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Sample records for polishing etching cleaving

  1. Chemical etching and polishing of InP

    International Nuclear Information System (INIS)

    Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

    1988-01-01

    This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

  2. Improved fabrication of HgI2 nuclear radiation detectors by machine-cleaving

    International Nuclear Information System (INIS)

    Levi, A.; Burger, A.; Schieber, M.; Vandenberg, L.; Yellon, W.B.; Alkire, R.W.

    1982-01-01

    The perfection of machine-cleaved sections from HgI 2 bulk crystals was examined. The perfection of the machine-cleaved sections as established by gamma diffraction rocking curves was found to be much better than the perfection of hand-cleaved sections or as grown thin platelets, reaching a perfection similar to that of the wire-sawn sections of HgI 2 . A correlation between the perfection and the thickness of the machine-cleaved section was also found, i.e., the thicker the cleaved-section the more perfect it is. The reproducibility of the fabrication was significantly improved by using machine cleaving in the process of fabrication. Large single crystals of HgI 2 weighing 20 to 200 g, can be grown from the vapor phase using the TOM Technique. In order to fabricate nuclear radiation detectors from these single crystals, thin sections of about 0.4 to 0.8 mm thickness have to be prepared. Up till now, the state-of-the-art of fabricating HgI 2 nuclear radiation detectors involved two methods to get thin sections from the large single crystals: (1) hand-cleaving using a razor-blade and (2) solution wire sawing. The chemical wire sawing method involves a loss of about 50% of the crystal volume and is usually followed by a chemical polishing process which involves a significant loss of volume of the original volume. This procedure is complicated and wasteful. The traditional fabrication method, i.e., hand-cleaving followed by rapid nonselective chemical etching, is simpler and less wasteful

  3. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    International Nuclear Information System (INIS)

    Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

    2009-01-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

  4. Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

    Directory of Open Access Journals (Sweden)

    Shih-Jeh Wu

    2016-10-01

    Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

  5. Passivation of mechanically polished, chemically etched and anodized zirconium in various aqueous solutions: Impedance measurements

    International Nuclear Information System (INIS)

    Abo-Elenien, G.M.; Abdel-Salam, O.E.

    1987-01-01

    Zirconium and its alloys are finding increasing applications especially in water-cooled nuclear reactors. Because of the fact that zirconium is electronegative (E 0 = -1.529V) its corrosion resistance in aqueous solutions is largely determined by the existence of a thin oxide film on its surface. The structure and properties of this film depend in the first place on the method of surface pre-treatment. This paper presents an experimental study of the nature of the oxide film on mechanically polished, chemically etched and anodized zirconium. Ac impedance measurements carried out in various acidic, neutral and alkaline solutions show that the film thickness depends on the method of surface pre-treatment and the type of electrolyte solution. The variation of the potential and impedance during anodization of zirconium at low current density indicates that the initial stages of polarization consist of oxide build-up at a rate dependent on the nature of the electrode surface and the electrolyte. Oxygen evolution commences at a stage where oxide thickening starts to decline. The effect of frequency on the measured impedance indicates that the surface reactivity, and hence the corrosion rate, decreases in the following order: mechanically polished > chemically etched > anodized

  6. Thinning of N-face GaN (0001) samples by inductively coupled plasma etching and chemomechanical polishing

    International Nuclear Information System (INIS)

    Rizzi, F.; Gu, E.; Dawson, M. D.; Watson, I. M.; Martin, R. W.; Kang, X. N.; Zhang, G. Y.

    2007-01-01

    The processing of N-polar GaN (0001) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl 2 /Ar or Cl 2 /BCl 3 Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3 nm. Maximum N-face etch rates of 370-390 nm/min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500 nm/h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2 nm

  7. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.

    2016-10-11

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  8. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

    2016-01-01

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  9. Cleaved-edge-overgrowth nanogap electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Luber, Sebastian M; Bichler, Max; Abstreiter, Gerhard; Tornow, Marc, E-mail: m.tornow@tu-bs.de [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, 85748 Garching (Germany)

    2011-02-11

    We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 M{Omega} range with k{Omega} lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

  10. Cleaved-edge-overgrowth nanogap electrodes.

    Science.gov (United States)

    Luber, Sebastian M; Bichler, Max; Abstreiter, Gerhard; Tornow, Marc

    2011-02-11

    We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 MΩ range with kΩ lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

  11. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  12. UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

    International Nuclear Information System (INIS)

    Casquel, R.; Holgado, M.; Garcia-Ballesteros, J.J.; Zinoviev, K.; Fernandez-Sanchez, C.; Sanza, F.J.; Molpeceres, C.; Laguna, M.F.; Llobera, A.; Ocana, J.L.; Dominguez, C.

    2011-01-01

    In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO 4 laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol-gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.

  13. UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

    Energy Technology Data Exchange (ETDEWEB)

    Casquel, R., E-mail: rafael.casquel@upm.es [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Holgado, M.; Garcia-Ballesteros, J.J. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Zinoviev, K.; Fernandez-Sanchez, C. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Sanza, F.J.; Molpeceres, C.; Laguna, M.F. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Llobera, A. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Ocana, J.L. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Dominguez, C. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)

    2011-04-01

    In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO{sub 4} laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol-gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.

  14. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

    International Nuclear Information System (INIS)

    Min, Zhong; Zhi-Tang, Song; Bo, Liu; Song-Lin, Feng; Bomy, Chen

    2008-01-01

    In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge 2 Sb 2 Te 5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge 2 Sb 2 Te 5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current-voltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method

  15. Chemical polishing of epitoxial silicon wafer

    International Nuclear Information System (INIS)

    Osada, Shohei

    1978-01-01

    SSD telescopes are used for the determination of the kind and energy of charged particles produced by nuclear reactions, and are the equipments combining ΔE counters and E counters. The ΔE counter is a thin SSD which is required to be thin and homogeneous enough to get the high resolution of measurement. The SSDs for ΔE counters have so far been obtained by polishing silicon plates mechanically and chemically or by applying electrolytic polishing method on epitaxial silicon wafers, but it was very hard to obtain them. The creative etching equipment and technique developed this time make it possible to obtain thin SSDs for ΔE counters. The outline of the etching equipment and its technique are described in the report. The etching technique applied for the silicon films for ΔE counters with thickness of about 10 μm was able to be experimentally established in this study. (Kobatake, H.)

  16. Thermal etching of silver: Influence of rolling defects

    Energy Technology Data Exchange (ETDEWEB)

    Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

    2016-08-15

    Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

  17. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  18. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  19. Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale

    International Nuclear Information System (INIS)

    Teague, Lucile C.; Duff, Martine C.; Cadieux, James R.; Soundararajan, Raji; Shick, Charles R.; Lynn, Kelvin G.

    2011-01-01

    A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

  20. Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

    International Nuclear Information System (INIS)

    Hossain, A.; Babalola, S.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Yang, G.; Guo, M.; Kochanowska, D.; Mycielski, A.; Burger, A.; James, R.B.

    2008-01-01

    Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 (micro)m and/or lower grits of Al 2 O 3 abrasive papers including final polishing with 0.05-(micro)m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO 3 :H 2 O:Cr 2 O 7 ). The material removal rate (etching rate) from the crystals was found to be 10 (micro)m, 30 (micro)m, and 15 (micro)m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing

  1. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Science.gov (United States)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  2. Buffered Electrochemical Polishing of Niobium

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  3. Electrolytic etching of uranium and of its alloys for examination under ordinary light

    International Nuclear Information System (INIS)

    Bouleau, M.

    1958-12-01

    The author reports a metallographic study of uranium and of some of its alloys (U-Mo with different Mo contents, U-Sn, U-Al) performed by using electrolytic etching. Samples are polished before being etched. Metallographic images are provided and results are briefly stated in terms of presence of grain boundaries, twins, platelets, pitting, metallic and non-metallic inclusions or eutectoid decomposition. The authors notice that, in some alloys with a gamma-stabilized structure, electrolytic etching allows an oxidation under reduced oxygen pressure, and then phase structure to be perfectly revealed

  4. Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

    Science.gov (United States)

    Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

    2015-02-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p enamel and dentin (p > 0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive.

  5. Electron microscopy analysis of structural changes within white etching areas

    DEFF Research Database (Denmark)

    Diederichs, Annika Martina; Schwedt, A.; Mayer, J.

    2016-01-01

    In the present work, crack networks with white etching areas (WEAs) in cross-sections of bearings were investigated by a complementary use of SEM and TEM with the focus on the use of orientation contrast imaging and electron backscatter diffraction (EBSD). Orientation contrast imaging was used...... for the first time to give detailed insight into the microstructure of WEA. A significant difference between Nital-etched and polished WEA samples was observed. It was revealed that WEAs are composed of different areas with varying grain sizes. As a result of secondary transformation, needle-shaped grains were...

  6. Preliminary quantification of a shape model for etch-pits formed during natural weathering of olivine

    International Nuclear Information System (INIS)

    Nowicki, M. Anna; Velbel, Michael A.

    2011-01-01

    Many etch-pits on olivine grains occur as a pair of cone-shaped pits sharing a base, which consequently appear as diamond-shaped etch-pits in cross-section. Quantitative image analysis of back-scattered electron images establishes empirical dimensions of olivine etch-pits in naturally weathered samples from Hawaii and North Carolina. Images of naturally etched olivine were acquired from polished thin-sections by scanning electron microscopy. An average cone-radius-to-height ratio (r:h) of 1.78 was determined for diamond-shaped cross-sections of etch-pits occurring in naturally weathered olivine grains, largely consistent with previous qualitative results. Olivine etch-pit shape as represented by r:h varies from slightly more than half the average value to slightly more than twice the average. Etch-pit shape does not appear to vary systematically with etch-pit size.

  7. Bonding efficacy of new self-etching, self-adhesive dual-curing resin cements to dental enamel.

    Science.gov (United States)

    Benetti, Paula; Fernandes, Virgílio Vilas; Torres, Carlos Rocha; Pagani, Clovis

    2011-06-01

    This study evaluated the efficacy of the union between two new self-etching self-adhesive resin cements and enamel using the microtensile bond strength test. Buccal enamel of 80 bovine teeth was submitted to finishing and polishing with metallographic paper to a refinement of #600, in order to obtain a 5-mm2 flat area. Blocks (2 x 4 x 4 mm) of laboratory composite resin were cemented to enamel according to different protocols: (1) untreated enamel + RelyX Unicem cement (RX group); (2) untreated enamel + Bifix SE cement (BF group); (3) enamel acid etching and application of resin adhesive Single Bond + RelyX Unicem (RXA group); (4) enamel acid etching and application of resin adhesive Solobond M + Bifix SE (BFA group). After 7 days of storage in distillated water at 37°C, the blocks were sectioned for obtaining microbar specimens with an adhesive area of 1 mm2 (n = 120). Specimens were submitted to the microtensile bond strength test at a crosshead speed of 0.5 mm/min. The results (in MPa) were analyzed statistically by ANOVA and Tukey's test. Enamel pre-treatment with phosphoric acid and resin adhesive (27.9 and 30.3 for RXA and BFA groups) significantly improved (p ≤ 0.05) the adhesion of both cements to enamel compared to the union achieved with as-polished enamel (9.9 and 6.0 for RX and BF). Enamel pre-treatment with acid etching and the application of resin adhesive significantly improved the bond efficacy of both luting agents compared to the union achieved with as-polished enamel.

  8. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

    International Nuclear Information System (INIS)

    Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

    2002-01-01

    Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

  9. Effect of chlorhexidine on the shear bond strength of self-etch ...

    African Journals Online (AJOL)

    The aim of this study was to investigate the effect of chlorhexidine on shear bond strength of self-etch adhesives to dentin. The crowns of 60 sound human premolars were horizontally sectioned to expose the coronal dentin. Dentin surfaces were polished with 320 grit silicon carbide papers, and were randomly divided into 4 ...

  10. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  11. Performance of a new one-step multi-mode adhesive on etched vs non-etched enamel on bond strength and interfacial morphology.

    Science.gov (United States)

    de Goes, Mario Fernando; Shinohara, Mirela Sanae; Freitas, Marcela Santiago

    2014-06-01

    To compare microtensile bond strength (μTBS) and interfacial morphology of a new one-step multimode adhesive with a two-step self-etching adhesive and two etch-and-rinse adhesives systems on enamel. Thirty human third molars were sectioned to obtain two enamel fragments. For μTBS, 48 enamel surfaces were ground using 600-grit SiC paper and randomly assigned into 6 groups (n = 8): nonetched Scotchbond Universal [SBU]; etched SBU [SBU-et]; non-etched Clearfil SE Bond [CSE]; etched CSE [CSE-et]; Scotchbond Multi-PURPOSE [SBMP]; Excite [EX]. The etched specimens were conditioned with 37% phosphoric acid for 30 s, each adhesive system was applied according to manufacturers' instructions, and composite resin blocks (Filtek Supreme Plus, 3M ESPE) were incrementally built up. Specimens were sectioned into beams with a cross-sectional area of 0.8-mm2 and tested under tension (1 mm/min). The data were analyzed with oneway ANOVA and Fisher's PLSD (α = 0.05). For interface analysis, two samples from each group were embedded in epoxy resin, polished, and then observed using scanning electron microscopy (SEM). The μTBS values (in MPa) and the standard deviations were: SBU = 27.4 (8.5); SBU-et = 33.6 (9.3); CSE = 28.5 (8.3); CSE-et = 34.2 (9.0); SBMP = 30.4 (11.0); EX = 23.3 (8.2). CSE-et and SBU-et presented the highest bond strength values, followed by SBMP, CSE, and SBU which did not differ significantly from each other. EX showed the statistically significantly lowest bond strength values. SEM images of interfaces from etched samples showed long adhesive-resin tags penetrating into demineralized enamel. Preliminary etching of enamel significantly increased bond strength for the new one-step multimode adhesive SBU and two-step self-etching adhesive CSE.

  12. Strain-free polished channel-cut crystal monochromators: a new approach and results

    Science.gov (United States)

    Kasman, Elina; Montgomery, Jonathan; Huang, XianRong; Lerch, Jason; Assoufid, Lahsen

    2017-08-01

    The use of channel-cut crystal monochromators has been traditionally limited to applications that can tolerate the rough surface quality from wet etching without polishing. We have previously presented and discussed the motivation for producing channel cut crystals with strain-free polished surfaces [1]. Afterwards, we have undertaken an effort to design and implement an automated machine for polishing channel-cut crystals. The initial effort led to inefficient results. Since then, we conceptualized, designed, and implemented a new version of the channel-cut polishing machine, now called C-CHiRP (Channel-Cut High Resolution Polisher), also known as CCPM V2.0. The new machine design no longer utilizes Figure-8 motion that mimics manual polishing. Instead, the polishing is achieved by a combination of rotary and linear functions of two coordinated motion systems. Here we present the new design of C-CHiRP, its capabilities and features. Multiple channel-cut crystals polished using the C-CHiRP have been deployed into several beamlines at the Advanced Photon Source (APS). We present the measurements of surface finish, flatness, as well as topography results obtained at 1-BM of APS, as compared with results typically achieved when polishing flat-surface monochromator crystals using conventional polishing processes. Limitations of the current machine design, capabilities and considerations for strain-free polishing of highly complex crystals are also discussed, together with an outlook for future developments and improvements.

  13. Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

    Directory of Open Access Journals (Sweden)

    R Zahran

    Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

  14. Chemical mechanical polishing of BTO thin film for vertical sidewall patterning of high-density memory capacitor

    International Nuclear Information System (INIS)

    Kim, Nam-Hoon; Ko, Pil-Ju; Seo, Yong-Jin; Lee, Woo-Sun

    2006-01-01

    Most high-k materials cannot to be etched easily. Problems such as low etch rate, poor sidewall angle, plasma damage, and process complexity have emerged in high-density DRAM fabrication. Chemical mechanical polishing (CMP) by the damascene process has been used to pattern high-k materials for high-density capacitor. Barium titanate (BTO) thin film, a typical high-k material, was polished with three types of silica slurry having different pH values. Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle was obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. Planarization was also achieved for the subsequent multilevel processes. Our new CMP approach will provide a guideline for effective patterning of high-k materials by CMP

  15. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid

    International Nuclear Information System (INIS)

    Tavares, Henrique Dutra Simoes

    2001-01-01

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

  16. ROUGHNESS ANALYSIS OF VARIOUSLY POLISHED NIOBIUM SURFACES

    Energy Technology Data Exchange (ETDEWEB)

    Ribeill, G.; Reece, C.

    2008-01-01

    Niobium superconducting radio frequency (SRF) cavities have gained widespread use in accelerator systems. It has been shown that surface roughness is a determining factor in the cavities’ effi ciency and maximum accelerating potential achievable through this technology. Irregularities in the surface can lead to spot heating, undesirable local electrical fi eld enhancement and electron multipacting. Surface quality is typically ensured through the use of acid etching in a Buffered Chemical Polish (BCP) bath and electropolishing (EP). In this study, the effects of these techniques on surface morphology have been investigated in depth. The surface of niobium samples polished using different combinations of these techniques has been characterized through atomic force microscopy (AFM) and stylus profi lometry across a range of length scales. The surface morphology was analyzed using spectral techniques to determine roughness and characteristic dimensions. Experimentation has shown that this method is a valuable tool that provides quantitative information about surface roughness at different length scales. It has demonstrated that light BCP pretreatment and lower electrolyte temperature favors a smoother electropolish. These results will allow for the design of a superior polishing process for niobium SRF cavities and therefore increased accelerator operating effi ciency and power.

  17. Mechanical polishing as an improved surface treatment for platinum screen-printed electrodes

    Directory of Open Access Journals (Sweden)

    Junqiao Lee

    2016-07-01

    Full Text Available The viability of mechanical polishing as a surface pre-treatment method for commercially available platinum screen-printed electrodes (SPEs was investigated and compared to a range of other pre-treatment methods (UV-Ozone treatment, soaking in N,N-dimethylformamide, soaking and anodizing in aqueous NaOH solution, and ultrasonication in tetrahydrofuran. Conventional electrochemical activation of platinum SPEs in 0.5 M H2SO4 solution was ineffective for the removal of contaminants found to be passivating the screen-printed surfaces. However, mechanical polishing showed a significant improvement in hydrogen adsorption and in electrochemically active surface areas (probed by two different redox couples due to the effective removal of surface contaminants. Results are also presented that suggest that SPEs are highly susceptible to degradation by strong acidic or caustic solutions, and could potentially lead to instability in long-term applications due to continual etching of the binding materials. The ability of SPEs to be polished effectively extends the reusability of these traditionally “single-use” devices. Keywords: Screen-printed electrodes, Polishing, Platinum, Activation, Pre-treatment, Cyclic voltammetry

  18. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface

    Science.gov (United States)

    Levchenko, Iryna; Tomashyk, Vasyl; Stratiychuk, Iryna; Malanych, Galyna; Korchovyi, Andrii; Kryvyi, Serhii; Kolomys, Oleksandr

    2018-04-01

    The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical-mechanical polishing with the (NH4)2Cr2O7-HBr-CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7-HBr-ethylene glycol solutions produces the clean surface of the nanosize level (R a < 0.5 nm).

  19. Naturally etched tracks in apatites and the correction of fission track dating

    CERN Document Server

    Tien, J L

    1999-01-01

    Naturally etched tracks have been found in apatites from the rapid cooled, high-level Kunon pluton in the Zhangzhou Igneous Complex, SE China. This is manifested by the fact that the apatite fission track (FT) age derived from conventional counting of spontaneous and induced tracks yields a result of 140.6+-6.5 Ma, which is much older than the ages determined using other methods on different minerals from the same rock. When tracks are observed after etching the polished inner sections of the apatite grains, the naturally etched tracks characterized by having hazy boundaries can be distinguished from the normal tracks with sharp boundaries. The age obtained by omitting these fading-resistant hazy tracks, 76.5+-4.0 Ma, indicates the time of the Kunon pluton cooling down to approx 100 deg. C. The corrected peak age (73.8 Ma) is consistent with the other apatite FT peak ages (79.2 to 70.2 Ma) of the nearly contemporaneous plutons in the same igneous complex.

  20. Cleavage Luminescence from Cleaved Indium Phosphide

    International Nuclear Information System (INIS)

    Dong-Guang, Li

    2008-01-01

    We outline the experiments performed to gain further information about the structure and properties of cleaved InP surfaces. The experiments involved detecting the luminescence produced after cleaving thin InP plates within a high vacuum, by a process of converting the luminescence to an electrical signal which could be amplified and measured accurately. The experimental results show that the detected luminescence durations from cleaved InP are usually only about 10μs. It is believed that this time represents the time of travel of the crack with the actual recombination time being much shorter. Strong signals could also be picked up from cleaved InP in air

  1. Graphite surface topography induced by Ta cluster impact and oxidative etching

    International Nuclear Information System (INIS)

    Reimann, C.T.; Olsson, L.; Erlandsson, R.; Henkel, M.; Urbassek, H.M.

    1998-01-01

    Freshly cleaved highly oriented pyrolytic graphite (HOPG), when baked in air at ∝630 C, forms one-monolayer(ML)-deep circular pits due to oxidation initiated at surface defect sites. We found that the areal density and depths of these pits could be modulated by deliberately introducing surface and sub-surface defects by energetic ion bombardment prior to baking. Bombardment by 555-eV/atom Ta 1 + , Ta 2 + , Ta 4 + , or Ta 9 + , always enhanced the areal density of etch pits, but only bombardment by Ta 4 + , or Ta 9 + significantly enhanced the depths of the pits. We performed molecular dynamics simulations of Ta n cluster bombardment of HOPG (n = 1, 2, 4, and 9) with the aim of characterizing the damage structures induced by the bombardment and correlating them with the experimental data. For Ta 9 + , the simulations showed a high level of damage extending from the surface down to nine MLs, in agreement with the most probable etch pit depth observed. For other cluster species, predicted etch pit depths were deeper than the observed ones. Annealing or steric requirements for initiating oxidation may account for some of the differences between simulations and experimental results. (orig.)

  2. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    Science.gov (United States)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  3. Bond efficacy and interface morphology of self-etching adhesives to ground enamel.

    Science.gov (United States)

    Abdalla, Ali I; El Zohairy, Ahmed A; Abdel Mohsen, Mohamed M; Feilzer, Albert J

    2010-02-01

    This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) and Hybrid bond (Sun-Medical), a self-etching primer, Clearfil SE Bond (Kuraray), and an etch-and-rinse system, Admira Bond (Voco), were selected. Thirty human molars were used. The root of each tooth was removed and the crown was sectioned into halves. The convex enamel surfaces were reduced by polishing on silicone paper to prepare a flat surface. The bonding systems were applied on this surface. Prior to adhesive curing, a hollow cylinder (2.0 mm height/0.75 mm internal diameter) was placed on the treated surfaces. A resin composite was then inserted into the tube and cured. After water storage for 24 h, the tube was removed and shear bond strength was determined in a universal testing machine at a crosshead speed of 0.5 mm/min. The results were analyzed with ANOVA and the Tukey.-Kramer test at a 59 degrees confidence level. The enamel of five additional teeth was ground, and the etching component of each adhesive was applied and removed with absolute ethanol instead of being light cured. These teeth and selected fractured surfaces were examined by SEM. Adhesion to ground enamel of the Futurabond DC (25 +/- 3.5 MPa) and Clearfil SE Bond (23 +/- 2.9 MPa) self-etching systems was not significantly different from the etch-and-rinse system Admira Bond (27 +/- 2.3 MPa). The two self-etching adhesives Clearfil S Tri bond and Hybrid Bond demonstrated significantly lower bond strengths (14 +/- 1.4 MPa; 11 +/- 1.9 MPa) with no significant differences between them (p adhesive systems are dependent on the type of adhesive system. Some of the new adhesive systems showed bond strength values comparable to that of etch-and-rinse systems. There was no correlation between bond strength and morphological changes in

  4. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    Science.gov (United States)

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  5. Evaluation and analysis of polished fused silica subsurface quality by the nanoindenter technique

    International Nuclear Information System (INIS)

    Ma Bin; Shen Zhengxiang; He Pengfei; Sha Fei; Wang Chunliang; Wang Bin; Ji Yiqin; Liu Huasong; Li Weihao; Wang Zhanshan

    2011-01-01

    We evaluate the subsurface quality of polished fused silica samples using the nanoindenter technique. Two kinds of samples, consisting of hundreds of nanometers and micrometers of subsurface damage layers, are fabricated by controlling the grinding and polishing processes, and the subsurface quality has been verified by the chemical etching method. Then several nanoindentation experiments are performed using the Berkovich tip to investigate the subsurface quality. Some differences are found by relative measurements in terms of the relationship between the total penetration and the peak load on the surfaces, the modulus calculated over the defined depths and from unload, and the indented morphology at a constant load near the surface collapse threshold. Finally, the capabilities of such a mechanical method for detecting subsurface flaws are discussed and analyzed.

  6. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  7. Note: Automated electrochemical etching and polishing of silver scanning tunneling microscope tips.

    Science.gov (United States)

    Sasaki, Stephen S; Perdue, Shawn M; Rodriguez Perez, Alejandro; Tallarida, Nicholas; Majors, Julia H; Apkarian, V Ara; Lee, Joonhee

    2013-09-01

    Fabrication of sharp and smooth Ag tips is crucial in optical scanning probe microscope experiments. To ensure reproducible tip profiles, the polishing process is fully automated using a closed-loop laminar flow system to deliver the electrolytic solution to moving electrodes mounted on a motorized translational stage. The repetitive translational motion is controlled precisely on the μm scale with a stepper motor and screw-thread mechanism. The automated setup allows reproducible control over the tip profile and improves smoothness and sharpness of tips (radius 27 ± 18 nm), as measured by ultrafast field emission.

  8. Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

    Science.gov (United States)

    Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A.-M.; Im, Do; Phillips, H. L.; Vušković, L.

    2017-12-01

    An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity's inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

  9. Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

    Directory of Open Access Journals (Sweden)

    J. Upadhyay

    2017-12-01

    Full Text Available An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.

  10. Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

    Directory of Open Access Journals (Sweden)

    Laixi Sun

    2018-04-01

    Full Text Available The reactive ion etching (RIE process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique.

  11. Carbon nanotube substrates and catalyzed hot stamp for polishing and patterning the substrates

    Science.gov (United States)

    Wang, Yuhuang [Evanston, IL; Hauge, Robert H [Houston, TX; Schmidt, Howard K [Houston, TX; Kim, Myung Jong [Houston, TX; Kittrell, W Carter [Houston, TX

    2009-09-08

    The present invention is generally directed to catalyzed hot stamp methods for polishing and/or patterning carbon nanotube-containing substrates. In some embodiments, the substrate, as a carbon nanotube fiber end, is brought into contact with a hot stamp (typically at 200-800.degree. C.), and is kept in contact with the hot stamp until the morphology/patterns on the hot stamp have been transferred to the substrate. In some embodiments, the hot stamp is made of material comprising one or more transition metals (Fe, Ni, Co, Pt, Ag, Au, etc.), which can catalyze the etching reaction of carbon with H.sub.2, CO.sub.2, H.sub.2O, and/or O.sub.2. Such methods can (1) polish the carbon nanotube-containing substrate with a microscopically smooth finish, and/or (2) transfer pre-defined patterns from the hot stamp to the substrate. Such polished or patterned carbon nanotube substrates can find application as carbon nanotube electrodes, field emitters, and field emitter arrays for displays and electron sources.

  12. Effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics.

    Science.gov (United States)

    Hooshmand, Tabassom; Parvizi, Shaghayegh; Keshvad, Alireza

    2008-07-01

    The purpose of this study was to assess the effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics reinforced by leucite or lithium disilicate crystals. Forty glass ceramic disks (14-mm diameter, 2-mm thick) consisting of 20 leucite-based ceramic disks (IPS Empress) and 20 lithia disilicate-based ceramic (IPS Empress 2) were produced by hot-pressing technique. All specimens were polished and then cleaned ultrasonically in distilled water. Ten specimens of each ceramic group were then etched with 9% hydrofluoric (HF) acid gel for 2 minutes and cleaned ultrasonically again. The biaxial flexural strength was measured by the piston-on-three-ball test in a universal testing machine. Data based on ten specimens in each group were analyzed by two-way ANOVA (alpha= 0.05). Microstructure of ceramic surfaces before and after acid etching was also examined by a scanning electron microscope. The mean biaxial flexural strength values for each group tested were (in MPa): nonetched IPS Empress = 118.6 +/- 25.5; etched IPS Empress = 102.9 +/- 15.4; nonetched IPS Empress 2 = 283.0 +/- 48.5; and etched IPS Empress 2 = 250.6 +/- 34.6. The results showed that the etching process reduced the biaxial flexural strengths significantly for both ceramic types (p= 0.025). No significant interaction between the ceramic type and etching process was found (p= 0.407). From the results, it was concluded that surface HF acid etching could have a weakening effect on hot-pressed leucite or lithia disilicate-based glass ceramic systems.

  13. Introducing etch kernels for efficient pattern sampling and etch bias prediction

    Science.gov (United States)

    Weisbuch, François; Lutich, Andrey; Schatz, Jirka

    2018-01-01

    Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

  14. Active application of primer acid on acid-treated enamel: Influence on the bond effectiveness of self-etch adhesives systems.

    Science.gov (United States)

    Araújo, Cíntia Tereza Pimenta; Prieto, Lúcia Trazzi; Costa, Daiane Cristianismo; Bosso, Mariana Avalone; Coppini, Erick Kamiya; Dias, Carlos Tadeu Santos; Paulillo, Luis Alexandre Maffei Sartini

    2017-08-01

    Evaluate the composite-to-enamel bond after passive or active application of self-etching primer systems on polished or pre-etched enamel with phosphoric acid. Two self-etch adhesives systems (SEAS) were used: Clearfil SE Bond and Easy Bond. Third human molars were divided into 8 groups (N = 10). The crown of each tooth was sectioned into halves and the mesial/distal surfaces were used. The adhesives were actively or passively applied on enamel with or without prior phosphoric-acid etching. Resin composite cylinders were built after adhesive application. After stored in relative humidity for 24 hr/37°C the specimens were subjected to microshear test in universal testing a machine at a crosshead speed of 0.5 mm/minute. The results were analyzed with three-way ANOVA and the Tukey test. The enamel-etching pattern was evaluated under SEM. The 2-step SEAS system presented significantly higher adhesive bond strength means (47.37 MPa) than the 1-step (36.87 MPa). A poor enamel- etching pattern was observed in active mode showing irregular and short resin tags, however there was not compromised the bond strength. Active or passive application produced similar values of bond strength to enamel regardless of enamel pretreatment and type of SEAS. © 2017 Wiley Periodicals, Inc.

  15. Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

    Science.gov (United States)

    Ozer, Fusun; Blatz, Markus B

    2013-01-01

    Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

  16. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  17. Polish-Bulgarian-Russian, Bulgarian-Polish-Russian or Russian-Bulgarian-Polish dictionary?

    Directory of Open Access Journals (Sweden)

    Violetta Koseska-Toszewa

    2015-11-01

    Full Text Available Polish-Bulgarian-Russian, Bulgarian-Polish-Russian or Russian-Bulgarian-Polish dictionary? The trilingual dictionary (M. Duszkin, V. Koseska, J. Satoła and A. Tzoneva is being elaborated based on a working Polish-Bulgarian-Russian electronic parallel corpus authored by Maksim Duszkin, Violetta Koseska-Toszewa and Joanna Satoła-Staśkowiak, and works by A. Tzoneva. It is the first corpus comparing languages belonging to three different Slavic language groups: western, southern and eastern. Works on the dictionary are based on Gramatyka konfrontatywna bułgarsko-polska (Bulgarian-Polish confrontative grammar and the proposed there semantic-oriented interlanguage. Two types of classifiers have been introduced into the dictionary: classic and semantic. The trilingual dictionary will present a consistent and homogeneous set of facts of grammar and semantics. The Authors point out that in a traditional dictionary it is not clear for example whether aspect should be understood as imperfective / perfective form of a verb or as its meaning. Therefore in the dictionary forms and meaning are separated in a regular way. Imperfective verb form has two meanings: state and configuration of states and events culminating in state. Also perfective verb form has two meanings: event and configuration of states and events culminating in event. These meanings are described by the semantic classifiers, respectively, state and event, state1 and event1. The way of describing language units, mentioned in the article, gives a possibility to present language material (Polish, Bulgarian, Russian in any required order, hence the article’s title.

  18. Two planar polishing methods by using FIB technique: Toward ultimate top-down delayering for failure analysis

    Energy Technology Data Exchange (ETDEWEB)

    Wang, D. D., E-mail: dandan.wang@globalfoundries.com; Huang, Y. M.; Tan, P. K.; Feng, H.; Low, G. R.; Yap, H. H.; He, R.; Tan, H.; Dawood, M. K.; Zhao, Y. Z.; Lam, J.; Mai, Z. H. [GLOBALFOUNDRIES Singapore Pte. Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2015-12-15

    Presently two major limiting factors are hindering the failure analysis (FA) development during the semiconductor manufacturing process and technology improvement: (1) Impossibility of manual polishing on the edge dies due to the amenability of layer peeling off; (2) Abundant demand of multi-locations FA, especially focusing different levels of layers simultaneously. Aiming at resolving these limitations, here we demonstrate two unique high precision polishing methods by using focused ion beam (FIB) technique. One is the vertical top down chemical etching at the aimed location; the other one is the planar top down slicing. Using the FIB for delayering not only solves these problems mentioned above, but also offers significant advantages over physical planar polishing methods such as: (1) having a better control of the delayering progress, (2) enabling precisely milling at a region of interest, (3) providing the prevention of over-delayering and (4) possessing capability to capture images at the region of interest simultaneously and cut into the die directly to expose the exact failure without damaging other sections of the specimen.

  19. Study on the Effects of Corrosion Inhibitor According to the Functional Groups for Cu Chemical Mechanical Polishing in Neutral Environment

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Won; Kim, Jae Jeong [Institute of Chemical Process, Seoul National University, Seoul (Korea, Republic of)

    2015-08-15

    As the aluminum (Al) metallization process was replaced with copper (Cu), the damascene process was introduced, which required the planarization step to eliminate over-deposited Cu with Chemical Mechanical Polishing (CMP) process. In this study, the verification of the corrosion inhibitors, one of the Cu CMP slurry components, was conducted to find out the tendency regarding the carboxyl and amino functional group in neutral environment. Through the results of etch rate, removal rate, and chemical ability of corrosion inhibitors based on 1H-1,2,4-triazole as the base corrosion inhibitor, while the amine functional group presents high Cu etching ability, carboxyl functional group shows lower Cu etching ability than base-corrosion inhibitor which means that it increases passivation effect by making strong passivation layer. It implies that the corrosion inhibitor with amine functional group was proper to apply for 1st Cu CMP slurry owing to the high etch rate and with carboxyl functional group was favorable for the 2nd Cu CMP slurry due to the high Cu removal rate/dissolution rate ratio.

  20. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Science.gov (United States)

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    long etching time and will be use during analysis of detectors exposed on the International Space Station during DOSIS and MATROSHKA experiments. The help and support of Yukio Uchihori and Hisashi Kitamura during the irradiations at HIMAC is highly appreciated. This work was supported by the Polish Ministry of Science and Higher Education, grants: No N N505 261535 and No. DWM/N118/ESA/2008.

  1. Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

    Science.gov (United States)

    Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

    2016-01-01

    The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

  2. Plasma Etching of superconducting radio frequency cavity by Ar/Cl2 capacitively coupled Plasma

    Science.gov (United States)

    Upadhyay, Janardan; Popovic, Svetozar; Valente-Feliciano, Anne-Marie; Phillips, Larry; Vuskovic, Lepsha

    2016-09-01

    We are developing plasma processing technology of superconducting radio frequency (SRF) cavities. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the asymmetry was studied by changing the contour of the inner electrode. The optimized contour of the electrode based on these measurements was chosen for SRF cavity processing. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used, which previously mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. Plasma processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  3. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  4. Fabrication of Graphene by Cleaving Graphite Chemically

    Institute of Scientific and Technical Information of China (English)

    ZHAO Shu-hua; ZHAO Xiao-ting; FAN Hou-gang; YANG Li-li; ZHANG Yong-jun; YANG Jing-hai

    2011-01-01

    Graphite was chemically cleaved to graphene by Billups Reaction,and the morphologies and microstructures of graphene were characterized by SEM,Raman and AFM.The results show that the graphite was first functionalized by l-iodododecane,which led to the cleavage of the graphene layer in the graphite.The second decoration cleaved the graphite further and graphene was obtained.The heights of the graphene layer were larger than 1 nm due to the organic decoration.

  5. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  6. Laser fiber cleaving techniques: effects on tip morphology and power output.

    Science.gov (United States)

    Vassantachart, Janna M; Lightfoot, Michelle; Yeo, Alexander; Maldonado, Jonathan; Li, Roger; Alsyouf, Muhannad; Martin, Jacob; Lee, Michael; Olgin, Gaudencio; Baldwin, D Duane

    2015-01-01

    Proper cleaving of reusable laser fibers is needed to maintain optimal functionality. This study quantifies the effect of different cleaving tools on power output of the holmium laser fiber and demonstrates morphologic changes using microscopy. The uncleaved tips of new 272 μm reusable laser fibers were used to obtain baseline power transmission values at 3 W (0.6 J, 5 Hz). Power output for each of four cleaving techniques-11-blade scalpel, scribe pen cleaving tool, diamond cleaving wheel, and suture scissors-was measured in a single-blinded fashion. Dispersion of light from the fibers was compared with manufacturer specifications and rated as "ideal," "acceptable," or "unacceptable" by blinded reviewers. The fiber tips were also imaged using confocal and scanning electron microscopy. Independent samples Kruskal-Wallis test and chi square were used for statistical analysis (αtrend that was highly significant (Ptrend as the power output results (P<0.001). Microscopy showed that the scribe pen produced small defects along the fiber cladding but maintained a smooth, flat core surface. The other cleaving techniques produced defects on both the core and cladding. Cleaving techniques produce a significant effect on the initial power transmitted by reusable laser fibers. The scribe pen cleaving tool produced the most consistent and highest average power output.

  7. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  8. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  9. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  10. Influence of de/remineralization of enamel on the tensile bond strength of etch-and-rinse and self-etching adhesives.

    Science.gov (United States)

    Farias de Lacerda, Ana Julia; Ferreira Zanatta, Rayssa; Crispim, Bruna; Borges, Alessandra Bühler; Gomes Torres, Carlos Rocha; Tay, Franklin R; Pucci, Cesar Rogério

    2016-10-01

    To evaluate the bonding behavior of resin composite and different adhesives applied to demineralized or remineralized enamel. Bovine tooth crowns were polished to prepare a 5 mm2 enamel bonding area, and divided into five groups (n= 48) according to the surface treatment: CONT (sound enamel control), DEM (demineralized with acid to create white spot lesions), REMS (DEM remineralized with artificial saliva), REMF (DEM remineralized with sodium fluoride) and INF (DEM infiltrated with Icon resin infiltrant). The surface-treated teeth were divided into two subgroups (n= 24) according to adhesive type: ER (etch-and-rinse; Single Bond Universal) and SE (self-etching; Clearfill S3 Bond), and further subdivided into two categories (n= 12) according to aging process: Thermo (thermocycling) and NA (no aging). Composite blocks were made over bonded enamel and sectioned for microtensile bond strength (MTBS) testing. Data were analyzed with three-way ANOVA and post-hoc Tukey's test (α= 0.05). Significant differences were observed for enamel surface treatment (Padhesive type (PUniversal had higher MTBS than Clearfil S3 Bond; thermo-aging resulted in lower MTBS irrespective of adhesive type and surface treatment condition. The predominant failure mode was mixed for all groups. Enamel surface infiltrated with Icon does not interfere with adhesive resin bonding procedures. Treatment of enamel surface containing white spot lesions or cavities with cavosurface margins in partially-demineralized enamel can benefit from infiltration with a low viscosity resin infiltrant prior to adhesive bonding of resin composites.

  11. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  12. Self-etching adhesive on intact enamel, with and without pre-etching.

    Science.gov (United States)

    Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

    2012-05-01

    Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

  13. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  14. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

    Science.gov (United States)

    Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

    2018-02-01

    We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

  15. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  16. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  17. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

  18. Bleomycin Can Cleave an Oncogenic Noncoding RNA.

    Science.gov (United States)

    Angelbello, Alicia J; Disney, Matthew D

    2018-01-04

    Noncoding RNAs are pervasive in cells and contribute to diseases such as cancer. A question in biomedical research is whether noncoding RNAs are targets of medicines. Bleomycin is a natural product that cleaves DNA; however, it is known to cleave RNA in vitro. Herein, an in-depth analysis of the RNA cleavage preferences of bleomycin A5 is presented. Bleomycin A5 prefers to cleave RNAs with stretches of AU base pairs. Based on these preferences and bioinformatic analysis, the microRNA-10b hairpin precursor was identified as a potential substrate for bleomycin A5. Both in vitro and cellular experiments demonstrated cleavage. Importantly, chemical cleavage by bleomycin A5 in the microRNA-10b hairpin precursors occurred near the Drosha and Dicer enzymatic processing sites and led to destruction of the microRNA. Evidently, oncogenic noncoding RNAs can be considered targets of cancer medicines and might elicit their pharmacological effects by targeting noncoding RNA. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

    Energy Technology Data Exchange (ETDEWEB)

    Tavares, Henrique Dutra Simoes

    2001-07-01

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

  20. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

    Energy Technology Data Exchange (ETDEWEB)

    Tavares, Henrique Dutra Simoes

    2001-07-01

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0

  1. Influence of Etching Protocol and Silane Treatment with a Universal Adhesive on Lithium Disilicate Bond Strength.

    Science.gov (United States)

    Kalavacharla, V K; Lawson, N C; Ramp, L C; Burgess, J O

    2015-01-01

    To measure the effects of hydrofluoric acid (HF) etching and silane prior to the application of a universal adhesive on the bond strength between lithium disilicate and a resin. Sixty blocks of lithium disilicate (e.max CAD, Ivoclar Vivadent) were sectioned into coupons and polished. Specimens were divided into six groups (n=10) based on surface pretreatments, as follows: 1) no treatment (control); 2) 5% HF etch for 20 seconds (5HF); 3) 9.5% HF etch for 60 seconds (9.5HF); 4) silane with no HF (S); 5) 5% HF for 20 seconds + silane (5HFS); and 6) 9.5% HF for 60 seconds + silane (9.5HFS). All etching was followed by rinsing, and all silane was applied in one coat for 20 seconds and then dried. The universal adhesive (Scotchbond Universal, 3M ESPE) was applied onto the pretreated ceramic surface, air thinned, and light cured for 10 seconds. A 1.5-mm-diameter plastic tube filled with Z100 composite (3M ESPE) was applied over the bonded ceramic surface and light cured for 20 seconds on all four sides. The specimens were thermocycled for 10,000 cycles (5°C-50°C/15 s dwell time). Specimens were loaded until failure using a universal testing machine at a crosshead speed of 1 mm/min. The peak failure load was used to calculate the shear bond strength. Scanning electron microscopy images were taken of representative e.max specimens from each group. A two-way analysis of variance (ANOVA) determined that there were significant differences between HF etching, silane treatment, and the interaction between HF and silane treatment (puniversal adhesive.

  2. The effect of additional enamel etching and a flowable composite to the interfacial integrity of Class II adhesive composite restorations.

    Science.gov (United States)

    Belli, S; Inokoshi, S; Ozer, F; Pereira, P N; Ogata, M; Tagami, J

    2001-01-01

    This in vitro study evaluated the interfacial integrity of Class II resin composite restorations. The influence of a flowable composite and additional enamel etching was also evaluated. Deep, saucer-shaped Class II cavities were prepared in the mesial and distal proximal surfaces of 25 extracted human molars and assigned to five treatment groups. The gingival margins were extended to approximately 1 mm above the CEJ in 40 cavities and below the CEJ in 10 cavities. The prepared cavities were then restored with a self-etching primer system (Clearfil Liner Bond II) and a hybrid resin composite (Clearfil AP-X), with and without a flowable composite (Protect Liner F) and additional enamel etching with 37% phosphoric acid gel (K-etchant). After finishing, polishing and thermocycling (4 and 60 degrees C, x300), the samples were longitudinally sectioned through the restorations and resin-tooth interfaces were observed directly under a laser scanning microscope. Statistical analysis indicated that the use of a flowable composite produced significantly more (p = 0.04) gap-free resin-dentin interfaces than teeth restored without the flowable composite. However, both flowable composite and enamel etching could not prevent gap formation at enamel-resin interfaces and crack formation on enamel walls.

  3. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  4. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    Energy Technology Data Exchange (ETDEWEB)

    Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

    2013-08-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  5. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    International Nuclear Information System (INIS)

    Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

    2013-01-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  6. Plasma etching of patterned tungsten

    International Nuclear Information System (INIS)

    Franssila, S.

    1993-01-01

    Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

  7. Surface polishing of niobium for superconducting radio frequency (SRF) cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Liang [College of William and Mary, Williamsburg, VA (United States)

    2014-08-01

    Niobium cavities are important components in modern particle accelerators based on superconducting radio frequency (SRF) technology. The interior of SRF cavities are cleaned and polished in order to produce high accelerating field and low power dissipation on the cavity wall. Current polishing methods, buffered chemical polishing (BCP) and electro-polishing (EP), have their advantages and limitations. We seek to improve current methods and explore laser polishing (LP) as a greener alternative of chemical methods. The topography and removal rate of BCP at different conditions (duration, temperature, sample orientation, flow rate) was studied with optical microscopy, scanning electron microscopy (SEM), and electron backscatter diffraction (EBSD). Differential etching on different crystal orientations is the main contributor to fine grain niobium BCP topography, with gas evolution playing a secondary role. The surface of single crystal and bi-crystal niobium is smooth even after heavy BCP. The topography of fine grain niobium depends on total removal. The removal rate increases with temperature and surface acid flow rate within the rage of 0~20 °C, with chemical reaction being the possible dominate rate control mechanism. Surface flow helps to regulate temperature and avoid gas accumulation on the surface. The effect of surface flow rate on niobium EP was studied with optical microscopy, atomic force microscopy (AFM), and power spectral density (PSD) analysis. Within the range of 0~3.7 cm/s, no significant difference was found on the removal rate and the macro roughness. Possible improvement on the micro roughness with increased surface flow rate was observed. The effect of fluence and pulse accumulation on niobium topography during LP was studied with optical microscopy, SEM, AFM, and PSD analysis. Polishing on micro scale was achieved within fluence range of 0.57~0.90 J/cm2, with pulse accumulation adjusted accordingly. Larger area treatment was proved possible by

  8. Determination of total fluoride in HF/HNO3/H2SiF6 etch solutions by new potentiometric titration methods.

    Science.gov (United States)

    Weinreich, Wenke; Acker, Jörg; Gräber, Iris

    2007-03-30

    In the photovoltaic industry the etching of silicon in HF/HNO(3) solutions is a decisive process for cleaning wafer surfaces or to produce certain surface morphologies like polishing or texturization. With regard to cost efficiency, a maximal utilisation of etch baths in combination with highest quality and accuracy is strived. To provide an etch bath control realised by a replenishment with concentrated acids the main constituents of these HF/HNO(3) etch solutions including the reaction product H(2)SiF(6) have to be analysed. Two new methods for the determination of the total fluoride content in an acidic etch solution based on the precipitation titration with La(NO(3))(3) are presented within this paper. The first method bases on the proper choice of the reaction conditions, since free fluoride ions have to be liberated from HF and H(2)SiF(6) at the same time to be detected by a fluoride ion-selective electrode (F-ISE). Therefore, the sample is adjusted to a pH of 8 for total cleavage of the SiF(6)(2-) anion and titrated in absence of buffers. In a second method, the titration with La(NO(3))(3) is followed by a change of the pH-value using a HF resistant glass-electrode. Both methods provide consistent values, whereas the analysis is fast and accurate, and thus, applicable for industrial process control.

  9. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  10. Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

    Science.gov (United States)

    El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

    2018-01-01

    This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

  11. Cancer morbidity among polishers.

    Science.gov (United States)

    Järvholm, B; Thiringer, G; Axelson, O

    1982-01-01

    The mortality pattern among 86 men was determined to investigate the possible hazards of polishing steel. The men had polished steel with polishing paste for at least five years. The polishing pastes had contained tallow, beeswax, carnauba wax, alundum, carborundum, ferric oxide, and chalk. A total of 18 men had died compared with 13.3 expected. Four had died of stomach cancer compared with 0.44 expected (p less than 0.005). The mortality for other causes of death was not increased. The study does not permit any definite conclusion but indicates a possible cancer hazard among polishers. PMID:7066237

  12. Polishing large NaCl windows on a continuous polisher

    International Nuclear Information System (INIS)

    Williamson, R.

    1979-01-01

    The Helios and Antares CO 2 fusion laser systems incorporate numerous large sodium chloride windows. These must be refinished periodically, making necessary a consistent and predictable polishing capability. A continuous polisher (or annular lap) which might at Kirtland's Developmental Optical Facility. Large NaCl windows had not been polished on this type of machine. The machine has proven itself capable of producing lambda/16 figures at 633 nm (HeNe) with extremely smooth surfaces on glass. Since then, we have been working exclusively on NaCl optics. Due to different polishing parameters between NaCl and glass, and the slight solubility of the pitch in the slurry, this phase presents new problems. The work on glass will be reviewed. Results on NaCl to date will be reported. The potential of this type of machine relative to prisms, thin and irregularly shaped optics will be discussed

  13. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  14. Controlled ion track etching

    Science.gov (United States)

    George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

    2006-03-01

    It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

  15. More vertical etch profile using a Faraday cage in plasma etching

    Science.gov (United States)

    Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

    1999-05-01

    Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

  16. Device fabrication by plasma etching

    International Nuclear Information System (INIS)

    Mogab, C.J.

    1980-01-01

    Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

  17. Convergent Polishing: A Simple, Rapid, Full Aperture Polishing Process of High Quality Optical Flats & Spheres

    Science.gov (United States)

    Suratwala, Tayyab; Steele, Rusty; Feit, Michael; Dylla-Spears, Rebecca; Desjardin, Richard; Mason, Dan; Wong, Lana; Geraghty, Paul; Miller, Phil; Shen, Nan

    2014-01-01

    Convergent Polishing is a novel polishing system and method for finishing flat and spherical glass optics in which a workpiece, independent of its initial shape (i.e., surface figure), will converge to final surface figure with excellent surface quality under a fixed, unchanging set of polishing parameters in a single polishing iteration. In contrast, conventional full aperture polishing methods require multiple, often long, iterative cycles involving polishing, metrology and process changes to achieve the desired surface figure. The Convergent Polishing process is based on the concept of workpiece-lap height mismatch resulting in pressure differential that decreases with removal and results in the workpiece converging to the shape of the lap. The successful implementation of the Convergent Polishing process is a result of the combination of a number of technologies to remove all sources of non-uniform spatial material removal (except for workpiece-lap mismatch) for surface figure convergence and to reduce the number of rogue particles in the system for low scratch densities and low roughness. The Convergent Polishing process has been demonstrated for the fabrication of both flats and spheres of various shapes, sizes, and aspect ratios on various glass materials. The practical impact is that high quality optical components can be fabricated more rapidly, more repeatedly, with less metrology, and with less labor, resulting in lower unit costs. In this study, the Convergent Polishing protocol is specifically described for fabricating 26.5 cm square fused silica flats from a fine ground surface to a polished ~λ/2 surface figure after polishing 4 hr per surface on a 81 cm diameter polisher. PMID:25489745

  18. Using quantum dots to tag subsurface damage in lapped and polished glass samples

    International Nuclear Information System (INIS)

    Williams, Wesley B.; Mullany, Brigid A.; Parker, Wesley C.; Moyer, Patrick J.; Randles, Mark H.

    2009-01-01

    Grinding, lapping, and polishing are finishing processes used to achieve critical surface parameters in a variety of precision optical and electronic components. As these processes remove material from the surface through mechanical and chemical interactions, they may induce a damaged layer of cracks, voids, and stressed material below the surface. This subsurface damage (SSD) can degrade the performance of a final product by creating optical aberrations due to diffraction, premature failure in oscillating components, and a reduction in the laser induced damage threshold of high energy optics. As these defects lie beneath the surface, they are difficult to detect, and while many methods are available to detect SSD, they can have notable limitations regarding sample size and type, preparation time, or can be destructive in nature. The authors tested a nondestructive method for assessing SSD that consisted of tagging the abrasive slurries used in lapping and polishing with quantum dots (nano-sized fluorescent particles). Subsequent detection of fluorescence on the processed surface is hypothesized to indicate SSD. Quantum dots that were introduced to glass surfaces during the lapping process were retained through subsequent polishing and cleaning processes. The quantum dots were successfully imaged by both wide field and confocal fluorescence microscopy techniques. The detected fluorescence highlighted features that were not observable with optical or interferometric microscopy. Atomic force microscopy and additional confocal microscope analysis indicate that the dots are firmly embedded in the surface but do not appear to travel deep into fractures beneath the surface. Etching of the samples exhibiting fluorescence confirmed that SSD existed. SSD-free samples exposed to quantum dots did not retain the dots in their surfaces, even when polished in the presence of quantum dots.

  19. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    International Nuclear Information System (INIS)

    Aydemir, A; Akin, T

    2012-01-01

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  20. Functional Median Polish

    KAUST Repository

    Sun, Ying

    2012-08-03

    This article proposes functional median polish, an extension of univariate median polish, for one-way and two-way functional analysis of variance (ANOVA). The functional median polish estimates the functional grand effect and functional main factor effects based on functional medians in an additive functional ANOVA model assuming no interaction among factors. A functional rank test is used to assess whether the functional main factor effects are significant. The robustness of the functional median polish is demonstrated by comparing its performance with the traditional functional ANOVA fitted by means under different outlier models in simulation studies. The functional median polish is illustrated on various applications in climate science, including one-way and two-way ANOVA when functional data are either curves or images. Specifically, Canadian temperature data, U. S. precipitation observations and outputs of global and regional climate models are considered, which can facilitate the research on the close link between local climate and the occurrence or severity of some diseases and other threats to human health. © 2012 International Biometric Society.

  1. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

  2. Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

    Science.gov (United States)

    Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

    2008-01-01

    This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

  3. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  4. Functional Median Polish

    KAUST Repository

    Sun, Ying; Genton, Marc G.

    2012-01-01

    polish is demonstrated by comparing its performance with the traditional functional ANOVA fitted by means under different outlier models in simulation studies. The functional median polish is illustrated on various applications in climate science

  5. In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

    Science.gov (United States)

    Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

    2014-08-01

    To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

  6. Thermodynamics of nuclear track chemical etching

    Science.gov (United States)

    Rana, Mukhtar Ahmed

    2018-05-01

    This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

  7. CleavPredict: A Platform for Reasoning about Matrix Metalloproteinases Proteolytic Events.

    Directory of Open Access Journals (Sweden)

    Sonu Kumar

    Full Text Available CleavPredict (http://cleavpredict.sanfordburnham.org is a Web server for substrate cleavage prediction for matrix metalloproteinases (MMPs. It is intended as a computational platform aiding the scientific community in reasoning about proteolytic events. CleavPredict offers in silico prediction of cleavage sites specific for 11 human MMPs. The prediction method employs the MMP specific position weight matrices (PWMs derived from statistical analysis of high-throughput phage display experimental results. To augment the substrate cleavage prediction process, CleavPredict provides information about the structural features of potential cleavage sites that influence proteolysis. These include: secondary structure, disordered regions, transmembrane domains, and solvent accessibility. The server also provides information about subcellular location, co-localization, and co-expression of proteinase and potential substrates, along with experimentally determined positions of single nucleotide polymorphism (SNP, and posttranslational modification (PTM sites in substrates. All this information will provide the user with perspectives in reasoning about proteolytic events. CleavPredict is freely accessible, and there is no login required.

  8. Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

    Science.gov (United States)

    Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

    2018-04-01

    A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

  9. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1980-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

  10. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1979-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

  11. Health Information in Polish (polski)

    Science.gov (United States)

    ... Tools You Are Here: Home → Multiple Languages → Polish (polski) URL of this page: https://medlineplus.gov/languages/polish.html Health Information in Polish (polski) To use the sharing features on this page, ...

  12. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  13. Polish Cartographical Review

    Directory of Open Access Journals (Sweden)

    Nedjeljko Frančula

    2017-07-01

    Full Text Available The Polish Cartographical Review (PCR journal has been published in English four times a year since 2015. The journal is in open access and it is published by De Gruyter Open. It is edited by Polish scientists in collaboration with international experts.

  14. Effect of etching time and resin bond on the flexural strength of IPS e.max Press glass ceramic.

    Science.gov (United States)

    Xiaoping, Luo; Dongfeng, Ren; Silikas, Nick

    2014-12-01

    To evaluate the effect of hydrofluoric acid (HFA) etching time and resin cement bond on the flexural strength of IPS e.max(®) Press glass ceramic. Two hundred and ten bars, 25mm×3mm×2mm, were made from IPS e.max(®) Press ingots through lost-wax, hot-pressed ceramic fabrication technology and randomly divided into five groups with forty-two per group after polishing. The ceramic surfaces of different groups were etched by 9.5% hydrofluoric acid gel for 0, 20, 40, 60 and 120s respectively. Two specimens of each group were selected randomly to examine the surface roughness and 3-dimensional topography with atomic force microscope (AFM), and microstructure was analyzed by the field emission scanning electron microscope (FE-SEM). Then each group were subdivided into two subgroups (n=20). One subgroup of this material was selected to receive a thin (approximately 0.1mm) layer of resin luting agent (Variolink N) whereas the other subgroup remained unaltered. Half of subgroup's specimens were thermocycled 10,000 times before a 3-point bending test in order to determine the flexural strength. Interface between resin cement and ceramic was examined with field emission scanning electronic microscope. Roughness values increased with increasing etching time. The mean flexural strength values of group 0s, 20s, 40s, 60s and 120s were 384±33, 347±43, 330±53, 327±67 and 317±41MPa respectively. Increasing HF etching times reduced the mean flexural strength (pglass ceramic, but resin cement bonding to appropriately etched surface would strengthen the dental ceramic. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  15. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  16. Cleaved beta 2-microglobulin partially attains a conformation that has amyloidogenic features

    DEFF Research Database (Denmark)

    Heegaard, Niels H H; Roepstorff, Peter; Melberg, Steen G

    2002-01-01

    )) that as a trimmed form (Lys(58) is removed) can be demonstrated in the circulation in patients with chronic disease. An unexpected electrophoretic heterogeneity of these two cleaved variants was demonstrated by capillary electrophoresis under physiological conditions. Each separated into a fast and a slow component...... with analysis of the differences in circular dichroism, the results suggest that beta(2)-microglobulin cleaved after Lys(58) readily adopts two equilibrium conformations under native conditions. In the cleaved and trimmed beta(2)-microglobulin that appears in vivo, the less populated conformation...

  17. Polish-German bilingualism at school. A Polish perspective

    Directory of Open Access Journals (Sweden)

    Pulaczewska, Hanna

    2014-03-01

    Full Text Available This article presents the institutional frames for the acquisition of Polish literacy skills in Germany and the maintenance of Polish-German bilingualism after the repatriation of bilingual children to Poland. These processes are examined in the context of recent developments in the European domestic job market. While the European Union has placed proficiency in several languages among its educational objectives, and foreign languages have been made obligatory school subjects in all member countries, the potential advantages of internal European migrations for producing high-proficiency bilinguals are being ignored. Bilingualism resulting from migration and biculturalism enjoys little social prestige in the host countries. In Germany, there is significant regional variation in how school authorities react to challenges posed by the presence of minority languages. In many cases, the linguistic potential of many second-generation migrants and re-emigrants gets largely wasted because of lacking interest and incentives from German and Polish institutions alike.

  18. Process for etching zirconium metallic objects

    International Nuclear Information System (INIS)

    Panson, A.J.

    1988-01-01

    In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

  19. Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

    International Nuclear Information System (INIS)

    Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

    2001-01-01

    To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

  20. Polish Academy of Sciences Great Dictionary of Polish [Wielki słownik języka polskiego PAN

    Directory of Open Access Journals (Sweden)

    Piotr Žmigrodzki

    2014-12-01

    Full Text Available The paper describes a lexicographical project involving the development of the newest general dictionary of the Polish language: the Polish Academy of Sciences Great Dictionary of Polish [Wielki słownik języka polskiego PAN]. The project is coordinated by the Institute of Polish Language at the Polish Academy of Sciences and carried out in collaboration with linguists and lexicographers from several other Polish academic centres. The paper offers a brief description of the genesis of the project and the scope of information included in the dictionary, the organisation of work, the life of the dictionary on the Web as well as the plans for the future.

  1. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  2. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  3. Polish Higher Education: Intersectoral Distinctiveness

    Science.gov (United States)

    Musial, Joanna

    2014-01-01

    This study analyzes degrees of differences between the private and public sectors of Polish higher education. It finds them to be strong: Polish private institutions function very differently from Polish public institutions and these differences correspond with those found in the literature on higher education elsewhere in the world. Polish…

  4. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  5. Etching conditions and shape of tracks

    International Nuclear Information System (INIS)

    Kudo, Shuichi

    1979-01-01

    The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

  6. Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

    Science.gov (United States)

    Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2018-03-30

    The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

  7. Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

    Science.gov (United States)

    Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

    2018-02-01

    Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

  8. Surface Roughness and Gloss of Actual Composites as Polished With Different Polishing Systems.

    Science.gov (United States)

    Rodrigues-Junior, S A; Chemin, P; Piaia, P P; Ferracane, J L

    2015-01-01

    This in vitro study evaluated the effect of polishing with different polishing systems on the surface roughness and gloss of commercial composites. One hundred disk-shaped specimens (10 mm in diameter × 2 mm thick) were made with Filtek P-90, Filtek Z350 XT, Opallis, and Grandio. The specimens were manually finished with #400 sandpaper and polished by a single operator using three multistep systems (Superfix, Diamond Pro, and Sof-lex), one two-step system (Polidores DFL), and one one-step system (Enhance), following the manufacturer's instructions. The average surface roughness (μm) was measured with a surface profilometer (TR 200 Surface Roughness Tester), and gloss was measured using a small-area glossmeter (Novo-Curve, Rhopoint Instrumentation, East Sussex, UK). Data were analyzed by two-way analysis of variance and Tukey's test (α=0.05). Statistically significant differences in surface roughness were identified by varying the polishing systems (pGloss was influenced by the composites (pone-step system, Enhance, produced the lowest gloss for all composites. Surface roughness and gloss were affected by composites and polishing systems. The interaction between both also influenced these surface characteristics, meaning that a single polishing system will not behave similarly for all composites. The multistep systems produced higher gloss, while the one-step system produced the highest surface roughness and the lowest gloss of all.

  9. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  10. Polish visit

    CERN Document Server

    2003-01-01

    On 6 October, Professor Michal Kleiber, Polish Minister of Science and Chairman of the State Committee for Scientific Research, visited CERN and met both the current and designated Director General, Luciano Maiani and Robert Aymar. Professor Kleiber visited the CMS and ATLAS detector assembly halls, the underground cavern for ATLAS, and the LHC superconducting magnet string test hall. Michal Kleiber (left), Polish minister of science and Jan Krolikowski, scientist at Warsaw University and working for CMS, who shows the prototypes of the Muon Trigger board of CMS.

  11. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  12. Chemical mechanical glass polishing with cerium oxide: Effect of selected physico-chemical characteristics on polishing efficiency

    Czech Academy of Sciences Publication Activity Database

    Janoš, P.; Ederer, J.; Pilařová, V.; Henych, Jiří; Tolasz, Jakub; Milde, D.; Opletal, T.

    2016-01-01

    Roč. 362, SEP (2016), s. 114-120 ISSN 0043-1648 R&D Projects: GA MŠk(CZ) LM2015073 Institutional support: RVO:61388980 Keywords : Chemical mechanical polishing * Ceria-based polishing powders * Polishing efficienc Subject RIV: CA - Inorganic Chemistry Impact factor: 2.531, year: 2016

  13. The study of optimal conditions of electrochemical etching of tunnel electron microscopy tungsten tips

    International Nuclear Information System (INIS)

    Anguiano, E.; Aguilar, M.; Olivar, A.I.

    1996-01-01

    We present the experimental results obtained during the study made in the electrochemical etching of tunneling electron microscopy tungsten tips. The experiments was made using DC and two usual electrolytes: KOH and NaOH. For the tip preparation we used a electrochemical cell with stainless steel cathode and the tungsten wire as anode. the electrodes was introduced in a glass recipient containing the electrolytic solution. We study the effects of applied voltage, polish time, tip length and electrolyte concentration as process relevant parameters. The best condition for tip preparation was obtained with a metallurgical microscope and with a SEM.EDX and Auger analysis was made. The results shown the better tips was made with KOH as electrolyte with a limited concentration range (2-4 normal) and applied voltage (2-6 volts) (Author) 20 refs

  14. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  15. Image analysis used to count and measure etched tracks from ionizing radiation

    Science.gov (United States)

    Blanford, George E.; Schulz, Cindy K.

    1995-01-01

    We have developed techniques to use digitized scanning electron micrographs and computer image analysis programs to measure track densities in lunar soil grains and plastic dosimeters. Tracks in lunar samples are formed by highly ionizing solar energetic particles and cosmic rays during near surface exposure on the Moon. The track densities are related to the exposure conditions (depth and time). Distributions of the number of grains as a function of their track densities can reveal the modality of soil maturation. We worked on two samples identified for a consortium study of lunar weathering effects, 61221 and 67701. They were prepared by the lunar curator's staff as polished grain mounts that were etched in boiling 1 N NaOH for 6 h to reveal tracks. We determined that backscattered electron images taken at 10 percent contrast and approximately 50 percent brightness produced suitable high contrast images for analysis. We used the NIH Image program to cut out areas that were unsuitable for measurement such as edges, cracks, etc. We ascertained a gray-scale threshold of 25 to separate tracks from background. We used the computer to count everything that was two pixels or greater in size and to measure the area to obtain track densities. We found an excellent correlation with manual measurements for track densities below 1 x 10(exp 8) cm(exp -2). For track densities between 1 x 10(exp 8) cm(exp -2) to 1 x 10(exp 9) cm(exp -2) we found that a regression formula using the percentage area covered by tracks gave good agreement with manual measurements. We determined the track density distributions for 61221 and 67701. Sample 61221 is an immature sample, but not pristine. Sample 67701 is a submature sample that is very close to being fully mature. Because only 10 percent of the grains have track densities less than 10(exp 9) cm(exp -2), it is difficulty to determine whether the sample matured in situ or is a mixture of a mature and a submature soil. Although our analysis

  16. Two-year water degradation of self-etching adhesives bonded to bur ground enamel.

    Science.gov (United States)

    Abdalla, Ali I; Feilzer, Albert J

    2009-01-01

    To evaluate the effect of water storage on the microshear bond strength to ground enamel of three "all-in-one" self-etch adhesives: Futurabond DC, Clearfil S Tri Bond and Hybrid bond; a self-etching primer; Clearfil SE Bond and an etch-and-rinse adhesive system, Admira Bond. Sixty human molars were used. The root of each tooth was removed and the crown was sectioned into two halves. The convex enamel surfaces were reduced by polishing on silicon paper to prepare a flat surface that was roughened with a parallel-sided diamond bur with abundant water for five seconds. The bonding systems were applied on this surface. Prior to adhesive curing, a hollow cylinder (2.0 mm in height/0.75 mm in internal diameter) was placed on the treated surfaces and cured. A resin composite was then inserted into the tube and cured. For each adhesive, two procedures were carried out: A--the specimens were kept in water for 24 hours, then the tube was removed and the microshear bond strength was determined in a universal testing machine at a crosshead speed of 0.5 mm/minute; B--the specimens were stored in water for two-years before microshear testing. The fractured surface of the bonded specimens after each test procedure was examined by SEM. For the 24-hour control, there was no significant difference in bond strength between the tested adhesives. After two years of water storage, the bond strength of Admira Bond, Clearfil SE Bond and Futurabond DC decreased, but the reduction was not significantly different from that of 24 hours. For Clearfil S Tri Bond and Hybrid Bond, the bond strengths were significantly reduced compared to their 24-hour results.

  17. Plasma etching of electrospun polymeric nanofibres

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

    2006-10-25

    Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

  18. Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

    Science.gov (United States)

    Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

    2016-06-01

    A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

  19. Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2017-10-01

    To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

  20. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  1. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    Science.gov (United States)

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

  2. Impact of chemical polishing on surface roughness and dimensional quality of electron beam melting process (EBM) parts

    Science.gov (United States)

    Dolimont, Adrien; Rivière-Lorphèvre, Edouard; Ducobu, François; Backaert, Stéphane

    2018-05-01

    Additive manufacturing is growing faster and faster. This leads us to study the functionalization of the parts that are produced by these processes. Electron Beam melting (EBM) is one of these technologies. It is a powder based additive manufacturing (AM) method. With this process, it is possible to manufacture high-density metal parts with complex topology. One of the big problems with these technologies is the surface finish. To improve the quality of the surface, some finishing operations are needed. In this study, the focus is set on chemical polishing. The goal is to determine how the chemical etching impacts the dimensional accuracy and the surface roughness of EBM parts. To this end, an experimental campaign was carried out on the most widely used material in EBM, Ti6Al4V. Different exposure times were tested. The impact of these times on surface quality was evaluated. To help predicting the excess thickness to be provided, the dimensional impact of chemical polishing on EBM parts was estimated. 15 parts were measured before and after chemical machining. The improvement of surface quality was also evaluated after each treatment.

  3. Functional study of elafin cleaved by Pseudomonas aeruginosa metalloproteinases.

    LENUS (Irish Health Repository)

    Guyot, Nicolas

    2010-06-01

    Elafin is a 6-kDa innate immune protein present at several epithelial surfaces including the pulmonary epithelium. It is a canonical protease inhibitor of two neutrophil serine proteases [neutrophil elastase (NE) and proteinase 3] with the capacity to covalently bind extracellular matrix proteins by transglutamination. In addition to these properties, elafin also possesses antimicrobial and immunomodulatory activities. The aim of the present study was to investigate the effect of Pseudomonas aeruginosa proteases on elafin function. We found that P. aeruginosa PAO1-conditioned medium and two purified Pseudomonas metalloproteases, pseudolysin (elastase) and aeruginolysin (alkaline protease), are able to cleave recombinant elafin. Pseudolysin was shown to inactivate the anti-NE activity of elafin by cleaving its protease-binding loop. Interestingly, antibacterial properties of elafin against PAO1 were found to be unaffected after pseudolysin treatment. In contrast to pseudolysin, aeruginolysin failed to inactivate the inhibitory properties of elafin against NE. Aeruginolysin cleaves elafin at the amino-terminal Lys6-Gly7 peptide bond, resulting in a decreased ability to covalently bind purified fibronectin following transglutaminase activity. In conclusion, this study provides evidence that elafin is susceptible to proteolytic cleavage at alternative sites by P. aeruginosa metalloproteinases, which can affect different biological functions of elafin.

  4. The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

    Science.gov (United States)

    Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

  5. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  6. Plasma etching: Yesterday, today, and tomorrow

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  7. Plasma etching: Yesterday, today, and tomorrow

    International Nuclear Information System (INIS)

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-01-01

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  8. [Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

    Science.gov (United States)

    Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

    2009-03-01

    To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

  9. Effect of etching with distinct hydrofluoric acid concentrations on the flexural strength of a lithium disilicate-based glass ceramic.

    Science.gov (United States)

    Prochnow, Catina; Venturini, Andressa B; Grasel, Rafaella; Bottino, Marco C; Valandro, Luiz Felipe

    2017-05-01

    This study examined the effects of distinct hydrofluoric acid concentrations on the mechanical behavior of a lithium disilicate-based glass ceramic. Bar-shaped specimens were produced from ceramic blocks (e.max CAD, Ivoclar Vivadent). The specimens were polished, chamfered, and sonically cleaned in distilled water. The specimens were randomly divided into five groups (n = 23). The HF1, HF3, HF5, and HF10 specimens were etched for 20 s with acid concentrations of 1%, 3%, 5%, and 10%, respectively, while the SC (control) sample was untreated. The etched surfaces were evaluated using a scanning electron microscope and an atomic force microscope. Finally, the roughness was measured, and 3-point bending flexural tests were performed. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey's test (α = 0.05). The Weibull modulus and characteristic strength were also determined. No statistical difference in the roughness and flexural strength was determined among the groups. The structural reliabilities (Weilbull moduli) were similar for the tested groups; however, the characteristic strength of the HF1 specimen was greater than that of the HF10 specimen. Compared with the untreated ceramic, the surface roughness and flexural strength of the ceramic were unaffected upon etching, regardless of the acid concentration. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 885-891, 2017. © 2016 Wiley Periodicals, Inc.

  10. The chemical and electrochemical anisotropic etching of silicon

    International Nuclear Information System (INIS)

    Dixon, E.

    1997-06-01

    The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

  11. Plasma etching of niobium-SiO/sub x/ layers

    International Nuclear Information System (INIS)

    Schelle, D.; Tiller, H.J.

    1986-01-01

    CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

  12. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    Science.gov (United States)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  13. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  14. Evaluation of surface topography of zirconia ceramic after Er:YAG laser etching.

    Science.gov (United States)

    Turp, Volkan; Akgungor, Gokhan; Sen, Deniz; Tuncelli, Betul

    2014-10-01

    The aim of this study is to evaluate the effect of Erbium: yttrium-aluminum-garnet (Er:YAG) laser with different pulse lengths on the surface roughness of zirconia ceramic and airborne particle abrasion. Er:YAG laser treatment is expected to be an alternative surface treatment method for zirconia ceramics; however, the parameters and success of the application are not clear. One hundred and forty zirconia discs (diameter, 10 mm; thickness, 1.2 mm) were prepared by a computer-aided design and computer-aided manufacturing (CAD/CAM) system according to the manufacturer's instructions. Specimens were divided into 14 groups (n=10). One group was left as polished control, one group was air-particle abraded with Al2O3 particles. For the laser treatment groups, laser irradiation was applied at three different pulse energy levels (100, 200, and 300 mJ) and for each energy level at four different pulse lengths; 50, 100, 300, and 600 μs. Surface roughness was evaluated with an optical profilometer and specimens were evaluated with scanning electron microscopy (SEM). Data was analyzed with one way ANOVA and Tukey multiple comparison tests (α=0.05). For the 100 and 200 mJ laser etching groups, 50 and 100 μs laser duration resulted in significantly higher surface roughness compared with air-particle abrasion (p0.05). For the 300 mJ laser etching groups; there was no statistically significant difference among the Ra values of 50 μs, 100 μs, 300 μs, 600 μs, and air-particle abrasion groups (p>0.05). In order to increase surface roughness and promote better bonding to resin luting agents, Er:YAG laser etching may be an alternative to air-particle abrasion for zirconia ceramics. However, high levels of pulse energy and longer pulse length may have an adverse effect on micromechanical locking properties, because of a decrease in surface roughness.

  15. UV laser cleaving of air-polymer structured fibre

    NARCIS (Netherlands)

    Canning, J.; Buckley, E.; Groothoff, N.; Luther-Davies, B.; Zagari, J.

    2002-01-01

    The demonstration of ultraviolet (UV) laser ablation technique for cleaving of air-polymer structure (APF) fiber was presented. ArF exciplex laser with an unstable resonator cavity with pulse-to-pulse intensity fluctuations was used for the study. The thermal diffusion time across a 200 µm diameter

  16. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

    Science.gov (United States)

    Evans, Laura J.; Beheim, Glenn M.

    2006-01-01

    High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

  17. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  18. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  19. Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

    Science.gov (United States)

    Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

    To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

  20. The tourism attractiveness of Polish libraries

    OpenAIRE

    Miedzińska, Magdalena; Tanaś, Sławoj

    2009-01-01

    The aim of the article is to draw the reader's attention to the tourism attractiveness of renowned Polish libraries. These have attained a tourism function due to tourism exploration and penetration, but remain in the shadow of other Polish cultural assets. The article outlines the historical geography of Polish libraries, an analysis of tourism assets and an attempt to classify and catalogue libraries in Poland.

  1. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  2. Dry etching of thin chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

  3. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  4. Bulk and track etching of PET studied by spectrophotometer

    International Nuclear Information System (INIS)

    Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

    2004-01-01

    UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

  5. Influence of previous acid etching on bond strength of universal adhesives to enamel and dentin.

    Science.gov (United States)

    Torres, Carlos Rocha Gomes; Zanatta, Rayssa Ferreira; Silva, Tatiane Josefa; Huhtala, Maria Filomena Rocha Lima; Borges, Alessandra Bühler

    2017-01-01

    The objective of this study was to evaluate the effect of acid pretreatment on the bond strength of composite resin bonded to enamel and dentin with 2 different universal self-etching adhesives. The null hypothesis was that the acid treatment performed prior to adhesive application would not significantly change the bond strength to enamel or dentin for either universal adhesive tested. A sample of 112 bovine incisors were selected and embedded in acrylic resin. Half were ground until a flat enamel surface was obtained, and the other half were polished until a 6 × 6-mm area of dentin was exposed, resulting into 2 groups (n = 56). The enamel and dentin groups were divided into 2 subgroups according to the adhesive system applied: Futurabond U or Scotchbond Universal. Each of these subgroups was divided into 2 additional subgroups (n = 14); 1 subgroup received phosphoric acid pretreatment, and 1 subgroup did not. The bond strength was assessed with a microtensile test. Data from enamel and dentin specimens were analyzed separately using 1-way analysis of variance. The acid pretreatment did not significantly change the bond strength of the adhesives tested, either to enamel (P = 0.4161) or to dentin (P = 0.4857). The acid etching pretreatment did not affect the bond strength to dentin and enamel when the tested universal multipurpose adhesive systems were used.

  6. Detection of paint polishing defects

    Science.gov (United States)

    Rebeggiani, S.; Wagner, M.; Mazal, J.; Rosén, B.-G.; Dahlén, M.

    2018-06-01

    Surface finish plays a major role on perceived product quality, and is the first thing a potential buyer sees. Today end-of-line repairs of the body of cars and trucks are inevitably to secure required surface quality. Defects that occur in the paint shop, like dust particles, are eliminated by manual sanding/polishing which lead to other types of defects when the last polishing step is not performed correctly or not fully completed. One of those defects is known as ‘polishing roses’ or holograms, which are incredibly hard to detect in artificial light but are clearly visible in sunlight. This paper will present the first tests with a measurement set-up newly developed to measure and analyse polishing roses. The results showed good correlations to human visual evaluations where repaired panels were estimated based on the defects’ intensity, severity and viewing angle.

  7. Tooth polishing: The current status

    Directory of Open Access Journals (Sweden)

    Madhuri Alankar Sawai

    2015-01-01

    Full Text Available Healthy teeth and gums make a person feel confident and fit. As people go about their daily routines and with different eating and drinking habits, the tooth enamel turns yellowish or gets stained. Polishing traditionally has been associated with the prophylaxis procedure in most dental practices, which patients know and expect. However, with overzealous use of polishing procedure, there is wearing of the superficial tooth structure. This would lead to more accumulation of local deposits. Also, it takes a long time for the formation of the fluoride-rich layer of the tooth again. Hence, now-a-days, polishing is not advised as a part of routine oral prophylaxis procedure but is done selectively based on the patients′ need. The article here, gives an insight on the different aspects of the polishing process along with the different methods and agents used for the same.

  8. Polish Industry and Art at CERN

    CERN Multimedia

    2000-01-01

    On 17 October 2000 the second Polish industrial and technological exhibition opened at CERN. The first one was held five years ago and nine of the companies that were present then have come back again this year. Six of those companies were awarded contracts with CERN in 1995. Three Polish officials were present at the Opening Ceremony today: Mrs Malgorzata Kozlowska, Under-secretary of State in the State Committee for Scientific Research, Mr Henryk Ogryczak, Under-secretary of State in Ministry of Economy and Prof. Jerzy Niewodniczanski, President of National Atomic Energy Agency. Professor Luciano Maiani welcomed the Polish delegation to CERN and stressed the important contribution of Polish scientists and industrialists to the work of the laboratory. Director General Luciano Maiani (back left) and head of SPL division Karl-Heinz Kissler (back right) visit the Poland at CERN exhibition… The exhibition offers Polish companies the opportunity to establish professional contacts with CERN. Nineteen companies...

  9. An efficiently cleaved HIV-1 clade C Env selectively binds to neutralizing antibodies.

    Directory of Open Access Journals (Sweden)

    Saikat Boliar

    Full Text Available An ideal HIV-1 Env immunogen is expected to mimic the native trimeric conformation for inducing broadly neutralizing antibody responses. The native conformation is dependent on efficient cleavage of HIV-1 Env. The clade B isolate, JRFL Env is efficiently cleaved when expressed on the cell surface. Here, for the first time, we report the identification of a native clade C Env, 4-2.J41 that is naturally and efficiently cleaved on the cell surface as confirmed by its biochemical and antigenic characteristics. In addition to binding to several conformation-dependent neutralizing antibodies, 4-2.J41 Env binds efficiently to the cleavage-dependent antibody PGT151; thus validating its native cleaved conformation. In contrast, 4-2.J41 Env occludes non-neutralizing epitopes. The cytoplasmic-tail of 4-2.J41 Env plays an important role in maintaining its conformation. Furthermore, codon optimization of 4-2.J41 Env sequence significantly increases its expression while retaining its native conformation. Since clade C of HIV-1 is the prevalent subtype, identification and characterization of this efficiently cleaved Env would provide a platform for rational immunogen design.

  10. Polish polar research (outline

    Directory of Open Access Journals (Sweden)

    Krzysztof Ludwik Birkenmajer

    2017-12-01

    Full Text Available The article describes Polish research and discoveries in the Arctic and the Antarctic since the 19th century. The author is a geologist and since 1956 has been engaged in scientific field research on Spitsbergen, Greenland and Antarctica (23 expeditions. For many years chairman of the Committee on Polar Research of the Polish Academy of Sciences, he is now its Honorary Chairman.

  11. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Science.gov (United States)

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

  12. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  13. Conformal polishing approach: Tool footprint analysis

    Directory of Open Access Journals (Sweden)

    José A Dieste

    2016-02-01

    Full Text Available Polishing process is one of the most critical manufacturing processes during a metal part production because it determines the final quality of the product. Free-form surface polishing is a handmade process with lots of rejected parts, scrap generation and time and energy consumption. Two different research lines are being developed: prediction models of the final surface quality parameters and an analysis of the amount of material removed depending on the polishing parameters to predict the tool footprint during the polishing task. This research lays the foundations for a future automatic conformal polishing system. It is based on rotational and translational tool with dry abrasive in the front mounted at the end of a robot. A tool to part concept is used, useful for large or heavy workpieces. Results are applied on different curved parts typically used in tooling industry, aeronautics or automotive. A mathematical model has been developed to predict the amount of material removed in function of polishing parameters. Model has been fitted for different abrasives and raw materials. Results have shown deviations under 20% that implies a reliable and controllable process. Smaller amount of material can be removed in controlled areas of a three-dimensional workpiece.

  14. Cleaving of TOPAS and PMMA microstructured polymer optical fibers: Core-shift and statistical quality optimization

    DEFF Research Database (Denmark)

    Stefani, Alessio; Nielsen, Kristian; Rasmussen, Henrik K.

    2012-01-01

    We fabricated an electronically controlled polymer optical fiber cleaver, which uses a razor-blade guillotine and provides independent control of fiber temperature, blade temperature, and cleaving speed. To determine the optimum cleaving conditions of microstructured polymer optical fibers (m......POFs) with hexagonal hole structures we developed a program for cleaving quality optimization, which reads in a microscope image of the fiber end-facet and determines the core-shift and the statistics of the hole diameter, hole-to-hole pitch, hole ellipticity, and direction of major ellipse axis. For 125μm in diameter...

  15. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  16. Zerodur polishing process for high surface quality and high efficiency

    International Nuclear Information System (INIS)

    Tesar, A.; Fuchs, B.

    1992-08-01

    Zerodur is a glass-ceramic composite importance in applications where temperature instabilities influence optical and mechanical performance, such as in earthbound and spaceborne telescope mirror substrates. Polished Zerodur surfaces of high quality have been required for laser gyro mirrors. Polished surface quality of substrates affects performance of high reflection coatings. Thus, the interest in improving Zerodur polished surface quality has become more general. Beyond eliminating subsurface damage, high quality surfaces are produced by reducing the amount of hydrated material redeposited on the surface during polishing. With the proper control of polishing parameters, such surfaces exhibit roughnesses of < l Angstrom rms. Zerodur polishing was studied to recommend a high surface quality polishing process which could be easily adapted to standard planetary continuous polishing machines and spindles. This summary contains information on a polishing process developed at LLNL which reproducibly provides high quality polished Zerodur surfaces at very high polishing efficiencies

  17. Lysenko affair and Polish botany.

    Science.gov (United States)

    Köhler, Piotr

    2011-01-01

    This article describes the slight impact of Lysenkoism upon Polish botany. I begin with an account of the development of plant genetics in Poland, as well as the attitude of scientists and the Polish intelligentsia toward Marxist philosophy prior to the World War II. Next I provide a short history of the introduction and demise of Lysenkoism in Polish science, with a focus on events in botany, in context with key events in Polish science from 1939 to 1958. The article outlines the little effects of Lysenkoism upon botanists and their research, as well as how botanists for the most part rejected what was often termed the "new biology." My paper shows that though Lysenko's theories received political support, and were actively promoted by a small circle of scientists and Communist party activists, they were never accepted by most botanists. Once the political climate in Poland altered after the events of 1956, Lysenko's theories were immediately abandoned.

  18. Intact and cleaved uPAR forms: diagnostic and prognostic value in cancer

    DEFF Research Database (Denmark)

    Rasch, M.G.; Lund, I.K.; Hoyer-Hansen, G.

    2008-01-01

    identified in tissue and body fluids. It is well-established, that the total amount of all uPAR forms is a strong prognostic marker in different types of cancer. Using immunoassays, measuring the individual uPAR forms, has revealed that the cleaved uPAR forms are even stronger prognostic markers and have...... diagnostic utility. This review will focus on the mechanism of uPAR cleavage and the functional consequences, as well as the clinical applicability of cleaved uPAR forms Udgivelsesdato: 2008...

  19. A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

    Science.gov (United States)

    Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

    2017-08-01

    The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

  20. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  1. Chemical polishing of partially oxidized T-111 alloy

    International Nuclear Information System (INIS)

    Teaney, P.E.

    1974-01-01

    The specimens were pressure-mounted in Bakelite and ground through 600 grit on silicon carbide papers. The specimens were rough-polished on a vibratory polisher for 4 to 6 h, using a water slurry of one micron alumina on Texmet, followed by 0.3-μ alumina on Texmet overnight. Final polishing was accomplished by continuous swabbing with a chemical polish. A chemical polish consisting of ten parts lactic acid, four parts nitric acid, and four parts hydrofluoric acid worked well for the T-111 parent material specimens; however, in the partially oxidized specimens, considerable pitting and staining occurred in the oxygen-affected zone and in the transition zone between the oxygen-affected zone and the parent material. A chemical polish was developed for the partially oxidized specimens by adjusting the ratio of the acids to ten parts lactic acid, two parts nitric acid, and two parts hydrofluoric acid. This slowed the chemical attack on the oxygen-affected zone considerably and, with continuous swabbing, the pitting and stain could be avoided. The specimens were rinsed and checked occasionally on the metallograph to determine when the proper polish had been obtained. Some specimens required intermittent polishing times up to 1 / 2 hour. No relationship could be established between the oxygen content of the specimen and the time required for chemical polishing in the partially oxidized specimens. However, the microstructure of the transition zone was the most difficult to obtain, and specimens with uniform reaction zones across the width of the specimen polished quicker than those with the transition zone

  2. Graphite Composite Panel Polishing Fixture

    Science.gov (United States)

    Hagopian, John; Strojny, Carl; Budinoff, Jason

    2011-01-01

    The use of high-strength, lightweight composites for the fixture is the novel feature of this innovation. The main advantage is the light weight and high stiffness-to-mass ratio relative to aluminum. Meter-class optics require support during the grinding/polishing process with large tools. The use of aluminum as a polishing fixture is standard, with pitch providing a compliant layer to allow support without deformation. Unfortunately, with meter-scale optics, a meter-scale fixture weighs over 120 lb (.55 kg) and may distort the optics being fabricated by loading the mirror and/or tool used in fabrication. The use of composite structures that are lightweight yet stiff allows standard techniques to be used while providing for a decrease in fixture weight by almost 70 percent. Mounts classically used to support large mirrors during fabrication are especially heavy and difficult to handle. The mount must be especially stiff to avoid deformation during the optical fabrication process, where a very large and heavy lap often can distort the mount and optic being fabricated. If the optic is placed on top of the lapping tool, the weight of the optic and the fixture can distort the lap. Fixtures to support the mirror during fabrication are often very large plates of aluminum, often 2 in. (.5 cm) or more in thickness and weight upwards of 150 lb (68 kg). With the addition of a backing material such as pitch and the mirror itself, the assembly can often weigh over 250 lb (.113 kg) for a meter-class optic. This innovation is the use of a lightweight graphite panel with an aluminum honeycomb core for use as the polishing fixture. These materials have been used in the aerospace industry as structural members due to their light weight and high stiffness. The grinding polishing fixture consists of the graphite composite panel, fittings, and fixtures to allow interface to the polishing machine, and introduction of pitch buttons to support the optic under fabrication. In its

  3. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  4. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    International Nuclear Information System (INIS)

    Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

    2016-01-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  5. Modeling of the angular dependence of plasma etching

    International Nuclear Information System (INIS)

    Guo Wei; Sawin, Herbert H.

    2009-01-01

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  6. Cleavings: Critical Losses in the Politics of Gain

    Directory of Open Access Journals (Sweden)

    Michael Davidson

    2016-05-01

    Full Text Available Many of Emily Dickinson's best known poems deal with the loss of sight, based on her own experiences with temporary blindness in the mid 1860s, but they are less about the absence of sight than about how she experiences the limits of consciousness: "I could not see to see." She probed the loss of sensation for what it could teach her about what is most familiar—and thus invisible. Using poems by Emily Dickinson and recent work in cultural and queer theory, this essay explores the fine line between "gain" and "loss" in disability studies. Using the author's experience of sudden hearing loss, "Cleavings" argues that recent claims for "deaf gain" have vaunted possibilities of cultural inclusiveness to the exclusion of affective realms of frustration, loss, and failure that are seldom acknowledged experiences of deaf and hard-of-hearing persons. While endorsing the general thrust of deaf gain and its implications for the larger context of disability, "Cleavings" argues for a more critical understanding of loss in the politics of gain.

  7. Effects of the Addictives on Etching Characteristics of Aluminum Foil

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

    2001-01-01

    The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

  8. Characterization of etch pits found on a large-grain bulk niobium superconducting radio-frequency resonant cavity

    Science.gov (United States)

    Zhao, Xin; Ciovati, G.; Bieler, T. R.

    2010-12-01

    The performance of superconducting radio-frequency (SRF) resonant cavities made of bulk niobium is limited by nonlinear localized effects. Surface analysis of regions of higher power dissipation is thus of intense interest. Such areas (referred to as “hotspots”) were identified in a large-grain single-cell cavity that had been buffered-chemical polished and dissected for examination by high resolution electron microscopy, electron backscattered diffraction microscopy (EBSD), and optical microscopy. Pits with clearly discernible crystal facets were observed in both “hotspot” and “coldspot” specimens. The pits were found in-grain, at bicrystal boundaries, and on tricrystal junctions. They are interpreted as etch pits induced by crystal defects (e.g. dislocations). All coldspots examined had a qualitatively lower density of etch pits or relatively smooth tricrystal boundary junctions. EBSD mapping revealed the crystal orientation surrounding the pits. Locations with high pit density are correlated with higher mean values of the local average misorientation angle distributions, indicating a higher geometrically necessary dislocation content. In addition, a survey of the samples by energy dispersive x-ray analysis did not show any significant contamination of the samples’ surface. The local magnetic field enhancement produced by the sharp-edge features observed on the samples is not sufficient to explain the observed degradation of the cavity quality factor, which starts at peak surface magnetic field as low as 20 mT.

  9. APS 3D: a new benchmark in aspherical polishing

    Science.gov (United States)

    Gauch, Daniel; Mikulic, Dalibor; Veit, Christian

    2017-10-01

    The APS 3D system performs polishing and form correction in one step in order to reduce overall process time, reduce the number of polishing steps required and eliminate the need for highly skilled operators while providing a repeatable polishing process. This new 3D Polishing system yields better surface quality, and a better slope error, automatically determining the optimum speeds, feed rates and polish pressures to achieve a deterministic process based on the required quality parameters input by the operator. The process flow is always the same to ensure consistent quality and target quality values are defined before polishing begins.

  10. Ion-beam etching of ramps in thin film heterostructures

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

    2002-01-01

    Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

  11. Polish Americans. Second, Revised Edition.

    Science.gov (United States)

    Lopata, Helen Znaniecka

    This book examines Polonia, the Polish ethnic community in America created by three giant waves of immigration between 1880 and 1990. The complicated history of this ethnic group is reflected in the lives of increasing numbers of Polish Americans, including recent immigrants brought by political and economic changes, as they achieve middle class…

  12. Levels of alpha- and beta-secretase cleaved amyloid precursor protein in the cerebrospinal fluid of Alzheimer's disease patients

    DEFF Research Database (Denmark)

    Sennvik, K; Fastbom, J; Blomberg, M

    2000-01-01

    Alternative cleavage of the amyloid precursor protein (APP) results in generation and secretion of both soluble APP (sAPP) and beta-amyloid (Abeta). Abeta is the main component of the amyloid depositions in the brains of Alzheimer's disease (AD) patients. Using Western blotting, we compared...... the levels of alpha-secretase cleaved sAPP, beta-secretase cleaved sAPP and total sAPP, in cerebrospinal fluid (CSF) from 13 sporadic AD patients and 13 healthy controls. Our findings show significant amounts of beta-secretase cleaved sAPP in CSF. There was no statistically significant difference...... in the levels of beta-secretase cleaved sAPP between AD patients and controls. The levels of alpha-secretase cleaved sAPP and total sAPP were, however, found to be significantly lower in the AD patients than in the controls....

  13. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  14. Experimental Polish-Lithuanian Corpus with the Semantic Annotation Elements

    Directory of Open Access Journals (Sweden)

    Danuta Roszko

    2015-06-01

    Full Text Available Experimental Polish-Lithuanian Corpus with the Semantic Annotation Elements In the article the authors present the experimental Polish-Lithuanian corpus (ECorpPL-LT formed for the idea of Polish-Lithuanian theoretical contrastive studies, a Polish-Lithuanian electronic dictionary, and as help for a sworn translator. The semantic annotation being brought into ECorpPL-LT is extremely useful in Polish-Lithuanian contrastive studies, and also proves helpful in translation work.

  15. Directional Etching of Silicon by Silver Nanostructures

    Science.gov (United States)

    Sharma, Pradeep; Wang, Yuh-Lin

    2011-02-01

    We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

  16. Graphene Visualizes the Ion Distribution on Air-Cleaved mica

    NARCIS (Netherlands)

    Bampoulis, Pantelis; Sotthewes, Kai; Siekman, Martin Herman; Zandvliet, Henricus J.W.; Poelsema, Bene

    2017-01-01

    The distribution of potassium (K+) ions on air-cleaved mica is important in many interfacial phenomena such as crystal growth, self-assembly and charge transfer on mica. However, due to experimental limitations to nondestructively probe single ions and ionic domains, their exact lateral organization

  17. Assessing operability of a novel polisher arrangement using MMS

    International Nuclear Information System (INIS)

    Shor, S.W.W.

    1987-01-01

    A condensate polisher is intended to remove both particulate matter and ionic material from the condensate. Condensate polishers have normally been placed directly in the condensate system downstream of the condensate pumps. This inline location has certain disadvantages. These disadvantages are discussed. Placing the polisher in a sidestream location, where water is removed from the condensate system, pumped through the polisher, and then returned to the condensate system provides a solution to these disadvantages. Several possible types of sidestream installations is described. This has a polisher taking unpolished condensate from one compartment from one compartment of a divided hotwell in a specially modified condenser and returning polished condensate to the other compartment. The polisher is supplied by its own dedicated pumps, which have a head requirement sufficient only to overcome the pressure drop through the polisher circuit at a flow rate of 110% of maximum condensate flow. This concept is very attractive but has not yet been tested even though it is being installed in several new units. A simulation was, therefore, performed using MMS to provide confidence that this particular sidestream polisher arrangement was operationally viable

  18. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    Directory of Open Access Journals (Sweden)

    Shiva Alavi

    2014-01-01

    Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

  19. Optimization of silver-assisted nano-pillar etching process in silicon

    Science.gov (United States)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  20. In-plane deeply-etched optical MEMS notch filter with high-speed tunability

    International Nuclear Information System (INIS)

    Sabry, Yasser M; Eltagoury, Yomna M; Shebl, Ahmed; Khalil, Diaa; Soliman, Mostafa; Sadek, Mohamed

    2015-01-01

    Notch filters are used in spectroscopy, multi-photon microscopy, fluorescence instrumentation, optical sensors and other life science applications. One type of notch filter is based on a fiber-coupled Fabry–Pérot cavity, which is formed by a reflector (external mirror) facing a dielectric-coated end of an optical fiber. Tailoring this kind of optical filter for different applications is possible because the external mirror has fewer mechanical and optical constraints. In this paper we present optical modeling and implementation of a fiber-coupled Fabry–Pérot filter based on dielectric-coated optical fiber inserted into a micromachined fiber groove facing a metallized micromirror, which is driven by a high-speed MEMS actuator. The optical MEMS chip is fabricated using deep reactive ion etching (DRIE) technology on a silicon on insulator wafer, where the optical axis is parallel to the substrate (in-plane) and the optical/mechanical components are self-aligned by the photolithographic process. The DRIE etching depth is 150 μm, chosen to increase the micromirror optical throughput and improving the out-of-plane stiffness of the MEMS actuator. The MEMS actuator type is closing-gap, while its quality factor is almost doubled by slotting the fixed plate. A low-finesse Fabry–Pérot interferometer is formed by the metallized surface of the micromirror and a cleaved end of a standard single-mode fiber, for characterization of the MEMS actuator stroke and resonance frequency. The actuator achieves a travel distance of 800 nm at a resonance frequency of 89.9 kHz. The notch filter characteristics were measured using an optical spectrum analyzer, and the filter exhibits a free spectral range up to 100 nm and a notch rejection ratio up to 20 dB around a wavelength of 1300 nm. The presented device provides batch processing and low-cost production of the filter. (paper)

  1. Laser polishing of additive manufactured Ti alloys

    Science.gov (United States)

    Ma, C. P.; Guan, Y. C.; Zhou, W.

    2017-06-01

    Laser-based additive manufacturing has attracted much attention as a promising 3D printing method for metallic components in recent years. However, surface roughness of additive manufactured components has been considered as a challenge to achieve high performance. In this work, we demonstrate the capability of fiber laser in polishing rough surface of additive manufactured Ti-based alloys as Ti-6Al-4V and TC11. Both as-received surface and laser-polished surfaces as well as cross-section subsurfaces were analyzed carefully by White-Light Interference, Confocal Microscope, Focus Ion Beam, Scanning Electron Microscopy, Energy Dispersive Spectrometer, and X-ray Diffraction. Results revealed that as-received Ti-based alloys with surface roughness more than 5 μm could be reduce to less than 1 μm through laser polishing process. Moreover, microstructure, microhardness and wear resistance of laser-polished zone was investigated in order to examine the thermal effect of laser polishing processing on the substrate of additive manufactured Ti alloys. This proof-of-concept process has the potential to effectively improve the surface roughness of additive manufactured metallic alloy by local polishing method without damage to the substrate.

  2. Influence factors on etching rate of PET nuclear pore membrane

    International Nuclear Information System (INIS)

    Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

    2014-01-01

    Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

  3. Effect of caries-affected dentin on one-step universal and multi-step etch-and-rinse adhesives’ bond strength

    Directory of Open Access Journals (Sweden)

    Clecila MÜLLER

    2017-10-01

    Full Text Available Abstract Objective To evaluate the influence of caries-affected dentin on bond strength of a universal one-step and a multi-step etch-and-rinse adhesive system. Material and method Enamel of 60 third human molars with and without caries was removed to expose dentin. The teeth were randomly assigned to six groups: Single Bond Universal (3M ESPE, St. Paul, MN, USA in etch-and-rinse and in self-etch mode and Prime & Bond NT (Dentsply Co, Konstanz, Germany, all on sound and caries-affected dentin. Smear layer of the 30 sound dentin specimens was standardized by polishing with 600-grit SiC paper under water cooling. Residual infected dentin of the 30 caries-affected specimens was removed with a number 4 CA carbide bur until no caries smooth tissue was detectable by tactile-visual inspection. Cylinders of a light cured composite resin (Filtek Z350 XT, 3M ESPE were built up using starch tubes and microshear test was performed until failure. The data was analyzed by one-way ANOVA and Tukey’s post hoc test. Result Significant differences in microshear bond strength (μSBS were observed for the caries-affected groups, but not for sound dentin. The μSBS of Single Bond Universal were not influenced by the application protocol on sound dentin, however they were lower in the caries-affected group with both application protocols. The μSBS for Prime & Bond NT was not influenced by the dentin conditions. Conclusion Caries-affected dentin decrease in bond strength of Single Bond Universal in comparison to sound dentin. The bond strength of Prime & Bond NT was not altered by substrate conditions.

  4. Optimization of silver-assisted nano-pillar etching process in silicon

    International Nuclear Information System (INIS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-01-01

    Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert ® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H 2 O 2 ), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H 2 O 2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time

  5. Optimization of silver-assisted nano-pillar etching process in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

    2015-12-01

    Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

  6. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  7. Production of rare earth polishing powders in Russia

    International Nuclear Information System (INIS)

    Kosynkin, V.D.; Ivanov, E.N.; Kotrekhov, V.A.; Shtutza, M.G.; Grabko, A.I.

    1998-01-01

    Full text: Russia is a potent producer of polishing powders made of rare earth material presented as an extensive and well developed base. Considering the reserves, the facilities predisposition and the polishing agent (cerium dioxide) content the chief mineral source is loparite, apatite and monazite. The production of rare earth polishing powders is based on specially developed continuous technological processes, corrosion-proof equipment, ensuring a high and stable production quality. A special attention is paid to the radiation safety of the powders. The initial material for the rare earth polishing powders based on loparite is the fusion cake of rare earth chlorides obtained at that mineral chlorination. The technology of the polishing powder production from the REE fusion cake includes the following stages: dissolution of the REE fusion cake chlorides; - thorough cleaning of the REE fusion cake chlorides from radioactive and non-rare-earth impurities; chemical precipitation of REE carbonates, obtaining middlings with proper material and granulometric composition, thermal treatment of precipitated carbonates followed with the operations of drying and roasting; classification of roasted oxides, obtaining end products - polishing powders. The production of fluorine-containing powders includes the stage of their fluorination after the stage of carbonate precipitation. The stabilizing doping can be introduced both into the middlings during one of the technological process of powders manufacturing and into the end product. Rare earth polishing powders are manufactured in Russia by the Share Holding Company 'Chepetz Mechanical Plant' (ChMP Co.), the city of Glasov. The plant produces a number of polishing materials, such as; polishing powder Optinol, containing at least 50% by mass of cerium dioxide, used in the mass production of optical and other articles; polishing powder Optinol-10 with doping to improve the sedimentary and aggregate stability of the solid phase

  8. 3D memory: etch is the new litho

    Science.gov (United States)

    Petti, Christopher

    2018-03-01

    This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

  9. Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

    International Nuclear Information System (INIS)

    Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

    2008-01-01

    Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

  10. Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

    International Nuclear Information System (INIS)

    Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

    1999-01-01

    The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

  11. Causes of defects and accuracy of structure reproduction in deep-etch X-ray lithography using synchrotron radiation

    International Nuclear Information System (INIS)

    Mohr, J.; Ehrfeld, W.; Muenchmeyer, D.

    1988-07-01

    Under the LIGA process plastic microstructures with extraordinarily high aspect ratios are produced by means of deep-etch synchrotron radiation lithography. These microstructures are used as templates for the fabrication by electroforming of metallic microstructures. The several hundred micrometer thick resist layers required in the process are polymerized directly on a metal base plate using a methacrylate based resin. This provides sufficient stability during the production process and also a reliable plating base for the electrodeposition of the metal. Perfect adhesion of micron-sized microstructures on a smooth surface can be achieved if the polished metal surface is sputtered with titanium and chemically oxidized afterwards. Alternatively it is also possible to add an internal adhesion promoter like methacryl oxypropyl trimethoxy silane to the resin. By means of this adhesion promoter chemical bonding between the metal surface and the polymer is achieved. (orig.)

  12. Polishing of silicon based advanced ceramics

    Science.gov (United States)

    Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

    2009-05-01

    Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

  13. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted.

    Science.gov (United States)

    Zhai, Ke; He, Qing; Li, Liang; Ren, Yi

    2017-09-01

    Chemical mechanical polishing (CMP) is the primary method to realize the global planarization of silicon wafer. In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper. A matching layer structure of polishing head was calculated and designed. Silicon wafers are polished by megasonic assisted chemical mechanical polishing and traditional chemical mechanical polishing respectively, both coarse polishing and precision polishing experiments were carried out. With the use of megasonic vibration, the surface roughness values Ra reduced from 22.260nm to 17.835nm in coarse polishing, and the material removal rate increased by approximately 15-25% for megasonic assisted chemical mechanical polishing relative to traditional chemical mechanical polishing. Average Surface roughness values Ra reduced from 0.509nm to 0.387nm in precision polishing. The results show that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The material removal and finishing mechanisms of megasonic vibration assisted polishing are investigated too. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. The Significance of Caspase-Cleaved Cytokeratin 18 in Pleural Effusion

    Science.gov (United States)

    Lee, Keu Sung; Chung, Joo Yang; Jung, Yun Jung; Chung, Wou Young; Park, Joo Hun; Sheen, Seung Soo; Lee, Kyi Beom

    2014-01-01

    Background Apoptosis plays a role in the development of pleural effusion. Caspase-cleaved cytokeratin 18, a marker for epithelial cell apoptosis, was evaluated in pleural effusion. Methods A total of 79 patients with pleural effusion were enrolled. The underlying causes were lung cancer (n=24), parapneumonic effusion (n=15), tuberculous effusion (n=28), and transudates (n=12). The levels of M30, an epitope of caspase-cleaved cytokeratin 18, were measured in blood and pleural fluids using enzyme-linked immunosorbent assay along with routine cellular and biochemical parameters. The expression of M30 was evaluated in the pleural tissues using immunohistochemistry for M30. Results The M30 levels in pleural fluid were significantly higher in patients with tuberculosis (2,632.1±1,467.3 U/mL) than in patients with lung cancer (956.5±618.5 U/mL), parapneumonic effusion (689.9±413.6 U/mL), and transudates (273.6±144.5 U/mL; all peffusion from all other effusions was 0.93. In the immunohistochemical analysis of M30, all pathologic types of cancer cells showed moderate to high expression, and the epithelioid cells in granulomas showed high expression in tuberculous pleural tissues. Conclusion Caspase-cleaved cytokeratin 18 was most prominently observed in tuberculous pleural effusion and showed utility as a clinical marker. The main source of M30 was found to be the epithelioid cells of granulomas in tuberculous pleural tissues. PMID:24523813

  15. Si etching with reactive neutral beams of very low energy

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  16. STUDY OF POLISHING AISI 316L WITH STRUCTURED ABRASIVE

    Directory of Open Access Journals (Sweden)

    François GOOSSENS

    2015-05-01

    Full Text Available Finishing process like polishing is usually used to obtain high quality mechanical surface characteristics such as texture and roughness. These operations are mainly handmade and need highly trained operators thus limiting their repeatability and profitability. To optimize the industrialization of the polishing process, it is therefore necessary to modelize the process to built efficient parameter database. The aim of this study is to characterise the polishing of 316L stainless steel with structured abrasive belts. The geometric data of the belts are given, and we then propose a model to determine material removal. An experimental test bench is set up to test this model and characterise the polishing process in terms of forces. It produces samples for different polishing conditions. The different polished surfaces are then analyzed thanks to the roughness and the wettability. Using experimental designs, we are able to validate the proposed model and identify the parameters that influence a polishing operation.

  17. Technological Advances of Robot Assisted Polishing

    DEFF Research Database (Denmark)

    Lazarev, Ruslan; Top, Søren; Grønbæk, Jens

    The efficient polishing of surfaces is very important in mould and die industry. Fine abrasive processes are widely used in industry for the first steps for the production of tools of high quality in terms of finishing accuracy, form and surface integrity. While manufacturing of most components....... In this study, the influence of polishing parameters and type of polishing media on fine abrasive surface finishing is investigated. Experimental study is covering 2D rotational surfaces that is widespread used in mould and dies industry. Application of it is essential for process intelligent control, condition...... monitoring and quality inspection....

  18. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  19. Comparative study of resist stabilization techniques for metal etch processing

    Science.gov (United States)

    Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

    1999-06-01

    This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

  20. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  1. High-Density Plasma-Induced Etch Damage of GaN

    International Nuclear Information System (INIS)

    Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-01-01

    Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

  2. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

  3. Influence of water storage on fatigue strength of self-etch adhesives.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2015-12-01

    The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Features of copper etching in chlorine-argon plasma

    International Nuclear Information System (INIS)

    Efremov, A.M.; Svettsov, V.I.

    1995-01-01

    Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

  5. Neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

    1977-01-01

    Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

  6. The Polish Mother on the defensive? The transformation of the myth and its impact on the motherhood of Polish women

    Directory of Open Access Journals (Sweden)

    Agnieszka Imbierowicz

    2012-06-01

    Full Text Available The subject of this presentation is the attempt to define and to present the origins, socio-cultural content and the evolution of The Polish Mother myth, present in the polish national consciousness. The author tries to show how this myth was born, what functions it fulfilled and what forms it took in the changing historical and social reality, from the moment of loss of independence, through a period of real socialism, until the present day. The impact of this myth in the lives of real women and their motherhood is taken into consideration. Then, the author comparing the results of the latest polish sociological researches on the family and its transformation, and transformation of value systems together with theories about the specifics of life in the period of postmodernity, wonders whether it’s time to deconstruct the myth of The Polish Mother, because it does not fit the conditions of today’s world, which is characterized, above all, by the apotheosis of individuality, self-realization and freedom, or perhaps in polish society there is still strong traditionalism in thinking about motherhood, and the myth of The Polish Mother is still alive?

  7. Effect of polishing instruments and polishing regimens on surface topography and phase transformation of monolithic zirconia: An evaluation with XPS and XRD analysis.

    Science.gov (United States)

    Al-Haj Husain, Nadin; Camilleri, Josette; Özcan, Mutlu

    2016-12-01

    Polishing procedures might alter monolithic zirconia (MZ) surface resulting in phase changes that can be deleterious for clinical performance and antagonist tooth wear. This study investigated the topographical features and phase transformation in MZ after polishing with different regimens simulating the clinical workflow. ​ MZ specimens (Katana Zirconia HT, Kuraray-Noritake) (12×12×1.8 mm(3)) were grinded and polished using one of the five systems assessed: BG: Silicone carbide polishers (Brownie, Greenie, Super Greenie); CG: Diamond impregnated ceramic polisher kit (Ceragloss); EV: Synthetically bonded grinder interspersed with diamond (EVE Kit); SL: Urethane coated paper with aluminium oxide grits (Soflex Finishing and Polishing System Kit) and DB: Diamond bur (8 µm). Polished specimens were initially roughened with 220 µm diamond burs (Grinding Bur-GB) (10 s, 160.000160,000 rpm) and considered for baseline measurements. Polishing regimens were performed for 10 s using a slow-speed hand piece under water-cooling except for SL, in a custom made device (750 g; 5000 and 75,000 rpm). Surface roughnesses, phase changes (XRD) were assessed, surface characterization was performed (SEM, EDS). The highest roughness was obtained with the EV system (1.11 µm) compared to those of other systems (0.13-0.4 µm) (pθ and minor peak at 34.94°2θ. While GB, CG, EV, SL and DB exhibited a peak shift to the left, BG demonstrated a right peak shift on the 2θ scale. Monoclinic phase change was not noted in any of the groups. All polishing methods, except BG, exhibited a peak shift towards the lower angles of the 2-theta scale. Since the peak shifts were in the order of fractions of an angle they are attributed to stress formation rather than a phase change in the material. Thus, all polishing systems tested may not be detrimental for the phase transformation of MZ. EV system resulted in the highest roughness and none of the polishing regimens restored the polishability to the

  8. Electronegativity-dependent tin etching from thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

    2016-07-15

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

  9. In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Toodehzaeim

    2014-06-01

    Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

  10. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  11. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  12. Characterization of etch pits found on a large-grain bulk niobium superconducting radio-frequency resonant cavity

    Directory of Open Access Journals (Sweden)

    Xin Zhao

    2010-12-01

    Full Text Available The performance of superconducting radio-frequency (SRF resonant cavities made of bulk niobium is limited by nonlinear localized effects. Surface analysis of regions of higher power dissipation is thus of intense interest. Such areas (referred to as “hotspots” were identified in a large-grain single-cell cavity that had been buffered-chemical polished and dissected for examination by high resolution electron microscopy, electron backscattered diffraction microscopy (EBSD, and optical microscopy. Pits with clearly discernible crystal facets were observed in both “hotspot” and “coldspot” specimens. The pits were found in-grain, at bicrystal boundaries, and on tricrystal junctions. They are interpreted as etch pits induced by crystal defects (e.g. dislocations. All coldspots examined had a qualitatively lower density of etch pits or relatively smooth tricrystal boundary junctions. EBSD mapping revealed the crystal orientation surrounding the pits. Locations with high pit density are correlated with higher mean values of the local average misorientation angle distributions, indicating a higher geometrically necessary dislocation content. In addition, a survey of the samples by energy dispersive x-ray analysis did not show any significant contamination of the samples’ surface. The local magnetic field enhancement produced by the sharp-edge features observed on the samples is not sufficient to explain the observed degradation of the cavity quality factor, which starts at peak surface magnetic field as low as 20 mT.

  13. Chemical Mechanical Polishing Optimization for 4H-SiC

    National Research Council Canada - National Science Library

    Neslen, Craig

    2000-01-01

    .... Preliminary chemical mechanical polishing (CMP) studies of 1 3/8" 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time...

  14. Photonic jet μ-etching: from static to dynamic process

    Science.gov (United States)

    Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

    2017-05-01

    Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

  15. Laser polishing of 3D printed mesoscale components

    International Nuclear Information System (INIS)

    Bhaduri, Debajyoti; Penchev, Pavel; Batal, Afif; Dimov, Stefan; Soo, Sein Leung; Sten, Stella; Harrysson, Urban; Zhang, Zhenxue; Dong, Hanshan

    2017-01-01

    Highlights: • Process optimisation for laser polishing novel 3D printed SS316L parts. • Evaluating the effects of key polishing parameters on SS316L surface roughness. • Detailed spectroscopic analysis of oxide layer formation due to laser polishing. • Comparative surface integrity analysis of SS parts polished in air and argon. • A maximum reduction in roughness of over 94% achieved at optimised polishing settings. - Abstract: Laser polishing of various engineered materials such as glass, silica, steel, nickel and titanium alloys, has attracted considerable interest in the last 20 years due to its superior flexibility, operating speed and capability for localised surface treatment compared to conventional mechanical based methods. The paper initially reports results from process optimisation experiments aimed at investigating the influence of laser fluence and pulse overlap parameters on resulting workpiece surface roughness following laser polishing of planar 3D printed stainless steel (SS316L) specimens. A maximum reduction in roughness of over 94% (from ∼3.8 to ∼0.2 μm S_a) was achieved at the optimised settings (fluence of 9 J/cm"2 and overlap factors of 95% and 88–91% along beam scanning and step-over directions respectively). Subsequent analysis using both X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES) confirmed the presence of surface oxide layers (predominantly consisting of Fe and Cr phases) up to a depth of ∼0.5 μm when laser polishing was performed under normal atmospheric conditions. Conversely, formation of oxide layers was negligible when operating in an inert argon gas environment. The microhardness of the polished specimens was primarily influenced by the input thermal energy, with greater sub-surface hardness (up to ∼60%) recorded in the samples processed with higher energy density. Additionally, all of the polished surfaces were free of the scratch marks, pits, holes, lumps

  16. Laser polishing of 3D printed mesoscale components

    Energy Technology Data Exchange (ETDEWEB)

    Bhaduri, Debajyoti, E-mail: debajyoti.bhaduri@gmail.com [Department of Mechanical Engineering, School of Engineering, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Penchev, Pavel; Batal, Afif; Dimov, Stefan; Soo, Sein Leung [Department of Mechanical Engineering, School of Engineering, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Sten, Stella; Harrysson, Urban [Digital Metal, Höganäs AB, 263 83 Höganäs (Sweden); Zhang, Zhenxue; Dong, Hanshan [School of Metallurgy and Materials, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom)

    2017-05-31

    Highlights: • Process optimisation for laser polishing novel 3D printed SS316L parts. • Evaluating the effects of key polishing parameters on SS316L surface roughness. • Detailed spectroscopic analysis of oxide layer formation due to laser polishing. • Comparative surface integrity analysis of SS parts polished in air and argon. • A maximum reduction in roughness of over 94% achieved at optimised polishing settings. - Abstract: Laser polishing of various engineered materials such as glass, silica, steel, nickel and titanium alloys, has attracted considerable interest in the last 20 years due to its superior flexibility, operating speed and capability for localised surface treatment compared to conventional mechanical based methods. The paper initially reports results from process optimisation experiments aimed at investigating the influence of laser fluence and pulse overlap parameters on resulting workpiece surface roughness following laser polishing of planar 3D printed stainless steel (SS316L) specimens. A maximum reduction in roughness of over 94% (from ∼3.8 to ∼0.2 μm S{sub a}) was achieved at the optimised settings (fluence of 9 J/cm{sup 2} and overlap factors of 95% and 88–91% along beam scanning and step-over directions respectively). Subsequent analysis using both X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES) confirmed the presence of surface oxide layers (predominantly consisting of Fe and Cr phases) up to a depth of ∼0.5 μm when laser polishing was performed under normal atmospheric conditions. Conversely, formation of oxide layers was negligible when operating in an inert argon gas environment. The microhardness of the polished specimens was primarily influenced by the input thermal energy, with greater sub-surface hardness (up to ∼60%) recorded in the samples processed with higher energy density. Additionally, all of the polished surfaces were free of the scratch marks, pits, holes

  17. Polish Qualitative Sociology: The General Features and Development

    OpenAIRE

    Konecki, Krzysztof Tomasz

    2005-01-01

    The article explores the development of Polish qualitative sociology in Poland by presenting its main intellectual routes and some of the general features of Polish sociology. Romanticism and inductionmethod are crucial elements for the development of this discipline in Poland and contribute to its. unigueness. The role of Florian Znaniecki in creating the Polish qualitative sociology is also underlined. Krzysztof Konecki

  18. Sensing roughness and polish direction

    DEFF Research Database (Denmark)

    Jakobsen, Michael Linde; Olesen, Anders Sig; Larsen, Henning Engelbrecht

    2016-01-01

    As a part of the work carried out in a project supported by the Danish Council for Technology and Innovation, we have investigated the option of smoothing standard CNC-machined surfaces. In the process of constructing optical prototypes, involving custom-designed optics, the development cost...... and time consumption can become prohibitive in a research budget. Machining the optical surfaces directly is expensive and time consuming. Alternatively, a more standardized and cheaper machining method can be used, calling for the object to be manually polished. During the polishing process, the operator...... needs information about the RMS-value of the surface roughness and the current direction of the scratches introduced by the polishing process. The RMS-value indicates to the operator how far he is from the final finish, and the scratch orientation is often specified by the customer in order to avoid...

  19. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  20. Exploration of suitable dry etch technologies for directed self-assembly

    Science.gov (United States)

    Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

    2012-03-01

    Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

  1. Etching of enamel for direct bonding with a thulium fiber laser

    Science.gov (United States)

    Kabaş Sarp, Ayşe S.; Gülsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  2. Dry etch challenges for CD shrinkage in memory process

    Science.gov (United States)

    Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

    2015-03-01

    Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

  3. The K 2S 2O 8-KOH photoetching system for GaN

    Science.gov (United States)

    Weyher, J. L.; Tichelaar, F. D.; van Dorp, D. H.; Kelly, J. J.; Khachapuridze, A.

    2010-09-01

    A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K 2S 2O 8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were defined: defect-selective etching (denoted by KSO-D) and polishing (KSO-P). Both photoetching methods can be used under open-circuit (electroless) conditions. Well-defined dislocation-related etch whiskers are formed during KSO-D etching. All types of dislocations are revealed, and this was confirmed by cross-sectional TEM examination of the etched samples. Extended electrically active defects are also clearly revealed. The known relationship between etch rate and carrier concentration for photoetching of GaN in KOH solutions was confirmed for KSO-D etch using Raman measurements. It is shown that during KSO-P etching diffusion is the rate-limiting step, i.e. this etch is suitable for polishing of GaN. Some constraints of the KSO etching system for GaN are discussed and peculiar etch features, so far not understood, are described.

  4. Development and application of the electrochemical etching technique. Annual progress report

    International Nuclear Information System (INIS)

    1979-08-01

    This report documents advances in the development and application of the electrochemical etching technique for thermal and epithermal neutron dosimetry as well as track geometry determinations. The bulk and track etching rates were studied by evaluating the track geometry during electrochemical etching. The foil surface removed versus etching time for two different etchants at 1000 V, 2 kHz, and 22 0 C were studied. Results indicated that the bulk etching rates were constant for the two etchants, i.e. 45% KOH and 45% KOH mixed with an equal volume of C 2 H 5 OH 5 and were equal to 0.20 +- 0.14 μm/hr and 2.7 +- 0.27 μm/hr from each side of the foil. The track etching rate (as contrasted with the bulk etching rate) can be determined by the microscope focus at various depths. The increase of track depth values as a function of etching time for the two etchants are plotted. The track cone angles were determined and found to be much larger for electrochemically etched polycarbonate foils than for most plastics etched with passive chemical techniques

  5. Effects of polishing procedures on color stability of composite resins

    Directory of Open Access Journals (Sweden)

    Ahmet Umut Güler

    2009-04-01

    Full Text Available The purpose of this study was to investigate the effect of different polishing methods on color stability of posterior, universal and nanohybrid composite resin restorative materials upon exposure to a staining agent. Twenty-five specimens were prepared for each of 5 different composite resins (Filtek Z250, Filtek P60, Quadrant LC, Grandio and Filtek Supreme. Specimens were divided into 5 groups and different polishing procedures, including polishing discs (Pd, polishing discs then diamond polishing paste (PdP, polishing discs then a liquid polishing system (Biscover (PdB, and combinations of these (PdPB were used. Unpolished specimens served as the control (C. The specimens were stored for 48 h in a coffee solution. The color of all specimens was measured before and after exposure with a colorimeter, and total color change (DE* were calculated. The data were analyzed with a two-way ANOVA and the means were compared by Tukey HSD test (a=0.05. The lowest color difference was observed in the groups PdP and C, while the highest color difference was observed in PdPB, and PdB. When comparing the five different restorative materials, no significant difference was observed between FiltekP60 and FiltekZ250, and these materials demonstrated significantly less color change than Quadrant LC and the nanohybrid materials (Grandio, Filtek Supreme. The posterior (Filtek P60 and universal (Filtek Z250 composite resin restorative materials, which do not contain tetraethyleneglycol dimethacrylate (TEGDMA, were found to be less stainable than the nanohybrid (Grandio, Filtek Supreme and universal (Quadrant LC composite resins, which contain TEGDMA. The use of diamond polishing paste after polishing with polishing discs significantly decreased staining when compared to the groups that used polishing discs alone, for all restorative materials tested. The highest color change values were obtained for the specimens that were polished with the Biscover liquid polish

  6. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  7. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  8. Optical-fiber strain sensors with asymmetric etched structures.

    Science.gov (United States)

    Vaziri, M; Chen, C L

    1993-11-01

    Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

  9. Polish Semantic Parser

    Directory of Open Access Journals (Sweden)

    Agnieszka Grudzinska

    2000-01-01

    Full Text Available Amount of information transferred by computers grows very rapidly thus outgrowing the average man's capability of reception. It implies computer programs increase in the demand for which would be able to perform an introductory classitication or even selection of information directed to a particular receiver. Due to the complexity of the problem, we restricted it to understanding short newspaper notes. Among many conceptions formulated so far, the conceptual dependency worked out by Roger Schank has been chosen. It is a formal language of description of the semantics of pronouncement integrated with a text understanding algorithm. Substantial part of each text transformation system is a semantic parser of the Polish language. It is a module, which as the first and the only one has an access to the text in the Polish language. lt plays the role of an element, which finds relations between words of the Polish language and the formal registration. It translates sentences written in the language used by people into the language theory. The presented structure of knowledge units and the shape of understanding process algorithms are universal by virtue of the theory. On the other hand the defined knowledge units and the rules used in the algorithms ure only examples because they are constructed in order to understand short newspaper notes.

  10. Microbiological flora and nail polish: a brief report.

    Science.gov (United States)

    Rayan, G M; Flournoy, D J; Schlageter, P

    1994-11-01

    Removing nail polish and prosthetic nails from operating room (OR) personnel prior to scrubbing and from patients prior to hand surgery is recommended but not practiced in many hospitals. There is concern that nail polish can act as a vehicle for the transfer of infectious agents. This study was designed to determine the incidence of microbiological flora of nail polish in a clinical setting.

  11. Smoking characteristics of Polish immigrants in Dublin.

    LENUS (Irish Health Repository)

    Kabir, Zubair

    2008-01-01

    BACKGROUND: This study examined two main hypotheses: a) Polish immigrants\\' smoking estimates are greater than their Irish counterparts (b) Polish immigrants purchasing cigarettes from Poland smoke "heavier" (>\\/= 20 cigarettes a day) when compared to those purchasing cigarettes from Ireland. The study also set out to identify significant predictors of \\'current\\' smoking (some days and everyday) among the Polish immigrants. METHODS: Dublin residents of Polish origin (n = 1,545) completed a previously validated Polish questionnaire in response to an advertisement in a local Polish lifestyle magazine over 5 weekends (July-August, 2007). The Office of Tobacco Control telephone-based monthly survey data were analyzed for the Irish population in Dublin for the same period (n = 484). RESULTS: Age-sex adjusted smoking estimates were: 47.6% (95% Confidence Interval [CI]: 47.3%; 48.0%) among the Poles and 27.8% (95% CI: 27.2%; 28.4%) among the general Irish population (p < 0.001). Of the 57% of smokers (n = 345\\/606) who purchased cigarettes solely from Poland and the 33% (n = 198\\/606) who purchased only from Ireland, 42.6% (n = 147\\/345) and 41.4% (n = 82\\/198) were "heavy" smokers, respectively (p = 0.79). Employment (Odds Ratio [OR]: 2.89; 95% CI: 1.25-6.69), lower education (OR: 3.76; 95%CI: 2.46-5.74), and a longer stay in Ireland (>24 months) were significant predictors of current smoking among the Poles. An objective validation of the self-reported smoking history of a randomly selected sub-sample immigrant group, using expired carbon monoxide (CO) measurements, showed a highly significant correlation coefficient (r = 0.64) of expired CO levels with the reported number of cigarettes consumed (p < 0.0001). CONCLUSION: Polish immigrants\\' smoking estimates are higher than their Irish counterparts, and particularly if employed, with only primary-level education, and are overseas >2 years.

  12. Morphology of resin-dentin interfaces after Er,Cr:YSGG laser and acid etching preparation and application of different bonding systems.

    Science.gov (United States)

    Beer, Franziska; Buchmair, Alfred; Körpert, Wolfram; Marvastian, Leila; Wernisch, Johann; Moritz, Andreas

    2012-07-01

    The goal of this study was to show the modifications in the ultrastructure of the dentin surface morphology following different surface treatments. The stability of the adhesive compound with dentin after laser preparation compared with conventional preparation using different bonding agents was evaluated. An Er,Cr:YSGG laser and 36% phosphoric acid in combination with various bonding systems were used. A total of 100 caries-free human third molars were used in this study. Immediately after surgical removal teeth were cut using a band saw and 1-mm thick dentin slices were created starting at a distance of 4 mm from the cusp plane to ensure complete removal of the enamel. The discs were polished with silicon carbide paper into rectangular shapes to a size of 6 × 4 mm (±0,2 mm).The discs as well as the remaining teeth stumps were stored in 0.9% NaCl at room temperature. The specimens were divided into three main groups (group I laser group, group II etch group, group III laser and etch group) and each group was subdivided into three subgroups which were allocated to the different bonding systems (subgroup A Excite, subgroup B Scotchbond, subgroup C Syntac). Each disc and the corresponding tooth stump were treated in the same way. After preparation the bonding composite material was applied according to the manufacturers' guidelines in a hollow tube of 2 mm diameter to the disc as well as to the corresponding tooth stump. Shear bond strength testing and environmental scanning electron microscopy were used to assess the morphology and stability of the resin-dentin interface. The self-etching bonding system showed the highest and the most constant shear values in all three main groups, thus enabling etching with phosphoric acid after laser preparation to be avoided. Thus we conclude that laser preparation creates a surface texture that allows prediction of the quality of the restoration without the risk of negative influences during the following treatment steps. This

  13. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  14. The mechanism of selective corrugation removal by KOH anisotropic wet etching

    International Nuclear Information System (INIS)

    Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

    2010-01-01

    The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

  15. Reel-to-reel substrate tape polishing system

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, Venkat; Gardner, Michael T.; Judd, Raymond D.; Weloth, Martin; Qiao, Yunfei

    2005-06-21

    Disclosed is a reel-to-reel single-pass mechanical polishing system (100) suitable for polishing long lengths of metal substrate tape (124) used in the manufacture of high-temperature superconductor (HTS) coated tape, including multiple instantiations of a polishing station (114) in combination with a subsequent rinsing station (116) arranged along the axis of the metal substrate tape (124) that is translating between a payout spool (110a) and a take-up spool (110b). The metal substrate tape obtains a surface smoothness that is suitable for the subsequent deposition of a buffer layer.

  16. Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

    Science.gov (United States)

    Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

    2017-12-01

    In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

  17. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  18. Selective dry etching of silicon containing anti-reflective coating

    Science.gov (United States)

    Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

    2018-03-01

    Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

  19. Polish Qualitative Sociology: The General Features and Development

    OpenAIRE

    Konecki, Krzysztof Tomasz; Kacperczyk, Anna; Marciniak, Łukasz

    2005-01-01

    Forum Qualitative Sozialforschung / Forum: Qualitative Social Research,2005, 6(3) The article explores the development of Polish qualitative sociology in Poland by presenting its main intellectual routes and some of the general features of Polish sociology. Romanticism and inductionmethod are crucial elements for the development of this discipline in Poland and contribute to its. unigueness. The role of Florian Znaniecki in creating the Polish qualitative sociology is also underlined.

  20. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    ‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  1. Etch characteristics of BCB film using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

    2003-01-01

    The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

  2. 21 CFR 872.6030 - Oral cavity abrasive polishing agent.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oral cavity abrasive polishing agent. 872.6030... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Miscellaneous Devices § 872.6030 Oral cavity abrasive polishing agent. (a) Identification. An oral cavity abrasive polishing agent is a device in paste or powder form...

  3. No-waiting dentine self-etch concept-Merit or hype.

    Science.gov (United States)

    Huang, Xue-Qing; Pucci, César R; Luo, Tao; Breschi, Lorenzo; Pashley, David H; Niu, Li-Na; Tay, Franklin R

    2017-07-01

    A recently-launched universal adhesive, G-Premio Bond, provides clinicians with the alternative to use the self-etch technique for bonding to dentine without waiting for the adhesive to interact with the bonding substrate (no-waiting self-etch; Japanese brochure), or after leaving the adhesive undisturbed for 10s (10-s self-etch; international brochure). The present study was performed to examine in vitro performance of this new universal adhesive bonded to human coronal dentine using the two alternative self-etch modes. One hundred and ten specimens were bonded using two self-etch application modes and examined with or without thermomechanical cycling (10,000 thermal cycles and 240,000 mechanical cycles) to simulate one year of intraoral functioning. The bonded specimens were sectioned for microtensile bond testing, ultrastructural and nanoleakage examination using transmission electron microscopy. Changes in the composition of mineralised dentine after adhesive application were examined using Fourier transform infrared spectroscopy. Both reduced application time and thermomechanical cycling resulted in significantly lower bond strengths, thinner hybrid layers, and significantly more extensive nanoleakage after thermomechanical cycling. Using the conventional 10-s application time improved bonding performance when compared with the no-waiting self-etch technique. Nevertheless, nanoleakage was generally extensive under all testing parameters employed for examining the adhesive. Although sufficient bond strength to dentine may be achieved using the present universal adhesive in the no-waiting self-etch mode that does not require clinicians to wait prior to polymerisation of the adhesive, this self-etch concept requires further technological refinement before it can be recommended as a clinical technique. Although the surge for cutting application time to increase user friendliness remains the most frequently sought conduit for advancement of dentine bonding

  4. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  5. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  6. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  7. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

    2017-07-15

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  8. Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

    OpenAIRE

    Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

    2011-01-01

    The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

  9. Plasma atomic layer etching using conventional plasma equipment

    International Nuclear Information System (INIS)

    Agarwal, Ankur; Kushner, Mark J.

    2009-01-01

    The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

  10. 19th Polish Control Conference

    CERN Document Server

    Kacprzyk, Janusz; Oprzędkiewicz, Krzysztof; Skruch, Paweł

    2017-01-01

    This volume contains the proceedings of the KKA 2017 – the 19th Polish Control Conference, organized by the Department of Automatics and Biomedical Engineering, AGH University of Science and Technology in Kraków, Poland on June 18–21, 2017, under the auspices of the Committee on Automatic Control and Robotics of the Polish Academy of Sciences, and the Commission for Engineering Sciences of the Polish Academy of Arts and Sciences. Part 1 deals with general issues of modeling and control, notably flow modeling and control, sliding mode, predictive, dual, etc. control. In turn, Part 2 focuses on optimization, estimation and prediction for control. Part 3 is concerned with autonomous vehicles, while Part 4 addresses applications. Part 5 discusses computer methods in control, and Part 6 examines fractional order calculus in the modeling and control of dynamic systems. Part 7 focuses on modern robotics. Part 8 deals with modeling and identification, while Part 9 deals with problems related to security, fault ...

  11. Technical Papers on the Eighteen Metallographic Group Meeting

    National Research Council Canada - National Science Library

    Roman, H

    1965-01-01

    The polishing and etching procedures for preparing metallic, ceramic and cermet specimens of nuclear materials using the Automet polisher are discussed with some typical examples of the excellent results obtained...

  12. Chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.; Seguchi, T.

    1979-01-01

    The chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer was studied. Etched holes 3000 to 4000 A in diameter were recognized by electron microscopy for a film bombarded by fission fragments in oxygen and etched in a 12N sodium hydroxide solution at 125 0 C. The radial etching rate at 125 0 C was 6 to 8 A/hr, which is less than 17 A/hr for polyvinylidene fluoride in the same sodium hydroxide concentration at 85 0 C. The smaller rate is a reflection of the larger chemical resistivity of ethylene-tetrafluoroethylene copolymer than polyvinylidene fluoride. (author)

  13. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  14. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  15. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  16. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  17. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  18. An Unbiased View of the History of Polish Medical Physics by a Senior Polish Medical Physicist

    International Nuclear Information System (INIS)

    Chomicki, O. A.

    2008-01-01

    Here is a story told by Maria Sklodowska-Curie at the meeting of the International Committee of Intellectual Cooperation in 1921: 'In a free literary competition on the role and importance of elephants the Englishman's story was 'My adventures while shooting elephants in South Africa', the Frenchman was more concerned with 'The sexual and erotic life of elephants', while the Polish approach was invariably 'The elephant versus Poland's national independence', which seemed quite understandable in the light of over 120 years when Poland was partitioned and lost its independence. Since then this saying has become proverbial and came to express the unmistakably Polish tendency to see everything in terms of Polish interests. In my remarks and reminiscences on the history of the Polish Society of Medical Physics you will quickly recognize the same tendency. First, I will, among other things, try to open some old cupboards to 'produce good [things] from the store of good' (Matthew 12:35), especially concerning the first few years of the activity in medical physics in Poland, and second, I will draw some conclusions and/or offer suggestions based on what a senior medical physicist has seen for more than 50 years of his activity in this field. (author)

  19. Cannabinoids cases in polish athletes

    OpenAIRE

    A Pokrywka; Z Obmiński; D Kwiatkowska; R Grucza

    2009-01-01

    The aim of this study was to investigate the number of cases and the profiles of Polish athletes who had occasionally been using marijuana or hashish throughout the period of 1998-2004, with respect to: sex, age, and discipline of sport as well as the period of testing (in- and out-of-competition). Results of the study were compared with some data reported by other WADA accredited anti-doping laboratories. Totally, 13 631 urine samples taken from Polish athletes of both sexes, aged 10-67 year...

  20. The social shaping of innovation in polish companies

    DEFF Research Database (Denmark)

    Lorentzen, Anne

    2003-01-01

    The paper deals with strategies of innovation in Polish manufacturing companies. The point of departure is a theoretical framework of enterprise level innovation, and of the factors forming strategies of innovation on enterprise level. The paper analyses evidence from 23 Polish companies and pres......The paper deals with strategies of innovation in Polish manufacturing companies. The point of departure is a theoretical framework of enterprise level innovation, and of the factors forming strategies of innovation on enterprise level. The paper analyses evidence from 23 Polish companies...... and presents two cases more in detail. The analysis shows that the Polish companies have all been quite innovative, mostly in relation to product innovation. They choose innovation strategies, which are incremental more than radical, and they tend to differentiate their product range rather than to specialise....... They consider quality development a must in the fight for market shares and they adapt equipment and organisation to this goal. The factors forming and determining the strategies of the companies count the technological knowledge and expertise of the owner/founder, the structural changes of the market...

  1. Semi-strong informational efficiency in the Polish foreign exchange market

    OpenAIRE

    Luksz Goczek

    2015-01-01

    During the financial crisis a notion that the Polish exchange rate is not determined effectively was very dominant, because of a contagion effect of the global financial crisis on the Polish economy. In addition, many foreign exchange market analysts explained developments in the Polish exchange market trough a hypothesis that the Polish zloty exchange rate follows other exchange rates. This contradicts market efficiency as this would lead to profitable arbitrage possibility based on past inf...

  2. Symmetry or asymmetry? Cross-border openness of service providers in Polish-Czech and Polish-German border towns

    Directory of Open Access Journals (Sweden)

    Dołzbłasz Sylwia

    2015-03-01

    Full Text Available The symmetry and/or asymmetry in terms of cross-border openness of service providers is examined in this article, for the cases of two border twin towns: Cieszyn/Český Těšín at the Polish-Czech border, and Gubin/Guben at the Polish-German border. To assess the level of openness of firms towards clients from the other side of the border, four trans-border categories were examined: neighbour’s language visible at store location; business offers in the language of the neighbour; the possibilities of payment in the neighbour’s currency; and the staff’s knowledge of the language. This enabled a comparison of both parts of the particular twin towns in relation to the character of cross-border openness, as well as an assessment of their symmetry/asymmetry. Comparisons of Gubin/Guben and Cieszyn/Český Těšín with respect to the analysed features were also carried out. The analysis shows significant variation in the level of cross-border openness towards clients from neighbouring countries. Whereas in the Polish-Czech town a relative symmetry was observed, in the Polish-German case, significant asymmetry was noted.

  3. Etching and oxidation of InAs in planar inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

    2009-10-15

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  4. Etching and oxidation of InAs in planar inductively coupled plasma

    Science.gov (United States)

    Dultsev, F. N.; Kesler, V. G.

    2009-10-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  5. Etching and oxidation of InAs in planar inductively coupled plasma

    International Nuclear Information System (INIS)

    Dultsev, F.N.; Kesler, V.G.

    2009-01-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  6. Etching and anti-etching strategy for sensitive colorimetric sensing of H2O2 and biothiols based on silver/carbon nanomaterial.

    Science.gov (United States)

    Hou, Wenli; Liu, Xiaoying; Lu, Qiujun; Liu, Meiling; Zhang, Youyu; Yao, Shouzhuo

    2018-02-01

    In this paper, the colorimetric sensing of H 2 O 2 related molecules and biothiols based on etching and anti-etching strategy was firstly proposed. Ag/carbon nanocomposite (Ag/C NC) was served as the sensing nanoprobe, which was synthesized via carbon dots (C-dots) as the reductant and stabilizer. The characteristic surface plasmon resonance (SPR) absorbance of Ag nanoparticles (AgNPs) was sensitive to the amount of hydrogen peroxide (H 2 O 2 ). It exhibited strong optical responses to H 2 O 2 with the solution colour changing from yellow to nearly colourless, which is resulted from the etching of Ag by H 2 O 2 . The sensing platform was further extended to detect H 2 O 2 related molecules such as lactate in coupling with the specific catalysis oxidation of L-lactate by lactate oxidase (LOx) and formation of H 2 O 2 . It provides wide linear range for detecting H 2 O 2 in 0.1-80μM and 80-220μM with the detection limit as low as 0.03μM (S/N=3). In the presence of biothiols, the etching from the H 2 O 2 can be hampered. Other biothiols exhibit anti-etching effects well. The strategy works well in detecting of typical biothiols including cysteine (Cys), homocysteine (Hcy) and glutathione (GSH). Thus, a simple colorimetric strategy for sensitive detection of H 2 O 2 and biothiols is proposed. It is believed that the colorimetric sensor based on etching and anti-etching strategy can be applied in other systems in chemical and biosensing areas. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Transformation of the Polish Banking Sector

    Directory of Open Access Journals (Sweden)

    Marek Stefański

    2009-07-01

    Full Text Available In the post-war period the banking system in Poland underwent two important system transitions: after 1946 and after 1989. The third transformation began after May 1, 2004, but it did not have a systemic character. The Polish banking sector started to operate on the Single European Market. The first part of the paper is devoted to the problems of the banks transformations after 1989 with a special focus on the quantitative development of banks in 19892008, and on subsequent privatisation and consolidation processes. The former intensified in 19891999, and the latter in 19992002. The consolidation process was very noticeable in the sector of cooperative banks after 1994. The second part of the paper includes an economic and financial analysis of the banks. A lot of attention was paid to the liquidity of the banking sector. It was assessed as good, which was confirmed by a short-term rating of Moodys and by the Financial Stability Report 2009, published by the National Bank of Poland in June 2009. The comparison of the net profit of the banking sector in 19972008 shows its dependence on the economic situation and policy. The number of banks with capital adequacy ratio well above the minimum required by the banking supervision is rising. The financial power ratings are not favorable for the domestic banks. The third part of the paper focuses on the development directions of the Polish banking sector. It may be concluded on the basis of the analysis that privatisation and consolidation processes will be continued. They will concentrate on the capital of foreign banks already operating in Poland. As compared with individual foreign banks, the potential of the Polish banking sector is week. The fourth part of the paper focuses on the presentation Polish banking sector in the context of European Union banking sector. The paper finishes with conclusions. Generally, Polish banks have to implement a strategy to enable them to compete on the Single

  8. Expression levels of cleaved caspase-3 and caspase-3 in tumorigenesis and prognosis of oral tongue squamous cell carcinoma.

    Directory of Open Access Journals (Sweden)

    Pei-Feng Liu

    Full Text Available Apoptosis plays a dual role in cancer development and malignancy. The role of apoptosis-related caspases in cancer remains controversial, particularly in oral tongue squamous cell carcinoma (OTSCC. In this study, we examined the protein levels of cleaved caspase-3, caspase-3, caspase-8, and caspase-9 on tissue microarrays consisting of samples from 246 OTSCC patients by immunohistochemistry. Wilcoxon signed-rank test indicated that the protein levels of cleaved caspase-3, caspase-3, caspase-8, and caspase-9 in tumor tissues were significantly higher compared to those in adjacent normal tissues (all p<0.001. The expression level of caspase-8 in tumors was elevated in patients with lymph node invasion. Moreover, positive expression of cleaved caspase-3 was associated with shorter disease-free survival (DFS in OTSCC patients with moderate differentiation and lymph node invasion. Combination of either positive cleaved caspase-3 or higher caspase-3 expression or both was associated with poor DFS. Interestingly, stratification analysis showed that co-expression levels of positive cleaved caspase-3 or/and higher caspase-3 were associated with better disease-specific survival in patients with advanced stages of the disease, such as large tumor size and lymph node invasion, whereas it was associated with poor DFS in OTSCC patients with moderate cell differentiation and small tumor size. Taken together, cleaved caspase-3 and caspase-3/8/9 could be biomarkers for tumorigenesis in OTSCC patients. The co-expression level of cleaved caspase-3 and caspase-3 might be a prognostic biomarker for OTSCC patients, particular in those patients with certain tumor stages and cell differentiation status.

  9. Effect of Polishing Systems on Surface Roughness and Topography of Monolithic Zirconia.

    Science.gov (United States)

    Goo, C L; Yap, Auj; Tan, Kbc; Fawzy, A S

    2016-01-01

    This study evaluated the effect of different chairside polishing systems on the surface roughness and topography of monolithic zirconia. Thirty-five monolithic zirconia specimens (Lava PLUS, 3M ESPE) were fabricated and divided into five groups of seven and polished with the following: Group 1 (WZ)-Dura white stone followed by Shofu zirconia polishing kit; Group 2 (SZ)-Shofu zirconia polishing kit; Group 3 (CE)-Ceramiste porcelain polishers; Group 4 (CM)-Ceramaster porcelain polishers; and Group 5 (KZ)-Komet ZR zirconia polishers. All specimens were ground with a fine-grit diamond bur prior to polishing procedures to simulate clinical finishing. Baseline and post-polishing profilometric readings were recorded and delta Ra values (difference in mean surface roughness before and after polishing) were computed and analyzed using one-way analysis of variance and Scheffe post hoc test (pSEM) images of the ground but unpolished and polished specimens were acquired. Delta Ra values ranged from 0.146 for CE to 0.400 for KZ. Delta Ra values for KZ, WZ, and SZ were significantly greater than for CE. Significant differences in delta Ra values were also observed between KZ and CM. The SEM images obtained were consistent with the profilometric findings. Diamond-impregnated polishing systems were more effective than silica carbide-impregnated ones in reducing the surface roughness of ground monolithic zirconia.

  10. Simulation and analysis of an alternative kinematics for improving the polishing uniformity over the surface of polished tiles

    Directory of Open Access Journals (Sweden)

    Weingaertner, W. L.

    2010-10-01

    Full Text Available The present work investigates the possibility of adopting a new kinematics at the industrial polishing lines of porcelain stoneware tile. An alternative motion of the transverse oscillation of the polishing heads is proposed, in which no radical changes in the industries facilities are required. The basic idea is to replace the purely sinus motion of the polishing heads by a rather trapezoid wavelike motion. In theory this could be achieved simply by adopting regular delays at the transverse oscillation motion. Consequences of this alternative kinematics were quantitatively analyzed considering the spatial homogeneity of polishing expected for tiles. Such homogeneity was represented by the coefficient of variation of the distribution of polishing time over the surface, which was in turn determined by means of computational simulations, taking into account the effect of multiple polishing heads.

    El presente trabajo investiga la posibilidad de adoptar una nueva cinemática en las líneas de pulido industrial de baldosas de gres porcelánico. Se propone una propuesta alternativa de la oscilación transversal de los cabezales pulidores, en el que no hay cambios radicales en las instalaciones de las industrias son necesarias. La idea básica consiste en sustituir el movimiento totalmente del seno de los cabezales pulidores por un movimiento ondulatorio trapezoide. En teoría, esto podría lograrse sólo mediante la adopción de los habituales retrasos en el movimiento de oscilación transversal. las consecuencias de esta cinemática fueron analizados cuantitativamente, teniendo en cuenta la homogeneidad espacial de pulido. Tal homogeneidad fora representada por el coeficiente de variación de la distribución de lo tiempo de pulido en la superficie, determinada por medio de simulaciones computacionales, teniendo también en cuenta el efecto de pulido de las cabezas múltiples.

  11. Evaluation of Bcl-2, Bcl-x and Cleaved Caspase-3 in Malignant Peripheral Nerve Sheath Tumors and Neurofibromas

    Directory of Open Access Journals (Sweden)

    KARIN S. CUNHA

    2013-11-01

    Full Text Available AIMS: To study the expression of Bcl-2, Bcl-x, as well the presence of cleaved caspase-3 in neurofibromas and malignant peripheral nerve sheath tumors. The expression of Bcl-2 and Bcl-x and the presence of cleaved caspase 3 were compared to clinicopathological features of malignant peripheral nerve sheath tumors and their impact on survival rates were also investigated. MATERIALS AND METHODS: The evaluation of Bcl-2, Bcl-x and cleaved caspase-3 was performed by immunohistochemistry using tissue microarrays in 28 malignant peripheral nerve sheath tumors and 38 neurofibromas. Immunoquantification was performed by computerized digital image analysis. CONCLUSIONS: Apoptosis is altered in neurofibromas and mainly in malignant peripheral nerve sheath tumors. High levels of cleaved caspase-3 are more common in tumors with more aggressive histological features and it is associated with lower disease free survival of patients with malignant peripheral nerve sheath tumors.

  12. Temperature increase beneath etched dentin discs during composite polymerization.

    Science.gov (United States)

    Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

    2011-01-01

    The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

  13. Process margin enhancement for 0.25-μm metal etch process

    Science.gov (United States)

    Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

    2000-06-01

    This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side

  14. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  15. Plasma etching of polymers like SU8 and BCB

    Science.gov (United States)

    Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

    2003-01-01

    Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

  16. Cannabinoids cases in polish athletes

    Directory of Open Access Journals (Sweden)

    A Pokrywka

    2009-07-01

    Full Text Available The aim of this study was to investigate the number of cases and the profiles of Polish athletes who had occasionally been using marijuana or hashish throughout the period of 1998-2004, with respect to: sex, age, and discipline of sport as well as the period of testing (in- and out-of-competition. Results of the study were compared with some data reported by other WADA accredited anti-doping laboratories. Totally, 13 631 urine samples taken from Polish athletes of both sexes, aged 10-67 years, performing 46 disciplines of sport were tested. Cannabinoids were detected in 267 samples. Among Polish athletes the relative number of positive THC (tetrahydrocannabinol samples was one of the highest in Europe. The group of young Polish athletes (aged 16-24 years was the most THC-positive. THC-positive cases were noted more frequently in male athletes tested during out of competitions. The so-called contact sports (rugby, ice hockey, skating, boxing, badminton, body building and acrobatic sports were those sports, where the higher risk of cannabis use was observed. The legal interpretation of some positive cannabinoids results would be difficult because of some accidental and unintentional use of the narcotics by sportsmen. It was concluded that national anti-doping organizations (NADO’s, which are competent to judge whether the anti-doping rules were violated, should take into account the possibility of non-intentional doping use of cannabinoids via passive smoking of marijuana.

  17. Etched ion track polymer membranes for sustained drug delivery

    International Nuclear Information System (INIS)

    Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

    2003-01-01

    The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

  18. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  19. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  20. Optimization of some electrochemical etching parameters for cellulose derivatives

    International Nuclear Information System (INIS)

    Chowdhury, Annis; Gammage, R.B.

    1978-01-01

    Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

  1. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  2. Composite adaptive control of belt polishing force for aero-engine blade

    Science.gov (United States)

    Zhsao, Pengbing; Shi, Yaoyao

    2013-09-01

    The existing methods for blade polishing mainly focus on robot polishing and manual grinding. Due to the difficulty in high-precision control of the polishing force, the blade surface precision is very low in robot polishing, in particular, quality of the inlet and exhaust edges can not satisfy the processing requirements. Manual grinding has low efficiency, high labor intensity and unstable processing quality, moreover, the polished surface is vulnerable to burn, and the surface precision and integrity are difficult to ensure. In order to further improve the profile accuracy and surface quality, a pneumatic flexible polishing force-exerting mechanism is designed and a dual-mode switching composite adaptive control(DSCAC) strategy is proposed, which combines Bang-Bang control and model reference adaptive control based on fuzzy neural network(MRACFNN) together. By the mode decision-making mechanism, Bang-Bang control is used to track the control command signal quickly when the actual polishing force is far away from the target value, and MRACFNN is utilized in smaller error ranges to improve the system robustness and control precision. Based on the mathematical model of the force-exerting mechanism, simulation analysis is implemented on DSCAC. Simulation results show that the output polishing force can better track the given signal. Finally, the blade polishing experiments are carried out on the designed polishing equipment. Experimental results show that DSCAC can effectively mitigate the influence of gas compressibility, valve dead-time effect, valve nonlinear flow, cylinder friction, measurement noise and other interference on the control precision of polishing force, which has high control precision, strong robustness, strong anti-interference ability and other advantages compared with MRACFNN. The proposed research achieves high-precision control of the polishing force, effectively improves the blade machining precision and surface consistency, and

  3. Monitoring of Robot Assisted Polishing through parameters of acoustic emission

    DEFF Research Database (Denmark)

    Lazarev, Ruslan; Top, Søren; Bilberg, Arne

    The polishing process is essential for the surface generation of machine tooling components in advanced manufacturing. While robot assisted polishing is faster and more consistent than manual polishing, it can still consume a significant part of ma- chining time and operator presence time...

  4. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  5. Trace element analysis of nail polishes

    International Nuclear Information System (INIS)

    Misra, G.; Mittal, V.K.; Sahota, H.S.

    1999-01-01

    Instrumental neutron activation analysis (INAA) technique was used to measure the concentrations of various trace elements in nail polishes of popular Indian and foreign brands. The aim of the present experiment was to see whether trace elements could distinguish nail polishes of different Indian and foreign brands from forensic point of view. It was found that cesium can act as a marker to differentiate foreign and Indian brands. (author)

  6. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  7. Etch induction time in cellulose nitrate: a new particle identification parameter

    International Nuclear Information System (INIS)

    Ruddy, F.H.; Knowles, H.B.; Luckstead, S.C.; Tripard, G.E.

    1977-01-01

    By the use of a 'continuous etch' method, it has been ascertained that particle tracks do not appear in cellulose nitrate track detectors until a certain finite time after etch has been started: this etch induction time may provide a unique signal for distinguishing ions of different atomic number, Z, and possibly also resolving the mass, M, of such ions. Empirical relations between etch induction time and various experimental quantities are described, as is a simple theory of the cause of etch induction time, which can be related to experimental evidence on hand. There is reason to believe that etch induction time appears in other types of plastic track detectors and may indeed be a general phenomenon in all track detectors. (Auth.)

  8. Feedback control of chlorine inductively coupled plasma etch processing

    International Nuclear Information System (INIS)

    Lin Chaung; Leou, K.-C.; Shiao, K.-M.

    2005-01-01

    Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

  9. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    International Nuclear Information System (INIS)

    Kakati, A; Maji, D; Das, S

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µ m thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C 16 H 36 FN) and tetra-n-butylammonium fluoride (C 5 H 9 NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µ m min −1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5–15 gm l −1 of silicic acid (SiO 2xH2 O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µ m etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures. (paper)

  10. Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

    NARCIS (Netherlands)

    Sokolovskij, R.; Sun, J.; Santagata, F.; Iervolino, E.; Li, S.; Zhang, G.Y.; Sarro, P.M.; Zhang, G.Q.

    2016-01-01

    A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O2 plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported

  11. Factors influencing the surface quality of polished tool steels

    International Nuclear Information System (INIS)

    Rebeggiani, S; Rosén, B-G

    2014-01-01

    Today’s demands on surface quality of moulds for injection moulding of plastic components involve no/low defect contents and roughness levels in the nm-range for high gloss applications. Material properties as well as operating conditions influence the mould finish, and thus the final surface of moulded products. This paper focuses on how particle content and different polishing strategies influence final surface qualities of moulds. Visual estimations of polished tool steel samples were combined with non-contact 3D-surface texture analysis in order to correlate traditional assessments to more quantitative methods, and to be able to analyse the surfaces at nanometre-level. It was found that steels with a lower proportion of particles, like carbides and oxides, gave rise to smoother polished surfaces. In a comparative study of polishers from different polishing shops, it was found that while different surface preparation strategies can lead to similar final roughness, similar preparation techniques can produce high-quality surfaces from different steel grades. However, the non-contact 3D-surface texture analysis showed that not all smooth polished surfaces have desirable functional topographies for injection moulding of glossy plastic components. (paper)

  12. New perspectives in hydrodynamic radial polishing techniques for optical surfaces

    Science.gov (United States)

    Ruiz, Elfego; Sohn, Erika; Luna, Esteban; Salas, Luis; Cordero, Alberto; González, Jorge; Núñez, Manuel; Salinas, Javier; Cruz-González, Irene; Valdés, Jorge; Cabrera, Victor; Martínez, Benjamín

    2004-09-01

    In order to overcome classic polishing techniques, a novel hydrodynamic radial polishing tool (HyDRa) is presented; it is useful for the corrective lapping and fine polishing of diverse materials by means of a low-cost abrasive flux and a hydrostatic suspension system that avoids contact of the tool with the working surface. This tool enables the work on flat or curved surfaces of currently up to two and a half meters in diameter. It has the advantage of avoiding fallen edges during the polishing process as well as reducing tool wear out and deformation. The functioning principle is based on the generation of a high-velocity, high-pressure, abrasive emulsion flux with radial geometry. The polishing process is repeatable by means of the control of the tool operational parameters, achieving high degrees of precision and accuracy on optical and semiconductor surfaces, with removal rates of up to 9 mm3/hour and promising excellent surface polishing qualities. An additional advantage of this new tool is the possibility to perform interferometric measurements during the polishing process without the need of dismounting the working surface. A series of advantages of this method, numerical simulations and experimental results are described.

  13. Future developments in etched track detectors for neutron dosimetry

    International Nuclear Information System (INIS)

    Tommasino, L.

    1987-01-01

    Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

  14. Design and kinetic analysis of hammerhead ribozyme and DNAzyme that specifically cleave TEL-AML1 chimeric mRNA

    International Nuclear Information System (INIS)

    Choi, Woo-Hyung; Choi, Bo-Ra; Kim, Jae Hyun; Yeo, Woon-Seok; Oh, Sangtaek; Kim, Dong-Eun

    2008-01-01

    In order to develop the oligonucleotides to abolish an expression of TEL-AML1 chimeric RNA, which is a genetic aberration that causes the acute lymphoblastic leukemia (ALL), hammerhead ribozymes and deoxyoligoribozymes that can specifically cleave TEL-AML1 fusion RNA were designed. Constructs of the deoxyribozyme with an asymmetric substrate binding arm (Dz26) and the hammerhead ribozyme with a 4 nt-bulged substrate binding arm in the stem III (buRz28) were able to cleave TEL-AML1 chimeric RNA specifically at sites close to the junction in vitro, without cleaving the normal TEL and AML1 RNA. Single-turnover kinetic analysis under enzyme-excess condition revealed that the buRz28 is superior to the Dz26 in terms of substrate binding and RNA-cleavage. In conjunction with current progress in a gene-delivery technology, the designed oligonucleotides that specifically cleave the TEL-AML1 chimeric mRNA are hoped to be applicable for the treatment of ALL in vivo

  15. Simple Room Temperature Method for Polymer Optical Fibre Cleaving

    DEFF Research Database (Denmark)

    Saez-Rodriguez, David; Nielsen, Kristian; Bang, Ole

    2015-01-01

    In this paper, we report on a new method to cleave polymer optical fibre. The most common way to cut a polymer optical fibre is chopping it with a razor blade; however, in this approach both the fibre and the blade must be preheated in order to turn the material ductile, and thus, prevent crazing...... of similar quality to those produced by more complex and expensive heated systems....

  16. Ion track etching revisited: II. Electronic properties of aged tracks in polymers

    Science.gov (United States)

    Fink, D.; Muñoz Hernández, G.; Cruz, S. A.; Garcia-Arellano, H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

    2018-02-01

    We compile here electronic ion track etching effects, such as capacitive-type currents, current spike emission, phase shift, rectification and background currents that eventually emerge upon application of sinusoidal alternating voltages across thin, aged swift heavy ion-irradiated polymer foils during etching. Both capacitive-type currents and current spike emission occur as long as obstacles still prevent a smooth continuous charge carrier passage across the foils. In the case of sufficiently high applied electric fields, these obstacles are overcome by spike emission. These effects vanish upon etchant breakthrough. Subsequent transmitted currents are usually of Ohmic type, but shortly after breakthrough (during the track' core etching) often still exhibit deviations such as strong positive phase shifts. They stem from very slow charge carrier mobility across the etched ion tracks due to retarding trapping/detrapping processes. Upon etching the track's penumbra, one occasionally observes a split-up into two transmitted current components, one with positive and another one with negative phase shifts. Usually, these phase shifts vanish when bulk etching starts. Current rectification upon track etching is a very frequent phenomenon. Rectification uses to inverse when core etching ends and penumbra etching begins. When the latter ends, rectification largely vanishes. Occasionally, some residual rectification remains which we attribute to the aged polymeric bulk itself. Last not least, we still consider background currents which often emerge transiently during track etching. We could assign them clearly to differences in the electrochemical potential of the liquids on both sides of the etched polymer foils. Transient relaxation effects during the track etching cause their eventually chaotic behaviour.

  17. Quantitative morphological and compositional evaluation of laboratory prepared aluminoborosilicate glass surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yuxuan, E-mail: yg4@alfred.edu; Wren, Anthony W.; Mellott, Nathan P.

    2015-01-01

    Graphical abstract: - Highlights: • Aluminoborosilicate glass surfaces were prepared through both melting and polishing/etching and the surface composition and morphology were quantified as a function of processing method. • Glass surface morphology was quantified using PSD analysis, followed by both fractal and ABC model fitting, resulting in a comprehensive description of the spatial distribution of roughness. • All melt surfaces showed a depletion in Na, Ca, and B with respect to the bulk composition. Polished/etched surfaces showed a depletion in Na, B, and Al with respect to the bulk composition. • It was found that increasing heat treatment temperature of melt surfaces lead to a decrease in equivalent roughness and an increased spatial homogeneity of roughness while etching of polished ISG glass surfaces decreases the roughness and spatial distribution homogeneity of roughness. - Abstract: Surface finishing techniques including polishing, etching and heat treatment can modify the topography and the surface chemical composition of glasses. It is widely acknowledged that atomic force microscopy (AFM) can be used to quantify the morphology of surfaces, providing various parameters including average, peak-to-valley, and apparent root-mean-square roughness. Furthermore advanced power spectral density (PSD) analysis of AFM-derived surface profiles offers quantification of the spatial homogeneity of roughness values along different wavelengths, resulting in parameters including equivalent RMS, Hurst exponent, and fractal dimension. Outermost surface (∼8 nm) chemical composition can be quantitatively measured by X-ray photoelectron spectroscopy. In this paper, we first developed a series of surface finishing methods for an aluminoborosilicate glass system by polishing, etching or heat treatment. The chemical composition and environment of prepared glass surfaces were quantified by XPS and topographical analysis was carried out by fractal and k

  18. Modeling of block copolymer dry etching for directed self-assembly lithography

    Science.gov (United States)

    Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

    2018-03-01

    Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

  19. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2018-06-01

    The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

  20. Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

    Directory of Open Access Journals (Sweden)

    Ana Carolina Maito Villela-Rosa

    2011-04-01

    Full Text Available The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same specimens prepared for the evaluation of superficial dentin shear resistance were used to evaluate the different depths of dentin. The specimens were identified and abraded at depths of 0.5, 1.0, 1.5 and 2.0 mm. Each depth was evaluated by ISO TR 11405 using an EMIC-2000 machine regulated at 0.5 mm/min with a 200 Kgf load cell. We performed statistical analyses on the results (ANOVA, Tukey and Scheffé tests. Data revealed statistical differences (p < 0.01 in the adhesive and depth variation as well as adhesive/depth interactions. The Adper Single Bond 2 demonstrated the highest mean values of shear bond strength. The Prompt L-Pop product, a self-etching adhesive, revealed higher mean values compared with Magic Bond DE and Self Etch Bond adhesives, a total and self-etching adhesive respectively. It may be concluded that the shear bond strength of dentin is dependent on material (adhesive system, substrate depth and adhesive/depth interaction.

  1. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  2. Damage-free polishing of monocrystalline silicon wafers without chemical additives

    International Nuclear Information System (INIS)

    Biddut, A.Q.; Zhang, L.C.; Ali, Y.M.; Liu, Z.

    2008-01-01

    This investigation explores the possibility and identifies the mechanism of damage-free polishing of monocrystalline silicon without chemical additives. Using high resolution electron microscopy and contact mechanics, the study concludes that a damage-free polishing process without chemicals is feasible. All forms of damages, such as amorphous Si, dislocations and plane shifting, can be eliminated by avoiding the initiation of the β-tin phase of silicon during polishing. When using 50 nm abrasives, the nominal pressure to achieve damage-free polishing is 20 kPa

  3. Computer-Controlled Cylindrical Polishing Process for Large X-Ray Mirror Mandrels

    Science.gov (United States)

    Khan, Gufran S.; Gubarev, Mikhail; Speegle, Chet; Ramsey, Brian

    2010-01-01

    We are developing high-energy grazing incidence shell optics for hard-x-ray telescopes. The resolution of a mirror shells depends on the quality of cylindrical mandrel from which they are being replicated. Mid-spatial-frequency axial figure error is a dominant contributor in the error budget of the mandrel. This paper presents our efforts to develop a deterministic cylindrical polishing process in order to keep the mid-spatial-frequency axial figure errors to a minimum. Simulation software is developed to model the residual surface figure errors of a mandrel due to the polishing process parameters and the tools used, as well as to compute the optical performance of the optics. The study carried out using the developed software was focused on establishing a relationship between the polishing process parameters and the mid-spatial-frequency error generation. The process parameters modeled are the speeds of the lap and the mandrel, the tool s influence function, the contour path (dwell) of the tools, their shape and the distribution of the tools on the polishing lap. Using the inputs from the mathematical model, a mandrel having conical approximated Wolter-1 geometry, has been polished on a newly developed computer-controlled cylindrical polishing machine. The preliminary results of a series of polishing experiments demonstrate a qualitative agreement with the developed model. We report our first experimental results and discuss plans for further improvements in the polishing process. The ability to simulate the polishing process is critical to optimize the polishing process, improve the mandrel quality and significantly reduce the cost of mandrel production

  4. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    OpenAIRE

    Ajay Kumar; Dr. Pramod Kumar

    2014-01-01

    This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

  5. Study on the etched carnelian beads unearthed in China

    Institute of Scientific and Technical Information of China (English)

    Deyun Zhao

    2014-01-01

    Etched carnelian beads originated in the Indus Civilization;this kind of ornaments and its manufacturing techniques were spread to the whole Eurasia Continent.The etched carnelian beads unearthed in China can be classified into four types,the comparisons of which to their foreign counterparts may reveal their different sources and diffusion routes.The etched carnelian beads and their glass imitations unearthed in China had influences to the making of the glass "eye beads" in

  6. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    International Nuclear Information System (INIS)

    Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

    2017-01-01

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co_3O_4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co_3O_4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  7. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

    2017-04-30

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  8. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E H; Miao Jianmin; Sun Jianbo

    2006-01-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  9. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  10. Pattern transfer with stabilized nanoparticle etch masks

    International Nuclear Information System (INIS)

    Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

    2013-01-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

  11. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  12. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

  13. T. thermophila group I introns that cleave amide bonds

    Science.gov (United States)

    Joyce, Gerald F. (Inventor)

    1997-01-01

    The present invention relates to nucleic acid enzymes or enzymatic RNA molecules that are capable of cleaving a variety of bonds, including phosphodiester bonds and amide bonds, in a variety of substrates. Thus, the disclosed enzymatic RNA molecules are capable of functioning as nucleases and/or peptidases. The present invention also relates to compositions containing the disclosed enzymatic RNA molecule and to methods of making, selecting, and using such enzymes and compositions.

  14. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  15. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    International Nuclear Information System (INIS)

    Choi, D.Y.; Lee, J.H.; Kim, D.S.; Jung, S.T.

    2004-01-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit

  16. Can Reduced-Step Polishers Be as Effective as Multiple-Step Polishers in Enhancing Surface Smoothness?

    Science.gov (United States)

    Kemaloglu, Hande; Karacolak, Gamze; Turkun, L Sebnem

    2017-02-01

    The aim of this study was to evaluate the effects of various finishing and polishing systems on the final surface roughness of a resin composite. Hypotheses tested were: (1) reduced-step polishing systems are as effective as multiple-step systems on reducing the surface roughness of a resin composite and (2) the number of application steps in an F/P system has no effect on reducing surface roughness. Ninety discs of a nano-hybrid resin composite were fabricated and divided into nine groups (n = 10). Except the control, all of the specimens were roughened prior to be polished by: Enamel Plus Shiny, Venus Supra, One-gloss, Sof-Lex Wheels, Super-Snap, Enhance/PoGo, Clearfil Twist Dia, and rubber cups. The surface roughness was measured and the surfaces were examined under scanning electron microscope. Results were analyzed with analysis of variance and Holm-Sidak's multiple comparisons test (p One-gloss, Enamel Plus Shiny, and Venus Supra groups. (1) The number of application steps has no effect on the performance of F/P systems. (2) Reduced-step polishers used after a finisher can be preferable to multiple-step systems when used on nanohybrid resin composites. (3) The effect of F/P systems on surface roughness seems to be material-dependent rather than instrument- or system-dependent. Reduced-step systems used after a prepolisher can be an acceptable alternative to multiple-step systems on enhancing the surface smoothness of a nanohybrid composite; however, their effectiveness depends on the materials' properties. (J Esthet Restor Dent 29:31-40, 2017). © 2016 Wiley Periodicals, Inc.

  17. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    International Nuclear Information System (INIS)

    Castro, F L A; Carvalho, J G; Andrade, M F; Saad, J R C; Hebling, J; Lizarelli, R F Z

    2014-01-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm 2 ) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin. (paper)

  18. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  19. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M.P.; Hihn, J.Y., E-mail: jean-yves.hihn@univ-fcomte.fr

    2015-11-15

    Graphical abstract: Result of an etching step in ultrasound presence on intermetallic particles on a 2024 aluminum alloy. - Highlights: • Etching step prior to anodization on 2024 aluminum alloy. • Etching rate measurement and hydroxide film characterization by GDOES and SEM. • Various etching parameters (temperature, presence or absence of ultrasound). • Improvement of corrosion resistance show by electrochemical tests. - Abstract: Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  20. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    International Nuclear Information System (INIS)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M.P.; Hihn, J.Y.

    2015-01-01

    Graphical abstract: Result of an etching step in ultrasound presence on intermetallic particles on a 2024 aluminum alloy. - Highlights: • Etching step prior to anodization on 2024 aluminum alloy. • Etching rate measurement and hydroxide film characterization by GDOES and SEM. • Various etching parameters (temperature, presence or absence of ultrasound). • Improvement of corrosion resistance show by electrochemical tests. - Abstract: Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  1. Surface geometry of three packable and one hybrid composite after polishing.

    Science.gov (United States)

    Jung, Martin; Bruegger, Hilka; Klimek, Joachim

    2003-01-01

    This study evaluated the surface quality of four composite materials after polishing with six different polishing techniques. Eighty specimens were made using three packable composites (Definite/Degussa, SureFil/ Dentsply and Solitaire/Heraeus-Kulzer) and one hybrid composite (Herculite XRV/Kerr). Five specimens of each material were polished using flexible Sof-Lex discs. The remaining 75 specimens of each composite were prepared using three finishing protocols: a single 30 microm diamond (n = 25), two finishing diamonds (30/20 microm; n = 25) and a 30 microm diamond followed by a tungsten carbide finishing bur (n = 25). Final polishing of each of the three finishing groups was accomplished with SuperBuff, Diafix-oral, OneGloss, Astropol and HaWe Composite Polishers (n = 5, each). Surface roughness was evaluated quantitatively by laser-stylus profilometry. Average roughness (R(a)) was calculated; statistical analysis of the data was performed with two-way ANOVA and Scheffé post-hoc tests. The polished surfaces were examined qualitatively by SEM. The results showed significant effects on surface roughness from the different composites (p = 0.011) and polishing systems (p < 0.001). After polishing, the Solitaire surfaces (R(a) = 0.72 microm) were smoother than Definite (R(a) = 0.87 microm) and SureFil (R(a) = 0.89 microm) and significantly smoother than Herculite (R(a) = 0.92 microm; p = 0.011). Three of the polishing methods (SuperBuff, Diafix-oral and Astropol) achieved lower R(a)-values than Sof-Lex discs. The polishing quality of the one-step systems SuperBuff and Diafix-oral was strongly affected by the initial finishing protocol.

  2. Study of Profile Changes during Mechanical Polishing using Relocation Profilometry

    Science.gov (United States)

    Kumaran, S. Chidambara; Shunmugam, M. S.

    2017-10-01

    Mechanical polishing is a finishing process practiced conventionally to enhance quality of surface. Surface finish is improved by mechanical cutting action of abrasive particles on work surface. Polishing is complex in nature and research efforts have been focused on understanding the polishing mechanism. Study of changes in profile is a useful method of understanding behavior of the polishing process. Such a study requires tracing same profile at regular process intervals, which is a tedious job. An innovative relocation technique is followed in the present work to study profile changes during mechanical polishing of austenitic stainless steel specimen. Using special locating fixture, micro-indentation mark and cross-correlation technique, the same profile is traced at certain process intervals. Comparison of different parameters of profiles shows the manner in which metal removal takes place in the polishing process. Mass removal during process estimated by the same relocation technique is checked with that obtained using weight measurement. The proposed approach can be extended to other micro/nano finishing processes and favorable process conditions can be identified.

  3. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  4. Development of hybrid fluid jet/float polishing process

    Science.gov (United States)

    Beaucamp, Anthony T. H.; Namba, Yoshiharu; Freeman, Richard R.

    2013-09-01

    On one hand, the "float polishing" process consists of a tin lap having many concentric grooves, cut from a flat by single point diamond turning. This lap is rotated above a hydrostatic bearing spindle of high rigidity, damping and rotational accuracy. The optical surface thus floats above a thin layer of abrasive particles. But whilst surface texture can be smoothed to ~0.1nm rms (as measured by atomic force microscopy), this process can only be used on flat surfaces. On the other hand, the CNC "fluid jet polishing" process consists of pumping a mixture of water and abrasive particles to a converging nozzle, thus generating a polishing spot that can be moved along a tool path with tight track spacing. But whilst tool path feed can be moderated to ultra-precisely correct form error on freeform optical surfaces, surface finish improvement is generally limited to ~1.5nm rms (with fine abrasives). This paper reports on the development of a novel finishing method, that combines the advantages of "fluid jet polishing" (i.e. freeform corrective capability) with "float polishing" (i.e. super-smooth surface finish of 0.1nm rms or less). To come up with this new "hybrid" method, computational fluid dynamic modeling of both processes in COMSOL is being used to characterize abrasion conditions and adapt the process parameters of experimental fluid jet polishing equipment, including: (1) geometrical shape of nozzle, (2) position relative to the surface, (3) control of inlet pressure. This new process is aimed at finishing of next generation X-Ray / Gamma Ray focusing optics.

  5. An evaluation of shear bond strength of self-etch adhesive on pre-etched enamel: an in vitro study.

    Science.gov (United States)

    Rao, Bhadra; Reddy, Satti Narayana; Mujeeb, Abdul; Mehta, Kanchan; Saritha, G

    2013-11-01

    To determine the shear bond strength of self-etch adhesive G-bond on pre-etched enamel. Thirty caries free human mandibular premolars extracted for orthodontic purpose were used for the study. Occlusal surfaces of all the teeth were flattened with diamond bur and a silicon carbide paper was used for surface smoothening. The thirty samples were randomly grouped into three groups. Three different etch systems were used for the composite build up: group 1 (G-bond self-etch adhesive system), group 2 (G-bond) and group 3 (Adper single bond). Light cured was applied for 10 seconds with a LED unit for composite buildup on the occlusal surface of each tooth with 8 millimeters (mm) in diameter and 3 mm in thickness. The specimens in each group were tested in shear mode using a knife-edge testing apparatus in a universal testing machine across head speed of 1 mm/ minute. Shear bond strength values in Mpa were calculated from the peak load at failure divided by the specimen surface area. The mean shear bond strength of all the groups were calculated and statistical analysis was carried out using one-way Analysis of Variance (ANOVA). The mean bond strength of group 1 is 15.5 Mpa, group 2 is 19.5 Mpa and group 3 is 20.1 Mpa. Statistical analysis was carried out between the groups using one-way ANOVA. Group 1 showed statistically significant lower bond strength when compared to groups 2 and 3. No statistical significant difference between groups 2 and 3 (p adhesive G-bond showed increase in shear bond strength on pre-etched enamel.

  6. Understanding and controlling the step bunching instability in aqueous silicon etching

    Science.gov (United States)

    Bao, Hailing

    Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

  7. Surface studies of niobium chemically polished under conditions for superconducting radio frequency (SRF) cavity production

    Science.gov (United States)

    Tian, Hui; Reece, Charles E.; Kelley, Michael J.; Wang, Shancai; Plucinski, Lukasz; Smith, Kevin E.; Nowell, Matthew M.

    2006-11-01

    The performance of niobium superconducting radiofrequency (SRF) accelerator cavities is strongly impacted by the topmost several nanometers of the active (interior) surface, especially as influenced by the final surface conditioning treatments. We examined the effect of the most commonly employed treatment, buffered chemical polishing (BCP), on polycrystalline niobium sheet over a range of realistic solution flow rates using electron back scatter diffraction (EBSD), stylus profilometry, atomic force microscopy, laboratory XPS and synchrotron (variable photon energy) XPS, seeking to collect statistically significant datasets. We found that the predominant general surface orientation is (1 0 0), but others are also present and at the atomic-level details of surface plane orientation are more complex. The post-etch surface exhibits micron-scale roughness, whose extent does not change with treatment conditions. The outermost surface consists of a few-nm thick layer of niobium pentoxide, whose thickness increases with solution flow rate to a maximum of 1.3-1.4 times that resulting from static solution. The standard deviation of the roughness measurements is ±30% and that of the surface composition is ±5%.

  8. Surface studies of niobium chemically polished under conditions for superconducting radio frequency (SRF) cavity production

    Energy Technology Data Exchange (ETDEWEB)

    Tian Hui [Thomas Jefferson National Accelerator Facility and College of William and Mary (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility and College of William and Mary (United States); Kelley, Michael J. [Thomas Jefferson National Accelerator Facility and College of William and Mary (United States)]. E-mail: mkelley@jlab.org; Wang Shancai [Department of Physics, Boston University (United States); Plucinski, Lukasz [Department of Physics, Boston University (United States); Smith, Kevin E. [Department of Physics, Boston University (United States); Nowell, Matthew M. [EDAX TSL (United States)

    2006-11-30

    The performance of niobium superconducting radiofrequency (SRF) accelerator cavities is strongly impacted by the topmost several nanometers of the active (interior) surface, especially as influenced by the final surface conditioning treatments. We examined the effect of the most commonly employed treatment, buffered chemical polishing (BCP), on polycrystalline niobium sheet over a range of realistic solution flow rates using electron back scatter diffraction (EBSD), stylus profilometry, atomic force microscopy, laboratory XPS and synchrotron (variable photon energy) XPS, seeking to collect statistically significant datasets. We found that the predominant general surface orientation is (1 0 0), but others are also present and at the atomic-level details of surface plane orientation are more complex. The post-etch surface exhibits micron-scale roughness, whose extent does not change with treatment conditions. The outermost surface consists of a few-nm thick layer of niobium pentoxide, whose thickness increases with solution flow rate to a maximum of 1.3-1.4 times that resulting from static solution. The standard deviation of the roughness measurements is {+-}30% and that of the surface composition is {+-}5%.

  9. Surface Studies of Niobium Chemically Polished Under Conditions for Superconducting Radio Frequency (SRF) Cavity Production

    Energy Technology Data Exchange (ETDEWEB)

    Tian,H.; Reece, C.; Kelley, M.; Wang, S.; Plucinski, L.; Smith, K.; Nowell, M.

    2006-01-01

    The performance of niobium superconducting radiofrequency (SRF) accelerator cavities is strongly impacted by the topmost several nanometers of the active (interior) surface, especially as influenced by the final surface conditioning treatments. We examined the effect of the most commonly employed treatment, buffered chemical polishing (BCP), on polycrystalline niobium sheet over a range of realistic solution flow rates using electron back scatter diffraction (EBSD), stylus profilometry, atomic force microscopy, laboratory XPS and synchrotron (variable photon energy) XPS, seeking to collect statistically significant datasets. We found that the predominant general surface orientation is (1 0 0), but others are also present and at the atomic-level details of surface plane orientation are more complex. The post-etch surface exhibits micron-scale roughness, whose extent does not change with treatment conditions. The outermost surface consists of a few-nm thick layer of niobium pentoxide, whose thickness increases with solution flow rate to a maximum of 1.3-1.4 times that resulting from static solution. The standard deviation of the roughness measurements is {+-}30% and that of the surface composition is {+-}5%.

  10. Laser etching of enamel for direct bonding - An in vitro study

    Directory of Open Access Journals (Sweden)

    Rajesh K Reddy

    2010-01-01

    Full Text Available The aim of the study was to determine the shear bond strength of mesh shaped stainless steel orthodontic brackets, bonded to acid etched enamel and laser etched enamel and to compare the shear bond strength following acid etching and laser etching. 50 non carious extracted premolar teeth divided in to 5 groups of 10 each were employed in the study. The buccal surfaces of group - I were subjected to conventional etching using 37% phosphoric acid for 30 seconds, while the other four groups were subjected to Nd:YAG laser etching at different power settings of 80mj, 100mj, 150mj and 200mj respectively for 15 seconds. Brackets were later bonded on to these teeth using Ultimate- light curing primer and adhesive. The shear bond strength of each sample was determined using a universal testing machine and the results were evaluated.

  11. Sensory factors affecting female consumers' acceptability of nail polish.

    Science.gov (United States)

    Sun, C; Koppel, K; Adhikari, K

    2015-12-01

    The objectives of this study were to determine what sensory factors impact consumers' acceptability of nail polishes, to explore how these sensory factors impact consumers' acceptability of nail polishes, to investigate whether there are any consumer segments according to their overall acceptability on different nail polishes and to scrutinize how the consumer segments are related to the sensory factors. Ninety-eight females participated in a nail polish consumer study at Kansas State University. Eight commercial products belonging to four categories - regular (REG), gel (GEL), flake (FLK) and water-based (WAT) - were evaluated. Each nail polish sample was evaluated twice by each participant in two different tasks - a task devoted to applying and evaluating the product and a task devoted to observing the appearance and evaluating the product. Pearson's correlation analysis, analysis of variance (ANOVA), external preference mapping, cluster analysis and internal preference mapping were applied for data analysis. Participants' scores of overall liking of the nail polishes were similar in the application task and in the observation task. In general, participants liked the REG and GEL product samples more than the FLK and WAT samples. Among all the sensory attributes, appearance attributes were the major factors that affected participants' overall liking. Aroma seemed to be a minor factor to participants' overall liking. Some sensory attributes, such as runny, shininess, opacity, spreadability, smoothness, coverage and wet appearance, were found to drive participants' overall acceptability positively, whereas others such as pinhole, fatty-edges, blister, brushlines, pearl-like, flake-protrusion, glittery and initial-drag impacted participants' overall acceptability negatively. Four clusters of participants were identified according to their overall liking scores from both the application task and the observation task. Participants' acceptability, based on different

  12. Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

    Science.gov (United States)

    Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

    2018-06-01

    A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

  13. Aspartic protease activities of schistosomes cleave mammalian hemoglobins in a host-specific manner

    Directory of Open Access Journals (Sweden)

    Jeffrey W Koehler

    2007-02-01

    Full Text Available We examined the efficiency of digestion of hemoglobin from four mammalian species, human, cow, sheep, and horse by acidic extracts of mixed sex adults of Schistosoma japonicum and S. mansoni. Activity ascribable to aspartic protease(s from S. japonicum and S. mansoni cleaved human hemoglobin. In addition, aspartic protease activities from S. japonicum cleaved hemoglobin from bovine, sheep, and horse blood more efficiently than did the activity from extracts of S. mansoni. These findings support the hypothesis that substrate specificity of hemoglobin-degrading proteases employed by blood feeding helminth parasites influences parasite host species range; differences in amino acid sequences in key sites of the parasite proteases interact less or more efficiently with the hemoglobins of permissive or non-permissive hosts.

  14. Note on the polishing of small spheres of ferrimagnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Grunberg, J. G.; Antier, G. [Centre d' etudes nucleaires de Grenoble - C.E.N.G. (France); Seiden, P. E. [Institut Fourier, Universite de Grenoble (France)

    1961-07-01

    This note describes a simple and rapid method that we have used for obtaining a high degree of polish on spheres of ferrimagnetic materials. A high surface polish is of particular importance if one desires to perform ferrimagnetic resonance experiments on very narrow linewidth materials such as Yttrium Iron Garnet. It is not possible to obtain the very narrow linewidths without polishing the sample with a very fine abrasive such as 'Linde A'. Although the methods presently used for the fine polishing of ferrite spheres give satisfactory results, the method described here is of particular interest because of its simplicity and speed. For example with the air-jet tumbling technique it can take as long as three days of polishing to obtain an acceptable surface while our method will give the same results in one to two hours. (author)

  15. Polish energy-system modernisation

    International Nuclear Information System (INIS)

    Drozdz, M.

    2003-01-01

    The Polish energy-system needs intensive investments in new technologies, which are energy efficient, clean and cost effective. Since the early 1990s, the Polish economy has had practically full access to modern technological devices, equipment and technologies. Introducing new technologies is a difficult task for project teams, constructors and investors. The author presents a set of principles for project teams useful in planning and energy modernisation. Several essential features are discussed: Energy-efficient appliances and systems; Choice of energy carriers, media and fuels; Optimal tariffs, maximum power and installed power; Intelligent, integrated, steering systems; Waste-energy recovery; Renewable-energy recovery. In practice there are several difficulties connected with planning and realising good technological and economic solutions. The author presents his own experiences of energy-system modernisation of industrial processes and building new objects. (Author)

  16. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  17. Initial polishing time affects gloss retention in resin composites.

    Science.gov (United States)

    Waheeb, Nehal; Silikas, Nick; Watts, David

    2012-10-01

    To determine the effect of finishing and polishing time on the surface gloss of various resin-composites before and after simulated toothbrushing. Eight representative resin-composites (Ceram X mono, Ceram X duo, Tetric EvoCeram, Venus Diamond, EsteliteSigma Quick, Esthet.X HD, Filtek Supreme XT and Spectrum TPH) were used to prepare 80 disc-shaped (12 mm x 2 mm) specimens. The two step system Venus Supra was used for polishing the specimens for 3 minutes (Group A) and 10 minutes (Group B). All specimens were subjected to 16,000 cycles of simulated toothbrushing. The surface gloss was measured after polishing and after brushing using the gloss meter. Results were evaluated using one way ANOVA, two ways ANOVA and Dennett's post hoc test (P = 0.05). Group B (10-minute polishing) resulted in higher gloss values (GV) for all specimens compared to Group A (3 minutes). Also Group B showed better gloss retention compared to Group A after simulated toothbrushing. In each group, there was a significant difference between the polished composite resins (P gloss after the simulated toothbrushing.

  18. Sexual Health of Polish Athletes with Disabilities

    Directory of Open Access Journals (Sweden)

    Ryszard Plinta

    2015-06-01

    Full Text Available The purpose of this study was to determine sexual functioning of Polish athletes with disabilities (including paralympians. The study encompassed 218 people with physical disabilities, aged between 18 and 45 (149 men and 69 women. The entire research population was divided into three groups: Polish paralympians (n = 45, athletes with disabilities (n = 126 and non-athletes with disabilities (n = 47. The quality of sexual life of Polish paralympians was measured by using the Polish version of Female Sexual Function Index and International Index of Erectile Function. Clinically significant erectile dysfunctions were most often diagnosed in non-athletes (83.33% with 50% result of severe erectile dysfunctions, followed by athletes and paralympians with comparable results of 56.98% and 54.17% respectively (p = 0.00388. Statistically significant clinical sexual dysfunctions concerned lubrication, orgasm as well as pain domains, and prevailed among female non-athletes (68.42%, 68.42% and 57.89%. Practising sports at the highest level has a favourable effect on the sexuality of men and women with physical disabilities. Men with physical disabilities manifest more sexual disorders than women, an aspect which should be considered by health-care professionals working with people with disabilities.

  19. The role of ion beam etching in magnetic bubble device manufacture

    International Nuclear Information System (INIS)

    Brambley, D.R.; Vanner, K.C.

    1979-01-01

    The most critical stage of fabrication of magnetic bubble memories is the etching of a pattern in a permalloy (80/20 Ni/Fe) film approximately 0.4 microns thick. The permalloy elements so made are used to produce perturbations in an externally applied magnetic bias field, and these perturbations cause the translation of magnetic bubbles within an underlying film. Devices now being produced have memory-cell sizes of less than 16 microns and require the etched features to have minimum dimensions of less than 2 microns. The only practicable way of achieving this with the requisite precision is by the use of sputter or ion beam etching. In addition, ion beam etching is used for defining gold conductor elements which perform the functions of bubble nucleation, replication and transfer. This paper briefly outlines the bubble device fabrication process, with special emphasis on the role of ion beam etching. The wafer temperature, element profile and uniformity obtained during ion beam etching are of considerable significance, and some of the factors affecting these will be discussed. Finally some of the limitations of ion beam etching will be described. (author)

  20. Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching

    Science.gov (United States)

    Yu, Eusun; Kim, Seul-Cham; Lee, Heon Ju; Oh, Kyu Hwan; Moon, Myoung-Woon

    2015-01-01

    Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic plasma etching. The first step was to form nanopillars on SiO2 layer-coated glass by using preferential CF4 plasma etching. With continuous plasma etching, the SiO2 pillars become etch-resistant masks on the glass; thus, the glass regions covered by the SiO2 pillars are etched slowly, and the regions with no SiO2 pillars are etched rapidly, resulting in nanopatterned glass. The glass surface that is etched with CF4 plasma becomes superhydrophilic because of its high surface energy, as well as its nano-scale roughness and high aspect ratio. Upon applying a subsequent hydrophobic coating to the nanostructured glass, a superhydrophobic surface was achieved. The light transmission of the glass was relatively unaffected by the nanostructures, whereas the reflectance was significantly reduced by the increase in nanopattern roughness on the glass. PMID:25791414

  1. Spot formation of radiation particles by electrochemical etching

    International Nuclear Information System (INIS)

    Nozaki, Tetsuya

    1999-01-01

    An electrochemical etching (ECE) spot formation from the top of chemical etching (CE) spot was confirmed by a series of experiments. One of polycarbonate (Iupilon) could not make the spot, because ECE spot had grown up before the microscope confirming the CE spot. Clear CEC spots by α-ray and neutron were found on Harzlas and Baryotrak, both improvements of CR-39. Under the same etching conditions, the growth of ECE spot on Harzlas was more rapid than Baryotrak, but both spots were almost the same. All CE spot by α-ray produced the CEC spots, but a part of CE circle spot by neutron formed them. (S.Y.)

  2. Metal-assisted chemical etch porous silicon formation method

    Science.gov (United States)

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  3. Optimization of permanganic etching of polyethylenes for scanning electron microscopy

    International Nuclear Information System (INIS)

    Naylor, K.L.; Phillips, P.J.

    1983-01-01

    The permanganic etching technique has been studied as a function of time, temperature, and concentration for a series of polyethylenes. Kinetic studies show that a film of reaction products builds up on the surface, impeding further etching, an effect which is greatest for the lowest-crystallinity polymers. SEM studies combined with EDS show that the film contains sulfur, potassium and some manganese. An artifact is produced by the etching process which is impossible to remove by washing procedures if certain limits of time, temperature, and concentration are exceeded. For lower-crystallinity polyethylenes multiple etching and washing steps were required for optimal resolution. Plastic deformation during specimen preparation, whether from scratches or freeze fracturing, enhances artifact formation. When appropriate procedures are used, virtually artifact-free surfaces can be produced allowing a combination of permanganic etching and scanning electron microscopy to give a rapid method for detailed morphological characterization of bulk specimens

  4. Nano/micro particle beam for ceramic deposition and mechanical etching

    International Nuclear Information System (INIS)

    Chun, Doo-Man; Kim, Min-Saeng; Kim, Min-Hyeng; Ahn, Sung-Hoon; Yeo, Jun-Cheol; Lee, Caroline Sunyong

    2010-01-01

    Nano/micro particle beam (NPB) is a newly developed ceramic deposition and mechanical etching process. Additive (deposition) and subtractive (mechanical etching) processes can be realized in one manufacturing process using ceramic nano/micro particles. Nano- or micro-sized powders are sprayed through the supersonic nozzle at room temperature and low vacuum conditions. According to the process conditions, the ceramic powder can be deposited on metal substrates without thermal damage, and mechanical etching can be conducted in the same process with a simple change of process conditions and powders. In the present work, ceramic aluminum oxide (Al 2 O 3 ) thin films were deposited on metal substrates. In addition, the glass substrate was etched using a mask to make small channels. Deposited and mechanically etched surface morphology, coating thickness and channel depth were investigated. The test results showed that the NPB provides a feasible additive and subtractive process using ceramic powders.

  5. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    Ngo, H-D; Hiess, Andre; Seidemann, Volker; Studzinski, Daniel; Lange, Martin; Leib, Juergen; Shariff, Dzafir; Ashraf, Huma; Steel, Mike; Atabo, Lilian; Reast, Jon

    2006-01-01

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  6. Novel cavitation fluid jet polishing process based on negative pressure effects.

    Science.gov (United States)

    Chen, Fengjun; Wang, Hui; Tang, Yu; Yin, Shaohui; Huang, Shuai; Zhang, Guanghua

    2018-04-01

    Traditional abrasive fluid jet polishing (FJP) is limited by its high-pressure equipment, unstable material removal rate, and applicability to ultra-smooth surfaces because of the evident air turbulence, fluid expansion, and a large polishing spot in high-pressure FJP. This paper presents a novel cavitation fluid jet polishing (CFJP) method and process based on FJP technology. It can implement high-efficiency polishing on small-scale surfaces in a low-pressure environment. CFJP uses the purposely designed polishing equipment with a sealed chamber, which can generate a cavitation effect in negative pressure environment. Moreover, the collapse of cavitation bubbles can spray out a high-energy microjet and shock wave to enhance the material removal. Its feasibility is verified through researching the flow behavior and the cavitation results of the negative pressure cavitation machining of pure water in reversing suction flow. The mechanism is analyzed through a computational fluid dynamics simulation. Thus, its cavitation and surface removal mechanisms in the vertical CFJP and inclined CFJP are studied. A series of polishing experiments on different materials and polishing parameters are conducted to validate its polishing performance compared with FJP. The maximum removal depth increases, and surface roughness gradually decreases with increasing negative outlet pressures. The surface becomes smooth with the increase of polishing time. The experimental results confirm that the CFJP process can realize a high material removal rate and smooth surface with low energy consumption in the low-pressure environment, together with compatible surface roughness to FJP. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  8. High-throughput anisotropic plasma etching of polyimide for MEMS

    International Nuclear Information System (INIS)

    Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

    2011-01-01

    This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

  9. Presentation of the verbs in Bulgarian-Polish electronic dictionary

    Directory of Open Access Journals (Sweden)

    Ludmila Dimitrova

    2014-09-01

    Full Text Available Presentation of the verbs in Bulgarian-Polish electronic dictionary This paper briefly discusses the presentation of the verbs in the first electronic Bulgarian-Polish dictionary that is currently being developed under a bilateral collaboration between IMI-BAS and ISS-PAS. Special attention is given to the digital entry classifiers that describe Bulgarian and Polish verbs. Problems related to the correspondence between natural language phenomena and their presentations are discussed. Some examples illustrate the different types of dictionary entries for verbs.

  10. "Agricultural budget" and the competitiveness of the Polish agriculture

    OpenAIRE

    Lenkiewicz, Stanisław; Rokicki, Bartłomiej

    2014-01-01

    The aim of the publication is to assess the impact of public support on the functioning of the Polish agriculture. In order to achieve this aim the publication includes an analysis of the system of direct payments and rural development policy instruments planned to be implemented in Poland within the CAP 2014-2020. The study also presents an analysis of regional diversity of the Polish agriculture and an assessment of the scale of agricultural investment made in recent years in all the Polish...

  11. Etching method employing radiation

    International Nuclear Information System (INIS)

    Chapman, B.N.; Winters, H.F.

    1982-01-01

    This invention provides a method for etching a silicon oxide, carbide, nitride, or oxynitride surface using an electron or ion beam in the presence of a xenon or krypton fluoride. No additional steps are required after exposure to radiation

  12. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

  13. Influence of Application Time and Etching Mode of Universal Adhesives on Enamel Adhesion.

    Science.gov (United States)

    Sai, Keiichi; Takamizawa, Toshiki; Imai, Arisa; Tsujimoto, Akimasa; Ishii, Ryo; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

    2018-01-01

    To investigate the influence of application time and etching mode of universal adhesives on enamel adhesion. Five universal adhesives, Adhese Universal, Bondmer Lightless, Clearfil Universal Bond Quick, G-Premio Bond, and Scotchbond Universal, were used. Bovine incisors were prepared and divided into four groups of ten teeth each. SBS, Ra, and SFE were determined after the following procedures: 1. self-etch mode with immediate air blowing after application (IA); 2. self-etch mode with prolonged application time (PA); 3. etch-and-rinse mode with IA; 4. etch-and-rinse mode with PA. After 24-h water storage, the bonded assemblies were subjected to shear bond strength (SBS) tests. For surface roughness (Ra) and surface free energy (SFE) measurements, the adhesives were simply applied to the enamel and rinsed with acetone and water before the measurements were carried out. Significantly higher SBS and Ra values were obtained with etch-and-rinse mode than with self-etch mode regardless of the application time or type of adhesive. Although most adhesives showed decreased SFE values with increased application time in self-etch mode, SFE values in etch-and-rinse mode were dependent on the adhesive type and application time. Etching mode, application time, and type of adhesive significantly influenced the SBS, Ra, and SFE values.

  14. Design of etch holes to compensate spring width loss for reliable resonant frequencies

    International Nuclear Information System (INIS)

    Jang, Yun-Ho; Kim, Jong-Wan; Kim, Yong-Kweon; Kim, Jung-Mu

    2012-01-01

    A pattern width loss during the fabrication of lateral silicon resonators degrades resonant frequency reliability since such a width loss causes the significant deviation of spring stiffness. Here we present a design guide for etch holes to obtain reliable resonant frequencies by controlling etch holes geometries. The new function of an etch hole is to generate the comparable amount of the width loss between springs and etch holes, in turn to minimize the effect of the spring width loss on resonant frequency shift and deviation. An analytic expression reveals that a compensation factor (CF), defined by the circumference (C u ) of a unit etch hole divided by its silicon area (A u ), is a key parameter for reliable frequencies. The protrusive etch holes were proposed and compared with square etch holes to demonstrate the frequency reliability according to CF values and etch hole shapes. The normalized resonant frequency shift and deviation of the protrusive etch hole (−13.0% ± 6.9%) were significantly improved compared to those of a square etch hole with a small CF value (−42.8% ± 14.8%). The proposed design guide based on the CF value and protrusive shapes can be used to achieve reliable resonant frequencies for high performance silicon resonators. (technical note)

  15. Nuclear track evolution by capillary condensation during etching in SSNT detectors

    International Nuclear Information System (INIS)

    Martín-Landrove, R.; Sajo-Bohus, L.; Palacios, D.

    2013-01-01

    The microscopic process taking place during chemical etching is described in terms of a dynamic framework governed by capillary condensation. The aim is to obtain physical information on how the cone shaped tracks with curved walls evolve during chemical etching under a close examination of first principles. The results obtained with the proposed theory are compared with published values to establish their range of validity. - Highlights: ► Capillary condensation seems to play a role at early etched track evolution. ► The etched track shape and the first principles behind it are easily related. ► In spite of its simplicity, theory was able to pass stringent experimental tests. ► Theory results have a simple analytical form which includes etch induction time

  16. Computer-Controlled Cylindrical Polishing Process for Development of Grazing Incidence Optics for Hard X-Ray Region

    Science.gov (United States)

    Khan, Gufran Sayeed; Gubarev, Mikhail; Speegle, Chet; Ramsey, Brian

    2010-01-01

    The presentation includes grazing incidence X-ray optics, motivation and challenges, mid spatial frequency generation in cylindrical polishing, design considerations for polishing lap, simulation studies and experimental results, future scope, and summary. Topics include current status of replication optics technology, cylindrical polishing process using large size polishing lap, non-conformance of polishin lap to the optics, development of software and polishing machine, deterministic prediction of polishing, polishing experiment under optimum conditions, and polishing experiment based on known error profile. Future plans include determination of non-uniformity in the polishing lap compliance, development of a polishing sequence based on a known error profile of the specimen, software for generating a mandrel polishing sequence, design an development of a flexible polishing lap, and computer controlled localized polishing process.

  17. Effects of Polishing Bur Application Force and Reuse on Sintered Zirconia Surface Topography.

    Science.gov (United States)

    Fischer, N G; Tsujimoto, A; Baruth, A G

    2018-03-16

    Limited information is available on how to polish and finish zirconia surfaces following computer-aided design/computer-aided manufacturing (CAD/CAM), specifically, how differing application forces and reuse of zirconia polishing systems affect zirconia topography. To determine the effect of differing, clinically relevant, polishing application forces and multiple usages of polishing burs on the surface topography of CAD/CAM zirconia. One hundred twenty 220-grit carbide finished zirconia disks were sintered according to manufacturer's directions and divided into two groups for the study of two coarse polishing bur types. Each group was divided into subgroups for polishing (15,000 rpm) at 15 seconds for 1.0 N, 4.5 N, or 11 N of force using a purpose-built fixture. Subgroups were further divided to study the effects of polishing for the first, fifth, 15th, and 30th bur use, simulating clinical procedures. Unpolished surfaces served as a control group. Surfaces were imaged with noncontact optical profilometry (OP) and atomic force microscopy (AFM) to measure average roughness values (Ra). Polishing burs were optically examined for wear. Scanning electron microscopy (SEM) was performed on burs and zirconia surfaces. One-way ANOVA with post hoc Tukey HSD (honest significant difference) tests (α=0.05) were used for statistical analyses. AFM and OP Ra values of all polished surfaces were significantly lower than those of the unpolished control. Different polishing forces and bur reuse showed no significant differences in AFM Ra. However, significant differences in OP Ra were found due to differing application forces and bur reuse between the first and subsequent uses. SEM and optical micrographs revealed notable bur wear, increasing with increasing reuse. SEM and AFM micrographs clearly showed polished, periodic zirconia surfaces. Nanoscale topography, as analyzed with kurtosis and average groove depth, was found dependent on the specific polishing bur type. These in

  18. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...

  19. The effects of pre-etching time on the characteristic responses of electrochemically etched CR-39 neutron dosimeters

    International Nuclear Information System (INIS)

    Sohrabi, M.; Khoshnoodi, M.

    1986-01-01

    The effects of pre-etching time (PET) or duration of etching of fast-neutron-induced-recoil tracks in CR-39 in 6N KOH at 60 0 C on electrochemical etching neutron characteristic responses; i.e. sensitivity and mean recoil track diameter (MRTD) versus KOH normality up to 18N are investigated in this paper. Six sets of responses for PETs of 0, 1, 2, 3, 4, and 5 hours were obtained by using our new multi-chamber ECE (MCECE) system which reduced total operation time to about 6% of the time usually required when single-chamber ECE systems are used. The sensitivity response for zero PET showed a broad plateau and a high sensitivity low-LET peak around 16N. By increasing PET, another peak was also developed around 5N leading to 'double-humped' responses with two maximums around 5N and 16N, and a minimum around 11N. On the other hand, the MRTD responses for all PETs studied showed the same general trend with maximums around 11N. In this paper, shape of tracks under different conditions are also investigated, new optimum conditions such as KOH concentrations of 5, 11, and 15N at 25 0 C, with or without pre-etching, are recommended for tracks of lower-LET recoils including possibly protons, and alpha particle tracks over a broad energy range, and the efficiency of the MCECE system is also demonstrated. (author)

  20. Pulsed high-density plasmas for advanced dry etching processes

    International Nuclear Information System (INIS)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

    2012-01-01

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  1. The Czechoslovak-Polish Club in Brno (1925–1939)

    Czech Academy of Sciences Publication Activity Database

    Baron, Roman

    2011-01-01

    Roč. 3, č. 1 (2011), s. 43-64 ISSN 1803-6546 Institutional research plan: CEZ:AV0Z80150510 Keywords : Czechoslovak-Polish solidarity * Czechoslovak-Polish relations * Brno * associations * Interwar Period Subject RIV: AB - History

  2. Performance test of condensate polishing system for Qinshan Nuclear Power Plant

    International Nuclear Information System (INIS)

    You Zhaojin; Qian Shijun; Lu Ruiting

    1995-11-01

    The flow chart, resin performance and water quality specifications of the condensate polishing system for Qinshan Nuclear Power Plant (QNPP) are briefly described. The initial regeneration process and the following service of the condensate polishing system are introduced. And the ability to remove corrosion products and ionic impurities of the condensate polishing system are verified during start-up, normal power operation and condenser leakage of the plant. The result shows that the performance of condensate polishing system in QNPP can completely meet the design requirements. Especially during the start-up of the unit or the leakage of the condenser, despite the inlet water quality of the polishers is far worse than the specified standard, the outlet water quality is still controlled within the indexes. Finally, several existing problems, such as 'volume ratio between resins is not optimum' and 'the inert resin and anion resin can not be stratified completely', in the condensate polishing system are also discussed. (4 refs., 1 fig., 8 tabs.)

  3. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  4. Influence of polishing on surface roughness following toothbrushing wear of composite resins.

    Science.gov (United States)

    Dalla-Vecchia, Karine Battestin; Taborda, Talita Damas; Stona, Deborah; Pressi, Heloísa; Burnett Júnior, Luiz Henrique; Rodrigues-Junior, Sinval Adalberto

    2017-01-01

    This study aimed to evaluate the influence of different polishing systems on the surface roughness of composite resins following procedures to simulate the effects of toothbrushing over time. Four currently available commercial composites were used to make 128 cylindrical specimens. The specimens were randomly allocated to polishing with a 1-step polisher or 1 of 3 multistep polishers (n = 8 per group). The baseline surface roughness was measured, and the specimens were submitted to 5000, 10,000, and 20,000 brushing cycles to represent toothbrushing throughout 6, 12, and 24 months, respectively. Results showed that surface roughness was influenced by the type of composite and polishing system and was not influenced by the simulated toothbrushing time. However, the surface roughness, as challenged by toothbrushing wear, was affected by the interaction among the composite, the polisher, and the toothbrushing time. The 1-step polisher produced the highest surface roughness and influenced toothbrushing wear resistance of some composites.

  5. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  6. Suitability of N2 plasma for the RIE etching of thin Ag layers

    International Nuclear Information System (INIS)

    Hrkut, P.; Matay, L.; Kostic, I.; Bencurova, A.; Konecnikova, A.; Nemec, P.; Andok, R.; Hacsik, S.

    2013-01-01

    Silver layers of 48 nm thickness were evaporated using EB PVD on Si wafers. The masking resist layers were spin-coated and patterned by the EBDW lithography on the ZBA 21 (20 keV) (Carl-Zeiss, Jena; currently Vistec, Ltd.) variable shaped e-beam pattern generator in II SAS. In order to check the etching process in N 2 , we covered a part of the samples containing Ag with a layer of various resists. The samples were dried on a hot-plate and RIE etched in SCM 600 (1 Pa; 20 sccm; 500 W). After 8 minutes the non-masked Ag layer was completely etched away, what testified suitability of N 2 as an etching gas. Also the etch time of 4 minutes showed to be sufficient for etching through the Ag layer. In order to optimize the etching process it was necessary to estimate the etch-rate (E.R.) of suitable resist layers and of the silver layer. The (authors)

  7. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaolong; Liu, Ying, E-mail: liuychch@ustc.edu.cn; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-15

    Highlights: • SSD layer of fused silica is removed by ICP etch with surface roughness of 0.23 nm. • Metal contamination is successfully avoided by employing an isolation device. • Unique low-density plasma induced pitting damage is discovered and eliminated. • Lateral etching of SSD is avoided due to the improvement of etching anisotropy. - Abstract: In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  8. Evaluation of full-length, cleaved and nitrosylated serum surfactant protein D as biomarkers for COPD

    DEFF Research Database (Denmark)

    Duvoix, Annelyse; Miranda, Elena; Perez, Juan

    2011-01-01

    . Serum levels of SP-D are raised in individuals with COPD but there is no correlation between the serum level of SP-D and the severity of airflow obstruction. Serum SP-D is present in different forms that may have more utility as a biomarker for COPD. We report here the development of new monoclonal...... antibodies to full length and cleaved SP-D. We have assessed these and existing antibodies in 98 individuals with COPD recruited to the Evaluation of COPD Longitudinally to Identify Predictive Surrogate Endpoints (ECLIPSE) cohort. Our data show that neither monoclonal antibodies to full length nor cleaved SP...

  9. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  10. Surface analysis of polished fused-silica laser lenses by ion-scattering spectrometry

    International Nuclear Information System (INIS)

    Orvek, K.; Steward, S.A.

    1982-01-01

    New advances in high-powered glass lasers, particularly the NOVA system, have resulted in a need for lenses having higher damage threshold values than those now available. It is currently thought that surface contaminants on the lenses are responsible for initiating part of the damage. These contaminants are apparently introduced during the final polishing stages. In this study, we used ion-scattering spectrometry (ISS) to identify contaminants arising through the use of different polishing techniques. Five lenses were studied, each having undergone different polishing procedures. The first lens was not polished after receiving it from the manfacturer (No. 381). Ion microprobe data were available for this lens, and they were compared to ISS results. The second lens had been polished with rouge, a polishing compound no longer in use (No. 796). This sample served as a further check on the ISS results. The third lens was studied as received from the manufacturer - with no handling or cleaning (No. 802). The final two lenses had both been polished using high-purity ceria, cerium oxide (No. 800 and No. 801). The difference between these two was that No. 800 was polished using a nylon lap, and No. 801 was polished using pitch as a lap. The 800-series lenses were all made from the same batch, and constituted the major part of the investigation

  11. Influence of neutron irradiation on etching of SiC in KOH

    Science.gov (United States)

    Mokhov, E. N.; Kazarova, O. P.; Soltamov, V. A.; Nagalyuk, S. S.

    2017-07-01

    The effect of reactor neutron irradiation on the etch rate of SiC in potassium hydroxide has been studied. In the case of high irradiation doses (1019-1021 cm-2), the etch rate of silicon carbide has been shown to drastically rise, especially in the [0001]Si direction. This considerably mitigates the orientation anisotropy of polar face etching. After high-temperature annealing (up to 1200-1400°C), a higher etch rate of irradiated crystals persists. The results have been explained by the high concentration of radiation-induced (partially clustered) defects they contain.

  12. 1.06 μm 150 psec laser damage study of diamond turned, diamond turned/polished and polished metal mirrors

    International Nuclear Information System (INIS)

    Saito, T.T.; Milam, D.; Baker, P.; Murphy, G.

    1975-01-01

    Using a well characterized 1.06 μm 150 ps glass laser pulse the damage characteristics for diamond turned, diamond turned/ polished, and polished copper and silver mirrors less than 5 cm diameter were studied. Although most samples were tested with a normal angle of incidence, some were tested at 45 0 with different linear polarization showing an increase in damage threshold for S polarization. Different damage mechanisms observed will be discussed. Laser damage is related to residual surface influences of the fabrication process. First attempts to polish diamond turned surfaces resulted in a significant decrease in laser damage threshold. The importance of including the heat of fusion in the one dimensional heat analysis of the theoretical damage threshold and how close the samples came to the theoretical damage threshold is discussed. (auth)

  13. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  14. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    International Nuclear Information System (INIS)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-01-01

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

  15. The study of optimization on process parameters of high-accuracy computerized numerical control polishing

    Science.gov (United States)

    Huang, Wei-Ren; Huang, Shih-Pu; Tsai, Tsung-Yueh; Lin, Yi-Jyun; Yu, Zong-Ru; Kuo, Ching-Hsiang; Hsu, Wei-Yao; Young, Hong-Tsu

    2017-09-01

    Spherical lenses lead to forming spherical aberration and reduced optical performance. Consequently, in practice optical system shall apply a combination of spherical lenses for aberration correction. Thus, the volume of the optical system increased. In modern optical systems, aspherical lenses have been widely used because of their high optical performance with less optical components. However, aspherical surfaces cannot be fabricated by traditional full aperture polishing process due to their varying curvature. Sub-aperture computer numerical control (CNC) polishing is adopted for aspherical surface fabrication in recent years. By using CNC polishing process, mid-spatial frequency (MSF) error is normally accompanied during this process. And the MSF surface texture of optics decreases the optical performance for high precision optical system, especially for short-wavelength applications. Based on a bonnet polishing CNC machine, this study focuses on the relationship between MSF surface texture and CNC polishing parameters, which include feed rate, head speed, track spacing and path direction. The power spectral density (PSD) analysis is used to judge the MSF level caused by those polishing parameters. The test results show that controlling the removal depth of single polishing path, through the feed rate, and without same direction polishing path for higher total removal depth can efficiently reduce the MSF error. To verify the optical polishing parameters, we divided a correction polishing process to several polishing runs with different direction polishing paths. Compare to one shot polishing run, multi-direction path polishing plan could produce better surface quality on the optics.

  16. Electrolytic polishing system for space age materials

    International Nuclear Information System (INIS)

    Coons, W.C.; Iosty, L.R.

    1976-01-01

    A simple electrolytic polishing technique was developed for preparing Cr, Co, Hf, Mo, Ni, Re, Ti, V, Zr, and their alloys for structural analysis on the optical microscope. The base electrolyte contains 5g ZnCl 2 and 15g AlCl 3 . 6H 2 O in 200 ml methyl alcohol, plus an amount of H 2 SO 4 depending on the metal being polished. Five etchants are listed

  17. Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage.

    Science.gov (United States)

    Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

    2018-01-01

    This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond.

  18. Effects of different polishing techniques on the surface roughness of dental porcelains

    Directory of Open Access Journals (Sweden)

    Işil Sarikaya

    2010-02-01

    Full Text Available OBJECTIVE: The purpose of this study was to evaluate the effects of different polishing techniques on the surface roughness of dental porcelains. MATERIAL AND METHODS: Fifty-five cylindirical specimens (15x2 mm were prepared for each feldspathic (Vita VMK 95, Ceramco III and low-fusing dental porcelain (Matchmaker. Fifty-five specimens of machinable feldspathic porcelain blocks (Vitablocs Mark II, (12x14x18 mm were cut into 2-mm-thick slices (12x14 mm with low speed saw. The prepared specimens were divided into 11 groups (n=5 representing different polishing techniques including control ((C no surface treatment, glaze (G and other 9 groups that were finished and polished with polishing discs (Sof-Lex (Sl, two porcelain polishing kits (NTI (Pk, Dialite II (Di, a diamond polishing paste (Sparkle (Sp, a zirconium silicate based cleaning and polishing prophy paste (Zircate (Zr, an aluminum oxide polishing paste (Prisma Gloss (Pg, and combinations of them. The surface roughness of all groups was measured with a profilometer. The data were analyzed with a 2-way analysis of variance, and the mean values were compared by the Tukey Honestly Significant Difference test (a=0.05. RESULTS: For all porcelain material groups, the lowest Ra values were observed in Group Gl, Group Sl, Group Pk, and Group Di, which were not significantly different from each other (p>0.05.When comparing the 4 different porcelain materials, the machinable feldspathic porcelain block group (Mark II demonstrated statistically significantly less Ra values than the other porcelain materials tested (p<0.05. No significant difference was observed between the VMK 95 and Ceramco III porcelain groups (p=0.919, also these groups demonstrated the highest Ra values. CONCLUSION: Subjected to surface roughness, the surfaces obtained with polishing and/or cleaning-prophy paste materials used alone were rougher compared to the surfaces finished using Sof-lex, Dialite, and NTI polishing kit

  19. Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

    International Nuclear Information System (INIS)

    Wasserman, D.; Lyon, S.A.

    2004-01-01

    Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In x Ga (1-x) As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers

  20. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    OpenAIRE

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Ri...

  1. Marginal microleakage of resin-modified glass-ionomer and composite resin restorations: Effect of using etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Maryam Khoroushi

    2012-01-01

    Full Text Available Objectives: Previous studies have shown that dental adhesives increase the bond strength of resin-modified glass-ionomer (RMGI restorative materials to dentin. This in vitro study has evaluated the effect of etch-and-rinse and self-etch bonding systems v/s cavity conditioner, and in comparison to similar composite resin restorations on maintaining the marginal sealing of RMGI restorations. Materials and Methods: 98 rectangular cavities (2.5×3×1.5 mm were prepared on buccal and palatal aspects of 49 human maxillary premolars, randomly divided into 7 groups (N=14. The cavities in groups 1, 2 and 3 were restored using a composite resin (APX. The cavities in groups 4, 5, 6 and 7 were restored using a resin-modified glass-ionomer (Fuji II LC. Before restoring, adhesive systems (Optibond FL = OFL, three-step etch-and-rinse; One Step Plus = OSP, two-step etch-and-rinse; Clearfil Protect Bond = CPB, two-step self-etch were used as bonding agents in groups 1-6 as follow: OFL in groups 1 and 4, OSP in groups 2 and 5, and CPB in groups 3 and 6, respectively. The specimens in group 7 were restored with GC cavity conditioner and Fuji II LC. All the specimens were thermo-cycled for 1000 cycles. Microleakage scores were determined using dye penetration method. Statistical analyzes were carried out with Kruskal-Wallis and Mann-Whitney U tests (α=0.05. Results: There were significant differences in microleakage scores at both enamel and dentinal margins between the study groups (P<0.05. The lowest microleakage scores at enamel and dentin margins of RMGI restorations were observed in group 6. Conclusion: Use of two-step self-etch adhesive, prior to restoring cervical cavities with RMGIC, seems to be more efficacious than the conventional cavity conditioner in decreasing marginal microleakage.

  2. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

    Science.gov (United States)

    Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

    2017-10-24

    Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

  3. Symphony and cacophony in ion track etching: how to control etching results

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540 ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion track s * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  4. Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

    Energy Technology Data Exchange (ETDEWEB)

    Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi [Hitachi, Ltd., Central Research Laboratory, 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601 (Japan)

    2014-11-01

    The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.

  5. Polish Phoneme Statistics Obtained On Large Set Of Written Texts

    Directory of Open Access Journals (Sweden)

    Bartosz Ziółko

    2009-01-01

    Full Text Available The phonetical statistics were collected from several Polish corpora. The paper is a summaryof the data which are phoneme n-grams and some phenomena in the statistics. Triphonestatistics apply context-dependent speech units which have an important role in speech recognitionsystems and were never calculated for a large set of Polish written texts. The standardphonetic alphabet for Polish, SAMPA, and methods of providing phonetic transcriptions are described.

  6. Electrochemical etching of a niobium foil in methanolic HF for electrolytic capacitor

    International Nuclear Information System (INIS)

    Kim, Kyungmin; Park, Jiyoung; Cha, Gihoon; Yoo, Jeong Eun; Choi, Jinsub

    2013-01-01

    Electrochemical etching of niobium foil in order to enlarge the surface area for the application in electrolytic capacitor was carried out in a methanolic electrolyte. We found that the pit density and depth are not linearly proportional to concentration of HF and applied potential: there is the optimal concentration of HF at each applied potential. The optimal etching condition was obtained at 50 V in 0.99 vol.% HF, which exhibited the capacitance of 350 μF cm −2 . Pit density and depth of pits on electrochemical etched Nb foil under different conditions were counted from SEM images and electrochemical impedance spectroscopy (EIS) of the etched Nb foils was carried out for the capacitance measurement. Equivalent circuit model showing less than 5% error was suggested for applying to the etched niobium foil. - Highlights: • Surface enlargement of Nb foil can be achieved by electrochemical etching in methanolic HF. • Electrolytic capacitor of etched niobium foil exhibits a capacitance of 350 μF cm −2 . • The method provides a way of developing commercially viable process

  7. A novel non-sequential hydrogen-pulsed deep reactive ion etching of silicon

    International Nuclear Information System (INIS)

    Gharooni, M; Mohajerzadeh, A; Sandoughsaz, A; Khanof, S; Mohajerzadeh, S; Asl-Soleimani, E

    2013-01-01

    A non-sequential pulsed-mode deep reactive ion etching of silicon is reported that employs continuous etching and passivation based on SF 6 and H 2 gases. The passivation layer, as an important step for deep vertical etching of silicon, is feasible by hydrogen pulses in proper time-slots. By adjusting the etching parameters such as plasma power, H 2 and SF 6 flows and hydrogen pulse timing, the process can be controlled for minimum underetch and high etch-rate at the same time. High-aspect-ratio features can be realized with low-density plasma power and by controlling the reaction chemistry. The so-called reactive ion etching lag has been minimized by operating the reactor at higher pressures. X-ray photoelectron spectroscopy and scanning electron microscopy have been used to study the formation of the passivation layer and the passivation mechanism. (paper)

  8. Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

    Directory of Open Access Journals (Sweden)

    Yichuan Dai

    2017-06-01

    Full Text Available Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array.

  9. Polishing compound for plastic surfaces

    Science.gov (United States)

    Stowell, M.S.

    1991-01-01

    This invention is comprised of a polishing compound for plastic materials. The compound includes approximately by approximately by weight 25 to 80 parts at least one petroleum distillate lubricant, 1 to 12 parts mineral spirits, 50 to 155 parts abrasive paste, and 15 to 60 parts water. Preferably, the compound includes approximately 37 to 42 parts at least one petroleum distillate lubricant, up to 8 parts mineral spirits, 95 to 110 parts abrasive paste, and 50 to 55 parts water. The proportions of the ingredients are varied in accordance with the particular application. The compound is used on PLEXIGLAS{trademark}, LEXAN{trademark}, LUCITE{trademark}, polyvinyl chloride (PVC), and similar plastic materials whenever a smooth, clear polished surface is desired.

  10. Effects of hard mask etch on final topography of advanced phase shift masks

    Science.gov (United States)

    Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

    2017-07-01

    Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

  11. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  12. Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

    Science.gov (United States)

    Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

    2016-10-01

    The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

  13. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

    2017-01-01

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

  14. Pseudo-random tool paths for CNC sub-aperture polishing and other applications.

    Science.gov (United States)

    Dunn, Christina R; Walker, David D

    2008-11-10

    In this paper we first contrast classical and CNC polishing techniques in regard to the repetitiveness of the machine motions. We then present a pseudo-random tool path for use with CNC sub-aperture polishing techniques and report polishing results from equivalent random and raster tool-paths. The random tool-path used - the unicursal random tool-path - employs a random seed to generate a pattern which never crosses itself. Because of this property, this tool-path is directly compatible with dwell time maps for corrective polishing. The tool-path can be used to polish any continuous area of any boundary shape, including surfaces with interior perforations.

  15. Influence of Etching Mode on Enamel Bond Durability of Universal Adhesive Systems.

    Science.gov (United States)

    Suzuki, T; Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Endo, H; Erickson, R L; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to determine the enamel bond durability of three universal adhesives in different etching modes through fatigue testing. The three universal adhesives used were Scotchbond Universal, Prime&Bond Elect universal dental adhesive, and All-Bond Universal light-cured dental adhesive. A single-step self-etch adhesive, Clearfil S 3 Bond Plus was used as a control. The shear bond strength (SBS) and shear fatigue strength (SFS) to human enamel were evaluated in total-etch mode and self-etch mode. A stainless steel metal ring with an internal diameter of 2.4 mm was used to bond the resin composite to the flat-ground (4000-grit) tooth surfaces for determination of both SBS and SFS. For each enamel surface treatment, 15 specimens were prepared for SBS and 30 specimens for SFS. The staircase method for fatigue testing was then used to determine the SFS of the resin composite bonded to the enamel using 10-Hz frequencies for 50,000 cycles or until failure occurred. Scanning electron microscopy was used to observe representative debonded specimen surfaces and the resin-enamel interfaces. A two-way analysis of variance and the Tukey post hoc test were used for analysis of the SBS data, whereas a modified t-test with Bonferroni correction was used for the SFS data. All adhesives in total-etch mode showed significantly higher SBS and SFS values than those in self-etch mode. Although All-Bond Universal in self-etch mode showed a significantly lower SBS value than the other adhesives, there was no significant difference in SFS values among the adhesives in this mode. All adhesives showed higher SFS:SBS ratios in total-etch mode than in self-etch mode. With regard to the adhesive systems used in this study, universal adhesives showed higher enamel bond strengths in total-etch mode. Although the influence of different etching modes on the enamel-bonding performance of universal adhesives was found to be dependent on the adhesive material, total-etch mode

  16. Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips

    KAUST Repository

    Khan, Yasser; Al-Falih, Hisham; Ng, Tien Khee; Ooi, Boon S.; Zhang, Yaping

    2012-01-01

    Dynamic electrochemical etching technique is optimized to produce tungsten tips with controllable shape and radius of curvature of less than 10 nm. Nascent features such as dynamic electrochemical etching and reverse biasing after drop-off are utilized, and two-step dynamic electrochemical etching is introduced to produce extremely sharp tips with controllable aspect ratio. Electronic current shut-off time for conventional dc drop-off technique is reduced to ?36 ns using high speed analog electronics. Undesirable variability in tip shape, which is innate to static dc electrochemical etching, is mitigated with novel dynamic electrochemical etching. Overall, we present a facile and robust approach, whereby using a novel etchant level adjustment mechanism, 30° variability in cone angle and 1.5 mm controllability in cone length were achieved, while routinely producing ultra-sharp probes. © 2012 American Institute of Physics.

  17. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  18. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  19. Ion track etching revisited: I. Correlations between track parameters in aged polymers

    Science.gov (United States)

    Fink, D.; Muñoz H., G.; García A., H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

    2018-04-01

    Some yet poorly understood problems of etching of pristine and swift heavy ion track-irradiated aged polymers were treated, by applying conductometry across the irradiated foils during etching. The onset times of etchant penetration across pristine foils, and the onset times of the different etched track regimes in irradiated foils were determined for polymers of various proveniences, fluences and ages, as well as their corresponding etching speeds. From the results, correlations of the parameters with each other were deduced. The normalization of these parameters enables one to compare irradiated polymer foils of different origin and treatment with one another. In a number of cases, also polymeric gel formation and swelling occur which influence the track etching behaviour. The polymer degradation during aging influences the track etching parameters, which differ from each other on both sides of the foils. With increasing sample age, these differences increase.

  20. Shallow surface etching of organic and inorganic compounds by electrospray droplet impact

    International Nuclear Information System (INIS)

    Hiraoka, Kenzo; Sakai, Yuji; Iijima, Yoshitoki; Asakawa, Daiki; Mori, Kunihiko

    2009-01-01

    The electrospray droplet impact (EDI) was applied to bradykinin, polyethylene terephthalate (PET), SiO 2 /Si, and indium phosphide (InP). It was found that bradykinin deposited on the stainless steel substrate was ionized/desorbed without the accumulation of radiation products. The film thickness desorbed by a single collisional event was found to be less than 10 monolayers. In the EDI mass spectra for PET, several fragment ions were observed but the XPS spectra did not change with prolonged cluster irradiation. The etching rate for SiO 2 by EDI was measured to be ∼0.2 nm/min. The surface roughness of InP etched by EDI was found to be one order of magnitude smaller than that etched by 3 keV Ar + for about the same etching depths. EDI is capable of shallow surface etching with little damage left on the etched surface.

  1. Phonematic translation of Polish texts by the neural network

    International Nuclear Information System (INIS)

    Bielecki, A.; Podolak, I.T.; Wosiek, J.; Majkut, E.

    1996-01-01

    Using the back propagation algorithm, we have trained the feed forward neural network to pronounce Polish language, more precisely to translate Polish text into its phonematic counterpart. Depending on the input coding and network architecture, 88%-95% translation efficiency was achieved. (author)

  2. Effect of track etch rate on geometric track characteristics for polymeric track detectors

    International Nuclear Information System (INIS)

    Abdel-Naby, A.A.; El-Akkad, F.A.

    2001-01-01

    Analysis of the variable track etch rate on geometric track characteristic for polymeric track detectors has been applied to the case of LR-155 II SSNTD. Spectrometric characteristics of low energy alpha particles response by the polymeric detector have been obtained. The track etching kinematics theory of development of minor diameter of the etched tracks has been applied. The calculations show that, for this type of detector, the energy dependence of the minor track diameter d is linear for small-etched removal layer h. The energy resolution gets better for higher etched removal layer

  3. Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

    Science.gov (United States)

    Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

    2018-04-27

    Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

  4. ADAM 12-S cleaves IGFBP-3 and IGFBP-5 and is inhibited by TIMP-3

    DEFF Research Database (Denmark)

    Loechel, F; Fox, J W; Murphy, G

    2000-01-01

    that it cleaves insulin-like growth factor binding protein-3 (IGFBP-3). This result supports a role for ADAM 12-S in the degradation of IGFBP-3 in the blood of pregnant women. Furthermore, we tested for proteolysis of other members of the IGF binding protein family and found that ADAM 12-S cleaves IGFBP-5......ADAMs are a family of multidomain proteins having proteolytic and cell adhesion activities. We have previously shown that ADAM 12-S, the secreted soluble form of human ADAM 12, is a catalytically active protease. We now describe the purification of full-length recombinant ADAM 12-S and demonstrate...

  5. Real-Time Observation of Carbon Nanotube Etching Process Using Polarized Optical Microscope.

    Science.gov (United States)

    Zhao, Qiuchen; Yao, Fengrui; Wang, Zequn; Deng, Shibin; Tong, Lianming; Liu, Kaihui; Zhang, Jin

    2017-08-01

    Controllable synthesis of carbon nanotubes (CNTs) is of great importance in its further application, which attracts broad attention. As growth and etching are the two sides in the process of material crystallography and the control of the competition between them forms the foundation for modern technology of materials design and manufacture, the understanding on etching process of carbon nanotubes is still very unclear because technically it is of great challenge to characterize the dynamics in such small one-dimensional (1D) scale. Here the real-time investigation on the etching process of CNTs is reported, by the hot-wall chemical reactor equipped with a polarized optical microscope. It is discovered that the CNT etching behavior in air is totally of random, including the etching sites, termination sites, and structure dependence. Combining with the dynamic simulation, it is revealed that the random behavior reflects the unique "self-termination" phenomenon. A structure-independent etching propagation barrier of 2.4 eV is also obtained, which indicates that the etching propagation process still follows the conventional Kinetic Wulff construction theory. The results represent the new knowledge on the etching process in carbon nanotube and can contribute to its selective enrichment. Furthermore, the "self-termination" phenomenon may be a universal behavior in 1D process. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Etching characteristics of nuclear tracks in CR-39 plastics

    International Nuclear Information System (INIS)

    Tsuruta, Takao; Isobe, Ginko.

    1984-01-01

    In using CR-39 plastics for individual neutron dosimeters, changes of etching efficiency cause significant error in dose estimation. Etching efficiency is subject to a number of parameters. In this study the influences of the parameters were examined by measuring the diameters of etch-pits formed by alpha-particles and enlarged by aqueous solutions of 25-35% KOH at 55-65 0 C for 4 hr. It has been observed that diameter changes at the rate of 8.3%/ 0 C in temperature, 8.2%/wt% in concentration and -0.60%/day in time after preparation of etchant. The diameter is unaffected by the supplying of up to 280ml/l, of distilled water for evaporation of etchant or by increase up to 5g/l of CR-39 dissolved in etchant. The magnitude of possible error has been estimated by parameter as well as in general, so as to obtain suggestions for improving etching treatment. (author)

  7. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  8. In situ ion etching in a scanning electron microscope

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Fitch, R.K.

    1977-01-01

    A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

  9. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  10. An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

    International Nuclear Information System (INIS)

    Babar, S.; Sellin, P.J.; Watts, J.F.; Baker, M.A.

    2013-01-01

    Highlights: ► CdZnTe single crystal etched in bromine-in-methanol and passivated in H 2 O 2 . ► XPS depth used to accurately determine enriched Te layer and TeO 2 thickness. ► For 0.2 and 2.0 (v/v) % bromine-in-methanol treatments, enriched Te layer thickness determined to be 1.3 and 1.8 nm, respectively. ► After passivation in 30 wt.% H 2 O 2 , the oxide thickness varies between 1.0 and 1.25 nm depending on the calculation method. - Abstract: The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the surface properties of the material. After single crystal fabrication and mechanical polishing, modification of the surface to remove damage and reduce the surface leakage current is generally achieved through chemical etching followed by a passivation treatment. In this work, CdZnTe single crystals have been chemically etched using a bromine in methanol (BM) treatment. The BM concentrations employed were 0.2 and 2.0 (v/v) % and exposure times varied between 5 and 120 s. Angle resolved XPS and sputter depth profiling has been employed to characterize the surfaces for the different exposure conditions. A Te rich surface layer was formed for all exposures and the layer thickness was found to be independent of exposure time. The enriched Te layer thickness was accurately determined by calibrating the sputter rate against a CdTe layer of known thickness. For BM concentrations of 0.2 (v/v) % and 2 (v/v) %, the Te layer thickness was determined to be 1.3 ± 0.2 and 1.8 ± 0.2 nm, respectively. The BM etched surfaces have subsequently been passivated in a 30 wt.% H 2 O 2 solution employing exposure time of 15 s. The oxide layer thickness has been calculated using two standard XPS methodologies, based on the Beer–Lambert expression. The TeO 2 thickness calculated from ARXPS data are slightly higher than the thickness obtained by the simplified Beer–Lambert expression. For BM exposures of 30–120 s followed by a passivation

  11. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  12. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  13. Tribological approach to study polishing of road surface under traffic

    OpenAIRE

    KANE, Malal; DO, Minh Tan

    2007-01-01

    The polishing phenomenon of road pavements under the vehicle traffic constitutes the main mechanism inherent to the loss of skid resistance over time. A better understanding of this phenomenon would allow an improvement of road safety. This study comprises a review of laboratory test and a model simulating the polishing of road surfaces. The laboratory test uses a polishing machine so called 'Wehner-Schulze' which can reproduce the evolution of the road texture from specimens taken directly f...

  14. Electron cyclotron resonance ion stream etching of tantalum for x-ray mask absorber

    International Nuclear Information System (INIS)

    Oda, Masatoshi; Ozawa, Akira; Yoshihara, Hideo

    1993-01-01

    Electron cyclotron resonance ion stream etching of Ta film was investigated for preparing x-ray mask absorber patterns. Ta is etched by the system at a high rate and with high selectivity. Using Cl 2 as etching gas, the etch rate decreases rapidly with decreasing pattern width below 0.5 μm and large undercutting is observed. The problems are reduced by adding Ar or O 2 gas to the Cl 2 . Etching with a mixture of Cl 2 and O 2 produces highly accurate Ta absorber patterns for x-ray masks. The pattern width dependence of the etch rate and the undercutting were simulated with a model that takes account of the angular distribution of active species incident on the sample. The experimental results agree well with those calculated assuming that the incidence angles are distributed between -36 degrees and 36 degrees. The addition of O 2 or Ar enhances ion assisted etching. 16 refs., 16 figs

  15. Etching properties of BLT films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

    2003-01-01

    CF 4 /Ar plasma mass content and etching rate behavior of BLT thin films were investigated in inductively coupled plasma (ICP) reactor as functions of CF 4 /Ar gas mixing ratio, rf power, and dc bias voltage. The variation of relative volume densities for F and Ar atoms were measured by the optical emission spectroscopy (OES). The etching rate as functions of Ar content showed the maximum of 803 A/min at 80 % Ar addition into CF 4 plasma. The presence of maximum etch rate may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The role of Ar ion bombardment includes destruction of metal (Bi, La, Ti)-O bonds as well as support of chemical reaction of metals with fluorine atoms

  16. The place of polish in the multilingual space of the European Union

    Directory of Open Access Journals (Sweden)

    T. I. Neprytska

    2015-03-01

    Full Text Available The article studies the position of the Polish language in the multilingual space of the European Union and determines the key factors which facilitate its gaining popularity and spreading in Europe. A large territory and population determine the significant presence of Polish in the European Union. Intense economic development facilitates popularization of learning and using Polish in the business medium, however, English was and still remains the dominating language of business. Active work of the state on improving the reputation of the country abroad, civilizational (value­based unity with other nations of the EU, favorable geographical position, common Indo­European roots of Germanic, Romanic and Slavonic  languages as well as usage of the Latin type create favorable conditions for the development and popularization of Polish on the territory of the EU. The article also mentions a number of concerns, which are rooted in the historical past of a dependent or semi­dependent existence of the Polish people, namely, the existence of the Polish and culture in the shade of German and Russian culture space, the negative international image of modern Poland, which was formed at the beginning of the 1990­s, the low level of Europeans’ familiarization with the Polish culture, absence of popularity and economic necessity of learning Polish abroad.

  17. Model calculations for electrochemically etched neutron detectors

    International Nuclear Information System (INIS)

    Pitt, E.; Scharmann, A.; Werner, B.

    1988-01-01

    Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

  18. Microdroplet-etched highly birefringent low-loss fiber tapers.

    Science.gov (United States)

    Mikkelsen, Jared C; Poon, Joyce K S

    2012-07-01

    We use hydrofluoric acid microdroplets to directly etch highly birefringent biconical fiber tapers from standard single-mode fibers. The fiber tapers have micrometer-sized cross sections, which are controlled by the etching condition. The characteristic teardrop cross section leads to a high group birefringence of B(G)≈0.017 and insertion losses <0.7 dB over waist lengths of about 2.1 mm.

  19. High rate dry etching of InGaZnO by BCl3/O2 plasma

    Science.gov (United States)

    Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

    2011-08-01

    This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

  20. Polymer degradation in reactive ion etching and its possible application to all dry processes

    International Nuclear Information System (INIS)

    Hiraoka, H.; Welsh, L.W. Jr.

    1981-01-01

    Dry etching processes involving CF 4 -plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF 3 + ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF 3 + ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF 4 -plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

  1. Metallographic preparation of Zr-2.5Nb pressure tube material for examination of inclusions

    International Nuclear Information System (INIS)

    Lockley, A.J.

    1994-11-01

    The traditional final polish of Zr-2.5Nb alloy comprises an attack polish that contains a 0.05 μm alumina or fly-ash slurry with dilute hydrofluoric acid. This polish preferentially etches the material adjacent to the inclusions and distorts or removes the inclusions. A final polish has been developed that uses a caustic alumina slurry to produce a chemical-mechanical polish that keeps the inclusions intact. This preparation is reproducible, suitable for automation, and retains smaller inclusions. (author). 2 refs., 5 figs

  2. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  3. The corrosion resistance of Nitinol alloy in simulated physiological solutions

    International Nuclear Information System (INIS)

    Milošev, Ingrid; Kapun, Barbara

    2012-01-01

    The corrosion behaviour of Nitinol alloy containing nearly equi-atomic composition of nickel and titanium and its constituent metals (nickel and titanium) was investigated in simulated Hanks physiological solution (pH value 7.5) and pH modified simulated Hanks physiological solution (pH values 4.5 and 6.5) and by electrochemical method of anodic potentiodynamic polarization at 37 °C. In this chloride-rich medium the corrosion stability of Nitinol is limited by the susceptibility to localized corrosion and is in that sense more similar to nickel than to titanium. The corrosion stability of Nitinol is strongly dependent on the surface preparation—grinding, polishing or chemical etching. Whereas a ground surface is not resistant to localized corrosion, polished and chemically etched surfaces are resistant to this type of corrosion attack. The reasons for this behaviour were investigated through metallurgical, topographical and chemical properties of the surface as a function of surface preparation. For that purpose, scanning electron microscopy combined with chemical analysis, confocal microscopy and X-ray photoelectron spectroscopy were used. The surface roughness decreased in the following order: chemically etched > ground > polished surface. Besides differences in topography, distinct differences in the chemical composition of the outermost surface are observed. Ground, rough surfaces comprised mainly titanium oxides and small amounts of nickel metal. Chemically etched and, especially, polished surfaces are composed of a mixture of titanium, nickel and titanium oxides, as studied by angle resolved X-ray photoelectron spectroscopy. These results emphasize the importance of detailed investigation of the metal surface since small differences in surface preparation may induce large differences in corrosion stability of material when exposed to corrosive environments. - Highlights: ► The corrosion resistance of Nitinol is dependent on the surface preparation.

  4. Research on high-efficiency polishing technology of photomask substrate

    Science.gov (United States)

    Zhao, Shijie; Xie, Ruiqing; Zhou, Lian; Liao, Defeng; Chen, Xianhua; Wang, Jian

    2018-03-01

    A method of photomask substrate fabrication is demonstrated ,that the surface figure and roughness of fused silica will converge to target precision rapidly with the full aperture polishing. Surface figure of optical flats in full aperture polishing processes is primarily dependent on the surface profile of polishing pad, therefor, a improved function of polishing mechanism was put forward based on two axis lapping machine and technology experience, and the pad testing based on displacement sensor and the active conditioning method of the pad is applied in this research. Moreover , the clamping deformation of the thin glass is solved by the new pitch dispensing method. The experimental results show that the surface figure of the 152mm×152mm×6.35mm optical glass is 0.25λ(λ=633nm) and the roughness is 0.32nm ,which has meet the requirements of mask substrate for 90 45nm nodes.

  5. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    Science.gov (United States)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  6. Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

    Science.gov (United States)

    Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

    2012-05-01

    A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

  7. A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

    Science.gov (United States)

    Yang, Eui-Hyeok; Wild, Larry

    2003-01-01

    Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

  8. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  9. Forming a health culture of future teachers in Polish educational establishments

    Directory of Open Access Journals (Sweden)

    T.S. IERMAKOVA

    2014-10-01

    Full Text Available Aim: to study the experience of the structure and system of training of future teachers in Polish schools. Material: content analysis of domestic and foreign authors. Used data from the survey of students of Polish universities. Also were used survey results through polish service ANKIETKA. For comparison, a questionnaire survey 35 students of the Faculty of Physical Education (future teachers of physical training and 30 students - the future teachers of elementary school of Ukrainian university. Results: the study of Polish teachers consider health culture of a person as the ability to assess individual and community health needs using in everyday life hygiene and health regulations. There have been some differences among Ukrainian and Polish students in their health and health culture. Among the respondents, Polish students - the future teachers of physical culture, is dominated motives such as the improvement of the physical condition, strengthen self-esteem, as well as improved health. Polish students from other disciplines believe that the most important motive for the adoption of physical activity is a concern for the physical well-being and mental health. The majority of Ukrainian students (future teachers of physical culture believe an important part of building health culture of their direct participation in various sports clubs, as well as the ability to organize physical culture, sports and educational work with students outside the classroom. Ukrainian students (other specialty noted the need to improve health, enhance knowledge in specific subjects humanities and promoting healthy lifestyles. Conclusions: It is recommended to use the experience of preparing students of Polish schools in modern Ukrainian higher education.

  10. Confocal Raman spectrocopy for the analysis of nail polish evidence.

    Science.gov (United States)

    López-López, Maria; Vaz, Joana; García-Ruiz, Carmen

    2015-06-01

    Nail polishes are cosmetic paints that may be susceptible of forensic analysis offering useful information to assist in a crime reconstruction. Although the nail polish appearance could allow a quick visual identification of the sample, this analysis is subjected to the perception and subjective interpretation of the forensic examiner. The chemical analysis of the nail polishes offers great deal of information not subjected to analyst interpretation. Confocal Raman spectroscopy is a well-suited technique for the analysis of paints due to its non-invasive and non-destructive nature and its ability to supply information about the organic and inorganic components of the sample. In this work, 77 regular and gel nail polishes were analyzed with confocal Raman spectroscopy using two laser wavelengths (532 and 780 nm). The sample behavior under the two laser wavelengths and the differences in the spectra taken at different points of the sample were studied for each nail polish. Additionally, the spectra obtained for all the nail polishes were visually compared. The results concluded that the longer laser wavelength prevents sample burning and fluorescence effects; the similarity among the spectra collected within the sample is not directly related with the presence of glitter particles; and 64% of the samples analyzed showed a characteristic spectrum. Additionally, the use of confocal Raman spectroscopy for the forensic analysis of nail polishes evidence in the form of flakes or smudges on different surfaces were studied. The results showed that both types of evidence can be analyzed by the technique. Also, two non-invasive sampling methods for the collection of the evidence from the nails of the suspect or the victim were proposed: (i) to use acetone-soaked cotton swabs to remove the nail varnishes and (ii) to scrape the nail polish from the nail with a blade. Both approaches, each exhibiting advantages and drawbacks in terms of transport and handling were appropriate

  11. Influence of redeposition on the plasma etching dynamics

    International Nuclear Information System (INIS)

    Stafford, L.; Margot, J.; Delprat, S.; Chaker, M.; Pearton, S. J.

    2007-01-01

    This work reports on measurements of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma. While PR exhibits a redeposition-free behavior, the degree of redeposition of Pt, BST, and SBT species increases from 10% to 95% as the argon pressure increases from 0.5 to 10 mTorr. These results are in good agreement with the predictions of a simple model accounting for the backscattering of sputtered species following their interaction with the gas phase. Based on these results and using other experimental data reported in the literature, it is further demonstrated that, depending on the plasma etching conditions, redeposition effects can induce misinterpretation of the etch rate data

  12. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

    International Nuclear Information System (INIS)

    Baik, K.H.; Pearton, S.J.

    2009-01-01

    The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

  13. Novel ceria-polymer microcomposites for chemical mechanical polishing

    International Nuclear Information System (INIS)

    Coutinho, Cecil A.; Mudhivarthi, Subrahmanya R.; Kumar, Ashok; Gupta, Vinay K.

    2008-01-01

    Abrasive particles are key components in slurries for chemical mechanical polishing (CMP). Since the particle characteristics determine surface quality of wafers during polishing, in this research, novel abrasive composite particles have been developed. These composite particles contain nanoparticles of ceria dispersed within cross-linked, polymeric microspheres such that the average mass fraction of ceria is approximately 50% in the particles. The microspheres are formed by co-polymerization of N-isopropylacrylamide (NIPAM) with 3-(trimethoxysilyl)propyl methacrylate (MPS) and contain interpenetrating (IP) chains of poly(acrylic acid) (PAAc). Infrared spectroscopy, dynamic light scattering, and transmission electron microscopy are employed to characterize the composite particles. Planarization of silicon dioxide wafers is studied on a bench-top CMP tester and the polished surfaces are characterized by ellipsometry, atomic force and optical microscopy. Slurries formed from the composite ceria-polymer particles lead to lower topographical variations and surface roughness than slurries of only ceria nanoparticles even though both slurries achieve similar removal rates of ∼100 nm/min for similar ceria content. Polishing with the novel composite particles gives surfaces devoid of scratches and particle deposition, which makes these particles suitable for the next generation slurries in CMP

  14. Novel ceria-polymer microcomposites for chemical mechanical polishing

    Energy Technology Data Exchange (ETDEWEB)

    Coutinho, Cecil A. [Department of Chemical and Biomedical Engineering, University of South Florida (United States); Mudhivarthi, Subrahmanya R.; Kumar, Ashok [Nanomaterials and Nanomanufacturing Research Center, University of South Florida (United States); Department of Mechanical Engineering, University of South Florida (United States); Gupta, Vinay K. [Department of Chemical and Biomedical Engineering, University of South Florida (United States)], E-mail: vkgupta@eng.usf.edu

    2008-12-30

    Abrasive particles are key components in slurries for chemical mechanical polishing (CMP). Since the particle characteristics determine surface quality of wafers during polishing, in this research, novel abrasive composite particles have been developed. These composite particles contain nanoparticles of ceria dispersed within cross-linked, polymeric microspheres such that the average mass fraction of ceria is approximately 50% in the particles. The microspheres are formed by co-polymerization of N-isopropylacrylamide (NIPAM) with 3-(trimethoxysilyl)propyl methacrylate (MPS) and contain interpenetrating (IP) chains of poly(acrylic acid) (PAAc). Infrared spectroscopy, dynamic light scattering, and transmission electron microscopy are employed to characterize the composite particles. Planarization of silicon dioxide wafers is studied on a bench-top CMP tester and the polished surfaces are characterized by ellipsometry, atomic force and optical microscopy. Slurries formed from the composite ceria-polymer particles lead to lower topographical variations and surface roughness than slurries of only ceria nanoparticles even though both slurries achieve similar removal rates of {approx}100 nm/min for similar ceria content. Polishing with the novel composite particles gives surfaces devoid of scratches and particle deposition, which makes these particles suitable for the next generation slurries in CMP.

  15. Jewish problem in the Polish Communist Party

    Directory of Open Access Journals (Sweden)

    Cimek Henryk

    2016-12-01

    Full Text Available Jews accounted for approx. 8-10% of the population of the Second Republic and in the communist movement (Polish Communist Party and Polish Communist Youth Union the rate was approx, 30%, while in subsequent years it much fluctuated. The percentage of Jews was the highest in the authorities of the party and in the KZMP. This had a negative impact on the position of the KPP on many issues, especially in its relation to the Second Republic.

  16. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  17. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  18. DURIP 99 - Instrumentation for Deposition and Etching of Ferromagnetic Nanoparticles

    National Research Council Canada - National Science Library

    Kummel, Andrew

    2000-01-01

    .... Since silver is much more difficult to etch than iron due to the lack of volatile silver halides, this spontaneous coating of Fe by Ag explains the difficulty in etching Fe particles deposited on Ag substrates. (b...

  19. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  20. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  1. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  2. Borel hierarchies in infinite products of Polish spaces

    Indian Academy of Sciences (India)

    with two product topologies: (i) the product of copies of the Polish topology on X, so that H is again a Polish space and (ii) the product of copies of the discrete topology on X. Define now the Borel hierarchy in the larger topology on H. To do so, we need some notation. An element of H will be denoted by h = (x1,x2,...,xn,.

  3. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    International Nuclear Information System (INIS)

    Riedel, Nicholas A.; Smith, Barbara S.; Williams, John D.; Popat, Ketul C.

    2012-01-01

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO 2 peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: ►Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. ►Oxygen etched substrates showed fewer adhered platelets. ►Platelet activation was reduced by the improved oxide surface. ►Oxygen etched substrates exhibited increased whole blood clotting times. ►Although clotting reductions were seen, protein adsorption remained similar.

  4. Localized etching of polymer films using an atmospheric pressure air microplasma jet

    International Nuclear Information System (INIS)

    Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

    2015-01-01

    A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min −1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ. (paper)

  5. Enamel and dentin bond strengths of a new self-etch adhesive system.

    Science.gov (United States)

    Walter, Ricardo; Swift, Edward J; Boushell, Lee W; Braswell, Krista

    2011-12-01

    statement of problem:  Self-etch adhesives typically are mildly acidic and therefore less effective than etch-and-rinse adhesives for bonding to enamel.   The purpose of this study was to evaluate the enamel and dentin shear bond strengths of a new two-step self-etch adhesive system, OptiBond XTR (Kerr Corporation, Orange, CA, USA).   The labial surfaces of 80 bovine teeth were ground to create flat, 600-grit enamel or dentin surfaces. Composite was bonded to enamel or dentin using the new two-step self-etch system or a three-step etch-and-rinse (OptiBond FL, Kerr), two-step self-etch (Clearfil SE Bond, Kuraray America, Houston, TX, USA), or one-step self-etch adhesive (Xeno IV, Dentsply Caulk, Milford, DE, USA). Following storage in water for 24 hours, shear bond strengths were determined using a universal testing machine. The enamel and dentin data sets were subjected to separate analysis of variance and Tukey's tests. Scanning electron microscopy was used to evaluate the effects of each system on enamel.   Mean shear bond strengths to enamel ranged from 18.1 MPa for Xeno IV to 41.0 MPa for OptiBond FL. On dentin, the means ranged from 33.3 MPa for OptiBond FL to 47.1 MPa for Clearfil SE Bond. OptiBond XTR performed as well as Clearfil SE Bond on dentin and as well as OptiBond FL on enamel. Field emission scanning electron microscope revealed that OptiBond XTR produced an enamel etch pattern that was less defined than that of OptiBond FL (37.5% phosphoric acid) but more defined than that of Clearfil SE Bond or Xeno IV.   The new two-step self-etch adhesive system formed excellent bonds to enamel and dentin in vitro. OptiBond XTR, a new two-step self-etch adhesive system, is a promising material for bonding to enamel as well as to dentin. © 2011 Wiley Periodicals, Inc.

  6. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  7. Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

    Science.gov (United States)

    Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

    2012-02-01

    In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

  8. A study of laser surface treatment in bonded repair of composite aircraft structures.

    Science.gov (United States)

    Li, Shaolong; Sun, Ting; Liu, Chang; Yang, Wenfeng; Tang, Qingru

    2018-03-01

    Surface pre-treatment is one of the key processes in bonded repair of aircraft carbon fibre reinforced polymer composites. This paper investigates the surface modification of physical and chemical properties by laser ablation and conventional polish treatment techniques. Surface morphology analysed by laser scanning confocal microscopy and scanning electron microscopy showed that a laser-treated surface displayed higher roughness than that of a polish-treated specimen. The laser-treated laminate exhibited more functional groups in the form of O 1 s/C 1 s atomic ratio of 30.89% for laser-treated and 20.14% for polish-treated as evidenced by X-ray photoelectron spectroscopy observation. Contact angle goniometry demonstrated that laser treatment can provide increased surface free energy and wettability. In the light of mechanical interlocking, molecular bonding and thermodynamics theories on adhesion, laser etching process displayed enhanced bonding performance relative to the polishing surface treatment. These properties resulted in an increased single lap shear strength and a cohesive failure mode for laser etching while an adhesive failure mode occurred in polish-treated specimen.

  9. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  10. Effect of One-Step and Multi-Steps Polishing System on Enamel Roughness

    Directory of Open Access Journals (Sweden)

    Cynthia Sumali

    2013-07-01

    Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 The final procedures of orthodontic treatment are bracket debonding and cleaning the remaining adhesive. Multi-step polishing system is the most common method used. The disadvantage of that system is long working time, because of the stages that should be done. Therefore, dental material manufacturer make an improvement to the system, to reduce several stages into one stage only. This new system is known as one-step polishing system. Objective: To compare the effect of one-step and multi-step polishing system on enamel roughness after orthodontic bracket debonding. Methods: Randomized control trial was conducted included twenty-eight maxillary premolar randomized into two polishing system; one-step OptraPol (Ivoclar, Vivadent and multi-step AstroPol (Ivoclar, Vivadent. After bracket debonding, the remaining adhesive on each group was cleaned by subjective polishing system for ninety seconds using low speed handpiece. The enamel roughness was subjected to profilometer, registering two roughness parameters (Ra, Rz. Independent t-test was used to analyze the mean score of enamel roughness in each group. Results: There was no significant difference of enamel roughness between one-step and multi-step polishing system (p>0.005. Conclusion: One-step polishing system can produce a similar enamel roughness to multi-step polishing system after bracket debonding and adhesive cleaning.DOI: 10.14693/jdi.v19i3.136

  11. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    International Nuclear Information System (INIS)

    Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

  12. The View of Lithuanian Statehood Held by the Polish Underground during 1939-1944

    OpenAIRE

    Bubnys, Arūnas

    2006-01-01

    The article investigates the attitudes of Polish underground actors towards the statehood of Lithuania, its territorial integrity, and Lithuanian-Polish relations during the World War II. The author draws the conclusion that Polish underground political structures expressed a hostile and prejudiced attitude towards Lithuania. All the blame and responsibility for bad mutual relations is put on Lithuania and Lithuanians. Polish underground actors living in Vilnija were extremely hostile towards...

  13. Does active application of universal adhesives to enamel in self-etch mode improve their performance?

    Science.gov (United States)

    Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

    2015-09-01

    To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (padhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

  14. Experimental Study on Layered Ice Bonded Abrasive Polishing of Glass-ceramics

    Directory of Open Access Journals (Sweden)

    Yuli SUN

    2014-12-01

    Full Text Available Layered ice bonded abrasive tools (LIBAT is a new kind of one which not only has the ability of lapping and polishing but also has the effect of self-dressing. In this paper, two kinds of layered ice bonded abrasive tools were designed and manufactured. Experimental studies on layered ice bonded abrasive (LIBA polishing of glass-ceramics were conducted. The results show that the surface topography of glass-ceramics polished by micro α-Al2O3-nano α-Al2O3 LIBAT is better than that of polished by micro α-Al2O3-nano SiO2 LIBAT. The surface roughness Sa of glass-ceramics polished by the two kinds of LIBAT is at the nanometer scale. The reasons of this phenomenon were analyzed. The experimental results illustrate that the LIBAT shows good effect and can be used in production practice. DOI: http://dx.doi.org/10.5755/j01.ms.20.4.6149

  15. Energy savings in Polish buildings

    Energy Technology Data Exchange (ETDEWEB)

    Markel, L.C.; Gula, A.; Reeves, G.

    1995-12-31

    A demonstration of low-cost insulation and weatherization techniques was a part of phase 1 of the Krakow Clean Fossil Fuels and Energy Efficient Project. The objectives were to identify a cost-effective set of measures to reduce energy used for space heating, determine how much energy could be saved, and foster widespread implementation of those measures. The demonstration project focused on 4 11-story buildings in a Krakow housing cooperative. Energy savings of over 20% were obtained. Most important, the procedures and materials implemented in the demonstration project have been adapted to Polish conditions and applied to other housing cooperatives, schools, and hospitals. Additional projects are being planned, in Krakow and other cities, under the direction of FEWE-Krakow, the Polish Energie Cities Network, and Biuro Rozwoju Krakowa.

  16. Effects of polymer corrosion inhibitor on widening etch tunnels of aluminum foil for capacitor

    International Nuclear Information System (INIS)

    Ban, Chaolei; He, Yedong; Shao, Xin; Wang, Zhishen

    2014-01-01

    Highlights: •With PSSA, the exterior surface dissolution of etched Al foil is suppressed. •With PSSA, the interior surface dissolution of etched Al foil is facilitated. •With PSSA, the tunnels are widened along the entire length. •With PSSA, the area and capacitance of etched Al foil are significantly improved. -- Abstract: We investigated the effects of polymeric corrosion inhibitor polystyrene sulfonic acid (PSSA) additive to 3% HNO 3 solution on widening tunnels of pre-etched aluminum foil by electrochemical DC etching for aluminum electrolytic capacitors, using scanning electron microscopy and polarization curves. With trace PSSA, the dissolution of exterior surface of etch tunnels of Al foil is suppressed and the dissolution of interior surface of etch tunnels of Al foil is facilitated, respectively. The tunnels transform from circular cone to circular column in shape and pits-merging on the surface is weakened, leading to significant increase in the surface area and specific capacitance of the Al foil. The amounts of reduced thickness and weight of Al foil during the widening process of etch tunnels can be decreased if PSSA is employed

  17. Consideration of correlativity between litho and etching shape

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2012-03-01

    We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

  18. Nd:YOV4 laser polishing on WC-Co HVOF coating

    Science.gov (United States)

    Giorleo, L.; Ceretti, E.; Montesano, L.; La Vecchia, G. M.

    2017-10-01

    WC/Co coatings are widely applied to different types of components due to their extraordinary performance properties including high hardness and wear properties. In industrial applications High Velocity Oxy-Fuel (HVOF) technique is extensively used to deposit hard metal coatings. The main advantage of HVOF compared to other thermal spray techniques is the ability to accelerate the melted powder particles of the feedstock material at a relatively high velocity, leading to obtain good adhesion and low porosity level. However, despite the mentioned benefits, the surface finish quality of WC-Co HVOF coatings results to be poor (Ra higher than 5 µm) thus a mechanical polishing process is often needed. The main problem is that the high hardness of coating leads the polishing process expensive in terms of time and tool wear; moreover polishing becomes difficult and not always possible in case of limited accessibility of a part, micro dimensions or undercuts. Nowadays a different technique available to improve surface roughness is the laser polishing process. The polishing principle is based on focused radiation of a laser beam that melts a microscopic layer of surface material. Compared to conventional polishing process (as grinding) it ensures the possibility of avoiding tool wear, less pollution (no abrasive or liquids), no debris, less machining time and coupled with a galvo system it results to be more suitable in case of 3D complex workpieces. In this paper laser polishing process executed with a Nd:YOV4 Laser was investigated: the effect of different process parameters as initial coating morphology, laser scan speed and loop cycles were tested. Results were compared by a statistical approach in terms of average roughness along with a morphological analysis carried out by Scanning Electron Microscope (SEM) investigation coupled with EDS spectra.

  19. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  20. Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation method

    International Nuclear Information System (INIS)

    Nakano, Shizuka; Nakagawa, Sachiko; Ishikawa, Haruo; Ogiso, Hisato

    2001-01-01

    An advanced micromachining technique using ion implantation to modify materials was studied. Gold ion implantation into silicon decreased the etching rate when the silicon was etched in potassium hydroxide solution after the ion implantation; the implanted region remained, thus forming the microstructure. Observation of the cross-section of the resulting etched structure by transmission electron microscopy showed that the structure was made only from the ion-implanted region, and that gold was precipitated on the surface. To clarify the mechanism involved in the decrease in the etching rate, we varied the etching conditions. Our results show that precipitation of implanted gold on the surface decreased the etching rate, because solubility of gold is lower

  1. Interaction and dynamics of ambient water adlayers on graphite probed using AFM voltage nanolithography and electrostatic force microscopy

    International Nuclear Information System (INIS)

    Gowthami, T; Raina, Gargi; Kurra, Narendra

    2014-01-01

    In this work, we report the impact of the interaction and dynamics of increasing ambient water adlayers on etch patterns on a hydrophobic highly oriented pyrolytic graphite (HOPG) surface obtained using atomic force microscopy (AFM) voltage nanolithography in contact mode by applying a positive bias to the sample. The changes in the dimensions of the etch patterns were investigated as a function of the increasing number of water adlayers present on the HOPG, which is varied by changing the time interval since HOPG cleavage. Changes in the width of the etch patterns and the surrounding water droplets were monitored with time, using intermittent-contact-mode AFM. Electrostatic force microscopy (EFM) has been employed to study the charged nature of the etch patterns and the neighboring water film with time. The width of the etch patterns made on freshly cleaved HOPG shows an increase of ∼33% over 48 h, whereas nine-day-old cleaved HOPG shows a 79% increase over the same period. No changes in the dimensions are observed while imaging in a nitrogen atmosphere soon after lithography. In ambient conditions, the EFM phase shift of the patterns shows a large change of ∼84–88% over 30 h. This study demonstrates the effect of the stored electrostatic energy of a polarized ice-like water adlayer, resulting in changes in the dimensions of the etch patterns long after lithography, whereas liquid-like water droplets do not affect the etch patterns. (paper)

  2. Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties

    International Nuclear Information System (INIS)

    Nguyen, Q D; Elwenspoek, M

    2006-01-01

    Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silicon was characterised in terms of microscopic properties including step velocity, step and terrace roughening. The anisotropic etch rate data needed have been obtained using a combination of 2 wagon wheel patterns on different substrate and 1 offset trench pattern. Using this procedure the influence of an applied potential has been investigated in terms of microscopic properties. Model parameter trends show a good correlation with chemical/electrochemical reaction mechanism and mono- and dihydride terminated steps reactivity difference. Results also indicate a minimum in (111) terrace roughening which results in a peak in anisotropic ratio at the non-OCP applied potential of -1250 mV vs OCP

  3. Experimental Study on Abrasive Waterjet Polishing of Hydraulic Turbine Blades

    International Nuclear Information System (INIS)

    Khakpour, H; Birglenl, L; Tahan, A; Paquet, F

    2014-01-01

    In this paper, an experimental investigation is implemented on the abrasive waterjet polishing technique to evaluate its capability in polishing of surfaces and edges of hydraulic turbine blades. For this, the properties of this method are studied and the main parameters affecting its performance are determined. Then, an experimental test-rig is designed, manufactured and tested to be used in this study. This test-rig can be used to polish linear and planar areas on the surface of the desired workpieces. Considering the number of parameters and their levels, the Taguchi method is used to design the preliminary experiments. All experiments are then implemented according to the Taguchi L 18 orthogonal array. The signal-to-noise ratios obtained from the results of these experiments are used to determine the importance of the controlled polishing parameters on the final quality of the polished surface. The evaluations on these ratios reveal that the nozzle angle and the nozzle diameter have the most important impact on the results. The outcomes of these experiments can be used as a basis to design a more precise set of experiments in which the optimal values of each parameter can be estimated

  4. Overview Of Dry-Etch Techniques

    Science.gov (United States)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  5. Calculation and simulation on mid-spatial frequency error in continuous polishing

    International Nuclear Information System (INIS)

    Xie Lei; Zhang Yunfan; You Yunfeng; Ma Ping; Liu Yibin; Yan Dingyao

    2013-01-01

    Based on theoretical model of continuous polishing, the influence of processing parameters on the polishing result was discussed. Possible causes of mid-spatial frequency error in the process were analyzed. The simulation results demonstrated that the low spatial frequency error was mainly caused by large rotating ratio. The mid-spatial frequency error would decrease as the low spatial frequency error became lower. The regular groove shape was the primary reason of the mid-spatial frequency error. When irregular and fitful grooves were adopted, the mid-spatial frequency error could be lessened. Moreover, the workpiece swing could make the polishing process more uniform and reduce the mid-spatial frequency error caused by the fix-eccentric plane polishing. (authors)

  6. Physical chemistry of wet chemical anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1995-01-01

    In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

  7. Surface morphology changes of acrylic resins during finishing and polishing phases

    Directory of Open Access Journals (Sweden)

    Glaucio Serra

    2013-12-01

    Full Text Available INTRODUCTION: The finishing and polishing phases are essential to improve smoothness and shining on the surface of acrylic resins used to make removable orthodontic appliances. A good surface finishing reduces roughness, which facilitates hygiene, prevents staining and provides greater comfort to the patients. OBJECTIVE: The aim of this paper was to analyze the changes on surface morphology of acrylic resins during finishing and polishing phases. METHODS: Thirty discs (10 mm in diameter and 5 mm in length were made with acrylic resin and randomly divided into ten groups. The control group did not receive any treatment while the other groups received gradual finishing and polishing. The last group received the entire finishing and polishing procedures. Surface morphology was qualitatively analyzed through scanning electron microscopy and quantitatively analyzed through a laser profilometer test. RESULTS: The acrylic resin surfaces without treatment showed bubbles which were not observed in the subsequent phases. Wearing out with multilaminated burs, finishing with wood sandpaper and finishing with water sandpaper resulted in surfaces with decreasing irregularities. The surfaces that were polished with pumice and with low abrasive liquids showed high superficial smoothness. CONCLUSION: Highly smooth acrylic resin surfaces can be obtained after mechanical finishing and polishing performed with multilaminated burs, wood sandpaper, water sandpaper, pumice and low abrasive liquids.

  8. Change of wettability of PTFE surface by sputter etching and excimer laser. Sputter etching oyobi excimer laser ni yoru PTFE hyomen no shinsuika

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, S. (Nitto Denko Corp., Osaka (Japan)); Kubo, U. (Kinki University, Osaka (Japan))

    1994-06-20

    The wettability of PTFE (polytetrafluoroethylene) surfaces was improved by sputter etching and excimer laser irradiation. In sputter etching, the PTFE surface was treated by reactive sputter etching with H2O gas to give active groups on the surface. In laser irradiation, the surface was irradiated in pure water by high-energy KrF excimer laser. As the surface wettability was evaluated with a contact angle to water, the contact angle decreased remarkably in both treatments resulting in a good improvement effect. In sputter etching, various new chemical bonds such as F-C=O, F2C-FC-O, F2C-C-O and C-O were observed because of a decrease in F and incorporation of oxygen. Such chemical bonds could be eliminated by ultraviolet ray irradiation, and the treated surface condition approached the initial condition after irradiation of 200 hours. In laser irradiation, it was suggested that C-F bonds were broken, and OH groups were added to the surface by dissociation of H2O to H and OH. 7 refs., 8 figs., 1 tab.

  9. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    Directory of Open Access Journals (Sweden)

    Costescu Ruxandra

    2009-01-01

    Full Text Available Abstract The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  10. Correlation of microstructure and fatigue crack growth resistance in Ti-6Al-4V alloy

    CSIR Research Space (South Africa)

    Masete, Stephen

    2016-10-01

    Full Text Available Opal 450 mounting press. The specimens were ground and polished using an ATM Saphir 550 polisher and were thereafter cleaned in the ultrasonic bath using ethanol for about 10 minutes and then air dried. Etching was done using Kroll’s reagent (1 ml HF...

  11. Some aspects of the etching behavior of cellulose nitrate as track detector

    International Nuclear Information System (INIS)

    Hildebrand, D.; Reitz, G.; Buecker, H.

    1976-01-01

    Experimental results are presented to support the hypothesis that the etching velocity in cellulose nitrate detectors is dependent on the local water content of the foil. The consequence is drawn that high concentrations (> 4.7 n) of the etching solution should not be used for high precision track etching. The possibility to vary the Vsub(t)/Vsub(b) ratio is reported to have a useful application in biological experiments. Further more an influence of etch products at low NaOH concentrations was found. The cellulose nitrate detectors used in this investigation are 250 μ sheets made by Daicel, Nippon (plasticized) and 100 μ sheets made by Kodak, France (Type CA 80-15, plasticized). No qualitative differences in the etching behaviour of these two materials were obtained regarding the reported investigations, although the differences are partly large regarding other features. (orig.) [de

  12. Poly(A-Specific Ribonuclease Mediates 3′-End Trimming of Argonaute2-Cleaved Precursor MicroRNAs

    Directory of Open Access Journals (Sweden)

    Mayuko Yoda

    2013-11-01

    Full Text Available MicroRNAs (miRNAs are typically generated as ∼22-nucleotide double-stranded RNAs via the processing of precursor hairpins by the ribonuclease III enzyme Dicer, after which they are loaded into Argonaute (Ago proteins to form an RNA-induced silencing complex (RISC. However, the biogenesis of miR-451, an erythropoietic miRNA conserved in vertebrates, occurs independently of Dicer and instead requires cleavage of the 3′ arm of the pre-miR-451 precursor hairpin by Ago2. The 3′ end of the Ago2-cleaved pre-miR-451 intermediate is then trimmed to the mature length by an unknown nuclease. Here, using a classical chromatographic approach, we identified poly(A-specific ribonuclease (PARN as the enzyme responsible for the 3′–5′ exonucleolytic trimming of Ago2-cleaved pre-miR-451. Surprisingly, our data show that trimming of Ago2-cleaved precursor miRNAs is not essential for target silencing, indicating that RISC is functional with miRNAs longer than the mature length. Our findings define the maturation step in the miRNA biogenesis pathway that depends on Ago2-mediated cleavage.

  13. Effect of ferric sulfate contamination on the bonding effectiveness of etch-and-rinse and self-etch adhesives to superficial dentin

    OpenAIRE

    Shahram Farzin Ebrahimi; Niloofar Shadman; Arezoo Abrishami

    2013-01-01

    Aim: This study investigated the effect of one hemostatic agent on the shear bond strength of self-etch and etch-and-rinse adhesive systems. Materials and Methods: Sixty extracted third molars were selected. After preparing a flat surface of superficial dentin, they were randomly divided into six groups. Adhesives were Tetric N-Bond, AdheSE, and AdheSE One F. Before applying adhesives, surfaces were contaminated with ViscoStat for 60 s in three groups and rinsed. Then composite were attached ...

  14. Implementation of the Bulgarian-Polish online dictionary

    Directory of Open Access Journals (Sweden)

    Ludmila Dimitrova

    2015-11-01

    Full Text Available Implementation of the Bulgarian-Polish online dictionary The paper describes the implementation of an online Bulgarian-Polish dictionary as a technological tool for applications in digital humanities. This bilingual digital dictionary is developed in the frame of the joint research project “Semantics and Contrastive Linguistics with a focus on a bilingual electronic dictionary” between IMI-BAS and ISS-PAS, supervised by L. Dimitrova (IMI-BAS and V. Koseska-Toszewa (ISS-PAS. In addition, the main software tools for web-presentation of the dictionary are described briefly.

  15. Laser etching of polymer masked leadframes

    Science.gov (United States)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  16. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  17. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  18. Lay beliefs on Polish oncology in the evaluation of healthy individuals.

    Science.gov (United States)

    Synowiec-Piłat, Małgorzata

    2017-12-23

    Poland is among the countries which reported the highest rates of mortality from cancer. The health behaviours of people are influenced, among other things, by their beliefs about cancer, but their evaluation of oncological institutions and specialists seems also to be of great importance. Objectives. 1. How the respondents evaluate Polish oncology: a) the conditions of treatment in oncology hospitals, b) access to oncological medical services, c) the competence of oncologists. 2. What are the socio-cultural factors of the assessment of Polish oncology? 3. What is the influence of the grade level of the assessment of Polish oncology on the degree of fear and the knowledge about cancer? The study was carried out with a sample of 910 adult residents of Wroclaw in south-west Poland. Quota sampling was used. An interview questionnaire was used as the method. Analysis of the data showed a negative image of Polish oncology, according to the study participants: dissatisfaction with both treatment conditions and with access to medical services. Assessment of Polish oncology depends primarily on education, age and economic situation, as well as 'family history of cancer', and attitude towards doctors. The lower the rating of Polish oncology, the lower the medical knowledge, and the higher the level of fear of cancer. Negative assessment of Polish oncology perpetuates the fear of cancer in society. There is a need for constant improvement of the quality of medical oncology services, for building public trust in physicians, to fight inequalities in health, and to take into account the lay perspectives in developing strategies to combat cancer.

  19. The Profile of a Polish Mutual Fund Manager

    Directory of Open Access Journals (Sweden)

    Dariusz Filip

    2018-05-01

    Full Text Available Aim/purpose - The purpose of this paper is to identify the characteristics that are typical of mutual fund managers. Design/methodology/approach - The study concentrates on a set of socio-demographic data, such as: age, gender, education, experience, and professional qualifications of 336 portfolio managers. The applied research strategy relies on an analysis concerning a set of statistical metrics describing the population under examination. Findings - The average Polish fund manager is a 37-year-old man, a holder of a stock-broker or investment adviser license. He obtained the authorization from the Polish Financial Supervision Authority (KNF a few years after graduating from the Warsaw School of Economics (SGH. He has 11 years' experience in financial markets and 7 years' experience in the mutual fund industry. Research implications/limitations - The identification of managerial characteristics for the purpose of creating a profile of a Polish mutual fund manager will provide an important basis for further surveys and analyses aimed to evaluate the effectiveness of mutual funds. Originality/value/contribution - There are no investigations within the discussed area in Polish studies. Therefore, the identification of the characteristics that are typical of mutual fund managers will make a contribution to the finance literature.(original abstract

  20. Comparison of two test designs for evaluating the shear bond strength of resin composite cements.

    Science.gov (United States)

    Hu, M; Weiger, R; Fischer, J

    2016-02-01

    To compare a shear bond strength test for resin composite cements developed in order to better consider the shrinkage stress (here termed "Swiss shear test") with the shear test design according to ISO 29022. Four restorative materials (VITA Enamic (VE), VITA Suprinity (VS), Vitablocs Mark II (VM) and VITA YZ T (YZ)) served as substrate. VE, VS and VM were polished or etched. YZ was polished, sandblasted or etched. Specimens were either bonded according to the Swiss or the ISO shear test. RelyX Unicem 2 Automix, Maxcem Elite and PermaFlo DC were used as cements. Shear bond strength (SBS) was measured. Failure modes (adhesive, cohesive or mixed) were evaluated by means of SEM. Mean SBS values obtained with the Swiss shear test were significantly lower than those obtained with the ISO shear test. VE and VM exhibited similar SBS, values of VS were significantly higher. On etched surfaces VM and VE exhibited primarily cohesive failures, VS primarily adhesive failures. On polished substrates significantly lower bond strength values and exclusively adhesive failures were observed. YZ exhibited solely adhesive failures. Compared to polished YZ, SBS significantly increased after sandblasting and even more after etching. Only for adhesively failed specimens mean SBS values of Swiss and ISO shear test were strongly correlated. Both test designs showed the same ranking of test results. When adhesive failure occurred test results were strongly correlated. When cohesive failure was involved, both test designs did not provide reliable results. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.