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Sample records for praseodymium doped gallium

  1. Luminescent characteristics of praseodymium-doped zinc aluminate powders

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Perez, C.D.; Garcia-Hipolito, M.; Alvarez-Fregoso, O. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Coyoacan, DF (Mexico); Alvarez-Perez, M.A. [Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, Coyoacan, DF (Mexico); Ramos-Brito, F. [Laboratorio de Materiales Optoelectronicos, DIDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, Culiacan, Sinaloa (Mexico); Falcony, C. [Centro de Investigaciones y Estudios Avanzados del IPN, Departamento de Fisica, Mexico, DF (Mexico)

    2010-02-15

    In this research, we report the cathodoluminescence (CL) and preliminary photoluminescence (PL) properties of praseodymium-doped zinc aluminate powders. ZnAl{sub 2}O{sub 4}:Pr powders were synthesized by a very simple chemical process. X-ray diffraction spectra indicated a cubic spinel crystalline structure with an average crystallite size of 15 nm. CL properties of the powders were studied as a function of the praseodymium concentration and electron-accelerating potential. In this case, all the cathodoluminescent emission spectra showed main peaks located at 494, 535, 611, 646, and 733 nm, which were associated to the electronic transitions {sup 3}P{sub 0}{yields}{sup 3}H{sub 4}, {sup 3}P{sub 0}{yields}{sup 3}H{sub 5}, {sup 3}P{sub 0}{yields}{sup 3}H{sub 6}, {sup 3}P{sub 0}{yields}{sup 3}F{sub 2}, and {sup 3}P{sub 0}{yields}{sup 3}F{sub 4} of the Pr{sup 3+} ions, respectively. A quenching of the CL, with increasing doping concentration, was observed. Also, an increment on cathodoluminescent emission intensity was observed as the accelerating voltage increased. The PL emission spectrum showed similar characteristics to those of the CL spectra. The chemical composition of the powders, as determined by energy dispersive spectroscopy, is also reported. In addition, the surface morphology characteristics of the powders are shown. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. High field magnetic anisotropy in praseodymium gallium garnet at low temperatures

    International Nuclear Information System (INIS)

    Wang Wei; Yue Yuan; Liu Gongqiang

    2011-01-01

    Research highlights: → A detailed analysis of crystal field effect is presented, and a set of new crystal field parameters is given to study the magnetic behaviors of the paramagnetic praseodymium gallium garnet (PrGaG). → The contribution of the exchange interaction between the praseodymium ions to the magnetic properties of PrGaG is further explored. Meanwhile, some characteristics of exchange interaction are revealed. → With the consideration of crystal field and exchange interaction, the available experiments are successfully fitted by our theoretical model. → Our theory suggests that PrGaG is ferromagnetic ordering at low temperatures, and the exchange interaction is anisotropic. - Abstract: In this paper, with the consideration of crystal field and exchange interaction between the rare-earth Pr 3+ ions, the magnetic anisotropy in praseodymium gallium garnet (PrGaG) in high magnetic fields and at low temperatures is theoretically analyzed. A set of relatively suitable CF parameters is obtained by studying the influence of the variations of nine CF parameters on the magnetization. However, only taking crystal field effect into account, theoretical calculations indicate that the experiments cannot be excellently interpreted. Then, the exchange interaction between Pr 3+ ion, which can be described as an effective exchange field H v = vM = vχH e = ηH e , is further considered. On the other hand, by evaluating the variation of the parameter η with the magnetic fields, our theory implies that PrGaG exhibits ferrimagnetic ordering at low temperatures, and the exchange interaction in PrGaG displays obvious anisotropy. Also, the theoretical data show better agreements with the experimental results.

  3. Determination of redox-active centers in praseodymium doped ceria by in situ-XANES spectroscopy

    DEFF Research Database (Denmark)

    Kiebach, Wolff-Ragnar; Chatzichristodoulou, Christodoulos; Werchmeister, Rebecka Maria Larsen

    2012-01-01

    Praseodymium doped ceria, a material of interest for electrochemical flue gas purification, was investigated with in situ X-ray Absorption Near Edge Structure spectroscopy between room temperature and 500°C in air and diluted nitrogen(II) oxide (NO/Ar) (1% NO in Ar). For temperatures above 400°C...

  4. Towards diode-pumped mid-infrared praseodymium-ytterbium-doped fluoride fiber lasers

    Science.gov (United States)

    Woodward, R. I.; Hudson, D. D.; Jackson, S. D.

    2018-02-01

    We explore the potential of a new mid-infrared laser transition in praseodymium-doped fluoride fiber for emission around 3.4 μm, which can be conveniently pumped by 0.975 μm diodes via ytterbium sensitizer co-doping. Optimal cavity designs are determined through spectroscopic measurements and numerical modeling, suggesting that practical diode-pumped watt-level mid-infrared fiber sources beyond 3 μm could be achieved.

  5. Electrical properties of praseodymium oxide doped Boro-Tellurite glasses

    Energy Technology Data Exchange (ETDEWEB)

    Jagadeesha Gowda, G.V. [Dept. of Physics, Sapthagiri College of Engineering, Bengaluru,India.Email:jagadeeshphy@rediffmail.com (India); Devaraja, C. [Dept.of Physics, Nagarjuna college of engineering and Technology, Bengaluru. India Email: deva.drr@rediffmail.com (India); Eraiah, B. [Dept.of Physics, Bangalore University, Bengaluru,India.Email:eraiah@rediffmail.com (India)

    2016-05-06

    Glasses of the composition xPr{sub 6}O{sub 11}- (35-x)TeO{sub 2}-65B{sub 2}O{sub 3} (x=0, 0.1 to 0.5 mol %) have been prepared using the melt quenching method. The ac and dc conductivity of glass have been measured over a wide range of frequencies and temperatures. Experimental results indicate that the ac conductivity depend on temperature, frequency and Praseodymium content. The conductivity as a function of frequency exhibited two components: dc conductivity (σ{sub dc}), and ac conductivity (σ{sub ac}). The activation energies are estimated and found to be decreases with composition. The impedance plot at each temperature appeared as a semicircle passes through the origin.

  6. Electrical properties of praseodymium oxide doped Boro-Tellurite glasses

    Science.gov (United States)

    Jagadeesha Gowda G., V.; Devaraja, C.; Eraiah, B.

    2016-05-01

    Glasses of the composition xPr6O11- (35-x)TeO2-65B2O3 (x=0, 0.1 to 0.5 mol %) have been prepared using the melt quenching method. The ac and dc conductivity of glass have been measured over a wide range of frequencies and temperatures. Experimental results indicate that the ac conductivity depend on temperature, frequency and Praseodymium content. The conductivity as a function of frequency exhibited two components: dc conductivity (σdc), and ac conductivity (σac). The activation energies are estimated and found to be decreases with composition. The impedance plot at each temperature appeared as a semicircle passes through the origin.

  7. Properties of poly(vinyl alcohol)-borax gel doped with neodymium and praseodymium

    International Nuclear Information System (INIS)

    Lawrence, Mathias B.; Desa, J.A.E.; Rai, Renu; Aswal, V.K.

    2014-01-01

    Neodymium and praseodymium ions, singly and in combination, have been doped into a poly(vinyl alcohol)-borax matrix. X-ray diffraction shows structural correlations from 2 to 6 Å and 15 Å, while small angle neutron scattering indicates that the rare-earth ions do not affect the nanoscale structures of the gels. Differential scanning calorimetry shows the glass transition temperature to increase with concentration of Pr in the gel. Excitation in the ultraviolet region leads to luminescent emission in the visible region. Simultaneous absorption in the visible region then leads to luminescent emission in the near infra-red region. The spectral qualities of the emission bands can be varied by choosing appropriate relative ratios of rare-earth species. (author)

  8. Optical and physical properties of sodium lead barium borate glasses doped with praseodymium ion

    Science.gov (United States)

    Lenkennavar, Susheela K.; Madhu, A.; Eraiah, B.; Kokila, M. K.

    2018-05-01

    Praseodymium doped sodium lead barium borate glasses have been prepared using single step melt quenching technique. The XRD spectrum confirms amorphous nature of glasses. The optical absorbance studies were carried out on these glasses using PekinElemer Lambda-35 Uv-Vis spectrometer in the range of 200 -1100 nm. The optical direct band gap energies were found to be in the range of 3.62 eV to 3.69 eV and indirect band gap energies were found to be in the range of 3.57 eV to 3.62eV. The refractive indices were measured by using Abbe refractometer the values are in the range of 1.620 to 1.625.

  9. Study of the influence of zirconium and gallium on the magnetic properties and microstructures of praseodymium-based permanent magnets

    International Nuclear Information System (INIS)

    Fusco, Alexandre Giardini

    2006-01-01

    In this work was studied the influence of the addition of 0.5 at. % of zirconium and gallium on praseodymium-based HD sintered magnets obtained using a mixture of alloys. The alloys used in this study were: Pr 12.6 Fe 68.3 Co 11.6 B 6 Zr 0.5 Ga 1 , Pr 16 Fe 75.5 B 8 Zr 0.5 , Pr 13 Fe 80.5 B 6 Zr 0.5 . The investigation started by measuring the magnetic properties and observing the microstructure of the magnets. After that, the magnets were annealed at 1000 deg C for 2 hours followed by rapid cooling, in a total of 10 hours. This heat treatment was followed by 5 hours at the same temperature up to a total of 35 hours. Changes in the microstructure were compared to the change in the magnetic properties aiming at a proper understanding of the role of each added element in relation to the magnetically hard phase (phase Φ). It has been shown that gallium and zirconium act as grain refiners of the matrix phase Φ. Gallium acts in the grain and favoring of the shape stability and improvement of the magnetic properties. For the Pr 14.3 Fe 71.9 Co 5.8 B 7 Zr 0.5 Ga 0.5 sintered magnet the evolution of the magnetic properties after 15 hours heat treatment was: remanence from (1.25±0.02) T to (1.30±0.02) T, intrinsic coercivity from (1.11±0.02) T to (0.87±0.02) T, squareness factor from (0.68±0.02) to (0.82±0.02) and energy product from (285±5) kJ/m 3 to (317±5) kJ/m 3 . Zirconium has two effects on the sintered magnets. Firstly, avoiding random grain growth and enhancing anisotropy. However, by concentrating on the grain boundaries, yield reverse domains and is detrimental to the intrinsic coercivity. For the sintered Pr 14.5 Fe 78 B 7 Zr 0.5 magnet the evolution of the magnetic properties achieved after a heat treatment of 15 hours was: remanence from (1.19±0.02) T to (1.25±0.02) T, coercivity from (0.74±0.02) T to (0.94±0.02) T, squareness factor from (0.88±0.02) to (0,85±0.02) and energy product from (258±5) kJ/m 3 to (291±5) kJ/m 3 . For the Pr 16 Fe 75

  10. Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

    International Nuclear Information System (INIS)

    Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

    1989-01-01

    When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

  11. Neutron transmutation doping of gallium arsenide

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-12-01

    Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

  12. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  13. Photoluminescence, reddish orange long persistent luminescence and photostimulated luminescence properties of praseodymium doped CdGeO3 phosphor

    International Nuclear Information System (INIS)

    Jin, Yahong; Hu, Yihua; Chen, Li; Fu, Yinrong; Mu, Zhongfei; Wang, Tao; Lin, Jun

    2014-01-01

    Highlights: • A novel phosphor CdGeO 3 :Pr 3+ was synthesized successfully. • The persistent luminescence properties of CdGeO 3 :Pr 3+ were studied. • The photostimulated luminescence properties of CdGeO 3 :Pr 3+ were investigated. • The persistent and photostimulated luminescence mechanisms were discussed in detail. - Abstract: Praseodymium doped CdGeO 3 phosphors were prepared successfully by a conventional high temperature solid-state reaction method. It showed reddish orange long persistent luminescence (LPL) after the short UV-irradiation. The reddish orange photostimulated luminescence (PSL) was also observed upon near infrared stimulation at 980 nm after per-exposure into UV light. The origin of LPL and PSL was identified with the emission from Pr 3+ ions with the aid of traps in host lattice. The optimal concentration of Pr 3+ ions for the brightest photoluminescence (PL) emission and the best LPL characteristic were experimentally to be about 3% and 0.5 mol%, respectively. The trapping and de-trapping processes of charge carriers between shallower and deep traps were illustrated. A model was proposed on the basis of experimental results to study the mechanisms of LPL and PSL

  14. Photoluminescence studies on holmium (III) and praseodymium (III) doped calcium borophosphate (CBP) phosphors

    Science.gov (United States)

    Reddy Prasad, V.; Damodaraiah, S.; Devara, S. N.; Ratnakaram, Y. C.

    2018-05-01

    Using solid state reaction method, Ho3+ and Pr3+ doped calcium borophosphate (CBP) phosphors were prepared. These phosphors were characterized using XRD, SEM, FT-IR, 31P solid state NMR, photoluminescence (PL) and decay profiles. Structural details were discussed from XRD and FT-IR spectra. From 31P NMR spectra of these phosphors, mono-phosphate complexes Q0-(PO43-) were observed. Photoluminescence spectra were measured for both Ho3+ and Pr3+ doped calcium borophosphate phosphors and the spectra were studied for different concentrations. Decay curves were obtained for the excited level, 5F4+5S2 of Ho3+ and 1D2 level of Pr3+ in these calcium borophosphate phosphors and lifetimes were measured. CIE color chromaticity diagrams are drawn for these two rare earth ions in calcium borophosphate phosphors. Results show that Ho3+ and Pr3+ doped CBP phosphors might be served as green and red luminescence materials.

  15. Characterization of luminescent praseodymium-doped ZrO{sub 2} coatings deposited by ultrasonic spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Brito, F [Laboratorio de Materiales Optoelectronicos, DiDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, C.P. 80010 Culiacan, Sinaloa (Mexico); Garcia-Hipolito, M [Departamento de Materiales Metalicos y Ceramicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, AP 70-360 Coyoacan 04510 DF (Mexico); Alejo-Armenta, C [Laboratorio de Materiales Optoelectronicos, DiDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, C.P. 80010 Culiacan, Sinaloa (Mexico); Alvarez-Fragoso, O [Departamento de Materiales Metalicos y Ceramicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, AP 70-360 Coyoacan 04510 DF (Mexico); Falcony, C [Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 DF (Mexico)

    2007-11-07

    ZrO{sub 2} : Pr films were synthesized by the ultrasonic spray pyrolysis process. X-ray diffraction studies, as a function of the deposition temperature, indicate a tetragonal crystal structure of zirconia as the substrate temperature was increased. Luminescence (photo- and cathodoluminescence) properties of the films were studied as a function of growth parameters such as the substrate temperature and the praseodymium concentration. For an excitation wavelength of 290 nm, all the photoluminescent emission spectra show peaks located at 490, 510, 566, 615, 642, 695, 718, 740 and 833 nm, associated with the electronic transitions {sup 3} P{sub 0} {yields} {sup 3}H{sub 4}, {sup 3}P{sub 0} {yields} {sup 3} H{sub 4}, {sup 3}P{sub 1} + {sup 1}I{sub 6} {yields} {sup 3}H{sub 5}, {sup 1}D{sub 2} {yields} {sup 3}H{sub 4}, {sup 3} P{sub 0} {yields} {sup 3}H{sub 6}, {sup 1}D{sub 2} {yields} {sup 3} H{sub 5}, {sup 1}D{sub 2} {yields} {sup 3}H{sub 5}, {sup 3} P{sub 0} {yields} {sup 3}F{sub 3,4} and {sup 1}D{sub 2} {yields} {sup 3} F{sub 2} of the Pr{sup 3+} ion. As the deposition temperature is increased, an increasing intensity of the luminescence emission is observed. Also, quenching of the luminescence, with increasing doping concentration, is observed. The chemical composition of the films as determined by energy dispersive spectroscopy is reported as well. In addition, the surface morphology characteristics of the films, as a function of the deposition temperature, are presented.

  16. Gallium

    Science.gov (United States)

    Foley, Nora K.; Jaskula, Brian W.; Kimball, Bryn E.; Schulte, Ruth F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. Gallium is used in a wide variety of products that have microelectronic components containing either gallium arsenide (GaAs) or gallium nitride (GaN). GaAs is able to change electricity directly into laser light and is used in the manufacture of optoelectronic devices (laser diodes, light-emitting diodes [LEDs], photo detectors, and solar cells), which are important for aerospace and telecommunications applications and industrial and medical equipment. GaAs is also used in the production of highly specialized integrated circuits, semiconductors, and transistors; these are necessary for defense applications and high-performance computers. For example, cell phones with advanced personal computer-like functionality (smartphones) use GaAs-rich semiconductor components. GaN is used principally in the manufacture of LEDs and laser diodes, power electronics, and radio-frequency electronics. Because GaN power transistors operate at higher voltages and with a higher power density than GaAs devices, the uses for advanced GaN-based products are expected to increase in the future. Gallium technologies also have large power-handling capabilities and are used for cable television transmission, commercial wireless infrastructure, power electronics, and satellites. Gallium is also used for such familiar applications as screen backlighting for computer notebooks, flat-screen televisions, and desktop computer monitors.Gallium is dispersed in small amounts in many minerals and rocks where it substitutes for elements of similar size and charge, such as aluminum and zinc. For example, gallium is found in small amounts (about 50 parts per million) in such aluminum-bearing minerals as diaspore-boehmite and gibbsite, which form bauxite deposits, and in the zinc-sulfide mineral sphalerite, which is found in many mineral deposits. At the present time, gallium metal is derived mainly as a

  17. Praseodymium ion doped phosphate glasses for integrated broadband ion-exchanged waveguide amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Shen, L.F. [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Chen, B.J. [Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Lin, H., E-mail: lhai8686@yahoo.com [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Pun, E.Y.B. [Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

    2015-02-15

    Highlights: • Effective near-infrared emission (1380-1525 nm) is observed in Pr{sup 3+}-doped phosphate glasses. • Effective bandwidth of {sup 1}D{sub 2} → {sup 1}G{sub 4} transition emission is obtained to be 124 nm. • Channel waveguides have been fabricated by K{sup +}-Na{sup +} ion-exchange method. • Pr{sup 3+}-doped phosphate glasses are promising in developing integrated broadband waveguide amplifier. - Abstract: Effective near-infrared emission covering the fifth optical telecommunication window (1380-1525 nm) has been observed in Pr{sup 3+}-doped phosphate (NMAP) glasses. Judd-Ofelt parameters Ω{sub 2} (6.38 × 10{sup −20} cm{sup 2}), Ω{sub 4} (20.30 × 10{sup −20} cm{sup 2}) and Ω{sub 6} (0.40 × 10{sup −20} cm{sup 2}) indicate a high inversion asymmetrical and strong covalent environment in the optical glasses. The effective bandwidth (Δλ{sub eff}) of the corresponding {sup 1}D{sub 2} → {sup 1}G{sub 4} transition emission is obtained to be 124 nm, and the maximum stimulated emission cross-section (σ{sub em-max}) at 1468 nm is derived to be 1.14 × 10{sup −20} cm{sup 2}. Channel waveguide was fabricated successfully by K{sup +}-Na{sup +} ion-exchange method with mode field diameter of 8.8 μm in the horizontal direction and 6.7 μm in the vertical direction. Broad effective bandwidth, large emission cross-section and perfect thermal ion-exchangeability indicate that Pr{sup 3+}-doped NMAP phosphate glasses are promising in developing integrated broadband waveguide amplifier, especially operating at E- and S-bands which belong to the fifth optical telecommunication window.

  18. Spray deposited gallium doped tin oxide thinfilm for acetone sensor application

    Science.gov (United States)

    Preethi, M. S.; Bharath, S. P.; Bangera, Kasturi V.

    2018-04-01

    Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350°C temperature.

  19. Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

    2014-09-01

    The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

  20. Chemical composition of cadmium selenochromite crystals doped with indium, silver and gallium

    International Nuclear Information System (INIS)

    Bel'skij, N.K.; Ochertyanova, L.I.; Shabunina, G.G.; Aminov, T.G.

    1985-01-01

    The high accuracy chemical analysis Which allows one to observe doping effect on the cadmium selenochromite crystal composition is performed. The problem on the possibility of impurity atom substitution for basic element is considered on the basis of data of atomic-absorption analysis of doped crystals. The crystals of cadmium selenochromite doped with indium by chromium to cadmium ratio are distributed into two groups and probably two types of substitution take place. At 0.08-1.5 at.% indium concentrations the Cr/Cd ratio >2. One can assume that indium preferably takes cadmium tetrahedral positions whereas at 1.5-2.5 at. % concentrations the Cr/Cd ratio =2 and cadmium is substituted for silver which does not contradict crystallochemical and physical properties of this compound. In crystals with gallium the Cr/Cd ratio <2. Gallium preferably substitutes chromium

  1. Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

    Energy Technology Data Exchange (ETDEWEB)

    Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

    2012-08-15

    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

  2. Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

    Science.gov (United States)

    Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

    2017-05-01

    The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

  3. Fabrication and PL of Al-doped gallium nitride nanowires

    International Nuclear Information System (INIS)

    Zhou Shaomin

    2006-01-01

    Mass Al-doped GaN nanowires with an average diameter of about 50 nm and lengths up to several millimeters are fabricated by a CVD approach. The as-fabricated products have a single crystal phase and grow along the direction. The growth of Al-doped GaN nanowires is suggested for quasi-vapor-solid mechanism (QVSM). In particular, for as large-scale GaN nanowires, a novel strong ultraviolet PL spectrum (from 3.3 to 3.7 eV) appears with a doping Al where the Al-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail

  4. Electrical and optical properties of silicon-doped gallium nitride

    Indian Academy of Sciences (India)

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly ...

  5. Shallow doping of gallium arsenide by recoil implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Souza, J.P. de; Rutz, R.F.; Cardone, F.; Norcott, M.H.

    1989-01-01

    Si atoms were recoil-implanted into GaAs by bombarding neutral (As + ) or dopant (Si + ) ions through a thin Si cap. The bombarded samples were subsequently rapid thermally or furnace annealed at 815-1000 degree C in Ar or arsine ambient. The presence of the recoiled Si in GaAs and resulting n + -doping was confirmed by secondary ion mass spectrometry and Hall measurements. It was found that sheet resistance of 19 cm 3 and the annealing temperature was > 850 degree C. The present electrical data show that the recoil implant method is a viable alternative to direct shallow implant for n + doping of GaAs. 7 refs., 3 figs., 1 tab

  6. Germanium-doped gallium phosphide obtained by neutron irradiation

    Science.gov (United States)

    Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

    1993-08-01

    Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

  7. Study of the influence of zirconium and gallium on the magnetic properties and microstructures of praseodymium-based permanent magnets; Estudo da influencia do zirconio e galio nas propriedades magneticas e na microestrutura dos imas permanentes a base de praseodimio

    Energy Technology Data Exchange (ETDEWEB)

    Fusco, Alexandre Giardini

    2006-07-01

    In this work was studied the influence of the addition of 0.5 at. % of zirconium and gallium on praseodymium-based HD sintered magnets obtained using a mixture of alloys. The alloys used in this study were: Pr{sub 12.6}Fe{sub 68.3}Co{sub 11.6}B{sub 6}Zr{sub 0.5}Ga{sub 1}, Pr{sub 16}Fe{sub 75.5}B{sub 8}Zr{sub 0.5}, Pr{sub 13}Fe{sub 80.5}B{sub 6}Zr{sub 0.5}. The investigation started by measuring the magnetic properties and observing the microstructure of the magnets. After that, the magnets were annealed at 1000 deg C for 2 hours followed by rapid cooling, in a total of 10 hours. This heat treatment was followed by 5 hours at the same temperature up to a total of 35 hours. Changes in the microstructure were compared to the change in the magnetic properties aiming at a proper understanding of the role of each added element in relation to the magnetically hard phase (phase {phi}). It has been shown that gallium and zirconium act as grain refiners of the matrix phase {phi}. Gallium acts in the grain and favoring of the shape stability and improvement of the magnetic properties. For the Pr{sub 14.3}Fe{sub 71.9}Co{sub 5.8}B{sub 7}Zr{sub 0.5}Ga{sub 0.5} sintered magnet the evolution of the magnetic properties after 15 hours heat treatment was: remanence from (1.25{+-}0.02) T to (1.30{+-}0.02) T, intrinsic coercivity from (1.11{+-}0.02) T to (0.87{+-}0.02) T, squareness factor from (0.68{+-}0.02) to (0.82{+-}0.02) and energy product from (285{+-}5) kJ/m{sup 3} to (317{+-}5) kJ/m{sup 3}. Zirconium has two effects on the sintered magnets. Firstly, avoiding random grain growth and enhancing anisotropy. However, by concentrating on the grain boundaries, yield reverse domains and is detrimental to the intrinsic coercivity. For the sintered Pr{sub 14.5}Fe{sub 78}B{sub 7}Zr{sub 0.5} magnet the evolution of the magnetic properties achieved after a heat treatment of 15 hours was: remanence from (1.19{+-}0.02) T to (1.25{+-}0.02) T, coercivity from (0.74{+-}0.02) T to (0

  8. Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

    International Nuclear Information System (INIS)

    Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

    2015-01-01

    Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

  9. Optically detected magnetic resonance of sulfur doped gallium phosphide

    International Nuclear Information System (INIS)

    Brower, K.L.

    1990-01-01

    The authors have recently extended our magnetic resonance capabilities to include optically detected magnetic resonance (ODMR) for purposes of studying defects in III-V compound semiconductors systems. Some of the systems of particular interest with regard to defect studies are samples implanted with particular isotopes. For example, this technique may allow one to observe the hyperfine structure of impurity donors in GaP. Other interesting material systems are the strained layer superlattices and their interfaces. GaP is one of the III-V compound semiconductors of particular interest for ODMR studies. In this paper the authors report the results of preliminary ODMR observations on as-grown sulfur doped GaP

  10. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  11. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

    Science.gov (United States)

    Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

    2016-12-21

    Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

  12. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

  13. Growth and scintillation properties of praseodymium doped (Lu,Gd).sub.3./sub.(Ga,Al).sub.5./sub.O.sub.12./sub. single crystals

    Czech Academy of Sciences Publication Activity Database

    Kamada, K.; Nikl, Martin; Kurosawa, S.; Shoji, Y.; Pejchal, Jan; Ohashi, Y.; Yokota, Y.; Yoshikawa, A.

    2016-01-01

    Roč. 169, Jan (2016), s. 811-815 ISSN 0022-2313. [International Conference on Luminescence and Optical Spectroscopy of Condensed Matter /17./. Wroclaw, 13.07.2014-18.07.2014] R&D Projects: GA MŠk(CZ) LH14266 EU Projects: European Commission(XE) 316906 - LUMINET Institutional support: RVO:68378271 Keywords : single crystal growth * oxides * scintillators * praseodymium * garnet Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.686, year: 2016

  14. Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

    Science.gov (United States)

    Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

    2012-08-01

    Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

  15. The frequency-domain relaxation response of gallium doped Cd{sub 1-x}Mn{sub x}Te

    Energy Technology Data Exchange (ETDEWEB)

    Trzmiel, Justyna; Weron, Karina [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jurlewicz, Agnieszka [Hugo Steinhaus Center, Institute of Mathematics and Computer Science, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2010-03-10

    In this paper the complex dielectric permittivity of gallium doped Cd{sub 0.99}Mn{sub 0.01}Te mixed crystals is studied at different temperatures. We observe a two-power-law relaxation pattern with m and n, the low- and high-frequency power-law exponents respectively, satisfying the relation m < 1 - n. To interpret the empirical result we propose a correlated-cluster relaxation mechanism. This approach allows us to find origins of both power-law exponents, m and n.

  16. White light generation from Dy3+-doped yttrium aluminium gallium mixed garnet nano-powders

    International Nuclear Information System (INIS)

    Praveena, R.; Balasubrahmanyam, K.; Jyothi, L.; Venkataiah, G.; Basavapoornima, Ch.; Jayasankar, C.K.

    2016-01-01

    Yttrium aluminium gallium garnet (here after referred as YAGG), Y 3 Al 5−y Ga y O 12 (where y=1.0, 2.5 and 4.0), nano-powders doped with 1.0 mol% of dysprosium (Dy 3+ ) ions were synthesised by the citrate sol–gel method. The structure, phase evolution, morphology and luminescence properties of these nano-crytalline powders were characterized by means of XRD, FTIR, Raman, electron microscopy and UV–vis spectroscopy. From the XRD results, the crystallite sizes were found to be in the range of 18–26 nm. Excitation spectra of YAGG nano-powders showed that the samples can be efficiently excited by near UV and blue LEDs. Upon excitation at 448 nm, the emission spectra of all these samples showed two bands centred at 485 (blue) and 585 nm (yellow) which corresponds to the 4 F 9/2 → 6 H 15/2 and 4 F 9/2 → 6 H 13/2 transitions of Dy 3+ ion, respectively. Intensity of blue emission was found to be stronger than the yellow emission in all the three samples. Integrated yellow to blue (Y/B) emission intensity was found to be increased with increasing the Ga content in the present YAGG host. Therefore, concentration (0.1, 1.0, 2.0 and 4.0 mol%) of Dy 3+ ions was varied in the Ga rich (Y 3 Ga 4 AlO 12 ) nano-powder. The chromaticity co-ordinates of all the prepared nano-powders were located in the white light region and also found to be dependent on Dy 3+ ion concentration and excitation wavelength. The decay curves for 4 F 9/2 level of Dy 3+ ion exhibited non-exponential nature in all the studied samples and the lifetime values remained constant (~1.0 ms) with increasing the Ga content, but were found to decrease with increasing the Dy 3+ ion concentration. The results indicated that 2.0 mol% of Dy 3+ -doped Y 3 Ga 4 AlO 12 nano-powder under 352 nm excitation is suitable for the white light emitting device applications.

  17. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  18. Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

    Science.gov (United States)

    Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

    2018-04-01

    ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

  19. Properties of Er and Yb Doped Gallium nitride layers fabricated by magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Prajzler, V.; Burian, Z.; Hüttel, I.; Špirková, J.; Hamáček, J.; Oswald, J.; Zavadil, Jiří; Peřina, Vratislav

    2006-01-01

    Roč. 46, č. 6 (2006), s. 49-55 ISSN 1210-2709 R&D Projects: GA ČR(CZ) GA102/06/0424 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10480505 Keywords : fluorescence * gallium * rare earth compounds Subject RIV: BM - Solid Matter Physics ; Magnetism

  20. DFT study on the adsorption of diethyl, ethyl methyl, and dimethyl ethers on the surface of gallium doped graphene

    Energy Technology Data Exchange (ETDEWEB)

    Shokuhi Rad, Ali, E-mail: a.shokuhi@gmail.com [Department of Chemical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Sani, Emad; Binaeian, Ehsan [Department of Chemical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Peyravi, Majid; Jahanshahi, Mohsen [Faculty of Chemical Engineering, Babol University of Technology, Babol (Iran, Islamic Republic of)

    2017-04-15

    Highlights: • Adsorption of three ether molecules on the surface of Ga-doped graphene has been investigated. • High degree of adsorption for all analytes is found. • Ga-doped graphene shows p-type semiconductor property upon adsorption of ether molecules. - Abstract: In this study, we used density functional theory (DFT) to search on the adsorption properties of three important compounds of ether family; diethyl ether (DEE), ethyl methyl ether (EME), and dimethyl ether (DME) on the surface of Gallium doped graphene (GaG). We used three functionals (B3LYP, wb97xd, and MPW1PW91) for optimization and calculation of adsorption energy. After fully optimization, we scrutinized on the charge allocations on the adsorbed ethers as well as GaG (at the area of interaction) based on natural bond orbitals (NBO). Besides, we have calculated the amount of charge transfer upon adsorption of each analyte. We revel that GaG is an ideal adsorbent for chemisorption of all above-mentioned ethers. There is a little difference between the values of adsorption; −123.5, −120, and −118.3 kJ/mol (based on wb97xd) for DEE, EME, and DME, respectively. We found significant changes in the electronic structure of both adsorbent and adsorbate upon adsorption. Moreover, results of charge analyses confirm GaG is a p-type semiconductor.

  1. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

    Science.gov (United States)

    Kang, Byung Ha; Kim, Won-Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae

    2018-02-28

    A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10 6 , and a detectivity of 6.93 × 10 11 Jones under 635 nm light illumination.

  2. DFT study on the adsorption of diethyl, ethyl methyl, and dimethyl ethers on the surface of gallium doped graphene

    International Nuclear Information System (INIS)

    Shokuhi Rad, Ali; Sani, Emad; Binaeian, Ehsan; Peyravi, Majid; Jahanshahi, Mohsen

    2017-01-01

    Highlights: • Adsorption of three ether molecules on the surface of Ga-doped graphene has been investigated. • High degree of adsorption for all analytes is found. • Ga-doped graphene shows p-type semiconductor property upon adsorption of ether molecules. - Abstract: In this study, we used density functional theory (DFT) to search on the adsorption properties of three important compounds of ether family; diethyl ether (DEE), ethyl methyl ether (EME), and dimethyl ether (DME) on the surface of Gallium doped graphene (GaG). We used three functionals (B3LYP, wb97xd, and MPW1PW91) for optimization and calculation of adsorption energy. After fully optimization, we scrutinized on the charge allocations on the adsorbed ethers as well as GaG (at the area of interaction) based on natural bond orbitals (NBO). Besides, we have calculated the amount of charge transfer upon adsorption of each analyte. We revel that GaG is an ideal adsorbent for chemisorption of all above-mentioned ethers. There is a little difference between the values of adsorption; −123.5, −120, and −118.3 kJ/mol (based on wb97xd) for DEE, EME, and DME, respectively. We found significant changes in the electronic structure of both adsorbent and adsorbate upon adsorption. Moreover, results of charge analyses confirm GaG is a p-type semiconductor.

  3. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

    Science.gov (United States)

    Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

    2018-01-01

    ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

  4. Magnetic exciton dispersion in praseodymium

    DEFF Research Database (Denmark)

    Rainford, B. D.; Houmann, Jens Christian Gylden

    1971-01-01

    Measurements of the dispersion of magnetic excitons have been made in a single crystal of praseodymium metal using inelastic neutron scattering. A preliminary analysis of the data yields the first detailed information about the exchange interactions and the crystal field splittings in the light...... rare-earth metals....

  5. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  6. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  7. Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

    Science.gov (United States)

    Amin, N. Mohd; Ng, S. S.

    2018-01-01

    Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

  8. Surface study of gallium- and aluminum- doped graphenes upon adsorption of cytosine: DFT calculations

    International Nuclear Information System (INIS)

    Shokuhi Rad, Ali; Zareyee, Daryoush; Peyravi, Majid; Jahanshahi, Mohsen

    2016-01-01

    Highlights: • P1 and P4 are the most stable adsorption configurations for cytosine. • NBO analysis show n-type semiconductor property for both Al- and Ga-doped graphenes. • Important changes in the HOMO and LUMO of doped graphene upon adsorption of cytosine. • Increase in the conductivity of system when cytosine is adsorbed on doped graphenes. - Abstract: The adsorption of cytosine molecule on Al- and Ga- doped graphenes is studied using first-principles density functional theory (DFT) calculations. The energetically most stable geometries of cytosine on both Al- and Ga- doped graphenes are determined and the adsorption energies are calculated. The net charge of transfer as well as local charge of doped atoms upon adsorption of cytosine are studied by natural bond orbitals (NBO) analysis. Orbital hybridizing of complexes was searched by frontier molecular orbital theory (FMO), and density of states (DOS). Depending on the side of cytosine, there are four possible sites for its adsorption on doped graphene; denoted as P1, P2, P3, and P4, respectively. The order of binding energy in the case of Al-doped graphene is found as P1 > P4 > P3 > P2. Interestingly, the order in the case of Ga-doped graphene changes to: P4 ∼ P1 > P3 > P2. Both surfaces show superior adsorbent property, resulting chemisorption of cytosine, especially at P1 and P4 position configurations. The NBO charge analysis reveals that the charge transfers from Al- and Ga- doped graphene sheets to cytosine. The electronic properties of both surfaces undertake important changes after cytosine adsorption, which indicates notable change in its electrical conductivity.

  9. Surface study of gallium- and aluminum- doped graphenes upon adsorption of cytosine: DFT calculations

    Energy Technology Data Exchange (ETDEWEB)

    Shokuhi Rad, Ali, E-mail: a.shokuhi@gmail.com [Department of Chemical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Zareyee, Daryoush [Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Peyravi, Majid; Jahanshahi, Mohsen [Faculty of Chemical Engineering, Babol University of Technology, Babol (Iran, Islamic Republic of)

    2016-12-30

    Highlights: • P1 and P4 are the most stable adsorption configurations for cytosine. • NBO analysis show n-type semiconductor property for both Al- and Ga-doped graphenes. • Important changes in the HOMO and LUMO of doped graphene upon adsorption of cytosine. • Increase in the conductivity of system when cytosine is adsorbed on doped graphenes. - Abstract: The adsorption of cytosine molecule on Al- and Ga- doped graphenes is studied using first-principles density functional theory (DFT) calculations. The energetically most stable geometries of cytosine on both Al- and Ga- doped graphenes are determined and the adsorption energies are calculated. The net charge of transfer as well as local charge of doped atoms upon adsorption of cytosine are studied by natural bond orbitals (NBO) analysis. Orbital hybridizing of complexes was searched by frontier molecular orbital theory (FMO), and density of states (DOS). Depending on the side of cytosine, there are four possible sites for its adsorption on doped graphene; denoted as P1, P2, P3, and P4, respectively. The order of binding energy in the case of Al-doped graphene is found as P1 > P4 > P3 > P2. Interestingly, the order in the case of Ga-doped graphene changes to: P4 ∼ P1 > P3 > P2. Both surfaces show superior adsorbent property, resulting chemisorption of cytosine, especially at P1 and P4 position configurations. The NBO charge analysis reveals that the charge transfers from Al- and Ga- doped graphene sheets to cytosine. The electronic properties of both surfaces undertake important changes after cytosine adsorption, which indicates notable change in its electrical conductivity.

  10. Detection of spin-states in Mn-doped gallium arsenide films

    International Nuclear Information System (INIS)

    Hofer, Werner A; Palotas, Krisztian; Teobaldi, Gilberto; Sadowski, Janusz; Mikkelsen, Anders; Lundgren, Edvin

    2007-01-01

    We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom

  11. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Science.gov (United States)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  12. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

    Czech Academy of Sciences Publication Activity Database

    Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

    2004-01-01

    Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

  13. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  14. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  15. Optical Properties of Gallium-Doped Zinc Oxide—A Low-Loss Plasmonic Material: First-Principles Theory and Experiment

    Directory of Open Access Journals (Sweden)

    Jongbum Kim

    2013-12-01

    Full Text Available Searching for better materials for plasmonic and metamaterial applications is an inverse design problem where theoretical studies are necessary. Using basic models of impurity doping in semiconductors, transparent conducting oxides (TCOs are identified as low-loss plasmonic materials in the near-infrared wavelength range. A more sophisticated theoretical study would help not only to improve the properties of TCOs but also to design further lower-loss materials. In this study, optical functions of one such TCO, gallium-doped zinc oxide (GZO, are studied both experimentally and by first-principles density-functional calculations. Pulsed-laser-deposited GZO films are studied by the x-ray diffraction and generalized spectroscopic ellipsometry. Theoretical studies are performed by the total-energy-minimization method for the equilibrium atomic structure of GZO and random phase approximation with the quasiparticle gap correction. Plasma excitation effects are also included for optical functions. This study identifies mechanisms other than doping, such as alloying effects, that significantly influence the optical properties of GZO films. It also indicates that ultraheavy Ga doping of ZnO results in a new alloy material, rather than just degenerately doped ZnO. This work is the first step to achieve a fundamental understanding of the connection between material, structural, and optical properties of highly doped TCOs to tailor those materials for various plasmonic applications.

  16. Selective excitation of the yellow and blue luminescence in n- and p-doped Gallium Nitride

    International Nuclear Information System (INIS)

    Colton, John S.

    2000-01-01

    GaN is an interesting material: technologically very useful, but still having many unexplained features. Two such features are the broad defect-related luminescence bands: the YL of n-type GaN and the BL of Mg-doped p-type GaN. We have employed selective excitation to investigate these bands. In the case of the YL, most of the previous evidence has supported a recombination model between distant donors and acceptors, most likely a transition involving a shallow donor to a deep acceptor. Our selective excitation experiments have resolved finer structures within the YL. Our results indicate that the YL in bulk samples is related to the YL in film samples. We suggest that selectively excited YL involves recombination at DAP complexes, rather than between spatially distant DAPs (however other recombination channels, including that of distant DAPs may become significant under other excitation conditions). Characteristics of the DAP complexes within our YL model include (a) an electron localization energy of around 60-70 meV, (b) a localized phonon energy of around 40 meV, and (c) excited states of the complex at 200 and 370 meV above the ground state. In the case of the BL, the deep defect responsible for the BL is unknown, and there may not even be a deep defect involved. Also in dispute is the role of potential fluctuations in the properties of the BL. Our results have been explain in a model whereby emission is from DAPs, and significant effects are produced by doping-related potential fluctuations and disorder. Characteristics of the our model for the BL include (a) an Urbach tail, having width E 0 = 33 meV, (b) a strong electron-LO phonon coupling occurring with a Frank-Condon shift of ∼ 180 meV between excitation and emission, (c) a mobility gap at 2.8 eV, separating highly mobile states and highly localized states, and (d) PL-like behavior for excitation energies larger than 2.8 eV, having a blue-shift with increasing excitation energy caused by the increased

  17. Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Ling, C. C.; Fung, S.; Beling, C. D.; Huimin, Weng

    2001-01-01

    Defects in p-type Zn-doped liquid-encapsulated Czochralski--grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral V Ga -related defect. Its concentration in the as-grown sample was found to be in the range of 10 17 --10 18 cm -3 . At an annealing temperature of 300 o C, the V Ga -related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy--Zn-defect complex. This defect started annealing out at a temperature of 580 o C. A positron shallow trap having binding energy and concentration of 75 meV and 10 18 cm -3 , respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn

  18. Enhanced, robust light-driven H2 generation by gallium-doped titania nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Si [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Department of Chemistry, Stony Brook University, Stony Brook; USA; Nguyen-Phan, Thuy-Duong [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Vovchok, Dimitriy [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Department of Chemistry, Stony Brook University, Stony Brook; USA; Waluyo, Iradwikanari [Photon Sciences Division, National Synchrotron Light Source II, Brookhaven National Laboratory; Upton; USA; Palomino, Robert M. [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Gamalski, Andrew D. [Center for Functional Nanomaterials, Brookhaven National Laboratory; Upton; USA; Barrio, Laura [CSIC – Instituto de Catalisis y Petroleoquimica Cantoblanco; E-28049 Madrid; Spain; Xu, Wenqian [X-ray Science Division, Advanced Photon Source, Argonne National Laboratory; Argonne; USA; Polyansky, Dmitry E. [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Rodriguez, José A. [Chemistry Department, Brookhaven National Laboratory; Upton; USA; Department of Chemistry, Stony Brook University, Stony Brook; USA; Senanayake, Sanjaya D. [Chemistry Department, Brookhaven National Laboratory; Upton; USA

    2017-12-14

    Successful introduction of gallium ions into TiO2nanoparticles significantly promotes the H2evolution activity and stability, increasing the opportunities for designing promising photocatalysts for green fuel production.

  19. Luminescent properties of praseodymium in some fluorides

    International Nuclear Information System (INIS)

    Potapov, A.S.; Rodnyj, P.A.; Mikhrin, S.B.; Magunov, I.R.

    2005-01-01

    Influence of diverse factors on efficiency of the Pr 3+ cascade emission in BaF 2 : Pr and SrAlF 5 : Pr. The effect of the environment of the luminescence center on the mutual position of the lowest 5d and the 4f level 1 S 0 of Pr 3+ ion is considered. PrF 3 clustering in BaF 2 is observed at a high praseodymium concentration. The promising potential of magnesium as a charge compensator for praseodymium in SrAlF 5 is demonstrated [ru

  20. Luminescent properties of Cr-doped gallium garnet crystals grown by the micro-pulling-down method

    Czech Academy of Sciences Publication Activity Database

    Kurosawa, S.; Suzuki, A.; Yamaji, A.; Kamada, K.; Pejchal, Jan; Ohashi, Y.; Yokota, Y.; Chani, V.I.; Yoshikawa, A.

    2016-01-01

    Roč. 452, Oct (2016), s. 95-100 ISSN 0022-0248. [American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015] Institutional support: RVO:68378271 Keywords : scintillator materials * single crystal growth * gallium compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.751, year: 2016

  1. Thermal effects from modified endodontic laser tips used in the apical third of root canals with erbium-doped yttrium aluminium garnet and erbium, chromium-doped yttrium scandium gallium garnet lasers.

    Science.gov (United States)

    George, Roy; Walsh, Laurence J

    2010-04-01

    To evaluate the temperature changes occurring on the apical third of root surfaces when erbium-doped yttrium aluminium garnet (Er:YAG) and erbium, chromium-doped yttrium scandium gallium garnet (Er,Cr:YSGG) laser energy was delivered with a tube etched, laterally emitting conical tip and a conventional bare design optical fiber tip. Thermal effects of root canal laser treatments on periodontal ligament cells and alveolar bone are of concern in terms of safety. A total of 64 single-rooted extracted teeth were prepared 1 mm short of the working length using rotary nickel-titanium Pro-Taper files to an apical size corresponding to a F5 Pro-Taper instrument. A thermocouple located 2 mm from the apex was used to record temperature changes arising from delivery of laser energy through laterally emitting conical tips or plain tips, using an Er:YAG or Er,Cr:YSGG laser. For the Er:YAG and Er,Cr:YSGG systems, conical fibers showed greater lateral emissions (452 + 69% and 443 + 64%) and corresponding lower forward emissions (48 + 5% and 49 + 5%) than conventional plain-fiber tips. All four combinations of laser system and fiber design elicited temperature increases less than 2.5 degrees C during lasing. The use of water irrigation attenuated completely the thermal effects of individual lasing cycles. Laterally emitting conical fiber tips can be used safely under defined conditions for intracanal irradiation without harmful thermal effects on the periodontal apparatus.

  2. Gallium interstitial contributions to diffusion in gallium arsenide

    Science.gov (United States)

    Schick, Joseph T.; Morgan, Caroline G.

    2011-09-01

    encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

  3. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  4. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    International Nuclear Information System (INIS)

    Pham, Duy Phong; Nguyen, Huu Truong; Phan, Bach Thang; Hoang, Van Dung; Maenosono, Shinya; Tran, Cao Vinh

    2015-01-01

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes

  5. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  6. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  7. Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues

    Directory of Open Access Journals (Sweden)

    Yu. V. Terenteva

    2015-03-01

    Full Text Available In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r} in atomic pairs for structures of AIIIBV and AIIBIVСV2 types and for MnAs. According to the calculations of internal energy, entropy and free energy of Helmholtz (Т = 298К, in the context of used models, addition of manganese to the arsenide’s AIIIBV and AIIBIVСV2 nanolayers affects its stability in different ways depending on its morphology and substitution mode. However, a critical instability in nanofilm leading to the tendency of growing of a new phase germ may be formed under any manganese concentrations. This leads to deterioration of electrophysical parameters of magnetic semiconductor compounds that is agreed with experimental data.

  8. Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas

    International Nuclear Information System (INIS)

    Takeda, Satoshi; Fukawa, Makoto

    2004-01-01

    The effects of water partial pressure (P H 2 O ) on electrical and optical properties of Ga-doped ZnO films grown by DC magnetron sputtering were investigated. With increasing P H 2 O , the resistivity (ρ) of the films grown in pure Ar gas (Ar-films) significantly increased due to the decrease in both free carrier density and Hall mobility. The transmittance in the wavelength region of 300-400 nm for the films also increased with increasing P H 2 O . However, no significant P H 2 O dependence of the electrical and optical properties was observed for the films grown in H 2 /Ar gas mixture (H 2 /Ar-films). Secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) analysis revealed that hydrogen concentration in the Ar-films increased with increasing P H 2 O and grain size of the films decreases with increasing the hydrogen concentration. These results indicate that the origin of the incorporated hydrogen is attributed to the residual water vapor in the coating chamber, and that the variation of ρ and transmittance along with P H 2 O of the films resulted from the change in the grain size. On the contrary, the hydrogen concentration in H 2 /Ar-films was almost constant irrespective of P H 2 O and the degree of change in the grain size of the films versus P H 2 O was much smaller than that of Ar-films. These facts indicate that the hydrogen primarily comes from H 2 gas and the adsorption species due to H 2 gas preferentially adsorb to the growing film surface over residual water vapor. Consequently, the effects of P H 2 O on the crystal growth are reduced

  9. Determination of micro amounts of praseodymium by analogue derivative spectrophotometry

    International Nuclear Information System (INIS)

    Ishii, Hajime; Satoh, Katsuhiko.

    1986-01-01

    Derivative spectrophotometry using the analogue differentiation circuit was applied to the determination of praseodymium at the ppm level. By the proposed method, in which the second or fourth derivative spectrum of the characteristic absorption band of praseodymium(III) at 444 nm is measured, as little as 3 ppm of praseodymium can be determined directly and easily even in the presence of large amounts of other rare earths without any prior separation. Interferences from neodymium, samarium, dysprosium, holmium and erbium ions which have characteristic absorption bands around 444 nm can easily be removed by utilizing the isosbestic point in the derivative spectra of praseodymium(III) and the interfering rare earth(III). (author)

  10. Physicochemical and Electrical Properties of Praseodymium Oxides

    Directory of Open Access Journals (Sweden)

    Sergio Ferro

    2011-01-01

    Full Text Available The industrial research is continuously looking for novelties that could improve the applied processes, increasing the yields, lowering the costs, or improving the performances. In industrial electrochemistry, one more aspect is the stability of electrode materials, which is generally balanced by the catalytic activity: the higher the latter, the lower the former. A compromise has to be found, and an optimization is often the result of new ideas that completely change the way of thinking. Praseodymium-oxide-based cathodes have been proved to be quite interesting devices: the hydrogen evolution reaction is guaranteed by the presence of a noble metal (platinum and/or rhodium, while the stability and poisoning resistance seem to be strongly improved by the presence of lanthanide oxides.

  11. PrB{sub 7}{sup -}. A praseodymium-doped boron cluster with a Pr{sup II} center coordinated by a doubly aromatic planar η{sup 7}-B{sub 7}{sup 3-} ligand

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Teng-Teng; Jian, Tian; Wang, Lai-Sheng [Department of Chemistry, Brown University, Providence, RI (United States); Li, Wan-Lu; Chen, Xin; Li, Jun [Department of Chemistry and Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Tsinghua University, Beijing (China)

    2017-06-06

    The structure and bonding of a Pr-doped boron cluster (PrB{sub 7}{sup -}) are investigated using photoelectron spectroscopy and quantum chemistry. The adiabatic electron detachment energy of PrB{sub 7}{sup -} is found to be low [1.47(8) eV]. A large energy gap is observed between the first and second detachment features, indicating a highly stable neutral PrB{sub 7}. Global minimum searches and comparison between experiment and theory show that PrB{sub 7}{sup -} has a half-sandwich structure with C{sub 6v} symmetry. Chemical bonding analyses show that PrB{sub 7}{sup -} can be viewed as a Pr{sup II}[η{sup 7}-B{sub 7}{sup 3-}] complex with three unpaired electrons, corresponding to a Pr (4f{sup 2}6s{sup 1}) open-shell configuration. Upon detachment of the 6s electron, the neutral PrB{sub 7} cluster is a highly stable Pr{sup III}[η{sup 7}-B{sub 7}{sup 3-}] complex with Pr in its favorite +3 oxidation state. The B{sub 7}{sup 3-} ligand is found to be highly stable and doubly aromatic with six delocalized π and six delocalized σ electrons and should exist for a series of lanthanide M{sup III}[η{sup 7}-B{sub 7}{sup 3-}] complexes. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Effect of praseodymium dopants on the optical, crystallinity and electrochemical properties of poly(vinylalcohol) films fayez

    International Nuclear Information System (INIS)

    Ali, M.; Amwar, Z.M.

    2005-01-01

    Pure Poly(vinylalcohol) (Pva) films and doped with Praseodymium (Pr) in the concentration range of 5-30% weight/weight (w/w) were prepared by a casting technique. Optical transmission measurements were performed on the prepared samples, where an interesting feature is the enhancement of the transmission over 100% due to the incorporation of the Pr in the Pva films. The refractive indices of the studied doped films were general lower than that of the pure Pva. On adding Pr to the Pva the films become more crystalline due to the coordination of the lanthanide metal ion (Pr) to the Oxygen of the Pva side chain. The doped Pva samples exhibit different electrochemical behaviour through the cyclic voltammetry (C V) and square wave voltammetry (Sv) than the pure Pva sample. It was found that the corrosion behavior of the doped Pva films in the seawater is less than the pure Pva in the same environment

  13. Optical absorption and fluorescence studies of praseodymium ion in chloroborophosphate glasses

    International Nuclear Information System (INIS)

    Sharma, Y.K.; Tandon, S.P.

    1998-01-01

    Full text: The interest in optical absorption and fluorescence studies of rare earth ions in glassy materials is increasing continuously in connection with laser research and related application. The absorption and fluorescence spectra of praseodymium ion in chloroborophosphate glasses have been recorded at room temperature. The chloroborophosphate glass specimens having composition in mob.% Na 2 0 (26.08), B 2 0 3 (14.57), P 2 0 5 (44.85), ZnCl 2 (14.50), Pr 6 0 11 (R) [R= 0.0,0.1 and 0.2 moi.%] have been prepared by melt quenching technique. The spectra consists of seven absorption bands and three fluorescence bands. The observed optical spectra are discussed in terms of energy state and the intensity of the transitions. The various energy interaction parameters like Slater-Condon, Lande', Racah and bonding parameters have been computed. Judd-Ofeit intensity parameters and laser parameters have also been computed. These results shows that praseodymium doped chloroborophosphate glass specimen can be considered as good hosts for laser applications

  14. Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

    Science.gov (United States)

    Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

    2018-02-26

    Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

  15. Gallium-containing hydroxyapatite for potential use in orthopedics

    International Nuclear Information System (INIS)

    Melnikov, P.; Teixeira, A.R.; Malzac, A.; Coelho, M. de B.

    2009-01-01

    A novel material that may be recommended for grafts and implants stimulating bone growth has been obtained by introducing gallium ions (up to 11.0 mass%) into crystalline lattice of hydroxyapatite. The doping was carried out using gallium nitrate and sodium gallate solutions. In both cases, lattice parameters of gallium-doped hydroxyapatite are identical to those of pure synthetic hydroxyapatite. Gallium does not replace calcium as a result of heterovalent substitution and consequently produces no distortions in the framework of hydroxyapatite matrix. It remains strongly fixed in the form of solid solution of intercalation. According to scanning electron microscopy images gallium insertion does not cause any morphological alterations in hydroxyapatite structure and the product developed meets physico-chemical criteria for biomaterial to be employed in orthopedic practice and local handling of traumatic injuries. Its future usage opens the opportunity to enhance osteosynthesis and calcium retention in loco.

  16. Praseodymium - A Competent Dopant for Luminescent Downshifting and Photocatalysis in ZnO Thin Films

    Science.gov (United States)

    Narayanan, Nripasree; Deepak, N. K.

    2018-05-01

    Highly transparent and conducting Zinc oxide (ZnO) thin films doped with Praseodymium (Pr) were deposited on glass substrates by using the spray pyrolysis method. The X-ray diffraction (XRD) analysis revealed the polycrystallinity of the deposited films with a hexagonal wurtzite structure, whereas the energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the incorporation of Pr in the films. The optical energy gap decreased by Pr doping due to the merging of the conduction band with the impurity bands formed within the forbidden gap. The room temperature photoluminescence spectra of the Pr-doped film showed enhancement of visible emission, suggesting efficient luminescent downshifting. The photocatalytic activity of the Pr-doped films is higher than that of undoped films due to the effective suppression of the rapid recombination of the photo-generated electron-hole pairs. The impurity levels formed within the forbidden gap act as efficient luminescent centers and electron traps, which lead to luminescent downshifting and enhanced photocatalytic activity.

  17. Theoretical study of the magnetic heat capacity of praseodymium metal

    International Nuclear Information System (INIS)

    Glenn, R.L.

    1976-01-01

    The heat capacity of praseodymium metal at low temperatures is calculated using a valence change model. The effect of the presence of a small temperature-dependent and field-dependent percentage of 4+ ions is computed using crystalfield techniques. Good agreement with the experimentally determined values is obtained for polycrystalline and single-crystal praseodymium in zero field and various other fields up to 30 koe. In addition, the effects of selected exchange models on the heat capacity and susceptibility are computed. The model is shown to be compatible with both the parallel and perpendicular susceptibilities

  18. Calibration curves for quantifying praseodymium by UV-VIS

    International Nuclear Information System (INIS)

    Gonzalez M, R.; Lopez G, H.; Rojas H, A.

    2007-01-01

    The UV-Vis spectroscopic technique was used to determine the absorption bands depending on the concentration from the praseodymium solutions at pH3. Those more appropriate were in the wavelength of 215 nm, for concentrations of 0.0001-0.026 M, of 481nm, 468 nm and 443 nm, for concentrations of 0.026-0.325 M, and of 589 nm, for concentrations of 0.026-0.65 M of the praseodymium. To these wavelengths the calibration curves were determined, which presented correlation coefficients between 0.9976 and 0.9999 except of the absorption of 589 nm that gave R 2 = 0.9014. (Author)

  19. Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film

    Directory of Open Access Journals (Sweden)

    Irzaman

    2009-01-01

    Full Text Available Thin films 10 % gallium oxide doped barium strontium titanate (BGST and 10 % tantalum oxide doped barium strontium titanate (BTST were prepared on p-type Si (100 substrates using chemical solution deposition (CSD method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200oC, 240oC, 280oC (low temperature for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0.632 nm, 0.564 nm, 0.487 nm for temperature 200oC, 240oC, 280oC, respectively, whereas the grain size (mean diameter are 238.4 nm, 219.0 nm, 185.1 nm for temperature 200oC, 240oC, 280oC, respectively. In fact, to increase annealing temperature from 200oC to 280oC would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature.

  20. Crystal and molecular structure of praseodymium pivalate adduct with α,α'-dipyridyl

    International Nuclear Information System (INIS)

    Pisarevskij, A.P.; Mitrofanova, R.D.; Frolovskaya, S.N.; Martynenko, L.I.

    1995-01-01

    Synthesis and X-ray diffraction analysis of praseodymium tris-pivalate adduct with α,α'-dipyridyl of PrPiv 3 Dipy composition were conducted. Coordination number of praseodymium atom equals 9 in central-symmetrical dimeric molecule. Praseodymium atoms are connected by two bidentate-bridge and two tridentate-bridge-cyclic carboxylic groups. Molecules of α.α'-Dipy form five-membered chelate cycles. 5 refs., 1 scheme, 1 tab

  1. Investigations in gallium removal

    Energy Technology Data Exchange (ETDEWEB)

    Philip, C.V.; Pitt, W.W. [Texas A and M Univ., College Station, TX (United States); Beard, C.A. [Amarillo National Resource Center for Plutonium, TX (United States)

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  2. Investigations in gallium removal

    International Nuclear Information System (INIS)

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated

  3. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  4. Magnetic semiconductors for spinelectronics. Europium sulfide and magnetically doped gallium nitride; Magnetische Halbleiter zum Einsatz in der Spinelektronik. Europiumsulfid und magnetisch dotiertes Galliumnitrid

    Energy Technology Data Exchange (ETDEWEB)

    Keller, J.

    2007-07-02

    In this work, magnetic semiconductors were investigated. As ferromagnetic compound semiconductor, EuS was investigated as thin film system. Particular attention was paid to the influence of the substrate temperature during growth on the sample properties. The samples grown and investigated here show an anomalous Hall effect. As diluted magnetic semiconductors (DMS), GaN films magnetically doped with Mn or Gd were investigated. In both material systems, ferromagnetism far above room temperature was demonstrated.While GaGdN shows a homogeneous magnetism, all ferromagnetic GaMnN samples show small clusters (phase separations). In addition, measurements of the optical absorption and the magnetic circular dichroism (MCD) were performed on the GaMnN samples. In the optical measurements, the Mn was identified as deep acceptor. At low temperatures, both the magneto-absorption and the MCD show a Zeeman-shift of an absorption band for all doping levels. The exchange energies between valence band and localized magnetic moments can be extracted from fits of the Brillouin function to the Zeeman shifts. This yields values between 1.4 eV and 1.7 eV for the lowest doping levels and between 1.7 eV and 2.1 eV for the highest doped sample. At low temperatures, no ferromagnetic behavior was found in the magneto-optical experiments. The signal is dominated by the localized Mn spin system. At room temperature, the MCD shows a ferromagnetic signature. At elevated temperatures, the signal from the Mn spin system is small enough that the influence of the clusters on the band structure of the host lattice becomes visible. Contrary to the GaMnN samples, the GaGdN films show a homogeneous magnetism. The magnetically doped GaN thin film systems investigated here exhibit different behavior. The exchange mechanism proposed for GaGdN leads to a homogeneous ferromagnetism and is similar to the magnetic exchange in the Eu chalcogenides. The interplay between this intra-atomic f-d exchange and the

  5. Spectroscopic properties of Pr -doped erbium oxalate crystals

    Indian Academy of Sciences (India)

    Spectroscopic properties of praseodymium ions-doped erbium oxalate ... solution with specific gravity 1.04 g/cm3 was mixed homogeneously with 0.5 M oxalic ... of concentrated nitric acid were transferred carefully and gently through the wall ...

  6. Photo catalytic Degradation of Organic Dye by Sol-Gel-Derived Gallium-Doped Anatase Titanium Oxide Nanoparticles for Environmental Remediation

    International Nuclear Information System (INIS)

    Arghya, N.B.; Sang, W.J.; Bong-Ki, M.

    2012-01-01

    Photo catalytic degradation of toxic organic chemicals is considered to be the most efficient green method for surface water treatment. We have reported the sol-gel synthesis of Gadoped anatase TiO 2 nanoparticles and the photo catalytic oxidation of organic dye into nontoxic inorganic products under UV irradiation. Photodegradation experiments show very good photo catalytic activity of Ga-doped TiO 2 nanoparticles with almost 90% degradation efficiency within 3 hrs of UV irradiation, which is faster than the undoped samples. Doping levels created within the bandgap of TiO 2 act as trapping centers to suppress the photo generated electron-hole recombination for proper and timely utilization of charge carriers for the generation of strong oxidizing radicals to degrade the organic dye. Photo catalytic degradation is found to follow the pseudo-first-order kinetics with the apparent 1 st-order rate constant around 1.3 x 10 -2 min -1 . The cost-effective, sol-gel-derived TiO 2 : Ga nanoparticles can be used efficiently for light-assisted oxidation of toxic organic molecules in the surface water for environmental remediation.

  7. Structural and constitutional studies of some cerium-praseodymium alloys

    International Nuclear Information System (INIS)

    Altunbas, M.; Harris, I.R.

    1980-01-01

    Room temperature X-ray diffraction studies on some powdered Ce-Pr alloys indicate that the face-centred-cubic (fcc) structure extends from 0 to 65% Pr and the double hexagonal (dhcp) structure from 66 to 100% Pr, after a heat treatment of 600 0 C for 2 h and quickly cooling to room temperature. Variations of atomic volume with composition in both ranges indicate that the volume difference between the fcc form of praseodymium and the dhcp form is similar to that observed for α(dhcp) and β(fcc) lanthanum, whereas extrapolation to 100% Ce from the dhcp range gave an atomic volume for the dhcp Ce appreciably in excess of the atomic volume of fcc γ-Ce. This volume expansion is consistent with a slight change of the effective valency of the cerium atoms in the dhcp solid solutions when compared with the γ-Ce but there is uncertainty as to the precise atomic volume of dhcp β-Ce. The DTA studies indicate a narrow liquidus/solidus separation and the electrical resistivity and DTA measurements indicate a regular change with composition in the transition temperature of the high temperature bcc phase. For the dhcp-fcc transition there is a marked variation in the width of the hysteresis loop across the Ce-Pr system which can be correlated with the degree of plastic deformation involved in the transformation. There is a marked increase in the slope of the transition temperature with composition for the Pr-rich alloys and no such transition is observed for the praseodymium samples after one heating cycle. A possible dhcp-fcc transition, however, is indicated by the DTA traces of the commercially pure praseodymium sample on cycling with temperature and this has been attributed to the influence of interstitial impurities. (author)

  8. A new organically templated gallium(III)-doped chromium(III) fluorophosphite, (C2H10N2)[Ga0.98Cr0.02(HPO3)F3] hydrothermal synthesis, crystal structure and spectroscopic properties

    International Nuclear Information System (INIS)

    Fernandez-Armas, Sergio; Mesa, J.L.; Pizarro, J.L.; Lezama, Luis; Arriortua, M.I.; Rojo, T.

    2004-01-01

    A new organically templated fluoro-phosphite gallium(III)-doped chromium(III) with formula (C 2 H 10 N 2 )[Ga 0.98 Cr 0.02 (HPO 3 )F 3 ] has been synthesized by using mild hydrothermal conditions under autogeneous pressure. The crystal structure has been solved from X-ray single-crystal data. The compound crystallizes in the P2 1 2 1 2 1 orthorhombic space group, with the unit-cell parameters a=12.9417(7) A, b=9.4027(6) A, c=6.3502(4) A and Z=4. The final R factors were R1=0.022 (all data) and wR2=0.050. The crystal structure consists of [Ga 0.98 Cr 0.02 (HPO 3 )F 3 ] 2- anionic chains extended along the c-axis, with the ethylenediammonium cations placed in the cavities of the structure delimited by three different chains. The IR and Raman spectra show the characteristic bands of the phosphite oxoanion. The diffuse reflectance spectroscopy allowed us to calculate the Dq and Racah parameters of the Cr(III) cations in octahedral environment. The values are Dq=1375 cm -1 , B=780 cm -1 and C=3420 cm -1 . The polycrystalline ESR spectra performed at X and Q-bands show the signals belonging to the diluted Cr(III) cation in this phase. From the fit of the X-band ESR spectrum at 4.2 K, the calculated values of the axial (D) and rhombic (E) distortion parameters are 0.075 and 0.042 cm -1 , respectively, the components of the g-tensor being g x =1.98, g y =1.99 and g z =1.90

  9. High pressure structural studies on nanophase praseodymium oxide

    International Nuclear Information System (INIS)

    Saranya, L.; Chandra Shekar, N.V.; Amirthapandian, S.; Hussain, Shamima; Arulraj, A.; Sahu, P. Ch.

    2014-01-01

    The phase stability of nanocrystalline Pr 2 O 3 has been investigated under pressure by in-situ high pressure X-ray diffraction using Mao-Bell type diamond anvil cell. The ambient structure and phase of the praseodymium oxide have been resolved unambiguously using x-ray diffraction, SEM and TEM techniques. Under the action of pressure the cubic phase of the system is retained up to 15 GPa. This is unusual as other isostructural rare earth oxides show structural transformations even at lower pressures. From the best fit to the P–V data with the Murnaghan equation of state yields a bulk modulus of 171 GPa

  10. New even and odd parity levels of neutral praseodymium

    International Nuclear Information System (INIS)

    Syed, T I; Siddiqui, I; Shamim, K; Uddin, Z; Guthöhrlein, G H; Windholz, L

    2011-01-01

    The hyperfine (hf) structure of some spectral lines of the praseodymium atom has been investigated by the laser-induced fluorescence method in a hollow cathode discharge lamp. We report the discovery of 18 new energy levels of even parity and 22 new energy levels of odd parity and their magnetic dipole hf interaction constants A. Using these newly discovered levels, 268 lines were classified by means of laser spectroscopy, 97 of them by laser excitation and 171 via laser-induced fluorescence. In addition, 23 lines, observed in a Fourier transform spectrum, were classified by means of their wavenumbers and their hf patterns.

  11. Synthesis, Characterization and Thermal Diffusivity of Holmium and Praseodymium Zirconates

    OpenAIRE

    Stopyra M.; Niemiec D.; Moskal G.

    2016-01-01

    A2B2O7 oxides with pyrochlore or defected fluorite structure are among the most promising candidates for insulation layer material in thermal barrier coatings. The present paper presents the procedure of synthesis of holmium zirconate Ho2Zr2O7 and praseodymium zirconate Pr2Zr2O7 via Polymerized-Complex Method (PCM). Thermal analysis of precursor revealed that after calcination at relatively low temperature (700°C) fine-crystalline, single-phase material is obtained. Thermal diffusivity was me...

  12. Spectrophotometric determination of the first hydrolysis constant of praseodymium (III)

    International Nuclear Information System (INIS)

    Gonzalez M, R.; Lopez G, H.; Rojas H, A.

    2010-01-01

    The behavior of the trivalent ion praseodymium in 2 M of NaCl at 303 K and in CO 2 free conditions, was studied. Spectrophotometric titrations of the soluble species were used, in order to obtain the value of the first hydrolysis constant of Pr(III). The data obtained were treated with both the program Squad and by a graphic method, respectively. The result obtained using Squad was log*β 1 = -8.94 ± 0.03, while it was log*β 1 = -8.77 ± 0.03, when calculated graphically. These results are similar to the value obtained previously with the potentiometric method. (Author)

  13. In-situ gallium-doping for forming p{sup +} germanium-tin and application in germanium-tin p-i-n photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Dong, Yuan; D' Costa, Vijay Richard; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Vajandar, Saumitra; Lim, Sin Leng; Osipowicz, Thomas; Tok, Eng Soon [Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551 (Singapore)

    2016-04-21

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.

  14. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  15. Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

    Science.gov (United States)

    Knight, Sean; Mock, Alyssa; Korlacki, Rafał; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias

    2018-01-01

    The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal β-Ga2O3 is experimentally determined by the mid-infrared optical Hall effect to be (0.284 ± 0.013)m0 combining investigations on (010) and ( 2 ¯01 ) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped β-Ga2O3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m0. Within our uncertainty limits, we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results.

  16. New energy levels of praseodymium with large angular momentum

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shamim; Siddiqui, Imran; Gamper, Bettina; Syed, Tanweer Iqbal; Guthoehrlein, Guenter H.; Windholz, Laurentius [Inst. f. Experimentalphysik, Techn. Univ. Graz, Petersgasse 16, A-8010 Graz (Austria)

    2011-07-01

    The electronic ground state configuration of praseodymium {sup 59}Pr{sub 141} is [Xe] 4f{sup 3}6s{sup 2}, with ground state level {sup 4}I{sub 9/2}. Our research is mainly devoted to find previously unknown energy levels by the investigation of spectral lines and their hyperfine structures. In a hollow cathode discharge lamp praseodymium atoms and ions in ground and excited states are excited to high lying states by laser light. The excitation source is a tunable ring-dye laser system, operated with R6G, Kiton Red, DCM and LD700. A high resolution Fourier transform spectrum is used for selecting promising excitation wavelengths. Then the laser wavelength is tuned to a strong hyperfine component of the spectral line to be investigated, and a search for fluorescence from excited levels is performed. From the observed hyperfine structure we determine J-values and hyperfine constants A of the combining levels. This information, together with excitation and fluorescence wavelengths, allows us to find the energies of involved new levels. Up to now we have discovered large number of previously unknown energy levels with various angular momentum values. We present here the data (energies, parities, angular momenta J, magnetic hyperfine constants A) of ca. 40 new, until now unknown energy levels with high angular momentum values: 15/2, 17/2, 19/2, 21/2.

  17. An experimental study of praseodymium intermetallic compounds at low temperatures

    International Nuclear Information System (INIS)

    Greidanus, F.J.A.M.

    1982-01-01

    In this thesis the author studies the low temperature properties of praseodymium intermetallic compounds. In chapter 2 some of the techniques used for the experiments described in the subsequent chapters are discussed. A set-up to perform specific-heat experiments below 1 K and a technique for performing magnetic susceptibility measurments below 1 K, using a superconducting quantum interference device (SQUID) are described. Chapter 3 is devoted to the theory of interacting Pr 3+ ions. Both bilinear and biquadratic interactions are dealt with in a molecular-field approximation. It is shown that first as well as second-order phase transitions can occur, depending on the nature of the ground state, and on the ratio of magnetic to crystal-field interactions. In chapters 4, 5, 6 and 7 experimental results on the cubic Laves phase compounds PrRh 2 , PrIr 2 , PrPt 2 , PrRu 2 and PrNi 2 are presented. From inelastic neutron scattering experiments the crystalline electric field parameters of the above compounds are determined. In chapters 5 and 6 susceptibility, neutron-diffraction, hyperfine specific-heat, low-field magnetization, pulsed-field magnetization, specific-heat and resistivity measurements are presented. In chapter 7 the specific heat and differential susceptibility of PrNi 2 below 1 K are studied. Finally, in chapter 8 praseodymium intermetallic compounds with low-symmetry singlet ground states, and cubic compounds with magnetic doublet ground states are studied. (Auth.)

  18. Study of the structural and magnetic properties and gallium exchange phenomenon in a Mn-Ga alloy doped by Cr during the milling and annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Fariba, Nazari; Mohsen, Hakimi, E-mail: hakimi.m@yazd.ac.ir; Hossein, Mokhtari; Mohsen, Khajeh Aminian

    2015-05-15

    The effect of milling and annealing process on Cr doped Mn{sub 3}Ga nanocrystallite has been investigated. Phase determination analysis shows that Ga turning to get out of Mn-Ga structure and tend to make bonding to Cr and form Cr{sub 3}Ga{sub 4} product during milling process. Annealing of the new phases lead to decomposition of Cr{sub 3}Ga{sub 4} and formation of a new Mn-Ga phase in reverse direction, in the other words diffusion of Ga atoms occurs from Cr{sub 3}Ga{sub 4} to Mn phase and α-Mn and Cr{sub 3}Ga{sub 4} change to Mn{sub 3}Ga{sub 2} and Cr phases. The variation of coersivity, magnetization and magnetic state of different samples was explained according to the crystallite size of the present phases and grain boundary effects. It was also confirmed that formation of Mn-Cr clusters plays an important role in increase of saturation magnetization.

  19. Gallium scintigraphy in AIDS

    International Nuclear Information System (INIS)

    Van der Wall, Hans; Provan, I.; Murray, C.; Dwyer, M.; Jones, P.D.

    1990-01-01

    Gallium-67 scanning, indicated either for the elucidation of symptoms or for the assessment of appropriate therapy, was performed in 56 AIDS patients who underwent a total of 77 scans from 1986 to 1988. The age range of the patients was 13-66 years with an average age of 39 years. The majority of patients (95%) were male homosexuals. Gallium scanning has been applied to a wide spectrum of malignancies and to the detection of occult infections. Several mechanisms of uptake have been postulated for the localization of gallium. In general, gallium-67 acts as an analogue of the ferric ion, binding to transferrin soon after intravenous injection. It is believed that it is bound to transferrin receptors on the surface of tumour cells with subsequent intracellular transport. In infection, the association is probably with lactoferrin elaborated by polymorphonuclear cells and siderophores elaborated by bacteria. Gallium-67 is normally distributed to bone and bone marrow, liver, spleen, breast and bowel. In particular, the concentration in the ascending and transverse colon necessitates adequate bowel preparation. Lacrimal, nasopharyngeal and genital activity may also be seen. 11 refs., 2 tabs., 6 figs

  20. Hyperfine coupling in gadolinium-praseodymium alloys by specific heat measurements

    International Nuclear Information System (INIS)

    Michel, J.

    1969-01-01

    We have studied the hyperfine coupling in gadolinium-praseodymium alloys by specific heat measurements down to 0.3 K. In the first part we describe the apparatus used to perform our measurements. The second part is devoted to some theoretical considerations. We have studied in detail the case of praseodymium which is an exception in the rare earth series. The third part shows the results we have obtained. (author) [fr

  1. Metal Contacts to Gallium Arsenide.

    Science.gov (United States)

    Ren, Fan

    1991-07-01

    While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

  2. Synthesis and characterization of praseodymium-142 hydroxyapatite (142Pr-HA)

    International Nuclear Information System (INIS)

    Duyeh Setiawan; Daud Nurhasan

    2015-01-01

    The use of radioisotope of lanthanide group with range of beta energy 0.4 - 2.2 MeV has been renewed interest in nuclear medicine. Praseodymium-142 radioisotope ( 142 Pr, t 1/2 = 19.2 hours, E β = 2.16 MeV) is suitable for applications radiotherapy. Labelled of the hydroxyapatite (Ca 10 (PO 4 )6(OH) 2 ) can be used as carrier of radionuclide after injection in the body injection. This research aim as a preliminary studies to make praseodymium-142 hydroxyapatite ( 142 Pr-HA) as a radiotherapy agent. The optimum condition of praseodymium-142 hydroxyapatite synthesis by controlling several parameters such as the pH and the weight of hydroxyapatite was obtained from process by used the nonradioactive praseodymium. The optimum condition of hydroxyapatite by praseodymium are at pH 5 and weight ratio praseodymium : hydroxyapatite is 1 : 16. The percentage of labeling hydroxyapatite with 142 PrCl 3 was 99.50% and the radiochemical purity of 142 Pr-Ha was 95.20%. (author)

  3. Spectrophotometric determination of the first hydrolysis constant of praseodymium (III)

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez M, R.; Lopez G, H. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Rojas H, A., E-mail: hilario.lopez@inin.gob.m [Universidad Autonoma Metropolitana, Unidad Iztapalapa, Departamento de Quimica, Av. San Rafael Atlixco No. 186, Col. Vicentina, 09340 Mexico D. F. (Mexico)

    2010-07-01

    The behavior of the trivalent ion praseodymium in 2 M of NaCl at 303 K and in CO{sub 2} free conditions, was studied. Spectrophotometric titrations of the soluble species were used, in order to obtain the value of the first hydrolysis constant of Pr(III). The data obtained were treated with both the program Squad and by a graphic method, respectively. The result obtained using Squad was log*{beta}{sub 1}= -8.94 {+-} 0.03, while it was log*{beta}{sub 1}= -8.77 {+-} 0.03, when calculated graphically. These results are similar to the value obtained previously with the potentiometric method. (Author)

  4. Theory of singlet-doublet excitations in praseodymium

    International Nuclear Information System (INIS)

    Bak, P.

    1975-10-01

    The magnetic excitation spectrum in a paramagnetic singlet-doublet system is calculated using a diagrammatic high density expansion technique. The lowest order diagrams, which correspond to the random phase approximation (RPA), give a detailed description of the wave vector and temperature dependence of the four exciton modes in praseodymium in terms of a Hamiltonian including isotropic Heisenberg exchange interactions and anisotropic, dipolar-like interactions. The leading contributions to the linewidths of the excitations are obtained by extending the 1/Z expansion of the generalized susceptibility propagators one order beyond the random phase approximation. This damping corresponds to spin wave scattering on single-site fluctuations. The theoretical spectral functions are in detailed agreement with experiment

  5. High pressure structural studies on nanophase praseodymium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Saranya, L. [Jamal Mohamed College, Tiruchirapalli 620020, Tamil Nadu (India); Chandra Shekar, N.V., E-mail: chandru@igcar.gov.in [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu (India); Amirthapandian, S. [Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu (India); Hussain, Shamima [UGC-DAE-CSR node, Kokilamedu 603103, Tamil Nadu (India); Arulraj, A.; Sahu, P. Ch. [Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamil Nadu (India)

    2014-09-15

    The phase stability of nanocrystalline Pr{sub 2}O{sub 3} has been investigated under pressure by in-situ high pressure X-ray diffraction using Mao-Bell type diamond anvil cell. The ambient structure and phase of the praseodymium oxide have been resolved unambiguously using x-ray diffraction, SEM and TEM techniques. Under the action of pressure the cubic phase of the system is retained up to 15 GPa. This is unusual as other isostructural rare earth oxides show structural transformations even at lower pressures. From the best fit to the P–V data with the Murnaghan equation of state yields a bulk modulus of 171 GPa.

  6. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; Darroudi, Taghi; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our

  7. Aluminum and gallium nuclei as microscopic probes for pulsed electron-nuclear double resonance diagnostics of electric-field gradient and spin density in garnet ceramics doped with paramagnetic ions

    Science.gov (United States)

    Uspenskaya, Yu. A.; Mamin, G. V.; Babunts, R. A.; Badalyan, A. G.; Edinach, E. V.; Asatryan, H. R.; Romanov, N. G.; Orlinskii, S. B.; Khanin, V. M.; Wieczorek, H.; Ronda, C.; Baranov, P. G.

    2018-03-01

    The presence of aluminum and gallium isotopes with large nuclear magnetic and quadrupole moments in the nearest environment of impurity ions Mn2+ and Ce3+ in garnets made it possible to use hyperfine and quadrupole interactions with these ions to determine the spatial distribution of the unpaired electron and the gradient of the electric field at the sites of aluminum and gallium in the garnet lattice. High-frequency (94 GHz) electron spin echo detected electron paramagnetic resonance and electron-nuclear double resonance measurements have been performed. Large difference in the electric field gradient and quadrupole splitting at octahedral and tetrahedral sites allowed identifying the positions of aluminum and gallium ions in the garnet lattice and proving that gallium first fills tetrahedral positions in mixed aluminum-gallium garnets. This should be taken into account in the development of garnet-based scintillators and lasers. It is shown that the electric field gradient at aluminum nuclei near Mn2+ possessing an excess negative charge in the garnet lattice is ca. 2.5 times larger than on aluminum nuclei near Ce3+.

  8. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  9. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  10. Collinear laser spectroscopy on radioactive praseodymium ions and cadmium ions

    International Nuclear Information System (INIS)

    Froemmgen, Nadja

    2013-01-01

    Collinear laser spectroscopy is a tool for the model independent determination of spins, charge radii and electromagnetic moments of nuclei in ground and long-lived isomeric states. In the context of this thesis a new offline ion source for high evaporating temperatures and an ion beam analysis system were implemented at the TRIGA-LASER Experiment at the Institute for Nuclear Chemistry at the University of Mainz. The main part of the thesis deals with the determination of the properties of radioactive praseodymium and cadmium isotopes by collinear laser spectroscopy at ISOLDE/CERN. The necessary test measurements for the spectroscopy of praseodymium ions have been conducted with the aforementioned offline ion source at the TRIGA-LASER experiment. The spectroscopy of the praseodymium ions was motivated by the observation of a modulation of the electron capture decay rates of hydrogen-like 140 Pr 58+ . The nuclear magnetic moment of the nucleus is, among others, required for the explanation of the so-called GSI Oscillations and has not been studied experimentally before. Additionally, the determined electron capture decay constant of hydrogen-like 140 Pr 58+ is lower than the one of helium-like 140 Pr 57+ . The explanation of this phenomenon requires a positive magnetic moment. During the experiment at the COLLAPS apparatus the magnetic moments of the neutron-deficient isotopes 135 Pr, 136 Pr and 137 Pr could be determined for the first time. Unfortunately, due to a too low production yield the desired isotope 140 Pr could not be studied.The systematic study of cadmium isotopes was motivated by nuclear physics in the tin region. With Z=48 two protons are missing for the shell closure and the isotopes extend from the magic neutron number N=50 to the magic neutron number N=82. The extracted nuclear properties allow tests of different nuclear models in this region. In this thesis the obtained results of the spectroscopy of the cadmium isotopes 106-124,126 Cd and their

  11. Gallium and copper radiopharmaceutical chemistry

    International Nuclear Information System (INIS)

    Green, M.A.

    1991-01-01

    Gallium and copper radionuclides have a long history of use in nuclear medicine. Table 1 presents the nuclear properties of several gallium and copper isotopes that either are used in the routine practice of clinical nuclear medicine or exhibit particular characteristics that might make them useful in diagnostic or therapeutic medicine. This paper will provide some historic perspective along with an overview of some current research directions in gallium and copper radiopharmaceutical chemistry. A more extensive review of gallium radiopharmaceutical chemistry has recently appeared and can be consulted for a more in-depth treatment of this topic

  12. Mechanical and Thermal Properties of Praseodymium Monopnictides: AN Ultrasonic Study

    Science.gov (United States)

    Bhalla, Vyoma; Kumar, Raj; Tripathy, Chinmayee; Singh, Devraj

    2013-09-01

    We have computed ultrasonic attenuation, acoustic coupling constants and ultrasonic velocities of praseodymium monopnictides PrX(X: N, P, As, Sb and Bi) along the , , in the temperature range 100-500 K using higher order elastic constants. The higher order elastic constants are evaluated using Coulomb and Born-Mayer potential with two basic parameters viz. nearest-neighbor distance and hardness parameter in the temperature range of 0-500 K. Several other mechanical and thermal parameters like bulk modulus, shear modulus, Young's modulus, Poisson ratio, anisotropic ratio, tetragonal moduli, Breazeale's nonlinearity parameter and Debye temperature are also calculated. In the present study, the fracture/toughness (B/G) ratio is less than 1.75 which implies that PrX compounds are brittle in nature at room temperature. The chosen material fulfilled Born criterion of mechanical stability. We also found the deviation of Cauchy's relation at higher temperatures. PrN is most stable material as it has highest valued higher order elastic constants as well as the ultrasonic velocity. Further, the lattice thermal conductivity using modified approach of Slack and Berman is determined at room temperature. The ultrasonic attenuation due to phonon-phonon interaction and thermoelastic relaxation mechanisms have been computed using modified Mason's approach. The results with other well-known physical properties are useful for industrial applications.

  13. The thermodynamic characteristics of vaporization of praseodymium triiodide

    Science.gov (United States)

    Motalov, V. B.; Kudin, L. S.; Markus, T.

    2009-03-01

    The vaporization of praseodymium triiodide was studied by high-temperature mass spectrometry. Monomeric (PrI3) and dimeric (Pr2I6) molecules and the PrI{4/-} and Pr2I{7/-} negative ions were recorded in saturated vapor over the temperature range 842-1048 K. The partial pressures of neutral vapor components were determined. The enthalpies of sublimation Δs H o(298.15 K) in the form of monomers (291 ± 10 kJ/mol) and dimers (400 ± 30 kJ/mol) were calculated by the second and third laws of thermodynamics. The equilibrium constants of ion-molecular reactions were measured and the enthalpies of the reactions determined. The enthalpies of formation Δf H o(298.15 K) of molecules and ions in the gas phase were calculated (-373 ± 11, -929 ± 31, -865 ± 25, and -1433 ± 48 kJ/mol for PrI3, Pr2I6, PrI{4/-}, and Pr2I{7/-}, respectively).

  14. Synthesis, Characterization and Thermal Diffusivity of Holmium and Praseodymium Zirconates

    Directory of Open Access Journals (Sweden)

    Stopyra M.

    2016-06-01

    Full Text Available A2B2O7 oxides with pyrochlore or defected fluorite structure are among the most promising candidates for insulation layer material in thermal barrier coatings. The present paper presents the procedure of synthesis of holmium zirconate Ho2Zr2O7 and praseodymium zirconate Pr2Zr2O7 via Polymerized-Complex Method (PCM. Thermal analysis of precursor revealed that after calcination at relatively low temperature (700°C fine-crystalline, single-phase material is obtained. Thermal diffusivity was measured in temperature range 25-200°C, Ho2Zr2O7 exhibits lower thermal diffusivity than Pr2Zr2O7. Additionally, PrHoZr2O7 was synthesized. The powder in as-calcined condition is single-phase, but during the sintering decomposition of solid solution took place and Ho-rich phase precipitated. This material exhibited the best insulating properties among the tested ones.

  15. Exchange, x-ray and IR spectral behaviour of lanthanum and praseodymium exchanged zeolite X

    International Nuclear Information System (INIS)

    Das, D.; Upreti, M.C.

    1995-01-01

    Exchange behaviour of lanthanum and praseodymium ions in zeolite X involves three steps: preferential exchange, intrazeolitic exchange and irreversible exchange. At room temperature , higher exchange has been observed with La(III) than with Pr(III) which is attributed to the smaller hydrosphere of lanthanum than praseodymium. IR spectra of these zeolites in KBr pellets show a shift in the major Si-O stretching vibration of 972 cm -1 to higher frequencies. Their x-ray diffraction patterns remain unchanged except a large decrease of the line intensities caused by the absorption of x-rays by heavy La(III) and Pr(III) ions. The present study reports the preparation and physicochemical properties of lanthanum and praseodymium exchanged zeolite X. (author). 12 refs., 3 figs., 3 tabs

  16. The isolation of 139Ce after production by a proton-induced nuclear reaction on praseodymium

    International Nuclear Information System (INIS)

    Van der Walt, T.N.; Vermeulen, C.

    2004-01-01

    A method, based on anion exchange chromatography, is presented for the isolation of 139 Ce after production by a proton-induced nuclear reaction on a thick praseodymium target. After bombardment the target is dissolved in nitric acid and 139 Ce oxidised to the Ce(IV) oxidation state with bromic acid. 139 Ce is then separated form the praseodymium by anion exchange chromatography on a Ag MP-1 resin column in a nitric acid - bromic acid mixture. 139 Ce is sorbed onto the resin column and praseodymium eluted with the acid mixture. The bromic acid is washed out of the column with nitric acid and 139 Ce finally eluted with dilute nitric acid containing sulphur dioxide

  17. Variable valence of praseodymium in rare-earth oxide solid solutions

    International Nuclear Information System (INIS)

    Kravchinskaya, M.V.; Merezhinskii, K.Y.; Tikhonov, P.A.

    1986-01-01

    Solid solutions of elevated praseodymium oxide content have interesting electrical properties, making them the basis for the manufacture of high-temperature electrically conducting materials. Establishment of the composition-structure-valence state relationships enables control of the material properties. The authors performed investigations using a thermogravimetric apparatus with an electronic microbalance of type EM-5-3M, and using x-ray phase analysis of powders (DRON-1 diffractometer, CuK /SUB alpha/ -radiation). The authors also studied the kinetics of praseodymium oxidation with a thermogravimetric apparatus under isothermal conditions. Evaluation of the results with the equation of Kolmogorov, Erofeev, and Avraam indicates that the process is limited by the chemical oxidation of praseodymium and not by diffusion

  18. Age hardening and creep resistance of cast Al–Cu alloy modified by praseodymium

    International Nuclear Information System (INIS)

    Bai, Zhihao; Qiu, Feng; Wu, Xiaoxue; Liu, Yingying; Jiang, Qichuan

    2013-01-01

    The effects of praseodymium on age hardening behavior and creep resistance of cast Al–Cu alloy were investigated. The results indicated that praseodymium facilitated the formation of the θ′ precipitates during the age process and improved the hardness of the Al–Cu alloy. Besides, praseodymium resulted in the formation of the Al 11 Pr 3 phase in the grain boundaries and among the dendrites of the modified alloy. Because of the good thermal stability of Al 11 Pr 3 phase, it inhibits grain boundary migration and dislocation movement during the creep process, which contributes to the improvement in the creep resistance of the modified alloy at elevated temperatures. - Highlights: • Pr addition enhances the hardness and creep resistance of the Al–Cu alloy. • Pr addition facilitates the formation of the θ′ precipitates. • Pr addition results in the formation of the Al11Pr3 phase in the Al–Cu alloy

  19. Spectral and luminescence properties of Cr(3+) ad Nd(3+) ions in gallium garnet crystals

    Science.gov (United States)

    Denisov, A. L.; Ostroumov, V. G.; Saidov, Z. S.; Smirnov, V. A.; Shcherbakov, I. A.

    1986-01-01

    The effective peak stimulated-emission cross section of chromium-doped gadolinium-scandium-gallium garnets (GSGG) has been determined to be 8.5 x 10 to the -21st sq cm at room temperature. The values of the energy-gap Delta E(2E-4T2) chromim fluorescence lifetime and the chromium to neodymium energy-transfer parameter C(DA) (Cr-Nd) are determined for several gallium garnets. Temperature-dependent absorption and luminescence spectra of neodymium-doped GGG and GSGG are reported and discussed in the context of their use as laser materials.

  20. The europium and praseodymium hydrolysis in a 2M NaCl environment

    International Nuclear Information System (INIS)

    Jimenez R, M.; Lopez G, H.; Solache R, M.; Rojas H, A.

    1998-01-01

    It was studied the europium and praseodymium hydrolysis in a 2M NaCl ion force environment at 303 K, through two methods: this one extraction with dissolvents (lanthanide-water-NaCl-dibenzoylmethane) in presence of a competitive ligand (diglycolic acid) and that one direct potentiometric titration, of soluble species, followed by a computer refining. The values of one or another techniques of the first hydrolysis constants obtained were similar, which demonstrates that the results are reliable. The set of data obtained on the stability constants of hydrolysis products allowed to draw up the distribution diagrams of chemical species, as europium as praseodymium in aqueous environment. (Author)

  1. Gallium--A smart metal

    Science.gov (United States)

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  2. Laser-diode pumped self-mode-locked praseodymium visible lasers with multi-gigahertz repetition rate.

    Science.gov (United States)

    Zhang, Yuxia; Yu, Haohai; Zhang, Huaijin; Di Lieto, Alberto; Tonelli, Mauro; Wang, Jiyang

    2016-06-15

    We demonstrate efficient laser-diode pumped multi-gigahertz (GHz) self-mode-locked praseodymium (Pr3+) visible lasers with broadband spectra from green to deep red for the first time to our knowledge. With a Pr3+-doped GdLiF4 crystal, stable self-mode-locked visible pulsed lasers at the wavelengths of 522 nm, 607 nm, 639 nm, and 720 nm have been obtained with the repetition rates of 2.8 GHz, 3.1 GHz, 3.1 GHz, and 3.0 GHz, respectively. The maximum output power was 612 mW with the slope efficiency of 46.9% at 639 nm. The mode-locking mechanism was theoretically analyzed. The stable second-harmonic mode-locking with doubled repetition frequency was also realized based on the Fabry-Perot effect formed in the laser cavity. In addition, we find that the polarization directions were turned with lasing wavelengths. This work may provide a new way for generating efficient ultrafast pulses with high- and changeable-repetition rates in the visible range.

  3. Molecular distribution and toxicity assessment of praseodymium by Spirodela polyrrhiza

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Ting; Su, Chunlei; Hu, Dan; Li, Feifei; Lu, Qianqian; Zhang, Tingting; Xu, Qinsong, E-mail: xuqinsong@njnu.edu.cn

    2016-07-15

    Highlights: • Pr was mainly bound to cellulose and pectin in Spirodela polyrrhiza. • Pr induced the change in C−O, C−H, and O−H stretching vibration by FTIR. • Pr induced per oxidation of unsaturated fatty acids in membrane lipids. • Pr could target the reaction center proteins D1 and D2. • The reduction in photo system II activity was detected under Pr exposure. - Abstract: Aquatic macrophytes are known to accumulate and bioconcentrate metals. In this study, the physiological, biochemical, and ultrastructural responses of Spirodela polyrrhiza to elevated concentrations of praseodymium (Pr), ranging from 0 to 60 μM, were investigated over 20 d exposure. The results showed that the accumulation of Pr in S. polyrrhiza occurred in a concentration-dependent manner. The accumulation of Pr in biomacromolecules decreased in the order of cellulose and pectin (65–69%), crude proteins (18–25%), crude polysaccharides (6–10%), crude lipids (3%–4%). Significant increases in malondialdehyde (MDA), and decreases in photosynthetic pigment, soluble protein, and unsaturated fatty acids showed that Pr induced oxidative stress. Inhibitory effects on photosystem II and the degradation of the reaction center proteins D1 and D2 were revealed by chlorophyll a fluorescence transients, immunoblotting, and damage to chloroplast ultrastructure. Significant increases in cell death were observed in Pr-treated plants. However, S. polyrrhiza can combat Pr induced oxidative injury by activating various enzymatic and non-enzymatic antioxidants. These results will improve understanding of the biological consequences of rare earth elements (REEs) contamination, particularly in aquatic bodies.

  4. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    International Nuclear Information System (INIS)

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-01-01

    The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .

  5. Study in aqueous solution of the praseodymium inclusion in β-cyclodextrin in 2 M of NaCl

    International Nuclear Information System (INIS)

    De la Cruz M, N.

    2013-01-01

    In the fission of uranium to produce electricity, generated between the fission products which are the lanthanides and actinides that at any given time may come into contact with aqueous media, because of this, praseodymium was including in the β-cyclodextrin in order to increase the solubility and stability of praseodymium by forming inclusion complexes Praseodymium-β-cyclodextrin (Pr-β-Cd). The inclusion study was conducted in a proportion of praseodymium and β-cyclodextrin. Infrared spectra, Raman and X-ray diffraction showed the presence of praseodymium and β-cyclodextrin in the inclusion complex, in both proportions. The analysis by scanning electron microscopy confirmed the inclusion of praseodymium in βcyclodextrin. In general, the results of characterization obtained by these techniques show the formation of the inclusion complex. Furthermore, the behaviour of praseodymium inclusion in the β-cyclodextrin was studied in 2 M NaCl at 303 K and free-CO 2 conditions. For this reason, we used two methods: spectrophotometric and potentiometric titration direct of praseodymium-β-cyclodextrin, the data were treated graphically and with the program SUPERQUAD, respectively. The values obtained for praseodymium by spectrophotometric method was: log β 1 = -8.75 calculated graphically and with the potentiometric method, using program SUPERQUAD were logβ 1,OH = -8.73 ± 0.01 logβ 1,2OH = -18.27 ± 0.16 and logβ 1,3OH = -26.44 ± 0.02 obtained simultaneously. (Author)

  6. Complex-formation of praseodymium and neodymium in non aqueous solutions

    International Nuclear Information System (INIS)

    Schuetz, R.

    1966-03-01

    Chlorides and acides of Neodymium(III) and Praseodymium(III) were prepared in waterfree Dimethylsulfoxide, Trimethylphosphate and Dimethylformamide. The amount and kinetics of solvatisation and dissociation in these solvents was measured with spectrophotometric, conductometric and potentiometric methods. (P.W.)

  7. Synthesis and investigation of saturated vapor pressure of lanthanum, praseodymium and neodymium tris-isopropylcyclopentadienyls

    International Nuclear Information System (INIS)

    Devyatykh, G.G.; Chernyaev, N.P.; Zverev, Yu.B.; Gavrishchuk, E.M.; Runovskaya, I.V.; Krupnova, Eh.F.; Chesnokova, S.G.

    1980-01-01

    Lanthanum, praseodymium and neodymium tris-isopropylcyclopentadienyls are synthesized with corresponding unhydrous chlorides in tetrahydrofuran solution. Saturated vapour pressure of substances obtained is studied in the 150-262 deg C range by the statistic method using a compensation zero-manometer. Vapour pressure of the compounds in question is shown to increase with the growth of the rare earth element number [ru

  8. Mechanical and thermal properties of praseodymium monochalcogenides and monopnictides under pressure

    International Nuclear Information System (INIS)

    Bhajanker, Sanjay; Srivastava, V.; Pagare, G.; Sanyal, S.P.

    2011-01-01

    In recent years, a great deal of interest has been focused on rare-earth chalcogenides and pnictides because they have numerous applications in technologies. The praseodymium chalcogenides have attracted great attention due to their potential application in spintronics, spin filtering devices, hyperfine enhanced nuclear cooling, study of combined electron and nuclear order phenomenon at very low temperature

  9. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  10. Lattice Dynamics of Gallium Phosphide

    International Nuclear Information System (INIS)

    Yarnell, J.L.; Warren, J.L.; Wenzel, R.G.; Dean, P.J.

    1968-01-01

    Dispersion curves for phonons propagating in the [100], [110], and [111] directions in gallium phosphide have been measured using a triple-axis neutron diffraction spectrometer operating in the constant-Q mode. The sample was a pseudo-single crystal which was prepared by gluing together 36 single crystal plates of gallium phosphide 1 to 2.5 cm in diameter and ∼0.07 cm thick. The plates were grown epitaxially on substrates of gallium arsenide or gallium phosphide, and aligned individually by neutron diffraction. Rocking curves for eight reflections symmetrically distributed in the plane of the experiment had full widths at half maximum in the range 0.52° - 0.58° and were approximately Gaussian in shape. Gallium phosphide crystallizes in the zinc blende structure. A group theoretic analysis of the lattice dynamics of this structure and a shell model fit to the measured dispersion curves are presented. Various optical properties of gallium phosphide are discussed in terms of the phonon dispersion curves. In particular, the phonons which assist indirect electronic transitions are identified as those at the zone boundary in the [100] direction (symmetry point X) in agreement with theoretical and experimental indications that the extrema of the conduction and valence bands are at X and Γ (center of the zone), respectively. The LO branches lie above the TO branches throughout the Brillouin zone in contradiction to the predictions of Keyes and Mitra. The shell model fit indicates that the charge on the gallium atom is negative. (author)

  11. Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

    Directory of Open Access Journals (Sweden)

    O. M. Hontaruk

    2015-04-01

    Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

  12. Prospects for recovering gallium from extracted coal

    Energy Technology Data Exchange (ETDEWEB)

    Ratynskiy, V M; Reznik, A M; Zekel, L A; Zharov, Yu N

    1979-01-01

    The authors conducted research in order to establish the physical-chemical mechanisms governing the behavior of rare and dispersed elements within the thermal treatment processes used to treat coal and enrichment waste. New means are proposed for obtaining concentrations of gallium. These methods are under consideration primarily for the isolation of gallium as a by-product during the production of aggloporite from coal waste. The authors examine in detail the results of research dealing with the transfer of gallium compounds in a solution, the extraction of gallium from solutions, the separation of impurities from gallium, and the isolation of gallium from extract. Utilizing research results, the authors determine the expenditure coefficient and costs for additives used to extract gallium from waste by-products. The realization of this gallium extraction process from those products having the best prospects for gallium content resulted in economic savings.

  13. Gallium Safety in the Laboratory

    International Nuclear Information System (INIS)

    Cadwallader, L.C.

    2003-01-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002

  14. ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY

    Science.gov (United States)

    2017-08-01

    AFRL-RY-WP-TR-2017-0167 ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY Burhan Bayraktaroglu Devices for Sensing Branch Aerospace...TITLE AND SUBTITLE ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER N/A 6...report summarizes the current status of the Ga2O3 technology based on published results on theoretical electronic structure, materials growth, and

  15. Gallium and imaging studies

    International Nuclear Information System (INIS)

    Vogel, H.C.

    1982-01-01

    The indications for the use of 67 Gallium imaging studies of the lungs are discussed. In spite of localization of 67 Ga in a large variety of neoplastic and inflammatory tissues, there is only limited application of the lung study in the differential diagnosis of pulmonary diseases. The chest radiograph will continue to be the principal tool for evaluation of pulmonary diseases. The 67 Ga-citrate scan serves as a study complementary to the chest radiograph, as it indicates the localization, extent and degree of activity of lung disease with greater accuracy than radiography. Gallium-67 scanning may be used in the evaluation of patients with lymphoreticular neoplasms, especially Hodgkin-disease and malignant lymphoma both during initial staging and in evaluation of the response to therapy. The 67 Ga-citrate scan is useful in the pre-operative evaluation of patients with lung cancer. Hilar and mediastinal lymphadenopathy are accurately revealed. The lung study is non-invasive and complementary to mediastinoscopy by showing from which glands a biopsy might be taken. Unsuspected extrathoracic secondaries may be shown up, as well as pulmonary metastases from malignancies elsewhere, although the metastases must be at least 1,5 cm in size. The 67 Ga lung scan is valuable in the evaluation of pulmonary infiltrates of suspicious infective etiology, the differentiation between pulmonary infection and pneumonia in selected cases, follow-up of sarcoid patients on corticosteroid therapy, evaluation of inflammatory activity of idiopathic pulmonary fibrosis and the early detection of neo-plastic or inflammatory diseases before the chest radiograph reveals abnormality, e.g. in diffuse carcinomatosis or Pneumocystis carinii-infection. The sensitivity of tumors to radiation or chemotherapy may be shown

  16. Structural variations in nanosized confined gallium

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Min Kai [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Tien Cheng [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Center for Micro/Nano Science of Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC (China); Charnaya, E.V., E-mail: charnaya@live.co [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Institute of Physics, St. Petersburg State University, St. Petersburg, Petrodvorets 198504 (Russian Federation); Sheu, Hwo-Shuenn [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Kumzerov, Yu.A. [A.F. Ioffe Physico-Technical Institute RAS, St. Petersburg, 194021 (Russian Federation)

    2010-03-29

    The complex crystalline structure of gallium under nanoconfinement was revealed by synchrotron radiation x-ray powder diffraction. Nanoconfinement was shown to stabilize delta-Ga which is metastable in bulk. Two new gallium phases named iota- and kappa-Ga were found upon cooling below room temperature. These crystalline modifications were stable and coexisted with known gallium phases. Correlations between confined gallium particle shapes and emergence of particular crystalline phases were observed. Melting and freezing temperatures for different gallium phases were obtained. Remarkable supercooling of liquid gallium was seen in 3.5 nm pores.

  17. Study of the potentiometric properties of spinel-type manganese oxide doped with gallium and anions Ga0.02Mn1.98O3.98X0.02 (X = S2− and F−) as selective sensor for lithium ion

    International Nuclear Information System (INIS)

    David-Parra, Diego N.; Bocchi, Nerilso; Teixeira, Marcos F.S.

    2015-01-01

    Highlights: • Investigated the influence of doping agents on the potentiometric response • Reduction of the unit cell size affected directly in the potentiometric performance of the electrode • Sensor performance increased in the order: Ga 0.02 Mn 1.98 O 4 > Ga 0.02 Mn 1.98 O 3.98 S 0.02 > Ga 0.02 Mn 1.98 O 3.98 F 0.02 . - Abstract: This paper describes the development of a selective lithium ion sensor based on spinel-type manganese oxide doped with gallium and anions (Ga 0.02 Mn 1.98 O 3.98 X 0.02 , where X = S 2− and F − ). Investigation was made of the influence of cationic and/or anionic doping agents on the potentiometric response of the sensor. Experimental parameters evaluated included the effect of the lithium concentration on activation of the sensor by cyclic voltammetry, the pH of the electrolyte solution, and the selectivity towards Li + compared to other alkali and alkaline-earth metal ions. There was an important influence of the unit cell size of the material on the linear range, detection limit, and selectivity of the sensor. Reduction in the size of the tunnel for insertion of the lithium in the porous structure of the oxide directly affected the potentiometric performance of the electrode. Sensor performance increased in the order: Ga 0.02 Mn 1.98 O 4 > Ga 0.02 Mn 1.98 O 3.98 S 0.02 > Ga 0.02 Mn 1.98 O 3.98 F 0.02 . The observed super-Nernstian response could be explained by a mixed potential arising from two equilibria (redox and ion exchange) in the spinel-type manganese oxide. Sensitivity and the influence of pH on the electrode response were directly related to the doping agents present in the oxide structure

  18. Crystal and molecular structure of praseodymium nitrate dipivalate adduct with o-phenanthroline

    International Nuclear Information System (INIS)

    Pisarevskij, A.P.; Mitrofanova, N.D.; Frolovskaya, S.N.; Martynenko, L.I.

    1995-01-01

    The paper deals with the synthesis and X-ray diffraction investigation of praseodymium nitrate dipivalate adduct with o-phenanthroline of PrPiv 2 (NO 3 )Phen 2 composition. The crystals are triclinic: a = 9.738(4), b = 11.860(5), c = 15.451(6) A, α = 91.80(2), β = 99.41(2), γ = 103.69(2) deg, sp. gr. P1, d cald = 1.490 g/cm 3 . The coordination number of praseodymium atom in a monomeric molecule equals 10, both carboxylate groups and nitrate ion are coordinated by the bidentate-cyclic method. Phenanthroline molecules are formed by five-membered chelate cycles in the process of coordination. 5 refs., 1 fig., 2 tab

  19. Synthesis of praseodymium allyl iodide complex and its use in piperilene polymerization

    International Nuclear Information System (INIS)

    Gajlyunas, G.A.; Biktimirov, R.Kh.; Khajrullina, R.M.; Marina, N.G.; Manakov, Yu.B.; Tolstikov, G.A.

    1987-01-01

    Synthesis, structure and catalytic properties of tetrahydrofuran praseodymium allyl iodine complex (1) are described and studied. Complex 1 is formed during interaction of allyl iodine with metal praseodymium (the molar ratio is 2:1) in THF at room temperature with 97% yield. It represents the solid powder-like substance of the light-brown colour with a pale green shade, being sensitive to moisture and oxygen and decomposing at temperature >120 deg. On the basis of the IR-spectroscopy data the supposition about the dimeric (or n-dimensional) complex structure is made. The complex prepared in combination with tributyl aluminium during piperylene polymerization gives a high-stereoregular and high-molecular polypiperylene

  20. Superconductivity and structure of gallium under nanoconfinement

    Energy Technology Data Exchange (ETDEWEB)

    Charnaya, E V; Tien, Cheng; Lee, Min Kai [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Kumzerov, Yu A [A F Ioffe Physico-Technical Institute RAS, St Petersburg, 194021 (Russian Federation)

    2009-11-11

    Superconductivity and crystalline structure were studied for two nanocomposites consisting of gallium loaded porous glasses with different pore sizes. The superconducting transition temperatures were found to differ from those in known bulk gallium modifications. The transition temperatures 7.1 and 6.7 K were ascribed to two new confined gallium structures, iota- and kappa-Ga, observed by synchrotron radiation x-ray powder diffraction. The evolution of superconductivity on decreasing the pore filling with gallium was also studied.

  1. A neutron polarisation analysis study of the 'central' peak in single-crystal praseodymium

    International Nuclear Information System (INIS)

    Burke, S.K.; Stirling, W.G.; McEwen, K.A.; Salford Univ.

    1981-01-01

    The technique of neutron polarisation analysis has been used to examine the broad 'central' peak in paramagnetic praseodymium. Measurements over the temperature range 1.2-25 K show that these peaks, observed at reciprocal space positions (Q 1 , 0, 2m + 1) with Q 1 = 0.11 tau 100 , are entirely magnetic in character. The relationship between these short-range magnetic correlations and the long-range antiferromagnetic ordering process is discussed. (author)

  2. First principle study of structural, electronic and fermi surface properties of aluminum praseodymium

    Science.gov (United States)

    Shugani, Mani; Aynyas, Mahendra; Sanyal, S. P.

    2018-05-01

    We present a structural, Electronic and Fermi surface properties of Aluminum Praseodymium (AlPr) using First-principles density functional calculation by using full potential linearized augmented plane wave (FP-LAPW) method within generalized gradient approximation (GGA). The ground state properties along with electronic and Fermi surface properties are studied. It is found that AlPr is metallic and the bonding between Al and Pr is covalent.

  3. Hydrogen inventory in gallium

    International Nuclear Information System (INIS)

    Mazayev, S.N.; Prokofiev, Yu.G.

    1994-01-01

    Investigations of hydrogen inventory in gallium (99.9%) were carried out after saturation both from molecular phase and from glow discharge plasma at room temperature, 370 and 520 K. Saturation took place during 3000 s under hydrogen pressure of 20 Pa, and ion flux was about 1x10 15 ions/cm 2 s with an energy about 400 eV during discharge. Hydrogen concentration in Ga at room temperature and that for 370 K by the saturation from gaseous phase was (2-3)x10 14 cm -3 Pa -1/2 . Hydrogen concentration at temperature 520 K increased by five times. Inventory at room temperature for irradiation from discharge was 7x10 16 cm -3 at the dose about 3x10 18 ions/cm 2 . It was more than inventory at temperature 520 K by four times and more than maximum inventory from gaseous phase at 520 K by a factor of 10. Inventory increased when temperature decreased. Diffusion coefficient D=0.003 exp(-2300/RT) cm 2 /s, was estimated from temperature dependence. ((orig.))

  4. Gallium arsenide injection lasers

    International Nuclear Information System (INIS)

    Thompson, G.H.B.

    1975-01-01

    The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

  5. Thermal analysis of sulfide Ge-Ga glasses doped by praseodymium

    Czech Academy of Sciences Publication Activity Database

    Drabik, M.; Kozak, T.; Ležal, Dimitrij; Poulain, M.; Kalužný, J.

    2002-01-01

    Roč. 67, č. 1 (2002), s. 223-227 ISSN 1418-2874 Institutional research plan: CEZ:AV0Z4032918 Keywords : glass transition * Pr dopand * sulfide Ge-Ga glasses Subject RIV: CA - Inorganic Chemistry Impact factor: 0.598, year: 2002

  6. Gallium scintigraphy in Hansen's disease

    International Nuclear Information System (INIS)

    Braga, F.J.H.N.; Sao Paulo Univ., SP; Araejo, E.B.; Camargo, E.E.; Tedesco-Marchesi, L.C.M.; Rivitti, M.C.M.; Bouladour, H.; Galle, P.

    1991-01-01

    Gallium 67 imaging was used in 12 patients with documented Hansen's disease undergoing treatment or not in an attempt to determine the pattern of the disease. Diagnosis was confirmed by histopathology in all patients. The Mitsuda reaction was seen in all patients. Specific nuclear studies were performed when needed to evaluate particular organs better. Gallium 67 images show homogeneous, diffuse and moderate accumulation over the entire skin surface (except for the face) of untreated patients with multibacillary disease. The face skin in these cases presented homogeneous, diffuse but very marked uptake of gallium. Internal organ involvement was variable. There was a very good correlation among clinical, scintigraphical, immunological and histopathological data. The pattern of the body skin ('skin outlining') and face skin ('beard distribution') may be distinct for untreated patients with multibacillary leprosy. (orig.)

  7. Medical Applications and Toxicities of Gallium Compounds

    Directory of Open Access Journals (Sweden)

    Christopher R. Chitambar

    2010-05-01

    Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  8. Low-Temperature Processed Ga-Doped ZnO Coatings from Colloidal Inks

    KAUST Repository

    Della Gaspera, Enrico; Bersani, Marco; Cittadini, Michela; Guglielmi, Massimo; Pagani, Diego; Noriega, Rodrigo; Mehra, Saahil; Salleo, Alberto; Martucci, Alessandro

    2013-01-01

    We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transparent in the visible and absorb in the near-infrared. Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in a

  9. Ultrabroadband terahertz characterization of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely, aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by using THz-TDS from 0.5 to 18 THz. The complex conductivities were accurately calculated using...

  10. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

    International Nuclear Information System (INIS)

    Tanaka, Akiyo

    2004-01-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

  11. Potential effects of gallium on cladding materials

    International Nuclear Information System (INIS)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented

  12. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  13. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  14. Effect of silica surface coating on the luminescence lifetime and upconversion temperature sensing properties of semiconductor zinc oxide doped with gallium(III) and sensitized with rare earth ions Yb(III) and Tm(III).

    Science.gov (United States)

    Li, Yuemei; Li, Yongmei; Wang, Rui; Zheng, Wei

    2018-02-26

    Optical sensing of temperature by measurement of the ratio of the intensities of the 700 nm emission and the 800 nm emission of Ga(III)-doped ZnO (GZO) nanoparticles (NPs) and of GZO NPs coated with a silica shell are demonstrated at 980 nm excitation. It is found that the relative sensitivity of SiO 2 @Yb/Tm/GZO is 6.2% K -1 at a temperature of 693 K. This is ~3.4 times higher than that of Yb/Tm/GZO NPs. Obviously, the SiO 2 shell structure decreases the rate of the nonradiative decay. The decay time of the 800 nm emission of the Yb/Tm/GZO NPs (15 mol% Ga; 7 mol% Yb; 0.5 mol% Tm) displays a biexponential decay with a dominant decay time of 148 μs and a second decay time of ~412 μs. The lifetime of the Yb/Tm/GZO NPs at 293 K, and of the SiO 2 @Yb/Tm/GZO NPs are ~412 μs. Both the Yb/Tm/GZO and SiO 2 @Yb/Tm/GZO can be used up to 693 K. These results indicate that the SiO 2 shell on the Yb/Tm/GZO is beneficial in terms of sensitivity and resolution. Graphical abstract The enhancement the decay time and thermal sensitivity in the SiO 2 @Yb/Tm/GZO shell@core structure have been studied compared to the Ga(III)-doped Yb/Tm-doped ZnO (Yb/Tm/GZO). The SiO 2 @Yb/Tm/GZO have good thermal accuracy up to 693 °C.

  15. Enhancing the electron transfer and band potential tuning with long-term stability of ZnO based dye-sensitized solar cells by gallium and tellurium as dual-doping

    International Nuclear Information System (INIS)

    Akin, Seckin; Erol, Erdinc; Sonmezoglu, Savas

    2017-01-01

    A series of ZnO nanoparticles with Ga and Te dual-doping were successfully synthesized by using a facile sol–gel route, and their performance as the photoanode material in DSSCs was employed for the first time. The effects of simultaneously Ga–Te dopants into ZnO host (Ga x Te 1-x ZnO where the values of x ranging from 0 to 1 mol % with increments of 0.25 mol %) on the structural, optical, morphological, and compositional properties of the resulting samples were characterized via XRD, Raman, UV–vis–NIR spectrometer, PL, BET, AFM, FE–SEM, EDX, and XPS measurements. The incorporation of Ga–Te enlarges the surface area of the photoanodes, leading to higher dye-loading capability. Moreover, the PL intensity of pure ZnO drastically decreases by Ga–Te dopants, which demonstrates the reduction of oxygen vacancies, indicating the slow recombination of photoinduced charge carriers. Owing to the doping effect of Ga–Te, the energy conversion efficiencies of the DSSCs based on these photoanodes lie in the range of 4.79–7.08%, which is higher than that of pure ZnO (3.53%). This improvement of efficiency can be mainly ascribed to the combined effects of faster electron transport rate, retarded charge recombination, enhanced dye adsorption capability, longer electron lifetime as well as shifted negatively of conduction band edge in dual-doped ZnO films. Furthermore, it is noteworthy that after 1200 h, the degraded Ga 0.25 Te 0.75 ZnO device still shows 86% of their initial efficiency. This study provides a strategy for constructing self-powered systems using a device such as Ga x Te 1-x ZnO based DSSC described here for the first time.

  16. Muon spin relaxation and rotation studies of the filled skutterudite alloys praseodymium osmium ruthenium antimonide and praseodymium lanthanum osmium antimonide

    Science.gov (United States)

    Shu, Lei

    Some filled skutterudite compounds have recently been found to exhibit very interesting properties. The first Pr-based heavy-fermion superconductor, PrOs4Sb12, is an intriguing material due to the unusual properties of both its normal and superconducting states. Comprehensive muon spin rotation and relaxation studies and magnetic susceptibility measurements, described in this dissertation, have been performed to investigate the microscopic properties of PrOs4Sb12 and its Ru and La doped alloys. The temperature dependence of penetration depth measured in the vortex state of PrOs4Sb12 using transverse-field muon spin rotation (TF-muSR) is weaker than those measured by radiofrequency measurements. A scenario based on two-band superconductivity in PrOs4Sb 12, is proposed to resolve this difference. TF-muSR experiments also suggest the suppression of superfluid density with Ru doping, probably due to impurity scattering. In addition, magnetic susceptibility data as well as analysis of the muSR data in PrOs4Sb12 reveal a nearly linear relation of mu+ Knight shift vs. magnetic susceptibility. This suggests that the muon charge does not affect the crystalline electric field splitting of Pr3+ near neighbors. Additional evidence comes from the fact that the superconducting transition temperature Tc measured from muSR is consistent with the bulk superconducting values. Zero-field muon spin relaxation (ZF-muSR) experiments have been carried out in the Pr(Os1-xRux) 4Sb12 and Pr1-yLayOs 4Sb12 alloy systems to investigate the time-reversal symmetry (TRS) breaking found in an earlier ZF-muSR study of the end compound PrOs 4Sb12. The results from measurements at KEK, Japan, suggest that Ru doping is considerably more efficient than La doping in suppressing TRS breaking superconducting in PrOs4Sb12. However, we think that the spontaneous local field that indicates TRS breaking detected by ZF-muSR may depend on sample quality if those fields are from inhomogeneity in the

  17. Gallium nitride at the millennial transition

    International Nuclear Information System (INIS)

    Pankovo, J.I.

    2000-01-01

    The properties of gallium nitride were uncovered in the early years of exploratory research and endowed with negative electron affinity that could be used to make efficient cold cathodes and even dynodes for electron multipliers. GaN has another property i.e. polar nature of the crystal which makes this material piezo-electric and has non-linear optical properties. The piezo-electric properties led to new piezo electric effect may cause interfacial charge. The non-uniform distribution of acceptors, there is also presence of threading and other dislocation in GaN. Defects reappear where two adjacent overgrowth merge, but the good lateral overgrow region is large enough to make lasers. Injection lasers benefit from strong electrical and optical environment. This was achieved by using quantum wells of InGaN in GaN and this can be doped with rare earth elements to exploit the atomic transition between core levels in these elements. The emission efficiency of electrically excited Er in GaN is nearly temperature incentive from 80K to room temperature. An other application of GaN is as a heterojunction emitter for a bi-polar transistor (HBT) that can operate at high temperatures. (A.B.)

  18. Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Farid, Hafiz Muhammad Tahir, E-mail: tahirfaridbzu@gmail.com [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ahmad, Ishtiaq; Ali, Irshad [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ramay, Shahid M. [College of Science, Physics and Astronomy Department, King Saud University, P.O. Box 2455, 11451 Riyadh (Saudi Arabia); Mahmood, Asif [Chemical Engineering Department, College of Engineering, King Saud University, Riyadh (Saudi Arabia); Murtaza, G. [Centre for Advanced Studies in Physics, GC University, Lahore 5400 (Pakistan)

    2017-07-15

    Highlights: • Magnesium based spinel ferrites were successfully synthesized by sol-gel method. • Dielectric constant shows the normal spinel ferrites behavior. • The dc conductivity are found to decrease with increasing temperature. • The samples with low conductivity have high values of activation energy. • The Impedance decreases with increasing frequency of applied field. - Abstract: Spinel ferrites with nominal composition MgPr{sub y}Fe{sub 2−y}O{sub 4} (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz–3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole–Cole plots were used to separate the grain and grain boundary’s effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary’s resistance as compared to the grain’s resistance. As both AC conductivity and Cole–Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe{sub 2}O{sub 4} exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

  19. Comparative studies of praseodymium(III) selective sensors based on newly synthesized Schiff's bases

    International Nuclear Information System (INIS)

    Gupta, Vinod K.; Goyal, Rajendra N.; Pal, Manoj K.; Sharma, Ram A.

    2009-01-01

    Praseodymium ion selective polyvinyl chloride (PVC) membrane sensors, based on two new Schiff's bases 1,3-diphenylpropane-1,3-diylidenebis(azan-1-ylidene)diphenol (M 1 ) and N,N'-bis(pyridoxylideneiminato) ethylene (M 2 ) have been developed and studied. The sensor having membrane composition of PVC: o-NPOE: ionophore (M 1 ): NaTPB (w/w; mg) of 150: 300: 8: 5 showed best performances in comparison to M 2 based membranes. The sensor based on (M 1 ) exhibits the working concentration range 1.0 x 10 -8 to 1.0 x 10 -2 M with a detection limit of 5.0 x 10 -9 M and a Nernstian slope 20.0 ± 0.3 mV decade -1 of activity. It exhibited a quick response time as <8 s and its potential responses were pH independent across the range of 3.5-8.5.The influence of the membrane composition and possible interfering ions have also been investigated on the response properties of the electrode. The sensor has been found to work satisfactorily in partially non-aqueous media up to 15% (v/v) content of methanol, ethanol or acetonitrile and could be used for a period of 3 months. The selectivity coefficients determined by using fixed interference method (FIM) indicate high selectivity for praseodymium(III) ions over wide variety of other cations. To asses its analytical applicability the prepared sensor was successfully applied for determination of praseodymium(III) in spiked water samples.

  20. Structural properties of alkaline sodium lead fluoride borate glasses incorporated with Praseodymium ion

    Science.gov (United States)

    Lenkennavar, Susheela K.; Madhu, A.; Eraiah, B.; Kokila, M. K.

    2018-05-01

    The effect of different alkaline and Pr ions on the density and structure of Na2O-PbO-MO-B2O3 (M represents Ba/Ca/Sr) has been investigated using X-ray diffraction (XRD), infrared spectrophotometer (FTIR). The amorphous phase has been identified based on X-ray diffraction analysis. The Praseodymium oxide plays the role as a glass-modifier and influences on BO3↔BO4 conversion. The same effect is also observed in density and molar volume variation due to non bridging oxygen's (NBO) created when BO3 units are converted.

  1. Experimental investigation of the stability diagram for Paul traps in the case of praseodymium ions

    International Nuclear Information System (INIS)

    Koczorowski, W.; Szawiola, G.; Walaszyk, A.; Buczek, A.; Stefanska, D.; Stachowska, E.

    2006-01-01

    The present paper describes an investigation of non-linear resonances of praseodymium ion clouds stored in a Paul trap as a function of the storage parameters. These have been observed in traps with different ring electrode diameters. In these different traps the resonances occur for different values of the operating parameters. Discrepancies with the approximation model for one ion have been found. The intensity of the fluorescence signal and the Doppler half width have been recorded as a function of one of the storage parameters: q. We use our results to optimize the fluorescence signal of the stored ions, which is especially useful in the case of the double-resonance method.

  2. X-ray fluorescence analysis of praseodymium oxide/oxalate for rare earth impurities

    International Nuclear Information System (INIS)

    Chandola, L.C.; Mohile, A.N.

    1976-01-01

    A method for the determination of lanthanum, cerium, neodymium and samarium oxides in praseodymium oxide is described. The sample in the oxalate form is mixed with boric acid binder in the weight ratio of 1:1 and pressed into a pellet. The pellet is irradiated by X-rays from a tungsten tube and fluorescent X-rays are dispersed by a LiF (200) crystal in a Philips semiautomatic X-ray fluorescence spectrometer. The intensity of the characteristic X-rays of the impurity elements is measured by a flow proportional counter at selected 20 angles. The minium determination limit is 0.01% for all impurities. (author)

  3. Investigation of the hyperfine structure of Praseodymium-transitions using laser spectroscopy

    International Nuclear Information System (INIS)

    Shamim Khan

    2011-01-01

    A comprehensive knowledge of the electron levels in an atom is one of the prerequisite for understanding the electron-electron and electron-nucleus interactions inside an atom and for the classification of the atomic spectrum of an element. The spin-orbit interaction is the largest relativistic effect and is responsible for the fine structure splitting in an atom. The hyperfine structure splitting of the fine structure atomic energy levels arise as a result of the interaction between spinning and orbiting electrons and electromagnetic multipole nuclear moments. The electronic ground state configuration of praseodymium 59 Pr 141 is [Xe] 4f 3 6s 2 , with ground state level 4 I 9/2 . Because of its 5 outer electrons Praseodymium has a high density of energy levels which give rise to an extremely line rich emission spectrum. Due to this fact praseodymium serves as an efficient testing ground for hyperfine structure studies. The thesis is mainly devoted to the finding of previously unknown energy levels by the investigation of spectral lines and their hyperfine structures. In a hollow cathode discharge lamp praseodymium atoms and ions in ground and excited states are excited to high lying states by laser light. The excitation source is a tunable ring-dye laser system, operated with Stilbene 3, Rhodamine 6G, Kiton Red, DCM and LD 700. A high resolution Fourier Transform spectrum is used for extracting excitation wavelengths. Then the laser wavelength is tuned to a strong hyperfine component of the spectral line to be investigated, and a search for fluorescence from excited levels is performed. From the observed hyperfine structure pattern, J-values and hyperfine interaction constants A of the combining levels are determined. This information, together with excitation and fluorescence wavelengths, allows us to find the energies of the involved levels. During the course of this dissertation 313 new energy levels of Pr I and 4 new energy levels of Pr II were discovered

  4. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    International Nuclear Information System (INIS)

    Dehkordi, Arash Mehdizadeh; Bhattacharya, Sriparna; Darroudi, Taghi; Alshareef, Husam N.; Tritt, Terry M.

    2015-01-01

    Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO 3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr 2 O 3 versus Pr 6 O 11 ) on the synthesis and electronic transport in Pr-doped SrTiO 3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO 3 ceramics and provide new insight on further improvement of the thermoelectric power factor

  5. New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

    KAUST Repository

    Dehkordi, Arash Mehdizadeh

    2015-02-07

    Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr2O3 versus Pr6O11) on the synthesis and electronic transport in Pr-doped SrTiO3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO3 ceramics and provide new insight on further improvement of the thermoelectric power factor.

  6. Adsorption configuration of magnesium on wurtzite gallium nitride surface using first-principles calculations

    International Nuclear Information System (INIS)

    Yan Han; Gan Zhiyin; Song Xiaohui; Chen Zhaohui; Xu Jingping; Liu Sheng

    2009-01-01

    First-principles calculations of magnesium adsorption at the Ga-terminated and N-terminated {0 0 0 1} basal plane wurtzite gallium nitride surfaces have been carried out to explain the atomic-scale insight into the initial adsorption processes of magnesium doping in gallium nitride. The results reveal that magnesium adsorption on N-terminated surfaces is preferred than that on Ga-terminated surfaces. Furthermore, the surface diffusivity of magnesium atom on the N-terminated surface is much lower than that on the Ga-terminated surface, which is due to both the larger average adsorption energies and the lower adsorption distance on N-terminated surface than that on Ga-terminated surface. The results indicate that the p-type doping on the Ga-terminated surface will be better distributed than that on the N-terminated surface.

  7. Gallium-67 scintigraphy and the Heart

    International Nuclear Information System (INIS)

    Garayt, D.

    1987-01-01

    Although gallium-67 was initially used for tumor imaging, clinical studies suggested its potential use as a method of detecting occult inflammatory lesions. The demonstration of diffuse myocardial uptake of gallium-67 during Lyme disease myocarditis is consistent with a pattern of diffuse myocarditis as seen in sarcoid myocarditis. Two cases are presented. A critical review of the various applications of gallium-67 scintigraphy to myocardium investigation is carried out [fr

  8. Aluminium, gallium, indium and thallium

    International Nuclear Information System (INIS)

    Brown, Paul L.; Ekberg, Christian

    2016-01-01

    Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

  9. Collector for recovering gallium from weapons plutonium

    International Nuclear Information System (INIS)

    Philip, C.V.; Anthony, R.G.; Chokkaram, S.

    1998-09-01

    Currently, the separation of gallium from weapons plutonium involves the use of aqueous processing using either solvent extraction of ion exchange. However, this process generates significant quantities of liquid radioactive wastes. A Thermally Induced Gallium Removal process, or TIGR, developed by researchers at Los Alamos National Laboratories, is a simpler alternative to aqueous processing. This research examined this process, and the behavior of gallium suboxide, a vapor that is swept away by passing hydrogen/argon over gallium trioxide/plutonium oxide heated at 1100 C during the TIGR process. Through experimental procedures, efforts were made to prevent the deposition of corrosive gallium onto furnace and vent surfaces. Experimental procedures included three options for gallium removal and collection: (1) collection of gallium suboxide through use of a cold finger; (2) collection by in situ air oxidation; and (3) collection of gallium on copper. Results conclude all three collection mechanisms are feasible. In addition, gallium trioxide exists in three crystalline forms, and each form was encountered during each experiment, and that each form will have a different reactivity

  10. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  11. Impurity decoration of native vacancies in Ga and N sublattices of gallium nitride

    OpenAIRE

    Hautakangas, Sami

    2005-01-01

    The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the samples. In addition, the vacancy clusters are found to be present in significant concentrations in n-...

  12. Gallium and copper radiopharmaceutical chemistry

    International Nuclear Information System (INIS)

    Green, M.A.; John, E.K.; Barnhart, A.J.

    1990-01-01

    Several isotopes of gallium and copper exhibit nuclear properties that make them attractive for applications in nuclear medicine, most notably Ga-67, Ga-68, Cu-67 and Cu-62. Of these, gamma-emitting Ga-67 has historically found the greatest clinical use, based on the observation that tracer gallium(III) citrate rapidly produces Ga-67 transferrin upon intravenous injection and then slowly affords selective Ga-67 localization in sites of abscess and certain tumors. Copper-67 has received attention as a potential label for tissue-selective monoclonal antibodies, since its associated γ-photons can be used for external imaging and its β - -emissions could be used for radiation therapy. Positron-emitting gallium-68 and copper-62, being available from parent/daughter generator systems, have attracted interest as potential labels for radiopharmaceuticals used in positron emission tomography (PET) because they could reduce the dependence of this imaging technology on hospital-based cyclotrons. The 10 min. half-life of Cu-62 is particularly well-suited to the time frame of PET studies of tissue perfusion, an application for which Cu(II)-bis(thiosemicarbazone) derivatives appear promising. The 68 min. half-life of Ga-68 makes it appropriate for PET studies over longer imaging time spans

  13. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    Energy Technology Data Exchange (ETDEWEB)

    Grachev, V.; Meyer, M.; Malovichko, G. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Hunt, A. W. [Idaho Accelerator Center, Idaho State University, Pocatello, Idaho 83209 (United States)

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.

  14. Structural and dielectric characterization of praseodymium-modified lead titanate ceramics synthesized by the OPM route

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, Alexandre H., E-mail: alehp1@yahoo.com.br [LIEC-Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Department of Chemistry, UFSCar-Federal University of Sao Carlos, Rod. Washington Luis km 235, CP 676, Sao Carlos 13565-905, SP (Brazil); Souza, Flavio L., E-mail: fleandro.ufabc@gmail.com [Centro de Ciencias Naturais e Humanas, UFABC - Universidade Federal do ABC, Santo Andre 09210-170, SP (Brazil); Longo, Elson, E-mail: elson@iq.unesp.br [Department of Biochemistry, Chemistry Institute of Araraquara, UNESP - Sao Paulo State University, Rua Francisco Degni, CP 355, Araraquara 14801-907, SP (Brazil); Leite, Edson R., E-mail: derl@power.ufscar.br [LIEC-Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Department of Chemistry, UFSCar-Federal University of Sao Carlos, Rod. Washington Luis km 235, CP 676, Sao Carlos 13565-905, SP (Brazil); Camargo, Emerson R., E-mail: camargo@ufscar.br [LIEC-Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Department of Chemistry, UFSCar-Federal University of Sao Carlos, Rod. Washington Luis km 235, CP 676, Sao Carlos 13565-905, SP (Brazil)

    2011-10-17

    Highlights: {yields} Highly reactive nanosized powders of Pb(0.8)Pr(0.2)TiO(3) were obtained by the OPM route. {yields} Tetragonal phase was observed by X-ray diffraction and confirmed by Raman spectroscopy. {yields} SEM images showed powders partially sintered with particles of approximately 54 nm. {yields} Dielectric measurements show a normal behavior for the ferroelectric to paraelectric transition. - Abstract: Quasi-spherical nanoparticles of praseodymium-modified lead titanate powder (Pb{sub 0.80}Pr{sub 0.20}TiO{sub 3}) with an average size of 54.8 nm were synthesized successfully by the oxidant-peroxo method (OPM) and were used to prepare highly dense ceramic bodies which were sintered at 1100 and 1150 deg. C for 2 h. A tetragonal phase was identified in the powder and ceramic samples by X-ray powder diffraction and FT-Raman spectroscopy at room temperature. The fractured surface of the ceramic sample showed a high degree of densification with fairly uniform grain sizes. Dielectric constants measured in the range of 30-300 deg. C at different frequencies (120 Hz and at 1, 10 and 100 kHz) indicated that samples with 20 mol% praseodymium showed normal ferroelectric behavior regardless of the sintering temperature.

  15. Structural and dielectric characterization of praseodymium-modified lead titanate ceramics synthesized by the OPM route

    International Nuclear Information System (INIS)

    Pinto, Alexandre H.; Souza, Flavio L.; Longo, Elson; Leite, Edson R.; Camargo, Emerson R.

    2011-01-01

    Highlights: → Highly reactive nanosized powders of Pb(0.8)Pr(0.2)TiO(3) were obtained by the OPM route. → Tetragonal phase was observed by X-ray diffraction and confirmed by Raman spectroscopy. → SEM images showed powders partially sintered with particles of approximately 54 nm. → Dielectric measurements show a normal behavior for the ferroelectric to paraelectric transition. - Abstract: Quasi-spherical nanoparticles of praseodymium-modified lead titanate powder (Pb 0.80 Pr 0.20 TiO 3 ) with an average size of 54.8 nm were synthesized successfully by the oxidant-peroxo method (OPM) and were used to prepare highly dense ceramic bodies which were sintered at 1100 and 1150 deg. C for 2 h. A tetragonal phase was identified in the powder and ceramic samples by X-ray powder diffraction and FT-Raman spectroscopy at room temperature. The fractured surface of the ceramic sample showed a high degree of densification with fairly uniform grain sizes. Dielectric constants measured in the range of 30-300 deg. C at different frequencies (120 Hz and at 1, 10 and 100 kHz) indicated that samples with 20 mol% praseodymium showed normal ferroelectric behavior regardless of the sintering temperature.

  16. The role of praseodymium substituted ions on electrical and magnetic properties of Mg spinel ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Farid, Muhammad Tahir, E-mail: tahirfaridbzu@gmail.com; Ahmad, Ishtiaq; Kanwal, Muddassara; Murtaza, Ghulam; Ali, Irshad; Khan, Sajjad Ahmad

    2017-04-15

    Spinel ferrites with composition MgPr{sub y}Fe{sub 2−y}O{sub 4} (y=0.0, 0.025, 0.05, 0.075, 0.10) were successfully synthesized using sol-gel auto-combustion technique. The structural prisoperties of a prepared sintered powder were characterized with the help of X-ray Diffraction (XRD) and then also by using Scanning electron microscopy (SEM). Electrical measurements demonstrate that resistivity and activation energy increases with the Praseodymium substitution while dc resistivity decreases with the rise of temperature showing the semiconductor nature of the synthesized ferrites. Remanence and the saturation magnetization (M{sub s}) decrease while coercivity (H{sub c}) also increases with the increase in praseodymium contents. Anisotropic constant is observed to exhibit similar behavior as H{sub C}. The above mentioned parameters suggest that the synthesized samples are favorable for microwave absorbing purposes. - Highlights: • Magnesium based spinel ferrites were successfully synthesized by sol-gel method. • The spinel phase has been observed in all samples. • The dc resistivity are found to increase with increasing Pr content • The samples with high resistivity have high values of activation energy. • The Ms Decreases with increasing Pr contents while Hc increases.

  17. Gallium 67 uptake in thymic rebound

    International Nuclear Information System (INIS)

    Hurst, R.; Sabio, H.; Teates, C.D.

    1988-01-01

    We have reported a case of localized thymic enlargement and uptake of gallium 67 in a child who had received antineoplastic chemotherapy. The enlarged thymus showed normal histology, a picture consistent with thymic rebound after nonspecific stress. This case further demonstrates the need to consider thymic rebound as a cause of gallium 67 uptake in children with neoplastic diseases

  18. Gallium-67 citrate scan in extrapulmonary tuberculosis

    Energy Technology Data Exchange (ETDEWEB)

    Lin Wanyu [Taichung Veterans General Hospital (Taiwan). Dept. of Nuclear Medicine; Hsieh Jihfang [Chi-Mei Foundation Hospital, Tainan (Taiwan)

    1999-07-01

    Aim: Whole-body gallium scan was performed to evaluate the usefulness of gallium scan for detecting extrapulmonary tuberculosis (TB) lesions. Methods: Thirty-seven patients with extrapulmonary TB were included in this study. Four patients were found to have two lesions. Totally, 41 lesions were identified, including 19 TB arthritis, 8 spinal TB, 5 TB meningitis, 3 TB lymphadenopathy, 2 TB pericarditis, 1 TB peritonitis, 1 intestinal TB, 1 skin TB and 1 renal TB. Results: Of the 41 extrapulmonary TB lesions, gallium scan detected 32 lesions with a sensitivity of 78%. All the patients with TB meningitis showed negative gallium scan. When the five cases of TB meningitis were excluded, the detection sensitivity of gallium scan increased to 88.9% (32/36). Conclusion: Our data revealed that gallium scan is a convenient and useful method for evaluating extrapulmonary TB lesions other than TB-meningitis. We suggest that gallium scan be included in the clinical routine for patients with suspected extrapulmonary TB. (orig.) [German] Ziel: Es wurden Ganzkoerper-Gallium-Szintigramme angefertigt, um den Nutzen der Gallium-Szintigraphie zur Erfassung von extrapulmonalen Tuberkuloseherden (TB) zu erfassen. Methoden: 37 Patienten mit extrapulmonaler TB wurden eingeschlossen. 4 Patienten hatten 2 Laesionen. Insgesamt wurden 41 Laesionen identifiziert, hierunter 19 TB-Arthritis, 8 spinale TB, 5 TB-Meningitis, 3 TB-Lymphadenopathie, 2 TB-Perikarditis, 1 TB-Peritonitis, 1 intestinale TB, 1 Haut-TB und eine Nieren-TB. Ergebnisse: Von den 41 extrapulmonalen TB-Herden erfasste die Gallium-Szintigraphie 32 Herde mit einer Sensitivitaet von 78%. Alle Patienten mit TB-Meningitis zeigten einen negativen Gallium-Scan. Wenn die 5 Faelle mit TB-Meningitis ausgeschlossen wurden, stieg die Sensitivititaet der Gallium-Szintigraphie auf 88,9% (32/36). Schlussfolgerung: Die Daten zeigen, dass die Gallium-Szintigraphie eine einfache und nuetzliche Methode zur Erfassung extrapulmonaler TB-Herde ist

  19. Gallium Electromagnetic (GEM) Thrustor Concept and Design

    Science.gov (United States)

    Polzin, Kurt A.; Markusic, Thomas E.

    2006-01-01

    We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

  20. Magnetic and electrical properties of Pr-doped Bi(Pb)-Sr-Ca-Cu-O superconductors

    International Nuclear Information System (INIS)

    Malik, A.I.; Halim, S.A.; Mohammed, S.B.; Khalid, K.; Hassan, Z.A.

    1999-01-01

    The effect of Praseodymium doping on the electrical and magnetic properties of the bismuth-based superconductors has been investigated. The doping was done on the Calcium site ranging from x=0.00 to 0.10. For low doping percentages x<0.03, the 2223 phase still persists. However beyond this concentration the samples were dominated by 2212 phase. These results were obtained from the measurements of temperature dependence of electrical resistance and ac susceptibility of the samples. The magnetic behavior of the doping element, Pr, (a 4f rare earth magnetic element) seemed to have deteriorated the superconducting properties of the system by breaking the electron pairing mechanism. Pr doping also deteriorates the coupling of the superconducting rains, as observed by the abrupt shift of the loss peaks towards lower temperatures. (author)

  1. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

    2017-01-01

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  2. Gallium nitride on gallium oxide substrate for integrated nonlinear optics

    KAUST Repository

    Awan, Kashif M.

    2017-11-22

    Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

  3. Gallium determination in biological samples

    International Nuclear Information System (INIS)

    Stulzaft, O.; Maziere, B.; Ly, S.

    1980-01-01

    A sensitive, simple and time-saving method has been developed for the neutron activation analysis of gallium at concentrations around 10 -4 ppm in biological tissues. After a 24-hour irradiation in a thermal neutron flux of 2.8x10 13 nxcm -2 xs -1 and a purification by ion-exchange chromatography to eliminate troublesome elements such as sodium, iron and copper, the 72 Ga activity is measured with enough accuracy for the method to be applicable in animal physiology and clinical toxicology. (author)

  4. Thermodynamics of gallium arsenide electrodeposition

    International Nuclear Information System (INIS)

    Perrault, G.G.

    1986-01-01

    Gallium Arsenide is well known as a very interesting compound for photoelectrical devices. Up to now, it has been prepared mostly by high temperature technology, and the authors considered that it might be of interest to set up an electrodeposition technique suitable to prepare thin layers of this compound. A reaction sequence similar to the one observed for Cadmium Sulfide or Cadmium Telluride could be considered. In these cases, the metal chalcogenide is obtained from the precipitation of the metal ions dissolved in the solutions by the reduction product of the metalloidic compound

  5. Gallium Oxide Nanostructures for High Temperature Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Chintalapalle, Ramana V. [Univ. of Texas, El Paso, TX (United States)

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  6. A high open-circuit voltage gallium nitride betavoltaic microbattery

    International Nuclear Information System (INIS)

    Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

    2012-01-01

    A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63 Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm 2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63 Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery. (paper)

  7. Gallium-67 citrate scan in extrapulmonary tuberculosis

    International Nuclear Information System (INIS)

    Lin Wanyu

    1999-01-01

    Aim: Whole-body gallium scan was performed to evaluate the usefulness of gallium scan for detecting extrapulmonary tuberculosis (TB) lesions. Methods: Thirty-seven patients with extrapulmonary TB were included in this study. Four patients were found to have two lesions. Totally, 41 lesions were identified, including 19 TB arthritis, 8 spinal TB, 5 TB meningitis, 3 TB lymphadenopathy, 2 TB pericarditis, 1 TB peritonitis, 1 intestinal TB, 1 skin TB and 1 renal TB. Results: Of the 41 extrapulmonary TB lesions, gallium scan detected 32 lesions with a sensitivity of 78%. All the patients with TB meningitis showed negative gallium scan. When the five cases of TB meningitis were excluded, the detection sensitivity of gallium scan increased to 88.9% (32/36). Conclusion: Our data revealed that gallium scan is a convenient and useful method for evaluating extrapulmonary TB lesions other than TB-meningitis. We suggest that gallium scan be included in the clinical routine for patients with suspected extrapulmonary TB. (orig.) [de

  8. Thermal, infrared and X-ray studies on praseodymium and neodymium myristates

    International Nuclear Information System (INIS)

    Upadhyaya, S.K.; Sharma, P.S.

    1993-01-01

    The thermal decomposition of praseodymium and neodymium myristates has been studied both as a function of temperature and of time. The thermogravimetric analysis has shown that order of decomposition reaction is kinetically of zero order and the energy of activation for the decomposition process lies in the range of 10-15 kcal mol -1 . The IR results showed that lanthanide myristates have an ionic character. The X-ray analysis indicated that the zigzag chains of the fatty acid radical constituent of the soap molecules extend straight forward on both sides of each basal plane and the molecular axes of the soap molecules are somewhat inclined to the basal plane. (author). 5 refs., 2 tabs

  9. Investigation into complexing of phthalexone S with praseodymium ions and some aminoglycoside antibiotics

    International Nuclear Information System (INIS)

    Alykov, N.M.

    1981-01-01

    Complex formation of phthalexone S (Phth) with praseodymium ion and some aminoglycoside antibiotics (Ab) in aqueous ethanol solutions (1:1) has been examined photometrically at 619 mm. It has been shown that compounds with the ratios of Ab:Pr:Phth=1:2:8, 1:1:4, 1:1:3 are formed depending on the number of amino groups and structure of the antibiotics. The molar absorptivities and solubility products for the complexes have been calculated. The complex formation scheme is given. A procedure has been developed of determining 0.01-10 μg of antibiotics in 1 ml of a biological material with a relative error of less than 10% [ru

  10. Corrosion of Zn5Al and Zn55Al alloys with cerium, praseodymium and neodymium

    International Nuclear Information System (INIS)

    Alikhanova, S.D.

    2017-01-01

    The present work is devoted to corrosion of Zn5Al and Zn55Al alloys with cerium, praseodymium and neodymium. The purpose of present work is elaboration of optimal composition of zinc-aluminium alloys Zn5Al and Zn55Al alloyed by rare-earth metals of cerium subgroup which are used as anode covers for protection of steel from corrosion. Therefore, the regularities of change of corrosion-electrochemical properties in various corrosive mediums have been determined; processes mechanisms of high temperature oxidation of alloys in solid state have been studied; in the products of alloys oxidation their phase components have been defined and their role in the corrosion process have been revealed; the optimal compositions of zinc-aluminium alloys alloyed by rare earth metals, which are protected by two patents of the Republic of Tajikistan have been elaborated.

  11. Hyperfine structure measurements and discovery of new energy levels in neutral praseodymium

    Energy Technology Data Exchange (ETDEWEB)

    Imran, Siddiqui; Khan, Shamim; Syed, Tanweer Iqbal; Gamper, Bettina; Windholz, Laurentius [Inst. f. Experimentalphysik, Techn. Univ. Graz, Petersgasse 16, A-8010 Graz (Austria)

    2011-07-01

    We present here 14 even and 17 odd parity new energy levels of the neutral praseodymium atom. Free praseodymium atoms in ground and excited states are produced in a hollow cathode discharge lamp by cathode sputtering. The hyperfine structure (hfs) of the spectral lines is investigated by the method of laser induced fluorescence (LIF) spectroscopy. As an example of the method used we discuss briefly the finding of the new level at 27304.431 cm{sup -1}, even parity, J=9/2 and A=690(1) MHz. Laser excitation of the line at 6004.23 Aa is performed and a LIF signal is detected at fluorescence lines 5246.709, 5412.95, 5925.10, 6107.88, 6287.02, 6419.16, and 6620.63 A. The hfs is then recorded digitally and fitted to find reliable values of angular momentum J, magnetic and electric quadrupole hyperfine constants A and B for the combining fine structure levels. Assuming an unknown upper level, a lower level is searched in the data base of known levels, having the J and A values determined from the fit procedure. A level with 10654.11 cm{sup -1}, odd parity, J=7/2 and A=169(2) MHz is found. The energy of the upper level is calculated by adding the center of gravity wave number of the excited line to the energy of the lower level. The existence of the new level is checked by at least one additional laser excitation from another known lower level.

  12. Synthesis, characterization and thermal expansion studies on thorium-praseodymium mixed oxide solid solutions

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Srinivasan, T.G.; Vasudeva Rao, P.R.

    2010-01-01

    Full text: Thorium-praseodymium mixed oxide solid solutions containing 15, 25, 40 and 55 mole percent of praseodymia were synthesized by mixing the solutions of thorium nitrate in water and praseodymium oxide (Pr 6 O 11 ) in conc. HNO 3 . Subsequently, their hydroxides were co-precipitated by the addition of aqueous ammonia. Further the precipitate was dried at 50 deg C, calcined at 600 deg C for 4 hours and sintered at 1200 deg C for 6 h in air. X-ray diffraction measurements were performed for phase identification and lattice parameter derivation. Single-phase fluorite structure was observed for all the compositions. Bulk and theoretical densities of solid solutions were also determined by immersion and X-ray techniques. Thermal expansion coefficients and percentage linear thermal expansion of the solid solutions were determined using high temperature X-ray diffraction technique in the temperature range 300 to 1700 K for the first time. The room temperature lattice constants estimated for above compositions are 0.5578, 0.5565, 0.5545 and 0.5526 nm, respectively. The mean linear thermal expansion coefficients for the solid solutions are 15.48 x 10 -6 K -1 , 18.35 x 10 -6 K -1 , 22.65 x 10 -6 K -1 and 26.95 x 10 -6 K -1 , respectively. The percentage linear thermal expansions in this temperature range are 1.68, 1.89, 2.21 and 2.51 respectively. It is seen that the solid solutions are stable up to 1700 K. It is also seen that the effect and nature of the dopant are the important parameters influencing the thermal expansion of the ThO 2 . The lattice parameter of the solid solutions exhibited a decreasing trend with respect to praseodymia addition. The percentage linear thermal expansion of the solid solutions increases steadily with increasing temperature

  13. Gallium-67 scintigraphy in borderline lepromatous leprosy

    International Nuclear Information System (INIS)

    Mouratidis, B.; Lomas, F.E.

    1993-01-01

    A middle aged woman with a pyrexia of unknown origin was shown to have borderline lepromatous leprosy. Early gallium-67 scintigraphy demonstrated increased uptake in the subcutaneous tissues of the face and thighs. As a result of these findings skin biopsy was obtained from the right thigh which gave a diagnosis of borderline lepromatous leprosy. The authors have been unable to find other reports of gallium-67 scintigraphy in leprosy but the pattern of gallium-67 distribution should suggest the diagnosis. 5 refs., 1 fig

  14. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay; Lee, Jung-Yong; West, Jack; Peumans, Peter; Salleo, Alberto

    2011-01-01

    of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using

  15. Liquid praseodymium heat content by levitation calorimetry. [Sample size 0. 5 - 1. 5g; 1460 to 2289/sup 0/K

    Energy Technology Data Exchange (ETDEWEB)

    Stretz, L.A.; Bautista, R.G.

    1976-01-01

    The high-temperature heat content of liquid praseodymium was measured experimentally by the levitation calorimetry technique. The samples, ranging in size from 0.5 to 1.5 g, were simultaneously levitated and heated by a radiofrequency generator in an argon-helium mixture prior to being dropped into a conventional copper block drop calorimeter. Corrections were made for the convection and radiation losses during the fall of the sample from the levitation chamber into the calorimeter. The praseodymium data, from 1460 to 2289K, were fitted by the following equation where the indicated errors represent the average deviation of the experimental value from the value predicted by the equation: H/sub T/ - H/sub 298/./sub 15/ = (41.57 +- 0.29) (T - 1208) + (41733 +- 197) J/mol. (auth)

  16. Synthesis in aqueous medium and organic praseodymium complexes with ligands derived from Schiff base quinolinic. Characterization and physicochemical study

    International Nuclear Information System (INIS)

    Garcia G, A.

    2015-01-01

    It was investigated the coordination ability of the quinolinic Schiff base organic tetradentate quinolinic ligand (Q Schiff-(OH) 2 ) towards the trivalent praseodymium by UV/Vis spectrophotometric titration (St). By St, was studied the formed species between the Q Schiff-(OH) 2 ligand and the praseodymium nitrate salt in equimolar concentrations (5.86 x 10 -4 M: 5.22 x 10 -4 M) in methanol. The statistical analysis of the experimental results suggested three complexed species with 1Pr:3L, 1Pr:2L y 1Pr:1L stoichiometries. The predominant stoichiometries were the second and the latter. Based on these results and data from the scientific literature, the methodology for the syntheses of the complexes Q Schiff-(OH) 2 -Pr in aqueous-organic and organic media was established and a molar ratio M:L= 1:2 of praseodymium nitrate and the ligand was used. The new complexes were characterized by UV/Vis, Infrared, X-ray Photoelectron Spectroscopy (XP S), Diffuse Reflectance (Dr) and Thermogravimetric Analysis/Differential Scanning Calorimetry (TGA/DSC). Elemental analysis of C, N, O and Pr by XP S suggested 1Pr:2L:1Na (PrC 32 H 20 N 4 O 4 Na) stoichiometry of the complex synthesized by the aqueous-organic medium while for the complex synthesized by the organic medium it was 1Pr:3L (PrC 48 H 33 N 6 O 6 ). In the first case, the praseodymium ion charge was neutralized by the anionic ligands whose remaining charge was compensated by the sodium ion. In the second case, the ion charge was neutralized by the ligands. The minimum formula was Pr(Q Schiff) 2 Na for the pure coordination compound from the aqueous-organic medium and the minimum formula Pr(Q Schiff) 3 for that from the organic medium. XP S also indicated that the oxidation state of praseodymium ion was maintained. Both complexes were stable in methanol, ethanol and acetonitrile at least for 5 days. The photophysical properties of the studied complexes were evaluated by emission and excitation luminescence (fluorescence and

  17. On the complexing of phosphoric acid vinyl esters with praseodymium (3) and europium (3) nitrates in acetonitrile

    International Nuclear Information System (INIS)

    Goryushko, A.G.; Gololobov, Yu.G.; Boldeskul, A.E.; Oganesyan, A.S.; Yartsev, V.G.

    1990-01-01

    By the methods of electron, IR and PMR spectroscopy interaction of vinyl esters of phosphoric acid with praseodymium (3) and europium (3) nitrates in acetonitrile solutions has been studied. It is shown that the character of metal-ligand interaction is determined by chemical nature of the ligands: for a compound of ionic structure partially covalent bond is formed, and for a compound of betaine structure the interaction has mainly dipole character. Addition of molecule with betaine structure to praseodymium nitrate causes a change in geometry of Pr 3+ close surrounding and increase in its coordination number. The possibility of formation of the complex with metal-ligand ratio equal to 1:3 is shown

  18. Calibration curves for quantifying praseodymium by UV-VIS; Curvas de calibracion para cuantificar praseodimio por UV-VIS

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez M, R.; Lopez G, H.; Rojas H, A. [ININ, 52750 La Marquesa, Estado de Mexico (Mexico)]. e-mail: robertssd1199@yahoo.com.mx

    2007-07-01

    The UV-Vis spectroscopic technique was used to determine the absorption bands depending on the concentration from the praseodymium solutions at pH3. Those more appropriate were in the wavelength of 215 nm, for concentrations of 0.0001-0.026 M, of 481nm, 468 nm and 443 nm, for concentrations of 0.026-0.325 M, and of 589 nm, for concentrations of 0.026-0.65 M of the praseodymium. To these wavelengths the calibration curves were determined, which presented correlation coefficients between 0.9976 and 0.9999 except of the absorption of 589 nm that gave R{sup 2} = 0.9014. (Author)

  19. Gallium-67 activity in bronchoalveolar lavage fluid in sarcoidosis

    International Nuclear Information System (INIS)

    Trauth, H.A.; Heimes, K.; Schubotz, R.; von Wichert, P.

    1986-01-01

    Roentgenograms and gallium-67 scans and gallium-67 counts of BAL fluid samples, together with differential cell counts, have proved to be useful in assessing activity and lung involvement in sarcoidosis. In active pulmonary sarcoidosis gallium-67 scans are usually positive. Quantitation of gallium-67 uptake in lung scans, however, may be difficult. Because gallium-67 uptake and cell counts in BAL fluid may be correlated, we set out to investigate gallium-67 activity in BAL fluid recovered from patient of different groups. Sixteen patients with recently diagnosed and untreated sarcoidosis, nine patients with healthy lungs, and five patients with CFA were studied. Gallium-67 uptake of the lung, gallium-67 activity in the lavage fluid, SACE and LACE levels, and alpha 1-AT activity were measured. Significantly more gallium-67 activity was found in BAL fluid from sarcoidosis patients than in that from CFA patients (alpha = .001) or patients with healthy lungs (alpha = .001). Gallium-67 activity in BAL fluid could be well correlated with the number of lymphocytes in BAL fluid, but poorly with the number of macrophages. Subjects with increased levels of SACE or serum alpha 1-AT showed higher lavage gallium-67 activity than did normals, but no correlation could be established. High gallium-67 activity in lavage fluid may be correlated with acute sarcoidosis or physiological deterioration; low activity denotes change for the better. The results show that gallium-67 counts in BAL fluid reflects the intensity of gallium-67 uptake and thus of activity of pulmonary sarcoidosis

  20. NIM Realization of the Gallium Triple Point

    Science.gov (United States)

    Xiaoke, Yan; Ping, Qiu; Yuning, Duan; Yongmei, Qu

    2003-09-01

    In the last three years (1999 to 2001), the gallium triple-point cell has been successfully developed, and much corresponding research has been carried out at the National Institute of Metrology (NIM), Beijing, China. This paper presents the cell design, apparatus and procedure for realizing the gallium triple point, and presents studies on the different freezing methods. The reproducibility is 0.03 mK, and the expanded uncertainty of realization of the gallium triple point is evaluated to be 0.17 mK (p=0.99, k=2.9). Also, the reproducibility of the gallium triple point was compared with that of the triple point of water.

  1. Glutathione role in gallium induced toxicity

    African Journals Online (AJOL)

    Asim

    2012-01-26

    Jan 26, 2012 ... 1Department of Pharmaceutical Chemistry, Faculty of Pharmacy, Gomal University, D.I. Khan, ... Decrease in GSH level was dependant on gallium nitrate concentration. .... This 2 ml mixture sample was centrifuged at 1000.

  2. Properties of gallium lanthanum sulphide glass

    OpenAIRE

    Bastock, P.; Craig, C.; Khan, K.; Weatherby, E.; Yao, J.; Hewak, D.W.

    2015-01-01

    A series of gallium lanthanum sulphide (GLS) glasses has been studied in order to ascertain properties across the entire glass forming region. This is the first comprehensive study of GLS glass over a wide compositional range.

  3. Glutathione role in gallium induced toxicity

    African Journals Online (AJOL)

    Asim

    2012-01-26

    GSH) present in tissues. It is very important and interesting to study the reaction of gallium nitrate and glutathione as biomarker of glutathione role in detoxification and conjugation in whole blood components (plasma and ...

  4. Study of valence of cerium and praseodymium ions in Pr1-xCexO2 solid solutions

    International Nuclear Information System (INIS)

    Gartsman, K.G.; Kartenko, N.F.; Melekh, B.T.

    1990-01-01

    Effect of preparation conditions of Pr 1-x Ce x O 2 solid solutions on Ce and Pr ion valence within Pr 1-x Ce x O 2 system is studied. The data obtained enable to conclude that praseodymium may depending on annealing conditions change its state from Pr 3+ to Pr 4+ , while Ce 4+ is stable in Pr 1-x Ce x O 2 solid solutions

  5. Clinical applications of Gallium-68

    International Nuclear Information System (INIS)

    Banerjee, Sangeeta Ray; Pomper, Martin G.

    2013-01-01

    Gallium-68 is a positron-emitting radioisotope that is produced from a 68 Ge/ 68 Ga generator. As such it is conveniently used, decoupling radiopharmacies from the need for a cyclotron on site. Gallium-68-labeled peptides have been recognized as a new class of radiopharmaceuticals showing fast target localization and blood clearance. 68 Ga-DOTATOC, 8 Ga-DOTATATE, 68 Ga-DOTANOC, are the most prominent radiopharmaceuticals currently in use for imaging and differentiating lesions of various somatostatin receptor subtypes, overexpressed in many neuroendocrine tumors. There has been a tremendous increase in the number of clinical studies with 68 Ga over the past few years around the world, including within the United States. An estimated ∼10,000 scans are being performed yearly in Europe at about 100 centers utilizing 68 Ga-labeled somatostatin analogs within clinical trials. Two academic sites within the US have also begun to undertake human studies. This review will focus on the clinical experience of selected, well-established and recently applied 68 Ga-labeled imaging agents used in nuclear medicine. - Highlights: ► A summary of the emerging clinical uses of 68 Ga-based radiopharmaceuticals is provided. ► 68 Ga-PET may prove as or more clinically robust than the corresponding 18 F-labeled agents. ► 68 Ga-radiopeptides were studied for targeting of somatostatin receptors subtypes. ► 68 Ga-DOTATOC, 68 Ga-DOTATATE, 68 Ga-DOTANOC, are currently in clinical trials

  6. The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching

    International Nuclear Information System (INIS)

    Chekurov, N; Grigoras, K; Franssila, S; Tittonen, I; Peltonen, A

    2009-01-01

    We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000:1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines μm -1 with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15:1 (e.g. 600 nm high pillars 40 nm in diameter).

  7. Arsenates of rare-metals: electrometric investigations on praseodymium arsenates as a function of pH

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, S [Paraiba Univ., Joao Pessoa (Brazil). Dept. de Engenharia Quimica

    1982-01-01

    The stoichiometry of the compounds formed by the interaction of praseodymium chloride and different alkali arsenates (meta, pyro and ortho) at specific pH levels - 7.2, 8.3 and 11.1 - was investigated by electrometric techniques involving pH measurements and potentiometric and conductometric titrations. The inflections and breaks in the titration curves provide evidence for the formation of three praseodymium arsenates having the molecular formulae Pr/sub 2/O/sub 3/.3 As/sub 2/O/sub 5/, 2Pr/sub 2/O/sub 3/.3As/sub 2/O/sub 5/ and Pr2O/sub 3/.As/sub 2/O/sub 5/ in the vicinity of pH 4.8, 5.8 and 7.0, respectively. Analysis of the compounds by conventional methods (gravimetric, as oxide, for praseodymium; iodometric for arsenic) substantiate the results of the electrometric study

  8. Donor doping process and white light generation in CaMoO4 powders with multivalence Pr codoping

    International Nuclear Information System (INIS)

    Zhu Fang; Xiao Zhisong; Zhang Feng; Yan Lu; Huang Anping

    2011-01-01

    Both trivalent praseodymium (Pr 3+ ) and quadrivalent praseodymium (Pr 4+ ) were doped in molybdate powders. Visible emission from matrix was enhanced by multivalent Pr codoping. It was proposed that Pr 3+ ions was donor and supplied quasi-free electron when Pr 3+ took place the Pr 4+ sites. The result showed that multivalence codoping would be an effective way to enhance emission of CaMoO 4 . White light can be generated from Ca 0.98 Pr 0.02 MoO 4 powder via combination of broadband emissions originated from CaMoO 4 matrix and radiative transition of Pr 3+ . It showed warm white light with T c of 3450 K that implies promising application in white light emitting diodes (LEDs).

  9. Evaluating United States and world consumption of neodymium, dysprosium, terbium, and praseodymium in final products

    Science.gov (United States)

    Hart, Matthew

    This paper develops scenarios of future rare-earth-magnet metal (neodymium, dysprosium, terbium, and praseodymium) consumption in the permanent magnets used in wind turbines and hybrid electric vehicles. The scenarios start with naive base-case scenarios for growth in wind-turbine and hybrid-electric-vehicle sales over the period 2011 to 2020, using historical data for each good. These naive scenarios assume that future growth follows time trends in historical data and does not depend on any exogenous variable. Specifically, growth of each technological market follows historical time trends, and the amount of rare earths used per unit of technology remains fixed. The chosen reference year is 2010. Implied consumptions of the rare earth magnet metals are calculated from these scenarios. Assumptions are made for the material composition of permanent magnets, the market share of permanent-magnet wind turbines and vehicles, and magnet weight per unit of technology. Different scenarios estimate how changes in factors like the material composition of magnets, growth of the economy, and the price of a substitute could affect future consumption. Each scenario presents a different method for reducing rare earth consumption and could be interpreted as potential policy choices. In 2010, the consumption (metric tons, rare-earth-oxide equivalent) of each rare-earth-magnet metal was as follows. Total neodymium consumption in the world for both technologies was 995 tons; dysprosium consumption was 133 tons; terbium consumption was 50 tons; praseodymium consumption was zero tons. The base scenario for wind turbines shows there could be strong, exponential growth in the global wind turbine market. New U.S. sales of hybrid vehicles would decline (in line with the current economic recession) while non-U.S. sales increase through 2020. There would be an overall increase in the total amount of magnetic rare earths consumed in the world. Total consumption of each rare earth in the short

  10. Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

    Science.gov (United States)

    Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; Druce, R. L.

    1995-05-01

    The high gain effect was shown to be a threshold effect and was dependent on the photoactivation energy level. For the studied material, laser energy densities in the order of 10 mJ cm(sup - 2) for a laser pulse duration of 200 ps were needed to switch into the high gain mode. The observed supralinear behavior of the peak photoconductivity and the charge carrier lifetime can be accounted by the shifts in quasi Fermi levels and the occupancy of copper states within the forbidden gap. Numerical simulations were also presented that yielded quantitative values for the trapping cross sections and recombination center densities. From the perspective of applications, the GaAs:Si:Cu material had great potential for high-power repetitive switching and photodetection.

  11. Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Schoenbach, K.H.; Joshi, R.P.; Peterkin, F. [Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia 23529 (United States); Druce, R.L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    1995-05-15

    We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low-energy phototransistor application for the GaAs:Cu material system is presented. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  12. Polarity Control and Doping in Aluminum Gallium Nitride

    Science.gov (United States)

    2013-06-01

    Ladungsträger. Diese hohen Konzentrationen werden dadurch erklärt, dass im Bereich hoher Dotierungen die Formierungsenergien dieser Störstellen...elektrischen Widerstand führt. Des Weiteren wird im Rahmen dieser Arbeit gezeigt, dass das hier vorgestellte Modell zur Kontrolle des Einbaus von Defekten

  13. Microchip laser operation of Yb-doped gallium garnets

    Czech Academy of Sciences Publication Activity Database

    Serres, J.M.; Jambunathan, Venkatesan; Loiko, P.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Lucianetti, Antonio; Mocek, Tomáš; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F.

    2016-01-01

    Roč. 6, č. 1 (2016), s. 46-57 ISSN 2159-3930 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA ČR GA14-01660S Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : thermal-conductivity * crystal * temperature * Y 3 AL 5 O 12 * YAG * performance * CNGG Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.591, year: 2016

  14. 67Gallium • the D,etection and Localization

    African Journals Online (AJOL)

    1971-12-11

    Dec 11, 1971 ... gallium and its compounds was first aroused when it was noted that this element is contained .... MATERIALS AND METHODS. ;;'Gallium citrate was .... another in a patient with a pathological fracture of the right humerus that ...

  15. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  16. Normal vibrations in gallium arsenide

    International Nuclear Information System (INIS)

    Dolling, G.; Waugh, J.L.T.

    1964-01-01

    The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296 o K. The frequencies of normal modes of vibration propagating in the [ζ00], (ζζζ], and (0ζζ] crystal directions have been determined with a precision of between 1 and 2·5 per cent. A limited number of normal modes have also been studied at 95 and 184 o K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296 o K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10 12 c/s) for these modes (at 296 o K) have been assigned: T 8·02±0·08 and L 8·55±02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7·56 ± 008, TA 2·36 ± 0·015, LO 7·22 ± 0·15, LA 6·80 ± 0·06; (b) (0·5, 0·5, 0·5): TO 7·84 ± 0·12, TA 1·86 ± 0·02, LO 7·15 ± 0·07, LA 6·26 ± 0·10; (c) (0, 0·65, 0·65): optic 8·08 ±0·13, 7·54 ± 0·12 and 6·57 ± 0·11, acoustic 5·58 ± 0·08, 3·42 · 0·06 and 2·36 ± 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0·04 e. The frequency distribution function has been derived from one of the force models. (author)

  17. Normal vibrations in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Dolling, G; Waugh, J L T

    1964-07-01

    The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296{sup o}K. The frequencies of normal modes of vibration propagating in the [{zeta}00], ({zeta}{zeta}{zeta}], and (0{zeta}{zeta}] crystal directions have been determined with a precision of between 1 and 2{center_dot}5 per cent. A limited number of normal modes have also been studied at 95 and 184{sup o}K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296{sup o}K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10{sup 12} c/s) for these modes (at 296{sup o}K) have been assigned: T 8{center_dot}02{+-}0{center_dot}08 and L 8{center_dot}55{+-}02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7{center_dot}56 {+-} 008, TA 2{center_dot}36 {+-} 0{center_dot}015, LO 7{center_dot}22 {+-} 0{center_dot}15, LA 6{center_dot}80 {+-} 0{center_dot}06; (b) (0{center_dot}5, 0{center_dot}5, 0{center_dot}5): TO 7{center_dot}84 {+-} 0{center_dot}12, TA 1{center_dot}86 {+-} 0{center_dot}02, LO 7{center_dot}15 {+-} 0{center_dot}07, LA 6{center_dot}26 {+-} 0{center_dot}10; (c) (0, 0{center_dot}65, 0{center_dot}65): optic 8{center_dot}08 {+-}0{center_dot}13, 7{center_dot}54 {+-} 0{center_dot}12 and 6{center_dot}57 {+-} 0{center_dot}11, acoustic 5{center_dot}58 {+-} 0{center_dot}08, 3{center_dot}42 {center_dot} 0{center_dot}06 and 2{center_dot}36 {+-} 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0{center_dot}04 e. The

  18. Discovery of new Praseodymium I energy levels with help of green laser light

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Shamim; Siddiqui, Imran; Tanweer Iqbal, Syed; Windholz, Laurentius [Institute of Experimental Physics, Graz University of Technology, Petersgasse 16, A 8010 Graz (Austria)

    2012-07-01

    The hyperfine structure (hfs) of Praseodymium I spectral lines were experimentally investigated using LIF technique in a hollow cathode discharge lamp. We report here the investigation of 100 spectral lines which resulted in a discovery of 20 new energy levels of even and odd parity. The excitation source is a tunable ring-dye laser system, operated with Coumarin 102. The laser wavelength is tuned to a strong hyperfine component of the investigated spectral line, and fluorescence signals from excited levels are searched. The hfs of the investigated line is recorded by scanning the laser frequency across the investigated region. Magnetic hf interaction constant ''A'' and angular momentum ''J'' of the combining lower and upper levels involved in the formation of the line are evaluated. If one of the combining levels is not known (in most cases upper level), the determined angular momentum ''J'' and hyperfine constant ''A'' are used to identify one of the involved levels (in most cases the lower level) and the energy of the unknown level is determined by using center of mass wave number of line and the energy of the identified level. The level found in this way must explain most of the observed fluorescence wavelengths and the hyperfine structure of the fluorescence lines appearing in FT spectrum.

  19. Electronic-structure calculations of praseodymium metal by means of modified density-functional theory

    International Nuclear Information System (INIS)

    Svane, A.; Trygg, J.; Johansson, B.; Eriksson, O.

    1997-01-01

    Electronic-structure calculations of elemental praseodymium are presented. Several approximations are used to describe the Pr f electrons. It is found that the low-pressure, trivalent phase is well described using either the self-interaction corrected (SIC) local-spin-density (LSD) approximation or the generalized-gradient approximation (GGA) with spin and orbital polarization (OP). In the SIC-LSD approach the Pr f electrons are treated explicitly as localized with a localization energy given by the self-interaction of the f orbital. In the GGA+OP scheme the f-electron localization is described by the onset of spin and orbital polarization, the energetics of which is described by spin-moment formation energy and a term proportional to the total orbital moment, L z 2 . The high-pressure phase is well described with the f electrons treated as band electrons, in either the LSD or the GGA approximations, of which the latter describes more accurately the experimental equation of state. The calculated pressure of the transition from localized to delocalized behavior is 280 kbar in the SIC-LSD approximation and 156 kbar in the GGA+OP approach, both comparing favorably with the experimentally observed transition pressure of 210 kbar. copyright 1997 The American Physical Society

  20. RM1 Semiempirical Quantum Chemistry: Parameters for Trivalent Lanthanum, Cerium and Praseodymium.

    Directory of Open Access Journals (Sweden)

    José Diogo L Dutra

    Full Text Available The RM1 model for the lanthanides is parameterized for complexes of the trications of lanthanum, cerium, and praseodymium. The semiempirical quantum chemical model core stands for the [Xe]4fn electronic configuration, with n =0,1,2 for La(III, Ce(III, and Pr(III, respectively. In addition, the valence shell is described by three electrons in a set of 5d, 6s, and 6p orbitals. Results indicate that the present model is more accurate than the previous sparkle models, although these are still very good methods provided the ligands only possess oxygen or nitrogen atoms directly coordinated to the lanthanide ion. For all other different types of coordination, the present RM1 model for the lanthanides is much superior and must definitely be used. Overall, the accuracy of the model is of the order of 0.07Å for La(III and Pr(III, and 0.08Å for Ce(III for lanthanide-ligand atom distances which lie mostly around the 2.3Å to 2.6Å interval, implying an error around 3% only.

  1. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Li Qiang, E-mail: guoliqiang@ujs.edu.cn; Ding, Jian Ning; Huang, Yu Kai [Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  2. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Directory of Open Access Journals (Sweden)

    Li Qiang Guo

    2015-08-01

    Full Text Available Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  3. Thermodynamic and transport properties of liquid gallium

    International Nuclear Information System (INIS)

    Park, H.Y.; Jhon, M.S.

    1982-01-01

    The significant structure theory of liquids has been successfully applied to liquid gallium. In this work, we have assumed that two structures exist simultaneously in liquid gallium. One is considerec as loosely close packed β-Ga-like structure and the other is remainder of solid α-Ga or α-Ga-like structure. This two structural model is introduced to construct the liquid partition function. Using the partition function, the thermodynamic and transport properties are calculated ever a wide temperature range. The calculated results are quite satisfactory when compared with the experimental results. (Author)

  4. Gallium uptake in myositis ossificans. Potential pitfalls in diagnosis

    International Nuclear Information System (INIS)

    Salzman, L.; Lee, V.W.; Grant, P.

    1987-01-01

    Seven cases of gallium uptake in myositis ossificans are described. Gallium scans are done frequently in paraplegics, quadriplegics, and comatose patients to look for occult infection. It is important to be aware of possible gallium uptake in myositis ossificans, particularly in the extremities, which is frequent in these patients. Gallium uptake may be present prior to any abnormalities seen on plain films or CT scans. It is important to correlate roentgenograms with abnormal gallium scans, particularly in the extremities, to avoid potential pitfalls in diagnosis and prevent unnecessary antibiotic treatment. A bone scan should be obtained whenever possible, particularly when roentgenograms are negative, to confirm the diagnosis

  5. 67Gallium lung scans in progressive systemic sclerosis

    International Nuclear Information System (INIS)

    Baron, M.; Feiglin, D.; Hyland, R.; Urowitz, M.B.; Shiff, B.

    1983-01-01

    67 Gallium lung scans were performed in 19 patients with progressive systemic sclerosis (scleroderma). Results were expressed quantitatively as the 67 Gallium Uptake Index. The mean total pulmonary 67 Gallium Uptake Index in patients was significantly higher than that in controls (41 versus 25), and 4 patients (21%) fell outside the normal range. There were no clinical or laboratory variables that correlated with the 56 Gallium uptake. Increased pulmonary 67 Gallium uptake in scleroderma may prove useful as an index of pulmonary disease activity

  6. Leaching Kinetics of Praseodymium in Sulfuric Acid of Rare Earth Elements (REE) Slag Concentrated by Pyrometallurgy from Magnetite Ore

    International Nuclear Information System (INIS)

    Kim, Chul-Joo; Yoon, Ho-Sung; Chung, Kyung Woo; Lee, Jin-Young; Kim, Sung-Don; Shin, Shun Myung; Kim, Hyung-Seop; Cho, Jong-Tae; Kim, Ji-Hye; Lee, Eun-Ji; Lee, Se-Il; Yoo, Seung-Joon

    2015-01-01

    A leaching kinetics was conducted for the purpose of recovery of praseodymium in sulfuric acid (H 2 SO 4 ) from REE slag concentrated by the smelting reduction process in an arc furnace as a reactant. The concentration of H 2 SO 4 was fixed at an excess ratio under the condition of slurry density of 1.500 g slag/L, 0.3 mol H 2 SO 4 , and the effect of temperatures was investigated under the condition of 30 to 80 .deg. C. As a result, praseodymium oxide (Pr 6 O 1 1) existing in the slag was completely converted into praseodymium sulfate (Pr 2 (SO 4 ) 3 ·8H 2 O) after the leaching of 5 h. On the basis of the shrinking core model with a shape of sphere, the first leaching reaction was determined by chemical reaction mechanism. Generally, the solubility of pure REEs decreases with the increase of leaching temperatures in sulfuric acid, but REE slag was oppositely increased with increasing temperatures. It occurs because the ash layer included in the slag is affected as a resistance against the leaching. By using the Arrhenius expression, the apparent activation energy of the first chemical reaction was determined to be 9.195 kJmol -1 . In the second stage, the leaching rate is determined by the ash layer diffusion mechanism. The apparent activation energy of the second ash layer diffusion was determined to be 19.106 kJmol -1 . These relative low activation energy values were obtained by the existence of unreacted ash layer in the REE slag

  7. Leaching Kinetics of Praseodymium in Sulfuric Acid of Rare Earth Elements (REE) Slag Concentrated by Pyrometallurgy from Magnetite Ore

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chul-Joo; Yoon, Ho-Sung; Chung, Kyung Woo; Lee, Jin-Young; Kim, Sung-Don; Shin, Shun Myung [Korea Institute of Geoscience and Mineral Resources, Daejeon (Korea, Republic of); Kim, Hyung-Seop; Cho, Jong-Tae; Kim, Ji-Hye; Lee, Eun-Ji; Lee, Se-Il; Yoo, Seung-Joon [Seonam University, Asan (Korea, Republic of)

    2015-02-15

    A leaching kinetics was conducted for the purpose of recovery of praseodymium in sulfuric acid (H{sub 2}SO{sub 4}) from REE slag concentrated by the smelting reduction process in an arc furnace as a reactant. The concentration of H{sub 2}SO{sub 4} was fixed at an excess ratio under the condition of slurry density of 1.500 g slag/L, 0.3 mol H{sub 2}SO{sub 4}, and the effect of temperatures was investigated under the condition of 30 to 80 .deg. C. As a result, praseodymium oxide (Pr{sub 6}O{sub 1}1) existing in the slag was completely converted into praseodymium sulfate (Pr{sub 2}(SO{sub 4}){sub 3}·8H{sub 2}O) after the leaching of 5 h. On the basis of the shrinking core model with a shape of sphere, the first leaching reaction was determined by chemical reaction mechanism. Generally, the solubility of pure REEs decreases with the increase of leaching temperatures in sulfuric acid, but REE slag was oppositely increased with increasing temperatures. It occurs because the ash layer included in the slag is affected as a resistance against the leaching. By using the Arrhenius expression, the apparent activation energy of the first chemical reaction was determined to be 9.195 kJmol{sup -1}. In the second stage, the leaching rate is determined by the ash layer diffusion mechanism. The apparent activation energy of the second ash layer diffusion was determined to be 19.106 kJmol{sup -1}. These relative low activation energy values were obtained by the existence of unreacted ash layer in the REE slag.

  8. EDXRF and TXRF determination of gallium in gallium-uranium matrix

    International Nuclear Information System (INIS)

    Misra, N.L.; Sanjay Kumar, S.; Dhara, Sangita; Aggarwal, S.K.; Venugopal, V.

    2009-01-01

    Energy Dispersive X-Ray Fluorescence (EDXRF) and Total Reflection X-ray Fluorescence (TXRF) methods for determination of Gallium in Gallium-Uranium matrix have been developed. For EDXRF determinations, 200 μL of standards/samples mixed with internal standard copper were dispersed on 30 mm diameter absorbent sheet so that it behaves like a thin film of the sample. The Gallium amounts in samples were determined from their EDXRF spectra using a calibration plot. For TXRF determinations, samples were taken on flat polished quartz sample supports and Gallium was determined in conventional way. For EDXRF and TXRF determinations, the average precision and accuracy obtained for Ga determinations was better than 3% (1σ). (author)

  9. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  10. On the extent of homogeneity region of PrP phase in the system praseodymium-phosphorus

    International Nuclear Information System (INIS)

    Mironov, K.E.

    1984-01-01

    For constructed by ion type compounds in the metal or metalloid systems homogeneity region boundary position can be observed at different compositions depending on which side the approximation to it occurs: on the metal or compound side. As an example the PrP homogeneity region in the praseodymium-phosphorus system is considered. An assumption is made on the prevalence of this phenomenon among rare earth monopnictides and monochalcogenides. For the PrP phase it is indicated that the monophopshide cell parameter depends on content of impurities in the initial metal, oxygen, in particular

  11. Lanthanum(III) and praseodymium(III) complexes with bidentate and tetradentate Schiff base ligands containing indole ring

    International Nuclear Information System (INIS)

    Rai, Anita; Sengupta, Soumitra Kumar; Pandey, Om Prakash

    2000-01-01

    Complexes of lanthanum(III) and praseodymium(III) with Schiff bases, prepared from isatin with aniline, 4-chloroaniline, 2- bromoaniline, 2-nitroaniline (Hl), ethylenediamine, o- phenylenediamine and 4-methyl-o-phenylenediamine (H 2 L') have been synthesised and their physico-chemical properties investigated using elemental analysis, molar conductivities, magnetic susceptibility measurements and spectral (visible, infrared and 1 H NMR) data. The Schiff bases HL bind in a bidentate manner while schiff bases H 2 L' bind in a tetradentate manner. The probable structures of the complexes are proposed. (author)

  12. Spectral intensities and bonding parameters for some praseodymium(III) and neodymium(III) complexes with benzimidazoles

    Energy Technology Data Exchange (ETDEWEB)

    Vyas, P C; Ojha, C K; Mittal, S; Joshi, G K

    1988-09-01

    The electronic spectral intensity parameters (Judd-Ofelt; Tsub(lambda)) calculated from absorption spectral data for the complexes of praseodymium(III) and neodymium(III) nitrates with benzimidazole and 2-methyl-, 2-ethyl- and 2-n-propyl-benzimidazoles are reported. The conductance of these derivatives in dimethylformamide suggests 1:1 electrolytic nature. The infrared spectral data indicate the presence of Csub(2v) as well Dsub(2h)-nitrate ions in the complexes. The correlation of the intensity of hypersensitive transitions with bonding (nephelauxetic ratio and degree of covalency) parameters are also reported. (author). 13 refs., 2 tables.

  13. Application of extraction of gallium molybdotungstate HPA for their investigation in solutions and gallium determination

    International Nuclear Information System (INIS)

    Kol'tsova, E.G.; Vakulich, A.N.; Tsyganok, L.P.

    2001-01-01

    Extraction of gallium molybdotungstate heteropolyacids and their associates with a row of triphenylmethane dyes, use of extraction for study of complexing in Mo 6 -W 6 -Ga 3+ -H 3 O + system are investigated. Research of optimal analytical states and development of extraction spectrophotometric methods of gallium determination are done. It is shown that increase of Mo 6 part in heteropolyanion improves solvation interaction of heteropolyacids with organic solvents elevating extraction properties of polyanion [ru

  14. The role of gallium-67 in Hodgkin's disease

    International Nuclear Information System (INIS)

    Bogart, Jeffrey A.; Chung, T. Chung; Mariados, Neil F.

    1996-01-01

    Purpose/Objective: Although widely used, the value of gallium imaging in managing Hodgkin's lymphoma remains unclear. Methods: Retrospective review of gallium and treatment data in patients with Hodgkin's disease between January 1990 and July 1995. Results: Eighty-six of 101 patients had Ga-67 imaging. Stage was as follows: 1A-11 patients, 1B - 2, 2A - 27, 2B - 22, 3A - 10, 3B - 5, 4A - 3 and 4B - 6. Sixty-two patients had staging gallium scans and 15% of tumors were not gallium avid. Two patients were upstaged based on gallium scan. Five patients had positive laparotomy and all had negative abdominal gallium exams. Three studies had false positive lesions. Initial therapy was assessed with gallium in 61 patients and 45 had complete response. Tumor recurred in 36% ((10(28))) of patients gallium negative after 3-6 cycles of chemotherapy, with no recurrences in 17 patients gallium negative after radiotherapy or chemo radiation. Six of 7 patients with focal gallium uptake after chemotherapy received radiotherapy and all remain disease free. Seven patients had persistent or progressive gallium-avid tumor after chemotherapy correlating with clinical disease. Two patients had false positive exams after radiotherapy. Twenty-two patients had gallium scans at recurrence. One scan was (false) negative and in two cases, gallium imaging was the initial evidence of recurrent tumor. Conclusion: Ga-67 imaging may help confirm the presence of active Hodgkin's disease, but was unreliable in defining disease remission after chemotherapy in this study population. Prospective studies may help define the role of gallium scans

  15. Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

    Science.gov (United States)

    Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

    2016-06-01

    We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

  16. Determination of the stability constants of lanthanum, praseodymium, europium, erbium and lutetium complexes with chloride ions

    International Nuclear Information System (INIS)

    Fernandez R, E.

    2008-01-01

    The stability constants of La 3+ , Pr 3+ , Eu 3+ , Er 3+ and Lu 3+ chloride complexes were determined in perchloric acid media using a liquid-liquid extraction method. The dinonyl napthalene sulfonic acid in n-heptane was used as extractant. The lanthanide (Ln) concentrations were measured by a radiochemical (Eu and Lu) and a spectrophotometric (La, Pr, and Er) methods. In the last method, xylenol orange was used for the determinations at ph 6. The stability constants of lanthanum, praseodymium, erbium and lutetium chloride complexes were determined in 2, 3 and 4 M ionic strength and europium in 1, 2 and 3 M, at 303 K. The fitting of experimental data to the equations for the calculation of the stability constants, was carry out considering both one chemical species (LnCl 2+ ) or two chemical species (LnCl 2+ and LnCl 2 + ). The Specific Ion Interaction Theory was applied to the values of log β I Ln , Cl and the first stability constants at zero ionic strength were calculated by extrapolation. The same theory could not be applied to the log β I Ln , 2Cl , due to its low abundance and the values determined for the stability constants were similar. The distribution diagrams of the chemical species were obtained using the program MEDUSA and considering log β I Ln , CI , log β I Ln , 2CI values obtained in this work and the hydrolysis constants taken from the literature. The lanthanide chloride complexes are present in solution at specific conditions of ionic strength, concentration and in the absence of hydrolysis. The log β I Ln , Cl data were related to the charge density and the corresponding equations were obtained. These equations could be used to determine the stability constants along the lanthanide series. (Author)

  17. Optical characteristics of a gallium laser plasma

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Shimon, L.L.; Dashchenko, A.I.; Shevera, I.V.; Chuchman, M.P.

    2001-01-01

    Results are presented from studies of the emission from an erosion gallium laser plasma at a moderate intensity (W = (1-5) x 10 8 W/cm 2 ) of a 1.06-μm laser radiation. It is shown that, under these conditions, the lower excited states of gallium atoms are populated most efficiently. Among the ions, only the most intense GaII lines are observed in the emission spectrum. The populations of GaI and GaII excited states are not related to direct electron excitation, but are determined by the recombination of gallium ions with slow electrons. The recombination times of GaIII and GaII ions in the core of the plasma jet are determined from the waveforms of emission in the GaII and GaI spectral lines and are equal to 10 and 140 ns, respectively. The results obtained are of interest for spectroscopic diagnostics of an erosion plasma produced from gallium-containing layered crystals during the laser deposition of thin films

  18. Gallium-positive Lyme disease myocarditis

    International Nuclear Information System (INIS)

    Alpert, L.I.; Welch, P.; Fisher, N.

    1985-01-01

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved

  19. Study in aqueous solution of the praseodymium inclusion in β-cyclodextrin in 2 M of NaCl; Estudio en solucion acuosa de la inclusion del praseodimio en la β-ciclodextrina en 2 M de NaCl

    Energy Technology Data Exchange (ETDEWEB)

    De la Cruz M, N.

    2013-07-01

    In the fission of uranium to produce electricity, generated between the fission products which are the lanthanides and actinides that at any given time may come into contact with aqueous media, because of this, praseodymium was including in the β-cyclodextrin in order to increase the solubility and stability of praseodymium by forming inclusion complexes Praseodymium-β-cyclodextrin (Pr-β-Cd). The inclusion study was conducted in a proportion of praseodymium and β-cyclodextrin. Infrared spectra, Raman and X-ray diffraction showed the presence of praseodymium and β-cyclodextrin in the inclusion complex, in both proportions. The analysis by scanning electron microscopy confirmed the inclusion of praseodymium in βcyclodextrin. In general, the results of characterization obtained by these techniques show the formation of the inclusion complex. Furthermore, the behaviour of praseodymium inclusion in the β-cyclodextrin was studied in 2 M NaCl at 303 K and free-CO{sub 2} conditions. For this reason, we used two methods: spectrophotometric and potentiometric titration direct of praseodymium-β-cyclodextrin, the data were treated graphically and with the program SUPERQUAD, respectively. The values obtained for praseodymium by spectrophotometric method was: log β{sub 1}= -8.75 calculated graphically and with the potentiometric method, using program SUPERQUAD were logβ{sub 1,OH}= -8.73 ± 0.01 logβ{sub 1,2OH}= -18.27 ± 0.16 and logβ{sub 1,3OH}= -26.44 ± 0.02 obtained simultaneously. (Author)

  20. Dose dependent disposition of gallium-67 in rats

    International Nuclear Information System (INIS)

    Gautam, S.R.

    1982-01-01

    Radioactive gallium-67 has been employed as a diagnostic and follow-up agent for cancer therapy. Currently gallium nitrate is undergoing Phase I clinical studies. A million fold increase in the concentration of the carrier gallium citrate over the range of carrier-free gallium-67 (pgm) to 1.0 μg caused no significant alteration in the disposition of gallium-67 in rats.Gallium-67 was eliminated from blood with a biological t1/2 of 4.1 days. A linear tissue binding profile was observed for gallium-67 over this concentration range. A multi-compartment pharmacokinetic model was developed in which all the tissues studied were treated as separate compartments. At 1.0 mg dose level, significant alteration in the disposition of gallium-67 was observed in rats, > 95% of the initial radioactivity was characteristic reappearance of the radioactivity in the blood approximately 4 hours after dosing leading to a ''hump'' in the blood concentration-time profiles. Following the 1.0 mg dose low tissue levels were observed, except for the kidneys, which contained about 8% of the administered dose per gram of the tissue one-half hour after dosing. A non-linear tissue binding profile was observed to be associated with gallium at high doses. It was hypothesized that the rapid loss of gallium-67 from the vascular system following the high doses of gallium citrate was due to the accumulation of the drug in the kidneys where it was eventually eliminated via urine. The kidneys thus would act as a temporary storage site for gallium. It was concluded that the dose-related renal toxicity associated with gallium therapy may be attributed to the kidney's role as a temporary storage site following high doses

  1. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

    Science.gov (United States)

    Lai, Kun-Yu

    Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

  2. Performance analysis and simulation of vertical gallium nitride nanowire transistors

    Science.gov (United States)

    Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

    2018-06-01

    Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

  3. Redox behavior of a low-doped Pr-CeO_2(111) surface. A DFT+U study

    International Nuclear Information System (INIS)

    Milberg, Brian; Juan, Alfredo; Irigoyen, Beatriz

    2017-01-01

    Highlights: • Pr doping facilitates oxygen donation due to the easy formation of Pr"3"+/Pr"4"+ and Ce"3"+/Ce"4"+ redox couples. • Pr doping also favors the formation of superoxide (O_2"−) radicals on surface O-holes. • CO can be oxidized by superoxide radical forming a CO_2 molecule floating on the surface. • CO can also interact on the (O_2"−)/Pr"3"+ interphase and forms weakly adsorbed carbonate-type intermediates. - Abstract: In this work, we investigated the redox behavior (donation and replenishing of oxygen) of a low praseodymium (Pr)-doped CeO_2(111) surface. We considered a 3.7 at.% Pr doping and performed density functional calculations using the GGA formalism with the ‘U’ correction on Ce(4f) and Pr(4f) orbitals. Our results indicate that Pr doping promotes oxygen donation by lowering the energy necessary to form surface anionic vacancies. When the Ce_0_._9_6_3Pr_0_._0_3_7O_2(111) surface donates one oxygen, the two excess electrons locate on Pr and Ce cations and reduce them to Pr"3"+ and Ce"3"+ ones. Praseodymium doping also favors the activation of O_2 molecule on surface O-holes, leading to formation of a superoxide (O_2"−) radical as well as to reoxidation of the Ce"3"+ cation to Ce"4"+ one. Additionally, we used the CO molecular adsorption for testing the reactivity of those superoxide species. The calculations expose the ability of these radicals to oxidize CO forming a CO_2 molecule floating on the surface. However, when the superoxide is in the immediate vicinity of Pr dopant a carbonate-type species is formed. Our theoretical results may help to gain insight into redox properties and improved catalytic performance of low-doped Pr-CeO_2 solids.

  4. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  5. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Science.gov (United States)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  6. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    International Nuclear Information System (INIS)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-01-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

  7. Determination of gallium in flint clay by neutron activation analysis

    International Nuclear Information System (INIS)

    Padova, A.; Even, O.

    1975-01-01

    Neutron activation analysis was applied to determine gallium traces in different flint clay samples found in Israel. The principal 835 KeV gamma ray of gallium-72 was measured with a 60 cm 2 Ge(Li) spectrometer in conjunction with a Packard 4000 channel analyzer and Wang table computer, model 720 C. Samples were weighed into polyethylene vials, sealed and inserted into polyethylene rabbit. Gallium metal and gallium oxide used as standards were similarly prepared for irradiation for 10 minutes in the I.R.R.I., at a thermal flux of 3.5x10 12 n/cm 2 sec. Careful calibration of the spectrometer and judicious choice of cooling time eliminate the influence of such elements as europium-152, and sodium-24 and make possible the determination of gallium without prior chemical separation. Representative Israel flint clay samples contain about 55 ppm gallium. (B.G.)

  8. Interactions of Zircaloy cladding with gallium: 1998 midyear status

    International Nuclear Information System (INIS)

    Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

    1998-06-01

    A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga 2 O 3 (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at ≥300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed

  9. Psoas abscess localization by gallium scan in aplastic anemia

    International Nuclear Information System (INIS)

    Oster, M.W.; Gelrud, L.G.; Lotz, M.J.; Herzig, G.P.; Johnston, G.S.

    1975-01-01

    Gallium 67 scanning is an effective method of detecting inflammatory lesions, especially abscesses. A 10-year-old boy with aplastic anemia and severe leukopenia and granulocytopenia had a psoas abscess diagnosed by gallium scan. The patient died with Candida sepsis 18 days after bone marrow transplantation. At autopsy, a chronic psoas abscess with Candida was found. The gallium scan offers a clinically effective and noninvasive means of evaluating suspected infection in the granulocytopenia patient. (U.S.)

  10. Survey of the market, supply and availability of gallium

    Energy Technology Data Exchange (ETDEWEB)

    Rosi, F.D.

    1980-07-01

    The objective of this study was to assess the present consumption and supply of gallium, its potential availability in the satellite power system (SPS) implementation time frame, and commercial and new processing methods for increasing the production of gallium. Findings are reported in detail. The findings strongly suggest that with proper long range planning adequate gallium would be available from free-enterprise world supplies of bauxite for SPS implementation.

  11. Interactions of zircaloy cladding with gallium -- 1997 status

    International Nuclear Information System (INIS)

    Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

    1997-11-01

    A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga 2 O 3 (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at ≥ 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed

  12. Inflammatory pseudotumor: A gallium-avid mobile mesenteric mass

    International Nuclear Information System (INIS)

    Auringer, S.T.; Scott, M.D.; Sumner, T.E.

    1991-01-01

    An 8-yr-old boy with a 1-mo history of culture-negative fever and anemia underwent gallium, ultrasound, and computed tomography studies as part of the evaluation of a fever of unknown origin. These studies revealed a mobile gallium-avid solid abdominal mass subsequently proven to be an inflammatory pseudotumor of the mesentery, a rare benign mass. This report documents the gallium-avid nature of this rare lesion and discusses associated characteristic clinical, pathologic, and radiographic features

  13. Design and Implementation of a High-Flux Photoneutron Converter for Analysis of Fast Neutron Radiation Damage on Gallium Nitride Transistors

    Science.gov (United States)

    2017-06-01

    as the polarization and 2DEG control between aluminum gallium nitride (AlGaN) and GaN layers. Third, the physical and electrical properties of...electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” Journal of Applied Physics , vol...relationship of the electrical and physical characteristics of the devices with respect to the fast neutron fluence. The damage was also analyzed using

  14. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Gallium-cladding compatibility testing plan. Phases 1 and 2: Test plan for gallium corrosion tests. Revision 2

    International Nuclear Information System (INIS)

    Wilson, D.F.; Morris, R.N.

    1998-05-01

    This test plan is a Level-2 document as defined in the Fissile Materials Disposition Program Light-Water-Reactor Mixed-Oxide Fuel Irradiation Test Project Plan. The plan summarizes and updates the projected Phases 1 and 2 Gallium-Cladding compatibility corrosion testing and the following post-test examination. This work will characterize the reactions and changes, if any, in mechanical properties that occur between Zircaloy clad and gallium or gallium oxide in the temperature range 30--700 C

  16. State and prospects of Russian and world gallium market

    Directory of Open Access Journals (Sweden)

    F. D. Larichkin

    2017-12-01

    Full Text Available The authors consider the state of Russian and world mineral and raw materials base of gallium, the main spheres of application in various branches and industries of the national economy. The article presents the generalization and analysis of trends in world and Russian production, consumption of rare metal and its compounds, the world trade and global market of gallium and products based on it, consuming it in new science-intensive innovative industries, including the production of military equipment. The unique chemical properties of gallium remained unclaimed for a long time. Only after the discovery of the semiconductor properties of gallium compounds has the situation radically changed: the rate of growth in production and consumption of metallic gallium at the end of the twentieth and beginning of the 21st century amounted to an average of more than 8% per year. The largest area of consumption of gallium is the production of semiconductor materials – gallium arsenide (GaAs and gallium nitride (GaN. The areas of application of gallium not related to the semiconductor industry are very small. Industry structure of consumption of GaAs and GaN: in integrated circuits is 66%; optoelectronic devices (light-emitting diodes, laser diodes, photodetectors and solar batteries – 20%; the remaining 14% – scientific research, special alloys, etc. Optoelectronic devices are used in aerospace industry, consumer goods, industrial and medical equipment and telecommunications. Integral circuits are used in the military industry, high-power computers and electronic communications. The most significant growing sectors of the market are LEDs, electronics based on gallium nitride and solar cells. Solar energy has become the fastest growing branch of the world economy. The volumes of gallium production in Russia do not correspond to its raw material, scientific and technological potential as the country and require the development activation based on state

  17. Praseodymium valency from crystal structure in Pr-Ba-Cu-O and (Y-Pr)-Ba-Cu-O single crystals

    International Nuclear Information System (INIS)

    Collin, G.; Albouy, P.A.; Monod, P.; Ribault, M.

    1990-01-01

    The substitution of Pr to Y leads to materials with a general formula (Y 1-v Pr v ) (Ba 2-x Pr x ) (Cu 3-y vac y ) O 6+x/2-y+z and with a structural transition around v + x' ∼ 0.5. For v + x 0.5 the crystals are tetragonal, La 1.5 Ba 1.5 Cu 3 O 7±z type, with the characteristic tri-twinning of this phase. The Pr valency, in the range 3-3.2 + depending on preparation conditions, is determined from interatomic distances. Orthorhombic crystals of Pr Ba Cu O prepared at high temperatures exhibit a high amount of defects, y ∼ 0.25 on the Cu(1) site and are semiconductors with a T -1/4 activation law attributed to the praseodymium valence fluctuation

  18. Synthesis and characterization of rare-earth-doped calcium tungstate nanocrystals

    Science.gov (United States)

    Suneeta, P.; Rajesh, Ch.; Ramana, M. V.

    2018-02-01

    In this paper, we report synthesis and characterization of rare-earth-ion-doped calcium tungstate (CaWO4) nanocrystals (NCs). Rare-earth ions, such as gadolinium (Gd), neodymium (Nd), praseodymium (Pr), samarium (Sm) and holmium (Ho), were successfully doped in the CaWO4 NCs by changing the synthesis conditions. The adopted synthesis route was found to be fast and eco-friendly. Structural characterizations, such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and compositional analysis, were performed using energy dispersive analysis of X-rays (EDAX) on as-synthesized NCs. The results indicate the size of the NCs ranging between 47 to 68nm and incorporation of rare-earth ions in CaWO4 NCs.

  19. Automated realization of the gallium melting and triple points

    Science.gov (United States)

    Yan, X.; Duan, Y.; Zhang, J. T.; Wang, W.

    2013-09-01

    In order to improve the automation and convenience of the process involved in realizing the gallium fixed points, an automated apparatus, based on thermoelectric and heat pipe technologies, was designed and developed. This paper describes the apparatus design and procedures for freezing gallium mantles and realizing gallium melting and triple points. Also, investigations on the melting behavior of a gallium melting point cell and of gallium triple point cells were carried out while controlling the temperature outside the gallium point cells at 30 °C, 30.5 °C, 31 °C, and 31.5 °C. The obtained melting plateau curves show dentate temperature oscillations on the melting plateaus for the gallium point cells when thermal couplings occurred between the outer and inner liquid-solid interfaces. The maximum amplitude of the temperature fluctuations was about 1.5 mK. Therefore, the temperature oscillations can be used to indicate the ending of the equilibrium phase transitions. The duration and amplitude of such temperature oscillations depend on the temperature difference between the setting temperature and the gallium point temperature; the smaller the temperature difference, the longer the duration of both the melting plateaus and the temperature fluctuations.

  20. Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

    Science.gov (United States)

    2007-06-01

    models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

  1. State of rare earth impurities in gallium and indium antimonides

    International Nuclear Information System (INIS)

    Evgen'ev, S.B.; Kuz'micheva, G.M.

    1990-01-01

    State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

  2. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    Directory of Open Access Journals (Sweden)

    Tae-Hee Kim

    2016-02-01

    Full Text Available Gallium nitride (GaN nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO33∙xH2O was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6 powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3. Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  3. Nuclear microprobe imaging of gallium nitrate in cancer cells

    Science.gov (United States)

    Ortega, Richard; Suda, Asami; Devès, Guillaume

    2003-09-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

  4. Nuclear microprobe imaging of gallium nitrate in cancer cells

    International Nuclear Information System (INIS)

    Ortega, Richard; Suda, Asami; Deves, Guillaume

    2003-01-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material

  5. Fluorimetric analysis of gallium in bauxite, by-products, products from gallium processing and its control solutions

    International Nuclear Information System (INIS)

    Ferreira, C.A.M.; Medeiros, V.

    1987-01-01

    The gallium processing since raw material analysis until end-products analysis is studied. Gallium presence in by-products and products, as well as the fluorimetric method is analyzed. Equipments and materials used in laboratory, reagents and chemical solutions are described. (M.J.C.) [pt

  6. Effect of Partial Substitution of Neodymium with Praseodymium on the Magnetic and Process Properties of Sintered Magnets of Type NdFeB

    Science.gov (United States)

    Dormidontov, N. A.; Dormidontov, A. G.; Lileev, A. S.; Kamynin, A. V.; Lukin, A. A.

    2017-01-01

    The effect of substitution of neodymium with praseodymium in sintered magnets of type NdFeB on their magnetic and process properties in the concentration range of [Pr] = 0 - 13 wt.% is studied. The special features of milling of the alloys, sintering processes and heat treatments in the production of magnets containing praseodymium are discussed. Hysteresis characteristics of B r ≥ 1.2 T, H cJ ≥ 1200 kA/m, H cb ≥ 880 kA/m, H k ≥ 960 kA/m, and BH max ≥ 280 kJ/m3 are obtained for magnets with composition (in wt.%) 33 Nd, 10 Pr, 1.5 (Ti + Al + Cu), 1.3 B, the remainder Fe.

  7. Hyperfine coupling in gadolinium-praseodymium alloys by specific heat measurements; Etude du couplage hyperfin dans les alliages gadolinium-praseodyme par mesures de chaleur specifique

    Energy Technology Data Exchange (ETDEWEB)

    Michel, J [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1967-12-01

    We have studied the hyperfine coupling in gadolinium-praseodymium alloys by specific heat measurements down to 0.3 K. In the first part we describe the apparatus used to perform our measurements. The second part is devoted to some theoretical considerations. We have studied in detail the case of praseodymium which is an exception in the rare earth series. The third part shows the results we have obtained. (author) [French] Nous avons etudie le couplage hyperfin d'alliages de gadolinium-praseodyme par des mesures de chaleur specifique jusqu'a 0.3 K. Dans la premiere partie de cette etude nous decrivons le dispositif experimental. La deuxieme partie est consacree a des considerations theoriques. Nous avons etudie en detail le cas du praseodyme qui est une exception dans la serie des terres rares. La troisieme partie est consacree aux resultats experimentaux. (auteur)

  8. Patterned gallium surfaces as molecular mirrors.

    Science.gov (United States)

    Bossi, Alessandra; Rivetti, Claudio; Mangiarotti, Laura; Whitcombe, Michael J; Turner, Anthony P F; Piletsky, Sergey A

    2007-09-30

    An entirely new means of printing molecular information on a planar film, involving casting nanoscale impressions of the template protein molecules in molten gallium, is presented here for the first time. The metallic imprints not only replicate the shape and size of the proteins used as template. They also show specific binding for the template species. Such a simple approach to the creation of antibody-like properties in metallic mirrors can lead to applications in separations, microfluidic devices, and the development of new optical and electronic sensors, and will be of interest to chemists, materials scientists, analytical specialists, and electronic engineers.

  9. Sodium Flux Growth of Bulk Gallium Nitride

    Science.gov (United States)

    Von Dollen, Paul Martin

    This dissertation focused on development of a novel apparatus and techniques for crystal growth of bulk gallium nitride (GaN) using the sodium flux method. Though several methods exist to produce bulk GaN, none have been commercialized on an industrial scale. The sodium flux method offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. But the current equipment and methods for sodium flux growth of bulk GaN are generally not amenable to large-scale crystal growth or in situ investigation of growth processes, which has hampered progress. A key task was to prevent sodium loss or migration from the sodium-gallium growth melt while permitting N2 gas to access the growing crystal, which was accomplished by implementing a reflux condensing stem along with a reusable sealed capsule. The reflux condensing stem also enabled direct monitoring and control of the melt temperature, which has not been previously reported for the sodium flux method. Molybdenum-based materials were identified from a corrosion study as candidates for direct containment of the corrosive sodium-gallium melt. Successful introduction of these materials allowed implementation of a crucible-free containment system, which improved process control and can potentially reduce crystal impurity levels. Using the new growth system, the (0001) Ga face (+c plane) growth rate was >50 mum/hr, which is the highest bulk GaN growth rate reported for the sodium flux method. Omega X-ray rocking curve (?-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were 1020 atoms/cm3, possibly due to reactor cleaning and handling procedures. This dissertation also introduced an in situ technique to correlate changes in N2 pressure with dissolution of nitrogen and precipitation of GaN from the sodium-gallium melt. Different stages of N2 pressure decay were identified and linked to

  10. Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

    Science.gov (United States)

    Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2015-01-14

    Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

  11. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  12. Continuum modelling of silicon diffusion in indium gallium arsenide

    Science.gov (United States)

    Aldridge, Henry Lee, Jr.

    A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

  13. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    Energy Technology Data Exchange (ETDEWEB)

    Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

  14. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    Science.gov (United States)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  15. Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lamhamdi, M. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Ecole national des sciences appliquées khouribga, Université Hassan 1er, 26000 Settat (Morocco); Cayrel, F. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Frayssinet, E. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Bazin, A.E.; Yvon, A.; Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours (France); Cordier, Y. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Alquier, D. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France)

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p–n and unipolar junctions. For both p–n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p–n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  16. Compatibility of ITER candidate structural materials with static gallium

    International Nuclear Information System (INIS)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 degrees C, corrosion rates are ∼4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400 degrees C are ≥88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400 degrees C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized

  17. The effective recovery of praseodymium from mixed rare earths via a hollow fiber supported liquid membrane and its mass transfer related

    International Nuclear Information System (INIS)

    Wannachod, Pharannalak; Chaturabul, Srestha; Pancharoen, Ura; Lothongkum, Anchaleeporn W.; Patthaveekongka, Weerawat

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → Maximum percentage of praseodymium extraction at 91.7% from 10% (v/v) bis (2,4,4-trimethylpentyl) phosphinic acid as extractant carrier in multi cycle operation through single HFLSM module. → Mass transfer mechanism of this system was investigated. → The rate-controlling step of this system was the diffusion of praseodymium ions through the film layer between the feed solution and the liquid membrane. → Model prediction of the dimensionless concentrations and separation factors showed promising agreement with the experimental data. - Abstract: The recovery of praseodymium from mixed rare earths via a hollow fiber supported liquid membrane (HFSLM) was examined. Bis(2,4,4-trimethylpentyl) phosphinic acid - known as Cyanex 272 - was used as an extractant carrier. The stripping solution was hydrochloric acid solution. The experiments examined in functions of the concentrations of the carrier in liquid membrane, the (initial) pH's of initial feed solution within the acidic-pH range, the concentrations of hydrochloric acid, the flow rates of feed and stripping solution, and the operation mode of runs through the hollow fiber module. In addition, the influence of circulation of the stripping solution at various numbers of runs through the HFSLM on the outlet concentration of praseodymium ions in the stripping solution was observed. Mass transfer mechanism in the system was investigated. Extraction equilibrium constant (K ex ), distribution ratio (D), permeability (P) and mass transfer coefficients were determined. The aqueous-phase mass-transfer coefficient (k i ) and organic-phase mass-transfer coefficient (k m ) were reported to 0.0103 and 0.788 cm s -1 , respectively, in which k m is much higher than the k i . Thus it suggests the rate-controlling step is the diffusion of praseodymium ions through the film layer between the feed solution and the liquid membrane. Model prediction of the dimensionless

  18. Ultrabroadband terahertz conductivity of highly doped ZnO and ITO

    DEFF Research Database (Denmark)

    Wang, Tianwu; Zalkovskij, Maksim; Iwaszczuk, Krzysztof

    2015-01-01

    The broadband complex conductivities of transparent conducting oxides (TCO), namely aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO), were investigated by terahertz time domain spectroscopy (THz-TDS) in the frequency range from 0.5 to 18 THz using air...... to be more thickness dependent than GZO and ITO, indicating high importance of the surface states for electron dynamics in AZO. Finally, we measure the transmittance of the TCO films from 10 to 200 THz with Fourier transform infrared spectroscopy (FTIR) measurements, thus closing the gap between THz...

  19. Collinear laser spectroscopy on radioactive praseodymium ions and cadmium ions; Kollineare Laserspektroskopie an radioaktiven Praseodymionen und Cadmiumatomen

    Energy Technology Data Exchange (ETDEWEB)

    Froemmgen, Nadja

    2013-11-21

    Collinear laser spectroscopy is a tool for the model independent determination of spins, charge radii and electromagnetic moments of nuclei in ground and long-lived isomeric states. In the context of this thesis a new offline ion source for high evaporating temperatures and an ion beam analysis system were implemented at the TRIGA-LASER Experiment at the Institute for Nuclear Chemistry at the University of Mainz. The main part of the thesis deals with the determination of the properties of radioactive praseodymium and cadmium isotopes by collinear laser spectroscopy at ISOLDE/CERN. The necessary test measurements for the spectroscopy of praseodymium ions have been conducted with the aforementioned offline ion source at the TRIGA-LASER experiment. The spectroscopy of the praseodymium ions was motivated by the observation of a modulation of the electron capture decay rates of hydrogen-like {sup 140}Pr{sup 58+}. The nuclear magnetic moment of the nucleus is, among others, required for the explanation of the so-called GSI Oscillations and has not been studied experimentally before. Additionally, the determined electron capture decay constant of hydrogen-like {sup 140}Pr{sup 58+} is lower than the one of helium-like {sup 140}Pr{sup 57+}. The explanation of this phenomenon requires a positive magnetic moment. During the experiment at the COLLAPS apparatus the magnetic moments of the neutron-deficient isotopes {sup 135}Pr, {sup 136}Pr and {sup 137}Pr could be determined for the first time. Unfortunately, due to a too low production yield the desired isotope {sup 140}Pr could not be studied.The systematic study of cadmium isotopes was motivated by nuclear physics in the tin region. With Z=48 two protons are missing for the shell closure and the isotopes extend from the magic neutron number N=50 to the magic neutron number N=82. The extracted nuclear properties allow tests of different nuclear models in this region. In this thesis the obtained results of the spectroscopy of

  20. Proportional counter response calculations for gallium solar neutrino detectors

    International Nuclear Information System (INIS)

    Kouzes, R.T.; Reynolds, D.

    1989-01-01

    Gallium bases solar neutrino detectors are sensitive to the primary pp reaction in the sun. Two experiments using gallium, SAGE in the Soviet Union and GALLEX in Europe, are under construction and will produce data by 1989. The radioactive /sup 71/Ge produced by neutrinos interacting with the gallium detector material, is chemically extracted and counted in miniature proportional counters. A number of calculations have been carried out to simulate the response of these counters to the decay of /sup 71/Ge and to background events

  1. Structural properties of lithium borate glasses doped with rare earth ions

    Directory of Open Access Journals (Sweden)

    Thomazini D.

    2001-01-01

    Full Text Available This paper presents the study on lithium triborate glass (LBO in the system (1-x|3B2O3.Li2O| (xNb2O5 yPr3+ zYb3+ wNd3+ with 0 <= x <= 20 mol% (y, z and w in mol%. The samples were studied by Raman spectroscopy, infrared absorption and differential thermal analysis. Pr3+-doped LBO and Pr3+/Yb3+-doped LBO samples show an increase of the glass transition and crystallization temperatures and a decrease of the fusion temperature associated with the increase of the praseodymium concentration in the LBO matrix. For the Nd3+-doped LBO and Pr3+/Yb3+-doped (LBO+Nb2O5 samples, a decrease of the glass transition temperature of the samples was observed. The increase of the rare earth doping leads to an increase of the difference between the glass transition and the crystallization temperatures. From infrared analysis it was possible to identify all the modes associated to the B-O structure. The NbO6 octahedra was also identified by IR spectroscopy for samples with x=5, 10, 15 and 20 mol% and y=0.05, z=1.1 mol%. Raman spectroscopy shows the presence of boroxol rings, tetrahedral and triangular coordination for boron. For samples containing niobium, the Raman spectra show the vibrational mode associated with the Nb-O bond in the niobium octahedra (NbO6.

  2. Effect of chromium concentration on the structural, magnetic and electrical properties of praseodymium-calcium manganite

    Energy Technology Data Exchange (ETDEWEB)

    Bettaibi, A. [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Faculté des Sciences de Gabès cité Erriadh, Université de Gabès, 6079 Gabès (Tunisia); M' nassri, R., E-mail: rafik_mnassri@yahoo.fr [Higher Institute of Applied Sciences and Technology of Kasserine, Kairouan University, B.P. 471, 1200 Kasserine (Tunisia); Laboratoire de Physico-Chimie des Matériaux, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, 5019 Monastir (Tunisia); Selmi, A. [Laboratory of Physics of Materials, Faculty of Sciences of Sfax, Sfax University, B.P.1171, 3000 Sfax (Tunisia); Rahmouni, H. [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Faculté des Sciences de Gabès cité Erriadh, Université de Gabès, 6079 Gabès (Tunisia); Chniba-Boudjada, N. [Institut NEEL, B.P.166, 38042 Grenoble Cedex 09 (France); Faculté des Sciences de Gabès cité Erriadh, Université de Gabès, 6079 Gabès (Tunisia); and others

    2015-11-25

    The influence of Cr doping on magnetic, magnetocaloric and electrical properties in a polycrystalline sample of Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} is investigated. Structural studies show that our samples are single phase. The magnetization shows that the Pr{sub 0.7}Ca{sub 0.3}Mn{sub 1−x}Cr{sub x}O{sub 3} ceramics exhibit a paramagnetic–ferromagnetic transition with a large magnetic entropy change. The relative cooling power (RCP) values are comparable to those of other manganite. DC conductance G{sub DC} measurements show that all samples are characterized by a semiconductor behavior. It is found that G{sub DC} decreases by two decades when increasing chromium concentrations. For the parent compound, dc-conductance is characterized by the appearance of a saturation region at a specific temperature (T{sub sat} = 200 K). For the doped compound, T{sub sat} go beyond room temperature. Conduction mechanism is found to be dominated by the small polaron hopping (SPH) process at high temperature and by variable range hopping one (VRH) at low temperature. AC conductance study confirms that the conductivity is governed by hopping process and obeys to the Jonscher universal power law. The exponent ‘n’ variation with temperature is in good agreement with Mott theory. Its variation as a function of chromium content indicates that the material turns from metallic to semi-insulating behavior when chromium composition increases. Impedance analysis proves the presence of electrical relaxation phenomenon in the material and confirms that grain boundaries played a main role in the conduction process. - Highlights: • Pr{sub 0.7}Ca{sub 0.3}Mn{sub 1−x}Cr{sub x}O{sub 3} manganites phases crystallize in an orthorhombic (Pnma) structure. • Pr{sub 0.7}Ca{sub 0.3}Mn{sub 0.95}Cr{sub 0.05}O{sub 3} has the highest relative cooling power. • DC conductivity measurement indicates that samples have a semiconductor character. • Conduction mechanism is well described by hopping

  3. Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

    National Research Council Canada - National Science Library

    Meyer, Joshua W

    2006-01-01

    .... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

  4. Fabrication and properties of gallium metallic photonic crystals

    International Nuclear Information System (INIS)

    Kozhevnikov, V.F.; Diwekar, M.; Kamaev, V.P.; Shi, J.; Vardeny, Z.V.

    2003-01-01

    Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtained show that Ga-opal crystals are metallic network with slightly smaller temperature coefficient of resistivity than that for bulk gallium. Optical reflectivity of bulk gallium, plain opal and several Ga-opal crystals were measured at photon energies from 0.3 to 6 eV. A pronounced photonic stop band in the visible spectral range was found in both the plain and Ga infiltrated opals. The reflectivity spectra also show increase in reflectivity below 0.6 eV; which we interpret as a significantly lower effective plasma frequency of the metallic mesh in the infiltrated opal compare to the plasma frequency in the pure metal

  5. Single and double ionization of gallium by electron impact

    Indian Academy of Sciences (India)

    Electron impact single and double ionization cross sections of gallium have been calcu- ... The experimental data on single ionization have been compared with the empirical and ..... and multiplication sign curve (¢¢¢) represent present.

  6. Multiple scaling power in liquid gallium under pressure conditions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Renfeng; Wang, Luhong; Li, Liangliang; Yu, Tony; Zhao, Haiyan; Chapman, Karena W.; Rivers, Mark L.; Chupas, Peter J.; Mao, Ho-kwang; Liu, Haozhe

    2017-06-01

    Generally, a single scaling exponent, Df, can characterize the fractal structures of metallic glasses according to the scaling power law. However, when the scaling power law is applied to liquid gallium upon compression, the results show multiple scaling exponents and the values are beyond 3 within the first four coordination spheres in real space, indicating that the power law fails to describe the fractal feature in liquid gallium. The increase in the first coordination number with pressure leads to the fact that first coordination spheres at different pressures are not similar to each other in a geometrical sense. This multiple scaling power behavior is confined within a correlation length of ξ ≈ 14–15 Å at applied pressure according to decay of G(r) in liquid gallium. Beyond this length the liquid gallium system could roughly be viewed as homogeneous, as indicated by the scaling exponent, Ds, which is close to 3 beyond the first four coordination spheres.

  7. Compatibility of candidate structural materials with static gallium

    International Nuclear Information System (INIS)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-01-01

    Scoping tests were conducted on compatibility of gallium with candidate structural materials, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chronimum. Type 316 stainless steel is least resistant and Nb-5 Mo-1 Zr alloy is most resistant to corrosion in static gallium. At 400 degrees C, corrosion rates are ∼4.0, 0.5, and 0.03 mm/y for Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than does nickel. The corrosion rates at 400 degrees C are ≥90 and 17 mm/y, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400 degrees C, corrosion occurs primarily by dissolution accompanied by formation of metal/gallium intermetallic compounds

  8. Gallium accumulation in early pulmonary Pneumocystis carinii infection

    International Nuclear Information System (INIS)

    Stevens, D.A.; Allegra, J.C.

    1986-01-01

    The accumulation of gallium 67 citrate in pulmonary Pneumocystis carinii is well known. The sensitivity of gallium uptake in detecting early inflammatory processes, even when conventional roentgenograms are normal, would seem to make it possible in immunocompromised patients to make a presumptive diagnosis of this serious infection early in its course without using invasive techniques to demonstrate the organism. However, the presence of gallium uptake in radiation pneumonitis, pulmonary drug toxicity, and other processes that also occur in this group limit its usefulness. In our two patients--a young woman with Hodgkin's disease and an elderly woman with small cell lung cancer--this technique proved helpful. Although the latter patient was successfully treated empirically, such empiric treatment should be reserved for patients unable or unwilling to undergo invasive tests. Pulmonary gallium uptake in patients with respiratory symptoms, even with a normal chest film, should prompt attempts to directly demonstrate the organism

  9. Gallium 67 scintigraphic examination of dilated myocardiopathies

    International Nuclear Information System (INIS)

    Lanfranchi, J.; Sachs, R.N.; Beaudet, B.; Deblock, C.; Tellier, P.

    1989-01-01

    Twenty-seven patients were diagnosed as having dilated cardiomyopathies, based on increases in the cardiothoracic index > 0.50, in the diastolic and systolic diameters of the left ventricle, and in the telediastolic volume of the left ventricle, which was indexed by body surface determined by contrast ventriculography. They underwent gallium 67 scintigraphic examination of the myocardium, in order to non-invasively detect the presence of an inflammatory infiltrate. Fifteen of them also had endomyocardial biopsies and all had virology check-up. The results were disappointing. Only in one case was the scintigraphic image undeniably positive; in 20 other patients the findings were dubious or negative. This technique did not demonstrate the presence of an inflammatory infiltrate and thus an association between myocarditis and dilated cardiomyopathy, could not be established [fr

  10. Cavity optomechanics in gallium phosphide microdisks

    International Nuclear Information System (INIS)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-01-01

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 10 5 and mode volumes 3 , and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 10 4 intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g 0 /2π∼30 kHz for the fundamental mechanical radial breathing mode at 488 MHz

  11. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  12. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

    2011-01-01

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  13. Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

    Science.gov (United States)

    Demchenko, D. O.; Diallo, I. C.; Reshchikov, M. A.

    2018-05-01

    The problem of magnesium acceptor in gallium nitride is that experimental photoluminescence measurements clearly reveal a shallow defect state, while most theoretical predictions favor a localized polaronic defect state. To resolve this contradiction, we calculate properties of magnesium acceptor using the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, tuned to fulfill the generalized Koopmans condition. We test Koopmans tuning of HSE for defect calculations in GaN using two contrasting test cases: a deep state of gallium vacancy and a shallow state of magnesium acceptor. The obtained parametrization of HSE allows calculations of optical properties of acceptors using neutral defect-state eigenvalues, without relying on corrections due to charged defects in periodic supercells. Optical transitions and vibrational properties of M gGa defect are analyzed to bring the dual (shallow and deep) nature of this defect into accord with experimental photoluminescence measurements of the ultraviolet band in Mg-doped GaN samples.

  14. Effect of the chloride ions on the hydrolysis of praseodymium in a 2M ion force media

    International Nuclear Information System (INIS)

    Lopez G, H.; Jimenez R, M.; Solache R, M.; Rojas H, A.

    2004-01-01

    The constants of the product of solubility and the first of hydrolysis were determined of the Praseodymium in media 2M of NaClO 4 and 2M of NaCl, to 303 K and under conditions free of CO 2 . The diagram of solubility was obtained (pPr (ac) - pC H ), by means of a radiochemical method and with it was established the pC H that limit the saturation and non saturation areas; that diagram allowed, also, to calculate the constant of the product of solubility. Also, it was adjusted with the polynomial of solubility equation, that it allowed to determine and to check the values of the constants of the product of solubility and the first of hydrolysis. Independently, it was determined the first constant of hydrolysis of the element, by means of potentiometric titrations whose data were treated with the computer program named SUPERQUAD and with the adjustment of the equation of the average number of bonds. It was also calculates the log constant β Pr,Cl of the specie PrCI 2+ starting from the hydrolysis constants obtained in the perchlorate and chloride media. (Author)

  15. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  16. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    it as-grown and it densifies as the H leaves when annealed above approximately 500 °C. This densification causes the film to contract, becoming...tensile. The final deposition recipe shown in the Appendix, Section 2 was found after numerous trials and results in a minimum between compressive...marks b) ULVAC etch: 500 -W ICP, 50-W RIE, 4 mT, 16-sccm BCl3, 4-sccm Ar, 12 s (~50 nm)  GaAs etches at 7.54 nm/s after 6-s etch delay. PR etches at

  17. Recovery of gallium from coal fly ash by a dual reactive extraction process

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, B.; Pazos, C.; Coca, J. [University of Oviedo, Oviedo (Spain). Dept. of Chemical Engineering and Environmental Technology

    1997-08-01

    This paper describes the extraction of gallium from coal fly ash by leaching and extraction with commercial extractants Amerlite LA-2 and LIX-54N dissolved in kerosene. Leaching of gallium and other metals from the fly ash was carried out with 6 M hydrochloric acid. The leaching liquor is first contacted with Amerlite LA-2 which extracts the gallium and iron. The iron is then precipitated with sodium hydroxide, while gallium remains in solution. Gallium is extracted selectively from the base solution with LIX 54; the resulting stripped solution contains 83% of the gallium present in the leaching liquor.

  18. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  19. Hilar accumulation of gallium-67 in patients with normal chest radiographs

    International Nuclear Information System (INIS)

    Hoshi, Hiroaki; Yamada, Hiroki; Kawahira, Kozaburo; Watanabe, Katsushi

    1982-01-01

    Gallium-67 scintigraphy is a useful screening test to detect malignant or inflammatory lesions. However, the accumulations of Gallium-67 in the normal pulmonary hilum are found in some cases. So, 277 cases with Gallium-67 scintigraphy were discussed. The hilar accumulation of Gallium-67 was classified into four grades, namely Grade 0: no Gallium-67 uptake, Grade I: low Gallium-67 uptake, Grade II: moderate Gallium-67 uptake, and Grade III: high Gallium-67 uptake. Gallium-67 uptake was found in 38 of 277 cases (14%). Thirty cases of these were estimated as Grade I (79%). Cases with Grade II were 20.3%, and only two cases were Grade III (0.7%). Gallium-67 accumulation, was bilateral in 28 cases out of 38 and cases with Gallium-67 accumulation increased with age. Twenty five of the 38 cases with Gallium-67 accumulation had such findings as suggesting old pulmonary inflammation though they had no symptoms of respiratory diseases. This study suggests that hilar Gallium-67 accumulation has no correlation with the active inflammation of the lymphnodes. (author)

  20. The europium and praseodymium hydrolysis in a 2M NaCl environment; La hidrolisis del europio y del praseodimio en un medio 2M de NaCl

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez R, M.; Lopez G, H.; Solache R, M.; Rojas H, A. [Instituto Nacional de Investigaciones Nucleares, Departamento de quimica, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    1998-07-01

    It was studied the europium and praseodymium hydrolysis in a 2M NaCl ion force environment at 303 K, through two methods: this one extraction with dissolvents (lanthanide-water-NaCl-dibenzoylmethane) in presence of a competitive ligand (diglycolic acid) and that one direct potentiometric titration, of soluble species, followed by a computer refining. The values of one or another techniques of the first hydrolysis constants obtained were similar, which demonstrates that the results are reliable. The set of data obtained on the stability constants of hydrolysis products allowed to draw up the distribution diagrams of chemical species, as europium as praseodymium in aqueous environment. (Author)

  1. Pr3+ doped biphasic TiO2 (rutile-brookite) nanorod arrays grown on activated carbon fibers: Hydrothermal synthesis and photocatalytic properties

    Science.gov (United States)

    Li, Min; Zhang, Xiaomei; Liu, Ying; Yang, Yi

    2018-05-01

    Praseodymium-doped biphasic TiO2 (rutile-brookite) nanorod arrays (Pr-TiO2 NRAs) were successfully prepared via a two-step hydrothermal reaction on activated carbon fibers (ACFs) which pre-coated with TiO2 nanoparticles at first step. The bicrystalline arrays grown on ACFs are primarily constructed by the well-aligned TiO2 nanorods growing along [0 0 1] direction, which were indicated by the results of SEM and XRD. The nanorods are uniform in diameter and length with about 250 nm and 2.5 μm. The composite photocatalyst with high specific surface area and well-aligned nanostructure are beneficial to enhance the adsorption capacity and even help to suppress electron-hole recombination effectively, which consequently revealed much better (2 times) catalytic performance than that of commercially available P25 TiO2 on methylene blue(MB) photodegradation. In addition, the existence of praseodymium in TiO2 gives rise to shift of absorption edge towards long wavelength, which was indicated by the results of UV-vis DRS. Photodegradation results reveal that Pr-doping significantly improves the activity of TiO2, which was 20% higher than that of undoped TiO2 NRAs for the photodegradation of MB in aqueous medium under visible light irradiation. Meanwhile, the doped amount of Pr had a tiny influence on the photocatalytic performance of the composites. In our experiment, 3% Pr-doped molar concentration was proven to be the relatively optimal dopant concentration for the doping of TiO2 NRAs. Moreover, the photocatalyst grown on ACFs substrates is favorable to reuse and photodegradation rate kept on 76% even after 4 times of reuse.

  2. Role of Gallium and labeled leukocyte scintigraphy in AIDS patient

    International Nuclear Information System (INIS)

    Palestro, C.J.; Goldsmith, S.J.

    1995-01-01

    Because AIDS patients frequently present with minimal symptomatology, radionuclide imaging with its ability to survey the entire body, is especially valuable. Gallium-67 citrate, the most commonly performed radionuclide study for localizing infection in these patients, is most useful for detecting opportunistic infections, especially in the thorax. A negative gallium scan, particularly when the chest X-ray is unremarkable, rules strongly against pulmonary disease. A negative gallium scan in a patient with an abnormal chest X-ray and Kaposi's sarcoma, suggests that the patient's respiratory distress is related to the neoplasm. Diffuse pulmonary parenchymal uptake of gallium in the HIV (+) patient is most often associated with PCP. While there are other causes of diffuse pulmonary uptake, the more intense or heterogeneous the uptake, the more likely the patient is to have PCP. Focal pulmonary uptake is usually associated with bacterial pneumonia although PCP may occasionally present in this fashion. Lymph node uptake of gallium is usually associated with Mycob acterium avium complex, tuberculosis, or Iymphoma. When corresponding abnormalities are present on thallium scintigraphy lymphoma is likely. Gallium positive, thallium negative, studies suggest mycobacterial disease. Labeled leukocyte imaging is not useful for detecting opportunistic infections probably because of the inflammatory response incited by these organisms. Leukocyte imaging is, however, more sensitive for detecting bacterial pneumonia. In the abdomen, gallium imaging is most useful for identifying lymphadenopathy, while labeled leukocyte imaging is superior for detecting AlDS-associated colitides. In summary, radionuclide studies are valuable diagnostic modalities in AIDS. Their success can be maximized by tailoring the study to the individual's needs

  3. Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

    2012-01-01

    Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

  4. Gallium a unique anti-resorptive agent in bone: Preclinical studies on its mechanisms of action

    International Nuclear Information System (INIS)

    Bockman, R.; Adelman, R.; Donnelly, R.; Brody, L.; Warrell, R.; Jones, K.W.

    1990-01-01

    The discovery of gallium as a new and unique agent for the treatment of metabolic bone disorders was in part fortuitous. Gallium is an exciting new therapeutic agent for the treatment of pathologic states characterized by accelerated bone resorption. Compared to other therapeutic metal compounds containing platinum or germanium, gallium affects its antiresorptive action without any evidence of a cytotoxic effect on bone cells. Gallium is unique amongst all therapeutically available antiresorptive agents in that it favors bone formation. 18 refs., 1 fig

  5. An electrochemical approach: Switching Structures of rare earth metal Praseodymium hexacyanoferrate and its application to sulfite sensor in Red Wine

    International Nuclear Information System (INIS)

    Devadas, Balamurugan; Sivakumar, Mani; Chen, Shen Ming; Cheemalapati, Srikanth

    2015-01-01

    Graphical abstract: Nucleation and growth of PrHCF and its application to sulfite oxidation in wine samples. - Highlights: • Electrochemical synthesis of PrHCF. • Switching structures of PrHCF. • Sulfite electrochemical sensor. • Wide linear range and low limit of detection. • Real sample application. - Abstract: Herein, we report a shape-controlled preparation of Praseodymium hexacyanoferrate (PrHCF) using a simple electrochemical technique. The electrochemically fabricated PrHCF modified glassy carbon electrodes (GCE) shows an excellent electrocatalytic activity towards sulfite oxidation. The morphology of PrHCF particles were controlled by carefully changing various synthesis conditions including electrochemical technique (cyclic voltammetry, amperometry and chemical), cations in the supporting electrolyte (K + , Na + , Li + and H + ), deposition cycles, molar ratio of precursors, and applied potential (-.2,0 and 0.2 V). The morphologies of the PrHCF was elucidated using scanning electron microscopy (SEM). The as-synthesized PrHCF was characterized using X-ray diffraction pattern (XRD), Infra-red (IR) and energy dispersive X-ray spectroscopy (EDX). The electrochemical oxidation of sulfite on PrHCF modified GCE was investigated using cyclic voltammetry (CV) and linear sweep voltammetry (LSV). The sensitivity of the as-developed sulfite sensor was determined to be 0.036 μA μM −1 cm −2 . The low limit of detection was determined to be 2.15 μM. The real time application of PrHCF modified GCE was confirmed through the determination of sulfite from red wine and tap water samples

  6. Realization of the Gallium Triple Point at NMIJ/AIST

    Science.gov (United States)

    Nakano, T.; Tamura, O.; Sakurai, H.

    2008-02-01

    The triple point of gallium has been realized by a calorimetric method using capsule-type standard platinum resistance thermometers (CSPRTs) and a small glass cell containing about 97 mmol (6.8 g) of gallium with a nominal purity of 99.99999%. The melting curve shows a very flat and relatively linear dependence on 1/ F in the region from 1/ F = 1 to 1/ F = 20 with a narrow width of the melting curve within 0.1 mK. Also, a large gallium triple-point cell was fabricated for the calibration of client-owned CSPRTs. The gallium triple-point cell consists of a PTFE crucible and a PTFE cap with a re-entrant well and a small vent. The PTFE cell contains 780 g of gallium from the same source as used for the small glass cell. The PTFE cell is completely covered by a stainless-steel jacket with a valve to enable evacuation of the cell. The melting curve of the large cell shows a flat plateau that remains within 0.03 mK over 10 days and that is reproducible within 0.05 mK over 8 months. The calibrated value of a CSPRT obtained using the large cell agrees with that obtained using the small glass cell within the uncertainties of the calibrations.

  7. Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

    International Nuclear Information System (INIS)

    Bell, E.C.

    1979-10-01

    The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

  8. Gallium scintigraphy in a case of septic cavernous sinus thrombosis

    International Nuclear Information System (INIS)

    Palestro, C.J.; Malat, J.; Gladstone, A.G.; Richman, A.H.

    1986-01-01

    Septic cavernous sinus thrombosis, a relatively uncommon disease entity, frequently can be fatal. Early diagnosis is imperative in order that appropriate treatment be instituted. A 59-year-old woman who was admitted to our institution with complaints of diplopia, blurred vision and fevers that developed following a tooth extraction is presented. Initial CT and lumbar puncture on the day of admission were totally normal. A repeat CT performed 48 hours after admission, on the same day as gallium imaging, demonstrated findings consistent with cavernous sinus thrombosis. Gallium imaging demonstrated intense uptake in the left cavernous sinus and left orbit as well as moderately increased activity in the right cavernous sinus and orbit, confirming infection. The patient was treated with antibiotics, and repeat CT and gallium imaging were performed ten days later, both of which demonstrated near total resolution of the disease process. Conceivably, if gallium imaging had been initiated on the day of admission it may have been the first study to demonstrate an infectious process in the cavernous sinus. Gallium imaging should be considered as a diagnostic tool in the noninvasive workup of this entity

  9. The role of gallium-67 scanning in febrile patients

    International Nuclear Information System (INIS)

    Mouratidis, B.; Lomas, F.

    1994-01-01

    The source of sepsis in febrile patients can be a difficult diagnostic problem. Gallium-67 has been utilized as a diagnostic tool in the evaluation of these patients. A retrospective review was done of 47 patients who presented with pyrexia of unknown origin (27 patients), postoperative fever (11 patients), septicaemia (4 patients) and miscellaneous sepsis (5 patients). Whole body imaging with Gallium-67 gave an overall sensitivity and specificity of 86 and 77%, respectively, which compares favourably with previous studies. The sensitivity and specificity was similar in all patient subgroups. Gallium-67 allowed for more effective and directed use of organ-specific imaging modalities, such as computed tomography, ultrasound and guided intervention, in localizing and defining the source of sepsis. Where more than one possible source of fever was present, Gallium-67 scanning correctly identified the activity of the different foci. Gallium-67 scanning should be used early in the evaluation of patients presenting with fever of uncertain origin. 9 refs., 5 tabs., 2 figs

  10. Investigation on gallium ions impacting monolayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xin; Zhao, Haiyan, E-mail: hyzhao@tsinghua.edu.cn; Yan, Dong; Pei, Jiayun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, P. R. Chinaand Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2015-06-15

    In this paper, the physical phenomena of gallium (Ga{sup +}) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga{sup +} ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga{sup +} ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm{sup 2}. Afterwards, the focused ion beam over 21.6 ion/nm{sup 2} is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  11. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  12. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  13. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

    2007-01-01

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  14. Diagnosis of abdominal abscesses with 67gallium

    International Nuclear Information System (INIS)

    Noguera, E.C.; Mothe, G.A.

    1987-01-01

    Twenty six patients were studied with 67 Gallium to detect and localize the site of intra-abdominal and intraperitoneal infection. They were divided in two groups: a) with and b) without physical symptoms that could localize an abcess in the abdominal cavity. All the patients with suppuration had persistent up-take of 67 Ga in one anatomic area of the abdomen, subsequently documented by computarized axial tomography (CAT) in 58% of the cases or by laparotomy in 88% of them. Scintigraphy with 67 Ga in the patients with recent surgery not only detected focal infection in 67% of the cases but excluded subphernic collection. In 78% of patients with prolonged fever, the infection was localized. There was no false positive result. The comparison in 56% of the cases with CAT demonstrated that both techniques are 100% sensitive for the diagnosis of abdominal suppurative processes. Three of the 26 patients, after six weeks of medical treatment, were restudied with 67 Ga and CAT, showing total resolution of their previous abnormalities. It is concluded that 67 Ga scintigraphy performed as the first study in febrile patients independent of the presence or absence of physical symptoms that could localize the abdominal infection, is sensitive for the detection and localization of an abdominal abscess and that a negative result excludes it. (Author) [es

  15. Biological mechanisms of gallium-67 tumor deposition

    International Nuclear Information System (INIS)

    Okuyama, Shinichi; Takeda, Shumpei; Sato, Tachio; Takusagawa, Kimihiko; Awano, Takayuki.

    1979-01-01

    This investigation was undertaken in order to clarify the tumor deposition mechanisms of 67 Ga citrate, a ''universal tumor labeler''. An interspecies comparison of various tumors in the rat and mouse indicated that its highest deposition was in the undifferentiated cell type. Amongst the siblings of experimental tumors, cellular membrane negative charge is greater in the free-cell types than the island-formers: a short-term labeling study revealed a greater 67 Ga deposition in the free-cell types. A subcellar fractionation showed an initial association of 67 Ga with the nuclear and membrane fractions, and a later transition to the lysosomal. Hypotonic lysis revealed a paralleled release of 67 Ga and lysosomal key enzymes. Morphological abnormality of the cancer lysosomes was thought to agree with their Ga retention. This property was clinically confirmed by a scintiscoring technique. Treatment with cold gallium of tumors modified the biological parameters of tumor growth: in vitro it suppressed cell proliferation, reduced saturation density; and produced cellular pleomorphism. In vivo it increased tumor consistency by reducing central necrosis and increasing the viable cell layer thickness. Thus, 67 Ga deposition is closely related to various biological parameters of malignancy including the cellular membrane negative charge as cancer is a membrane disorder, and the lysosomal morphology and function. (author)

  16. Selenium implantation in epitaxial gallium arsenide layers

    International Nuclear Information System (INIS)

    Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

    1981-01-01

    Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

  17. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  18. Electrical and optoelectronic properties of gallium nitride

    International Nuclear Information System (INIS)

    Flannery, Lorraine Barbara

    2002-01-01

    This thesis describes novel research carried out on two related topics, the electrical properties of n and p-type GaN and the use of GaN in the fabrication of UV photodetectors. The electrical properties of GaN were assessed mainly by Hall effect measurements, which play a crucial role in the determination of the concentration of shallow electrically active impurities and defects. Most of the Hall effect measurements were carried out on Si and unintentionally doped GaN layers grown on sapphire substrates using a Varian Modular Gen II MBE machine equipped with an Oxford Applied Research CARS25 RF or HD25 RF nitrogen source to supply the active nitrogen. It was necessary to consider parallel conduction in two channels to interpret the temperature dependent Hall effect characteristics of the highest purity layers. Parallel conduction was found to influence the transport properties of these layers even at room temperature and give rise to an increased compensation ratio. The impurity band was found to be located at 23 ± 7 meV below the conduction band in layers containing impurity densities less than 3.8 x 10 18 cm -3 but was found to broaden with increasing impurity content, reducing the activation energy to 5 ± 3 meV in layers containing impurity densities greater than ∼4.5 x 10 18 cm -3 . Doping studies were conducted on Mg doped GaN layers grown on sapphire substrates using the MBE and MOVPE growth techniques. The effect of the growth parameters on Mg incorporation was determined using SIMS and Hall effect measurements for the MBE samples sets. P-type conductivity was successfully demonstrated in Mg doped layers grown under nitrogen rich conditions with layer thickness greater than 0.9 μm using the CARS25 RF source. The highest hole density, p H and mobility, μ H of 9.6 x 10 17 cm -3 and 5.4 cm 2 V -1 s -1 respectively were recorded in the thickest layer grown (1.56 μm). P-type doping studies were also carried out on Mg doped GaN layers grown on GaAs (111)B

  19. Study of the solubility of yttrium, praseodymium, neodymium, and gadolinium sulfates in the presence of sodium and potassium in sulfuric-phosphoric acid solutions at 20 deg C

    International Nuclear Information System (INIS)

    Lokshin, Eh.P.; Tareeva, O.A.; Kashulina, T.G.

    2007-01-01

    The solubility of yttrium, praseodymium, neodymium, and gadolinium sulfates in the presence of sodium and potassium ions and the composition of solid phases were studied at 20 deg C in relation to the concentration of acids in sulfuric acid, phosphoric acid, and sulfuric-phosphoric acid solutions containing up to 36 wt % H 2 SO 4 and 33.12 g 1 -1 H 3 PO 4 . The formation of double sulfates of praseodymium and neodymium with sodium and potassium ions, as well as of gadolinium sulfate with sodium ions of the composition 1 : 1 was revealed. In water at 20 deg C, the solubility products of PrNa(SO 4 ) 2 ·H 2 O, NdNa(SO 4 ) 2 ·H 2 O, GdNa(SO 4 ) 2 ·H 2 O, PrK(SO 4 ) 2 ·H 2 O, and NdK(SO 4 ) 2 ·H 2 O are found to be 7.28x10 -8 , 7.84x10 -8 , 3.09x10 -6 , 3.02x10 -6 , and 1.70x10 -6 , respectively [ru

  20. Liquid gallium jet-plasma interaction studies in ISTTOK tokamak

    International Nuclear Information System (INIS)

    Gomes, R.B.; Fernandes, H.; Silva, C.; Sarakovskis, A.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I.; Alekseyv, A.

    2009-01-01

    Liquid metals have been pointed out as a suitable solution to solve problems related to the use of solid walls submitted to high power loads allowing, simultaneously, an efficient heat exhaustion process from fusion devices. The most promising candidate materials are lithium and gallium. However, lithium has a short liquid state temperature range when compared with gallium. To explore further this property, ISTTOK tokamak is being used to test the interaction of a free flying liquid gallium jet with the plasma. ISTTOK has been successfully operated with this jet without noticeable discharge degradation and no severe effect on the main plasma parameters or a significant plasma contamination by liquid metal. Additionally the response of an infrared sensor, intended to measure the jet surface temperature increase during its interaction with the plasma, has been studied. The jet power extraction capability is extrapolated from the heat flux profiles measured in ISTTOK plasmas.

  1. Gallium-67 imaging with low collimators and energy weighted acquisition

    International Nuclear Information System (INIS)

    Hamill, J.J.; DeVito, R.P.

    1990-01-01

    This paper reports that the medium and high energy collimators used in 67 Ga imaging have poorer resolution than low-energy collimators, such as the LEAP. The low energy collimators could be used for gallium imaging if the background under the 93 and 185 keV peaks could be reduced without degrading the signal-to-noise ratio unacceptably. energy weighted acquisition provides a means of accomplishing this background reduction. The authors have developed weighing functions for gallium imaging through LEAP and high resolution collimators. The resolution of the low energy collimators is realized while the background is comparable to, or better than, the background in normal, energy-window imaging with the medium energy collimator. The pixel noise is somewhat greater than the Poisson noise in normal gallium imaging, and some noise correlations, or noise texture, is introduced

  2. The Russian-American Gallium solar neutrino Experiment (SAGE)

    International Nuclear Information System (INIS)

    Bowles, T.J.

    1994-01-01

    The Russian-American Gallium Experiment (SAGE) began measurements of the integral flux of solar neutrinos using 30 tons of metallic gallium as the target in January 1990. The mass of the gallium was increased to 57 tons in September 1991 and SAGE began to count the decay of 71 Ge using both the K and L peaks in September 1992. The results indicate a deficit of about 40% of the flux predicted by the Standard Solar Model. The chemical extraction and counting techniques used by SAGE are presented, with particular attention on backgrounds. The present status, results, and future plans of SAGE are presented, along with a discussion of the possible physics implications

  3. Gallium scan in recurrent Hodgkin's disease in children

    International Nuclear Information System (INIS)

    Yeh, S.D.; Benua, R.S.; Tan, C.T.

    1979-01-01

    In 18 of 88 children with biopsy proven and previously untreated Hodgkin's disease, recurrence developed during a period from four to 53 months after therapy (median period, 22 months). In 16 patients in whom gallium scans were performed, 21 positive gallium scans were obtained during 26 episodes of recurrence. Abnormalities were noted in half of them during a period from one to 10 months prior to physical, laboratory, radiographic or histologic confirmation of recurrence (median period about 5 months). We have concluded that the gallium scan is very useful in initial workup and is sensitive in detecting early recurrence in children with Hodgkin's disease. Such scans are indicated when there is clinical suspicion of recurrence, when other modalities are unavailable or when the results of other studies are equivocal

  4. Surface Passivation of CIGS Solar Cells Using Gallium Oxide

    KAUST Repository

    Garud, Siddhartha

    2018-02-27

    This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

  5. Gallium-67 scanning in patients with malignant pleural mesothelioma

    International Nuclear Information System (INIS)

    Nakano, Takashi; Maeda, Juichiro; Iwahashi, Noriaki; Tamura, Shinsuke; Hada, Toshikazu; Higashino, Kazuya

    1990-01-01

    The findings of gallium-67 scans in eleven patients with malignant pleural mesothelioma were reviewed and compared to those of chest CT findings. All patients had an abnormal thoracic Ga-67 accumulation. Six out of 11 showed a diffuse accumulation over the entire involved hemithorax and a localized uptake was shown in 5. A marked diffuse thickening of pleura in the absence of adequate gallium accumulation was observed in one patient. Two out of 11 had a reduction of gallium uptake after having combination chemotherapy. These results suggest that a diffusely increased uptake over the entire involved hemithorax is the most characteristic finding of Ga-67 scan in malignant pleural mesothelioma, and that Ga-67 scans may be helpful as a valuable indicator of the proper therapy. However, the superiority of Ga-67 scan to thoracic CT as a means of determining the extent of disease process could not be verified. (author)

  6. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Technology and Physics of MBE. Plenum, New York. (1985) p.38 5. Shawn D. Burnham, Improved Understanding And Control Of Magnesium -Doped Gallium Nitride By...range in order to minimize Mg self-compensation or other kind of defects. The other straightforward method is to increase the magnesium concentration...tested using NaOH etching 22. The surface is resistant to the etching indicating that no polarity inversion occurs during the growth, even though Mg

  7. Photoelectrochemical reduction of carbon dioxide using Ge doped GaN nanowire photoanodes

    Directory of Open Access Journals (Sweden)

    Yichen Wang

    2015-11-01

    Full Text Available We report on the direct conversion of carbon dioxide (CO2 in a photoelectrochemical cell consisting of germanium doped gallium nitride nanowire anode and copper (Cu cathode. Various products including methane (CH4, carbon monoxide (CO, and formic acid (HCOOH were observed under light illumination. A Faradaic efficiency of ∼10% was measured for HCOOH. Furthermore, this photoelectrochemical system showed enhanced stability for 6 h CO2 reduction reaction on low cost, large area Si substrates.

  8. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

    2016-02-15

    The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

  9. Laser spectroscopy of gallium isotopes using the ISCOOL RFQ cooler

    CERN Multimedia

    Blaum, K; Kowalska, M; Ware, T; Procter, T J

    2007-01-01

    We propose to study the radioisotopes of gallium (Z=31) by collinear laser spectroscopy using the ISCOOL RFQ ion cooler. The proposed measurements on $^{62-83}$Ga will span both neutron-deficient and neutron-rich isotopes. Of key interest is the suggested development of a proton-skin in the neutron-deficient isotopes. The isotope shifts measured by laser spectroscopy will be uniquely sensitive to this feature. The measurements will also provide a wealth of new information on the gallium nuclear spins, static moments and nuclear charge radii.

  10. Status of the Soviet-American gallium experiment

    International Nuclear Information System (INIS)

    Anosov, O.L.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T.; Cherry, M.L.; Cleveland, B.T.; Davis, R. Jr.; Lande, K.; Kouzes, R.T.

    1993-01-01

    A radiochemical 71 Ga- 71 Ge experiment to determine the primary flux of neutrinos from the Sun began measurements of the solar neutrino flux at the Baksan Neutrino Observatory in 1990. The number of 71 Ge atoms extracted from 30 tons of gallium in 1990 and from 57 tons of gallium in 1991 was measured in twelve runs during the period of January 1990 to December 1991. The combined 1990 and 1991 data sets give a value of 58 + 17/ - 24 (stat.) ± 14 (syst.) SNU. This is to be compared with 132 SNU predicted by the Standard Solar Model. 2 tabs, 1 fig, 14 refs

  11. Early diagnosis of disc-space infection using gallium-67

    International Nuclear Information System (INIS)

    Norris, S.; Ehrlich, M.G.; Keim, D.E.; Guiterman, H.; McKusick, K.A.

    1978-01-01

    A 4-year-old boy had had progressive central lumbar pain and hamstring spasm. He had a normal lumbar-spine x-ray except for minimal L-5, S1 spondylolysis, but gave an abnormal gallium-67 scan in the region of the low lumbar spine. Eight weeks following intensive antibiotic therapy, confirmation of the diagnosis of disc-space infection was established by roentgenographic studies that demonstrated narrowing of the L 4 to 5 intervertebral disc space. A technetium-99m diphosphonate bone scan, performed concurrently with the gallium-67 study, was normal

  12. Leaching of gallium from gaiter granite, eastern desert, Egypt

    International Nuclear Information System (INIS)

    Zahran, M.A.; Mahmoud, KH.F.; Mahdy, M.A.; Abd El-Hamid, A.M.

    2006-01-01

    Preliminary leaching tests of gallium from some Egyptian granite rocks such as those of Gabal Gattar area was investigated by using 8 M HCl acid and sodium perchlorate as oxidant. To achieve the optimum leaching conditions, the factors affecting the leaching efficiency as the acid type and concentration, oxidant type and amount, leaching temperature, agitation time, solid / liquid ratio and the effect of grain size were studied. The complete chemical analysis of the collected samples was firstly carried out to determine the chemical features of the Gattarian granite. More than 97% of gallium content was leached when applying these optimum leaching conditions

  13. Latest results from the Soviet-American gallium experiment

    International Nuclear Information System (INIS)

    Gavrin, V.N.; Anosov, O.L.; Faizov, E.L.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mirmov, I.N.; Ostrinsky, A.V.; Pshukov, A.M.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zatsepin, G.T.; Bowles, T.J.; Elliott, S.R.; Nico, J.S.; O'Brien, H.A.; Wark, D.L.; Wilkerson, J.F.; Cleveland, B.T.; Davis, R. Jr.; Lande, K.; Cherry, M.L.; Kouzes, R.T.

    1992-01-01

    A radiochemical 71 Ga- 71 Ge experiment to determine the primary flux of neutrinos from the Sun began measurements of the solar neutrino flux at the Baksan Neutrino Observatory in 1990. The number of 71 Ge atoms extracted from 30 tons of gallium in 1990 and from 57 tons of gallium in 1991 was measured in twelve runs during the period of January 1990 to December 1991. The combined 1990 and 1991 data sets give a value of 58+17/-24 (stat)±14 (syst) SNU. This is to be compared with 132 SNU predicted by the Standard Solar Model

  14. White beam synchrotron x-ray topography of gallium arsenide

    International Nuclear Information System (INIS)

    Winter, J.M. Jr.; Green, R.E. Jr.; Corak, W.S.

    1988-01-01

    The defect structure of gallium arsenide was investigated using white beam transmission topography. The samples were cut and polished monocrystal substrates from different suppliers. The goal of the work was to determine the viability of the method for documenting various crystallographic defect structures and establishing their effect on the performance of integrated microwave circuits fabricated on the wafers. The principles of the technique, essentially identical to classical Laue x-ray diffraction, are outlined. Two distinct defect structures were determined in the topographs. Reasons for the defect structures were postulated and the application of the method for quality control assessments of manufacturer-supplied gallium arsenide substrates was assessed

  15. First results from the Soviet-American Gallium Experiment

    International Nuclear Information System (INIS)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I.; Davis, R. Jr.; Lande, K.; Cherry, M.L.; Kouzes, R.T.

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab

  16. Computer-assisted sequential quantitative analysis of gallium scans in pulmonary sarcoidosis

    International Nuclear Information System (INIS)

    Rohatgi, P.K.; Bates, H.R.; Noss, R.W.

    1985-01-01

    Fifty-one sequential gallium citrate scans were performed in 22 patients with biopsy-proven sarcoidosis. A computer-assisted quantitative analysis of these scans was performed to obtain a gallium score. The changes in gallium score were correlated with changes in serum angiotensin converting enzyme (SACE) activity and objective changes in clinical status. There was a good concordance between changes in gallium score, SACE activity and clinical assessment in patients with sarcoidosis, and changes in gallium index were slightly superior to SACE index in assessing activity of sarcoidosis. (author)

  17. The Soviet-American gallium experiment (SAGE)

    International Nuclear Information System (INIS)

    Garvey, G.T.

    1989-01-01

    The Soviet-American Gallium Experiment (SAGE) undertaking is a multi-institutional collaboration among scientists from the Institute for Nuclear Research, Moscow (INR), Los Alamos National Laboratory (LANL), and several US universities. It's purpose is to measure the number of low-energy electron neutrinos emitted from the Sun that arrive at this planet. As such, it is an extremely important experiment, touching on fundamental physics issues as well as solar dynamics. In contrast to the strategic overviews, plans, and hopes for intentional collaboration presented earlier today, SAGE is an ongoing working effort with high hopes of producing the first measurement of the Sun's low-energy flux. There are several international physics collaborations involving US and Soviet scientists at the large accelerator installations throughout the world. As the scale of research gets ever larger, requiring ever more resources and then larger collaborations. Much physics research lies solely in the realm of basic research so that governments feel easier about collaborations. Contacts between the US and USSR scientists interested in nuclear and particle physics goes back to the nineteen fifties and have continued with only minor interruptions since then. Over the past two decades the principal oversight of these activities has been through the Joint Coordinating Committee on the Fundamental Properties of Matter, supported by the DOE in the US and the State Committee for Atomic Energy in the USSR. The Academies of Science of both countries have been very helpful and supportive. Each venture has some distinguishing features; in the case of SAGE, the unique aspects are the collaboration between Soviet scientists and scientists at a DOE weapons laboratory and the fact that the experiment is carried out in a remote region of the USSR. The particular problems caused are discussed. 3 refs., 3 figs

  18. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  19. Uptake of gallium-67 citrate in clean surgical incisions after colorectal surgery

    International Nuclear Information System (INIS)

    Lin Wanyu; Wang Shyhjen; Tsai Shihchuan; Chao Tehsin

    2001-01-01

    Non-specific accumulation of gallium-67 citrate (gallium) in uncomplicated surgical incisions is not uncommon. It is important to know the normal pattern of gallium uptake at surgical incision sites in order to properly interpret the gallium scan when investigating possible wound infection in patients who have undergone abdominal surgery. We studied 42 patients without wound infection after colorectal surgery and performed gallium scans within 40 days after surgery. Patients were divided into three groups according to the interval between the operation and the scan. In group A (26 patients) gallium scan was performed within 7 days after surgery, in group B (8 patients) between 8 and 14 days after surgery, and in group C (8 patients) between 15 and 40 days after surgery. Our data showed that in group A, 61.5% had gallium accumulation at the surgical incision site. In group B, 50% had accumulation of gallium at the surgical incision site, while in group C only one patient (12.5%) showed gallium uptake. It is concluded that the incidence of increased gallium uptake at clean surgical incision sites is high after colorectal surgery. Nuclear medicine physicians should bear in mind the high incidence of non-specific gallium uptake at such sites during the interpretation of possible wound infection in patients after colorectal surgery. (orig.)

  20. Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

    International Nuclear Information System (INIS)

    Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

    1989-01-01

    Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake

  1. The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

    CERN Document Server

    Kozlov, V A

    2001-01-01

    Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

  2. Bremsstrahlung parameters of praseodymium-142 in different human tissues. A dosimetric perspective for 142Pr radionuclide therapy

    International Nuclear Information System (INIS)

    Bakht, M.K.; Jabal-Ameli, H.; Ahmadi, S.J.; Sadeghi, M.; Sadjadi, S.; Tenreiro, Claudio

    2012-01-01

    Praseodymium-142 [T 1/2 =19.12 h, E β -=2.162 MeV (96.3%), E γ =1575 keV (3.7%)] is one of the 141 Pr radioisotopes. Many studies have been attempted to assess the significance of usage 142 Pr in radionuclide therapy. In many studies, the dosimetric parameters of 142 Pr sources were calculated by modeling 142 Pr sources in the water phantom and scoring the energy deposited around it. However, the medical dosimetry calculations in water phantom consider Bremsstrahlung production, raising the question: ''How important is to simulate human tissues instead of using water phantom?'' This study answers these questions by estimation of 142 Pr Bremsstrahlung parameters. The Bremsstrahlung parameters of 142 Pr as therapeutic beta nuclides in different human tissues (adipose, blood, brain, breast, cell nucleus, eye lens, gastrointestinal tract, heart, kidney, liver, lung deflated, lymph, muscle, ovary, pancreas, cartilage, red marrow, spongiosa, yellow marrow, skin, spleen, testis, thyroid and different skeleton bones) were calculated by extending the national council for radiation protection model. The specific Bremsstrahlung constant (Γ Br ), probability of energy loss by beta during Bremsstrahlung emission (P Br ) and Bremsstrahlung activity (A release ) Br were estimated. It should be mentioned that Monte Carlo simulation was used for estimation of 142 Pr Bremsstrahlung activity based on the element compositions of different human tissues and the calculated exposures from the anthropomorphic phantoms. Γ Br for yellow marrow was smallest amount (1.1962 x 10 -3 C/kg-cm 2 /MBq-h) compared to the other tissues and highest for cortical bone (2.4764 x 10 -3 C/kg-cm 2 /MBq-h), and, overall, Γ Br for skeletal tissues were greater than other tissues. In addition, Γ Br breast was 1.8261 x 10 -3 C/kg-cm 2 /MBq-h which was greater than sacrum and spongiosa bones. Moreover, according to (A release ) Br of 142 Pr, the patients receiving 142 Pr do not have to be hospitalized for

  3. Wurtzite gallium phosphide has a direct-band gap

    NARCIS (Netherlands)

    Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong

  4. Amorphous gallium oxide grown by low-temperature PECVD

    KAUST Repository

    Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aï cha; Dö beli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe

    2018-01-01

    demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband

  5. Targeting Gallium to Cancer Cells through the Folate Receptor

    Directory of Open Access Journals (Sweden)

    Nerissa Viola-Villegas

    2008-01-01

    Full Text Available The development of gallium(III compounds as anti-cancer agents for both treatment and diagnosis is a rapidly developing field of research. Problems remain in exploring the full potential of gallium(III as a safe and successful therapeutic agent or as an imaging agent. One of the major issues is that gallium(III compounds have little tropism for cancer cells. We have combined the targeting properties of folic acid (FA with long chain liquid polymer poly(ethylene glycol (PEG 'spacers’. This FA-PEG unit has been coupled to the gallium coordination complex of 1,4,7,10-tetraazacyclo-dodecane-N, N′, N′, N′′-tetraacetic acid (DOTA through amide linkages for delivery into target cells overexpressing the folate receptor (FR. In vitro cytotoxicity assays were conducted against a multi-drug resistant ovarian cell line (A2780/AD that overexpresses the FR and contrasted against a FR free Chinese hamster ovary (CHO cell line. Results are rationalized taking into account stability studies conducted in RPMI 1640 media and HEPES buffer at pH 7.4.

  6. Gallium uptake in benign tumor of liver: case report

    International Nuclear Information System (INIS)

    Belanger, M.A.; Beauchamp, J.M.; Neitzschman, H.R.

    1975-01-01

    A case of positive tracer localization in a benign tumor of the liver on a 67 Ga-citrate scan is reported. The authors were unable to find any previous reports of positive localization of gallium in this type of liver tumor. (U.S.)

  7. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  8. Gallium Nitride MMICs for mm-Wave Power Operation

    NARCIS (Netherlands)

    Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.

    2009-01-01

    In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The

  9. Gallium determination with Rodamina B: a simple method

    International Nuclear Information System (INIS)

    Queiroz, R.R.U. de.

    1981-01-01

    A simple method for determining gallium with Rhodamine B, by the modification of the method proposed by Onishi and Sandell. The complex (RH) GaCl 4 is extracted with a mixture benzene-ethylacetate (3:1 V/V), from an aqueous medium 6 M in hydrochloric acid. The interference of foreign ions is studied. (C.G.C.) [pt

  10. Gallium67 scintigraphy in fibrinous pericarditis associated with bacterial endocarditis

    International Nuclear Information System (INIS)

    Martin, P.; Verhas, M.; Devriendt, J.; Goffin, Y.

    1982-01-01

    An 80-year-old man presented with pyrexia, progressive cardiac failure and inflammation. A diagnosis of pericarditisd associated with bacterial endocarditis was suggested from Gallium 67 scintigraphy and confirmed at autpsy. This case of fibrinous pericarditis without effusion could not be diagnosed by echography or routine cardiopulmonary scintigraphy. (orig.)

  11. Targeting Gallium to Cancer Cells through the Folate Receptor

    Directory of Open Access Journals (Sweden)

    Nerissa Viola-Villegas

    2008-01-01

    Full Text Available The development of gallium(III compounds as anti-cancer agents for both treatment and diagnosis is a rapidly developing field of research. Problems remain in exploring the full potential of gallium(III as a safe and successful therapeutic agent or as an imaging agent. One of the major issues is that gallium(III compounds have little tropism for cancer cells. We have combined the targeting properties of folic acid (FA with long chain liquid polymer poly(ethylene glycol (PEG ‘spacers’. This FA-PEG unit has been coupled to the gallium coordination complex of 1,4,7,10-tetraazacyclo-dodecane-N,N′,N′′,N′′′-tetraacetic acid (DOTA through amide linkages for delivery into target cells overexpressing the folate receptor (FR. In vitro cytotoxicity assays were conducted against a multi-drug resistant ovarian cell line (A2780/AD that overexpresses the FR and contrasted against a FR free Chinese hamster ovary (CHO cell line. Results are rationalized taking into account stability studies conducted in RPMI 1640 media and HEPES buffer at pH 7.4.

  12. Self- and zinc diffusion in gallium antimonide

    International Nuclear Information System (INIS)

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT

  13. Pr4N2S3 and Pr4N2Se3: two non-isostructural praseodymium(iii) nitride chalcogenides

    International Nuclear Information System (INIS)

    Lissner, Falk; Schleid, Thomas

    2005-01-01

    The non-isostructural nitride chalcogenides of praseodymium, Pr 4 N 2 S 3 and Pr 4 N 2 Se 3 , are formed by the reaction of the praseodymium metal with sodium azide (NaN 3 ), praseodymium trihalide (PrX 3 ; X = Cl, Br, I) and the respective chalcogen (sulfur or selenium) at 900 C in evacuated silica ampoules after seven days. Both crystallize monoclinically in space group C2/c (Pr 4 N 2 S 3 : a = 1788.57(9), b = 986.04(5), c = 1266.49(6) pm, β = 134.546(7) , Z = 8; Pr 4 N 2 Se 3 : a = 1311.76(7), b = 1017.03(5), c = 650.42(3) pm, β = 90.114(6) , Z = 4). The crystal structures of both compounds show a layered construction, dominated by N 3- -centred (Pr 3+ ) 4 tetrahedra which share a common edge first. Continuing linkage of the so resulting bitetrahedral [N 2 Pr 6 ] 12+ units via the non-connected vertices to layers according to [stack ∞ 2 ]{[N(Pr) 2/2 e (Pr') 2/2 v ] 3+ } forms different kinds of tetrahedral nets which can be described as layers consisting of ''four- and eight-rings'' for Pr 4 N 2 S 3 and as layers of ''six-rings'' for Pr 4 N 2 Se 3 . Whereas the crystal structure of Pr 4 N 2 S 3 exhibits four different Pr 3+ cations with coordination numbers of six (2 x) and seven (2 x) against N 3- and S 2- , the number of cations in the nitride selenide (Pr 4 N 2 Se 3 ) is reduced to half (Pr1 and Pr2) also having six- and sevenfold anionic coordination spheres. Further motifs for the connection of [NM 4 ] 9+ tetrahedra in crystal structures of nitride chalcogenides and halides of the rare-earth elements with ratios of N: M = 1: 2 are presented and discussed. (Abstract Copyright [2005], Wiley Periodicals, Inc.) [de

  14. Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

    Science.gov (United States)

    Sky, T. N.; Johansen, K. M.; Riise, H. N.; Svensson, B. G.; Vines, L.

    2018-02-01

    Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900-1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.

  15. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    Directory of Open Access Journals (Sweden)

    Minggang Xia

    2014-05-01

    Full Text Available The electrical and thermal conductivities are measured for individual zinc oxide (ZnO nanowires with and without gallium ion (Ga+ implantation at room temperature. Our results show that Ga+ implantation enhances electrical conductivity by one order of magnitude from 1.01 × 103 Ω−1m−1 to 1.46 × 104 Ω−1m−1 and reduces its thermal conductivity by one order of magnitude from 12.7 Wm−1K−1 to 1.22 Wm−1K−1 for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga+ implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  16. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  17. Doping mechanism in pure CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Werner, F.; Colombara, D.; Melchiorre, M.; Spindler, C.; Siebentritt, S. [Physics and Materials Science Research Unit, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux (Luxembourg); Valle, N.; El Adib, B. [Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Rue du Brill 41, L-4422 Belvaux (Luxembourg)

    2016-05-07

    We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe{sub 2} thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe{sub 2} solar cell absorbers.

  18. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  19. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires

    International Nuclear Information System (INIS)

    Wang, Zaien; Liu, Baodan; Yuan, Fang; Hu, Tao; Zhang, Guifeng; Dierre, Benjamin; Hirosaki, Naoto; Sekiguchi, Takashi; Jiang, Xin

    2014-01-01

    Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga 2 O 3 and Sb powders in NH 3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. Highlight: • Sb/P co-doped GaN nanowires were synthesized through a well-designed multi-channel chemical vapor deposition (CVD) process. • Sb/P co-doping leads to the crystallinity deterioration of GaN nanowires. • Sb/P co-doping caused the red-shift of GaN nanowires band-gap in UV range. • Compared with Sb doping, P atoms are more easy to incorporate into the GaN lattice

  20. Magnetic interactions in praseodymium ruthenate Pr{sub 3}RuO{sub 7} with fluorite-related structure

    Energy Technology Data Exchange (ETDEWEB)

    Inabayashi, Masaki; Doi, Yoshihiro; Wakeshima, Makoto; Hinatsu, Yukio, E-mail: hinatsu@sci.hokudai.ac.jp

    2017-06-15

    . Significant spin polarization is seen on the magnetic Pr and Ru ions, but there is also some on the O(1), (3) ligands of Ru. - Highlights: • New fluorite-related quaternary praseodymium ruthenates were prepared. • Pr{sub 3}RuO{sub 7} shows an antiferromagnetic transition at 55 K. • The Ru-O-Pr superexchange interactions are three-dimensional.

  1. Preparation of gallium-68 radiopharmaceuticals for positron tomography. Progress report, November 1, 1978-October 31, 1979

    International Nuclear Information System (INIS)

    Welch, M.J.

    1978-06-01

    Although the germanium-gallium generator is probably the only source of positron-emitting radionuclides that would enable the wide application of positron tomography, the generator system in use suffers from several major disadvantages. The most important of these is that the generator is eluted with EDTA, and EDTA forms a very strong chelate with gallium. In order to produce radiopharmaceuticals other than gallium-68 EDTA it is necessary to break the stable EDTA complex and remove all the EDTA. A new generator system using a solvent extraction system which will produce gallium-68 8-hydroxyquinoline, a weak chelate has been developed. Using this agent, several gallium-68 radiopharmaceuticals have been synthesized and tested in vitro and in vivo. Attempts have been made using polarographic and chromatographic techniques to investigate the stability of gallium-68 complexes with a series of cryptates

  2. Angiotensin-I-converting enzyme and gallium scan in noninvasive evaluation of sarcoidosis

    International Nuclear Information System (INIS)

    Nosal, A.; Schleissner, L.A.; Mishkin, F.S.; Lieberman, J.

    1979-01-01

    Angiotensin-converting enzyme assays and gallium-scan results were obtained from 27 patients with biopsy-proven, clinically active sarcoidosis. Twenty-three of these patients had elevated converting enzyme levels, and 22 had positive gallium-scan results. Three of four patients with normal or borderline-elevated levels of angiotensin-converting enzyme also had positive gallium-scan results. Of 156 nonsarcoid patients (pulmonary and other diseases), 27 were found to have elevated serum converting enzyme levels, and 25 of these had negative gallium-scan results. These results indicate that the combination of an assay of angiotensin-converting enzyme and gallium scan increases diagnostic specificity from 83% to 99% without sacrificing sensitivity. It was concluded that the concurrent use of angiotensin-converting enzyme assay and gallium scan is of value in the diagnosis of sarcoidosis

  3. Angiotensin-I-converting enzyme and gallium scan in noninvasive evaluation of sarcoidosis

    Energy Technology Data Exchange (ETDEWEB)

    Nosal, A. (Harbor General Hospital, Torrance, CA); Schleissner, L.A.; Mishkin, F.S.; Lieberman, J.

    1979-03-01

    Angiotensin-converting enzyme assays and gallium-scan results were obtained from 27 patients with biopsy-proven, clinically active sarcoidosis. Twenty-three of these patients had elevated converting enzyme levels, and 22 had positive gallium-scan results. Three of four patients with normal or borderline-elevated levels of angiotensin-converting enzyme also had positive gallium-scan results. Of 156 nonsarcoid patients (pulmonary and other diseases), 27 were found to have elevated serum converting enzyme levels, and 25 of these had negative gallium-scan results. These results indicate that the combination of an assay of angiotensin-converting enzyme and gallium scan increases diagnostic specificity from 83% to 99% without sacrificing sensitivity. It was concluded that the concurrent use of angiotensin-converting enzyme assay and gallium scan is of value in the diagnosis of sarcoidosis.

  4. Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

    Science.gov (United States)

    2003-03-01

    58: 1306 (1995). 15. Moxom, Jeremy. “Characterization of Mg doped GaN by positron annihilation spectroscopy .” Journal of Applied Physics, 92... semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence...short wavelength optoelectronic applications that are beyond the range of present semiconductor devices. The AlGaN and GaN materials have these

  5. Sorption of trace amounts of gallium (III) on iron (III) oxide

    Energy Technology Data Exchange (ETDEWEB)

    Music, S; Gessner, M; Wolf, R H.H. [Institut Rudjer Boskovic, Zagreb (Yugoslavia)

    1979-01-01

    The sorption of trace amounts of gallium(III) on iron(III) oxide has been studied as a function of pH. Optimum conditions have been found for the preconcentration of traces of gallium(III) by iron(III) oxide. The influence of surface active substances and of complexing agents on the sorption of trace amounts of gallium(III) on iron(III) oxide has been also studied.

  6. Critical study of the diagnostic value of lung scans using 67 gallium in respiratory diseases

    International Nuclear Information System (INIS)

    Perrin-Fayolle, M.; Brun, J.; Moret, R.; Kofman, J.; Ortonne, J.P.; Petigny, C.

    1975-01-01

    70 lungs scans using gallium 67 were carried out. Among the 41 malignant lesions, an uptake of the radio-isotope by the tumour in 51% of cases was noted. Among the 29 benign lesions, there were also 34% of cases which took up gallium 67. Their lack of reliability and selectivity make gallium 67 lung scans unsuitable for the recognition of the malignant nature of lung diseases [fr

  7. Sorption of trace amounts of gallium (III) on iron (III) oxide

    International Nuclear Information System (INIS)

    Music, S.; Gessner, M.; Wolf, R.H.H.

    1979-01-01

    The sorption of trace amounts of gallium(III) on iron(III) oxide has been studied as a function of pH. Optimum conditions have been found for the preconcentration of traces of gallium(III) by iron(III) oxide. The influence of surface active substances and of complexing agents on the sorption of trace amounts of gallium(III) on iron(III) oxide has been also studied. (orig.) [de

  8. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  9. Magnetic Exitations in Praseodymium

    DEFF Research Database (Denmark)

    Houmann, Jens Christian Gylden; Rainford, B. D.; Jensen, J.

    1979-01-01

    The magnetic excitations in a single crystal of dhcp Pr have been studied by inelastic neutron scattering. The excitations on the hexagonal sites, and their dependence on magnetic fields up to 43 kOe applied in the basal plane, have been analyzed in terms of a Hamiltonian in which exchange, crystal......-field, and magnetoelastic interactions are included. The exchange is found to be strongly anisotropic, and this anisotropy is manifested directly in a splitting of most branches of the dispersion relations. By considering a variety of magnetic properties, we have been able to determine the crystal-field level scheme...

  10. Phenolic aminocarboxylic acids as gallium-binding radiopharmaceuticals

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, F.C.

    1984-06-01

    The phenolic aminocarboxylic acids ethylenediamine di (o-hydroxyphenylacetic acid) (EDDHA) and N,N'-bis (2-hydroxybenzyl) ethylenediamine N,N'-diacetic acid (HBED) form gallium complexes having high stability constants which enable them to resist exchange of gallium with plasma transferrin. /sup 67/Ga complexes were synthesized with these ligands, placing substituent groups in the phenolic ring to direct excretion via the renal or hepatobiliary route. The amount of /sup 67/Ga-Br-EDDHA excreted via the hepatobiliary route was comparable with that of some of the sup(99m)Tc agents. Excretion of /sup 67/Ga-Br-HBED was similar but with delayed transit from the liver. /sup 67/Ga COOH-EDDHA was excreted exclusively via the renal route. These findings provide a basis for developing new /sup 67/Ga or /sup 68/Ga radiopharmaceuticals, the latter for use in positron emission tomography, using these phenolic aminocarboxylates.

  11. Phenolic aminocarboxylic acids as gallium-binding radiopharmaceuticals

    International Nuclear Information System (INIS)

    Hunt, F.C.

    1984-01-01

    The phenolic aminocarboxylic acids ethylenediamine di [o-hydroxyphenylacetic acid] (EDDHA) and N,N'-bis [2-hydroxybenzyl] ethylenediamine N,N'-diacetic acid (HBED) form gallium complexes having high stability constants which enable them to resist exchange of gallium with plasma transferrin. 67 Ga complexes were synthesized with these ligands, placing substituent groups in the phenolic ring to direct excretion via the renal or hepatobiliary route. The amount of 67 Ga-Br-EDDHA excreted via the hepatobiliary route was comparable with that of some of the sup(99m)Tc agents. Excretion of 67 Ga-Br-HBED was similar but with delayed transit from the liver. 67 Ga COOH-EDDHA was excreted exclusively via the renal route. These findings provide a basis for developing new 67 Ga or 68 Ga radiopharmaceuticals, the latter for use in positron emission tomography, using these phenolic aminocarboxylates. (orig.) [de

  12. Phenolic aminocarboxylic acids as gallium-binding radiopharmaceuticals.

    Science.gov (United States)

    Hunt, F C

    1984-06-01

    The phenolic aminocarboxylic acids ethylenediamine di [o-hydroxyphenylacetic acid] (EDDHA) and N,N'-bis [2-hydroxybenzyl] ethylenediamine N,N'-diacetic acid (HBED) form gallium complexes having high stability constants which enable them to resist exchange of gallium with plasma transferrin. 67Ga complexes were synthesized with these ligands, placing substituent groups in the phenolic ring to direct excretion via the renal or hepatobiliary route. The amount of 67Ga-Br-EDDHA excreted via the hepatobiliary route was comparable with that of some of the 99mTc agents. Excretion of 67Ga-Br-HBED was similar but with delayed transit from the liver. 67Ga COOH-EDDHA was excreted exclusively via the renal route. These findings provide a basis for developing new 67Ga or 68Ga radiopharmaceuticals, the latter for use in positron emission tomography, using these phenolic aminocarboxylates.

  13. Usefulness of gallium imaging in the evaluation of lung cancer

    International Nuclear Information System (INIS)

    Alazraki, N.

    1980-01-01

    The current enthusiasm for gallium (Ga) citrate as a tumor imaging agent reflects the need of clinical medicine for a good tumor imaging agent. Ga-67 was most consistently and reliably taken up in lung tumors, with sensitivities of Ga imaging positivity in lung cancer ranging from 85 to 95%. Subsequent studies on Ga-67 led to the recognition of its preferential concentration in inflammatory lesions and abscess. These reports resulted in the clinical application of Ga-67 imaging as a diagnostic tool in the evaluation of patients with suspected abscesses. Mechanisms of Ga localization in tumor and inflammatory lesions are not currently well understood. Data regarding the thresholds of various factors which determine visibility of a lung tumor by Ga-67 imaging have been described in some detail. The factors include lesion size, depth in tissue, gallium concentration in tumor relative to background, type of film and instrumentation used, and count rates obtained

  14. Electrophoretic Deposition of Gallium with High Deposition Rate

    Directory of Open Access Journals (Sweden)

    Hanfei Zhang

    2014-12-01

    Full Text Available In this work, electrophoretic deposition (EPD is reported to form gallium thin film with high deposition rate and low cost while avoiding the highly toxic chemicals typically used in electroplating. A maximum deposition rate of ~0.6 μm/min, almost one order of magnitude higher than the typical value reported for electroplating, is obtained when employing a set of proper deposition parameters. The thickness of the film is shown to increase with deposition time when sequential deposition is employed. The concentration of Mg(NO32, the charging salt, is also found to be a critical factor to control the deposition rate. Various gallium micropatterns are obtained by masking the substrate during the process, demonstrating process compatibility with microfabrication. The reported novel approach can potentially be employed in a broad range of applications with Ga as a raw material, including microelectronics, photovoltaic cells, and flexible liquid metal microelectrodes.

  15. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Zhu, Tongtong; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Quan, Qimin [Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  16. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    International Nuclear Information System (INIS)

    Niu, Nan; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

    2015-01-01

    We report exceptionally low thresholds (9.1 μJ/cm 2 ) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance

  17. Neutron detection using boron gallium nitride semiconductor material

    Directory of Open Access Journals (Sweden)

    Katsuhiro Atsumi

    2014-03-01

    Full Text Available In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  18. Concentration of gallium in the Permo-Carboniferous coals of China

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Cunliang; Qin, Shenjun; Yang, Yinchao; Li, Yanheng; Lin, Mingyue [Hebei University of Engineering, Handan (China)

    2009-10-15

    Gallium is widely used in electronic industry and its current price is about 500 US dollars per kilogram. It has been found that its contents are very high in Permo-Carboniferous coal of China. In order to look for valuable associated gallium deposits in coal, gallium contents of 177 coal samples were determined by using inductively coupled plasma-mass spectrometry (ICP-MS) and the data of 873 coal samples from Chinese Permo-Carboniferous coalfields were collected. The results show that the average gallium concentration of Chinese Permo-Carboniferous coals is 15.49{mu}g{center_dot}g{sup -1}. There are two concentration types of gallium in Chinese Permo-Carboniferous coals: one type is that gallium has enriched to an ore deposit, and another type is that gallium is locally enriched in coal seams, but has not formed a valuable associated gallium ore deposit. The gallium concentration in Chinese Permo-Carboniferous coal may have several different sources: concentration in sedimentation stage, magmatic hydrothermal inputs and low-temperature hydrothermal fluids.

  19. Cutaneous gallium uptake in patients with AIDS with mycobacterium avium-intracellulare septicemia

    International Nuclear Information System (INIS)

    Allwright, S.J.; Chapman, P.R.; Antico, V.F.; Gruenewald, S.M.

    1988-01-01

    Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection

  20. A case of muscular sarcoidosis diagnosed by gallium-67 scintigraphy and magnetic resonance imaging

    International Nuclear Information System (INIS)

    Sohn, Hyung Sun; Kim, Euy Neyng

    1999-01-01

    Gallium-67 scintigraphy is helpful in the assessment of active extrapulmonary sarcoidosis. Muscular involvement of sarcoidosis is often asymptomatic or nonspecific, and laboratory examinations do not provide convincing evidence of muscular involvement. We report a case of muscular sarcoidosis, which was detected by gallium-67 scintigraphy. In a patient who was suffering from fever and arthalgia of knee joint, gallium-67 scintigraphy showed mediastinal and hilar involvement of sarcoidosis with unexpected extensive muscular uptake. Magnetic resonance imaging revealed the detailed depiction of intramuscular infiltration of sarcoid granuloma. Gallium-67 scintigraphy is useful in detecting inflammatory muscular involvement of sarcoidosis as well as other multiorgan involvement

  1. Study on the influence of optical electronegativity of fluoride host structures on the crystal field components' position of the [Xe]4f15d1-configuration of trivalent praseodymium

    International Nuclear Information System (INIS)

    Herden, Benjamin

    2014-03-01

    As alternative radiation sources for mercury containing lamps LEDs cover the normal range, but efficient alternatives for UV radiations are still not available. Xenon excimer discharge lamps could be candidate as alternatives to mercury low-pressure discharge lamps. The discharge wavelength of these lamps is 172 nm that has to be converted in other spectral ranges. The theses deals with trivalent praseodymium as activator ion in binary and ternary fluoride host structures. The host structure and the crystallographic position of the praseodymium ion influence the development of emissions line and bands and the energetic position of the emission. The results are explained by the interaction of the nephelauxetic effect and the crystal field splitting of 5d orbitals, called optical electronegativity.

  2. Redox behavior of a low-doped Pr-CeO{sub 2}(111) surface. A DFT+U study

    Energy Technology Data Exchange (ETDEWEB)

    Milberg, Brian [ITHES, UBA-CONICET, Departamento de Ingeniería Química, Pabellón de Industrias, Ciudad Universitaria, 1428 Buenos Aires (Argentina); Juan, Alfredo [Departamento de Física & IFISUR, UNS-CONICET, Avda. Alem 1253, 8000 Bahía Blanca (Argentina); Irigoyen, Beatriz, E-mail: beatriz@di.fcen.uba.ar [ITHES, UBA-CONICET, Departamento de Ingeniería Química, Pabellón de Industrias, Ciudad Universitaria, 1428 Buenos Aires (Argentina)

    2017-04-15

    Highlights: • Pr doping facilitates oxygen donation due to the easy formation of Pr{sup 3+}/Pr{sup 4+} and Ce{sup 3+}/Ce{sup 4+} redox couples. • Pr doping also favors the formation of superoxide (O{sub 2}{sup −}) radicals on surface O-holes. • CO can be oxidized by superoxide radical forming a CO{sub 2} molecule floating on the surface. • CO can also interact on the (O{sub 2}{sup −})/Pr{sup 3+} interphase and forms weakly adsorbed carbonate-type intermediates. - Abstract: In this work, we investigated the redox behavior (donation and replenishing of oxygen) of a low praseodymium (Pr)-doped CeO{sub 2}(111) surface. We considered a 3.7 at.% Pr doping and performed density functional calculations using the GGA formalism with the ‘U’ correction on Ce(4f) and Pr(4f) orbitals. Our results indicate that Pr doping promotes oxygen donation by lowering the energy necessary to form surface anionic vacancies. When the Ce{sub 0.963}Pr{sub 0.037}O{sub 2}(111) surface donates one oxygen, the two excess electrons locate on Pr and Ce cations and reduce them to Pr{sup 3+} and Ce{sup 3+} ones. Praseodymium doping also favors the activation of O{sub 2} molecule on surface O-holes, leading to formation of a superoxide (O{sub 2}{sup −}) radical as well as to reoxidation of the Ce{sup 3+} cation to Ce{sup 4+} one. Additionally, we used the CO molecular adsorption for testing the reactivity of those superoxide species. The calculations expose the ability of these radicals to oxidize CO forming a CO{sub 2} molecule floating on the surface. However, when the superoxide is in the immediate vicinity of Pr dopant a carbonate-type species is formed. Our theoretical results may help to gain insight into redox properties and improved catalytic performance of low-doped Pr-CeO{sub 2} solids.

  3. Latest progress in gallium-oxide electronic devices

    Science.gov (United States)

    Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

    2018-02-01

    Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

  4. The Russian-American Gallium solar neutrino Experiment

    International Nuclear Information System (INIS)

    Elliott, S.R.; Abdurashitov, J.N.

    1995-01-01

    The Russian-American Gallium solar neutrino Experiment (SAGE) is described. The solar neutrino flux measured by 31 extractions through October, 1993 is presented. The result of 69 ± 10 -7 +5 SNU is to be compared with a standard solar model prediction of 132 SNU. The status of a 51 Cr neutrino source irradiation to test the overall operation of the experiment is also presented

  5. Assessment of arsenic exposures and controls in gallium arsenide production.

    Science.gov (United States)

    Sheehy, J W; Jones, J H

    1993-02-01

    The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

  6. Diagnosis of mycotic abdominal aortic aneurysm using 67-gallium citrate

    International Nuclear Information System (INIS)

    Blumoff, R.L.; McCartney, W.; Jaques, P.; Johnson, G. Jr.

    1982-01-01

    Mycotic aneurysms of the abdominal aorta are uncommon, but potentially lethal problems. Clinical subtleties may suggest their presence, but in the past, definitive diagnosis has been dependent on surgical exploration or autopsy findings. A case is presented in which 67-gallium citrate abdominal scanning localized the site of sepsis in an abdominal aortic aneurysm and allowed for prompt and successful surgical therapy. This noninvasive technique is recommended as a adjunct in the diagnosis of mycotic abdominal aortic aneurysms

  7. Study of current instabilities in high resistivity gallium arsenide

    International Nuclear Information System (INIS)

    Barraud, A.

    1968-01-01

    We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

  8. Low-Temperature Processed Ga-Doped ZnO Coatings from Colloidal Inks

    KAUST Repository

    Della Gaspera, Enrico

    2013-03-06

    We present a new colloidal synthesis of gallium-doped zinc oxide nanocrystals that are transparent in the visible and absorb in the near-infrared. Thermal decomposition of zinc stearate and gallium nitrate after hot injection of the precursors in a mixture of organic amines leads to nanocrystals with tunable properties according to gallium amount. Substitutional Ga3+ ions trigger a plasmonic resonance in the infrared region resulting from an increase in the free electrons concentration. These nanocrystals can be deposited by spin coating, drop casting, and spray coating resulting in homogeneous and high-quality thin films. The optical transmission of the Ga-ZnO nanoparticle assemblies in the visible is greater than 90%, and at the same time, the near-infrared absorption of the nanocrystals is maintained in the films as well. Several strategies to improve the films electrical and optical properties have been presented, such as UV treatments to remove the organic compounds responsible for the observed interparticle resistance and reducing atmosphere treatments on both colloidal solutions and thin films to increase the free carriers concentration, enhancing electrical conductivity and infrared absorption. The electrical resistance of the nanoparticle assemblies is about 30 kΩ/sq for the as-deposited, UV-exposed films, and it drops down to 300 Ω/sq after annealing in forming gas at 450 °C, comparable with state of the art tin-doped indium oxide coatings deposited from nanocrystal inks. © 2013 American Chemical Society.

  9. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Migliorato, Piero [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA (United Kingdom)

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  10. Incidental diagnosis of pregnancy on bone and gallium scintigraphy

    International Nuclear Information System (INIS)

    Palestro, C.J.; Malat, J.; Collica, C.J.; Richman, A.H.

    1986-01-01

    Bone and gallium scintigraphy were performed as part of the diagnostic workup of a 21-yr-old woman who presented at our institution with a history of progressively worsening low back pain over a 1-wk period of time. The angiographic phase of the bone scan demonstrated a well-defined radionuclide blush within the pelvis just cephalad to the urinary bladder with persistent hyperemia noted in the blood-pool image. We attribute these findings to a uterine blush secondary to the pronounced uterine muscular hyperplasia, hyperemia, and edema that accompany pregnancy. Gallium scintigraphy demonstrated intense bilateral breast accumulation of the imaging agent in a typical doughnut pattern which is commonly found in the prelactating and lactating breast. Also demonstrated was apparent gallium accumulation in the placenta. This case is presented to emphasize the radionuclide findings that occur during pregnancy, particularly the incidental finding of radionuclide blush during the angiographic phase of a radionuclide scintigraphy which should alert the nuclear physician to the possibility of pregnancy in a woman of childbearing age

  11. Challenges for critical raw material recovery from WEEE - The case study of gallium.

    Science.gov (United States)

    Ueberschaar, Maximilian; Otto, Sarah Julie; Rotter, Vera Susanne

    2017-02-01

    Gallium and gallium compounds are more frequently used in future oriented technologies such as photovoltaics, light diodes and semiconductor technology. In the long term the supply risk is estimated to be critical. Germany is one of the major primary gallium producer, recycler of gallium from new scrap and GaAs wafer producer. Therefore, new concepts for a resource saving handling of gallium and appropriate recycling strategies have to be designed. This study focus on options for a possible recycling of gallium from waste electric and electronic equipment. To identify first starting points, a substance flow analysis was carried out for gallium applied in integrated circuits applied on printed circuit boards and for LEDs used for background lighting in Germany in 2012. Moreover, integrated circuits (radio amplifier chips) were investigated in detail to deduce first approaches for a recycling of such components. An analysis of recycling barriers was carried out in order to investigate general opportunities and risks for the recycling of gallium from chips and LEDs. Results show, that significant gallium losses arose in primary production and in waste management. 93±11%, equivalent to 43,000±4700kg of the total gallium potential was lost over the whole primary production process until applied in electronic goods. The largest share of 14,000±2300kggallium was lost in the production process of primary raw materials. The subsequent refining process was related to additional 6900±3700kg and the chip and wafer production to 21,700±3200kg lost gallium. Results for the waste management revealed only low collection rates for related end-of-life devices. Not collected devices held 300 ± 200 kg gallium. Due to the fact, that current waste management processes do not recover gallium, further 80 ± 10 kg gallium were lost. A thermal pre-treatment of the chips, followed by a manual separation allowed an isolation of gallium rich fractions, with gallium mass fractions up to

  12. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

    International Nuclear Information System (INIS)

    Brendt, Jochen

    2011-01-01

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  13. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    Science.gov (United States)

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  14. Elastic properties of crystalline and liquid gallium at high pressures

    Science.gov (United States)

    Lyapin, A. G.; Gromnitskaya, E. L.; Yagafarov, O. F.; Stal'Gorova, O. V.; Brazhkin, V. V.

    2008-11-01

    The elastic properties of gallium, such as the bulk modulus B, the shear modulus G, and the Poisson’s ratio σ, are investigated and the relative change in the volume is determined in the stability regions of the Ga I, Ga II, and liquid phases at pressures of up to 1.7 GPa. The observed lines of the Ga I-Ga II phase transition and the melting curves of the Ga I and Ga II phases are in good agreement with the known phase diagram of gallium; in this case, the coordinates of the Ga I-Ga II-melt triple point are determined to be 1.24 ± 0.40 GPa and 277 ± 2 K. It is shown that the Ga I-Ga II phase transition is accompanied by a considerable decrease in the moduli B (by 30%) and G (by 55%) and an increase in the density by 5.7%. The Poisson’s ratio exhibits a jump from typically covalent values of approximately 0.22-0.25 to values of approximately 0.32-0.33, which are characteristic of metals. The observed behavior of the elastic characteristics is described in the framework of the model of the phase transition from a “quasi-molecular” (partially covalent) metal state to a “normal” metal state. An increase in the Poisson’s ratio in the Ga I phase from 0.22 to 0.25 with an increase in the pressure can be interpreted as a decrease in the degree of covalence, i.e., the degree of spatial anisotropy of the electron density along the bonds, whereas the large value of the pressure derivative of the bulk modulus (equal to approximately 8) observed up to the transition to the Ga II phase or the melt is associated not only with the quasicovalent nature of the Ga I phase but also with the structural features. In view of the presence of seven neighbors for each gallium atom in the Ga I phase, the gallium lattice can be treated as a structure intermediate between typical open-packed and close-packed structures. Premelting effects, such as a flattening of the isothermal dependence of the shear modulus G( p) with increasing pressure and an increase in the slope of the

  15. Elastic properties of crystalline and liquid gallium at high pressures

    International Nuclear Information System (INIS)

    Lyapin, A. G.; Gromnitskaya, E. L.; Yagafarov, O. F.; Stal'gorova, O. V.; Brazhkin, V. V.

    2008-01-01

    The elastic properties of gallium, such as the bulk modulus B, the shear modulus G, and the Poisson's ratio σ, are investigated and the relative change in the volume is determined in the stability regions of the Ga I, Ga II, and liquid phases at pressures of up to 1.7 GPa. The observed lines of the Ga I-Ga II phase transition and the melting curves of the Ga I and Ga II phases are in good agreement with the known phase diagram of gallium; in this case, the coordinates of the Ga I-Ga II-melt triple point are determined to be 1.24 ± 0.40 GPa and 277 ± 2 K. It is shown that the Ga I-Ga II phase transition is accompanied by a considerable decrease in the moduli B (by 30%) and G (by 55%) and an increase in the density by 5.7%. The Poisson's ratio exhibits a jump from typically covalent values of approximately 0.22-0.25 to values of approximately 0.32-0.33, which are characteristic of metals. The observed behavior of the elastic characteristics is described in the framework of the model of the phase transition from a 'quasi-molecular' (partially covalent) metal state to a 'normal' metal state. An increase in the Poisson's ratio in the Ga I phase from 0.22 to 0.25 with an increase in the pressure can be interpreted as a decrease in the degree of covalence, i.e., the degree of spatial anisotropy of the electron density along the bonds, whereas the large value of the pressure derivative of the bulk modulus (equal to approximately 8) observed up to the transition to the Ga II phase or the melt is associated not only with the quasicovalent nature of the Ga I phase but also with the structural features. In view of the presence of seven neighbors for each gallium atom in the Ga I phase, the gallium lattice can be treated as a structure intermediate between typical open-packed and close-packed structures. Premelting effects, such as a flattening of the isothermal dependence of the shear modulus G(p) with increasing pressure and an increase in the slope of the isobaric

  16. Use of thulium-sensitized rare earth-doped low phonon energy crystalline hosts for IR sources.

    Science.gov (United States)

    Ganem, Joseph; Bowman, Steven R

    2013-11-01

    Crystalline hosts with low phonon energies enable novel energy transfer processes when doped with rare earth ions. Two applications of energy transfer for rare earth ions in thulium-sensitized low phonon energy crystals that result in infrared luminescence are discussed. One application is an endothermic, phonon-assisted cross-relaxation process in thulium-doped yttrium chloride that converts lattice phonons to infrared emission, which raises the possibility of a fundamentally new method for achieving solid-state optical cooling. The other application is an optically pumped mid-IR phosphor using thulium-praseodymium-doped potassium lead chloride that converts 805-nm diode light to broadband emission from 4,000 to 5,500 nm. These two applications in chloride crystals are discussed in terms of critical radii calculated from Forster-Dexter energy transfer theory. It is found that the critical radii for electric dipole-dipole interactions in low phonon energy chloride crystals are comparable to those in conventional oxide and fluoride crystals. It is the reduction in multi-phonon relaxation rates in chloride crystals that enable these additional energy transfer processes and infrared luminescence.

  17. The Effects of Rare Earth Doping on Gallium Nitride Thin Films

    Science.gov (United States)

    2011-09-01

    capture in a solid state device,” Journal of Physics D: Applied Physics, vol. 43, p. 075502, 2010. [28] D. S. McGregor, M. F. Ohmes , R. E. Ortiz, A. S...1044, 1964. [5] M. Cardona and L. Ley , Photoemission in Solids: General Principles. Springer- Verlag New York, 1978. [6] C. Cohen-Tannoudji, B. Diu...A, vol. 50, no. 6, pp. 449–450, 1975. [46] L. Ley , R. A. Pollak, F. R. McFeely, S. P. Kowalczyk, and D. A. Shirley, “Total valence-band densities of

  18. and gallium-doped zinc oxide transparent conducting sol–gel thin films

    Indian Academy of Sciences (India)

    Administrator

    and 1∙76 × 10–2 Ω cm for GZO, when five multilayer coatings are made. The origin of ... indium source make its price increasing every day. On the other hand, zinc ..... Zhao Q, Xu X Y, Song X F, Zhang X Z, Yu D P, Li C P and. Guo L 2006 Appl.

  19. Mechanism of Doping Gallium Arsenide with Carbon Tetrachloride During Organometallic Vapor-Phase Epitaxy

    National Research Council Canada - National Science Library

    Warddrip, Michael

    1997-01-01

    .... In addition, the reaction of CC14 with the GaAs(001) surface was monitored in ultrahigh vacuum using infrared spectroscopy, temperature programmed desorption, and scanning tunneling microscopy...

  20. A theoretical study of lithium-doped gallium clusters by density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Sentuerk, Suekrue; Ekincioglu, Yavuz [Dumlupinar Univ., Kutahya (Turkey). Dept. of Physics

    2012-05-15

    The geometrical structures, stabilities, and electronic properties of Ga{sub n}Li (n = 1-13) clusters were investigated within the density functional theory (DFT). The impurity lithium atom enhances the stability of Ga{sub n}Li (n = 1-13) clusters, especially Ga{sub n}Li (n = 9-13) compared to Ga{sub n} (n = 9-14), that is at either apex position or side position. The dissociation energy, second-order energy differences, and the energy gaps between highest occupied and lowest unoccupied molecular orbital (HOMO-LUMO) indicate that the Ga{sub 7}Li, Ga{sub 9}Li, and Ga{sub 11}Li clusters are more stable within the studied cluster range. Moreover, the variation of the average bond length of Ga - Li is due to the surface effect, and the binding strength increases resulting from the increase of charge amount. (orig.)

  1. Effects of erbium‑and chromium‑doped yttrium scandium gallium ...

    African Journals Online (AJOL)

    2014-08-21

    Aug 21, 2014 ... The Er, Cr: YSGG laser also caused deep defects on composite, compomer, and RMGIC ... In amalgam samples, neither laser left significant harmful effects at the ..... The Er, Cr: YSGG laser left shallow irradiation markings.

  2. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  3. Phenolic aminocarboxylic acids - new chelating agents for modifying gallium-67 biodistribution

    International Nuclear Information System (INIS)

    Hunt, F.C.; Maddalena, D.J.

    1982-01-01

    The chelating agents EDDHA and HBED were synthesised with carboxyl or sulphonyl groups in the phenolic ring to favour urinary excretion on complexing with gallium. Carboxyl EDDMA was administered to tumor-bearing rats, and its concentration in the tumours and other tissues determined by scintigraphic imaging. The chelating agents increase tumour to blood ratios by chelating gallium in vivo. (U.K.)

  4. Phenolic aminocarboxylic acids - new chelating agents for modifying gallium-67 biodistribution

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, F.C.; Maddalena, D.J. (Australian Atomic Energy Commission Research Establishment, Lucas Heights)

    The chelating agents EDDHA and HBED were synthesised with carboxyl or sulphonyl groups in the phenolic ring to favour urinary excretion on complexing with gallium. Carboxyl EDDMA was administered to tumor-bearing rats, and its concentration in the tumours and other tissues determined by scintigraphic imaging. The chelating agents increase tumour to blood ratios by chelating gallium in vivo.

  5. Gallium nitrate: effects on cartilage during limb regeneration in the axolotl, Ambystoma mexicanum.

    Science.gov (United States)

    Tassava, Roy A; Mendenhall, Luciara; Apseloff, Glen; Gerber, Nicholas

    2002-09-01

    Gallium nitrate, a drug shown to have efficacy in Paget's disease of bone, hypercalcemia of malignancy, and a variety of experimental autoimmune diseases, also inhibits the growth of some types of cancer. We examined dose and timing of administration of gallium nitrate on limb regeneration in the Mexican axolotl, Ambystoma mexicanum. Administered by intraperitoneal injection, gallium nitrate inhibited limb regeneration in a dose-dependent manner. Gallium nitrate initially suppressed epithelial wound healing and subsequently distorted both anterior-posterior and proximo-distal chondrogenic patterns. Gallium nitrate given at three days after amputation severely inhibited regeneration at high doses (6.25 mg/axolotl) and altered the normal patterning of the regenerates at low doses (3.75 mg/axolotl). Administration of 6.25 mg of gallium nitrate at four or 14 days prior to amputation also inhibited regeneration. In amputated limbs of gallium-treated axolotls, the chondrocytes were lost from inside the radius/ulna. Limbs that regenerated after gallium treatment was terminated showed blastema formation preferentially over the ulna. New cartilage of the regenerate often attached to the sides of the existing radius/ulna proximally into the stump and less so to the distal cut ends. J. Exp. Zool. 293:384-394, 2002. Copyright 2002 Wiley-Liss, Inc.

  6. Patchy uptake of gallium in the lungs of AIDS patients with atypical mycobacterial infection

    International Nuclear Information System (INIS)

    Skarzynski, J.J.; Sherman, W.; Lee, H.K.; Berger, H.

    1987-01-01

    The gallium scans of seven AIDS patients who cultured positive for atypical mycobacterium were reviewed. Six cultured positive for Mycobacterium avium intracellulare, while one for Mycobacterium xenopi. A patchy uptake pattern of gallium in the lungs of these patients was identified

  7. Gallium-67 Citrate uptake in cryptoccal thyroiditis in a Homosexual male

    International Nuclear Information System (INIS)

    Machac, J.; Nejatheim, M.; Goldsmith, S.J.

    1985-01-01

    A case of disseminated cryptococcosis and autopsy proven cryptococcal thyroiditis is described in a homosexual male. Thyroid uptake of Gallium-67 citrate was seen one week prior to positive blood cultures. This finding was the sole indication of thyroid involvement. Focal Gallium uptake may be considered as an indication for biopsy and culture in the initial work up of this group of immunocompromised hosts

  8. Doping and synthesis method effect on zirconium silicate conductivity

    Directory of Open Access Journals (Sweden)

    Monrós, G.

    2006-06-01

    Full Text Available The colour mechanisms of blue V- ZrSiO4 and yellow Pr- ZrSiO4 ceramic pigments which strongly depend on both fluorine addition and synthesis method, are still controversial. Complex impedance has been used as a useful tool to differentiate the materials as a function of the synthesis method, microstructure and observed colour, going deeply into the resolution of controversies about the nature of colours. Representative samples of these doping pigmenting systems prepared by both classical ceramic process and sol-gel method have been studied by complex impedance analysis. Vanadium doped zircon enhances resistivity and activation energy compared to undoped zircon powder and turkish blue vanadium-zircon obtained by addition of NaF shows the highest bulk resistivity. Activation energy and conductivity decrease for Praseodymium doped zircon compared to undoped zircon. This feature is in agreement with the presence of cationic vacancies on green vanadiumzircon samples due to V4+ and V5+ coexistence and praseodymium oxide inclusions on Pr- ZrSiO4 yellow pigment.

    El mecanismo del color en el azul de los pigmentos cerámicos V- ZrSiO4 y amarillo de Pr- ZrSiO4 cuyos tinos dependen mucho de la presencia de fluoruros así como del método de preparación esta controvertido en la literatura. La impedancia compleja se ha utilizado como una herramienta útil para diferenciar los materiales en función del método de síntesis, la microestructura y el color con el fin de profundizar en la resolución de las controversias. Se han preparado muestras representativas de ambos sistemas dopados mediante diferentes métodos de síntesis cerámico y sol-gel que se han estudiado por análisis de impedancia compleja. El circón dopado con vanadio aumenta su resistividad y sus energía de activación con referencia a la muestra no dopada y la muestra turquesa obtenida por adición de NaF presenta la mayor resistividad. Las muestras dopadas con praseodimio disminuyen

  9. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  10. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Energy Technology Data Exchange (ETDEWEB)

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  11. Gallium-67 myocardial imaging for the detection of bacterial endocarditis

    Energy Technology Data Exchange (ETDEWEB)

    Wiseman, J.; Rouleau, J.; Rigo, P.; Strauss, H.W.; Pitt, B.

    1976-07-01

    Eleven patients with a clinical diagnosis of bacterial endocarditis underwent scintillation scanning of the precordial region 2--7 days after the intravenous administration of 3 mCi of gallium-67 citrate. Seven had positive scans, 3 of which were confirmed by postmortem imaging at autopsy. Serial images revealed the scans to be frequently negative at 48 hours and positive from 3 to 8 days following injection. Uptake was not seen in the region of the myocardium 48 hours or longer after the injection of 15 patients without endocarditis used as controls.

  12. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    Trumble, T.M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  13. Control of Surface Attack by Gallium Alloys in Electrical Contacts.

    Science.gov (United States)

    1986-03-28

    and atmospheric control but does not allow visual observation of the contact brushes. This machine is a small homopolar motor built from mild steel...collectors,gallium, homopolar devices,liquid metals,~- is. ABSTRACT ICNI.. .. w 41N"w -~dv.mp.d Wrllt by Itabata" * Electrical contact between a copp’er...32 5 Test rig with felt metal brushes 32 6 Homopolar test apparatus 33 7 Rewetting of alloy track 33 8 Alloy track after running with finger 34 brushes

  14. Catalytic behavior of gallium-containing mesoporous silicas

    Directory of Open Access Journals (Sweden)

    K. Bachari

    2017-02-01

    Full Text Available The vapor phase tert-butylation of anisole with tert-butanol reaction has been inspected over a series of Ga-FSM-16 with different Si/Ga ratios = 75, 35, 5 synthesized by intercalating kanemite using cetyltrimethylammonium bromide (CTMABr and gallium nitrate. The resulting samples were characterized by means of inductively coupled plasma (ICP technique, BET, BJH, XRD and a temperature–programed–desorption (TPD of pyridine. In addition, the influence of molar ratio, influence of temperature, weight hourly space velocity (WHSV and time on stream on the selectivity of products was investigated and the results are discussed.

  15. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    International Nuclear Information System (INIS)

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  16. Photo-dissociation of hydrogen passivated dopants in gallium arsenide

    International Nuclear Information System (INIS)

    Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

    2002-01-01

    A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

  17. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

    1992-07-01

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  18. Anomalous tensoelectric effects in gallium arsenide tunnel diodes

    Energy Technology Data Exchange (ETDEWEB)

    Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

    1988-02-01

    Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

  19. Gallium uptake in tryptophan-related pulmonary disease

    International Nuclear Information System (INIS)

    Kim, S.M.; Park, C.H.; Intenzo, C.M.; Patel, R.

    1991-01-01

    We describe a patient who developed fever, fatigue, muscle weakness, dyspnea, skin rash, and eosinophilia after taking high doses of tryptophan for insomnia for two years. A gallium-67 scan revealed diffuse increased uptake in the lung and no abnormal uptake in the muscular distribution. Bronchoscopy and biopsy confirmed inflammatory reactions with infiltration by eosinophils, mast cells, and lymphocytes. CT scan showed an interstitial alveolar pattern without fibrosis. EMG demonstrated diffuse myopathy. Muscle biopsy from the right thigh showed an inflammatory myositis with eosinophilic and lymphocytic infiltrations

  20. Gallium-67 myocardial imaging for the detection of bacterial endocarditis

    International Nuclear Information System (INIS)

    Wiseman, J.; Rouleau, J.; Rigo, P.; Strauss, H.W.; Pitt, B.

    1976-01-01

    Eleven patients with a clinical diagnosis of bacterial endocarditis underwent scintillation scanning of the precordial region 2--7 days after the intravenous administration of 3 mCi of gallium-67 citrate. Seven had positive scans, 3 of which were confirmed by postmortem imaging at autopsy. Serial images revealed the scans to be frequently negative at 48 hours and positive from 3 to 8 days following injection. Uptake was not seen in the region of the myocardium 48 hours or longer after the injection of 15 patients without endocarditis used as controls

  1. Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides.

    Science.gov (United States)

    Zhang, Kehao; Jariwala, Bhakti; Li, Jun; Briggs, Natalie C; Wang, Baoming; Ruzmetov, Dmitry; Burke, Robert A; Lerach, Jordan O; Ivanov, Tony G; Haque, Md; Feenstra, Randall M; Robinson, Joshua A

    2017-12-21

    Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthesis transfer, which can be fundamentally different from directly synthesized layers that are compatible with large scale industrial needs. Therefore, understanding the process/property relationship of synthetic heterostructures is priority for industrially relevant material architectures. Here we demonstrate the scalable synthesis of molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) via metal organic chemical vapor deposition (MOCVD) on gallium nitride (GaN), and elucidate the structure, chemistry, and vertical transport properties of the 2D/3D hybrid. We find that the 2D layer thickness and transition metal dichalcogenide (TMD) choice plays an important role in the transport properties of the hybrid structure, where monolayer TMDs exhibit direct tunneling through the layer, while transport in few layer TMDs on GaN is dominated by p-n diode behavior and varies with the 2D/3D hybrid structure. Kelvin probe force microscopy (KPFM), low energy electron microscopy (LEEM) and X-ray photoelectron spectroscopy (XPS) reveal a strong intrinsic dipole and charge transfer between n-MoS 2 and p-GaN, leading to a degraded interface and high p-type leakage current. Finally, we demonstrate integration of heterogeneous 2D layer stacks of MoS 2 /WSe 2 on GaN with atomically sharp interface. Monolayer MoS 2 /WSe 2 /n-GaN stacks lead to near Ohmic transport due to the tunneling and non-degenerated doping, while few layer stacking is Schottky barrier dominated.

  2. Electron-phonon relaxation and excited electron distribution in gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, V. P. [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Pervomayskaya st. 91, Yekaterinburg (Russian Federation); Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tyuterev, V. G., E-mail: valtyut00@mail.ru [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk (Russian Federation); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain); Echenique, P. M. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain)

    2016-08-28

    We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.

  3. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  4. Hydrogen Production from Water by Photolysis, Sonolysis and Sonophotolysis with Solid Solutions of Rare Earth, Gallium and Indium Oxides as Heterogeneous Catalysts

    Directory of Open Access Journals (Sweden)

    Marta Penconi

    2015-07-01

    Full Text Available In this work, we present the hydrogen production by photolysis, sonolysis and sonophotolysis of water in the presence of newly synthesized solid solutions of rare earth, gallium and indium oxides playing as catalysts. From the experiments of photolysis, we found that the best photocatalyst is the solid solution Y0.8Ga0.2InO3 doped by sulphur atoms. In experiments of sonolysis, we optimized the rate of hydrogen production by changing the amount of water, adding ethanol and tuning the power of our piezoelectric transducer. Finally, we performed sonolysis and sonophotolysis experiments in the presence of S:Y0.8Ga0.2InO3 finding a promising synergistic effect of UV-visible electromagnetic waves and 38 kHz ultrasound waves in producing H2.

  5. Gallium-67 citrate imaging in underground coal miners

    International Nuclear Information System (INIS)

    Kanner, R.E.; Barkman, H.W. Jr.; Rom, W.N.; Taylor, A.T. Jr.

    1985-01-01

    Twenty-two underground coal workers with 27 or more years of coal dust exposure were studied with gallium-67 citrate (Ga-67) imaging. Radiographic evidence of coal workers indicates that pneumoconiosis (CWP) was present in 12 subjects. The Ga-67 scan was abnormal in 11 of 12 with, and 9 of 10 without, CWP. The Ga-67 uptake index was significantly correlated with total dust exposure (p less than 0.01) and approached significant correlation with the radiographic profusion of the nodules (0.10 greater than p greater than 0.05). There was no correlation between Ga-67 uptake and spirometric function, which was normal in this group of patients; furthermore, increased lung uptake of gallium did not indicate a poor prognosis in subjects no longer exposed to coal dust. While coal dust exposure may be associated with positive Ga-67 lung scan in coal miners with many years of coal dust exposure, the scan provided no information not already available from a careful exposure history and a chest radiograph. Since Ga-67 scanning is a relatively expensive procedure the authors would recommend that its use in subjects with asymptomatic CWP be limited to an investigative role and not be made part of a routine evaluation

  6. Value of gallium 67 citrate scintigraphy in ophthalmology

    International Nuclear Information System (INIS)

    Ivanez-Alloschery, Monique.

    1978-01-01

    For ophthalmologists scintigraphy appears as a simple method to detect endoocular or endoorbital abnormalities. However none of the many scintigraphic methods described seems reliable enough to be used alone. One of the latest isotopic explorations using gallium 67 citrate, a tracer considered tumour-tropic might be able to solve this problem. The aim of this work is to judge the value of the method in the diagnosis of malignant endoocular and endoorbital tumours on the basis of 24 anatomoclinical observations. It may be concluded from this study that ocular gallium 67 citrate scintigraphy, which gave no clearly positive results at all but some doubtful results in the case of endoocular tumours more than 5 mm in diameter, is to be rejected; fluorescein angiography and ocular echograhy provide more elements for an accurate etiological diagnosis. Orbital scintigraphy on the other hand seems to be a necessary complement to a tomodensitometric examination since both methods offer diagnostic information without systematic recurse to carotid arteriography or orbital phlebography, sometimes dangerous for the patient [fr

  7. Gallium-67 scintiscanning of the lungs of AIDS patients

    International Nuclear Information System (INIS)

    Tatsch, K.; Knesewitsch, P.; Kirsch, C.M.; Kueffer, G.; Doerner, G.; Goebel, F.D.

    1988-01-01

    Thirty patients suffering from AIDS have been examined in this study. The stage of infection of the patients was defined according to the criteria of the Center for Disease Control, so that the study covered 22 patients with manifest AIDS, and 8 patients with AIDS-related complex. The lung scans have been made in all patients 48 and 72 hours after i.v. injection of 185 MBq of 67 Ga citrate, taking ventral and dorsal images with the gamma camera. In the scans recorded after 72 hours, ROI technique has been used to quantify the lung uptake and to put it in relation to uptake data of the soft neck tissue. The results show that gallium scintiscanning is far more sensitive in detecting opportunistic pneumonia in AIDS patients than is conventional chest radiography. If the latter detected any signs at all, the gallium scan did so about one to two weeks earlier in about one third of the patients. Pathologic accumulation in the scintiscan exceeding the range shown by the correlated radiograph indicate that in single cases extension of pneumonia can be underestimated when assessed by the radiograph alone. (orig./MG) [de

  8. Temperature-dependent structure evolution in liquid gallium

    International Nuclear Information System (INIS)

    Xiong, L.H.; Wang, X.D.; Yu, Q.; Zhang, H.; Zhang, F.; Sun, Y.; Cao, Q.P.; Xie, H.L.; Xiao, T.Q.; Zhang, D.X.; Wang, C.Z.; Ho, K.M.

    2017-01-01

    Temperature-dependent atomistic structure evolution of liquid gallium (Ga) has been investigated by using in situ high energy X-ray diffraction experiment and ab initio molecular dynamics simulation. Both experimental and theoretical results reveal the existence of a liquid structural change around 1000 K in liquid Ga. Below and above this temperature the liquid exhibits differences in activation energy for self-diffusion, temperature-dependent heat capacity, coordination numbers, density, viscosity, electric resistivity and thermoelectric power, which are reflected from structural changes of the bond-orientational order parameter Q_6, fraction of covalent dimers, averaged string length and local atomic packing. This finding will trigger more studies on the liquid-to-liquid crossover in metallic melts. - Graphical abstract: Atomistic structure evolution of liquid gallium has been investigated by using in situ high energy X-ray diffraction and ab initio molecular dynamics simulations, which both demonstrate the existence of a liquid structural change together with reported density, viscosity, electric resistivity and absolute thermoelectric power data.

  9. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  10. Mechanisms of thermal induced gallium removal (TIGR) from plutonium dioxide. Revision 1

    International Nuclear Information System (INIS)

    DeMuth, S.F.

    1998-01-01

    This study was initiated in order to determine the advantages of using a mixed-bed rather than a fixed-bed reactor (i.e. furnace) for separation of gallium from PuO 2 by the Thermal Induced Gallium Removal (TIGR) process. The TIGR process is based upon vaporization of gallium suboxide (Ga 2 O). from essentially nonvolatile PuO 2 . The gallium suboxide is formed by passing a reducing gas (i.e. hydrogen) over the PuO 2 particles. Several mechanisms are involved in the reduction and convective vaporization of the gallium suboxide. If the mass transfer of the gallium suboxide across the solid to gas interface significantly affects the processing time, it may be advantageous to use a mixed-bed reactor rather than a fixed-bed reactor. However, due to the difficulty of handling PuO 2 powder, a mixed-bed reactor should be used only if significant advantages can be demonstrated. Based on available data, the results of this study provide strong evidence that a mixed-bed reactor (i.e. furnace) would provide little advantage over a fixed-bed reactor. This is due to the conclusion that the mechanism of internal gallium diffusion within the particle has the predominant affect on the processing time. This is an important conclusion since the use of a mixed-bed would require development of more complex hardware than for a fixed-bed

  11. Technetium-99m DTPA aerosol and gallium scanning in acquired immune deficiency syndrome

    International Nuclear Information System (INIS)

    Picard, C.; Meignan, M.; Rosso, J.; Cinotti, L.; Mayaud, C.; Revuz, J.

    1987-01-01

    In 11 non-smoking AIDS patients suspected of pneumocystis carinii pneumonia (PCP), the results of Tc-99m DTPA aerosol clearances, gallium scans, and arterial blood gases were compared with those of bronchoalveolar lavage (BAL). Nine patients had PCP. All had increased clearances five times higher than the normal (5.6 +/- 2.3% X min-1 vs 1.1 +/- 0.34% X min-1, N = 10, P less than 0.001), suggesting an increased alveolar permeability. Gallium scans were abnormal in six patients but normal or slightly abnormal in the three others. Four of these nine patients had normal chest x-rays. In two of these the gallium scan was abnormal, but in the two others, only the increased Tc-99m DTPA clearances showed evidence of lung disease. Two patients had normal BAL, with normal clearances and gallium scans. Four out of the nine patients with PCP were studied after treatment. Three recovered and had normal clearance and gallium scans. One still had PCP with increased clearance but normal gallium scan. Gallium scanning and Tc-99m DTPA clearance are useful for detecting lung disease in AIDS patients with suspected PCP and for prompting BAL when chest x-rays and PaO 2 levels are normal. Due to its high sensitivity, a normal Tc-99m DTPA clearance could avoid BAL

  12. Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

    Energy Technology Data Exchange (ETDEWEB)

    Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

    1989-01-01

    Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.

  13. Superconductivity in gallium-implanted silicon; Supraleitung in Gallium-implantiertem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Skrotzki, Richard

    2016-07-12

    The following thesis is devoted to the electrical characterization of 10 nm thin layers consisting of amorphous Ga nanoclusters embedded in Ga-doped polycrystalline Si. The preparation of the layers is realized via ion implantation in Si wafers plus subsequent thermal annealing. Electrical-transport measurements in magnetic fields of up to 50 T show that the layers undergo two structural superconductor-insulator transitions upon variation of the annealing parameters. Structural analyzes based on TEM investigations reveal an underlying transformation of the size and distance of the clusters. This influences the interplay of the superconducting cluster coupling and capacitive charging energy as well as the extent of thermal and quantum fluctuations. In the superconducting regime (Tc ∼ 7 K) a double-reentrant phenomenon is observed. Here, magnetic fields of several Tesla facilitate superconductivity in an anisotropic way. A qualitative explanation is given via a self-developed theoretical model based on phase-slip events for Josephson-junction arrays. With respect to applications regarding sensor technology and quantum logic circuits the layers are successfully micro- and nanostructured via photolithography and FIB. This allows for the first observation of the Little-Parks effect in a nanostructure of amorphous Ga.

  14. The Knight shift in liquid gallium confined within porous glasses and opals

    International Nuclear Information System (INIS)

    Charnaya, E V; Michel, D; Tien, C; Kumzerov, Yu A; Yaskov, D

    2003-01-01

    71 Ga nuclear magnetic resonance studies were carried out for liquid gallium embedded into porous glasses with different pore sizes and into artificial opals within the temperature range from about 320 K to complete confined gallium freezing. A general decrease in the Knight shift compared to the bulk melt depending on pore sizes was observed in contrast to theoretical predictions. Correlations between alterations in the Knight shift and pore sizes were established for particular pore geometry. It was also observed that confined geometry affects the temperature dependence of the Knight shift in liquid gallium

  15. Potentiometric end point detection in the EDTA titrimetric determination of gallium

    International Nuclear Information System (INIS)

    Gopinath, N.; Renuka, M.; Aggarwal, S.K.

    2001-01-01

    Gallium is titrated in presence of known amount of Fe (III) with EDTA in HNO 3 solution at pH 2 to 3. The end point is detected potentiometrically employing a bright platinum wire - saturated calomel (SCE) reference electrode system, the redox couple being Fe (III) / Fe (II). Since Fe (III) is also titrated by EDTA, it is, therefore, subtracted from titre value to get the EDTA equivalent to gallium only. Precision and accuracy 0.2 to 0.4% was obtained in the results of gallium in the range of 8 to 2 mg. (author)

  16. Clinical evaluation of gallium-67 scintigraphy in comparison with autopsy findings in the older ages

    International Nuclear Information System (INIS)

    Shimohara, Yasuaki; Tanno, Munehiko; Yamada, Hideo; Kimura, Yuji; Nishino, Hideo; Ide, Hiroshi; Kurihara, Norimitsu; Chiba, Kazuo.

    1987-01-01

    A correlative study of autopsy findings and retrospective review of gallium scintigrams were performed in 106 older ages cases. Of these cases studied, 57 % demonstrated positive gallium study in the present series. Histological correlation was undertaken in cases of lung cancer. Among them, squamous cell carcinoma showed the highest incidence of positive results (83 %), whereas adenocarcinoma was the lowest (35 %). There is no apparent correlation between subtypes of histological classification of adenocarcinoma and abnormal accumulation of gallium. However, abnormal accumulation of the nuclide seems to be rather related with interstitial reactions, namely fibrotic changes, lymphocyte infiltration and vascularization. (author)

  17. The Effect of Gallium Nitrate on Arresting Blood Flow from a Wound

    Directory of Open Access Journals (Sweden)

    Paul H. Goodley

    2011-01-01

    Full Text Available A novel application of gallium nitrate, hitherto unreported, in reducing bleeding time from an open wound is presented. Experiments performed using simple punctures in the forearm demonstrated a very substantial reduction in bleeding time when a solution of gallium nitrate was applied relative to a control. This outcome was shown to be unaffected by the anticoagulant properties of warfarin. The mechanism for such action of gallium nitrate is unknown and merits further investigation, as do the possibilities for such an application to improve both civilian and defense trauma treatment modalities.

  18. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hanearl [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Doyoung [School of Electrical and Electronic Engineering, Ulsan College, 57 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2014-04-01

    Highlights: • Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. • Effects of Ga doping using TMGa in Ga doped ZnO were investigated. • Degraded properties from excessive doping were analyzed using chemical bondings. - Abstract: The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O{sub 2} gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O{sub 2} ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O{sub 2} from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10{sup −3} Ω cm for undoped ZnO to 2.05 × 10{sup −3} Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

  19. Analysis of the X-ray spectra emitted by laser-produced plasma of highly ionized lanthanum and praseodymium in the 8. 4 to 12. 0 A wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Zigler, A [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Mandelbaum, P [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Schwob, J L [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Mitnik, D [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel)

    1994-06-01

    A detailed analysis of the X-ray spectra emitted by laser produced plasma of lanthanum (8.5-12.5 A) and praseodymium (8.4-11.3 A) is given, using ab-initio calculations with the HULLAC relativistic code. Resonance 3d-nf (n 4, 5, 6) and 3p-4s, 4d transitions of the La XXX and Pr XXXII Ni I-like ions and neighbouring ionization states (La XXVIII to La XXXVI, Pr XXX to Pr XXXVI) have been identified. (orig.).

  20. Synthesis, spectral characterization and in vitro antifungal activity of Lanthanum(III) and Praseodymium(III) complexes with Schiff bases derived from 5-substituted-4-amino-5-hydrazino-1,2,4-triazoles and isatin

    International Nuclear Information System (INIS)

    Singh, Shweta; Tripathi, Priti; Pandey, Om P.; Sengupta, Soumitra K.

    2013-01-01

    The new lanthanum(III) and praseodymium(III) complexes of the general formula (LnCl(L)(H 2 O) 2 ) (Ln = La III or Pr III ; H 2 L = Schiff bases derived from 3-substituted-4-amino-5-hydrazino-1,2,4-triazoles and isatin) have been prepared. The complexes have been characterized by elemental analyses, molecular weight by FAB-mass, thermogravimetry, electrical conductance, magnetic moment and spectral (electronic, infrared, far-infrared, 1 H NMR and 13 C NMR) data. The ligands and all prepared complexes were assayed for antifungal (Aspergillus niger and Helminthosporium oryzae) activities. The activities have been correlated with the structures of the complexes. (author)

  1. Electrochemical characterization of praseodymia doped zircon. Catalytic effect on the electrochemical reduction of molecular oxygen in polar organic solvents

    Energy Technology Data Exchange (ETDEWEB)

    Domenech, Antonio, E-mail: antonio.domenech@uv.es [Departament de Quimica Analitica, Universitat de Valencia, Dr. Moliner, 50, 46100 Burjassot, Valencia (Spain); Montoya, Noemi; Alarcon, Javier [Departament de Quimica Inorganica, Universitat de Valencia, Dr. Moliner, 50, 46100 Burjassot, Valencia (Spain)

    2011-08-01

    Highlights: > Electrochemical characterization of Pr centers in praseodymia-doped zircon. > Study of the catalytic effect on the reduction of peroxide radical anion in nonaqueous solvents. > Assessment of non-uniform distribution of Pr centers in the zircon grains. - Abstract: The voltammetry of microparticles and scanning electrochemical microscopy methodologies are applied to characterize praseodymium centers in praseodymia-doped zircon (Pr{sub x}Zr{sub (1-y)}Si{sub (1-z)}O{sub 4}; y + z = x; 0.02 < x < 0.10) specimens prepared via sol-gel synthetic routes. In contact with aqueous electrolytes, two overlapping Pr-centered cathodic processes, attributable to the Pr (IV) to Pr (III) reduction of Pr centers in different sites are obtained. In water-containing, air-saturated acetone and DMSO solutions as solvent, Pr{sub x}Zr{sub (1-y)}Si{sub (1-z)}O{sub 4} materials produce a significant catalytic effect on the electrochemical reduction of peroxide radical anion electrochemically generated. These electrochemical features denote that most of the Pr centers are originally in its 4+ oxidation state in the parent Pr{sub x}Zr{sub (1-y)}Si{sub (1-z)}O{sub 4} specimens. The variation of the catalytic performance of such specimens with potential scan rate, water concentration and Pr loading suggests that Pr is not uniformly distributed within the zircon grains, being concentrated in the outer region of such grains.

  2. Structure and oxygen storage capacity of Pr-doped Ce0.26Zr0.74O2 mixed oxides

    Institute of Scientific and Technical Information of China (English)

    RAN Rui; WENG Duan; WU Xiaodong; FAN Jun; WANG Lei; WU Xiaodi

    2011-01-01

    Binary Ce-Zr (CZ),Pr-Zr (PZ) and ternary Ce-Zr-Pr (CZP) mixed oxides were prepared by an ammonia-aided co-precipitation method,and were aged in a steam/air flow at 1050 ℃.X-my diffraction (XRD),Raman spectra,X-photon spectra (XPS) and CO temperature programmed reduction (TPR) were carried out to characterize the micro-structure and reducibility of catalysts.The oxygen storage capacity (OSC) was evaluated with CO serving as probe gas.The results showed that a pseudo cubic structure was formed for the Zr-rich ceria-zirconia mixed oxides with Pr doping.The insertion of Pr prevented the phase segregation of the mixed oxides during the hydrothermal ageing.The Pr doped samples showed better redox performances in comparison with CZ,and the sample doped with 5 wt.% Pr showed the most remarkably promoted dynamic oxygen storage capacity.This phenomenon was closely related to both the reducibility and oxygen mobility of the mixed oxides.The introduction of praseodymium into ceria-zirconia could accelerate the oxygen migration by increasing the amount of oxygen vacancies,although it was difficult for Pr3+ ions themselves to participate in the oxygen exchange process.

  3. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    International Nuclear Information System (INIS)

    Kim, Sukwon; Kim, Tae Geun

    2015-01-01

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga_2O_3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10"−"3 Ω-cm"2 with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga_2O_3 targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10"−"3 Ω-cm"2 contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  4. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sukwon; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2015-09-30

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10{sup −3} Ω-cm{sup 2} with a sheet resistance of 124 Ω/ϒ. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V. - Highlights: • Indium gallium tin oxide (IGTO) for near-ultraviolet light-emitting diode is proposed. • IGTO is fabricated by co-sputtering the ITO and Ga{sub 2}O{sub 3} targets and hydrogen annealing. • IGTO shows a 94% transmittance at 385 nm and a 9.4 × 10{sup −3} Ω-cm{sup 2} contact resistance. • Near-ultraviolet light-emitting diode with IGTO shows improved optical performance.

  5. Thermal, spectroscopic and laser properties of Nd3+ in gadolinium scandium gallium garnet crystal produced by optical floating zone method

    Science.gov (United States)

    Tian, Li; Wang, Shuxian; Wu, Kui; Wang, Baolin; Yu, Haohai; Zhang, Huaijin; Cai, Huaqiang; Huang, Hui

    2013-12-01

    A neodymium-doped gadolinium scandium gallium garnet (Nd:GSGG) single crystal with dimensions of Φ 5 × 20 mm2 has been grown by means of optical floating zone (OFZ). X-ray powder diffraction (XRPD) result shows that the as-grown Nd:GSGG crystal possesses a cubic structure with space group Ia3d and a cell parameter of a = 1.2561 nm. Effective elemental segregation coefficients of the Nd:GSGG as-grown crystal were calculated by using X-ray fluorescence (XRF). The thermal properties of the Nd:GSGG crystal were systematically studied by measuring the specific heat, thermal expansion and thermal diffusion coefficient, and the thermal conductivity of this crystal was calculated. The absorption and luminescence spectra of Nd:GSGG were measured at room temperature (RT). By using the Judd-Ofelt (J-O) theory, the theoretical radiative lifetime was calculated and compared with the experimental result. Continuous wave (CW) laser performance was achieved with the Nd:GSGG at the wavelength of 1062 nm when it was pumped by a laser diode (LD). A maximum output power of 0.792 W at 1062 nm was obtained with a slope efficiency of 11.89% under a pump power of 7.36 W, and an optical-optical conversion efficiency of 11.72%.

  6. Study of the structural role of gallium and aluminum in 45S5 bioactive glasses by molecular dynamics simulations.

    Science.gov (United States)

    Malavasi, Gianluca; Pedone, Alfonso; Menziani, Maria Cristina

    2013-04-18

    The structural properties of phosphosilicate glasses based on the 45S5 Bioglass doped with gallium and aluminum (46.2 SiO2·24.3Na2O·26.9CaO·2.6P2O5·1.0X2O3, X = Ga or Al) are investigated by means of classical molecular dynamics simulations. Structural features of the two compositions are compared with those of the original 45S5 Bioglass in order to relate them to the different known bioactivities of these materials. Differences in the coordination environments of Ga and Al, network connectivity, and ion aggregation reveal a microscopic model of these glasses which supports the interpretation of the experimental data and provides new insight into the different biological behaviors of Ga- and Al-containing phosphosilicate glasses. Although Ga is found predominantly in a 4-fold coordination environment, small amounts of 5- and 6-fold coordinated atoms have been detected depending on the interatomic potential model employed. This suggests its possible intermediate role in phosphosilicate glasses. On the contrary, Al plays a network former role and leads to glasses with a more polymerized structure. Interestingly, the results show an increased propensity for aggregation of the Ca(2+) and PO4(3-) ions in the Al-containing phosphosilicate glasses with respect to the Ga-containing ones. This leads to insoluble calcium-phosphate-rich regions not detected in the bioactive glasses.

  7. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  8. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  9. Gallium-67 detection of intramammary injection sites secondary to intravenous drug abuse

    International Nuclear Information System (INIS)

    Swayne, L.C.

    1989-01-01

    A case of gallium localization within the breast occurred secondary to intravenous drug abuse. In the appropriate clinical setting, prior self-administered injections should be considered as a cause of Ga-67 accumulation at unusual sites

  10. Does gallium uptake in the pulmonary hila predict involvement by non-Hodgkin's lymphoma?

    International Nuclear Information System (INIS)

    Champion, P.E.; Groshar, D.; Hooper, H.R.; Palmer, M.; Catz, Z.; Belch, A.; McEwan, A.

    1992-01-01

    67 Ga imaging of non-Hodgkin's lymphoma is useful for evaluating the presence of viable tumour in a residual mass after treatment. However, we have frequently seen gallium uptake in the pulmonary hila without other evidence of lymphoma. To study the significance of this finding, 79 patients with intermediate grade non-Hodgkin's lymphoma were reviewed. Thirty-seven (47%) had abnormal hilar gallium uptake. Twenty-three of these could be fully evaluated, and only five (22%) had hilar lymphoma. A pattern of bilateral, symmetric hilar uptake was seen in 19 patients, but only one had evidence of lymphoma. In 15 cases, this pattern was seen only on single photon emission computed tomography (SPECT). The aetiology of this uptake remains unknown. It is not treatment related, as 12 patients had hilar gallium uptake prior to chemotherapy. Unless confirmed by other methods, hilar gallium uptake should not be attributed to lymphoma, and should not influence patient management. (Author)

  11. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-01-01

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes

  12. Gallium Content in PuO2 Using Laser Induced Breakdown Spectroscopy (LIBS)

    International Nuclear Information System (INIS)

    Smith, C.A.; Martinez, M.A.; Veirs, D.K.

    1999-01-01

    Laser Induced Breakdown Spectroscopy (LIBS) has been applied to the semi-quantitative analysis of gallium in plutonium oxide at the Los Alamos Plutonium Facility. The oxide samples were generated by the Thermally Induced Gallium Removal (TIGR) process, a pretreatment step prior to MOX fuel processing. The TIGR process uses PuO 2 containing 1 wt% gallium (nominal) as feed material. Following the TIGR process, gallium content was analyzed by LIBS and also by conventional wet chemical analysis (ICP-MS). Although the data range was insufficient to obtain an adequate calibration, general agreement between the two techniques was good. LIBS was found to have a useful analytical range of 34-400 ppm for Ga in PuO 2

  13. Radiology of pulmonary disease. Chest radiography, computed tomography, and gallium scanning

    International Nuclear Information System (INIS)

    Golden, J.A.; Sollitto, R.A.

    1988-01-01

    A review of the radiologic manifestations of AIDS pulmonary diseases, with an emphasis on the utility of gallium scanning in the context of the normal or equivocal chest x-ray, is presented.99 references

  14. LETTER TO THE EDITOR: Fabrication and structure of an opal-gallium nitride nanocomposite

    Science.gov (United States)

    Davydov, V. Yu; Dunin-Borkovski, R. E.; Golubev, V. G.; Hutchison, J. L.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Sloan, J.; Sorokin, L. M.

    2001-02-01

    A three-dimensional gallium nitride lattice has been synthesized within the void sublattice of an artificial opal. The composite structure has been characterized using X-ray diffraction, Raman spectroscopy and transmission electron microscopy.

  15. Abnormal gallium scan patterns of the salivary gland in pulmonary sarcoidosis

    Energy Technology Data Exchange (ETDEWEB)

    Mishkin, F.S.; Tanaka, T.T.; Niden, A.H.

    1978-12-01

    The findings of gallium imaging suggest that parotid abnormalities in sarcoidosis are common. Correlation with lung and mediastinal uptake suggests that this represents an early disease state and that it responds to steroid administration. That the findings after therapy do not simply represent suppression of the uptake mechanism for gallium is supported by objective improvement in pulmonary function as well as symptomatic relief. Salivary gland accumulation of gallium citrate occurred in one third of our control group patients--in those who had collagen disease and presumably either were alcoholic or had infectious parotitis. This may also be seen in lymphoma and after radiation therapy. Although the combination of salivary gland, pulmonary, and hilar concentration of gallium is not specific, in the appropriate clinical setting the pattern may be helpful in suggesting the correct diagnosis.

  16. Abnormal gallium scan patterns of the salivary gland in pulmonary sarcoidosis

    International Nuclear Information System (INIS)

    Mishkin, F.S.; Tanaka, T.T.; Niden, A.H.

    1978-01-01

    The findings of gallium imaging suggest that parotid abnormalities in sarcoidosis are common. Correlation with lung and mediastinal uptake suggests that this represents an early disease state and that it responds to steroid administration. That the findings after therapy do not simply represent suppression of the uptake mechanism for gallium is supported by objective improvement in pulmonary function as well as symptomatic relief. Salivary gland accumulation of gallium citrate occurred in one third of our control group patients--in those who had collagen disease and presumably either were alcoholic or had infectious parotitis. This may also be seen in lymphoma and after radiation therapy. Although the combination of salivary gland, pulmonary, and hilar concentration of gallium is not specific, in the appropriate clinical setting the pattern may be helpful in suggesting the correct diagnosis

  17. Micro-Scale Gallium Nitride Pressure Sensors for Advanced Harsh Environment Space Technology

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this research is to study the high-temperature response of the 2-dimesional electron gas (2DEG) that occurs at the interface of aluminum gallium nitride...

  18. Importance of gallium-67 scintigraphy in primary cutaneous B-cell lymphoma: report of two cases

    International Nuclear Information System (INIS)

    Attab, Cyomara Sanches; Moriguchi, Sonia Marta; Rocha, Euclides Timoteo da

    2010-01-01

    The authors describe two cases of cutaneous B-cell lymphoma where correct staging, treatment and follow-up could be achieved through a combination of conventional imaging studies and gallium-67 scintigraphy. (author)

  19. Targeted Delivery of Glucan Particle Encapsulated Gallium Nanoparticles Inhibits HIV Growth in Human Macrophages

    Directory of Open Access Journals (Sweden)

    Ernesto R. Soto

    2016-01-01

    Full Text Available Glucan particles (GPs are hollow, porous 3–5 μm microspheres derived from the cell walls of Baker’s yeast (Saccharomyces cerevisiae. The 1,3-β-glucan outer shell provides for receptor-mediated uptake by phagocytic cells expressing β-glucan receptors. GPs have been used for macrophage-targeted delivery of a wide range of payloads (DNA, siRNA, protein, small molecules, and nanoparticles encapsulated inside the hollow GPs or bound to the surface of chemically derivatized GPs. Gallium nanoparticles have been proposed as an inhibitory agent against HIV infection. Here, macrophage targeting of gallium using GPs provides for more efficient delivery of gallium and inhibition of HIV infection in macrophages compared to free gallium nanoparticles.

  20. Radiation dose estimates for the fetus from intakes of gallium citrate by the mother

    International Nuclear Information System (INIS)

    Watson, E.E.

    1992-01-01

    Information about the distribution and retention of Ga 67 in the pregnant woman is limited and must be extrapolated from animal data. Studies have shown that gallium administered as citrate crosses the placenta into the fetus; however, the concentration in the placenta appears to be considerably greater than that in the fetus. Little is known about the retention of gallium in the fetus and placenta. In this paper, available data on the concentrations in the placenta and fetus are combined with data on the biokinetics of gallium in the woman to provide a model for dose calculation. The absorbed fractions calculated from the pregnant woman models developed by the Radiopharmaceutical Internal Dose Information Center will be used to provide dose estimates for the radioisotopes of gallium. (author)

  1. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  2. Feasibility of flooding the reactor cavity with liquid gallium coolant for IVR-ERVC strategy

    International Nuclear Information System (INIS)

    Park, Seong Dae; Bang, In Cheol

    2013-01-01

    Highlights: ► We investigate the feasibility of gallium liquid metal application for IVR-ERVC. ► We consider overall concerns to apply the liquid metal. ► Decay heat can be removed by flooding the reactor cavity with gallium liquid metal. -- Abstract: In this paper, a new approach replacing the ERVC coolant by a liquid metal instead of water is studied to avoid the heat removal limit of CHF during boiling of water. As the flooding material, gallium is used in terms of the melting and boiling points. Gallium has the enough low melting point of ∼29.7 °C to ensure to maintain liquid state within the containment building. A gallium storage tank for the new flooding system of the ERVC is located in higher position than one of the reactor cavity to make a passive system using the gravity for the event of a station blackout (SBO). While the decay heat from the reactor vessel is removed by gallium, the borated water which is coming out from the reactor system plays a role as the ultimate heat sink in this ERVC system. In the system, two configurations of gallium and borated water are devised depending on whether the direct contact between them occurs. In the first configuration, two fluids are separated by the block structure. The decay heat is transported from molten corium to gallium through the vessel wall. Then the heat is ultimately dissipated by boiling of water in the block structure surface facing the borated water. In the second configuration, the cavity is flooded with both borated water and gallium in the same reactor cavity space. As the result, two layers of the fluids are naturally formed by the density difference. Like the first configuration, finally the heat removal is achieved by boiling of water via gallium. The CFD analysis shows that the maximum temperature of gallium is much lower than its boiling point while the natural circulation is stably formed in two types of the configurations without any serious risk of thermal limit

  3. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  4. Synchrotron white beam topographic studies of gallium arsenide crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Graeff, W.

    1997-01-01

    A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

  5. Localized surface phonon polariton resonances in polar gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Kaijun, E-mail: kfeng@nd.edu; Islam, S. M.; Verma, Jai; Hoffman, Anthony J. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Streyer, William; Wasserman, Daniel [Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2015-08-24

    We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

  6. Microstructures of group III-nitrides after implantation with gallium

    International Nuclear Information System (INIS)

    Kench, P.J.

    2001-05-01

    High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

  7. 67Gallium citrate lung scans in interstitial lung disease

    International Nuclear Information System (INIS)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.

    1976-01-01

    Patients with diffuse interstitial lung disease often require a lung biopsy to determine the diagnosis and proper therapy. However, once the diagnosis is established, clinical evaluation of symptoms, chest roentgenogram and pulmonary function testing are the only noninvasive means currently available to assess activity of the disease process and response to the therapy. Although these measures appear adequate in the presence of acute active disease in which response to therapy results in readily demonstrable changes in the above parameters, they may be insensitive to subtle changes that can occur in minimally active disease with slowly progressive interstitial pulmonary fibrosis over a period of years. A more sensitive noninvasive technique for identifying these cases with a smoldering diffuse interstitial inflammatory process might greatly improve our ability to effectively manage such patients. With this in mind, the value of gallium lung scan was investigated to assess its ability to predict inflammatory activity in such a clinical setting

  8. /sup 67/Gallium citrate lung scans in interstitial lung disease

    Energy Technology Data Exchange (ETDEWEB)

    Niden, A.H.; Mishkin, F.S.; Khurana, M.M.L.

    1976-02-01

    Patients with diffuse interstitial lung disease often require a lung biopsy to determine the diagnosis and proper therapy. However, once the diagnosis is established, clinical evaluation of symptoms, chest roentgenogram and pulmonary function testing are the only noninvasive means currently available to assess activity of the disease process and response to the therapy. Although these measures appear adequate in the presence of acute active disease in which response to therapy results in readily demonstrable changes in the above parameters, they may be insensitive to subtle changes that can occur in minimally active disease with slowly progressive interstitial pulmonary fibrosis over a period of years. A more sensitive noninvasive technique for identifying these cases with a smoldering diffuse interstitial inflammatory process might greatly improve our ability to effectively manage such patients. With this in mind, the value of gallium lung scan was investigated to assess its ability to predict inflammatory activity in such a clinical setting.

  9. Development of microwave amplifier based on gallium nitride semiconductor structures

    International Nuclear Information System (INIS)

    Pavlov, D.Yi.; Prokopenko, O.V.; Tsvyirko, Yu.A.; Pavlov, Yi.L.

    2014-01-01

    Microwave properties of microwave amplifier based on gallium nitride (GN) semiconductor structures has been calculated numerically. We proposed the method of numerical calculation of device. This method is accurately sets the value of its characteristics depending on the elements that are used in design of amplifier. It is shown that the device based on GN HEMT-transistors could have amplification factor about 50 dB, while its sizes are 27x18x5.5 mm 3 . Also was provided the absolute stability an amplifier in the whole operating frequency range. It is quite important when using this type of amplifiers in different conditions of exploitation and various fields of use the radioelectronic equipment

  10. Amorphous gallium oxide grown by low-temperature PECVD

    KAUST Repository

    Kobayashi, Eiji

    2018-03-02

    Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

  11. Phosphorus Dimerization in Gallium Phosphide at High Pressure

    Energy Technology Data Exchange (ETDEWEB)

    Lavina, Barbara [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Kim, Eunja [Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Cynn, Hyunchae [Lawrence Livermore National Laboratory, Livermore, California 94550, United States; Weck, Philippe F. [Sandia National Laboratories, Albuquerque, New Mexico 87185, United States; Seaborg, Kelly [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Siska, Emily [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Meng, Yue [HPCAT, Carnegie Institution of Washington, Argonne, Illinois 60439, United States; Evans, William [Lawrence Livermore National Laboratory, Livermore, California 94550, United States

    2018-02-09

    Using combined experimental and computational approaches, we show that at 43 GPa and 1300 K gallium phosphide adopts the super-Cmcm structure, here indicated with its Pearson notation oS24. First-principles enthalpy calculations demonstrate that this structure is more thermodynamically stable above ~20 GPa than previously proposed polymorphs. Here, in contrast to other polymorphs, the oS24 phase shows a strong bonding differentiation and distorted fivefold coordination geometries of both P atoms. The shortest bond of the phase is a single covalent P–P bond measuring 2.171(11) Å at synthesis pressure. Phosphorus dimerization in GaP sheds light on the nature of the super-Cmcm phase and provides critical new insights into the high-pressure polymorphism of octet semiconductors. Bond directionality and anisotropy explain the relatively low symmetry of this high-pressure phase.

  12. Recognition of distinctive patterns of gallium-67 distribution in sarcoidosis

    International Nuclear Information System (INIS)

    Sulavik, S.B.; Spencer, R.P.; Weed, D.A.; Shapiro, H.R.; Shiue, S.T.; Castriotta, R.J.

    1990-01-01

    Assessment of gallium-67 ( 67 Ga) uptake in the salivary and lacrimal glands and intrathoracic lymph nodes was made in 605 consecutive patients including 65 with sarcoidosis. A distinctive intrathoracic lymph node 67 Ga uptake pattern, resembling the Greek letter lambda, was observed only in sarcoidosis (72%). Symmetrical lacrimal gland and parotid gland 67 Ga uptake (panda appearance) was noted in 79% of sarcoidosis patients. A simultaneous lambda and panda pattern (62%) or a panda appearance with radiographic bilateral, symmetrical, hilar lymphadenopathy (6%) was present only in sarcoidosis patients. The presence of either of these patterns was particularly prevalent in roentgen Stages I (80%) or II (74%). We conclude that simultaneous (a) lambda and panda images, or (b) a panda image with bilateral symmetrical hilar lymphadenopathy on chest X-ray represent distinctive patterns which are highly specific for sarcoidosis, and may obviate the need for invasive diagnostic procedures

  13. Heterotopic ossification (myositis ossificans) in acquired immune deficiency syndrome. Detection by gallium scintigraphy

    International Nuclear Information System (INIS)

    Drane, W.E.; Tipler, B.M.

    1987-01-01

    A case of heterotopic ossification (myositis ossificans) secondary to the central nervous system complications of acquired immune deficiency syndrome (AIDS) is reported. Because of the overwhelming suspicion of infection in this patient, this diagnosis was not considered until a gallium scan revealed the typical findings of heterotopic ossification. Because of the increasing utilization of gallium imaging in the AIDS population, every imaging specialist should be aware of this potential disorder

  14. Are oral cathartics of value in optimizing the gallium scan. Concise communication

    International Nuclear Information System (INIS)

    Silberstein, E.B.; Fernandez-Ulloa, M.; Hall, J.

    1981-01-01

    The normal intestinal secretion of 9-15% of an administered dose of gallium-67 may prevent early detection of intra-abdominal disease. We randomized 50 patients to receive either no bowel preparation or 30 cc of milk of magnesia plus 5 cc of cascara. No significant difference was found between the two groups in frequency with which gallium interfered with readings or time to complete the study

  15. Are oral cathartics of value in optimizing the gallium scan? Concise communication.

    Science.gov (United States)

    Silberstein, E B; Fernandez-Ulloa, M; Hall, J

    1981-05-01

    The normal intestinal secretion of 9-15% of an administered dose of gallium-67 may prevent early detection of intra-abdominal disease. We randomized 50 patients to receive either no bowel preparation or 30 cc of milk of magnesia plus 5 cc of cascara. No significant difference was found between the two groups in frequency with which gallium interfered with readings or time to complete the study.

  16. Semi-quantitative evaluation of gallium-67 scintigraphy in lupus nephritis

    International Nuclear Information System (INIS)

    Lin Wanyu; Hsieh Jihfang; Tsai Shihchuan; Lan Joungliang; Cheng Kaiyuan; Wang Shyhjen

    2000-01-01

    Within nuclear medicine there is a trend towards quantitative analysis. Gallium renal scan has been reported to be useful in monitoring the disease activity of lupus nephritis. However, only visual interpretation using a four-grade scale has been performed in previous studies, and this method is not sensitive enough for follow-up. In this study, we developed a semi-quantitative method for gallium renal scintigraphy to find a potential parameter for the evaluation of lupus nephritis. Forty-eight patients with lupus nephritis underwent renal biopsy to determine World Health Organization classification, activity index (AI) and chronicity index (CI). A delayed 48-h gallium scan was also performed and interpreted by visual and semi-quantitative methods. For semi-quantitative analysis of the gallium uptake in both kidneys, regions of interest (ROIs) were drawn over both kidneys, the right forearm and the adjacent spine. The uptake ratios between these ROIs were calculated and expressed as the ''kidney/spine ratio (K/S ratio)'' or the ''kidney/arm ratio (K/A ratio)''. Spearman's rank correlation test and Mann-Whitney U test were used for statistical analysis. Our data showed a good correlation between the semi-quantitative gallium scan and the results of visual interpretation. K/S ratios showed a better correlation with AI than did K/A ratios. Furthermore, the left K/S ratio displayed a better correlation with AI than did the right K/S ratio. In contrast, CI did not correlate well with the results of semi-quantitative gallium scan. In conclusion, semi-quantitative gallium renal scan is easy to perform and shows a good correlation with the results of visual interpretation and renal biopsy. The left K/S ratio from semi-quantitative renal gallium scintigraphy displays the best correlation with AI and is a useful parameter in evaluating the disease activity in lupus nephritis. (orig.)

  17. Myocardial scintigraphy with gallium-67 in the detection of cardiac acute rejection

    International Nuclear Information System (INIS)

    Meneguetti, J.C.

    1990-01-01

    In order to evaluate the myocardial scintigraphy with Gallium-67 potentiality in the detection of acute rejection phenomenon, 105 studies were performed in 20 patients after they had a heart transplantation. The scintigraphic images were obtained by a conventional camera-computer system. These images were acquired 48 hours after all the patients were given an intravenous injection of 111 MBq of Gallium-67 Citrate. The biopsies were done according to the Mason technique and the histological analysis followed the Billingham standards. (author)

  18. Study of Magnetohydrodynamic Surface Waves on Liquid Gallium

    Energy Technology Data Exchange (ETDEWEB)

    Hantao Ji; William Fox; David Pace; H.L. Rappaport

    2004-05-13

    Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

  19. Study of Magnetohydrodynamic Surface Waves on Liquid Gallium

    International Nuclear Information System (INIS)

    Hantao Ji; William Fox; David Pace; Rappaport, H.L.

    2004-01-01

    Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed

  20. Gallium nitride-based micro-opto-electro-mechanical systems

    Science.gov (United States)

    Stonas, Andreas Robert

    Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

  1. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    Energy Technology Data Exchange (ETDEWEB)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Å, b=6.0374(2) Å, c=10.2874(3) Å, and β=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (λ{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  2. On the nature of gallium species in gallium-modified mordenite and MFI zeolites. A comparative DRIFT study of carbon monoxide adsorption and hydrogen dissociation.

    Science.gov (United States)

    Serykh, Alexander I; Kolesnikov, Stanislav P

    2011-04-21

    The results of a DRIFT study of carbon monoxide molecular adsorption and hydrogen dissociative adsorption on gallium-modified mordenite and MFI (ZSM-5) zeolites are presented. It was found that in the reduced gallium-modified mordenite (Ga-MOR) both Ga(3+) and Ga(+) exchanged cations are present and can be detected by CO adsorption. Ga(3+) cations in Ga-MOR dissociatively adsorb molecular hydrogen at elevated temperatures, resulting in the formation of gallium hydride species and acidic hydroxyl groups. In the reduced Ga-MFI evacuated at 823 K under medium vacuum conditions only Ga(+) exchanged intrazeolite cations were detected. It was found, however, that Ga(3+) intrazeolite exchanged cations which form upon high-temperature disproportionation of Ga(+) cations in the reduced Ga-MFI and Ga-MOR can be stabilized by high-temperature oxidation of these zeolites.

  3. High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites

    Energy Technology Data Exchange (ETDEWEB)

    K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

    2011-12-31

    The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

  4. Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

    Directory of Open Access Journals (Sweden)

    Deming Ma

    2015-01-01

    Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

  5. Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

    KAUST Repository

    Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S.

    2016-01-01

    Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

  6. Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths

    KAUST Repository

    Awan, Kashif M.

    2016-08-11

    Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.

  7. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

    Science.gov (United States)

    2016-12-01

    ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

  8. Transport and structural characterization of solution-processable doped ZnO nanowires

    KAUST Repository

    Noriega, Rodrigo

    2009-08-18

    The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.

  9. Spectral studies of lanthanide-nucleic acid component interaction: complexes of adenine, adenosine, adenosine 5'-mono-, adenosine 5'-di- and adenosine 5' tri-phosphates with praseodymium(III)

    International Nuclear Information System (INIS)

    Joseph, George; Anjaiah, K.; Misra, S.N.

    1990-01-01

    The interactions of adenine, adenosine, adenosine 5'-mono-, adenosine 5'-di-and adenosine 5'-tri-phosphates with praseodymium(III) have been studied in different stoichiometries and at varying hydrogen ion concentrations by absorption spectral studies. The sharp bands in the spectra have been individually analysed by Gaussian curve analysis, and various spectral parameters have been computed using partial and multiple regression methods on an HP-1000/45 computer. The changes in and the magnitudes of these parameters have been correlated with the degrees of outer- and inner-sphere coordination around praseodymium(III). Crystalline complexes of the type: Pr(nucleotide) 2 (H 2 O) 2 (where nucleotide = AMP, ADP and ATP) have been characterized on the basis of analytical, IR and 1 H NMR spectral data. These studies indicate that the binding of the nucleotide is through phosphoric oxygen. These complexes in aqueous medium show significant ionization which supports the observed weak 4f-4f bands, lower values of nephelauxetic effect and the parameters derived from coulombic and spin-orbit interactions. (author). 3 t abs., 28 refs

  10. Optical characterization of Pr3+-doped yttria-stabilized zirconia single crystals

    International Nuclear Information System (INIS)

    Savoini, B.; Munoz Santiuste, J.E.; Gonzalez, R.

    1997-01-01

    The optical absorption and fluorescence of Pr 3+ ions in yttria-stabilized zirconia single crystals are investigated. Fluorescence emissions from the 1 D 2 level are clearly dominant and low intensity emission lines from the 3 P 0 and 1 G 4 states are also observed. Analysis with the Judd-Ofelt theory of the absorption intensities has been made assuming that only ∼40% of the praseodymium ions contribute to the optical absorption bands. Quantum efficiency values of η( 3 P 0 )∼0.2 and η( 1 D 2 )∼ 1 are obtained at room temperature. 1 D 2 fluorescence quenching has been observed in heavily-doped samples due to cross relaxation processes among neighboring Pr 3+ ions. Analysis using the Inokuti-Hirayama model shows that electric dipole-dipole interactions are mainly responsible for the quenching effect. Pr 3+ ions are present in seven and sixfold configurations with a statistical distribution. The energy position of the 4f5d configuration is very different for each center. The fluorescence dynamics is explained by a mechanism involving thermally assisted population of the 3 P 1,2 + 1 I 6 upper levels and fast relaxation to the 1 D 2 level via states of the excited 4f5d configuration. copyright 1997 The American Physical Society

  11. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  12. Measurement of solar proton-proton fusion neutrinos with a Soviet-American gallium experiment: Technical progress report

    International Nuclear Information System (INIS)

    Cherry, M.L.

    1989-06-01

    A gallium solar neutrino detector is sensitive to low-energy proton-proton fusion neutrinos. A flux of 70 SNU is expected in a gallium detector from the p-p reaction independent of solar model calculations. If, however, neutrino oscillations in the solar interior are responsible for the suppressed 8 B flux measured by the Homestake 37 Cl experiment, then a comparison of the gallium and chlorine results may make possible a determination of the neutrino mass difference and mixing angle. A 60-ton gallium detector is currently being constructed in the Baksan Laboratory in the Soviet Union, and should be taking data by the end of 1989

  13. Distribution of trace levels of therapeutic gallium in bone as mapped by synchrotron X-ray microscopy

    International Nuclear Information System (INIS)

    Bockman, R.S.; Repo, M.A.; Warrell, R.P. Jr.; Pounds, J.G.; Schidlovsky, G.; Gordon, B.M.; Jones, K.W.

    1990-01-01

    Gallium nitrate, a drug that inhibits calcium release from bone, has been proven a safe and effective treatment for the accelerated bone resorption associated with cancer. Though bone is a target organ for gallium, the kinetics, sites, and effects of gallium accumulation in bone are not known. The authors have used synchrotron X-ray microscopy to map the distribution of trace levels of gallium in bone. After short-term in vivo administration of gallium nitrate to rats, trace (nanogram) amounts of gallium preferentially localized to the metabolically active regions in the metaphysis as well as the endosteal and periosteal surfaces of diaphyseal bone, regions where new bone formation and modeling were occurring. The amounts measured were well below the levels known to be cytotoxic. Iron and zinc, trace elements normally found in bone, were decreased in amount after in vivo administration of gallium. These studies represent a first step toward understanding the mechanism(s) of action of gallium in bone by suggesting the possible cellular, structural, and elemental targets of gallium

  14. Radiochemical neutron activation analysis based multi-elemental analysis of high purity gallium

    International Nuclear Information System (INIS)

    Tashimova, F.A.; Sadikov, I.I; Salimov, M.I.; Zinov'ev, V.G.

    2006-01-01

    Full text: Gallium is one of the widely used materials in semiconductor and optoelectronics industry. Gallium is used to produce infrared detectors, piezoelectric sensors, high- and low-temperature transistors for space and defense technology. One of the most important requirements for semiconductor materials of gallium compounds is an excessive high purity for layers and films. Information on impurities (type of an impurity, concentration, character of distribution) is important as for better understanding of the physical and chemical processes taking place in formed semiconductor structures and for the 'know-how' of devices on their basis. The object of this work is to develop radiochemical neutron activation technique for analysis of high purity gallium. Irradiation of 0.1 g of gallium sample in neutron flux of 5·10 13 cm -2 s -1 for 5 hours will result in induced activity of more than 10 8 Bq, due to 72 Ga radionuclide, half-life of which is 14.1 hours. Therefore to perform instrumental NAA of gallium long period (10 day) cooling is required, and high sensitive determination of elements producing short- and long-lived radionuclides (T 1/2 72 Ga. We have studied the behavior of gallium in extraction-chromatographic system 'TBP-HCl'. The experiments have shown that higher factor of distribution (D) and capacity on gallium can be achieved when 'TBP-4M HCl' system is used. However more than 10 trace elements have high D and thus they cannot be separated from 72 Ga. To resolve the problem and increase the number of separated trace elements we have used preliminary satisfaction of chromatographic column with tellurium, which has D higher than the most of elements in 'TBP-4M HCl' system and thus suppresses extraction of elements. Distribution profile of gallium along the column and elution curve of 25 trace elements have been measured. Chemical yields of separated elements measured by using radiotracers are more than 93%. On the basis of the carried out researches

  15. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  16. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  17. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  18. The nature of dielectric state and self compensation mechanisms in PbTe doped with Ga

    International Nuclear Information System (INIS)

    Petrenko, T L; Bryksa, V P

    2014-01-01

    The long-standing problem of impurity states in narrow-gap PbTe crystals doped with group-III element Ga was analized by means of density functional theory. We focus on the mechanisms of the self-compensation during growth as well as during post-growth annealing to clarify the mechanism of dielectric state formation necessary for the device fabrication. The unique feature of the presented work is consideration of the simplest impurity complex (2Ga) Pb as well as of a lead vacancy V Pb , gallium substituting for Pb site Ga Pb and interstitial gallium Ga int in various charge states. Calculations show that complex (2Ga) Pb has the lowest formation energy among other gallium-related defects and is a double donor. Ga int is a single donor while Ga Pb is amphoteric impurity which act as a donor or acceptor depending on the Fermi level position. Moreover, we conclude that neutral impurity Ga Pb 0 is metastable due to the self-compensation and formation of (2Ga) Pb complex with simultaneous creation of V Pb . Calculated binding energy of this complex suggests that it is stable for the actual temperatures and concentrations. In addition the (2Ga) Pb defect is responsible for spontaneous creation of lead vacancy which prevents an increasing of the carrier concentration. Therefore, the considered complex determines the most striking features of PbTe crystals doped with Ga, namely DX-like properties and dielectric state formation. This defect plays a crucial role in real crystals and clarifies the nature of properties important for device fabrication. (papers)

  19. Ab initio investigation of Al- and Ga-doped single-walled boron nitride nanotubes as ammonia sensor

    International Nuclear Information System (INIS)

    Soltani, Alireza; Raz, Shima Ghafouri; Rezaei, Vahid Joveini; Dehno Khalaji, Aliakbar; Savar, Mohammad

    2012-01-01

    Highlights: ► The electronic properties of NH 3 on Al- and Ga-doped (8, 0) and (5, 5) BNNT are studied. ► The adsorption energy for NH 3 on Al-doped (8, 0) BNNT is higher than that of Ga-doped (8, 0) BNNT. ► The relation between adsorption energy and charge transfer was investigated. - Abstract: We performed first-principles calculations on the ammonia (NH 3 ) adsorption properties with zigzag and armchair single-walled BN nanotubes (SWBNNTs) using B3LYP/6-31G* basis set implemented in Gaussian 98 program. We considered the ammonia adsorption on structural and electronic properties of Al- and Ga-doped (8, 0), (5, 5) BNNTs. The adsorption energy for the most stable configuration of NH 3 on Al-doped (8, 0) BNNT is about −0.182 eV, which is typical for the chemisorptions. We determined that both aluminum and gallium doping can significantly enhance the adsorption energy of NH 3 /BNNTs complexes. Our electronic results reveal that there is a significant orbital hybridization between two species in adsorption process being an evidence of covalent interaction.

  20. Health-enhancing doping controls

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    2010-01-01

    Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...