Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

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Hyeona Mun

2015-03-01

Full Text Available The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb and dopants (Fe. An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

Energy Technology Data Exchange (ETDEWEB)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

Thermoelectric properties of n-type Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} fabricated by mechanical alloying and hot pressing

Energy Technology Data Exchange (ETDEWEB)

Kim, H J; Choi, J S; Oh, T S; Hyun, D B

1997-07-01

Thermoelectric properties of polycrystalline Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} (0.05 {le} x {le} 0.25), fabricated by mechanical alloying and hot pressing, have been investigated. Formation of n-type Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} alloy powders was completed by mechanical alloying for 3 hours at ball-to-material ratio of 5:1, and processing time for Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} formation increased with Bi{sub 2}Se{sub 3} content x. Figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}) was markedly increased by hot pressing at temperatures above 450 C, and maximum value of 1.9 x 10{sup {minus}3}/K was obtained by hot pressing at 550 C. With addition of 0.015 wt% Bi as acceptor dopant, figure-of-merit of Bi{sub 2}(Te{sub 0.9}Se{sub 0.1}){sub 3} was hot pressed at 550 C, could be improved to 2.1 x 10{sup {minus}3}/K. When Bi{sub 2}(Te{sub 1{minus}x}Se{sub x}){sub 3} was hot pressed at 550 C, figure-of-merit increased from 1.14 x 10{sup {minus}3}/K to 1.92 x 10{sup {minus}3}/K with increasing Bi{sub 2}Se{sub 3} content x from 0.05 to 0.15, and then decreased to 1.30 x 10{sup {minus}3}/K for x = 0.25 composition.

Dispersion interactions between neighboring Bi atoms in (BiH3 )2 and Te(BiR2 )2.

Science.gov (United States)

Haack, Rebekka; Schulz, Stephan; Jansen, Georg

2018-03-13

Triggered by the observation of a short Bi⋯Bi distance and a BiTeBi bond angle of only 86.6° in the crystal structure of bis(diethylbismuthanyl)tellurane quantum chemical computations on interactions between neighboring Bi atoms in Te(BiR 2 ) 2 molecules (R = H, Me, Et) and in (BiH 3 ) 2 were undertaken. Bi⋯Bi distances atoms were found to significantly shorten upon inclusion of the d shells of the heavy metal atoms into the electron correlation treatment, and it was confirmed that interaction energies from spin component-scaled second-order Møller-Plesset theory (SCS-MP2) agree well with coupled-cluster singles and doubles theory including perturbative triples (CCSD(T)). Density functional theory-based symmetry-adapted perturbation theory (DFT-SAPT) was used to study the anisotropy of the interplay of dispersion attraction and steric repulsion between the Bi atoms. Finally, geometries and relative stabilities of syn-syn and syn-anti conformers of Te(BiR 2 ) 2 (R = H, Me, Et) and interconversion barriers between them were computed. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3)

Science.gov (United States)

Meng, Chang-Yu; Wei, Ming-Fang; Geng, Lei; Hu, Pei-Qing; Yu, Meng-Xia; Cheng, Wen-Dan

2016-07-01

Two new bismuth(III) selenite/tellurite nitrates, [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV-vis-NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi3O2)(SeO3)2](NO3) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P21/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi3O2)(SeO3)2](NO3) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetric building units, exhibit two different types of structures. The structure of [(Bi3O2)(SeO3)2](NO3) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi3O2)(SeO3)2] 3∞ with NO3- anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO3)](NO3) features 2D bismuth(III) tellurite [Bi(TeO3)2]2∞ layers separated by NO3- anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors.

The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

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Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

2016-02-01

We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

Fabrication Process and Thermoelectric Properties of CNT/Bi2(Se,Te3 Composites

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Kyung Tae Kim

2015-01-01

Full Text Available Carbon nanotube/bismuth-selenium-tellurium composites were fabricated by consolidating CNT/Bi2(Se,Te3 composite powders prepared from a polyol-reduction process. The synthesized composite powders exhibit CNTs homogeneously dispersed among Bi2(Se,Te3 matrix nanopowders of 300 nm in size. The powders were densified into a CNT/Bi2(Se,Te3 composite in which CNTs were randomly dispersed in the matrix through spark plasma sintering process. The effect of an addition of Se on the dimensionless figure-of-merit (ZT of the composite was clearly shown in 3 vol.% CNT/Bi2(Se,Te3 composite as compared to CNT/Bi2Te3 composite throughout the temperature range of 298 to 473 K. These results imply that matrix modifications such as an addition of Se as well as the incorporation of CNTs into bismuth telluride thermoelectric materials is a promising means of achieving synergistic enhancement of the thermoelectric performance levels of these materials.

Protective capping of topological surface states of intrinsically insulating Bi2Te3

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Katharina Hoefer

2015-09-01

Full Text Available We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology.

Effects of current stressing on the p-Bi2Te3/Sn interfacial reactions

International Nuclear Information System (INIS)

Chan, Hsing-Ting; Lin, Chih-Fan; Yen, Yee-Wen; Chen, Chih-Ming

2016-01-01

The Sn/p-Bi 2 Te 3 /Sn sandwich-type sample was current stressed with a density of 150 A/cm 2 to investigate the effects of current stressing on the p-Bi 2 Te 3 /Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi 2 Te 3 (50 °C) and cathodic p-Bi 2 Te 3 /Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi 2 Te 3 /Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10 −9 cm 2 s −1 at 120 °C. - Highlights: • Sn/p-Bi 2 Te 3 /Sn sandwich-type sample is current stressed with a density of 150 A/cm 2 . • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in Sb2Te3/Bi2Te3 heterojunctions

Science.gov (United States)

Aramberri, H.; Muñoz, M. C.

2017-05-01

We investigate the effects of strain on the topological order of the Bi2Se3 family of topological insulators by ab initio first-principles methods. Strain can induce a topological phase transition and we present the phase diagram for the 3D topological insulators, Bi2Te3 , Sb2Te3 , Bi2Se3 , and Sb2Se3 , under combined uniaxial and biaxial strain. Their phase diagram is universal and shows metallic and insulating phases, both topologically trivial and nontrivial. In particular, uniaxial tension can drive the four compounds into a topologically trivial insulating phase. We propose a Sb2Te3/Bi2Te3 heterojunction in which a strain-induced topological interface state arises in the common gap of this normal insulator-topological insulator heterojunction. Unexpectedly, the interface state is confined in the topologically trivial subsystem and is physically protected from ambient impurities. It can be switched on or off by means of uniaxial strain and therefore Sb2Te3 /Bi2Te3 heterojunctions provide a topological system which hosts tunable robust helical interface states with promising spintronic applications.

Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential

KAUST Repository

Kong, Desheng

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.

Effect of antimony concentration on structural and transport properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} mixed crystal

Energy Technology Data Exchange (ETDEWEB)

Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, S.; Banerjee, Aritra, E-mail: aritrabanerjee.cu@gmail.com [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata-700009 (India)

2015-06-24

Polycrystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} (0.60≤x≤0.68) alloys have been synthesized by solid state reaction method. Structural characterizations have been done using X-Ray Diffraction (XRD). Lattice parameter decreases with antimony (Sb) concentration. Sb doping leads to the modification in band structure and Fermi surface geometry. Band gap calculated from thermal variation of resistivity (ρ-T) data, decreases with Sb concentration. Sb concentration dependent power factor near room temperature have been calculated from obtained resistivity and thermopower data. Highest power factor obtained for (Bi{sub 0.40}Sb{sub 0.60}){sub 2}Te{sub 3} alloy.

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated via Quasi-Particle-Interference Mapping.

Science.gov (United States)

Schouteden, Koen; Govaerts, Kirsten; Debehets, Jolien; Thupakula, Umamahesh; Chen, Taishi; Li, Zhe; Netsou, Asteriona; Song, Fengqi; Lamoen, Dirk; Van Haesendonck, Chris; Partoens, Bart; Park, Kyungwha

2016-09-27

Topological insulators (TIs) are renowned for their exotic topological surface states (TSSs) that reside in the top atomic layers, and hence, detailed knowledge of the surface top atomic layers is of utmost importance. Here we present the remarkable morphology changes of Bi2Te3 surfaces, which have been freshly cleaved in air, upon subsequent systematic annealing in ultrahigh vacuum and the resulting effects on the local and area-averaging electronic properties of the surface states, which are investigated by combining scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and Auger electron spectroscopy (AES) experiments with density functional theory (DFT) calculations. Our findings demonstrate that the annealing induces the formation of a Bi bilayer atop the Bi2Te3 surface. The adlayer results in n-type doping, and the atomic defects act as scattering centers of the TSS electrons. We also investigated the annealing-induced Bi bilayer surface on Bi2Te3 via voltage-dependent quasi-particle-interference (QPI) mapping of the surface local density of states and via comparison with the calculated constant-energy contours and QPI patterns. We observed closed hexagonal patterns in the Fourier transform of real-space QPI maps with secondary outer spikes. DFT calculations attribute these complex QPI patterns to the appearance of a "second" cone due to the surface charge transfer between the Bi bilayer and the Bi2Te3. Annealing in ultrahigh vacuum offers a facile route for tuning of the topological properties and may yield similar results for other topological materials.

Process controls for Bi2Te3-Sb2Te3 prepared by mechanical alloying and hot pressing

International Nuclear Information System (INIS)

Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

2014-01-01

p-Type Bi 2 Te 3 -Sb 2 Te 3 solid solutions were prepared by mechanical alloying (MA) and hot pressing (HP) under different process conditions, after which the transport and the thermoelectric properties were evaluated. The relative densities of all hot-pressed specimens were over 98%, and the microstructure and crystal orientation were independent of the HP direction. All specimens exhibited p-type conduction, and the electrical resistivity was observed to increase slightly with increasing temperature, indicating a degenerate semiconductor behavior. The carrier concentration decreased with increasing HP temperature while the mobility increased. The maximum figure of merit obtained was 0.86 at 323 K for Bi 0.5 Sb 1.5 Te 3 hot-pressed at 648 K.

Study of the tellurite-rich composition range in the Bi2O3-TeO2 system

International Nuclear Information System (INIS)

Ghazaryan, A.A.

2015-01-01

The TeO 2 and Bi 2 O 3 based glasses and glass ceramics are widely used for various technical needs. However, information about the phase diagram of the Bi 2 O 3 -TeO 2 system is limited, and the existing data are inconsistent. According to Demina L.A. with co-authors the Bi 2 Te 4 O 1 1 compound has a congruent melting at 662°C and forms two eutectics with neighbors. In another case, according to the Schmidt P. with co-authors, it melts incongruently at 645°C without indication of Liquidus temperature. It was the motivation for the Bi 2 Te 4 O 1 1 melting behavior investigation and the binary Bi 2 O 3 -TeO 2 system phase diagram correction in the TeO 2 rich area of compositions. As initial materials the glass and solid state sintered samples were used for these purposes. The differential thermal and X-ray analyses were used for glassy and crystallized products identification. The exothermic effect with maximum at 420°C and two endothermal effects with minimum at 635°C and 720 Degree C are clearly observed on the DTA curve of the 80 TeO 2 -20 Bi 2 O 3 (mol.percent) glass composition corresponding to the Bi 2 Te 4 O 1 1 compound. The product of Bi 2 Te 4 O 1 1 glass powder crystallization at 420°C is the Bi 2 Te 4 O 1 1 compound with melting point of 635 ± 5°C. The second endothermic effect on the DTA curve in the range of temperature 680-765°C with minimum at 720°C, is associated with dissolution of TeO 2 in the melt, formed as result of the Bi 2 Te 4 O 1 1 incongruent melting. The existence of eutectic E 1 (87 mol.percent TeO 2 ) between Bi 2 Te 4 O 1 1 and TeO 2 with a melting point of 580 ±5°C has been confirmed. Incongruent melting promotes the peritectic P 1 (81 mol.percent TeO 2 ) formation between Bi 2 Te 4 O 1 1 and eutectic E 1 (87 mol.percent TeO 2 ) with a melting point of 635±5°C. Three endothermic effects at 560 °C, 635 °C and 720°C have been observed on the DTA curve of Bi 2 Te 4 O 1 1 compound, obtained by solid state synthesis. Last

Thermoelectric properties of quaternary (Bi,Sb)2(Te,Se)3 compound

International Nuclear Information System (INIS)

Lu, Pengfei; Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia; Wang, Shumin

2014-01-01

Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb) 2 (Te,Se) 3 compound. -- Abstract: The quaternary (Bi,Sb) 2 (Te,Se) 3 compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data

Formation of Dense Pore Structure by Te Addition in Bi0.5Sb1.5Te3: An Approach to Minimize Lattice Thermal Conductivity

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Syed Waqar Hasan

2013-01-01

Full Text Available We herein report the electronic and thermal transport properties of p-type Bi0.5Sb1.5Te3 polycrystalline bulks with dense pore structure. Dense pore structure was fabricated by vaporization of residual Te during the pressureless annealing of spark plasma sintered bulks of Te coated Bi0.5Sb1.5Te3 powders. The lattice thermal conductivity was effectively reduced to the value of 0.35 W m−1 K−1 at 300 K mainly due to the phonon scattering by pores, while the power factor was not significantly affected. An enhanced ZT of 1.24 at 300 K was obtained in spark plasma sintered and annealed bulks of 3 wt.% Te coated Bi0.5Sb1.5Te3 by these synergetic effects.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

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Du, Zengyi

2018-01-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

Thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions prepared by attrition milling and hot pressing

International Nuclear Information System (INIS)

Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

2014-01-01

Bi 2 Te 3-y Se y (y = 0.15 - 0.6) solid solutions were prepared by attrition milling and hot pressing. The lattice constants decreased with increasing Se content, indicating that the Se atoms were successfully substituted into the Te sites. All specimens exhibited n-type conduction, and their electrical resistivities increased slightly with increasing temperature. With increasing Se content, the Seebeck coefficients increased while the thermal conductivity decreased due to the increase in phonon scattering. The maximum figure of merit obtained was 0.63 at 440 K for the undoped Bi 2 Te 2.4 Se 0.6 solid solution.

Quantitative EDX microanalysis of Bi2Te3 in the TEM

International Nuclear Information System (INIS)

Peranio, N.; Eibl, O.

2007-01-01

Quantitative chemical analysis by energy dispersive X-ray spectrometry (EDX) in a transmission electron microscope (TEM) Zeiss912 and ohm; was applied to p-type (Bi,Sb) 2 Te 3 and n-type Bi 2 (Te,Se) 3 thermoelectric materials. Preliminary results yielded artifacts due to Bi spurious X-rays and hole-counts significantly beyond zero. A stray aperture was inserted in the TEM to absorb the stray radiation. With this aperture inserted a high-accuracy quantitative chemical analysis was established. The hole-counts decreased by a factor of 5 and the scatter of data decreased by a factor of 4 with respect to no aperture inserted. The mole fractions of Te and Se were 54.4 at% and 5.5 at% and varied by 0.5 at% for n-type material. A similar behaviour was found for Sb and Bi in p-type material. The variation in stoichiometry is smaller on the sub-micrometer scale and increases with increasing length scale for both, n-type and p-type Bi 2 Te 3 . Measurements in the TEM confirmed the inhomogeneous chemical composition found by wavelength dispersive X-ray spectrometry. The improved accuracy of the quantitative EDX analysis is also important for other compounds with unique physical properties. This was demonstrated on thin foils containing heavy elements and on powders of light elements dispersed on Cu-grids, i.e., the high-T C superconductor Bi 2 Sr 2 CaCu 2 O 8 and the mineral salt hydroxyapatite Ca 10 (PO 4 ) 6 OH 2 . (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bulk band structure of Bi2Te3

DEFF Research Database (Denmark)

Michiardi, Matteo; Aguilera, Irene; Bianchi, Marco

2014-01-01

-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of Bi2Te3 when compared to LDA. Experimental and calculated results are compared in the spectral regions where...

Effects of Lu and Tm Doping on Thermoelectric Properties of Bi2Te3 Compound

Science.gov (United States)

Yaprintsev, Maxim; Lyubushkin, Roman; Soklakova, Oxana; Ivanov, Oleg

2018-02-01

The Bi2Te3, Bi1.9Lu0.1Te3 and Bi1.9Tm0.1Te3 thermoelectrics of n-type conductivity have been prepared by the microwave-solvothermal method and spark plasma sintering. These compounds behave as degenerate semiconductors from room temperature up to temperature T d ≈ 470 K. Within this temperature range the temperature behavior of the specific electrical resistivity is due to the temperature changes of electron mobility determined by acoustic and optical phonon scattering. Above T d, an onset of intrinsic conductivity takes place when electrons and holes are present. At the Lu and Tm doping, the Seebeck coefficient increases, while the specific electrical resistivity and total thermal conductivity decrease within the temperature 290-630 K range. The increase of the electrical resistivity is related to the increase of electron concentration since the Tm and Lu atoms are donor centres in the Bi2Te3 lattice. The increase of the density-of-state effective mass for conduction band can be responsible for the increase of the Seebeck coefficient. The decrease of the total thermal conductivity in doped Bi2Te3 is attributed to point defects like the antisite defects and Lu or Tm atoms substituting for the Bi sites. In addition, reducing the electron thermal conductivity due to forming a narrow impurity (Lu or Tm) band having high and sharp density-of-states near the Fermi level can effectively decrease the total thermal conductivity. The thermoelectric figure-of-merit is enhanced from ˜ 0.4 for undoped Bi2Te3 up to ˜ 0.7 for Bi1.9Tm0.1Te3 and ˜ 0.9 for Bi1.9Lu0.1Te3.

Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

International Nuclear Information System (INIS)

Gandhi, T.; Raja, K.S.; Misra, M.

2009-01-01

Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO 2 template in a propylene carbonate solution at 130 o C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at - 0.62 V and an anodic pulse at 0.75 V Vs Zn 2+ /Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10 4 Ω cm and a charge carrier density of 1.67 x 10 14 cm -3 . Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.

Effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions

Energy Technology Data Exchange (ETDEWEB)

Chan, Hsing-Ting; Lin, Chih-Fan [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Yen, Yee-Wen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan (China); Chen, Chih-Ming, E-mail: chencm@nchu.edu.tw [Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2016-05-25

The Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample was current stressed with a density of 150 A/cm{sup 2} to investigate the effects of current stressing on the p-Bi{sub 2}Te{sub 3}/Sn interfacial reactions. Asymmetrical heating phenomenon was observed at the anodic Sn/p-Bi{sub 2}Te{sub 3} (50 °C) and cathodic p-Bi{sub 2}Te{sub 3}/Sn (120 °C) interfaces due to the Peltier effect. Besides the Peltier effect, the electromigration effect also influenced the growth of the SnTe phase and therefore polarity growth behavior was observed at the two interfaces. The growth of the SnTe phase at the cathodic p-Bi{sub 2}Te{sub 3}/Sn interface was accelerated because Peltier and electromigration effects drove more Sn atoms (dominant diffusion species) for the phase growth. By measuring the electromigration-induced atomic flux of Sn, the product of diffusivity and effective charge number (D × z*) was calculated to be 6.3 × 10{sup −9} cm{sup 2} s{sup −1} at 120 °C. - Highlights: • Sn/p-Bi{sub 2}Te{sub 3}/Sn sandwich-type sample is current stressed with a density of 150 A/cm{sup 2}. • Passage of an electric current induces Peltier and electromigration effects. • Peltier effect causes asymmetrical heating at the anode and cathode interfaces. • Both effects accelerate the SnTe growth at the cathode interface. • Sn is the dominant diffusion species identified by a marker experiment.

Experimental and density functional study of Mn doped Bi2Te3 topological insulator

Directory of Open Access Journals (Sweden)

A. Ghasemi

2016-12-01

Full Text Available We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS shows that Mn is a substitutional dopant of Bi and Te and also resides in the van der Waals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled.

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

Energy Technology Data Exchange (ETDEWEB)

Meng, Chang-Yu; Wei, Ming-Fang [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Geng, Lei, E-mail: lgeng.cn@gmail.com [Department of Materials Science and Engineering, Huaibei Normal University, Huaibei, Anhui 235000 (China); Hu, Pei-Qing; Yu, Meng-Xia [Department of Chemistry and Materials, Yulin Normal University,Yulin, Guangxi 537000 (China); Cheng, Wen-Dan [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2016-07-15

Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetric building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were firstly

Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaofei; Guo, Wanlin, E-mail: wlguo@nuaa.edu.cn [State Key Laboratory of Mechanics and Control for Mechanical Structures and Key Laboratory for Intelligent Nano Materials and Devices (MOE), Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2014-08-25

We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

Science.gov (United States)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-02-12

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

Science.gov (United States)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-01-08

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

2017-05-15

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.

Ga-Bi-Te system

International Nuclear Information System (INIS)

Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

1976-01-01

To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

Transverse peltier effect in Pb-Bi{sub 2}Te{sub 3} multilayer structures

Energy Technology Data Exchange (ETDEWEB)

Reitmaier, Christina; Walther, Franziska; Kyarad, Amir; Lengfellner, Hans [University of Regensburg (Germany)

2009-07-01

Metal-semiconductor multilayer structures show, according to model calculations, large anisotropy in their electrical and thermal transport properties. Multilayer stacks consisting of alternating layers of Pb and n-type Bi{sub 2}Te{sub 3} and prepared by a heating procedure displayed large thermoelectric anisotropy up to {delta}S{approx}200 {mu} V/K, depending on the thickness ratio p=d{sub BiTe}/d{sub Pb}, where d{sub BiTe} and d{sub Pb} are the thicknesses of Bi{sub 2}Te{sub 3} and Pb layers, respectively. From multilayer stacks, tilted samples with layers inclined with respect to the sample surface where obtained by cutting stacks obliquely to the stack axis. Non-zero off-diagonal elements in the Seebeck-tensor describing the thermopower of tilted samples allow for the occurance of a transverse Peltier effect. Experimental results demonstrate cooling by the transverse Peltier effect and are compared to model calculations.

Observation of hidden atomic order at the interface between Fe and topological insulator Bi2Te3.

Science.gov (United States)

Sánchez-Barriga, Jaime; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Volykhov, Andrey A; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I; Koch, Roland J; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V

2017-11-22

To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi 2 Te 3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi 2 Te 3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi 2 Te 3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2-5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi 2 Te 3 leading to the formation of septuple layers of Bi 3 Te 4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices.

Growth behavior of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Kang, Min A.; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kang, Seong Gu [School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2017-03-15

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was observed when grown on graphene or SiO{sub 2}/Si substrate. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO{sub 2}/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication and characterization of the p-type (Bi2Te3)x(Sb2Te3)1 ...

Indian Academy of Sciences (India)

electric materials in the composition range x = 0⋅2–0⋅3. (Yang et al 2000), but with improved thermoelectric properties, have been prepared by the zone melting method. The influence of Bi2Te3 content on thermoelectric properties was studied at room temperature. The results showed that the maximum figure of merit ...

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

Science.gov (United States)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Thermoelectric properties of quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound

Energy Technology Data Exchange (ETDEWEB)

Lu, Pengfei, E-mail: photon.bupt@gmail.com [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Li, Yiluan; Wu, Chengjie; Yu, Zhongyuan; Cao, Huawei; Zhang, Xianlong; Cai, Ningning; Zhong, Xuxia [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

2014-01-25

Highlights: • Sb and Se spin–orbit coupling play a key role in the band structure. • Substituted Bi/Sb and Te/Se have a limited impact on the transport coefficients. • n-Type doping will be preferred for quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compound. -- Abstract: The quaternary (Bi,Sb){sub 2}(Te,Se){sub 3} compounds are investigated using first-principles study and Boltzmann transport theory. The energy band structure and density of states are studied in detail. The electronic transport coefficients are then calculated as a function of chemical potential. The figure of merit ZT is obtained assuming a constant relaxation time and an averaged thermal conductivity. Our theoretical result agrees well with previous experimental data.

Thermoelectric Response in Single Quintuple Layer Bi2Te3

KAUST Repository

Sharma, S.

2016-10-05

Because Bi2Te3 belongs to the most important thermoelectric materials, the successful exfoliation of a single quintuple layer has opened access to an interesting two-dimensional material. For this reason, we study the thermoelectric properties of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations. The dependence of the lattice thermal conductivity on the phonon mean free path is evaluated along with the contributions of the acoustic and optical branches. We find that the thermoelectric response is significantly better for p- than for n-doping. By optimizing the carrier concentration, at 300 K, a ZT value of 0.77 is achieved, which increases to 2.42 at 700 K.

Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

Directory of Open Access Journals (Sweden)

Hao Xu

2015-08-01

Full Text Available Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film

International Nuclear Information System (INIS)

Yildiz, Koksal; Akgul, Unal; Atici, Yusuf; Leipner, Hartmut S.

2014-01-01

The film of thermoelectric ternary p-type (Bi 0.15 Sb 0.85 ) 2 Te 3 was deposited on polyimide foil substrate at 168 C using direct-current magnetron sputtering. Microstructural investigations of the film were performed by electron microscopy techniques. SEM observations showed that the film surface consisted of large-sized particulates with small-sized particles and also mound-like crystal agglomerates in some areas. Chemical composition of the film was analyzed using energy-dispersive X-ray spectrometer (EDS). It has been observed that the EDS results were in an agreement with nominal composition for the film. Detailed microstructural investigations were carried out using transmission electron microscopy (TEM). TEM images and selected area electron diffraction patterns showed that the film has randomly oriented polycrystalline grain structure. High-resolution TEM images indicated that the microstructure of film also contained nano-crystal structure, smaller than 10 nm. (orig.)

Thermoelectric Response in Single Quintuple Layer Bi2Te3

KAUST Repository

Sharma, S.; Schwingenschlö gl, Udo

2016-01-01

of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations

On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI

International Nuclear Information System (INIS)

Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

2012-01-01

The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI 3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

Anisotropic pressure effects on the Kagome Cu3Bi(SeO3)2O2Cl metamagnet

Science.gov (United States)

Wu, H. C.; Tseng, W. J.; Yang, P. Y.; Chandrasekhar, K. D.; Berger, H.; Yang, H. D.

2017-07-01

The anisotropic spin-flip-induced multiferroic property of the Kagome single-crystal Cu3Bi(SeO3)2O2Cl was recently investigated. The doping effects on the structural and magnetic properties of Cu3Bi(Se1-x Te x O3)2O2Cl (0 ≤slant x≤slant 0.6) polycrystalline samples were studied to further explore and manipulate the metamagnetic spin-flip transition. With higher Te concentration, the lattice constants a and b exhibit a linear increase, whereas the lattice constant c gradually decreases, which indicates that the anisotropic expansion and compression effect is induced by Te substitution in the Se site. Subsequently, the antiferromagnetic transition (T N) shifts to a higher temperature, the critical field ({{H}\\text{c}} ) of the metamagnetic spin-flip transition increases, and the value of the saturation magnetisation ({{M}\\text{s}} ) diminishes. Meanwhile, the effects of isotropic expansion (with Br doping) and compression (with external pressure) do not show a clear influence on the spin-flip phenomena. Our results emphasise the introduction of anisotropic pressure in Cu3Bi(SeO3)2O2Cl, which modulates the magnetic interaction of Cu (I)-O1-Cu (I) and Cu (I)-O1-Cu (II) and, consequently, enhances the {{H}\\text{c}} of the spin-flip transition.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Superconducting transition in TlBiTe/sub 2/ and TlTe compounds

Energy Technology Data Exchange (ETDEWEB)

Kantser, V G; Popovich, N S; Sidorenko, A S

1985-10-01

On the basis of zone structure calculation for TlBiTe/sub 2/ and TlTe it is found that TlBiTe/sub 2/ is a narrow-gap semiconductor and TlTe is a p-metal. At Tsub(c)=0.19 K TlTe is found to experience the superconducting transition. In TlBiTe/sub 2/ superconductivity is not observed to occur up to 0.05 K, since there is a possibility of occupying the high density of states zones because they are remote from actual ones. The earlier discovered superconducting transition in TlBiTe/sub 2/ is inherent in the alien phase of TlTe.

High Pressure X-Ray Diffraction Studies of Bi2-xSbxTe3 (x = 0,1,2)

Science.gov (United States)

Jacobsen, M. K.; Kumar, R. S.; Cornelius, A. L.; Sinogeiken, S. V.; Nico, M. F.

2007-12-01

Recently, pressure tuning of the thermoelectric figure of merit has been reported for several materials Bi2Te3 based thermoelectric materials [2],[10],[12]. In order to investigate the bulk properties of Bi2Te3, Sb2Te3, and their solid solution in detail, we have performed structural studies up to 20 GPa. Our diffraction results show that all three compounds transform from the ambient pressure structure to a high pressure phase between 7 and 10 GPa. In addition, these diffraction results have been converted to Vinet and Holzapfel equations of state to test the claim of electronic topological transitions in these structures [3].

Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

KAUST Repository

Cha, Judy J.; Kong, Desheng; Hong, Seung-Sae; Analytis, James G.; Lai, Keji; Cui, Yi

2012-01-01

Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates

KAUST Repository

Cha, Judy J.

2012-02-08

Studying the surface states of Bi 2Se 3 and Bi 2Te 3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi 2(Se xTe 1-x) 3 may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi 2(Se xTe 1-x) 3 nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi 2Se 3 to Bi 2Te 3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (∼10 19 cm -3) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives α of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is ∼T -0.49 within the appropriate field range (∼0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other. © 2012 American Chemical Society.

Observation of antiphase coherent phonons in the warped Dirac cone of Bi2Te3

Science.gov (United States)

Golias, E.; Sánchez-Barriga, J.

2016-10-01

In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi2Te3 . Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A1 g coherent-phonon mode in Bi2Te3 . We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the Γ K ¯ and the Γ M ¯ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi2Te3 .

Synthesis, crystal structure, and properties of Bi{sub 3}TeBO{sub 9} or Bi{sub 3}(TeO{sub 6})(BO{sub 3}): a non-centrosymmetric borate-tellurate(VI) of bismuth

Energy Technology Data Exchange (ETDEWEB)

Daub, Michael; Krummer, Michael; Hoffmann, Anke [Institut fuer Anorganische und Analytische Chemie, Albert-Ludwigs-Universitaet, Albertstrasse 21, 79104, Freiburg (Germany); Bayarjargal, Lkhamsuren [Institut fuer Geowissenschaften, Abt. Kristallographie, Goethe-Universitaet, Altenhoeferallee 1, 60438, Frankfurt am Main (Germany); Hillebrecht, Harald [Institut fuer Anorganische und Analytische Chemie, Albert-Ludwigs-Universitaet, Albertstrasse 21, 79104, Freiburg (Germany); Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet, Stefan-Meier-Strasse 25, 79104, Freiburg (Germany)

2017-01-26

Pale-yellow single crystals of the new borate tellurate(VI) Bi{sub 3}TeBO{sub 9} were obtained by reaction of stoichiometric amounts of Bi{sub 2}O{sub 3}, B{sub 2}O{sub 3}, and Te(OH){sub 6} at 780 C. The non-centrosymmetric crystal structure (P6{sub 3}, Z=2, a=8.7454(16), c=5.8911(11) Aa, 738 refl., 43 param, R1=0.037, wR2=0.093) contains isolated trigonal-planar BO{sub 3} units and nearly undistorted TeO{sub 6} octahedra. The Bi{sup 3+} cations are located in between in octahedral voids. The BiO{sub 6} octahedra are significantly distorted to a [3+3] pattern (2.25/2.50 Aa) due to the ns{sup 2} configuration. According to the structural features, the formula can be written as Bi{sub 3}(TeO{sub 6})(BO{sub 3}). Alternatively, the structure can also be described as hcp of oxygen with Te{sup VI} and Bi{sup III} in octahedral voids and B{sup III} in trigonal- planar voids. The vibrational spectra show the typical features of BO{sub 3} and TeO{sub 6} units with a significant {sup 10}B/{sup 11}B isotopic splitting of the IR-active B-O valence mode (1248 and 1282 cm{sup -1}). The UV/Vis spectrum shows an optical band edge with an onset around 480 nm (2.6 eV). MAS-NMR spectra of {sup 11}B show an anisotropic signal with a quadrupole coupling constant of C{sub Q}=2.55 MHz. and a very small deviation from rotational symmetry (η=0.2). The isotropic chemical shift is 20.1 ppm. The second harmonic generation (SHG) test was positive with an activity comparable to potassium dihydrogen phosphate (KDP). Bi{sub 3}TeBO{sub 9} decomposes in air at 825 C to Bi{sub 2}TeO{sub 5}. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

International Nuclear Information System (INIS)

Fan, Xi'an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng

2016-01-01

Bi 2 Te 3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi 2 Te 3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb) 2 Te 3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb) 2 Te 3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi 0.44 Sb 1.56 Te 3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi 0.36 Sb 1.64 Te 3 and Bi 0.4 Sb 1.6 Te 3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi 2 Te 3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi 2 Te 3 based wastes were directly selected as raw materials for TE alloys. • Contaminants from cutting fluid and oxides could be effectively removed. �

A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

Science.gov (United States)

Chen, W. C.; Wu, Y. C.; Hwang, W. S.; Hsieh, H. L.; Huang, J. Y.; Huang, T. K.

2015-06-01

In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi2Te3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi2Te3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi2Te3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi2Te3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi2Te3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm.

High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

Directory of Open Access Journals (Sweden)

Miguel Muñoz Rojo

2015-08-01

Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

Evolution of thermoelectric performance for (Bi,Sb)2Te3 alloys from cutting waste powders to bulks with high figure of merit

Science.gov (United States)

Fan, Xi‧an; Cai, Xin zhi; Han, Xue wu; Zhang, Cheng cheng; Rong, Zhen zhou; Yang, Fan; Li, Guang qiang

2016-01-01

Bi2Te3 based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi2Te3 based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb)2Te3 alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb)2Te3 alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi0.44Sb1.56Te3 was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi0.36Sb1.64Te3 and Bi0.4Sb1.6Te3 alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi2Te3 based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers.

Investigation of the electronic and magnetic structure of thin layer FeTe on Bi{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Cornils, Lasse; Manna, Sujit; Kamlapure, Anand; Haenke, Torben; Wiebe, Jens; Wiesendanger, Roland [Department of Physics, University of Hamburg, Hamburg (Germany); Hu, Jin; Mao, Zhiqiang [Department of Physics, Tulane University, New Orleans (United States); Brummerstedt Iversen, Bo; Hofmann, Philip [Interdisciplinary Nanoscience Center iNANO, Aarhus University (Denmark)

2016-07-01

The surprising discovery of Fe based superconductors in 2008 lead to a big effort in finding new materials with very high critical temperatures. One good example are Fe-chalcogenides. Although the parent compound FeTe is not superconducting, the situation changes drastically on interfacing the material with other substrates. Recently He and coworkers found zero resistance at the interface of Bi{sub 2}Te{sub 3} films grown on bulk FeTe, which showed a transition temperature of 12 K. In this talk we present our latest results on our investigation of the electronic and magnetic nature of epitaxially grown FeTe thin films on the topological insulator Bi{sub 2}Te{sub 3} using spin-polarized scanning tunneling microscopy and spectroscopy. Up to several monolayers of FeTe, an antiferromagnetic structure similar to the one observed on its bulk compound FeTe was clearly visible. Surprisingly we found a gap around the Fermi level indicating proximity to superconductivity in coexistence with magnetism on the nanoscale.

Structure of Profiled Crystals Based on Solid Solutions of Bi2Te3 and Their X-Ray Diagnostics

Science.gov (United States)

Voronin, A. I.; Bublik, V. T.; Tabachkova, N. Yu.; Belov, Yu. M.

2011-05-01

In this work, we used x-ray structural diagnostic data to reveal the formation of structural regularities in profiled polycrystalline ingots based on Bi and Sb chalcogenide solid solutions. In Bi2Te3 lattice crystals, the solid phase grows such that the cleavage surfaces are perpendicular to the crystallization front. The crystallization singularity determines the nature of the growth texture. Because texture is an important factor determining the anisotropy of properties, which in turn determines the suitability of an ingot for production of modules and the possibility of figure of merit improvement, its diagnostics is an important issue for technology testing. Examples of texture analysis using the method of straight pole figure (SPF) construction for profiled crystals are provided. The structure of the surface layers in the profiled ingots was studied after electroerosion cutting. In addition, the method of estimation of the disturbed layer depth based on the nature of texture changes was used.

Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 (China); Song, Yuxin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se; Gong, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Lu, Pengfei [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

2015-08-15

Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

International Nuclear Information System (INIS)

Chen, W C; Wu, Y C; Hwang, W S; Hsieh, H L; Huang, J Y; Huang, T K

2015-01-01

In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi 2 Te 3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi 2 Te 3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi 2 Te 3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi 2 Te 3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi 2 Te 3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm. (paper)

Structural, chemical, and thermoelectric properties of Bi2Te3 Peltier materials. Bulk, thin films, and superlattices

International Nuclear Information System (INIS)

Peranio, Nicola

2008-01-01

In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi 2 Te 3 and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi 2 (Te 0.91 Se 0.09 ) 3 and p-type (Bi 0.26 Sb 0.74 ) 1.98 (Te 0.99 Se 0.01 ) 3.02 bulk materials synthesised by the Bridgman technique. (II) Bi 2 Te 3 thin films and Bi 2 Te 3 /Bi 2 (Te 0.88 Se 0.12 ) 3 superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF 2 substrates with periods of δ-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to and an amplitude of about 10 pm and (ii) a wave vector parallel to {1,0,10} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

Study of the circular photo-galvanic effect in electrically gated (Bi,Sb)2Te3 thin films

Science.gov (United States)

Pan, Yu; Pillsbury, Timothy; Richardella, Anthony; Flanagan, Thomas; Samarth, Nitin

Illumination with circularly polarized light is known to produce a helicity dependent photocurrent in topological insulators such as Bi2Se3 [Nature Nanotech. 7, 96 (2012)]. Symmetry considerations suggest that this ``circular photo-galvanic effect'' (CPGE) arises purely from the surface. However, whether or not the CPGE is directly related to optical excitations from the helical surface states is still under debate. To clarify the origin of the CPGE, we first compare the helicity dependent photocurrent in intrinsic (Bi,Sb)2Te3 to Cr doped (Bi,Sb)2Te3 thin films in which the Dirac surface states are perturbed by magnetic coupling. Secondly, we discuss the tunable CPGE in electrically gated (Bi,Sb)2Te3 thin films excited by optical excitations at different wavelengths. The dependence on the chemical potential and the photon energy of the excitation unveils the origin of the CPGE. Funded by ONR.

Irradiation-induced doping of Bismuth Telluride Bi2Te3

International Nuclear Information System (INIS)

Rischau, Carl Willem

2014-01-01

Bismuth Telluride Bi 2 Te 3 has attracted enormous attention because of its thermoelectric and topological insulator properties. Regarding its bulk band structure Bi 2 Te 3 is a band insulator with an energy gap of around 150-170 meV. However, the native anti-site defects that are present in real samples always dope this band insulator and shift the chemical potential into the valence or conduction band. In this PhD, the Fermi surface of as-grown and electron irradiated p-type Bi 2 Te 3 single crystals has been investigated extensively using electrical transport experiments. For moderate hole concentrations (p ∼< 5 x 10 18 cm -3 ), it is confirmed that electrical transport can be explained by a six-valley model and the presence of strong Zeeman-splitting. At high doping levels (p≅5 x 10 18 cm -3 ), the hole concentrations determined from Hall and Shubnikov-de Haas (SdH) effect differ significantly which is attributed to an impurity/defect band introduced by the anti-site defects. In this work, we show that it is possible to dope p-type Bi 2 Te 3 in a very controlled manner using electron-irradiation by performing detailed in- and ex-situ electrical transport studies on samples irradiated at room and at low temperatures with 2.5 MeV electrons. These studies show that the defects induced at both irradiation temperatures act as electron donors and can thus be used to convert the conduction from p- to n-type. The point of optimal compensation is accompanied by an increase of the low-temperature resistivity by several orders of magnitude. Irradiation at room temperature showed that both the p-type samples obtained after irradiation to intermediate doses as well as the samples in which the conduction has been converted to n-type by irradiation, still have a well defined Fermi surface as evidenced by SdH oscillations. By studying the Hall coefficient in-situ during low temperature electron irradiation, the coexistence of electron- and hole-type carriers was evidenced

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys

Directory of Open Access Journals (Sweden)

Kim E.-B.

2017-06-01

Full Text Available In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. The Bi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.

Space charge limited current conduction in Bi2Te3 thin films

International Nuclear Information System (INIS)

Sathyamoorthy, R.; Dheepa, J.; Velumani, S.

2007-01-01

Bi 2 Te 3 is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi 2 Te 3 thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10 -5 m bar on clean glass substrates at room temperature. An Al-Bi 2 Te 3 -Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V t ), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V t on t 2 and log J on log t. The hole concentration in the films were found to be n 0 = 1.65 * 10 10 m -3 . The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V t is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

Science.gov (United States)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

LaBiTe3: An unusual thermoelectric material

KAUST Repository

Singh, Nirpendra

2014-06-18

Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

LaBiTe3: An unusual thermoelectric material

KAUST Repository

Singh, Nirpendra; Schwingenschlö gl, Udo

2014-01-01

Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

Effect of current on the microstructure and performance of (Bi2Te3)0.2(Sb2Te3)0.8 thermoelectric material via field activated and pressure assisted sintering

International Nuclear Information System (INIS)

Chen Ruixue; Meng Qingsen; Fan Wenhao; Wang Zhong

2011-01-01

(Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 thermoelectric material was sintered via a field activated and pressure assisted sintering (FAPAS) process. By applying different current intensity (0, 60, 320 A/cm 2 ) in the sintering process, the effects of electric current on the microstructure and thermoelectric performance were investigated. This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of (Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 samples. When the current intensity was raised to 320 A/cm 2 , the preferred orientation of grains was observed. Moreover, positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed. An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm 2 , respectively. (semiconductor materials)

Evolution of thermoelectric performance for (Bi,Sb){sub 2}Te{sub 3} alloys from cutting waste powders to bulks with high figure of merit

Energy Technology Data Exchange (ETDEWEB)

Fan, Xi' an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Cai, Xin zhi, E-mail: xzcwust@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Han, Xue wu, E-mail: hanxuewu1990@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); Zhang, Cheng cheng, E-mail: zcc516990418@live.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081 (China); and others

2016-01-15

Bi{sub 2}Te{sub 3} based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi{sub 2}Te{sub 3} based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb){sub 2}Te{sub 3} alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb){sub 2}Te{sub 3} alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used in this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi{sub 0.44}Sb{sub 1.56}Te{sub 3} was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi{sub 0.36}Sb{sub 1.64}Te{sub 3} and Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi{sub 2}Te{sub 3} based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi{sub 2}Te{sub 3} based wastes were directly selected as raw materials

Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

Science.gov (United States)

Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

2018-03-01

Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state

Measurement of the transport properties of (Sb2Te3)sub(0.75)(Bi2Te3)sub(0.25) solid solution with addition of Tl2Te3

International Nuclear Information System (INIS)

Sher, A.

1983-03-01

The thermoelectric parameters of the solid solution (Sb 3 Te 3 )sub(0.75)(Bi 2 Te 3 )sub(0.25) in the presence of a low concentration of Tl 3 Te 3 were examined. The electrical conductivity, thermal conductivity, Seebeck coefficient and Hall constant were measured on samples which represent the upper parts of the ingots, in the temperature range 10K-300K. The lattice thermal conductivity, carrier, mobility, effective mass and carrier concentration were calculated from the measured parameters. The variation of the carrier mobility with temperature was similar in all the measured samples. At temperatures higher than 80K the mobility was proportional to Tsup(-33/2). At lower temperatures the mobility approached a saturation value which decreased with increasing Tl 2 Te 3 concentration. At about room temperature, the mobility was already not proportional to Tsup(x). Increasing the Tl 2 Te 3 or Sb 2 Se 3 concentration resulted in a lower deviation from the Tsup(x) dependence and a slower increase in the lattice thermal conductivity with decreasing temperature. Addition of Tl 2 Te 3 to the solid solution resulted in minor improvement in the thermoelectric quality which depends on the mobility, effective mass and lattice thermal conductivity. The thermoelectric properties were nearly the same as those obtained by addition of Sb 2 Se 3 to the solid solution. The addition of Tl 2 Te 3 annuled an effect of increasing carrier concentration with decreasing temperature. It resulted in a slower decrease in the Seebeck coefficient. (H.K.)

Structural and Galvanomagnetic properties in Mn-Bi2Te3 thin films

Science.gov (United States)

Bidinakis, K.; Speliotis, Th.

2017-12-01

Bismuth-based binary chalcogenide compounds such as Bi2Te3 and Bi2Se3 are well known materials for their excellent thermoelectric properties due to their near-gap electronic structure. In the last few years these materials have received attention for exhibiting new physics of 3D topological insulators (TI). Possible applications of TI based devices range from quantum computing, spin based logic and memory to electrodynamics. The 3D TIs present spin-momentum-locked surface states by time reversal symmetry (TRS). Introducing magnetic doping in a TI, brakes the TRS and is predicted to open the gap at Dirac point, resulting in exotic quantum phenomena. This interaction between magnetism and topologically protected states is of potential attention for applications in modern spintronics. Quantum phenomena such as weak antilocalization observed in these nanostructures are described. In this work, granular Mn-Bi2Te3 thin films were grown by DC magnetron sputtering on Si(111) substrates and were submitted to ex situ annealing. We present results for the crystal structure of sputtered and annealed films characterized with X-ray diffraction and high-resolution scanning electron microscopy (HRSEM). The surface analysis was studied with atomic force microscopy (AFM). Magnetotransport measurements were performed using standard four probe technique with Hall and MR configurations, with perpendicular magnetic fields up to 9T and temperatures from 300 to 3K.

Thermoelectric properties of unoxidized graphene/Bi{sub 2}Te{sub 2.7}Se{sub 0.3} composites synthesized by exfoliation/re-assembly method

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Il; Lee, Eun Sil; Kim, Jong-Young [Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Gyeonggi-do (Korea, Republic of); Choi, Soon-Mok [School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan (Korea, Republic of); Lee, Kyu Hyoung [Materials R and D Center, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Won-Seon [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul (Korea, Republic of)

2014-04-15

Nanocomposites of n-type thermoelectric Bi{sub 2}Te{sub 2.7}Se{sub 0.3} (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscroll-type crystals by chemical exfoliation, and were re-assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark-plasma-sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS-US and UG/BTS-EX composites were ∝0.8 at the UG concentration of 0.05 wt%. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Microstructural and thermoelectric properties of p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} compounds

Energy Technology Data Exchange (ETDEWEB)

Seo, J; Park, K; Lee, C; Kim, J

1997-07-01

The p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and n-type SbI{sub 3}-doped Bi{sub 2}Te{sub 2.85}Se{sub 0.15} thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 C, were 2.69 x 10{sup {minus}3}/K and 2.35 x 10{sup {minus}3}/K, respectively.

Evidence for surface-generated photocurrent in (Bi,Sb)2Se3and(Bi,Sb)2Te3 thin films

Science.gov (United States)

Pan, Yu; Richardella, Anthony; Yao, Bing; Lee, Joon Sue; Flanagan, Thomas; Kandala, Abhinav; Samarth, Nitin; Yeats, Andrew; Mintun, Peter; Awschalom, David

2015-03-01

Illumination with circularly polarized light is known produce a helicity-dependent photocurrent in topological insulators such as Bi2Se3 [e.g. Nature Nanotech. 7, 96 (2012)]. However, the exact origin of this effect is still unclear since it is observed with photons well above the bulk band gap. We report measurements of the polarization-dependent photocurrent in a series of (Bi,Sb)2Se3 thin films with different carrier concentrations and find that the photocurrent is enhanced as we increase the population of the surface states. This finding is supported by a study of helicity-dependent photocurrents in back-gated (Bi,Sb)2Te3 thin films, where the chemical potential is varied electrostatically. By illuminating our samples at different wavelengths, we show that the helicity-dependent photocurrent is enhanced when the photon energy approaches the energy difference between the lowest and first excited (unoccupied) topological surface states. This leads us to attribute the helicity-dependent photocurrent in topological insulators to optical excitations between these two spin-textured surface states. We will also discuss experiments imaging the spatial variation of these helicity-dependent photocurrents. This work is supported by ONR.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Self-Assembly of Bi₂Te₃-Nanoplate/Graphene-Nanosheet Hybrid by One-Pot Route and Its Improved Li-Storage Properties

Directory of Open Access Journals (Sweden)

Xinbing Zhao

2012-07-01

Full Text Available A sandwich structured Bi₂Te₃-nanoplates/graphene-nanosheet (Bi₂Te₃/G hybrid has been synthesized by a facile in situ solvothermal route and has been investigated as a potential anode material for Li-ion batteries. Bi₂Te₃ grows during the solvothermal process with the simultaneous reduction of graphite oxide into graphene. The in situ formation process of the hybrid has been investigated by X-ray diffraction and X-ray photoelectron spectra. The Li-storage mechanism and performance of Bi₂Te₃/G and bare Bi₂Te₃ have been studied by galvanostatic cycling and cyclic voltammetry. The Bi₂Te₃/G sandwich exhibits an obviously improved cycling stability compared to bare Bi₂Te₃. The enhancement in electrochemical performance can be attributed to the combined conducting, confining and dispersing effects of graphene for Bi₂Te₃ nanoplates and to the self-assembled sandwich structure.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

Science.gov (United States)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Separation of top and bottom surface conduction in Bi2Te3 thin films

International Nuclear Information System (INIS)

Yu Xinxin; He Liang; Lang Murong; Jiang Wanjun; Kou Xufeng; Tang Jianshi; Huang Guan; Wang, Kang L; Xiu Faxian; Liao Zhiming; Zou Jin; Wang Yong; Zhang Peng

2013-01-01

Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi 2 Te 3 thin films through gate dependent Shubnikov–de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi 2 Te 3 . In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces. (paper)

Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

Science.gov (United States)

Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

2018-04-01

In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

Science.gov (United States)

Zhou, Yi; Li, Gongping

2018-05-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Synthesis of diluted magnetic semiconductor Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals in a host glass matrix

Energy Technology Data Exchange (ETDEWEB)

Silva, R.S. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Mikhail, H.D., E-mail: ricardosilva@fisica.uftm.edu.br [Instituto de Ciências Tecnológicas e Exatas (ICTE), Departamento de Engenharia Mecânica, Universidade Federal do Triângulo Mineiro, 38064-200 Uberaba, Minas Gerais (Brazil); Pavani, R. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Cano, N.F. [Departamento de Ciências do Mar, Universidade Federal de São Paulo, 11030-400 Santos, São Paulo (Brazil); Silva, A.C.A.; Dantas, N.O. [Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Universidade Federal de Uberlândia, 38400-902 Uberlândia, Minas Gerais (Brazil)

2015-11-05

Diluted magnetic semiconductors of manganese doped in bismuth-telluride nanocrystals (Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs) were grown in a glass matrix and investigated by Transmission Electron Microscopy, X-Ray Diffraction, Atomic Force Microscopy/Magnetic Force Microscopy, and Electron Paramagnetic Resonance. TEM images showed that the nanocrystals formed within the glass matrix were nearly spherical, with average sizes between 4 and 5 nm, and d{sub 015}-spacing of approximately 0.322 nm, which corresponds to the (015) interplanar distance in Bi{sub 2}Te{sub 3} bulk. The diffraction patterns showed that the diffraction peak associated with the (015) plane of the Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals shifts to larger diffraction angles as manganese (Mn) concentration increases, suggesting that the Mn{sup 2+} ions are substitutional defects occupying Bi sites (Mn{sub Bi}). AFM and MFM measurements showed magnetic phase contrast patterns, providing further evidence of Mn{sup 2+} ion incorporation in the nanocrystal structure. EPR signal of manganese ion incorporation and valence states in the crystalline structure of the Bi{sub 2}Te{sub 3} nanocrystals confirmed the presence of the Mn{sup 2+} state. - Highlights: • Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs were synthesized in a glass matrix by fusion method. • Transmission Electronic Microscopy shows the formation of Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs. • The sp-d exchange interaction in DMS NCs can be evidenced by X Ray-Diffraction and Magnetic Force Microscopy. • Electron Paramagnetic Resonance spectra confirmed that Mn{sup 2+} ions are located in two distinct Bi{sub 2}Te{sub 3} NCs sites.

Effects of Ni and carbon-coated Ni addition on the thermoelectric properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} base composites

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sang Min; Dharmaiah, Peyala; Femi, Olu Emmanuel; Lee, Chul Hee; Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr

2017-07-01

In this paper, we report the effect of nickel (Ni) and carbon coated nickel (C-Ni) on the thermoelectric and mechanical properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (GA) base composites. Ni and C-Ni powders were synthesized using pulse wire evaporation and mixed with 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} in a planetary ball mill. The morphology of the Ni and C-Ni powders and GA + x (x = none, Ni, or C-Ni) composites were examined using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The thermoelectric properties of the GA + x (x = none, Ni, or C-Ni) composites shows that the addition of Ni increases the carrier concentration while the presence of C-Ni reduces the carrier concentration to a level comparable to the bare sample (x = 0). Subsequently, the Seebeck coefficient of the GA + C-Ni sample increases by about 18% more than in the bare sample. The thermal conductivity of the GA + Ni and GA + C-Ni samples was considerably lower at room temperature compared to the bare sample. The mechanical properties of the GA + Ni and GA + C-Ni composite samples show a three-fold improvement compared to the bare sample. - Highlights: • Ni and carbon-coated Ni nanoparticles were incorporated into 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (BST) matrix. • Seebeck coefficient increased by 18% for BST/carbon coated Ni composites. • BST/carbon coated Ni composite reduces the thermal conductivity (21%). • The Vickers hardness of the BST/C-Ni composite samples significantly improved.

Thermoelectric properties of I-doped n-type Bi2Te3-based material prepared by hydrothermal and subsequent hot pressing

Directory of Open Access Journals (Sweden)

Fang Wu

2017-04-01

Full Text Available I-doped Bi2Te3−xIx (x=0, 0.05, 0.1, 0.2 flower-like nanoparticles were synthesized by a hydrothermal method through a careful adjustment of the amount of ethylenediamine tetraacetic acid surfactant. The nanopowders of flower-like nanoparticles were hot-pressed into bulk pellets and the thermoelectric properties of the pellets were investigated. The results showed that I-doping decreased the electrical resistivity effectively, and the thermal conductivitives of the Bi2Te3−xIx bulk samples was lower because of the closer atomic mass of I compared to Te. As a result, a ZT value of 1.1 was attained at 448 K for the Bi2Te2.9I0.1 sample.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

Science.gov (United States)

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Structural, chemical, and thermoelectric properties of Bi{sub 2}Te{sub 3} Peltier materials. Bulk, thin films, and superlattices

Energy Technology Data Exchange (ETDEWEB)

Peranio, Nicola

2008-07-01

In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi{sub 2}Te{sub 3} and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi{sub 2}(Te{sub 0.91}Se{sub 0.09}){sub 3} and p-type (Bi{sub 0.26}Sb{sub 0.74}){sub 1.98}(Te{sub 0.99}Se{sub 0.01}){sub 3.02} bulk materials synthesised by the Bridgman technique. (II) Bi{sub 2}Te{sub 3} thin films and Bi{sub 2}Te{sub 3}/Bi{sub 2}(Te{sub 0.88}Se{sub 0.12}){sub 3} superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF{sub 2} substrates with periods of {delta}-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to <5,-5,1> and an amplitude of about 10 pm and (ii) a wave vector parallel to {l_brace}1,0,10{r_brace} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

Pressure effects on the physical properties of Kagome Cu3Bi(SeO3)2O2Cl metamagnet

Science.gov (United States)

Tseng, Wu-Jyun; Wu, Hung-Cheng; Yang, Pei-Ying; Kakarla, D. Chandrasekhar Kakarla; Yang, Hung-Duen; Low temperature physics Lab, Department of physics, National Sun Yat-Sen University Team

The effects of pressure on the structural and magnetic properties have been studied in Kagome Cu3Bi(Se1-xTexO3)2 O2Cl polycrystalline samples. The initial crystal structure Pmmn is gradually converted to Pcmn space group when x >= 0.6, which could be determined by synchrotron X-ray diffraction, Raman spectroscopy, and magnetization measurements. The antiferromagnetic transition temperature (TN) and the critical field (HC) of metamagnetic spin-flip transition increase, but the value of saturation magnetization (MS) decreases with Te doping concentration. Under external pressure, the TN and MS increase, while the HC reduces. These anisotropic pressure results could be explained by the modulation of competition between ferromagnetic intralayer and antiferromagnetic interlayer interactions. The route to control the metamagnetic spin-flip transition by anisotropic pressure effects might be helpful to understand the mechanism of field- induced multiferroic Cu3Bi(SeO3)2 O2Cl

Raman scattering investigation of Bi2Te3 hexagonal nanoplates prepared by a solvothermal process in the absence of NaOH

International Nuclear Information System (INIS)

Liang Yujie; Wang Wenzhong; Zeng Baoqing; Zhang Guling; Huang Jing; Li Jin; Li Te; Song Yangyang; Zhang Xiuyu

2011-01-01

Research highlights: → Hexagonal Bi 2 Te 3 thin nanoplates were synthesized by a simple solvothermal method. → Optical properties of the nanoplates were investigated by micro-Raman spectroscopy. → Infrared (IR) active mode (A 1u ) is greatly activated in Raman scattering spectrum. → Infrared (IR) active mode (A 1u ) shows up in Raman spectrum of hexagonal nanoplates. → Raman spectrum clearly shows crystal symmetry breaking of hexagonal nanoplates. - Abstract: Hexagonal Bi 2 Te 3 nanoplates were synthesized by a simple solvothermal process in the absence of NaOH. The composition, morphology and size of the as-prepared products were characterized by powder X-ray diffraction (XRD) and transmission electron microscopy (TEM). Raman scattering optical properties of the as-prepared Bi 2 Te 3 nanoplates were investigated by micro-Raman spectroscopy. The Raman spectrum shows that infrared (IR) active mode (A 1u ), which must be odd parity and is Raman forbidden for bulk crystal due to its inversion symmetry, is greatly activated and shown up clearly in Raman scattering spectrum. We attribute the appearance of infrared active (A 1u ) in Raman spectrum to crystal symmetry breaking of Bi 2 Te 3 hexagonal nanoplates. The as-grown Bi 2 Te 3 hexagonal nanoplates, exhibiting novel Raman optical properties compared with bulk crystals, may find potential applications in thermoelectric devices.

Observation of hidden atomic order at the interface between Fe and topological insulator Bi_{2}Te_{3}

OpenAIRE

Sanchez-Barriga, Jaime; Ogorodnikov, Ilya I.; Kuznetsov, Mikhail V.; Volykhov, Andrey A.; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I.; Koch, Roland J.; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V.

2017-01-01

Abstract: To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface diso...

Investigation of radiation shielding properties for MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses

Science.gov (United States)

Sayyed, M. I.; Çelikbilek Ersundu, M.; Ersundu, A. E.; Lakshminarayana, G.; Kostka, P.

2018-03-01

In this work, glasses in the MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) system, which show a great potential for optoelectronic applications, were used to evaluate their resistance under high energy ionizing radiations. The basic shielding quantities for determining the penetration of radiation in glass, such as mass attenuation coefficient (μ/ρ), half value layer (HVL), mean free path (MFP) and exposure buildup factor (EBF) values were investigated within the energy range 0.015 MeV ‒ 15 MeV using XCOM program and variation of shielding parameters were compared with different glass systems and ordinary concrete. From the derived results, it was determined that MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses show great potentiality to be used under high energy radiations. Among the studied glass compositions, Bi2O3 and WO3 containing glasses were found to possess superior gamma-ray shielding effectiveness.

Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

Science.gov (United States)

Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

2018-01-01

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

Mechanical properties of bismuth telluride (Bi{sub 2}Te{sub 3}) processed by high pressure torsion (HPT); Propiedades mecanicas del telururo de bismuto (Bi{sub 2}Te{sub 3}) procesado mediante torsion bajo alta presion (HPT)

Energy Technology Data Exchange (ETDEWEB)

Santamaria, J. A.; Alkorta, J.; Gil Sevillano, J.

2013-06-01

Bismuth telluride, Bi{sub 2}Te{sub 3}, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi{sub 2}Te{sub 3} is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric figure of merit results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa) using high pressure torsion (HPT, one turn at room temperature). Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation. (Author) 11 refs.

Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.

Science.gov (United States)

Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y

2015-04-14

The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

Directory of Open Access Journals (Sweden)

Alieva A. P.

2012-06-01

Full Text Available Nanowires formation process on a (0001 surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1—Te(1 there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.

Preparation of n-type Bi{sub 2}Te{sub 3} thermoelectric materials by non-contact dispenser printing combined with selective laser melting

Energy Technology Data Exchange (ETDEWEB)

Wu, Keping; Yan, Yonggao; Zhang, Jian; Mao, Yu; Xie, Hongyao; Zhang, Qingjie; Tang, Xinfeng [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei (China); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, WA (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI (United States)

2017-06-15

The manufacturing cost has been a bottle neck for broader applications of thermoelectric (TE) modules. We have developed a rapid, facile, and low cost method that combines non-contact dispenser printing with selective laser melting (SLM) and we demonstrate it on n-type Bi{sub 2}Te{sub 3}-based materials. Using this approach, single phase n-type Bi{sub 2}Te{sub 2.7}Se{sub 0.3} thin layers with the Seebeck coefficient of -152 μV K{sup -1} at 300 K have been prepared. Assembling such thin layers on top of each other, the performance of thus prepared bulk sample is comparable to Bi{sub 2}Te{sub 3}-based materials fabricated by the conventional techniques. Dispenser printing combined with SLM is a promising manufacturing process for TE materials. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

Science.gov (United States)

Jiang, Chengpeng; Fan, Xi'an; Hu, Jie; Feng, Bo; Xiang, Qiusheng; Li, Guangqiang; Li, Yawei; He, Zhu

2018-04-01

During the past few decades, Bi2Te3-based alloys have been investigated extensively because of their promising application in the area of low temperature waste heat thermoelectric power generation. However, their thermal stability must be evaluated to explore the appropriate service temperature. In this work, the thermal stability of zone melting p-type (Bi, Sb)2Te3-based ingots was investigated under different annealing treatment conditions. The effect of service temperature on the thermoelectric properties and hardness of the samples was also discussed in detail. The results showed that the grain size, density, dimension size and mass remained nearly unchanged when the service temperature was below 523 K, which suggested that the geometry size of zone melting p-type (Bi, Sb)2Te3-based materials was stable below 523 K. The power factor and Vickers hardness of the ingots also changed little and maintained good thermal stability. Unfortunately, the thermal conductivity increased with increasing annealing temperature, which resulted in an obvious decrease of the zT value. In addition, the thermal stabilities of the zone melting p-type (Bi, Sb)2Te3-based materials and the corresponding powder metallurgy samples were also compared. All evidence implied that the thermal stabilities of the zone-melted (ZMed) p-type (Bi, Sb)2Te3 ingots in terms of crystal structure, geometry size, power factor (PF) and hardness were better than those of the corresponding powder metallurgy samples. However, their thermal stabilities in terms of zT values were similar under different annealing temperatures.

The influence of nanoscale heterostructures on the thermoelectric properties of bi-substituted Tl{sub 5}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Heinke, Frank; Schlegel, Robert; Schwarzmueller, Stefan; Oeckler, Oliver [Institute for Mineralogy, Crystallography, and Materials Science, Faculty of Chemistry and Mineralogy, Leipzig University (Germany); Eisenburger, Lucien [University of Munich (LMU), Department Chemie (Germany)

2017-03-16

Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} crystallizes in a distorted variant of the Tl{sub 5}Te{sub 3} structure type in the space group I4/m. The symmetry reduction compared to Tl{sub 5}Te{sub 3} (space group I4/mcm) is a consequence of cation ordering as shown by resonant X-ray scattering using synchrotron radiation. Tl and Bi predominantly occupy one Wyckoff site each. This ordering is accompanied by displacements of Te atoms. The influence of nanostructuring on the thermoelectric performance of Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} was investigated for the new composite model system Tl{sub 4.5}Bi{sub 0.5}Te{sub 3} - TlInTe{sub 2}. For the nominal composition (Tl{sub 4.5}Bi{sub 0.5}Te{sub 3}){sub 0.6}(TlInTe{sub 2}){sub 0.4}, the thermoelectric Figure of merit ZT reaches 0.8 at 325 C. Nanoscaled precipitates with sizes of about 100-200 nm probably have beneficial influence on the thermal conductivity at this temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron Microscopy investigation of Sb{sub 2-x}Bi{sub x}Te{sub 3} hexagonal crystal structure growth prepared from sol–gel method

Energy Technology Data Exchange (ETDEWEB)

Tongpeng, Suparat [Center of Excellence for Innovation in Chemistry (PERCH-CIC), Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarakonsri, Thapanee, E-mail: tsarakonsri@gmail.com [Center of Excellence for Innovation in Chemistry (PERCH-CIC), Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Isoda, Seiji [Institute for Integrated Cell-Materials Sciences (iCeMS), Kyoto University (Japan); Haruta, Mitsutaka; Kurata, Hiroki [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Thanachayanont, Chanchana [National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Rd., Klong 1, KlongLuang, Pathumthani (Thailand)

2015-11-01

Sb – Bi – Te ternary compounds, with ZT values (unitless figure of merit for semiconductor materials) as high as 1.28, have long been known as the best thermoelectric materials for use in thermoelectric cooling and power generation operated near room temperature. In this research, p-type Sb{sub 2-x}Bi{sub x}Te{sub 3} (x = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) compounds were synthesized by sol–gel method using bismuth (III) acetate, antimony (III) acetate and tellurium dioxide as precursors. The mole ratio of metal precursor: solvent: organic solvent was 1:60:4. The obtained gels of Sb{sub 2-x}Bi{sub x}Te{sub 3} were annealed to complete the synthesis at 773 K for 2 h under nitrogen atmosphere. Sb{sub 2}Te{sub 3}, Sb{sub 1.6}Bi{sub 0.4}Te{sub 3}, and SbBiTe{sub 3} compounds were observed by X-ray Diffraction (XRD) as main phases in samples with x = 0–0.2, 0.4–0.6, and 0.8–1.0, respectively. An increase in the lattice parameter a suggested an expansion of unit cells, due to the substitution of Bi in Sb crystallographic positions. The morphology, as revealed by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) images, is one of aligned hexagonal nanosheets, while the Selected Area Diffraction (SAD) patterns matched well with the phases characterized by XRD. - Highlights: • Sb{sub 2-x}Bi{sub x}Te{sub 3} (x = 0.0–1.0) hexagonal nanosheets were prepared by sol–gel method. • It is the simple and economic method with the first time reported for these structures. • High crystallinity hexagonal nanosheets were oriented into small bundles form. • It is expected to have a high ZT value at room temperature.

Evidence of a 2D Fermi surface due to surface states in a p-type metallic Bi2Te3

Science.gov (United States)

Shrestha, K.; Marinova, V.; Lorenz, B.; Chu, C. W.

2018-05-01

We present a systematic quantum oscillations study on a metallic, p-type Bi2Te3 topological single crystal in magnetic fields up to B  =  7 T. The maxima/minima positions of oscillations measured at different tilt angles align to one another when plotted as a function of the normal component of magnetic field, confirming the presence of the 2D Fermi surface. Additionally, the Berry phase, β  =  0.4  ±  0.05 obtained from the Landau level fan plot, is very close to the theoretical value of 0.5 for the Dirac particles, confirming the presence of topological surface states in the Bi2Te3 single crystal. Using the Lifshitz–Kosevich analyses, the Fermi energy is estimated to be meV, which is lower than that of other bismuth-based topological systems. The detection of surface states in the Bi2Te3 crystal can be explained by our previous hypothesis of the lower position of the Fermi surface that cuts the ‘M’-shaped valence band maxima. As a result, the bulk state frequency is shifted to higher magnetic fields, which allows measurement of the surface states signal at low magnetic fields.

Synthesis, structural, thermal and optical properties of TeO2-Bi2O3-GeO2-Li2O glasses

Science.gov (United States)

Dimowa, Louiza; Piroeva, Iskra; Atanasova-Vladimirova, S.; Petrova, Nadia; Ganev, Valentin; Titorenkova, Rositsa; Yankov, Georgi; Petrov, Todor; Shivachev, Boris L.

2016-10-01

In this study, synthesis and characterization of novel quaternary tellurite glass system TeO2-Bi2O3-GeO2-Li2O is presented. The compositions include TeO2 and GeO2 as glass formers while different proportion of Bi2O3 and Li2O act as network modifiers. Differential thermal analysis, X-ray diffraction, scanning electron microscopy energy dispersive X-ray spectroscopy, laser ablation inductively coupled plasma mass spectrometry, UV-Vis and Raman spectroscopy are applied to study the structural, thermal and optical properties of the studied glasses. Obtained glasses possess a relatively low glass transition temperature (around 300 °C) if compared to other tellurite glasses, show good thermal transparency in the visible and near infra-red (from 2.4 to 0.4 μm) and can double the frequency of laser light from its original wavelength of 1064 nm to its second-harmonic at 532 nm (i.e. second harmonic generation).

Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

International Nuclear Information System (INIS)

Li Feihui; Huang Qinghua; Wang Wei

2009-01-01

The electrochemical reduction process of Bi 3+ , HTeO 2 + , Sb III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi 3+ , HTeO 2 + and Sb III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te 0 is formed firstly on the electrode surface through the electrochemical reduction of HTeO 2 + ; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi 3+ with Te 0 to form Bi 2 Te 3 takes place; when the cathodic polarizing potential is negative enough, Bi 3+ and Sb III react with Te 0 to form Bi 0.5 Sb 1.5 Te 3 . The results indicate that Bi 0.5 Sb 1.5 Te 3 films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.

Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

2015-11-02

The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

Thermoelectric properties of Bi2SexTe3-x prepared by Bridgman method

International Nuclear Information System (INIS)

Keawprak, N.; Lao-ubol, S.; Eamchotchawalit, C.; Sun, Z.M.

2011-01-01

Highlights: → Bi 2 Se x Te 3-x with various Se concentrations grown by Bridgman method was prepared. → The electrical conductivity was found to decrease with increasing Se content. → The Seebeck coefficient was not influenced by the substitution of Te with Se. → The electronic thermal conductivity exhibited a decrease with increasing Se. → The highest of dimensionless figure of merit (ZT) was measure to be 1.2. - Abstract: Bi 2 Se x Te 3-x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 x 10 5 S m -1 at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h -1 . The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K -1 at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m -1 K -1 at x = 0.36. The electronic part of κ, κ el , showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.

Influence of Ga-doping on the thermoelectric properties of Bi(2−xGaxTe2.7Se0.3 alloy

Directory of Open Access Journals (Sweden)

Xingkai Duan

2015-02-01

Full Text Available Bi(2−xGaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12 alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2−xGaxTe2.7Se0.3 (x=0.04 sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.

Improvement of thermoelectric properties of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films grown on graphene substrate

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Choi, Ji Woon; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2017-06-15

A study of substrate effect on the thermoelectric (TE) properties of Bi{sub 2}Te{sub 3} (BT) and Sb{sub 2}Te{sub 3} (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO{sub 2}/Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

Energy Technology Data Exchange (ETDEWEB)

Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Norimatsu, Katsura; Tsuruta, Tetsuya; Igarashi, Kyushiro; Kayanuma, Yosuke; Sasagawa, Takao; Nakamura, Kazutaka G. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Tanaka, Sei' ichi; Ishikawa, Tadahiko; Koshihara, Shin-ya [Department of Chemistry and Materials Science, Tokyo Institute of Technology, Tokyo 152-8551 (Japan); Keskin, Sercan [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Miller, R. J. Dwayne [The Max Planck Institute for the Structure and Dynamics of Matter, The Hamburg Centre for Ultrafast Imaging, University of Hamburg, Hamburg 22761 (Germany); Departments of Chemistry and Physics, University of Toronto, Toronto M5S 3H6 (Canada); Onda, Ken [PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012 (Japan); Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-07-14

The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

Constructing nanoporous carbon nanotubes/Bi2Te3 composite for synchronous regulation of the electrical and thermal performances

Science.gov (United States)

Zhang, Qihao; Xu, Leilei; Zhou, Zhenxing; Wang, Lianjun; Jiang, Wan; Chen, Lidong

2017-02-01

Porous nanograined thermoelectric materials exhibit low thermal conductivity due to scattering of phonons by pores, which are favorable for thermoelectric applications. However, the benefit is not large enough to overcome the deficiency in the electrical performance. Herein, an approach is presented to reduce the thermal conductivity and synchronously enhance the electrical conductivity through constructing a nanoporous thermoelectric composite. Carbon nanotubes (CNTs) are truncated and homogeneously dispersed within the Bi2Te3 matrix by a cryogenic grinding (CG) technique for the first time, which efficiently suppress the Bi2Te3 grain growth and create nanopores with the size ranging from dozens to hundreds of nanometers. The lattice thermal conductivity is substantially decreased by broad wavelength phonon scattering resulting from nanopores, increased grain boundaries, and newly formed interfaces. Meanwhile, the electrical conductivity is improved due to the enhanced carrier mobility, which may originate from the bridging effect between the Bi2Te3 grains and CNTs. The maximum ZT is improved by almost a factor of 2 due to the simultaneous optimization of electrical and thermal performances. Our study demonstrates the superiority of constructing a bulk thermoelectric composite with nanopores by the uniform dispersion of CNTs through a CG technique for enhanced thermoelectric properties, which provides a wider approach to thermoelectric nanostructure engineering.

Optical transitions of Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 glass.

Science.gov (United States)

Shen, Xiang; Nie, Qiuhua; Xu, Tiefeng; Gao, Yuan

2005-10-01

Optical absorption and emission properties of the Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 (TWB) glass has been investigated. The transition probabilities, excited state lifetimes, and the branching ratios have been predicted for Er3+ based on the Judd-Ofelt theory. The broad 1.5 microm fluorescence was observed under 970 nm excitation, and its full width at half maximum (FWHM) is 77 nm. The emission cross-section is calculated using the McCumber theory, and the peak emission cross-section is 1.03 x 10(-21) cm2 at 1.531 microm. This value is much larger than those of the silicate and phosphate glasses. Efficient green and weak red upconversion luminescence from Er3+ centers in the glass sample was observed at room temperature, and the upconversion excitation processes have been analyzed.

Synthesis and nonlinear optical property of polycrystalline MnTeMoO_6

International Nuclear Information System (INIS)

Jin, Chengguo

2017-01-01

Polycrystalline MnTeMoO_6 powder has been synthesized by a new approach that MnO_2 is used as the manganese source. The transformation mechanism of manganese ions in the new approach has been discussed. The nonlinear optical property of polycrystalline MnTeMoO_6 has been investigated, and compared with single-crystalline samples. The transformation Mn"4"+ → Mn"2"+ may be formed directly without stable intermediates, and TeO_2 may serve as catalyst. The SHG response of polycrystalline MnTeMoO_6 powder is worse than that of single-crystalline powder in the same particle size distribution as its pseudo-size. The results indicate that it should pay special attention with the pseudo-size of polycrystalline powder when the potential nonlinear optical materials are screened by powder second harmonic generation measurements. (orig.)

Effect of polarizable lone pair cations on the second-harmonic generation (SHG) properties of noncentrosymmetric (NCS) Bi(2-x)Y(x)TeO₅ (x = 0-0.2).

Science.gov (United States)

Jo, Hongil; Kim, Yeong Hun; Lee, Dong Woo; Ok, Kang Min

2014-08-14

Y(3+)-doped noncentrosymmetric (NCS) bismuth tellurite materials, Bi(2-x)Y(x)TeO5 (x = 0, 0.1, and 0.2), have been synthesized through standard solid-state reactions and structurally characterized by powder neutron diffraction. The reported NCS materials crystallize in the orthorhombic space group Abm2 (no. 39), and exhibit pseudo-three-dimensional frameworks that are composed of BiO3, BiO5, and TeO3 polyhedra. Detailed diffraction studies show that the cell volume of Bi(2-x)Y(x)TeO5 decreases with an increasing amount of Y(3+)on the Bi(3+) sites. However, no ordering between Bi(3+) and Y(3+) was observed in the Bi(2-x)Y(x)TeO5. Powder second-harmonic generation (SHG) measurements, using 1064 nm radiation, reveal that Bi2TeO5, Bi(1.9)Y(0.1)TeO5, and Bi(1.8)Y(0.2)TeO5 exhibit SHG efficiencies of approximately 300, 200, and 60 times that of α-SiO2, respectively. The reduction in SHG for Y(3+)-doped materials is consistent with the lack of net moment originating from polyhedra with a polarizable Bi(3+) cation.

Orientation distribution in Bi2Te3-based compound prepared by spark plasma sintering

International Nuclear Information System (INIS)

Kim, K.T.; Kim, Y.H.; Lim, C.H.; Cho, D.C.; Lee, Y.S.; Lee, C.H.

2005-01-01

P-type Bi 0.5 Sb 1.5 Te 3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders(P L ) and small powders(P S ). We could obtained the highest figure of merit(Z C ) of 2.89 x 10 -3 /K in sintered compound mixed to P L :P S =80:20. This resulted from the increase of orientation by large powders(P S ) and the reduce of pores by small powders. The figure of merit(Z C ) of the sintered compound using only small powders(P S ) showed lower value of 2.67 x 10 -3 /K compared with that of sintered compound mixed to P L :P S =80:20 due to the increase of electrical resistivity. (orig.)

Thickness dependent quantum oscillations of transport properties in topological insulator Bi{sub 2}Te{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N. [National Technical University “Kharkov Polytechnic Institute,” 21 Frunze St., Kharkov 61002 (Ukraine); Dresselhaus, M. S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

2015-02-02

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18−600 nm) of p-type topological insulator Bi{sub 2}Te{sub 3} thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18–100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi{sub 2}Te{sub 3} quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi{sub 2}Te{sub 3} and are inherent to topological insulators.

Hot pressing effect on (Bi 0.25 Sb 0.75 ) 2 Te 3 mechanical and ...

Indian Academy of Sciences (India)

Hot pressing effect on (Bi0.25Sb0.75)2Te3 mechanical and thermoelectric properties ... The crystal of this compound was prepared, pulverized in a particle size ratio of 64% ... microscopy and, for only once successful attempt, atomic force microscopy. The acquired images ensured to show homogeneous structures for hot ...

Biomolecule-Assisted Hydrothermal Synthesis and Self-Assembly of Bi2Te3 Nanostring-Cluster Hierarchical Structure

DEFF Research Database (Denmark)

Mi, Jianli; Lock, Nina; Sun, Ting

2010-01-01

A simple biomolecule-assisted hydrothermal approach has been developed for the fabrication of Bi2Te3 thermoelectric nanomaterials. The product has a nanostring-cluster hierarchical structure which is composed of ordered and aligned platelet-like crystals. The platelets are100 nm in diameter...

Synthesis, crystal structure, and properties of KSbO{sub 3}-type Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11}

Energy Technology Data Exchange (ETDEWEB)

Li Manrong; Retuerto, Maria; Bok Go, Yong; Emge, Thomas J. [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States); Croft, Mark; Ignatov, Alex [Department of Physics and Astronomy, Rutgers, State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854 (United States); Ramanujachary, Kandalam V. [Department of Chemistry and Biochemistry, Rowan University, 210 Mullica Hill Road, Glassboro, NJ 08028 (United States); Dachraoui, Walid; Hadermann, Joke [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Tang Meibo; Zhao Jingtai [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); Greenblatt, Martha, E-mail: martha@rutchem.rutgers.edu [Department of Chemistry and Chemical Biology, Rutgers, State University of New Jersey, 610 Taylor Road, Piscataway, NJ 08854 (United States)

2013-01-15

Single crystals of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} were prepared from NaCl+KCl flux. This compound adopts KSbO{sub 3}-type crystal structure as evidenced by electron and single crystal X-ray diffraction analysis. The three-dimensional channel structure is formed by corner-sharing octahedral (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} dimers and two identical (Bi1){sub 4}(Bi2){sub 2} interpenetrating lattices. The intra-dimer Mn/Te-Mn/Te distances in Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} are short and are consistent with weak metal-metal interactions. The mixed oxidation state of manganese and the edge-sharing octahedral features are confirmed by X-ray near edge absorption spectroscopy measurements, which indicate Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}. The partial substitution of Te for Mn perturbs long-range magnetic interactions, thereby destroying the ferromagnetic ordering found in Bi{sub 3}Mn{sub 3}O{sub 11} (T{sub C}=150 K). - Graphical abstract: Single crystal of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} was grown from NaCl+KCl binary flux, suggesting that the high pressure Bi{sub 3}Mn{sub 3}O{sub 11} phase can be stabilized by partial substitution of Mn by Te at ambient pressure. Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} adopts a typical three dimensional KSbO{sub 3}-type crystal structure with three interpenetrating lattices and weak intra-dimmer metal-metal interaction caused by the d electrons of Mn. The edge-shared (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} octahedral dimer and mixed oxidation state of manganese (Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}) features were evidenced by X-ray absorption near edge spectroscopy. Compared with Bi{sub 3}Mn{sub 3}O{sub 11}, the Te substituted Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} relaxes the crystal structure, but destroys the long

Partial enthalpies of Bi and Te in Bi-Te melts and of In and Te in In-Te melts

International Nuclear Information System (INIS)

Yassin, Abeer; Amzil, Abdelhamid; Castanet, Robert

2000-01-01

Full text.Calorimetric measurement are reported which allow the enthalpic behaviour of Bi-Te melts to be established. Further work is required, however, to supplement results obtained for In-Te melts. The partial enthalpies of bismuth and tellurium in the Bi-Te melts at 755K and those of indium and tellurium in the In-Te melts at 1010 and 987K were measured at high dilution by direct reaction calorimetry (drop method) with the help of a Tian-Calvet calorimeter. The limiting partial enthalpies of the components were deduced by extrapolation at infinite dilution: Δh f,∞ B i(755K)/KJ.mol -1 = -34.0 and Δh f,∞ Te(755K) /KJ·mol -1 = -24.1 in the Bi-Te melts Δh f,∞ In(1010K) /KJ·mol -1 = -75.9 and Δh f,∞ Te(1010K) /KJ·mol -1 = -47.8 in the In-Te melts Δh f,∞ In(987K) /KJ·mol -1 = -75.2 and Δh f,∞ Te(987K) /KJ·mol -1 = -48.0 in the In-Te melts

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Science.gov (United States)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Tolerance of topological surface state towards adsorbed magnetic moments: Fe on Bi{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Scholz, Markus; Marchenko, Dmitry; Sanchez-Barriga, Jaime; Varykhalov, Andrei; Rader, Oliver [Helmholtz-Zentrum fuer Materialien und Energie, Berlin (Germany); Volykhov, Andrei; Yashina, Lada [Moscow State University, Moskau, Russland (Russian Federation)

2011-07-01

Topological surface states on Bi{sub 2}Se{sub 3} and Bi{sub 2}Te{sub 3} are protected by time reversal symmetry. Magnetic fields break time-reversal symmetry, and they have been used in two-dimensional spin quantum-Hall systems to destroy the topological edge states. Another possibility is to introduce magnetic moments. This has been done by substitution of Mn and Fe into the bulk. For Fe a small gap of 44meV was created, however, at very large amounts (12%). In this work, we deposit Fe directly onto the surface where the topological surface state is localized. We show for coverages of 0.25 and 1 ML Fe that the Dirac point remains intact and no gap appears. Core level spectroscopy of Bi and Te states gives insight into the interaction between substrate and adatoms. In addition, extra surface states appear at the Fermi energy which show a large Rashba-type spin-orbit splitting. The orientation of the spin of both, the topological as well as the Rashba-type split surface states is analysed.

The microstructure and coefficient transmission of think films Bi2Te3-xSex, alloyed by terbium

International Nuclear Information System (INIS)

Abdullaev, N.M.; Mekhtieva, S.I.; Jalilov, N.Z.; Memmedov, N.R.; Zeynalov, V.Z.

2007-01-01

The defects of films microstructures of the thermoelectric materials n- and p-type Bi 2 Te 3 -xSe x , alloyed by Tb and Cl, with think, obtained by thermic evaporation in vacuum have been investigated by microscopic methods

High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target

International Nuclear Information System (INIS)

Walachova, J.; Zeipl, R.; Zelinka, J.; Malina, V.; Pavelka, M.; Jelinek, M.; Studnicka, V.; Lost'ak, P.

2005-01-01

The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric layers are prepared at different conditions by laser ablation from Bi 2 Te 3 target. The best measured figure of merit ZT is for our devices ZT=2.65. This result is comparable with the results obtained on superlattices. ZT oscillated with the thickness of the layers. On some devices the Seebeck coefficient is measured and using conductivity measurements along the thermoelectric layers the thermal conductivity is estimated from ZT. The low thermal conductivity of samples is explained by the quantum size effect and by existence of few phases of type Bi 2(m+n) Te 3n in the thermoelectric layers

A Micro-Raman Study of Exfoliated Few-Layered n-Type Bi2Te2.7Se0.3 (Postprint)

Science.gov (United States)

2017-11-28

is feasible because the Bi-Te1 bond strength is the strongest bond in the quintuple20. In addition, the Te2 atom is known to lie at the inversion ...ii) mitigation of the bipolar effect in thermopower, and iii) a simultaneous reduction in the thermal conductivity, that led to the broadening of the...or Se-dopant at the Te sites (Te1 and Te2), where Te2 is the inversion center of the crystal symmetry (see Supplementary Fig. S1)33. As Se is

Synthesis and nonlinear optical property of polycrystalline MnTeMoO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Jin, Chengguo [Yibin University, Key Laboratory of Computational Physics of Sichuan Province, Yibin (China); Yibin University, School of Physics and Electronic Engineering, Yibin (China)

2017-04-15

Polycrystalline MnTeMoO{sub 6} powder has been synthesized by a new approach that MnO{sub 2} is used as the manganese source. The transformation mechanism of manganese ions in the new approach has been discussed. The nonlinear optical property of polycrystalline MnTeMoO{sub 6} has been investigated, and compared with single-crystalline samples. The transformation Mn{sup 4+} → Mn{sup 2+} may be formed directly without stable intermediates, and TeO{sub 2} may serve as catalyst. The SHG response of polycrystalline MnTeMoO{sub 6} powder is worse than that of single-crystalline powder in the same particle size distribution as its pseudo-size. The results indicate that it should pay special attention with the pseudo-size of polycrystalline powder when the potential nonlinear optical materials are screened by powder second harmonic generation measurements. (orig.)

Fabrication and Characterization of Bi2Te3-Based Chip-Scale Thermoelectric Energy Harvesting Devices

Science.gov (United States)

Cornett, Jane; Chen, Baoxing; Haidar, Samer; Berney, Helen; McGuinness, Pat; Lane, Bill; Gao, Yuan; He, Yifan; Sun, Nian; Dunham, Marc; Asheghi, Mehdi; Goodson, Ken; Yuan, Yi; Najafi, Khalil

2017-05-01

Thermoelectric energy harvesters convert otherwise wasted heat into electrical energy. As a result, they have the potential to play a critical role in the autonomous wireless sensor network signal chain. In this paper, we present work carried out on the development of Bi2Te3-based thermoelectric chip-scale energy harvesting devices. Process flow, device demonstration and characterization are highlighted.

Propiedades mecánicas del telururo de bismuto (Bi2Te3 procesado mediante torsión bajo alta presión (HPT

Directory of Open Access Journals (Sweden)

Santamaría, Jon Ander

2013-06-01

Full Text Available Bismuth telluride, Bi2Te3, is the main thermoelectric material currently in use for commercial cooling devices or for energy harvesting near room temperature. Because of its highly anisotropic layered structure, Bi2Te3 is very brittle, failing by cleavage along its basal plane. Refining its grain size is expected to increase its toughness with the advantage that, simultaneously, its thermoelectric “figure of merit” results increased. In this work, powders of the compound have been compacted by conventional methods as well as by severe plastic deformation under high pressure (3 GPa using high pressure torsion (HPT, one turn at room temperature. Near-theoretical density has been achieved. The hardness and toughness of the compacts have been assessed by micro and nano-indentation.Actualmente el telururo de bismuto (Bi2Te3 es el material termoeléctrico más ampliamente usado en sistemas de refrigeración comerciales o en la conversión de energía en torno a temperatura ambiente. Debido a su estructura laminar altamente anisótropa, el Bi2Te3 es muy frágil y suele agrietarse fácilmente a lo largo de su plano basal. Se espera que el afino del tamaño de grano incremente su tenacidad, con la ventaja de que al mismo tiempo la figura de mérito termoeléctrica se vea incrementada. En este trabajo, polvos del compuesto Bi2Te3 se han compactado mediante dos métodos convencionales y mediante deformación plástica severa bajo alta presión (3 GPa usando la técnica HPT (torsión a alta presión, 1 giro de deformación. Se ha conseguido una densidad cercana a la teórica. La dureza y tenacidad de los compuestos se han ensayado mediante micro- y nano- indentación.

Polycrystalline and Mesoporous 3-D Bi2O3 Nanostructured Negatrodes for High-Energy and Power-Asymmetric Supercapacitors: Superfast Room-Temperature Direct Wet Chemical Growth.

Science.gov (United States)

Shinde, Nanasaheb M; Xia, Qi Xun; Yun, Je Moon; Mane, Rajaram S; Kim, Kwang Ho

2018-04-04

Superfast (≤10 min) room-temperature (300 K) chemical synthesis of three-dimensional (3-D) polycrystalline and mesoporous bismuth(III) oxide (Bi 2 O 3 ) nanostructured negatrode (as an abbreviation of negative electrode) materials, viz., coconut shell, marigold, honey nest cross section and rose with different surface areas, charge transfer resistances, and electrochemical performances essential for energy storage, harvesting, and even catalysis devices, are directly grown onto Ni foam without and with poly(ethylene glycol), ethylene glycol, and ammonium fluoride surfactants, respectively. Smaller diffusion lengths, caused by the involvement of irregular crevices, allow electrolyte ions to infiltrate deeply, increasing the utility of inner active sites for the following electrochemical performance. A marigold 3-D Bi 2 O 3 electrode of 58 m 2 ·g -1 surface area has demonstrated a specific capacitance of 447 F·g -1 at 2 A·g -1 and chemical stability of 85% even after 5000 redox cycles at 10 A·g -1 in a 6 M KOH electrolyte solution, which were higher than those of other morphology negatrode materials. An asymmetric supercapacitor (AS) device assembled with marigold Bi 2 O 3 negatrode and manganese(II) carbonate quantum dots/nickel hydrogen-manganese(II)-carbonate (MnCO 3 QDs/NiH-Mn-CO 3 ) positrode corroborates as high as 51 Wh·kg -1 energy at 1500 W·kg -1 power and nearly 81% cycling stability even after 5000 cycles. The obtained results were comparable or superior to the values reported previously for other Bi 2 O 3 morphologies. This AS assembly glowed a red-light-emitting diode for 20 min, demonstrating the scientific and industrial credentials of the developed superfast Bi 2 O 3 nanostructured negatrodes in assembling various energy storage devices.

Hot pressing effect on (Bi0⋅25Sb0⋅75)2Te3 mechanical and ...

Indian Academy of Sciences (India)

Administrator

Abstract. (Bi0⋅25Sb0⋅75)2Te3 thermoelectric material is a well known p type of compound that has higher fig- ... The crystal of this compound was prepared, pulverized in a particle .... ing fracture surfaces of the materials as shown in figures.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Science.gov (United States)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Science.gov (United States)

Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

2015-06-01

N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

International Nuclear Information System (INIS)

Patel, S.S.; Patel, B.H.; Patel, T.S.

2008-01-01

An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Preparation and physical properties of polycrystalline (Bi1-xPbx)2Sr2Ca2Cu3Oy high Tc superconductors

International Nuclear Information System (INIS)

Awan, M.S.; Maqsood, M.; Mirza, S.A.; Yousaf, M.; Maqsood, A.

1995-01-01

(Bi 1-x Pb x ) 2 Sr 2 Ca 2 Cu 3 O y (x = 0.3) high critical transition temperature (T c ) superconductors are synthesized by the solid-state reaction method in polycrystalline form. X-ray diffraction (XRD) studies, direct current (dc) electrical resistivity measurements, scanning electron microscopic (SEM) studies, critical current density measurements and zero-field alternating current (ac) susceptibility measurements are performed to investigate the physical changes, structural changes, and magnetic behavior of the superconducting samples. X-ray diffraction studies show that a high T c phase exists with orthorhombic symmetry in the specimen. According to the XRD data, the lattice parameters of the high T c phase were determined as a = 0.537(1) nm, b = 0.539(1) nm, and c = 3.70(1) nm. The compound exhibits a superconducting transition at 106 ± 1 K for zero resistance. The ac susceptibility measurements in zero field confirm the dc electrical resistivity results; hence both support the XRD results. The particle size and structural changes as a function of the cold-pressing and aging effect are also reported

Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

Science.gov (United States)

Concepción, O.; Escobosa, A.; de Melo, O.

2018-03-01

Bismuth telluride (Bi2Te3), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi2Te3 by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.

Preparation and optimization of thermoelectric properties of Bi2Te3 based alloys using the waste particles as raw materials from the cutting process of the zone melting crystal rods

Science.gov (United States)

Xiang, Qiusheng; Fan, Xi'an; Han, Xuewu; Zhang, Chengcheng; Hu, Jie; Feng, Bo; Jiang, Chengpeng; Li, Guangqiang; Li, Yawei; He, Zhu

2017-12-01

The p-type Bi2Te3 alloys were prepared using the waste particles from the cutting process of the zone melting crystal rods as the main raw materials by impurity removal process including washing, carbon monoxide reduction and vacuum metallurgical process. The thermoelectric properties of the Bi2Te3 based bulk materials were optimized by component adjustment, second smelting and resistance pressing sintering (RPS) process. All evidences confirmed that most of impurities from the line cutting process and the oxidation such as Sb2O3, Bi2O3 and Bi2Te4O11 could be removed by carbon monoxide reduction and vacuum metallurgical process adopted in this work, and the recycling yield was higher than 97%. Appropriate component adjustment treatment was used to optimize the carrier content and corresponding thermoelectric properties. Lastly, a Bi0.36Sb1.64Te3 bulk was obtained and its power factor (PF) could reach 4.24 mW m-1 K-2 at 300 K and the average PF value was over 3.2 mW m-1 K-2 from 300 K to 470 K, which was equivalent with the thermoelectric performance of the zone melting products from high purity elements Bi, Te and Sb. It was worth mentioning that the recovery process introduced here was a simple, low-cost, high recovery rate and green recycling technology.

3D printing of shape-conformable thermoelectric materials using all-inorganic Bi2Te3-based inks

Science.gov (United States)

Kim, Fredrick; Kwon, Beomjin; Eom, Youngho; Lee, Ji Eun; Park, Sangmin; Jo, Seungki; Park, Sung Hoon; Kim, Bong-Seo; Im, Hye Jin; Lee, Min Ho; Min, Tae Sik; Kim, Kyung Tae; Chae, Han Gi; King, William P.; Son, Jae Sung

2018-04-01

Thermoelectric energy conversion offers a unique solution for generating electricity from waste heat. However, despite recent improvements in the efficiency of thermoelectric materials, the widespread application of thermoelectric generators has been hampered by challenges in fabricating thermoelectric materials with appropriate dimensions to perfectly fit heat sources. Herein, we report an extrusion-based three-dimensional printing method to produce thermoelectric materials with geometries suitable for heat sources. All-inorganic viscoelastic inks were synthesized using Sb2Te3 chalcogenidometallate ions as inorganic binders for Bi2Te3-based particles. Three-dimensional printed materials with various geometries showed homogenous thermoelectric properties, and their dimensionless figure-of-merit values of 0.9 (p-type) and 0.6 (n-type) were comparable to the bulk values. Conformal cylindrical thermoelectric generators made of 3D-printed half rings mounted on an alumina pipe were studied both experimentally and computationally. Simulations show that the power output of the conformal, shape-optimized generator is higher than that of conventional planar generators.

CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

International Nuclear Information System (INIS)

Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

2015-01-01

Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

Dispersion and guidance characteristics of microstructured 68TeO2 - 22WO3 - 8La2O3 - 2Bi2O3 glass fibres for supercontinuum generation

International Nuclear Information System (INIS)

Yatsenko, Yu P; Nazaryants, V O; Kosolapov, A F; Astapovich, M S; Plotnichenko, V G; Dianov, Evgenii M; Moiseev, A N; Churbanov, M F; Dorofeev, V V; Chilyasov, A V; Snopatin, G E

2010-01-01

We report the preparation of a high-purity optical-quality four-component glass of composition 68TeO 2 - 22WO 3 - 8La 2 O 3 - 2Bi 2 O 3 , containing (2.7±0.5)x10 -5 mol % OH groups. Its refractive index has been determined in the range 0.9 - 5.45 μm using interference refractometry. The data are used to assess the dispersion and guidance characteristics of microstructured optical fibres potentially attractive for supercontinuum generation in the range 1 - 5 μm (optical fibres)

Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

Science.gov (United States)

Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

2017-04-01

The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Kulbachinskii, V A; Negishi, H; Sasaki, M; Giman, Y; Inoue, M

1997-07-01

Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} (0 < x < 0.03) singlecrystals have been measured in the temperature range 4.2--300K. By doping of Sn atoms into the host Bi{sub 2}Te{sub 3} lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30--150K for x {le} 0,0075. The activation type behavior of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.

Evolution of MoTeO x/SiO 2 and MoBiTeO x/SiO 2 catalysts in the partial oxidation of propane to acrolein

Science.gov (United States)

He, Yiming; Wu, Ying

2010-04-01

A thorough investigation of the catalysts Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 in the partial oxidation of propane is presented in this paper, in order to elucidate the nature and behavior of the active surface. The catalysts' structures and redox properties were investigated by means of X-ray powder diffraction, Raman spectroscopy, in situ Raman spectroscopy, X-ray photoelectron spectroscopy, and H 2-TPR techniques. The results indicate that Te-polymolybdate is the main active phase on fresh catalysts. During reaction, the catalysts underwent a progressive reduction, resulting in the reconstruction of the active surface and the formation of a MoO 3 phase. The synergistic effect between Te-polymolybdate and MoO 3 was assumed to promote catalytic performance. The different stabilities of Mo 1Te 1O x/SiO 2 and Mo 1Bi 0.05Te 1O x/SiO 2 catalysts are also discussed.

Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

Science.gov (United States)

Chi, Hang; Uher, Ctirad

2014-03-01

At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

High Curie temperature Bi(1.85)Mn(0.15)Te3 nanoplates.

Science.gov (United States)

Cheng, Lina; Chen, Zhi-Gang; Ma, Song; Zhang, Zhi-dong; Wang, Yong; Xu, Hong-Yi; Yang, Lei; Han, Guang; Jack, Kevin; Lu, Gaoqing Max; Zou, Jin

2012-11-21

Bi(1.85)Mn(0.15)Te(3) hexagonal nanoplates with a width of ~200 nm and a thickness of ~20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Mn(2+) and Mn(3+) ions were found to substitute Bi(3+) ions in the lattice. High-level Mn doping induces significant lattice distortion and decreases the crystal lattice by 1.07% in the a axis and 3.18% in the c axis. A high ferromagnetic state with a Curie temperature of ~45 K is observed in these nanoplates due to Mn(2+) and Mn(3+) ion doping, which is a significant progress in the field of electronics and spintronics.

High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

2012-09-15

The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

Electrochemically deposited BiTe-based nano wires for thermoelectric applications

International Nuclear Information System (INIS)

Inn-Khuan, N.; Kuan-Ying, K.; Che Zuraini Che Abdul Rahman; Nur Ubaidah Saidin; Suhaila Hani Ilias; Thye-Foo, C.

2013-01-01

Full-text: Nano structured materials systems such as thin-films and nano wires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nano wires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nano wires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltametry (LSV). Chemical compositions of the nano wires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nano wires indicated that while the Sb content in BiSbTe nano wires increased with more negative deposition potentials, the formation of Te 0 and Bi 2 Te 3 were favorable at more positive potentials. (author)

Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

Energy Technology Data Exchange (ETDEWEB)

Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

2014-07-15

Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigations on electrical, magnetic and optical behaviors of five-layered Aurivillius Bi6Ti3Fe2O18 polycrystalline films

International Nuclear Information System (INIS)

Bai, W.; Xu, W.F.; Wu, J.; Zhu, J.Y.; Chen, G.; Yang, J.; Lin, T.; Meng, X.J.; Tang, X.D.; Chu, J.H.

2012-01-01

Five-layered Aurivillius Bi 6 Ti 3 Fe 2 O 18 (BTF2) polycrystalline thin films were prepared by a chemical solution deposition route. The crystalline structures and microstructures were characterized by X-ray diffractometer, micro-Raman spectrometer and atomic force microscopy. Its electrical and magnetic properties were investigated, and especially optical properties were addressed in detail. Coexistence of the ferroelectric and weak ferromagnetic properties indicated the multiferroic behavior of the BTF2 films. The optical dielectric functions in the photon energy range of 1.13–4.13 eV have been extracted by fitting the experimental data in the light of the Tauc–Lorentz dispersion model. A direct interband transition with bandgap energy ∼ 3.72 eV was determined for the BTF2 films. The weak absorption below band-gap edge was explained by the Urbach band tail rule. Finally, the optical dispersion behaviors of the BTF2 films in the transparent oscillating region were described using a single oscillator model. - Highlights: ► Five-layered Aurivillius Bi 6 Ti 3 Fe 2 O 18 (BTF2) thin films were prepared. ► Electrical and magnetic properties of the BTF2 films were investigated. ► Optical properties of the BTF2 films were especially addressed in detail.

Thermoelectric Transport Properties of Cu Nanoprecipitates Embedded Bi2Te2.7Se0.3

Directory of Open Access Journals (Sweden)

Eunsil Lee

2015-01-01

Full Text Available We suggest a simple and scalable synthesis to prepare Cu-Bi2Te2.7Se0.3 (Cu-BTS nanocomposites. By precipitating Cu nanoparticle (NP in colloidal suspension of as-exfoliated BTS, homogeneous mixtures of Cu NP and BTS nanosheet were readily achieved, and then the sintered nanocomposites were fabricated by spark plasma sintering technique using the mixed powder as a raw material. The precipitated Cu NPs in the BTS matrix effectively generated nanograin (BTS and heterointerface (Cu/BTS structures. The maximum ZT of 0.90 at 400 K, which is 15% higher compared to that of pristine BTS, was obtained in 3 vol% Cu-BTS nanocomposite. The enhancement of ZT resulted from improved power factor by carrier filtering effect due to the Cu nanoprecipitates in the BTS matrix.

The microstructure network and thermoelectric properties of bulk (Bi,Sb)2Te3

DEFF Research Database (Denmark)

Xie, Wenjie; Hitchcock, Dale A.; Kang, Hye J.

2012-01-01

We report small-angle neutron scattering studies on the microstructure network in bulk (Bi,Sb)(2)Te-3 synthesized by the melt-spinning (MS) and the spark-plasma-sintering (SPS) process. We find that rough interfaces of multiscale microstructures generated by the MS are responsible for the large...... reduction of both lattice thermal conductivity and electrical conductivity. Our study also finds that subsequent SPS forms a microstructure network of similar to 10 nm thick lamellae and smooth interfaces between them. This nanoscale microstructure network with smooth interfaces increases electrical...... conductivity while keeping a low thermal conductivity, making it an ideal microstructure for high thermoelectric efficiency....

Intense upconversion luminescence and effect of local environment for Tm3+/Yb3+ co-doped novel TeO2-BiCl3 glass system.

Science.gov (United States)

Wang, Guonian; Dai, Shixun; Zhang, Junjie; Wen, Lei; Yang, Jianhu; Jiang, Zhonghong

2006-05-15

We present the results of a study that uses theoretical and experimental methods to investigate the characteristics of the upconversion luminescence of Tm3+/Yb3+ codoped TeO2-BiCl3 glass system as a function of the BiCl3 fraction. These glasses are potentially important in the design of upconversion fiber lasers. Effect of local environment around Tm3+ on upconversion fluorescence intensity was analyzed by theoretical calculations. The structure and spectroscopic properties were investigated in the experiments by measuring the Raman spectra, IR transmission spectra, and absorption and fluorescence intensities at room temperature. The results indicate that blue luminescence quantum efficiency increases with increasing BiCl3 content from 10 to 60 mol%, which were interpreted by the increase of asymmetry of glass structure, decrease of phonon energy and removing of OH- groups.

Equilibrium state of delta-phase with tellurium in the Sb-Bi-Te system

International Nuclear Information System (INIS)

Gajgukova, V.S.; Dudkin, L.D.; Erofeev, R.S.; Musaelyan, V.V.; Nadzhip, A.Eh.; Sokolov, O.B.

1978-01-01

A research has been carried out with a view to establish the equilibrium state of delta-phase of the composition (Sbsub(1-x)Bisub(x)) 2 Te 3 with tellurium, depending on x and temperature. The Hall effect, the thermoelectromotive force, and the electric conductivity of the samples of Sb-Bi-Te alloys have been measured, the samples being annealed at various temperatures (550 to 250 deg C). The measurement results have shown that as the Bi 2 Te 3 content in the solid solutions increases and temperature decreases, the delta-phase-Te boundary monotonously approaches the stoichiometric composition. Using the research carrid out as the basis, the general character of the equilibrium delta-phase with tellurium boundary has been rendered more precise in Sb-Bi-Te system, depending on the temperature and Bi content (up to 25 at.%)

Development of Bi-Sb-Te ternary alloy with compositionally graded structure

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, A; Ohta, T

1997-07-01

Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

Heat Treatment Effect on Eu3+ Doped TeO2-BaO-Bi2O3 Glass Systems with Ag Nanoparticles

Directory of Open Access Journals (Sweden)

Tomasz Lewandowski

2017-01-01

Full Text Available Glass systems of 73TeO2-4BaO-3Bi2O3-2Eu2O3-xAg (in molar ratio where x = 0, 1, 2, and 3 compositions have been successfully synthesized. Silver nanoparticles were obtained with the employment of heat treatment (HT procedure executed at 350°C. Glass transition temperatures of different compositions have been determined through DSC measurements. XRD results presented characteristic amorphous halo indicating lack of long range order in the samples. FTIR structural studies revealed that glass matrix is mainly composed of TeO3 and TeO4 species and is stable after different applied heat treatment times. X-ray photoelectron spectroscopy (XPS measurements confirmed that in selected samples part of Ag ions changed oxidation state to form Ag0 species. TEM measurements revealed nanoparticles of size in the range of 20–40 nm. UV-vis absorption results demonstrated characteristic transitions of Eu3+ ions. Additionally, UV-vis spectra of samples heat-treated for 6, 12, 24, and 48 hours presented bands related to silver nanoparticles. Photoluminescence (PL studies have been performed with excitation wavelength of λexc=395 nm. Obtained spectra exhibited peaks due to 5D0-7FJ (where J=2,3,4 and 5D1-7FJ (where J=1,2,3 transitions of Eu3+. Moreover, luminescence measurement indicated enhancement of rare earth ions emissions in several of the annealed samples. Increase of emission intensity of about 35% has been observed.

Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

KAUST Repository

Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed

2018-01-01

Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X

Microscopic effects of Dy doping in the topological insulator Bi2Te3

Science.gov (United States)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

Institute of Scientific and Technical Information of China (English)

无

2002-01-01

The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

Rashba split surface states in BiTeBr

International Nuclear Information System (INIS)

Eremeev, S V; Rusinov, I P; Nechaev, I A; Chulkov, E V

2013-01-01

Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin–orbit splitting. The Te-terminated surface-state spin splitting has Rashba-type behavior with the coupling parameter α R ∼ 2 eVÅ. (paper)

Magneto-transport studies on Bi2Te2+xSe1–x (x = 0.05 and 0.10 topological insulators

Directory of Open Access Journals (Sweden)

Bushra Irfan

2016-09-01

Full Text Available Bi2Te2Se is one of the most promising three dimensional topological insulators, for the study of surface states. In this work, we report the results of transport and magneto-transport behavior of Bi2Te2+xSe1–x (x=0.05 and 0.10 single crystals grown using modified Bridgeman technique. Resistance versus temperature measurements show semiconducting behavior for x = 0.05 and 0.10 crystals. Linear magnetoresistance is observed for Bi2Te2.05Se0.95 (i.e. x=0.05 whereas, Bi2Te2.10Se0.90 (x=0.10 single crystal shows a conductance fluctuations at low magnetic field.

Improvement of thermoelectric properties induced by uniquely ordered lattice field in Bi2Se0.5Te2.5 pillar array

International Nuclear Information System (INIS)

Tan, Ming; Hao, Yanming; Wang, Gangzhi

2014-01-01

In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The n-Bi 2 Se 0.5 Te 2.5 pillar array film was successfully achieved by a simple ion beam assisted deposition technique. This oriented pillar array structure is clear with pillar diameter of about 30 nm, exhibiting a uniquely ordered lattice field. The properties of the ordered Bi 2 Se 0.5 Te 2.5 pillar array were greatly enhanced in comparison with those of the ordinary film. The Bi 2 Se 0.5 Te 2.5 pillar array with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 film. Introduction of such ordered lattice field into TE films is therefore a very promising approach. - Graphical abstract: In this study, it was found that uniquely ordered lattice field favors transport of carriers but hinder that of phonons. The Bi 2 Se 0.5 Te 2.5 pillar array film with a thermoelectric dimensionless figure-of-merit ZT=1.28 was obtained at room temperature. The in-plane transport mechanisms of the ordered pillar array and the ordinary structures, the lattice field model, are proposed and investigated. The specially ordered lattice field is the main reason for the properties enhancement observed in the Bi 2 Se 0.5 Te 2.5 pillar array. Introduction of such uniquely ordered lattice field into TE films is therefore a very promising approach. In (a) TEM and (b) HRTEM images of the ordered Bi 2 Se 0.5 Te 2.5 column array. - Highlights: • Uniquely ordered Bi 2 Se 0.5 Te 2.5 pillar array was achieved by an IBAD method. • The pillar array with an ordered lattice field exhibits attractive TE property. • The transport mechanism of such ordered pillar array is proposed and

Reduction in thermal conductivity of BiSbTe lump

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

2017-03-15

In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Directory of Open Access Journals (Sweden)

Feng Hao

2017-03-01

Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

Science.gov (United States)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

The quadrupole interaction of 125Te and 129I in polycrystalline Te and in Te single crystals

International Nuclear Information System (INIS)

Langouche, G.; Rossum, M. van; Schmidt, K.P.; Coussement, R.

1975-01-01

Single crystals as hosts for Te and I sources were used in a study of Te. The Moessbauer spectra of 125 Te and 129 I in polycrystalline Te at liquid He temperature are given. Also presented are the Moessbauer spectra of 125 Te in a Te single crystal for the gamma ray parallel to the c-axis and perpendicular to the c-axis of the crystal at liquid He temperature. (Z.S.)

Investigation of the Microstructural and Thermoelectric Properties of the (GeTe0.95(Bi2Te30.05 Composition for Thermoelectric Power Generation Applications

Directory of Open Access Journals (Sweden)

Lior Weintraub

2014-01-01

Full Text Available In the frame of the current research, the p-type Bi2Te3 doped (GeTe0.95(Bi2Te30.05 alloy composed of hot pressed consolidated submicron structured powder was investigated. The influence of the process parameters (i.e., powder particles size and hot pressing conditions on both reduction of the lattice thermal conductivity and electronic optimization is described in detail. Very high maximal ZT values of up to ∼1.6 were obtained and correlated to the microstructural characteristics. Based on the various involved mechanisms, a potential route for further enhancement of the ZT values of the investigated composition is proposed.

Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)

International Nuclear Information System (INIS)

Guha Thakurta, S.R.; Dutta, A.K.

1977-01-01

Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)

Electronic tuning of the transport properties of off-stoichiometric PbxSn1−xTe thermoelectric alloys by Bi2Te3 doping

International Nuclear Information System (INIS)

Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

2015-01-01

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb x Sn 1−x Te alloys by tuning of Bi 2 Te 3 doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb 0.5 Sn 0.5 Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected

Optical spectroscopy and Fermi surface studies of BiTeCl and BiTeBr

Science.gov (United States)

Martin, Catalin; Suslov, A. V.; Buvaev, S.; Hebard, A. F.; Bugnon, Philippe; Berger, Helmuth; Magrez, Arnaud; Tanner, D. B.

2014-03-01

The observation of a large bulk Rashba effect in the non-centrosymmetric semiconductors BiTeX(X=Cl, Br, I) has stimulated the interest in these sys- tems, as promising candidates for studying spin related phenomena and for the realization of spin devices. Here we present a comparative study of the electronic properties of BiTeCl and BiTeBr, determined from temperature dependent infrared spectroscopy and Shubnikov-de Haas oscillations. In par- ticular, we compare the angle dependence of quantum oscillations between the two compounds and discuss possible differences between the topology of their Fermi surfaces. Supported by NSF Cooperative Agreement DMR-1157490 to the National High Magnetic Field Laboratory.

Study of Ho-doped Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Harrison, S. E. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Collins-McIntyre, L. J.; Zhang, S. L.; Chen, Y. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Kellock, A. J.; Pushp, A.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Harris, J. S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-11-02

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi{sub 2}Te{sub 3} thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μ{sub B}/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

The effects of Zn doping on magnetic properties of Cu3Bi(SeO3)2O2Cl

Science.gov (United States)

Yang, Pei-Ying; Tseng, Wu-Jyun; Wu, Hung-Cheng; Kakarla, D. Chandrasekhar; Yang, Hung-Duen; Department of Physics, Natl Sun Yat Sen Univ Team

Recently, layered spin-frustrated Cu3Bi(SeO3)2 O2Cl has received considerable research attention due to its unusual magnetic properties. Two inequivalent Cu2 + ions form a pseudo-kagome lattice that invokes spin frustration and anisotropic magnetic properties. In this study, the influence of Zn doping on the complex magnetic properties has been explored. Polycrystalline (Cu1-xZnx) Bi(SeO3)2 O2Cl (0 x 0.5) samples were synthesized using solid-state reaction and characterized by X-ray diffraction and magnetic measurements. The Zn doping strongly modulates the magnetic ground state of the system. The antiferromagnetic transition temperature TN = 24 K and magnetic field-induced hysteresis observed for x = 0 at low field are systematically shifted to lower temperature and reduced with Zn doping. These results can illustrate the insight of the occurrence of field-induced spin-flip type multiferroics in Cu3Bi(SeO3)2 O2Cl.

Raman Spectroscopy of Two-Dimensional Bi2TexSe3 − x Platelets Produced by Solvothermal Method

Directory of Open Access Journals (Sweden)

Jian Yuan

2015-08-01

Full Text Available In this paper, we report a facile solvothermal method to produce both binary and ternary compounds of bismuth chalcogenides in the form of Bi2TexSe3 − x. The crystal morphology in terms of geometry and thickness as well as the stoichiometric ratio can be well controlled, which offers the opportunities to systematically investigate the relationship between microstructure and phonon scattering by Raman spectroscopy. Raman spectra of four compounds, i.e., Bi2Se3, Bi2Se2Te, Bi2SeTe2 and Bi2Te3, were collected at four different excitation photon energies (2.54, 2.41, 1.96, and 1.58 eV. It is found that the vibrational modes are shifted to higher frequency with more Se incorporation towards the replacement of Te. The dependence of Raman vibrational modes on excitation photon energy was investigated. As the excitation photon energy increases, three Raman vibrational modes (A1g1, Eg2 and A1g2 of the as-produced compounds move to low frequency. Three Infrared-active (IR-active modes were observed in thin topological insulators (TIs crystals.

Hypothetical planar and nanotubular crystalline structures with five interatomic bonds of Kepler nets type

Directory of Open Access Journals (Sweden)

Aleksey I. Kochaev

2017-02-01

Full Text Available The possibility of metastable existence of planar and non-chiral nanotubular crystalline lattices in the form of Kepler nets of 34324, 3342, and 346 types (the notations are given in Schläfly symbols, using ab initio calculations, has researched. Atoms of P, As, Sb, Bi from 15th group and atoms of S, Se, Te from 16th group of the periodic table were taken into consideration. The lengths of interatomic bonds corresponding to the steadiest states for such were determined. We found that among these new composed structures crystals encountered strong elastic properties. Besides, some of them can possess pyroelectric and piezoelectric properties. Our results can be used for nanoelectronics and nanoelectromechanical devices designing.

High-pressure studies of superconductivity in BiO0. 75F0. 25BiS2

Indian Academy of Sciences (India)

). We have investigated the effect of pressure on magnetization measurements. Our studies suggest improved superconducting properties in polycrystalline samples of BiO 0.75 F 0.25 BiS 2 . The Tc in our sample is 5.3 K, at ambient pressure, ...

Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

KAUST Repository

Edhaim, Fatimah

2017-12-21

Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black gels produced porous materials with BET surface areas of 230 m2/g (KCrBiTe3), 450 m2/g (KZnBiTe3) and 514 m2/g (KFeBiTe3). The adsorption properties of the resulting chalcogenide aerogels or chalcogels have been studied using volatile organic hydrocarbons (VOCs) and gases as adsorptives. The results show preferential adsorption of toluene vapor over cyclohexane vapor. The adsorption capacity toward toluene is 5.02 mmol/g for KCrBiTe3, 5.58 mmol/g for KZnBiTe3 and 7.89 mmol/g for KFeBiTe3. Preferential adsorption of CO2 over CH4 or H2 was observed for the chalcogels: KCrBiTe3 (CO2/H2: 175, CO2/CH4: 50), KZnBiTe3 (CO2/H2: 180 and CO2/CH4: 60) and KFeBiTe3 (CO2/H2: 225 and CO2/CH4: 65).

Enhanced ferroelectric photoelectrochemical properties of polycrystalline BiFeO{sub 3} film by decorating with Ag nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Liu, Qing; Shen, Mingrong; Fang, Liang, E-mail: lfang@suda.edu.cn [College of Physics, Optoelectronics and Energy and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China); Zhou, Yang; You, Lu; Wang, Junling [School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore 639798 (Singapore)

2016-01-11

Polycrystalline BiFeO{sub 3} (BFO) films are fabricated on Pt/Ti/SiO{sub 2}/Si(100) substrate as photoelectrode using sol-gel method. The microstructure, optical, and photoelectrochemical (PEC) properties of the films are characterized and optimized by controlling the film thickness. Moreover, the PEC properties of the BFO films are dependent on ferroelectric polarization, which is mainly ascribed to the modulation of band structure at the BFO/electrolyte interface by the polarization. Further enhancement of PEC properties is obtained by decorating the samples with appropriate amounts of Ag nanoparticles, which is attributed to the reduced electron-hole recombination, and localized surface plasmon resonance effect of Ag nanoparticles.

Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

Science.gov (United States)

Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

Nd{sup 3+}-doped TeO{sub 2}-Bi{sub 2}O{sub 3}-ZnO transparent glass ceramics for laser application at 1.06 μm

Energy Technology Data Exchange (ETDEWEB)

Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian [Central South of University, School of Materials Science and Engineering, Changsha (China)

2017-04-15

The high crystallinity transparent glass ceramics based on Nd{sup 3+}-doped 70TeO{sub 2}-15Bi{sub 2}O{sub 3}-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd{sub 2}O{sub 3} content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd{sub 2}O{sub 3} enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi{sub 2}Te{sub 4}O{sub 11} in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd{sub 2}O{sub 3} content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd{sub 2}O{sub 3} content due to the obvious energy migration among Nd{sup 3+}. According to the extreme strong emission band around 1062 nm and the optimum Nd{sub 2}O{sub 3} content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications. (orig.)

On the study of the solid-solid phase transformation of TlBiTe2

International Nuclear Information System (INIS)

Chrissafis, K.; Vinga, E.S.; Paraskevopoulos, K.M.; Polychroniadis, E.K.

2003-01-01

The narrow gap semiconductor TlBiTe 2 undergoes a solid-solid phase transformation from the rhombohedral (D 3d ) to the cubic (O h ) phase. The present paper deals with the study of this phase transformation combining the results of Differential Scanning Calorimetry (DSC) and Transmission Electron Microscopy (TEM). It has been found that during heating the transformation is an athermal activated process, which can be described only by a combination of more than one processes while during cooling it exhibits an expectable thermal hysteresis due to the volume difference. The results of the kinetic analysis combined with the electron microscopy findings, supported also by the Fourier Transform Infrared (FTIR) spectroscopy ones, lead to the conclusion that TlBiTe 2 undergoes a multiple-step, displacive, martensitic type transformation. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Non-isothermal crystallization kinetics and phase transformation of Bi2O3-SiO2 glass-ceramics

Directory of Open Access Journals (Sweden)

Guo H.W.

2011-01-01

Full Text Available The Bi2O3-SiO2 (BS glass-ceramics were prepared by melt-quench technique, and the crystallization kinetics and phase transformation behavior were investigated in accordance with Kissinger and Johson-Mehl-Avrami equation, DSC, XRD and SEM. The results show that in the heat treatment process (or termed as re-crystallizing process Bi2SiO5 and Bi4Si3O12 crystals were found consequently. Respectively, the crystallization activation energies of the two crystals are Ep1=14.8kJ/mol and Ep2=34.1kJ/mol. And the average crystallization index of n1=1.73 and n2=1.38 suggested volume nucleation, one-dimensional growth and surface nucleation, one-dimensional growth from surface to the inside respectively. The meta-stable needle-like Bi2SiO5 crystals are easily to be transformed into stable prismatic Bi4Si3O12 crystals. By quenching the melt and hold in 850°C for 1h, the homogenous single Bi4Si3O12 crystals were found in the polycrystalline phase of the BS glassceramics system.

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

Science.gov (United States)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

Science.gov (United States)

Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

2012-06-29

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

Local Seebeck coefficient near the boundary in touching Cu/Bi-Te/Cu composites

International Nuclear Information System (INIS)

Yamashita, O.; Odahara, H.

2007-01-01

The thermo-emf ΔV and temperature difference ΔT across the boundary were measured as a function of r for the touching p- and n-type Cu/Bi-Te/Cu composites composed of a combination of t Bi-Te =2.0 mm and t Cu =0.3 mm, where ΔT is produced by imposing a constant voltage of 1.7 V on two Peltier modules connected in series and r is the distance from the boundary that corresponds to the interval s between two thermocouples. The resultant Seebeck coefficient α across the boundary was obtained from the relation α=ΔV/ΔT. As a result, the resultant α of the touching p- and n-type composites have surprisingly great local maximum values of 1330 and -1140 μV/K at r∼0.03 mm, respectively, and decreased rapidly with an increase of r to approach the Seebeck coefficients of the intrinsic Bi-Te compounds. The resultant maximum α of the touching p- and n-type Cu/Bi-Te/Cu composites are approximately 5.4 and 5.5 times higher in absolute value than those of the intrinsic Bi-Te compounds, respectively. It was thus clarified for the first time that the local Seebeck coefficient is enhanced most strongly in the Bi-Te region where there is an approximately 30-μm distance from the boundary, not at the boundary between Bi-Te compounds and copper. (orig.)

Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

KAUST Repository

Zhu, Zhiyong

2013-02-06

By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

KAUST Repository

Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

2013-01-01

By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

Growth and structural properties of indium sesquitelluride (In2Te3) thin films

International Nuclear Information System (INIS)

Desai, R.R.; Lakshminarayana, D.; Patel, P.B.; Patel, P.K.; Panchal, C.J.

2005-01-01

Indium sesquitelluride (In 2 Te 3 ) compound was synthesized by mixing and melting the pure individual elements in stoichiometric proportions. The synthesized compound was utilized for the deposition of In 2 Te 3 thin films on glass and freshly cleaved NaCl substrates using flash evaporation technique. The structure of In 2 Te 3 thin films has been studied on the glass substrates by X-ray diffraction technique and on the cleavage faces of NaCl by electron diffraction technique. It was observed that the deposition from an ordered α-phase compound results in polycrystalline films on glass substrate at 473 K which are predominant α-phase and random β-phase compounds resulting in single crystal films on NaCl substrate at 523 K. Effect of source and substrate temperature on the composition of In 2 Te 3 was also studied

Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

Energy Technology Data Exchange (ETDEWEB)

Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

2016-07-01

Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

Effect of cationic size in Hg (Tl/Bi) Ba2Ca2Cu3O8+δ on ...

Indian Academy of Sciences (India)

In this paper we have reported investigations on the effect of simultaneous substitution of Bi and Tl at the H site in the oxygen deficient HO layer of HBa2Ca2Cu3O8+ cuprate superconductor. Bulk polycrystalline samples have been prepared by the two-step solid state reaction process (precursor route). It has been ...

Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te) x -(Bi0.5Sb1.5Te3)1-x (x=0-1.0) alloys prepared by spark plasma sintering

International Nuclear Information System (INIS)

Cui, J.L.; Xue, H.F.; Xiu, W.J.; Jiang, L.; Ying, P.Z.

2006-01-01

In this paper, pseudo-binary (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9x10 4 to 15.6x10 4 Ω -1 m -1 at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi 0.5 Sb 1.5 Te 3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x=0.025 reaches 1.1 at 478 K, whereas that of the ternary Bi 0.5 Sb 1.5 Te 3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag 0.365 Sb 0.558 Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag 0.365 Sb 0.558 Te in the Ag-doped Ag-Bi-Sb-Te system. - Graphical abstract: The temperature dependence of the dimensionless thermoelectric figure of merit ZT for different (Ag 0.365 Sb 0.558 Te) x -(Bi 0.5 Sb 1.5 Te 3 ) 1- x (x=0-1.0) alloys prepared by spark plasma sintering

Electronic and transport properties of the Mn-doped topological insulator Bi.sub.2./sub.Te.sub.3./sub.: a first-principles study

Czech Academy of Sciences Publication Activity Database

Carva, K.; Kudrnovský, Josef; Máca, František; Drchal, Václav; Turek, I.; Baláž, P.; Tkáč, V.; Holý, V.; Sechovský, V.; Honolka, Jan

2016-01-01

Roč. 93, č. 21 (2016), s. 1-8, č. článku 214409. ISSN 2469-9950 R&D Projects: GA ČR(CZ) GA14-30062S Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně Institutional support: RVO:68378271 Keywords : topological insulator * electronic structure * transport * Bi 2 Te 3 * Mn dopant Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

KAUST Repository

Edhaim, Fatimah; Rothenberger, Alexander

2017-01-01

Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black

Microstructure, mechanical properties, and thermoelectric properties of hot-extruded p-type Te-doped Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds

Energy Technology Data Exchange (ETDEWEB)

Park, K; Seo, J; Lee, C

1997-07-01

The p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds with Te dopant (4.0 and 6.0 wt%) and without dopant were fabricated by hot extrusion in the temperature range of 300 to 510 C under an extrusion ratio of 20:1. The undoped and Te doped compounds were highly dense and showed high crystalline quality. The grains contained many dislocations and were fine equiaxed ({approximately}1.0 {micro}m) owing to the dynamic recrystallization during the extrusion. The hot extrusion gave rise to the preferred orientation of grains. The bending strength and the figure of merit of the undoped and Te doped compounds were increased with increasing the extrusion temperature. The Te dopant significantly increased the figure of merit. The values of the figure of merit of the undoped and 4.0 wt% Te-doped compounds hot extruded at 440 C were 2.11 x 10{sup {minus}3}/K and 2.94 x 10{sup {minus}3}/K, respectively.

Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

Science.gov (United States)

Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

2014-03-01

When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

Systematic study of transport via surface and bulk states in Bi2Te3 topological insulator

Science.gov (United States)

de Castro, S.; Peres, M. L.; Chitta, V. A.; Gratens, X.; Soares, D. A. W.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.; Oliveira, N. F., Jr.

2016-07-01

We performed magnetoresistance measurements on Bi2Te3 thin film in the temperature range of T = 1.2-4.0 K and for magnetic fields up to 2 T. The curves exhibited anomalous behavior for temperatures below 4.0 K. Different temperature intervals revealed electrical transport through different conductive channels with clear signatures of weak antilocalization. The magnetoresistance curves were explained using the Hikami-Larkin-Nagaoka model and the 2D Dirac modified model. The comparison between the parameters obtained from the two models revealed the transport via topological surface states and bulk states. In addition, a superconductive like transition is observed for the lowest temperatures and we suggest that this effect can be originated from the misfit dislocations caused by strain, giving rise to a superconductive channel between the interface of the film and the substrate.

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

Energy Technology Data Exchange (ETDEWEB)

Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

2016-10-25

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

Faraday Rotation Due to Surface States in the Topological Insulator (Bi1-xSbx)2Te3.

Science.gov (United States)

Shao, Yinming; Post, Kirk W; Wu, Jhih-Sheng; Dai, Siyuan; Frenzel, Alex J; Richardella, Anthony R; Lee, Joon Sue; Samarth, Nitin; Fogler, Michael M; Balatsky, Alexander V; Kharzeev, Dmitri E; Basov, D N

2017-02-08

Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2 Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.

Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

International Nuclear Information System (INIS)

Li Long-Long; Xu Wen

2015-01-01

We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

Enhanced thermoelectric figure-of-merit in Bi-Sb-Te nanocomposites with homogenously dispersed oxide ceramic ZrO2 nanoparticles

Science.gov (United States)

Madavali, B.; Kim, H. S.; Lee, K. H.; Hong, S. J.

2017-06-01

In this research, p-type BiSbTe/ZrO2 nanocomposite powders were fabricated by high-energy ball milling. Different weight percentages of ZrO2 (2, 4, and 6 wt. %) nanoparticles were incorporated into the bulk (BiSbTe) matrix by consolidation of as-synthesized nanocomposites (NCs) powder by spark plasma sintering at 673 K. The phase and existence of ZrO2 nano-inclusions was confirmed by X-ray diffraction and transmission electron microscopy-selected area electron diffraction analysis. The Seebeck coefficient of the BiSbTe/ZrO2 NCs was significantly improved (˜36% for 4 wt. % added NCs) by a decrease in the carrier concentration and energy filtering effect, whereas the thermal conductivity was much reduced via strong scattering of carriers/phonons. The peak thermoelectric figure-of-merit (1.34 ± 0.06) was obtained for BiSbTe into which 2 wt. % ZrO2 was dispersed, which was approximately 20% greater than that of the undispersed sample. The hardness of the nanocomposites was significantly improved (˜27%) due to grain-boundary hardening and a dispersion strengthening mechanism.

Thermal Stress Analysis and Structure Parameter Selection for a Bi2Te3-Based Thermoelectric Module

Science.gov (United States)

Gao, Jun-Ling; Du, Qun-Gui; Zhang, Xiao-Dan; Jiang, Xin-Qiang

2011-05-01

The output power and conversion efficiency of thermoelectric modules (TEMs) are mainly determined by their material properties, i.e., Seebeck coefficient, electrical resistivity, and thermal conductivity. In practical applications, due to the influence of the harsh environment, the mechanical properties of TEMs should also be considered. Using the finite-element analysis (FEA) model in ANSYS software, we present the thermal stress distribution of a TEM based on the anisotropic mechanical properties and thermoelectric properties of hot-pressed materials. By analyzing the possibilities of damage along the cleavage plane of Bi2Te3-based thermoelectric materials and by optimizing the structure parameters, a TEM with better mechanical performance is obtained. Thus, a direction for improving the thermal stress resistance of TEMs is presented.

Magnetic ordering in Ho-doped Bi{sub 2}Te{sub 3} topological insulator

Energy Technology Data Exchange (ETDEWEB)

Figueroa, A.I.; Van der Laan, G.; Hesjedal, T. [Magnetic Spectroscopy Group, Diamond Light Source, Didcot (United Kingdom); Harrison, S.E. [Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom); Department of Electrical Engineering, Stanford University, Stanford, CA (United States); Collins-McIntyre, L.J. [Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

2016-06-15

We investigate the magnetic properties of Ho-doped Bi{sub 2}Te{sub 3} thin films grown by molecular beam epitaxy. Analysis of the polarized X-ray absorption spectra at the Ho M{sub 5} absorption edge gives an effective 4f magnetic moment which is ∝45% of the Hund's rule ground state value. X-ray magnetic circular dichroism (XMCD) shows no significant anisotropy, which suggests that the reduced spin moment is not due to the crystal field effects, but rather the presence of non-magnetic or antiferromagnetic Ho sites. Extrapolating the temperature dependence of the XMCD measured in total electron yield and fluorescence yield mode in a field of 7 T gives a Curie-Weiss temperature of and vartheta;{sub CW} ∼ -30 K, which suggests antiferromagnetic ordering, in contrast to the paramagnetic behavior observed with SQUID magnetometry. From the anomaly of the XMCD signal at low temperatures, a Neel temperature T{sub N} between 10 K and 25 K is estimated. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

3D study in modelling in static regime of a bi facial polycrystalline solar cell under intense light and under a constant magnetic field

International Nuclear Information System (INIS)

ZOUNGRANA Martial

2010-01-01

In this work we propose a three-dimensional (3D) study of magnetic field, light concentration and electron gradient concentration electric field respective influences on bi facial polycrystalline silicon solar cell behaviour. The hold account of these parameters in our study leads to the new expressions of continuity equations, electric and electronic parameters. On the basis of these equations, grain size, grain boundary recombination velocity, magnetic field and light intensity effects on carriers density, photocurrent, photovoltage, electric and electronic parameters are analysed. We finally propose an equivalent electric model of bi facial polycrystalline silicon solar cell under magnetic field. According to this model, electric parameters expressions was established (shunt and series resistances, space charge zone capacity ) and we study magnetic field, grain size, grain boundary recombination velocity and light concentration influences on these parameters.(Author) [fr

Density functional study of BiSbTeSe{sub 2} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Mohammadpourrad, Zahra; Abolhassani, Mohammadreza [Department of Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2017-08-15

In this work, using density functional theory calculations, we have investigated the band topology of bulk BiSbTeSe{sub 2} and its thin film electronic properties in several thicknesses. It is one member of the quaternary compounds Bi{sub 2-x}Sb{sub x}Te{sub 3-y}Se{sub y} (BSTS) with the best intrinsic bulk insulating behavior. Based on our calculations we have found that a band inversion at Γ-point is induced when spin-orbit coupling is turned on, with an energy gap of about 0.318 eV. The film thickness has an effect on the surface states such that a gap opens at Dirac point in 6 quintuple-layers film and with decrease in thickness, the magnitude of the gap increases. The atomic contributions have been mapped out for the first few layers of thin films to demonstrate the surface states. The relative charge density has been calculated layer-wise and the penetration depth of the surface states into the bulk region is found to be about 2.5-3.5 quintuple layers, depending on the termination species of thin films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structural and Moessbauer Effect Studies of 0.5Bi0.95Dy0.05FeO3-0.5Pb(Fe2/3W1/3)O3 Multiferroic

International Nuclear Information System (INIS)

Stoch, A.; Zachariasz, P.; Stoch, P.; Kulawik, J.; Maurin, J.

2011-01-01

A polycrystalline ceramic of 0.5Bi 0.95 Dy 0.05 FeO 3 -0.5Pb(Fe 2/3 W 1/3 )O 3 was synthesized from a solid-state reaction method. At room temperature material exhibits both magnetic and electric dipolar properties simultaneously. Detailed X-ray diffraction analysis and Moessbauer effect studies have been done to determine the crystallographic structure and magnetic properties of 0.5Bi 0.95 Dy 0.05 FeO 3 -0.5Pb(Fe 2/3 W 1/3 )O 3 . T N temperature was estimated at around 600 K. (authors)

Giant strain with low cycling degradation in Ta-doped [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 lead-free ceramics

International Nuclear Information System (INIS)

Liu, Xiaoming; Tan, Xiaoli

2016-01-01

Non-textured polycrystalline [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2](Ti_1_−_xTa_x)O_3 ceramics are fabricated and their microstructures and electrical properties are characterized. Transmission electron microscopy reveals the coexistence of the rhombohedral R3c and tetragonal P4bm phases in the form of nanometer-sized domains in [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 with low Ta concentration. When the composition is x = 0.015, the electrostrain is found to be highly asymmetric under bipolar fields of ±50 kV/cm. A very large value of 0.62% is observed in this ceramic, corresponding to a large-signal piezoelectric coefficient d_3_3* of 1240 pm/V (1120 pm/V under unipolar loading). These values are greater than most previously reported lead-free polycrystalline ceramics and can even be compared with some lead-free piezoelectric single crystals. Additionally, this ceramic displays low cycling degradation; its electrostrain remains above 0.55% even after undergoing 10 000 cycles of ±50 kV/cm bipolar fields at 2 Hz. Therefore, Ta-doped [Bi_1_/_2(Na_0_._8K_0_._2)_1_/_2]TiO_3 ceramics show great potential for large displacement devices.

Fabrication and mechanical properties of anodized zirconium dioxide nanotubular arrays

International Nuclear Information System (INIS)

Wang Luning; Luo Jingli

2011-01-01

A series of highly ordered ZrO 2 nanotubular arrays with different thickness was synthesized by changing the anodization voltage or anodization period. The thickness of the nanotubular arrays depended on the anodization voltage and anodization period. Openings of the tubular structure were only slightly affected by the anodization voltage. Microindentation tests demonstrated that the apparent Young's modulus, ratio of elastic energy to the total deformation energy and hardness decreased as the thickness of the nanotubular array films increased due to densification and collapse of longer nanotubes under external force. Resistance of nanotubular arrays to sliding wear was evaluated in different cultures. Wear loss, which was proportional to the width of the wear track, significantly decreased in water compared with that in air. The pH values of solutions slightly affected the width of the wear track of the ZrO 2 nanotubular arrays. The results showed that wear loss of the ZrO 2 nanotubular arrays and friction force on the ZrO 2 nanotubular arrays decreased with increasing pH from 2.5 to 13.

Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

Directory of Open Access Journals (Sweden)

Viktoriia Ohorodniichuk

2017-06-01

Full Text Available Melt-spinning (MS has been reported as a promising tool to tailor the microstructure of bulk thermoelectric materials leading to enhanced thermoelectric performances. Here, we report on a detailed characterization of p-type Bi0.48Sb1.52Te3 ribbons produced by melt-spinning. The microstructure of the melt-spun ribbons has been studied by means of X-ray diffraction, scanning and transmission electron microscopy (TEM. The analyses indicate that the ribbons are highly-textured with a very good chemical homogeneity. TEM reveals clear differences in the microstructure at large and short-range scales between the surface that was in contact with the copper wheel and the free surface. These analyses further evidence the absence of amorphous regions in the melt-spun ribbons and the precipitation of elemental Te at the grain boundaries. Low-temperature electrical resistivity and thermopower measurements (20–300 K carried out on several randomly-selected ribbons confirm the excellent reproducibility of the MS process. However, the comparison of the transport properties of the ribbons with those of bulk polycrystalline samples of the same initial composition shows that MS leads to a more pronounced metallic character. This difference is likely tied to changes in deviations from stoichiometry due to the out-of-equilibrium conditions imposed by MS.

Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

NARCIS (Netherlands)

Li, C.; De Ronde, B.; Nikitin, A.; Huang, Y.; Golden, M.S.; De Visser, A.; Brinkman, A.

2017-01-01

The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

Science.gov (United States)

Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae

2017-12-01

Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy ( V 3- In) and higher concentration of the V 3- In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V 3- In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

High-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution

Directory of Open Access Journals (Sweden)

J.-B. Vaney

2016-10-01

Full Text Available Bi2Te3-based compounds are a well-known class of outstanding thermoelectric materials. β-As2Te3, another member of this family, exhibits promising thermoelectric properties around 400 K when appropriately doped. Herein, we investigate the high-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution. Powder X-ray diffraction and scanning electron microscopy experiments showed that a solid solution only exists up to x = 0.035. We found that substituting Bi for As has a beneficial influence on the thermopower, which, combined with extremely low thermal conductivity values, results in a maximum ZT value of 0.7 at 423 K for x = 0.017 perpendicular to the pressing direction.

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

Science.gov (United States)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

2015-06-14

Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

Science.gov (United States)

Park, J. H.; Kim, S.-W.; Kim, J. H.; Ko, D.-H.; Wu, Z.; Cho, S. L.; Ahn, D.; Ahn, D. H.; Lee, J. M.; Nam, S. W.

2015-08-01

In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9 films

Directory of Open Access Journals (Sweden)

J. H. Park

2015-08-01

Full Text Available In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9 as a phase change material for reliable PCM (Phase Change Memory with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9 film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0 films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0 film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0 were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9 is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

Energy Technology Data Exchange (ETDEWEB)

Guttmann, Gilad M. [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Dadon, David [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Gelbstein, Yaniv [The Unit of Energy Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel); Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

2015-08-14

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass

Science.gov (United States)

Colegrove, E.; Banai, R.; Blissett, C.; Buurma, C.; Ellsworth, J.; Morley, M.; Barnes, S.; Gilmore, C.; Bergeson, J. D.; Dhere, R.; Scott, M.; Gessert, T.; Sivananthan, Siva

2012-10-01

Multiple polycrystalline CdS/CdTe solar cells with efficiencies greater than 15% were produced on buffered, commercially available Pilkington TEC Glass at EPIR Technologies, Inc. (EPIR, Bolingbrook, IL) and verified by the National Renewable Energy Laboratory (NREL). n-CdS and p-CdTe were grown by chemical bath deposition (CBD) and close space sublimation, respectively. Samples with sputter-deposited CdS were also investigated. Initial results indicate that this is a viable dry-process alternative to CBD for production-scale processing. Published results for polycrystalline CdS/CdTe solar cells with high efficiencies are typically based on cells using research-grade transparent conducting oxides (TCOs) requiring high-temperature processing inconducive to low-cost manufacturing. EPIR's results for cells on commercial glass were obtained by implementing a high-resistivity SnO2 buffer layer and by optimizing the CdS window layer thickness. The high-resistivity buffer layer prevents the formation of CdTe-TCO junctions, thereby maintaining a high open-circuit voltage and fill factor, whereas using a thin CdS layer reduces absorption losses and improves the short-circuit current density. EPIR's best device demonstrated an NREL-verified efficiency of 15.3%. The mean efficiency of hundreds of cells produced with a buffer layer between December 2010 and June 2011 is 14.4%. Quantum efficiency results are presented to demonstrate EPIR's progress toward NREL's best-published results.

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

Science.gov (United States)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Effect of spark plasma sintering conditions on the thermoelectric properties of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloys

Energy Technology Data Exchange (ETDEWEB)

Lim, Sang-Soon [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Ju-Heon [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kwon, Beomjin; Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Ki-Suk; Baik, Jeong Min [School of Materials and Science Engineering, UNIST, Ulsan 689-798 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Choi, Won Jun [Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Dong-Ik [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hyun, Dow-Bin; Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Baek, Seung-Hyub, E-mail: shbaek77@kist.re.kr [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

2016-09-05

As a field-assisted technique, spark plasma sintering (SPS) enables densification of specimens in a very short period of time compared to other sintering techniques. For high performance thermoelectric material synthesis, SPS is widely used to fabricate nanograin-structured thermoelectric materials by rapidly densifying the nanopowders suppressing grain growth. However, the microstructural evolution behavior of thermoelectric materials by SPS, another important process during sintering, has been rarely studied. Here, we explore SPS as a tool to control the microstructure by long-time SPS. Using p-type (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} thermoelectric materials as a model system, we systematically vary SPS temperature and time to understand the correlations between SPS conditions, microstructural evolution, and the thermoelectric properties. Our results show that the relatively low eutectic temperature (∼420 °C) and the existence of volatile tellurium (Te) are critical factors to determine both microstructure and thermoelectric property. In the liquid-phase sintering regime, rapid evaporation of Te leads to a strong dependence of thermoelectric property on SPS time. On the other hand, in the solid-phase sintering regime, there is a weak dependence on SPS time. The optimum thermoelectric figure-of-merit (Z) of 2.93 × 10{sup −3}/K is achieved by SPS at 500 °C for 30 min. Our results will provide an insight on the optimization of SPS conditions for materials containing volatile elements with low eutectic temperature. - Highlights: • Spark plasma sintering (SPS) is used to synthesize the thermoelectric (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3}. • Liquid phase and volatile element are a key for the microstructure and thermoelectric property. • Thermoelectric figure-of-merit of 2.9 × 10{sup −3}/K is achieved at 500 °C for 30 min.

Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires.

Science.gov (United States)

Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

2016-01-11

Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.

Fabrication and thermoelectric performance of textured n-type Bi2(Te,Se)3 by spark plasma sintering

International Nuclear Information System (INIS)

Jiang Jun; Chen Lidong; Bai Shengqiang; Yao Qin; Wang Qun

2005-01-01

The n-type Bi 2 (Te,Se) 3 thermoelectric materials with preferred grain orientation have been fabricated through the spark plasma sintering (SPS) technique. The c-axis of the grains in the sintered samples were preferentially oriented parallel to the pressing direction, the orientation factor of the (0 0 l) planes changed from 0.4 to 0.85 with the sintering conditions. The anisotropy was investigated by measuring the electrical conductivities in the two directions perpendicular and parallel to the pressing direction. The optimal figure of merit ZT (ZT = α 2 σT/κ) of the sintered materials in the direction perpendicular to the pressing direction was comparative to that of the zone-melted materials in the same crystallographic direction, while the bending strength reached about 80 MPa, which is 7-8 times of that of the zone-melted materials

Thermoelectric and Transport Properties of N-Type Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} Solid Solutions

Energy Technology Data Exchange (ETDEWEB)

Eum, A-Young; Kim, Il-Ho [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-03-15

Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} (x = 0.1, 0.2 and y = 0.15, 0.3) solid solutions were prepared using encapsulated melting and hot pressing. The lattice constants decreased with increases in the Sb and the Se contents, which revealed the successful formation of solid solutions. The relative densities of the hot-pressed specimens were 95 - 98%. All specimens exhibited n-type conduction at temperatures from 323 K to 523 K, and the electrical conductivity slightly decreased with increasing temperature. With an increase in the Se content, the Seebeck coefficient increased while the electrical and the thermal conductivities decreased; thus, the dimensionless figure of merit could be improved. The maximum dimensionless figure of merit ZT{sub max} = 0.89 was obtained at 423 K for Bi{sub 1.8}Sb{sub 0.2}Te{sub 2.7}Se{sub 0.3}. An increase in the Sb content resulted in a decrease in the lattice thermal conductivity because of an increase in alloy scattering, but its effect on the electrical properties was not superior to the effect of Se substitution. Therefore, Sb substitution could effectively control the thermal properties while Se substitution could effectively control the electrical properties.

Ferromagnetism in Fe{sub 3-x-y}Ni{sub x}GeTe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Stahl, Juliane; Johrendt, Dirk [Muenchen Univ. (Germany). Dept. Chemie; Pomjakushin, Vladimir [Paul Scherrer Institute, Villigen (Switzerland). Lab. for Neutron Scattering

2016-07-01

Polycrystalline samples of Fe{sub 3-y}GeTe{sub 2} (0.08 ≤ y ≤ 0.29) and the solid solutions Fe{sub 3-x-y}Ni{sub x}GeTe{sub 2} (0.24 ≤ x ≤ 1.32; 0.14 ≤ y ≤ 0.41) were synthesized at 898-973 K in a resistance furnace and characterized by X-ray and neutron powder diffraction with Rietveld analysis (Fe{sub 3}GeTe{sub 2} type, P6{sub 3}/mmc, a = 402.665(3), c = 1632.820(14) pm for x = 0, y = 0.08). Fe{sub 3}Ge layers with planar FeGe hexagons and additional iron atoms above and below the rings are separated by double layers of tellurium atoms. Fe{sub 3}GeTe{sub 2} is ferromagnetic below T{sub C} = 230 K with magnetic moments aligned along the c axis. T{sub C} depends on the iron content and decreases with increasing iron vacancies continuously to 153 K in Fe{sub 2.71}GeTe{sub 2}. Further reduction of T{sub C} is possible by nickel substitution until magnetic ordering is nearly absent in Fe{sub 1.33}Ni{sub 1.32}GeTe{sub 2}. The suppression of the magnetic ordering is caused by random dilution of the magnetic iron atoms either by vacancies or by non-magnetic nickel atoms.

Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

Energy Technology Data Exchange (ETDEWEB)

Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

2016-04-15

Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

STM imaging of electronic waves on the surface of Bi2Te3: topologically protected surface states and hexagonal warping effects

Energy Technology Data Exchange (ETDEWEB)

Alpichshev, Zhanybek; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Analytis, J.G.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Chu, J.-H.; Fisher, I.R.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Chen, Y.L.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept.; Shen, Z.X.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Fang, A.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Kapitulnik, A.; /SIMES, Stanford /SLAC /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.

2010-06-02

Scanning tunneling spectroscopy studies on high-quality Bi{sub 2}Te{sub 3} crystals exhibit perfect correspondence to ARPES data, hence enabling identification of different regimes measured in the local density of states (LDOS). Oscillations of LDOS near a step are analyzed. Within the main part of the surface band oscillations are strongly damped, supporting the hypothesis of topological protec- tion. At higher energies, as the surface band becomes concave, oscillations appear which disperse with a particular wave-vector that may result from an unconventional hexagonal warping term.

Synthesis and thermoelectric performance of a p-type Bi0.4Sb1.6Te3 material developed via mechanical alloying

International Nuclear Information System (INIS)

Jimenez, Sandra; Perez, Jose G.; Tritt, Terry M.; Zhu, Song; Sosa-Sanchez, Jose L.; Martinez-Juarez, Javier; López, Osvaldo

2014-01-01

Highlights: • This paper shows a Bi 1.6 Sb 0.4 Te 3 alloy prepared by MA-SPS process. • A ZT value of about 1.2–1.3 around 360 K was achieved for this compound. • The lower sintering process was carried out in a short time. • The resulting material has a very fine microstructure and high density. - Abstract: A p-type Bi 0.4 Sb 1.6 Te 3 thermoelectric compound was fabricated via mechanical alloying of bismuth, antimony and tellurium elemental powders as starting materials. The mechanically alloyed compositions were sintered through a spark-plasma sintering (SPS) process. The effect of the milling time was investigated. In order to characterize the powders obtained via mechanical alloying, X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis were used. The morphological evolution was studied by scanning electron microscopy (SEM). Results showed that the p-type Bi 0.4 Sb 1.6 Te 3 compound was formed after 2 h of milling. Further, the variation of milling time showed that the synthesized phase was stable. All the powders exhibit the same morphology albeit with slight differences. Measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity were performed in the temperature range 300–520 K for the SPS samples. The resulting thermoelectric figure of merit ZT reaches a maximum of 1.2 at 360 K for the p-type bulk material with a 5 h milling time. This study demonstrates the possibility of preparing thermoelectric materials of high performance and short processing time

Photocatalytic activity of Bi_2WO_6/Bi_2S_3 heterojunctions: the facilitation of exposed facets of Bi_2WO_6 substrate

International Nuclear Information System (INIS)

Yan, Long; Wang, Yufei; Shen, Huidong; Zhang, Yu; Li, Jian; Wang, Danjun

2017-01-01

Highlights: • Bi_2S_3/Bi_2WO_6 hybrids with exposed (020) Bi_2WO_6 facets have been synthesized. • X-ray photoelectron spectroscopy reveals that a small amount of Bi_2S_3 was formed. • The enhanced photoactivity of hybrids is due to heterojunction and (020) facets. • A possible photocatalytic degradation mechanism is proposed. - Abstract: Bi_2S_3/Bi_2WO_6 hybrid architectures with exposed (020) Bi_2WO_6 facets have been synthesized via a controlled anion exchange approach. X-ray photoelectron spectroscopy (XPS) reveals that a small amount of Bi_2S_3 was formed on the surface of Bi_2WO_6 during the anion exchange process, thus leading to the transformation from the Bi_2WO_6 to Bi_2S_3/Bi_2WO_6. A rhodamine B (RhB) aqueous solution was chosen as model organic pollutants to evaluate the photocatalytic activities of the Bi_2S_3/Bi_2WO_6 catalysts. Under visible light irradiation, the Bi_2S_3/Bi_2WO_6-TAA displayed the excellent visible light photoactivities compared with pure Bi_2S_3, Bi_2WO_6 and other composite photocatalysts. The efficient photocatalytic activity of the Bi_2S_3/Bi_2WO_6-TAA composite microspheres was ascribed to the constructed heterojunctions and the inner electric field caused by the exposed (020) Bi_2WO_6 facets. Active species trapping experiments revealed that h"+ and O_2·"− are the main active species in the photocatalytic process. Furthermore, the as-obtained photocatalysts showed good photocatalytic activity after four recycles. The results presented in this study provide a new concept for the rational design and development of highly efficient photocatalysts.

Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

2015-07-01

Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

Science.gov (United States)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Characterization of the Structural Modulations in n-type Bi{sub 2} (Te{sub 0}.95Se{sub 0}.05){sub 3} Thermoelectric Compound

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sung Ho; Lee, Kap Ho [Chungnam National University, Daejeon (Korea, Republic of); Hong, Soon Jik [Kongju National University, Cheonan (Korea, Republic of)

2015-02-15

An n-type Bi{sub 2}Te{sub 3} thermoelectric compound was analyzed by using a high resolution transmission electron microscopy, and was further analyzed by using an image processing unit. A sinusoidal strain contrast of the structural modulations appeared in a multi-beam image and the fringes showed a wavelength of 12 nm with a wave vector parallel to the {101‾ 10} planes. A numerous dislocations were found to glide on to the (0001) plane with a Burgers vector of 1/3<21‾1‾0>-type on the strain field. In order for the elastic strain energy to be relieved, the resultant 1/3<21‾ 1‾0>-type dislocation was thought to be dissociated into two partial dislocations gliding on the {1‾015} planes. The variation in stacking periodicity of the 5-layers lamellar structure with respect to the basal plane of Bi{sub 2}Te{sub 3} was also observed locally. However, this stacking variation is not responsible for the formation of structural modulations. The displacement of the sinusoidal strain field on the structural modulations seems to be generated by dislocation, with presence of dipoles that are about a few nanometers apart. It is understandable that phonons should be scattered throughout the strain field of the structural modulation. Hence, the lattice thermal conductivity is expected to be decreased due to the phonon scattering on sinusoidal strain field of the structural modulations.

Thermal characteristics, Raman spectra, optical and structural properties of TiO2-Bi2O3-B2O3-TeO2 glasses

Science.gov (United States)

Gupta, Nupur; Khanna, Atul; Gonzàlez, Fernando; Iordanova, Reni

2017-05-01

Tellurite and borotellurite glasses containing Bi2O3 and TiO2 were prepared and structure-property correlations were carried out by density measurements, X-ray Diffraction (XRD), Differential Scanning Calorimetry (DSC), Raman and UV-visible spectroscopy. Titanium tellurite glasses require high melt-cooling rates and were fabricated by splat quenching. On adding B2O3, the glass forming ability (GFA) enhances, and glasses could be synthesized at lower quenching rates. The density of glasses shows a direct correlation with molecular mass of the constituents. UV-visible studies were used to determine the optical band gap and refractive index. Raman studies found that the co-ordination number of tellurium ions with oxygen (NTe-O) decreases with the increase in B2O3 as well as Bi2O3 content while, TiO2 produce only a small decrease in NTe-O, which explains the lower GFA of titanium tellurite glasses that do not contain Bi2O3 and B2O3. DSC studies show that the glass transition temperature (Tg) increases with B2O3 and TiO2 concentrations and that Tg correlates well with bond enthalpy of the metal oxides.

Structural and electrical properties of c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 thin films

CERN Document Server

Zhang, S T; Sun, H P; Pan Xiao Qing; Tan, W S; Liu, Z G; Ming, N B

2003-01-01

c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 (SBTi) thin films were fabricated on (001)SrTiO sub 3 (STO) single-crystal substrates and Pt/Ti sub 2 /SiO sub 2 /Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including theta-2 theta-scans, rocking curve scans and phi-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD phi-scans to be (001)SBTi || (001)STO, [11-bar 0]SBTi || [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 21...

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

KAUST Repository

Kong, Desheng

2011-10-02

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

Effect of Silver Doping on Transport Properties of Bi2Se3: AgxBi2Se3 and Bi2-xAgxSe3

Science.gov (United States)