Multilevel tracking power supply for switch-mode audio power amplifiers

DEFF Research Database (Denmark)

Iversen, Niels Elkjær; Lazarevic, Vladan; Vasic, Miroslav

2018-01-01

to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured results show that systems employing envelope tracking can improve system efficiency from 2% to 12%, i.e. a factor of 6. The temperature rise is strongly reduced, especially for the switching power MOSFETs where......Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques...

A Coupled Field Multiphysics Modeling Approach to Investigate RF MEMS Switch Failure Modes under Various Operational Conditions

Directory of Open Access Journals (Sweden)

Khaled Sadek

2009-10-01

Full Text Available In this paper, the reliability of capacitive shunt RF MEMS switches have been investigated using three dimensional (3D coupled multiphysics finite element (FE analysis. The coupled field analysis involved three consecutive multiphysics interactions. The first interaction is characterized as a two-way sequential electromagnetic (EM-thermal field coupling. The second interaction represented a one-way sequential thermal-structural field coupling. The third interaction portrayed a two-way sequential structural-electrostatic field coupling. An automated substructuring algorithm was utilized to reduce the computational cost of the complicated coupled multiphysics FE analysis. The results of the substructured FE model with coupled field analysis is shown to be in good agreement with the outcome of previously published experimental and numerical studies. The current numerical results indicate that the pull-in voltage and the buckling temperature of the RF switch are functions of the microfabrication residual stress state, the switch operational frequency and the surrounding packaging temperature. Furthermore, the current results point out that by introducing proper mechanical approaches such as corrugated switches and through-holes in the switch membrane, it is possible to achieve reliable pull-in voltages, at various operating temperatures. The performed analysis also shows that by controlling the mean and gradient residual stresses, generated during microfabrication, in conjunction with the proposed mechanical approaches, the power handling capability of RF MEMS switches can be increased, at a wide range of operational frequencies. These design features of RF MEMS switches are of particular importance in applications where a high RF power (frequencies above 10 GHz and large temperature variations are expected, such as in satellites and airplane condition monitoring.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Role of advanced RF/microwave technology and high power switch technology for developing/upgrading compact/existing accelerators

International Nuclear Information System (INIS)

Shrivastava, Purushottam

2001-01-01

With the advances in high power microwave devices as well as in microwave technologies it has become possible to go on higher frequencies at higher powers as well as to go for newer devices which are more efficient and compact and hence reducing the power needs as well as space and weight requirement for accelerators. New devices are now available in higher frequency spectrum for example at C-Band, X-band and even higher. Also new devices like klystrodes/Higher Order Mode Inductive Output Tubes (HOM IOTs) are now becoming competitors for existing tubes which are in use at present accelerator complexes. The design/planning of the accelerators used for particle physics research, medical accelerators, industrial irradiation, or even upcoming Driver Accelerators for Sub Critical Reactors for nuclear power generation are being done taking into account the newer technologies. The accelerators which use magnetrons, klystrons and similar devices at S-Band can be modified/redesigned with devices at higher frequencies like X-Band. Pulsed accelerators need high power high voltage pulsed modulators whereas CW accelerators need high voltage power supplies for functioning of RF / Microwave tubes. There had been a remarkable growth in the development and availability of solid state switches both for switching the pulsed modulators for microwave tubes as well as for making high frequency switch mode power supplies. Present paper discusses some of the advanced devices/technologies in this field as well as their capability to make advanced/compact/reliable accelerators. Microwave systems developed/under development at Centre for Advanced Technology are also discussed briefly along with some of the efforts done to make them compact. An overview of state of art vacuum tube devices and solid state switch technologies is given. (author)

High Peak Power Test and Evaluation of S-band Waveguide Switches

Science.gov (United States)

Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

1997-05-01

The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

Directory of Open Access Journals (Sweden)

Amna Riaz

2018-01-01

Full Text Available Microelectromechanical Systems (MEMS are devices made up of several electrical and mechanical components. They consist of mechanical functions (sensing, thermal, inertial and electrical functions (switching, decision making on a single chip made by microfabrication methods. These chips exhibit combined properties of the two functions. The size of system has characteristic dimensions less than 1mm but more than 1μm. The configuration of these components determine the final deliverables of the switch. MEMS can be designed to meet user requirements on any level from microbiological application such as biomedical transducers or tissue engineering, to mechanical systems such as microfluidic diagnoses or chemical fuel cells. The low cost, small mass and minimal power consumption of the MEMS makes it possible to readily integrate to any kind of system in any environment. MEMS are faster, better and cheaper. They offer excellent electrical performances. MEMS working at Radio frequencies are RF MEMS. RF-MEMS switches find huge market in the modern telecommunication networks, biological, automobiles, satellites and defense systems because of their lower power consumptions at relatively higher frequencies and better electrical performances. But the reliability is the major hurdle in the fate of RF MEMS switches. Reliability mainly arises due to the presence of residual stresses, charging current, fatigue and creep and contact degradation. The presence of residual stresses in switches the S-Parameters of the switches are affected badly and the residual stress affects the final planarity of the fabricated structure. Design and simulation of an RF-MEMS switch is proposed considering the residual stresses in both on and off state. The operating frequency band is being optimized and the best possible feasible fabrication technique for the proposed switch design is being analyzed. S-Parameters are calculated and a comparison for the switches with stress and

Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

Science.gov (United States)

Quaranta, Fabio; Persano, Anna; Capoccia, Giovanni; Taurino, Antonietta; Cola, Adriano; Siciliano, Pietro; Lucibello, Andrea; Marcelli, Romolo; Proietti, Emanuela; Bagolini, Alvise; Margesin, Benno; Bellutti, Pierluigi; Iannacci, Jacopo

2015-05-01

Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

Quasi-Optical Network Analyzers and High-Reliability RF MEMS Switched Capacitors

Science.gov (United States)

Grichener, Alexander

The thesis first presents a 2-port quasi-optical scalar network analyzer consisting of a transmitter and receiver both built in planar technology. The network analyzer is based on a Schottky-diode mixer integrated inside a planar antenna and fed differentially by a CPW transmission line. The antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The LO signal is swept from 3-5 GHz and high-order harmonic mixing in both up- and down- conversion mode is used to realize the 15-50 GHz RF bandwidth. The network analyzer resulted in a dynamic range of greater than 40 dB and was successfully used to measure a frequency selective surface with a second-order bandpass response. Furthermore, the system was built with circuits and components for easy scaling to millimeter-wave frequencies which is the primary motivation for this work. The application areas for a millimeter and submillimeter-wave network analyzer include material characterization and art diagnostics. The second project presents several RF MEMS switched capacitors designed for high-reliability operation and suitable for tunable filters and reconfigurable networks. The first switched-capacitor resulted in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam resulted in Q greater than 100 at C to X-band frequencies, and power handling of 0.6-1.1 W. The design also minimized charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high power (1 W) conditions. The second switched-capacitor was designed without any dielectric to minimize charging. The device was hot-switched at 1 W of RF power for greater than 11 billion cycles with virtually no change in the C-V curve. The final project presents a 7-channel

Rf power sources

International Nuclear Information System (INIS)

Allen, M.A.

1988-01-01

In this paper, the author reports on RF power sources for accelerator applications. The approach will be with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. The author pays close attention to electron- positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. Circular machines, cyclotrons, synchrotrons, etc. have usually not been limited by the RF power available and the machine builders have usually had their RF power source requirements met off the shelf. The main challenge for the RF scientist has been then in the areas of controls. An interesting example of this is in the Conceptual Design Report of the Superconducting Super Collider (SSC) where the RF system is described in six pages of text in a 700-page report. Also, the cost of that RF system is about one-third of a percent of the project's total cost. The RF system is well within the state of the art and no new power sources need to be developed. All the intellectual effort of the system designer would be devoted to the feedback systems necessary to stabilize beams during storage and acceleration, with the main engineering challenges (and costs) being in the superconducting magnet lattice

Design, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches

Directory of Open Access Journals (Sweden)

Zhongliang Deng

2016-08-01

Full Text Available This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0° at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

NARCIS (Netherlands)

Tilmans, H.A.C.; Ziad, H.; Jansen, Henricus V.; Di Monaco, O.; Jourdain, A.; De Raedt, W.; Rottenberg, X.; De Backer, E.; Decoussernaeker, A.; Baert, K.

2001-01-01

Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as

Performance analysis of switching based hybrid FSO/RF transmission

KAUST Repository

Usman, Muneer; Yang, Hongchuan; Alouini, Mohamed-Slim

2014-01-01

Hybrid free space optical (FSO)/ radio frequency (RF) systems have emerged as a promising solution for high data rate wireless back haul.We present and analyze a switching based transmission scheme for hybrid FSO/RF system. Specifically, either FSO or RF link will be active at a certain time instance, with FSO link enjoying a higher priority. Analytical expressions have been obtained for the outage probability, average bit error rate and ergodic capacity for the resulting system. Numerical examples are presented to compare the performance of the hybrid scheme with FSO only scenario.

Performance analysis of switching based hybrid FSO/RF transmission

KAUST Repository

Usman, Muneer

2014-09-01

Hybrid free space optical (FSO)/ radio frequency (RF) systems have emerged as a promising solution for high data rate wireless back haul.We present and analyze a switching based transmission scheme for hybrid FSO/RF system. Specifically, either FSO or RF link will be active at a certain time instance, with FSO link enjoying a higher priority. Analytical expressions have been obtained for the outage probability, average bit error rate and ergodic capacity for the resulting system. Numerical examples are presented to compare the performance of the hybrid scheme with FSO only scenario.

RF MEMS

Indian Academy of Sciences (India)

At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

International Nuclear Information System (INIS)

Hirshfield, Jay L.

2010-01-01

Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 5-9 MW level of incident power. The compressed pulses observed had powers of 50-70 MW and durations of 40-70 ns. Peak power gains were measured to be in the range of 7:1-11:1 with efficiency in the range of 50-63%.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Directory of Open Access Journals (Sweden)

Tejinder Singh

2014-01-01

Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2005-01-01

This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

Solid-state high voltage modulator and its application to rf source high voltage power supplies

International Nuclear Information System (INIS)

Tooker, J.F.; Huynh, P.; Street, R.W.

2009-01-01

A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

Ferroelectric switch for a high-power Ka-band active pulse compressor

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2013-12-18

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

RF assisted switching in magnetic Josephson junctions

Science.gov (United States)

Caruso, R.; Massarotti, D.; Bolginov, V. V.; Ben Hamida, A.; Karelina, L. N.; Miano, A.; Vernik, I. V.; Tafuri, F.; Ryazanov, V. V.; Mukhanov, O. A.; Pepe, G. P.

2018-04-01

We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical "0" and "1." The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications.

Some studies on the deformation of the membrane in an RF MEMS switch

NARCIS (Netherlands)

Ambati, Vijaya Raghav; Asheim, Andreas; van den Berg, Jan Bouwe; van Gennip, Yves; Gerasimov, Tymofiy; Hlod, Andriy; Planqué, Bob; van der Schans, Martin; van der Stelt, Sjors; Vargas Rivera, Michelangelo; Vondenhoff, Erwin; Bokhove, Onno; Hurink, Johann; Meinsma, Gjerrit; Stolk, Chris; Vellekoop, Michel

2008-01-01

Radio Frequency (RF) switches of Micro Electro Mechanical Systems (MEMS) are appealing to the mobile industry because of their energy efficiency and ability to accommodate more frequency bands. However, the electromechanical coupling of the electrical circuit to the mechanical components in RF MEMS

Self-Oscillating Soft Switching Envelope Tracking Power Supply for Tetra2 Base Station

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2007-01-01

This paper presents a high-efficiency, high-bandwidth solution to implementing an envelope tracking power supply for the RF power amplifier (RFPA) in a Tetra2 base station. The solution is based on synchronous rectified buck topology, augmented with high-side switch zero-current switching (ZCS......) implemented with a series inductor and an external clamping power supply. Combined with advanced power stage components (die-size MOSFETs), a high-performance fixed-frequency self-oscillating (sliding mode) control strategy and a 4th-order output filter, this leads to a compact, effective and efficient...... overall solution switching at 1MHz with 88-95% efficiency. In a class-AB RFPA amplifying a 50kHz bandwidth QAM Tetra2 signal at 4.6W average output power, the use of tracking supply voltage reduced power dissipation by 25W....

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

International Nuclear Information System (INIS)

Guo, Xin; Gong, Zhuhao; Zhong, Qi; Liang, Xiaotong; Liu, Zewen

2016-01-01

Reconfigurable attenuators are widely used in microwave measurement instruments. Development of miniaturized attenuation devices with high precision and broadband performance is required for state-of-the-art applications. In this paper, a compact 3-bit microwave attenuator based on radio frequency micro-electro-mechanical system (RF MEMS) switches and polysilicon attenuation modules is presented. The device comprises 12 ohmic contact MEMS switches, π -type polysilicon resistive attenuation modules and microwave compensate structures. Special attention was paid to the design of the resistive network, compensate structures and system simulation. The device was fabricated using micromachining processes compatible with traditional integrated circuit fabrication processes. The reconfigurable attenuator integrated with RF MEMS switches and resistive attenuation modules was successfully fabricated with dimensions of 2.45  ×  4.34  ×  0.5 mm 3 , which is 1/1000th of the size of a conventional step attenuator. The measured RF performance revealed that the attenuator provides 10–70 dB attenuation at 10 dB intervals from 0.1–20 GHz with an accuracy better than  ±1.88 dB at 60 dB and an error of less than 2.22 dB at 10 dB. The return loss of each state of the 3-bit attenuator was better than 11.95 dB (VSWR  <  1.71) over the entire operating band. (paper)

Characteristic performance of radio-frequency(RF) plasma heating using inverter RF power supplies

International Nuclear Information System (INIS)

Imai, Takahiro; Uesugi, Yoshihiko; Takamura, Shuichi; Sawada, Hiroyuki; Hattori, Norifumi

2000-01-01

High heat flux plasma are produced by high powe (∼14 kW) ICRF heating using inverter power supplies in the linear divertor simulator NAGDIS-II. The power flow of radiated rf power is investigated by a calorimetric method. Conventional power calculation using antenna voltage and current gives that about 70% of the rf power is radiated into the plasma. But increase of the heat load at the target and anode is about 10% of the rf power. Through this experiment, we find that about half of the rf power is lost at the antenna surface through the formation of rf induced sheath. And about 30% of the power is lost into the vacuum vessel through the charge exchange and elastic collision of ions with neutrals. (author)

Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

Directory of Open Access Journals (Sweden)

Fumihiko Tamura

2002-06-01

Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

Simulation and optimization of a totally free flexible RF MEMS switch

International Nuclear Information System (INIS)

Lorphelin, N; Robin, R; Rollier, A S; Touati, S; Kanciurzewski, A; Millet, O; Segueni, K

2009-01-01

This paper presents the principle and the modeling of an innovative RF MEMS switch designed for low voltage applications, especially for mobile phones. This switch is based on a totally free flexible membrane, which is supported by pillars and actuated electrostatically by two pairs of electrodes, enabling two forced states. The main advantage of this structure is the use of a lever effect in order to provide high deflections above the transmission line even with a small gap, which explains why the actuation voltage is small compared to classical MEMS switches. The Euler–Bernoulli beam theory is applied to build an analytical 1D model with boundary conditions, which depend on the type of actuation and if pull-in is reached or not. This model is discretized and solved by the finite difference method. Then, a more accurate 3D finite element method is applied to add corrections to the first model. Once this modeling approach is validated, it is used to determine adequate geometrical parameters for the desired switch specifications. Mechanical characterizations on processed components show a pull-in voltage about 7.5 V, which is in good agreement with simulated values. RF measurements show excellent performances

Review of pulsed rf power generation

International Nuclear Information System (INIS)

Lavine, T.L.

1992-04-01

I am going to talk about pulsed high-power rf generation for normal-conducting electron and positron linacs suitable for applications to high-energy physics in the Next Linear Collider, or NLC. The talk will cover some basic rf system design issues, klystrons and other microwave power sources, rf pulse-compression devices, and test facilities for system-integration studies

New developments in RF power sources

International Nuclear Information System (INIS)

Miller, R.H.

1994-06-01

The most challenging rf source requirements for high-energy accelerators presently being studied or designed come from the various electron-positron linear collider studies. All of these studies except TESLA (the superconducting entry in the field) have specified rf sources with much higher peak powers than any existing tubes at comparable high frequencies. While circular machines do not, in general, require high peak power, the very high luminosity electron-positron rings presently being designed as B factories require prodigious total average rf power. In this age of energy conservation, this puts a high priority on high efficiency for the rf sources. Both modulating anodes and depressed collectors are being investigated in the quest for high efficiency at varying output powers

Practical Switching-Based Hybrid FSO/RF Transmission and Its Performance Analysis

KAUST Repository

Usman, Muneer

2014-10-01

Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless backhaul. We present and analyze a switching-based transmission scheme for the hybrid FSO/RF system. Specifically, either the FSO or RF link will be active at a certain time instance, with the FSO link enjoying a higher priority. We considered both a single-threshold case and a dual-threshold case for FSO link operation. Analytical expressions have been obtained for the outage probability, average bit error rate, and ergodic capacity for the resulting system. Numerical examples are presented to compare the performance of the hybrid scheme with the FSO-only scenario.

Practical Switching-Based Hybrid FSO/RF Transmission and Its Performance Analysis

KAUST Repository

Usman, Muneer; Hong-Chuan Yang; Alouini, Mohamed-Slim

2014-01-01

Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless backhaul. We present and analyze a switching-based transmission scheme for the hybrid FSO/RF system. Specifically, either the FSO or RF link will be active at a certain time instance, with the FSO link enjoying a higher priority. We considered both a single-threshold case and a dual-threshold case for FSO link operation. Analytical expressions have been obtained for the outage probability, average bit error rate, and ergodic capacity for the resulting system. Numerical examples are presented to compare the performance of the hybrid scheme with the FSO-only scenario.

High RF Power Production for CLIC

CERN Document Server

Syratchev, I; Adli, E; Taborelli, M

2007-01-01

The CLIC Power Extraction and Transfer Structure (PETS) is a passive microwave device in which bunches of the drive beam interact with the impedance of the periodically loaded waveguide and excite preferentially the synchronous mode. The RF power produced (several hundred MW) is collected at the downstream end of the structure by means of the Power Extractor and delivered to the main linac structure. The PETS geometry is a result of multiple compromises between beam stability and main linac RF power needs. Another requirement is to provide local RF power termination in case of accelerating structure failure (ON/OFF capability). Surface electric and magnetic fields, power extraction method, HOM damping, ON/OFF capability and fabrication technology were all evaluated to provide a reliable design

Experimental Validation of Topology Optimization for RF MEMS Capacitive Switch Design

DEFF Research Database (Denmark)

Philippine, Mandy Axelle; Zareie, Hosein; Sigmund, Ole

2013-01-01

In this paper, we present 30 distinct RF MEMS capacitive switch designs that are the product of topology optimizations that control key mechanical properties such as stiffness, response to intrinsic stress gradients, and temperature sensitivity. The designs were evaluated with high-accuracy simul...

Rf power sources

International Nuclear Information System (INIS)

Allen, M.A.

1988-05-01

This paper covers RF power sources for accelerator applications. The approach has been with particular customers in mind. These customers are high energy physicists who use accelerators as experimental tools in the study of the nucleus of the atom, and synchrotron light sources derived from electron or positron storage rings. This paper is confined to electron-positron linear accelerators since the RF sources have always defined what is possible to achieve with these accelerators. 11 refs., 13 figs

An RF-to-DC energy harvester for co-integration in a low-power 2.4 GHz transceiver frontend

NARCIS (Netherlands)

Masuch, J.; Delgado-Restituto, M.; Milosevic, D.; Baltus, P.G.M.

2012-01-01

A 2.4 GHz energy harvester for co-integration into a low-power transceiver (TRx) operating at the same frequency is presented. An RF switch decouples the harvester from the TRx and keeps the performance degradation of the TRx low, i.e. 0.2 dB reduced output power in Tx-mode and 0.4 dB reduced

RF characterization and testing of ridge waveguide transitions for RF power couplers

Energy Technology Data Exchange (ETDEWEB)

Kumar, Rajesh; Jose, Mentes; Singh, G.N. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kumar, Girish [Department of Electrical Engineering, IIT Bombay, Mumbai 400076,India (India); Bhagwat, P.V. [Ion Accelerator Development Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2016-12-01

RF characterization of rectangular to ridge waveguide transitions for RF power couplers has been carried out by connecting them back to back. Rectangular waveguide to N type adapters are first calibrated by TRL method and then used for RF measurements. Detailed information is obtained about their RF behavior by measurements and full wave simulations. It is shown that the two transitions can be characterized and tuned for required return loss at design frequency of 352.2 MHz. This opens the possibility of testing and conditioning two transitions together on a test bench. Finally, a RF coupler based on these transitions is coupled to an accelerator cavity. The power coupler is successfully tested up to 200 kW, 352.2 MHz with 0.2% duty cycle.

High-powered, solid-state rf systems

International Nuclear Information System (INIS)

Reid, D.W.

1987-01-01

Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

High power RF oscillator with Marx generators

International Nuclear Information System (INIS)

Murase, Hiroshi; Hayashi, Izumi

1980-01-01

A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

High power rf component testing for the NLC

International Nuclear Information System (INIS)

Vlieks, A.E.; Fowkes, W.R.; Loewen, R.J.; Tantawi, S.G.

1998-09-01

In the Next Linear Collider (NLC), the high power rf components must be capable of handling peak rf power levels in excess of 600 MW. In the current view of the NLC, even the rectangular waveguide components must transmit at least 300 MW rf power. At this power level, peak rf fields can greatly exceed 100 MV/m. The authors present recent results of high power tests performed at the Accelerator Structure Test Area (ASTA) at SLAC. These tests are designed to investigate the rf breakdown limits of several new components potentially useful for the NLC. In particular, the authors tested a new TE 01 --TE 10 circular to rectangular wrap-around mode converter, a modified (internal fin) Magic Tee hybrid, and an upgraded flower petal mode converter

Pulsed rf systems for large storage rings

International Nuclear Information System (INIS)

Wilson, P.B.

1979-03-01

The possibility is considered that by using a pulsed rf system a substantial reduction can be made in the rf power requirement for the next generation of large storage rings. For a ring with a sufficiently large circumference, the time between bunch passages, T/sub b/, can exceed the cavity filling time, T/sub f/. As the ratio T/sub b//T/sub f/ increases, it is clear that at some point the average power requirement can be reduced by pulsing the rf to the cavities. In this mode of operation, the rf power is turned on a filling time or so before the arrival of a bunch and is switched off again at the time of bunch passage. There is no rf energy in the accelerating structure, and hence no power dissipation, for most of the period between bunches

Embedded control system for high power RF amplifiers

International Nuclear Information System (INIS)

Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

2011-01-01

RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

Series-Tuned High Efficiency RF-Power Amplifiers

DEFF Research Database (Denmark)

Vidkjær, Jens

2008-01-01

An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

High power RF systems for the BNL ERL project

Energy Technology Data Exchange (ETDEWEB)

Zaltsman, A.; Lambiase, R.

2011-03-28

The Energy Recovery Linac (ERL) project, now under construction at Brookhaven National Laboratory, requires two high power RF systems. The first RF system is for the 703.75 MHz superconducting electron gun. The RF power from this system is used to drive nearly half an Ampere of beam current to 2 MeV. There is no provision to recover any of this energy so the minimum amplifier power is 1 MW. It consists of 1 MW CW klystron, transmitter and power supplies, 1 MW circulator, 1 MW dummy load and a two-way power splitter. The second RF system is for the 703.75 MHz superconducting cavity. The system accelerates the beam to 54.7 MeV and recovers this energy. It will provide up to 50 kW of CW RF power to the cavity. It consists of 50 kW transmitter, circulator, and dummy load. This paper describes the two high power RF systems and presents the test data for both.

Low reflectance high power RF load

Science.gov (United States)

Ives, R. Lawrence; Mizuhara, Yosuke M.

2016-02-02

A load for traveling microwave energy has an absorptive volume defined by cylindrical body enclosed by a first end cap and a second end cap. The first end cap has an aperture for the passage of an input waveguide with a rotating part that is coupled to a reflective mirror. The inner surfaces of the absorptive volume consist of a resistive material or are coated with a coating which absorbs a fraction of incident RF energy, and the remainder of the RF energy reflects. The angle of the reflector and end caps is selected such that reflected RF energy dissipates an increasing percentage of the remaining RF energy at each reflection, and the reflected RF energy which returns to the rotating mirror is directed to the back surface of the rotating reflector, and is not coupled to the input waveguide. Additionally, the reflector may have a surface which generates a more uniform power distribution function axially and laterally, to increase the power handling capability of the RF load. The input waveguide may be corrugated for HE11 mode input energy.

RF-Trapped Chip Scale Helium Ion Pump (RFT-CHIP)

Science.gov (United States)

2016-04-06

utilizes two operation states: an ion extraction state and an RF electron trapping state. A high power RF switch S1 (RF- LAMBDA RFSP2TRDC06G, DC-6 GHz...integrated in time. The electric potential is obtained by solution of Poisson’s equation using an incomplete LU BiConjugate Gradient sparse matrix

Design of an L-band normally conducting RF gun cavity for high peak and average RF power

Energy Technology Data Exchange (ETDEWEB)

Paramonov, V., E-mail: paramono@inr.ru [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Philipp, S. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Rybakov, I.; Skassyrskaya, A. [Institute for Nuclear Research of Russian Academy of Sciences, 60-th October Anniversary prospect 7a, 117312 Moscow (Russian Federation); Stephan, F. [Deutsches Elektronen-Synchrotron DESY, Platanenallee 6, D-15738 Zeuthen (Germany)

2017-05-11

To provide high quality electron bunches for linear accelerators used in free electron lasers and particle colliders, RF gun cavities operate with extreme electric fields, resulting in a high pulsed RF power. The main L-band superconducting linacs of such facilities also require a long RF pulse length, resulting in a high average dissipated RF power in the gun cavity. The newly developed cavity based on the proven advantages of the existing DESY RF gun cavities, underwent significant changes. The shape of the cells is optimized to reduce the maximal surface electric field and RF loss power. Furthermore, the cavity is equipped with an RF probe to measure the field amplitude and phase. The elaborated cooling circuit design results in a lower temperature rise on the cavity RF surface and permits higher dissipated RF power. The paper presents the main solutions and results of the cavity design.

High Power RF Test Facility at the SNS

CERN Document Server

Kang, Yoon W; Campisi, Isidoro E; Champion, Mark; Crofford, Mark; Davis, Kirk; Drury, Michael A; Fuja, Ray E; Gurd, Pamela; Kasemir, Kay-Uwe; McCarthy, Michael P; Powers, Tom; Shajedul Hasan, S M; Stirbet, Mircea; Stout, Daniel; Tang, Johnny Y; Vassioutchenko, Alexandre V; Wezensky, Mark

2005-01-01

RF Test Facility has been completed in the SNS project at ORNL to support test and conditioning operation of RF subsystems and components. The system consists of two transmitters for two klystrons powered by a common high voltage pulsed converter modulator that can provide power to two independent RF systems. The waveguides are configured with WR2100 and WR1150 sizes for presently used frequencies: 402.5 MHz and 805 MHz. Both 402.5 MHz and 805 MHz systems have circulator protected klystrons that can be powered by the modulator capable of delivering 11 MW peak and 1 MW average power. The facility has been equipped with computer control for various RF processing and complete dual frequency operation. More than forty 805 MHz fundamental power couplers for the SNS superconducting linac (SCL) cavitites have been RF conditioned in this facility. The facility provides more than 1000 ft2 floor area for various test setups. The facility also has a shielded cave area that can support high power tests of normal conducti...

Eighth CW and High Average Power RF Workshop

CERN Document Server

2014-01-01

We are pleased to announce the next Continuous Wave and High Average RF Power Workshop, CWRF2014, to take place at Hotel NH Trieste, Trieste, Italy from 13 to 16 May, 2014. This is the eighth in the CWRF workshop series and will be hosted by Elettra - Sincrotrone Trieste S.C.p.A. (www.elettra.eu). CWRF2014 will provide an opportunity for designers and users of CW and high average power RF systems to meet and interact in a convivial environment to share experiences and ideas on applications which utilize high-power klystrons, gridded tubes, combined solid-state architectures, high-voltage power supplies, high-voltage modulators, high-power combiners, circulators, cavities, power couplers and tuners. New ideas for high-power RF system upgrades and novel ways of RF power generation and distribution will also be discussed. CWRF2014 sessions will start on Tuesday morning and will conclude on Friday lunchtime. A visit to Elettra and FERMI will be organized during the workshop. ORGANIZING COMMITTEE (OC): Al...

Development of Phase Change Materials for RF Switch Applications

Science.gov (United States)

King, Matthew Russell

For decades chalcogenide-based phase change materials (PCMs) have been reliably implemented in optical storage and digital memory platforms. Owing to the substantial differences in optical and electronic properties between crystalline and amorphous states, device architectures requiring a "1" and "0" or "ON" and "OFF" states are attainable with PCMs if a method for amorphizing and crystallizing the PCM is demonstrated. Taking advantage of more than just the binary nature of PCM electronic properties, recent reports have shown that the near-metallic resistivity of some PCMs allow one to manufacture high performance RF switches and related circuit technologies. One of the more promising RF switch technologies is the Inline Phase Change Switch (IPCS) which utilizes GeTe as the active material. Initial reports show that an electrically isolated, thermally coupled thin film heater can successfully convert GeTe between crystalline and amorphous states, and with proper design an RF figure of merit cutoff frequency (FCO) of 12.5 THz can be achieved. In order to realize such world class performance a significant development effort was undertaken to understand the relationship between fundamental GeTe properties, thin film deposition method and resultant device properties. Deposition pressure was found to be the most important deposition process parameter, as it was found to control Ge:Te ratio, oxygen content, Ar content, film density and surface roughness. Ultimately a first generation deposition process produced GeTe films with a crystalline resistivity of 3 ohm-mum. Upon implementing these films into IPCS devices, post-cycling morphological analysis was undertaken using STEM and related analyses. It was revealed that massive structural changes occur in the GeTe during switching, most notably the formation of an assembly of voids along the device centerline and large GeTe grains on either side of the so-called active region. Restructuring of this variety was tied to

High power RF transmission line component development

International Nuclear Information System (INIS)

Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I.

1999-12-01

We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant ε=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

High power RF transmission line component development

Energy Technology Data Exchange (ETDEWEB)

Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I

1999-12-01

We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant {epsilon}=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

International Nuclear Information System (INIS)

Basu, A; Adams, G G; McGruer, N E

2016-01-01

Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

The microlasertron: An efficient switched-power source of mm wavelength radiation

International Nuclear Information System (INIS)

Palmer, R.B.

1986-12-01

An extension of W. Willis' ''Switched Power Linac'' is studied. Pulsed laser light falls on a photocathode wire, or wires, within a simple resonant structure. The resulting pulsed electron current between the wire and the structure wall drives the resonant field, and rf energy is extracted in the mm to cm wavelength range. Various geometries are presented, including one consisting of a simple array of parallel wires over a plane conductor. Results from a one-dimensional simulation are presented

Development of C-band High-Power Mix-Mode RF Window

CERN Document Server

Michizono, S; Matsumoto, T; Nakao, K; Takenaka, T

2004-01-01

High power c-band (5712 MHz) rf system (40 MW, 2 μs, 50 Hz) is under consideration for the electron-linac upgrade aimed for the super KEKB project. An rf window, which isolates the vacuum and pass the rf power, is one of the most important components for the rf system. The window consists of a ceramic disk and a pill-box housing. The mix-mode rf window is designed so as to decrease the electric field on the periphery of the ceramic disk. A resonant ring is assembled in order to examine the high-power transmission test. The window was tested up to the transmission power of 160 MW. The rf losses are also measured during the rf operation.

Study on the Effects of the Modulator Output Ripple on the RF System of the KOMAC 100-MeV Proton Linear Accelerator

Energy Technology Data Exchange (ETDEWEB)

Kwon, Hyeok Jung; Kim, Han Sung; Seol, Kyung Tae; Jeong, Hae Sung; Kim, Sung Gu; Cho, Yong Sub [KAERI, Daejeon (Korea, Republic of)

2016-05-15

The high power system of the proton linear accelerator consists of accelerating cavities such as Radio Frequency Quadrupole (RFQ) and Drift Tube Linac (DTL), high power radio frequency (RF) systems such as klystrons, RF transmission lines and modulators as a klystron power supply. The modulator used at KOMAC adopted a high frequency switching technology using a 3-phase full bridge converter topology to produce 5.8 MW peak power at -105 kV with 9 % duty and produces a current ripple corresponding to the harmonics of the switching frequency. In this paper, the output ripple from the modulator is analyzed and its effects on the high power RF system are presented. The ripple current of the modulator was measured and analyzed. The higher harmonics of the switching frequency were measured and the dominant one was the third harmonic. And this ripple had an effect on the RF signal which was amplified through the klystron and delivered to the DTL. The dominant ripple component of the RF signal was also the third harmonics of the IGBT switching frequency of the modulator.

Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

Energy Technology Data Exchange (ETDEWEB)

Guo, Jiquan; Tantawi, Sami; /SLAC

2007-01-10

First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

RF power generation for future linear colliders

International Nuclear Information System (INIS)

Fowkes, W.R.; Allen, M.A.; Callin, R.S.; Caryotakis, G.; Eppley, K.R.; Fant, K.S.; Farkas, Z.D.; Feinstein, J.; Ko, K.; Koontz, R.F.; Kroll, N.; Lavine, T.L.; Lee, T.G.; Miller, R.H.; Pearson, C.; Spalek, G.; Vlieks, A.E.; Wilson, P.B.

1990-06-01

The next linear collider will require 200 MW of rf power per meter of linac structure at relatively high frequency to produce an accelerating gradient of about 100 MV/m. The higher frequencies result in a higher breakdown threshold in the accelerating structure hence permit higher accelerating gradients per meter of linac. The lower frequencies have the advantage that high peak power rf sources can be realized. 11.42 GHz appears to be a good compromise and the effort at the Stanford Linear Accelerator Center (SLAC) is being concentrated on rf sources operating at this frequency. The filling time of the accelerating structure for each rf feed is expected to be about 80 ns. Under serious consideration at SLAC is a conventional klystron followed by a multistage rf pulse compression system, and the Crossed-Field Amplifier. These are discussed in this paper

RF Power Generation in LHC

CERN Document Server

Brunner, O C; Valuch, D

2003-01-01

The counter-rotating proton beams in the Large Hadron Collider (LHC) will be captured and then accelerated to their final energies of 2 x 7 TeV by two identical 400 MHz RF systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell super-conducting (SC) cavity. Four klystrons are powered by a 100 kV, 40A AC/DC power converter, previously used for the operation of the LEP klystrons. A five-gap thyratron crowbar protects the four klystrons in each of these units. The technical specification and measured performance of the various high-power elements are discussed. These include the 400MHz/300kW klystrons with emphasis on their group delay and the three-port circulators, which have to cope with peak reflected power levels up to twice the simultaneously applied incident power of 300 kW. In addition, a novel ferrite loaded waveguide absorber, used as termination for port No...

High Power RF Transmitters for ICRF Applications on EAST

International Nuclear Information System (INIS)

Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

2013-01-01

An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

Switch mode power supply

International Nuclear Information System (INIS)

Kim, Hui Jun

1993-06-01

This book concentrates on switch mode power supply. It has four parts, which are introduction of switch mode power supply with DC-DC converter such as Buck converter boost converter, Buck-boost converter and PWM control circuit, explanation for SMPS with DC-DC converter modeling and power mode control, resonance converter like resonance switch, converter, multi resonance converter and series resonance and parallel resonance converters, basic test of SMPS with PWM control circuit, Buck converter, Boost converter, flyback converter, forward converter and IC for control circuit.

Advances in high-power rf amplifiers

International Nuclear Information System (INIS)

Tallerico, P.J.

1979-01-01

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

Science.gov (United States)

Nessel, James; Miranda, Felix

2013-01-01

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

100 kV solid-state switch for fusion heating systems

International Nuclear Information System (INIS)

Beaumont, B.; Bertrand, E.; Brugnetti, R.; Chatroux, D.; Kazarian, F.; Milly, R.; Prou, M.; Rigole, H.

2005-01-01

Power switching in RF heating systems is a delicate function as it is often linked to high power tube protection. In most RF systems, the end stage power tube is fed by a high voltage power supply (HVPS), which connection to the tube has to be interrupted in case of arc suspicion. The amount of energy that is allowable to be dissipated in the arc is in the range of 10-50 J, to limit the degradations observed on the tube structures. The protection function is usually performed by a crowbar. Furthermore, the HVPS is often shared by several power tubes, and the loss of all the power from the group of tubes is to be avoided to minimize the perturbation on the plasma experiment. A description of a 40 kV thyristor based crowbar and a 100 kV, 25 A MOSFET switch is given, as well as the contours of the existing components for high power switching applications. By combining small components, such as thyristors or MOSFET, in matrix, highly compact and reliable units have been built and implemented in Tore Supra RF systems

Rf-to-dc power converters for wireless powering

KAUST Repository

Ouda, Mahmoud Hamdy

2016-12-01

Various examples are provided related to radio frequency (RF) to direct current (DC) power conversion. In one example, a RF-to-DC converter includes a fully cross-coupled rectification circuit including a pair of forward rectifying transistors and a feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a fully cross-coupled rectification circuit including a pair of forward rectifying transistors; and providing a DC output voltage from an output connection of the fully cross-coupled rectification circuit, where gating of the pair of forward rectifying transistors is controlled by feedback bias signals provided to gates of the pair of forward rectifying transistors via feedback branch elements.

Glycol-Substitute for High Power RF Water Loads

CERN Document Server

Ebert, Michael

2005-01-01

In water loads for high power rf applications, power is dissipated directly into the coolant. Loads for frequencies below approx. 1GHz are ordinarily using an ethylene glycol-water mixture as coolant. The rf systems at DESY utilize about 100 glycol water loads with powers ranging up to 600kW. Due to the increased ecological awareness, the use of glycol is now considered to be problematic. In EU it is forbidden to discharge glycol into the waste water system. In case of cooling system leakages one has to make sure that no glycol is lost. Since it is nearly impossible to avoid any glycol loss in large rf systems, a glycol-substitute was searched for and found. The found sodium-molybdate based substitute is actually a additive for corrosion protection in water systems. Sodium-molybdate is ecologically harmless; for instance, it is also used as fertilizer in agriculture. A homoeopathic dose of 0.4% mixed into deionised water gives better rf absorption characteristics than a 30% glycol mixture. The rf coolant feat...

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Science.gov (United States)

Abouzied, Mohamed Ali Mohamed

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various

Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%

CERN Document Server

Baikov, Andrey Yu; Syratchev, Igor

2015-01-01

The increase in efficiency of RF power generation for future large accelerators is considered a high priority issue. The vast majority of the existing commercial high-power RF klystrons operates in the electronic efficiency range between 40% and 55%. Only a few klystrons available on the market are capable of operating with 65% efficiency or above. In this paper, a new method to achieve 90% RF power conversion efficiency in a klystron amplifier is presented. The essential part of this method is a new bunching technique - bunching with bunch core oscillations. Computer simulations confirm that the RF production efficiency above 90% can be reached with this new bunching method. The results of a preliminary study of an L-band, 20-MW peak RF power multibeam klystron for Compact Linear Collider with the efficiency above 85% are presented.

High power RF systems for LEHIPA of ADS

International Nuclear Information System (INIS)

Pande, Manjiri; Shrotriya, Sandip; Sharma, Sonal; Rao, B.V.R.; Mishra, J.K.; Patel, Niranjan; Gupta, S.K.

2011-01-01

Worldwide accelerator driven sub-critical system (ADS) has generated a huge interest for various reasons. In India, as a part of accelerator driven sub-critical system (ADS) program, a normal conducting, low energy high intensity proton accelerator (LEHIPA) of energy 20 MeV and beam current of 30 mA is being developed in Bhabha Atomic Research Centre (BARC). LEHIPA comprises of Electron Cyclotron Resonance (ECR) ion source (50 KeV), Radio Frequency Quadrupole (RFQ) accelerator (3 MeV) and Drift tube Linac (DTL) 1 and 2 (10 MeV and 20 MeV respectively). As per the accelerator physics design, RFQ requires nearly 530 kW RF power while each of DTL need 900 kW. Each accelerating cavity will be driven by a one- megawatt (CW) klystron based high power RF (HPRF) system at 352.21 MHz. Three such RF systems will be developed. The RF system has been designed around five cavity klystron tube TH2089F (Thales make) capable of delivering 1 MW continuous wave power at 352.21 MHz. The klystron has a gain of 40 dB and efficiency around 62 %. Each of the RF system comprises of a low power solid state driver (∼ 100 W), klystron tube, harmonic filter, directional coupler, Y-junction circulator (AFT make), RF load and WR2300 wave guide based RF transmission line each of 1 MW capacity. It also includes other subsystems like bias supplies (high voltage (HV) and low voltage (LV)), HV interface system, interlock and protection circuits, dedicated low conductivity water-cooling, pulsing circuitry/mechanisms etc. WR 2300 based RF transmission line transmits and feeds the RE power from klystron source to respective accelerating cavity. This transmission line starts from second port of the circulator and consists of straight sections, full height to half height transition, magic Tee, termination load at the centre of magic tee, half height sections, directional couplers and RE windows. For X-ray shielding, klystron will be housed in a lead (3 mm) based shielded cage. This system set up has a

Practical switching power supply design

CERN Document Server

Brown, Martin C

1990-01-01

Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

High power tests of X-band RF windows at KEK

Energy Technology Data Exchange (ETDEWEB)

Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

1997-04-01

Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

Peel-and-Stick Sensors Powered by Directed RF Energy

Energy Technology Data Exchange (ETDEWEB)

Lalau-Keraly, Christopher; Daniel, George; Lee, Joseph; Schwartz, David

2017-08-30

PARC, a Xerox Company, is developing a low-cost system of peel-and-stick wireless sensors that will enable widespread building environment sensor deployment with the potential to deliver up to 30% energy savings. The system is embodied by a set of RF hubs that provide power to automatically located sensor nodes, and relay data wirelessly to the building management system (BMS). The sensor nodes are flexible electronic labels powered by rectified RF energy transmitted by an RF hub and can contain multiple printed and conventional sensors. The system design overcomes limitations in wireless sensors related to power delivery, lifetime, and cost by eliminating batteries and photovoltaic devices. Sensor localization is performed automatically by the inclusion of a programmable multidirectional antenna array in the RF hub. Comparison of signal strengths while the RF beam is swept allows for sensor localization, reducing installation effort and enabling automatic recommissioning of sensors that have been relocated, overcoming a significant challenge in building operations. PARC has already demonstrated wireless power and temperature data transmission up to a distance of 20m with less than one minute between measurements, using power levels well within the FCC regulation limits in the 902-928 MHz ISM band. The sensor’s RF energy harvesting antenna achieves high performance with dimensions below 5cm x 9cm

Indoor Wireless RF Energy Transfer for Powering Wireless Sensors

Directory of Open Access Journals (Sweden)

H. Visser

2012-12-01

Full Text Available For powering wireless sensors in buildings, rechargeable batteries may be used. These batteries will be recharged remotely by dedicated RF sources. Far-field RF energy transport is known to suffer from path loss and therefore the RF power available on the rectifying antenna or rectenna will be very low. As a consequence, the RF-to-DC conversion efficiency of the rectenna will also be very low. By optimizing not only the subsystems of a rectenna but also taking the propagation channel into account and using the channel information for adapting the transmit antenna radiation pattern, the RF energy transport efficiency will be improved. The rectenna optimization, channel modeling and design of a transmit antenna are discussed.

Low power RF beam control electronics for the LEB

International Nuclear Information System (INIS)

Mestha, L.K.; Mangino, J.; Brouk, V.; Uher, T.; Webber, R.C.

1993-05-01

Beam Control Electronics for the Low Energy Booster (LEB) should provide a fine reference phase and frequency for the High Power RF System. Corrections applied on the frequency of the rf signal will reduce dipole synchrotron oscillations due to power supply regulation errors, errors in frequency source or errors in the cavity voltage. It will allow programmed beam radial position control throughout the LEB acceleration cycle. Furthermore the rf signal provides necessary connections during, adiabatic capture of the beam as injected into the LEB by the Linac and will guarantee LEB rf phase synchronism with the Medium Energy Booster (MEB) rf at a programmed time in the LEB cycle between a unique LEB bucket and a unique MEB bucket. We show in this paper a design and possible interfaces with other subsystems of the LEB such as the beam instrumentation, High Power RF Stations, global accelerator controls and the precision timing system. The outline of various components of the beam control system is also presented followed by some test results

Rf power systems for the national synchrotron light source

International Nuclear Information System (INIS)

Dickinson, T.; Rheaume, R.H.

1981-01-01

The booster synchrotron and the two storage rings at the NSLS are provided with rf power systems of 3 kW, 50 kW, and 500 kW nominal output power, all at 53 MHz. This power is supplied by grounded grid tetrode amplifiers designed for television broadcast service. These amplifiers and associated power supplies, control and interlock systems, rf controls, and computer interface are described

LEDA RF distribution system design and component test results

International Nuclear Information System (INIS)

Roybal, W.T.; Rees, D.E.; Borchert, H.L.; McCarthy, M.; Toole, L.

1998-01-01

The 350 MHz and 700 MHz RF distribution systems for the Low Energy Demonstration Accelerator (LEDA) have been designed and are currently being installed at Los Alamos National Laboratory. Since 350 MHz is a familiar frequency used at other accelerator facilities, most of the major high-power components were available. The 700 MHz, 1.0 MW, CW RF delivery system designed for LEDA is a new development. Therefore, high-power circulators, waterloads, phase shifters, switches, and harmonic filters had to be designed and built for this applications. The final Accelerator Production of Tritium (APT) RF distribution systems design will be based on much of the same technology as the LEDA systems and will have many of the RF components tested for LEDA incorporated into the design. Low power and high-power tests performed on various components of these LEDA systems and their results are presented here

Simplified design of switching power supplies

CERN Document Server

Lenk, John

1995-01-01

* Describes the operation of each circuit in detail * Examines a wide selection of external components that modify the IC package characteristics * Provides hands-on, essential information for designing a switching power supply Simplified Design of Switching Power Supplies is an all-inclusive, one-stop guide to switching power-supply design. Step-by-step instructions and diagrams render this book essential for the student and the experimenter, as well as the design professional. Simplified Design of Switching Power Supplies concentrates on the use of IC regulators. All popular forms of swit

Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

KAUST Repository

Rakia, Tamer

2016-02-26

Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non- coherent hybrid FSO/RF systems, employing an adaptive combining scheme. Specifically, we activate the RF link along with the FSO link when FSO link quality is unacceptable, and adaptively set RF transmission power to ensure constant combined signal-to-noise ratio at receiver terminal. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are derived. Numerical examples show that, the hybrid FSO/RF systems with power adaptation achieve considerable outage performance improvement over conventional hybrid FSO/RF systems without power adaptation. © 2015 IEEE.

Development of new S-band RF window for stable high-power operation in linear accelerator RF system

Science.gov (United States)

Joo, Youngdo; Lee, Byung-Joon; Kim, Seung-Hwan; Kong, Hyung-Sup; Hwang, Woonha; Roh, Sungjoo; Ryu, Jiwan

2017-09-01

For stable high-power operation, a new RF window is developed in the S-band linear accelerator (Linac) RF systems of the Pohang Light Source-II (PLS-II) and the Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL). The new RF window is designed to mitigate the strength of the electric field at the ceramic disk and also at the waveguide-cavity coupling structure of the conventional RF window. By replacing the pill-box type cavity in the conventional RF window with an overmoded cavity, the electric field component perpendicular to the ceramic disk that caused most of the multipacting breakdowns in the ceramic disk was reduced by an order of magnitude. The reduced electric field at the ceramic disk eliminated the Ti-N coating process on the ceramic surface in the fabrication procedure of the new RF window, preventing the incomplete coating from spoiling the RF transmission and lowering the fabrication cost. The overmoded cavity was coupled with input and output waveguides through dual side-wall coupling irises to reduce the electric field strength at the waveguide-cavity coupling structure and the possibility of mode competitions in the overmoded cavity. A prototype of the new RF window was fabricated and fully tested with the Klystron peak input power, pulse duration and pulse repetition rate of 75 MW, 4.5 μs and 10 Hz, respectively, at the high-power test stand. The first mass-produced new RF window installed in the PLS-II Linac is running in normal operation mode. No fault is reported to date. Plans are being made to install the new RF window to all S-band accelerator RF modules of the PLS-II and PAL-XFEL Linacs. This new RF window may be applied to the output windows of S-band power sources like Klystron as wells as the waveguide windows of accelerator facilities which operate in S-band.

Proceedings of the switched power workshop

International Nuclear Information System (INIS)

Fernow, R.C.

1988-01-01

These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

A describing function approach to bipolar RF-power amplifier simulation

DEFF Research Database (Denmark)

Vidkjær, Jens

1981-01-01

A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

RF MEMS theory, design, and technology

CERN Document Server

Rebeiz, Gabriel M

2003-01-01

Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

RF power consumption emulation optimized with interval valued homotopies

DEFF Research Database (Denmark)

Musiige, Deogratius; Anton, François; Yatskevich, Vital

2011-01-01

This paper presents a methodology towards the emulation of the electrical power consumption of the RF device during the cellular phone/handset transmission mode using the LTE technology. The emulation methodology takes the physical environmental variables and the logical interface between...... the baseband and the RF system as inputs to compute the emulated power dissipation of the RF device. The emulated power, in between the measured points corresponding to the discrete values of the logical interface parameters is computed as a polynomial interpolation using polynomial basis functions....... The evaluation of polynomial and spline curve fitting models showed a respective divergence (test error) of 8% and 0.02% from the physically measured power consumption. The precisions of the instruments used for the physical measurements have been modeled as intervals. We have been able to model the power...

CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

KAUST Repository

Abdul Rahim, Farhan

2014-05-01

MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

A 12 GHz RF Power Source for the CLIC Study

Energy Technology Data Exchange (ETDEWEB)

Schirm, Karl; /CERN; Curt, Stephane; /CERN; Dobert, Steffen; /CERN; McMonagle, Gerard; /CERN; Rossat, Ghislain; /CERN; Syratchev, Igor; /CERN; Timeo, Luca; /CERN; Haase, Andrew /SLAC; Jensen, Aaron; /SLAC; Jongewaard, Erik; /SLAC; Nantista, Christopher; /SLAC; Sprehn, Daryl; /SLAC; Vlieks, Arnold; /SLAC; Hamdi, Abdallah; /Saclay; Peauger, Franck; /Saclay; Kuzikov, Sergey; /Nizhnii Novgorod, IAP; Vikharev, Alexandr; /Nizhnii Novgorod, IAP

2012-07-03

The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

A 12 GHZ RF Power source for the CLIC study

CERN Document Server

Peauger, F; Curt, S; Doebert, S; McMonagle, G; Rossat, G; Schirm, KM; Syratchev, I; Timeo, L; Kuzikhov, S; Vikharev, AA; Haase, A; Sprehn, D; Jensen, A; Jongewaard, EN; Nantista, CD; Vlieks, A

2010-01-01

The CLIC RF frequency has been changed in 2008 from the initial 30 GHz to the European X-band 11.9942 GHz permitting beam independent power production using klystrons for CLIC accelerating structure testing. A design and fabrication contract for five klystrons at that frequency has been signed by different parties with SLAC. France (IRFU, CEA Saclay) is contributing a solid state modulator purchased in industry and specific 12 GHz RF network components to the CLIC study. RF pulses over 120 MW peak at 230 ns length will be obtained by using a novel SLED-I type pulse compression scheme designed and fabricated by IAP, Nizhny Novgorod, Russia. The X-band power test stand is being installed in the CLIC Test Facility CTF3 for independent structure and component testing in a bunker, but allowing, in a later stage, for powering RF components in the CTF3 beam lines. The design of the facility, results from commissioning of the RF power source and the expected performance of the Test Facility are reported.

A high peak power S-band switching system for the Advanced Photon Source (APS) Linear Accelerator (Linac)

International Nuclear Information System (INIS)

Grelick, A. E.

1998-01-01

An S-band linear accelerator is the source of particles and front end of the Advanced Photon Source [1] injector. Additionally, it will be used to support a low-energy undulator test line (LEUTL) and to drive a free-electron laser (FEL). To provide maximum linac availability for all uses, an additional modulator-klystron subsystem has been built,and a waveguide-switching and distribution subsystem is now under construction. The combined subsystems provide a hot spare for any of the five S-band transmitters that power the lina cand have been given the additional function of powering an rf gun test stand whenever they are not otherwise needed. Design considerations for the waveguide-switching subsystem, topology selection, timing, control, and system protection provisions are described

CMOS integrated switching power converters

CERN Document Server

Villar-Pique, Gerard

2011-01-01

This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

RF power harvesting: a review on designing methodologies and applications

Science.gov (United States)

Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

2017-12-01

Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

RF Power Requirements for PEFP SRF Cavity Test

International Nuclear Information System (INIS)

Kim, Han Sung; Seol, Kyung Tae; Kwon, Hyeok Jung; Cho, Yong Sub

2011-01-01

For the future extension of the PEFP (Proton Engineering Frontier Project) Proton linac, preliminary study on the SRF (superconducting radio-frequency) cavity is going on including a five-cell prototype cavity development to confirm the design and fabrication procedures and to check the RF and mechanical properties of a low-beta elliptical cavity. The main parameters of the cavity are like followings. - Frequency: 700 MHz - Operating mode: TM010 pi mode - Cavity type: Elliptical - Geometrical beta: 0.42 - Number of cells: 5 - Accelerating gradient: 8 MV/m - Epeak/Eacc: 3.71 - Bpeak/Eacc: 7.47 mT/(MV/m) - R/Q: 102.3 ohm - Epeak: 29.68 MV/m (1.21 Kilp.) - Geometrical factor: 121.68 ohm - Cavity wall thickness: 4.3 mm - Stiffening structure: Double ring - Effective length: 0.45 m For the test of the cavity at low temperature of 4.2 K, many subsystems are required such as a cryogenic system, RF system, vacuum system and radiation shielding. RF power required to generate accelerating field inside cavity depends on the RF coupling parameters of the power coupler and quality factor of the SRF cavity and the quality factor itself is affected by several factors such as operating temperature, external magnetic field level and surface condition. Therefore, these factors should be considered to estimate the required RF power for the SRF cavity test

Switched-mode power supply apparatus and method

NARCIS (Netherlands)

2013-01-01

The present invention relates to a switched-mode power supply apparatus and a corresponding method. For an effective compensation of non-linearities caused by dead- time and voltage drops in the switching power amplifier of the apparatus, an apparatus is proposed comprising a switching power

Switched-mode power supply apparatus and method

NARCIS (Netherlands)

2013-01-01

The present invention relates to a switched-mode power supply apparatus and a corresponding method. For an effective compensation of non-linearities caused by dead-time and voltage drops in the switching power amplifier of the apparatus, an apparatus is proposed comprising a switching power

RF power source for the compact linear collider test facility (CTF3)

CERN Document Server

McMonagle, G; Brown, Peter; Carron, G; Hanni, R; Mourier, J; Rossat, G; Syratchev, I V; Tanner, L; Thorndahl, L

2004-01-01

The CERN CTF3 facility will test and demonstrate many vital components of CLIC (Compact Linear Collider). This paper describes the pulsed RF power source at 2998.55 MHz for the drive-beam accelerator (DBA), which produces a beam with an energy of 150 MeV and a current of 3.5 Amps. Where possible, existing equipment from the LEP preinjector, especially the modulators and klystrons, is being used and upgraded to achieve this goal. A high power RF pulse compression system is used at the output of each klystron, which requires sophisticated RF phase programming on the low level side to achieve the required RF pulse. In addition to the 3 GHz system two pulsed RF sources operating at 1.5 GHz are being built. The first is a wide-band, low power, travelling wave tube (TWT) for the subharmonic buncher (SHB) system that produces a train of "phase coded" subpulses as part of the injector scheme. The second is a high power narrow band system to produce 20 MW RF power to the 1.5 GHz RF deflectors in the delay loop situate...

Introduction to RF power amplifier design and simulation

CERN Document Server

Eroglu, Abdullah

2015-01-01

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

Isolated and soft-switched power converter

Science.gov (United States)

Peng, Fang Zheng; Adams, Donald Joe

2002-01-01

An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

High-power RF controls for the NBS-Los Alamos racetrack microtron

International Nuclear Information System (INIS)

Young, L.M.; Biddl, R.S.

1985-01-01

The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kw cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference

EXCESS RF POWER REQUIRED FOR RF CONTROL OF THE SPALLATION NEUTRON SOURCE (SNS) LINAC, A PULSED HIGH-INTENSITY SUPERCONDUCTING PROTON ACCELERATOR

International Nuclear Information System (INIS)

Lynch, M.; Kwon, S.

2001-01-01

A high-intensity proton linac, such as that being planned for the SNS, requires accurate RF control of cavity fields for the entire pulse in order to avoid beam spill. The current design requirement for the SNS is RF field stability within ±0.5% and ±0.5 o [1]. This RF control capability is achieved by the control electronics using the excess RF power to correct disturbances. To minimize the initial capital costs, the RF system is designed with 'just enough' RF power. All the usual disturbances exist, such as beam noise, klystron/HVPS noise, coupler imperfections, transport losses, turn-on and turn-off transients, etc. As a superconducting linac, there are added disturbances of large magnitude, including Lorentz detuning and microphonics. The effects of these disturbances and the power required to correct them are estimated, and the result shows that the highest power systems in the SNS have just enough margin, with little or no excess margin

Summary of the 3rd workshop on high power RF-systems for accelerators

International Nuclear Information System (INIS)

Sigg, P.K.

2005-01-01

The aim of this workshop was to bring together experts from the field of CW and high average power RF systems. The focus was on operational and reliability issues of high-power amplifiers using klystrons and tubes, large power supplies; as well as cavity design and low-level RF and feedback control systems. All these devices are used in synchrotron radiation facilities, high power linacs and collider rings, and cyclotrons. Furthermore, new technologies and their applications were introduced, amongst other: high power solid state amplifiers, IOT amplifiers, and high voltage power supplies employing solid state controllers/crowbars. Numerical methods for complete rf-field modeling of complex RF structures like cyclotrons were presented, as well as integrated RF-cavity designs (electro-magnetic fields and mechanical structure), using numerical methods. (author)

Hybrid switch for resonant power converters

Science.gov (United States)

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

RF radiation measurement for the Advanced Photon Source (AS) personnel safety system

International Nuclear Information System (INIS)

Song, J.J.; Kim, J.; Otocki, R.; Zhou, J.

1995-01-01

The Advanced Photon Source (APS) booster and storage ring RF system consists of five 1-MW klystrons, four 5-cell cavities, and sixteen single-cell cavities. The RF power is distributed through many hundreds of feet of WR2300 waveguide with H-hybrids and circulators. In order to protect personnel from the danger of RF radiation due to loose flanges or other openings in the waveguide system, three detector systems were implemented: an RF radiation detector, a waveguide pressure switch, and a Radiax aperture detector (RAD). This paper describes RF radiation measurements on the WR 2300 waveguide system

High power RF window deposition apparatus, method, and device

Science.gov (United States)

Ives, Lawrence R.; Lucovsky, Gerald; Zeller, Daniel

2017-07-04

A process for forming a coating for an RF window which has improved secondary electron emission and reduced multipactor for high power RF waveguides is formed from a substrate with low loss tangent and desirable mechanical characteristics. The substrate has an RPAO deposition layer applied which oxygenates the surface of the substrate to remove carbon impurities, thereafter has an RPAN deposition layer applied to nitrogen activate the surface of the substrate, after which a TiN deposition layer is applied using Titanium tert-butoxide. The TiN deposition layer is capped with a final RPAN deposition layer of nitridation to reduce the bound oxygen in the TiN deposition layer. The resulting RF window has greatly improved titanium layer adhesion, reduced multipactor, and is able to withstand greater RF power levels than provided by the prior art.

Feasibility Study for High Power RF – Energy Recovery in Particle Accelerators

CERN Document Server

Betz, Michael

2010-01-01

When dealing with particle accelerators, especially in systems with travelling wave structures and low beam loading, a substantial amount of RF power is dissipated in 50Ω termination loads. For the Super Proton Synchrotron (SPS) at Cern this is 69 % of the incident RF power or about 1 MW. Different ideas, making use of that otherwise dissipated power, are presented and their feasibility is reviewed. The most feasible one, utilizing an array of semiconductor based RF/DC modules, is used to create a design concept for energy recovery in the SPS. The modules are required to operate at high power, high efficiency and with low harmonic radiation. Besides the actual RF rectifier, they contain additional components to ensure a graceful degradation of the overall system. Different rectifier architectures and semiconductor devices are compared and the most suitable ones are chosen. Two prototype devices were built and operated with up to 400 W of pulsed RF power. Broadband measurements – capturing all harmonics up ...

RF power sources for 5--15 TeV linear colliders

International Nuclear Information System (INIS)

Wilson, P.B.

1996-09-01

After outlining the design of the NLC rf system at 1 TeV, the possibility of a leap in linear collider energy into the 5--15 TeV energy range is considered. To keep the active accelerator length and ac wall-plug power within reasonable bounds, higher accelerating gradients at higher rf frequencies will be necessary. Scaling relations are developed for basic rf system parameters as a function of frequency, and some specific parameter examples are given for colliders at 34 Ghz and 91 Ghz. Concepts for rf pulse compression system design and for high power microwave sources at 34 Ghz (for example sheet-beam and multiple-beam klystrons) are briefly discussed

High power RF test of an 805 MHz RF cavity for a muon cooling channel

International Nuclear Information System (INIS)

Li, Derun; Corlett, J.; MacGill, R.; Rimmer, R.; Wallig, J.; Zisman, M.; Moretti, A.; Qian, Z.; Wu, V.; Summers, D.; Norem, J.

2002-01-01

We present recent high power RF test results on an 805 MHz cavity for a muon cooling experiment at Lab G in Fermilab. In order to achieve high accelerating gradient for large transverse emittance muon beams, the cavity design has adopted a pillbox like shape with 16 cm diameter beam iris covered by thin Be windows, which are demountable to allow for RF tests of different windows. The cavity body is made from copper with stiff stainless steel rings brazed to the cavity body for window attachments. View ports and RF probes are available for visual inspections of the surface of windows and cavity and measurement of the field gradient. Maximum of three thermo-couples can be attached to the windows for monitoring the temperature gradient on the windows caused by RF heating. The cavity was measured to have Q 0 of about 15,000 with copper windows and coupling constant of 1.3 before final assembling. A 12 MW peak power klystron is available at Lab G in Fermilab for the high power test. The cavity and coupler designs were performed using the MAFIA code in the frequency and the time domain. Numerical simulation results and cold test measurements on the cavity and coupler will be presented for comparisons

Modeling high-power RF accelerator cavities with SPICE

International Nuclear Information System (INIS)

Humphries, S. Jr.

1992-01-01

The dynamical interactions between RF accelerator cavities and high-power beams can be treated on personal computers using a lumped circuit element model and the SPICE circuit analysis code. Applications include studies of wake potentials, two-beam accelerators, microwave sources, and transverse mode damping. This report describes the construction of analogs for TM mn0 modes and the creation of SPICE input for cylindrical cavities. The models were used to study continuous generation of kA electron beam pulses from a vacuum cavity driven by a high-power RF source

A low-power RF system with accurate synchronization for a S-band RF-gun using a laser-triggered photocathode

International Nuclear Information System (INIS)

Otake, Y.; Naito, T.; Shintake, T.; Takata, K.; Takeuchi, Y.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

1992-01-01

An S-band RF-gun using a laser-triggered photocathode and its low-power RF system have been constructed. The main elements of the low-power RF system comprise a 600-W amplifier, an amplitude modulator, a phase detector, a phase shifter and a frequency-divider module. Synchronization between the RF fields for acceleration and the mode-locked laser pulses for beam triggering are among the important points concerning the RF-gun. The frequency divider module which down-converts from 2856 MHz(RF) to 89.25 MHz(laser), and the electrical phase-shifter were specially developed for stable phase control. The phase jitter of the frequency divider should be less than 10 ps to satisfy our present requirements. The first experiments to trigger and accelerate beams with the above-mentioned system were carried out in January, 1992. (Author) 6 figs., 5 refs

Ultra High-Speed Radio Frequency Switch Based on Photonics.

Science.gov (United States)

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2008-01-01

An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

Development of a large proton accelerator for innovative researches; development of high power RF source

Energy Technology Data Exchange (ETDEWEB)

Chung, K. H.; Lee, K. O.; Shin, H. M.; Chung, I. Y. [KAPRA, Seoul (Korea); Kim, D. I. [Inha University, Incheon (Korea); Noh, S. J. [Dankook University, Seoul (Korea); Ko, S. K. [Ulsan University, Ulsan (Korea); Lee, H. J. [Cheju National University, Cheju (Korea); Choi, W. H. [Korea Advanced Institute of Science and Technology, Taejeon (Korea)

2002-05-01

This study was performed with objective to design and develop the KOMAC proton accelerator RF system. For the development of the high power RF source for CCDTL(coupled cavity drift tube linac), the medium power RF system using the UHF klystron for broadcasting was integrated and with this RF system we obtained the basic design data, operation experience and code-validity test data. Based on the medium power RF system experimental data, the high power RF system for CCDTL was designed and its performed was analyzed. 16 refs., 64 figs., 27 tabs. (Author)

Analysis of Passive RF-DC Power Rectification and Harvesting Wireless RF Energy for Micro-watt Sensors

Directory of Open Access Journals (Sweden)

Antwi Nimo

2015-04-01

Full Text Available In this paper, analytical modeling of passive rectifying circuits and the harvesting of electromagnetic (EM power from intentionally generated as well as from ubiquitous sources are presented. The presented model is based on the linearization of rectifying circuits. The model provides an accurate method of determining the output characteristics of rectifying circuits. The model was verified with Advance Design System (ADS Harmonic balance (HB simulations and measurements. The results from the presented model were in agreement with simulations and measurements. Consequently design considerations and trade-off of radio frequency (RF harvesters are discussed. To verify the exploitation of ambient RF power sources for operation of sensors, a dual-band antenna with a size of ~λ/4 at 900MHz and a passive dual-band rectifier that is able to power a commercial Thermo-Hygrometer requiring ~1.3V and 0.5MΩ from a global system for mobile communications (GSM base station is demonstrated. The RF power delivered by the receiving dual-band antenna at a distance of about 110 m from the GSM base station ranges from -27 dBm to -50 dBm from the various GSM frequency bands. Additionally, wireless range measurements of the RF harvesters in the industrial, scientific and medical (ISM band 868MHz is presented at indoor conditions.

Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

Energy Technology Data Exchange (ETDEWEB)

Peng, Shou [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yao, Tingting, E-mail: yaott0815@163.com [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China); Yang, Yong; Zhang, Kuanxiang; Jiang, Jiwen; Jin, Kewu; Li, Gang; Cao, Xin; Xu, Genbao; Wang, Yun [State Key Laboratory of Advanced Technology for Float Glass, Bengbu 233018 (China); Bengbu Design & Research Institute for Glass Industry, Bengbu 233018 (China)

2016-12-15

Ga-doped zinc oxide (GZO) thin films were deposited by closed field unbalanced DC coupled RF magnetron sputtering system at room temperature. The RF sputtering power ratio was adjusted from 0% to 100%. The crystal structure, surface morphology, transmittance and electrical resistivity of GZO films mainly influenced by RF sputtering power ratio were investigated by X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect measurement. The research results indicate that the increasing RF power ratio can effectively reduce the discharge voltage of system and increase the ionizing rate of particles. Meanwhile, the higher RF power ratio can increase the carrier mobility in GZO thin film and improve the optical and electrical properties of GZO thin film significantly. Within the optimal discharge voltage window, the film deposits at 80% RF power ratio exhibits the lowest resistivity of 2.6×10{sup −4} Ω cm. We obtain the GZO film with the best average optical transmittance is approximately 84% in the visible wavelength. With the increasing RF power ratio, the densification of GZO film is enhanced. The densification of GZO film is decrease when the RF power ratio is 100%.

Design and manufacture of the RF power supply and RF transmission line for SANAEM project Prometheus

Science.gov (United States)

Turemen, G.; Ogur, S.; Ahiska, F.; Yasatekin, B.; Cicek, E.; Ozbey, A.; Kilic, I.; Unel, G.; Alacakir, A.

2017-08-01

A 1-5 MeV proton beamline is being built by the Turkish Atomic Energy Authority in collaboration with a number of graduate students from different universities. The primary goal of the project, is to acquire the design ability and manufacturing capability of all the components locally. SPP will be an accelerator and beam diagnostics test facility and it will also serve the detector development community with its low beam current. This paper discusses the design and construction of the RF power supply and the RF transmission line components such as its waveguide converters and its circulator. Additionally low and high power RF test results are presented to compare the performances of the locally produced components to the commercially available ones.

RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

International Nuclear Information System (INIS)

Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

2009-01-01

Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

Lasers for switched-power linacs

International Nuclear Information System (INIS)

Bigio, I.J.

1988-01-01

Laser-switched power surges for particle accelerators, just as with direct laser-driven accelerator schemes, place unique demands on the specifications of the invoked laser systems. We review the laser requirements for switched power sources of the types described in other chapters of this volume. The relative advantages and disadvantages of selected lasers are listed, and the appropriateness and scalability of existing technology is discussed. 4 refs., 2 figs., 2 tabs

Manufacture of Radio Frequency Micromachined Switches with Annealing

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2014-01-01

Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of radio frequency micromachined switches with annealing.

Science.gov (United States)

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Fast switching wideband rectifying circuit for future RF energy harvesting

Science.gov (United States)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

High-power rf controls for the NBS-Los Alamos racetrack microtron

International Nuclear Information System (INIS)

Young, L.M.; Biddle, R.S.

1985-01-01

The high-power rf system for the National Bureau of Standards (NBS)-Los Alamos racetrack microtron (RTM) uses waveguide power splitters and waveguide phase shifters to distribute rf power from a single 500-kW cw klystron to four side-coupled accelerating structures. The amplitude and phase of each structure is controlled by a feedback system that uses the waveguide variable power splitters, waveguide phase shifters, and klystron drive as the active control elements. A block diagram of this system is shown, as is a subset of the complete system on which the measurements reported in this paper were performed. The feedback controls on the capture section use low-level rf amplitude and phase controls on the rf drive to the klystron. These controls are very fast with an open loop gain bandwidth of approximately 40 kHz. The feedback loop is identical to the feedback loop used in the chopper/buncher system described in another paper at this conference. 4 refs., 8 figs

HIGH POWER TESTS OF A MULTIMODE X-BAND RF DISTRIBUTION SYSTEMS

International Nuclear Information System (INIS)

Tantawi, S

2004-01-01

We present a multimode X-band rf pulse compression system suitable for the Next Linear Collider (NLC). The NLC main linacs operate at 11.424 GHz. A single NLC rf unit is required which produce 400 ns pulses with 600 MW of peak power. Each rf unit should power approximately 5 meters of accelerator structures. These rf units consist of two 75 MW klystrons and a dual-moded resonant delay line pulse compression system [1] that produce a flat output pulse. The pulse compression system components are all over moded and most components are design to operate with two modes at the same time. This approach allows increasing the power handling capabilities of the system while maintain a compact inexpensive system. We detail the design of this system and present experimental cold test results. The high power testing of the system is verified using four 50-MW solenoid focused klystrons. These Klystrons should be able to push the system beyond NLC requirements

Novel rf power sensor based on capacitive MEMS technology

NARCIS (Netherlands)

Fernandez, L.J.; Visser, Eelke; Sesé, J.; Jansen, Henricus V.; Wiegerink, Remco J.; Flokstra, Jakob

2003-01-01

We present the theory, design, fabrication of and first measurements on a novel power for radio frequency (rf) signals, based on capacitive measurements. The novelty of this sensor is thtat it measures the force that is created between the rf signal and a grounded membrande suspended above the line

Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

International Nuclear Information System (INIS)

Hsu Cheng-Shing; Huang Cheng-Liang

2001-01-01

Physical properties of rf-sputtered crystalline (Zr 0.8 Sn 0.2 )TiO 4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400degC, 450degC). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450degC. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450degC, a leakage current of 7.2x10 -11 A was obtained at 1 V. (author)

High-power semiconductor RSD-based switch

Energy Technology Data Exchange (ETDEWEB)

Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

1997-12-31

The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

Reliability-cost models for the power switching devices of wind power converters

DEFF Research Database (Denmark)

Ma, Ke; Blaabjerg, Frede

2012-01-01

In order to satisfy the growing reliability requirements for the wind power converters with more cost-effective solution, the target of this paper is to establish a new reliability-cost model which can connect the relationship between reliability performances and corresponding semiconductor cost...... temperature mean value Tm and fluctuation amplitude ΔTj of power devices, are presented. With the proposed reliability-cost model, it is possible to enable future reliability-oriented design of the power switching devices for wind power converters, and also an evaluation benchmark for different wind power...... for power switching devices. First the conduction loss, switching loss as well as thermal impedance models of power switching devices (IGBT module) are related to the semiconductor chip number information respectively. Afterwards simplified analytical solutions, which can directly extract the junction...

Power gating of VLSI circuits using MEMS switches in low power applications

KAUST Repository

Shobak, Hosam; Ghoneim, Mohamed T.; El Boghdady, Nawal; Halawa, Sarah; Iskander, Sophinese M.; Anis, Mohab H.

2011-01-01

-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result

Coating power RF components with TiN

International Nuclear Information System (INIS)

Kuchnir, M.; Hahn, E.

1995-03-01

A facility for coating RF power components with thin films of Ti and/or TiN has been in operation for some time at Fermilab supporting the Accelerator Division RF development work and the TESLA program. It has been experimentally verified that such coatings improve the performance of these components as far as withstanding higher electric fields. This is attributed to a reduction in the secondary electron emission coefficient of the surfaces when coated with a thin film containing titanium. The purpose of this Technical Memorandum is to describe the facility and the procedure used

Effect on antenna structure of high power rf during plasma operation

International Nuclear Information System (INIS)

Haste, G.R.; Thomas, C.E.; Fadnek, A.; Carter, M.D.; Beaumont, B.; Becoulet, A.; Kuus, H.; Saoutic, B.

1993-01-01

High-power, long-pulse operation on the Tore Supra tokamak results in considerable stress on the plasma-facing components. The ICH antennas must deliver high-power rf(up to 4 MW per antenna) in this environment. The antenna structure is therefore subjected to the power flux resulting from the interaction between rf and the edge plasma. The structure's response during operation is described, as is the condition of the antenna after prolonged use

A capacitive rf power sensor based on mems technology

NARCIS (Netherlands)

Fernandez, L.J.

2005-01-01

Existing power sensors for RF signals are based on thermistors, diodes and thermocouples. These power sensors are used as terminating devices and therefore they dissipate the complete incoming signal. Furthermore, new telecommunication systems require low weight, volume and power consumption and a

X-band RF power sources for accelerator applications

International Nuclear Information System (INIS)

Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

2011-01-01

The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

Science.gov (United States)

Keyrouz, Shady; Visser, Huib

2013-12-01

This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of -10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%.

Efficient Direct-Matching Rectenna Design for RF Power Transfer Applications

International Nuclear Information System (INIS)

Keyrouz, Shady; Visser, Huib

2013-01-01

This paper presents the design, simulation, fabrication and measurements of a 50 ohm rectenna system. The paper investigates each part (in terms of input impedance) of the rectenna system starting from the antenna, followed by the matching network, to the rectifier. The system consists of an antenna, which captures the transmitted RF signal, connected to a rectifier which converts the AC captured signal into a DC power signal. For maximum power transfer, a matching network is designed between the rectifier and the antenna. At an input power level of −10 dBm, the system is able to achieve an RF/DC power conversion efficiency of 49.7%

Look at energy compression as an assist for high power rf production

International Nuclear Information System (INIS)

Birx, D.L.; Farkas, Z.D.; Wilson, P.B.

1984-01-01

The desire to construct electron linacs of higher and higher energies, coupled with the realities of available funding and real estate, has forced machine designers to reassess the limitations in both accelerator gradient (MeV/m) and energy. The gradients achieved in current radio-frequency (RF) linacs are sometimes set by electrical breakdown in the accelerating structure, but are in most cases determined by the RF power level available to drive the linac. In this paper we will not discuss RF power sources in general, but rather take a brief look at several energy compression schemes which might be of service in helping to make better use of the sources we employ. We will, however, diverge for a bit and discuss what the RF power requirements are. 12 references, 21 figures, 3 tables

TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

2009-01-01

This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... experimentally with a 9.6-dB peak-to-average 50-kHz 16 quadrature amplitude modulation TEDS carrier, the setup providing 44-dBm (25 W) average RF output power at 400 MHz with 44% dc-to-RF efficiency state-of-the-art ACPR of less than ${-}$67 dBc, switching noise artifacts around ${-}$ 85 dBc, and an overall rms...

Development of an S-band high-power pillbox-type RF window

International Nuclear Information System (INIS)

Miura, A.; Matsumoto, H.

1992-01-01

We report on the development of RF windows used to handle a high transmission power up to 110 MW for the Japan Linear Collider. A detailed simulation on multipactoring has been carried out. The results were compared with cathode-luminescence on the surface of alumina RF windows experimentally observed with power transmission up to 200 MW. (Author) 10 refs., 9 figs

The effect of phase difference between powered electrodes on RF plasmas

International Nuclear Information System (INIS)

Proschek, M; Yin, Y; Charles, C; Aanesland, A; McKenzie, D R; Bilek, M M; Boswell, R W

2005-01-01

This paper presents the results of measurements carried out on plasmas created in five different RF discharge systems. These systems all have two separately powered RF (13.56 MHz) electrodes, but differ in overall size and in the geometry of both vacuum chambers and RF electrodes or antennae. The two power supplies were synchronized with a phase-shift controller. We investigated the influence of the phase difference between the two RF electrodes on plasma parameters and compared the different system geometries. Single Langmuir probes were used to measure the plasma parameters in a region between the electrodes. Floating potential and ion density were affected by the phase difference and we found a strong influence of the system geometry on the observed phase difference dependence. Both ion density and floating potential curves show asymmetries around maxima and minima. These asymmetries can be explained by a phase dependence of the time evolution of the electrode-wall coupling within an RF-cycle resulting from the asymmetric system geometry

RF Energy Compressor

International Nuclear Information System (INIS)

Farkas, Z.D.

1980-02-01

The RF Energy Compressor, REC described here, transforms cw rf into periodic pulses using an energy storage cavity, ESC, whose charging is controlled by 180 0 bi-phase modulation, PSK, and external Q switching, βs. Compression efficiency, C/sub e/, of 100% can be approached at any compression factor C/sub f/

Outage Analysis of Cooperative Transmission with Energy Harvesting Relay: Time Switching versus Power Splitting

Directory of Open Access Journals (Sweden)

Guanyao Du

2015-01-01

Full Text Available This paper investigates the multiuser transmission network with an energy harvesting (EH cooperative relay, where a source transmits independent information to multiple destinations with the help of an energy constrained relay. The relay can harvest energy from the radio frequency (RF signals transmitted from the source, and it helps the multiuser transmission only by consuming the harvested energy. By adopting the time switching and the power splitting relay receiver architectures, we firstly propose two protocols, the time switching cooperative multiuser transmission (TSCMT protocol and the power splitting cooperative multiuser transmission (PSCMT protocol, to enable the simultaneous information processing and EH at the relay for the system. To evaluate the system performance, we theoretically analyze the system outage probability for the two proposed protocols and then derive explicit expressions for each of them, respectively. Numerical results are provided to demonstrate the accuracy of our analytical results and reveal that compared with traditional noncooperative scheme our proposed protocols are green solutions to offer reliable communication and lower system outage probability without consuming additional energy. In particular, for the same transmit power at the source, the PSCMT protocol is superior to the TSCMT protocol to obtain lower system outage probability.

An RF energy harvesting power management circuit for appropriate duty-cycled operation

Science.gov (United States)

Shirane, Atsushi; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

2015-04-01

In this study, we present an RF energy harvesting power management unit (PMU) for battery-less wireless sensor devices (WSDs). The proposed PMU realizes a duty-cycled operation that is divided into the energy charging time and discharging time. The proposed PMU detects two types of timing, thus, the appropriate timing for the activation can be recognized. The activation of WSDs at the proper timing leads to energy efficient operation and stable wireless communication. The proposed PMU includes a hysteresis comparator (H-CMP) and an RF signal detector (RF-SD) to detect the timings. The proposed RF-SD can operate without the degradation of charge efficiency by reusing the RF energy harvester (RF-EH) and H-CMP. The PMU fabricated in a 180 nm Si CMOS demonstrated the charge operation using the RF signal at 915 MHz and the two types of timing detection with less than 124 nW in the charge phase. Furthermore, in the active phase, the PMU generates a 0.5 V regulated power supply from the charged energy.

Study of solar array switching power management technology for space power system

Science.gov (United States)

Cassinelli, J. E.

1982-01-01

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts which could satisfy the mission requirements were identified. The switching concepts were compared with a conventional buck regulator system for cost, weight and volume, reliability, efficiency and thermal control. Solar array switching provided significant advantages in all areas of comparison for the reviewed missions.

A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications.

Science.gov (United States)

Pizzotti, Matteo; Perilli, Luca; Del Prete, Massimo; Fabbri, Davide; Canegallo, Roberto; Dini, Michele; Masotti, Diego; Costanzo, Alessandra; Franchi Scarselli, Eleonora; Romani, Aldo

2017-07-28

We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to -17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc.) are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna) and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT). A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

A Long-Distance RF-Powered Sensor Node with Adaptive Power Management for IoT Applications

Directory of Open Access Journals (Sweden)

Matteo Pizzotti

2017-07-01

Full Text Available We present a self-sustained battery-less multi-sensor platform with RF harvesting capability down to −17 dBm and implementing a standard DASH7 wireless communication interface. The node operates at distances up to 17 m from a 2 W UHF carrier. RF power transfer allows operation when common energy scavenging sources (e.g., sun, heat, etc. are not available, while the DASH7 communication protocol makes it fully compatible with a standard IoT infrastructure. An optimized energy-harvesting module has been designed, including a rectifying antenna (rectenna and an integrated nano-power DC/DC converter performing maximum-power-point-tracking (MPPT. A nonlinear/electromagnetic co-design procedure is adopted to design the rectenna, which is optimized to operate at ultra-low power levels. An ultra-low power microcontroller controls on-board sensors and wireless protocol, to adapt the power consumption to the available detected power by changing wake-up policies. As a result, adaptive behavior can be observed in the designed platform, to the extent that the transmission data rate is dynamically determined by RF power. Among the novel features of the system, we highlight the use of nano-power energy harvesting, the implementation of specific hardware/software wake-up policies, optimized algorithms for best sampling rate implementation, and adaptive behavior by the node based on the power received.

Fast-opening vacuum switches for high-power inductive energy storage

International Nuclear Information System (INIS)

Cooperstein, G.

1988-01-01

The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

Fast and low power Michelson interferometer thermo-optical switch on SOI.

Science.gov (United States)

Song, Junfeng; Fang, Q; Tao, S H; Liow, T Y; Yu, M B; Lo, G Q; Kwong, D L

2008-09-29

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.

A Simulator of Periodically Switching Channels for Power Line Communications

Science.gov (United States)

Hayasaki, Taro; Umehara, Daisuke; Denno, Satoshi; Morikura, Masahiro

An indoor power line is one of the most attractive media for in-home networks. However, there are many technical problems for achieving in-home power line communication (PLC) with high rate and high reliability. One of such problem is the degradation in the performance of the in-home PLC caused by periodically time-varying channel responses, particularly when connecting the switching power supply equipment. We present a measurement method for power line channel responses and reveal the switching of the channel responses synchronized with power-frequency voltage when connecting switching power supply equipment in sending or receiving outlets. In this paper, we term them periodically switching channel responses. The performance of PLC adapters is seriously affected by the periodically switching channel responses. Therefore, we provide a modeling of the periodically switching channel responses by using finite impulse response (FIR) filters with a shared channel memory and construct a simulator for in-home power line channels including the periodically switching channel responses in order to evaluate the various communication systems through the power line. We present the validity of the proposed simulator through the performance evaluation of OFDM/64QAM over periodically switching channels with additive white Gaussian noise. Furthermore, we evaluate the influence of the periodically switching channel responses on the communication quality of a time-invariant modulation scheme by using the proposed simulator.

Liquid Metal Droplet and Micro Corrugated Diaphragm RF-MEMS for reconfigurable RF filters

Science.gov (United States)

Irshad, Wasim

Widely Tunable RF Filters that are small, cost-effective and offer ultra low power consumption are extremely desirable. Indeed, such filters would allow drastic simplification of RF front-ends in countless applications from cell phones to satellites in space by replacing switched-array of static acoustic filters and YIG filters respectively. Switched array of acoustic filters are de facto means of channel selection in mobile applications such as cell phones. SAW and BAW filters satisfy most criteria needed by mobile applications such as low cost, size and power consumption. However, the trade-off is a significant loss of 3-4 dB in modern cell phone RF front-end. This leads to need for power-hungry amplifiers and short battery life. It is a necessary trade-off since there are no better alternatives. These devices are in mm scale and consume mW. YIG filters dominate applications where size or power is not a constraint but demand excellent RF performance like low loss and high tuning ratio. These devices are measured in inches and require several watts to operate. Clearly, a tunable RF filter technology that would combine the cost, size and power consumption benefits of acoustic filters with excellent RF performance of YIG filters would be extremely desirable and imminently useful. The objective of this dissertation is to develop such a technology based upon RF-MEMS Evanescent-mode cavity filter. Two highly novel RF-MEMS devices have been developed over the course of this PhD to address the unique MEMS needs of this technology. The first part of the dissertation is dedicated to introducing the fundamental concepts of tunable cavity resonators and filters. This includes the physics behind it, key performance metrics and what they depend on and requirements of the MEMS tuners. Initial gap control and MEMS attachment method are identified as potential hurdles towards achieving very high RF performance. Simple and elegant solutions to both these issues are discussed in

Manufacture of Radio Frequency Micromachined Switches with Annealing

OpenAIRE

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

A new switched power linac structure

International Nuclear Information System (INIS)

Villa, F.

1989-03-01

A new pulse power structure has been described that utilizes an easily accessible rectilinear switch. The new structure is more ''forgiving'' (as far as risetime is concerned) than the radial line transformer, and contains fewer switching structures/unit length. The combination of the new structure with the switch proposed seems to offer interesting possibilities for a future linear collider. 13 refs., 6 figs., 2 tabs

Performance of the Crowbar of the LHC High Power RF System

CERN Document Server

Ravidà, G; Valuch, D

2012-01-01

The counter-rotating proton beams in the Large Hadron Collider (LHC) are captured and accelerated to their final energies by two identical 400 MHz Radio Frequency (RF) systems. The RF power source required for each beam comprises eight 300 kW klystrons. The output power of each klystron is fed via a circulator and a waveguide line to the input coupler of a single-cell superconducting (SC) cavity. Each unit of four klystrons is powered by a -100kV/40A AC/DC power converter. A fast protection system (crowbar) protects the four klystrons in each of these units. Although the LHC RF system has shown has very good performance, operational experience has shown that the five-gap double-ended thyratrons used in the crowbar system suffer, from time to time, from auto-firing, which result in beam dumps. This paper presents the recent results obtained with an alternative solution based on solid state thyristors. Comparative measurements with the thyratron are shown.

Power gating of VLSI circuits using MEMS switches in low power applications

KAUST Repository

Shobak, Hosam

2011-12-01

Power dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods. © 2011 IEEE.

New high power 200 MHz RF system for the LANSCE drift tube linac

International Nuclear Information System (INIS)

Lyles, J.; Friedrichs, C.; Lynch, M.

1998-01-01

The Los Alamos Neutron Science Center (LANSCE) linac provides an 800 MeV direct H + proton beam, and injects H - to the upgraded proton storage ring for charge accumulation for the Short Pulse Spallation Source. Accelerating these interlaced beams requires high average power from the 201.25 MHz drift tube linac (DTL) RF system. Three power amplifiers have operated at up to three Megawatts with 12% duty factor. The total number of electron power tubes in the RF amplifiers and their modulators has been reduced from fifty-two to twenty-four. The plant continues to utilize the original design of a tetrode driving a super power triode. Further increases in the linac duty factor are limited, in part, by the maximum dissipation ratings of the triodes. A description of the system modifications proposed to overcome these limitations includes new power amplifiers using low-level RF modulation for tank field control. The first high power Diacrode reg-sign is being delivered and a new amplifier cavity is being designed. With only eight power tubes, the new system will deliver both peak power and high duty factor, with lower mains power and cooling requirements. The remaining components needed for the new RF system will be discussed

Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

KAUST Repository

Rakia, Tamer

2015-07-23

Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

Power Adaptation Based on Truncated Channel Inversion for Hybrid FSO/RF Transmission With Adaptive Combining

KAUST Repository

Rakia, Tamer; Hong-Chuan Yang; Gebali, Fayez; Alouini, Mohamed-Slim

2015-01-01

Hybrid free-space optical (FSO)/radio-frequency (RF) systems have emerged as a promising solution for high-data-rate wireless communications. In this paper, we consider power adaptation strategies based on truncated channel inversion for the hybrid FSO/RF system employing adaptive combining. Specifically, we adaptively set the RF link transmission power when FSO link quality is unacceptable to ensure constant combined signal-to-noise ratio (SNR) at the receiver. Two adaptation strategies are proposed. One strategy depends on the received RF SNR, whereas the other one depends on the combined SNR of both links. Analytical expressions for the outage probability of the hybrid system with and without power adaptation are obtained. Numerical examples show that the hybrid FSO/RF system with power adaptation achieves a considerable outage performance improvement over the conventional system.

Traveling wave linear accelerator with RF power flow outside of accelerating cavities

Science.gov (United States)

Dolgashev, Valery A.

2016-06-28

A high power RF traveling wave accelerator structure includes a symmetric RF feed, an input matching cell coupled to the symmetric RF feed, a sequence of regular accelerating cavities coupled to the input matching cell at an input beam pipe end of the sequence, one or more waveguides parallel to and coupled to the sequence of regular accelerating cavities, an output matching cell coupled to the sequence of regular accelerating cavities at an output beam pipe end of the sequence, and output waveguide circuit or RF loads coupled to the output matching cell. Each of the regular accelerating cavities has a nose cone that cuts off field propagating into the beam pipe and therefore all power flows in a traveling wave along the structure in the waveguide.

Switching power converters medium and high power

CERN Document Server

Neacsu, Dorin O

2013-01-01

An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

Neutron and gamma irradiation effects on power semiconductor switches

International Nuclear Information System (INIS)

Schwarze, G.E.; Frasca, A.J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

Results of the SLAC LCLS Gun High-Power RF Tests

International Nuclear Information System (INIS)

Dowell, D.H.; Jongewaard, E.; Limborg-Deprey, C.; Schmerge, J.F.; Li, Z.; Xiao, L.; Wang, J.; Lewandowski, J.; Vlieks, A.

2007-01-01

The beam quality and operational requirements for the Linac Coherent Light Source (LCLS) currently being constructed at SLAC are exceptional, requiring the design of a new RF photocathode gun for the electron source. Based on operational experience at SLAC's GTF and SDL and ATF at BNL as well as other laboratories, the 1.6cell s-band (2856MHz) gun was chosen to be the best electron source for the LCLS, however a significant redesign was necessary to achieve the challenging parameters. Detailed 3-D analysis and design was used to produce near-perfect rotationally symmetric rf fields to achieve the emittance requirement. In addition, the thermo-mechanical design allows the gun to operate at 120Hz and a 140MV/m cathode field, or to an average power dissipation of 4kW. Both average and pulsed heating issues are addressed in the LCLS gun design. The first LCLS gun is now fabricated and has been operated with high-power RF. The results of these high-power tests are presented and discussed

Development of a high-power RF cavity for the PEP-II B factory

International Nuclear Information System (INIS)

Rimmer, R.A.; Allen, M.A.; Saba, J.; Schwarz, H.

1995-03-01

The authors describe the development and fabrication of the first high-power RF cavity for PEP-II. Design choices and fabrication technologies for the first cavity and subsequent production cavities are described. Conditioning and high-power testing of the first and subsequent cavities are discussed, as well as integration of the cavity into modular RF systems for both high-energy and low-energy rings. Plans for installation of the cavity raft assemblies in the RF sections of the PEP tunnel are also considered

Performance test of lower hybrid waveguide under long/high-RF power transmission

International Nuclear Information System (INIS)

Seki, Masami; Obara, Kenjiro; Maebara, Sunao

1996-06-01

Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10 -6 -10 -5 Pa m 3 /sec m 2 (10 -9 -10 -8 Torr 1/sec cm 2 ) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H 2 or D 2 gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be ∼100degC by using of water cooling at a power level of 150 MW/m 2 RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10 -7 Pa m 3 /sec m 2 (10 -10 Torr 1/sec cm 2 ). The steady state RF injection was demonstrated with water cooling. (author)

Silicon Micromachining in RF and Photonic Applications

Science.gov (United States)

Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

1995-01-01

Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

Repetitive plasma opening switch for powerful high-voltage pulse generators

International Nuclear Information System (INIS)

Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

1998-01-01

Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

DEFF Research Database (Denmark)

Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

2007-01-01

due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

Modeling and design techniques for RF power amplifiers

CERN Document Server

Raghavan, Arvind; Laskar, Joy

2008-01-01

The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

Development and simulation of RF components for high power millimeter wave gyrotrons

Energy Technology Data Exchange (ETDEWEB)

Pereyaslavets, M.; Sato, M.; Shimozuma, T.; Takita, Y.; Idei, H.; Kubo, S.; Ohkubo, K.; Hayashi, K.

1996-11-01

To test gyrotron RF components, efficient low-power generators for rotating high-order modes of high purity are necessary. Designs of generators for the TE{sub 15,3} mode at 84 GHz and for the TE{sub 31,8} mode at 168 GHz are presented and some preliminary test results are discussed. In addition, Toshiba gyrotron cavities at 168 GHz were analyzed for leakage of RF power in the beam tunnel. To decrease RF power leakage, the declination angle of the cut-off cavity cross section has to be decreased. A TE{sub 15,3} waveguide nonlinear uptaper is analyzed at 84 GHz as well as 168 GHz uptapers. Since the calculated conversion losses are slightly higher than designed value, an optimization of those uptapers may be required. (author)

Switching overvoltages in offshore wind power grids

DEFF Research Database (Denmark)

Arana Aristi, Ivan

and cables are presented. In Chapter 4 results from time domain measurements and simulations of switching operations in offshore wind power grids are described. Specifically, switching operations on a single wind turbine, the collection grid, the export system and the external grid measured in several real...... offshore wind farms are shown together with simulation results. Switching operations in offshore wind power grids can be simulated with different electromagnetic transient programs. Different programs were used in the project and compared results are included in Chapter 4. Also in Chapter 4 different......Switching transients in wind turbines, the collection grid, the export system and the external grid in offshore wind farms, during normal or abnormal operation, are the most important phenomena when conducting insulation coordination studies. However, the recommended models and methods from...

Evaluation of a new method of RF power coupling to acceleration cavity of charged particles accelerators

Directory of Open Access Journals (Sweden)

A M Poursaleh

2017-08-01

Full Text Available In this paper, the feasibility studty of a new method of RF power coupling to acceleration cavity of charged particles accelerator will be evaluated. In this method a slit is created around the accelerator cavity, and RF power amplifier modules is connected directly to the acceleration cavity. In fact, in this design, the cavity in addition to acting as an acceleration cavity, acts as a RF power combiner. The benefits of this method are avoiding the use of RF vacuum tubes, transmission lines, high power combiner and coupler. In this research, cylindrical and coaxial cavities were studied, and a small sample coaxial cavity is build by this method. The results of the resarch showed that compact, economical and safe RF accelerators can be achieved by the proposed method

Outgassing studies of lower hybrid antenna module during CW high RF power injection

International Nuclear Information System (INIS)

Goniche, M.; Brossaud, J.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.; Maebara, S.; Ikeda, Y.; Imai, T.; Nagashima, T.

1994-01-01

Outgassing, induced by very long RF waves injection (up to 6000s) at high power density, is studied with a module, able to be used for a lower hybrid frequency antenna. A large outgassing data base is provided by 75 shots cumulating 27 hours of RF injection. Outgassing rate is documented after different thermal pre-treatments, and in various conditions of cooling, RF power level. Relevant parameters are identified and values of outgassing rates are given in order to design pumping system for a large antenna. (author) 4 refs.; 7 figs.; 1 tab

Interplay of the influence of oxygen partial pressure and rf power on ...

Indian Academy of Sciences (India)

2017-07-25

Jul 25, 2017 ... extra heating) and low pressure p = 0.5 mTorr, varying the rf power density between P = 0.57 and 2.83 W cm−2 at different relative oxygen ... thin films are used as window layers in solar cells [1–3]. Sput- tering (especially rf ... defect density [11,12]. In the literature there are works reporting the effect of rf.

Performance test of lower hybrid waveguide under long/high-RF power transmission

Energy Technology Data Exchange (ETDEWEB)

Seki, Masami; Obara, Kenjiro; Maebara, Sunao [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

1996-06-01

Performance tests of a module for lower hybrid waveguides were carried out at the CEA Cadarache RF Test Facility. For the experiments the test module was fabricated by JAERI, the transmission line of the test bed was modified and the connection waveguides were manufactured by CEA. As the results, the thermal treatment by baking at a higher temperature was the most effective for reducing outgassing during injection of high RF power. The outgassing strongly depended on the temperature of the test module, but was independent to initial temperature. The RF injection reduced outgassing. The outgassing rate decreased to a low level of 10{sup -6}-10{sup -5} Pa m{sup 3}/sec m{sup 2} (10{sup -9}-10{sup -8} Torr 1/sec cm{sup 2}) at 400degC after 450degC-baking. The gas injection did not affect outgassing before and during RF injection. The baking under H{sub 2} or D{sub 2} gas atmosphere were not so effective for reducing outgassing rate. The outgassing rate did not depend on input RF power densities. The temperature in central part of the test module saturated to be {approx}100degC by using of water cooling at a power level of 150 MW/m{sup 2} RF injection, and a neutral gas pressure decreased gradually. In the water cooling case, the outgassing rate was very low less than 10{sup -7} Pa m{sup 3}/sec m{sup 2} (10{sup -10} Torr 1/sec cm{sup 2}). The steady state RF injection was demonstrated with water cooling. (author).

High voltage superconducting switch for power application

International Nuclear Information System (INIS)

Mawardi, O.; Ferendeci, A.; Gattozzi, A.

1983-01-01

This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

RF transport

International Nuclear Information System (INIS)

Choroba, Stefan

2013-01-01

This paper deals with the techniques of transport of high-power radiofrequency (RF) power from a RF power source to the cavities of an accelerator. Since the theory of electromagnetic waves in waveguides and of waveguide components is very well explained in a number of excellent text books it will limit itself on special waveguide distributions and on a number of, although not complete list of, special problems which sometimes occur in RF power transportation systems. (author)

Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

NARCIS (Netherlands)

Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

2002-01-01

This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

High-power, solid-state rf source for accelerator cavities

International Nuclear Information System (INIS)

Vaughan, D.R.; Mols, G.E.; Reid, D.W.; Potter, J.M.

1985-01-01

During the past few years the Defense and Electronics Center of Westinghouse Electric Corporation has developed a solid-state, 250-kW peak, rf amplifier for use with the SPS-40 radar system. This system has a pulse length of 60 μs and operates across the frequency band from 400 to 450 MHz. Because of the potential use of such a system as an rf source for accelerator applications, a collaborative experiment was initiated between Los Alamos National Laboratory and Westinghouse to simulate the resonant load conditions of an accelerator cavity. This paper describes the positive results of that experiment as well as the solid-state amplifier architecture. It also explores the future of high-power, solid-state amplifiers as rf sources for accelerator structures

LCLS-II high power RF system overview and progress

Energy Technology Data Exchange (ETDEWEB)

Yeremian, Anahid Dian

2015-10-07

A second X-ray free electron laser facility, LCLS-II, will be constructed at SLAC. LCLS-II is based on a 1.3 GHz, 4 GeV, continuous-wave (CW) superconducting linear accelerator, to be installed in the first kilometer of the SLAC tunnel. Multiple types of high power RF (HPRF) sources will be used to power different systems on LCLS-II. The main 1.3 GHz linac will be powered by 280 1.3 GHz, 3.8 kW solid state amplifier (SSA) sources. The normal conducting buncher in the injector will use four more SSAs identical to the linac SSAs but run at 2 kW. Two 185.7 MHz, 60 kW sources will power the photocathode dual-feed RF gun. A third harmonic linac section, included for linearizing the bunch energy spread before the first bunch compressor, will require sixteen 3.9 GHz sources at about 1 kW CW. A description and an update on all the HPRF sources of LCLS-II and their implementation is the subject of this paper.

High power tests of dressed supconducting 1.3 GHz RF cavities

Energy Technology Data Exchange (ETDEWEB)

Hocker, A.; Harms, E.R.; Lunin, A.; Sukhanov, A.; /Fermilab

2011-03-01

A single-cavity test cryostat is used to conduct pulsed high power RF tests of superconducting 1.3 GHz RF cavities at 2 K. The cavities under test are welded inside individual helium vessels and are outfitted ('dressed') with a fundamental power coupler, higher-order mode couplers, magnetic shielding, a blade tuner, and piezoelectric tuners. The cavity performance is evaluated in terms of accelerating gradient, unloaded quality factor, and field emission, and the functionality of the auxiliary components is verified. Test results from the first set of dressed cavities are presented here.

High-power RF cavity R ampersand D for the PEP-II B Factory

International Nuclear Information System (INIS)

Rimmer, R.; Lambertson, G.; Hodgson, J.

1994-06-01

We describe the development of a high-power test model of the 476 MHz RF cavity for the PEP-II B Factory. This cavity is designed to demonstrate the feasibility of a high-power design with higher-order mode (HOM) damping waveguides and the fabrication technologies involved, and it can also be used to evaluate aperture or loop couplers and various RF windows. Changes to the RF design to reduce peak surface heating are discussed and results of finite-element analyses of temperature and stress are presented. Fabrication methods for the prototype and subsequent production cavities are discussed

Neutron and gamma irradiation effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing, E-mail: hezhibing802@163.com

2016-03-15

Graphical abstract: - Highlights: • The growth mechanism of defects in GDP films was studied upon plasma diagnosis. • Increasing rf power enhanced the etching effects of smaller-mass species. • The “void” defect was caused by high energy hydrocarbons bombardment on the surface. • The surface roughness was only 12.76 nm, and no “void” defect was observed at 30 W. - Abstract: The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T{sub 2}B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no “void” defect was observed.

Multi-step capacitor discharges as an RF generator

International Nuclear Information System (INIS)

Hotta, Eiki; Yamamoto, Shunji; Ishii, Shozo; Hayashi, Izumi

1979-01-01

A variety of methods have been developed for large output radio frequency (RF) generators to heat and stabilize high temperature plasma. As the generators for this purpose, capacitor discharge, cable discharge, and oscillation with electronic tubes are considered. Here, a new RF generator is reported, which utilizes capacitor discharge to extract heavy current, and solves the difficulty of short duration by employing multistep discharges. The authors solved the problem of frequency decrease in capacitor discharge by cutting off the unnecessary capacitors reasonably from the load circuit, using the additional circuit for shunting current and vacuum gap switches. The vacuum gap switches and the trigger system are described together with the RF generator manufactured. The generator was fabricated to be rather compact for its large output and simple in circuitry as compared with conventional oscillator systems. The shortcomings are frequency variation and the improper phase of switching the next step in to cause instability, when the load change occurs. It would be difficult to operate the generator in a RF range of more than about 10 MHz due to jitter of the vacuum gap switches and others. (Wakatsuki, Y.)

Study on the RF power necessary to ignite plasma for the ICP test facility at HUST

Energy Technology Data Exchange (ETDEWEB)

Yue, Haikun [School of Electronic Information and Communications, Huazhong University of Science and Technology, Wuhan (China); State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China); Li, Dong; Wang, Chenre; Li, Xiaofei; Chen, Dezhi; Liu, Kaifeng; Zhou, Chi; Pan, Ruimin [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan (China)

2015-10-15

An Radio-Frequency (RF) Inductively Coupled Plasma (ICP) ion source test facility has been successfully developed at Huazhong University of Science and Technology (HUST). As part of a study on hydrogen plasma, the influence of three main operation parameters on the RF power necessary to ignite plasma was investigated. At 6 Pa, the RF power necessary to ignite plasma influenced little by the filament heating current from 5 A to 9 A. The RF power necessary to ignite plasma increased rapidly with the operation pressure decreasing from 8 Pa to 4 Pa. The RF power necessary to ignite plasma decreased with the number of coil turns from 6 to 10. During the experiments, plasma was produced with the electron density of the order of 10{sup 16}m{sup -3} and the electron temperature of around 4 eV. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fundamental mode rf power dissipated in a waveguide attached to an accelerating cavity

International Nuclear Information System (INIS)

Kang, Y.W.

1993-01-01

An accelerating RF cavity usually requires accessory devices such as a tuner, a coupler, and a damper to perform properly. Since a device is attached to the wall of the cavity to have certain electrical coupling of the cavity field through the opening. RF power dissipation is involved. In a high power accelerating cavity, the RF power coupled and dissipated in the opening and in the device must be estimated to design a proper cooling system for the device. The single cell cavities of the APS storage ring will use the same accessories. These cavities are rotationally symmetric and the fields around the equator can be approximated with the fields of the cylindrical pillbox cavity. In the following, the coupled and dissipated fundamental mode RF power in a waveguide attached to a pillbox cavity is discussed. The waveguide configurations are (1) aperture-coupled cylindrical waveguide with matched load termination; (2) short-circuited cylindrical waveguide; and (3) E-probe or H-loop coupled coaxial waveguide. A short-circuited, one-wavelength coaxial structure is considered for the fundamental frequency rejection circuit of an H-loop damper

An ultra-low-power RF transceiver for WBANs in medical applications

Energy Technology Data Exchange (ETDEWEB)

Zhang Qi; Wu Nanjian [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Kuang Xiaofei, E-mail: nanjian@semi.ac.cn [College of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018 (China)

2011-06-15

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 {mu}m CMOS process. Its core area is 1.6 mm{sup 2}. The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 {mu}A current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

An ultra-low-power RF transceiver for WBANs in medical applications

International Nuclear Information System (INIS)

Zhang Qi; Wu Nanjian; Kuang Xiaofei

2011-01-01

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks (WBANs) in medical applications is presented. The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs. The transceiver consists of a main receiver (RX) with an ultra-low-power free-running ring oscillator and a high speed main transmitter (TX) with fast lock-in PLL. A passive wake-up receiver (WuRx) for wake-up function with a high power conversion efficiency (PCE) CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power. The chip is implemented in a 0.18 μm CMOS process. Its core area is 1.6 mm 2 . The main RX achieves a sensitivity of -55 dBm at a 100 kbps OOK data rate while consuming just 210 μA current from the 1 V power supply. The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is -15 dBm and the PCE is more than 25%. (semiconductor integrated circuits)

State-of-the-art piezoelectric transformer-based switch mode power supplies

DEFF Research Database (Denmark)

Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

Inductorless switch mode power supplies based on piezoelectric transformers are used to replace conventional transformers in high power density switch mode power supplies. Even though piezoelectric-based converters exhibit a high d egree of nonlinearity, it is desirable to use piezoelectric transfo...... discusses power supplies with the trend evaluation of piezoelectric transformer-based converter topologies and control methods. The challenges of piezoelectric transformers regarding soft switching capability and nonlinearity are addressed. This paper can be used as a guideline f or choosing a proper...... topology of piezoelectric-based switch mode power supply and a control method for the required application....

Low-level rf system for the AGS Light Ion Program

International Nuclear Information System (INIS)

Kovarik, V.; Ahrens, L.; Barton, D.S.; Frankel, R.; Otis, A.; Pope, D.; Pritsker, M.; Raka, E.; Warkentien, R.

1987-01-01

The new low level rf system for the light ion acceleration program features direct digital control of a phase continuous rf synthesizer clocked by finite changes in the B field. The system, its operation and testing are described. The system covers the complete rf frequency range and switches over from single cavity acceleration to multiple cavity acceleration with no beam loss. It also switches from the programmed drive to the normal bootstrap system

Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

CERN Document Server

Broere, J; Gómez Martínez, Y; Rossi, M

2011-01-01

Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

Application of quasi-optical approach to construct RF power supply for TeV linear colliders

International Nuclear Information System (INIS)

Saldin, E.L.; Sarantsev, V.P.; Schneidmiller, E.A.; Ulyanov, Yu.N.; Yurkov, M.V.

1995-01-01

An idea to use a quasi-optical approach for constructing an RF power supply for TeV linear e + e - colliders is developed. The RF source of the proposed scheme is composed of a large number of low-power RF amplifiers commutated by quasi-optical elements. The RF power of this source is transmitted to the accelerating structure of the collider by means of quasi-optical waveguides and mirrors. Such an approach enables one not only to decrease the required peak RF power by several orders of magnitude with respect to the traditional approach based on standard klystron technique, but also to achieve the required level of reliability, as it is based on well-developed technology of serial microwave devices. To illustrate the proposed scheme, a conceptual project of 2x500 GeV X-band collider is considered. Accelerating structure of the collider is of the standard travelling wave type and the RF source is assumed to be composed of 0.7 MW klystrons. All equipment of such a collider is placed in a tunnel of 12x6 m 2 cross section. It is shown that such a collider may be constructed at the present level of accelerator technique. ((orig.))

A differential low-voltage high gain current-mode integrated RF receiver front-end

Energy Technology Data Exchange (ETDEWEB)

Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

2011-02-15

A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

Liquid Nitrogen Temperature Operation of a Switching Power Converter

Science.gov (United States)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power converter at liquid nitrogen temperature (LNT) is compared with room temperature operation. The power circuit as well as the control circuit of the converter, designed with commercially available components, were operated at LNT and resulted in a slight improvement in converter efficiency. The improvement in power MOSFET operation was offset by deteriorating performance of the output diode rectifier at LNT. Performance of the converter could be further improved at low temperatures by using only power MOSFET's as switches. The use of a resonant topology will further improve the circuit performance by reducing the switching noise and loss.

Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

CERN Document Server

Kerhervé, Eric

2015-01-01

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S. Jr.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

Overview on thermal and mechanical challenges of high power RF electronic packaging

NARCIS (Netherlands)

Yuan, C.A.; Kregting, R.; Driel, W. van; Gielen, A.W.J.; Xiao, A.; Zhang, G.Q.

2011-01-01

High Power RF electronics is one of the essential parts for wireless communication, including the personal communication, broadcasting, microwave radar, etc. Moreover, high efficient high power electronics has entered the ISM market, such as the power generator of microwave oven. Power electronics

Ambient RF energy scavenging: GSM and WLAN power density measurements

NARCIS (Netherlands)

Visser, H.J.; Reniers, A.C.F.; Theeuwes, J.A.C.

2009-01-01

To assess the feasibility of ambient RF energy scavenging, a survey of expected power density levels distant from GSM-900 and GSM-1800 base stations has been conducted and power density measurements have been performed in a WLAN environment. It appears that for distances ranging from 25 m to 100 m

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

International Nuclear Information System (INIS)

Iannacci, J; Tschoban, C

2017-01-01

RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  −10 dB to  −60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3–5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed. (paper)

Performance of RF power and phase control on JT-60 LHRF heating system

International Nuclear Information System (INIS)

Fujii, T.; Ikeda, Y.; Imai, T.; Honda, M.; Kiyono, K.; Maebara, S.; Saigusa, M.; Sakamoto, K.; Sawahata, M.; Seki, M.

1987-01-01

The performance of RF power and phase control on the JT-60 LHRFD heating system are presented. The JT-60 LHRF heating system has three units of huge RF source with a total output of 24 MW, each unit consisting of eight amplifier chains. A high power klystron generating 1 MW for 10 s at 2 GHz is used in each chain. Automatic gain control is employed to regulate the output power not only against gain fluctuations in the chain but also against the unstable plasma load without any output circulator for the klystron

Review of tearing mode stabilization by RF power in tokamaks

International Nuclear Information System (INIS)

Giruzzi, G.; Zabiego, M.; Zohm, H.

1999-01-01

Control of tearing modes by means of heating and current drive inside the magnetic islands is one of the most important applications of RF power in tokamak reactors. The theoretical basis of this concept is reviewed, focusing on aspects related to RF-plasma interaction. Applications to the stabilization of neoclassical tearing modes in ITER by Electron Cyclotron Current Drive are presented to illustrate the basic physical dependences. The most significant experimental results and prospects for future applications are also discussed

High power RF performance test of an improved SiC load

Energy Technology Data Exchange (ETDEWEB)

Hwang, W.H.; Kim, S.H.; Park, Y.J. [Pohang Accelerator Lab., Pohang Inst. of Sceince and Technology, Pohang (KR)] [and others

1998-11-01

Two prototypes of SiC loads sustaining a maximum peak power of 50 MW were fabricated by Nihon Koshuha Co. in Japan. The PAL conducted the high power RF performance tests of SiC loads to verify the operation characteristics for the application to the PLS Linac. The in-situ facility for the K 12 module was used for the test, which consists of a modulator and klystron system, waveguide network, vacuum and cooling system, and RF analyzing equipment. As the test results, no breakdown appeared up to 50 MW peak power of 1 {mu}s pulse width at a repetition rate of 50 Hz. However, as the peak power increased above 20 MW at 4 {mu}s with 10 Hz, the breakdown phenomena has been observed. Analysing the test results with the current operation power level of PLS Linac, it is confirmed that the SiC loads well satisfy the criteria of the PLS Linac operation. (author)

ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

International Nuclear Information System (INIS)

Nelson, Brian A.

2006-01-01

Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

Rf system modeling for the high average power FEL at CEBAF

International Nuclear Information System (INIS)

Merminga, L.; Fugitt, J.; Neil, G.; Simrock, S.

1995-01-01

High beam loading and energy recovery compounded by use of superconducting cavities, which requires tight control of microphonic noise, place stringent constraints on the linac rf system design of the proposed high average power FEL at CEBAF. Longitudinal dynamics imposes off-crest operation, which in turn implies a large tuning angle to minimize power requirements. Amplitude and phase stability requirements are consistent with demonstrated performance at CEBAF. A numerical model of the CEBAF rf control system is presented and the response of the system is examined under large parameter variations, microphonic noise, and beam current fluctuations. Studies of the transient behavior lead to a plausible startup and recovery scenario

The UK High Power RF Faraday Partnership Industrial, Academia, and Public Collaboration

International Nuclear Information System (INIS)

Phelps, A.D.R.; Carter, R.G.; Clunie, D.; Bowater, S.P.; Ellis, D.; Gamble, D.; Large, T.; Lucas, W.; Pettit, C.; Poole, M. W.; Smith, H.; Smith, P.W.; Wilcox, D.M.

2003-01-01

The High Power Radio Frequency (HPRF) Faraday Partnership is a UK technology forum for all users, designers, developers and researchers of RF and microwave devices and systems. High power RF and microwave engineering are key enabling technologies in a wide range of industrial sectors. Formed in October 2001 and funded initially by the UK Department of Trade and Industry and the UK Particle Physics and Astronomy Research Council, the purpose of the HPRF Faraday Partnership is the development of a vibrant research, development and manufacturing base capable of exploiting opportunities in high power radio-frequency engineering. The partnership includes the key UK industrial companies, research laboratories and university research groups. The number of partners is constantly growing and already numbers over thirty. The partnership provides the enabling technology for future high power RF systems and their power supplies through its research programme. It is training people for the sector through PhD studentships and employment as Research Associates. It is planned to develop a Masters Training program. Support and involvement in research for companies in the supply chain is provided through a Partnership Office, a web site and through a range of government funded research schemes. The HPRF Faraday Partnership is seeking to establish more long term international research and development collaborations

Study of a power coupler for superconducting RF cavities used in high intensity proton accelerator

International Nuclear Information System (INIS)

Souli, M.

2007-07-01

The coaxial power coupler needed for superconducting RF cavities used in the high energy section of the EUROTRANS driver should transmit 150 kW (CW operation) RF power to the protons beam. The calculated RF and dielectric losses in the power coupler (inner and outer conductor, RF window) are relatively high. Consequently, it is necessary to design very carefully the cooling circuits in order to remove the generated heat and to ensure stable and reliable operating conditions for the coupler cavity system. After calculating all type of losses in the power coupler, we have designed and validated the inner conductor cooling circuit using numerical simulations results. We have also designed and optimized the outer conductor cooling circuit by establishing its hydraulic and thermal characteristics. Next, an experiment dedicated to study the thermal interaction between the power coupler and the cavity was successfully performed at CRYOHLAB test facility. The critical heat load Qc for which a strong degradation of the cavity RF performance was measured leading to Q c in the range 3 W-5 W. The measured heat load will be considered as an upper limit of the residual heat flux at the outer conductor cold extremity. A dedicated test facility was developed and successfully operated for measuring the performance of the outer conductor heat exchanger using supercritical helium as coolant. The test cell used reproduces the realistic thermal boundary conditions of the power coupler mounted on the cavity in the cryo-module. The first experimental results have confirmed the excellent performance of the tested heat exchanger. The maximum residual heat flux measured was 60 mW for a 127 W thermal load. As the RF losses in the coupler are proportional to the incident RF power, we can deduce that the outer conductor heat exchanger performance is continued up to 800 kW RF power. Heat exchanger thermal conductance has been identified using a 2D axisymmetric thermal model by comparing

Low power microwave tests on RF gun prototype of the Iranian Light Source Facility

Directory of Open Access Journals (Sweden)

A Sadeghipanah

2017-08-01

Full Text Available In this paper, we introduce RF electron gun of Iranian Light Source Facility (ILSF pre-injection system. Design, fabrication and low-power microwave tests results of the prototype RF electron gun have been described in detail. This paper also explains the tuning procedure of the prototype RF electron gun to the desired resonant frequency. The outcomes of this project brighten the path to the fabrication of the RF electron gun by the local industries  

Wide-Range Adaptive RF-to-DC Power Converter for UHF RFIDs

KAUST Repository

Ouda, Mahmoud H.

2016-07-27

A wide-range, differential, cross-coupled rectifier is proposed with an extended dynamic range of input RF power that enables wireless powering from varying distances. The proposed architecture mitigates the reverse-leakage problem in conven- tional, cross-coupled rectifiers without degrading sensitivity. A prototype is designed for UHF RFID applications, and is imple- mented using 0.18 μ m CMOS technology. On-chip measurements demonstrate a sensitivity of − 18 dBm for 1 V output over a 100 k Ω load and a peak RF-to-DC power conversion efficiency of 65%. A conventional, fully cross-coupled rectifier is fabricated along- side for comparison and the proposed rectifier shows more than 2 × increase in dynamic range and a 25% boosting in output voltage than the conventional rectifier

Spallation Neutron Source High Power RF Installation and Commissioning Progress

CERN Document Server

McCarthy, Michael P; Bradley, Joseph T; Fuja, Ray E; Gurd, Pamela; Hardek, Thomas; Kang, Yoon W; Rees, Daniel; Roybal, William; Young, Karen A

2005-01-01

The Spallation Neutron Source (SNS) linac will provide a 1 GeV proton beam for injection into the accumulator ring. In the normal conducting (NC) section of this linac, the Radio Frequency Quadupole (RFQ) and six drift tube linac (DTL) tanks are powered by seven 2.5 MW, 402.5 MHz klystrons and the four coupled cavity linac (CCL) cavities are powered by four 5.0 MW, 805 MHz klystrons. Eighty-one 550 kW, 805 MHz klystrons each drive a single cavity in the superconducting (SC) section of the linac. The high power radio frequency (HPRF) equipment was specified and procured by LANL and tested before delivery to ensure a smooth transition from installation to commissioning. Installation of RF equipment to support klystron operation in the 350-meter long klystron gallery started in June 2002. The final klystron was set in place in September 2004. Presently, all RF stations have been installed and high power testing has been completed. This paper reviews the progression of the installation and testing of the HPRF Sys...

Temporally resolved ozone distribution of a time modulated RF atmospheric pressure argon plasma jet: flow, chemical reaction, and transient vortex

International Nuclear Information System (INIS)

Zhang, S; Sobota, A; Van Veldhuizen, E M; Bruggeman, P J

2015-01-01

The ozone density distribution in the effluent of a time modulated RF atmospheric pressure plasma jet (APPJ) is investigated by time and spatially resolved by UV absorption spectroscopy. The plasma jet is operated with an averaged dissipated power of 6.5 W and gas flow rate 2 slm argon  +2% O 2 . The modulation frequency of the RF power is 50 Hz with a duty cycle of 50%. To investigate the production and destruction mechanism of ozone in the plasma effluent, the atomic oxygen and gas temperature is also obtained by TALIF and Rayleigh scattering, respectively. A temporal increase in ozone density is observed close to the quartz tube exit when the plasma is switched off due to the decrease in O density and gas temperature. Ozone absorption at different axial positions indicates that the ozone distribution is dominated by the convection induced by the gas flow and allows estimating the on-axis local gas velocity in the jet effluent. Transient vortex structures occurring during the switch on and off of the RF power also significantly affect the ozone density in the far effluent. (paper)

Simulation of RF power and multi-cusp magnetic field requirement for H{sup −} ion sources

Energy Technology Data Exchange (ETDEWEB)

Pathak, Manish [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Senecha, V.K., E-mail: kumarvsen@gmail.com [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Kumar, Rajnish; Ghodke, Dharmraj V. [Ion Source Lab., Proton Linac & Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

2016-12-01

A computer simulation study for multi-cusp RF based H{sup −} ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H{sup −} Linac project for SNS applications. The average reaction rates for different reactions responsible for H{sup −} ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H{sup -} ion source for a maximum possible H{sup −} ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H{sup −} ion source like excited hydrogen molecular density, H{sup −} ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H{sup −} ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H{sup −} ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

CORPORATE FEED WITH DUAL SEGMENT CIRCULAR POLARIZED ARRAY RECTENNA FOR LOW POWER RF ENERGY HARVESTING

Directory of Open Access Journals (Sweden)

CHIA CHAO KANG

2016-06-01

Full Text Available This paper focuses on the investigation of the level powers that can be scavenged from the ambient environment by using corporate feed with dual segment circular polarized antenna array . It will converts the received power to direct current (DC. Being a circular polarized antenna, it has higher inductance per unit area, a good Q-factor and compact capability. The design of corporate-series feed rectenna array is to achieve a high gain antenna and maximize the RF energy received by the rectenna system at ultra low power levels. The entire structure was investigated using a combination of harmonic balance nonlinear analysis and full wave electromagnetic field analysis. The results show that 5.0 dBi gain for circular polarized antenna array can be achieved at frequency 956 MHz. When the input power of 20 dBm fed into the transmitting antenna, the maximum distance for radio frequency (RF harvesting is 5.32m. The output DC voltage for various values of incident RF power is also presented. There are noticed reasonable agreements between the simulated and measured result and the works concludes that the investigation of RF energy harvesting system was successful.

RF MEMS: status of the industry and roadmaps

Science.gov (United States)

Bouchaud, Jeremie; Wicht, Henning

2005-01-01

Microsystems for Radio Frequency applications, known as RF MEMS, have entered the commercialization phase in 2003. Bulk Acoustic Wave filters are already produced in series and first commercial samples of switches are available. On the other hand, reliability and packaging problems are still a major hurdle especially for switches and tunable capacitors. Will RF MEMS hold their promise to be one of the future major businesses for MEMS? The presentation will give an overview on RF MEMS applications and market players. WTC will highlight technical challenges that still have to be solved to open mass markets such as mobile telephony and WLAN. WTC will also present applications of RF MEMS and opportunities in niche markets with high added value like military and space applications. WTC will provide a regional analysis and compare R&D focus and public funding situation in North America, Europe and Asia. Finally, WTC will present an updated product roadmap market forecast for RF MEMS devices for the 2004-2008 time period.

High-power rf pulse compression with SLED-II at SLAC

International Nuclear Information System (INIS)

Nantista, C.

1993-04-01

Increasing the peak rf power available from X-band microwave tubes by means of rf pulse compression is envisioned as a way of achieving the few-hundred-megawatt power levels needed to drive a next-generation linear collider with 50--100 MW klystrons. SLED-II is a method of pulse compression similar in principal to the SLED method currently in use on the SLC and the LEP injector linac. It utilizes low-los resonant delay lines in place of the storage cavities of the latter. This produces the added benefit of a flat-topped output pulse. At SLAC, we have designed and constructed a prototype SLED-II pulse-compression system which operates in the circular TE 01 mode. It includes a circular-guide 3-dB coupler and other novel components. Low-power and initial high-power tests have been made, yielding a peak power multiplication of 4.8 at an efficiency of 40%. The system will be used in providing power for structure tests in the ASTA (Accelerator Structures Test Area) bunker. An upgraded second prototype will have improved efficiency and will serve as a model for the pulse compression system of the NLCTA (Next Linear Collider Test Accelerator)

Very High Frequency Switch-Mode Power Supplies

DEFF Research Database (Denmark)

Madsen, Mickey Pierre

The importance of technology and electronics in our daily life is constantly increasing. At the same time portability and energy efficiency are currently some of the hottest topics. This creates a huge need for power converters in a compact form factor and with high efficiency, which can supply...... these electronic devices. This calls for new technologies in order to miniaturize the power electronics of today. One way to do this is by increasing the switching frequency dramatically and develop very high frequency switch mode power supplies. If these converters can be designed to operate efficiently, a huge...... size, weight and cost reduction can be achieved due to the smaller energy storing elements needed at these frequencies. The research presented in this thesis focuses on exactly this. First various technologies for miniaturization of power supplies are studied, e.g. piezo electric transformers, wide...

Pulsed power opening switch research at the University of New Mexico

International Nuclear Information System (INIS)

Humphries, S. Jr.

1987-01-01

Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

International Nuclear Information System (INIS)

Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

2013-01-01

The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

Line Capacity Expansion and Transmission Switching in Power Systems With Large-Scale Wind Power

DEFF Research Database (Denmark)

Villumsen, Jonas Christoffer; Bronmo, Geir; Philpott, Andy B.

2013-01-01

In 2020 electricity production from wind power should constitute nearly 50% of electricity demand in Denmark. In this paper we look at optimal expansion of the transmission network in order to integrate 50% wind power in the system, while minimizing total fixed investment cost and expected cost...... of power generation. We allow for active switching of transmission elements to reduce congestion effects caused by Kirchhoff's voltage law. Results show that actively switching transmission lines may yield a better utilization of transmission networks with large-scale wind power and increase wind power...

Exploiting adiabatically switched RF-field for manipulating spin hyperpolarization induced by parahydrogen

International Nuclear Information System (INIS)

Kiryutin, Alexey S.; Yurkovskaya, Alexandra V.; Lukzen, Nikita N.; Ivanov, Konstantin L.; Vieth, Hans-Martin

2015-01-01

A method for precise manipulation of non-thermal nuclear spin polarization by switching a RF-field is presented. The method harnesses adiabatic correlation of spin states in the rotating frame. A detailed theory behind the technique is outlined; examples of two-spin and three-spin systems prepared in a non-equilibrium state by Para-Hydrogen Induced Polarization (PHIP) are considered. We demonstrate that the method is suitable for converting the initial multiplet polarization of spins into net polarization: compensation of positive and negative lines in nuclear magnetic resonance spectra, which is detrimental when the spectral resolution is low, is avoided. Such a conversion is performed for real two-spin and three-spin systems polarized by means of PHIP. Potential applications of the presented technique are discussed for manipulating PHIP and its recent modification termed signal amplification by reversible exchange as well as for preparing and observing long-lived spin states

RF Energy Harvesting for Ubiquitous, Zero Power Wireless Sensors

Directory of Open Access Journals (Sweden)

Warda Saeed

2018-01-01

Full Text Available This paper presents a review of wireless power transfer (WPT followed by a comparison between ambient energy sources and an overview of different components of rectennas that are used for RF energy harvesting. Being less costly and environment friendly, rectennas are used to provide potentially inexhaustible energy for powering up low power sensors and portable devices that are installed in inaccessible areas where frequent battery replacement is difficult, if not impossible. The current challenges in rectenna design and a detailed comparison of state-of-the-art rectennas are also presented.

Practical test of the LINAC4 RF power system

CERN Document Server

Schwerg, N

2011-01-01

The high RF power for the Linac4 accelerating structures will be generated by thirteen 1.3 MW klystrons, previously used for the CERN LEP accelerator, and six new klystrons of 2.8 MW all operating at a frequency of 352.2 MHz. The power distribution scheme features a folded magic tee feeding the power from one 2.8 MW klystron to two LEP circulators. We present first results from the Linac4 test place, validating the approach and the used components as well as reporting on the klystron re-tuning activities.

Effects of rf power on electron density and temperature, neutral temperature, and Te fluctuations in an inductively coupled plasma

International Nuclear Information System (INIS)

Camparo, James; Fathi, Gilda

2009-01-01

Atomic clocks that fly on global-navigation satellites such as global positioning system (GPS) and Galileo employ light from low-temperature, inductively coupled plasmas (ICPs) for atomic signal generation and detection (i.e., alkali/noble-gas rf-discharge lamps). In this application, the performance of the atomic clock and the capabilities of the navigation system depend sensitively on the stability of the ICP's optical emission. In order to better understand the mechanisms that might lead to instability in these rf-discharge lamps, and hence the satellite atomic clocks, we studied the optical emission from a Rb/Xe ICP as a function of the rf power driving the plasma. Surprisingly, we found that the electron density in the plasma was essentially independent of increases in rf power above its nominal value (i.e., 'rf-power gain') and that the electron temperature was only a slowly varying function of rf-power gain. The primary effect of rf power was to increase the temperature of the neutrals in the plasma, which was manifested by an increase in Rb vapor density. Interestingly, we also found evidence for electron temperature fluctuations (i.e., fluctuations in the plasma's high-energy electron content). The variance of these fluctuations scaled inversely with the plasma's mean electron temperature and was consistent with a simple model that assumed that the total electron density in the discharge was independent of rf power. Taken as a whole, our results indicate that the electrons in alkali/noble-gas ICPs are little affected by slight changes in rf power and that the primary effect of such changes is to heat the plasma's neutral species.

Programmable Power Supply for AC Switching Magnet of Proton Accelerator

CERN Document Server

Jeong, Seong-Hun; Kang Heung Sik; Lee, Chi-Hwan; Lee, Hong-Gi; Park, Ki-Hyeon; Ryu, Chun-Kil; Sik Han, Hong; Suck Suh, Hyung

2005-01-01

The 100-MeV PEFP proton linac has two proton beam extraction lines for user' experiment. Each extraction line has 5 beamlines and has 5 Hz operating frequency. An AC switching magnet is used to distribute the proton beam to the 5 beamlines, An AC switching magnet is powered by PWM-controlled bipolar switching-mode converters. This converter is designed to operate at ±350A, 5 Hz programmable step output. The power supply is employed IGBT module and has controlled by a DSP (Digital Signal Process). This paper describes the design and test results of the power supply.

Modelling switching-time effects in high-frequency power conditioning networks

Science.gov (United States)

Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

1979-01-01

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

RF Wireless Power Transfer: Regreening Future Networks

OpenAIRE

Tran, Ha-Vu; Kaddoum, Georges

2017-01-01

Green radio communication is an emerging topic since the overall footprint of information and communication technology (ICT) services is predicted to triple between 2007 and 2020. Given this research line, energy harvesting (EH) and wireless power transfer (WPT) networks can be evaluated as promising approaches. In this paper, an overview of recent trends for future green networks on the platforms of EH and WPT is provided. By rethinking the application of radio frequency (RF)-WPT, a new conc...

The RF system for FELI linac

International Nuclear Information System (INIS)

Morii, Y.; Abe, S.; Keishi, T.; Tomimasu, T.

1995-01-01

FELI (Free Electron Laser Research Institute, Inc.) is constructing a Free Electron Laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using as S-band linac. The linac consists of a thermoionic 0.5ns-pulse triggered gun, a 714-MHz SHB (subharmonic buncher), a 2856-MHz standing wave type buncher, and seven ETL (Electro-technical Laboratory) type accelerating sections. An RF system of the linac for FELs is required of long pulse duration and high stability. Two S-band klystrons (TOSHIBA E3729) are operated in three pulse operation modes (pulse width and peak RF power): 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW. Each klystron modulator has a PFN consisting of 4 parallel networks of 24 capacitors and 24 variable inductors, and it has a line switch of an optical thyristor stack. An S-band klystron and its modulator were combined to test their performance at the works of NISSIN ELECTRIC Co. in December 1993. These equipments were installed at FELI in January 1994. The design and experimental results of the RF system are summarized in this paper. (author)

Battery-Powered RF Pre-Ionization System for the Caltech Magnetohydrodynamically-Driven Jet Experiment: RF Discharge Properties and MHD-Driven Jet Dynamics

Science.gov (United States)

Chaplin, Vernon H.

This thesis describes investigations of two classes of laboratory plasmas with rather different properties: partially ionized low pressure radiofrequency (RF) discharges, and fully ionized high density magnetohydrodynamically (MHD)-driven jets. An RF pre-ionization system was developed to enable neutral gas breakdown at lower pressures and create hotter, faster jets in the Caltech MHD-Driven Jet Experiment. The RF plasma source used a custom pulsed 3 kW 13.56 MHz RF power amplifier that was powered by AA batteries, allowing it to safely float at 4-6 kV with the cathode of the jet experiment. The argon RF discharge equilibrium and transport properties were analyzed, and novel jet dynamics were observed. Although the RF plasma source was conceived as a wave-heated helicon source, scaling measurements and numerical modeling showed that inductive coupling was the dominant energy input mechanism. A one-dimensional time-dependent fluid model was developed to quantitatively explain the expansion of the pre-ionized plasma into the jet experiment chamber. The plasma transitioned from an ionizing phase with depressed neutral emission to a recombining phase with enhanced emission during the course of the experiment, causing fast camera images to be a poor indicator of the density distribution. Under certain conditions, the total visible and infrared brightness and the downstream ion density both increased after the RF power was turned off. The time-dependent emission patterns were used for an indirect measurement of the neutral gas pressure. The low-mass jets formed with the aid of the pre-ionization system were extremely narrow and collimated near the electrodes, with peak density exceeding that of jets created without pre-ionization. The initial neutral gas distribution prior to plasma breakdown was found to be critical in determining the ultimate jet structure. The visible radius of the dense central jet column was several times narrower than the axial current channel

Very long pulse high-RF power test of a lower hybrid frequency antenna module

International Nuclear Information System (INIS)

Goniche, M.; Brossaud, J.; Barral, C.; Berger-By, G.; Bibet, Ph.; Poli, S.; Rey, G.; Tonon, G.; Seki, M.; Obara, K.

1994-03-01

Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed ∼ 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs

Very long pulse high-RF power test of a lower hybrid frequency antenna module

Energy Technology Data Exchange (ETDEWEB)

Goniche, M; Brossaud, J; Barral, C; Berger-By, G; Bibet, Ph; Poli, S; Rey, G; Tonon, G [Association Euratom-CEA, Centre d` Etudes Nucleaires de Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; Seki, M; Obara, K [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment; and others

1994-03-01

Outgassing, induced by very long RF waves injection at high power density was studied in a module, able to be used for a lower hybrid frequency antenna. Good RF properties of the module are reported, however, resonance phenomena with strong absorption of RF power (15%) was observed at high temperature (T>400 deg C). A large outgassing data base is provided by the 75 shots cumulating 27 hours of RF injection. The comparison with previous experiments (Tore Supra and TdV prototype modules) confirm the effect of baking and results are consistent. Outgassing increases exponentially with -1/T, and a desorption model with an activation energy Ed {approx} 0.35 eV fits the data up to 400 deg C. In order to design vacuum pumping system for large lower hybrid frequency antenna, outgassing rates are given for different working temperatures. (author). 11 refs., 55 figs.

GaN Power Stage for Switch-mode Audio Amplification

DEFF Research Database (Denmark)

Ploug, Rasmus Overgaard; Knott, Arnold; Poulsen, Søren Bang

2015-01-01

Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET) which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode Ga......N FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead...

Digital control of high-frequency switched-mode power converters

CERN Document Server

Corradini, Luca; Mattavelli, Paolo; Zane, Regan

This book is focused on the fundamental aspects of analysis, modeling and design of digital control loops around high-frequency switched-mode power converters in a systematic and rigorous manner Comprehensive treatment of digital control theory for power converters Verilog and VHDL sample codes are provided Enables readers to successfully analyze, model, design, and implement voltage, current, or multi-loop digital feedback loops around switched-mode power converters Practical examples are used throughout the book to illustrate applications of the techniques developed Matlab examples are also

Protection and switching system for the RFX power supply

International Nuclear Information System (INIS)

Browning, J.L.; Gray, J.W.; Mace, T.A.; Varley, G.L.

1986-01-01

The RFX toroidal field power supply comprises a large 4.8MJ (max) modular capacitor bank and four 14MW AC/DC converter flat-top power supply modules. The high fault level associated with the capacitor banks presents a problem in the design of the switching system, since mistiming could produce large currents in the flat-top supplies. The poloidal circuit consists of four groups of magnetising windings connected in series, each with its own flat-top convertor supply and opening switch transfer system. The flat-top converter supplies are needed when the transfer voltage has fallen from approximately 40kV to 1kV. Solutions to the problem of designing a fault-tolerant system which presents no danger to the flat-top converters are described in the paper. The adopted methods make use of hybrid ignitron/mechanical switches to give the required combination of switching speed and current carrying capacity, together with careful attention to the circuit layout of different switching elements. (author)

High power testing of a 17 GHz photocathode RF gun

International Nuclear Information System (INIS)

Chen, S.C.; Danly, B.G.; Gonichon, J.

1995-01-01

The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell (π mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design

Rf-to-dc power converters for wireless powering

KAUST Repository

Ouda, Mahmoud Hamdy; Salama, Khaled N.

2016-01-01

feedback circuit configured to provide feedback bias signals to gates of the pair of forward rectifying transistors via feedback branch elements. In another example, a method includes receiving a radio frequency (RF) signal; rectifying the RF signal via a

Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

International Nuclear Information System (INIS)

Chou, Po-Chien; Cheng, Stone

2015-01-01

Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

Energy Technology Data Exchange (ETDEWEB)

Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

2015-08-15

Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

Science.gov (United States)

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

LTE modem power consumption, SAR and RF signal strength emulation

DEFF Research Database (Denmark)

Musiige, Deogratius; Vincent, Laulagnet; Anton, François

2012-01-01

This paper presents a new methodology for emulating the LTE modem power consumption, emitted SAR and RF signal strength when transmitting an LTE signal. The inputs of the methodology are: modem logical/protocol commands, time advance, near-field specifier, and antenna characteristics. The power...... emulation model(s) are computed by a two layer 451 neural network based on physical power measurements. SAR is emulated by polynomial interpolation models based on FDTD simulations. The accuracies of the mathematical function approximations for the emulation models of power and SAR are 5.19% and 3...

Design of 1 MHz solid state high frequency power supply

International Nuclear Information System (INIS)

Parmar, Darshan Kumar; Singh, N.P.; Gajjar, Sandip

2015-01-01

A High Voltage High Frequency (HVHF) Power supply is used for various applications, like AM Transmitters, metallurgical applications, Wireless Power Transfer, RF Ion Sources, etc. The Ion Source for a Neutral beam Injector at ITER-India uses inductively coupled power source at High Frequency (∼ 1 MHz). Switching converter based topology used to generate 1 MHz sinusoidal output is expected to have advantages on efficiency and reliability as compared to traditional RF Tetrode tubes based oscillators. In terms of Power Electronics, thermal and power coupling issues are major challenges at such a high frequency. A conceptual design for a 200 kW, 1 MHz power supply and a prototype design for a 600W source been done. The prototype design is attempted with Class-E amplifier topology where a MOSFET is switched resonantly. The prototype uses two low power modules and a ferrite combiner to add the voltage and power at the output. Subsequently solution with class-D H-Bridge configuration have been evaluated through simulation where module design is stable as switching device do not participate in resonance, further switching device voltage rating is substantially reduced. The rating of the modules is essentially driven by the maximum power handling capacity of the MOSFETs and ferrites in the combiner circuit. The output passive network including resonance tuned network and impedance matching network caters for soft switching and matches the load impedance to 50 ohm respectively. This paper describes the conceptual design of a 200 kW power supply and experimental results of the prototype 600 W, 1 MHz source. (author)

Design of 1 MHz Solid State High Frequency Power Supply

Science.gov (United States)

Parmar, Darshan; Singh, N. P.; Gajjar, Sandip; Thakar, Aruna; Patel, Amit; Raval, Bhavin; Dhola, Hitesh; Dave, Rasesh; Upadhay, Dishang; Gupta, Vikrant; Goswami, Niranjan; Mehta, Kush; Baruah, Ujjwal

2017-04-01

High Frequency Power supply (HFPS) is used for various applications like AM Transmitters, metallurgical applications, Wireless Power Transfer, RF Ion Sources etc. The Ion Source for a Neutral beam Injector at ITER-India uses inductively coupled power source at High Frequency (∼1 MHz). Switching converter based topology used to generate 1 MHz sinusoidal output is expected to have advantages on efficiency and reliability as compared to traditional RF Tetrode tubes based oscillators. In terms of Power Electronics, thermal and power coupling issues are major challenges at such a high frequency. A conceptual design for a 200 kW, 1 MHz power supply and a prototype design for a 600 W source been done. The prototype design is attempted with Class-E amplifier topology where a MOSFET is switched resonantly. The prototype uses two low power modules and a ferrite combiner to add the voltage and power at the output. Subsequently solution with Class-D H-Bridge configuration have been evaluated through simulation where module design is stable as switching device do not participate in resonance, further switching device voltage rating is substantially reduced. The rating of the modules is essentially driven by the maximum power handling capacity of the MOSFETs and ferrites in the combiner circuit. The output passive network including resonance tuned network and impedance matching network caters for soft switching and matches the load impedance to 50ohm respectively. This paper describes the conceptual design of a 200 kW high frequency power supply and experimental results of the prototype 600 W, 1 MHz source.

Design and RF test result of High Power Hybrid Combiner for Helicon Wave Current Drive in KSTAR Plasmas

Energy Technology Data Exchange (ETDEWEB)

Park, S. Y.; Kim, H. J.; Wi, H. H.; Wang, S. J.; Kwak, J. G. [NFRI, Daejeon (Korea, Republic of)

2016-05-15

200 kW RF power will be injected to plasmas through the traveling wave antenna after combining four klystrons output powers using three hybrid combiners. Each klystron produces 60 kW output at the frequency of 500 MHz. RF power combiners commonly used to divide or combine output powers for various rf and microwave applications. It is divided into several types according to the design type such as Wilkinson combiner, radial and quadrature hybrid combiner. We designed high power hybrid combiners using 6-1/8 inch coaxial line. The power combiner has many advantages such as high isolation, low insertion loss and high power handling capability. In this paper design and rf test results of high power combiners will be described. High power combiners using three coaxial hybrid couplers will be utilized for effectively combining of 500 MHz, 200 kW output powers generated by four klystrons. We have designed, fabricated, and tested a 6-1/8 inch coaxial hybrid combiners at 500 MHz for efficiently off-axis Helicon wave current drive in KSTAR. Simulation and test results of high power coaxial hybrid combiners are good agreement.

Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

International Nuclear Information System (INIS)

Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

2007-01-01

A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

Science.gov (United States)

Dogan, Numan S.

2003-01-01

The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

Design and development of power supplies at VECC for accelerators

International Nuclear Information System (INIS)

Thakur, S.K.

2013-01-01

Several power supplies have been designed and developed in-house incorporating various topologies to match the load requirements. Most of the power supplies have been being utilised in K-130 and K-500 cyclotrons operation successfully from last several years. Amongst other types, Switching Mode PS (SMPS), Phase Controlled Rectifier (PCR), Linear mode power supply are mostly in use, irrespective of their own merits and demerits. Switching mode power supply (SMPS) is most common topology for various applications ranging from high current to high voltage applications. Due to low stored energy and faster response, the SMPS incorporating Pulse Switch Modulation (PSM) configuration is most suitable for high voltage DC power supply at larger power compared to its counterparts, makes possible to operate the power system without crowbar. For an IOT cathode power supply, a 200kW at - 40kV High voltage power supply is under development incorporating SMPS and PSM technique. Earlier, High Voltage power supply was made by using Tetrode Tube in linear mode for RF amplifier for K-130 Cyclotron. Later, in K-500 Cyclotron, a High Voltage power supply was developed incorporating PCR topology rated at 20kV, 20 Amp for Anodes for 3 nos. of RF amplifiers. These HV power supply is equipped with ultra-fast acting Crowbar Protection System developed in VECC which is for the protection of costly RF Tubes against the internal arc. Design and development of SMPS based Bipolar Power Supply with 4-Quadrant operation rated at ± 27 V, ± 300 Amp with current stability around 100 ppm for Super-conducting Magnets along with quench protection and energy dumping scheme. (author)

Characterization of dielectric charging in RF MEMS

NARCIS (Netherlands)

Herfst, R.W.; Huizing, H.G.A.; Steeneken, P.G.; Schmitz, Jurriaan

2005-01-01

Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving

Continuing studies of plasma erosion switches for power conditioning on multiterawatt pulsed power accelerators

International Nuclear Information System (INIS)

Stringfield, R.; Gilman, C.; James, G.; Peters, T.; Sincerny, P.; Wong, S.

1983-01-01

Recent PITHON experiments with plasma erosion switches (PES) have extended the range of operation of the switches by about 50 percent, in terms of closed time and charge passing through the switch. The quantity of charge passed through the switch has been increased to as much as 35 mC. Currents as large as 1 MA and voltages as great as 1.8 MV have been switched off to be diverted to a downstream load. The impedance of the erosion switch can be described as having three stages: 1) essentially zero impedance, 2) a transitional opening phase, and 3) an impedance which is very large (greater than 5 Ω) in comparison with the subohm downstream load. Current diagnostics, consisting of Rogowski coils and segmented shunts, have been successfully developed to monitor the current which propagates to the load region. These monitors have measured rise times as short as 38 ns and slew rates as great as 10 14 A/s at the load. With wire array loads, the pulse conditioning of the switch has been observed to reduce the magnitude of the current losses in the feed which are present when no switch is used. Correlations have been made between the switch closed time, voltage, current, and power with the feed inductance and the generator power injected into the magnetic insulated transmission line (MITL)

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

Dynamic optimum dead time in piezoelectric transformer-based switch-mode power supplies

DEFF Research Database (Denmark)

Ekhtiari, Marzieh; Andersen, Thomas; Andersen, Michael A. E.

2016-01-01

to charge and discharge the input capacitance of piezoelectric transformers in order to achieve zero-voltage switching. This paper proposes a method for detecting the optimum dead time in piezoelectric transformer-based switch-mode power supplies. The provision of sufficient dead time in every cycle......Soft switching is required to attain high efficiency in high-frequency power converters. Piezoelectric transformerbased converters can benefit from soft switching in terms of significantly diminished switching losses and stresses. Adequate dead time is needed in order to deliver sufficient energy...

Advantages of using a two-switch forward in single-stage power factor corrected power supplies

DEFF Research Database (Denmark)

Petersen, Lars

2000-01-01

A single-stage power factor corrected power supply using a two-switch forward is proposed to increase efficiency. The converter is operated in the DCM (discontinues conduction mode) and it is shown that this operation mode ensures the intermediate DC-bus to be controlled only by means of circuit...... supply has been implemented. The measured efficiency is between 85% and 88.5% in the range 30 W-500 W and the measured power factor at full load is 0.95....... parameters and therefore independent of load variations. The DCM operation often has a diminishing effect on the efficiency but by use of the two-switch topology high efficiency with minimum circuit complexity can be achieved in this mode. A 500 W 70 V prototype of the two-switch boost-forward PFC power...

Analytical Modeling and Simulation of Four-Switch Hybrid Power Filter Working with Sixfold Switching Symmetry

Czech Academy of Sciences Publication Activity Database

Tlustý, J.; Škramlík, Jiří; Švec, J.; Valouch, Viktor

2012-01-01

Roč. 2012, č. 292178 (2012), s. 1-17 ISSN 1024-123X Institutional support: RVO:61388998 Keywords : analytical modeling * four-switch hybrid power filter * sixfold switching symmetry Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.383, year: 2012 http://www.hindawi.com/journals/mpe/2012/292178/

Practical computer analysis of switch mode power supplies

CERN Document Server

Bennett, Johnny C

2006-01-01

When designing switch-mode power supplies (SMPSs), engineers need much more than simple "recipes" for analysis. Such plug-and-go instructions are not at all helpful for simulating larger and more complex circuits and systems. Offering more than merely a "cookbook," Practical Computer Analysis of Switch Mode Power Supplies provides a thorough understanding of the essential requirements for analyzing SMPS performance characteristics. It demonstrates the power of the circuit averaging technique when used with powerful computer circuit simulation programs. The book begins with SMPS fundamentals and the basics of circuit averaging models, reviewing most basic topologies and explaining all of their various modes of operation and control. The author then discusses the general analysis requirements of power supplies and how to develop the general types of SMPS models, demonstrating the use of SPICE for analysis. He examines the basic first-order analyses generally associated with SMPS performance along with more pra...

Development and performance test of a new high power RF window in S-band PLS-II LINAC

Science.gov (United States)

Hwang, Woon-Ha; Joo, Young-Do; Kim, Seung-Hwan; Choi, Jae-Young; Noh, Sung-Ju; Ryu, Ji-Wan; Cho, Young-Ki

2017-12-01

A prototype of RF window was developed in collaboration with the Pohang Accelerator Laboratory (PAL) and domestic companies. High power performance tests of the single RF window were conducted at PAL to verify the operational characteristics for its application in the Pohang Light Source-II (PLS-II) linear accelerator (Linac). The tests were performed in the in-situ facility consisting of a modulator, klystron, waveguide network, vacuum system, cooling system, and RF analyzing equipment. The test results with Stanford linear accelerator energy doubler (SLED) have shown no breakdown up to 75 MW peak power with 4.5 μs RF pulse width at a repetition rate of 10 Hz. The test results with the current operation level of PLS-II Linac confirm that the RF window well satisfies the criteria for PLS-II Linac operation.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2011-08-01

Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Low prepulse, high power density water dielectric switching

International Nuclear Information System (INIS)

Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

1979-01-01

Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

Studies in RF power communication, SAR, and temperature elevation in wireless implantable neural interfaces.

Directory of Open Access Journals (Sweden)

Yujuan Zhao

Full Text Available Implantable neural interfaces are designed to provide a high spatial and temporal precision control signal implementing high degree of freedom real-time prosthetic systems. The development of a Radio Frequency (RF wireless neural interface has the potential to expand the number of applications as well as extend the robustness and longevity compared to wired neural interfaces. However, it is well known that RF signal is absorbed by the body and can result in tissue heating. In this work, numerical studies with analytical validations are performed to provide an assessment of power, heating and specific absorption rate (SAR associated with the wireless RF transmitting within the human head. The receiving antenna on the neural interface is designed with different geometries and modeled at a range of implanted depths within the brain in order to estimate the maximum receiving power without violating SAR and tissue temperature elevation safety regulations. Based on the size of the designed antenna, sets of frequencies between 1 GHz to 4 GHz have been investigated. As expected the simulations demonstrate that longer receiving antennas (dipole and lower working frequencies result in greater power availability prior to violating SAR regulations. For a 15 mm dipole antenna operating at 1.24 GHz on the surface of the brain, 730 uW of power could be harvested at the Federal Communications Commission (FCC SAR violation limit. At approximately 5 cm inside the head, this same antenna would receive 190 uW of power prior to violating SAR regulations. Finally, the 3-D bio-heat simulation results show that for all evaluated antennas and frequency combinations we reach FCC SAR limits well before 1 °C. It is clear that powering neural interfaces via RF is possible, but ultra-low power circuit designs combined with advanced simulation will be required to develop a functional antenna that meets all system requirements.

Effect of RF Interference on the Security-Reliability Trade-off Analysis of Multiuser Mixed RF/FSO Relay Networks with Power Allocation

KAUST Repository

Abd El-Malek, Ahmed

2017-03-27

In this paper, the impact of radio frequency (RF) cochannel interference (CCI) on the performance of multiuser mixed RF/free-space optical (FSO) relay network with opportunistic user scheduling under eavesdropping attack is studied. The considered system includes multiple users, one decode-and-forward relay, one destination, and an eavesdropper. In the analysis, the RF/FSO channels follow Nakagami-m/Gamma-Gamma fading models, respectively, with pointing errors on the FSO link. Exact closed-form expression for the system outage probability is derived. Then, an asymptotic expression for the outage probability is obtained at the high signal-to-interference-plus-noise ratio regime to get more insights on the system performance. Moreover, the obtained results are used to find the optimal transmission power in different turbulence conditions. The secrecy performance is studied in the presence of CCI at both the authorized relay and eavesdropper, where closed-form expressions are derived for the intercept probability. The physical layer security performance is enhanced using cooperative jamming models, where new closed-form expressions are derived for the intercept probability. Another power allocation optimization problem is formulated to find the optimal transmission and jamming powers. The derived analytical formulas are supported by numerical results to clarify the main contributions of this paper.

Optimization of Modulation Waveforms for Improved EMI Attenuation in Switching Frequency Modulated Power Converters

Directory of Open Access Journals (Sweden)

Deniss Stepins

2015-01-01

Full Text Available Electromagnetic interference (EMI is one of the major problems of switching power converters. This paper is devoted to switching frequency modulation used for conducted EMI suppression in switching power converters. Comprehensive theoretical analysis of switching power converter conducted EMI spectrum and EMI attenuation due the use of traditional ramp and multislope ramp modulation waveforms is presented. Expressions to calculate EMI spectrum and attenuation are derived. Optimization procedure of the multislope ramp modulation waveform is proposed to get maximum benefits from switching frequency modulation for EMI reduction. Experimental verification is also performed to prove that the optimized multislope ramp modulation waveform is very useful solution for effective EMI reduction in switching power converters.

Advances in high voltage power switching with GTOs

International Nuclear Information System (INIS)

Podlesak, T.F.

1990-01-01

The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

Volterra series based predistortion for broadband RF power amplifiers with memory effects

Institute of Scientific and Technical Information of China (English)

Jin Zhe; Song Zhihuan; He Jiaming

2008-01-01

RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

Technology development of solid state rf systems at 350 MHz and 325 MHz for RF accelerator

International Nuclear Information System (INIS)

Rama Rao, B.V.; Mishra, J.K.; Pande, Manjiri; Gupta, S.K.

2011-01-01

For decades vacuum tubes and klystrons have been used in high power application such as RF accelerators and broadcast transmitters. However, now, the solid-state technology can give power output in kilowatt regime. Higher RF power output can be achieved by combining several solid-state power amplifier modules using power combiners. This technology presents several advantages over traditional RF amplifiers, such as simpler start-up procedure, high modularity, high redundancy and flexibility, elimination of high voltage supplies and high power circulators, low operational cost, online maintenance without shut down of RF power station and no warm up time. In BARC, solid state amplifier technology development is being done both at 350 MHz and 325 MHz using RF transistors such as 1 kW LDMOS and 350 Watt VDMOS. Topology of input and output matching network in RF modules developed, consist of two L type matching sections with each section having a combination of series micro-strip line and parallel capacitor. The design is of equal Q for both the sections and of 25 ohm characteristics impedance of micro strip lines. Based on this, lengths of micro strips lines and values of shunt capacitors have been calculated. The calculated and simulated values of network elements have been compared. Similarly power combiners have been designed and developed based on Wilkinson techniques without internal resistors and using coaxial technology. This paper presents design and development of RF power amplifier modules, associated power combiner technologies and then integrated RF power amplifier. (author)

An approach to evaluate switching overvoltages during power system restoration

Directory of Open Access Journals (Sweden)

Sadeghkhani Iman

2012-01-01

Full Text Available Transformer switching is one of the important stages during power system restoration. This switching can cause harmonic overvoltages that might damage some equipment and delay power system restoration. Core saturation on the energisation of a transformer with residual flux is a noticeable factor in harmonic overvoltages. This work uses artificial neural networks (ANN in order to estimate the temporary overvoltages (TOVs due to transformer energisation. In the proposed methodology, the Levenberg-Marquardt method is used to train the multilayer perceptron. The developed ANN is trained with the worst case of switching condition, and tested for typical cases. Simulated results for a partial 39-bus New England test system, show the proposed technique can accurately estimate the peak values and durations of switching overvoltages.

Suppression of multipacting in high power RF couplers operating with superconducting cavities

Energy Technology Data Exchange (ETDEWEB)

Ostroumov, P.N., E-mail: ostroumov@frib.msu.edu [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States); Kazakov, S. [Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Morris, D.; Larter, T.; Plastun, A.S.; Popielarski, J.; Wei, J.; Xu, T. [Facility for Rare Isotope Beams (FRIB), Michigan State University, East Lansing, MI 48824 (United States)

2017-06-01

Capacitive input couplers based on a 50 Ω coaxial transmission line are frequently used to transmit RF power to superconducting (SC) resonators operating in CW mode. It is well known that coaxial transmission lines are prone to multipacting phenomenon in a wide range of RF power level and operating frequency. The Facility for Rare Isotope Beams (FRIB) being constructed at Michigan State University includes two types of quarter wave SC resonators (QWR) operating at 80.5 MHz and two types of half wave SC resonators (HWR) operating at 322 MHz. As was reported in ref. [1] a capacitive input coupler used with HWRs was experiencing strong multipacting that resulted in a long conditioning time prior the cavity testing at design levels of accelerating fields. We have developed an insert into 50 Ω coaxial transmission line that provides opportunity to bias the RF coupler antenna and protect the amplifier from the bias potential in the case of breakdown in DC isolation. Two of such devices have been built and are currently used for the off-line testing of 8 HWRs installed in the cryomodule.

A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

Directory of Open Access Journals (Sweden)

Cuidong Xu

2015-09-01

Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

Design of RF energy harvesting platforms for power management unit with start-up circuits

Science.gov (United States)

Costanzo, Alessandra; Masotti, Diego

2013-12-01

In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

Design of RF energy harvesting platforms for power management unit with start-up circuits

International Nuclear Information System (INIS)

Costanzo, Alessandra; Masotti, Diego

2013-01-01

In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion

Design and development of power supplies for high power IOT based RF amplifier

International Nuclear Information System (INIS)

Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

2013-01-01

Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

Design of power supply system for the prototype RF-driven negative ion source for neutral beam injection application

Energy Technology Data Exchange (ETDEWEB)

Jiang, Caichao; Hu, Chundong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Graduate school, University of Science and Technology of China, Hefei 230026 (China); Wei, Jianglong, E-mail: jlwei@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xie, Yahong; Xu, Yongjian; Liang, Lizhen; Chen, Shiyong; Liu, Sheng; Liu, Zhimin; Xie, Yuanlai [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2017-04-15

Highlights: • A supporting power supply system was designed in details for a RF-driven prototype negative ion source at ASIPP. • The RF power supply for plasma generation adopts an all-solid-state power supply structure. • The extraction grid power supply adopts the pulse step modulator (PSM) technology. - Abstract: In order to study the generation and extraction of negative ions for neutral beam injection application, a prototype RF-driven negative ion source and the corresponding test bed are under construction at Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP). The target of the negative ion source is extracting a negation ion beam of 350 A/m{sup 2} for 3600 s plasma duration and 100 s beam duration. According to the required parameters of test bed, the design of power supply system is put forward for earlier study. In this paper, the performance requirements and design schemes of RF power supply for plasma generation, impedance matching network, bias voltage power supply, and extraction voltage power supply for negative beam extraction are introduced in details. The schemes provide a reference for the construction of power supply system and lay a foundation for the next phase of experimental operation.

Electron beam gun with kinematic coupling for high power RF vacuum devices

Science.gov (United States)

Borchard, Philipp

2016-11-22

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composed of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.

The Application of High Temperature Superconducting Materials to Power Switches

CERN Document Server

March, S A; Ballarino, A

2009-01-01

Superconducting switches may find application in superconducting magnet systems that require energy extraction. Such superconducting switches could be bypass-switches that are operated in conjunction with a parallel resistor or dump-switches where all of the energy is dissipated in the switch itself. Bypass-switches are more suited to higher energy circuits as a portion of the energy can be dissipated in the external dump resistor. Dump- switches require less material and triggering energy as a lower switch resistance is needed to achieve the required total dump resistance. Both superconducting bypass-switches and superconducting dump-switches can be ther- mally activated. Switching times that are comparable to those obtained with mechanical bypass-switch systems can be achieved using a co-wound heater that is powered by a ca- pacitor discharge. Switches that have fast thermal diffusion times through the insulation can be modelled as a lumped system whereas those with slow thermal diffusion times were modelle...

Powering Autonomous Sensors An Integral Approach with Focus on Solar and RF Energy Harvesting

CERN Document Server

Penella-López, María Teresa

2011-01-01

Autonomous sensors transmit data and power their electronics without using cables. They can be found in e.g. wireless sensor networks (WSNs) or remote acquisition systems. Although primary batteries provide a simple design for powering autonomous sensors, they present several limitations such as limited capacity and power density, and difficulty in predicting their condition and state of charge. An alternative is to extract energy from the ambient (energy harvesting). However, the reduced dimensions of most autonomous sensors lead to a low level of available power from the energy transducer. Thus, efficient methods and circuits to manage and gather the energy are a must. An integral approach for powering autonomous sensors by considering both primary batteries and energy harvesters is presented. Two rather different forms of energy harvesting are also dealt with: optical (or solar) and radiofrequency (RF). Optical energy provides high energy density, especially outdoors, whereas RF remote powering is possibly...

Simulation of Novel NEMS Contact Switch Using MRTD with Alterable Steps

Directory of Open Access Journals (Sweden)

Wen-Ge Yu

2010-01-01

Full Text Available In order to apply Radio Frequency Micro-nano-Electro-Mechanical System (MEMS/NEMS technologies to produce miniature, high isolation, low insertion loss, good linear characteristic, and low power consumption microwave switches, we present a novel NEMS switch with nanoscaling in this paper through the analysis of electrics and mechanics of the RF switch. The measured data show the pull-in voltage of 24.1 V and the good RF performance of the insertion loss of below −10 dB at 0 GHz on the “on” state, and the isolation of beyond –40 dB at 0–40 GHz on the “off” state, indicating that the witch is suitable for the 0–40 GHz applications. Our analysis shows that the NEMS switch not only can work in wide frequency bands, but also has better isolation performance in lower frequency, thus extending the application to the lower band. The Haar-wavelet-based multiresolution time domain (MRTD with compactly supported scaling function is used for modeling and analyzing the nanomachine switch for the first time. The major advantage of the MRTD algorithms is their capability to develop real-time time and space adaptive grids through the efficient thresholding of the wavelet coefficients. The error between the measured and computed results is below 5%, this indicated that the Haar-wavelet-based multiresolution time domain was suitable for simulating the nano-scaling contact switch.

A high-power rf linear accelerator for FELS [free-electron lasers

International Nuclear Information System (INIS)

Sheffield, R.L.; Watson, J.M.

1987-01-01

This paper describes the design of a high average current rf linear accelerator suitable for driving short-wavelength free-electron lasers (FEL). It is concluded that the design of a room-temperature rf linear acelerator that can meet the stringent requirements of a high-power short-wavelength FEL appears possible. The accelerator requires the use of an advanced photoelectric injector that is under development; the accelerator components, however, do not require appreciable development. At these large beam currents, low-frequency, large-bore room-temperature cavities can be highly efficient and give all specified performance with minimal risk. 20 refs

Suppressing RF breakdown of powerful backward wave oscillator by field redistribution

Directory of Open Access Journals (Sweden)

W. Song

2012-03-01

Full Text Available An over mode method for suppressing the RF breakdown on metal surface of resonant reflector cavity in powerful backward wave oscillator is investigated. It is found that the electric field is redistributed and electron emission is restrained with an over longitudinal mode cavity. Compared with the general device, a frequency band of about 5 times wider and a power capacity of at least 1.7 times greater are obtained. The results were verified in an X-band high power microwave generation experiment with the output power near 4 gigawatt.

Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

2008-01-01

While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

Design of an Ultra-wideband Pseudo Random Coded MIMO Radar Based on Radio Frequency Switches

Directory of Open Access Journals (Sweden)

Su Hai

2017-02-01

Full Text Available A Multiple-Input Multiple-Output (MIMO ultra-wideband radar can detect the range and azimuth information of targets in real time. It is widely used for geological surveys, life rescue, through-wall tracking, and other military or civil fields. This paper presents the design of an ultra-wideband pseudo random coded MIMO radar that is based on Radio Frequency (RF switches and implements a MIMO radar system. RF switches are employed to reduce cost and complexity of the system. As the switch pressure value is limited, the peak power of the transmitting signal is 18 dBm. The ultra-wideband radar echo is obtained by hybrid sampling, and pulse compression is computed by Digital Signal Processors (DSPs embedded in an Field-Programmable Gate Array (FPGA to simplify the signal process. The experiment illustrates that the radar system can detect the range and azimuth information of targets in real time.

Developments and directions in 200 MHz very high power RF at LAMPF

International Nuclear Information System (INIS)

Cliff, R.; Bush, E.D.; DeHaven, R.A.; Harris, H.W.; Parsons, M.

1991-01-01

The Los Alamos Meson Physics Facility (LAMPF), is a linear particle accelerator a half-mile long. It produces an 800 million electron- volt hydrogen-ion beam at an average current of more than one milliamp. The first RF section of the accelerator consists of four Alvarez drift-tube structures. Each of these structures is excited by an amplifier module at a frequency of 201.25 MHz. These amplifiers operate at a duty of 13 percent or more and at peak pulsed power levels of about 2.5 million watts. The second RF accelerator section consists of forty-four side-coupled-cavity structures. Each of these is excited by an amplifier module at a frequency of 805 MHz. These amplifiers operate at a duty of up to 12 percent and at peak pulsed power levels of about 1.2 million watts. The relatively high average beam current in the accelerator places a heavy demand upon components in the RF systems. The 201-MHz modules have always required a large share of maintenance efforts. In recent years, the four 201.25 MHz modules have been responsible for more than twice as much accelerator down-time as have the forty-four 805 MHz modules. This paper reviews recent, ongoing, and planned improvements in the 201-MHz systems. The Burle Industries 7835 super power triode is used in the final power amplifiers of each of the 201-MHz modules. This tube has been modified for operation at LAMPF by the addition of Penning ion vacuum''pumps.'' This has enabled more effective tube conditioning and restarting. A calorimetry system of high accuracy is in development to monitor tube plate-power dissipation

Low Power Very High Frequency Switch-Mode Power Supply with 50 V Input and 5 V Output

DEFF Research Database (Denmark)

Madsen, Mickey Pierre; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

This paper presents the design of a resonant converter with a switching frequency in the very high frequencyrange (30-300 MHz), a large step down ratio (10 times) and low output power (1 W). Several different invertersand rectifiers are analyzed and compared. The class E inverter and rectifier...... are selected based on complexity andefficiency estimates. Three different power stages are implemented; one with a large input inductor, one with a switch with small capacitances and one with a switch with low on resistance. The power stages are designed with the same specifications and efficiencies from 60...

Application of plasma erosion opening switches to high power accelerators for pulse compression and power multiplication

International Nuclear Information System (INIS)

Meyer, R.A.; Boller, J.R.; Commisso, R.J.

1983-01-01

A new vacuum opening switch called a plasma erosion opening switch is described. A model of its operation is presented and the energy efficiency of such a switch is discussed. Recent high power experiments on the Gamble II accelerator are described and compared to previous experiments

Reliability impact of RF tube technology for the NPB

International Nuclear Information System (INIS)

Bueck, J.C.

1989-01-01

Two reliability options, redundancy and operating margin, are examined to determine their effect on power system configurations using RF tube technology (klystron and klystrode) powered Neutral Particle Beam weapons. Redundance is addressed by providing an additional identical RF tube to the tubes required to power an accelerator RF element (DTL section, RFQ, or CCL). RF elements do not share RF power with other RF elements. Operating margin provides increased reliability by sizing the RF tubes such that tube operating levels may be increased compensate for the loss of a tube. It is shown that power system mass is affected by the choice of reliability measures, that higher power tubes coupled with higher power RF elements may mitigate mass increases, and that redundancy appears preferable to operating margin as a method of improving RF system reliability

CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

KAUST Repository

Abdul Rahim, Farhan

2014-01-01

MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions

Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

Science.gov (United States)

Thakur, S. K.; Kumar, Y.

2018-05-01

This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

RF-sheath assessment of ICRF antenna geometry for long pulses

International Nuclear Information System (INIS)

Colas, L.; Bremond, S.

2003-01-01

Monitoring powered ion cyclotron resonance frequency (ICRF) antennas in magnetic fusion devices has revealed localized modifications of the plasma edge in the antenna shadow, most of them probably related to an enhanced polarization of the scrape-off layer (SOL) through radio-frequency (RF) sheath rectification. Although tolerable on present short RF pulses, sheaths should be minimized, as they may hinder proper operation of steady-state antennas and other subsystems connected magnetically to them, such as lower hybrid grills. As a first step towards mitigating RF sheaths in the design of future antennas, the present paper analyses the spatial structure of sheath potential maps in their vicinity, in relation with the 3D topology of RF near fields and the geometry of antenna front faces. Various combinations of poloidal radiating straps are first considered, and results are confronted to those inferred from transmission line theory. The dependence of sheath potentials on RF voltages or RF currents is studied. The role of RF near-field symmetries along tilted field lines is stressed to interpret such effects as that of strap phasing. A generalization of the 'dipole effect' is proposed. With similar arguments, the behavior of Faraday screen corners, where hot spots concentrate on Tore-Supra (TS), is then studied. The merits of aligning the antenna structure with the tilted magnetic field are thus discussed. The effect of switching from TS (high RF voltage near corners) to ITER-like electrical configurations of the straps (high voltage near equatorial plane) is also analyzed. (authors)

Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

Energy Technology Data Exchange (ETDEWEB)

Bargallo, E., E-mail: enric.bargallo-font@upc.edu [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Giralt, A.; Martinez, G. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Weber, M.; Regidor, D.; Arroyo, J.M. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain); Abal, J.; Dies, J.; Tapia, C.; De Blas, A. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Mendez, P.; Ibarra, A.; Molla, J. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain)

2013-10-15

Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives.

Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

International Nuclear Information System (INIS)

Bargallo, E.; Giralt, A.; Martinez, G.; Weber, M.; Regidor, D.; Arroyo, J.M.; Abal, J.; Dies, J.; Tapia, C.; De Blas, A.; Mendez, P.; Ibarra, A.; Molla, J.

2013-01-01

Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives

Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

International Nuclear Information System (INIS)

Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

2012-01-01

We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

High efficiency three-phase power factor correction rectifier using SiC switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Science.gov (United States)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Beyond the RF photogun

NARCIS (Netherlands)

Luiten, O.J.; Rozenzweig, J.; Travish, G.

2003-01-01

Laser-triggered switching of MV DC voltages enables acceleration gradients an order of magnitude higher than in state-of-the-art RF photoguns. In this way ultra-short, high-brightness electron bunches may be generated without the use of magnetic compression. The evolution of the bunch during the

High power test of RF window and coaxial line in vacuum

International Nuclear Information System (INIS)

Sun, D.; Champion, M.; Gormley, M.; Kerns, Q.; Koepke, K.; Moretti, A.

1993-01-01

Primary rf input couplers for the superconducting accelerating cavities of the TESLA electron linear accelerator test to be performed at DESY, Hamburg, Germany are under development at both DESY and Fermilab. The input couplers consist of a WR650 waveguide to coaxial line transition with an integral ceramic window, a coaxial connection to the superconducting accelerating cavity with a second ceramic window located at the liquid nitrogen heat intercept location, and bellows on both sides of the cold window to allow for cavity motion during cooldown, coupling adjustments and easier assembly. To permit in situ high peak power processing of the TESLA superconducting accelerating cavities, the input couplers are designed to transmit nominally 1 ms long, 2 MW peak, 1.3 GHz rf pulses from the WR650 waveguide at room temperature to the cavities at 1.8 K. The coaxial part of the Fermilab TESLA input coupler design has been tested up to 1.7 MW using the prototype 805 MHz rf source located at the A0 service building of the Tevatron. The rf source, the testing system and the test results are described

Nanoelectromechanical Switches for Low-Power Digital Computing

Directory of Open Access Journals (Sweden)

Alexis Peschot

2015-08-01

Full Text Available The need for more energy-efficient solid-state switches beyond complementary metal-oxide-semiconductor (CMOS transistors has become a major concern as the power consumption of electronic integrated circuits (ICs steadily increases with technology scaling. Nano-Electro-Mechanical (NEM relays control current flow by nanometer-scale motion to make or break physical contact between electrodes, and offer advantages over transistors for low-power digital logic applications: virtually zero leakage current for negligible static power consumption; the ability to operate with very small voltage signals for low dynamic power consumption; and robustness against harsh environments such as extreme temperatures. Therefore, NEM logic switches (relays have been investigated by several research groups during the past decade. Circuit simulations calibrated to experimental data indicate that scaled relay technology can overcome the energy-efficiency limit of CMOS technology. This paper reviews recent progress toward this goal, providing an overview of the different relay designs and experimental results achieved by various research groups, as well as of relay-based IC design principles. Remaining challenges for realizing the promise of nano-mechanical computing, and ongoing efforts to address these, are discussed.

Design, development and operational experience of radio frequency (RF) power systems/technologies for LEHIPA and 400 keV RFQ

International Nuclear Information System (INIS)

Pande, Manjiri; Shrotriya, Sandip; Patel, Niranjan

2015-01-01

The important technology development for ion accelerators of 'accelerator driven sub critical reactor system (ADS) is being done under the program of Department of Atomic Energy (DAE). In BARC (BARC) of DAE, technology development of 400 keV radio frequency quadrupole (RFQ) accelerator is done and a 20 MeV - low energy high intensity proton accelerator (LEHIPA) is under development. A 400 KeV deuteron RFQ accelerator is already developed at BARC and its 60 kW radio frequency (RF) power system required for beam acceleration has been designed, developed and tested both in CW mode and in pulse mode for full power of 60 leW. It has been successfully integrated with RFQ via 6-1/8'', 50 ohm RF transmission line, to accelerate proton beam up to 200 KeV energy and deuteron beam to 400 KeV energy. LEHIPA requires about 3 MW of RF power for its operation. So, three 1 MW, 352 MHz RF systems based on klystron will be developed for RFQ and two DTLs. The klystron based RF system for 3 MeV RFQ is under commissioning. Its various subsystems like energy less and insulated gate bipolar transistor (IGBT) based high voltage and low voltage bias supplies, a critical and fast protection and control system - handling various types of field signals, fast acting hard wired instrumentation circuits for critical signals, 100 kV crowbar with its circuits, pulsing circuits and RF circuits have been successfully designed, developed and integrated with klystron. Latest technology development of solid state RF amplifiers at 325 MHz and 350 MHz for normal and super conducting accelerators has attained a certain power level. This paper will discuss all these high power RF systems in detail. (author)

Topology Optimization of Stressed Capacitive RF MEMS Switches

DEFF Research Database (Denmark)

Philippine, Mandy A.; Sigmund, Ole; Rebeiz, Gabriel M.

2013-01-01

Geometry design can improve a capacitive radio-frequency microelectromechanical system switch's reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch's membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-o...

Outage Performance of Hybrid FSO/RF System with Low-Complexity Power Adaptation

KAUST Repository

Rakia, Tamer; Yang, Hong-Chuan; Gebali, Fayez; Alouini, Mohamed-Slim

2016-01-01

Hybrid free-space optical (FSO) / radio-frequency (RF) systems have emerged as a promising solution for high data- rate wireless communication systems. We consider truncated channel inversion based power adaptation strategy for coherent and non

Microscopic investigation of RF surfaces of 3 GHz niobium accelerator cavities following RF processing

International Nuclear Information System (INIS)

Graber, J.; Barnes, P.; Flynn, T.; Kirchgessner, J.; Knobloch, J.; Moffat, D.; Muller, H.; Padamsee, H.; Sears, J.

1993-01-01

RF processing of Superconducting accelerating cavities is achieved through a change in the electron field emission (FE) characteristics of the RF surface. The authors have examined the RF surfaces of several single-cell 3 GHz cavities, following RF processing, in a Scanning Electron Microscope (SEM). The RF processing sessions included both High Peak Power (P ≤ 50 kW) pulsed processing, and low power (≤ 20 W) continuous wave processing. The experimental apparatus also included a thermometer array on the cavity outer wall, allowing temperature maps to characterize the emission before and after RF processing gains. Multiple sites have been located in cavities which showed improvements in cavity behavior due to RF processing. Several SEM-located sites can be correlated with changes in thermometer signals, indicating a direct relationship between the surface site and emission reduction due to RF processing. Information gained from the SEM investigations and thermometry are used to enhance the theoretical model of RF processing

Advanced buck converter power supply ABCPS for APT

International Nuclear Information System (INIS)

Street, R.; Overett, T.; Bowles, E.

1998-01-01

The United States Department of Energy (DOE) is planning to fabricate an Accelerator for the Production of Tritium (APT) at their Savannah River Site, to provide Tritium for national defense. The 1700 million electron volt (MeV) proton beam accelerator will be powered by radio frequency (RF) klystrons. A direct current (DC) power supply is required for each of the approximately two hundred and fifty 1-megawatt (MW) continuous wave klystrons in the RF power system. The requirements are that the power supply meet output performance specifications, provide fault protection for the klystron, have high efficiency, high reliability, good maintainability, and be readily manufacturable. As the power supplies are one of the largest cost elements in the accelerator, a technology review was made to determine the most economical approach to satisfy the requirements. A switch-mode power supply employing a buck-regulator was identified as being potentially the lowest cost approach. As the switch represents a certain development risk, a small-scale prototype has been constructed for evaluation, and has resulted in the decision to fabricate a full-scale prototype power supply. A description of the hardware will be presented

The RF system of FELI

International Nuclear Information System (INIS)

Morii, Y.; Miyauchi, Y.; Koga, A.; Abe, H.; Keishi, T.; Bessho, I.; Tomimasu, T.

1994-01-01

FELI (Free Electron Laser Research Institute, Inc.) is constructing a Free Electron Laser facility covering from 20 μm (infra red region) to 0.35 μm (ultra violet region), using an S-band linac. The building will be completed in November 1993 and installation of the linac will start in December 1993. The linac consists of a thermoionic 0.5ns-pulse triggered gun, a 714 MHz SHB (subharmonic buncher), a 2856 MHz standing wave type buncher, and 7 ETL (Electrotechnical Laboratory) type accelerating sections. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) are operated in three pulse operation modes (pulse width and peak RF power); 24 μs - 24 MW, 12.5 μs - 34 MW, 0.5 μs - 70 MW. Each klystron modulator has the PFN consisting of 4 parallel networks of 24 capacitors and 24 inductors, and it has a line switch of an optical thyristor stack. These equipments are manufactured now, and an S-band klystron and modulator will be combined to test their performance at the works of NISSIN ELECTRIC Co. in October 1993. (author)

High-power RF window design for the PEP-II B Factory

International Nuclear Information System (INIS)

Neubauer, M.; Hodgson, J.; Ng, C.; Schwarz, H.; Skarpaas, K.; Kroll, N.; Rimmer, R.

1994-06-01

We describe the design of RF windows to transmit up to 500 kW CW to the PEP-II 476 MHz cavities. RF analysis of the windows using high-frequency simulation codes are described. These provide information about the power loss distribution in the ceramic and tim matching properties of the structure. Finite-element analyses of the resulting temperature distribution and thermal stresses are presented. Fabrication methods including a proposed scheme to compensate for thermal expansion s are discussed and hardware tests to validate this approach are described. The effects of surface coatings (intentional and otherwise) and the application of air cooling are considered

Two-Way Multiuser Mixed RF/FSO Relaying: Performance Analysis and Power Allocation

KAUST Repository

Al-Eryani, Yasser F.

2018-03-21

In this paper, the performance of two-way multiuser mixed radio frequency/free space optical (RF/FSO) relay networks with opportunistic user scheduling and asymmetric channel fading is studied. RF links are used to conduct data transmission between users and relay node, while a FSO link is used to conduct data transmission on the last-mile communication link between the relay node and base station. The RF links are assumed to follow a Rayleigh fading model, while the FSO links are assumed to follow a unified Gamma-Gamma atmospheric turbulence fading model with pointing error. First, closed-form expressions for the exact outage probability, asymptotic (high signal-to-noise ratio) outage probability, average symbol error rate, and average ergodic channel capacity are derived assuming a heterodyne detection scheme. The asymptotic results are used to conduct a power optimization algorithm where expressions for optimal transmission power values for the transmitting nodes are provided. Additionally, performance comparisons between the considered two-way-relaying (TWR) network and the oneway- relaying (OWR) network are provided and discussed. Also, the impact of several system parameters, including number of users, pointing errors, atmospheric turbulence conditions, and outage probability threshold on the overall network performance are investigated. All the theoretical results are validated by Monte Carlo simulations. The results show that the TWR scheme almost doubles the network ergodic capacity compared to that of the OWR scheme with the same outage performance. Additionally, it is shown that under weak-to-moderate weather turbulence conditions and small pointing error, the outage probability is dominated by the RF downlink with a neglected effect for the user selection process at the RF uplink transmission. However, for severe pointing error, the outage probability is dominated by the FSO uplink/downlink transmission.

Research on control function switch of nuclear power plant control room

International Nuclear Information System (INIS)

Mei Shibo; Mao Ting; Cheng Bo; Zhang Gang

2014-01-01

The nuclear power plant provides main control room (MCR) to the unit operators for the plant monitoring and control, and provides the remote shutdown station (RSS) as the back-up control room, which is used only when MCR is unavailable. The RSS could be used to monitor and control the plant, bring the plant into shutdown state and remove the residual heat. The command from MCR and RSS is blocked by each other and can not be executed at the same time. The operation mode switch function between MCR and RSS is carried out by MCR/RSS mode switches. The operation mode switch scheme of CPR1000, ERP and AP1000 were compared and researched, and some design bases for new nuclear power plant were submitted in this paper. These design bases could be referred during the design of control function switch for the new nuclear power plants, in order to put forward a more practical, simple, safe and convenient scheme. (authors)

Phase shift PWM with double two-switch bridge for high power capacitor charging

International Nuclear Information System (INIS)

Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

2013-01-01

Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

Study of Pulsed vs. RF Plasma Properties for Surface Processing Applications

Science.gov (United States)

Tang, Ricky; Hopkins, Matthew; Barnat, Edward; Miller, Paul

2015-09-01

The ability to manipulate the plasma parameters (density, E/N) was previously demonstrated using a double-pulsed column discharge. Experiments extending this to large-surface plasmas of interest to the plasma processing community were conducted. Differences between an audio-frequency pulsed plasma and a radio-frequency (rf) discharge, both prevalent in plasma processing applications, were studied. Optical emission spectroscopy shows higher-intensity emission in the UV/visible range for the pulsed plasma comparing to the rf plasma at comparable powers. Data suggest that the electron energy is higher for the pulsed plasma leading to higher ionization, resulting in increased ion density and ion flux. Diode laser absorption measurements of the concentration of the 1S5 metastable and 1S4 resonance states of argon (correlated with the plasma E/N) provide comparisons between the excitation/ionization states of the two plasmas. Preliminary modeling efforts suggest that the low-frequency polarity switch causes a much more abrupt potential variation to support interesting transport phenomena, generating a ``wave'' of higher temperature electrons leading to more ionization, as well as ``sheath capture'' of a higher density bolus of ions that are then accelerated during polarity switch.

High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

International Nuclear Information System (INIS)

Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

1991-01-01

Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

DC switching regulated power supply for driving an inductive load

Science.gov (United States)

Dyer, George R.

1986-01-01

A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

Markov switching of the electricity supply curve and power prices dynamics

Science.gov (United States)

Mari, Carlo; Cananà, Lucianna

2012-02-01

Regime-switching models seem to well capture the main features of power prices behavior in deregulated markets. In a recent paper, we have proposed an equilibrium methodology to derive electricity prices dynamics from the interplay between supply and demand in a stochastic environment. In particular, assuming that the supply function is described by a power law where the exponent is a two-state strictly positive Markov process, we derived a regime switching dynamics of power prices in which regime switches are induced by transitions between Markov states. In this paper, we provide a dynamical model to describe the random behavior of power prices where the only non-Brownian component of the motion is endogenously introduced by Markov transitions in the exponent of the electricity supply curve. In this context, the stochastic process driving the switching mechanism becomes observable, and we will show that the non-Brownian component of the dynamics induced by transitions from Markov states is responsible for jumps and spikes of very high magnitude. The empirical analysis performed on three Australian markets confirms that the proposed approach seems quite flexible and capable of incorporating the main features of power prices time-series, thus reproducing the first four moments of log-returns empirical distributions in a satisfactory way.

Charge-Domain Signal Processing of Direct RF Sampling Mixer with Discrete-Time Filters in Bluetooth and GSM Receivers

Directory of Open Access Journals (Sweden)

2006-01-01

Full Text Available RF circuits for multi-GHz frequencies have recently migrated to low-cost digital deep-submicron CMOS processes. Unfortunately, this process environment, which is optimized only for digital logic and SRAM memory, is extremely unfriendly for conventional analog and RF designs. We present fundamental techniques recently developed that transform the RF and analog circuit design complexity to digitally intensive domain for a wireless RF transceiver, so that it enjoys benefits of digital and switched-capacitor approaches. Direct RF sampling techniques allow great flexibility in reconfigurable radio design. Digital signal processing concepts are used to help relieve analog design complexity, allowing one to reduce cost and power consumption in a reconfigurable design environment. The ideas presented have been used in Texas Instruments to develop two generations of commercial digital RF processors: a single-chip Bluetooth radio and a single-chip GSM radio. We further present details of the RF receiver front end for a GSM radio realized in a 90-nm digital CMOS technology. The circuit consisting of low-noise amplifier, transconductance amplifier, and switching mixer offers 32.5 dB dynamic range with digitally configurable voltage gain of 40 dB down to 7.5 dB. A series of decimation and discrete-time filtering follows the mixer and performs a highly linear second-order lowpass filtering to reject close-in interferers. The front-end gains can be configured with an automatic gain control to select an optimal setting to form a trade-off between noise figure and linearity and to compensate the process and temperature variations. Even under the digital switching activity, noise figure at the 40 dB maximum gain is 1.8 dB and +50 dBm IIP2 at the 34 dB gain. The variation of the input matching versus multiple gains is less than 1 dB. The circuit in total occupies 3.1 mm 2 . The LNA, TA, and mixer consume less than 15.3 mA at a supply voltage of 1.4 V.

Charge-Domain Signal Processing of Direct RF Sampling Mixer with Discrete-Time Filters in Bluetooth and GSM Receivers

Directory of Open Access Journals (Sweden)

Ho Yo-Chuol

2006-01-01

Full Text Available RF circuits for multi-GHz frequencies have recently migrated to low-cost digital deep-submicron CMOS processes. Unfortunately, this process environment, which is optimized only for digital logic and SRAM memory, is extremely unfriendly for conventional analog and RF designs. We present fundamental techniques recently developed that transform the RF and analog circuit design complexity to digitally intensive domain for a wireless RF transceiver, so that it enjoys benefits of digital and switched-capacitor approaches. Direct RF sampling techniques allow great flexibility in reconfigurable radio design. Digital signal processing concepts are used to help relieve analog design complexity, allowing one to reduce cost and power consumption in a reconfigurable design environment. The ideas presented have been used in Texas Instruments to develop two generations of commercial digital RF processors: a single-chip Bluetooth radio and a single-chip GSM radio. We further present details of the RF receiver front end for a GSM radio realized in a 90-nm digital CMOS technology. The circuit consisting of low-noise amplifier, transconductance amplifier, and switching mixer offers dB dynamic range with digitally configurable voltage gain of 40 dB down to dB. A series of decimation and discrete-time filtering follows the mixer and performs a highly linear second-order lowpass filtering to reject close-in interferers. The front-end gains can be configured with an automatic gain control to select an optimal setting to form a trade-off between noise figure and linearity and to compensate the process and temperature variations. Even under the digital switching activity, noise figure at the 40 dB maximum gain is 1.8 dB and dBm IIP2 at the 34 dB gain. The variation of the input matching versus multiple gains is less than 1 dB. The circuit in total occupies 3.1 . The LNA, TA, and mixer consume less than mA at a supply voltage of 1.4 V.

Switching power supplies with multiple isolated output and unitary power factor with an only switch; Fonte chaveada com multiplas saidas isoladas e fator de potencia unitario com um unico interruptor

Energy Technology Data Exchange (ETDEWEB)

Canesin, Carlos Alberto

1990-09-01

The analysis and implementation of switching power supplies with multiple output, through the use of the D C/D C Single Ended Primary Inductance Converter - SEPIC is presented. The structure has a single switch mode processing stage, improved input power factor, with the use of the variable current hysteresis control, or, constant on time control. The analysis of the D C/D C SEPIC, output characteristics and computer simulation is presented. A switching power supply practical design and experimental results are presented to demonstrate the validity of the theoretical analysis. (author)

High RF power test of a CFC antenna module for lower hybrid current drive

International Nuclear Information System (INIS)

Maebara, S.; Seki, M.; Ikeda, Y.; Kiyono, K.; Suganuma, K.; Imai, T.; Goniche, M.; Bibet, Ph.; Brossaud, J.; Cano, V.; Kazarian-Vibert, F.; Froissard, P.; Rey, G.

1998-01-01

A mock-up of a 3.7 GHz Lower Hybrid Current Drive (LHCD) antenna module was fabricated from Carbon Fibre Composite (CFC) for the development of heat resistive low Z front facing the plasma. This 2 divided waveguide module is made from CFC plates and rods which are Cu-plated to reduce the RF losses. The withstand-voltage, the RF properties and the outgassing rates for long pulses and high RF power were tested at the Lower Hybrid test bed facility of Cadarache. A reference module made from Dispersion Strengthened Copper (DSC) was also fabricated. After the short pulse conditioning, long pulses with a power density ranging between 50 and 150 MW/m 2 were performed with no breakdowns on the CFC module. It was also checked that the highest power density, up to 150 MW/m 2 , could be transmitted when the waveguides are filled with H2 at a pressure of 5 x 10 -2 Pa. During a long pulse, the power reflection coefficient remains low in the 0.8-1.3 % range and no significant change in the reflection coefficient is measured after the thermal cycling provided by the long pulse operation. From thermocouple measurements, RF losses of the copper coated CFC and the DSC modules were compared. No significant differences were measured. From pressure measurements, it was found that the outgassing rate of Cu-plated CFC is about 6-7 times larger than of DSC at 300 deg.C. It is concluded that a CFC module is an attractive candidate for the hardening of the tip of the LHCD antenna. (author)

Float level switch for a nuclear power plant containment vessel

International Nuclear Information System (INIS)

Powell, J.G.

1993-01-01

This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures

Float level switch for a nuclear power plant containment vessel

Science.gov (United States)

Powell, James G.

1993-01-01

This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

A dual-stimuli-responsive fluorescent switch ultrathin film

Science.gov (United States)

Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

2015-10-01

Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP

Design and development of bipolar 4-quadrant switch-mode power converter for superconducting magnets

International Nuclear Information System (INIS)

Yashwant Kumar; Thakur, S.K.; Ghosh, M.K.; Tiwari, T.P.; De, Anirban; Kumari, S.; Saha, S.

2011-01-01

A uniform zero crossing magnetic field in a magnet can be achieved by using bipolar power converter with four quadrant operation. A high current bipolar switch-mode power converter (rated ±27 V max , ±7V flat top, ±300A, 100 ppm) has been designed and developed indigenously at VECC Kolkata. Four quadrants operation is accomplished by using power IGBTs in an H-bridge configuration with switching frequency around 20 kHz. The switch-mode power converter is used because of high dynamic response, low output ripple, high efficiency and low input current harmonics. In this paper, circuit topology, function of system components and key system specifications of high current bipolar switch mode power converter is discussed. (author)

Problems and solutions of the IFSMTF power and switch system

International Nuclear Information System (INIS)

Wood, R.J.; Wintenberg, R.E.; Googe, J.M.; Nickels, L.E.

1985-01-01

Solutions have been found for the problems encountered with the coil power and switching systems of the International Fusion Superconducting Magnet Test Facility (IFSMTF). The coil power system provides the filtered dc sources (+- 12 V dc; 25,000 A) for charging and discharging the coils of the IFSMTF experiment. The switching system provides the means of transferring the coil current into a dump resistor when a rapid discharge of a coil is required due to a coil failure (quench) or other system abnormalities

Modeling and forecasting of wind power generation - Regime-switching approaches

DEFF Research Database (Denmark)

Trombe, Pierre-Julien

The present thesis addresses a number of challenges emerging from the increasing penetration of renewable energy sources into power systems. Focus is placed on wind energy and large-scale offshore wind farms. Indeed, offshore wind power variability is becoming a serious obstacle to the integration...... of more renewable energy into power systems since these systems are subjected to maintain a strict balance between electricity consumption and production, at any time. For this purpose, wind power forecasts offer an essential support to power system operators. In particular, there is a growing demand...... case study is the Horns Rev wind farm located in the North Sea. Regime-switching aspects of offshore wind power fluctuations are investigated. Several formulations of Markov-Switching models are proposed in order to better characterize the stochastic behavior of the underlying process and improve its...

OFDM RF power-fading circumvention for long-reach WDM-PON.

Science.gov (United States)

Chow, C W; Yeh, C H; Sung, J Y

2014-10-06

We propose and demonstrate an orthogonal frequency division multiplexing (OFDM) radio-frequency (RF) power-fading circumvention scheme for long-reach wavelength-division-multiplexed passive-optical-network (LR-WDM-PON); hence the same capacity of 40 Gb/s can be provided to all the optical-networking-units (ONUs) in the LR-WDM-PON. Numerical analysis and proof-of-concept experiment are performed.

Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

International Nuclear Information System (INIS)

Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

2013-01-01

A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

Hybrid silicon mode-locked laser with improved RF power by impedance matching

Science.gov (United States)

Tossoun, Bassem; Derickson, Dennis; Srinivasan, Sudharsanan; Bowers, John

2015-02-01

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

Ultracompact Implantable Design With Integrated Wireless Power Transfer and RF Transmission Capabilities.

Science.gov (United States)

Sun, Guilin; Muneer, Badar; Li, Ying; Zhu, Qi

2018-04-01

This paper presents an ultracompact design of biomedical implantable devices with integrated wireless power transfer (WPT) and RF transmission capabilities for implantable medical applications. By reusing the spiral coil in an implantable device, both RF transmission and WPT are realized without the performance degradation of both functions in ultracompact size. The complete theory of WPT based on magnetic resonant coupling is discussed and the design methodology of an integrated structure is presented in detail, which can guide the design effectively. A system with an external power transmitter and implantable structure is fabricated to validate the proposed approach. The experimental results show that the implantable structure can receive power wirelessly at 39.86 MHz with power transfer efficiency of 47.2% and can also simultaneously radiate at 2.45 GHz with an impedance bandwidth of 10.8% and a gain of -15.71 dBi in the desired direction. Furthermore, sensitivity analyses are carried out with the help of experiment and simulation. The results reveal that the system has strong tolerance to the nonideal conditions. Additionally, the specific absorption rate distribution is evaluated in the light of strict IEEE standards. The results reveal that the implantable structure can receive up to 115 mW power from an external transmitter and radiate 6.4 dB·m of power safely.

Medium and Short Wave RF Energy Harvester for Powering Wireless Sensor Networks.

Science.gov (United States)

Leon-Gil, Jesus A; Cortes-Loredo, Agustin; Fabian-Mijangos, Angel; Martinez-Flores, Javier J; Tovar-Padilla, Marco; Cardona-Castro, M Antonia; Morales-Sánchez, Alfredo; Alvarez-Quintana, Jaime

2018-03-03

Internet of Things (IoT) is an emerging platform in which every day physical objects provided with unique identifiers are connected to the Internet without requiring human interaction. The possibilities of such a connected world enables new forms of automation to make our lives easier and safer. Evidently, in order to keep billions of these communicating devices powered long-term, a self-sustainable operation is a key point for realization of such a complex network. In this sense, energy-harvesting technologies combined with low power consumption ICs eliminate the need for batteries, removing an obstacle to the success of the IoT. In this work, a Radio Frequency (RF) energy harvester tuned at AM broadcast has been developed for low consumption power devices. The AM signals from ambient are detected via a high-performance antenna-free LC circuit with an efficiency of 3.2%. To maximize energy scavenging, the RF-DC conversion stage is based on a full-wave Cockcroft-Walton voltage multiplier (CWVM) with efficiency up to 90%. System performance is evaluated by rating the maximum power delivered into the load via its output impedance, which is around 62 μW, although power level seems to be low, it is able to power up low consumption devices such as Leds, portable calculators and weather monitoring stations.

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

SMES based power modulator - status August 2001

International Nuclear Information System (INIS)

Juengst, K.P.; Gehring, R.; Kudymow, A.; Suess, E.

2001-10-01

Based on a superconducting magnetic energy storage (SMES) a long-pulse klystron modulator has been designed for use in the TESLA test facility (TTF) at DESY, Hamburg. A proto-type with an output power of 25 MW is under development at Forschungszentrum Karlsruhe in cooperation with the office of engineering lbK at Karlsruhe. Including a pulse transformer (1:13/11.5), the system will deliver pulses of 130 kV or 115 kV, 1.7 ms pulse length with a flat top of ± 0.5%, at a repetition rate up to 10 Hz. This new system's main features are a highly dynamic SMES (> 100 T/s), a high current power supply (rated 27 V/2.6 kA), a switched-mode high voltage power supply (rated 14 kV/45 A), a fast thyristor power switch for 2.6 kA approx. continuous current/ 2 ms break, an IGCT power switch rated 2.6 kA/14 kV, a protection switch unit and a system control unit. This demonstration system is to serve alternatively two klystrons of 5 MW RF output or one multibeam klystron of 10 MW RF output. A significant part of the components of the system has been built. A first set of the system components had been arranged to form a model of the modulator and 1 MW pulses were generated. The next large step in the area of the power electronic part is to increase the power of this test arrangement up to 10 MW. The SMES and its cryostat have undergone initial testing. The data acquisition and control system under development at DESY has been taken over and adjusted to our computer and experimental environment. (orig.)

Development of L-band pillbox RF window

International Nuclear Information System (INIS)

Takeuchi, Y.; Fukuda, S.; Hisamatsu, H.; Saito, Y.; Takahashi, A.

1994-01-01

A pillbox RF output window was developed for the L-band pulsed klystron for the Japanese Hadron Project (JHP) 1-GeV proton linac. The window was designed to withstand a peak RF power of 6 MW, where the pulse width is 600 μsec and the repetition rate is 50 Hz. A high power model was fabricated using an alumina ceramic which has a low loss tangent of 2.5x10 -5 . A high power test was successfully performed up to a 113 kW RF average power with a 4 MW peak power, a 565 μsec pulse width and a 50 Hz repetition rate. By extrapolating the data of this high power test, the temperature rise of the ceramic is estimated low enough at the full RF power of 6 MW. Thus this RF window is expected to satisfy the specifications of the L-band Klystron. (author)

Microfluidic stretchable RF electronics.

Science.gov (United States)

Cheng, Shi; Wu, Zhigang

2010-12-07

Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

The system of RF beam control for electron gun

International Nuclear Information System (INIS)

Barnyakov, A.M.; Levichev, A.E.; Chernousov, Yu.D.; Ivannikov, V.I.; Shebolaev, I.V.

2015-01-01

The system of RF control of three-electrode electron gun current is described. It consists of a source of microwave signal, coaxial line, coaxial RF switch and RF antenna lead. The system allows one to get the electron beam in the form of bunches with the frequency of the accelerating section to achieve the capture of particles in the acceleration mode close to 100%. The results of calculation and analysis of the elements of the system are presented. Characteristics of the devices are obtained experimentally. The results of using RF control in three-electrode electron gun at electron linear accelerator are described

Tuning magnet power supply

International Nuclear Information System (INIS)

Han, B.M.; Karady, G.G.; Thiessen, H.A.

1989-01-01

The particles in a Rapid Cycling Accelerator are accelerated by rf cavities, which are tuned by dc biased ferrite cores. The tuning is achieved by the regulation of bias current, which is produced by a power supply. The tuning magnet power supply utilizes a bridge circuit, supplied by a three phase rectifier. During the rise of the current, when the particles are accelerated, the current is controlled with precision by the bridge which operates a power amplifier. During the fall of the current, the bridge operates in a switching mode and recovers the energy stored in the ferrites. The recovered energy is stored in a capacitor bank. The bridge circuit is built with 150 power transistors. The drive, protection and control circuit were designed and built from commercial component. The system will be used for a rf cavity experiment in Los Alamos and will serve as a prototype tuning power supply for future accelerators. 1 ref., 7 figs

A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

Science.gov (United States)

Kasparek, W.; Petelin, M. I.; Shchegolkov, D. Yu; Erckmann, V.; Plaum, B.; Bruschi, A.; ECRH Groups at IPP Greifswald; Karlsruhe, FZK; Stuttgart, IPF

2008-05-01

A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented.

A fast switch, combiner and narrow-band filter for high-power millimetre wave beams

International Nuclear Information System (INIS)

Kasparek, W.; Plaum, B.; Petelin, M.I.; Shchegolkov, D.Yu; Erckmann, V.; Bruschi, A.

2008-01-01

A fast directional switch (FADIS) is described, which allows controlled switching of high-power microwaves between two outputs. A possible application could be synchronous stabilization of neoclassical tearing modes (NTMs). Generally, the device can be used to share the installed EC power between different types of launchers or different applications (e.g. in ITER, midplane/upper launcher). The switching is performed electronically without moving parts by a small frequency-shift keying of the gyrotron (some tens of megahertz), and a narrow-band diplexer. The device can be operated as a beam combiner also, which offers attractive transmission perspectives in multi-megawatt ECRH systems. In addition, these diplexers are useful for plasma diagnostic systems employing high-power sources due to their filter characteristics. The principle and the design of a four-port quasi-optical resonator diplexer is presented. Low-power measurements of switching contrast, mode purity and efficiency show good agreement with theory. Preliminary frequency modulation characteristics of gyrotrons are shown, and first results from high-power switching experiments using the ECRH system for W7-X are presented

Unity power factor switching regulator

Science.gov (United States)

Rippel, Wally E. (Inventor)

1983-01-01

A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

The Impact of Power Switching Devices on the Thermal Performance of a 10 MW Wind Power NPC Converter

Directory of Open Access Journals (Sweden)

Ke Ma

2012-07-01

Full Text Available Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance, these available power switching devices may have various thermal cycling behaviors, which will lead to converter solutions with very different cost, size and reliability performance. As a result, this paper aimed to investigate the thermal related characteristics of some important power switching devices. Their impact on the thermal cycling of a 10 MW three-level Neutral-Point-Clamped wind power converter is then evaluated under various operating conditions; the main focus will be on the grid connected inverter. It is concluded that the thermal performances of the 3L-NPC wind power converter can be significantly changed by the power device technology as well as their parallel configurations.

Power loss benchmark of nine-switch converters in three-phase online-UPS application

DEFF Research Database (Denmark)

Qin, Zian; Loh, Poh Chiang; Blaabjerg, Frede

2014-01-01

Three-phase online-UPS is an appropriate application for the nine-switch converter, where its high voltage stress of the power device caused by the reduced switch feature can be relieved significantly. Its power loss and loss distribution still have the flexibility from the control point of view...... as parameters like modulation index and phase angle of the load are taken into account. The benchmark of power loss will become a guidance for the users to make best use of the advantages and bypass the disadvantages of nine-switch converters. The results are finally verified on a 1.5 kW prototype....

Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

KAUST Repository

Obeed, Mohanad

2018-01-15

In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\\\access point (AP) and multiple VLC\\\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

Joint Load Balancing and Power Allocation for Hybrid VLC/RF Networks

KAUST Repository

Obeed, Mohanad; Salhab, Anas M.; Zummo, Salam A.; Alouini, Mohamed-Slim

2018-01-01

In this paper, we propose and study a new joint load balancing (LB) and power allocation (PA) scheme for a hybrid visible light communication (VLC) and radio frequency (RF) system consisting of one RF\\access point (AP) and multiple VLC\\APs. An iterative algorithm is proposed to distribute the users on the APs and distribute the powers of these APs on their users. In PA subproblem, an optimization problem is formulated to allocate the power of each AP to the connected users for the total achievable data rates maximization. It is proved that the PA optimization problem is concave but not easy to tackle. Therefore, we provide a new algorithm to obtain the optimal dual variables after formulating them in terms of each other. Then, the users that are connected to the overloaded APs and receive less data rates start seeking for other APs that offer higher data rates. Users with lower data rates continue re-connecting from AP to other to balance the load only if this travel increases the summation of the achievable data rates and enhances the system fairness. The numerical results demonstrate that the proposed algorithms improve the system capacity and system fairness with fast convergence.

Rectifier Design Challenges for RF Wireless Power Transfer and Energy Harvesting Systems

Directory of Open Access Journals (Sweden)

A. Collado

2017-06-01

Full Text Available The design of wireless power transfer (WPT and energy harvesting (EH solutions poses different challenges towards achieving maximum RF-DC conversion efficiency in these systems. This paper covers several selected challenges when developing WPT and electromagnetic EH solutions, such as the design of multiband and broadband rectifiers, the minimization of the effect that load and input power variations may have on the system performance and finally the most optimum power combining mechanisms that can be used when dealing with multi-element rectifiers.

Fiber-Optic Pyrometer with Optically Powered Switch for Temperature Measurements.

Science.gov (United States)

Vázquez, Carmen; Pérez-Prieto, Sandra; López-Cardona, Juan D; Tapetado, Alberto; Blanco, Enrique; Moreno-López, Jorge; Montero, David S; Lallana, Pedro C

2018-02-06

We report the experimental results on a new infrared fiber-optic pyrometer for very localized and high-speed temperature measurements ranging from 170 to 530 °C using low-noise photodetectors and high-gain transimpedance amplifiers with a single gain mode in the whole temperature range. We also report a shutter based on an optical fiber switch which is optically powered to provide a reference signal in an optical fiber pyrometer measuring from 200 to 550 °C. The tests show the potential of remotely powering via optical means a 300 mW power-hungry optical switch at a distance of 100 m, avoiding any electromagnetic interference close to the measuring point.

Fiber-Optic Pyrometer with Optically Powered Switch for Temperature Measurements

Directory of Open Access Journals (Sweden)

Carmen Vázquez

2018-02-01

Full Text Available We report the experimental results on a new infrared fiber-optic pyrometer for very localized and high-speed temperature measurements ranging from 170 to 530 °C using low-noise photodetectors and high-gain transimpedance amplifiers with a single gain mode in the whole temperature range. We also report a shutter based on an optical fiber switch which is optically powered to provide a reference signal in an optical fiber pyrometer measuring from 200 to 550 °C. The tests show the potential of remotely powering via optical means a 300 mW power-hungry optical switch at a distance of 100 m, avoiding any electromagnetic interference close to the measuring point.

Modular hot swappable 50 V, 700 A DC power supply with active redundancy

International Nuclear Information System (INIS)

Badapanda, M.K.; Upadhyay, R.; Tripathi, A.; Tyagi, R.K.; Lad, M.

2015-01-01

A 50 V, 700 A voltage regulated modular hot swappable DC power supply has been designed and developed to bias 32 numbers of 500 W, 505.8 MHz solid state RF amplifiers for Indus-2 RF system. This power supply employs 7 numbers of 50 V, 100 A power modules which are operated in parallel and share load current equally. Active redundancy with hot swappable features incorporated in this power supply isolates the faulty module and facilitates its online replacement without affecting the operation of RF amplifiers, thereby significantly reducing the down time of the overall system. Each power module has inbuilt harmonics and power factor correction stage to improve its input performance parameters. This power supply has a dedicated controller, which monitors the healthiness of 32 numbers of RF amplifiers and 7 numbers of power modules, controls the equal sharing of load current among these modules as well as isolates the faulty RF amplifiers and power modules. The control system allows the user to set the trip limits for bias current of individual RF amplifier, power module currents and total power supply current independently for effective protection of the overall system. Issues related to EMI and high frequency switching noises are suitably taken care of in this power supply. The crucial parameters of this power supply are displayed on a local LCD panel as well as on remote PC via ethernet communication. This paper compares the availability and reliability of this hot swappable power supply with the configuration involving one dedicated power supply for each RF amplifier. The performance parameters of this power supply tested with solid state RF amplifiers are also presented in this paper. (author)

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

International Nuclear Information System (INIS)

Manjula, J.; Malarvizhi, S.

2014-01-01

This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented. (semiconductor integrated circuits)

DC switch power supply for vacuum-arc coatings deposition

International Nuclear Information System (INIS)

Zalesskij, D.Yu.; Volkov, Yu.Ya.; Vasil'ev, V.V.; Kozhushko, V.V.; Luchaninov, A.A.; Strel'nitskij, V.E.

2008-01-01

Special DC Switch Power Supply for vacuum-arc deposition was developed and tested in the mode of depositing Al and AlN films. Maximum output power was 6 kW, maximum output current - 120 A, open-circuit voltage - 150 V. The Power Supply allows to adjust and stabilize output current in a wide range. Testing of the Power Supply revealed an advantages over the standard 'Bulat-6' power supply, especially for deposition of non-conductive AlN films.

The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

Science.gov (United States)

Papaioannou, George

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

Module Integrated GaN Power Stage for High Switching Frequency Operation

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold

2017-01-01

is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage. The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz......An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone...... of the targets for next generation power converters. Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage...

Advanteges of using Two-Switch Forward in Single-Stage Power Factor Corrected Power Supplies

DEFF Research Database (Denmark)

Petersen, Lars

2000-01-01

A single-Stage power factor corrected power supply using a two-switch forward is proposed to increase efficiency. The converter is operated in the DCM (Discontinues Conduction Mode). This will insure the intermediate DC-bus to be controlled only by means of circuit parameters and therefore...... power supply has been implemented. The measured efficiency and power factor are about 87% and 0.96 respectively....

New solid state opening switches for repetitive pulsed power technology

Energy Technology Data Exchange (ETDEWEB)

Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

1997-12-31

In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

Operational Performance and Improvements to the RF Power Sources for the Compact Linear Collider Test Facility (CTF3) at CERN

CERN Document Server

McMonagle, Gerard

2006-01-01

The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

Operational performance and improvements to the rf power sources for the Compact Linear Collider Test Facility (CTF3) at CERN

CERN Document Server

McMonagle, Gerard

2006-01-01

The CERN CTF3 facility is being used to test and demonstrate key technical issues for the CLIC (Compact Linear Collider) study. Pulsed RF power sources are essential elements in this test facility. Klystrons at S-band (29998.55 GHz), in conjunction with pulse compression systems, are used to power the Drive Beam Accelerator (DBA) to achieve an electron beam energy of 150 MeV. The L-Band RF system, includes broadband Travelling Wave Tubes (TWTs) for beam bunching with 'phase coded' sub pulses in the injector and a narrow band high power L-Band klystron powering the transverse 1.5 GHz RF deflector in the Delay Loop immediately after the DBA. This paper describes these different systems and discusses their operational performance.

High voltage power supplies for ITER RF heating and current drive systems

International Nuclear Information System (INIS)

Gassmann, T.; Arambhadiya, B.; Beaumont, B.; Baruah, U.K.; Bonicelli, T.; Darbos, C.; Purohit, D.; Decamps, H.; Albajar, F.; Gandini, F.; Henderson, M.; Kazarian, F.; Lamalle, P.U.; Omori, T.; Parmar, D.; Patel, A.; Rathi, D.; Singh, N.P.

2011-01-01

The RF heating and current drive (H and CD) systems to be installed for the ITER fusion machine are the electron cyclotron (EC), ion cyclotron (IC) and, although not in the first phase of the project, lower hybrid (LH). These systems require high voltage, high current power supplies (HVPS) in CW operation. These HVPS should deliver around 50 MW electrical power to each of the RF H and CD systems with stringent requirements in terms of accuracy, voltage ripple, response time, turn off time and fault energy. The PSM (Pulse Step Modulation) technology has demonstrated over the past 20 years its ability to fulfill these requirements in many industrial facilities and other fusion reactors and has therefore been chosen as reference design for the IC and EC HVPS systems. This paper describes the technical specifications, including interfaces, the resulting constraints on the design, the conceptual design proposed for ITER EC and IC HVPS systems and the current status.

Iaverage current mode (ACM) control for switching power converters

OpenAIRE

2014-01-01

Providing a fast current sensor direct feedback path to a modulator for controlling switching of a switched power converter in addition to an integrating feedback path which monitors average current for control of a modulator provides fast dynamic response consistent with system stability and average current mode control. Feedback of output voltage for voltage regulation can be combined with current information in the integrating feedback path to limit bandwidth of the voltage feedback signal.

High-power CO laser with RF discharge for isotope separation employing condensation repression

Science.gov (United States)

Baranov, I. Ya.; Koptev, A. V.

2008-10-01

High-power CO laser can be the effective tool in such applications as isotope separation using the free-jet CRISLA method. The way of transfer from CO small-scale experimental installation to industrial high-power CO lasers is proposed through the use of a low-current radio-frequency (RF) electric discharge in a supersonic stream without an electron gun. The calculation model of scaling CO laser with RF discharge in supersonic stream was developed. The developed model allows to calculate parameters of laser installation and optimize them with the purpose of reception of high efficiency and low cost of installation as a whole. The technical decision of industrial CO laser for isotope separation employing condensation repression is considered. The estimated cost of laser is some hundred thousand dollars USA and small sizes of laser head give possibility to install it in any place.

High temperature stable RF MEMS microwave switches

OpenAIRE

Klein, Stefan

2010-01-01

Im Rahmen dieser Arbeit wurden elektrostatisch angesteuerte RF-MEMS Schalter mit kapazitiver Kopplung entwickelt, die Prozesstemperaturen von 400°C und darüber hinaus ohne Verlust der Funktionstüchtigkeit überstehen. Als Funktionsmaterial wird einerseits eine AlSiCu und andererseits eine WTi Legierung verwendet. Das Schalterprinzip beruht auf dem Wanderkeileffekt, der einen gekrümmten Biegebalken nutzt. Diese Verbiegung weg von der Substratoberfläche, die durch einen wohldefinierten intri...

Soft switching buck-boost converter for photovoltaic power generation; Taiyoko hatsuden no tame no soft switching shokoatsu converter

Energy Technology Data Exchange (ETDEWEB)

Lee, H. [Kyungnam University (Korea, Republic of)

1996-10-27

A soft switching method with small switching loss was proposed for the purpose of increasing the efficiency of a DC-DC boost converter which converted a DC current generated by solar cells to a variable DC current. Existing current converters are supplemented by using a snubber circuit around the switch so as to protect the switch by a hard switching action. However, with an increase of the output current, snubber loss is increased, reducing the efficiency. In order to solve this problem, the partial resonant switch method was applied to the converter; with this method of partially forming a resonant circuit only at the time of turning on/off of the switch, the switching loss was reduced through the soft switching, thereby making the proposed converter operate with high efficiency. Moreover, the resonant element of the partial resonant circuit using a snubber condenser, the energy accumulated in the condenser was regenerated on the power supply side without loss of snubber. With the regenerated energy, the proposed converter was provided with a smaller ratio of switching to use than the conventional converter. 4 refs., 7 figs., 1 tab.

Very High Frequency Switch-Mode Power Supplies.:Miniaturization of Power Electronics.

OpenAIRE

Madsen, Mickey Pierre; Andersen, Michael A. E.; Knott, Arnold

2015-01-01

The importance of technology and electronics in our daily life is constantly increasing. At the same time portability and energy efficiency are currently some of the hottest topics. This creates a huge need for power converters in a compact form factor and with high efficiency, which can supply these electronic devices. This calls for new technologies in order to miniaturize the power electronics of today. One way to do this is by increasing the switching frequency dramatically and develop ve...

Current-Driven Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

2012-01-01

The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

Simulation experiment on low-level RF control for dual-harmonic acceleration at CSNS RCS

International Nuclear Information System (INIS)

Shen Sirong; Li Xiao; Zhang Chunlin; Sun Hong; Tang Jingyu

2013-01-01

The design and test of the low-level RF (LLRF) control system for the dual-harmonic acceleration at the rapid cycling synchrotron (RCS) of China Spallation Neutron Source (CSNS) at phase Ⅰ is introduced. In order to implement the mode switch from the second harmonic to the fundamental during the acceleration cycle for one of the eight RF cavities, the LLRF system for the cavity has been designed differently from the others. Several technical measures such as the opening of the control loops during the mode switch and the reclosing of two tuning circuits of the RF amplifier at different moments, have been taken. The experimental results on the testing platform based on an RF prototype show good dynamic performance of the LLRF system and prove the feasibility of dual-harmonic operation. (authors)

High voltage power supplies for INDUS-2 RF system

International Nuclear Information System (INIS)

Badapanda, M.K.; Hannurkar, P.R.

2003-01-01

The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

International Nuclear Information System (INIS)

Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

1990-01-01

A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

Radio frequency-assisted fast superconducting switch

Science.gov (United States)

Solovyov, Vyacheslav; Li, Qiang

2017-12-05

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

Science.gov (United States)

2010-10-01

... 49 Transportation 9 2010-10-01 2010-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

Investigations of DC power supplies with optoelectronic transducers and RF energy converters

Science.gov (United States)

Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

2016-04-01

Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

Directory of Open Access Journals (Sweden)

E. Adli

2011-08-01

Full Text Available We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter regime of CLIC.

X-band rf power production and deceleration in the two-beam test stand of the Compact Linear Collider test facility

CERN Document Server

Adli, E; Dubrovskiy, A; Syratchev, I; Ruber, R; Ziemann, V

2011-01-01

We discuss X-band rf power production and deceleration in the two-beam test stand of the CLIC test facility at CERN. The rf power is extracted from an electron drive beam by a specially designed power extraction structure. In order to test the structures at high-power levels, part of the generated power is recirculated to an input port, thus allowing for increased deceleration and power levels within the structure. The degree of recirculation is controlled by a splitter and phase shifter. We present a model that describes the system and validate it with measurements over a wide range of parameters. Moreover, by correlating rf power measurements with the energy lost by the electron beam, as measured in a spectrometer placed after the power extraction structure, we are able to identify system parameters, including the form factor of the electron beam. The quality of the agreement between model and reality gives us confidence to extrapolate the results found in the present test facility towards the parameter reg...

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

International Nuclear Information System (INIS)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-01-01

The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

Science.gov (United States)

Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

2005-05-01

The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

Influence of RF power on the properties of sputtered ZnO:Al thin films

Energy Technology Data Exchange (ETDEWEB)

Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

2010-07-15

Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

A highly sensitive RF-to-DC power converter with an extended dynamic range

KAUST Repository

Almansouri, Abdullah Saud Mohammed; Ouda, Mahmoud H.; Salama, Khaled N.

2017-01-01

This paper proposes a highly sensitive RF-to-DC power converter with an extended dynamic range that is designed to operate at the medical band 433 MHz and simulated using 0.18 μm CMOS technology. Compared to the conventional fully cross

An updated overview of the LEB RF system

International Nuclear Information System (INIS)

Rogers, J.D.; Ferrell, J.H.; Curbow, J.E.; Friedrichs, C.

1992-01-01

Each of the Low Energy Booster (LEB) rf systems consists of the following major subsystems: a vacuum tube final rf amplifier driven by a solid state rf amplifier, a ferrite-tuned rf cavity used to bunch and accelerate the beam, a low-level rf system including rf feedback systems, a computer-based supervisory control system, and associated power supplies. The LEB rf system is broadband with the exception of the rf cavity, which is electronically tuned from approximately 47.5 MHz to 59.7 MHz in 50 ms. The design and development status of the LEB rf system is presented, with particular emphasis on the cavity and tuner, and the tuner bias power supply

Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

International Nuclear Information System (INIS)

Chen, Zukun

2011-01-01

A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

Energy Technology Data Exchange (ETDEWEB)

Chen, Zukun [Los Alamos National Laboratory

2011-01-01

A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

Design, construction and test of RF solid state power amplifier for IRANCYC-10

Science.gov (United States)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film

Directory of Open Access Journals (Sweden)

Accarat Chaoumead

2012-01-01

Full Text Available Transparent conductive titanium-doped indium oxide (ITiO films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4  Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4  Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.