Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

Directory of Open Access Journals (Sweden)

Yanbin Hou

2016-01-01

Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

Final amplifier design and mercury

International Nuclear Information System (INIS)

Rose, E.A.; Hanson, D.E.

1991-01-01

The final amplifier for the Mercury KrF excimer facility is being designed. The design exercise involves extensive modeling to predict amplifier performance. Models of the pulsed-power system, including a Child-Langmuir diode with closure, electron-beam energy deposition, KrF laser kinetics, amplified spontaneous emission (ASE), a time-dependent laser extraction in the presence of ASE are presented as a design package. The design exercise indicates that the energy objective of Phase I -- 100 joules -- will be met

HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

International Nuclear Information System (INIS)

2005-01-01

Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

Advances in high-power rf amplifiers

International Nuclear Information System (INIS)

Tallerico, P.J.

1979-01-01

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

2015-01-01

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

Class-E Amplifier Design Improvements for GSM Frequencies

Directory of Open Access Journals (Sweden)

Z. Nadir

2011-06-01

Full Text Available Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is the continuation of previous work by the authors. These nonlinear power amplifiers can only amplify constant-envelope RF signals without introducing significant distortion. Mobile systems such as Advanced Mobile Phone System (AMPS and Global System for Mobile communications (GSM use modulation schemes which generate constant amplitude RF outputs in order to use efficient but nonlinear power amplifiers. Improvements in designs are suggested and higher efficiencies are achieved, to the tune of 67.1% (for 900 MHz and 67.0% (1800 MHz.

GaN-based Power amplifiers for microwave applications

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2016-01-01

Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

The design study of the high power solid-state amplifier in S-band

International Nuclear Information System (INIS)

Tozyo, E.; Kobayashi, K.; Yoshida, K.

1976-01-01

We have designed the 500W high power solid-state amplifier for the microwave system of INS electron linac. In this design study the output pulse power level of each module is set as possible as high, so the total number of elements is well reduced within the present microwave technics. In comparison with TWTA highly stabilized and maintenance-free operations are expected with 5 years' MTF. (auth.)

Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

Directory of Open Access Journals (Sweden)

M. Schleyer

2017-09-01

Full Text Available This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

CMOS 60-GHz and E-band power amplifiers and transmitters

CERN Document Server

Zhao, Dixian

2015-01-01

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

Directory of Open Access Journals (Sweden)

Zhiqun Cheng

2017-01-01

Full Text Available The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

CERN Document Server

Božanić, Mladen

2016-01-01

This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

Multilevel tracking power supply for switch-mode audio power amplifiers

DEFF Research Database (Denmark)

Iversen, Niels Elkjær; Lazarevic, Vladan; Vasic, Miroslav

2018-01-01

to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured results show that systems employing envelope tracking can improve system efficiency from 2% to 12%, i.e. a factor of 6. The temperature rise is strongly reduced, especially for the switching power MOSFETs where......Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques...

Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

Science.gov (United States)

Thakur, S. K.; Kumar, Y.

2018-05-01

This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom K.

2012-01-01

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

High-power piezo drive amplifier for large stack and PFC applications

Science.gov (United States)

Clingman, Dan J.; Gamble, Mike

2001-08-01

This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

Design of a power amplifier for wireless communications using microstrip technology and Microwave Office

Directory of Open Access Journals (Sweden)

Christian Tipantuña

2015-12-01

Full Text Available This paper provides a detailed description and all the procedures involved in designing a power amplifier using microstrip technology and the design software Microwave OfficeTM. Specifically, the design is oriented to build an amplifier with central frequency at 14 GHz, but the same fundamentals and principles could be applied in the whole range of radio frequency. For the design, a MESFET transistor and simultaneous input and output matching networks are considered. The values of the parameters and the simulation for every stage are computed and performed using AWR Microwave OfficeTM. At the end of the document, a fully functional circuit layout represented in 2D and 3D is shown with all their complementary elements

Design of mm-wave InP DHBT power amplifiers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Yan, Lei

2011-01-01

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

A high-power compact regenerative amplifier FEL

International Nuclear Information System (INIS)

Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

1997-01-01

The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

International Nuclear Information System (INIS)

Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

2010-01-01

This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

Embedded control system for high power RF amplifiers

International Nuclear Information System (INIS)

Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

2011-01-01

RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

International Nuclear Information System (INIS)

Vladimir Popov

2003-01-01

A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Energy Technology Data Exchange (ETDEWEB)

Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

2012-01-01

The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

NARCIS (Netherlands)

Acar, M.

2011-01-01

In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

A broadband high-efficiency Doherty power amplifier using symmetrical devices

Science.gov (United States)

Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

2018-04-01

This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

Class H power amplifier for power saving in fluxgate current transducers

OpenAIRE

Velasco Quesada, Guillermo; Román Lumbreras, Manuel; Pérez Delgado, Raul; Conesa Roca, Alfons

2016-01-01

This paper presents a new improvement in the design of a fluxgate-based current transducer in order to reduce the power consumption of control electronics. The proposed improvement involves the replacement of the output linear amplifier of the transducer by a class H amplifier. The output amplifier is devoted to the magnetic flux compensation and generates the transducer output current, which is proportional to the current to be measured. In this way, it is possible to reduce significantly th...

5 Watt GaN HEMT Power Amplifier for LTE

Directory of Open Access Journals (Sweden)

K. Niotaki

2014-04-01

Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

Empirical multichannel power consumption model for erbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

2015-01-01

In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

A high efficiency PWM CMOS class-D audio power amplifier

Energy Technology Data Exchange (ETDEWEB)

Zhu Zhangming; Liu Lianxi; Yang Yintang [Institute of Microelectronics, Xidian University, Xi' an 710071 (China); Lei Han, E-mail: zmyh@263.ne [Xi' an Power-Rail Micro Co., Ltd, Xi' an 710075 (China)

2009-02-15

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 mum CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 muA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm{sup 2}. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

International Nuclear Information System (INIS)

Zhu Zhangming; Liu Lianxi; Yang Yintang; Lei Han

2009-01-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm 2 . With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

Science.gov (United States)

Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

2009-02-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance

Directory of Open Access Journals (Sweden)

Wa Kong

2018-01-01

Full Text Available A symmetric Doherty power amplifier (DPA based on integrated enhancing reactance (IER was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

75 GHz InP DHBT power amplifier based on two-stacked transistors

DEFF Research Database (Denmark)

Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

2017-01-01

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

DEFF Research Database (Denmark)

Knott, Arnold; Petersen, Lars Press

2013-01-01

Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

Design of resonant converter based DC power supply for RF amplifier

International Nuclear Information System (INIS)

Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

2017-01-01

ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Simplified design of IC amplifiers

CERN Document Server

Lenk, John

1996-01-01

Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

International Nuclear Information System (INIS)

Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

1990-01-01

A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

An 8–18 GHz broadband high power amplifier

International Nuclear Information System (INIS)

Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

2011-01-01

An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

DEFF Research Database (Denmark)

Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari

2009-01-01

A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

CERN-group conceptual design of a fast neutron operated high power energy amplifier

International Nuclear Information System (INIS)

Rubbia, C.; Rubio, J.A.; Buono, S.

1997-01-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

CERN-group conceptual design of a fast neutron operated high power energy amplifier

Energy Technology Data Exchange (ETDEWEB)

Rubbia, C; Rubio, J A [European Organization for Nuclear Research, CERN, Geneva (Switzerland); Buono, S [Laboratoire du Cyclotron, Nice (France); and others

1997-11-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing. 84 refs, figs, tabs.

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

Energy Technology Data Exchange (ETDEWEB)

Gao Tongqiang [Department of Electronics, Tsinghua University, Beijing 100084 (China); Zhang Chun; Chi Baoyong; Wang Zhihua, E-mail: gtq03@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2009-06-01

To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-mum CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

International Nuclear Information System (INIS)

Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

2009-01-01

To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

A 500-600 MHz GaN power amplifier with RC-LC stability network

Science.gov (United States)

Ma, Xinyu; Duan, Baoxing; Yang, Yintang

2017-08-01

A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

International Nuclear Information System (INIS)

Kwiatkowski, S.; Enegren, T.; Poirier, R.L.

1988-06-01

The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

Analog circuit design designing high performance amplifiers

CERN Document Server

Feucht, Dennis

2010-01-01

The third volume Designing High Performance Amplifiers applies the concepts from the first two volumes. It is an advanced treatment of amplifier design/analysis emphasizing both wideband and precision amplification.

Design, development and characterization studies of a large aperture high power Nd : glass rod amplifier stage

International Nuclear Information System (INIS)

Gopi, N.; Bapna, R.C.; Murali, C.G.; Narayan, B.S.; Dhareshwar, L.J.

1992-01-01

Laser-plasma interaction studies and experiments related to laser driven shocks as well as laser induced inertially confined thermonuclear fusion have resulted in an ever increasing demand for high brightness lasers capable of producing nanosecond pulse with energy of hundreds of kilo joules. High power Nd-glass laser chains with a master oscillator followed by a number of amplifier stages made up of rods, disks, slabs etc. are in operation in many leading laboratories in the world. This report describes the design, development and characterisation studies of a large aperture Nd:glass laser amplifier which is to be incorporated on line with the existing 40 J, 5 ns high power laser chain built for laser-plasma interaction and laser driven shock wave studies in the Laser and Plasma Technology Division. The development work described in this report discusses the design based on optimum material selection, optimisation of various sub components, ease of maintenance and smooth operation. The necessary operational electronics has also been described. The characterization studies mainly include measurement of spatial gain uniformity, thermally induced depolarization effects, and thermal relaxation studies. (author). 37 refs., 14 figs., 5 tabs

Very fast, high peak-power, planar triode amplifiers for driving optical gates

International Nuclear Information System (INIS)

Howland, M.M.; Davis, S.J.; Gagnon, W.L.

1979-01-01

Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

Design of a high-gain laser diode-array pumped Nd:YAG Alternating Precessive Slab Amplifier (APS-Amplifier)

Science.gov (United States)

Coyle, D. Barry

1991-01-01

In the design of space qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

Design of a high-gain laser diode-array pumped Nd:YAG alternating precessive slab amplifier (APS amplifier)

Science.gov (United States)

Coyle, D. B.

1991-01-01

In the design of space-qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Science.gov (United States)

Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

2012-08-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Energy Technology Data Exchange (ETDEWEB)

Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2012-08-15

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

International Nuclear Information System (INIS)

Bai Xianchen; Yang Jianhua; Zhang Jiande

2012-01-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

DEFF Research Database (Denmark)

Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

2007-01-01

due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

The design of a 4’th order Bandpass Butterworth filter with one operational amplifier.

OpenAIRE

Gaunholt, Hans

2008-01-01

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, y...

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Zhao Lixin; Jin Zhi; Liu Xinyu, E-mail: zhaolixin@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

2009-12-15

In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

Small signal microwave amplifier design

CERN Document Server

Grosch, Theodore

2000-01-01

This book explains techniques and examples for designing stable amplifiers for high-frequency applications in which the signal is small and the amplifier circuit is linear. An in-depth discussion of linear network theory provides the foundation needed to develop actual designs. Examples throughout the book will show you how to apply the knowledge gained in each chapter leading to the complex design of low noise amplifiers. Many exercises at the end of each chapter will help students to practice their skills. The solutions to these design problems are available in an accompanying solutions book

Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications

International Nuclear Information System (INIS)

Zhang Meng; Li Zhiqun

2012-01-01

This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18 μm RF CMOS process. A two-stage cross-coupling cascaded common-gate (CG) topology has been designed as the amplifier. The first stage is a capacitive cross-coupling topology. It can reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology, used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA. A differential inductor has been designed as the load to achieve reasonable gain. This inductor has been simulated by the means of momentum electromagnetic simulation in ADS. A 'π' circuit model has been built as the inductor model by iteration in ADS. The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured. The LNA works well centered at 2.44 GHz. The measured gain S 21 is variable with high gain at 16.8 dB and low gain at 1 dB. The NF (noise figure) at high gain mode is 3.6 dB, the input referenced 1 dB compression point (IP1dB) is about −8 dBm and the IIP3 is 2 dBm at low gain mode. The LNA consumes about 1.2 mA current from 1.8 V power supply.

Conceptual design of an angular multiplexed 50 kJ KrF amplifier for ICF

International Nuclear Information System (INIS)

Lowenthal, D.D.; Ewing, J.J.; Center, R.E.; Mumola, P.; Olson, T.

1981-01-01

The results of a conceptual design for an angular multiplexed 50 kJ KrF amplifier for ICF are presented. Optical designs, amplifier scaling with a KrF kinetics code and limitations imposed by pulsed power technology are described

Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

Science.gov (United States)

Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

2017-05-01

In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

Spatial Power Combining Amplifier for Ground and Flight Applications

Science.gov (United States)

Velazco, J. E.; Taylor, M.

2016-11-01

Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

Operational amplifiers theory and design

CERN Document Server

Huijsing, Johan

2017-01-01

This proven textbook guides readers to a thorough understanding of the theory and design of operational amplifiers (OpAmps). The core of the book presents systematically the design of operational amplifiers, classifying them into a periodic system of nine main overall configurations, ranging from one gain stage up to four or more stages. This division enables circuit designers to recognize quickly, understand, and choose optimal configurations. Characterization of operational amplifiers is given by macro models and error matrices, together with measurement techniques for their parameters. Definitions are given for four types of operational amplifiers depending on the grounding of their input and output ports. Many famous designs are evaluated in depth, using a carefully structured approach enhanced by numerous figures. In order to reinforce the concepts introduced and facilitate self-evaluation of design skills, the author includes problems with detailed solutions, as well as simulation exercises. Provides te...

Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

CERN Document Server

Kerhervé, Eric

2015-01-01

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology

NARCIS (Netherlands)

Heijningen,M. van; Rodenburg, M.; Vliet, F.E. van; Massler, M.; Tessmann, A.; Brückner, F.; Müller, S.; Schwantuschke, D.; Quay; Narhi, T.

2012-01-01

The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10

A high-power two stage traveling-wave tube amplifier

International Nuclear Information System (INIS)

Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

1991-01-01

Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

OpenAIRE

Hassan Jassim Motlak

2015-01-01

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

A review on power reducing methods of neural recording amplifiers

Directory of Open Access Journals (Sweden)

samira mehdipour

2016-10-01

Full Text Available Implantable multi-channel neural recording Microsystems comprise a large number of neural amplifiers, that can affect the overall power consumption and chip area of the analog part of the system.power, noise, size and dc offset are the main challenge faced by designers. Ideally the output of the opamp should be at zero volts when the inputs are grounded.In reality the input terminals are at slightly different dc potentials.The input offset voltage is defined as the voltage that must be applied between the two input terminals of the opamp to obtain zero volts at the output. Amplifier must have capability to reject this dc offset. First method that uses a capacitor feedback network with ac coupling of input devices to reject the offset is very popular in designs.very small low-cutoff frequency.The second method employs a closed-loop resistive feedback and electrode capacitance to form a highpass filter.Moreover,The third method adopts the symmetric floating resistor the feedback path of low noise amplifier to achieve low-frequency cutoff and rejects DC offset voltage. .In some application we can use folded cascade topology.The telescopic topology is a good candidate in terms of providing large gain and phase margin while dissipating small power. the cortical VLSI neuron model reducing power consumption of circuits.Power distribution is the best way to reduce power, noise and silicon area. The total power consumption of the amplifier array is reduced by applying the partial OTA sharing technique. The silicon area is reduced as a benefit of sharing the bulky capacitor.

Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

NARCIS (Netherlands)

Vathulay, V.; Sowlati, T.; Leenaerts, D.M.W.

2001-01-01

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit,

Design of a Front– End Amplifier for the Maximum Power Delivery and Required Noise by HBMO with Support Vector Microstrip Model

Directory of Open Access Journals (Sweden)

F. Guneş

2014-04-01

Full Text Available Honey Bee Mating Optimization (HBMO is a recent swarm-based optimization algorithm to solve highly nonlinear problems, whose based approach combines the powers of simulated annealing, genetic algorithms, and an effective local search heuristic to search for the best possible solution to the problem under investigation within a reasonable computing time. In this work, the HBMO- based design is carried out for a front-end amplifier subject to be a subunit of a radar system in conjunction with a cost effective 3-D SONNET-based Support Vector Regression Machine (SVRM microstrip model. All the matching microstrip widths, lengths are obtained on a chosen substrate to satisfy the maximum power delivery and the required noise over the required bandwidth of a selected transistor. The proposed HBMO- based design is applied to the design of a typical ultra-wide-band low noise amplifier with NE3512S02 on a substrate of Rogers 4350 for the maximum output power and the noise figure F(f=1dB within the 5-12 GHz using the T- type of microstrip matching circuits. Furthermore, the effectiveness and efficiency of the proposed HBMO based design are manifested by comparing it with the Genetic Algorithm (GA, Particle Swarm Optimization (PSO and the simple HBMO based designs.

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

NARCIS (Netherlands)

Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

2005-01-01

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications.

Science.gov (United States)

Yousefinezhad, Sajad; Kermani, Saeed; Hosseinnia, Saeed

2018-01-01

The operational transconductance amplifier-capacitor (OTA-C) filter is one of the best structures for implementing continuous-time filters. It is particularly important to design a universal OTA-C filter capable of generating the desired filter response via a single structure, thus reducing the filter circuit power consumption as well as noise and the occupied space on the electronic chip. In this study, an inverter-based universal OTA-C filter with very low power consumption and acceptable noise was designed with applications in bioelectric and biomedical equipment for recording biomedical signals. The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. The performance of the proposed filter was simulated and analyzed via HSPICE software (level 49) and 180 nm complementary metal-oxide-semiconductor technology. The rate of power consumption and noise obtained from simulations are 7.1 nW and 10.18 nA, respectively, so this filter has reduced noise as well as power consumption. The proposed universal OTA-C filter was designed based on the minimum number of transconductance blocks and an inverter circuit by three transconductance blocks (OTA).

Self-oscillating modulators for direct energy conversion audio power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and simulated waveforms of a prototype amplifier are presented. (au)

Design and Fabrication of a 1 THz Backward Wave Amplifier

DEFF Research Database (Denmark)

Paoloni, Claudio; Di Carlo, Aldo; Brunetti, Francesca

2011-01-01

, to get a level of output power to enable applications at these frequencies. The OPTHER (Optically driven THz amplifier) project, funded by the European Community, is on the road to realize the first 1 THz vacuum tube amplifier. Technology at the state of the art has been used for the realization...... of the parts with dimensions supporting THz frequencies. A backward wave amplifier configuration is chosen to make the parts realizable. A carbon nanotube cold cathode has been considered for electron generation. A thermionic micro electron gun is designed to test the tube. A novel slow-wave structure (SWS...

An integrated continuous class-F-1 mode power amplifier design approach for microwave enhanced portable diagnostic applications

OpenAIRE

Imtiaz, Azeem; Lees, Jonathan; Choi, Heungjae; Joshi, Lovleen Tina

2015-01-01

© 2015 IEEE. This paper presents a novel technique for designing a microwave power delivery system targeted at compact and portable microwave-assisted diagnostic healthcare applications to help tackle the growing problem of anti-microbial resistance. The arrangement comprises a purpose-built cylindrical cavity resonator within which, the bacterial samples are exposed, driven by a high-efficiency 10-W GaN amplifier, critically coupled via a simple, adjustable internal loop antenna. The experim...

An RF Power Amplifier in a Digital CMOS Process

DEFF Research Database (Denmark)

Nielsen, Per Asbeck; Fallesen, Carsten

2002-01-01

A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

47 CFR 2.815 - External radio frequency power amplifiers.

Science.gov (United States)

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2... AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815 External radio frequency power amplifiers. (a) As used in this part, an external radio frequency power...

Extended Cann Model for Behavioral Modeling of Envelope Tracking Power Amplifiers

DEFF Research Database (Denmark)

Tafuri, Felice Francesco; Larsen, Torben

2013-01-01

This paper deals with behavioral modeling of power amplifiers (PAs) for envelope tracking (ET) applications. In such a scenario, the power supply modulation brings in several additional challenges for the system design and, similarly, it becomes more difficult to obtain an accurate and general PA...... by the ET operation. The model performance is tested modeling data-sets acquired from an ET test bench including a commercial RFMD PA and an envelope modulator designed using a commercial IC from TI....

Analysis and evaluation of the power amplifier device

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

2011-11-15

We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

Development of 350 MHz/1000 Watt intermediate power amplifier for 400 keV RFQ accelerator

International Nuclear Information System (INIS)

Pande, M.M.; Patel, N.R.; Shinde, K.R.; Rao, M.K.V.; Handu, V.K.

2005-01-01

Two numbers of high power RF systems, each delivering around 35 to 40 kW of power at 350 MHz are being developed in BARC. These High Power Amplifiers (HPA) cater to the total need of 70 kW of RF power required by the 400 keV (Deuterium) RFQ accelerator. This RFQ will replace the existing 400 keV DC accelerator of 14 MeV Neutron Generator. The RFQ will accelerate a deuterium beam from 50 keV to 400 keV to impinge upon a tritium target inside a sub critical assembly. Each of these 35 / 40 KW HPA requires a drive power of around 1000 / 1500 Watt respectively. Hence a intermediate power amplifier (IPA) bas been designed to deliver the power of 1000 Watt at the rate of 350 MHz. The paper describes the development of this amplifier

Design and Research of Piezoelectric Ceramics Drive Power

Directory of Open Access Journals (Sweden)

Guang Ya LIU

2014-01-01

Full Text Available Piezoelectric amplifier is a very important part of the piezoelectric actuator. It does not only require high positioning accuracy, but also high frequency response. This paper designs the error amplifier drive power consisting of high-voltage op amp and discrete components, consisting of an error-amplified circuit, a power amplifier circuit, a feedback network and a discharge circuit. A compensation technique based on feedback zero compensation is proposed and it increases the frequency bandwidth and dynamic characteristics of the PZT power effectively. Through the power of the theoretical analysis and Multisim software simulation, the power supply has a good drive capability.

A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

Energy Technology Data Exchange (ETDEWEB)

Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao, E-mail: tanxi@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2010-12-15

A two-stage differential linear power amplifier (PA) fabricated by 0.18 {mu}m CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm{sup 2}. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

International Nuclear Information System (INIS)

Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao

2010-01-01

A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm 2 . System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

Science.gov (United States)

Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

2014-01-01

This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

International Nuclear Information System (INIS)

Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

2013-01-01

Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

Science.gov (United States)

Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

2013-06-01

Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

Novel Approach to Design Ultra Wideband Microwave Amplifiers: Normalized Gain Function Method

Directory of Open Access Journals (Sweden)

R. Kopru

2013-09-01

Full Text Available In this work, we propose a novel approach called as “Normalized Gain Function (NGF method” to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device. Normalized Gain Function TNGF is defined as the ratio of T and |S21|^2, desired shape or frequency response of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN of the amplifier requires mathematically generated target gain functions to be tracked in two different nonlinear optimization processes. In this manner, NGF not only facilitates a mathematical base to share the amplifier gain function into such two distinct target gain functions, but also allows their precise computation in terms of TNGF=T/|S21|^2 at the very beginning of the design. The particular amplifier presented as the design example operates over 800-5200 MHz to target GSM, UMTS, Wi-Fi and WiMAX applications. An SRFT (Simplified Real Frequency Technique based design example supported by simulations in MWO (MicroWave Office from AWR Corporation is given using a 1400mW pHEMT transistor, TGF2021-01 from TriQuint Semiconductor.

Current-Driven Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

2012-01-01

The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

Self-oscillating modulators for direct energy conversion audio power amplifiers

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating...

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

Science.gov (United States)

2017-03-01

QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Science.gov (United States)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

High peak power picosecond hybrid fiber and solid-state amplifier system

International Nuclear Information System (INIS)

Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

2010-01-01

We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

OpenAIRE

Kühn, J.

2011-01-01

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Design and analysis of optically pumped submillimeter waveguide maser amplifiers and oscillators

Science.gov (United States)

Galantowicz, T. A.

1975-01-01

The design and experimental measurements are described of an optically pumped far-infrared (FIR) waveguide maser; preliminary measurements on a FIR waveguide amplifier are presented. The FIR maser was found to operate satisfactorily in a chopped CW mode using either methanol (CH3OH) or acetonitrile (CH3CN) as the active molecule. Two other gases, difluoroethane and difluoroethylene, produced an unstable output with high threshold and low output power when operated in the chopped CW mode. Experimental measurements include FIR output versus cavity length, output beam pattern, output power versus pressure, and input power. The FIR output was the input to an amplifier which was constructed similar to the oscillator. An increase of 10% in output power was noted on the 118.8 microns line of methanol.

2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

Directory of Open Access Journals (Sweden)

M. Dirix

2009-01-01

Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

A Low-Power CMOS Trans-Impedance Amplifier for 2.5 Gb/S Optical Communication Systems

Directory of Open Access Journals (Sweden)

Mojgan Mohseni

2013-01-01

Full Text Available This Paper presents a new Trans-impedance amplifier for optical receiver circuits. The amplifier is based on parallel (R-C feedback topology which is optimized for power consumption and uses shunt-peaking technique to enhance the frequency bandwidth of the amplifier. However, the circuit is designed and simulated using 0.18µm CMOS technology parameters. As simulation results show, the amplifier has a gain of 67.5dBΩ, bandwidth of 3GHz while consumes only 12.16 mW power which shows a very good performance for using in a 2.5Gb/S (SONET OC-48 optical communication system. Finally, as the simulated Eye-Diagram shows, the circuit has a very good performance for a 2.5Gb/S system for a 10µA input current.

Power amplifier circuits for functional electrical stimulation systems

Directory of Open Access Journals (Sweden)

Delmar Carvalho de Souza

Full Text Available Abstract Introduction: Functional electrical stimulation (FES is a technique that has been successfully employed in rehabilitation treatment to mitigate problems after spinal cord injury (SCI. One of the most relevant modules in a typical FES system is the power or output amplifier stage, which is responsible for the application of voltage or current pulses of proper intensity to the biological tissue, applied noninvasively via electrodes, placed on the skin surface or inside the muscular tissue, closer to the nervous fibers. The goals of this paper are to describe and discuss about the main power output designs usually employed in transcutaneous functional electrical stimulators as well as safety precautions taken to protect patients. Methods A systematic review investigated the circuits of papers published in IEEE Xplore and ScienceDirect databases from 2000 to 2016. The query terms were “((FES or Functional electric stimulator and (circuit or design” with 274 papers retrieved from IEEE Xplore and 29 from ScienceDirect. After the application of exclusion criteria the amount of papers decreased to 9 and 2 from IEEE Xplore and ScienceDirect, respectively. One paper was inserted in the results as a technological contribution to the field. Therefore, 12 papers presented power stage circuits suitable to stimulate great muscles. Discussion The retrieved results presented relevant circuits with different electronic strategies and circuit components. Some of them considered patient safety strategies or aimed to preserve muscle homeostasis such as biphasic current application, which prevents charge accumulation in stimulated tissues as well as circuits that dealt with electrical impedance variation to keep the electrode-tissue interface within an electrochemical safe regime. The investigation revealed a predominance of design strategies using operational amplifiers in power circuits, current outputs, and safety methods to reduce risks of electrical

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

Science.gov (United States)

Sullivan, Gerry

2001-01-01

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

A high power cross-field amplifier at X-Band

International Nuclear Information System (INIS)

Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

1991-05-01

A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs

PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

DEFF Research Database (Denmark)

Narendra, K.; Limiti, E.; Paoloni, C.

2013-01-01

A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...

Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

DEFF Research Database (Denmark)

Moradi, Farshad

A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

A real-time control system architecture for industrial power amplifiers

NARCIS (Netherlands)

Qureshi, F.; Spinu, V.; Wijnands, C.G.E.; Lazar, M.

2013-01-01

Power amplifiers are a highly important component in a range of industrial applications, such as, servo-drives, magnetic resonance imaging, energy systems, and audio. The control system for power amplifiers should satisfy a range of requirements, e.g., offset free tracking, stability margins, and

Comparison of Preamplifiers for Low-power Consumption Design

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung Hyun; Kim, Han Soo; Lee, Kyu Hong; Choi, Hyo Jeong; Na, Teresa W.; Ha, Jang Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Chai, Jong Seo [Sungkyunkwan University, Suwon (Korea, Republic of)

2011-10-15

The commonly used electronic devices in radiation detector system are the preamplifier, the amplifier, ADC, and etc. to extract the signal from the detector and to process the signal. These components are composed of semiconductor devices like BJT, MOSFET, OPAMP, and etc. Performance and power consumption of these components are various according to the composition of semiconductor devices. In this study, preamplifiers, which are composed of high efficiency semiconductor devices, are compared to design low-power consumption and high performance preamplifier. To confirm the purpose, preamplifiers are designed for low-power consumption and high gain by some OPAMP (Operational Amplifier). The comparison was performed by experimental result and design simulation

Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

Science.gov (United States)

Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

2016-04-25

Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. Copyright © 2016 Elsevier Ltd. All rights reserved.

Maximizing power output from continuous-wave single-frequency fiber amplifiers.

Science.gov (United States)

Ward, Benjamin G

2015-02-15

This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2005-01-01

This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

Science.gov (United States)

Seneviratne, Sashieka

With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

An implantable integrated low-power amplifier-microelectrode array for Brain-Machine Interfaces.

Science.gov (United States)

Patrick, Erin; Sankar, Viswanath; Rowe, William; Sanchez, Justin C; Nishida, Toshikazu

2010-01-01

One of the important challenges in designing Brain-Machine Interfaces (BMI) is to build implantable systems that have the ability to reliably process the activity of large ensembles of cortical neurons. In this paper, we report the design, fabrication, and testing of a polyimide-based microelectrode array integrated with a low-power amplifier as part of the Florida Wireless Integrated Recording Electrode (FWIRE) project at the University of Florida developing a fully implantable neural recording system for BMI applications. The electrode array was fabricated using planar micromachining MEMS processes and hybrid packaged with the amplifier die using a flip-chip bonding technique. The system was tested both on bench and in-vivo. Acute and chronic neural recordings were obtained from a rodent for a period of 42 days. The electrode-amplifier performance was analyzed over the chronic recording period with the observation of a noise floor of 4.5 microVrms, and an average signal-to-noise ratio of 3.8.

A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

International Nuclear Information System (INIS)

Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

1990-01-01

A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λ ω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

High efficiency class-I audio power amplifier using a single adaptive supply

International Nuclear Information System (INIS)

Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

2012-01-01

A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

Energy Technology Data Exchange (ETDEWEB)

J.G. Kulpin, K.J. Kleman, R.A. Legg

2012-07-01

A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

Energy Technology Data Exchange (ETDEWEB)

Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

1993-05-01

A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

Gyrocon: a deflection-modulated, high-power microwave amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1977-10-01

A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

Science.gov (United States)

Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

2009-01-01

In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

High power pulsed sources based on fiber amplifiers

Science.gov (United States)

Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

2017-11-01

Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

Preliminary design of experiment high power density laser beam interaction with plasmas and development of a cold cathode electron beam laser amplifier

International Nuclear Information System (INIS)

Mosavi, R.K.; Kohanzadeh, Y.; Taherzadeh, M.; Vaziri, A.

1976-01-01

This experiment is designed to produce plasma by carbon dioxide pulsed laser, to measure plasma parameters and to study the interaction of the produced plasma with intense laser beams. The objectives of this experiment are the following: 1. To set up a TEA CO 2 laser oscillator and a cold cathode electron beam laser amplifier together as a system, to produce high energy optical pulses of short duration. 2. To achieve laser intensities of 10 11 watt/cm 2 or more at solid targets of polyethylene (C 2 H 4 )n, lithium hydride (LiH), and lithium deuteride in order to produce high temperature plasmas. 3. To design and develop diagnostic methods for studies of laser-induced plasmas. 4. To develop a high power CO 2 laser amplifier for the purpose of upgrading the optical energy delivered to the targets

Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

Science.gov (United States)

Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

2014-03-15

Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

Efficiency Optimization in Class-D Audio Amplifiers

DEFF Research Database (Denmark)

Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

2015-01-01

This paper presents a new power efficiency optimization routine for designing Class-D audio amplifiers. The proposed optimization procedure finds design parameters for the power stage and the output filter, and the optimum switching frequency such that the weighted power losses are minimized under...... the given constraints. The optimization routine is applied to minimize the power losses in a 130 W class-D audio amplifier based on consumer behavior investigations, where the amplifier operates at idle and low power levels most of the time. Experimental results demonstrate that the optimization method can...... lead to around 30 % of efficiency improvement at 1.3 W output power without significant effects on both audio performance and the efficiency at high power levels....

Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

Directory of Open Access Journals (Sweden)

Abdulkareem Mokif Obais

2017-05-01

Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

Designs of two and three cavity gyroklystron amplifiers operating at fundamental, second, and fourth harmonics

International Nuclear Information System (INIS)

Saraph, G.P.; Lawson, W.; Latham, P.E.; Cheng, J.; Castle, M.

1995-01-01

Two and three cavity, co-axial, relativistic gyroklystron amplifiers are investigated for driving future linear colliders. Detailed designs of gyroklystrons operating at fundamental (8.568 GHz), second (17.136 GHz), and fourth harmonic (34.272 GHz) frequencies are presented. Numerical simulations predict over 40% efficiency, 45-50 dB gain, and 100-160 MW power level for the fundamental and second harmonic designs. It is shown that introducing a penultimate (buncher) cavity significantly improves efficiency and gain of the second harmonic amplifier. The fourth harmonic design has a modest efficiency of 10-15%

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

Switching-mode Audio Power Amplifiers with Direct Energy Conversion

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

has been replaced with a high frequency AC link. When compared to the conventional Class D amplifiers with a separate DC power supply, the proposed single conversion stage amplifier provides simple and compact solution with better efficiency and higher level of integration, leading to reduced...

5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

Energy Technology Data Exchange (ETDEWEB)

Zhang Xuelian; Yan Jun; Shi Yin [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Foster, Dai Fa, E-mail: xlzhang@semi.ac.c [Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849-5201 (United States)

2009-01-15

A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 mum SiGe BiCMOS technology and occupy 1.12 x 1.25 mm{sup 2} die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85 deg. C converges within +-3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

Wideband amplifier design

CERN Document Server

Hollister, Allen L

2007-01-01

In this book, the theory needed to understand wideband amplifier design using the simplest models possible will be developed. This theory will be used to develop algebraic equations that describe particular circuits used in high frequency design so that the reader develops a ""gut level"" understanding of the process and circuit. SPICE and Genesys simulations will be performed to show the accuracy of the algebraic models. By looking at differences between the algebraic equations and the simulations, new algebraic models will be developed that include parameters originally left out of the model

ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

International Nuclear Information System (INIS)

Nelson, Brian A.

2006-01-01

Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

Science.gov (United States)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

Design considerations of a MW-scale, high-efficiency, industrial-use, ultraviolet FEL amplifier

International Nuclear Information System (INIS)

Pagani, C.; Saldin, E.L.; Schneidmiller, E.A.; Yurkov, M.V.

2000-01-01

Theoretical and experimental work in free electron laser (FEL) physics, and the physics of particle accelerators over the last 10 years has pointed to the possibility of the generation of MW-level optical beams with laser-like characteristics in the ultraviolet (UV) spectral range. The concept is based on generation of the radiation in the master oscillator-power FEL amplifier (MOPA) configuration. The FEL amplifier concept eliminates the need for an optical cavity. As a result, there are no thermal loading limitations to increase the average output power of this device up to the MW-level. The problem of a tunable master oscillator can be solved with available conventional quantum lasers. The use of a superconducting energy-recovery linac could produce a major, cost-effective facility with wall plug power to output optical power efficiency of about 20% that spans wavelengths from the visible to the deep ultraviolet regime. The stringent electron beam qualities required for UV FEL amplifier operation can be met with a conservative injector design (using a conventional thermionic gun and subharmonic bunchers) and the beam compression and linear acceleration technology, recently developed in connection with high-energy linear collider and X-ray FEL programs

S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

International Nuclear Information System (INIS)

Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

2005-01-01

S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

Science.gov (United States)

Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

2018-02-01

Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

A novel power amplifier structure for RFID tag applications

International Nuclear Information System (INIS)

Deng Jianbao; Zhang Shilin; Li De; Zhang Yanzheng; Mao Luhong; Xie Sheng

2011-01-01

A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm 2 in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. (semiconductor integrated circuits)

Low-Power Amplifier-Discriminators for High Time Resolution Detection

CERN Document Server

Despeisse, M; Anghinolfi, F; Tiuraniemi, S; Osmic, F; Riedler, P; Kluge, A; Ceccucci, A

2009-01-01

Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 mu W per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in h...

Stability investigation for InP DHBT mm‐wave power amplifier

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

2013-01-01

microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

Multi Carrier Modulation Audio Power Amplifier with Programmable Logic

DEFF Research Database (Denmark)

Christiansen, Theis; Andersen, Toke Meyer; Knott, Arnold

2009-01-01

While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment. To lower the EMI of switch-mode (class D) audio power a...

Development of High Power Amplifiers for Space and Ground-based Applications

DEFF Research Database (Denmark)

Hernández, Carlos Cilla

The power amplifier used in the transmitter of a microwave system is a key issue, and it derermines the system performance, cost, power consumption and reliability to a considerable extent. Traditionally, most of high power amplifiers used in military and commercial applications were tube......, the device was delivering power levels larger than 75 W, PAE >35% and gain oscillating between 7.5 +/- 0.5 dB. Measurements were shifted down in frequency 1 GHz, but simulations predicted maximum power levels similar to the ones measured....

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

Energy Technology Data Exchange (ETDEWEB)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

2009-06-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

International Nuclear Information System (INIS)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

2009-01-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

Development of 650 MHz solid state RF amplifier for proton accelerator

International Nuclear Information System (INIS)

Jain, Akhilesh; Sharma, Deepak; Gupta, Alok; Tiwari, Ashish; Rao, Nageswar; Sekar, Vasanthi; Lad, M.; Hannurkar, P.R.; Gupta, P.D.

2011-01-01

Design and development of 30 kW high powers RF source at 650 MHz, using solid RF state technology, has been initiated at RRCAT. The indigenous technology development efforts will be useful for the proposed high power proton accelerators for SNS/ADS applications. In this 650 MHz amplifier scheme, 30 kW CW RF power will be generated using modular combination of 8 kW amplifier units. Necessary studies were carried out for device selection, choice of amplifier architecture and design of high power combiners and dividers. Presently RF amplifier delivering 250 W at 650 MHz has been fabricated and tested. Towards development of high power RF components, design and engineering prototyping of 16-port power combiner, directional coupler and RF dummy loads has been completed. The basic 8 kW amplifier unit is designed to provide power gain of 50 dB, bandwidth of 20 MHz and spurious response below 30 dB from fundamental signal. Based on the results of circuit simulation studies and engineering prototyping of amplifier module, two RF transistor viz. MRF3450 and MRF 61K were selected as solid state active devices. Impedance matching network in amplifier module is designed using balanced push pull configuration with transmission line BALUN. Due to high circulating current near drain side, metal clad RF capacitors were selected which helps in avoiding hot spot from output transmission path, ensuring continuous operation at rated RF power without damage to RF board. 350 W circulator is used to protect the RF devices from reflected power. Based on the prototype design and measured performance, one of these RF transistors will be selected to be used as workhorse for all amplifier modules. Two amplifier modules are mounted on water cooled copper heat-sink ensuring proper operating temperature for reliable and safe operation of amplifier. Also real time control system and data logger has been developed to provide DAQ and controls in each rack. For power combining and power measurement

High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

Science.gov (United States)

Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

2018-03-01

A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

OpenAIRE

Mitrevski, Dragan

2011-01-01

In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

2008-01-01

While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

PULSE MODULATION POWER AMPLIFIER WITH ENHANCED CASCADE CONTROL METHOD

DEFF Research Database (Denmark)

1998-01-01

a single local feedback path A (7) with a lowpass characteristic and local forward blocks B¿1? or B (3, 4). The leads to a much improved system with a very low sensitivity to errors in the switching power stage. In the second preferred embodiment of the invention the control structure is extended...... and feedback path A to determine stable self-oscillating conditions. An implemented 250W example MECC digital power amplifier has proven superior performance in terms of audio performance (0.005 % distortion, 115 dB dynamic range) and efficiency (92 %).......A digital switching power amplifier with Multivariable Enhanced Cascade Controlled (MECC) includes a modulator, a switching power stage and a low pass filter. In the first preferred embodiment an enhanced cascade control structure local to the switching power stage is added, characterised by having...

High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

International Nuclear Information System (INIS)

Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

1991-01-01

Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

High power 352 MHz solid state amplifiers developed at the Synchrotron SOLEIL

Directory of Open Access Journals (Sweden)

P. Marchand

2007-11-01

Full Text Available In SOLEIL, 5 solid state amplifiers provide the required rf power at 352  MHz: 1×35  kW in the booster and 4×190  kW in the storage ring. They consist in a combination of a large number of 330 W elementary modules (1×147 in the booster and 4×724 in the storage ring, based on a design developed in-house, with MOSFETs (metal-oxide-semiconductor field-effect transistors, integrated circulators, and individual power supplies. Although quite innovative and challenging for the required power range, this technology is very attractive and presents significant advantages as compared to the more conventional vacuum tubes, klystrons, or inductive output tubes (IOTs. The booster and two of the storage ring power plants have been successfully commissioned and the first operational experience is quite satisfactory. The amplifiers proved to be very reliable as well as easy and flexible in operation; they have not been responsible for any beam time loss.

A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

International Nuclear Information System (INIS)

Cui Jie; Chen Lei; Kang Chunlei; Shi Jia; Zhang Xuguang; Ai Baoli; Liu Yi

2013-01-01

A three-stage 4.8–6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a ∼31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal. (semiconductor integrated circuits)

Design of an integrated analog controller for a Class-D Audio Amplifier

OpenAIRE

Verbrugghe, Jochen; De Bock, Maarten; Rombouts, Pieter

2009-01-01

An integrated analog controller for a self-oscillating class-D audio power amplifier is designed in a 0.35 μm CMOS technology for a 3.3 Volt power supply. It is intended to be used with an external output stage and passive filter, for medium power applications of upto a few 100 Watts. The controller was optimized with regard to its loop gain to suppress the distortion of the output stage. In typical commercially available output stages, the distortion is dominated by dead time effects and th...

Characterization of transimpedance amplifier as optical to electrical converter on designing optical instrumentation

International Nuclear Information System (INIS)

Hanto, D; Ula, R K

2017-01-01

Optical to electrical converter is the main components for designing of the optical instrumentations. In addition, this component is also used as signal conditioning. This component usually consists of a photo detector and amplifier. In this paper, characteristics of commercial amplifiers from Thorlabs PDA50B-EC has been observed. The experiment was conducted by diode laser with power of -5 dBm and wavelength 1310 nm; the optical attenuator to vary optical power from 0 to 60 dB, optical to electrical converter from Thorlabs Amplifier PDA50B-EC; multimode optical fiber to guide the laser; and digital voltmeter to measure the output of converter. The results of the characterization indicate that each channel amplification has a non-linear correlation between optical and electrical parameter; optical conversion measurement range of 20-23 dB to full scale; and different measurement coverage area. If this converter will be used as a part component of optical instrumentation so it should be adjusted suitably with the optical power source. Then, because of the correlation equation is not linear so calculation to determine the interpretation also should be considered in addition to the transfer function of the optical sensor. (paper)

Characterization of transimpedance amplifier as optical to electrical converter on designing optical instrumentation

Science.gov (United States)

Hanto, D.; Ula, R. K.

2017-05-01

Optical to electrical converter is the main components for designing of the optical instrumentations. In addition, this component is also used as signal conditioning. This component usually consists of a photo detector and amplifier. In this paper, characteristics of commercial amplifiers from Thorlabs PDA50B-EC has been observed. The experiment was conducted by diode laser with power of -5 dBm and wavelength 1310 nm; the optical attenuator to vary optical power from 0 to 60 dB, optical to electrical converter from Thorlabs Amplifier PDA50B-EC; multimode optical fiber to guide the laser; and digital voltmeter to measure the output of converter. The results of the characterization indicate that each channel amplification has a non-linear correlation between optical and electrical parameter; optical conversion measurement range of 20-23 dB to full scale; and different measurement coverage area. If this converter will be used as a part component of optical instrumentation so it should be adjusted suitably with the optical power source. Then, because of the correlation equation is not linear so calculation to determine the interpretation also should be considered in addition to the transfer function of the optical sensor.

1-MHz high power femtosecond Yb-doped fiber chirped-pulse amplifier

Science.gov (United States)

Hu, Zhong-Qi; Yang, Pei-Long; Teng, Hao; Zhu, Jiang-Feng; Wei, Zhi-Yi

2018-01-01

A practical femtosecond polarization-maintaining Yb-doped fiber amplifier enabling 153 fs transform-limited pulse duration with 32 μJ pulse energy at 1 MHz repetition rate corresponding to a peak power of 0.21 GW is demonstrated. The laser system based on chirped-pulse amplification (CPA) technique is seeded by a dispersion managed, nonlinear polarization evolution (NPE) mode-locked oscillator with spectrum bandwidth of 31 nm at 1040 nm and amplified by three fiber pre-amplifying stages and a rod type fiber main amplifying stage. The laser works with beam quality of M2 of 1.3 and power stability of 0.63% (root mean square, RMS) over 24 hours will be stable sources for industrial micromachining, medical therapy and scientific research.

A Power Efficient Audio Amplifier Combining Switching and Linear Techniques

NARCIS (Netherlands)

van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

1998-01-01

Integrated Class D audio amplifiers are very power efficient, but require an external filter which prevents further integration. Also due to this filter, large feedback factors are hard to realise, so that the load influences the distortion- and transfer characteristics. The amplifier presented in

The design of high performance weak current integrated amplifier

International Nuclear Information System (INIS)

Chen Guojie; Cao Hui

2005-01-01

A design method of high performance weak current integrated amplifier using ICL7650 operational amplifier is introduced. The operating principle of circuits and the step of improving amplifier's performance are illustrated. Finally, the experimental results are given. The amplifier has programmable measurement range of 10 -9 -10 -12 A, automatic zero-correction, accurate measurement, and good stability. (authors)

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK

Directory of Open Access Journals (Sweden)

Jorge Moreno Rubio

2015-01-01

Full Text Available This paper shows the design and simulation results of a hybrid Doherty power amplifier. The amplifier has been designed at 2,4 GHz, obtaining power-added efficiency above 70 % for 6 dB output power back-off, together with a small signal gain of 17 dB. Design and analysis equations are presented considering class AB bias conditions for the main amplifier and class C for the peak one in back-off larger than 6 dB, and FET device assumption. An additional control on the bias point of the peak device has been carried out, in order to increase the gain on the Doherty region and ease the design of the peak branch. A Cree’s GaN-HEMT CGH40010F device has been used with a nonlinear model guarantied up to 6 GHz and with an expected output power of 10 W. The obtained output power is higher than 25-W. The simulation has been carried out using Agilent ADS CAD tools. The present design could present the state of the art in terms of continuous-wave (CW characterization

Microwave amplifier and active circuit design using the real frequency technique

CERN Document Server

Jarry, Pierre

2016-01-01

This book focuses on the authors' Real Frequency Technique (RFT) and its application to a wide variety of multi-stage microwave amplifiers and active filters, and passive equalizers for radar pulse shaping and antenna return loss applications. The first two chapters review the fundamentals of microwave amplifier design and provide a description of the RFT. Each subsequent chapter introduces a new type of amplifier or circuit design, reviews its design problems, and explains how the RFT can be adapted to solve these problems. The authors take a practical approach by summarizing the design steps and giving numerous examples of amplifier realizations and measured responses. Provides a complete description of the RFT as it is first used to design multistage lumped amplifiers using a progressive optimization of the equalizers, leading to a small umber of parameters to optimize simultaneously Presents modifications to the RFT to design trans-impedance microwave amplifiers that are used for photodiodes acti...

A high performance electrometer amplifier of hybrid design

International Nuclear Information System (INIS)

Rao, N.V.; Nazare, C.K.

1979-01-01

A high performance, reliable, electrometer amplifier of hybrid design for low current measurements in mass spectrometers has been developed. The short term instability with a 5 x 10 11 ohms input resistor is less than 1 x 10sup(-15) Amp. The drift is better than 1 mV/hour. The design steps are illustrated with a typical amplifier performance details. (auth.)

An audio FIR-DAC in a BCD process for high power Class-D amplifiers

NARCIS (Netherlands)

Doorn, T.S.; van Tuijl, Adrianus Johannes Maria; Schinkel, Daniel; Annema, Anne J.; Berkhout, M.; Berkhout, M.; Nauta, Bram

A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant

Accurate expressions for the power efficiency of a class-D power amplifier in a limit-cycle transmitter configuration

NARCIS (Netherlands)

Sarkeshi, M.; Mahmoudi, R.; Roermund, van A.H.M.

2009-01-01

Limit-cycle based, self-oscillating amplifiers are promising candidates for linear amplification of complex signals with high peak-to-average ratio, while maintaining high power efficiency. Limit-cycle transmitters employ switch class-D power amplifiers in order to achieve high Efficiency. In this

Optimum design of a multi-stage dye-laser amplifier pumped with Cu-vapor lasers

International Nuclear Information System (INIS)

Maeda, Mitsuo; Uchiumi, Michihiro

1990-01-01

A numerical simulation code, based on the one-dimensional photon transport equation, was developed and analyzed to evaluate the performances of Rhodamine 6G dye laser amplifiers pumped with Cu-vapor lasers. The upper singlet-state absorption played an important role to determine the efficiency. The simulation code was applied to optimize a multi-stage amplifier system with a pulsed or a CW dye-laser oscillator. The analytical results gave a useful guideline to design a high-power pulsed dye-laser system for atomic uranium enrichment. (author)

Compact solid state radio frequency amplifiers in kW regime for ...

Indian Academy of Sciences (India)

RF amplifier; solid state amplifier; power combiner and divider; .... was designed using planar and coaxial transmission line baluns with minimum lumped variable ..... Cripps S C 1999 RF power amplifiers for wireless communication. Norwood: ...

Solid state high power amplifier for driving the SLC injector klystron

International Nuclear Information System (INIS)

Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

1985-03-01

The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

A high-power millimeter-wave sheet beam free-electron laser amplifier

International Nuclear Information System (INIS)

Cheng, S.; Destler, W.W.; Granatstein, V.L.; Antonsen, T.M.; Levush, B.; Rodgers, J.; Zhang, Z.X.

1996-01-01

The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher injection power level indicates that the device has approached saturation. The device was studied over a broad range of experimental parameters. The experimental results have a good agreement with expectations from a one-dimensional simulation code. The successful operation of this device has proven the feasibility of the original concept and demonstrated the advantages of the sheet beam FEL amplifier. The results of the studies will provide guidelines for the future development of sheet beam FEL's and/or other kinds of sheet beam devices. These devices have fusion application

Modeling and Optimization of Class-E Amplifier at Subnominal Condition in a Wireless Power Transfer System for Biomedical Implants.

Science.gov (United States)

Liu, Hao; Shao, Qi; Fang, Xuelin

2017-02-01

For the class-E amplifier in a wireless power transfer (WPT) system, the design parameters are always determined by the nominal model. However, this model neglects the conduction loss and voltage stress of MOSFET and cannot guarantee the highest efficiency in the WPT system for biomedical implants. To solve this problem, this paper proposes a novel circuit model of the subnominal class-E amplifier. On a WPT platform for capsule endoscope, the proposed model was validated to be effective and the relationship between the amplifier's design parameters and its characteristics was analyzed. At a given duty ratio, the design parameters with the highest efficiency and safe voltage stress are derived and the condition is called 'optimal subnominal condition.' The amplifier's efficiency can reach the highest of 99.3% at the 0.097 duty ratio. Furthermore, at the 0.5 duty ratio, the measured efficiency of the optimal subnominal condition can reach 90.8%, which is 15.2% higher than that of the nominal condition. Then, a WPT experiment with a receiving unit was carried out to validate the feasibility of the optimized amplifier. In general, the design parameters of class-E amplifier in a WPT system for biomedical implants can be determined with the proposed optimization method in this paper.

Carrier Distortion in Hysteretic Self-Oscillating Class-D Audio Power:Amplifiers: Analysis and Optimization

OpenAIRE

Høyerby, Mikkel Christian Kofod; Andersen, Michael A. E.

2009-01-01

An important distortion mechanism in hysteretic self-oscillating (SO) class-D (switch mode) power amplifiers-–carrier distortion-–is analyzed and an optimization method is proposed. This mechanism is an issue in any power amplifier application where a high degree of proportionality between input and output is required, such as in audio power amplifiers or xDSL drivers. From an average-mode point of view, carrier distortion is shown to be caused by nonlinear variation of the hysteretic compara...

A describing function approach to bipolar RF-power amplifier simulation

DEFF Research Database (Denmark)

Vidkjær, Jens

1981-01-01

A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

2015-01-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

Minimizing Crosstalk in Self Oscillating Switch Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Ploug, Rasmus Overgaard

2012-01-01

a method to minimize this phenomenon by improving the integrity of the various power distribution systems of the amplifier. The method is then applied to an amplifier built for this investigation. The results show that the crosstalk is suppressed with 30 dB, but is not entirely eliminated......The varying switching frequencies of self oscillating switch mode audio amplifiers have been known to cause interchannel intermodulation disturbances in multi channel configurations. This crosstalk phenomenon has a negative impact on the audio performance. The goal of this paper is to present...

NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

Science.gov (United States)

Benet, James

1993-01-01

The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

Operation amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2008-01-01

To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

Design of a high power cross field amplifier at X band with an internally coupled waveguide

International Nuclear Information System (INIS)

Eppley, K.; Ko, Kwok.

1991-01-01

Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. We have developed a simulation model for CFAs using the PIC code CONDOR. Our simulations indicate that there are limits to the maximum RF field strength that a CEA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube. CONDOR simulations have identified a good operating point at X band, with power generation of over 5 MW per cm and total efficiency of over 60 percent. ARGUS simulations have modelled the cold test properties of the coupled structure. The nominal design specifications are 300 MW output, 17 db gain, frequency 11.4 GHz, dc voltage 142 kV, magnetic field 5 kG, anode cathode gap 3.6 mm, total interaction length about 60 cm. We will discuss the results of code simulations and report on the status of the experimental effort

Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

Science.gov (United States)

Ming Gu; Chakrabartty, Shantanu

2014-06-01

This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

Design, construction, and first operational results of a 5 megawatt feedback controlled amplifier system for disruption control on the Columbia University HBT-EP tokamak

International Nuclear Information System (INIS)

Reass, W.A.; Alvestad, H.A.; Bartsch, R.R.; Wurden, G.A.; Ivers, T.H.; Nadle, D.L.

1995-01-01

This paper presents the electrical design and first operational results of a 5 Megawatt feedback controlled amplifier system designed to drive a 300 uH saddle coil set on the ''HBT-EP'' tokamak. It will be used to develop various plasma feedback techniques to control and inhibit the onset of plasma disruptions that are observed in high ''B'' plasmas. To provide a well characterized system, a high fidelity, high power closed loop amplifier system has been refurbished from the Los Alamos ''ZT-P'' equilibrium feedback system. In it's configuration developed for the Columbia HBT-EP tokamak, any desired waveform may be generated within a I 100 ampere and 16 kV peak to peak dynamic range. An energy storage capacitor bank presently limits the effective full power pulse width to 10 mS. The full power bandwidth driving the saddle coil set is ∼12 kHz, with bandwidth at reduced powers exceeding 30 kHz. The system is designed similar to a grounded cathode, push-pull, transformer coupled, tube type amplifier system. 'Me push pull amplifier consists of 6 each Machlett ML8618 magnetically beamed triodes, 3 on each end of the (center tapped) coupling transformer. The transformer has .I volt-seconds of core and a 1:1 turns ratio. The transformer is specially designed for high power, low leakage inductance, and high bandwidth. Each array of ML8618's is (grid) driven with a fiber optic controlled hotdeck with a 3CXI0,000A7 (triode) output. To linearize the ML8618 grid drive, a minor feedback loop in the hotdeck is utilized. Overall system response is controlled by active feedback of the saddle coil current, derived from a coaxial current viewing resistor. The detailed electrical design of the power amplifier, transformer, and feedback system will be provided in addition to recent HBT-EP operational results

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

Science.gov (United States)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

Electron Gun and Collector Design for 94 GHz Gyro-amplifiers.

Science.gov (United States)

Nguyen, K.; Danly, B.; Levush, B.; Blank, M.; True, D.; Felch, K.; Borchard, P.

1997-05-01

The electrical design of the magnetron injection gun and collector for high average power TE_01 gyro-amplifiers has recently been completed using the EGUN(W.B. Herrmannsfeldt, AIP Conf. Proc. 177, pp. 45-58, 1988.) and DEMEOS(R. True, AIP Conf. Proc. 297, pp. 493-499, 1993.) codes. The gun employs an optimized double-anode geometry and a radical cathode cone angle of 500 to achieve superior beam optics that are relatively insensitive to electrode misalignments and field errors. Perpendicular velocity spread of 1.6% at an perpendicular to axial velocity ratio of 1.52 is obtained for a 6 A, 65 kV beam. The 1.28" diameter collector, which also serves as the output waveguide, has an average power density of < 350 W/cm^2 for a 59 kW average power beam. Details will be presented at the conference.

KrF amplifier design issues and application to inertial confinement fusion system design

International Nuclear Information System (INIS)

Sullivan, J.A.; Allen, G.R.; Berggren, R.R.

1993-01-01

Los Alamos National Laboratory has assembled an array of experimental and theoretical tools to optimize amplifier design for future single-pulse KrF lasers. The next opportunity to exercise these tools is with the design of the second-generation NIKE system under construction at the Naval Research Laboratory with the collaboration of Los Alamos National Laboratory. Los Alamos has applied these amplifier design tools to the conceptual design of a 100-kJ Laser Target Test Facility and a 3-MJ Laboratory Microfusion Facility. (author)

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

Two-stage, high power X-band amplifier experiment

International Nuclear Information System (INIS)

Kuang, E.; Davis, T.J.; Ivers, J.D.; Kerslick, G.S.; Nation, J.A.; Schaechter, L.

1993-01-01

At output powers in excess of 100 MW the authors have noted the development of sidebands in many TWT structures. To address this problem an experiment using a narrow bandwidth, two-stage TWT is in progress. The TWT amplifier consists of a dielectric (e = 5) slow-wave structure, a 30 dB sever section and a 8.8-9.0 GHz passband periodic, metallic structure. The electron beam used in this experiment is a 950 kV, 1 kA, 50 ns pencil beam propagating along an applied axial field of 9 kG. The dielectric first stage has a maximum gain of 30 dB measured at 8.87 GHz, with output powers of up to 50 MW in the TM 01 mode. In these experiments the dielectric amplifier output power is about 3-5 MW and the output power of the complete two-stage device is ∼160 MW at the input frequency. The sidebands detected in earlier experiments have been eliminated. The authors also report measurements of the energy spread of the electron beam resulting from the amplification process. These experimental results are compared with MAGIC code simulations and analytic work they have carried out on such devices

An ultra-low-power pulse oximeter implemented with an energy-efficient transimpedance amplifier.

Science.gov (United States)

Tavakoli, M; Turicchia, L; Sarpeshkar, R

2010-02-01

Pulse oximeters are ubiquitous in modern medicine to noninvasively measure the percentage of oxygenated hemoglobin in a patient's blood by comparing the transmission characteristics of red and infrared light-emitting diode light through the patient's finger with a photoreceptor. We present an analog single-chip pulse oximeter with 4.8-mW total power dissipation, which is an order of magnitude below our measurements on commercial implementations. The majority of this power reduction is due to the use of a novel logarithmic transimpedance amplifier with inherent contrast sensitivity, distributed amplification, unilateralization, and automatic loop gain control. The transimpedance amplifier, together with a photodiode current source, form a high-performance photoreceptor with characteristics similar to those found in nature, which allows LED power to be reduced. Therefore, our oximeter is well suited for portable medical applications, such as continuous home-care monitoring for elderly or chronic patients, emergency patient transport, remote soldier monitoring, and wireless medical sensing. Furthermore, our design obviates the need for an A-to-D and digital signal processor and leads to a small single-chip solution. We outline how extensions of our work could lead to submilliwatt oximeters.

Amplifier Design for Proportional Ionization Chambers

Energy Technology Data Exchange (ETDEWEB)

Baker, W. H.

1950-08-24

This paper presents the requirements of a nuclear amplifier of short resolving time, designed to accept pulses of widely varying amplitudes. Data are given which show that a proportional ionization chamber loaded with a 1,000-ohm resistor develops pulses of 0.5 microsecond duration and several volts amplitude. Results indicate that seven basic requirements are imposed on the amplifier when counting soft beta and gamma radiation in the presence of alpha particles, without absorbers. It should, (1) have a fast recovery time, (2) have a relatively good low frequency response, (3) accept pulses of widely varying heights without developing spurious pulsed, (4) have a limiting output stage, (5) preserve the inherently short rise time of the chamber, (6) minimize pulse integration, and (7) have sufficient gain to detect the weak pulses well below the chamber voltage at which continuous discharge takes place. The results obtained with an amplifier which meets these requirements is described. A formula is derived which indicates that redesign of the proportional ionization chamber might eliminate the need for an amplifier. This may be possible if the radioactive particles are collimated parallel to the collecting electrode.

Design of e-gun for large KrF amplifiers

International Nuclear Information System (INIS)

Reilly, D.A.; Von Rosenberg, C.W.

1985-01-01

The design of very large single-aperture laser amplifier for an angular multiplexed laser fusion system requires advances in excimer laser e-gun technology beyond existing designs. Scaling considerations dictate the use of multiple e-guns to pump a single laser; in the present case the authors will discuss the scaling and design features of one of the ten e-guns being developed to pump the Los Alamos Polaris Power Amplifier Module. Multiple e-guns minimize the diode self-magnetic field, lowering the size of the imposed guide magnetic field, and reducing the diode impendance collapse. Multiple guns also result in lowered current rise times, reduce the development cost of the technology at the prototype stage, and, of course, limit the cost due to operation failures in the e-gun. The present design utilizes the expanding electron flow diode to provide uniform electron flow into the gas from a high-current density cold cathode (approx. =50 A/cm 2 ). Laminated iron and an imposed dipole field are utilized for B-field shaping. The applied B field lines trace from the anode, terminate on the cathode, and are then conducted through the shank to beyond the bushing. This feature not only provides for fully expanded electron flow from cathode to anode, but it also allows for self-magnetic field insulation of the shank and bushing, thus minimizing voltage standoff distances, inductance, and rise time. A single large aspect ratio racetrack-shaped bushing on each e-gun is provided with robust grading to limit field concentration at the ends

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

Directory of Open Access Journals (Sweden)

Mahammad A. Hannan

2014-12-01

Full Text Available With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil’s mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

Science.gov (United States)

Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

2014-01-01

With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of

Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

Directory of Open Access Journals (Sweden)

Eswaran Uthirajoo

Full Text Available For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC power amplifier (PA is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR and error vector magnitude (EVM specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

Science.gov (United States)

Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

2014-01-01

For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications

Science.gov (United States)

Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

2014-01-01

For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA’s power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics. PMID:25033049

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

Directory of Open Access Journals (Sweden)

Zhou G Tong

2007-01-01

Full Text Available Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM and code-division multiple access (CDMA, have high peak-to-average power ratios (PARs. A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs, but also leads to low transmission power efficiency. Selected mapping (SLM and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

OpenAIRE

Gaunholt, Hans

2007-01-01

A design method is presented for the design of all pole lowpass active-RC filters applying operational amplifiers. The operational amplifier model used is the integrator model: omegat/s where omegat is the unity gain frequency. The design method is used for the design of a fifth order Butterworth filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in th...

Spaceflight 2 um Tm Fiber MOPA Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Fibertek proposes to design, develop, and test a spaceflight prototype 2051 nm thulium (Tm)-doped fiber amplifier (TDFA) optical master oscillator power amplifier...

Design of a transimpedance amplifier for a bio-optical fiber sensor

International Nuclear Information System (INIS)

Pola, L.; Camasa, J.; Gomez B, J.

2012-01-01

In this work we present a fairly detailed model for a photodiode coupled to an operational amplifier in the trans impedance circuit configuration, for the applications in Biotechnology. An optical signal of the fiber optic biosensor is detected by a photodiode and its photocurrent generated is introduced in the trans impedance amplifier. The proposed design uses a photodiode in photovoltaic mode, and its photocurrent is coupled to an amplifier with positive output. Finally, the trans impedance amplifier presents reliable design characteristics such as accuracy, stability, low noise, and the ability to measure photocurrent from 1nA to 100μA. (Author)

Derivation and Analysis of a Low-Cost, High-performance Analogue BPCM Control Scheme for Class-D Audio Power Amplifiers

OpenAIRE

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

2005-01-01

This paper presents a low-cost analogue control scheme for class-D audio power amplifiers. The scheme is based around bandpass current-mode (BPCM) control, and provides ample stability margins and low distortion over a wide range of operating conditions. Implementation is very simple and does not require the use of operational amplifiers. Small-signal behavior of the controller is accurately predicted, and design is carried out using standard transfer function based linear control methodology...

Fundamentals of RF and microwave transistor amplifiers

CERN Document Server

Bahl, Inder J

2009-01-01

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

2009-01-01

This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... experimentally with a 9.6-dB peak-to-average 50-kHz 16 quadrature amplitude modulation TEDS carrier, the setup providing 44-dBm (25 W) average RF output power at 400 MHz with 44% dc-to-RF efficiency state-of-the-art ACPR of less than ${-}$67 dBc, switching noise artifacts around ${-}$ 85 dBc, and an overall rms...

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

DEFF Research Database (Denmark)

Gaunholt, Hans

2007-01-01

filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in the circuit. The unity gain amplifiers have the advantage of providing low power consumption, yielding...

Investigation of Energy Consumption and Sound Quality for Class-D Audio Amplifiers using Tracking Power Supplies

DEFF Research Database (Denmark)

Yamauchi, Akira; Schneider, Henrik; Knott, Arnold

2015-01-01

power supply tracking and its influence on power losses, audio performance and environmental impact for a 130 W class-D amplifier prototype as well as a commercialized class-D amplifier. Both modeled and experimental results verify that a large improvement of efficiency can be achieved. The total...... harmonic is found to be unaffected by stepless power supply tracking due the high supply rejection ratio of the used amplifiers under test.......The main advantage of Class-D audio amplifiers is high efficiency which is often stated to be more than 90 % but at idle or low power levels the efficiency is much lower. The waste energy is an environmental concern, a concern in mobile applications where long battery operation is required...

Development and energization of IOT based RF amplifier

International Nuclear Information System (INIS)

Mandal, A.; Som, S.; Raj, P.R.; Manna, S.K.; Ghosh, S.; Seth, S.; Thakurta, S.; Thakur, S.K.; Saha, S.; Panda, U.S.

2013-01-01

A 704 MHz IOT based CW RF amplifier has been developed in VECC. It can also be used with proper tuning to power cavity modules operating at 650 MHz in high energy high intensity proton linear accelerator proposed to be built for ADSS/SNS programme in India and Project-X at Fermilab, USA. This IOT based amplifier provides up to 60 kW continuous wave RF power at 700 MHz. It required various power supplies, LCW cooling and forced air cooling for its operation. The auxiliary power supplies like Grid, Filament and Ion-pump, are floated and mounted on an isolated frame, i.e., HV deck. The mains inputs are electrically isolated by means of isolation transformer. Also, a Programmable Logic Controller (PLC) based interlocks along with high voltage collector power supply has been designed and developed for the safe operation of the RF amplifier. This paper discusses about various developments and energization of the IOT based RF amplifier with high power dummy load. (author)

A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

International Nuclear Information System (INIS)

Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

2013-01-01

We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner

Institute of Scientific and Technical Information of China (English)

Zhengdong JIANG; Kaizhe GUO; Peng HUANG; Yiming FAN; Chenxi ZHAO; Yongling BAN; Jun LIU; Kai KANG

2017-01-01

In this paper,45 GHz and 60 GHz power amplifiers (PAs) with high output power have been successfully designed by using 90 nm CMOS process.The 45 GHz (60 GHz) PA consists of two (four) differential stages.The sizes of transistors have been designed in an appropriate way so as to trade-off gain,efficiency and stability.Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional Ⅲ-Ⅴ technologies,the technique of power combining has been applied to achieve a high output power.In particular,a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA.The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly.Taking its advantages of this novel transformer based power combiner,our realized 45 GHz (60 GHz) mm-wave PA has achieved the gain of 20.3 dB (16.8 dB),the maximum PAE of 14.5％ (13.4％) and the saturated output power of 21 dBm (21 dBm) with the 1.2 V supply voltage.

Designing and development of a synchronous analogic amplifier

International Nuclear Information System (INIS)

De la Hoz, E.; Ortiz, A.

1989-01-01

A large number of electronic systems used in the measurement and analysis of weak signals involve a ''lock-in'' amplifier, because it provides an effective method for the recovery of signals buried below a considerable high level of noise. The use of the ''lock-in'' amplifier in our institutions is very limited due to the high expense and the lack of warranties for its maintenance. The purpose of the present work is to design and build a low cost ''lock-in'' amplifier using components available in the local market. Its optimization has allowed us to increase the sensitivity and linearity of the systems, making it very versatile for dedicated applications

Simulations of longitudinally pumped dye laser amplifier

International Nuclear Information System (INIS)

Takehisa, Kiwamu; Takemori, Satoshi

1995-01-01

Simulations of a copper laser pumped dye laser amplifier and new designs of the longitudinally pumped dye laser amplifier are presented. The simulations take the consideration of the amplified spontaneous emission (ASE). The new designs utilize a center-hole reflector instead of a dichroic mirror. The simulation results indicate that the poor spatial overlap between the pump beam and the dye beam in the transverse pumping not only reduces the laser output power, but also generates ASE strongly. The results also indicate that the longitudinal pumping is as efficient as the transverse pumping. (author)

High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

International Nuclear Information System (INIS)

Wu Chiasong; Lin Tah-Yeong; Wu Hsien-Ming

2010-01-01

A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 x 1.10 mm 2 , obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (HP 3 ) of -3 dBm, an output third-order intercept point (OIP 3 ) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz. (semiconductor integrated circuits)

Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

Science.gov (United States)

Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

2016-01-01

Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

Progress on the gyrocon deflection-modulated amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1982-01-01

The gyrocon is a high-power deflection-modulated amplifier that can have excellent spatial bunching and, hence, high dc-to-rf conversion efficiency. A program to design and build a prototype amplifier at 450 MHz is discussed. Peak powers of 150 kW and conversion efficiencies of 23% have been measured; the testing program is being pursued to improve this performance. Some possible mechanisms for the difference between the experimental and calculated performance are discussed

A highly linear power amplifier for WLAN

International Nuclear Information System (INIS)

Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

2016-01-01

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

CARM and harmonic gyro-amplifier experiments at 17 GHz

International Nuclear Information System (INIS)

Menninger, W.L.; Danly, B.G.; Alberti, S.; Chen, C.; Rullier, J.L.; Temkin, R.J.

1993-01-01

Cyclotron resonance maser amplifiers are possible sources for applications such as electron cyclotron resonance heating of fusion plasmas and driving high-gradient rf linear accelerators. For accelerator drivers, amplifiers or phase locked-oscillators are required. A 17 GHz cyclotron autoresonance maser (CARM) amplifier experiment and a 17 GHz third harmonic gyro-amplifier experiment are presently underway at the MIT Plasma Fusion Center. Using the SRL/MIT SNOMAD II introduction accelerator to provide a 380 kV, 180 A, 30 ns flat top electron beam, the gyro-amplifier experiment has produced 5 MW of rf power with over 50 dB of gain at 17 GHz. The gyro-amplifier operates in the TE 31 mode using a third harmonic interaction. Because of its high power output, the gyro-amplifier will be used as the rf source for a photocathode rf electron gun experiment also taking place at MIT. Preliminary gyro-amplifier results are presented, including measurement of rf power, gain versus interaction length, and the far-field pattern. A CARM experiment designed to operate in the TE 11 mode is also discussed

Design and performance of the main amplifier system for the National Ignition Facility

International Nuclear Information System (INIS)

Beullier, J; Erlandson, A; Grebot, E; Guenet, J; Guenet, M; Horvath, J; Jancaitis, K; Larson, D; Lawson, J; LeTouze, G; Maille, X; Manes, K; Marshall, C; Mengue, T; Moor, E; Payne, S; Pedrotti, L; Rotter, M; Seznec, S; Sutton, S; Zapata, L.

1999-01-01

This paper describes the design and performance of flashlamp-pumped, Nd:glass. Brewster-angle slab amplifiers intended to be deployed in the National Ignition Facility (NIF). To verify performance, we tested a full-size, three-slab-long, NIF prototype amplifier, which we believe to be the largest flashlamp-pumped Nd:glass amplifier ever assembled. Like the NIF amplifier design, this prototype amplifier had eight 40-cm-square apertures combined in a four-aperture-high by two-aperture-wide matrix. Specially-shaped reflectors, anti-reflective coatings on the blastshields, and preionized flashlamps were used to increase storage efficiency. Cooling gas was flowed over the flashlamps to remove waste pump heat and to accelerate thermal wavefront recovery. The prototype gain results are consistent with model predictions and provide high confidence in the final engineering design of the NIF amplifiers. Although the dimensions, internal positions, and shapes of the components in the NIF amplifiers will be slightly different from the prototype, these differences are small and should produce only slight differences in amplifier performance

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2011-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, S.; Nauta, Bram

2007-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

Final installation and testing of the feedback power amplifier for the Scyllac feedback experiment

International Nuclear Information System (INIS)

Kutac, K.J.; Kewish, R.W. Jr.; Gribble, R.F.; Rawcliffe, A.S.; Miller, G.; Kemp, E.L.; Bartsch, R.R.

1975-01-01

The Scyllac feedback system consists of eight subsystems. The installation and testing of the many components and eight subsystems are described. The eight subsystems are: (1) ML-8618 power amplifiers; (2) dc plate and bias power supplies; (3) ac filament power supplies; (4) position detector and signal processor (intermediate amplifier); (5) l = 0 and l = 2 output load coils; (6) control system and interlock system; (7) computer controlled analog-to-digital transient recorders; and (8) cable distribution and cooling-water supply system

On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

International Nuclear Information System (INIS)

Ren Zhixiong; Zhang Kefeng; Liu Lanqi; Li Cong; Chen Xiaofei; Liu Dongsheng; Liu Zhenglin; Zou Xuecheng

2015-01-01

Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer (PCT) and one 1.95 GHz PA using an on-chip series combining transformer (SCT) to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors (MGTR) and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE. (paper)

High-performace cladding-pumped erbium-doped fibre laser and amplifier

International Nuclear Information System (INIS)

Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

2012-01-01

We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

Optimum design of Nd-doped fiber optical amplifiers

DEFF Research Database (Denmark)

Rasmussen, Thomas; Bjarklev, Anders Overgaard; Lumholt, Ole

1992-01-01

The waveguide parameters for a Nd-doped fluoride (Nd:ZBLANP) fiber amplifier have been optimized for small-signal and booster operation using an accurate numerical model. The optimum cutoff wavelength is shown to be 800 nm and the numerical aperture should be made as large as possible. Around 80%......% booster quantum conversion efficiency can be reached for an input power of 10 dBm and a pump power of 100 mW by the use of one filter...

Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2008-01-01

An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

Solid State Power Amplifier for 805 MegaHertz at the Los Alamos Neutron Science Center

International Nuclear Information System (INIS)

Davis, J.L.; Lyles, J.T.M.

1998-01-01

Particle accelerators for protons, electrons, and other ion species often use high-power vacuum tubes for RF amplification, due to the high RF power requirements to accelerate these particles with high beam currents. The final power amplifier stages driving large accelerators are unable to be converted to solid-state devices with the present technology. In some instances, radiation levels preclude the use of transistors near beamlines. Work is being done worldwide to replace the RF power stages under about ten kilowatts CW with transistor amplifiers, due to the lower maintenance costs and obsolescence of power tubes in these ranges. This is especially practical where the stages drive fifty Ohm impedance and are not located in high radiation zones. The authors are doing this at the Los Alamos Neutron Science Center (LANSCE) proton linear accelerator (linac) in New Mexico. They replaced a physically-large air-cooled UHF power amplifier using a tetrode electron tube with a compact water-cooled unit based on modular amplifier pallets developed at LANSCE. Each module uses eight push-pull bipolar power transistor pairs operated in class AB. Four pallets can easily provide up to 2,800 watts of continuous RF at 805 MHz. A radial splitter and combiner parallels the modules. This amplifier has proven to be completely reliable after over 10,000 hours of operation without failure. A second unit was constructed and installed for redundancy, and the old tetrode system was removed in 1998. The compact packaging for cooling, DC power, impedance matching, RF interconnection, and power combining met the electrical and mechanical requirements. CRT display of individual collector currents and RF levels is made possible with built-in samplers and a VXI data acquisition unit

6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

Directory of Open Access Journals (Sweden)

Dong‐Hwan Shin

2017-10-01

Full Text Available A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W to 40.4 dBm (11 W with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

Design of a high power cross field amplifier at X band with an internally coupled waveguide

International Nuclear Information System (INIS)

Eppley, K.; Ko, K.

1991-01-01

This paper reports that cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. The authors have developed a simulation model for CFAs using the PIC code CONDOR. The authors simulations indicate that there are limits to the maximum RF field strength that a CFA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube

Bandwidth tunable amplifier for recording biopotential signals.

Science.gov (United States)

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

Science.gov (United States)

Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

2015-01-01

In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

A new principle for a high-efficiency power audio amplifier for use with a digital preamplifier

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt

1987-01-01

The use of class-B and class-D amplifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the usual principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

International Nuclear Information System (INIS)

Wang Hanchao; Huang Lirong; Shi Zhongwei

2011-01-01

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

Efficiency Investigation of Switch Mode Power Amplifier Drving Low Impedance Transducers

DEFF Research Database (Denmark)

Iversen, Niels Elkjær; Schneider, Henrik; Knott, Arnold

2015-01-01

the amplifier rail voltage requirement as a function of the voice coil nominal resistance is presented. The method is based on a crest factor analysis of music signals and estimation of the electrical power requirement from a specific target of the sound pressure level. Experimental measurements confirms a huge...... performance leap in terms of efficiency compared to a conventional battery driven sound system. Future optimization of low voltage, high current amplifiers for low impedance loudspeaker drivers are discussed....

Design of 22-way coaxial power combiner for 20 kW solid state amplifier and 6-1/8″ to N type adapter using CST microwave studio

International Nuclear Information System (INIS)

Sharma, Sonal; Mishra, J.K.; Ramarao, B.V.; Pande, Manjiri; Bhagwat, P.V.

2015-01-01

A 20 kW, 325 MHz solid state amplifier is being developed in BARC for Fermi Lab collaboration. It is proposed to combine 22 RF amplifiers to get output power of 20 kW. For this purpose a 22 way coaxial power combiner has been designed using CST microwave studio. This combiner is based on Wilkinson combining technology. The inner conductor of the combiner is split into 22 equal plates. Each plate has 1-5/8 flange at input port. These plates are connected to a common disc. The combined output is a 3-1/8 flanged port. The return loss obtained at the combined port is better than 28 dB indicating a very good match. The transmission from the combined port to each split port is about -13.5 dB representing a low insertion loss and equal split. The return loss each of the split port is obtained by simultaneous excitation of each port. The return loss at each port is better than 26 dB. Fabrication of the combiner is under process. The material used for inner conductor will be ETP copper and outer conductor will be made of aluminium. Along with the above design a separate design of 6-1/8″ to N type adapter has been completed in CST microwave studio. A number of these adapters will be used for high power waveguide load characterization which is being developed in BARC. The return loss at each port is better than 30 dB and insertion loss is less than 0.05 dB. Fabrication of these adapters is under process. (author)

Induction-linac based free-electron laser amplifiers for plasma heating

International Nuclear Information System (INIS)

Jong, R.A.

1988-01-01

We describe an induction-linac based free-electron laser amplifier that is presently under construction at the Lawrence Livermore National Laboratory. It is designed to produce up to 2 MW of average power at a frequency of 250 GHz for plasma heating experiments in the Microwave Tokamak Experiment. In addition, we shall describe a FEL amplifier design for plasma heating of advanced tokamak fusion devices. This system is designed to produce average power levels of about 10 MW at frequencies ranging form 280 to 560 GHz. 7 refs., 1 tab

Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

Science.gov (United States)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

Power Scaling of Laser Oscillators and Amplifiers Based on Nd:YVO4

OpenAIRE

Yarrow, Michael James

2006-01-01

This thesis presents a strategy for power and brightness scaling in diode-end-pumped, master-oscillator-power-amplifier laser systems, based on Nd:YVOIssues relating to further power and brightness scaling are discussed as well as the potential applications of these laser sources as pump sources for frequency conversion in optical parametric devices.

Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

CERN Document Server

Broere, J; Gómez Martínez, Y; Rossi, M

2011-01-01

Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

A highly linear power amplifier for WLAN

Science.gov (United States)

Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

2016-02-01

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

Design of band-pass push-pull stages of power amplifiers for UHF transmitters of FM and TV broadcasting

OpenAIRE

Titov, A. A.

2005-01-01

The paper considers principles of construction, peculiarities of design, and techniques of network element calculation of push-pull amplification stages in linear bipolar microwave transistors. An example of calculation and results of experimental tests of an amplifier for transmitters of FM and TV broadcasting are presented.

Impact of gain saturation on the mode instability threshold in high-power fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Lægsgaard, Jesper

2014-01-01

We present a coupled-mode model of transverse mode instability in high-power fiber amplifiers, which takes the effect of gain saturation into account. The model provides simple semi-analytical formulas for the mode instability threshold, which are valid also for highly saturated amplifiers...

A power-efficient audio amplifier combining switching and linear techniques

NARCIS (Netherlands)

van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

1999-01-01

Integrated class-D audio amplifiers are very power efficient but require an external LC reconstruction filter, which prevents further integration. Also due to this filter, large feedback factors are hard to realize, so that the load influences the distortion and transfer characteristics. The 30 W

Efficient design of gain-flattened multi-pump Raman fiber amplifiers using least squares support vector regression

Science.gov (United States)

Chen, Jing; Qiu, Xiaojie; Yin, Cunyi; Jiang, Hao

2018-02-01

An efficient method to design the broadband gain-flattened Raman fiber amplifier with multiple pumps is proposed based on least squares support vector regression (LS-SVR). A multi-input multi-output LS-SVR model is introduced to replace the complicated solving process of the nonlinear coupled Raman amplification equation. The proposed approach contains two stages: offline training stage and online optimization stage. During the offline stage, the LS-SVR model is trained. Owing to the good generalization capability of LS-SVR, the net gain spectrum can be directly and accurately obtained when inputting any combination of the pump wavelength and power to the well-trained model. During the online stage, we incorporate the LS-SVR model into the particle swarm optimization algorithm to find the optimal pump configuration. The design results demonstrate that the proposed method greatly shortens the computation time and enhances the efficiency of the pump parameter optimization for Raman fiber amplifier design.

A noise reconfigurable current-reuse resistive feedback amplifier with signal-dependent power consumption for fetal ECG monitoring

NARCIS (Netherlands)

Song, Shuang; Rooijakkers, M.J.; Harpe, P.; Rabotti, C.; Mischi, M.; Van Roermund, A.H.M.; Cantatore, E.

2016-01-01

This paper presents a noise-reconfigurable resistive feedback amplifier with current-reuse technique for fetal ECG monitoring. The proposed amplifier allows for both tuning of the noise level and changing the power consumption according to the signal properties, minimizing the total power

The design of a linear amplifier for very small DC-currents, called LASC

International Nuclear Information System (INIS)

Stroem, S.; Storruste, A.

1989-12-01

A linear amplifier for the monitoring of very small currents from a high pressure ionization chamber has been designed. In the traditional design of an ionization chamber current amplifier, selected semiconductors and resistors are chosen to measure the very small currents in question. As the leakage currents in these semiconductors are larger than the smallest currents to be measured, very sophisticated electronics must be employed to succeed with the design. In order to overcome this disadvantage, the reported design is based on the following basic features: A capacitor is charged by the chamber ion current during a fixed time period, without loading the amplifier input. The use of a peak detector makes bouncing of the time-lag relay contacts unimportant, and allows an analog-to-digital converter to store the voltage build-up in the capacitor as a digital value. The measuring range of the amplifier, 0.001 pA to 1000 pA, makes it suitable for measuring gamma radiation in the air, both under normal and abnormal conditions. The design of the amplifier is described and results from tests are presented. 6 refs.; 6 figs.; 3 tabs

Cryogenic cooling for high power laser amplifiers

Directory of Open Access Journals (Sweden)

Perin J.P.

2013-11-01

Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

NARCIS (Netherlands)

Pelk, M.J.; Neo, W.C.E.; Gajadharsing, J.R.; Pengelly, R.S.; De Vreede, L.C.N.

2008-01-01

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as

Low-voltage CMOS operational amplifiers theory, design and implementation

CERN Document Server

Sakurai, Satoshi

1995-01-01

Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

NINO An ultra-fast and low-power front-end amplifier/discriminator ASIC designed for the multigap resistive plate chamber

CERN Document Server

Anghinolfi, F; Martemyanov, A N; Usenko, E; Wenninger, Horst; Williams, M C S; Zichichi, A

2004-01-01

For the full exploitation of the excellent timing properties of the Multigap Resistive Plate Chamber (MRPC), front-end electronics with special characteristics are needed. These are (a) differential input, to profit from the differential signal from the MRPC (b) a fast amplifier with less than 1 ns peaking time and (c) input charge measurement by Time-Over-Threshold for slewing correction. An 8- channel amplifier and discriminator chip has been developed to match these requirements. This is the NINO ASIC, fabricated with 0.25 omegam CMOS technology. The power requirement at 40mW/channel is low. Results on the performance of the MRPCs using the NINO ASIC are presented. Typical time resolution a of the MRPC system is in the 50 ps range, with an efficiency of 99.9%.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

NIF/LMJ prototype amplifier mechanical design

International Nuclear Information System (INIS)

Horvath, J.

1996-10-01

Amplifier prototypes for the National Ignition Facility and the Laser Megajoule will be tested at Lawrence Livermore National Laboratory. The prototype amplifier, which is an ensemble of modules from LLNL and Centre d'Etudes de Limeil-Valenton, is cassette-based with bottom access for maintenance. A sealed maintenance transfer vehicle which moves optical cassettes between the amplifier and the assembly cleanroom, and a vacuum gripper which holds laser slabs during cassette assembly will also be tested. The prototype amplifier will be used to verify amplifier optical performance, thermal recovery time, and cleanliness of mechanical operations

An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

Directory of Open Access Journals (Sweden)

Paulina M. Maya-Hernández

2014-08-01

Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

Design and evaluation of laser diodes with distributed bragg reflectors and diffracted waves amplifiers bound to their association into a powerful coherent source; Conception et Evaluation de Diodes Laser a Reflecteurs de Bragg Distribues et d`amplificateurs a onde Diffractee et vue de leur Association en une Source Coherente de Puissance

Energy Technology Data Exchange (ETDEWEB)

Dagens, B.

1995-09-29

This work is concerned with the evaluation of AlGaAs/GaAs MOPAs (Master Oscillator Power Amplifier) based on the association of a distributed Bragg reflector (DBR) quantum well laser diode with an optical power amplifier. For any given structure and incident wave, the software SIMLAS allows to describe the behaviour of a travelling wave amplifier and to obtain its working characteristics including the output power, the amplified spontaneous emission and the quality of the output beam. This model takes into account the nonlinear interaction between the wave, the injected carriers distribution and the complex index of the structure. The application of the software to a flared non-guided amplified shows that the output power associated with a good beam quality is limited to a range less than one watt. Then a new design is proposed to greatly improve this performance. The modelling software of the DBR laser takes into account wave propagation in a second-order grating structure and the gain and absorption properties in the quantum well. Thus, the output optical power, efficiency, threshold current and model discrimination of the device can be predicted. The model has been used to establish the definition of design criteria in order to promote edge emission relative to surface emission. Finally the fabrication of each device is established. Special attention is paid to the design of the grating region. The fabrication process is validated by the prototypes performance. (author) refs.

Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

2011-01-01

We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

Design of adaptive filter amplifier in UV communication based on DSP

Science.gov (United States)

Lv, Zhaoshun; Wu, Hanping; Li, Junyu

2016-10-01

According to the problem of the weak signal at receiving end in UV communication, we design a high gain, continuously adjustable adaptive filter amplifier. Based on proposing overall technical indicators and analyzing its working principle of the signal amplifier, we use chip LMH6629MF and two chips of AD797BN to achieve three-level cascade amplification. And apply hardware of DSP TMS320VC5509A to implement digital filtering. Design and verification by Multisim, Protel 99SE and CCS, the results show that: the amplifier can realize continuously adjustable amplification from 1000 to 10000 times without distortion. Magnification error is <=%4@1000 10000. And equivalent input noise voltage of amplification circuit is <=6 nV/ √Hz @30KHz 45KHz, and realizing function of adaptive filtering. The design provides theoretical reference and technical support for the UV weak signal processing.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

A New Principle for a High Efficiency Power Audio Amplifier for Use with a Digital Preamplifier

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt

1986-01-01

The use of class-B and class-D amlifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore, a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the current principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

Energy Technology Data Exchange (ETDEWEB)

Gaspar, M., E-mail: marcos.gaspar@psi.c [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Pedrozzi, M. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Ferreira, L.F.R. [Department of Physics, University of Coimbra, 3004-516 Coimbra (Portugal); Garvey, T. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland)

2011-05-01

We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

International Nuclear Information System (INIS)

Gaspar, M.; Pedrozzi, M.; Ferreira, L.F.R.; Garvey, T.

2011-01-01

We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

Science.gov (United States)

Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

2012-01-01

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

A high power, continuous-wave, single-frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

International Nuclear Information System (INIS)

Stappel, M; Steinborn, R; Kolbe, D; Walz, J

2013-01-01

We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52%. Two different approaches to frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO 3 crystal and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate crystal in an external enhancement cavity. (paper)

Design and production of a new surface mount charge-integrating amplifier for CDF

Energy Technology Data Exchange (ETDEWEB)

Nelson, C.; Drake, G.

1991-12-31

We present our experiences in designing and producing 26,000 new charge-integrating amplifiers for CDF, using surface-mount components. The new amplifiers were needed to instrument 920 new 24-channel CDF RABBIT boards, which are replacing an older design rendered obsolete by increases in the collision rate. Important design considerations were frequency response, physical size and cost. 5 refs.

Design and production of a new surface mount charge-integrating amplifier for CDF

International Nuclear Information System (INIS)

Nelson, C.; Drake, G.

1991-01-01

We present our experiences in designing and producing 26,000 new charge-integrating amplifiers for CDF, using surface-mount components. The new amplifiers were needed to instrument 920 new 24-channel CDF RABBIT boards, which are replacing an older design rendered obsolete by increases in the collision rate. Important design considerations were frequency response, physical size and cost. 5 refs

Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

Institute of Scientific and Technical Information of China (English)

ZHANG Peng; WU Si-liang; ZHANG Qin

2008-01-01

To compensate for nonlinear distortion introduced by RF power amplifiers (PAs) with memory effects, two correlated models, namely an extended memory polynomial (EMP) model and a memory lookup table (LUT) model, are proposed for predistorter design. Two adaptive digital predistortion (ADPD) schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square (RLS) algorithm, and the other utilizes the memory LUT model and the least mean square (LMS) algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

Volterra series based predistortion for broadband RF power amplifiers with memory effects

Institute of Scientific and Technical Information of China (English)

Jin Zhe; Song Zhihuan; He Jiaming

2008-01-01

RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

Development of a high power millimeter wave free-electron laser amplifier

International Nuclear Information System (INIS)

Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Rodgers, J.; Freund, H.P.

1992-01-01

Progress on the development of a high-average-power millimeter wave free-electron laser amplifier is reported. Successful sheet electron beam propagation has been observed through a 54 cm long wiggler magnet. One hundred percent transport efficiency is reported with a 15 A, 0.1 cm x 2.0 cm, sheet electron beam through B w = 5.1 kG, λ w = 0.96 cm, planar electromagnet wiggler. Preliminary success with a novel, yet simple, method of side focusing using offset poles is reported. Status of development on a 94 GHz, 180 kW, pulsed amplifier is discussed with results from numerical simulation

Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2004-01-01

This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...

Object-oriented wavefront correction in an asymmetric amplifying high-power laser system

Science.gov (United States)

Yang, Ying; Yuan, Qiang; Wang, Deen; Zhang, Xin; Dai, Wanjun; Hu, Dongxia; Xue, Qiao; Zhang, Xiaolu; Zhao, Junpu; Zeng, Fa; Wang, Shenzhen; Zhou, Wei; Zhu, Qihua; Zheng, Wanguo

2018-05-01

An object-oriented wavefront control method is proposed aiming for excellent near-field homogenization and far-field distribution in an asymmetric amplifying high-power laser system. By averaging the residual errors of the propagating beam, smaller pinholes could be employed on the spatial filters to improve the beam quality. With this wavefront correction system, the laser performance of the main amplifier system in the Shen Guang-III laser facility has been improved. The residual wavefront aberration at the position of each pinhole is below 2 µm (peak-to-valley). For each pinhole, 95% of the total laser energy is enclosed within a circle whose diameter is no more than six times the diffraction limit. At the output of the main laser system, the near-field modulation and contrast are 1.29% and 7.5%, respectively, and 95% of the 1ω (1053 nm) beam energy is contained within a 39.8 µrad circle (6.81 times the diffraction limit) under a laser fluence of 5.8 J cm-2. The measured 1ω focal spot size and near-field contrast are better than the design values of the Shen Guang-III laser facility.

Design and experimental results of coaxial circuits for gyroklystron amplifiers

International Nuclear Information System (INIS)

Flaherty, M.K.E.; Lawson, W.; Cheng, J.; Calame, J.P.; Hogan, B.; Latham, P.E.; Granatstein, V.L.

1994-01-01

At the University of Maryland high power microwave source development for use in linear accelerator applications continues with the design and testing of coaxial circuits for gyroklystron amplifiers. This presentation will include experimental results from a coaxial gyroklystron that was tested on the current microwave test bed, and designs for second harmonic coaxial circuits for use in the next generation of the gyroklystron program. The authors present test results for a second harmonic coaxial circuit. Similar to previous second harmonic experiments the input cavity resonated at 9.886 GHz and the output frequency was 19.772 GHz. The coaxial insert was positioned in the input cavity and drift region. The inner conductor consisted of a tungsten rod with copper and ceramic cylinders covering its length. Two tungsten rods that bridged the space between the inner and outer conductors supported the whole assembly. The tube produced over 20 MW of output power with 17% efficiency. Beam interception by the tungsten rods resulted in minor damage. Comparisons with previous non-coaxial circuits showed that the coaxial configuration increased the parameter space over which stable operation was possible. Future experiments will feature an upgraded modulator and beam formation system capable of producing 300 MW of beam power. The fundamental frequency of operation is 8.568 GHz. A second harmonic coaxial gyroklystron circuit was designed for use in the new system. A scattering matrix code predicts a resonant frequency of 17.136 GHz and Q of 260 for the cavity with 95% of the outgoing microwaves in the desired TE032 mode. Efficiency studies of this second harmonic output cavity show 20% expected efficiency. Shorter second harmonic output cavity designs are also being investigated with expected efficiencies near 34%

Design and Development of Advanced Lock-in Amplifier and its Application

Directory of Open Access Journals (Sweden)

Bhagyajyothi

2013-06-01

Full Text Available Lock-in amplifiers are used to process the analog signals even in the presence of noise sources of greater amplitude. In the present study, an attempt is made to design a C8051F060 microcontroller based lock-in amplifier. The microcontroller contains all the on-chip features to design a single-chip lock-in amplifier. The reference signal for lock-in amplifier is generated by on-chip digital-to-analog converter (DAC and timer. The signal whose amplitude is to be measured is acquired by on-chip ADC. The ADC values are directly stored on to XRAM through on-chip DMA controller. Later, these stored values are processed by using quadrature sampling method to get amplitude and phase of the 100 waves. The amplitude and phase values of 100 waves are averaged to eliminate the random noise of the signal and are displayed on the LCD module. The amplitude and phase are sent to the PC through on-chip serial port (UART to store/plot the graph. The proposed lock-in amplifier is applied to study the phase transitions of sulfur sample by varying the temperature at slow rate (0.3 °C/min using microcontroller based temperature control system.

A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

NARCIS (Netherlands)

Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

1999-01-01

ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

Directory of Open Access Journals (Sweden)

Kyung-Tae Bae

2017-11-01

Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

The design of programme-controlled gain and linear pulse amplifier

International Nuclear Information System (INIS)

Guan Xuemei; Chen Chunkai; Northeast Normal Univ., Changchun; Qiao Shuang; Zhou Chuansheng

2006-01-01

The authors have designed a kind of new-style programme-controlled gain and linear pulse amplifier with accurate gausses of CR-RC-CR shaping circuit structure. The use of non-volatile digital electric potential device and accurate operational amplifier makes the circuit structure simple greatly, makes the ability stronger that resists assault. It can realize multistage gain in succession and make the drift of temperature low and make the linearity of pulse well. (authors)

Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200 μW.

Science.gov (United States)

Bolpasi, V; von Klitzing, W

2010-11-01

A 1 W tapered amplifier requiring only 200 μW of injection power at 780 nm is presented in this paper. This is achieved by injecting the seeding light into the amplifier from its tapered side and feeding the amplified light back into the small side. The amplified spontaneous emission of the tapered amplifier is suppressed by 75 dB. The double-passed tapered laser, presented here, is extremely stable and reliable. The output beam remains well coupled to the optical fiber for a timescale of months, whereas the injection of the seed light did not require realignment for over a year of daily operation.

Some aspects of powerful lasers and aspheric lenses design

International Nuclear Information System (INIS)

Metz, Jean de

1976-01-01

Gigawatt power glass lasers are described. Geometrical, interferometric, coherence and focusing aspects of the beam are measured. Design of disc amplifier is shown with high gain glass. Aspheric lenses are designed and tested for focussing these beams. Experiments of multi-breakdown in gas are done. We get fusion in plasma made by second harmonic frequency of our 1.06 μ beam. Effect of self-focussing on laser beam quality is studied. (author) [fr

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

2013-11-15

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Science.gov (United States)

Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

2013-11-01

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

Science.gov (United States)

Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

2018-02-01

The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

High Efficiency GPS Block III L1 band Envelope Tracking Power Amplifier

Science.gov (United States)

2016-03-31

intermo asymmetric ri nction and is d 30.69MHz w measured with pe Amplifier e CGH40120F Sub-System: F e RFPA and E Fig. 7: Nati The switcher the...Paul T. The Efficiency W ack Power Am Dongsu Ki Bumman, "Hi lator for Enve ess Componen Hassan, M. ing power-sup z LTE Envelop ts Conference

Behavioral modeling of microwave power amplifiers using a look up table method

NARCIS (Netherlands)

Shen, Y.; Gajadharsing, J.; Tauritz, J.L.

2007-01-01

The possibility of building a microwave power amplifier (PA) behavioral model based on the look-up table principle is investigated. The model so constructed avoids the difficulties in model structure selection and/or its parameter estimation.

Theoretical analysis of mode instability in high-power fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

2013-01-01

We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo......-optic effect, leading to transverse mode instability. The temporal and spectral characteristics of the instability dynamics are investigated, and it is shown that the instability can be seeded by both quantum noise and signal intensity noise, while pure phase noise of the signal does not induce instability...

A novel low-voltage operational amplifier for low-power pipelined ADCs

International Nuclear Information System (INIS)

Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian

2009-01-01

A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.

2013-12-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.; Hammi, Oualid; Al-Naffouri, Tareq Y.

2013-01-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

Directory of Open Access Journals (Sweden)

Dong-Hwan Shin

2017-10-01

Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Study of complete interconnect reliability for a GaAs MMIC power amplifier

Science.gov (United States)

Lin, Qian; Wu, Haifeng; Chen, Shan-ji; Jia, Guoqing; Jiang, Wei; Chen, Chao

2018-05-01

By combining the finite element analysis (FEA) and artificial neural network (ANN) technique, the complete prediction of interconnect reliability for a monolithic microwave integrated circuit (MMIC) power amplifier (PA) at the both of direct current (DC) and alternating current (AC) operation conditions is achieved effectively in this article. As a example, a MMIC PA is modelled to study the electromigration failure of interconnect. This is the first time to study the interconnect reliability for an MMIC PA at the conditions of DC and AC operation simultaneously. By training the data from FEA, a high accuracy ANN model for PA reliability is constructed. Then, basing on the reliability database which is obtained from the ANN model, it can give important guidance for improving the reliability design for IC.

The Dynamics of Multiple Pair-Wise Collisions in a Chain for Designing Optimal Shock Amplifiers

Directory of Open Access Journals (Sweden)

Bryan Rodgers

2009-01-01

Full Text Available The major focus of this work is to examine the dynamics of velocity amplification through pair-wise collisions between multiple masses in a chain, in order to develop useful machines. For instance low-cost machines based on this principle could be used for detailed, very-high acceleration shock-testing of MEMS devices. A theoretical basis for determining the number and mass of intermediate stages in such a velocity amplifier, based on simple rigid body mechanics, is proposed. The influence of mass ratios and the coefficient of restitution on the optimisation of the system is identified and investigated. In particular, two cases are examined: in the first, the velocity of the final mass in the chain (that would have the object under test mounted on it is maximised by defining the ratio of adjacent masses according to a power law relationship; in the second, the energy transfer efficiency of the system is maximised by choosing the mass ratios such that all masses except the final mass come to rest following impact. Comparisons are drawn between both cases and the results are used in proposing design guidelines for optimal shock amplifiers. It is shown that for most practical systems, a shock amplifier with mass ratios based on a power law relationship is optimal and can easily yield velocity amplifications of a factor 5–8 times. A prototype shock testing machine that was made using above principles is briefly introduced.

High efficiency RF amplifier development over wide dynamic range for accelerator application

Science.gov (United States)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Design and development of power supplies at VECC for accelerators

International Nuclear Information System (INIS)

Thakur, S.K.

2013-01-01

Several power supplies have been designed and developed in-house incorporating various topologies to match the load requirements. Most of the power supplies have been being utilised in K-130 and K-500 cyclotrons operation successfully from last several years. Amongst other types, Switching Mode PS (SMPS), Phase Controlled Rectifier (PCR), Linear mode power supply are mostly in use, irrespective of their own merits and demerits. Switching mode power supply (SMPS) is most common topology for various applications ranging from high current to high voltage applications. Due to low stored energy and faster response, the SMPS incorporating Pulse Switch Modulation (PSM) configuration is most suitable for high voltage DC power supply at larger power compared to its counterparts, makes possible to operate the power system without crowbar. For an IOT cathode power supply, a 200kW at - 40kV High voltage power supply is under development incorporating SMPS and PSM technique. Earlier, High Voltage power supply was made by using Tetrode Tube in linear mode for RF amplifier for K-130 Cyclotron. Later, in K-500 Cyclotron, a High Voltage power supply was developed incorporating PCR topology rated at 20kV, 20 Amp for Anodes for 3 nos. of RF amplifiers. These HV power supply is equipped with ultra-fast acting Crowbar Protection System developed in VECC which is for the protection of costly RF Tubes against the internal arc. Design and development of SMPS based Bipolar Power Supply with 4-Quadrant operation rated at ± 27 V, ± 300 Amp with current stability around 100 ppm for Super-conducting Magnets along with quench protection and energy dumping scheme. (author)

Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

Energy Technology Data Exchange (ETDEWEB)

Bargallo, E., E-mail: enric.bargallo-font@upc.edu [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Giralt, A.; Martinez, G. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Weber, M.; Regidor, D.; Arroyo, J.M. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain); Abal, J.; Dies, J.; Tapia, C.; De Blas, A. [Fusion Energy Engineering Laboratory (FEEL), Technical University of Catalonia (UPC) Barcelona-Tech, Barcelona (Spain); Mendez, P.; Ibarra, A.; Molla, J. [Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas, Madrid (Spain)

2013-10-15

Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives.

Availability, reliability and logistic support studies of the RF power system design options for the IFMIF accelerator

International Nuclear Information System (INIS)

Bargallo, E.; Giralt, A.; Martinez, G.; Weber, M.; Regidor, D.; Arroyo, J.M.; Abal, J.; Dies, J.; Tapia, C.; De Blas, A.; Mendez, P.; Ibarra, A.; Molla, J.

2013-01-01

Highlights: ► Current RF system design based on tetrodes chains is evaluated. ► Alternative solid state power amplifiers RF system design is analyzed. ► Both designs are compared in terms of availability, logistics and cost. ► It is concluded that solid state option presents relevant improvements. -- Abstract: The current design of the radio frequency (RF) power system for the International Fusion Materials Irradiation Facility (IFMIF) is based upon tetrodes technology. Due to the improvement in the solid state amplifiers technology, the possibility of using this option for IFMIF RF system is becoming a very competitive alternative presenting from the beginning several advantages in terms of availability, reliability and logistics. The current design based on RF tetrodes chains leads no room for substantial improvements in terms of availability being the requirement for the RF system hard to achieve. The principal goals of this paper are to use RAMI (Reliability, Availability, Maintainability and Inspectionability) analysis in the solid state amplifier design, and to compare the availability, reliability and logistic performances for both alternatives

Augmented twin-nonlinear two-box behavioral models for multicarrier LTE power amplifiers.

Science.gov (United States)

Hammi, Oualid

2014-01-01

A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square error by up to 3 dB for the same number of coefficients when compared to state-of-the-art twin-nonlinear two-box models. Furthermore, the augmented twin-nonlinear two-box models lead to the same performance as previously reported twin-nonlinear two-box models while requiring up to 80% less coefficients.

A digitally assisted, signal folding neural recording amplifier.

Science.gov (United States)

Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

2014-08-01

A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

Muscle trade-offs in a power-amplified prey capture system.

Science.gov (United States)

Blanco, M Mendoza; Patek, S N

2014-05-01

Should animals operating at great speeds and accelerations use fast or slow muscles? The answer hinges on a fundamental trade-off: muscles can be maximally fast or forceful, but not both. Direct lever systems offer a straightforward manifestation of this trade-off, yet the fastest organisms use power amplification, not direct lever action. Power-amplified systems typically use slow, forceful muscles to preload springs, which then rapidly release elastic potential energy to generate high speeds and accelerations. However, a fast response to a stimulus may necessitate fast spring-loading. Across 22 mantis shrimp species (Stomatopoda), this study examined how muscle anatomy correlates with spring mechanics and appendage type. We found that muscle force is maximized through physiological cross-sectional area, but not through sarcomere length. Sit-and-wait predators (spearers) had the shortest sarcomere lengths (fastest contractions) and the slowest strike speeds. The species that crush shells (smashers) had the fastest speeds, most forceful springs, and longest sarcomeres. The origin of the smasher clade yielded dazzlingly high accelerations, perhaps due to the release from fast spring-loading for evasive prey capture. This study offers a new window into the dynamics of force-speed trade-offs in muscles in the biomechanical, comparative evolutionary framework of power-amplified systems. © 2014 The Author(s). Evolution © 2014 The Society for the Study of Evolution.

Integrated circuit amplifiers for multi-electrode intracortical recording.

Science.gov (United States)

Jochum, Thomas; Denison, Timothy; Wolf, Patrick

2009-02-01

Significant progress has been made in systems that interpret the electrical signals of the brain in order to control an actuator. One version of these systems senses neuronal extracellular action potentials with an array of up to 100 miniature probes inserted into the cortex. The impedance of each probe is high, so environmental electrical noise is readily coupled to the neuronal signal. To minimize this noise, an amplifier is placed close to each probe. Thus, the need has arisen for many amplifiers to be placed near the cortex. Commercially available integrated circuits do not satisfy the area, power and noise requirements of this application, so researchers have designed custom integrated-circuit amplifiers. This paper presents a comprehensive survey of the neural amplifiers described in publications prior to 2008. Methods to achieve high input impedance, low noise and a large time-constant high-pass filter are reviewed. A tutorial on the biological, electrochemical, mechanical and electromagnetic phenomena that influence amplifier design is provided. Areas for additional research, including sub-nanoampere electrolysis and chronic cortical heating, are discussed. Unresolved design concerns, including teraohm circuitry, electrical overstress and component failure, are identified.

Implementation of amplifiers, control and safety subsystems of radiofrequency system of VINCY Cyclotron

International Nuclear Information System (INIS)

Drndarevic, V.; Obradovic, M.; Samardic, B.; Djuric, B.; Bojovic, B.; Trajic, M.I.; Golubicic, Z.; Smiljakovic, V.

1996-01-01

Concept and design of power amplifiers, control subsystem and safety subsystems for the RF system of the VINCY cyclotron are described. The power amplifiers subsystem consists of two amplifiers of 30 kW nominal power that operate in class B or class C. High stability of voltage amplitude of 5x10 -4 and phase stability between two resonators better than ± 0.5 0 in the range from 16.5 to 31 MHz is being providing by RF control subsystem. Autonomous safety system serves to protect staff from high voltage and to protect equipment from damage. (author)

Phase noise in RF and microwave amplifiers.

Science.gov (United States)

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

A system for biasing a differential amplifier

International Nuclear Information System (INIS)

Barbier, Daniel; Ittel, J.M.; Poujois, Robert

1975-01-01

This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

A megajoule class krypton fluoride amplifier for single shot, high gain ICF application

International Nuclear Information System (INIS)

Rose, E.; Hanson, D.; Krohn, B.; McLeod, J.; Kang, M.

1988-01-01

A design study is underway to define the optimal architecture for a KrF laser system which will deliver 10 MJ of 248-nm light to an ICF target. We present one approach which incorporates final power amplifiers in the megajoule class, achieving 10 MJ with four final amplifiers. Each double-pass laser amplifier employs two-sided electron-beam pumping of the laser gas medium. Details of the design are based on a Monte-Carlo electron-beam deposition code, a one-dimensional, time-dependent kinetics code, and pulsed power circuit modeling. Linear dimensions of the amplifier's extracted gain volume are 6.25 m in height and length and 5.12 m in width. Each amplifier handles 160 angularly multiplexed laser channels. The one-amagat, krypton-rich laser medium is e-beam pumped at 60-kW cm/sup /minus/3/ (4-MA at3.3-MV) over the 2-microsecond duration of the laser beam pulse train. 5 refs., 4 figs

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

IOT based RF power systems as an alternative to klystron amplifier in Indus-2 at the rate 505.812 MHz

International Nuclear Information System (INIS)

Deo, R.K.; Jain, M.K.; Kumar, Gautam; Lad, Mahendra; Badapanda, M.K.; Bagre, Sunil; Upadhyay, Rinki; Tripathi, Akhilesh; Rao, J.N.; Pandiyar, Mohan; Hannurkar, P.R.

2013-01-01

Due to non-availability of replacement Klystron tube in Indus-2, an IOT based high power RF amplifier system is realized. It is based on E2V make 80 kW IOTD2130 tube with its circuit assembly IMD2000ST. This amplifier system is easily available commercially due to its application in DTV broadcast. It has inherent advantages over klystron amplifier viz. high efficiency (η), less phase and amplitude sensitivity to HV ripple, higher linearity, compactness and less cooling requirement. This high power IOT amplifier is tested with its required control system, cooling system, electron gun auxiliary supplies, beam supply and focusing supply. The nominal beam voltage for this IOT is -36 kV however amplifier was tested successfully with indigenously developed -32 kV, crowbar less power supply. The optimum load impedance for IOT beam was calculated for this bias voltage ( 32kV). For the required load impedance, coupling coefficient (β) of output coupler to the O/P cavity was estimated and accordingly loop angle was adjusted. The amplifier has been tested up to 50 kW with amplifier efficiency 60% and gain 23 dB at - 32 kV beam voltage. (author)

Frequency dependent loss analysis and minimization of system losses in switchmode audio power amplifiers

DEFF Research Database (Denmark)

Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

2014-01-01

In this paper, frequency dependent losses in switch-mode audio power amplifiers are analyzed and a loss model is improved by taking the voltage dependence of the parasitic capacitance of MOSFETs into account. The estimated power losses are compared to the measurement and great accuracy is achieved...

Design windows of laser fusion power plants and conceptual design of laser-diode pumped slab laser

International Nuclear Information System (INIS)

Kozaki, Y.; Eguchi, T.; Izawa, Y.

1999-01-01

An analysis of the design space available to laser fusion power plants has been carried out, in terms of design key parameters such as target gain, laser energy and laser repetition rate, the number of fusion react ion chambers, and plant size. The design windows of economically attractive laser fusion plants is identified with the constraints of key design parameters and the cost conditions. Especially, for achieving high repetition rate lasers, we have proposed and designed a diode-pumped solid-state laser driver which consists of water-cooled zig-zag path slab amplifiers. (author)

The Design of Operational Amplifier for Low Voltage and Low Current Sound Energy Harvesting System

Science.gov (United States)

Fang, Liew Hui; Rahim, Rosemizi Bin Abd; Isa, Muzamir; Idris Syed Hassan, Syed; Ismail, Baharuddin Bin

2018-03-01

The objective of this paper is to design a combination of an operational amplifier (op-amp) with a rectifier used in an alternate current (ac) to direct current (dc) power conversion. The op-amp was designed to specifically work at low voltage and low current for a sound energy harvesting system. The goal of the op-amp design with adjustable gain was to control output voltage based on the objectives of the experiment conducted. The op-amp was designed for minimum power dissipation performance, with the means of increasing the output current when receiving a large amount of load. The harvesting circuits which designed further improved the power output efficiency by shortening the fully charged time needed by a supercapacitor bank. It can fulfil the long-time power demands for low power device. Typically, a small amount of energy sources were converted to electricity and stored in the supercapacitor bank, which was built by 10 pieces of capacitors with 0.22 F each, arranged in parallel connection. The highest capacitance was chosen based on the characteristic that have the longest discharging time to support the applications of a supercapacitor bank. Testing results show that the op-amp can boost the low input ac voltage (∼3.89 V) to high output dc voltage (5.0 V) with output current of 30 mA and stored the electrical energy in a big supercapacitor bank having a total of 2.2 F, effectively. The measured results agree well with the calculated results.

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Directory of Open Access Journals (Sweden)

Andreas Schmitt-Sody

2008-01-01

Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Analysis of Lifetime Data for the Linac 201 MHz Power Amplifiers

International Nuclear Information System (INIS)

McCrory, Elliot; Webber, Robert C.

2002-01-01

This document analyzes data on the lifetime of the 201-MHz triode power amplifier (PA) vacuum tube, model number 7835, used in the low-energy half of the Linac. We observe that a 7835 power amplifier vacuum tube has historically provided about one and one-third years service in the Linac. The lifetime of recently re-manufactured tubes is somewhat less, but it is not clear if this is because the manufacturer is ''loosing their touch,'' or because tubes cannot be effectively rebuilt after a certain number of times. Taking into account the expected tube lifetimes, the statistical fluctuations on this number, and the amount of time it takes for the manufacturer to make good tubes, we require about 14 tubes either operating, ready as good spares or being manufactured, in order to have sufficient spares to run the Linac. As a hedge against supplier drop out, we need to increase our inventory of good spare tubes by about three tubes per year for the next few years

A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

Directory of Open Access Journals (Sweden)

Shichang Chen

2018-01-01

Full Text Available This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.

Design techniques and measured performance for a uniformly-pumped 4-cm diameter rod amplifier

International Nuclear Information System (INIS)

Linford, G.J.; Yarema, S.M.

1976-01-01

A solid-state laser rod amplifier of moderate aperture achieving a high degree of spatial gain uniformity has been constructed and its performance evaluated. Digital and analogue techniques were used to optimize the amplifier design for performance in a laser fusion application. Results of simple 2-D computer simulations and experimental evaluations of amplifier performance are presented

High power X-band coaxial amplifier experiments

International Nuclear Information System (INIS)

Davis, T.J.; Nation, J.A.

1991-01-01

Studies are continuing on the development of X-band coaxial microwave amplifiers as a source for next generation linear colliders. Coaxial amplifiers employ an annular electron beam propagating between inner and outer drift tube conductors, a configuration which allows large increases in beam current over standard pencil beam amplifiers. Large average diameter systems may still be used without mode competition since TM mode cutoff frequencies are controlled by the separation between conductors. A number of amplifier configurations are being studied, all primed by a driven initial cavity which resonates around 9 GHz. Simple theory of coaxial systems and particle-in-cell simulations are presented, as well as initial experimental results using a 420 keV, 7-8 kA, 9 cm diameter annular beam

Audio power amplifier techniques with energy efficient power conversion. Vol. 1

Energy Technology Data Exchange (ETDEWEB)

Nielsen, Karsten

1998-04-01

A fundamental study of both analog and digital pulse modulation methods is carried out. A novel class of multi-level pulse modulation methods - Phase Shifted Carrier Pulse Width Modulation (PSCPWM) - is introduced and show to have several advantageous features, primarily caused by the much improved synthesis of the modulating signal. Enhanced digital pulse modulation methods for digital Pulse Modulation Amplifier (PMA) systems are investigated, and a simple methodology for digital PWM modulator synthesis is devised. It is concluded, that the modulator performance is not a limitation in the system, regardless of the domain of modulator implementation. Power conversion in PMA systems is adressed from the perspective of both linearity and efficienty optimization. Based on detailed studies of the distortion mechanisms in the power conversion stage it is concluded, that this is the fundamental limitation on system performance due to several physical limitations. The analysis of general power stage efficiency concludes that dramatic improvements in energy efficiency are possible with PMA systems that are optimized for efficiency. A control system design methodology is devised as a platform for synthesis of robust control systems. Investigations of three fundamental control structures show that even simple control systems offer a remarkable value, although the considered topologies also have their limitations which is verified by practical evaluation in hardware. A novel control method is introduced - Multivariable Enhanced Cascade Control (MECC). MECC provides flexible control over all essential system parameters and is furthermore simple in realization. Practical evaluation of a MECC based PMA shows state-of-the-art performance. The application of non-linear control methods is investigated with the introduction of an enhanced non-linear control/modulator topology. Although the non-linear controller is theoretically interesting, the method proves to suffer from various

Thermal effects in high average power optical parametric amplifiers.

Science.gov (United States)

Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

2013-03-01

Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

Science.gov (United States)

Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.;

Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom Keinicke

2013-01-01

-wave frequencies, a single-branch cascode based PA using single-finger devices and a two-way combined based PA using three-finger devices are fabricated. The single-branch design shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz and the two-way combined design shows a power...... gain of 9.5dB with a saturated output power of 18.6dBm at 72.6GHz....

NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

Science.gov (United States)

Benet, James

1994-01-01

This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

Design of Amplifier Circuit for the HT-7 Tokamak Thomson Scattering System

International Nuclear Information System (INIS)

Shi Lingwei; Ling Bili; Zhao Junyu; Yang Li; Zang Qing; Hu Qingsheng; Jia Yanqing

2008-01-01

Thomson scattering diagnostic is important for measuring electron temperature and density profiles. To improve the signal-to-noise ratio, a silicon avalanche photodiode (APD) with high quantum efficiency, high sensitivity, and high gain up to 100 was adopted to measure the Thomson scattering spectrum. A preamplifier, which has low noise, high bandwidth, and high sensitivity, was designed with suitable transimpedance. Using AD8367 as the post-amplifier, good performance of the APD readout electronics have been obtained. A discussion is presented on the performance of the amplifier using a laser diode to simulate the Thomson scattering light. The test results indicate that the designed circuit has a high amplifying factor and fast rising edge. So reduction of the integral gate of the CAMAC ADC converter can improve the signal-to-noise ratio. (brief communication and research note)

Multi-pass amplifier architecture for high power laser systems

Science.gov (United States)

Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

2014-04-01

A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

Updated design for a low-noise, wideband transimpedance photodiode amplifier

International Nuclear Information System (INIS)

Paul, S. F.; Marsala, R.

2006-01-01

The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

Improvement of out-of-band Behaviour in Switch-Mode Amplifiers and Power Supplies by their Modulation Topology

DEFF Research Database (Denmark)

Knott, Arnold

2010-01-01

Switch-mode power electronics is disturbing other electronic circuits by emission of electromagnetic waves and signals. To allow transmission of information, a set of regulatory rules (electromagnetic compatibility (EMC)) were created to limit this disturbance. To fulfill those rules in power...... electronics, shielding and filtering is required, which is limiting the size reduction. The motivation for this project was to find alternative ways to avoid trouble with interference of switch-mode power electronics and transmission and receiver circuits. An especial focus is given to audio power amplifiers....... After a historical overview and description of interaction between power electronics and electromagnetic compatibility (chapter 1), the thesis will first show the impact of the high frequency signals on the audio performance of switch-mode audio power amplifiers (chapter 2). Therefore the work of others...

Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

Science.gov (United States)

Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

2017-09-01

This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.

Design of an 1800nm Raman amplifier

DEFF Research Database (Denmark)

Svane, Ask Sebastian; Rottwitt, Karsten

2013-01-01

We present the experimental results for a Raman amplifier that operates at 1810 nm and is pumped by a Raman fiber laser at 1680 nm. Both the pump laser and the Raman amplifier is polarization maintaining. A challenge when scaling Raman amplifiers to longer wavelengths is the increase...... in transmission loss, but also the reduction in the Raman gain coefficient as the amplifier wavelength is increased. Both polarization components of the Raman gain is characterized, initially for linearly co-polarized signal and pump, subsequently linearly polarized orthogonal signal and pump. The noise...

Design of switched-capacitor filter circuits using low gain amplifiers

CERN Document Server

Serra, Hugo Alexandre de Andrade

2015-01-01

This book describes the design of switched-capacitor filter circuits using low gain amplifiers and demonstrates some techniques that can minimize the effects of parasitic capacitances during the design phase. Focus is given in the design of low-pass and band-pass SC filters, and how higher order filters can be achieved using cascaded biquadratic filter sections. The authors also describe a low voltage implementation of a low-pass SC filter.

A low-power wide range transimpedance amplifier for biochemical sensing.

Science.gov (United States)

Rodriguez-Villegas, Esther

2007-01-01

This paper presents a novel low voltage and low power transimpedance amplifier for amperometric potentiostats. The power is optimized by having three different gain settings for different current ranges, which can be programmed with a biasing current. The voltage ranges have been optimized by using FGMOS transistors in a second voltage amplification stage that simultaneously allow for offset calibration as well as independent biasing of the gates. The circuit operates with input currents from 1 pA to 1 microA, with a maximum power supply voltage of 1.5 V and consumes 82.5 nW, 9.825 microW, 47.325 microW for currents varying from (1 pA, 0.25 nA), (0.25 nA, 62.5 nA) and (62.5 nA, 1 microA) respectively.

High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

FLUIDIC AC AMPLIFIERS.

Science.gov (United States)

Several fluidic tuned AC Amplifiers were designed and tested. Interstage tuning and feedback designs are considered. Good results were obtained...corresponding Q’s as high as 12. Element designs and test results of one, two, and three stage amplifiers are presented. AC Modulated Carrier Systems

High power klystrons for efficient reliable high power amplifiers

Science.gov (United States)

Levin, M.

1980-11-01

This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

A Collaborative Project for the Development of Energy Amplifier

International Nuclear Information System (INIS)

Joo, H. K.; Kim, S. J.; Kim, Y. H.; Lee, Y. W.; Cho, C. H.; Song, T. Y.

2009-11-01

An energy amplifier can be an option for the future system for electricity generation and for management of spent fuel. An energy amplifier system is composed of a proton accelerator and a proton transportation system, a target system, a subcritical reactor, and a heat transfer system. A development plan for energy amplifier should be individually prepared for each sub-sytem. For the development of a subcritical reactor, a feasibility and conceptual studies is recommended to be carried out till the basic research phase which is performed with the development of the accelerator system. The feasibility study needs 1∼2 years of research period and 1.5 man-year of efforts. The conceptual design for the subcritical reactor will determine a reactor concept, the power of reactor and accelerator, the interface with a target system, fuel design, the performance and safety analysis of the core, and the fuel cycle option including thorium cycle, and it requires 2∼3 years of research period and 6 man-year of man power

A reflexing electron microwave amplifier for rf particle accelerator applications

International Nuclear Information System (INIS)

Fazio, M.V.; Hoeberling, R.F.

1988-01-01

The evolution of rf-accelerator technology toward high-power, high-current, low-emittance beams produces an ever-increasing demand for efficient, very high power microwave power sources. The present klystron technology has performed very well but is not expected to produce reliable gigawatt peak-power units in the 1- to 10-GHz regime. Further major advancements must involve other types of sources. The reflexing-electron class of sources can produce microwave powers at the gigawatt level and has demonstrated operation from 800-MHz to 40-GHz. The pulse length appears to be limited by diode closure, and reflexing-electron devices have been operated in a repetitively pulsed mode. A design is presented for a reflexing electron microwave amplifier that is frequency and phase locked. In this design, the generated microwave power can be efficiently coupled to one or several accelerator loads. Frequency and phase-locking capability may permit parallel-source operation for higher power. The low-frequency (500-MHz to 10-GHz) operation at very high power required by present and proposed microwave particle accelerators makes an amplifier, based on reflexing electron phenomena, a candidate for the development of new accelerator power sources. (author)

High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

Millimeter wave free electron laser amplifiers: Experiments and designs

International Nuclear Information System (INIS)

Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Bensen, D.M.; Destler, W.W.; Granatstein, V.L.; Lantham, P.E.; Levush, B.; Rodgers, J.

1991-01-01

Free electron laser amplifies are investigated as sources of high- average-power (1 MW) millimeter to submillimeter wave radiation (200 GHz - 600 GHz) for application to electron cyclotron resonance heating of magnetically confined fusion plasmas. As a stepping-stone to higher frequencies and cw operation a pulsed amplifier (τ pulse ≅ 80 ns) at 98 GHz is being developed. Status is reported on this experiment which investigates linear gain amplification with use of sheet electron beam (transverse cross section = 0.1 cm x 2.0 cm, V beam = 440 keV, I beam ≅ 10 A) and short-period wiggler (ell w = 0.96 cm) and with expected output of 140 W. Predictions of gain and efficiency from a 1-D universal formulation are presented. Beam propagation results, with wiggler focusing as a means of sheet beam confinement in both transverse dimensions, through the 54 cm (56 period) pulsed electromagnet wiggler are discussed. Peak wiggler fields of 5.1 kG on-axis have been achieved

Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

Study of the Powerful Nd:YLF Laser Amplifiers for the CTF3 Photoinjectors

CERN Document Server

Petrarca, M; Luchinin, G; Divall, M

2011-01-01

A high-power neodymium-doped yttrium lithium fluoride (Nd:YLF) mode-locked 1.5-GHz laser currently used to drive the two photoinjectors of the Compact Linear Collider Test Facility project at the European Organization for Nuclear Research is described. A phenomenological characterization of the two powerful Nd:YLF amplifiers is presented and compared with the measurements. The laser system operates in a saturated steady-state mode. This mode provides good shot-to-shot stability with pulse train mean power in the 10 kW range.

Challenges in higher order mode Raman amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

2015-01-01

A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

Portable Amplifier Design for a Novel EEG Monitor in Point-of-Care Applications.

Science.gov (United States)

Luan, Bo; Sun, Mingui; Jia, Wenyan

2012-01-01

The Electroencephalography (EEG) is a common diagnostic tool for neurological diseases and dysfunctions, such as epilepsy and insomnia. However, the current EEG technology cannot be utilized quickly and conveniently at the point of care due to the complex skin preparation procedures required and the inconvenient EEG data acquisition systems. This work presents a portable amplifier design that integrates a set of skin screw electrodes and a wireless data link. The battery-operated amplifier contains an instrumentation amplifier, two noninverting amplifiers, two high-pass filters, and a low-pass filter. It is able to magnify the EEG signals over 10,000 times and has a high impedance, low noise, small size and low weight. Our electrode and amplifier are ideal for point-of-care applications, especially during transportation of patients suffering from traumatic brain injury or stroke.

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

DEFF Research Database (Denmark)

Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

2013-01-01

This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

Time Difference Amplifier with Robust Gain Using Closed-Loop Control

Science.gov (United States)

Nakura, Toru; Mandai, Shingo; Ikeda, Makoto; Asada, Kunihiro

This paper presents a Time Difference Amplifier (TDA) that amplifies the input time difference into the output time difference. Cross coupled chains of variable delay cells with the same number of stages are applicable for TDA, and the gain is adjusted via the closed-loop control. The TDA was fabricated using 65nm CMOS and the measurement results show that the time difference gain is 4.78 at a nominal power supply while the designed gain is 4.0. The gain is stable enough to be less than 1.4% gain shift under ±10% power supply voltage fluctuation.

Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

KAUST Repository

Rao, Anlei

2012-09-08

It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available, the performance may degrade significantly, and as such robust power allocation schemes have been developed to minimize the effects of this degradation. In this paper, we investigate power allocation strategies for multicarrier systems, in which each subcarrier employs single amplify-and-forward (AF) relaying scheme. Optimal power allocation schemes are proposed by maximizing the approximated channel capacity under aggregate power constraint (APC) and separate power constraint (SPC). By comparison with the uniform power allocation scheme and the best channel power allocation scheme, we confirm that both the APC and SPC schemes achieve a performance gain over benchmark schemes. In addition, the impact of channel uncertainty is also considered in this paper by modeling the uncertainty regions as bounded sets, and results show that the uncertainty can degrade the worst-case performance significantly.

An amplifier for VUV photomultiplier operating in cryogenic environment

International Nuclear Information System (INIS)

Arneodo, F.; Benabderrahmane, M.L.; Dahal, S.; Di Giovanni, A.; D'Inzeo, M.; Franchi, G.; Pazos Clemens, L.

2016-01-01

We present the characterisation of an amplifier potentially interesting for noble liquid detectors. The design has been conceived considering the requirements of low power consumption (less than 30 mW), low noise, amplification factor of 10 at 100 MHz and use of commercial components. The amplifier has been integrated onto an electronic board with a voltage divider to operate an Hamamatsu R11410 photomultiplier tube (used in XENON1T, Aprile et al. (2014) [1] dark matter experiment).

An amplifier for VUV photomultiplier operating in cryogenic environment

Energy Technology Data Exchange (ETDEWEB)

Arneodo, F.; Benabderrahmane, M.L.; Dahal, S. [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates); Di Giovanni, A., E-mail: adriano.digiovanni@nyu.edu [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates); D' Inzeo, M.; Franchi, G. [Age Scientific srl – Capezzano Pianore (Italy); Pazos Clemens, L. [New York University Abu Dhabi, Abu Dhabi (United Arab Emirates)

2016-07-11

We present the characterisation of an amplifier potentially interesting for noble liquid detectors. The design has been conceived considering the requirements of low power consumption (less than 30 mW), low noise, amplification factor of 10 at 100 MHz and use of commercial components. The amplifier has been integrated onto an electronic board with a voltage divider to operate an Hamamatsu R11410 photomultiplier tube (used in XENON1T, Aprile et al. (2014) [1] dark matter experiment).

High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

Science.gov (United States)

Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

2017-10-01

With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

Science.gov (United States)

Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

2009-04-01

We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar; Alouini, Mohamed-Slim; Chen, Yunfei; Radaydeh, Redha M.

2012-01-01

In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized

A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

Science.gov (United States)

Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

2013-04-01

In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

KAUST Repository

Zafar, Ammar

2013-06-01

In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

Spectral Analysis of Polynomial Nonlinearity with Applications to RF Power Amplifiers

Directory of Open Access Journals (Sweden)

G. Tong Zhou

2004-09-01

Full Text Available The majority of the nonlinearity in a communication system is attributed to the power amplifier (PA present at the final stage of the transmitter chain. In this paper, we consider Gaussian distributed input signals (such as OFDM, and PAs that can be modeled by memoryless or memory polynomials. We derive closed-form expressions of the PA output power spectral density, for an arbitrary nonlinear order, based on the so-called Leonov-Shiryaev formula. We then apply these results to answer practical questions such as the contribution of AM/PM conversion to spectral regrowth and the relationship between memory effects and spectral asymmetry.

A Novel Ku-Band/Ka-Band and Ka-Band/E-Band Multimode Waveguide Couplers for Power Measurement of Traveling-Wave Tube Amplifier Harmonic Frequencies

Science.gov (United States)

Wintucky, Edwin G.; Simons, Rainee N.

2015-01-01

This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).

Linear Processing Design of Amplify-and-Forward Relays for Maximizing the System Throughput

Directory of Open Access Journals (Sweden)

Qiang Wang

2018-01-01

Full Text Available In this paper, firstly, we study the linear processing of amplify-and-forward (AF relays for the multiple relays multiple users scenario. We regard all relays as one special “relay”, and then the subcarrier pairing, relay selection and channel assignment can be seen as a linear processing of the special “relay”. Under fixed power allocation, the linear processing of AF relays can be regarded as a permutation matrix. Employing the partitioned matrix, we propose an optimal linear processing design for AF relays to find the optimal permutation matrix based on the sorting of the received SNR over the subcarriers from BS to relays and from relays to users, respectively. Then, we prove the optimality of the proposed linear processing scheme. Through the proposed linear processing scheme, we can obtain the optimal subcarrier paring, relay selection and channel assignment under given power allocation in polynomial time. Finally, we propose an iterative algorithm based on the proposed linear processing scheme and Lagrange dual domain method to jointly optimize the joint optimization problem involving the subcarrier paring, relay selection, channel assignment and power allocation. Simulation results illustrate that the proposed algorithm can achieve a perfect performance.

X-Parameter Based Modelling of Polar Modulated Power Amplifiers

DEFF Research Database (Denmark)

Wang, Yelin; Nielsen, Troels Studsgaard; Sira, Daniel

2013-01-01

X-parameters are developed as an extension of S-parameters capable of modelling non-linear devices driven by large signals. They are suitable for devices having only radio frequency (RF) and DC ports. In a polar power amplifier (PA), phase and envelope of the input modulated signal are applied...... at separate ports and the envelope port is neither an RF nor a DC port. As a result, X-parameters may fail to characterise the effect of the envelope port excitation and consequently the polar PA. This study introduces a solution to the problem for a commercial polar PA. In this solution, the RF-phase path...... PA for simulations. The simulated error vector magnitude (EVM) and adjacent channel power ratio (ACPR) were compared with the measured data to validate the model. The maximum differences between the simulated and measured EVM and ACPR are less than 2% point and 3 dB, respectively....

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

Science.gov (United States)

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

International Nuclear Information System (INIS)

Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

2013-01-01

A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

Design of low power and low area passive sigma delta modulators for audio applications

CERN Document Server

Fouto, David

2017-01-01

This book presents the study, design, modulation, optimization and implementation of low power, passive DT-ΣΔMs for use in audio applications. The high gain and bandwidth amplifier normally used for integration in ΣΔ modulation, is replaced by passive, switched-capacitor branches working under the Ultra Incomplete Settling (UIS) condition, leading to a reduction of the consumed power. The authors describe a design process that uses high level models and an optimization process based in genetic algorithms to achieve the desired performance.

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

Directory of Open Access Journals (Sweden)

F. Touati

2007-12-01

Full Text Available High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more- FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 μm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology fT of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

Science.gov (United States)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Transmission characteristics of acoustic amplifier in thermoacoustic engine

International Nuclear Information System (INIS)

Sun Daming; Qiu Limin; Wang Bo; Xiao Yong

2008-01-01

Thermoacoustic engines are promising in practical applications for the merits of simple configuration, reliable operation and environmentally friendly working gas. An acoustic amplifier can increase the output pressure amplitude of a thermoacoustic engine (TE) and improve the matching between the engine and its load. In order to make full use of an acoustic amplifier, the transmission characteristics are studied based on linear thermoacoustic theory. Computational and experimental results show that the amplifying ability of an acoustic amplifier is mainly determined by its geometry parameters and output resistance impedance. The amplifying ability of an acoustic amplifier with appropriate length and diameter reaches its maximum when the output resistance impedance is infinite. It is also shown that the acoustic amplifier consumes an amount of acoustic power when amplifying pressure amplitude and the acoustic power consumption increases with amplifying ratio. Furthermore, a novel cascade acoustic amplifier is proposed, which has a much stronger amplifying ability with reduced acoustic power consumption. In experiments, a two-stage cascade acoustic amplifier amplifies the pressure ratio from 1.177 to 1.62 and produces a pressure amplitude of 0.547 MPa with nitrogen of 2.20 MPa as working gas. Good agreements are obtained between the theoretical analysis and experimental results. This research is instructive for comprehensively understanding the mechanism and making full use of the acoustic amplifier

Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

Directory of Open Access Journals (Sweden)

Ler Chun Lee

2008-01-01

Full Text Available A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA. A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

Low-noise detector and amplifier design for 100 ns direct detection CO{sub 2} LIDAR receiver

Energy Technology Data Exchange (ETDEWEB)

Cafferty, M.M.; Cooke, B.J.; Laubscher, B.E.; Olivas, N.L.; Fuller, K.

1997-06-01

The development and test results of a prototype detector/amplifier design for a background limited, pulsed 100 ns, 10--100 kHz repetition rate LIDAR/DIAL receiver system are presented. Design objectives include near-matched filter detection of received pulse amplitude and round trip time-of-flight, and the elimination of excess correlated detector/amplifier noise for optimal pulse averaging. A novel pole-zero cancellation amplifier, coupled with a state-of-the-art SBRC (Santa Barbara Research Center) infrared detector was implemented to meet design objectives. The pole-zero cancellation amplifier utilizes a tunable, pseudo-matched filter technique to match the width of the laser pulse to the shaping time of the filter for optimal SNR performance. Low frequency correlated noise, (l/f and drift noise) is rejected through a second order high gain feedback loop. The amplifier also employs an active detector bias stage minimizing detector drift. Experimental results will be provided that demonstrate near-background limited, 100 ns pulse detection performance given a 8.5--11.5 {micro}m (300 K B.B.) radiant background, with the total noise floor spectrally white for optimal pulse averaging efficiency.

A low power and low distortion rail-to-rail input/output amplifier using constant current technique

International Nuclear Information System (INIS)

Liu Yan; Zhao Yiqiang; Zhang Shilin; Zhao Hongliang

2011-01-01

A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 x 183 μm 2 . Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz. (semiconductor integrated circuits)

Efficiency Enhancement of an Envelope Tracking Power Amplifier Combining Supply Shaping and Dynamic Biasing

DEFF Research Database (Denmark)

Tafuri, Felice Francesco; Sira, Daniel; Jensen, Ole Kiel

2013-01-01

This paper presents a new method to improve the performance of envelope tracking (ET) power amplifiers (PAs). The method consists of combining the supply modulation that characterizes the envelope tracking architecture with supply shaping and dynamic biasing. The inclusion of dynamic biasing allo...

Erbium/ytterbium co-doped double clad fiber amplifier, its applications and effects in fiber optic communication systems

Science.gov (United States)

Dua, Puneit

Increased demand for larger bandwidth and longer inter-amplifiers distances translates to higher power budgets for fiber optic communication systems in order to overcome large splitting losses and achieve acceptable signal-to-noise ratios. Due to their unique design ytterbium sensitized erbium doped, double clad fiber amplifiers; offer significant increase in the output powers that can be obtained. In this thesis we investigate, a one-stage, high power erbium and ytterbium co-doped double clad fiber amplifier (DCFA) with output power of 1.4W, designed and built in our lab. Experimental demonstration and numerical simulation techniques have been used to systematically study the applications of such an amplifier and the effects of incorporating it in various fiber optic communication systems. Amplitude modulated subcarrier multiplexed (AM-SCM) CATV distribution experiment has been performed to verify the feasibility of using this amplifier in an analog/digital communication system. The applications of the amplifier as a Fabry-Perot and ring fiber laser with an all-fiber cavity, a broadband supercontinuum source and for generation of high power, short pulses at 5GHz have been experimentally demonstrated. A variety of observable nonlinear effects occur due to the high intensity of the optical powers confined in micron-sized cores of the fibers, this thesis explores in detail some of these effects caused by using the high power Er/Yb double clad fiber amplifier. A fiber optic based analog/digital CATV system experiences composite second order (CSO) distortion due to the interaction between the gain tilt---the variation of gain with wavelength, of the doped fiber amplifier and the wavelength chirp of the directly modulated semiconductor laser. Gain tilt of the Er/Yb co-doped fiber amplifier has been experimentally measured and its contribution to the CSO of the system calculated. Theoretical analysis of a wavelength division multiplexed system with closely spaced

Portable musical instrument amplifier

Science.gov (United States)

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

Design of 1 MHz solid state high frequency power supply

International Nuclear Information System (INIS)

Parmar, Darshan Kumar; Singh, N.P.; Gajjar, Sandip

2015-01-01

A High Voltage High Frequency (HVHF) Power supply is used for various applications, like AM Transmitters, metallurgical applications, Wireless Power Transfer, RF Ion Sources, etc. The Ion Source for a Neutral beam Injector at ITER-India uses inductively coupled power source at High Frequency (∼ 1 MHz). Switching converter based topology used to generate 1 MHz sinusoidal output is expected to have advantages on efficiency and reliability as compared to traditional RF Tetrode tubes based oscillators. In terms of Power Electronics, thermal and power coupling issues are major challenges at such a high frequency. A conceptual design for a 200 kW, 1 MHz power supply and a prototype design for a 600W source been done. The prototype design is attempted with Class-E amplifier topology where a MOSFET is switched resonantly. The prototype uses two low power modules and a ferrite combiner to add the voltage and power at the output. Subsequently solution with class-D H-Bridge configuration have been evaluated through simulation where module design is stable as switching device do not participate in resonance, further switching device voltage rating is substantially reduced. The rating of the modules is essentially driven by the maximum power handling capacity of the MOSFETs and ferrites in the combiner circuit. The output passive network including resonance tuned network and impedance matching network caters for soft switching and matches the load impedance to 50 ohm respectively. This paper describes the conceptual design of a 200 kW power supply and experimental results of the prototype 600 W, 1 MHz source. (author)

Design of 1 MHz Solid State High Frequency Power Supply

Science.gov (United States)

Parmar, Darshan; Singh, N. P.; Gajjar, Sandip; Thakar, Aruna; Patel, Amit; Raval, Bhavin; Dhola, Hitesh; Dave, Rasesh; Upadhay, Dishang; Gupta, Vikrant; Goswami, Niranjan; Mehta, Kush; Baruah, Ujjwal

2017-04-01

High Frequency Power supply (HFPS) is used for various applications like AM Transmitters, metallurgical applications, Wireless Power Transfer, RF Ion Sources etc. The Ion Source for a Neutral beam Injector at ITER-India uses inductively coupled power source at High Frequency (∼1 MHz). Switching converter based topology used to generate 1 MHz sinusoidal output is expected to have advantages on efficiency and reliability as compared to traditional RF Tetrode tubes based oscillators. In terms of Power Electronics, thermal and power coupling issues are major challenges at such a high frequency. A conceptual design for a 200 kW, 1 MHz power supply and a prototype design for a 600 W source been done. The prototype design is attempted with Class-E amplifier topology where a MOSFET is switched resonantly. The prototype uses two low power modules and a ferrite combiner to add the voltage and power at the output. Subsequently solution with Class-D H-Bridge configuration have been evaluated through simulation where module design is stable as switching device do not participate in resonance, further switching device voltage rating is substantially reduced. The rating of the modules is essentially driven by the maximum power handling capacity of the MOSFETs and ferrites in the combiner circuit. The output passive network including resonance tuned network and impedance matching network caters for soft switching and matches the load impedance to 50ohm respectively. This paper describes the conceptual design of a 200 kW high frequency power supply and experimental results of the prototype 600 W, 1 MHz source.

Semi-custom integrated circuit amplifier and level discriminator for nuclear and space instruments

International Nuclear Information System (INIS)

Hahn, S.F.; Cafferty, M.M.

1991-01-01

This paper reports on the development an extra fast current feedback amplifier and a level discriminator employing a dielectrically-isolated bipolar, semi-custom Application Specific Integrated Circuit (ASIC) process. These devices are specifically designed for instruments aboard spacecrafts or in portable packages requiring low power and weight. The amplifier adopts current feedback for a unity-gain bandwidth of 90 MHz while consuming 50 mW. The level discriminator uses a complementary output driver for balanced positive and negative response times. The power consumption of these devices can be programmed by external resistors for optimal speed and power trade-off

Semi-custom integrated circuit amplifier and level discriminator for nuclear and space instruments

International Nuclear Information System (INIS)

Hahn, S.F.; Cafferty, M.M.

1990-01-01

This paper reports an extra fast current feedback amplifier and a level discriminator developed employing a dielectrically isolated bipolar, semi-custom Application Specific Integrated Circuit (ASIC) process. These devices are specifically designed for instruments aboard spacecrafts or in portable packages requiring low power and weight. The amplifier adopts current feedback for a unity- gain bandwidth of 90 MHz while consuming 50 mW. The level discriminator uses a complementary output driver for balanced positive and negative response times. The power consumption of these devices can be programmed by external resistors for optimal speed and power trade-off

Single conversion stage amplifier - SICAM

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.

2005-12-15

This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

Design and analysis of high current DC power supply for vacuum arc melting furnace

International Nuclear Information System (INIS)

Adhikary, Santu; Sharma, Vishnu Kumar; Sharma, Archana

2015-01-01

Vacuum Arc furnace (VAR), is used for melting of ingot in many industrial units. Till now in many industries the existing power supply for VAR is based on magnetic amplifier, which is a lossy component. Thus an efficient topology is needed to develop as a suitable alternative for the existing power supply. Basically Arc in electrical furnace is an unstable phenomena, it has drooping characteristic in nature so to stabilize the arc we need a power supply across the load (arc), which is more drooping in nature than arc characteristics. So this paper highlights the stability and response analysis of several alternative topologies and Stabilization of arc using the feedback and firing angle control in MATLAB. The work also covers comparison among those topologies to choose the optimized topology as a suitable alternative of the existing magnetic amplifier based power supply and the detail design of the proposed topology with a tested trail circuit in PROTEUS. (author)

Precision Instrumentation Amplifiers and Read-Out Integrated Circuits

CERN Document Server

Wu, Rong; Makinwa, Kofi A A

2013-01-01

This book presents innovative solutions in the design of precision instrumentation amplifier and read-out ICs, which can be used to boost millivolt-level signals transmitted by modern sensors, to levels compatible with the input ranges of typical Analog-to-Digital Converters (ADCs).  The discussion includes the theory, design and realization of interface electronics for bridge transducers and thermocouples. It describes the use of power efficient techniques to mitigate low frequency errors, resulting in interface electronics with high accuracy, low noise and low drift. Since this book is mainly about techniques for eliminating low frequency errors, it describes the nature of these errors and the associated dynamic offset cancellation techniques used to mitigate them.  Surveys comprehensively offset cancellation and accuracy improvement techniques applied in precision amplifier designs; Presents techniques in precision circuit design to mitigate low frequency errors in millivolt-level signals transmitted by ...

Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

International Nuclear Information System (INIS)

Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

2014-01-01

Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

Cathode-follower power amplifier

International Nuclear Information System (INIS)

Giordano, S.; Puglisi, M.

1983-01-01

In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

Circuit design and simulation of a HV-supply controlling the power of 140 GHz 1 MW gyrotrons for ECRH on W7-X

International Nuclear Information System (INIS)

Brand, P.; Mueller, G.A.

2003-01-01

For plasma heating by ECR in the Stellarator W7-X under construction, 140 GHz gyrotrons with 1 MW cw output power are under development. These tubes have a voltage depressed collector for electron energy recovery. Each gyrotron is fed by two high-voltage sources: a high-power supply for driving the electron beam and a precision low-power supply for beam acceleration. In addition, a protection system with a thyratron crowbar for fast power removal in case of gyrotron arcing is installed. The low-power high-voltage source for beam acceleration is realized by a high-voltage servo-amplifier driving the depression voltage such that the influence of the voltage noise of the main high-power supply on the acceleration voltage is suppressed by feed-back control of the amplifier. Design and simulation of the servo-amplifier by PSpice is presented

47 CFR 97.315 - Certification of external RF power amplifiers.

Science.gov (United States)

2010-10-01

.... (2) The amplifier was manufactured before April 28, 1978, and has been issued a marketing waiver by... that operator's station. (3) The amplifier is sold to an amateur radio operator or to a dealer, the amplifier is purchased in used condition by a dealer, or the amplifier is sold to an amateur radio operator...

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

Operational amplifier circuits analysis and design

CERN Document Server

Nelson, J C C

1995-01-01

This book, a revised and updated version of the author's Basic Operational Amplifiers (Butterworths 1986), enables the non-specialist to make effective use of readily available integrated circuit operational amplifiers for a range of applications, including instrumentation, signal generation and processing.It is assumed the reader has a background in the basic techniques of circuit analysis, particularly the use of j notation for reactive circuits, with a corresponding level of mathematical ability. The underlying theory is explained with sufficient but not excessive, detail. A range of compu

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Directory of Open Access Journals (Sweden)

Pierre-Marie Mans

2010-01-01

Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

Class D audio amplifiers for high voltage capacitive transducers

DEFF Research Database (Denmark)

Nielsen, Dennis

of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice......Audio reproduction systems contains two key components, the amplifier and the loudspeaker. In the last 20 – 30 years the technology of audio amplifiers have performed a fundamental shift of paradigm. Class D audio amplifiers have replaced the linear amplifiers, suffering from the well-known issues...... with the low level of acoustical output power and complex amplifier requirements, have limited the commercial success of the technology. Horn or compression drivers are typically favoured, when high acoustic output power is required, this is however at the expense of significant distortion combined...

Design of an amplifier model accounting for thermal effect in fully aperiodic large pitch fibers

Science.gov (United States)

Tragni, K.; Molardi, C.; Poli, F.; Dauliat, R.; Leconte, B.; Darwich, D.; du Jeu, R.; Malleville, M. A.; Jamier, R.; Selleri, S.; Roy, P.; Cucinotta, A.

2018-02-01

Yb-doped Photonic Crystal Fibers (PCFs) have triggered a significant power scaling into fiber-based lasers. However thermally-induced effects, like mode instability, can compromise the output beam quality. PCF design with improved Higher Order Mode (HOM) delocalization and effective thermal resilience can contain the problem. In particular, Fully- Aperiodic Large-Pitch Fibers (FA-LPFs) have shown interesting properties in terms of resilience to thermal effects. In this paper the performances of a Yb-doped FA-LPF amplifier are experimentally and numerically investigated. Modal properties and gain competition between Fundamental Mode (FM) and first HOM have been calculated, in presence of thermal effects. The main doped fiber characteristics have been derived by comparison between experimental and numerical results.

Numerical simulation of cross field amplifiers

International Nuclear Information System (INIS)

Eppley, K.

1990-01-01

Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. One feature distinguishing cross field amplifiers is that the operating current is produced by secondary emission from a cold cathode. This removes the need for a heater and enables the device to act as a switch tube, drawing no power until the rf drive is applied. However, this method of generating the current does complicate the simulation. We are developing a simulation model of cross field amplifiers using the PIC code CONDOR. We simulate an interaction region, one traveling wavelength long, with periodic boundary conditions. An electric field with the appropriate phase velocity is imposed on the upper boundary of the problem. Evaluation of the integral of E·J gives the power interchanged between the wave and the beam. Given the impedance of the structure, we then calculate the change in the traveling wave field. Thus we simulate the growth of the wave through the device. The main advance of our model over previous CFA simulations is the realistic tracking of absorption and secondary emission. The code uses experimental curves to calculate secondary production as a function of absorbed energy, with a theoretical expression for the angular dependence. We have used this code to model the 100 MW X-band CFA under construction at SLAC, as designed by Joseph Feinstein and Terry Lee. We are examining several questions of practical interest, such as the power and spectrum of absorbed electrons, the minimum traveling wave field needed to initiate spoke formation, and the variation of output power with dc voltage, anode-cathode gap, and magnetic field. 5 refs., 8 figs

Assembly and maintenance of full scale NIF amplifiers in the amplifier module prototype laboratory (AMPLAB)

International Nuclear Information System (INIS)

Horvath, J. A.

1998-01-01

Mechanical assembly and maintenance of the prototype National Ignition Facility amplifiers in the Amplifier Module Prototype Laboratory (AMPLAB) at Lawrence Livermore National Laboratory requires specialized equipment designed to manipulate large and delicate amplifier components in a safe and clean manner. Observations made during the operation of this assembly and maintenance equipment in AMPLAB provide design guidance for similar tools being built for the National Ignition Facility. Fixtures used for amplifier frame installation, laser slab and flashlamp cassette assembly, transport, and installation, and in-situ blastshield exchange are presented. Examples include a vacuum slab gripper, slab handling clean crane, slab cassette assembly fixture, sealed transport vehicle for slab cassette movement between the cleanroom and amplifier, slab cassette transfer fixture between the cleanroom and transport vehicle, and equipment needed for frame assembly unit, blastshield, an d flashlamp cassette installation and removal. The use of these tools for amplifier assembly, system reconfiguration, reflector replacement, and recovery from an abnormal occurrence such as a flashlamp explosion is described. Observations are made on the design and operation of these tools and their contribution to the final design

High efficiency fourth-harmonic generation from nanosecond fiber master oscillator power amplifier

Science.gov (United States)

Mu, Xiaodong; Steinvurzel, Paul; Rose, Todd S.; Lotshaw, William T.; Beck, Steven M.; Clemmons, James H.