An inkjet-printed UWB antenna on paper substrate utilizing a novel fractal matching network

KAUST Repository

Cook, Benjamin Stassen

2012-07-01

In this work, the smallest reported inkjet-printed UWB antenna is proposed that utilizes a fractal matching network to increase the performance of a UWB microstrip monopole. The antenna is inkjet-printed on a paper substrate to demonstrate the ability to produce small and low-cost UWB antennas with inkjet-printing technology which can enable compact, low-cost, and environmentally friendly wireless sensor network. © 2012 IEEE.

On one-loop corrections to matching conditions of lattice HQET including 1/m{sub b} terms

Energy Technology Data Exchange (ETDEWEB)

Korcyl, Piotr [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

2013-12-15

HQET is an effective theory for QCD with N{sub f} light quarks and a massive valence quark if the mass of the latter is much bigger than LQCD. As any effective theory, HQET is predictive only when a set of parameters has been determined through a process called matching. The non-perturbative matching procedure including 1/m{sub b} terms, developed by the ALPHA collaboration, consists of 19 carefully chosen observables which are precisely computable in lattice QCD as well as in lattice HQET. The matching conditions are then a set of 19 equations which relate the QCD and HQET values of these observables. We present a study of one-loop corrections to two generic matching observables involving correlation function with an insertion of the A{sub 0} operator. Our results enable us to quantify the quality of the relevant observables in view of the envisaged nonperturbative implementation of this matching procedure.

Quantum Solitons and Localized Modes in a One-Dimensional Lattice Chain with Nonlinear Substrate Potential

International Nuclear Information System (INIS)

Li Dejun; Mi Xianwu; Deng Ke; Tang Yi

2006-01-01

In the classical lattice theory, solitons and localized modes can exist in many one-dimensional nonlinear lattice chains, however, in the quantum lattice theory, whether quantum solitons and localized modes can exist or not in the one-dimensional lattice chains is an interesting problem. By using the number state method and the Hartree approximation combined with the method of multiple scales, we investigate quantum solitons and localized modes in a one-dimensional lattice chain with the nonlinear substrate potential. It is shown that quantum solitons do exist in this nonlinear lattice chain, and at the boundary of the phonon Brillouin zone, quantum solitons become quantum localized modes, phonons are pinned to the lattice of the vicinity at the central position j = j 0 .

Influence of the Substrate Properties on the Offset Printing ink Colour Matching

Directory of Open Access Journals (Sweden)

Anne Blayo

2003-07-01

Full Text Available The printing industry has been using computerised ink colour matching for a long time. The problem of ink formulation is to match a given standard colour with only three or four inks from a basis of about twelve inks.This is generally achieved by calculations based on the well-known Kubelka-Munk turbid media theory, which gives excellent results in many industrial situations. However, some hypotheses are necessary to apply the Kubelka-Munk model and corrections to the measured reflectance are often required (Saunderson’s correction coefficients, for example.One limitation in the resolution of this method of formulation may arise from the fact that the characterisation of the basic inks is made on one standard substrate, which may differ a lot from the real printing substrate.The aim of this work is precisely to study the contribution of the substrate to the colour matching procedure. The properties of the substrate which intervene in the process are physical properties (thickness, absorbency… and optical properties (brightness and gloss. Five different papers were chosen to make the characterisations of the basic offset inks. The reflectance measurements were performed with spectrophotometer X-Rite with the D/0° geometry, specular excluded or included, coupled with a coloured matching software (X-Rite Inkmaster. A special emphasis was put on the influence on the calculation of the ink film thickness, estimated for the different substrates, and on the choice of the correction coefficients for the Kubelka-Munk theory.

Crystalline and lattice matched Ba0.7Si0.3O layers on plane and vicinal Si(001) surfaces

International Nuclear Information System (INIS)

Zachariae, J.

2006-01-01

In this work the low temperature growth conditions of epitaxial and lattice-matched Ba 0.7 Sr 0.3 O layers on Si(100) were investigated using the combination of low energy electron diffraction (LEED), x-ray photoemission (XPS) and electron energy loss spectroscopy (EELS). With these methods crystallinity, stoichiometry and electronic structure of both occupied and unoccupied levels were studied as a function of layer thickness. Oxide layers were generated by evaporating the metals in oxygen ambient pressure with the sample at room temperature. Perfect crystallinity and lattice matching was only obtained starting with a preadsorbed monolayer (ML) of Sr or Ba at a concentration close to one monolayer. The XPS analysis shows that Ba 0.7 Sr 0.3 O as a high-K gate dielectric offers an adequate band gap, an appropriate band alignment and a atomically sharp interface to the Si(001) substrate. No silicide and silicate species, or SiO 2 formation at the interface after oxidation were found. To show that Ba 0.7 Sr 0.3 O is really appropriate to replace SiO 2 as a gate dielectric, first C-V and I-V curves of MOS-diodes with SrO, BaO and Ba 0.7 Sr 0.3 O as gateoxide were measured under ambient conditions. Besides other results, it turns out that the measured dielectric constant of Ba 0.7 Sr 0.3 O conforms with the expected value of ε ∼ 25 - 30. Exploring ways for self-organized structuring of insulating films, the possibility to produce replicas of step trains, given by a vicinal Si(001)-4 [110] surface, in layers of crystalline and perfectly lattice matched Ba 0.7 Sr 0.3 O were investigated. For this purpose high-resolution spot profile analyses in low-energy electron diffraction (SPA-LEED) both on flat Si(001) and on vicinal Si(001)-4 [110] were carried out. The G(S) analysis of these mixed oxide layers reveals a strong influence of local compositional fluctuations of Sr and Ba ions and their respective scattering phases, which appears as an unphysically large variation

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

K. Jeganathan

2014-09-01

Full Text Available We investigate the role of growth temperature on the optimization of lattice-matched In0.17Al0.83N/GaN heterostructure and its structural evolutions along with electrical transport studies. The indium content gradually reduces with the increase of growth temperature and approaches lattice-matched with GaN having very smooth and high structural quality at 450ºC. The InAlN layers grown at high growth temperature (480ºC retain very low Indium content of ∼ 4 % in which cracks are mushroomed due to tensile strain while above lattice matched (>17% layers maintain crack-free compressive strain nature. The near lattice-matched heterostructure demonstrate a strong carrier confinement with very high two-dimensional sheet carrier density of ∼2.9 × 1013 cm−2 with the sheet resistance of ∼450 Ω/□ at room temperature as due to the manifestation of spontaneous polarization charge differences between InAlN and GaN layers.

A signal-substrate match in the substrate-borne component of a multimodal courtship display

Directory of Open Access Journals (Sweden)

Damian O. ELIAS, Andrew C. MASON, Eileen A. HEBETS

2010-06-01

Full Text Available The environment can impose strong limitations on the efficacy of signal transmission. In particular, for vibratory communication, the signaling environment is often extremely heterogeneous at very small scales. Nevertheless, natural selection is expected to select for signals well-suited to effective transmission. Here, we test for substrate-dependent signal efficacy in the wolf spider Schizocosa stridulans Stratton 1991. We first explore the transmission characteristics of this important signaling modality by playing recorded substrate-borne signals through three different substrates (leaf litter, pine litter, and red clay and measuring the propagated signal. We found that the substrate-borne signal of S. stridulans attenuates the least on leaf litter, the substrate upon which the species is naturally found. Next, by assessing mating success with artificially muted and non-muted males across different signaling substrates (leaf litter, pine litter, and sand, we explored the relationship between substrate-borne signaling and substrate for mating success. We found that muted males were unsuccessful in obtaining copulations regardless of substrate, while mating success was dependent on the signaling substrate for non-muted males. For non-muted males, more males copulated on leaf litter than any other substrate. Taken together, these results confirm the importance of substrate-borne signaling in S. stridulans and suggest a match between signal properties and signal efficacy – leaf litter transmits the signal most effectively and males are most successful in obtaining copulations on leaf litter [Current Zoology 56 (3: 370–378, 2010].

Growth and characterization of InAlN layers nearly lattice-matched to GaN

International Nuclear Information System (INIS)

Manuel, J.M.; Morales, F.M.; Lozano, J.G.; Garcia, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.

2011-01-01

A set of InxAl1-xN films lattice-matched (LM) to GaN/sapphire substrates were grown by molecular beam epitaxy (MBE) and studied using X-ray diffraction and transmission electron microscopy with the aim of implementing barrier and channels in high electron mobility transistors (HEMTs). Although all InAlN epilayers grow pseudomorphic to GaN, two sublayers with different compositions formed when a direct deposition onto the bare GaN buffer was carried out. On the other hand, heterostructures having single-layered In∝0.18Al∝0.82N are achieved when a spacer consisting of an AlN interlayer or an AlN/GaN/AlN stack is placed between the InAlN and the buffer. These spacers not only yield a better compositional and structural homogeneity of the InAlN, but also improve electrical properties with respect to HEMT applications. Compared to one single AlN interlayer, the use of a triple AlN/GaN/AlN multilayer further improves the structural quality of the InAlN film (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Alloyed surfaces: New substrates for graphene growth

Science.gov (United States)

Tresca, C.; Verbitskiy, N. I.; Fedorov, A.; Grüneis, A.; Profeta, G.

2017-11-01

We report a systematic ab-initio density functional theory investigation of Ni(111) surface alloyed with elements of group IV (Si, Ge and Sn), demonstrating the possibility to use it to grow high quality graphene. Ni(111) surface represents an ideal substrate for graphene, due to its catalytic properties and perfect matching with the graphene lattice constant. However, Dirac bands of graphene growth on Ni(111) are completely destroyed due to the strong hybridization between carbon pz and Ni d orbitals. Group IV atoms, namely Si, Ge and Sn, once deposited on Ni(111) surface, form an ordered alloyed surface with √{ 3} ×√{ 3} -R30° reconstruction. We demonstrate that, at variance with the pure Ni(111) surface, alloyed surfaces effectively decouple graphene from the substrate, resulting unstrained due to the nearly perfect lattice matching and preserves linear Dirac bands without the strong hybridization with Ni d states. The proposed surfaces can be prepared before graphene growth without resorting on post-growth processes which necessarily alter the electronic and structural properties of graphene.

Substrate structures for InP-based devices

International Nuclear Information System (INIS)

Wanlass, M.W.; Sheldon, P.

1990-01-01

A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

Low-Cost Lattice Matching Si Based Composite Substrates for HgCdTe

Science.gov (United States)

2013-09-01

211). ..............................................5 Figure 3. Relationship between calculated alloy compositions based on Se/CdTe BEP ratio and...Se:CdTe beam equivalent pressure ( BEP ) ratios. During CdSeTe growth, Se and Te are in competition for the same nucleation sites. If we assume that all...therefore, x(cal) = ΦSe/ΦCd = 2ΦSe/ΦCdTe, where Φ is the BEP of the material, measured by the nude ion gauge at the substrate position. Figure 3 shows the

Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

Science.gov (United States)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1997-01-01

Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

California scrub-jays reduce visual cues available to potential pilferers by matching food colour to caching substrate.

Science.gov (United States)

Kelley, Laura A; Clayton, Nicola S

2017-07-01

Some animals hide food to consume later; however, these caches are susceptible to theft by conspecifics and heterospecifics. Caching animals can use protective strategies to minimize sensory cues available to potential pilferers, such as caching in shaded areas and in quiet substrate. Background matching (where object patterning matches the visual background) is commonly seen in prey animals to reduce conspicuousness, and caching animals may also use this tactic to hide caches, for example, by hiding coloured food in a similar coloured substrate. We tested whether California scrub-jays ( Aphelocoma californica ) camouflage their food in this way by offering them caching substrates that either matched or did not match the colour of food available for caching. We also determined whether this caching behaviour was sensitive to social context by allowing the birds to cache when a conspecific potential pilferer could be both heard and seen (acoustic and visual cues present), or unseen (acoustic cues only). When caching events could be both heard and seen by a potential pilferer, birds cached randomly in matching and non-matching substrates. However, they preferentially hid food in the substrate that matched the food colour when only acoustic cues were present. This is a novel cache protection strategy that also appears to be sensitive to social context. We conclude that studies of cache protection strategies should consider the perceptual capabilities of the cacher and potential pilferers. © 2017 The Author(s).

Performance of baker's yeast produced using date syrup substrate ...

African Journals Online (AJOL)

Baker's yeast was produced from three selected baker's yeast strains using date syrup as a substrate at low and high flow rate compared to those produced using molasses substrates. Performance of the produced baker's yeasts on Arabic bread quality was investigated. Baking tests showed a positive relationship between ...

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.; Cha, Dong Kyu; Alshareef, Husam N.

2011-01-01

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single

Effect of substrate rotation on domain structure and magnetic relaxation in magnetic antidot lattice arrays

International Nuclear Information System (INIS)

Mallick, Sougata; Mallik, Srijani; Bedanta, Subhankar

2015-01-01

Microdimensional triangular magnetic antidot lattice arrays were prepared by varying the speed of substrate rotation. The pre-deposition patterning has been performed using photolithography technique followed by a post-deposition lift-off. Surface morphology taken by atomic force microscopy depicted that the growth mechanism of the grains changes from chain like formation to island structures due to the substrate rotation. Study of magnetization reversal via magneto optic Kerr effect based microscopy revealed reduction of uniaxial anisotropy and increase in domain size with substrate rotation. The relaxation measured under constant magnetic field becomes faster with rotation of the substrate during deposition. The nature of relaxation for the non-rotating sample can be described by a double exponential decay. However, the relaxation for the sample with substrate rotation is well described either by a double exponential or a Fatuzzo-Labrune like single exponential decay, which increases in applied field

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

Science.gov (United States)

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

2018-06-01

The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

Random sequential adsorption: from continuum to lattice and pre-patterned substrates

International Nuclear Information System (INIS)

Cadilhe, A; Araujo, N A M; Privman, Vladimir

2007-01-01

The random sequential adsorption (RSA) model has served as a paradigm for diverse phenomena in physical chemistry, as well as in other areas such as biology, ecology, and sociology. In the present work, we survey aspects of the RSA model with emphasis on the approach to and properties of jammed states obtained for large times in continuum deposition versus that on lattice substrates, and on pre-patterned surfaces. The latter model has been of recent interest in the context of efforts to use pre-patterning as a tool to improve self-assembly in micro- and nanoscale surface structure engineering

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Science.gov (United States)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Optical properties of lattice matched InxGa1-xP1-yNy heteroepitaxial layers on GaP

International Nuclear Information System (INIS)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y.

2005-01-01

Optical constants and band structure of In x Ga 1-x P 1-y N y lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E 0 (Γ v to Γ c ), E 1 (L v to L c ) and E 2 (X v to X c ) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E PL , and E 0 shift to lower energy, and the energy difference ΔE=E 0 -E PL decrease from 380 meV to 110 meV. The large red-sift of E PL from the E 0 suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of ΔE is estimated to be around in In 0.1 Ga 0.9 P 0.96 N 0.04 . (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial hexagonal materials on IBAD-textured substrates

Science.gov (United States)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Science.gov (United States)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Comparison of interface structure of BCC metallic (Fe, V and Nb) films on MgO (100) substrate

Energy Technology Data Exchange (ETDEWEB)

Du, J.L. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Zhang, L.Y. [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 (China); Fu, E.G., E-mail: efu@pku.edu.cn [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Ding, X., E-mail: dingxd@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049 (China); Yu, K.Y., E-mail: kyyu@cup.edu.cn [Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249 (China); Wang, Y.G. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Wang, Y.Q.; Baldwin, J.K. [Experimental Physical Sciences Directorate, Los Alamos National Laboratory, Los Alamos, NM 87544 (United States); Wang, X.J. [State Key Laboratory of Advanced Optical Communication Systems and Networks, Peking University, Beijing 100871 (China); Xu, P. [Department of Chemistry, Harbin Institute of Technology, Harbin, Heilongjiang, 150001 (China)

2017-07-15

Highlights: • The difference of BCC metal/MgO(100) interface configuration with various lattice mismatches is identified by experiments and simulations in terms of dislocations and work of separation. • The strength of bonds along interface is found to be the fundamental factor to determine the interface configurations between BCC metal and MgO substrate. • The combination of experiments and simulations shows that the O-atop model is the actual match type between BCC metal and MgO substrate. - Abstract: This study systematically investigates the interface structure of three body-centered-cubic (BCC) metallic (Fe, V and Nb) films grown on MgO(100) substrates through experiments and simulations. Orientation relationships of their interfaces with the different lattice mismatches exhibit cube-on-cube configurations. The misfit dislocations at these three interfaces exhibit different characteristics. High resolution TEM (HRTEM), combined with first principle calculations, demonstrates the O-atop match type between metal atoms and MgO substrates for the first time. The fundamental mechanism in determining the interface configuration is discussed in terms of the work of separation and delocalization of atomic charge density.

Palladium clusters deposited on the heterogeneous substrates

Energy Technology Data Exchange (ETDEWEB)

Wang, Kun, E-mail: cqdxwk@126.com [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Liu, Juanfang, E-mail: juanfang@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China); Chen, Qinghua, E-mail: qhchen@cqu.edu.cn [College of Power Engineering, Chongqing University, Chongqing 400044 (China); Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education of PRC, Chongqing 400044 (China)

2016-07-15

Graphical abstract: The site-exchange between the substrate and cluster atoms can result in the formation of the surface alloys and the reconstruction of the cluster structure before the collision system approaching the thermal equilibrium. The deposited cluster adjusted the atom arrangement as possibly as to match the substrate lattice arrangement from bottom to up. The structural reconstruction is accompanied by the system potential energy minimization. - Highlights: • The deposition process can divide explicitly into three stages: adsorption, collision, relaxation. • The local melt does not emerge inside the substrate during the deposition process. • Surface alloys are formed by the site-exchange between the cluster and substrate atoms. • The cluster reconstructs the atom arrangement following as the substrate lattice arrangement from bottom to up. • The structural reconstruction ability and scope depend on the cluster size and incident energy. - Abstract: To improve the performance of the Pd composite membrane prepared by the cold spraying technology, it is extremely essential to give insights into the deposition process of the cluster and the heterogeneous deposition of the big Pd cluster at the different incident velocities on the atomic level. The deposition behavior, morphologies, energetic and interfacial configuration were examined by the molecular dynamic simulation and characterized by the cluster flattening ratio, the substrate maximum local temperature, the atom-embedded layer number and the surface-alloy formation. According to the morphology evolution, three deposition stages and the corresponding structural and energy evolution were clearly identified. The cluster deformation and penetrating depth increased with the enhancement of the incident velocity, but the increase degree also depended on the substrate hardness. The interfacial interaction between the cluster and the substrate can be improved by the higher substrate local temperature

Interface dependence of band offsets in lattice-matched isovalent heterojunctions

Science.gov (United States)

Lambrecht, Walter R. L.; Segall, Benjamin

1990-01-01

Using a previously developed self-consistent dipole theory, we find that the interface dependence of band offsets for lattice-matched isovalent heterojunction is generally small. Specifically, we find the difference between the (001) and (110) band offsets for the common-anion heterojunctions AlP/GaP, AlAs/GaAs, AlSb/GaSb, and CdTe/HgTe to be, at most, 0.02 eV. An investigation of the various details in the calculations leads to an error estimate of +/-0.03 eV; the differences are therefore insignificant. For the noncommon-anion systems, the difference between two different bonding configurations of the (001) interface is noted. Although the differences between the various interfaces are found to be slightly larger than for the common-anion cases, the only significant difference is found to occur between the In-Sb and Ga-As (001) interfaces, where it is 0.1 eV. In this case, the (110) band offset lies midway between the two.

Lattice-parameter-difference measurement of heteroepitaxial structures by means of extremely asymmetrical Bragg diffraction

International Nuclear Information System (INIS)

Pietsch, U.; Borchard, W.

1987-01-01

The sensitivity of measurements of the lattice-parameter difference in monocrystalline heterostructures can be enhanced by use of an extremely asymmetrical diffraction geometry. If the angle of incidence is somewhat higher than the critical angle for total external reflection, the Bragg peak is shifted from the position calculated by kinematic theory. The amount of shift depends on the angle of incidence as well as on the mass density of the material used. For heteroepitaxial structures both the layer and the substrate peaks are shifted but by different amounts. Therefore it becomes possible to characterize layers of totally lattice-matched structures also. (orig.)

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

Science.gov (United States)

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

An inkjet-printed UWB antenna on paper substrate utilizing a novel fractal matching network

KAUST Repository

Cook, Benjamin Stassen; Shamim, Atif

2012-01-01

In this work, the smallest reported inkjet-printed UWB antenna is proposed that utilizes a fractal matching network to increase the performance of a UWB microstrip monopole. The antenna is inkjet-printed on a paper substrate to demonstrate

Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

Science.gov (United States)

Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

2015-03-01

The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

NARCIS (Netherlands)

Boschker, Jos E.; Momand, Jamo; Bragaglia, Valeria; Wang, Ruining; Perumal, Karthick; Giussani, Alessandro; Kooi, Bart J.; Riechert, Henning; Calarco, Raffaella

Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded (2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of 3D materials, it is found that the formation of coincidence lattices between Sb2Te3 and Si(111) depends on the geometry

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.

2011-10-24

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

International Nuclear Information System (INIS)

Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

1988-01-01

We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

Energy Technology Data Exchange (ETDEWEB)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A.

2016-05-25

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

Epitaxial hexagonal materials on IBAD-textured substrates

Energy Technology Data Exchange (ETDEWEB)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Method for producing substrates for superconducting layers

DEFF Research Database (Denmark)

2013-01-01

There is provided a method for producing a substrate (600) suitable for supporting an elongated superconducting element, wherein, e.g., a deformation process is utilized in order to form disruptive strips in a layered solid element, and where etching is used to form undercut volumes (330, 332...

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

Science.gov (United States)

2015-08-27

copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

Method for Producing Substrates for Superconducting Layers

DEFF Research Database (Denmark)

2015-01-01

There is provided a method for producing a substrate suitable for supporting an elongated superconducting element, wherein one or more elongated strips of masking material are placed on a solid element (202) so as to form one or more exposed elongated areas being delimited on one or two sides...

Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates

International Nuclear Information System (INIS)

Wüstefeld, Christina; Rafaja, David; Motylenko, Mykhaylo; Ullrich, Christiane; Drehmann, Rico; Grund, Thomas; Lampke, Thomas; Wielage, Bernhard

2017-01-01

Cold gas sprayed Al coatings deposited onto wurtzitic AlN substrates show excellent adhesion. As a possible adhesion mechanism, the local heteroepitaxy between Al and AlN was considered and verified experimentally in Al coatings, which were deposited using magnetron sputtering or cold gas spraying on single-crystalline and polycrystalline AlN substrates. Analysis of the local orientation relationships at the Al/AlN interfaces revealed that preferentially such lattice planes of Al align parallel with the upright lattice planes of AlN, which possess similar interplanar distances. The matching lattice planes in the Al coatings grew as continuations of the lattice planes in the AlN substrates. In all samples under study, the parallel alignment of the lattice planes {220}_A_l and {110}_A_l_N was found. Additional orientation relationships between Al and AlN arose if parallel lattice planes with similar interplanar spacing could be found in both counterparts via rotation of the lattice planes {220}_A_l around their normal direction. Still, the oriented growth of Al on AlN is only possible if Al atoms in the deposited coatings are mobile enough to rearrange along the AlN surface. Whereas the mobility of Al atoms in a magnetron sputtering process is expected to be sufficiently high, the intrinsic mobility of Al atoms in the cold gas sprayed particles is anticipated to be low. However, the auxiliary microstructure analyses have shown that local recrystallization and partial melting are two phenomena, which can facilitate the rearrangement of Al atoms within the cold gas sprayed coating.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

Science.gov (United States)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Selective nanoscale growth of lattice mismatched materials

Science.gov (United States)

Lee, Seung-Chang; Brueck, Steven R. J.

2017-06-20

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Spatial classification with fuzzy lattice reasoning

NARCIS (Netherlands)

Mavridis, Constantinos; Athanasiadis, I.N.

2017-01-01

This work extends the Fuzzy Lattice Reasoning (FLR) Classifier to manage spatial attributes, and spatial relationships. Specifically, we concentrate on spatial entities, as countries, cities, or states. Lattice Theory requires the elements of a Lattice to be partially ordered. To match such

Use of aquatic macrophytes in substrate composition to produce moringa seedlings

Directory of Open Access Journals (Sweden)

Walda Monteiro Farias

2016-03-01

Full Text Available The use of aquatic macrophytes in substrate composition to produce seedlings of moringa is a sustainable alternative. Therefore, the objective of this research was to evaluate the development of moringa seedlings using substrates composed with aquatic macrophytes, and to determine concentrations of N, P and K in the seedlings. We used different combinations of weeds (M, manure (E and topsoil (TV to compose the substrates. The experiment was conducted in a 3 × 4 factorial in randomized arrangement with four replications. We evaluated plant height, crown diameter and stem, relative growth rate in height, canopy diameter and in stem, dry matter of aerial part and of roots, root length and root/shoot ratio, besides the content of N, P and K in seedlings. Moringa seedlings showed reduced growth when produced in substrates composed only with cattail. Water lettuce and substrates composed of 60% M + 30%E + 10 % TV and 70% M + 30% E, promoted greater nutrition and growth of moringa seedlings. The substrate 60M +30E +10TV composed by water hyacinth and cattail resulted in greater amount of P in moringa seedlings.

Hyperspectral imaging of cuttlefish camouflage indicates good color match in the eyes of fish predators.

Science.gov (United States)

Chiao, Chuan-Chin; Wickiser, J Kenneth; Allen, Justine J; Genter, Brock; Hanlon, Roger T

2011-05-31

Camouflage is a widespread phenomenon throughout nature and an important antipredator tactic in natural selection. Many visual predators have keen color perception, and thus camouflage patterns should provide some degree of color matching in addition to other visual factors such as pattern, contrast, and texture. Quantifying camouflage effectiveness in the eyes of the predator is a challenge from the perspectives of both biology and optical imaging technology. Here we take advantage of hyperspectral imaging (HSI), which records full-spectrum light data, to simultaneously visualize color match and pattern match in the spectral and the spatial domains, respectively. Cuttlefish can dynamically camouflage themselves on any natural substrate and, despite their colorblindness, produce body patterns that appear to have high-fidelity color matches to the substrate when viewed directly by humans or with RGB images. Live camouflaged cuttlefish on natural backgrounds were imaged using HSI, and subsequent spectral analysis revealed that most reflectance spectra of individual cuttlefish and substrates were similar, rendering the color match possible. Modeling color vision of potential di- and trichromatic fish predators of cuttlefish corroborated the spectral match analysis and demonstrated that camouflaged cuttlefish show good color match as well as pattern match in the eyes of fish predators. These findings (i) indicate the strong potential of HSI technology to enhance studies of biological coloration and (ii) provide supporting evidence that cuttlefish can produce color-coordinated camouflage on natural substrates despite lacking color vision.

The linear lattice design of an advanced VUV/SXR photon source for Daresbury

International Nuclear Information System (INIS)

Clarke, J.A.; Corlett, J.N.; Poole, M.W.; Smith, S.L.; Suller, V.P.; Welbourne, L.A.

1992-01-01

The linear lattice design of an advanced synchrotron radiation source in the VUV/SXR region, optimised to produce undulator radiation with high brilliance over the range 5-1000 eV, is discussed. The photon source is based on a 10 cell double bend achromat which will operate over the range 0.5-1.2 GeV. The linear lattice properties over the total available working region are presented for this structure. It is demonstrated that the circular lattice can be extended to a racetrack configuration by the inclusion of two long matched straights with free lengths of over 15 m each. (author) 8 refs.; 5 figs.; 1 tab

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

2016-11-21

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

2013-01-01

This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

Structural and magnetic properties of (NdBa)MnO₃ films on lattice-matched substrates

DEFF Research Database (Denmark)

Khoryushin, Alexey V.; Mozhaeva, Julia E.; Mozhaev, Peter B.

2013-01-01

Structural and magnetic properties of (NdBa)MnO3 thin films grown on several perovskite substrates by pulsed laser deposition are presented. A high crystal quality epitaxial film with smooth surface and low level of internal strain may be grown up to thicknesses of 70 nm. The in-plane distortion ...

Structural and magnetic properties of (NdBa)MnO.sub.3./sub. films on lattice-matched substrates

Czech Academy of Sciences Publication Activity Database

Khoryushin, A.V.; Mozhaeva, J.E.; Mozhaev, P.B.; Yurchenko, V. V.; Stupakov, Oleksandr; Pan, A.V.; Jacobsen, C.S.; Hansen, J.B.

2013-01-01

Roč. 333, MAY (2013), s. 53-62 ISSN 0304-8853 Institutional support: RVO:68378271 Keywords : CMR manganite * NdBa)MnO 3 * substrate-induced strain * oxygen deficiency Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.002, year: 2013 http://www.sciencedirect.com/science/article/pii/S0304885312010049

Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

International Nuclear Information System (INIS)

Giess, E.A.; Sandstrom, R.L.; Gallagher, W.J.; Gupta, A.; Shinde, S.L.; Cook, R.F.; Cooper, E.L.; O'Sullivan, E.M.J.; Roldan, J.M.; Segmuller, A.D.; Angilello, J.

1990-01-01

This paper reports on the use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-T c superconducting Ba 2 YCu 3 O 7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼ 277 for SrTiO 3 ). This study was undertaken to further explore the use of LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, and Y-stabilized ZrO 2 substrates, prepared from single-crystal joules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO 3 . Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO 3 was found to have the best lattice match with BYCO, and is now available twin-free

Entropy, free energy and phase transitions in the lattice Lotka-Volterra model

International Nuclear Information System (INIS)

Chichigina, O. A.; Tsekouras, G. A.; Provata, A.

2006-01-01

A thermodynamic approach is developed for reactive dynamic models restricted to substrates of arbitrary dimensions, including fractal substrates. The thermodynamic formalism is successfully applied to the lattice Lotka-Volterra (LLV) model of autocatalytic reactions on various lattice substrates. Different regimes of reactions described as phases, and phase transitions, are obtained using this approach. The predictions of thermodynamic theory confirm extensive numerical kinetic Monte Carlo simulations on square and fractal lattices. Extensions of the formalism to multispecies LLV models are also presented

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

International Nuclear Information System (INIS)

Romanov, V. V.; Dement’ev, P. A.; Moiseev, K. D.

2016-01-01

Indium-antimonide quantum dots (7–9 × 10"9 cm"2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

Mechanical matching and microstructural evolution at the coating/substrate interfaces of cold-sprayed Ni, Al coatings

International Nuclear Information System (INIS)

Lee, H.; Lee, S.; Shin, H.; Ko, K.

2009-01-01

The effect of mechanical hard/soft matching of raw powder and substrate in the cold gas dynamic spraying process (CDSP) on the formation of intermetallic compounds was examined. Instead of pre-alloyed materials, pure Al and Ni were selected as a soft and a hard material, respectively, and post-annealing was used for compound formation. Most of the aluminide layers were observed in the coated layer, but not in the substrate, along with the entire original interface for both Al coating on a Ni substrate and vice versa. Thickening of the compound layer depended mainly on the creation of defects during spraying and intrinsic diffusivity of atoms moving toward the coating side. When Ni was coated, the compound layer was made thicker by fast diffusion of Al, while the thickness was limited in soft Al coating on hard Ni substrate. However, the composition of the compound can be affected by relative transfer of diffusing atoms toward both the coating and the substrate. So, for Ni coating on an Al substrate, most of the intermetallic compound formed was Ni-rich and conversion of the Al-rich compound was observed after post-annealing above 500 deg. C.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

Science.gov (United States)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Three-wave interaction in two-component quadratic nonlinear lattices

DEFF Research Database (Denmark)

Konotop, V. V.; Cunha, M. D.; Christiansen, Peter Leth

1999-01-01

We investigate a two-component lattice with a quadratic nonlinearity and find with the multiple scale technique that integrable three-wave interaction takes place between plane wave solutions when these fulfill resonance conditions. We demonstrate that. energy conversion and pulse propagation known...... from three-wave interaction is reproduced in the lattice and that exact phase matching of parametric processes can be obtained in non-phase-matched lattices by tilting the interacting plane waves with respect to each other. [S1063-651X(99)15110-9]....

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Ren, Jian; Yan, Dawei, E-mail: daweiyan@jiangnan.edu.cn; Yang, Guofeng; Wang, Fuxue; Xiao, Shaoqing; Gu, Xiaofeng [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2015-04-21

Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

The application of computer color matching techniques to the matching of target colors in a food substrate: a first step in the development of foods with customized appearance.

Science.gov (United States)

Kim, Sandra; Golding, Matt; Archer, Richard H

2012-06-01

A predictive color matching model based on the colorimetric technique was developed and used to calculate the concentrations of primary food dyes needed in a model food substrate to match a set of standard tile colors. This research is the first stage in the development of novel three-dimensional (3D) foods in which color images or designs can be rapidly reproduced in 3D form. Absorption coefficients were derived for each dye, from a concentration series in the model substrate, a microwave-baked cake. When used in a linear, additive blending model these coefficients were able to predict cake color from selected dye blends to within 3 ΔE*(ab,10) color difference units, or within the limit of a visually acceptable match. Absorption coefficients were converted to pseudo X₁₀, Y₁₀, and Z₁₀ tri-stimulus values (X₁₀(P), Y₁₀(P), Z₁₀(P)) for colorimetric matching. The Allen algorithm was used to calculate dye concentrations to match the X₁₀(P), Y₁₀(P), and Z₁₀(P) values of each tile color. Several recipes for each color were computed with the tile specular component included or excluded, and tested in the cake. Some tile colors proved out-of-gamut, limited by legal dye concentrations; these were scaled to within legal range. Actual differences suggest reasonable visual matches could be achieved for within-gamut tile colors. The Allen algorithm, with appropriate adjustments of concentration outputs, could provide a sufficiently rapid and accurate calculation tool for 3D color food printing. The predictive color matching approach shows potential for use in a novel embodiment of 3D food printing in which a color image or design could be rendered within a food matrix through the selective blending of primary dyes to reproduce each color element. The on-demand nature of this food application requires rapid color outputs which could be provided by the color matching technique, currently used in nonfood industries, rather than by empirical food

Lattice defects in LPE InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates

International Nuclear Information System (INIS)

Ishida, K.; Matsumoto, Y.; Taguchi, K.

1982-01-01

Lattice defects generated during LPE growth of InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates are studied. Two different kinds of dislocations are observed at the two interfaces of the epitaxial layers; at the InP-InGaAsP interface, misfit dislocations are generated in the InP layer by carry over of InGaAsP melt into the InP one and at the InGaAs-InP interface, V-shaped dislocations are generated in the InGaAs layer. It is shown that the critical amount of lattice mismatch to suppress generation of misfit dislocations in InP is about two times smaller than that of other III-V compound semiconductors. Conditions to suppress the generation of these dislocations are clarified. (author)

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

LATTICE/hor ellipsis/a beam transport program

International Nuclear Information System (INIS)

Staples, J.

1987-06-01

LATTICE is a computer program that calculates the first order characteristics of synchrotrons and beam transport systems. The program uses matrix algebra to calculate the propagation of the betatron (Twiss) parameters along a beam line. The program draws on ideas from several older programs, notably Transport and Synch, adds many new ones and incorporates them into an interactive, user-friendly program. LATTICE will calculate the matched functions of a synchrotron lattice and display them in a number of ways, including a high resolution Tektronix graphics display. An optimizer is included to adjust selected element parameters so the beam meets a set of constraints. LATTICE is a first order program, but the effect of sextupoles on the chromaticity of a synchrotron lattice is included, and the optimizer will set the sextupole strengths for zero chromaticity. The program will also calculate the characteristics of beam transport systems. In this mode, the beam parameters, defined at the start of the transport line, are propagated through to the end. LATTICE has two distinct modes: the lattice mode which finds the matched functions of a synchrotron, and the transport mode which propagates a predefined beam through a beam line. However, each mode can be used for either type of problem: the transport mode may be used to calculate an insertion for a synchrotron lattice, and the lattice mode may be used to calculate the characteristics of a long periodic beam transport system

Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da [Universidade Estadual Paulista, UNESP, Bauru, São Paulo 17033-360 (Brazil); Leite, Douglas M. G. [Universidade Federal de Itajubá, UNIFEI, Itajubá, Minas Gerais 37500-903 (Brazil); Bortoleto, José R. R. [Universidade Estadual Paulista, UNESP, Sorocaba, São Paulo 18087-180 (Brazil)

2013-11-14

The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

Muscle damage produced during a simulated badminton match in competitive male players.

Science.gov (United States)

Abián, Pablo; Del Coso, Juan; Salinero, Juan José; Gallo-Salazar, César; Areces, Francisco; Ruiz-Vicente, Diana; Lara, Beatriz; Soriano, Lidón; Muñoz, Victor; Lorenzo-Capella, Irma; Abián-Vicén, Javier

2016-01-01

The purpose of the study was to assess the occurrence of muscle damage after a simulated badminton match and its influence on physical and haematological parameters. Sixteen competitive male badminton players participated in the study. Before and just after a 45-min simulated badminton match, maximal isometric force and badminton-specific running/movement velocity were measured to assess muscle fatigue. Blood samples were also obtained before and after the match. The badminton match did not affect maximal isometric force or badminton-specific velocity. Blood volume and plasma volume were significantly reduced during the match and consequently haematite, leucocyte, and platelet counts significantly increased. Blood myoglobin and creatine kinase concentrations increased from 26.5 ± 11.6 to 197.3 ± 70.2 µg·L(-1) and from 258.6 ± 192.2 to 466.0 ± 296.5 U·L(-1), respectively. In conclusion, a simulated badminton match modified haematological parameters of whole blood and serum blood that indicate the occurrence of muscle fibre damage. However, the level of muscle damage did not produce decreased muscle performance.

Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition

KAUST Repository

Foronda, Humberto M.

2017-06-19

Coherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.

Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition

KAUST Repository

Foronda, Humberto M.; Mazumder, Baishakhi; Young, Erin C.; Laurent, Matthew A.; Li, Youli; DenBaars, Steven P.; Speck, James S.

2017-01-01

Coherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.

Fractional Matching Effect due to Pinning of the Vortex Lattice by an Array of Magnetic Dots

Science.gov (United States)

Stoll, O. M.; Montero, M. I.; Jönsson-Åkerman, B. J.; Schuller, Ivan K.

2001-03-01

We have investigated the pinning of magnetic flux quanta by rectangular arrays of nanoscaled magnetic dots. We measured the resistivity vs. magnetic field characteristics using a high magnetic field resolution of up to 0.1 G over the full field range ( 2 kG to 2 kG). By this we the appearance of minima at half and third integer values of the matching field. It is well known that a reconfiguration of the vortex lattice from a rectangular to a square type geometry occurs in rectangular arrays of magnetic dots when the magnetic field is increased over a threshold value H_r. If we lower the magnetic field after crossing H_r, we find that some of the minima at the full integer matching field are missing. This hysteretic behavior occurs only when Hr is exceeded before the subsequent decrease of the magnetic field. We present the experimental results and discuss preliminary models for the explanation of these observations. This work was supported by the grants NSF and DOE. Two of us acknowledge postdoctoral fellowships by the DAAD (Deutscher Akademischer Austauschdienst) (O.M.S.) and the Secretaria De Estado De Educacion Y Universidades (M.I.M.) respectively.

Coulomb artifacts and bottomonium hyperfine splitting in lattice NRQCD

Energy Technology Data Exchange (ETDEWEB)

Liu, T. [Department of Physics, University of Alberta,11455 Saskatchewan Drive, Edmonton, Alberta T6G 2J1 (Canada); Penin, A.A. [Department of Physics, University of Alberta,11455 Saskatchewan Drive, Edmonton, Alberta T6G 2J1 (Canada); Institut für Theoretische Teilchenphysik, Karlsruhe Institute of Technology,Wolfgang-Gaede-Strasse 1, 76128 Karlsruhe (Germany); Rayyan, A. [Department of Physics, University of Alberta,11455 Saskatchewan Drive, Edmonton, Alberta T6G 2J1 (Canada)

2017-02-16

We study the role of the lattice artifacts associated with the Coulomb binding effects in the analysis of the heavy quarkonium within lattice NRQCD. We find that a “naïve” perturbative matching generates spurious linear Coulomb artifacts, which result in a large systematic error in the lattice predictions for the heavy quarkonium spectrum. This effect is responsible, in particular, for the discrepancy between the recent determinations of the bottomonium hyperfine splitting in the radiatively improved lattice NRQCD (DOI: 10.1103/PhysRevD.92.054502; Arxiv:1309.5797). We show that the correct matching procedure which provides full control over discretization errors is based on the asymptotic expansion of the lattice theory about the continuum limit, which gives M{sub Υ(1S)}−M{sub η{sub b(1S)}}=52.9±5.5 MeV (DOI: 10.1103/PhysRevD.92.054502).

Influence of defects on the effective electrical conductivity of a monolayer produced by random sequential adsorption of linear k-mers onto a square lattice

Science.gov (United States)

Tarasevich, Yuri Yu.; Laptev, Valeri V.; Goltseva, Valeria A.; Lebovka, Nikolai I.

2017-07-01

The effect of defects on the behaviour of electrical conductivity, σ, in a monolayer produced by the random sequential adsorption of linear k-mers (particles occupying k adjacent sites) onto a square lattice is studied by means of a Monte Carlo simulation. The k-mers are deposited on the substrate until a jamming state is reached. The presence of defects in the lattice (impurities) and of defects in the k-mers with concentrations of dl and dk, respectively, is assumed. The defects in the lattice are distributed randomly before deposition and these lattice sites are forbidden for the deposition of k-mers. The defects of the k-mers are distributed randomly on the deposited k-mers. The sites filled with k-mers have high electrical conductivity, σk, whereas the empty sites, and the sites filled by either types of defect have a low electrical conductivity, σl, i.e., a high-contrast, σk /σl ≫ 1, is assumed. We examined isotropic (both the possible x and y orientations of a particle are equiprobable) and anisotropic (all particles are aligned along one given direction, y) deposition. To calculate the effective electrical conductivity, the monolayer was presented as a random resistor network and the Frank-Lobb algorithm was used. The effects of the concentrations of defects dl and dk on the electrical conductivity for the values of k =2n, where n = 1 , 2 , … , 5, were studied. Increase of both the dl and dk parameters values resulted in decreases in the value of σ and the suppression of percolation. Moreover, for anisotropic deposition the electrical conductivity along the y direction was noticeably larger than in the perpendicular direction, x. Phase diagrams in the (dl ,dk)-plane for different values of k were obtained.

SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

KAUST Repository

Zou, Bin

2013-01-08

A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO 3/MgO films decreased with increasing oxygen partial pressure. Copyright © 2013 Materials Research Society.

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Energy Technology Data Exchange (ETDEWEB)

Craig, A. P.; Percy, B.; Marshall, A. R. J. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Jain, M. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Wicks, G.; Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Golding, T. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); McEwan, K.; Howle, C. [Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

2015-05-18

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Design of the SPEAR 3 magnet lattice

International Nuclear Information System (INIS)

Corbett, J.; Limborg, C.; Nosochkov, Y.; Safranek, J.

1998-01-01

The SPEAR 3 Upgrade Project seeks to replace the present 160 nm-rad FODO lattice with an 18 nm-rad double bend achromat (DBA) lattice. The new lattice must conform to the layout of the SPEAR racetrack tunnel and service the existing photon beamlines. Working within these constraints, the authors designed a lattice with 18 achromatic cells and 3 GeV beam energy. This paper reports on design of the main DBA cells, design of the matching cells leading into the 6.5 m racetrack straights, and simulation of the dynamic aperture. The new lattice has gradient dipoles, conventional quadrupoles, and provides horizontal dynamic aperture to ± 20 mm with conservative magnetic multipole errors

Counting in Lattices: Combinatorial Problems from Statistical Mechanics.

Science.gov (United States)

Randall, Dana Jill

In this thesis we consider two classical combinatorial problems arising in statistical mechanics: counting matchings and self-avoiding walks in lattice graphs. The first problem arises in the study of the thermodynamical properties of monomers and dimers (diatomic molecules) in crystals. Fisher, Kasteleyn and Temperley discovered an elegant technique to exactly count the number of perfect matchings in two dimensional lattices, but it is not applicable for matchings of arbitrary size, or in higher dimensional lattices. We present the first efficient approximation algorithm for computing the number of matchings of any size in any periodic lattice in arbitrary dimension. The algorithm is based on Monte Carlo simulation of a suitable Markov chain and has rigorously derived performance guarantees that do not rely on any assumptions. In addition, we show that these results generalize to counting matchings in any graph which is the Cayley graph of a finite group. The second problem is counting self-avoiding walks in lattices. This problem arises in the study of the thermodynamics of long polymer chains in dilute solution. While there are a number of Monte Carlo algorithms used to count self -avoiding walks in practice, these are heuristic and their correctness relies on unproven conjectures. In contrast, we present an efficient algorithm which relies on a single, widely-believed conjecture that is simpler than preceding assumptions and, more importantly, is one which the algorithm itself can test. Thus our algorithm is reliable, in the sense that it either outputs answers that are guaranteed, with high probability, to be correct, or finds a counterexample to the conjecture. In either case we know we can trust our results and the algorithm is guaranteed to run in polynomial time. This is the first algorithm for counting self-avoiding walks in which the error bounds are rigorously controlled. This work was supported in part by an AT&T graduate fellowship, a University of

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

KAUST Repository

Tangi, Malleswarara

2017-08-31

The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

Towards a lattice-matching solid-state battery: synthesis of a new class of lithium-ion conductors with the spinel structure.

Science.gov (United States)

Rosciano, Fabio; Pescarmona, Paolo P; Houthoofd, Kristof; Persoons, Andre; Bottke, Patrick; Wilkening, Martin

2013-04-28

Lithium ion batteries have conquered most of the portable electronics market and are now on the verge of deployment in large scale applications. To be competitive in the automotive and stationary sectors, however, they must be improved in the fields of safety and energy density (W h L(-1)). Solid-state batteries with a ceramic electrolyte offer the necessary advantages to significantly improve the current state-of-the-art technology. The major limit towards realizing a practical solid-state lithium-ion battery lies in the lack of viable ceramic ionic conductors. Only a few candidate materials are available, each carrying a difficult balance between advantages and drawbacks. Here we introduce a new class of possible solid-state lithium-ion conductors with the spinel structure. Such compounds could be coupled with spinel-type electrode materials to obtain a "lattice matching" solid device where low interfacial resistance could be achieved. Powders were prepared by wet chemistry, their structure was studied by means of diffraction techniques and magic angle spinning NMR, and Li(+) self-diffusion was estimated by static NMR line shape measurements. Profound differences in the Li(+) diffusion properties were observed depending on the composition, lithium content and cationic distribution. Local Li(+) hopping in the spinel materials is accompanied by a low activation energy of circa 0.35 eV being comparable with that of, e.g., LLZO-type garnets, which represent the current benchmark in this field. We propose these novel materials as a building block for a lattice-matching all-spinel solid-state battery with low interfacial resistance.

Hadronic vacuum polarization contribution to g-2 from the lattice

International Nuclear Information System (INIS)

Feng, X.; Jansen, K.; Renner, D.

2011-12-01

We give a short description of the present situation of lattice QCD simulations. We then focus on the computation of the anomalous magnetic moment of the muon using lattice techniques. We demonstrate that by employing improved observables for the muon anomalous magnetic moment, a significant reduction of the lattice error can be obtained. This provides a promising scenario that the accuracy of lattice calculations can match the experimental errors. (orig.)

Hadronic Vacuum Polarization Contribution to g-2 from the Lattice

Energy Technology Data Exchange (ETDEWEB)

Dru Renner, Xu Feng, Marcus Petschlies, Karl Jansen

2012-05-01

We give a short description of the present situation of lattice QCD simulations. We then focus on the computation of the anomalous magnetic moment of the muon using lattice techniques. We demonstrate that by employing improved observables for the muon anomalous magnetic moment, a significant reduction of the lattice error can be obtained. This provides a promising scenario that the accuracy of lattice calculations can match the experimental errors.

Hadronic vacuum polarization contribution to g-2 from the lattice

Energy Technology Data Exchange (ETDEWEB)

Feng, X. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki (Japan); Jansen, K. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Petschlies, M. [The Cyprus Institute, Nicosia (Cyprus); Renner, D. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2011-12-15

We give a short description of the present situation of lattice QCD simulations. We then focus on the computation of the anomalous magnetic moment of the muon using lattice techniques. We demonstrate that by employing improved observables for the muon anomalous magnetic moment, a significant reduction of the lattice error can be obtained. This provides a promising scenario that the accuracy of lattice calculations can match the experimental errors. (orig.)

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa

2014-08-28

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

Method For Producing Mechanically Flexible Silicon Substrate

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

2014-01-01

A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

International Nuclear Information System (INIS)

Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

2015-01-01

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

International Nuclear Information System (INIS)

Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

2007-01-01

Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

Unquenched lattice upsilon spectroscopy

International Nuclear Information System (INIS)

Marcantonio, L.M.

2001-03-01

A non-relativistic effective theory of QCD (NRQCD) is used in calculations of the upsilon spectrum. Simultaneous multi-correlation fitting routines are used to yield lattice channel energies and amplitudes. The lattice configurations used were both dynamical, with two flavours of sea quarks included in the action; and quenched, with no sea quarks. These configurations were generated by the UKQCD collaboration. The dynamical configurations used were ''matched'', having the same lattice spacing, but differing in the sea quark mass. Thus, it was possible to analyse trends of observables with sea quark mass, in the certainty that the trend isn't partially due to varying lattice spacing. The lattice spacing used for spectroscopy was derived from the lattice 1 1 P 1 - 1 3 S 1 splitting. On each set of configurations two lattice bare b quark masses were used, giving kinetic masses bracketing the physical Υ mass. The only quantity showing a strong dependence on these masses was the hyperfine splitting, so it was interpolated to the real Υ mass. The radial and orbital splittings gave good agreement with experiment. The hyperfine splitting results showed a clear signal for unquenching and the dynamical hyperfine splitting results were extrapolated to a physical sea quark mass. This result, combined with the quenched result yielded a value for the hyperfine splitting at n f = 3, predicting an η b mass of 9.517(4) GeV. The NRQCD technique for obtaining a value of the strong coupling constant in the M-barS-bar scheme was followed. Using quenched and dynamical results a value was extrapolated to n f = 3. Employing a three loop beta function to run the coupling, with suitable matching conditions at heavy quark thresholds, the final result was obtained for n f = 5 at a scale equal to the Z boson mass. This result was α(5)/MS(Mz)=0.110(4). Two methods for finding the mass of the b quark in the MS scheme were employed. The results of both methods agree within error but the

Optical properties of lattice matched In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} heteroepitaxial layers on GaP

Energy Technology Data Exchange (ETDEWEB)

Imanishi, T.; Wakahara, A.; Kim, S.M.; Yonezu, H.; Furukawa, Y. [Department of Electrical and Electron Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 411-8580 (Japan)

2005-04-01

Optical constants and band structure of In{sub x}Ga{sub 1-x}P{sub 1-y}N{sub y} lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X-ray diffraction and X-ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E{sub 0} ({gamma}{sub v} to {gamma}{sub c}), E{sub 1} (L{sub v} to L{sub c}) and E{sub 2} (X{sub v} to X{sub c}) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, E{sub PL}, and E{sub 0} shift to lower energy, and the energy difference {delta}E=E{sub 0}-E{sub PL} decrease from 380 meV to 110 meV. The large red-sift of E{sub PL} from the E{sub 0} suggest that the luminescence is of defect-related luminescence, and crossover point of indirect band structure estimated by the extrapolation of N-composition dependence of {delta}E is estimated to be around in In{sub 0.1}Ga{sub 0.9}P{sub 0.96}N{sub 0.04}. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

Science.gov (United States)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hirst, Louise C.; Abell, Josh; Ellis, Chase T.; Tischler, Joseph G.; Vurgaftman, Igor; Meyer, Jerry R.; Walters, Robert J. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, DC 20375 (United States); Lumb, Matthew P. [The George Washington University, 2121 I Street NW, Washington, DC 20037 (United States); González, María [Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)

2015-06-07

A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two different growth temperatures of 450 °C and 325 °C were compared. Interpolated bandgap energies suggest that the development of this alloy would extend the range of available direct bandgaps attainable in materials lattice-matched to InP to energies as high as 1.81 eV. However, the peak energy of the observed PL emission is anomalously low for samples grown at both temperatures, with the 450 °C sample showing larger deviation from the expected bandgap. A fit of the integrated PL intensity (I) to an I∝P{sup k} dependence, where P is the incident power density, yields characteristic coefficients k = 1.05 and 1.18 for the 450 °C and 325 °C samples, respectively. This indicates that the PL from both samples is dominated by excitonic recombination. A blue-shift in the peak emission energy as a function of P, along with an S-shaped temperature dependence, is observed. These trends are characteristic of spatially-indirect recombination associated with compositional variations. The energy depth of the confining potential, as derived from the thermal quenching of the photoluminescence, is 0.14 eV for the 325 °C sample, which is consistent with the red-shift of the PL emission peak relative to the expected bandgap energy. This suggests that compositional variation is the primary cause of the anomalously low PL emission peak energy. The higher energy PL emission of the 325 °C sample, relative to the 450 °C sample, is consistent with a reduction of the compositional fluctuations. The lower growth temperature is therefore considered more favorable for further growth optimization.

Quantum degenerate atomic gases in controlled optical lattice potentials

Science.gov (United States)

Gemelke, Nathan D.

2007-12-01

Since the achievement of Bose Einstein condensation in cold atomic gases, mean-field treatments of the condensed phase have provided an excellent description for the static and dynamic properties observed in experiments. Recent experimental efforts have focused on studying deviations from mean-field behavior. I will describe work on two experiments which introduce controlled single particle degeneracies with time-dependent optical potentials, aiming to induce correlated motion and nontrivial statistics in the gas. In the first experiment, an optical lattice with locally rotating site potentials is produced to investigate fractional quantum Hall effects (FQHE) in rotating Bose gases. Here, the necessary gauge potential is provided by the rotating reference frame of the gas, which, in direct analogy to the electronic system, organizes single particle states into degenerate Landau levels. At low temperatures the repulsive interaction provided by elastic scattering is expected to produce ground states with structure nearly identical to those in the FQHE. I will discuss how these effects are made experimentally feasible by working at small particle numbers in the tight trapping potentials of an optical lattice, and present first results on the use of photoassociation to probe correlation in this system. In the second experiment, a vibrated optical lattice potential alters the single-particle dispersion underlying a condensed Bose gas and offers tailored phase-matching for nonlinear atom optical processes. I will demonstrate how this leads to parametric instability in the condensed gas, and draw analogy to an optical parametric oscillator operating above threshold.

A new route to produce efficient surface-enhanced Raman spectroscopy substrates: gold-decorated CdSe nanowires

Energy Technology Data Exchange (ETDEWEB)

Das, Gobind; Chakraborty, Ritun; Gopalakrishnan, Anisha [Italian Institute of Technology, Nanostructure Division (Italy); Baranov, Dmitry [University of Colorado at Boulder, Department of Chemistry and Biochemistry (United States); Di Fabrizio, Enzo [King Abdullah University Science and Technology (KAUST), PSE and BESE Divisions (Saudi Arabia); Krahne, Roman, E-mail: roman.krahne@iit.it [Italian Institute of Technology, Nanostructure Division (Italy)

2013-05-15

Surface-enhanced Raman spectroscopy is a popular tool for the detection of extremely small quantities of target molecules. Au nanoparticles have been very successful in this respect due to local enhancement of the light intensity caused by their plasmon resonance. Furthermore, Au nanoparticles are biocompatible, and target substances can be easily attached to their surface. Here, we demonstrate that Au-decorated CdSe nanowires when employed as SERS substrates lead to an enhancement as large as 10{sup 5} with respect to the flat Au surfaces. In the case of hybrid metal-CdSe nanowires, the Au nucleates preferably on lattice defects at the lateral facets of the nanowires, which leads to a homogeneous distribution of Au nanoparticles on the nanowire, and to an efficient quenching of the nanowire luminescence. Moreover, the size of the Au nanoparticles can be well controlled via the AuCl{sub 3} concentration in the fabrication process. We demonstrate the effectiveness of our SERS substrates with two target substances, namely, cresyl-violet and rhodamine-6G. Au-decorated nanowires can be easily fabricated in large quantities at low cost by wet-chemical synthesis. Furthermore, their deposition onto various substrates, as well as the functionalization of these wires with the target substances, is as straightforward as with the traditional markers.

Micro/nano engineering on stainless steel substrates to produce superhydrophobic surfaces

Energy Technology Data Exchange (ETDEWEB)

Beckford, Samuel; Zou Min, E-mail: mzou@uark.edu

2011-12-30

Creating micro-/nano-scale topography on material surfaces to change their wetting properties has been a subject of much interest in recent years. Wenzel in 1936 and Cassie and Baxter in 1944 proposed that by microscopically increasing the surface roughness of a substrate, it is possible to increase its hydrophobicity. This paper reports the fabrication of micro-textured surfaces and nano-textured surfaces, and the combination of both on stainless steel substrates by sandblasting, thermal evaporation of aluminum, and aluminum-induced crystallization (AIC) of amorphous silicon (a-Si). Meanwhile, fluorinated carbon films were used to change the chemical composition of the surfaces to render the surfaces more hydrophobic. These surface modifications were investigated to create superhydrophobic surfaces on stainless steel substrates. The topography resulting from these surface modifications was analyzed by scanning electron microscopy and surface profilometry. The wetting properties of these surfaces were characterized by water contact angle measurement. The results of this study show that superhydrophobic surfaces can be produced by either micro-scale surface texturing or nano-scale surface texturing, or the combination of both, after fluorinated carbon film deposition.

Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Olvera-Herandez, J; Olvera-Cervantes, J; Rojas-Lopez, M; Navarro-Contreras, H; Vidal, M A; Anda, F de

2006-01-01

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga 1-x In x As y Sb 1-y alloys with low (In, As) contents (0.03 0 C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys

Lattice vibrations study of Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} quaternary alloys with low (In, As) content grown by liquid phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Olvera-Herandez, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Olvera-Cervantes, J [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Rojas-Lopez, M [Centro de Investigacion en BiotecnologIa Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72160 (Mexico); Navarro-Contreras, H [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Vidal, M A [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico); Anda, F de [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, 78100, San Luis PotosI, S.L.P. (Mexico)

2006-01-01

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} alloys with low (In, As) contents (0.03 substrates at 540{sup 0}C. High Resolution X-Ray Diffraction results showed profiles associated with a quaternary layer lattice matched to the GaSb substrate as obtained from the (004) reflection. The experimental diffractograms were simulated to estimate alloy composition, thickness and lattice mismatch of the layer. Raman scattering results show phonon frequencies associated to the TO and LO GaAs-like modes as well as GaSb + InAs-like mode, which are characteristic of this quaternary alloy. The As content dependence of the phonon frequency measured in this alloy for low (In, As) contents agree well with the modified Random-Element Isodisplacement (REI) model and also with other available experimental reports. This method can also be used to estimate alloy compositions for this kind of quaternary alloys.

Deep levels in p-type InGaAsN lattice matched to GaAs

International Nuclear Information System (INIS)

Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

1999-01-01

Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

Science.gov (United States)

Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

2014-01-01

First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

Multispeed Lattice Boltzmann Model with Space-Filling Lattice for Transcritical Shallow Water Flows

Directory of Open Access Journals (Sweden)

Y. Peng

2017-01-01

Full Text Available Inspired by the recent success of applying multispeed lattice Boltzmann models with a non-space-filling lattice for simulating transcritical shallow water flows, the capabilities of their space-filling counterpart are investigated in this work. Firstly, two lattice models with five integer discrete velocities are derived by using the method of matching hydrodynamics moments and then tested with two typical 1D problems including the dam-break flow over flat bed and the steady flow over bump. In simulations, the derived space-filling multispeed models, together with the stream-collision scheme, demonstrate better capability in simulating flows with finite Froude number. However, the performance is worse than the non-space-filling model solved by finite difference scheme. The stream-collision scheme with second-order accuracy may be the reason since a numerical scheme with second-order accuracy is prone to numerical oscillations at discontinuities, which is worthwhile for further study.

Entropy-driven crystal formation on highly strained substrates

KAUST Repository

Savage, John R.

2013-05-20

In heteroepitaxy, lattice mismatch between the deposited material and the underlying surface strongly affects nucleation and growth processes. The effect of mismatch is well studied in atoms with growth kinetics typically dominated by bond formation with interaction lengths on the order of one lattice spacing. In contrast, less is understood about how mismatch affects crystallization of larger particles, such as globular proteins and nanoparticles, where interparticle interaction energies are often comparable to thermal fluctuations and are short ranged, extending only a fraction of the particle size. Here, using colloidal experiments and simulations, we find particles with short-range attractive interactions form crystals on isotropically strained lattices with spacings significantly larger than the interaction length scale. By measuring the free-energy cost of dimer formation on monolayers of increasing uniaxial strain, we show the underlying mismatched substrate mediates an entropy-driven attractive interaction extending well beyond the interaction length scale. Remarkably, because this interaction arises from thermal fluctuations, lowering temperature causes such substrate-mediated attractive crystals to dissolve. Such counterintuitive results underscore the crucial role of entropy in heteroepitaxy in this technologically important regime. Ultimately, this entropic component of lattice mismatched crystal growth could be used to develop unique methods for heterogeneous nucleation and growth of single crystals for applications ranging from protein crystallization to controlling the assembly of nanoparticles into ordered, functional superstructures. In particular, the construction of substrates with spatially modulated strain profiles would exploit this effect to direct self-assembly, whereby nucleation sites and resulting crystal morphology can be controlled directly through modifications of the substrate.

SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

Implementation of an iteractive matching scheme for the Kapchinskij-Vladimirskij equations in the WARP code

International Nuclear Information System (INIS)

Chilton, Sven H.

2008-01-01

The WARP code is a robust electrostatic particle-in-cell simulation package used to model charged particle beams with strong space-charge forces. A fundamental operation associated with seeding detailed simulations of a beam transport channel is to generate initial conditions where the beam distribution is matched to the structure of a periodic focusing lattice. This is done by solving for periodic, matched solutions to a coupled set of ODEs called the Kapchinskij-Vladimirskij (KV) envelope equations, which describe the evolution of low-order beam moments subject to applied lattice focusing, space-charge defocusing, and thermal defocusing forces. Recently, an iterative numerical method was developed (Lund, Chilton, and Lee, Efficient computation of matched solutions to the KV envelope equations for periodic focusing lattices, Physical Review Special Topics-Accelerators and Beams 9, 064201 2006) to generate matching conditions in a highly flexible, convergent, and fail-safe manner. This method is extended and implemented in the WARP code as a Python package to vastly ease the setup of detailed simulations. In particular, the Python package accommodates any linear applied lattice focusing functions without skew coupling, and a more general set of beam parameter specifications than its predecessor. Lattice strength iteration tools were added to facilitate the implementation of problems with specific applied focusing strengths

Implementation of an iterative matching scheme for the Kapchinskij-Vladimirskij equations in the WARP code

International Nuclear Information System (INIS)

Chilton, Sven; Chilton, Sven H.

2008-01-01

The WARP code is a robust electrostatic particle-in-cell simulation package used to model charged particle beams with strong space-charge forces. A fundamental operation associated with seeding detailed simulations of a beam transport channel is to generate initial conditions where the beam distribution is matched to the structure of a periodic focusing lattice. This is done by solving for periodic, matched solutions to a coupled set of ODEs called the Kapchinskij-Vladimirskij (KV) envelope equations, which describe the evolution of low-order beam moments subject to applied lattice focusing, space-charge defocusing, and thermal defocusing forces. Recently, an iterative numerical method was developed (Lund, Chilton, and Lee, Efficient computation of matched solutions to the KV envelope equations for periodic focusing lattices, Physical Review Special Topics-Accelerators and Beams 9, 064201 2006) to generate matching conditions in a highly flexible, convergent, and fail-safe manner. This method is extended and implemented in the WARP code as a Python package to vastly ease the setup of detailed simulations. In particular, the Python package accommodates any linear applied lattice focusing functions without skew coupling, and a more general set of beam parameter specifications than its predecessor. Lattice strength iteration tools were added to facilitate the implementation of problems with specific applied focusing strengths

A new route to produce efficient surface-enhanced Raman spectroscopy substrates: Gold-decorated CdSe nanowires

KAUST Repository

Das, Gobind

2013-04-13

Surface-enhanced Raman spectroscopy is a popular tool for the detection of extremely small quantities of target molecules. Au nanoparticles have been very successful in this respect due to local enhancement of the light intensity caused by their plasmon resonance. Furthermore, Au nanoparticles are biocompatible, and target substances can be easily attached to their surface. Here, we demonstrate that Au-decorated CdSe nanowires when employed as SERS substrates lead to an enhancement as large as 105 with respect to the flat Au surfaces. In the case of hybrid metal-CdSe nanowires, the Au nucleates preferably on lattice defects at the lateral facets of the nanowires, which leads to a homogeneous distribution of Au nanoparticles on the nanowire, and to an efficient quenching of the nanowire luminescence. Moreover, the size of the Au nanoparticles can be well controlled via the AuCl3 concentration in the fabrication process. We demonstrate the effectiveness of our SERS substrates with two target substances, namely, cresyl-violet and rhodamine-6G. Au-decorated nanowires can be easily fabricated in large quantities at low cost by wet-chemical synthesis. Furthermore, their deposition onto various substrates, as well as the functionalization of these wires with the target substances, is as straightforward as with the traditional markers. © 2013 Springer Science+Business Media Dordrecht.

A new route to produce efficient surface-enhanced Raman spectroscopy substrates: Gold-decorated CdSe nanowires

KAUST Repository

Das, Gobind; Chakraborty, Ritun; Gopalakrishnan, Anisha; Baranov, Dmitry; Di Fabrizio, Enzo M.; Krahne, Roman

2013-01-01

Surface-enhanced Raman spectroscopy is a popular tool for the detection of extremely small quantities of target molecules. Au nanoparticles have been very successful in this respect due to local enhancement of the light intensity caused by their plasmon resonance. Furthermore, Au nanoparticles are biocompatible, and target substances can be easily attached to their surface. Here, we demonstrate that Au-decorated CdSe nanowires when employed as SERS substrates lead to an enhancement as large as 105 with respect to the flat Au surfaces. In the case of hybrid metal-CdSe nanowires, the Au nucleates preferably on lattice defects at the lateral facets of the nanowires, which leads to a homogeneous distribution of Au nanoparticles on the nanowire, and to an efficient quenching of the nanowire luminescence. Moreover, the size of the Au nanoparticles can be well controlled via the AuCl3 concentration in the fabrication process. We demonstrate the effectiveness of our SERS substrates with two target substances, namely, cresyl-violet and rhodamine-6G. Au-decorated nanowires can be easily fabricated in large quantities at low cost by wet-chemical synthesis. Furthermore, their deposition onto various substrates, as well as the functionalization of these wires with the target substances, is as straightforward as with the traditional markers. © 2013 Springer Science+Business Media Dordrecht.

Machine learning action parameters in lattice quantum chromodynamics

Science.gov (United States)

Shanahan, Phiala E.; Trewartha, Daniel; Detmold, William

2018-05-01

Numerical lattice quantum chromodynamics studies of the strong interaction are important in many aspects of particle and nuclear physics. Such studies require significant computing resources to undertake. A number of proposed methods promise improved efficiency of lattice calculations, and access to regions of parameter space that are currently computationally intractable, via multi-scale action-matching approaches that necessitate parametric regression of generated lattice datasets. The applicability of machine learning to this regression task is investigated, with deep neural networks found to provide an efficient solution even in cases where approaches such as principal component analysis fail. The high information content and complex symmetries inherent in lattice QCD datasets require custom neural network layers to be introduced and present opportunities for further development.

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Yashika [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Department of Electronic Science, University of Delhi-South Campus, New Delhi 110021 (India); Arun, P., E-mail: arunp92@physics.du.ac.in [Department of Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007 (India); Naudi, A.A.; Walz, M.V. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Instituto de Física del Litoral (CONICET-UNL), Guemes 3450, 3000 Santa Fe (Argentina)

2016-08-01

Tin sulphide nano-crystalline thin films were fabricated on glass and Indium Tin Oxide (ITO) substrates by thermal evaporation method. The crystal structure orientation of the films was found to be dependent on the substrate. Residual stress existed in the films due to these orientations. This stress led to variation in lattice parameter. The nano-crystalline grain size was also found to vary with film thickness. A plot of band-gap with grain size or with lattice parameter showed the existence of a family of curves. This implied that band-gap of SnS films in the preview of the present study depends on two parameters, lattice parameter and grain size. The band-gap relation with grain size is well known in the nano regime. Experimental data fitted well with this relation for the given lattice constants. The manuscript uses theoretical structure calculations for different lattice constants and shows that the experimental data follows the trend. Thus, confirming that the band gap has a two variable dependency. - Highlights: • Tin sulphide films are grown on glass and ITO substrates. • Both substrates give differently oriented films. • The band-gap is found to depend on grain size and lattice parameter. • Using data from literature, E{sub g} is shown to be two parameter function. • Theoretical structure calculations are used to verify results.

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Science.gov (United States)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

Lattice topology dictates photon statistics.

Science.gov (United States)

Kondakci, H Esat; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-08-21

Propagation of coherent light through a disordered network is accompanied by randomization and possible conversion into thermal light. Here, we show that network topology plays a decisive role in determining the statistics of the emerging field if the underlying lattice is endowed with chiral symmetry. In such lattices, eigenmode pairs come in skew-symmetric pairs with oppositely signed eigenvalues. By examining one-dimensional arrays of randomly coupled waveguides arranged on linear and ring topologies, we are led to a remarkable prediction: the field circularity and the photon statistics in ring lattices are dictated by its parity while the same quantities are insensitive to the parity of a linear lattice. For a ring lattice, adding or subtracting a single lattice site can switch the photon statistics from super-thermal to sub-thermal, or vice versa. This behavior is understood by examining the real and imaginary fields on a lattice exhibiting chiral symmetry, which form two strands that interleave along the lattice sites. These strands can be fully braided around an even-sited ring lattice thereby producing super-thermal photon statistics, while an odd-sited lattice is incommensurate with such an arrangement and the statistics become sub-thermal.

A Lattice Calculation of Parton Distributions

International Nuclear Information System (INIS)

Alexandrou, Constantia; Cichy, Krzysztof; Poznan Univ.; Drach, Vincent; Univ. of Southern Denmark, Odense; Garcia-Ramos, Elena; Humboldt-Universitaet, Berlin; Hadjiyiannakou, Kyriakos; Jansen, Karl; Steffens, Fernanda; Wiese, Christian

2015-04-01

We report on our exploratory study for the direct evaluation of the parton distribution functions from lattice QCD, based on a recently proposed new approach. We present encouraging results using N f =2+1+1 twisted mass fermions with a pion mass of about 370 MeV. The focus of this work is a detailed description of the computation, including the lattice calculation, the matching to an infinite momentum and the nucleon mass correction. In addition, we test the effect of gauge link smearing in the operator to estimate the influence of the Wilson line renormalization, which is yet to be done.

Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1996-01-01

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

Quasi-hexagonal vortex-pinning lattice using anodized aluminum oxide nanotemplates

DEFF Research Database (Denmark)

Hallet, X.; Mátéfi-Tempfli, M.; Michotte, S.

2009-01-01

The bottom barrier layer of well-ordered nanoporous alumina membranes reveals a previously unexploited nanostructured template surface consisting of a triangular lattice of hemispherical nanoscale bumps. Quasi-hexagonal vortex-pinning lattice arrays are created in superconducting Nb films deposited...... onto this template (see image). Matching effects are preserved at higher magnetic fields and lower temperatures when compared to holes on the top face....

Rice Seedling Substrate Produced by Coal Gangue

Directory of Open Access Journals (Sweden)

SHAO Yu-fei

2017-10-01

Full Text Available Peats are the mostly used material in making rice seedling substrate. However, mining peats could cause environmental problems. In order to reduce or replace peats in rice seedling substrate industry, this paper studied suitable way to configure rice seedling. The coal gangue was used to experiment cultivating rice. Four rice seeding experiments were carried out based on physical and chemical properties of materials attributes. The results showed:(1 Coal gangue was feasible for rice seedling; (2 The maximum adding amount of coal gangue was 80%(volume ratio though the coal gangue need to be activated; (3 In the case of no activated treatment only 38%(volume ratio of coal gangue could be added to the substrate.

Magnetoluminescence characterization of lattice matched n-type InGaAs/InAlAs MQW`s on InP

Energy Technology Data Exchange (ETDEWEB)

Jones, E.D.; Tigges, C.P. [Sandia National Labs., Albuquerque, NM (United States); Kotera, N. [Kyushu Inst. of Tech., Iizuka, Fukuoka (Japan); Mishima, T.; Nakamura, H. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Miura, N. [Univ. of Tokyo (Japan). Inst. for Solid State Physics

1996-12-31

A knowledge of the energy-band energies and masses are important parameters for the design of semiconductor lasers and light-emitting diodes. The authors present results of a magnetoluminescence study on n-type (N{sub 2D} {approximately} 1 {times} 10{sup 12} cm{sup {minus}2}) InGaAs/InAlAs multiple quantum wells lattice matched to InP. From an analysis of low-temperature magnetoluminescence data, a simultaneous measurement of the inplane conduction and valence-band masses is made. They find, assuming parabolic bands, that the conduction and valence-band masses are respectively m{sub c} {approx} 0.069m{sub 0} and m{sub v} {approx} 0.061m{sub 0}, where m{sub 0} is the free electron mass. Fitting a nonparabolic conduction-band dispersion curve to the data yields a zone-center mass m{sub c} {approx} 0.056m{sub 0} and m{sub v} {approximately} 0.102m{sub 0}.

Aliasing modes in the lattice Schwinger model

International Nuclear Information System (INIS)

Campos, Rafael G.; Tututi, Eduardo S.

2007-01-01

We study the Schwinger model on a lattice consisting of zeros of the Hermite polynomials that incorporates a lattice derivative and a discrete Fourier transform with many properties. Such a lattice produces a Klein-Gordon equation for the boson field and the exact value of the mass in the asymptotic limit if the boundaries are not taken into account. On the contrary, if the lattice is considered with boundaries new modes appear due to aliasing effects. In the continuum limit, however, this lattice yields also a Klein-Gordon equation with a reduced mass

Synthesis of spatially variant lattices.

Science.gov (United States)

Rumpf, Raymond C; Pazos, Javier

2012-07-02

It is often desired to functionally grade and/or spatially vary a periodic structure like a photonic crystal or metamaterial, yet no general method for doing this has been offered in the literature. A straightforward procedure is described here that allows many properties of the lattice to be spatially varied at the same time while producing a final lattice that is still smooth and continuous. Properties include unit cell orientation, lattice spacing, fill fraction, and more. This adds many degrees of freedom to a design such as spatially varying the orientation to exploit directional phenomena. The method is not a coordinate transformation technique so it can more easily produce complicated and arbitrary spatial variance. To demonstrate, the algorithm is used to synthesize a spatially variant self-collimating photonic crystal to flow a Gaussian beam around a 90° bend. The performance of the structure was confirmed through simulation and it showed virtually no scattering around the bend that would have arisen if the lattice had defects or discontinuities.

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

Science.gov (United States)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Growth and characterization of visible diode lasers

International Nuclear Information System (INIS)

Shealy, J.R.; Bour, D.P.

1988-01-01

The (Al x Ga 1-x )yIn 1-y rho material system, lattice matched to GaAs substrates, has received much attention for use in visible laser diodes emitting in the spectral region λ--650-680 nm. When lattice matched to GaAs (y=0.5), this alloy spans a direct band gap range from --1.85 eV (at x=0) to --2.3 eV (near the T-X crossover at chi--0.7) It was only recently that device quality epitaxial layers have been prepared in this material due to difficulties with liquid phase epitaxial (LPE) and halide vapor phase epitaxial growth.Only organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) growth techniques have successfully produced AlGainP laser material

Matching the quasiparton distribution in a momentum subtraction scheme

Science.gov (United States)

Stewart, Iain W.; Zhao, Yong

2018-03-01

The quasiparton distribution is a spatial correlation of quarks or gluons along the z direction in a moving nucleon which enables direct lattice calculations of parton distribution functions. It can be defined with a nonperturbative renormalization in a regularization independent momentum subtraction scheme (RI/MOM), which can then be perturbatively related to the collinear parton distribution in the MS ¯ scheme. Here we carry out a direct matching from the RI/MOM scheme for the quasi-PDF to the MS ¯ PDF, determining the non-singlet quark matching coefficient at next-to-leading order in perturbation theory. We find that the RI/MOM matching coefficient is insensitive to the ultraviolet region of convolution integral, exhibits improved perturbative convergence when converting between the quasi-PDF and PDF, and is consistent with a quasi-PDF that vanishes in the unphysical region as the proton momentum Pz→∞ , unlike other schemes. This direct approach therefore has the potential to improve the accuracy for converting quasidistribution lattice calculations to collinear distributions.

Discrete-to-continuum modelling of weakly interacting incommensurate two-dimensional lattices.

Science.gov (United States)

Español, Malena I; Golovaty, Dmitry; Wilber, J Patrick

2018-01-01

In this paper, we derive a continuum variational model for a two-dimensional deformable lattice of atoms interacting with a two-dimensional rigid lattice. The starting point is a discrete atomistic model for the two lattices which are assumed to have slightly different lattice parameters and, possibly, a small relative rotation. This is a prototypical example of a three-dimensional system consisting of a graphene sheet suspended over a substrate. We use a discrete-to-continuum procedure to obtain the continuum model which recovers both qualitatively and quantitatively the behaviour observed in the corresponding discrete model. The continuum model predicts that the deformable lattice develops a network of domain walls characterized by large shearing, stretching and bending deformation that accommodates the misalignment and/or mismatch between the deformable and rigid lattices. Two integer-valued parameters, which can be identified with the components of a Burgers vector, describe the mismatch between the lattices and determine the geometry and the details of the deformation associated with the domain walls.

Substrate Specificity and Inhibitor Sensitivity of Plant UDP-Sugar Producing Pyrophosphorylases

Directory of Open Access Journals (Sweden)

Daniel Decker

2017-09-01

Full Text Available UDP-sugars are essential precursors for glycosylation reactions producing cell wall polysaccharides, sucrose, glycoproteins, glycolipids, etc. Primary mechanisms of UDP sugar formation involve the action of at least three distinct pyrophosphorylases using UTP and sugar-1-P as substrates. Here, substrate specificities of barley and Arabidopsis (two isozymes UDP-glucose pyrophosphorylases (UGPase, Arabidopsis UDP-sugar pyrophosphorylase (USPase and Arabidopsis UDP-N-acetyl glucosamine pyrophosphorylase2 (UAGPase2 were investigated using a range of sugar-1-phosphates and nucleoside-triphosphates as substrates. Whereas all the enzymes preferentially used UTP as nucleotide donor, they differed in their specificity for sugar-1-P. UGPases had high activity with D-Glc-1-P, but could also react with Fru-1-P and Fru-2-P (Km values over 10 mM. Contrary to an earlier report, their activity with Gal-1-P was extremely low. USPase reacted with a range of sugar-1-phosphates, including D-Glc-1-P, D-Gal-1-P, D-GalA-1-P (Km of 1.3 mM, β-L-Ara-1-P and α-D-Fuc-1-P (Km of 3.4 mM, but not β-L-Fuc-1-P. In contrast, UAGPase2 reacted only with D-GlcNAc-1-P, D-GalNAc-1-P (Km of 1 mM and, to some extent, D-Glc-1-P (Km of 3.2 mM. Generally, different conformations/substituents at C2, C4, and C5 of the pyranose ring of a sugar were crucial determinants of substrate specificity of a given pyrophosphorylase. Homology models of UDP-sugar binding to UGPase, USPase and UAGPase2 revealed more common amino acids for UDP binding than for sugar binding, reflecting differences in substrate specificity of these proteins. UAGPase2 was inhibited by a salicylate derivative that was earlier shown to affect UGPase and USPase activities, consistent with a common structural architecture of the three pyrophosphorylases. The results are discussed with respect to the role of the pyrophosphorylases in sugar activation for glycosylated end-products.

Quali-quantitative study of biogas produced by substrates in batch biodigestors; Estudo qualiquantitativo do biogas produzido por substratos em biodigestores tipo batelada

Energy Technology Data Exchange (ETDEWEB)

Galbiatti, Joao A.; Caramelo, Anaira D.; Silva, Flavia G.; Gerardi, Eliana A.B. [Universidade Estadual Paulista Julio de Mesquita Filho (DER/UNESP), Jaboticabal, SP (Brazil). Dept. de Engenharia Rural], emails: galbi@fcav.unesp.br, adcaramelo@hotmail.com, flacgs@yahoo.com.br, borgesgerardi@uol.com.br; Chiconato, Denise A. [Uniao das Instituicoes Educacionais do Estado de Sao Paulo (DCB/UNIESP), Taquaritinga, SP (Brazil)], email: denise.ac@hotmail.com

2010-07-01

Aiming to study the biogas produced by 5 substrates from both quality and quantity point of view, this research was conducted at the Rural Engineering Department of FCAV/UNESP - Brazil, State of Sao Paulo. The substrates that were used in the anaerobic digestion were characterized as: slaughter fowls' manure with napier grass bed (MFNG); slaughter fowls' manure with triturate napier grass bed (MFNGT); swine manure (SM); bovine manure (BM) and bovine manure mixed with 50% of sugarcane bagasse (BM50S). From the data collected it was concluded that: the substract (MFNG) and the substract containing SM produced higher and lower volumes of biogas respectively, when compared to the others; the mixture of sugarcane bagasse in the substract containing Bovine manure damages the accumulated biogas production and its quality; 57 days after filling the biodigestors, all substrates produced biogas with a methane level higher than 48% except for the substrates containing swine manure; the triturate substrates (MFNGT) did not present such distinct characteristics from the non triturate substrates (MFNG); the quality of biogas at the maximum production stage was similar, for all the studied substrates; the biogas which presented higher quantity of methane in its composition was the one produced with BM, overcoming the value up to 17.7% over the MFNGT production. (author)

The lattice distortion around the divacancy in cubic metals using the method of lattice statics

International Nuclear Information System (INIS)

Yoshioki, S.

1976-01-01

The lattice distortion produced by a divacancy in FCC metals (Al, Cu, Ag and Au) and in BCC metals (Fe, Mo and V) has been calculated using the method of lattice statics. The model assumes non-equilibrium pairwise interactions extending out to second nearest neighbours. Roughly speaking, the relaxation volumes associated with the divacancy are twice the values for the isolated vacancy. (author)

II-IV-V Based Thin Film Tandem Photovoltaic Cell

Energy Technology Data Exchange (ETDEWEB)

Newman, Nathan [Arizona State Univ., Mesa, AZ (United States); van Schilfgaarde, Mark [Arizona State Univ., Mesa, AZ (United States)

2012-10-04

[Through a combination of theory and experiment that, absent unknown mitigating factors, a tandem cell whose (wide-gap. 1.8 eV) top layer is made of ZnSnP2 and whose (narrow gap, 1.1 eV) bottom layer consisting of ZnGeAs2 are near-ideal materials for a tandem cell. Not only are there gaps optimally adjusted to the solar spectrum, but the two compounds are lattice-matched, and their energy band structure and optical absorption are also near-ideal (they closely resemble that of GaAs). Our first major challenge is to establish that high-quality II-IV-V thin films can be synthesized. We have begun growing and characterizing films of ZnGeAs2 and ZnSnP2, initially grown on Ge substrates (the lattice constant of Ge matches these compounds) by pulsed laser ablation and sputtering. In tandem are theoretical calculations to guide the experiments. The goal is to develop methods that can be used to produce a pair of lattice-matched thin films that will be useful in tandem cells.

Parton distributions from lattice QCD with momentum smearing

Energy Technology Data Exchange (ETDEWEB)

Alexandrou, Constantia [Univ. of Cyprus, Nicosia (Cyprus). Dept. of Physics; Computation-based Science and Technology Research Center, Nicosia (Cyprus). Cyprus Inst.; Cichy, Krzysztof [Frankfurt Univ. (Germany). Inst. fuer Theoretische Physik; Adam Mickiewicz Univ., Poznan (Poland). Inst. of Physics; Constantinou, Martha [Temple Univ., Philadelphia, PA (United States); Hadjiyiannakou, Kyriakos [Univ. of Cyprus, Nicosia (Cyprus). Dept. of Physics; Jansen, Karl; Steffens, Fernanda; Wiese, Christian [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

2017-01-15

In this work we continue our effort to explore a recent proposal, which allows light-cone distributions to be extracted from purely spatial correlations, being thus accessible to lattice methods. In order to test the feasibility of this method, we present our latest results from a twisted mass lattice calculation of the flavor non-singlet momentum, helicity and transversity distributions of the nucleon. Furthermore, we apply a newly proposed momentum improved smearing, which has the potential to reach higher nucleon momenta as required for a safe matching procedure to the physical distribution functions.

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides

KAUST Repository

Aljarb, Areej

2017-08-07

Two-dimensional (2D) transition metal dichalcogenide (TMDCs) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition (CVD) to discover the factors controlling their orientation. We show that the concentration of precursors, i.e., the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory (DFT) simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

Science.gov (United States)

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

The thermal expansion coefficient of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ epitaxial layers grown on InP substrate

International Nuclear Information System (INIS)

Pietsch, U.; Marlow, D.

1986-01-01

The amount of the measured room temperature thermal expansion coefficient of tetragonal strained layers grown lattice matched on the InP substrate used is about 30% greater the expected one for a cubic 'relaxed' material. This issue has to be taken into account for the determination of the composition of the quarternary Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layers from both X-ray and photoluminescence data as well as for the estimation of the thermally created stress field of optoelectronic devices. (author)

Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Directory of Open Access Journals (Sweden)

Ziwei Wang

2016-06-01

Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

A Molecular Dynamics Study of the Epitaxial Growth of Metallic Nanoclusters Softly Deposited on Substrates with Very Different Lattice Parameter

International Nuclear Information System (INIS)

Jimenez-Saez, J C; Perez-MartIn, A M C; Jimenez-RodrIguez, J J

2007-01-01

The soft deposition of Cu and Au clusters on Au(001) and Cu(001) surfaces respectively is studied by constant-temperature molecular-dynamics simulations. The initial shape of the nanoclusters is icosahedral or truncated octahedral (Wulff type). Their number of atoms ranges between 12 and 1289 atoms. Bombardment energy is of the order of a few meV/atom. The atomic interactions are mimicked by a many-body potential based on the tightbinding model. The effect of the temperature as activation to get the complete epitaxy is analysed. We have found that Cu clusters manage to align their {002} planes with the substrate by increasing the temperature. However, there is not epitaxial growth in any case since the lattice becomes bcc or important stacking faults are generated. For Au clusters, the alignment of these planes is practically independent of the temperature

Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

Energy Technology Data Exchange (ETDEWEB)

Sun, G.F., E-mail: gfsun82@gmail.com [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); School of Mechanical Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Bhattacharya, S. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); Dinda, G.P.; Dasgupta, A. [Center for Advanced Technologies, Focus: Hope, Detroit, MI, 48238 (United States); Mazumder, J. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States)

2011-06-15

Highlights: {yields} Orientation relationships among phases in the DMD are given. {yields} Martensite lattice parameters increased with laser specific energy. {yields} Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

International Nuclear Information System (INIS)

Sun, G.F.; Bhattacharya, S.; Dinda, G.P.; Dasgupta, A.; Mazumder, J.

2011-01-01

Highlights: → Orientation relationships among phases in the DMD are given. → Martensite lattice parameters increased with laser specific energy. → Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

Multiplexed infrared plasmonic surface lattice resonances

Science.gov (United States)

Gutha, Rithvik R.; Sadeghi, Seyed M.; Sharp, Christina; Wing, Waylin J.

2018-01-01

We demonstrate that arrays of flat gold nanodisks with rectangular lattices can support a tunable hybrid frequency gap formed by the surface lattice resonances in the substrate ((+1, 0)sub) and the superstrate ((-1, 0)sup). For a certain polarization, rotation of the arrays reduces this gap, forming a band crossing (degenerate state) wherein both surface lattice resonances happen around a single wavelength (˜1300 nm). This highlights a situation wherein hybridization of the Rayleigh anomaly with localized surface plasmon resonances with different multipolar natures happens around the same wavelength. We demonstrate that for a different polarization of the incident light the arrays support the formation of a photonic-plasmonic state at about 1650 nm. Our results show that as the projection of the wave vector of the incident light on the planes of the nanodisk arrays increases, within a given wavelength range, the (+1, 0) mode of this state becomes amplified. Under this condition, this mode can undergo a significant blue shift without broadening, while its amplitude increases.

Microelectromechanical filter formed from parallel-connected lattice networks of contour-mode resonators

Science.gov (United States)

Wojciechowski, Kenneth E; Olsson, III, Roy H; Ziaei-Moayyed, Maryam

2013-07-30

A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.

Gallium nitride on gallium oxide substrate for integrated nonlinear optics

KAUST Repository

Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

2017-01-01

Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

Gallium nitride on gallium oxide substrate for integrated nonlinear optics

KAUST Repository

Awan, Kashif M.

2017-11-22

Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

Study on the output from programs in calculating lattice with transverse coupling

International Nuclear Information System (INIS)

Xu Jianming

1994-01-01

SYNCH and MAD outputs in calculating lattice with coordinate rotation have been studied. The result shows that the four dispersion functions given by SYNCH output in this case are wrong. There are large discrepancies between the Twiss Parameters given by these two programs. One has to be careful in using these programs to calculate or match lattices with coordinate rotations (coupling between two transverse motions) so that to avoid wrong results

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Science.gov (United States)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

2018-01-01

Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

Large local lattice expansion in graphene adlayers grown on copper

Science.gov (United States)

Chen, Chaoyu; Avila, José; Arezki, Hakim; Nguyen, Van Luan; Shen, Jiahong; Mucha-Kruczyński, Marcin; Yao, Fei; Boutchich, Mohamed; Chen, Yue; Lee, Young Hee; Asensio, Maria C.

2018-05-01

Variations of the lattice parameter can significantly change the properties of a material, and, in particular, its electronic behaviour. In the case of graphene, however, variations of the lattice constant with respect to graphite have been limited to less than 2.5% due to its well-established high in-plane stiffness. Here, through systematic electronic and lattice structure studies, we report regions where the lattice constant of graphene monolayers grown on copper by chemical vapour deposition increases up to 7.5% of its relaxed value. Density functional theory calculations confirm that this expanded phase is energetically metastable and driven by the enhanced interaction between the substrate and the graphene adlayer. We also prove that this phase possesses distinctive chemical and electronic properties. The inherent phase complexity of graphene grown on copper foils revealed in this study may inspire the investigation of possible metastable phases in other seemingly simple heterostructure systems.

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang

2014-11-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

Universality and the approach to the continuum limit in lattice gauge theory

CERN Document Server

De Divitiis, G M; Guagnelli, M; Lüscher, Martin; Petronzio, Roberto; Sommer, Rainer; Weisz, P; Wolff, U; de Divitiis, G; Frezzotti, R; Guagnelli, M; Luescher, M; Petronzio, R; Sommer, R; Weisz, P; Wolff, U

1995-01-01

The universality of the continuum limit and the applicability of renormalized perturbation theory are tested in the SU(2) lattice gauge theory by computing two different non-perturbatively defined running couplings over a large range of energies. The lattice data (which were generated on the powerful APE computers at Rome II and DESY) are extrapolated to the continuum limit by simulating sequences of lattices with decreasing spacings. Our results confirm the expected universality at all energies to a precision of a few percent. We find, however, that perturbation theory must be used with care when matching different renormalized couplings at high energies.

Method for producing textured substrates for thin-film photovoltaic cells

Science.gov (United States)

Lauf, Robert J.

1994-01-01

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

The fungal cultivar of leaf-cutter ants produces specific enzymes in response to different plant substrates

Energy Technology Data Exchange (ETDEWEB)

Khadempour, Lily [Department of Bacteriology, University of Wisconsin-Madison, Madison WI 53706 USA; Department of Zoology, University of Wisconsin-Madison, Madison WI 53706 USA; Department of Energy Great Lakes Bioenergy Research Center, University of Wisconsin-Madison, Madison WI 53706 USA; Burnum-Johnson, Kristin E. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Baker, Erin S. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Nicora, Carrie D. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Webb-Robertson, Bobbie-Jo M. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; White, Richard A. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Monroe, Matthew E. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Huang, Eric L. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Smith, Richard D. [Biological Sciences Division, Pacific Northwest National Laboratory, Richland WA 99352 USA; Currie, Cameron R. [Department of Bacteriology, University of Wisconsin-Madison, Madison WI 53706 USA; Department of Energy Great Lakes Bioenergy Research Center, University of Wisconsin-Madison, Madison WI 53706 USA

2016-10-26

Herbivores use symbiotic microbes to help gain access to energy and nutrients from plant material. Leaf-cutter ants are a paradigmatic example, having tremendous impact on their ecosystems as dominant generalist herbivores through cultivation of a fungus, Leucoagaricus gongylophorous. Here we examine how this mutualism could facilitate the flexible substrate incorporation of the ants by providing leaf-cutter ant subcolonies four substrate types: leaves, flowers, oats, and a mixture of all three. Through metaproteomic analysis of the fungus gardens, we were able to identify and quantify 1766 different fungal proteins, including 161 biomass-degrading enzymes. This analysis revealed that fungal protein profiles were significantly different between subcolonies fed different substrates with the highest abundance of cellulolytic enzymes observed in the leaf and flower treatments. When the fungus garden is provided with leaves and flowers, which contain the majority of their energy in recalcitrant material, it increases its production of proteins that break down cellulose: endoglucanases, exoglucanase and β-glucosidase. Further, the complete metaproteomes for the leaves and flowers treatments were very similar, the mixed treatment closely resembled the treatment with oats alone. This suggests that when provided a mixture of substrates, the fungus garden preferentially produces enzymes necessary for breakdown of simpler, more digestible substrates. This flexible, substrate-specific response of the fungal cultivar allows the leaf-cutter ants to derive energy from a wide range of substrates, which may contribute to their ability to be dominant generalist herbivores.

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Energy Technology Data Exchange (ETDEWEB)

Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

2014-07-15

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Various compositions containing organic substrates to produce Eugenia uniflora L. seedlings

Directory of Open Access Journals (Sweden)

Licielo Romero Vieira

2015-09-01

Full Text Available The use of substrates formulated with agro-industrial residues, such as coconut shell fiber, sawdust, and carbonized rice husk, is among the sustainable alternatives to decrease the production costs of seedlings of plant species. This study aimed to evaluate the use of various substrates for obtaining high quality Eugenia uniflora L. seedlings. The experiment was conducted at the Federal University of Pampa (UNIPAMPA – Campus in São Gabriel, Rio Grande do Sul, Brazil, by sowing directly into 200 cm3 polypropylene tubes, testing various substrates (50% commercial substrate Plantmax® + 50% rice husk; commercial substrate Plantmax®; 50% commercial substrate Plantmax® + 50% coconut shell fiber; and 50% commercial substrate Plantmax® + 50% sawdust. Every 3 days, the number of emerged seedlings was evaluated and, after 180 days, the following morphological features were analyzed: shoot height, stem diameter, number of leaves, root and total fresh weight, shoot, root, and total dry weight, and Dickson’s quality index. The results indicate that all substrates were suitable for Eugenia uniflora emergence, but that containing 50% commercial substrate Plantmax® + 50% sawdust provided a delay in the emergence of this Myrtaceae; also, substrates containing 50% commercial substrate Plantmax® + 50% husk rice and 50% commercial substrate Plantmax® + 50% coconut shell fiber showed to be satisfactory for the growth of Eugenia uniflora seedlings.

Mapping the lattice-vibration potential using terahertz pulses

Science.gov (United States)

Korpa, C. L.; Tóth, Gy; Hebling, J.

2018-02-01

We develop a method for mapping the anharmonic lattice potential using the time-dependent electric field of the transmitted pulse through thin sample supported by a substrate of non-negligible thickness. Assuming linear propagation in the substrate we fully take into account internal reflection in it while the sample can show arbitrary nonlinear response. We examine the effect of frequency averaging appropriate for broad-band pulse and compare the results taking into account the full frequency dependence. We illustrate the procedure applying it to a model based on recently observed ferroelectric soft mode nonlinearity in SrTiO3.

Lattice and Phase Diagram in QCD

International Nuclear Information System (INIS)

Lombardo, Maria Paola

2008-01-01

Model calculations have produced a number of very interesting expectations for the QCD Phase Diagram, and the task of a lattice calculations is to put these studies on a quantitative grounds. I will give an overview of the current status of the lattice analysis of the QCD phase diagram, from the quantitative results of mature calculations at zero and small baryochemical potential, to the exploratory studies of the colder, denser phase.

Permanent magnetic lattices for ultracold atoms and quantum degenerate gases

International Nuclear Information System (INIS)

Ghanbari, Saeed; Kieu, Tien D; Sidorov, Andrei; Hannaford, Peter

2006-01-01

We propose the use of periodic arrays of permanent magnetic films for producing magnetic lattices of microtraps for confining, manipulating and controlling small clouds of ultracold atoms and quantum degenerate gases. Using analytical expressions and numerical calculations we show that periodic arrays of magnetic films can produce one-dimensional (1D) and two-dimensional (2D) magnetic lattices with non-zero potential minima, allowing ultracold atoms to be trapped without losses due to spin flips. In particular, we show that two crossed layers of periodic arrays of parallel rectangular magnets plus bias fields, or a single layer of periodic arrays of square-shaped magnets with three different thicknesses plus bias fields, can produce 2D magnetic lattices of microtraps having non-zero potential minima and controllable trap depth. For arrays with micron-scale periodicity, the magnetic microtraps can have very large trap depths (∼0.5 mK for the realistic parameters chosen for the 2D lattice) and very tight confinement

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

Science.gov (United States)

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Surface green function matching for a three-dimensional non-local continuum

International Nuclear Information System (INIS)

Idiodi, J.O.A.

1985-07-01

With a view toward helping to bridge the gap, from the continuum side, between discrete and continuum models of crystalline, elastic solids, explicit results are presented for non-local stress tensors that describe exactly some lattice dynamical models that have been widely used in the literature for cubic lattices. The Surface Green Function Matching (SGFM) method, which has been used successfully for a variety of surface problems, is then extended, within a continuum approach, to a non-local continuum that models a three-dimensional discrete lattice. The practical use of the method is demonstrated by performing a fairly complete analytical study of the vibrational surface modes of the SCC semi-infinite medium. Some results are presented for the [100] direction of the (001) surface of the SCC lattice. (author)

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Science.gov (United States)

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Impact of substrate corrugation on the sliding friction levels of adsorbed films.

Science.gov (United States)

Coffey, T; Krim, J

2005-08-12

We report a quartz crystal microbalance (QCM) study of sliding friction for solid xenon monolayers at 77 K on Cu(111), Ni(111), graphene/Ni(111), and C(60) substrates. Simulations have predicted a strong dependence of phononic friction coefficient (eta) on surface corrugation in systems with similar lattice spacing, eta approximately U(2)(0), but this has never before been shown experimentally. In order to make direct comparisons with theory, substrates with similar lattice spacing but varying amplitudes of surface corrugation were studied. QCM data reveal friction levels proportional to U(2)(0), validating current theoretical and numerical predictions. Measurements of Xe/C(60) are also included for comparison purposes.

Effects of Radiative Recombination and Photon Recycling on Minority Carrier Lifetime in Epitaxial GaINAsSb Lattice-matched to GaSb

International Nuclear Information System (INIS)

S Anikeev; D Donetsky; G Belenky; S Luryl; CA Wang; DA Shiau; M Dashiell; J Beausang; G Nichols

2004-01-01

Radiative coefficient (B) is a fundamental recombination parameter which is of importance for a variety of optoelectronic minority carrier devices. Radiative recombination was comprehensively studied for wide-bandgap III-V compounds, while for 0.5-0.6 eV materials experimental data are quite limited and demonstrate significant spreading. Here we report excess carrier lifetime in isotype double heterostructures (DHs) of 0.54-eV p-GaInAsSb capped with p-AlGaAsSb, and grown lattice-matched to GaSb. Lifetime was measured by time-resolved photoluminescence (dynamic lifetime) as well as by optical response to sinusoidal excitation (static lifetime). Wide range of GaInAsSb layer thickness was used to separate contributions from interface and radiative recombination processes. Radiative coefficient and recombination velocity at GaInAsSb/AlGaAsSb heterointerface were determined. Temperature dependence of lifetime demonstrated significant contribution of radiative effects to the total recombination

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

Science.gov (United States)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Vibrational spectra and thermal rectification in three-dimensional anharmonic lattices

International Nuclear Information System (INIS)

Lan Jinghua; Li Baowen

2007-01-01

We study thermal rectification in a three-dimensional model consisting of two segments of anharmonic lattices. One segment consists of layers of harmonic oscillator arrays coupled to a substrate potential, which is a three-dimensional Frenkel-Kontorova model, and the other segment is a three-dimensional Fermi-Pasta-Ulam model. We study the vibrational bands of the two lattices analytically and numerically, and find that, by choosing the system parameters properly, the rectification can be as high as a few thousands, which is high enough to be observed in experiment. Possible experiments in nanostructures are discussed

Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

2014-12-01

Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

A new nitrilase-producing strain named Rhodobacter sphaeroides LHS-305: biocatalytic characterization and substrate specificity.

Science.gov (United States)

Yang, Chunsheng; Wang, Xuedong; Wei, Dongzhi

2011-12-01

The characteristics of the new nitrilase-producing strain Rhodobacter sphaeroides LHS-305 were investigated. By investigating several parameters influencing nitrilase production, the specific cell activity was ultimately increased from 24.5 to 75.0 μmol g(-1) min(-1), and hereinto, the choice of inducer proved the most important factor. The aromatic nitriles (such as 3-cyanopyridine and benzonitrile) were found to be the most favorable substrates of the nitrilase by analyzing the substrate spectrum. It was speculated that the unsaturated carbon atom attached to the cyano group was crucial for this type of nitrilase. The value of apparent K (m), substrate inhibition constant, and product inhibition constant of the nitrilase against 3-cyanopyridine were 4.5 × 10(-2), 29.2, and 8.6 × 10(-3) mol L(-1), respectively. When applied in nicotinic acid preparation, the nitrilase is able to hydrolyze 200 mmol L(-1) 3-cyanopyridine with 93% conversion rate in 13 h by 6.1 g L(-1) cells (dry cell weight).

Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La5/8-yPryCa3/8MnO3 films

International Nuclear Information System (INIS)

Hu, Sixia; Wang, Haibo; Dong, Yongqi; Hong, Bing; He, Hao; Bao, Jun; Huang, Haoliang; Yang, Yuanjun; Luo, Zhenlin; Yang, Mengmeng; Gao, Chen

2014-01-01

Large scale electronic phase separation (EPS) between ferromagnetic metallic and charge-ordered insulating phases in La 5/8-y Pr y Ca 3/8 MnO 3 (y = 0.3) (LPCMO) is very sensitive to the structural changes. This work investigates the effects of post-annealing on the strain states and electrical transport properties of LPCMO films epitaxially grown on (001) pc SrTiO 3 (tensile strain), LaAlO 3 (compressive strain) and NdGaO 3 (near-zero strain) substrates. Before annealing, all the films are coherent-epitaxial and insulating through the measured temperature range. Obvious change of film lattice is observed during the post-annealing: the in-plane strain in LPCMO/LAO varies from −1.5% to −0.1% while that in LPCMO/STO changes from 1.6% to 1.3%, and the lattice of LPCMO/NGO keeps constant because of the good lattice-match between LPCMO and NGO. Consequently, the varied film strain leads to the emergence of metal-insulator transitions (MIT) and shift of the critical transition temperature in the electrical transport. These results demonstrate that lattice-mismatch combined with post-annealing is an effective approach to tune strain in epitaxial LPCMO films, and thus to control the EPS and MIT in the films

Structure of branching enzyme- and amylomaltase modified starch produced from well-defined amylose to amylopectin substrates

DEFF Research Database (Denmark)

Sorndecha, Waraporn; Sagnelli, Domenico; Meier, Sebastian

2016-01-01

by the molar mass rather that the branching density of the glucan per se . Our data demonstrate that a higher amylose content in the substrate starch efficiently produces α-1,6 glucosidic linkages and that the present of amylose generates a higher Μw and more resistant product than amylopectin. The combination...

On Traveling Waves in Lattices: The Case of Riccati Lattices

Science.gov (United States)

Dimitrova, Zlatinka

2012-09-01

The method of simplest equation is applied for analysis of a class of lattices described by differential-difference equations that admit traveling-wave solutions constructed on the basis of the solution of the Riccati equation. We denote such lattices as Riccati lattices. We search for Riccati lattices within two classes of lattices: generalized Lotka-Volterra lattices and generalized Holling lattices. We show that from the class of generalized Lotka-Volterra lattices only the Wadati lattice belongs to the class of Riccati lattices. Opposite to this many lattices from the Holling class are Riccati lattices. We construct exact traveling wave solutions on the basis of the solution of Riccati equation for three members of the class of generalized Holling lattices.

High bandgap III-V alloys for high efficiency optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Source-to-accelerator quadrupole matching section for a compact linear accelerator

Science.gov (United States)

Seidl, P. A.; Persaud, A.; Ghiorso, W.; Ji, Q.; Waldron, W. L.; Lal, A.; Vinayakumar, K. B.; Schenkel, T.

2018-05-01

Recently, we presented a new approach for a compact radio-frequency (RF) accelerator structure and demonstrated the functionality of the individual components: acceleration units and focusing elements. In this paper, we combine these units to form a working accelerator structure: a matching section between the ion source extraction grids and the RF-acceleration unit and electrostatic focusing quadrupoles between successive acceleration units. The matching section consists of six electrostatic quadrupoles (ESQs) fabricated using 3D-printing techniques. The matching section enables us to capture more beam current and to match the beam envelope to conditions for stable transport in an acceleration lattice. We present data from an integrated accelerator consisting of the source, matching section, and an ESQ doublet sandwiched between two RF-acceleration units.

LATTICE: an interactive lattice computer code

International Nuclear Information System (INIS)

Staples, J.

1976-10-01

LATTICE is a computer code which enables an interactive user to calculate the functions of a synchrotron lattice. This program satisfies the requirements at LBL for a simple interactive lattice program by borrowing ideas from both TRANSPORT and SYNCH. A fitting routine is included

Ultracold Dipolar Gases in Optical Lattices

OpenAIRE

Trefzger, C.; Menotti, C.; Capogrosso-Sansone, B.; Lewenstein, M.

2011-01-01

This tutorial is a theoretical work, in which we study the physics of ultra-cold dipolar bosonic gases in optical lattices. Such gases consist of bosonic atoms or molecules that interact via dipolar forces, and that are cooled below the quantum degeneracy temperature, typically in the nK range. When such a degenerate quantum gas is loaded into an optical lattice produced by standing waves of laser light, new kinds of physical phenomena occur. These systems realize then extended Hubbard-type m...

Lattice gauge theories

International Nuclear Information System (INIS)

Hasenfratz, A.; Hasenfratz, P.

1985-01-01

This paper deals almost exclusively with applications in QCD. Presumably QCD will remain in the center of lattice calculations in the near future. The existing techniques and the available computer resources should be able to produce trustworthy results in pure SU(3) gauge theory and in quenched hadron spectroscopy. Going beyond the quenched approximation might require some technical breakthrough or exceptional computer resources, or both. Computational physics has entered high-energy physics. From this point of view, lattice QCD is only one (although the most important, at present) of the research fields. Increasing attention is devoted to the study of other QFTs. It is certain that the investigation of nonasymptotically free theories, the Higgs phenomenon, or field theories that are not perturbatively renormalizable will be important research areas in the future

Short period strain balanced gallium arsenide nitride/indium arsenide nitride superlattice lattice matched to indium phosphide for mid-infrared photovoltaics

Science.gov (United States)

Bhusal, Lekhnath

Dilute nitrogen-containing III-V-N alloys have been intensively studied for their unusual electronic and optical behavior in the presence of a small amount of nitrogen. Those behaviors can further be manipulated, with a careful consideration of the strain and strain balancing, for example, in the context of a strain-balanced superlattice (SL) based on those alloys. In this work, the k.p approximation and the band anti-crossing model modified for the strain have been used to describe the electronic states of the strained bulk-like GaAs1-xNx and InAs 1-yNy ternaries in the vicinity of the center of the Brillouin zone (Gamma-point). Band-offsets between the conduction and valence bands of GaAs1-xNx and InAs1-yN y have also been evaluated, before implementing them into the SL structure. By minimizing the total mechanical energy of the stack of the alternating layers of GaAs1-xNx and InAs1-yNy in the SL, the ratio of the thicknesses of the epilayers is determined to make the structure lattice-matching on the InP(001), through the strain-balancing. Mini-band energies of the strain-balanced GaAs1-xNx/InAs 1-yNy short-period SL on InP(001) is then investigated using the transfer matrix formalism. This enabled identifying the evolution of the band edge transition energies of the superlattice structure for different nitrogen compositions. Results show the potential of the new proposed design to exceed the existing limits of bulk-like InGaAsN alloys and offer the applications for photon absorption/emission energies in the range of ~0.65-0.35eV at 300K for a typical nitrogen composition of ≤5%. The optical absorption coefficient of such a SL is then estimated under the anisotropic medium approximation, where the optical absorption of the bulk structure is modified according to the anisotropy imposed by the periodic potential in the growth direction. As an application, the developed SL structure is used to investigate the performance of double, triple and quadruple junction

Molecular dynamics simulation of thin film interfacial strength dependency on lattice mismatch

International Nuclear Information System (INIS)

Yang, Zhou; Lian, Jie; Wang, Junlan

2013-01-01

Laser-induced thin film spallation experiments have been previously developed to characterize the intrinsic interfacial strength of thin films. In order to gain insights of atomic level thin film debonding processes and the interfacial strength dependence on film/substrate lattice structures, in this study, molecular dynamics simulations of thin film interfacial failure under laser-induced stress waves were performed. Various loading amplitudes and pulse durations were employed to identify the optimum simulation condition. Stress propagation as a function of time was revealed in conjunction with the interface structures. Parametric studies confirmed that while the interfacial strength between a thin film and a substrate does not depend on the film thickness and the duration of the laser pulse, a thicker film and a shorter duration do provide advantage to effectively load the interface to failure. With the optimized simulation condition, further studies were focused on bulk Au/Au bi-crystals with mismatched orientations, and Ni/Al, Cu/Al, Cu/Ag and Cu/Au bi-crystals with mismatched lattices. The interfacial strength was found to decrease with increasing orientation mismatch and lattice mismatch but more significantly dominated by the bonding elements' atomic structure and valence electron occupancy. - Highlights: • Molecular dynamics simulation was done on stress wave induced thin film spallation. • Atomic structure was found to be a primary strength determining factor. • Lattice mismatch was found to be a secondary strength determining factor

Egg-laying substrate selection for optimal camouflage by quail.

Science.gov (United States)

Lovell, P George; Ruxton, Graeme D; Langridge, Keri V; Spencer, Karen A

2013-02-04

Camouflage is conferred by background matching and disruption, which are both affected by microhabitat. However, microhabitat selection that enhances camouflage has only been demonstrated in species with discrete phenotypic morphs. For most animals, phenotypic variation is continuous; here we explore whether such individuals can select microhabitats to best exploit camouflage. We use substrate selection in a ground-nesting bird (Japanese quail, Coturnix japonica). For such species, threat from visual predators is high and egg appearance shows strong between-female variation. In quail, variation in appearance is particularly obvious in the amount of dark maculation on the light-colored shell. When given a choice, birds consistently selected laying substrates that made visual detection of their egg outline most challenging. However, the strategy for maximizing camouflage varied with the degree of egg maculation. Females laying heavily maculated eggs selected the substrate that more closely matched egg maculation color properties, leading to camouflage through disruptive coloration. For lightly maculated eggs, females chose a substrate that best matched their egg background coloration, suggesting background matching. Our results show that quail "know" their individual egg patterning and seek out a nest position that provides most effective camouflage for their individual phenotype. Copyright © 2013 Elsevier Ltd. All rights reserved.

The heavy quark-antiquark potential from lattice and perturbative QCD

OpenAIRE

Laschka, Alexander; Kaiser, Norbert; Weise, Wolfram

2009-01-01

The heavy quark-antiquark potential in perturbative QCD is subject to ambiguities. We show how to derive a well-defined and stable short-distance potential that can be matched to results from lattice QCD simulations at intermediate distances. The static potential as well as the order 1/m potential are discussed.

Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures

Science.gov (United States)

Hao, L.; Zhang, Z. F.; Xie, X. N.; Wang, H. R.; Yu, Q. X.; Zhu, H.

2015-10-01

Using magnetron sputtering and annealing techniques, we have prepared SrCoOx films on LaAlO3 and SrTiO3 substrates. Distinctly different structures of the films have been found on the two substrates. It is suggested that positive lattice mismatch between film and substrate promotes SrCoO2.5 films with an orthorhombic structure grown on SrTiO3 substrate, whereas negative lattice mismatch from LaAlO3 substrate is in favor of increasing the valence state of Co and thus the growth of oxygen-rich SrCoOx with a tetragonal structure. In addition to the structural characterization, magnetic and electrical measurements confirm that the oxygen content x is between 2.75 and 2.88 for the latter. Reversibility of the topotactic phase transformation between SrCoO2.5 and the oxygen-rich SrCoOx films has also been studied by changing the oxygen pressure during annealing process. Even in the presence of a negative lattice mismatch, the results reveal that the tetragonal SrCoOx films on LaAlO3 substrate retain high oxygen mobility identified before in cubic SrCoOx films.

Steady-State Anderson Accelerated Coupling of Lattice Boltzmann and Navier–Stokes Solvers

KAUST Repository

Atanasov, Atanas; Uekermann, Benjamin; Pachajoa Mejí a, Carlos; Bungartz, Hans-Joachim; Neumann, Philipp

2016-01-01

to the fullest extent and yields enhanced control to match the LB and NS degrees of freedom within the LBNS overlap layer. Designed for parallel Schwarz coupling, the Anderson acceleration allows for the simultaneous execution of both Lattice Boltzmann and Navier

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Energy Technology Data Exchange (ETDEWEB)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Phenotypic and genomic analysis of serotype 3 Sabin poliovirus vaccine produced in MRC-5 cell substrate.

Science.gov (United States)

Alirezaie, Behnam; Taqavian, Mohammad; Aghaiypour, Khosrow; Esna-Ashari, Fatemeh; Shafyi, Abbas

2011-05-01

The cell substrate has a pivotal role in live virus vaccines production. It is necessary to evaluate the effects of the cell substrate on the properties of the propagated viruses, especially in the case of viruses which are unstable genetically such as polioviruses, by monitoring the molecular and phenotypical characteristics of harvested viruses. To investigate the presence/absence of mutation(s), the near full-length genomic sequence of different harvests of the type 3 Sabin strain of poliovirus propagated in MRC-5 cells were determined. The sequences were compared with genomic sequences of different virus seeds, vaccines, and OPV-like isolates. Nearly complete genomic sequencing results, however, revealed no detectable mutations throughout the genome RNA-plaque purified (RSO)-derived monopool of type 3 OPVs manufactured in MRC-5. Thirty-six years of experience in OPV production, trend analysis, and vaccine surveillance also suggest that: (i) different monopools of serotype 3 OPV produced in MRC-5 retained their phenotypic characteristics (temperature sensitivity and neuroattenuation), (ii) MRC-5 cells support the production of acceptable virus yields, (iii) OPV replicated in the MRC-5 cell substrate is a highly efficient and safe vaccine. These results confirm previous reports that MRC-5 is a desirable cell substrate for the production of OPV. Copyright © 2011 Wiley-Liss, Inc.

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

How robust will the RHIC lattice be during commissioning?

International Nuclear Information System (INIS)

Ohnuma, S.

1991-09-01

The question raised here is whether the RHIC lattice is robust enough to make all these commissioning manipulations possible. There are of course many factors involved in answering this question in a definitive manner. The purpose of this note is to see if there are any fundamental and serious shortcomings basic to the lattice. The lattice considered here is the one presented to the workshop by Steve Tepikian and called RHIC91. More specifically, we fix nine quadrupole parameters in all insertions except in the 6 o'clock insertion where the independent parameters is sixteen. The so-called perfect matching may require fourteen parameters instead of nine but the difference is insignificant. On the other hand, if the number of parameters is reduced from sixteen to nine in the 6 o'clock insertion, the mismatch in the arc beta function becomes non-trivial. For example, the horizontal beta may vary between 40m to 60m at QF locations

GaN-based light-emitting diodes on various substrates: a critical review.

Science.gov (United States)

Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Wang, Haiyan; Lin, Zhiting; Zhou, Shizhong

2016-05-01

GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

Double-beta decay processes from lattice quantum chromodynamics

Science.gov (United States)

Davoudi, Zohreh; Tiburzi, Brian; Wagman, Michael; Winter, Frank; Chang, Emmanuel; Detmold, William; Orginos, Kostas; Savage, Martin; Shanahan, Phiala; Nplqcd Collaboration

2017-09-01

While an observation of neutrinoless double-beta decay in upcoming experiments will establish that the neutrinos are Majorana particles, the underlying new physics responsible for this decay can only be constrained if the theoretical predictions of the rate are substantially refined. This talk demonstrates the roadmap in connecting the underlying high-scale theory to the corresponding nuclear matrix elements, focusing mainly on the nucleonic matrix elements in the simplest extension of Standard Model in which a light Majorana neutrino is mediating the process. The role of lattice QCD and effective field theory in this program, in particular, the prospect of a direct matching of the nn to pp amplitude to lattice QCD will be discussed. As a first step towards this goal, the results of the first lattice QCD calculation of the relevant matrix element for neutrinofull double-beta decay will be presented, albeit with unphysical quark masses, along with important lessons that could impact the calculations of nuclear matrix elements involved in double-beta decays of realistic nuclei.

Color fields of the static pentaquark system computed in SU(3) lattice QCD

Science.gov (United States)

Cardoso, Nuno; Bicudo, Pedro

2013-02-01

We compute the color fields of SU(3) lattice QCD created by static pentaquark systems, in a 243×48 lattice at β=6.2 corresponding to a lattice spacing a=0.07261(85)fm. We find that the pentaquark color fields are well described by a multi-Y-type shaped flux tube. The flux tube junction points are compatible with Fermat-Steiner points minimizing the total flux tube length. We also compare the pentaquark flux tube profile with the diquark-diantiquark central flux tube profile in the tetraquark and the quark-antiquark fundamental flux tube profile in the meson, and they match, thus showing that the pentaquark flux tubes are composed of fundamental flux tubes.

Color fields computed in SU(3) lattice QCD for the static tetraquark system

International Nuclear Information System (INIS)

Cardoso, Nuno; Cardoso, Marco; Bicudo, Pedro

2011-01-01

The color fields created by the static tetraquark system are computed in quenched SU(3) lattice QCD, in a 24 3 x48 lattice at β=6.2 corresponding to a lattice spacing a=0.07261(85) fm. We find that the tetraquark color fields are well described by a double-Y, or butterfly, shaped flux tube. The two flux-tube junction points are compatible with Fermat points minimizing the total flux-tube length. We also compare the diquark-diantiquark central flux-tube profile in the tetraquark with the quark-antiquark fundamental flux-tube profile in the meson, and they match, thus showing that the tetraquark flux tubes are composed of fundamental flux tubes.

Lattice calculations in gauge theory

International Nuclear Information System (INIS)

Rebbi, C.

1985-01-01

The lattice formulation of quantum gauge theories is discussed as a viable technique for quantitative studies of nonperturbative effects in QCD. Evidence is presented to ascertain that whole classes of lattice actions produce a universal continuum limit. Discrepancies between numerical results from Monto Carlo simulations for the pure gauge system and for the system with gauge and quark fields are discussed. Numerical calculations for QCD require very substantial computational resources. The use of powerful vector processors of special purpose machines, in extending the scope and magnitude or the calculations is considered, and one may reasonably expect that in the near future good quantitative predictions will be obtained for QCD

Flux vortex dynamics and electric fields in matched pinning systems

International Nuclear Information System (INIS)

Blamire, M.G.

1987-01-01

The pinning of flux vortices in type II superconductors has been the subject of extensive research. Certain experiments have attempted to investigate this problem by the use of specially prepared pinning structures consisting of regular arrays of pinning centers. In this paper a theory relating to such experiments is described. This theory is based on the existence and properties of defects in an otherwise perfect vortex lattice which is commensurate with a pinning array consisting of a triangular lattice of holes in a superconducting thin film. A quantitative treatment predicts the existence and position of substructure on the critical current versus magnetic field curves in addition to the main peaks previously predicted to occur when the vortex and hole lattices are exactly matched. The theory also qualitatively describes the overall shape of these curves. An analysis of the temperature dependence of this substructure shows broad agreement with existing experimental results. The application of this theory to future experiments should allow a detailed investigation of vortex lattice elasticity and flux flow

Lattice QCD

International Nuclear Information System (INIS)

Hasenfratz, P.

1983-01-01

The author presents a general introduction to lattice gauge theories and discusses non-perturbative methods in the gauge sector. He then shows how the lattice works in obtaining the string tension in SU(2). Lattice QCD at finite physical temperature is discussed. Universality tests in SU(2) lattice QCD are presented. SU(3) pure gauge theory is briefly dealt with. Finally, fermions on the lattice are considered. (Auth.)

Micropatterning of bacteria on two-dimensional lattice protein surface observed by atomic force microscopy

International Nuclear Information System (INIS)

Oh, Y.J.; Jo, W.; Lim, J.; Park, S.; Kim, Y.S.; Kim, Y.

2008-01-01

In this study, we characterized the two-dimensional lattice of bovine serum albumin (BSA) as a chemical and physical barrier against bacterial adhesion, using fluorescence microscopy and atomic force microscopy (AFM). The lattice of BSA on glass surface was fabricated by micro-contact printing (μCP), which is a useful way to pattern a wide range of molecules into microscale features on different types of substrates. The contact-mode AFM measurements showed that the average height of the printed BSA monolayer was 5-6 nm. Escherichia coli adhered rapidly on bare glass slide, while the bacterial adhesion was minimized on the lattices in the range of 1-3 μm 2 . Especially, the bacterial adhesion was completely inhibited on a 1 μm 2 lattice. The results suggest that the anti-adhesion effects are due by the steric repulsion forces exerted by BSA

The behavior of lattice defects produced in Al2O3 irradiated by neutrons at high temperatures

International Nuclear Information System (INIS)

Atobe, K.; Koizumi, T.; Okada, M.

2003-01-01

Single crystals of α-Al 2 O 3 were irradiated by the two reactors, KUR and JMTR, at three different temperatures. Lattice defects produced by irradiation were studied by esr (electron spin resonance). Three kinds of esr spectram, which are denoted as A, B and C spectram, are observed. The spectram A was observed at three different irradiation temperatures and was ascribed to oxygen vacancies. The spectram B showed no angular dependence for the rotation of external magnetic field to the crystal axis, and the defect density of this spectram decreased with an increase of annealing temperature. When the specimen was annealed at 400 degC after irradiation at 200 degC, the spectram C was observed and was presumed to be due to Al-colloids. (Y. Kazumata)

Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy

Directory of Open Access Journals (Sweden)

Andrei Sokolov

2016-05-01

Full Text Available The effect of substrates on the magnetic and transport properties of Ni2Mn1.5In0.5 ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM austenite and ferrimagnetic (FiM martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni2Mn1.5In0.5 films grown on MgO (001 substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni2Mn1.5In0.5 film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering.

Non-perturbative renormalization of static-light four-fermion operators in quenched lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Palombi, F. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany); Papinutto, M.; Pena, C. [CERN, Geneva (Switzerland). Physics Dept., Theory Div.; Wittig, H. [Mainz Univ. (Germany). Inst. fuer Kernphysik

2007-06-15

We perform a non-perturbative study of the scale-dependent renormalization factors of a multiplicatively renormalizable basis of {delta}B=2 parity-odd four-fermion operators in quenched lattice QCD. Heavy quarks are treated in the static approximation with various lattice discretizations of the static action. Light quarks are described by nonperturbatively O(a) improved Wilson-type fermions. The renormalization group running is computed for a family of Schroedinger functional (SF) schemes through finite volume techniques in the continuum limit. We compute non-perturbatively the relation between the renormalization group invariant operators and their counterparts renormalized in the SF at a low energy scale. Furthermore, we provide non-perturbative estimates for the matching between the lattice regularized theory and all the SF schemes considered. (orig.)

Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

International Nuclear Information System (INIS)

Melikhova, O; Čížek, J; Procházka, I; Kužel, R; Novotný, M; Bulír, J; Lancok, J; Anwand, W; Brauer, G; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P

2013-01-01

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20–100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.

Electron-lattice Interaction and Nonlinear Excitations in Cuprate Structures

International Nuclear Information System (INIS)

Paulsen, J.; Eschrig, H.; Drechsler, S.L.; Malek, J.

1995-01-01

A low temperature lattice modulation of the chains of the YBa 2 Cu 3 O 7 is considered by deriving a Hamiltonian of electron-lattice interaction from density-functional calculations for deformed lattice and solving it for the groundstate. Hubbard-type Coulomb interaction is included. The obtained groundstate is a charge-density-wave state with a pereodicity of four lattice constants and a gap for one-electron excitations of about 1eV, sensitively depending on parameters of the Hamiltonian. There are lots of polaronic and solitonic excitations with formation energies deep in the gap, which can pin the Fermi level and thus produce again metallicity of the chain. They might also contribute to pairing of holes in adjacent CuO 2 -planes. (author)

Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

KAUST Repository

Vlček, Marián

2015-07-01

A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

KAUST Repository

Vlček, Mariá n; Luká č, František; Vlach, Martin; Prochá zka, Ivan; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid; Gemma, Ryota; Čí žek, Jakub

2015-01-01

A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

Science.gov (United States)

Xie, Yali; Zhan, Qingfeng; Shang, Tian; Yang, Huali; Wang, Baomin; Tang, Jin; Li, Run-Wei

2017-05-01

We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO) and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO) displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

Directory of Open Access Journals (Sweden)

Yali Xie

2017-05-01

Full Text Available We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

How to Produce S-Tense Operators on Lattice Effect Algebras

Science.gov (United States)

Chajda, Ivan; Janda, Jiří; Paseka, Jan

2014-07-01

Tense operators in effect algebras play a key role for the representation of the dynamics of formally described physical systems. For this, it is important to know how to construct them on a given effect algebra and how to compute all possible pairs of tense operators on . However, we firstly need to derive a time frame which enables these constructions and computations. Hence, we usually apply a suitable set of states of the effect algebra in question. To approximate physical reality in quantum mechanics, we use only the so-called Jauch-Piron states on in our paper. To realize our constructions, we are restricted on lattice effect algebras only.

Lattice QCD for Baryon Rich Matter – Beyond Taylor Expansions

Energy Technology Data Exchange (ETDEWEB)

Bornyakov, V. [ITEP, B. Cheremushkinskaya 25, Moscow, 117218 (Russian Federation); School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Boyda, D. [School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Goy, V. [School of Natural Sciences, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Molochkov, A. [School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Nakamura, A. [School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Research Center for Nuclear Physics (RCNP), Osaka University, Ibaraki, Osaka, 567-0047 (Japan); Theoretical Research Division, Nishina Center, RIKEN, Wako 351-0198 (Japan); Nikolaev, A. [School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Zakharov, V.I. [ITEP, B. Cheremushkinskaya 25, Moscow, 117218 (Russian Federation); School of Biomedicine, Far Eastern Federal University, Sukhanova 8, Vladivostok 690950 (Russian Federation); Moscow Inst Phys & Technol, Dolgoprudny, Moscow Region, 141700 (Russian Federation)

2016-12-15

We discuss our study for exploring the QCD phase diagram based on the lattice QCD. To go beyond the Taylor expansion and to reach higher density regions, we employ the canonical approach. In order to produce lattice data which meet experimental situation as much as possible, we propose a canonical approach with the charge and baryon number. We present our lattice QCD GPU code for this project which employs the clover improved Wilson fermions and Iwasaki gauge action to investigate pure imaginary chemical potential.

Lattice QCD for Baryon Rich Matter – Beyond Taylor Expansions

International Nuclear Information System (INIS)

Bornyakov, V.; Boyda, D.; Goy, V.; Molochkov, A.; Nakamura, A.; Nikolaev, A.; Zakharov, V.I.

2016-01-01

We discuss our study for exploring the QCD phase diagram based on the lattice QCD. To go beyond the Taylor expansion and to reach higher density regions, we employ the canonical approach. In order to produce lattice data which meet experimental situation as much as possible, we propose a canonical approach with the charge and baryon number. We present our lattice QCD GPU code for this project which employs the clover improved Wilson fermions and Iwasaki gauge action to investigate pure imaginary chemical potential.

Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3 (LBM) films and LBM/BaTiO3/LBM heterostructures

Science.gov (United States)

Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.; Lourenço, A. A. C. S.; Amaral, V. S.

2017-12-01

Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced lattice mismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses of the films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm on both substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is further investigated. It is known that the crystal structure of substrates and imposed tensile strain affect the physical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate shows out-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The magnetic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 K and 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si substrate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ions into magnetic layer. Meanwhile, the Tc in LBMBTs increases in respect to other studied single layers and heterostructure, because of higher tensile strain induced at the interfaces.

Nonlinear electrostrictive lattice response of EuTiO3

Science.gov (United States)

Pappas, P.; Calamiotou, M.; Köhler, J.; Bussmann-Holder, A.; Liarokapis, E.

2017-07-01

An epitaxial EuTiO3 (ETO) film grown on the SrTiO3 substrate was studied at room temperature with synchrotron XRD and in situ application of an electric field (nominally up to 7.8 kV/cm) in near grazing incidence geometry, in order to monitor the response of the lattice to the field. 2D diffraction images show that apparently misoriented coherently diffracting domains are present close to the surface whereas the film diffracts more as a single crystal towards the interface. Diffraction intensity profiles recorded from the near surface region of the EuTiO3 film showed systematic modifications upon the application of the electric field, indicating that at a critical electric field (nominally above 3.1 kV/cm), there is a clear change in the lattice response to the field, which was much stronger when the field was almost parallel to the diffraction vector. The data suggest that the ETO film, nominally paraelectric at room temperature, transforms under the application of a critical electric field to piezoelectric in agreement with a theoretical analysis based on a double-well potential. In order to exclude effects arising from the substrate, this has been investigated separately and shown not to be affected by the field.

Lattice-induced nonadiabatic frequency shifts in optical lattice clocks

International Nuclear Information System (INIS)

Beloy, K.

2010-01-01

We consider the frequency shift in optical lattice clocks which arises from the coupling of the electronic motion to the atomic motion within the lattice. For the simplest of three-dimensional lattice geometries this coupling is shown to affect only clocks based on blue-detuned lattices. We have estimated the size of this shift for the prospective strontium lattice clock operating at the 390-nm blue-detuned magic wavelength. The resulting fractional frequency shift is found to be on the order of 10 -18 and is largely overshadowed by the electric quadrupole shift. For lattice clocks based on more complex geometries or other atomic systems, this shift could potentially be a limiting factor in clock accuracy.

Method of producing an electronic unit having a polydimethylsiloxane substrate and circuit lines

Energy Technology Data Exchange (ETDEWEB)

Davidson, James Courtney [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Tovar, Armando R [San Antonio, TX

2012-06-19

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Lattice gauge theories, confinement, strings and all that

International Nuclear Information System (INIS)

Muenster, G.

1980-11-01

In this talk I would like to give an overview over some developments in lattice gauge theory, which might be of some interest for experimental physicists. In particular, I shall try to convince you that lattice gauge theory is not only a play-ground for theorists, but is able to produce numerical results for some non-perturbative quantities. And, of course, I would like to tell you about some work, which has been done here in Hamburg. (orig.)

First-principles lattice-gas Hamiltonian revisited: O-Pd(100)

OpenAIRE

Kappus, Wolfgang

2016-01-01

The methodology of deriving an adatom lattice-gas Hamiltonian (LGH) from first principles (FP) calculations is revisited. Such LGH cluster expansions compute a large set of lateral pair-, trio-, quarto interactions by solving a set of linear equations modelling regular adatom configurations and their FP energies. The basic assumption of truncating interaction terms beyond fifth nearest neighbors does not hold when adatoms show longer range interactions, e.g. substrate mediated elastic interac...

Deposition on disordered substrates with precursor layer diffusion

Science.gov (United States)

Filipe, J. A. N.; Rodgers, G. J.; Tavassoli, Z.

1998-09-01

Recently we introduced a one-dimensional accelerated random sequential adsorption process as a model for chemisorption with precursor layer diffusion. In this paper we consider this deposition process on disordered or impure substrates. The problem is solved exactly on both the lattice and continuum and for various impurity distributions. The results are compared with those from the standard random sequential adsorption model.

Effect of lattice-gas atoms on the adsorption behaviour of thioether molecules.

Science.gov (United States)

Pan, Yi; Yang, Bing; Hulot, Catherine; Blechert, Siegfried; Nilius, Niklas; Freund, Hans-Joachim

2012-08-21

Using STM topographic imaging and spectroscopy, we have investigated the adsorption of two thioether molecules, 1,2-bis(phenylthio)benzene and (bis(3-phenylthio)-phenyl)sulfane, on noble and transition metal surfaces. The two substrates show nearly antipodal behaviour. Whereas complexes with one or two protruding centres are observed on Au(111), only flat and uniform ad-structures are found on NiAl(110). The difference is ascribed to the possibility of the thioethers to form metal-organic complexes by coordinating lattice-gas atoms on the Au(111), while only the pristine molecules adsorb on the alloy surface. The metal coordination in the first case is driven by the formation of strong Au-S bonds and enables the formation of characteristic monomer, dimer and chain-like structures of the thioethers, using the Au atoms as linkers. A similar mechanism is not available on the NiAl, because no lattice gas develops at this surface at room temperature. Our work demonstrates how surface properties, i.e. the availability of mobile ad-species, determine the interaction of organic molecules with metallic substrates.

Lattice strings

International Nuclear Information System (INIS)

Thorn, C.B.

1988-01-01

The possibility of studying non-perturbative effects in string theory using a world sheet lattice is discussed. The light-cone lattice string model of Giles and Thorn is studied numerically to assess the accuracy of ''coarse lattice'' approximations. For free strings a 5 by 15 lattice seems sufficient to obtain better than 10% accuracy for the bosonic string tachyon mass squared. In addition a crude lattice model simulating string like interactions is studied to find out how easily a coarse lattice calculation can pick out effects such as bound states which would qualitatively alter the spectrum of the free theory. The role of the critical dimension in obtaining a finite continuum limit is discussed. Instead of the ''gaussian'' lattice model one could use one of the vertex models, whose continuum limit is the same as a gaussian model on a torus of any radius. Indeed, any critical 2 dimensional statistical system will have a stringy continuum limit in the absence of string interactions. 8 refs., 1 fig. , 9 tabs

Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

Energy Technology Data Exchange (ETDEWEB)

Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

2013-12-04

We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

{alpha}{sub s} from the non-perturbatively renormalised lattice three-gluon vertex

Energy Technology Data Exchange (ETDEWEB)

Alles, B. [Pisa Univ. (Italy). Dipt. di Fisica; Henty, D.S. [Department of Physics and Astronomy, University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Panagopoulos, H. [Department of Natural Sciences, University of Cyprus, CY-1678 Nicosia (Cyprus); Parrinello, C. [Department of Mathematical Sciences, University of Liverpool, Liverpool L69 3BX (United Kingdom); Pittori, C. [L.P.T.H.E., Universite de Paris Sud, Centre d`Orsay, 91405 Orsay (France); Richards, D.G. [Department of Physics and Astronomy, University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom)]|[Fermilab, P.O. Box 500, Batavia, IL 60510 (United States)

1997-09-29

We compute the running QCD coupling on the lattice by evaluating two-point and three-point off-shell gluon Green`s functions in a fixed gauge and imposing non-perturbative renormalisation conditions on them. Our exploratory study is performed in the quenched approximation at {beta}=6.0 on 16{sup 4} and 24{sup 4} lattices. We show that, for momenta in the range 1.8-2.3 GeV, our coupling runs according to the two-loop asymptotic formula, allowing a precise determination of the corresponding {Lambda} parameter. The role of lattice artifacts and finite-volume effects is carefully analysed and these appear to be under control in the momentum range of interest. Our renormalisation procedure corresponds to a momentum subtraction scheme in continuum field theory, and therefore lattice perturbation theory is not needed in order to match our results to the anti M anti S scheme, thus eliminating a major source of uncertainty in the determination of {alpha} {sub anti} {sub M} {sub anti} {sub S}. Our method can be applied directly to the unquenched case. (orig.). 20 refs.

Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy

Energy Technology Data Exchange (ETDEWEB)

Sokolov, Andrei [Department of Physics and Astronomy, University of Nebraska at Lincoln, Lincoln, NE 68588 (United States); Kirianov, Eugene; Zlenko, Albina [Lincoln South West High School, Lincoln, NE 68512 (United States); Quetz, Abdiel; Aryal, Anil; Pandey, Sudip; Dubenko, Igor; Ali, Naushad [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Stadler, Shane [Department of Physics & Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Al-Aqtash, Nabil; Sabirianov, Renat [Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182 (United States)

2016-05-15

The effect of substrates on the magnetic and transport properties of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM) austenite and ferrimagnetic (FiM) martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni{sub 2}Mn{sub 1.5}In{sub 0.5} films grown on MgO (001) substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering.

B-physics from non-perturbatively renormalized HQET in two-flavour lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Bernardoni, Fabio; Simma, Hubert [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Blossier, Benoit; Gerardin, Antoine [Paris-11 Univ., 91 - Orsay (France). Lab. de Physique Theorique; CNRS, Orsay (France); Bulava, John [CERN, Geneva (Switzerland). Physics Department; Della Morte, Michele; Hippel, Georg M. von [Mainz Univ. (Germany). Inst. fuer Kernphysik; Fritzsch, Patrick [Humboldt-Universitaet, Berlin (Germany). Inst. fuer Physik; Garron, Nicolas [Trinity College, Dublin (Ireland). School of Mathematics; Heitger, Jochen [Muenster Univ. (Germany). Inst. fuer Theoretische Physik 1; Collaboration: ALPHA Collaboration

2012-10-15

We report on the ALPHA Collaboration's lattice B-physics programme based on N{sub f}=2 O(a) improved Wilson fermions and HQET, including all NLO effects in the inverse heavy quark mass, as well as non-perturbative renormalization and matching, to fix the parameters of the effective theory. Our simulations in large physical volume cover 3 lattice spacings a {approx} (0.08-0.05) fm and pion masses down to 190 MeV to control continuum and chiral extrapolations. We present the status of results for the b-quark mass and the B{sub (s)}-meson decay constants, f{sub B} and f{sub B{sub s}}.

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

2011-01-01

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2011-07-06

Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

Transverse Lattice Approach to Light-Front Hamiltonian QCD

CERN Document Server

Dalley, S

1999-01-01

We describe a non-perturbative procedure for solving from first principles the light-front Hamiltonian problem of SU(N) pure gauge theory in D spacetime dimensions (D>2), based on enforcing Lorentz covariance of observables. A transverse lattice regulator and colour-dielectric link fields are employed, together with an associated effective potential. We argue that the light-front vacuum is necessarily trivial for large enough lattice spacing, and clarify why this leads to an Eguchi-Kawai dimensional reduction of observables to 1+1-dimensions in the infinite N limit. The procedure is then tested by explicit calculations for 2+1-dimensional SU(infinity) gauge theory, within a first approximation to the lattice effective potential. We identify a scaling trajectory which produces Lorentz covariant behaviour for the lightest glueballs. The predicted masses, in units of the measured string tension, are in agreement with recent results from conventional Euclidean lattice simulations. In addition, we obtain the poten...

Chitooligomers preparation by chitosanase produced under solid state fermentation using shrimp by-products as substrate.

Science.gov (United States)

Nidheesh, T; Pal, Gaurav Kumar; Suresh, P V

2015-05-05

Solid state fermentation (SSF) conditions were statistically optimized for the production of chitosanase by Purpureocillium lilacinum CFRNT12 using shrimp by-products as substrate. Central composite design and response surface methodology were applied to evaluate the effect of variables and their optimization. Incubation temperature, incubation time, concentration of inoculum and yeast extract were found to influence the chitosanase production significantly. The R(2) value of 0.94 indicates the aptness of the model. The level of variables for optimal production of chitosanase was 32 ± 1°C temperature, 96 h incubation, 10.5% (w/v) inoculum, 1.05% (w/w) yeast extract and 65% (w/w) moisture content. The chitosanase production was found to increase from 2.34 ± 0.07 to 41.78 ± 0.73 units/g initial dry substrate after optimization. The crude chitosanase produced 4.43 mM of chitooligomers as exclusive end product from colloidal chitosan hydrolysis. These results indicate the potential of P. lilacinum CFRNT12 for the chitosanase production employing cost effective SSF using shrimp by-products. Copyright © 2014 Elsevier Ltd. All rights reserved.

(-201) β-Gallium oxide substrate for high quality GaN materials

KAUST Repository

Roqan, Iman S.; Mumthaz Muhammed, Mufasila

2015-01-01

(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a

Phonon-enhanced crystal growth and lattice healing

Science.gov (United States)

Buonassisi, Anthony; Bertoni, Mariana; Newman, Bonna

2013-05-28

A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.

Lattice Boltzmann simulations of attenuation-driven acoustic streaming

International Nuclear Information System (INIS)

Haydock, David; Yeomans, J M

2003-01-01

We show that lattice Boltzmann simulations can be used to model the attenuation-driven acoustic streaming produced by a travelling wave. Comparisons are made to analytical results and to the streaming pattern produced by an imposed body force approximating the Reynolds stresses. We predict the streaming patterns around a porous material in an attenuating acoustic field

Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Hu, Sixia; Wang, Haibo; Dong, Yongqi; Hong, Bing; He, Hao; Bao, Jun [National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026 (China); Huang, Haoliang [CAS Key Laboratory of Materials for Energy Conversion and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yang, Yuanjun; Luo, Zhenlin, E-mail: zlluo@ustc.edu.cn; Yang, Mengmeng; Gao, Chen, E-mail: cgao@ustc.edu.cn [National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026 (China); CAS Key Laboratory of Materials for Energy Conversion and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-06-15

Large scale electronic phase separation (EPS) between ferromagnetic metallic and charge-ordered insulating phases in La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} (y = 0.3) (LPCMO) is very sensitive to the structural changes. This work investigates the effects of post-annealing on the strain states and electrical transport properties of LPCMO films epitaxially grown on (001){sub pc} SrTiO{sub 3} (tensile strain), LaAlO{sub 3} (compressive strain) and NdGaO{sub 3} (near-zero strain) substrates. Before annealing, all the films are coherent-epitaxial and insulating through the measured temperature range. Obvious change of film lattice is observed during the post-annealing: the in-plane strain in LPCMO/LAO varies from −1.5% to −0.1% while that in LPCMO/STO changes from 1.6% to 1.3%, and the lattice of LPCMO/NGO keeps constant because of the good lattice-match between LPCMO and NGO. Consequently, the varied film strain leads to the emergence of metal-insulator transitions (MIT) and shift of the critical transition temperature in the electrical transport. These results demonstrate that lattice-mismatch combined with post-annealing is an effective approach to tune strain in epitaxial LPCMO films, and thus to control the EPS and MIT in the films.

Axial and Radial Forces of Cross-Bridges Depend on Lattice Spacing

Science.gov (United States)

Williams, C. David; Regnier, Michael; Daniel, Thomas L.

2010-01-01

Nearly all mechanochemical models of the cross-bridge treat myosin as a simple linear spring arranged parallel to the contractile filaments. These single-spring models cannot account for the radial force that muscle generates (orthogonal to the long axis of the myofilaments) or the effects of changes in filament lattice spacing. We describe a more complex myosin cross-bridge model that uses multiple springs to replicate myosin's force-generating power stroke and account for the effects of lattice spacing and radial force. The four springs which comprise this model (the 4sXB) correspond to the mechanically relevant portions of myosin's structure. As occurs in vivo, the 4sXB's state-transition kinetics and force-production dynamics vary with lattice spacing. Additionally, we describe a simpler two-spring cross-bridge (2sXB) model which produces results similar to those of the 4sXB model. Unlike the 4sXB model, the 2sXB model requires no iterative techniques, making it more computationally efficient. The rate at which both multi-spring cross-bridges bind and generate force decreases as lattice spacing grows. The axial force generated by each cross-bridge as it undergoes a power stroke increases as lattice spacing grows. The radial force that a cross-bridge produces as it undergoes a power stroke varies from expansive to compressive as lattice spacing increases. Importantly, these results mirror those for intact, contracting muscle force production. PMID:21152002

A spherically-shaped PZT thin film ultrasonic transducer with an acoustic impedance gradient matching layer based on a micromachined periodically structured flexible substrate.

Science.gov (United States)

Feng, Guo-Hua; Liu, Wei-Fan

2013-10-09

This paper presents the microfabrication of an acoustic impedance gradient matching layer on a spherically-shaped piezoelectric ultrasonic transducer. The acoustic matching layer can be designed to achieve higher acoustic energy transmission and operating bandwidth. Also included in this paper are a theoretical analysis of the device design and a micromachining technique to produce the novel transducer. Based on a design of a lead titanium zirconium (PZT) micropillar array, the constructed gradient acoustic matching layer has much better acoustic transmission efficiency within a 20-50 MHz operation range compared to a matching layer with a conventional quarter-wavelength thickness Parylene deposition. To construct the transducer, periodic microcavities are built on a flexible copper sheet, and then the sheet forms a designed curvature with a ball shaping. After PZT slurry deposition, the constructed PZT micropillar array is released onto a curved thin PZT layer. Following Parylene conformal coating on the processed PZT micropillars, the PZT micropillars and the surrounding Parylene comprise a matching layer with gradient acoustic impedance. By using the proposed technique, the fabricated transducer achieves a center frequency of 26 MHz and a -6 dB bandwidth of approximately 65%.

Manufacturing Process for OLED Integrated Substrate

Energy Technology Data Exchange (ETDEWEB)

Hung, Cheng-Hung [Vitro Flat Glass LLC, Cheswick, PA (United States). Glass Technology Center

2017-03-31

The main objective of this project was to develop a low-cost integrated substrate for rigid OLED solid-state lighting produced at a manufacturing scale. The integrated substrates could include combinations of soda lime glass substrate, light extraction layer, and an anode layer (i.e., Transparent Conductive Oxide, TCO). Over the 3⁺ year course of the project, the scope of work was revised to focus on the development of a glass substrates with an internal light extraction (IEL) layer. A manufacturing-scale float glass on-line particle embedding process capable of producing an IEL glass substrate having a thickness of less than 1.7mm and an area larger than 500mm x 400mm was demonstrated. Substrates measuring 470mm x 370mm were used in the OLED manufacturing process for fabricating OLED lighting panels in single pixel devices as large as 120.5mm x 120.5mm. The measured light extraction efficiency (calculated as external quantum efficiency, EQE) for on-line produced IEL samples (>50%) met the project’s initial goal.

Methods to introduce sub-micrometer, symmetry-breaking surface corrugation to silicon substrates to increase light trapping

Energy Technology Data Exchange (ETDEWEB)

Han, Sang Eon; Hoard, Brittany R.; Han, Sang M.; Ghosh, Swapnadip

2018-04-10

Provided is a method for fabricating a nanopatterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a plurality of symmetry-breaking surface corrugations, and removing the mask. The mask includes a pattern defined by mask material portions that cover first surface portions of the substrate and a plurality of mask space portions that expose second surface portions of the substrate, wherein the plurality of mask space portions are arranged in a lattice arrangement having a row and column, and the row is not oriented parallel to a [110] direction of the substrate. The patterning the substrate includes anisotropically removing portions of the substrate exposed by the plurality of spaces.

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Generalized isothermic lattices

International Nuclear Information System (INIS)

Doliwa, Adam

2007-01-01

We study multi-dimensional quadrilateral lattices satisfying simultaneously two integrable constraints: a quadratic constraint and the projective Moutard constraint. When the lattice is two dimensional and the quadric under consideration is the Moebius sphere one obtains, after the stereographic projection, the discrete isothermic surfaces defined by Bobenko and Pinkall by an algebraic constraint imposed on the (complex) cross-ratio of the circular lattice. We derive the analogous condition for our generalized isothermic lattices using Steiner's projective structure of conics, and we present basic geometric constructions which encode integrability of the lattice. In particular, we introduce the Darboux transformation of the generalized isothermic lattice and we derive the corresponding Bianchi permutability principle. Finally, we study two-dimensional generalized isothermic lattices, in particular geometry of their initial boundary value problem

Elimination of spurious lattice fermion solutions and noncompact lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Lee, T.D.

1997-09-22

It is well known that the Dirac equation on a discrete hyper-cubic lattice in D dimension has 2{sup D} degenerate solutions. The usual method of removing these spurious solutions encounters difficulties with chiral symmetry when the lattice spacing l {ne} 0, as exemplified by the persistent problem of the pion mass. On the other hand, we recall that in any crystal in nature, all the electrons do move in a lattice and satisfy the Dirac equation; yet there is not a single physical result that has ever been entangled with a spurious fermion solution. Therefore it should not be difficult to eliminate these unphysical elements. On a discrete lattice, particle hop from point to point, whereas in a real crystal the lattice structure in embedded in a continuum and electrons move continuously from lattice cell to lattice cell. In a discrete system, the lattice functions are defined only on individual points (or links as in the case of gauge fields). However, in a crystal the electron state vector is represented by the Bloch wave functions which are continuous functions in {rvec {gamma}}, and herein lies one of the essential differences.

Lattice fermions

Energy Technology Data Exchange (ETDEWEB)

Randjbar-Daemi, S

1995-12-01

The so-called doubling problem in the lattice description of fermions led to a proof that under certain circumstances chiral gauge theories cannot be defined on the lattice. This is called the no-go theorem. It implies that if {Gamma}/sub/A is defined on a lattice then its infrared limit, which should correspond to the quantum description of the classical action for the slowly varying fields on lattice scale, is inevitably a vector like theory. In particular, if not circumvented, the no-go theorem implies that there is no lattice formulation of the Standard Weinberg-Salam theory or SU(5) GUT, even though the fermions belong to anomaly-free representations of the gauge group. This talk aims to explain one possible attempt at bypassing the no-go theorem. 20 refs.

Lattice fermions

International Nuclear Information System (INIS)

Randjbar-Daemi, S.

1995-12-01

The so-called doubling problem in the lattice description of fermions led to a proof that under certain circumstances chiral gauge theories cannot be defined on the lattice. This is called the no-go theorem. It implies that if Γ/sub/A is defined on a lattice then its infrared limit, which should correspond to the quantum description of the classical action for the slowly varying fields on lattice scale, is inevitably a vector like theory. In particular, if not circumvented, the no-go theorem implies that there is no lattice formulation of the Standard Weinberg-Salam theory or SU(5) GUT, even though the fermions belong to anomaly-free representations of the gauge group. This talk aims to explain one possible attempt at bypassing the no-go theorem. 20 refs

Hydrothermal Growth and Photoluminescence of Znl-xMgxO Alloy Crystals

National Research Council Canada - National Science Library

Callahan, Michael; Bouthillette, Lionel; Wang, Buguo

2006-01-01

Znl-xMgxO alloy formation via band gap engineering is important in the development of blue-UV optoelectronic devices by providing lattice-matched transparent substrates for ZnO and nitride-related devices...

Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

Energy Technology Data Exchange (ETDEWEB)

Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2017-05-15

Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

Science.gov (United States)

Lukosius, M; Dabrowski, J; Kitzmann, J; Fursenko, O; Akhtar, F; Lisker, M; Lippert, G; Schulze, S; Yamamoto, Y; Schubert, M A; Krause, H M; Wolff, A; Mai, A; Schroeder, T; Lupina, G

2016-12-14

Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible, 200 mm graphene was obtained on Ge(001)/Si(001) wafers in this work. Chemical vapor depositions were carried out at the deposition temperatures of 885 °C using CH 4 as carbon source on epitaxial Ge(100) layers, which were grown on Si(100), prior to the graphene synthesis. Graphene layer with the 2D/G ratio ∼3 and low D mode (i.e., low concentration of defects) was measured over the entire 200 mm wafer by Raman spectroscopy. A typical full-width-at-half-maximum value of 39 cm -1 was extracted for the 2D mode, further indicating that graphene of good structural quality was produced. The study also revealed that the lack of interfacial oxide correlates with superior properties of graphene. In order to evaluate electrical properties of graphene, its 2 × 2 cm 2 pieces were transferred onto SiO 2 /Si substrates from Ge/Si wafers. The extracted sheet resistance and mobility values of transferred graphene layers were ∼1500 ± 100 Ω/sq and μ ≈ 400 ± 20 cm 2 /V s, respectively. The transferred graphene was free of metallic contaminations or mechanical damage. On the basis of results of DFT calculations, we attribute the high structural quality of graphene grown by CVD on Ge to hydrogen-induced reduction of nucleation probability, explain the appearance of graphene-induced facets on Ge(001) as a kinetic effect caused by surface step pinning at linear graphene nuclei, and clarify the orientation of graphene domains on Ge(001) as resulting from good lattice matching between Ge(001) and graphene nucleated on such nuclei.

The Crystal structure of InAs nanorods grown onto Si[111] substrate

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2011-07-01

Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

Recursive evaluation of space-time lattice Green's functions

International Nuclear Information System (INIS)

De Hon, Bastiaan P; Arnold, John M

2012-01-01

Up to a multiplicative constant, the lattice Green's function (LGF) as defined in condensed matter physics and lattice statistical mechanics is equivalent to the Z-domain counterpart of the finite-difference time-domain Green's function (GF) on a lattice. Expansion of a well-known integral representation for the LGF on a ν-dimensional hyper-cubic lattice in powers of Z −1 and application of the Chu–Vandermonde identity results in ν − 1 nested finite-sum representations for discrete space-time GFs. Due to severe numerical cancellations, these nested finite sums are of little practical use. For ν = 2, the finite sum may be evaluated in closed form in terms of a generalized hypergeometric function. For special lattice points, that representation simplifies considerably, while on the other hand the finite-difference stencil may be used to derive single-lattice-point second-order recurrence schemes for generating 2D discrete space-time GF time sequences on the fly. For arbitrary symbolic lattice points, Zeilberger's algorithm produces a third-order recurrence operator with polynomial coefficients of the sixth degree. The corresponding recurrence scheme constitutes the most efficient numerical method for the majority of lattice points, in spite of the fact that for explicit numeric lattice points the associated third-order recurrence operator is not the minimum recurrence operator. As regards the asymptotic bounds for the possible solutions to the recurrence scheme, Perron's theorem precludes factorial or exponential growth. Along horizontal lattices directions, rapid initial growth does occur, but poses no problems in augmented dynamic-range fixed precision arithmetic. By analysing long-distance wave propagation along a horizontal lattice direction, we have concluded that the chirp-up oscillations of the discrete space-time GF are the root cause of grid dispersion anisotropy. With each factor of ten increase in the lattice distance, one would have to roughly

Form factors in the B{sub s}→lν decays using HQET and the lattice

Energy Technology Data Exchange (ETDEWEB)

Banerjee, Debasish [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Collaboration: ALPHA Collaboration

2017-01-17

We report on a recent computation of the form factors in semi-leptonic decays of the B{sub s} using Heavy Quark Effective Theory (HQET) formalism applied on the lattice. The connection of the form factors with the 2-point and 3-point correlators on the lattice is explained, and the subsequent non-perturbative renormalization of HQET and it's matching to N{sub f}=2 QCD is outlined. The results of the (static) leading-order calculation in the continuum limit is presented.

How metal films de-wet substrates-identifying the kinetic pathways and energetic driving forces

International Nuclear Information System (INIS)

McCarty, Kevin F; Hamilton, John C; Thuermer, Konrad; Jones, Frank; Talin, A Alec; Bartelt, Norman C; Sato, Yu; K Schmid, Andreas; Saa, Angela; Figuera, Juan de la; Stumpf, Roland

2009-01-01

We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation.

Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

International Nuclear Information System (INIS)

Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

2006-01-01

The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

Synthesis of Vertically Aligned ZnO Nano rods on Various Substrates

International Nuclear Information System (INIS)

Hassan, J.J.; Hassan, Z.; Abu Hassan, H.; Mahdi, M.A.

2011-01-01

We successfully synthesized vertically aligned ZnO nano rods on Si, GaN, Sic, Al 2 O 3 , ITO, and quartz substrates using microwave assisted chemical bath deposition (MA-CBD) method. All these types of substrates were seeded with PVA-ZnO nano composites layer prior to the nano rods growth. The effect of substrate type on the morphology of the ZnO nano rods was studied. The diameter of grown ZnO nano rods ranged from 50 nm to 200 nm. Structural quality and morphology of ZnO nano rods were determined by x-ray diffraction and scanning electron microscopy, which revealed hexagonal wurtzite structures perpendicular to the substrate along the z-axis in the direction of (002). Photoluminescence measurements of grown ZnO nano rods on all substrates exhibited high UV peak intensity. Raman scattering studies were conducted to estimate the lattice vibration modes. (author)

Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

Energy Technology Data Exchange (ETDEWEB)

Venkat Selvamanickam; Alex Freundlich

2010-11-29

III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

Effect of substrate roughness and working pressure on photocatalyst of N-doped TiOx films prepared by reactive sputtering with air

International Nuclear Information System (INIS)

Lee, Seon-Hong; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

2015-01-01

Highlights: • Effect of substrate roughness and working pressure on the physical properties and the photocatalytic properties of the N-doped TiO x films are investigated. • Surface roughness of glass substrate has little influence on the film properties, but significant influence on the photocatalytic ability. • Working pressure has little influence on the produced phases and the atomic bonding configurations, but significant influence on the atomic concentration of the N-doped TiO x film. • High photocatalysis of N-doped TiO x film requires the permissible range of the N doping concentration which shows the interstitial complex N doping states in TiO 2 . - Abstract: N-doped TiO x films on the glass substrate were prepared by radio-frequency (RF) magnetron reactive sputtering of Ti target in a mixed gas of argon and dry air. The effect of substrate roughness and working pressure on the physical properties and the photocatalytic properties of the N-doped TiO x films was investigated. The surface roughness of glass substrate has little influence on the film properties such as produced phases, lattice parameters, introduced nitrogen contents, and atomic bonding configurations, but significant influence on the surface roughness of film resulting in the variation of the photocatalytic ability. The working pressure has little influence on the produced phases and the atomic bonding configurations, but significant influence on the atomic concentration of the N-doped TiO x film, resulting in the large variation of optical, structural, and photocatalytic properties. It is suggested that the high photocatalysis of N-doped TiO x film requires a certain range of the N doping concentration which shows the interstitial complex N doping states in TiO 2

Preparing a highly degenerate Fermi gas in an optical lattice

International Nuclear Information System (INIS)

Williams, J. R.; Huckans, J. H.; Stites, R. W.; Hazlett, E. L.; O'Hara, K. M.

2010-01-01

We propose a method to prepare fermionic atoms in a three-dimensional optical lattice at unprecedentedly low temperatures and uniform filling factors. The process involves adiabatic loading of degenerate atoms into multiple energy bands of an optical lattice followed by a filtering stage whereby atoms from all but the lowest band are removed. Of critical importance is the use of a nonharmonic trapping potential to provide external confinement for the atoms. For realistic experimental parameters, this procedure will produce a Fermi gas in a lattice with a reduced temperature T/T F ∼0.003 and an entropy per particle of s∼0.02 k B .

Thin-film X-ray filters on microstructured substrates and their thermophysical properties

Science.gov (United States)

Mitrofanov, A. V.

2018-02-01

It is shown that structured substrates having micron- or submicron-sized through holes and coated with an ultrathin organic film can be used for the fabrication of thin-film X-ray filters via direct growth of functional layers on a substrate by sputter deposition, without additional complex processing steps. An optimised process is considered for the fabrication of X-ray filters on support structures in the form of electroplated fine nickel grids and on track-etched polymer membranes with micron- and submicrondiameter through pores. 'Optimisation' is here taken to mean matching the sputter deposition conditions with the properties of substrates so as to avoid overheating. The filters in question are intended for both imaging and single-channel detectors operating in the soft X-ray and vacuum UV spectral regions, at wavelengths from 10 to 60 nm. Thermal calculations are presented for the heating of ultrathin layers of organic films and thin-film support substrates during the sputter deposition of aluminium or other functional materials. The paper discusses approaches for cooling thinfilm composites during the sputter deposition process and the service of the filters in experiments and gives a brief overview of the works that utilised filters produced by the described technique on microstructured substrates, including orbital solar X-ray research in the framework of the CORONAS programme and laboratory laser plasma experiments.

Lattice gauge theory

International Nuclear Information System (INIS)

Mack, G.

1982-01-01

After a description of a pure Yang-Mills theory on a lattice, the author considers a three-dimensional pure U(1) lattice gauge theory. Thereafter he discusses the exact relation between lattice gauge theories with the gauge groups SU(2) and SO(3). Finally he presents Monte Carlo data on phase transitions in SU(2) and SO(3) lattice gauge models. (HSI)

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

International Nuclear Information System (INIS)

Bashkirov, S.A.; Gremenok, V.F.; Ivanov, V.A.; Shevtsova, V.V.; Gladyshev, P.P.

2015-01-01

Tin monosulfide SnS raises an interest as a promising material for photovoltaics. The influence of the substrate material on the microstructure and optical properties of SnS thin films with [111] texture obtained by hot wall vacuum deposition on glass, molybdenum and indium tin oxide substrates is reported. The lattice parameters for layers grown on different substrates were determined by X-ray diffraction and their deviations from the data reported in the literature for single α-SnS crystals were discussed. The change in the degree of preferred orientation of the films depending on the substrate material is observed. The direct nature of the optical transitions with the optical band gap of 1.15 ± 0.01 eV is reported. - Highlights: • SnS thin films were hot wall deposited on glass, molybdenum and indium tin oxide. • Physical properties of the films were studied with respect to the substrate type. • The SnS lattice parameter deviations were observed and the explanation was given. • The direct optical transitions with the band gap of 1.15 ± 0.01 eV were observed

The behavior of lattice defects produced in Al{sub 2}O{sub 3} irradiated by neutrons at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Atobe, K.; Koizumi, T. [Naruto Univ. of Education, Tokushima (Japan); Okada, M. [Kyoto Univ., Research Reactor Inst., Kumatori, Osaka (Japan)

2003-01-01

Single crystals of {alpha}-Al{sub 2}O{sub 3} were irradiated by the two reactors, KUR and JMTR, at three different temperatures. Lattice defects produced by irradiation were studied by esr (electron spin resonance). Three kinds of esr spectram, which are denoted as A, B and C spectram, are observed. The spectram A was observed at three different irradiation temperatures and was ascribed to oxygen vacancies. The spectram B showed no angular dependence for the rotation of external magnetic field to the crystal axis, and the defect density of this spectram decreased with an increase of annealing temperature. When the specimen was annealed at 400 degC after irradiation at 200 degC, the spectram C was observed and was presumed to be due to Al-colloids. (Y. Kazumata)

Stability of matter-wave solitons in optical lattices

Science.gov (United States)

Ali, Sk. Golam; Roy, S. K.; Talukdar, B.

2010-08-01

We consider localized states of both single- and two-component Bose-Einstein condensates (BECs) confined in a potential resulting from the superposition of linear and nonlinear optical lattices and make use of Vakhitov-Kolokolov criterion to investigate the effect of nonlinear lattice on the stability of the soliton solutions in the linear optical lattice (LOL). For the single-component case we show that a weak nonlinear lattice has very little effect on the stability of such solitons while sufficiently strong nonlinear optical lattice (NOL) squeezes them to produce narrow bound states. For two-component condensates we find that when the strength of the NOL (γ1) is less than that of the LOL (V0) a relatively weak intra-atomic interaction (IAI) has little effect on the stability of the component solitons. This is true for both attractive and repulsive IAI. A strong attractive IAI, however, squeezes the BEC solitons while a similar repulsive IAI makes the component solitons wider. For γ1 > V0, only a strong attractive IAI squeezes the BEC solitons but the squeezing effect is less prominent than that found for γ1 < V0. We make useful checks on the results of our semianalytical stability analysis by solving the appropriate Gross-Pitaevskii equations numerically.

Graphene antidot lattice transport measurements

DEFF Research Database (Denmark)

Mackenzie, David; Cagliani, Alberto; Gammelgaard, Lene

2017-01-01

We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical...... for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices...... in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of ∼100 cm2/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (

Geometrical study of phyllotactic patterns by Bernoulli spiral lattices.

Science.gov (United States)

Sushida, Takamichi; Yamagishi, Yoshikazu

2017-06-01

Geometrical studies of phyllotactic patterns deal with the centric or cylindrical models produced by ideal lattices. van Iterson (Mathematische und mikroskopisch - anatomische Studien über Blattstellungen nebst Betrachtungen über den Schalenbau der Miliolinen, Verlag von Gustav Fischer, Jena, 1907) suggested a centric model representing ideal phyllotactic patterns as disk packings of Bernoulli spiral lattices and presented a phase diagram now called Van Iterson's diagram explaining the bifurcation processes of their combinatorial structures. Geometrical properties on disk packings were shown by Rothen & Koch (J. Phys France, 50(13), 1603-1621, 1989). In contrast, as another centric model, we organized a mathematical framework of Voronoi tilings of Bernoulli spiral lattices and showed mathematically that the phase diagram of a Voronoi tiling is graph-theoretically dual to Van Iterson's diagram. This paper gives a review of two centric models for disk packings and Voronoi tilings of Bernoulli spiral lattices. © 2017 Japanese Society of Developmental Biologists.

Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

International Nuclear Information System (INIS)

Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

2009-01-01

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

International Nuclear Information System (INIS)

Guillén, C; Herrero, J

2008-01-01

Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

2014-01-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

First multi-bend achromat lattice consideration

Energy Technology Data Exchange (ETDEWEB)

Einfeld, Dieter, E-mail: dieter.einfeld@maxlab.lu.se [Lund University, PO Box 118, Lund SE-221 00 (Sweden); Plesko, Mark [COSYLAB, Teslova ulica 30, Ljubljana SI-1000 (Slovakia); Schaper, Joachim [HAWK University of Applied Sciences and Arts, Hohnsen 4, D-31134 Hildesheim (Germany)

2014-08-27

The first proposed lattice for a ‘diffraction-limited light source’ is reported. This approach has now more or less been used for the MAX IV project. By the beginning of 1990, three third-generation synchrotron light sources had been successfully commissioned in Grenoble, Berkeley and Trieste (ESRF, ALS and ELETTRA). Each of these new machines reached their target specifications without any significant problems. In parallel, already at that time discussions were underway regarding the next generation, the ‘diffraction-limited light source (DLSR)’, which featured sub-nm rad electron beam emittance, photon beam brilliance exceeding 10{sup 22} and the potential to emit coherent radiation. Also, at about that time, a first design for a 3 GeV DLSR was developed, based on a modified multiple-bend achromat (MBA) design leading to a lattice with normalized emittance of ∊{sub x} = 0.5 nm rad. The novel feature of the MBA lattice was the use of seven vertically focusing bend magnets with different bending angles throughout the achromat cell to keep the radiation integrals and resulting beam emittance low. The baseline design called for a 400 m ring circumference with 12 straight sections of 6 m length. The dynamic aperture behaviour of the DLSR lattice was estimated to produce > 5 h beam lifetime at 100 mA stored beam current.

A photoemission study of evaporated manganese on gallium arsenide at elevated temperatures

International Nuclear Information System (INIS)

James, D.; Tadich, A.; Riley, J.; Leckey, R.; Emtsev, K.; Seyller, T.; Ley, L.

2004-01-01

Full text: The interaction between metals and semiconductors has been extensively researched to achieve an understanding of the formation of Schottky barriers and conditions for low resistance electrical connections to devices. The possibility of the use of magnetic materials to generate spin polarised currents, so called spintronics, and has extended this interest to metals that have not traditionally been used for such contacts. Manganese has recently been used as one element in GaAs and ZnSe based devices so its interaction with such surfaces is of interest. An interest that motivates this study is the possibility of lattice-matched growth of transition metal layers on semiconductors. Lattice mismatch initially appeared to inhibit single crystal transition metal growth, but it has been reported that lattice matched growth can occur in some cases. It is thought that reactions at the interface form a buffer layer, which allows for epitaxial growth via a more comparable lattice constant. We report studies of the growth of manganese films on GaAs(100) at several substrate temperatures using angle resolved photoemission, the diffusion of the Mn in the GaAs substrates using SIMS and the morphology of the layers using AFM images

Study on distributed generation algorithm of variable precision concept lattice based on ontology heterogeneous database

Science.gov (United States)

WANG, Qingrong; ZHU, Changfeng

2017-06-01

Integration of distributed heterogeneous data sources is the key issues under the big data applications. In this paper the strategy of variable precision is introduced to the concept lattice, and the one-to-one mapping mode of variable precision concept lattice and ontology concept lattice is constructed to produce the local ontology by constructing the variable precision concept lattice for each subsystem, and the distributed generation algorithm of variable precision concept lattice based on ontology heterogeneous database is proposed to draw support from the special relationship between concept lattice and ontology construction. Finally, based on the standard of main concept lattice of the existing heterogeneous database generated, a case study has been carried out in order to testify the feasibility and validity of this algorithm, and the differences between the main concept lattice and the standard concept lattice are compared. Analysis results show that this algorithm above-mentioned can automatically process the construction process of distributed concept lattice under the heterogeneous data sources.

Area of Lattice Polygons

Science.gov (United States)

Scott, Paul

2006-01-01

A lattice is a (rectangular) grid of points, usually pictured as occurring at the intersections of two orthogonal sets of parallel, equally spaced lines. Polygons that have lattice points as vertices are called lattice polygons. It is clear that lattice polygons come in various shapes and sizes. A very small lattice triangle may cover just 3…

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

Science.gov (United States)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

High resolution microstructure characterization of the interface between cold sprayed Al coating and Mg alloy substrate

International Nuclear Information System (INIS)

Wang, Qiang; Qiu, Dong; Xiong, Yuming; Birbilis, Nick; Zhang, Ming-Xing

2014-01-01

High-resolution transmission electron microscopy (HR-TEM) has validated the intimate metallurgical (atomic) bond formed along the interface of a cold-sprayed Al coating upon an Mg-alloy (AZ91) substrate. The compressive impact led to the formation of nanostructured layers of about 300–500 nm into the substrate. A highly distorted lattice structure with the inclusion of small amorphous zones was observed at the periphery of the particle/substrate interface, as a result of adiabatic shear plastic deformation at a high strain rate.

Additive-manufactured sandwich lattice structures: A numerical and experimental investigation

Science.gov (United States)

Fergani, Omar; Tronvoll, Sigmund; Brøtan, Vegard; Welo, Torgeir; Sørby, Knut

2017-10-01

The utilization of additive-manufactured lattice structures in engineered products is becoming more and more common as the competitiveness of AM as a production technology has increased during the past several years. Lattice structures may enable important weight reductions as well as open opportunities to build products with customized functional properties, thanks to the flexibility of AM for producing complex geometrical configurations. One of the most critical aspects related to taking AM into new application areas—such as safety critical products—is currently the limited understanding of the mechanical behavior of sandwich-based lattice structure mechanical under static and dynamic loading. In this study, we evaluate manufacturability of lattice structures and the impact of AM processing parameters on the structural behavior of this type of sandwich structures. For this purpose, we conducted static compression testing for a variety of geometry and manufacturing parameters. Further, the study discusses a numerical model capable of predicting the behavior of different lattice structure. A reasonably good correlation between the experimental and numerical results was observed.

Initial Mechanical Testing of Superalloy Lattice Block Structures Conducted

Science.gov (United States)

Krause, David L.; Whittenberger, J. Daniel

2002-01-01

The first mechanical tests of superalloy lattice block structures produced promising results for this exciting new lightweight material system. The testing was performed in-house at NASA Glenn Research Center's Structural Benchmark Test Facility, where small subelement-sized compression and beam specimens were loaded to observe elastic and plastic behavior, component strength levels, and fatigue resistance for hundreds of thousands of load cycles. Current lattice block construction produces a flat panel composed of thin ligaments arranged in a three-dimensional triangulated trusslike structure. Investment casting of lattice block panels has been developed and greatly expands opportunities for using this unique architecture in today's high-performance structures. In addition, advances made in NASA's Ultra-Efficient Engine Technology Program have extended the lattice block concept to superalloy materials. After a series of casting iterations, the nickel-based superalloy Inconel 718 (IN 718, Inco Alloys International, Inc., Huntington, WV) was successfully cast into lattice block panels; this combination offers light weight combined with high strength, high stiffness, and elevated-temperature durability. For tests to evaluate casting quality and configuration merit, small structural compression and bend test specimens were machined from the 5- by 12- by 0.5-in. panels. Linear elastic finite element analyses were completed for several specimen layouts to predict material stresses and deflections under proposed test conditions. The structural specimens were then subjected to room-temperature static and cyclic loads in Glenn's Life Prediction Branch's material test machine. Surprisingly, the test results exceeded analytical predictions: plastic strains greater than 5 percent were obtained, and fatigue lives did not depreciate relative to the base material. These assets were due to the formation of plastic hinges and the redundancies inherent in lattice block construction

Domain matching epitaxy of cubic In{sub 2}O{sub 3} on r-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Vogt, Patrick; Trampert, Achim; Ramsteiner, Manfred; Bierwagen, Oliver [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117, Berlin (Germany)

2015-07-15

Undoped, Sn-doped, and Mg-doped In{sub 2}O{sub 3} layers were grown on rhombohedral r-plane sapphire (α-Al{sub 2}O{sub 3} (10.2)) by plasma-assisted molecular beam epitaxy. X-ray diffraction and Raman scattering experiments demonstrated the formation of phase-pure, cubic (110)-oriented In{sub 2}O{sub 3} for Sn- and Mg-concentrations up to 2 x 10{sup 20} and 6 x 10{sup 20} cm{sup -3}, respectively. Scanning electron microscopy images showed facetted domains without any surface-parallel (110) facets. High Mg- or Sn-doping influenced surface morphology and the facet formation. X-ray diffraction Φ-scans indicated the formation of two rotational domains separated by an angle Φ = 86.6 due to the substrate mirror-symmetry around the in-plane-projected Al{sub 2}O{sub 3} c-axis. The in-plane epitaxial relationships to the substrate were determined for both domains. For the first domain it is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 3 anti 4]. For the second domain the inplane epitaxial relation is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 34]. A low-mismatch coincidence lattice of indium atoms from the film and oxygen atoms from the substrate rationalizes this epitaxial relation by domain-matched epitaxy. Cross-sectional transmission-electron microscopy showed a columnar domain-structure, indicating the vertical growth of the rotational domains after their nucleation. Coincidence structure of In{sub 2}O{sub 3} (110) (In atoms in red) grown on Al{sub 2}O{sub 3} (10.2) (O atoms in blue) showing two rotational domians. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication and Mechanical Characterisation of Titanium Lattices with Graded Porosity

Directory of Open Access Journals (Sweden)

William van Grunsven

2014-08-01

Full Text Available Electron Beam Melting (EBM is an Additive Manufacturing technique which can be used to fabricate complex structures from alloys such as Ti6Al4V, for example for orthopaedic applications. Here we describe the use of EBM for the fabrication of a novel Ti6Al4V structure of a regular diamond lattice incorporating graded porosity, achieved via changes in the strut cross section thickness. Scanning Electron Microscopy and micro computed tomography analysis confirmed that generally EBM reproduced the CAD design of the lattice well, although at smaller strut sizes the fabricated lattice produced thicker struts than the model. Mechanical characterisation of the lattice in uniaxial compression showed that its behaviour under compression along the direction of gradation can be predicted to good accuracy with a simple rule of mixtures approach, knowing the properties and the behaviour of its constituent layers.

Lattice dynamics of γ--Ce

International Nuclear Information System (INIS)

Gould, T.A.

1978-08-01

The phonon and magnetic measurements described in the thesis produced the following significant results concerning the lattice dynamical and magnetic properties of γ-Ce. The phonon spectrum is relatively soft, which is consistent with results obtained for CeSn 3 . The L [110] and T [111] branches of the dispersion curve are anomalous. The C 11 and C 44 elastic constants are quite close in value. No discrete magnetic excitations were observed. The magnetic scattering is qualitatively similar to the results from Ce 0 . 74 Th 0 . 26 , however, GAMMA/sub Ce/ less than GAMMA/sub Ce-Th/. The various lattice dynamical and magnetic similarities among γ-Ce, CeSn 3 , and Ce 0 . 74 Th 0 . 26 are mixed valence compounds. Therefore, a complete theoretical description of the observed properties of Ce and its compounds may provide a basis for understanding a whole class of mixed valence materials

Optimizing substrate for sulfate-reducing bacteria

International Nuclear Information System (INIS)

Chang, L.K.; Updegraff, D.M.; Wildeman, T.R.

1991-01-01

Microbial sulfate reduction followed by sulfide precipitation effectively removes heavy metals from wastewaters. The substrate in the anaerobic zone in a constructed wetland can be designed to emphasize this removal process. This group of bacteria requires CH 2 O, P, N, and SO 4 =, reducing conditions, and pH range of 5-9 (pH=7 is optimum). The objective of this study was to find an inexpensive source of nutrients that would give the best initial production of sulfide and make a good wetland substrate. All tested materials contain sufficient P and N; mine drainage provides sulfate. Thus, tests focused on finding organic material that provides the proper nutrients and does not cause the culture to fall below pH of 5. Among chemical nutrients, sodium lactate combined with (NH 4 ) 2 HPO 4 were the only compounds that produced sulfide after 11 days. Among complex nutrients, only cow manure produced sulfide after 26 days. Among complex carbohydrates, cracked corn and raw rice produced sulfide after 10 days. Most substrates failed to produce sulfide because anaerobic fermentation reduced the pH below 5. Presently, cracked corn is the best candidate for a substrate. Five grams of cow manure produced 0.14 millimole of sulfide whereas 0.1 g of cracked corn produced 0.22 millimole

On the idea of low-energy nuclear reactions in metallic lattices by producing neutrons from protons capturing "heavy" electrons

Science.gov (United States)

Tennfors, Einar

2013-02-01

The present article is a critical comment on Widom and Larsens speculations concerning low-energy nuclear reactions (LENR) based on spontaneous collective motion of protons in a room temperature metallic hydride lattice producing oscillating electric fields that renormalize the electron self-energy, adding significantly to the effective electron mass and enabling production of low-energy neutrons. The frequency and mean proton displacement estimated on the basis of neutron scattering from protons in palladium and applied to the Widom and Larsens model of the proton oscillations yield an electron mass enhancement less than one percent, far below the threshold for the proposed neutron production and even farther below the mass enhancement obtained by Widom and Larsen assuming a high charge density. Neutrons are not stopped by the Coulomb barrier, but the energy required for the neutron production is not low.

New integrable lattice hierarchies

International Nuclear Information System (INIS)

Pickering, Andrew; Zhu Zuonong

2006-01-01

In this Letter we give a new integrable four-field lattice hierarchy, associated to a new discrete spectral problem. We obtain our hierarchy as the compatibility condition of this spectral problem and an associated equation, constructed herein, for the time-evolution of eigenfunctions. We consider reductions of our hierarchy, which also of course admit discrete zero curvature representations, in detail. We find that our hierarchy includes many well-known integrable hierarchies as special cases, including the Toda lattice hierarchy, the modified Toda lattice hierarchy, the relativistic Toda lattice hierarchy, and the Volterra lattice hierarchy. We also obtain here a new integrable two-field lattice hierarchy, to which we give the name of Suris lattice hierarchy, since the first equation of this hierarchy has previously been given by Suris. The Hamiltonian structure of the Suris lattice hierarchy is obtained by means of a trace identity formula

A blind matching algorithm for cognitive radio networks

KAUST Repository

Hamza, Doha R.; Shamma, Jeff S.

2016-01-01

that will be used to relay PU data. We formulate the problem as a generalized assignment market to find an epsilon pairwise stable matching. We propose a distributed blind matching algorithm (BLMA) to produce the pairwise-stable matching plus the associated power

Assessment of Automotive Coatings Used on Different Metallic Substrates

Directory of Open Access Journals (Sweden)

W. Bensalah

2014-01-01

Full Text Available Four epoxy primers commonly used in the automotive industry were applied by gravity pneumatic spray gun over metallic substrates, specifically, steel, electrogalvanized steel, hot-dip galvanized steel, and aluminum. A two-component polyurethane resin was used as topcoat. To evaluate the performance of the different coating systems, the treated panels were submitted to mechanical testing using Persoz hardness, impact resistance, cupping, lattice method, and bending. Tribological properties of different coating systems were conducted using pin on disc machine. Immersion tests were carried out in 5% NaCl and immersion tests in 3% NaOH solutions. Results showed which of the coating systems is more suitable for each substrate in terms of mechanical, tribological, and anticorrosive performance.

Matching Two-dimensional Gel Electrophoresis' Spots

DEFF Research Database (Denmark)

Dos Anjos, António; AL-Tam, Faroq; Shahbazkia, Hamid Reza

2012-01-01

This paper describes an approach for matching Two-Dimensional Electrophoresis (2-DE) gels' spots, involving the use of image registration. The number of false positive matches produced by the proposed approach is small, when compared to academic and commercial state-of-the-art approaches. This ar...

Lattice gauge theories

International Nuclear Information System (INIS)

Creutz, M.

1983-04-01

In the last few years lattice gauge theory has become the primary tool for the study of nonperturbative phenomena in gauge theories. The lattice serves as an ultraviolet cutoff, rendering the theory well defined and amenable to numerical and analytical work. Of course, as with any cutoff, at the end of a calculation one must consider the limit of vanishing lattice spacing in order to draw conclusions on the physical continuum limit theory. The lattice has the advantage over other regulators that it is not tied to the Feynman expansion. This opens the possibility of other approximation schemes than conventional perturbation theory. Thus Wilson used a high temperature expansion to demonstrate confinement in the strong coupling limit. Monte Carlo simulations have dominated the research in lattice gauge theory for the last four years, giving first principle calculations of nonperturbative parameters characterizing the continuum limit. Some of the recent results with lattice calculations are reviewed

The lattice thermal conductivity of pure metals: Aluminium and Indium, ch. 4

International Nuclear Information System (INIS)

Lang, H.N. de

1977-01-01

The lattice conductivity of aluminium and indium has been determined by reducing the electronic thermal conductivity by means of a magnetic field. This was done using the Corbino configuration which prevents the thermal Hall field from forming, hence produces the largest magnetoresistance for a given field strength. In this way for the first time the lattice conductivity of Al and In was measured by the magnetic field method. Apart from a discussion of these results, a comprehensive and critical examination is given of the different methods to determine the lattice conductivity of metals, the phenomenon of the linear magnetoresistance, the quadratic field dependence of the MR and the anomalous lattice conductivity of Potassium as well as the phenomenon of curve crossing

Generalized Phase Contrast with matched filtering using LCoS pico-projectors

OpenAIRE

Bañas, Andrew Rafael; Palima, Darwin; Glückstad, Jesper

2012-01-01

We report a beam shaping system for generating high intensity programmable opticalspots using mGPC: matched filtering combined with Generalized Phase Contrastapplying two consumer handheld pico-projectors. Such a system presents a low costalternative for optical trapping and manipulation, optical lattices and other beamshaping applications usually implemented with high-end spatial light modulators.Portable pico-projectors based on liquid crystal on silicon (LCoS) devices were usedas binary ph...

Sweet sorghum bagasse and corn stover serving as substrates for producing sophorolipids

Energy Technology Data Exchange (ETDEWEB)

Samad, Abdul; Zhang, Ji; Chen, Da; Chen, Xiaowen; Tucker, Melvin; Liang, Yanna

2016-12-28

To make the process of producing sophorolipids by Candida bombicola truly sustainable, we investigated production of these biosurfactants on biomass hydrolysates. This study revealed: (1) yield of sophorolipds on bagasse hydrolysate decreased from 0.56 to 0.54 and to 0.37 g/g carbon source when yellow grease was dosed at 10, 40 and 60 g/L, respectively. In the same order, concentration of sophorolipids was 35.9, 41.9, and 39.3 g/L; (2) under similar conditions, sophorolipid yield was 0.12, 0.05 and 0.04 g/g carbon source when corn stover hydrolysate was mixed with soybean oil at 10, 20 and 40 g/L. Sophorolipid concentration was 11.6, 4.9, and 3.9 g/L for the three oil doses from low to high; and (3) when corn stover hydrolysate and yellow grease served as the substrates for cultivating the yeast in a fermentor, sophorolipid concentration reached 52.1 g/L. Upon further optimization, sophorolipids production from ligocellulose will be indeed sustainable.

Convection-diffusion lattice Boltzmann scheme for irregular lattices

NARCIS (Netherlands)

Sman, van der R.G.M.; Ernst, M.H.

2000-01-01

In this paper, a lattice Boltzmann (LB) scheme for convection diffusion on irregular lattices is presented, which is free of any interpolation or coarse graining step. The scheme is derived using the axioma that the velocity moments of the equilibrium distribution equal those of the

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

International Nuclear Information System (INIS)

Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

2015-01-01

FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

Electron beam irradiating process for rendering rough or topographically irregular surface substrates smooth; and coated substrates produced thereby

International Nuclear Information System (INIS)

Nablo, S.V.

1979-01-01

This disclosure involves a novel process for instantaneous electron-beam curing of very thin low viscosity, solventless coating upon rough, irregular or textured surfaces of a substrate such as paper or the like. Through rather critical timing and energy adjustment procedures, the coating firmly adheres to the surface before the coating can conform to the roughness or texture contour or substantially penetrate into the surface. By this method a solidified very smooth outer surface is provided for the substrate that is particularly used for metalization and other finished layerings. (author)

Lattices with unique complements

CERN Document Server

Saliĭ, V N

1988-01-01

The class of uniquely complemented lattices properly contains all Boolean lattices. However, no explicit example of a non-Boolean lattice of this class has been found. In addition, the question of whether this class contains any complete non-Boolean lattices remains unanswered. This book focuses on these classical problems of lattice theory and the various attempts to solve them. Requiring no specialized knowledge, the book is directed at researchers and students interested in general algebra and mathematical logic.

Lattice location of impurities in silicon Carbide

CERN Document Server

AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

The Lattice-Valued Turing Machines and the Lattice-Valued Type 0 Grammars

Directory of Open Access Journals (Sweden)

Juan Tang

2014-01-01

Full Text Available Purpose. The purpose of this paper is to study a class of the natural languages called the lattice-valued phrase structure languages, which can be generated by the lattice-valued type 0 grammars and recognized by the lattice-valued Turing machines. Design/Methodology/Approach. From the characteristic of natural language, this paper puts forward a new concept of the l-valued Turing machine. It can be used to characterize recognition, natural language processing, and dynamic characteristics. Findings. The mechanisms of both the generation of grammars for the lattice-valued type 0 grammar and the dynamic transformation of the lattice-valued Turing machines were given. Originality/Value. This paper gives a new approach to study a class of natural languages by using lattice-valued logic theory.

Manipulating molecule-substrate exchange interactions via graphene

Science.gov (United States)

Bhandary, Sumanta; Eriksson, Olle; Sanyal, Biplab

2013-03-01

Organometallic molecules with a 3d metal center carrying a spin offers many interesting properties, e.g., existence of multiple spin states. A recent interest has been in understanding the magnetic exchange interaction between these organometallic molecules and magnetic substrates both from experiments and theory. In this work, we will show by calculations based on density functional theory how the exchange interaction is mediated via graphene in a geometry containing iron porphyrin(FeP)/graphene/Ni(111). The exchange interaction varies from a ferromagnetic to an antiferromagnetic one depending on the lattice site and type of defect in the graphene lattice along with the switching of spin state of Fe in FeP between S=1 and S=2, which should be detectable by x-ray magnetic circular dichroism experiments. This scenario of complex magnetic couplings with large magnetic moments may offer a unique spintronic logic device. We acknowledge financial support from the Swedish Research Council, KAW foundation and the ERC(project 247062 - ASD).

Additive lattice kirigami.

Science.gov (United States)

Castle, Toen; Sussman, Daniel M; Tanis, Michael; Kamien, Randall D

2016-09-01

Kirigami uses bending, folding, cutting, and pasting to create complex three-dimensional (3D) structures from a flat sheet. In the case of lattice kirigami, this cutting and rejoining introduces defects into an underlying 2D lattice in the form of points of nonzero Gaussian curvature. A set of simple rules was previously used to generate a wide variety of stepped structures; we now pare back these rules to their minimum. This allows us to describe a set of techniques that unify a wide variety of cut-and-paste actions under the rubric of lattice kirigami, including adding new material and rejoining material across arbitrary cuts in the sheet. We also explore the use of more complex lattices and the different structures that consequently arise. Regardless of the choice of lattice, creating complex structures may require multiple overlapping kirigami cuts, where subsequent cuts are not performed on a locally flat lattice. Our additive kirigami method describes such cuts, providing a simple methodology and a set of techniques to build a huge variety of complex 3D shapes.

Constrained multi-objective optimization of storage ring lattices

Science.gov (United States)

Husain, Riyasat; Ghodke, A. D.

2018-03-01

The storage ring lattice optimization is a class of constrained multi-objective optimization problem, where in addition to low beam emittance, a large dynamic aperture for good injection efficiency and improved beam lifetime are also desirable. The convergence and computation times are of great concern for the optimization algorithms, as various objectives are to be optimized and a number of accelerator parameters to be varied over a large span with several constraints. In this paper, a study of storage ring lattice optimization using differential evolution is presented. The optimization results are compared with two most widely used optimization techniques in accelerators-genetic algorithm and particle swarm optimization. It is found that the differential evolution produces a better Pareto optimal front in reasonable computation time between two conflicting objectives-beam emittance and dispersion function in the straight section. The differential evolution was used, extensively, for the optimization of linear and nonlinear lattices of Indus-2 for exploring various operational modes within the magnet power supply capabilities.

Deposition and characterization of ZnS/Si heterojunctions produced by vacuum evaporation

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland

1988-01-01

Isotype heterojunctions of ZnS (lattice constant 5.41 A) were grown on silicon (lattice constant 5.43 A) p-n junctions to form a minority-carrier mirror. The deposition process was vacuum evaporation from a ZnS powder source onto a heated (450 C) substrate. Both planar (100) and textured (111) surfaces were used. A reduction of the minority-carrier recombination at the surface was seen from increased short-wavelength quantum response and increased illuminated open-circuit voltage. The minority-carrier diffusion length was not degraded by the process.

Triple-axis X-ray reciprocal space mapping of In{sub y}Ga{sub 1-y}As thermophotovoltaic diodes grown on (1 0 0) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Dashiell, M.W.; Ehsani, H.; Sander, P.C. [Lockheed Martin Corporation, Schenectady, NY 12301-1072 (United States); Newman, F.D. [Emcore Corporation, Albuquerque, NM 87123 (United States); Wang, C.A. [MIT Lincoln Laboratory, Lexington, MA 02420 (United States); Shellenbarger, Z.A. [Sarnoff Corporation, Princeton NJ, 08543-5300 (United States); Donetski, D.; Gu, N.; Anikeev, S. [Department of Electrical Engineering, State University of New York, Stony Brook, NY 11794-2350 (United States)

2008-09-15

Analysis of the composition, strain-relaxation, layer-tilt, and the crystalline quality of In{sub y}Ga{sub 1-y}As/InP{sub 1-x}As{sub x} thermophotovoltaic (TPV) diodes grown by metal-organic vapor phase epitaxy (MOVPE) is demonstrated using triple-axis X-ray reciprocal space mapping techniques. In{sub 0.53}Ga{sub 0.47}As (E{sub gap}=0.74 eV) n/p junction diodes are grown lattice matched (LM) to InP substrates and lattice-mismatched (LMM) In{sub 0.67}Ga{sub 0.33}As (E{sub gap}=0.6 eV) TPV diodes are grown on three-step InP{sub 1-x}As{sub x} (0substrates. X-ray reciprocal space maps about the symmetric (4 0 0) and asymmetric (5 3 3) reciprocal lattice points (RELPs) determine the in-plane and out-of-plane lattice parameters and strain of the In{sub y}Ga{sub 1-y}As TPV active layer and underlying InP{sub 1-x}As{sub x} buffers. Triple-axis X-ray rocking curves about the LMM In{sub 0.67}Ga{sub 0.33}As RELP show an order of magnitude increase of its full-width at half-maximum (FWHM) compared to that from the LM In{sub 0.53}Ga{sub 0.47}As (250 vs. 30 arcsec). Despite the significant RELP broadening, the photovoltaic figure of merits show that the electronic quality of the LMM In{sub 0.67}Ga{sub 0.33}As approaches that of the LM diode material. This indicates that misfit-related crystalline imperfections are not dominating the photovoltaic response of the optimized LMM In{sub 0.67}Ga{sub 0.33}As material compared with the intrinsic recombination processes and/or recombination through native point defects, which would be present in both LMM and LM diode material. However, additional RELP broadening in non-optimized LMM In{sub 0.67}Ga{sub 0.33}As n/p junction diodes does correspond to significant degradation of TPV diode open-circuit voltage and minority carrier lifetime demonstrating that there is correlation between X-ray FWHM and the electronic performance of the LMM TPV diodes. (author)

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Gibbs sampling on large lattice with GMRF

Science.gov (United States)

Marcotte, Denis; Allard, Denis

2018-02-01

Gibbs sampling is routinely used to sample truncated Gaussian distributions. These distributions naturally occur when associating latent Gaussian fields to category fields obtained by discrete simulation methods like multipoint, sequential indicator simulation and object-based simulation. The latent Gaussians are often used in data assimilation and history matching algorithms. When the Gibbs sampling is applied on a large lattice, the computing cost can become prohibitive. The usual practice of using local neighborhoods is unsatisfying as it can diverge and it does not reproduce exactly the desired covariance. A better approach is to use Gaussian Markov Random Fields (GMRF) which enables to compute the conditional distributions at any point without having to compute and invert the full covariance matrix. As the GMRF is locally defined, it allows simultaneous updating of all points that do not share neighbors (coding sets). We propose a new simultaneous Gibbs updating strategy on coding sets that can be efficiently computed by convolution and applied with an acceptance/rejection method in the truncated case. We study empirically the speed of convergence, the effect of choice of boundary conditions, of the correlation range and of GMRF smoothness. We show that the convergence is slower in the Gaussian case on the torus than for the finite case studied in the literature. However, in the truncated Gaussian case, we show that short scale correlation is quickly restored and the conditioning categories at each lattice point imprint the long scale correlation. Hence our approach enables to realistically apply Gibbs sampling on large 2D or 3D lattice with the desired GMRF covariance.

Apparently noninvariant terms of nonlinear sigma models in lattice perturbation theory

International Nuclear Information System (INIS)

Harada, Koji; Hattori, Nozomu; Kubo, Hirofumi; Yamamoto, Yuki

2009-01-01

Apparently noninvariant terms (ANTs) that appear in loop diagrams for nonlinear sigma models are revisited in lattice perturbation theory. The calculations have been done mostly with dimensional regularization so far. In order to establish that the existence of ANTs is independent of the regularization scheme, and of the potential ambiguities in the definition of the Jacobian of the change of integration variables from group elements to 'pion' fields, we employ lattice regularization, in which everything (including the Jacobian) is well defined. We show explicitly that lattice perturbation theory produces ANTs in the four-point functions of the pion fields at one-loop and the Jacobian does not play an important role in generating ANTs.

Properties of pseudoscalar flavour-singlet mesons from 2+1+1 twisted mass lattice QCD

International Nuclear Information System (INIS)

Cichy, Krzysztof; Poznan Univ.; Drach, Vincent; Garcia Ramos, Elena; Jansen, Karl; Michael, Chris; Ottnad, Konstantin; Urbach, Carsten; Zimmermann, Falk

2012-11-01

We study properties of pseudoscalar flavour-singlet mesons from Wilson twisted mass lattice QCD with N f =2+1+1 dynamical quark flavors. Results for masses are presented at three values of the lattice spacing and light quark masses corresponding to values of the pion mass from 230 MeV to 500 MeV. We briefly discuss scaling effects and the light and strange quark mass dependence of M η . In addition we present an exploratory study using Osterwalder-Seiler type strange and charm valence quarks. This approach avoids some of the complications of the twisted mass heavy doublet. We present first results for matching valence and unitary actions and a comparison of statistical uncertainties.

Properties of pseudoscalar flavour-singlet mesons from 2+1+1 twisted mass lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Cichy, Krzysztof [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Poznan Univ. (Poland). Faculty of Physics; Drach, Vincent; Garcia Ramos, Elena; Jansen, Karl [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Michael, Chris [Liverpool Univ. (United Kingdom). Dept. of Mathematical Sciences; Ottnad, Konstantin; Urbach, Carsten; Zimmermann, Falk [Bonn Univ. (Germany). Inst. fuer Strahlen- und Kernphysik

2012-11-15

We study properties of pseudoscalar flavour-singlet mesons from Wilson twisted mass lattice QCD with N{sub f}=2+1+1 dynamical quark flavors. Results for masses are presented at three values of the lattice spacing and light quark masses corresponding to values of the pion mass from 230 MeV to 500 MeV. We briefly discuss scaling effects and the light and strange quark mass dependence of M{sub {eta}}. In addition we present an exploratory study using Osterwalder-Seiler type strange and charm valence quarks. This approach avoids some of the complications of the twisted mass heavy doublet. We present first results for matching valence and unitary actions and a comparison of statistical uncertainties.

BFACF-style algorithms for polygons in the body-centered and face-centered cubic lattices

Energy Technology Data Exchange (ETDEWEB)

Janse van Rensburg, E J [Department of Mathematics and Statistics, York University, Toronto, Ontario M3J 1P3 (Canada); Rechnitzer, A, E-mail: rensburg@yorku.ca, E-mail: andrewr@math.ubc.ca [Department of Mathematics, The University of British Columbia, Vancouver V6T 1Z2, British Columbia (Canada)

2011-04-22

In this paper, the elementary moves of the BFACF-algorithm (Aragao de Carvalho and Caracciolo 1983 Phys. Rev. B 27 1635-45, Aragao de Carvalho and Caracciolo 1983 Nucl. Phys. B 215 209-48, Berg and Foester 1981 Phys. Lett. B 106 323-6) for lattice polygons are generalized to elementary moves of BFACF-style algorithms for lattice polygons in the body-centered (BCC) and face-centered (FCC) cubic lattices. We prove that the ergodicity classes of these new elementary moves coincide with the knot types of unrooted polygons in the BCC and FCC lattices and so expand a similar result for the cubic lattice (see Janse van Rensburg and Whittington (1991 J. Phys. A: Math. Gen. 24 5553-67)). Implementations of these algorithms for knotted polygons using the GAS algorithm produce estimates of the minimal length of knotted polygons in the BCC and FCC lattices.

BFACF-style algorithms for polygons in the body-centered and face-centered cubic lattices

Science.gov (United States)

Janse van Rensburg, E. J.; Rechnitzer, A.

2011-04-01

In this paper, the elementary moves of the BFACF-algorithm (Aragão de Carvalho and Caracciolo 1983 Phys. Rev. B 27 1635-45, Aragão de Carvalho and Caracciolo 1983 Nucl. Phys. B 215 209-48, Berg and Foester 1981 Phys. Lett. B 106 323-6) for lattice polygons are generalized to elementary moves of BFACF-style algorithms for lattice polygons in the body-centered (BCC) and face-centered (FCC) cubic lattices. We prove that the ergodicity classes of these new elementary moves coincide with the knot types of unrooted polygons in the BCC and FCC lattices and so expand a similar result for the cubic lattice (see Janse van Rensburg and Whittington (1991 J. Phys. A: Math. Gen. 24 5553-67)). Implementations of these algorithms for knotted polygons using the GAS algorithm produce estimates of the minimal length of knotted polygons in the BCC and FCC lattices.

BFACF-style algorithms for polygons in the body-centered and face-centered cubic lattices

International Nuclear Information System (INIS)

Janse van Rensburg, E J; Rechnitzer, A

2011-01-01

In this paper, the elementary moves of the BFACF-algorithm (Aragao de Carvalho and Caracciolo 1983 Phys. Rev. B 27 1635-45, Aragao de Carvalho and Caracciolo 1983 Nucl. Phys. B 215 209-48, Berg and Foester 1981 Phys. Lett. B 106 323-6) for lattice polygons are generalized to elementary moves of BFACF-style algorithms for lattice polygons in the body-centered (BCC) and face-centered (FCC) cubic lattices. We prove that the ergodicity classes of these new elementary moves coincide with the knot types of unrooted polygons in the BCC and FCC lattices and so expand a similar result for the cubic lattice (see Janse van Rensburg and Whittington (1991 J. Phys. A: Math. Gen. 24 5553-67)). Implementations of these algorithms for knotted polygons using the GAS algorithm produce estimates of the minimal length of knotted polygons in the BCC and FCC lattices.

Finite-lattice-spacing corrections to masses and g factors on a lattice

International Nuclear Information System (INIS)

Roskies, R.; Wu, J.C.

1986-01-01

We suggest an alternative method for extracting masses and g factors from lattice calculations. Our method takes account of more of the infrared and ultraviolet lattice effects. It leads to more reasonable results in simulations of QED on a lattice

Acidogenic fermentation characteristics of different types of protein-rich substrates in food waste to produce volatile fatty acids.

Science.gov (United States)

Shen, Dongsheng; Yin, Jun; Yu, Xiaoqin; Wang, Meizhen; Long, Yuyang; Shentu, Jiali; Chen, Ting

2017-03-01

In this study, tofu and egg white, representing typical protein-rich substrates in food waste based on vegetable and animal protein, respectively, were investigated for producing volatile fatty acids (VFAs) by acidogenic fermentation. VFA production, composition, conversion pathways and microbial communities in acidogenesis from tofu and egg white with and without hydrothermal (HT) pretreatment were compared. The results showed HT pretreatment could improve the VFA production of tofu but not for egg white. The optimum VFA yields were 0.46g/gVS (tofu with HT) and 0.26g/gVS (egg white without HT), respectively. Tofu could directly produce VFAs through the Stickland reaction, while egg white was converted to lactate and VFAs simultaneously. About 30-40% of total protein remained in all groups after fermentation. Up to 50% of the unconverted soluble protein in the HT groups was protease. More lactate-producing bacteria, mainly Leuconostoc and Lactobacillus, were present during egg white fermentation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Lattices for laymen: a non-specialist's introduction to lattice gauge theory

International Nuclear Information System (INIS)

Callaway, D.J.E.

1985-01-01

The review on lattice gauge theory is based upon a series of lectures given to the Materials Science and Technology Division at Argonne National Laboratory. Firstly the structure of gauge theories in the continuum is discussed. Then the lattice formulation of these theories is presented, including quantum electrodynamics and non-abelian lattice gauge theories. (U.K.)

Characterization of purified α-amylase produced by Aspergillus terreus NCFT 4269.10 using pearl millet as substrate

Directory of Open Access Journals (Sweden)

Bijay Kumar Sethi

2016-12-01

Full Text Available α-amylase was produced by Aspergillus terreus NCFT 4269.10 using both liquid static surface (LSSF and solid-state fermentation using pearl millet residues as substrate. The maximum production of α-amylase was noticed at 30°C incubated for 96h. The crude α-amylase was purified to electrophoretic homogeneity and characterized. Characterization of amylase confirmed that the purified α-amylase was found to be most stable at pH 5.0, 60°C temperature, and a substrate concentration of 1.25%. The enzyme was active for 40 min at 70°C with an optimum enzyme–substrate reaction time of 60 min. Amylase was compatible with all detergents tested having highest activity with Surf excel followed by Henko and Ariel. SDS and Tween 20 reduced the activity. Among the metal ions tested, the maximum α-amylase activity was attained in the presence of Ca2+, followed by Mg2+ and Mn2+. The activity of α-amylase was not considerably affected in the presence of ethylenediaminetetraacetic acid and Triton X-100. Amylase activity was accelerated in the presence of sodium lauryl sulfate and phenylmethylsulfonyl fluoride did not significantly (or slightly affect the activity and stability. Tween 20, urea (5%, and the reducing agent, β-mercaptoethanol significantly inhibited the activity of α-amylase. Owing to its noteworthy stability in the presence of detergents, additives, inhibitors, and metal ions, this α-amylase could be an impending enzyme for significant industrial exploitations.

Influence of baking on the photoluminescence spectra of In{sub 1-x} Ga{sub x} As{sub y} P{sub 1-y} solid solutions grown on Inp substrates

Energy Technology Data Exchange (ETDEWEB)

Mishurnyi, V.A.; Gorbatchev, A.Y.; Anda, F. De; Nieto N, J. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

2004-07-01

The influence of thermal treatments on the photoluminescence spectra of In{sub 1-x} Ga{sub x} As{sub y} P{sub 1-y} epitaxial layers of various compositions grown by LPE on In P substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking, their surface was covered by spin-on SiO{sub 2} layers. The photoluminescence spectra did not change for solid solutions whose compositions were near In P and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because the appearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whose compositions lie inside a theoretically predicted miscibility gap. (Author)

Lattice QCD on fine lattices

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Stefan [DESY (Germany). Neumann Inst. for Computing

2016-11-01

These configurations are currently in use in many on-going projects carried out by researchers throughout Europe. In particular this data will serve as an essential input into the computation of the coupling constant of QCD, where some of the simulations are still on-going. But also projects computing the masses of hadrons and investigating their structure are underway as well as activities in the physics of heavy quarks. As this initial project of gauge field generation has been successful, it is worthwhile to extend the currently available ensembles with further points in parameter space. These will allow to further study and control systematic effects like the ones introduced by the finite volume, the non-physical quark masses and the finite lattice spacing. In particular certain compromises have still been made in the region where pion masses and lattice spacing are both small. This is because physical pion masses require larger lattices to keep the effects of the finite volume under control. At light pion masses, a precise control of the continuum extrapolation is therefore difficult, but certainly a main goal of future simulations. To reach this goal, algorithmic developments as well as faster hardware will be needed.

Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates

Science.gov (United States)

Cahay, M.; Garre, K.; Wu, X.; Poitras, D.; Lockwood, D. J.; Fairchild, S.

2006-06-01

Thin films of lanthanum monosulfide (LaS) have been deposited on Si (100) substrates by pulsed laser deposition. The films are golden yellow in appearance with a mirrorlike surface morphology and a sheet resistance around 0.1 Ω/□, as measured using a four-probe measurement technique. The thin films are characterized by atomic force microscopy (AFM), x-ray diffraction (XRD) analysis, high resolution transmission electron microscopy (HRTEM), ellipsometry, and Raman spectroscopy. The root-mean-square variation of (1 μm thick) film surface roughness measured over a 1 μm2 area by AFM was found to be 1.74 nm. XRD analysis of fairly thick films (micrometer size) reveals the growth of the cubic rocksalt structure with a lattice constant of 5.863(7) A˚, which is close to the bulk LaS value. HRTEM images reveal that the films are comprised of nanocrystals separated by regions of amorphous material. Two beam bright field TEM images show that there is a strain contrast in the Si substrate right under the interface with the LaS film and penetrating into the Si substrate. This suggests that there is an initial epitaxial-like growth of the LaS film on the Si substrate that introduces a strain as a result of the 8% lattice mismatch between the film and substrate. Ellipsometry measurements of the LaS films are well characterized by a Drude-Lorentz model from which an electron concentration of about 2.52×1022 cm-3 and a mobility around 8.5 cm2/V s are derived. Typical crystalline LaS features were evident in Raman spectra of the films, but the spectra also revealed their disordered (polycrystalline) nature.

Image matching navigation based on fuzzy information

Institute of Scientific and Technical Information of China (English)

田玉龙; 吴伟仁; 田金文; 柳健

2003-01-01

In conventional image matching methods, the image matching process is mostly based on image statistic information. One aspect neglected by all these methods is that there is much fuzzy information contained in these images. A new fuzzy matching algorithm based on fuzzy similarity for navigation is presented in this paper. Because the fuzzy theory is of the ability of making good description of the fuzzy information contained in images, the image matching method based on fuzzy similarity would look forward to producing good performance results. Experimental results using matching algorithm based on fuzzy information also demonstrate its reliability and practicability.

A pentacene monolayer trapped between graphene and a substrate.

Science.gov (United States)

Zhang, Qicheng; Peng, Boyu; Chan, Paddy Kwok Leung; Luo, Zhengtang

2015-09-21

A self-assembled pentacene monolayer can be fabricated between the solid-solid interface of few-layered graphene (FLG) and the mica substrate, through a diffusion-spreading method. By utilizing a transfer method that allows us to sandwich pentacene between graphene and mica, followed by controlled annealing, we enabled the diffused pentacene to be trapped in the interfaces and led to the formation of a stable monolayer. We found that the formation of a monolayer is kinetically favored by using a 2D Ising lattice gas model for pentacene trapped between the graphene-substrate interfaces. This kinetic Monte Carlo simulation results indicate that, due to the graphene substrate enclosure, the spreading of the first layer proceeds faster than the second layer, as the kinetics favors the filling of voids by molecules from the second layer. This graphene assisted monolayer assembly method provides a new avenue for the fabrication of two-dimensional monolayer structures.

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-01-01

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

Recent progress in MBE grown HgCdTe materials and devices at UWA

Science.gov (United States)

Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

2016-05-01

HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

No-neighbours recurrence schemes for space-time Green's functions on a 3D simple cubic lattice

NARCIS (Netherlands)

De Hon, Bastiaan P.; Floris, Sander J.; Arnold, John M.

2018-01-01

Application of multivariate creative telescoping to a finite triple sum representation of the discrete space-time Green's function for an arbitrary numeric (non-symbolic) lattice point on a 3D simple cubic lattice produces a fast, no-neighbours, seventh-order, eighteenth-degree, discrete-time

Introducing lattice strain to graphene encapsulated in hBN

Science.gov (United States)

Tomori, Hikari; Hiraide, Rineka; Ootuka, Youiti; Watanabe, Kenji; Taniguchi, Takashi; Kanda, Akinobu

Due to the characteristic lattice structure, lattice strain in graphene produces an effective gauge field. Theories tell that by controlling spatial variation of lattice strain, one can tailor the electronic state and transport properties of graphene. For example, under uniaxial local strain, graphene exhibits a transport gap at low energies, which is attractive for a graphene application to field effect devices. Here, we develop a method for encapsulating a strained graphene film in hexagonal boron-nitride (hBN). It is known that the graphene carrier mobility is significantly improved by the encapsulation of graphene in hBN, which has never been applied to strained graphene. We encapsulate graphene in hBN using the van der Waals assembly method. Strain is induced by sandwiching a graphene film between patterned hBN sheets. Spatial variation of strain is confirmed with micro Raman spectroscopy. Transport measurement of encapsulated strained graphene is in progress.

Use of headspace SPME-GC-MS for the analysis of the volatiles produced by indoor molds grown on different substrates.

Science.gov (United States)

Van Lancker, Fien; Adams, An; Delmulle, Barbara; De Saeger, Sarah; Moretti, Antonio; Van Peteghem, Carlos; De Kimpe, Norbert

2008-10-01

An automated headspace solid phase microextraction method followed by GC-MS analysis was used to evaluate and compare the in vitro production of microbial volatile organic compounds (MVOCs) on malt extract agar, plasterboard and wallpaper. Five fungal strains were isolated from the walls of water-damaged houses and identified. In addition, four other common molds were studied. In general, MVOC production was the highest on malt extract agar. On this synthetic medium, molds typically produced 2-methylpropanol, 2-methylbutanol and 3-methylbutanol. On wallpaper, mainly 2-ethylhexanol, methyl 2-ethylhexanoate and compounds of the C8-complex such as 1-octene-3-ol, 3-octanone, 3-octanol and 1,3-octadiene were detected. The detection of 2-ethylhexanol and methyl 2-ethylhexanoate indicates an enhanced degradation of the substrate by most fungi. For growth on plasterboard, no typical metabolites were detected. Despite these metabolite differences on malt extract agar, wallpaper and plasterboard, some molds also produced specific compounds independently of the used substrate, such as trichodiene from Fusarium sporotrichioides and aristolochene from Penicillium roqueforti. Therefore, these metabolites can be used as markers for the identification and maybe also mycotoxin production of these molds. All five investigated Penicillium spp. in this study were able to produce two specific diterpenes, which were not produced by the other species studied. These two compounds, which remain unidentified until now, therefore seem specific for Penicillium spp. and are potentially interesting for the monitoring of this fungal genus. Further experiments will be performed with other Penicillium spp. to study the possibility that these two compounds are specific for this group of molds.

On singularities of lattice varieties

OpenAIRE

Mukherjee, Himadri

2013-01-01

Toric varieties associated with distributive lattices arise as a fibre of a flat degeneration of a Schubert variety in a minuscule. The singular locus of these varieties has been studied by various authors. In this article we prove that the number of diamonds incident on a lattice point $\\a$ in a product of chain lattices is more than or equal to the codimension of the lattice. Using this we also show that the lattice varieties associated with product of chain lattices is smooth.

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

Energy Technology Data Exchange (ETDEWEB)

Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

2008-07-01

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

Reactor lattice codes

International Nuclear Information System (INIS)

Kulikowska, T.

2001-01-01

The description of reactor lattice codes is carried out on the example of the WIMSD-5B code. The WIMS code in its various version is the most recognised lattice code. It is used in all parts of the world for calculations of research and power reactors. The version WIMSD-5B is distributed free of charge by NEA Data Bank. The description of its main features given in the present lecture follows the aspects defined previously for lattice calculations in the lecture on Reactor Lattice Transport Calculations. The spatial models are described, and the approach to the energy treatment is given. Finally the specific algorithm applied in fuel depletion calculations is outlined. (author)

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

International Nuclear Information System (INIS)

Rodriguez, J. B.; Cerutti, L.; Grech, P.; Tournie, E.

2009-01-01

We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature

EPR of the lattice damage from energetic Si in silicon at 40K

International Nuclear Information System (INIS)

Brower, K.L.

1976-01-01

An EPR study of the lattice damage produced by 14.2-MeV neutrons in p-type silicon at 4 0 K is presented. The EPR measurements were made at 5 0 K without any intermediate warmup of the sample. The EPR spectra indicate that each damage region, which is produced by a Si recoil of energy less than or equal to 1.89 MeV, is characterized by a high density of localized defects. A significant fraction of the lattice damage consists of distorted (110) 4-vacancies (Si-P3) embedded in a quasi-crystalline environment. Although a search for isolated vacancies was made, none was found. Even though the defects are complex and overlap, there is no evidence that a less than or equal to 1.89-MeV Si recoil produces amorphous regions at 4 0 K. Upon annealing the lattice damage to 50 0 K, a trace of the Si-G6 spectrum due to (V + V) + was observed. After annealing to 500 0 K, the Si-B3 center, which has recently been identified as a [001] Si split interstitial, emerged

Void lattices

International Nuclear Information System (INIS)

Chadderton, L.T.; Johnson, E.; Wohlenberg, T.

1976-01-01

Void lattices in metals apparently owe their stability to elastically anisotropic interactions. An ordered array of voids on the anion sublattice in fluorite does not fit so neatly into this scheme of things. Crowdions may play a part in the formation of the void lattice, and stability may derive from other sources. (Auth.)

Steady-State Anderson Accelerated Coupling of Lattice Boltzmann and Navier–Stokes Solvers

KAUST Repository

Atanasov, Atanas

2016-10-17

We present an Anderson acceleration-based approach to spatially couple three-dimensional Lattice Boltzmann and Navier–Stokes (LBNS) flow simulations. This allows to locally exploit the computational features of both fluid flow solver approaches to the fullest extent and yields enhanced control to match the LB and NS degrees of freedom within the LBNS overlap layer. Designed for parallel Schwarz coupling, the Anderson acceleration allows for the simultaneous execution of both Lattice Boltzmann and Navier–Stokes solver. We detail our coupling methodology, validate it, and study convergence and accuracy of the Anderson accelerated coupling, considering three steady-state scenarios: plane channel flow, flow around a sphere and channel flow across a porous structure. We find that the Anderson accelerated coupling yields a speed-up (in terms of iteration steps) of up to 40% in the considered scenarios, compared to strictly sequential Schwarz coupling.

Modified kinetic-hydraulic UASB reactor model for treatment of wastewater containing biodegradable organic substrates.

Science.gov (United States)

El-Seddik, Mostafa M; Galal, Mona M; Radwan, A G; Abdel-Halim, Hisham S

2016-01-01

This paper addresses a modified kinetic-hydraulic model for up-flow anaerobic sludge blanket (UASB) reactor aimed to treat wastewater of biodegradable organic substrates as acetic acid based on Van der Meer model incorporated with biological granules inclusion. This dynamic model illustrates the biomass kinetic reaction rate for both direct and indirect growth of microorganisms coupled with the amount of biogas produced by methanogenic bacteria in bed and blanket zones of reactor. Moreover, the pH value required for substrate degradation at the peak specific growth rate of bacteria is discussed for Andrews' kinetics. The sensitivity analyses of biomass concentration with respect to fraction of volume of reactor occupied by granules and up-flow velocity are also demonstrated. Furthermore, the modified mass balance equations of reactor are applied during steady state using Newton Raphson technique to obtain a suitable degree of freedom for the modified model matching with the measured results of UASB Sanhour wastewater treatment plant in Fayoum, Egypt.

Estudo qualiquantitativo do biogás produzido por substratos em biodigestores tipo batelada Qualiquantitatve study of biogas produced by substrates in batch biodigestors

Directory of Open Access Journals (Sweden)

João A. Galbiatti

2010-04-01

Full Text Available A presente pesquisa foi desenvolvida no Departamento de Engenharia Rural da FCAV/UNESP, SP, Brasil, com o objetivo de se estudar, qualiquantitativamente, o biogás produzido por 5 substratos que, após utilizados na digestão anaeróbia, foram caracterizados como: 1 - Esterco de aves de corte com cama de capim napier (EACN; 2 - Esterco de aves de corte com cama de capim napier triturado (EACNT; 3 - Esterco suíno (ES; 4 - Esterco bovino (EB e 5 - Esterco de bovino misturado com 50% de bagaço de cana-de-açúcar (EB50C. Dos dados levantados concluiu-se que: o substrato EACN e o ES produziram volumes maiores e menores de biogás, respectivamente, comparados com os demais; a mistura de bagaço de cana-de-açúcar no substrato EB prejudica a produção acumulada de biogás e sua qualidade; a partir dos 57 dias após o enchimento dos biodigestores todos os substratos já produziam biogás com teor de metano superior a 48%, com exceção do substrato ES; o substrato triturado (EACNT não apresentou características muito distintas do substrato não triturado (EACN; a qualidade do biogás na fase de produção máxima é semelhante para todos os substratos estudados; o biogás que mostrou maior valor de metano na sua composição foi o produzido com EB, superior em até 17,7% à produção do EACNT.Aiming to study the biogas produced by 5 substrates from both quality and quantity point of view, this research was conducted at the Rural Engineering Department of FCAV/UNESP - Brazil, State of São Paulo. The substractes that were used in the anaerobic digestion were characterized as: 1 - Slaughter fowls' manure with napier grass bed (MFNG; 2 - Slaughter fowls' manure with triturate napier grass bed (MFNGT; 3 - Suine manure (SM; 4 - Bovine manure (BM and 5 - Bovine manure mixed with 50% of sugarcane bagasse (BM50S. From the data colIected it was concluded that: the substract (MFNG and the substract containing SM produced higher and lower volumes of biogas

Lattice theory for nonspecialists

International Nuclear Information System (INIS)

Hari Dass, N.D.

1984-01-01

These lectures were delivered as part of the academic training programme at the NIKHEF-H. These lectures were intended primarily for experimentalists, and theorists not specializing in lattice methods. The goal was to present the essential spirit behind the lattice approach and consequently the author has concentrated mostly on issues of principle rather than on presenting a large amount of detail. In particular, the author emphasizes the deep theoretical infra-structure that has made lattice studies meaningful. At the same time, he has avoided the use of heavy formalisms as they tend to obscure the basic issues for people trying to approach this subject for the first time. The essential ideas are illustrated with elementary soluble examples not involving complicated mathematics. The following subjects are discussed: three ways of solving the harmonic oscillator problem; latticization; gauge fields on a lattice; QCD observables; how to solve lattice theories. (Auth.)

Short-distance matrix elements for $D$-meson mixing for 2+1 lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Chang, Chia Cheng [Univ. of Illinois, Champaign, IL (United States)

2015-01-01

We study the short-distance hadronic matrix elements for D-meson mixing with partially quenched N_f = 2+1 lattice QCD. We use a large set of the MIMD Lattice Computation Collaboration's gauge configurations with a² tadpole-improved staggered sea quarks and tadpole-improved Lüscher-Weisz gluons. We use the a² tadpole-improved action for valence light quarks and the Sheikoleslami-Wohlert action with the Fermilab interpretation for the valence charm quark. Our calculation covers the complete set of five operators needed to constrain new physics models for D-meson mixing. We match our matrix elements to the MS-NDR scheme evaluated at 3 GeV. We report values for the Beneke-Buchalla-Greub-Lenz-Nierste choice of evanescent operators.

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

Science.gov (United States)

Postiglione, William Michael

. Specular XRD measurements confirmed highly crystalline films with narrow rocking curve FWHMs on the order of 0.05°. The optimum thickness found to maximize mobility was around 100 nm for films deposited at 8 A/min. These films exhibited room temperature mobilities in excess of 50 cm 2V-1s-1 at carrier concentrations 3 x 1020 cm-3 across 4 different substrate materials (LaAlO3, SrTiO3, GdScO3, and PrScO 3). Contrary to expectations, our findings showed no dependence of mobility on substrate mismatch, indicating that threading dislocations are either not the dominant scattering source, or that threading dislocation density in the films was constant regardless of the substrate. The highest mobility film achieved in this study, 70 cm2V -1s-1, was measured for a film grown at a considerably slower rate ( 2 A/min) and lower thickness ( 380 A). Said film was deposited on a PrScO3 (110) substrate, the most closely lattice matched substrate commercially available for BSO (-2.2% pseudo-cubic). This film showed a high out-of-plane lattice parameter from X-ray diffraction (aop = 4.158 A), suggesting a significantly strained film. This result highlights the possibility of sputtering coherent, fully strained, BSO films, far exceeding the theoretical critical thickness for misfit dislocation formation, on closely lattice matched substrates. Overall, this work validates the concept of high pressure oxygen sputtering to produce high mobility La-doped BSO films. The mobility values reported in this thesis are comparable to those found for films deposited via pulsed laser deposition in previous studies, and represent record values for sputter deposited BSO thin films.

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

Science.gov (United States)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Multiple nonlinear Bragg diffraction of femtosecond laser pulses in a {\\chi^{(2)}} photonic lattice with hexagonal domains

Science.gov (United States)

Vyunishev, A. M.; Arkhipkin, V. G.; Baturin, I. S.; Akhmatkhanov, A. R.; Shur, V. Ya; Chirkin, A. S.

2018-04-01

The frequency doubling of femtosecond laser pulses in a two-dimensional (2D) rectangular nonlinear photonic lattice with hexagonal domains is studied experimentally and theoretically. The broad fundamental spectrum enables frequency conversion under nonlinear Bragg diffraction for a series of transverse orders at a fixed longitudinal quasi-phase-matching order. The consistent nonstationary theory of the frequency doubling of femtosecond laser pulses is developed using the representation based on the reciprocal lattice of the structure. The calculated spatial distribution of the second-harmonic spectral intensity agrees well with the experimental data. The condition for multiple nonlinear Bragg diffraction in a 2D nonlinear photonic lattice is offered. The hexagonal shape of the domains contributes to multibeam second harmonic excitation. The maximum conversion efficiency for a series of transverse orders in the range 0.01%-0.03% is obtained.

Outcomes of macular hole surgery in patients treated intraoperatively for retinal breaks and/or lattice degeneration.

Science.gov (United States)

Hwang, John; Escariao, Paulo; Iranmanesh, Reza; Tosi, Gian Marco; Chang, Stanley

2007-01-01

To assess the outcome of macular hole surgery in patients treated intraoperatively for retinal breaks and/or lattice degeneration. Retrospective review of patients who underwent macular hole surgery from September 1998 to August 2005. Outcomes in eyes that received intraoperative endolaser photocoagulation for retinal breaks and/or lattice degeneration were compared to outcomes in a case-matched control group without retinal breaks or lattice degeneration. A total of 235 consecutive macular hole surgery cases were reviewed. Twenty-four eyes from 24 patients received intraoperative endolaser photocoagulation for retinal breaks and/or lattice degeneration. Macular hole closure occurred in all case and control eyes without any incidence of postoperative retinal detachment. Best-corrected visual acuity improvement of at least three Snellen lines occurred in 100% of case eyes and 92% of control eyes. Outcomes of macular hole surgery in patients with retinal breaks and/or lattice degeneration are similar to outcomes in the overall population when these conditions are treated with intraoperative endolaser photocoagulation. Postoperative retinal detachment does not appear to be correlated with treated retinal tears and greater attention should focus on detecting and managing intraoperative breaks. In our hands, routine use panoramic viewing has replaced indirect ophthalmoscopy, by saving time, and reducing the risk of contamination.

Matching of heavy-light flavour currents between HQET at order 1/m and QCD. I. Strategy and tree-level study

Energy Technology Data Exchange (ETDEWEB)

Della Morte, Michele [Instituto de Fisica Corpuscular IFIC (CSIC), Paterna (Spain); Dooling, Samantha; Heitger, Jochen [Muenster Univ. (Germany). Inst. fuer Theoretische Physik 1; Hesse, Dirk [Parma Univ. degli Studi (Italy); Simma, Hubert [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Collaboration: ALPHA Collaboration

2013-12-15

We present a strategy how to match the full set of components of the heavy-light axial and vector currents in Heavy Quark Effective Theory (HQET), up to and including 1/m{sub h}-corrections, to QCD. While the ultimate goal is to apply these matching conditions non-perturbatively, in this study we first have implemented them at tree-level, in order to find good choices of the matching observables with small O(1/m{sup 2}{sub h}) contributions. They can later be employed in the non-perturbative matching procedure which is a crucial part of precision HQET computations of semileptonic decay form factors in lattice QCD.

Equation level matching: An extension of the method of matched asymptotic expansion for problems of wave propagation

Science.gov (United States)

Faria, Luiz; Rosales, Rodolfo

2017-11-01

We introduce an alternative to the method of matched asymptotic expansions. In the ``traditional'' implementation, approximate solutions, valid in different (but overlapping) regions are matched by using ``intermediate'' variables. Here we propose to match at the level of the equations involved, via a ``uniform expansion'' whose equations enfold those of the approximations to be matched. This has the advantage that one does not need to explicitly solve the asymptotic equations to do the matching, which can be quite impossible for some problems. In addition, it allows matching to proceed in certain wave situations where the traditional approach fails because the time behaviors differ (e.g., one of the expansions does not include dissipation). On the other hand, this approach does not provide the fairly explicit approximations resulting from standard matching. In fact, this is not even its aim, which to produce the ``simplest'' set of equations that capture the behavior. Ruben Rosales work was partially supported by NSF Grants DMS-1614043 and DMS-1719637.

EXTRACELLULAR PROTEINS PRODUCED BY DIFFERENT SPECIES OF THE FUNGUS TRICHODERMA ON SECONDARY PAPER MILL SLUDGE SUBSTRATE

Directory of Open Access Journals (Sweden)

Ida Vaskova,

2012-01-01

Full Text Available Kraft pulping is the most commonly used pulping process in the pulp and paper industry. In this process wood chips are chemically delignified using sodium sulfide and sodium hydroxide. Delignification is usually followed by mechanical fiberization and a bleaching process of the resulting wood pulp. In addition to lignin-free wood pulp, this process also produces waste that contains residues of used chemicals, lignin, cellulose, hemicelluloses, and small amounts of other wood components. Because of the worldwide large-scale production of paper, the sludge from paper mills contributes significantly to environmental pollution. Although there have been great efforts being made to utilize this lignin-rich material, sludge is mostly disposed in landfills or incinerated in a boiler. This research project used secondary sludge as a substrate for 7 wood-decay fungi taxonomically belonging to the genus Trichoderma. The examined fungi expressed the capability of consuming sludge components as a carbon source to produce extracellular proteins. The proteins were separated by gel electrophoresis. Before and after fungi cultivation, the sludge was analyzed by Fourier transform infrared spectroscopy (FTIR.

SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

KAUST Repository

Zou, Bin; Petrov, Peter K.; Alford, Neil McN.

2013-01-01

A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants

Substrate dependent morphologies of self-assembled nanocrystalline manganite films: An atomic force microscopy study

International Nuclear Information System (INIS)

Kale, S.N.; Mona, J.; Ganesan, V.; Choudhary, R.J.; Phase, D.M.

2009-06-01

Thin films of La 0 .7Sr 0 .3MnO 3 (LSMO) have been deposited on different substrates: Si (001), Al 2 O 3 (AlO) (0001) and LaAlO 3 (LAO) (001), using a pulsed laser deposition system. 100 nm films have been deposited at substrate temperature of 700 deg C and oxygen partial pressure of 400 mTorr. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al 2 O 3 substrates, while a c-axis oriented growth on LAO substrate. Atomic force microscopy images exhibit interesting island-like morphology of grain size ∼ 250 nm on Si substrate. Similar morphology with much smaller (∼ 150 nm), closely packed islands are seen to grow on AlO substrate. Films on LAO show comparatively a smooth morphology with the grains size less than 100 nm, decorated by characteristic depressions at the grain boundaries. The formation of self-assembled nanostructures can be understood on the basis of film-substrate lattice misfit, strains in the systems and eventual growth of the films to attain energy minimization (author)

Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

2015-12-01

Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

MEETING: Lattice 88

Energy Technology Data Exchange (ETDEWEB)

Mackenzie, Paul

1989-03-15

The forty-year dream of understanding the properties of the strongly interacting particles from first principles is now approaching reality. Quantum chromodynamics (QCD - the field theory of the quark and gluon constituents of strongly interacting particles) was initially handicapped by the severe limitations of the conventional (perturbation) approach in this picture, but Ken Wilson's inventions of lattice gauge theory and renormalization group methods opened new doors, making calculations of masses and other particle properties possible. Lattice gauge theory became a major industry around 1980, when Monte Carlo methods were introduced, and the first prototype calculations yielded qualitatively reasonable results. The promising developments over the past year were highlighted at the 1988 Symposium on Lattice Field Theory - Lattice 88 - held at Fermilab.

MEETING: Lattice 88

International Nuclear Information System (INIS)

Mackenzie, Paul

1989-01-01

The forty-year dream of understanding the properties of the strongly interacting particles from first principles is now approaching reality. Quantum chromodynamics (QCD - the field theory of the quark and gluon constituents of strongly interacting particles) was initially handicapped by the severe limitations of the conventional (perturbation) approach in this picture, but Ken Wilson's inventions of lattice gauge theory and renormalization group methods opened new doors, making calculations of masses and other particle properties possible. Lattice gauge theory became a major industry around 1980, when Monte Carlo methods were introduced, and the first prototype calculations yielded qualitatively reasonable results. The promising developments over the past year were highlighted at the 1988 Symposium on Lattice Field Theory - Lattice 88 - held at Fermilab

Superalloy Lattice Block Developed for Use in Lightweight, High-Temperature Structures

Science.gov (United States)

Hebsur, Mohan G.; Whittenberger, J. Daniel; Krause, David L.

2003-01-01

Successful development of advanced gas turbine engines for aircraft will require lightweight, high-temperature components. Currently titanium-aluminum- (TiAl) based alloys are envisioned for such applications because of their lower density (4 g/cm3) in comparison to superalloys (8.5 g/cm3), which have been utilized for hot turbine engine parts for over 50 years. However, a recently developed concept (lattice block) by JAMCORP, Inc., of Willmington, Massachusetts, would allow lightweight, high-temperature structures to be directly fabricated from superalloys and, thus, take advantage of their well-known, characterized properties. In its simplest state, lattice block is composed of thin ligaments arranged in a three dimensional triangulated trusslike configuration that forms a structurally rigid panel. Because lattice block can be fabricated by casting, correctly sized hardware is produced with little or no machining; thus very low cost manufacturing is possible. Together, the NASA Glenn Research Center and JAMCORP have extended their lattice block methodology for lower melting materials, such as Al alloys, to demonstrate that investment casting of superalloy lattice block is possible. This effort required advances in lattice block pattern design and assembly, higher temperature mold materials and mold fabrication technology, and foundry practice suitable for superalloys (ref. 1). Lattice block panels have been cast from two different Ni-base superalloys: IN 718, which is the most commonly utilized superalloy and retains its strength up to 650 C; and MAR M247, which possesses excellent mechanical properties to at least 1100 C. In addition to the open-cell lattice block geometry, same-sized lattice block panels containing a thin (1-mm-thick) solid face on one side have also been cast from both superalloys. The elevated-temperature mechanical properties of the open cell and face-sheeted superalloy lattice block panels are currently being examined, and the

Weak coupling theory of the ripplon limited mobility of a 2-D electron lattice

International Nuclear Information System (INIS)

Dahm, A.J.; Mehrotra, R.

1981-01-01

The one ripplon-n phonon scattering contribution to the mobility of a 2D electron lattice supported by a liquid helium substrate is calculated in first order perturbation theory to all orders of n in the weak coupling limit. The Debye Waller factor is shown to limit the momentum transfer at large ripplon wave-vectors and high temperatures causing a minimum in the mobility as a function of temperature. (orig.)

Local lattice-gas model for immiscible fluids

International Nuclear Information System (INIS)

Chen, S.; Doolen, G.D.; Eggert, K.; Grunau, D.; Loh, E.Y.

1991-01-01

We present a lattice-gas model for two-dimensional immiscible fluid flows with surface tension that uses strictly local collision rules. Instead of using a local total color flux as Somers and Rem [Physica D 47, 39 (1991)], we use local colored holes to be the memory of particles of the same color. Interactions between walls and fluids are included that produce arbitrary contact angles

Surface adsorption of lattice HP proteins: Thermodynamics and structural transitions using Wang-Landau sampling

International Nuclear Information System (INIS)

Li Yingwai; Landau, David P; Wüst, Thomas

2012-01-01

Wang-Landau sampling has been applied to investigate the thermodynamics and structural properties of a lattice hydrophobic-polar heteropolymer (the HP protein model) interacting with an attractive substrate. For simplicity, we consider a short HP sequence consisting of only 36 monomers interacting with a substrate which attracts all monomers in the sequence. The conformational “phase transitions” have been identified by a canonical analysis of the specific heat and suitable structural observables. Three major “transitions”, namely, adsorption, hydrophobic core formation and “flattening” of adsorbed structures, are observed. Depending on the surface attractive strength relative to the intra-protein attraction among the H monomers, these processes take place in different sequences upon cooling.

Matching biomedical ontologies based on formal concept analysis.

Science.gov (United States)

Zhao, Mengyi; Zhang, Songmao; Li, Weizhuo; Chen, Guowei

2018-03-19

The goal of ontology matching is to identify correspondences between entities from different yet overlapping ontologies so as to facilitate semantic integration, reuse and interoperability. As a well developed mathematical model for analyzing individuals and structuring concepts, Formal Concept Analysis (FCA) has been applied to ontology matching (OM) tasks since the beginning of OM research, whereas ontological knowledge exploited in FCA-based methods is limited. This motivates the study in this paper, i.e., to empower FCA with as much as ontological knowledge as possible for identifying mappings across ontologies. We propose a method based on Formal Concept Analysis to identify and validate mappings across ontologies, including one-to-one mappings, complex mappings and correspondences between object properties. Our method, called FCA-Map, incrementally generates a total of five types of formal contexts and extracts mappings from the lattices derived. First, the token-based formal context describes how class names, labels and synonyms share lexical tokens, leading to lexical mappings (anchors) across ontologies. Second, the relation-based formal context describes how classes are in taxonomic, partonomic and disjoint relationships with the anchors, leading to positive and negative structural evidence for validating the lexical matching. Third, the positive relation-based context can be used to discover structural mappings. Afterwards, the property-based formal context describes how object properties are used in axioms to connect anchor classes across ontologies, leading to property mappings. Last, the restriction-based formal context describes co-occurrence of classes across ontologies in anonymous ancestors of anchors, from which extended structural mappings and complex mappings can be identified. Evaluation on the Anatomy, the Large Biomedical Ontologies, and the Disease and Phenotype track of the 2016 Ontology Alignment Evaluation Initiative campaign

Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

Energy Technology Data Exchange (ETDEWEB)

Zhdanov, E. Yu., E-mail: zhdanov@isp.nsc.ru; Pogosov, A. G.; Budantsev, M. V.; Pokhabov, D. A.; Bakarov, A. K. [Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

2017-01-15

The magnetoresistance of suspended semiconductor nanostructures with a two-dimensional electron gas structured by periodic square antidot lattices is studied. It is shown that the ballistic regime of electron transport is retained after detaching the sample from the substrate. Direct comparative analysis of commensurability oscillations of magnetoresistance and their temperature dependences in samples before and after suspension is performed. It is found that the temperature dependences are almost identical for non-suspended and suspended samples, whereas significant differences are observed in the nonlinear regime, caused by direct current passage. Commensurability oscillations in the suspended samples are more stable with respect to exposure to direct current, which can be presumably explained by electron–electron interaction enhancement after detaching nanostructures from the high-permittivity substrate.

Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

Science.gov (United States)

Tellekamp, M. Brooks; Shank, Joshua C.; Goorsky, Mark S.; Doolittle, W. Alan

2016-12-01

Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°), which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy.

Epitaxial films of YBa2Cu3O/sub 7-//sub δ/ on NdGaO3, LaGaO3, and SrTiO3 substrates deposited by laser ablation

International Nuclear Information System (INIS)

Koren, G.; Gupta, A.; Giess, E.A.; Segmueller, A.; Laibowitz, R.B.

1989-01-01

Frequency-doubled Nd:YAG laser (532 nm) pulses of 1.7 J/cm 2 and 10 ns duration were used to deposit thin films of YBa 2 Cu 3 O/sub 7-//sub δ/ by laser ablation on NdGaO 3 , LaGaO 3 , and SrTiO 3 substrates held at 725 +- 5 0 C in 0.2 Torr of O 2 ambient. Electrical resistivities versus temperature of all films show normal metallic behavior and sharp superconducting transitions with T/sub c/ (R = 0) at 92--93 K. Critical current densities in 0.3--0.6 μm thick, 200 μm long, and 10--30 μm wide strips were measured to be 10 6 A/cm 2 at 60, 77, and 80 K in the films on LaGaO 3 , NdGaO 3 , and SrTiO 3 , respectively. X-ray diffraction patterns show that all films grew epitaxially, with domains of only two crystalline orientations rotated 90 0 with respect to each other in the a-b plane (consistent with twins), and the c axis perpendicular to the substrates. The closely matched lattice constants of the film and substrates (0.8--2.1%) result in epitaxial growth of the films

X-cube model on generic lattices: Fracton phases and geometric order

Science.gov (United States)

Slagle, Kevin; Kim, Yong Baek

2018-04-01

Fracton order is a new kind of quantum order characterized by topological excitations that exhibit remarkable mobility restrictions and a robust ground-state degeneracy (GSD) which can increase exponentially with system size. In this paper, we present a generic lattice construction (in three dimensions) for a generalized X-cube model of fracton order, where the mobility restrictions of the subdimensional particles inherit the geometry of the lattice. This helps explain a previous result that lattice curvature can produce a robust GSD, even on a manifold with trivial topology. We provide explicit examples to show that the (zero-temperature) phase of matter is sensitive to the lattice geometry. In one example, the lattice geometry confines the dimension-1 particles to small loops, which allows the fractons to be fully mobile charges, and the resulting phase is equivalent to (3+1)-dimensional toric code. However, the phase is sensitive to more than just lattice curvature; different lattices without curvature (e.g., cubic or stacked kagome lattices) also result in different phases of matter, which are separated by phase transitions. Unintuitively, however, according to a previous definition of phase [X. Chen et al., Phys. Rev. B 82, 155138 (2010), 10.1103/PhysRevB.82.155138], even just a rotated or rescaled cubic results in different phases of matter, which motivates us to propose a coarser definition of phase for gapped ground states and fracton order. This equivalence relation between ground states is given by the composition of a local unitary transformation and a quasi-isometry (which can rotate and rescale the lattice); equivalently, ground states are in the same phase if they can be adiabatically connected by varying both the Hamiltonian and the positions of the degrees of freedom (via a quasi-isometry). In light of the importance of geometry, we further propose that fracton orders should be regarded as a geometric order.

Twisted mass lattice QCD

International Nuclear Information System (INIS)

Shindler, A.

2007-07-01

I review the theoretical foundations, properties as well as the simulation results obtained so far of a variant of the Wilson lattice QCD formulation: Wilson twisted mass lattice QCD. Emphasis is put on the discretization errors and on the effects of these discretization errors on the phase structure for Wilson-like fermions in the chiral limit. The possibility to use in lattice simulations different lattice actions for sea and valence quarks to ease the renormalization patterns of phenomenologically relevant local operators, is also discussed. (orig.)

Twisted mass lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Shindler, A. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

2007-07-15

I review the theoretical foundations, properties as well as the simulation results obtained so far of a variant of the Wilson lattice QCD formulation: Wilson twisted mass lattice QCD. Emphasis is put on the discretization errors and on the effects of these discretization errors on the phase structure for Wilson-like fermions in the chiral limit. The possibility to use in lattice simulations different lattice actions for sea and valence quarks to ease the renormalization patterns of phenomenologically relevant local operators, is also discussed. (orig.)

Lattice regularized chiral perturbation theory

International Nuclear Information System (INIS)

Borasoy, Bugra; Lewis, Randy; Ouimet, Pierre-Philippe A.

2004-01-01

Chiral perturbation theory can be defined and regularized on a spacetime lattice. A few motivations are discussed here, and an explicit lattice Lagrangian is reviewed. A particular aspect of the connection between lattice chiral perturbation theory and lattice QCD is explored through a study of the Wess-Zumino-Witten term

2D surface optical lattice formed by plasmon polaritons with application to nanometer-scale molecular deposition.

Science.gov (United States)

Yin, Yanning; Xu, Supeng; Li, Tao; Yin, Yaling; Xia, Yong; Yin, Jianping

2017-08-10

Surface plasmon polaritons, due to their tight spatial confinement and high local intensity, hold great promises in nanofabrication which is beyond the diffraction limit of conventional lithography. Here, we demonstrate theoretically the 2D surface optical lattices based on the surface plasmon polariton interference field, and the potential application to nanometer-scale molecular deposition. We present the different topologies of lattices generated by simple configurations on the substrate. By explicit theoretical derivations, we explain their formation and characteristics including field distribution, periodicity and phase dependence. We conclude that the topologies can not only possess a high stability, but also be dynamically manipulated via changing the polarization of the excitation laser. Nanometer-scale molecular deposition is simulated with these 2D lattices and discussed for improving the deposition resolution. The periodic lattice point with a width resolution of 33.2 nm can be obtained when the fullerene molecular beam is well-collimated. Our study can offer a superior alternative method to fabricate the spatially complicated 2D nanostructures, with the deposition array pitch serving as a reference standard for accurate and traceable metrology of the SI length standard.

Low Defect Density Substrates and High-Quality Epi-Substrate Interfaces for ABCS Devices and Progress Toward Phonon-Mediated THz Lasers

National Research Council Canada - National Science Library

Goodhue, William; Bliss, David; Krishnaswami, Kannan; Vangala, Shivashankar; Li, Jin; Zhu, Beihong

2005-01-01

... has been developing technology for producing low defect density substrates and high-quality epi-substrate interfaces for ABCS device applications as well as developing fabrication and device concepts...

Dynamics of a metal overlayer on metallic substrates: High temperature effects

International Nuclear Information System (INIS)

Rahman, T.S.; Black, J.E.; Tian, Zeng Ju

1992-01-01

We have explored the structure and the dynamics of a bimetallic system consisting of a hexagonal (almost) overlayer of Ag on a square lattice (Ni(100) and Cu(100)), as a function of the surface temperature. In each case the structure is ''nearly'' incommensurate giving rise to a low frequency Goldstone mode. Also, the overlayer atoms slosh back and forth over the substrate in a corrugated fashion. The calculated dispersion of the Ag/metal vertical mode, at room temperature, is in excellent agreement with experimental data. At higher temperatures floater atoms appear on top of the overlayer displaying a variety of cluster formations and also exchanges with the substrate atoms leading to surface disordering, interdiffusion and melting

An analysis of the nucleon spectrum from lattice partially-quenched QCD

Energy Technology Data Exchange (ETDEWEB)

Armour, W. [Swansea University, Swansea, SA2 8PP, Wales, U.K.; Allton, C. R. [Swansea University, Swansea, SA2 8PP, Wales, U.K.; Leinweber, Derek B. [Univ. of Adelaide, SA (Australia); Thomas, Anthony W. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Young, Ross D. [Argonne National Lab. (ANL), Argonne, IL (United States)

2010-09-01

The chiral extrapolation of the nucleon mass, Mn, is investigated using data coming from 2-flavour partially-quenched lattice simulations. The leading one-loop corrections to the nucleon mass are derived for partially-quenched QCD. A large sample of lattice results from the CP-PACS Collaboration is analysed, with explicit corrections for finite lattice spacing artifacts. The extrapolation is studied using finite range regularised chiral perturbation theory. The analysis also provides a quantitative estimate of the leading finite volume corrections. It is found that the discretisation, finite-volume and partial quenching effects can all be very well described in this framework, producing an extrapolated value of Mn in agreement with experiment. This procedure is also compared with extrapolations based on polynomial forms, where the results are less encouraging.

Structure of ultrathin Pd films determined by low-energy electron microscopy and diffraction

Energy Technology Data Exchange (ETDEWEB)

Santos, B; De la Figuera, J [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Puerta, J M; Cerda, J I [Instituto de Ciencia de Materiales, CSIC, Madrid 28049 (Spain); Herranz, T [Instituto de Quimica-Fisica ' Rocasolano' , CSIC, Madrid 28006 (Spain); McCarty, K F [Sandia National Laboratories, Livermore, CA 94550 (United States)], E-mail: benitosantos001@gmail.com

2010-02-15

Palladium (Pd) films have been grown and characterized in situ by low-energy electron diffraction (LEED) and microscopy in two different regimes: ultrathin films 2-6 monolayers (ML) thick on Ru(0001), and {approx}20 ML thick films on both Ru(0001) and W(110). The thinner films are grown at elevated temperature (750 K) and are lattice matched to the Ru(0001) substrate. The thicker films, deposited at room temperature and annealed to 880 K, have a relaxed in-plane lattice spacing. All the films present an fcc stacking sequence as determined by LEED intensity versus energy analysis. In all the films, there is hardly any expansion in the surface-layer interlayer spacing. Two types of twin-related stacking sequences of the Pd layers are found on each substrate. On W(110) the two fcc twin types can occur on a single substrate terrace. On Ru(0001) each substrate terrace has a single twin type and the twin boundaries replicate the substrate steps.

Combined measurement of surface, grain boundary and lattice diffusion coefficients on olivine bi-crystals

Science.gov (United States)

Marquardt, Katharina; Dohmen, Ralf; Wagner, Johannes

2014-05-01

Diffusion along interface and grain boundaries provides an efficient pathway and may control chemical transport in rocks as well as their mechanical strength. Besides the significant relevance of these diffusion processes for various geologic processes, experimental data are still very limited (e.g., Dohmen & Milke, 2010). Most of these data were measured using polycrystalline materials and the formalism of LeClaire (1951) to fit integrated concentration depth profiles. To correctly apply this formalism, certain boundary conditions of the diffusion problem need to be fulfilled, e.g., surface diffusion is ignored, and furthermore the lattice diffusion coefficient has to be known from other studies or is an additional fitting parameter, which produces some ambiguity in the derived grain boundary diffusion coefficients. We developed an experimental setup where we can measure the lattice and grain boundary diffusion coefficients simultaneously but independent and demonstrate the relevance of surface diffusion for typical grain boundary diffusion experiments. We performed Mg2SiO4 bicrystal diffusion experiments, where a single grain boundary is covered by a thin-film of pure Ni2SiO4 acting as diffusant source, produced by pulsed laser deposition. The investigated grain boundary is a 60° (011)/[100]. This specific grain boundary configuration was modeled using molecular dynamics for comparison with the experimental observations in the transmission electron microscope (TEM). Both, experiment and model are in good agreement regarding the misorientation, whereas there are still some disagreements regarding the strain fields along the grain boundary that are of outmost importance for the strengths of the material. The subsequent diffusion experiments were carried out in the temperature range between 800° and 1450° C. The inter diffusion profiles were measured using the TEMs energy dispersive x-ray spectrometer standardized using the Cliff-Lorimer equation and EMPA

Supersymmetric lattices

International Nuclear Information System (INIS)

Catterall, Simon

2013-01-01

Discretization of supersymmetric theories is an old problem in lattice field theory. It has resisted solution until quite recently when new ideas drawn from orbifold constructions and topological field theory have been brought to bear on the question. The result has been the creation of a new class of lattice gauge theory in which the lattice action is invariant under one or more supersymmetries. The resultant theories are local and free of doublers and in the case of Yang-Mills theories also possess exact gauge invariance. In principle they form the basis for a truly non-perturbative definition of the continuum supersymmetric field theory. In this talk these ideas are reviewed with particular emphasis being placed on N = 4 super Yang-Mills theory.

Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: nukaga@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 {sup 0}C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90{sup 0} each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

International Nuclear Information System (INIS)

Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

A lattice Boltzmann model for substrates with regularly structured surface roughness

Science.gov (United States)

Yagub, A.; Farhat, H.; Kondaraju, S.; Singh, T.

2015-11-01

Superhydrophobic surface characteristics are important in many industrial applications, ranging from the textile to the military. It was observed that surfaces fabricated with nano/micro roughness can manipulate the droplet contact angle, thus providing an opportunity to control the droplet wetting characteristics. The Shan and Chen (SC) lattice Boltzmann model (LBM) is a good numerical tool, which holds strong potentials to qualify for simulating droplets wettability. This is due to its realistic nature of droplet contact angle (CA) prediction on flat smooth surfaces. But SC-LBM was not able to replicate the CA on rough surfaces because it lacks a real representation of the physics at work under these conditions. By using a correction factor to influence the interfacial tension within the asperities, the physical forces acting on the droplet at its contact lines were mimicked. This approach allowed the model to replicate some experimentally confirmed Wenzel and Cassie wetting cases. Regular roughness structures with different spacing were used to validate the study using the classical Wenzel and Cassie equations. The present work highlights the strength and weakness of the SC model and attempts to qualitatively conform it to the fundamental physics, which causes a change in the droplet apparent contact angle, when placed on nano/micro structured surfaces.

Fabricating ordered functional nanostructures onto polycrystalline substrates from the bottom-up

International Nuclear Information System (INIS)

Torres, María; Pardo, Lorena; Ricote, Jesús; Fuentes-Cobas, Luís E.; Rodriguez, Brian J.; Calzada, M. Lourdes

2012-01-01

Microemulsion-mediated synthesis has emerged as a powerful bottom-up procedure for the preparation of ferroelectric nanostructures onto substrates. However, periodical order has yet to be achieved onto polycrystalline Pt-coated Si substrates. Here, we report a new methodology that involves microemulsion-mediated synthesis and the controlled modification of the surface of the substrate by coating it with a template-layer of water-micelles. This layer modifies the surface tension of the substrate and yields a periodic arrangement of ferroelectric crystalline nanostructures. The size of the nanostructures is decreased to the sub-50 nm range and they show a hexagonal order up to the third neighbors, which corresponds to a density of 275 Gb in −2 . The structural analysis of the nanostructures by synchrotron X-ray diffraction confirms that the nanostructures have a PbTiO 3 perovskite structure, with lattice parameters of a = b = 3.890(0) Å and c = 4.056(7) Å. Piezoresponse force microscopy confirmed the ferro-piezoelectric character of the nanostructures. This simple methodology is valid for the self-assembly of other functional oxides onto polycrystalline substrates, enabling their reliable integration into micro/nano devices.

Nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y films using ion beam channeling

International Nuclear Information System (INIS)

Nebiki, Takuya; Narusawa, Tadashi; Kumagai, Akiko; Doi, Hideyuki; Saito, Tadashi; Takagishi, Shigenori

2006-01-01

We have investigated the nitrogen lattice location in MOVPE grown Ga 1-x In x N y As 1-y with x=0.07 and y=0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1-x In x N y As 1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N(α,p) 17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ∼0.2 A from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms. (author)

Nature of interstitially induced lattice strains

International Nuclear Information System (INIS)

Emin, D.

1978-01-01

The addition of interstitial atoms to a metal lattice has been likened to the addition of extra billiard balls to an array of tangentially touching billiard balls. In such a picture the increased clustering of interstitials can lead to the buildup of larger and larger strain fields which ultimately are associated with the production of broken bonds. Simple models of the strain fields associated with the addition of particles to a lattice in which the force exerted between the added atoms and host atoms is finite have been studied. From these studies one can define situations in which the billiard-ball approach has qualitative validity and those in which it is inappropriate. Basically, those situations in which the displacements of the host atoms can be represented as involving acoustic phonons yield long-range strain fields analogous to those of the billiard-ball model with the radius of the extra billiard ball being determined by the stiffness of the host lattice and the forces between the added atom and the surrounding host atoms. If the displacements produced by the added atoms are represented as involving primarily optical phonons the displacement pattern is short-ranged and not described by the usual elasticity theory. For example, Vegard's law does not apply in these instances. Such concerns arise in considering the strains induced by interstitial helium in tritides

ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

2007-07-15

2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

Vortex lattices in layered superconductors

International Nuclear Information System (INIS)

Prokic, V.; Davidovic, D.; Dobrosavljevic-Grujic, L.

1995-01-01

We study vortex lattices in a superconductor--normal-metal superlattice in a parallel magnetic field. Distorted lattices, resulting from the shear deformations along the layers, are found to be unstable. Under field variation, nonequilibrium configurations undergo an infinite sequence of continuous transitions, typical for soft lattices. The equilibrium vortex arrangement is always a lattice of isocell triangles, without shear

Overlap valence quarks on a twisted mass sea. A case study for mixed action lattice QCD

International Nuclear Information System (INIS)

Cichy, Krzysztof; Herdoiza, Gregorio; UAM/CSIC Univ. Autonoma de Madrid

2012-11-01

We discuss a Lattice QCD mixed action investigation employing Wilson maximally twisted mass sea and overlap valence fermions. Using four values of the lattice spacing, we demonstrate that the overlap Dirac operator assumes a point-like locality in the continuum limit. We also show that by adopting suitable matching conditions for the sea and valence theories a consistent continuum limit for the pion decay constant and light baryon masses can be obtained. Finally, we confront results for sea-valence mixed meson masses and the valence scalar correlator with corresponding expressions of chiral perturbation theory. This allows us to extract low energy constants of mixed action chiral perturbation which characterize the strength of unitarity violations in our mixed action setup.

Overlap valence quarks on a twisted mass sea. A case study for mixed action lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Cichy, Krzysztof [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Poznan Univ. (Poland). Faculty of Physics; Drach, Vincent; Jansen, Karl [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Garcia-Ramos, Elena [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC; Humboldt-Universitaet, Berlin (Germany); Herdoiza, Gregorio [UAM/CSIC Univ. Autonoma de Madrid (Spain). Dept. de Fisica Teorica; UAM/CSIC Univ. Autonoma de Madrid (Spain). Inst. de Fisica Teorica; Collaboration: European Twisted Mass Collaboration

2012-11-15

We discuss a Lattice QCD mixed action investigation employing Wilson maximally twisted mass sea and overlap valence fermions. Using four values of the lattice spacing, we demonstrate that the overlap Dirac operator assumes a point-like locality in the continuum limit. We also show that by adopting suitable matching conditions for the sea and valence theories a consistent continuum limit for the pion decay constant and light baryon masses can be obtained. Finally, we confront results for sea-valence mixed meson masses and the valence scalar correlator with corresponding expressions of chiral perturbation theory. This allows us to extract low energy constants of mixed action chiral perturbation which characterize the strength of unitarity violations in our mixed action setup.

Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

Directory of Open Access Journals (Sweden)

Mauguin O.

2012-11-01

Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO3 thin films on MgO substrates

International Nuclear Information System (INIS)

Kim, Yongsam; Chen, Chunhua; Saiki, Atsushi; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

2002-01-01

Niobium (Nb) and strontium (Sr) doped barium titanate (BT) films were deposited by radio frequency (RF) magnetron sputtering with Nb and Sr doped BT ceramic targets, respectively. The effect of Nb and Sr doping on the crystal structure of epitaxial BaTiO 3 thin films on MgO substrates was investigated. The crystal structure of the films was examined using the reciprocal space mapping measurement. All the films exhibit a cube-on-cube relation with respect to the substrates. As the amount of doped Sr increased, both of the in-plane and out-of-plane lattice constants of Sr doped BT films slowly approached the BT bulk values. On the other hand, the lattice constants of Nb doped BT films were rapidly coming close to the bulk values. These indicated that the lattices of doped BT films were relaxed as the amount of doped elements increased. In addition, Nb doping had greater influence on the relaxation of the films than Sr doping for the same content of dopant. (author)

Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Riechert, Henning [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, Florian; Seyller, Thomas [Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz (Germany)

2016-07-28

The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

Reactor lattice codes

International Nuclear Information System (INIS)

Kulikowska, T.

1999-01-01

The present lecture has a main goal to show how the transport lattice calculations are realised in a standard computer code. This is illustrated on the example of the WIMSD code, belonging to the most popular tools for reactor calculations. Most of the approaches discussed here can be easily modified to any other lattice code. The description of the code assumes the basic knowledge of reactor lattice, on the level given in the lecture on 'Reactor lattice transport calculations'. For more advanced explanation of the WIMSD code the reader is directed to the detailed descriptions of the code cited in References. The discussion of the methods and models included in the code is followed by the generally used homogenisation procedure and several numerical examples of discrepancies in calculated multiplication factors based on different sources of library data. (author)

A photoemission study of Mn grown on GaAs(100)

International Nuclear Information System (INIS)

James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

2002-01-01

Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

Atomic and electronic structures of lattice mismatched Cu{sub 2}O/TiO{sub 2} interfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, Shuzhi [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Kavaipatti, Balasubramaniam; Ramesh, Ramamoorthy [Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720 (United States); Kim, Sung-Joo; Pan, Xiaoqing [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ager, Joel W.; Wang, Lin-Wang, E-mail: lwwang@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Joint Center of Artificial Photosynthesis, Berkeley, California 94720 (United States)

2014-05-26

Heterojunction interfaces between metal oxides are often highly lattice mismatched. The atomic and electronic structures of such interfaces, however, are not well understood. We have synthesized Cu{sub 2}O/TiO{sub 2} heterojunction thin films with 13% lattice mismatch and studied the interface via experimental methods and large-scale density function theory calculations of supercells containing ∼1300 atoms. We find that an interface of epitaxial quality is formed via a coincidence site lattice of 8 Cu{sub 2}O unit cells matching 9 TiO{sub 2} unit cells. Calculations reveal the existence of a dislocation core of the O sublattices at the interface and a random arrangement of one layer of interfacial Cu atoms. The interfacial electronic structure is found to be mostly determined by the interfacial Cu distribution, rather than by the O dislocation core. The conduction band minimum and valence band maximum states are spatially separated, and there is no strongly localized state near the core.

Preliminary Investigation on Turbulent Flow in Tight-lattice Rod Bundle with Twist-mixing Vane Spacer Grid

International Nuclear Information System (INIS)

Lee, Chiyoung; Kwack, Youngkyun; Park, Juyong; Shin, Changhwan; In, Wangkee

2013-01-01

Our research group has investigated the effect of P/D difference on the behavior of turbulent rod bundle flow without the mixing vane spacer grid, using PIV (Particle Image Velocimetry) and MIR (Matching Index of Refraction) techniques for tight lattice fuel rod bundle application. In this work, using the tight-lattice rod bundle with a twist-mixing vane spacer grid, the turbulent rod bundle flow is preliminarily examined to validate the PIV measurement and CFD (Computational Fluid Dynamics) simulation. The turbulent flow in the tight-lattice rod bundle with a twist-mixing vane spacer grid was preliminarily examined to validate the PIV measurement and CFD simulation. Both were in agreement with each other within a reasonable degree of accuracy. Using PIV measurement and CFD simulation tested in this work, the detailed investigations on the behavior of turbulent rod bundle flow with the twist-mixing vane spacer grid will be performed at various conditions, and reported in the near future

The origin of local strain in highly epitaxial oxide thin films.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

2013-10-31

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

International Nuclear Information System (INIS)

Butte, R; Carlin, J-F; Feltin, E; Gonschorek, M; Nicolay, S; Christmann, G; Simeonov, D; Castiglia, A; Dorsaz, J; Buehlmann, H J; Christopoulos, S; Hoegersthal, G Baldassarri Hoeger von; Grundy, A J D; Mosca, M; Pinquier, C; Py, M A; Demangeot, F; Frandon, J; Lagoudakis, P G; Baumberg, J J; Grandjean, N

2007-01-01

We report on the current properties of Al 1-x In x N (x ∼ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1-5) x 10 18 cm -3 and a large Stokes shift (∼800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm -1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two

Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

Science.gov (United States)

Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

2013-03-01

A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

Mode-matching strategies in slowly varying engine ducts

NARCIS (Netherlands)

Ovenden, N.C.; Rienstra, S.W.

2003-01-01

A matching method is proposed to connect the CFD source region to the CAA propagation region of rotorstator interaction sound produced in a turbofan engine. The method is based on a modal decomposition across three neighbouring axial interfaces adjacent to the matching interface. The modal

Design trade study for a 4-meter off-axis primary mirror substrate and mount for the Habitable-zone Exoplanet Direct Imaging Mission

Science.gov (United States)

Arnold, William R.; Stahl, H. Philip

2017-09-01

An extensive trade study was conducted to evaluate primary mirror substrate design architectures for the HabEx mission baseline 4-meter off-axis telescope. The study's purpose is not to produce a final design, but rather to established a design methodology for matching the mirror's properties (mass and stiffness) with the mission's optical performance specifications (static dynamic wavefront error, WFE). The study systematically compares the effect of proven design elements (closed-back vs open-back vs partial-back; meniscus vs flat back vs shaped back; etc.), which can be implemented with proven space mirror materials (ULE and Zerodur), on static and dynamic WFE. Additionally, the study compares static and dynamic WFE of each substrate point design integrated onto three and six point mounts.

Toward lattice fractional vector calculus

International Nuclear Information System (INIS)

Tarasov, Vasily E

2014-01-01

An analog of fractional vector calculus for physical lattice models is suggested. We use an approach based on the models of three-dimensional lattices with long-range inter-particle interactions. The lattice analogs of fractional partial derivatives are represented by kernels of lattice long-range interactions, where the Fourier series transformations of these kernels have a power-law form with respect to wave vector components. In the continuum limit, these lattice partial derivatives give derivatives of non-integer order with respect to coordinates. In the three-dimensional description of the non-local continuum, the fractional differential operators have the form of fractional partial derivatives of the Riesz type. As examples of the applications of the suggested lattice fractional vector calculus, we give lattice models with long-range interactions for the fractional Maxwell equations of non-local continuous media and for the fractional generalization of the Mindlin and Aifantis continuum models of gradient elasticity. (papers)

Toward lattice fractional vector calculus

Science.gov (United States)

Tarasov, Vasily E.

2014-09-01

An analog of fractional vector calculus for physical lattice models is suggested. We use an approach based on the models of three-dimensional lattices with long-range inter-particle interactions. The lattice analogs of fractional partial derivatives are represented by kernels of lattice long-range interactions, where the Fourier series transformations of these kernels have a power-law form with respect to wave vector components. In the continuum limit, these lattice partial derivatives give derivatives of non-integer order with respect to coordinates. In the three-dimensional description of the non-local continuum, the fractional differential operators have the form of fractional partial derivatives of the Riesz type. As examples of the applications of the suggested lattice fractional vector calculus, we give lattice models with long-range interactions for the fractional Maxwell equations of non-local continuous media and for the fractional generalization of the Mindlin and Aifantis continuum models of gradient elasticity.

Thermal casting of polymers in centrifuge for producing X-ray optics

Science.gov (United States)

Hill, Randy M [Livermore, CA; Decker, Todd A [Livermore, CA

2012-03-27

An optic is produced by the steps of placing a polymer inside a rotateable cylindrical chamber, the rotateable cylindrical chamber having an outside wall, rotating the cylindrical chamber, heating the rotating chamber forcing the polymer to the outside wall of the cylindrical chamber, allowing the rotateable cylindrical chamber to cool while rotating producing an optic substrate with a substrate surface, sizing the optic substrate, and coating the substrate surface of the optic substrate to produce the optic with an optic surface.

Lattice gas cellular automata and lattice Boltzmann models an introduction

CERN Document Server

Wolf-Gladrow, Dieter A

2000-01-01

Lattice-gas cellular automata (LGCA) and lattice Boltzmann models (LBM) are relatively new and promising methods for the numerical solution of nonlinear partial differential equations. The book provides an introduction for graduate students and researchers. Working knowledge of calculus is required and experience in PDEs and fluid dynamics is recommended. Some peculiarities of cellular automata are outlined in Chapter 2. The properties of various LGCA and special coding techniques are discussed in Chapter 3. Concepts from statistical mechanics (Chapter 4) provide the necessary theoretical background for LGCA and LBM. The properties of lattice Boltzmann models and a method for their construction are presented in Chapter 5.

Study of lattice strain evolution during biaxial deformation of stainless steel using a finite element and fast Fourier transform based multi-scale approach

International Nuclear Information System (INIS)

Upadhyay, M.V.; Van Petegem, S.; Panzner, T.; Lebensohn, R.A.; Van Swygenhoven, H.

2016-01-01

A multi-scale elastic-plastic finite element and fast Fourier transform based approach is proposed to study lattice strain evolution during uniaxial and biaxial loading of stainless steel cruciform shaped samples. At the macroscale, finite element simulations capture the complex coupling between applied forces in the arms and gauge stresses induced by the cruciform geometry. The predicted gauge stresses are used as macroscopic boundary conditions to drive a mesoscale elasto-viscoplastic fast Fourier transform model, from which lattice strains are calculated for particular grain families. The calculated lattice strain evolution matches well with experimental values from in-situ neutron diffraction measurements and demonstrates that the spread in lattice strain evolution between different grain families decreases with increasing biaxial stress ratio. During equibiaxial loading, the model reveals that the lattice strain evolution in all grain families, and not just the 311 grain family, is representative of the polycrystalline response. A detailed quantitative analysis of the 200 and 220 grain family reveals that the contribution of elastic and plastic anisotropy to the lattice strain evolution significantly depends on the applied stress ratio.

Novel polyhydroxyalkanoate copolymers produced in Pseudomonas putida by metagenomic polyhydroxyalkanoate synthases.

Science.gov (United States)

Cheng, Jiujun; Charles, Trevor C

2016-09-01

Bacterially produced biodegradable polyhydroxyalkanoates (PHAs) with versatile properties can be achieved using different PHA synthases (PhaCs). This work aims to expand the diversity of known PhaCs via functional metagenomics and demonstrates the use of these novel enzymes in PHA production. Complementation of a PHA synthesis-deficient Pseudomonas putida strain with a soil metagenomic cosmid library retrieved 27 clones expressing either class I, class II, or unclassified PHA synthases, and many did not have close sequence matches to known PhaCs. The composition of PHA produced by these clones was dependent on both the supplied growth substrates and the nature of the PHA synthase, with various combinations of short-chain-length (SCL) and medium-chain-length (MCL) PHA. These data demonstrate the ability to isolate diverse genes for PHA synthesis by functional metagenomics and their use for the production of a variety of PHA polymer and copolymer mixtures.

Matched-filtering generalized phase contrast using LCoS pico-projectors for beam-forming

OpenAIRE

Bañas, Andrew Rafael; Palima, Darwin; Glückstad, Jesper

2012-01-01

We report on a new beam-forming system for generating high intensity programmable optical spikes using so-called matched-filtering Generalized Phase Contrast (mGPC) applying two consumer handheld pico-projectors. Such a system presents a low-cost alternative for optical trapping and manipulation, optical lattices and other beam-shaping applications usually implemented with high-end spatial light modulators. Portable pico-projectors based on liquid crystal on silicon (LCoS) devices are used as...

Gauge theories on the lattice at N/sub c/ = infinity

International Nuclear Information System (INIS)

Cristofano, G.A.

1982-01-01

The thesis is devoted to the study of the physical properties of the SU(N/sub c/) Yang Mills theory on the lattice at N/sub c/ = infinity. Since the lattice approach provides a natural framework toward a better understanding of nonperturbative phenomena, like quark confinement, nonperturbative physical quantities, like the string tension and the glueball mass are studied. The first two chapters are introductory in nature. In chapters (3,4) the strong coupling expansion for the Euclidean SU(N/sub c/) lattice gauge theory at N/sub c/ = infinity to 16th and 12th order in β = 1/g 0 2 N/sub c/ for the free energy F and the string tension k respectively is performed. Estimates of the ratio √k/Λ/sub L/ and of the crossover point from strong to weak coupling for the string tension are made by matching the strong coupling series to the asymptotically free continuum theory. In chapter (5) the strong coupling expansion for the glueball mass m/sub g/ to the 8th order in β for the Euclidean SU(infinity) lattice gauge theory is performed. The ratio of the glueball mass m/sub g/ to the squareroot of the string tension √k for the SU(infinity) theory is estimated to be m/sub g//√k = 2.6 +/- 0.2. It is found that the ratio m/sub g//√k has a rather small dependence on N/sub c/ and appears to increase with the number of colors N/sub c/. In chapter (6) two-point Pade approximants for the one plaquette expectation value E/sub p/ for the SU(2) lattice gauge theory by using the known strong and weak coupling series for D/sub p/ is performed. Comparison with the correspondent Monte Carlo results is made, especially in the delicate transition region, at intermediate β = 4/g 0 2

Lattice degeneracies of geometric fermions

International Nuclear Information System (INIS)

Raszillier, H.

1983-05-01

We give the minimal numbers of degrees of freedom carried by geometric fermions on all lattices of maximal symmetries in d = 2, 3, and 4 dimensions. These numbers are lattice dependent, but in the (free) continuum limit, part of the degrees of freedom have to escape to infinity by a Wilson mechanism built in, and 2sup(d) survive for any lattice. On self-reciprocal lattices we compare the minimal numbers of degrees of freedom of geometric fermions with the minimal numbers of naive fermions on these lattices and argue that these numbers are equal. (orig.)

Lattice gauge theory using parallel processors

International Nuclear Information System (INIS)

Lee, T.D.; Chou, K.C.; Zichichi, A.

1987-01-01

The book's contents include: Lattice Gauge Theory Lectures: Introduction and Current Fermion Simulations; Monte Carlo Algorithms for Lattice Gauge Theory; Specialized Computers for Lattice Gauge Theory; Lattice Gauge Theory at Finite Temperature: A Monte Carlo Study; Computational Method - An Elementary Introduction to the Langevin Equation, Present Status of Numerical Quantum Chromodynamics; Random Lattice Field Theory; The GF11 Processor and Compiler; and The APE Computer and First Physics Results; Columbia Supercomputer Project: Parallel Supercomputer for Lattice QCD; Statistical and Systematic Errors in Numerical Simulations; Monte Carlo Simulation for LGT and Programming Techniques on the Columbia Supercomputer; Food for Thought: Five Lectures on Lattice Gauge Theory

Crystallographic study of grain refinement in aluminum alloys using the edge-to-edge matching model

International Nuclear Information System (INIS)

Zhang, M.-X.; Kelly, P.M.; Easton, M.A.; Taylor, J.A.

2005-01-01

The edge-to-edge matching model for describing the interfacial crystallographic characteristics between two phases that are related by reproducible orientation relationships has been applied to the typical grain refiners in aluminum alloys. Excellent atomic matching between Al 3 Ti nucleating substrates, known to be effective nucleation sites for primary Al, and the Al matrix in both close packed directions and close packed planes containing these directions have been identified. The crystallographic features of the grain refiner and the Al matrix are very consistent with the edge-to-edge matching model. For three other typical grain refiners for Al alloys, TiC (when a = 0.4328 nm), TiB 2 and AlB 2 , the matching only occurs between the close packed directions in both phases and between the second close packed plane of the Al matrix and the second close packed plane of the refiners. According to the model, it is predicted that Al 3 Ti is a more powerful nucleating substrate for Al alloy than TiC, TiB 2 and AlB 2 . This agrees with the previous experimental results. The present work shows that the edge-to-edge matching model has the potential to be a powerful tool in discovering new and more powerful grain refiners for Al alloys

Critical manifold of the kagome-lattice Potts model

International Nuclear Information System (INIS)

Jacobsen, Jesper Lykke; Scullard, Christian R

2012-01-01

Any two-dimensional infinite regular lattice G can be produced by tiling the plane with a finite subgraph B⊆G; we call B a basis of G. We introduce a two-parameter graph polynomial P B (q, v) that depends on B and its embedding in G. The algebraic curve P B (q, v) = 0 is shown to provide an approximation to the critical manifold of the q-state Potts model, with coupling v = e K − 1, defined on G. This curve predicts the phase diagram not only in the physical ferromagnetic regime (v > 0), but also in the antiferromagnetic (v B (q, v) = 0 provides the exact critical manifold in the limit of infinite B. Furthermore, for some lattices G—or for the Ising model (q = 2) on any G—the polynomial P B (q, v) factorizes for any choice of B: the zero set of the recurrent factor then provides the exact critical manifold. In this sense, the computation of P B (q, v) can be used to detect exact solvability of the Potts model on G. We illustrate the method for two choices of G: the square lattice, where the Potts model has been exactly solved, and the kagome lattice, where it has not. For the square lattice we correctly reproduce the known phase diagram, including the antiferromagnetic transition and the singularities in the Berker–Kadanoff phase at certain Beraha numbers. For the kagome lattice, taking the smallest basis with six edges we recover a well-known (but now refuted) conjecture of F Y Wu. Larger bases provide successive improvements on this formula, giving a natural extension of Wu’s approach. We perform large-scale numerical computations for comparison and find excellent agreement with the polynomial predictions. For v > 0 the accuracy of the predicted critical coupling v c is of the order 10 −4 or 10 −5 for the six-edge basis, and improves to 10 −6 or 10 −7 for the largest basis studied (with 36 edges). This article is part of ‘Lattice models and integrability’, a special issue of Journal of Physics A: Mathematical and Theoretical in honour of

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

International Nuclear Information System (INIS)

Yuan, Zaoshi; Shimamura, Kohei; Shimojo, Fuyuki; Nakano, Aiichiro

2013-01-01

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices

Lattice degeneracies of fermions

International Nuclear Information System (INIS)

Raszillier, H.

1983-10-01

We present a detailed description of the minimal degeneracies of geometric (Kaehler) fermions on all the lattices of maximal symmetries in n = 1, ..., 4 dimensions. We also determine the isolated orbits of the maximal symmetry groups, which are related to the minimal numbers of ''naive'' fermions on the reciprocals of these lattices. It turns out that on the self-reciprocal lattices the minimal numbers of naive fermions are equal to the minimal numbers of degrees of freedom of geometric fermions. The description we give relies on the close connection of the maximal lattice symmetry groups with (affine) Weyl groups of root systems of (semi-) simple Lie algebras. (orig.)

Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.

2013-01-01

ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted

Fabrication and characterization of surface barrier detector from commercial silicon substrate

International Nuclear Information System (INIS)

Costa, Fabio Eduardo da; Silva, Julio Batista Rodrigues da

2015-01-01

This work used 5 silicon substrates, n-type with resistivity between 500-20,000 Ω.cm, with 12 mm diameter and 1 mm thickness, from Wacker - Chemitronic, Germany. To produce the surface barrier detectors, the substrates were first cleaned, then, they were etched with HNO 3 solution. After this, a deposition of suitable materials on the crystal was made, to produce the desired population inversion of the crystal characteristics. The substrates received a 10 mm diameter gold contact in one of the surfaces and a 5 mm diameter aluminum in the other. The curves I x V and the energy spectra for 28 keV and 59 keV, for each of the produced detectors, were measured. From the 5 substrates, 4 of them resulted in detectors and one did not present even diode characteristics. The results showed that the procedures used are suitable to produce detectors with this type of silicon substrates. (author)

Geometry of lattice field theory

International Nuclear Information System (INIS)

Honan, T.J.

1986-01-01

Using some tools of algebraic topology, a general formalism for lattice field theory is presented. The lattice is taken to be a simplicial complex that is also a manifold and is referred to as a simplicial manifold. The fields on this lattice are cochains, that are called lattice forms to emphasize the connections with differential forms in the continuum. This connection provides a new bridge between lattice and continuum field theory. A metric can be put onto this simplicial manifold by assigning lengths to every link or I-simplex of the lattice. Regge calculus is a way of defining general relativity on this lattice. A geometric discussion of Regge calculus is presented. The Regge action, which is a discrete form of the Hilbert action, is derived from the Hilbert action using distribution valued forms. This is a new derivation that emphasizes the underlying geometry. Kramers-Wannier duality in statistical mechanics is discussed in this general setting. Nonlinear field theories, which include gauge theories and nonlinear sigma models are discussed in the continuum and then are put onto a lattice. The main new result here is the generalization to curved spacetime, which consists of making the theory compatible with Regge calculus

Adaptive matching of the iota ring linear optics for space charge compensation

Energy Technology Data Exchange (ETDEWEB)

Romanov, A. [Fermilab; Bruhwiler, D. L. [RadiaSoft, Boulder; Cook, N. [RadiaSoft, Boulder; Hall, C. [RadiaSoft, Boulder

2016-10-09

Many present and future accelerators must operate with high intensity beams when distortions induced by space charge forces are among major limiting factors. Betatron tune depression of above approximately 0.1 per cell leads to significant distortions of linear optics. Many aspects of machine operation depend on proper relations between lattice functions and phase advances, and can be i proved with proper treatment of space charge effects. We implement an adaptive algorithm for linear lattice re matching with full account of space charge in the linear approximation for the case of Fermilab’s IOTA ring. The method is based on a search for initial second moments that give closed solution and, at the same predefined set of goals for emittances, beta functions, dispersions and phase advances at and between points of interest. Iterative singular value decomposition based technique is used to search for optimum by varying wide array of model parameters

Representation theory of lattice current algebras

International Nuclear Information System (INIS)

Alekseev, A.Yu.; Eidgenoessische Technische Hochschule, Zurich; Faddeev, L.D.; Froehlich, L.D.; Schomerus, V.; Kyoto Univ.

1996-04-01

Lattice current algebras were introduced as a regularization of the left-and right moving degrees of freedom in the WZNW model. They provide examples of lattice theories with a local quantum symmetry U q (G). Their representation theory is studied in detail. In particular, we construct all irreducible representations along with a lattice analogue of the fusion product for representations of the lattice current algebra. It is shown that for an arbitrary number of lattice sites, the representation categories of the lattice current algebras agree with their continuum counterparts. (orig.)

Preparation and Characterization of High Temperature Superconductor Film Surfaces

Science.gov (United States)

1993-10-27

Lanthanum Strontium Copper Oxide (LSCO) was also tested as a normal metal overlayer because of its compatibility with the high deposition temperature for...fabricate YBCO/ISCO SEB junctions using a variety of step heights (110 nm - 330 nm) on Neodymium Gallate (NGO) substrates. NGO was chosen as a...substrate because of its excellent lattice match to YBCO and its lack of crystal twinning Twinning had been a drawback of Lanthanum Aluminate (LAO)- L

ISABELLE lattice

International Nuclear Information System (INIS)

Smith, L.

1975-01-01

An analysis is given of a number of variants of the basic lattice of the planned ISABELLE storage rings. The variants were formed by removing cells from the normal part of the lattice and juggling the lengths of magnets, cells, and insertions in order to maintain a rational relation of circumference to that of the AGS and approximately the same dispersion. Special insertions, correction windings, and the working line with nonlinear resonances are discussed

Development of Industrially Produced Composite Quench Heaters for the LHC Superconducting Lattice Magnets

CERN Document Server

Szeless, Balázs; Calvone, F

1996-01-01

The quench heaters are vital elements for the protection of the LHC superconducting lattice magnets in the case of resistive transitions of the conductor. The basic concept of magnet protection and technical solutions are briefly presented. The quench heater consists of partially copper clad stainless steel strips sandwiched in between electric insulating carrier foils with electrical and mechanical properties such as to withstand high voltages, low temperatures, pressures and ionizing radiation. Testing of some commercial available electric insulation foils, polyimide (PI), polyetheretherketon (PEEK) and polyarylate (PA) and combinations of adhesive systems which are suitable for industrial processing are described. Possible industrial methods for series production for some 80 km of these composite quench heaters are indicated.

Global analysis of all linear stable settings of a storage ring lattice

Directory of Open Access Journals (Sweden)

David S Robin

2008-02-01

Full Text Available The traditional process of designing and tuning the magnetic lattice of a particle storage ring lattice to produce certain desired properties is not straightforward. Often solutions are found through trial and error and it is not clear that the solutions are close to optimal. This can be a very unsatisfying process. In this paper we take a step back and look at the general stability limits of the lattice. We employ a technique we call GLASS (GLobal scan of All Stable Settings that allows us to rapidly scan and find all possible stable modes and then characterize their associated properties. In this paper we illustrate how the GLASS technique gives a global and comprehensive vision of the capabilities of the lattice. In a sense, GLASS functions as a lattice observatory clearly displaying all possibilities. The power of the GLASS technique is that it is fast and comprehensive. There is no fitting involved. It gives the lattice designer clear guidance as to where to look for interesting operational points. We demonstrate the technique by applying it to two existing storage ring lattices—the triple bend achromat of the Advanced Light Source and the double bend achromat of CAMD. We show that, using GLASS, we have uncovered many interesting and in some cases previously unknown stability regions.

Extraordinary epitaxial alignment of graphene islands on Au(111)

International Nuclear Information System (INIS)

Wofford, Joseph M; Dubon, Oscar D; Starodub, Elena; Nie Shu; Bartelt, Norman C; Thürmer, Konrad; McCarty, Kevin F; Walter, Andrew L; Bostwick, Aaron; Rotenberg, Eli

2012-01-01

Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30° rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films. (paper)

Introduction to lattice gauge theory

International Nuclear Information System (INIS)

Gupta, R.

1987-01-01

The lattice formulation of Quantum Field Theory (QFT) can be exploited in many ways. We can derive the lattice Feynman rules and carry out weak coupling perturbation expansions. The lattice then serves as a manifestly gauge invariant regularization scheme, albeit one that is more complicated than standard continuum schemes. Strong coupling expansions: these give us useful qualitative information, but unfortunately no hard numbers. The lattice theory is amenable to numerical simulations by which one calculates the long distance properties of a strongly interacting theory from first principles. The observables are measured as a function of the bare coupling g and a gauge invariant cut-off ≅ 1/α, where α is the lattice spacing. The continuum (physical) behavior is recovered in the limit α → 0, at which point the lattice artifacts go to zero. This is the more powerful use of lattice formulation, so in these lectures the author focuses on setting up the theory for the purpose of numerical simulations to get hard numbers. The numerical techniques used in Lattice Gauge Theories have their roots in statistical mechanics, so it is important to develop an intuition for the interconnection between quantum mechanics and statistical mechanics. This will be the emphasis of the first lecture. In the second lecture, the author reviews the essential ingredients of formulating QCD on the lattice and discusses scaling and the continuum limit. In the last lecture the author summarizes the status of some of the main results. He also mentions the bottlenecks and possible directions for research. 88 refs

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Frentrup, Martin, E-mail: frentrup@physik.tu-berlin.de; Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hatui, Nirupam; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

2013-12-07

In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

Basis reduction for layered lattices

NARCIS (Netherlands)

Torreão Dassen, Erwin

2011-01-01

We develop the theory of layered Euclidean spaces and layered lattices. We present algorithms to compute both Gram-Schmidt and reduced bases in this generalized setting. A layered lattice can be seen as lattices where certain directions have infinite weight. It can also be

Basis reduction for layered lattices

NARCIS (Netherlands)

E.L. Torreão Dassen (Erwin)

2011-01-01

htmlabstractWe develop the theory of layered Euclidean spaces and layered lattices. With this new theory certain problems that usually are solved by using classical lattices with a "weighting" gain a new, more natural form. Using the layered lattice basis reduction algorithms introduced here these

Commutativity of the source generation procedure and integrable semi-discretizations: the two-dimensional Leznov lattice

International Nuclear Information System (INIS)

Hu Juan; Yu Guofu; Tam, Hon-Wah

2012-01-01

The source generation procedure (SGP) is applied to a y-directional discrete version and an x-directional discrete version of the Leznov lattice. Consequently, a y-discrete Leznov lattice equation with self-consistent sources (y-discrete Leznov ESCS) and an x-discrete Leznov ESCS are presented. Also utilizing the SGP, a new type of Leznov lattice equation with self-consistent sources (new Leznov ESCS) is derived. It is interesting that the two semi-discrete Leznov ESCS produced constitute a y-discretization for the Leznov ESCS given by Wang et al (2007 J. Phys. A: Math. Theor. 40 12691) and an x-discretization for the new Leznov ESCS, respectively. This means that the commutativity of SGP and integrable semi-discretizations is valid for the two-dimensional Leznov lattice equation. (paper)

An analysis of the nucleon spectrum from lattice partially-quenched QCD.

Energy Technology Data Exchange (ETDEWEB)

Armour, W.; Allton, C. R.; Leinweber, D. B.; Thomas, A. W.; Young, R. D.; Physics; Swansea Univ.; Univ. of Adelaide; Coll. of William and Mary

2010-09-01

The chiral extrapolation of the nucleon mass, M{sub n}, is investigated using data coming from 2-flavour partially-quenched lattice simulations. A large sample of lattice results from the CP-PACS Collaboration is analysed using the leading one-loop corrections, with explicit corrections for finite lattice spacing artifacts. The extrapolation is studied using finite-range regularised chiral perturbation theory. The analysis also provides a quantitative estimate of the leading finite volume corrections. It is found that the discretisation, finite volume and partial quenching effects can all be very well described in this framework, producing an extrapolated value of Mn in agreement with experiment. Furthermore, determinations of the low energy constants of the nucleon mass's chiral expansion are in agreement with previous methods, but with significantly reduced errors. This procedure is also compared with extrapolations based on polynomial forms, where the results are less encouraging.

Unified chiral analysis of the vector meson spectrum from lattice QCD

Energy Technology Data Exchange (ETDEWEB)

Wes Armour; Chris Allton; Derek Leinweber; Anthony Thomas; Ross Young

2005-10-13

The chiral extrapolation of the vector meson mass calculated in partially-quenched lattice simulations is investigated. The leading one-loop corrections to the vector meson mass are derived for partially-quenched QCD. A large sample of lattice results from the CP-PACS Collaboration is analysed, with explicit corrections for finite lattice spacing artifacts. To incorporate the effect of the opening decay channel as the chiral limit is approached, the extrapolation is studied using a necessary phenomenological extension of chiral effective field theory. This chiral analysis also provides a quantitative estimate of the leading finite volume corrections. It is found that the discretisation, finite-volume and partial quenching effects can all be very well described in this framework, producing an extrapolated value of $M_\\rho$ in excellent agreement with experiment. This procedure is also compared with extrapolations based on polynomial forms, where the results are much less enlightening.

An analysis of the nucleon spectrum from lattice partially-quenched QCD

Energy Technology Data Exchange (ETDEWEB)

Armour, W. [Department of Physics, Swansea University, Swansea SA2 8PP, Wales (United Kingdom); Allton, C.R., E-mail: c.allton@swan.ac.u [Department of Physics, Swansea University, Swansea SA2 8PP, Wales (United Kingdom); Leinweber, D.B. [Special Research Centre for the Subatomic Structure of Matter (CSSM), School of Chemistry and Physics, University of Adelaide, 5005 (Australia); Thomas, A.W. [Jefferson Lab, 12000 Jefferson Ave., Newport News, VA 23606 (United States); College of William and Mary, Williamsburg, VA 23187 (United States); Young, R.D. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

2010-09-01

The chiral extrapolation of the nucleon mass, M{sub n}, is investigated using data coming from 2-flavour partially-quenched lattice simulations. A large sample of lattice results from the CP-PACS Collaboration is analysed using the leading one-loop corrections, with explicit corrections for finite lattice spacing artifacts. The extrapolation is studied using finite-range regularised chiral perturbation theory. The analysis also provides a quantitative estimate of the leading finite volume corrections. It is found that the discretisation, finite volume and partial quenching effects can all be very well described in this framework, producing an extrapolated value of M{sub n} in agreement with experiment. Furthermore, determinations of the low energy constants of the nucleon mass's chiral expansion are in agreement with previous methods, but with significantly reduced errors. This procedure is also compared with extrapolations based on polynomial forms, where the results are less encouraging.

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

International Nuclear Information System (INIS)

Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

2014-01-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

Additional Quadrupoles At Center Of Long Straights In The NSLS-II Lattice

International Nuclear Information System (INIS)

Lin, F.; Bengtsson, J.; Guo, W.; Krinsky, S.; Li, Y.; Yang, L.

2011-01-01

The NSLS-II storage ring lattice is comprised of 30 DBA cells arranged in 15 superperiods. There are 15 long straight sections (9.3m) for injection, RF and insertion devices and 15 shorter straights (6.6m) for insertion devices. In the baseline lattice, the short straights have small horizontal and vertical beta functions but the long straights have large horizontal beta function optimized for injection. In this paper, we explore the possibility of installing additional quadrupoles at the center of selected long straight sections in order to provide two low-beta source locations for undulators in the same straight. The required modification to the linear lattice is discussed as well as the preservation of adequate dynamic aperture required for good injection efficiency and adequate Touschek lifetime. This paper discusses the possibility of producing two low-beta source locations for optimum brightness of undulators in the long straights of NSLS-II lattice by installing additional quadrupoles at the center. The linear optics is optimized to satisfy the requirements of lattice function and properties. Nonlinear optimization for a lattice with working point at (37.16, 17.22) is performed. Considering the magnets misalignment errors and physical apertures, we calculate the frequency maps and plot the tune footprint. The results show that the modified high-low beta function lattice can achieve a modest dynamic aperture in this preliminary study. Further work will continue to expand the dynamic aperture to meet the requirement of good injection efficiency and sufficient Touschek lifetime.

Lattice-Based Revocable Certificateless Signature

Directory of Open Access Journals (Sweden)

Ying-Hao Hung

2017-10-01

Full Text Available Certificateless signatures (CLS are noticeable because they may resolve the key escrow problem in ID-based signatures and break away the management problem regarding certificate in conventional signatures. However, the security of the mostly previous CLS schemes relies on the difficulty of solving discrete logarithm or large integer factorization problems. These two problems would be solved by quantum computers in the future so that the signature schemes based on them will also become insecure. For post-quantum cryptography, lattice-based cryptography is significant due to its efficiency and security. However, no study on addressing the revocation problem in the existing lattice-based CLS schemes is presented. In this paper, we focus on the revocation issue and present the first revocable CLS (RCLS scheme over lattices. Based on the short integer solution (SIS assumption over lattices, the proposed lattice-based RCLS scheme is shown to be existential unforgeability against adaptive chosen message attacks. By performance analysis and comparisons, the proposed lattice-based RCLS scheme is better than the previously proposed lattice-based CLS scheme, in terms of private key size, signature length and the revocation mechanism.

Lattice Higgs models

International Nuclear Information System (INIS)

Jersak, J.

1986-01-01

This year has brought a sudden interest in lattice Higgs models. After five years of only modest activity we now have many new results obtained both by analytic and Monte Carlo methods. This talk is a review of the present state of lattice Higgs models with particular emphasis on the recent development

Nuclear lattice simulations

Directory of Open Access Journals (Sweden)

Epelbaum E.

2010-04-01

Full Text Available We review recent progress on nuclear lattice simulations using chiral effective field theory. We discuss lattice results for dilute neutron matter at next-to-leading order, three-body forces at next-to-next-toleading order, isospin-breaking and Coulomb effects, and the binding energy of light nuclei.

Structure formation in bis(terpyridine) derivative adlayers: molecule-substrate versus molecule-molecule interactions.

Science.gov (United States)

Hoster, Harry E; Roos, Matthias; Breitruck, Achim; Meier, Christoph; Tonigold, Katrin; Waldmann, Thomas; Ziener, Ulrich; Landfester, Katharina; Behm, R Jürgen

2007-11-06

The influence of the substrate and the deposition conditions-vapor deposition versus deposition from solution-on the structures formed upon self-assembly of deposited bis(terpyridine) derivative (2,4'-BTP) monolayers on different hexagonal substrates, including highly oriented pyrolytic graphite (HOPG), Au(111), and (111)-oriented Ag thin films, was investigated by high-resolution scanning tunneling microscopy and by model calculations of the intermolecular energies and the lateral corrugation of the substrate-adsorbate interaction. Similar quasi-quadratic network structures with almost the same lattice constants obtained on all substrates are essentially identical to the optimum configuration expected from an optimization of the adlayer structure with C-H...N-type bridging bonds as a structure-determining factor, which underlines a key role of the intermolecular interactions in adlayer order. Slight distortions from the optimum values to form commensurate adlayer structures on the metal substrates and the preferential orientation of the adlayer with respect to the substrate are attributed to the substrate-adsorbate interactions, specifically, the lateral corrugation in the substrate-adsorbate interaction upon lateral displacement and rotation of the adsorbed BTP molecules. The fact that similar adlayer structures are obtained on HOPG under ultrahigh vacuum conditions (solid|gas interface) and on HOPG in trichlorobenzene (solid|liquid interface) indicates that the intermolecular interactions are not severely affected by the solvent.

Microstructural and Wear Behavior Characterization of Porous Layers Produced by Pulsed Laser Irradiation in Glass-Ceramics Substrates.

Science.gov (United States)

Sola, Daniel; Conde, Ana; García, Iñaki; Gracia-Escosa, Elena; de Damborenea, Juan J; Peña, Jose I

2013-09-09

In this work, wear behavior and microstructural characterization of porous layers produced in glass-ceramic substrates by pulsed laser irradiation in the nanosecond range are studied under unidirectional sliding conditions against AISI316 and corundum counterbodies. Depending on the optical configuration of the laser beam and on the working parameters, the local temperature and pressure applied over the interaction zone can generate a porous glass-ceramic layer. Material transference from the ball to the porous glass-ceramic layer was observed in the wear tests carried out against the AISI316 ball counterface whereas, in the case of the corundum ball, the wear volume loss was concentrated in the porous layer. Wear rate and friction coefficient presented higher values than expected for dense glass-ceramics.

Microstructural and Wear Behavior Characterization of Porous Layers Produced by Pulsed Laser Irradiation in Glass-Ceramics Substrates

Directory of Open Access Journals (Sweden)

Jose I. Peña

2013-09-01

Full Text Available In this work, wear behavior and microstructural characterization of porous layers produced in glass-ceramic substrates by pulsed laser irradiation in the nanosecond range are studied under unidirectional sliding conditions against AISI316 and corundum counterbodies. Depending on the optical configuration of the laser beam and on the working parameters, the local temperature and pressure applied over the interaction zone can generate a porous glass-ceramic layer. Material transference from the ball to the porous glass-ceramic layer was observed in the wear tests carried out against the AISI316 ball counterface whereas, in the case of the corundum ball, the wear volume loss was concentrated in the porous layer. Wear rate and friction coefficient presented higher values than expected for dense glass-ceramics.

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

1 / n Expansion for the Number of Matchings on Regular Graphs and Monomer-Dimer Entropy

Science.gov (United States)

Pernici, Mario

2017-08-01

Using a 1 / n expansion, that is an expansion in descending powers of n, for the number of matchings in regular graphs with 2 n vertices, we study the monomer-dimer entropy for two classes of graphs. We study the difference between the extensive monomer-dimer entropy of a random r-regular graph G (bipartite or not) with 2 n vertices and the average extensive entropy of r-regular graphs with 2 n vertices, in the limit n → ∞. We find a series expansion for it in the numbers of cycles; with probability 1 it converges for dimer density p diverges as |ln(1-p)| for p → 1. In the case of regular lattices, we similarly expand the difference between the specific monomer-dimer entropy on a lattice and the one on the Bethe lattice; we write down its Taylor expansion in powers of p through the order 10, expressed in terms of the number of totally reducible walks which are not tree-like. We prove through order 6 that its expansion coefficients in powers of p are non-negative.

Computing the writhe on lattices

International Nuclear Information System (INIS)

Laing, C; Sumners, D W

2006-01-01

Given a polygonal closed curve on a lattice or space group, we describe a method for computing the writhe of the curve as the average of weighted projected writhing numbers of the polygon in a few directions. These directions are determined by the lattice geometry, the weights are determined by areas of regions on the unit 2-sphere, and the regions are formed by the tangent indicatrix to the polygonal curve. We give a new formula for the writhe of polygons on the face centred cubic lattice and prove that the writhe of polygons on the body centred cubic lattice, the hexagonal simple lattice, and the diamond space group is always a rational number, and discuss applications to ring polymers

TideGrapher: Visual Analytics of Tactical Situations for Rugby Matches

Directory of Open Access Journals (Sweden)

Yusuke Ishikawa

2018-03-01

Full Text Available Various attempts at exploiting information visualization for sports have recently been reported in the literature, although it is still challenging to analyze continuous ball matches. In this paper, we propose a novel visual analytics system, called TideGrapher, to track the transition of tactile situations in a rugby match. With a particular focus on the side position of the ball, we designed a dedicated spatial substrate based on the spatio-temporal trajectory of the ball and provided a set of basic interactions. Quantitative analysis was strengthened by adding a new index, called initiative, to commonly used possession (ball occupation and territory (dominance of territory. The feasibility of the proposed visual analytics system was proven empirically through application to datasets from real amateur and professional matches. Keywords: Information visualization, Sports visualization, Quantitative analysis, Visual analytics

Substrate and metabolite diffusion within model medium for soft cheese in relation to growth of Penicillium camembertii.

Science.gov (United States)

Aldarf, Mazen; Fourcade, Florence; Amrane, Abdeltif; Prigent, Yves

2006-08-01

Penicillium camembertii was cultivated on a jellified peptone-lactate based medium to simulate the composition of Camembert cheese. Diffusional limitations due to substrate consumption were not involved in the linear growth recorded during culture, while nitrogen (peptone) limitation accounted for growth cessation. Examination of gradients confirmed that medium neutralization was the consequence of lactate consumption and ammonium production. The diffusion of the lactate assimilated from the core to the rind and that of the ammonium produced from the rind to the core was described by means of a diffusion/reaction model involving a partial linking of consumption or production to growth. The model matched experimental data throughout growth.

Hyper-lattice algebraic model for data warehousing

CERN Document Server

Sen, Soumya; Chaki, Nabendu

2016-01-01

This book presents Hyper-lattice, a new algebraic model for partially ordered sets, and an alternative to lattice. The authors analyze some of the shortcomings of conventional lattice structure and propose a novel algebraic structure in the form of Hyper-lattice to overcome problems with lattice. They establish how Hyper-lattice supports dynamic insertion of elements in a partial order set with a partial hierarchy between the set members. The authors present the characteristics and the different properties, showing how propositions and lemmas formalize Hyper-lattice as a new algebraic structure.

An overview of lattice QCD

International Nuclear Information System (INIS)

Woloshyn, R.M.

1988-03-01

The basic concepts of the Lagrangian formulation of lattice field theory are discussed. The Wilson and staggered schemes for dealing with fermions on the lattice are described. Some recent results for hadron masses and vector and axial vector current matrix elements in lattice QCD are reviewed. (Author) (118 refs., 16 figs.)

Hadron structure from lattice QCD

International Nuclear Information System (INIS)

Schaefer, Andreas

2008-01-01

Some elements and current developments of lattice QCD are reviewed, with special emphasis on hadron structure observables. In principle, high precision experimental and lattice data provide nowadays a very detailled picture of the internal structure of hadrons. However, to relate both, a very good controle of perturbative QCD is needed in many cases. Finally chiral perturbation theory is extremely helpful to boost the precision of lattice calculations. The mutual need and benefit of all four elements: experiment, lattice QCD, perturbative QCD and chiral perturbation theory is the main topic of this review

Lattice formulations of reggeon interactions

International Nuclear Information System (INIS)

Brower, R.C.; Ellis, J.; Savit, R.; Zinn-Justin, J.

1976-01-01

A class of lattice analogues to reggeon field theory is examined. First the transition from a continuum to a lattice field theory is discussed, emphasizing the necessity of a Wick rotation and the consideration of symmetry properties. Next the theory is transformed to a discrete system with two spins at each lattice site, and the problems of the triple-reggeon interaction and the reggeon energy gap are discussed. It is pointed out that transferring the theory from the continuum to a lattice necesarily introduces new relevant operators not normally present in reggeon field theory. (Auth.)

Holographic Fabrication of Designed Functional Defect Lines in Photonic Crystal Lattice Using a Spatial Light Modulator

Directory of Open Access Journals (Sweden)

Jeffrey Lutkenhaus

2016-04-01

Full Text Available We report the holographic fabrication of designed defect lines in photonic crystal lattices through phase engineering using a spatial light modulator (SLM. The diffracted beams from the SLM not only carry the defect’s content but also the defect related phase-shifting information. The phase-shifting induced lattice shifting in photonic lattices around the defects in three-beam interference is less than the one produced by five-beam interference due to the alternating shifting in lattice in three beam interference. By designing the defect line at a 45 degree orientation and using three-beam interference, the defect orientation can be aligned with the background photonic lattice, and the shifting is only in one side of the defect line, in agreement with the theory. Finally, a new design for the integration of functional defect lines in a background phase pattern reduces the relative phase shift of the defect and utilizes the different diffraction efficiency between the defect line and background phase pattern. We demonstrate that the desired and functional defect lattice can be registered into the background lattice through the direct imaging of designed phase patterns.

Local Search Approaches in Stable Matching Problems

Directory of Open Access Journals (Sweden)

Toby Walsh

2013-10-01

Full Text Available The stable marriage (SM problem has a wide variety of practical applications, ranging from matching resident doctors to hospitals, to matching students to schools or, more generally, to any two-sided market. In the classical formulation, n men and n women express their preferences (via a strict total order over the members of the other sex. Solving an SM problem means finding a stable marriage where stability is an envy-free notion: no man and woman who are not married to each other would both prefer each other to their partners or to being single. We consider both the classical stable marriage problem and one of its useful variations (denoted SMTI (Stable Marriage with Ties and Incomplete lists where the men and women express their preferences in the form of an incomplete preference list with ties over a subset of the members of the other sex. Matchings are permitted only with people who appear in these preference lists, and we try to find a stable matching that marries as many people as possible. Whilst the SM problem is polynomial to solve, the SMTI problem is NP-hard. We propose to tackle both problems via a local search approach, which exploits properties of the problems to reduce the size of the neighborhood and to make local moves efficiently. We empirically evaluate our algorithm for SM problems by measuring its runtime behavior and its ability to sample the lattice of all possible stable marriages. We evaluate our algorithm for SMTI problems in terms of both its runtime behavior and its ability to find a maximum cardinality stable marriage. Experimental results suggest that for SM problems, the number of steps of our algorithm grows only as O(n log(n, and that it samples very well the set of all stable marriages. It is thus a fair and efficient approach to generate stable marriages. Furthermore, our approach for SMTI problems is able to solve large problems, quickly returning stable matchings of large and often optimal size, despite the

Irreversible stochastic processes on lattices

International Nuclear Information System (INIS)

Nord, R.S.

1986-01-01

Models for irreversible random or cooperative filling of lattices are required to describe many processes in chemistry and physics. Since the filling is assumed to be irreversible, even the stationary, saturation state is not in equilibrium. The kinetics and statistics of these processes are described by recasting the master equations in infinite hierarchical form. Solutions can be obtained by implementing various techniques: refinements in these solution techniques are presented. Programs considered include random dimer, trimer, and tetramer filling of 2D lattices, random dimer filling of a cubic lattice, competitive filling of two or more species, and the effect of a random distribution of inactive sites on the filling. Also considered is monomer filling of a linear lattice with nearest neighbor cooperative effects and solve for the exact cluster-size distribution for cluster sizes up to the asymptotic regime. Additionally, a technique is developed to directly determine the asymptotic properties of the cluster size distribution. Finally cluster growth is considered via irreversible aggregation involving random walkers. In particular, explicit results are provided for the large-lattice-size asymptotic behavior of trapping probabilities and average walk lengths for a single walker on a lattice with multiple traps. Procedures for exact calculation of these quantities on finite lattices are also developed

Background matching and camouflage efficiency predict population density in four-eyed turtle (Sacalia quadriocellata).

Science.gov (United States)

Xiao, Fanrong; Yang, Canchao; Shi, Haitao; Wang, Jichao; Sun, Liang; Lin, Liu

2016-10-01

Background matching is an important way to camouflage and is widespread among animals. In the field, however, few studies have addressed background matching, and there has been no reported camouflage efficiency in freshwater turtles. Background matching and camouflage efficiency of the four-eyed turtle, Sacalia quadriocellata, among three microhabitat sections of Hezonggou stream were investigated by measuring carapace components of CIE L*a*b* (International Commission on Illumination; lightness, red/green and yellow/blue) color space, and scoring camouflage efficiency through the use of humans as predators. The results showed that the color difference (ΔE), lightness difference (ΔL(*)), and chroma difference (Δa(*)b(*)) between carapace and the substrate background in midstream were significantly lower than that upstream and downstream, indicating that the four-eyed turtle carapace color most closely matched the substrate of midstream. In line with these findings, the camouflage efficiency was the best for the turtles that inhabit midstream. These results suggest that the four-eyed turtles may enhance camouflage efficiency by selecting microhabitat that best match their carapace color. This finding may explain the high population density of the four-eyed turtle in the midstream section of Hezonggou stream. To the best of our knowledge, this study is among the first to quantify camouflage of freshwater turtles in the wild, laying the groundwork to further study the function and mechanisms of turtle camouflage. Copyright © 2016. Published by Elsevier B.V.

Non-Abelian vortex lattices

Science.gov (United States)

Tallarita, Gianni; Peterson, Adam

2018-04-01

We perform a numerical study of the phase diagram of the model proposed in [M. Shifman, Phys. Rev. D 87, 025025 (2013)., 10.1103/PhysRevD.87.025025], which is a simple model containing non-Abelian vortices. As per the case of Abrikosov vortices, we map out a region of parameter space in which the system prefers the formation of vortices in ordered lattice structures. These are generalizations of Abrikosov vortex lattices with extra orientational moduli in the vortex cores. At sufficiently large lattice spacing the low energy theory is described by a sum of C P (1 ) theories, each located on a vortex site. As the lattice spacing becomes smaller, when the self-interaction of the orientational field becomes relevant, only an overall rotation in internal space survives.

A two-dimensional lattice equation as an extension of the Heideman-Hogan recurrence

Science.gov (United States)

Kamiya, Ryo; Kanki, Masataka; Mase, Takafumi; Tokihiro, Tetsuji

2018-03-01

We consider a two dimensional extension of the so-called linearizable mappings. In particular, we start from the Heideman-Hogan recurrence, which is known as one of the linearizable Somos-like recurrences, and introduce one of its two dimensional extensions. The two dimensional lattice equation we present is linearizable in both directions, and has the Laurent and the coprimeness properties. Moreover, its reduction produces a generalized family of the Heideman-Hogan recurrence. Higher order examples of two dimensional linearizable lattice equations related to the Dana Scott recurrence are also discussed.

Architected Lattices with High Stiffness and Toughness via Multicore-Shell 3D Printing.

Science.gov (United States)

Mueller, Jochen; Raney, Jordan R; Shea, Kristina; Lewis, Jennifer A

2018-03-01

The ability to create architected materials that possess both high stiffness and toughness remains an elusive goal, since these properties are often mutually exclusive. Natural materials, such as bone, overcome such limitations by combining different toughening mechanisms across multiple length scales. Here, a new method for creating architected lattices composed of core-shell struts that are both stiff and tough is reported. Specifically, these lattices contain orthotropic struts with flexible epoxy core-brittle epoxy shell motifs in the absence and presence of an elastomeric silicone interfacial layer, which are fabricated by a multicore-shell, 3D printing technique. It is found that architected lattices produced with a flexible core-elastomeric interface-brittle shell motif exhibit both high stiffness and toughness. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solar cells with low cost substrates, process of making same and article of manufacture

Science.gov (United States)

Mitchell, K.W.

A solar cell is disclosed having a substrate and an intermediate recrystallized film and a semiconductor material capable of absorbing light with the substrate being selected from one of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron/sup 2/. The intermediate recrystallized film has a grain size in the range of from about 10 microns/sup 2/ to about 10,000 microns/sup 2/ and a lattice mismatch with the semiconductor material not greater than about 4%. The semiconductor material has a grain size not less than about 10 microns/sup 2/. An anti-reflective layer and electrical contact means are provided. Also disclosed is a subcombination of substrate, intermediate recrystallized film and semiconductor material. Also, methods of formulating the solar cell and subcombination are disclosed.

Superspace approach to lattice supersymmetry

International Nuclear Information System (INIS)

Kostelecky, V.A.; Rabin, J.M.

1984-01-01

We construct a cubic lattice of discrete points in superspace, as well as a discrete subgroup of the supersymmetry group which maps this ''superlattice'' into itself. We discuss the connection between this structure and previous versions of lattice supersymmetry. Our approach clarifies the mathematical problems of formulating supersymmetric lattice field theories and suggests new methods for attacking them

Microstructural studies of La10.7Ca0.3MnO3 (LCMO) films on different (110) substrates deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Tse, Y Y; Jones, I P; Chakalov, R I; Muirhead, C M; Palai, R; Huhtinen, H

2008-01-01

La 0.7 Ca 0.3 MnO 3 (LCMO) films grown on (110) surfaces of various (pseudo-) cubic substrates, SrTiO 3 (STO), LaAlO 3 (LAO) and La 0.3 Sr 0.7 Al 0.5 Ta 0.35 O 3 (LSAT), were studied by means of transmission electron microscopy (TEM). (110) LSAT substrate and LCMO film have the smallest lattice mismatch. (110) LAO substrate induces compressive strain while (110) STO induces tensile strain in the LCMO film. In all cases, the (010) 0 plane (long axis) of LCMO is parallel to the substrate surface. In the case of LSAT, the [001] 0 is parallel to [011] LSAT while the films on the other 2 substrates have [100] 0 // to the [011] substrates. Films grown on STO and LAO show an easy magnetisation when the applied magnetic field is in plane along the long-axis of the LCMO. In the case of LSAT, there is no in-plane anisotropy. The films on STO and LAO have twins as the dominant defects. The film on LSAT has less twining. High resolution TEM shows that LCMO on (110) LSAT (the least lattice mismatch) possesses a perfect interface with no misfit dislocations in the area of examination. The LCMO films on (110) LAO and (110) STO have nearly perfect interfaces with atomic sharpness but with misfit dislocations. The different in-plane crystal directions and strain distributions in the films may account for the different magnetisation behaviours of the LCMO films on the different (011) substrates.

Atomic scattering from an adsorbed monolayer solid with a helium beam that penetrates to the substrate

DEFF Research Database (Denmark)

Hansen, Flemming Yssing; Bruch, L.W.; Dammann, Bernd

2013-01-01

Diffraction and one-phonon inelastic scattering of a thermal energy helium atomic beam are evaluated in the situation that the target monolayer lattice is so dilated that the atomic beam penetrates to the interlayer region between the monolayer and the substrate. The scattering is simulated......(1 × 1) commensurate monolayer solid of H2/KCl(001). For the latter, there are cases where part of the incident beam is trapped in the interlayer region for times exceeding 50 ps, depending on the spacing between the monolayer and the substrate and on the angle of incidence. The feedback effect...

Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

Energy Technology Data Exchange (ETDEWEB)

Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

2017-10-15

This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

Silvering substrates after CO2 snow cleaning

Science.gov (United States)

Zito, Richard R.

2005-09-01

There have been some questions in the astronomical community concerning the quality of silver coatings deposited on substrates that have been cleaned with carbon dioxide snow. These questions center around the possible existence of carbonate ions left behind on the substrate by CO2. Such carbonate ions could react with deposited silver to produce insoluble silver carbonate, thereby reducing film adhesion and reflectivity. Carbonate ions could be produced from CO2 via the following mechanism. First, during CO2 snow cleaning, a small amount of moisture can condense on a surface. This is especially true if the jet of CO2 is allowed to dwell on one spot. CO2 gas can dissolve in this moisture, producing carbonic acid, which can undergo two acid dissociations to form carbonate ions. In reality, it is highly unlikely that charged carbonate ions will remain stable on a substrate for very long. As condensed water evaporates, Le Chatelier's principle will shift the equilibrium of the chain of reactions that produced carbonate back to CO2 gas. Furthermore, the hydration of CO2 reaction of CO2 with H20) is an extremely slow process, and the total dehydrogenation of carbonic acid is not favored. Living tissues that must carry out the equilibration of carbonic acid and CO2 use the enzyme carbonic anhydrase to speed up the reaction by a factor of one million. But no such enzymatic action is present on a clean mirror substrate. In short, the worst case analysis presented below shows that the ratio of silver atoms to carbonate radicals must be at least 500 million to one. The results of chemical tests presented here support this view. Furthermore, film lift-off tests, also presented in this report, show that silver film adhesion to fused silica substrates is actually enhanced by CO2 snow cleaning.

Dynamical lattice theory

International Nuclear Information System (INIS)

Chodos, A.

1978-01-01

A version of lattice gauge theory is presented in which the shape of the lattice is not assumed at the outset but is a consequence of the dynamics. Other related features which are not specified a priori include the internal and space-time symmetry groups and the dimensionality of space-time. The theory possesses a much larger invariance group than the usual gauge group on a lattice, and has associated with it an integer k 0 analogous to the topological quantum numer of quantum chromodynamics. Families of semiclassical solutions are found which are labeled by k 0 and a second integer x, but the analysis is not carried far enough to determine which space-time and internal symmetry groups characterize the lowest-lying states of the theory

NONLINEAR ACCELERATOR LATTICES WITH ONE AND TWO ANALYTIC INVARIANTS

International Nuclear Information System (INIS)

Danilov, Viatcheslav V.

2010-01-01

Integrable systems appeared in physics long ago at the onset of classical dynamics with examples being Kepler s and other famous problems. Unfortunately, the majority of nonlinear problems turned out to be nonintegrable. In accelerator terms, any 2D nonlinear map produces a chaotic motion and a complex network of stable and unstable resonances with the unit probability. Nevertheless, in the proximity of an integrable system the full volume of such a chaotic network is small. Thus, the integrable nonlinear motion in accelerators has the potential to introduce a large betatron tune spread to suppress instabilities and to mitigate space charge effects with relatively small resonances and particle loss. To create such an accelerator lattice one has to find magnetic and electrtic field combinations leading to a stable integrable motion. This paper presents families of lattices with one invariant where bounded motion can be easily created in large volumes of the phase space. In addition, it presents 3 families of integrable nonlinear accelerator lattices, relizable with longitudinal-coordinate-dependent magnetic or electric fields with the stable nonlinear motion, which can be solved in terms of separable variables.

Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

Lattice design of medium energy beam transport line for n spallation neutron source

International Nuclear Information System (INIS)

Dhingra, Rinky; Kulkarni, Nita S.; Kumar, Vinit

2015-01-01

A 1 GeV H - injector linac is being designed at RRCAT for the proposed Indian Spallation Neutron Source (ISNS). The front-end of the injector linac will consist of Radiofrequency Quadrupole (RFQ) linac, which will accelerate the H - beam from 50 keV to 3 MeV. The beam will be further accelerated in superconducting Single Spoke Resonators (SSRs). A Medium Energy Beam Transport (MEBT) line will be used to transport the beam from the exit of RFQ to the input of SSR. The main purpose of MEBT is to carry out beam matching from RFQ to SSR, and beam chopping. In this paper, we describe the optimization criteria for the lattice design of MEBT. The optimized lattice element parameters are presented for zero and full (15 mA) current case. Beam dynamics studies have been carried out using an envelope tracing code Trace-3D. Required beam deflection angle due to the chopper housed inside the MEBT for beam chopping has also been estimated. (author)

Direct dry transfer of CVD graphene to an optical substrate by in situ photo-polymerization

Science.gov (United States)

Kessler, Felipe; Muñoz, Pablo A. R.; Phelan, Ciaran; Romani, Eric C.; Larrudé, Dunieskys R. G.; Freire, Fernando L.; Thoroh de Souza, Eunézio A.; de Matos, Christiano J. S.; Fechine, Guilhermino J. M.

2018-05-01

Here, we report on a method that allows graphene produced by chemical vapor deposition (CVD) to be directly transferred to an optically transparent photo resin, by in situ photo-polymerization of the latter, with high efficiency and low contamination. Two photocurable resins, A and B, with different viscosities but essentially the same chemical structure, were used. Raman spectroscopy and surface energy results show that large continuous areas of graphene were transferred with minimal defects to the lower viscosity resin (B), due to the better contact between the resin and graphene. As a proof-of-principle optical experiment, graphene on the polymeric substrate was subjected to high-intensity femtosecond infrared pulses and third-harmonic generation was observed with no noticeable degradation of the sample. A sheet third-order susceptibility χ (3) = 0.71 ×10-28m3V-2 was obtained, matching that of graphene on a glass substrate. These results indicate the suitability of the proposed transfer method, and of the photo resin, for the production of nonlinear photonic components and devices.

Computing nucleon EDM on a lattice

Science.gov (United States)

Abramczyk, Michael; Aoki, Sinya; Blum, Tom; Izubuchi, Taku; Ohki, Hiroshi; Syritsyn, Sergey

2018-03-01

I will discuss briefly recent changes in the methodology of computing the baryon EDM on a lattice. The associated correction substantially reduces presently existing lattice values for the proton and neutron theta-induced EDMs, so that even the most precise previous lattice results become consistent with zero. On one hand, this change removes previous disagreements between these lattice results and the phenomenological estimates of the nucleon EDM. On the other hand, the nucleon EDM becomes much harder to compute on a lattice. In addition, I will review the progress in computing quark chromo-EDM-induced nucleon EDM using chiral quark action.

Computing nucleon EDM on a lattice

Energy Technology Data Exchange (ETDEWEB)

Abramczyk, Michael; Izubuchi, Taku

2017-06-18

I will discuss briefly recent changes in the methodology of computing the baryon EDM on a lattice. The associated correction substantially reduces presently existing lattice values for the proton and neutron theta-induced EDMs, so that even the most precise previous lattice results become consistent with zero. On one hand, this change removes previous disagreements between these lattice results and the phenomenological estimates of the nucleon EDM. On the other hand, the nucleon EDM becomes much harder to compute on a lattice. In addition, I will review the progress in computing quark chromo-EDM-induced nucleon EDM using chiral quark action.

Cold collisions in dissipative optical lattices

International Nuclear Information System (INIS)

Piilo, J; Suominen, K-A

2005-01-01

The invention of laser cooling methods for neutral atoms allows optical and magnetic trapping of cold atomic clouds in the temperature regime below 1 mK. In the past, light-assisted cold collisions between laser cooled atoms have been widely studied in magneto-optical atom traps (MOTs). We describe here theoretical studies of dynamical interactions, specifically cold collisions, between atoms trapped in near-resonant, dissipative optical lattices. The extension of collision studies to the regime of optical lattices introduces several complicating factors. For the lattice studies, one has to account for the internal substates of atoms, position-dependent matter-light coupling, and position-dependent couplings between the atoms, in addition to the spontaneous decay of electronically excited atomic states. The developed one-dimensional quantum-mechanical model combines atomic cooling and collision dynamics in a single framework. The model is based on Monte Carlo wavefunction simulations and is applied when the lattice-creating lasers have frequencies both below (red-detuned lattice) and above (blue-detuned lattice) the atomic resonance frequency. It turns out that the radiative heating mechanism affects the dynamics of atomic cloud in a red-detuned lattice in a way that is not directly expected from the MOT studies. The optical lattice and position-dependent light-matter coupling introduces selectivity of collision partners. The atoms which are most mobile and energetic are strongly favoured to participate in collisions, and are more often ejected from the lattice, than the slow ones in the laser parameter region selected for study. Consequently, the atoms remaining in the lattice have a smaller average kinetic energy per atom than in the case of non-interacting atoms. For blue-detuned lattices, we study how optical shielding emerges as a natural part of the lattice and look for ways to optimize the effect. We find that the cooling and shielding dynamics do not mix

Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Li, K.L., E-mail: klli2010@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Sun, Y.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, J.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); He, Y.; Zeng, X.L. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

2015-10-30

High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10{sup 6} cm{sup −2} and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga{sub 1−x}In{sub x}P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In{sub 0.3}Ga{sub 0.7}As layers were obtained.

Thick vortices in SU(2) lattice gauge theory

OpenAIRE

Cheluvaraja, Srinath

2004-01-01

Three dimensional SU(2) lattice gauge theory is studied after eliminating thin monopoles and the smallest thick monopoles. Kinematically this constraint allows the formation of thick vortex loops which produce Z(2) fluctuations at longer length scales. The thick vortex loops are identified in a three dimensional simulation. A condensate of thick vortices persists even after the thin vortices have all disappeared. The thick vortices decouple at a slightly lower temperature (higher beta) than t...

Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

2014-01-01

High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

Automated lattice perturbation theory in the Schroedinger functional. Implementation and applications in HQET

International Nuclear Information System (INIS)

Hesse, Dirk

2012-01-01

The author developed the pastor software package for automated lattice perturbation theory calculations in the Schroedinger functional scheme. The pastor code consists of two building blocks, dealing with the generation of Feynman rules and Feynman diagrams respectively. Accepting a rather generic class of lattice gauge and fermion actions, passed to the code in a symbolic form as input, a low level part of pastor will generate Feynman rules to an arbitrary order in the bare coupling with a trivial or an Abelian background field. The second, high level part of pastor is a code generator whose output relies on the vertex generator. It writes programs that evaluate Feynman diagrams for a class of Schroedinger functional observables up to one loop order automatically, the relevant O(a) improvement terms are taken into account. We will describe the algorithms used for implementation of both parts of the code in detail, and provide cross checks with perturbative and non-perturbative data to demonstrate the correctness of our code. We demonstrate the usefulness of the pastor package through various applications taken from the matching process of heavy quark effective theory with quantum chromodynamics. We have e.g. completed a one loop analysis for new candidates for matching observables timely and with rather small effort, highlighting two advantages of an automated software setup. The results that were obtained so far will be useful as a guideline for further non-perturbative studies.

Automated lattice perturbation theory in the Schroedinger functional. Implementation and applications in HQET

Energy Technology Data Exchange (ETDEWEB)

Hesse, Dirk

2012-07-13

The author developed the pastor software package for automated lattice perturbation theory calculations in the Schroedinger functional scheme. The pastor code consists of two building blocks, dealing with the generation of Feynman rules and Feynman diagrams respectively. Accepting a rather generic class of lattice gauge and fermion actions, passed to the code in a symbolic form as input, a low level part of pastor will generate Feynman rules to an arbitrary order in the bare coupling with a trivial or an Abelian background field. The second, high level part of pastor is a code generator whose output relies on the vertex generator. It writes programs that evaluate Feynman diagrams for a class of Schroedinger functional observables up to one loop order automatically, the relevant O(a) improvement terms are taken into account. We will describe the algorithms used for implementation of both parts of the code in detail, and provide cross checks with perturbative and non-perturbative data to demonstrate the correctness of our code. We demonstrate the usefulness of the pastor package through various applications taken from the matching process of heavy quark effective theory with quantum chromodynamics. We have e.g. completed a one loop analysis for new candidates for matching observables timely and with rather small effort, highlighting two advantages of an automated software setup. The results that were obtained so far will be useful as a guideline for further non-perturbative studies.

One-dimensional transient radiative transfer by lattice Boltzmann method.

Science.gov (United States)

Zhang, Yong; Yi, Hongliang; Tan, Heping

2013-10-21

The lattice Boltzmann method (LBM) is extended to solve transient radiative transfer in one-dimensional slab containing scattering media subjected to a collimated short laser irradiation. By using a fully implicit backward differencing scheme to discretize the transient term in the radiative transfer equation, a new type of lattice structure is devised. The accuracy and computational efficiency of this algorithm are examined firstly. Afterwards, effects of the medium properties such as the extinction coefficient, the scattering albedo and the anisotropy factor, and the shapes of laser pulse on time-resolved signals of transmittance and reflectance are investigated. Results of the present method are found to compare very well with the data from the literature. For an oblique incidence, the LBM results in this paper are compared with those by Monte Carlo method generated by ourselves. In addition, transient radiative transfer in a two-Layer inhomogeneous media subjected to a short square pulse irradiation is investigated. At last, the LBM is further extended to study the transient radiative transfer in homogeneous medium with a refractive index discontinuity irradiated by the short pulse laser. Several trends on the time-resolved signals different from those for refractive index of 1 (i.e. refractive-index-matched boundary) are observed and analysed.

Topological magnon bands in ferromagnetic star lattice

International Nuclear Information System (INIS)

Owerre, S A

2017-01-01

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

Topological magnon bands in ferromagnetic star lattice.

Science.gov (United States)

Owerre, S A

2017-05-10

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.