sequence for each input word. Simulations indicate that the scheme can be used for the realisation of DACs with 16 bit linearity and SNR...

  13. Plasma Damage in Floating Metal-Insulator-Metal Capacitors

    NARCIS (Netherlands)

    Ackaert, Jan; Wang, Zhichun; Backer, E.; Coppens, P.

    2001-01-01

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

  14. Lifetime Estimation of Electrolytic Capacitors in Fuel Cell Power Converter at Various Confidence Levels

    DEFF Research Database (Denmark)

    Zhou, Dao; Wang, Huai; Blaabjerg, Frede

    2016-01-01

    DC capacitors in power electronic converters are a major constraint on improvement of the power density and the reliability. In this paper, according to the degradation data of tested capacitors, the lifetime model of the component is analyzed at various confidence levels. Then, the mission profile...... based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in a fuel cell backup power converter operating in both standby mode and operation mode. The lifetime prediction of the capacitor banks at different confidence levels is also obtained....

  15. Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

    DEFF Research Database (Denmark)

    Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

    2016-01-01

    The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

  16. Reliability-oriented Design of a Cost-effective Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai

    2017-01-01

    This paper presents the reliability-oriented design of a two-terminal active capacitor proposed recently. The two-terminal active capacitor has the same level of convenience as a passive capacitor with reduced requirement of overall energy storage. In order to fully explore the potential...... of the proposed concept, a comprehensive design procedure is necessary to optimally sizing the key components of the active capacitor in terms of cost and reliability. Moreover, the inherent condition monitoring capability of the active capacitor is discussed by utilizing the existing feedback signals. A 500 W...

  17. Programmable, very low noise current source

    Science.gov (United States)

    Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.

    2014-12-01

    We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.

  18. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  19. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Li, E-mail: lizhang9@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Li, Ye; Shi, Jun [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Shi, Gaoquan [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Cao, Shaokui, E-mail: Caoshaokui@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2013-11-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10{sup 5}. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states.

  20. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-07-23

    Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  1. Migration of residual nonvolatile and inorganic compounds from recycled post-consumer PET and HDPE

    Energy Technology Data Exchange (ETDEWEB)

    Dutra, Camila; Reyes, Felix G.R., E-mail: reyesfgr@fea.unicamp.br [Universidade de Campinas (UNICAMP), SP (Brazil). Escola de Engenharia dos Alimentos. Dept. de Ciencias dos Alimentos; Freire, Maria Teresa de A. [Universidade de Sao Paulo (USP), Pirassununga, SP (Brazil). Fac. de Ciencia Animal e Engenharia dos Alimentos. Dept. de Engenharia dos Alimentos; Nerin, Cristina; Bentayeb, Karim; Rodriguez-Lafuente, Angel; Aznar, Margarita [Dept. of Analytical Chemistry, Arago Inst. of Engineering Research, University of Zaragoza (Spain)

    2014-04-15

    Migration of nonvolatile and inorganic residual compounds from post-consumer recycled polyethylene terephthalate (PET) submitted to cleaning processes for subsequent production of materials intended to food contact, as well as from multilayer packaging material containing post-consumer recycled high-density polyethylene (HDPE) was determined. Tests were carried out using food simulant. Nonvolatile organic contaminants from PET, determined by liquid chromatography-mass spectrometry (UPLC-QqQ/MS), showed significant migration reduction as consequence of the more complex cleaning technologies applied. However, contaminants not allowed by Brazilian and European Union regulations were identified even in deep cleaning samples. Results from multilayer HDPE showed a greater number of contaminants when compared to recycled pellets. Inorganic contaminants, determined by inductively coupled plasma mass spectrometry were below the acceptable levels. Additional studies for identification and quantitation of unknown molecules which were not possible to identify in this study by UPLC-QqQ/MS are required to ascertain the safety of using post-consumer recycled packaging material. (author)

  2. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    Directory of Open Access Journals (Sweden)

    Mohamed T. Ghoneim

    2015-07-01

    Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  3. Properties of nonvolatile and antibacterial bioboard produced from bamboo macromolecules by hot pressing

    Directory of Open Access Journals (Sweden)

    Shengbo Ge

    2018-03-01

    Full Text Available Employing the antibacterial property of industrial bamboo vinegar (IBV and the photocatalytic degradation of TiO2, bamboo macromolecules were pretreated and processed into nonvolatile and antibacterial bio board (NVABB. The NVABB was then analyzed by conducting Fourier-transform infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. Results show that NVABB samples had average density of 0.96 g/cm3, which is appropriate for application. In terms of physical and mechanical properties, the best NVABB sample obtained from IBV, TiO2 and bamboo had an IBV pretreatment time of 10 min, 2% TiO2 and 1% bamboo charcoal. Fourier-transform infrared spectroscopy demonstrated that optimum conditions for hot pressing were a temperature of 170 °C, duration of 15 min and the addition of IBV and TiO2. Thermogravimetric analysis/differential thermal analysis curves suggest that the thermal degradation of NVABB was less than that of bamboo and that hot pressing obviously increased the thermal stability of HDBB samples. Analysis of the antimicrobial effect revealed that IBV pretreatment improves the antibacterial property of NVABB. Keywords: Industrial bamboo vinegar, Nonvolatile and antibacterial bio board, Bamboo macromolecules, Fourier-transform infrared spectroscopy, Thermogravimetric analysis/differential thermal analysis

  4. Interlaboratory study of a method for determining nonvolatile organic carbon in aquifer materials

    Science.gov (United States)

    Caughey, M.E.; Barcelona, M.J.; Powell, R.M.; Cahill, R.A.; Gron, C.; Lawrenz, D.; Meschi, P.L.

    1995-01-01

    The organic carbon fraction in aquifer materials exerts a major influence on the subsurface mobilities of organic and organic-associated contaminants. The spatial distribution of total organic carbon (TOC) in aquifer materials must be determined before the transport of hydrophobic organic pollutants in aquifers can be modeled accurately. Previous interlaboratory studies showed that it is difficult to measure TOC concentrations 1%. We have tested a new analytical method designed to improve the accuracy and precision of nonvolatile TOC quantitation in geologic materials that also contain carbonate minerals. Four authentic aquifer materials and one NIST standard reference material were selected as test materials for a blind collaborative study. Nonvolatile TOC in these materials ranged from 0.05 to 1.4%, while TIC ranged from 0.46 to 12.6%. Sample replicates were digested with sulfurous acid, dried at 40??C, and then combusted at 950??C using LECO or UIC instruments. For the three test materials that contained >2% TIC, incomplete acidification resulted in a systematic positive bias of TOC values reported by five of the six laboratories that used the test method. Participants did not have enough time to become proficient with the new method before they analyzed the test materials. A seventh laboratory successfully used an alternative method that analyzed separate liquid and solid fractions of the acidified sample residues. ?? 1995 Springer-Verlag.

  5. Design exploration of emerging nano-scale non-volatile memory

    CERN Document Server

    Yu, Hao

    2014-01-01

    This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

  6. A review of emerging non-volatile memory (NVM) technologies and applications

    Science.gov (United States)

    Chen, An

    2016-11-01

    This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

  7. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

    KAUST Repository

    Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2015-01-01

    Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

  8. Volatiles and Nonvolatiles in Flourensia campestris Griseb. (Asteraceae), How Much Do Capitate Glandular Trichomes Matter?

    Science.gov (United States)

    Piazza, Leonardo A; López, Daniela; Silva, Mariana P; López Rivilli, Marisa J; Tourn, Mónica G; Cantero, Juan J; Scopel, Ana L

    2018-03-01

    The distribution and ultrastructure of capitate glandular trichomes (GTs) in Flourensia species (Asteraceae) have been recently elucidated, but their metabolic activity and potential biological function remain unexplored. Selective nonvolatile metabolites from isolated GTs were strikingly similar to those found on leaf surfaces. The phytotoxic allelochemical sesquiterpene (-)-hamanasic acid A ((-)-HAA) was the major constituent (ca. 40%) in GTs. Although GTs are quaternary ammonium compounds (QACs)-accumulating species, glycine betaine was not found in GTs; it was only present in the leaf mesophyll. Two (-)-HAA accompanying surface secreted products: compounds 4-hydroxyacetophenone (piceol; 1) and 2-hydroxy-5-methoxyacetophenone (2), which were isolated and fully characterized (GC/MS, NMR), were present in the volatiles found in GTs. The essential oils of fresh leaves revealed ca. 33% monoterpenes, 26% hydrocarbon- and 30% oxygenated sesquiterpenes, most of them related to cadinene and bisabolene derivatives. Present results suggest a main role of GTs in determining the volatile and nonvolatile composition of F. campestris leaves. Based on the known activities of the compounds identified, it can be suggested that GTs in F. campestris would play key ecological functions in plant-pathogen and plant-plant interactions. In addition, the strikingly high contribution of compounds derived from cadinene and bisabolene pathways, highlights the potential of this species as a source of high-valued bioproducts. © 2018 Wiley-VHCA AG, Zurich, Switzerland.

  9. Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

    2014-02-15

    In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

  10. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

    International Nuclear Information System (INIS)

    Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

    2008-01-01

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

  11. Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

    International Nuclear Information System (INIS)

    Zhang, Li; Li, Ye; Shi, Jun; Shi, Gaoquan; Cao, Shaokui

    2013-01-01

    An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10 5 . Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states

  12. Metal-organic molecular device for non-volatile memory storage

    International Nuclear Information System (INIS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-01-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  13. Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

    Science.gov (United States)

    Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

    2017-02-22

    All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

  14. National programme: Finland

    International Nuclear Information System (INIS)

    Forsten, J.

    1986-01-01

    Finland's programmes in the field of reactor pressure components are presented in this paper. The following information on each of these programmes is given: the brief description of the programme; the programme's schedule and duration; the name of the project manager

  15. A new method of optimal capacitor switching based on minimum spanning tree theory in distribution systems

    Science.gov (United States)

    Li, H. W.; Pan, Z. Y.; Ren, Y. B.; Wang, J.; Gan, Y. L.; Zheng, Z. Z.; Wang, W.

    2018-03-01

    According to the radial operation characteristics in distribution systems, this paper proposes a new method based on minimum spanning trees method for optimal capacitor switching. Firstly, taking the minimal active power loss as objective function and not considering the capacity constraints of capacitors and source, this paper uses Prim algorithm among minimum spanning trees algorithms to get the power supply ranges of capacitors and source. Then with the capacity constraints of capacitors considered, capacitors are ranked by the method of breadth-first search. In term of the order from high to low of capacitor ranking, capacitor compensation capacity based on their power supply range is calculated. Finally, IEEE 69 bus system is adopted to test the accuracy and practicality of the proposed algorithm.

  16. Practical Considerations of the Start-up Procedure for an Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Qian; Geng, Tao

    2017-01-01

    Capacitive DC links provide the only low-impedance current path connected with an input source during the start-up of many voltage source converters. A soft-start circuit is usually implemented to limit the inrush current. A two-terminal active capacitor is recently proposed which can directly...... replace conventional passive capacitors in DC links, with reduced cost or size for a given application. The active capacitor has the same level of convenience with two power terminals only as a passive capacitor. This paper proposes two start-up schemes for the active capacitor to overcome the drawbacks...... of existing methods previously widely used for passive capacitors. One scheme is based on a trade-off design between the start-up performance and the component sizing of the active capacitor. The other scheme is based on either an additional bypass switch together with the existing soft-start circuit...

  17. Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

    Science.gov (United States)

    Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin

    2012-08-01

    The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au source-drain being proposed. To achieve the QD-PMMA composite layer, a two-step spin coating technique was used to successively deposit QD-PMMA composite and PMMA on the insulator. After the processes, the variation of crystal quality and surface morphology of the subsequent pentacene films characterized by x-ray diffraction spectra and atomic force microscopy was correlated to the two-step spin coating. The crystalline size of pentacene was improved from 147.9 to 165.2 Å, while the degree of structural disorder was decreased from 4.5% to 3.1% after the adoption of this technique. In pentacene-based TFTs, the improvement of the performance was also significant, besides the appearances of strong memory characteristics. The memory behaviors were attributed to the charge storage/discharge effect in QD-PMMA composite layer. Under the programming and erasing operations, programmable memory devices with the memory window (Δ Vth) = 23 V and long retention time were obtained.

  18. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    International Nuclear Information System (INIS)

    Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

    2015-01-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

  19. Dietary exposure to volatile and non-volatile N-nitrosamines from processed meat products in Denmark

    DEFF Research Database (Denmark)

    Herrmann, Susan Strange; Duedahl-Olesen, Lene; Christensen, Tue

    2015-01-01

    the carcinogenicity for the majority of the non-volatile NA (NVNA) remains to be elucidated. Danish adults (15–75 years) and children (4–6 years) consume 20 g and 16 g of processed meat per day (95th percentile), respectively. The consumption is primarily accounted for by sausages, salami, pork flank (spiced...

  20. High energy storage capacitor by embedding tunneling nano-structures

    Science.gov (United States)

    Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

    2014-11-04

    In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

  1. Carbon activation process for increased surface accessibility in electrochemical capacitors

    Science.gov (United States)

    Doughty, Daniel H.; Eisenmann, Erhard T.

    2001-01-01

    A process for making carbon film or powder suitable for double capacitor electrodes having a capacitance of up to about 300 F/cm.sup.3 is disclosed. This is accomplished by treating in aqueous nitric acid for a period of about 5 to 15 minutes thin carbon films obtained by carbonizing carbon-containing polymeric material having a high degree of molecular directionality, such as polyimide film, then heating the treated carbon film in a non-oxidizing atmosphere at a non-graphitizing temperature of at least 350.degree. C. for about 20 minutes, and repeating alternately the nitric acid step and the heating step from 7 to 10 times. Capacitors made with this carbon may find uses ranging from electronic devices to electric vehicle applications.

  2. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    CERN Document Server

    Vaidya, S J; Shaikh, A M; Chandorkar, A N

    2002-01-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co sup 6 sup 0 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radi...

  3. Discharging a DC bus capacitor of an electrical converter system

    Science.gov (United States)

    Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

    2014-10-14

    A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

  4. A Wireless Implantable Switched-Capacitor Based Optogenetic Stimulating System

    Science.gov (United States)

    Lee, Hyung-Min; Kwon, Ki-Yong; Li, Wen

    2015-01-01

    This paper presents a power-efficient implantable optogenetic interface using a wireless switched-capacitor based stimulating (SCS) system. The SCS efficiently charges storage capacitors directly from an inductive link and periodically discharges them into an array of micro-LEDs, providing high instantaneous power without affecting wireless link and system supply voltage. A custom-designed computer interface in LabVIEW environment wirelessly controls stimulation parameters through the inductive link, and an optrode array enables simultaneous neural recording along with optical stimulation. The 4-channel SCS system prototype has been implemented in a 0.35-μm CMOS process and combined with the optrode array. In vivo experiments involving light-induced local field potentials verified the efficacy of the SCS system. An implantable version of the SCS system with flexible hermetic sealing is under development for chronic experiments. PMID:25570099

  5. Extracting renewable energy from a salinity difference using a capacitor.

    Science.gov (United States)

    Brogioli, Doriano

    2009-07-31

    Completely renewable energy can be produced by using water solutions of different salinity, like river water and sea water. Many different methods are already known, but development is still at prototype stage. Here I report a novel method, based on electric double-layer capacitor technology. Two porous electrodes, immersed in the salt solution, constitute a capacitor. It is first charged, then the salt solution is brought into contact with fresh water. The electrostatic energy increases as the salt concentration of the solution is reduced due to diffusion. This device can be used to turn sources of salinity difference into completely renewable sources of energy. An experimental demonstration is given, and performances and possible improvements are discussed.

  6. Carbon-Based Fibrous EDLC Capacitors and Supercapacitors

    Directory of Open Access Journals (Sweden)

    C. Lekakou

    2011-01-01

    Full Text Available This paper investigates electrochemical double-layer capacitors (EDLCs including two alternative types of carbon-based fibrous electrodes, a carbon fibre woven fabric (CWF and a multiwall carbon nanotube (CNT electrode, as well as hybrid CWF-CNT electrodes. Two types of separator membranes were also considered. An organic gel electrolyte PEO-LiCIO4-EC-THF was used to maintain a high working voltage. The capacitor cells were tested in cyclic voltammetry, charge-discharge, and impedance tests. The best separator was a glass fibre-fine pore filter. The carbon woven fabric electrode and the corresponding supercapacitor exhibited superior performance per unit area, whereas the multiwall carbon nanotube electrode and corresponding supercapacitor demonstrated excellent specific properties. The hybrid CWF-CNT electrodes did not show a combined improved performance due to the lack of carbon nanotube penetration into the carbon fibre fabric.

  7. Graphene oxide-based flexible metal–insulator–metal capacitors

    International Nuclear Information System (INIS)

    Bag, A; Hota, M K; Mallik, S; Maiti, C K

    2013-01-01

    This work explores the fabrication of graphene oxide (GO)-based metal–insulator–metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ∼4 fF µm −2 measured at 1 MHz and permittivity of ∼6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending. (paper)

  8. Permanent split capacitor single phase electric motor system

    Science.gov (United States)

    Kirschbaum, H.S.

    1984-08-14

    A permanent split capacitor single phase electric motor achieves balanced operation at more than one operating point by adjusting the voltage supplied to the main and auxiliary windings and adjusting the capacitance in the auxiliary winding circuit. An intermediate voltage tap on an autotransformer supplies voltage to the main winding for low speed operation while a capacitive voltage divider is used to adjust the voltage supplied to the auxiliary winding for low speed operation. 4 figs.

  9. Clad fiber capacitor and method of making same

    Science.gov (United States)

    Tuncer, Enis

    2012-12-11

    A clad capacitor and method of manufacture includes assembling a preform comprising a ductile, electrically conductive fiber; a ductile, electrically insulating cladding positioned on the fiber; and a ductile, electrically conductive sleeve positioned over the cladding. One or more preforms are then bundled, heated and drawn along a longitudinal axis to decrease the diameter of the ductile components of the preform and fuse the preform into a unitized strand.

  10. A review of molecular modelling of electric double layer capacitors.

    Science.gov (United States)

    Burt, Ryan; Birkett, Greg; Zhao, X S

    2014-04-14

    Electric double-layer capacitors are a family of electrochemical energy storage devices that offer a number of advantages, such as high power density and long cyclability. In recent years, research and development of electric double-layer capacitor technology has been growing rapidly, in response to the increasing demand for energy storage devices from emerging industries, such as hybrid and electric vehicles, renewable energy, and smart grid management. The past few years have witnessed a number of significant research breakthroughs in terms of novel electrodes, new electrolytes, and fabrication of devices, thanks to the discovery of innovative materials (e.g. graphene, carbide-derived carbon, and templated carbon) and the availability of advanced experimental and computational tools. However, some experimental observations could not be clearly understood and interpreted due to limitations of traditional theories, some of which were developed more than one hundred years ago. This has led to significant research efforts in computational simulation and modelling, aimed at developing new theories, or improving the existing ones to help interpret experimental results. This review article provides a summary of research progress in molecular modelling of the physical phenomena taking place in electric double-layer capacitors. An introduction to electric double-layer capacitors and their applications, alongside a brief description of electric double layer theories, is presented first. Second, molecular modelling of ion behaviours of various electrolytes interacting with electrodes under different conditions is reviewed. Finally, key conclusions and outlooks are given. Simulations on comparing electric double-layer structure at planar and porous electrode surfaces under equilibrium conditions have revealed significant structural differences between the two electrode types, and porous electrodes have been shown to store charge more efficiently. Accurate electrolyte and

  11. Electrochemical capacitor based on materials with pseudocapacitive properties

    OpenAIRE

    Olivia Moreno, David

    2011-01-01

    This thesis is divided into two chapters. Chapter 1 is about energy storage device such as the electrochemical capacitor (EC) and the electrode materials used for its construction. The basic principle of supercapacitor performance, double-layer capacitance and pseudocapacitance phenomena are described in the introduction. Activated carbons, nanotubes, conducting polymers and metal oxides as well as their composites were considered as electrode materials. Symmetric and asymmetric configurat...

  12. Comparison of topologies suitable for Capacitor Charging Systems

    CERN Document Server

    Maestri, S; Uicich, G; Benedetti, M; Cravero, JM

    2014-01-01

    This paper presents a comparison between topologies suitable for capacitor charging systems. The topologies under evaluation are a flyback converter, a half-bridge series resonant converter and a full-bridge phase-shifted converter. The main features of these topologies are highlighted, which allows the proper topology selection according to the application requirements. Moreover, the performed analysis permits to characterize the operational range of the main components thus allowing their appropriate sizing and selection. Simulation results are provided.

  13. BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

    Energy Technology Data Exchange (ETDEWEB)

    Mudge, Trevor [Univ. of Michigan, Ann Arbor, MI (United States)

    2017-12-15

    This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in Exascale systems. Capacity and energy are the key drivers.

  14. Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

    Science.gov (United States)

    Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

    2017-05-01

    Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

  15. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    Science.gov (United States)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  16. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-07-11

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  17. A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-02-01

    Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

  18. Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

    Science.gov (United States)

    Wang, Lidan; Su, Zisheng; Wang, Cheng

    2012-05-01

    Nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (F16CuPc) single layer sandwiched between indium tin oxide (ITO) anode and Al cathode. The as fabricated device remains in ON state and it can be tuned to OFF state by applying a reverse bias. The ON/OFF current ratio of the device can reach up to 2.3 × 103. Simultaneously, the device shows long-term storage stability and long retention time in air. The ON/OFF transition is attributed to the formation and destruction of the interfacial dipole layer in the ITO/F16CuPc interface, and such a mechanism is different from previously reported ones.

  19. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

    International Nuclear Information System (INIS)

    Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

    2010-01-01

    A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Conjugated donor-acceptor-acceptor (D-A-A) molecule for organic nonvolatile resistor memory.

    Science.gov (United States)

    Dong, Lei; Li, Guangwu; Yu, An-Dih; Bo, Zhishan; Liu, Cheng-Liang; Chen, Wen-Chang

    2014-12-01

    A new donor-acceptor-acceptor (D-A-A) type of conjugated molecule, N-(4-(N',N'-diphenyl)phenylamine)-4-(4'-(2,2-dicyanovinyl)phenyl) naphthalene-1,8-dicarboxylic monoimide (TPA-NI-DCN), consisting of triphenylamine (TPA) donors and naphthalimide (NI)/dicyanovinylene (DCN) acceptors was synthesized and characterized. In conjunction with previously reported D-A based materials, the additional DCN moiety attached as end group in the D-A-A configuration can result in a stable charge transfer (CT) and charge-separated state to maintain the ON state current. The vacuum-deposited TPA-NI-DCN device fabricated as an active memory layer was demonstrated to exhibit write-once-read-many (WORM) switching characteristics of organic nonvolatile memory due to the strong polarity of the TPA-NI-DCN moiety. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

    International Nuclear Information System (INIS)

    Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

    2014-01-01

    Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

  2. Standard Test Method for Gravimetric Determination of Nonvolatile Residue (NVR) in Environmentally Controlled Areas for Spacecraft

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This test method covers the determination of nonvolatile residue (NVR) fallout in environmentally controlled areas used for the assembly, testing, and processing of spacecraft. 1.2 The NVR of interest is that which is deposited on sampling plate surfaces at room temperature: it is left to the user to infer the relationship between the NVR found on the sampling plate surface and that found on any other surfaces. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

  3. Standard Test Method for Gravimetric Determination of Nonvolatile Residue From Cleanroom Wipers

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2006-01-01

    1.1 This test method covers the determination of solvent extractable nonvolatile residue (NVR) from wipers used in assembly, cleaning, or testing of spacecraft, but not from those used for analytical surface sampling of hardware. 1.2 The values stated in SI units are to be regarded as the standard. No other units of measurement are included in this standard. 1.3 The NVR of interest is that which can be extracted from cleanroom wipers using a specified solvent that has been selected for its extractive qualities. Alternative solvents may be selected, but since their use may result in different values being generated, they must be identified in the procedure data sheet. This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  4. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    Science.gov (United States)

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  5. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  6. Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    Directory of Open Access Journals (Sweden)

    Uvais Valiyaneerilakkal

    2013-04-01

    Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  7. Measurements of the size dependence of the concentration of nonvolatile material in fog droplets

    Science.gov (United States)

    Ogren, J. A.; Noone, K. J.; Hallberg, A.; Heintzenberg, J.; Schell, D.; Berner, A.; Solly, I.; Kruisz, C.; Reischl, G.; Arends, B. G.; Wobrock, W.

    1992-11-01

    Measurements of the size dependence of the mass concentration of nonvolatile material dissolved and suspended in fog droplets were obtained with three complementary approaches, covering a size range from c. 1 50µm diameter: a counterflow virtual impactor, an eight-stage aerosol impactor, and a two-stage fogwater impactor. Concentrations were observed to decrease with size over the entire range, contrary to expectations of increasing concentrations at larger sizes. It is possible that the larger droplets had solute concentrations that increased with increasing size, but that the increase was too weak for the measurements to resolve. Future studies should consider the hypothesis that the droplets were coated with a surface-active substance that hindered their uptake of water.

  8. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

    Science.gov (United States)

    Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

    2018-04-01

    We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

  9. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  10. A room-temperature non-volatile CNT-based molecular memory cell

    Science.gov (United States)

    Ye, Senbin; Jing, Qingshen; Han, Ray P. S.

    2013-04-01

    Recent experiments with a carbon nanotube (CNT) system confirmed that the innertube can oscillate back-and-forth even under a room-temperature excitation. This demonstration of relative motion suggests that it is now feasible to build a CNT-based molecular memory cell (MC), and the key to bring the concept to reality is the precision control of the moving tube for sustained and reliable read/write (RW) operations. Here, we show that by using a 2-section outertube design, we are able to suitably recalibrate the system energetics and obtain the designed performance characteristics of a MC. Further, the resulting energy modification enables the MC to operate as a non-volatile memory element at room temperatures. Our paper explores a fundamental understanding of a MC and its response at the molecular level to roadmap a novel approach in memory technologies that can be harnessed to overcome the miniaturization limit and memory volatility in memory technologies.

  11. Modulation of Molecular Flux Using a Graphene Nanopore Capacitor.

    Science.gov (United States)

    Shankla, Manish; Aksimentiev, Aleksei

    2017-04-20

    Modulation of ionic current flowing through nanoscale pores is one of the fundamental biological processes. Inspired by nature, nanopores in synthetic solid-state membranes are being developed to enable rapid analysis of biological macromolecules and to serve as elements of nanofludic circuits. Here, we theoretically investigate ion and water transport through a graphene-insulator-graphene membrane containing a single, electrolyte-filled nanopore. By means of all-atom molecular dynamics simulations, we show that the charge state of such a graphene nanopore capacitor can regulate both the selectivity and the magnitude of the nanopore ionic current. At a fixed transmembrane bias, the ionic current can be switched from being carried by an equal mixture of cations and anions to being carried almost exclusively by either cationic or anionic species, depending on the sign of the charge assigned to both plates of the capacitor. Assigning the plates of the capacitor opposite sign charges can either increase the nanopore current or reduce it substantially, depending on the polarity of the bias driving the transmembrane current. Facilitated by the changes of the nanopore surface charge, such ionic current modulations are found to occur despite the physical dimensions of the nanopore being an order of magnitude larger than the screening length of the electrolyte. The ionic current rectification is accompanied by a pronounced electro-osmotic effect that can transport neutral molecules such as proteins and drugs across the solid-state membrane and thereby serve as an interface between electronic and chemical signals.

  12. Random Vibration Testing of Advanced Wet Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

  13. Redox-capacitor to connect electrochemistry to redox-biology.

    Science.gov (United States)

    Kim, Eunkyoung; Leverage, W Taylor; Liu, Yi; White, Ian M; Bentley, William E; Payne, Gregory F

    2014-01-07

    It is well-established that redox-reactions are integral to biology for energy harvesting (oxidative phosphorylation), immune defense (oxidative burst) and drug metabolism (phase I reactions), yet there is emerging evidence that redox may play broader roles in biology (e.g., redox signaling). A critical challenge is the need for tools that can probe biologically-relevant redox interactions simply, rapidly and without the need for a comprehensive suite of analytical methods. We propose that electrochemistry may provide such a tool. In this tutorial review, we describe recent studies with a redox-capacitor film that can serve as a bio-electrode interface that can accept, store and donate electrons from mediators commonly used in electrochemistry and also in biology. Specifically, we (i) describe the fabrication of this redox-capacitor from catechols and the polysaccharide chitosan, (ii) discuss the mechanistic basis for electron exchange, (iii) illustrate the properties of this redox-capacitor and its capabilities for promoting redox-communication between biology and electrodes, and (iv) suggest the potential for enlisting signal processing strategies to "extract" redox information. We believe these initial studies indicate broad possibilities for enlisting electrochemistry and signal processing to acquire "systems level" redox information from biology.

  14. The influence of capacitor banks on transformer load current

    Directory of Open Access Journals (Sweden)

    Jović Aleksandar S.

    2017-01-01

    Full Text Available This paper deals with the influence of capacitor banks used for reactive energy compensation on total load current of 10/0,4 kV/kV distribution transformers. The analysis regards distribution area of Leskovac which comprehends town Leskovac and nearby settlements. Differently from previously published references that treat excessively reactive energy consumption, the value of reactive power on low voltage side of transformer taking into account the presence of capacitor banks is observed primarily in this paper. Both theoretically possible cases are restated on the basis of measurements: the compensation is adequate or inadequate. The cases of insufficient compensation and overcompensation are regarded to be inadequate compensation. The adequate compensation is achieved when reactive power oscillates around 0 kvar. The special case of adequate compensation, called conditionally adequate compensation, is introduced. For all four cases that describe reactive energy compensation, the calculation results of relative change of low voltage transformer current in the presence of capacitor banks, in comparison to the current without installed banks are presented.

  15. Electric converters of electromagnetic strike machine with capacitor supply

    Science.gov (United States)

    Usanov, K. M.; Volgin, A. V.; Kargin, V. A.; Moiseev, A. P.; Chetverikov, E. A.

    2018-03-01

    The application of pulse linear electromagnetic engines in small power strike machines (energy impact is 0.01...1.0 kJ), where the characteristic mode of rare beats (pulse seismic vibrator, the arch crash device bins bulk materials), is quite effective. At the same time, the technical and economic performance of such machines is largely determined by the ability of the power source to provide a large instantaneous power of the supply pulses in the winding of the linear electromagnetic motor. The use of intermediate energy storage devices in power systems of rare-shock LEME makes it possible to obtain easily large instantaneous powers, forced energy conversion, and increase the performance of the machine. A capacitor power supply of a pulsed source of seismic waves is proposed for the exploration of shallow depths. The sections of the capacitor storage (CS) are connected to the winding of the linear electromagnetic motor by thyristor dischargers, the sequence of activation of which is determined by the control device. The charge of the capacitors to the required voltage is made directly from the battery source, or through the converter from a battery source with a smaller number of batteries.

  16. Chemical modification of graphene aerogels for electrochemical capacitor applications.

    Science.gov (United States)

    Hong, Jin-Yong; Wie, Jeong Jae; Xu, Yu; Park, Ho Seok

    2015-12-14

    Graphene aerogel is a relatively new type of aerogel that is ideal for energy storage applications because of its large surface area, high electrical conductivity and good chemical stability. Also, three dimensional interconnected macropores offer many advantages such as low density, fast ion and mass transfer, and easy access to storage sites. Such features allow graphene aerogels to be intensively applied for electrochemical capacitor applications. Despite the growing interest in graphene aerogel-based electrochemical capacitors, however, the graphene aerogels still suffer from their low capacitive performances and high fragility. Both relatively low capacitance and brittleness of physically crosslinked graphene aerogels remain a critical challenge. Until now, a number of alternative attempts have been devoted to overcome these shortcomings. In this perspective, we summarize the recent research progress towards the development of advanced graphene aerogel-based electrochemical capacitors according to the different approaches (e.g. porosity, composition and structure controls). Then, the recently proposed chemical strategies to improve the capacitive performances and mechanical durability of graphene aerogels for practical applications are highlighted. Finally, the current challenges and perspectives in this emerging material are also discussed.

  17. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids

    Directory of Open Access Journals (Sweden)

    Hongbin Lin

    2018-05-01

    Full Text Available Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC. Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln, glutamic acid (Glu, aspartic acid (Asp and asparagines (Asn were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  18. Method for the Collection, Gravimetric and Chemical Analysis of Nonvolatile Residue (NVR) on Surfaces

    Science.gov (United States)

    Gordon, Keith; Rutherford, Gugu; Aranda, Denisse

    2017-01-01

    Nonvolatile residue (NVR), sometimes referred to as molecular contamination is the term used for the total composition of the inorganic and high boiling point organic components in particulates and molecular films deposited on critical surfaces surrounding space structures, with the particulate and NVR contamination originating primarily from pre-launch operations. The "nonvolatile" suggestion from the terminology NVR implies that the collected residue will not experience much loss under ambient conditions. NVR has been shown to have a dramatic impact on the ability to perform optical measurements from platforms based in space. Such contaminants can be detected early by the controlled application of various detection techniques and contamination analyses. Contamination analyses are the techniques used to determine if materials, components, and subsystems can be expected to meet the performance requirements of a system. Of particular concern is the quantity of NVR contaminants that might be deposited on critical payload surfaces from these sources. Subsequent chemical analysis of the contaminant samples by infrared spectroscopy and gas chromatography mass spectrometry identifies the components, gives semi-quantitative estimates of contaminant thickness, indicates possible sources of the NVR, and provides guidance for effective cleanup procedures. In this report, a method for the collection and determination of the mass of NVR was generated by the authors at NASA Langley Research Center. This report describes the method developed and implemented for collecting NVR contaminants, and procedures for gravimetric and chemical analysis of the residue obtained. The result of this NVR analysis collaboration will help pave the way for Langley's ability to certify flight hardware outgassing requirements in support of flight projects such as Stratospheric Aerosol and Gas Experiment III (SAGE III), Clouds and the Earth's Radiant Energy System (CERES), Materials International

  19. Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids.

    Science.gov (United States)

    Lin, Hongbin; Yu, Xiaoyu; Fang, Jiaxing; Lu, Yunhao; Liu, Ping; Xing, Yage; Wang, Qin; Che, Zhenming; He, Qiang

    2018-05-29

    Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC). Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln), glutamic acid (Glu), aspartic acid (Asp) and asparagines (Asn) were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

  20. Development of novel nonvolatile memory devices using the colossal magnetoresistive oxide praseodymium-calcium-manganese trioxide

    Science.gov (United States)

    Papagianni, Christina

    Pr0.7Ca0.3MnO3 (PCMO) manganese oxide belongs in the family of materials known as transition metal oxides. These compounds have received increased attention due to their perplexing properties such as Colossal Magnetoresistance effect, Charge-Ordered phase, existence of phase-separated states etc. In addition, it was recently discovered that short electrical pulses in amplitude and duration are sufficient to induce reversible and non-volatile resistance changes in manganese perovskite oxide thin films at room temperature, known as the EPIR effect. The existence of the EPIR effect in PCMO thin films at room temperature opens a viable way for the realization of fast, high-density, low power non-volatile memory devices in the near future. The purpose of this study is to investigate, optimize and understand the properties of Pr0.7Ca0.3MnO 3 (PCMO) thin film devices and to identify how these properties affect the EPIR effect. PCMO thin films were deposited on various substrates, such as metals, and conducting and insulating oxides, by pulsed laser and radio frequency sputtering methods. Our objective was to understand and compare the induced resistive states. We attempted to identify the induced resistance changes by considering two resistive models to be equivalent to our devices. Impedance spectroscopy was also utilized in a wide temperature range that was extended down to 70K. Fitted results of the temperature dependence of the resistance states were also included in this study. In the same temperature range, we probed the resistance changes in PCMO thin films and we examined whether the phase transitions affect the EPIR effect. In addition, we included a comparison of devices with electrodes consisting of different size and different materials. We demonstrated a direct relation between the EPIR effect and the phase diagram of bulk PCMO samples. A model that could account for the observed EPIR effect is presented.

  1. Ghana's nuclear programme

    International Nuclear Information System (INIS)

    Ahafia, Albert K.

    1988-01-01

    The Paper gives the purpose of Ghana's Nuclear Programme and describes some specific research activities and peaceful applications of atomic energy in agriculture, medicine and industry. A discussion of some of the problem facing the programme concludes the Paper. (author)

  2. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  3. Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

  4. A Humidity-Dependent Lifetime Derating Factor for DC Film Capacitors

    DEFF Research Database (Denmark)

    Wang, Huai; Reigosa, Paula Diaz; Blaabjerg, Frede

    2015-01-01

    accelerated testing of film capacitors under different humidity conditions, enabling a more justified lifetime prediction of film capacitors for DC-link applications under specific climatic environments. The analysis of the testing results and the detailed discussion on the derating factor with different......Film capacitors are widely assumed to have superior reliability performance than Aluminum electrolytic capacitors in DC-link design of power electronic converters. However, the assumption needs to be critically judged especially for applications under high humidity environments. This paper proposes...... a humidity-dependent lifetime derating factor for a type of plastic-boxed metallized DC film capacitors. It overcomes the limitation that the humidity impact is not considered in the state-of-the-art DC film capacitor lifetime models. The lifetime derating factor is obtained based on a total of 8,700 hours...

  5. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

    2012-01-01

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  6. An Active Capacitor with Self-Power and Internal Feedback Control Signals

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai

    2017-01-01

    This paper proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. A control strategy that does not require any external feedback...... signal is proposed and a self-power scheme for gate drivers and the controller is applied to achieve the two-terminal active capacitor. The concept, control method, self-power scheme, efficiency, and impedance characteristics of the active capacitor are presented. A case study of the proposed active...... capacitor for a capacitive DC-link application is discussed. The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify...

  7. A Robust DC-Split-Capacitor Power Decoupling Scheme for Single-Phase Converter

    DEFF Research Database (Denmark)

    Yao, Wenli; Loh, Poh Chiang; Tang, Yi

    2017-01-01

    Instead of bulky electrolytic capacitors, active power decoupling circuit can be introduced to a single-phase converter for diverting second harmonic ripple away from its dc source or load. One possible circuit consists of a half-bridge and two capacitors in series for forming a dc-split capacitor......, instead of the usual single dc-link capacitor bank. Methods for regulating this power decoupler have earlier been developed, but almost always with equal capacitances assumed for forming the dc-split capacitor, even though it is not realistic in practice. The assumption should, hence, be evaluated more...... thoroughly, especially when it is shown in the paper that even a slight mismatch can render the power decoupling scheme ineffective and the IEEE 1547 standard to be breached. A more robust compensation scheme is, thus, needed for the dc-split capacitor circuit, as proposed and tested experimentally...

  8. The Winfrith DSN programme

    International Nuclear Information System (INIS)

    Francescon, S.

    1963-05-01

    The programme, which is written in the Fortran language, solves the Carlson discrete S n approximation to the Boltzmann transport equation in cylindrical geometry. This report describes the input and output facilities of the WINFRITH DSN programme and the associated editing programme WED. (author)

  9. The Winfrith DSN programme

    Energy Technology Data Exchange (ETDEWEB)

    Francescon, S [General Reactor Physics Division, Atomic Energy Establishment, Winfrith, Dorchester, Dorset (United Kingdom)

    1963-05-15

    The programme, which is written in the Fortran language, solves the Carlson discrete S{sub n} approximation to the Boltzmann transport equation in cylindrical geometry. This report describes the input and output facilities of the WINFRITH DSN programme and the associated editing programme WED. (author)

  10. UNESCO's Ethics Education Programme.

    NARCIS (Netherlands)

    Have, H.A.M.J. ten

    2008-01-01

    Unesco initiated the Ethics Education Programme in 2004 at the request of member states to reinforce and increase the capacities in the area of ethics teaching. The programme is focused on providing detailed information about existing teaching programmes. It also develops and promotes teaching

  11. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  12. Neural network for optimal capacitor placement and its impact on power quality in electric distribution systems

    International Nuclear Information System (INIS)

    Mohamed, A.A.E.S.

    2013-01-01

    Capacitors are widely installed in distribution systems for reactive power compensation to achieve power and energy loss reduction, voltage regulation and system capacity release. The extent of these benefits depends greatly on how the capacitors are placed on the system. The problem of how to place capacitors on the system such that these benefits are achieved and maximized against the cost associated with the capacitor placement is termed the general capacitor placement problem. The capacitor placement problem has been formulated as the maximization of the savings resulted from reduction in both peak power and energy losses considering capacitor installation cost and maintaining the buses voltage within acceptable limits. After an appropriate analysis, the optimization problem was formulated in a quadratic form. For solving capacitor placement a new combinatorial heuristic and quadratic programming technique has been presented and applied in the MATLAB software. The proposed strategy was applied on two different radial distribution feeders. The results have been compared with previous works. The comparison showed the validity and the effectiveness of this strategy. Secondly, two artificial intelligence techniques for predicting the capacitor switching state in radial distribution feeders have been investigated; one is based on basis Radial Basis Neural Network (RBNN) and the other is based on Adaptive Neuro-Fuzzy Inference System (ANFIS). The ANFIS technique gives better results with a minimum total error compared to RBNN. The learning duration of ANFIS was very short than the neural network case. It implied that ANFIS reaches to the target faster than neural network. Thirdly, an artificial intelligence (RBNN) approach for estimation of transient overvoltage during capacitor switching has been studied. The artificial intelligence approach estimated the transient overvoltages with a minimum error in a short computational time. Finally, a capacitor switching

  13. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    DEFF Research Database (Denmark)

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

  14. Incorporation of distributed generation and shunt capacitor in radial distribution system for techno-economic benefits

    Directory of Open Access Journals (Sweden)

    Mukul Dixit

    2017-04-01

    The various costs such as purchase active power from grid, DG installation, capacitor installation, DG Operation and Maintenance (O&M are evaluated at two different load scenarios. In addition to that, technical and economical analyses are examined for various combinations of DGs and shunt capacitors. The proposed methodology is successfully demonstrated on 33-bus and 85-bus radial networks and the obtained numerical outcomes validate the suitability, importance and effectiveness to identify locations as well as sizes of DGs and shunt capacitors.

  15. Effect of capacitor loss on discharging characteristics of xenon flash lamp

    International Nuclear Information System (INIS)

    Zhang Chu; Lin Dejiang; Xu Chunmei; Shen Hongbin; Chen Xiaohan

    2012-01-01

    The effect of storage capacitor's loss on the discharging characteristics of the xenon flash lamp was studied, and the xenon flash lamp discharging circuit was analyzed and improved. The capacitor can be equivalent to a series of an ideal capacitor and loss resistance. The improved formula of the xenon lamp discharging characteristics was given when actual capacitance loss is not zero, and the xenon lamp discharging current and discharging power are calculated and analyzed in detail with the increase of the capacitor loss. The results show that the increase of loss will lead to the decrease of xenon lamp discharging current and peak power and the xenon lamp flash time, and influence laser pumping efficiency. The loss will also lead to the capacitor inverse charging in LC discharging circuit; this will influence normal working of the capacitor and decrease the lift of the xenon lamp. The actual energy storage capacitor charging and discharging experiments show that the increase of capacitor loss will lead to the decrease of xenon lamp light-emitting waveform peak, shortening of the flash time and increase of the electrode sputter, thus verity, the reasonableness of theoretical analysis. In addition, the experiments show that environmental factors have very significant impact on the increase of the storage capacitor loss. (authors)

  16. A Novel Flying Capacitor Transformerless Inverter for Single-Phase Grid Connected Solar Photovoltaic System

    DEFF Research Database (Denmark)

    Siwakoti, Yam Prasad; Blaabjerg, Frede

    2016-01-01

    This paper proposes a new single-phase flying capacitor transformerless PV inverter for grid-connected photovoltaic (PV) systems. The neutral of the grid can be directly connected to the negative terminal of the source (PV). It consists of four power switches, one diode, one capacitor and a small...... and some topologies, which requires two times of the peak ac-voltage magnitude) and, (5) the flying capacitor charges every switching cycle, which reduces the size of the required capacitor with switching frequency. In addition, industry standard half bridge module can be used in the new inverter without...

  17. Enhanced DC-Link Capacitor Voltage Balancing Control of DC–AC Multilevel Multileg Converters

    DEFF Research Database (Denmark)

    Busquets-Monge, Sergio; Maheshwari, Ram Krishan; Nicolas-Apruzzese, Joan

    2015-01-01

    This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc-link vol......This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc...

  18. Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

    International Nuclear Information System (INIS)

    Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

    2014-01-01

    The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

  19. Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

    International Nuclear Information System (INIS)

    Malekie, Shahryar; Salehpour, Behrooz

    2017-01-01

    In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

  20. A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link.

    Science.gov (United States)

    Lee, Hyung-Min; Ghovanloo, Maysam

    2013-10-01

    A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35- μ m 4-metal 2-poly standard CMOS process in 2.1 mm 2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μ F capacitors up to ±2 V in 420 μ s, achieving a high measured charging efficiency of 82%.

  1. Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Malekie, Shahryar [Nuclear Science and Technology Research Institute, Karaj (Iran, Islamic Republic of). Radiation Application Research School; Salehpour, Behrooz [Tabriz Univ. (Iran, Islamic Republic of). Faculty of Physics

    2017-09-01

    In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

  2. Device for detecting imminent failure of high-dielectric stress capacitors. [Patent application

    Science.gov (United States)

    McDuff, G.G.

    1980-11-05

    A device is described for detecting imminent failure of a high-dielectric stress capacitor utilizing circuitry for detecting pulse width variations and pulse magnitude variations. Inexpensive microprocessor circuitry is utilized to make numerical calculations of digital data supplied by detection circuitry for comparison of pulse width data and magnitude data to determine if preselected ranges have been exceeded, thereby indicating imminent failure of a capacitor. Detection circuitry may be incorporated in transmission lines, pulse power circuitry, including laser pulse circuitry or any circuitry where capacitors or capacitor banks are utilized.

  3. Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

  4. Capacitor Mismatch Error Cancellation Technique for a Successive Approximation A/D Converter

    DEFF Research Database (Denmark)

    Zheng, Zhiliang; Moon, Un-Ku; Steensgaard-Madsen, Jesper

    1999-01-01

    An error cancellation technique is described for suppressing capacitor mismatch in a successive approximation A/D converter. At the cost of a 50% increase in conversion time, the first-order capacitor mismatch error is cancelled. Methods for achieving top-plate parasitic insensitive operation...... are described, and the use of a gain- and offset-compensated opamp is explained. SWITCAP simulation results show that the proposed 16-bit SAR ADC can achieve an SNDR of over 91 dB under non-ideal conditions, including 1% 3 sigma nominal capacitor mismatch, 10-20% randomized parasitic capacitors, 66 dB opamp...

  5. Capacitor voltage ripple reduction and arm energy balancing in MMC-HVDC

    DEFF Research Database (Denmark)

    Parikh, Harsh; Martin-Loeches, Ruben Sánches; Tsolaridis, Georgios

    2016-01-01

    Modular Multilevel Converters are emerging and widely used in HVDC applications. However, the submodule capacitors are still large and the energy balancing under unbalanced conditions is a challenge. In this paper, an analytical model focusing on the energy stored in the capacitors and voltage...... variations is utilized in order to achieve better performance. By injecting a second order harmonic component into the circulating current, the energy variation and consequently the capacitor voltage ripple is reduced allowing for a capacitor size reduction. At the same time, an arm energy balancing...

  6. Laboratory Validation of Four Black Carbon Measurement Methods for Determination of the Nonvolatile Particulate Matter (nvPM) Mass Emissions from Commercial Aircraft Engines

    Science.gov (United States)

    Four candidate black carbon (BC) measurement techniques have been identified by the SAE International E-31 Committee for possible use in determining nonvolatile particulate matter (nvPM) mass emissions during commercial aircraft engine certification. These techniques are carbon b...

  7. EPA Method 8321B (SW-846): Solvent-Extractable Nonvolatile Compounds by High Performance Liquid Chromatography-Thermospray-Mass Spectrometry (HPLC-TS-MS) or Ultraviolet (UV) Detection

    Science.gov (United States)

    Method 8321B describes procedures for preparation and analysis of solid, aqueous liquid, drinking water and wipe samples using high performance liquid chromatography and mass spectrometry for extractable non-volatile compounds.

  8. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  9. Electrically and thermally activated ageing mechanisms in metallised polymer film capacitors

    International Nuclear Information System (INIS)

    Lee, Yuen Pen

    2001-01-01

    This dissertation describes a combined computational and experimental study to understand the fundamental electrostatic, thermal, electromagnetic, and discharge related processes during the ageing of metallised polymer film capacitors. In the event of internal breakdowns, these capacitors are capable of 'self-healing' through a controlled isolation of defects on the electrode surfaces by mosaic patterning the electrode. The objective of this project is to develop viable computer models to unravel electrothermally activated ageing processes in capacitors. To provide the necessary validation to any capacitor models developed, our work is supported by comprehensive experiments including industrial standard accelerated life tests and associated breakdown damage analyses of tested capacitors. These have enabled an empirical identification of main factors affecting the reliability and lifetime of capacitors. Relevant raw data and the qualitative picture enabled by these data are crucial to the development and refinement of viable computational models of capacitors. Given the complexity of ageing processes, it is both very difficult and unnecessary to develop a one-for-all model that describes indiscriminately all relevant processes. The approach adapted in this work has been to prioritise key ageing processes and modularise each process with its own computer model. The overall picture of capacitor ageing can then be unravelled by integrating all modules together. For instance, the fine geometrical features of the electrode mosaic pattern and the capacitor's laminated structure have been assessed through a concept of field intensification using a 2D electrostatic finite element computation. With fine geometrical features accounted for by the field intensification concept, fast electric events in capacitors can be simulated using a simple equivalent circuit model. Similar assessment of heat transfer has led to an equally efficient modelling of thermal events in capacitors

  10. Anti-Ferroelectric Ceramics for High Energy Density Capacitors

    Directory of Open Access Journals (Sweden)

    Aditya Chauhan

    2015-11-01

    Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

  11. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  12. Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

    Science.gov (United States)

    Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

    2012-09-01

    Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

  13. Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

    Science.gov (United States)

    Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

    2018-01-01

    In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

  14. Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

    Directory of Open Access Journals (Sweden)

    Krystyna Przybył

    2011-01-01

    Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

  15. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  16. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  17. Volatile and non-volatile compounds in green tea affected in harvesting time and their correlation to consumer preference.

    Science.gov (United States)

    Kim, Youngmok; Lee, Kwang-Geun; Kim, Mina K

    2016-10-01

    Current study was designed to find out how tea harvesting time affects the volatile and non-volatile compounds profiles of green tea. In addition, correlation of instrumental volatile and non-volatile compounds analyses to consumer perception were analyzed. Overall, earlier harvested green tea had stronger antioxidant capacity (~61.0%) due to the polyphenolic compounds from catechin (23,164 mg/L), in comparison to later harvested green teas (11,961 mg/L). However, high catechin content in green tea influenced negatively the consumer likings of green tea, due to high bitterness (27.6%) and astringency (13.4%). Volatile compounds drive consumer liking of green tea products were also identified, that included linalool, 2,3-methyl butanal, 2-heptanone, (E,E)-3,5-Octadien-2-one. Finding from current study are useful for green tea industry as it provide the difference in physiochemical properties of green tea harvested at different intervals.

  18. Repetitively pulsed capacitor bank for the dense-plasma focus

    International Nuclear Information System (INIS)

    Zucker, O.; Bostick, W.; Gullickson, R.; Long, J.; Luce, J.; Sahlin, H.

    1975-12-01

    This report describes a 1 pulse per second capacitor bank designed to energize a dense-plasma focus (DPF). The DPF is a neutron source capable (with moderate scaling) of delivering a minimum of 10 15 neutrons per pulse or neutron flux of 2 x 10 13 N/cm 2 .s. The average power consumption, which has become a major issue due to the energy crisis, is analyzed with respect to other plasma devices and is shown to be highly favorable. This small source size high flux neutron source could be extemely useful to qualify fission reactor material irradiation results for fusion reactor design

  19. Current Control of Grid Converters Connected with Series AC Capacitor

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Blaabjerg, Frede; Loh, Poh Chiang

    2015-01-01

    The series ac capacitor has recently been used with the transformerless grid-connected converters in the distribution power grids. The capacitive characteristic of the resulting series LC filter restricts the use of conventional synchronous integral or stationary resonant current controllers. Thus...... this paper proposes a fourth-order resonant controller in the stationary frame, which guarantees a zero steady-state current tracking error for the grid converters with series LC filter. This method is then implemented in a three-phase experimental system for verification, where the current harmonics below...... the LC filter resonance frequency are effectively eliminated. Experimental results confirm the validity of the proposed current control scheme....

  20. The quantum to classical crossover for a weak link capacitor

    International Nuclear Information System (INIS)

    Spiller, T.P.; Clark, T.D.; Prance, H.; Prance, R.J.

    1995-01-01

    We consider a model weak link, an ultra-small capacitor subject to tunnelling, to ohmic dissipation and fed with an external displacement current. The framework we employ is the new approach of quantum state diffusion, which treats individual open quantum systems as well as being able to generate the conventional ensemble averages. We show how evidence, for archetypal quantum behaviour (coherent oscillations) and archetypal classical behaviour (chaos) arises, for weak links whose parameters are related by a rather modest scaling. Interestingly, the quantum behaviour can arise for a weak link with intrinsic parameter values such that it could exhibit chaos, if it were a purely classical device

  1. Neural Implants, Packaging for Biocompatible Implants, and Improving Fabricated Capacitors

    Science.gov (United States)

    Agger, Elizabeth Rose

    We have completed the circuit design and packaging procedure for an NIH-funded neural implant, called a MOTE (Microscale Optoelectronically Transduced Electrode). Neural recording implants for mice have greatly advanced neuroscience, but they are often damaging and limited in their recording location. This project will result in free-floating implants that cause less damage, provide rapid electronic recording, and increase range of recording across the cortex. A low-power silicon IC containing amplification and digitization sub-circuits is powered by a dual-function gallium arsenide photovoltaic and LED. Through thin film deposition, photolithography, and chemical and physical etching, the Molnar Group and the McEuen Group (Applied and Engineering Physics department) will package the IC and LED into a biocompatible implant approximately 100microm3. The IC and LED are complete and we have begun refining this packaging procedure in the Cornell NanoScale Science & Technology Facility. ICs with 3D time-resolved imaging capabilities can image microorganisms and other biological samples given proper packaging. A portable, flat, easily manufactured package would enable scientists to place biological samples on slides directly above the Molnar group's imaging chip. We have developed a packaging procedure using laser cutting, photolithography, epoxies, and metal deposition. Using a flip-chip method, we verified the process by aligning and adhering a sample chip to a holder wafer. In the CNF, we have worked on a long-term metal-insulator-metal (MIM) capacitor characterization project. Former Fellow and continuing CNF user Kwame Amponsah developed the original procedure for the capacitor fabrication, and another former fellow, Jonilyn Longenecker, revised the procedure and began the arduous process of characterization. MIM caps are useful to clean room users as testing devices to verify electronic characteristics of their active circuitry. This project's objective is to

  2. Electric drive systems including smoothing capacitor cooling devices and systems

    Energy Technology Data Exchange (ETDEWEB)

    Dede, Ercan Mehmet; Zhou, Feng

    2017-02-28

    An electric drive system includes a smoothing capacitor including at least one terminal, a bus bar electrically coupled to the at least one terminal, a thermoelectric device including a first side and a second side positioned opposite the first side, where the first side is thermally coupled to at least one of the at least one terminal and the bus bar, and a cooling element thermally coupled to the second side of the thermoelectric device, where the cooling element dissipates heat from the thermoelectric device.

  3. Electronic inverter assembly with an integral snubber capacitor

    Science.gov (United States)

    Singh, Brij N.; Schmit, Christopher J.

    2017-08-01

    A coaxial bus connector has a first end and a second end opposite the first end. The first end has a first positive terminal and a first negative terminal coupled to a primary direct current bus of a primary inverter. The second end has a second positive terminal and a second negative terminal coupled to the secondary direct current bus of a secondary inverter, wherein the coaxial bus connector comprises a dielectric material between a center conductor and a coaxial sleeve to form a snubber capacitor to absorb electrical energy or to absorb voltage spikes.

  4. High speed capacitor-inverter based carbon nanotube full adder.

    Science.gov (United States)

    Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

    2010-03-18

    Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

  5. THE DIAGNOSIS TECHNIQUE OF ABNORMAL HEATING OF POWER CAPACITORS

    Directory of Open Access Journals (Sweden)

    D. I. Zalizny

    2016-01-01

    Full Text Available The existing system of protection and diagnostics are not able to detect abnormal heating of the power capacitors caused by its internal malfunction formation. The paper contains a proposal of a technique that enables to detect such heat at its early study. This technique consists of a hardware and an algorithms. The hardware consists of a microprocessor-based instrument developed by the author, of measuring transformers of current and of temperature sensors. This equipment must be connected to the condenser unit with a rated voltage of 380 V. In operation, the device performs continuous measurement of the surface temperature of the casing of each condenser, the temperature of the external environment, voltage and current from the power source. The measured values are used in the mathematical model of thermal processes that enables to calculate the temperature of the hottest point of each capacitor in real-time. Then the calculation of the intrinsic difference ΔΘ1° between the average temperature values of the dielectric and the base average value of this temperatures during the second day from the start of the measurements. If the Dq1 value exceeds the value of the absolute error of simulation, diagnostic signals of abnormal levels of heating, viz. low, medium, high and very high, are generated. It is also necessary to calculate the rate of change of ΔΘ1° and to consider the values obtained in the formation of hazard levels. For the low level and the average level of hazard the operation of diagnostic system with a visual signal is recommended, while for the high level of hazard it is recommended to use both visual and sound signals, and for the very high hazard level the capacitor ought to be turned off from the source. The algorithms have been developed heuristically. The final formation of the algorithms is possible only after the long-term operation of the proposed diagnosis system on real objects. The implementation of the

  6. Capacitors on the basis of intercalate GaSe

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2010-06-01

    Full Text Available The compound GaSe is obtained by the technique of intercalation of a GaSe single crystal in a melt of the ferroelectric salt KNO3. The x-ray analysis of its crystal structure has been carried out and dielectric frequency characteristics of samples has been measured. It is estab-lished, that accumulation of electric charges occurs in the examined examples in frequency area 100—1000 Hz. A sample of filter capacitor has been created on the basis of the re-ceived compounds.

  7. Graphene-Based Flexible and Transparent Tunable Capacitors

    OpenAIRE

    Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

    2015-01-01

    We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By...

  8. High energy density, long life energy storage capacitor dielectric system

    International Nuclear Information System (INIS)

    Nichols, D.H.; Wilson, S.R.

    1977-01-01

    The evolution of energy storage dielectric systems shows a dramatic improvement in life and joule density, culminating in a 50% to 300% life improvement of polypropylene film-paper-phthalate ester over paper-castor oil depending on service. The physical and electrical drawbacks of castor oil are not present in the new system, allowing the capacitor designer to utilize the superior insulation resistance, dielectric strength, and corona resistance to full advantage. The result is longer life for equal joule density or greater joule density for equal life. Field service proof of the film-Geconol system superiority is based on 5 megajoule in operation and 16 megajoule on order

  9. Repetitively pulsed capacitor bank for the dense-plasma focus

    International Nuclear Information System (INIS)

    Zucker, O.; Bostick, W.; Gullickson, R.; Long, J.; Luce, J.; Sahlin, H.

    1976-01-01

    This report describes a 1 pulse per second capacitor bank designed to energize a dense-plasma focus (DPF). The DPF is a neutron source capable (with moderate scaling) of delivering a minimum of 10 15 neutrons per pulse or neutron flux of 2 x 10 13 N/cm 2 . s. The average power consumption, which has become a major issue due to the energy crisis, is analyzed with respect to other plasma devices and is shown to be highly favorable. This small source size high flux neutron source could be extremely useful to qualify fission reactor material irradiation results for fusion reactor design

  10. A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

    OpenAIRE

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

  11. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    Science.gov (United States)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  12. Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

    KAUST Repository

    Elshurafa, Amro M.; Salama, Khaled N.

    2012-01-01

    In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single

  13. Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

    KAUST Repository

    Elshurafa, Amro M.

    2012-07-23

    In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single-layer MEMS fractal capacitors. Explicitly, a capacitor with a woven structure and another with an interleaved configuration were fabricated in the standard PolyMUMPS surface micromachining process and tested at S-band frequencies. The self-resonant frequencies of the fabricated capacitors were close to 10GHz, which is better than that of the parallel-plate capacitor, which measured only 5.5GHz. Further, the presented capacitors provided a higher capacitance when compared with the state-of-the-art-reported MEMS fractal capacitors created using a single layer at the expense of a lower quality factor. © 2012 The Institution of Engineering and Technology.

  14. Process Optimization of P(VDF-TrFE)-BaTiO3 Nanocomposites for Storage Capacitor Applications

    KAUST Repository

    Almadhoun, Mahmoud N.

    2011-01-01

    are considered to be one possible solution towards the fabrication of high energy density capacitors, whether as embedded capacitors or gate insulators in organic field effect transistors (OFETs). Selecting high permittivity ceramics mixed with polymers with high

  15. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  16. Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

    International Nuclear Information System (INIS)

    Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

    2012-01-01

    A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

  17. Simulation and analysis of transient over voltages due to capacitor banks switching

    International Nuclear Information System (INIS)

    Jadid, Sh.; Yazdanpanah, D.

    2002-01-01

    The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

  18. A Different Approach to Studying the Charge and Discharge of a Capacitor without an Oscilloscope

    Science.gov (United States)

    Ladino, L. A.

    2013-01-01

    A different method to study the charging and discharging processes of a capacitor is presented. The method only requires a high impedance voltmeter. The charging and discharging processes of a capacitor are usually studied experimentally using an oscilloscope and, therefore, both processes are studied as a function of time. The approach presented…

  19. The Most Energy Efficient Way to Charge the Capacitor in an RC Circuit

    Science.gov (United States)

    Wang, Dake

    2017-01-01

    The voltage waveform that minimizes the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and…

  20. A 800 kV compact peaking capacitor for nanosecond generator.

    Science.gov (United States)

    Jia, Wei; Chen, Zhiqiang; Tang, Junping; Chen, Weiqing; Guo, Fan; Sun, Fengrong; Li, Junna; Qiu, Aici

    2014-09-01

    An extremely compact high voltage peaking capacitor is developed. The capacitor has a pancake structure with a diameter of 315 mm, a thickness of 59 mm, and a mass of 6.1 kg. The novel structural design endows the capacitor with a better mechanical stability and reliability under hundreds of kilovolts pulse voltage and an inner gas pressure of more than 1.5 MPa. The theoretical value of the capacitor self-inductance is near to 17 nH. Proved by series of electrical experiments, the capacitor can endure a high-voltage pulse with a rise time of about 20 ns, a half-width duration of around 25 ns, and an amplitude of up to 800 kV in a single shot model. When the capacitor was used in an electromagnetic pulse simulator as a peaking capacitor, the rise time of the voltage pulse can be reduced from 20 ns to less than 3 ns. The practical value of the capacitor's inductance deduced from the experimental date is no more than 25 nH.